RA reactor kinetic parameters - Progress report; Kineticki parametri reaktora RA - Izvestaj o napredovanju -

Energy Technology Data Exchange (ETDEWEB)

Petrovic, M; Obradovic, D; Jevtovic, V; Velickovic, Lj [Institute of nuclear sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1965-11-15

The objective of nuclear reactor kinetics study is to analyze the stability of reactor operation in practice. The obtained parameters should define the needed properties of automatic control system relevant for the stability of the designed reactor system. Refining the analytical models is done by using the analysis and interpretation of experimental data. Results of measured the reactor response obtained by using the reactor oscillator ROB-1 are explained by using the space independent model of the zero power reactor, by power reactor model with one feedback circuit, and by a complex model. It was assumed that the perturbations of the system are small and that linearized kinetic equations could be used. Linearized kinetic equation of the reactor system are transformed into the frequency region in order to analyze the measured values directly. The objective of this paper is to measure the RA reactor kinetics parameters, and analyze the stability of reactor operation at power levels high than nominal. Istrazivanja u oblasti kinetike nuklearnih reaktora imaju za cilj da dovedu analizu stabilnosti rada reaktora na nivo 'radne tehnologije'. Dobijeni pararametri treba da specificiraju potrebne karakteristike sistema automatske kontrole za odgovarajucu stabilnost projektovanog reaktorskog sistema. Doterivanjem analitickih modela do takvog nivoa da se zapazeni fenomeni mogu anailitcki predvideti ide preko analize i interpretacije eksperimentalnih podataka. Eksperimentalni rezultati merenja odziva reaktora, izvedeni reaktorskim oscilatorom ROB-1, interpretirani su na osnovu prostorno nezavisnog modela za reaktor nulte snage, modelom reaktora snage sa jednim kolom povratne sprege, kao i kompleksnim modelom. U ovom radu se poslo od toga da su perturbacije parametara sistema male, pa se mogu upotrebiti linearizovane kineticke jednacine. Linearizovane kineticke jednacine reaktorskog sistema transformirane su u frekventno podrucje s ciljem direktne analize mernih rezultata

Chemical dosimetry of the RA reactor at Vinca, Yugoslavia; Hemijska dozimetrija reaktora RA

Energy Technology Data Exchange (ETDEWEB)

Gal, O; Markovic, V; Radak, B [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1969-07-01

The ten-year work on in-pile chemical dosimetry of the Radiation chemistry Department at the Boris Kidric Institute at Vinca is reviewed. As an introduction, the general theory of the dosimetry of two-component radiation field is given and the uses of the derived equations in calorimetry and chemical dosimetry have been discussed. The chemical systems worked out for the in-pile use: solid oxalic acid and their solutions in light and heavy water, are then described and also the procedures of their use. The latter two are treated as a double system particularly suitable for two-component radiation fields. Finally, the limitations in use are discussed and some other systems, the study of which is in progress, mentioned (malonic and succinic acid) (author) [Serbo-Croat] Merenje energije koju apsorbuje sistem izlozen zracenju sastavni je deo svakog radijaciono-hemijskog eksperimenta. Time se moze objasniti veliki interes za koriscenje postojecih i razvijanje novih metoda dozimetrije u laboratorijama koje se bave radijacionom hemijom. Poslednjih godina posebna paznja se posvecuje dozimetriji vrlo visokih doza (10{sup 2}-10{sup 3} mrad) narocito onih sa kojima se radi u polju mesovitog zracenja reaktora. U laboratoriji za radijacionu hemiju Instituta 'Boris Kidric' u Vinci na dozimetriji zracenja reaktorskog jezgra radi se vec skoro 10 godina. Ta aktivnost je deo rada na hemijskoj dozimetriji uopste, kojom se bavi ova laboratorija od svog postanka (kraj 1955. godine). Sa radom na dozimetriji kod nas otpocelo se u periodu prvog podizanja na snagu reaktora RA, krajem 1959. godine. Paralelno su razvijane i primenjivane i hemijske i kalorimetrijske metode i njima vrsena dozimetrijska kalibracija reaktora. U ovom radu ucestvovalo je vise istrazivaca iz Laboratorije za radijacionu hemiju uz tesnu saradnju sa reaktorskim fizicarima i osobljem reaktora RA. Cilj ovog napisa je da sumira nas rad na hemijskoj dozimetriji reaktora. Pri tom se, najpre, zeli da ukaze na sustinu

Accuracy of WWR-M criticality calculations with code MCU-RFFI

International Nuclear Information System (INIS)

Petrov, Yu.V.; Erykalov, A.N.; Onegin, M.S.

1999-01-01

The scattering and deviation of fuel element parameters by manufacturing, approximations of the reactor structure in the computer model, the partly inadequate neutron cross sections in the computer codes etc. lead to a discrepancy between the reactivity computations and data. We have compared reactivity calculations using the MCU-RRFI Monte Carlo code of critical assemblies containing WWR-M2 (36 enriched) an WWR-M5 (90%) fuel elements with benchmark experiments. The agreement was about Δρ≅±0.3%. A strong influence of the water ratio on reactivity was shown and a significant heterogeneous effect was found. We have also investigated, by full scale reactor calculations for the RETR program, the contribution to the reactivity of the main reactor structure elements: beryllium reflector, experimental channels irradiation devices inside the core, etc. Calculations show the importance of a more thorough study of the contributions of products of the (n, α) reaction in the Be reflector to the reactivity. Ways of improving the accuracy of the calculations are discussed. (author)

Accuracy of WWR-M criticality calculations with code MCU-RFFI

Energy Technology Data Exchange (ETDEWEB)

Petrov, Yu V [Petersburg Nuclear Physics Institute RAS, 188350 Gatchina, St. Petersburg (Russian Federation); Erykalov, A N; Onegin, M S [Petersburg Nuclear Physics Institute RAS, 188350 Gatchina, St. Petersburg (Russian Federation)

1999-10-01

The scattering and deviation of fuel element parameters by manufacturing, approximations of the reactor structure in the computer model, the partly inadequate neutron cross sections in the computer codes etc. lead to a discrepancy between the reactivity computations and data. We have compared reactivity calculations using the MCU-RRFI Monte Carlo code of critical assemblies containing WWR-M2 (36 enriched) an WWR-M5 (90%) fuel elements with benchmark experiments. The agreement was about {delta}{rho}{approx_equal}{+-}0.3%. A strong influence of the water ratio on reactivity was shown and a significant heterogeneous effect was found. We have also investigated, by full scale reactor calculations for the RETR program, the contribution to the reactivity of the main reactor structure elements: beryllium reflector, experimental channels irradiation devices inside the core, etc. Calculations show the importance of a more thorough study of the contributions of products of the (n, {alpha}) reaction in the Be reflector to the reactivity. Ways of improving the accuracy of the calculations are discussed. (author)

IV Training program for the staff of the laboratory for the RA reactor exploitation; IV Programi obuke osoblja Laboratorije za eksploataciju reaktora RA

Energy Technology Data Exchange (ETDEWEB)

NONE

1960-07-01

All the staff members of the laboratory for RA reactor exploitation are obliged to learn the following: fundamental properties of the RA reactor, the role and functionality of the reactor components, basic and auxiliary reactor systems, basics of radioactivity, measures for preventing contamination. The personnel working in shifts must be acquainted with the regulations and instructions for reactor operation. Training programs for reactor operators, mechanics, electricians, instrumentators and dosimetrysts are described separately. Svi saradnici Laboratorije za eksploataciju reaktora RA moraju poznavati sledece oblasti: Osnovne karakeristike reaktora RA, princip rada, ulogu i funkcionisanje komponenti reaktora, osnovnih i pomocnih sistema reaktora; osnovne pojmove o radioaktivnom zracenju, mere za sprecavanje kontaminacije. Osoblje koje radi u smenama mora dodatno poznavati propise i uputstva za rad reaktora. Posebno je naveden program obuke operatora reaktora, mehanicara, electricara, instrumentatora, dozimetrista.

When is an INP not an INP?

Science.gov (United States)

Simpson, Emma; Connolly, Paul; McFiggans, Gordon

2016-04-01

Processes such as precipitation and radiation depend on the concentration and size of different hydrometeors within clouds therefore it is important to accurately predict them in weather and climate models. A large fraction of clouds present in our atmosphere are mixed phase; contain both liquid and ice particles. The number of drops and ice crystals present in mixed phase clouds strongly depends on the size distribution of aerosols. Cloud condensation nuclei (CCN), a subset of atmospheric aerosol particles, are required for liquid drops to form in the atmosphere. These particles are ubiquitous in the atmosphere. To nucleate ice particles in mixed phase clouds ice nucleating particles (INP) are required. These particles are rarer than CCN. Here we investigate the case where CCN and INPs are in direct competition with each other for water vapour within a cloud. Focusing on the immersion and condensation modes of freezing (where an INP must be immersed within a liquid drop before it can freeze) we show that the presence of CCN can suppress the formation of ice. CCN are more hydrophilic than IN and as such are better able to compete for water vapour than, typically insoluble, INPs. Therefore water is more likely to condense onto a CCN than INP, leaving the INP without enough condensed water on it to be able to freeze in the immersion or condensation mode. The magnitude of this suppression effect strongly depends on a currently unconstrained quantity. Here we refer to this quantity as the critical mass of condensed water required for freezing, Mwc. Mwc is the threshold amount of water that must be condensed onto a INP before it can freeze in the immersion or condensation mode. Using the detailed cloud parcel model, Aerosol-Cloud-Precipiation-Interaction Model (ACPIM), developed at the University of Manchester we show that if only a small amount of water is required for freezing there is little suppression effect and if a large amount of water is required there is a

Research in nuclear reactor theory and experimental reactors; Istrazivanja u teoriji nuklearnih reaktora i ekspeimentalni reaktori

Energy Technology Data Exchange (ETDEWEB)

Pop-Jordanov, J [Elektrotehnicki fakultet, Beograd (Yugoslavia)

1978-05-15

The paper is devoted to the possibilities of using experimental reactors for scientific research in nuclear power with a stress on problems in nuclear reactor theory. The stationary and nonstationary neutron fields, burnup prediction and analyses as well as fuel element development and the corresponding role of test-reactors were dealt with. It was shown that the investigations in nuclear reactor theory in Yugoslavia were developing continuously and in a useful interaction with experiments on research reactors. The needs for continuing the work on fundamental problems in neutron transport theory and on improving the calculation methods for thermal power reactors, together with the improvement of performances of existing research systems, were pointed out. A new quality in scientific work could be obtained dealing with the problems connected to a possible introduction of test-reactors, and fast systems later on. It was also pleaded for the corresponding orientations in fundamental sciences. (author) Rad je posvecen mogucnostima koriscenja eksperimentalnih reaktora za naucna istrazivanja u nuklearnoj energetici, sa akcentom na probleme teorije nuklearnih reaktora. Obradjena su stacionarna i nestacionarna neutronska polja, predikcija i analize sagorevanja, kao i razvoj gorivnih elemenata te uloga test-reaktora u osvajanju njihove tehnologije. Pokazano je da su se istrazivanja u teoriji nuklearnih reaktora u nas odvijala kontinualno i u korisnoj interakciji sa eksperimentima na istrazivackim reaktorima. Istaknuta je potreba nastavljanja rada na fundamentalnim problemima transportne teorije neutrona i na usavrsavanju metoda proracuna termalnih enerrgetskih reaktora, uz poboljsanje performansi postojecih istrazivackih sistema. Novi kvalitet u naucnom radu bi predstavljala orijentacija na probleme vezane sa eventualnim uvodjenjem test-reaktora, a zatim i brzih sistema. Pledirano je i za odgovarajuca usmeravanja u fundamentalnim naukama. (author)

Problems of space-time behaviour of nuclear reactors; Problemi prostorno-vremenskog ponasanja nuklearnih reaktora

Energy Technology Data Exchange (ETDEWEB)

Obradovic, D [Institut za nuklearne nauke ' Boris Kidric' , Vinca, Belgrade (Yugoslavia)

1966-07-01

This paper covers a review of literature and mathematical methods applied for space-time behaviour of nuclear reactors. The review of literature is limited to unresolved problems and trends of actual research in the field of reactor physics. Dat je pregled literature i matematickih metoda koje se koriste prilikom tretiranja prostorno-vremenskog ponasanja nuklearnih reaktora. Pregled literature ogranicen je na jos neresene probleme i pravce u kojima su danas usmerena istrazivanja u ovoj oblasti fizike nuklearnih reaktora (author)

Diagrams about RA reactor operation, Annex 7; Prilog 7 - Rad reaktora RA po godinama - dijagrami

Energy Technology Data Exchange (ETDEWEB)

Martinc, R [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1976-01-15

This Annex 7 includes diagrams about RA reactor operation (MWh) from 1960-1975; mean values of reactor power per day and month in 1975, and percent of utilisation of experimental space during 1975. [Serbo-Croat] Ovaj prilog sadrzi dijagrame o radu reaktora (MWh) po godinama (1960-1975); srednje vrednosti dnevne snage reaktora u 1975. godini; rad reakrora (MWh) po mesecima u 1975; procenat iskoriscenja eksperimentalnog prostora u 1975. godini.

Annex VII - Diagrams: 1. Reactor operation (1960-1977); 2. Mean daily reactor power density in 1977; 3. Monthly reactor power for 1977; 4. percent of utilization of experimental space in 1977; Prilog VII - Dijagrami: 1. Rad reaktora (MWh) po godinama (1960-1977); 2. Srednja dnevna snaga reaktora u 1977. godini; 3. Rad reaktora (MWh) po mesecima za 1977. godinu i 4. Procenat iskoriscenja eksperimentalnog prostora u 1977. godini

Energy Technology Data Exchange (ETDEWEB)

NONE

1977-12-15

This Annex includes the following diagrams: 1. Annual Reactor RA power production (MWh) for the period from 1960-1977; 2. Mean daily reactor power density MW in 1977; 3. Monthly reactor power production (MWh) for 1977; 4. percent of utilization of experimental space in 1977. [Serbo-Croat] Ovaj prilog sadrzi dijagrame: 1. Rad reaktora (MWh) po godinama (1960-1977); 2. Srednja dnevna snaga reaktora u 1977. godini; 3. Rad reaktora (MWh) po mesecima za 1977. godinu i 4. Procenat iskoriscenja eksperimentalnog prostora u 1977. godini.

Course of pin fuel test In WWR-M reactor core

International Nuclear Information System (INIS)

Zakharov, A.S.; Kirsanov, G.A.; Konoplev, K.A.

2005-01-01

Pin type fuel element (FE) of square form with twisted ribs was developed in VNIINM as an alternative for tube type FE of research reactors. Two variants of full-scale fuel assemblies (FA) are under test in the core of PNPI WWR-M reactor. One FA contains FE with UO 2 LEU and other - UMo LEU. Both types of FE have an aluminum matrix. Results of the first stages of the test are presented. (author)

Future of neutron-physical research at WWR-K reactor

International Nuclear Information System (INIS)

Akhmetov, E. Z.; Ibraev, B.M.

1999-01-01

Very cold neutrons (E nm) mostly indicate wave properties in the course of going through substance. The properties are determined by the value of the relation of neutron wave length to structure dimensions of the object studied. Very cold neutrons usage in nuclear-physical and neutron-optical research, in studying of structure and phase transformation of substances in different aggregative states continues to increase and very cold neutrons scattering method can be applied in those situation when other methods don't help to obtain the result (for example identification of light nuclei by roentgen rays etc.). Currently, we suppose that very cold neutrons can be applied in the course of studying superconductors, biological objects, different polymer systems and liquid crystals. Also it can be applied in radioecology - in determination of trans-uranium and trans-plutonium elements content in soil of territories where underground nuclear explosions were performed. These researches can be implemented at the WWR-K reactor. Its parameters and structure allow creating of 'Time-of-flight spectrometer very cold neutrons and cold neutrons', that functionally consists of the following basic blocks: - neutron conductor of stainless steel gage 50 mm, 8 m length; - switch block; - measurement cryostat chamber; - Vacuum shutters; - Measurement calculation complex. Earlier at the WWR-K the authors obtained maximum fluxes of ultra-cold neutrons (E=10 -7 eV) from vapor-hydrogen moderator at the temperature of 80 K and determined interaction cross-sections of ultra-cold neutrons with gas medium

Possibility for dry storage of the WWR-K reactor spent fuel

International Nuclear Information System (INIS)

Arinkin, F.M.; Belyakova, E.A.; Gizatulin, Sh.Kh.; Khromushin, I.V.; Koltochik, S.N.; Maltseva, R.M.; Medvedeva, Z.V.; Petukhov, V.K.; Soloviev, Yu.A.; Zhotabaev, Zh.R.

2000-01-01

This work is devoted to development of the way for dry storage of spent fuel of the WWR-K reactor. Residual energy release in spent fuel element assembly was determined via fortune combination of calculations and experiments. The depth of fission product occurrence relative to the fuel element shroud surface was found experimentally. The time of fission product release to the fuel element shroud surface was estimated. (author)

Design and experience of HEU and LEU fuel for WWR-M reactor

International Nuclear Information System (INIS)

Enin, A.A.; Erykalov, A.N.; Zakharov, A.S.; Zvezdkin, V.S.; Kirsanov, G.A.; Konoplev, K.A.; L'vov, V.S.; Petroc, Y.V.; Saikov, Y.P.

1997-01-01

A research reactor for providing high neutron fluxes has to have a compact, well breeding core with high specific heat removal. The WWR-M fuel elements meet these demands. They have optimum metal-to-water ratio and the recordly developed specific heat-transfer surface providing in a pool-type reactor at atmospheric pressure the unit heat of (900±100) kW. (author)

Safety report on WWR-S reactor

International Nuclear Information System (INIS)

Horyna, J.; Kaisler, L.; Listik, E.

1981-04-01

The present Safety Report of the WWR-S reactor summarizes findings obtained during the trial and partially also permanent operation of the reactor after two stages of its reconstruction implemented between 1974 and 1976. Most data are presented necessary for assessing probable risks of possible accident conditions whose consequences pose health hazards to individuals of the population, radiation personnel and the facilities themselves. Attention is devoted to the description of the locality, to components and systems, heat removal from the core, design aspects, the quality of new and old parts of the technological circuits, the systems of protection and control, the emergency core cooling system, the problems of radiation safety, and to the safety analyses of the abnormal states envisaged. The Report was compiled with regard to IAEA and CMEA recommendations concerning safe operation of research reactors and to the recommendations and binding decisions of the Czechoslovak Atomic Energy Commission. (author)

Nuclear Reactor RA Safety Report, Vol. 8, Auxiliary system; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 8, Pomocni sistemi

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

This volume describes RA reactor auxiliary systems, as follows: special ventilation system, special drainage system, hot cells, systems for internal transport. Ventilation system is considered as part of the reactor safety and protection system. Its role is eliminate possible radioactive particles dispersion in the environment. Special drainage system includes pipes and reservoirs with the safety role, meaning absorption or storage of possible radioactive waste water from the reactor building. Hot cells existing in the RA reactor building are designed for production of sealed radioactive sources, including packaging and transport. [Serbo-Croat] Ova knjiga obuhvata opis pomocnih sistem reaktora RA: sistem specijalne ventilacije, sistem specijalne kanalizacije, vruce komore, sistemi za unutrasnji transport. Ventilacioni sistem je znacajan deo sistema zastite i sigurnosti reaktora. Njegova je uloga da onemoguci disperziju radioaktivnih cestica u okolinu. Sistem specijalne kanalizacije sastoji se od agregata, cevovoda i rezervoara sa sigurnosnom armaturom i ima zadatak da prihvata i u sebe deponuje radioaktivne otpadne vode iz objekarta reaktora RA. U zgradi reaktora RA postoje vruce komore koje su namenjene za proizvodnju zatvorenih izvora zracenje, ukljucujuci i mehanicku obradu, prepakivanje i transport.

Implementation of U.S. Department of Energy physical protection upgrades in Lithuania and Uzbekistan

International Nuclear Information System (INIS)

Haase, M.; Romesberg, L.; Showalter, R.; Soo Hoo, M.S.; Corey, J.; Engling, E.

1996-01-01

Since 1994, the U.S. Department of Energy (DOE) has provided cooperative assistance to the non-nuclear weapons states of the Former Soviet Union. This effort, within DOE's program of Material Protection, Control, and Accounting (MPC ampersand A), identified the Institute of Nuclear Physics (INP) in Uzbekistan and the Ignalina Nuclear Power Plant (INPP) in Lithuania as sites for cooperative MPC ampersand A projects. The INP, located just outside of Tashkent, is the site of a 10-megawatt WWR-SM research reactor. This reactor is expected to remain operational as a major nuclear research and isotope production reactor for Central Asia. The INPP, located 100 kilometers northeast of the capital city of Vilnius, consists of two Russian-made RBMK reactors with a combined power output of 3,000 megawatts (electric). This power plant has been the subject of international safety and security concerns, which prompted DOE's cooperative assistance effort. This paper describes U.S. progress in a multi-national effort directed at implementing physical protection upgrades in Lithuania and Uzbekistan. The upgrades agreed upon between DOE and the INP and between DOE and the INPP have been designed to interface with upgrades being implemented by other donor countries. DOE/INPP upgrade projects include providing training on U.S. approaches to physical protection, access control through the main vehicle portal, a hardened central alarm station, and improved guard force communications. DOE/INP upgrade projects in Uzbekistan include an access control system, a hardened fresh fuel storage vault, an interior intrusion detection and assessment system, and an integrated alarm display and assessment system

The Waste Management Plan integration into Decommissioning Plan of the WWR-S research reactor from Romania

International Nuclear Information System (INIS)

Barariu, Gheorghe; Oprescu, Theodor; Filip, Mihaela; Sociu, Florin

2008-01-01

The paper presents the progress of the Radioactive Waste Management Plan which accompanies the Decommissioning Plan for research reactor WWR-S located in Magurele, Ilfov, near Bucharest, Romania. The new variant of the Decommissioning Plan was elaborated taking into account the IAEA recommendation concerning radioactive waste management. A new feasibility study for WWR-S decommissioning was also developed. The preferred safe management strategy for radioactive wastes produced by reactor decommissioning is outlined. The strategy must account for reactor decommissioning, as well as rehabilitation of the existing Radioactive Waste Treatment Plant and the upgrade of the Radioactive Waste Disposal Facility at Baita-Bihor. Furthermore, the final rehabilitation of the laboratories and reusing of cleaned reactor building is envisaged. An inventory of each type of radioactive waste is presented. The proposed waste management strategy is selected in accordance with the IAEA assistance. Environmental concerns are part of the radioactive waste management strategy. (authors)

Peptides for functionalization of InP semiconductors.

Science.gov (United States)

Estephan, Elias; Saab, Marie-belle; Larroque, Christian; Martin, Marta; Olsson, Fredrik; Lourdudoss, Sebastian; Gergely, Csilla

2009-09-15

The challenge is to achieve high specificity in molecular sensing by proper functionalization of micro/nano-structured semiconductors by peptides that reveal specific recognition for these structures. Here we report on surface modification of the InP semiconductors by adhesion peptides produced by the phage display technique. An M13 bacteriophage library has been used to screen 10(10) different peptides against the InP(001) and the InP(111) surfaces to finally isolate specific peptides for each orientation of the InP. MALDI-TOF/TOF mass spectrometry has been employed to study real affinity of the peptide towards the InP surfaces. The peptides serve for controlled placement of biotin onto InP to bind then streptavidin. Our Atomic Force Microscopy study revealed a total surface coverage of molecules when the InP surface was functionalized by its specific biotinylated peptide (YAIKGPSHFRPS). Finally, fluorescence microscopy has been employed to demonstrate the preferential attachment of the peptide onto a micro-patterned InP surface. Use of substrate specific peptides could present an alternative solution for the problems encountered in the actually existing sensing methods and molecular self-assembly due to the unwanted unspecific interactions.

Thermal diffusion in nanostructured porous InP

International Nuclear Information System (INIS)

Srinivasan, R.; Ramachandran, K.

2008-01-01

Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studies by photoacoustic (PA) spectroscopy revealed one order decrease in thermal conductivity of porous InP compared to the bulk. Further it is shown that the thermal conductivity of porous InP decreases with decrease in size of the particles. (author)

Operation, maintenance and utilization of the RA reactor, Annual report 1978; Pogon, odrzavanje i eksploatacija reaktora RA, Izvestaj o radu u 1978. godini

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1978-12-15

It has been planned for 1978 that the RA reactor would be operated for 158 dana at nominal power of 6.5 MW meaning production of 24 648 MWh. The plan was fulfilled since 24 652 MWh was produces. Reactor operation for 158 days is relevant to reactor operation for 200 days in the period before 1975. The reason is increased neutron flux achieved due to improved fuel management and the characteristics of the new 80% enriched fuel. At the end of 1978 the reactor core contained 45% of 80% enriched fuel elements. Increase of neutron flux has shortened the typical time needed for irradiation of the most important samples for isotope production. This significant success in reactor operation is at the same time an obligation for increasing its utilization. Some new trends proposed for increasing reactor utilization capacities were presented at the Conference on utilization of research nuclear reactors in Yugoslavia held in May 1978. [Serbo-Croat] Reaktor RA imao je u planu za 1978. godinu 158 dana rada na nominalnoj snazi od 6.5 MW, sto odgovara radu od 24 648 MWh. Ostvareno je 24 652 MWh sto znaci da je plan ostvaren. Rad reaktora od 158 dana odgovara radu reaktora od 200 dana u periodu pre 1975. godine. Razlog je povecanje neutronskog fluksa zahvaljujuci usavrsenom rukovanju gorivom i karakteristikama novog 80% obogacenog goriva. Krajem 1978. godine 45% jezgra reaktora bilo je popunjeno novim 80% obogacenim gorivom. Povecani neutronski fluks omogucio je skracenje vremena ozracivanja vaznih uzoraka za proizvodnju radioaktivnih izotopa. Ovaj znacajan uspeh je istovremeno obaveza znatno veceg iskoriscenja reaktora RA. Rezultati napora da se postigne vece iskoriscenje reaktora RA prezentirani su na Konferenciji o koriscenju nuklearnih reaktora u Jugoslaviji koja je odrzana u maju 1978.

InP Solar Cells and their Flight Experiments

OpenAIRE

TAKAHASHI, Keiji; YAMAGUCHI, Masafumi; TAKAMOTO, Tatsuya; IKEGAMI, Shingo; OHNISHI, Akira; HAYASHI, Tomonao; USHIROKAWA, Akio; KOHBATA, Masahiko; ARAI, Hidetoshi; HASHIMOTO, Katsumasa; ORH, Takeshi; OKAZAKI, Hitoshi; TAKAMURA, Hideto; URA, Mitsuru; OHMORI, Masamichi

1992-01-01

We have developed high-efficiency homojunction 1 cm × 2 cm InP space solar cells by diffusing In_2S_3 into p type InP substrates and investigated their fundamental characteristics such as electrical and mechnical characteristics and thermal properties. On the radiation resistant mechanism of InP cells, we have studied InP cells fabricated at NTT Laboratories and found superior properties such as room temperture annealing and minority carrier injection enhanced annealing phenomena for radiatio...

Nuclear Reactor RA Safety Report, Vol. 12, Accidents during reactor operation; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 12, Akcidenti u dosadasnjem radu reaktora

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

This volume includes description and analysis of typical accidents occurred during operation of RA reactor in chronological order, as follows: contamination of primary coolant circuit; leakage of heavy water from the primary coolant loop; contamination of vertical experimental channel; air contamination in the reactor building and loss of circulation of the primary coolant; failures of the vacuum pump and spent fuel packaging device; rupture of the spent fuel element cladding; dethronement's of capsule for irradiation of fuel element; rupture of the vertical experimental channel and contamination of the surroundings; swelling of a fuel element; appearance of deposits on the surface of the fuel elements cladding. The last chapter describes similar accidents occurred on nuclear reactors in the world. [Serbo-Croat] Ova knjiga sadrzi hronoloski pregled i analizu karakteristika akcidenata u dosadasnjem radu reaktora RA: kontaminacija primarnog kola hladjenja; isticanje teske vode is primarnog kola hladjenje; kontaminacija eksperimentalnog vertikalnog kanala; kontaminacija vazduha u hali reaktora i prestanak cirkulacije primarnog hladioca; otkaz vakum pumpe i uredjaja za prepakivanje ozracenog goriva; proboj kosuljice ozracenog gorivnog elementa; dehermetizacija kapsule za ozracivanje nuklearnog goriva; proboj eksperimentalnog vertikalnog kanala i kontaminacija prostorija; bubrenje gorivnog elementa; pojava taloga na kosuljicama gorivnih elemenata. Poslednje poglavlje opisuje udese na koji su se dogodili na nuklearnim reaktorima u svetu.

