WorldWideScience

Sample records for reliability electronics silicon

  1. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  2. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  3. Power electronics reliability analysis.

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Mark A.; Atcitty, Stanley

    2009-12-01

    This report provides the DOE and industry with a general process for analyzing power electronics reliability. The analysis can help with understanding the main causes of failures, downtime, and cost and how to reduce them. One approach is to collect field maintenance data and use it directly to calculate reliability metrics related to each cause. Another approach is to model the functional structure of the equipment using a fault tree to derive system reliability from component reliability. Analysis of a fictitious device demonstrates the latter process. Optimization can use the resulting baseline model to decide how to improve reliability and/or lower costs. It is recommended that both electric utilities and equipment manufacturers make provisions to collect and share data in order to lay the groundwork for improving reliability into the future. Reliability analysis helps guide reliability improvements in hardware and software technology including condition monitoring and prognostics and health management.

  4. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Reliability of electronic systems

    International Nuclear Information System (INIS)

    Roca, Jose L.

    2001-01-01

    Reliability techniques have been developed subsequently as a need of the diverse engineering disciplines, nevertheless they are not few those that think they have been work a lot on reliability before the same word was used in the current context. Military, space and nuclear industries were the first ones that have been involved in this topic, however not only in these environments it is that it has been carried out this small great revolution in benefit of the increase of the reliability figures of the products of those industries, but rather it has extended to the whole industry. The fact of the massive production, characteristic of the current industries, drove four decades ago, to the fall of the reliability of its products, on one hand, because the massively itself and, for other, to the recently discovered and even not stabilized industrial techniques. Industry should be changed according to those two new requirements, creating products of medium complexity and assuring an enough reliability appropriated to production costs and controls. Reliability began to be integral part of the manufactured product. Facing this philosophy, the book describes reliability techniques applied to electronics systems and provides a coherent and rigorous framework for these diverse activities providing a unifying scientific basis for the entire subject. It consists of eight chapters plus a lot of statistical tables and an extensive annotated bibliography. Chapters embrace the following topics: 1- Introduction to Reliability; 2- Basic Mathematical Concepts; 3- Catastrophic Failure Models; 4-Parametric Failure Models; 5- Systems Reliability; 6- Reliability in Design and Project; 7- Reliability Tests; 8- Software Reliability. This book is in Spanish language and has a potentially diverse audience as a text book from academic to industrial courses. (author)

  6. Electronics reliability calculation and design

    CERN Document Server

    Dummer, Geoffrey W A; Hiller, N

    1966-01-01

    Electronics Reliability-Calculation and Design provides an introduction to the fundamental concepts of reliability. The increasing complexity of electronic equipment has made problems in designing and manufacturing a reliable product more and more difficult. Specific techniques have been developed that enable designers to integrate reliability into their products, and reliability has become a science in its own right. The book begins with a discussion of basic mathematical and statistical concepts, including arithmetic mean, frequency distribution, median and mode, scatter or dispersion of mea

  7. Field reliability of electronic systems

    International Nuclear Information System (INIS)

    Elm, T.

    1984-02-01

    This report investigates, through several examples from the field, the reliability of electronic units in a broader sense. That is, it treats not just random parts failure, but also inadequate reliability design and (externally and internally) induced failures. The report is not meant to be merely an indication of the state of the art for the reliability prediction methods we know, but also as a contribution to the investigation of man-machine interplay in the operation and repair of electronic equipment. The report firmly links electronics reliability to safety and risk analyses approaches with a broader, system oriented view of reliability prediction and with postfailure stress analysis. It is intended to reveal, in a qualitative manner, the existence of symptom and cause patterns. It provides a background for further investigations to identify the detailed mechanisms of the faults and the remedical actions and precautions for achieving cost effective reliability. (author)

  8. Design for Reliability of Power Electronic Systems

    DEFF Research Database (Denmark)

    Yang, Yongheng; Wang, Huai; Sangwongwanich, Ariya

    2018-01-01

    Power density, efficiency, cost, and reliability are the major challenges when designing a power electronic system. Latest advancements in power semiconductor devices (e.g., silicon carbide devices) and topological innovations have vital contributions to power density and efficiency. Nevertheless......, dedicated heat sink systems for thermal management are required to dissipate the power losses in power electronic systems; otherwise, the power devices will be heated up and eventually fail to operate. In addition, in many mission critical applications (e.g., marine systems), the operating condition (i...

  9. Power Electronics Packaging Reliability | Transportation Research | NREL

    Science.gov (United States)

    Packaging Reliability Power Electronics Packaging Reliability A photo of a piece of power electronics laboratory equipment. NREL power electronics packaging reliability research investigates the electronics packaging around a semiconductor switching device determines the electrical, thermal, and

  10. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  11. Component reliability for electronic systems

    CERN Document Server

    Bajenescu, Titu-Marius I

    2010-01-01

    The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.

  12. Reliability of Power Electronic Converter Systems

    DEFF Research Database (Denmark)

    -link capacitance in power electronic converter systems; wind turbine systems; smart control strategies for improved reliability of power electronics system; lifetime modelling; power module lifetime test and state monitoring; tools for performance and reliability analysis of power electronics systems; fault...... for advancing the reliability, availability, system robustness, and maintainability of PECS at different levels of complexity. Drawing on the experience of an international team of experts, this book explores the reliability of PECS covering topics including an introduction to reliability engineering in power...... electronic converter systems; anomaly detection and remaining-life prediction for power electronics; reliability of DC-link capacitors in power electronic converters; reliability of power electronics packaging; modeling for life-time prediction of power semiconductor modules; minimization of DC...

  13. Microstructural and reliability in grinding of silicon nitride

    International Nuclear Information System (INIS)

    Liu, C.-C.

    2004-01-01

    A sintered Si 3 N 4 matrix has been characterized by TEM. The film thickness distribution of Si 3 N 4 was measured by high resolution transmission electron microscopy (HREM). Surface grinding is performed on two table speeds of 0.08 and 0.25 m s -1 with different depth of cut. The ground surfaces were observed with scanning electron microscopy (SEM). The surface texture was found to have greater dependence on depth of cut and table speed. The surface roughness is improved after smaller depth of cut. The flexural strength of ground specimens were measured by four-point flexure tests. The effect of depth of cut during grinding on the flexural strength and reliability of silicon nitride is investigated. The large depth of cut of 30 μm/pass resulted in a further decreased in strength of 540 MPa and a Weibull modulus of 7.5. When the depth of cut of 5 μm/pass were subjected to the ground specimens, the average strength was increased to 670 MPa and Weibull modulus to 9.1

  14. Test setup for long term reliability investigation of Silicon Carbide MOSFETs

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

    2013-01-01

    Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

  15. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar

    2017-03-30

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  16. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2017-01-01

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  17. Design for Reliability of Power Electronic Systems

    DEFF Research Database (Denmark)

    Wang, Huai; Ma, Ke; Blaabjerg, Frede

    2012-01-01

    Advances in power electronics enable efficient and flexible processing of electric power in the application of renewable energy sources, electric vehicles, adjustable-speed drives, etc. More and more efforts are devoted to better power electronic systems in terms of reliability to ensure high......). A collection of methodologies based on Physics-of-Failure (PoF) approach and mission profile analysis are presented in this paper to perform reliability-oriented design of power electronic systems. The corresponding design procedures and reliability prediction models are provided. Further on, a case study...... on a 2.3 MW wind power converter is discussed with emphasis on the reliability critical components IGBTs. Different aspects of improving the reliability of the power converter are mapped. Finally, the challenges and opportunities to achieve more reliable power electronic systems are addressed....

  18. Investigating reliability attributes of silicon photovoltaic cells - An overview

    Science.gov (United States)

    Royal, E. L.

    1982-01-01

    Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

  19. Reliability of power electronic converter systems

    CERN Document Server

    Chung, Henry Shu-hung; Blaabjerg, Frede; Pecht, Michael

    2016-01-01

    This book outlines current research into the scientific modeling, experimentation, and remedial measures for advancing the reliability, availability, system robustness, and maintainability of Power Electronic Converter Systems (PECS) at different levels of complexity.

  20. Secondary electron emission in nanostructured porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ruano, G D; Ferron, J; Koropecki, R R, E-mail: gdruano@ceride.gov.a [INTEC-UNL-CONICET, Gueemes 3450 - 3000 Santa Fe (Argentina)

    2009-05-01

    We studied the reversible reduction induced by ion bombardment of the secondary electron emission (SEE) yield. This effect has been modelled as due to changes in dynamically sustained dipoles related with ions and electrons penetration ranges. Such charge configuration precludes the escape of electrons from the nanoporous silicon, making the SEE dependent on the flux of impinging ions. Since this dipolar momentum depends on the electric conduction of the porous medium, by controlled oxidation of the nanoporous structure we change the conduction features of the sample, studying the impact on the SEE reduction effect. Li ion bombardment was also used with the intention of changing the parameters determining the effect. FT-IR and Auger electron spectroscopy were used to characterize the oxidation degree of the samples at different depth scales

  1. A physically transient form of silicon electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Tao, Hu; Kim, Dae-Hyeong; Cheng, Huanyu; Song, Jun-Kyul; Rill, Elliott; Brenckle, Mark A; Panilaitis, Bruce; Won, Sang Min; Kim, Yun-Soung; Song, Young Min; Yu, Ki Jun; Ameen, Abid; Li, Rui; Su, Yewang; Yang, Miaomiao; Kaplan, David L; Zakin, Mitchell R; Slepian, Marvin J; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A

    2012-09-28

    A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.

  2. Photonic integration and photonics-electronics convergence on silicon platform

    CERN Document Server

    Liu, Jifeng; Baba, Toshihiko; Vivien, Laurent; Xu, Dan-Xia

    2015-01-01

    Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference de...

  3. Body of Knowledge for Silicon Carbide Power Electronics

    Science.gov (United States)

    Boomer, Kristen; Lauenstein, Jean-Marie; Hammoud, Ahmad

    2016-01-01

    Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

  4. Design for low-power and reliable flexible electronics

    Science.gov (United States)

    Huang, Tsung-Ching (Jim)

    Flexible electronics are emerging as an alternative to conventional Si electronics for large-area low-cost applications such as e-paper, smart sensors, and disposable RFID tags. By utilizing inexpensive manufacturing methods such as ink-jet printing and roll-to-roll imprinting, flexible electronics can be made on low-cost plastics just like printing a newspaper. However, the key elements of exible electronics, thin-film transistors (TFTs), have slower operating speeds and less reliability than their Si electronics counterparts. Furthermore, depending on the material property, TFTs are usually mono-type -- either p- or n-type -- devices. Making air-stable complementary TFT circuits is very challenging and not applicable to most TFT technologies. Existing design methodologies for Si electronics, therefore, cannot be directly applied to exible electronics. Other inhibiting factors such as high supply voltage, large process variation, and lack of trustworthy device modeling also make designing larger-scale and robust TFT circuits a significant challenge. The major goal of this dissertation is to provide a viable solution for robust circuit design in exible electronics. I will first introduce a reliability simulation framework that can predict the degraded TFT circuits' performance under bias-stress. This framework has been validated using the amorphous-silicon (a-Si) TFT scan driver for TFT-LCD displays. To reuse the existing CMOS design ow for exible electronics, I propose a Pseudo-CMOS cell library that can make TFT circuits operable under low supply voltage and which has post-fabrication tunability for reliability and performance enhancement. This cell library has been validated using 2V self-assembly-monolayer (SAM) organic TFTs with a low-cost shadow-mask deposition process. I will also demonstrate a 3-bit 1.25KS/s Flash ADC in a-Si TFTs, which is based on the proposed Pseudo-CMOS cell library, and explore more possibilities in display, energy, and sensing

  5. Atomic and electronic structures of novel silicon surface structures

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.H. Jr.

    1997-03-01

    The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.

  6. Silicon radiation detector analysis using back electron beam induced current

    International Nuclear Information System (INIS)

    Guye, R.

    1987-01-01

    A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

  7. Silicon carbide devices: more reliability for transmission and distribution systems; Dispositivos de SiC: mais confiabilidade para sistemas de transmissao e distribuicao

    Energy Technology Data Exchange (ETDEWEB)

    Basset, Roger; Ballad, John [Areva T and D Tecnology Centre (United Kingdom)

    2006-05-15

    The silicon carbide power semiconductors will represent an essential role in relation to electrical nets in the future. Counting with higher voltage levels, more rapid commutations and allowing higher temperatures then the current silicon semiconductors, they will result in power electronic equipment with lower dissipation and smaller amount of components, becoming more compacts and reliable.

  8. Production of electronic grade lunar silicon by disproportionation of silicon difluoride

    Science.gov (United States)

    Agosto, William N.

    1993-01-01

    Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

  9. Basic opto-electronics on silicon for sensor applications

    NARCIS (Netherlands)

    Joppe, J.L.; Bekman, H.H.P.Th.; de Krijger, A.J.T.; Albers, H.; Chalmers, J.; Chalmers, J.D.; Holleman, J.; Ikkink, T.J.; Ikkink, T.; van Kranenburg, H.; Zhou, M.-J.; Zhou, Ming-Jiang; Lambeck, Paul

    1994-01-01

    A general platform for integrated opto-electronic sensor systems on silicon is proposed. The system is based on a hybridly integrated semiconductor laser, ZnO optical waveguides and monolithic photodiodes and electronic circuiry.

  10. Polycystalline silicon thin films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Jaeger, Christian Claus

    2012-01-15

    with an activation energy of E{sub A}{sup poly-Si}=1.1 eV. By long-lasting tempering or a short high-temperature step finally the stable layer configuration substrate/Al+Si islands(hillocks)/poly-Si can be reached (E{sub A}{sup hillocks}=2.4 eV). The further main topic of this thesis is the study of the applicability of the poly-silicon layers fabricated by means of the ALILE and R-ALILE process for electronic applications. First thin-film transistors were studied. Additionally thin-film solar cells with microcrystalline silicon as absorber material on polycrystalline R-ALILE seed layers were fabricated. Finally the suitedness of the fabricated poly-silicon layers for crytographic applications were studied.

  11. Compton recoil electron tracking with silicon strip detectors

    International Nuclear Information System (INIS)

    O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

    1992-01-01

    The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

  12. Electroluminescence from porous silicon due to electron injection from solution

    NARCIS (Netherlands)

    Kooij, Ernst S.; Despo, R.W.; Kelly, J.J.

    1995-01-01

    We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The

  13. Silicon-based metallic micro grid for electron field emission

    International Nuclear Information System (INIS)

    Kim, Jaehong; Jeon, Seok-Gy; Kim, Jung-Il; Kim, Geun-Ju; Heo, Duchang; Shin, Dong Hoon; Sun, Yuning; Lee, Cheol Jin

    2012-01-01

    A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 µm 2 and a thickness of 10 µm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700 °C are presented. (paper)

  14. Study of porous silicon morphologies for electron transport

    International Nuclear Information System (INIS)

    Pang, Y.; Demroff, H.P.; Elliott, T.S.; Lee, B.; Lu, J.; Madduri, V.B.; Mazumdar, T.K.; McIntyre, P.M.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Field emitter devices are being developed for the gigatron, a high-efficiency, high frequency and high power microwave source. One approach being investigated is porous silicon, where a dense matrix of nanoscopic pores are galvanically etched into a silicon surface. In the present paper pore morphologies were used to characterize these materials. Using of Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) images of both N-type and P-type porous layers, it is found that pores propagate along the crystallographic direction, perpendicular to the surface of (100) silicon. Distinct morphologies were observed systematically near the surface, in the main bulk and near the bottom of N-type (100) silicon lift-off samples. It is seen that the pores are not cylindrical but exhibit more or less approximately square cross sections. X-ray diffraction spectra and electron diffraction patterns verified that bulk porous silicon is still a single crystal. In addition, a Scanning Tunnelling Microscope (STM) and an Atomic Force Microscope (AFM) were successfully applied to image the 40 angstrom gold film structure which was coated upon a cooled porous silicon layer. By associating the morphology study with the measured emitting current density of the Oxidized Porous Silicon Field Emission Triode (OPSFET), techniques for the surface treatment of porous silicon will be optimized

  15. Electron microscopy studies of ion implanted silicon

    International Nuclear Information System (INIS)

    Seshan, K.

    1975-11-01

    The nature of defects resulting from the implantation of phosphorous ions into doped silicon and a model of how they form are reported. This involved an electron microscope study of the crystallographic defects (in the 300A size range in concentration of 10 15 /cm 3 ) that form upon annealing. Images formed by these crystallographic defects are complex and that nonconventional imaging techniques are required for their characterization. The images of these small defects (about 300A) are sensitive to various parameters, such as foil thickness, their position in the foil, and diffracting conditions. The defects were found to be mostly interstitial hexagonal Frank loops lying on the four [111] planes and a few perfect interstitial loops; these loops occurred in concentrations of about 10 16 /cm 3 . In addition, ''rod like'' linear defects that are shown to be interstitial are also found in concentrations of 10 13 /cm 3 . It was found that the linear defects require boron for their formation. A model is proposed to account for the interstitial defects. The number of point defects that make up the defects is of the same order as the number of implanted ions. The model predicts that only interstitial loops ought to be observed in agreement with several recent investigations. Dislocation models of the loops are examined and it is shown that phosphorous ions could segregate to the Frank loops, changing their displacement vectors to a/x[111]. (x greater than 3) thus explaining the contrast effects observed. It would also explain the relative electrical inactivity of P + ion implants

  16. Life prediction and mechanical reliability of NT551 silicon nitride

    Science.gov (United States)

    Andrews, Mark Jay

    The inert strength and fatigue performance of a diesel engine exhaust valve made from silicon nitride (Si3N4) ceramic were assessed. The Si3N4 characterized in this study was manufactured by Saint Gobain/Norton Industrial Ceramics and was designated as NT551. The evaluation was made utilizing a probabilistic life prediction algorithm that combined censored test specimen strength data with a Weibull distribution function and the stress field of the ceramic valve obtained from finite element analysis. The major assumptions of the life prediction algorithm are that the bulk ceramic material is isotropic and homogeneous and that the strength-limiting flaws are uniformly distributed. The results from mechanical testing indicated that NT551 was not a homogeneous ceramic and that its strength were functions of temperature, loading rate, and machining orientation. Fractographic analysis identified four different failure modes; 2 were identified as inhomogeneities that were located throughout the bulk of NT551 and were due to processing operations. The fractographic analysis concluded that the strength degradation of NT551 observed from the temperature and loading rate test parameters was due to a change of state that occurred in its secondary phase. Pristine and engine-tested valves made from NT551 were loaded to failure and the inert strengths were obtained. Fractographic analysis of the valves identified the same four failure mechanisms as found with the test specimens. The fatigue performance and the inert strength of the Si3N 4 valves were assessed from censored and uncensored test specimen strength data, respectively. The inert strength failure probability predictions were compared to the inert strength of the Si3N4 valves. The inert strength failure probability predictions were more conservative than the strength of the valves. The lack of correlation between predicted and actual valve strength was due to the nonuniform distribution of inhomogeneities present in NT

  17. Reliable design of electronic equipment an engineering guide

    CERN Document Server

    Natarajan, Dhanasekharan

    2014-01-01

    This book explains reliability techniques with examples from electronics design for the benefit of engineers. It presents the application of de-rating, FMEA, overstress analyses and reliability improvement tests for designing reliable electronic equipment. Adequate information is provided for designing computerized reliability database system to support the application of the techniques by designers. Pedantic terms and the associated mathematics of reliability engineering discipline are excluded for the benefit of comprehensiveness and practical applications. This book offers excellent support

  18. Optimization of deformations and hoop stresses in TSV liners to boost interconnect reliability in electronic appliances

    Science.gov (United States)

    Juma, Mary Atieno; Zhang, Xuliang; He, Song Bai; Abusabah, Ahmed I. A.

    2015-12-01

    Recently, there has been a lot of research with electronic products because more and different functions are integrated into devices and the final product sizes have to be small to meet the market demand. A lot of research has been done on the (TSVs) Through Silicon Vias. In this paper, through silicon via liners are investigated. The liners: silicon dioxide, polystyrene and polypropylene carbonate are exposed to pressure on their inner surfaces and this yielded hoop stresses within their thickness. Deflections too occurred and this is a proof that deformation really took place. In one of our papers, hoop stresses for the same materials were investigated. The values were a little higher but different for each material used. In this paper, we use global cylindrical, partial cylinder model with different theta in Analysis system 14 to model the through silicon via liners. The values are lower meaning the reliability of the liners have been optimized and boosted. However, silicon dioxide liner had the lowest hoop stress around its circumference and lowest deflection value meaning that it's still one of the most reliable materials in the manufacture of through silicon via liners in the industry; but overdependence can be avoided if the other liners are used too.

  19. Novel technique for reliability testing of silicon integrated circuits

    NARCIS (Netherlands)

    Le Minh, P.; Wallinga, Hans; Woerlee, P.H.; van den Berg, Albert; Holleman, J.

    2001-01-01

    We propose a simple, inexpensive technique with high resolution to identify the weak spots in integrated circuits by means of a non-destructive photochemical process in which photoresist is used as the photon detection tool. The experiment was done to localize the breakdown link of thin silicon

  20. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  1. Silicon nanocrystal films for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Lechner, Robert W.

    2009-02-06

    Whether nanoparticles of silicon are really suited for such applications, whether layers fabricated from this exhibit semiconducting properties, whether they can be doped, and whether for instance via the doping the conductivity can be tuned, was studied in the present thesis. Starting material for this were on the one hand spherical silicon nanocrystals with a sharp size distribution and mean diameters in the range from 4-50 nm. Furthermore silicon particle were available, which are with 50-500 nm distinctly larger and exhibit a broad distribution of the mean size and a polycrystalline fine structure with strongly bifurcated external morphology. The small conductivities and tje low mobility values of the charge carriers in the layers of silicon nanocrystals suggest to apply suited thermal after-treatment procedures. So was found that the aluminium-induced layer exchange (ALILE) also can be transferred to the porous layers of nanocrystals. With the deuteron passivation a method was available to change the charge-carrier concentration in the polycrystalline layers. Additionally to ALILE laser crystallization as alternative after-treatment procedure of the nanocrystal layers was studied.

  2. A Reliability-Oriented Design Method for Power Electronic Converters

    DEFF Research Database (Denmark)

    Wang, Huai; Zhou, Dao; Blaabjerg, Frede

    2013-01-01

    Reliability is a crucial performance indicator of power electronic systems in terms of availability, mission accomplishment and life cycle cost. A paradigm shift in the research on reliability of power electronics is going on from simple handbook based calculations (e.g. models in MIL-HDBK-217F h...... and reliability prediction models are provided. A case study on a 2.3 MW wind power converter is discussed with emphasis on the reliability critical component IGBT modules....

  3. Active silicon x-ray for measuring electron temperature

    International Nuclear Information System (INIS)

    Snider, R.T.

    1994-07-01

    Silicon diodes are commonly used for x-ray measurements in the soft x-ray region between a few hundred ev and 20 keV. Recent work by Cho has shown that the charge collecting region in an underbiased silicon detector is the depletion depth plus some contribution from a region near the depleted region due to charge-diffusion. The depletion depth can be fully characterized as a function of the applied bias voltage and is roughly proportional to the squart root of the bias voltage. We propose a technique to exploit this effect to use the silicon within the detector as an actively controlled x-ray filter. With reasonable silicon manufacturing methods, a silicon diode detector can be constructed in which the sensitivity of the collected charge to the impinging photon energy spectrum can be changed dynamically in the visible to above the 20 keV range. This type of detector could be used to measure the electron temperature in, for example, a tokamak plasma by sweeping the applied bias voltage during a plasma discharge. The detector samples different parts of the energy spectrum during the bias sweep, and the data collected contains enough information to determine the electron temperature. Benefits and limitations of this technique will be discussed along with comparisons to similar methods for measuring electron temperature and other applications of an active silicon x-ray filter

  4. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  5. Silicon analog components device design, process integration, characterization, and reliability

    CERN Document Server

    El-Kareh, Badih

    2015-01-01

    This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.

  6. A strained silicon cold electron bolometer using Schottky contacts

    Energy Technology Data Exchange (ETDEWEB)

    Brien, T. L. R., E-mail: tom.brien@astro.cf.ac.uk; Ade, P. A. R.; Barry, P. S.; Dunscombe, C.; Morozov, D. V.; Sudiwala, R. V. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Leadley, D. R.; Myronov, M.; Parker, E. H. C.; Prest, M. J.; Whall, T. E. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Prunnila, M. [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT Espoo (Finland); Mauskopf, P. D. [School of Physics and Astronomy, Cardiff University, Queen' s Buildings, The Parade, Cardiff CF24 3AA (United Kingdom); Department of Physics and School of Earth and Space Exploration, Arizona State University, 650 E. Tyler Mall, Tempe, Arizona 85287 (United States)

    2014-07-28

    We describe optical characterisation of a strained silicon cold electron bolometer (CEB), operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The silicon cold electron bolometer utilises Schottky contacts between a superconductor and an n{sup ++} doped silicon island to detect changes in the temperature of the charge carriers in the silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we decrease the electron-phonon coupling in the device and increase the responsivity to incoming power. The strained silicon absorber is coupled to a planar aluminium twin-slot antenna designed to couple to 160 GHz and that serves as the superconducting contacts. From the measured optical responsivity and spectral response, we calculate a maximum optical efficiency of 50% for radiation coupled into the device by the planar antenna and an overall noise equivalent power, referred to absorbed optical power, of 1.1×10{sup −16} W Hz{sup −1/2} when the detector is observing a 300 K source through a 4 K throughput limiting aperture. Even though this optical system is not optimized, we measure a system noise equivalent temperature difference of 6 mK Hz{sup −1/2}. We measure the noise of the device using a cross-correlation of time stream data, measured simultaneously with two junction field-effect transistor amplifiers, with a base correlated noise level of 300 pV Hz{sup −1/2} and find that the total noise is consistent with a combination of photon noise, current shot noise, and electron-phonon thermal noise.

  7. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 38; Issue 5. Evaluation on ... This research deals with the study of electron beam melting (EBM) methodology utilized in melting silicon material and subsequently discusses on the effect of oxygen level on electrical resistivity change after EBM process. The oxygen ...

  8. Development of electron temperature measuring system by silicon drift detector

    International Nuclear Information System (INIS)

    Song Xianying; Yang Jinwei; Liao Min

    2007-12-01

    Soft X-ray spectroscopy with two channels Silicon Drift Detector (SDD) are adopted for electron temperature measuring on HL-2A tokamak in 2005. The working principle, design and first operation of the SDD soft X-ray spectroscopy are introduced. The measuring results of electron temperature are also presented. The results show that the SDD is very good detector for electron temperature measuring on HL-2A tokamak. These will become a solid basic work to establish SDD array for electron temperature profiling. (authors)

  9. X-ray and scanning electron microscopic investigation of porous silicon and silicon epitaxial layers grown on porous silicon

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Pawlowska, M.; Nossarzewska-Orlowska, E.; Brzozowski, A.; Wieteska, K.; Graeff, W.

    1998-01-01

    The 1 to 5 μm thick layers of porous silicon and epitaxial layers grown on porous silicon were studied by means of X-ray diffraction methods, realised with a wide use of synchrotron source and scanning microscopy. The results of x-ray investigation pointed the difference of lateral periodicity between the porous layer and the substrate. It was also found that the deposition of epitaxial layer considerably reduced the coherence of porous fragments. A number of interface phenomena was also observed in section and plane wave topographs. The scanning electron microscopic investigation of cleavage faces enabled direct evaluation of porous layer thickness and revealed some details of their morphology. The scanning observation of etched surfaces of epitaxial layers deposited on porous silicon revealed dislocations and other defects not reasonable in the X-ray topographs. (author)

  10. Influence of external effects on the electron silicon properties

    International Nuclear Information System (INIS)

    Orazgulyev, B.; Bigozha, O.D.

    2005-01-01

    It is noted, that study of angular dependence of longitudinal piezo-resistance of n-type silicon presents the both scientific and practical interest because the obtained data could serve the ground for creating a high-sensitive piezo-sensors. Measurement of angular dependence allows objectively estimate the errors of anisotropy parameter determination, constant of deformation potential caused of mistakes in maintenance of crystallographic directions during the samples production process. In the case of X||J||[111] at one-axis deformation a new kind of piezo-effect in electron silicon is revealed. It is explained by transformation of iso-energy rotation ellipsoid into three-axis ellipsoid at presence of shear silicon crystal deformation

  11. Galvanic corrosion of structural non-stoichiometric silicon nitride thin films and its implications on reliability of microelectromechanical devices

    Energy Technology Data Exchange (ETDEWEB)

    Broas, M., E-mail: mikael.broas@aalto.fi; Mattila, T. T.; Paulasto-Kröckel, M. [Department of Electrical Engineering and Automation, Aalto University, Espoo, P.O. Box 13500, FIN-00076 Aalto (Finland); Liu, X.; Ge, Y. [Department of Materials Science and Engineering, Aalto University, Espoo, P.O. Box 16200, FIN-00076 Aalto (Finland)

    2015-06-28

    This paper describes a reliability assessment and failure analysis of a poly-Si/non-stoichiometric silicon nitride thin film composite structure. A set of poly-Si/SiN{sub x} thin film structures were exposed to a mixed flowing gas (MFG) environment, which simulates outdoor environments, for 90 days, and an elevated temperature and humidity (85 °C/95% R.H.) test for 140 days. The mechanical integrity of the thin films was observed to degrade during exposure to the chemically reactive atmospheres. The degree of degradation was analyzed with nanoindentation tests. Statistical analysis of the forces required to initiate a fracture in the thin films indicated degradation due to the exposure to the MFG environment in the SiN{sub x} part of the films. Scanning electron microscopy revealed a porous-like reaction layer on top of SiN{sub x}. The morphology of the reaction layer resembled that of galvanically corroded poly-Si. Transmission electron microscopy further clarified the microstructure of the reaction layer which had a complex multi-phase structure extending to depths of ∼100 nm. Furthermore, the layer was oxidized two times deeper in a 90 days MFG-tested sample compared to an untested reference. The formation of the layer is proposed to be caused by galvanic corrosion of elemental silicon in non-stoichiometric silicon nitride during hydrofluoric acid etching. The degradation is proposed to be due uncontrolled oxidation of the films during the stress tests.

  12. High Performance Electronics on Flexible Silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  13. Electronic structure of deep impurity centers in silicon

    International Nuclear Information System (INIS)

    Oosten, A.B. van.

    1989-01-01

    This thesis reports an experimental study of deep level impurity centers in silicon, with much attention for theoretical interpretation of the data. A detailed picture of the electronic structure of several centers was obtained by magnetic resonance techniques, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR) and field scanned ENDOR (FSE). The thesis consists of two parts. The first part deals with chalcogen (sulfur, selenium and tellurium) related impurities, which are mostly double donors. The second part is about late transition metal (nickel, palladium and platinum) impurities, which are single (Pd,Pt) or double (Ni) acceptor centers. (author). 155 refs.; 51 figs.; 23 tabs

  14. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    CERN Document Server

    Pearton, Stephen

    2013-01-01

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and ...

  15. Power Electronic Packaging Design, Assembly Process, Reliability and Modeling

    CERN Document Server

    Liu, Yong

    2012-01-01

    Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can d...

  16. The CMS silicon strip tracker and its electronic readout

    International Nuclear Information System (INIS)

    Friedl, M.

    2001-05-01

    The Large Hadron Collider (LHC) at CERN (Geneva, CH) will be the world's biggest accelerator machine when operation starts in 2006. One of its four detector experiments is the Compact Muon Solenoid (CMS), consisting of a large-scale silicon tracker and electromagnetic and hadron calorimeters, all embedded in a solenoidal magnetic field of 4 T, and a muon system surrounding the magnet coil. The Silicon Strip Tracker has a sensitive area of 206m 2 with 10 million analog channels which are read out at the collider frequency of 40 MHz. The building blocks of the CMS Tracker are the silicon sensors, APV amplifier ASICs, supporting front-end ASICs, analog and digital optical links as well as data processors and control units in the back-end. Radiation tolerance, readout speed and the huge data volume are challenging requirements. The charge collection in silicon detectors was modeled, which is discussed as well as the concepts of readout amplifiers with respect to the LHC requirements, including the deconvolution method of fast pulse shaping, electronic noise constraints and radiation effects. Moreover, extensive measurements on prototype components of the CMS Tracker and different versions of the APV chip in particular were performed. There was a significant contribution to the construction of several detector modules, characterized them in particle beam tests and quantified radiation induced effects on the APV chip and on silicon detectors. In addition, a prototype of the analog optical link and the analog performance of the back-end digitization unit were evaluated. The results are very encouraging, demonstrating the feasibility of the CMS Silicon Strip Tracker system and motivating progress towards the construction phase. (author)

  17. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.

    2017-01-01

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21

  18. Structural defects in laser- and electron-beam annealed silicon

    International Nuclear Information System (INIS)

    Narayan, J.

    1979-01-01

    Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

  19. Orientation acoustic radiation of electrons in silicon thick crystal

    International Nuclear Information System (INIS)

    Alejnik, A.N.; Afanas'ev, S.G.; Vorob'ev, S.A.; Zabaev, V.N.; Il'in, S.I.; Kalinin, B.N.; Potylitsyn, A.P.

    1989-01-01

    Results of measuring orientation acoustic radiation of 900 and 500 MeV electrons during their movement along crystallographic axis in thick silicon crystal (h=20 mm thickness) are presented for the first time. Analysis of obtained results shows that dynamic mechanism describes rather completely the main regularities of orientation dependence of the amplitude of acoustic signal occuring under electron motion near crystallographic axis of the crystal. Phenomena of orientation acoustic radiation can be also used for investigation of solid bodies. Orientation both of thin and rather thick monocrystals can be conducted on the basis of dynamic mechanism of elastic wave excitation in crystals

  20. Design for Reliability of Power Electronics in Renewable Energy Systems

    DEFF Research Database (Denmark)

    Ma, Ke; Yang, Yongheng; Wang, Huai

    2014-01-01

    Power electronics is the enabling technology for maximizing the power captured from renewable electrical generation, e.g., the wind and solar technology, and also for an efficient integration into the grid. Therefore, it is important that the power electronics are reliable and do not have too many...... failures during operation which otherwise will increase cost for operation, maintenance and reputation. Typically, power electronics in renewable electrical generation has to be designed for 20–30 years of operation, and in order to do that, it is crucial to know about the mission profile of the power...... electronics technology as well as to know how the power electronics technology is loaded in terms of temperature and other stressors relevant, to reliability. Hence, this chapter will show the basics of power electronics technology for renewable energy systems, describe the mission profile of the technology...

  1. Power Electronics and Reliability in Renewable Energy Systems

    DEFF Research Database (Denmark)

    Blaabjerg, Frede; Ma, Ke; Zhou, Dao

    2012-01-01

    Power Electronics are needed in almost all kind of renewable energy systems. It is used both for controlling the renewable source and also for interfacing to the load, which can be grid-connected or working in stand-alone mode. More and more efforts are put into making renewable energy systems...... better in terms of reliability in order to ensure a high availability of the power sources, in this case the knowledge of mission profile of a certain application is crucial for the reliability evaluation/design of power electronics. In this paper an overview on the power electronic circuits behind...... the most common converter configurations for wind turbine and photovoltaic is done. Next different aspects of improving the system reliability are mapped. Further on examples of how to control the chip temperature in different power electronic configurations as well as operation modes for wind power...

  2. Burst annealing of electron damage in silicon solar cells

    International Nuclear Information System (INIS)

    Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

    1985-01-01

    A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

  3. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  4. Reliability Issues and Solutions in Flexible Electronics Under Mechanical Fatigue

    Science.gov (United States)

    Yi, Seol-Min; Choi, In-Suk; Kim, Byoung-Joon; Joo, Young-Chang

    2018-03-01

    Flexible devices are of significant interest due to their potential expansion of the application of smart devices into various fields, such as energy harvesting, biological applications and consumer electronics. Due to the mechanically dynamic operations of flexible electronics, their mechanical reliability must be thoroughly investigated to understand their failure mechanisms and lifetimes. Reliability issue caused by bending fatigue, one of the typical operational limitations of flexible electronics, has been studied using various test methodologies; however, electromechanical evaluations which are essential to assess the reliability of electronic devices for flexible applications had not been investigated because the testing method was not established. By employing the in situ bending fatigue test, we has studied the failure mechanism for various conditions and parameters, such as bending strain, fatigue area, film thickness, and lateral dimensions. Moreover, various methods for improving the bending reliability have been developed based on the failure mechanism. Nanostructures such as holes, pores, wires and composites of nanoparticles and nanotubes have been suggested for better reliability. Flexible devices were also investigated to find the potential failures initiated by complex structures under bending fatigue strain. In this review, the recent advances in test methodology, mechanism studies, and practical applications are introduced. Additionally, perspectives including the future advance to stretchable electronics are discussed based on the current achievements in research.

  5. The atomic and electronic structure of amorphous silicon nitride

    International Nuclear Information System (INIS)

    Alvarez, F.; Valladares, A.A.

    2002-01-01

    Using a novel approach to the ab initio generation of random networks we constructed two nearly stoichiometric samples of amorphous silicon nitride with the same content x= 1.29. The two 64-atom periodically-continued cubic diamond-like cells contain 28 silicons and 36 nitrogens randomly substituted, and were amorphized with a 6 f s time step by heating them to just below their melting temperature with a Harris-functional based, molecular dynamics code in the LDA approximation. The averaged total radial distribution function (RDF) obtained is compared with some existing Tersoff-like potential simulations and with experiment; ours agree with experiment. All the partial radial features are calculated and the composition of the second peak also agrees with experiment. The electronic structure is calculated and the optical gaps obtained using both a HOMO-LUMO approach and the Tauc-like procedure developed recently that gives reasonable gaps. (Author)

  6. Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

    International Nuclear Information System (INIS)

    Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

    1985-01-01

    Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

  7. Quantitative analysis of complexes in electron irradiated CZ silicon

    International Nuclear Information System (INIS)

    Inoue, N.; Ohyama, H.; Goto, Y.; Sugiyama, T.

    2007-01-01

    Complexes in helium or electron irradiated silicon are quantitatively analyzed by highly sensitive and accurate infrared (IR) absorption spectroscopy. Carbon concentration (1x10 15 -1x10 17 cm -3 ) and helium dose (5x10 12 -5x10 13 cm -2 ) or electron dose (1x10 15 -1x10 17 cm -2 ) are changed by two orders of magnitude in relatively low regime compared to the previous works. It is demonstrated that the carbon-related complex in low carbon concentration silicon of commercial grade with low electron dose can be detected clearly. Concentration of these complexes is estimated. It is clarified that the complex configuration and thermal behavior in low carbon and low dose samples is simple and almost confined within the individual complex family compared to those in high concentration and high dose samples. Well-established complex behavior in electron-irradiated sample is compared to that in He-irradiated samples, obtained by deep level transient spectroscopy (DLTS) or cathodoluminescence (CL), which had close relation to the Si power device performance

  8. Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites.

    Science.gov (United States)

    Basu, Tanmoy; Kumar, Mohit; Saini, Mahesh; Ghatak, Jay; Satpati, Biswarup; Som, Tapobrata

    2017-11-08

    Point sources exhibit low threshold electron emission due to local field enhancement at the tip. In the case of silicon, however, the realization of tip emitters has been hampered by unwanted oxidation, limiting the number of emission sites and the overall current. In contrast to this, here, we report the fascinating low threshold (∼0.67 V μm -1 ) cold cathode electron emission from silicon nanofacets (Si-NFs). The ensembles of nanofacets fabricated at different time scales, under low energy ion impacts, yield tunable field emission with a Fowler-Nordheim tunneling field in the range of 0.67-4.75 V μm -1 . The local probe surface microscopy-based tunneling current mapping in conjunction with Kelvin probe force microscopy measurements revealed that the valleys and a part of the sidewalls of the nanofacets contribute more to the field emission process. The observed lowest turn-on field is attributed to the absence of native oxide on the sidewalls of the smallest facets as well as their lowest work function. In addition, first-principle density functional theory-based simulation revealed a crystal orientation-dependent work function of Si, which corroborates well with our experimental observations. The present study demonstrates a novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature. In principle, the present methodology can be extended to probe the cold cathode electron emission sites from any nanostructured material.

  9. Techniques for increasing the reliability of accelerator control system electronics

    International Nuclear Information System (INIS)

    Utterback, J.

    1993-09-01

    As the physical size of modern accelerators becomes larger and larger, the number of required control system circuit boards increases, and the probability of one of those circuit boards failing while in service also increases. In order to do physics, the experimenters need the accelerator to provide beam reliably with as little down time as possible. With the advent of colliding beams physics, reliability becomes even more important due to the fact that a control system failure can cause the loss of painstakingly produced antiprotons. These facts prove the importance of keeping reliability in mind when designing and maintaining accelerator control system electronics

  10. Knock-on electrons in WA98 silicon drift detector

    International Nuclear Information System (INIS)

    Eliseev, S.

    1997-01-01

    Silicon Drift Detector is used to estimate production of knock-on electrons created by passage of 158 GeV /u fully stripped Pb ion through thick lead target. Analysed data were collected in 1995 during Pb+Pb run in WA98 heavy ion experiment at CERN SPS. Information from WA98 Cherenkov beam counter makes it possible to classify events according to number of additional Pb ions which have during detector's read-out time passed through the target without nuclear interaction. Events with one and none pile-up ion are used for statistical separation of knock-on electrons from all detected charged particles. Resulting inclusive spectra of knock-on electrons are compared with GRANT simulations and good agreement is found. (author)

  11. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2014-06-01

    Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

  12. Readout electronics development for the ATLAS silicon tracker

    International Nuclear Information System (INIS)

    Borer, K.; Beringer, J.; Anghinolfi, F.; Aspell, P.; Chilingarov, A.; Jarron, P.; Heijne, E.H.M.; Santiard, J.C.; Verweij, H.; Goessling, C.; Lisowski, B.; Reichold, A.; Bonino, R.; Clark, A.G.; Kambara, H.; La Marra, D.; Leger, A.; Wu, X.; Richeux, J.P.; Taylor, G.N.; Fedotov, M.; Kuper, E.; Velikzhanin, Yu.; Campbell, D.; Murray, P.; Seller, P.

