On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

International Nuclear Information System (INIS)

Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

2016-01-01

The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

Science.gov (United States)

Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

2008-07-01

It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

International Nuclear Information System (INIS)

Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

2016-01-01

An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

Ti/Al Ohmic Contacts to n-Type GaN Nanowires

Directory of Open Access Journals (Sweden)

Gangfeng Ye

2011-01-01

Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

Directory of Open Access Journals (Sweden)

Wojciech Macherzynski

2016-01-01

Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

Characterization of recessed Ohmic contacts to AlGaN/GaN

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2015-01-01

In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

Science.gov (United States)

Wang, Cong; Kim, Nam-Young

2012-02-07

Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

W and WSix Ohmic contacts on p- and n-type GaN

International Nuclear Information System (INIS)

Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

1999-01-01

W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

Ohmic contacts to InN-based materials

Directory of Open Access Journals (Sweden)

Sai P. O.

2016-10-01

Full Text Available The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered.

On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Energy Technology Data Exchange (ETDEWEB)

Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

2016-08-15

The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Science.gov (United States)

Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

2017-07-01

Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Energy Technology Data Exchange (ETDEWEB)

Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

2015-02-02

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

NARCIS (Netherlands)

Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

2002-01-01

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

Ohmic Contacts to P-Type SiC

National Research Council Canada - National Science Library

Crofton, John

2000-01-01

Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

2017-01-01

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

KAUST Repository

Yonkee, Benjamin P.

2017-10-31

Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

Science.gov (United States)

Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

2018-03-01

Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Directory of Open Access Journals (Sweden)

Patrick H. Carey IV

2017-09-01

Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Science.gov (United States)

Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

2017-09-01

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

International Nuclear Information System (INIS)

Liu, Bingbing; Qin, Fuwen; Wang, Dejun

2015-01-01

Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

Science.gov (United States)

Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

2014-11-01

Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

Metallization systems for stable ohmic contacts to GaAs

International Nuclear Information System (INIS)

Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

1986-01-01

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.

2017-07-01

The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

Flexible carbon-based ohmic contacts for organic transistors

Science.gov (United States)

Brandon, Erik (Inventor)

2007-01-01

The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

Science.gov (United States)

Radulescu, Fabian

2000-12-01

associated with each phase from the videotape recordings. With the exception of the Pd-GaAs interactions, it was found that four phase transformations occur during annealing of the Pd:Ge thin films on top of GaAs. The microstructural information was correlated with specific ohmic contact resistivity measurements performed in accordance with the transmission line method (TLM) and these results demonstrated that the Ge SPE growth on top of GaAs renders the optimal electrical properties for the contact. By using the focused ion beam (FIB) method to produce microcantilever beams, the residual stress present in the thin film system was studied in connection with the microstructure. Although, the PdGe/epi-Ge/GaAs seemed to be the optimal microstructural configuration, the presence of PdGe at the interface with GaAs did not damage the contact resistivity significantly. These results made it difficult to establish a charge transport mechanism across the interface but they explained the wide processing window associated with this contact.

Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

International Nuclear Information System (INIS)

Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

2013-01-01

The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

International Nuclear Information System (INIS)

Redondo-Cubero, A; Alves, L C; Corregidor, V; Vázquez, L; Romero, M F; Muñoz, E; Pantellini, A; Lanzieri, C

2014-01-01

The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAl x and AuAl x phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals. (paper)

Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

International Nuclear Information System (INIS)

Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Li, J.; Lin, J. Y.; Jiang, H. X.

2006-01-01

The effects of surface treatment using Cl 2 /BCl 3 and Ar inductive coupled plasmas on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-type Al x Ga 1-x N (x=0-0.5) were investigated. Plasma treatment significantly increased the surface conductivity of GaN and Al 0.1 Ga 0.9 N, leading to improved Ohmic behaviors of the contacts. However, it reduced the surface doping level in Al x Ga 1-x N (x≥0.3) and degraded the contact properties. Following a 900-1000 deg. C anneal, the Ti/Al/Ti/Au contacts to Al x Ga 1-x N (x=0-0.3) became truly Ohmic, with specific contact resistances of (3-7)x10 -5 Ω cm 2 , whereas the contact to Al 0.5 Ga 0.5 N remained rectifying even without the plasma treatment. X-ray photoelectron spectroscopy measurements confirmed that the Fermi level moved toward the conduction band in GaN after the plasma treatment, but it was pinned by plasma-induced deep-level states in Al 0.5 Ga 0.5 N. This study emphasizes the need to mitigate plasma damage introduced during the mesa etch step for AlGaN-based deep-UV emitters and detectors

Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

NARCIS (Netherlands)

Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

2014-01-01

For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Science.gov (United States)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Science.gov (United States)

Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

2017-10-01

In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

Laser-annealed GaP OHMIC contacts for high-temperature devices

International Nuclear Information System (INIS)

Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

1980-01-01

The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

International Nuclear Information System (INIS)

Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

2015-01-01

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Science.gov (United States)

Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

2002-07-01

We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

Energy Technology Data Exchange (ETDEWEB)

Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

2009-07-01

Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

Improvement of Ohmic contacts on Ga₂O₃ through use of ITO-interlayers

Energy Technology Data Exchange (ETDEWEB)

Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

2017-10-03

In this work, the use of ITO interlayers between Ga₂O₃ and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga₂O₃ stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10^-5 Ω cm² were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga₂O₃ is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

Effects of nanoscale coatings on reliability of MEMS ohmic contact switches

Science.gov (United States)

Tremper, Amber Leigh

also increases the dependence on force. This thesis also details that the relative contribution of contact resistance to the total measured resistance can be maximized by decreasing the probe spacing and tip radius. AFM testing of the layered systems showed that the coated samples had larger predicted plane strain moduli than the Au sample, in contrast to the nanoindentation testing. Thus, when the contact depth was kept sufficiently small, the contact stiffness increased as predicted by substrate models. When the contact depth was on the order of the coating thickness, the contact stiffness actually decreased. Additionally, the forceseparation plots showed that the Ru and Pt surfaces either accumulated large amounts of contamination or were less susceptible to being wiped clean than the Au film. Further, scratch testing of the Au film and Ru and Pt coatings show that the hard surface coatings reduce material removal and contact wear. Ultra-thin Ru and Pt surface coatings on Au films are shown to be improved material systems for ohmic contact switches. The wear is reduced for coated materials, while the resistance and power consumption through the coating are not significantly affected.

Low resistivity contacts to YBa2Cu3O(7-x) superconductors

Science.gov (United States)

Hsi, Chi-Shiung; Haertling, Gene H.

1991-01-01

Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

Low ohmic multilayer contacts in lead-tin-telluride diode lasers

International Nuclear Information System (INIS)

Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

1983-01-01

The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

Energy Technology Data Exchange (ETDEWEB)

Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-14

In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

Directory of Open Access Journals (Sweden)

Ye Tian

2012-03-01

Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

Energy Technology Data Exchange (ETDEWEB)

Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

2014-10-28

Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D} = 3 × 10{sup 19 }cm{sup −3}) with a specific contact resistance (ρ{sub c}) of 4.0 × 10{sup −8 }± 7 × 10{sup −9} Ω·cm{sup 2} and 4.6 × 10{sup −8 }± 9 × 10{sup −9} Ω·cm{sup 2}, respectively, after annealing at 350 °C for 60 s. With an ammonium sulfide pre-metallization surface treatment, ρ{sub c} is further reduced to 2.1 × 10{sup −8 }± 2 × 10{sup −9} Ω·cm{sup 2} and 1.8 × 10{sup −8 }± 1 × 10{sup −9} Ω·cm{sup 2} on epilayers with and without 10 nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

International Nuclear Information System (INIS)

Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

2013-01-01

Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

International Nuclear Information System (INIS)

Wang, H.T.; Tan, L.S.; Chor, E.F.

2007-01-01

Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

Science.gov (United States)

Hou, Minmin; Senesky, Debbie G.

2014-08-01

The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

2016-07-25

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N.; Gnade, B. E.

2010-01-01

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

KAUST Repository

Gupta, Rahul P.

2010-04-27

A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.

Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

Science.gov (United States)

Cui, Xu

MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

Graphene in ohmic contact for both n-GaN and p-GaN

Energy Technology Data Exchange (ETDEWEB)

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

Science.gov (United States)

Oh, Min-Suk

2018-04-01

We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

The role of contact resistance in graphene field-effect devices

Science.gov (United States)

Giubileo, Filippo; Di Bartolomeo, Antonio

2017-08-01

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not related to the material quality, but to extrinsic factors that affect the electronic transport properties. One of the most important parasitic element is the contact resistance appearing between graphene and the metal electrodes functioning as the source and the drain. Ohmic contacts to graphene, with low contact resistances, are necessary for injection and extraction of majority charge carriers to prevent transistor parameter fluctuations caused by variations of the contact resistance. The International Technology Roadmap for Semiconductors, toward integration and down-scaling of graphene electronic devices, identifies as a challenge the development of a CMOS compatible process that enables reproducible formation of low contact resistance. However, the contact resistance is still not well understood despite it is a crucial barrier towards further improvements. In this paper, we review the experimental and theoretical activity that in the last decade has been focusing on the reduction of the contact resistance in graphene transistors. We will summarize the specific properties of graphene-metal contacts with particular attention to the nature of metals, impact of fabrication process, Fermi level pinning, interface modifications induced through surface processes, charge transport mechanism, and edge contact formation.

Bulk and contact resistances of gas diffusion layers in proton exchange membrane fuel cells

Science.gov (United States)

Ye, Donghao; Gauthier, Eric; Benziger, Jay B.; Pan, Mu

2014-06-01

A multi-electrode probe is employed to distinguish the bulk and contact resistances of the catalyst layer (CL) and the gas diffusion layer (GDL) with the bipolar plate (BPP). Resistances are compared for Vulcan carbon catalyst layers (CL), carbon paper and carbon cloth GDL materials, and GDLs with microporous layers (MPL). The Vulcan carbon catalyst layer bulk resistance is 100 times greater than the bulk resistance of carbon paper GDL (Toray TG-H-120). Carbon cloth (CCWP) has bulk and contact resistances twice those of carbon paper. Compression of the GDL decreases the GDL contact resistance, but has little effect on the bulk resistance. Treatment of the GDL with polytetrafluoroethylene (PTFE) increases the contact resistance, but has little effect on the bulk resistance. A microporous layer (MPL) added to the GDL decreases the contact resistance, but has little effect on the bulk resistance. An equivalent circuit model shows that for channels less than 1 mm wide the contact resistance is the major source of electronic resistance and is about 10% of the total ohmic resistance associated with the membrane electrode assembly.

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

DEFF Research Database (Denmark)

Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

2018-01-01

Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

OpenAIRE

Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

2008-01-01

The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

Current simulation of symmetric contacts on CdTe

International Nuclear Information System (INIS)

Ruzin, A.

2011-01-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Current simulation of symmetric contacts on CdTe

Energy Technology Data Exchange (ETDEWEB)

Ruzin, A., E-mail: aruzin@post.tau.ac.il [School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

2011-12-01

This article presents the calculated current-voltage characteristics of symmetric Metal-Semiconductor-Metal configurations for Schottky, Ohmic, and injecting-Ohmic contacts on high resistivity CdTe. The results clearly demonstrate that in the wide band-gap, semi-insulating semiconductors, such as high resistivity CdTe, the linearity of the I-V curves cannot be considered a proof of the ohmicity of the contacts. It is shown that the linear I-V curves are expected for a wide range of contact barriers. Furthermore, the slope of these linear curves is governed by the barrier height, rather than the bulk doping concentration. Therefore the deduction of bulk's resistivity from the I-V curves may be false.

Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

Energy Technology Data Exchange (ETDEWEB)

Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

2015-10-21

This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

Effect of composition on the polarization and ohmic resistances of ...

Indian Academy of Sciences (India)

2017-06-09

Jun 9, 2017 ... Solid oxide fuel cell; composite cathodes; polarization resistance; ohmic resistance; ... of Oad on LSM, (iii) conversion of Oad into oxygen ion ... ions need to flow through the low temperature sintered ..... TPB's are present) suggest the formation of face-to-face con- ..... calculated using the following equation.

Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal

Energy Technology Data Exchange (ETDEWEB)

Shaygan, Mehrdad; Otto, Martin; Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen, AMO GmbH, Aachen (Germany); Chavarin, Carlos A. [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany); Innovations for High Performance Microelectronics, IHP GmbH, Frankfurt (Oder) (Germany); Bacher, Gerd; Mertin, Wolfgang [Lehrstuhl Werkstoffe der Elektrotechnik, Duisburg-Essen Univ., Duisburg (Germany)

2017-11-15

The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the direct measurement using Kelvin Probe Force Microscopy demonstrates a very low width specific contact resistance down to 130 Ωμm. The contact resistance is found to be stable for annealing temperatures up to 150 C enabling further device processing. Using this contact scheme for edge contacts, a field effect transistor based on CVD graphene with a high transconductance of 0.63 mS/μm at 1 V bias voltage is fabricated. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

International Nuclear Information System (INIS)

Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

2006-01-01

The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

Comparative Study Between Internal Ohmic Resistance and Capacity for Battery State of Health Estimation

Directory of Open Access Journals (Sweden)

M. Nisvo Ramadan

2015-12-01

Full Text Available In order to avoid battery failure, a battery management system (BMS is necessary. Battery state of charge (SOC and state of health (SOH are part of information provided by a BMS. This research analyzes methods to estimate SOH based lithium polymer battery on change of its internal resistance and its capacity. Recursive least square (RLS algorithm was used to estimate internal ohmic resistance while coloumb counting was used to predict the change in the battery capacity. For the estimation algorithm, the battery terminal voltage and current are set as the input variables. Some tests including static capacity test, pulse test, pulse variation test and before charge-discharge test have been conducted to obtain the required data. After comparing the two methods, the obtained results show that SOH estimation based on coloumb counting provides better accuracy than SOH estimation based on internal ohmic resistance. However, the SOH estimation based on internal ohmic resistance is faster and more reliable for real application

Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

1986-01-01

We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

International Nuclear Information System (INIS)

Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

1985-01-01

AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

Energy Technology Data Exchange (ETDEWEB)

Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

2016-10-14

We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

International Nuclear Information System (INIS)

Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

2012-01-01

Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

Energy Technology Data Exchange (ETDEWEB)

Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-02-01

Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

International Nuclear Information System (INIS)

Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

2015-01-01

The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

Ohmic Heating: Concept and Applications-A Review.

Science.gov (United States)

Kaur, Nimratbir; Singh, A K

2016-10-25

Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

Lifetime limitations of ohmic, contacting RF MEMS switches with Au, Pt and Ir contact materials due to accumulation of ‘friction polymer’ on the contacts

International Nuclear Information System (INIS)

Czaplewski, David A; Nordquist, Christopher D; Dyck, Christopher W; Patrizi, Gary A; Kraus, Garth M; Cowan, William D

2012-01-01

We present lifetime limitations and failure analysis of many packaged RF MEMS ohmic contacting switches with Au–Au, Au–Ir, and Au–Pt contact materials operating with 100 µN of contact force per contact in hermetically sealed glass wall packages. All metals were tested using the same switch design in a controlled environment to provide a comparison between the performance of the different materials and their corresponding failure mechanisms. The switch lifetimes of the different contact materials varied from several hundred cycles to 200 million cycles with different mechanisms causing failures for different contact materials. Switches with Au–Au contacts failed due to adhesion when thoroughly cleaned while switches with dissimilar metal contacts (Au–Ir and Au–Pt) operated without adhesion failures but failed due to carbon accumulation on the contacts even in a clean, packaged environment as a result of the catalytic behavior of the contact materials. Switch lifetimes correlated inversely with catalytic behavior of the contact metals. The data suggests the path to increase switch lifetime is to use favorable catalytic materials as contacts, design switches with higher contact forces to break through any residual contamination, and use cleaner, probably smaller, packages. (paper)

Metal Contacts to Gallium Arsenide.

Science.gov (United States)

Ren, Fan

1991-07-01

While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures.

Science.gov (United States)

Zheng, Changxi; Zhang, Qianhui; Weber, Bent; Ilatikhameneh, Hesameddin; Chen, Fan; Sahasrabudhe, Harshad; Rahman, Rajib; Li, Shiqiang; Chen, Zhen; Hellerstedt, Jack; Zhang, Yupeng; Duan, Wen Hui; Bao, Qiaoliang; Fuhrer, Michael S

2017-03-28

Large-area two-dimensional (2D) heterojunctions are promising building blocks of 2D circuits. Understanding their intriguing electrostatics is pivotal but largely hindered by the lack of direct observations. Here graphene-WS 2 heterojunctions are prepared over large areas using a seedless ambient-pressure chemical vapor deposition technique. Kelvin probe force microscopy, photoluminescence spectroscopy, and scanning tunneling microscopy characterize the doping in graphene-WS 2 heterojunctions as-grown on sapphire and transferred to SiO 2 with and without thermal annealing. Both p-n and n-n junctions are observed, and a flat-band condition (zero Schottky barrier height) is found for lightly n-doped WS 2 , promising low-resistance ohmic contacts. This indicates a more favorable band alignment for graphene-WS 2 than has been predicted, likely explaining the low barriers observed in transport experiments on similar heterojunctions. Electrostatic modeling demonstrates that the large depletion width of the graphene-WS 2 junction reflects the electrostatics of the one-dimensional junction between two-dimensional materials.

Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

Directory of Open Access Journals (Sweden)

Chung-Hua Chao

2013-01-01

Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

Effect of electrode type in the resistive switching behaviour of TiO2 thin films

International Nuclear Information System (INIS)

Hernández-Rodríguez, E; Zapata-Torres, M; Márquez-Herrera, A; Zaleta-Alejandre, E; Meléndez-Lira, M; Cruz, W de la

2013-01-01

The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO 2 -based metal-oxide-metal devices (MOM) is studied. TiO 2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO 2 active layer, those where Ohmic-Ohmic, Ohmic-Schottky and Schottky-Schottky. The junction type was tested by electrical I-V measurements. It was found that MOM devices made with the Ohmic-Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic-Schottky and Schottky-Schottky combinations. From a detailed analysis of the I-V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole-Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.

Contact metallurgy optimization for ohmic contacts to InP

DEFF Research Database (Denmark)

Clausen, Thomas; Pedersen, Arne Skyggebjerg; Leistiko, Otto

1991-01-01

AuGeNi and AuZnNi metallizations to n- and p-InP were studied as a function of the annealing temperature in a Rapid Thermal Annealing (RTA) system. For n-InP (S:8×1018cm-3) a broad minimum existed from 385°C to 500°C, in which the specific contact resistance, rc, was about 10-7 ¿cm2. The lowe...

Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

Science.gov (United States)

MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

2012-11-27

We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

Annealing-induced interfacial reactions and the effects on the electrical properties of Ga doped ZnO/CuxS contacts to p-GaN

International Nuclear Information System (INIS)

Gu, Wen; Wu, Xingyang; Song, Peng; Zhang, Jianhua

2015-01-01

Highlights: • The electrical properties of GZO/CuS x contacts to p-GaN annealed at different temperatures in air have been studied. • Ohmic contacts were formed by annealing the contacts at 500 and 600 °C in air. • The oxygen in air was found to be essential for the formation of ohmic contact. • The possible formation mechanism of the ohmic contacts was illustrated. - Abstract: Ga-doped ZnO (GZO) contacts to p-GaN were investigated by using Cu x S interlayers under different annealing temperatures. It is shown that the GZO/Cu x S contacts annealed at 300 and 400 °C for 3 min in air exhibited non-ohmic characteristics. However, annealing the contacts at 500 and 600 °C in air resulted in linear current–voltage characteristics. The lowest specific contact resistivity of 1.66 × 10 −2 Ω cm 2 was obtained for the contact annealed at 500 °C. To account for the formation mechanism of the ohmic contact, AES and XPS were used to analyze the interfacial properties of the GZO/Cu x S/p-GaN and Cu x S/p-GaN interfaces, respectively. The possible reasons were discussed in detail, suggesting that the interfacial reactions and atomic diffusions are thought to be responsible for forming such a low contact resistance

Ohmic metallization technology for wide band-gap semiconductors

International Nuclear Information System (INIS)

Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

2002-01-01

Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

2007-01-01

Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

Science.gov (United States)

Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

2017-10-30

We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

Non-ohmic transport behavior in ultra-thin gold films

International Nuclear Information System (INIS)

Alkhatib, A.; Souier, T.; Chiesa, M.

2011-01-01

Highlights: → C-AFM study on ultra-thin gold films. → Connection between ultra-thin film morphology and lateral electrical transport. → Transition between ohmic and non-ohmic behavior. → Electrical transition correlation to the film structure continuity. → Direct and indirect tunneling regimes related to discontinuous structures. - Abstract: Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (10 10 -10 11 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

Remarks on the thermal stability of an Ohmic-heated nanowire

Science.gov (United States)

Timsit, Roland S.

2018-05-01

The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

DEFF Research Database (Denmark)

Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

2002-01-01

We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

CONTACT RESISTANCE MODELING

Directory of Open Access Journals (Sweden)

S. V. LOSKUTOV

2018-05-01

Full Text Available Purpose. To determine the contribution of the real contact spots distribution in the total conductivity of the conductors contact. Methodology. The electrical contact resistance research was carried out on models. The experimental part of this work was done on paper with a graphite layer with membranes (the first type and conductive liquids with discrete partitions (the second type. Findings. It is shown that the contact electrical resistance is mainly determined by the real area of metal contact. The experimental dependence of the electrical resistance of the second type model on the distance between the electrodes and the potential distribution along the sample surface for the first type model were obtained. The theoretical model based on the principle of electric field superposition was considered. The dependences obtained experimentally and calculated by using the theoretical model are in good agreement. Originality. The regularity of the electrical contact resistance formation on a large number of membranes was researched for the first time. A new model of discrete electrical contact based on the liquid as the conducting environment with nuclear membrane partitions was developed. The conclusions of the additivity of contact and bulk electrical resistance were done. Practical value. Based on these researches, a new experimental method of kinetic macroidentation that as a parameter of the metal surface layer deformation uses the real contact area was developed. This method allows to determine the value of average contact stresses, yield point, change of the stress on the depth of deformation depending on the surface treatment.

Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

International Nuclear Information System (INIS)

Xiong, Zhihua; Qin, Zhenzhen; Zhao, Qian; Chen, Lanli

2015-01-01

First-principles calculations are performed to study Ag and Ag-alloy adsorption stability on GaN(0 0 0 1) surface. We find Ag only contact to GaN surface is unstable under high temperature. While Ag-alloy adsorption exhibits better adsorption stability and electronic properties than that of the Ag only contact,due to the enhanced interaction between Ag-alloy and GaN(0 0 0 1) surface. The Ag-alloy, particularly AgNi, is proposed to be used as very promising ohmic contact to GaN for practical applications

Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

International Nuclear Information System (INIS)

Sri Sulamdari; Sudjatmoko; Wirjoadi; Yunanto; Bambang Siswanto

2002-01-01

Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm 2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 10 13 ion/cm 2 - 10 16 ion/cm 2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 o C - 850 o C. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρ s for N type was 1.30 x 10 8 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and annealing temperature 500 o C. While for P type, the ρ s was 1.13 x 10 2 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and energy 40 keV, and annealing temperature 500 o C. (author)

Ohmic Contacts to 2D Semiconductors through van der Waals Bonding

NARCIS (Netherlands)

Farmanbar Gelepordsari, M.; Brocks, G.

2016-01-01

High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the

A review of micro-contact physics, materials, and failure mechanisms in direct-contact RF MEMS switches

International Nuclear Information System (INIS)

Basu, A; Adams, G G; McGruer, N E

2016-01-01

Direct contact, ohmic MEMS switches for RF applications have several advantages over other conventional switching devices. Advantages include lower insertion loss, higher isolation, and better switching figure-of-merit (cut-off frequency). The most important aspect of a direct-contact RF MEMS switch is the metal microcontact which can dictate the lifetime and reliability of the switch. Therefore, an understanding of contact reliability is essential for developing robust MEMS switches. This paper discusses and reviews the most important work done over the past couple of decades toward understanding ohmic micro-contacts. We initially discuss the contact mechanics and multi-physics models for studying Hertzian and multi-asperity contacts. We follow this with a discussion on models and experiments for studying adhesion. We then discuss experimental setups and the development of contact test stations by various groups for accelerated testing of microcontacts, as well as for analysis of contact reliability issues. Subsequently, we analyze a number of material transfer mechanisms in microcontacts under hot and cold switching conditions. We finally review the material properties that can help determine the selection of contact materials. A trade-off between contact resistance and high reliability is almost always necessary during selection of contact material; this paper discusses how the choice of materials can help address such trade-offs. (paper)

Palladium silicide - a new contact for semiconductor radiation detectors

International Nuclear Information System (INIS)

Totterdell, D.H.J.

1981-11-01

Silicide layers can be used as low resistance contacts in semiconductor devices. The formation of a metal rich palladium silicide Pd 2 Si is discussed. A palladium film 100A thick is deposited at 300 0 C and the resulting silicide layer used as an ohmic contact in an n + p silicon detector. This rugged contact has electrical characteristics comparable with existing evaporated gold contacts and enables the use of more reproducible bonding techniques. (author)

Nutritional impact of ohmic heating on fruits and vegetables—A review

Directory of Open Access Journals (Sweden)

Ranvir Kaur

2016-12-01

Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

Science.gov (United States)

Kribes, Y.; Harrison, I.; Tuck, B.; Kim, K. S.; Cheng, T. S.; Foxon, C. T.

1997-11-01

Using epi-layers of different doping concentrations, we have investigated aluminium contacts on n-type gallium nitride grown by plasma source molecular beam epitaxy. To achieve repeatable and reliable results it was found that the semiconductor needed to be etched in aqua-regia before the deposition of the contact metallization. Scanning electron micrographs of the semiconductor surface show a deterioration of the semiconductor surface on etching. The specific contact resistivity of the etched samples were, however, superior. Annealing the contacts at 0268-1242/12/11/030/img9 produced contacts with the lowest specific contact resistance of 0268-1242/12/11/030/img10. The long-term aging of these contacts was also investigated. The contacts and the sheet resistance were both found to deteriorate over a three-month period.

Measuring The Contact Resistances Of Photovoltaic Cells

Science.gov (United States)

Burger, D. R.