High resistivity in InP by helium bombardment

International Nuclear Information System (INIS)

Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

1984-01-01

Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

Science.gov (United States)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

RA research nuclear reactor operation in forced regime, Annex 5; Prilog 5 - Rad istrazivackog nuklearnog reaktora RA u forsiranom rezimu, Prvo saopstenje

Energy Technology Data Exchange (ETDEWEB)

Mitrovic, S [Institute of Nuclear Sciences Boris Kidric, Reaktor RA, Vinca, Beograd (Serbia and Montenegro)

1964-12-15

In order to increase the flux and experimental potentials of the RA reactor, properties of the reactor operating in the forced regime have been inspected four times, twice with the spent fuel (core C), and twice with partly fresh fuel (cores E and F). Forced regime means power higher than nominal 6.5 MW. From the analyses of technology parameters during operation in the forced regime at power levels of 7 and 11 MW, state and behaviour of the components, efficiency of the biological protection and other parameters it was concluded that the reactor operation is possible at power levels of 10 MW during a whole year, and under certain conditions even longer operation at power levels up to 15 MW. This paper examines the reactor operation conditions in the forced regime and gives conclusions related to real increase of the experimental possibilities, isotope production and economic factors. Radi povecanja fluksa i eksperimentalnih mogucnosti reaktora RA, cetiri puta su proverene osobine reaktora u forsiranom rezimu, tj. na snagama vecim od nominalne (6,5 MW) i to dva puta sa istrosenim gorivom (jezgro C) i dva puta sa delimicno svezim (jezgra E i F). Iz analize tehnoloskih parametara u toku eksperimentalno rada reaktora u forsiranom rezimu na snagama od 7 do 11 MW, stanja i ponasanja opreme, efikasnosti bioloske zastite i ostalih parametara, zakljucuje se da je moguc permanentan rad reaktora tokom cele godine na snagama do 10 MW, a pod izvesnim uslovima i duzi rad na snagama do 15 MW. U radu su diskutovani uslovi rada reaktora u forsiranom rezimu i donose se zakljucci o realnom povecanju eksperimentalnih mogucnosti, proizvodnje radioizotopa i o ekonomskim faktorima (author)

Neutronics substantiation of possibility for conversion of the WWR-K reactor core to operation with low-enriched fuel

International Nuclear Information System (INIS)

Arinkin, F.M.; Gizatulin, Sh.H.; Zhantikin, T.M.; Koltochnik, S.N.; Takibaev, A.Zh.; Talanov, S.V.; Chakrov, P.V.; Chekushina, L.V.

2002-01-01

The studies are aimed to calculation and experimental justification of possibility for conversion of the WWR-R reactor core to low-enriched nuclear fuel (the 19.75-% enrichment in isotope U-235), resulting in reducing the risk of non-sanctioned proliferation of nuclear materials which can be used as weapons materials. The analysis of available published data, related to problem of reduction of enrichment in the fuel used in research thermal reactors, has been carried out. Basing on the analysis results, reference fuel compositions have been chosen, in particular, uranium dioxide (UO 2 ) in aluminum master form and the UA1 4 alloy. Preliminary calculations have shown that, with the WWR-K reactor core preserved existing critical characteristics (the fuel composition: UA1 4 ), the uranium concentration in the fuel element is to be increased by a factor of 2.0-2.2, being impossible technologically. The calculations have been performed by means of the Monte Carlo computational codes. The program of optimal conversion of the WWR-K reactor core to low-enriched fuel has been developed, including: development of calculation models of the reactor core, composed of various designs of fuel elements and fuel assemblies (FA), on a base of corresponding computational codes (diffusion, statistical, etc.); implementation of experiments in the zero-power reactor (critical assembly) with the WWR-C-type FA, in view of correction of the computational constants used in calculations; implementation of reactor core neutronics calculations, in view of selection of the U-235 optimal content in the low-enriched fuel elements and choice of FA reload strategy at the regime of reactor core after burning; determination of the fuel element specification; determination of the critical and operational loads for the reactor core composed of rod/tubular fuel elements; calculation of the efficiency of the protection control system effectors, optimization of its composition, number and locations in the

RA Research nuclear reactor Part 1, RA Reactor operation and maintenance in 1987; Istrazivacki nuklearni reaktor RA Deo 1 - Pogon i odrzavanje nuklearnog reaktora RA u 1987. godini

Energy Technology Data Exchange (ETDEWEB)

Sotic, O; Martinc, R; Cupac, S; Sulem, B; Badrljica, R; Majstorovic, D; Sanovic, V [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1987-12-15

RA research reacto was not operated due to the prohibition issued in 1984 by the Government of Serbia. Three major tasks were finished in order to fulfill the licensing regulations about safety of nuclear facilities which is the condition for obtaining permanent operation licence. These projects involved construction of the emergency cooling system, reconstruction of the existing special ventilation system, and renewal of the system for electric power supply of the reactor systems. Renewal of the RA reactor instrumentation system was initiated. Design project was done by the Russian Atomenergoeksport, and is foreseen to be completed by the end of 1988. The RA reactor safety report was finished in 1987. This annual report includes 8 annexes concerning reactor operation, activities of services and financial issues, and three special annexes: report on testing the emergency cooling system, report on renewal of the RA reactor and design specifications for reactor renewal and reconstruction. [Serbo-Croat] Reaktor RA nije radio usled zabrane Izvsnog veca Skupstine Srbije od 27. avgusta 1984. U cilju povecanja pouzdanosti rada reaktora a da bi se udovoljilo zakonskim propisima sto je uslov za dobijanje stalne dozvole za rad realizovana su tri velika zahvata na reaktoru RA. Ovi zahvati obuhvatili su izgradnju sistema za hladjenje jezgra reaktora u slucaju nuzde, rekonstukciju postojeceg sistema specijalne ventilacije i rekonstrukciju sistema napajanja elektricnom energijom neophodnih potrosaca reaktora RA. Zapoceti su radovi na modernizaciji intrumentacije reaktora RA, projekat je izradjen u sovjetskoj organizaciji Atomenergoeksport, a trebalo bi da se realizuje do kraja 1989. godine. U cilju povecanja prostora za skladistenje ozracenog nuklearnog goriva i njegovog efikasnijeg koriscenja, izradjen je su projekti za rekonstrukciju postojecih uredjaja za rukovanje gorivom, povecanje smestajnog kapaciteta i preciscavanje vode u bazenima za odlezavanje. Realizaija ovih

Power reactor noise measurements in Hungary

International Nuclear Information System (INIS)

Pallagi, D.; Horanyi, S.; Hargitai, T.

1975-01-01

An outline is given of the history of reactor noise research in Hungary. A brief description is given of studies in the WWR-SM reactor, a modified version of the original WWR-S thermal reactor, for the detection of in-core simulated boiling by analysis of the noise of out-of-core ionization chambers. Coolant velocity measurements by transit time analysis of temperature fluctuations are described. (U.K.)

Activity on non-destructive testing as constituent element of the quality management in accordance with ISO 9001:2000 standard at The Institute of Nuclear Physics, Kazakhstan

International Nuclear Information System (INIS)

Kadyrzhanov, K.K.; Kislitsin, S.B.; Ablanov, M.B.

2004-01-01

An increase of technical and public safety requirements for facilities of nuclear industries, an efficient quality control based on non-destructive testing (NDT) techniques is crucial. Therefore, Institute of Nuclear Physics (INP) through NDT Division makes efforts towards a competent NDT inspection of its facilities starting from research reactor of WWR-K type with a further activity according to the National Program for Development in Nuclear Industry. The additional objective is to harmonize the present codes and standards for Nuclear Industry as an integral part of the INP policy in a quality management according ISO 9001:2000 Standard. (author)

Proton irradiation induced defects in Cd and Zn doped InP

International Nuclear Information System (INIS)

Rybicki, G.C.; Williams, W.S.

1993-01-01

Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

Heteroepitaxially grown InP solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

1990-01-01

Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

Indium phosphide (InP) for optical interconnects

NARCIS (Netherlands)

Lebby, M.; Ristic, S.; Calabretta, N.; Stabile, R.; Tekin, T.; Pitwon, R.; Håkansson, A.; Pleros, N.

2016-01-01

We present InP as the incumbent technology for data center transceiver and switching optics. We review the most popular InP monolithic integration approaches in light of photonic integration being recognized as an increasingly important technology for data center optics. We present Multi-Guide

Nuclear Reactor RA Safety Report, Vol. 14, Safety protection measures; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 14, Sigurnosne zastitne mere

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

Nuclear reactor accidents can be caused by three type of errors: failure of reactor components including (1) control and measuring instrumentation, (2) errors in operation procedure, (3) natural disasters. Safety during reactor operation are secured during its design and construction and later during operation. Both construction and administrative procedures are applied to attain safe operation. Technical safety features include fission product barriers, fuel elements cladding, primary reactor components (reactor vessel, primary cooling pipes, heat exchanger in the pump), reactor building. Safety system is the system for safe reactor shutdown and auxiliary safety system. RA reactor operating regulations and instructions are administrative acts applied to avoid possible human error caused accidents. [Serbo-Croat] Uzroci udesa na nuklearnim reaktorima mogu se svrstati u jednu od sledece tri grupe: (1) otkaz pojedinih delova opreme, ukljucujuci mernu i kontrolnu instrumentaciju, (2) greske u pogonu i eksploataciji, (3) prirodne nepogode, katastrofe. Bezbednost i sigurnost u radu nuklearnog reaktora osiguravaju se odredjenim merama koje se preduzimaju pri njegovoj izgradnji i kasnije njegovoj elsploataciji. Te mere se mogu podeliti u sledece dve kategorije: (1) mere tehnicke zastite, i (2) administrativne mere. Mere tehnicke zastite sastoje se od barijere fissionih produkata, kosuljice gorivnih elemenata, primarnog kola reaktora RA (reaktorski sud, cevovod primarnog kola, toploizmenjivac u pimpi), zgrada reaktora. Sigurnosni sistem cini sistem za sigurnosno zaustavljanje reaktora i pomocni sigurnosni sistem. Kroz odgovarajuce propise i uputstva za rad na reaktoru RA primenjene su administrativne mere neophodne za sprecavanje udes koji bi mogao nastati kao posledica ljudskog faktora.

Thermal diffusion in nanostructured porous InP

Indian Academy of Sciences (India)

Nanostructured porous InP samples were prepared by electrochemical anodic dissolution of InP for various current densities and etching periods. The samples were characterized by SEM and photoluminescence (PL) where a blue shift was observed in PL. Thermal properties studied by photoacoustic (PA) spectroscopy ...

Progress in InP solar cell research

International Nuclear Information System (INIS)

Weinberg, I.; Brinker, D.J.

1988-01-01

Progress, in the past year, in InP solar cell research is reviewed. Small area cells with AMO, total area efficiencies of 18.8 percent were produced by OMCVD and Ion Implantation. Larger area cells (2 and 4 sq cm) were processed on a production basis. One thousand of the 2 sq cm cells will be used to supply power to a small piggyback lunar orbiter scheduled for launch in February 1990. Laboratory tests of ITO/InP cells, under 10 MeV proton irradiation, indicate radiation resistance comparable to InP n/p homojunction cells. Computer modeling studies indicate that, for identical geometries and dopant concentrations, InP solar cells are significantly more radiation resistant than GaAs under 1 MeV electron irradiation. Additional computer modeling calculations were used to produce rectangular and circular InP concentrator cell designs for both the low concentration SLATS and higher concentration Cassegrainian Concentrators

InP nanopore arrays for photoelectrochemical hydrogen generation.

Science.gov (United States)

Li, Qiang; Zheng, Maojun; Zhang, Bin; Zhu, Changqing; Wang, Faze; Song, Jingnan; Zhong, Miao; Ma, Li; Shen, Wenzhong

2016-02-19

We report a facile and large-scale fabrication of highly ordered one-dimensional (1D) indium phosphide (InP) nanopore arrays (NPs) and their application as photoelectrodes for photoelectrochemical (PEC) hydrogen production. These InP NPs exhibit superior PEC performance due to their excellent light-trapping characteristics, high-quality 1D conducting channels and large surface areas. The photocurrent density of optimized InP NPs is 8.9 times higher than that of planar counterpart at an applied potential of +0.3 V versus RHE under AM 1.5G illumination (100 mW cm(-2)). In addition, the onset potential of InP NPs exhibits 105 mV of cathodic shift relative to planar control. The superior performance of the nanoporous samples is further explained by Mott-Schottky and electrochemical impedance spectroscopy ananlysis.

Radioactivation and X-ray fluorescence methods of determination of some elements in atmospheric air and waters

International Nuclear Information System (INIS)

Kulmatov, R.A.; Kist, A.A.; Karimov, I.I.; Pulatov, D.D.; Kamil'dzhanov, A.Kh.

1981-01-01

Possibilities of instrumental radioactivation and X-ray fluorescence method of determining certain elements in aerosols and waters in the region of metallurgic production location and around it are considered. For conducting instrumental radioactivation analysis the samples have been irradiated on filter during 20h in the thermal neutron flux f=10 13 neutr/cm 2 xs of nuclear reactor-WWR-SM INP ASUzSSR. Measurement of induced activity has been conducted after 7 and 15-day cooling by means of Ge(Li) detectors. Averaged results of instrumental radioactivation and X-ray fluorescence analysis of element (Cu, Zn, Fe, Pb) composifion of some samples are presented. Content of such elements as copper, zinc, lead in the industrial region several times exceeds usual background content that is caused by industrial releases. Toxic effect, rate of aerosol release from atmosphere and radius of harmful effect of industrial enterprises on environment much depends on dispersion. A set of filter materials differing from one another by pore diameter have been used for conducting dispersion analysis of aerosals [ru

Nuclear Reactor RA Safety Report, Vol. 15, Analysis of significant accidents; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 15, Analiza znacajnih akcidenata

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

Power excursions of the RA reactor a mathematical model of reactor kinetic behaviour was formulated to describe power and temperature coefficients for both reactor fuel and moderator. Computer code TM-1 was written for analysis of possible reactor accidents. Power excursions caused by uncontrolled control rod removal and heavy water flow into the central vertical experimental channel were analyzed. Accidents caused by fuel elements handling were discussed including possible fuel element damage. Although the probability for uncontrolled radioactive materials release into the environment is very low, this type of accidents are analyzed as well including the impact on the personnel and the environment. A separate chapter describes analysis of the loss of flow accident. Safety analysis covers the possible damage of the outer steel Ra reactor vessel and the water screens which are part of the water biological shield. [Serbo-Croat] Radi analize dinamickog ponasanja reaktora RA u toku ekskurzije snage formulisan je matematicki model koji opisuje promene snage i temperature goriva i moderatora. Za analizu predpostavljenih akcidenata realizovan je racunarski program TM-1. Analizirane su ekskurzije snage usled nekontrolisanog izvlacenja kontrolnih sipki i punjenja centralnog vertikalnog eksperimentalnog kanala teskom vodom. Analizirani su akcidenti pri rukovanju nuklearnim gorivom ukljucujuci ostecenje nuklearnog goriva. Iako je verovatnoca za nekontrolisano rasturanje radioaktivnog materijala mala, analizirani su i ovakvi moguci akcidenti koji mogu uticati kako na osoblje reaktora tako i na okolinu. Posebno poglavlje obuhvata analizu akcidenta u slucaju prestanka cirkulacije primarnog hladioca. Analiza sigurnosti reaktora obuhvata i moguce ostecenje spoljasnjeg celicnog suda reaktora RA kao i vodenih ekrana koji su deo vodenog bioloskog stita.

Effects of the electron beam on InP(100)

International Nuclear Information System (INIS)

Bouslama, M.; Jardin, C.; Ghamnia, M.

1996-01-01

Auger Electron Spectroscopy (AES) is performed to monitor the InP(100) surface evolution while it is irradiated by an electron beam of 5 KeV energy and 10 -3 A.cm -2 current density. A charge phenomenon appears during the irradiation of sputter-cleaned InP(100) by Ar + at low energy (500 eV). The deposition of phosphorus or antimony at room temperature on cleaned InP(100) is a good way of preventing this charging problem. This is also achieved by the growth of stoichiometric indium phosphide on InP(100) substrate, from an injection of phosphine and indium trimethyl whose ratio V/III is of 50, in a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. The electron beam even acts to stimulate oxidation of the stoichiometric InP(100) surface involving on the top layers, into a well defined oxide such as InPO 4 or a contamination layer composed of carbon and oxygen. The partial pressure in the spectrometer is about 10 -9 Torr. The incident electrons produce breaking of (In-P) chemical bonds so that the resulting indium takes part in the oxidation process. The phosphorus is thought to be desorbed from the surface. (author)

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

High conversion efficiency and high radiation resistance InP solar cells

International Nuclear Information System (INIS)

Yamamoto, Akio; Itoh, Yoshio; Yamaguchi, Masafumi

1987-01-01

The fabrication of homojunction InP solar cells has been studied using impurity thermal diffusion, organometallic vapor phase epitaxy (OMVPE) and liquid phase epitaxy (LPE), and is discussed in this paper. Conversion efficiencies exceeding 20 % (AM1.5) are attained. These are the most efficient results ever reported for InP cells, and are comparable to those for GaAs cells. Electron and γ-ray irradiation studies have also been conducted for fabricated InP cells. The InP cells were found to have higher radiation resistance than GaAs cells. Through these studies, it has been demonstrated that the InP cells have excellent potential for space application. (author)

Interfacial reactions between thin films of zinc and (100) InP

International Nuclear Information System (INIS)

Kaminska, E.; Piotrowska, A.; Barcz, A.; Mizera, E.; Dynowska, E.

1995-01-01

The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn 3 P 2 phase lattice matched to InP. (author)

Operation and maintenance of the RA nuclear reactor for 1977, Report Annex I; Rad i iskoriscenost reaktora RA u 1977. godini, izvestaj Prilog I

Energy Technology Data Exchange (ETDEWEB)

Martinc, R; Stanic, A [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1977-12-15

RA reactor operation plan was fulfilled, meaning 28583 MWh. In addition to 183 days of operation at full power, during 1977 the reactor was operated for 14 days at lower power level according to the demand of users. The utilization level of rector irradiation capability (neutron flux and time of operation) was 14%. This annex includes detailed statistical data about reactor operation, utilization, power level, savings concerned with new 80% enriched fuel. All the 9 vertical experimental channels were used for irradiation in the reactor core. Digression from the action plan were caused by refueling and demand od the users. There have been 11 safety shutdowns, of which 6 caused by power cuts, 4 due to failure of the instruments, and 1 due to earthquake in March 1977. [Serbo-Croat] Planirani rad reaktora na nominalnoj snazi ostvaren je u iznosu od 28583 MWh. U toku 1977. godine reaktor je radio 14 dana na manjim snagama i u posebnom eksperimentalnom rezimu na zahtev korisnika. Iskoriscenost kapaciteta reaktora za ozracivanje uzoraka (na bazi neutronskog fluksa i vremena rada reaktora) bila je 41%. Ovaj izvestaj sadrzi detaljne statisticke podatke o radu i iskoriscenosti reaktora, podatke o ustedi goriva prelaskom na 80% obogaceno gorivo. Korisceno je svih 9 vertikalnih eksperimentalnih kanala u aktivnoj zoni. Uzroci odstupanja od plana rada osim zamene goriva bili su zahtevi korisnika. Bilo je 11 sigurnosnih zaustavljanja, 6 usled nestanka napona, 4 usled kvarova opreme i instrumentacije, i 1 put usled zemljotresa u martu.

Summary of Workshop on InP: Status and Prospects

Science.gov (United States)

Walters, R. J.; Weinberg, I.

1994-01-01

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Operation, safety and utilization of the RA reactor in 1978 - Report; Prilog I - Rad, sigurnost i iskoriscenost reaktora RA u 1978. godini - Izvestaj

Energy Technology Data Exchange (ETDEWEB)

Martinc, R; Stanic, A [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1978-12-15

This report includes a review of work related to development of reactor operation capacities and increase of the RA reactor safety and economic operation. Statistical data about reactor operation and utilization are included as well. Introducing of the new 80% enriched fuel into the the reactor core enabled increase of the neutron flux, i.e. increase of its production capabilities. Safety and optimization analyses concerned with introduction of the new fuel have shown that the most safe and economic procedure was gradual introducing of the highly enriched fuel. This procedure was based on the concept of mixed core configuration with 2% and 80% enriched fuel elements. By applying this original concept the following significant savings were achieved: fuel elements savings, shortening of the annual period of reactor operation, savings in spent fuel casks, electric power savings, slowing down of heavy water degradation. [Serbo-Croat] Ovaj izvestaj sadrzi pregled o radu na razvoju eksploatacionih mogucnosti i povecanju sigurnosti i ekonomicnosti reaktora RA. Prilozeni su i statisticki podaci o radu i iskoriscenosti reaktora u 1978. godini. Uvodjenje novog 80% obogacenog goriva u jezgro reaktora omogucilo je povecanje neutronskog fluksa tj. povecanje njegovoh proizvodnih mogucnosti. Sigurnosne i optimizacione analize uvodjenja novog goriva pokazale su da je nasigurniji i najekonomicniji postupak postupnog uvodjenja visokoobogacenog goriva koji se zasniva na konceptu mesane resetke sa 2% i 80% obogacenim gorivom. Ovaj originalni koncept omogucio je da se postignu znatne ustede u gorivu, skracivanje godisnjeg rada reaktora, usteda sudova za odlaganje isluzenog goriva, usteda elektricne energije, usporavanje degradacije teske vode.

Study by AES, EELS Spectroscopy of electron Irradiation on InP and InPO4/InP in comparison with Monte Carlo simulation

International Nuclear Information System (INIS)

Lounis, Z; Bouslama, M; Hamaida, K; Abdellaoui, A; Ouerdane, A; Ghaffour, M; Berrouachedi, N; Jardin, C

2012-01-01

We give the great interest to characterise the InP and InPO 4 /InP submitted to electron beam irradiation owing to the Auger Electron Spectroscopy (AES) associated to both methods Electron Energy Loss Spectroscopy (EELS). The incident electron produces breaking of (In-P) chemical bonds. The electron beam even acts to stimulate oxidation of InP surface involving on the top layers. Other, the oxide InPO 4 developed on InP does appear very sensitive to the irradiation due to electron beam shown by the monitoring of EELS spectra recorded versus the irradiated times of the surface. There appears a new oxide thought to be In 2 O 3 . We give the simulation methods Casino (Carlo simulation of electron trajectory in solids) for determination with accuracy the loss energy of backscattered electrons and compared with reports results have been obtained with EELS Spectroscopy. These techniques of spectroscopy alone do not be able to verify the affected depth during interaction process. So, using this simulation method, we determine the interaction of electrons in the matter.

Young's Modulus of Wurtzite and Zinc Blende InP Nanowires.

Science.gov (United States)

Dunaevskiy, Mikhail; Geydt, Pavel; Lähderanta, Erkki; Alekseev, Prokhor; Haggrén, Tuomas; Kakko, Joona-Pekko; Jiang, Hua; Lipsanen, Harri

2017-06-14

The Young's modulus of thin conical InP nanowires with either wurtzite or mixed "zinc blende/wurtzite" structures was measured. It has been shown that the value of Young's modulus obtained for wurtzite InP nanowires (E [0001] = 130 ± 30 GPa) was similar to the theoretically predicted value for the wurtzite InP material (E [0001] = 120 ± 10 GPa). The Young's modulus of mixed "zinc blende/wurtzite" InP nanowires (E [111] = 65 ± 10 GPa) appeared to be 40% less than the theoretically predicted value for the zinc blende InP material (E [111] = 110 GPa). An advanced method for measuring the Young's modulus of thin and flexible nanostructures is proposed. It consists of measuring the flexibility (the inverse of stiffness) profiles 1/k(x) by the scanning probe microscopy with precise control of loading force in nanonewton range followed by simulations.

An ellipsometric measurement of optical properties for InP surfaces

International Nuclear Information System (INIS)

Liu, X.; Irene, E.A.; Hattangady, S.; Fountain, G.

1990-01-01

Several chemical cleaning procedures for InP surfaces have been studied using ellipsometry. The strong influence of cleaning on the optical properties of InP surfaces suggests that the measurements involved the formation of surface films. In order to determine the complex index of refraction for InP, a novel method which employs ellipsometry measurements of a thin nonabsorbing film on a substrate rather than measurements of a bare surface has been explored. From the knowledge of the refractive index for a series of thicknesses of films on a substrate, the complex refractive index value for the substrate can be determined. Plasma enhanced chemical vapor deposition (PECVD) SiO 2 and Si 3 N 4 films on InP have been used for this experiment, and the complex refractive index for InP has been determined to be 3.521 + i0.300 at the wavelength of 632.8 nm

Structure–function analysis and genetic interactions of the SmG, SmE, and SmF subunits of the yeast Sm protein ring

Science.gov (United States)

Schwer, Beate; Kruchten, Joshua; Shuman, Stewart

2016-01-01

A seven-subunit Sm protein ring forms a core scaffold of the U1, U2, U4, and U5 snRNPs that direct pre-mRNA splicing. Using human snRNP structures to guide mutagenesis in Saccharomyces cerevisiae, we gained new insights into structure–function relationships of the SmG, SmE, and SmF subunits. An alanine scan of 19 conserved amino acids of these three proteins, comprising the Sm RNA binding sites or inter-subunit interfaces, revealed that, with the exception of Arg74 in SmF, none are essential for yeast growth. Yet, for SmG, SmE, and SmF, as for many components of the yeast spliceosome, the effects of perturbing protein–RNA and protein–protein interactions are masked by built-in functional redundancies of the splicing machine. For example, tests for genetic interactions with non-Sm splicing factors showed that many benign mutations of SmG, SmE, and SmF (and of SmB and SmD3) were synthetically lethal with null alleles of U2 snRNP subunits Lea1 and Msl1. Tests of pairwise combinations of SmG, SmE, SmF, SmB, and SmD3 alleles highlighted the inherent redundancies within the Sm ring, whereby simultaneous mutations of the RNA binding sites of any two of the Sm subunits are lethal. Our results suggest that six intact RNA binding sites in the Sm ring suffice for function but five sites may not. PMID:27417296

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Investigation of material removal rate (MRR) and wire wear ratio (WWR) for alloy Ti6Al4 V exposed to heat treatment processing in WEDM and optimization of parameters using Grey relational analysis

International Nuclear Information System (INIS)

Altug, Mehmet

2016-01-01

The study examines the changes of the microstructural, mechanical and conductivity characteristics of the titanium alloy Ti6Al4 V as a result of heat treatment using wire electrical discharge machining, and their effect on machinability. By means of optical microscopy and scanning electron microscopy (SEM), analyses have been performed to determine various characteristics and additionally, microhardness and conductivity measurements have been conducted. Material removal rate (MRR) and wire wear ratio (WWR) values have been determined by using L18 Taguchi test design. The microstructures of the samples have been changed by thermal procedures. Results have been obtained by using the Grey relational analysis (GRA) optimization technique to solve the maximum MRR and minimum WWR values. The best (highest) MRR value is obtained from sample E which was water quenched in dual phase processing. The microstructure of this sample is composed of primary α and α' phases. The best (lowest) WWR value is obtained from sample A.