    1995-01-01

    We present the status of the development of the readout electronics for the large area silicon tracker of the ATLAS experiment at the LHC, carried out by the CERN RD2 project. Our basic readout concept is to integrate a fast amplifier, analog memory, sparse data scan circuit and analog-to-digital convertor (ADC) on a single VLSI chip. This architecture will provide full analog information of charged particle hits associated unambiguously to one LHC beam crossing, which is expected to be at a frequency of 40 MHz. The expected low occupancy of the ATLAS inner silicon detectors allows us to use a low speed (5 MHz) on-chip ADC with a multiplexing scheme. The functionality of the fast amplifier and analog memory have been demonstrated with various prototype chips. Most recently we have successfully tested improved versions of the amplifier and the analog memory. A piecewise linear ADC has been fabricated and performed satisfactorily up to 5 MHz. A new chip including amplifier, analog memory, memory controller, ADC, and data buffer has been designed and submitted for fabrication and will be tested on a prototype of the ATLAS silicon tracker module with realistic electrical and mechanical constraints. (orig.)

  13. Feasibility studies of microelectrode silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

    2002-01-01

    We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

  14. X-ray electron charge density distribution in silicon

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    During the last two years new highly accurate X-ray structure amplitudes for silicon have been published. Also the scattering phases of some 'forbidden' reflections have been determined using the X-ray three-beam case. This allows the construction of most precise valence and difference electron density plots and the comparison with those calculated on the basis of the Aldret-Hart X-ray pendelloesung data or theoretically. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference density are studied. (author)

  15. Electron transport in silicon nanowires having different cross-sections

    Directory of Open Access Journals (Sweden)

    Muscato Orazio

    2016-06-01

    Full Text Available Transport phenomena in silicon nanowires with different cross-section are investigated using an Extended Hydrodynamic model, coupled to the Schrödinger-Poisson system. The model has been formulated by closing the moment system derived from the Boltzmann equation on the basis of the maximum entropy principle of Extended Thermodynamics, obtaining explicit closure relations for the high-order fluxes and the production terms. Scattering of electrons with acoustic and non polar optical phonons have been taken into account. The bulk mobility is evaluated for square and equilateral triangle cross-sections of the wire.

  16. Reliability analysis of grid connected small wind turbine power electronics

    International Nuclear Information System (INIS)

    Arifujjaman, Md.; Iqbal, M.T.; Quaicoe, J.E.

    2009-01-01

    Grid connection of small permanent magnet generator (PMG) based wind turbines requires a power conditioning system comprising a bridge rectifier, a dc-dc converter and a grid-tie inverter. This work presents a reliability analysis and an identification of the least reliable component of the power conditioning system of such grid connection arrangements. Reliability of the configuration is analyzed for the worst case scenario of maximum conversion losses at a particular wind speed. The analysis reveals that the reliability of the power conditioning system of such PMG based wind turbines is fairly low and it reduces to 84% of initial value within one year. The investigation is further enhanced by identifying the least reliable component within the power conditioning system and found that the inverter has the dominant effect on the system reliability, while the dc-dc converter has the least significant effect. The reliability analysis demonstrates that a permanent magnet generator based wind energy conversion system is not the best option from the point of view of power conditioning system reliability. The analysis also reveals that new research is required to determine a robust power electronics configuration for small wind turbine conversion systems.

  17. A Study on the Thermomechanical Reliability Risks of Through-Silicon-Vias in Sensor Applications

    Directory of Open Access Journals (Sweden)

    Shuai Shao

    2017-02-01

    Full Text Available Reliability risks for two different types of through-silicon-vias (TSVs are discussed in this paper. The first is a partially-filled copper TSV, if which the copper layer covers the side walls and bottom. A polymer is used to fill the rest of the cavity. Stresses in risk sites are studied and ranked for this TSV structure by FEA modeling. Parametric studies for material properties (modulus and thermal expansion of TSV polymer are performed. The second type is a high aspect ratio TSV filled by polycrystalline silicon (poly Si. Potential risks of the voids in the poly Si due to filling defects are studied. Fracture mechanics methods are utilized to evaluate the risk for two different assembly conditions: package assembled to printed circuit board (PCB and package assembled to flexible substrate. The effect of board/substrate/die thickness and the size and location of the void are discussed.

  18. Modeling of humidity-related reliability in enclosures with electronics

    DEFF Research Database (Denmark)

    Hygum, Morten Arnfeldt; Popok, Vladimir

    2015-01-01

    Reliability of electronics that operate outdoor is strongly affected by environmental factors such as temperature and humidity. Fluctuations of these parameters can lead to water condensation inside enclosures. Therefore, modelling of humidity distribution in a container with air and freely exposed...

  19. Reliability & availability of wind turbine electrical & electronic components

    NARCIS (Netherlands)

    Tavner, P.; Faulstich, S.; Hahn, B.; Bussel, van G.J.W.

    2010-01-01

    Recent analysis of European onshore wind turbine reliability data has shown that whilst wind turbine mechanical subassemblies tend to have relatively low failure rates but long downtimes, electrical and electronic subassemblies have relatively high failure rates and short downtimes. For onshore wind

  20. Quality assurance and reliability in the Japanese electronics industry

    Science.gov (United States)

    Pecht, Michael; Boulton, William R.

    1995-02-01

    Quality and reliability are two attributes required for all Japanese products, although the JTEC panel found these attributes to be secondary to customer cost requirements. While our Japanese hosts gave presentations on the challenges of technology, cost, and miniaturization, quality and reliability were infrequently the focus of our discussions. Quality and reliability were assumed to be sufficient to meet customer needs. Fujitsu's slogan, 'quality built-in, with cost and performance as prime consideration,' illustrates this point. Sony's definition of a next-generation product is 'one that is going to be half the size and half the price at the same performance of the existing one'. Quality and reliability are so integral to Japan's electronics industry that they need no new emphasis.

  1. Adhesives technology for electronic applications materials, processing, reliability

    CERN Document Server

    Licari, James J

    2011-01-01

    Adhesives are widely used in the manufacture and assembly of electronic circuits and products. Generally, electronics design engineers and manufacturing engineers are not well versed in adhesives, while adhesion chemists have a limited knowledge of electronics. This book bridges these knowledge gaps and is useful to both groups. The book includes chapters covering types of adhesive, the chemistry on which they are based, and their properties, applications, processes, specifications, and reliability. Coverage of toxicity, environmental impacts and the regulatory framework make this book par

  2. Silicon nanowire based high brightness, pulsed relativistic electron source

    Directory of Open Access Journals (Sweden)

    Deep Sarkar

    2017-06-01

    Full Text Available We demonstrate that silicon nanowire arrays efficiently emit relativistic electron pulses under irradiation by a high-intensity, femtosecond, and near-infrared laser (∼1018 W/cm2, 25 fs, 800 nm. The nanowire array yields fluxes and charge per bunch that are 40 times higher than those emitted by an optically flat surface, in the energy range of 0.2–0.5 MeV. The flux and charge yields for the nanowires are observed to be directional in nature unlike that for planar silicon. Particle-in-cell simulations establish that such large emission is caused by the enhancement of the local electric fields around a nanowire, which consequently leads to an enhanced absorption of laser energy. We show that the high-intensity contrast (ratio of picosecond pedestal to femtosecond peak of the laser pulse (10−9 is crucial to this large yield. We extend the notion of surface local-field enhancement, normally invoked in low-order nonlinear optical processes like second harmonic generation, optical limiting, etc., to ultrahigh laser intensities. These electron pulses, expectedly femtosecond in duration, have potential application in imaging, material modification, ultrafast dynamics, terahertz generation, and fast ion sources.

  3. Solid-state Memory on Flexible Silicon for Future Electronic Applications

    KAUST Repository

    Ghoneim, Mohamed

    2016-11-01

    Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion

  4. A review of manufacturing metrology for improved reliability of silicon photovoltaic modules

    Science.gov (United States)

    Davis, Kristopher O.; Walters, Joseph; Schneller, Eric; Seigneur, Hubert; Brooker, R. Paul; Scardera, Giuseppe; Rodgers, Marianne P.; Mohajeri, Nahid; Shiradkar, Narendra; Dhere, Neelkanth G.; Wohlgemuth, John; Rudack, Andrew C.; Schoenfeld, Winston V.

    2014-10-01

    In this work, the use of manufacturing metrology across the supply chain to improve crystalline silicon (c-Si) photovoltaic (PV) module reliability and durability is addressed. Additionally, an overview and summary of a recent extensive literature survey of relevant measurement techniques aimed at reducing or eliminating the probability of field failures is presented. An assessment of potential gaps is also given, wherein the PV community could benefit from new research and demonstration efforts. This review is divided into three primary areas representing different parts of the c-Si PV supply chain: (1) feedstock production, crystallization and wafering; (2) cell manufacturing; and (3) module manufacturing.

  5. Electronic properties of epitaxial 6H silicon carbide

    International Nuclear Information System (INIS)

    Wessels, B.W.; Gatos, H.C.

    1977-01-01

    The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

  6. Stress testing on silicon carbide electronic devices for prognostics and health management.

    Energy Technology Data Exchange (ETDEWEB)

    Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Smith, Mark A.; Atcitty, Stanley

    2011-01-01

    Power conversion systems for energy storage and other distributed energy resource applications are among the drivers of the important role that power electronics plays in providing reliable electricity. Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) will help increase the performance and efficiency of power electronic equipment while condition monitoring (CM) and prognostics and health management (PHM) will increase the operational availability of the equipment and thereby make it more cost effective. Voltage and/or temperature stress testing were performed on a number of SiC devices in order to accelerate failure modes and to identify measureable shifts in electrical characteristics which may provide early indication of those failures. Those shifts can be interpreted and modeled to provide prognostic signatures for use in CM and/or PHM. Such experiments will also lead to a deeper understanding of basic device physics and the degradation mechanisms behind failure.

  7. Fuse Modeling for Reliability Study of Power Electronic Circuits

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Iannuzzo, Francesco; Blaabjerg, Frede

    2017-01-01

    This paper describes a comprehensive modeling approach on reliability of fuses used in power electronic circuits. When fuses are subjected to current pulses, cyclic temperature stress is introduced to the fuse element and will wear out the component. Furthermore, the fuse may be used in a large......, and rated voltage/current are opposed to shift in time to effect early breaking during the normal operation of the circuit. Therefore, in such cases, a reliable protection required for the other circuit components will not be achieved. The thermo-mechanical models, fatigue analysis and thermo...

  8. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p

  9. Tailoring electronic properties of multilayer phosphorene by siliconization

    Science.gov (United States)

    Malyi, Oleksandr I.; Sopiha, Kostiantyn V.; Radchenko, Ihor; Wu, Ping; Persson, Clas

    Controlling a thickness dependence of electronic properties for two-dimensional (2d) materials is among primary goals for their large-scale applications. Herein, employing a first-principles computational approach, we predict that Si interaction with multilayer phosphorene (2d-P) can result in the formation of highly stable 2d-SiP and 2d-SiP$_2$ compounds with a weak interlayer interaction. Our analysis demonstrates that these systems are semiconductors with band gap energies that can be governed by varying the thickness and stacking order. Specifically, siliconization of phosphorene allows to design 2d-SiP$_x$ materials with significantly weaker thickness dependence of electronic properties than that in 2d-P and to develop ways for their tailoring. We also reveal the spatial dependence of electronic properties for 2d-SiP$_x$ highlighting difference in effective band gaps for different layers. Particularly, our results show that central layers in the multilayer 2d systems determine overall electronic properties, while the role of the outermost layers is noticeably smaller.

  10. Selected Methods For Increases Reliability The Of Electronic Systems Security

    Directory of Open Access Journals (Sweden)

    Paś Jacek

    2015-11-01

    Full Text Available The article presents the issues related to the different methods to increase the reliability of electronic security systems (ESS for example, a fire alarm system (SSP. Reliability of the SSP in the descriptive sense is a property preservation capacity to implement the preset function (e.g. protection: fire airport, the port, logistics base, etc., at a certain time and under certain conditions, e.g. Environmental, despite the possible non-compliance by a specific subset of elements this system. Analyzing the available literature on the ESS-SSP is not available studies on methods to increase the reliability (several works similar topics but moving with respect to the burglary and robbery (Intrusion. Based on the analysis of the set of all paths in the system suitability of the SSP for the scenario mentioned elements fire events (device critical because of security.

  11. Non-destructive Reliability Evaluation of Electronic Device by ESPI

    International Nuclear Information System (INIS)

    Yoon, Sung Un; Kim, Koung Suk; Kang, Ki Soo; Jo, Seon Hyung

    2001-01-01

    This paper propose electronic speckle pattern interferometry(ESPI) for reliability evaluation of electronic device. Especially, vibration problem in a fan of air conditioner, motor of washing machine and etc. is important factor to design the devices. But, it is difficult to apply previous method, accelerometer to the devices with complex geometry. ESPI, non-contact measurement technique applies a commercial fan of air conditioner to vibration analysis. Vibration mode shapes, natural frequency and the range of the frequency are decided and compared with that of FEM analysis. In mechanical deign of new product, ESPI adds weak point of previous method to supply effective design information

  12. Junction Temperature Control for More Reliable Power Electronics

    DEFF Research Database (Denmark)

    Andresen, Markus; Ma, Ke; Buticchi, Giampaolo

    2018-01-01

    The thermal stress of power electronic components is one of the most important causes of their failure. Proper thermal management plays an important role for more reliable and cost-effective energy conversion. As one of the most vulnerable and expensive components, power semiconductor components ...... the desired cost-benefit tradeoff. This paper analyzes also the many open questions of this research area. Among them, it is worth highlighting that a verification of the actual lifetime extension is still missing....

  13. Investigation of carrier removal in electron irradiated silicon diodes

    International Nuclear Information System (INIS)

    Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

    1997-01-01

    We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

  14. Electrical Characterisation of electron beam exposure induced Defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

    2016-01-01

    The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

  15. Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

    Science.gov (United States)

    Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

    2018-06-01

    Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

  16. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

    International Nuclear Information System (INIS)

    Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

    2004-01-01

    The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

  17. Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics.

    Science.gov (United States)

    Xue, Zhaoguo; Sun, Mei; Dong, Taige; Tang, Zhiqiang; Zhao, Yaolong; Wang, Junzhuan; Wei, Xianlong; Yu, Linwei; Chen, Qing; Xu, Jun; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

    2017-12-13

    Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been established, while high resolution transmission electron microscopy analysis reveals a high quality monolike crystallinity in the line-shaped engineered SiNW springs. Excitingly, in situ scanning electron microscopy stretching and current-voltage characterizations also demonstrate a superelastic and robust electric transport carried by the SiNW springs even under large stretching of more than 200%. We suggest that this highly reliable line-shape programming approach holds a strong promise to extend the mature c-Si technology into the development of a new generation of high performance biofriendly and stretchable electronics.

  18. Electronic device for endosurgical skills training (EDEST): study of reliability.

    Science.gov (United States)

    Pagador, J B; Uson, J; Sánchez, M A; Moyano, J L; Moreno, J; Bustos, P; Mateos, J; Sánchez-Margallo, F M

    2011-05-01

    Minimally Invasive Surgery procedures are commonly used in many surgical practices, but surgeons need specific training models and devices due to its difficulty and complexity. In this paper, an innovative electronic device for endosurgical skills training (EDEST) is presented. A study on reliability for this device was performed. Different electronic components were used to compose this new training device. The EDEST was focused on two basic laparoscopic tasks: triangulation and coordination manoeuvres. A configuration and statistical software was developed to complement the functionality of the device. A calibration method was used to assure the proper work of the device. A total of 35 subjects (8 experts and 27 novices) were used to check the reliability of the system using the MTBF analysis. Configuration values for triangulation and coordination exercises were calculated as 0.5 s limit threshold and 800-11,000 lux range of light intensity, respectively. Zero errors in 1,050 executions (0%) for triangulation and 21 errors in 5,670 executions (0.37%) for coordination were obtained. A MTBF of 2.97 h was obtained. The results show that the reliability of the EDEST device is acceptable when used under previously defined light conditions. These results along with previous work could demonstrate that the EDEST device can help surgeons during first training stages.

  19. Compilation of the calculation elements of the electronic equipments reliability

    International Nuclear Information System (INIS)

    Lefevre, R.; D'Harcourt, A.; Dupuy, G.

    1968-01-01

    The aim of this work is to allow the practical execution of the estimated calculation of the electronic devices reliability and to standardize the source and the approach of the calculations while giving a systematic character to their execution mode. The systematic character of the calculations allows a comparison of the reliability of different materials and a rapid control of the calculations validity; at last, it brings out the use conditions of all the components of a set. A reliability calculation made according to the method described here reveals: -components badly used -the relative influence on the reliability of the set, of a component or a components group taking into account of the number, of the characteristics and of the use of these ones. At last, the results of the calculation allows to organize the exploitation (availability) and the maintenance (staff, stock of components) of the materials. The failure rates given in this book are only relating to the components service-life and do not correspond to precocious failures. (authors) [fr

  20. Surface and Core Electronic Structure of Oxidized Silicon Nanocrystals

    Directory of Open Access Journals (Sweden)

    Noor A. Nama

    2010-01-01

    Full Text Available Ab initio restricted Hartree-Fock method within the framework of large unit cell formalism is used to simulate silicon nanocrystals between 216 and 1000 atoms (1.6–2.65 nm in diameter that include Bravais and primitive cell multiples. The investigated properties include core and oxidized surface properties. Results revealed that electronic properties converge to some limit as the size of the nanocrystal increases. Increasing the size of the core of a nanocrystal resulted in an increase of the energy gap, valence band width, and cohesive energy. The lattice constant of the core and oxidized surface parts shows a decreasing trend as the nanocrystal increases in a size that converges to 5.28 Ǻ in a good agreement with the experiment. Surface and core convergence to the same lattice constant reflects good adherence of oxide layer at the surface. The core density of states shows highly degenerate states that split at the oxygenated (001-(1×1 surface due to symmetry breaking. The nanocrystal surface shows smaller gap and higher valence and conduction bands when compared to the core part, due to oxygen surface atoms and reduced structural symmetry. The smaller surface energy gap shows that energy gap of the nanocrystal is controlled by the surface part. Unlike the core part, the surface part shows a descending energy gap that proves its obedience to quantum confinement effects. Nanocrystal geometry proved to have some influence on all electronic properties including the energy gap.

  1. Low-temperature epitaxy of silicon by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

    2007-07-16

    In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

  2. Reliability of high power electron accelerators for radiation processing

    International Nuclear Information System (INIS)

    Zimek, Z.

    2011-01-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  3. Reliability of high power electron accelerators for radiation processing

    Energy Technology Data Exchange (ETDEWEB)

    Zimek, Z. [Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, Warsaw (Poland)

    2011-07-01

    Accelerators applied for radiation processing are installed in industrial facilities where accelerator availability coefficient should be at the level of 95% to fulfill requirements according to industry standards. Usually the exploitation of electron accelerator reviles the number of short and few long lasting failures. Some technical shortages can be overcome by practical implementation the experience gained in accelerator technology development by different accelerator manufactures. The reliability/availability of high power accelerators for application in flue gas treatment process must be dramatically improved to meet industrial standards. Support of accelerator technology dedicated for environment protection should be provided by governmental and international institutions to overcome accelerator reliability/availability problem and high risk and low direct profit in this particular application. (author)

  4. Vertically etched silicon nano-rods as a sensitive electron detector

    International Nuclear Information System (INIS)

    Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

    2015-01-01

    We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

  5. Reliability of planar silicon transistors exposed to 60Co γ rays

    International Nuclear Information System (INIS)

    Blin, A.; Le Ber, J.

    1966-01-01

    This report gives an account of results obtained during investigations on the reliability of silicon Planar Transistors, irradiated by the 60 Co γ rays. We consider in a first part the variation of the average values of the parameters of the lots under test. Then, a more complete statistical study is carried out (distribution of the values of the parameters within the lots; research of correlations, etc. ). It is clearly stated and shown that evaluation of the degradation of the gain of transistors depends on: the conditions of measurement (voltage, current), after irradiation; the polarisation of the elements during irradiation; the origin of manufacture of the lots under test (4 manufacturers). We show then the difficulties met to predict the behaviour of the transistors under radiation stress, and attempt is made to define practical rules for design engineers. (author) [fr

  6. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  7. Control of climatics environments to enhance reliability of electronics systems

    International Nuclear Information System (INIS)

    Sekhon, K.S.

    1979-01-01

    The techniques to control temperature and humidity to reduce failures in semiconductor devices are presented. The maximum operating junction temperature affects the electronic system reliability, and the equation for the junction temperature of the device shows that internal and external thermal resistances affect component life. Junction temperature reductions up to 60 C were achieved by the development of heat pipes for microcircuits, which will enhance electronics life by 32 times. Humidity control by improved sealing and use of heaters to prevent moisture condensation proved difficult and costly, and high pressure dehydrators were heavy and expensive. Therefore, low pressure dehydrator was developed which is smaller, lighter, and less expensive. The development of low pressure dehumidifying system including test data is presented

  8. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  9. Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

  10. Fabrication of a novel silicon single electron transistor for Si:P quantum computer devices

    International Nuclear Information System (INIS)

    Angus, S.J.; Smith, C.E.A.; Gauja, E.; Dzurak, A.S.; Clark, R.G.; Snider, G.L.

    2004-01-01

    Full text: Quantum computation relies on the successful measurement of quantum states. Single electron transistors (SETs) are known to be able to perform fast and sensitive charge measurements of solid state qubits. However, due to their sensitivity, SETs are also very susceptible to random charge fluctuations in a solid-state materials environment. In previous dc transport measurements, silicon-based SETs have demonstrated greater charge stability than A1/A1 2 O 3 SETs. We have designed and fabricated a novel silicon SET architecture for a comparison of the noise characteristics of silicon and aluminium based devices. The silicon SET described here is designed for controllable and reproducible low temperature operation. It is fabricated using a novel dual gate structure on a silicon-on-insulator substrate. A silicon quantum wire is formed in a 100nm thick high-resistivity superficial silicon layer using reactive ion etching. Carriers are induced in the silicon wire by a back gate in the silicon substrate. The tunnel barriers are created electrostatically, using lithographically defined metallic electrodes (∼40nm width). These tunnel barriers surround the surface of the quantum wire, thus producing excellent electrostatic confinement. This architecture provides independent control of tunnel barrier height and island occupancy, thus promising better control of Coulomb blockade oscillations than in previously investigated silicon SETs. The use of a near intrinsic silicon substrate offers compatibility with Si:P qubits in the longer term

  11. Strong coupling of a single electron in silicon to a microwave photon

    Science.gov (United States)

    Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

    2017-01-01

    Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

  12. Reliability metrics extraction for power electronics converter stressed by thermal cycles

    DEFF Research Database (Denmark)

    Ma, Ke; Choi, Uimin; Blaabjerg, Frede

    2017-01-01

    Due to the continuous demands for highly reliable and cost-effective power conversion, the quantified reliability performances of the power electronics converter are becoming emerging needs. The existing reliability modelling approaches for the power electronics converter mainly focuses on the pr...... performance of power electronics system. The final predicted results showed good accuracy with much more reliability information compared to the existing approaches, and the quantified reliability correlation to the mission profiles of converter is mathematically established....

  13. Charging effects during focused electron beam induced deposition of silicon oxide

    NARCIS (Netherlands)

    de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

    2011-01-01

    This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

  14. Study of position resolution and electron-hadron separation of electromagnetic calorimeter with a silicon structure

    International Nuclear Information System (INIS)

    Gorodnichev, V.B.; Kachanov, V.A.; Khodyrev, V.Yu.; Kurchaninov, L.L.; Rykali, V.V.; Solovianov, V.L.; Ukhalov, M.N.

    1993-01-01

    The maximum shower silicon strip detectors embedded in a module of sandwich-type electromagnetic calorimeter have been tested. The position resolution at different depths of the silicon structure has been measured. The results on electron-hadron separation obtained as a byproduct in this study are presented, and possibility of their improvement is discussed. 8 refs., 10 figs., 1 tab

  15. Observations of silicon carbide by high resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, D.J.; Jepps, N.W.; Page, T.F.

    1978-01-01

    High resolution transmission electron microscopy techniques, principally involving direct lattice imaging, have been used as part of a study of the crystallography and phase transformation mechanics of silicon carbide polytypes. In particular, the 3C (cubic) and 6H (hexagonal) polytypes have been examined together with partially transformed structural mixtures. Although direct observation of two-dimensional atomic structures was not possible at an operating voltage of 100 kV, considerable microstructural information has been obtained by careful choice of the experimental conditions. In particular, tilted beam observations of the 0.25 nm lattice fringes have been made in the 3C polytype for two different brace 111 brace plane arrays in order to study the dimensions and coherency of finely-twinned regions together with brace 0006 brace and brace 1 0 bar1 2 brace lattice images in the 6H polytype which allow the detailed stacking operations to be resolved. Lower resolution lattice images formed with axial illumination have also been used to study the nature of the 3C → 6H transformation and results are presented showing that the transformation interface may originate with fine twinning of the 3C structure followed by growth of the resultant 6H regions. Observations have been made of the detailed stepped structure of this interface together with the stacking fault distribution in the resultant 6H material. (author)

  16. Electronic transport through organophosphonate monolayers on silicon/silicon dioxide substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bora, Achyut; Pathak, Anshuma; Tornow, Marc [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Liao, Kung-Ching; Schwartz, Jeffrey [Department of Chemistry, Princeton University, NJ (United States); Cattani-Scholz, Anna; Abstreiter, Gerhard [Walter Schottky Institut, TU Muenchen (Germany)

    2011-07-01

    Understanding the electronic transport through layered systems of organic functional layers on semiconductor surfaces is of major importance for future applications in nanoelectronics, photovoltaics and sensors. We have prepared self-assembled monolayers (SAMs) of 9,10-diphenyl-2,6-diphosphono-anthracene and 11-hydroxyundecyl phosphonic acid precursors on highly p-doped silicon surfaces coated with a 1 nm SiO{sub 2} layer. Contact angle, AFM and ellipsometry evidenced the homogeneity of the formed SAMs, and their thickness was determined to be 0.82{+-}0.07 nm and 1.13{+-}0.09 nm, respectively. We provided large area electrical contacts on top of the SAMs by a hanging Hg drop electrode. The measured I-V characteristics revealed an enhanced conductance of the aromatic vs. the aliphatic compounds, with current densities of the order of 10 A/m{sup 2} and 0.01 A/m{sup 2}, at 0.5 V, respectively. We analyzed the data in terms of non-resonant tunneling through the combined oxide-SAM barrier and found good qualitative agreement up to 0.2 V bias. Preliminary measurements on organized bilayers of anthracene bisphosphonates that were grown using techniques of coordination chemistry are discussed, too.

  17. Ab initio electronic properties of dual phosphorus monolayers in silicon

    DEFF Research Database (Denmark)

    Drumm, Daniel W.; Per, Manolo C.; Budi, Akin

    2014-01-01

    In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon...

  18. Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

    Czech Academy of Sciences Publication Activity Database

    Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

    2016-01-01

    Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

  19. Photoconductivity relaxation and electron transport in macroporous silicon structures

    Directory of Open Access Journals (Sweden)

    L.A. Karachevtseva

    2017-12-01

    Full Text Available Kinetics and temperature dependence of photoconductivity were measured in macroporous silicon at 80…300 K after light illumination with the wavelength 0.9 μm. The influence of mechanisms of the charge carrier transport through the macropore surface barrier on the kinetics of photoconductivity at various temperatures was investigated. The kinetics of photoconductivity distribution in macroporous silicon and Si substrate has been calculated using the finite-difference time-domain method. The maximum of photoconductivity has been found both in the layer of macroporous silicon and in the monocrystalline substrate. The kinetics of photoconductivity distribution in macroporous silicon showed rapid relaxation of the photoconductivity maximum in the layer of macroporous silicon and slow relaxation of it in the monocrystalline substrate.

  20. Roadmap for integration of InP based photonics and silicon electronics

    NARCIS (Netherlands)

    Williams, K.A.

    2015-01-01

    We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

  1. Reliability and considerations of electronic voting, a global vision

    Directory of Open Access Journals (Sweden)

    Jussibeth Tatiana Places Chungata

    2017-03-01

    Full Text Available This article is intended to perform an analysis of all the aspects that comprise and revolve around the use or implementation of new technologies in election processes such as automation of democracy; this is done through the collection of bibliographic information from articles, books, and other sources on concepts, differences, comparisons, methodology of citizen participation, experiences, among others. With the purpose of establishing the utility or inconveniences that may present this electronic voting system to use it in real elections. There are realized general descriptions of every topic, where little by little possible factors of adoption are explored or I reject to this new technology, clarifying in the functionality, used elements and factors to comply. As a result, it reflects on the positive and negative impact that have these systems in society, giving points to consider about this Automation at different stages which comprise the electoral processes, from the construction, configuration, storage up to the transmission and consolidation of results. Is leaves clear them criteria that is should evaluate a system of vote electronic that van from reliability to effectiveness in their processes, to determine the need and relationship of costs - benefits. Without leaving of side our country, there is described the current condition that has the system of electronic vote in our electoral processes, which until now has not been implemented, only has performed testing of printing in our community.

  2. Electron spin resonance and spin-valley physics in a silicon double quantum dot.

    Science.gov (United States)

    Hao, Xiaojie; Ruskov, Rusko; Xiao, Ming; Tahan, Charles; Jiang, HongWen

    2014-05-14

    Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin-orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin-valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin-valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

  3. Simultaneous electron-proton irradiation of crucible grown and float-zone silicon solar cells

    International Nuclear Information System (INIS)

    Bernard, J.

    1974-01-01

    The realisation of an irradiation chamber which permits simultaneous irradiations by electrons, protons, photons and in-situ measurements of solar cells main parameters (diffusion length, I.V. characteristics) is described. Results obtained on 20 solar cells n/p 10Ωcm made in silicon pulled crystals and 20 solar cells n/p 10Ωcm made in silicon float-zone simultaneously irradiated with electrons and photons are given [fr

  4. Improving Electronic Sensor Reliability by Robust Outlier Screening

    Directory of Open Access Journals (Sweden)

    Federico Cuesta

    2013-10-01

    Full Text Available Electronic sensors are widely used in different application areas, and in some of them, such as automotive or medical equipment, they must perform with an extremely low defect rate. Increasing reliability is paramount. Outlier detection algorithms are a key component in screening latent defects and decreasing the number of customer quality incidents (CQIs. This paper focuses on new spatial algorithms (Good Die in a Bad Cluster with Statistical Bins (GDBC SB and Bad Bin in a Bad Cluster (BBBC and an advanced outlier screening method, called Robust Dynamic Part Averaging Testing (RDPAT, as well as two practical improvements, which significantly enhance existing algorithms. Those methods have been used in production in Freescale® Semiconductor probe factories around the world for several years. Moreover, a study was conducted with production data of 289,080 dice with 26 CQIs to determine and compare the efficiency and effectiveness of all these algorithms in identifying CQIs.

  5. Reliability Analysis of the CERN Radiation Monitoring Electronic System CROME

    CERN Document Server

    AUTHOR|(CDS)2126870

    For the new in-house developed CERN Radiation Monitoring Electronic System (CROME) a reliability analysis is necessary to ensure compliance with the statu-tory requirements regarding the Safety Integrity Level. The required Safety Integrity Level by IEC 60532 standard is SIL 2 (for the Safety Integrated Functions Measurement, Alarm Triggering and Interlock Triggering). The first step of the reliability analysis was a system and functional analysis which served as basis for the implementation of the CROME system in the software “Iso-graph”. In the “Prediction” module of Isograph the failure rates of all components were calculated. Failure rates for passive components were calculated by the Military Standard 217 and failure rates for active components were obtained from lifetime tests by the manufacturers. The FMEA was carried out together with the board designers and implemented in the “FMECA” module of Isograph. The FMEA served as basis for the Fault Tree Analysis and the detection of weak points...

  6. Thermal Management and Reliability of Power Electronics and Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, Sreekant

    2016-08-03

    Increasing the number of electric-drive vehicles (EDVs) on America's roads has been identified as a strategy with near-term potential for dramatically decreasing the nation's dependence on oil -- by the U.S. Department of Energy, the federal cross-agency EV-Everywhere Challenge, and the automotive industry. Mass-market deployment will rely on meeting aggressive technical targets, including improved efficiency and reduced size, weight, and cost. Many of these advances will depend on optimization of thermal management. Effective thermal management is critical to improving the performance and ensuring the reliability of EDVs. Efficient heat removal makes higher power densities and lower operating temperatures possible, and in turn enables cost and size reductions. The National Renewable Energy Laboratory (NREL), along with DOE and industry partners is working to develop cost-effective thermal management solutions to increase device and component power densities. In this presentation, the activities in recent years related to thermal management and reliability of automotive power electronics and electric machines will be presented.

  7. Thermal Management and Reliability of Power Electronics and Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, Sreekant

    2016-06-13

    Increasing the number of electric-drive vehicles (EDVs) on America's roads has been identified as a strategy with near-term potential for dramatically decreasing the nation's dependence on oil - by the U.S. Department of Energy, the federal cross-agency EV-Everywhere Challenge, and the automotive industry. Mass-market deployment will rely on meeting aggressive technical targets, including improved efficiency and reduced size, weight, and cost. Many of these advances will depend on optimization of thermal management. Effective thermal management is critical to improving the performance and ensuring the reliability of EDVs. Efficient heat removal makes higher power densities and lower operating temperatures possible, and in turn enables cost and size reductions. The National Renewable Energy Laboratory (NREL), along with DOE and industry partners is working to develop cost-effective thermal management solutions to increase device and component power densities. In this presentation, the activities in recent years related to thermal management and reliability of automotive power electronics and electric machines are presented.

  8. Electronic properties of interfaces produced by silicon wafer hydrophilic bonding

    Energy Technology Data Exchange (ETDEWEB)

    Trushin, Maxim

    2011-07-15

    The thesis presents the results of the investigations of electronic properties and defect states of dislocation networks (DNs) in silicon produced by wafers direct bonding technique. A new insight into the understanding of their very attractive properties was succeeded due to the usage of a new, recently developed silicon wafer direct bonding technique, allowing to create regular dislocation networks with predefined dislocation types and densities. Samples for the investigations were prepared by hydrophilic bonding of p-type Si (100) wafers with same small misorientation tilt angle ({proportional_to}0.5 ), but with four different twist misorientation angles Atw (being of < , 3 , 6 and 30 , respectively), thus giving rise to the different DN microstructure on every particular sample. The main experimental approach of this work was the measurements of current and capacitance of Schottky diodes prepared on the samples which contained the dislocation network at a depth that allowed one to realize all capabilities of different methods of space charge region spectroscopy (such as CV/IV, DLTS, ITS, etc.). The key tasks for the investigations were specified as the exploration of the DN-related gap states, their variations with gradually increasing twist angle Atw, investigation of the electrical field impact on the carrier emission from the dislocation-related states, as well as the establishing of the correlation between the electrical (DLTS), optical (photoluminescence PL) and structural (TEM) properties of DNs. The most important conclusions drawn from the experimental investigations and theoretical calculations can be formulated as follows: - DLTS measurements have revealed a great difference in the electronic structure of small-angle (SA) and large-angle (LA) bonded interfaces: dominating shallow level and a set of 6-7 deep levels were found in SA-samples with Atw of 1 and 3 , whereas the prevalent deep levels - in LA-samples with Atw of 6 and 30 . The critical twist

  9. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    Science.gov (United States)

    Kang, Jin Sung

    Inkjet printing of electrode using copper nanoparticle ink is presented. Electrode was printed on a flexible glass epoxy composite substrate using drop on demand piezoelectric dispenser and was sintered at 200°C in N 2 gas condition. The printed electrodes were made with various widths and thicknesses. Surface morphology of electrode was analyzed using scanning electron microscope (SEM) and atomic force microscope (AFM). Reliable dimensions for printed electronics were found from this study. Single-crystalline silicon solar cells were tested under four-point bending to find the feasibility of directly integrating them onto a carbon fiber/epoxy composite laminate. These solar cells were not able to withstand 0.2% strain. On the other hand, thin-film amorphous silicon solar cells were subjected to flexural fatigue loadings. The current density-voltage curves were analyzed at different cycles, and there was no noticeable degradation on its performance up to 100 cycles. A multifunctional composite laminate which can harvest and store solar energy was fabricated using printed electrodes. The integrated printed circuit board (PCB) was co-cured with a carbon/epoxy composite laminate by the vacuum bag molding process in an autoclave; an amorphous silicon solar cell and a thin-film solid state lithium-ion (Li-ion) battery were adhesively joined and electrically connected to a thin flexible PCB; and then the passive components such as resistors and diodes were electrically connected to the printed circuit board by silver pasting. Since a thin-film solid state Li-ion battery was not able to withstand tensile strain above 0.4%, thin Li-ion polymer batteries were tested under various mechanical loadings and environmental conditions to find the feasibility of using the polymer batteries for our multifunctional purpose. It was found that the Li-ion polymer batteries were stable under pressure and tensile loading without any noticeable degradation on its charge and discharge

  10. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2014-01-01

    Brain's stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components

  11. Amorphous NEA Silicon Photocathodes - A Robust RF Gun Electron Source. Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2009-01-01

    Amorphous silicon (a-Si) has been shown to have great promise as a negative electron affinity visible wavelength photocathode suitable for radio frequency (RF) gun systems. The specific operating wavelength can be shifted by growing it as a germanium alloy (a-Si(1-x)Ge(x)) rather than as pure silicon. This class of photoemitters has been shown to possess a high degree of immunity to charged particle flux. Such particle flux can be a significant problem in the operation of other photocathodes in RF gun systems. Its emission characteristics in the form of current per unit area, or current density, and emission angle, or beam spread are well matched for use in RF guns. Photocathodes made of a-Si can be fabricated on a variety of substrates including those most commonly employed in RF gun systems. Such photocathodes can be made for operation in either transmission or reflection mode. By growing them utilizing radio frequency plasma enhanced chemical vapor deposition, the unit cost is quite low, the quality is high and it is straightforward to grow custom size substrates and full or limited regions to confine the electron emission to the desired area. Quality emitters have been fabricated on tantalum, molybdenum, tungsten, titanium, copper, stainless steel, float glass, borosilicate glass and gallium arsenide. In addition to performing well in dedicated test chambers, a-Si photocathodes have been shown to function well in self-contained vacuum tubes. In this employment, they are subjected to a strenuous environment. Successful operation in this configuration provides additional confidence in their application to high energy linac photoinjectors and potentially as part of reliable, low cost photocathode driven RF gun systems that could become ready replacements for the diode and triode guns used on medical accelerators. Their applications in stand-alone vacuum tubes is just beginning to be explored.

  12. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  13. Performance tests of developed silicon strip detector by using a 150 GeV electron beam

    International Nuclear Information System (INIS)

    Hyun, Hyojung; Jung, Sunwoo; Kah, Dongha; Kang, Heedong; Kim, Hongjoo; Park, Hwanbae

    2008-01-01

    We manufactured and characterized a silicon micro-strip detector to be used in a beam tracker. A silicon detector features a DC-coupled silicon strip sensor with VA1 Prime2 analog readout chips. The silicon strip sensors have been fabricated on 5-in. wafers at Electronics and Telecommunications Research Institute (Daejeon, Korea). The silicon strip sensor is single-sided and has 32 channels with a 1 mm pitch, and its active area is 3.2 by 3.2 cm 2 with 380 μm thickness. The readout electronics consists of VA hybrid, VA Interface, and FlashADC and Control boards. Analog signals from the silicon strip sensor were being processed by the analog readout chips on the VA hybrid board. Analog signals were then changed into digital signals by a 12 bit 25 MHz FlashADC. The digital signals were read out by the Linux-operating PC through the FlashADC-USB2 interface. The DAQ system and analysis programs were written in the framework of ROOT package. The beam test with the silicon detector had been performed at CERN beam facility. We used a 150 GeV electron beam out of the SPS(Super Proton Synchrotron) H2 beam line. We present beam test setup and measurement result of signal-to-noise ratio of each strip channel. (author)

  14. Silicon-germanium (Sige) nanostructures production, properties and applications in electronics

    CERN Document Server

    Usami, N

    2011-01-01

    Nanostructured silicon-germanium (SiGe) provides the prospect of novel and enhanced electronic device performance. This book reviews the materials science and technology of SiGe nanostructures, including crystal growth, fabrication of nanostructures, material properties and applications in electronics.$bNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and mo...

  15. Electron Spin Resonance Experiments on a Single Electron in Silicon Implanted with Phosphorous

    Science.gov (United States)

    Luhman, Dwight R.; Nguyen, K.; Tracy, L. A.; Carr, S.; Borchardt, J.; Bishop, N.; Ten Eyck, G.; Pluym, T.; Wendt, J.; Lilly, M. P.; Carroll, M. S.