1985-01-01

Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

Science.gov (United States)

Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

1994-01-01

The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

Science.gov (United States)

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

International Nuclear Information System (INIS)

Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

2013-01-01

The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

Determination of the Resistance of Cone-Shaped Solid Electrodes

DEFF Research Database (Denmark)

Frandsen, Henrik Lund; Hendriksen, Peter Vang; Koch, Søren

2017-01-01

during processing can be avoided. Newman's formula for current constriction in the electrolyte is then used to deduce the active contact area based on the ohmic resistance of the cell, and from this the surface specific electro-catalytic activity. However, for electrode materials with low electrical......A cone-shaped electrode pressed into an electrolyte can with advantage be utilized to characterize the electro-catalytic properties of the electrode, because it is less dependent on the electrode microstructure than e.g. thin porous composite electrodes, and reactions with the electrolyte occurring...... conductivity (like Ce1-xPrxO2-δ), the resistance of the cell is significantly influenced by the ohmic resistance of the cone electrode, wherefore it must be included. In this work the ohmic resistance of a cone is modelled analytically based on simplified geometries. The two analytical models only differ...

Ohmic Contacts for Technology for Frequency Agile Digitally Synthesized Transmitters

National Research Council Canada - National Science Library

Mohney, Suzanne E

2007-01-01

... bipolar transistors to smaller sizes. For p-type InAs, the combination of modest contact resistance and good thermal stability at 250 0 C was achieved with metallizations that had thin Pd layers deposited first, fol lowed by W or Ti/Pt...

Evaluation of metal–nanowire electrical contacts by measuring contact end resistance

International Nuclear Information System (INIS)

Park, Hongsik; Beresford, Roderic; Xu, Jimmy; Ha, Ryong; Choi, Heon-Jin; Shin, Hyunjung

2012-01-01

It is known, but often unappreciated, that the performance of nanowire (NW)-based electrical devices can be significantly affected by electrical contacts between electrodes and NWs, sometimes to the extent that it is really the contacts that determine the performance. To correctly understand and design NW device operation, it is thus important to carefully measure the contact resistance and evaluate the contact parameters, specific contact resistance and transfer length. A four-terminal pattern or a transmission line model (TLM) pattern has been widely used to measure contact resistance of NW devices and the TLM has been typically used to extract contact parameters of NW devices. However, the conventional method assumes that the electrical properties of semiconducting NW regions covered by a metal are not changed after electrode formation. In this study, we report that the conventional methods for contact evaluation can give rise to considerable errors because of an altered property of the NW under the electrodes. We demonstrate that more correct contact resistance can be measured from the TLM pattern rather than the four-terminal pattern and correct contact parameters including the effects of changed NW properties under electrodes can be evaluated by using the contact end resistance measurement method. (paper)

Reducing contact resistance in graphene devices through contact area patterning.

Science.gov (United States)

Smith, Joshua T; Franklin, Aaron D; Farmer, Damon B; Dimitrakopoulos, Christos D

2013-04-23

Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection. Despite the reduction in M-G contact area caused by these cuts, we find that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices. The crucial role of contact annealing to facilitate this improvement is also elucidated. This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps.

From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

International Nuclear Information System (INIS)

Fisichella, G.; Greco, G.; Roccaforte, F.; Giannazzo, F.

2014-01-01

The electrical behaviour of graphene (Gr) contacts to Al x Ga 1−x N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al 0.25 Ga 0.75 N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (Φ B  ≈ 0.6 eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (Φ B  ≈ 0.9 eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (Φ B ≈ 0.4 eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

Anatomy-performance correlation in Ti-based contact metallizations on AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Mohammed, Fitih M.; Wang, Liang; Koo, Hyung Joon; Adesida, Ilesanmi

2007-01-01

A comprehensive study of the electrical and surface microstructural characteristics of Ti/Au, Ti/Al/Au, Ti/Mo/Au, and Ti/Al/metal/Au schemes, where metal is Ir, Mo, Nb, Pt, Ni, Ta, and Ti, has been carried out to determine the role of constituent components of multilayer contact metallizations on Ohmic contact formation on AlGaN/GaN heterostructures. Attempts have been made to elucidate the anatomy (composition-structure) performance correlation in these schemes. Evidences have been obtained for the necessity of the Al and metal barrier layer as well as an optimal amount of Ti for achieving low-resistance Ohmic contact formation. A strong dependence of electrical properties and intermetallic interactions on the type of metal barrier layer used was found. Scanning electron microscopy characterization, coupled with energy dispersive x-ray spectroscopy, has shown evidence for alloy aggregation, metal layer fragmentation, Al-Au solid solution formation, and possible Au and/or Al reaction with metal layer. Results from the present study provide insights on the active and the necessary role various components of a multilayer contact metallization play for obtaining excellent Ohmic contact formation in the fabrication of AlGaN/GaN high electron mobility transistors

Review of prediction for thermal contact resistance

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

Theoretical prediction research on thermal contact resistance is reviewed in this paper. In general, modeling or simulating the thermal contact resistance involves several aspects, including the descriptions of surface topography, the analysis of micro mechanical deformation, and the thermal models. Some key problems are proposed for accurately predicting the thermal resistance of two solid contact surfaces. We provide a perspective on further promising research, which would be beneficial to understanding mechanisms and engineering applications of the thermal contact resistance in heat transport phenomena.

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R

2018-01-11

The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.

Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

International Nuclear Information System (INIS)

Tian, Ye; Jiang, Lianjun; Zhang, Xuejun; Deng, Yangbao; Deng, Shuguang

2014-01-01

We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructures brought by the etching to their thick surface oxide layer. (paper)

Influence of interfacial layer on contact resistance

NARCIS (Netherlands)

Roy, D.; In 't Zand, M.A.A.; Delhounge, R.; Klootwijk, J.H.; Wolters, Robertus A.M.

2008-01-01

The contact resistance between two materials is dependent on the intrinsic properties of the materials in contact and the presence and properties of an interfacial layer at the contact. This article presents the difference in contact resistance measurements with and without the presence of a process

Effect of implanted doses of N+-ions on the contact resistance of copper contacts

International Nuclear Information System (INIS)

Dubravec, B.; Kovac, P.; Lipka, F.; Padysak, M.

1997-01-01

The paper deals with the effect of implanted doses of N + ions on the contact resistance. Dependencies of the contact resistance versus contact force R c =f(F c ) and microhardness of implanted surfaces were measured for three implanted profiles. The influence of the aggressive environs on the contact resistance of implanted contact is given too

An Experimental Study of the Electrical Contact Resistance in Resistance Welding

DEFF Research Database (Denmark)

Song, Quanfeng; Zhang, Wenqi; Bay, Niels

2005-01-01

Electrical contact resistance is of critical importance in resistance welding. In this article, the contact resistance is experimentally investigated for welding mild steel, stainless steel, and aluminum to themselves. A parametric study was carried out on a Gleeble® machine, investigating...

Estimation of contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lianhong; Liu, Ying; Song, Haimin; Wang, Shuxin [School of Mechanical Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin 300072 (China); Zhou, Yuanyuan; Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2006-11-22

The contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) is an important factor contributing to the power loss in proton exchange membrane (PEM) fuel cells. At present there is still not a well-developed method to estimate such contact resistance. This paper proposes two effective methods for estimating the contact resistance between the BPP and the GDL based on an experimental contact resistance-pressure constitutive relation. The constitutive relation was obtained by experimentally measuring the contact resistance between the GDL and a flat plate of the same material and processing conditions as the BPP under stated contact pressure. In the first method, which was a simplified prediction, the contact area and contact pressure between the BPP and the GDL were analyzed with a simple geometrical relation and the contact resistance was obtained by the contact resistance-pressure constitutive relation. In the second method, the contact area and contact pressure between the BPP and GDL were analyzed using FEM and the contact resistance was computed for each contact element according to the constitutive relation. The total contact resistance was then calculated by considering all contact elements in parallel. The influence of load distribution on contact resistance was also investigated. Good agreement was demonstrated between experimental results and predictions by both methods. The simplified prediction method provides an efficient approach to estimating the contact resistance in PEM fuel cells. The proposed methods for estimating the contact resistance can be useful in modeling and optimizing the assembly process to improve the performance of PEM fuel cells. (author)

Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure

KAUST Repository

Qaisi, Ramy M.; Smith, Casey; Ghoneim, Mohamed T.; Yu, Qingkai; Hussain, Muhammad Mustafa

2013-01-01

We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity 1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics. © 2013 IEEE.

Direct measurement of graphene contact resistivity to pre-deposited metal in buried contact test structure

KAUST Repository

Qaisi, Ramy M.

2013-08-01

We demonstrate a buried contact based novel test structure for direct contact resistivity measurement of graphene-metal interfaces. We also observe excellent contact resistivity 1 μO-cm2 without any additional surface modification suggesting that the intrinsic Au-graphene contact is sufficient for achieving devices with low contact resistance. The chemical mechanical polishing less test structure and data described herein highlights an ideal methodology for systematic screening and engineering of graphene-metal contact resistivity to enable low power high speed carbon electronics. © 2013 IEEE.

Measurement of metal/carbon nanotube contact resistance by adjusting contact length using laser ablation

Energy Technology Data Exchange (ETDEWEB)

Lan Chun; Srisungsitthisunti, Pornsak; Amama, Placidus B; Fisher, Timothy S; Xu Xianfan; Reifenberger, Ronald G [Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States)], E-mail: lan0@physics.purdue.edu

2008-03-26

A technique of measuring contact resistance between an individual nanotube and a deposited metallic film is described. Using laser ablation to sequentially shorten the contact length between a nanotube and the evaporated metallic film, the linear resistivity of the nanotube as well as the specific contact resistivity between the nanotube and metallic film can be determined. This technique can be generally used to measure the specific contact resistance that develops between a metallic film and a variety of different nanowires and nanotubes.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.; Gumus, A.; Kutbee, A. T.; Wehbe, N.; Ahmed, S. M.; Ghoneim, M. T.; Lee, K. -T.; Rogers, J. A.; Hussain, M. M.

2016-01-01

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

KAUST Repository

Bahabry, R. R.

2016-11-30

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Electro-thermal analysis of contact resistance

Science.gov (United States)

Pandey, Nitin; Jain, Ishant; Reddy, Sudhakar; Gulhane, Nitin P.

2018-05-01

Electro-Mechanical characterization over copper samples are performed at the macroscopic level to understand the dependence of electrical contact resistance and temperature on surface roughness and contact pressure. For two different surface roughness levels of samples, six levels of load are selected and varied to capture the bulk temperature rise and electrical contact resistance. Accordingly, the copper samples are modelled and analysed using COMSOLTM as a simulation package and the results are validated by the experiments. The interface temperature during simulation is obtained using Mikic-Elastic correlation and by directly entering experimental contact resistance value. The load values are varied and then reversed in a similar fashion to capture the hysteresis losses. The governing equations & assumptions underlying these models and their significance are examined & possible justification for the observed variations are discussed. Equivalent Greenwood model is also predicted by mapping the results of the experiment.

Effect of Contact Pressure on the Resistance Contact Value and Temperature Changes in Copper Busbar Connection

Directory of Open Access Journals (Sweden)

Agus Risdiyanto

2012-12-01

Full Text Available This paper discussed the influence of tightness or contacts pressure on copper busbar joints to determine changes in the value of the initial contact resistance and the maximum temperature at the joint due to high current load. The test sample was copper busbar 3 x 30 mm with configuration of bolted overlapping joint. Increasing contact pressure at the joint was measured to find out its effect on the value of contact resistance. The applied pressure was 6 to 36 MPa. Procedure of contact resistance measurement refer to the ASTM B539 standard using four-wire method. The sample subsequently loaded with the current of 350 A for 60 minutes and the maximum temperature at the joint was measured. The result showed that increasing contact pressure at the busbar joint will reduce the contact resistance and maximum temperature. The increase of contact pressure from 6 to 30 MPa causes decreasing contact resistance from 16 μΩ to 11 μΩ. Further increasing of contact pressure more than 30 MPa did not affect the contact resistance significantly. The lowest temperatur of busbar joint of 54°C was reached at a contact pressure of 36 Mpa.

The effect of electrode contact resistance and capacitive coupling on Complex Resistivity measurements

DEFF Research Database (Denmark)

Ingeman-Nielsen, Thomas

2006-01-01

The effect of electrode contact resistance and capacitive coupling on complex resistivity (CR) measurements is studied in this paper. An equivalent circuit model for the receiver is developed to describe the effects. The model shows that CR measurements are severely affected even at relatively lo...... with the contact resistance artificially increased by resistors. The results emphasize the importance of keeping contact resistance low in CR measurements....

Bias dependent specic contact resistance of phase change material to metal contacts

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha; Wolters, Robertus A.M.

2010-01-01

Knowledge of contact resistance of phase change materials (PCM) to metal electrodes is important for scaling, device modeling and optimization of phase change random access memory (PCRAM) cells. In this article, we report the systematic determination of the speci_c contact resistance (_c) with

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

International Nuclear Information System (INIS)

Jiang Wei; Gao Hong; Xu Ling-Ling; Ma Jia-Ning; Zhang E; Wei Ping; Lin Jia-Qi

2011-01-01

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes (λ = 505 nm, 460 nm, 375 nm) as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Carrier Transport of Silver Nanowire Contact to p-GaN and its Influence on Leakage Current of LEDs

Science.gov (United States)

Oh, Munsik; Kang, Jae-Wook; Kim, Hyunsoo

2018-03-01

The authors investigated the silver nanowires (AgNWs) contact formed on p-GaN. Transmission line model applied to the AgNWs contact to p-GaN produced near ohmic contact with a specific contact resistance (ρ sc) of 10-1˜10-4 Ω·cm2. Noticeably, the contact resistance had a strong bias-voltage (or current-density) dependence associated with a local joule heating effect. Current-voltage-temperature (I-V-T) measurement revealed a strong temperature dependence with respect to ρ sc, indicating that the temperature played a key role of an enhanced carrier transport. The local joule heating at AgNW/GaN interface, however, resulted in a generation of leakage current of light-emitting diodes (LEDs) caused by degradation of AgNW contact.

An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

Science.gov (United States)

Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

2018-04-01

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

Temperature dependence of contact resistance at metal/MWNT interface

Energy Technology Data Exchange (ETDEWEB)

Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul, E-mail: yoonchul.son@samsung.com [Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803 (Korea, Republic of)

2016-07-11

Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

Effect of the ohmic drop in a RPC-LIKE chamber for measurements of electron transport parameters

Energy Technology Data Exchange (ETDEWEB)

Petri, Anna R.; Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: annapetri@usp.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil); Mangiarotti, Alessio, E-mail: alessio@if.usp.br [Universidade de São Paulo (IF/USP), SP (Brazil). Instituto de Física

2017-07-01

The main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×10{sup 12} Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (E{sub eff}/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the E{sub eff} /N range up to 175 Td. (author)

Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

Energy Technology Data Exchange (ETDEWEB)

Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

2017-08-01

Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

International Nuclear Information System (INIS)

Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

1976-02-01

Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

Science.gov (United States)

Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

2017-12-01

Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

A numerical simulation model of valence-change-based resistive switching

OpenAIRE

Marchewka, Astrid

2017-01-01

Due to their superior scalability and performance, nanoscale resistive switches based on the valence-change mechanism are considered promising candidates for future nonvolatile memory and logic applications. These devices are metal-oxide-metal structures that can be reversibly switched between different resistance states by electrical signals. Typically, they contain one Schottky-like and one ohmic-like metal-oxide contact and exhibit bipolar switching. The switching mechanism and the initial...

Resistance switching in silver - manganite contacts

International Nuclear Information System (INIS)

Gomez-Marlasca, F; Levy, P

2009-01-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Resistance switching in silver - manganite contacts

Energy Technology Data Exchange (ETDEWEB)

Gomez-Marlasca, F [Materia Condensada GIA GAIANN CAC -CNEA, and Instituto de Nanociencia y Nanotecnologia, CNEA, Gral Paz 1499 (1650) San Martin, Pcia. Buenos Aires (Argentina); Levy, P, E-mail: levy@cnea.gov.a

2009-05-01

We investigate the electric pulse induced resistance switching in a transition metal oxide-metal contact at room temperature - a non volatile, reversible and multilevel memory device. Using a simple multiterminal configuration, we find that the complementary effect -in which the contact resistance of each pulsed electrode displays variations of opposite sign- is strongly influenced by the history of the pulsing procedure. Loops performed by varying the magnitude and sign of the stimulus at each pulsed electrode allow to disentangle their sole contribution at different stages of the process. Electromigration of oxygen ions and vacancies is discussed as participating at the core of the underlying mechanisms for resistance switching.

Physical model of the contact resistivity of metal-graphene junctions

Energy Technology Data Exchange (ETDEWEB)

Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

2014-04-28

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

Physical model of the contact resistivity of metal-graphene junctions

International Nuclear Information System (INIS)

Chaves, Ferney A.; Jiménez, David; Cummings, Aron W.; Roche, Stephan

2014-01-01

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems

Contact resistance at ceramic interfaces and its dependence on mechanical load

DEFF Research Database (Denmark)

Koch, Søren; Hendriksen, P.V.

2004-01-01

Low contact resistance between individual components is important for solid oxide fuel cell stacks if high performance is to be achieved. Several mechanisms may result in high contact resistance, e.g., current constriction due to low area of contact and formation of resistive phases between...... the components. In this study, the importance of current constriction due to limited area of contact at an interface is investigated by comparing the characteristics of contacts between LSM pellets with different surface finish. The load behaviour of the contact resistance has been investigated and a power law...... of the contact resistance was calculated using a simple model describing the variation of the contact area with load based on the measured surface roughness. Good agreement between the calculations and the experimentally observed resistances was found. (C) 2004 Elsevier B.V. All rights reserved....

Ultra-low contact resistance in graphene devices at the Dirac point

Science.gov (United States)

Anzi, Luca; Mansouri, Aida; Pedrinazzi, Paolo; Guerriero, Erica; Fiocco, Marco; Pesquera, Amaia; Centeno, Alba; Zurutuza, Amaia; Behnam, Ashkan; Carrion, Enrique A.; Pop, Eric; Sordan, Roman

2018-04-01

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 Ω \\cdot μ m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 Ω \\cdot μ m was obtained under such conditions). The ‘holey’ Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m-1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.

Effects of pressure and temperature on thermal contact resistance between different materials

Directory of Open Access Journals (Sweden)

Zhao Zhe

2015-01-01

Full Text Available To explore whether pressure and temperature can affect thermal contact resistance, we have proposed a new experimental approach for measurement of the thermal contact resistance. Taking the thermal contact resistance between phenolic resin and carbon-carbon composites, cuprum, and aluminum as the examples, the influence of the thermal contact resistance between specimens under pressure is tested by experiment. Two groups of experiments are performed and then an analysis on influencing factors of the thermal contact resistance is presented in this paper. The experimental results reveal that the thermal contact resistance depends not only on the thermal conductivity coefficient of materials, but on the interfacial temperature and pressure. Furthermore, the thermal contact resistance between cuprum and aluminum is more sensitive to pressure and temperature than that between phenolic resin and carbon-carbon composites.

Silicide-to-silicon specific contact resistance characterization

NARCIS (Netherlands)

Stavitski, N.

2009-01-01

The performance of Si integrated circuits depends on the transistor drive current. The drive current of a MOS transistor is determined by the total device resistance, which consists of the channel resistance and the parasitic resistances associated with dopant diffusion areas and contacts. It is

Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

Energy Technology Data Exchange (ETDEWEB)

Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

2012-03-15

Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Method for making low-resistivity contacts to high T/sub c/ superconductors

International Nuclear Information System (INIS)

Ekin, J.W.; Panson, A.J.; Blankenship, B.A.

1988-01-01

A method for making low-resistivity contacts to high T/sub c/ superconductors has been developed, which has achieved contact surface resistivities less than 10 μΩ cm 2 at 76 K and does not require sample heating above ∼150 0 C. This is an upper limit for the contact resistivity obtained at high current densities up to 10 2 --10 3 A/cm 2 across the contact interface. At lower measuring current densities the contact resistivities were lower and the voltage-current curve was nonlinear, having a superconducting transition character. On cooling from 295 to 76 K, the contact resistivity decreased several times, in contrast to indium solder contacts where the resistivity increased on cooling. The contacts showed consistently low resistivity and little degradation when exposed to dry air over a four-month period and when repeatedly cycled between room temperature and 76 K. The contacts are formed by sputter depositing a layer of a noble metal-silver and gold were used-on a clean superconductor surface to protect the surface and serve as a contact pad. External connections to the contact pads have been made using both solder and wire-bonding techniques

Transfer characteristics and contact resistance in Ni- and Ti-contacted graphene-based field-effect transistors

International Nuclear Information System (INIS)

Di Bartolomeo, A; Giubileo, F; Iemmo, L; Romeo, F; Santandrea, S; Gambardella, U

2013-01-01

We produced graphene-based field-effect transistors by contacting mono- and bi-layer graphene by sputtering Ni or Ti as metal electrodes. We performed electrical characterization of the devices by measuring their transfer and output characteristics. We clearly observed the presence of a double-dip feature in the conductance curve for Ni-contacted transistors, and we explain it in terms of charge transfer and graphene doping under the metal contacts. We also studied the contact resistance between the graphene and the metal electrodes with larger values of ∼30 kΩμm 2 recorded for Ti contacts. Importantly, we prove that the contact resistance is modulated by the back-gate voltage. (paper)

Contact resistance of ceramic interfaces between materials used for solid oxide fuel cell applications

Energy Technology Data Exchange (ETDEWEB)

Koch, S.

2002-01-01

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may be smaller or larger than the constriction resistance. The contact resistance between pairs of three different materials were analysed (strontium doped lanthanum manganite, yttria stabilised zirconia and strontium and nickel doped lanthanum cobaltite), and the effects of temperature, atmosphere, polarisation and mechanical load on the contact resistance were investigated. The investigations revealed that the mechanical load of a ceramic contact has a high influence on the contact resistance, and generally power law dependence between the contact resistance and the mechanical load was found. The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constriction at high temperatures. The measured contact resistance was comparable to the resistance calculated on basis of the contact areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential barriers to model the observed behaviour. The current-voltage behaviour of the YSZ contact interfaces was only weakly non-linear, and could be described by 22{+-}1 barriers in series. Contact interfaces with sinterable contact layers were also investigated, and the measured contact resistance for these interfaces were more than 10 times less than for the other interfaces. (au)

Contact Resistance of Ceramic Interfaces Between Materials Used for Solid Oxide Fuel Cell Applications

DEFF Research Database (Denmark)

Koch, Søren

The contact resistance can be divided into two main contributions. The small area of contact between ceramic components results in resistance due to current constriction. Resistive phases or potential barriers at the interface result in an interface contribution to the contact resistance, which may....... The influence of the mechanical load on the contact resistance was ascribed to an area effect. The contact resistance of the investigated materials was dominated by current constric-tion at high temperatures. The measured contact resistance was comparable to the resis-tance calculated on basis of the contact...... areas found by optical and electron microscopy. At low temperatures, the interface contribution to the contact resistance was dominating. The cobaltite interface could be described by one potential barrier at the contact interface, whereas the manganite interfaces required several consecutive potential...

Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

Energy Technology Data Exchange (ETDEWEB)

Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

2014-07-14

β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

International Nuclear Information System (INIS)

Kim, Sun-Hong; Kim, Sung-Soo

2010-01-01

For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Instrument for measuring metal-thermoelectric semiconductor contact resistence

International Nuclear Information System (INIS)

Lanxner, M.; Nechmadi, M.; Meiri, B.; Schildkraut, I.

1979-02-01

An instrument for measuring electrical, metal-thermoelectric semiconductor contact resistance is described. The expected errors of measurement are indicated. The operation of the instrument which is based on potential traversing perpendicularly to the contact plane is illustrated for the case of contacts of palladium and bismuth telluride-based thermoelectric material

Vertical resistivity in nanocrystalline ZnO and amorphous InGaZnO

Science.gov (United States)

McCandless, Jonathan P.; Leedy, Kevin D.; Schuette, Michael L.

2018-02-01

The goal is to gain additional insight into physical mechanisms and the role of microstructure on the formation of ohmic contacts and the reduction of contact resistance. We have measured a decreasing film resistivity in the vertical direction with increasing thickness of pulsed-laser deposited ZnO and IGZO. As the ZnO thickness increases from 122 nm to 441 nm, a reduction in resistivity from 3.29 Ω-cm to 0.364 Ω-cm occurred. The IGZO resistivity changes from 72.4 Ω-cm to 0.642 Ω-cm as the film is increased from 108nm to 219 nm. In the ZnO, the size of nanocolumnar grains increase with thickness resulting in fewer grain boundaries, and in the amorphous IGZO, the thicker region exhibits tunnel-like artifacts which may contribute to the reduced resistivity.

Super high field ohmically heated tokamak operation

International Nuclear Information System (INIS)

Cohn, D.R.; Bromberg, L.; Leclaire, R.J.; Potok, R.E.; Jassby, D.L.

1986-01-01

The authors discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. The super high field mode of operation uses very high values of Β/sup 2/α, where Β is the magnetic field and a is the minor radius (Β/sup 2/α > 100 T/sup 2/m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, expecially in relatively compact devices

Testing and Modeling of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Song, Quanfeng

together two or three cylindrical parts as well as disc-ring pairs of dissimilar metals. The tests have demonstrated the effectiveness of the model. A theoretical and experimental study is performed on the contact resistance aiming at a more reliable model for numerical simulation of resistance welding......As a part of the efforts towards a professional and reliable numerical tool for resistance welding engineers, this Ph.D. project is dedicated to refining the numerical models related to the interface behavior. An FE algorithm for the contact problems in resistance welding has been developed...... for the formulation, and the interfaces are treated in a symmetric pattern. The frictional sliding contact is also solved employing the constant friction model. The algorithm is incorporated into the finite element code. Verification is carried out in some numerical tests as well as experiments such as upsetting...

Analytical models of Ohmic heating and conventional heating in food processing

Science.gov (United States)

Serventi, A.; Bozzoli, F.; Rainieri, S.

2017-11-01

Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

Ignited tokamak devices with ohmic-heating dominated startup

International Nuclear Information System (INIS)

Cohn, D.R.; Bromberg, L.; Jassby, D.L.