Investigation of material removal rate (MRR) and wire wear ratio (WWR) for alloy Ti6Al4 V exposed to heat treatment processing in WEDM and optimization of parameters using Grey relational analysis

Energy Technology Data Exchange (ETDEWEB)

Altug, Mehmet [Inonu Univ., Malatya (Turkey). Dept. of Machine and Metal Technologies

2016-11-01

The study examines the changes of the microstructural, mechanical and conductivity characteristics of the titanium alloy Ti6Al4 V as a result of heat treatment using wire electrical discharge machining, and their effect on machinability. By means of optical microscopy and scanning electron microscopy (SEM), analyses have been performed to determine various characteristics and additionally, microhardness and conductivity measurements have been conducted. Material removal rate (MRR) and wire wear ratio (WWR) values have been determined by using L18 Taguchi test design. The microstructures of the samples have been changed by thermal procedures. Results have been obtained by using the Grey relational analysis (GRA) optimization technique to solve the maximum MRR and minimum WWR values. The best (highest) MRR value is obtained from sample E which was water quenched in dual phase processing. The microstructure of this sample is composed of primary α and α' phases. The best (lowest) WWR value is obtained from sample A.

Structure-function analysis and genetic interactions of the SmG, SmE, and SmF subunits of the yeast Sm protein ring.

Science.gov (United States)

Schwer, Beate; Kruchten, Joshua; Shuman, Stewart

2016-09-01

A seven-subunit Sm protein ring forms a core scaffold of the U1, U2, U4, and U5 snRNPs that direct pre-mRNA splicing. Using human snRNP structures to guide mutagenesis in Saccharomyces cerevisiae, we gained new insights into structure-function relationships of the SmG, SmE, and SmF subunits. An alanine scan of 19 conserved amino acids of these three proteins, comprising the Sm RNA binding sites or inter-subunit interfaces, revealed that, with the exception of Arg74 in SmF, none are essential for yeast growth. Yet, for SmG, SmE, and SmF, as for many components of the yeast spliceosome, the effects of perturbing protein-RNA and protein-protein interactions are masked by built-in functional redundancies of the splicing machine. For example, tests for genetic interactions with non-Sm splicing factors showed that many benign mutations of SmG, SmE, and SmF (and of SmB and SmD3) were synthetically lethal with null alleles of U2 snRNP subunits Lea1 and Msl1. Tests of pairwise combinations of SmG, SmE, SmF, SmB, and SmD3 alleles highlighted the inherent redundancies within the Sm ring, whereby simultaneous mutations of the RNA binding sites of any two of the Sm subunits are lethal. Our results suggest that six intact RNA binding sites in the Sm ring suffice for function but five sites may not. © 2016 Schwer et al.; Published by Cold Spring Harbor Laboratory Press for the RNA Society.

Characteristics of withstanding radiation damage of InP crystals and devices

International Nuclear Information System (INIS)

Yamaguchi, Masafumi; Ando, Koshi

1988-01-01

Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Wurtzite InP nanowire arrays grown by selective area MOCVD

International Nuclear Information System (INIS)

Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

2010-01-01

InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

Science.gov (United States)

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 InP nanowire-based solar cells and photodetectors.

Measurement of zero power reactor dynamic response by cross correlation method; Merenje dinamickog odziva reaktora nulte snage kros korelacionom metodom

Energy Technology Data Exchange (ETDEWEB)

Kostic, Lj; Petrovic, M [Boris Kidric Institute of Nuclear Sciences Vinca, Beograd (Yugoslavia)

1969-07-15

Pulse response is comprehensive description of linear system dynamics. In this paper, cross correlation method was used for measuring the response of zero power reactor. Reactor system was perturbed by pseudo-random signal, which was cross correlated with the reactor signal responding to this perturbation on the digital ZUSE Z-23 computer. Cross-correlation functions were measured for different positions of stochastic oscillator and ionization chamber in the critical system. From numerical processing of performed experimental data, it was concluded that a more powerful faster computer would be needed for processing statistical experiments. In that case it would be possible to obtain information about spatial effects in the reactor and propagation of neutron waves in the multiplication medium. Impulsni odziv je potpuni opis dinamike linearnog sistema. Za merenje impulsnog odziva nultog reaktora, u ovom radu, koriscena je kros korelaciona metoda. Reaktorski sistem je perturbovan pseudoslucajnim signalom, koji je u digitalnom racunaru ZUSE Z-23 kroskorelisan sa signalom odziva reaktora na ove perturbacije. Merene su kroskorelacione funkcije za razlicite polozaje stohastickog oscilatora i jonizacione komore u kriticnom sistemu. Iz numericki obradjivanih eksperimenta namece se kao zakljucak da bi za obradu statistickih eksperimenata kod nultih reaktora bio potreban racunar veceg kapaciteta i brzine. U tom slucaju bi se iz ovako postavljenog eksperimenta moglo doci i do informacija o prostornim efektima u reaktoru i prostiranju neutronskih talasa kroz multiplikativnu sredinu. (author)

Action plan during reactor shutdown in October 1965, Annex 5; Prilog br. 5 - Plan radova u toku stajanja reaktora u mesecu oktobru 1965. godine

Energy Technology Data Exchange (ETDEWEB)

Nikolic, M [Reaktor RA, Odelenje odrzavanja, Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1965-12-15

The action plan of the division for reactor maintenance during reactor shutdown includes detailed list of tasks for mechanics, electronic and electrical equipment group during the reactor shutdown period in October 1965. It contains tasks for planned shutdown periods in September, August, July, May, April, March, and February 1965. [Serbo-Croat] Plan radova Odelenja odrzavanja reaktora RA za period stajanja reaktora u oktobru mesecu 1965. sadrzi detaljnu listu zadataka masinske grupe, elektro grupe i elektronske grupe. Ovaj prilog sadrzi i zadatke koji ce biti obavljeni tokom planiranih perioda kada je reaktor zaustavljen u septembru, avgustu, julu, junu, maju, aprilu, martu i februaru 1965.

Graphene enhanced field emission from InP nanocrystals.

Science.gov (United States)

Iemmo, L; Di Bartolomeo, A; Giubileo, F; Luongo, G; Passacantando, M; Niu, G; Hatami, F; Skibitzki, O; Schroeder, T

2017-12-08

We report the observation of field emission (FE) from InP nanocrystals (NCs) epitaxially grown on an array of p-Si nanotips. We prove that FE can be enhanced by covering the InP NCs with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the FE by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.

High Efficiency InP Solar Cells from Low Toxicity Tertiarybutylphosphine

Science.gov (United States)

Hoffman, Richard W., Jr.; Fatemi, Navid S.; Wilt, David M.; Jenkins, Phillip P.; Brinker, David J.; Scheiman, David A.

1994-01-01

Large scale manufacture of phosphide based semiconductor devices by organo-metallic vapor phase epitaxy (OMVPE) typically requires the use of highly toxic phosphine. Advancements in phosphine substitutes have identified tertiarybutylphosphine (TBP) as an excellent precursor for OMVPE of InP. High quality undoped and doped InP films were grown using TBP and trimethylindium. Impurity doped InP films were achieved utilizing diethylzinc and silane for p and n type respectively. 16 percent efficient solar cells under air mass zero, one sun intensity were demonstrated with Voc of 871 mV and fill factor of 82.6 percent. It was shown that TBP could replace phosphine, without adversely affecting device quality, in OMVPE deposition of InP thus significantly reducing toxic gas exposure risk.

Operation and maintenance of RA Reactor, Annual report 1977; Pogon i odrzavanje reaktora RA - Izvestaj o radu u 1977. godini

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M et al. [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1977-12-15

During 1977, the RA Reactor was operated at nominal power of 6.5 MW for 183 days. Total production was 28582 MWh which is 10% higher than planned. Second phase of introducing the 80% enriched fuel was fulfilled according to the plan. This means that the reactor core will be filled with highly enriched fuel in 1978. Refueling was done three time during the past year. After completing the first phase of the fuel exchange which was related mostly to reactor safety, the second phase will be devoted to the more efficient increase of neutron flux . This second phase is of utmost importance because higher neutron flux will provide better and more efficient reactor application from economic point of view. This will justify the application of the new more expensive highly enriched fuel. The budget for reactor operation and maintenance is hardly enough to cover the maintenance of the components and instrumentation. During 1977 there were no accidents related nor incidents related to the instrumentation or related to radiation protection. [Serbo-Croat] Reaktor RA je u toku 1977. godine ostvario rad od 28583 MWh odnosno 183 dana rada na nominalnoj snazi, sto u odnosu na plan rada iznosi 10% vise od planiranog. Druga faza uvodjenja 80% obogacenog goriva izvrsena je prema planu sto znaci da ce se punjenje jezgra reaktora 80% gorivom zavrsiti u toku 1978. godine. Izvrsene su tri izmene goriva. Posle isteka prvog dela prelaznog rezima koji je usmeren na maksimalnu sigurnost reaktora preci ce se na drugi deo usmeren na vece i brze povecanje neutronskog fluksa. Druga faza je od izuzetnog znacaja jer ce omoguciti bolje i znatno ekonomicnije koriscenje reaktora i opravdati upotrebu novog i skupljeg goriva. Sredstva za pogon i odrzavanje reaktora RA su jedva dovoljna za odrzavanje neophodnog nivoa opreme. Akcidenata u toku 1977. godine nije bilo ni sa opremom ni u pogledu zastite od zracenja.

Long-Term INP Measurements within the BACCHUS project

Science.gov (United States)

Schrod, Jann; Bingemer, Heinz; Curtius, Joachim

2016-04-01

The European research project BACCHUS (Impact of Biogenic versus Anthropogenic emissions on Clouds and Climate: towards a Holistic UnderStanding) studies the interactions between aerosols, clouds and the climate system, and tries to reconstruct pre-industrial aerosol and cloud conditions from data collected in pristine environments. The number concentration of Ice Nucleating Particles (INP) is an important, yet scarcely known parameter. As a partner of Work package 1 of BACCHUS we began in September 2014 to operate a globally spanned network of four INP sampling stations, which is the first of its kind. The stations are located at the ATTO observatory in the Brazilian Rainforest, the Caribbean Sea (Martinique), the Zeppelin Observatory at Svalbard in the Arctic, and in central Europe (Germany). Samples are collected routinely every day or every few days by electrostatic precipitation of aerosol particles onto Si substrates. The samples are stored in petri-slides, and shipped to our laboratory in Frankfurt, Germany. The number of ice nucleating particles on the substrate is analyzed in the isothermal static diffusion chamber FRIDGE by growing ice on the INP and photographing and counting the crystals. The measurements in the temperature range from -20°C to -30°C and relative humidities of 100-135% (with respect to ice) address primarily the deposition/condensation nucleation modes. Here we present INP and supporting aerosol data from this novel INP network for the first time.

Epitaxial growth of InP on SI by MOCVD

International Nuclear Information System (INIS)

Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

1988-01-01

The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

Susceptor and proximity rapid thermal annealing of InP

International Nuclear Information System (INIS)

Katz, A.; Pearton, S.J.; Geva, M.

1990-01-01

This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

A study of 1/f noise in InP grown by CBE

NARCIS (Netherlands)

Chen, X.Y.; Leijs, M.R.

1996-01-01

The origin of low-frequency noise in InP was studied experimentally by measuring the noise of InP layers grown by chemical beam epitaxy (CBE). Such InP layers are unintentionally doped, but of varying purity and always of n-type conductivity. We performed noise measurements at temperatures from 77

Influence of absorbers on the reactivity of the reactor; Odredjivanje uticaja apsorbera na reaktivnost reaktora

Energy Technology Data Exchange (ETDEWEB)

Martinc, R [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1961-12-15

Influence of absorbers on the reactivity of the reactor was calculated by two-group diffusion theory applying corrections for boundary conditions derived from the transport theory because diffusion theory in not applicable in the vicinity of boundary surfaces especially in case of strong absorbers. This report shows the calculations of central absorber efficiency in the core with and without reflector, and efficiency of the group of absorbers randomly placed in the core. Approximation method for determining the efficiency of the absorber is described as well as numerical verification of results. Effective absorber dimensions and the influence of gaps on the reactor dimensions are shown. [Serbo-Croat] Uticaj apsorbera na reaktivnost reaktora racunat je primenom difuzione dvogrupne teorije uz korekcije kod primene granicnih uslova koje daje transportna teorija za efektivne dimenzije apsorbera posto difuziona teorija ne moze da primeni u blizini granicnih povrsina posebno kod jakih apsorbera. U ovom izvestaju dati su proracuni efektivnosti centralnog apsorbera u reflektovanom u nereflektovanom reaktoru, efektivnosti grupe proizvoljno ubacenih apsorbera. Dat je i prikaz aproksimativne metode za odredjivanje efektivnosti apsorbera kao i numericka provera rezultata. Prikazane su efektivne dimenzije apsorbera kao i uticaj supljina na kriticne dimenzije reaktora.

The application of calorimetrical methods in nuclear technology and dosimetry

International Nuclear Information System (INIS)

Kott, J.; Krett, V.; Novotny, J.; Kovar, Z.; Jirousek, V.

1985-01-01

The report reviews theoretical as well as experimental research activities devoted to the possibilities of measuring reactor neutron and photon fields using thermic detectors based on calorimetric principle. There have been worked out theoretical principles of a reactor measuring probe intended in the first place to measuring neutron fluxes under operational temperatures inside power and research reactors, and a new philosophy of measurement has been elaborated. In addition, the report presents the experimental results as obtained on research reactors WWR-S, WWR-SM, RA, and Czechoslovak power reactor A-1 and GDR power reactor WWR-2. These results are given in connection with a newly proposed technique of reactor neutron field detection. The second part of the report presents results of works concerning beam dosimetry with the use of calorimeters

Damage formation and annealing in InP due to swift heavy ions

International Nuclear Information System (INIS)

Kamarou, A.; Wesch, W.; Wendler, E.; Klaumuenzer, S.

2004-01-01

Virgin and pre-damaged InP samples were irradiated at room temperature (RT) and at liquid nitrogen temperature (LNT) with different fluences of 140 MeV Kr, 390 MeV Xe and 600 MeV Au ions. The pre-damaging was performed with 600 keV Ge ions at LNT to obtain different damage levels. The samples were analysed by means of Rutherford backscattering spectrometry (RBS) in random and channelling geometry. A relatively weak damage accumulation in virgin InP and a very significant defect annealing in pre-damaged InP occurs due to 140 MeV Kr irradiation. The damaging of virgin InP with 390 MeV Xe and 600 MeV Au is much more efficient in comparison with that of 140 MeV Kr. Further, annealing of the pre-damaged InP due to 390 MeV Xe irradiation is hardly visible. At LNT InP appears to be much more radiation-resistant to swift heavy ion (SHI) irradiation than at RT. Our results show that during SHI irradiation of InP both damage formation and damage annealing occur simultaneously. Whether the first or the second one plays a more important role depends on the SHI mass and energy

Measurement of graphite and aluminium absorption cross sections via reactor period by danger coefficient method; Merenje apsorpcionih preseka grafita i aluminijuma preko periode reaktora metodom koeficijenta opasnosti

Energy Technology Data Exchange (ETDEWEB)

Petrovic, M; Markovic, V; Velickovic, Lj [Boris Kidric Institute of nuclear sciences, Vinca, Belgrade (Yugoslavia)

1963-07-01

Full text: This activity is a logical continuation of the experiment at the RA reactor during 1962 which was based on compensating the effect by means of control rod. Since results are given with significant errors, new method for measuring the absorption cross sections via reactor period. Experiment was done at the RB reactor which was particularly prepared for this type of experiments. Reactor power was from 50 mW to 2 W. Absorption cross sections were measured for two types of material: domestic graphite No.3 and French graphite 'Pachiney', and two types of aluminium. Total errors in applying this method are {+-} 5%, where the source of major part of error comes from uncertainty of the standard absorption power (previous method gave {+-} 10 do 55% ). Comparison of French graphite absorption cross section obtained via reactor period and via control rod showed approximate agreement with discrepancy of 5.4% which is considered within the precision of this method. Considering the accuracy of measurement results and reactor economy it is concluded that measuring absorption cross sections of samples via period of RB reactor is more favourable than measurements by control rod at the RA reactor. Pun tekst: Ovaj rad predstavlja logican nastavak eksperimenta na reaktoru RA u toku 1962. godine, koji je bazirao na kompenzaciji efekta pomocu kontrolne sipke. Kako su rezultati dati sa velikim greskama, to se prislo novom nacinu merenja apsorpsionih preseka preko periode reaktora. Eksperiment je radjen na reaktoru RB koji je specijalno pripremljen za ovu vrstu eksperimenta. Snaga reaktora se kretala od 50 mW do 2 W. Preko periode reaktora RB odredjeni su apsorpcioni preseci za dve vrste materijala i to: domaci grafit No.3 i francuski 'Pachiney', i dve vrste aluminijuma. Ukupne greske pri ovom nacimu merenja iznose oko {+-} 5%, gde glavni deo greske nosi neodredjenost apsorpcione moci standarda (ranija metoda je dala {+-} 10 do 55% ). Poredjenjem vrednosti apsorpcionih preseka

Experimental RA reactor operation with 80% enriched fuel - Program of experimental operation: a) Program of experimental operation with 80% enriched fuel at low power, b) contents of the experimental operation with 80% enriched fuel at higher power levels; Program probnog rada: a) Program probnog rada reaktora sa 80% obogacenim gorivom na malim snagama, b) sadrzaj programa probnog rada reaktora RA sa 80% obogacenim gorivom na vecim snagama

Energy Technology Data Exchange (ETDEWEB)

Martinc, R; Sotic, O; Skoric, M; Cupac, S; Bulovic, V; Maric, I; Marinkov, L [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1980-10-15

Highly enriched (80%) uranium oxide fuel was regularly used in the mixed reactor core with the 2% enriched fuel since 1976. The most important changes related to reactor operation, in comparison with the original design project were related to reactor core fuelling schemes. At the end of 1979 reactor was shutdown due to the corrosion coating noticed on some fuel elements and due to decrease quality of the heavy water. Subsequently the Sanitary inspector of Serbia has prohibited further reactor operation. Restart of the reactor will not be a simple continuation of operation. It is indispensable to perform complete experimental program including measurements of critical parameters at different power levels for the core with fresh 80% enriched fuel. The aim of this document is to obtain working permission and its contents are in agreement with the procedure demanded by the Safety Committee of the Institute. It includes results of optimization and safety analysis for the initial reactor core. Since the permission for restart is not obtained, a separate RA reactor safety report is prepared in addition to the program for experimental operation. This report includes: detailed program for reactor experimental operation with 80% enriched fuel in the core at low power levels, and contents of the experimental operation with 80% enriched fuel in the core at higher power levels. [Serbo-Croat] Od decembra 1976. godine redovno je korisceno 80% obogaceno gorivo u mesanoj resetki reaktorskog jezgra sa 2% obogacenim gorivom. Najvece izmene na reaktoru u odnosu na originalni projekat izvrsene su u nacinu rukovanja gorivom. Krajem marta 1979. godine obustavljen je rad reaktora usled naslaga na gorivnim elementima i loseg stanja teske vode. Naknadno je izdata zabrana za rad reaktora od strane Sanitarnog inspektora SR Srbije. Ponovno pustanje reaktora u rad nece biti jednostavan nastavak rada. Neophodno je da se izvede kompletan program merenja kriticnih parametara i drugih

Upper atmosphere research at INPE

International Nuclear Information System (INIS)

Clemesha, B.R.

1984-01-01

Upper atmosphere research at INPE is mainly concerned with the chemistry and dynamics of the stratosphere, upper mesosphere and lower thermosphere, and the middle thermosphere. Experimental work includes lidar observations of the stratospheric aerosol, measurements of stratospheric ozone by Dobson spectrophotometers and by balloon and rocket-borne sondes, lidar measurements of atmospheric sodium, and photometric observations of O, O 2 , OH and Na emissions, including interferrometric measurements of the OI6300 emission for the purpose of determing thermospheric winds and temperature. The airglow observations also include measurements of a number of emissions produced by the precipitation of energetic neutral particles generated by charge exchange in the ring current. Some recent results of INPE's upper atmosphere program are presented. (Author) [pt

Nonepitaxial Thin-Film InP for Scalable and Efficient Photocathodes.

Science.gov (United States)

Hettick, Mark; Zheng, Maxwell; Lin, Yongjing; Sutter-Fella, Carolin M; Ager, Joel W; Javey, Ali

2015-06-18

To date, some of the highest performance photocathodes of a photoelectrochemical (PEC) cell have been shown with single-crystalline p-type InP wafers, exhibiting half-cell solar-to-hydrogen conversion efficiencies of over 14%. However, the high cost of single-crystalline InP wafers may present a challenge for future large-scale industrial deployment. Analogous to solar cells, a thin-film approach could address the cost challenges by utilizing the benefits of the InP material while decreasing the use of expensive materials and processes. Here, we demonstrate this approach, using the newly developed thin-film vapor-liquid-solid (TF-VLS) nonepitaxial growth method combined with an atomic-layer deposition protection process to create thin-film InP photocathodes with large grain size and high performance, in the first reported solar device configuration generated by materials grown with this technique. Current-voltage measurements show a photocurrent (29.4 mA/cm(2)) and onset potential (630 mV) approaching single-crystalline wafers and an overall power conversion efficiency of 11.6%, making TF-VLS InP a promising photocathode for scalable and efficient solar hydrogen generation.

Surface photovoltage study of InP and Zn3P2

International Nuclear Information System (INIS)

Thurgate, S.M.; Lacuesta, T.D.; Huck, N.R.

1989-01-01

The surface photovoltage spectra of InP and Zn 3 P 2 were measured using a Kelvin probe to determine the contact potential difference between the sample and the probe as a function of the wavelength of illuminating light. The features in the resulting spectra were found to be sensitive to ion bombardment. The photovoltage spectra obtained from the InP differed from previously reported SPC spectra in that it showed clear evidence of surface states (or interfacial states) at 0.86 eV and 0.68 eV above VBM. It was found that the features in the spectrum of Zn 3 P 2 were reduced by ion bombardment, but not removed completely, whereas the features in the InP spectra were completely removed. Exposure of the ion bombarded urface to air restored the features of Zn 3 P 2 but only produced a small change in the spectrum of the InP. The loss of features in the InP spectra can be attributed to damage in the substrate caused by the ion bombardment even though the oxide layer was not removed before the damage occurred. Zn 3 P 2 was not as sensitive to ion damage as InP. (orig.)

Nuclear Reactor RA Safety Report, Vol. 1, Introduction; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 1, Uvod

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

Based on the agreement between governments of Socialist Federal Republic of Yugoslavia and USSR of January 28 1956, a contract was signed about construction of RA research reactor in the Boris Kidric Institute of nuclear sciences. Building of the RA reactor started in 1956, and has reached criticality in 1959. Since then it has been in almost permanent operation, except for five longer shutdown periods: in 1963 because of heavy water and primary coolant system contamination with cobalt; in 1970 because of transporting the heavy water to France for isotopic regeneration; in 1979/1980 and 1983 because of aluminium oxyhydrate deposition on the fuel element cladding in reactor active region; in 1985/1986 because of ventilation system reconstruction and construction of emergency core cooling system. RA reactor is a heavy water cooled and heavy water moderated research reactor. Since the beginning of its operation, 2% enriched metal uranium fuel was used. From 1976, 80% enriched uranium oxide fuel elements were used partially in some core regions and since 1981 the complete core was filled with this highly enriched fuel. RA reactor was designed to operate under normal conditions at 6.5 MW power and at 10 MW power under forced regime. As a powerful neutron source the reactor was meant to be used for research in the field of reactor and neutron physics, solid state physics, radiation chemistry, biology and radioactive isotopes production. RA reactor was build by Yugoslav companies based on USSR basic design project. Main components of the systems were produced in USSR. [Serbo-Croat] Na osnovu Sporazuma izmedju vlada SFRJ i SSSR od 28. januara 1956. godine, sklopljen je ugovor o izgradnji istrazivackog reaktora RA u Institutu za nuklearne nauke Boris Kidric u Vinci. Reaktor RA je poceo da se gradi 1956. godine, a kriticnost je postigao 1959. godine. Od tada je takoreci neprekidno bio u radu, izuzev u pet slucajeva duzeg stajanja: 1963. godine - zbog kontaminacije teske vode

Measurements at the RA Reactor related to the VISA-2 project - Part 1, Start-up of the RA reactor and measurement of new RA reactor core parameters; Fizicka merenja na reaktoru RA u vezi projekta VISA-2 - I deo, Pustanje u rad reaktora RA i merenje fizickih parametara novog jezgra reaktora RA

Energy Technology Data Exchange (ETDEWEB)

Markovic, H [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1962-07-15

The objective of the measurements was determining the neutron flux in the RA reactor core. Since the number of fuel channels is increased from 56 to 68 within the VISA-2 project, it was necessary to attain criticality of the RA reactor and measure the neutron flux properties. The 'program of RA reactor start-up' has been prepared separately and it is included in this report. Measurements were divided in two phases. First phase was measuring of the neutron flux after the criticality was achieved but at zero power. During phase two measurements were repeated at several power levels, at equilibrium xenon poisoning. This report includes experimental data of flux distributions and absolute values of the thermal and fast neutron flux in the RA reactor experimental channels and values of cadmium ratio for determining the neutron epithermal flux. Data related to calibration of regulatory rods for cold un poisoned core are included. [Serbo-Croat] Svrha merenja je odredjivanje neutronskog fluksa u reaktoru RA. S obzirom na uvecani broj tehnoloskih kanala of 56 na 68 u vezi projekta VISA-2, bilo je potrebno ponovo dovesti reaktora RA do kriticnosti i izvrsiti merenja karakteristika fluksa neutrona. Posebno je pripremljen 'program pustanja u pogon reaktora RA', koji je sadrzan u ovom dokumentu. Program merenja bio je podeljen na dve faze. Prva faza je merenje fluksa pre podizanju reaktora na nominalnu snagu. Slicna merenja vrsena su i na vecim snagama u drugoj fazi, pod uslovima ravnoteznog zatrovanja reaktora ksenonom, jer se tada pokazuju izvesne promene u odgovarajucim karakteristikama fluksa neutrona. Ovaj izvestaj sadrzi merene vrednosti raspodele fluksa i apsolutne vrednosti termalnih i brzih neutrona kao i kadmijumskih odnosa koji su korisceni za odredjivanje fluksa epitermalnih neutrona. Opisana je kalibracija regulacionih sipki za hladan nezatrovan reaktor.

Spectroscopic determination of valence band parameters in InP

International Nuclear Information System (INIS)

Lewis, R.A.; Lough, B.C.C.

2003-01-01

Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices.

Science.gov (United States)

Sanatinia, Reza; Berrier, Audrey; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri; Anand, Srinivasan

2015-10-16

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, 'black InP,' a property useful for solar cells. The realization of a conformal p-n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved.

Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

Science.gov (United States)

Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-12-10

Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

Regulations and instructions for RA reactor operation; Propisi i uputstva za pogon reaktora 'A'

Energy Technology Data Exchange (ETDEWEB)

NONE

1989-07-01

This regulatory guide consists of following 4 chapters: Description of the RA reactor, organization scheme, regulations for performing experiments; Regulations for staff on duty; Instructions for operating the vacuum systems, heavy water and helium systems; and evacuation in case of accident. [Serbo-Croat] Ovaj pravilnik sadrzi sledeca 4 poglavlja: Opis reaktora RA, sema organizacije rada, propisi za izvodjenje eksperimenata; Pravilnik za rad dezurnog osoblja; Uputstva za rada sa vakuum sistemima, sistemom teske vode, sistemom helijuma; evakuacija u slucaju udesa.

Seismic safety review mission Almaty WWR 10 MW research reactor Almaty, Kazakhstan. Final report

International Nuclear Information System (INIS)

Gurpinar, A.; Slemmons, D.B.; David, M.; Masopust, R.

1995-06-01

On the request of the government of Kazakhstan and within the scope of the TC project KAZ/0/004, a seismic safety review mission was conducted in Almaty, 8-19 May 1995 for the WWR 10 Mw research reactor. This review followed the fact finding mission which visited Almaty in November 1993 together with an INSARR mission. At that time some information regarding the seismotectonic setting of the site as well as the seismic capacity of the facility was obtained. This document presents the results of further work carried out on both the issues. It discusses technical session findings on geology, seismology, structures and equipments. In the end conclusions and recommendations of the mission are given. 4 refs, figs, tabs, 18 photos

Ultrathin film, high specific power InP solar cells on flexible plastic substrates

International Nuclear Information System (INIS)

Shiu, K.-T.; Zimmerman, Jeramy; Wang Hongyu; Forrest, Stephen R.