    2015-03-01

    In this talk we will discuss the results of our ongoing experiments involving electron spin resonance (ESR) on a single electron in a natural silicon sample. The sample consists of an SET, defined by lithographic polysilicon gates, coupled to nearby phosphorous donors. The SET is used to detect charge transitions and readout the spin of the electron being investigated with ESR. The measurements were done with the sample at dilution refrigerator temperatures in the presence of a 1.3 T magnetic field. We will present data demonstrating Rabi oscillations of a single electron in this system as well as measurements of the coherence time, T2. We will also discuss our results using these and various other pulsing schemes in the context of a donor-SET system. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  16. A new approach for two-terminal electronic memory devices - Storing information on silicon nanowires

    Science.gov (United States)

    Saranti, Konstantina; Alotaibi, Sultan; Paul, Shashi

    2016-06-01

    The work described in this paper focuses on the utilisation of silicon nanowires as the information storage element in flash-type memory devices. Silicon nanostructures have attracted attention due to interesting electrical and optical properties, and their potential integration into electronic devices. A detailed investigation of the suitability of silicon nanowires as the charge storage medium in two-terminal non-volatile memory devices are presented in this report. The deposition of the silicon nanostructures was carried out at low temperatures (less than 400 °C) using a previously developed a novel method within our research group. Two-terminal non-volatile (2TNV) memory devices and metal-insulator-semiconductor (MIS) structures containing the silicon nanowires were fabricated and an in-depth study of their characteristics was carried out using current-voltage and capacitance techniques.

  17. Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

    International Nuclear Information System (INIS)

    Castoldi, A.; Rehak, P.

    1995-01-01

    This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

  18. Real-time transmission electron microscope observation of gold nanoclusters diffusing into silicon at room temperature

    International Nuclear Information System (INIS)

    Ishida, Tadashi; Nakajima, Yuuki; Fujita, Hiroyuki; Endo, Junji; Collard, Dominique

    2009-01-01

    Gold diffusion into silicon at room temperature was observed in real time with atomic resolution. Gold nanoclusters were formed on a silicon surface by an electrical discharge between a silicon tip and a gold coated tip inside an ultrahigh-vacuum transmission electron microscope (TEM) specimen chamber. At the moment of the gold nanocluster deposition, the gold nanoclusters had a crystalline structure. The crystalline structure gradually disappeared due to the interdiffusion between silicon and gold as observed after the deposition of gold nanoclusters. The shape of the nanocluster gradually changed due to the gold diffusion into the damaged silicon. The diffusion front between silicon and gold moved toward the silicon side. From the observations of the diffusion front, the gold diffusivity at room temperature was extracted. The extracted activation energy, 0.21 eV, matched the activation energy in bulk diffusion between damaged silicon and gold. This information is useful for optimizing the hybridization between solid-state and biological nanodevices in which gold is used as an adhesive layer between the two devices.

  19. Conventional and 360 degree electron tomography of a micro-crystalline silicon solar cell

    DEFF Research Database (Denmark)

    Duchamp, Martial; Ramar, Amuthan; Kovács, András

    2011-01-01

    Bright-field (BF) and annular dark-field (ADF) electron tomography in the transmission electron microscope (TEM) are used to characterize elongated porous regions or cracks (simply referred to as cracks thereafter) in micro-crystalline silicon (μc-Si:H) solar cell. The limitations of inferring...

  20. Novel silicon allotropes: Stability, mechanical, and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Qingyang; Chai, Changchun; Zhao, Yingbo; Yang, Yintang; Yu, Xinhai; Liu, Yang; Zhang, Junqin [Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China); Wei, Qun, E-mail: weiaqun@163.com; Yao, Ronghui [School of Physics and Optoelectronic Engineering, Xidian University, Xi' an 710071 (China); Yan, Haiyan [College of Chemistry and Chemical Engineering, Baoji University of Arts and Sciences, Baoji 721013 (China); Xing, Mengjiang [Faculty of Information Engineering and Automation, Kunming University of Science and Technology, Kunming 650051 (China)

    2015-11-14

    One quasi-direct gap phase (Amm2) and three indirect gap phases (C2/m-16, C2/m-20, and I-4) of silicon allotropes are proposed. The detailed theoretical study on the structure, density of states, elastic properties, sound velocities, and Debye temperature of these four phases is carried out by using first principles calculations. The elastic constants of these four phases are calculated by strain-stress method. The elastic constants and the phonon calculations manifest all novel silicon allotropes in this paper are mechanically and dynamically stable at ambient condition. The B/G values indicate that these four phases of silicon are brittle materials at ambient pressure. The anisotropy properties show that C2/m-20 phase exhibits a larger anisotropy in its elastic modulus, shear elastic anisotropic factors, and several anisotropic indices than others. We have found that the Debye temperature of the four novel silicon allotropes gradually reduces in the order of C2/m-20 > Amm2 > C2/m-16 > I-4 at ambient pressure.

  1. Effects of keV electron irradiation on the avalanche-electron generation rates of three donors on oxidized silicon

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.

    1983-01-01

    After keV electron beam irradiation of oxidized silicon, the avalanche-electron-injection generation rates and densities of the bulk compensating donor, the interface states, and the turnaround trap all increase. Heating at 200 0 C can anneal out these three donor-like traps, however, it cannot restore the generation rates back to their original and lower pre-keV electron irradiation values. The experimental results also indicate that all three traps may be related to the same mobile impurity species whose bonds are loosened by the keV electrons and then broken or released by the avalanche injected electrons

  2. Towards neuromorphic electronics: Memristors on foldable silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-11-01

    The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

  3. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Energy Technology Data Exchange (ETDEWEB)

    Sauerzopf, Clemens, E-mail: clemens.sauerzopf@oeaw.ac.at; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-21

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  4. Intelligent Front-end Electronics for Silicon photodetectors (IFES)

    Science.gov (United States)

    Sauerzopf, Clemens; Gruber, Lukas; Suzuki, Ken; Zmeskal, Johann; Widmann, Eberhard

    2016-05-01

    While high channel density can be easily achieved for big experiments using custom made microchips, providing something similar for small and medium size experiments imposes a challenge. Within this work we describe a novel and cost effective solution to operate silicon photodetectors such as silicon photo multipliers (SiPM). The IFES modules provide the bias voltage for the detectors, a leading edge discriminator featuring time over threshold and a differential amplifier, all on one printed circuit board. We demonstrate under realistic conditions that the module is usable for high resolution timing measurements exploiting both charge and time information. Furthermore we show that the modules can be easily used in larger detector arrays. All in all this confirms that the IFES modules are a viable option for a broad range of experiments if cost-effectiveness and small form factor are required.

  5. Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

    KAUST Repository

    Ali, Haider

    2017-08-15

    In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.

  6. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  7. Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths.

    Science.gov (United States)

    Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang

    2015-11-13

    The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.

  8. Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

    International Nuclear Information System (INIS)

    Griessbach, Irmgard; Lapp, Markus; Bohsung, Joerg; Gademann, Guenther; Harder, Dietrich

    2005-01-01

    Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield

  9. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    OpenAIRE

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

  10. On electronic structure of polymer-derived amorphous silicon carbide ceramics

    Science.gov (United States)

    Wang, Kewei; Li, Xuqin; Ma, Baisheng; Wang, Yiguang; Zhang, Ligong; An, Linan

    2014-06-01

    The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

  11. Electron spin resonance signal from a tetra-interstitial defect in silicon

    CERN Document Server

    Mchedlidze, T

    2003-01-01

    The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

  12. Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics

    DEFF Research Database (Denmark)

    Wang, Huai; Liserre, Marco; Blaabjerg, Frede

    2014-01-01

    Power electronics has progressively gained important status in power generation, distribution and consumption. With more than 70% of electricity processed through power electronics, recent research endeavors to improve the reliability of power electronic systems to comply with more stringent...... constraints on cost, safety and availability in various applications. This paper serves to give an overview of the major aspects of reliability in power electronics and to address the future trends in this multidisciplinary research direction. The ongoing paradigm shift in reliability research is presented...... first. Then the three major aspects of power electronics reliability are discussed, respectively, which cover from physics-of-failure analysis of critical power elec-tronic components, state-of-the-art design for reliability process and robustness validation, and intelligent control and condition...

  13. Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Carriere, B.; Deville, J.P.; El Maachi, A.

    1987-06-01

    The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

  14. The electronic configuration of substitutional Fe in silicon

    CERN Document Server

    Weyer, G; Fanciulli, M; Fedosseev, V; Gunnlaugsson, H P; Mishin, V I; Sielemann, R

    1999-01-01

    Ion implantations of radioactive /sup 57/Mn/sup +/ into differently doped silicon single crystals held at 300-600 K have been utilized for /sup 57/Fe Mossbauer studies of interstitial and substitutional Fe. Site and charge state assignments have been made on the basis of the determined hyperfine interaction parameters and Debye temperatures. Substantial fractions of substitutional /sup 57/Mn probe atoms are proposed to occur due to annealing reactions. This site is maintained in the subsequent decay to /sup 57/Fe by

  15. A Numerical Study on Phonon Spectral Contributions to Thermal Conduction in Silicon-on-Insulator Transistor Using Electron-Phonon Interaction Model

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hyung-sun; Koh, Young Ha; Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

    2017-06-15

    The aim of this study is to understand the phonon transfer characteristics of a silicon thin film transistor. For this purpose, the Joule heating mechanism was considered through the electron-phonon interaction model whose validation has been done. The phonon transport characteristics were investigated in terms of phonon mean free path for the variations in the device power and silicon layer thickness from 41 nm to 177 nm. The results may be used for developing the thermal design strategy for achieving reliability and efficiency of the silicon-on-insulator (SOI) transistor, further, they will increase the understanding of heat conduction in SOI systems, which are very important in the semiconductor industry and the nano-fabrication technology.

  16. Reliability Oriented Circuit Design For Power Electronics Applications

    DEFF Research Database (Denmark)

    Sintamarean, Nicolae Cristian

    is presented. Chapter 3 presents the electro-thermal model validation and the reliability studies performed by the proposed tool. The chapter ends with a detailed lifetime analysis, which emphasizes the mission-profile variation and gate-driver parameters variation impact on the PV-inverter devices lifetime......Highly reliable components are required in order to minimize the downtime during the lifetime of the converter and implicitly the maintenance costs. Therefore, the design of high reliable converters under constrained reliability and cost is a great challenge to be overcome in the future....... Moreover, the impact of the mission-profile sampling time on the lifetime estimation accuracy is also determined. The second part of the thesis introduced in Chapter 4, presents a novel gate-driver concept which reduces the dependency of the device power losses variations on the device loading variations...

  17. Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

    Science.gov (United States)

    Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

    2018-05-01

    Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

  18. Irradiation of electron with high energy induced micro-crystallization of amorphous silicon

    International Nuclear Information System (INIS)

    Zhong Yule; Huang Junkai; Liu Weiping; Li Jingna

    2001-01-01

    Amorphous silicon is amorphous alloy of Si-H. It is random network of silicon with some hydrogen. And its structure has many unstable bonds as weak bonds of Si-Si and distortion bonds of all kinds. The bonds was broken or was out of shape by light and electrical ageing. It induced increase of defective state that causes character of material going to bad. This drawback will be overcome after micro-crystallization of amorphous silicon. It was discovered that a-Si:H was micro-crystallized by irradiated of electrons with energy of 0.3-0.5 MeV, density of electronic beam of 1.3 x 10 19 cm -1 s -1 and irradiated time of 10-600 s. Size of grain is 10-20 nm. Thick of microcrystalline lager is 25-250 nm

  19. Dissolution chemistry and biocompatibility of silicon- and germanium-based semiconductors for transient electronics.

    Science.gov (United States)

    Kang, Seung-Kyun; Park, Gayoung; Kim, Kyungmin; Hwang, Suk-Won; Cheng, Huanyu; Shin, Jiho; Chung, Sangjin; Kim, Minjin; Yin, Lan; Lee, Jeong Chul; Lee, Kyung-Mi; Rogers, John A

    2015-05-06

    Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycrystalline silicon, amorphous silicon, silicon-germanium, and germanium in aqueous solutions of various pH values and temperatures. In vitro cellular toxicity evaluations demonstrate the biocompatibility of the materials and end products of dissolution, thereby supporting their potential for use in biodegradable electronics. A fully dissolvable thin-film solar cell illustrates the ability to integrate these semiconductors into functional systems.

  20. Electronic properties of intrinsic and doped amorphous silicon carbide films

    International Nuclear Information System (INIS)

    Vetter, M.; Voz, C.; Ferre, R.; Martin, I.; Orpella, A.; Puigdollers, J.; Andreu, J.; Alcubilla, R.

    2006-01-01

    Hydrogenated amorphous silicon carbide (a-SiC x : H) films have shown excellent surface passivation of crystalline silicon. With the aim of large area deposition of these films the influence of the rf plasma power was investigated. It is found that homogenous deposition with effective surface recombination velocity lower than 100 cms -1 is possible up to 6'' diameter in a simple parallel plate reactor by optimizing deposition parameters. For application in solar cell processes the conductivity of these a-SiC x : H films might become of importance since good surface passivation results from field-effect passivation which needs an insulating dielectric layer. Therefore, the temperature dependence of the dark dc conductivity of these films was investigated in the temperature range from - 20 to 260 deg. C. Two transition temperatures, T s ∼80 deg. C and T s ∼170 deg. C, were found where conductivity increases, resp. decreases over-exponential. From Arrhenius plots activation energy (E a ) and conductivity pre-factor (σ 0 ) were calculated for a large number of samples with different composition. A correlation between E a and σ 0 was found giving a Meyer-Neldel relation with a slope of 59 mV, corresponding to a material characteristic temperature T m = 400 deg. C, and an intercept at σ 00 = 0.1 Ω -1 cm -1

  1. Contrast of HOLZ lines in energy-filtered convergent-beam electron diffraction patterns from silicon

    International Nuclear Information System (INIS)

    Lehmpfuhl, G.; Krahl, D.; Uchida, Y.

    1995-01-01

    Higher-order Laue-zone (HOLZ) lines were investigated in convergent-beam electron diffraction patterns from silicon near the low-indexed zone axes [100], [110] and [111]. The visibility of these lines depends on the effective structure potentials of the reflections from the first Laue zone depending on their Debye-Waller factor. The contrast of the HOLZ lines is strongly reduced by inelastically scattered electrons. They can be excluded by an imaging Ω filter for energy losses above 2 eV. The diffraction patterns were compared with many-beam calculations. Without absorption, an excellent agreement could be achieved for the [111] and [100] zone axes, while the simulation of the [110] zone-axis pattern needed a calculation with absorption. The reason for this observation is explained in the Bloch-wave picture. Calculations with absorption, however, lead to artefacts in the intensity distribution of the [100] HOLZ pattern. In order to obtain agreement with the experiment, the Debye-Waller factor had to be modified in different ways for the different zone axes. This corresponds to a strong anisotropy of the Debye-Waller factor. To confirm this observation, the temperature dependence of the itensity distributions of the HOLZ patterns was investigated between 50 and 680 K. At room temperature, the parameter D in the Debye-Waller factor exp(-Ds 2 ) was determined as 0.13, 0.26 and 0.55 A 2 for the zone axes [100], [111] and [110], respectively. The reliability of the conclusions is discussed. (orig.)

  2. An accelerated stress testing program for determining the reliability sensitivity of silicon solar cells to encapsulation and metallization systems

    Science.gov (United States)

    Lathrop, J. W.; Davis, C. W.; Royal, E.

    1982-01-01

    The use of accelerated testing methods in a program to determine the reliability attributes of terrestrial silicon solar cells is discussed. Different failure modes are to be expected when cells with and without encapsulation are subjected to accelerated testing and separate test schedules for each are described. Unencapsulated test cells having slight variations in metallization are used to illustrate how accelerated testing can highlight different diffusion related failure mechanisms. The usefulness of accelerated testing when applied to encapsulated cells is illustrated by results showing that moisture related degradation may be many times worse with some forms of encapsulation than with no encapsulation at all.

  3. Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

    Science.gov (United States)

    Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

    1996-09-01

    A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

  4. Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

    Directory of Open Access Journals (Sweden)

    Vladimir A. Terekhov

    2015-09-01

    Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

  5. Construction process and read-out electronics of amorphous silicon position detectors for multipoint alignment monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, C.; Schubert, M.B.; Lutz, B.; Werner, J.H. [Steinbeis-Transferzentrum fuer Angewandte Photovoltaik und Duennschichttechnik, Stuttgart (Germany); Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E. [CIEMAT, Madrid (Spain); Ferrando, A. [CIEMAT, Madrid (Spain)], E-mail: antonio.ferrando@ciemat.es; Josa, M.I.; Molinero, A.; Navarrete, J.; Oller, J.C.; Yuste, C. [CIEMAT, Madrid (Spain); Calderon, A.; Fernandez, M.G.; Gomez, G.; Gonzalez-Sanchez, F.J.; Martinez-Rivero, C.; Matorras, F. [Instituto de Fisica de Cantabria IFCA/CSIC-University of Cantabria, Santander (Spain)] (and others)

    2009-09-01

    We describe the construction process of large-area high-performance transparent amorphous silicon position detecting sensors. Details about the characteristics of the associated local electronic board (LEB), specially designed for these sensors, are given. In addition we report on the performance of a multipoint alignment monitoring application of 12 sensors in a 13 m long light path.

  6. Learning nitrogen-vacancy electron spin dynamics on a silicon quantum photonic simulator

    NARCIS (Netherlands)

    Wang, J.; Paesani, S.; Santagati, R.; Knauer, S.; Gentile, A. A.; Wiebe, N.; Petruzzella, M.; Laing, A.; Rarity, J. G.; O'Brien, J. L.; Thompson, M. G.

    2017-01-01

    We present the experimental demonstration of quantum Hamiltonian learning. Using an integrated silicon-photonics quantum simulator with the classical machine learning technique, we successfully learn the Hamiltonian dynamics of a diamond nitrogen-vacancy center's electron ground-state spin.

  7. Recent results from the development of silicon detectors with integrated electronics

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Betta, G.-F. E-mail: dallabe@dit.unitn.it; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N

    2004-02-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization.

  8. Recent results from the development of silicon detectors with integrated electronics

    International Nuclear Information System (INIS)

    Dalla Betta, G.-F.; Boscardin, M.; Batignani, G.; Bettarini, S.; Bisogni, M.G.; Bosisio, L.; Carpinelli, M.; Ciacchi, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Manghisoni, M.; Novelli, M.; Piemonte, C.; Rachevskaia, I.; Rama, M.; Ratti, L.; Re, V.; Ronchin, S.; Sandrelli, F.; Simi, G.; Speziali, V.; Rosso, V.; Traversi, G.; Zorzi, N.

    2004-01-01

    In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization

  9. Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

    DEFF Research Database (Denmark)

    Strobel, S.; Albert, E.; Csaba, G.

    2009-01-01

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI s...

  10. Growth and intercalation of graphene on silicon carbide studied by low-energy electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Speck, Florian; Ostler, Markus; Wanke, Martina; Seyller, Thomas [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Technische Universitaet Chemnitz, Institut fuer Physik (Germany); Besendoerfer, Sven [Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Technische Physik, Erlangen (Germany); Krone, Julia [Technische Universitaet Chemnitz, Institut fuer Physik (Germany)

    2017-11-15

    Based on its electronic, structural, chemical, and mechanical properties, many potential applications have been proposed for graphene. In order to realize these visions, graphene has to be synthesized, grown, or exfoliated with properties that are determined by the targeted application. Growth of so-called epitaxial graphene on silicon carbide by sublimation of silicon in an argon atmosphere is one particular method that could potentially lead to electronic applications. In this contribution we summarize our recent work on different aspects of epitaxial graphene growth and interface manipulation by intercalation, which was performed by a combination of low-energy electron microscopy, low-energy electron diffraction, atomic force microscopy and photoelectron spectroscopy. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Ab initio structural and electronic properties of hydrogenated silicon nanoclusters in the ground and excited state

    International Nuclear Information System (INIS)

    Degoli, Elena; Bisi, O.; Ossicini, Stefano; Cantele, G.; Ninno, D.; Luppi, Eleonora; Magri, Rita

    2004-01-01

    Electronic and structural properties of small hydrogenated silicon nanoclusters as a function of dimension are calculated from ab initio technique. The effects induced by the creation of an electron-hole pair are discussed in detail, showing the strong interplay between the structural and optical properties of the system. The distortion induced on the structure after an electronic excitation of the cluster is analyzed together with the role of the symmetry constraint during the relaxation. We point out how the overall effect is that of significantly changing the electronic spectrum if no symmetry constraint is imposed to the system. Such distortion can account for the Stokes shift and provides a possible structural model to be linked to the four-level scheme invoked in the literature to explain recent results for the optical gain in silicon nanoclusters. Finally, formation energies for clusters with increasing dimension are calculated and their relative stability discussed

  12. Reliability

    OpenAIRE

    Condon, David; Revelle, William

    2017-01-01

    Separating the signal in a test from the irrelevant noise is a challenge for all measurement. Low test reliability limits test validity, attenuates important relationships, and can lead to regression artifacts. Multiple approaches to the assessment and improvement of reliability are discussed. The advantages and disadvantages of several different approaches to reliability are considered. Practical advice on how to assess reliability using open source software is provided.

  13. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  14. Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

    Science.gov (United States)

    Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

    2014-08-01

    Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

  15. The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

    OpenAIRE

    Prus, O.; Yaish, Y.; Reznikov, M.; Sivan, U.; Pudalov, V.

    2002-01-01

    A novel method invented to measure the minute thermodynamic spin magnetization of dilute two dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility up to 7.5 folds compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the suscep...

  16. Tunable electronic properties of silicon nanowires under strain and electric bias

    Directory of Open Access Journals (Sweden)

    Alexis Nduwimana

    2014-07-01

    Full Text Available The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

  17. Quenching mechanisms of porous silicon photoluminescence with an electron beam at different intensity

    CERN Document Server

    Kostishko, B M

    2001-01-01

    The effect of the particles flux density by the electron irradiation of the porous silicon on the kinetics of the surface complexes desorption and correspondingly on the photoluminescence quenching degree is studied. It is shown, that by the electron beam density above 5.5 x 10 sup 1 sup 3 cm sup - sup 2 s sup - sup 1 there occurs the surface charging and decrease in its adsorption ability relative to the donor molecular groups

  18. Overview of humidity driven reliability issues of electronics

    DEFF Research Database (Denmark)

    Ambat, Rajan

    2017-01-01

    Electronic control units, power modules, and consumer electronics are used today in a wide variety of varying climatic conditions. Varying external climatic conditions of temperature and humidity can cause an uncontrolled local climate inside the device enclosure. Uncontrolled humidity together w...

  19. Carbon Electrode-Molecule Junctions: A Reliable Platform for Molecular Electronics.

    Science.gov (United States)

    Jia, Chuancheng; Ma, Bangjun; Xin, Na; Guo, Xuefeng

    2015-09-15

    The development of reliable approaches to integrate individual or a small collection of molecules into electrical nanocircuits, often termed "molecular electronics", is currently a research focus because it can not only overcome the increasing difficulties and fundamental limitations of miniaturization of current silicon-based electronic devices, but can also enable us to probe and understand the intrinsic properties of materials at the atomic- and/or molecular-length scale. This development might also lead to direct observation of novel effects and fundamental discovery of physical phenomena that are not accessible by traditional materials or approaches. Therefore, researchers from a variety of backgrounds have been devoting great effort to this objective, which has started to move beyond simple descriptions of charge transport and branch out in different directions, reflecting the interdisciplinarity. This Account exemplifies our ongoing interest and great effort in developing efficient lithographic methodologies capable of creating molecular electronic devices through the combination of top-down micro/nanofabrication with bottom-up molecular assembly. These devices use nanogapped carbon nanomaterials (such as single-walled carbon nanotubes (SWCNTs) and graphene), with a particular focus on graphene, as point contacts formed by electron beam lithography and precise oxygen plasma etching. Through robust amide linkages, functional molecular bridges terminated with diamine moieties are covalently wired into the carboxylic acid-functionalized nanogaps to form stable carbon electrode-molecule junctions with desired functionalities. At the macroscopic level, to improve the contact interface between electrodes and organic semiconductors and lower Schottky barriers, we used SWCNTs and graphene as efficient electrodes to explore the intrinsic properties of organic thin films, and then build functional high-performance organic nanotransistors with ultrahigh responsivities

  20. Parallel and pipelined front-end for multi-element silicon detectors in scanning electron microscopy

    International Nuclear Information System (INIS)

    Boulin, C.; Epstein, A.

    1992-01-01

    This paper discusses a silicon quadrant detector (128 elements) implemented as an electron detector in a Scanning Transmission Electron Microscope. As the electron beam scans over the sample, electrons are counted during each pixel. The authors developed an ASIC for the multichannel counting system. The digital front-end carries out the readout of all elements, in four groups, and uses these data to compute linear combinations to generate up to eight simultaneous images. For the preprocessing the authors implemented a parallel and pipelined system. Dedicated software tools were developed to generate the programs for all the processors. These tools are transparently accessed by the user via a user friendly interface

  1. Studies of dynamics of electron clouds in STAR silicon drift detectors

    CERN Document Server

    Bellwied, R; Brandon, N; Caines, H; Chen, W; Dimassimo, D; Dyke, H; Hall, J R; Hardtke, D; Hoffmann, G W; Humanic, T J; Kotova, A I; Kotov, I V; Kraner, H W; Li, Z; Lynn, D; Middelkamp, P; Ott, G; Pandey, S U; Pruneau, C A; Rykov, V L; Schambach, J; Sedlmeir, J; Sugarbaker, E R; Takahashi, J; Wilson, W K

    2000-01-01

    The dynamics of electrons generated in silicon drift detectors was studied using an IR LED. Electrons were generated at different drift distances. In this way, the evolution of the cloud as a function of drift time was measured. Two methods were used to measure the cloud size. The method of cumulative functions was used to extract the electron cloud profiles. Another method obtains the cloud width from measurements of the charge collected on a single anode as a function of coordinate of the light spot. The evolution of the electron cloud width with drift time is compared with theoretical calculations. Experimental results agreed with theoretical expectations.

  2. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  3. Conversion electron spectrometry of Pu isotopes with a silicon drift detector

    OpenAIRE

    Pommé, S.; Paepen, J.; Peräjärvi, K.; Turunen, J.; Pöllänen, R.

    2016-01-01

    An electron spectrometry set-up was built at IRMM consisting of a vacuum chamber with a moveable source holder and windowless Peltier-cooled silicon drift detector (SDD). The SDD is well suited for measuring low-energy x rays and electrons emitted from thin radioactive sources with low self-absorption. The attainable energy resolution is better than 0.5 keV for electrons of 30 keV. It has been used to measure the conversion electron spectra of three plutonium isotopes, i.e. 238Pu, 239Pu, 240P...

  4. γ-irradiation effect on electronic properties in hydrogenated amorphous silicon

    International Nuclear Information System (INIS)

    Shirafuji, J.; Nagata, S.; Shirakawa, K.

    1986-01-01

    γ-irradiation effect on electron transport and photoelectric properties in glow-discharge hydrogenated amorphous silicon is investigated mainly by means of time-of-flight measurement. Although the electron transport changes from non-dispersive to dispersive when the total dose on γ-rays is increased, the electron mobility at room temperature is affected only slightly by γ-irradiation. The γ-irradiation introduces dominantly Si dangling bonds, allowing to study the recombination characteristic as a function of dangling bond density under controllable conditions. It is found that the electron recombination lifetime is inversely proportional to the dangling bond density. (author)

  5. Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

    Science.gov (United States)

    Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

    2016-03-01

    Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

  6. The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

    International Nuclear Information System (INIS)

    Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

    1994-01-01

    The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

  7. Extreme Environment Electronics based on Silicon Carbide, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long...

  8. Extreme Environment Electronics based on Silicon Carbide, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Radiation tolerant, extreme temperature capable electronics are needed for a variety of planned NASA missions. For example, in-situ exploration of Venus and long...

  9. Effects of phosphorus, silicon and sulphur on microstructural evolution in austenitic stainless steels during electron irradiation

    International Nuclear Information System (INIS)

    Fukuya, K.; Nakahigashi, S.; Ozaki, S.; Shima, S.

    1991-01-01

    Fe-18Cr-9Ni-1,5Mn austenitic alloys containing phosphorus, silicon and sulphur were irradiated by 1 MeV electrons at 573-773 K. Phosphorus increased the interstitial loop nucleation and decreased the void swelling by increasing void number density and suppressing void growth. Silicon had a similar effect to phosphorus but its effect was weaker than phosphorus. Sulphur enhanced void swelling through increasing the void density. Nickel enrichment at grain boundaries was suppressed only in the alloy containing phosphorus. These phosphorus effects may be explained by a strong interaction with interstitials resulting in a high density of sinks for point defects. (orig.)

  10. Laser annealed HWCVD and PECVD thin silicon films. Electron field emission

    International Nuclear Information System (INIS)

    O'Neill, K.A.; Shaikh, M.Z.; Lyttle, G.; Anthony, S.; Fan, Y.C.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Electron Field Emission (FE) properties of various laser annealed thin silicon films on different substrates were investigated. HWCVD microcrystalline and PECVD amorphous silicon films were irradiated with Nd : YAG and XeCl Excimer lasers at varying energy densities. Encouraging FE results were mainly from XeCl Excimer laser processed PECVD and HWCVD films on metal backplanes. FE measurements were complemented by the study of film surface morphology. Geometric field enhancement factors from surface measurements and Fowler-Nordheim Theory (FNT) were compared. FE properties of the films were also found to be particularly influenced by the backplane material

  11. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Somayeh, E-mail: somayeh.behzad@gmail.co [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Moradian, Rostam [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of); Nano Science and Technology Research Center, Razi University, Kermanshah (Iran, Islamic Republic of); Computational Physical Science Research Laboratory, Department of Nano Science, Institute for Studies in Theoretical Physics and Mathematics (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of); Chegel, Raad [Physics Department, Faculty of Science, Razi University, Kermanshah (Iran, Islamic Republic of)

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  12. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-01-01

    The effects of boron doping on the structural and electronic properties of (6,0)-(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  13. Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

    Science.gov (United States)

    Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

    2010-12-01

    The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

  14. Use of an amorphous silicon electronic portal imaging device for multileaf collimator quality control and calibration

    International Nuclear Information System (INIS)

    Baker, S J K; Budgell, G J; MacKay, R I

    2005-01-01

    Multileaf collimator (MLC) calibration and quality control is a time-consuming procedure typically involving the processing, scanning and analysis of films to measure leaf and collimator positions. Faster and more reliable calibration procedures are required for these tasks, especially with the introduction of intensity modulated radiotherapy which requires more frequent checking and finer positional leaf tolerances than previously. A routine quality control (QC) technique to measure MLC leaf bank gain and offset, as well as minor offsets (individual leaf position relative to a reference leaf), using an amorphous silicon electronic portal imaging device (EPID) has been developed. The technique also tests the calibration of the primary and back-up collimators. A detailed comparison between film and EPID measurements has been performed for six linear accelerators (linacs) equipped with MLC and amorphous silicon EPIDs. Measurements of field size from 4 to 24 cm with the EPID were systematically smaller than film measurements over all field sizes by 0.4 mm for leaves/back-up collimators and by 0.2 mm for conventional collimators. This effect is due to the gain calibration correction applied by the EPID, resulting in a 'flattening' of primary beam profiles. Linac dependent systematic differences of up to 0.5 mm in individual leaf/collimator positions were also found between EPID and film measurements due to the difference between the mechanical and radiation axes of rotation. When corrections for these systematic differences were applied, the residual random differences between EPID and film were 0.23 mm and 0.26 mm (1 standard deviation) for field size and individual leaf/back-up collimator position, respectively. Measured gains (over a distance of 220 mm) always agreed within 0.4 mm with a standard deviation of 0.17 mm. Minor offset measurements gave a mean agreement between EPID and film of 0.01 ± 0.10 mm (1 standard deviation) after correction for the tilt of the

  15. Reliability considerations of electronics components for the deep underwater muon and neutrino detection system

    International Nuclear Information System (INIS)

    Leskovar, B.

    1980-02-01

    The reliability of some electronics components for the Deep Underwater Muon and Neutrino Detection (DUMAND) System is discussed. An introductory overview of engineering concepts and technique for reliability assessment is given. Component reliability is discussed in the contest of major factors causing failures, particularly with respect to physical and chemical causes, process technology and testing, and screening procedures. Failure rates are presented for discrete devices and for integrated circuits as well as for basic electronics components. Furthermore, the military reliability specifications and standards for semiconductor devices are reviewed

  16. Reliability and corrosion induced degradation of electronic system

    International Nuclear Information System (INIS)

    Tapas, V.K.; Varde, P.V.

    2014-01-01

    This paper describe the corrosion induced degradation of electronic system failures due to environmental conditions such as humidity, temperature, ionic or organic contaminants, residuals; etc. which can accelerates as electrochemical reaction and causes corrosion of electronic components, Corrosive gases and water vapours from humid condition come into contact with the base metal results in buildup of various chemical reaction products. Ionic contamination responsible for electrochemical reaction, forms soluble complexes with metals, it can degrade the protective oxide film that forms on the positively biased metallization and/or lead to change in the local pH. Deterioration of metal components or electronic circuitry due to electrochemical migration needs to be controlled in order to reduce the corrosion. With explosive increase in demand and miniaturization in electronic system resulted in smaller components, closer spacing and thinner metallic path, it is expected that the corrosion and deterioration of electronic components may become cause or concern. This paper summarises the current understanding of chemistry behind possible causes of corrosion of electronic devices and its failure mechanism. (author)

  17. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    Hydrogenated microcrystalline silicon oxide (μc-SiOx:H) layers are one alternative approach to ensure sufficient interlayer charge transport while maintaining high transparency and good passivation in Si-based solar cells. We have used a combination of complementary x-ray and electron spectroscopies to study the chemical and electronic structure of the (μc-SiOx:H) material system. With these techniques, we monitor the transition from a purely Si-based crystalline bonding network to a silicon oxide dominated environment, coinciding with a significant decrease of the material's conductivity. Most Si-based solar cell structures contain emitter/contact/passivation layers. Ideally, these layers fulfill their desired task (i.e., induce a sufficiently high internal electric field, ensure a good electric contact, and passivate the interfaces of the absorber) without absorbing light. Usually this leads to a trade-off in which a higher transparency can only be realized at the expense of the layer's ability to properly fulfill its task. One alternative approach is to use hydrogenated microcrystalline silicon oxide (μc-SiOx:H), a mixture of microcrystalline silicon and amorphous silicon (sub)oxide. The crystalline Si regions allow charge transport, while the oxide matrix maintains a high transparency. To date, it is still unclear how in detail the oxygen content influences the electronic structure of the μc-SiOx:H mixed phase material. To address this question, we have studied the chemical and electronic structure of the μc-SiOx:H (0 0.5, we observe a pronounced decrease of Si 3s - Si 3p hybridization in favor of Si 3p - O 2p hybridization in the upper valence band. This coincides with a significant increase of the material's resistivity, possibly indicating the breakdown of the conducting crystalline Si network. Silicon oxide layers with a thickness of several hundred nanometres were deposited in a PECVD (plasma-enhanced chemical vapor deposition) multi chamber system

  18. Technology for the compatible integration of silicon detectors with readout electronics

    International Nuclear Information System (INIS)

    Zimmer, G.

    1984-01-01

    Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

  19. Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon

    Science.gov (United States)

    Luhman, D. R.; Nguyen, K.; Tracy, L. A.; Carr, S. M.; Borchardt, J.; Bishop, N. C.; Ten Eyck, G. A.; Pluym, T.; Wendt, J.; Carroll, M. S.; Lilly, M. P.

    2014-03-01

    The spin of an electron bound to a single donor implanted in silicon is potentially useful for quantum information processing. We report on our efforts to measure and manipulate the spin of an electron bound to a single P donor in silicon. A low number of P donors are implanted using a self-aligned process into a silicon substrate in close proximity to a single-electron-transistor (SET) defined by lithographically patterned polysilicon gates. The SET is used to sense the occupancy of the electron on the donor and for spin read-out. An adjacent transmission line allows the application of microwave pulses to rotate the spin of the electron. We will present data from various experiments designed to exploit these capabilities. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  20. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon

    Science.gov (United States)

    Tracy, Lisa; Luhman, Dwight; Carr, Stephen; Borchardt, John; Bishop, Nathaniel; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Witzel, Wayne; Blume-Kohout, Robin; Nielsen, Erik; Lilly, Michael; Carroll, Malcolm

    In this talk we will discuss electron spin resonance experiments in single donor silicon qubit devices fabricated at Sandia National Labs. A self-aligned device structure consisting of a polysilicon gate SET located adjacent to the donor is used for donor electron spin readout. Using a cryogenic HEMT amplifier next to the silicon device, we demonstrate spin readout at 100 kHz bandwidth and Rabi oscillations with 0.96 visibility. Electron spin resonance measurements on these devices show a linewidth of 30 kHz and coherence times T2* = 10 us and T2 = 0.3 ms. We also discuss estimates of the fidelity of our donor electron spin qubit measurements using gate set tomography. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon.

  1. Analysis of borophosphosilicate glass layers on silicon wafers by X-ray emission from photon and electron excitation

    International Nuclear Information System (INIS)

    Elgersma, O.; Borstrok, J.J.M.

    1989-01-01

    Phosphorus and oxygen concentrations in the homogeneous layer of borosilicate glass (BPSG) deposited on Si-integrated circuits are determined by X-ray fluorescence from photon excitation. The X-ray emission from electron excitation in an open X-ray tube instrument yields a sufficiently precise determination of the boron content. The thickness of the layer can be derived from silicon Kα-fluorescence. A calibration model is proposed for photon as well as for electron excitation. The experimentally determined parameters in this model well agree with those derived from fundamental parameters for X-ray absorption and emission. The chemical surrounding of silicon affects strongly the peak profile of the silicon Kβ-emission. This enables to distinguish emission from the silicon atoms in the wafer and from the silicon atoms in the silicon oxide complexes of the BPSG-layer. (author)

  2. Electronic structure of divacancy-hydrogen complexes in silicon

    International Nuclear Information System (INIS)

    Coutinho, J; Torres, V J B; Jones, R; Oeberg, S; Briddon, P R

    2003-01-01

    Divacancy-hydrogen complexes (V 2 H and V 2 H 2 ) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V 2 H 2 is an acceptor, whereas V 2 H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments

  3. Evaluation on electrical resistivity of silicon materials after electron ...

    Indian Academy of Sciences (India)

    Administrator

    3Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, ... 1 m3, an electron beam gun with an accelerating voltage of 30 kV ... interface formed in figure 1b–e, which is not exactly at.

  4. Electron mobility enhancement in (100) oxygen-inserted silicon channel

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Nuo; King Liu, Tsu-Jae [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Takeuchi, Hideki; Hytha, Marek; Cody, Nyles W.; Stephenson, Robert J.; Mears, Robert J. [Mears Technologies, Inc., Wellesley Hills, Massachusetts 02481 (United States); Kwak, Byungil; Cha, Seon Yong [SK Hynix, Icheon-si, Gyeonggi-do 467-701 (Korea, Republic of)

    2015-09-21

    High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.

  5. Silicon passivation study under low energy electron irradiation conditions

    International Nuclear Information System (INIS)

    Cluzel, R.

    2010-01-01

    Backside illuminated thinned CMOS (Complementary Metal Oxide Semiconductor) imaging system is a technology developed to increase the signal to noise ratio and the sensibility of such sensors. This configuration is adapted to the electrons detection from the energy range of [1 - 12 keV]. The impinging electron creates by multiplication several hundreds of secondary electrons close to the surface. A P ++ highly-doped passivation layer of the rear face is required to reduce the secondary electron surface recombination rate. Thanks to the potential barrier induced by the P ++ layer, the passivation layer increases the collected charges number and so the sensor collection gain. The goal of this study is to develop some experimental methods in order to determine the effect of six different passivation processes on the collection gain. Beforehand, the energy profile deposited by an incident electron is studied with the combination of Monte-Carlo simulations and some analytical calculations. The final collection gain model shows that the mirror effect from the passivation layer is a key factor at high energies whereas the passivation layer has to be as thin as possible at low energies. A first experimental setup which consists in irradiating P ++ /N large diodes allows to study the passivation process impacts on the surface recombinations. Thanks to a second setup based on a single event upset directly on thinned CMOS sensor, passivation techniques are discriminated in term of mirror effect and the implied spreading charges. The doping atoms activation laser annealing is turn out to be a multiplication gain inhomogeneity source impacting directly the matrix uniformity. (author)

  6. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells

    KAUST Repository

    Yang, Xinbo

    2018-04-19

    Minimizing carrier recombination at contact regions by using carrier‐selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high‐efficiency, low‐cost crystalline silicon (c‐Si) solar cells. A novel electron‐selective, passivating contact for c‐Si solar cells is presented. Tantalum nitride (TaN x ) thin films deposited by atomic layer deposition are demonstrated to provide excellent electron‐transporting and hole‐blocking properties to the silicon surface, due to their small conduction band offset and large valence band offset. Thin TaNx interlayers provide moderate passivation of the silicon surfaces while simultaneously allowing a low contact resistivity to n‐type silicon. A power conversion efficiency (PCE) of over 20% is demonstrated with c‐Si solar cells featuring a simple full‐area electron‐selective TaNx contact, which significantly improves the fill factor and the open circuit voltage (Voc) and hence provides the higher PCE. The work opens up the possibility of using metal nitrides, instead of metal oxides, as carrier‐selective contacts or electron transport layers for photovoltaic devices.

  7. Reliable protection of electronics against lightning: some practical applications

    NARCIS (Netherlands)

    Laan, van der P.C.T.; Deursen, van A.P.J.