1986-01-01

Startup of tokamaks such that the auxiliary heating power is significantly less than the ohmic heating power at all times during heating to ignition can be referred to as ''Ohmic-heating dominated startup.'' Operation in this mode could increase the certainty of heating to ignition since energy confinement during startup may be described by present scaling laws for ohmic heating. It could also reduce substantially the auxiliary heating power (the required power may be quite large for auxiliary-heating dominated startup). These advantages might be realized without the potentially demanding requirements for pure ohmic heating to ignition. In this paper the authors discuss the requirements for ohmic-heating dominated startup and present illustrative design parameters for compact experiment ignition devices that use high performance copper magnets

Characterizations of contact and sheet resistances of vertically aligned carbon nanotube forests with intrinsic bottom contacts

Energy Technology Data Exchange (ETDEWEB)

Jiang Yingqi; Wang Pengbo; Lin Liwei, E-mail: jiangyq99@gmail.com, E-mail: lwlin@me.berkeley.edu [Mechanical Engineering Department, University of California at Berkeley (United States)

2011-09-07

Comprehensive studies on the sheet and contact resistances of vertically aligned carbon nanotube (CNT) forests with as-grown bottom contacts to the metal layer have been conducted. Using microfabrication and four distinct methods: (1) the transfer length method (TLM), (2) the contact chain method, (3) the Kelvin method, and (4) the four point probe method, we have designed multiple testing devices to characterize the resistances of CNT-forest-based devices. Experimental results show that devices based on stripe-shaped CNT forests 100 {mu}m in height and 100 {mu}m in width have a sheet resistance of approximately 100{Omega}/{open_square}. The corresponding specific contact resistance to the molybdenum layer is roughly 5 x 10{sup 4} {Omega} {mu}m{sup 2}. Consistency of the results from the four different methods validates the study. After two months of storage of the CNT forest samples in open air, less than 0.9% deviations in the resistance values were observed. We further demonstrated one application of CNT forests as an NH{sub 3} gas sensor and measured 0.5 ppm of sensing resolution with a detection response time of 1 min.

Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects

International Nuclear Information System (INIS)

Chiodarelli, Nicolo'; Li, Yunlong; Arstila, Kai; Richard, Olivier; Cott, Daire J; Heyns, Marc; De Gendt, Stefan; Groeseneken, Guido; Vereecken, Philippe M; Masahito, Sugiura; Kashiwagi, Yusaku

2011-01-01

Carbon nanotubes (CNT) are known to be materials with potential for manufacturing sub-20 nm high aspect ratio vertical interconnects in future microchips. In order to be successful with respect to contending against established tungsten or copper based interconnects, though, CNT must fulfil their promise of also providing low electrical resistance in integrated structures using scalable integration processes fully compatible with silicon technology. Hence, carefully engineered growth and integration solutions are required before we can fully exploit their potentialities. This work tackles the problem of optimizing a CNT integration process from the electrical perspective. The technique of measuring the CNT resistance as a function of the CNT length is here extended to CNT integrated in vertical contacts. This allows extracting the linear resistivity and the contact resistance of the CNT, two parameters to our knowledge never reported separately for vertical CNT contacts and which are of utmost importance, as they respectively measure the quality of the CNT and that of their metal contacts. The technique proposed allows electrically distinguishing the impact of each processing step individually on the CNT resistivity and the CNT contact resistance. Hence it constitutes a powerful technique for optimizing the process and developing CNT contacts of superior quality. This can be of relevant technological importance not only for interconnects but also for all those applications that rely on the electrical properties of CNT grown with a catalytic chemical vapor deposition method at low temperature.

Gas sensor

International Nuclear Information System (INIS)

Dorogan, V.; Korotchenkov, Gh.; Vieru, T.; Prodan, I.

2003-01-01

The invention relates to the gas sensors on base of metal-oxide films (SnO, InO), which may be used for enviromental control, in the fireextinguishing systema etc. The gas includes an insulating substrate, an active layer, a resistive layer with ohmic contacts. The resistive layer has two or more regions with dofferent resistances , and on the active layer are two or more pairs of ohmic contacts

Speci﬿c contact resistance of phase change materials to metal electrode

NARCIS (Netherlands)

Roy, Deepu; in 't Zandt, Micha A.A.; Wolters, Robertus A.M.

2010-01-01

For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the speci﬿c contact resistance (Ͽc ) of doped Sb2Te and Ge2Sb2Te5 to TiW

Stability, bistability and instability of amorphous ZrO2 resistive memory devices

International Nuclear Information System (INIS)

Parreira, P; Paterson, G W; McVitie, S; MacLaren, D A

2016-01-01

Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO 2 layer. Electron energy loss spectroscopy is used to map chemical variations across the device on the nanoscale. Partial oxidation of the Ti electrode creates an ohmic contact with zirconia and injects positively charged oxygen vacancies into the zirconia layer that are then responsible for resistive switching at the Pt / zirconia interface. (paper)

CoSix contact resistance after etching and ashing plasma exposure

International Nuclear Information System (INIS)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya

2009-01-01

The authors investigated the contact resistance fluctuation caused by CoSi x damage in plasma etching and ashing processes. They found that CoSi x layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH 3 F is used instead of CF 4 during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H 2 /N 2 ashing process in which O 2 was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi x . This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Effect of surfaces similarity on contact resistance of fractal rough surfaces under cyclic loading

Science.gov (United States)

Gao, Yuanwen; Liu, Limei; Ta, Wurui; Song, Jihua

2018-03-01

Although numerous studies have shown that contact resistance depends significantly on roughness and fractal dimension, it remains elusive how they affect contact resistance between rough surfaces. The interface similarity index is first proposed to describe the similarity of the contact surfaces, which gives a good indication of the actual contact area between surfaces. We reveal that the surfaces' similarity be an origin of contact resistance variation. The cyclic loading can increase the contact stiffness, and the contact stiffness increases with the increase of the interface similarity index. These findings explain the mechanism of surface roughness and fractal dimension on contact resistance, and also provide reference for the reliability design of the electrical connection.

Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

Science.gov (United States)

Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

2014-10-07

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

Novel Sn-Based Contact Structure for GeTe Phase Change Materials.

Science.gov (United States)

Simchi, Hamed; Cooley, Kayla A; Ding, Zelong; Molina, Alex; Mohney, Suzanne E

2018-05-16

Germanium telluride (GeTe) is a phase change material (PCM) that has gained recent attention because of its incorporation as an active material for radio frequency (RF) switches, as well as memory and novel optoelectronic devices. Considering PCM-based RF switches, parasitic resistances from Ohmic contacts can be a limiting factor in device performance. Reduction of the contact resistance ( R c ) is therefore critical for reducing the on-state resistance to meet the requirements of high-frequency RF applications. To engineer the Schottky barrier between the metal contact and GeTe, Sn was tested as an interesting candidate to alter the composition of the semiconductor near its surface, potentially forming a narrow band gap (0.2 eV) SnTe or a graded alloy with SnTe in GeTe. For this purpose, a novel contact stack of Sn/Fe/Au was employed and compared to a conventional Ti/Pt/Au stack. Two different premetallization surface treatments of HCl and deionized (DI) H 2 O were employed to make a Te-rich and Ge-rich interface, respectively. Contact resistance values were extracted using the refined transfer length method. The best results were obtained with DI H 2 O for the Sn-based contacts but HCl treatment for the Ti/Pt/Au contacts. The as-deposited contacts had the R c (ρ c ) of 0.006 Ω·mm (8 × 10 -9 Ω·cm 2 ) for Sn/Fe/Au and 0.010 Ω·mm (3 × 10 -8 Ω·cm 2 ) for Ti/Pt/Au. However, the Sn/Fe/Au contacts were thermally stable, and their resistance decreased further to 0.004 Ω·mm (4 × 10 -9 Ω·cm 2 ) after annealing at 200 °C. In contrast, the contact resistance of the Ti/Pt/Au stack increased to 0.012 Ω·mm (4 × 10 -8 Ω·cm 2 ). Transmission electron microscopy was used to characterize the interfacial reactions between the metals and GeTe. It was found that formation of SnTe at the interface, in addition to Fe diffusion (doping) into GeTe, is likely responsible for the superior performance of Sn/Fe/Au contacts, resulting in one of the lowest reported

The Effect of Tensile Hysteresis and Contact Resistance on the Performance of Strain-Resistant Elastic-Conductive Webbing

Directory of Open Access Journals (Sweden)

Tien-Wei Shyr

2011-01-01

Full Text Available To use e-textiles as a strain-resistance sensor they need to be both elastic and conductive. Three kinds of elastic-conductive webbings, including flat, tubular, and belt webbings, made of Lycra fiber and carbon coated polyamide fiber, were used in this study. The strain-resistance properties of the webbings were evaluated in stretch-recovery tests and measured within 30% strain. It was found that tensile hysteresis and contact resistance significantly influence the tensile elasticity and the resistance sensitivity of the webbings. The results showed that the webbing structure definitely contributes to the tensile hysteresis and contact resistance. The smaller the friction is among the yarns in the belt webbing, the smaller the tensile hysteresis loss. However the close proximity of the conductive yarns in flat and tubular webbings results in a lower contact resistance.

Study of the Contact Resistance of Interlaced Stainless Steel Yarns Embedded in Hybrid Woven Fabrics

Directory of Open Access Journals (Sweden)

Vasile Simona

2017-06-01

Full Text Available The contact resistance of two interlacing electro-conductive yarns embedded in a hybrid woven fabric will constitute a problem for electro-conductive textiles under certain circumstances. A high contact resistance can induce hotspots, while a variable contact resistance may cause malfunctioning of the components that are interconnected by the electro-conductive yarns. Moreover, the contact robustness should be preserved over time and various treatments such as washing or abrading should not alter the functioning of the electro-conductive textiles. The electrical resistance developed in the contact point of two interlacing electro-conductive yarns is the result of various factors. The influence of diameter of the electro-conductive stainless steel yarns, the weave pattern, the weft density, and the abrasion on the contact resistance was investigated. Hybrid polyester fabrics were produced according to the design of experiments (DoE and statistical models were found that describe the variation of the contact resistance with the selected input parameters. It was concluded that the diameter of the stainless steel warp and weft yarns has a statistically significant influence on the contact resistance regardless of the weave. Weft density had a significant influence on the contact resistance but only in case of the twill fabrics. Abrasion led to an increase in contact resistance regardless of the weave pattern and the type of stainless steel yarn that was used. Finally, a combination of parameters that leads to plain and twill fabrics with low contact resistance and robust contacts is recommended.

Ohmic Heating: An Emerging Concept in Organic Synthesis.

Science.gov (United States)

Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

2017-06-12

The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Calculation of Equivalent Resistance for Ground Wires Twined with Armor Rods in Contact Terminals

Directory of Open Access Journals (Sweden)

Gang Liu

2018-03-01

Full Text Available Ground wire breakage accidents can destroy the stable operation of overhead lines. The excessive temperature increase arising from the contact resistance between the ground wire and armor rod in the contact terminal is one of the main reasons causing the breakage of ground wires. Therefore, it is necessary to calculate the equivalent resistance for ground wires twined with armor rods in contact terminals. According to the actual distribution characteristics of the contact points in the contact terminal, a three-dimensional electromagnetic field simulation model of the contact terminal was established. Based on the model, the current distribution in the contact terminal was obtained. Subsequently, the equivalent resistance of a ground wire twined with the armor rod in the contact terminal was calculated. The effects of the factors influencing the equivalent resistance were also discussed. The corresponding verification experiments were conducted on a real ground wire on a contact terminal. The measurement results of the equivalent resistance for the armor rod segment showed good agreement with the electromagnetic modeling results.

Statistical analyses of local transport coefficients in Ohmic ASDEX discharges

International Nuclear Information System (INIS)

Simmet, E.; Stroth, U.; Wagner, F.; Fahrbach, H.U.; Herrmann, W.; Kardaun, O.J.W.F.; Mayer, H.M.

1991-01-01

Tokamak energy transport is still an unsolved problem. Many theoretical models have been developed, which try to explain the anomalous high energy-transport coefficients. Up to now these models have been applied to global plasma parameters. A comparison of transport coefficients with global confinement time is only conclusive if the transport is dominated by one process across the plasma diameter. This, however, is not the case in most Ohmic confinement regimes, where at least three different transport mechanisms play an important role. Sawtooth activity leads to an increase in energy transport in the plasma centre. In the intermediate region turbulent transport is expected. Candidates here are drift waves and resistive fluid turbulences. At the edge, ballooning modes or rippling modes could dominate the transport. For the intermediate region, one can deduce theoretical scaling laws for τ E from turbulent theories. Predicted scalings reproduce the experimentally found density dependence of τ E in the linear Ohmic confinement regime (LOC) and the saturated regime (SOC), but they do not show the correct dependence on the isotope mass. The relevance of these transport theories can only be tested in comparing them to experimental local transport coefficients. To this purpose we have performed transport calculations on more than a hundred Ohmic ASDEX discharges. By Principal Component Analysis we determine the dimensionless components which dominate the transport coefficients and we compare the results to the predictions of various theories. (author) 6 refs., 2 figs., 1 tab

Energy Confinement of both Ohmic and LHW Plasma on EAST

International Nuclear Information System (INIS)

Yang Yao; Gao Xiang

2011-01-01

Study on the characters of energy confinement in both Ohmic and lower hybrid wave (LHW) discharges on EAST is conducted and the linear Ohmic confinement (LOC), saturated ohmic confinement (SOC) and improved Ohmic confinement (IOC) regimes are investigated in this paper. It is observed that an improved confinement mode characterized by both a drop of D α line intensity and an increase in line average density can be triggered by a gas puffing pulse. (magnetically confined plasma)

Rugged Low-Resistance Contacts To High-Tc Superconductors

Science.gov (United States)

Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

1992-01-01

Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

Combined effects of fretting and pollutant particles on the contact resistance of the electrical connectors

Directory of Open Access Journals (Sweden)

Zhigang Kong

2017-06-01

Full Text Available Usually, when electrical connectors operate in vibration environments, fretting will be produced at the contact interfaces. In addition, serious environmental pollution particles will affect contact resistance of the connectors. The fretting will worsen the reliability of connectors with the pollutant particles. The combined effects of fretting and quartz particles on the contact resistance of the gold plating connectors are studied with a fretting test system. The results show that the frequencies have obvious effect on the contact resistance. The higher the frequency, the higher the contact resistance is. The quartz particles cause serious wear of gold plating, which make the nickel and copper layer exposed quickly to increase the contact resistance. Especially in high humidity environments, water supply certain adhesion function and make quartz particles easy to insert or cover the contact surfaces, and even cause opening resistance.

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu; Yeh, Ping-Hung; Lu, Shih-Yuan; Wang, Zhong Lin

2009-01-01

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Gigantic Enhancement in Sensitivity Using Schottky Contacted Nanowire Nanosensor

KAUST Repository

Wei, Te-Yu

2009-12-09

A new single nanowire based nanosensor is demonstrated for illustrating its ultrahigh sensitivity for gas sensing. The device is composed of a single ZnO nanowire mounted on Pt electrodes with one end in Ohmic contact and the other end in Schottky contact. The Schottky contact functions as a "gate" that controls the current flowing through the entire system. By tuning the Schottky barrier height through the responsive variation of the surface chemisorbed gases and the amplification role played by the nanowire to Schottky barrier effect, an ultrahigh sensitivity of 32 000% was achieved using the Schottky contacted device operated in reverse bias mode at 275 °C for detection of 400 ppm CO, which is 4 orders of magnitude higher than that obtained using an Ohmic contact device under the same conditions. In addition, the response time and reset time have been shortened by a factor of 7. The methodology and principle illustrated in the paper present a new sensing mechanism that can be readily and extensively applied to other gas sensing systems. © 2009 American Chemical Society.

Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

Energy Technology Data Exchange (ETDEWEB)

Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

2013-05-15

In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

Empirical scaling for present ohmic heated tokamaks

International Nuclear Information System (INIS)

Daughney, C.

1975-06-01

Empirical scaling laws are given for the average electron temperature and electron energy confinement time as functions of plasma current, average electron density, effective ion charge, toroidal magnetic field, and major and minor plasma radius. The ohmic heating is classical, and the electron energy transport is anomalous. The present scaling indicates that ohmic-heating becomes ineffective with larger experiments. (U.S.)

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

Science.gov (United States)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Neoclassical MHD equilibria with ohmic current

International Nuclear Information System (INIS)

Tokuda, Shinji; Takeda, Tatsuoki; Okamoto, Masao.

1989-01-01

MHD equilibria of tokamak plasmas with neoclassical current effects (neoclassical conductivity and bootstrap current) were calculated self-consistently. Neoclassical effects on JFT-2M tokamak plasmas, sustained by ohmic currents, were studied. Bootstrap currents flow little for L-mode type equilibria because of low attainable values of poloidal beta, β J . H-mode type equilibria give bootstrap currents of 30% ohmic currents for β J attained by JFT-2M and 100% for β J ≥ 1.5, both of which are sufficient to change the current profiles and the resultant MHD equilibria. Neoclassical conductivity which has roughly half value of the classical Spitzer conductivity brings peaked ohmic current profiles to yield low safety factor at the magnetic axis. Neoclassical conductivity reduces the value of effective Z(Z eff ) which is necessary to give the observed one-turn voltage but it needs impurities accumulating at the center when such peaked current profiles are not observed. (author)

Increased resistance of contact lens related bacterial biofilms to antimicrobial activity of soft contact lens care solutions

Science.gov (United States)

Szczotka-Flynn, Loretta B.; Imamura, Yoshifumi; Chandra, Jyotsna; Yu, Changping; Mukherjee, Pranab K.; Pearlman, Eric; Ghannoum, Mahmoud A.

2014-01-01

PURPOSE To determine if clinical and reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus form biofilms on silicone hydrogel contact lenses, and ascertain antimicrobial activities of contact lens care solutions. METHODS Clinical and American Type Culture Collection (ATCC) reference strains of Pseudomonas aeruginosa, Serratia marcescens, and Staphylococcus aureus were incubated with lotrafilcon A lenses under conditions that facilitate biofilm formation. Biofilms were quantified by quantitative culturing (colony forming units, CFUs), and gross morphology and architecture were evaluated using scanning electron microscopy (SEM) and confocal microscopy. Susceptibilities of the planktonic and biofilm growth phases of the bacteria to five common multipurpose contact lens care solutions and one hydrogen peroxide care solution were assessed. RESULTS P. aeruginosa, S. marcescens, and S. aureus reference and clinical strains formed biofilms on lotrafilcon A silicone hydrogel contact lenses, as dense networks of cells arranged in multiple layers with visible extracellular matrix. The biofilms were resistant to commonly used biguanide preserved multipurpose care solutions. P. aeruginosa and S. aureus biofilms were susceptible to a hydrogen peroxide and a polyquaternium preserved care solution, whereas S. marcescens biofilm was resistant to a polyquaternium preserved care solution but susceptible to hydrogen peroxide disinfection. In contrast, the planktonic forms were always susceptible. CONCLUSIONS P. aeruginosa, S. marcescens, and S. aureus form biofilms on lotrafilcon A contact lenses, which in contrast to planktonic cells, are resistant to the antimicrobial activity of several soft contact lens care products. PMID:19654521

Direct high-temperature ohmic heating of metals as liquid pipes.

Science.gov (United States)

Grosse, A V; Cahill, J A; Liddell, W L; Murphy, W J; Stokes, C S

1968-05-03

When a sufficiently high electric current is passed through a liquid metal, the electromagnetic pressure pinches off the liquid metal and interrupts the flow of current. For the first time the pinch effect has been overcome by use of centrifugal acceleration. By rotation of a pipe of liquid metal, tin or bismuth or their alloys, at sufficiently high speed, it can be heated electrically without intermission of the electric current. One may now heat liquid metallic substances, by resistive (ohmic) heating, to 5000 degrees K and perhaps higher temperatures.

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

Directory of Open Access Journals (Sweden)

Chong-Chong Dai

2014-04-01

Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

Fluorinated tin oxide back contact for AZTSSe photovoltaic devices

Energy Technology Data Exchange (ETDEWEB)

Gershon, Talia S.; Gunawan, Oki; Haight, Richard A.; Lee, Yun Seog

2017-03-28

A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.

2013-10-22

In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.

Experimental determination of fuel-cladding thermal contact resistance

International Nuclear Information System (INIS)

Maglic, K.; Zivotic, Z.

1968-01-01

Thermal resistance of the UO 2 fuel - Zr-2 cladding was measure by the same experimental apparatus which was used for measuring the thermal conductivity of ceramic fuel. Thermal resistance was measure for a series of heat flux values and the dependence of thermal resistance on the flux is given within in the range from 0.66 W/cm 2 to 13.3 W/cm 2 . The temperature drop on the contact surface was between 39 deg C and 181.7 deg C, proportional to the increase of the heat flux [sr

Ohm's law revision

OpenAIRE

Cheremisin, M. V.

1999-01-01

The standard ohmic measurements by means of two extra leads contain an additional thermal correction to resistance. The current results in heating(cooling) at first(second) sample contact due to Peltier effect. The contacts temperatures are different. The measured voltage is the sum of the ohmic voltage swing and Peltier effect induced thermopower which is linear on current. As a result, the thermal correction to resistance measured exists at $I\\to 0$. The correction should be in comparison w...

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

Science.gov (United States)

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Investigating the effect of silicon surface chemical treatment on Al/Si contact properties in GaP/Si solar cells

Science.gov (United States)

Kudryashov, D.; Gudovskikh, A.

2018-03-01

In the present work, experimental studies have been carried out to reveal how chemical treatment of a silicon surface affects the properties of the Al/Si contact. It has been shown that for p-type monocrystalline silicon substrates with a resistivity of 10 ohm cm, it is possible to form an ohmic Al/Si contact by magnetron sputtering of an aluminum thin film and its further annealing at temperatures of 400 - 450 °C. In the range of annealing temperatures of 250 - 400 °C, the Si substrate treatment in the HF solution leads to a significant increase in currents on the current-voltage curves of the Al/Si contact, while in the range of 450 - 700 °C, the effect of chemical treatment of the silicon is not detected.

Structural analysis of equilibrium and ohmic heating coil assemblies for the TFTR

International Nuclear Information System (INIS)

Chattopadhyay, S.

1975-10-01

The structural adequacy of the equilibrium and ohmic heating coils and their support systems for the TFTR device has been investigated. The capability of the coils to span ribs of the support structure has been established. The support structure has been found to be effective in resisting the magnetic forces in the coils. The bands encircling the outboard coils and the band tensioning devices have been found to perform adequately. The analysis is based on October 1975 conceptual design

Current voltage characteristics of composite superconductors with high contact resistance

International Nuclear Information System (INIS)

Akhmetov, A.A.; Baev, V.P.

1984-01-01

An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo

2016-12-28

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

Energy confinement in Ohmic H-mode in TUMAN-3M

International Nuclear Information System (INIS)

Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

1997-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

Investigation into Contact Resistance And Damage of Metal Contacts Used in RF-MEMS Switches

Science.gov (United States)

2009-09-01

mechanically cycled by a piezo - electric transducer (PZT). The resistance through the simulated switch was measured using a four-wire measurement technique...determined that the microwave performance of a closed relay can be modeled as a simple resistor to a first order equivalent [106,108]. The relay resistance is...Therefore, a piezo device capable of precise higher frequency motion was chosen to provide cyclic contact motion. This device needed to be physically small

CoSi{sub x} contact resistance after etching and ashing plasma exposure

Energy Technology Data Exchange (ETDEWEB)

Katahira, Ken; Fukasawa, Masanaga; Kobayashi, Shoji; Takizawa, Toshifumi; Isobe, Michio; Hamaguchi, Satoshi; Nagahata, Kazunori; Tatsumi, Tetsuya [Nagasaki Production Division 1, Sony Semiconductor Kyushu Corporation, 1883-43 Tsukuba-machi, Isahaya-shi, Nagasaki 854-0065 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan); Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Semiconductor Technology Development Division, Semiconductor Business Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014 (Japan)

2009-07-15

The authors investigated the contact resistance fluctuation caused by CoSi{sub x} damage in plasma etching and ashing processes. They found that CoSi{sub x} layers damaged by plasma process exposure are readily oxidized when exposed to air resulting in increased resistance. They also found that the contact resistance increases more when CH{sub 3}F is used instead of CF{sub 4} during etching process. The lower the mass number of dominant ions becomes, the deeper the ions penetrate. Molecular dynamics simulation revealed that dissociated species from lighter ions penetrate deeper and that this stimulates deeper oxidation. They also found that contact resistance further increased by using postetch ashing plasma even in an H{sub 2}/N{sub 2} ashing process in which O{sub 2} was not used. Here, too, the reason for this is that the ion penetration causes deep oxidation. They observed that the contact resistance has a linear relationship with the oxide concentration in CoSi{sub x}. This leads to the conclusion that it is essential to precisely control the ion energy as well as to properly select the ion species in the plasma process in the fabrication of next-generation semiconductor devices.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

2016-01-01

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

The role of contacts in semiconductor gamma radiation detectors

International Nuclear Information System (INIS)

Lachish, U.

1998-01-01

It is proposed that the operation of semiconductor gamma radiation detectors, equipped with ohmic contacts, which allow free electron flow between the contacts and bulk material, will not be sensitive to low hole mobility, hole collection efficiency, or hole trapping. Such fast-operating detectors may be readily integrated into monolithic arrays. The detection mechanism and various material aspects are discussed and compared to those of blocking contact detectors. Some suggestions for detector realization are presented. (orig.)

Technology, applications and modelling of ohmic heating: a review.

Science.gov (United States)

Varghese, K Shiby; Pandey, M C; Radhakrishna, K; Bawa, A S

2014-10-01

Ohmic heating or Joule heating has immense potential for achieving rapid and uniform heating in foods, providing microbiologically safe and high quality foods. This review discusses the technology behind ohmic heating, the current applications and thermal modeling of the process. The success of ohmic heating depends on the rate of heat generation in the system, the electrical conductivity of the food, electrical field strength, residence time and the method by which the food flows through the system. Ohmic heating is appropriate for processing of particulate and protein rich foods. A vast amount of work is still necessary to understand food properties in order to refine system design and maximize performance of this technology in the field of packaged foods and space food product development. Various economic studies will also play an important role in understanding the overall cost and viability of commercial application of this technology in food processing. Some of the demerits of the technology are also discussed.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.; Bullock, James; Jeangros, Quentin; Samundsett, Christian; Wan, Yimao; Cui, Jie; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Javey, Ali; Cuevas, Andres

2017-01-01

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

A Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells

KAUST Repository

Allen, Thomas G.