2009-01-01

We demonstrate ultrathin-film, single-crystal InP Schottky-type solar cells mounted on flexible plastic substrates. The lightly p-doped InP cell is grown epitaxially on an InP substrate via gas source molecular beam epitaxy. The InP substrate is removed via selective chemical wet-etching after the epitaxial layers are cold-welded to a 25 μm thick Kapton sheet, followed by the deposition of an indium tin oxide top contact that forms the Schottky barrier with InP. The power conversion efficiency under 1 sun is 10.2±1.0%, and its specific power is 2.0±0.2 kW/kg. The ultrathin-film solar cells can tolerate both tensile and compressive stress by bending over a <1 cm radius without damage.

TP53inp1 Gene Is Implicated in Early Radiation Response in Human Fibroblast Cells

Directory of Open Access Journals (Sweden)

Nikolett Sándor

2015-10-01

Full Text Available Tumor protein 53-induced nuclear protein-1 (TP53inp1 is expressed by activation via p53 and p73. The purpose of our study was to investigate the role of TP53inp1 in response of fibroblasts to ionizing radiation. γ-Ray radiation dose-dependently induces the expression of TP53inp1 in human immortalized fibroblast (F11hT cells. Stable silencing of TP53inp1 was done via lentiviral transfection of shRNA in F11hT cells. After irradiation the clonogenic survival of TP53inp1 knockdown (F11hT-shTP cells was compared to cells transfected with non-targeting (NT shRNA. Radiation-induced senescence was measured by SA-β-Gal staining and autophagy was detected by Acridine Orange dye and microtubule-associated protein-1 light chain 3 (LC3B immunostaining. The expression of TP53inp1, GDF-15, and CDKN1A and alterations in radiation induced mitochondrial DNA deletions were evaluated by qPCR. TP53inp1 was required for radiation (IR induced maximal elevation of CDKN1A and GDF-15 expressions. Mitochondrial DNA deletions were increased and autophagy was deregulated following irradiation in the absence of TP53inp1. Finally, we showed that silencing of TP53inp1 enhances the radiation sensitivity of fibroblast cells. These data suggest functional roles for TP53inp1 in radiation-induced autophagy and survival. Taken together, we suppose that silencing of TP53inp1 leads radiation induced autophagy impairment and induces accumulation of damaged mitochondria in primary human fibroblasts.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Science.gov (United States)

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Production of the sealed gamma-radiation sources of with iridium-192 radionuclide at the WWR-K research reactor

International Nuclear Information System (INIS)

Petukhov, V.K.; Chernayev, V.P.; Chabeyev, N.T.; Ermakov, E.L.; Chakrov, P.V.

2005-01-01

Full text: Conversion orientation of the WWR-K research reactor activity was established after renewal of its operation in 1997. A priority in reactor works was determined in the decision of tasks of practical use of nuclear technologies in a national economy in the next directions: in an industry, public health services and agriculture. The items of prime tasks: development and introduction of radiation technologies and manufacturing of radioisotopes for industry. This task included both scientific and technical program in the list of works of the Republican goals. At the WWR-K reactor within the framework of the this task solution the works on pilot production of the sealed sources of radioactive radiations (SSRR) with Ir-192 radionuclide for an industry of Republic of Kazakhstan were made. Organizational questions related to the Kazakhstan authority body and the regulating documentation were solved the first of all. The second stage was the development of the techniques of creating of devices providing an samples irradiation in reactor, control of sources sealing, measurements of the equivalent radiation doze from sources and high-quality support of SSRR manufacture over all technological way. At the third stage was made a little quantity SSRR with Ir-192 radionuclide, such as GIID-A1 (G6), for 'TEKOPS-660' Gammaray Projectors. This work served as experimental check of the decisions correctness, and has allowed to remove those lacks, to find out which it was possible only during direct manufacturing of radioactive sources. During performance of all these works the following was carried out: development and release of the documents and specifications regulating work on SSRR manufacture at the Institute of Nuclear Physics; personnel preparation and certification; preparation and equipment providing of reactor hot chambers by additional devices for work with irradiated iridium samples; development and manufacturing of the devices for iridium samples irradiation in

Heterostructures (CaSrBa)F2 on InP for Optoelectronics

National Research Council Canada - National Science Library

Pyshkin, Sergei

1995-01-01

Temperature-reduced MBE growth of group II-a fluorides onto InP( 100) surface as well as optimal cleaning and passivation procedures for InP wafers have been newly developed taking into account exsisting literature data...

All-optical signal processing using InP photonic-crystal nanocavity switches

DEFF Research Database (Denmark)

Yu, Yi; Vukovic, Dragana; Heuck, Mikkel

2014-01-01

In this paper, we present recent progress in experimental characterization of InP photonic-crystal nanocavity switches. Pump-probe measurements on an InP PhC H0 cavity show large-contrast ultrafast switching at low pulse energy. At large pulse energies, a large resonance shift passing across...... for the joint effects of fast carrier diffusion, slow surface and bulk recombination. Utilizin g the simple InP PhC nanocavity structure, we successfully dem onstrate 10-Gb/s RZ- OOK all-optical modulation with low energy consumption....

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

Science.gov (United States)

Kriegner, D; Wintersberger, E; Kawaguchi, K; Wallentin, J; Borgström, M T; Stangl, J

2011-10-21

High resolution x-ray diffraction is used to study the structural properties of the wurtzite polytype of InP nanowires. Wurtzite InP nanowires are grown by metal-organic vapor phase epitaxy using S-doping. From the evaluation of the Bragg peak position we determine the lattice parameters of the wurtzite InP nanowires. The unit cell dimensions are found to differ from the ones expected from geometric conversion of the cubic bulk InP lattice constant. The atomic distances along the c direction are increased whereas the atomic spacing in the a direction is reduced in comparison to the corresponding distances in the zinc-blende phase. Using core/shell nanowires with a thin core and thick nominally intrinsic shells we are able to determine the lattice parameters of wurtzite InP with a negligible influence of the S-doping due to the much larger volume in the shell. The determined material properties will enable the ab initio calculation of electronic and optical properties of wurtzite InP nanowires.

Radiation effects in heteroepitaxial InP solar cells

Science.gov (United States)

Weinberg, I.; Curtis, H. B.; Swartz, C. K.; Brinker, D. J.; Vargas-Aburto, C.

1993-01-01

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

Science.gov (United States)

Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

2017-12-15

We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

Photoacoustic investigation of doped InP using open cell configuration

NARCIS (Netherlands)

George, S.D.; Vallabhan, C.P.G.; Heck, M.J.R.; Radhakrishnan, P.; Nampoori, V.P.N.

2002-01-01

An open cell photoacoustic (PA) configuration was employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data were evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a

Control of persistent photoconductivity in nanostructured InP through morphology design

International Nuclear Information System (INIS)

Monaico, Ed; Postolache, V; Borodin, E; Lupan, O; Tiginyanu, I M; Ursaki, V V; Adelung, R; Nielsch, K

2015-01-01

In this paper, we show that long-duration-photoconductivity decay (LDPCD) and persistent photoconductivity (PPC) in porous InP structures fabricated by anodic etching of bulk substrates can be controlled through the modification of the sample morphology. Particularly, the PPC inherent at low temperatures to porous InP layers with the thickness of skeleton walls comparable with pore diameters is quenched in structures consisting of ultrathin walls produced at high anodization voltages. The relaxation of photoconductivity in bulk InP substrates, porous layers, and utrathin membranes is investigated as a function of temperature and excitation power density. The obtained results suggest that PPC in porous InP layers is due to porosity induced potential barriers which hinder the recombination of photoexcited carriers, while the photoconductivity relaxation processes in ultrathin membranes are governed by surface states. (paper)

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

Synthesis of colloidal InP nanocrystal quantum dots

International Nuclear Information System (INIS)

Sirbu, L.; Gutul, T.; Todosiciuc, A.; Danila, M.; Muller, R.; Sarua, A.; Webster, R.; Tiginyanu, I.M.; Ursaki, V.

2013-01-01

InP nano dots with the diameter of 4-10 nm were synthesized using sol-gel method. The nano dot dimensions were obtained using TEM, and we found the d(111) spacing to be 0.328 nm which agrees within 3% of the literature value. Prepared nanoparticles where characterized then by Raman spectroscopy and Xray diffraction. Performed measurements confirm good crystalline quality of obtained InP particles, which can be used as a basis for THz emitters, LED, and OLED displays. (authors)

InP quantum dots embedded in GaP: Optical properties and carrier dynamics

International Nuclear Information System (INIS)

Hatami, F.; Masselink, W.T.; Schrottke, L.; Tomm, J.W.; Talalaev, V.; Kristukat, C.; Goni, A.R.

2003-01-01

The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beam epitaxy forms quantum dots for InP coverage greater than 1.8 monolayers. Strong photoluminescence from the quantum dots is observed up to room temperature at about 2 eV; photoluminescence from the two-dimensional InP wetting layer is measured at about 2.2 eV. Modeling based on the 'model-solid theory' indicates that the band alignment for the InP quantum dots is direct and type I. Furthermore, low-temperature time-resolved photoluminescence measurements indicate that the carrier lifetime in the quantum dots is about 2 ns, typical for type-I quantum dots. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP quantum dots at normal pressure with the GaP X states lying about 30 meV higher than the Γ states in the InP quantum dots, but indicate that they become type II under hydrostatic pressures of about 1.2 GPa

1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

International Nuclear Information System (INIS)

Warren, C.E.; Wagner, B.F.; Anderson, W.A.

1986-01-01

The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

Science.gov (United States)

Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

2017-03-24

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

Status and future of the WWR-M research reactor in Kiev

Energy Technology Data Exchange (ETDEWEB)

Bazavov, D.A.; Gavrilyuk, V.I.; Kirischuk, V.I.; Kochetkov, V.V.; Lysenko, M.V.; Makarovskiy, V.N.; Scherbachenko, A.M.; Shevel, V.N.; Slisenko, V.I. [Institute for Nuclear Research, Kiev (Ukraine)

2001-07-01

Kiev WWR-M Research Reactor, operated at maximum power of 10 MW, was put into operation in 1960 and during its 40-years history has been used to perform numerous studies in different areas of science and technology. Due to a number of technical problems the Research Reactor, the only one in Ukraine, was shut down in 1993 and then put into operation in 1999 again. Now there is an intention to reconstruct Kiev Research Reactor. The upgraded Research Reactor would allow solving such problems as the safe operation of Ukrainian NPPs, radioisotope production and, naturally, fundamental and applied research. The main problem for the successful operation of Kiev Research Reactor is the management and storage of spent fuel at the site, since after core unloading the spent fuel storage appears to be practically completed. So it is absolutely necessary to ship the most part of the spent fuel for reprocessing and as soon as possible. Besides, there is a need to build up the new spent fuel storage, because the tank of available storage requires careful inspection for corrosion. (author)

InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

Science.gov (United States)

Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

2009-01-01

Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

Porous InP as piezoelectric matrix material in 1-3 magnetoelectric composite sensors

International Nuclear Information System (INIS)

Gerngross, M.-D.; Leisner, M.; Carstensen, J.; Foell, H.

2011-01-01

This work shows the results of the fabrication of semi-insulating piezoelectric porous InP structures by electrochemical etching and subsequent purely chemical post-etching in an isotropic HF, HNO 3 , EtOH and HAc containing electrolyte. The piezoelectric modulus d 14 of porous InP is measured to around |60| pm / V, which larger by a factor of 30 compared to bulk InP.

Radiation damage in SmS, SmSsub(1-x)Psub(x) and SmB6

International Nuclear Information System (INIS)

Morillo, J.; Bordier, G.; de Novion, C.H.; Senateur, J.P.; Jun, J.

1984-08-01

Large conductivity increases under 21 K electron or neutron irradiations are observed in SmS and SmSsub(1-x)Psub(x). It is shown that they are related to Sm defects. A possible mechanism is 4f electron delocalization around radiation defects. In SmB 6 , the low temperature resistivity increase desappears under 21 K irradiation. The thermal stability of the defects is also investigated up to room temperature

The temperature dependence of 1/f noise in InP

NARCIS (Netherlands)

Chen, X.Y.; Hooge, F.N.; Leijs, M.R.

1997-01-01

Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature

Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors

International Nuclear Information System (INIS)

Sato, Taketomo; Mizohata, Akinori; Fujino, Toshiyuki; Hashizume, Tamotsu

2008-01-01

In this paper, we report the electrochemical formation of the InP porous nanostructures and their feasibility for the application to the amperometric chemical sensors. Our two step electrochemical process consists of the pore formation on a (001) n-type InP substrate and the subsequent etching of pore walls caused by changing the polarity of the InP electrode in a HCl-based electrolyte. By applying the anodic bias to the InP electrode, the high-density array of uniform nanopores was formed on the surface. Next, the cathodic bias was applied to the porous sample to reduce the wall thickness by cathodic decomposition of InP, where the thickness of InP nanowall decreased uniformly along the entire depth of the porous layer. From the amperometric measurements of the porous electrode, it was found that the electrocatalytic activity was much higher than that of the planar electrode. Furthermore, the current sensitivity for the H 2 O 2 detection was much enhanced after the cathodic decomposition process. The InP porous nanostructure formed by the present process is one of the promising structures for the application to the semiconductor-based bio/chemical sensors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Determination of reactor parameters in a simulated RA reactor lattice by measuring the reactivity level of heavy water in D{sub 2}O moderated RB reactor; Odredjivanje reaktorskih parametara u simuliranoj resetki reaktora RA merenjem reaktivnosti nivoa teske vode u D{sub 2}O moderiranom reaktoru RB

Energy Technology Data Exchange (ETDEWEB)

Takac, S M; Markovic, H D; Dimitrijevic, Z B [Institute of Nuclear Sciences Vinca, Beograd (Serbia and Montenegro)

1974-07-01

Direct method for experimental determination of the neutron age {tau} in the reactor lattice is not developed. Fermi theory for determining {tau} by measuring the reactivity level of the heavy water can be applied for a limited number of reactor lattices. An attempt was made to apply this approach for a complex reactor core with side and upper reflector. As expected the obtained results were not satisfactory, and {tau} was determined by Dessauer formula which gives more realistic estimation of thermalization in the reactor cell. major discrepancies are resulting from the fact that the lower reflector was neglected. But it is possible to to determine {tau} for reactor core with reflectors by additional measurements of axial distribution and other experimental data for {tau}. This is quite tedious numerical procedure. Obtained experimental data for a number of reactor parameters are compared to the initial data of the RA reactor core showing very good agreement. [Serbo-Croat] Ekspeimentalna metoda za direktno odredjivanje starosti neutrona {tau}, u resetki reaktora do danas nije razvijena. Primenjena Fermijeova teorija za odredjivanje {tau} preko merenja reaktivnosti nivoa teske vode, ocigledno se moze koristiti samo na ogranicen spektar reaktorskih resetki. U ovom radu pokusano je da se vidi primenljivost iste u slozenom - bocno i odozdo - reflektovanom jezgru reaktora. Naravno dobijeni rezultati nisu zadovoljili, sto se i moglo ocekivati, pa je {tau} odredjen preko Dessauer-ove formule, sto daje daleko blizu sliku stvarnog stanja procesa termalizacije u celiji reaktora. Ocigledno vece neslaganje primenjene teorije dolazi od zanemarivanja donjeg reflektora u jezgru reaktora. Medjutim, dopnskim merenjem aksijalne raspodele i na osnovu ostalih eksperimentalnih podataka za {tau}, moguce je odrediti eksperimentalno reflektorski koeficijent za visestruko reflektovano jezgro reaktora, sto numericki predstavlja mukotrpan i dugotrajan rad na racunaru. Dobijeni

An improved large signal model of InP HEMTs

Science.gov (United States)

Li, Tianhao; Li, Wenjun; Liu, Jun

2018-05-01

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately. Project supported by the National Natural Science Foundation of China (No. 61331006).

Workshop on Heteroepitaxial InP Solar Cells

Science.gov (United States)

Weinberg, I.; Walters, R. W.

1993-01-01

In a generic sense, the justification for any sort of InP solar cell research applies, i.e. to take advantage of the inherently high radiation resistance and efficiency of InP solar cells. To be more specific, the approach is justified by its potential for significant cost reduction and the availability of greatly increased cell area afforded by substrates such as Si and Ge. The use of substrates, such as the latter two, would result in increased ruggedness, ease of handling, and improved manufacturability. The use of more rugged substrates would lead to a greatly increased capability for cell thinning leading to the desirable feature of reduced array weight.

RA reactor operation and maintenance in 1990 with comparative evaluation from 1986-1990, Part 1; Deo 1 - Pogon i odrzavanje nuklearnog reaktora RA u 1990. godini, uz uporedni pregled za period 1986-1990. godina

Energy Technology Data Exchange (ETDEWEB)

Sotic, O; Cupac, S; Sulem, B; Zivotic, Z; Vasovic, B; Sanovic, V [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1990-12-15

During the previous period RA reactor was not operated because the Committee of Serbian ministry for health and social care has cancelled the operation licence in August 1984. The reason was the non existing emergency cooling system and lack of appropriate filters in the special ventilation system. The new emergency cooling system and the reconstruction of the existing ventilation system were finished in 1989, the conditions for further reactor operation were fulfilled. In the meantime new licensing regulations adopted in 1988 were not demanding the mentioned conditions for reactors operated at power less than 10MW, RA reactor power being 6.5 MW. But the reactor could not be restarted due to planned renewal of the reactor instrumentation. It is planned to exchange the complete instrumentation by the end of 1991. Training program for the staff operating and maintaining the reactor components was prepared in 1985. Reconstruction, modification and construction of components demanded new documentation needed for further safe reactor operation. New version of RA reactor safety report was finished in 1986 according to the recommendations of IAEA and licensing regulations of Yugoslavia. In 1989, new documents were written covering regulations and instructions for reactor operation. The new reactor experimental loop was designed in 1986, and constructed and tested in 1990. All the reactor components were maintained by specific reactor services. Financing of the reactor remains a permanent problem. [Serbo-Croat] U proteklom periodu reaktor RA nije bio u pogonu zato sto je 30. jula 1984. godine Republicki komitet za zdravlje i socijalnu politiku republike Srbije, zabranio njegov rad zbog toga sto reaktor ne poseduje sistem za udesno hladjenje i ne poseduje odgovarajuce filtere u sistemu specijalne ventilacije. Radovi na izgradnji sistema za udesno hladjenje i rekonstrukciji postojeceg sistema specijalne ventilacije zavrseni su 1989. godine. Uslovi za nastavak rada reaktora

Wafer-scale self-organized InP nanopillars with controlled orientation for photovoltaic devices

International Nuclear Information System (INIS)

Sanatinia, Reza; Berrier, Audrey; Anand, Srinivasan; Dhaka, Veer; Perros, Alexander P; Huhtio, Teppo; Lipsanen, Harri

2015-01-01

A unique wafer-scale self-organization process for generation of InP nanopillars is demonstrated, which is based on maskless ion-beam etching (IBE) of InP developed to obtain the nanopillars, where the height, shape, and orientation of the nanopillars can be varied by controlling the processing parameters. The fabricated InP nanopillars exhibit broadband suppression of the reflectance, ‘black InP,’ a property useful for solar cells. The realization of a conformal p–n junction for carrier collection, in the fabricated solar cells, is achieved by a metalorganic vapor phase epitaxy (MOVPE) overgrowth step on the fabricated pillars. The conformal overgrowth retains the broadband anti-reflection property of the InP nanopillars, indicating the feasibility of this technology for solar cells. Surface passivation of the formed InP nanopillars using sulfur-oleylamine solution resulted in improved solar-cell characteristics. An open-circuit voltage of 0.71 V and an increase of 0.13 V compared to the unpassivated device were achieved. (paper)

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.

Science.gov (United States)

Li, Kun; Ng, Kar Wei; Tran, Thai-Truong D; Sun, Hao; Lu, Fanglu; Chang-Hasnain, Connie J

2015-11-11

The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

Oxidation of InP nanowires: a first principles molecular dynamics study.

Science.gov (United States)

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

A high-coverage nanoparticle monolayer for the fabrication of a subwavelength structure on InP substrates.

Science.gov (United States)

Kim, Dae-Seon; Park, Min-Su; Jang, Jae-Hyung

2011-08-01

Subwavelength structures (SWSs) were fabricated on the Indium Phosphide (InP) substrate by utilizing the confined convective self-assembly (CCSA) method followed by reactive ion etching (RIE). The surface condition of the InP substrate was changed by depositing a 30-nm-thick SiO2 layer and subsequently treating the surface with O2 plasma to achieve better surface coverage. The surface coverage of nanoparticle monolayer reached 90% by using O2 plasma-treated SiO2/InP substrate among three kinds of starting substrates such as the bare InP, SiO2/InP and O2 plasma-treated SiO2/InP substrate. A nanoparticle monolayer consisting of polystyrene spheres with diameter of 300 nm was used as an etch mask for transferring a two-dimensional periodic pattern onto the InP substrate. The fabricated conical SWS with an aspect ratio of 1.25 on the O2 plasma-treated SiO2/InP substrate exhibited the lowest reflectance. The average reflectance of the conical SWS was 5.84% in a spectral range between 200 and 900 nm under the normal incident angle.

Tumor protein 53-induced nuclear protein 1 (TP53INP1 enhances p53 function and represses tumorigenesis

Directory of Open Access Journals (Sweden)

Jeyran eShahbazi

2013-05-01

Full Text Available Tumor protein 53-induced nuclear protein 1 (TP53INP1 is a stress-induced p53 target gene whose expression is modulated by transcription factors such as p53, p73 and E2F1. TP53INP1 gene encodes two isoforms of TP53INP1 proteins, TP53INP1α and TP53INP1β, both of which appear to be key elements in p53 function. When associated with homeodomain-interacting protein kinase-2 (HIPK2, TP53INP1 phosphorylates p53 protein at Serine 46, enhances p53 protein stability and its transcriptional activity, leading to transcriptional activation of p53 target genes such as p21, PIG-3 and MDM2, cell growth arrest and apoptosis upon DNA damage stress. The anti-proliferative and pro-apoptotic activities of TP53INP1 indicate that TP53INP1 has an important role in cellular homeostasis and DNA damage response. Deficiency in TP53INP1 expression results in increased tumorigenesis; while TP53INP1 expression is repressed during early stages of cancer by factors such as miR-155. This review aims to summarize the roles of TP53INP1 in blocking tumor progression through p53-dependant and p53-independent pathways, as well as the elements which repress TP53INP1 expression, hence highlighting its potential as a therapeutic target in cancer treatment.

Activity of the Service for maintenance of mechanical equipment of the RA reactor - Report, Annex II; Prilog II - Rad sluzbe za odrzavanje masinske opreme reaktora RA u 1979. godini - Izvestaj -

Energy Technology Data Exchange (ETDEWEB)

Radivojevic, J [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1979-12-15

Service for mechanical components at the RA reactor includes: control and maintenance of utility components, mechanical workshop, hot cells and storage. Control and maintenance of main components covers: reactor core, heavy water system, technical water system, gas system. This service is responsible for the following auxiliary systems: transportation units; spent fuel storage pool; special ventilation system; personal protection appliances; hot cells. Maintenance of the reactor building, ventilation, heating, water supply, sewage, fire protection devices, gas and compressed air systems are included. [Serbo-Croat] Sluzba za masinsku opremu nuklearnog reaktora RA obuhvata: kontrolu i odrzavanje masinske opreme postrojenja, masinsku radionicu, vruce komore i prirucni magacin. Kontrola i odrzavanje osnovnih sistema obuhvata centralno telo reaktora, sistem teske vode, sistem tehnicke vode, gasni sistem. Pomocni sistemi koji spadaju u delatnost ove sluzbe su: transportna oprema, bazen za odlezavanje ozracenog goriva, sistem specijalne ventilacije, licna zastitna sredstva, vruce komore. Odrzavanje zgrade reaktora, ventilacije i grejanja, vodovoda i kanalizacije, opreme za protivpozarnu zastitu, instalacije gasa i komprimovanog vazduha su takode zadatak ove Sluzbe.

Amorphization and recrystallization in MeV ion implanted InP crystals

International Nuclear Information System (INIS)

Xiong, F.; Nieh, C.W.; Jamieson, D.N.; Vreeland, T. Jr.; Tombrello, T.A.

1988-01-01

A comprehensive study of MeV- 15 N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained

Experiment on search for neutron-antineutron oscillations using a projected UCN source at the WWR-M reactor

Science.gov (United States)

Fomin, A. K.; Serebrov, A. P.; Zherebtsov, O. M.; Leonova, E. N.; Chaikovskii, M. E.

2017-01-01

We propose an experiment on search for neutron-antineutron oscillations based on the storage of ultracold neutrons (UCN) in a material trap. The sensitivity of the experiment mostly depends on the trap size and the amount of UCN in it. In Petersburg Nuclear Physics Institute (PNPI) a high-intensity UCN source is projected at the WWR-M reactor, which must provide UCN density 2-3 orders of magnitude higher than existing sources. The results of simulations of the designed experimental scheme show that the sensitivity can be increased by ˜ 10-40 times compared to sensitivity of previous experiment depending on the model of neutron reflection from walls.

Systems and methods for advanced ultra-high-performance InP solar cells

Science.gov (United States)

Wanlass, Mark

2017-03-07

Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

Channeling study of laser-induced defect generation in InP and InAs

International Nuclear Information System (INIS)

Burdel', K.K.; Kashkarov, P.K.; Timoshenko, V.Yu.; Chechenin, N.G.

1992-01-01

Damage production in InP and InAs single crystals induced by a ruby-laser pulse irradiation with τ p =20 ms in the energy density region W=0.05-1.0 J/cm 2 is studied by the channeling and Rutherford backscattering techniques. The defect generation threshold was determined to be equal to 0.2 J/cm 2 and 0.55 J/cm 2 for InP and InAs crystals, respectively. Stoichiometric defects in InP crystals were observed at W>=0.5 J/cm 2 . The temperature fields in InP and InAs under laser irradiation were calculated. The experimental observations are considered as a result of a selective evaporation of the components from the melt

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

Science.gov (United States)

Jung, Mi; Kim, Jae Hun; Lee, Seok; Jang, Byung Jin; Lee, Woo Young; Oh, Yoo-Mi; Park, Sun-Woo; Woo, Deokha

2012-07-01

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Low temperature synthesis of InP nanocrystals

International Nuclear Information System (INIS)

Ung Thi Dieu Thuy; Tran Thi Thuong Huyen; Nguyen Quang Liem; Reiss, Peter

2008-01-01

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl 3 .4H 2 O and yellow P as the In and P precursors, respectively, and NaBH 4 as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy

Efficiency enhancement of InP nanowire solar cells by surface cleaning

NARCIS (Netherlands)

Cui, Y.; Wang, J.; Plissard, S.R.; Cavalli, A.; Vu, T.T.T.; Veldhoven, van P.J.; Gao, L.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Regulations for the maintenance division of the RA reactor, Annex 6; Prilog 6 - Pravilnik poslovanja Odelenja odrzavanja i remonta reaktora RA

Energy Technology Data Exchange (ETDEWEB)

Badrljica, R [Reaktor RA, Odelenje odrzavanja, Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1965-12-15

The regulations for the Division of reactor maintenance include the organizational scheme, tasks of the Division, and operation procedures for all the staff members. [Serbo-Croat] Pravilnik o radu Odelenja za odrzavanje reaktora RA sadrzi opis organizacione strukture sluzbe, zadataka Odelenja, organizacije rada, nacin poslovanja za sve saradnike Odelenja.

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Comparative modeling of InP solar cell structures

Science.gov (United States)

Jain, R. K.; Weinberg, I.; Flood, D. J.