    1998-01-01

    The classical lightning conductor, which must prevent fire, has to have a sufficiently small resistance. An analogous condition can be formulated for the new challenge: the protection of sensitive electronics against lightning. In this case, the so-called transfer impedance, which gives the

  8. Electronic spectrum of a deterministic single-donor device in silicon

    International Nuclear Information System (INIS)

    Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2013-01-01

    We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants

  9. Use of a silicon surface-barrier detector for measurement of high-energy end loss electrons in a tandem mirror

    International Nuclear Information System (INIS)

    Saito, T.; Kiwamoto, Y.; Honda, T.; Kasugai, A.; Kurihara, K.; Miyoshi, S.

    1991-01-01

    An apparatus for the measurement of high-energy electrons (10--500 keV) with a silicon surface-barrier detector is described. The apparatus has special features. In particular, a fast CAMAC transient digitizer is used to directly record the wave form of a pulse train from the detector and then pulse heights are analyzed with a computer instead of on a conventional pulse height analyzer. With this method the system is capable of detecting electrons with a count rate as high as ∼300--400 kilocounts/s without serious deterioration of performance. Moreover, piled up signals are reliably eliminated from analysis. The system has been applied to measure electron-cyclotron-resonance-heating-induced end loss electrons in the GAMMA 10 tandem mirror and has yielded information relating to electron heating and diffusion in velocity space

  10. Structural and electronic properties of hydrosilylated silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baumer, A.

    2005-11-15

    The structural and electronic properties of alkyl-terminated Si surfaces prepared by thermallyinduced hydrosilylation have been studied in detail in the preceding chapters. Various surfaces have been used for the functionalization ranging from crystalline Si over amorphous hydrogenated Si to nanoscaled materials such as Si nanowires and nanoparticles. In each case, the alkyl-terminated surfaces have been compared to the native oxidized and H-terminated surfaces. (orig.)

  11. Efficiency evaluation of an electronic equipment: availability,reliability and maintenance

    International Nuclear Information System (INIS)

    Guyot, C.

    1966-01-01

    This concept of efficiency often called ''system effectiveness'', is presented and analyzed in terms of reliability and maintenance. It allows to define the availability factor of an electronic equipment. A procedure of evaluation is proposed. (A.L.B.)

  12. Reliability data bank in electronics: ITALTEL experience over 10 years of operation

    International Nuclear Information System (INIS)

    Turconi, G.

    1986-01-01

    The purpose of this paper is to show the Italtel Reliability Data Bank experience in electronics after ten years from data bank creation. Technological evolution on systems and equipment have originated a reliability data bank evolution in order to maintain and improve its performances. This paper will describe the concepts employed to design the today data bank features enabling it to be an important Company tool for reliability activities. (orig.)

  13. Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

    Science.gov (United States)

    Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

    2011-01-01

    The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

  14. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  15. Reliability prediction system based on the failure rate model for electronic components

    International Nuclear Information System (INIS)

    Lee, Seung Woo; Lee, Hwa Ki

    2008-01-01

    Although many methodologies for predicting the reliability of electronic components have been developed, their reliability might be subjective according to a particular set of circumstances, and therefore it is not easy to quantify their reliability. Among the reliability prediction methods are the statistical analysis based method, the similarity analysis method based on an external failure rate database, and the method based on the physics-of-failure model. In this study, we developed a system by which the reliability of electronic components can be predicted by creating a system for the statistical analysis method of predicting reliability most easily. The failure rate models that were applied are MILHDBK- 217F N2, PRISM, and Telcordia (Bellcore), and these were compared with the general purpose system in order to validate the effectiveness of the developed system. Being able to predict the reliability of electronic components from the stage of design, the system that we have developed is expected to contribute to enhancing the reliability of electronic components

  16. Investigation of a combined platinum and electron lifetime control treatment for silicon

    International Nuclear Information System (INIS)

    Jia, Yunpeng; Cui, Zhihang; Yang, Fei; Zhao, Bao; Zou, Shikai; Liang, Yongsheng

    2017-01-01

    In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (I rr ) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, I rr of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec −0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec −0.476 eV), which is caused by electron irradiation directly and results in I rr ’s increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device’s characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

  17. Investigation of a combined platinum and electron lifetime control treatment for silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Yunpeng [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Cui, Zhihang, E-mail: czhczh321321@126.com [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China); Yang, Fei [State Grid Smart Electrical Engineering, Beijing 100192 (China); Zhao, Bao; Zou, Shikai; Liang, Yongsheng [College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124 (China)

    2017-02-01

    In silicon, the effect of Combined Lifetime Treatment (CLT) involving platinum diffusion and subsequent electron irradiation is different from the separate treatments of platinum diffusion and electron irradiation, even the treatment of electron irradiation followed by platinum diffusion. In this paper, we investigated the experimental behavior of different kinds of lifetime treated samples. We found that the reverse leakage current (I{sub rr}) increases with the increasing platinum diffusion temperature or electron irradiation dose in the separate treatments. Conversely, I{sub rr} of the CLT samples decreased with rising platinum diffusion temperature at the same dose of subsequent electron irradiation. By deep-level transient spectroscopy (DLTS), a new energy level E7 (Ec −0.376 eV) was found in our CLT samples. The new level E7 suppresses the dominance of the deeper level E8 (Ec −0.476 eV), which is caused by electron irradiation directly and results in I{sub rr}’s increase. The formation of the level E7 comes from the complex defect-combined effect between platinum atoms and silicon vacancies, and it affects device’s characteristics finally. These research will be helpful to the development of platinum-diffused devices used in intense electron irradiation environments.

  18. Soft component of channeled electron radiation in silicon crystals

    International Nuclear Information System (INIS)

    Vnukov, I.E.; Kalinin, B.N.; Kiryakov, A.A.; Naumenko, G.A.; Padalko, D.V.; Potylitsyn, A.P.

    2001-01-01

    Radiation spectrum and orientation dependences of photon yield with the energy much lower than characteristic radiation energy during channeling were measured using a crystal-diffraction spectrometer. For electron drop along axis radiation intensity in the spectral range 30 ≤ ω ≤ 360 keV exceeds by nearly an order the intensity of Bremsstrahlung. The shape of radiation spectrum does not coincide with Bremsstrahlung spectrum. Radiation intensity increases gradually with photons energy growth. Bremsstrahlung spectrum from a disoriented crystalline target is described in a satisfactory manner by the currently used theory with phenomenological account of the medium polarization [ru

  19. The design and investigation of hybrid ferromagnetic/silicon spin electronic devices

    International Nuclear Information System (INIS)

    Pugh, D.I.

    2001-01-01

    The focus of this study concerns the design and investigation of ferromagnetic/silicon hybrid spin electronic devices as part of a wider project to design a novel spin valve transistor. The key issue to obtain a room temperature spin electronic device is the electrical injection of a spin polarised current from a ferromagnetic contact into a semiconductor. Despite many attempts concentrating on GaAs and InAs only small (< 1%) effects have been observed, making it difficult to confirm spin injection. Lateral devices were designed and fabricated using standard device fabrication procedures to produce arrays of Co/Si/So junctions. Subsequent designs aimed to reduce the number of junctions and improve device isolation. Evidence for spin dependent MR of up to 0.56% was observed in Co/p-Si/Co junctions with silicon gaps up to 16 μm in length. The maximum MR was observed when the first Co/Si Schottky barrier was reverse biased forming a high resistance interface. Vertical devices were designed in an attempt to eliminate any alternative current paths by using a well defined, 1 μm thick silicon membrane. Despite attempts to include oxide barriers, no spin dependent MR was observed in these devices. However, a novel vertical silicon based design has been made which should facilitate further advanced studies of spin injection and transport. The spin diffusion length in n-type silicon has been calculated as a function of doping concentration and temperature by considering the spin relaxation mechanisms in the semiconductor. Discussion has been made concerning p-type silicon and comparisons made with GaAs, indicating that n-Si should show longer spin diffusion lengths. The key design criteria for designing room temperature spin electronic devices have been highlighted. These include the use of a high leakage Schottky barrier or tunnel barrier between the ferromagnet and p-Si and a contact to the silicon to enable appropriate biasing to each FM/Si interface. (author)

  20. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  1. Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

    International Nuclear Information System (INIS)

    Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

    2005-01-01

    A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

  2. Transmission electron microscope study of neutron irradiation-induced defects in silicon

    International Nuclear Information System (INIS)

    Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

    1994-01-01

    Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

  3. Considerations on the design of front-end electronics for silicon calorimetry for the SSC

    International Nuclear Information System (INIS)

    Wintenberg, A.L.; Bauer, M.L.; Britton, C.L.; Kennedy, E.J.; Todd, R.A.; Berridge, S.C.; Bugg, W.M.

    1990-01-01

    Some considerations are described for the design of a silicon-based sampling calorimetry detector for the Superconducting Super Collider (SSC). The use of silicon as the detection medium allows fast, accurate, and fine-grained energy measurements - but for optimal performance, the front-end electronics must be matched to the detector characteristics and have the speed required by the high SSC interaction rates. The relation between the signal-to-noise rtio of the calorimeter electronics and the charge collection time, the preamplifier power dissipation, detector capacitance and leakage, charge gain, and signal shaping and sampling was studied. The electrostatic transformer connection was analyzed and found to be unusable for a tightly arranged calorimeter because of stray capacitance effects. The method of deconvolutional sampling was developed as a means for pileup correction following synchronous sampling and analog storage

  4. Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

    Science.gov (United States)

    Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

    2018-04-01

    In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

  5. Electron beam irradiation after reconstruction with silicone gel implant in breast cancer

    International Nuclear Information System (INIS)

    Krishnan, L.; Krishnan, E.C.

    1986-01-01

    Irradiation for breast cancer in the presence of a silicone gel breast prosthesis is sometimes necessary. There is a concern among radiation and other oncologists as to whether the presence of the prosthetic implant would interfere with delivery of the needed irradiation doses. Electron beams, with their finite penetration and rapid fall-off, offer a mode of adequately treating the recurrence and minimizing the radiation to the underlying normal structures, such as the lung and the heart. The dose distribution using 9-20 MeV electrons in the presence of a breast prosthesis is compared to the dose distribution without the implant in a tissue equivalent water phantom. The results reveal no significant difference in the dose delivered due to the presence of the prosthesis. Clinical verification of the dosimetry in the presence of the prosthesis confirmed that the presence of the silicone gel implant does not compromise treatment by irradiation in the management of breast cancer

  6. Off-axis electron holography for the measurement of active dopants in silicon semiconductor devices

    International Nuclear Information System (INIS)

    Cooper, David

    2016-01-01

    There is a need in the semiconductor industry for a dopant profiling technique with nm-scale resolution. Here we demonstrate that off-axis electron holography can be used to provide maps of the electrostatic potential in semiconductor devices with nm-scale resolution. In this paper we will discuss issues regarding the spatial resolution and precision of the technique. Then we will discuss problems with specimen preparation and how this affects the accuracy of the measurements of the potentials. Finally we show results from experimental off-axis electron holography applied to nMOS and pMOS CMOS devices grown on bulk silicon and silicon- on-insulator type devices and present solutions to common problems that are encountered when examining these types of devices. (paper)

  7. Electrical and electron microscopy observations on defects in ion implanted silicon

    International Nuclear Information System (INIS)

    Ling, H.

    1978-01-01

    Silicon single crystals were implanted with 100 keV phosphorus ions to a dose of 2 x 10 16 ions/cm 2 at both room-temperature and 600 0 C. They were isochronally annealed at temperatures ranging from 400 0 C to 900 0 C. Sheet resistivity measurements of the specimens were taken after each anneal, together with corresponding transmission electron micrographs

  8. Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

    OpenAIRE

    Nishio, Kengo; Ozaki, Taisuke; Morishita, Tetsuya; Mikami, Masuhiro

    2010-01-01

    We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum ...

  9. The electronic structure of radial p-n junction silicon nanowires

    Science.gov (United States)

    Chiou, Shan-Haw; Grossman, Jeffrey

    2007-03-01

    Silicon nanowires with radial p-n junctions have recently been suggested for photovoltaic applications because incident light can be absorbed along the entire length of the wire, while photogenerated carriers only need to diffuse a maximum of one radius to reach the p-n junction. If the differential of the potential is larger than the binding energy of the electron-hole pair and has a range larger than the Bohr radius of electron-hole pair, then the charge separation mechanism will be similar to traditional silicon solar cells. However, in the small-diameter limit, where quantum confinement effects are prominent, both the exciton binding energy and the potential drop will increase, and the p-n junction itself may have a dramatically different character. We present ab initio calculations based on the generalized gradient approximation (GGA) of silicon nanowires with 2-3 nm diameter in the [111] growth direction. A radial p-n junction was formed by symmetrically doping boron and phosphorous at the same vertical level along the axis of the nanowire. The competition between the slope and character of the radial electronic potential and the exciton binding energy will presented in the context of a charge separation mechanism.

  10. Characterization of the Electronic Structure of Silicon Nanoparticles Using X-ray Absorption and Emission

    Energy Technology Data Exchange (ETDEWEB)

    Vaverka, April Susan Montoya [Univ.of California, Davis, CA (United States)

    2008-01-01

    Resolving open questions regarding transport in nanostructures can have a huge impact on a broad range of future technologies such as light harvesting for energy. Silicon has potential to be used in many of these applications. Understanding how the band edges of nanostructures move as a function of size, surface termination and assembly is of fundamental importance in understanding the transport properties of these materials. In this thesis work I have investigated the change in the electronic structure of silicon nanoparticle assemblies as the surface termination is changed. Nanoparticles are synthesized using a thermal evaporation technique and sizes are determined using atomic force microscopy (AFM). By passivating the particles with molecules containing alcohol groups we are able to modify the size dependent band edge shifts. Both the valence and conduction bands are measured using synchrotron based x-ray absorption spectroscopy (XAS) and soft x-ray fluorescence (SXF) techniques. Particles synthesized via recrystallization of amorphous silicon/SiO2 multilayers of thicknesses below 10 nm are also investigated using the synchrotron techniques. These samples also show quantum confinement effects but the electronic structure is different from those synthesized via evaporation methods. The total bandgap is determined for all samples measured. The origins of these differences in the electronic structures are discussed.

  11. Comparative study of the reliability of MPPT algorithms for the crystalline silicon photovoltaic modules in variable weather conditions

    Directory of Open Access Journals (Sweden)

    Abraham Dandoussou

    2017-05-01

    Full Text Available The crystalline silicon photovoltaic modules are widely used as power supply sources in the tropical areas where the weather conditions change abruptly. Fortunately, many MPPT algorithms are implemented to improve their performance. In the other hand, it is well known that these power supply sources are nonlinear dipoles and so, their intrinsic parameters may vary with the irradiance and the temperature. In this paper, the MPPT algorithms widely used, i.e. Perturb and Observe (P&O, Incremental Conductance (INC, Hill-Climbing (HC, are implemented using Matlab®/Simulink® model of a crystalline silicon photovoltaic module whose intrinsic parameters were extracted by fitting the I(V characteristic to experimental points. Comparing the simulation results, it is obvious that the variable step size INC algorithm has the best reliability than both HC and P&O algorithms for the near to real Simulink® model of photovoltaic modules. With a 60 Wp photovoltaic module, the daily maximum power reaches 50.76 W against 34.40 W when the photovoltaic parameters are fixed. Meanwhile, the daily average energy is 263 Wh/day against 195 Wh/day.

  12. Electron backscatter diffraction: Strategies for reliable data acquisition and processing

    International Nuclear Information System (INIS)

    Randle, Valerie

    2009-01-01

    In electron backscatter diffraction (EBSD) software packages there are many user choices both in data acquisition and in data processing and display. In order to extract maximum scientific value from an inquiry, it is helpful to have some guidelines for best practice in conducting an EBSD investigation. The purpose of this article therefore is to address selected topics of EBSD practice, in a tutorial manner. The topics covered are a brief summary on the principles of EBSD, specimen preparation, calibration of an EBSD system, experiment design, speed of data acquisition, data clean-up, microstructure characterisation (including grain size) and grain boundary characterisation. This list is not meant to cover exhaustively all areas where EBSD is used, but rather to provide a resource consisting of some useful strategies for novice EBSD users.

  13. Deactivation of group III acceptors in silicon during keV electron irradiation

    International Nuclear Information System (INIS)

    Sah, C.; Sun, J.Y.; Tzou, J.J.; Pan, S.C.

    1983-01-01

    Experimental results on p-Si metal-oxide-semiconductor capacitors (MOSC's) are presented which demonstrate the electrical deactivation of the acceptor dopant impurity during 8-keV electron irradiation not only in boron but also aluminum and indium-doped silicon. The deactivation rates of the acceptors during the 8-keV electron irradiation are nearly independent of the acceptor impurity type. The final density of the remaining active acceptor approaches nonzero values N/sub infinity/, with N/sub infinity/(B) Al--H>In-H. These deactivation results are consistent with our hydrogen bond model. The thermal annealing or regeneration rate of the deactivated acceptors in the MOSC's irradiated by 8-keV electron is much smaller than that in the MOSC's that have undergone avalanche electron injection, indicating that the keV electron irradiation gives rise to stronger hydrogen-acceptor bond

  14. Investigation of the generation of singlet oxygen in ensembles of photoexcited silicon nanocrystals by electron paramagnetic resonance spectroscopy

    International Nuclear Information System (INIS)

    Konstantinova, E. A.; Demin, V. A.; Timoshenko, V. Yu.

    2008-01-01

    The generation of singlet oxygen is investigated and its concentration upon photoexcitation of silicon nanocrystals in porous silicon layers is determined using electron paramagnetic resonance spectroscopy. The relaxation times of spin centers, i.e., silicon dangling bonds, in vacuum and in an oxygen atmosphere in the dark and under illumination of the samples are measured for the first time. It is revealed that the spin-lattice relaxation in porous silicon is retarded as compared to that in a single-crystal substrate. From analyzing experimental data, a microscopic model is proposed for interaction of oxygen molecules in the triplet state and spin centers at the surface of silicon nanocrystals. The results obtained have demonstrated that porous silicon holds promise for the use as a photosensitizer of molecular oxygen in biomedical applications

  15. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2017-01-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible

  16. The effect of introducing increased-reliability-risk electronic components into 3rd generation telecommunications systems

    International Nuclear Information System (INIS)

    Salmela, Olli

    2005-01-01

    In this paper, the dependability of 3rd generation telecommunications network systems is studied. Special attention is paid to a case where increased-reliability-risk electronic components are introduced to the system. The paper consists of three parts: First, the reliability data of four electronic components is considered. This includes statistical analysis of the reliability test data, thermo-mechanical finite element analysis of the printed wiring board structures, and based on those, a field reliability estimate of the components is constructed. Second, the component level reliability data is introduced into the network element reliability analysis. This is accomplished by using a reliability block diagram technique and Monte Carlo simulation of the network element. The end result of the second part is a reliability estimate of the network element with and without the high-risk component. Third, the whole 3rd generation network having multiple network elements is analyzed. In this part, the criticality of introducing high-risk electronic components into a 3rd generation telecommunications network is considered

  17. The effect of introducing increased-reliability-risk electronic components into 3rd generation telecommunications systems

    Energy Technology Data Exchange (ETDEWEB)

    Salmela, Olli [Nokia Networks, P.O. Box 301, 00045 Nokia Group (Finland)]. E-mail: olli.salmela@nokia.com

    2005-08-01

    In this paper, the dependability of 3rd generation telecommunications network systems is studied. Special attention is paid to a case where increased-reliability-risk electronic components are introduced to the system. The paper consists of three parts: First, the reliability data of four electronic components is considered. This includes statistical analysis of the reliability test data, thermo-mechanical finite element analysis of the printed wiring board structures, and based on those, a field reliability estimate of the components is constructed. Second, the component level reliability data is introduced into the network element reliability analysis. This is accomplished by using a reliability block diagram technique and Monte Carlo simulation of the network element. The end result of the second part is a reliability estimate of the network element with and without the high-risk component. Third, the whole 3rd generation network having multiple network elements is analyzed. In this part, the criticality of introducing high-risk electronic components into a 3rd generation telecommunications network is considered.

  18. Dysprosium disilicide nanostructures on silicon(001) studied by scanning tunneling microscopy and transmission electron microscopy

    International Nuclear Information System (INIS)

    Ye Gangfeng; Nogami, Jun; Crimp, Martin A.

    2006-01-01

    The microstructure of self-assembled dysprosium silicide nanostructures on silicon(001) has been studied by scanning tunneling microscopy and transmission electron microscopy. The studies focused on nanostructures that involve multiple atomic layers of the silicide. Cross-sectional high resolution transmission electron microscopy images and fast Fourier transform analysis showed that both hexagonal and orthorhombic/tetragonal silicide phases were present. Both the magnitude and the anisotropy of lattice mismatch between the silicide and the substrate play roles in the morphology and epitaxial growth of the nanostructures formed

  19. Increased electronic coupling in silicon nanocrystal networks doped with F4-TCNQ.

    Science.gov (United States)

    Carvalho, Alexandra; Oberg, Sven; Rayson, Mark J; Briddon, Patrick R

    2013-02-01

    The modification of the electronic structure of silicon nanocrystals using an organic dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), is investigated using first-principles calculations. It is shown that physisorbed F4-TCNQ molecules have the effect of oxidizing the nanocrystal, attracting the charge density towards the F4-TCNQ-nanocrystal interface, and decreasing the excitation energy of the system. In periodic F4-TCNQ/nanocrystal superlattices, F4-TCNQ is suggested to enhance exciton separation, and in the presence of free holes, to serve as a bridge for electron/hole transfer between adjacent nanocrystals.

  20. Implosion lessons from national security, high reliability spacecraft, electronics, and the forces which changed them

    CERN Document Server

    Temple, L Parker

    2012-01-01

    Implosion is a focused study of the history and uses of high-reliability, solid-state electronics, military standards, and space systems that support our national security and defense. This book is unique in combining the interdependent evolution of and interrelationships among military standards, solid-state electronics, and very high-reliability space systems. Starting with a brief description of the physics that enabled the development of the first transistor, Implosion covers the need for standardizing military electronics, which began during World War II and continu

  1. Design for Reliability of Power Electronics for Grid-Connected Photovoltaic Systems

    DEFF Research Database (Denmark)

    Yang, Yongheng; Sangwongwanich, Ariya; Blaabjerg, Frede

    2016-01-01

    Power electronics is the enabling technology for optimizing energy harvesting from renewable systems like Photovoltaic (PV) and wind power systems, and also for interfacing grid-friendly energy systems. Advancements in the power semiconductor technology (e.g., wide band-gap devices) have pushed...... the conversion efficiency of power electronics to above 98%, where however te reliability of power electronics is becoming of high concern. Therefore, it is important to design for reliable power electronic systems to lower the risks of many failures during operation; otherwise will increase the cost...... for maintenance and reputation, thus affecting the cost of PV energy. Today's PV power conversion applications require the power electronic systems with low failure rates during a service life of 20 years or even more. To achieve so, it is vital to know the main life-limiting factors of power electronic systems...

  2. The influence of oxidation properties on the electron emission characteristics of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    He, Li [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Xiaoning, E-mail: znn@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Wenjiang [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Haicheng [School of Electrical and Information Engineering, Beifang University of Nationalities, Yinchuan750021 (China)

    2016-09-30

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm{sup 2} and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  3. The influence of oxidation properties on the electron emission characteristics of porous silicon

    International Nuclear Information System (INIS)

    He, Li; Zhang, Xiaoning; Wang, Wenjiang; Wei, Haicheng

    2016-01-01

    Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm"2 and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

  4. Detecting single-electron events in TEM using low-cost electronics and a silicon strip sensor.

    Science.gov (United States)

    Gontard, Lionel C; Moldovan, Grigore; Carmona-Galán, Ricardo; Lin, Chao; Kirkland, Angus I

    2014-04-01

    There is great interest in developing novel position-sensitive direct detectors for transmission electron microscopy (TEM) that do not rely in the conversion of electrons into photons. Direct imaging improves contrast and efficiency and allows the operation of the microscope at lower energies and at lower doses without loss in resolution, which is especially important for studying soft materials and biological samples. We investigate the feasibility of employing a silicon strip detector as an imaging detector for TEM. This device, routinely used in high-energy particle physics, can detect small variations in electric current associated with the impact of a single charged particle. The main advantages of using this type of sensor for direct imaging in TEM are its intrinsic radiation hardness and large detection area. Here, we detail design, simulation, fabrication and tests in a TEM of the front-end electronics developed using low-cost discrete components and discuss the limitations and applications of this technology for TEM.

  5. Top-down topography of deeply etched silicon in the scanning electron microscope

    International Nuclear Information System (INIS)

    Wells, Oliver C.; Murray, Conal E.; Rullan, Jonathan L.; Gignac, Lynne M.

    2004-01-01

    It is proposed to measure the cross sections of steep-sided etched lines and similar deep surface topography on partially completed silicon integrated circuit wafers using either the backscattered electron (BSE) or the low-loss electron (LLE) image in the scanning electron microscope (SEM). These images contain regions where the collected signal is zero because there is no direct line of sight between the landing point of the electron beam on the specimen and the BSE or LLE detector. It is proposed to use the boundary of such a region in the SEM image as a geometrical line to measure the surface topography. Or alternatively, a shadow can be seen in the distribution of either BSE or LLE with an image-forming detector system. The use of this shadow position on the detector to measure deep surface topography will be demonstrated

  6. Electronics and readout of a large area silicon detector for LHC

    International Nuclear Information System (INIS)

    Borer, K.; Munday, D.J.; Parker, M.A.; Anghinolfi, F.; Aspell, P.; Campbell, M.; Chilingarov, A.; Jarron, P.; Heijne, E.H.M.; Santiard, J.C.; Scampoli, P.; Verweij, H.; Goessling, C.; Lisowski, B.; Reichold, A.; Spiwoks, R.; Tsesmelis, E.; Benslama, K.; Bonino, R.; Clark, A.G.; Couyoumtzelis, C.; Kambara, H.; Wu, X.; Fretwurst, E.; Lindstroem, G.; Schultz, T.; Bardos, R.A.; Gorfine, G.W.; Moorhead, G.F.; Taylor, G.N.; Tovey, S.N.; Bibby, J.H.; Hawkings, R.J.; Kundu, N.; Weidberg, A.; Campbell, D.; Murray, P.; Seller, P.; Teiger, J.

    1994-01-01

    The purpose of the RD2 project is to evaluate the feasibility of a silicon tracker and/or preshower detector for LHC. Irradiation studies with doses equivalent to those expected at LHC have been performed to determine the behavior of operational parameters such as leakage current, depletion voltage and charge collection during the life of the detector. The development of fast, dense, low power and low cost signal processing electronics is one of the major activities of the collaboration. We describe the first fully functional integrated analog memory chip with asynchronous read and write operations and level 1 trigger capture capabilities. A complete test beam system using this analog memory chip at 66 MHz has been successfully operated with RD2 prototype silicon detectors during various test runs. The flexibility of the electronics and readout have allowed us to easily interface our set-up to other data acquisition systems. Mechanical studies are in progress to design a silicon tracking detector with several million channels that may be operated at low (0-10 C) temperature, while maintaining the required geometrical precision. Prototype readout boards for such a detector are being developed and simulation studies are being performed to optimize the readout architecture. (orig.)

  7. Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

    Science.gov (United States)

    Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

    2013-07-01

    The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

  8. Mapping boron in silicon solar cells using electron energy-loss spectroscopy

    DEFF Research Database (Denmark)

    in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell. [1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M......Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p...... resolution using TEM is highly challenging [3]. Recently, scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) and spherical aberration-correction has allowed the direct detection of dopant concentration of 10^20cm-3 in 65-nm-wide silicon devices [4]. Here, we prepare TEM samples...

  9. Electronic structures of ultra-thin silicon carbides deposited on graphite

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

  10. The invention of graphene electronics and the physics of epitaxial graphene on silicon carbide

    International Nuclear Information System (INIS)

    De Heer, Walt A

    2012-01-01

    Graphene electronics was officially invented at the Georgia Institute of Technology in 2003 after experimental and theoretical research on graphene properties starting from 2001. This paper focuses on the motivation and events leading to the invention of graphene electronics, as well as on recent developments. Graphene electronics was originally conceived as a new electronics paradigm to incorporate the room-temperature ballistic and coherent properties of carbon nanotubes in a patternable electronic material. Graphene on silicon carbide was chosen as the most suitable material. Other electronics schemes, involving transferred (exfoliated and chemical vapor deposition-produced) graphitic materials, that operate in the diffusive regime may not be competitive with standard methods and may therefore not significantly impact electronics. In recent years, epitaxial graphene has improved to the point where graphene electronics according to the original concept appears to be within reach. Beyond electronics, epitaxial graphene research has led to important developments in graphene physics in general and has become a leading platform for graphene science as well.

  11. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    International Nuclear Information System (INIS)

    Tanaka, Masaki; Higashida, Kenji

    2005-01-01

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals

  12. Development of silicon pad detectors and readout electronics for a Compton camera

    CERN Document Server

    Studen, A; Clinthorne, N H; Czermak, A; Dulinski, W; Fuster, J A; Han, L; Jalocha, P; Kowal, M; Kragh, T; Lacasta, C; Llosa, G; Meier, D; Mikuz, M; Nygård, E; Park, S J; Roe, S; Rogers, W L; Sowicki, B; Weilhammer, P; Wilderman, S J; Yoshioka, K; Zhang, L

    2003-01-01

    Applications in nuclear medicine and bio-medical engineering may profit using a Compton camera for imaging distributions of radio-isotope labelled tracers in organs and tissues. These applications require detection of photons using thick position-sensitive silicon sensors with the highest possible energy and good spatial resolution. In this paper, research and development on silicon pad sensors and associated readout electronics for a Compton camera are presented. First results with low-noise, self-triggering VATAGP ASIC's are reported. The measured energy resolution was 1.1 keV FWHM at room temperature for the sup 2 sup 4 sup 1 Am photo-peak at 59.5 keV.

  13. Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

    Science.gov (United States)

    Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

    1997-01-01

    The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

  14. Miniature silicon photodiodes for photon and electron radiation dosimetry in therapeutical applications

    International Nuclear Information System (INIS)

    Gilar, O.; Petr, I.

    1986-01-01

    The silicon diode is manufactured from P type silicon, the P layer is implanted with boron atoms and the N layer with phosphorus atoms. The diode dimensions are 2x2x0.2 mm. It is encased in elastic tissue-equivalent material. The electrodes are from an Al foil. The diode can be used as an in-vivo dosemeter in human body cavities. When irradiated, it supplies information on the instantaneous dose rate at a given point and on the dose cumulated over a certain time. Its current response to gamma radiation kerma rate is linear, directional sensitivity is isotropic. Temperature sensitivity of the photodiode is shown graphically for the range 20 to 40 degC, and the depth dose distribution measured in a water phantom is given for 6, 12 and 20 MeV photons and electrons. The diode energy dependence shows increased sensitivity to low-energy photons. (M.D.)

  15. A Survey on the Reliability of Power Electronics in Electro-Mobility Applications

    DEFF Research Database (Denmark)

    Gadalla, Brwene Salah Abdelkarim; Schaltz, Erik; Blaabjerg, Frede

    2015-01-01

    Reliability is an important issue in the field of power electronics since most of the electrical energy is today processed by power electronics. In most of the electro-mobility applications, e.g. electric and hybridelectric vehicles, power electronic are commonly used in very harsh environment...... and extending the service lifetime as well. Research within power electronics is of high interest as it has an important impact in the industry of the electro-mobility applications. According to the aforementioned explanations, this paper will provide an overview of the common factors (thermal cycles, power...... cycles, vibrations, voltage stress and current ripple stress) affecting the reliability of power electronics in electromobility applications. Also, the researchers perspective is summarized from 2001 to 2015....

  16. Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics.

    Science.gov (United States)

    Hertel, S; Waldmann, D; Jobst, J; Albert, A; Albrecht, M; Reshanov, S; Schöner, A; Krieger, M; Weber, H B

    2012-07-17

    Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10(4) and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

  17. A new series of two-dimensional silicon crystals with versatile electronic properties

    Science.gov (United States)

    Chae, Kisung; Kim, Duck Young; Son, Young-Woo

    2018-04-01

    Silicon (Si) is one of the most extensively studied materials owing to its significance to semiconductor science and technology. While efforts to find a new three-dimensional (3D) Si crystal with unusual properties have made some progress, its two-dimensional (2D) phases have not yet been explored as much. Here, based on a newly developed systematic ab initio materials searching strategy, we report a series of novel 2D Si crystals with unprecedented structural and electronic properties. The new structures exhibit perfectly planar outermost surface layers of a distorted hexagonal network with their thicknesses varying with the atomic arrangement inside. Dramatic changes in electronic properties ranging from semimetal to semiconducting with indirect energy gaps and even to one with direct energy gaps are realized by varying thickness as well as by surface oxidation. Our predicted 2D Si crystals with flat surfaces and tunable electronic properties will shed light on the development of silicon-based 2D electronics technology.

  18. Measurement of the drift velocities of electrons and holes in high-ohmic silicon

    International Nuclear Information System (INIS)

    Scharf, Christian

    2014-02-01

    Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

  19. Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

    Science.gov (United States)

    Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

    2018-06-01

    Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

  20. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanwen [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Xue, Haizhou [Univ. of Tennessee, Knoxville, TN (United States); Zarkadoula, Eva [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sachan, Ritesh [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Army Research Office, Triangle Park, NC (United States); Ostrouchov, Christopher [Univ. of Tennessee, Knoxville, TN (United States); Liu, Peng [Univ. of Tennessee, Knoxville, TN (United States); Shandong Univ., Jinan (China); Wang, Xue -lin [Shandong Univ., Jinan (China); Zhang, Shuo [Lanzhou Univ., Gansu Province (China); Wang, Tie Shan [Lanzhou Univ., Gansu Province (China); Weber, William J. [Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-10-16

    Understanding energy dissipation processes in electronic/atomic subsystems and subsequent non-equilibrium defect evolution is a long-standing challenge in materials science. In the intermediate energy regime, energetic particles simultaneously deposit a significant amount of energy to both electronic and atomic subsystems of silicon carbide (SiC). Here we show that defect evolution in SiC closely depends on the electronic-to-nuclear energy loss ratio (Se/Sn), nuclear stopping powers (dE/dxnucl), electronic stopping powers (dE/dxele), and the temporal and spatial coupling of electronic and atomic subsystem for energy dissipation. The integrated experiments and simulations reveal that: (1) increasing Se/Sn slows damage accumulation; (2) the transient temperatures during the ionization-induced thermal spike increase with dE/dxele, which causes efficient damage annealing along the ion trajectory; and (3) for more condensed displacement damage within the thermal spike, damage production is suppressed due to the coupled electronic and atomic dynamics. Ionization effects are expected to be more significant in materials with covalent/ionic bonding involving predominantly well-localized electrons. Here, insights into the complex electronic and atomic correlations may pave the way to better control and predict SiC response to extreme energy deposition

  1. Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-03-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. (c) 2010 Elsevier Inc. All rights reserved.

  2. Analysis of performance reliability of electrical and electronic equipment of car-tractor

    Directory of Open Access Journals (Sweden)

    Kravchenko О.Р.

    2016-08-01

    Full Text Available The analysis of the operational reliability of electrical and electronic equipment of vehicles, trucks Mercedes-Benz Actros 1844 LS and Volvo FH 1242, conducting international cargo transportation is performed. It is established that the equipment is reliable, which meets modern requirements, but where there is a violation of the resolution. The reason for repair work is constructive and operational factors. Distribution of efficiency and overall performance of operational reliability is retrieved. Items with more bounce are found. Common factors of violation of efficiency cars, trucks in operation, are largely different stages in warranty runs are obtained.

  3. Electron beam irradiation of porous silicon for application in micromachining and sensing

    International Nuclear Information System (INIS)

    Borini, S.; Rocchia, M.; Rossi, A.M.; Boarino, L.; Amato, G.

    2005-01-01

    We have studied the effect of the electron beam (EB) irradiation on porous silicon (PS), in order to find new possibilities for the local modification of the material at the submicrometer scale. The interaction between the accelerated electrons and PS has been investigated by means of two main techniques: infrared spectroscopy and profilometric measurements. All the results show that a strong increase of reactivity is induced on PS surface under exposure to the EB, due to the hydrogen desorption provoked by the incident electrons. We demonstrate that this phenomenon can be exploited for both the lateral structuring and the local functionalization of PS, at the submicrometer scale, depending on the different treatments applied to the samples after the EB bombardment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Effect of silicone gel breast prosthesis on electron and photon dose distributions

    International Nuclear Information System (INIS)

    Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

    1983-01-01

    The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9-20 MeV electron beams and 1.25-15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prosthesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

  5. Effect of silicone gel breast prosthesis on electron and photon dose distributions

    International Nuclear Information System (INIS)

    Krishnan, L.; St George, F.J.; Mansfield, C.M.; Krishnan, E.C.

    1983-01-01

    The effect of a silicone gel breast prosthesis on the absorbed dose distribution of 9--20 MeV electron beams and 1.25--15 MV photon beams was studied. Compared to water measurements, at depths smaller than the practical range of the electron beams, the central axis depth dose values below the prothesis were lower for all energies by as much as 3.5%. However, at depths near the practical range, the central axis depth dose values for the prosthesis were greater than that of water by as much as 33%. Since this occurs near the end of the electron range, the resultant difference may not be clinically significant. Results of the effect of breast prosthesis on photon depth dose distributions reveal that no clinically significant perturbation is produced by the breast prosthesis using Co-60, 6- and 15-MV radiations

  6. Statistical strength properties, loading and reliability of structures made of reaction bonded silicon nitride

    International Nuclear Information System (INIS)

    Maier, H.R.; Nink, H.; Krauth, A.

    1977-01-01

    A prediction of the reliability of structural components requires the definition of transfer data from the combination of materials data, design criteria and application conditions. The determination and transfer of strength data are one unit and therefore similar approximations are necessary. The influence of loading conditions, proof testing and analysing methods is explained with bending tests of rectangular specimens and burst tests of big tubes at room temperature. The drop in strength from 180 N/mm 2 to 50 N/mm 2 via a size factor of 10 5 is predicted and experimentally verified with the most simple statistical extension. The results have been applied to special problems of stress concentrations and give conclusions for test techniques and design fundamentals. (orig.) [de

  7. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  8. Aan der Waals terminated silicon(111) surfaces and interfaces. Preparation, morphology, and electronic properties

    International Nuclear Information System (INIS)

    Fritsche, R.

    2004-01-01

    The aim of this thesis is the implementation of the concept of the quasi-van der Waals epitaxy as a new perspective for the integration of reactive and lattice-defect fitted materials into the silicon technology. The experimental characterization of this approach pursues in two subsequent sections. First the chemical and electronic passivation of a three-dimensional substrate (silicon) is studied by means of an ultrathin buffer layer from the material class of the layered-lattice chalcogenides (GaSe). The substrate surface (Si(111):GaSe) modified in this way possesses an inert van der Waals surface and serves in the following as base for the deposition of the against the non-passivated substrate really reactive and lattice-defect fitted materials (II-VI-compound semiconductors and metals) The characterization of the electronic and chemical properties of the surfaces and interfaces pursues with highly resolved photoelectron spectroscopy (SXPS). The results are supplemented by the characterization of the morphology by the diffraction of low-energy electrons (LEED) and the scanning tunnel microscopy (STM)

  9. Bright luminance from silicon dioxide film with carbon nanotube electron beam exposure

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Su Woong; Hong, Ji Hwan; Kang, Jung Su; Callixte, Shikili; Park, Kyu Chang, E-mail: kyupark@khu.ac.kr

    2016-02-15

    We observed the bright bluish-white luminescence with naked eye from carbon nanotube electron beam exposed silicon dioxide (SiO{sub 2}) thin film on Si substrate. The luminescence shows a peak intensity at 2.7 eV (460 nm) with wide spread up to 600 nm after the C-beam exposed on SiO{sub 2} thin film. The C-beam exposure system is composed of carbon nanotube emitters as electron beam source. The brightness strongly depend on the exposure condition. Luminescence characteristic was optimized by C-beam adjustment to observe with the naked eye. The cause of luminescence in the C-beam exposed SiO{sub 2} thin film is analyzed by CL microscopy, FT-IR, AFM and ellipsometer. Decrease of Si–O bonding was observed after C-beam exposure, and this reveals that oxygen deficient defects which are irradiation-sensitive cause 2.7 eV peak of luminescence. - Highlights: • We observed bright luminescence for SiO{sub 2} thin film with naked eye by carbon nanotube electron beam (C-beam) exposure technique. • The bright luminance from C-beam exposed SiO{sub 2} film will open novel silicon optoelectronics.

  10. Insight into electronic mechanisms of nanosecond-laser ablation of silicon

    International Nuclear Information System (INIS)

    Marine, Wladimir; Patrone, Lionel; Ozerov, Igor; Bulgakova, Nadezhda M.