2017-02-04

Recent advances in the efficiency of crystalline silicon (c-Si) solar cells have come through the implementation of passivated contacts that simultaneously reduce recombination and resistive losses within the contact structure. In this contribution, low resistivity passivated contacts are demonstrated based on reduced titania (TiOx) contacted with the low work function metal, calcium (Ca). By using Ca as the overlying metal in the contact structure we are able to achieve a reduction in the contact resistivity of TiOx passivated contacts of up to two orders of magnitude compared to previously reported data on Al/TiOx contacts, allowing for the application of the Ca/TiOx contact to n-type c-Si solar cells with partial rear contacts. Implementing this contact structure on the cell level results in a power conversion efficiency of 21.8% where the Ca/TiOx contact comprises only ≈6% of the rear surface of the solar cell, an increase of 1.5% absolute compared to a similar device fabricated without the TiOx interlayer.

Ohmic ITBs in Alcator C-Mod

Science.gov (United States)

Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

2007-11-01

Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

Start-up of the ohmic phase in JET

International Nuclear Information System (INIS)

Tanga, A.; Christiansen, J.P.; Cordey, J.G.; Ejima, S.; Kellman, A.; Lazzaro, E.; Lomas, P.J.; Thomas, P.R.

1985-01-01

JET has been designed to permit the study of plasmas in which alphaparticle heating is a significant part of the power balance. In order to have a sufficient thermonuclear yield and to trap the resulting alphaparticles, JET is similar in its dimensions and plasma current to the next generation of reactor-like devices such as NET, FER and INTOR. For this reason, the authors see the results from the study of the start-up of ohmically heated plasmas in JET as highly relevant. Discussed is the range that has been achieved in all major parameters with ohmic heating. Experiences with the wall conditioning technique and the results of ion cyclotron heating experiments in JET are outlined. This paper also describes the stages of plasma formation, current rise and ohmic flat-top

Dynamical determination of ohmic states of a cylindrical pinch

International Nuclear Information System (INIS)

Schnack, D.D.

1980-04-01

The dual problems of generation and sustainment of the reversed axial field are studied. It is shown that, if a cylindrical plasma is initially in an axisymmetric state with a sufficient degree of paramagnetism, field reversal can be attained by mode activity of a single helicity. The initial paramagnetism may be due to the method of pinch formation, as in fast experiments, or to a gradual altering of the pitch profile resulting from a succession of instabilities. Furthermore, if the total current is kept constant and energy loss and resistivity profiles are included in an ad hoc manner, one finds that the final steady state of the helical instability can be maintained for long times against resistive diffusion without the need for further unstable activity. These states, which possess zero order flow and possibly reversed axial field, represent steady equilibria which simultaneously satisfy force balance and Ohm's law, and are termed Ohmic states

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Simplistic graphene transfer process and its impact on contact resistance

KAUST Repository

Ghoneim, Mohamed T.

2013-05-09

Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene\\'s most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.

Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

International Nuclear Information System (INIS)

Raghavan, A.; DebRoy, T.; Palmer, T. A.

2014-01-01

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO 2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

Period doubling in a model of magnetoconvection with Ohmic heating

International Nuclear Information System (INIS)

Osman, M. B. H.

2000-01-01

In this work it has been studied an idealized model of rotating nonlinear magneto convection to investigate the effects of Ohmic heating. In the over stable region it was found that Ohmic heating can lead to a period-doubling sequence

Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

Science.gov (United States)

Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

2010-10-01

Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (pHTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (pHTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Simulation of core turbulence measurement in Tore Supra ohmic regimes

NARCIS (Netherlands)

Hacquin, S.; Citrin, J.; Arnichand, H.; Sabot, R.; Bourdelle, C.; Garbet, X.; Kramer-Flecken, A.; Tore Supra team,

2016-01-01

This paper reports on a simulation of reflectometry measurement in Tore Supra ohmic discharges, for which the experimental observations as well as gyrokinetic non-linear computations predict a modification of turbulence spectrum between the linear (LOC) and the saturated ohmic confinement (SOC)

Developing and modelling of ohmic heating for solid food products

DEFF Research Database (Denmark)

Feyissa, Aberham Hailu; Frosch, Stina

Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...... such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been...

Improved Pt/Au and W/Pt/Au Schottky contacts on n-type ZnO using ozone cleaning

International Nuclear Information System (INIS)

Ip, K.; Gila, B.P.; Onstine, A.H.; Lambers, E.S.; Heo, Y.W.; Baik, K.H.; Norton, D.P.; Pearton, S.J.; Kim, S.; LaRoche, J.R; Ren, F.

2004-01-01

UV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve their rectifying characteristics. Pt contacts deposited directly on the as-received ZnO surface are Ohmic but show rectifying behavior with ozone cleaning. The Schottky barrier height of these Pt contacts was 0.70 eV, with ideality factor of 1.5 and a saturation current density of 6.2x10 -6 A cm -2 . In contrast, the as-deposited W contacts are Ohmic, independent of the use of ozone cleaning. Postdeposition annealing at 700 deg. C produces rectifying behavior with Schottky barrier heights of 0.45 eV for control samples and 0.49 eV for those cleaned with ozone exposure. The improvement in rectifying properties of both the Pt and W contacts is related to removal of surface carbon contamination from the ZnO

Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation method

International Nuclear Information System (INIS)

Yagi, Iwao; Tsukagoshi, Kazuhito; Aoyagi, Yoshinobu

2004-01-01

We established a dry-etching patterning process for the channel formation of pentacene thin-film transistor, and fabricated a four-terminal device equipped with a gate electrode. The four-terminal device enabled us to divide two-terminal source-drain resistance into two components of contact resistance and pentacene channel resistance. We obtained direct evidence of a gate-voltagedependent contact resistance change: the gate-induced charge significantly reduced the contact resistance and increased source-drain current. Furthermore, the temperature dependence of the device clearly indicated that the contact resistance was much higher than the channel resistance and was dominated in the two-terminal total resistance of the device below 120 K. An observed activation energy of 80 meV for contact resistance was higher than that of 42 meV for pentacene channel resistance

Investigations of niobium carbide contact for carbon-nanotube-based devices

International Nuclear Information System (INIS)

Huang, L; Chor, E F; Wu, Y; Guo, Z

2010-01-01

Single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with Nb contacts have been fabricated and upon annealing in vacuum at 700 deg. C for 1 h, niobium carbide (Nb 2 C) is formed at the Nb/SWCNT interface. The Nb 2 C/SWCNT contacts demonstrate a very small Schottky barrier height of ∼ 18 meV (decreased by > 80% relative to that of pristine Nb/SWCNT contact of ∼ 98 meV) to p-type transport. This is attributed to the higher work function of Nb 2 C (∼5.2 eV) than Nb (∼4.3 eV) and better bonding between Nb 2 C and SWCNTs. The performance of Nb 2 C-contacted SWCNT FETs is as follows: the p-channel ON current is as high as 0.5 μA at V DS = 0.1 V, the I ON /I OFF ratio is up to ∼ 10 5 and the subthreshold slope is ∼ 550 mV/dec, which is as good as that of titanium carbide (TiC-) and Pd-contacted SWCNT FETs. Compared with TiC, Nb 2 C contacts yield more unipolar p-type SWCNT FETs, as a result of the Nb 2 Cs higher work function. More importantly, Nb 2 C contacts can form near-ohmic contacts to both large-(≥1.6 nm) and small-diameter (∼1 nm) SWCNTs, while Pd can only form near-ohmic contacts for large-diameter SWCNTs. Moreover, the Nb 2 C contacts demonstrate good stability in air.

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly due to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. An experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Ohmic Heating System for the TFTR Tokamak

International Nuclear Information System (INIS)

Petree, F.; Cassel, R.

1977-01-01

The TFTR Ohmic Heating (OH) System will apply 140,000 volt impulses upon the OH coils to start the plasma. In order to reduce the voltage stress to ground on the OH coils to 12 kV without changing the magnetic field induced by the OH system in the plasma, six d-c current interrupters will be applied to six entry points in the OH coil system. And in order to impart a nearly rectangular shape to these impulses, the voltage determining elements will be nonlinear resistances placed in parallel with the interrupters. These nonlinear resistors, made of semiconducting material, are not normally used in repetitive or continuous duty, and their proper functioning is crucial to the reliable operation of the system. The system described herein, is being revised owing to the impact of revisions to the Toroidal Field Coil System, and to refinements to the OH System design

Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy

Science.gov (United States)

Chen-Fei, Wu; Yun-Feng, Chen; Hai, Lu; Xiao-Ming, Huang; Fang-Fang, Ren; Dun-Jun, Chen; Rong, Zhang; You-Dou, Zheng

2016-05-01

In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain (S/D) series resistance in operating amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metal-semiconductor junction. Project supported by the Key Industrial R&D Program of Jiangsu Province, China (Grant No. BE2015155), the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China, and the Fundamental Research Funds for the Central Universities, China (Grant No. 021014380033).

Effects of contact resistance on electrical conductivity measurements of SiC-based materials

Energy Technology Data Exchange (ETDEWEB)

Youngblood, G.E.; Thomsen, E.C.; Henager, C.H., E-mail: chuck.henager@pnnl.gov

2013-11-15

A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (R{sub c}) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ∼973 K. The R{sub c}-values behaved similarly for each type of metallic electrode: R{sub c} > ∼1000 Ω cm{sup 2} at RT, decreasing continuously to ∼1–10 Ω cm{sup 2} at 973 K. The temperature dependence of the inverse R{sub c} indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ∼0.3 eV. For the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

A micro-scale model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Zhou, Y.; Lin, G.; Shih, A.J.; Hu, S.J. [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2007-01-01

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) in a proton exchange membrane (PEM) fuel cell constitutes a significant portion of the overall fuel cell electrical resistance under the normal operation conditions. Most current methods for contact resistance estimation are experimental and there is a lack of well developed theoretical methods. A micro-scale numerical model is developed to predict the electrical contact resistance between BPP and GDL by simulating the BPP surface topology and GDL structure and numerically determining the status for each contact spot. The total resistance and pressure are obtained by considering all contact spots as resistances in parallel and summing the results together. This model shows good agreements with experimental results. Influences of BPP surface roughness parameters on contact resistance are also studied. This model is beneficial in understanding the contact behavior between BPP and GDL and can be integrated with other fuel cell simulations to predict the overall performance of PEM fuel cells. (author)

Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

KAUST Repository

Black, J. P.; Breward, C. J. W.; Howell, P. D.; Young, R. J. S.

2013-01-01

across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin

2018-05-15

We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.

Computational studies of ohmic heating in the spheromak

International Nuclear Information System (INIS)

Olson, R.E.

1983-01-01

Time-dependent computational simulations using both single-fluid O-D and two-fluid 1 1/2-D models are developed for and utilized in an investigation of the ohmic heating of a spheromak plasma. The plasma density and composition, the applied magnetic field strength, the plasma size, and the plasma current density profile are considered for their effects on the spheromak heating rate and maximum achievable temperature. The feasibility of ohmic ignition of a reactor-size spheromak plasma is also contemplated

Photothermal radiometry applied to characterization and control of thermal contact resistance of crimped metals; Radiometrie photothermique appliquee a la caracterisation et au controle de la resistance thermique de contact de metaux sertis

Energy Technology Data Exchange (ETDEWEB)

Van Schel, Etienne

1989-11-15

Modulated photothermal radiometry is used to study the thermal contact between two metals. At first, two models using a bidimensional axisymmetric geometry are proposed to describe the interface: the first one deals with thermal contact resistance, the second one with an equivalent layer. A thorough calculation of the photothermal signal taking into account the nature of the sample and the detection is here presented. Theoretical simulations show the influence of several parameters (frequency. dimensions of the excitation and the detection) on the sensitivity of the method applied to the detection of the thermal resistance. The comparison, with a three layer-model justifies the use of thermal resistance in periodical regime, for air layers between metals. Then, we present an experimental device that is used to validate the model. The results, obtained on duralumin-copper samples, show the sensitivity of the method and lead us to propose values of thermal contact resistance for different crimpings. At last an industrial testing equipment is described. The results, obtained on laboratory samples, are confirmed. Heat exchanger pipes, including voluntary defects are tested. Thanks to this device, we are able to make an in situ crimping control that can also be applied to other types of contacts. [French] La radiometrie photothermique est utilisee pour etudier le contact thermique entre deux metaux. Tout d'abord, deux modeles utilisant une geometrie bidimensionnelle axisymetrique sont proposes pour decrire l'interface: le premier utilise une resistance thermique de contact, le second un milieu equivalent Un calcul complet du signal photothermique, prenant en compte la nature de l'echantillon et de la detection, est presente. Des simulations theoriques montrent l'influence de quelques parametres (frequence, dimensions de l'excitation et de la detection) sur la sensibilite de la methode a la detection de la resistance thermique. La comparaison, avec un modele a trois

Contact Modelling in Resistance Welding, Part II: Experimental Validation

DEFF Research Database (Denmark)

Song, Quanfeng; Zhang, Wenqi; Bay, Niels

2006-01-01

Contact algorithms in resistance welding presented in the previous paper are experimentally validated in the present paper. In order to verify the mechanical contact algorithm, two types of experiments, i.e. sandwich upsetting of circular, cylindrical specimens and compression tests of discs...... with a solid ring projection towards a flat ring, are carried out at room temperature. The complete algorithm, involving not only the mechanical model but also the thermal and electrical models, is validated by projection welding experiments. The experimental results are in satisfactory agreement...

Thermal contact resistance of a particle on a substrate

International Nuclear Information System (INIS)

Tan, J.; Safa, H.; Bonin, B.

1996-01-01

It has been formerly established that field emission in RF cavities is mainly die to contamination by small micron size particles lying on the surface. When applying the RF field, these particles can melt and stick to the surface making it harder to get rid of them. In order to understand the thermal process involved, a crucial physical quantity is needed: the thermal contact resistance between the particle and the substrate. In the present paper, an experimental method is described to measure this quantity, with the use of a scanning electron microscope. By defocusing the beam of the SEM, one can get enough power deposited in one particle to melt it. The power level at which the particle melts gives the thermal contact resistance. Therefore, using the measured value, thermal calculations yield some hints for understanding the violent thermal processes observed in RF fields. (author)

Ohmic H-mode studies in TUMAN-3

International Nuclear Information System (INIS)

Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

1994-01-01

The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

A Feasibility Study on the Worn Area Estimation by Measuring a Contact Resistance (I)

International Nuclear Information System (INIS)

Lee, Young-Ho; Kim, Hyung-Kyu

2007-01-01

In order to improve the fretting wear resistance of the nuclear fuel rod with considering the effect of the contacting spring shape, it is necessary to examine the formation procedure of the worn area during the fretting wear experiments with including its shape, size and the debris removal path. This is because the wear volume and the maximum wear depth are dominantly affected by the worn area and the wear resistance of the nuclear fuel rod was dominantly affected by the spring shape rather than the test environment and the contact mode (i.e. impact, sliding, rubbing, etc.). Unfortunately, it is almost impossible to archive the size and shape of the worn area on real-time basis because the contact surfaces are always hidden. If we could measure the worn area properties during fretting wear tests, it enables us to promptly estimate the wear resistance or behavior with various contacting spring shapes. Generally, fretting wear degradation is generated by the localized plastic deformation, fracture and finally detachment of wear debris. Generally, wear debris easily oxidized by frictional heat, test environment, etc. From the previous studies, most of the wear debris was detached from the worn surface in the distilled water condition while the wear debris in the dry condition remained on or adhered to the worn surface. At this time, it is reasonable that the accumulated wear debris on the worn surface is existed in the form of oxide. If small amount of electric current was applied between the contacting surfaces, wear debris could be an obstacle to flow the electric current. This means that the variation of the contact resistance under constant electric current during the fretting wear tests has much information on the formation of the worn area even though the applying current could accelerate the oxidation of the generated wear debris. So, in this study, fretting wear tests have been performed with applying an electric current in room temperature air in order to

Transmission of methicillin-resistant Staphylococcus aureus to household contacts

NARCIS (Netherlands)

F.P.N. Mollema (Femke); J.H. Richardus (Jan Hendrik); M.D. Behrendt (Myra); N. Vaessen (Norbert); W. Lodder; W. Hendriks; H.A. Verbrugh (Henri); A. Voss (Andreas)

2010-01-01

textabstractThe frequency of and risk factors for methicillin-resistant Staphylococcus aureus (MRSA) transmission from a MRSA index person to household contacts were assessed in this prospective study. Between January 2005 and December 2007, 62 newly diagnosed MRSA index persons (46 patients and 16

Effect of air confinement on thermal contact resistance in nanoscale heat transfer

Science.gov (United States)

Pratap, Dheeraj; Islam, Rakibul; Al-Alam, Patricia; Randrianalisoa, Jaona; Trannoy, Nathalie

2018-03-01

Here, we report a detailed analysis of thermal contact resistance (R c) of nano-size contact formed between a Wollaston wire thermal probe and the used samples (fused silica and titanium) as a function of air pressure (from 1 Pa to 105 Pa). Moreover, we suggest an analytical model using experimental data to extract R c. We found that for both samples, the thermal contact resistance decreases with increasing air pressure. We also showed that R c strongly depends on the thermal conductivity of materials keeping other parameters the same, such as roughness of the probe and samples, as well as the contact force. We provide a physical explanation of the R c trend with pressure and thermal conductivity of the materials: R c is ascribed to the heat transfer through solid-solid (probe-sample) contact and confined air at nanoscale cavities, due to the rough nature of the materials in contact. The contribution of confined air on heat transfer through the probe sample contact is significant at atmospheric pressure but decreases as the pressure decreases. In vacuum, only the solid-solid contact contributes to R c. In addition, theoretical calculations using the well-known acoustic and diffuse mismatch models showed a high thermal conductivity material that exhibits high heat transmission and consequently low R c, supporting our findings.

Analysis of a global energy confinement database for JET ohmic plasmas

International Nuclear Information System (INIS)

Bracco, G.; Thomsen, K.

1997-01-01

A database containing global energy confinement data for JET ohmic plasmas in the campaigns from 1984 to 1992 has been established. An analysis is presented of this database and the results are compared with data from other tokamaks, such as the Axially Symmetric Divertor Experiment (ASDEX), Frascati Tokamak Upgrade (FTU) and Tore Supra. The trends of JET ohmic confinement appear to be similar to those observed on other tokamaks: a linear dependence of the global energy confinement time on density is observed up to a density value where a saturation is attained; this density value defines the border between the linear and the saturated ohmic confinement regimes; this border is shifted towards higher density values if the q value of the discharge is decreased; the global confinement time in the saturated ohmic regime increases less than linearly with the value of the magnetic field. (author). 20 refs, 13 figs, 4 tabs

Evaluation of Blast Resistance of Fiber Reinforced Composite Specimens under Contact Blast Load

Science.gov (United States)

Janota, O.; Foglar, M.

2017-09-01

This paper presents results of experimental programme which took place in 2014, 2015 and 2016. Experiments were focused on the resistance of full scale concrete panels subjected to contact blast loading. Specimens were loaded by contact blast by plastic explosive. All specimens were reinforced concrete slabs made of fiber concrete. Basalt mesh and textile sheets were added to some of the experiments for creating more heterogeneous material to achieve better resistance of the specimens. Evaluation of experiments was mainly focused on the damaged area on the contact side and soffit of the specimens. Dependency of the final damage of concrete panels on the weight of explosive and concrete strength was assessed.

Ohmic ignition of Neo-Alcator tokamak with adiabatic compression

International Nuclear Information System (INIS)

Inoue, Nobuyuki; Ogawa, Yuichi

1992-01-01

Ohmic ignition condition on axis of the DT tokamak plasma heated by minor radius and major radius adiabatic compression is studied assuming parabolic profiles for plasma parameters, elliptic plasma cross section, and Neo-Alcator confinement scaling. It is noticeable that magnetic compression reduces the necessary total plasma current for Ohmic ignition device. Typically in compact ignition tokamak of the minor radius of 0.47 m, major radius of 1.5 m and on-axis toroidal field of 20 T, the plasma current of 6.8 MA is sufficient for compression plasma, while that of 11.7 MA is for no compression plasma. Another example with larger major radius is also described. In such a device the large flux swing of Ohmic transformer is available for long burn. Application of magnetic compression saves the flux swing and thereby extends the burn time. (author)

Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

Science.gov (United States)

Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

2017-07-01

Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

Energy confinement comparison of ohmically heated stellarators to tokamaks

International Nuclear Information System (INIS)

Chu, T.K.; Lee, Y.C.

1979-12-01

An empirical scaling prescribes that the energy confinement time in ohmically heated stellarators and tokamaks is proportional to the internal energy of the plasma and the minor radius, and inversely proportional to the current density. A thermal-conduction energy transport model, based on a heuristic assumption that the effective momentum transfer in the radial direction is proportional to the classical parallel momentum transfer which results in ohmic heating, is used to explain this scaling

Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

International Nuclear Information System (INIS)

Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

2014-01-01

The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Tuning back contact property via artificial interface dipoles in Si/organic hybrid solar cells

Energy Technology Data Exchange (ETDEWEB)

Wang, Dan [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Department of Physics and Institute of Solid-state electronics physical, Ningbo University, Ningbo 315211 (China); Sheng, Jiang, E-mail: shengjiang@nimte.ac.cn; Wu, Sudong; Zhu, Juye; Chen, Shaojie; Gao, Pingqi; Ye, Jichun, E-mail: jichun.ye@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2016-07-25

Back contact property plays a key role in the charge collection efficiency of c-Si/poly(3,4-ethylthiophene):poly(styrenesulfonate) hybrid solar cells (Si-HSCs), as an alternative for the high-efficiency and low-cost photovoltaic devices. In this letter, we utilize the water soluble poly (ethylene oxide) (PEO) to modify the Al/Si interface to be an Ohmic contact via interface dipole tuning, decreasing the work function of the Al film. This Ohmic contact improves the electron collection efficiency of the rear electrode, increasing the short circuit current density (J{sub sc}). Furthermore, the interface dipoles make the band bending downward to increase the total barrier height of built-in electric field of the solar cell, enhancing the open circuit voltage (V{sub oc}). The PEO solar cell exhibits an excellent performance, 12.29% power conversion efficiency, a 25.28% increase from the reference solar cell without a PEO interlayer. The simple and water soluble method as a promising alternative is used to develop the interfacial contact quality of the rear electrode for the high photovoltaic performance of Si-HSCs.

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

International Nuclear Information System (INIS)

Lotkhov, Sergey V

2013-01-01

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

Three-dimensional stellarator equilibrium as an ohmic steady state

International Nuclear Information System (INIS)

Park, W.; Monticello, D.A.; Strauss, H.; Manickam, J.

1985-07-01

A stable three-dimensional stellarator equilibrium can be obtained numerically by a time-dependent relaxation method using small values of dissipation. The final state is an ohmic steady state which approaches an ohmic equilibrium in the limit of small dissipation coefficients. We describe a method to speed up the relaxation process and a method to implement the B vector . del p = 0 condition. These methods are applied to obtain three-dimensional heliac equilibria using the reduced heliac equations

Ohmic Heating Assisted Lye Peeling of Pears.

Science.gov (United States)

Gupta, Sarvesh; Sastry, Sudhir K

2018-05-01

Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

A mechanical-electrical finite element method model for predicting contact resistance between bipolar plate and gas diffusion layer in PEM fuel cells

Energy Technology Data Exchange (ETDEWEB)

Lai, Xinmin; Liu, Dong' an; Peng, Linfa [State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China); Ni, Jun [Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Contact resistance between the bipolar plate (BPP) and the gas diffusion layer (GDL) plays a significant role on the power loss in a proton exchange membrane (PEM) fuel cell. There are two types of contact behavior at the interface of the BPP and GDL, which are the mechanical one and the electrical one. Furthermore, the electrical contact behavior is dependent on the mechanical one. Thus, prediction of the contact resistance is a coupled mechanical-electrical problem. The current FEM models for contact resistance estimation can only simulate the mechanical contact behavior and moreover they are based on the assumption that the contact surface is equipotential, which is not the case in a real BPP/GDL assembly due to the round corner and margin of the BPP. In this study, a mechanical-electrical FEM model was developed to predict the contact resistance between the BPP and GDL based on the experimental interfacial contact resistivity. At first, the interfacial contact resistivity was obtained by experimentally measuring the contact resistance between the GDL and a flat graphite plate of the same material and processing conditions as the BPP. Then, with the interfacial contact resistivity, the mechanical and electrical contact behaviors were defined and the potential distribution of the BPP/GDL assembly was analyzed using the mechanical-electrical FEM model. At last, the contact resistance was calculated according to the potential drop and the current of the contact surface. The numerical results were validated by comparing with those of the model reported previously. The influence of the round corner of the BPP on the contact resistance was also studied and it is found that there exists an optimal round corner that can minimize the contact resistance. This model is beneficial in understanding the mechanical and electrical contact behaviors between the BPP and GDL, and can be used to predict the contact resistance in a new BPP/GDL assembly. (author)

Resistance of Pseudomonas aeruginosa isolates to hydrogel contact lens disinfection correlates with cytotoxic activity.

Science.gov (United States)

Lakkis, C; Fleiszig, S M

2001-04-01

One of the most common pathogens in infection of hydrogel contact lens wearers is Pseudomonas aeruginosa, which can gain access to the eye via contamination of the lens, lens case, and lens care solutions. Only one strain per species is used in current regulatory testing for the marketing of chemical contact lens disinfectants. The aim of this study was to determine whether P. aeruginosa strains vary in their susceptibility to hydrogel contact lens disinfectants. A method for rapidly screening bacterial susceptibility to contact lens disinfectants was developed, based on measurement of the MIC. The susceptibility of 35 P. aeruginosa isolates to two chemical disinfectants was found to vary among strains. MICs ranged from 6.25 to 100% for both disinfectants at 37 degrees C, and a number of strains were not inhibited by a 100% disinfectant concentration in the lens case environment at room temperature (22 degrees C). Resistance to disinfection appeared to be an inherent rather than acquired trait, since some resistant strains had been isolated prior to the introduction of the disinfectants and some susceptible P. aeruginosa strains could not be made more resistant by repeated disinfectant exposure. A number of P. aeruginosa strains which were comparatively more resistant to short-term disinfectant exposure also demonstrated the ability to grow to levels above the initial inoculum in one chemical disinfectant after long-term (24 to 48 h) disinfectant exposure. Resistance was correlated with acute cytotoxic activity toward corneal epithelial cells and with exsA, which encodes a protein that regulates cytotoxicity via a complex type III secretion system. These results suggest that chemical disinfection solutions may select for contamination with cytotoxic strains. Further investigation of the mechanisms and factors responsible for resistance may also lead to strategies for reducing adverse responses to contact lens wear.

