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Sample records for resistance temperature detector

  1. Advanced surveillance of Resistance Temperature Detectors in Nuclear Power Plants

    International Nuclear Information System (INIS)

    Montalvo, C.; García-Berrocal, A.; Bermejo, J.A.; Queral, C.

    2014-01-01

    Highlights: • A two time constant transfer function is proposed to describe the Resistance Temperature Detector dynamics. • One constant is only related to the inner dynamics whereas the other one is related to the process and to the inner dynamics. • The two time constants have been found in several RTDs from a Nuclear Power Plant. • A Monte Carlo simulation is used to properly adjust the sampling time to find both constants. - Abstract: The dynamic response of several RTDs located at the cold leg of a PWR has been studied. A theoretical model for the heat transfer between the RTDs and the surrounding fluid is derived. It proposes a two real poles transfer function. By means of noise analysis techniques in the time domain (autoregressive models) and the Dynamic Data System methodology, the two time constants of the system can be found. A Monte Carlo simulation is performed in order to choose the proper sampling time to obtain both constants. The two poles are found and they permit an advance in situ surveillance of the sensor response time and the sensor dynamics performance. One of the poles is related to the inner dynamics whereas the other one is linked to the process and the inner dynamics. So surveillance on the process and on the inner dynamics can be distinguished

  2. Phase-insensitive detectors for ac resistance bridges with application to temperature control systems

    International Nuclear Information System (INIS)

    Duncan, M.G.

    1977-01-01

    A method of detecting AC resistance bridge error signals with low sensitivity to stray reactances is presented. The detector, which compares magnitudes of two bridge signals, can be used in a fast resistance temperature control to maintain constant resistance to better than 2 ppM at resistances down to 5 milliohms

  3. Review of resistance temperature detector time response characteristics. Safety evaluation report

    International Nuclear Information System (INIS)

    1981-08-01

    A Resistance Temperature Detector (RTD) is used extensively for monitoring water temperatures in nuclear reactor plants. The RTD element does not respond instantaneously to changes in water temperature, but rather there is a time delay before the element senses the temperature change, and in nuclear reactors this delay must be factored into the computation of safety setpoints. For this reason it is necessary to have an accurate description of the RTD time response. This report is a review of the current state of the art of describing and measuring this time response

  4. Self-heating, gamma heating and heat loss effects on resistance temperature detector (RTD) accuracy

    International Nuclear Information System (INIS)

    Qian, T.; Hinds, H.W.; Tonner, P.

    1997-01-01

    Resistance temperature detectors (RTDs) are extensively used in CANDU nuclear power stations for measuring various process and equipment temperatures. Accuracy of measurement is an important performance parameter of RTDs and has great impact on the thermal power efficiency and safety of the plant. There are a number of factors that contribute to some extent to RTD measurement error. Self-heating, gamma heating and the heat-loss throughout conduction of the thermowell are three of these factors. The degree to which these three affect accuracy of RTDs used for the measurement of reactor inlet header temperature (RIHT) has been analyzed and is presented in this paper. (author)

  5. Eigendecomposition model of resistance temperature detector with applications to S-CO{sub 2} cycle sensing

    Energy Technology Data Exchange (ETDEWEB)

    Heifetz, Alexander, E-mail: aheifetz@anl.gov; Vilim, Richard

    2017-01-15

    Highlights: • Developed eigendecomposition model of resistance temperature detector (RTD) in a fluid. • Showed that RTD time constant primarily depends on the rate of heat transfer from the fluid to the outer wall of RTD. • Showed that RTD time constant can be calculated as the sum of reciprocal eigenvalues of the heat transfer matrix. • Calculated time constant of thermowell-mounted RTD sensor at the hot side of the precooler in the S-CO{sub 2} cycle. - Abstract: Super-critical carbon dioxide (S-CO{sub 2}) is a promising thermodynamic cycle for advanced nuclear reactors and solar energy conversion applications. Dynamic control of the proposed recompression S-CO{sub 2} cycle is accomplished with input from resistance temperature detector (RTD) measurements of the process fluid. One of the challenges in practical implementation of S-CO{sub 2} cycle is high corrosion rate of component and sensor materials. In this paper, we develop a mathematical model of RTD sensing using eigendecomposition model of radial heat transfer in a layered long cylinder. We show that the value of RTD time constant primarily depends on the rate of heat transfer from the fluid to the outer wall of RTD. We also show that for typical material properties, RTD time constant can be calculated as the sum of reciprocal eigenvalues of the heat transfer matrix. Using the computational model and a set of RTD and CO{sub 2} fluid thermo-physical parameter values, we calculate the value of time constant of thermowell-mounted RTD sensor at the hot side of the precooler in the S-CO{sub 2} cycle. The eigendecomposition model of RTD will be used in future studies to model sensor degradation and its impact on control of S-CO{sub 2}.

  6. Precision rectifier detectors for ac resistance bridge measurements with application to temperature control systems for irradiation creep experiments

    Energy Technology Data Exchange (ETDEWEB)

    Duncan, M. G.

    1977-05-01

    The suitability of several temperature measurement schemes for an irradiation creep experiment is examined. It is found that the specimen resistance can be used to measure and control the sample temperature if compensated for resistance drift due to radiation and annealing effects. A modified Kelvin bridge is presented that allows compensation for resistance drift by periodically checking the sample resistance at a controlled ambient temperature. A new phase-insensitive method for detecting the bridge error signals is presented. The phase-insensitive detector is formed by averaging the magnitude of two bridge voltages. Although this method is substantially less sensitive to stray reactances in the bridge than conventional phase-sensitive detectors, it is sensitive to gain stability and linearity of the rectifier circuits. Accuracy limitations of rectifier circuits are examined both theoretically and experimentally in great detail. Both hand analyses and computer simulations of rectifier errors are presented. Finally, the design of a temperature control system based on sample resistance measurement is presented. The prototype is shown to control a 316 stainless steel sample to within a 0.15/sup 0/C short term (10 sec) and a 0.03/sup 0/C long term (10 min) standard deviation at temperatures between 150 and 700/sup 0/C. The phase-insensitive detector typically contributes less than 10 ppM peak resistance measurement error (0.04/sup 0/C at 700/sup 0/C for 316 stainless steel or 0.005/sup 0/C at 150/sup 0/C for zirconium).

  7. Trapping induced Neff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors

    International Nuclear Information System (INIS)

    Eremin, V.; Li, Z.; Iljashenko, I.

    1994-02-01

    The trapping of both non-equilibrium electrons and holes by neutron induced deep levels in high resistivity silicon planar detectors have been observed. In the experiments Transient Current and Charge Techniques, with short laser light pulse excitation have been applied at temperature ranges of 77--300 k. Light pulse illumination of the front (p + ) and back (n + ) contacts of the detectors showed effective trapping and detrapping, especially for electrons. At temperatures lower than 150 k, the detrapping becomes non-efficient, and the additional negative charge of trapped electrons in the space charge region (SCR) of the detectors leads to dramatic transformations of the electric field due to the distortion of the effective space charge concentration N eff . The current and charge pulses transformation data can be explained in terms of extraction of electric field to the central part of the detector from the regions near both contacts. The initial field distribution may be recovered immediately by dropping reverse bias, which injects both electrons and holes into the space charge region. In the paper, the degree of the N eff distortions among various detectors irradiated by different neutron fluences are compared

  8. High Temperature Superconductor Resonator Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — High Temperature Superconductor (HTS) infrared detectors were studied for years but never matured sufficiently for infusion into instruments. Several recent...

  9. Science with low temperature detectors

    International Nuclear Information System (INIS)

    Sadoulet, B.; Lawrence Berkeley National Lab., CA; California Univ., Berkeley

    1996-01-01

    The novel technique of particle detection with low temperature detectors opens a number of new scientific opportunities. We review some of these, focusing on three generic applications: far infrared bolometry taking as an example the cosmic microwave background, X-ray spectroscopy for astrophysics and biological applications, and massive calorimeters for dark matter searches and neutrino physics. (orig.)

  10. Water level sensor and temperature profile detector

    International Nuclear Information System (INIS)

    Tokarz, R.D.

    1983-01-01

    A temperature profile detector comprising a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material is electrically connected to the interior electrical conductor and positioned within the length of metal tubing. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows

  11. Water level sensor and temperature profile detector

    Science.gov (United States)

    Tokarz, Richard D.

    1983-01-01

    A temperature profile detector comprising a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material is electrically connected to the interior electrical conductor and positioned within the length of metal tubing. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows.

  12. Short course on the temperature detector system

    International Nuclear Information System (INIS)

    Anderson, R.

    1977-09-01

    In the SLAC linac, a slow temperature rise may occur from the continuous scraping of the beam on the vacuum chamber wall. In places where this is likely to occur, surface temperature sensors are mounted on the outside of the vacuum chambers and are arranged to trip the beam if the temperature exceeds a preset level. In addition to vacuum chamber surface temperature measurements, water temperature measurements are made on the cooling water supply and return line of slits, collimators, water-cooled vacuum chambers, and dumps. In areas where the radiation levels are very high and where measurements have to be made in the radioactive cooling water lines, a stainless steel thermal well is welded into the pipe at each measuring location and a radiation-resistant immersion sensor is screwed into the well. Where the environment is less severe, similar but slightly less expensive sensors are used as direct immersion devices with no thermal wells. A discussion is given of: (1) temperature sensors; (2) temperature detector card types; (3) digital temperature readout; (4) detector card calibration; (5) line resistance equalization; and (6) operational and maintenance problems

  13. Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

    International Nuclear Information System (INIS)

    Gessner, T.; Irmer, K.

    1983-01-01

    A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

  14. Temperature distribution model for the semiconductor dew point detector

    Science.gov (United States)

    Weremczuk, Jerzy; Gniazdowski, Z.; Jachowicz, Ryszard; Lysko, Jan M.

    2001-08-01

    The simulation results of temperature distribution in the new type silicon dew point detector are presented in this paper. Calculations were done with use of the SMACEF simulation program. Fabricated structures, apart from the impedance detector used to the dew point detection, contained the resistive four terminal thermometer and two heaters. Two detector structures, the first one located on the silicon membrane and the second one placed on the bulk materials were compared in this paper.

  15. Radiation damage resistance in mercuric iodide X-ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Patt, B E; Dolin, R C; Devore, T M; Markakis, J M [EG and G Energy Measurements, Inc., Goleta, CA (USA); Iwanczyk, J S; Dorri, N [Xsirius, Inc., Marina del Rey, CA (USA); Trombka, J [National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center

    1990-12-20

    Mercuric iodide (HgI{sub 2}) radiation detectors show great potential as ambient-temperature solid-state detectors for X-rays, gamma rays and visible light, with parameters that are competitive with existing technologies. In a previous experiment, HgI{sub 2} detectors irradiated with 10 MeV protons/cm{sup 2} exhibited no damage. The 10 MeV protons represent only the low range of the spectrum of energies that are important. An experiment has been conducted at the Saturne accelerator facility at Saclay, France, to determine the susceptibility of these detectors to radiation damage by high-energy (1.5 GeV) protons. The detectors were irradiated to a fluence of 10{sup 8} protons/cm{sup 2}. This fluence is equivalent to the cosmic radiation expected in a one-year period in space. The resolution of the detectors was measured as a function of the integral dose. No degradation in the response of any of the detectors or spectrometers was seen. It is clear from this data that HgI{sub 2} has extremely high radiation-damage resistance, exceeding that of most other semiconductor materials used for radiation detectors. Based on the results shown to date, HgI{sub 2} detectors are suitable for applications in which they may be exposed to high integral dose levels. (orig.).

  16. Shock-resistant scintillation detector

    International Nuclear Information System (INIS)

    Novak, W.P.

    1979-01-01

    A unique scintillation detector unit is disclosed which employs a special light transfer and reflector means that encases and protects the scintillator crystal against high g forces. The light transfer means comprises a flexible silicon rubber optical material bonded between the crystal and the optical window and having an axial thickness sufficient to allow the scintillator to move axially inside the container under high g forces without destroying the bonds. The reflector means comprises a soft elastic silicone rubber sleeve having a multiplicity of closely arranged tapered protrusions radiating toward and engaging the periphery of the scintillator crystal to cushion shocks effectively and having a reflective material, such as aluminum oxide powder, in the spaces between the protrusions. The reflector means provides improved shock absorption because of the uniform support and cushioning action of the protrusions and also provides the detector with high efficiency. The silicon rubber composition is specially compounded to include a large amount of aluminum oxide which enables the rubber to function effectively as a light reflector

  17. Variation of microchannel plate resistance with temperature and applied voltage

    International Nuclear Information System (INIS)

    Pearson, J.F.; Fraser, G.W.; Whiteley, M.J.

    1987-01-01

    The resistance of microchannel plate electron multiplier is well known to be a function of both applied voltage and detector temperature. We show that the apparent variation of resistance with bias voltage is simply due to plate temperature increases resulting from resistive heating. (orig.)

  18. Photosensitive Gaseous Detectors for Cryogenic Temperature Applications

    CERN Document Server

    Periale, L; Iacobaeus, C; Lund-Jensen, B; Picchi, P; Pietropaolo, F

    2007-01-01

    There are several proposals and projects today for building LXe Time Projection Chambers (TPCs) for dark matter search. An important element of these TPCs are the photomultipliers operating either inside LXe or in vapors above the liquid. We have recently demonstrated that photosensitive gaseous detectors (wire type and hole-type) can operate perfectly well until temperatures of LN2. In this paper results of systematic studies of operation of the photosensitive version of these detectors (combined with reflective or semi-transparent CsI photocathodes) in the temperature interval of 300-150 K are presented. In particular, it was demonstrated that both sealed and flushed by a gas detectors could operate at a quite stable fashion in a year/time scale. Obtained results, in particular the long-term stability of photosensitive gaseous detectors, strongly indicate that they can be cheap and simple alternatives to photomultipliers or avalanche solid-state detectors in LXe TPC applications.

  19. Bell inequalities resistant to detector inefficiency

    International Nuclear Information System (INIS)

    Massar, Serge; Pironio, Stefano; Roland, Jeremie; Gisin, Bernard

    2002-01-01

    We derive both numerically and analytically Bell inequalities and quantum measurements that present enhanced resistance to detector inefficiency. In particular, we describe several Bell inequalities which appear to be optimal with respect to inefficient detectors for small dimensionality d=2,3,4 and two or more measurement settings at each side. We also generalize the family of Bell inequalities described by Collins et al. [Phys. Rev. Lett. 88, 040404 (2002)] to take into account the inefficiency of detectors. In addition, we consider the possibility for pairs of entangled particles to be produced with probability less than 1. We show that when the pair production probability is small, one should in general use different Bell inequalities than when the pair production probability is high

  20. Neutrinos, dark matter and low temperature detectors

    International Nuclear Information System (INIS)

    Gonzalez-Mestres, L.; Perret-Gallix, D.

    1988-01-01

    The present status of cryogenic detector developments for particle physics is discussed, with emphasis on applications at the cross-disciplinary frontier between particle physics and astrophysics, where low temperature devices appear to be particularly well suited. The overwiew of results is completed by a sketch of new ideas and possible ways for further improvements. Neutrino role importance is particularly shown

  1. Water-level sensor and temperature-profile detector

    Science.gov (United States)

    Not Available

    1981-01-29

    A temperature profile detector is described which comprises a surrounding length of metal tubing and an interior electrical conductor both constructed of high temperature high electrical resistance materials. A plurality of gas-filled expandable bellows made of electrically conductive material are positioned at spaced locations along a length of the conductors. The bellows are sealed and contain a predetermined volume of a gas designed to effect movement of the bellows from an open circuit condition to a closed circuit condition in response to monitored temperature changes sensed by each bellows.

  2. Resistive gaseous detectors designs, performance, and perspectives

    CERN Document Server

    Abbrescia, Marcello; Peskov, Vladimir

    2018-01-01

    This first book to critically summarize the latest achievements and emerging applications within this interdisciplinary topic focuses on one of the most important types of detectors for elementary particles and photons: resistive plate chambers (RPCs). In the first part, the outstanding, international team of authors comprehensively describes and presents the features and design of single and double-layer RPCs before covering more advanced multi-layer RPCs. The second part then focuses on the application of RPCs in high energy physics, materials science, medicine and security. Throughout, the experienced authors adopt a didactic approach, with each subject presented in a simple way, increasing in complexity step by step.

  3. Detector Physics of Resistive Plate Chambers

    CERN Document Server

    Lippmann, Christian; Riegler, W

    2003-01-01

    Resistive Plate Chambers (RPCs) are gaseous parallel plate avalanche detectors that implement electrodes made from a material with a high volume resistivity between 10^7 and 10^12 Ohm cm. Large area RPCs with 2mm single gaps operated in avalanche mode provide above 98% efficiency and a time resolution of around 1ns up to a flux of several kHz/cm2. These Trigger RPCs will, as an example, equip the muon detector system of the ATLAS experiment at CERN on an area of 3650m2 and with 355.000 independent read out channels. Timing RPCs with a gas gap of 0.2 to 0.3mm are widely used in multi gap configurations and provide 99% efficiency and time resolution down to 50ps. While their performance is comparable to existing scintillator-based Time-Of-Flight (TOF) technology, Timing RPCs feature a significantly, up to an order of magnitude, lower price per channel. They will for example equip the 176m2 TOF barrel of the ALICE experiment at CERN with 160.000 independent read out cells. RPCs were originally operated in stream...

  4. Study on temperature dependence of output voltage of electrochemical detector for environmental neutrinos

    International Nuclear Information System (INIS)

    Halim, Md Abdul; Ishibashi, Kenji; Arima, Hidehiko; Terao, Norichika

    2006-01-01

    An electrochemical detector with biological material has been applied for the detection of neutrinos on the basis of a new hypothesis. The detector consisted of two electrodes with raw silk and purified water, and gave an appreciable output voltage. The reproducibility of the experimental results was as good as 99.4% at temperature of 300 K. The temperature dependence of the voltage of the detector was studied at 280, 290, 300 and 310 K. Among them, the detector at 310 K produced the highest output voltage and reached 104 mV in 16 days, whereas that at 280 K generated the lowest voltage and it was as low as 1.2 mV in 16 days. The detectors working at 290 and 300 K produced the voltages 18 and 57 mV in 16 days, respectively. The output voltages of the detector increased with temperature and were in good agreement in spite of the history of temperature. The internal resistance and electromotive force (internal voltage) of the experimental detector were obtained at each temperature by individual analysis and least square fitting method. It was found that the electromotive force was almost constant for these temperatures while the internal resistance showed a large dependence on temperature. The reduction of the output voltage with temperature is dominated by this behavior of internal resistance. (author)

  5. Temperature detectors on irradiated silicon base

    International Nuclear Information System (INIS)

    Karimov, M.; Dzhalelov, M.A.; Kurbanov, A.O.

    2005-01-01

    It is well known, that the most suitable for thermal resistors production is compensated silicon with impurities forming deep lying in forbidden zone, having big negative resistance temperature coefficients (RTC). In the capacity of initial materials for thermal resistors with negative RTC the n-type monocrystalline silicon with specific resistance ∼30 Ω·cm at 300 K is applied. Before the irradiation the phosphorus diffusion is realizing at temperature ∼1000 deg. C for 10 min. Irradiation is putting into practise by WWR-SM reactor fast neutrons within the range (7-10)·10 13 cm -2 . The produced resistors have nominal resistance range (8-20)·10 3 Ω·cm, coefficient of the thermal sensitivity B=4000-6000 deg. C., RTC α 300K =4-6.6 %/grad. It is shown, that offered method allows to obtain same type resistors characteristics on the base of neutron-irradiated material

  6. A study on heat resistance of high temperature resistant coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu [Research Institute of Engineering Technology of CNPC, Tianjin (China)

    2005-04-15

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  7. A study on heat resistance of high temperature resistant coating

    International Nuclear Information System (INIS)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu

    2005-01-01

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  8. Development and first tests of GEM-like detectors with resistive electrodes

    CERN Document Server

    Peskov, Vladimir; Centro, Sandro; Di Mauro, A; Lund-Jensen, B; Martinengo, P; Nappi, E; Oliveira, R; Pietropaolo, F; Picchi, P; Periale, L; Rodionov, I; Ventura, Sandro

    2007-01-01

    We have developed and tested several prototypes of GEM-like detectors with electrodes coated with resistive layers or completely made of resistive materials. These detectors can operate stably at gains close to 105. The resistive layers limit the energy of discharges appearing at higher gains thus making the detectors very robust. We demonstrated that the cathodes of some of these detectors could be coated by CsI or SbCs layers to enhance the detection efficiency for the UV and visible photons. We also discovered that such detectors can operate stably in the cascade mode and high overall gains ($~10^{6}$) are reachable. Applications in several areas, for example in RICH or in noble liquid TPCs are therefore possible. The first results from the detection of UV photons at room and cryogenic temperatures will be given.

  9. A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Santocchia, A; Hall, G; MacEvoy, B; Moscatelli, F; Passeri, D; Pignatel, Giogrio Umberto

    2003-01-01

    The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10 degrees C). This, and more general current interest in the field of cryogenic operation, has led us to inve...

  10. Recent progress in low-temperature silicon detectors

    International Nuclear Information System (INIS)

    Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

    2003-01-01

    The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

  11. Development of innovative micro-pattern gaseous detectors with resistive electrodes and first results of their applications

    CERN Document Server

    Di Mauro, A; Martinengo, P; Nappi, E; Oliveira, R; Peskov, Vladimir; Periale, L; Picchi, P; Pietropaolo, F; Rodionov, I; Santiard, Jean-Claude

    2007-01-01

    The paper summarizes our latest progress in the development of newly introduced micro pattern gaseous detectors with resistive electrodes. These resistive electrodes protect the detector and the front-end electronics in case of occasional discharges and thus make the detectors very robust and reliable in operation. As an example, we describe in greater detail a new recently developed GEM-like detector, fully spark-protected with electrodes made of resistive kapton. We discovered that all resistive layers used in these studies (including kapton), that are coated with photosensitive layers, such as CsI, can be used as efficient photo cathodes for detectors operating in a pulse counting mode. We describe the first applications of such detectors combined with CsI or SbCs photo cathodes for the detection of UV photons at room and cryogenic temperatures.

  12. Temperature effects on radiation damage in plastic detectors

    International Nuclear Information System (INIS)

    Mendoza A, D.

    1996-01-01

    The objective of present work was to study the temperature effect on radiation damage registration in the structure of a Solid State Nuclear Track Detector of the type CR-39. In order to study the radiation damage as a function of irradiation temperature, sheets of CR-39 detectors were irradiated with electron beams, simulating the interaction of positive ions. CR-39 detectors were maintained at a constant temperature from room temperature up to 373 K during irradiation. Two techniques were used from analyzing changes in the detector structure: Electronic Paramagnetic Resonance (EPR) and Infrared Spectroscopy (IR). It was found by EPR analysis that the amount of free radicals decrease as irradiation temperature increases. The IR spectrums show yield of new functional group identified as an hydroxyl group (OH). A proposed model of interaction of radiation with CR-39 detectors is discussed. (Author)

  13. Resistive-strips micromegas detectors with two-dimensional readout

    Science.gov (United States)

    Byszewski, M.; Wotschack, J.

    2012-02-01

    Micromegas detectors show very good performance for charged particle tracking in high rate environments as for example at the LHC. It is shown that two coordinates can be extracted from a single gas gap in these detectors. Several micromegas chambers with spark protection by resistive strips and two-dimensional readout have been tested in the context of the R&D work for the ATLAS Muon System upgrade.

  14. A New GEM-like Imaging Detector with Electrodes Coated with Resistive Layers

    CERN Document Server

    Di Mauro, Antonio; Martinengo, Paolo; Napri, Eugenio; Peskov, Vladimir; Periale, Luciano; Picchi, P.; Pietropaolo, Francesco; Rodionov, I.

    We have developed and tested several prototypes of GEM-like detectors with electrodes coated with resistive layers: CuO or CrO. These detectors can operate stably at gains close to 10E5 and they are very robust. We discovered that the cathodes of these detectors could be coated by CsI layers and in such a way the detectors gain high efficiency for the UV photons. We also demonstrated that such detectors can operate stably in the cascade mode and high overall gains (~10E6) are reachable. This opens applications in several areas, for example in RICH or in noble liquid TPCs. Results from the first applications of these devices for UV photon detection at room and cryogenic temperatures are given.

  15. Reliability studies of high operating temperature MCT photoconductor detectors

    Science.gov (United States)

    Wang, Wei; Xu, Jintong; Zhang, Yan; Li, Xiangyang

    2010-10-01

    This paper concerns HgCdTe (MCT) infrared photoconductor detectors with high operating temperature. The near room temperature operation of detectors have advantages of light weight, less cost and convenient usage. Their performances are modest and they suffer from reliable problems. These detectors face with stability of the package, chip bonding area and passivation layers. It's important to evaluate and improve the reliability of such detectors. Defective detectors were studied with SEM(Scanning electron microscope) and microscopy. Statistically significant differences were observed between the influence of operating temperature and the influence of humidity. It was also found that humility has statistically significant influence upon the stability of the chip bonding and passivation layers, and the amount of humility isn't strongly correlated to the damage on the surface. Considering about the commonly found failures modes in detectors, special test structures were designed to improve the reliability of detectors. An accelerated life test was also implemented to estimate the lifetime of the high operating temperature MCT photoconductor detectors.

  16. Gas microstrip detectors on resistive plastic substrates

    International Nuclear Information System (INIS)

    Dixit, M.S.; Oakham, F.G.; Armitage, J.C.

    1993-01-01

    Plastics are desirable as substrates for gas microstrip detectors (GMDs) because of their flexibility, low density and long radiation length. GMDs have been fabricated on white Tedlar which has bulk electrical conductivity and ion-implanted Upilex which has a thin electrically conductive layer on the surface of an insulator. The effect of back plane voltage on the gain of such GMDs is investigated. Three 200 μm pitch, ion-implanted Upilex GMDs were recently tested in a high intensity beam at CERN. The anode signals were read out using fast, low noise, high gain amplifiers. Preliminary results of the test are presented

  17. One-cm-thick Si detector at LHe temperature

    Energy Technology Data Exchange (ETDEWEB)

    Braggio, C. [Dipartimento di Fisica, Universita di Ferrara, Via Saragat 1, 44100 Ferrara (Italy)], E-mail: braggio@pd.infn.it; Bressi, G. [INFN, Sez. di Pavia, Via Bassi 6, 27100 Pavia (Italy); Carugno, G. [INFN, Sez. di Padova, Via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [Laboratori Nazionali di Legnaro, Via dell' Universita 1, 35020 Legnaro (Italy); Serafin, A. [Dipartimento di Fisica, Universita di Padova, Via Marzolo 8, 35131 Padova (Italy)

    2007-10-11

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events.

  18. One-cm-thick Si detector at LHe temperature

    International Nuclear Information System (INIS)

    Braggio, C.; Bressi, G.; Carugno, G.; Galeazzi, G.; Serafin, A.

    2007-01-01

    A silicon p-i-n diode of thickness 1 cm has been studied experimentally at liquid helium temperature. This preliminary study is aimed at the construction of a much bigger detector to detect low energy neutrino events

  19. Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00389527; The ATLAS collaboration

    2016-01-01

    Resistive strip Micromegas detectors are discharge tolerant. They have been tested extensively as small detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100 kHz/cm$^2$ and above. Tracking resolution well below 100 $\\mu$m has been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3 m$^2$ in size. To investigate possible differences between small and large detectors, a 1 m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Measurement Facility (CRMF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. A segmentation of the resistive strip anode plane in 57.6 mm x 93 mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by eleven 93 mm broad trigger scintillators placed along the readout strips. This allows for mapping of homogeneity in pulse height and efficiency, d...

  20. Characterization of CdZnTe ambient temperature detectors

    International Nuclear Information System (INIS)

    Lavietes, A.

    1994-09-01

    A great deal of interest has been generated in the use of cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) detectors for ambient temperature detection of radionuclides. The addition of zinc to CdTe provides several benefits that enhance the materials operational characteristics at ambient temperature. Recent movement in the industry is to produce larger volume detectors using CdZnTe without much known about the effects of larger geometry on performance. The purpose of this study is to get an idea of the relationship of detector performance to both area and thickness variations

  1. Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Casagrande, L.; Barnett, B.M.; Bartalina, P.

    1999-01-01

    In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

  2. Shock-resistant gamma-ray detector tube

    International Nuclear Information System (INIS)

    1979-01-01

    A simple durable scintillation detector is described which, it is claimed, offers a solution to the shock resistance problems encountered when gamma detectors are used for deep bore hole well logging or in space vehicles. The shock resistant detector consists of an elongate sodium iodide scintillation crystal and rigid metal container with a round glass optical window at one end of the container and a metal end closure cap at the opposite end. An elastic rubber compression pad is provided between the end cap and the scintillation crystal to bias the crystal axially toward the glass window. An extension transparent silicone rubber light pipe of substantial axial thickness permanently couples the optical window to the crystal while allowing substantial movement under high g forces. (U.K.)

  3. Development of electron temperature measuring system by silicon drift detector

    International Nuclear Information System (INIS)

    Song Xianying; Yang Jinwei; Liao Min

    2007-12-01

    Soft X-ray spectroscopy with two channels Silicon Drift Detector (SDD) are adopted for electron temperature measuring on HL-2A tokamak in 2005. The working principle, design and first operation of the SDD soft X-ray spectroscopy are introduced. The measuring results of electron temperature are also presented. The results show that the SDD is very good detector for electron temperature measuring on HL-2A tokamak. These will become a solid basic work to establish SDD array for electron temperature profiling. (authors)

  4. The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

    Science.gov (United States)

    Eremin, V.; Shepelev, A.; Verbitskaya, E.; Zamantzas, C.; Galkin, A.

    2018-05-01

    The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity for the detector operation at the temperature of 1.9-10 K. The detectors from n-type silicon with the resistivity of 10, 4.5, and 0.5 kΩ cm were investigated at the temperature from 293 up to 7 K by the Transient Current Technique with a 660 nm pulse laser and alpha-particles. The shapes of the detector current pulse response allowed revealing a paradox in the properties of shallow donors of phosphorus, i.e., native dopants in the n-type Si. There was no carrier freeze-out on the phosphorus energy levels in the space charge region (SCR), and they remained positively charged irrespective of temperature, thus limiting the depleted region depth. As for the base region of a partially depleted detector, the levels became neutral at T < 28 K, which transformed silicon to an insulator. The reduction of the activation energy for carrier emission in the detector SCR estimated in the scope of the Poole-Frenkel effect failed to account for the impact of the electric field on the properties of phosphorus levels. The absence of carrier freeze-out in the SCR justifies the choice of high resistivity silicon as the only proper material for detector operation in a fully depleted mode at extremely low temperature.

  5. Automatic control and detector for three-terminal resistance measurement

    Science.gov (United States)

    Fasching, George E.

    1976-10-26

    A device is provided for automatic control and detection in a three-terminal resistance measuring instrument. The invention is useful for the rapid measurement of the resistivity of various bulk material with a three-terminal electrode system. The device maintains the current through the sample at a fixed level while measuring the voltage across the sample to detect the sample resistance. The three-electrode system contacts the bulk material and the current through the sample is held constant by means of a control circuit connected to a first of the three electrodes and works in conjunction with a feedback controlled amplifier to null the voltage between the first electrode and a second electrode connected to the controlled amplifier output. An A.C. oscillator provides a source of sinusoidal reference voltage of the frequency at which the measurement is to be executed. Synchronous reference pulses for synchronous detectors in the control circuit and an output detector circuit are provided by a synchronous pulse generator. The output of the controlled amplifier circuit is sampled by an output detector circuit to develop at an output terminal thereof a D.C. voltage which is proportional to the sample resistance R. The sample resistance is that segment of the sample between the area of the first electrode and the third electrode, which is connected to ground potential.

  6. Impulse method for temperature measurement of silicon detectors

    International Nuclear Information System (INIS)

    Kushpil, V.V.; Kushpil, S.A.; Petracek, V.

    1999-01-01

    A new impulse method of temperature measurement based on switching characteristic of the P-N junction is described. Temperature of silicon detector can be determined, due to the strong temperature dependence of minority carrier lifetime, from the charge registered during the switching-off process. The method has been tested in temperature range 25 - 60 deg C. Advantages, drawbacks and precision of this method are discussed

  7. Characterization and Calibration of Large Area Resistive Strip Micromegas Detectors

    CERN Document Server

    Losel, Philipp Jonathan; The ATLAS collaboration

    2015-01-01

    Resisitve strip Micromegas detectors behave discharge tolerant. They have been tested extensively as smaller detectors of about 10 x 10 cm$^2$ in size and they work reliably at high rates of 100\\,kHz/cm$^2$ and above. Tracking resolutions well below 100\\,$\\mu$m have been observed for 100 GeV muons and pions. Micromegas detectors are meanwhile proposed as large area muon precision trackers of 2-3\\,m$^2$ in size. To investigate possible differences between small and large detectors, a 1\\,m$^2$ detector with 2048 resistive strips at a pitch of 450 $\\mu$m was studied in the LMU Cosmic Ray Facility (CRF) using two 4 $\\times$ 2.2 m$^2$ large Monitored Drift Tube (MDT) chambers for cosmic muon reference tracking. Segmentation of the resistive strip anode plane in 57.6\\,mm x 95\\,mm large areas has been realized by the readout of 128 strips with one APV25 chip each and by 11 95\\,mm broad trigger scintillators placed along the readout strips.\\\\ This allows for mapping of homogenity in pulse height and efficiency, deter...

  8. High temperature resistant cermet and ceramic compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

  9. Characterization of Titanium films for low temperature detectors

    Science.gov (United States)

    Monticone, E.; Rajteri, M.; Rastello, M. L.; Lacquaniti, V.; Gandini, C.; Pasca, E.; Ventura, G.

    2002-02-01

    In this work we study Ti films, with thickness between 10 nm and 1000 nm, deposited by e-gun on silicon nitride. Critical temperatures and electrical resistivities of these films have been measured and related each other. The behavior of critical temperatures versus the residual resistivities is discussed in the frame of the Testardi and Mattheiss theory .

  10. Antibiotic resistance increases with local temperature

    Science.gov (United States)

    MacFadden, Derek R.; McGough, Sarah F.; Fisman, David; Santillana, Mauricio; Brownstein, John S.

    2018-06-01

    Bacteria that cause infections in humans can develop or acquire resistance to antibiotics commonly used against them1,2. Antimicrobial resistance (in bacteria and other microbes) causes significant morbidity worldwide, and some estimates indicate the attributable mortality could reach up to 10 million by 20502-4. Antibiotic resistance in bacteria is believed to develop largely under the selective pressure of antibiotic use; however, other factors may contribute to population level increases in antibiotic resistance1,2. We explored the role of climate (temperature) and additional factors on the distribution of antibiotic resistance across the United States, and here we show that increasing local temperature as well as population density are associated with increasing antibiotic resistance (percent resistant) in common pathogens. We found that an increase in temperature of 10 °C across regions was associated with an increases in antibiotic resistance of 4.2%, 2.2%, and 2.7% for the common pathogens Escherichia coli, Klebsiella pneumoniae and Staphylococcus aureus. The associations between temperature and antibiotic resistance in this ecological study are consistent across most classes of antibiotics and pathogens and may be strengthening over time. These findings suggest that current forecasts of the burden of antibiotic resistance could be significant underestimates in the face of a growing population and climate change4.

  11. Fabrication of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1988-06-01

    A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

  12. Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

    CERN Document Server

    MacEvoy, B; Hall, G; Moscatelli, F; Passeri, D; Santocchia, A

    2002-01-01

    Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase in the bias required to deplete the detector and hence achieve efficient charge collection. We have previously presented a model of interdefect charge exchange between closely spaced centers in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall (SRH) mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. There is currently much interest in the subject of cryogenic detector operation as a means of improving radiation hardness. Our motivation, however, is primarily to investigate our model further by testing its predictions over a range of temperatures. We present measurements of spectra from /sup 241/Am alpha par...

  13. The resistive plate WELL detector as a single stage thick gaseous multiplier detector

    Energy Technology Data Exchange (ETDEWEB)

    Bressler, Shikma; Breskin, Amos; Moleri, Luca; Kumar, Ashwini; Pitt, Michael [Department of Particle Physics and Astrophysics, Weizmann Institute of Science (WIS) (Israel); Kudella, Simon [Institut fuer Experimentelle Kernphysik (IEKP), KIT (Germany)

    2015-07-01

    Gaseous Electron Multiplier (GEM) detector use high electric fields inside the h ole of a foil to achieve a high charge multiplication. As a thicker version of G EMs based on printed circuit board (PCB) structures, Thick Gaseous Electron Multiplier (THGEM) detectors combine the high gain of a GEM foil with the robustness, stability and low production costs of a PCB and allow a large quantity of applications that require the coverage of a large area at low cost and moderate spatial resolution. One application the Weizmann Institute of Science (WIS) develops as a member of the RD51 framework is the Resistive Plate WELL (RPWELL) detector. This single stage detector allows a very stable, discharge free operation at high gain (10{sup 5}). The single stage operation allows a low total height and make s the RPWELL a candidate for the Digital Hadronic Calorimeter (DHCAL) of the International Large Detector (ILD) at the International Linear Collider (ILC). The talk gives an insight into the way the RPWELL works and shows results from the last test beam.

  14. High temperature oxidation resistant cermet compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1976-01-01

    Cermet compositions are designed to provide high temperature resistant refractory coatings on stainless steel or molybdenum substrates. A ceramic mixture of chromium oxide and aluminum oxide form a coating of chromium oxide as an oxidation barrier around the metal particles, to provide oxidation resistance for the metal particles.

  15. Calorimetric low temperature detectors for heavy ion physics

    Energy Technology Data Exchange (ETDEWEB)

    Egelhof, P.; Kraft-Bermuth, S. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany)]|[Mainz Univ. (Germany). Inst. fuer Physik

    2005-05-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ({sup 4}He.. {sup 238}U). Excellent results with respect to energy resolution, {delta}E/E ranging from 1 to 5 x 10{sup -3} even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of {sup 236}U by one order of magnitude and to determine the up to date smallest isotope ratio of {sup 236}U/{sup 238}U = 6.1 x 10{sup -12} in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also

  16. Calorimetric low temperature detectors for heavy ion physics

    International Nuclear Information System (INIS)

    Egelhof, P.; Kraft-Bermuth, S.; Mainz Univ.

    2005-07-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics at present and at the next generation heavy ion facilities is given with a special emphasis on the conditions for heavy ion detection and the potential advantage of cryogenic detectors for applications in heavy ion physics. Two types of calorimetric low temperature detectors for the detection of energetic heavy ions have been developed and their response to the impact of heavy ions was investigated systematically for a wide range of energies (E=0.1-360 MeV/amu) and ion species ( 4 He.. 238 U). Excellent results with respect to energy resolution, ΔE/E ranging from 1 to 5 x 10 -3 even for the heaviest ions, and other basic detector properties such as energy linearity with no indication of a pulse height defect, energy threshold, detection efficiency and radiation hardness have been obtained, representing a considerable improvement as compared to conventional heavy ion detectors based on ionization. With the achieved performance, calorimetric low temperature detectors bear a large potential for applications in various fields of basic and applied heavy ion research. A brief overview of a few prominent examples, such as high resolution nuclear spectroscopy, high resolution nuclear mass determination, which may be favourably used for identification of superheavy elements or in direct reaction experiments with radioactive beams, as well as background discrimination in accelerator mass spectrometry, is given, and first results are presented. For instance, the use of cryogenic detectors allowed to improve the sensitivity in trace analysis of 236 U by one order of magnitude and to determine the up to date smallest isotope ratio of 236 U/ 238 U = 6.1 x 10 -12 in a sample of natural uranium. Besides the detection of heavy ions, the concept of cryogenic detectors also provides considerable advantage for X

  17. Digital readouts for large microwave low-temperature detector arrays

    International Nuclear Information System (INIS)

    Mazin, Benjamin A.; Day, Peter K.; Irwin, Kent D.; Reintsema, Carl D.; Zmuidzinas, Jonas

    2006-01-01

    Over the last several years many different types of low-temperature detectors (LTDs) have been developed that use a microwave resonant circuit as part of their readout. These devices include microwave kinetic inductance detectors (MKID), microwave SQUID readouts for transition edge sensors (TES), and NIS bolometers. Current readout techniques for these devices use analog frequency synthesizers and IQ mixers. While these components are available as microwave integrated circuits, one set is required for each resonator. We are exploring a new readout technique for this class of detectors based on a commercial-off-the-shelf technology called software defined radio (SDR). In this method a fast digital to analog (D/A) converter creates as many tones as desired in the available bandwidth. Our prototype system employs a 100MS/s 16-bit D/A to generate an arbitrary number of tones in 50MHz of bandwidth. This signal is then mixed up to the desired detector resonant frequency (∼10GHz), sent through the detector, then mixed back down to baseband. The baseband signal is then digitized with a series of fast analog to digital converters (80MS/s, 14-bit). Next, a numerical mixer in a dedicated integrated circuit or FPGA mixes the resonant frequency of a specified detector to 0Hz, and sends the complex detector output over a computer bus for processing and storage. In this paper we will report on our results in using a prototype system to readout a MKID array, including system noise performance, X-ray pulse response, and cross-talk measurements. We will also discuss how this technique can be scaled to read out many thousands of detectors

  18. Creep resistant high temperature martensitic steel

    Energy Technology Data Exchange (ETDEWEB)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2017-01-31

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, copper, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  19. Creep resistant high temperature martensitic steel

    Science.gov (United States)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2015-11-13

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6 carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  20. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  1. Performance of μ-RWELL detector vs resistivity of the resistive stage

    Science.gov (United States)

    Bencivenni, G.; De Oliveira, R.; Felici, G.; Gatta, M.; Morello, G.; Ochi, A.; Lener, M. Poli; Tskhadadze, E.

    2018-04-01

    The μ-RWELL is a compact spark-protected single amplification stage Micro-Pattern-Gaseous-Detector (MPGD). The detector amplification stage is realized with a polyimide structure, micro-patterned with a dense matrix of blind-holes, integrated into the readout structure. The anode is formed by a thin Diamond Like Carbon (DLC) resistive layer separated by an insulating glue layer from the readout strips. The introduction of the resistive layer strongly suppressing the transition from streamer to spark gives the possibility to achieve large gains (> 104), without significantly affecting the capability to be efficiently operated in high particle fluxes. In this work we present the results of a systematic study of the μ-RWELL performance as a function of the DLC resistivity. The tests have been performed either with collimated 5.9 keV X-rays or with pion and muon beams at the SPS Secondary Beamline H4 and H8 at CERN.

  2. Resistivity measurements on the neutron irradiated detector grade silicon materials

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng

    1993-11-01

    Resistivity measurements under the condition of no or low electrical field (electrical neutral bulk or ENB condition) have been made on various device configurations on detector grade silicon materials after neutron irradiation. Results of the measurements have shown that the ENB resistivity increases with neutron fluence ({Phi}{sub n}) at low {phi}{sub n} (<10{sup 13} n/cm{sup 2}) and saturates at a value between 300 and 400 k{Omega}-cm at {phi}{sub n} {approximately}10{sup 13} n/cm{sup 2}. Meanwhile, the effective doping concentration N{sub eff} in the space charge region (SCR) obtained from the C-V measurements of fully depleted p{sup +}/n silicon junction detectors has been found to increase nearly linearly with {phi}{sub n} at high fluences ({phi}{sub n} > 10{sup 13} n/cm{sup 2}). The experimental results are explained by the deep levels crossing the Fermi level in the SCR and near perfect compensation in the ENB by all deep levels, resulting in N{sub eff} (SCR) {ne} n or p (free carrier concentrations in the ENB).

  3. Temperature effects on interaction of positive ions with plastic detectors

    International Nuclear Information System (INIS)

    Mendoza Anaya, D.

    1992-01-01

    The range of heavy charged particles in matter is dependent mainly on two groups of parameters, one related to the particle characteristics (charge z, mass m, energy E) and the other characterized by the stopping medium (charge z, density ρ). Those two groups are enough to describe the particle energy lost, which is related to the residual range. Research on charge particles registration using solid state nuclear track detectors (SSNTD), probe that environmental parameters affect the stabilization and formation of the tracks. One of those, is the temperature detector which shows an important effect during the irradiation on the characteristics of the tracks produced. In order to study the dependence of track geometry as a function of irradiation temperature, some SSNTD (CR 39 type) were irradiated with α particles and fission fragments. Results of this work show the existence of irradiation temperature effect on the track geometry. It is observed a reduction of length and diameters, as temperature increases. For low irradiation temperatures, there is a reduction of the track geometry, as compared with environmental temperature. (Author)

  4. Remote calibration of Resistance Temperature Devices (RTDs): Final report

    International Nuclear Information System (INIS)

    Blalock, T.V.; Roberts, M.J.

    1988-02-01

    Johnson noise power measuring techniques have been used to calibrate platinum resistance temperature detectors (RTDs) installed in an operating nuclear plant - Connecticut Yankee Atomic Power Company's Haddam Neck Nuclear Plant - achieving agreement with the dc calibration from better than 0.1% to as much as 1% (0.54 to 9.7 0 F) at the normal operating temperature of 585 0 F. Tests were also conducted at plant shutdown conditions. In this application, RTDs with an ice point resistance of 200 Ω were connected with four-wire extension cables approximately 100-ft long to a test station in containment. Methods were developed for in situ characterization of the extension cables and for quantitative measurement of and correction for nonthermal induced noise. Analysis of dc calibration methods showed that resistance-temperature tables used with industrial PRTs may be in error by 0.2 0 F or 0.02% A (expressed as a percentage of absolute temperature in either Kelvin or degrees Rankine) at 540 0 F. Recalibration of the RTDs measured in the plant tests showed differences of about 2.5 0 F or 0.2% A at 540 0 F from calibration tables used in the plant

  5. Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

    CERN Document Server

    Da Vià, C; Berglund, P; Borchi, E; Borer, K; Bruzzi, Mara; Buontempo, S; Casagrande, L; Chapuy, S; Cindro, V; Dimcovski, Zlatomir; D'Ambrosio, N; de Boer, Wim; Dezillie, B; Esposito, A P; Granat, V; Grigoriev, E; Heijne, Erik H M; Heising, S; Janos, S; Koivuniemi, J H; Konotov, I; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; Pagano, S; Palmieri, V G; Paul, S; Pirollo, S; Pretzl, Klaus P; Ropotar, I; Ruggiero, G; Salmi, J; Seppä, H; Suni, I; Smith, K; Sonderegger, P; Valtonen, M J; Zavrtanik, M

    1998-01-01

    The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2*10/sup 15/ n/cm/sup 2/, was measured at different cryogenic temperatures and different bias voltages. In order to $9 study reverse annealing (RA) effects, a few samples were heated to 80 degrees C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and $9 NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55and 65 0.000000or the RA and NRA sample respectively. Similar CCE $9 was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

  6. Development of decay energy spectroscopy using low temperature detectors.

    Science.gov (United States)

    Jang, Y S; Kim, G B; Kim, K J; Kim, M S; Lee, H J; Lee, J S; Lee, K B; Lee, M K; Lee, S J; Ri, H C; Yoon, W S; Yuryev, Y N; Kim, Y H

    2012-09-01

    We have developed a high-resolution detection technique for measuring the energy and activity of alpha decay events using low-temperature detectors. A small amount of source material containing alpha-emitting radionuclides was enclosed in a 4π metal absorber. The energy of the alpha particles as well as that of the recoiled nuclides, low-energy electrons, and low-energy x-rays and γ-rays was converted into thermal energy of the gold absorber. A metallic magnetic calorimeter serving as a fast and sensitive thermometer was thermally attached to the metal absorber. In the present report, experimental demonstrations of Q spectroscopy were made with a new meander-type magnetic calorimeter. The thermal connection between the temperature sensor and the absorber was established with annealed gold wires. Each alpha decay event in the absorber resulted in a temperature increase of the absorber and the temperature sensor. Using the spectrum measured for a drop of (226)Ra solution in a 4π gold absorber, all of the alpha emitters in the sample were identified with a demonstration of good detector linearity. The resolution of the (226)Ra spectrum showed a 3.3 keV FWHM at its Q value together with an expected gamma escape peak at the energy shifted by its γ-ray energy. Copyright © 2012 Elsevier Ltd. All rights reserved.

  7. Prototype of high resolution PET using resistive electrode position sensitive CdTe detectors

    International Nuclear Information System (INIS)

    Kikuchi, Yohei; Ishii, Keizo; Matsuyama, Shigeo; Yamazaki, Hiromichi

    2008-01-01

    Downsizing detector elements makes it possible that spatial resolutions of positron emission tomography (PET) cameras are improved very much. From this point of view, semiconductor detectors are preferable. To obtain high resolution, the pixel type or the multi strip type of semiconductor detectors can be used. However, in this case, there is a low packing ratio problem, because a dead area between detector arrays cannot be neglected. Here, we propose the use of position sensitive semiconductor detectors with resistive electrode. The CdTe detector is promising as a detector for PET camera because of its high sensitivity. In this paper, we report development of prototype of high resolution PET using resistive electrode position sensitive CdTe detectors. We made 1-dimensional position sensitive CdTe detectors experimentally by changing the electrode thickness. We obtained 750 A as an appropriate thickness of position sensitive detectors, and evaluated the performance of the detector using a collimated 241 Am source. A good position resolution of 1.2 mm full width half maximum (FWHM) was obtained. On the basis of the fundamental development of resistive electrode position sensitive detectors, we constructed a prototype of high resolution PET which was a dual head type and was consisted of thirty-two 1-dimensional position sensitive detectors. In conclusion, we obtained high resolutions which are 0.75 mm (FWHM) in transaxial, and 1.5 mm (FWHM) in axial. (author)

  8. X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

    International Nuclear Information System (INIS)

    Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

    1998-01-01

    We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

  9. Development of high temperature, radiation hard detectors based on diamond

    Energy Technology Data Exchange (ETDEWEB)

    Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

    2017-02-11

    Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

  10. Pristine carbon nanotubes based resistive temperature sensor

    International Nuclear Information System (INIS)

    Alam, Md Bayazeed; Saini, Sudhir Kumar; Sharma, Daya Shankar; Agarwal, Pankaj B.

    2016-01-01

    A good sensor must be highly sensitive, faster in response, of low cost cum easily producible, and highly reliable. Incorporation of nano-dimensional particles/ wires makes conventional sensors more effective in terms of fulfilling the above requirements. For example, Carbon Nanotubes (CNTs) are promising sensing element because of its large aspect ratio, unique electronic and thermal properties. In addition to their use for widely reported chemical sensing, it has also been explored for temperature sensing. This paper presents the fabrication of CNTs based temperature sensor, prepared on silicon substrate using low cost spray coating method, which is reliable and reproducible method to prepare uniform CNTs thin films on any substrate. Besides this, simple and inexpensive method of preparation of dispersion of single walled CNTs (SWNTs) in 1,2 dichlorobenzene by using probe type ultrasonicator for debundling the CNTs for improving sensor response were used. The electrical contacts over the dispersed SWNTs were taken using silver paste electrodes. Fabricated sensors clearly show immediate change in resistance as a response to change in temperature of SWNTs. The measured sensitivity (change in resistance with temperature) of the sensor was found ∼ 0.29%/°C in the 25°C to 60°C temperature range.

  11. Pristine carbon nanotubes based resistive temperature sensor

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Md Bayazeed, E-mail: bayazeed786@gmail.com [CSIR-Central Electronics Engineering Research Institute (CEERI, Pilani, India) (India); Jamia Millia Islamia (New Delhi, India) (India); Saini, Sudhir Kumar, E-mail: sudhirsaini1310@gmail.com [CSIR-Central Electronics Engineering Research Institute (CEERI, Pilani, India) (India); Sharma, Daya Shankar, E-mail: dssharmanit15@gmail.com [CSIR-Central Electronics Engineering Research Institute (CEERI, Pilani, India) (India); Maulana Azad National Institute of Technology (MANIT, Bhopal, India) (India); Agarwal, Pankaj B., E-mail: agarwalbpankj@gmail.com [CSIR-Central Electronics Engineering Research Institute (CEERI, Pilani, India) (India); Academy for Scientific and Innovative Research (AcSIR, Delhi, India) (India)

    2016-04-13

    A good sensor must be highly sensitive, faster in response, of low cost cum easily producible, and highly reliable. Incorporation of nano-dimensional particles/ wires makes conventional sensors more effective in terms of fulfilling the above requirements. For example, Carbon Nanotubes (CNTs) are promising sensing element because of its large aspect ratio, unique electronic and thermal properties. In addition to their use for widely reported chemical sensing, it has also been explored for temperature sensing. This paper presents the fabrication of CNTs based temperature sensor, prepared on silicon substrate using low cost spray coating method, which is reliable and reproducible method to prepare uniform CNTs thin films on any substrate. Besides this, simple and inexpensive method of preparation of dispersion of single walled CNTs (SWNTs) in 1,2 dichlorobenzene by using probe type ultrasonicator for debundling the CNTs for improving sensor response were used. The electrical contacts over the dispersed SWNTs were taken using silver paste electrodes. Fabricated sensors clearly show immediate change in resistance as a response to change in temperature of SWNTs. The measured sensitivity (change in resistance with temperature) of the sensor was found ∼ 0.29%/°C in the 25°C to 60°C temperature range.

  12. Application of PSpice circuit simulator in development of resistive plate chamber detector

    International Nuclear Information System (INIS)

    Wang Yaping; Cai Xu

    2008-01-01

    An electrical model was presented for resistive plate chamber (RPC) detector. The readout signals of RPC detector were studied with PSpice simulation based on the model. The simulation results show a good agreement with real data and authoritative data. Physical performance of RPC detector can be predicted by the PSpice simulation, so this is an efficient means to optimize RPC detector's research and development. (authors)

  13. Stable room-temperature thallium bromide semiconductor radiation detectors

    Science.gov (United States)

    Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

    2017-10-01

    Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  14. Stable room-temperature thallium bromide semiconductor radiation detectors

    Directory of Open Access Journals (Sweden)

    A. Datta

    2017-10-01

    Full Text Available Thallium bromide (TlBr is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br− species, with an estimated electro-diffusion velocity of 10−8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br− ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

  15. Radiation damage measurements in room temperature semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Franks, L.A.; Olsen, R.W.; James, R.B.; Brunett, B.A.; Walsh, D.S.; Doyle, B.L.; Vizkelethy, G.; Trombka, J.I.

    1998-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI 2 ) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 10 p/cm 2 and significant bulk leakage after 10 12 p/cm 2 . CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 x 10 9 p/cm 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10 10 n/cm 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 x 10 10 α/cm 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 x 10 9 α/cm 2 . CT detectors show resolution losses after fluences of 3 x 10 9 p/cm 2 at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 x 10 10 n/cm 2 . Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10 12 p/cm 2 and with 1.5 GeV protons at fluences up to 1.2 x 10 8 p/cm 2 . Neutron exposures at 8 MeV have been reported at fluences up to 10 15 n/cm 2 . No radiation damage was reported under these irradiation conditions

  16. Electric fields, weighting fields, signals and charge diffusion in detectors including resistive materials

    CERN Document Server

    Riegler, Werner

    2016-11-07

    In this report we discuss static and time dependent electric fields in detector geometries with an arbitrary number of parallel layers of a given permittivity and weak conductivity. We derive the Green's functions i.e. the field of a point charge, as well as the weighting fields for readout pads and readout strips in these geometries. The effect of 'bulk' resistivity on electric fields and signals is investigated. The spreading of charge on thin resistive layers is also discussed in detail, and the conditions for allowing the effect to be described by the diffusion equation is discussed. We apply the results to derive fields and induced signals in Resistive Plate Chambers, Micromega detectors including resistive layers for charge spreading and discharge protection as well as detectors using resistive charge division readout like the MicroCAT detector. We also discuss in detail how resistive layers affect signal shapes and increase crosstalk between readout electrodes.

  17. Electric fields, weighting fields, signals and charge diffusion in detectors including resistive materials

    International Nuclear Information System (INIS)

    Riegler, W.

    2016-01-01

    In this report we discuss static and time dependent electric fields in detector geometries with an arbitrary number of parallel layers of a given permittivity and weak conductivity. We derive the Green's functions i.e. the field of a point charge, as well as the weighting fields for readout pads and readout strips in these geometries. The effect of 'bulk' resistivity on electric fields and signals is investigated. The spreading of charge on thin resistive layers is also discussed in detail, and the conditions for allowing the effect to be described by the diffusion equation is discussed. We apply the results to derive fields and induced signals in Resistive Plate Chambers, MICROMEGAS detectors including resistive layers for charge spreading and discharge protection as well as detectors using resistive charge division readout like the MicroCAT detector. We also discuss in detail how resistive layers affect signal shapes and increase crosstalk between readout electrodes.

  18. Advanced radiation detector development: Advanced semiconductor detector development: Development of a oom-temperature, gamma ray detector using gallium arsenide to develop an electrode detector

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-11-01

    The advanced detector development project at the University of Michigan has completed the first full year of its current funding. Our general goals are the development of radiation detectors and spectrometers that are capable of portable room temperature operation. Over the past 12 months, we have worked primarily in the development of semiconductor spectrometers with open-quotes single carrierclose quotes response that offer the promise of room temperature operation and good energy resolution in gamma ray spectroscopy. We have also begun a small scale effort at investigating the properties of a small non-spectroscopic detector system with directional characteristics that will allow identification of the approximate direction in which gamma rays are incident. These activities have made use of the extensive clean room facilities at the University of Michigan for semiconductor device fabrication, and also the radiation measurement capabilities provided in our laboratory in the Phoenix Building on the North Campus. In addition to our laboratory based activities, Professor Knoll has also been a participant in several Department of Energy review activities held in the Forrestal Building and at the Germantown site. The most recent of these has been service on a DOE review panel chaired by Dr. Hap Lamonds that is reviewing the detector development programs supported through the Office of Arms Control and International Security

  19. A new temperature threshold detector - Application to missile monitoring

    Science.gov (United States)

    Coston, C. J.; Higgins, E. V.