    2008-01-01

    We present experimental and theoretical studies of nanosecond ArF excimer laser desorption and ablation of silicon with insight into material removal mechanisms. The experimental studies involve a comprehensive analysis of the laser-induced plume dynamics and measurements of the charge gained by the target during irradiation time. At low laser fluences, well below the melting threshold, high-energy ions with a narrow energy distribution are observed. When the fluence is increased, a thermal component of the plume is formed superimposing on the nonthermal ions, which are still abundant. The origin of these ions is discussed on the basis of two modeling approaches, thermal and electronic, and we analyze the dynamics of silicon target excitation, heating, melting, and ablation. An electronic model is developed that provides insight into the charge-carrier transport in the target. We demonstrate that, contrary to a commonly accepted opinion, a complete thermalization between the electron and lattice subsystems is not reached during the nanosecond-laser pulse action. Moreover, the charging effects can retard the melting process and have an effect on the overall target behavior and laser-induced plume dynamics

  11. Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection

    Science.gov (United States)

    Qi, Zhiyang; Zhai, Yusheng; Wen, Long; Wang, Qilong; Chen, Qin; Iqbal, Sami; Chen, Guangdian; Xu, Ji; Tu, Yan

    2017-07-01

    The heterojunction between metal and silicon (Si) is an attractive route to extend the response of Si-based photodiodes into the near-infrared (NIR) region, so-called Schottky barrier diodes. Photons absorbed into a metallic nanostructure excite the surface plasmon resonances (SPRs), which can be damped non-radiatively through the creation of hot electrons. Unfortunately, the quantum efficiency of hot electron detectors remains low due to low optical absorption and poor electron injection efficiency. In this study, we propose an efficient and low-cost plasmonic hot electron NIR photodetector based on a Au nanoparticle (Au NP)-decorated Si pyramid Schottky junction. The large-area and lithography-free photodetector is realized by using an anisotropic chemical wet etching and rapid thermal annealing (RTA) of a thin Au film. We experimentally demonstrate that these hot electron detectors have broad photoresponsivity spectra in the NIR region of 1200-1475 nm, with a low dark current on the order of 10-5 A cm-2. The observed responsivities enable these devices to be competitive with other reported Si-based NIR hot electron photodetectors using perfectly periodic nanostructures. The improved performance is attributed to the pyramid surface which can enhance light trapping and the localized electric field, and the nano-sized Au NPs which are beneficial for the tunneling of hot electrons. The simple and large-area preparation processes make them suitable for large-scale thermophotovoltaic cell and low-cost NIR detection applications.

  12. Conversion electron spectrometry of Pu isotopes with a silicon drift detector.

    Science.gov (United States)

    Pommé, S; Paepen, J; Peräjärvi, K; Turunen, J; Pöllänen, R

    2016-03-01

    An electron spectrometry set-up was built at IRMM consisting of a vacuum chamber with a moveable source holder and windowless Peltier-cooled silicon drift detector (SDD). The SDD is well suited for measuring low-energy x rays and electrons emitted from thin radioactive sources with low self-absorption. The attainable energy resolution is better than 0.5keV for electrons of 30keV. It has been used to measure the conversion electron spectra of three plutonium isotopes, i.e. (238)Pu, (239)Pu, (240)Pu, as well as (241)Am (being a decay product of (241)Pu). The obtained mixed x-ray and electron spectra are compared with spectra obtained with a close-geometry set-up using another SDD in STUK and spectra measured with a Si(Li) detector at IRMM. The potential of conversion electron spectrometry for isotopic analysis of mixed plutonium samples is investigated. With respect to the (240)Pu/(239)Pu isotopic ratio, the conversion electron peaks of both isotopes are more clearly separated than their largely overlapping peaks in alpha spectra. Copyright © 2015 The Authors. Published by Elsevier Ltd.. All rights reserved.

  13. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    OpenAIRE

    Kang, Jin Sung

    2012-01-01

    Inkjet printing of electrode using copper nanoparticle ink is presented. Electrode was printed on a flexible glass epoxy composite substrate using drop on demand piezoelectric dispenser and was sintered at 200°C in N2 gas condition. The printed electrodes were made with various widths and thicknesses. Surface morphology of electrode was analyzed using scanning electron microscope (SEM) and atomic force microscope (AFM). Reliable dimensions for printed electronics were found from this study. S...

  14. Characterization of electron beam evaporated carbon films and compound formation on titanium and silicon

    International Nuclear Information System (INIS)

    Luthin, J.; Linsmeier, C.

    2001-01-01

    The formation of carbon-based mixed materials is unavoidable on the plasma-facing components (e.g. first wall and divertor) of fusion devices when carbon is used together with other materials. On the surfaces of these components very different conditions with respect to particle and energy impact occur. To predict the mixed material formation under these conditions the precise knowledge of the fundamental mechanisms governing these interactions is essential. In this paper we present the results of carbon interaction with titanium and silicon, as model substances for metallic and covalent carbides, during thermal treatment. To perform basic studies of the reactions of carbon with different elements, thin carbon films are produced by electron beam evaporation on the different substrates under UHV conditions. All measurements for chemical analysis are performed using X-ray photoelectron spectroscopy (XPS). We discuss first the properties of the deposited carbon films. The carbon films are characterized on inert gold surfaces and are compared to bulk graphite. Annealing of the carbon films up to 970 K leads to a transition from a disordered carbon network into a graphitic structure. Preparation of carbon films at room temperature on titanium or silicon leads to a limited carbide formation at the carbon/substrate interface. Carbon deposited in excess of several monolayers is present in elementary form. Annealing of the samples leads to complete carbidization consuming the available carbon in both cases. Titanium reacts to TiC and additional substoichiometric carbide, silicon forms SiC with exact stoichiometry. (orig.)

  15. Comparative Study on Electronic, Emission, Spontaneous Property of Porous Silicon in Different Solvents

    Directory of Open Access Journals (Sweden)

    M. Naziruddin Khan

    2014-01-01

    Full Text Available Luminescent porous silicon (Psi fabricated by simple chemical etching technique in different organic solvents was studied. By quantifying the silicon wafer piece, optical properties of the Psi in solutions were investigated. Observation shows that no photoluminescence light of Psi in all solvents is emitted. Morphology of Psi in different solvents indicates that the structure and distribution of Psi are differently observed. Particles are uniformly dispersive with the sizes around more or less 5–8 nm. The crystallographic plane and high crystalline nature of Psi is observed by selected area diffraction (SED and XRD. Electronic properties of Psi in solutions are influenced due to the variation of quantity of wafer and nature of solvent. Influence in band gaps of Psi calculated by Tauc’s method is obtained due to change of absorption edge of Psi in solvents. PL intensities are observed to be depending on quantity of silicon wafer, etched cross-section area on wafer surface. Effects on emission peaks and bands of Psi under temperature annealing are observed. The spontaneous signals of Psi measured under high power Pico second laser 355 nm source are significant, influenced by the nature of solvent, pumped energy, and quantity of Si wafer piece used in etching process.

  16. Correlation of displacement effects produced by electrons, protons, and neutrons in silicon

    International Nuclear Information System (INIS)

    van Lint, V.A.J.; Gigas, G.; Barengoltz, J.

    1975-01-01

    The correlation of displacement effects produced by electrons, protons, and neutrons in silicon is studied. Available data from the literature is employed. In particular the scope of the study is limited to the degradation of excess carrier lifetime and device electrical parameters directly related to it. The degree to which displacement effects may be correlated in order to predict semiconductor device response based on response data to another type of radiation is discussed. Useful ranges of the correlation factors (K/sub tau/ ratios) as a function of device majority carrier type, device resistivity, and injection level are presented. A significant dependence on injection level for the correlation factors is found

  17. Structural, dynamical, and electronic properties of amorphous silicon: An ab initio molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Car, R.; Parrinello, M.

    1988-01-18

    An amorphous silicon structure is obtained with a computer simulation based on a new molecular-dynamics technique in which the interatomic potential is derived from a parameter-free quantum mechanical method. Our results for the atomic structure, the phonon spectrum, and the electronic properties are in excellent agreement with experiment. In addition we study details of the microscopic dynamics which are not directly accessible to experiment. We find in particular that structural defects are associated with weak bonds. These may give rise to low-frequency vibrational modes.

  18. Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

    Energy Technology Data Exchange (ETDEWEB)

    Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

    2013-12-23

    Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

  19. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  20. First-principles study of structural & electronic properties of pyramidal silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jariwala, Pinank; Thakor, P. B. [Department of Physics, Veer Narmad South Gujarat University, Surat 395 007, Gujarat (India); Singh, Deobrat; Sonvane, Y. A., E-mail: yasonvane@gmail.com [Department of Applied Physics, S. V. National Institute of Technology, Surat 395 007 (India); Gupta, Sanjeev K. [Department of Physics, St. Xavier’s College, Ahmedabad 38 0009 (India)

    2016-05-23

    We have investigated the stable structural and electronic properties of Silicon (Si) nanowires having different cross-sections with 5-7 Si atoms per unit cell. These properties of the studied Si nanowires were significantly changed from those of diamond bulk Si structure. The binding energy increases as increasing atoms number per unit cell in different SiNWs structures. All the nanowires structures are behave like metallic rather than semiconductor in bulk systems. In general, the number of conduction channels increases when the nanowire becomes thicker. The density of charge revealed delocalized metallic bonding for all studied Si nanowires.

  1. Electronic detection of surface plasmon polaritons by metal-oxide-silicon capacitor

    Directory of Open Access Journals (Sweden)

    Robert E. Peale

    2016-09-01

    Full Text Available An electronic detector of surface plasmon polaritons (SPPs is reported. SPPs optically excited on a metal surface using a prism coupler are detected by using a close-coupled metal-oxide-silicon (MOS capacitor. Incidence-angle dependence is explained by Fresnel transmittance calculations, which also are used to investigate the dependence of photo-response on structure dimensions. Electrodynamic simulations agree with theory and experiment and additionally provide spatial intensity distributions on and off the SPP excitation resonance. Experimental dependence of the photoresponse on substrate carrier type, carrier concentration, and back-contact biasing is qualitatively explained by simple theory of MOS capacitors.

  2. Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates

    International Nuclear Information System (INIS)

    Kim, Y.Y.; Lenahan, P.M.

    1988-01-01

    We have used electron-spin resonance to investigate radiation-induced point defects in Si/SiO 2 structures with (100) silicon substrates. We find that the radiation-induced point defects are quite similar to defects generated in Si/SiO 2 structures grown on (111) silicon substrates. In both cases, an oxygen-deficient silicon center, the E' defect, appears to be responsible for trapped positive charge. In both cases trivalent silicon (P/sub b/ centers) defects are primarily responsible for radiation-induced interface states. In earlier electron-spin-resonance studies of unirradiated (100) substrate capacitors two types of P/sub b/ centers were observed; in oxides prepared in three different ways only one of these centers, the P/sub b/ 0 defect, is generated in large numbers by ionizing radiation

  3. 26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules -- South Array

    Science.gov (United States)

    Olakonu, Kolapo

    As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kW dc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kW ac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power

  4. A silicon microstrip detector in a magnetic spectrometer for high-resolution electron scattering experiments at the S-DALINAC

    International Nuclear Information System (INIS)

    Lenhardt, A.W.; Bonnes, U.; Burda, O.; Neumann-Cosel, P. von; Platz, M.; Richter, A.; Watzlawik, S.

    2006-01-01

    A silicon microstrip detector was developed as focal plane detector of the 169.7 deg. magic angle double-focussing spectrometer at the superconducting Darmstadt electron linear accelerator (S-DALINAC). It allows experiments with minimum ionizing electrons at data rates up to 100 kHz, utilizing the maximum resolution of the spectrometer achievable in dispersion-matching mode

  5. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

    Science.gov (United States)

    Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

    2017-04-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  7. Electronic transport in mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

    Science.gov (United States)

    Wienkes, Lee Raymond

    Interest in mixed-phase silicon thin film materials, composed of an amorphous semiconductor matrix in which nanocrystalline inclusions are embedded, stems in part from potential technological applications, including photovoltaic and thin film transistor technologies. Conventional mixed-phase silicon films are produced in a single plasma reactor, where the conditions of the plasma must be precisely tuned, limiting the ability to adjust the film and nanoparticle parameters independently. The films presented in this thesis are deposited using a novel dual-plasma co-deposition approach in which the nanoparticles are produced separately in an upstream reactor and then injected into a secondary reactor where an amorphous silicon film is being grown. The degree of crystallinity and grain sizes of the films are evaluated using Raman spectroscopy and X-ray diffraction respectively. I describe detailed electronic measurements which reveal three distinct conduction mechanisms in n-type doped mixed-phase amorphous/nanocrystalline silicon thin films over a range of nanocrystallite concentrations and temperatures, covering the transition from fully amorphous to ~30% nanocrystalline. As the temperature is varied from 470 to 10 K, we observe activated conduction, multiphonon hopping (MPH) and Mott variable range hopping (VRH) as the nanocrystal content is increased. The transition from MPH to Mott-VRH hopping around 100K is ascribed to the freeze out of the phonon modes. A conduction model involving the parallel contributions of these three distinct conduction mechanisms is shown to describe both the conductivity and the reduced activation energy data to a high accuracy. Additional support is provided by measurements of thermal equilibration effects and noise spectroscopy, both done above room temperature (>300 K). This thesis provides a clear link between measurement and theory in these complex materials.

  8. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Li, He; Wenjiang, Wang, E-mail: wwj@mail.xjtu.edu.cn; Xiaoning, Zhang

    2017-03-31

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm{sup 2} and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H{sup +} but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  9. Improvement of electron emission characteristics of porous silicon emitter by using cathode reduction and electrochemical oxidation

    International Nuclear Information System (INIS)

    Li, He; Wenjiang, Wang; Xiaoning, Zhang

    2017-01-01

    Highlights: • An electron emitter based on porous silicon having the strong application potential was prepared in the studying. • A new simple and convenient post-treat technique was proposed to improve the electron emission properties of the PS emitter. • It demonstrated that the improving of the PS morphology and the oxygen distribution is very important to the PS emitter. - Abstract: A new simple and convenient post-treat technique combined the cathode reduction (CR) and electrochemical oxidation (ECO) was proposed to improve the electron emission properties of the surface-emitting cold cathodes based on the porous silicon (PS). It is demonstrated here that by introducing this new technique combined CR and ECO, the emission properties of the diode have been significantly improved than those as-prepared samples. The experimental results showed that the emission current densities and efficiencies of sample treated by CR were 62 μA/cm"2 and 12.10‰, respectively, nearly 2 orders of magnitude higher than those of as-prepared sample. Furthermore, the CR-treated PS emitter shows higher repeatability and stability compared with the as-prepared PS emitter. The scanning electron microscope (SEM), atomic force microscope (AFM), energy dispersive spectrometer (EDS), furier transformed infrared (FTIR) spectroscopy results indicated that the improved mechanism is mainly due to the passivation of the PS, which not only improve the PS morphology by the passivation of the H"+ but also improve the uniformity of the oxygen content distribution in the whole PS layer. Therefore, the method combined the CR treatment and ECO is expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

  10. Measurements of the ballistic-phonon component resulting from nuclear and electron recoils in crystalline silicon

    International Nuclear Information System (INIS)

    Lee, A.T.; Cabrera, B.; Dougherty, B.L.; Penn, M.J.; Pronko, J.G.; Tamura, S.

    1996-01-01

    We present measurements of the ballistic-phonon component resulting from nuclear and electron recoils in silicon at ∼380 mK. The detectors used for these experiments consist of a 300-μm-thick monocrystal of silicon instrumented with superconducting titanium transition-edge sensors. These sensors detect the initial wavefront of athermal phonons and give a pulse height that is sensitive to changes in surface-energy density resulting from the focusing of ballistic phonons. Nuclear recoils were generated by neutron bombardment of the detector. A Van de Graaff proton accelerator and a thick 7 Li target were used. Pulse-height spectra were compared for neutron, x-ray, and γ-ray events. A previous analysis of this data set found evidence for an increase in the ballistic-phonon component for nuclear recoils compared to electron recoils at a 95% confidence level. An improved understanding of the detector response has led to a change in the result. In the present analysis, the data are consistent with no increase at the 68% confidence level. This change stems from an increase in the uncertainty of the result rather than a significant change in the central value. The increase in ballistic phonon energy for nuclear recoils compared to electron recoils as a fraction of the total phonon energy (for equal total phonon energy events) was found to be 0.024 +0.041 -0.055 (68% confidence level). This result sets a limit of 11.6% (95% confidence level) on the ballistic phonon enhancement for nuclear recoils predicted by open-quote open-quote hot spot close-quote close-quote and electron-hole droplet models, which is the most stringent to date. To measure the ballistic-phonon component resulting from electron recoils, the pulse height as a function of event depth was compared to that of phonon simulations. (Abstract Truncated)

  11. Quality and reliability assurance of electronic components in small-scale and middle-sized plants

    International Nuclear Information System (INIS)

    Becker, P.

    1982-01-01

    Electronic components are forever finding their way into new fields of application and have an ever increasing influence on the quality and reliability of the products in which they are used. The user has very negligible influence on the production methods used for the manufacture of the components and the element properties. (orig.) [de

  12. Effects of 400 keV electrons flux on two space grade silicone rubbers

    Energy Technology Data Exchange (ETDEWEB)

    Jochem, H. [ONERA – The French Aerospace Lab, F-31055 Toulouse (France); Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); CNES – French Aerospace Agency, 18 Avenue Edouard Belin, F-31401 Toulouse Cedex 9 (France); Rejsek-Riba, V. [ONERA – The French Aerospace Lab, F-31055 Toulouse (France); Maerten, E., E-mail: maerten@chimie.ups-tlse.fr [Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); Remaury, S. [CNES – French Aerospace Agency, 18 Avenue Edouard Belin, F-31401 Toulouse Cedex 9 (France); Solé, S.; Sierra, G. [MAP Coatings – ZI, 2 Rue Clément Ader, 09100 Pamiers (France); Baceiredo, A. [Université de Toulouse, UPS, and CNRS, LHFA, UMR 5069, 118 route de Narbonne, F-31062 Toulouse Cedex 9 (France); Guillaumon, O. [MAP Coatings – ZI, 2 Rue Clément Ader, 09100 Pamiers (France)

    2013-08-15

    Two different space grade silicone rubbers were irradiated by an electron flux of 400 keV. The irradiation impact strongly depends on the chemical structure of rubbers (one reinforced with MQ resins, and the other one functionalized with phenyl groups at the silicon atoms and reinforced with silica). The irradiated rubbers were studied by means of solvent swelling, solid-state {sup 29}Si NMR, and ATR–FTIR spectroscopy. Physical properties were evaluated by thermal (differential scanning calorimetry), mechanical (dynamic mechanical analysis), and thermo-optical (ultraviolet–visible–near infrared spectroscopy) analyses. The formation of silicium T units and Si–CH{sub 2}–Si networks were evidenced by {sup 29}Si NMR, and the increase of the glass transition temperature and of modulus reflect the substantial increase in the macromolecular chain rigidity of the irradiated material. Dramatic damages of mechanical properties were observed, depending on the reinforced materials used. Slight changes of thermo-optical properties were highlighted independently to the initial chemical structure. - Highlights: • Electron flux radiations generate chains cross-linking. • Cross-linking occurs by T and Si–CH{sub 2}–Si units formation. • The cross-linking rate is slightly faster for 2D rubber compared to 3D rubber. • Modulus increases much more significantly for 3D rubber.

  13. Impact of low-dose electron irradiation on n+p silicon strip sensors

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Henkel, Ch.; Hoffmann, M.; Junkes, A.; Klanner, R.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schuwalow, S.; Schwandt, J.; Sola, V.; Steinbruck, G.; Vormwald, B.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kortelainen, M.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J., III; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2015-01-01

    The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positi...

  14. Electronic structure of xenon implanted with low energy in amorphous silicon

    International Nuclear Information System (INIS)

    Barbieri, P.F.; Landers, R.; Oliveira, M.H. de; Alvarez, F.; Marques, F.C.

    2007-01-01

    Electronic structure of Xe implanted in amorphous silicon (a-Si) films are investigated. Xe atoms were implanted with low energy by ion beam assisted deposition (IBAD) technique during growth of the a-Si films. The Xe implantation energy varied in the 0-300 eV energy range. X-ray photoelectron spectroscopy (XPS), X-ray Auger excited spectroscopy (XAES) and X-ray absorption spectroscopy (XAS) were used for investigating the Xe electronic structure. The Xe M 4 N 45 N 45 transitions were measured to extract the Auger parameter and to analyze the initial state and relaxation contributions. It was found that the binding energy variation is mainly due to initial state contribution. The relaxation energy variation also shows that the Xe trapped environment depends on the implantation energy. XAS measurements reveals that Xe atoms are dispersed in the a-Si matrix

  15. Silicon oxide: a non-innocent surface for molecular electronics and nanoelectronics studies.

    Science.gov (United States)

    Yao, Jun; Zhong, Lin; Natelson, Douglas; Tour, James M

    2011-02-02

    Silicon oxide (SiO(x)) has been widely used in many electronic systems as a supportive and insulating medium. Here, we demonstrate various electrical phenomena such as resistive switching and related nonlinear conduction, current hysteresis, and negative differential resistance intrinsic to a thin layer of SiO(x). These behaviors can largely mimic numerous electrical phenomena observed in molecules and other nanomaterials, suggesting that substantial caution should be paid when studying conduction in electronic systems with SiO(x) as a component. The actual electrical phenomena can be the result of conduction from SiO(x) at a post soft-breakdown state and not the presumed molecular or nanomaterial component. These electrical properties and the underlying mechanisms are discussed in detail.

  16. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

    International Nuclear Information System (INIS)

    Poklonski, N. A.; Gorbachuk, N. I.; Shpakovski, S. V.; Lastovskii, S. B.; Wieck, A.

    2010-01-01

    Silicon diodes with a p + -n junction irradiated with 3.5-MeV electrons (the fluence ranged from 10 15 to 4 x 10 16 cm -2 ) have been studied. It is established that the dependence of the tangent of the angle of electrical losses tanδ on the frequency f of alternating current in the range f = 10 2 -10 6 Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences tanδ(f) as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of n-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of tanδ(f) is insignificant.

  17. Radiation defect distribution in silicon irradiated with 600 keV electrons

    International Nuclear Information System (INIS)

    Hazdra, P.; Dorschner, H.

    2003-01-01

    Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

  18. Radiation damage of silicon structures with electrons of 900 MeV

    CERN Document Server

    Rachevskaia, I; Bosisio, L; Dittongo, S; Quai, E; Rizzo, G

    2002-01-01

    We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion.

  19. Climatic Reliability of Electronics: Early Prediction and Control of Contamination and humidity effects

    DEFF Research Database (Denmark)

    Verdingovas, Vadimas

    were to a significant extent guided by the climatic reliability issues the electronic companies are currently facing. The research in this thesis is focused on the synergistic effects of process related contamination, humidity, potential bias, and PCBA design related aspects, while various tests...... assuming parasitic circuit due to water layer formation on the PCBA surface. The chapters 2-5 review the factors influencing the climatic reliability of electronics namely humidity interaction with materials and ionic contamination on the PCBA surface, common types and sources of ionic contamination...... in electronics, the test methods and techniques, and failure mechanisms related to climate and contamination. Chapter 6 summarizes the materials and experimental methods employed in this thesis. The results of various investigations are presented as individual research papers as published or in the draft form...

  20. Angular sensitivity of modeled scientific silicon charge-coupled devices to initial electron direction

    Energy Technology Data Exchange (ETDEWEB)

    Plimley, Brian, E-mail: brian.plimley@gmail.com [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Coffer, Amy; Zhang, Yigong [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Vetter, Kai [Nuclear Engineering Department, University of California, Berkeley, CA (United States); Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

    2016-08-11

    Previously, scientific silicon charge-coupled devices (CCDs) with 10.5-μm pixel pitch and a thick (650 μm), fully depleted bulk have been used to measure gamma-ray-induced fast electrons and demonstrate electron track Compton imaging. A model of the response of this CCD was also developed and benchmarked to experiment using Monte Carlo electron tracks. We now examine the trade-off in pixel pitch and electronic noise. We extend our CCD response model to different pixel pitch and readout noise per pixel, including pixel pitch of 2.5 μm, 5 μm, 10.5 μm, 20 μm, and 40 μm, and readout noise from 0 eV/pixel to 2 keV/pixel for 10.5 μm pixel pitch. The CCD images generated by this model using simulated electron tracks are processed by our trajectory reconstruction algorithm. The performance of the reconstruction algorithm defines the expected angular sensitivity as a function of electron energy, CCD pixel pitch, and readout noise per pixel. Results show that our existing pixel pitch of 10.5 μm is near optimal for our approach, because smaller pixels add little new information but are subject to greater statistical noise. In addition, we measured the readout noise per pixel for two different device temperatures in order to estimate the effect of temperature on the reconstruction algorithm performance, although the readout is not optimized for higher temperatures. The noise in our device at 240 K increases the FWHM of angular measurement error by no more than a factor of 2, from 26° to 49° FWHM for electrons between 425 keV and 480 keV. Therefore, a CCD could be used for electron-track-based imaging in a Peltier-cooled device.

  1. Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

    International Nuclear Information System (INIS)

    Gentile, C.A.; Fan, H.M.; Hartfield, J.W.; Hawryluk, R.J.; Hegeler, F.; Heitzenroeder, P.J.; Jun, C.H.; Ku, L.P.; LaMarche, P.H.; Myers, M.C.; Parker, J.J.; Parsells, R.F.; Payen, M.; Raftopoulos, S.; Sethian, J.D.

    2002-01-01

    The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W · cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated with 500 nm thin-film silicon nitride (Si 3 N 4 ), has been fabricated. The window consists of 81 square panes with a thickness of 0.019 mm ± 0.001 mm. Stiffened (orthogonal) sections are 0.065 mm in width and 0.500 mm thick (approximate). Appended drawing (Figure 1) depicts the window configuration. Assessment of silicon (and silicon nitride) material properties and CAD modeling and analysis of the window design suggest that silicon may be a viable solution to inherent parameters and constraints

  2. Design for reliability in power electronics in renewable energy systems – status and future

    DEFF Research Database (Denmark)

    Wang, Huai; Blaabjerg, Frede; Ma, Ke

    2013-01-01

    Advances in power electronics enable efficient and flexible interconnection of renewable sources, loads and electric grids. While targets concerning efficiency of power converters are within reach, recent research endeavors to predict and improve their reliability to ensure high availability, low...... maintenance costs, and herefore, low Levelized-Cost-of-Energy (LCOE) of renewable energy systems. This paper presents the prior-art Design for Reliability (DFR) process for power converters and addresses the paradigm shift to Physics-of-Failure (PoF) approach and mission profile based analysis. Moreover...

  3. Thermal Management and Reliability of Automotive Power Electronics and Electric Machines

    Energy Technology Data Exchange (ETDEWEB)

    Narumanchi, Sreekant V [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bennion, Kevin S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Cousineau, Justine E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); DeVoto, Douglas J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Feng, Xuhui [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kekelia, Bidzina [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kozak, Joseph P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Major, Joshua [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Moreno, Gilberto [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Paret, Paul P [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tomerlin, Jeff J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-02-09

    Low-cost, high-performance thermal management technologies are helping meet aggressive power density, specific power, cost, and reliability targets for power electronics and electric machines. The National Renewable Energy Laboratory is working closely with numerous industry and research partners to help influence development of components that meet aggressive performance and cost targets through development and characterization of cooling technologies, and thermal characterization and improvements of passive stack materials and interfaces. Thermomechanical reliability and lifetime estimation models are important enablers for industry in cost-and time-effective design.

  4. Assessment of Electronic Circuits Reliability Using Boolean Truth Table Modeling Method

    International Nuclear Information System (INIS)

    EI-Shanshoury, A.I.

    2011-01-01

    This paper explores the use of Boolean Truth Table modeling Method (BTTM) in the analysis of qualitative data. It is widely used in certain fields especially in the fields of electrical and electronic engineering. Our work focuses on the evaluation of power supply circuit reliability using (BTTM) which involves systematic attempts to falsify and identify hypotheses on the basis of truth tables constructed from qualitative data. Reliability parameters such as the system's failure rates for the power supply case study are estimated. All possible state combinations (operating and failed states) of the major components in the circuit were listed and their effects on overall system were studied

  5. A silicon strip detector used as a high rate focal plane sensor for electrons in a magnetic spectrometer

    CERN Document Server

    Miyoshi, T; Fujii, Y; Hashimoto, O; Hungerford, E V; Sato, Y; Sarsour, M; Takahashi, T; Tang, L; Ukai, M; Yamaguchi, H

    2003-01-01

    A silicon strip detector was developed as a focal plane sensor for a 300 MeV electron spectrometer and operated in a high rate environment. The detector with 500 mu m pitch provided good position resolution for electrons crossing the focal plane of the magnetic spectrometer system which was mounted in Hall C of the Thomas Jefferson National Accelerator Facility. The design of the silicon strip detector and the performance under high counting rate (<=2.0x10 sup 8 s sup - sup 1 for approx 1000 SSD channels) and high dose are discussed.

  6. Development of an IMRT quality assurance program using an amorphous silicon electronic portal imaging device

    International Nuclear Information System (INIS)

    Hunt, P.; Oliver, L.; Mallik, A.

    2000-01-01

    Full text: Quality Assurance (QA) for an intensity modulated radiotherapy (IMRT) megavoltage beam is a complex task. The positional accuracy of the MLC; its radiation leakage; the overall distribution of the dose delivered as compared to the treatment plan and; the accuracy of the calculated monitor units to deliver this dose, are all important parameters to clinically monitor. We are presently assessing the Varian version 6 software package with CadPlan, Helios with IMRT and inverse planning, VARiS Vision and the linear accelerator DMLC controller. Whilst conventional QA tools such as ionisation chamber and film measurements are used, these methods are inconvenient for directly monitoring an IMRT patient treatment. Varian Medical Systems has developed an improved electronic portal imaging device (EPID) with an amorphous silicon (a-Si) detector array. The A-Si has a sensitive area of 40x30cm and an improved image resolution of 512x384 pixels. Images are recorded at approximately 7-10 frames per second for an exposure rate of 100-600 MU/minute. Although the A-Si was designed as an EPID for a static treatment field, this new device could be a valuable IMRT QA tool for a range of different tests. Measurements taken on the RNSH and Varian prototype A-Si EPI devices showed a linear dose response for 6-18MeV X-ray energy. In addition to the Varian IAS2 internal software handlers, we have developed some image data handling programs to view and analyse these images in more detail. The software is primarily used to view the images; measure the reading in a region of interest or profile; or merge, overlay, add or subtract images during the analysis. The small pixel resolution provides a reliable, highly accurate means of measuring beam size, leaf position, MLC radiation leakage or profile intensity curves with a positional accuracy of 0.8mm. The images produced by an IMRT exposure is clearly discernible and appears consistent with the result expected. Step wedge images

  7. Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

    Science.gov (United States)

    2016-05-01

    AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a...Shukla, K., “Thermo-fluid dynamics of Loop Heat Pipe Operation,” International Communications in Heat and Mass Transfer , Vol. 35, No. 8, 2008, pp

  8. Investigation of influence of electronic irradiation on photoluminescence spectrum and ir-spectrum of porous silicon

    International Nuclear Information System (INIS)

    Daineko, E.A.; Dihanbayev, K.K.; Akhtar, P.; Hussain, A.

    2007-01-01

    In this article we study the influence of 2-Mev electron irradiation on porous silicon (PS). Photoluminescence (PL) spectrum and IR-spectrum have been done on both newly-prepared PS samples and samples prepared a year ago after the irradiation. We analyzed PL spectrum for both types of PS samples. The experimental results suggest that the peak position in PL spectrum decreases for newly-prepared PS samples. The size of the nanocrystals calculated by the method of singling out of spectrum components was equal to 3.0-3.2 nm. Porosity of the samples was 60-75%. From IR-spectrum of newly-prepared PS samples wide absorption band was observed at 1100 cm/sup -1/ (Si-O-Si bond). Another peak of Si-O-Si group was observed at 850 cm/sub -1/. Also hydrogen absorption bands were appearing from 2000 to 2200 cm/sup -1/, corresponding to vibration modes SiH, SiH/sub 2/, SiH/sub 3/. As a result of electron irradiation the PL intensity of newly-prepared PS samples decreases abruptly by a factor of 30 without peak shifting. As for the samples prepared a year ago we observed a decrease in the PL intensity by 25-30%. From IR-spectrum of PS samples prepared a year ago it was shown that the intensity of bridge bonds corresponding to absorption band 850 cm/sup -1/, decreases gradually. Our experimental data shows that PS samples stored for longer time have better radiation resistant properties than the newly-prepared PS samples due to the replacement of Si-H bonds with more resistant Si-O bonds. Porous silicon, electrochemical anodizing, photoluminescence spectrum, IR-spectrum, electronic irradiation. (author)

  9. Double and triple crystal diffraction investigation on ion implanted and electron beam annealed silicon

    International Nuclear Information System (INIS)

    Servidori, M.; Cembali, F.; Winter, U.; Zaumseil, P.; Richter, H.

    1985-01-01

    Double (DCD) and triple crystal (TCD) diffractometry was used to investigate radiation damage produced in silicon by silicon bombardment and its evolution after electron beam annealing. The implantation processes were carried out at 60 keV energy and at doses of 0.5, 1, 5, 10, 50, 100, and 200 x 10 13 ions/cm 2 . As to the annealing treatments, an electron gun was used, operating in the ranges 7.5 to 24 W/cm 2 and 2 to 20 seconds. DCD rocking curves were analyzed by means of the dynamical theory of X-ray diffraction. The formalism introduced by Taupin was used to simulate the experimental intensity profiles. From the resulting best fits, the lattice strain vs. depth profiles were obtained, indicating an increase of the damage with dose for the as-implanted samples up to 1 x 10 14 cm -2 dose, whereas amorphous layers are produced for the higher doses. After annealing, lowering of the residual strain was observed to be directly proportional to the implanted dose. In particular, a complete recovery of the damage occurred for the 0.5 and 1 x 10 13 cm -2 samples. The results obtained by the fitting procedure were substantially independent from the power densities and times used during electron beam irradiation. TCD as a very sensitive method to investigate lattice defects after implantation was used to obtain information about the crystallographic perfection of the surface layer. The absence of diffuse scattering indicates that the annealed layers do not contain microdefects within the detection limits. (author)

  10. Feasibility of conversion electron spectrometry using a Peltier-cooled silicon drift detector

    International Nuclear Information System (INIS)

    Perajarvi, K.; Turunen, J.; Ihantola, S.; Pollanen, R.; Siiskonen, T.; Toivonen, H.; Kamarainen, V.; Pomme, S.

    2014-01-01

    A Peltier-cooled silicon drift detector was successfully applied for conversion electron spectrometry. The energy resolution of the detector for 45 keV electrons was 0.50 keV (FWHM). The approximate thickness of the dead layer was determined to be 140 ± 20 nm Si equivalent. The relative efficiency of the detector was verified to be approximately constant in the energy range of 17-75 keV. This is concordant with the high transparency of the thin dead layer and the sufficient thickness of the detector (450 μm) to stop the electrons. The detector is suitable for use in plutonium analysis of chemically prepared samples. Moreover, it was demonstrated that conversion electron spectrometry is better than alpha spectrometry in preserving its capability to determine the 240 Pu/ 239 Pu isotopic ratio as a function of sample thickness. The investigated measurement technique can be considered a promising new tool in safeguards, complementary to existing methods. (author)

  11. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    International Nuclear Information System (INIS)

    Mouro, J.; Gualdino, A.; Chu, V.; Conde, J. P.

    2013-01-01

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n + -type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force

  12. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    Energy Technology Data Exchange (ETDEWEB)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  13. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. The ALICE silicon pixel detector front-end and read-out electronics

    CERN Document Server

    Kluge, A

    2006-01-01

    The ALICE silicon pixel detector (SPD) comprises the two innermost barrel layers of the ALICE inner tracker system. The SPD includes 120 half staves each of which consists of a linear array of 10 ALICE pixel chips bump bonded to two silicon sensors. Each pixel chip contains 8192 active cells, so the total number of pixel cells in the SPD is ≈107. The tight material budget and the limitation in physical dimensions required by the detector design introduce new challenges for the integration of the on-detector electronics. An essential part of the half stave is a low-mass multi-layer flex that carries power, ground, and signals to the pixel chips. Each half stave is read out using a multi-chip module (MCM). The MCM contains three radiation hard ASICs and an 800 Mbit/s custom developed optical link for the data transfer between the detector and the control room. The detector components are less than 3 mm thick. The production of the half-staves and MCMs is currently under way. Test results as well as on overvie...

  15. Radiation Damage Effects and Performance of Silicon Strip Detectors using LHC Readout Electronics

    CERN Document Server

    AUTHOR|(CDS)2067734

    1998-01-01

    Future high energy physics experiments as the ATLAS experiment at CERN, will use silicon strip detectors for fast and high precision tracking information. The high hadron fluences in these experiments cause permanent damage in the silicon.Additional energy levels are introduced in the bandgap thus changing the electrical properties such as leakage current and full depletion voltage V_fd .Very high leakage currents are observed after irradiation and lead to higher electronic noise and thus decrease the spatial resolution.V_fd increases to a few hundred volts after irradiation and eventually beyond the point of stable operating voltages. Prototype detectors with either p-implanted strips (p-in-n) and n-implanted strip detectors (n-in-n) were irradiated to the maximum expected fluence in ATLAS.The irradiation and the following study of the current and V_fd were carried out under ATLAS operational conditions.The evolution of V_fd after irradiation is compared to models based on diode irradiations.The qualitative ...

  16. Two-electron spin correlations in precision placed donors in silicon.

    Science.gov (United States)

    Broome, M A; Gorman, S K; House, M G; Hile, S J; Keizer, J G; Keith, D; Hill, C D; Watson, T F; Baker, W J; Hollenberg, L C L; Simmons, M Y

    2018-03-07

    Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16 ± 1 nm. By utilising an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.

  17. Reliability of Capacitors for DC-Link Applications in Power Electronic Converters

    DEFF Research Database (Denmark)

    Wang, Huai; Blaabjerg, Frede

    2014-01-01

    DC-link capacitors are an important part in the majority of power electronic converters which contribute to cost, size and failure rate on a considerable scale. From capacitor users' viewpoint, this paper presents a review on the improvement of reliability of dc link in power electronic converters...... from two aspects: 1) reliability-oriented dc-link design solutions; 2) conditioning monitoring of dc-link capacitors during operation. Failure mechanisms, failure modes and lifetime models of capacitors suitable for the applications are also discussed as a basis to understand the physics......-of-failure. This review serves to provide a clear picture of the state-of-the-art research in this area and to identify the corresponding challenges and future research directions for capacitors and their dc-link applications....

  18. Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect

    International Nuclear Information System (INIS)

    Zhang Xiangao; Fang Zhonghui; Chen Kunji; Xu Jun; Huang Xinfan

    2011-01-01

    We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current-voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.

  19. Study of the effect of neutron and electron irradiations on the low temperature thermal conductivity of germanium and silicon

    International Nuclear Information System (INIS)

    Vandevyver, M.

    1967-06-01

    The main results obtained from this work are the following: 1 Neutron irradiation (at 300 deg. K) produces lattice defects in germanium and silicon, and a corresponding very large lowering of the thermal conductivity is observed in the low temperature region (4-300 ). The results obtained have been explained with the help of the following hypotheses: for silicon a scattering of phonons by the stress fields produced by the defects; for germanium, a supplementary scattering of the electron phonon type. 2 Annealing treatments carried out on these materials above 373 deg. K restored the thermal conductivity over the whole temperature range of the measurements (4-300 deg. K); in the case of both germanium and silicon there were two steps in the annealing process. 3 A study of the thermal conductivity of germanium (initially P or N) after an electronic irradiation showed that the scattering of phonons could depend on the state of charge of the defects thus produced. (author) [fr

  20. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  1. High-fidelity adiabatic inversion of a {sup 31}P electron spin qubit in natural silicon

    Energy Technology Data Exchange (ETDEWEB)

    Laucht, Arne, E-mail: a.laucht@unsw.edu.au; Kalra, Rachpon; Muhonen, Juha T.; Dehollain, Juan P.; Mohiyaddin, Fahd A.; Hudson, Fay; Dzurak, Andrew S.; Morello, Andrea [Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, New South Wales 2052 (Australia); McCallum, Jeffrey C.; Jamieson, David N. [Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia)

    2014-03-03

    The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit inversion fidelities for an electron spin qubit bound to a {sup 31}P atom in natural silicon, by applying adiabatic sweeps instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of simple adiabatic inversion techniques for spin control in fluctuating environments.

  2. Influence of oxidation treatment on ballistic electron surface-emitting display of porous silicon

    International Nuclear Information System (INIS)

    Du, Wentao; Zhang, Xiaoning; Zhang, Yujuan; Wang, Wenjiang; Duan, Xiaotao

    2012-01-01

    Two groups of porous silicon (PS) samples are treated by rapid thermal oxidation (RTO) and electrochemical oxidation (ECO), respectively. Scanning electron microscopy images show that PS samples are segmented into two layers. Oxidized film layer is formed on the top surface of PS samples treated by RTO while at the bottom of PS samples treated by ECO. Both ECO and RTO treatment can make emission current density, diode current density, and emission efficiency of PS increase with the bias voltage increasing. The emission current density and the field emission enhancement factor β of PS sample treated by RTO are larger than that treated by ECO. The Fowler–Nordheim curves of RTO and ECO samples are linear which indicates that high electric field exists on the oxidized layer and field emission occurs whether PS is treated by RTO or ECO.

  3. Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

    International Nuclear Information System (INIS)

    Chen, J.; Sekiguchi, T.; Xie, R.; Ahmet, P.; Chikyo, T.; Yang, D.; Ito, S.; Yin, F.

    2005-01-01

    Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs

  4. Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

    Science.gov (United States)

    Skalare, Anders; Stern, Jeffrey; Bumble, Bruce; Maiwald, Frank

    2005-01-01

    A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

  5. Biodegradable elastomers and silicon nanomembranes/nanoribbons for stretchable, transient electronics, and biosensors.