Determination of a Wear Initiation Cycle by using a Contact Resistance Measurement in Nuclear Fuel Fretting

International Nuclear Information System (INIS)

Lee, Young Ho; Kim, Hyung Kyu

2008-01-01

In nuclear fuel fretting, the improving of the contact condition with a modified spring shape is a useful method for increasing the wear resistance of the nuclear fuel rod. This is because the fretting wear resistance between the fuel rod and grid spring is mainly affected by the grid spring shape rather than the environment, the contact modes, etc. In addition, the wear resistance is affected by the wear debris behavior between contact surfaces. So, it is expected that the wear initiation of each spring shape should be determined in order to evaluate a wear resistance. However, it is almost impossible to measure the wear behavior in contact surfaces on a real time basis because the contact surfaces are always hidden. Besides, the results of the worn surface observation after the fretting wear tests are restricted to archive the information on the wear debris behavior and the formation mechanism of the wear scar. In order to evaluate the wear behavior during the fretting wear tests, it is proposed that the contact resistance measurement is a useful method for examining the wear initiation cycle and modes. Generally, fretting wear damages are rapidly progressed by a localized plastic deformation between the contact surfaces, crack initiation and fracture of the deformed surface with a strain hardening difference between a surface and a subsurface and finally a detachment of wear debris. After this, wear debris is easily oxidized by frictional heat, test environment, etc. At this time, a small amount of electric current applied between the contact surfaces will be influenced by the wear debris, which could be an obstacle to an electric current flow. So, it is possible to archive the information on the wear behavior by measuring the contact resistance. In order to determine the wear initiation cycle during the fretting wear tests, in this study, fretting wear tests have been performed by applying a constant electric current in room temperature air

Contact printed masks for 3D microfabrication in negative resists

DEFF Research Database (Denmark)

Häfliger, Daniel; Boisen, Anja

2005-01-01

We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded into the ......We present a process based on contact printed shadow masks for three dimensional microfabrication of soft and sensitive overhanging membranes in SU-8. A metal mask is transferred onto unexposed SU-8 from an elastomer stamp made of polydimethylsiloxane. This mask is subsequently embedded...... into the negative resist to protect buried material from UV-exposure. Unlike direct evaporation-deposition of a mask onto the SU-8, printing avoids high stress and radiation, thus preventing resist wrinkling and prepolymerization. We demonstrate effective monolithic fabrication of soft, 4-μm thick and 100-μm long...

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Hypersensitivity to contact inhibition provides a clue to cancer resistance of naked mole-rat.

Science.gov (United States)

Seluanov, Andrei; Hine, Christopher; Azpurua, Jorge; Feigenson, Marina; Bozzella, Michael; Mao, Zhiyong; Catania, Kenneth C; Gorbunova, Vera

2009-11-17

The naked mole-rat is the longest living rodent with a maximum lifespan exceeding 28 years. In addition to its longevity, naked mole-rats have an extraordinary resistance to cancer as tumors have never been observed in these rodents. Furthermore, we show that a combination of activated Ras and SV40 LT fails to induce robust anchorage-independent growth in naked mole-rat cells, while it readily transforms mouse fibroblasts. The mechanisms responsible for the cancer resistance of naked mole-rats were unknown. Here we show that naked mole-rat fibroblasts display hypersensitivity to contact inhibition, a phenomenon we termed "early contact inhibition." Contact inhibition is a key anticancer mechanism that arrests cell division when cells reach a high density. In cell culture, naked mole-rat fibroblasts arrest at a much lower density than those from a mouse. We demonstrate that early contact inhibition requires the activity of p53 and pRb tumor suppressor pathways. Inactivation of both p53 and pRb attenuates early contact inhibition. Contact inhibition in human and mouse is triggered by the induction of p27(Kip1). In contrast, early contact inhibition in naked mole-rat is associated with the induction of p16(Ink4a). Furthermore, we show that the roles of p16(Ink4a) and p27(Kip1) in the control of contact inhibition became temporally separated in this species: the early contact inhibition is controlled by p16(Ink4a), and regular contact inhibition is controlled by p27(Kip1). We propose that the additional layer of protection conferred by two-tiered contact inhibition contributes to the remarkable tumor resistance of the naked mole-rat.

Thermal resistance of indium coated sapphire–copper contacts below 0.1K

CERN Document Server

Eisel, T; Koettig, T

2014-01-01

High thermal resistances exist at ultra-low temperatures for solid-solid interfaces. This is especially true for pressed metal-sapphire joints, where the heat is transferred by phonons only. For such pressed joints it is difficult to achieve good physical, i.e. thermal contacts due to surface irregularities in the microscopic or larger scale. Applying ductile indium as an intermediate layer reduces the thermal resistance of such contacts. This could be proven by measurements of several researchers. However, the majority of the measurements were performed at temperatures higher than 1 K. Consequently, it is difficult to predict the thermal resistance of pressed metal-sapphire joints at temperatures below 1 K. In this paper the thermal resistances across four different copper-sapphire-copper sandwiches are presented in a temperature range between 30 mK and 100 mK. The investigated sandwiches feature either rough or polished sapphire discs (empty set 20 mm x 1.5 mm) to investigate the phonon scattering at the bo...

Effect of ohmic heating processing conditions on color stability of fungal pigments.

Science.gov (United States)

Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

2017-06-01

The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min -1 in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

The effect of radiation intensity on diode characteristics of silicon solar cells

International Nuclear Information System (INIS)

Asgerov, Sh.Q; Agayev, M.N; Hasanov, M.H; Pashayev, I.G

2008-01-01

In order to explore electro-physical properties of silicon solar cells, diode characteristics and ohmic properties of Al - Ni / (n+) - Si contact has been studied. Diode characteristics have been studied on a wide temperature range and on various radiation intensity, so this gives us the ability to observe the effect of the radiation and the temperature on electro-physical properties of under study solar cells. Volt-Ampere characteristics of the ohmic contacts of the silicon solar cells have been presented. As well as contact resistance and mechanism of current transmission has been identified.

Specific features of the photoconductivity of semi-insulating cadmium telluride

Energy Technology Data Exchange (ETDEWEB)

Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

2014-12-15

The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N.; Gnade, Bruce E.

2018-01-01

that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising

THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

International Nuclear Information System (INIS)

Rauscher, Emily; Menou, Kristen

2013-01-01

We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T eq ≈ 1200 K) and HD 209458b (T eq ≈ 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B ≥ 3-10 G.

Two-point concrete resistivity measurements: interfacial phenomena at the electrode–concrete contact zone

International Nuclear Information System (INIS)

McCarter, W J; Taha, H M; Suryanto, B; Starrs, G

2015-01-01

Ac impedance spectroscopy measurements are used to critically examine the end-to-end (two-point) testing technique employed in evaluating the bulk electrical resistivity of concrete. In particular, this paper focusses on the interfacial contact region between the electrode and specimen and the influence of contacting medium and measurement frequency on the impedance response. Two-point and four-point electrode configurations were compared and modelling of the impedance response was undertaken to identify and quantify the contribution of the electrode–specimen contact region on the measured impedance. Measurements are presented in both Bode and Nyquist formats to aid interpretation. Concretes mixes conforming to BSEN206-1 and BS8500-1 were investigated which included concretes containing the supplementary cementitious materials fly ash and ground granulated blast-furnace slag. A measurement protocol is presented for the end-to-end technique in terms of test frequency and electrode–specimen contacting medium in order to minimize electrode–specimen interfacial effect and ensure correct measurement of bulk resistivity. (paper)

Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact

Energy Technology Data Exchange (ETDEWEB)

Wang, Ying; Yang, Lin' an, E-mail: layang@xidian.edu.cn; Wang, Zhizhe; Chen, Qing; Huang, Yonghong; Dai, Yang; Chen, Haoran; Zhao, Hongliang; Hao, Yue [The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2014-09-07

We present a numerical analysis on an ultra-short channel AlGaN/GaN HEMT-like planar Gunn diode based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In particular, we propose a Schottky-ohmic composite contact instead of traditional ohmic contact for the Gunn diode in order to significantly suppress the impact ionization at the anode side and shorten the “dead zone” at the cathode side, which is beneficial to the formation and propagation of dipole domain in the ultra-short 2-DEG channel and the promotion of conversion efficiency. The influence of the surface donor-like traps on the electron domain in the 2-DEG channel is also included in the simulation.

Passivation of a Metal Contact with a Tunneling Layer

DEFF Research Database (Denmark)

Loozen, X.; Larsen, J.B.; Dross, F.

2011-01-01

The potential of contact passivation for increasing cell performance is indicated by several results reported in the literature. However, scant characterization of the tunneling layers used for that purpose has been reported. In this paper, contact passivation is investigated by insertion...... of an ultra-thin AlOx layer between an n-type emitter and a Ti/Pd/Ag contact. By using a 1.5nm thick layer, an increase of the minority carrier lifetime by a factor of 2.7 is achieved. Since current-voltage measurements indicate that an ohmic behavior is conserved for AlOx layers as thick as 1.5nm, a 1.5nm Al...

Innovative food processing technology using ohmic heating and aseptic packaging for meat.

Science.gov (United States)

Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

2014-02-01

Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

Point contact tunneling spectroscopy apparatus for large scale mapping of surface superconducting properties

Energy Technology Data Exchange (ETDEWEB)

Groll, Nickolas; Pellin, Michael J. [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); Zasadzinksi, John F. [Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Proslier, Thomas, E-mail: prolier@anl.gov [Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States); High Energy Physics Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)

2015-09-15

We describe the design and testing of a point contact tunneling spectroscopy device that can measure material surface superconducting properties (i.e., the superconducting gap Δ and the critical temperature T{sub C}) and density of states over large surface areas with size up to mm{sup 2}. The tip lateral (X,Y) motion, mounted on a (X,Y,Z) piezo-stage, was calibrated on a patterned substrate consisting of Nb lines sputtered on a gold film using both normal (Al) and superconducting (PbSn) tips at 1.5 K. The tip vertical (Z) motion control enables some adjustment of the tip-sample junction resistance that can be measured over 7 orders of magnitudes from a quasi-ohmic regime (few hundred Ω) to the tunnel regime (from tens of kΩ up to few GΩ). The low noise electronic and LabVIEW program interface are also presented. The point contact regime and the large-scale motion capabilities are of particular interest for mapping and testing the superconducting properties of macroscopic scale superconductor-based devices.

Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

Science.gov (United States)

Abanov, Artem; Tretiakov, Oleg; Liu, Yang

2011-03-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Energy Technology Data Exchange (ETDEWEB)

Daniltsev, V. M.; Demidov, E. V.; Drozdov, M. N.; Drozdov, Yu. N., E-mail: drozdyu@ipmras.ru; Kraev, S. A.; Surovegina, E. A.; Shashkin, V. I.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2016-11-15

The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 10{sup 21} cm{sup –3} without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 10{sup 19} cm{sup –3}) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10{sup –6} Ω cm{sup 2}) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 10{sup 20} cm{sup –3} are detected.

A thermal transport coefficient for ohmic and ICRF plasmas in alcator C-mode

International Nuclear Information System (INIS)

Daughton, W.; Coppi, B.; Greenwald, M.

1996-01-01

The energy confinement in plasmas produced by Alcator C-Mod machine is markedly different from that observed by previous high field compact machines such as Alcator A and C, FT, and more recently FTU. For ohmic plasmas at low and moderate densities, the confinement times routinely exceed those expected from the so-called open-quotes neo-Alcatorclose quotes scaling by a factor as high as three. For both ohmic and ICRF heated plasmas, the energy confinement time increases with the current and is approximately independent of the density. The similarity in the confinement between the ohmic and ICRF regimes opens the possibility that the thermal transport in Alcator C-Mod may be described by one transport coefficient for both regimes. We introduce a modified form of a transport coefficient previously used to describe ohmic plasmas in Alcator C-Mod. The coefficient is inspired by the properties of the so-called open-quotes ubiquitousclose quotes mode that can be excited in the presence of a significant fraction of trapped electrons and also includes the constraint of profile consistency. A detailed series of transport simulations are used to show that the proposed coefficient can reproduce the observed temperature profiles, loop voltage and energy confinement time for both ohmic and ICRF discharges. A total of nearly two dozen ohmic and ICRF Alcator C-Mod discharges have been fit over the range of parameter space available using this transport coefficient

Analysis of the ion energy transport in ohmic discharges in the ASDEX tokamak

International Nuclear Information System (INIS)

Simmet, E.E.; Fahrbach, H.U.; Herrmann, W.; Stroth, U.

1996-10-01

An analysis of the local ion energy transport is performed for more than one hundred well documented ohmic ASDEX discharges. These are characterized by three different confinement regimes: the linear ohmic confinement (LOC), the saturated ohmic confinement (SOC) and the improved ohmic confinement (IOC). All three are covered by this study. To identify the most important local transport mechanism of the ion heat, the ion power balance equation is analyzed. Two methods are used: straightforward calculation with experimental data only, and a comparison of measured and calculated profiles of the ion temperature and the ion heat conductivity, respectively. A discussion of the power balance shows that conductive losses dominate the ion energy transport in all ohmic discharges of ASDEX. Only inside the q=1-surface losses due to sawtooth activity play a role, while at the edge convective fluxes and CX-losses influence the ion energy transport. Both methods lead to the result that both the ion temperature and the ion heat conductivity are consistent with predictions of the neoclassical theory. Enhanced heat losses as suggested by theories eg. on the basis of η i modes can be excluded. (orig.)

Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

Science.gov (United States)

Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

2010-11-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

Directory of Open Access Journals (Sweden)

Reta

2017-07-01

Full Text Available Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has high acidity that needs to be reduced than Luwak coffee, although it is cheaper. Hence, the ohmic technology with a time and temperature variation were applied to measure the total acidity of the coffee to determine optimum fermentation conditions. Results revealed that the total acidity of the coffee varied with fermentation conditions (0.18% – 0.73%. Generally, the longer the fermentation and the higher the temperature, the lower the total acidity. The acidity of the Luwak coffee through natural fermentation was 2.34%, which is substantially higher than the total acidity from the ohmic samples. Ohmic-based fermentation technology, therefore, offers improvements in coffee quality.

Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

KAUST Repository

Sun, Jian

2011-08-06

In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.

Design of TFTR movable limiter blades for ohmic and neutral-beam-heated plasmas

International Nuclear Information System (INIS)

Doll, D.W.; Ulrickson, M.A.; Cecchi, J.L.; Citrolo, J.C.; Weissenburger, D.; Bialek, J.

1981-10-01

A new set of movable limiter blades has been designed for TFTR that will meet both the requirements of the 4 MW ohmic heated and the 33 MW neutral beam heated plasmas. This is accomplished with three limiter blades each having and elliptical shape along the toroidal direction. Heat flux levels are acceptable for both ohmic heated and pre-strong compression plasmas. The construction consists of graphite tiles attached to cooled backing plates. The tiles have an average thickness of approx. 4.7 cm and are drawn against the backing plate with spring loaded fasteners that are keyed into the graphite. The cooled backing plate provides the structure for resisting disruption and fault induced loads. A set of rollers attached to the top and bottom blades allow them to be expanded and closed in order to vary the plasma surface for scaling experiments. Water cooling lines penetrate only the mid-plane port cover/support plate in such a way as to avoid bolted water connections inside the vacuum boundary and at the same time allow blade movement. Both the upper and lower blades are attached to the mid-plane limiter blade through pivots. Pivot connections are protected against arcing with an alumina coating and a shunt bar strap. Remote handling is considered throughout the design

A variational master equation approach to quantum dynamics with off-diagonal coupling in a sub-Ohmic environment

Energy Technology Data Exchange (ETDEWEB)

Sun, Ke-Wei [School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fujihashi, Yuta; Ishizaki, Akihito [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2016-05-28

A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagrams are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.

Power balance in an Ohmically heated fusion reactor

International Nuclear Information System (INIS)

Christiansen, J.P.; Roberts, K.V.

1982-01-01

A simplified power-balance equation (zero-dimensional model) is used to study the performance of an Ohmically heated fusion reactor with emphasis on a pulsed reversed-field pinch concept (RFP). The energy confinement time tausub(E) is treated as an adjustable function, and empirical tokamak scaling laws are employed in the numerical estimates, which are supplemented by 1-D ATHENE code calculations. The known heating rates and energy losses are represented by the net energy replacement time tausub(W), which is exhibited as a surface in density (n) and temperature (T) space with a saddle point (nsub(*), Tsub(*)), the optimum ignition point. It is concluded that i) ignition by Ohmic heating is more practicable for the RFP reactor than for a tokamak reactor with the same tausub(E), (ii) if at fixed current the minor radius can be reduced or at fixed minor radius the current can be increased, then it is found that Ohmic ignition becomes more likely when present tokamak scaling laws are used. More definitive estimates require, however, a knowledge of tausub(E), which can only be obtained by establishing a reliable set of experimental RFP scaling laws and, in particular, by extending RFP experiments closer to the reactor regime. (author)

Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Science.gov (United States)

Han, Zhiheng; Xu, Guangwei; Wang, Wei; Lu, Congyan; Lu, Nianduan; Ji, Zhuoyu; Li, Ling; Liu, Ming

2016-07-01

Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

International Nuclear Information System (INIS)

Choi, Yunju; Kim, Yangsoo; Ahn, Kwang-Soon; Kim, Hyunsoo

2014-01-01

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10 −3 , 4.3 × 10 −4 , and 1.1 × 10 −3 Ω cm 2 for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N 2 ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples

Thermal stability study of Cr/Au contact formed on n-type Ga-polar GaN, N-polar GaN, and wet-etched N-polar GaN surfaces

Energy Technology Data Exchange (ETDEWEB)

Choi, Yunju [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Kim, Yangsoo [Suncheon Center, Korea Basic Science Institute, Suncheon 540-742 (Korea, Republic of); Ahn, Kwang-Soon, E-mail: kstheory@ynu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 712-749 (Korea, Republic of); Kim, Hyunsoo, E-mail: hskim7@jbnu.ac.kr [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

2014-10-30

Highlights: • The Cr/Au contact on n-type Ga-polar (0 0 0 1) GaN, N-polar (0 0 0 −1) GaN, and wet-etched N-polar GaN were investigated. • Thermal annealing led to a significant degradation of contact formed on N-polar n-GaN samples. • Contact degradation was shown to be closely related to the increase in the electrical resistivity of n-GaN. • Out-diffusion of Ga and N atoms was clearly observed in N-polar samples. - Abstract: The electrical characteristics and thermal stability of a Cr/Au contact formed on n-type Ga-polar (0 0 0 1) GaN, N-polar GaN, and wet-etched N-polar GaN were investigated. As-deposited Cr/Au showed a nearly ohmic contact behavior for all samples, i.e., the specific contact resistance was 3.2 × 10{sup −3}, 4.3 × 10{sup −4}, and 1.1 × 10{sup −3} Ω cm{sup 2} for the Ga-polar, flat N-polar, and roughened N-polar samples, respectively. However, thermal annealing performed at 250 °C for 1 min in a N{sub 2} ambient led to a significant degradation of contact, i.e., the contact resistance increased by 186, 3260, and 2030% after annealing for Ga-polar, flat N-polar, and roughened N-polar samples, respectively. This could be due to the different disruption degree of Cr/Au and GaN interface after annealing, i.e., the insignificant interfacial reaction occurred in the Ga-polar sample, while out-diffusion of Ga and N atoms was clearly observed in N-polar samples.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.

2010-09-24

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

KAUST Repository

Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Pieper, Ron J.; Quevedo-Ló pez, Manuel Angel Quevedo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Gnade, Bruce E.

2010-01-01

The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

The properties of metal contacts on TiO2 thin films produced by reactive magnetron sputtering

Directory of Open Access Journals (Sweden)

Brus V. V.

2010-10-01

Full Text Available The article deals with research on volt-ampere characteristics of metal contacts (Al, Cr, In, Mo, Ti on titanium dioxide thin films and influence of annealing in vacuum on their electric properties. Volt-ampere characteristics measurements were taken by three-probe method. There was established that indium contact on TiO2 thin films possessed sharply defined ohmic properties.

An analytical model and parametric study of electrical contact resistance in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin; Zhang, Lianhong [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2009-04-15

This paper presents an analytical model of the electrical contact resistance between the carbon paper gas diffusion layers (GDLs) and the graphite bipolar plates (BPPs) in a proton exchange membrane (PEM) fuel cell. The model is developed based on the classical statistical contact theory for a PEM fuel cell, using the same probability distributions of the GDL structure and BPP surface profile as previously described in Wu et al. [Z. Wu, Y. Zhou, G. Lin, S. Wang, S.J. Hu, J. Power Sources 182 (2008) 265-269] and Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Results show that estimates of the contact resistance compare favorably with experimental data by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Factors affecting the contact behavior are systematically studied using the analytical model, including the material properties of the two contact bodies and factors arising from the manufacturing processes. The transverse Young's modulus of chopped carbon fibers in the GDL and the surface profile of the BPP are found to be significant to the contact resistance. The factor study also sheds light on the manufacturing requirements of carbon fiber GDLs for a better contact performance in PEM fuel cells. (author)

Development and applications of the contact electric resistance technique

Energy Technology Data Exchange (ETDEWEB)

Saario, T.

1995-12-31

At the moment both the scientific understanding of corrosion processes and the engineering practices of corrosion control in power plants can benefit considerably from the development of in situ on-line instruments for characterisation of the surface films on construction materials. In this work a new in situ Contact Electric Resistance (CER) technique has been developed for measurement of electric resistance of surface films on metals. The CER technique was applied in this work in several different research areas. These include e.g. localized corrosion of stainless steel in paper mill wet end environment, investigation of the effect of inhibitors in steam generator crevice environments, passivation of GaAs single crystals by sulphate treatment and monitoring of the kinetics of oxide growth on zirconium metals in high temperature water. The CER technique has a measurement capacity ranging from 10-9 {omega} to 105 {omega}. The lowest range of resistance is typical for metallic layers deposited on the surface in electrodeposition processes. The highest range of resistance is found for insulator type of films e.g. on zirconium metals. (author)

Ohmic discharges in Tore Supra - Marfes and detached plasmas

International Nuclear Information System (INIS)

Vallet, J.C.

1990-01-01

The Tore Supra plasma characteristics are given. The observed discharges are either leaning on the graphite inner first wall or limited by movable pump limiters located outboard and at the bottom of the vacuum chamber. The particular plasma conditions which lead to marfes and detached plasmas in ohmically heated He and D2 discharges limited by the inner wall are investigated. The results show that the ratio of radiated power to ohmic power increase linearly with M.g. As M.g rises, attached plasma, marfe and detached plasma are sequentially observed. Detached plasma with an effective radius as small as. 7 times the limiter radius was observed on Tore Supra

An improved model for predicting electrical contact resistance between bipolar plate and gas diffusion layer in proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhiliang; Wang, Shuxin [School of Mechanical Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yuanyuan; Lin, Guosong; Hu, S. Jack [Department of Mechanical Engineering, The University of Michigan, Ann Arbor, MI 48109-2125 (United States)

2008-07-15

Electrical contact resistance between bipolar plates (BPPs) and gas diffusion layers (GDLs) in PEM fuel cells has attracted much attention since it is one significant part of the total contact resistance which plays an important role in fuel cell performance. This paper extends a previous model by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783] on the prediction of electrical contact resistance within PEM fuel cells. The original microscale numerical model was based on the Hertz solution for individual elastic contacts, assuming that contact bodies, GDL carbon fibers and BPP asperities are isotropic elastic half-spaces. The new model features a more practical contact by taking into account the bending behavior of carbon fibers as well as their anisotropic properties. The microscale single contact process is solved numerically using the finite element method (FEM). The relationship between the contact pressure and the electrical resistance at the GDL/BPP interface is derived by multiple regression models. Comparisons of the original model by Zhou et al. and the new model with experimental data show that the original model slightly overestimates the electrical contact resistance, whereas a better agreement with experimental data is observed using the new model. (author)

The Achievement of Near-Theoretical-Minimum Contact Resistance to InP

Science.gov (United States)

Fatemi, Navid S.; Weizer, Victor G.

1993-01-01

We have investigated the electrical and metallurgical behavior of the InP/Au/Ni contact system. We show that when a layer of Au, 100 A or more in thickness, is introduced between n-InP and Ni contact metallization, specific contact resistivity R, values in the low 10(exp -8) Omega cm(exp 2) range are achieved after sintering. It is suggested that these ultralow values of R(sub c) are due to the presence, at the metal-InP interface, of a Ni3P layer combined with a stoichiometry change in the InP surface. We show, in addition, that it is possible to achieve very low R(sub c) values with this system without incurring device destroying sinter-induced metallurgical interdiffusion.

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode.

Science.gov (United States)

Zhao, Yudan; Xiao, Xiaoyang; Huo, Yujia; Wang, Yingcheng; Zhang, Tianfu; Jiang, Kaili; Wang, Jiaping; Fan, Shoushan; Li, Qunqing

2017-06-07

We have fabricated carbon nanotube and MoS 2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (Φ SB ) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the Φ SB for both contact forms of CNT and MoS 2 devices; we found that the Φ SB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 10 4 ; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.

Efros-Shklovskii variable range hopping and nonlinear transport in 1 T /1 T'-MoS2

Science.gov (United States)

Papadopoulos, N.; Steele, G. A.; van der Zant, H. S. J.

2017-12-01

We have studied temperature- and electric-field-dependent carrier transport in single flakes of MoS2 treated with n -butyllithium. The temperature dependence of the four-terminal resistance follows the Efros-Shklovskii variable range hopping conduction mechanism. From measurements in the Ohmic and non-Ohmic regime, we estimate the localization length and the average hopping length of the carriers, as well as the effective dielectric constant. Furthermore, a comparison between two- and four-probe measurements yields a contact resistance that increases significantly with decreasing temperature.

Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

Science.gov (United States)

Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

2018-04-01

Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

Ohmic Heating Technology and Its Application in Meaty Food: A Review

OpenAIRE

Rishi Richa; N. C. Shahi; Anupama Singh; U. C. Lohani; P. K. Omre; Anil Kumar; T. K. Bhattacharya

2017-01-01

The purpose of the current review paper is to investigate and analyze about the effects of ohmic heating (OH) different application in the field of fish, meat and its product and compare it with other conventional thermal methods of food processing such as thawing, heating, cooking etc. Food quality, food safety, convenience, freshness, healthy food, natural flavor and taste with extended shelf-life are the main criteria for the demand made by today’s consumers. Ohmic heating is a substitute ...

Confinement requirements for OHMIC-compressive ignition of a Spheromak plasma

International Nuclear Information System (INIS)

Olson, R.; Gilligan, J.; Miley, G.