    Comprehensive thermal surveys within the case of solid propellant ballistic missile flight motors are highly desirable. For example, a problem involving motor failures due to insulator cracking at motor ignition, which took several years to solve, could have been identified immediately on the basis of a suitable thermal survey. Using conventional point measurements, such as those utilizing typical thermocouples, for such a survey on a full scale motor is not feasible because of the great number of sensors and measurements required. An alternate approach recognizes that temperatures below a threshold (which depends on the material being monitored) are acceptable, but higher temperatures exceed design margins. In this case hot spots can be located by a grid of wire-like sensors which are sensitive to temperature above the threshold anywhere along the sensor. A new type of temperature threshold detector is being developed for flight missile use. The considered device consists of KNO3 separating copper and Constantan metals. Above the KNO3 MP, galvanic action provides a voltage output of a few tenths of a volt.

  20. Direct-reading dial for noise temperature and noise resistance

    DEFF Research Database (Denmark)

    Diamond, J.M.

    1967-01-01

    An attenuator arrangement for a noise generator is described. The scheme permits direct reading of both noise resistance and noise temperature¿the latter with a choice of source resistance.......An attenuator arrangement for a noise generator is described. The scheme permits direct reading of both noise resistance and noise temperature¿the latter with a choice of source resistance....

  1. High-Rate Glass Resistive Plate Chambers For LHC Muon Detectors Upgrade

    CERN Document Server

    Laktineh, I; Cauwenbergh, S; Combret, C; Crotty, I; Haddad, Y; Grenier, G; Guida, R; Kieffer, R; Lumb, N; Mirabito, L; Schirra, F; Seguin, N; Tytgat, M; Van der Donckt, M; Wang, Y; Zaganidis, N

    2012-01-01

    The limitation of the detection rate of standard bakelite resistive plate chambers (RPC) used as muon detector in LHC experiments is behind the absence of such detectors in the high TJ regions in both CMS and ATLAS detectors. RPCs made with low resistivity glass plates (10ID O.cm) could be an adequate solution to equip the high TJ regions extending thus both the trigger efficiency and the physics performance. Different beam tests with single and multi-gap configurations using the new glass have shown that such detectors can operate at few thousands Hzlcm2 with high efficiency( > 90%).

  2. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

    1992-02-01

    Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

  3. Estimation of interface resistivity in bonded Si for the development of high performance radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Nomiya, Seiichiro; Onabe, Hideaki

    2007-01-01

    For the development of high performance radiation detectors, direct bonding of Si wafers would be an useful method. Previously, p-n bonded Si were fabricated and they showed diode characteristics. The interface resistivity was, however, not investigated in detail. For the study of interface resistivity, n-type Si wafers with different resistivities were bonded. The resistivity of bonded Si wafers were measured and the interface resistivity was estimated by comparing with the results of model calculations. (author)

  4. Equivalent network for resistance and temperature coefficient of resistance versus temperature and composition of thick resistive films

    International Nuclear Information System (INIS)

    Kusy, A.

    1987-01-01

    Two types of elementary resistances in thick resistive films have been considered: (i) constriction resistance R/sub C/ determined by the bulk properties of conducting material and by the geometry of constriction, and (ii) barrier resistance R/sub B/ determined by the parameters of a thermally activated type of tunneling process and by the geometry of the metal-insulator-metal unit. On this basis a resistance network composed of a large number of the two types of resistances has been defined. The network has been considered as being equivalent to thick resistive film (TRF) from the point of view of the resistance and temperature coefficient of resistance (TCR). The parameters of this network have been evaluated by the computer-aided approximation of the experimental data found for RuO 2 -based TRFs. On the basis of the equations derived for the network as well as the results of the approximation process, it can be concluded that the small values of the network TCR result from the superposition of the TCR of the conducting component β/sub C/ and of the temperature coefficient of barrier resistance α/sub B/. In this superposition β/sub C/ is attenuated (by 1--2 orders of magnitude), while α/sub B/ is attenuated by only few percentages. The network has been found to be strongly barrier dominated

  5. Alpha-ray spectrometry at high temperature by using a compound semiconductor detector.

    Science.gov (United States)

    Ha, Jang Ho; Kim, Han Soo

    2013-11-01

    The use of conventional radiation detectors in harsh environments is limited by radiation damage to detector materials and by temperature constraints. We fabricated a wide-band gap semiconductor radiation detector based on silicon carbide. All the detector components were considered for an application in a high temperature environment like a nuclear reactor core. The radiation response, especially to alpha particles, was measured using an (241)Am source at variable operating voltages at room temperature in the air. The temperature on detector was controlled from 30°C to 250°C. The alpha-particle spectra were measured at zero bias operation. Even though the detector is operated at high temperature, the energy resolution as a function of temperature is almost constant within 3.5% deviation. Copyright © 2013 Elsevier Ltd. All rights reserved.

  6. Introduction or 'Low-temperature detectors: yesterday, today and tomorrow'

    International Nuclear Information System (INIS)

    Fiorini, E.

    2004-01-01

    I would like first to express my deep gratitude to Flavio Gatti and to the Organizing committee for inviting me to introduce the tenths of these Workshops, which have become more and more stimulating with years. I cannot avoid to emphasize how much I miss, and I am sure we all miss, Sandro Vitale, who started this activity in Genoa. He was for me not only a dear friend, but also, despite our similar ages, an inspiring teacher. I cannot obviously review what will be reported in this week here, which looks already very exciting just at a glance to the program. I will limit myself to some personal recollection and to some arguments which I personally see of great interest for the application of low-temperature detectors in nuclear, subnuclear and astroparticle physics

  7. The Future of Low Temperature Germanium as Dark Matter Detectors

    CERN Multimedia

    CERN. Geneva

    2009-01-01

    The Weakly Interactive Massive Particles (WIMPs) represent one of the most attractive candidates for the dark matter in the universe. With the combination of experiments attempting to detect WIMP scattering in the laboratory, of searches for their annihilation in the cosmos and of their potential production at the LHC, the next five years promise to be transformative. I will review the role played so far by low temperature germanium detectors in the direct detection of WIMPs. Because of its high signal to noise ratio, the simultaneous measurement of athermal phonons and ionization is so far the only demonstrated approach with zero-background. I will argue that this technology can be extrapolated to a target mass of the order of a tonne at reasonable cost and can keep playing a leading role, complementary to noble liquid technologies. I will describe in particular GEODM, the proposed Germanium Observatory for Dark Matter at the US Deep Underground Science and Engineering Laboratory (DUSEL).

  8. A Study of the Operation of Especially Designed Photosensitive Gaseous Detectors at Cryogenic Temperatures

    CERN Document Server

    Periale, L; Lund-Jensen, B; Pavlopoulos, P; Peskov, Vladimir; Picchi, P; Pietropaolo, F

    2006-01-01

    In some experiments and applications there is need for large-area photosensitive detectors to operate at cryogenic temperatures. Nowadays, vacuum PMs are usually used for this purpose. We have developed special designs of planar photosensitive gaseous detectors able to operate at cryogenic temperatures. Such detectors are much cheaper PMs and are almost insensitive to magnetic fields. Results of systematic measurements of their quantum efficiencies, the maximum achievable gains and long-term stabilities will be presented. The successful operation of these detectors open realistic possibilities in replacing PMs by photosensitive gaseous detectors in some applications dealing with cryogenic liquids; for example in experiments using noble liquid TPCs or noble liquid scintillating calorimeters.

  9. A variable temperature cryostat that produces in situ clean-up germanium detector surfaces

    International Nuclear Information System (INIS)

    Pehl, R.H.; Madden, N.W.; Malone, D.F.; Cork, C.P.; Landis, D.A.; Xing, J.S.; Friesel, D.L.

    1988-11-01

    Variable temperature cryostats that can maintain germanium detectors at temperatures from 82 K to about 400 K while the thermal shield surrounding the detectors remains much colder when the detectors are warmed have been developed. Cryostats such as these offer the possibility of cryopumping material from the surface of detectors to the colder thermal shield. The diode characteristics of several detectors have shown very significant improvement following thermal cycles up to about 150 K in these cryostats. Important applications for cryostats having this attribute are many. 4 figs

  10. Pressure balanced type membrane covered polarographic oxygen detectors for use in high temperature-high pressure water, (1)

    International Nuclear Information System (INIS)

    Nakayama, Norio; Uchida, Shunsuke

    1984-01-01

    A pressure balanced type membrane covered polarographic oxygen detector was developed to determine directly oxygen concentrations in high temperature, high pressure water without cooling and pressure reducing procedures. The detector is characterized by the following features: (1) The detector body and the membrane for oxygen penetration are made of heat resistant resin. (2) The whole detector body is contained in a pressure chamber where interior and exterior pressures of the detector are balanced. (3) Thermal expansion of the electrolyte is absorbed by deformation of a diaphragm attached to the detector bottom. (4) The effect of dissolved Ag + on the signal current is eliminated by applying a guard electrode. As a result of performance tests at elevated temperature, it was demonstrated that a linear relationship between oxygen concentration and signal current was obtained up to 285 0 C, which was stabilized by the guard electrode. The minimum O 2 concentration detectable was 0.03ppm (9.4 x 10 -7 mol/kg). (author)

  11. Temperature Dependency and Alpha Response of Semi-Insulating GaAs Schottky Radiation Detector at Low Bias Voltage

    International Nuclear Information System (INIS)

    Kang, Sang Mook; Ha, Jang Ho; Park, Se Hwan; Kim, Han Soo; Kim, Yong Kyun

    2009-01-01

    The last decade has seen a growing interest in semiconductor radiation detectors operated at room or nearly room temperature. Great efforts have been invested in the development of radiation detectors based on semi-insulating (SI) GaAs. The main reasons are as follows: (i) high resistance against radiation damage; (ii) it possesses a good energy resolution, which relates to its active volume; (iii) such a detector also exhibits fast signal rise times, which results from a high mobility and drift velocity of charge carriers; (iv) its large band gap energy allows a SI GaAs detector to operate at room temperature. Other important features are a good technology base and low production and operating costs. An alpha particle monitoring method for the detection of Pu-238 and U-235 is becoming important in homeland security. Alpha measurement in a vacuum is known to provide a good resolution sufficient to separate an isotope abundance in nuclear materials. However, in order to apply it to a high radiation field like a spent fuel treatment facility, a nuclear material loading and unloading process in a vacuum is one of the great disadvantages. Therefore, the main technical issue is to develop a detector for alpha detection at air condition and low power operation for integration type device. In this study we fabricated GaAs Schottky detector by using semi-insulating (SI) wafer and measured current-voltage characteristic curve and alpha response with 5.5 MeV Am-241 source

  12. High temperature chemically resistant polymer concrete

    Science.gov (United States)

    Sugama, T.; Kukacka, L.E.

    High temperature chemically resistant, non-aqueous polymer concrete composites consist of about 12 to 20% by weight of a water-insoluble polymer binder. The binder is polymerized in situ from a liquid vinyl-type monomer or mixture of vinyl containing monomers such as triallylcyanurate, styrene, acrylonitrile, acrylamide, methacrylamide, methyl-methacrylate, trimethylolpropane trimethacrylate and divinyl benzene. About 5 to 40% by weight of a reactive inorganic filler selected from the group consisting of tricalcium silicate and dicalcium silicate and mixtures containing less than 2% free lime, and about 48 to 83% by weight of silica sand/ and a free radical initiator such as di-tert-butyl peroxide, azobisisobutyronitrile, benzoyl peroxide, lauryl peroxide, other orgaic peroxides and combinations to initiate polymerization of the monomer in the presence of the inorganic filers are used.

  13. Assessment of ambient-temperature, high-resolution detectors for nuclear safeguards applications

    International Nuclear Information System (INIS)

    Ruhter, W.D.; McQuaid, J.H.; Lavietes, A.

    1993-01-01

    High-resolution, gamma- and x-ray spectrometry are used routinely in nuclear safeguards verification measurements of plutonium and uranium in the field. These measurements are now performed with high-purity germanium (HPGe) detectors that require cooling liquid-nitrogen temperatures, thus limiting their utility in field and unattended safeguards measurement applications. Ambient temperature semiconductor detectors may complement HPGe detectors for certain safeguards verification applications. Their potential will be determined by criteria such as their performance, commercial availability, stage of development, and costs. We have conducted as assessment of ambient temperature detectors for safeguards measurement applications with these criteria in mind

  14. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  15. High irradiation and ageing properties of resistive Micromegas detectors at the new CERN Gamma Irradiation Facility

    CERN Document Server

    Andreou, Dimitra

    2016-01-01

    Resistive Micromegas have been developed in recent years with the aim of making this technology usable in HEP experiments where the high sparking rate of classical Micromegas is not tolerable. A resistive Micromegas with four layers and an active surface of 0.5 m2 each, has been designed and built at CERN as prototype of the detectors to be used for the upgrade of the ATLAS experiment. The detector has been exposed to an intense gamma source of 16 TBq in order to study the effects of ageing and evaluate the detector behavior under high irradiation.

  16. Performances and ageing study of resistive-anodes Micromegas detectors for HL-LHC environment

    CERN Document Server

    Jeanneau, F; Attié, D; Boyer, M; Derré, J; Fanourakis, G; Ferrer-Ribas, E; Galán, J; Gazis, E; Geralis, T; Giganon, A; Giomataris, I; Herlant, S; Manjarrés, J; Ntomari, E; Schune, Ph; Titov, M; Tsipolitis, G

    2012-01-01

    With the tenfold luminosity increase envisaged at the HL-LHC, the background (photons, neutrons, ...) and the event pile-up probability are expected to increase in proportion in the different experiments, especially in the forward regions like, for instance, the muons chambers of the ATLAS detector. Detectors based on the Micromegas principle should be good alternatives for the detector upgrade in the HL-LHC framework because of a good spatial ( 98%) can be achieved with resistive-anode micromegas detector. An X-rays irradiation has been also performed, showing no ageing effect after more than 21 days exposure and an integrated charge of almost 1C.

  17. Studies on discharges in Micro Pattern Gaseous Detectors, towards a spark resistant THGEM detector

    CERN Document Server

    Cantini, Cosimo; De Oliveira, Rui

    The problem afflicting any of MPGDs is the phenomenon of discharging which might be destructive in some highly energetic cases, at least being responsible of a slow aging of the detector. So far one solution has been cascading several gain elements (GEM, THGEM detectors) reducing the gain of each one; this method, spreading the charges along their path, reduce effectively the likelihood of a discharge but introduce more material due to the multiple stages of amplification. Our goal is developing a single stage THGEM detector which could withstand discharges, not reducing the gain, hence being still able to amplify low level ionizing particles while implementing some methodologies to reduce the damages due to discharge induced by high rate of particles’ flux and/or highly ionizing particles. This report describes the test bench set up to study discharges between simple structures, which are actually models of the bigger detector. The idea behind this approach is to reduce the complexity of the whole phenomen...

  18. Critical Temperature tuning of Ti/TiN multilayer films suitable for low temperature detectors

    OpenAIRE

    Giachero, A.; Day, P.; Falferi, P.; Faverzani, M.; Ferri, E.; Giordano, C.; Marghesin, B.; Mattedi, F.; Mezzena, R.; Nizzolo, R.; Nucciotti, A.

    2013-01-01

    We present our current progress on the design and test of Ti/TiN Multilayer for use in Kinetic Inductance Detectors (KIDs). Sensors based on sub-stoichiometric TiN film are commonly used in several applications. However, it is difficult to control the targeted critical temperature $T_C$, to maintain precise control of the nitrogen incorporation process and to obtain a production uniformity. To avoid these problems we investigated multilayer Ti/TiN films that show a high uniformity coupled wit...

  19. The development of gaseous detectors with solid photocathodes for low temperature applications

    CERN Document Server

    Periale, L.; Iacobaeus, C.; Francke, T.; Lund-Jensen, B.; Pavlopoulos, N.; Picchi, P.; Pietropaolo, F.

    2004-01-01

    There are several applications and fundamental research areas which require the detection of VUV light at cryogenic temperatures. For these applications we have developed and successfully tested special designs of gaseous detectors with solid photocathodes able to operate at low temperatures: sealed gaseous detectors with MgF2 windows and windowless detectors. We have experimentally demonstrated, that both primary and secondary (due to the avalanche multiplication inside liquids) scintillation lights could be recorded by photosensitive gaseous detectors. The results of this work may allow one to significantly improve the operation of some noble liquid gas TPCs.

  20. Temperature dependence of contact resistance at metal/MWNT interface

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

    2016-07-11

    Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

  1. Mechanism of high-temperature resistant water-base mud

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P

    1981-01-01

    Based on experiments, the causes and laws governing the changes in the performance of water-base mud under high temperature are analyzed, and the requisites and mechanism of treating agents resisting high temperature are discussed. Ways and means are sought for inhibiting, delaying and making use of the effect of high temperature on the performance of mud, while new ideas and systematic views have been expressed on the preparation of treating agents and set-up of a high temperature resistant water-base mud system. High temperature dispersion and high temperature surface inactivation of clay in the mud, as well as their effect and method of utilization are reviewed. Subjects also touched upon include degradation and cross-linking of the high-temperature resistant treating agents, their use and effect. Based on the above, the preparation of a water-base and system capable of resisting 180 to 250/sup 0/C is recommended.

  2. High temperature resistant nanofiber by bubbfil-spinning

    Directory of Open Access Journals (Sweden)

    Li Ya

    2015-01-01

    Full Text Available Heat-resisting nanofibers have many potential applications in various industries, and the bubbfil spinning is the best candidate for mass-production of such materials. Polyether sulfone/zirconia solution with a bi-solvent system is used in the experiment. Experimental result reveals that polyether sulfone/zirconia nanofibers have higher resistance to high temperature than pure polyether sulfone fibers, and can be used as high-temperature-resistant filtration materials.

  3. Development and application of nuclear radiation detector made from high resistivity silicon and compound semiconductor

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Xiufeng; Zhang Wanchang; Li Jiang

    1995-11-01

    The development of high resistivity silicon detectors and compound semiconductor detectors as well as their application in nuclear medicine are described. It emphasizes on several key techniques in fabricating detectors in order to meet their application in nuclear medicine. As for a high resistivity silicon detector, its counting rate to 125 I 28.5 keV X-ray has to be improved. So employing a conic mesa structure can increase the thickness of samples, and can raise the electric field of collecting charges under the same bias voltage. As for a GaAs detector, its performance of collecting charges has to be improved. So the thicknesses of GaAs samples are decreased and proper thermal treatment to make Ni-Ge-Au ohmic contacts are employed. Applying a suitable reverse bias voltage can obtain a fully depleted detector, and can obtain a lower forward turn-on voltage and a thinner weak electric field region. After resolving these key techniques, the performance of GaAs detectors has been distinctly improved. The count rate to 125 I X-ray has increased by three or five times under the same testing condition and background circumstance (2 refs., 8 figs., 3 tabs.)

  4. Corrosion Resistant Coatings for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Besman, T.M.; Cooley, K.M.; Haynes, J.A.; Lee, W.Y.; Vaubert, V.M.

    1998-12-01

    Efforts to increase efficiency of energy conversion devices have required their operation at ever higher temperatures. This will force the substitution of higher-temperature structural ceramics for lower temperature materials, largely metals. Yet, many of these ceramics will require protection from high temperature corrosion caused by combustion gases, atmospheric contaminants, or the operating medium. This paper discusses examples of the initial development of such coatings and materials for potential application in combustion, aluminum smelting, and other harsh environments.

  5. Silicon detectors for x and gamma-ray with high radiation resistance

    International Nuclear Information System (INIS)

    Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

    2001-01-01

    Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

  6. Temperature-compensated pressure detectors and transmitter for use in hostile environment

    International Nuclear Information System (INIS)

    Di Noia, E.J.; Breunich, T.R.

    1984-01-01

    A pressure or differential pressure detector suitable for use in a hostile environment, for example, under high pressure, temperature, and radiation conditions in the containment vessel of a nuclear generating plant includes as a transducer a linear variable differential transformer (LVDT) disposed within a detector housing designed to withstand temperatures of about 260 deg C. A signal detecting and conditioning circuit remote from the detector housing includes a demodulator for producing X and Y demodulated signals respectively from A and B secondary windings of the LVDT, a summing circuit for producing a temperature analog voltage X + Y, a subtractor for providing a differential pressure analog voltage X - Y, and a multiplier for multiplying the differential pressure analog voltage X - Y by a temperature compensation voltage X + Y - Ref based on the temperature analog voltage to provide a resulting temperature-compensated differential pressure analog signal. (author)

  7. Influence of Temperature and Humidity on Bakelite Resistivity

    CERN Document Server

    Arnaldi, R; Barret, V; Bastid, N; Blanchard, G; Chiavassa, E; Cortese, P; Crochet, Philippe; Dellacasa, G; De Marco, N; Dupieux, P; Espagnon, B; Fargeix, J; Ferretti, A; Gallio, M; Lamoine, L; Luquin, Lionel; Manso, F; Mereu, P; Métivier, V; Musso, A; Oppedisano, C; Piccotti, A; Rahmani, A; Royer, L; Roig, O; Scalas, E; Scomparin, E; Vercellin, Ermanno

    1999-01-01

    Presentation made at RPC99 and submitted to Elsevier PreprintThe use of phenolic or melaminic bakelite as RPC electrodes is widespread. The electrode resistivity is an important parameter for the RPC performance. As recent studies have pointed out, the bakelite resistivity changes with temperature and is influenced by humidity. In order to gain a quantitative understanding on the influence of temperature and humidity on RPC electrodes, we assembled an apparatus to measure resistivity in well-controlled conditions. A detailed description of the experimental set-up as well as the first resistivity measurements for various laminates in different environmental conditions are presented.

  8. The Successful Operation of Hole-type Gaseous Detectors at Cryogenic Temperatures

    CERN Document Server

    Pereiale, L.; Iacobaeus, C.; Francke, T.; Lund-Jensen, B.; Pavlopoulos, P.; Picchi, P.; Pietropaolo, F.; Tokanai, F.

    2004-01-01

    We have demonstrated that hole-type gaseous detectors, GEMs and capillary plates, can operate up to 77 K. For example, a single capillary plate can operate at gains of above 10E3 in the entire temperature interval between 300 until 77 K. The same capillary plate combined with CsI photocathodes could operate perfectly well at gains (depending on gas mixtures) of 100-1000. Obtained results may open new fields of applications for capillary plates as detectors of UV light and charge particles at cryogenic temperatures: noble liquid TPCs, WIMP detectors or LXe scintillating calorimeters and cryogenic PETs.

  9. Development of data logger for atmospheric pressure, temperature and relative humidity for gas-filled detector

    International Nuclear Information System (INIS)

    Sahu, S.; Sahu, P.K.; Bhuyan, M.R.; Biswas, S.; Mohanty, B.

    2014-01-01

    At IoP-NISER an initiative has been taken to build and test micro-pattern gas detector such as Gas Electron Multiplier (GEM) for several upcoming High-Energy Physics (HEP) experiment projects. Temperature (t), atmospheric pressure (p) and relative humidity (RH) monitor and recording is very important for gas filled detector development. A data logger to monitor and record the ambient parameters such as temperature, relative humidity and pressure has been developed. With this data logger continuous recording of t, p, RH and time stamp can be done with a programmable sampling interval. This data is necessary to correct the gain of a gas filled detector

  10. Raman characterization of high temperature materials using an imaging detector

    International Nuclear Information System (INIS)

    Rosenblatt, G.M.; Veirs, D.K.

    1989-03-01

    The characterization of materials by Raman spectroscopy has been advanced by recent technological developments in light detectors. Imaging photomultiplier-tube detectors are now available that impart position information in two dimensions while retaining photon-counting sensitivity, effectively greatly reducing noise. The combination of sensitivity and reduced noise allows smaller amounts of material to be analyzed. The ability to observe small amount of material when coupled with position information makes possible Raman characterization in which many spatial elements are analyzed simultaneously. Raman spectroscopy making use of these capabilities has been used, for instance, to analyze the phases present in carbon films and fibers and to map phase-transformed zones accompanying crack propagation in toughened zirconia ceramics. 16 refs., 6 figs., 2 tabs

  11. In-beam evaluation of a medium-size Resistive-Plate WELL gaseous particle detector

    CERN Document Server

    Moleri, L.

    2016-09-27

    In-beam evaluation of a fully-equipped medium-size 30$\\times$30 cm$^2$ Resistive Plate WELL (RPWELL) detector is presented. It consists here of a single element gas-avalanche multiplier with Semitron ESD225 resistive plate, 1 cm$^2$ readout pads and APV25/SRS electronics. Similarly to previous results with small detector prototypes, stable operation at high detection efficiency (>98%) and low average pad multiplicity (~1.2) were recorded with 150 GeV muon and high-rate pion beams, in Ne/(5%CH$_4$), Ar/(5%CH$_4$) and Ar/(7%CO$_2$). This is an important step towards the realization of robust detectors suitable for applications requiring large-area coverage; among them Digital Hadron Calorimetry.

  12. Room temperature particle detectors based on indium phosphide

    Czech Academy of Sciences Publication Activity Database

    Yatskiv, Roman; Grym, Jan; Žďánský, Karel; Pekárek, Ladislav

    2010-01-01

    Roč. 612, č. 2 (2010), s. 334-337 ISSN 0168-9002 R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617 Institutional research plan: CEZ:AV0Z20670512 Keywords : Particle detector * Semi-insulating InP * High purity InP layers Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.142, year: 2010

  13. A monolithically integrated detector-preamplifier on high-resistivity silicon

    International Nuclear Information System (INIS)

    Holland, S.; Spieler, H.

    1990-02-01

    A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

  14. High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

  15. Charge collection in Si detectors irradiated in situ at superfluid helium temperature

    Science.gov (United States)

    Verbitskaya, Elena; Eremin, Vladimir; Zabrodskii, Andrei; Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R.; Egorov, Nicolai; Härkönen, Jaakko

    2015-10-01

    Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×1016 p/cm2. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment.

  16. Study on the high temperature crack resistance of tungsten

    International Nuclear Information System (INIS)

    Uskov, E.I.; Babak, A.V.

    1983-01-01

    The possibility of a multiple use of tungsten specimens in crack resistance tests in the temperature range of 600-2000 deg C is studied. It is established experimentally that the minimum length of growth of a main crack is 1x10 -4 m for the most effective repeated use of specimens. A flow diagram of mechanical tests is suggested for investigating high temperature tungsten crack resistance and estimating the degree of weakening the grain-boundary bond

  17. CDZNTE ROOM-TEMPERATURE SEMICONDUCTOR GAMMA-RAY DETECTOR FOR NATIONAL-SECURITY APPLICATIONS.

    Energy Technology Data Exchange (ETDEWEB)

    CAMARDA,G.S.; BOLOTNIKOV, A.E.; CUI, Y.; HOSSAIN, A.; KOHMAN, K.T.; JAMES, R.B.

    2007-05-04

    One important mission of the Department of Energy's National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.

  18. Radiation damage measurements in room-temperature semiconductor radiation detectors

    CERN Document Server

    Franks, L A; Olsen, R W; Walsh, D S; Vizkelethy, G; Trombka, J I; Doyle, B L; James, R B

    1999-01-01

    The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI sub 2) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10 sup 1 sup 0 p/cm sup 2 and significant bulk leakage after 10 sup 1 sup 2 p/cm sup 2. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5x10 sup 9 p/cm sup 2 in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from a moderated fission spectrum of neutrons after fluences up to 10 sup 1 sup 0 n/cm sup 2 , although activation was evident. Exposures of CZT to 5 MeV alpha particles at fluences up to 1.5x10 sup 1 sup 0 alpha/cm sup 2 produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5x10 sup 9 alpha/cm sup 2. CT detectors show resolution...

  19. Performance evaluation of a lossy transmission lines based diode detector at cryogenic temperature.

    Science.gov (United States)

    Villa, E; Aja, B; de la Fuente, L; Artal, E

    2016-01-01

    This work is focused on the design, fabrication, and performance analysis of a square-law Schottky diode detector based on lossy transmission lines working under cryogenic temperature (15 K). The design analysis of a microwave detector, based on a planar gallium-arsenide low effective Schottky barrier height diode, is reported, which is aimed for achieving large input return loss as well as flat sensitivity versus frequency. The designed circuit demonstrates good sensitivity, as well as a good return loss in a wide bandwidth at Ka-band, at both room (300 K) and cryogenic (15 K) temperatures. A good sensitivity of 1000 mV/mW and input return loss better than 12 dB have been achieved when it works as a zero-bias Schottky diode detector at room temperature, increasing the sensitivity up to a minimum of 2200 mV/mW, with the need of a DC bias current, at cryogenic temperature.

  20. Using electrical resistance tomography to map subsurface temperatures

    Science.gov (United States)

    Ramirez, A.L.; Chesnut, D.A.; Daily, W.D.

    1994-09-13

    A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations. 1 fig.

  1. Using electrical resistance tomography to map subsurface temperatures

    Science.gov (United States)

    Ramirez, Abelardo L.; Chesnut, Dwayne A.; Daily, William D.

    1994-01-01

    A method is provided for measuring subsurface soil or rock temperatures remotely using electrical resistivity tomography (ERT). Electrical resistivity measurements are made using electrodes implanted in boreholes driven into the soil and/or at the ground surface. The measurements are repeated as some process changes the temperatures of the soil mass/rock mass. Tomographs of electrical resistivity are calculated based on the measurements using Poisson's equation. Changes in the soil/rock resistivity can be related to changes in soil/rock temperatures when: (1) the electrical conductivity of the fluid trapped in the soil's pore space is low, (2) the soil/rock has a high cation exchange capacity and (3) the temperature changes are sufficiently high. When these three conditions exist the resistivity changes observed in the ERT tomographs can be directly attributed to changes in soil/rock temperatures. This method provides a way of mapping temperature changes in subsurface soils remotely. Distances over which the ERT method can be used to monitor changes in soil temperature range from tens to hundreds of meters from the electrode locations.

  2. Radiation Effects of n-type, Low Resistivity, Spiral Silicon Drift Detector Hybrid Systems

    International Nuclear Information System (INIS)

    Chen, W.; De Geronimo, G.; Carini, G.A.; Gaskin, J.A.; Keister, J.W.; Li, S.; Li, Z.; Ramsey, B.D.; Siddons, D.P.; Smith, G.C.; Verbitskaya, E.

    2011-01-01

    We have developed a new thin-window, n-type, low-resistivity, spiral silicon drift detector (SDD) array - to be used as an extraterrestrial X-ray spectrometer (in varying environments) for NASA. To achieve low-energy response, a thin SDD entrance window was produced using a previously developed method. These thin-window devices were also produced on lower resistivity, thinner, n-type, silicon material, effectively ensuring their radiation hardness in anticipation of operation in potentially harsh radiation environments (such as found around the Jupiter system). Using the Indiana University Cyclotron Facility beam line RERS1, we irradiated a set of suitable diodes up to 5 Mrad and the latest iteration of our ASICs up to 12 Mrad. Then we irradiated two hybrid detectors consisting of newly, such-produced in-house (BNL) SDD chips bonded with ASICs with doses of 0.25 Mrad and 1 Mrad. Also we irradiated another hybrid detector consisting of previously produced (by KETEK) on n-type, high-resistivity SDD chip bonded with BNL's ASICs with a dose of 1 Mrad. The measurement results of radiated diodes (up to 5 Mrad), ASICs (up to 12 Mrad) and hybrid detectors (up to 1 Mrad) are presented here.

  3. High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice

    Science.gov (United States)

    Razeghi, Manijeh; Nguyen, Binh-Minh; Delaunay, Pierre-Yves; Abdollahi Pour, Siamak; Huang, Edward Kwei-wei; Manukar, Paritosh; Bogdanov, Simeon; Chen, Guanxi

    2010-01-01

    Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x1013cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.

  4. Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.F., E-mail: dallabe@disi.unitn.it [DISI, Università di Trento, and INFN Trento, Trento (Italy); RSens srl, Modena (Italy); Tyzhnevyi, V. [DISI, Università di Trento, and INFN Trento, Trento (Italy); Bosi, A.; Bonaiuti, M. [RSens srl, Modena (Italy); Angelini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Forti, F.; Giorgi, M.A.; Morsani, F.; Paoloni, E.; Rizzo, G.; Walsh, J. [Dipartimento di Fisica, Università di Pisa, and INFN Pisa, Pisa (Italy); Lusiani, A. [Scuola Normale Superiore and INFN Pisa, Pisa (Italy); Ciolini, R.; Curzio, G.; D' Errico, F.; Del Gratta, A. [Dipartimento di Ingegneria Meccanica, Nucleare e della Produzione, Università di Pisa, Pisa (Italy); Bidinelli, L. [En and tech, Università di Modena e Reggio Emilia, Reggio Emilia (Italy); RSens srl, Modena (Italy); and others

    2013-08-01

    A battery-powered, wireless Radon sensor has been designed and realized using a BJT, fabricated on a high-resistivity-silicon substrate, as a radiation detector. Radon daughters are electrostatically collected on the detector surface. Thanks to the BJT internal amplification, real-time α particle detection is possible using simple readout electronics, which records the particle arrival time and charge. Functional tests at known Radon concentrations, demonstrated a sensitivity up to 4.9 cph/(100 Bq/m{sup 3}) and a count rate of 0.05 cph at nominally-zero Radon concentration.

  5. Temperature influence and reset voltage study of bipolar resistive ...

    Indian Academy of Sciences (India)

    Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of off/on reduced when the measured temperature decreased. When the - measurement temperature decreases, on decreases obviously ...

  6. Room temperature X- and gamma-ray detectors using thallium bromide crystals

    CERN Document Server

    Hitomi, K; Shoji, T; Suehiro, T; Hiratate, Y

    1999-01-01

    Thallium bromide (TlBr) is a compound semiconductor with wide band gap (2.68 eV) and high X- and gamma-ray stopping power. The TlBr crystals were grown by the horizontal travelling molten zone (TMZ) method using purified material. Two types of room temperature X- and gamma-ray detectors were fabricated from the TlBr crystals: TlBr detectors with high detection efficiency for positron annihilation gamma-ray (511 keV) detection and TlBr detectors with high-energy resolution for low-energy X-ray detection. The detector of the former type demonstrated energy resolution of 56 keV FWHM (11%) for 511 keV gamma-rays. Energy resolution of 1.81 keV FWHM for 5.9 keV was obtained from the detector of the latter type. In order to analyze noise characteristics of the detector-preamplifier assembly, the equivalent noise charge (ENC) was measured as a function of the amplifier shaping time for the high-resolution detector. This analysis shows that parallel white noise and 1/f noise were dominant noise sources in the detector...

  7. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

    Energy Technology Data Exchange (ETDEWEB)

    Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2014-07-14

    In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

  8. Heavy-ion test of detectors with conventional and resistive Micromegas used in TPC configuration

    Energy Technology Data Exchange (ETDEWEB)

    Ducret, Jean-Eric, E-mail: jean-eric.ducret@cea.f [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); Legou, Philippe [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); Lukasik, Jerzy [Institute of Nuclear Physics, IFJ-PAN, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Boudard, Alain; Combet, Michel [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); Czech, BronisLaw [Institute of Nuclear Physics, IFJ-PAN, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Durand, Robert; Gorbinet, Thomas; Le Bourlout, Pascal; Leray, Sylvie [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); Matousek, Vladislav [Institute of Physics, Slovak Academy of Sciences, Dubravska cesta 9, 854 11 Bratislava (Slovakia); Nizery, Francois [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); PawLowski, Piotr [Institute of Nuclear Physics, IFJ-PAN, ul. Radzikowskiego 152, 31-342 Krakow (Poland); Salsac, Marie-Delphine [Commissariat a l' Energie Atomique, IRFU, F91191 Gif sur Yvette (France); Yordanov, Orlin [Institute of Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72, Tzanigradsko chaussee Blvd, BG-1784 Sofia (Bulgaria)

    2011-02-01

    We have performed tests of Micromegas detector prototypes using the heavy-ion beams from the SIS synchrotron of GSI (Darmstadt, Germany). The beams varied from {sup 12}C{sup 6+} to {sup 179}Au{sup 65+} and from 250 to 1000 MeV per nucleon. We have tested two amplification technologies, conventional and resistive Micromegas, and two construction concepts, bulk-Micromegas and micro-meshes screwed on the PCB. The obtained position resolution below 200{mu}m for 5 mm wide strips implies that the bulk resistive Micromegas technology might meet the requirements of the future R3B TPC project. We also developed a fast and very low noise front-end electronics connected directly to the Printed Circuit Board (PCB) of the detector itself. This concept has shown very good performances and robustness.

  9. The Use of Low Temperature Detectors for Direct Measurements of the Mass of the Electron Neutrino

    Directory of Open Access Journals (Sweden)

    A. Nucciotti

    2016-01-01

    Full Text Available Recent years have witnessed many exciting breakthroughs in neutrino physics. The detection of neutrino oscillations has proved that neutrinos are massive particles, but the assessment of their absolute mass scale is still an outstanding challenge in today particle physics and cosmology. Since low temperature detectors were first proposed for neutrino physics experiments in 1984, there has been tremendous technical progress: today this technique offers the high energy resolution and scalability required to perform competitive experiments challenging the lowest electron neutrino masses. This paper reviews the thirty-year effort aimed at realizing calorimetric measurements with sub-eV neutrino mass sensitivity using low temperature detectors.

  10. Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Borer, K.; Janos, S.; Palmieri, V.G.; Dezillie, B.; Li, Z.; Collins, P.; Niinikoski, T.O.; Lourenco, C.; Sonderegger, P.; Borchi, E.; Bruzzi, M.; Pirollo, S.; Granata, V.; Pagano, S.; Chapuy, S.; Dimcovski, Z.; Grigoriev, E.; Bell, W.; Devine, S.R.H.; O'Shea, V.; Smith, K.; Berglund, P.; Boer, W. de; Hauler, F.; Heising, S.; Jungermann, L.; Casagrande, L.; Cindro, V.; Mikuz, M.; Zavartanik, M.; Via, C. da; Esposito, A.; Konorov, I.; Paul, S.; Schmitt, L.; Buontempo, S.; D'Ambrosio, N.; Pagano, S.; Ruggiero, G.; Eremin, V.; Verbitskaya, E.

    2000-01-01

    The charge collection efficiency (CCE) of heavily irradiated silicon diode detectors was investigated at temperatures between 77 and 200 K. The CCE was found to depend on the radiation dose, bias voltage value and history, temperature, and bias current generated by light. The detector irradiated to the highest fluence 2x10 15 n/cm 2 yields a MIP signal of at least 15000 e - both at 250 V forward bias voltage, and at 250 V reverse bias voltage in the presence of a light-generated current. The 'Lazarus effect' was thus shown to extend to fluences at least ten times higher than was previously studied

  11. Aging study for resistive plate chambers of the CMS muon trigger detector

    CERN Document Server

    Abbrescia, M; Iaselli, G; Loddo, F; Maggi, M; Marangelli, B; Natali, S; Nuzzo, S; Pugliese, G; Ranieri, A; Romano, F; Altieri, S; Belli, G; Bruno, G; Guida, R; Ratti, S P; Riccardi, C; Torre, P; Vitulo, P

    2003-01-01

    A long-term aging test of a Resistive Plate Chamber (RPC) was carried out with an intense gamma **1**3**7Cs source. The detector was operated in avalanche mode and had the bakelite surface treated with linseed oil. After the irradiation the estimated dose, charge and fluence were approximately equal to the expected values after 10 years of operation in the CMS barrel region. During and after the irradiation, the RPC performance was monitored with cosmic muons and showed no relevant aging effects. Moreover, no variation of the bakelite resistance was observed.

  12. Aging study for resistive plate chambers of the CMS muon trigger detector

    Energy Technology Data Exchange (ETDEWEB)

    Abbrescia, M.; Colaleo, A.; Iaselli, G.; Loddo, F.; Maggi, M.; Marangelli, B.; Natali, S.; Nuzzo, S.; Pugliese, G. E-mail: gabriella.pugliese@ba.infn.it; Ranieri, A.; Romano, F.; Altieri, S.; Belli, G.; Bruno, G.; Guida, R.; Ratti, S.P.; Riccardi, C.; Torre, P.; Vitulo, P

    2003-12-01

    A long-term aging test of a Resistive Plate Chamber (RPC) was carried out with an intense gamma {sup 137}Cs source. The detector was operated in avalanche mode and had the bakelite surface treated with linseed oil. After the irradiation the estimated dose, charge and fluence were approximately equal to the expected values after 10 years of operation in the CMS barrel region. During and after the irradiation, the RPC performance was monitored with cosmic muons and showed no relevant aging effects. Moreover, no variation of the bakelite resistance was observed.

  13. Sources of series resistance in the Harwell solid state alpha detector

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1985-12-01

    The metal-semiconductor contacts to the Harwell solid state alpha detector have been characterized and the effect of the contact geometry has been assessed. To a reasonable approximation the latter gives rise to an emitter series resistance with an expected range of 20 +- 8 ohms. The contacts behave like parallel RC networks which become noticeably frequency dependent above ca. 100 kHz. Up to this frequency the emitter contact is likely to add 6 +- 4 ohms to the series resistance and the contribution from the base contact varies inversely with the square of the diode's diameter, being 5 +- 3 ohms for a diode with a diameter of 30 mm. (author)

  14. Future Perspectives for the Application of Low Temperature Detectors in Heavy Ion Physics

    International Nuclear Information System (INIS)

    Egelhof, P.; Kraft-Bermuth, S.

    2009-01-01

    Calorimetric low temperature detectors have the potential to become powerful tools for applications in many fields of heavy ion physics. A brief overview of heavy ion physics is given, and the next generation heavy ion facility FAIR is described with a special emphasis on the potential advantage of Low Temperature Detectors (LTDs) for applications in heavy ion physics. For prototype LTDs for the energy sensitive detection of heavy ions excellent results with respect to energy resolution down to δE/E = 1-2x10 -3 for a wide range of incident energies, and with respect to other detector properties, such as energy linearity with no indication of pulse height defects even for the heaviest ions, have been obtained. In addition, prototype detectors for hard X-rays have shown energy resolutions down to δE = 30-40eV at 60 keV. Consequently, both detector schemes have already been successfully used for first experiments. At present, the design and setup of large solid angle detector arrays is in progress. With the already achieved performance, LTDs promise a large potential for applications in atomic and nuclear heavy ion physics. A brief overview of prominent examples, including high-resolution nuclear spectroscopy, nuclear structure studies with radioactive beams, superheavy element research, as well as high-resolution atomic spectroscopy on highly charged ions and tests of QED in strong electromagnetic fields is presented.

  15. Performance, operation and detector studies with the ATLAS Resistive Plate Chambers

    International Nuclear Information System (INIS)

    Aielli, G; Bindi, M; Polini, A

    2013-01-01

    Resistive Plate Chambers provide the barrel region of the ATLAS detector with an independent muon trigger and a two-coordinate measurement. The chambers, arranged in three concentric double layers, are operated in a strong magnetic toroidal field and cover a surface area of about 4000 m 2 . During 2011 the LHC has provided proton-proton collisions at 7 TeV in the center-of-mass frame with a steady increase in instantaneous luminosity, summing up to about 5 fb −1 . The operational experience for this running period is presented along with studies of the detector performance as a function of luminosity, environmental conditions and working point settings. Non-event based information including in particular the large number of gas gap currents, individually monitored with nA accuracy, have been used to study the detector behavior with growing luminosity and beam currents. These data are shown to provide, when calibrated, an independent luminosity measurement and a crucial handle for understanding the ATLAS backgrounds well beyond the scope of muon triggering and detection. The measurements presented here allow to plan a strategy for the data taking in the next years and make some predictions about the detector performance at higher luminosities. They also improve the knowledge on RPC detector physics.

  16. High temperature GaAs X-ray detectors

    Science.gov (United States)

    Lioliou, G.; Whitaker, M. D. C.; Barnett, A. M.

    2017-12-01

    Two GaAs p+-i-n+ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 °C to -20 °C. The devices had 10 μm thick i layers with different diameters: 200 μm (D1) and 400 μm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 °C to 0.66 keV at -20 °C for the spectrometer with D1, and from 2.71 keV at 100 °C to 0.71 keV at -20 °C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

  17. Temperature relaxation and the Kapitza boundary resistance paradox

    OpenAIRE

    Brink, Alec Maassen van den; Dekker, H.

    1994-01-01

    The calculation of the Kapitza boundary resistance between dissimilar harmonic solids has since long (Little [Can. J. Phys. 37, 334 (1959)]) suffered from a paradox: this resistance erroneously tends to a finite value in the limit of identical solids. We resolve this paradox by calculating temperature differences in the final heat-transporting state, rather than with respect to the initial state of local equilibrium. For a one-dimensional model we thus derive an exact, paradox-free formula fo...

  18. Probability based high temperature engineering creep and structural fire resistance

    CERN Document Server

    Razdolsky, Leo

    2017-01-01

    This volume on structural fire resistance is for aerospace, structural, and fire prevention engineers; architects, and educators. It bridges the gap between prescriptive- and performance-based methods and simplifies very complex and comprehensive computer analyses to the point that the structural fire resistance and high temperature creep deformations will have a simple, approximate analytical expression that can be used in structural analysis and design. The book emphasizes methods of the theory of engineering creep (stress-strain diagrams) and mathematical operations quite distinct from those of solid mechanics absent high-temperature creep deformations, in particular the classical theory of elasticity and structural engineering. Dr. Razdolsky’s previous books focused on methods of computing the ultimate structural design load to the different fire scenarios. The current work is devoted to the computing of the estimated ultimate resistance of the structure taking into account the effect of high temperatur...

  19. Silicon junctionless field effect transistors as room temperature terahertz detectors

    Energy Technology Data Exchange (ETDEWEB)

    Marczewski, J., E-mail: jmarcz@ite.waw.pl; Tomaszewski, D.; Zaborowski, M. [Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warsaw (Poland); Knap, W. [Institute of High Pressure Physics of the Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland); Laboratory Charles Coulomb, Montpellier University & CNRS, Place E. Bataillon, Montpellier 34095 (France); Zagrajek, P. [Institute of Optoelectronics, Military University of Technology, ul. gen. S. Kaliskiego 2, 00-908 Warsaw (Poland)

    2015-09-14

    Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.

  20. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  1. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  2. Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

    International Nuclear Information System (INIS)

    Ziock, H.J.; Holzscheiter, K.; Morgan, A.; Palounek, A.P.T.; Ellison, J.; Heinson, A.P.; Mason, M.; Wimpenny, S.J.; Barberis, E.; Cartiglia, N.; Grillo, A.; O'Shaughnessy, K.; Rahn, J.; Rinaldi, P.; Rowe, W.A.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.; Webster, A.; Wichmann, R.; Wilder, M.; Coupal, D.; Pal, T.

    1993-01-01

    The silicon microstrip detectors that will be used in the SDC experiment at the Superconducting Super Collider (SSC) will be exposed to very large fluences of charged particles, neutrons, and gammas. The authors present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. They study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from -10 degrees C to +50 degrees C, and as a function of 800 MeV proton fluence up to 1.5 x 10 14 p/cm 2 . They express the pronounced temperature dependencies in a simple model in terms of two annealing time constants which depend exponentially on the temperature

  3. Uncertainty Analysis of the Temperature–Resistance Relationship of Temperature Sensing Fabric

    Directory of Open Access Journals (Sweden)

    Muhammad Dawood Husain

    2016-11-01

    Full Text Available This paper reports the uncertainty analysis of the temperature–resistance (TR data of the newly developed temperature sensing fabric (TSF, which is a double-layer knitted structure fabricated on an electronic flat-bed knitting machine, made of polyester as a basal yarn, and embedded with fine metallic wire as sensing element. The measurement principle of the TSF is identical to temperature resistance detector (RTD; that is, change in resistance due to change in temperature. The regression uncertainty (uncertainty within repeats and repeatability uncertainty (uncertainty among repeats were estimated by analysing more than 300 TR experimental repeats of 50 TSF samples. The experiments were performed under dynamic heating and cooling environments on a purpose-built test rig within the temperature range of 20–50 °C. The continuous experimental data was recorded through LabVIEW-based graphical user interface. The result showed that temperature and resistance values were not only repeatable but reproducible, with only minor variations. The regression uncertainty was found to be less than ±0.3 °C; the TSF sample made of Ni and W wires showed regression uncertainty of <±0.13 °C in comparison to Cu-based TSF samples (>±0.18 °C. The cooling TR data showed considerably reduced values (±0.07 °C of uncertainty in comparison with the heating TR data (±0.24 °C. The repeatability uncertainty was found to be less than ±0.5 °C. By increasing the number of samples and repeats, the uncertainties may be reduced further. The TSF could be used for continuous measurement of the temperature profile on the surface of the human body.

  4. Stability of High Temperature Standard Platinum Resistance Thermometers at High Temperatures

    OpenAIRE

    Y. A. ABDELAZIZ; F. M. MEGAHED

    2010-01-01

    An investigation of the stability of high temperature standard platinum resistance thermometers HTSPRTs has been carried out for two different designs thermometers (with nominal resistance 0.25 Ω and 2.5 Ω) from two different suppliers. The thermometers were heated for more than 160 hours at temperatures above 960 0C using a vertical furnace with a ceramic block. A study was made of the influence of the heat treatment on the stability of the resistance at the triple point of water, and on the...

  5. Long duration performance of high temperature irradiation resistant thermocouples

    International Nuclear Information System (INIS)

    Rempe, J.; Knudson, D.; Condie, K.; Cole, J.; Wilkins, S.C.

    2007-01-01

    Many advanced nuclear reactor designs require new fuel, cladding, and structural materials. Data are needed to characterize the performance of these new materials in high temperature, radiation conditions. However, traditional methods for measuring temperature in-pile degrade at temperatures above 1100 C degrees. To address this instrumentation need, the Idaho National Laboratory (INL) developed and evaluated the performance of a high temperature irradiation-resistant thermocouple that contains alloys of molybdenum and niobium. To verify the performance of INL's recommended thermocouple design, a series of high temperature (from 1200 to 1800 C) long duration (up to six months) tests has been initiated. This paper summarizes results from the tests that have been completed. Data are presented from 4000 hour tests conducted at 1200 and 1400 C that demonstrate the stability of this thermocouple (less than 2% drift). In addition, post test metallographic examinations are discussed which confirm the compatibility of thermocouple materials throughout these long duration, high temperature tests. (authors)

  6. Low-temperature technique of thin silicon ion implanted epitaxial detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

    2015-02-01

    A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

  7. Temperature cycling test of planar hyper-pure germanium radiation detector

    International Nuclear Information System (INIS)

    Sakai, Eiji

    1976-01-01

    If a Ge (Li) detector is left at the normal temperature, generally it does not recover its original performance even when it is cooled again with liquid nitrogen, as Li ions in the compensated i zone precipitate by Li drift and it returns to p type which is the state before drift. One of the devices that overcomes this shortcoming is the p-n junction Ge detector, which required the production of high purity Ge single crystals to obtain the thick depletion layer. The planar or coaxial type detectors were produced using the Ge single crystals with impurity concentration of 10 10 /cm 3 and it was recognized that they showed the gamma detecting characteristic nearly equal to Ge (Li) detectors. They are now commercially available from a few companies. The author carried out the temperature-cycling test of the planar type hyperpure Ge detector sold by Nuclear Radiation Developments, Canada. First, applying liquid nitrogen, the leakage current, static capacity, gamma ray-detecting efficiency and energy resolution were measured. Then it was returned to room temperature. Since then, irregular cycling tests were carried out 15 times. The results didn't show any significant change in the gamma ray-detecting efficiency, energy resolution and static capacity. Though leakage current changed between 9.3 and 33 pA, it does not influence on the energy resolution because of small absolute values. It may be said that it is sufficiently stable in the temperature cycling from room temperature to 77 K. (Wakatsuki, Y.)

  8. Effect of temperature on structure and corrosion resistance for ...

    Indian Academy of Sciences (India)

    The effect of plating temperatures between 60 and 90◦C on structure and corrosion resistance for elec- troless NiWP coatings ..... which helps to form fine grain. At 80 .... [23] Zhang W X, Jiang Z H, Li G Y and Jiang Q 2008 Surf. Coat. Technol.

  9. Fast temperature programming in gas chromatography using resistive heating

    NARCIS (Netherlands)

    Dallüge, J.; Ou-Aissa, R.; Vreuls, J.J.; Brinkman, U.A.T.; Veraart, J.R.

    1999-01-01

    The features of a resistive-heated capillary column for fast temperature-programmed gas chromatography (GC) have been evaluated. Experiments were carried out using a commercial available EZ Flash GC, an assembly which can be used to upgrade existing gas chromatographs. The capillary column is placed

  10. Development and Evaluation of the Muon Trigger Detector Using a Resistive Plate Chamber

    International Nuclear Information System (INIS)

    Park, Byeong Hyeon; Kim, Yong Kyun; Kang, Jeong Soo; Kim, Young Jin; Choi, Ihn Jea; Kim, Chong; Hong, Byung Sik

    2011-01-01

    The PHENIX Experiment is the largest of the four experiments that have taken data at the Relativistic Heavy Ion Collider. PHENIX, the Pioneering High Energy Nuclear Interaction eXperiment, is designed specifically to measure direct probes of the collisions such as electrons, muons, and photons. The primary goal of PHENIX is to discover and study a new state of matter called the Quark-Gluon Plasma. Among many particles, muons coming from W-boson decay gives us key information to analyze the spin of proton. Resistive plate chambers are proposed as a suitable solution as a muon trigger because of their fast response and good time resolution, flexibility in signal readout, robustness and the relatively low cost of production. The RPC detectors for upgrade were assembled and their performances were evaluated. The procedure to make the detectors better was optimized and described in detail in this thesis. The code based on ROOT was written and by using this the performance of the detectors made was evaluated, and all of the modules for north muon arm met the criteria and installation at PHENIX completed in November 2009. As RPC detectors that we made showed fast response, capacity of covering wide area with a resonable price and good spatial resolution, this will give the opportunity for applications, such as diagnosis and customs inspection system

  11. Development and evaluation of the muon trigger detector using a resistive plate chamber

    International Nuclear Information System (INIS)

    Park, Byeong Hyeon

    2010-08-01

    The PHENIX Experiment is the largest of the four experiments that have taken data at the Relativistic Heavy Ion Collider. PHENIX, the Pioneering High Energy Nuclear Interaction experiment, is an exploratory experiment for the investigation of high energy collisions of heavy ions and protons. PHENIX is designed specifically to measure direct probes of the collisions such as electrons, muons, and photons. The primary goal of PHENIX is to discover and study a new state of matter called the Quark-Gluon Plasma. Among many particles, muons coming from W-boson decay gives us key information to analyze the spin of proton. Resistive plate chambers are proposed as a suitable solution as a muon trigger because of their fast response and good time resolution, flexibility in signal readout, robustness and the relatively low cost of production. The RPC detectors for upgrade were assembled and their performances were evaluated. The procedure to make the detectors better was optimized and described in detail in this thesis. The code based on ROOT was written and by using this the performance of the detectors made was evaluated, and all of the modules for north muon arm met the criteria and installation at PHENIX completed in November 2009. As RPC detectors that we made showed fast response, capacity of covering wide area with a resonable price and good spatial resolution, this will give the opportunity for applications,such as diagnosis and customs inspection system

  12. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  13. Characteristics of fabricated si PIN-type radiation detectors on cooling temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han Soo; Jeong, Manhee; Kim, Young Soo [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of); Lee, Dong Hun [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Cho, Seung Yeon [Environmental Health Center, Yonsei University, Wonju-si 1184-4 (Korea, Republic of); Ha, Jang Ho [Korea Atomic Energy Research Institute, Jeongeup-si 580-185 (Korea, Republic of)

    2015-06-01

    Si PIN photodiode radiation detectors with three different active areas (3×3 mm{sup 2}, 5×5 mm{sup 2}, and 10×10 mm{sup 2}) were designed and fabricated at the Korea Atomic Energy Research Institute (KAERI) for low energy X- and gamma-ray detection. In Si-based semiconductor radiation detectors, one of the noise sources is thermal noise, which degrades their energy resolution performance. In this study, the temperature effects on the energy resolution were investigated using a 3×3 mm{sup 2} active area PIN photodiode radiation detector using a Thermoelectric Module (TEM) from room temperature to −23 °C. Energy resolutions from 25 keV auger electrons to 81 keV gamma-ray from a Ba-133 calibration source were measured and compared at every 10 °C interval. At −23 °C, energy resolutions were improved by 15.6% at 25 keV, 4.0% at 31 keV, and 1.2% at 81 keV in comparison with resolutions at room temperature. CsI(Tl)/PIN photodiode radiation detectors were also fabricated for relatively high energy gamma-ray detection. Energy resolutions for Cs-137, Co-60, and Na-22 sources were measured and compared with the spectral responsivity.