    Science.gov (United States)

    Hwang, Suk-Won; Lee, Chi Hwan; Cheng, Huanyu; Jeong, Jae-Woong; Kang, Seung-Kyun; Kim, Jae-Hwan; Shin, Jiho; Yang, Jian; Liu, Zhuangjian; Ameer, Guillermo A; Huang, Yonggang; Rogers, John A

    2015-05-13

    Transient electronics represents an emerging class of technology that exploits materials and/or device constructs that are capable of physically disappearing or disintegrating in a controlled manner at programmed rates or times. Inorganic semiconductor nanomaterials such as silicon nanomembranes/nanoribbons provide attractive choices for active elements in transistors, diodes and other essential components of overall systems that dissolve completely by hydrolysis in biofluids or groundwater. We describe here materials, mechanics, and design layouts to achieve this type of technology in stretchable configurations with biodegradable elastomers for substrate/encapsulation layers. Experimental and theoretical results illuminate the mechanical properties under large strain deformation. Circuit characterization of complementary metal-oxide-semiconductor inverters and individual transistors under various levels of applied loads validates the design strategies. Examples of biosensors demonstrate possibilities for stretchable, transient devices in biomedical applications.

  6. Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface

    International Nuclear Information System (INIS)

    Ogawa, Masatoshi; Kamiya, Shoji; Izumi, Hayato; Tokuda, Yutaka

    2012-01-01

    This paper focuses on the effects of temperature and environment on the electronic properties of dislocations in n-type single crystal silicon near the surface. Deep level transient spectroscopy (DLTS) analyses were carried out with Schottky electrodes and p + -n junctions. The trap level, originally found at E C -0.50 eV (as commonly reported), shifted to a shallower level at E C -0.23 eV after a heat treatment at 350 K in an inert environment. The same heat treatment in lab air, however, did not cause any shift. The trap level shifted by the heat treatment in an inert environment was found to revert back to the original level when the specimens were exposed to lab air again. Therefore, the intrinsic trap level is expected to occur at E C -0.23 eV and shift sensitively with gas adsorption in air.

  7. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-10-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius.

  8. Ab initio density functional theory investigation of structural and electronic properties of silicon carbide nanotube bundles

    International Nuclear Information System (INIS)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2008-01-01

    By using ab initio density functional theory the structural and electronic properties of isolated and bundled (8,0) and (6,6) silicon carbide nanotubes (SiCNTs) are investigated. Our results show that for such small diameter nanotubes the inter-tube interaction causes a very small radial deformation, while band splitting and reduction of the semiconducting energy band gap are significant. We compared the equilibrium interaction energy and inter-tube separation distance of (8,0) SiCNT bundle with (10,0) carbon nanotube (CNT) bundle where they have the same radius. We found that there is a larger inter-tube separation and weaker inter-tube interaction in the (8,0) SiCNT bundle with respect to (10,0) CNT bundle, although they have the same radius

  9. Impact of low-dose electron irradiation on n{sup +}p silicon strip sensors

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2015-12-11

    The response of n{sup +}p silicon strip sensors to electrons from a {sup 90}Sr source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 μm thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 μm, and both p-stop and p-spray isolation of the n{sup +} strips were studied. The electrons from the {sup 90}Sr source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO{sub 2} at the maximum was about 50 Gy(SiO{sub 2})/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 °C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO{sub 2} by the radiation from the β source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n{sup +}p strip sensors is discussed.

  10. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong, E-mail: xdwang@semi.ac.cn; Ji, An; Yang, Fuhua [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 (China)

    2014-03-15

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  11. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Directory of Open Access Journals (Sweden)

    Yangyang Qi

    2014-02-01

    Full Text Available The electron transport characteristics of silicon nanowires (SiNWs fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  12. Electron transport characteristics of silicon nanowires by metal-assisted chemical etching

    Science.gov (United States)

    Qi, Yangyang; Wang, Zhen; Zhang, Mingliang; Wang, Xiaodong; Ji, An; Yang, Fuhua

    2014-03-01

    The electron transport characteristics of silicon nanowires (SiNWs) fabricated by metal-assisted chemical etching with different doping concentrations were studied. By increasing the doping concentration of the starting Si wafer, the resulting SiNWs were prone to have a rough surface, which had important effects on the contact and the electron transport. A metal-semiconductor-metal model and a thermionic field emission theory were used to analyse the current-voltage (I-V) characteristics. Asymmetric, rectifying and symmetric I-V curves were obtained. The diversity of the I-V curves originated from the different barrier heights at the two sides of the SiNWs. For heavily doped SiNWs, the critical voltage was one order of magnitude larger than that of the lightly doped, and the resistance obtained by differentiating the I-V curves at large bias was also higher. These were attributed to the lower electron tunnelling possibility and higher contact barrier, due to the rough surface and the reduced doping concentration during the etching process.

  13. Comparison between electron-beam and chemical crosslinking of silicone rubber

    Energy Technology Data Exchange (ETDEWEB)

    Frounchi, Masoud [Polymer Engineering Group, Department of Chemical and Petroleum Engineering, Sharif University of Technology, Azadi Ave, Tehran (Iran, Islamic Republic of)]. E-mail: frounchi@sharif.edu; Dadbin, Susan [Yazd Processing Center, Atomic Energy Organization of Iran, Tehran (Iran, Islamic Republic of); Panahinia, Farhad [Polymer Engineering Group, Department of Chemical and Petroleum Engineering, Sharif University of Technology, Azadi Ave, Tehran (Iran, Islamic Republic of)

    2006-02-15

    Silicone rubber (SR) was irradiated by electron beam over a dose range of 50-300 kGy in the absence of chemical reagents. Molecular weight between crosslinks (M {sub c}) in the network of SB was determined by two methods of solvent swelling and modulus of elasticity. The network structure of the elastomer crosslinked by electron beam irradiation and chemical vulcanization was compared. Mechanical tests were performed to determine shore hardness, tensile elongation, strength and modulus of the samples. It was found that SR is effectively crosslinked by electron beam irradiation. The tensile strength, hardness, modulus and elongation of irradiated SR were higher than peroxide-crosslinked SR. The optimum dose for the neat rubber was 150 kGy which reduced to 50 kGy with addition of 10 wt.% fumed silica. The synergistic effect of fumed silica was verified by M {sub c} measurements which showed a dramatic decrease in presence of fumed silica in the rubber. The synergism in properties was also verified by comparing the modulus values calculated from the Guth-Smallwood equation and experimental data. Absence of chemical reagents in irradiated SR samples makes them a proper choice for medical applications.

  14. Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon.

    Science.gov (United States)

    Sieradzki, A; Kuznicki, Z T

    2013-01-01

    The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.

  15. Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

    Science.gov (United States)

    Stumpf, F.; Abu Quba, A. A.; Singer, P.; Rumler, M.; Cherkashin, N.; Schamm-Chardon, S.; Cours, R.; Rommel, M.

    2018-03-01

    The lateral damage induced by focused ion beam on silicon carbide was characterized using electrical scanning probe microscopy (SPM), namely, scanning spreading resistance microscopy and conductive atomic force microscopy (c-AFM). It is shown that the damage exceeds the purposely irradiated circles with a radius of 0.5 μm by several micrometres, up to 8 μm for the maximum applied ion dose of 1018 cm-2. Obtained SPM results are critically compared with earlier findings on silicon. For doses above the amorphization threshold, in both cases, three different areas can be distinguished. The purposely irradiated area exhibits resistances smaller than the non-affected substrate. A second region with strongly increasing resistance and a maximum saturation value surrounds it. The third region shows the transition from maximum resistance to the base resistance of the unaffected substrate. It correlates to the transition from amorphized to defect-rich to pristine crystalline substrate. Additionally, conventional transmission electron microscopy (TEM) and annular dark-field STEM were used to complement and explain the SPM results and get a further understanding of the defect spreading underneath the surface. Those measurements also show three different regions that correlate well with the regions observed from electrical SPM. TEM results further allow to explain observed differences in the electrical results for silicon and silicon carbide which are most prominent for ion doses above 3 × 1016 cm-2. Furthermore, the conventional approach to perform current-voltage measurements by c-AFM was critically reviewed and several improvements for measurement and analysis process were suggested that result in more reliable and impactful c-AFM data.

  16. Deconvolution of 238,239,240Pu conversion electron spectra measured with a silicon drift detector

    DEFF Research Database (Denmark)

    Pommé, S.; Marouli, M.; Paepen, J.

    2018-01-01

    Internal conversion electron (ICE) spectra of thin 238,239,240Pu sources, measured with a windowless Peltier-cooled silicon drift detector (SDD), were deconvoluted and relative ICE intensities were derived from the fitted peak areas. Corrections were made for energy dependence of the full...

  17. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  18. Structural, dynamical, electronic, and bonding properties of laser-heated silicon: An ab initio molecular-dynamics study

    NARCIS (Netherlands)

    Silvestrelli, P.-L.; Alavi, A.; Parrinello, M.; Frenkel, D.

    1997-01-01

    The method of ab initio molecular dynamics, based on finite-temperature density-functional theory, is used to simulate laser heating of crystalline silicon. We found that a high concentration of excited electrons dramatically weakens the covalent bonding. As a result the system undergoes a melting

  19. Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

    Science.gov (United States)

    Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

    2013-11-26

    In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

  20. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation.

    Science.gov (United States)

    Scherf, Christian; Peter, Christiane; Moog, Jussi; Licher, Jörg; Kara, Eugen; Zink, Klemens; Rödel, Claus; Ramm, Ulla

    2009-08-01

    Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm(3) thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm(2) because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector.

  1. Ab initio density functional theory investigation of structural and electronic properties of double-walled silicon carbide nanotubes

    Science.gov (United States)

    Moradian, Rostam; Behzad, Somayeh; Chegel, Raad

    2009-12-01

    By using ab initio density functional theory, the structural and electronic properties of (n,n)@(11,11) double-walled silicon carbide nanotubes (SiCNTs) are investigated. Our calculations reveal the existence of an energetically favorable double-walled nanotube whose interwall distance is about 4.3 Å. Interwall spacing and curvature difference are found to be essential for the electronic states around the Fermi level.

  2. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

    International Nuclear Information System (INIS)

    Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

    2015-01-01

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters

  3. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

    Science.gov (United States)

    Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

    2015-03-01

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

  4. Coherent bremsstrahlung and channeling radiation from electrons of one to three MeV in silicon and gold

    International Nuclear Information System (INIS)

    Watson, J.E.

    1981-01-01

    The observation of sharp peaks in the x-ray spectrum from 1 to 3 MeV electrons striking thin single crystals of silicon and gold is reported. These peaks were observed in the range 1 to 25 keV. The peaks are of two different origins, both direct results of the periodic nature of the target crystals. The first kind of radiation is caused by the interference of incoming and scattered electron wave functions. Because of the periodicity of the target material there is a coherence effect for certain bremsstrahlung wave vectors. This coherent bremsstrahlung, though well known at very high electron energies, has never been adequately studied at electron energies below several hundred MeV. Detailed agreement between theoretical prediction and observation in silicon is shown. The second kind of radiation is caused by electrons channeled along major crystal axes. The electrons enter certain quantized orbits as they channel and may emit photons as a consequence of transitions between the various orbits. Observations of channeling radiation for various crystal axes in silicon are presented. Both phenomena were observed in gold, the first such observation for any metallic target

  5. The impact of surface coverage on the kinetics of electron transfer through redox monolayers on a silicon electrode surface

    International Nuclear Information System (INIS)

    Ciampi, Simone; Choudhury, Moinul H.; Ahmad, Shahrul Ainliah Binti Alang; Darwish, Nadim; Brun, Anton Le; Gooding, J.Justin

    2015-01-01

    Graphical abstract: The impact of surface coverage on the kinetics of electron transfer through redox monolayers on a silicon electrode surface. ABSTRACT: The impact of the coverage of ferrocene moieties, attached to a silicon electrode modified via hydrosilylation of a dialkyne, on the kinetics of electron transfer between the redox species and the electrode is explored. The coverage of ferrocene is controlled by varying the coupling time between azidomethylferrocene and the distal alkyne of the monolayer via the copper assisted azide-alkyne cycloaddition reaction. All other variables in the surface preparation are maintained identical. What is observed is that the higher the surface coverage of the ferrocene moieties the faster the apparent rates of electron transfer. This surface coverage-dependent kinetic effect is attributed to electrons hopping between ferrocene moieties across the redox film toward hotspots for the electron transfer event. The origin of these hotspots is tentatively suggested to result from minor amounts of oxide on the underlying silicon surface that reduce the barrier for the electron transfer.

  6. Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

    Science.gov (United States)

    Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

    2018-01-01

    The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

  7. Dissolution of Monocrystalline Silicon Nanomembranes and Their Use as Encapsulation Layers and Electrical Interfaces in Water-Soluble Electronics.

    Science.gov (United States)

    Lee, Yoon Kyeung; Yu, Ki Jun; Song, Enming; Barati Farimani, Amir; Vitale, Flavia; Xie, Zhaoqian; Yoon, Younghee; Kim, Yerim; Richardson, Andrew; Luan, Haiwen; Wu, Yixin; Xie, Xu; Lucas, Timothy H; Crawford, Kaitlyn; Mei, Yongfeng; Feng, Xue; Huang, Yonggang; Litt, Brian; Aluru, Narayana R; Yin, Lan; Rogers, John A

    2017-12-26

    The chemistry that governs the dissolution of device-grade, monocrystalline silicon nanomembranes into benign end products by hydrolysis serves as the foundation for fully eco/biodegradable classes of high-performance electronics. This paper examines these processes in aqueous solutions with chemical compositions relevant to groundwater and biofluids. The results show that the presence of Si(OH) 4 and proteins in these solutions can slow the rates of dissolution and that ion-specific effects associated with Ca 2+ can significantly increase these rates. This information allows for effective use of silicon nanomembranes not only as active layers in eco/biodegradable electronics but also as water barriers capable of providing perfect encapsulation until their disappearance by dissolution. The time scales for this encapsulation can be controlled by introduction of dopants into the Si and by addition of oxide layers on the exposed surfaces.The former possibility also allows the doped silicon to serve as an electrical interface for measuring biopotentials, as demonstrated in fully bioresorbable platforms for in vivo neural recordings. This collection of findings is important for further engineering development of water-soluble classes of silicon electronics.

  8. Monte Carlo simulation of secondary electron images for gold nanorods on the silicon substrate

    Science.gov (United States)

    Zhang, P.

    2018-06-01

    Recently, gold nanorods (Au NRs) have attracted much attention because at a particular photoelectricity the gold nanorods present a characteristic which is different from other types of Au nanomaterials with various shapes. Accurate measurement of aspect ratios does provide very high value of optical property for Au NRs. Monte Carlo (MC) simulation is thought of as the most accurate tool to perform size measurement through extracting structure parameters from the simulated scanning electron microscopy (SEM) image which best matches the experimental one. In this article, a series of MC-simulated secondary electron (SE) images have been taken for Au NRs on a silicon substrate. However, it has already been observed that the two ends of Au NRs in the experimental SEM image is brighter than that of the middle part. It seriously affects the accuracy of size measurement for Au NRs. The purpose of this work is to understand the mechanism underlying this phenomenon through a series of systematical analysis. It was found that the cetyltrimethylammonium bromide (CTAB) which covers the Au NRs indeed can alter the contrast of Au NRs compared to that without CTAB covering. However, SEs emitting from CTAB are not the reason for the abnormal brightness at the two ends of NRs. This work reveals that the charging effect might be the leading cause for this phenomenon.

  9. Dose patient verification during treatment using an amorphous silicon electronic portal imaging device in radiotherapy

    International Nuclear Information System (INIS)

    Berger, Lucie

    2006-01-01

    Today, amorphous silicon electronic portal imaging devices (aSi EPID) are currently used to check the accuracy of patient positioning. However, they are not use for dose reconstruction yet and more investigations are required to allow the use of an aSi EPID for routine dosimetric verification. The aim of this work is first to study the dosimetric characteristics of the EPID available at the Institut Curie and then, to check patient dose during treatment using these EPID. First, performance optimization of the Varian aS500 EPID system is studied. Then, a quality assurance system is set up in order to certify the image quality on a daily basis. An additional study on the dosimetric performance of the aS500 EPID is monitored to assess operational stability for dosimetry applications. Electronic portal imaging device is also a useful tool to improve IMRT quality control. The validation and the quality assurance of a portal dose image prediction system for IMRT pre-treatment quality control are performed. All dynamic IMRT fields are verified in clinical routine with the new method based on portal dosimetry. Finally, a new formalism for in vivo dosimetry using transit dose measured with EPID is developed and validated. The absolute dose measurement issue using aSi EPID is described and the midplane dose determination using in vivo dose measurements in combination with portal imaging is used with 3D-conformal-radiation therapy. (author) [fr

  10. EPR and transient capacitance studies on electron-irradiated silicon solar cells

    Science.gov (United States)

    Lee, Y. H.; Cheng, L. J.; Mooney, P. M.; Corbett, J. W.

    1977-01-01

    One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

  11. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  12. Diffusion length of minority carriers in scanning electron beam annealed silicon

    International Nuclear Information System (INIS)

    Smith, H.J.; Cilliers, R.; Bontemps, A.

    1982-01-01

    Ion implantation has advantages for solar cell production, but necessitates an annealing step. Various new transitory annealing methods have appeared recently. A particularly attractive method is multi-scan electron beam annealing of thermally isolated wafers. Energy is applied homogeneously over the whole target surface and the temperature rises throughout the thickness. Backscattering analysis shows good recrystallization in seconds. However the effect of this total heating on the diffusion length (Lsub(D)) must be investigated particularly in view of the degradation of Lsub(D) due to high temperature oven annealing. The semiconductor-electrolyte diode method was set up to measure the current generated in the cell due to the creation and diffusion of carriers in the silicon under photon irradiation. Comparison with a theoretical model yields Lsub(D). It appears that 3mA.cm - 2 of 15keV electrons recrystallizes damage in 2.5 seconds and does not decrease Lsub(D) in the bulk. In 4 seconds the Lsub(D) decreases and dopant diffusion occurs. On technical grounds this method can thus be applied for solar cell production. (Auth.)

  13. Identification of light elements in silicon nitride by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Idrobo, Juan C., E-mail: idrobojc@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Walkosz, Weronika [Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States); Klie, Robert F.; Oeguet, Serdar [Department of Physics, University of Illinois at Chicago, Chicago, IL 60607 (United States)

    2012-12-15

    In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various sintering additives. In the last ten years the atomic arrangements of heavy elements (rare-earths) at the Si{sub 3}N{sub 4}/IGF interfaces have been resolved. However, the atomic position of light elements, without which it is not possible to obtain a complete description of the interfaces, has been lacking. This review article details the authors' efforts to identify the atomic arrangement of light elements such as nitrogen and oxygen at the Si{sub 3}N{sub 4}/SiO{sub 2} interface and in bulk Si{sub 3}N{sub 4} using aberration-corrected scanning transmission electron microscopy. -- Highlights: Black-Right-Pointing-Pointer Revealing the atomic structure of the {alpha}-Si{sub 3}N{sub 4}/SiO{sub 2} interface. Black-Right-Pointing-Pointer Identification and lattice location of oxygen impurities in bulk {alpha}-Si{sub 3}N{sub 4}. Black-Right-Pointing-Pointer Short range ordering of nitrogen and oxygen at the {beta}-Si{sub 3}N{sub 4}/SiO{sub 2} interface.

  14. Self-assembly of silicon nanowires studied by advanced transmission electron microscopy

    Directory of Open Access Journals (Sweden)

    Marta Agati

    2017-02-01

    Full Text Available Scanning transmission electron microscopy (STEM was successfully applied to the analysis of silicon nanowires (SiNWs that were self-assembled during an inductively coupled plasma (ICP process. The ICP-synthesized SiNWs were found to present a Si–SiO2 core–shell structure and length varying from ≈100 nm to 2–3 μm. The shorter SiNWs (maximum length ≈300 nm were generally found to possess a nanoparticle at their tip. STEM energy dispersive X-ray (EDX spectroscopy combined with electron tomography performed on these nanostructures revealed that they contain iron, clearly demonstrating that the short ICP-synthesized SiNWs grew via an iron-catalyzed vapor–liquid–solid (VLS mechanism within the plasma reactor. Both the STEM tomography and STEM-EDX analysis contributed to gain further insight into the self-assembly process. In the long-term, this approach might be used to optimize the synthesis of VLS-grown SiNWs via ICP as a competitive technique to the well-established bottom-up approaches used for the production of thin SiNWs.

  15. Channeling experiments at planar diamond and silicon single crystals with electrons from the Mainz Microtron MAMI

    Science.gov (United States)

    Backe, H.; Lauth, W.; Tran Thi, T. N.

    2018-04-01

    Line structures were observed for (110) planar channeling of electrons in a diamond single crystal even at a beam energy of 180 MeV . This observation motivated us to initiate dechanneling length measurements as function of the beam energy since the occupation of quantum states in the channeling potential is expected to enhance the dechanneling length. High energy loss signals, generated as a result of emission of a bremsstrahlung photon with about half the beam energy at channeling of 450 and 855 MeV electrons, were measured as function of the crystal thickness. The analysis required additional assumptions which were extracted from the numerical solution of the Fokker-Planck equation. Preliminary results for diamond are presented. In addition, we reanalyzed dechanneling length measurements at silicon single crystals performed previously at the Mainz Microtron MAMI at beam energies between 195 and 855 MeV from which we conclude that the quality of our experimental data set is not sufficient to derive definite conclusions on the dechanneling length. Our experimental results are below the predictions of the Fokker-Planck equation and somewhat above the results of simulation calculations of A. V. Korol and A. V. Solov'yov et al. on the basis of the MBN Explorer simulation package. We somehow conservatively conclude that the prediction of the asymptotic dechanneling length on the basis of the Fokker-Planck equation represents an upper limit.

  16. Experimental and theoretical study of the signal electron motion in fully depleted silicon

    International Nuclear Information System (INIS)

    Kimmel, N.; Andritschke, R.; Hartmann, R.; Holl, P.; Meidinger, N.; Richter, R.; Strueder, L.

    2010-01-01

    Imaging spectrometers based on a fully depleted silicon substrate are sensitive over the whole device volume. Therefore, a high detection efficiency for X-rays of up to 20 keV is achieved. Our experimental method facilitates measurements of the detected signal pulse height in a pixel as a function of the photon conversion position in the pixel array. Further analysis of the measurements delivers the size of a signal electron cloud after its drift from the photon conversion position to the storage cells. These results can be used to reconstruct the conversion position of each detected X-ray photon. A reconstruction accuracy of 1μm can be achieved with a pixel size of 51μm. Complementary to the measurements, we have created a physical model of the signal electron collection process. The change of the drift mobility with the electric drift field strength in the detection volume is considered in order to correctly describe the drift speed of the charge cloud. The electric field values and the values of the charge density in the detector volume are delivered by numerical device simulations with the software package 'TeSCA'. Comparisons of the simulations with the measurements confirmed the correctness of the applied physical model. We have thus established a method which enables device designers to simulate the process of signal charge collection in future detector concepts.

  17. Spin-orbit coupling induced two-electron relaxation in silicon donor pairs

    Science.gov (United States)

    Song, Yang; Das Sarma, S.

    2017-09-01

    We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the perceived weak spin-orbit coupling (SOC) in Si, we find that our discovered relaxation mechanism, combined with the electron-phonon and interdonor interactions, drives the transitions in the two-electron states over a large range of donor coupling regimes. The scaling of the relaxation rate with interdonor exchange interaction J goes from J5 to J4 at the low to high temperature limits. Our analytical study draws on the symmetry analysis over combined band, donor envelope, and valley configurations. It uncovers naturally the dependence on the donor-alignment direction and triplet spin orientation, and especially on the dominant SOC source from donor impurities. While a magnetic field is not necessary for this relaxation, unlike in the single-donor spin relaxation, we discuss the crossover behavior with increasing Zeeman energy in order to facilitate comparison with experiments.

  18. The Reliability of Electronic Health Record Data Used for Obstetrical Research.

    Science.gov (United States)

    Altman, Molly R; Colorafi, Karen; Daratha, Kenn B

    2018-01-01

    Hospital electronic health record (EHR) data are increasingly being called upon for research purposes, yet only recently has it been tested to examine its reliability. Studies that have examined reliability of EHR data for research purposes have varied widely in methods used and field of inquiry, with little reporting of the reliability of perinatal and obstetric variables in the current literature. To assess the reliability of data extracted from a commercially available inpatient EHR as compared with manually abstracted data for common attributes used in obstetrical research. Data extracted through automated EHR reports for 3,250 women who delivered a live infant at a large hospital in the Pacific Northwest were compared with manual chart abstraction for the following perinatal measures: delivery method, labor induction, labor augmentation, cervical ripening, vertex presentation, and postpartum hemorrhage. Almost perfect agreement was observed for all four modes of delivery (vacuum assisted: kappa = 0.92; 95% confidence interval [CI] = 0.88-0.95, forceps assisted: kappa = 0.90; 95%CI = 0.76-1.00, cesarean delivery: kappa = 0.91; 95%CI = 0.90-0.93, and spontaneous vaginal delivery: kappa = 0.91; 95%CI = 0.90-0.93). Cervical ripening demonstrated substantial agreement (kappa = 0.77; 95%CI = 0.73-0.80); labor induction (kappa = 0.65; 95%CI = 0.62-0.68) and augmentation (kappa = 0.54; 95%CI = 0.49-0.58) demonstrated moderate agreement between the two data sources. Vertex presentation (kappa = 0.35; 95%CI = 0.31-0.40) and post-partum hemorrhage (kappa = 0.21; 95%CI = 0.13-0.28) demonstrated fair agreement. Our study demonstrates variability in the reliability of obstetrical data collected and reported through the EHR. While delivery method was satisfactorily reliable in our sample, other examined perinatal measures were less so when compared with manual chart abstraction. The use of multiple

  19. Investigation the effect of porosity on corrosion of macroporous silicon in 1.0 M sodium hydroxide solution using weight loss measurements, electrochemical methods and scanning electron microscope

    International Nuclear Information System (INIS)

    Lai, Chuan; Xiang, Zhen

    2015-01-01

    Highlights: • The dissolution of silicon wafers conforms Faraday’s laws of electrolysis. • The porosity effect on macroporous silicon corrosion was investigated. • The corrosion rate increase linearly with porosity increasing. • The porosity effect on activation parameters was obtained. - Abstract: In this study, the macroporous silicon has been fabricated by electrochemical anodization. The dissolution of n-type silicon wafers in etching solution conforms Faraday’s laws of electrolysis. The fabricated macroporous silicon with different porosity corrosion in 1.0 M NaOH was systemically investigated by weight loss measurements, electrochemical methods and scanning electron microscope. Results show that with the porosity increasing, the corrosion rate of macroporous silicon in 1.0 M NaOH increases linearly. In addition, the increase of corrosion rate of macroporous silicon with relative higher porosity was determined by the pre-exponential factor.

  20. Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

    International Nuclear Information System (INIS)

    Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

    2014-01-01

    The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

  1. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

    International Nuclear Information System (INIS)

    Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

    2014-01-01

    We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

  2. Formation of hydrogen-related traps in electron-irradiated n-type silicon by wet chemical etching

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Shimada, Hitoshi

    1998-01-01

    Interaction of hydrogen atoms and vacancy-related defects in 10 MeV electron-irradiated n-type silicon has been studied by deep-level transient spectroscopy. Hydrogen has been incorporated into electron-irradiated n-type silicon by wet chemical etching. The reduction of the concentration of the vacancy-oxygen pair and divacancy occurs by the incorporation of hydrogen, while the formation of the NH1 electron trap (E c - 0.31 eV) is observed. Further decrease of the concentration of the vacancy-oxygen pair and further increase of the concentration of the NH1 trap are observed upon subsequent below-band-gap light illumination. It is suggested that the trap NH1 is tentatively ascribed to the vacancy-oxygen pair which is partly saturated with hydrogen

  3. Positron annihilation lifetime in float-zone n-type silicon irradiated by fast electrons: a thermally stable vacancy defect

    International Nuclear Information System (INIS)

    Arutyunov, Nikolay; Emtsev, Vadim; Oganesyan, Gagik; Krause-Rehberg, Reinhard; Elsayed, Mohamed; Kozlovskii, Vitalii

    2016-01-01

    Temperature dependency of the average positron lifetime has been investigated for n-type float-zone silicon, n-FZ-Si(P), subjected to irradiation with 0.9 MeV electrons at RT. In the course of the isochronal annealing a new defect-related temperature-dependent pattern of the positron lifetime spectra has been revealed. Beyond the well known intervals of isochronal annealing of acceptor-like defects such as E-centers, divacancies and A-centers, the positron annihilation at the vacancy defects has been observed in the course of the isochronal annealing from ∝ 320 C up to the limit of reliable detecting of the defect-related positron annihilation lifetime at ≥ 500 C. These data correlate with the ones of recovery of the concentration of the charge carriers and their mobility which is found to continue in the course of annealing to ∝ 570 C; the annealing is accomplished at ∝650 C. A thermally stable complex consisting of the open vacancy volume and the phosphorus impurity atom, V_o_p-P, is suggested as a possible candidate for interpreting the data obtained by the positron annihilation lifetime spectroscopy. An extended couple of semi-vacancies, 2V_s_-_e_x_t, as well as a relaxed inwards a couple of vacancies, 2V_i_n_w, are suggested as the open vacancy volume V_o_p to be probed with the positron. It is argued that a high thermal stability of the V_s_-_e_x_t PV_s_-_e_x_t (or V_i_n_wPV_i_n_w_.) configuration is contributed by the efficiency of PSi_5 bonding. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Rabi oscillation and electron-spin-echo envelope modulation of the photoexcited triplet spin system in silicon

    Science.gov (United States)

    Akhtar, Waseem; Sekiguchi, Takeharu; Itahashi, Tatsumasa; Filidou, Vasileia; Morton, John J. L.; Vlasenko, Leonid; Itoh, Kohei M.

    2012-09-01

    We report on a pulsed electron paramagnetic resonance (EPR) study of the photoexcited triplet state (S=1) of oxygen-vacancy centers in silicon. Rabi oscillations between the triplet sublevels are observed using coherent manipulation with a resonant microwave pulse. The Hahn echo and stimulated echo decay profiles are superimposed with strong modulations known as electron-spin-echo envelope modulation (ESEEM). The ESEEM spectra reveal a weak but anisotropic hyperfine coupling between the triplet electron spin and a 29Si nuclear spin (I=1/2) residing at a nearby lattice site, that cannot be resolved in conventional field-swept EPR spectra.

  5. Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles

    Science.gov (United States)

    Timerkaeva, Dilyara; Attaccalite, Claudio; Brenet, Gilles; Caliste, Damien; Pochet, Pascal

    2018-04-01

    The structure of the CiCs complex in silicon has long been the subject of debate. Numerous theoretical and experimental studies have attempted to shed light on the properties of these defects that are at the origin of the light emitting G-center. These defects are relevant for applications in lasing, and it would be advantageous to control their formation and concentration in bulk silicon. It is therefore essential to understand their structural and electronic properties. In this paper, we present the structural, electronic, and optical properties of four possible configurations of the CiCs complex in bulk silicon, namely, the A-, B-, C-, and D-forms. The configurations were studied by density functional theory and many-body perturbation theory. Our results suggest that the C-form was misinterpreted as a B-form in some experiments. Our optical investigation also tends to exclude any contribution of A- and B-forms to light emission. Taken together, our results suggest that the C-form could play an important role in heavily carbon-doped silicon.

  6. Study of irradiation effects in the silicon carbide cubic polytype by photoluminescence and electron spin resonance spectroscopies

    International Nuclear Information System (INIS)

    Lefevre, J.

    2008-01-01

    This experimental work has consisted in the study of point defects induced by an electronic irradiation in the cubic crystallographic structure of silicon carbide with low temperature photoluminescence and electron spin resonance spectroscopies. The first one of these measurement tools has allowed to estimate the displacement threshold energy in the silicon sub-lattice and then to analyze the thermal stability of the irradiation defects in the low temperature range: (10-300 K) and then in the high temperature range: (300-1400 K). Besides, on the base of a recent theoretical model, this thesis has confirmed the proposition of the isolated silicon antisite for the D1 center whose running beyond the nominal running temperature of fission nuclear reactors (generation IV), for which SiC is in part intended, seems to be particularly problematic. Measurements carried out by ESR under lighting have at last allowed to detect a new defect in its metastable spin state S=1, possibly associated to a silicon interstitial configuration. (O.M.)

  7. Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon

    Science.gov (United States)

    Takamura, Y.; Marshall, A. F.; Mehta, A.; Arthur, J.; Griffin, P. B.; Plummer, J. D.; Patel, J. R.

    2004-04-01

    Ion implantation followed by laser annealing has been used to create supersaturated and electrically active concentrations of antimony in silicon. Upon subsequent thermal annealing, however, these metastable dopants deactivate towards the equilibrium solubility limit. In this work, the formation of inactive antimony structures has been studied with grazing incidence diffuse x-ray scattering, and transmission electron microscopy, and the results are correlated to previous high-resolution x-ray diffraction data. We find that at a concentration of 6.0×1020 cm-3, small, incoherent clusters of radius 3-4 Å form during annealing at 900 °C. At a higher concentration of 2.2×1021 cm-3, deactivation at 600 °C occurs through the formation of small, antimony aggregates and antimony precipitates. The size of these precipitates from diffuse x-ray scattering is roughly 15 Å in radius for anneal times from 15 to 180 seconds. This value is consistent with the features observed in high-resolution and mass contrast transmission electron microscopy images. The coherent nature of the aggregates and precipitates causes the expansion of the surrounding silicon matrix as the deactivation progresses. In addition, the sensitivity of the diffuse x-ray scattering technique has allowed us to detect the presence of small clusters of radius ˜2 Å in unprocessed Czochralski silicon wafers. These defects are not observed in floating zone silicon wafers, and are tentatively attributed to thermal donors.

  8. Design for Reliability and Robustness Tool Platform for Power Electronic Systems – Study Case on Motor Drive Applications

    DEFF Research Database (Denmark)

    Vernica, Ionut; Wang, Huai; Blaabjerg, Frede

    2018-01-01

    Because of the high cost of failure, the reliability performance of power semiconductor devices is becoming a more and more important and stringent factor in many energy conversion applications. Thus, the need for appropriate reliability analysis of the power electronics emerges. Due to its...

  9. Enabling More than Moore: Accelerated Reliability Testing and Risk Analysis for Advanced Electronics Packaging

    Science.gov (United States)

    Ghaffarian, Reza; Evans, John W.

    2014-01-01

    For five decades, the semiconductor industry has distinguished itself by the rapid pace of improvement in miniaturization of electronics products-Moore's Law. Now, scaling hits a brick wall, a paradigm shift. The industry roadmaps recognized the scaling limitation and project that packaging technologies will meet further miniaturization needs or ak.a "More than Moore". This paper presents packaging technology trends and accelerated reliability testing methods currently being practiced. Then, it presents industry status on key advanced electronic packages, factors affecting accelerated solder joint reliability of area array packages, and IPC/JEDEC/Mil specifications for characterizations of assemblies under accelerated thermal and mechanical loading. Finally, it presents an examples demonstrating how Accelerated Testing and Analysis have been effectively employed in the development of complex spacecraft thereby reducing risk. Quantitative assessments necessarily involve the mathematics of probability and statistics. In addition, accelerated tests need to be designed which consider the desired risk posture and schedule for particular project. Such assessments relieve risks without imposing additional costs. and constraints that are not value added for a particular mission. Furthermore, in the course of development of complex systems, variances and defects will inevitably present themselves and require a decision concerning their disposition, necessitating quantitative assessments. In summary, this paper presents a comprehensive view point, from technology to systems, including the benefits and impact of accelerated testing in offsetting risk.

  10. Design for Reliability and Robustness Tool Platform for Power Electronic Systems – Study Case on Motor Drive Applications

    DEFF Research Database (Denmark)

    Vernica, Ionut; Wang, Huai; Blaabjerg, Frede

    2018-01-01

    conventional approach, mainly based on failure statistics from the field, the reliability evaluation of the power devices is still a challenging task. In order to address the given problem, a MATLAB based reliability assessment tool has been developed. The Design for Reliability and Robustness (DfR2) tool...... allows the user to easily investigate the reliability performance of the power electronic components (or sub-systems) under given input mission profiles and operating conditions. The main concept of the tool and its framework are introduced, highlighting the reliability assessment procedure for power...... semiconductor devices. Finally, a motor drive application is implemented and the reliability performance of the power devices is investigated with the help of the DfR2 tool, and the resulting reliability metrics are presented....

  11. Silicon-ion-implanted PMMA with nanostructured ultrathin layers for plastic electronics

    Science.gov (United States)

    Hadjichristov, G. B.; Ivanov, Tz E.; Marinov, Y. G.

    2014-12-01

    Being of interest for plastic electronics, ion-beam produced nanostructure, namely silicon ion (Si+) implanted polymethyl-methacrylate (PMMA) with ultrathin nanostructured dielectric (NSD) top layer and nanocomposite (NC) buried layer, is examined by electric measurements. In the proposed field-effect organic nanomaterial structure produced within the PMMA network by ion implantation with low energy (50 keV) Si+ at the fluence of 3.2 × 1016 cm-2 the gate NSD is ion-nanotracks-modified low-conductive surface layer, and the channel NC consists of carbon nanoclusters. In the studied ion-modified PMMA field-effect configuration, the gate NSD and the buried NC are formed as planar layers both with a thickness of about 80 nm. The NC channel of nano-clustered amorphous carbon (that is an organic semiconductor) provides a huge increase in the electrical conduction of the material in the subsurface region, but also modulates the electric field distribution in the drift region. The field effect via the gate NSD is analyzed. The most important performance parameters, such as the charge carrier field-effect mobility and amplification of this particular type of PMMA- based transconductance device with NC n-type channel and gate NSD top layer, are determined.

  12. Local electronic and geometric structures of silicon atoms implanted in graphite

    International Nuclear Information System (INIS)

    Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao

    2002-01-01

    Low-energy Si + ions were implanted in highly oriented pyrolitic graphite (HOPG) up to 1% of surface atomic concentration, and the local electronic and geometric structures around the silicon atoms were in situ investigated by means of the Si K-edge X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy using linearly polarized synchrotron radiation. The resonance peak appeared at 1839.5 eV in the Si K-edge XANES spectra for Si + -implanted HOPG. This energy is lower than those of the Si 1s→σ * resonance peaks in any other Si-containing materials. The intensity of the resonance peak showed strong polarization dependence, which suggests that the final state orbitals around the implanted Si atoms have π * -like character. It is concluded that the σ-type Si-C bonds produced by the Si + -ion implantation are nearly parallel to the graphite plane, and Si x C phase forms two-dimensionally spread graphite-like layer with sp 2 bonds

  13. Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

    International Nuclear Information System (INIS)

    Jonah, E. O.; Britton, D. T.; Beaucage, P.; Rai, D. K.; Beaucage, G.; Magunje, B.; Ilavsky, J.; Scriba, M. R.; Härting, M.

    2012-01-01

    The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle X-ray scattering, supported by scanning electron microscopy observations. The milled particles with a highly polydisperse size distribution form agglomerates, which in turn cluster to form larger aggregates with a very high degree of aggregation. Smaller nanoparticles with less polydisperse size distribution synthesized by thermal catalytic pyrolysis of silane form small open clusters. The Sauter mean diameters of the primary particles of the two types of nanoparticles were obtained from USAXS particle volume to surface ratio, with values of ∼41 and ∼21 nm obtained for the high energy milled and pyrolysis samples, respectively. Assuming a log-normal distribution of the particles, the geometric standard deviation of the particles was calculated to be ∼1.48 for all the samples, using parameters derived from the unified fit to the USAXS data. The flow properties of the inks and substrate combination lead to quantitative changes in the mean particle separation, with slowly curing systems with good capillary flow resulting in denser networks with smaller aggregates and better contact between particles.

  14. Spatially resolved determination of lattice distortions in silicon nanostructures by means of electron-backscattering diffraction

    International Nuclear Information System (INIS)

    Krause, Michael

    2013-01-01

    In the submitted thesis, a novel combined approach of both focused ion beam (FIB) based target preparation and strain determination using electron backscatter diffraction (EBSD) in semiconductor nanostructures is presented. In the first part, a powerful cross-correlation algorithm for detecting small feature shifts within EBSD patterns and, consequently, determining the strain, is presented. The corresponding strain sensitivity is demonstrated using dynamically simulated diffraction patterns. Furthermore, novel procedures for automated pattern analysis are introduced. Results of systematic studies concerning the influence of ion species, ion energy and dose density on the surface quality of silicon surfaces are presented in the second part. For that matter, the assessment of surface amorphization and rippling is based on high resolution microstructural diagnostics (TEM, AFM, Raman) and molecular dynamics simulation. The high application potential of combined FIB preparation and strain analysis using EBSD is exemplarily demonstrated for a 60 nm thick sSOI-sample. The good agreement with established techniques like Raman spectroscopy and X-ray diffraction is also shown.

  15. Compton scattering artifacts in electron excited X-ray spectra measured with a silicon drift detector.

    Science.gov (United States)

    Ritchie, Nicholas W M; Newbury, Dale E; Lindstrom, Abigail P

    2011-12-01

    Artifacts are the nemesis of trace element analysis in electron-excited energy dispersive X-ray spectrometry. Peaks that result from nonideal behavior in the detector or sample can fool even an experienced microanalyst into believing that they have trace amounts of an element that is not present. Many artifacts, such as the Si escape peak, absorption edges, and coincidence peaks, can be traced to the detector. Others, such as secondary fluorescence peaks and scatter peaks, can be traced to the sample. We have identified a new sample-dependent artifact that we attribute to Compton scattering of energetic X-rays generated in a small feature and subsequently scattered from a low atomic number matrix. It seems likely that this artifact has not previously been reported because it only occurs under specific conditions and represents a relatively small signal. However, with the advent of silicon drift detectors and their utility for trace element analysis, we anticipate that more people will observe it and possibly misidentify it. Though small, the artifact is not inconsequential. Under some conditions, it is possible to mistakenly identify the Compton scatter artifact as approximately 1% of an element that is not present.