1991-01-01

The comparative modeling of p(+)n and n(+)p indium phosphide solar cell structures is studied using a numerical program PC-1D. The optimal design study has predicted that the p(+)n structure offers improved cell efficiencies as compared to n(+)p structure, due to higher open-circuit voltage. The various cell material and process parameters to achieve the maximum cell efficiencies are reported. The effect of some of the cell parameters on InP cell I-V characteristics was studied. The available radiation resistance data on n(+)p and p(+)p InP solar cells are also critically discussed.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

Science.gov (United States)

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Measurement of the effective resonance integral of natural uranium; Merenje efektivnog rezonantnog integrala prirodnog urana

Energy Technology Data Exchange (ETDEWEB)

Markovic, V; Kocic, A [Institute of nuclear sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1965-12-15

Good understanding of the nuclear properties of the materials in the reactor core is essential for reactor operation. One of the fundamental properties is the resonance absorption of the fuel, which is directly included in the reactor calculation through resonance escape probability and influences the choice of the materials quality in the core. This paper describes the measurement of resonance absorption integral of the natural uranium as a function of the S/M ratio. Improved experiment planning and analysis of results, as well as improvement of the ROB-1 reactor oscillator device related to the interpretation of results and decrease of reactor drift variations during measurement enabled higher precision of results compared to previous experiments. Poznavanje osobina nuklearnih karakteristika materijala koji ulaze u jezgro nuklearnog reaktora predstavlja bitan faktor u njegovom rezimu rada. Jedna od osnovnih je svakako rezonantna apsorpcija goriva, cija velicina - preko faktora rezonantnog izbegavanja - direktno ulazi u proracun nuklearnih reaktora i utice na izbor kvaliteta materijala koji ga sacinjavaju. U radu se opisuje merenje rezonantnog apsorpcionog integrala prirodnog urana u funkciji odnosa S/M. Bolja postavka eksperimenta i interpretacija rezultata, s jedne strane, i poboljsanje uredjaja reaktorskog oscilatora ROB-1 /1/ u pogledu analize podataka i smanjenja promene drifta reaktora u toku merenja, s druge strane, daju znacaj ovom radu u pogledu dobijanja preciznijih rezultata u odnosu na ranije /2/ (author)

Activity of the Service for maintenance of mechanical structures of the RA reactor - Report for 1980, Annex II; Prilog II - Rad sluzbe za odrzavanje masinske opreme reaktora RA - Izvestaj za 1980. god

Energy Technology Data Exchange (ETDEWEB)

Radivojevic, J [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1980-12-15

Service for mechanical components at the RA reactor includes: control and maintenance of utility components, mechanical workshop, hot cells and storage. Control and maintenance of main components covers: reactor core, heavy water system, technical water system, gas system. This service is responsible for the following auxiliary systems: transportation units; spent fuel storage pool; special ventilation system; personal protection appliances; hot cells. Maintenance of the reactor building, ventilation, heating, water supply, sewage, fire protection devices, gas and compressed air systems are included. [Serbo-Croat] Sluzba za masinsku opremu nuklearnog reaktora RA obuhvata: kontrolu i odrzavanje masinske opreme postrojenja, masinsku radionicu, vruce komore i prirucni magacin. Kontrola i odrzavanje osnovnih sistema obuhvata centralno telo reaktora, sistem teske vode, sistem tehnicke vode, gasni sistem. Pomocni sistemi koji spadaju u delatnost ove sluzbe su: transportna oprema, bazen za odlezavanje ozracenog goriva, sistem specijalne ventilacije, licna zastitna sredstva, vruce komore. Odrzavanje zgrade reaktora, ventilacije i grejanja, vodovoda i kanalizacije, opreme za protivpozarnu zastitu, instalacije gasa i komprimovanog vazduha su takode zadatak ove Sluzbe.

Low temperature synthesis of InP nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Ung Thi Dieu Thuy [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); Tran Thi Thuong Huyen [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam); National University of Thai Nguyen, 2 Luong Ngoc Quyen, Thai Nguyen (Viet Nam); Nguyen Quang Liem [Institute of Materials Science (IMS), Vietnamese Academy of Science and Technology (VAST), 18 Hoang Quoc Viet, Cau Giay, Hanoi (Viet Nam)], E-mail: liemnq@ims.vast.ac.vn; Reiss, Peter [DSM/INAC/SPrAM, UMR 5819 CEA-CNRS-Universite Joseph Fourier/LEMOH, CEA Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

2008-12-20

We present a simple method for the chemical synthesis of InP nanocrystals, which comprises several advantages: (i) the use of simple reagents, namely InCl{sub 3}.4H{sub 2}O and yellow P as the In and P precursors, respectively, and NaBH{sub 4} as the reducing agent in a mixed solvent of ethanol and toluene; (ii) a short reaction time (1-5 h) and low temperature (<75 deg. C); (iii) a high reaction yield approaching 100%. InP NCs in the zinc-blende structure have been obtained as confirmed by powder X-ray diffraction and Raman scattering measurements. Their mean size of 4 nm has been determined by transmission electron microscopy, Raman scattering and absorption spectroscopy.

Palladium nanoparticles on InP for hydrogen detection

Directory of Open Access Journals (Sweden)

Zdansky Karel

2011-01-01

Full Text Available Abstract Layers of palladium (Pd nanoparticles on indium phosphide (InP were prepared by electrophoretic deposition from the colloid solution of Pd nanoparticles. Layers prepared by an opposite polarity of deposition showed different physical and morphological properties. Particles in solution are separated and, after deposition onto the InP surface, they form small aggregates. The size of the aggregates is dependent on the time of deposition. If the aggregates are small, the layer has no lateral conductance. Forward and reverse I-V characteristics showed a high rectification ratio with a high Schottky barrier height. The response of the structure on the presence of hydrogen was monitored.

Results of environmental radiation monitoring and meteorology measurements (material prepared for obtaining the licence for RA reactor experimental operation); Rezultati merenja zracenja u okolini i rezultati meteoroloskih merenja (materijal pripremljen radi dobijanja dozvole za pustanje Reaktora RA u probni rad)

Energy Technology Data Exchange (ETDEWEB)

NONE

1980-10-15

According to the demands for obtaining the licence for restarting the Ra reactor and the experimental operation this document includes the radiation monitoring measured data in the working space and environment of the RA reactor, i.e. Boris Kidric Institute. The meteorology measured data are included as well. All the measurements are performed according to the radiation protection program applied actually from the first reactor start-up at the end of 1959. [Serbo-Croat] Saglasno zahtevu za dobijanje dozvole za ponovno pustanje u probni rad reaktora RA, ovaj dokument sadrzi rezultate merenja zracenja u okolini (radnoj i zivotnoj) reaktora RA odnosno instituta 'Boris Kidric' kao i podatke o meteoroloskim merenjima. Sve merenja rade se prema programu mera zastite od zracenja koje se sprovode prakticno od prvog pustanja reaktora u rad krajem 1959. godine.

Instructions for RA reactor decontamination - Annex 10; Prilog 10 - Uputstvo za dekontaminaciju Reaktora RA

Energy Technology Data Exchange (ETDEWEB)

NONE

1963-12-15

Instructions for RA reactor decontamination includes: action plan for decontamination of the heavy water system by 7% water solution of H{sub 3}PO{sub 4} + 2% CrO{sub 3} acid; description of the preparatory work including calculation of the pipes volume and installation of special pipes; detailed instructions for decontamination procedure. [Serbo-Croat] Uputstvo za dekontaminaciju Reaktora RA sadrzi: plan operacija za dekontaminaciju sistema teske vode 7% vodenim rastvorom kiseline H{sub 3}PO{sub 4} + 2% CrO{sub 3}; opis pripremnih radova ukljucujuci proracun zapremine covovoda i montiranje posebnih cevovoda; detaljno uputstvo za izvodjenje operacija pri dekontaminaciji.

Aqueous bromine etching of InP: a specific surface chemistry

Energy Technology Data Exchange (ETDEWEB)

Causier, A.; Bouttemy, M.; Gerard, I.; Aureau, D.; Vigneron, J.; Etcheberry, A. [Institut Lavoisier de Versailles, Versailles-Saint-Quentin University, UMR CNRS 8180, 45 Av. des Etats-Unis, 78035 Versailles (France)

2012-06-15

The n -InP behaviour in HBr (0.1-1.0 M)/Br{sub 2} (1.25 x 10{sup -2}M) aqueous solutions is studied by AAS, XPS and SEM-FEG. Indium AAS-titrations of the HBr/Br{sub 2} solutions demonstrate that InP undergoes an etching mechanism whatever the HBr/Br{sub 2} formulation. The etching process is always linear with time but its rate depends on the HBr concentration. XPS analyses permit to link the apparent slow-down of the dissolution process when decreasing the HBr molarity from 1.0 M to 0.1 M to the presence of a mixed (In,P){sub ox} oxide layer on the surface. Therefore, the dissolution process of InP in HBr/Br{sub 2} solution appears to be ruled by the surface chemical state (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Nuclear Reactor RA Safety Report, Vol. 16, Maximum hypothetical accident; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 16, Maksimalni hipoteticki akcident

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-15

Fault tree analysis of the maximum hypothetical accident covers the basic elements: accident initiation, phase development phases - scheme of possible accident flow. Cause of the accident initiation is the break of primary cooling pipe, heavy water system. Loss of primary coolant causes loss of pressure in the primary circuit at the coolant input in the reactor vessel. This initiates safety protection system which should automatically shutdown the reactor. Separate chapters are devoted to: after-heat removal, coolant and moderator loss; accident effects on the reactor core, effects in the reactor building, and release of radioactive wastes. [Serbo-Croat] Sema granjanja za maksimalni hipoteticki akcident obuhvata osnovne elemente: pocetak akcidenta, faze razvoja akcidenta i stablo razvoja - sema potencijalnih akcidentnih tokova. Uzrok pocetka akcidenta je pucanje cevovoda primarnog rashladnog sistema jezgra, sistema teske vode. Gubitak primarnog hladioca izaziva pad pritiska u primarnom sistemu hladjenja na ulazu u reaktorski sud. Ovaj poremecaj pobudjuje sigurnosno kolo zastite koje automatski treba da prekine rad reaktora. Posebno je razmatrano generisanje zaostale snage, isticanje hladioca i moderatora, efekti akcidenta na jezgro, efekti u zgradi reaktora, oslobadjanje radioaktivnih produkata.

Diameter Dependence of Planar Defects in InP Nanowires.

Science.gov (United States)

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

Silicon doped InP as an alternative plasmonic material for mid-infrared

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

2016-01-01

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

ESCA and electron diffraction studies of InP surface heated under As molecular beam exposure

International Nuclear Information System (INIS)

Sugiura, Hideo; Yamaguchi, Masafumi; Shibukawa, Atsushi

1983-01-01

Chemical composition of InP substrate surface heattreated under As molecular beam exposure in an ultrahigh vacuum chamber was studied with ESCA, and surface reconstruction of the substrate was examined by in-situ electron diffraction. The InP substrate heated under the exposure of As molecular beam has mirror surface up to 590 0 C while the surface of InP heated above 400 0 C in vacuum is roughened. The ESCA study shows that thin InAs layer (thickness 0 C under the exposure of As. The electron diffraction study indicates that the InP is cleaned at about 500 0 C in As pressures of 10 -7 - 10 -5 Torr. The InP surface is prevented from thermally decomposing by the coverage of the InAs layer, which may be formed through the following process: 2InPO 4 + As 4 → 2InAs + P 2 O 5 + As 2 O 3 . (author)

Electrical properties of bulk InP synthesized by modified horizontal Bridgman method

International Nuclear Information System (INIS)

Pak, K.; Matsui, M.; Fukuhara, H.; Nishinaga, T.; Nakamura, T.; Yasuda, Y.

1986-01-01

High purity polycrystalline InP has been required for preparation of starting materials in LEC pulling. Usually, these materials are synthesized by the horizontal Bridgman (HB) or gradient freeze (GF) method. The major problem for InP synthesis has been attributed to silicon contamination during the growth, as shown by several workers. In a previous paper, the authors proposed a model in which the silicon contamination would occur due to the transport of SiO and In/sub 2/O gas species from the In-P melt to the phosphorus region by the reaction of the melt with the quartz boat in the HB growth system and suggested that the Si concentration in the In-P melt would have an intimate correlation with the temperature in the phosphorus region. However, the effect of the temperature in the phosphorus region on the electrical properties has not been studied in details as of yet. In this note, a modified horizontal Bridgman (MHB) method was developed to reduce the residual donor impurities, and the reduction mechanism is discussed

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials

Directory of Open Access Journals (Sweden)

Ma Li

2011-01-01

Full Text Available Abstract A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics. PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials.

Science.gov (United States)

Zhou, Tao; Cheng, Dandan; Zheng, Maojun; Ma, Li; Shen, Wenzhong

2011-03-31

A novel Co/InP magnetic semiconductor nanocomposite was fabricated by electrodeposition magnetic Co nanoparticles into n-type porous InP templates in ethanol solution of cobalt chloride. The content or particle size of Co particles embedded in porous InP increased with increasing deposition time. Co particles had uniform distribution over pore sidewall surface of InP template, which was different from that of ceramic template and may open up new branch of fabrication of nanocomposites. The magnetism of such Co/InP nanocomposites can be gradually tuned from diamagnetism to ferromagnetism by increasing the deposition time of Co. Magnetic anisotropy of this Co/InP nanocomposite with magnetization easy axis along the axis of InP square channel was well realized by the competition between shape anisotropy and magnetocrystalline anisotropy. Such Co/InP nanocomposites with adjustable magnetism may have potential applications in future in the field of spin electronics.PACS: 61.46. +w · 72.80.Tm · 81.05.Rm · 75.75. +a · 82.45.Aa.

Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon.

Science.gov (United States)

Li, Kun; Sun, Hao; Ren, Fan; Ng, Kar Wei; Tran, Thai-Truong D; Chen, Roger; Chang-Hasnain, Connie J

2014-01-08

Nanoscale self-assembly offers a pathway to realize heterogeneous integration of III-V materials on silicon. However, for III-V nanowires directly grown on silicon, dislocation-free single-crystal quality could only be attained below certain critical dimensions. We recently reported a new approach that overcomes this size constraint, demonstrating the growth of single-crystal InGaAs/GaAs and InP nanoneedles with the base diameters exceeding 1 μm. Here, we report distinct optical characteristics of InP nanoneedles which are varied from mostly zincblende, zincblende/wurtzite-mixed, to pure wurtzite crystalline phase. We achieved, for the first time, pure single-crystal wurtzite-phase InP nanoneedles grown on silicon with bandgaps of 80 meV larger than that of zincblende-phase InP. Being able to attain excellent material quality while scaling up in size promises outstanding device performance of these nanoneedles. At room temperature, a high internal quantum efficiency of 25% and optically pumped lasing are demonstrated for single nanoneedle as-grown on silicon substrate. Recombination dynamics proves the excellent surface quality of the InP nanoneedles, which paves the way toward achieving multijunction photovoltaic cells, long-wavelength heterostructure lasers, and advanced photonic integrated circuits.

Evaluation of Radioisotope Production Process of 153Sm and 153Sm-EDTMP Radiopharmaceuticals

International Nuclear Information System (INIS)

Kadarisman; Sri Hastini; Yayan Tahyan; Abidin; Dadang Hafid; Enny Lestari

2007-01-01

Experiments on the process of 153 Sm radioisotope and labeling of 153 Sm-EDTMP radiopharmaceuticals were carried out. This experiments included preparation of Sm 2 O 3 target, dissolution of post irradiation, determination of radioactivity concentration of 153 Sm radioisotope, radionuclide purity, EDTMP labeling, determination of radiochemical purity and pH. In these experiments the total radioactivity 153 Sm product is round about 2845.83 mCi to 36963.31 mCi, or with the radioactivity concentration between 474 mCi/ml to 6160.55 mCi/ml in the SmCl 3 solution form, each its volume is 6.0 ml, and the samarium content is 5.76 mg/ml, and the radionuclide purity of 153 Sm is 100 %. All of the 153 Sm- EDTMP radiopharmaceuticals product are fulfilled requirements the radioactivity concentration, Sm content, radiochemical purity and pH. The radioactivity concentration of 153 Sm-EDTMP radiopharmaceuticals is 37.50 mCi/ml (minimum) to 283.50 mCi/ml (highest). The pH 7.5 were 8 products, and the rest are pH 8.5. Radiochemical purity of 153 Sm-EDTMP are round about 90.00 % to 99.44 %. (author)

Independent CO{sub 2} loop for cooling the samples irradiated in the RA reactor vertical experimental channels, Task 2.50.05; Nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u vertikalnim eksperimentalnim kanalima reaktora RA, Zad. 2.50.05

Energy Technology Data Exchange (ETDEWEB)

Stojic, M; Pavicevic, M

1964-07-01

This report contains the following volumes V and VI of the Project 'Independent CO{sub 2} loop for cooling the samples irradiated in RA reactor vertical experimental channels': Design project of the dosimetry control system in the independent CO{sub 2} loop for cooling the samples irradiated in the RA reactor vertical experimental channels, and Safety report for the Independent CO{sub 2} loop for cooling the samples irradiated in the RA reactor vertical experimental channels. Ovaj izvestaj sadrzi dva albuma zadatka 'Nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u vertikalnim eksperimentalnim kanalima reaktora RA', Zad. 2.50.05: Album V: Predprojekat sistema dozimetrijske kontrole u nezavisnom kolu CO{sub 2} za hladjenje uzoraka ozracivanih u VEK reaktora RA i Album VI: Izvestaj o sigurnosti za nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u VEK reaktora RA.

RA Research reactor, Part 1, Operation and maintenance of the RA nuclear reactor for 1986; Istrazivacki nuklearni reaktor RA, deo 1, pogon i odrzavanje nukleanog reaktora RA u 1986. godini

Energy Technology Data Exchange (ETDEWEB)

Sotic, O; Martinc, R; Cupac, S; Sulem, B; Badrljica, R; Majstorovic, D; Sanovic, V [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1986-12-01

In order to enable future reliable operation of the RA reactor, according to new licensing regulations, three major tasks started in 1984 were fulfilled: building of the new emergency system, reconstruction of the existing ventilation system, and reconstruction of the power supply system. Simultaneously in 1985/1986 renewal of the instrumentation and reconstruction of the system for handling and storage of the spent fuel in the reactor building have started. Design projects for these tasks are almost finished and the reconstruction of both systems is expected to be finished until 1988 and mid 1989 respectively. RA reactor Safety report was finished according to the recommendations of the IAEA. Investments in 1986 were used for 8000 kg of heavy water, maintenance of reactor systems and supply of new components, reconstruction of reactor systems. This report includes 8 annexes concerning reactor operation, activities of services and financial issues. [Serbo-Croat] Sa ciljem da se obezbedi pouzdan rad reaktora RA a u skladu sa zakonskim propisima, zavrsena su tri velika zahvata zapoceta 1984: izgradnja novog sistema za udesno hladjenje, rekonstrukcija postojeceg sistema za ventilaciju, i modernizacija reaktorske instrumentacije. Istovremeno tokom 1985/1986. zapoceta je modernizacija instrumentacije i rekonstrukcija sistema za rukovanje i skladistenje iskoriscenog goriva u zgradi reaktora. Projekti za navedene radove su vec zavrseni ili su u zavrsnoj fazi, a ocekuje se da ce rekonstrukcija oba sistema biti zavrsena do kraja 1988. odnosno sredine 1989. godine. Izrada izvestaja o sigurnosti reaktora RA, prema preporukama MAAE zavrsena je 1986. Investiciona ulaganja na reaktoru Ra u 1986. iskoriscena su za: nabavku 8000 kg teske vode, za investiciono odrzavanje reaktorskih sistema i nabavku opreme, za rekonstrukciju reaktorskih sistema. Ovaj izvestaj sadrzi 8 priloga koji opisuju rad reaktora, rad strucnih sluzbi i finansiranje.

Room-temperature annealing of Si implantation damage in InP

International Nuclear Information System (INIS)

Akano, U.G.; Mitchell, I.V.

1991-01-01

Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

Selective-area vapour-liquid-solid growth of InP nanowires

International Nuclear Information System (INIS)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J

2009-01-01

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO 2 mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO 2 mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Selective-area vapour-liquid-solid growth of InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Dalacu, Dan; Kam, Alicia; Guy Austing, D; Wu Xiaohua; Lapointe, Jean; Aers, Geof C; Poole, Philip J, E-mail: dan.dalacu@nrc-cnrc.gc.c [Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, K1A 0R6 (Canada)

2009-09-30

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO{sub 2} mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO{sub 2} mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

Application of non-destructive testing and in-service inspections to research reactors and preparation of ISI programme and manual for WWR-C research reactors

International Nuclear Information System (INIS)

Khattab, M.

1996-01-01

The present report gives a review on the results of application of non-destructive testing and in-service inspections to WWR-C reactors in different countries. The major problems related to reactor safety and the procedure of inspection techniques are investigated to collect the experience gained from this type of reactors. Exchangeable experience in solving common problems in similar reactors play an important role in the effectiveness of their rehabilitation programmes. 9 figs., 4 tabs

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

Science.gov (United States)

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Experimental study of space dependent nuclear reactor kinetics - Progress report; Eksperimentalno proucavanje prostorno zavisne kinetike nuklearnih reaktora - Izvestaj o napredovanju

Energy Technology Data Exchange (ETDEWEB)

Obradovic, D; Petrovic, M [Institute of nuclear sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1966-11-15

This paper describes experimental study of space-time behaviour of nuclear reactors by local complex-periodic perturbation of the absorption cross section and by measuring the local reactor response to this perturbation. Perturbation was done by BOR-1 fast oscillator. Cross correlation between the response and the perturbation was done numerically after completing the measurement by using digital computer. Obtained experimental results are preliminary and are measured with significant errors which were analysed in this paper. Results show qualitative agreement with those obtained by theoretical model. This paper is the first progress report in this field in our country. U radu je opisan eksperimentalni prilaz proucavanju prostorno-vremenskog ponasanja nuklearnih reaktora, vrseci lokalnu slozeno-periodicnu perturbaciju apsorpcionog preseka i mereci lokalni odziv reaktora na tu perturbaciju. Perturbacija je vrsena brzim oscilatorom BOR-1. Kroskorelacija izmedju odziva i perturbacije vrsena je numericki posle obavljenog merenja upotrebom digitalne racunske masine. Dobijeni eksperimentalni rezultati imaju preliminarni karakter i odredjeni su sa znatnim eksperimentalnim greskama koje su, u radu analizirane. Izlozeni rezultati pokazuju kvalitativna slaganja sa teorijski dobijenim modelom. Ovaj rad predstavlja prvi izvestaj o napredovanju na ovoj problematici kod nas (author)

InP HEMT Integrated Circuits for Submillimeter Wave Radiometers in Earth Remote Sensing

Science.gov (United States)

Deal, William R.; Chattopadhyay, Goutam

2012-01-01

The operating frequency of InP integrated circuits has pushed well into the Submillimeter Wave frequency band, with amplification reported as high as 670 GHz. This paper provides an overview of current performance and potential application of InP HEMT to Submillimeter Wave radiometers for earth remote sensing.

Electronic and magnetic properties of digitally Ti doped InP: A first principles study

International Nuclear Information System (INIS)

Rahman, Gul; Cho, Sunglae; Hong, Soon Cheol

2008-01-01

Using the full-potential linearized augmented plane wave method within the generalized gradient approximation, we study the electronic and the magnetic properties of digitally Ti doped InP. It is quite interesting that digitally Ti-doped InP system shows half metallic ferromagnetism even though both bulk zinc blende TiP and InP are paramagnetic. We also investigate the electronic and the magnetic properties as a function of spacer layer thickness. Their properties such as exchange coupling constant and atomic projected density of states are more or less independent of the InP thickness. Spin density contour maps indicate that the spin-polarization is confined within the TiP plane. The system may show a highly anisotropic property in spin-polarized transport. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Twin and grain boundary in InP: A synchrotron radiation study

International Nuclear Information System (INIS)

Han, Y.; Liu, X.; Jiao, J.; Lin, L.; Jiang, J.; Wang, Z.; Tian, Y.

1998-01-01

Experimentally observed X-ray reflectivity curves show bi-crystal(twin) characteristics. The study revealed that there was defect segregation at the twin boundary. Stress was relaxed at the edge of the boundary. Relaxation of the stress resulted in formation of twin and other defects. As a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. So a twin model was proposed to explain the experimental results. Stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in LEC InP crystal growth. Twins on (111) face in LEC InP crystal were studied. Experimental evidence of above mentioned twin model and suggestions on how to get twin-free LEC InP single crystals will be discussed

InP on SOI devices for optical communication and optical network on chip

Science.gov (United States)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

InAs quantum wires on InP substrate for VCSEL applications

OpenAIRE

Lamy , Jean-Michel; Paranthoën , Cyril; Levallois , Christophe; Nakkar , Abdulhadi; Folliot , Hervé; Dehaese , Olivier; Le Corre , Alain; Loualiche , Slimane; Castany , Olivier; Dupont , Laurent

2008-01-01

International audience; Quantum dash based vertical cavity surface emitting lasers (VCSEL) on InP substrate are presented. Single and close stacking layers were successfully grown with molecular beam epitaxy. Optimized quantum dash layers exhibit a strong polarized 1.55 µm photoluminescence along the [1-10] crystallographic axis. Continuous wave laser emission is demonstrated at room temperature for the first time on a quantum dash VCSEL structure on InP susbtrate. The quantum dash VCSEL lase...

Magnetic circular dichroism study of electron-irradiation induced defects in InP

International Nuclear Information System (INIS)

Gislason, H.P.

1989-01-01

A strong magnetic circular dichroism (MCD) absorption band centered at 1.07 eV in electron irradiated InP is reported. Temperature and magnetic field dependence of the signal reveal that the centre giving rise to this band is a spin triplet. By simulating neutral and reverse bias conditions of junction measurements through a careful choice of irradiation dose and starting material, the MCD band is shown to have an annealing behaviour closely resembling that of the majority carrier traps which control the Fermi level position in n- and p-type InP. The 1.07 eV MCD band represents the first magneto-optical signal connected with this family of complex irradiation-induced defects in InP. (author) 19 refs., 5 figs., 1 tab

RA Research reactor Annual report 1981 - Part 1, Operation, maintenance and utilization of the RA reactor; Istrazivacki nuklearni reaktor RA, Deo 1 - Pogon, odrzavanje i eksploatacija reaktora u 1981. godini

Energy Technology Data Exchange (ETDEWEB)

Sotic, O; Milosevic, M; Martinc, R; Kozomara-Maic, S; Cupac, S; Radivojevic, J; Stamenkovic, D; Skoric, M [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1981-12-15

biggest difficulty was maintenance of reactor instrumentation. During 1981 the reactor was operated safely, there was no accident nor incident that would affect the safety of reactor personnel or the environment. The testing operation will be continued in 1982,and the experience so far shows that the program would be successfully fulfilled on the whole. [Serbo-Croat] Nuklearni reaktor RA prestao je sa radom nakon martovske kampanje 1979. godine usled pojave talozenja oksihidrata aluminijuma na kosuljicama gorivnih elemenata. Odgovarajucim resenjima Sanitarnog inspektorata Republickog sekretarijata za zdravje i socijalnu politiku SR Srbije i generalnog direktora Instituta za nuklearne nauke 'Boris Kidric', Vinca zabranjen je dalji rad reaktora sve dok se ne utvrde uzroci stvaranja oksihidrata aluminijuma i njihovog talozenja, preduzmu mere za njihovo uklanjanje i ne obezbede potrebni uslovi za normalan nastavak rada reaktora. Do kraja 1979. i tokom 1980. godine, nakon niza izvrsenih analiza i utvrdjivanja uzroka koji su doveli do zaustavljanja rada reaktora, izvrsene su sve neophodne pripreme za ponovno pustanje reaktora u rad. Polazeci od cinjenice da na reaktoru RA ne postoji sistem za hladjenje jezgra u slucaju udesa i da ne postoji adekvatan sistem za filtriranje potencijalno zagadjenog vazduha, a saglasno sa novim propisima o pustanju u rad i probnom radu nuklearnih objekata, Sanitarni inspektorat je doneo privremeno resenje kojim se dozvoljava pustanje reaktora u rad, tj. izvodjenje tzv. 'nultog eksperimenta' uz ogranicenje snage na 1% od vrednosti nominalne snage. Na osnovu dobijene dozvole, reaktor RA je ponovo pusten u rad 21. januara 1981. godine, kada je dostignuta kriticnost sa jezgrom sastavljenim iskljucivo od gorivnih elemenata od 80% obogacenog uranijuma. Eksperiment je zavrsen krajem marta, nakon cega je zatrazena dozvola za probni rad na vecim snagama i potom za rad na punoj snazi. Uzimajuci postojece stanje reaktora RA doneto je resenje kojim se

Anodic oxidation of InP in pure water

International Nuclear Information System (INIS)

Robach, Y.; Joseph, J.; Bergignat, E.; Hollinger, G.