  14. Water resistant rhodium plated reflectors for use in the DIRC BaBar Cherenkov detector

    CERN Document Server

    Benkebil, M; Plaszczynski, S; Schune, M H; Wormser, G

    2000-01-01

    Early simulation studies showed that reflectors mounted on the photomultipliers would be useful for the DIRC BaBar Cherenkov detector, showing a gain between 20% and 30% in the number of Cherenkov photons. The proof of principle for these reflectors has been obtained during the beam test of a large-scale prototype of the DIRC detector. An extensive R and D has been conducted in order to test different metallization procedures. Indeed, the challenge was to find a metallization technique which can resist the pure de-ionized water (>15 M OMEGA) up to 10 yr. The chosen technology was rhodium plated reflectors. During the first BaBar cosmic run, the measured performance confirmed the results of the simulation, the prototype-II and the R and D.

  15. Performance studies of resistive Micromegas detectors for the upgrade of the ATLAS Muon Spectrometer

    CERN Document Server

    ATLAS Collaboration; The ATLAS collaboration

    2016-01-01

    Resistive Micromegas (Micro MEsh Gaseous Structure) detectors have proven along the years to be a reliable high rate capable detector techno- logy characterised by an excellent spatial resolution. The ATLAS colla- boration at LHC has chosen the resistive Micromegas technology (mainly for tracking), along with the small-strip Thin Gap Chambers (sTGC, mainly for triggering), for the high luminosity upgrade of the inner muon station in the high-rapidity region, the so called New Small Wheel (NSW) upgrade project. The NSW requires fully efficient Micromegas chambers with spatial resolution better than 100μm independent of the track inci- dence angle and the magnetic field (B < 0.3 T), with a rate capability up to ∼ 10kHz/cm2. Along with the precise tracking the Micromegas chambers should be able to provide a trigger signal, complementary to the sTGC, thus a decent timing resolution is required. Several tests have been performed on small (10×10cm2) and medium size (1×0.5m2) resistive Micromegas chambers (b...

  16. Detection of 14 MeV neutrons in high temperature environment up to 500 deg. C using 4H-SiC based diode detector

    Energy Technology Data Exchange (ETDEWEB)

    Szalkai, D.; Klix, A. [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344 (Germany); Ferone, R.; Issa, F.; Ottaviani, L.; Vervisch, V. [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231 -13397 Marseille Cedex 20 (France); Gehre, D. [Inst. for Nucl.- and Particle-Phys., Dresden University of Technology, Dresden 01069 (Germany); Lyoussi, A. [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance (France)

    2015-07-01

    In reactor technology and industrial applications detection of fast and thermal neutrons plays a crucial role in getting relevant information about the reactor environment and neutron yield. The inevitable elevated temperatures make neutron yield measurements problematic. Out of the currently available semiconductors 4H-SiC seems to be the most suitable neutron detector material under extreme conditions due to its high heat and radiation resistance, large band-gap and lower cost of production than in case of competing diamond detectors. In the framework of the European I-Smart project, optimal {sup 4}H-SiC diode geometries were developed for high temperature neutron detection and have been tested with 14 MeV fast neutrons supplied by a deuterium-tritium neutron generator with an average neutron flux of 10{sup 10}-10{sup 11} n/(s*cm{sup 2}) at Neutron Laboratory of the Technical University of Dresden in Germany from room temperatures up to several hundred degrees Celsius. Based on the results of the diode measurements, detector geometries appear to play a crucial role for high temperature measurements up to 500 deg. C. Experimental set-ups using SiC detectors were constructed to simulate operation in the harsh environmental conditions found in the tritium breeding blanket of the ITER fusion reactor, which is planned to be the location of neutron flux characterization measurements in the near future. (authors)

  17. Trends in the design of front-end systems for room temperature solid state detectors

    International Nuclear Information System (INIS)

    Manfredi, Pier F.; Re, Valerio

    2003-01-01

    The paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors

  18. Charge collection in Si detectors irradiated in situ at superfluid helium temperature

    Energy Technology Data Exchange (ETDEWEB)

    Verbitskaya, Elena, E-mail: elena.verbitskaya@cern.ch [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Eremin, Vladimir; Zabrodskii, Andrei [Ioffe Institute, 26 Politekhnicheskaya str., St. Petersburg 194021 (Russian Federation); Dehning, Bernd; Kurfürst, Christoph; Sapinski, Mariusz; Bartosik, Marcin R. [CERN, CH-1211, Geneva 23 (Switzerland); Egorov, Nicolai [Research Institute of Material Science and Technology, 4 Passage 4806, Moscow, Zelenograd 124460 (Russian Federation); Härkönen, Jaakko [Helsinki Institute of Physics, P.O.Box 64 (Gustaf Hallströmin katu 2) FI-00014 University of Helsinki (Finland)

    2015-10-01

    Silicon and diamond detectors operated in a superfluid helium bath are currently being considered for the upgrade of the LHC beam loss monitoring system. The detectors would be installed in immediate proximity of the superconducting coils of the triplet magnets. We present here the results of the in situ irradiation test for silicon detectors using 23 GeV protons while keeping the detectors at a temperature of 1.9 K. Red laser (630 nm) Transient Current Technique and DC current measurements were used to study the pulse response and collected charge for silicon detectors irradiated to a maximum radiation fluence of 1×10{sup 16} p/cm{sup 2}. The dependence between collected charge and irradiation fluence was parameterized using the Hecht equation and assumption of a uniform electric field distribution. The collected charge was found to degrade with particle fluence for both bias polarities. We observed that the main factor responsible for this degradation was related to trapping of holes on the donor-type radiation-induced defects. In contrast to expectations, along with formation of donors, acceptor-type defects (electron traps) are introduced into the silicon bulk. This suggests that the current models describing charge collection in irradiated silicon detectors require an extension for taking into account trapping at low temperatures with a contribution of shallow levels. New in situ irradiation tests are needed and planned now to extend statistics of the results and gain a deeper insight into the physics of low temperature detector operation in harsh radiation environment. - Highlights: • Si detectors irradiated in situ at 1.9 K by 23 GeV protons are further studied. • Trapping parameters are derived from the fits of collected charge vs. fluence data. • Acceptor-type defects are likely to be induced along with donor-type ones. • Trapping of holes has a dominating effect on the collected charge degradation. • New tests are planned to gain deeper insight

  19. Graphene-based mid-infrared room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance.

    Science.gov (United States)

    Sassi, U; Parret, R; Nanot, S; Bruna, M; Borini, S; De Fazio, D; Zhao, Z; Lidorikis, E; Koppens, F H L; Ferrari, A C; Colli, A

    2017-01-31

    There is a growing number of applications demanding highly sensitive photodetectors in the mid-infrared. Thermal photodetectors, such as bolometers, have emerged as the technology of choice, because they do not need cooling. The performance of a bolometer is linked to its temperature coefficient of resistance (TCR, ∼2-4% K -1 for state-of-the-art materials). Graphene is ideally suited for optoelectronic applications, with a variety of reported photodetectors ranging from visible to THz frequencies. For the mid-infrared, graphene-based detectors with TCRs ∼4-11% K -1 have been demonstrated. Here we present an uncooled, mid-infrared photodetector, where the pyroelectric response of a LiNbO 3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene. This is achieved by fabricating a floating metallic structure that concentrates the pyroelectric charge on the top-gate capacitor of the graphene channel, leading to TCRs up to 900% K -1 , and the ability to resolve temperature variations down to 15 μK.

  20. Temperature-induced viral resistance in Emiliania huxleyi (Prymnesiophyceae).

    Science.gov (United States)

    Kendrick, B Jacob; DiTullio, Giacomo R; Cyronak, Tyler J; Fulton, James M; Van Mooy, Benjamin A S; Bidle, Kay D

    2014-01-01

    Annual Emiliania huxleyi blooms (along with other coccolithophorid species) play important roles in the global carbon and sulfur cycles. E. huxleyi blooms are routinely terminated by large, host-specific dsDNA viruses, (Emiliania huxleyi Viruses; EhVs), making these host-virus interactions a driving force behind their potential impact on global biogeochemical cycles. Given projected increases in sea surface temperature due to climate change, it is imperative to understand the effects of temperature on E. huxleyi's susceptibility to viral infection and its production of climatically active dimethylated sulfur species (DSS). Here we demonstrate that a 3°C increase in temperature induces EhV-resistant phenotypes in three E. huxleyi strains and that successful virus infection impacts DSS pool sizes. We also examined cellular polar lipids, given their documented roles in regulating host-virus interactions in this system, and propose that alterations to membrane-bound surface receptors are responsible for the observed temperature-induced resistance. Our findings have potential implications for global biogeochemical cycles in a warming climate and for deciphering the particular mechanism(s) by which some E. huxleyi strains exhibit viral resistance.

  1. Cadmium Manganese Telluride (Cd1-xMnxTe): A potential material for room-temperature radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Hossain, A.; Cui, Y.; Bolotnikov, A.; Camarda, G.; Yang, G.; Kim, K-H.; Gul, R.; Xu, L.; Li, L.; Mycielski, A.; and James, R.B.

    2010-07-11

    Cadmium Manganese Telluride (CdMnTe) recently emerged as a promising material for room-temperature X- and gamma-ray detectors. It offers several potential advantages over CdZnTe. Among them is its optimal tunable band gap ranging from 1.7-2.2 eV, and its relatively low (< 50%) content of Mn compared to that of Zn in CdZnTe that assures this favorable band-gap range. Another important asset is the segregation coefficient of Mn in CdTe that is approximately unity compared to 1.35 for Zn in CdZnTe, so ensuring the homogenous distribution of Mn throughout the ingot; hence, a large-volume stoichiometric yield is attained. However, some materials issues primarily related to the growth process impede the production of large, defect-free single crystals. The high bond-ionicity of CdMnTe entails a higher propensity to crystallize into a hexagonal structure rather than to adopt the expected zinc-blend structure, which is likely to generate twins in the crystals. In addition, bulk defects generate in the as-grown crystals due to the dearth of high-purity Mn, which yields a low-resistivity material. In this presentation, we report on our observations of such material defects in current CdMnTe materials, and our evaluation of its potential as an alternative detector material to the well-known CdZnTe detectors. We characterized the bulk defects of several indium- and vanadium-doped Cd1-xMnxTe crystals by using several advanced techniques, viz., micro-scale mapping, white-beam x-ray diffraction/reflection topography, and chemical etching. Thereafter, we fabricated some detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Our experimental results indicate that CdMnTe materials could well prove to become a viable alternative in the near future.

  2. Real-time particle volume fraction measurement in centrifuges by wireless electrical resistance detector

    International Nuclear Information System (INIS)

    Nagae, Fumiya; Okawa, Kazuya; Matsuno, Shinsuke; Takei, Masahiro; Zhao Tong; Ichijo, Noriaki

    2015-01-01

    In this study, wireless electrical resistance detector is developed as first step in order to develop electrical resistance tomography (ERT) that are attached wireless communication, and miniaturized. And the particle volume fraction measurement results appropriateness is qualitatively examined. The real-time particle volume fraction measurement is essential for centrifuges, because rotational velocity and supply should be controlled based on the results in order to obtain the effective separation, shorten process time and save energy. However, a technique for the particle volume fraction measurement in centrifuges has not existed yet. In other words, the real-time particle volume fraction measurement in centrifuges becomes innovative technologies. The experiment device reproduces centrifugation in two-phase using particle and salt solution as measuring object. The particle concentration is measured changing rotational velocity, supply and measurement section position. The measured concentration changes coincide with anticipated tendency of concentration changes. Therefore the particle volume fraction measurement results appropriateness are qualitatively indicated. (author)

  3. A Challenge to Improve High-Temperature Platinum Resistance Thermometer

    Science.gov (United States)

    Tanaka, Y.; Widiatmo, J. V.; Harada, K.; Kobayashi, T.; Yamazawa, K.

    2017-05-01

    High-temperature standard platinum resistance thermometers (HTSPRTs) are used to interpolate the international temperature scale of 1990 (ITS-90), especially for temperatures between the aluminum and the silver points. For this, long-term stability of the HTSPRT is essential. CHINO R800-3L type SPRT, which has a nominal resistance at the triple point of water (TPW) around 0.25 Ω , is the one developed earlier for the interpolation of the ITS-90 at this temperature range. Further development to this previous model has been carried out for the purpose of improving the thermal stability. The improvement was focused on reducing the effect coming from the difference in thermal expansion between platinum wire and the quartz frame on which the platinum wire is installed. New HTSPRTs were made by CHINO Corporation. Some series of tests were carried out at CHINO and at NMIJ. Initial tests after the HTSPRT fabrication were done at CHINO, where thermal cycles between 500°C and 980°C were applied to the HTSPRTs to see change in the resistances at the TPW (R_{TPW}) and at the gallium point (R_{Ga}). Repeated resistance measurements at the silver point (R_{Ag}) were performed after completing the thermal cycling test. Before and after every measurement at silver point, R_{TPW} was measured, while before and after every two silver point realization R_{Ga} were measured. After completing this test, the HTSPRTs were transported to NMIJ, where the same repeated measurements at the silver point were done at NMIJ. These were then repeated at CHINO and at NMIJ upon repeated transportation among the institutes, to evaluate some effect due to transportation. This paper reports the details of the above-mentioned tests, the results and the analysis.

  4. HIGH TEMPERATURE CORROSION RESISTANCE OF METALLIC MATERIALS IN HARSH CONDITIONS

    OpenAIRE

    Novello, Frederic; Dedry, Olivier; De Noose, Vincent; Lecomte-Beckers, Jacqueline

    2014-01-01

    Highly efficient energy recovery from renewable sources and from waste incineration causes new problems of corrosion at high temperature. A similar situation exists for new recycling processes and new energy storage units. These corrosions are generally considered to be caused by ashes or molten salts, the composition of which differs considerably from one plant to another. Therefore, for the assessment of corrosion-resistance of advanced materials, it is essential to precisely evaluate the c...

  5. Corrosion resistant coatings suitable for elevated temperature application

    Science.gov (United States)

    Chan, Kwai S [San Antonio, TX; Cheruvu, Narayana Sastry [San Antonio, TX; Liang, Wuwei [Austin, TX

    2012-07-31

    The present invention relates to corrosion resistance coatings suitable for elevated temperature applications, which employ compositions of iron (Fe), chromium (Cr), nickel (Ni) and/or aluminum (Al). The compositions may be configured to regulate the diffusion of metals between a coating and a substrate, which may then influence coating performance, via the formation of an inter-diffusion barrier layer. The inter-diffusion barrier layer may comprise a face-centered cubic phase.

  6. Noise and optimum filtering in spectrometers with semiconductor detectors operating at elevated temperature

    International Nuclear Information System (INIS)

    Dabrowski, W.; Korbel, K.

    1983-01-01

    The importance of the excess noise in the semiconductor detectors operating at the elevated temperature is discussed. Under the assumption of a conventional CR-RC type filtration the variancy of the noise output is determined. The new term ''second noise-corner time constant'' was proposed. The expression for relative signal-to-noise ratio as the dependence on the noise as well as circuits time constants was derived. It was also presented in a graphical form. 12 refs., 6 figs. (author)

  7. Performance studies of resistive Micromegas detectors for the upgrade of the ATLAS Muon Spectrometer

    CERN Document Server

    Ntekas, Konstantinos; The ATLAS collaboration

    2015-01-01

    Resistive Micromegas (Micro MEsh Gaseous Structure) detectors have proven along the years to be a reliable high rate capable detector technology characterised by an excellent spatial resolution. The ATLAS collaboration at LHC has chosen the resistive Micromegas technology (mainly for tracking), along with the small-strip Thin Gap Chambers (sTGC, mainly for triggering), for the high luminosity upgrade of the inner muon station in the high-rapidity region, the so called New Small Wheel (NSW) upgrade project. The NSW requires fully efficient Micromegas chambers with spatial resolution better than $100\\,\\mu\\mathrm{m}$ independent of the track incidence angle and the magnetic field ($B<0.3\\,\\mathrm{T}$), with a rate capability up to $\\sim10\\,\\mathrm{kHz/cm^2}$. Moreover, together with the precise tracking capability the Micromegas chambers should be able to provide a trigger signal, complementary to the sTGC, thus a decent timing resolution is required. Several tests have been performed on small ($10\\times10\\,\\...

  8. The Resistive-Plate WELL with Argon mixtures - a robust gaseous radiation detector

    CERN Document Server

    Moleri, Luca; Arazi, Lior; Rocha Azevedo, Carlos Davide; Oliveri, Eraldo; Pitt, Michael; Schaarschmidt, Jana; Shaked-Renous, Dan; Marques Ferreira dos Santos, Joaquim; Veloso, Joao Filipe Calapez de Albuquerque; Breskin, Amos; Bressler, Shikma

    2017-01-01

    A thin single-element THGEM-based, Resistive-Plate WELL (RPWELL) detector was operated with 150 GeV/c muon and pion beams in Ne/(5%CH$_4$), Ar/(5%CH$_4$) and Ar/(7%CO$_2$); signals were recorded with 1 cm$^2$ square pads and SRS/APV25 electronics. Detection efficiency values greater than 98% were reached in all the gas mixtures, at average pad multiplicity of 1.2. The use of the 10$^9${\\Omega}cm resistive plate resulted in a completely discharge-free operation also in intense pion beams. The efficiency remained essentially constant at 98-99% up to fluxes of $\\sim$10$^4$Hz/cm$^2$, dropping by a few % when approaching 10$^5$ Hz/cm$^2$. These results pave the way towards cost-effective, robust, efficient, large-scale detectors for a variety of applications in future particle, astro-particle and applied fields. A potential target application is digital hadron calorimetry.

  9. Prototyping and performance study of a single crystal diamond detector for operation at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Amit; Kumar, Arvind; Topkar, Anita, E-mail: anita@barc.gov.in; Das, D.

    2017-06-21

    Prototype single crystal diamond detectors with different types of metallization and post metallization treatment were fabricated for the applications requiring fast neutron measurements in the Indian Test Blanket Module (TBM) at the International Thermonuclear Experimental Reactor (ITER) Experiment. The detectors were characterized by leakage current measurements to ascertain that the leakage currents are low and breakdown voltages are higher than the voltage required for full charge collection. The detector response to charged particles was evaluated using a {sup 238+239} Pu dual energy alpha source. The detectors showed an energy resolution of about 2% at 5.5 MeV. In order to study their suitability for the operation at higher temperatures, leakage current variation and alpha response were studied up to 300 °C. At 300 °C, peaks corresponding to 5.156 MeV and 5.499 MeV alphas could be separated and there was no significant degradation of energy resolution. Finally, the detector response to fast neutrons was evaluated using a Deuterium-Tritium (D-T) neutron generator. The observed spectrum showed peaks corresponding to various channels of n-C interactions with a clear isolated peak corresponding to ~8.5 MeV alphas. The detectors also showed high sensitivity of 3.4×10{sup −2} cps/n/(cm{sup 2} s)–4.5×10{sup −2} cps/n/(cm{sup 2} s) and excellent linearity of response in terms of count rate at different neutron flux in the observed range of 3.2×10{sup 5} n/(cm{sup 2} s) to 2.0×10{sup 6} n/(cm{sup 2} s).

  10. Prototyping and performance study of a single crystal diamond detector for operation at high temperatures

    Science.gov (United States)

    Kumar, Amit; Kumar, Arvind; Topkar, Anita; Das, D.

    2017-06-01

    Prototype single crystal diamond detectors with different types of metallization and post metallization treatment were fabricated for the applications requiring fast neutron measurements in the Indian Test Blanket Module (TBM) at the International Thermonuclear Experimental Reactor (ITER) Experiment. The detectors were characterized by leakage current measurements to ascertain that the leakage currents are low and breakdown voltages are higher than the voltage required for full charge collection. The detector response to charged particles was evaluated using a 238+239 Pu dual energy alpha source. The detectors showed an energy resolution of about 2% at 5.5 MeV. In order to study their suitability for the operation at higher temperatures, leakage current variation and alpha response were studied up to 300 °C. At 300 °C, peaks corresponding to 5.156 MeV and 5.499 MeV alphas could be separated and there was no significant degradation of energy resolution. Finally, the detector response to fast neutrons was evaluated using a Deuterium-Tritium (D-T) neutron generator. The observed spectrum showed peaks corresponding to various channels of n-C interactions with a clear isolated peak corresponding to 8.5 MeV alphas. The detectors also showed high sensitivity of 3.4×10-2 cps/n/(cm2 s)-4.5×10-2 cps/n/(cm2 s) and excellent linearity of response in terms of count rate at different neutron flux in the observed range of 3.2×105 n/(cm2 s) to 2.0×106 n/(cm2 s).

  11. Radiation detector arrangements and methods

    International Nuclear Information System (INIS)

    Jackson, J.

    1989-01-01

    The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

  12. Low-resistivity photon-transparent window attached to photo-sensitive silicon detector

    International Nuclear Information System (INIS)

    Holland, S.E.

    2000-01-01

    The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer or chip. The window is applied to photon sensitive silicon devices such as photodiodes, charge-coupled devices, active pixel sensors, low-energy x-ray sensors and other radiation detectors. The silicon window is applied to the back side of a photosensitive silicon wafer or chip so that photons can illuminate the device from the backside without interference from the circuit printed on the frontside. A voltage sufficient to fully deplete the high-resistivity photosensitive silicon volume of charge carriers is applied between the low-resistivity back window and the front, patterned, side of the device. This allows photon-induced charge created at the backside to reach the front side of the device and to be processed by any circuitry attached to the front side. Using the inventive combination, the photon sensitive silicon layer does not need to be thinned beyond standard fabrication methods in order to achieve full charge-depletion in the silicon volume. In one embodiment, the inventive backside window is applied to high resistivity silicon to allow backside illumination while maintaining charge isolation in CCD pixels

  13. High temperature resistive phase transition in A15 high temperature superconductors

    International Nuclear Information System (INIS)

    Chu, C.W.; Huang, C.Y.; Schmidt, P.H.; Sugawara, K.

    1976-01-01

    Resistive measurements were made on A15 high temperature superconductors. Anomalies indicative of a phase transition were observed at 433 0 K in a single crystal Nb 3 Sn and at 485 0 K in an unbacked Nb 3 Ge sputtered thin film. Results are compared with the high temperature transmission electron diffraction studies of Nb 3 Ge films by Schmidt et al. A possible instability in the electron energy spectrum is discussed

  14. CeBr3 as a room-temperature, high-resolution gamma-ray detector

    International Nuclear Information System (INIS)

    Guss, Paul; Reed, Michael; Yuan Ding; Reed, Alexis; Mukhopadhyay, Sanjoy

    2009-01-01

    Cerium bromide (CeBr 3 ) has become a material of interest in the race for high-resolution gamma-ray spectroscopy at room temperature. This investigation quantified the potential of CeBr 3 as a room-temperature, high-resolution gamma-ray detector. The performance of CeBr 3 crystals was compared to other scintillation crystals of similar dimensions and detection environments. Comparison of self-activity of CeBr 3 to cerium-doped lanthanum tribromide (LaBr 3 :Ce) was performed. Energy resolution and relative intrinsic efficiency were measured and are presented.

  15. Temperature dependence of collapse of quantized hall resistance

    International Nuclear Information System (INIS)

    Tanaka, Hiroyasu; Kawashima, Hironori; Iizuka, Hisamitsu; Fukuda, Hideaki; Kawaji, Shinji

    2006-01-01

    Similarity is observed in the deviation of Hall resistance from the quantized value with the increase in the source-drain current I SD in our butterfly-type Hall bars and in the Hall bars used by Jeanneret et al., while changes in the diagonal resistivity ρ xx with I SD are significantly different between these Hall bars. The temperature dependence of the critical Hall electric field F cr (T) for the collapse of R H (4) measured in these Hall bars is approximated using F cr (T) = F cr (0)(1 - (T/T cr ) 2 ). Here, the critical Hall electric field at zero temperature depends on the magnetic field B as F cr (0) ∝ B 3/2 . Theoretical considerations are given on F cr (T) on the basis of a temperature-dependent mobility edge model and a schema of temperature-dependent inter-Landau level tunneling probability arising from the Fermi distribution function. The former does not fit in with the I SD dependence of activation energy in ρ xx . (author)

  16. A gas microstrip detector for X-ray imaging with readout of the anode by resistive division

    CERN Document Server

    Bateman, J E; Lodge, A B; Stephenson, R; Mutikainen, R; Suni, I; Morse, J

    2002-01-01

    The results are presented of a development programme aimed at the validation of the key concepts and technologies for the construction of a two-dimensional X-ray detector based on gas microstrip detector technology using resistive division along the anode to achieve the second dimension. A prototype detector and its associated electronic readout system have been developed which demonstrate the capability of a spatial resolution (standard deviation) of approximately ((1)/(1000)) of the working aperture combined with readout rates of up to 400 kHz per anode. Test results and a description of the position sensing circuitry are given.

  17. Novel low-temperature processing of low noise SDDs with on-detector electronics

    International Nuclear Information System (INIS)

    Sonsky, J.; Koornneef, R.; Huizenga, J.; Hollander, R.W.; Nanver, L.K.; Scholtes, T.; Roozeboom, F.; Eijk, C.W.E. van

    2004-01-01

    We have developed a fabrication process (SMART700 deg. process) for monolithic integration of p-channel JFETs and silicon detectors. Processing steps of the SMART700 deg. do not exceed 700 deg. C. The integrated p-JFET has a minimum gate length of 1 μm. A relatively large width can be chosen to achieve a reasonable transconductance, while the JFET capacitance still matches the small capacitance of a detector. The feedback capacitor was also realized on-chip as a double-metal capacitor. In this paper we describe DC and noise characteristics of a silicon drift detector (SDD) with a p-JFET (W/L=100/1) and a feedback capacitor integrated in the read-out anode (smart-SDD). The device has a transconductance of 1-3 mS, a top gate capacitance of ∼140 fF and a low leakage current ( 2 at room temperature). The smart-SDD with an active area of 3.8 mm 2 has reached an energy resolution of ∼50 rms electrons at a temperature of 213 K. This relatively poor energy resolution is due to generation-recombination noise caused by defects produced by a deep n-implantation. Rapid thermal annealing (RTA) and excimer laser annealing (ELA) techniques are experimented to remove the implantation damage. The noise of p-JFETs annealed with RTA and ELA is also presented

  18. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    Energy Technology Data Exchange (ETDEWEB)

    Guerra, P; Santos, A [Centro de Investigacion Biomedica de Bioningenieria, Biomateriales y Nanomedicina, CEEI-Modulo 3, C/ Maria de Luna, 11, 50018 Zaragoza (United States); Darambara, D G, E-mail: pguerra@ciber-bbn.e [Joint Department of Physics, Royal Marsden NHS Foundation Trust and Institute of Cancer Research, Fulham Road, London SW3 6JJ (United Kingdom)

    2009-09-07

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm{sup 3} CdZnTe pixellated detector.

  19. An investigation of performance characteristics of a pixellated room-temperature semiconductor detector for medical imaging

    International Nuclear Information System (INIS)

    Guerra, P; Santos, A; Darambara, D G

    2009-01-01

    The operation of any semiconductor detector depends on the movement of the charge carriers, which are created within the material when radiation passes through, as a result of energy deposition. The carrier movement in the bulk semiconductor induces charges on the metal electrodes, and therefore a current on the electrodes and the external circuit. The induced charge strongly depends on the material transport parameters as well as the geometrical dimensions of a pixellated semiconductor detector. This work focuses on the performance optimization in terms of energy resolution, detection efficiency and intrinsic spatial resolution of a room-temperature semiconductor pixellated detector based on CdTe/CdZnTe. It analyses and inter-relates these performance figures for various dimensions of CdTe and CdZnTe detectors and for an energy range spanning from x-ray (25 keV) to PET (511 keV) imaging. Monte Carlo simulations, which integrate a detailed and accurate noise model, are carried out to investigate several CdTe/CdZnTe configurations and to determine possible design specifications. Under the considered conditions, the simulations demonstrate the superiority of the CdZnTe over the CdTe in terms of energy resolution and sensitivity in the photopeak. Further, according to the results, the spatial resolution is maximized at high energies and the energy resolution at low energies, while a reasonable detection efficiency is achieved at high energies, with a 1 x 1 x 6 mm 3 CdZnTe pixellated detector.

  20. Stability of High Temperature Standard Platinum Resistance Thermometers at High Temperatures

    Directory of Open Access Journals (Sweden)

    Y. A. ABDELAZIZ

    2010-05-01

    Full Text Available An investigation of the stability of high temperature standard platinum resistance thermometers HTSPRTs has been carried out for two different designs thermometers (with nominal resistance 0.25 Ω and 2.5 Ω from two different suppliers. The thermometers were heated for more than 160 hours at temperatures above 960 0C using a vertical furnace with a ceramic block. A study was made of the influence of the heat treatment on the stability of the resistance at the triple point of water, and on the relative resistance W(Ga at the melting point of gallium. The thermometers showed a correlation between the drift note and the values of W(Ga. It was found also that the HTSPRT which has a sensor with strip shaped support and low nominal resistance is more stable than the HTSPRT which has a sensor in the form of a coil wound on silica cross. The 0.25 Ω thermometer has better stability @ 7x10-6 0C (at TPW after 40 hour. Factors affecting the stability and accuracy of HTSPRT also will be discussed.

  1. Ageing studies of resistive Micromegas detectors for the HL-LHC

    CERN Document Server

    Galán, J; Ferrer-Ribas, E; Giganon, A; Giomataris, I; Herlant, S; Jeanneau, F; Peyaud, A; Schune, Ph; Alexopoulos, T; Byszewski, M; Iakovidis, G; Iengo, P; Ntekas, K; Leontsinis, S; de Oliveira, R; Tsipolitis, Y; Wotschack, J

    2013-01-01

    Resistive-anode Micromegas detectors are in development since several years, in an effort to solve the problem of sparks when working in high flux and high radiations environment like in the HL-LHC (ten times the luminosity of the LHC). They have been chosen as one of the technologies that will be part of the ATLAS New Small Wheel project (forward muon system). An ageing study is mandatory to assess their capabilities to handle the HL-LHC environment on a long-term period. A prototype has been exposed to several types of irradiations (X-rays, cold neutrons, 60 Co gammas) up to an equivalent HL-LHC time of more than five years without showing any degradation of the performances in terms of gain and energy resolution. Beam test studies took place in October 2012 to assess the tracking performances (efficiency, spatial resolution,...). Results of ageing studies and beam test performances are reported in this paper.

  2. Properties of CMOS devices and circuits fabricated on high-resistivity, detector-grade silicon

    International Nuclear Information System (INIS)

    Holland, S.

    1991-11-01

    A CMOS process that is compatible with silicon p-i-n radiation detectors has been developed and characterized. A total of twelve mask layers are used in the process. The NMOS device is formed in a retrograde well while the PMOS device is fabricated directly in the high-resistivity silicon. Isolation characteristics are similar to a standard foundary CMOS process. Circuit performance using 3 μm design rules has been evaluated. The measured propagation delay and power-delay product for a 51-stage ring oscillator was 1.5 ns and 43 fJ, respectively. Measurements on a simple cascode amplifier results in a gain-bandwidth product of 200 MHz at a bias current of 15 μA. The input-referred noise of the cascode amplifier is 20 nV/√Hz at 1 MHz

  3. Testing of multigap Resistive Plate Chambers for Electron Ion Collider Detector Development

    Science.gov (United States)

    Hamilton, Hannah; Phenix Collaboration

    2015-10-01

    Despite decades of research on the subject, some details of the spin structure of the nucleon continues to be unknown. To improve our knowledge of the nucleon spin structure, the construction of a new collider is needed. This is one of the primary goals of the proposed Electron Ion Collider (EIC). Planned EIC spectrometers will require good particle identification. This can be provided by time of flight (TOF) detectors with excellent timing resolutions of 10 ps. A potential TOF detector that could meet this requirement is a glass multigap resistive plate chamber (mRPC). These mRPCs can provide excellent timing resolution at a low cost. The current glass mRPC prototypes have a total of twenty 0.1 mm thick gas gaps. In order to test the feasibility of this design, a cosmic test stand was assembled. This stand used the coincidence of scintillators as a trigger, and contains fast electronics. The construction, the method of testing, and the test results of the mRPCs will be presented.

  4. Performance of Multiplexed XY Resistive Micromegas detectors in a high intensity beam

    Science.gov (United States)

    Banerjee, D.; Burtsev, V.; Chumakov, A.; Cooke, D.; Depero, E.; Dermenev, A. V.; Donskov, S. V.; Dubinin, F.; Dusaev, R. R.; Emmenegger, S.; Fabich, A.; Frolov, V. N.; Gardikiotis, A.; Gninenko, S. N.; Hösgen, M.; Karneyeu, A. E.; Ketzer, B.; Kirsanov, M. M.; Konorov, I. V.; Kramarenko, V. A.; Kuleshov, S. V.; Levchenko, E.; Lyubovitskij, V. E.; Lysan, V.; Mamon, S.; Matveev, V. A.; Mikhailov, Yu. V.; Myalkovskiy, V. V.; Peshekhonov, V. D.; Peshekhonov, D. V.; Polyakov, V. A.; Radics, B.; Rubbia, A.; Samoylenko, V. D.; Tikhomirov, V. O.; Tlisov, D. A.; Toropin, A. N.; Vasilishin, B.; Arenas, G. Vasquez; Ulloa, P.; Crivelli, P.

    2018-02-01

    We present the performance of multiplexed XY resistive Micromegas detectors tested in the CERN SPS 100 GeV/c electron beam at intensities up to 3 . 3 × 105e- /(s ṡcm2) . So far, all studies with multiplexed Micromegas have only been reported for tests with radioactive sources and cosmic rays. The use of multiplexed modules in high intensity environments was not explored due to the effect of ambiguities in the reconstruction of the hit point caused by the multiplexing feature. For the specific mapping and beam intensities analyzed in this work with a multiplexing factor of five, more than 50% level of ambiguity is introduced due to particle pile-up as well as fake clusters due to the mapping feature. Our results prove that by using the additional information of cluster size and integrated charge from the signal clusters induced on the XY strips, the ambiguities can be reduced to a level below 2%. The tested detectors are used in the CERN NA64 experiment for tracking the incoming particles bending in a magnetic field in order to reconstruct their momentum. The average hit detection efficiency of each module was found to be ∼96% at the highest beam intensities. By using four modules a tracking resolution of 1.1% was obtained with ∼85% combined tracking efficiency.

  5. Development of Creep-Resistant and Oxidation-Resistant Austenitic Stainless Steels for High Temperature Applications

    Science.gov (United States)

    Maziasz, Philip J.

    2018-01-01

    Austenitic stainless steels are cost-effective materials for high-temperature applications if they have the oxidation and creep resistance to withstand prolonged exposure at such conditions. Since 1990, Oak Ridge National Laboratory (ORNL) has developed advanced austenitic stainless steels with creep resistance comparable to Ni-based superalloy 617 at 800-900°C based on specially designed "engineered microstructures" utilizing a microstructure/composition database derived from about 20 years of radiation effect data on steels. The wrought high temperature-ultrafine precipitate strengthened (HT-UPS) steels with outstanding creep resistance at 700-800°C were developed for supercritical boiler and superheater tubing for fossil power plants in the early 1990s, the cast CF8C-Plus steels were developed in 1999-2001 for land-based gas turbine casing and diesel engine exhaust manifold and turbocharger applications at 700-900°C, and, in 2015-2017, new Al-modified cast stainless steels with oxidation and creep resistance capabilities up to 950-1000°C were developed for automotive exhaust manifold and turbocharger applications. This article reviews and summarizes their development and their properties and applications.

  6. NEET Enhanced Micro Pocket Fission Detector for High Temperature Reactors - FY15 Status Report

    Energy Technology Data Exchange (ETDEWEB)

    Unruh, Troy [Idaho National Lab. (INL), Idaho Falls, ID (United States); McGregor, Douglas [Idaho National Lab. (INL), Idaho Falls, ID (United States); Ugorowski, Phil [Idaho National Lab. (INL), Idaho Falls, ID (United States); Reichenberger, Michael [Idaho National Lab. (INL), Idaho Falls, ID (United States); Ito, Takashi [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2015-09-01

    A new project, that is a collaboration between the Idaho National Laboratory (INL), the Kansas State University (KSU), and the French Atomic Energy Agency, Commissariat à l'Énergie Atomique et aux Energies Alternatives, (CEA), has been initiated by the Nuclear Energy Enabling Technologies (NEET) Advanced Sensors and Instrumentation (ASI) program for developing and testing High Temperature Micro-Pocket Fission Detectors (HT MPFD), which are compact fission chambers capable of simultaneously measuring thermal neutron flux, fast neutron flux and temperature within a single package for temperatures up to 800 °C. The MPFD technology utilizes a small, multi-purpose, robust, in-core parallel plate fission chamber and thermocouple. As discussed within this report, the small size, variable sensitivity, and increased accuracy of the MPFD technology represent a revolutionary improvement over current methods used to support irradiations in US Material Test Reactors (MTRs). Previous research conducted through NEET ASI1-3 has shown that the MPFD technology could be made robust and was successfully tested in a reactor core. This new project will further the MPFD technology for higher temperature regimes and other reactor applications by developing a HT MPFD suitable for temperatures up to 800 °C. This report summarizes the research progress for year one of this three year project. Highlights from research accomplishments include: A joint collaboration was initiated between INL, KSU, and CEA. Note that CEA is participating at their own expense because of interest in this unique new sensor. An updated HT MPFD design was developed. New high temperature-compatible materials for HT MPFD construction were procured. Construction methods to support the new design were evaluated at INL. Laboratory evaluations of HT MPFD were initiated. Electrical contact and fissile material plating has been performed at KSU. Updated detector electronics are undergoing evaluations at KSU. A

  7. High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

    Science.gov (United States)

    Hou, H. W.; Liu, Z.; Teng, J. H.; Palacios, T.; Chua, S. J.

    2017-04-01

    In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.

  8. Proliferation resistance assessment of high temperature gas reactors

    Energy Technology Data Exchange (ETDEWEB)

    Chikamatsu N, M. A. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Santa Fe, Av. Carlos Lazo No. 100, Santa Fe, 01389 Mexico D. F. (Mexico); Puente E, F., E-mail: midori.chika@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2014-10-15

    The Generation IV International Forum has established different objectives for the new generation of reactors to accomplish. These objectives are focused on sustain ability, safety, economics and proliferation resistance. This paper is focused on how the proliferation resistance of the High Temperature Gas Reactors (HTGR) is assessed and the advantages that these reactors present currently. In this paper, the focus will be on explaining why such reactors, HTGR, can achieve the goals established by the GIF and can present a viable option in terms of proliferation resistance, which is an issue of great importance in the field of nuclear energy generation. The reason why the HTGR are being targeted in this writing is that these reactors are versatile, and present different options from modular reactors to reactors with the same size as the ones that are being operated today. Besides their versatility, the HTGR has designed features that might improve on the overall sustain ability of the nuclear reactors. This is because the type of safety features and materials that are used open up options for industrial processes to be carried out; cogeneration for instance. There is a small section that mentions how HTGR s are being developed in the international sector in order to present the current world view in this type of technology and the further developments that are being sought. For the proliferation resistance section, the focus is on both the intrinsic and the extrinsic features of the nuclear systems. The paper presents a comparison between the features of Light Water Reactors (LWR) and the HTGR in order to be able to properly compare the most used technology today and one that is gaining international interest. (Author)

  9. Proliferation resistance assessment of high temperature gas reactors

    International Nuclear Information System (INIS)

    Chikamatsu N, M. A.; Puente E, F.

    2014-10-01

    The Generation IV International Forum has established different objectives for the new generation of reactors to accomplish. These objectives are focused on sustain ability, safety, economics and proliferation resistance. This paper is focused on how the proliferation resistance of the High Temperature Gas Reactors (HTGR) is assessed and the advantages that these reactors present currently. In this paper, the focus will be on explaining why such reactors, HTGR, can achieve the goals established by the GIF and can present a viable option in terms of proliferation resistance, which is an issue of great importance in the field of nuclear energy generation. The reason why the HTGR are being targeted in this writing is that these reactors are versatile, and present different options from modular reactors to reactors with the same size as the ones that are being operated today. Besides their versatility, the HTGR has designed features that might improve on the overall sustain ability of the nuclear reactors. This is because the type of safety features and materials that are used open up options for industrial processes to be carried out; cogeneration for instance. There is a small section that mentions how HTGR s are being developed in the international sector in order to present the current world view in this type of technology and the further developments that are being sought. For the proliferation resistance section, the focus is on both the intrinsic and the extrinsic features of the nuclear systems. The paper presents a comparison between the features of Light Water Reactors (LWR) and the HTGR in order to be able to properly compare the most used technology today and one that is gaining international interest. (Author)

  10. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    Energy Technology Data Exchange (ETDEWEB)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun [Korea Univ., Seoul (Korea, Republic of)

    2008-11-15

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS.

  11. Ultrafast photon number resolving detector with a temperature stabilized si multi pixel photon counter

    International Nuclear Information System (INIS)

    Song, Minsoo; Hong, Eugene; Won, Eunil; Yoon, Tai Hyun

    2008-01-01

    Quantum information science has been rapidly progressed and matured and matured thanks to the recent developments of the single photon detection technologies. Single photon detectors such as a Si avalanche photo diode(APD)in the infrared, an InGaAs/InP APD in the telecommunication band, and a super conducting transient edge sensor(TES)in the broad region of the spectrum have been widely used. Single photon detectors, however, operating at the ultraviolet to visible (370nm∼800nm)regions has not been actively investigated partly due to the lack of single photon and/or entangled photon sources and the lack of solid state single photon detectors. In this paper, we investigate the single photon detection characteristics of a Si multi pixel photon counter(MPPC), which has a high spectral responsivity between 300nm to 800nm, as a photon number resolving solid state detector. Figure 1 shows the schematic diagram of the single photon detection set up at 399nm by using a temperature stabilized Si MPPC. The output beam of the laser being properly attenuated is directed to the MPPC module, at which fixed number of photo electrons corresponding to incident individual photon are generated at Geiger mode of the Si APD pixels. The detected photo current is converted into a digital signal by using a fast analog to digital converter and a digital oscilloscope stores the time sequence of the photo currents. Figure 2 shows the accumulated charges collected by MPPC at∼10.deg.C showing a clear single photon and two photons peaks, respectively, separated by ∼5 sigma of the coincidence counts at the two output ports of a Mach Zender interferometer as a function of optical path length difference. The research was supported by Seoul R and BD program(NT070127)and by the KRISS

  12. Temperature dependence of the electrical resistivity of amorphous Co80-xErxB20 alloys

    International Nuclear Information System (INIS)

    Touraghe, O.; Khatami, M.; Menny, A.; Lassri, H.; Nouneh, K.

    2008-01-01

    The temperature dependence of the electrical resistivity of amorphous Co 80-x Er x B 20 alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T min . In addition, the resistivity shows quadratic temperature behavior in the interval T min < T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity α shows a change in structural short range occurring in the composition range 8-9 at%

  13. Silicon drift detectors for high resolution room temperature X-ray spectroscopy

    International Nuclear Information System (INIS)

    Lechner, P.; Eckbauer, S.; Hauff, D.; Strueder, L.; Gatti, E.; Longoni, A.; Sampietro, M.

    1996-01-01

    New cylindrical silicon drift detectors have been designed, fabricated and tested. They comprise an integrated on-chip amplifier system with continuous reset, on-chip voltage divider, electron accumulation layer stabilizer, large area, homogeneous radiation entrance window and a drain for surface generated leakage current. The test of the 3.5 mm 2 large individual devices, which have also been grouped together to form a sensitive area up to 21 mm 2 have shown the following spectroscopic results: at room temperature (300 K) the devices have shown a full width at half maximum at the Mn Kα line of a radioactive 55 Fe source of 225 eV with shaping times of 250 to 500 ns. At -20 C the resolution improves to 152 eV at 2 μs Gaussian shaping. At temperatures below 200 K the energy resolution is below 140 eV. With the implementation of a digital filtering system the resolution approaches 130 eV. The system was operated with count rates up to 800 000 counts per second and per readout node, still conserving the spectroscopic qualities of the detector system. (orig.)

  14. Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures

    CERN Document Server

    Moscatelli, F; MacEvoy, B; Hall, G; Passeri, D; Petasecca, M; Pignatel, Giogrio Umberto

    2004-01-01

    Radiation hardness is a critical design concern for present and future silicon detectors in high energy physics. Tracking systems at the CERN Large Hadron Collider (LHC) are expected to operate for ten years and to receive fast hadron fluences equivalent to 10/sup 15/cm /sup -2/ 1-MeV neutrons. Recently, low temperature operating conditions have been suggested as a means of suppressing the negative effects of radiation damage on detector charge collection properties. To investigate this effect, simulations have been carried out using the ISE-TCAD DESSIS device simulator. The so-called "three-level model" has been used. A comprehensive analysis of the influence of the V/sub 2/, C/sub i/O/sub i/ and V/sub 2/O capture cross sections on the effective doping concentration (N/sub eff/) as a function of temperature and fluence has been carried out. The capture cross sections have been varied in the range 10/sup -18/-10/sup -12/ cm/sup 2/. The simulated results are compared with charge collection spectra obtained wit...

  15. BiI{sub 3} single crystal for room-temperature gamma ray detectors

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T., E-mail: saito.tatsuya125@canon.co.jp [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Iwasaki, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan); Kurosawa, S.; Yoshikawa, A. [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Den, T. [Frontier Research Center, Canon Inc., 3-30-2, Shimomaruko, Ohta-ku, Tokyo 146-8501 (Japan)

    2016-01-11

    BiI{sub 3} single crystals were grown by the physical vapor transport method. The repeated sublimation of the starting material reduced impurities in the BiI{sub 3} single crystal to sub-ppm levels. The detector was fabricated by depositing Au electrodes on both surfaces of the 100-μm-thick BiI{sub 3} single crystal platelet. The resistivity of the BiI{sub 3} single crystal was increased by post-annealing in an iodine atmosphere (ρ=1.6×10{sup 11} Ω cm). Pulse height spectroscopy measurements showed clear peaks in the energy spectrum of alpha particles or gamma rays. It was estimated that the mobility-lifetime product was μ{sub e}τ{sub e}=3.4–8.5×10{sup −6} cm{sup 2}/V and the electron–hole pair creation energy was 5.8 eV. Our results show that BiI{sub 3} single crystals are promising candidates for detectors used in radiographic imaging or gamma ray spectroscopy.

  16. Conceptual design for muon detectors using resistive plastic tubes. Final technical report

    International Nuclear Information System (INIS)

    Border, P.; Courant, H.; Heller, K.; Jones, A.; Lin, J.; Maxam, D.; Ruddick, K.

    1998-01-01

    Reliable low cost detectors which can be built in quantity require a simple design consisting of as few separate pieces as possible using inexpensive materials. For example, ordinary insulating plastics with good structural strength, such as polyethylene or polystyrene, have about 1/3 the cost of aluminum per unit weight. Since plastic is also about 1/3 the density of aluminum, the material cost for a drift tube would be reduced by an order of magnitude. This substitution of plastic for aluminum alone would save the muon system for the SDC more than $2M. Additional savings of greater magnitude can be expected since an entire drift tube, including a field shaping electrode structure, can be manufactured as a single piece by the technique of co-extrusion. A symmetric design with all walls far from the wire will also eliminate critical tolerances in the relative position of the electrodes with respect to the wire. Furthermore, module assembly and mounting costs will surely be reduced if the muon detectors were light weight and, as far as possible, had the same shape and size. With the 8 cm diameter plastic tube of the design, the electric drift field is nearly uniform as shown. This field is determined by a simple symmetric electrode structure, so that the necessary drift/position relationship can be achieved without precisely controlling the position of the electrode structure with respect to the wire. If the positioning of the electrode structure relative to the wire is not a critical dimension, the structural support for the tube need not be maintained to a high tolerance reducing the cost of the structure. Using a resistive plastic to shape the potential gives a simple electrode structure that will require a minimum number of electronic connections. The basic element of this design is the cylindrical plastic drift tube constructed from co-extruded plastics of different conductivity

  17. Resistive current limiter with high-temperature superconductors. Final report

    International Nuclear Information System (INIS)

    Schubert, M.

    1995-12-01

    Fundamental results of the possibility of using high temperature superconductors (HTSC) in resistive fault current limiters are discussed. Measurement of the homogeneity of BSCCO-powder-in-tube materials were made. In addition, investigations of the transition from superconducting to normalconducting state under AC-current conditions were carried out. Based on these results, simulations of HTSC-materials on ceramic substrate were made and recent results are presented. Important results of the investigations are: 1. Current-limiting without external trigger only possible when the critical current density of HTSC exceeds 10 4 A/cm 2 . 2. Inhomogeneities sometimes cause problems with local destruction. This can be solved by parallel-elements or external trigger. 3. Fast current-limiting causes overvoltages which can be reduced by using parallel-elements. (orig.) [de

  18. Radiation stability of low-temperature resistance thermometers

    International Nuclear Information System (INIS)

    Neklyudov, I.M.; Petrusenko, Yu.T.; Sleptsov, A.N.; Logvinenko, S.P.; Mikhina, G.F.; Rossoshanskij, O.A.

    1989-01-01

    The effect of low temperature (∼ 5 and 11 K) irradiation with E=30 MeV electrons and the subsequent annealing at 180 and 300 K on gauge dependences R(T) of resistance thermometers (RT) on the basis of p-GaAs, Ni and In is investigated. For GaAs-RT the dependence of electroresistance R(4.2 K) on the irradiation fluence is shown to be non monotonic. The annealing at 180 and 300 K does not restore GaAs-RT thermometric characteristics but it leads to their further degradation. The annealing of Ni and In irradiated RT's at T>180 K leads to total restoring of their electrophysical properties. 16 refs.; 5 figs.; 1 tab

  19. THE TEMPERATURE EFFECT IN SECONDARY COSMIC RAYS (MUONS) OBSERVED AT THE GROUND: ANALYSIS OF THE GLOBAL MUON DETECTOR NETWORK DATA

    Energy Technology Data Exchange (ETDEWEB)

    De Mendonça, R. R. S.; Braga, C. R.; Echer, E.; Dal Lago, A.; Rockenbach, M.; Schuch, N. J. [Space Geophysics Division, National Institute for Space Research, São José dos Campos, SP, 12227-010 (Brazil); Munakata, K.; Kato, C. [Physics Department, Shinshu University, Matsumoto, Nagano, 390-8621 (Japan); Kuwabara, T. [Graduate School of Science, Chiba University, Chiba City, Chiba 263-8522 (Japan); Kozai, M. [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (ISAS/JAXA), Sagamihara, Kanagawa 252-5210 (Japan); Al Jassar, H. K.; Sharma, M. M. [Physics Department, Kuwait University, Kuwait City, 13060 (Kuwait); Tokumaru, M. [Solar Terrestrial Environment Laboratory, Nagoya University, Nagoya, Aichi, 464-8601 (Japan); Duldig, M. L.; Humble, J. E. [School of Physical Sciences, University of Tasmania, Hobart, Tasmania, 7001 (Australia); Evenson, P. [Bartol Research Institute, Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Sabbah, I. [Department of Natural Sciences, College of Health Sciences, Public Authority for Applied Education and Training, Kuwait City, 72853 (Kuwait)

    2016-10-20

    The analysis of cosmic ray intensity variation seen by muon detectors at Earth's surface can help us to understand astrophysical, solar, interplanetary and geomagnetic phenomena. However, before comparing cosmic ray intensity variations with extraterrestrial phenomena, it is necessary to take into account atmospheric effects such as the temperature effect. In this work, we analyzed this effect on the Global Muon Detector Network (GMDN), which is composed of four ground-based detectors, two in the northern hemisphere and two in the southern hemisphere. In general, we found a higher temperature influence on detectors located in the northern hemisphere. Besides that, we noticed that the seasonal temperature variation observed at the ground and at the altitude of maximum muon production are in antiphase for all GMDN locations (low-latitude regions). In this way, contrary to what is expected in high-latitude regions, the ground muon intensity decrease occurring during summertime would be related to both parts of the temperature effect (the negative and the positive). We analyzed several methods to describe the temperature effect on cosmic ray intensity. We found that the mass weighted method is the one that best reproduces the seasonal cosmic ray variation observed by the GMDN detectors and allows the highest correlation with long-term variation of the cosmic ray intensity seen by neutron monitors.

  20. THE TEMPERATURE EFFECT IN SECONDARY COSMIC RAYS (MUONS) OBSERVED AT THE GROUND: ANALYSIS OF THE GLOBAL MUON DETECTOR NETWORK DATA

    International Nuclear Information System (INIS)

    De Mendonça, R. R. S.; Braga, C. R.; Echer, E.; Dal Lago, A.; Rockenbach, M.; Schuch, N. J.; Munakata, K.; Kato, C.; Kuwabara, T.; Kozai, M.; Al Jassar, H. K.; Sharma, M. M.; Tokumaru, M.; Duldig, M. L.; Humble, J. E.; Evenson, P.; Sabbah, I.

    2016-01-01

    The analysis of cosmic ray intensity variation seen by muon detectors at Earth's surface can help us to understand astrophysical, solar, interplanetary and geomagnetic phenomena. However, before comparing cosmic ray intensity variations with extraterrestrial phenomena, it is necessary to take into account atmospheric effects such as the temperature effect. In this work, we analyzed this effect on the Global Muon Detector Network (GMDN), which is composed of four ground-based detectors, two in the northern hemisphere and two in the southern hemisphere. In general, we found a higher temperature influence on detectors located in the northern hemisphere. Besides that, we noticed that the seasonal temperature variation observed at the ground and at the altitude of maximum muon production are in antiphase for all GMDN locations (low-latitude regions). In this way, contrary to what is expected in high-latitude regions, the ground muon intensity decrease occurring during summertime would be related to both parts of the temperature effect (the negative and the positive). We analyzed several methods to describe the temperature effect on cosmic ray intensity. We found that the mass weighted method is the one that best reproduces the seasonal cosmic ray variation observed by the GMDN detectors and allows the highest correlation with long-term variation of the cosmic ray intensity seen by neutron monitors.

  1. Temperature Effect in Secondary Cosmic Rays (MUONS) Observed at the Ground: Analysis of the Global MUON Detector Network Data

    Science.gov (United States)

    de Mendonça, R. R. S.; Braga, C. R.; Echer, E.; Dal Lago, A.; Munakata, K.; Kuwabara, T.; Kozai, M.; Kato, C.; Rockenbach, M.; Schuch, N. J.; Jassar, H. K. Al; Sharma, M. M.; Tokumaru, M.; Duldig, M. L.; Humble, J. E.; Evenson, P.; Sabbah, I.

    2016-10-01

    The analysis of cosmic ray intensity variation seen by muon detectors at Earth's surface can help us to understand astrophysical, solar, interplanetary and geomagnetic phenomena. However, before comparing cosmic ray intensity variations with extraterrestrial phenomena, it is necessary to take into account atmospheric effects such as the temperature effect. In this work, we analyzed this effect on the Global Muon Detector Network (GMDN), which is composed of four ground-based detectors, two in the northern hemisphere and two in the southern hemisphere. In general, we found a higher temperature influence on detectors located in the northern hemisphere. Besides that, we noticed that the seasonal temperature variation observed at the ground and at the altitude of maximum muon production are in antiphase for all GMDN locations (low-latitude regions). In this way, contrary to what is expected in high-latitude regions, the ground muon intensity decrease occurring during summertime would be related to both parts of the temperature effect (the negative and the positive). We analyzed several methods to describe the temperature effect on cosmic ray intensity. We found that the mass weighted method is the one that best reproduces the seasonal cosmic ray variation observed by the GMDN detectors and allows the highest correlation with long-term variation of the cosmic ray intensity seen by neutron monitors.

  2. The development of the room temperature LWIR HgCdTe detectors for free space optics communication systems

    Science.gov (United States)

    Martyniuk, Piotr; Gawron, Waldemar; Mikołajczyk, Janusz

    2017-10-01

    There are many room temperature applications to include free space optics (FSO) communication system combining quantum cascade lasers sources where HgCdTe long-wave (8-12 micrometer) infrared radiation (LWIR) detector reaching ultrafast response time 109 cmHz1/2/W. Since commercially available FSO could operate separately in SWIR, MWIR and LWIR range - the dual band detectors should be implemented into FSO. This paper shows theoretical performance of the dual band back-to-back MWIR and LWIR HgCdTe detector operating at 300 K pointing out the MWIR active layer influence on LWIR operating regime.

  3. Comparative study on the behavior of carbon resistance temperature sensors at low temperatures

    International Nuclear Information System (INIS)

    Balteanu, Ovidiu; Cristescu, Ioana; Retevoi, Carmen

    2000-01-01

    The paper presents the behavior of four carbon resistance sensors, which do not have a calibration curve in comparison with two calibrated sensors. To study this behavior, all these sensors were introduced into a column cooled by a hydrogen cryogenerator of Phillips type. For high accuracy measurements, a PC with a data acquisition board incorporated achieved the data processing. The experiment consists of three cooling-heating cycles that allow studying the time stability of the sensor characteristics. The experimental data were used to draw the R = f(T) and error curves for a single cooling-heating cycle. In addition, we found the polynomial regression for the sensors that do not have a calibration curve. In conclusion it results that the carbon resistance sensors have a higher accuracy at low temperature and time stability is very good. (authors)

  4. Temperature differences within the detector of the Robertson-Berger sunburn meter, model 500, compared to global radiation

    Science.gov (United States)

    Kjeldstad, Berit; Grandum, Oddbjorn

    1993-11-01

    The Robertson-Berger sunburn meter, model 500, has no temperature compensation, and the effect of temperature on the instrument response has been investigated and discussed in several reports. It is recommended to control the temperature of the detector or at least measure it. The temperature sensor is recommended to be positioned within the detector unit. We have measured the temperature at three different positions in the detector: At the edge of the green filter where the phosphor layer is placed; at the glass tube covering the cathode; and, finally, the air temperature inside the instrument. These measurements have been performed outdoors since July 1991, with corresponding measurements of the global and direct solar radiation. There was no difference between the temperature of the glasstube covering the cathode and the air inside the instrument, at any radiation level. However, there was a difference between the green filter and the two others. The difference is linearly dependent on the amount of global radiation. The temperature difference, (Delta) T (temperature between the green filter and the air inside the sensor), increased 0.8 degree(s)C when the global irradiation increased by 100 W/m2. At maximum global radiation in Trondheim (latitude 63.4 degree(s)N) (Delta) T was approximately 5 - 6 K when the global radiation was about 700 W/m2. This was valid for temperatures between 7 degree(s)C and 30 degree(s)C. Only clear days were evaluated.