1980-01-01

The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression along were sufficient to heat the plasmoids to an ignition temperature. In the present work, we will study the transport conditions under which a Spheromak plasmoid could be expected to reach ignition via a combination of ohmic and compression heating

Confinement requirements for ohmic-compressive ignition of a Spheromak plasma

International Nuclear Information System (INIS)

Olson, R.E.; Miley, G.H.

1981-01-01

The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression alone is sufficient to heat the plasmoids to an ignition temperature. In the present work, we examine the transport conditions under which a Spheromak plasmoid can be expected to reach ignition via a combination of ohmic and compression heating

Contact resistance problems applying ERT on low bulk density forested stony soils. Is there a solution?

Science.gov (United States)

Deraedt, Deborah; Touzé, Camille; Robert, Tanguy; Colinet, Gilles; Degré, Aurore; Garré, Sarah

2015-04-01

Electrical resistivity tomography (ERT) has often been put forward as a promising tool to quantify soil water and solute fluxes in a non-invasive way. In our experiment, we wanted to determine preferential flow processes along a forested hillslope using a saline tracer with ERT. The experiment was conducted in the Houille watershed, subcatchment of the Meuse located in the North of Belgian Ardennes (50° 1'52.6'N, 4° 53'22.5'E). The climate is continental but the soil under spruce (Picea abies (L.) Karst.) and Douglas fire stand (Pseudotsuga menziesii (Mirb.) Franco) remains quite dry (19% WVC in average) during the whole year. The soil is Cambisol and the parent rock is Devonian schist covered with variable thickness of silty loam soil. The soil density ranges from 1.13 to 1.87 g/cm3 on average. The stone content varies from 20 to 89% and the soil depth fluctuates between 70 and 130 cm. The ERT tests took place on June 1st 2012, April 1st, 2nd and 3rd 2014 and May 12th 2014. We used the Terrameter LS 12 channels (ABEM, Sweden) in 2012 test and the DAS-1 (Multi-Phase Technologies, United States) in 2014. Different electrode configurations and arrays were adopted for different dates (transect and grid arrays and Wenner - Schlumberger, Wenner alpha and dipole-dipole configurations). During all tests, we systematically faced technical problems, mainly related to bad electrode contact. The recorded data show values of contact resistance above 14873 Ω (our target value would be below 3000 Ω). Subsequently, we tried to improve the contact by predrilling the soil and pouring water in the electrode holes. The contact resistance improved to 14040 Ω as minimum. The same procedure with liquid mud was then tested to prevent quick percolation of the water from the electrode location. As a result, the lower contact resistance dropped to 11745 Ω. Finally, we applied about 25 litre of saline solution (CaCl2, 0.75g/L) homogeneously on the electrode grid. The minimum value of

Energy confinement scaling in tokamaks: some implications of recent experiments with ohmic and strong auxiliary heating

International Nuclear Information System (INIS)

Goldston, R.J.

1984-02-01

Recent results from confinement scaling experiments on tokamaks with ohmic and strong auxiliary heating are reviewed. An attempt is made to draw these results together into a low-density ohmic confinement scaling law, and a scaling law for confinement with auxiliary heating. The auxiliary heating confinement law may also serve to explain the saturation in tau/sub E/ vs anti n/sub e/ observed in some ohmic heating density scaling experiments

Alloyed Aluminum Contacts for Silicon Solar Cells

International Nuclear Information System (INIS)

Tin Tin Aye

2010-12-01

Aluminium is usually deposited and alloyed at the back of p-p silicon solar cell for making a good ohmic contact and establishing a back electric field which avoids carrier recombination of the back surface. It was the deposition of aluminum on multicrystalline silicon (mc-Si) substrate at various annealing temperature. Physical and elemental analysis was carried out by using scanning electron microscopy (SEM) and X-rays diffraction (XRD). The electrical (I-V) characteristic of the photovoltaic cell was also measured.

Experimental investigation of the contact resistance of Graphene/MoS2 interface treated with O2 plasma

Science.gov (United States)

Lu, Qin; Liu, Yan; Han, Genquan; Fang, Cizhe; Shao, Yao; Zhang, Jincheng; Hao, Yue

2018-02-01

High contact resistance has been a major bottleneck for MoS2 to achieve high performances among two-dimensional material based optoelectronic and electronic devices. In this study, we investigate the contact resistances of different layered graphene film with MoS2 film with Ti/Au electrodes under different O2 plasma treatment time using the circular transmission line model (CTLM). Annealing process followed O2 plasma process to reduce the oxygen element introduced. Raman and X-ray photoelectric spectroscopy were used to analyze the quality of the materials. Finally, the current and voltage curve indicates good linear characteristics. Under the optimized condition of the O2 plasma treatment, a relatively low contact resistance (∼35.7 Ohm mm) without back gate voltage in single-layer graphene/MoS2 structure at room temperature was achieved compared with the existing reports. This method of introducing graphene as electrodes for MoS2 film demonstrates a remarkable ability to improve the contact resistance, without additional channel doping for two-dimensional materials based devices, which paves the way for MoS2 to be a more promising channel material in optoelectronic and electronic integration.

Relationships among the contact patch length and width, the tire deflection and the rolling resistance of a free-running wheel in a soil bin facility

Energy Technology Data Exchange (ETDEWEB)

Tomaraee, P.; Mardani, A.; Mohebbi, A.; Taghavifar, H.

2015-07-01

Qualitative and quantitative analysis of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance at different wheel load and inflation pressure levels is presented. The experiments were planned in a randomized block design and were conducted in the controlled conditions provided by a soil bin environment utilizing a well-equipped single wheel-tester of Urmia University, Iran. The image processing technique was used for determination of the contact patch length and contact patch width. Analysis of covariance was used to evaluate the correlations. The highest values of contact length and width and tire deflection occurred at the highest wheel load and lowest tire inflation pressure. Contact patch width is a polynomial (order 2) function of wheel load while there is a linear relationship between tire contact length and wheel load as well as between tire deflection and wheel load. Correlations were developed for the evaluation of contact patch length-rolling resistance, contact patch width-rolling resistance and tire deflection-rolling resistance. It is concluded that the variables studied have a significant effect on rolling resistance. (Author)

Improving the contact resistance at low force using gold coated carbon nanotube surfaces

Science.gov (United States)

McBride, J. W.; Yunus, E. M.; Spearing, S. M.

2010-04-01

Investigations to determine the electrical contact performance under repeated cycles at low force conditions for carbon-nanotube (CNT) coated surfaces were performed. The surfaces under investigation consisted of multi-walled CNT synthesized on a silicon substrate and coated with a gold film. These planar surfaces were mounted on the tip of a PZT actuator and contacted with a plated Au hemispherical probe. The dynamic applied force used was 1 mN. The contact resistance (Rc) of these surfaces was investigated with the applied force and with repeated loading cycles performed for stability testing. The surfaces were compared with a reference Au-Au contact under the same experimental conditions. This initial study shows the potential for the application of gold coated CNT surfaces as an interface in low force electrical contact applications.

Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

International Nuclear Information System (INIS)

Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

2014-01-01

Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

Impurity toroidal rotation and transport in Alcator C-Mod ohmic high confinement mode plasmas

International Nuclear Information System (INIS)

Rice, J. E.; Goetz, J. A.; Granetz, R. S.; Greenwald, M. J.; Hubbard, A. E.; Hutchinson, I. H.; Marmar, E. S.; Mossessian, D.; Pedersen, T. Sunn; Snipes, J. A.

2000-01-01

Central toroidal rotation and impurity transport coefficients have been determined in Alcator C-Mod [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] Ohmic high confinement mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3x10 4 m/sec in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely ohmic H-mode plasmas display many characteristics similar to ion cyclotron range of frequencies (ICRF) heated H-mode plasmas, including the scaling of the rotation velocity with plasma parameters and the formation of edge pedestals in the electron density and temperature profiles. Very long impurity confinement times (∼1 sec) are seen in edge localized mode-free (ELM-free) Ohmic H-modes and the inward impurity convection velocity profile has been determined to be close to the calculated neoclassical profile. (c) 2000 American Institute of Physics

Determination of work function of graphene under a metal electrode and its role in contact resistance.

Science.gov (United States)

Song, Seung Min; Park, Jong Kyung; Sul, One Jae; Cho, Byung Jin

2012-08-08

Although the work function of graphene under a given metal electrode is critical information for the realization of high-performance graphene-based electronic devices, relatively little relevant research has been carried out to date. In this work, the work function values of graphene under various metals are accurately measured for the first time through a detailed analysis of the capacitance-voltage (C-V) characteristics of a metal-graphene-oxide-semiconductor (MGOS) capacitor structure. In contrast to the high work function of exposed graphene of 4.89-5.16 eV, the work function of graphene under a metal electrode varies depending on the metal species. With a Cr/Au or Ni contact, the work function of graphene is pinned to that of the contacted metal, whereas with a Pd or Au contact the work function assumes a value of ∼4.62 eV regardless of the work function of the contact metal. A study of the gate voltage dependence on the contact resistance shows that the latter case provides lower contact resistance.

Evaluation of contact resistance between carbon fiber/epoxy composite laminate and printed silver electrode for damage monitoring

International Nuclear Information System (INIS)

Jeon, Eun Beom; Kim, Hak Sung; Takahashi, Kosuke

2014-01-01

An addressable conducting network (ACN) makes it possible to monitor the condition of a structure using the electrical resistance between electrodes on the surface of a carbon fiber reinforced plastics (CFRP) structure. To improve the damage detection reliability of the ACN, the contact resistances between the electrodes and CFRP laminates needs to be minimized. In this study, silver nanoparticle electrodes were fabricated via printed electronics techniques on a CFRP composite. The contact resistance between the silver electrodes and CFRP were measured with respect to various fabrication conditions such as the sintering temperature of the silver nano-ink and the surface roughness of the CFRP laminates. The interfaces between the silver electrode and carbon fibers were observed using a scanning electron microscope (SEM). Based on this study, it was found that the lowest contact resistance of 0.3664Ω could be achieved when the sintering temperature of the silver nano-ink and surface roughness were 120 degree C and 0.230 a, respectively.

Rough surface electrical contact resistance considering scale dependent properties and quantum effects

International Nuclear Information System (INIS)

Jackson, Robert L.; Crandall, Erika R.; Bozack, Michael J.

2015-01-01

The objective of this work is to evaluate the effect of scale dependent mechanical and electrical properties on electrical contact resistance (ECR) between rough surfaces. This work attempts to build on existing ECR models that neglect potentially important quantum- and size-dependent contact and electrical conduction mechanisms present due to the asperity sizes on typical surfaces. The electrical conductance at small scales can quantize or show a stepping trend as the contact area is varied in the range of the free electron Fermi wavelength squared. This work then evaluates if these effects remain important for the interface between rough surfaces, which may include many small scale contacts of varying sizes. The results suggest that these effects may be significant in some cases, while insignificant for others. It depends on the load and the multiscale structure of the surface roughness

Role of metal/silicon semiconductor contact engineering for enhanced output current in micro-sized microbial fuel cells

KAUST Repository

Mink, Justine E.

2013-11-25

We show that contact engineering plays an important role to extract the maximum performance from energy harvesters like microbial fuel cells (MFCs). We experimented with Schottky and Ohmic methods of fabricating contact areas on silicon in an MFC contact material study. We utilized the industry standard contact material, aluminum, as well as a metal, whose silicide has recently been recognized for its improved performance in smallest scale integration requirements, cobalt. Our study shows that improvements in contact engineering are not only important for device engineering but also for microsystems. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Impact of nitrogen plasma passivation on the Al/n-Ge contact

Energy Technology Data Exchange (ETDEWEB)

Lai, Shumei; Mao, Danfeng [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Ruan, Yujiao [Xiamen Institute of Measurement and Testing, Xiamen, Fujian 361004 (China); Xu, Yihong; Huang, Zhiwei; Huang, Wei [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Chen, Songyan, E-mail: sychen@xmu.edu.cn [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Li, Cheng; Wang, Jianyuan [Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); Tang, Dingliang [College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian 361005 (China)

2016-09-15

Highlights: • A thin GeO{sub x}N{sub y} layer was formed by N{sub 2} plasma. • The principal parameters of N{sub 2} plasma treatment and additional post anneal have a great impact on the Al/n-Ge contact. • A model was proposed to explain the variation of Schottky barrier height. • The GeO{sub x}N{sub y} layer was also benefit to achieve a low leakage current density for HfO{sub 2}/Ge MOS capacitors. - Abstract: Severe Fermi level pinning at the interface of metal/n-Ge leads to the formation of a Schottky barrier. Therefore, a high contact resistance is introduced, debasing the performance of Ge devices. In this study, a Ge surface was treated by nitrogen plasma to form an ultra-thin Germanium oxynitride (GeO{sub x}N{sub y}) passivation layer. It was found that the Schottky barrier height (SBH) of metal/n-Ge contact was strongly modulated by the GeO{sub x}N{sub y} interlayer, indicating alleviation of Fermi-level pinning effect. By adjusting the principal parameters of N{sub 2} plasma treatment and additional post anneal, a Quasi-ohmic Al/n-Ge contact was achieved. Furthermore, the introduced GeO{sub x}N{sub y} layer gave extremely lower leakage current density of the gate stack for HfO{sub 2}/Ge devices. These results demonstrate that GeO{sub x}N{sub y} formed by N{sub 2} plasma would be greatly beneficial to the fabrication of the Ge-based devices.

Laminar forced convection in a cylindrical collinear ohmic sterilizer

Directory of Open Access Journals (Sweden)

Pesso Tommaso

2017-01-01

Full Text Available The present work deals with a thermo-fluid analysis of a collinear cylindrical ohmic heater in laminar flow. The geometry of interest is a circular electrically insulated glass pipe with two electrodes at the pipe ends. For this application, since the electrical conductivity of a liquid food depends strongly on the temperature, the thermal analysis of an ohmic heater requires the simultaneous solution of the electric and thermal fields. In the present work the analysis involves decoupling the previous fields by means of an iterative procedure. The thermal field has been calculated using an analytical solution, which leads to fast calculations for the temperature distribution in the heater. Some considerations of practical interest for the design are also given.

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan

2016-12-29

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a method includes preparing a pretreated target area on a CFRP composite surface using laser pulsed irradiation and bonding an electrode to exposed fibers in the pretreated target area. The surface preparation can allow the electrode to have a low contact resistance with the CFRP composite.

Thermometry in dielectrophoresis chips for contact-free cell handling

International Nuclear Information System (INIS)

Jaeger, M S; Mueller, T; Schnelle, T

2007-01-01

Cell biology applications, protocols in immunology and stem cell research, require that individual cells are handled under strict control of their contacts to other cells or synthetic surfaces. Dielectrophoresis (DEP) in microfluidic chips is an established technique to investigate, group, wash, cultivate and sort cells contact-free under physiological conditions: microelectrode octode cages, versatile dielectrophoretic elements energized with radio frequency electric fields, stably trap single cells or cellular aggregates. For medical applications and cell cultivation, possible side effects of the dielectrophoretic manipulation, such as membrane polarization and Joule heating, have to be quantified. Therefore, we characterized the electric field-induced warming in dielectrophoretic cages using ohmic resistance measurements, fluorometry, liquid crystal beads, infra-red thermography and bubble size thermometry. We compare the results of these techniques with respect to the influences of voltage, electric conductivity of buffer, frequency, cage size and electrode surface. We conclude that in the culture medium thermal effects may be neglected if low voltages and an electric field-reducing phase pattern are used. Our experimental results provide explicit values for estimating the thermal effect on dielectrophoretically caged cells and show that Joule heating is best minimized by optimizing the cage geometry and reducing the buffer conductivity. The results may additionally serve to evaluate and improve theoretical predictions on field-induced effects. Based on present-day chip processing possibilities, DEP is well suited for the manipulation of cells

TNS superconducting ohmic-heating system

International Nuclear Information System (INIS)

Wang, S.T.; Fuja, R.; Kim, S.H.; Kustom, R.L.; Praeg, W.F.; Thompson, K.; Turner, L.R.

1978-01-01

The superconducting ohmic-heating (OH) system is the selected design for the General Atomics Co./Argonne National Laboratory TNS tokamak design studies. The key features of the OH system design are: (1) parallel coil connection, (2) better utilization of flux core by embedding support cylinder of the toroidal-field coil within the OH inner radius, (3) independent trim coils for correcting the stray fields, (4) low-loss high-current cryostable cable design and (5) OH coil cycling circuit using a reversing bridge. Detailed designs are presented

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Laser cladding of copper with molybdenum for wear resistance enhancement in electrical contacts

International Nuclear Information System (INIS)

Ng, K.W.; Man, H.C.; Cheng, F.T.; Yue, T.M.

2007-01-01

Laser cladding of Mo on Cu has been attempted with the aim of enhancing the wear resistance and hence increasing the service life of electrical contacts made of Cu. In order to overcome the difficulties arising from the large difference in thermal properties and the low mutual solubility between Cu and Mo, Ni was introduced as an intermediate layer between Mo and Cu. The Ni and Mo layers were laser clad one after the other to form a sandwich layer of Mo/Ni/Cu. Excellent bonding between the clad layer and the Cu substrate was ensured by strong metallurgical bonding. The hardness of the surface of the clad layer is seven times higher than that of the Cu substrate. Pin-on-disc wear tests consistently showed that the abrasive wear resistance of the clad layer was also improved by a factor of seven as compared with untreated Cu substrate. The specific electrical contact resistance of the clad surface was about 5.6 x 10 -7 Ω cm 2

Methicillin resistance of airborne coagulase-negative staphylococci in homes of persons having contact with a hospital environment.

Science.gov (United States)

Lis, Danuta O; Pacha, Jerzy Z; Idzik, Danuta

2009-04-01

The persons having contact with a hospital environment (hospital personnel workers and discharged patients) are highly exposed to colonization with multidrug-resistant bacteria. The aim of this study was to evaluate the airborne Staphylococcus genus features in homes in which inhabitants have had contact with the hospital environment. Airborne bacteria were collected using a 6-stage Anderson impactor. The Staphylococcus species composition and resistance to methicillin, and other antimicrobial agents among 3 coagulase-negative staphylococci (CNS) species (S cohnii spp cohnii, S epidermidis, S hominis), were determined. Antibiotic resistance of isolates was tested using the agar screen method with methicillin, the polymerase chain reaction technique to detect the mecA gene, and the disk diffusion method. A higher prevalence of methicillin-resistant (MR) strains among the species isolated (40% of S epidermidis, 40% of S hominis, and 60% of S cohnii spp cohnii) was found in homes of persons who had contact with a hospital environment compared with the reference homes (only 12% of S hominis). The mecA gene was revealed in all MR S epidermidis strains and in some MR S hominis (50%) and S cohnii spp cohnii (33%) strains. All isolated MR CNS strains were susceptible to vancomycin, rifampicin, and linezolid. High numbers of airborne multidrug-resistant MR CNS in the homes of persons having contact with a hospital environment indicates that such inhabitants pose a risk of intrafamilial spreading of MR strains via air.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

Science.gov (United States)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Effects of the ohmic current on collective scattering spectra

International Nuclear Information System (INIS)

Castiglioni, S.; Lontano, M.; Tartari, U.

1993-01-01

A numerical and analytical study of the modifications induced in the collective scattering spectra by the ohmic current governing the equilibrium magnetic configuration in toroidal plasmas is presented. The spectral density function is calculated assuming equilibrium distributions for the (bulk and impurity) ion species and a Spitzer-like distribution to describe the response of the electrons to the applied DC electric field. As expected, the spectral asymmetries can be non-negligibly enhanced in the region of the ion-acoustic frequency. They reach their maxima for tangential scattering geometries, where the magnetic effects on the spectra are negligible. This justifies the assumption of the non-magnetized spectra. A theoretically motivated potential is shown to exist for a more detailed experimental investigation of the feasibility of current-density measurements in ohmic plasmas, based on collective scattering. (author)

3D Modeling and Testing of Contact Problems in Resistance Welding

DEFF Research Database (Denmark)

Nielsen, Chris Valentin

A generic, electro-thermo-mechanically coupled finite element program is developed for three-dimensional simulation of resistance welding. The developed computer program has reached a level of a complete standalone software that can be utilized as a tool in the analysis of resistance welding...... of resistance welding processes, which cover a wide range of spot welding and projection welding applications. Three-dimensional simulation of spot welding enables the analysis of critical effects like electrode misalignment and shunt effects between consecutive spots. A single-sided spot welding case involving...... three-dimensional contact is also presented. This case was suggested by and discussed with a German steel manufacturer. When it comes to projection welding, a natural need for three-dimensional analysis arises in many cases because of the involved geometries. Cross-wire welding and welding of square...

Pasteurization of citrus juices with ohmic heating to preserve the carotenoid profile

OpenAIRE

Achir , Nawel; Dhuique-Mayer , Claudie; Hadjal , Thiziri; Madani , Khodir; Pain , Jean-Pierre; Dornier , Manuel

2016-01-01

International audience; This study was carried out to assess, for the first time, the effect of ohmic heating on the carotenoid profile of two citrus fruit juices: grapefruit and blood orange. Two heat treatments were designed to obtain pasteurization values of 50 and 150 min (Tref= 70°C and z-value=10°C) with ohmic heating as compared to conventional heating. The results showed that xanthophyll losses could reach 70% for epoxyxanthophylls (cis-violaxanthin and cis-antheraxanthin) and 40% for...

Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

KAUST Repository

Bahabry, Rabab R; Hanna, Amir N; Kutbee, Arwa T; Gumus, Abdurrahman; Hussain, Muhammad Mustafa

2018-01-01

the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2

Transport analysis of ohmic, L-mode and improved confinement discharges in FTU

Energy Technology Data Exchange (ETDEWEB)

Esposito, B [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Marinucci, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Romanelli, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Bracco, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Castaldo, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cocilovo, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Giovannozzi, E [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Leigheb, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Monari, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Nowak, S [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Sozzi, C [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Tudisco, O [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cesario, R [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Frigione, D [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Gormezano, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Granucci, G [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Panaccione, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pericoli-Ridolfini, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pieroni, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy)

2004-11-01

A thorough investigation of confinement in Frascati Tokamak Upgrade has been carried out on a new database of ohmic, L-mode and advanced scenario discharges (multiple pellet-fuelled, radiation improved and internal transport barriers (ITBs)) obtained with the available auxiliary heating systems, namely electron cyclotron resonant heating, lower hybrid and ion Bernstein wave. A general agreement of the measured {tau}{sub E} with ITER97 L-mode scaling is found in ohmic and L-mode discharges. An improvement of the energy confinement time ({tau}{sub E}) of up to about 60% over the ITER97 L-mode scaling has been obtained in ITB discharges, together with a reduction in local electron transport in the region of high pressure gradient, and up to about 30% in pellet-fuelled discharges (where {tau}{sub E} as large as {approx}120 ms have been reached). The linear density dependence of {tau}{sub E} in ohmic discharges has been found to extend above the saturation density threshold in pellet-fuelled plasmas.

Transport and turbulence in TORE SUPRA ohmic discharges

International Nuclear Information System (INIS)

Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

1992-01-01

The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation. The present study is an analysis of a set of ohmic discharges in Tore Supra with I p =1.6 MA, B=4 T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10 19 m -3 . For these plasma parameters, the energy confinement time given by magnetic measurements saturates for e > ≥ 2.5 10 19 m -3 . It is emphasized here that the onset of ionic turbulence is unlikely in Tore Supra. This conclusion relies on a transport analysis and turbulence measurements by CO 2 laser scattering, whose results are presented in this paper

Cross-bidge Kelvin resistor (CBKR) structures for measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Boksteen, B.K.; Boksteen, B.K.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2007-01-01

A convenient test structure for measurement of the specific contact resistance (�?c) of metal-semiconductor junctions is the CBKR structure. During last few decades the parasitic factors which may strongly affect the measurements accuracy for �?c < 10-6 Ω • cm2 have been sufficiently discussed and

Effects of Ohmic Heating on Microbial Counts and Denaturatiuon of Proteins in Milk

OpenAIRE

SUN, Huixian; KAWAMURA, Shuso; HIMOTO, Jun-ichi; ITOH, Kazuhiko; WADA, Tatsuhiko; KIMURA, Toshinori

2008-01-01

The aim of this study was to compare the inactivation effects of ohmic heating (internal heating by electric current) and conventional heating (external heating by hot water) on viable aerobes and Streptococcus thermophilus 2646 in milk under identical temperature history conditions. The effects of the two treatments on quality of milk were also compared by assessing degrees of protein denaturation in raw and sterilized milk (raw milk being sterilized by ohmic heating or conventional heating)...

Schottky contacts to In2O3

Directory of Open Access Journals (Sweden)

H. von Wenckstern

2014-04-01

Full Text Available n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni_2Si formation and the resulting barrier height changes

International Nuclear Information System (INIS)

Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

2017-01-01

Highlights: • Schottky behavior (Φ_B = 0.41 eV) and Fermi level pining were found pre annealing. • Ni_2Si formation was confirmed for 5 min at 850 °C. • 3C/Ni_2Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni_2Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni_2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

2018-01-15

An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Theoretical scaling law for ohmically heated tokamaks

International Nuclear Information System (INIS)

Minardi, E.

1981-06-01

The electrostatic drift instability arising from the reduction of shear damping, due to toroidal effects, is assumed to be the basic source of the anomalous electron transport in tokamaks. The Maxwellian population of electrons constitutes a medium whose adiabatic nonlinear reaction to the instability (described in terms of an effective dielectric constant of the medium) determines the stationary electrostatic fluctuation level in marginally unstable situations. The existence of a random electrostatic potenial implies a fluctuating current of the Maxwellian electrons which creates a random magnetic field and a stocasticization of a magnetic configuration. The application of recent results allows the calculation of the realted radial electron transport. It is found that the confinement time under stationary ohmic conditions scales as n Tsub(i)sup( - 1/2) and is proportional roughly to the cube of the geometric dimenisions. Moreover, it is deduced that the loop voltage is approximateley the same for all tokamaks, irrespective of temperature and density and to a large extent, also of geometrical conditions. Thes results are characteristic of the ohmic stationary regime and can hardly be extrapolated to order heating regimes. (orig.)