1989-01-01

It is shown that thin InP native oxide films can be grown by anodization of InP in pure water. An interfacial phosphorus-rich In(PO 3 ) 3 -like condensed phosphate is obtained this way. This condensed phosphate has good passivating properties and can be used in electronic device technology. The chemical composition of these native oxides was found similar to that of an anodic oxide grown in an anodization in glycol and water (AGW) electrolyte. From the similarity between the two depth profiles observed in pure water and AGW electrolyte, they can conclude that dissolution phenomena do not seem to play a major role. The oxide growth seems to be controlled by the drift of ionic species under the electric field

Twenty years of chemistry associated with the needs and utilization of nuclear reactors at the 'Boris Kidric' Institute of nuclear sciences, Vinca, Yugoslavia; Dvadeset godina hemije vezane za potrebe i koriscenje nuklearnih reaktora u Institutu za nuklearne nauke 'Boris kidric' i Vinci

Energy Technology Data Exchange (ETDEWEB)

NONE

1969-07-01

This publication covers nine review papers on the following topics related to the needs and utilization of nuclear reactors in the Boris Kidric Institute of nuclear sciences during previous twenty years: radiochemistry, hot atom chemistry, isotope production, spent nuclear fuel reprocessing, chemistry of transuranium elements; liquid radioactive waste processing, purification of reactor coolant water by inorganic ion exchangers, research related to deuterium concentration processes, and chemical dosimetry at the RA reactor. [Serbo-Croat] Ova publikacija obuhvata devet radova, po sledecim naslovima, a odnose se na potrebe i uslove nuklearnih reaktora u Institutu za nuklearne nauke 'Boris Kidric' tokom prethodnih dvadeset godina: radiohemija, hemija vruceg atoma, proizvodnja radioaktivnih izotopa, prerada isluzenog nuklearnog goriva, hemija transuranskih elemenata, obrada radioaktivnih otpadnih voda, preciscavanje vode za hladjenje nuklearnih reaktora pomocu neorganskih jonoizmenjivaca, istrazivanje procesa za koncentrovanje deuterijuma i hemijska dozimetrija reaktora RA.

Vapor-phase etching of InP using anhydrous HCl and PH/sub 3/ gas

International Nuclear Information System (INIS)

Pak, K.; Koide, Y.; Imai, K.; Yoshida, A.; Nakamura, T.; Yasuda, Y.; Nishinaga, T.

1986-01-01

In situ etching of the substrate surface for vapor-phase epitaxy is a useful technique for obtaining a smooth and damage-free surface prior to the growth. Previous work showed that the incorporation of in situ etching of InP substrate with anhydrous HCl gas resulted in a significant improvement in the surface morphologies for MOVPE-grown InGaAs/InP and InP epitaxial layers. However, the experiment on the HCl etching of the InP substrate for a wide temperature range has not been performed as yet. In this note, the authors describe the effect of the substrate temperature on the etching morphology of InP substrate by using the anhydrous HCl and PH/sub 3/ gases. In the experiment, they used a standard MOVPE horizontal system. A quartz reactor tube in a 60 mm ID, 60 cm long, was employed

High resolution resonant Raman scattering in InP and GaAs

International Nuclear Information System (INIS)

Kernohan, E.T.M.

1996-04-01

Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

Energy Technology Data Exchange (ETDEWEB)

Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

1996-06-01

A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

Single-electron tunneling in InP nanowires

NARCIS (Netherlands)

Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

2003-01-01

A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

InP membrane on silicon integration technology

NARCIS (Netherlands)

Smit, M.K.

2013-01-01

Integration of light sources in silicon photonics is usually done with an active InP-based layer stack on a silicon-based photonic circuit-layer. InP Membrane On Silicon (IMOS) technology integrates all functionality in a single InP-based layer.

Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

International Nuclear Information System (INIS)

Metaferia, Wondwosen; Kataria, Himanshu; Sun, Yan-Ting; Lourdudoss, Sebastian

2015-01-01

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO 2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic orientation dependent dopant incorporation and gas phase supersaturation are shown to affect the extent of lateral growth. A lateral to vertical growth rate ratio as large as 3.6 is achieved. X-ray diffraction studies confirm substantial crystalline quality improvement of the CELOG InP compared to the InP seed layer. Transmission electron microscopy studies reveal the formation of a direct InP–Si heterointerface by CELOG without threading dislocations. While CELOG is shown to avoid dislocations that could arise due to the large lattice mismatch (8%) between InP and Si, staking faults could be seen in the layer. These are probably created by the surface roughness of the Si surface or SiO 2 mask which in turn would have been a consequence of the initial process treatments. The direct InP–Si heterointerface can find applications in high efficiency and cost-effective Si based III–V semiconductor multijunction solar cells and optoelectronics integration. (paper)

Assembly of phosphide nanocrystals into porous networks: formation of InP gels and aerogels.

Science.gov (United States)

Hitihami-Mudiyanselage, Asha; Senevirathne, Keerthi; Brock, Stephanie L

2013-02-26

The applicability of sol-gel nanoparticle assembly routes, previously employed for metal chalcogenides, to phosphides is reported for the case of InP. Two different sizes (3.5 and 6.0 nm) of InP nanoparticles were synthesized by solution-phase arrested precipitation, capped with thiolate ligands, and oxidized with H₂O₂ or O₂/light to induce gel formation. The gels were aged, solvent-exchanged, and then supercritically dried to obtain aerogels with both meso- (2-50 nm) and macropores (>50 nm) and accessible surface areas of ∼200 m²/g. Aerogels showed higher band gap values relative to precursor nanoparticles, suggesting that during the process of assembling nanoparticles into 3D architectures, particle size reduction may have taken place. In contrast to metal chalcogenide gelation, InP gels did not form using tetranitromethane, a non-oxygen-transferring oxidant. The requirement of an oxygen-transferring oxidant, combined with X-ray photoelectron spectroscopy data showing oxidized phosphorus, suggests gelation is occurring due to condensation of phosphorus oxoanionic moieties generated at the interfaces. The ability to link discrete InP nanoparticles into a 3D porous network while maintaining quantum confinement is expected to facilitate exploitation of nanostructured InP in solid-state devices.

High microwave performance ion-implanted GaAs MESFETs on InP substrates

International Nuclear Information System (INIS)

Wada, M.; Kato, K.

1990-01-01

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm 2 /Vs with a carrier density of 2 x 10 17 cm -3 at room temperature. The MESFET (0.8 μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported to GaAs MESFETs on InP substrates. These results demonstrate the high potential of ion-implanted MESFETs as electronic devices for high-speed InP-based OEICs. (author)

Electrical properties of InP irradiated by fast neutrons of a nuclear reactor

International Nuclear Information System (INIS)

Kolin, N.G.; Merkurisov, D.I.; Solov'ev, S.P.

2000-01-01

Electrophysical properties of InP single crystalline samples with different initial concentration of charge carriers have been studied in relation to irradiation conditions with fast neutrons of a nuclear reactor and subsequent heat treatments within the temperature range of 20-900 deg C. It has been shown that changes of the properties depend on the initial doping level. The annealing in the temperature range mentioned above results in the elimination of radiation defects. This makes possible to use the nuclear doping method for InP samples. In this respect the contribution of intermediate neutron reactions to the whole effect of the InP nuclear doping is estimated to be ∼ 10% [ru

Surface protection during plasma hydrogenation for acceptor passivation in InP

International Nuclear Information System (INIS)

Lopata, J.; Dautremont-Smith, W.C.; Pearton, S.J.; Lee, J.W.; Ha, N.T.; Luftman, H.S.

1990-01-01

Various dielectric and metallic films were examined as H-permeable surface protection layers on InP during H 2 or D 2 plasma exposure for passivation of acceptors in the InP. Plasma deposited SiN x , SiO 2 , and a-Si(H) films ranging in thickness from 85 to 225 angstrom were used to protect p-InP during d 2 plasma exposure at 250 degrees C. Optimum protective layer thicknesses were determined by a trade-off between the effectiveness of the layer to prevent P loss from the wafer surface and the ability to diffuse atomic H or D at a rate greater than or equal to that in the underlying InP. SIMS and capacitance-voltage depth profiling were used to determine the extent of D in-diffusion and acceptor passivation respectively. Sputter deposited W and e-beam evaporated Ti films ∼100 Angstrom thick were also evaluated. The W coated sample yielded similar results to those with dielectric films in that acceptors in p-InP were passivated to a similar depth for the same plasma exposure. The 100 Angstrom Ti film, however, did not allow the D to diffuse into the InP substrate. It is surmised that the Ti film trapped the D, thus preventing diffusion into the substrate

Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

International Nuclear Information System (INIS)

Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

1999-01-01

It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, B.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen

Distinguishing a SM-like MSSM Higgs boson from SM Higgs boson ...

Indian Academy of Sciences (India)

We explore the possibility of distinguishing the SM-like MSSM Higgs boson from the SM Higgs boson via Higgs boson pair production at future muon collider. We study the behavior of the production cross-section in SM and MSSM with Higgs boson mass for various MSSM parameters tan and A. We observe that at fixed ...

New AMS method to measure the atom ratio {sup 146}Sm/{sup 147}Sm for a half-life determination of {sup 146}Sm

Energy Technology Data Exchange (ETDEWEB)

Kinoshita, N. [Tandem Accelerator Complex, Research Facility Center for Science and Technology, University of Tsukuba (Japan); Paul, M., E-mail: paul@vms.huji.ac.il [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Alcorta, M. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Bowers, M.; Collon, P. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556-5670 (United States); Deibel, C.M. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, MI 46624 (United States); DiGiovine, B. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Goriely, S. [Universite Libre de Bruxelles, CP-226, Brussels 1050 (Belgium); Greene, J.P.; Henderson, D.J.; Jiang, C.L. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kashiv, Y. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556-5670 (United States); Kay, B.P.; Lee, H.Y.; Marley, S.T. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Nakanishi, T. [Faculty of Chemistry, Institute of Science and Engineering, Kanazawa University (Japan); Pardo, R.C.; Patel, N.; Rehm, K.E. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Robertson, D. [Department of Physics, University of Notre Dame, Notre Dame, IN 46556-5670 (United States); and others

2013-01-15

The extinct p-process nuclide {sup 146}Sm (t{sub 1/2} = 103 {+-} 5 Myr) is known to have been present in the Early-Solar System and has been proposed as an astrophysical chronometer. {sup 146}Sm is also intensely used to date meteorite and planetary differentiation processes, enhancing the importance of an accurate knowledge of the {sup 146}Sm half-life. We are engaged in a new determination of the {sup 146}Sm half-life in which the {sup 146}Sm/{sup 147}Sm atom ratio is determined by accelerator mass spectrometry at the ATLAS facility of Argonne National Laboratory. In order to reduce systematic errors in the AMS determination of the {sup 146}Sm/{sup 147}Sm ratios (in the range of 10{sup -7}-10{sup -9}), {sup 146}Sm and {sup 147}Sm ions were alternately counted in the same detector in the focal plane of a gas-filled magnet, respectively in continuous-wave and attenuated mode. Quantitative attenuation is obtained with the 12 MHz pulsed and ns-bunched ATLAS beam by chopping beam pulses with an RF sweeper in a ratio (digitally determined) down to 1:10{sup 6}. The experiments and preliminary results are discussed.

Composition and structure of ion-bombardment-induced growth cones on InP

International Nuclear Information System (INIS)

Malherbe, J.B.; Lakner, H.; Gries, W.H.

1991-01-01

The previously reported effect of low-energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth 'cones' induced by argon ion bombardment of (100) InP between 7 and 10 keV proved the cones to consist of crystalline InP (and not metallic indium, as has sometimes been claimed). The investigation showed that the irradiated surface region is not rendered completely amorphous but that it recrystallizes from the crystalline/amorphous interface in a columnar growth pattern, often terminating in growth cones protruding above the surface. Weak beam investigations revealed that the overwhelming majority of the cones have the orientation of the substrate. These phenomena were observed at all dose densities from 7 x 10 15 to 2 x 10 17 cm -2 . (author)

Structural analysis of erbium {delta}-doped InP by OMVPE with RBS-channeling

Energy Technology Data Exchange (ETDEWEB)

Yuhara, Junji; Takeda, Hitoshi; Matsubara, Naoki; Tabuchi, Masao; Fujiwara, Yasufumi; Morita, Kenji; Takeda, Yoshikazu [Nagoya Univ. (Japan). School of Engineering

1997-03-01

We have determined the lattice location of Er in InP {delta}-doped by OMVPE with RBS-channeling. Er concentrations along the <001> and <011> directions are same as random yields, while a significant flux peaking effect is seen for the <111> direction. These data suggest that Er atoms occupy the site equivalent to the hexahedral site in InP lattice. (author)

Saturation broadening effect in an InP photonic-crystal nanocavity switch

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2014-01-01

Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA.......Pump-probe measurements on InP photonic-crystal nanocavities show large-contrast fast switching at low pulse energy. For large pulse energies, large resonance shifts passing across the probe lead to switching contrast saturation and switching time-window broadening. © 2014 OSA....

Metastability of the phosphorus antisite defect in low-temperature InP

International Nuclear Information System (INIS)

Mikucki, J.; Baj, M.; Wasik, D.; Walukiewicz, W.; Bi, W. G.; Tu, C. W.

2000-01-01

We report on the transport properties of low-temperature (LT) InP/In x Ga 1-x As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers. (c) 2000 The American Physical Society

Performance, defect behavior and carrier enhancement in low energy, proton irradiated p+nn+ InP solar cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

The highest AMO efficiency (19.1 percent) InP solar cell consisted of an n+pp+ structure epitaxially grown on a p+ InP substrate. However, the high cost and relative fragility of InP served as motivation for research efforts directed at heteroepitaxial growth of InP on more viable substrates. The highest AMO efficiency (13.7 percent) for this type of cell was achieved using a GaAs substrate. Considering only cost and fracture toughness, Si would be the preferred substrate. The fact that Si is a donor in InP introduces complexities which are necessary in order to avoid the formation of an efficiency limiting counterdiode. One method used to overcome this problem lies in employing an n+p+ tunnel junction in contact with the cell's p region. A simpler method consists of using an n+ substrate and processing the cell in the p+ nn+ configuration. This eliminates the need for a tunnel junction. Unfortunately, the p/n configuration has received relatively little attention the best cell with this geometry having achieved an efficiency of 17 percent. Irradiation of these homoepitaxial cells, with 1 Mev electrons, showed that they were slightly more radiation resistant than diffused junction n/p cells. Additional p/n InP cells have been processed by some activity aimed at diffusion. Currently, there has been some activity aimed at producing heteroepitaxial p+nn+ InP cells using n+ Ge substrates. Since, like Si, Ge is an n-dopant in InP, use of this configuration obviates the need for a tunnel junction. Obviously, before attempting to process heteroepitaxial cells, one must produce a reasonably good homoepitaxial cell. In the present case we focus our attention on homoepitaxially on an n+ Ge substrate.

Budker INP in the LHC Machine (2)

CERN Multimedia

2001-01-01

The main BINP contributions to the LHC machine are magnets for transfer lines (26 MCHF) and bus- bar sets (23 MCHF). Budker INP is also responsible for construction of some other LHC magnets and vacuum parts. In total, the contribution to the LHC machine will reach about 90 MCHF.

Surface Plasmons on Highly Doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Ottaviano, Luisa; Semenova, Elizaveta

2016-01-01

Silicon doped InP is grown by metal-organic vapor phase epitaxy (MOVPE) using optimized growth parameters to achieve high free carrier concentration. Reflectance of the grown sample in mid-IR range is measured using FTIR and the result is used to retrieve the parameters of the dielectric function...

Influence of the cone angle and crystal shape on the formation of twins in InP crystals

International Nuclear Information System (INIS)

Li, Xiaolan; Yang, Ruixia; Yang, Fan; Sun, Tongnian; Sun, Niefeng

2012-01-01

We present the investigation of twinning phenomena of LEC InP crystal growth which has been carried out in our laboratory in recent years. It is observed that the yield of twin-free single crystal InP can be grown by control the cone angle and crystal shape of a gradually increased diameter. Twin formation has been correlated to many growth factors. The influence of ingot shape on the formation of twins can be looked as the conical angle dependent twin probability of InP crystals. Twin-free InP crystals can be grown by large cone angle over 75 to 90 . (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

24/7 SM slavery.

Science.gov (United States)

Dancer, Peter L; Kleinplatz, Peggy J; Moser, Charles

2006-01-01

This study describes the nature of 24/7 SM slavery as practiced within the SM (sadomasochistic) community. These SM participants, who attempt to live full-time in owner-slave roles, represent a small proportion of those with SM interests. SM slaves have not been studied systematically to determine if and how they differ from other SM practitioners. An online questionnaire was used to obtain responses from individuals who self-identified as slaves. A total of 146 respondents participated, 53% female and 47% male, ranging in age from 18 to 72. We explored the depth of their relationships, how well they approximated "slavery," and how their relationships were structured to maintain distinct roles. Data showed that in long-term SM slave relationships, a power differential exists which extends beyond time-limited SM or sexual interactions. Owners and slaves often use common, daily life experiences or situations, such as the completion of household chores, money management, and morning or evening routines, to distinguish and maintain their respective roles. In addition, contrary to the perception of total submission, results revealed that slaves exercise free will when it is in their best interests to do so. These relationships were long-lasting and satisfying to the respondents.

Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires.

Science.gov (United States)

Zilli, Attilio; De Luca, Marta; Tedeschi, Davide; Fonseka, H Aruni; Miriametro, Antonio; Tan, Hark Hoe; Jagadish, Chennupati; Capizzi, Mario; Polimeni, Antonio

2015-04-28

Semiconductor nanowires (NWs) formed by non-nitride III-V compounds grow preferentially with wurtzite (WZ) lattice. This is contrary to bulk and two-dimensional layers of the same compounds, where only zincblende (ZB) is observed. The absorption spectrum of WZ materials differs largely from their ZB counterparts and shows three transitions, referred to as A, B, and C in order of increasing energy, involving the minimum of the conduction band and different critical points of the valence band. In this work, we determine the temperature dependence (T = 10-310 K) of the energy of transitions A, B, and C in ensembles of WZ InP NWs by photoluminescence (PL) and PL excitation (PLE) spectroscopy. For the whole temperature and energy ranges investigated, the PL and PLE spectra are quantitatively reproduced by a theoretical model taking into account contribution from both exciton and continuum states. WZ InP is found to behave very similarly to wide band gap III-nitrides and II-VI compounds, where the energy of A, B, and C displays the same temperature dependence. This finding unveils a general feature of the thermal properties of WZ materials that holds regardless of the bond polarity and energy gap of the crystal. Furthermore, no differences are observed in the temperature dependence of the fundamental band gap energy in WZ InP NWs and ZB InP (both NWs and bulk). This result points to a negligible role played by the WZ/ZB differences in determining the deformation potentials and the extent of the electron-phonon interaction that is a direct consequence of the similar nearest neighbor arrangement in the two lattices.

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Science.gov (United States)

Chatterjee, B.; Davis, W. C.; Ringel, S. A.; Hoffman, R., Jr.

1995-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Science.gov (United States)

Chatterjee, Basab; Davis, William C.; Ringel, Steve A.; Hoffman, Richard, Jr.

1996-01-01

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

International Nuclear Information System (INIS)

Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

1992-01-01

The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.

Science.gov (United States)

Dionízio Moreira, M; Venezuela, P; Miwa, R H

2010-07-16

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties

International Nuclear Information System (INIS)

Dionizio Moreira, M; Venezuela, P; Miwa, R H

2010-01-01

We performed an ab initio total energy investigation, within the density functional theory, of the energetic stability and the electronic properties of hydrogenated InAs/InP nanowire (NW) heterojunctions, as well as InAs and InP homojunctions composed of different structural arrangements, zinc-blend (zb) and wurtzite (w). For InAs/InP NW heterojunctions our results indicate that w and zb NW heterojunctions are quite similar, energetically, for thin NWs. We also examined the robustness of the abrupt interface through an atomic As↔P swap at the InAs/InP interface. Our results support the formation of abrupt (non-abrupt) interfaces in w (zb) InAs/InP heterojunctions. Concerning InAs/InP NW-SLs, our results indicate a type-I band alignment, with the energy barrier at the InP layers, in accordance with experimental works. For InAs or InP zb/w homojunctions, we also found a type-I band alignment for thin NWs, however, on increasing the NW diameter both InAs and InP homojunctions exhibit a type-II band alignment.

Distinguishing a SM-like MSSM Higgs boson from SM Higgs boson at muon collider

International Nuclear Information System (INIS)

Singhal, Jai Kumar; Singh, Sardar; Nagawat, Ashok K.

2007-01-01

We explore the possibility of distinguishing the SM-like MSSM Higgs boson from the SM Higgs boson via Higgs boson pair production at future muon collider. We study the behavior of the production cross-section in SM and MSSM with Higgs boson mass for various MSSM parameters tanβ and m A . We observe that at fixed CM energy, in the SM, the total cross-section increases with the increase in Higgs boson mass whereas this trend is reversed for the MSSM. The changes that occur for the MSSM in comparison to the SM predictions are quantified in terms of the relative percentage deviation in cross-section. The observed deviations in cross-section for different choices of Higgs boson masses suggest that the measurements of the cross-section could possibly distinguish the SM-like MSSM Higgs boson from the SM Higgs boson. (author)

Optical properties of Sulfur doped InP single crystals

Science.gov (United States)

El-Nahass, M. M.; Youssef, S. B.; Ali, H. A. M.

2014-05-01

Optical properties of InP:S single crystals were investigated using spectrophotometric measurements in the spectral range of 200-2500 nm. The absorption coefficient and refractive index were calculated. It was found that InP:S crystals exhibit allowed and forbidden direct transitions with energy gaps of 1.578 and 1.528 eV, respectively. Analysis of the refractive index in the normal dispersion region was discussed in terms of the single oscillator model. Some optical dispersion parameters namely: the dispersion energy (Ed), single oscillator energy (Eo), high frequency dielectric constant (ɛ∞), and lattice dielectric constant (ɛL) were determined. The volume and the surface energy loss functions (VELF & SELF) were estimated. Also, the real and imaginary parts of the complex conductivity were calculated.

Effects of mask imperfections on InP etching profiles

International Nuclear Information System (INIS)

Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

1990-01-01

The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

Operation and maintenance of the RA Reactor in 1985, Part 1, Annex B - Report of the Technology Service; Deo 1 - Pogon i odrzavanje nuklearnog reaktora RA u 1985. godini - Prilog B - Izvestaj o radu tehnoloske sluzbe

Energy Technology Data Exchange (ETDEWEB)

Martinc, R; Vukadin, Z; Stosic, O; Cupac, S [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1985-12-01

Technology service is established according to the need of unified technology control of the reactor, based on the organizational structure developed in USA, a part of which was applied at the Krsko NPP. Tasks of this service are: regular control and recording of operating reactor parameters under steady state and accidental conditions; control of chemical state of the reactor core (control of Ph values and electro conductivity of the heavy water and technical water); dosimetry parameters control and recording; safety and optimisation analyses when planning reactor core modifications; (changing the type of fuel, design of new components); cooperation with the reactor users during isotope production, activation analyses, application of neutron beams; participating in research programs; planning refueling. The most important task performed by this service was conversion of the core from 2% to 80% enriched fuel elements. A methodology for optimizing the reactor application was developed. Operation of the heavy water purification system, heavy water parameters, and operation of the gas system were controlled. Radiation and contamination levels in the working environment were measured, individual and collective doses. [Serbo-Croat] Tehnoloska sluzba uspostavljena je u skladu sa ispoljenim potrebama jedinstvene tehnoloske kontrole reaktora, oslanjajajucui se na organizacionu semu koja je razvijena u SAD, a cija je jedna varijanta primenjena na NE Krsko. Zadaci sluzbe su obavljanje sledecih zadataka: redovna kontrola i evidencija radnih parametara reaktora u redovnim i akcidentalnim uslovima; kontrola hemijskog rezima u reaktoru (kontrola PH vrednosti i elektroprovodnosti teske i tehnicke vode); kontrola i evidencija tehnicke dozimetrije; sigurnosne i optimizacione analize prilikom planiranja izmena na reaktoru (promene vrste goriva, izgradnja novih elemenata opreme); saradnja sa korisnicima reaktora prilikom prozivodnje izotopa, aktivacione analize, koriscenja

Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots

Science.gov (United States)

Wang, Peng; Lin, Shisheng; Ding, Guqiao; Li, Xiaoqiang; Wu, Zhiqian; Zhang, Shengjiao; Xu, Zhijuan; Xu, Sen; Lu, Yanghua; Xu, Wenli; Zheng, Zheyang

2016-04-01

We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

Science.gov (United States)

Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

2005-07-01

Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Molecular beam epitaxy of InxGa1-xAs on InP (100) substrates

International Nuclear Information System (INIS)

Dvoryankina, G.G.; Dvoryankin, V.F.; Petrov, A.G.; Kudryashov, A.A.; Khusid, L.B.

1991-01-01

Heteroepitaxy layers of In x Ga 1-x As in the wide field of compositions (x=0.2-0.8) of 0.2-2.0 μm thick on (100) InP substrates were grown using the methods of epitaxy from molecular beams. Structure, surface morphology and electric properties of layers in relation to their thick and composition were investigated. It was shown that the quality of In x Ga 1-x As layers on (100) InP was more sensitive to tensile strain than compressive strain. Different mechanisms of scattering of free electrons in layers of In x Ga 1-x As(x∼=0.53) on (101) InP were considered

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Effect of Zinc Incorporation on the Performance of Red Light Emitting InP Core Nanocrystals.

Science.gov (United States)

Xi, Lifei; Cho, Deok-Yong; Besmehn, Astrid; Duchamp, Martial; Grützmacher, Detlev; Lam, Yeng Ming; Kardynał, Beata E

2016-09-06

This report presents a systematic study on the effect of zinc (Zn) carboxylate precursor on the structural and optical properties of red light emitting InP nanocrystals (NCs). NC cores were assessed using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), energy-dispersive X-ray spectroscopy (EDX), and high-resolution transmission electron microscopy (HRTEM). When moderate Zn:In ratios in the reaction pot were used, the incorporation of Zn in InP was insufficient to change the crystal structure or band gap of the NCs, but photoluminescence quantum yield (PLQY) increased dramatically compared with pure InP NCs. Zn was found to incorporate mostly in the phosphate layer on the NCs. PL, PLQY, and time-resolved PL (TRPL) show that Zn carboxylates added to the precursors during NC cores facilitate the synthesis of high-quality InP NCs by suppressing nonradiative and sub-band-gap recombination, and the effect is visible also after a ZnS shell is grown on the cores.

Defects in mitophagy promote redox-driven metabolic syndrome in the absence of TP53INP1.

Science.gov (United States)

Seillier, Marion; Pouyet, Laurent; N'Guessan, Prudence; Nollet, Marie; Capo, Florence; Guillaumond, Fabienne; Peyta, Laure; Dumas, Jean-François; Varrault, Annie; Bertrand, Gyslaine; Bonnafous, Stéphanie; Tran, Albert; Meur, Gargi; Marchetti, Piero; Ravier, Magalie A; Dalle, Stéphane; Gual, Philippe; Muller, Dany; Rutter, Guy A; Servais, Stéphane; Iovanna, Juan L; Carrier, Alice

2015-06-01

The metabolic syndrome covers metabolic abnormalities including obesity and type 2 diabetes (T2D). T2D is characterized by insulin resistance resulting from both environmental and genetic factors. A genome-wide association study (GWAS) published in 2010 identified TP53INP1 as a new T2D susceptibility locus, but a pathological mechanism was not identified. In this work, we show that mice lacking TP53INP1 are prone to redox-driven obesity and insulin resistance. Furthermore, we demonstrate that the reactive oxygen species increase in TP53INP1-deficient cells results from accumulation of defective mitochondria associated with impaired PINK/PARKIN mitophagy. This chronic oxidative stress also favors accumulation of lipid droplets. Taken together, our data provide evidence that the GWAS-identified TP53INP1 gene prevents metabolic syndrome, through a mechanism involving prevention of oxidative stress by mitochondrial homeostasis regulation. In conclusion, this study highlights TP53INP1 as a molecular regulator of redox-driven metabolic syndrome and provides a new preclinical mouse model for metabolic syndrome clinical research. © 2015 The Authors. Published under the terms of the CC BY 4.0 license.