  5. Fire Related Temperature Resistance of Fly Ash Based Geopolymer Mortar

    Directory of Open Access Journals (Sweden)

    Jeyalakshmi R.

    2017-01-01

    Full Text Available The study presented in this paper is on the effect of heat treatment on fly ash based geopolymer mortar synthesized from fly ash (Class F –Low lime using alkaline binary activator solution containing sodium hydroxide (18 M and sodium silicate solution (MR 2.0, cured at 80oC for 24 h. 7 days aged specimen heated at elevated temperature (200°C, 400°C, 600°C and 800°C for the sustained period of 2hrs. The TGA/DTA analysis and thermal conductivity measurement as per ASTM C113 were carried out besides the compressive strengths. The thermal stability of the fly ash mortar at elevated temperature was found to be high as reflected in the observed value of f800°C/f30°C being more than 1 and this ratio was raised to about 1.3 with the addition of 2% Zirconium di oxide (ZrO2. No visible cracks were found on the specimens with and without ZrO2 when 800°C was sustained for 4 hrs in smaller specimens of size: 50 mm diameter x 100 mm height and in also bigger size specimens: 22 cm × 11 cm × 7 cm specimens. TGA/DTA analysis of the geopolymer paste showed that the retention of mass was around 90%. The addition of ZrO2 improved thermal resistance. The micro structure of the matrix found to be intact even at elevated temperature that was evident from the FESEM studies.

  6. Iron-niobium-aluminum alloy having high-temperature corrosion resistance

    Science.gov (United States)

    Hsu, Huey S.

    1988-04-14

    An alloy for use in high temperature sulfur and oxygen containing environments, having aluminum for oxygen resistance, niobium for sulfur resistance and the balance iron, is discussed. 4 figs., 2 tabs.

  7. Cryogenic Tracking Detectors

    CERN Multimedia

    Luukka, P R; Tuominen, E M; Mikuz, M

    2002-01-01

    The recent advances in Si and diamond detector technology give hope of a simple solution to the radiation hardness problem for vertex trackers at the LHC. In particular, we have recently demonstrated that operating a heavily irradiated Si detector at liquid nitrogen (LN$_2$) temperature results in significant recovery of Charge Collection Efficiency (CCE). Among other potential benefits of operation at cryogenic temperatures are the use of large low-resistivity wafers, simple processing, higher and faster electrical signal because of higher mobility and drift velocity of carriers, and lower noise of the readout circuit. A substantial reduction in sensor cost could result The first goal of the approved extension of the RD39 program is to demonstrate that irradiation at low temperature in situ during operation does not affect the results obtained so far by cooling detectors which were irradiated at room temperature. In particular we shall concentrate on processes and materials that could significantly reduce th...

  8. Effect of some structural parameters on high-temperature crack resistance of tungsten

    International Nuclear Information System (INIS)

    Babak, A.V.; Uskov, E.I.

    1984-01-01

    The paper presents results of physicomechanical studied in high-temperature crack resistance of tungsten produced by powder metallurgy methods. It is shown that at high temperatures (>2000 deg C) a structure is formed in the material and fails at stresses independent of temperature. It is found that high-temperature tungsten crack resistance is affected neighter by changes in the effictive grain size, nor by appearance of grain-boundary microcraks in the material under high-temperature action

  9. Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

    Science.gov (United States)

    Stevons, C. E.; Jenke, P.; Briggs, M. S.

    2016-12-01

    Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

  10. Influence of Soil Temperature on Meloidogyne incognita Resistant and Susceptible Cotton, Gossypium hirsutum

    OpenAIRE

    Carter, William W.

    1982-01-01

    The degree of resistance by a cotton plant to Meloidogyne incognita is affected by soil temperature, particularly in moderately resistant cultivars, The total number of nematodes in the resistant and moderately resistant rools at 35 C was equal to, or greater than, the number in susceptible roots at 20, 25, or 30 C. A shift in numbers to developing and egg-bearing forms of nematodes in the susceptible cultivar as tentperature increased indicates development was affected by temperature rather ...

  11. Noise behaviour of semiinsulating GaAs particle detectors at various temperatures before and after irradiation

    International Nuclear Information System (INIS)

    Tenbusch, F.; Braunschweig, W.; Chu, Z.; Krais, R.; Kubicki, T.; Luebelsmeyer, K.; Pandoulas, D.; Rente, C.; Syben, O.; Toporowski, M.; Wittmer, B.; Xiao, W.J.

    1998-01-01

    We investigated the noise behaviour of surface barrier detectors (double sided Schottky contact) made of semiinsulating GaAs. Two types of measurements were performed: equivalent noise charge (ENC) and noise power density spectra in a frequency range from 10 Hz to 500 kHz. The shape of the density spectra are a powerful tool to examine the physical origin of the noise, before irradiation it is dominated by generation-recombination processes caused by deep levels. Temperature dependent noise measurements reveal the deep level parameters like activation energy and cross section, which are also extracted by analyzing the time transients of the charge pulse from α-particles. After irradiation with protons, neutrons and pions the influence of the deep levels being originally responsible for the noise is found to decrease and a reduction of the noise over the entire frequency range with increasing fluence is observed. (orig.)

  12. Low-temperature photoluminescence of detector-grade HgI2

    International Nuclear Information System (INIS)

    Merz, J.L.; Wu, Z.L.; van den Berg, L.; Schnepple, W.F.

    1981-01-01

    The low-temperature photoluminescence of HgI 2 is reported. Three main luminescence bands are observed, with peaks at approx. 2.30, 2.20, and 2.00 eV at 77 K. At 4.2 K, the highest energy peak shows considerable structure. The temperature dependence of these lines indicates both free and bound exciton recombination, and very small exciton binding energies (approx. 3 to 5 MeV) have been estimated. A comparison of the results of sublimation and doping experiments suggests that the lowest energy band may be related to impurities, whereas the middle-energy band is related to I content. The two strongest bound exciton lines comprising the high-energy band show systematic correlations with the middle-energy, I-related band. Further correlations between these spectral features and the performance of nuclear radiation detectors fabricated from these samples are also noted. The temperature coefficient of the band gap is estimated from the spectral shift of luminescence lines to be approximately -1.13 x 10 -4 eV/K between 32 K and 45 K

  13. Radiation damage in room-temperature data acquisition with the PILATUS 6M pixel detector

    Energy Technology Data Exchange (ETDEWEB)

    Rajendran, Chitra, E-mail: chitra.rajendran@psi.ch; Dworkowski, Florian S. N.; Wang, Meitian; Schulze-Briese, Clemens [Swiss Light Source at Paul Scherrer Institute, CH-5232 Villigen (Switzerland)

    2011-05-01

    Observations of the dose-rate effect in continuous X-ray diffraction data acquisition at room temperature are presented. The first study of room-temperature macromolecular crystallography data acquisition with a silicon pixel detector is presented, where the data are collected in continuous sample rotation mode, with millisecond read-out time and no read-out noise. Several successive datasets were collected sequentially from single test crystals of thaumatin and insulin. The dose rate ranged between ∼1320 Gy s{sup −1} and ∼8420 Gy s{sup −1} with corresponding frame rates between 1.565 Hz and 12.5 Hz. The data were analysed for global radiation damage. A previously unreported negative dose-rate effect is observed in the indicators of global radiation damage, which showed an approximately 75% decrease in D{sub 1/2} at sixfold higher dose rate. The integrated intensity decreases in an exponential manner. Sample heating that could give rise to the enhanced radiation sensitivity at higher dose rate is investigated by collecting data between crystal temperatures of 298 K and 353 K. UV-Vis spectroscopy is used to demonstrate that disulfide radicals and trapped electrons do not accumulate at high dose rates in continuous data collection.

  14. NEET Enhanced Micro-Pocket Fission Detector for High Temperature Reactors - FY16 Status Report

    Energy Technology Data Exchange (ETDEWEB)

    Unruh, Troy [Idaho National Lab. (INL), Idaho Falls, ID (United States); Reichenberger, Michael [Idaho National Lab. (INL), Idaho Falls, ID (United States); Stevenson, Sarah [Idaho National Lab. (INL), Idaho Falls, ID (United States); Tsai, Kevin [Idaho National Lab. (INL), Idaho Falls, ID (United States); McGregor, Douglas [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2016-09-01

    A collaboration between the Idaho National Laboratory (INL), the Kansas State University (KSU), and the French Atomic Energy Agency, Commissariat à l'Énergie Atomique et aux Energies Alternatives, (CEA), has been initiated by the Nuclear Energy Enabling Technologies (NEET) Advanced Sensors and Instrumentation (ASI) program for developing and testing High Temperature Micro-Pocket Fission Detectors (HT MPFD), which are compact fission chambers capable of simultaneously measuring thermal neutron flux, fast neutron flux and temperature within a single package for temperatures up to 800 °C. The MPFD technology utilizes a small, multi-purpose, robust, in-core fission chambers and thermocouple. As discussed within this report, the small size, variable sensitivity, and increased accuracy of the MPFD technology represent a revolutionary improvement over current methods used to support irradiations in US Material Test Reactors (MTRs). Previous research conducted through NEET ASI1-3 has shown that the MPFD technology could be made robust and was successfully tested in a reactor core. This new project will further the MPFD technology for higher temperature regimes and other reactor applications by developing a HT MPFD suitable for temperatures up to 800 °C. This report summarizes the research progress for year two of this three year project. Highlights from research accomplishments include: • Continuation of a joint collaboration between INL, KSU, and CEA. Note that CEA is participating at their own expense because of interest in this unique new sensor. • An updated parallel wire HT MPFD design was developed. • Program support for HT MPFD deployments was given to Accident Tolerant Fuels (ATF) and Advanced Gas-cooled Reactor (AGR) irradiation test programs. • Quality approved materials for HT MPFD construction were procured by irradiation test programs for upcoming deployments. • KSU improved and performed electrical contact and fissile material plating.

  15. Coherent Anti-Stokes and Coherent Stokes in Raman Scattering by Superconducting Nanowire Single-Photon Detector for Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Annepu Venkata Naga Vamsi

    2016-01-01

    Full Text Available We have reported the measurement of temperature by using coherent anti-Stroke and coherent Stroke Raman scattering using superconducting nano wire single-photon detector. The measured temperatures by both methods (Coherent Anti-Raman scattering & Coherent Stroke Raman scattering and TC 340 are in good accuracy of ± 5 K temperature range. The length of the pipe line under test can be increased by increasing the power of the pump laser. This methodology can be widely used to measure temperatures at instantaneous positions in test pipe line or the entire temperature of the pipe line under test.

  16. Multi-Electrode Resistivity Probe for Investigation of Local Temperature Inside Metal Shell Battery Cells via Resistivity: Experiments and Evaluation of Electrical Resistance Tomography

    Directory of Open Access Journals (Sweden)

    Xiaobin Hong

    2015-01-01

    Full Text Available Direct Current (DC electrical resistivity is a material property that is sensitive to temperature changes. In this paper, the relationship between resistivity and local temperature inside steel shell battery cells (two commercial 10 Ah and 4.5 Ah lithium-ion cells is innovatively studied by Electrical Resistance Tomography (ERT. The Schlumberger configuration in ERT is applied to divide the cell body into several blocks distributed in different levels, where the apparent resistivities are measured by multi-electrode surface probes. The investigated temperature ranges from −20 to 80 °C. Experimental results have shown that the resistivities mainly depend on temperature changes in each block of the two cells used and the function of the resistivity and temperature can be fitted to the ERT-measurement results in the logistical-plot. Subsequently, the dependence of resistivity on the state of charge (SOC is investigated, and the SOC range of 70%–100% has a remarkable impact on the resistivity at low temperatures. The proposed approach under a thermal cool down regime is demonstrated to monitor the local transient temperature.

  17. Characteristics of an intrinsic germanium detector for measurement of soft x-rays from high-temperature plasmas

    International Nuclear Information System (INIS)

    Kumagai, Katsuaki; Matoba, Tohru; Funahashi, Akimasa; Kawakami, Tomohide

    1976-09-01

    An intrinsic germanium (Ge(I)) detector has been prepared for measurement of soft X-ray spectra from high-temperature tokamak plasmas. Its characteristics of photo-peak efficiency, escape-peak and Compton scattering were calibrated with standard radioisotopes and soft X-rays from the JFT-2a plasma, and compared with those of a lithium-drifted silicon (Si(Li)) detector. Features of the Ge(I) detector are as follows: (i) high detection efficiency in the high energy range, (ii) wide energy range for measurement of soft X-ray spectra, and (iii) low Compton scattering effect in measurement of continuous spectra. Its dead-layer depth is about 0.06μm, and the minimum detectable energies in the Ge(I) detector are similar to those in the Si(Li) detector. The Ge(I) detector is effective for measuring soft X-ray spectra from high-temperature tokamak plasmas. (auth.)

  18. High-temperature abnormal behavior of resistivities for Bi-In melts

    International Nuclear Information System (INIS)

    Xi Yun; Zu Fangqiu; Li Xianfen; Yu Jin; Liu Lanjun; Li Qiang; Chen Zhihao

    2004-01-01

    The patterns of electrical resistivities versus temperature in large temperature range have been studied, using the D.C. four-probe method, for liquid Bi-In alloys (Bi-In(33 wt%), Bi-In(38 wt%), Bi-In(50.5 wt%), Bi-In(66 wt%)). The clear turning point of each resistivity-temperature curves of the liquid Bi-In alloys is observed at the temperature much above the melting point, in which temperature range the resistivity-temperature coefficient increases rapidly. Except for the turning temperature range, the resistivities of Bi-In alloys increase linearly with temperature. Because resistivity is sensitive to the structure, this experiment shows the structural transition in Bi-In melts at the temperature much higher than the liquidus. And it is suggested that there are different Bi-In short-range orderings in different Bi-In melts, so the resistivity-temperature curves have the turns at different temperatures and the resistivity-temperature coefficients are also different

  19. Calorimetric low-temperature detectors on semiconductor base for the energy-resolving detection of heavy ions

    International Nuclear Information System (INIS)

    Kienlin, A. von.

    1994-01-01

    In the framework of this thesis for the first time calorimetric low-temperature detectors for the energy-resolving detection of heavy ions were developed and successfully applied. Constructed were two different detector types, which work both with a semiconductor thermistor. The temperature increasement effected by a particle incidence is read out. In the first detector type the thermistor was simutaneously used as absorber. The thickness of the germanium crystals was sufficient in order to stop the studied heavy ions completely. In the second type, a composed calorimeter, a sapphire crystal, which was glued on a germanium thermistor, served as absorber for the incident heavy ions. The working point of the calorimeter lies in the temperature range (1.2-4.2 K), which is reachable with a pumped 4 He cryostat. The temperatur increasement of the calorimeter amounts after the incidence of a single α particle about 20-30 μK and that after a heavy ion incidence up to some mK. An absolute energy resolution of 400-500 keV was reached. In nine beam times the calorimeters were irradiated by heavy ions ( 20 Ne, 40 Ar, 136 Xe, 208 Pb, 209 Bi) of different energies (3.6 MeV/nucleon< E<12.5 MeV/nucleon) elastically scattered from gold foils. In the pulse height spectra of the first detector type relatively broad, complex-structurated line shapes were observed. By systematic measurements dependences of the complex line structures on operational parameters of the detector, the detector temperature, and the position of the incident particle could be detected. Together with the results of further experiments a possible interpretation of these phenomena is presented. Contrarily to the complex line structures of the pure germanium thermistor the line shapes in the pulse height spectra, which were taken up in a composite germanium/sapphire calorimeter, are narrow and Gauss-shaped

  20. Pressure Resistance Welding of High Temperature Metallic Materials

    International Nuclear Information System (INIS)

    Jerred, N.; Zirker, L.; Charit, I.; Cole, J.; Frary, M.; Butt, D.; Meyer, M.; Murty, K.L.

    2010-01-01

    Pressure Resistance Welding (PRW) is a solid state joining process used for various high temperature metallic materials (Oxide dispersion strengthened alloys of MA957, MA754; martensitic alloy HT-9, tungsten etc.) for advanced nuclear reactor applications. A new PRW machine has been installed at the Center for Advanced Energy Studies (CAES) in Idaho Falls for conducting joining research for nuclear applications. The key emphasis has been on understanding processing-microstructure-property relationships. Initial studies have shown that sound joints can be made between dissimilar materials such as MA957 alloy cladding tubes and HT-9 end plugs, and MA754 and HT-9 coupons. Limited burst testing of MA957/HT-9 joints carried out at various pressures up to 400 C has shown encouraging results in that the joint regions do not develop any cracking. Similar joint strength observations have also been made by performing simple bend tests. Detailed microstructural studies using SEM/EBSD tools and fatigue crack growth studies of MA754/HT-9 joints are ongoing.

  1. A model for temperature dependent resistivity of metallic superlattices

    Directory of Open Access Journals (Sweden)

    J. I. Uba

    2015-11-01

    Full Text Available The temperature dependent resistivity of metallic superlattices, to first order approximation, is assumed to have same form as bulk metal, ρ(T = ρo + aT, which permits describing these structures as linear atomic chain. The assumption is, substantiated with the derivation of the above expression from the standard magnetoresistance equation, in which the second term, a Bragg scattering factor, is a correction to the usual model involving magnon and phonon scatterings. Fitting the model to Fe/Cr data from literature shows that Bragg scattering is dominant at T < 50 K and magnon and phonon coefficients are independent of experiment conditions, with typical values of 4.7 × 10−4 μΩcmK−2 and −8 ± 0.7 × 10−7μΩcmK−3. From the linear atomic chain model, the dielectric constant ε q , ω = 8 . 33 × 10 − 2 at Debye frequency for all materials and acoustic speed and Thomas – Fermi screening length are pressure dependent with typical values of 1.53 × 104 m/s and 1.80 × 109 m at 0.5 GPa pressure for an Fe/Cr structure.

  2. On the temperature dependence of the excess resistivity in dilute volatile alloys

    International Nuclear Information System (INIS)

    Uray, L.; Vicsek, T.

    1978-01-01

    In recrystallized wires of many important refractory alloys, an appreciable part of the temperature dependence of the measured excess resistivity is related to the radial distribution of the volatile solutes (extrinsic temperature dependence). Both the extrinsic and the intrinsic part of the temperature dependence of the excess resistivity have been determined for dilute WFe, WCo and WRe alloys, by measuring the resistance as a function of temperature and the thickness of layers removed by electrothinning. In this way the parameters of the evaporation profiles were also determined. In the surface region at low temperatures the length scale of the inhomogeneity is comparable to the mean-free path. Therefore, the observed extrinsic temperature dependence of the excess resistivity was calculated directly from the Boltzmann equation. The WCo alloy is a Kondo system, since its resistivity shows a minimum a 20 K. (author)

  3. Room temperature solution processed low dimensional CH3NH3PbI3 NIR detector

    Science.gov (United States)

    Besra, N.; Paul, T.; Sarkar, P. K.; Thakur, S.; Sarkar, S.; Das, A.; Chanda, K.; Sardar, K.; Chattopadhyay, K. K.

    2018-05-01

    Metal halide perovskites have recently drawn immense research interests among the worldwide scientific community due to their excellent light harvesting capabilities and above all, cost effectiveness. These new class of materials have already been used as efficient optoelectronic devices e.g. solar cells, photo detectors, etc. Here in this work, room temperature NIR (near infra red) response of organic-inorganic lead halide perovskite CH3NH3PbI3 (Methylammonium lead tri iodide) nanorods has been studied. A very simple solution process technique has been adopted to synthesize CH3NH3PbI3 nanostructures at room temperature. The NIR exposure upon the sample resulted in a considerable hike in its dark current with very good responsivity (0.37 mA/W). Along with that, a good on-off ratio (41.8) was also obtained when the sample was treated under a pulsed NIR exposure with operating voltage of 2 V. The specific detectivity of the device came in the order of 1010 Jone.

  4. Radiation damage in room-temperature data acquisition with the PILATUS 6M pixel detector.

    Science.gov (United States)

    Rajendran, Chitra; Dworkowski, Florian S N; Wang, Meitian; Schulze-Briese, Clemens

    2011-05-01

    The first study of room-temperature macromolecular crystallography data acquisition with a silicon pixel detector is presented, where the data are collected in continuous sample rotation mode, with millisecond read-out time and no read-out noise. Several successive datasets were collected sequentially from single test crystals of thaumatin and insulin. The dose rate ranged between ∼ 1320 Gy s(-1) and ∼ 8420 Gy s(-1) with corresponding frame rates between 1.565 Hz and 12.5 Hz. The data were analysed for global radiation damage. A previously unreported negative dose-rate effect is observed in the indicators of global radiation damage, which showed an approximately 75% decrease in D(1/2) at sixfold higher dose rate. The integrated intensity decreases in an exponential manner. Sample heating that could give rise to the enhanced radiation sensitivity at higher dose rate is investigated by collecting data between crystal temperatures of 298 K and 353 K. UV-Vis spectroscopy is used to demonstrate that disulfide radicals and trapped electrons do not accumulate at high dose rates in continuous data collection.

  5. A revisit to the temperature dependence of electrical resistivity of α - Titanium at low temperatures

    Science.gov (United States)

    Sharath Chandra, L. S.; Mondal, R.; Thamizhavel, A.; Dhar, S. K.; Roy, S. B.

    2017-09-01

    The temperature dependence of resistivity ρ(T) of a polycrystalline sample and a single crystal sample (current along the [0001] direction) of α - Titanium (Ti) at low temperatures is revisited to understand the electrical charge transport phenomena in this hexagonal closed pack metal. We show that the ρ(T) in single crystal Ti can be explained by considering the scattering of electrons due to electron-phonon, electron-electron, inter-band s-d and electron-impurity interactions, whereas the ρ(T) of polycrystalline Ti could not be explained by these interactions alone. We observed that the effects of the anisotropy of the hexagonal structure on the electronic band structure and the phonon dispersion need to be taken into account to explain ρ(T) of polycrystalline Ti. Two Debye temperatures corresponding to two different directions for the electron-phonon interactions and inter-band s-d scattering are needed to account the observed ρ(T) in polycrystalline Ti.

  6. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1996-03-01

    Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

  7. Performance of room temperature mercuric iodide (HgI2) detectors in the ultra low energy x-ray region

    International Nuclear Information System (INIS)

    Dabrowski, A.J.; Iwanczyk, J.S.; Barton, J.B.; Huth, G.C.; Whited, R.; Ortale, C.; Economou, T.E.; Turkevich, A.L.

    1980-01-01

    Performance of room temperature mercuric iodide x-ray spectrometers has been recently improved through new fabrication techniques and further development of low noise associated electronic systems. This progress has extended the range of measurements to the ultra low energy x-ray region at room temperature. This paper reports the study of the effect of contact material on the performance of HgI 2 detectors in the low energy x-ray region

  8. Electric resistance of nickel and niobium in the temperature range of 300-1300 K

    International Nuclear Information System (INIS)

    Novikov, I.I.; Roshchupkin, V.V.; Mozgovoj, A.G.; Semashko, N.A.

    1982-01-01

    The results of experimental investigation of nickel and niobium electric resistance on the wire samples by the potentiometric method in the temperature range of 300-1300 K are presented. Experimental data processing by the least square method is carried out; approximating equations of temperature dependence of the nickel and niobium electric resistance are prepared

  9. Temperature Effect on the Susceptibility of Methicillin-Resistant Staphylococcus aureus to Four Different Cephalosporins

    OpenAIRE

    Canawati, Hanna N.; Witte, Joyce L.; Sapico, Francisco L.

    1982-01-01

    Forty isolates of methicillin-resistant Staphylococcus aureus were tested for in vitro susceptibility to cephalothin, cefamandole, cefotaxime, and moxalactam, using the disk diffusion and microbroth dilution methods at incubation temperatures of 30 and 35°C. Resistance to all four antibiotics was more clearly evident at an incubation temperature of 30°C.

  10. Resistance temperature sensor aging degradation identification using LCSR (Loop Current Step Response) test

    International Nuclear Information System (INIS)

    Santos, Roberto Carlos dos; Goncalves, Iraci Martine Pereira

    2013-01-01

    Most critical process temperatures in nuclear power plants are measured using RTD (Resistance Temperature Detector) and thermocouples. In a PWR (Pressure Water Reactor) plant, the primary coolant temperature and feedwater temperature are measured using RTDs, and the temperature of the water that exits the reactor core is measured using thermocouples. These thermocouples are mainly used for temperature monitoring purposes and are therefore not generally subject to very stringent requirements for accuracy and response-time performance. In contrast, primary coolant RTDs typically feed the plant's control and safety systems and must, therefore, be very accurate and have good dynamic performance. The response time of RTDs and thermocouples has been characterized by a single parameter called the Plunge Time Constant. This is defined as the time it takes the sensor output to achieve 63.2 percent of its final value after a step change in temperature is impressed on its surface. This step change is typically achieved by suddenly immersing the sensor in a rotating tank of water, called Plunge Test. In nuclear reactors, however, plunge testing is inconvenient because the sensor must be removed from the reactor coolant piping and taken to a laboratory for testing. Nuclear reactor service conditions of 150 bar and 300°C are difficult to reproduce in the laboratory. Therefore, all laboratory tests are performed at much milder conditions, and the results are extrapolated to service conditions. This leads to significant errors in the measurement of sensor response times and an insitu test method called LCSR - Loop Current Step Response test was developed in the mid-1970s to measure remotely the response time of RTDs. In the LCSR method, the sensing element is heated by an electric current; the current causes Joule heating in the sensor and results in a temperature transient inside the sensor. The temperature transient in the element is recorded, and from this transient, the

  11. Temperature and mixing effects on electrical resistivity of carbon fiber enhanced concrete

    International Nuclear Information System (INIS)

    Chang, Christiana; Song, Gangbing; Gao, Di; Mo, Y L

    2013-01-01

    In this paper, the effect of temperature and mixing procedure on the electrical resistivity of carbon fiber enhanced concrete is investigated. Different compositions of concrete containing varying concentrations of carbon fiber into normal and self-consolidating concrete (SCC) were tested under DC electrical loading over the temperature range −10 to 20 °C. The electrical resistivity of the bulk samples was calculated and compared against temperature. It was observed that there is an inverse exponential relationship between resistivity and temperature which follows the Arrhenius relationship. The bulk resistivity decreased with increasing fiber concentration, though data from SCC indicates a saturation limit beyond which electrical resistivity begins to drop. The activation energy of the bulk electrically conductive concrete was calculated and compared. While SCC exhibited the lowest observed electrical resistance, the activation energy was similar amongst SCC and surfactant enhanced concrete, both of which were lower than fiber dispersed in normal concrete. (paper)

  12. Effects of pressure and temperature on thermal contact resistance between different materials

    Directory of Open Access Journals (Sweden)

    Zhao Zhe

    2015-01-01

    Full Text Available To explore whether pressure and temperature can affect thermal contact resistance, we have proposed a new experimental approach for measurement of the thermal contact resistance. Taking the thermal contact resistance between phenolic resin and carbon-carbon composites, cuprum, and aluminum as the examples, the influence of the thermal contact resistance between specimens under pressure is tested by experiment. Two groups of experiments are performed and then an analysis on influencing factors of the thermal contact resistance is presented in this paper. The experimental results reveal that the thermal contact resistance depends not only on the thermal conductivity coefficient of materials, but on the interfacial temperature and pressure. Furthermore, the thermal contact resistance between cuprum and aluminum is more sensitive to pressure and temperature than that between phenolic resin and carbon-carbon composites.

  13. Detectors for Tomorrow's Instruments

    Science.gov (United States)

    Moseley, Harvey

    2009-01-01

    Cryogenically cooled superconducting detectors have become essential tools for a wide range of measurement applications, ranging from quantum limited heterodyne detection in the millimeter range to direct searches for dark matter with superconducting phonon detectors operating at 20 mK. Superconducting detectors have several fundamental and practical advantages which have resulted in their rapid adoption by experimenters. Their excellent performance arises in part from reductions in noise resulting from their low operating temperatures, but unique superconducting properties provide a wide range of mechanisms for detection. For example, the steep dependence of resistance with temperature on the superconductor/normal transition provides a sensitive thermometer for calorimetric and bolometric applications. Parametric changes in the properties of superconducting resonators provides a mechanism for high sensitivity detection of submillimeter photons. From a practical point of view, the use of superconducting detectors has grown rapidly because many of these devices couple well to SQUID amplifiers, which are easily integrated with the detectors. These SQUID-based amplifiers and multiplexers have matured with the detectors; they are convenient to use, and have excellent noise performance. The first generation of fully integrated large scale superconducting detection systems are now being deployed. I will discuss the prospects for a new generation of instruments designed to take full advantage of the revolution in detector technology.

  14. Low-temperature technique for thick film resist stabilization and curing

    Science.gov (United States)

    Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

    1999-06-01

    For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

  15. The high temperature resistivity of Ba2YCu3O7-chi

    International Nuclear Information System (INIS)

    Xingkui, Z.; Shining, Z.; Hao, W.; Shiyuan, Z.; Ningshen, Z.; Ziran, X.

    1988-01-01

    The high temperature resistivity (rho), thermogravimetry (TG) and derivative thermogravimetric (DTG) have been used to characterize superconductor Ba 2 YCu 3 O 7-chi (BYCO) in O 2 , air and N 2 . The resistivity is linear from room temperature at 350 0 C and then deviate from linearity with oxygen evolution, the derivative of resistivity drho/dT increases abruptly near orthorhombic to tetragonal phase transition. These phenomena can give good explanations for a two-band Drude model

  16. The High Temperature Resistivity of Ba2YCu3O7-x

    Science.gov (United States)

    Xingkui, Zhang; Shining, Zhu; Hao, Wang; Shiyuan, Zhang; Su, Ye; Ningshen, Zhou; Ziran, Xu

    The high temperature resistivity (ρ), thermogravimetry (TG) and derivative thermogravimetry (DTG) have been used to characterize superconductor Ba2YCu3O7-x (BYCO) in O2, air and N2. The resistivity is linear from room temperature to 350°C and then deviate from linearity with oxygen evolution, the derivative of resistivity dρ/dT increases abruptly near orthorhombic to tetragonal phase transition. These phenomena can give good explanations for a two-band Drude model.

  17. Electrical transport and temperature coefficient of resistance in polycrystalline La0.7−xAgxCa0.3MnO3 pellets: Analysis in terms of a phase coexistence transport model and phase separation model

    International Nuclear Information System (INIS)

    Phong, P.T.; Nguyen, L.H.; Manh, D.H.; Phuc, N.X.; Lee, I.-J.

    2013-01-01

    The temperature dependent resistivity and temperature coefficient of resistance of Ag doped La 0.7−x Ag x Ca 0.3 MnO 3 polycrystalline pellets (x=0, 0.05, 0.10, 0.15, and 0.20) are investigated. Ag substitution enhances the conductivity of this system. The Curie temperature also increases from 260 to 283 K with increasing Ag content. Using phase-coexistence transport model and phase separation model, we calculated the resistivity as a function of temperature and the temperature coefficient of resistivity (TCR) behavior. Comparing the calculated maximum TCR, we found that it is related to activation energy, transition temperature, and disorder in doped manganites. The relationship between the proposed TCR behavior and the transport parameters can suggest conditions improving TCR max of doped manganites for the use of the bolometric infrared detectors

  18. Effect of temperature on the crack resistance of a molybdenum alloy with 30% tungsten

    International Nuclear Information System (INIS)

    Uskov, E.I.; Babak, A.V.; D'yachkov, A.P.; Platonov, V.A.

    1986-01-01

    Results are presented for a study of the effect of temperature on the crack resistance of molybdenum alloy with 30% tungsten (Mo - 30% W), and data are presented for the crack resistance of commercial-purity molybdenum and tungsten obtained by power metallurgy in the temperature range 20-1800 C. It was found that the nature of failure for Mo-30% W alloy depends on test temperature; in the temperature range 20 C-T /SUP d/ /SUB br/ (upper boundary for the temperature range of the ductile to brittle transition), failure is unstable in nature, and at temperatures exceeding this transition, it occurs by steady main crack development

  19. Temperature relaxation at the Kapitza-boundary-resistance paradox

    NARCIS (Netherlands)

    Maassen van den Brink, A.; Dekker, H.

    1995-01-01

    The calculation of the Kapitza boundary resistance between dissimilar harmonic solids has for a long time [W. A. Little, Can. J. Phys. 37, 334 (1959)] presented a paradox: this resistance erroneously tends to a finite value in the limit of identical solids. We resolve this paradox by calculating

  20. Oxidation resistance of nickel alloys at high temperature

    International Nuclear Information System (INIS)

    Tyuvin, Yu.D.; Rogel'berg, I.L.; Ryabkina, M.M.; Plakushchaya, A.F.

    1977-01-01

    The heat resistance properties of nickel alloys Ni-Cr-Si, Ni-Si-Al, Ni-Si-Mn and Ni-Al-Mn have been studied by the weight method during oxidation in air at 1000 deg and 1200 deg C. It is demonstrated that manganese reduces the heat resistance properties of Ni-Si and Ni-Al alloys, whilst the addition of over 3% aluminium enhances the heat resistance properties of Ni-Si (over 1.5%) alloys. The maximum heat resistance properties are shown by Ni-Si-Al and Ni-Cr-Si alloys with over 2% Si. These alloys offer 3 to 4 times better oxidation resistance as compared with pure nickel at 1000 deg C and 10 times at 1200 deg C

  1. Design and characterization of radiation resistant integrated circuits for the LHC particle detectors using deep sub-micron CMOS technologies

    International Nuclear Information System (INIS)

    Anelli, Giovanni Maria

    2000-01-01

    The electronic circuits associated with the particle detectors of the CERN Large Hadron Collider (LHC) have to work in a highly radioactive environment. This work proposes a methodology allowing the design of radiation resistant integrated circuits using the commercial sub-micron CMOS technology. This method uses the intrinsic radiation resistance of ultra-thin grid oxides, the technology of enclosed layout transistors (ELT), and the protection rings to avoid the radio-induced creation of leakage currents. In order to check the radiation tolerance level, several test structures have been designed and tested with different radiation sources. These tests have permitted to study the physical phenomena responsible for the damages induced by the radiations and the possible remedies. Then, the particular characteristics of ELT transistors and their influence on the design of complex integrated circuits has been explored. The modeling of the W/L ratio, the asymmetries (for instance in the output conductance) and the performance of ELT couplings have never been studied yet. The noise performance of the 0.25 μ CMOS technology, used in the design of several integrated circuits of the LHC detectors, has been characterized before and after irradiation. Finally, two integrated circuits designed using the proposed method are presented. The first one is an analogic memory and the other is a circuit used for the reading of the signals of one of the LHC detectors. Both circuits were irradiated and have endured very high doses practically without any sign of performance degradation. (J.S.)

  2. On-line monitoring of resistance of aqueous solutions at high temperature

    International Nuclear Information System (INIS)

    Hu Shilin; Zhang Pingzhu; Shang Weiguo

    1999-01-01

    The coulostatic measurement is a fast speed electrochemical test method. By this technology, analyzing Δ E(t)- T curves recorded under coulostatic perturbation, the solution resistance R l , resistance of coated film R f , capacity of coated film C f , Polarization resistance R p and double layer capacity C d are obtained. The resistance variety of 0.05N KCl is measured from room temperature up to 255 deg. C under saturation steam pressure. (author)

  3. Radiation resistance of γ-detector modules at the labelling station of labelled neutrino complex

    International Nuclear Information System (INIS)

    Pishchal'nikov, Yu.M.

    1986-01-01

    The data on efficiency and transparency decrease of various types of lightpipe-spectrum (LSS) and scintillation plates on the basis of PMMA and polystyrene under the dose irradiation ranging from 10 4 to 3x10 6 rad have been obtained. Sample irradiation was carried out in a wide muon beam and with the intensive radioactie source 60 Co. The deterioration in the γ-detector (TNF) energy resolution due to the radiation damage of scintillators and (LSS) is discussed. Radiation damage of the lead glass detectors (the GAMS detector) and ''sandwich'' type modules have been compared

  4. Feasibility study for a first observation of coherent neutrino nucleus scattering using low-temperature detectors

    International Nuclear Information System (INIS)

    Guetlein, Achim

    2013-01-01

    Coherent Neutrino Nucleus Scattering (CNNS) is a neutral current process of the weak interaction. For low transferred momenta the neutrino scatters coherently off all nucleons leading to an enhanced cross section. However, because of the small resulting recoil energies (O(keV)) CNNS has not been observed experimentally so far. For the first observation of CNNS a strong neutrino source is needed. Thus, the expected count rates for solar neutrinos, supernova neutrinos, neutrinos generated by the decay of stopped π + particles at accelerators, and reactor neutrinos were calculated. Although an observation of CNNS could also be possible with other sources, the most promising neutrino sources are nuclear reactors with thermal powers between 2 and 4 GW. For an assumed energy threshold of 0.5 keV the target material with the largest count rate (∝10 kg -1 day -1 ) is sapphire. Thus, a low-temperature detector based on a 32 g sapphire crystal was designed and built to measure the background spectrum for energies below ∝10 keV. Although the energy threshold (∝1 keV) of this detector is too large for an observation of CNNS, the measured background spectrum can still be used for an investigation of the main background sources and the suppression of their events. For this investigation the simulated spectra of cosmic muons, ambient neutrons, and external gamma-rays are compared to the measured background spectrum. As a result, cosmic muons are the main contribution to the measured background spectrum. For a future experiment aiming at the observation of CNNS an array of 125 low-temperature detectors based on 32 g sapphire crystals is assumed. Background simulations of cosmic muons, ambient neutrons, and intrinsic radioactivity show that especially an efficient muon-veto system is crucial for a sufficient background suppression. To study the observation potential of this future experiment a distance of ∝ 40 m to a reactor core with a thermal power of ∝4 GW (neutrino

  5. Radiation measurements by pn junction InSb detector at the temperature from 4.2 K to 115 K

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yoshihara, Fumiki; Nouchi, Ryo; Sugiura, Osamu; Murase, Yasuhiro; Nakamura, Tatsuya; Katagiri, Masaki

    2003-01-01

    We fabricated the pn junction-type detectors on a p-type InSb substrate. Both sides of the InSb substrate were etched using a mixture of nitric and lactic acids. On the top side surface, Sn and Al were deposited by heat evaporation and then the Sn was diffused into the p-type InSb by lamp annealing and resulted in the n-type layer. Based on the confirmation of the performance of the InSb detector at temperatures of 0.5 K and 4.2 K, we concentrated on the measurement of alpha particles by the pm junction-type InSb detectors at higher operating temperatures of up to 115 K. The InSb detector showed a wide temperature operating range. We can conclude that all of the voltage was induced slowly by the holes at 4.2 K and mainly as a result of electrons at 77 K. (T. Tanaka)

  6. ΔN-TRPV1: A Molecular Co-detector of Body Temperature and Osmotic Stress

    Directory of Open Access Journals (Sweden)

    Cristian Zaelzer

    2015-10-01

    Full Text Available Thirst and antidiuretic hormone secretion occur during hyperthermia or hypertonicity to preserve body hydration. These vital responses are triggered when hypothalamic osmoregulatory neurons become depolarized by ion channels encoded by an unknown product of the transient receptor potential vanilloid-1 gene (Trpv1. Here, we show that rodent osmoregulatory neurons express a transcript of Trpv1 that mediates the selective translation of a TRPV1 variant that lacks a significant portion of the channel’s amino terminus (ΔN-TRPV1. The mRNA transcript encoding this variant (Trpv1dn is widely expressed in the brains of osmoregulating vertebrates, including the human hypothalamus. Transfection of Trpv1dn into heterologous cells induced the expression of ion channels that could be activated by either hypertonicity or by heating in the physiological range. Moreover, expression of Trpv1dn rescued the osmosensory and thermosensory responses of single hypothalamic neurons obtained from Trpv1 knockout mice. ΔN-TRPV1 is therefore a co-detector of core body temperature and fluid tonicity.

  7. A novel method for simultaneous observations of plasma ion and electron temperatures using a semiconductor-detector array

    International Nuclear Information System (INIS)

    Cho, T.; Numakura, T.; Kohagura, J.; Hirata, M.; Minami, R.; Watanabe, H.; Sasuga, T.; Nishizawa, Y.; Yoshida, M.; Nagashima, S.; Nakashima, Y.; Ogura, K.; Tamano, T.; Yatsu, K.; Miyoshi, S.

    2002-01-01

    A new method for a simultaneous observation of both plasma ion and electron temperatures is proposed using one semiconductor-detector array alone. This method will provide a new application of semiconductor-detector arrays for monitoring the key parameter set of nuclear-fusion triple product (i.e., ion temperatures, densities, and confinement time) as well as for clarifying physics mechanisms of energy transport between plasma ions and electrons under various plasma confining conditions. This method is developed on the basis of an alternative 'positive' use of a semiconductor 'dead layer'; that is, an SiO 2 layer is employed as a reliable ultra-thin energy analysis filter for low-energy charge-exchanged neutral particles from plasmas ranging in ion temperatures from 0.1 to several tens of kilo-electron-volts. Using recent fabrication techniques for the thin and uniform SiO 2 layers of the order of tens to hundreds of angstrom, our computer simulation and its experimental verification show the availability of such semiconductors for distinguishing neutral particles (for ion temperatures) from X-rays (for electron temperatures). These are simultaneously emitted from the plasmas into semiconductor detectors; however, we employ their quite different penetration lengths and the resultant different deposition depths and profiles in semiconductor materials. As a result, their output signals are distinguishable for these two different and fundamental species of plasmas

  8. High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

    Science.gov (United States)

    Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

    2018-06-01

    The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

  9. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

    Energy Technology Data Exchange (ETDEWEB)

    Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinski (Finland); Singh, P; Engels, E Jr; Shepard, J; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

    1993-03-01

    AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a [sup 137]Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 Mrad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are discribed. (orig.).

  10. Operation and radiation resistance of a FOXFET biasing structure for silicon strip detectors

    International Nuclear Information System (INIS)

    Laakso, M.; Helsinki Univ.; Singh, P.; Engels, E. Jr.; Shepard, P.

    1992-02-01

    AC-coupled strip detectors biased with a FOXFET transistor structure have been studied. Measurement results for the basic operational characteristics of the FOXFET are presented together with a brief description of the physics underlying its operation. Radiation effects were studied using photons from a 137 Cs source. Changes in the FOXFET characteristics as a function of radiation dose up to 1 MRad are reported. Results about the effect of radiation on the noise from a FOXFET biased detector are described. 13 refs

  11. Ion-temperature measurement of indirectly driven implosions using a geometry-compensated neutron time-of-flight detector

    International Nuclear Information System (INIS)

    Murphy, T.J.; Lerche, R.A.; Bennett, C.; Howe, G.

    1995-01-01

    A geometry-compensated neutron time-of-flight detector has been constructed and used on Nova to measure ion temperatures from indirectly driven implosions with yields between 2.5 and 5x10 9 DD neutrons. The detector, which has an estimated respond time of 250 ps, was located 150 cm from the targets. Due to the long decay time of the scintillator, the time-of-flight signal must be unfolded from the measured detector signal. Several methods for determining the width of the neutron energy spectrum from the data have been developed and give similar results. Scattered x rays continue to be a problem for low yield shots, but should be brought under control with adequate shielding

  12. Ion temperature measurement of indirectly-driven implosions using a geometry-compensated neutron time-of-flight detector

    International Nuclear Information System (INIS)

    Murphy, T.J.; Lerche, R.A.; Bennett, C.; Howe, G.

    1994-05-01

    A geometry-compensated neutron time-of-flight detector has been constructed and used on Nova to measure ion temperatures from indirectly-driven implosions with yields between 2.5 and 5 x 10 9 DD neutrons. The detector, which has an estimated response time of 250 ps, was located 150 cm from the targets. Due to the long decay time of the scintillator, the time-of-flight signal must be unfolded from the measured detector signal. Several methods for determining the width of the neutron energy spectrum from the data have been developed and give similar results. Scattered x rays continue to be a problem for low yield shots, but should be brought under control with adequate shielding

  13. The anomalous low temperature resistivity of thermally evaporated α-Mn thin film

    International Nuclear Information System (INIS)

    Ampong, F.K.; Boakye, F.; Nkum, R.K.

    2010-01-01

    Electrical resistivity measurements have been carried out on thermally evaporated α-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10 -6 Torr. The results show a resistance minimum, a notable characteristic of α-Mn but at a (rather high) temperature of 194±1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 μΩm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  14. The anomalous low temperature resistivity of thermally evaporated alpha-Mn thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ampong, F.K., E-mail: kampxx@yahoo.co [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana); Boakye, F.; Nkum, R.K. [Department of Physics, Kwame Nkrumah University of Science and Technology, Kumasi (Ghana)

    2010-08-15

    Electrical resistivity measurements have been carried out on thermally evaporated alpha-Mn thin film between 300 and 1.4 K using the van der Pauw four probe technique. The film was grown on a glass substrate held at a temperature of 373 K, in an ambient pressure of 5x10{sup -6} Torr. The results show a resistance minimum, a notable characteristic of alpha-Mn but at a (rather high) temperature of 194+-1 K. Below the resistivity maximum which corresponds to 70 K, the resistivity drops by only 0.02 muOMEGAm indicating a rather short range magnetic ordering. The low temperature results show a tendency towards saturation of the resistivity as the temperature approaches zero suggesting a Kondo scattering.

  15. Temperature dependency of electrical resistivity of soils; Tsuchi no hiteiko no ondo izonsei ni kansuru kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Park, S; Matsui, T [Osaka University, Osaka (Japan). Faculty of Engineering; Park, M; Fujiwara, H [Osaka University, Osaka (Japan)

    1997-10-22

    Kinds of ground materials, porosity, electrical resistivity of pores, degree of saturation, and content of clays are the factors affecting the electrical resistivity of soils. In addition to these factors, the electrical resistivity of soils around hot spring water and geothermal areas depends on the temperature due to fluctuation of cation mobility in the pore water with the temperature. In this paper, the temperature dependency of electrical resistivity of groundwater and soils is investigated by recognizing that of groundwater as that of pore water. As a result, it was found that the electrical resistivity of groundwater becomes lower as increasing the amount of dissolved cation, and that the temperature dependency of electrical resistivity is not significant because of the small mobility of cation. The electrical resistivity of soils was significantly affected by that of pore water, in which the mobility of cation was changed with temperature changes. Accordingly, the temperature dependency of electrical resistivity of soils has a similar tendency as that of groundwater. 5 refs., 9 figs., 2 tabs.

  16. Evaluation of high temperature superconductive thermal bridges for space borne cryogenic detectors

    Science.gov (United States)

    Scott, Elaine P.

    1996-01-01

    Infrared sensor satellites are used to monitor the conditions in the earth's upper atmosphere. In these systems, the electronic links connecting the cryogenically cooled infrared detectors to the significantly warmer amplification electronics act as thermal bridges and, consequently, the mission lifetimes of the satellites are limited due to cryogenic evaporation. High-temperature superconductor (HTS) materials have been proposed by researchers at the National Aeronautics and Space Administration Langley's Research Center (NASA-LaRC) as an alternative to the currently used manganin wires for electrical connection. The potential for using HTS films as thermal bridges has provided the motivation for the design and the analysis of a spaceflight experiment to evaluate the performance of this superconductive technology in the space environment. The initial efforts were focused on the preliminary design of the experimental system which allows for the quantitative comparison of superconductive leads with manganin leads, and on the thermal conduction modeling of the proposed system. Most of the HTS materials were indicated to be potential replacements for the manganin wires. In the continuation of this multi-year research, the objectives of this study were to evaluate the sources of heat transfer on the thermal bridges that have been neglected in the preliminary conductive model and then to develop a methodology for the estimation of the thermal conductivities of the HTS thermal bridges in space. The Joule heating created by the electrical current through the manganin wires was incorporated as a volumetric heat source into the manganin conductive model. The radiative heat source on the HTS thermal bridges was determined by performing a separate radiant interchange analysis within a high-T(sub c) superconductor housing area. Both heat sources indicated no significant contribution on the cryogenic heat load, which validates the results obtained in the preliminary conduction

  17. Multielement CdZnTe detectors for high-efficiency, ambient-temperature gamma-ray spectroscopy

    International Nuclear Information System (INIS)

    Prettyman, T.H.; Moss, C.E.; Sweet, M.R.; Ianakiev, K.; Reedy, R.C.; Li, J.; Valentine, J.D.

    1998-01-01

    CdZnTe is an attractive alternative to scintillator-based technology for ambient-temperature, gamma-ray spectroscopy. Large, single-element devices up to 3500 mm 3 have been developed for gamma-ray spectroscopy and are now available commercially. Because CdZnTe is a wide band-gap semiconductor, it can operate over a wide range of ambient temperatures with minimal power consumption. Over this range, CdZnTe detectors routinely yield better overall performance for gamma-ray spectroscopy than scintillator detectors. Manufacturing issues and material electronic properties limit the maximum size of single-element CdZnTe detectors. The authors are investigating methods to combine CdZnTe detectors together to improve detection efficiency and overall performance of gamma-ray spectroscopy. The applications include the assay and identification of radioisotopes for nuclear material safeguards and nonproliferation (over the energy range 50 keV to 1 MeV), and the analysis of elemental composition for planetary science (over the energy range 1 MeV to 10 MeV). Design issues for the two energy ranges are summarized

  18. Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

    International Nuclear Information System (INIS)

    Borer, K.; Janos, S.; Palmieri, V.G.; Buytaert, J.; Chabaud, V.; Chochula, P.; Collins, P.; Dijkstra, H.; Niinikoski, T.O.; Lourenco, C.; Parkes, C.; Saladino, S.; Ruf, T.; Granata, V.; Pagano, S.; Vitobello, F.; Bell, W.; Bartalini, P.; Dormond, O.; Frei, R.; Casagrande, L.; Bowcock, T.; Barnett, I.B.M.; Da Via, C.; Konorov, I.; Paul, S.; Schmitt, L.; Ruggiero, G.; Stavitski, I.; Esposito, A.

    2000-01-01

    This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double-sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5x10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the 'Lazarus effect', can be related to similar recent observations on diode behaviour

  19. Temperature dependence of residual electrical resistivity of Cu-Au in pseudopotential approximation

    International Nuclear Information System (INIS)

    Khwaja, F.A.; Ahmed, I.; Shaukat, A.

    1986-08-01

    The problem of temperature dependence of residual electrical resistivity of Cu-Au system is re-examined in the light of static distortion and thermal vibration of the lattice along with the short-range-order of atoms above critical temperature. The extended version of Ziman's formula for resistivity obtained yields a unified version for the calculation of resistivity in pseudopotential approximation. The temperature dependence of the quantity Δρ/ρ in this framework for Cu-Au system is found to be in better agreement with the experimental data as compared to previous calculation. (author)

  20. Halogen effect for improving high temperature oxidation resistance of Ti-50Al by anodization

    Science.gov (United States)

    Mo, Min-Hua; Wu, Lian-Kui; Cao, Hua-Zhen; Lin, Jun-Pin; Zheng, Guo-Qu

    2017-06-01

    The high temperature oxidation resistance of Ti-50Al was significantly improved via halogen effect which was achieved by anodizing in an ethylene glycol solution containing with fluorine ion. The anodized Ti-50Al with holes and micro-cracks could be self-repaired during oxidation at 1000 °C. The thickness of the oxide scale increases with the prolonging of oxidation time. On the basis of halogen effect for improving the high temperature oxidation resistance of Ti-50Al by anodization, only fluorine addition into the electrolyte can effectively improve the high temperature oxidation resistance of Ti-50Al.

  1. Neutron radiation damage studies on silicon detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Chen, W.; Kraner, H.W.

    1990-10-01

    Effects of neutron radiation on electrical properties of Si detectors have been studied. At high neutron fluence (Φ n ≥ 10 12 n/cm 2 ), C-V characteristics of detectors with high resistivities (ρ ≥ 1 kΩ-cm) become frequency dependent. A two-trap level model describing this frequency dependent effect is proposed. Room temperature anneal of neutron damaged (at LN 2 temperature) detectors shows three anneal stages, while only two anneal stages were observed in elevated temperature anneal. 19 refs., 14 figs

  2. Materials and coatings to resist high temperature oxidation and corrosion

    International Nuclear Information System (INIS)

    1977-01-01

    Object of the given papers are the oxidation and corrosion behaviour of several materials (such as stainless steels, iron-, or nickel-, or cobalt-base alloys, Si-based ceramics) used at high temperatures and various investigations on high-temperature protective coatings. (IHoe) [de

  3. Micromachined Joule-Thomson coolers for cooling low-temperature detectors and electronics

    Science.gov (United States)

    ter Brake, Marcel; Lerou, P. P. P. M.; Burger, J. F.; Holland, H. J.; Derking, J. H.; Rogalla, H.

    2017-11-01

    The performance of electronic devices can often be improved by lowering the operating temperature resulting in lower noise and larger speed. Also, new phenomena can be applied at low temperatures, as for instance superconductivity. In order to fully exploit lowtemperature electronic devices, the cryogenic system (cooler plus interface) should be `invisible' to the user. It should be small, low-cost, low-interference, and above all very reliable (long-life). The realization of cryogenic systems fulfilling these requirements is the topic of research of the Cooling and Instrumentation group at the University of Twente. A MEMS-based cold stage was designed and prototypes were realized and tested. The cooler operates on basis of the Joule-Thomson effect. Here, a high-pressure gas expands adiabatically over a flow restriction and thus cools and liquefies. Heat from the environment (e.g., an optical detector) can be absorbed in the evaporation of the liquid. The evaporated working fluid returns to the low-pressure side of the system via a counter-flow heat exchanger. In passing this heat exchanger, it takes up heat from the incoming high-pressure gas that thus is precooled on its way to the restriction. The cold stage consists of a stack of three glass wafers. In the top wafer, a high-pressure channel is etched that ends in a flow restriction with a height of typically 300 nm. An evaporator volume crosses the center wafer into the bottom wafer. This bottom wafer contains the lowpressure channel thus forming a counter-flow heat exchanger. A design aiming at a net cooling power of 10 mW at 96 K and operating with nitrogen as the working fluid was optimized based on the minimization of entropy production. The optimum cold finger measures 28 mm x 2.2 mm x 0.8 mm operating with a nitrogen flow of 1 mg/s at a high pressure of 80 bar and a low pressure of 6 bar. The design and fabrication of the coolers will be discussed along with experimental results.

  4. High-temperature and high-humidity response of the Eberline Model PRS-2 and the Eberline Model NRD neutron detector

    International Nuclear Information System (INIS)

    McAtee, J.L.

    1981-03-01

    The high-humidity and high-temperature response of the Eberline Model PRS-2 portable scaler-ratemeter and the Eberline Model NRD neutron detector was studied in an environmental chamber. The BF 3 probe used in the NRD detector was found to produce count rate surges at temperatures > 50 0 C and at relative humidity > 50%. The PRS-2 scaler-ratemeter was found to be relatively insensitive to high temperatures and high humidity

  5. Signal development in irradiated silicon detectors

    CERN Document Server

    Kramberger, Gregor; Mikuz, Marko

    2001-01-01

    This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

  6. Linear and quadratic in temperature resistivity from holography

    Energy Technology Data Exchange (ETDEWEB)

    Ge, Xian-Hui [Department of Physics, Shanghai University, Shanghai 200444 (China); Shanghai Key Laboratory of High Temperature Superconductors,Shanghai 200444 (China); Shanghai Key Lab for Astrophysics,100 Guilin Road, 200234 Shanghai (China); Tian, Yu [School of Physics, University of Chinese Academy of Sciences,Beijing, 100049 (China); Shanghai Key Laboratory of High Temperature Superconductors,Shanghai 200444 (China); Wu, Shang-Yu [Department of Electrophysics, National Chiao Tung University,Hsinchu 300 (China); Wu, Shao-Feng [Department of Physics, Shanghai University, Shanghai 200444 (China); Shanghai Key Laboratory of High Temperature Superconductors,Shanghai 200444 (China); Shanghai Key Lab for Astrophysics,100 Guilin Road, 200234 Shanghai (China)

    2016-11-22

    We present a new black hole solution in the asymptotic Lifshitz spacetime with a hyperscaling violating factor. A novel computational method is introduced to compute the DC thermoelectric conductivities analytically. We find that both the linear-T and quadratic-T contributions to the resistivity can be realized, indicating that a more detailed comparison with experimental phenomenology can be performed in this scenario.