Thermal contact resistance measurement of conduction cooled binary current lead joint block in cryocooler based self field I-V characterization facility

Energy Technology Data Exchange (ETDEWEB)

Kundu, Ananya, E-mail: ananya@ipr.res.in; Das, Subrat Kumar; Agarwal, Anees Bano Pooja; Pradhan, Subrata [Institute for Plasma Research, Bhat, Gandhinagar, Gujarat 382428 (India)

2016-05-23

In the present study thermal resistance of conduction cooled current lead joint block employing two different interfacial material namely AlN sheet and Kapton Film have been studied in the temperature range 5K-35K. In each case, the performance of different interlayer materials e.g. Indium foil for moderately pressurized contacts (contact pressure <1 MPa), and Apiezon N Grease, GE varnish for low pressurized contact (contact pressure <1 MPa) is studied. The performances of AlN joint with Indium foil and with Apeizon N Grease are studied and it is observed that the contact resistance reduces more with indium foil as compared to greased contact. The contact resistance measurements of Kapton film with Apiezon N grease and with GE varnish were also carried out in the same temperature range. A comparative study of AlN joint with Indium foil and Kapton with GE varnish as filler material is carried out to demonstrate better candidate material among Kapton and AlN for a particular filler material in the same temperature range.

Single-Molecule Transport at a Rectifying GaAs Contact.

Science.gov (United States)

Vezzoli, Andrea; Brooke, Richard J; Ferri, Nicolò; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

2017-02-08

In most single- or few-molecule devices, the contact electrodes are simple ohmic resistors. Here we describe a new type of single-molecule device in which metal and semiconductor contact electrodes impart a function, namely, current rectification, which is then modified by a molecule bridging the gap. We study junctions with the structure Au STM tip/X/n-GaAs substrate, where "X" is either a simple alkanedithiol or a conjugated unit bearing thiol/methylthiol contacts, and we detect current jumps corresponding to the attachment and detachment of single molecules. From the magnitudes of the current jumps we can deduce values for the conductance decay constant with molecule length that agree well with values determined from Au/molecule/Au junctions. The ability to impart functionality to a single-molecule device through the properties of the contacts as well as through the properties of the molecule represents a significant extension of the single-molecule electronics "tool-box".

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

Directory of Open Access Journals (Sweden)

Florent Ravaux

2017-06-01

Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

A study on the electronic and interfacial structures of monolayer ReS2-metal contacts.

Science.gov (United States)

Wang, Jin; Yang, Guofeng; Sun, Rui; Yan, Pengfei; Lu, Yanan; Xue, Junjun; Chen, Guoqing

2017-10-11

In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the top-contact formed by the monolayer ReS 2 (mReS 2 ) and metals (gold, silver, platinum, nickel, titanium, and scandium) by means of first-principles density functional theory calculations. We investigate the potential barrier, charge transfer and atomic orbital overlap at the mReS 2 -metal interface in consideration of van der Waals forces to understand how efficiently carriers could be injected from the metal contact to the mReS 2 channel. ReS 2 is physisorbed on Au and Ag, which leads to little perturbation of its electronic structures and forms a larger Schottky contact and a higher tunnel barrier at the interface. ReS 2 is chemisorbed on Ti and Sc, where the bonding strongly perturbs the electronic structures and is found to be purely Ohmic. The bonding of ReS 2 on Pt and Ni lies between these two extreme cases, demonstrating an intermediate behavior. These findings not only provide an insight into the mReS 2 -metal interfaces but may also prove to be instrumental in the future design of ReS 2 -based devices with good performance.

Series Resistance Analysis of Passivated Emitter Rear Contact Cells Patterned Using Inkjet Printing

Directory of Open Access Journals (Sweden)

Martha A. T. Lenio

2012-01-01

Full Text Available For higher-efficiency solar cell structures, such as the Passivated Emitter Rear Contact (PERC cells, to be fabricated in a manufacturing environment, potentially low-cost techniques such as inkjet printing and metal plating are desirable. A common problem that is experienced when fabricating PERC cells is low fill factors due to high series resistance. This paper identifies and attempts to quantify sources of series resistance in inkjet-patterned PERC cells that employ electroless or light-induced nickel-plating techniques followed by copper light-induced plating. Photoluminescence imaging is used to determine locations of series resistance losses in these inkjet-patterned and plated PERC cells.

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

International Nuclear Information System (INIS)

Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

2011-01-01

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni{sub 2}Si formation and the resulting barrier height changes

Energy Technology Data Exchange (ETDEWEB)

Tengeler, Sven, E-mail: stengeler@surface.tu-darmstadt.de [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Kaiser, Bernhard [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Chaussende, Didier [Univ. Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble (France); Jaegermann, Wolfram [Institute of Material Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2017-04-01

Highlights: • Schottky behavior (Φ{sub B} = 0.41 eV) and Fermi level pining were found pre annealing. • Ni{sub 2}Si formation was confirmed for 5 min at 850 °C. • 3C/Ni{sub 2}Si Fermi level alignment is responsible for ohmic contact behavior. • Wet chemical etching (Si–OH/C–H termination) does not impair Ni{sub 2}Si formation. - Abstract: The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni{sub 2}Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistors

International Nuclear Information System (INIS)

Lee, Sunghwan; Park, Hongsik; Paine, David C.

2012-01-01

The effect of contact resistance on the measurement of the field effect mobility of compositionally homogeneous channel indium zinc oxide (IZO)/IZO metallization thin film transistors (TFTs) is reported. The TFTs studied in this work operate in depletion mode as n-channel field effect devices with a field effect mobility calculated in the linear regime (μ FE ) of 20 ± 1.9 cm 2 /Vs and similar of 18 ± 1.3 cm 2 /Vs when calculated in the saturation regime (μ FE sat ). These values, however, significantly underestimate the channel mobility since a large part of the applied drain voltage is dropped across the source/drain contact interface. The transmission line method was employed to characterize the contact resistance and it was found that the conducting-IZO/semiconducting-IZO channel contact is highly resistive (specific contact resistance, ρ C > 100 Ωcm 2 ) and, further, this contact resistance is modulated with applied gate voltage. Accounting for the contact resistance (which is large and modulated by gate voltage), the corrected μ FE is shown to be 39 ± 2.6 cm 2 /Vs which is consistent with Hall mobility measurements of high carrier density IZO.

The ohmic heating power supply for HL-1 tokamak

International Nuclear Information System (INIS)

Mingrui, Z.; Jiashun, C.

1986-01-01

A combination of capacitor banks, inductor and DC Fly wheel-Generator sets are used as ohmic heating power supply (OHPS) for HL-1, which is the largest tokamak in China. This system can give changeable waveform of current in a simple way, because of the use of protection for capacitor banks by changeable connection in easy way. Since the technology of forced zero current in the commutating breaker and synchronous self-triggering crowbar are used, the smooth conversion between the wave front provided by discharge of the capacitor banks and the flat top sustained by the inductor and flywheel realized. The performance of the system was tested by a dummy load and the system has been used in the HL-1 experiments. It is confirmed that this system is sufficiently available for the ohmic heating and has important effects on the long plasma lasting time on the order of 1 sec

Investigation of the density turbulence in ohmic ASDEX plasmas

International Nuclear Information System (INIS)

Dodel, G.; Holtzhauer, E.

1989-01-01

A 119 μm homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs

Investigation of the density turbulence in ohmic ASDEX plasmas

Energy Technology Data Exchange (ETDEWEB)

Dodel, G; Holtzhauer, E [Stuttgart Univ. (Germany, F.R.). Inst. fuer Plasmaforschung; Giannone, L.; Niedermeyer, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)

1989-01-01

A 119 {mu}m homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs.

Parametric studies in ohmically heated plasmas in Heliotron E

International Nuclear Information System (INIS)

Mutoh, T.; Besshou, S.; Ijiri, Y.

1983-01-01

Parametric studies of volume averaged electron temperature and global electron energy confinement time /tau/epsilon /SUB e/ of ohmically heated Heliotron E plasmas have been performed using a data acquisition computer system. The scaling laws α (I /SUB OH/ x B/n /SUB e/) /SUP 1/2/ and /tau/epsilon /SUB e/ α n /SUP -1/2/ /SUB e/ x B/I /SUP 3/2/ /SUB OH/ are obtained directly by a code which fits the exponents of the plasma parameters ponents of the plasma parameters to the electron temperature and confinement time. The ohmically heated plasma confinement time /tau/epsilon /SUB e/ is shown to be related to the drift parameters xi (= V /SUB De/ /V /SUB Te/). The dependences of the energy confinement time on other plasma parameters is also presented. An investigation is made of the correlation between MHD activity and the confinement

Application Of Artificial Neural Networks In Modeling Of Manufactured Front Metallization Contact Resistance For Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Musztyfaga-Staszuk M.

2015-09-01

Full Text Available This paper presents the application of artificial neural networks for prediction contact resistance of front metallization for silicon solar cells. The influence of the obtained front electrode features on electrical properties of solar cells was estimated. The front electrode of photovoltaic cells was deposited using screen printing (SP method and next to manufactured by two methods: convectional (1. co-fired in an infrared belt furnace and unconventional (2. Selective Laser Sintering. Resistance of front electrodes solar cells was investigated using Transmission Line Model (TLM. Artificial neural networks were obtained with the use of Statistica Neural Network by Statsoft. Created artificial neural networks makes possible the easy modelling of contact resistance of manufactured front metallization and allows the better selection of production parameters. The following technological recommendations for the screen printing connected with co-firing and selective laser sintering technology such as optimal paste composition, morphology of the silicon substrate, co-firing temperature and the power and scanning speed of the laser beam to manufacture the front electrode of silicon solar cells were experimentally selected in order to obtain uniformly melted structure well adhered to substrate, of a small front electrode substrate joint resistance value. The prediction possibility of contact resistance of manufactured front metallization is valuable for manufacturers and constructors. It allows preserving the customers’ quality requirements and bringing also measurable financial advantages.

Effect of electroless nickel on the series resistance of high-efficiency inkjet printed passivated emitter rear contacted solar cells

Energy Technology Data Exchange (ETDEWEB)

Lenio, Martha A.T. [REC Technology US, Inc., 1159 Triton Dr., Foster City, CA 94301 (United States); Lennon, A.J.; Ho-Baillie, A.; Wenham, S.R. [ARC Photovoltaics Centre of Excellence, University of NSW, Sydney, NSW 2052 (Australia)

2010-12-15

Many existing and emerging solar cell technologies rely on plated metal to form the front surface contacts, and aluminium to form the rear contact. Interactions between the metal plating solutions and the aluminium rear can have a significant impact on cell performance. This paper describes non-uniform nickel deposition on the sintered aluminium rear surface of passivated emitter and rear contacted (PERC) cells patterned using an inkjet printing technique. Rather than being plated homogeneously over the entire rear surface as is observed on an alloyed aluminium rear, the nickel is plated only in the vicinity of the point openings in the rear surface silicon dioxide dielectric layer. Furthermore, this non-uniform nickel deposition was shown to increase the contact resistance of the rear point contacts by an order of magnitude, resulting in higher series resistance values for these fabricated PERC cells. (author)

High performance MoS2 TFT using graphene contact first process

Directory of Open Access Journals (Sweden)

Chih-Shiang Chang Chien

2017-08-01

Full Text Available An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS. Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vgcontact can achieve lower off current by lowering the Fermi level. To further improve the performance of MoS2 TFT, a new method using graphene contact first and MoS2 layer last process that can avoid PMMA residue and high processing temperature is applied. MoS2 TFT using this method shows on/off current ratio up to 6×106 order of magnitude, high mobility of 116 cm2/V-sec, and subthreshold swing of only 0.515 V/dec.

Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

International Nuclear Information System (INIS)

Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P

2004-01-01

Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z eff . Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values

Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

Energy Technology Data Exchange (ETDEWEB)

Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

2004-09-01

Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z{sub eff}. Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values.

Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

International Nuclear Information System (INIS)

Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

2001-01-01

An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 =53 cm, a l =22 cm - circular limiter configuration, B t ≤0.7T, I p ≤175 kA, ≤6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r=0.5a and r=0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0 % and β N of 2 were achieved. The β N limit achieved is 'soft' (nondisruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

International Nuclear Information System (INIS)

Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

1999-01-01

An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 = 53 cm, a l = 22 cm - circular limiter configuration, B t ≤ 0.7 T, I p ≤ 175 kA, ≤ 6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r = 0.5a and r = 0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0% and β N of 2 were achieved. The β N limit achieved is 'soft' (non-disruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

Contact-free sheet resistance determination of large area graphene layers by an open dielectric loaded microwave cavity

International Nuclear Information System (INIS)

Shaforost, O.; Wang, K.; Adabi, M.; Guo, Z.; Hanham, S.; Klein, N.; Goniszewski, S.; Gallop, J.; Hao, L.

2015-01-01

A method for contact-free determination of the sheet resistance of large-area and arbitrary shaped wafers or sheets coated with graphene and other (semi) conducting ultrathin layers is described, which is based on an open dielectric loaded microwave cavity. The sample under test is exposed to the evanescent resonant field outside the cavity. A comparison with a closed cavity configuration revealed that radiation losses have no significant influence of the experimental results. Moreover, the microwave sheet resistance results show good agreement with the dc conductivity determined by four-probe van der Pauw measurements on a set of CVD samples transferred on quartz. As an example of a practical application, correlations between the sheet resistance and deposition conditions for CVD graphene transferred on quartz wafers are described. Our method has a high potential as measurement standard for contact-free sheet resistance measurement and mapping of large area graphene samples

Mechanical Contact Experiments and Simulations

DEFF Research Database (Denmark)

Nielsen, Chris Valentin; Martins, P; Zhang, W.

2011-01-01

Mechanical contact is studied under dynamic development by means of a combined numerical and experimental investigation. The experiments are designed to allow dynamical development of non-planar contact areas with significant expansion in all three directions as the load is increased. Different....... The overall investigation serves for testing and validating the numerical implementation of the mechanical contact, which is one of the main contributions to a system intended for 3D simulation of resistance welding. Correct modelling of contact between parts to be welded, as well as contact with electrodes......, is crucial for satisfactory modelling of the resistance welding process. The resistance heating at the contact interfaces depends on both contact area and pressure, and as the contact areas develop dynamically, the presented tests are relevant for assessing the validity and accuracy of the mechanical contact...

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

Optimization of transition-metal dichalcogenides based field-effecttransistors via contact engineering

Science.gov (United States)

Perera, Meeghage Madusanka

Layered transition Metal Dichalcogenides (TMDs) have demonstrated a wide range of remarkable properties for applications in next generation nano-electronics. These systems have displayed many "graphene-like" properties including a relatively high carrier mobility, mechanical flexibility, chemical and thermal stability, and moreover offer the significant advantage of a substantial band gap. However, the fabrication of high performance field-effect transistors (FETs) of TMDs is challenging mainly due to the formation of a significant Schottky barrier at metal/TMD interface in most cases. The main goal of this study is to develop novel contact engineering strategies to achieve low-resistance Ohmic contacts. Our first approach is to use Ionic Liquid (IL) gating of metal contacted MoS2 FETs to achieve highly transparent tunneling contacts due to the strong band banding at metal/MoS2 interface. The substantially reduced contact resistance in ionic-liquid-gated bilayer and few-layer MoS 2 FETs results in an ambipolar behavior with high ON/OFF ratios, a near-ideal subthreshold swing, and significantly improved field-effect mobility. Remarkably, the mobility of a 3-nm-thick MoS2 FET with an IL gate was found to increase from ˜ 100 cm2V-1s-1 to ˜ 220 cm2V-1s-1 as the temperature decreased from 180 K to 77 K. This finding is in quantitative agreement with the true channel mobility measured by four-terminal measurement, suggesting that the mobility is predominantly limited by phonon-scattering. To further improve the contacts of TMD devices, graphene was used as work function tunable electrodes. In order to achieve low Schottky barrier height, both IL gating and surface charge transfer doping were used to tune the work function of graphene electrodes close to the conduction band edge of MoS 2. As a result, the performance of our graphene contacted MoS2 FETs is limited by the channel rather than contacts, which is further verified by four-terminal measurements. Finally

Energy balance in the ohmically heated FT

International Nuclear Information System (INIS)

Bartiromo, R.; Brusati, M.; Cilloco, F.

1981-01-01

A typical discharge in the FT Tokamak at 60 kG has been studied in detail in order to derive the power balance between the ohmic input and the plasma losses. Impurity and radiation losses together with ion and electron energy balance are discussed. A power transport term for electrons is derived which is ascribed to anomalous thermal conduction. This resulting thermal transport is compared with those derived from different proposed scalings

Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

Energy Technology Data Exchange (ETDEWEB)

Vecchiola, Aymeric [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Concept Scientific Instruments, ZA de Courtaboeuf, 2 rue de la Terre de Feu, 91940 Les Ulis (France); Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Chrétien, Pascal; Schneegans, Olivier; Mencaraglia, Denis; Houzé, Frédéric, E-mail: frederic.houze@geeps.centralesupelec.fr [Laboratoire de Génie électrique et électronique de Paris (GeePs), UMR 8507 CNRS-CentraleSupélec, Paris-Sud and UPMC Universities, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette (France); Delprat, Sophie [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); UPMC, Université Paris 06, 4 place Jussieu, 75005 Paris (France); Bouzehouane, Karim; Seneor, Pierre; Mattana, Richard [Unité Mixte de Physique CNRS-Thales UMR 137, 1 avenue Augustin Fresnel, 91767 Palaiseau (France); Tatay, Sergio [Molecular Science Institute, University of Valencia, 46980 Paterna (Spain); Geffroy, Bernard [Lab. Physique des Interfaces et Couches minces (PICM), UMR 7647 CNRS-École polytechnique, 91128 Palaiseau (France); Lab. d' Innovation en Chimie des Surfaces et Nanosciences (LICSEN), NIMBE UMR 3685 CNRS-CEA Saclay, 91191 Gif-sur-Yvette (France); and others

2016-06-13

An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10 decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes.

Effect of indirect ohmic heating on quality of ready-to-eat pineapple packed in plastic pouch

Directory of Open Access Journals (Sweden)

Hoang Pham

2014-06-01

Full Text Available Ready-to-eat fruits packed in sealed containers are highly perishable due to their intrinsic characteristics and lack of full thermal process. Ohmic heating has the advantages of rapid liquid heating through electrical current. The aim of this research was to investigate the effect of indirect ohmic heating on pH, total soluble solids, polyphenol oxidase activity, color and texture of ready-to-eat pineapple packed in a polypropylene pouch with 1% calcium chloride and 0.3% ascorbic acid packing solution. The pre-packed sample in a pouch was placed in the ohmic heating jar filled with 0.5% sodium chloride ohmic heating solution which was then ohmic heated at different voltage gradients (20, 30, 40 V/cm, to different packing solution temperatures (60, 70, 80°C for 60s. Samples were kept at 4°C for quality measurement. It was found that browning index of ready-to-eat pineapple treated with 20 V/cm at 80°C, 30 V/cm at 70°C and 80°C, 40 V/cm at 80°C did not change during 12 days cold storage (p>0.05. Polyphenol oxidase was inactivated when the temperature of the pineapple was 62°C or higher. After 10 days at 4°C, the pineapple heated with 30 V/cm at 70°C had much higher firmness than the un-heated sample kept at the same storage condition. Indirect ohmic heating of pre-packed ready-to-eat pineapple in polypropylene pouch with 30 V/cm at 70°C packing solution temperature for 60s could be used as minimal heating methods to maintain the quality of ready-to-eat fruits in 12 days at 4°C.

Unexpected current lowering of Mg contact on SI-GaAs

International Nuclear Information System (INIS)

Dubecky, F.; Bohacek, F.; Sekacova, M.; Hubik, P.; Kindl, D.; Gombia, E.; Necas, V.

2016-01-01

Four SI-GaAs surface barrier diodes with different contact metallization and/or contact areas were prepared and characterized in terms of the I-V measurements. The possibility of tuning their performance has been demonstrated by virtue of the device engineering, involving a low work-function Mg metallization and manipulation of the contact area. A device with a remarkable current lowering, by almost two orders of magnitude with respect to the 'standard' sample, was prepared. Such a possibility opens new application choices for SI-GaAs not recognized before. We suggest its use, with appropriate metal contact/s, in devices with a low current at low-voltage requirements, such as photonic devices, photodiodes or different physical sensors. The reported data and evidence from the existing literature rule out the widely accepted mechanism of ohmic/bulk-limited and thermionic emission transport as general rules for the interpretation of the low-bias regime in SI-GaAs diodes. The strong blocking ability of the low work function Mg contact was attributed to the downwards band bending, near contact charge carriers accumulation and the corresponding lowering of the bulk SI-GaAs free carrier concentration. (authors)

Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

Science.gov (United States)

Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

2017-11-01

In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

KAUST Repository

Park, Woojin; Shaikh, Sohail F.; Min, Jungwook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad Mustafa

2018-01-01

an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width

Risk Factors for Carbapenemase-Producing Carbapenem-Resistant Enterobacteriaceae (CP-CRE) Acquisition Among Contacts of Newly Diagnosed CP-CRE Patients.

Science.gov (United States)

Schwartz-Neiderman, Anat; Braun, Tali; Fallach, Noga; Schwartz, David; Carmeli, Yehuda; Schechner, Vered

2016-10-01

OBJECTIVE Carbapenemase-producing carbapenem-resistant Enterobacteriaceae (CP-CRE) are extremely drug-resistant pathogens. Screening of contacts of newly identified CP-CRE patients is an important step to limit further transmission. We aimed to determine the risk factors for CP-CRE acquisition among patients exposed to a CP-CRE index patient. METHODS A matched case-control study was performed in a tertiary care hospital in Israel. The study population was comprised of patients who underwent rectal screening for CP-CRE following close contact with a newly identified CP-CRE index patient. Cases were defined as positive tests for CP-CRE. For each case patient, 2 matched controls were randomly selected from the pool of contacts who tested negative for CP-CRE following exposure to the same index case. Bivariate and multivariate analyses were conducted using conditional logistic regression. RESULTS In total, 53 positive contacts were identified in 40 unique investigations (896 tests performed on 735 contacts) between October 6, 2008, and June 7, 2012. bla KPC was the only carbapenemase identified. In multivariate analysis, risk factors for CP-CRE acquisition among contacts were (1) contact with an index patient for ≥3 days (odds ratio [OR], 9.8; 95% confidence interval [CI], 2.0-48.9), (2) mechanical ventilation (OR, 4.1; 95% CI, 1.4-11.9), and (3) carriage or infection with another multidrug-resistant organism (MDRO; OR, 2.6; 95% CI, 1.0-7.1). Among patients who received antibiotics, cephalosporins were associated with a lower risk of acquisition. CONCLUSIONS Patient characteristics (ventilation and carriage of another MDRO) as well as duration of contact are risk factors for CP-CRE acquisition among contacts. The role of cephalosporins requires further study. Infect Control Hosp Epidemiol 2016;1-7.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Directory of Open Access Journals (Sweden)

Tejinder Singh

2014-01-01

Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

Science.gov (United States)

Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

2015-02-01

To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

Ohmic Treatment of Pear Purées (cv. ‘Conference’ in Terms of Some Quality Related Attributes

Directory of Open Access Journals (Sweden)

Oana Viorela NISTOR

2015-06-01

Full Text Available The effect of ohmic treatment on some quality related characteristics of pear purée (cv. ‘Conference’ such as color, reducing sugars, total phenols, rheological behavior and microbial counts, was analyzed. The inactivation kinetics of pectin methyl esterase (PME in pear crude extract and purée were studied by conventional thermal and ohmic treatments. Thermal inactivation of PME in crude extract was described by a first-order kinetic model. The activation energy values suggested the presence of two isoenzymes with different thermostability. The ohmic heating reduced PME activity by 96% at 25 V·cm-1. Minimal changes induced by ohmic heating on above quality related aspects were observed. Supporting this statement, there were no significant changes in the nutritional and sensorial attributes. It was reported an increase of 3% of reducing sugar content for the ohmic heated samples. The phenolic content of the treated samples registered a reduction of 59% in comparison with fresh pear purée. The pear purée presented a non-Newtonian pseudoplastic behaviour. The Ostwald de Waele model was fitted to rheograms and the consistency coefficient (m and flow behavior index (n were determined. Results obtained for the microbial charge were higher in the control samples. Thus, microbial counts showed complete inactivation of yeast and mold at voltage gradient higher than 17.5 V·cm-1.

Coordinate transformation in the model of long Josephson contacts: geometrically equivalent contacts

International Nuclear Information System (INIS)

Semerdzhieva, E.G.; Boyadzhiev, T.L.; ); Shukrinov, Yu.M.; Physical Technical Institute Dushanbe, 734063

2005-01-01

The transition from model of long Josephson variable-width contact to the contact model with coordinate-dependent Josephson current amplitude is realized by transforming the coordinates. This sets up a correspondence between Josephson contacts of variable width and quasi-one-dimensional contacts of variable thickness barrier layer. It is shown, that for contacts of exponentially varying width the barrier layer of the corresponding quasi-one-dimensional contact contains the distributed resistive inhomogeneity which is an attractor to magnetic flux vortices. With numerical experiments, a 'critical current-magnetic field' dependence for a resistive microinhomogeneity Josephson contact was plotted, and its comparison with the critical curve for a contact of exponentially varying width was made. Thus, this demonstrates that the distributed inhomogeneity may be replaced by a local one at the JC end what technologically, may offer definite advantages

Ohmic H-mode and confinement in TCV

International Nuclear Information System (INIS)

Moret, J.-M.; Anton, M.; Barry, S.

1995-01-01

The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

Science.gov (United States)

Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

2016-04-01

The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

Au/n-ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

Science.gov (United States)

Gu, Q. L.; Cheung, C. K.; Ling, C. C.; Ng, A. M. C.; Djurišić, A. B.; Lu, L. W.; Chen, X. D.; Fung, S.; Beling, C. D.; Ong, H. C.

2008-05-01

Au contacts were deposited on n-type ZnO single crystals with and without hydrogen peroxide pretreatment for the ZnO substrate. The Au/ZnO contacts fabricated on substrates without H2O2 pretreatment were Ohmic and those with H2O2 pretreatment were rectifying. With an aim of fabricating a good quality Schottky contact, the rectifying property of the Au/ZnO contact was systemically investigated by varying the treatment temperature and duration. The best performing Schottky contact was found to have an ideality factor of 1.15 and a leakage current of ˜10-7 A cm-2. A multispectroscopic study, including scanning electron microscopy, positron annihilation spectroscopy, deep level transient spectroscopy, x-ray photoelectron spectroscopy, and photoluminescence, showed that the H2O2 treatment removed the OH impurity and created Zn-vacancy related defects hence decreasing the conductivity of the ZnO surface layer, a condition favorable for forming good Schottky contact. However, the H2O2 treatment also resulted in a deterioration of the surface morphology, leading to an increase in the Schottky contact ideality factor and leakage current in the case of nonoptimal treatment time and temperature.