  16. Mesoscopic chaos mediated by Drude electron-hole plasma in silicon optomechanical oscillators

    Science.gov (United States)

    Wu, Jiagui; Huang, Shu-Wei; Huang, Yongjun; Zhou, Hao; Yang, Jinghui; Liu, Jia-Ming; Yu, Mingbin; Lo, Guoqiang; Kwong, Dim-Lee; Duan, Shukai; Wei Wong, Chee

    2017-01-01

    Chaos has revolutionized the field of nonlinear science and stimulated foundational studies from neural networks, extreme event statistics, to physics of electron transport. Recent studies in cavity optomechanics provide a new platform to uncover quintessential architectures of chaos generation and the underlying physics. Here, we report the generation of dynamical chaos in silicon-based monolithic optomechanical oscillators, enabled by the strong and coupled nonlinearities of two-photon absorption induced Drude electron–hole plasma. Deterministic chaotic oscillation is achieved, and statistical and entropic characterization quantifies the chaos complexity at 60 fJ intracavity energies. The correlation dimension D2 is determined at 1.67 for the chaotic attractor, along with a maximal Lyapunov exponent rate of about 2.94 times the fundamental optomechanical oscillation for fast adjacent trajectory divergence. Nonlinear dynamical maps demonstrate the subharmonics, bifurcations and stable regimes, along with distinct transitional routes into chaos. This provides a CMOS-compatible and scalable architecture for understanding complex dynamics on the mesoscopic scale. PMID:28598426

  17. The characterization of high quality multicrystalline silicon by the electron beam induced current method

    International Nuclear Information System (INIS)

    Chen, J; Sekiguchi, T; Nara, S; Yang, D

    2004-01-01

    Multicrystalline silicon (mc-Si) manufactured by a multi-stage solidification control casting method has been characterized by the electron beam induced current (EBIC) method. The average diffusion length of the ingot was over 250 μm, which was much longer than that of conventional mc-Si. The EBIC study revealed that the electrical activities of grain boundaries (GBs) varied with the ingot position due to the impurity contamination level. The main impurity detected was iron. The concentration of iron in the central position was much lower than that at the bottom and top positions. GBs in the central position showed no significant EBIC contrast at 300 K, suggesting low contamination level. GBs in the top and bottom positions, however, showed strong EBIC contrast at 300 K, suggesting high contamination level. At 100 K, a denuded zone with bright contrast developed around GBs in the top and bottom positions. The existence of the denuded zone suggested that impurities were gettered at the GBs. It was considered that the variation of the diffusion length in the ingot was related to the variation of recombination activities of GBs in the different positions, which mainly depended on the impurity contamination

  18. Design and simulation of a novel GaN based resonant tunneling high electron mobility transistor on a silicon substrate

    International Nuclear Information System (INIS)

    Chowdhury, Subhra; Biswas, Dhrubes; Chattaraj, Swarnabha

    2015-01-01

    For the first time, we have introduced a novel GaN based resonant tunneling high electron mobility transistor (RTHEMT) on a silicon substrate. A monolithically integrated GaN based inverted high electron mobility transistor (HEMT) and a resonant tunneling diode (RTD) are designed and simulated using the ATLAS simulator and MATLAB in this study. The 10% Al composition in the barrier layer of the GaN based RTD structure provides a peak-to-valley current ratio of 2.66 which controls the GaN based HEMT performance. Thus the results indicate an improvement in the current–voltage characteristics of the RTHEMT by controlling the gate voltage in this structure. The introduction of silicon as a substrate is a unique step taken by us for this type of RTHEMT structure. (paper)

  19. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

    Science.gov (United States)

    Tankasala, Archana; Salfi, Joseph; Bocquel, Juanita; Voisin, Benoit; Usman, Muhammad; Klimeck, Gerhard; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.; Rogge, Sven; Rahman, Rajib

    2018-05-01

    Two-electron states bound to donors in silicon are important for both two-qubit gates and spin readout. We present a full configuration interaction technique in the atomistic tight-binding basis to capture multielectron exchange and correlation effects taking into account the full band structure of silicon and the atomic-scale granularity of a nanoscale device. Excited s -like states of A1 symmetry are found to strongly influence the charging energy of a negative donor center. We apply the technique on subsurface dopants subjected to gate electric fields and show that bound triplet states appear in the spectrum as a result of decreased charging energy. The exchange energy, obtained for the two-electron states in various confinement regimes, may enable engineering electrical control of spins in donor-dot hybrid qubits.

  20. Polarized photons from a silicon crystal in a 31 GeV electron beam at the Serpukhov proton accelerator

    International Nuclear Information System (INIS)

    Frolov, A.M.; Maisheev, V.A.; Arakelyan, E.A.; Armaganyan, A.A.; Avakyan, R.O.; Bayatyan, G.L.; Grigoryan, N.K.; Kechechyan, A.O.; Knyazyan, S.G.; Margaryan, A.T.

    1980-01-01

    Tagged photons coherently emitted in a silicon crystal by the 31 GeV electron beam of intensity 4 x 10 4 ppp and beam pulse duration of up to 1.7 s have been obtained at the Serpukhov proton accelerator. The photon intensities were I approx. 10 -1 - 10 -2 γ/e - in five almost equal energy bins within the total range k = (8.2-24.2) GeV. The calculated linear polarizations were P approx. 50-20%, respectively. Narrow peaks in the radiation intensity were observed when varying the orientation of a silicon crystal which could not be explained. The method for the experimental alignment of a crystal in electron beams at the proton accelerator has been described. (orig.)

  1. Influence of the parameters of pulsed electron irradiation on the efficiency of formation of defects in silicon

    International Nuclear Information System (INIS)

    Abdusattarov, A.G.; Emtsev, V.V.; Mashovets, T.V.

    1989-01-01

    There is as yet no agreement about the mechanism of the influence of the rate of irradiation on the rate of radiation-defect formation in semiconductors. In the case of silicon some authors attribute this mechanism to the influence of excitation of the electron subsystem on the processes resulting in the formation of secondary defects. Other authors are of the opinion that the rate of excitation of the electron subsystem influences the ratio of the probabilities of separation and annihilation of components of a Frenkel pair. A more careful analysis of this situation however forces are to revise this point of view. The authors consider in greater detail the process of homogeneous annihilation of the components of a Frenkel pair in silicon

  2. Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

    CERN Document Server

    Gentile, C A; Hartfield, J W; Hawryluk, R J; Hegeler, F; Heitzenroeder, P J; Jun, C H; Ku, L P; Lamarche, P H; Myers, M C; Parker, J J; Parsells, R F; Payen, M; Raftopoulos, S; Sethian, J D

    2002-01-01

    The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W centre dot cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated w...

  3. Control and data acquisition electronics for the CDF Silicon Vertex Detector

    Energy Technology Data Exchange (ETDEWEB)

    Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1991-11-01

    A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

  4. Control and data acquisition electronics for the CDF silicon vertex detector

    International Nuclear Information System (INIS)

    urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1992-01-01

    This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

  5. Control and data acquisition electronics for the CDF Silicon Vertex Detector

    International Nuclear Information System (INIS)

    Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

    1991-11-01

    A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

  6. Biofilm formation and design features of indwelling silicone rubber tracheoesophageal voice prostheses - An electron microscopical study

    NARCIS (Netherlands)

    Leunisse, C; van Weissenbruch, R; Busscher, HJ; van der Mei, HC; Dijk, F; Albers, FWJ

    2001-01-01

    After total laryngectomy, voice can be restored with a silicone rubber tracheoesophageal voice prosthesis. However, biofilm formation and subsequent deterioration of the silicone material of the prosthesis will limit device life by impairing valve function. To simulate the natural process of biofilm

  7. High-resolution patterning of graphene by screen printing with a silicon stencil for highly flexible printed electronics.

    Science.gov (United States)

    Hyun, Woo Jin; Secor, Ethan B; Hersam, Mark C; Frisbie, C Daniel; Francis, Lorraine F

    2015-01-07

    High-resolution screen printing of pristine graphene is introduced for the rapid fabrication of conductive lines on flexible substrates. Well-defined silicon stencils and viscosity-controlled inks facilitate the preparation of high-quality graphene patterns as narrow as 40 μm. This strategy provides an efficient method to produce highly flexible graphene electrodes for printed electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Complex nano-patterning of structural, optical, electrical and electron emission properties of amorphous silicon thin films by scanning probe

    Czech Academy of Sciences Publication Activity Database

    Fait, Jan; Čermák, Jan; Stuchlík, Jiří; Rezek, Bohuslav

    2018-01-01

    Roč. 428, Jan (2018), s. 1159-1165 ISSN 0169-4332 R&D Projects: GA ČR GA15-01809S Institutional support: RVO:68378271 Keywords : amorphous silicon * nano-templates * nanostructures * electrical conductivity * electron emission * atomic force microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.387, year: 2016

  9. Alkali-developable silicone-based negative photoresist (SNP) for deep UV, electron beam, and X-ray lithographies

    International Nuclear Information System (INIS)

    Ban, Hiroshi; Tanaka, Akinobu; Kawai, Yoshio; Deguchi, Kimiyoshi

    1989-01-01

    A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP composed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and X-ray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that of conventional novolac resists. (author)

  10. Silicon diodes as an alternative to diamond detectors for depth dose curves and profile measurements of photon and electron radiation

    International Nuclear Information System (INIS)

    Scherf, Christian; Moog, Jussi; Licher, Joerg; Kara, Eugen; Roedel, Claus; Ramm, Ulla; Peter, Christiane; Zink, Klemens

    2009-01-01

    Background: Depth dose curves and lateral dose profiles should correspond to relative dose to water in any measured point, what can be more or less satisfied with different detectors. Diamond as detector material has similar dosimetric properties like water. Silicon diodes and ionization chambers are also commonly used to acquire dose profiles. Material and Methods: The authors compared dose profiles measured in an MP3 water phantom with a diamond detector 60003, unshielded and shielded silicon diodes 60008 and 60012 and a 0.125-cm 3 thimble chamber 233642 (PTW, Freiburg, Germany) for 6- and 25-MV photons. Electron beams of 6, 12 and 18 MeV were investigated with the diamond detector, the unshielded diode and a Markus chamber 23343. Results: The unshielded diode revealed relative dose differences at the water surface below +10% for 6-MV and +4% for 25-MV photons compared to the diamond data. These values decreased to less than 1% within the first millimeters of water depth. The shielded diode was only required to obtain correct data of the fall-off zones for photon beams larger than 10 x 10 cm 2 because of important contributions of low-energy scattered photons. For electron radiation the largest relative dose difference of -2% was observed with the unshielded silicon diode for 6 MeV within the build-up zone. Spatial resolutions were always best with the small voluminous silicon diodes. Conclusion: Relative dose profiles obtained with the two silicon diodes have the same degree of accuracy as with the diamond detector. (orig.)

  11. Effects of nuclear radiation on a high-reliability silicon power diode. 4: Analysis of reverse bias characteristics

    Science.gov (United States)

    Been, J. F.

    1973-01-01

    The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.

  12. Hierarchical modeling of heat transfer in silicon-based electronic devices

    Science.gov (United States)

    Goicochea Pineda, Javier V.

    In this work a methodology for the hierarchical modeling of heat transfer in silicon-based electronic devices is presented. The methodology includes three steps to integrate the different scales involved in the thermal analysis of these devices. The steps correspond to: (i) the estimation of input parameters and thermal properties required to solve the Boltzmann transport equation (BTE) for phonons by means of molecular dynamics (MD) simulations, (ii) the quantum correction of some of the properties estimated with MD to make them suitable for BTE and (iii) the numerical solution of the BTE using the lattice Boltzmann method (LBM) under the single mode relaxation time approximation subject to different initial and boundary conditions, including non-linear dispersion relations and different polarizations in the [100] direction. Each step of the methodology is validated with numerical, analytical or experimental reported data. In the first step of the methodology, properties such as, phonon relaxation times, dispersion relations, group and phase velocities and specific heat are obtained with MD at of 300 and 1000 K (i.e. molecular temperatures). The estimation of the properties considers the anhamonic nature of the potential energy function, including the thermal expansion of the crystal. Both effects are found to modify the dispersion relations with temperature. The behavior of the phonon relaxation times for each mode (i.e. longitudinal and transverse, acoustic and optical phonons) is identified using power functions. The exponents of the acoustic modes are agree with those predicted theoretically perturbation theory at high temperatures, while those for the optical modes are higher. All properties estimated with MD are validated with values for the thermal conductivity obtained from the Green-Kubo method. It is found that the relative contribution of acoustic modes to the overall thermal conductivity is approximately 90% at both temperatures. In the second step

  13. Electronic and Optical Properties of Small Hydrogenated Silicon Quantum Dots Using Time-Dependent Density Functional Theory

    Directory of Open Access Journals (Sweden)

    Muhammad Mus-’ab Anas

    2015-01-01

    Full Text Available This paper presents a systematic study of the absorption spectrum of various sizes of small hydrogenated silicon quantum dots of quasi-spherical symmetry using the time-dependent density functional theory (TDDFT. In this study, real-time and real-space implementation of TDDFT involving full propagation of the time-dependent Kohn-Sham equations were used. The experimental results for SiH4 and Si5H12 showed good agreement with other earlier calculations and experimental data. Then these calculations were extended to study larger hydrogenated silicon quantum dots with diameter up to 1.6 nm. It was found that, for small quantum dots, the absorption spectrum is atomic-like while, for relatively larger (1.6 nm structure, it shows bulk-like behavior with continuous plateau with noticeable peak. This paper also studied the absorption coefficient of silicon quantum dots as a function of their size. Precisely, the dependence of dot size on the absorption threshold is elucidated. It was found that the silicon quantum dots exhibit direct transition of electron from HOMO to LUMO states; hence this theoretical contribution can be very valuable in discerning the microscopic processes for the future realization of optoelectronic devices.

  14. reliability reliability

    African Journals Online (AJOL)

    eobe

    Corresponding author, Tel: +234-703. RELIABILITY .... V , , given by the code of practice. However, checks must .... an optimization procedure over the failure domain F corresponding .... of Concrete Members based on Utility Theory,. Technical ...

  15. Electronic structure of BN-aromatics: Choice of reliable computational tools

    Science.gov (United States)

    Mazière, Audrey; Chrostowska, Anna; Darrigan, Clovis; Dargelos, Alain; Graciaa, Alain; Chermette, Henry

    2017-10-01

    The importance of having reliable calculation tools to interpret and predict the electronic properties of BN-aromatics is directly linked to the growing interest for these very promising new systems in the field of materials science, biomedical research, or energy sustainability. Ionization energy (IE) is one of the most important parameters to approach the electronic structure of molecules. It can be theoretically estimated, but in order to evaluate their persistence and propose the most reliable tools for the evaluation of different electronic properties of existent or only imagined BN-containing compounds, we took as reference experimental values of ionization energies provided by ultra-violet photoelectron spectroscopy (UV-PES) in gas phase—the only technique giving access to the energy levels of filled molecular orbitals. Thus, a set of 21 aromatic molecules containing B-N bonds and B-N-B patterns has been merged for a comparison between experimental IEs obtained by UV-PES and various theoretical approaches for their estimation. Time-Dependent Density Functional Theory (TD-DFT) methods using B3LYP and long-range corrected CAM-B3LYP functionals are used, combined with the Δ SCF approach, and compared with electron propagator theory such as outer valence Green's function (OVGF, P3) and symmetry adapted cluster-configuration interaction ab initio methods. Direct Kohn-Sham estimation and "corrected" Kohn-Sham estimation are also given. The deviation between experimental and theoretical values is computed for each molecule, and a statistical study is performed over the average and the root mean square for the whole set and sub-sets of molecules. It is shown that (i) Δ SCF+TDDFT(CAM-B3LYP), OVGF, and P3 are the most efficient way for a good agreement with UV-PES values, (ii) a CAM-B3LYP range-separated hybrid functional is significantly better than B3LYP for the purpose, especially for extended conjugated systems, and (iii) the "corrected" Kohn-Sham result is a

  16. Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation

    Science.gov (United States)

    Inoue, Naohisa; Kawamura, Yuichi

    2018-05-01

    The interaction of nitrogen and intrinsic point defects, vacancy (V) and self-interstitial (I), was examined by infrared absorption spectroscopy on the electron irradiated and post-annealed nitrogen doped float zone (FZ) silicon crystal. Various absorption lines were observed, at 551 cm-1 in as-grown samples, at 726 and 778 cm-1 in as-irradiated samples (Ir group), at 689 cm-1 after post-annealing at 400 °C and above (400 °C group), at 762 and 951 cm-1 after annealing at 600 °C (600 °C group), and at 714 cm-1 up to 800 °C (800 °C group). By irradiation, a part of N2 was changed into the Ir group. VN2 is the candidate for the origin of the Ir group. By the post annealing at 400 and 600 °C, a part of N2 and the Ir group were changed into the 400 °C group, to less extent at 600 °C. V2N2 is the candidate for the origin of the 400 °C group. By annealing at 600 °C, most of the Ir group turned into 400 °C and 600 °C groups. By annealing at 800 °C, N2 recovered almost completely, and most other complexes were not observed. Recently, lifetime degradation has been observed in the nitrogen doped FZ Si annealed at between 450 and 800 °C. The N-V interaction in the same temperature range revealed here will help to understand the lifetime degradation mechanism. The behavior of the 689 cm-1 line corresponded well to the lifetime degradation.

  17. Electronic properties and morphology of copper oxide/n-type silicon heterostructures

    Science.gov (United States)

    Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

    2017-08-01

    Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

  18. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

    Science.gov (United States)

    Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

    2018-04-01

    This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

  19. Doping in silicon nanocrystals: An ab initio study of the structural, electronic and optical properties

    International Nuclear Information System (INIS)

    Iori, Federico; Degoli, Elena; Luppi, Eleonora; Magri, Rita; Marri, Ivan; Cantele, G.; Ninno, D.; Trani, F.; Ossicini, Stefano

    2006-01-01

    There are experimental evidences that doping control at the nanoscale can significantly modify the optical properties with respect to the pure systems. This is the case of silicon nanocrystals (Si-nc), for which it has been shown that the photoluminescence (PL) peak can be tuned also below the bulk Si band gap by properly controlling the impurities, for example by boron (B) and phosphorus (P) codoping. In this work, we report on an ab initio study of impurity states in Si-nc. We consider B and P substitutional impurities for Si-nc with a diameter up to 2.2 nm. Formation energies (FEs), electronic, optical and structural properties have been determined as a function of the cluster dimension. For both B-doped and P-doped Si-nc the FE increases on decreasing the dimension, showing that the substitutional doping gets progressively more difficult for the smaller nanocrystals. Moreover, subsurface impurity positions result to be the most stable ones. The codoping reduces the FE strongly favoring this process with respect to the simple n-doping or p-doping. Such an effect can be attributed to charge compensation between the donor and the acceptor atoms. Moreover, smaller structural deformations, with respect to n-doped and p-doped cases, localized only around the impurity sites are observed. The band gap and the optical threshold are largely reduced with respect to the undoped Si-nc showing the possibility of an impurity-based engineering of the Si-nc PL properties

  20. Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

    CSIR Research Space (South Africa)

    Jonah, EO

    2012-10-01

    Full Text Available The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle...

  1. Silicon-Germanium Front-End Electronics for Space-Based Radar Applications

    Data.gov (United States)

    National Aeronautics and Space Administration — Over the past two decades, Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology has emerged as a strong platform for high-frequency...

  2. Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

    Czech Academy of Sciences Publication Activity Database

    Healy, N.; Mailis, S.; Bulgakova, Nadezhda M.; Sazio, P.J.A.; Day, T.D.; Sparks, J.R.; Cheng, H.Y.; Badding, J.V.; Peacock, A.C.

    2014-01-01

    Roč. 13, č. 12 (2014), s. 1122-1127 ISSN 1476-1122 Institutional support: RVO:68378271 Keywords : strained silicon * modulation * generation Subject RIV: BH - Optics, Masers, Lasers Impact factor: 36.503, year: 2014

  3. Economic assessment of possible electron accelerator applications in curing silicon rubber based electric installation material

    International Nuclear Information System (INIS)

    Rmot, L.

    1976-01-01

    A description is given of the conventional technology of production of conductors with silicon rubber insulation and of the radiation vulcanization method, i.e., the radiation cross-linking of silicon rubber. An economic comparison is shown for both technologies. The analysis shows that the indices for the radiation cross-linking technology are favourable and that the introduction thereof would be advantageous. (J.P.)

  4. Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices

    International Nuclear Information System (INIS)

    Roca i Cabarrocas, P; Nguyen-Tran, Th; Djeridane, Y; Abramov, A; Johnson, E; Patriarche, G

    2007-01-01

    The synthesis of silicon nanocrystals in standard radio-frequency glow discharge systems is studied with respect to two main objectives: (i) the production of devices based on quantum size effects associated with the small dimensions of silicon nanocrystals and (ii) the synthesis of polymorphous and polycrystalline silicon films in which silicon nanocrystals are the elementary building blocks. In particular we discuss results on the mechanisms of nanocrystal formation and their transport towards the substrate. We found that silicon nanocrystals can contribute to a significant fraction of deposition (50-70%) and that they can be positively charged. This has a strong influence on their deposition because positively charged nanocrystals will be accelerated towards the substrate with energy of the order of the plasma potential. However, the important parameter with respect to the deposition of charged nanocrystals is not the accelerating voltage but the energy per atom and thus a doubling of the diameter will result in a decrease in the energy per atom by a factor of 8. To leverage this geometrical advantage we propose the use of more electronegative gases, which may have a strong effect on the size and charge distribution of the nanocrystals. This is illustrated in the case of deposition from silicon tetrafluoride plasmas in which we observe low-frequency plasma fluctuations, associated with successive generations of nanocrystals. The contribution of larger nanocrystals to deposition results in a lower energy per deposited atom and thus polycrystalline films

  5. Engineering in-plane silicon nanowire springs for highly stretchable electronics

    Science.gov (United States)

    Xue, Zhaoguo; Dong, Taige; Zhu, Zhimin; Zhao, Yaolong; Sun, Ying; Yu, Linwei

    2018-01-01

    Crystalline silicon (c-Si) is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional (1D) geometry, or the line-shape, of Si nanowire (SiNW) can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquid-solid (IPSLS) mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited. Project supported by the National Basic Research 973 Program (No. 2014CB921101), the National Natural Science Foundation of China (No. 61674075), the National Key Research and Development Program of China (No. 2017YFA0205003), the Jiangsu Excellent Young Scholar Program (No. BK20160020), the Scientific and Technological Support Program in Jiangsu Province (No. BE

  6. Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

    International Nuclear Information System (INIS)

    Hashmi, S M; Ahmed, S

    2013-01-01

    Design, simulation, fabrication and post-process qualification of substrate-engineered Thin Film Transistors (TFTs) are carried out to suggest an alternate manufacturing process step focused on display sensors and large area electronics applications. Damage created by ion implantation of Helium and Silicon ions into single-crystalline n-type silicon substrate provides an alternate route to create an amorphized region responsible for the fabrication of TFT structures with controllable and application-specific output parameters. The post-process qualification of starting material and full-cycle devices using Rutherford Backscattering Spectrometry (RBS) and Proton or Particle induced X-ray Emission (PIXE) techniques also provide an insight to optimize the process protocols as well as their applicability in the manufacturing cycle

  7. Optical and electronic properties of HWCVD and PECVD silicon films irradiated using excimer and Nd:Yag lasers

    International Nuclear Information System (INIS)

    Shaikh, M.Z.; O'Neill, K.A.; Anthony, S.; Persheyev, S.K.; Rose, M.J.

    2006-01-01

    Thin silicon film samples were deposited using HWCVD and PECVD techniques to study the influence of laser annealing on their optical and electronic properties. Samples were annealed in air using a XeCl excimer and Nd:Yag lasers. Excimer laser annealing (ELA) at 50 to 222 mJ/cm 2 increased conductivity in PECVD films by 2 to 3 orders of magnitude and in HWCVD films by 1 to 2 orders of magnitude. ELA was also seen to decrease the optical gap in PECVD films by 0.5 eV and HWCVD films by 0.15 eV. Silicon-oxygen bond content was higher in as-deposited HWCVD films than PECVD films. Hydrogen content (at.%) in PECVD films was higher than HWCVD for higher H dilution ratios. A Nd:Yag laser 3-beam interference pattern was used to produce a periodic array of crystals in both PECVD and HWCVD films

  8. Electron spin resonance investigaton of semiconductor materials for application in thin-film silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Lihong

    2012-07-01

    In the present work, hydrogenated silicon and its alloys silicon carbide and silicon oxide have been investigated using electron spin resonance (ESR). The microstructure of these materials ranges from highly crystalline to amorphous. The correlation between the paramagnetic defects, microstructure, optical and electrical properties has been discussed. Correspondingly, these properties were characterized by the spin density (N{sub S}), g-value and the lineshape of ESR spectra, Infrared (I{sup IR}{sub C}) and/or Raman crystallinity (I{sup RS}{sub C}) as well as optical absorption and electrical dark conductivity ({sigma}{sub D}). 1. As the light absorber, Si layers essentially should have low defect density and good stability against light exposure. The spin density (N{sub S}) measured by ESR is often used as a measure for the paramagnetic defect density (N{sub D}) in the material. However, ESR sample preparation procedures can potentially cause discrepancy between N{sub S} and N{sub D}. Using Mo-foil, Al-foil and ZnO:Al-covered glass as sacrificial substrates, {mu}c-Si:H and a-Si:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD), and ESR powder samples have been prepared with corresponding procedures. Possible preparation-related metastability and instability effects have been investigated in terms of substrate dependence, HCl-etching and atmosphere exposure. A sequence of 'preparation - annealing - air-exposure - annealing' has been designed to investigate the metastability and instability effects. N{sub S} after post-preparation air exposure is higher than in the annealed states, especially for the highly crystalline {mu}c-Si:H material the discrepancy reached one order of magnitude. Low temperature ESR measurements at 40 K indicated that atmospheric exposure leads to a redistribution of the defect states which in turn influence the evaluated N{sub S}. In annealed conditions the samples tend to have lower N{sub S} presumably due

  9. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

    Science.gov (United States)

    Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

    2002-07-01

    We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

  10. Reprint of: Atmospheric scanning electron microscope observes cells and tissues in open medium through silicon nitride film.

    Science.gov (United States)

    Nishiyama, Hidetoshi; Suga, Mitsuo; Ogura, Toshihiko; Maruyama, Yuusuke; Koizumi, Mitsuru; Mio, Kazuhiro; Kitamura, Shinichi; Sato, Chikara

    2010-11-01

    Direct observation of subcellular structures and their characterization is essential for understanding their physiological functions. To observe them in open environment, we have developed an inverted scanning electron microscope with a detachable, open-culture dish, capable of 8 nm resolution, and combined with a fluorescence microscope quasi-simultaneously observing the same area from the top. For scanning electron microscopy from the bottom, a silicon nitride film window in the base of the dish maintains a vacuum between electron gun and open sample dish while allowing electrons to pass through. Electrons are backscattered from the sample and captured by a detector under the dish. Cells cultured on the open dish can be externally manipulated under optical microscopy, fixed, and observed using scanning electron microscopy. Once fine structures have been revealed by scanning electron microscopy, their component proteins may be identified by comparison with separately prepared fluorescence-labeled optical microscopic images of the candidate proteins, with their heavy-metal-labeled or stained ASEM images. Furthermore, cell nuclei in a tissue block stained with platinum-blue were successfully observed without thin-sectioning, which suggests the applicability of this inverted scanning electron microscope to cancer diagnosis. This microscope visualizes mesoscopic-scale structures, and is also applicable to non-bioscience fields including polymer chemistry. Copyright © 2010 Elsevier Inc. All rights reserved.

  11. Improvement of mechanical reliability by patterned silver/Indium-Tin-Oxide structure for flexible electronic devices

    International Nuclear Information System (INIS)

    Baek, Kyunghyun; Jang, Kyungsoo; Lee, Youn-Jung; Ryu, Kyungyul; Choi, Woojin; Kim, Doyoung; Yi, Junsin

    2013-01-01

    We report the effect of silver (Ag)-buffer layer Indium-Tin-Oxide (ITO) film on a polyethylene terephthalate substrate on the electrical, optical and reliable properties for transparent–flexible displays. The electrical and optical characteristics of an ITO-only film and an Ag-layer-inserted ITO film are measured and compared to assess the applicability of the triple layered structure in flexible displays. The sheet resistance, the resistivity and the light transmittance of the ITO-only film were 400 Ω/sq, 1.33 × 10 −3 Ω-cm and 99.2%, while those of the ITO film inserted with a 10 nm thick Ag layer were 165 Ω/sq, 4.78 × 10 −4 Ω-cm and about 97%, respectively. To evaluate the mechanical reliability of the different ITO films, bending tests were carried out. After the dynamic bending test of 900 cycles, the sheet resistance of the ITO film inserted with the Ag layer changed from 154 Ω/sq to 475 Ω/sq, about a 3-time increase but that of the ITO-only film changed from 400 Ω/sq to 61,986 Ω/sq, about 150-time increase. When the radius is changed from 25 mm to 20 mm in the static bending test, the sheet resistance of the ITO-only film changed from 400 to 678.3 linearly whereas that of the Ag-layer inserted ITO film changed a little from 154.4 to 154.9. These results show that Ag-layer inserted ITO film had better mechanical characteristics than the ITO-only film. - Highlights: ► Transparent flexible electrode fabricated on glass substrate. ► Electrode fabricated using vertically-patterned design on glass substrate. ► Optimization of the vertical patterns ► Application of the vertically-patterned electrode in transparent–flexible electronics

  12. Study of the Adsorption of Atoms and Molecules on Silicon Surfaces: Crystallographics and Electronic Structure

    International Nuclear Information System (INIS)

    Bengio, Silvina

    2003-01-01

    This thesis work has been concerned with adsorption properties of silicon surfaces.The atomic and electronic structure of molecules and atoms adsorbed on Si has been investigated by means of photoemission experiments combined with synchrotron radiation.The quantitative atomic structure determination was held applying the photoelectron diffraction technique.This technique is sensible to the local structure of a reference atomic specie and has elemental and chemical-state specificity.This approach has been applied to three quite different systems with different degrees of complexity, Sb/Si(111) √3x √3R30 0 , H 2 O/Si(100)2x1 and NH 3 /Si(111)7x7.Our results show that Sb which forms a ( √3√3)R30 0 phase produces a bulklike-terminated Si(111)1x1 substrate free of stacking faults.Regarding the atomic structure of its interface, this study strongly favours the T4-site milkstool model over the H3 one.An important aspect regarding the H 2 O/Si(100)(2x1) system was establishing the limits of precision with which one can determine not only the location of the adsorbed hydroxyl (OH) species, but also the extent to which this adsorption modifes the asymmetric dimers of the clean surface to which it is bonded.On the Si(111)(7x7) surface the problem is particularly complex because there are several different potentially active sites for NH3 adsorption and fragmentation.The application of the PhD method, however, has shown that the majority of the N atoms are on so-called 'rest atom' sites when deposited at RT.This is consistent with the N in the NH2 chemical state.This investigation represents the first quantitative structural study of any molecular adsorbate on the complex Si(111)(7x7) surface.This atomic structures determination shows the PhD is a powerful tool for the atomic structure determination.The molecular systems interacting with the active sites of the substrate fragments producing a short-range order surface.This long-range disorder is produced by the

  13. Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

    International Nuclear Information System (INIS)

    Yang Yongliang; Li Xinxin

    2011-01-01

    The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO 2 interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis.

  14. Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

    1978-11-01

    Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

  15. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    International Nuclear Information System (INIS)

    Mashin, A.I.; Khokhlov, A.F.; Mashin, N.I.; Domashevskaya, Eh.P.; Terekhov, V.A.

    2001-01-01

    SiK β and SiL 23 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (α-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL 23 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and α-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK β emission spectrum is observed. This difference of shapes of X-ray spectra between α-Si:H and silicyne is explained by the presence in silicyne a strong π-component of chemical bonds of a silicon atoms in silicyne [ru

  16. X-ray spectroscopy of electronic structure of amorphous silicon and silicyne

    CERN Document Server

    Mashin, A I; Mashin, N I; Domashevskaya, E P; Terekhov, V A

    2001-01-01

    SiK subbeta and SiL sub 2 sub 3 emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (alpha-Si:H) and silicyne have been studied by X-ray and ultrasoft X-ray spectroscopy. It is observed that SiL sub 2 sub 3 emission spectra of silicyne displays not two maximums, as it usually observed for the c-Si and alpha-Si:H, but three ones. The third one is seen at high energies near 95.7 eV, and has an intensity about 75%. An additional maximum in the short- wave part of SiK subbeta emission spectrum is observed. This difference of shapes of X-ray spectra between alpha-Si:H and silicyne is explained by the presence in silicyne a strong pi-component of chemical bonds of a silicon atoms in silicyne

  17. Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

    Science.gov (United States)

    Morishita, Tetsuya

    2009-05-21

    We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

  18. UV lithography-based protein patterning on silicon: Towards the integration of bioactive surfaces and CMOS electronics

    Energy Technology Data Exchange (ETDEWEB)

    Lenci, S., E-mail: silvia.lenci@iet.unipi.it [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Tedeschi, L. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy); Pieri, F. [Dipartimento di Ingegneria dell' Informazione, via G.Caruso 16, Pisa I-56122 (Italy); Domenici, C. [Istituto di Fisiologia Clinica - CNR, via G. Moruzzi 1, Pisa I-56124 (Italy)

    2011-08-01

    A simple and fast methodology for protein patterning on silicon substrates is presented, providing an insight into possible issues related to the interaction between biological and microelectronic technologies. The method makes use of standard photoresist lithography and is oriented towards the implementation of biosensors containing Complementary Metal-Oxide-Semiconductor (CMOS) conditioning circuitry. Silicon surfaces with photoresist patterns were prepared and hydroxylated by means of resist- and CMOS backend-compatible solutions. Subsequent aminosilane deposition and resist lift-off in organic solvents resulted into well-controlled amino-terminated geometries. The discussion is focused on resist- and CMOS-compatibility problems related to the used chemicals. Some samples underwent gold nanoparticle (Au NP) labeling and Scanning Electron Microscopy (SEM) observation, in order to investigate the quality of the silane layer. Antibodies were immobilized on other samples, which were subsequently exposed to a fluorescently labeled antigen. Fluorescence microscopy observation showed that this method provides spatially selective immobilization of protein layers onto APTES-patterned silicon samples, while preserving protein reactivity inside the desired areas and low non-specific adsorption elsewhere. Strong covalent biomolecule binding was achieved, giving stable protein layers, which allows stringent binding conditions and a good binding specificity, really useful for biosensing.

  19. Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

    CERN Document Server

    Mathes, Markus

    2008-01-01

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection ...

  20. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Mathes, Markus

    2008-12-15

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  1. Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

    International Nuclear Information System (INIS)

    Mathes, Markus

    2008-12-01

    Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10 16 particles per cm 2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 μm 2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm 2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm 2 ). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

  2. Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

    CERN Document Server

    Silva, Daniel; Wahl, Ulrich; Martins Correia, Joao; Augustyns, Valerie; De Lemos Lima, Tiago Abel; Granadeiro Costa, Angelo Rafael; David Bosne, Eric; Castro Ribeiro Da Silva, Manuel; Esteves De Araujo, Araujo Joao Pedro; Da Costa Pereira, Lino Miguel

    2016-01-01

    Although the formation of transition metal-boron pairs is currently well established in silicon processing, the geometry of these complexes is still not completely understood. We investigated the lattice location of the transition metals manganese, iron, cobalt and nickel in n- and p+-type silicon by means of electron emission channeling. For manganese, iron and cobalt, we observed an increase of sites near the ideal tetrahedral interstitial position by changing the doping from n- to p+-type Si. Such increase was not observed for Ni. We ascribe this increase to the formation of pairs with boron, driven by Coulomb interactions, since the majority of iron, manganese and cobalt is positively charged in p+-type silicon while Ni is neutral. We propose that breathing mode relaxation around the boron ion within the pair causes the observed displacement from the ideal tetrahedral interstitial site. We discuss the application of the emission channeling technique in this system and, in particular, how it provides insi...

  3. Silicon opto-electronic wavelength tracker based on an asymmetric 2x3 Mach-Zehnder Interferometer

    OpenAIRE

    Doménech Gómez, José David; Sanchez Fandiño, Javier Antonio; Gargallo Jaquotot, Bernardo Andrés; Baños Lopez, Rocio; Muñoz Muñoz, Pascual

    2014-01-01

    In this paper we report on the experimental demonstration of a Silicon-on-Insulator opto-electronic wavelength tracker for the optical telecommunication C-band. The device consist of a 2x3 Mach-Zehnder Interferometer (MZI) with 10 pm resolution and photo-detectors integrated on the same chip. The MZI is built interconnecting two Multimode Interference (MMI) couplers with two waveguides whose length difference is 56 mm. The first MMI has a coupling ratio of 95:05 to com...

  4. Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

    2010-07-01

    Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

  5. Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

    CERN Document Server

    Makarenko, L F; Korshunov, F P; Murin, L I; Moll, M

    2009-01-01

    It has been revealed that self-interstitials formed under low intensity electron irradiationin high resistivity p-type silicon can be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggests that Frenkelpair sinsilicon can be stable at temperatures of about or higher than 100K. A broad DLTS peak with activation energy of 0.14–0.17eV can be identified as related to Frenkel pairs. This peak anneals out at temperatures of 120 140K. Experimental evidences are presented that be coming more mobile under forwardcurrent injection the self-interstitials change their charge state to a less positive one.

  6. Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

    International Nuclear Information System (INIS)

    Kapustinsky, Jon S.

    2010-01-01

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10 o to 35 o to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 μm radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

  7. Production and performance of the silicon sensor and readout electronics for the PHENIX FVTX tracker

    International Nuclear Information System (INIS)

    Kapustinsky, Jon Steven

    2009-01-01

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap is comprised of four silicon disks covering opening angles from 10 to 35 degrees to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 (micro)m radial pitch and proj ective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low power design.

  8. Production and performance of the silicon sensor and custom readout electronics for the PHENIX FVTX tracker

    Energy Technology Data Exchange (ETDEWEB)

    Kapustinsky, Jon S., E-mail: jonk@lanl.go [Los Alamos National Laboratory, Mailstop H846, PO Box 1663, Los Alamos, 87545 New Mexico (United States)

    2010-05-21

    The Forward Silicon Vertex Tracker (FVTX) upgrade for the PHENIX detector at RHIC will extend the vertex capability of the central PHENIX Silicon Vertex Tracker (VTX). The FVTX is designed with adequate spatial resolution to separate decay muons coming from the relatively long-lived heavy quark mesons (Charm and Beauty), from prompt particles and the longer-lived pion and kaon decays that originate at the primary collision vertex. These heavy quarks can be used to probe the high-density medium that is formed in Au+Au collisions at RHIC. The FVTX is designed as two endcaps. Each endcap comprises four silicon disks covering opening angles from 10{sup o} to 35{sup o} to match the existing muon arm acceptance. Each disk consists of p-on-n, silicon wedges, with ac-coupled mini-strips on 75 {mu}m radial pitch and projective length in the phi direction that increases with radius. A custom front-end chip, the FPHX, has been designed for the FVTX. The chip combines fast trigger capability with data push architecture in a low-power design.

  9. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yong, E-mail: liyong@pdsu.edu.cn [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Song, Xiao Yan [Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450045 (China); Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Li, Xin Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2016-02-15

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  10. Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Li, Yong; Song, Xiao Yan; Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun; Li, Xin Jian

    2016-01-01

    Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

  11. Effects of electron irradiation and temperature on 1 ohm-cm and 10 ohm-cm silicon solar cells

    Science.gov (United States)

    Nicoletta, C. A.

    1973-01-01

    One OHM-cm and 10 OHM-cm silicon solar cells were exposed to 1.0 MeV electrons at a fixed flux of 10 to the 11th power e/sq cm/sec and fluences of 10 to the 13th power, 10 to the 14th power and 10 to the 15th power e/sq.cm. 1-V curves of the cells were made at room temperature, - 63 C and + or - 143 C after each irradiation. A value of 139.5 mw/sq cm was used as AMO incident energy rate per unit area. The 10 OHM-cm cells appear more efficient than 1 OHM-cm cells after exposure to a fluence greater than 10 to the 14th power e/sq cm. The 1.0 MeV electron damage coefficients for both 1 OHM-cm and 10 OHM-cm cells are somewhat less than those for previously irradiated cells at room temperature. The values of the damage coefficients increase as the cell temperatures decrease. Efficiencies pertaining to maximum power output are about the same as those of n on p silicon cells evaluated previously.

  12. Displacement damage analysis and modified electrical equivalent circuit for electron and photon-irradiated silicon solar cells

    Science.gov (United States)

    Arjhangmehr, Afshin; Feghhi, Seyed Amir Hossein

    2014-10-01

    Solar modules and arrays are the conventional energy resources of space satellites. Outside the earth's atmosphere, solar panels experience abnormal radiation environments and because of incident particles, photovoltaic (PV) parameters degrade. This article tries to analyze the electrical performance of electron and photon-irradiated mono-crystalline silicon (mono-Si) solar cells. PV cells are irradiated by mono-energetic electrons and poly-energetic photons and immediately characterized after the irradiation. The mean degradation of the maximum power (Pmax) of silicon solar cells is presented and correlated using the displacement damage dose (Dd) methodology. This method simplifies evaluation of cell performance in space radiation environments and produces a single characteristic curve for Pmax degradation. Furthermore, complete analysis of the results revealed that the open-circuit voltage (Voc) and the filling factor of mono-Si cells did not significantly change during the irradiation and were independent of the radiation type and fluence. Moreover, a new technique is developed that adapts the irradiation-induced effects in a single-cell equivalent electrical circuit and adjusts its elements. The "modified circuit" is capable of modeling the "radiation damage" in the electrical behavior of mono-Si solar cells and simplifies the designing of the compensation circuits.