  7. High temperature creep strength of Advanced Radiation Resistant Oxide Dispersion Strengthened Steels

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Sanghoon; Kim, Tae Kyu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Austenitic stainless steel may be one of the candidates because of good strength and corrosion resistance at the high temperatures, however irradiation swelling well occurred to 120dpa at high temperatures and this leads the decrease of the mechanical properties and dimensional stability. Compared to this, ferritic/martensitic steel is a good solution because of excellent thermal conductivity and good swelling resistance. Unfortunately, the available temperature range of ferritic/martensitic steel is limited up to 650 .deg. C. ODS steel is the most promising structural material because of excellent creep and irradiation resistance by uniformly distributed nano-oxide particles with a high density which is extremely stable at the high temperature in ferritic/martensitic matrix. In this study, high temperature strength of advanced radiation resistance ODS steel was investigated for the core structural material of next generation nuclear systems. ODS martensitic steel was designed to have high homogeneity, productivity and reproducibility. Mechanical alloying, hot isostactic pressing and hot rolling processes were employed to fabricate the ODS steels, and creep rupture test as well as tensile test were examined to investigate the behavior at high temperatures. ODS steels were fabricated by a mechanical alloying and hot consolidation processes. Mechanical properties at high temperatures were investigated. The creep resistance of advanced radiation resistant ODS steels was more superior than those of ferritic/ martensitic steel, austenitic stainless steel and even a conventional ODS steel.

  8. Charge dividing mechanism on resistive electrode in position-sensitive detectors

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.

    1978-10-01

    A complete charge-division mechanism, including both the diffusion and the electromagnetic wave propagation on resistive electrodes, is presented. The charge injected into such a transmission line divides between the two ends according to the ratio of resistancies and independently of the value of the line resistance, of the propagation mechanism and of the distribution of inductance and capacitance along the line. The shortest charge division time is achieved for Rl = 2π (L/C) 1 / 2 , where R, L, C are resistance, inductance and capacitance per unit length and l is the length of the line

  9. A simple test procedure for evaluating low temperature crack resistance of asphalt concrete.

    Science.gov (United States)

    2009-11-01

    The current means of evaluating the low temperature cracking resistance of HMA relies on extensive test : methods that require assumptions about material behaviors and the use of complicated loading equipment. The purpose : of this study was to devel...

  10. Mode I and Mode II Interlaminar Crack Growth Resistances of Ceramic Matrix Composites at Ambient Temperature

    National Research Council Canada - National Science Library

    Choi, Sung R; Kowalik, Robert W; Alexander, Donald J

    2007-01-01

    ...) including three gas-turbine grade melt-infiltrated SiC/SiC composites. Modes I and II crack growth resistances, GI and GII, were evaluated at ambient temperature using double cantilever beam and end notched flexure methods, respectively...

  11. Influence of temperature and heat treatment on crack resistance of ceramic tungsten

    International Nuclear Information System (INIS)

    Uskov, E.I.; Babak, A.V.; Bega, N.D.

    1983-01-01

    The effect of testing temperature in the range from 20 to 2000 deg C, and recrystallization annealing at 2200 deg C on crack resistance of ceramic tungsten in vacuum, is investigated. The extension diagrams thus obtained have been treated in accordance with the standard technique. The value of the critical crack loading and the stress intensity coefficient have been determined. Structural changes have been controlled with X-ray structural methods. Crack resistance of tungsten increases in the test temperature range from 20 deg C to Tsub(x) which is connected with the increase of mobility of screw components of dislocation loops. At the temperature more than Tsub(x) the plasticity growth of ceramic tungsten takes place simultaneously with grain boundary embrittlement. Recrystallization annealing at 2200 deg C creates the structure resistant to temperature effect; crack resistance being minimum

  12. LePix—A high resistivity, fully depleted monolithic pixel detector

    International Nuclear Information System (INIS)

    Giubilato, P.; Bisello, D.; Chalmet, P.; Denes, P.; Kloukinas, K.; Mattiazzo, S.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Snoeys, W.; Tindall, C.

    2013-01-01

    The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 μm to obtain back illuminated sensors operated in full depletion mode. By back-processing the chip and collecting the charge from the full substrate it is hence possible to efficiently detect soft X-rays up to 10 keV. Test results from first successfully processed detectors will be presented and discussed

  13. Performance of the First Version of VMM Front-End ASIC with Resistive Micromegas Detectors

    CERN Document Server

    The ATLAS collaboration

    2014-01-01

    This note describes the performance of the first version of a front end ASIC, VMM1, being developed for the Micromegas and sTGC detectors of the ATLAS New Small Wheel (NSW) upgrade. The VMM1 ASIC was designed by the micro-electronics group of the Instrumentation Division of Brookhaven National Laboratory. It contains 64-channels of linear, low noise amplifiers with adaptive feedback, charge amplitude peak detectors with time stamp. It can accept inputs of both polarities, features selectable gain and shaping time and has a built-in calibration system. It is designed to operate with micro-pattern gas detectors providing both trigger and tracking information. The VMM1 was tested during August 2012 test beam campaign at SPS/H6 beam line at CERN using micromegas detectors of the Muon ATLAS MicroMega Activity R&D program. We present here the VMM1 configuration, the software that was developed to achieve its operation, as well as the calibration procedure. Furthermore, we present the analysis performed with the...

  14. Monolithic integration of detectors and transistors on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Batignani, Giovanni; Boscardin, Maurizio; Bosisio, Luciano; Gregori, Paolo; Pancheri, Lucio; Piemonte, Claudio; Ratti, Lodovico; Verzellesi, Giovanni; Zorzi, Nicola

    2007-01-01

    We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed

  15. MT3250BA: a 320×256-50µm snapshot microbolometer ROIC for high-resistance detector arrays

    Science.gov (United States)

    Eminoglu, Selim; Akin, Tayfun

    2013-06-01

    This paper reports the development of a new microbolometer readout integrated circuit (MT3250BA) designed for high-resistance detector arrays. MT3250BA is the first microbolometer readout integrated circuit (ROIC) product from Mikro-Tasarim Ltd., which is a fabless IC design house specialized in the development of monolithic CMOS imaging sensors and ROICs for hybrid photonic imaging sensors and microbolometers. MT3250BA has a format of 320 × 256 and a pixel pitch of 50 µm, developed with a system-on-chip architecture in mind, where all the timing and biasing for this ROIC are generated on-chip without requiring any external inputs. MT3250BA is a highly configurable ROIC, where many of its features can be programmed through a 3-wire serial interface allowing on-the-fly configuration of many ROIC features. MT3250BA has 2 analog video outputs and 1 analog reference output for pseudo-differential operation, and the ROIC can be programmed to operate in the 1 or 2-output modes. A unique feature of MT3250BA is that it performs snapshot readout operation; therefore, the image quality will only be limited by the thermal time constant of the detector pixels, but not by the scanning speed of the ROIC, as commonly found in the conventional microbolometer ROICs performing line-by-line (rolling-line) readout operation. The signal integration is performed at the pixel level in parallel for the whole array, and signal integration time can be programmed from 0.1 µs up to 100 ms in steps of 0.1 µs. The ROIC is designed to work with high-resistance detector arrays with pixel resistance values higher than 250 kΩ. The detector bias voltage can be programmed on-chip over a 2 V range with a resolution of 1 mV. The ROIC has a measured input referred noise of 260 µV rms at 300 K. The ROIC can be used to build a microbolometer infrared sensor with an NETD value below 100 mK using a microbolometer detector array fabrication technology with a high detector resistance value (≥ 250 K

  16. Temperature influence and reset voltage study of bipolar resistive ...

    Indian Academy of Sciences (India)

    Administrator

    which is typical for electronic transportation in a Cu metal. It is indicated ... the defects in the oxide (Choi et al 2005; Waser 2009). Researchers ... and ethanol as starting materials while benzoyl acetone ..... the temperature dependence of Roff.

  17. Host Resistance and Temperature-Dependent Evolution of Aggressiveness in the Plant Pathogen Zymoseptoria tritici

    Directory of Open Access Journals (Sweden)

    Fengping Chen

    2017-06-01

    Full Text Available Understanding how habitat heterogeneity may affect the evolution of plant pathogens is essential to effectively predict new epidemiological landscapes and manage genetic diversity under changing global climatic conditions. In this study, we explore the effects of habitat heterogeneity, as determined by variation in host resistance and local temperature, on the evolution of Zymoseptoria tritici by comparing the aggressiveness development of five Z. tritici populations originated from different parts of the world on two wheat cultivars varying in resistance to the pathogen. Our results show that host resistance plays an important role in the evolution of Z. tritici. The pathogen was under weak, constraining selection on a host with quantitative resistance but under a stronger, directional selection on a susceptible host. This difference is consistent with theoretical expectations that suggest that quantitative resistance may slow down the evolution of pathogens and therefore be more durable. Our results also show that local temperature interacts with host resistance in influencing the evolution of the pathogen. When infecting a susceptible host, aggressiveness development of Z. tritici was negatively correlated to temperatures of the original collection sites, suggesting a trade-off between the pathogen’s abilities of adapting to higher temperature and causing disease and global warming may have a negative effect on the evolution of pathogens. The finding that no such relationship was detected when the pathogen infected the partially resistant cultivars indicates the evolution of pathogens in quantitatively resistant hosts is less influenced by environments than in susceptible hosts.

  18. Pressure and temperature induced electrical resistance change in nano-carbon/epoxy composites

    NARCIS (Netherlands)

    Shen, J. T.; Buschhorn, S. T.; De Hosson, J. Th. M.; Schulte, K.; Fiedler, B.

    2015-01-01

    In this study, we investigate the changes of electrical resistance of the carbon black (CB) and carbon nanotube (CNT) filled epoxy composites upon compression, swelling and temperature variation. For all samples we observe a decrease of electrical resistance under compression, while an increase of

  19. Study on microstructure and high temperature wear resistance of laser cladded nuclear valve clack

    International Nuclear Information System (INIS)

    Zhang Chunliang; Chen Zichen

    2002-01-01

    Laser cladding of Co-base alloy on the nuclear valve-sealing surface are performed with a 5 kW CO 2 transverse flowing laser. The microstructure and the high temperature impact-slide wear resistance of the laser cladded coating and the plasma cladded coating are studied. The results show that the microstructure, the dilution rate and the high temperature impact-slide wear resistance of the laser cladded coating have obvious advantages over the spurt cladding processing

  20. Low-temperature resistance of cyclically strained aluminum

    International Nuclear Information System (INIS)

    Segal, H.R.; Richard, T.G.

    1977-01-01

    An experimental study of the resistance changes in high-purity, reinforced aluminum due to cyclic straining is presently underway. The purpose of this work is to determine the optimum purity of aluminum to be used as a stabilizing material for superconducting magnets used for energy storage. Since pure aluminum has a low yield strength, it is not capable of supporting the stress levels in an energized magnet. Therefore, it has been bonded to a high-strength material--in this case, 6061 aluminum alloy. This bonding permits pure aluminum to be strained cyclically beyond its elastic limit with recovery of large plastic strains upon release of the load. The resistance change in this composite material is less than that of pure, unreinforced aluminum

  1. Very high resolution detection of gamma radiation at room-temperature using P-I-N detectors of CdZnTe and HgCdTe

    Science.gov (United States)

    Hamilton, W. J.; Rhiger, D. R.; Sen, S.; Kalisher, M. H.; James, K.; Reid, C. P.; Gerrish, V.; Baccash, C. O.

    1994-08-01

    High-energy photon detectors have been constructed by engineering and fabricating p-i-n diode structures consisting of bulk CdZnTe and epitaxial HgCdTe. The p-i-n structure was obtained by liquid-phase epitaxial growth of p and n doped HgCdTe layers on 'intrinsic' CdZnTe material about 1mm thick and approximately 25mm square. Curve tracing shows I-V curves with diode characteristics having resistivity above 1011 Omega -cm and leakage current of less than 400 pA to about - 60V reverse bias on a typical test piece approximately 5 x 8 x 1 mm. Spectra of similar test pieces have been obtained at room temperature with various nuclear isotopic sources over the range of 22 keV to 662 keV which show exceptionally high energy resolution. Resolution as good as 1.82% FWHM was obtained for the 356 keV line of 133Ba with a P/V = 3.4. The performance of these detectors combined with contemporary infrared technology capable of fabricating 2D arrays of these II-VI materials opens up manifold exciting applications in astrophysics, medical, industrial, environmental, and defense spectroscopy and imaging.

  2. Operation of Resistive Plate Chamber Detectors with a New Environmentally Friendly Freon

    CERN Document Server

    Lewis, Helen Elizabeth

    2014-01-01

    RPC particle gas detectors at CERN provide a vital element to the physics experiments carried out on the LHC. While their current operation and working gas mixtures are successful, environ- mental and economic factors force a revision of the mixture, specifically the eventual replacement of the current Freon gas R134-a with a newer, less environmentally harmful formulation, namely R1234-yf. The methods and results presented here outline the detector response to the introduction of the new Freon and its behavior under various mixtures. The electronegativity and hence impact on RPC parameters was investigated. It was found that the new Freon gas is indeed electroneg- ative, and suppresses the RPC signal. The mixture was modified to include Argon to increase ionization, and the final results of the operation of the RPC were satisfactory. Further work to refine the mixture for future implementation is necessary.

  3. Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

    Science.gov (United States)

    Brucker, G. J.

    1971-01-01

    The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

  4. Temperature effect on crack resistance and fracture micromechanisms in tungsten-copper pseudoalloy

    International Nuclear Information System (INIS)

    Babak, A.V.; Gopkalo, E.E.; Krasovskij, A.Ya.; Nadezhdin, G.N.; Uskov, E.I.

    1988-01-01

    Results of the mechanical- and-physical study of peculiarities of the tungsten-copper pseudoalloy fracture in the temperature range of 293-2273 K are presented. It is shown that the studied material possesses maximum crack resistance in the vicinity of the upper temperature range boundary of the ductile-brittle transition and minimum resistance to cracks propagation when it contains melted copper. It is established that the peculiarities of changes in crack-resistance correspond to peculiarities of fracture micromechanisms for tungsten-copper pseudoalloy in the studied tempearture range

  5. LePix-A high resistivity, fully depleted monolithic pixel detector

    CERN Document Server

    Giubilato, P; Mugnier, H; Bisello, D; Marchioro, A; Snoeys, W; Denes, P; Pantano, D; Rousset, J; Mattiazzo, S; Kloukinas, K; Potenza, A; Rivetti, A; Chalmet, P

    2013-01-01

    The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 mu m to obtain back illuminated sensors operated in full depletion mode. By back processin...

  6. Development and Characterization of Temperature-resistant Polymer Electrolytes

    DEFF Research Database (Denmark)

    Qingfeng, Li; Hjuler, Hans Aage; Bjerrum, Niels

    1999-01-01

    Acid-doped PBI polymer electrolyte membranes have been developed and characterized for fuel cell applications at temperatures up to 200°C. Electric conductivity as high as 0.13 S/cm is obtained at 160°C at high doping levels. The water osmotic drag coefficient of the polymer electrolyte is found...

  7. Detector for positronium temperature measurements by two-photon angular correlation

    Science.gov (United States)

    Cecchini, G. G.; Jones, A. C. L.; Fuentes-Garcia, M.; Adams, D. J.; Austin, M.; Membreno, E.; Mills, A. P.

    2018-05-01

    We report on the design and characterization of a modular γ-ray detector assembly developed for accurate and efficient detection of coincident 511 keV back-to-back γ-rays following electron-positron annihilation. Each modular detector consists of 16 narrow lutetium yttrium oxyorthosilicate scintillators coupled to a multi-anode Hamamatsu H12700B photomultiplier tube. We discuss the operation and optimization of 511 keV γ-ray detection resulting from testing various scintillators and detector arrangements concluding with an estimate of the coincident 511 keV detection efficiency for the intended experiment and a preliminary test representing one-quarter of the completed array.

  8. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  9. Wear resistance of AISI 304 stainless steel submitted to low temperature plasma carburizing

    Directory of Open Access Journals (Sweden)

    Marcos Antônio Barcelos

    Full Text Available Abstract Despite the AISI 304 stainless steel has high corrosion/oxidation resistance, its tribological properties are poor, being one of the barriers for use in severe wear applications. Thus, there is a wide field for studying technologies that aim to increase the surface hardness and wear resistance of this material. In this work, hardness and wear resistance for AISI 304 stainless steel submitted to the thermochemical treatment by low temperature plasma carburizing (LTPC in a fixed gas mixture composition of 93% H2 and 7% CH4 are presented. Through the evaluation of the carburizing layers, it was possible to observe a substantial improvement in tribological properties after all temperature and time of treatment. This improvement is directly related to the increase of the process variables; among them temperature has a stronger influence on the wear resistance obtained using LTPC process.

  10. Effect of temperature on the multi-gap resistive plate chamber operation

    International Nuclear Information System (INIS)

    Zhao, Y.E.; Wang, X.L.; Liu, H.D.; Chen, H.F.; Li, C.; Wu, J.; Xu, Z.Z.; Shao, M.; Zeng, H.; Zhou, Y.

    2005-01-01

    In order to obtain a quantitative understanding of the influence of temperature on the multi-gap resistive plate chamber (MRPC) operation, we tested the performance of a 6-gap, 6.1x20 cm 2 active area MRPC with cosmic rays at different temperatures. Results of measurements of noise rate, dark current and detection efficiency are presented

  11. Impact of temperatures to Hessian Fly resistance of selected wheat cultivars in the Great Plains Region

    Science.gov (United States)

    Changes in temperature can result in fundamental changes in plant physiology. This study investigated the impact of different temperatures from 14 to 26 °C on the resistance or susceptibility to the Hessian fly, Mayetiola destructor, of selected wheat cultivars that are either currently popular in ...

  12. Online junction temperature measurement via internal gate resistance during turn-on

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Liserre, Marco

    2014-01-01

    A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal...... switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other...

  13. High Momentum Particle Identification Detector The Study of Cesium Iodide Quantum Efficiency Dependency on Substrate Material, Temperature and Quartz Window

    CERN Document Server

    Wisna, Gde Bimananda M

    2014-01-01

    The Cesium Iodide (CsI) is used as a material for detecting Cherenkov radiation produced by high momentum particle in High Momentum Particle Identification Detector (HMPID) at ALICE Experiment at CERN. This work provides investigation and analysis of The Quantum Efficiency (QE) result of CsI which is deposited on five samples substrates such as copper passivated red, copper passivated yellow, aluminium, copper coated with nickel and copper coated with nickel then coated with gold. The measurement of five samples is held under temperature $60^{0}$ C and $25^{0}$ C (room temperature) and also with optical quartz window which can be adjusted to limit the wavelength range which reach the CsI. The result shows there are dependency of substrate, temperature due to enhancement effect and also quartz windows usage on QE of CsI. The results of five samples is then compared and analyzed.

  14. Calorimetric low-temperature detectors for low-energy (E≤1 MeV/amu) heavy ions and their first application in the accelerator mass spectroscopy for trace analysis of 236U

    International Nuclear Information System (INIS)

    Kraft-Bermuth, S.

    2004-01-01

    In the thesis presented here, calorimetric low temperature detectors were for the first time applied in accelerator mass spectrometry (AMS) to determine the isotope ratio of 236 U to 238 U in several samples of natural uranium. The detectors consist of a superconducting aluminium film deposited onto a sapphire absorber which is used as thermistor. An energetic heavy ion deposits its kinetic energy as heat in the absorber. The temperature rise is detected by the resistance change of the superconductor. The AMS experiments were performed at the tandem accelerator VERA of the ''Institut fuer Isotopenforschung und Kernphysik'' of the University of Vienna. In an energy range of 10-60 MeV, a relative energy resolution of ΔE/E=7.10 -3 could be achieved, one order of magnitude better than with conventional ionization detectors. Improving thermal and electronic noise yielded in a second experiment for uranium ions with E=17 MeV a relative energy resolution of ΔE/E=4.6.10 -3 . The energy response of the detectors was linear over the whole energy range and independent of the ion mass. Down to a level of 0.1%, no pulse height defect was observed. With the energy resolution obtained it is possible to determine the isotope ratio of 236 U/ 238 U for several samples of natural uranium. With the resolution achieved it is possible furthermore to apply the detectors in several test experiments for direct mass identification of heavy ions using a combined energy/time of flight measurement. In these first tests, a mass resolution of ΔM/M=(8.5-11.0).10 -3 was achieved. In a first test to apply the detectors for detection of so called ''super heavy elements (Z>=112)'', the large dynamic range allowed to identify the reaction products and their alpha decays simultaneously and time dependent. (orig.)

  15. Temperature rise of the mask-resist assembly during LIGA exposure

    International Nuclear Information System (INIS)

    Ting, Aili

    2004-01-01

    Deep X-ray lithography on PMMA resist is used in the LIGA process. The resist is exposed to synchrotron X-rays through a patterned mask and then is developed in a liquid developer to make high aspect ratio microstructures. The limitations in dimensional accuracies of the LIGA generated microstructure originate from many sources, including synchrotron and X-ray physics, thermal and mechanical properties of mask and resist, and from the kinetics of the developer. This work addresses the thermal analysis and temperature rise of the mask-resist assembly during exposure in air at the Advanced Light Source (ALS) synchrotron. The concern is that dimensional errors generated at the mask and the resist due to thermal expansion will lower the accuracy of the lithography. We have developed a three-dimensional finite-element model of the mask and resist assembly that includes a mask with absorber, a resist with substrate, three metal holders, and a water-cooling block. We employed the LIGA exposure-development software LEX-D to calculate volumetric heat sources generated in the assembly by X-ray absorption and the commercial software ABAQUS to calculate heat transfer including thermal conduction inside the assembly, natural and forced convection, and thermal radiation. at assembly outer and/or inner surfaces. The calculations of assembly maximum temperature. have been compared with temperature measurements conducted at ALS. In some of these experiments, additional cooling of the assembly was produced by forced nitrogen flow ('nitrogen jets') directed at the mask surface. The temperature rise in the silicon mask and the mask holder comes directly from the X-ray absorption, but nitrogen jets carry away a significant portion of heat energy from the mask surface, while natural convection carries away negligibly small amounts energy from the holder. The temperature rise in PMMA resist is mainly from heat conducted from the silicon substrate backward to the resist and from the inner

  16. Resistive wall wakefields of short bunches at cryogenic temperatures

    Directory of Open Access Journals (Sweden)

    G. Stupakov

    2015-03-01

    Full Text Available We present calculations of the longitudinal wakefields at cryogenic temperatures for extremely short bunches, characteristic for modern x-ray free electron lasers. The calculations are based on the equations for the surface impedance in the regime of the anomalous skin effect in metals. This paper extends and complements an earlier analysis of B. Podobedov, Phys. Rev. ST Accel. Beams 12, 044401 (2009. into the region of very high frequencies associated with bunch lengths in the micron range. We study in detail the case of a rectangular bunch distribution for parameters of interest of LCLS-II with a superconducting undulator.

  17. High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

    Science.gov (United States)

    2010-06-02

    description of high temperature oxidation processes of composite ceramic materials of ZrB2 - SiC and ZrB2-SiC-Zr(Mo)Si2 systems up to high (~1300 °C...analysis was applied using MІN-7 mineralogical microscope and a set of standard immersion liquids with the known values of refraction coefficients...2.0 V) corresponds to the simultaneous formation of ZrO2 zirconium dioxide of monoclinic modification and Zr(OH)4 zirconium hydroxide which is

  18. Low pressure chemical vapour deposition of temperature resistant colour filters

    International Nuclear Information System (INIS)

    Verheijen, J.; Bongaerts, P.; Verspui, G.

    1987-01-01

    The possibility to deposit multilayer colour filters, based on optical inference, by means of Low Pressure Chemical Vapour Deposition (LPCVD) was investigated. The filters were made in a standard LPCVD system by alternate deposition of Si/sub 3/N/sub 4/ and SiO/sub 2/ layers. This resulted in filters with excellent colour uniformity on glass and quartz substrates. No difference was measured between theoretically calculated transmission and the transmission of the filters deposited by LPCVD. Temperature treatment at 600 0 C in air air showed no deterioration of filter quality and optical properties

  19. Evaluation of the local temperature of conductive filaments in resistive switching materials

    International Nuclear Information System (INIS)

    Yalon, E; Cohen, S; Gavrilov, A; Ritter, D

    2012-01-01

    The resistive switching effect in metal oxides and other dielectric materials is among the leading future non-volatile memory technologies. Resistive switching is widely ascribed to the formation and rupture of conductive filaments in the oxide, which are generated by temperature-enhanced nano-scale ion migration or other thermal effects. In spite of the central role of the local filament temperature on the switching effect, as well as on the conduction and reliability physics, no measurement methods of the filament temperature are yet available. In this work, we report on a method for evaluating the conducting filament temperature, using a metal–insulator–semiconductor bipolar transistor structure. The filament temperature is obtained by analyzing the thermal excitation rate of electrons from the filament Fermi level into the conduction band of a p-type semiconductor electrode. Measurements were carried out to obtain the conductive filament temperature in hafnia at varying ambient temperatures in the range of 3–300 K. Significant Joule heating of the filament was observed across the entire measured ambient temperature range. The extracted temperatures provide physical insight into the resistive switching effect. (paper)

  20. Effect of Contact Pressure on the Resistance Contact Value and Temperature Changes in Copper Busbar Connection

    Directory of Open Access Journals (Sweden)

    Agus Risdiyanto

    2012-12-01

    Full Text Available This paper discussed the influence of tightness or contacts pressure on copper busbar joints to determine changes in the value of the initial contact resistance and the maximum temperature at the joint due to high current load. The test sample was copper busbar 3 x 30 mm with configuration of bolted overlapping joint. Increasing contact pressure at the joint was measured to find out its effect on the value of contact resistance. The applied pressure was 6 to 36 MPa. Procedure of contact resistance measurement refer to the ASTM B539 standard using four-wire method. The sample subsequently loaded with the current of 350 A for 60 minutes and the maximum temperature at the joint was measured. The result showed that increasing contact pressure at the busbar joint will reduce the contact resistance and maximum temperature. The increase of contact pressure from 6 to 30 MPa causes decreasing contact resistance from 16 μΩ to 11 μΩ. Further increasing of contact pressure more than 30 MPa did not affect the contact resistance significantly. The lowest temperatur of busbar joint of 54°C was reached at a contact pressure of 36 Mpa.

  1. Development and evaluation of a HEPA filter for increased strength and resistance to elevated temperature

    International Nuclear Information System (INIS)

    Gilbert, H.; Bergman, W.; Fretthold, J.K.

    1992-01-01

    We have developed an improved HEPA filter for increased strength and resistance to elevated temperature to improve the reliability of HEPA filters under accident conditions. The improvements to the HEPA filter consist of a silicone rubber sealant and a new HEPA medium reinforced with a glass cloth. Several prototype filters were built and evaluated for temperature and pressure resistance and resistance to rough handling. The temperature resistance test consisted of exposing the HEPA filter to 1,000 scan at 700 degrees F for five minutes. The pressure resistance test consisted of exposing the HEPA filter to a differential pressure of 10 in. w.g. using a water saturated air flow at 95 degrees F. For the rough handling test, we used a vibrating machine designated the Q110. DOP filter efficiency tests were performed before and after each of the environmental tests. In addition to following the standard practice of using a separate new filter for each environmental test, we also subjected the same filter to the elevated temperature test followed by the pressure resistance test. The efficiency test results show that the improved HEPA filter is significantly better than the standard HEPA filter

  2. Development and evaluation of a HEPA filter for increased strength and resistance to elevated temperature

    International Nuclear Information System (INIS)

    Gilbert, H.; Bergman, W.; Fretthold, J.K.

    1993-01-01

    We have completed a preliminary study of an improved HEPA filter for increased strength and resistance to elevated temperature to improve the reliability of the standard deep pleated HEPA filter under accident conditions. The improvements to the HEPA filter consist of a silicone rubber sealant and a new HEPA medium reinforced with a glass cloth. Three prototype filters were built and evaluated for temperature and pressure resistance and resistance to rough handling. The temperature resistance test consisted of exposing the HEPA filter to 1,000 scan (1,700 m 3 /hr) at 700 degrees F (371 degrees C) for five minutes.The pressure resistance test consisted of exposing the HEPA filter to a differential pressure of 10 in. w.g. (2.5 kPa) using a water saturated air flow at 95 degrees F (35 degrees C). For the rough handling test, we used a vibrating machine designated the Q110. DOP filter efficiency tests were performed before and after each of the environmental tests. In addition to following the standard practice of using a separate new filter for each environmental test, we also subjected the same filter to the elevated temperature test followed by the pressure resistance test. The efficiency test results show that the improved HEPA filter is significantly better than the standard HEPA filter. Further studies are recommended to evaluate the improved HEPA filter and to assess its performance under more severe accident conditions

  3. Temperature-dependent resistance switching in SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian-kun [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ma, Chao; Ge, Chen, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn; Gu, Lin; He, Xu; Zhou, Wen-jia; Lu, Hui-bin [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Jin, Kui-juan, E-mail: kjjin@iphy.ac.cn, E-mail: gechen@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China); Zhang, Qing-hua [School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China); Yang, Guo-zhen [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-06-13

    Resistance switching phenomena were studied by varying temperature in SrTiO{sub 3} single crystal. The resistance hysteresis loops appear at a certain temperature ranging from 340 K to 520 K. With the assistance of 375 nm ultraviolet continuous laser, the sample resistance is greatly reduced, leading to a stable effect than that in dark. These resistance switching phenomena only exist in samples with enough oxygen vacancies, which is confirmed by spherical aberration-corrected scanning transmission electron microscopy measurements, demonstrating an important role played by oxygen vacancies. At temperatures above 340 K, positively charged oxygen vacancies become mobile triggered by external electric field, and the resistance switching effect emerges. Our theoretical results based on drift-diffusion model reveal that the built-in field caused by oxygen vacancies can be altered under external electric field. Therefore, two resistance states are produced under the cooperative effect of built-in field and external field. However, the increasing mobility of oxygen vacancies caused by higher temperature promotes internal electric field to reach equilibrium states quickly, and suppresses the hysteresis loops above 420 K.

  4. A fully automated temperature-dependent resistance measurement setup using van der Pauw method

    Science.gov (United States)

    Pandey, Shivendra Kumar; Manivannan, Anbarasu

    2018-03-01

    The van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film resistance measurement setup using the VDP method with the capability of precisely measuring a wide range of thin film resistances from few mΩ up to 10 GΩ under controlled temperatures from room-temperature up to 600 °C. The setup utilizes a robust, custom-designed switching network board (SNB) for measuring current-voltage characteristics automatically at four different source-measure configurations based on the VDP method. Moreover, SNB is connected with low noise shielded coaxial cables that reduce the effect of leakage current as well as the capacitance in the circuit thereby enhancing the accuracy of measurement. In order to enable precise and accurate resistance measurement of the sample, wide range of sourcing currents/voltages are pre-determined with the capability of auto-tuning for ˜12 orders of variation in the resistances. Furthermore, the setup has been calibrated with standard samples and also employed to investigate temperature dependent resistance (few Ω-10 GΩ) measurements for various chalcogenide based phase change thin films (Ge2Sb2Te5, Ag5In5Sb60Te30, and In3SbTe2). This setup would be highly helpful for measurement of temperature-dependent resistance of wide range of materials, i.e., metals, semiconductors, and insulators illuminating information about structural change upon temperature as reflected by change in resistances, which are useful for numerous applications.

  5. SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

    Energy Technology Data Exchange (ETDEWEB)

    Ganesan, B; Prakasarao, A; Singaravelu, G [Anna University, Chennai, TamilNadu (India); Palraj, T; Rai, R [Dr. Rai Memorial Cancer Institute, Chennai, TamilNadu (India)

    2016-06-15

    Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

  6. SU-F-T-474: Evaluation of Dose Perturbation, Temperature and Sensitivity Variation With Accumulated Dose of MOSFET Detector

    International Nuclear Information System (INIS)

    Ganesan, B; Prakasarao, A; Singaravelu, G; Palraj, T; Rai, R

    2016-01-01

    Purpose: The use of mega voltage gamma and x-ray sources with their skin sparring qualities in radiation therapy has been a boon in relieving patient discomfort and allowing high tumor doses to be given with fewer restrictions due to radiation effects in the skin. However, high doses given to deep tumors may require careful consideration of dose distribution in the buildup region in order to avoid irreparable damage to the skin. Methods: To measure the perturbation of MOSFET detector in Co60,6MV and 15MV the detector was placed on the surface of the phantom covered with the brass build up cap. To measure the effect of temperature the MOSFET detector was kept on the surface of hot water polythene container and the radiation was delivere. In order to measure the sensitivity variation with accumulated dose Measurements were taken by delivering the dose of 200 cGy to MOSFET until the MOSFET absorbed dose comes to 20,000 cGy Results: the Measurement was performed by positioning the bare MOSFET and MOSFET with brass build up cap on the top surface of the solid water phantom for various field sizes in order to find whether there is any attenuation caused in the dose distribution. The response of MOSFET was monitored for temperature ranging from 42 degree C to 22 degree C. The integrated dose dependence of MOSFET dosimeter sensitivity over different energy is not well characterized. This work investigates the dual-bias MOSFET dosimeter sensitivity response to 6 MV and 15 MV beams. Conclusion: From this study it is observed that unlike diode, bare MOSFET does not perturb the radiation field.. It is observed that the build-up influences the temperature dependency of MOSFET and causes some uncertainty in the readings. In the case of sensitivity variation with accumulated dose MOSFET showed higher sensitivity with dose accumulation for both the energies.

  7. Characterizing Uncertainty In Electrical Resistivity Tomography Images Due To Subzero Temperature Variability

    Science.gov (United States)

    Herring, T.; Cey, E. E.; Pidlisecky, A.

    2017-12-01

    Time-lapse electrical resistivity tomography (ERT) is used to image changes in subsurface electrical conductivity (EC), e.g. due to a saline contaminant plume. Temperature variation also produces an EC response, which interferes with the signal of interest. Temperature compensation requires the temperature distribution and the relationship between EC and temperature, but this relationship at subzero temperatures is not well defined. The goal of this study is to examine how uncertainty in the subzero EC/temperature relationship manifests in temperature corrected ERT images, especially with respect to relevant plume parameters (location, contaminant mass, etc.). First, a lab experiment was performed to determine the EC of fine-grained glass beads over a range of temperatures (-20° to 20° C) and saturations. The measured EC/temperature relationship was then used to add temperature effects to a hypothetical EC model of a conductive plume. Forward simulations yielded synthetic field data to which temperature corrections were applied. Varying the temperature/EC relationship used in the temperature correction and comparing the temperature corrected ERT results to the synthetic model enabled a quantitative analysis of the error of plume parameters associated with temperature variability. Modeling possible scenarios in this way helps to establish the feasibility of different time-lapse ERT applications by quantifying the uncertainty associated with parameter(s) of interest.

  8. Design, Qualification and Integration Testing of the High-Temperature Resistance Temperature Device for Stirling Power System

    Science.gov (United States)

    Chan, Jack; Hill, Dennis H.; Elisii, Remo; White, Jonathan R.; Lewandowski, Edward J.; Oriti, Salvatore M.

    2015-01-01

    The Advanced Stirling Radioisotope Generator (ASRG), developed from 2006 to 2013 under the joint sponsorship of the United States Department of Energy (DOE) and National Aeronautics and Space Administration (NASA) to provide a high-efficiency power system for future deep space missions, employed Sunpower Incorporated's Advanced Stirling Convertors (ASCs) with operating temperature up to 840 C. High-temperature operation was made possible by advanced heater head materials developed to increase reliability and thermal-to-mechanical conversion efficiency. During a mission, it is desirable to monitor the Stirling hot-end temperature as a measure of convertor health status and assist in making appropriate operating parameter adjustments to maintain the desired hot-end temperature as the radioisotope fuel decays. To facilitate these operations, a Resistance Temperature Device (RTD) that is capable of high-temperature, continuous long-life service was designed, developed and qualified for use in the ASRG. A thermal bridge was also implemented to reduce the RTD temperature exposure while still allowing an accurate projection of the ASC hot-end temperature. NASA integrated two flight-design RTDs on the ASCs and assembled into the high-fidelity Engineering Unit, the ASRG EU2, at Glenn Research Center (GRC) for extended operation and system characterization. This paper presents the design implementation and qualification of the RTD, and its performance characteristics and calibration in the ASRG EU2 testing.

  9. Improving Erosion Resistance of Plasma-Sprayed Ceramic Coatings by Elevating the Deposition Temperature Based on the Critical Bonding Temperature

    Science.gov (United States)

    Yao, Shu-Wei; Yang, Guan-Jun; Li, Cheng-Xin; Li, Chang-Jiu

    2018-01-01

    Interlamellar bonding within plasma-sprayed coatings is one of the most important factors dominating the properties and performance of coatings. The interface bonding between lamellae significantly influences the erosion behavior of plasma-sprayed ceramic coatings. In this study, TiO2 and Al2O3 coatings with different microstructures were deposited at different deposition temperatures based on the critical bonding temperature concept. The erosion behavior of ceramic coatings was investigated. It was revealed that the coatings prepared at room temperature exhibit a typical lamellar structure with numerous unbonded interfaces, whereas the coatings deposited at the temperature above the critical bonding temperature present a dense structure with well-bonded interfaces. The erosion rate decreases sharply with the improvement of interlamellar bonding when the deposition temperature increases to the critical bonding temperature. In addition, the erosion mechanisms of ceramic coatings were examined. The unbonded interfaces in the conventional coatings act as pre-cracks accelerating the erosion of coatings. Thus, controlling interlamellar bonding formation based on the critical bonding temperature is an effective approach to improve the erosion resistance of plasma-sprayed ceramic coatings.

  10. Performance Studies of Resistive Micromegas Detectors for the Upgrade of the ATLAS Muon Spectrometer

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00387450

    2017-01-01

    With the high luminosity upgrade of the LHC the ATLAS Muon spectrometer will face increased particle rates, requiring an upgrade of the innermost end-cap detectors with a high-rate capable technology. Micromegas have been chosen as main tracking technology for this New Small Wheel upgrade. In an intense R$\\&$D and prototype phase the technology has proven to meet the stringent performance requirements of highly efficient particle detection with better than 100$\\rm{\\mu m}$ spatial resolution, independent of the track incidence angle up to 32$^\\circ$, in a magnetic field B $\\leq$ 0.3 T and at background hit rate of up to 15kHz/cm$^2$.

  11. Optical scatterometry system for detecting specific line edge roughness of resist gratings subjected to detector noises

    International Nuclear Information System (INIS)

    Lee, Yen-Min; Li, Jia-Han; Cheng, Hsin-Hung; Wang, Fu-Min; Shen, Yu-Tian; Tsai, Kuen-Yu; Shieh, Jason J; Chen, Alek C

    2014-01-01

    The Fourier scatterometry model was used to measure the ZEP 520A electron beam resist lines with specific line edge roughness (LER). By obtaining the pupils via an objective lens, the angle-resolved diffraction spectrum was collected efficiently without additional mechanical scanning. The concavity of the pupil was considered as the weight function in specimen recognition. A series of white noises was examined in the model, and the tolerant white noise levels for different system numerical apertures (NAs) were reported. Our numerical results show that the scatterometry model of a higher NA can identify a target with a higher white noise level. Moreover, the fabricated ZEP 520A electron beam resist gratings with LER were measured by using our model, and the fitting results were matched with scanning electron microscope measurements. (paper)

  12. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  13. Normal state resistance and low temperature magnetoresistance of superconducting cables for accelerator magnets

    International Nuclear Information System (INIS)

    Sampson, W.B.; Garber, M.; Ghosh, A.K.

    1988-01-01

    The normal state resistivity of the superconducting NbTi cable used in accelerator magnets is usually specified by the resistance per unit length at room temperature (295 K) and the residual resistance ratio (RRR). Using these resistance parameters, the amount of copper in the multifilamentary wire can be calculated. This method is consistent with the traditional etch and weigh technique, and as such is a alternative and convenient way of specifying the copper to superconductor ratio. In principle the magnetoresistance can be calculated from the RRR and the ''Kohler Plot'', for copper. In practice however, measurements of magnetoresistance for a wide variety of SSC inner cables show considerable disagreement with calculation. In this paper the magnetoresistance data on cables with RRR ranging from 50 to 175 are analyzed taking into account the conductor geometry and the effect of the small interfilamentary spacing on the resistivity of copper. 8 refs., 5 figs., 1 tab

  14. Semiconductor resistance thermometer for the temperature range 300-0.3 K

    International Nuclear Information System (INIS)

    Zinov'eva, K.N.; Zarubin, L.I.; Nemish, I.Yu.; Vorobkalo, F.M.; Boldarev, S.T.; AN Ukrainskoj SSR, Kiev. Inst. Poluprovodnikov)

    1979-01-01

    Thermometric characteristics of semiconductor resistor thermometers for the temperature range from 300 to 0.3 K and from 77 to 0.3 K are given. Temperature dependence of thermometer resistances in the 300-1.3 K range was measured in cryostats with pumping-out of N 2 , H 2 and 4 He. For measurements below 1.3 K use was made of a 3 H- 4 He dissolving cryostat. The accuracy of measuring temperatures in the 1.3-0.3 K range is not below +-0.003 K, the error in determining thermometer resistances does not exceed 1%. The analysis of obtained thermometric characteristics of several series of semiconductor resistance thermometers showed that observed insignificant spread of resistances of thermometers in one series and identity of characteristics allows them to be used without preliminary calibration for relatively coarse measurements in the range from 3O0 to 0.3 K. Besides, it has been found that in the 4.2-0.3 K range the thermometric characteristics represent a straight line in the lgR-Tsup(-n) coordinates, where R is the thermometer resistance, T is the temperature and n=0.5. Thus, the thermometers of the same series can be calibrated only in 2 or 3 reference point measurements

  15. Resistivity and Hall voltage in gold thin films deposited on mica at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Bahamondes, Sebastián; Donoso, Sebastián; Ibañez-Landeta, Antonio; Flores, Marcos [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Blanco Encalada 2008, Santiago (Chile); Henriquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2015-03-30

    Highlights: • We determined the 4 K thickness dependence of resistivity for a family of gold thin films. • We determined the thickness dependence of resistivity during the growth process. • Both behaviors are well represented by the Mayadas–Shatzkes theory. • We determined Hall tangent and Hall resistance at 4 K and up to 4.5 T. • Hall mobility is always higher than the drift mobility. - Abstract: We report the thickness dependence of the resistivity measured at 4 K of gold films grown onto mica at room temperature (RT), for thickness ranging from 8 to 100 nm. This dependence was compared to the one obtained for a sample during its growth process at RT. Both behaviors are well represented by the Mayadas–Shatzkes theory. Using this model, we found comparable contributions of electron surface and electron grain boundary scattering to the resistivity at 4 K. Hall effect measurements were performed using a variable transverse magnetic field up to 4.5 T. Hall tangent and Hall resistance exhibit a linear dependence on the magnetic field. For this magnetic field range, the Hall mobility is always larger than the drift mobility. This result is explained through the presence of the above-mentioned scattering mechanisms acting on the galvanomagnetic coefficients. In addition, we report the temperature dependence of the resistivity between 4 and 70 K.

  16. Effects of ion temperature fluctuations on the stability of resistive ballooning modes

    International Nuclear Information System (INIS)

    Singh, R.; Nordman, H.; Jarmen, A.; Weiland, J.

    1996-01-01

    The influence of ion temperature fluctuations on the stability of resistive drift- and ballooning-modes is investigated using a two-fluid model. The Eigenmode equations are derived and solved analytically in a low beta model equilibrium. Parameters relevant to L-mode edge plasmas from the Texas Experimental Tokamak are used. The resistive modes are found to be destabilized by ion temperature fluctuations over a broad range of mode numbers. The scaling of the growth rate with magnetic shear and mode number is elucidated. 13 refs, 4 figs

  17. Monitoring of high temperature zone by resistivity tomography during in-situ heater test in sedimentary soft rocks

    International Nuclear Information System (INIS)

    Kubota, Kenji; Suzuki, Koichi; Ikenoya, Takafumi; Takakura, Nozomu; Tani, Kazuo

    2008-01-01

    In-situ heater test has been conducted to evaluate the influence of high temperature in an underground facility at a depth of 50 m. Resistivity monitoring is thought to be effective to map the extent of the high temperature zone. So we have conducted resistivity tomography during the heater test. As a result, low resistivity zone was appeared near the heated area as starting the heating, and the zone was expanded. Resistivity of rock is proportional to resistivity of pore water. It is known that pore water resistivity decreases as the temperature rise. This suggests that high temperature zone is detected and spatial distribution of temperature can be mapped by resistivity tomography. (author)

  18. Machine-operated low temperature system for cooling a germanium detector at great depths of the sea

    International Nuclear Information System (INIS)

    Bruederle, F.; Hain, K.; Huebener, J.; Schloss, F.

    1978-07-01

    The report outlines the conceptual design and technical implementation phases of a very reliable low temperature system for long-time cooling of a germanium detector at great depths of the sea. The approach chosen as the solution involves the choise of a proven commercial small-scale refrigeration unit operation by the Gifford-Mc Mahon process, which is modified so as to suit special requirements. Testing for the severe conditions of use is carried out on a jarring table for the critical components and on a rolling test rig for the whole low temperature machine so as to simulate the stresses imposed by ships and high seas. The cooling system designed in this way has demonstrated its full functioning capability in a test conducted at sea. (orig.) 891 HP [de

  19. Diffusion barrier coatings for high temperature corrosion resistance of advanced carbon/carbon composites

    International Nuclear Information System (INIS)

    Singh Raman, K.S.

    2000-01-01

    Carbon possesses an excellent combination of mechanical and thermal properties, viz., excellent creep resistance at temperatures up to 2400 deg C in non-oxidizing environment and a low thermal expansion coefficient. These properties make carbon a potential material for very high temperature applications. However, the use of carbon materials at high temperatures is considerably restricted due to their extremely poor oxidation resistance at temperatures above 400 deg C. The obvious choice for improving high temperature oxidation resistance of such materials is a suitable diffusion barrier coating. This paper presents an overview of recent developments in advanced diffusion- and thermal-barrier coatings for ceramic composites, with particular reference to C/C composites. The paper discusses the development of multiphase and multi-component ceramic coatings, and recent investigations on the oxidation resistance of the coated C/C composites. The paper also discusses the cases of innovative engineering solutions for traditional problems with the ceramic coatings, and the scope of intelligent processing in developing coatings for the C/C composites. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  20. Numerical simulation of temperature's sensitivity of chamfer hole's resistance on hydraulic step cylinder

    International Nuclear Information System (INIS)

    Jinhua, Wang; Hanliang, Bo; Wenxiang, Zheng; Jinnong, Yang

    2003-01-01

    The control rod drive is a very important device for controlling nuclear reactor startup, operation, shut down, and power change. The ability of the control rod drive to move safely and reliably directly relates to reactor safety. The Hydraulic Control Rod Drive System (HCRDS) is a new type of control rod drive system developed by the Institute of Nuclear Energy Technology (INET) of Tsinghua University for Nuclear Heating Reactors. The HCRDS, designed using the hydrodynamic principle, has many advantages, including having the structure complete in the vessel, no possible ejection accident, short drive line, simple movable parts structure and safe shutdown during accidents. The hydraulic step cylinder is the key part for the HCRDS. In the process of reactor startup, the variation of temperature could make the water's density and viscosity change, and the force from the water flow would change accordingly. These factors could influence the performance of the hydraulic step cylinder. In this paper, the temperature sensitivity of the chamfer hole's resistance in the hydraulic step cylinder was studied with the Computational Fluid Dynamics (CFD) program CFX5.5. The results were satisfactory: the discipline of variation of the chamfer hole's resistance with the outer tube's position was the same at different temperatures, the discrepancy of the chamfer hole's resistance was small for the same position at different temperatures, the chamfer hole's resistance decreased gradually with the increase of temperature, and the decrease extent was relatively small

  1. High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector

    Science.gov (United States)

    Ting, David Z.; Soibel, Alexander; Höglund, Linda; Hill, Cory J.; Keo, Sam A.; Fisher, Anita; Gunapala, Sarath D.

    2016-09-01

    The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.

  2. A portable borehole temperature logging system using the four-wire resistance method

    Science.gov (United States)

    Erkan, Kamil; Akkoyunlu, Bülent; Balkan, Elif; Tayanç, Mete

    2017-12-01

    High-quality temperature-depth information from boreholes with a depth of 100 m or more is used in geothermal studies and in studies of climate change. Electrical wireline tools with thermistor sensors are capable of measuring borehole temperatures with millikelvin resolution. The use of a surface readout mode allows analysis of the thermally conductive state of a borehole, which is especially important for climatic and regional heat flow studies. In this study we describe the design of a portable temperature logging tool that uses the four-wire resistance measurement method. The four-wire method enables the elimination of cable resistance effects, thus allowing millikelvin resolution of temperature data at depth. A preliminary two-wire model of the system is also described. The portability of the tool enables one to collect data from boreholes down to 300 m, even in locations with limited accessibility.

  3. Assembly and Characterization of Resistive Plate Chambers in India for the CMS Detector

    CERN Document Server

    AUTHOR|(CDS)2084269

    2016-01-01

    The Compact Muon Solenoid (CMS) experiment is a general purpose detector being operated at Large Hadron Collider (LHC) facility at CERN. The RE4 upgrade project was envisaged to improve the Level-1 trigger efficiency in the forward region, when LHC would run at its full designed energy and luminosity after the first Long Shutdown (LS-1, 2013-2014). About 200 RPCs were built for the upgrade at three assembly sites in India, CERN and Ghent. India contributed to 50, RE4/2 RPCs along with 200 Cu-cooling units for the entire upgrade for which the assembly and characterization of RPCs was carried out jointly by Nuclear Physics Division-BARC and Panjab University-Chandigarh. The gas-gaps after their arrival from KODEL, South Korea, underwent mechanical tests for leak and popped spacers, followed by electrical tests for long term monitoring of leakage currents. After the assembly, each RPC was evaluated for its efficiency, cluster size, noise and strip profiles. The Cu-cooling units build at BARC were also tested acc...

  4. Fracture Resistances of Y_2O_3 Particle Dispersion Strengthened 9Cr Steel at Room Temperature and High Temperatures

    International Nuclear Information System (INIS)

    Yoon, Ji Hyun; Kang, Suk Hoon; Lee, Yongbok; Kim, Sung Soo

    2012-01-01

    The fracture resistance and tensile properties of Y_2O_3 oxide dispersion strengthened steel containing 9 wt% Cr (9Cr-ODS) were measured at various temperatures up to 700°C. The fracture characteristics were compared with those of commercial E911 ferritic/martensitic steel. The strength of 9Cr-ODS was at least 30% higher than that of E911 steel at the test temperatures below 500°C. The strength difference between the two materials was almost diminished at 700°C. 9Cr-ODS showed cleavage fracture behavior at room temperature and unstable crack growth behaviors at 300°C and 500°C. The J-R fracture resistance of 9Cr-ODS was much lower than that of E911 steel at all temperatures. It was deduced that the coarse Cr_2O_3 particles that were formed during the alloying process provided the crack initiation sites of cleavage fracture in 9Cr-ODS.

  5. Aluminide protective coatings on high–temperature creep resistant cast steel

    OpenAIRE

    J. Kubicki; A. Kochmańska

    2009-01-01

    This paper presents the results of research on aluminide protective coatings manufactured on high–temperature creep resistant cast steel. The main purpose of these coatings is protection against the high temperature corrosion, especially at high carburizing potential atmosphere. Coatings were obtained on cast steel type G–XNiCrSi36–18 with the following methods: pack cementation, paste method, cast method and slurry cementation. The phase composition, thickness and morphology of coatings were...

  6. Reversible Dissolution of Microdomains in Detergent-Resistant Membranes at Physiological Temperature

    OpenAIRE

    Cremona, A.; Orsini, F.; Corsetto, P.A.; Hoogenboom, B.W.; Rizzo, A.M.

    2015-01-01

    The formation of lipid microdomains ("rafts") is presumed to play an important role in various cellular functions, but their nature remains controversial. Here we report on microdomain formation in isolated, detergent-resistant membranes from MDA-MB-231 human breast cancer cells, studied by atomic force microscopy (AFM). Whereas microdomains were readily observed at room temperature, they shrunk in size and mostly disappeared at higher temperatures. This shrinking in microdomain size was acco...

  7. Mercuric iodide room-temperature array detectors for gamma-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Patt, B. [Xsirius, Inc, Camarillo, CA (United States)

    1994-11-15

    Significant progress has been made recently in the development of mercuric iodide detector arrays for gamma-ray imaging, making real the possibility of constructing high-performance small, light-weight, portable gamma-ray imaging systems. New techniques have been applied in detector fabrication and then low noise electronics which have produced pixel arrays with high-energy resolution, high spatial resolution, high gamma stopping efficiency. Measurements of the energy resolution capability have been made on a 19-element protypical array. Pixel energy resolutions of 2.98% fwhm and 3.88% fwhm were obtained at 59 keV (241-Am) and 140-keV (99m-Tc), respectively. The pixel spectra for a 14-element section of the data is shown together with the composition of the overlapped individual pixel spectra. These techniques are now being applied to fabricate much larger arrays with thousands of pixels. Extension of these principles to imaging scenarios involving gamma-ray energies up to several hundred keV is also possible. This would enable imaging of the 208 keV and 375-414 keV 239-Pu and 240-Pu structures, as well as the 186 keV line of 235-U.

  8. Investigation of Superficial Resistance of Different Purity Copper at Boiling Nitrogen Temperature Depending on Treatment of Current-Conducting Layer

    International Nuclear Information System (INIS)

    Kutovoj, V.A.; Nikolaenko, A.A.; Stoev, P.I.

    2007-01-01

    Results of this scientific work show influence of annealing temperature and deformation degree of initial MOB copper and after electron beam refining on superficial resistance at temperature of boiling nitrogen. It is shown, that 30 % deformation and annealing in 873...923 K temperature range results in appreciable reduction of superficial resistance at the investigated samples of copper. The lowest values of superficial resistance after thermal and mechanical treatment were observed in the samples after electron beam refinement

  9. Position detector

    International Nuclear Information System (INIS)

    Hayakawa, Toshifumi.

    1985-01-01

    Purpose: To enable to detect the position of an moving object in a control rod position detector, stably in a digital manner at a high accuracy and free from the undesired effects of circumstantial conditions such as the reactor temperature. Constitution: Coils connected in parallel with each other are disposed along the passage of a moving object and variable resistors and relays are connected in series with each of the coils respectively. Light emitting diodes is connected in series with the contacts of the respective relays. The resistance value of the variable resistors are adjusted depending on the changes in the circumstantial conditions and temperature distribution upon carrying out the positional detection. When the object is inserted into a coils, the relevant relay is deenergized, by which the relay contacts are closed to light up the diode. In the same manner, as the object is successively inserted into the coils, the diodes are lighted-up successively thereby enabling highly accurate and stable positional detection in a digital manner, free from the undesired effects of the circumstantial conditions. (Horiuchi, T.)

  10. Rise time of voltage pulses in NbN superconducting single photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, K. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics, 34 Tallinskaya St., 109028 Moscow (Russian Federation); Divochiy, A. V.; Karpova, U. V.; Morozov, P. V. [CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Vakhtomin, Yu. B.; Seleznev, V. A. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); CJSC “Superconducting Nanotechnology” (Scontel), 5/22-1 Rossolimo St., 119021 Moscow (Russian Federation); Sidorova, M. V. [Moscow State Pedagogical University, 1 Malaya Pirogovskaya St., 119435 Moscow (Russian Federation); Zotova, A. N.; Vodolazov, D. Yu. [Institute for Physics of Microstructure, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 23 Gagarin Avenue, 603950 Nizhny Novgorod (Russian Federation)

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  11. Resistive switching characteristics of interfacial phase-change memory at elevated temperature

    Science.gov (United States)

    Mitrofanov, Kirill V.; Saito, Yuta; Miyata, Noriyuki; Fons, Paul; Kolobov, Alexander V.; Tominaga, Junji

    2018-04-01

    Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the high-resistance (RESET) state in an iPCM device drops sharply at around 150 °C to a low-resistance (SET) state, which differs by ˜400 Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

  12. The effects of temperature on the crystalline properties and resistant starch during storage of white bread.

    Science.gov (United States)

    Sullivan, William R; Hughes, Jeff G; Cockman, Russell W; Small, Darryl M

    2017-08-01

    Resistant starch (RS) can form during storage of foods, thereby bestowing a variety of potential health benefits. The purpose of the current study has been to determine the influence of storage temperature and time on the crystallinity and RS content of bread. Loaves of white bread were baked and stored at refrigeration, frozen and room temperatures with analysis over a period of zero to seven days. RS determination and X-ray diffraction (XRD) were used to evaluate the influence of storage temperature and time on total crystallinity and RS content. The rate of starch recrystallisation was affected by storage temperature and time, where refrigeration temperatures accelerated RS formation and total crystallinity more than storage time at both frozen and room temperature. A strong statistical model has been established between RS formation in bread and XRD patterns, having a 96.7% fit indicating the potential of XRD to measure RS concentrations. Copyright © 2017 Elsevier Ltd. All rights reserved.

  13. The noise analysis and optimum filtering techniques for a two-dimensional position sensitive orthogonal strip gamma ray detector employing resistive charge division

    International Nuclear Information System (INIS)

    Gerber, M.S.; Muller, D.W.