Serum vitamin d level and susceptibility to multidrug-resistant tuberculosis among household contacts

Science.gov (United States)

Herlina, N.; Sinaga, B. Y. M.; Siagian, P.; Mutiara, E.

2018-03-01

Low levels of vitamin D is a predisposing factor for Multidrug-resistant tuberculosis. Family members in contact with the patient are also at risk of infection. Currently, there is no study that compares vitamin D levels between MDR-TB patients and household contact. This study aims to identify the association between level vitamin D within MDR-TB occurrence. This was a case-control study, with the number of samples in each group (MDR-TB) patients and household contactswere40 people. Each member of each group was checked for vitamin D levels using enzyme-linked immunosorbent assay (ELISA) technique. Statistical analysis was by using Chi-Square analysis using SPSS. Mean levels of vitamin D in MDR-TB patients were 32.21, household contact 31.7. There was anosignificant association between vitamin D levels and MDR-TB occurrence (p=1.0).No significant associationbetween vitamin D level with theMDR-TB occurrence.

Optimized design of polarizers with low ohmic loss and any polarization state for the 28 GHz QUEST ECH/ECCD system

Energy Technology Data Exchange (ETDEWEB)

Tsujimura, Toru Ii, E-mail: tsujimura.tohru@nifs.ac.jp [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan); Idei, Hiroshi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Kubo, Shin; Kobayashi, Sakuji [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan)

2017-01-15

Highlights: • Ohmic loss was calculated on the grooved mirror surface in simulated polarizers. • Polarizers with a low ohmic loss feature were optimally designed for 28 GHz. • Smooth rounded-rectangular grooves were made by mechanical machining. • The designed polarizers can realize all polarization states. - Abstract: In a high-power long-pulse millimeter-wave transmission line for electron cyclotron heating and current drive (ECH/ECCD), the ohmic loss on the grooved mirror surface of polarizers is one of the important issues for reducing the transmission loss. In this paper, the ohmic loss on the mirror surface is evaluated in simulated real-scale polarizer miter bends for different groove parameters under a linearly-polarized incident wave excitation. The polarizers with low ohmic loss are optimally designed for a new 28 GHz transmission line on the QUEST spherical tokamak. The calculated optimum ohmic loss is restricted to only less than 1.5 times as large as the theoretical loss for a copper flat mirror at room temperature. The copper rounded-rectangular grooves of the polarizers were relatively easy to make smooth in mechanical machining and the resultant surface roughness was not more than 0.15 μm, which is only 0.38 times as large as the skin depth. The combination of the designed elliptical polarizer and the polarization rotator can also realize any polarization state of the reflected wave.

(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

Science.gov (United States)

Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

2017-04-01

The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

HAb18G/CD147 cell-cell contacts confer resistance of a HEK293 subpopulation to anoikis in an E-cadherin-dependent manner

Directory of Open Access Journals (Sweden)

Zhu Ping

2010-04-01

Full Text Available Abstract Background Acquisition of resistance to "anoikis" facilitates the survival of cells under independent matrix-deficient conditions, such as cells in tumor progression and the production of suspension culture cells for biomedical engineering. There is evidence suggesting that CD147, an adhesion molecule associated with survival of cells in tumor metastasis and cell-cell contacts, plays an important role in resistance to anoikis. However, information regarding the functions of CD147 in mediating cell-cell contacts and anoikis-resistance remains limited and even self-contradictory. Results An anoikis-resistant clone (HEK293ar, derived from anoikis-sensitive parental Human Embryonic Kidney 293 cells, survived anoikis by the formation of cell-cell contacts. The expression of HAb18G/CD147 (a member of the CD147 family was upregulated and the protein was located at cell-cell junctions. Upregulation of HAb18G/CD147 in suspended HEK293ar cells suppressed anoikis by mediating the formation of cell-cell adhesions. Anoikis resistance in HEK293ar cells also required E-cadherin-mediated cell-cell contacts. Knock-down of HAb18G/CD147 and E-cadherin inhibited cell-cell contacts formation and increased anoikis sensitivity respectively. When HAb18G/CD147 was downregulated, E-cadherin expression in HEK293ar cells was significantly suppressed; however, knockdown of E-cadherin by E-cadherin siRNA or blocking of E-cadherin binding activity with a specific antibody and EDTA had no significant effect on HAb18G/CD147 expression. Finally, pretreatment with LY294002, a phosphoinositide 3-kinase (PI3K/AKT inhibitor, disrupted cell-cell contacts and decreased cell number, but this was not the case in cells treated with the extracellular signal-regulated kinase (ERK inhibitor PD98059. Conclusions Our results provide new evidence that HAb18G/CD147-mediated cell-cell contact confers anoikis resistance in an E-cadherin-dependent manner; and cell-cell contact mediated

Noncontact sheet resistance measurement technique for wafer inspection

Science.gov (United States)

Kempa, Krzysztof; Rommel, J. Martin; Litovsky, Roman; Becla, Peter; Lojek, Bohumil; Bryson, Frank; Blake, Julian

1995-12-01

A new technique, MICROTHERM, has been developed for noncontact sheet resistance measurements of semiconductor wafers. It is based on the application of microwave energy to the wafer, and simultaneous detection of the infrared radiation resulting from ohmic heating. The pattern of the emitted radiation corresponds to the sheet resistance distribution across the wafer. This method is nondestructive, noncontact, and allows for measurements of very small areas (several square microns) of the wafer.

Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N

Science.gov (United States)

Lapeyrade, Mickael; Alamé, Sabine; Glaab, Johannes; Mogilatenko, Anna; Unger, Ralph-Stephan; Kuhn, Christian; Wernicke, Tim; Vogt, Patrick; Knauer, Arne; Zeimer, Ute; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael

2017-09-01

In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al0.75Ga0.25N layers, X-ray photoelectron spectroscopy analysis was performed on differently treated AlGaN:Si surfaces before metal deposition, and transmission electron microscopy was used to study the semiconductor-metal interface after contact annealing at 900 °C. Cl2 plasma etching of AlGaN increases the aluminum/nitrogen ratio at the surface, and Al oxide or oxynitride is always formed by any surface treatment applied after etching. After contact annealing, a complex interface structure including amorphous AlOx and different metal phases such as Al-Au-Ni, V-Al, and V2N were found. The electrical properties of the contacts were determined by thermionic emission and/or thermionic field emission in the low voltage regime. Nearly ohmic contacts on AlGaN surfaces exposed to a Cl2 plasma were only obtained by annealing the sample at a temperature of 815 °C under N2/NH3 prior to metallization. By this treatment, the oxygen contamination on the surface could be minimized, resulting in a larger semiconductor area to be in direct contact with metal phases such as Al-rich Al-Au-Ni or V-Al and leading to a contact resistivity of 2.5 × 10-2 Ω cm2. This treatment can be used to significantly reduce the operating voltage of current deep ultraviolet light emitting diodes which will increase their wall plug efficiency and lower the thermal stress during their operation.

Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

KAUST Repository

Debnath, Ratan

2010-01-01

With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface. © 2010 American Institute of Physics.

Compound sawtooth study in ohmically heated TFTR plasmas

International Nuclear Information System (INIS)

Yamada, H.; McGuire, K.; Colchin, D.

1985-09-01

Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters

Reduction of Ag–Si electrical contact resistance by selective RF heating

International Nuclear Information System (INIS)

De Wijs, W-J A; Ljevar, S; Van de Sande, M J; De With, G

2016-01-01

Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s −1 . Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates. (paper)

Space chamber experiments of ohmic heating by high power microwave from the solar power satellite

Energy Technology Data Exchange (ETDEWEB)

Kaya, N.; Matsumoto, H.

1981-12-01

It is quantitatively predicted that a high power microwave from the Solar Power Satellite (SPS) nonlinearly interacts with the ionospheric plasma. The possible nonlinear interactions are ohmic heating, self-focusing and parametric instabilities. A rocket experiment called MINIX (Microwave-Ionosphere Nonlinear Interaction Experiment) has been attempted to examine these effects, but is note reported here. In parallel to the rocket experiment, a laboratory experiment in a space plasma simulation chamber has been carried out in order to examine ohmic heating in detail and to develop a system of the rocket experiment. Interesting results were observed and these results were utilized to revise the system of the rocket experiments. A significant microwave heating of plasma up to 150% temperature increase was observed with little electron density decrease. It was shown that the temperature increase is not due to the RF breakdown but to the ohmic heating in the simulated ionospheric plasma. These microwave effects have to be taken into account in the SPS Project in the future.

An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

DEFF Research Database (Denmark)

Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

2016-01-01

Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Fokker-Planck equation of the reduced Wigner function associated to an Ohmic quantum Langevin dynamics

Science.gov (United States)

Colmenares, Pedro J.

2018-05-01

This article has to do with the derivation and solution of the Fokker-Planck equation associated to the momentum-integrated Wigner function of a particle subjected to a harmonic external field in contact with an ohmic thermal bath of quantum harmonic oscillators. The strategy employed is a simplified version of the phenomenological approach of Schramm, Jung, and Grabert of interpreting the operators as c numbers to derive the quantum master equation arising from a twofold transformation of the Wigner function of the entire phase space. The statistical properties of the random noise comes from the integral functional theory of Grabert, Schramm, and Ingold. By means of a single Wigner transformation, a simpler equation than that mentioned before is found. The Wigner function reproduces the known results of the classical limit. This allowed us to rewrite the underdamped classical Langevin equation as a first-order stochastic differential equation with time-dependent drift and diffusion terms.

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES

International Nuclear Information System (INIS)

Kawagoe, A.; Kawabata, Y.; Sumiyoshi, F.; Nagaya, S.; Hirano, N.

2006-01-01

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES coils were evaluated from a comparison between measured data and 2D-FEM analyses on interstrand coupling losses in these cables. The cables were composed of 30 non-twisted Bi-2212 strands with a diameter of 0.81 mm and a cable twist pitch of 90 mm. Three samples were measured; one of them had NiCr cores and the others had no cores. One of the latter two samples repeatedly experienced bending. The interstrand coupling losses were measured in liquid helium for the straight samples under transverse ac ripple magnetic fields superposed on dc bias magnetic fields. The transverse magnetic field was applied to the samples in directions both perpendicular and parallel to the flat face of the cable. The effect of the bending on the interstrand coupling losses could be neglected for the non-cored samples. The interstrand coupling losses of NiCr cored sample decreased by about 30% compared with the non-cored samples, in case the direction of the transverse magnetic fields applied to the cable is perpendicular to the flat face of the cable. Using these results and 2D-FEM analyses, taking into account that interstrand contact conditions vary from the center to the edge in the cross-section of cables, gave us the conclusion that the between side-by-side strands contact with metallurgical bond only in both edges of the cables

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES

Science.gov (United States)

Kawagoe, A.; Kawabata, Y.; Sumiyoshi, F.; Nagaya, S.; Hirano, N.

2006-10-01

Interstrand contact resistances of Bi-2212 Rutherford cables for SMES coils were evaluated from a comparison between measured data and 2D-FEM analyses on interstrand coupling losses in these cables. The cables were composed of 30 non-twisted Bi-2212 strands with a diameter of 0.81 mm and a cable twist pitch of 90 mm. Three samples were measured; one of them had NiCr cores and the others had no cores. One of the latter two samples repeatedly experienced bending. The interstrand coupling losses were measured in liquid helium for the straight samples under transverse ac ripple magnetic fields superposed on dc bias magnetic fields. The transverse magnetic field was applied to the samples in directions both perpendicular and parallel to the flat face of the cable. The effect of the bending on the interstrand coupling losses could be neglected for the non-cored samples. The interstrand coupling losses of NiCr cored sample decreased by about 30% compared with the non-cored samples, in case the direction of the transverse magnetic fields applied to the cable is perpendicular to the flat face of the cable. Using these results and 2D-FEM analyses, taking into account that interstrand contact conditions vary from the center to the edge in the cross-section of cables, gave us the conclusion that the between side-by-side strands contact with metallurgical bond only in both edges of the cables.

Physicochemical properties of masa and corn tortilla made by ohmic ...

African Journals Online (AJOL)

Instant corn flour obtained by ohmic heating (OHICF) was used to prepare masa and tortillas. In this study, the effect of average particle size, moisture, and the final temperature on the physicochemical properties of masa and tortillas elaborated from OHICF was evaluated and were compared with flour obtained by the ...

Preparation of electrodes on cfrp composites with low contact resistance comprising laser-based surface pre-treatment

KAUST Repository

Almuhammadi, Khaled Hamdan; Lubineau, Gilles; Alfano, Marco Francesco; Buttner, Ulrich

2016-01-01

Various examples are provided related to the preparation of electrodes on carbon fiber reinforced polymer (CFRP) composites with low contact resistance. Laser-based surface preparation can be used for bonding to CFRP composites. In one example, a

Resistivity switching properties of Li-doped ZnO films deposited on LaB_6 electrode

International Nuclear Information System (INIS)

Igityan, A.; Kafadaryan, Y.; Aghamalyan, N.; Petrosyan, S.; Badalyan, G.; Vardanyan, V.; Nersisyan, M.; Hovsepyan, R.; Palagushkin, A.; Kryzhanovsky, B.

2015-01-01

Current–voltage (I–V) characteristics of Al/p-ZnO:Li/LaB_6 device, measured in voltage sweep mode, show unipolar resistive switching and monostable threshold switching (URS and MTS) for different bias voltage polarities. URS could be transformed to MTS by application of reverse bias voltage. With increasing number of cycles, URS is converted to bipolar resistive switching mode which is lost after certain number of cycles, and device turns into an ordinary resistor. Analysis of linear fitting I–V curves suggests that ohmic and space charge limited current laws are responsible for conductivity mechanism of Al/p-ZnO:Li/LaB_6 device. - Highlights: • Al/p-ZnO:Li/LaB_6 memristive device is fabricated using an e-beam evaporation technique. • Current–voltage (I–V) characteristics are studied. • Type of resistive switching mode depends on the bias voltage polarity and number of switching cycles. • Resistive switching in Al/ZnO:Li/LaB_6 has an interfacial effect. • Ohmic and SCLC laws are responsible for conductivity mechanism of resistive states.

Lack of the purinergic receptor P2X7 results in resistance to contact hypersensitivity

Science.gov (United States)

Weber, Felix C.; Esser, Philipp R.; Müller, Tobias; Ganesan, Jayanthi; Pellegatti, Patrizia; Simon, Markus M.; Zeiser, Robert; Idzko, Marco; Jakob, Thilo

2010-01-01

Sensitization to contact allergens requires activation of the innate immune system by endogenous danger signals. However, the mechanisms through which contact allergens activate innate signaling pathways are incompletely understood. In this study, we demonstrate that mice lacking the adenosine triphosphate (ATP) receptor P2X7 are resistant to contact hypersensitivity (CHS). P2X7-deficient dendritic cells fail to induce sensitization to contact allergens and do not release IL-1β in response to lipopolysaccharide (LPS) and ATP. These defects are restored by pretreatment with LPS and alum in an NLRP3- and ASC-dependent manner. Whereas pretreatment of wild-type mice with P2X7 antagonists, the ATP-degrading enzyme apyrase or IL-1 receptor antagonist, prevents CHS, IL-1β injection restores CHS in P2X7-deficient mice. Thus, P2X7 is a crucial receptor for extracellular ATP released in skin in response to contact allergens. The lack of P2X7 triggering prevents IL-1β release, which is an essential step in the sensitization process. Interference with P2X7 signaling may be a promising strategy for the prevention of allergic contact dermatitis. PMID:21059855

Effects of clamping force on the water transport and performance of a PEM (proton electrolyte membrane) fuel cell with relative humidity and current density

International Nuclear Information System (INIS)

Cha, Dowon; Ahn, Jae Hwan; Kim, Hyung Soon; Kim, Yongchan

2015-01-01

The clamping force should be applied to a proton electrolyte membrane (PEM) fuel cell due to its structural characteristics. The clamping force affects the ohmic and mass transport resistances in the PEM fuel cell. In this study, the effects of the clamping force on the water transport and performance characteristics of a PEM fuel cell are experimentally investigated with variations in the relative humidity and current density. The water transport characteristics were analyzed by calculating the net drag coefficient. The ohmic resistance decreased with the increase in the clamping force due to the reduced contact resistance and more even membrane hydration. However, the mass transport resistance increased with the increase in the clamping force due to the gas diffusion layer compression. The net drag coefficient decreased with the increase in the clamping force due to high water back-diffusion. Additionally, the relationship between the total resistance and the net drag coefficient was investigated. - Highlights: • Effects of clamping force on the performance of a PEM fuel cell are investigated. • Water transport characteristics are analyzed using net drag coefficient. • Ohmic resistance decreased with clamping force, but mass transport resistance increased. • Net drag coefficient decreased with the increase in clamping force. • Total resistance was significantly degraded for a net drag coefficient below 0.2.

Radial profiles of neutron emission from ohmic discharges in JET

International Nuclear Information System (INIS)

Cheetham, A.; Gottardi, N.; Jarvis, O.N.

1989-01-01

Neutron emission profiles from several ohmically heated discharges have been studied using a variety of analytical techniques to extract the ion temperature profiles which are found to agree well, both in shape and magnitude, with the electron temperature profiles as measured by the LIDAR Thomson scattering diagnostic. (author) 7 refs., 3 figs

Real-time protection of the Ohmic heating coil force limits in DIII-D

International Nuclear Information System (INIS)

Broesch, J.D.; Scoville, J.T.; Hyatt, A.W.; Coon, R.M.

1997-11-01

The maximum safe operating limits of the DIII-D tokamak are determined by the force produced in the ohmic heating coil and the toroidal field coil during a plasma pulse. This force is directly proportional to the product of the current in the coils. Historically, the current limits for each coil were set statically before each pulse without regard for the time varying nature of the currents. In order to allow the full time-dependent capability of the ohmic coil to be used, a system was developed for monitoring the product of the currents dynamically and making appropriate adjustments in real time. This paper discusses the purpose, implementation, and results of this work

Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

Science.gov (United States)

Marra, Francesco

2014-01-01

Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

Vertical Soil Profiling Using a Galvanic Contact Resistivity Scanning Approach

Directory of Open Access Journals (Sweden)

Luan Pan

2014-07-01

Full Text Available Proximal sensing of soil electromagnetic properties is widely used to map spatial land heterogeneity. The mapping instruments use galvanic contact, capacitive coupling or electromagnetic induction. Regardless of the type of instrument, the geometrical configuration between signal transmitting and receiving elements typically defines the shape of the depth response function. To assess vertical soil profiles, many modern instruments use multiple transmitter-receiver pairs. Alternatively, vertical electrical sounding can be used to measure changes in apparent soil electrical conductivity with depth at a specific location. This paper examines the possibility for the assessment of soil profiles using a dynamic surface galvanic contact resistivity scanning approach, with transmitting and receiving electrodes configured in an equatorial dipole-dipole array. An automated scanner system was developed and tested in agricultural fields with different soil profiles. While operating in the field, the distance between current injecting and measuring pairs of rolling electrodes was varied continuously from 40 to 190 cm. The preliminary evaluation included a comparison of scan results from 20 locations to shallow (less than 1.2 m deep soil profiles and to a two-layer soil profile model defined using an electromagnetic induction instrument.

Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts

NARCIS (Netherlands)

Wong, P.K.J.; Zhang, W.; Zhang, W.; Xu, Y.B.

2010-01-01

Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the

A Pt/TiO(2)/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays.

Science.gov (United States)

Park, Woo Young; Kim, Gun Hwan; Seok, Jun Yeong; Kim, Kyung Min; Song, Seul Ji; Lee, Min Hwan; Hwang, Cheol Seong

2010-05-14

This study examined the properties of Schottky-type diodes composed of Pt/TiO(2)/Ti, where the Pt/TiO(2) and TiO(2)/Ti junctions correspond to the blocking and ohmic contacts, respectively, as the selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio of approximately 10(9) was achieved at 1 V when the TiO(2) film thickness was 19 nm. TiO(2) film was grown by atomic layer deposition at a substrate temperature of 250 degrees C. Conductive atomic force microscopy revealed that the forward current flew locally, which limits the maximum forward current density to current measurement showed a local forward current density as high as approximately 10(5) A cm(-2). Therefore, it is expected that this type of Schottky diode effectively suppresses the sneak current without adverse interference effects in a nano-scale resistive switching cross-bar array with high block density.

Scanning electrochemical microscopy for the fabrication of copper nanowires: Atomic contacts with quantized conductance, and molecular adsorption effect

International Nuclear Information System (INIS)

Janin, Marion; Ghilane, Jalal; Lacroix, Jean-Christophe

2012-01-01

Highlights: ► Electrochemistry and SECM to generate copper nanowires with quantized conductance. ► Stable atomic contacts lasting for several hundreds of seconds have been obtained. ► The quantized conductances are independent of the tip and gap size. ► The method allows contacts to be generated in the presence of chosen molecules. ► Four-electrode configuration opens the route to redox gated atomic contact. - Abstract: Scanning electrochemical microscopy, SECM, is proposed as a tool for the fabrication of copper nanowires. In a first step, configuration based on two electrodes, a platinum UME (cathode) and a copper substrate (anode), operating in the SECM configuration was employed. For nanowires generated in water the conductance changes stepwise and varies by integer values of the conductance quantum G 0 . The formation of atomic contacts is supported by the ohmic behavior of the I–V curve. It depends neither on the UME tip radius nor on the initial gap size between tip and substrate. Atomic contacts generated in aqueous solutions of sodium dodecyl sulfate (SDS) below the critical micellar concentration (CMC) have conductances below 1G 0 attributed to molecular adsorption on the contact. In some cases, the nanowires have low conductance, 0.01G 0 . The corresponding I–V curve shows tunneling rather than ohmic behavior, suggesting that molecular junctions are formed with a few surfactant molecules trapped between the two electrodes. Finally, copper nanowires with quantized conductance have been generated using the SECM operating in a four-electrode setup. Thanks to the reference electrode, this configuration leads to better control of the potential of each working electrode; this setup will make it possible to evaluate the conductance variation and/or modulation upon electrochemical stimuli.

Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films on LaNiO3-buffered Si substrates

International Nuclear Information System (INIS)

Chen Xinman; Zhang Hu; Ruan Kaibin; Shi Wangzhou

2012-01-01

Highlights: ► Annealing effect on the bipolar resistive switching behaviors of BiFeO 3 thin films with Pt/BiFeO 3 /LNO was reported. ► Rectification property was explained from the asymmetrical contact between top and bottom interfaces and the distinct oxygen vacancy density. ► The modification of Schottky-like barrier was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices. - Abstract: We reported the annealing effect on the electrical behaviors of BiFeO 3 thin films integrated on LaNiO 3 (LNO) layers buffered Si substrates by sol–gel spin-coating technique. All the BiFeO 3 thin films exhibit the reversible bipolar resistive switching behaviors with Pt/BiFeO 3 /LNO configuration. The electrical conduction mechanism of the devices was dominated by the Ohmic conduction in the low resistance state and trap-controlled space charged limited current in the high resistance state. Good diode-like rectification property was observed in device with BiFeO 3 film annealed at 500 °C, but vanished in device with BiFeO 3 film annealed at 600 °C. This was attributed to the asymmetrical contact between top and bottom interfaces as well as the distinct oxygen vacancy density verified by XPS. Furthermore, the modification of Schottky-like barrier due to the drift of oxygen vacancies was suggested to be responsible for the resistance switching behaviors of Pt/BiFeO 3 /LNO devices.

INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

International Nuclear Information System (INIS)

Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

2012-01-01

We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

Investigation of the Energy Confinement in Ohmic and LHCD Plasmas in HT-7

International Nuclear Information System (INIS)

Zhang Xiaoqing; Wan Baonian; Shen Biao; Hu Xiwei; Qian Jinping; Fan Hengyu; Ding Yonghua

2006-01-01

Investigation of the energy confinement in ohmic and lower hybrid current drive (LHCD) plasmas in HT-7 has been performed. In ohmic discharges at low densities the global energy confinement time τ E increases almost linearly with the density, saturates at a critical density (2.5 x 10 13 /cm 3 for HT-7) and is nearly constant at higher densities. The energy confinement time is in good agreement with the Neo-Alcator scaling law at different densities and currents. In the LHCD plasmas the global energy confinement time similar to that of the L-mode discharges has been observed to be in good agreement with the low confinement mode (L mode) scaling law of ITER89-P in higher electron density and plasma current

Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

Science.gov (United States)

Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D

2013-08-07

Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical Resistance Measurements and Microstructural Characterization of the Anode/Interconnect Contact in Simulated Anode-Side SOFC Conditions

DEFF Research Database (Denmark)

Harthøj, Anders; Alimadadi, Hossein; Holt, Tobias

2015-01-01

in phase transformation of the steel and in formation of oxides with a poor electrical conductivity in the anode. In this study, the area specific resistance (ASR) of the steel Crofer 22 APU, in contact with a Ni/YSZ anode with and without a tape casted CeO2 barrier layer was measured in simulated SOFC...... anode conditions at 800◦C. The microstructure in the contact area was characterized using scanning electron microscopy techniques. The ASR was low for the steel in direct contact with the Ni/YSZ anode. Nickel diffusion into the steel resulted in a fine grained zone, which was identified as ferrite...

Estimating the Contact Endurance of the AISI 321 Stainless Steel Under Contact Gigacycle Fatigue Tests

Science.gov (United States)

Savrai, R. A.; Makarov, A. V.; Osintseva, A. L.; Malygina, I. Yu.

2018-02-01

Mechanical testing of the AISI 321 corrosion resistant austenitic steel for contact gigacycle fatigue has been conducted with the application of a new method of contact fatigue testing with ultrasonic frequency of loading according to a pulsing impact "plane-to-plane" contact scheme. It has been found that the contact endurance (the ability to resist the fatigue spalling) of the AISI 321 steel under contact gigacycle fatigue loading is determined by its plasticity margin and the possibility of additional hardening under contact loading. It is demonstrated that the appearance of localized deep and long areas of spalling on a material surface can serve as a qualitative characteristic for the loss of the fatigue strength of the AISI 321 steel under impact contact fatigue loading. The value of surface microhardness measured within contact spots and the maximum depth of contact damages in the peripheral zone of contact spots can serve as quantitative criteria for that purpose.