  13. Cosmic ray antiproton/electron discrimination capability of the CAPRICE silicon-tungsten calorimeter using neural networks

    International Nuclear Information System (INIS)

    Bellotti, R.; Boezio, M.; Castellano, M.; De Marzo, C.; Picozza, P.; Prigiobbe, V.; Sparvoli, R.; Tirocchi, M.

    1996-01-01

    A data analysis based on an artificial neural network classifier is proposed to identify cosmic ray antiprotons detected with the CAPRICE silicon-tungsten imaging calorimeter against electron background in the energy range 1.2-4.0 GeV. A set of new physical variables, describing the events inside the calorimeter on the base of their different patterns, are introduced in order to discriminate between hadronic and electromagnetic showers. The ability of the artificial neural network classifier to perform a careful multidimensional analysis gives the possibility to identify antiprotons with an electron rejection 408±85 (stat) at 95.0±0.2 (stat)% of signal detection efficiency. The high accuracy achieved by this method improves substantially the efficiency in the evaluation of the cosmic ray antiproton spectrum. (orig.)

  14. Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium.

    Science.gov (United States)

    Shamim, S; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, A

    2014-06-13

    We report experimental evidence of a remarkable spontaneous time-reversal symmetry breaking in two-dimensional electron systems formed by atomically confined doping of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing doping in the Si:P and Ge:P delta layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low doping, providing a microscopic mechanism for spontaneous lifting of the time-reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two-dimensional electrons are confined to narrow half-filled impurity bands.

  15. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

    1992-07-01

    We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

  16. Electronics and mechanics for the Silicon Vertex Detector of the Belle II experiment

    Energy Technology Data Exchange (ETDEWEB)

    Irmler, C; Bergauer, T; Friedl, M; Gfall, I; Valentan, M, E-mail: irmler@hephy.oeaw.ac.a [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2010-12-15

    A major upgrade of the KEK-B factory (Tsukuba, Japan), aiming at a peak luminosity of 8 x 10{sup 35}cm{sup -2}s{sup -1}, which is 40 times the present value, is foreseen until 2014. Consequently an upgrade of the Belle detector and in particular its Silicon Vertex Detector (SVD) is required. We will introduce the concept and prototypes of the full readout chain of the Belle II SVD. Its APV25 based front-end utilizes the Origami chip-on-sensor concept, while the back-end VME system provides online data processing as well as hit time finding using FPGAs. Furthermore, the design of the double-sided silicon detectors and the mechanics will be discussed.

  17. Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

    Science.gov (United States)

    Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

    2015-05-15

    Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

  18. Locking of electron spin coherence above 20 ms in natural silicon carbide

    Science.gov (United States)

    Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

    2017-04-01

    We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

  19. The spatial resolution of silicon-based electron detectors in beta-autoradiography.

    Science.gov (United States)

    Cabello, Jorge; Wells, Kevin

    2010-03-21

    Thin tissue autoradiography is an imaging modality where ex-vivo tissue sections are placed in direct contact with autoradiographic film. These tissue sections contain a radiolabelled ligand bound to a specific biomolecule under study. This radioligand emits beta - or beta+ particles ionizing silver halide crystals in the film. High spatial resolution autoradiograms are obtained using low energy radioisotopes, such as (3)H where an intrinsic 0.1-1 microm spatial resolution can be achieved. Several digital alternatives have been presented over the past few years to replace conventional film but their spatial resolution has yet to equal film, although silicon-based imaging technologies have demonstrated higher sensitivity compared to conventional film. It will be shown in this work how pixel size is a critical parameter for achieving high spatial resolution for low energy uncollimated beta imaging. In this work we also examine the confounding factors impeding silicon-based technologies with respect to spatial resolution. The study considers charge diffusion in silicon and detector noise, and this is applied to a range of radioisotopes typically used in autoradiography. Finally an optimal detector geometry to obtain the best possible spatial resolution for a specific technology and a specific radioisotope is suggested.

  20. Microstructure-Evolution and Reliability Assessment Tool for Lead-Free Component Insertion in Army Electronics

    Science.gov (United States)

    2008-10-01

    millions of transistors on a silicon chip in addition to many discrete components such as resistors , inductors and capacitors. All these different... resistors [36]. They have defined an Ag3Sn phase growth parameter, S, and have observed that when subjected to periodic thermal loading, the phase growth...moiré interferometry. The process involves moving the whole interferometer parallel to the specimen grating in small increments, using a piezo

  1. Transmission electron microscopy study for investigating high-temperature reliability of Ti10W90-based and Ta-based diffusion barriers up to 600 C

    International Nuclear Information System (INIS)

    Budhiman, Nando; Schuermann, Ulrich; Kienle, Lorenz; Jensen, Bjoern; Chemnitz, Steffen; Wagner, Bernhard

    2016-01-01

    Abstractauthoren Transmission electron microscopy (TEM) analysis, including energy dispersive X-ray (EDX) (elemental mapping, line, and point measurements) and energy filtered TEM (EFTEM) methods, is applied to investigate the high temperature reliability, especially material diffusion, of two types of diffusion barriers: titanium-tungsten-based (Ti 10 W 90 -based) and tantalum-based (Ta-based), with nickel (Ni) layer on top. Both barriers were deposited as a form of stacked layers on sili-con (Si) wafers using the physical vapor deposition (PVD) technique. TEM analysis is performed on both barriers before and after annealing (at 600 C for 24 h inside a vacuum chamber). No diffusion of material into the Si substrate as observed. Additionally, only diffusion between the Ni and adjoining Ti 10 W 90 layers, and between Ni and adjoining Ta layers in the Ti 10 W 90 -based and Ta-based barriers, respectively, are observed due to annealing. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Origin of Si(LMM) Auger Electron Emission from Silicon and Si-Alloys by keV Ar+ Ion Bombardment

    Science.gov (United States)

    Iwami, Motohiro; Kim, Su Chol; Kataoka, Yoshihide; Imura, Takeshi; Hiraki, Akio; Fujimoto, Fuminori

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar+ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  3. Origin of Si(LMM) Auger electron emission from silicon and Si-alloys by keV Ar/sup +/ ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Iwami, M; Kim, S; Kataoka, Y; Imura, T; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering

    1980-09-01

    Si(LMM) Auger electrons emitted from specimens of pure silicon and several Si-alloys (Ni-Si, Pd-Si and Cu-Si) under keV Ar/sup +/ ion bombardment, were examined. In the Auger spectra from all specimens studied there were four peaks at energies of 92, 86, 76 and 66 eV. The Auger signal intensity varied considerably with both the incident angle and the energy of the primary ion beam. It is proposed that the Auger electrons are emitted from silicon atoms (or ions) just beneath the specimen surface but free from the bulk network.

  4. Recombination centers and electrical characteristics in silicon power p-i-n diodes irradiated with high energy electrons

    International Nuclear Information System (INIS)

    Fuochi, P.G.; Martelli, A.; Passerini, B.; Zambelli, M.

    1988-01-01

    Recombination centers introduced by irradiation with 12 MeV electrons in large area silicon diodes with p-i-n structure are studied with the Deep Level Transient Spectroscopy technique (DLTS). The effects of these levels on the electrical characteristics of the devices are related to their position Esub(t) in the silicon forbidden gap, their concentration and their electron capture cross section. Changes of defect configuration during an annealing process at 360 0 C have been observed and a detailed analysis of the DLTS spectra has shown a complex defect pattern. Four major recombination centers have been identified: Esub(c) - Esub(t) = 0.17 eV, Esub(c) - Esub(t) = 0.19 eV, Esub(c) -Esub(t) 0.31 eV, Esub(c) - Esub(t) = 0.39 eV, where Esub(c) is the energy corresponding to the lower limit of the conduction band. The first energy level, known as A-center, is the dominant recombination level controlling the minority carrier lifetime after room temperature irradiation. As the annealing proceeds the center at Esub(c) - Esub(t) = 0.31 eV becomes the dominant one. The complex structure of the centers has been studied and demonstrated with the aid of proper modelling implemented on a set of numerical simulation tools. In this way it has been possible to analyze more accurately the defect kinetics during annealing. The study of the defect behaviour during the annealing process has resulted in an improved application of electron irradiation as a standard production technique in the manufacturing process of high power devices. (author)

  5. Solid-state Memory on Flexible Silicon for Future Electronic Applications

    KAUST Repository

    Ghoneim, Mohamed T.

    2016-01-01

    Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first

  6. Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

  7. Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects

    Science.gov (United States)

    Laux, S. E.; Kumar, A.; Fischetti, M. V.

    2004-05-01

    A two-dimensional device simulation program which self consistently solves the Schrödinger and Poisson equations with current flow is described in detail. Significant approximations adopted in this work are the absence of scattering and a simple six-valley, parabolic band structure for silicon. A modified version of the quantum transmitting boundary method is used to describe open boundary conditions permitting current flow in device solutions far from equilibrium. The continuous energy spectrum of the system is discretized by temporarily imposing two different forms of closed boundary conditions, resulting in energies which sample the density-of-states and establish the wave function normalization conditions. These standing wave solutions ("normal modes") are decomposed into their traveling wave constituents, each of which represents injection from only one of the open boundary contacts ("traveling eigencomponents"). These current-carrying states are occupied by a drifted Fermi distribution associated with their injecting contact and summed to form the electron density in the device. Holes are neglected in this calculation. The Poisson equation is solved on the same finite element computational mesh as the Schrödinger equation; devices of arbitrary geometry can be modeled. Computational performance of the program including characterization of a "Broyden+Newton" algorithm employed in the iteration for self consistency is described. Device results are presented for a narrow silicon resonant tunneling diode (RTD) and many variants of idealized silicon double-gate field effect transistors (DGFETs). The RTD results show two resonant conduction peaks, each of which demonstrates hysteresis. Three 7.5 nm channel length DGFET structures with identical intrinsic device configurations but differing access geometries (straight, taper and "dog bone") are studied and found to have differing current flows owing to quantum-mechanical reflection in their access regions

  8. Numerical study of the atomic and electronic structure of some silicon grain boundaries

    International Nuclear Information System (INIS)

    Torrent, M.

    1996-01-01

    This work contributes to the theoretical study of extended defects in covalent materials. The study is especially devoted to the tilt grain boundaries in silicon as a model material. The theoretical model is based on the self-consistent tight-binding approximation and is applied within two numerical techniques: the fast 'order N' density-matrix method and the diagonalization technique which allows the sampling of the reciprocal space. Total energy parameters of the model have been fitted in order to reproduce the silicon band structure (with a correct gap value) and the transferability of crystalline and mechanical properties of this material. A new type of boundary conditions is proposed and tested. These conditions, named 'ante-periodic' or 'Moebius', allow only one grain boundary per box instead of two and decrease the CPU time by a factor of two. The model is then applied to the study of the Σ=25 [001] (710) grain boundary. The results show the possible presence in this boundary of low energy non-reconstructed atomic structures which are electrically active. This confirms what had been suggested by some experimental observations. The same study is also performed for the Σ=13 [001] (510) grain boundary. In order to compare the intrinsic electrical activity in the previous grain boundaries with the one induced by impurities, a total energy parametrization for the silicon-nickel bond is achieved and used in preliminary calculations. Finally the two variants of the Σ=11 [011] (2-33) interface are studied, especially their respective interfacial energies. The result disagrees with previous calculations using phenomenological potentials. (author)

  9. A programmable electronic Microplex Driver Unit for readout of silicon strip detectors

    International Nuclear Information System (INIS)

    Bairstow, R.

    1990-08-01

    The unit provides the necessary signals to drive arrays of Microplex devices used to readout silicon strip Vertex detectors as used in DELPHI and OPAL at CERN. The unit has a CAMAC interface allowing operation of the unit by computer in a Remote-control mode. The computer can control all the essential parameters of the drive signals, together with the operational characteristics of the system. Alternatively, the unit can be used in a stand-alone Local-control mode. In this case the front panel controls and displays enable the user to set up the unit. (author)

  10. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  11. Humidity Build-Up in a Typical Electronic Enclosure Exposed to Cycling Conditions and Effect on Corrosion Reliability

    DEFF Research Database (Denmark)

    Conseil, Helene; Gudla, Visweswara Chakravarthy; Jellesen, Morten Stendahl

    2016-01-01

    The design of electronic device enclosures plays a major role in determining the humidity build-up inside the device as a response to the varying external humidity. Therefore, the corrosion reliability of electronic devices has direct connection to the enclosure design. This paper describes......, thermal mass, and port/opening size. The effect of the internal humidity build-up on corrosion reliability has been evaluated by measuring the leakage current (LC) on interdigitated test comb patterns, which are precontaminated with sodium chloride and placed inside the enclosure. The results showed...... that the exposure to cycling temperature causes significant change of internal water vapor concentration. The maximum value of humidity reached was a function of the opening size and the presence of thermal mass inside the enclosure. A pumping effect was observed due to cycling temperature, and the increase...

  12. Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

    Science.gov (United States)

    Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

    2014-02-01

    Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

  13. The effect of a new intercity expressway based on travel time reliability using electronic toll collection data

    OpenAIRE

    Yamazaki, H.; Uno, N.; Kurauchi, F.

    2012-01-01

    This study describes a method of evaluating the level of service of road networks, based on the average travel time and travel time reliability using electronic toll collection (ETC) data. The authors focused on the variance in travel time under normal circumstances, thus, traffic accidents were removed from the database, and any effect of individual vehicle preference was excluded. They evaluated the travel time distribution based on the average travel time from ETC data for each 15-min inte...

  14. Reliability and efficiency upgrades of power systems operation by implementing intelligent electronic devices with synchrophasor measurement technology support

    Directory of Open Access Journals (Sweden)

    Mokeev Alexey

    2017-01-01

    Full Text Available This paper reviews issues of reliability and efficiency upgrades of power systems functions by means of a widespread implementation of intelligent electronic devices (IED in various purposes supporting synchrophasor measurement technology. Thus, such issues as IED’s operational analysis in the conditions of electromagnetic and electromechanical transient processes and synthesis of digital filters that improve static and dynamic responses of these devices play an important role in their development.

  15. Reliability and efficiency upgrades of power systems operation by implementing intelligent electronic devices with synchrophasor measurement technology support

    OpenAIRE

    Mokeev Alexey

    2017-01-01

    This paper reviews issues of reliability and efficiency upgrades of power systems functions by means of a widespread implementation of intelligent electronic devices (IED) in various purposes supporting synchrophasor measurement technology. Thus, such issues as IED’s operational analysis in the conditions of electromagnetic and electromechanical transient processes and synthesis of digital filters that improve static and dynamic responses of these devices play an important role in their devel...

  16. An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

    International Nuclear Information System (INIS)

    Elhamri, S.; Berney, R.; Mitchel, W.C.; Mitchell, W.D.; Roberts, J.C.; Rajagopal, P.; Gehrke, T.; Piner, E.L.; Linthicum, K.J.

    2004-01-01

    We present results of transport measurements performed on AlGaN/GaN heterostructures grown on silicon substrates. Variable temperature Hall effect measurements revealed that the temperature dependence of the carrier density and mobility were characteristic of a two-dimensional electron gas (2DEG). Carrier densities greater than 1x10 13 cm -2 and Hall mobilities in excess of 1500 cm2/V s were measured at room temperature. Variable field Hall measurements at low temperatures, and in magnetic fields up to 6 T, indicated that conduction is dominated by a single carrier type in these samples. Shubnikov-de Haas (SdH) measurements were also performed, but no oscillations were observed in fields up to 8 T and at temperatures as low as 1.2 K. Illuminating some of the samples with a blue (λ=470 nm) light emitting diode (LED) induced a persistent increase in the carrier density. SdH measurements were repeated and again no oscillations were present following illumination. However, exposing the samples to radiation from an UV (λ=395 nm) LED induced well-defined SdH oscillations in fields as low as 4 T. The observation of SdH oscillations confirmed the presence of a 2DEG in these structures. It is hypothesized that small angle scattering suppressed the oscillations before exposure to UV light. This conclusion is supported by the observed increase in the quantum scattering time, τ q , with the carrier density and the calculated quantum to transport scattering times ratio, τ q /τ c . For instance, in one of the samples the τ q increased by 32% while the τ c changed by only 3% as the carrier density increased; an indication of an increase in the screening of small angle scattering. The absence of SdH oscillations in fields up to 8 T and at temperatures as low as 1.2 K is not unique to AlGaN/GaN on silicon. This behavior was observed in AlGaN/GaN on sapphire and on silicon carbide. SdH oscillations were observed in one AlGaN/GaN on silicon carbide sample following exposure to

  17. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  18. Miniature silicon electronic biological assay chip and applications for rapid battlefield diagnostics

    Science.gov (United States)

    Cunningham, Brian T.; Regan, Robert A.; Clapp, Christopher; Hildebrant, Eric; Weinberg, Marc S.; Williams, John

    1999-07-01

    Assessing the medical condition of battlefield personnel requires the development of rapid, portable biological diagnostic assays for a wide variety of antigens and enzymes. Ideally, such an assay would be inexpensive, small, and require no added reagents while maintaining the sensitivity and accuracy of laboratory-based assays. In this work, a microelectromechanical (MEMS) based biological assay sensor is presented which is expected to meet the above requirements. The sensor is a thin silicon membrane resonator (SMR) which registers a decrease in resonant frequency when mass is adsorbed onto its surface. By coating the sensor surface with a monolayer of antibody, for example, we have detected the corresponding antigen with a detection resolution of 0.25 ng/ml in phosphate buffer solution. Micromachining techniques are being used to integrate many (64 elements on the first test chip) identical SMR sensors into a single silicon chip which would be capable of simultaneously performing a wide variety of biomedical assays. The sensors require only a small printed circuit board and 8V power supply to operate and provide a readout. The presentation will describe the operation of the SMR sensor, the fabrication of the sensor array, and initial test results using commercially available animal immunoglobulins in laboratory-prepared test solutions.

  19. Ion-induced Auger electron spectroscopy: a new detection method for compositional homogeneities of alloyed atoms in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, A [Osaka Univ., Japan; Imura, T; Iwami, M; Kim, S C; Ushita, K; Okamoto, H; Hamakawa, Y

    1979-09-01

    Auger spectra of Si LMM transitions induced by keV Ar/sup +/ ion bombardment of Si alloy systems have been studied. The spectra observed are composed of two well-defined peaks termed elsewhere the atomic-like and bulk-like peaks, repsectively. A clear correlation has been found between the intensity of the atomic-like peak lying at 88 eV and the content of the foreign atoms alloyed with Si. Experiments were carried out on metallic silicides, or Si alloys with Au, Cu, Pd and Ni, and covalently bonded non-metallic Si alloys of C and H. From these studies, we propose that ion-induced Auger electron spectroscopy might be a useful tool for the determination of alloyed foreign atoms as well as for the study of their compositional homogeneity in binary alloy systems of silicon.

  20. Investigation of quantum states of fast electrons under planar channeling in silicon crystals

    International Nuclear Information System (INIS)

    Gridnev, V.I.; Kaplin, V.V.; Khlabutin, V.G.; Rozum, E.I.; Vorobiev, S.A.

    1987-01-01

    The angular distributions of (1.87 to 5.7) MeV electrons channeled in 2 μm Si crystals along (100), (110), and (111) atomic planes are measured. The half-width of measured angular distributions is defined by a critical Lindhard angle. A relation is obtained connecting those energies of electrons at which their angular distributions are similar for various atomic planes. The effect of a 'critical energy' under planar channeling of electrons is found and investigated. (author)

  1. Calibration of a silicon semiconductor detecter using a 2 MeV electron accelerator beam

    International Nuclear Information System (INIS)

    Fleurot, N.; Gouard, P.; Mazataud, E.; Nail, M.; Savy, C.; Bayer, C.; Cauchois, Y.; Kherouf, R.; Mathieu, D.

    1981-01-01

    This paper describes the current mode calibration, carried out on a 2 MeV electron accelerator, of PIN detectors involved in electron spectrum measurements for laser-matter interaction experiments. A theoretical analysis simulating the interaction between the incident electrons and the irradiated medium has been carried out using the FOTELEC code. It accounts well for the experimental results giving a reasonable value for the mean electron-hole pair formation energy when back-scattering corrections are included. This work provides the transfer function data required for a plasma diagnostic spectrometer. (orig.)

  2. Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

    Science.gov (United States)

    Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

    2018-01-01

    In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

  3. Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

    KAUST Repository

    Bose, Riya

    2018-01-23

    Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

  4. Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

    KAUST Repository

    Bose, Riya; Adhikari, Aniruddha; Burlakov, Victor M; Liu, Guangyu; Haque, Mohammed; Priante, Davide; Hedhili, Mohamed N.; Wehbe, Nimer; Zhao, Chao; Yang, Haoze; Ng, Tien Khee; Goriely, Alain; Bakr, Osman; Wu, Tao; Ooi, Boon S.; Mohammed, Omar F.

    2018-01-01

    Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.

  5. Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

    International Nuclear Information System (INIS)

    Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

    2006-01-01

    Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

  6. Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

    CERN Document Server

    Palviainen, T; Tuuva, T; Eranen, S; Härkönen, J; Luukka, P; Tuovinen, E

    2006-01-01

    The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.

  7. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

  8. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  9. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen

    Science.gov (United States)

    Makarenko, L. F.; Lastovskii, S. B.; Yakushevich, H. S.; Moll, M.; Pintilie, I.

    2018-04-01

    Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.

  10. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    International Nuclear Information System (INIS)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J.; Dyk, E.E. van

    2009-01-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  11. Opto-electronic analysis of silicon solar cells by LBIC investigations and current-voltage characterization

    Energy Technology Data Exchange (ETDEWEB)

    Thantsha, N.M.; Macabebe, E.Q.B.; Vorster, F.J. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Dyk, E.E. van, E-mail: ernest.vandyk@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2009-12-01

    A different laser beam induced current (LBIC) mapping technique has been used for the measurements of spatial variation of light generated current of a solar cell. These variations are caused by parasitic resistances and defects at grain boundaries (GBs) in multicrystalline silicon solar cells (mc-Si). This study investigates and identifies the regions within mc-Si solar cells where dominating recombination and lifetime limiting processes occur. A description of the LBIC technique is presented and the results show how multicrystalline GBs and other defects affect the light generated current of a spot illuminated mc-Si solar cell. The results of the internal quantum efficiency (IQE) at wavelength of 660 nm revealed that some regions in mc-Si solar cell give rise to paths that lead current away from the intended load.

  12. First-principles study on electron transport properties of carbon-silicon mixed chains

    Science.gov (United States)

    Hu, Wei; Zhou, Qinghua; Liang, Yan; Liu, Wenhua; Wang, Tao; Wan, Haiqing

    2018-03-01

    In this paper, the transport properties of carbon-silicon mixed chains are studied by using the first-principles. We studied five atomic chain models. In these studies, we found that the equilibrium conductances of atomic chains appear to oscillate, the maximum conductance and the minimum conductance are more than twice the difference. Their I-V curves are linear and show the behavior of metal resistance, M5 system and M2 system current ratio is the largest in 0.9 V, which is 3.3, showing a good molecular switch behavior. In the case of bias, while the bias voltage increases, the transmission peaks move from the Fermi level. The resonance transmission peak height is reduced near the Fermi level. In the higher energy range, a large resonance transmission peak reappears, there is still no energy cut-off range.

  13. Channeling, volume reflection, and volume capture study of electrons in a bent silicon crystal

    Directory of Open Access Journals (Sweden)

    T. N. Wistisen

    2016-07-01

    Full Text Available We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111 plane in a strongly bent quasimosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5, and 14.0 GeV with a crystal with bending radius of 0.15 m, corresponding to curvatures of 0.053, 0.066, 0.099, 0.16, and 0.22 times the critical curvature, respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission, and the widths of the distribution of channeled particles parallel and orthogonal to the plane.

  14. Two- to three-dimensional crossover in a dense electron liquid in silicon

    Science.gov (United States)

    Matmon, Guy; Ginossar, Eran; Villis, Byron J.; Kölker, Alex; Lim, Tingbin; Solanki, Hari; Schofield, Steven R.; Curson, Neil J.; Li, Juerong; Murdin, Ben N.; Fisher, Andrew J.; Aeppli, Gabriel

    2018-04-01

    Doping of silicon via phosphine exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns=2.8 ×1014 cm-2) disordered two-dimensional array of P atoms, the full field magnitude and angle-dependent magnetotransport is remarkably well described by classic weak localization theory with no corrections due to interaction. The two- to three-dimensional crossover seen upon warming can also be interpreted using scaling concepts developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

  15. Standard Hardware Acquisition and Reliability Program's (SHARP's) efforts in incorporating fiber optic interconnects into standard electronic module (SEM) connectors

    Science.gov (United States)

    Riggs, William R.

    1994-05-01

    SHARP is a Navy wide logistics technology development effort aimed at reducing the acquisition costs, support costs, and risks of military electronic weapon systems while increasing the performance capability, reliability, maintainability, and readiness of these systems. Lower life cycle costs for electronic hardware are achieved through technology transition, standardization, and reliability enhancement to improve system affordability and availability as well as enhancing fleet modernization. Advanced technology is transferred into the fleet through hardware specifications for weapon system building blocks of standard electronic modules, standard power systems, and standard electronic systems. The product lines are all defined with respect to their size, weight, I/O, environmental performance, and operational performance. This method of defining the standard is very conducive to inserting new technologies into systems using the standard hardware. This is the approach taken thus far in inserting photonic technologies into SHARP hardware. All of the efforts have been related to module packaging; i.e. interconnects, component packaging, and module developments. Fiber optic interconnects are discussed in this paper.

  16. Commercial Off-The-Shelf (COTS) Electronics Reliability for Space Applications

    Science.gov (United States)

    Pellish, Jonathan

    2018-01-01

    This presentation describes the accelerating use of Commercial off the Shelf (COTS) parts in space applications. Component reliability and threats in the context of the mission, environment, application, and lifetime. Provides overview of traditional approaches applied to COTS parts in flight applications, and shows challenges and potential paths forward for COTS systems in flight applications it's all about data!

  17. Reliability and microstructure of lead-free solder joints in industrial electronics after accelerated thermal aging

    NARCIS (Netherlands)

    Scaltro, F.; Biglari, M.H.; Kodentsov, A.; Yakovleva, O.; Brom, E.

    2009-01-01

    The reliability of lead-free (LF) solder joints in surface-mounted device components (SMD) has been investigated after thermo-cycle testing. Kirkendall voids have been observed at the interface component/solder together with the formation of fractures. The evolution, the morphology and the elemental

  18. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    Science.gov (United States)

    van Aken, P. A.; Sharp, T. G.; Seifert, F.

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, verified by selected area electron diffraction (SAED), produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters (Si-O bond distances, coordination numbers and Debye-Waller factors). The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R 0.172 nm and N 5) to R 0.167 nm and N 4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of as it changes from for sixfold to for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours that is consistent with the presence of an intermediate structural state with fivefold coordination of Si. The distribution of coordination states can be estimated by

  19. The Internet School of Medicine: use of electronic resources by medical trainees and the reliability of those resources.

    Science.gov (United States)

    Egle, Jonathan P; Smeenge, David M; Kassem, Kamal M; Mittal, Vijay K

    2015-01-01

    Electronic sources of medical information are plentiful, and numerous studies have demonstrated the use of the Internet by patients and the variable reliability of these sources. Studies have investigated neither the use of web-based resources by residents, nor the reliability of the information available on these websites. A web-based survey was distributed to surgical residents in Michigan and third- and fourth-year medical students at an American allopathic and osteopathic medical school and a Caribbean allopathic school regarding their preferred sources of medical information in various situations. A set of 254 queries simulating those faced by medical trainees on rounds, on a written examination, or during patient care was developed. The top 5 electronic resources cited by the trainees were evaluated for their ability to answer these questions accurately, using standard textbooks as the point of reference. The respondents reported a wide variety of overall preferred resources. Most of the 73 responding medical trainees favored textbooks or board review books for prolonged studying, but electronic resources are frequently used for quick studying, clinical decision-making questions, and medication queries. The most commonly used electronic resources were UpToDate, Google, Medscape, Wikipedia, and Epocrates. UpToDate and Epocrates had the highest percentage of correct answers (47%) and Wikipedia had the lowest (26%). Epocrates also had the highest percentage of wrong answers (30%), whereas Google had the lowest percentage (18%). All resources had a significant number of questions that they were unable to answer. Though hardcopy books have not been completely replaced by electronic resources, more than half of medical students and nearly half of residents prefer web-based sources of information. For quick questions and studying, both groups prefer Internet sources. However, the most commonly used electronic resources fail to answer clinical queries more than half

  20. 2.5D direct laser engraving of silicone microfluidic channels for stretchable electronics

    OpenAIRE

    Nagels, Steven; Deferme, Wim

    2017-01-01

    Stretchable and bendable sensors have become increasingly relevant as the technology behind them matures rapidly from lab based to industrially applicable production principles. In a broader sense, stretchable electronics promises to increase the way we are surrounded by and interact with our devices. Electronic circuits will be deployed in environments where we require them to dynamically flex, bend, stretch, compress, twist and - quite possibly - even fold; where they have to demonstrate a ...

  1. Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

    Energy Technology Data Exchange (ETDEWEB)

    Corkish, R.; Altermatt, P.P.; Heiser, G. [Photovoltaics Special Research Centre, University of New South Wales, 2052 Sydney (Australia)

    2001-01-01

    Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

  2. Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

    International Nuclear Information System (INIS)

    Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

    2016-01-01

    The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

  3. STUDIES ON IGBT MODULE TO IMPROVE THE RELIABILITY OF POWER ELECTRONIC SYSTEMS

    DEFF Research Database (Denmark)

    Choi, Uimin

    component level to converter level. It is divided into two main parts: the first part, which consists of Chapters 2 and 3, is reliability studies of the IGBT module regarding thermal stresses and the second part, composed of Chapters 4 and 5, discusses strategies to improve the reliability and availability...... are presented. Then, in Chapter 3, the effect of junction temperature swing duration t△Tj on the lifetime of the transfer molded Intelligent Power IGBT Module is investigated and modeled based on the power cycling test results. In addition, the physics-of-failure analysis results of the tested modules...... are presented. Finally, in Chapters 4 and 5, open-circuit fault detection and fault-tolerant control methods are proposed for two kinds of neutral-point clamped three-level inverters T-type and NPC inverters. One of main contributions in this project is the development of an apparatus and methodology...

  4. Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

    Science.gov (United States)

    Cooper, James A.

    1986-01-01

    A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

  5. Reliability technology principles and practice of failure prevention in electronic systems

    CERN Document Server

    Pascoe, Norman

    2011-01-01

    A unique book that describes the practical processes necessary to achieve failure free equipment performance, for quality and reliability engineers, design, manufacturing process and environmental test engineers. This book studies the essential requirements for successful product life cycle management. It identifies key contributors to failure in product life cycle management and particular emphasis is placed upon the importance of thorough Manufacturing Process Capability reviews for both in-house and outsourced manufacturing strategies. The readers? attention is also drawn to the ma

  6. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor

    Energy Technology Data Exchange (ETDEWEB)

    Curry, M. J. [Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); England, T. D.; Bishop, N. C.; Ten-Eyck, G.; Wendt, J. R.; Pluym, T.; Lilly, M. P.; Carroll, M. S. [Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States); Carr, S. M. [Center for Quantum Information and Control, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Sandia National Laboratories, 1515 Eubank Blvd SE, Albuquerque, New Mexico 87123 (United States)

    2015-05-18

    We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.

  7. Structural evolution of a deformed Σ=9 (122) grain boundary in silicon. A high resolution electron microscopy study

    International Nuclear Information System (INIS)

    Putaux, Jean-Luc

    1991-01-01

    This research thesis addresses the study by high resolution electron microscopy of the evolution of a silicon bi-crystal under deformation at different temperatures. The author notably studied the structural evolution of the boundary as well as that of grains at the vicinity of the boundary. Two observation scales have been used: the evolution of sub-structures of dislocations induced by deformation in grains and in boundary, and the structure of all defects at an atomic scale. After a presentation of experimental tools (the necessary perfect quality of the electronic optics is outlined), the author recalls some descriptive aspects of grain boundaries (geometric network concepts to describe coinciding networks, concepts of delimiting boundaries and of structural unit to describe grain boundary atomic structure), recalls the characteristics of the studied bi-crystal, and the conditions under which it is deformed. He presents the structures of all perfectly coinciding boundaries, describes defects obtained by deformation at the vicinity of the boundary, describes the entry of dissociated dislocations into the boundaries, and discusses the characterization of boundary dislocations (the notion of Burgers vector is put into question again), and the atomic mechanism of displacement of dislocations in boundaries [fr

  8. Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Jingtian, E-mail: jingtian.fang@utdallas.edu; Vandenberghe, William G.; Fu, Bo; Fischetti, Massimo V. [Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2016-01-21

    We present a formalism to treat quantum electronic transport at the nanometer scale based on empirical pseudopotentials. This formalism offers explicit atomistic wavefunctions and an accurate band structure, enabling a detailed study of the characteristics of devices with a nanometer-scale channel and body. Assuming externally applied potentials that change slowly along the electron-transport direction, we invoke the envelope-wavefunction approximation to apply the open boundary conditions and to develop the transport equations. We construct the full-band open boundary conditions (self-energies of device contacts) from the complex band structure of the contacts. We solve the transport equations and present the expressions required to calculate the device characteristics, such as device current and charge density. We apply this formalism to study ballistic transport in a gate-all-around (GAA) silicon nanowire field-effect transistor with a body-size of 0.39 nm, a gate length of 6.52 nm, and an effective oxide thickness of 0.43 nm. Simulation results show that this device exhibits a subthreshold slope (SS) of ∼66 mV/decade and a drain-induced barrier-lowering of ∼2.5 mV/V. Our theoretical calculations predict that low-dimensionality channels in a 3D GAA architecture are able to meet the performance requirements of future devices in terms of SS swing and electrostatic control.

  9. Comparative structural and electronic studies of hydrogen interaction with isolated versus ordered silicon nanoribbons grown on Ag(110)

    International Nuclear Information System (INIS)

    Dávila, M E; Montero, I; Marele, A; Gómez-Rodríguez, J M; De Padova, P; Hennies, F; Pietzsch, A; Shariati, M N; Le Lay, G

    2012-01-01

    We have investigated the geometry and electronic structure of two different types of self-aligned silicon nanoribbons (SiNRs), forming either isolated SiNRs or a self-assembled 5 × 2/5 × 4 grating on an Ag(110) substrate, by scanning tunnelling microscopy and high resolution x-ray photoelectron spectroscopy. At room temperature we further adsorb on these SiNRs either atomic or molecular hydrogen. The hydrogen absorption process and hydrogenation mechanism are similar for isolated or 5 × 2/5 × 4 ordered SiNRs and are not site selective; the main difference arises from the fact that the isolated SiNRs are more easily attacked and destroyed faster. In fact, atomic hydrogen strongly interacts with any Si atoms, modifying their structural and electronic properties, while molecular hydrogen has first to dissociate. Hydrogen finally etches the Si nanoribbons and their complete removal from the Ag(110) surface could eventually be expected. (paper)

  10. Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics.

    Science.gov (United States)

    Puniredd, Sreenivasa Reddy; Jayaraman, Sundaramurthy; Yeong, Sai Hooi; Troadec, Cedric; Srinivasan, M P

    2013-05-02

    Oxide-free Si and Ge surfaces have been passivated and modified with organic molecules by forming covalent bonds between the surfaces and reactive end groups of linear alkanes and aromatic species using single-step deposition in supercritical carbon dioxide (SCCO2). The process is suitable for large-scale manufacturing due to short processing times, simplicity, and high resistance to oxidation. It also allows the formation of monolayers with varying reactive terminal groups, thus enabling formation of nanostructures engineered at the molecular level. Ballistic electron emission microscopy (BEEM) spectra performed on the organic monolayer on oxide-free silicon capped by a thin gold layer reveals for the first time an increase in transmission of the ballistic current through the interface of up to three times compared to a control device, in contrast to similar studies reported in the literature suggestive of oxide-free passivation in SCCO2. The SCCO2 process combined with the preliminary BEEM results opens up new avenues for interface engineering, leading to molecular electronic devices.

  11. Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

    Science.gov (United States)

    Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A.

    2013-04-01

    Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a Σ9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images. Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, therapid acquisition method provides the measurements of atomic displacements with accuracy below 10 pm. Finally, the advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

  12. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

    KAUST Repository

    Shi, Zhiming

    2016-07-12

    Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

  13. Electrical response of electron selective atomic layer deposited TiO2‑x heterocontacts on crystalline silicon substrates

    Science.gov (United States)

    Ahiboz, Doğuşcan; Nasser, Hisham; Aygün, Ezgi; Bek, Alpan; Turan, Raşit

    2018-04-01

    Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2‑x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2‑x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2‑x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2‑x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2‑x was revealed.

  14. Tailoring the Electronic and Magnetic Properties of Two-Dimensional Silicon Carbide Sheets and Ribbons by Fluorination

    KAUST Repository

    Shi, Zhiming; Kutana, Alex; Yu, Guangtao; Chen, Wei; Yakobson, Boris I.; Schwingenschlö gl, Udo; Huang, Xuri

    2016-01-01

    Fluorination has been instrumental for tuning the properties of several two-dimensional (2D) materials, including graphene, h-BN, and MoS2. However, its potential application has not yet been explored in 2D silicon carbide (SiC), a promising material for nanoelectronic devices. We investigate the structural, electronic, and magnetic properties of fully and partially fluorinated 2D SiC sheets and nanoribbons by means of density functional theory combined with cluster expansion calculations. We find that fully fluorinated 2D SiC exhibits chair configurations and a nonmagnetic semiconducting behavior. Fluorination is shown to be an efficient approach for tuning the band gap. Four ground states of partially fluorinated SiC, SiCF2x with x = 0.0625, 0.25, 0.5, 0.75, are obtained by cluster expansion calculations. All of them exhibit nanoroad patterns, with the x = 0.5 structure identified as the most stable one. The x = 0.0625 structure is a nonmagnetic metal, while the other three are all ferromagnetic half-metals, whose properties are not affected by the edge states. We propose an effective approach for modulating the electronic and magnetic behavior of 2D SiC, paving the way to applications of SiC nanostructures in integrated multifunctional and spintronic nanodevices. © 2016 American Chemical Society.

  15. Characterization of light element impurities in ultrathin silicon-on-insulator layers by luminescence activation using electron irradiation

    International Nuclear Information System (INIS)

    Nakagawa-Toyota, Satoko; Tajima, Michio; Hirose, Kazuyuki; Ohshima, Takeshi; Itoh, Hisayoshi

    2009-01-01

    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (author)

  16. Electron-beam induced amorphization of stishovite: Silicon-coordination change observed using Si K-edge extended electron energy-loss fine structure

    International Nuclear Information System (INIS)

    Aken, P.A. van; Sharp, T.G.; Seifert, F.

    1998-01-01

    The analysis of the extended energy-loss fine structure (EXELFS) of the Si K-edge for sixfold-coordinated Si in synthetic stishovite and fourfold-coordinated Si in natural α-quartz is reported by using electron energy-loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM). The stishovite Si K-edge EXELFS spectra were measured as a time-dependent series to document irradiation-induced amorphization. The amorphization was also investigated through the change in Si K- and O K-edge energy-loss near edge structure (ELNES). For α-quartz, in contrast to stishovite, electron irradiation-induced vitrification, produced no detectable changes of the EXELFS. The Si K-edge EXELFS were analysed with the classical extended X-ray absorption fine structure (EXAFS) treatment and compared to ab initio curve-waved multiple-scattering (MS) calculations of EXAFS spectra for stishovite and α-quartz. Highly accurate information on the local atomic environment of the silicon atoms during the irradiation-induced amorphization of stishovite is obtained from the EXELFS structure parameters The mean Si-O bond distance R and mean Si coordination number N changes from R=0.1775 nm and N=6 for stishovite through a disordered intermediate state (R∼0.172 nm and N∼5) to R∼0.167 nm and N∼4.5 for a nearly amorphous state similar to α-quartz (R=0.1609 nm and N=4). During the amorphization process, the Debye-Waller factor (DWF) passes through a maximum value of σ N 2 ∼83.8pm 2 as it changes from σ st 2 =51.8pm 2 for sixfold to σ qu 2 =18.4pm 2 for fourfold coordination of Si. This increase in Debye-Waller factor indicates an increase in mean-square relative displacement (MSRD) between the central silicon atom and its oxygen neighbours. Using the EXELFS data for amorphization, a new method is developed to derive the relative amounts of Si coordinations in high-pressure minerals with mixed coordination. For the radiation-induced amorphization process of

  17. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  18. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

    Science.gov (United States)

    Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

    2014-05-01

    We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

  19. Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

    Energy Technology Data Exchange (ETDEWEB)

    Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

    2016-06-15

    We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

  20. Silicon PIN diode based electron-gamma coincidence detector system for Noble Gases monitoring.

    Science.gov (United States)

    Khrustalev, K; Popov, V Yu; Popov, Yu S

    2017-08-01

    We present a new second generation SiPIN based electron-photon coincidence detector system developed by Lares Ltd. for use in the Noble Gas measurement systems of the International Monitoring System and the On-site Inspection verification regimes of the Comprehensive Nuclear-Test Ban Treaty (CTBT). The SiPIN provide superior energy resolution for electrons. Our work describes the improvements made in the second generation detector cells and the potential use of such detector systems for other applications such as In-Situ Kr-85 measurements for non-proliferation purposes. Copyright © 2017 Elsevier Ltd. All rights reserved.