    1976-01-01

    The analysis of an orthogonal strip, two-dimensional position sensitive high purity germanium gamma ray detector is discussed. Position sensitivity is obtained by connecting each electrode strip on the detector to a resistor network. Charge, entering the network, divides in relation to the resistance between its entry point and the virtual earth points of the charge sensitive preamplifiers located at the end of each resistor network. The difference of the voltage pulses at the output of each preamplifier is proportional to the position at which the charge entered the resistor network and the sum of the pulse is proportional to the energy of the detected gamma ray. The analysis and spatial noise resolution is presented for this type of position sensitive detector. The results of the analysis show that the position resolution is proportional to the square root of the filter amplifier's output pulse time constant and that for energy measurement the resolution is maximized at the filter amplifier's noise corner time constant. The design of the electronic noise filtering system for the prototype gamma ray camera was based on the mathematical energy and spatial resolution equations. For the spatial channel a Gaussian trapezoidal filtering system was developed. Gaussian filtering was used for the energy channel. The detector noise model was verified by taking rms noise measurements of the filtered energy and spatial pulses from resistive readout charge dividing detectors. These measurements were within 10% of theory. (Auth.)

  14. Photosynthesis of crop plants as influenced by light, carbon dioxide, temperature, and stomatal diffusion resistance

    NARCIS (Netherlands)

    Gaastra, P.

    1959-01-01

    The effect was estimated of light intensity, leaf temperature, and C0 2 concentration on photosynthetic rate in leaves of crop plants. The potential capacities of photochemical and biochemical processes and of C0 2 transport were compared.

    Resistance to C0 2

  15. New high-temperature flame-resistant resin matrix for RP/C

    Science.gov (United States)

    Kourtides, D. A.

    1981-01-01

    The processing parameters of graphite composites utilizing graphite fabric and epoxy or other advanced thermoset and thermoplastic resins as matrices are discussed. The evaluated properties include anaerobic char yield, limiting oxygen index, smoke evolution, moisture absorption, and high-temperature mechanical properties. It is shown that graphite composites having the highest char yield exhibit optimum fire-resistant properties.

  16. Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

    NARCIS (Netherlands)

    Gomes, H.L.; Rocha, P.R.F.; Kiazadeh, A.; Leeuw, de D.M.; Meskers, S.C.J.

    2011-01-01

    Metal-oxide polymer diodes exhibit non-volatile resistive switching. The current–voltage characteristics have been studied as a function of temperature. The low-conductance state follows a thermally activated behaviour. The high-conductance state shows a multistep-like behaviour and below 300 K an

  17. Dependent of electrical resistivity of thin wire on magnetic field and temperature

    International Nuclear Information System (INIS)

    Sadeghi, E.; Zare, M.

    2006-01-01

    Variation of electrical resistivity of Bismuth nano wire versus magnetic field the and temperature are considered. We study the size effect and surface scattering of the carrier in thin wire for systems with ellipsoidal Fermi surfaces. Results are in good agreement with experimental points

  18. Universal linear-temperature resistivity: possible quantum diffusion transport in strongly correlated superconductors.

    Science.gov (United States)

    Hu, Tao; Liu, Yinshang; Xiao, Hong; Mu, Gang; Yang, Yi-Feng

    2017-08-25

    The strongly correlated electron fluids in high temperature cuprate superconductors demonstrate an anomalous linear temperature (T) dependent resistivity behavior, which persists to a wide temperature range without exhibiting saturation. As cooling down, those electron fluids lose the resistivity and condense into the superfluid. However, the origin of the linear-T resistivity behavior and its relationship to the strongly correlated superconductivity remain a mystery. Here we report a universal relation [Formula: see text], which bridges the slope of the linear-T-dependent resistivity (dρ/dT) to the London penetration depth λ L at zero temperature among cuprate superconductor Bi 2 Sr 2 CaCu 2 O 8+δ and heavy fermion superconductors CeCoIn 5 , where μ 0 is vacuum permeability, k B is the Boltzmann constant and ħ is the reduced Planck constant. We extend this scaling relation to different systems and found that it holds for other cuprate, pnictide and heavy fermion superconductors as well, regardless of the significant differences in the strength of electronic correlations, transport directions, and doping levels. Our analysis suggests that the scaling relation in strongly correlated superconductors could be described as a hydrodynamic diffusive transport, with the diffusion coefficient (D) approaching the quantum limit D ~ ħ/m*, where m* is the quasi-particle effective mass.

  19. Contact Resistance of Tantalum Coatings in Fuel Cells and Electrolyzers using Acidic Electrolytes at Elevated Temperatures

    DEFF Research Database (Denmark)

    Jensen, Annemette Hindhede; Christensen, Erik; Barner, Jens H. Von

    2014-01-01

    stainless steel were found to be far below the US Department of Energy target value of 10mcm2. The good contact resistance of tantalum was demonstrated by simulating high temperature polymer electrolyte membrane electrolysis conditions by anodization performed in 85% phosphoric acid at 130◦C, followed...

  20. Studies of the transition temperature and normal state resistivity of Nb3Ge and Nb films

    International Nuclear Information System (INIS)

    Lutz, H.; Weismann, H.; Gurvitch, M.; Goland, A.N.; Kammerer, O.F.; Strongin, M.

    1976-01-01

    Correlations between T/sub c/ and specific features of the normal state resistance vs temperature curves are discussed for both Nb 3 Ge and ion damaged Nb films. Of particular interest is the correlation between T/sub c/ and rho 0 in Nb 3 Ge films

  1. The High-Temperature Resistance Properties of Polysiloxane/Al Coatings with Low Infrared Emissivity

    Directory of Open Access Journals (Sweden)

    Jun Zhao

    2018-03-01

    Full Text Available High-temperature-resistant coatings with low infrared emissivity were prepared using polysiloxane resin and flake aluminum as the adhesive and pigment, respectively. The heat resistance mechanisms of the polysiloxane/Al coating were systematically investigated. The composition, surface morphology, infrared reflectance spectra, and thermal expansion dimension (ΔL of the coatings were characterized by X-ray photoelectron spectroscopy (XPS, field emission scanning electron microscopy (FE-SEM, Fourier transform infrared spectroscopy, and thermal mechanical analysis (TMA, respectively. The results show that thermal decomposition of the resin and mismatch of ΔL between the coating and the substrate facilitate the high temperature failure of the coating. A suitable amount of flake aluminum pigments could restrain the thermal decomposition of the resin and could increase the match degree of ΔL between the coating and substrate, leading to an enhanced thermal resistance of the coating. Our results find that a coating with a pigment to binder ratio (P/B ratio of 1.0 could maintain integrity until 600 °C, and the infrared emissivity was as low as 0.27. Hence, a coating with high-temperature resistance and low emissivity was obtained. Such coatings can be used for infrared stealth technology or energy savings in high-temperature equipment.

  2. Investigation on low room-temperature resistivity Cr/(Ba0.85Pb0.15)TiO3 positive temperature coefficient composites

    DEFF Research Database (Denmark)

    He, Zeming; Ma, J.; Qu, Yuanfang

    2009-01-01

    discussed. Using these special processes, the prepared composite with 20 wt% Cr possessed low room-temperature resistivity (2.96 Ω cm at 25 °C) and exhibited PTC effect (resistivity jump of 10), which is considered as a promising candidate for over-current protector when working at low voltage. The grain......Low room-temperature resistivity positive temperature coefficient (PTC) Cr/(Ba0.85Pb0.15)TiO3 composites were produced via a reducing sintering and a subsequent oxidation treatment. The effects of metallic content and processing conditions on materials resistivity–temperature properties were...

  3. Evaluation of High Temperature Corrosion Resistance of Finned Tubes Made of Austenitic Steel And Nickel Alloys

    Directory of Open Access Journals (Sweden)

    Turowska A.

    2016-06-01

    Full Text Available The purpose of the paper was to evaluate the resistance to high temperature corrosion of laser welded joints of finned tubes made of austenitic steel (304,304H and nickel alloys (Inconel 600, Inconel 625. The scope of the paper covered the performance of corrosion resistance tests in the atmosphere of simulated exhaust gases of the following chemical composition: 0.2% HCl, 0.08% SO2, 9.0% O2 and N2 in the temperature of 800°C for 1000 hours. One found out that both tubes made of austenitic steel and those made of nickel alloy displayed good resistance to corrosion and could be applied in the energy industry.

  4. Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors

    International Nuclear Information System (INIS)

    Eisen, Y.

    1996-01-01

    Improvements of CdTe crystal quality and significant progress in the growth of large ingots of high resistivity CdZnTe material enable the fabrication of larger area detectors in single element form or monolithic arrays. These advances allow for the development of imaging devices of improved spatial resolution for industrial, research and medical applications. CdTe and CdZnTe detectors operate in single photon counting mode or in current mode (charge integrating mode). The paper presents advantages of CdTe and CdZnTe over common scintillator type detectors, but also presents the shortcomings of the former detectors with respect to charge collection which limit the yields of good spectrometers. The paper reviews industrial and research applications utilizing these detectors and in particular describes in detail two imaging systems for security screening and custom inspection. These systems are characterized by large dynamic range and good spatial resolution and are composed of large arrays of CdTe spectrometers and discriminator grade detectors. A wide energy range detector assembly, for astrophysical research of gamma ray bursts composed of CdTe, HgI 2 and CdZnTe spectrometers in two dimensional arrays is also presented. (orig.)

  5. Optimization of the temperature profiles due to a nitrogen jet impinging on a TLD detector

    International Nuclear Information System (INIS)

    Cohen, I.; Bar-Kohany, T.; German, U.; Ziskind, G.

    2014-01-01

    A study was conducted to simulate the temperature profiles during readout in a typical, commercial thermo-luminescence dosimeter (TLD) chip and to optimize the readout conditions. The study makes use of a previously developed numerical model which calculates the crystal's temperature profile evolution inside a TLD crystal compound. The calculated profiles were implemented in the Randall-Wilkins equation to obtain the estimated glow curve. A number of jet temperature profiles were investigated in order to optimize the readout process. - Highlights: • The temperature profiles in a TLD chip compound were simulated. • Some non-routine heating profiles are proposed. • A better efficiency and shorter time can be obtained with these profiles. • The resulting glow curves were evaluated as well

  6. Dependence of the surface resistance of niobium coated copper cavities on the coating temperature

    International Nuclear Information System (INIS)

    Darriulat, P.; Durand, C.; Janot, P.; Rensing, N.; Weingarten, W.; Bosland, P.; Gobin, J.; Martignac, J.

    1996-01-01

    Six hydro-formed copper 1.5 GHz cavities have been baked and coated with niobium at different temperatures between 100 deg C and 200 deg C, while keeping the other discharge parameters unchanged. Their surface resistance has been measured as a function RF field and trapped magnetic field. Its dependence on deposition temperature confirms earlier indications obtained using 350 MHz LEP cavities that 150 deg C leads to optimal performances. The critical temperatures of Nb/Cu and bulk niobium cavities have also been measured. (author)

  7. Laser beam joining of non-oxidic ceramics for ultra high temperature resistant joints

    International Nuclear Information System (INIS)

    Lippmann, W.; Knorr, J.; Wolf, R.; Reinecke, A.M.; Rasper, R.

    2004-01-01

    The excellent technical properties of silicon carbide (SiC) and silicon nitride (Si 3 N 4 ) ceramics, such as resistance to extreme temperatures, oxidation, mechanical wear, aggressive chemical substances and radioactive radiation and also its high thermal conductivity and good temperature-shock resistance, make these ceramics ideally suited for use in the field of nuclear technology. However, their practical use has been limited so far because of the unavailability of effective joining techniques for these ceramics, especially for high temperature applications. A new joining technology (CERALINK registered ) has been developed in a network project which allowed high temperature resistant and vacuum-tight joining of SiC or Si 3 N 4 ceramics. A power laser is used as heat source, which makes it possible to join ceramic components in free atmosphere in combination with a pure oxidic braze filler. As no furnace is necessary, there are no limitations on the component dimensions by the furnace-geometry. During the joining process, the heated area can be limited to the seam area so that this technology can also be used to encapsulate materials with a low melting point. The seam has a high mechanical strength, it is resistant to a wide range of chemicals and radiation and it is also vacuum-tight. The temperature resistance can be varied by variation of the braze filler composition - usually between 1,400 C and >1,600 C. Beside the optimum filler it is also important to select the suitable laser wavelength. The paper will demonstrate the influence of different wave lengths, i. e. various laser types, on the seam quality. Examples are chosen to illustrate the strengths and limitations of the new technology

  8. Power Generation by Zinc Antimonide Thin Film under Various Load Resistances at its Critical Operating Temperature

    DEFF Research Database (Denmark)

    Mir Hosseini, Seyed Mojtaba; Rezaniakolaei, Alireza; Rosendahl, Lasse Aistrup

    slightly reduces during unload conditions, although it is expected that by eliminating load in each step, the initial amount of voltage exactly repeats. Similar behavior is observed for Seebeck coefficient distribution versus time of working particularly in lower load resistances. Based on variation...... thin films operating under different load resistances at around its critical operating temperature, 400 ᵒC. The thermoelement is subjected to constant hot side temperature and to room temperature at the cold junction in order to measure the thin film TEG’s sample performance. The nominal loads equal...... to 10, 15, 20, 25, 30, 35, 40, 45… 175, and also 200 Ohms were applied. The results show that the value of the Seebeck coefficient is 0.0002 [V/K] for the specimen, which is in agreement with quantities of other zinc antimonide bulks materials in literature. The results also show that the voltage...

  9. Role of lattice structure and low temperature resistivity in fast-electron-beam filamentation in carbon

    International Nuclear Information System (INIS)

    Dance, R J; Butler, N M H; Gray, R J; MacLellan, D A; Rusby, D R; Xu, H; Neely, D; McKenna, P; Scott, G G; Robinson, A P L; Zielbauer, B; Bagnoud, V; Desjarlais, M P

    2016-01-01

    The influence of low temperature (eV to tens-of-eV) electrical resistivity on the onset of the filamentation instability in fast-electron transport is investigated in targets comprising of layers of ordered (diamond) and disordered (vitreous) carbon. It is shown experimentally and numerically that the thickness of the disordered carbon layer influences the degree of filamentation of the fast-electron beam. Strong filamentation is produced if the thickness is of the order of 60 μm or greater, for an electron distribution driven by a sub-picosecond, mid-10 20 Wcm −2 laser pulse. It is shown that the position of the vitreous carbon layer relative to the fast-electron source (where the beam current density and background temperature are highest) does not have a strong effect because the resistive filamentation growth rate is high in disordered carbon over a wide range of temperatures up to the Spitzer regime. (paper)

  10. Implementation of a method for calculating temperature-dependent resistivities in the KKR formalism

    Science.gov (United States)

    Mahr, Carsten E.; Czerner, Michael; Heiliger, Christian

    2017-10-01

    We present a method to calculate the electron-phonon induced resistivity of metals in scattering-time approximation based on the nonequilibrium Green's function formalism. The general theory as well as its implementation in a density-functional theory based Korringa-Kohn-Rostoker code are described and subsequently verified by studying copper as a test system. We model the thermal expansion by fitting a Debye-Grüneisen curve to experimental data. Both the electronic and vibrational structures are discussed for different temperatures, and employing a Wannier interpolation of these quantities we evaluate the scattering time by integrating the electron linewidth on a triangulation of the Fermi surface. Based thereupon, the temperature-dependent resistivity is calculated and found to be in good agreement with experiment. We show that the effect of thermal expansion has to be considered in the whole calculation regime. Further, for low temperatures, an accurate sampling of the Fermi surface becomes important.

  11. Low temperature resistance in saplings and ramets of Polylepis sericea in the Venezuelan Andes

    Science.gov (United States)

    Rada, Fermín; García-Núñez, Carlos; Rangel, Sairo

    2009-09-01

    The frequent occurrence of all year-round below zero temperatures in tropical high mountains constitutes a most stressful climatic factor that plants have to confront. Polylepis forests are found well above the continuous forest line and are distributed throughout the Andean range. These trees require particular traits to overcome functional limitations imposed on them at such altitudes. Considering seedling and sapling stages as filter phases in stressful environments, some functional aspects of the regeneration of Polylepis sericea, a species associated to rock outcrops in the Venezuelan Andes, were studied. We characterized microclimatic conditions within a forest, in a forest gap and surrounding open páramo and determined low temperature resistance mechanisms in seedlings, saplings and ramets. Conditions in the forest understory were more stable compared to the forest gaps and open surrounding páramo. Minimum temperatures close to the ground were 3.6 °C lower in the open páramo compared to the forest understory. Maximum temperatures were 9.0 °C higher in the open páramo. Ice nucleation and injury temperatures occurred between -6 and -8 °C for both ramets and saplings, an evidence of frost avoidance to low nighttime temperatures. In this particular forest, this resistance ability is determinant in their island-like distribution in very specific less severe temperature habitats.

  12. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    Science.gov (United States)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  13. Estimation of weld nugget temperature by thermography method in resistance projection welding process

    International Nuclear Information System (INIS)

    Setty, D.S.; Rameswara Roa, A.; Hemantha Rao, G.V.S.; Jaya Raj, R.N.

    2008-01-01

    In the Pressurized Heavy Water Reactor (PHWR) fuel manufacturing, zirconium alloy appendages like spacer and bearing pads are welded to the thin wall zirconium alloy fuel tubes by using resistance projection welding process. Out of many joining processes available, resistance-welding process is reliable, environment friendly and best suitable for mass production applications. In the fuel assembly, spacer pads are used to get the required inter-element spacing and Bearing pads are used to get the required load-bearing surface for the fuel assembly. Performance of the fuel assembly in the reactor is greatly influenced by these weld joint's quality. Phase transformation from α to β phase is not acceptable while welding these tiny appendages. At present only destructive metallography test is available for this purpose. This can also be achieved by measuring weld nugget temperature where in the phase transformation temperature for zirconium alloy material is 853 o C. The temperature distribution during resistance welding of tiny parts cannot be measured by conventional methods due to very small space and short weld times involved in the process. Shear strength, dimensional accuracy and weld microstructures are some of the key parameters used to measure the quality of appendage weld joints. Weld parameters were optimized with the help of industrial experimentation methodology. Individual projection welding by split electrode concept, and during welding on empty tube firm support is achieved on inner side of the tube by using expandable pneumatic mandrel. In the present paper, an attempt was made to measure the weld nugget temperature by thermography technique and is correlated with standard microstructures of zirconium alloy material. The temperature profiles in the welding process are presented for different welding conditions. This technique has helped in measuring the weld nugget temperature more accurately. It was observed that in the present appendage welding

  14. The Effect of Temperature and Host Plant Resistance on Population Growth of the Soybean Aphid Biotype 1 (Hemiptera: Aphididae).

    Science.gov (United States)

    Hough, Ashley R; Nechols, James R; McCornack, Brian P; Margolies, David C; Sandercock, Brett K; Yan, Donglin; Murray, Leigh

    2017-02-01

    A laboratory experiment was conducted to evaluate direct and indirect effects of temperature on demographic traits and population growth of biotype 1 of the soybean aphid, Aphis glycines Matsumura. Our objectives were to better understand how temperature influences the expression of host plant resistance, quantify the individual and interactive effects of plant resistance and temperature on soybean aphid population growth, and generate thermal constants for predicting temperature-dependent development on both susceptible and resistant soybeans. To assess indirect (plant-mediated) effects, soybean aphids were reared under a range of temperatures (15-30 °C) on soybean seedlings from a line expressing a Rag1 gene for resistance, and life history traits were quantified and compared to those obtained for soybean aphids on a susceptible soybean line. Direct effects of temperature were obtained by comparing relative differences in the magnitude of life-history traits among temperatures on susceptible soybeans. We predicted that temperature and host plant resistance would have a combined, but asymmetrical, effect on soybean aphid fitness and population growth. Results showed that temperature and plant resistance influenced preimaginal development and survival, progeny produced, and adult longevity. There also appeared to be a complex interaction between temperature and plant resistance for survival and developmental rate. Evidence suggested that the level of plant resistance increased at higher, but not lower, temperature. Soybean aphids required about the same number of degree-days to develop on resistant and susceptible plants. Our results will be useful for making predictions of soybean aphid population growth on resistant plants under different seasonal temperatures. © The Authors 2016. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  15. Exploiting fast detectors to enter a new dimension in room-temperature crystallography

    International Nuclear Information System (INIS)

    Owen, Robin L.; Paterson, Neil; Axford, Danny; Aishima, Jun; Schulze-Briese, Clemens; Ren, Jingshan; Fry, Elizabeth E.; Stuart, David I.; Evans, Gwyndaf

    2014-01-01

    A departure from a linear or an exponential decay in the diffracting power of macromolecular crystals is observed and accounted for through consideration of a multi-state sequential model. A departure from a linear or an exponential intensity decay in the diffracting power of protein crystals as a function of absorbed dose is reported. The observation of a lag phase raises the possibility of collecting significantly more data from crystals held at room temperature before an intolerable intensity decay is reached. A simple model accounting for the form of the intensity decay is reintroduced and is applied for the first time to high frame-rate room-temperature data collection

  16. Effects of Temperature Stresses on the Resistance of Chickpea Genotypes and Aggressiveness of Didymella rabiei Isolates

    Directory of Open Access Journals (Sweden)

    Seid Ahmed Kemal

    2017-09-01

    Full Text Available Chickpea (Cicer arietinum L. is an important food and rotation crop in many parts of the world. Cold (freezing and chilling temperatures and Ascochyta blight (Didymella rabiei are the major constraints in chickpea production. The effects of temperature stresses on chickpea susceptibility and pathogen aggressiveness are not well documented in the Cicer-Didymella pathosystem. Two experiments were conducted under controlled conditions using chickpea genotypes and pathogen isolates in 2011 and 2012. In Experiment 1, four isolates of D. rabiei (AR-01, AR-02, AR-03 and AR-04, six chickpea genotypes (Ghab-1, Ghab-2, Ghab-3, Ghab-4, Ghab-5 and ICC-12004 and four temperature regimes (10, 15, 20, and 25°C were studied using 10 day-old seedlings. In Experiment 2, three chickpea genotypes (Ghab-1, Ghab-2, and ICC-12004 were exposed to 5 and 10 days of chilling temperature exposure at 5°C and non-exposed seedlings were used as controls. Seedlings of the three chickpea genotypes were inoculated with the four pathogen isolates used in Experiment 1. Three disease parameters (incubation period, latent period and disease severity were measured to evaluate treatment effects. In Experiment 1, highly significant interactions between genotypes and isolates; genotypes and temperature; and isolate and temperature were observed for incubation and latent periods. Genotype x isolate and temperature x isolate interactions also significantly affected disease severity. The resistant genotype ICC-12004 showed long incubation and latent periods and low disease severity at all temperatures. The highly aggressive isolate AR-04 caused symptoms, produced pycnidia in short duration as well as high disease severity across temperature regimes, which indicated it is adapted to a wide range of temperatures. Short incubation and latent periods and high disease severity were observed on genotypes exposed to chilling temperature. Our findings showed that the significant interactions of

  17. Study of the energetic proton production in relativistic heavy ions Ne + nuclei collisions, using Diogene detector. Hadronic matter temperature

    International Nuclear Information System (INIS)

    Rahmani, A.

    1988-12-01

    The study of the proton's production differential cross sections, in the collision of relativistic heavy ions, allows to obtain the nuclear-matter temperature and gives information about the nucleons large burst pulses in the nucleus. The chosen thermodynamic model is a generalized approach of the R. Hagedorn model, applied to heavy ions collisions: the nuclear matter is divided in volume elements δV assumed to be in thermal and chemical equilibrium and emitting particles and fragments isotropically, inside their own system. The applied nuclear-matter velocity distribution depended only on the impact parameter and on the relationship between the chemical potential and the temperature. The predictions of this thermodynamic model were compared to the Saturne experimental results, using Diogene detector. The obtained temperature values are similar to those given by D. Hahn and H. Stoker. The proton production cross sections were measured for backward emitting angles. A relationship between the cross sections and the burst pulse distribution in the nuclei was settled [fr

  18. A room temperature LSO/PIN photodiode PET detector module that measures depth of interaction

    International Nuclear Information System (INIS)

    Moses, W.W.; Derenzo, S.E.; Melcher, C.L.; Manente, R.A.

    1994-11-01

    We present measurements of a 4 element PET detector module that uses a 2x2 array of 3 mm square PIN photodiodes to both measure the depth of interaction (DOI) and identify the crystal of interaction. Each photodiode is coupled to one end of a 3x3x25 mm LSO crystal, with the opposite ends of all 4 crystals attached to a single PMT that provides a timing signal and initial energy discrimination. Each LSO crystal is coated with a open-quotes lossyclose quotes reflector, so the ratio of light detected in the photodiode and PMT depends on the position of interaction in the crystal, and is used to determine this position on an event by event basis. This module is operated at +25 degrees C with a photodiode amplifier peaking time of 2 μs. When excited by a collimated beam of 511 keV photons at the photodiode end of the module (i.e. closest to the patient), the DOI resolution is 4 mm fwhm and the crystal of interaction is identified correctly 95% of the time. When excited at the opposite end of the module, the DOI resolution is 13 mm fwhm and the crystal of interaction is identified correctly 73% of the time. The channel to channel variations in performance are minimal

  19. Imaging microchannel plate detectors for XUV sky survey experiments

    International Nuclear Information System (INIS)

    Barstow, M.A.; Fraser, G.W.; Milward, S.R.

    1986-01-01

    Attention is given to the development of microchannel plate detectors for the Wide Field Camera (WFC) XUV (50-300 A) sky survey experiment on Rosat. A novel feature of the detector design is that the microchannel plates and their resistive anode readout are curved to the same radius as the WFC telescope focal surface. It is shown that curving the channel plates is not detrimental to gain uniformity. The paper describes the design of a curved resistive anode readout element and contrasts the present measurements of spatial resolution, global and local uniformity and temperature coefficient of resistance with the poor performance recently ascribed to resistive anodes in the literature. 18 references

  20. Hydrogen detector

    International Nuclear Information System (INIS)

    Kumagaya, Hiromichi; Yoshida, Kazuo; Sanada, Kazuo; Chigira, Sadao.

    1994-01-01

    The present invention concerns a hydrogen detector for detecting water-sodium reaction. The hydrogen detector comprises a sensor portion having coiled optical fibers and detects hydrogen on the basis of the increase of light transmission loss upon hydrogen absorption. In the hydrogen detector, optical fibers are wound around and welded to the outer circumference of a quartz rod, as well as the thickness of the clad layer of the optical fiber is reduced by etching. With such procedures, size of the hydrogen detecting sensor portion can be decreased easily. Further, since it can be used at high temperature, diffusion rate is improved to shorten the detection time. (N.H.)

  1. Electrical resistivity and thermal conductivity of liquid aluminum in the two-temperature state

    Science.gov (United States)

    Petrov, Yu V.; Inogamov, N. A.; Mokshin, A. V.; Galimzyanov, B. N.

    2018-01-01

    The electrical resistivity and thermal conductivity of liquid aluminum in the two-temperature state is calculated by using the relaxation time approach and structural factor of ions obtained by molecular dynamics simulation. Resistivity witin the Ziman-Evans approach is also considered to be higher than in the approach with previously calculated conductivity via the relaxation time. Calculations based on the construction of the ion structural factor through the classical molecular dynamics and kinetic equation for electrons are more economical in terms of computing resources and give results close to the Kubo-Greenwood with the quantum molecular dynamics calculations.

  2. Studies on multigap resistive plate chamber prototypes for the new NeuLAND detector at the R3B experiment at FAIR

    Energy Technology Data Exchange (ETDEWEB)

    Elvers, Michael; Endres, Janis; Zilges, Andreas [IKP, Universitaet Koeln (Germany); Aumann, Tom; Boretzky, Konstanze; Hehner, Joerg; Heil, Michael; Prokopowicz, Wawrczek; Reifarth, Rene; Schrieder, Gerhard [Gesellschaft fuer Schwerionenforschung (GSI), Darmstadt (Germany); Bemmerer, Daniel; Stach, Daniel; Wagner, Andreas; Yakorev, Dmitry [Forschungszentrum Dresden-Rossendorf (FZD), Dresden (Germany); Kratz, Jens Volker; Rossi, Dominic [Johannes-Gutenberg-Universitaet, Mainz (Germany)

    2009-07-01

    The NeuLAND detector is part of the R3B experiment at FAIR and will detect neutrons between 0.2 and 1 GeV. The high energy neutrons are converted to charged particles, mainly protons, which are detected by Multigap Resistive Plate Chambers (MRPC). For the detector, a time resolution of {sigma}{sub t} < 100 ps and a position resolution of {sigma}{sub x,y,z} {approx}1 cm is required for given flight paths in the range from 10 to 35 m. An active area of 2 x 2 m{sup 2} of the neutron detector at a distance of 12.5 m to the target will match the angular acceptance of {+-}80 mrad for the neutrons defined by the gap of the superconducting dipole magnet. The salient features of the prototypes are described, as well as electrical measurements and studies with cosmic rays.

  3. Study of low noise preamplifier systems for use with room temperature mercuric iodide (HgI2) x-ray detectors

    International Nuclear Information System (INIS)

    Iwanczyk, J.S.; Dabrowski, A.J.; Huth, G.C.; Del Duca, A.; Schenpple, W.

    1980-01-01

    An analysis of different preamplification systems for use with room temperature mercuric iodide x-ray detectors has been performed. Resistor-, drain-, and light-feedback preamplifiers have been studied. Energy resolution of 295 eV (FWHM) for Fe-55 source (5.9 keV) and 225 eV (FWHM) for the pulser have been obtained with both the detector and the input FET at room temperature using the pulsed-light feedback preamplifier. It has been shown that cooling the input FET using a small Peltier element allows the energy resolution to be improved up to 25%

  4. Fracture resistance of asphalt concrete modified with crumb rubber at low temperatures

    Directory of Open Access Journals (Sweden)

    A. Razmi

    2018-05-01

    Full Text Available The main objective of this study is to obtain fracture toughness of asphalt concrete modified by Crumb Rubber (CR and Sasobit at low temperatures. First, Bending Beam Rheometer (BBR test was performed on unmodified binder (binder 60/70, binder 60/70 + 3%Sasobit and 20%CR + 3%Sasobit modified asphalt binder to find how each modifier affect asphalt binder stiffness and relaxation rate at low temperatures. Mixed mode I/II fracture tests were conducted by cracked Semi-Circular Bending (SCB specimens and the critical stress intensity factors were calculated for pure mode I, mixed mode I/II and pure mode II conditions. Results of BBR tests indicated that 20%CR + 3%Sasobit reduces stiffness and the m-value increase at low temperatures. As a result, 20%CR + 3%Sasobit has positive effect on low temperatures performance by improving thermal cracking resistance. Also, according to the fracture toughness test results, the Warm Mix Asphalt (WMA mixture containing 20% CR, shows higher resistance against crack growth than WMA mixture. It was found that mixed mode I/II can be more detrimental than pure mode I and II conditions. Keywords: Crumb rubber, Asphalt concrete, Bending Beam Rheometer, Fracture resistance, Semi-circular bending test

  5. Perceiving nasal patency through mucosal cooling rather than air temperature or nasal resistance.

    Directory of Open Access Journals (Sweden)

    Kai Zhao

    Full Text Available Adequate perception of nasal airflow (i.e., nasal patency is an important consideration for patients with nasal sinus diseases. The perception of a lack of nasal patency becomes the primary symptom that drives these patients to seek medical treatment. However, clinical assessment of nasal patency remains a challenge because we lack objective measurements that correlate well with what patients perceive. The current study examined factors that may influence perceived patency, including air temperature, humidity, mucosal cooling, nasal resistance, and trigeminal sensitivity. Forty-four healthy subjects rated nasal patency while sampling air from three facial exposure boxes that were ventilated with untreated room air, cold air, and dry air, respectively. In all conditions, air temperature and relative humidity inside each box were recorded with sensors connected to a computer. Nasal resistance and minimum airway cross-sectional area (MCA were measured using rhinomanometry and acoustic rhinometry, respectively. General trigeminal sensitivity was assessed through lateralization thresholds to butanol. No significant correlation was found between perceived patency and nasal resistance or MCA. In contrast, air temperature, humidity, and butanol threshold combined significantly contributed to the ratings of patency, with mucosal cooling (heat loss being the most heavily weighted predictor. Air humidity significantly influences perceived patency, suggesting that mucosal cooling rather than air temperature alone provides the trigeminal sensation that results in perception of patency. The dynamic cooling between the airstream and the mucosal wall may be quantified experimentally or computationally and could potentially lead to a new clinical evaluation tool.

  6. Heat resistance of Fe-Al intermetallics in the context of selected heat-resistant and hihg-temperature creep resistant steels

    Directory of Open Access Journals (Sweden)

    P. Baranowski

    2009-04-01

    Full Text Available Results are hereby presented of heat-resistance tests of two Fe3Al and FeAl intermetallic phase-based alloys in the context of St41k-typeboiler steel and 50H21G9N4 high-temperature creep resistant steel. It has been ascertained that heat resistance of the 50H21G9N4 steeland of the Fe3Al and FeAl intermetallic phase-based alloys significantly exceeds that of the boiler steel tested in the air atmosphere and the atmosphere of a flue gas with CO, CO2, SiO2 content alike. Improvement of these properties depends of exposure conditions. The largest differences have been observed when the tests were carried out in temperature 1023 K and in the flue gas atmosphere. The differences have been more and more noticeable as the exposition duration extended. A tendency has been also recorded of smaller mass decrements of the Fe3Al and FeAl intermetallic phase-based alloys as compared to the 50H21G9N4 steel.

  7. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  8. High rate resistive plate chambers: An inexpensive, fast, large area detector of energetic charged particles for accelerator and non-accelerator applications

    International Nuclear Information System (INIS)

    Wuest, C.R.; Ables, E.; Bionta, R.M.; Clamp, O.; Haro, M.; Mauger, G.J.; Miller, K.; Olson, H.; Ramsey, P.

    1993-05-01

    Resistive Plate Chambers, or RPCs, have been used until recently as large detectors of cosmic ray muons. They are now finding use as fast large-area trigger and muon detection systems for different high energy physics detectors such the L3 Detector at LEP and future detectors to be built at the Superconducting Super Collider (SSC) and at the Large Hadron Collider (LHC) at CERN. RPC systems at these accelerators must operate with high efficiency, providing nanosecond timing resolution in particle fluences up to a few tens of kHz/cm 2 -- with thousands of square meters of active area. RPCs are simple and cheap to construct. The authors report here recent work on RPCs using new materials that exhibit a combination of desirable RPC features such as low bulk resistivity, high dielectric strength, low mass, and low cost. These new materials were originally developed for use in electronics assembly areas and other applications, where static electric charge buildup can damage sensitive electrical systems

  9. Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn

    International Nuclear Information System (INIS)

    Yatskiv, R.; Zdansky, K.; Pekarek, L.

    2009-01-01

    Particle detectors made with a guard-ring (GR) electrode, operating at room temperature, have been studied. The detectors were fabricated on a semi-insulating InP crystal co-doped with Ti and Zn, grown using the Liquid-Encapsulated Czochralski technique. The detection performance of the particle detectors was evaluated using alpha particles emitted from a 241 Am source. Good detector performance has been achieved with measured charge-collection efficiencies of 99.9% and 98.2% and FWHM energy resolutions of 0.9% and 2.1%. The measurements were carried out at 230 K for negative and positive bias voltages of the irradiated electrode. The good performance is due to the SI properties of the material which has been achieved by doping with suitable Ti atoms and co-doping with a low concentration of Zn acceptors, sufficient to fully compensate shallow donors. Electron and hole charge-collection efficiencies (CCEs) were measured at various temperatures. At room temperature, unlike at low temperature (T<250 K), the hole CCE was better than the electron CCE, which can be explained by the presence of electron-trapping centres in InP with a temperature-dependent capture rate.

  10. Reversible Dissolution of Microdomains in Detergent-Resistant Membranes at Physiological Temperature.

    Directory of Open Access Journals (Sweden)

    Andrea Cremona

    Full Text Available The formation of lipid microdomains ("rafts" is presumed to play an important role in various cellular functions, but their nature remains controversial. Here we report on microdomain formation in isolated, detergent-resistant membranes from MDA-MB-231 human breast cancer cells, studied by atomic force microscopy (AFM. Whereas microdomains were readily observed at room temperature, they shrunk in size and mostly disappeared at higher temperatures. This shrinking in microdomain size was accompanied by a gradual reduction of the height difference between the microdomains and the surrounding membrane, consistent with the behaviour expected for lipids that are laterally segregated in liquid ordered and liquid disordered domains. Immunolabeling experiments demonstrated that the microdomains contained flotillin-1, a protein associated with lipid rafts. The microdomains reversibly dissolved and reappeared, respectively, on heating to and cooling below temperatures around 37 °C, which is indicative of radical changes in local membrane order close to physiological temperature.

  11. Reversible Dissolution of Microdomains in Detergent-Resistant Membranes at Physiological Temperature

    Science.gov (United States)

    Cremona, Andrea; Orsini, Francesco; Corsetto, Paola A.; Hoogenboom, Bart W.; Rizzo, Angela M.

    2015-01-01

    The formation of lipid microdomains (“rafts”) is presumed to play an important role in various cellular functions, but their nature remains controversial. Here we report on microdomain formation in isolated, detergent-resistant membranes from MDA-MB-231 human breast cancer cells, studied by atomic force microscopy (AFM). Whereas microdomains were readily observed at room temperature, they shrunk in size and mostly disappeared at higher temperatures. This shrinking in microdomain size was accompanied by a gradual reduction of the height difference between the microdomains and the surrounding membrane, consistent with the behaviour expected for lipids that are laterally segregated in liquid ordered and liquid disordered domains. Immunolabeling experiments demonstrated that the microdomains contained flotillin-1, a protein associated with lipid rafts. The microdomains reversibly dissolved and reappeared, respectively, on heating to and cooling below temperatures around 37°C, which is indicative of radical changes in local membrane order close to physiological temperature. PMID:26147107

  12. Modelling of Dynamic Transmission Cable Temperature Considering Soil-Specific Heat, Thermal Resistivity, and Precipitation

    DEFF Research Database (Denmark)

    Olsen, Rasmus; Anders, George J.; Holboell, Joachim

    2013-01-01

    This paper presents an algorithm for the estimation of the time-dependent temperature evolution of power cables, when real-time temperature measurements of the cable surface or a point within its vicinity are available. The thermal resistivity and specific heat of the cable surroundings are varied...... as functions of the moisture content which is known to vary with time. Furthermore, issues related to the cooling effect during rainy weather are considered. The algorithm is based on the lumped parameters model and takes as input distributed temperature sensing measurements as well as the current and ambient...... temperature. The concept is verified by studying a laboratory setup of a 245 kV cable system....

  13. Detectors - Electronics

    International Nuclear Information System (INIS)

    Bregeault, J.; Gabriel, J.L.; Hierle, G.; Lebotlan, P.; Leconte, A.; Lelandais, J.; Mosrin, P.; Munsch, P.; Saur, H.; Tillier, J.

    1998-01-01

    The reports presents the main results obtained in the fields of radiation detectors and associated electronics. In the domain of X-ray gas detectors for the keV range efforts were undertaken to rise the detector efficiency. Multiple gap parallel plate chambers of different types as well as different types of X → e - converters were tested to improve the efficiency (values of 2.4% at 60 KeV were reached). In the field of scintillators a study of new crystals has been carried out (among which Lutetium orthosilicate). CdTe diode strips for obtaining X-ray imaging were studied. The complete study of a linear array of 8 CdTe pixels has been performed and certified. The results are encouraging and point to this method as a satisfying solution. Also, a large dimension programmable chamber was used to study the influence of temperature on the inorganic scintillators in an interval from -40 deg. C to +150 deg. C. Temperature effects on other detectors and electronic circuits were also investigated. In the report mentioned is also the work carried out for the realization of the DEMON neutron multidetector. For neutron halo experiments different large area Si detectors associated with solid and gas position detectors were realized. In the frame of a contract with COGEMA a systematic study of Li doped glasses was undertaken aiming at replacing with a neutron probe the 3 He counters presently utilized in pollution monitoring. An industrial prototype has been realised. Other studies were related to integrated analog chains, materials for Cherenkov detectors, scintillation probes for experiments on fundamental processes, gas position sensitive detectors, etc. In the field of associated electronics there are mentioned the works related to the multidetector INDRA, data acquisition, software gamma spectrometry, automatic gas pressure regulation in detectors, etc

  14. Characterization of electrical resistivity as a function of temperature in the Mo-Si-B system

    International Nuclear Information System (INIS)

    Beckman, Sarah E.

    1999-01-01

    Measurements of electrical resistivity as a function of temperature from 25 to 1,500 C were conducted on polycrystalline samples in the Mo-Si-B system. Single phase, or nearly single phase, samples were prepared for the following phases: Mo 3 Si, Mo 5 SiB 2 , Mo 5 Si 3 B x , MoB, MoSi 2 , and Mo 5 Si 3 . Thesis materials all exhibit resistivity values within a narrow range(4--22 x 10 -7 Omega-m), and the low magnitude suggests these materials are semi-metals or low density of states metals. With the exception of MoSi 2 , all single phase materials in this study were also found to have low temperature coefficient of resistivity(TCR) values. These values ranged from 2.10 x 10 -10 to 4.74 x 10 -10 Omega-m/degree C, and MoSi 2 had a TCR of 13.77 x 10 -10 Omega-m/degree C. The results from the single phase sample measurements were employed in a natural log rule-of-mixtures model to relate the individual phase resistivity values to those of multiphase composites. Three Mo-Si-B phase regions were analyzed: the binary Mo 5 Si 3 -MoSi 2 system, the ternary phase field Mo 5 Si 3 B x MoB-MoSi 2 , and the Mo 3 Si-Mo 5 SiB 2 -Mo 5 Si 3 B x ternary region. The experimental data for samples in each of these regions agreed with the natural log model and illustrated that this model can predict the electrical resistivity as a function of temperature of multi-phase, sintered samples within an error of one standard deviation

  15. Aluminide protective coatings on high–temperature creep resistant cast steel

    Directory of Open Access Journals (Sweden)

    J. Kubicki

    2009-10-01

    Full Text Available This paper presents the results of research on aluminide protective coatings manufactured on high–temperature creep resistant cast steel. The main purpose of these coatings is protection against the high temperature corrosion, especially at high carburizing potential atmosphere. Coatings were obtained on cast steel type G–XNiCrSi36–18 with the following methods: pack cementation, paste method, cast method and slurry cementation. The phase composition, thickness and morphology of coatings were determined. Coatings capacity of carbon diffusion inhibition and thermal shocks resistance of coatings were determined with different methods. It was found, that all of the coatings reduce carbon diffusion in different degree and all coatings liable to degradation in consequence cracking and oxidation. Coating life time is mainly dependent on morphology, phase composition and service condition (thermal shocks first of all.

  16. Plasticity in behavioural responses and resistance to temperature stress in Musca domestica

    DEFF Research Database (Denmark)

    Kjaersgaard, Anders; Blackenhorn, Wolf U.; Pertoldi, Cino

    2015-01-01

    , at the stressful high temperature Spanish flies flew the furthest and Danish flies the shortest distance. Neither body size nor wing loading affected flight performance, although flies with narrower wings tended to fly further (wing shape effect). Swiss flies were most active in terms of locomotor activity......Organisms can respond to and cope with stressful environments in a number of ways including behavioural, morphological and physiological adjustments. To understand the role of behavioural traits in thermal adaptations we compared heat resistance, locomotor (walking and flying) activity, flight...... performance and morphology of three European populations of Musca domestica (Diptera: Muscidae) originating from different thermal conditions (Spain, Switzerland and Denmark) at benign and stressful high temperatures. Spanish flies showed greater heat resistance than Swiss and Danish flies. Similarly...

  17. Development of leak detection system using high temperature-resistant microphones

    International Nuclear Information System (INIS)

    Morishita, Yoshitsugu; Mochizuki, Hiroyasu; Watanabe, Kenshiu; Nakamura, Takahisa; Nakazima, Yoshiaki; Yamauchi, Tatsuya

    1995-01-01

    This report describes the development and testing of a coolant leak detection system for an inlet feeder pipe of an advanced thermal reactor (ATR) using high temperature-resistant microphones. Such microphones must be resistant to both high temperatures and high radiation doses. Leakage sound characteristics, attenuation of the sound level in a heat insulating box for the inlet feeder pipes, and background noise were investigated using the experimental facility and the prototype ATR 'FUGEN'. The optimum frequency ranges for the microphone were then determined based on the observed leakage sound and background noise. The ability of the microphone to discriminate between leaks and other burst-type noises was also investigated by statistical analyses. Finally, it was confirmed that the present method could detect a leak within a couple of seconds. (author)

  18. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo

    2018-04-14

    The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

  19. Development of a leak detection system using high temperature-resistant microphones

    International Nuclear Information System (INIS)

    Morishita, Yoshitsugu; Mochizuki, Hiroyasu; Watanabe, Kenshiu; Nakamura, Takahisa; Nakajima, Yoshiaki; Yamauchi, Tatsuya

    1991-01-01

    This report describes the development of a detection system of coolant leak from an inlet feeder pipe of an Advanced Thermal Reactor (ATR) with high temperature-resistant microphones. A microphone having resistance to both high temperature and high radiation dose has been developed at first. The characteristics with regard to leakage sound, attenuation of sound level in a heat insulating box for the inlet feeder pipes and background noise were clarified by laboratory experiments and measurements in the prototype ATR 'Fugen'. On the basis of these experimental findings, appropriate frequency ranges were surveyed to detect the leakage sound with a high S/N ratio under the background noise. Reliability of the system to a malfunction caused by burst-type noises observed in the plant was also investigated by statistical analyses. Finally, it was confirmed that the present method could detect a leak within a couple of seconds. (author)

  20. Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

    Directory of Open Access Journals (Sweden)

    Ihsan-ul-Haq Toor

    2014-01-01

    Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

  1. Distribution of temperature and deformations during resistance butt welding of uranium rods with titanium

    International Nuclear Information System (INIS)

    Tatarinov, V.R.; Krasnorutskij, V.S.

    1977-01-01

    Results are described on studying time-temperature and deformation parameters for resistance welding of uranium rods with titanium. It is shown that in the first period of welding (approximately 2/3 tsub(wel.)) the maxima of weld temperature and weld deformation deviate to titanium, and in the final period uranium deformation reaches the level of maximum lateral deformation of titanium. For faying surfaces with minimum weld deformation the joint cleaning of contaminants and oxides is insufficient, which results in lower weld quality

  2. Mid-infrared response of reduced graphene oxide and its high-temperature coefficient of resistance

    Directory of Open Access Journals (Sweden)

    Haifeng Liang

    2014-10-01

    Full Text Available Much effort has been made to study the formation mechanisms of photocurrents in graphene and reduced graphene oxide films under visible and near-infrared light irradiation. A built-in field and photo-thermal electrons have been applied to explain the experiments. However, much less attention has been paid to clarifying the mid-infrared response of reduced graphene oxide films at room temperature. Thus, mid-infrared photoresponse and annealing temperature-dependent resistance experiments were carried out on reduced graphene oxide films. A maximum photocurrent of 75 μA was observed at room temperature, which was dominated by the bolometer effect, where the resistance of the films decreased as the temperature increased after they had absorbed light. The electrons localized in the defect states and the residual oxygen groups were thermally excited into the conduction band, forming a photocurrent. In addition, a temperature increase of 2 °C for the films after light irradiation for 2 minutes was observed using absorption power calculations. This work details a way to use reduced graphene oxide films that contain appropriate defects and residual oxygen groups as bolometer-sensitive materials in the mid-infrared range.

  3. Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramic

    Science.gov (United States)

    Holsgrove, Kristina M.; Kepaptsoglou, Demie M.; Douglas, Alan M.; Ramasse, Quentin M.; Prestat, Eric; Haigh, Sarah J.; Ward, Michael B.; Kumar, Amit; Gregg, J. Marty; Arredondo, Miryam

    2017-06-01

    Despite being of wide commercial use in devices, the orders of magnitude increase in resistance that can be seen in some semiconducting BaTiO3-based ceramics, on heating through the Curie temperature (TC), is far from well understood. Current understanding of the behavior hinges on the role of grain boundary resistance that can be modified by polarization discontinuities which develop in the ferroelectric state. However, direct nanoscale resistance mapping to verify this model has rarely been attempted, and the potential approach to engineer polarization states at the grain boundaries, that could lead to optimized positive temperature coefficient (PTC) behavior, is strongly underdeveloped. Here we present direct visualization and nanoscale mapping in a commercially optimized BaTiO3-PbTiO3-CaTiO3 PTC ceramic using Kelvin probe force microscopy, which shows that, even in the low resistance ferroelectric state, the potential drop at grain boundaries is significantly greater than in grain interiors. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy reveal new evidence of Pb-rich grain boundaries symptomatic of a higher net polarization normal to the grain boundaries compared to the purer grain interiors. These results validate the critical link between optimized PTC performance and higher local polarization at grain boundaries in this specific ceramic system and suggest a novel route towards engineering devices where an interface layer of higher spontaneous polarization could lead to enhanced PTC functionality.

  4. Mapping grain boundary heterogeneity at the nanoscale in a positive temperature coefficient of resistivity ceramic

    Directory of Open Access Journals (Sweden)

    Kristina M. Holsgrove

    2017-06-01

    Full Text Available Despite being of wide commercial use in devices, the orders of magnitude increase in resistance that can be seen in some semiconducting BaTiO3-based ceramics, on heating through the Curie temperature (TC, is far from well understood. Current understanding of the behavior hinges on the role of grain boundary resistance that can be modified by polarization discontinuities which develop in the ferroelectric state. However, direct nanoscale resistance mapping to verify this model has rarely been attempted, and the potential approach to engineer polarization states at the grain boundaries, that could lead to optimized positive temperature coefficient (PTC behavior, is strongly underdeveloped. Here we present direct visualization and nanoscale mapping in a commercially optimized BaTiO3–PbTiO3–CaTiO3 PTC ceramic using Kelvin probe force microscopy, which shows that, even in the low resistance ferroelectric state, the potential drop at grain boundaries is significantly greater than in grain interiors. Aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy reveal new evidence of Pb-rich grain boundaries symptomatic of a higher net polarization normal to the grain boundaries compared to the purer grain interiors. These results validate the critical link between optimized PTC performance and higher local polarization at grain boundaries in this specific ceramic system and suggest a novel route towards engineering devices where an interface layer of higher spontaneous polarization could lead to enhanced PTC functionality.

  5. Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

    KAUST Repository

    Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

    2018-01-01

    that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

  6. Radiation-Resistant Photon-Counting Detector Package Providing Sub-ps Stability for Laser Time Transfer in Space

    Science.gov (United States)

    Prochzaka, Ivan; Kodat, Jan; Blazej, Josef; Sun, Xiaoli (Editor)

    2015-01-01

    We are reporting on a design, construction and performance of photon-counting detector packages based on silicon avalanche photodiodes. These photon-counting devices have been optimized for extremely high stability of their detection delay. The detectors have been designed for future applications in fundamental metrology and optical time transfer in space. The detectors have been qualified for operation in space missions. The exceptional radiation tolerance of the detection chip itself and of all critical components of a detector package has been verified in a series of experiments.

  7. Barrier Infrared Detector (BIRD)

    Data.gov (United States)

    National Aeronautics and Space Administration — A recent breakthrough in MWIR detector design, has resulted in a high operating temperature (HOT) barrier infrared detector (BIRD) that is capable of spectral...

  8. Evidence for Reduced Fatigue Resistance of Contemporary Rotary Instruments Exposed to Body Temperature.

    Science.gov (United States)

    de Vasconcelos, Rafaela Andrade; Murphy, Sarah; Carvalho, Claudio Antonio Talge; Govindjee, Rajiv G; Govindjee, Sanjay; Peters, Ove A

    2016-05-01

    The purpose of this study was to evaluate the effect of 2 different temperatures (20°C and 37°C) on the cyclic fatigue life of rotary instruments and correlate the results with martensitic transformation temperatures. Contemporary nickel-titanium rotary instruments (n = 20 each and tip size #25, including Hyflex CM [Coltene, Cuyahoga Falls, OH], TRUShape [Dentsply Tulsa Dental Specialties, Tulsa, OK], Vortex Blue [Dentsply Tulsa Dental Specialties], and ProTaper Universal [Dentsply Tulsa Dental Specialties]) were tested for cyclic fatigue at room temperature (20°C ± 1°C) and at body temperature (37°C ± 1°C). Instruments were rotated until fracture occurred in a simulated canal with an angle curvature of about 60° and a radius curvature of 3 mm; the center of the curvature was 4.5 mm from the instrument tip. The number of cycles to fracture was measured. Phase transformation temperatures for 2 instruments of each brand were analyzed by differential scanning calorimetry. Data were analyzed using the t test and 1-way analysis of variance with the significance level set at 0.05. For the tested size and at 20°C, Hyflex CM showed the highest resistance to fracture; no significant difference was found between TRUShape and Vortex Blue, whereas ProTaper Universal showed the lowest resistance to fracture. At 37°C, resistance to fatigue fracture was significantly reduced, up to 85%, for the tested instruments (P rotary instruments tested. Copyright © 2016 American Association of Endodontists. Published by Elsevier Inc. All rights reserved.

  9. High temperature electrical resistivity and Seebeck coefficient of Ge2Sb2Te5 thin films

    Science.gov (United States)

    Adnane, L.; Dirisaglik, F.; Cywar, A.; Cil, K.; Zhu, Y.; Lam, C.; Anwar, A. F. M.; Gokirmak, A.; Silva, H.

    2017-09-01

    High-temperature characterization of the thermoelectric properties of chalcogenide Ge2Sb2Te5 (GST) is critical for phase change memory devices, which utilize self-heating to quickly switch between amorphous and crystalline states and experience significant thermoelectric effects. In this work, the electrical resistivity and Seebeck coefficient are measured simultaneously as a function of temperature, from room temperature to 600 °C, on 50 nm and 200 nm GST thin films deposited on silicon dioxide. Multiple heating and cooling cycles with increasingly maximum temperature allow temperature-dependent characterization of the material at each crystalline state; this is in contrast to continuous measurements which return the combined effects of the temperature dependence and changes in the material. The results show p-type conduction (S > 0), linear S(T), and a positive Thomson coefficient (dS/dT) up to melting temperature. The results also reveal an interesting linearity between dS/dT and the conduction activation energy for mixed amorphous-fcc GST, which can be used to estimate one parameter from the other. A percolation model, together with effective medium theory, is adopted to correlate the conductivity of the material with average grain sizes obtained from XRD measurements. XRD diffraction measurements show plane-dependent thermal expansion for the cubic and hexagonal phases.

  10. Effect of the deposition temperature on corrosion resistance and biocompatibility of the hydroxyapatite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Vladescu, A., E-mail: alinava@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor Str., Magurele (Romania); Braic, M. [National Institute for Optoelectronics, 409 Atomistilor Str., Magurele (Romania); Azem, F. Ak [Dokuz Eylul University, Engineering Faculty, Metallurgical and Materials Engineering Department, Buca-Izmir (Turkey); Titorencu, I. [Institute of Cellular Biology and Pathology Nicolae Simionescu of the Romanian Academy, 8 B.P.Hasdeu, Bucharest (Romania); Braic, V. [National Institute for Optoelectronics, 409 Atomistilor Str., Magurele (Romania); Pruna, V. [Institute of Cellular Biology and Pathology Nicolae Simionescu of the Romanian Academy, 8 B.P.Hasdeu, Bucharest (Romania); Kiss, A. [National Institute for Optoelectronics, 409 Atomistilor Str., Magurele (Romania); Parau, A.C.; Birlik, I. [Dokuz Eylul University, Engineering Faculty, Metallurgical and Materials Engineering Department, Buca-Izmir (Turkey)

    2015-11-01

    Highlights: • Hydroxyapatite has been produced at temperature from 400 to 800 °C by magnetron sputtering. • Hydroxyapatite crystallinity is improved by increasing substrate temperature. • The increase of substrate temperature resulted in corrosion resistance increasing. • The coating shows high growth of the osteosarcoma cells over a wide temperature range. - Abstract: Hydroxyapatite (HAP) ceramics belong to a class of calcium phosphate-based materials, which have been widely used as coatings on titanium medical implants in order to improve bone fixation and thus to increase the lifetime of the implant. In this study, HAP coatings were deposited from pure HAP targets on Ti6Al4V substrates using the radio-frequency magnetron sputtering technique at substrate temperatures ranging from 400 to 800 °C. The surface morphology and the crystallographic structure of the films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion resistance of the coatings in saliva solution at 37 °C was evaluated by potentiodynamic polarization. Additionally, the human osteosarcoma cell line (MG-63) was used to test the biocompatibility of the coatings. The results showed that all of the coatings grown uniformly and that the increasing substrate temperature induced an increase in their crystallinity. Corrosion performance of the coatings was improved with the increase of the substrate temperature from 400 °C to 800 °C. Furthermore, all the coatings support the attachment and growth of the osteosarcoma cells with regard to the in vitro test findings.

  11. Exploration of a new method in determining the glass transition temperature of BMGs by electrical resistivity

    Science.gov (United States)

    Guo, Jing; Zu, Fangqiu; Chen, Zhihao; Zheng, Shubin; Yuan, Yuan

    2005-07-01

    Based on a brief retrospect of the method in establishing Tg of the bulk metallic glasses (BMGs), some perplexities concerning this are pointed out. With the experimental results of Zr-Al-Ni-Cu-X (Nb,Ti) BMGs, a electrical resistivity method is proposed to determine the glass transition temperature of BMGs. With the method, we define two kinds of characteristic temperature related to the glass transition, Tg-dep and Tg-int, respectively. By comparing Tg-dep and Tg-int with Tg determined by the DSC method, we have found that, for the same alloy at the same heating rate, Tg-dep is very close to Tg-onset while Tg-int is approximate to Tg-mid. As a method to determine the glass transition temperature, the electrical resistivity method has proved to be more convenient and practical in comparison with the DSC method, especially when the DSC curve cannot show the glass transition character of BMGs. In addition, we would emphasize that when we refer to Tg, it is necessary to expatiate on the way of denoting the glass transition temperature, such as Tg-dep or Tg-int ( Tg-onset or Tg-mid), and on the heating rate, in order to avoid ambiguity.

  12. Resistance of superhydrophobic and oleophobic surfaces to varied temperature applications on 316L SS

    Science.gov (United States)

    Shams, Hamza; Basit, Kanza; Saleem, Sajid; Siddiqui, Bilal A.

    316L SS also called Marine Stainless Steel is an important material for structural and marine applications. When superhydrophobic and oleophobic coatings are applied on 316L SS it shows significant resistance to wear and corrosion. This paper aims to validate the coatings manufacturer's information on optimal temperature range and test the viability of coating against multiple oil based cleaning agents. 316L SS was coated with multiple superhydrophic and oleohobic coatings and observed under SEM for validity of adhesion and thickness and then scanned under FFM to validate the tribological information. The samples were then dipped into multiple cleaning agents maintained at the range of operating temperatures specified by the manufacturer. Coating was observed for deterioration over a fixed time intervals through SEM and FFM. A comparison was drawn to validate the most critical cleaning agent and the most critical temperature at which the coating fails to leave the base substrate exposed to the environment.

  13. Investigate the electrical and thermal properties of the low temperature resistant silver nanowire fabricated by two-beam laser technique

    Science.gov (United States)

    He, Gui-Cang; Dong, Xian-Zi; Liu, Jie; Lu, Heng; Zhao, Zhen-Sheng

    2018-05-01

    A two-beam laser fabrication technique is introduced to fabricate the single silver nanowire (AgNW) on polyethylene terephthalate (PET) substrate. The resistivity of the AgNW is (1.31 ± 0.05) × 10-7 Ω·m, which is about 8 times of the bulk silver resistivity (1.65 × 10-8 Ω·m). The AgNW electrical resistance is measured in temperature range of 10-300 K and fitted with the Bloch-Grüneisen formula. The fitting results show that the residue resistance is 153 Ω, the Debye temperature is 210 K and the electron-phonon coupling constant is (5.72 ± 0.24) × 10-8 Ω·m. Due to the surface scattering, the Debye temperature and the electron-phonon coupling constant are lower than those of bulk silver, and the residue resistance is bigger than that of bulk silver. Thermal conductivity of the single AgNW is calculated in the corresponding temperature range, which is the biggest at the temperature approaching the Debye temperature. The AgNW on PET substrate is the low temperature resistance material and is able to be operated stably at such a low temperature of 10 K.

  14. High-temperature resistivity and thermoelectric properties of coupled substituted Ca3Co2O6

    Directory of Open Access Journals (Sweden)

    Meenakshisundaram Senthilkumar and Rajagopalan Vijayaraghavan

    2009-01-01

    Full Text Available Polycrystalline samples of Ca3−xNaxCo2−xMnxO6 (x=0.0–0.5 have been prepared by the sol-gel cum combustion method using sucrose in order to investigate the effects of the coupled substitution of Na and Mn on Ca and Co sites on the transport properties of Ca3Co2O6(Co326. The products were characterized by Fourier transform infrared spectroscopy, powder x-ray diffraction (XRD, thermogravimetry (TGA, differential thermal analysis and scanning electron microscopy. XRD patterns reveal the formation of single-phase products up to x=0.5. Coupled substitution increases the solubility of both Na and Mn on Ca and Co sites, respectively, in contrast to the limited solubility of Na and Mn (x=0.2 when separately substituted. TGA confirms the formation of the Ca3Co2O6 phase at temperatures ~720 °C. The grain size of the parent and substituted products is in the range 150–250 nm. Electrical resistivity and Seebeck coefficient were measured in the temperature range 300–800 K. Resistivity shows semiconducting behavior for all the compositions, particularly in the low-temperature regime. The Seebeck coefficient increases with temperature throughout the measured temperature range for all compositions. The maximum Seebeck coefficient (200 μV K−1 is observed for x=0.5 at 825 K, and this composition may be optimal for high-temperature thermoelectric applications.

  15. Influence of the ion nitriding temperature in the wear resistance of AISI H13 tool steel

    International Nuclear Information System (INIS)

    Heck, Stenio Cristaldo; Fernandes, Frederico Augusto Pires; Pereira, Ricardo Gomes; Casteletti, Luiz Carlos; Totten, George Edward

    2010-01-01

    The AISI H13 tool steel for hot work is the most used in its category. This steel was developed for injection molds and extrusion of hot metals as well as for conformation in hot presses and hammers. Plasma nitriding can improve significantly the surface properties of these steels, but the treatments conditions, such as temperature, must be optimized. In this work the influence of nitriding treatment temperature on the wear behavior of this steel is investigated. Samples of AISI H13 steel were quenched and tempered and then ion nitrided in the temperatures of 450, 550 and 650 deg C, at 4mbar pressure, during 5 hours. Samples of the treated material were characterized by optical microscopy, Vickers microhardness, x-ray analysis and wear tests. Plasma nitriding formed hard diffusion zones in all the treated samples. White layers were formed in samples treated at 550 deg C and 650 deg C. The treatment temperature of 450 deg C produced the highest hardness. Treatment temperature showed great influence in the diffusion layer thickness. X-ray analysis indicated the formation of the Fe_3N, Fe_4N and CrN phases for all temperatures, but with different concentrations. Nitriding increased significantly the AISI H13 wear resistance. (author)

  16. Temperature-stress resistance and tolerance along a latitudinal cline in North American Arabidopsis lyrata.

    Directory of Open Access Journals (Sweden)

    Guillaume Wos

    Full Text Available The study of latitudinal gradients can yield important insights into adaptation to temperature stress. Two strategies are available: resistance by limiting damage, or tolerance by reducing the fitness consequences of damage. Here we studied latitudinal variation in resistance and tolerance to frost and heat and tested the prediction of a trade-off between the two strategies and their costliness. We raised plants of replicate maternal seed families from eight populations of North American Arabidopsis lyrata collected along a latitudinal gradient in climate chambers and exposed them repeatedly to either frost or heat stress, while a set of control plants grew under standard conditions. When control plants reached maximum rosette size, leaf samples were exposed to frost and heat stress, and electrolyte leakage (PEL was measured and treated as an estimate of resistance. Difference in maximum rosette size between stressed and control plants was used as an estimate of tolerance. Northern populations were more frost resistant, and less heat resistant and less heat tolerant, but-unexpectedly-they were also less frost tolerant. Negative genetic correlations between resistance and tolerance to the same and different thermal stress were generally not significant, indicating only weak trade-offs. However, tolerance to frost was consistently accompanied by small size under control conditions, which may explain the non-adaptive latitudinal pattern for frost tolerance. Our results suggest that adaptation to frost and heat is not constrained by trade-offs between them. But the cost of frost tolerance in terms of plant size reduction may be important for the limits of species distributions and climate niches.

  17. submitter Quench Protection of Very Large, 50-GJ-Class, and High-Temperature-Superconductor-Based Detector Magnets

    CERN Document Server

    Mentink, Matthias; Mulder, Tim; Van Nugteren, Jeroen; ten Kate, Herman

    2016-01-01

    An investigation is performed on the quench behavior of a conceptual 50-GJ 8-T high-temperature-superconductor-based solenoid. In this design, a 50-kA conductor-on-round-core cable-in-conduit conductor utilizing ReBCO technology is envisioned, operating at 40 K. Various properties such as resistivity, thermal conductivity, and heat capacity are very different at this temperature, which affects the quench behavior. It is found that the envisioned conductor is very stable with a minimum quench energy of about 2 kJ. However, the quench propagation velocity is typically about 20 mm/s, so that creating a wide-spread normal zone throughout the coil is very challenging. Moreover, an extraction voltage exceeding 20 kV would be required to ensure a hot-spot temperature below 100 K once a thermal runaway occurs. A novel concept dubbed “rapid quench transformation” is proposed whereby the superconducting conductor is co-wound with a normal conductor to achieve a high degree of inductive coupling. This geometry allow...

  18. TiFeCoNi oxide thin film - A new composition with extremely low electrical resistivity at room temperature

    International Nuclear Information System (INIS)

    Yang, Ya-Chu; Tsau, Chun-Huei; Yeh, Jien-Wei

    2011-01-01

    We show the electrical resistivity of a TiFeCoNi oxide thin film. The electrical resistivity of the TiFeCoNi thin film decreased sharply after a suitable period of oxidation at high temperature. The lowest resistivity of the TiFeCoNi oxide film was 35 ± 3 μΩ-cm. The low electrical resistivity of the TiFeCoNi oxide thin film was attributed to Ti, which is more reactive than the other elements, reacting with oxygen at the initial stage of annealing. The low resistivity is caused by the remaining electrons.

  19. Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

    International Nuclear Information System (INIS)

    Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

    2014-01-01

    In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

  20. Modeling heat resistance of Bacillus weihenstephanensis and Bacillus licheniformis spores as function of sporulation temperature and pH.

    Science.gov (United States)

    Baril, Eugénie; Coroller, Louis; Couvert, Olivier; Leguérinel, Ivan; Postollec, Florence; Boulais, Christophe; Carlin, Frédéric; Mafart, Pierre

    2012-05-01

    Although sporulation environmental factors are known to impact on Bacillus spore heat resistance, they are not integrated into predictive models used to calculate the efficiency of heating processes. This work reports the influence of temperature and pH encountered during sporulation on heat resistance of Bacillus weihenstephanensis KBAB4 and Bacillus licheniformis AD978 spores. A decrease in heat resistance (δ) was observed for spores produced either at low temperature, at high temperature or at acidic pH. Sporulation temperature and pH maximizing the spore heat resistance were identified. Heat sensitivity (z) was not modified whatever the sporulation environmental factors were. A resistance secondary model inspired by the Rosso model was proposed. Sporulation temperatures and pHs minimizing or maximizing the spore heat resistance (T(min(R)), T(opt(R)), T(max(R)), pH(min(R)) and pH(opt(R))) were estimated. The goodness of the model fit was assessed for both studied strains and literature data. The estimation of the sporulation temperature and pH maximizing the spore heat resistance is of great interest to produce spores assessing the spore inactivation in the heating processes applied by the food industry. Copyright © 2011 Elsevier Ltd. All rights reserved.

  1. Monitoring of high temperature area by resistivity tomography during in-situ heating test in sedimentary soft rocks

    International Nuclear Information System (INIS)

    Kubota, Kenji; Suzuki, Koichi; Ikenoya, Takafumi; Takakura, Nozomu; Tani, Kazuo

    2009-01-01

    One of the major issues in disposal of nuclear waste is that the long term behaviors of sedimentary soft rocks can be affected by various environmental factors such as temperature, mechanical conditions or hydraulic conditions. Therefore, it is necessary to develop a method for evaluating the long term stability of caverns in sedimentary soft rocks as subjected to changes of environment. We have conducted in-situ heating test to evaluate the influence of high temperature to the surrounding rock mass at a depth of 50 m. The well with a diameter of 30 cm and 60 cm of height, was drilled and filled with groundwater. The heater was installed in the well for heating the surrounding rock mass. During the heating, temperature and deformation around the well were measured. To evaluate the influence of heating on sedimentary soft rocks, it is important to monitor the extent of heated area. Resistivity monitoring is thought to be effective to map the extent of the high temperature area. So we have conducted resistivity tomography during the heating test. The results demonstrated that the resistivity of the rock mass around the heating well decreased and this area was gradually expanded from the heated area during the heating. The decreasing rate of resistivity on temperature is correlated to that of laboratory experimental result and existing empirical formula between aqueous solution resistivity and temperature. Resistivity is changed by many other factors, but it is expected that resistivity change by other factors is very few in this test. This suggests that high temperature area is detected and spatial distribution of temperature can be mapped by resistivity tomography. So resistivity tomography is expected to be one of the promising methods to monitor the area heated by nuclear waste. (author)

  2. SQUIDs in thermal detectors of weakly interacting particles

    International Nuclear Information System (INIS)

    Trofimov, V.N.

    1991-01-01

    The application of four different types of SQUID-assisted thermometers for cryogenic thermal detectors of weakly interacting particles is analyzed with two of them for the first time. The classic resistive thermometer is considered as well for the comparison. Original results of testing the detector with working temperature of 1K and thermocouple thermometer with SQUID are given. The conclusion is made that temperature resolution of 10 -10 kHz -1/2 or energy sensitivity of 1-10 eV per 1 kg of detector mass can be achieved when using the SQUID-assisted thermometers. 12 refs.; 7 figs.; 1 tab

  3. Calorimetric Low-Temperature Detectors for X-Ray Spectroscopy on Trapped Highly-Charged Heavy Ions

    Science.gov (United States)

    Kilbourne, Caroline; Kraft-Bermuth, S.; Andrianov, V.; Bleile, A.; Echler, A.; Egelhof, P.; Ilieva, S.; Kilbourne, C.; McCammon, D.

    2012-01-01

    The application of Calorimetric Low-Temperature Detectors (CLTDs) has been proposed at the Heavy-Ion TRAP facility HITRAP which is currently being installed at the Helmholtz Research Center for Heavy Ion Research GSI. This cold ion trap setup will allow the investigation of X-rays from ions practically at rest, for which the excellent energy resolution of CLTDs can be used to its full advantage. However, the relatively low intensities at HITRAP demand larger solid angles and an optimized cryogenic setup. The influence of external magnetic fields has to be taken into account. CLTDs will also be a substantial part of the instrumental equipment at the future Facility for Antiproton and Heavy Ion Research (FAIR), for which a wide variety of high-precision X-ray spectroscopy experiments has been proposed. This contribution will give an overview on the chances and challenges for the application of CLTDs at HITRAP as well as perspectives for future experiments at the FAIR facility.

  4. Low temperature resistivity studies of SmB6: Observation of two-dimensional variable-range hopping conductivity

    Science.gov (United States)

    Batkova, Marianna; Batko, Ivan; Gabáni, Slavomír; Gažo, Emil; Konovalova, Elena; Filippov, Vladimir

    2018-05-01

    We studied electrical resistance of a single-crystalline SmB6 sample with a focus on the region of the "low-temperature resistivity plateau". Our observations did not show any true saturation of the electrical resistance at temperatures below 3 K down to 70 mK. According to our findings, temperature dependence of the electrical conduction in a certain temperature interval above 70 mK can be decomposed into a temperature-independent term and a temperature-activated term that can be described by variable-range hopping formula for two-dimensional systems, exp [ -(T0 / T) 1 / 3 ]. Thus, our results indicate importance of hopping type of electrical transport in the near-surface region of SmB6.

  5. Effect of heat treatment conditions on stress corrosion cracking resistance of alloy X-750 in high temperature water

    International Nuclear Information System (INIS)

    Yonezawa, Toshio; Onimura, Kichiro; Sakamoto, Naruo; Sasaguri, Nobuya; Susukida, Hiroshi; Nakata, Hidenori.

    1984-01-01

    In order to improve the resistance of the Alloy X-750 in high temperature and high purity water, the authors investigated the influence of heat treatment condition on the stress corrosion cracking resistance of the alloy. This paper describes results of the stress corrosion cracking test and some discussion on the mechanism of the stress corrosion cracking of Alloy X-750 in deaerated high temperature water. The following results were obtained. (1) The stress corrosion cracking resistance of Alloy X-750 in deaerated high temperature water remarkably depended upon the heat treatment condition. The materials solution heat treated and aged within temperature ranges from 1065 to 1100 0 C and from 704 to 732 0 C, respectively, have a good resistance to the stress corrosion cracking in deaerated high temperature water. Especially, water cooling after the solution heat treatment gives an excellent resistance to the stress corrosion cracking in deaerated high temperature water. (2) Any correlations were not observed between the stress corrosion cracking susceptibility of Alloy X-750 in deaerated high temperature water and grain boundary chromium depleted zones, precipitate free zones and the grain boundary segregation of impurity elements and so on. It appears that there are good correlations between the stress corrosion cracking resistance of the alloy in the environment and the kinds, morphology and coherency of precipitates along the grain boundaries. (author)

  6. Electrical resistivity, Hall coefficient and electronic mobility in indium antimonide at different magnetic fields and temperatures

    International Nuclear Information System (INIS)

    Jee, Madan; Prasad, Vijay; Singh, Amita

    1995-01-01

    The electrical resistivity, Hall coefficient and electronic mobility of n-type and p-type crystals of indium antimonide have been measured from 25 degC-100 degC temperature range. It has been found by this measurement that indium antimonide is a compound semiconductor with a high mobility 10 6 cm 2 /V.S. The Hall coefficient R H was measured as a function of magnetic field strength H for a number of samples of both p and n-type using fields up to 12 kilo gauss. The Hall coefficient R h decreases with increasing magnetic fields as well as with increase in temperature of the sample. The electric field is more effective on samples with high mobilities and consequently the deviations from linearity are manifested at comparatively low values of the electric field. The measurement of R H in weak and strong magnetic fields makes it possible to determine the separate concentration of heavy and light holes. Measured values of Hall coefficient and electrical resistivity show that there is a little variation of ρ and R h with temperatures as well as with magnetic fields. (author). 12 refs., 5 tabs

  7. Dynamics of antibiotic resistance genes and presence of putative pathogens during ambient temperature anaerobic digestion.

    Science.gov (United States)

    Resende, J A; Diniz, C G; Silva, V L; Otenio, M H; Bonnafous, A; Arcuri, P B; Godon, J-J

    2014-12-01

    This study was focused on evaluating the persistency of antimicrobial resistance (AR) genes and putative pathogenic bacteria in an anaerobic digesters operating at mesophilic ambient temperature, in two different year seasons: summer and winter. Abundance and dynamic of AR genes encoding resistance to macrolides (ermB), aminoglycosides (aphA2) and beta-lactams (blaTEM -1 ) and persistency of potentially pathogenic bacteria in pilot-scale anaerobic digesters were investigated. AR genes were determined in the influent and effluent in both conditions. Overall, after 60 days, reduction was observed for all evaluated genes. However, during the summer, anaerobic digestion was more related to the gene reduction as compared to winter. Persistency of potentially pathogenic bacteria was also evaluated by metagenomic analyses compared to an in-house created database. Clostridium, Acinetobacter and Stenotrophomonas were the most identified. Overall, considering the mesophilic ambient temperature during anaerobic digestion (summer and winter), a decrease in pathogenic bacteria detection through metagenomic analysis and AR genes is reported. Although the mesophilic anaerobic digestion has been efficient, the results may suggest medically important bacteria and AR genes persistency during the process. This is the first report to show AR gene dynamics and persistency of potentially pathogenic bacteria through metagenomic approach in cattle manure ambient temperature anaerobic digestion. © 2014 The Society for Applied Microbiology.

  8. The negative temperature coefficient resistivities of Ag2S-Ag core–shell structures

    International Nuclear Information System (INIS)

    Yu, Mingming; Liu, Dongzhi; Li, Wei; Zhou, Xueqin

    2014-01-01

    In this paper, the conductivity of silver nanoparticle films protected by 3-mercaptopropionic acid (Ag/MPA) has been investigated. When the nanoparticles were annealed in air at 200 °C, they converted to stable Ag 2 S-Ag core–shell structures. The mechanism for the formation of the Ag 2 S-Ag core–shell structures along with the compositional changes and the microstructural evolution of the Ag/MPA nanoparticles during the annealing process are discussed. It is proposed that the Ag 2 S-Ag core–shell structure was formed through a solid-state reduction reaction, in which the Ag + ions coming from Ag 2 S were reduced by sulfonate species and sulfur ions. The final Ag 2 S-Ag films display an exponentially decreased resistivity with increasing temperature from 25 to 170 °C. The negative temperature coefficient resistivity of Ag 2 S-Ag films can be adjusted by changing the S/Ag molar ratio used for the synthesis of the Ag/MPA nanoparticles, paving the way for the preparation of negative temperature-coefficient thermistors via printing technology for use in the electronics.

  9. Low temperature tensile properties and stress corrosion cracking resistance in the super duplex stainless steels weldments

    International Nuclear Information System (INIS)

    Lee, Jeung Woo; Sung, Jang Hyun; Lee, Sung Keun

    1998-01-01

    Low temperature tensile properties and SCC resistances of super duplex stainless steels and their weldments are investigated. Tensile strengths increase remarkably with decreasing test temperature, while elongations decrease steeply at -196 .deg. C after showing peak or constant value down to -100 .deg. C. Owing to the low tensile deformation of weld region, elongations of welded specimen decrease in comparison to those of unwelded specimen. The welded tensile specimen is fractured through weld region at -196 .deg. C due to the fact that the finely dispersed ferrite phase in the austenite matrix increases an opportunity to supply the crack propagation path through the brittle ferrite phase at low temperature. The stress corrosion cracking initiates preferentially at the surface ferrite phase of base metal region and propagates through ferrite phase. When the corrosion crack meets with the fibrously aligned austenite phase to the tensile direction, the ferrite phase around austenite continues to corrode. Eventually, fracture of the austenite phase begins without enduring the tensile load. The addition of Cu+W to the super duplex stainless steel deteriorates the SCC resistance in boiling MgCl 2 solution, possibly due to the increment of pits in the ferrite phase and reduction of N content in the austenite phase

  10. High carotenoids content can enhance resistance of selected Pinctada fucata families to high temperature stress.

    Science.gov (United States)

    Meng, Zihao; Zhang, Bo; Liu, Baosuo; Li, Haimei; Fan, Sigang; Yu, Dahui

    2017-02-01

    Carotenoids are a class of natural antioxidants widely found in aquatic, and they have significant effects on the growth, survival, and immunity of these organisms. To investigate the mechanisms of carotenoids in high temperature resistance, we observed the immune response of selected pearl oyster Pinctada fucata (Akoya pearl oyster) families with different carotenoids contents to high temperature stress. The results indicated that the survival rate (SR) of P. fucata decreased significantly with increase in temperature from 26 °C to 34 °C and with the decrease of total carotenoids content (TCC); when the TCC was higher, the SR tended to be higher. TCC and total antioxidant capacity (TAC) decreased significantly at 30 °C with increasing stress time. Correlation analysis indicated that TAC was positively and linearly correlated with TCC, and SR was S-type correlated with TCC and TAC. Immune analysis indicated that levels of superoxide dismutase (SOD), catalase (CAT), and malondialdehyde (MDA) in selected families (with higher TCC) under temperature stress (at 30 °C) were generally significantly lower than in the control group (with lowest TCC) and from 0 to 96 h, the levels of each of these substances varied significantly. Levels of SOD, CAT, and MDA within each family first rose from 0 to 3 h, then decreased to their lowest point after 24 h, and then rose again to their highest levels at 96 h. When TCC was higher, the levels of SOD, CAT, and MDA tended to be lower. These findings indicated that carotenoids play an important role in improving survival rates of P. fucata under high temperature stress by enhancing animals' antioxidant system, and could serve as an index for breeding stress-resistant lines in selective breeding practices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Low temperature resistivity plateau and non-saturating magnetoresistance in Type-II Weyl semimetal WP2

    Science.gov (United States)

    Nagpal, V.; Kumar, P.; Sudesh, Patnaik, S.

    2018-04-01

    We have studied the resistivity and magnetoresistance (MR) properties of the recently predicted type-II Weyl semimetal WP2. Polycrystalline WP2 is synthesized using solid state reaction and crystallizes in an orthorhombic structure with the Cmc21 spacegroup. The temperature dependent resistivity is enhanced with the application of magnetic field and a resistivity plateau is observed at low temperatures. We find a small dip in resistivity around 30K at 5T field suggesting that there might be a metal-insulator-like transition at higher magnetic fields. A non-saturating magnetoresistance is observed at low temperatures with maximum MR ˜ 94% at 2K and 6T. The value of MR decreases with the increase in temperature. We see a deviation from Kohler's power law which implies that the system comprises of two types of charge carriers.

  12. Operation of Silicon, Diamond and liquid Helium Detectors in the range of Room Temperature to 1.9 K and after an Irradiation Dose of several Mega Gray

    CERN Document Server

    Kurfuerst, C; Dehning, B; Eisel, T; Sapinski, M; Eremin, V

    2013-01-01

    At the triplet magnets, close to the interaction regions of the Large Hadron Collider (LHC), the current Beam Loss Monitoring (BLM) system is sensitive to the debris from the collision points. For future beams, with higher energy and intensity the expected increase in luminosity implicate an increase of the debris from interaction products covering the quench-provoking beam losses from the primary proton beams. The investigated option is to locate the detectors as close as possible to the superconducting coil, where the signal ratio of both is optimal. Therefore the detectors have to be located inside the cold mass of the superconducting magnets in superfluid helium at 1.9 Kelvin. Past measurements have shown that a liquid helium ionisation chamber, diamond and silicon detectors are promising candidates for cryogenic beam loss monitors. The carrier parameter, drift velocity, and the leakage current changes will be shown as a function of temperature. New high irradiation test beam measurements at room temperat...

  13. Evaluation of a portable gas chromatograph with photoionization detector under variations of VOC concentration, temperature, and relative humidity.

    Science.gov (United States)

    Soo, Jhy-Charm; Lee, Eun Gyung; LeBouf, Ryan F; Kashon, Michael L; Chisholm, William; Harper, Martin

    2018-04-01

    The objective of this present study was to evaluate the performance of a portable gas chromatograph-photoionization detector (GC-PID), under various test conditions to determine if it could be used in occupational settings. A mixture of 7 volatile organic compounds (VOCs)-acetone, ethylbenzene, methyl isobutyl ketone, toluene, m-xylene, p-xylene, and o-xylene-was selected because its components are commonly present in paint manufacturing industries. A full-factorial combination of 4 concentration levels (exposure scenarios) of VOC mixtures, 3 different temperatures (25°C, 30°C, and 35°C), and 3 relative humidities (RHs; 25%, 50%, and 75%) was conducted in a full-size controlled environmental chamber. Three repetitions were conducted for each test condition allowing for estimation of accuracy. Time-weighted average exposure data were collected using solid sorbent tubes (Anasorb 747, SKC Inc.) as the reference sampling medium. Calibration curves of Frog-4000 using the dry gases showed R 2 > 0.99 for all analytes except for toluene (R 2 = 0.97). Frog-4000 estimates within a test condition showed good consistency for the performance of repeated measurement. However, there was ∼41-64% reduction in the analysis of polar acetone with 75% RH relative to collection at 25% RH. Although Frog-4000 results correlated well with solid sorbent tubes (r = 0.808-0.993, except for toluene) most of the combinations regardless of analyte did not meet the <25% accuracy criterion recommended by NIOSH. The effect of chromatographic co-elution can be seen with m, p-xylene when the results are compared to the sorbent tube sampling technique with GC-flame ionization detector. The results indicated an effect of humidity on the quantification of the polar compounds that might be attributed to the pre-concentrator placed in the selected GC-PID. Further investigation may resolve the humidity effect on sorbent trap with micro GC pre-concentrator when water vapor is present. Although this

  14. Microstructural Stability and Oxidation Resistance of 9-12 Chromium Steels at Elevated Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Dogan, O.N.; Alman, D.E.; Jablonski, P.D.; Hawk, J.A.

    2006-05-01

    Various martensitic 9-12 Cr steels are utilized currently in fossil fuel powered energy plants for their good elevated temperature properties such as creep strength, steam side oxidation resistance, fire side corrosion resistance, and thermal fatigue resistance. Need for further improvements on the properties of 9-12 Cr steels for higher temperature (>600oC) use is driven by the environmental concerns (i.e., improve efficiency to reduce emissions and fossil fuel consumption). In this paper, we will discuss the results of the research done to explore new subsitutional solute solution and precipitate hardening mechanisms for improved strength of 9-12 Cr martensitic steels. Stability of the phases present in the steels will be evaluated for various temperature and time exposures. A comparison of microstructural properties of the experimental steels and commercial steels will also be presented.

    The influence of a Ce surface treatment on oxidation behavior of a commercial (P91) and several experimental steels containing 9 to 12 weight percent Cr was examined at 650ºC in flowing dry and moist air. The oxidation behavior of all the alloys without the Ce modification was significantly degraded by the presence of moisture in the air during testing. For instance the weight gain for P91 was two orders of magnitude greater in moist air than in dry air. This was accompanied by a change in oxide scale from the formation of Cr-based scales in dry air to the formation of Fe-based scales in moist air. The Ce surface treatment was very effective in improving the oxidation resistance of the experimental steels in both moist and dry air. For instance, after exposure to moist air at 650ºC for 2000 hours, an experimental alloy with the cerium surface modification had a weight gain three orders of magnitude lower than the alloy without the Ce modification and two orders of magnitude lower than P91. The Ce surface treatment suppressed the formation of Fe-based scales and

  15. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    OpenAIRE

    Birkett, Martin; Penlington, Roger

    2016-01-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10–1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10–25 nm the ...

  16. VARIATION OF SUBSTRUCTURES OF PEARLITIC HEAT RESISTANT STEEL AFTER HIGH TEMPERATURE AGING

    Institute of Scientific and Technical Information of China (English)

    R.C.Yang; K.Chen; H.X.Feng; H.Wang

    2004-01-01

    The observations of dislocations, substructures and other microstructural details were conducted mainly by means of transmission electron microscope (TEM) and scanning electron microscope (SEM) for 12Cr1Mo V pearlitic heat-resistant steel. It is shown that during the high temperature long-term aging, the disordered and jumbled phasetransformed dislocations caused by normalized cooling are recovered and rearranged into cell substructures, and then the dislocation density is reduced gradually. Finally a low density linear dislocation configuration and a stabler dislocation network are formed and ferritic grains grow considerably.

  17. Statistical analysis of LHC main interconnection splices room temperature resistance (R-8) results

    CERN Document Server

    Heck, S

    2012-01-01

    During the 2008/2009 shutdown the so-called R-8/R-16 room temperature resistance test has been introduced for the quality control of the LHC main interconnection splices. It has been found that at present two groups of LHC main interconnection splices can be distinguished, so-called “old” splices produced during LHC installation, and so-called “new” splices produced during 2009. 2009 production splices are considered as the state-of-the art, which is reflected by a much smaller R-8 distribution as compared to that of splices produced during first LHC installation.

  18. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  19. Global analysis of the temperature and flow fields in samples heated in multizone resistance furnaces

    Science.gov (United States)

    Pérez-Grande, I.; Rivas, D.; de Pablo, V.

    The temperature field in samples heated in multizone resistance furnaces will be analyzed, using a global model where the temperature fields in the sample, the furnace and the insulation are coupled; the input thermal data is the electric power supplied to the heaters. The radiation heat exchange between the sample and the furnace is formulated analytically, taking into account specular reflections at the sample; for the solid sample the reflectance is both diffuse and specular, and for the melt it is mostly specular. This behavior is modeled through the exchange view factors, which depend on whether the sample is solid or liquid, and, therefore, they are not known a priori. The effect of this specular behavior in the temperature field will be analyzed, by comparing with the case of diffuse samples. A parameter of great importance is the thermal conductivity of the insulation material; it will be shown that the temperature field depends strongly on it. A careful characterization of the insulation is therefore necessary, here it will be done with the aid of experimental results, which will also serve to validate the model. The heating process in the floating-zone technique in microgravity conditions will be simulated; parameters like the Marangoni number or the temperature gradient at the melt-crystal interface will be estimated. Application to the case of compound samples (graphite-silicon-graphite) will be made; the temperature distribution in the silicon part will be studied, especially the temperature difference between the two graphite rods that hold the silicon, since it drives the thermocapillary flow in the melt. This flow will be studied, after coupling the previous model with the convective effects. The possibility of suppresing this flow by the controlled vibration of the graphite rods will be also analyzed. Numerical results show that the thermocapillary flow can indeed be counterbalanced quite effectively.

  20. Superconducting Mercury-Based Cuprate Films with a Zero-Resistance Transition Temperature of 124 Kelvin

    Science.gov (United States)

    Tsuei, C. C.; Gupta, A.; Trafas, G.; Mitzi, D.

    1994-03-01

    The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O_2 environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa_2CaCu_2O6+δ films has been achieved.

  1. Superconducting mercury-based cuprate films with a zero-resistance transition temperature of 124 Kelvin.

    Science.gov (United States)

    Tsuei, C C; Gupta, A; Trafas, G; Mitzi, D

    1994-03-04

    The synthesis of high-quality films of the recently discovered mercury-based cuprate films with high transition temperatures has been plagued by problems such as the air sensitivity of the cuprate precursor and the volatility of Hg and HgO. These processing difficulties have been circumvented by a technique of atomic-scale mixing of the HgO and cuprate precursors, use of a protective cap layer, and annealing in an appropriate Hg and O(2) environment. With this procedure, a zero-resistance transition temperature as high as 124 kelvin in c axis-oriented epitaxial HgBa(2)CaCu(2)O(6+delta) films has been achieved.

  2. 9% Cr steel high temperature oxidation. Solutions investigated for improving corrosion resistance of the steel

    Energy Technology Data Exchange (ETDEWEB)

    Evin, Harold Nicolas; Heintz, Olivier; Chevalier, Sebastien [UMR 5209 CNRS-Bourgogne Univ. (France). Lab. Interdisciplinaire Carnot de Bourgogne; Foejer, Cecilia; Jakani, Saad; Dhont, Annick; Claessens, Serge [OCAS N.V. ArcelorMittal Global R and D, Gent (Belgium)

    2010-07-01

    The improvement of high temperature oxidation resistance of low chromium content steels, such as T/P91, is of great interest in regards with their application in thermal power generating plants. Indeed, they possess good creep properties, but are facing their limits of use at temperature higher than 600 C, due to accelerated corrosion phenomena. Good knowledge of the mechanisms involved during their oxidation process is needed to prevent the degradation of the materials and to extend life time of the power plants components. Oxide layers thermally grown, on 9% Cr steels (provided by OCAS N.V), during isothermal tests between 600 C and 750 C in laboratory air under atmospheric pressure were investigated, by Scanning Electron Microscopy (SEM) and X-ray diffraction (XRD). The oxidation behaviour appeared very limited at 750 C, due to the presence of a breakaway, which can be linked to iron porous oxide grown over the surface of the samples. ''In situ'' X-ray Photoelectron spectroscopy (XPS) analyses were performed in air at 600 C after short exposures (between 5 min and 25 h). A complex mixture of iron oxide, Cr{sub 2}O{sub 3} and Cr (VI) species were characterized in the scales. The in-situ analyses were compared and related to XPS analyses performed on thick oxide scales formed on samples oxidized in air at 600 C for 100h. An oxidation mechanism is then proposed to understand the oxide scale growth in the temperature range 600 - 750 C. The second step of this study consists in improving the high temperature corrosion resistance of these steels without modifying their mechanical properties. Thus several solutions were investigated such as MOCVD coatings, pack cementation coatings, and tested in cycle conditions prior. (orig.)

  3. Fracture resistance of the VNC-2USh steel with different content of diffusion-mobile hydrogen at low temperature

    International Nuclear Information System (INIS)

    Yablonskij, I.S.; Sankho, K.

    1979-01-01

    Presented are the investigation results for the diffusible hydrogen (DH) content effect on cracking resistance and mechanical properties of the VNC-2USh steel in the temperature range from -75-100 deg C. In this range σsub(B), σsub(0.2) and σ are not practically sensitive to the DH content change from 0.27 to 3 cm 3 /100g. At room temperature the increase of DH content in the above concentration range results in 45 % decrease of cracking resistance under static loading. At -75 deg C the cracking resistance does not depend on DH content. Within the temperature range from -40-75 deg C placed is a temperature boundary, separating the regions of predominant effects of hydrogen and low temperature embrittlement on repture strength of the VNC-2 steel at moderated rates of deformation

  4. Development of high temperature resistant geomembranes for oil sands secondary containments

    Energy Technology Data Exchange (ETDEWEB)

    Mills, A. [Layfield Environmental Systems Ltd., Edmonton, AB (Canada); Martin, D. [Layfield Geosynthetics and Industrial Fabrics Ltd., Edmonton, AB (Canada)

    2008-07-01

    Plastic liner materials are often adversely impacted by chemicals at elevated temperatures. Heat accelerates the oxidation of the polymeric chains, which in turn accelerates the degradation of the plastic. This paper discussed geomembrane containment systems placed under heated petroleum storage tanks at an oil sands processing plant. Various high temperature-resistant geomembrane materials were tested. Compatibility testing procedures for the various fluids contained by the systems were outlined. Installation procedures for the membranes were also discussed. The membrane systems were designed for use with heavy gas oil; light gas oil; and naphtha. Temperatures in the ground below the tanks were approximately 79 degrees C. Testing was done using sealed containers held in an oil bath at temperatures of 105 degrees C. Heat applied to the chemicals during the tests pressurized the test vessels. Liner materials used in the initial tests included an ester-based thermoplastic polyurethane liner; high density polyethylene (HDPE); linear low-density polyethylene (LLDPE), polypropylene (PP) olefins; polyvinyl chloride (PVC); and polyvinylidene (PVDF) materials. A second set of tests was then conducted using alloy materials and PVC. Heat stability tests demonstrated that the blue 0.75 mm alloy showed a tensile strength ratio within the industry's 15 per cent pass criteria. The samples were then tested with diluted bitumen and diluents at 65, 85 and 100 degrees C. The developed liners were installed underneath petroleum tanks with leak detection chambers. It was concluded that the geomembrane liners prevented the hot liquids from leaking. 4 refs., 8 tabs.

  5. Room temperature negative differential resistance in terahertz quantum cascade laser structures

    Energy Technology Data Exchange (ETDEWEB)

    Albo, Asaf, E-mail: asafalbo@gmail.com; Hu, Qing [Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Reno, John L. [Center for Integrated Nanotechnologies, Sandia National Laboratories, MS 1303, Albuquerque, New Mexico 87185-1303 (United States)

    2016-08-22

    The mechanisms that limit the temperature performance of GaAs/Al{sub 0.15}GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal optical transition and higher barriers should significantly reduce the adverse effects of both mechanisms and lead to improved temperature performance. Here, we study the temperature performance of highly diagonal THz-QCLs with high barriers. Our analysis uncovers an additional leakage channel which is the thermal excitation of carriers into bounded higher energy levels, rather than the escape into the continuum. Based on this understanding, we have designed a structure with an increased intersubband spacing between the upper lasing level and excited states in a highly diagonal THz-QCL, which exhibits negative differential resistance even at room temperature. This result is a strong evidence for the effective suppression of the aforementioned leakage channel.

  6. Microstructure of Al-Si Slurry Coatings on Austenitic High-Temperature Creep Resisting Cast Steel

    Directory of Open Access Journals (Sweden)

    Agnieszka E. Kochmańska

    2018-01-01

    Full Text Available This paper presents the results of microstructural examinations on slurry aluminide coatings using scanning electron microscopy, X-ray microanalysis, and X-ray diffraction. Aluminide coatings were produced in air atmosphere on austenitic high-temperature creep resisting cast steel. The function of aluminide coatings is the protection of the equipment components against the high-temperature corrosion in a carburising atmosphere under thermal shock conditions. The obtained coatings had a multilayered structure composed of intermetallic compounds. The composition of newly developed slurry was powders of aluminium and silicon; NaCl, KCl, and NaF halide salts; and a water solution of a soluble glass as an inorganic binder. The application of the inorganic binder in the slurry allowed to produce the coatings in one single step without additional annealing at an intermediate temperature as it is when applied organic binder. The coatings were formed on both: the ground surface and on the raw cast surface. The main technological parameters were temperature (732–1068°C and time of annealing (3.3–11.7 h and the Al/Si ratio (4–14 in the slurry. The rotatable design was used to evaluate the effect of the production parameters on the coatings thickness. The correlation between the technological parameters and the coating structure was determined.

  7. Development of High Temperature/High Sensitivity Novel Chemical Resistive Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chunrui [Univ. of Texas, San Antonio, TX (United States); Enriquez, Erik [Univ. of Texas, San Antonio, TX (United States); Wang, Haibing [Univ. of Texas, San Antonio, TX (United States); Xu, Xing [Univ. of Texas, San Antonio, TX (United States); Bao, Shangyong [Univ. of Texas, San Antonio, TX (United States); Collins, Gregory [Univ. of Texas, San Antonio, TX (United States)

    2013-08-13

    The research has been focused to design, fabricate, and develop high temperature/high sensitivity novel multifunctional chemical sensors for the selective detection of fossil energy gases used in power and fuel systems. By systematically studying the physical properties of the LnBaCo2O5+d (LBCO) [Ln=Pr or La] thin-films, a new concept chemical sensor based high temperature chemical resistant change has been developed for the application for the next generation highly efficient and near zero emission power generation technologies. We also discovered that the superfast chemical dynamic behavior and an ultrafast surface exchange kinetics in the highly epitaxial LBCO thin films. Furthermore, our research indicates that hydrogen can superfast diffuse in the ordered oxygen vacancy structures in the highly epitaxial LBCO thin films, which suggest that the LBCO thin film not only can be an excellent candidate for the fabrication of high temperature ultra sensitive chemical sensors and control systems for power and fuel monitoring systems, but also can be an excellent candidate for the low temperature solid oxide fuel cell anode and cathode materials.

  8. A new steel with good low-temperature sulfuric acid dew point corrosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, X.Q.; Li, X.G. [Corrosion and Protection Center, University of Science and Technology Beijing (China); Key Laboratory of Corrosion and Protection (Ministry of Education), Beijing (China); Sun, F.L. [Corrosion and Protection Center, University of Science and Technology Beijing (China); Lv, S.J. [Corrosion and Protection Center, University of Science and Technology Beijing (China); Equipment and Power Department, Shijiazhuang Refine and Chemical Company Limited, SINOPEC, Shijiazhuang (China)

    2012-07-15

    In this work, new steels (1, 2, and 3) were developed for low-temperature sulfuric acid dew point corrosion. The mass loss rate, macro- and micro-morphologies and compositions of corrosion products of new steels in 10, 30, and 50% H{sub 2}SO{sub 4} solutions at its corresponding dew points were investigated by immersion test, scanning electron microscopy (SEM) and energy-dispersive spectrometry (EDS). The results indicated that mass loss rate of all the tested steels first strongly increased and then decreased as H{sub 2}SO{sub 4} concentration increased, which reached maximum at 30%. Corrosion resistance of 2 steel is the best among all specimens due to its fine and homogeneous morphologies of corrosion products. The electrochemical corrosion properties of new steels in 10 and 30% H{sub 2}SO{sub 4} solutions at its corresponding dew points were studied by potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) techniques. The results demonstrated that corrosion resistance of 2 steel is the best among all the experimental samples due to its lowest corrosion current density and highest charge transfer resistance, which is consistent with the results obtained from immersion tests. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Critical-temperature inhomogeneities and resistivity rounding in copper oxide superconductors

    International Nuclear Information System (INIS)

    Maza, J.; Vidal, F.

    1991-01-01

    By using effective-medium approaches, we obtain the onset of the electrical-resistivity rounding, above the normal-superconducting transition, associated with inhomogeneities of the mean-field critical temperature T c0 at scales larger than the superconducting correlation length. These results are compared with available data in single-crystal and single-phase (to within 4%) polycrystalline YBa 2 Cu 3 O 7-δ samples. This comparison shows that the measured resistivity rounding cannot be explained by these types of local T c0 inhomogeneities. Complementarily, our calculations allow us to check some proposals on T c0 inhomogeneities associated with local sample strains or oxygen-content variations. The interplay between T c0 inhomogeneities and superconducting order-parameter fluctuations (SCOPF) leads to the conclusion that in the mean-field-like region (MFR) above the superconducting transition, the T c0 inhomogeneity contribution to the measured resistivity rounding in high-quality (single-phase) cuprate oxide superconductors is negligible. In contrast, our analysis confirms that in the MFR these effects may be explained quantitatively on the grounds of the Lawrence-Doniach theory for SCOPF

  10. X-ray response of CdZnTe detectors grown by the vertical Bridgman technique: Energy, temperature and high flux effects

    Energy Technology Data Exchange (ETDEWEB)

    Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Gerardi, G.; Turturici, A.A.; Raso, G. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Benassi, G. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Bettelli, M. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Zambelli, N. [due2lab s.r.l., Via Paolo Borsellino 2, Scandiano, Reggio Emilia 42019 (Italy); Zappettini, A. [IMEM/CNR, Parco Area delle Scienze 37/A, Parma 43100 (Italy); Principato, F. [Dipartimento di Fisica e Chimica (DiFC), Università di Palermo, Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

    2016-11-01

    Nowadays, CdZnTe (CZT) is one of the key materials for the development of room temperature X-ray and gamma ray detectors and great efforts have been made on both the device and the crystal growth technologies. In this work, we present the results of spectroscopic investigations on new boron oxide encapsulated vertical Bridgman (B-VB) grown CZT detectors, recently developed at IMEM-CNR Parma, Italy. Several detectors, with the same electrode layout (gold electroless contacts) and different thicknesses (1 and 2.5 mm), were realized: the cathode is a planar electrode covering the detector surface (4.1×4.1 mm{sup 2}), while the anode is a central electrode (2×2 mm{sup 2}) surrounded by a guard-ring electrode. The detectors are characterized by electron mobility-lifetime product (µ{sub e}τ{sub e}) values ranging between 0.6 and 1·10{sup −3} cm{sup 2}/V and by low leakage currents at room temperature and at high bias voltages (38 nA/cm{sup 2} at 10000 V/cm). The spectroscopic response of the detectors to monochromatic X-ray and gamma ray sources ({sup 109}Cd, {sup 241}Am and {sup 57}Co), at different temperatures and fluxes (up to 1 Mcps), was measured taking into account the mitigation of the effects of incomplete charge collection, pile-up and high flux radiation induced polarization phenomena. A custom-designed digital readout electronics, developed at DiFC of University of Palermo (Italy), able to perform a fine pulse shape and height analysis even at high fluxes, was used. At low rates (200 cps) and at room temperature (T=25 °C), the detectors exhibit an energy resolution FWHM around 4% at 59.5 keV, for comparison an energy resolution of 3% was measured with Al/CdTe/Pt detectors by using the same electronics (A250F/NF charge sensitive preamplifier, Amptek, USA; nominal ENC of 100 electrons RMS). At high rates (750 kcps), energy resolution values of 7% and 9% were measured, with throughputs of 2% and 60% respectively. No radiation polarization phenomena were

  11. Straining electrode behavior and corrosion resistance of nickel base alloys in high temperature acidic solution

    International Nuclear Information System (INIS)

    Yamanaka, Kazuo

    1992-01-01

    Repassivation behavior and IGA resistance of nickel base alloys containing 0∼30 wt% chromium was investigated in high temperature acid sulfate solution. (1) The repassivation rate was increased with increasing chromium content. And so the amounts of charge caused by the metal dissolution were decreased with increasing chromium content. (2) Mill-annealed Alloy 600 suffered IGA at low pH environment below about 3.5 at the fixed potentials above the corrosion potential in 10%Na 2 SO 4 +H 2 SO 4 solution at 598K. On the other hand, thermally-treated Alloy 690 was hard to occur IGA at low pH environments which mill-annealed Alloy 600 occurred IGA. (3) It was considered that the reason, why nickel base alloys containing high chromium content such as Alloy 690 (60%Ni-30%Cr-10%Fe) had high IGA/SCC resistance in high temperature acidic solution containing sulfate ion, is due to both the promotion of the repassivation and the suppression of the film dissolution by the formation of the dense chromium oxide film

  12. Status of the digital pixel array detector for protein crystallography

    CERN Document Server

    Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

    1999-01-01

    A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

  13. Mechanisms of High Temperature Resistance of Synechocystis sp. PCC 6803: An Impact of Histidine Kinase 34

    Directory of Open Access Journals (Sweden)

    Jan Červený

    2015-03-01

    Full Text Available Synechocystis sp. PCC 6803 is a widely used model cyanobacterium for studying responses and acclimation to different abiotic stresses. Changes in transcriptome, proteome, lipidome, and photosynthesis in response to short term heat stress are well studied in this organism, and histidine kinase 34 (Hik34 is shown to play an important role in mediating such response. Corresponding data on long term responses, however, are fragmentary and vary depending on parameters of experiments and methods of data collection, and thus are hard to compare. In order to elucidate how the early stress responses help cells to sustain long-term heat stress, as well as the role of Hik34 in prolonged acclimation, we examined the resistance to long-term heat stress of wild-type and ΔHik34 mutant of Synechocystis. In this work, we were able to precisely control the long term experimental conditions by cultivating Synechocystis in automated photobioreactors, measuring selected physiological parameters within a time range of minutes. In addition, morphological and ultrastructural changes in cells were analyzed and western blotting of individual proteins was used to study the heat stress-affected protein expression. We have shown that the majority of wild type cell population was able to recover after 24 h of cultivation at 44 °C. In contrast, while ΔHik34 mutant cells were resistant to heat stress within its first hours, they could not recover after 24 h long high temperature treatment. We demonstrated that the early induction of HspA expression and maintenance of high amount of other HSPs throughout the heat incubation is critical for successful adaptation to long-term stress. In addition, it appears that histidine kinase Hik34 is an essential component for the long term high temperature resistance.

  14. Mechanisms of High Temperature Resistance of Synechocystis sp. PCC 6803: An Impact of Histidine Kinase 34.

    Science.gov (United States)

    Červený, Jan; Sinetova, Maria A; Zavřel, Tomáš; Los, Dmitry A

    2015-03-02

    Synechocystis sp. PCC 6803 is a widely used model cyanobacterium for studying responses and acclimation to different abiotic stresses. Changes in transcriptome, proteome, lipidome, and photosynthesis in response to short term heat stress are well studied in this organism, and histidine kinase 34 (Hik34) is shown to play an important role in mediating such response. Corresponding data on long term responses, however, are fragmentary and vary depending on parameters of experiments and methods of data collection, and thus are hard to compare. In order to elucidate how the early stress responses help cells to sustain long-term heat stress, as well as the role of Hik34 in prolonged acclimation, we examined the resistance to long-term heat stress of wild-type and ΔHik34 mutant of Synechocystis. In this work, we were able to precisely control the long term experimental conditions by cultivating Synechocystis in automated photobioreactors, measuring selected physiological parameters within a time range of minutes. In addition, morphological and ultrastructural changes in cells were analyzed and western blotting of individual proteins was used to study the heat stress-affected protein expression. We have shown that the majority of wild type cell population was able to recover after 24 h of cultivation at 44 °C. In contrast, while ΔHik34 mutant cells were resistant to heat stress within its first hours, they could not recover after 24 h long high temperature treatment. We demonstrated that the early induction of HspA expression and maintenance of high amount of other HSPs throughout the heat incubation is critical for successful adaptation to long-term stress. In addition, it appears that histidine kinase Hik34 is an essential component for the long term high temperature resistance.

  15. A model for prediction of the transient rolling resistance of tyres based on inner-liner temperatures

    Science.gov (United States)

    Greiner, Matthias; Unrau, Hans-Joachim; Gauterin, Frank

    2018-01-01

    Measurements of rolling resistance in thermal equilibrium of a tyre, like measurements according to ISO 28580, do not allow statements about rolling resistances under other driving conditions. Such statements, however, are necessary to determine the energy consumption in driving cycles. Especially for the proper calculation of electric-vehicle remaining ranges and the selection of the respective driving strategies, the real amount of energy consumption is required. This paper presents a model approach, which by means of only one standardised rolling resistance measurement can be parameterised and, considering the present driving speed and tyre temperature, can predict the respective current rolling resistance.

  16. Anomalous low temperature resistivity in CeCr0.8V0.2Ge3

    Science.gov (United States)

    Singh, Durgesh; Patidar, Manju Mishra; Mishra, A. K.; Krishnan, M.; Ganesan, V.

    2018-04-01

    Resistivity (8T) and heat capacity (0T) of CeCr0.8V0.2Ge3 at low temperatures and high magnetic fields are reported. Resistivity curve shows a Kondo like behavior at an anomalously high temperature of 250K. A broad peak at 20K is observed in resistivity. A sharp change in resistivity around 7.3K is due to magnetic ordering mediated by coherence effects. Similar low temperature peak is also observed in heat capacity around 7.2K. A small magnetic field of the order of 1T shifts the peak towards lower temperatures confirming the antiferromagnetic ordering. A broad feature, which appears in resistivity at 20K, is absent in heat capacity. This feature shift towards higher temperatures with magnetic field, and may be due to the partial ferromagnetic ordering or due to geometrical frustration which opposes the magnetic ordering. The system shows a moderate heavy fermion behavior with Sommerfeld coefficient (γ) of 111mJ/mol-K2. Debye temperature of the compound is 250K. Shifting of TN in magnetic fields towards 0K indicates a possibility of quantum criticality in this system.

  17. Temperature and concentration dependences of the electrical resistivity for alloys of plutonium with americium under normal conditions

    Science.gov (United States)

    Tsiovkin, Yu. Yu.; Povzner, A. A.; Tsiovkina, L. Yu.; Dremov, V. V.; Kabirova, L. R.; Dyachenko, A. A.; Bystrushkin, V. B.; Ryabukhina, M. V.; Lukoyanov, A. V.; Shorikov, A. O.

    2010-01-01

    The temperature and concentration dependences of the electrical resistivity for alloys of americium with plutonium are analyzed in terms of the multiband conductivity model for binary disordered substitution-type alloys. For the case of high temperatures ( T > ΘD, ΘD is the Debye temperature), a system of self-consistent equations of the coherent potential approximation has been derived for the scattering of conduction electrons by impurities and phonons without any constraints on the interaction intensity. The definitions of the shift and broadening operator for a single-electron level are used to show qualitatively and quantitatively that the pattern of the temperature dependence of the electrical resistivity for alloys is determined by the balance between the coherent and incoherent contributions to the electron-phonon scattering and that the interference conduction electron scattering mechanism can be the main cause of the negative temperature coefficient of resistivity observed in some alloys involving actinides. It is shown that the great values of the observed resistivity may be attributable to interband transitions of charge carriers and renormalization of their effective mass through strong s-d band hybridization. The concentration and temperature dependences of the resistivity for alloys of plutonium and americium calculated in terms of the derived conductivity model are compared with the available experimental data.

  18. The corrosion resistance of Zr-Nb and Zr-Nb-Sn alloys in high-temperature water and steam

    Energy Technology Data Exchange (ETDEWEB)

    Dalgaard, S B

    1960-03-15

    An alloy of reactor-grade sponge zirconium-2.5 wt. % niobium was exposed to water and steam at high temperature. The corrosion was twice that of Zircaloy-2 while hydrogen pickup was found to be equal to that of Zircaloy-2. Ternary additions of tin to this alloy in the range 0.5-1.5 had no effect on the corrosion resistance in water at 315{sup o}C up to 100 days. At higher temperatures, tin increased the corrosion, the effect varying with temperature. Heat treatment of the alloys was shown to affect corrosion resistance. (author)

  19. The corrosion resistance of Zr-Nb and Zr-Nb-Sn alloys in high-temperature water and steam

    International Nuclear Information System (INIS)

    Dalgaard, S.B.

    1960-03-01

    An alloy of reactor-grade sponge zirconium-2.5 wt. % niobium was exposed to water and steam at high temperature. The corrosion was twice that of Zircaloy-2 while hydrogen pickup was found to be equal to that of Zircaloy-2. Ternary additions of tin to this alloy in the range 0.5-1.5 had no effect on the corrosion resistance in water at 315 o C up to 100 days. At higher temperatures, tin increased the corrosion, the effect varying with temperature. Heat treatment of the alloys was shown to affect corrosion resistance. (author)

  20. Influence of Compaction Temperature on Resistance Under Monotonic Loading of Crumb-Rubber Modified Hot-Mix Asphalts

    Directory of Open Access Journals (Sweden)

    Hugo A. Rondón-Quintana

    2012-12-01

    Full Text Available The influence of compaction temperature on resistance under mono-tonic loading (Marshall of Crumb-Rubber Modified (CRM Hot-Mix As-phalt (HMA was evaluated. The emphasis of this study was the applica-tion in Bogotá D.C. (Colombia. In this city the compaction temperature of HMA mixtures decreases, compared to the optimum, in about 30°C. Two asphalt cements (AC 60-70 and AC 80-100 were modified. Two particle sizes distribution curve were used. The compaction temperatures used were 120, 130, 140 and 150°C. The decrease of the compaction tempera-ture produces a small decrease in resistance under monotonic loading of the modified mixtures tested. Mixtures without CRM undergo a lineal decrease in its resistance of up to 34%.

  1. Influence of Compaction Temperature on Resistance Under Monotonic Loading of Crumb-Rubber Modified Hot-Mix Asphalts

    Directory of Open Access Journals (Sweden)

    Hugo A. Rondón-Quintana

    2012-12-01

    Full Text Available The influence of compaction temperature on resistance under monotonic loading (Marshall of Crumb-Rubber Modified (CRM Hot-Mix Asphalt (HMA was evaluated. The emphasis of this study was the application in Bogotá D.C. (Colombia. In this city the compaction temperature of HMA mixtures decreases, compared to the optimum, in about 30°C. Two asphalt cements (AC 60-70 and AC 80-100 were modified. Two particle sizes distribution curve were used. The compaction temperatures used were 120, 130, 140 and 150°C. The decrease of the compaction temperature produces a small decrease in resistance under monotonic loading of the modified mixtures tested. Mixtures without CRM undergo a lineal decrease in its resistance of up to 34%.

  2. Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-03-31

    Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

  3. The oxidation resistance and ignition temperature of AZ31 magnesium alloy with additions of La2O3 and La

    International Nuclear Information System (INIS)

    Zhao, Shizhe; Zhou, Hong; Zhou, Ti; Zhang, Zhihui; Lin, Pengyu; Ren, Luquan

    2013-01-01

    Highlights: ► Using lanthanum and lanthanum oxide (La 2 O 3 ) can improve oxidation resistance of magnesium alloy. ► La 2 O 3 is as effective as La in affecting both alloy microstructure and oxidation resistance. ► The optimum La concentration in alloy is ∼0.7 wt.%. ► We analyzed the oxidation kinetics of AZ31 alloy with both additions. - Abstract: We investigate the oxidation resistance of AZ31 magnesium alloy with additions of La and La oxide (La 2 O 3 ). The contributor is the practical La content in alloy. Both La and La 2 O 3 are effective in improving the oxidation resistance of Mg alloys. The samples with La content of ∼ 0.7 wt.% possess the best resistance to oxidation of all. Oxide scale, ignition temperature and oxidation kinetics are analyzed. However, higher La content is detrimental to the oxidation resistance.

  4. Influence of austenitisation temperature on the structure and properties of weather resistant steels

    International Nuclear Information System (INIS)

    Prasad, S.N.; Mediratta, S.R.; Sarma, D.S.

    2003-01-01

    The influence of austenitisation temperature on the structure and properties of three experimental weather resistant steels has been studied. All these steels contain 1% Mn, 0.3% Ni, 0.47% Cr and 0.47% Cu. In addition, steel no. 1 has 0.1% C, 0.1% P, steel no. 2 has 0.1% C, 0.05% P and 0.024% Nb while steel 3 has 0.2% C, 0.054% Nb and 0.046% V. It has been found that the hardness, yield strength and tensile strength do not change significantly with austenitisation temperature over the range 900-1200 deg. C for steel no. 1 but they increase considerably when austenitised above 1000 deg. C for steels 2 and 3. Similarly, the ductility decreases with increasing temperature of austenitisation. All the steels austenitised up to 1000 deg. C exhibit sharp yield points. None of these steels shows sharp yield point after 1200 deg. C. At 1100 deg. C, however, sharp yield points were observed in steels 1 and 2. There has been a noticeable change in optical microstructure. In steels 2 and 3 the pearlite is gradually replaced by granular bainite when austenitised above 1000 deg. C. The transmission electron microscopy study reveals that the granular bainite consists of acicular ferrite and martensite/austenite constituent

  5. Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

    Science.gov (United States)

    Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

    2013-09-01

    We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

  6. Effect of the deposition temperature on corrosion resistance and biocompatibility of the hydroxyapatite coatings

    Science.gov (United States)

    Vladescu, A.; Braic, M.; Azem, F. Ak; Titorencu, I.; Braic, V.; Pruna, V.; Kiss, A.; Parau, A. C.; Birlik, I.

    2015-11-01

    Hydroxyapatite (HAP) ceramics belong to a class of calcium phosphate-based materials, which have been widely used as coatings on titanium medical implants in order to improve bone fixation and thus to increase the lifetime of the implant. In this study, HAP coatings were deposited from pure HAP targets on Ti6Al4V substrates using the radio-frequency magnetron sputtering technique at substrate temperatures ranging from 400 to 800 °C. The surface morphology and the crystallographic structure of the films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The corrosion resistance of the coatings in saliva solution at 37 °C was evaluated by potentiodynamic polarization. Additionally, the human osteosarcoma cell line (MG-63) was used to test the biocompatibility of the coatings. The results showed that all of the coatings grown uniformly and that the increasing substrate temperature induced an increase in their crystallinity. Corrosion performance of the coatings was improved with the increase of the substrate temperature from 400 °C to 800 °C. Furthermore, all the coatings support the attachment and growth of the osteosarcoma cells with regard to the in vitro test findings.

  7. Effect of Low Temperature on a 4 W/60 K Pulse-Tube Cryocooler for Cooling HgCdTe Detector

    Science.gov (United States)

    Zhang, Ankuo; Liu, Shaoshuai; Wu, Yinong

    2018-04-01

    Temperature is an extremely important parameter for the material of the space-borne infrared detector. To cool an HgCdTe-infrared detector, a Stirling-type pulse-tube cryocooler (PTC) has been developed based on a great deal of numerical simulations, which are performed to investigate the thermodynamic behaviors of the PTC. The effects of different low temperatures are presented to analyze different energy flows, losses, phase shifts, and impedance matching of the PTC at a temperature range of 40-120 K, where woven wire screens are used. Finally, a high-efficiency coaxial PTC has been designed, built, and tested, operating around 60 K after a number of theoretical and experimental studies. The PTC can offer a no-load refrigeration temperature of 40 K with an input electric power of 150 W, and a cooling power of 4 W at 60 K is obtained with Carnot efficiency of 12%. In addition, a comparative study of simulation and experiment has been carried out, and some studies on reject temperatures have been presented for a thorough understanding of the PTC system.

  8. RNA-Seq analysis reveals insight into enhanced rice Xa7-mediated bacterial blight resistance at high temperature.

    Directory of Open Access Journals (Sweden)

    Stephen P Cohen

    Full Text Available Plant disease is a major challenge to agriculture worldwide, and it is exacerbated by abiotic environmental factors. During some plant-pathogen interactions, heat stress allows pathogens to overcome host resistance, a phenomenon which could severely impact crop productivity considering the global warming trends associated with climate change. Despite the importance of this phenomenon, little is known about the underlying molecular mechanisms. To better understand host plant responses during simultaneous heat and pathogen stress, we conducted a transcriptomics experiment for rice plants (cultivar IRBB61 containing Xa7, a bacterial blight disease resistance (R gene, that were infected with Xanthomonas oryzae, the bacterial blight pathogen of rice, during high temperature stress. Xa7-mediated resistance is unusual relative to resistance mediated by other R genes in that it functions better at high temperatures. Using RNA-Seq technology, we identified 8,499 differentially expressed genes as temperature responsive in rice cultivar IRBB61 experiencing susceptible and resistant interactions across three time points. Notably, genes in the plant hormone abscisic acid biosynthesis and response pathways were up-regulated by high temperature in both mock-treated plants and plants experiencing a susceptible interaction and were suppressed by high temperature in plants exhibiting Xa7-mediated resistance. Genes responsive to salicylic acid, an important plant hormone for disease resistance, were down-regulated by high temperature during both the susceptible and resistant interactions, suggesting that enhanced Xa7-mediated resistance at high temperature is not dependent on salicylic acid signaling. A DNA sequence motif similar to known abscisic acid-responsive cis-regulatory elements was identified in the promoter region upstream of genes up-regulated in susceptible but down-regulated in resistant interactions. The results of our study suggest that the plant

  9. Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance

    International Nuclear Information System (INIS)

    Wang, X.Y.; Zhang, Z.S.; Bai, T.

    2010-01-01

    The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al) were introduced to the Cr-Si target to improve the performance of the target prepared. The measures for grain refining in smelting Cr-Si-Ta-Al target were taken to improve the performance of the prepared target. The mechanism and role of grain refinement were discussed in the paper. The phase structure of the prepared target was detected by X-ray diffraction (XRD). Rate of temperature drop was studied to reduce the internal stress of alloy target and conquer the easy cracking disadvantage of silicon-rich target. The electrical properties of sputtered thin film resistors were tested to evaluate the performance of the prepared target indirectly.

  10. Alkali-resistant low-temperature atomic-layer-deposited oxides for optical fiber sensor overlays

    Science.gov (United States)

    Kosiel, K.; Dominik, M.; Ściślewska, I.; Kalisz, M.; Guziewicz, M.; Gołaszewska, K.; Niedziółka-Jonsson, J.; Bock, W. J.; Śmietana, M.

    2018-04-01

    This paper presents an investigation of properties of selected metallic oxides deposited at a low temperature (100 °C) by atomic layer deposition (ALD) technique, relating to their applicability as thin overlays for optical fiber sensors resistant in alkaline environments. Hafnium oxide (Hf x O y with y/x approx. 2.70), tantalum oxide (Ta x O y with y/x approx. 2.75) and zirconium oxide (Zr x O y with y/x approx. 2.07), which deposition was based, respectively, on tetrakis(ethylmethyl)hafnium, tantalum pentachloride and tetrakis(ethylmethyl)zirconium with deionized water, were tested as thin layers on planar Si (100) and glass substrates. Growth per cycle (GPC) in the ALD processes was 0.133-0.150 nm/cycle. Run-to-run GPC reproducibility of the ALD processes was best for Hf x O y (0.145 ± 0.001 nm/cycle) and the poorest for Ta x O y (0.133 ± 0.003 nm/cycle). Refractive indices n of the layers were 2.00-2.10 (at the wavelength λ = 632 nm), with negligible k value (at λ for 240-930 nm). The oxides examined by x-ray diffractometry proved to be amorphous, with only small addition of crystalline phases for the Zr x O y . The surfaces of the oxides had grainy but smooth topographies with root-mean square roughness ˜0.5 nm (at 10 × 10 μm2 area) according to atomic force microscopy. Ellipsometric measurements, by contrast, suggest rougher surfaces for the Zr x O y layers. The surfaces were also slightly rougher on the glass-based samples than on the Si-based ones. Nanohardness and Young modules were 4.90-8.64 GPa and 83.7-104.4 GPa, respectively. The tests of scratch resistance revealed better tribological properties for the Hf x O y and the Ta x O y than for the Zr x O y . The surfaces were hydrophilic, with wetting angles of 52.5°-62.9°. The planar oxides on Si, being resistive even to concentrated alkali (pH 14), proved to be significantly more alkali-resistive than Al2O3. The Ta x O y overlay was deposited on long-period grating sensor induced in optical

  11. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  12. Radiation detectors

    International Nuclear Information System (INIS)

    2013-01-01

    This sixth chapter presents the operational principles of the radiation detectors; detection using photographic emulsions; thermoluminescent detectors; gas detectors; scintillation detectors; liquid scintillation detectors; detectors using semiconductor materials; calibration of detectors; Bragg-Gray theory; measurement chain and uncertainties associated to measurements

  13. Peltier battery thermostat for semiconductor detectors

    International Nuclear Information System (INIS)

    Caini, V.

    1980-01-01

    The description is given of a Peltier battery cooling thermostat for semiconductor detectors, whose sensing element is the detector itself. A signal proportional to the leakage current is amplified and compared with a chosen reference voltage. The difference, amplified and sensed, regulates the cooling current to the Peltier battery. Special mechanical devices speed up measurement-taking. The leakage current proved to be reducible to as little as 1/1000 of that at ambient temperature and the stabilization obtained is between +-5 nA (although between +-1 nA is also feasible). Hence it is possible to use very high load resistance preamplifiers to reduce noise and to improve stability and pulse height resolution in α spectroscopy, even with a detector unsuitable for work at very low temperatures. Other applications can be foreseen. (orig.)

  14. A study on the improvement of oxidation resistance of OAE-added stainless steels for high temperature applications

    International Nuclear Information System (INIS)

    Kim, Dae Hwan; Kim, Gil Moo

    1996-01-01

    Since the manufacturing temperature of stainless steels is relatively high, oxidation at the elevated temperature becomes important. The chemical and physical properties of the protective oxide film which was formed on the stainless steels at high temperature for the oxidation resistance are important in determining the rate of oxidation and the life of equipment exposed to high temperature oxidizing environments. In this study, the oxidation behavior of STS 309S and STS 409L added by a small amount of oxygen active element(each + 0.5wt% Hf and Y) was studied to improve oxidation resistance. In the cyclic oxidation, while OAE-free specimens showed relatively poor oxidation resistance due to spallations and cracks of Cr-rich oxide layer, OAE-added specimens improved cyclic oxidation resistance assumably due to constant oxidation rate with stable oxide layers at high temperature. Especially Hf improved cyclic oxidation resistance by forming Cr-rich oxide layer preventing internal oxidation in STS 309S. (author)

  15. Calorimetric low - temperature detectors for high resolution X-ray spectroscopy on stored highly stripped heavy ions

    International Nuclear Information System (INIS)

    Bleile, A.; Egelhof, P.; Kraft, S.; Meier, H.J.; Shrivastava, A.; Weber, M.; McCammon, D.; Stahle, C.K.

    2001-09-01

    The accurate determination of the Lamb shift in heavy hydrogen-like ions provides a sensitive test of quantum electrodynamics in very strong Coulomb fields, not accessible otherwise. For the investigation of the Lyman-α transitions in 208 Pb 81+ or 238 U 91+ with sufficient accuracy, a high resolution calorimetric detector for hard X-rays (E ≤ 100 keV) is presently being developed. The detector modules consist of arrays of silicon thermistors and of X-ray absorbers made of high-Z material to optimize the absorption efficiency. The detectors are housed in a specially designed 3 He/ 4 He dilution refrigerator with a side arm which fits to the internal target geometry of the storage ring ESR at GSI Darmstadt. The detector performance presently achieved is already close to fulfill the demands of the Lamb shift experiment. For a prototype detector pixel with a 0.2 mm 2 x 47 μm Pb absorber an energy resolution of ΔE FWHM = 65 eV is obtained for 60 keV X-rays. (orig.)

  16. Crack resistance behaviour of an intermetallic Ti-Al-Si-Nb alloy at room temperature

    International Nuclear Information System (INIS)

    Wittkowsky, B.U.; Pfuff, M.J.

    1996-01-01

    The room temperature crack growth behaviour of a Ti-Al-Si-Nb alloy consisting of the two intermetallic phases (Ti, Nb) 3 (Al, Si) and (Ti, Nb) 5 (Si, Al) 3 is investigated in the present paper. The material exhibits a heterogeneous disordered microstructure and fails in a brittle manner. Crack growth is associated with a pronounced crack resistance behaviour. For a sample of nominally identical specimens the R-curves scatter around a mean curve with a standard deviation which remains roughly constant as the crack grows. A natural extension of the bundle model introduced in a previous paper is used to simulate R-curves and their scatter is in reasonably good agreement with the experimental findings. (orig.)

  17. Molecular detection of Staphylococcus aureus resistant to temperature in milk and its products

    Science.gov (United States)

    Sutejo, Stephani Valentina Harda; Amarantini, Charis; Budiarso, Tri Yahya

    2017-11-01

    Contamination of Staphylococcus aureus on milk can cause intoxication and infection by Staphylococcal enterotoxin. It has nuc gene, coding thermonuclease enzyme (TNase) that is responsible for nature of resistance in the heating process. This study was conducted to identify nuc gene of as S. aureus isolated from milk and its products like ultra-high temperature, sterile milk, sweetened condensed milk, formula milk, café/milk street traders and fresh milk. Biochemical identification was conducted by using carbohydrate fermentation tests and confirmed by API Staph. Molecular confirmation by amplification of nuc gene using PCR. Based on the results of confirmation using API Staph, all isolates were confirmed as S. aureus with index determinant percentage of 97%. An amplicon product of 270 bp was gained in all isolates. It is concluded that isolate of S. aureus has nuc gene.

  18. Design and simulation of resistive SOI CMOS micro-heaters for high temperature gas sensors

    International Nuclear Information System (INIS)

    Iwaki, T; Covington, J A; Udrea, F; Ali, S Z; Guha, P K; Gardner, J W

    2005-01-01

    This paper describes the design of doped single crystal silicon (SCS) microhotplates for gas sensors. Resistive heaters are formed by an n+/p+ implantation into a Silicon-On-Insulator (SOI) wafer with a post-CMOS deep reactive ion etch to remove the silicon substrate. Hence they are fully compatible with CMOS technologies and allows for the integration of associated drive/detection circuitry. 2D electro-thermal models have been constructed and the results of numerical simulations using FEMLAB[reg] are given. Simulations show these micro-hotplates can operate at temperatures of 500 deg. C with a drive voltage of only 5 V and a power consumption of less than 100 mW

  19. Very High-Temperature Reactor (VHTR) Proliferation Resistance and Physical Protection (PR and PP)

    International Nuclear Information System (INIS)

    Moses, David Lewis

    2011-01-01

    This report documents the detailed background information that has been compiled to support the preparation of a much shorter white paper on the design features and fuel cycles of Very High-Temperature Reactors (VHTRs), including the proposed Next-Generation Nuclear Plant (NGNP), to identify the important proliferation resistance and physical protection (PR and PP) aspects of the proposed concepts. The shorter white paper derived from the information in this report was prepared for the Department of Energy Office of Nuclear Science and Technology for the Generation IV International Forum (GIF) VHTR Systems Steering Committee (SSC) as input to the GIF Proliferation Resistance and Physical Protection Working Group (PR and PPWG) (http://www.gen-4.org/Technology/horizontal/proliferation.htm). The short white paper was edited by the GIF VHTR SCC to address their concerns and thus may differ from the information presented in this supporting report. The GIF PR and PPWG will use the derived white paper based on this report along with other white papers on the six alternative Generation IV design concepts (http://www.gen-4.org/Technology/systems/index.htm) to employ an evaluation methodology that can be applied and will evolve from the earliest stages of design. This methodology will guide system designers, program policy makers, and external stakeholders in evaluating the response of each system, to determine each system's resistance to proliferation threats and robustness against sabotage and terrorism threats, and thereby guide future international cooperation on ensuring safeguards in the deployment of the Generation IV systems. The format and content of this report is that specified in a template prepared by the GIF PR and PPWG. Other than the level of detail, the key exception to the specified template format is the addition of Appendix C to document the history and status of coated-particle fuel reprocessing technologies, which fuel reprocessing technologies have yet

  20. Evaluation of High Temperature Particle Erosion Resistance of Vanadium-Boride Coating

    International Nuclear Information System (INIS)

    Lee, E. Y.; Kim, J. H.; Jeong, S. I.; Lee, S. H.; Eum, G. W.

    2015-01-01

    The components in ultra super critical (USC) steam turbine, which is under development for high efficient power generation, are encountering harsher solid particle erosion by iron oxide scales than ones in the existing steam turbines. Therefore, the currently used boride coating will not be able to hold effective protection from particle erosion in USC system and should be replaced by new particle erosion resistant coatings. One of the best protective coatings developed for USC steam turbine parts was found to be vanadium-boride (V-boride) coating which has a hardness of about 3000 HV, much higher than that of boride, 1600∼2000 HV. In order to evaluate particle erosion resistance of the various coatings such as V-boride, boride and Cr-carbide coatings at high temperature, particle erosion test equipment were designed and manufactured. In addition, erosion particle velocity was simulated using FLUENT software based on semi-implicity method for pressure linked equations revised (SIMPLER). Based on experimental results of this work, the vanadium-boride coating was found to be superior to others and to be a candidate coating to replace the boride coating

  1. Evaluation of High Temperature Particle Erosion Resistance of Vanadium-Boride Coating

    Energy Technology Data Exchange (ETDEWEB)

    Lee, E. Y.; Kim, J. H.; Jeong, S. I. [Andong National University, Andong (Korea, Republic of); Lee, S. H.; Eum, G. W. [Corporate R and D Institute Doosan Heavy Industries and Construction Co., Changwon (Korea, Republic of)

    2015-04-15

    The components in ultra super critical (USC) steam turbine, which is under development for high efficient power generation, are encountering harsher solid particle erosion by iron oxide scales than ones in the existing steam turbines. Therefore, the currently used boride coating will not be able to hold effective protection from particle erosion in USC system and should be replaced by new particle erosion resistant coatings. One of the best protective coatings developed for USC steam turbine parts was found to be vanadium-boride (V-boride) coating which has a hardness of about 3000 HV, much higher than that of boride, 1600∼2000 HV. In order to evaluate particle erosion resistance of the various coatings such as V-boride, boride and Cr-carbide coatings at high temperature, particle erosion test equipment were designed and manufactured. In addition, erosion particle velocity was simulated using FLUENT software based on semi-implicity method for pressure linked equations revised (SIMPLER). Based on experimental results of this work, the vanadium-boride coating was found to be superior to others and to be a candidate coating to replace the boride coating.

  2. Thermal conductivity and Kapitza resistance of epoxy resin fiberglass tape at superfluid helium temperature

    Science.gov (United States)

    Baudouy, B.; Polinski, J.

    2009-03-01

    The system of materials composed of fiberglass epoxy resin impregnated tape constitutes in many cases the electrical insulation for "dry"-type superconducting accelerator magnet such as Nb 3Sn magnets. Nb 3Sn magnet technology is still under development in a few programs to reach higher magnetic fields than what NbTi magnets can produce. The European program, Next European Dipole (NED), is one of such programs and it aims to develop and construct a 15 T class Nb 3Sn magnet mainly for upgrading the Large Hardron Collider. Superfluid helium is considered as one possible coolant and since the magnet has been designed with a "dry" insulation, the thermal conductivity and the Kapitza resistance of the electrical insulation are the key properties that must be know for the thermal design of such a magnet. Accordingly, property measurements of the epoxy resin fiberglass tape insulation system developed for the NED project was carried out in superfluid helium. Four sheets with thicknesses varying from 40 to 300 μm have been tested in a steady-state condition. The determined thermal conductivity, k, is [(25.8 ± 2.8) · T - (12.2 ± 4.9)] × 10 -3 W m -1 K -1 and the Kapitza resistance is given by R K = (1462 ± 345) · T(-1.86 ± 0.41) × 10 -6 Km 2 W -1 in the temperature range of 1.55-2.05 K.

  3. Acute Exercise-Associated Skin Surface Temperature Changes after Resistance Training with Different Exercise Intensities

    Directory of Open Access Journals (Sweden)

    Martin Weigert

    2018-01-01

    Full Text Available Background: Studies showed, that changes in muscular metabolic-associated heat production and blood circulation during and after muscular work affect skin temperature (T but the results are inconsistent and the effect of exercise intensity is unclear. Objective: This study investigated the intensity-dependent reaction of T on resistance training. Methods: Ten male students participated. After acclimatization (15 min, the participants completed 3x10 repetitions of unilateral biceps curl with 30, 50 or 70% of their one-repetition-maximum (1RM in a randomized order. Skin temperature of the loaded and unloaded biceps was measured at rest (Trest, immediately following set 1, 2 and 3 (TS1,TS2,TS3 and 30 minutes post exercise (T1 - T30 with an infrared camera. Results: Two-way ANOVA detected a significant effect of the measuring time point on T (Trest to T30 of the loaded arm for 30% (Eta²=0.85, 50% (Eta²=0.88 and 70% 1RM (Eta²=0.85 and of the unloaded arm only for 30% 1RM (Eta²=0.41 (p0.05. The T values at the different measuring time points (Trest - T30 did not differ between the intensities at any time point. The loaded arm showed a mean maximum T rise to Trest of 1.8°C and on average, maximum T was reached approximately 5 minutes after the third set.  Conclusion: This study indicate a rise of T, which could be independent of the exercise intensity. Infrared thermography seems to be applicable to identify the primary used functional muscles in resistance training but this method seems not suitable to differentiate between exercise intensity from 30 to 70% 1RM.

  4. Effect of various sintering temperature on resistivity behaviour and magnetoresistance of La{sub 0.67}Ba{sub 0.33}MnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Pratama, R.; Kurniawan, B., E-mail: bkuru07@gmail.com; Manaf, A.; Ramadhan, M. R. [Department of Physics, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Nanto, D. [Department of Physics Education, Syarif Hidayatullah State Islamic University, Jakarta 15412 (Indonesia); Saptari, S. A. [Faculty of Science and Technology, Syarif Hidayatullah State Islamic University, Jakarta 15412 (Indonesia); Imaduddin, A. [Research Center of Metallurgy and Material, Indonesian Institute of Science,s Gd 470 Kawasan Puspitek, Serpong, Tangerang Selatan 15314 (Indonesia)

    2016-04-19

    A detail work was conducted in order to investigate effect of various sintering temperature on resistivity behavior and its relation with the magneto-resistance effect of La{sub 0.67}Ba{sub 0.33}MnO{sub 3} (LBMO). The LBMO samples were synthesized using solid state reaction. Characterization using X-ray diffraction shows that all LBMO samples have a single phase for each variation. Variation of sintering temperature on the LBMO samples affects its lattice parameters. The resistivity measurement in an absence and under applied magnetic field resulted in a highly significant different values. In one of the sintering temperature variation of LBMO, an increasing resistivity had shown at a low temperature and had reached its maximum value at a specific temperature, and then the resistivity decreases to the lowest value near the room temperature. Similar result observed at higher varieties of sintering temperature but with significant lower maximum resistivity.

  5. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

    Energy Technology Data Exchange (ETDEWEB)

    Fekecs, André [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Chicoine, Martin [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Ilahi, Bouraoui [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); SpringThorpe, Anthony J. [Canadian Photonics Fabrication Centre, National Research Council, Ottawa, ON K1A 0R6 (Canada); Schiettekatte, François [Département de Physique, Université de Montréal, Montréal, QC H3C 3J7 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); Morris, Denis [Institut Interdisciplinaire d’Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, QC J1K 0A5 (Canada); Regroupement Québécois sur les Matériaux de Pointe, QC (Canada); and others

    2015-09-15

    Highlights: • InGaAsP/InP alloys were processed by MeV ion implantation and rapid thermal annealing. • X-ray diffraction and Hall measurement results are compared for several process conditions. • Amorphous layers formed at low implantation temperature. • Dynamic annealing prevented amorphization at implantation above room temperature. • After annealing near 500 °C, sheet resistivities of 10{sup 7} Ω/sq were obtained with low temperature Fe implantation. - Abstract: We report on critical ion implantation and rapid thermal annealing (RTA) process temperatures that produce resistive Fe- or Ga-implanted InGaAsP/InP heterostructures. Two InGaAsP/InP heterostructure compositions, with band gap wavelengths of 1.3 μm and 1.57 μm, were processed by ion implantation sequences done at multiple MeV energies and high fluence (10{sup 15} cm{sup −2}). The optimization of the fabrication process was closely related to the implantation temperature which influences the type of implant-induced defect structures. With hot implantation temperatures, at 373 K and 473 K, X-ray diffraction (XRD) revealed that dynamic defect annealing was strong and prevented the amorphization of the InGaAsP layers. These hot-implanted layers were less resistive and RTA could not optimize them systematically in favor of high resistivity. With cold implantation temperatures, at 83 K and even at 300 K, dynamic annealing was minimized. Damage clusters could form and accumulate to produce resistive amorphous-like structures. After recrystallization by RTA, polycrystalline signatures were found on every low-temperature Fe- and Ga-implanted structures. For both ion species, electrical parameters evolved similarly against annealing temperatures, and resistive structures were produced near 500 °C. However, better isolation was obtained with Fe implantation. Differences in sheet resistivities between the two alloy compositions were less than band gap-related effects. These observations, related

  6. A new contact electric resistance technique for in-situ measurement of the electric resistance of surface films on metals in electrolytes at high temperatures and pressures

    International Nuclear Information System (INIS)

    Saario, T.; Marichev, V.A.

    1993-01-01

    Surface films play a major role in corrosion assisted cracking. A new Contact Electric Resistance (CER) method has been recently developed for in situ measurement of the electric resistance of surface films. The method has been upgraded for high temperature high pressure application. The technique can be used for any electrically conductive material in any environment including liquid, gas or vacuum. The technique has been used to determine in situ the electric resistance of films on metals during adsorption of water and anions, formation and destruction of oxides and hydrides, electroplating of metals and to study the electric resistance of films on semiconductors. The resolution of the CER technique is 10 -9 Ω, which corresponds to about 0.03 monolayers of deposited copper during electrochemical deposition Cu/Cu 2+ . Electric resistance data can be measured with a frequency of the order of one hertz, which enables one to follow in situ the kinetics of surface film related processes. The kinetics of these processes and their dependence on the environment, temperature, pH and electrochemical potential can be investigated

  7. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    Science.gov (United States)

    Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

    2010-06-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  8. Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

    International Nuclear Information System (INIS)

    Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

    2010-01-01

    Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

  9. Designing Nanoscale Precipitates in Novel Cobalt-based Superalloys to Improve Creep Resistance and Operating Temperature

    Energy Technology Data Exchange (ETDEWEB)

    Dunand, David C. [Northwestern Univ., Evanston, IL (United States); Seidman, David N. [Northwestern Univ., Evanston, IL (United States); Wolverton, Christopher [Northwestern Univ., Evanston, IL (United States); Saal, James E. [Northwestern Univ., Evanston, IL (United States); Bocchini, Peter J. [Northwestern Univ., Evanston, IL (United States); Sauza, Daniel J. [Northwestern Univ., Evanston, IL (United States)

    2014-10-01

    High-temperature structural alloys for aerospace and energy applications have long been dominated by Ni-base superalloys, whose strength and creep resistance can be attributed to microstructures consisting of a large volume fraction of ordered (L12) γ'-precipitates embedded in a disordered’(f.c.c.) γ-matrix. These alloys exhibit excellent mechanical behavior and thermal stability, but after decades of incremental improvement are nearing the theoretical limit of their operating temperatures. Conventional Co-base superalloys are solid-solution or carbide strengthened; although they see industrial use, these alloys are restricted to lower-stress applications because the absence of an ordered intermetallic phase places an upper limit on their mechanical performance. In 2006, a γ+γ' microstructure with ordered precipitates analogous to (L12) Ni3Al was first identified in the Co-Al-W ternary system, allowing, for the first time, the development of Co-base alloys with the potential to meet or even exceed the elevated-temperature performance of their Ni-base counterparts. The potential design space for these alloys is complex: the most advanced Ni-base superalloys may contain as many as 8-10 minor alloying additions, each with a specified purpose such as raising the γ' solvus temperature or improving creep strength. Our work has focused on assessing the effects of alloying additions on microstructure and mechanical behavior of γ'-strengthened Co-base alloys in an effort to lay the foundations for understanding this emerging alloy system. Investigation of the size, morphology, and composition of γ' and other relevant phases is investigated utilizing scanning electron microscopy (SEM) and 3-D picosecond ultraviolet local electrode atom probe tomography (APT). Microhardness, compressive yield stress at ambient and elevated temperatures, and compressive high-temperature creep measurements are employed to

  10. Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNx Films at Low Substrate Temperatures

    Science.gov (United States)

    Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

    2004-12-01

    Highly moisture-resistive SiNx films on a Si substrate are obtained at substrate temperatures of 80°C by catalytic chemical vapor deposition (Cat-CVD) using a source gas with H2. Atomic hydrogen effected the selective etching of a weak-bond regions and an increase in atomic density induced by the energy of the surface reaction. It is concluded that Cat-CVD using H2 is a promising candidate for the fabrication of highly moisture-resistive SiNx films at low temperatures.

  11. Study of resistance to deformation dependence on temperature and strain degree during working with different rates for ABM-1 alloy

    International Nuclear Information System (INIS)

    Kharlamov, V.V.; Dvinskij, V.M.; Vashlyaev, Eh.V.; Dyblenko, Z.A.; Khamatov, R.I.; Zverev, K.P.

    1981-01-01

    On the basis of approximation of the experimental curves partial differential equations relating ABM-1 alloy deformation resistance to the deformation parameters are obtained. Using statistical processing of the experimental data the regression equations of the dependence of the deformation resistance on temperature rate and relative reduction of the samples are found. In the 2.1-23.6 1/c deformation rate range hardening and weakening rates of the AMB-1 alloy increases with the increase of the latter. The data obtained permit to calculate the deformation parameters of the studied alloy for different processes of metal plastic working in the studied temperature range [ru

  12. Temperature-induced plasticity in egg size and resistance of eggs to temperature stress in a soil arthropod.

    NARCIS (Netherlands)

    Liefting, M.; Weerenbeck, M.; van Dooremalen, J.A.; Ellers, J.

    2010-01-01

    Temperature is considered one of the most important mediators of phenotypic plasticity in ectotherms, resulting in predictable changes in egg size. However, the fitness consequences of temperature-induced plasticity in egg size are not well understood and are often assessed at mild temperatures,

  13. SiC-based neutron detector in quasi-realistic working conditions: efficiency and stability at room and high temperature under fast neutron irradiations

    Energy Technology Data Exchange (ETDEWEB)

    Ferone, Raffaello; Issa, Fatima; Ottaviani, Laurent; Biondo, Stephane; Vervisch, Vanessa [IM2NP, UMR CNRS 7334, Aix-Marseille University, Case 231,13397 Marseille Cedex 20, (France); Szalkai, Dora; Klix, Axel [KIT- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology Karlsruhe 76344, (Germany); Vermeeren, Ludo [SCK-CEN, Boeretang 200, B-2400 Mol, (Belgium); Saenger, Richard [Schlumberger, Clamart, (France); Lyoussi, Abadallah [CEA, DEN, Departement d' Etudes des Reacteurs, Service de Physique Experimentale, Laboratoire Dosimetrie Capteurs Instrumentation, 13108 Saint-Paul-lez-Durance, (France)

    2015-07-01

    In the framework of the European I SMART project, we have designed and made new SiC-based nuclear radiation detectors able to operate in harsh environments and to detect both fast and thermal neutrons. In this paper, we report experimental results of fast neutron irradiation campaign at high temperature (106 deg. C) in quasi-realistic working conditions. Our device does not suffer from high temperature, and spectra do show strong stability, preserving features. These experiments, as well as others in progress, show the I SMART SiC-based device skills to operate in harsh environments, whereas other materials would strongly suffer from degradation. Work is still demanded to test our device at higher temperatures and to enhance efficiency in order to make our device fully exploitable from an industrial point of view. (authors)

  14. 22. lecture meeting of the association for heat-resistant steels and the association for high temperature materials 'long-term performance of heat-resistant steels and high-temperature materials'. Proceedings

    International Nuclear Information System (INIS)

    1999-01-01

    The proceedings volume contains 14 full papers discussing the long-term performance of high-temperature resistant materials (creep, creep fatigue, crack growth). 13 papers have been analysed and processed for separate retrieval from the ENERGY database. (orig./CB) [de

  15. Patients presenting with miliaria while wearing flame resistant clothing in high ambient temperatures: a case series

    Directory of Open Access Journals (Sweden)

    Garcia Anisa M

    2011-09-01

    Full Text Available Abstract Introduction Clothing can be a cause of occupational dermatitis. Frequent causes of clothing-related dermatological problems can be the fabric itself and/or chemical additives used in the laundering process, friction from certain fabrics excessively rubbing the skin, or heat retention from perspiration-soaked clothing in hot working environments. To the best of our knowledge, these are the first reported cases of miliaria rubra associated with prolonged use of flame resistant clothing in the medical literature. Case presentation We report 18 cases (14 men and 4 women, with an age range of 19 to 37 years of moderate to severe skin irritation associated with wearing flame resistant clothing in hot arid environments (temperature range: 39 to 50°C, 5% to 25% relative humidity. We describe the medical history in detail of a 23-year-old Caucasian woman and a 31-year-old African-American man. A summary of the other 16 patients is also provided. Conclusions These cases illustrate the potential serious nature of miliaria with superimposed Staphylococcus infections. All 18 patients fully recovered with topical skin treatment and modifications to their dress ensemble. Clothing, in particular blend fabrics, must be thoroughly laundered to adequately remove detergent residue. While in hot environments, individuals with sensitive skin should take the necessary precautions such as regular changing of clothing and good personal hygiene to ensure that their skin remains as dry and clean as possible. It is also important that they report to their health care provider as soon as skin irritation or rash appears to initiate any necessary medical procedures. Miliaria rubra can take a week or longer to clear, so removal of exposure to certain fabric types may be necessary.

  16. Very High-Temperature Reactor (VHTR) Proliferation Resistance and Physical Protection (PR&PP)

    Energy Technology Data Exchange (ETDEWEB)

    Moses, David Lewis [ORNL

    2011-10-01

    This report documents the detailed background information that has been compiled to support the preparation of a much shorter white paper on the design features and fuel cycles of Very High-Temperature Reactors (VHTRs), including the proposed Next-Generation Nuclear Plant (NGNP), to identify the important proliferation resistance and physical protection (PR&PP) aspects of the proposed concepts. The shorter white paper derived from the information in this report was prepared for the Department of Energy Office of Nuclear Science and Technology for the Generation IV International Forum (GIF) VHTR Systems Steering Committee (SSC) as input to the GIF Proliferation Resistance and Physical Protection Working Group (PR&PPWG) (http://www.gen-4.org/Technology/horizontal/proliferation.htm). The short white paper was edited by the GIF VHTR SCC to address their concerns and thus may differ from the information presented in this supporting report. The GIF PR&PPWG will use the derived white paper based on this report along with other white papers on the six alternative Generation IV design concepts (http://www.gen-4.org/Technology/systems/index.htm) to employ an evaluation methodology that can be applied and will evolve from the earliest stages of design. This methodology will guide system designers, program policy makers, and external stakeholders in evaluating the response of each system, to determine each system's resistance to proliferation threats and robustness against sabotage and terrorism threats, and thereby guide future international cooperation on ensuring safeguards in the deployment of the Generation IV systems. The format and content of this report is that specified in a template prepared by the GIF PR&PPWG. Other than the level of detail, the key exception to the specified template format is the addition of Appendix C to document the history and status of coated-particle fuel reprocessing technologies, which fuel reprocessing technologies have yet to be

  17. Status of fully integrated GaAs particle detectors

    International Nuclear Information System (INIS)

    Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

    1999-01-01

    GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

  18. The multigap resistive plate chamber as time-of-flight detector for the STAR experiment at RHIC

    International Nuclear Information System (INIS)

    Lamas V, J.

    2002-01-01

    The multigap resistive plate chamber (MRPC) is a suitable candidate for the time-of-flight system for the STAR experiment at RHIC at the BNL. A time resolution of 50 ps with an efficiency of 98% has been measured with MRPCs composed of 6 gas gaps of 220 μm. Results obtained during the year 2000 are reported here

  19. Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

    NARCIS (Netherlands)

    Strijkers, G.J.; Swagten, H.J.M.; Rulkens, B.; Bitter, R.H.J.N.; Jonge, de W.J.M.; Bloemen, P.J.H.; Schep, K.M.

    1998-01-01

    We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The

  20. Resistant starch analysis of commonly consumed potatoes: Content varies by cooking method and service temperature but not by variety

    Science.gov (United States)

    Resistant starch (RS) has properties which may provide health benefits. We conducted a study to determine the contributions of cultivar, cooking method and service temperature on the RS contents of potatoes (Solanum tuberosum L.). We hypothesized that the RS content would vary by variety, cooking me...

  1. Method of determination of temperature and heat resistance of the points on the integrated circuit crystal surface

    Directory of Open Access Journals (Sweden)

    Popov V. M.

    2011-12-01

    Full Text Available Method for visualization of integrated circuit (IC surface temperature by means of the liquid crystal film deposited from solution on its surface is proposed. The boundaries of local regions represent isotherms with corresponding phase transitions. On the base of isotherms positions and consumed by IC power thermal resistances between crystal and environment are determined.

  2. Dual-Energy Semiconductor Detector of X-rays and Gamma Radiation

    Directory of Open Access Journals (Sweden)

    Brodyn, M.S.

    2014-03-01

    Full Text Available Analysis of the major types of ionizing radiation detectors, their advantages and disadvantages are presented. Application of ZnSe-based semiconductor detector in high temperature environment is substantiated. Different forms of ZnSe-based detector samples and double-crystal scheme for registration of X- and gamma rays in a broad energy range were used . Based on the manufactured simulator device, the study sustains the feasibility of the gamma quanta recording by a high-resistance ZnSe-based detector operating in a perpulse mode.

  3. First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10 sup 1 sup 4 n/cm sup 2

    CERN Document Server

    Li Zheng; Eremin, V; Li, C J; Verbitskaya, E

    1999-01-01

    Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm sup 2 areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k OMEGA cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2x10 sup 1 sup 4 n/cm sup 2) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k OMEGA cm (300 mu m thick) can be fully depleted before and after an irradiation of 2x10 sup 1 sup 4 n/cm sup 2. For a 500 mu m pitch strip detector made of 2.7 k OMEGA cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7x10 sup 1 sup 3 n/cm sup 2 irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We als...

  4. Radiation Tolerance of Controlled Fusion Welds in High Temperature Oxidation Resistant FeCrAl Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gussev, Maxim N. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Field, Kevin G. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    High temperature oxidation resistant iron-chromium-aluminum (FeCrAl) alloys are candidate alloys for nuclear applications due to their exceptional performance during off-normal conditions such as a loss-of-coolant accident (LOCA) compared to currently deployed zirconium-based claddings [1]. A series of studies have been completed to determine the weldability of the FeCrAl alloy class and investigate the weldment performance in the as-received (non-irradiated) state [2,3]. These initial studies have shown the general effects of composition and microstructure on the weldability of FeCrAl alloys. Given this, limited details on the radiation tolerance of FeCrAl alloys and their weldments exist. Here, the highest priority candidate FeCrAl alloys and their weldments have been investigated after irradiation to enable a better understanding of FeCrAl alloy weldment performance within a high-intensity neutron field. The alloys examined include C35M (Fe-13%Cr-5% Al) and variants with aluminum (+2%) or titanium carbide (+1%) additions. Two different sub-sized tensile geometries, SS-J type and SS-2E (or SS-mini), were neutron irradiated in the High Flux Isotope Reactor to 1.8-1.9 displacements per atom (dpa) in the temperature range of 195°C to 559°C. Post irradiation examination of the candidate alloys was completed and included uniaxial tensile tests coupled with digital image correlation (DIC), scanning electron microscopy-electron back scattered diffraction analysis (SEM-EBSD), and SEM-based fractography. In addition to weldment testing, non-welded parent material was examined as a direct comparison between welded and non-welded specimen performance. Both welded and non-welded specimens showed a high degree of radiation-induced hardening near irradiation temperatures of 200°C, moderate radiation-induced hardening near temperatures of 360°C, and almost no radiation-induced hardening at elevated temperatures near 550°C. Additionally, low-temperature irradiations showed

  5. Advanced semiconductor detector development: Development of a room-temperature, gamma ray detector using gallium arsenide to develop an electrode detector. Progress report, September 30, 1994--September 29, 1995

    International Nuclear Information System (INIS)

    Knoll, G.F.

    1995-07-01

    Devices fabricated from wide bandgap materials that can be operated without cooling suffer from poor energy resolution and are limited to very small volumes; this arises largely from poor hole mobility in compound semiconductors. Three different device configurations are being investigated for possibly overcoming this limitation: buried grid-single carrier devices, trenched single carrier devices, and devices using patterned coplanar electrodes (CdZnTe). In the first, leakage problems were encountered. For the second, a set of specifications has been completed, and electron cyclotron resonance etching will be done at an off-campus facility. For the third, Aurora will supply 3 different CdZnTe detectors. An analytical study was done of the patterned electrode approach

  6. Temperature-induced plasticity in egg size and resistance of eggs to temperature stress in a soil arthropod

    NARCIS (Netherlands)

    Liefting, M.; Weerenbeck, M.; Dooremalen, van C.; Ellers, J.

    2010-01-01

    Keywords:acclimation;cold shock;development rate;egg hatching;heat shock;phenotypic plasticity;Orchesella cincta;oviposition temperature Summary 1. Temperature is considered one of the most important mediators of phenotypic plasticity in ectotherms, resulting in predictable changes in egg size.

  7. Ultralight and fire-resistant ceramic nanofibrous aerogels with temperature-invariant superelasticity.

    Science.gov (United States)

    Si, Yang; Wang, Xueqin; Dou, Lvye; Yu, Jianyong; Ding, Bin

    2018-04-01

    Ultralight aerogels that are both highly resilient and compressible have been fabricated from various materials including polymer, carbon, and metal. However, it has remained a great challenge to realize high elasticity in aerogels solely based on ceramic components. We report a scalable strategy to create superelastic lamellar-structured ceramic nanofibrous aerogels (CNFAs) by combining SiO 2 nanofibers with aluminoborosilicate matrices. This approach causes the random-deposited SiO 2 nanofibers to assemble into elastic ceramic aerogels with tunable densities and desired shapes on a large scale. The resulting CNFAs exhibit the integrated properties of flyweight densities of >0.15 mg cm -3 , rapid recovery from 80% strain, zero Poisson's ratio, and temperature-invariant superelasticity to 1100°C. The integral ceramic nature also provided the CNFAs with robust fire resistance and thermal insulation performance. The successful synthesis of these fascinating materials may provide new insights into the development of ceramics in a lightweight, resilient, and structurally adaptive form.

  8. TA [B] Predicting Microstructure-Creep Resistance Correlation in High Temperature Alloys over Multiple Time Scales

    Energy Technology Data Exchange (ETDEWEB)

    Tomar, Vikas [Purdue Univ., West Lafayette, IN (United States)

    2017-03-06

    DoE-NETL partnered with Purdue University to predict the creep and associated microstructure evolution of tungsten-based refractory alloys. Researchers use grain boundary (GB) diagrams, a new concept, to establish time-dependent creep resistance and associated microstructure evolution of grain boundaries/intergranular films GB/IGF controlled creep as a function of load, environment, and temperature. The goal was to conduct a systematic study that includes the development of a theoretical framework, multiscale modeling, and experimental validation using W-based body-centered-cubic alloys, doped/alloyed with one or two of the following elements: nickel, palladium, cobalt, iron, and copper—typical refractory alloys. Prior work has already established and validated a basic theory for W-based binary and ternary alloys; the study conducted under this project extended this proven work. Based on interface diagrams phase field models were developed to predict long term microstructural evolution. In order to validate the models nanoindentation creep data was used to elucidate the role played by the interface properties in predicting long term creep strength and microstructure evolution.

  9. High temperature oxidation resistance of (Ti,Ta)(C,N)-based cermets

    International Nuclear Information System (INIS)

    Chicardi, E.; Córdoba, J.M.; Gotor, F.J.

    2016-01-01

    Highlights: • Cermets based on (Ti,Ta)(C,N) were oxidized in air between 800 and 1100 °C for 48 h. • The substitution of Ti by Ta resulted in a high resistance to oxidation. • A protective layer of cobalt titanates at the surface of cermets was observed. • A rutile phase in which some Ti"4"+ are replaced by Ta"5"+ was detected. • This replacement decelerated the oxygen diffusion into the cermets. - Abstract: Cermets based on titanium–tantalum carbonitride were oxidized in static air between 800 °C and 1100 °C for 48 h. The thermogravimetric and microstructural study showed an outstanding reduction in the oxidation of more than 90% when the Ta content was increased. In cermets with low Ta content, the formation of a thin CoO/Co_3O_4 outer layer tends to disappear by reacting with the underlying rutile phase, which emerges at the surface. However, in cermets with higher Ta content, the formation of an external titanate layer, observed even at a low temperature, appears to prevent the oxygen diffusion and the oxidation progression.

  10. Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

    Science.gov (United States)

    Birkett, Martin; Penlington, Roger

    2016-07-01

    We report on the thickness dependence of electrical resistivity of CuAlMo films grown by dc magnetron sputtering on glass substrates at room temperature. The electrical resistance of the films was monitored in situ during their growth in the thickness range 10-1000 nm. By theoretically modelling the evolution of resistivity during growth we were able to gain an insight into the dominant electrical conduction mechanisms with increasing film thickness. For thicknesses in the range 10-25 nm the electrical resistivity is found to be a function of the film surface roughness and is well described by Namba’s model. For thicknesses of 25-40 nm the experimental data was most accurately fitted using the Mayadas and Shatkes model which accounts for grain boundary scattering of the conduction electrons. Beyond 40 nm, the thickness of the film was found to be the controlling factor and the Fuchs-Sonheimer (FS) model was used to fit the experimental data, with diffuse scattering of the conduction electrons at the two film surfaces. By combining the Fuchs and Namba (FN) models a suitable correlation between theoretical and experimental resistivity can be achieved across the full CuAlMo film thickness range of 10-1000 nm. The irreversibility of resistance for films of thickness >200 nm, which demonstrated bulk conductivity, was measured to be less than 0.03% following subjection to temperature cycles of -55 and +125 °C and the temperature co-efficient of resistance was less than ±15 ppm °C-1.

  11. Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

    CERN Document Server

    Makarenko, L F; Korshunov, F P; Murin, L I; Moll, M

    2009-01-01

    It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or higher than 100K. A broad DLTS peak with activation energy of 0.14–0.17eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120 140K. Experimental evidences are presented that be coming more mobile under forwardcurrent injection the self-interstitials change their charge state to a less positive one.

  12. Comparative transcriptome profiling of a thermal resistant vs. sensitive silkworm strain in response to high temperature under stressful humidity condition.

    Directory of Open Access Journals (Sweden)

    Wenfu Xiao

    Full Text Available Thermotolerance is important particularly for poikilotherms such as insects. Understanding the mechanisms by which insects respond to high temperatures can provide insights into their adaptation to the environment. Therefore, in this study, we performed a transcriptome analysis of two silkworm strains with significantly different resistance to heat as well as humidity; the thermo-resistant strain 7532 and the thermos-sensitive strain Knobbed. We identified in total 4,944 differentially expressed genes (DEGs using RNA-Seq. Among these, 4,390 were annotated and 554 were novel. Gene Ontology (GO analysis of 747 DEGs identified between RT_48h (Resistant strain with high-temperature Treatment for 48 hours and ST_48h (Sensitive strain with high-temperature Treatment for 48 hours showed significant enrichment of 12 GO terms including metabolic process, extracellular region and serine-type peptidase activity. Moreover, we discovered 12 DEGs that may contribute to the heat-humidity stress response in the silkworm. Our data clearly showed that 48h post-exposure may be a critical time point for silkworm to respond to high temperature and humidity. These results provide insights into the genes and biological processes involved in high temperature and humidity tolerance in the silkworm, and advance our understanding of thermal tolerance in insects.

  13. Radiation hardness of silicon detectors for collider experiments

    International Nuclear Information System (INIS)

    Golutvin, I.; Cheremukhin, A.; Fefelova, E.

    1995-01-01

    The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

  14. Lithium germanium detectors reactivation

    International Nuclear Information System (INIS)

    Nicolai, J.A.; Marti, G.V.; Riso, J.M.; Gimenez, C.R.

    1981-01-01

    A convenient method to regenerate the characteristics of damaged Ge(li) detectors, that has been applied in the authors' laboratory, is described. The procedure consists in warming-up the crystal in its cryostat to temperatures between 10 deg C and 30 deg C above room temperature, in order to clean its surface. Subsequent cooling down to liquid nitrogen temperature, followed by one or more clean-up drifting processes, are applied to the crystals. This paper summarizes the results obtained with several detectors; this method was applied successfully to 15 detectors more. (author) [es

  15. Erosion resistance of FeAl-TiB2 and FeAl-WC at room and elevated temperatures

    International Nuclear Information System (INIS)

    Alman, D.E.; Tylczak, J.H.; Hawk, J.A.

    2000-01-01

    The resistance of FeAl-40%TiB 2 and FeAl-80%WC cermets to solid particle erosion at 25, 180, 500 and 700 C was evaluated and compared to the behavior of WC-6%Co (Co-90%WC) cemented carbides. Even though the WC-Co contained a higher volume fraction of the hard phase, the erosion rates of the FeAl-cermets were similar in magnitude to the erosion rates of the WC-Co. However, the erosion rates of the FeAl-cermets either were constant (FeAl-TiB 2 ) or decreased (FeAl-WC) with increasing test temperature; whereas, the erosion rates of the WC-Co cemented carbides increased with increasing test temperature. This indicated that once the microstructures of the FeAl-cermets are optimized for wear resistance, these materials might make promising candidates for high-temperature wear applications

  16. Influence of Step Annealing Temperature on the Microstructure and Pitting Corrosion Resistance of SDSS UNS S32760 Welds

    Science.gov (United States)

    Yousefieh, M.; Shamanian, M.; Saatchi, A.

    2011-12-01

    In the present work, the influence of step annealing heat treatment on the microstructure and pitting corrosion resistance of super duplex stainless steel UNS S32760 welds have been investigated. The pitting corrosion resistance in chloride solution was evaluated by potentiostatic measurements. The results showed that step annealing treatments in the temperature ranging from 550 to 1000 °C resulted in a precipitation of sigma phase and Cr2N along the ferrite/austenite and ferrite/ferrite boundaries. At this temperature range, the metastable pits mainly nucleated around the precipitates formed in the grain boundary and ferrite phase. Above 1050 °C, the microstructure contains only austenite and ferrite phases. At this condition, the critical pitting temperature of samples successfully arrived to the highest value obtained in this study.

  17. Temperature Dependence of Electrical Resistance of Woven Melt-Infiltrated SiCf/SiC Ceramic Matrix Composites

    Science.gov (United States)

    Appleby, Matthew P.; Morscher, Gregory N.; Zhu, Dongming

    2016-01-01

    Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.

  18. Ab initio structure determination of nanocrystals of organic pharmaceutical compounds by electron diffraction at room temperature using a Timepix quantum area direct electron detector

    Energy Technology Data Exchange (ETDEWEB)

    Genderen, E. van; Clabbers, M. T. B. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Das, P. P. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Stewart, A. [Department of Physics and Energy, Materials and Surface Science Institute (MSSI), University of Limerick, Limerick (Ireland); Nederlof, I. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Amsterdam Scientific Instruments, Postbus 41882, 1009 DB Amsterdam (Netherlands); Barentsen, K. C. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Portillo, Q. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Centres Científics i Tecnològics de la Universitat de Barcelona, University of Barcelona, Carrer de Lluís Solé i Sabaris, 1-3, Barcelona (Spain); Pannu, N. S. [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Nicolopoulos, S. [Nanomegas SPRL, Boulevard Edmond Machtens 79, B 1080, Brussels (Belgium); Gruene, T., E-mail: tim.gruene@psi.ch [Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland); Abrahams, J. P., E-mail: tim.gruene@psi.ch [Biophysical Structural Chemistry, Leiden University, Einsteinweg 55, 2333 CC Leiden (Netherlands); Center for Cellular Imaging and NanoAnalytics (C-CINA), Biozentrum, University of Basel, CH-4058 Basel (Switzerland); Biology and Chemistry, Laboratory of Biomolecular Research, Paul Scherrer Institute (PSI), 5232 Villigen (Switzerland)

    2016-02-05

    A specialized quantum area detector for electron diffraction studies makes it possible to solve the structure of small organic compound nanocrystals in non-cryo conditions by direct methods. Until recently, structure determination by transmission electron microscopy of beam-sensitive three-dimensional nanocrystals required electron diffraction tomography data collection at liquid-nitrogen temperature, in order to reduce radiation damage. Here it is shown that the novel Timepix detector combines a high dynamic range with a very high signal-to-noise ratio and single-electron sensitivity, enabling ab initio phasing of beam-sensitive organic compounds. Low-dose electron diffraction data (∼0.013 e{sup −} Å{sup −2} s{sup −1}) were collected at room temperature with the rotation method. It was ascertained that the data were of sufficient quality for structure solution using direct methods using software developed for X-ray crystallography (XDS, SHELX) and for electron crystallography (ADT3D/PETS, SIR2014)

  19. Ionization detector

    International Nuclear Information System (INIS)

    Steele, D.S.

    1987-01-01

    An ionization detector having an array of detectors has, for example, grounding pads positioned in the spaces between some detectors (data detectors) and other detectors (reference detectors). The grounding pads are kept at zero electric potential, i.e. grounded. The grounding serves to drain away electrons and thereby prevent an unwanted accumulation of charge in the spaces, and cause the electric field lines to be more perpendicular to the detectors in regions near the grounding pads. Alternatively, no empty space is provided there being additional, grounded, detectors provided between the data and reference detectors. (author)

  20. In-season heat stress compromises postharvest quality and low-temperature sweetening resistance in potato (Solanum tuberosum L.).

    Science.gov (United States)

    Zommick, Daniel H; Knowles, Lisa O; Pavek, Mark J; Knowles, N Richard

    2014-06-01

    The effects of soil temperature during tuber development on physiological processes affecting retention of postharvest quality in low-temperature sweetening (LTS) resistant and susceptible potato cultivars were investigated. 'Premier Russet' (LTS resistant), AO02183-2 (LTS resistant) and 'Ranger Russet' (LTS susceptible) tubers were grown at 16 (ambient), 23 and 29 °C during bulking (111-164 DAP) and maturation (151-180 DAP). Bulking at 29 °C virtually eliminated yield despite vigorous vine growth. Tuber specific gravity decreased as soil temperature increased during bulking, but was not affected by temperature during maturation. Bulking at 23 °C and maturation at 29 °C induced higher reducing sugar levels in the proximal (basal) ends of tubers, resulting in non-uniform fry color at harvest, and abolished the LTS-resistant phenotype of 'Premier Russet' tubers. AO02183-2 tubers were more tolerant of heat for retention of LTS resistance. Higher bulking and maturation temperatures also accelerated LTS and loss of process quality of 'Ranger Russet' tubers, consistent with increased invertase and lower invertase inhibitor activities. During LTS, tuber respiration fell rapidly to a minimum as temperature decreased from 9 to 4 °C, followed by an increase to a maximum as tubers acclimated to 4 °C; respiration then declined over the remaining storage period. The magnitude of this cold-induced acclimation response correlated directly with the extent of buildup in sugars over the 24-day LTS period and thus reflected the effects of in-season heat stress on propensity of tubers to sweeten and lose process quality at 4 °C. While morphologically indistinguishable from control tubers, tubers grown at elevated temperature had different basal metabolic (respiration) rates at harvest and during cold acclimation, reduced dormancy during storage, greater increases in sucrose and reducing sugars and associated loss of process quality during LTS, and reduced ability to improve