[Managment system in safety and health at work organization. An Italian example in public sector: Inps].

Science.gov (United States)

Di Loreto, G; Felicioli, G

2010-01-01

The Istituto Nazionale della Previdenza Sociale (Inps) is one of the biggest Public Sector organizations in Italy; about 30.000 people work in his structures. Fifteen years ago, Inps launched a long term project with the objective to create a complex and efficient safety and health at work organization. Italian law contemplates a specific kind of physician working on safety and health at work, called "Medico competente", and 85 Inps's physicians work also as "Medico competente". This work describes how IT improved coordination and efficiency in this occupational health's management system.

Time-of-flight neutron diffraction investigation of temperature factors in the Zn blende semiconductor InP

International Nuclear Information System (INIS)

Ferrari, C.; Bocchi, C.; Fornari, R.; Moze, O.; Wilson, C.C.

1992-01-01

A structural investigation of the Zn blende structure semiconductor InP has been carried out using the single crystal diffractometer SXD at the pulsed neutron facility ISIS. The ability to measure structure factors accurately at large Q values even with highly absorbing materials such as InP is demonstrated. Measurements were performed on a single crystal of InP at 293, 100 and 50 K with the crystallographic axis mounted perpendicular to the scattering plane. This enabled collection of (hhl) reflections up to a maximum with Miller indices (10, 10, 8). (orig.)

AFM observation of OMVPE-grown ErP on InP substrates using a new organometal tris(ethylcyclopentadienyl)erbium (Er(EtCp)3)

International Nuclear Information System (INIS)

Akane, T.; Jinno, S.; Yang, Y.; Kuno, T.; Hirata, T.; Isogai, Y.; Watanabe, N.; Fujiwara, Y.; Nakamura, A.; Takeda, Y.

2003-01-01

ErP has been grown on InP(0 0 1) substrates by organometallic vapor phase epitaxy (OMVPE) using a new liquid organic Er source: tris(ethylcyclopentadienyl)erbium (Er(EtCp) 3 ). Morphological change of an ErP layer on InP(0 0 1) is investigated together with that of an overgrown capping InP layer. Optimum growth condition of InP causes islanding on over-monolayer-ErP. A relatively low overgrowth temperature of InP is a key factor for attaining complete capping coverage on ErP

Bandgap Engineering of InP QDs Through Shell Thickness and Composition

Energy Technology Data Exchange (ETDEWEB)

Dennis, Allison M. [Los Alamos National Laboratory; Mangum, Benjamin D. [Los Alamos National Laboratory; Piryatinski, Andrei [Los Alamos National Laboratory; Park, Young-Shin [Los Alamos National Laboratory; Htoon, Han [Los Alamos National Laboratory; Hollingsworth, Jennifer A. [Los Alamos National Laboratory

2012-06-21

Fields as diverse as biological imaging and telecommunications utilize the unique photophysical and electronic properties of nanocrystal quantum dots (NQDs). The development of new NQD compositions promises material properties optimized for specific applications, while addressing material toxicity. Indium phosphide (InP) offers a 'green' alternative to the traditional cadmium-based NQDs, but suffers from extreme susceptibility to oxidation. Coating InP cores with more stable shell materials significantly improves nanocrystal resistance to oxidation and photostability. We have investigated several new InP-based core-shell compositions, correlating our results with theoretical predictions of their optical and electronic properties. Specifically, we can tailor the InP core-shell QDs to a type-I, quasi-type-II, or type-II bandgap structure with emission wavelengths ranging from 500-1300 nm depending on the shell material used (ZnS, ZnSe, CdS, or CdSe) and the thickness of the shell. Single molecule microscopy assessments of photobleaching and blinking are used to correlate NQD properties with shell thickness.

Nuclear Reactor RA Safety Report, Vol. 5, Reactor cooling systems; Izvestaj o sigurnosti nuklearnog reaktora RA, Knjiga 5, Hladjenje reaktora i pripadajuci sistemi

Energy Technology Data Exchange (ETDEWEB)

NONE

1986-11-01

RA reactor cooling system enable cooling during normal operation and under possible accidental conditions and include: technical water system, heavy water system, helium gas system, system for heavy water purification and emergency cooling system. Primary cooling system is a closed heavy water circulation system. Heavy water system is designed to enable permanent circulation and twofold function of heavy water. In the upward direction of cooling it has a coolant role and in the downward direction it is the moderator. Separate part of the primary coolant loop is the system for heavy water purification. This system uses distillation and ion exchange processes. [Serbo-Croat] Sistemi za hladjenje reaktora RA obezbedjuju hladjenje u svim rezimima eksploatacije i potenijalno udesnim satnjim i obuhvataju: sistem tehnicke vode, sistem teske vode, gasni sistem helijuma, sistem za preciscavanje teske vode i sistem za akcidentalno hladjenje. Primarni sistem za hladjenje je zatvoreni cirkulacioni sistem teske vode. Specificnost sistema teske vode vezana je za neprekidnost cirkulacije i razlicite funkcije teske vode. U uzlaznom strujanju, teske vode ima ulogu hladioca a u silaznom ulogu moderatora. Poseban deo primarnog sistema predstavlja sistem za preciscavanje teske vode. Ovaj sistem koristi destilacioni i jonoizmenjivacki postupak.

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.

Science.gov (United States)

Yang, Lifeng; Wang, Tao; Zou, Ying; Lu, Hong-Liang

2017-12-01

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO 2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP x O y layer is easily formed at the HfO 2 /InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al 2 O 3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 ± 0.1 and 2.83 ± 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.

Design, fabrication and transportation of Si rotating device

International Nuclear Information System (INIS)

Kimura, Nobuaki; Imaizumi, Tomomi; Takemoto, Noriyuki; Tanimoto, Masataka; Saito, Takashi; Hori, Naohiko; Tsuchiya, Kunihiko; Romanova, Nataliya; Gizatulin, Shamil; Martyushov, Alexandr; Nakipov, Darkhan; Chakrov, Petr; Tanaka, Futoshi; Nakajima, Takeshi

2012-06-01

Si semiconductor production by Neutron Transmutation Doping (NTD) method using the Japan Materials Testing Reactor (JMTR) has been investigated in Neutron Irradiation and Testing Reactor Center, Japan Atomic Energy Agency (JAEA) in order to expand industry use. As a part of investigations, irradiation test of silicon ingot for development of NTD-Si with high quality was planned using WWR-K in Institute of Nuclear Physics (INP), National Nuclear Center of Republic of Kazakhstan (NNC-RK) based on one of specific topics of cooperation (STC), Irradiation Technology for NTD-Si (STC No.II-4), on the implementing arrangement between NNC-RK and the JAEA for 'Nuclear Technology on Testing/Research Reactors' in cooperation in research and development in nuclear energy and technology. As for the irradiation test, Si rotating device was fabricated in JAEA, and the fabricated device was transported with irradiation specimens from JAEA to INP-NNC-RK. This report described the design, the fabrication, the performance test of the Si rotating device and transportation procedures. (author)

Calorimetric investigation on the Pb-Sm and Sn-Sm alloys

International Nuclear Information System (INIS)

Berrada, A.-E.-A.; Claire, Y.; Chafik el Idrissi, M.; Castanet, R.

1997-01-01

The integral enthalpy of formation of the Sm-Pb and Sm-Sn melts at 1203 K, h f , was determined by direct reaction calorimetry (drop method) in the Pb and Sn rich sides with the help of a high-temperature Tian-Calvet calorimeter. The results can be fitted respectively with reference to the mole fraction of samarium, x, as follows: f /kJmol -1 =x(1-x)(-109.8 -372.0.7x) with 0 Sm f /kJmol -1 =x(1- x)(-277.0+105.4x) with 0 Sm -1 respectively. Such negative values suggest the existence of a strong short-range order in the liquid state. The stoichiometry and the thermal stability of these associations needs additional thermodynamic determinations concerning mainly the free enthalpy of formation. It will be determined by Knudsen-effusion combined with mass spetrometry in a further work. (orig.)

The physics design of EBR-II; Physique du reacteur EBR-II; Fizicheskij raschet ehksperimental'nogo reaktora - razmnozhitelya EVR-II; Aspectos fisicos del reactor EBR-II

Energy Technology Data Exchange (ETDEWEB)

Loewenstein, W. B. [Argonne National Laboratory, Argonne, IL (United States)

1962-03-15

hexagonal del reactor los datos obtenidos en geometrias simples idealizadas, analiticas o experimentales. Se compara el rendimiento nuclear, incluso el de reproduccion, del reactor real con el del modelo teorico y se describen las variaciones a largo plazo de la reactividad y de la generacion de energia en la envoltura fertil, refiriendolas a los ciclos propuestos para el combustible y la envoltura fertil. La memoria formula consideraciones sobre la seguridad estudiando en particular la introduccion de indices de reactividad normales y anormales y la consecuencia de supuestos efectos de reactividad, que se basan en el comportamiento fisico de la aleacion combustible y de la estructura del reactor, asi como en la extrapolacion al sistema del EBR-II de los experimentos realizados con el conjunto TREAT. Por ultimo, examina el problema de la fusion del cuerpo del reactor EBR-II. (author) [Russian] Vychisleniya statisticheskogo, dinamicheskogo i dlitel'nogo rezhima reaktivnosti ehksperimental'nog o reaktora-razmnozhitel ya EBR-II dayutsya sovmestno s rezul'tatami i analizom ehksperimentov na reaktore EBR-II po dostizheniyu kritichnosti v sukhom sostoyanii i otdel'nykh ehksperimentov na reaktore ZPR-III. Osoboe vnimanie udelyaetsya problemam fizicheskogo rascheta reaktora, kotorye voznikayut posle opredeleniya printsipial'noj skhemy i do sooruzheniya ili vvoda reaktora v ehkspluatatsiyu. Opisyvayutsya analiz bezopasnosti reaktora i soobrazheniya po otsenke opasnostej, a takzheikh vliyanie na raschet reaktora. V doklade opisyvaetsya sposob ispol'zovaniya modeli EBR-II na osnovanii poluchennykh na reaktore ZPR-III dannykh, a takzhe dannykh sukhoj kritichnosti reaktora EBR-II. EHti ehksperimenty, ikh analiz i teoreticheskie vykladki yavlyayutsya osnovoj dlya opredeleniya fizicheskogo povedeniya reaktornoj sistemy. Bolee podrobno issleduyutsya ogranicheniya, prisushchie primeneniyu ehksperimental'nykh dannykh k rassmatrivaemo j ehnergeticheskoj reaktornoj sisteme. Syuda otnosyatsya

Evaluation of the exothermicity of the chemi-ionization reaction Sm + O → SmO+ + e−

International Nuclear Information System (INIS)

Cox, Richard M; Kim, JungSoo; Armentrout, P. B.; Bartlett, Joshua; VanGundy, Robert A.; Heaven, Michael C.; Ard, Shaun G.; Shuman, Nicholas S.; Viggiano, Albert A.; Melko, Joshua J.

2015-01-01

The exothermicity of the chemi-ionization reaction Sm + O → SmO + + e − has been re-evaluated through the combination of several experimental methods. The thermal reactivity (300–650 K) of Sm + and SmO + with a range of species measured using a selected ion flow tube-mass spectrometer apparatus is reported and provides limits for the bond strength of SmO + , 5.661 eV ≤ D 0 (Sm + -O) ≤ 6.500 eV. A more precise value is measured to be 5.72 5 ± 0.07 eV, bracketed by the observed reactivity of Sm + and SmO + with several species using a guided ion beam tandem mass spectrometer (GIBMS). Combined with the established Sm ionization energy (IE), this value indicates an exothermicity of the title reaction of 0.08 ± 0.07 eV, ∼0.2 eV smaller than previous determinations. In addition, the ionization energy of SmO has been measured by resonantly enhanced two-photon ionization and pulsed-field ionization zero kinetic energy photoelectron spectroscopy to be 5.7427 ± 0.0006 eV, significantly higher than the literature value. Combined with literature bond energies of SmO, this value indicates an exothermicity of the title reaction of 0.14 ± 0.17 eV, independent from and in agreement with the GIBMS result presented here. The evaluated thermochemistry also suggests that D 0 (SmO) = 5.83 ± 0.07 eV, consistent with but more precise than the literature values. Implications of these results for interpretation of chemical release experiments in the thermosphere are discussed

Switching dynamics in InP photonic-crystal nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2016-01-01

In this paper, we presented switching dynamic investigations on an InP photonic-crystal (PhC) nanocavity structure using homodyne pump-probe measurements. The measurements were compared with simulations based on temporal nonlinear coupled mode theory and carrier rate equations for the dynamics of...

InP solar cell with window layer

Science.gov (United States)

Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

1994-01-01

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Strategisch management (SM)

NARCIS (Netherlands)

Nagel, A.P.; Vercouteren, W.J.J.C.; Hoek, van der N.; Lohman, T.A.M.; Vermeulen, N.

1996-01-01

Kernbegrippen die bij de discussie van strategisch management (SM) aan de orde komen, zijn productinnovatie op ondernemingsniveau (oftewel strategische productinnovatie, SPI) en technologiestrategie. In dit artikel wordt een raamwerk van SM geintroduceerd. Daartoe worden de verschillende fasen van

Operation and maintenance of the RA reactor, RA Research reactor. Annual report 1976; Pogon i odrzavanje reaktora RA, Izvestaj o radu u 1976. godini

Energy Technology Data Exchange (ETDEWEB)

Martinc, R [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1976-12-15

remonta do kojih je dolazilo zbog kvarova (nastalih zbog neizvrsavanja investicionog odrzavanja u toku poslednjih 6 godina) zatim nemogucnost ranijeg pocetka koriscenja novog goriva u reaktoru RA i istrosenosti rezervi starog 2% obogacenog goriva i na kraju zbog obimnog programa eksperimenata u oblasti sigurnosnih analiza vezanih za uvodjenje novog visokoobogacenog goriva u reaktor RA. Na reaktoru RA uspesno su izvrseni eksperimentalni i teorijski radovi u oblasti sigurnosnih analiza za prevodjenje reaktora RA na novo 80% obogaceno gorivo, krunisani eksperimentalnom kampanjom reaktora RA u decembru 1976, kojom se zavrsava 17-to godisnji period koriscenja 2% obogacenog goriva i otpocinje period koriscenja novog 80% obogacenog goriva u reaktoru RA. Ovaj uspeh je od izuzetnog znacaja za reaktor RA i njegove korisnike, jer ce rezultovati u povecanju osnovne proizvodnje neutronskog fluksa od 50%, pri porastu cene kostanja rada reaktora od oko 4%. Podnet je zahtev za konacno odobrenje prelaznog rezima za uvodjenje ovog goriva, kojim se postize usteda od najmanje 2 200 000 dinara. Ovim se obezbedjuje da u 1977. godini i dalje, rad reaktora ne bude vise ometan ''kriticnim'' ili drugim eksperimentima u vezi sa uvodjenjem novog goriva u reaktor. Izvrsen je obiman program remontnih i drugih radova veoma akutne prirode, koji takodje omogucuju nesmetan rad u 1977. godini. Neki od ovih radova nisu radjeni nikad ranije, a drugi nisu radjeni u proteklih 6 godina. Najzacajniji zahvati ove vrste bili su: nabavka Al-cevi od specijalne legure, izrada i montiranje tehnoloskoh kanala; obimno ispitivanje uzroka curenja spoljasnjeg suda; remont teskovodne pumpe; zamena dva vertikalna tehnoloska kanala. Nabavljena je osnovna oprema za izgradnju sistema za hladjenje u slucaju udesa. Izvrseno je opremanje vrucih komora reaktora RA.

Lattice location of diffused Zn atoms in GaAs and InP single crystals

International Nuclear Information System (INIS)

Chan, L.Y.; Yu, K.M.; Ben-Tzur, M.; Haller, E.E.; Jaklevic, J.M.; Walukiewicz, W.; Hanson, C.M.

1991-01-01

We have investigated the saturation phenomenon of the free carrier concentration in p-type GaAs and InP single crystals doped by zinc diffusion. The free hole saturation occurs at 10 20 cm -3 for GaAs, but the maximum concentration for InP appears at mid 10 18 cm -3 . The difference in the saturation hole concentrations for these materials is investigated by studying the incorporation and the lattice location of the impurity zinc, an acceptor when located on a group III atom site. Zinc is diffused into the III-V wafers in a sealed quartz ampoule. Particle-induced x-ray emission with ion-channeling techniques are employed to determine the exact lattice location of the zinc atoms. We have found that over 90% of all zinc atoms occupy Ga sites in the diffused GaAs samples, while for the InP case, the zinc substitutionality is dependent on the cooling rate of the sample after high-temperature diffusion. For the slowly cooled sample, a large fraction (∼90%) of the zinc atoms form random precipitates of Zn 3 P 2 and elemental Zn. However, when rapidly cooled only 60% of the zinc forms such precipitates while the rest occupies specific sites in the InP. We analyze our results in terms of the amphoteric native defect model. We show that the difference in the electrical activity of the Zn atoms in GaAs and InP is a consequence of the different location of the Fermi level stabilization energy in these two materials

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

Science.gov (United States)

Yin, Xingtian; Battaglia, Corsin; Lin, Yongjing; Chen, Kevin; Hettick, Mark; Zheng, Maxwell; Chen, Cheng-Ying; Kiriya, Daisuke; Javey, Ali

2014-12-17

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO 2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO 2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm 2 and a high power conversion efficiency of 19.2%.

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Activity of the RA Reactor Physics group in 1980 - Definition of the Operation conditions for future safe and economical RA reactor operation with 80% enriched fuel; Prilog Ia - Rad sluzbe za fiziku reaktora RA u 1980. godini - Definisanje pogonskih uslova za dalji siguran i ekonomican rad reaktora RA sa 80% obogacenim gorivom

Energy Technology Data Exchange (ETDEWEB)

Martinc, R [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1980-12-15

During 1980. the RA reactor was not in operation. That is why this period was devoted to definition of operating conditions for further reactor operation with 80% enriched fuel. The fuel elements which were in the core at the moment of shutdown in March 1979will not be used again (388 80% enriched fuel elements, and 511 2% enriched fuel elements). The reactor will be operated only with 80% enriched fuel, staring with initiat core configuration with 440 elements on the borders gradually changing to equi;librium core with 720 fuel elements. The analyses were concerned with safety issues of future operation. [Serbo-Croat] Reaktor RA tokom 1980 godine nije radio. Zbog toga je ovaj period iskoriscen za intenzivan rad na definisanju pogonskih uslova za dalji rad reaktora sa 80% obogacenim gorivom. Gorivo sa kojim je reaktor prestao da radi marta 1979. godine (388 gorivnih elemenata 80% obogacenoh i 511 elementa 2% obogaceno) nece biti vraceno u jezgro, vec ce reaktor raditi samo sa 80% obogacenim gorivom, pocev od konfiguracije sa 440 elemenata na periferiji do ravnotezne konfiguracije sa 720 elemenata. Sve nalize su se bavile sigurnosnim aspektima rada reaktora sa visokoobogacenim gorivom u jezgru.

Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

DEFF Research Database (Denmark)

Yan, Lei; Johansen, Tom K.

2012-01-01

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit...... demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz. © 2012 European Microwave Assoc....

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

Science.gov (United States)

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

Science.gov (United States)

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments

International Nuclear Information System (INIS)

Schukfeh, M I; Hansen, A; Tornow, M; Storm, K; Thelander, C; Samuelson, L; Hinze, P; Weimann, T; Beyer, A

2014-01-01

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor–liquid–solid grown InAs nanowires with embedded InP segments of 10–60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap. (paper)

Segregation of antimony in InP in MOVPE

Energy Technology Data Exchange (ETDEWEB)

Weeke, Stefan

2008-07-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Segregation of antimony in InP in MOVPE

International Nuclear Information System (INIS)

Weeke, Stefan

2008-01-01

In this work the segregation of antimony in indium phosphide in metal organic vapour phase epitaxy (MOVPE)was systematically investigated. Therefore phosphine stabilized InP surfaces were treated with tri-methyl-antimony (TMSb) in MOVPE. An antimony rich Sb/InP surface was established, showing a typical spectra for the antimonides observed in reflectance anisotropy spectroscopy (RAS).Adsorption and desorption of antimony are investigated, as well as the incorporation of Sb during overgrowth of the Sb/InP surface with InP. Therefore the growth parameters temperature, TMSb partial pressure and treatment time are varied and their influence investigated. The experiments are monitored in-situ with RAS, the achieved data is correlated with ex-situ characterisation such as X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). It is shown that under treatment with TMSb a stable Sb/InP surface is formed within seconds, which does not change under further TMSb treatment. This process is rarely influenced by the TMSb partial pressure. On the contrary, the desorption of Sb is a very slow process. Two main processes can be distinguished: The desorption of excess Sb from the surface and the formation of the MOVPE prepared InP (2 x 1) surface. The reaction velocity of adsorption and desorption increases with temperature. Above a critical value the increase of TMSb partial pressure has no influence on the time for desorption. During overgrowth of the Sb/InP surface the opposite temperature dependence is observed: with increasing growth temperature the typical spectra for antimonides is observed longer. An analysis of the grown samples with XRD and SIMS showed the formation of an InPSb double quantum well. One layer is formed at the interface, the second one 50 nm-120 nm deep in the InP. The location of the 2nd InPSb layer can be correlated with the vanishing of the Sb signature in RAS. The distance between the quantum wells increases with growth temperature, until it

Detection of antifungal properties in Lactobacillus paracasei subsp. paracasei SM20, SM29, and SM63 and molecular typing of the strains.

Science.gov (United States)

Schwenninger, Susanne Miescher; von Ah, Ueli; Niederer, Brigitte; Teuber, Michael; Meile, Leo

2005-01-01

Lactobacilli isolated from different food and feed samples such as raw milk, cheese, yoghurt, olives, sour dough, as well as corn and grass silage, were screened for their antifungal activities. Out of 1,424 isolates tested, 82 were shown to be inhibitory to different yeasts (Candida spp. and Zygosaccharomyces bailii) and a Penicillium sp., which were previously isolated from spoiled yoghurt and fruits. Carbohydrate fermentation patterns suggested that a substantial portion, 25%, belonged to the Lactobacillus casei group, including L. casei, L. paracasei, and L. rhamnosus. The isolates SM20 (DSM14514), SM29 (DSM14515), and SM63 (DSM14516) were classified by PCR using species-specific primers to target the corresponding type strains (L. casei, L. paracasei, and L. rhamnosus) as controls. Further molecular typing methods such as randomly amplified polymorphic DNA, pulsed-field gel electrophoresis, and sequencing analysis of the 16S rRNA gene allowed classifying strains SM20, SM29, and SM63 as L. paracasei subsp. paracasei in accordance with the new reclassification of the L. casei group proposed by Collins et al.

Coercivity Recovery Effect of Sm-Fe-Cu-Al Alloy on Sm2Fe17N3 Magnet

Science.gov (United States)

Otogawa, Kohei; Asahi, Toru; Jinno, Miho; Yamaguchi, Wataru; Takagi, Kenta; Kwon, Hansang

2018-03-01

The potential of a Sm-Fe-Cu-Al binder for improvement of the magnetic properties of Sm2Fe17N3 was examined. Transmission electron microscope (TEM) observation of a Sm-Fe-Cu-Al alloy-bonded Sm2Fe17N3 magnet which showed high coercivity revealed that the Sm-Fe-Cu-Al alloy had an effect of removing the surface oxide layer of the Sm2 Fe17N3 grains. However, the Sm-Fe-Cu-Al binder was contaminated by carbon and nitrogen, which originated from the organic solvent used as the milling medium during pulverization. To prevent carbon and nitrogen contamination, the Sm-Fe- Cu-Al alloy was added directly on the surface of the Sm2Fe17N3 grains by sputtering. Comparing the recovered coercivity per unit amount of the added binder the uncontaminated binder-coated sample had a higher coercivity recovery effect than the milled binder-added sample. These results suggested that sufficient addition of the contamination-free Sm-Fe-Cu-Al binder has the possibility to reduce the amount of binder necessary to produce a high coercive Sm2Fe17N3 magnet.

Amorphization of Ge and InP studied using nuclear hyperfine methods

International Nuclear Information System (INIS)

Byrne, A.P.; Bezakova, E.; Glover, C.J.; Ridgway, M.C.

1999-01-01

The ion beam amorphization of InP and Ge has been studied using the Perturbed Angular Correlation (PAC) technique. Semiconductor samples were preimplanted with the radioisotope 111 In using a direct production-recoil implantation method and beams from the ANU Heavy-ion Facility. Following annealing samples were amorphized using Ge beams with doses between 2 x 10 12 ion/cm 2 and 5000 x 10 12 ion/cm 2 . For InP the PAC spectra identified three distinct regimes, crystalline, disordered and amorphous environments, with a smooth transition observed as a function of dose. The dose dependence of the relative fractions of the individual probe environments has been determined. A direct amorphization process consistent with the overlap model was quantified and evidence for a second amorphization process via the overlap of disordered regions was observed. The PAC method compares favorably with other methods used in its ability to differentiate changes at high dose. The results for InP will be compared with those in Ge. The implantation method will be discussed, as will developments in the establishment of a dedicated facility for the implantation of radioisotopes

Ultra-Fast Low Energy Switching Using an InP Photonic Crystal H0 Nanocavity

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting.......Pump-probe measurements on InP photonic crystal H0 nanocavities show large-contrast ultrafast switching at low pulse energy. For large pulse energies, high-frequency carrier density oscillations are induced, leading to pulsesplitting....

The lower yield point of InP and GaAs

International Nuclear Information System (INIS)

Siethoff, H.

1987-01-01

A study of the strain-rate and temperature dependence of the lower yield stress (τ ly ) in undoped InP and of the strain-rate dependence of τ ly in undoped and Zn-doped GaAs is reported. The deformation along (123) orientation was carried out in compression at constant strain rates ranging from 10 -5 to 10 -2 s -1 . The temperature range extended from 540 to 780 0 C. The activation energy and stress exponent of the dislocation velocity were calculated. Experiments have shown that τ ly of InP depends on temperature and strain rate in a manner similar to other semiconductors like Si and InSb, whereas τ ly of GaAs shows an unusual strain-rate dependence

[The Detection of Ultra-Broadband Terahertz Spectroscopy of InP Wafer by Using Coherent Heterodyne Time-Domain Spectrometer].

Science.gov (United States)

Zhang, Liang-liang; Zhang, Rui; Xu, Xiao-yan; Zhang, Cun-lin

2016-02-01

Indium Phosphide (InP) has attracted great physical interest because of its unique characteristics and is indispensable to both optical and electronic devices. However, the optical property of InP in the terahertz range (0. 110 THz) has not yet been fully characterized and systematically studied. The former researches about the properties of InP concentrated on the terahertz frequency between 0.1 and 4 THz. The terahertz optical properties of the InP in the range of 4-10 THz are still missing. It is fairly necessary to fully understand its properties in the entire terahertz range, which results in a better utilization as efficient terahertz devices. In this paper, we study the optical properties of undoped (100) InP wafer in the ultra-broad terahertz frequency range (0.5-18 THz) by using air-biased-coherent-detection (ABCD) system, enabling the coherent detection of terahertz wave in gases, which leads to a significant improvement on the dynamic range and sensitivity of the system. The advantage of this method is broad frequency bandwidth from 0.2 up to 18 THz which is only mainly limited by laser pulse duration since it uses ionized air as terahertz emitter and detector instead of using an electric optical crystal or photoconductive antenna. The terahertz pulse passing through the InP wafer is delayed regarding to the reference pulse and has much lower amplitude. In addition, the frequency spectrum amplitude of the terahertz sample signal drops to the noise floor level from 6.7 to 12.1 THz. At the same time InP wafer is opaque at the frequencies spanning from 6.7 to 12.1 THz. In the frequency regions of 0.8-6.7 and 12.1-18 THz it has relativemy low absorption coefficient. Meanwhile, the refractive index increases monotonously in the 0.8-6.7 THz region and 12.1-18 THz region. These findings will contribute to the design of InP based on nonlinear terahertz devices.

Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Jaffal, Ali; Patriarche, Gilles; Gendry, Michel

2018-02-01

Excitation photoluminescence spectroscopy is usually used to extract the crystal field splitting (ΔCR) and spin orbit coupling (ΔSO) parameters of wurtzite (Wz) InP nanowires (NWs). However, the equations expressing the valence band splitting are symmetric with respect to these two parameters, and a choice ΔCR > ΔSO or ΔCR InP NWs grown on silicon. The experimental results combined with a theoretical model and finite difference time domain calculations allow us to conclude that ΔCR > ΔSO in Wz InP.

RA reactor action plan for 1977 - Annex VI; Prilog VI - Plan rada reaktora RA za 1977. godinu

Energy Technology Data Exchange (ETDEWEB)

NONE

1976-12-15

In the RA reactor action plan for 1977 it is foreseen that the reactor would be operated for 181 days, mostly at nominal power of 6.5 MW. It is planned to produce 28236 MWh in total. Five reactor core exchanges (refuelling) are planned. The plan includes time for repair of components as well as for cooling. [Serbo-Croat] Plan rada reaktora RA predvidja rad tokom 181 dana, vecim delom na nominalnoj snazi od 6,5 MW tokom 1977. godine. Planirano je da ukupni rad iznosi 28236 MWh. Planom je predvidjeno i pet izmena goriva kao i vreme potrebno za remont opreme i hladjenje.

Wet storage of nuclear spent fuel from nuclear research reactor WWR-S

International Nuclear Information System (INIS)

Dragolici, A. C; Zorliu, A.; Petran, C.; Mincu, I.

2001-01-01

Nuclear research reactor WWR-S of IFIN-HH was commissioned on 29 July 1957 and shut down on December 1997. Now it is in Conservation State. During 40 years , the reactor was operated about 150,000 hours at variable power level ranging within 5 W and 3500 kW, and producing a total power of 9,510 MWday. After 20 years of operation a large number of spent fuel elements became available for storage exceeding the stocking capacity of the small cooling pond near reactor. Therefore, in 1980 the nuclear spent fuel repository was commissioned that contains at present all the fuel elements burnt in the reactor during years, minus 51 S-36 fuel assemblies which are conserved in the cooling pond. This repository contains 4 identical ponds, each of them having the storage capacity of 60 fuel assemblies. Every pond having the outer sizes of 2,750 mm (length) x 900 mm (breadth) x 5,700 mm (depth), is made from a special aluminum alloy (AlMg 3 ), with the walls thickness of 10 mm and bottom thickness of 15 mm. Pond's lids are made of cast iron having the thickness of 500 mm; they provide only the biological protection for the maintenance personnel. A 1.5 m concrete layer ensures the biological protection of the ponds. Over the fuel elements in every pond a 4.5 m water layer is provided, playing the role of biological protection and coolant. Inside the ponds exists an aluminum rack, which contains 60 locations for fuel storage. The spacing between these locations was determined from considerations of criticality and it is was the same with that of the cooling pond near the reactor. To have supplementary protection in the case of an accident which can destroy the entire rack and put together all the fuel elements thus forming critical mass, cadmium plates were placed on the ponds bottom for a better neutron absorption. Exploitation of cooling pond near the WWR-S reactor which has the identical structure with that of nuclear spent fuel repository, demonstrate the reliability and

1990's annual report of INPE's Plasma Associated Laboratory

International Nuclear Information System (INIS)

1991-06-01

This is the 1990's annual report of INPE's Plasma Associated Laboratory it contains information on current research developed at the laboratory including quiescent plasma, magnetized plasma, plasma centrifuge, plasma and radiation (gyrotron), ionic propulsion, and toroidal plasma. (A.C.A.S.)

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires.

Science.gov (United States)

Chauvin, Nicolas; Mavel, Amaury; Patriarche, Gilles; Masenelli, Bruno; Gendry, Michel; Machon, Denis

2016-05-11

The elastic properties of InP nanowires are investigated by photoluminescence measurements under hydrostatic pressure at room temperature and experimentally deduced values of the linear pressure coefficients are obtained. The pressure-induced energy shift of the A and B transitions yields a linear pressure coefficient of αA = 88.2 ± 0.5 meV/GPa and αB = 89.3 ± 0.5 meV/GPa with a small sublinear term of βA = βB = -2.7 ± 0.2 meV/GPa(2). Effective hydrostatic deformation potentials of -6.12 ± 0.04 and -6.2 ± 0.04 eV are derived from the results for the A and B transitions, respectively. A decrease of the integrated intensity is observed above 0.5 GPa and is interpreted as a carrier transfer from the first to the second conduction band of the wurtzite InP.

Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

Science.gov (United States)

Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

2014-03-26

We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

International Nuclear Information System (INIS)

Weinberg, I.; Swartz, C.K.; Hart, R.E. Jr.; Coutts, T.J.

1988-09-01

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor

Seismic examination for assessment of safety of location of atomic energy objects (by the example of the WWR-K reactor, Ala-Tau village)

International Nuclear Information System (INIS)

Belyashova, N.N.

2001-01-01

In the Republic of Kazakhstan there are 3 research reactors (the fourth one is temporarily stopped). One of the reactors in 1998 (WWR-K, situated in the Ala Tau village, nearby Almaty city) was conserved because of a number of reasons. Including the reason of the earth crust geological structure insufficient study for the ensuring the seismic safety of the reactor site location. In 1994-1996 a number of geological-geophysical studies was carried out by Kazakhstan specialists confirming the the geological-geophysical conditions in the reactor site location in view of its safety. These condition are meeting to IAEA requirements and up-to-date standards acting in Kazakhstan

Impacto da utilização de previsões "defasadas" no sistema de previsão de tempo por conjunto do CPTEC/INPE The impact of using lagged forecasts on the CPTEC/INPE ensemble prediction system

Directory of Open Access Journals (Sweden)

Lúcia Helena Ribas Machado

2010-03-01

Full Text Available Neste trabalho é descrita a aplicação da técnica de previsões defasadas no sistema de previsão de tempo por conjuntos do Centro de Previsão de Tempo e Estudos Climáticos (EPS-CPTEC/INPE. Os dados do CPTEC/INPE consistem em uma amostra de dois meses com previsões de 15 dias para as variáveis: altura geopotencial em 500 hPa, temperatura do ar no nível de 850 hPa, e pressão atmosférica ao nível médio do mar. O estudo consiste em investigar: 1 o desempenho do EPS-CPTEC/INPE utilizando a técnica de previsões defasadas comparado àquele do conjunto operacional; 2 a relação entre o espalhamento e o desempenho da previsão, a fim de avaliar o uso da dispersão como preditor do desempenho. Os resultados indicam que a utilização de previsões defasadas em 12h, melhora o desempenho do conjunto operacional, contribuindo para aumentar o espalhamento do conjunto e, conseqüentemente, reduzir a sub-dispersão do sistema. Também foi observado que o conjunto defasado tem desempenho comparável àquele do conjunto operacional e que há uma tendência de desempenho alto quando o espalhamento é baixo, para os prazos de 5 e 7 dias de previsão. Estes resultados servem como base para a implementação operacional desta técnica, que apresenta baixo custo computacional, e contribui para a utilização mais eficiente das previsões por conjunto do CPTEC/INPE.In this work we report the application of the lagged average forecasting technique to CPTEC/INPE ensemble forecast. The CPTEC/INPE data consist of two months samples of 15 days forecast for the variables: geopotential height at 500 hPa, air temperature at 850 hPa and mean sea level atmospheric pressure. We focus on the following: 1 Does the lagged averaged ensemble forecast improve forecast skill compared to the CPTEC/INPE operational ensemble? 2 Is the dispersion of the ensemble useful in predicting forecast skill? The results indicate that the utilization of 12h-lagged average forecasts

Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

International Nuclear Information System (INIS)

Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

2014-01-01

The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

The electrochemistry of InP in Br2/HBr solutions and its relevance to etching behaviour

NARCIS (Netherlands)

Notten, P.H.L.; Damen, A.A.J.M.

1987-01-01

Etch rate-potential curves of p-InP in HBr and Br2/HBr solutions in the dark and under illumination were correlated with current-potential curves. It was found that InP is etched via a "chemical" mechanism both by HBr and Br2. In aqueous HBr solutions InP is only etched at a significant rate at

Semiclassical Monte Carlo simulation studies of spin dephasing in InP and InSb nanowires

Directory of Open Access Journals (Sweden)

Ashish Kumar

2012-03-01

Full Text Available We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. D’yakonov-Perel (DP relaxation and Elliott-Yafet (EY relaxation are the two main relaxation mechanisms for spin dephasing in III-V channels. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction and structural inversion asymmetry (Rashba spin-orbit interaction. The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

Particle detectors based on InP Schottky diodes

Czech Academy of Sciences Publication Activity Database

Yatskiv, Roman; Grym, Jan

2012-01-01

Roč. 10, č. 7 (2012), C100051-C100055 ISSN 1748-0221 R&D Projects: GA MŠk(CZ) OC10021; GA MŠk LD12014 Institutional support: RVO:67985882 Keywords : Particle detector * High purity InP layer * Schottky diode Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.869, year: 2011

Design of mm-wave InP DHBT power amplifiers

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Yan, Lei

2011-01-01

In this paper suitable topologies for mm-wave integrated power amplifiers using InP DHBT technology is investigated. Among the standard topologies for mm-wave power cells: common-emitter, common-base, and cascode configuration, the cascode configuration proves the most promising in terms of output...

Phosphorus-hydrogen complexes in LEC-grown InP

International Nuclear Information System (INIS)

Ulrici, W.; Kwasniewski, A.; Czupalla, M.; Neubert, M.

2005-01-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm -1 . All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm -1 is due to a single hydrogen atom bonded to P in an indium vacancy (V In ) and that the line at 2315.6 cm -1 is due to the complex of four P-H bonds in an V In . In InP:H:D, this V In H 4 complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V In H n D m complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modeling of High-Speed InP DHBTs using Electromagnetic Simulation Based De-embedding

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor; Konczykowska, Agnieszka

2006-01-01

In this paper an approach for high-speed InP DHBT modeling valid to 110 GHz is reported. Electromagnetic (EM) simulation is applied to predict the embedded network model caused by pad parasitics. The form of the parasitic network calls for a 4-step de-embedding approach. Applying direct parameter...... extraction on the de-embedded device response leads to accurate small-signal model description of the InP DHBT. An parameter extraction approach is described for the Agilent HBT model, which assures consistency between large-signal and bias-dependent smallsignal modeling....

Temperature dependence of spin and orbital magnetic moments of Sm 4f electrons in (Sm, Gd)Al2

International Nuclear Information System (INIS)

Qiao, S.; Kimura, A.; Adachi, H.; Iori, K.; Miyamoto, K.; Xie, T.; Namatame, H.; Taniguchi, M.; Tanaka, A.; Muro, T.; Imada, S.; Suga, S.

2005-01-01

X-ray magnetic circular dichroism studies were carried out on (Sm, Gd)Al 2 , a ferromagnet without net magnetization at a certain compensation temperature. For Sm 4f electrons, the following understandings were obtained: the magnitude of expectation value of orbital magnetic moment (m L Sm ) is always larger than that of spin one (m S Sm ), so the cancellation of total spin and orbital magnetic moments cannot be achieved only by Sm 4f electrons and the contributions from Gd ions and conduction electrons are important; when the temperature decreases, the magnitude of both m L Sm and m S Sm increases and the gross magnetic moment due to the Sm 4f electrons monotonically deviates from zero. These results tell us that the temperature dependence of magnetic moments related with the electrons other than Sm 4f ones may play important roles in the subtle adjustment of the total spin and orbital magnetic moments to the zero magnetization at the compensation temperature

Dielectric spectroscopy of the SmQ* phase

Science.gov (United States)

Perkowski, P.; Bubnov, A.; Piecek, W.; Ogrodnik, K.; Hamplová, V.; Kašpar, M.

2011-11-01

Liquid crystal possessing two biphenyl moieties in the molecular core and lateral chlorine substitution far from the chiral chain has been studied by dielectric spectroscopy. On cooling from the isotropic phase, the material possesses the frustrated smectic Q* (SmQ*) and SmCA* phases. It has been confirmed by dielectric spectroscopy that the SmQ* phase can be related to the SmCA* anti-ferroelectric phase. However, only one relaxation process has been observed in the SmQ* phase, while in the SmCA*, two relaxations are clearly detectable. It seems that the mode found in the SmQ* can be connected with high-frequency anti-phase mode observed in the SmCA* phase. Its relaxation frequency is similar to PH relaxation frequency, but is weaker. The same relaxation has been observed even a few degrees above the SmQ*-Iso phase transition. Another explanation for the mode detected in SmQ* and isotropic phases can be molecular motions around short molecular axis.

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

2017-03-15

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Optical reflectance studies of highly specular anisotropic nanoporous (111) InP membrane

International Nuclear Information System (INIS)

Steele, J A; Lewis, R A; Sirbu, L; Enachi, M; Tiginyanu, I M; Skuratov, V A

2015-01-01

High-precision optical angular reflectance measurements are reported for a specular anisotropic nanoporous (111) InP membrane prepared by doping-assisted wet-electrochemical etching. The membrane surface morphology was investigated using scanning electron microscope imaging and revealed a quasi-uniform and self-organized nanoporous network consisting of semiconductor ‘islands’ in the sub-wavelength regime. The optical response of the nanoporous InP surface was studied at 405 nm (740 THz; UV), 633 nm (474 THz; VIS) and 1064 nm (282 THz; NIR), and exhibited a retention of basic macro-dielectric properties. Refractive index determinations demonstrate an optical anisotropy for the membrane which is strongly dependent on the wavelength of incident light, and exhibits an interesting inversion (positive anisotropy to negative) between 405 and 633 nm. The inversion of optical anisotropy is attributed to a strongly reduced ‘metallic’ behaviour in the membrane when subject to above-bandgap illumination. For the simplest case of sub-bandgap incident irradiation, the optical properties of the nanoporous InP sample are analysed in terms of an effective refractive index n eff and compared to effective media approximations. (invited article)

Optical isotype shifts of 146Sm and 151Sm

International Nuclear Information System (INIS)

Eastham, D.A.; Walker, P.M.; Griffith, J.A.R.; Evans, D.E.; England, J.G.; Grant, I.S.

1984-01-01

We have measured the optical isotope shifts of 146 Sm and 151 Sm by laser resonance fluorescence. From these measurements the changes in the mean square nuclear radii are: delta 2 > (A=144 to 146)=0.266(10) fm 2 , and delta 2 > (A=151 to 152)=0.262(10) fm 2 . These results, together with those of the stable isotopes, show that the average nuclear expansion of samarium can be accounted for by the liquid drop model with deformations. (orig.)

InP DHBT MMICs for millimeter-wave front-ends

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Hadziabdic, Dzenan; Krozer, Viktor

2009-01-01

In this paper, we show advanced MMIC's using InP DHBT technology. In particular, we demonstrate front-end circuits covering a broad frequency range from Q-band to E-band. Realizations of power amplifiers, quadrature VCOs, and sub-harmonic mixers, are presented and experimental results are discussed....

X-ray photoelectron spectroscopy/Ar+ ion profile study of thin oxide layers on InP

International Nuclear Information System (INIS)

Thurgate, S.M.; Erickson, N.E.

1990-01-01

The effect of incremental ion bombardment on the surface layers of an aqua regia etched InP sample was studied by monitoring the components of the In 3d 5/2 and O 1s x-ray photoelectron spectroscopy (XPS) lines as the sample was bombarded with low energy (1 keV) Ar + ions. The changes in the stoichiometry of the surface produced large shifts in the position of the In 3d and O 1s lines that were not paralleled by shifts in the P 2p line. Analysis of these shifts indicated that the surface was covered with a mixture of indium hydroxide and indium phosphate, with the phosphate closer to the InP substrate. It is proposed that this layer structure is due to differences in the dissolution rates of the oxidation products in the acid etch and the effect of the distilled water rinse. It may be possible to alter the composition of such oxides by carefully tailoring the etch conditions to optimize the kinetics for the particular oxide phase required. The analysis of the XPS lines also showed that the InP substrate was damaged at very low ion doses, and finally decomposed by the ion beam. When the ion ''cleaned'' sample was exposed to oxygen, a different oxide system was produced which consisted largely of In 2 O 3 and InPO 4 [or In(PO 3 ) x ]. This model of the oxidized surface of InP is consistent with other measurements and we conclude that ion milling together with XPS and careful curve fitting can be used to find the nature of the thin oxides on InP

Photoreflection investigations of the dopant activation in InP doped with beryllium ions

International Nuclear Information System (INIS)

Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

2005-01-01

The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

International Nuclear Information System (INIS)

Salman, S.; Folliot, H.; Le Pouliquen, J.; Chevalier, N.; Rohel, T.; Paranthoën, C.; Bertru, N.; Labbé, C.; Letoublon, A.; Le Corre, A.

2012-01-01

Highlights: ► The thermal conductivity of InAs on InP (1 1 3)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain compensating layers is presented. ► New data on the thermal conductivity of InP n-doped susbtrate are given. - Abstract: The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.

Effects of Be doping on InP nanowire growth mechanisms

Energy Technology Data Exchange (ETDEWEB)

Yee, R. J.; Gibson, S. J.; LaPierre, R. R. [Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Dubrovskii, V. G. [St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg (Russian Federation); Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

2012-12-24

Be-doped InP nanowires were grown by the gold-assisted vapour-liquid-solid mechanism in a gas source molecular beam epitaxy system. The InP nanowire length versus diameter [L(D)] dependence revealed an unexpected transition with increasing Be dopant concentration. At Be dopant concentration below {approx}10{sup 18} cm{sup -3}, nanowires exhibited the usual inverse L(D) relationship, indicating a diffusion-limited growth regime. However, as dopant concentration increased, the nanowire growth rate was suppressed for small diameters, resulting in an unusual L(D) dependence that increased before saturating in height at about 400 nm. The cause of this may be a change in the droplet chemical potential, introducing a barrier to island nucleation. We propose a model accounting for the limitations of diffusion length and monolayer nucleation to explain this behaviour.

Ionospheric research at INPE

International Nuclear Information System (INIS)

Abdu, M.A.

1984-01-01

Ionosphere investigations at INPE are mainly concerned with the problems of equatorial and tropical ionospheres and their electrodynamic coupling with the high latitude ionosphere. Present research objectives include investigations in the following specific areas: equatorial ionospheric plasma dynamics; plasma irregularity generation and morphology, and effects on space borne radar operations; ionospheric response to disturbance dynamo and magnetospheric electric fields; aeronomic effcts of charged particle precipitation in the magnetic anomaly, etc. These problems are being investigated using experimental datacollected from ionospheric diagnostic instruments being operated at different locations in Brazil. These instruments are: ionosondes, VHF electronic polarimeters, L-band scintillation receivers, airglow photometers, riometers and VLF receivers. A brief summary of the research activities and some recnet results will be presented. (Author) [pt

SM18 Visits and Access

CERN Multimedia

2012-01-01

  VISITS The rules and conditions to be followed for visits in the SM18 Hall are laid out in the EDMS 1205328 document. No visit is allowed without prior reservation.   ACCESS Special access right is needed ONLY from 7 p.m. to 7 a.m. and during week-ends. From 1 December, the current SM18 access database will be closed and a new one “SM18-OWH outside normal hours” started from scratch. Requests, via EDH SM18-OWH, will have to be duly justified.   For further information, please contact Evelyne Delucinge.

Facile synthesis of uniform large-sized InP nanocrystal quantum dots using tris(tert-butyldimethylsilyl)phosphine

Science.gov (United States)

2012-01-01

Colloidal III-V semiconductor nanocrystal quantum dots [NQDs] have attracted interest because they have reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals are limited by difficulties in their synthesis. In particular, it is difficult to control nucleation because the molecular bonds in III-V semiconductors are highly covalent. A synthetic approach of InP NQDs was presented using newly synthesized organometallic phosphorus [P] precursors with different functional moieties while preserving the P-Si bond. Introducing bulky side chains in our study improved the stability while facilitating InP formation with strong confinement at a readily low temperature regime (210°C to 300°C). Further shell coating with ZnS resulted in highly luminescent core-shell materials. The design and synthesis of P precursors for high-quality InP NQDs were conducted for the first time, and we were able to control the nucleation by varying the reactivity of P precursors, therefore achieving uniform large-sized InP NQDs. This opens the way for the large-scale production of high-quality Cd-free nanocrystal quantum dots. PMID:22289352

Triple and Quadruple Junctions Thermophotovoltaic Devices Lattice Matched to InP

Science.gov (United States)

Bhusal, L.; Freundlich, A.

2007-01-01

Thermophotovoltaic (TPV) conversion of IR radiation emanating from a radioisotope heat source is under consideration for deep space exploration. Ideally, for radiator temperatures of interest, the TPV cell must convert efficiently photons in the 0.4-0.7 eV spectral range. Best experimental data for single junction cells are obtained for lattice-mismatched 0.55 eV InGaAs based devices. It was suggested, that a tandem InGaAs based TPV cell made by monolithically combining two or more lattice mismatched InGaAs subcells on InP would result in a sizeable efficiency improvement. However, from a practical standpoint the implementation of more than two subcells with lattice mismatch systems will require extremely thick graded layers (defect filtering systems) to accommodate the lattice mismatch between the sub-cells and could detrimentally affect the recycling of the unused IR energy to the emitter. A buffer structure, consisting of various InPAs layers, is incorporated to accommodate the lattice mismatch between the high and low bandgap subcells. There are evidences that the presence of the buffer structure may generate defects, which could extend down to the underlying InGaAs layer. The unusual large band gap lowering observed in GaAs(1-x)N(x) with low nitrogen fraction [1] has sparked a new interest in the development of dilute nitrogen containing III-V semiconductors for long-wavelength optoelectronic devices (e.g. IR lasers, detector, solar cells) [2-7]. Lattice matched Ga1-yInyNxAs1-x on InP has recently been investigated for the potential use in the mid-infrared device applications [8], and it could be a strong candidate for the applications in TPV devices. This novel quaternary alloy allows the tuning of the band gap from 1.42 eV to below 1 eV on GaAs and band gap as low as 0.6eV when strained to InP, but it has its own limitations. To achieve such a low band gap using the quaternary Ga1-yInyNxAs1-x, either it needs to be strained on InP, which creates further

HDDR in Sm-Co alloys - a new method for magnetic hardening of Sm-Co permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Kubis, M.; Handstein, A.; Gebel, B.; Mueller, K.-H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe; Gutfleisch, O. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe]|[Birmingham Univ. (United Kingdom). School of Metallurgy and Materials

1998-07-01

Investigations on the hydrogen absorption behavior of different Sm-Co alloys with 1:5 and 2:17 structure by differential scanning calorimetry (DSC) at enhanced hydrogen pressures between 1 MPa and 7 MPa indicated different hydrogen absorption events. X-ray diffraction (XRD) studies and microstructural investigations showed clearly the disproportionation of the Sm-Co phases into Sm hydride and Co or Co-rich phases for hydrogen pressures above 0.5 MPa. The favourable effect of high hydrogen pressures can be explained in terms of a decrease of the free enthalpy of the samarium hydride for increasing hydrogen pressures. Additionally, Sm-Co alloys of both types were reactively milled under hydrogen at enhanced temperatures. The reactively milled powders showed again the products of the disproportionation reaction. A recombination of Sm-Co phases by removing the hydrogen in a second heat treatment was successful for both methods. Investigations of the magnetic properties showed coercivities {mu}{sub OJ}H{sub C} of up to 2.1 T for high pressure HDDR powders of SmCo{sub 5} material, demonstrating clearly the positive effect of the hydrogen treatment on the coercivity. The reactively milled powders showed for recombination temperatures {<=}700 C a remanence enhancement which could be attributed to the exchange coupling of the nanoscaled grains. A maximum coercivity {mu}{sub OJ}H{sub C} of 3.7 T was achieved for SmCo{sub 5} and a maximum energy product (BH){sub max} of 82 kJ/m{sup 3} was measured for an Sm-rich Sm{sub 2}Co{sub 17} sample. (orig.)

HDDR in Sm-Co alloys - a new method for magnetic hardening of Sm-Co permanent magnets

International Nuclear Information System (INIS)

Kubis, M.; Handstein, A.; Gebel, B.; Mueller, K.-H.; Schultz, L.; Gutfleisch, O.; Birmingham Univ.

1998-01-01

Investigations on the hydrogen absorption behavior of different Sm-Co alloys with 1:5 and 2:17 structure by differential scanning calorimetry (DSC) at enhanced hydrogen pressures between 1 MPa and 7 MPa indicated different hydrogen absorption events. X-ray diffraction (XRD) studies and microstructural investigations showed clearly the disproportionation of the Sm-Co phases into Sm hydride and Co or Co-rich phases for hydrogen pressures above 0.5 MPa. The favourable effect of high hydrogen pressures can be explained in terms of a decrease of the free enthalpy of the samarium hydride for increasing hydrogen pressures. Additionally, Sm-Co alloys of both types were reactively milled under hydrogen at enhanced temperatures. The reactively milled powders showed again the products of the disproportionation reaction. A recombination of Sm-Co phases by removing the hydrogen in a second heat treatment was successful for both methods. Investigations of the magnetic properties showed coercivities μ OJ H C of up to 2.1 T for high pressure HDDR powders of SmCo 5 material, demonstrating clearly the positive effect of the hydrogen treatment on the coercivity. The reactively milled powders showed for recombination temperatures ≤700 C a remanence enhancement which could be attributed to the exchange coupling of the nanoscaled grains. A maximum coercivity μ OJ H C of 3.7 T was achieved for SmCo 5 and a maximum energy product (BH) max of 82 kJ/m 3 was measured for an Sm-rich Sm 2 Co 17 sample. (orig.)

Use of halide transport in epitaxial growth of InP and related compounds

Energy Technology Data Exchange (ETDEWEB)

Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

1996-12-31

In this paper methods and results in the InP (and related) growth practice are reviewed, classified and summarized on the basis of the recent literature. The aim is to show the present place and role of the halogen transport in the epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of the compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of the halogen transport. Chlorine assisted MOVPE has an increasing role.

The Protein Kinase SmSnRK2.6 Positively Regulates Phenolic Acid Biosynthesis in Salvia miltiorrhiza by Interacting with SmAREB1.

Science.gov (United States)

Jia, Yanyan; Bai, Zhenqing; Pei, Tianlin; Ding, Kai; Liang, Zongsuo; Gong, Yuehua

2017-01-01

Subclass III members of the sucrose non-fermenting-1-related protein kinase 2 (SnRK2) play essential roles in both the abscisic acid signaling and abiotic stress responses of plants by phosphorylating the downstream ABA-responsive element (ABRE)-binding proteins (AREB/ABFs). This comprehensive study investigated the function of new candidate genes, namely SmSnRK2.3 , SmSnRK2.6 , and SmAREB1 , with a view to breeding novel varieties of Salvia miltiorrhiza with improved stress tolerance stresses and more content of bioactive ingredients. Exogenous ABA strongly induced the expression of these genes. PlantCARE predicted several hormones and stress response cis -elements in their promoters. SmSnRK2.6 and SmAREB1 showed the highest expression levels in the leaves of S. miltiorrhiza seedlings, while SmSnRK2.3 exhibited a steady expression in their roots, stems, and leaves. A subcellular localization assay revealed that both SmSnRK2.3 and SmSnRK2.6 were located in the cell membrane, cytoplasm, and nucleus, whereas SmAREB1 was exclusive to the nucleus. Overexpressing SmSnRK2.3 did not significantly promote the accumulation of rosmarinic acid (RA) and salvianolic acid B (Sal B) in the transgenic S. miltiorrhiza hairy roots. However, overexpressing SmSnRK2.6 and SmAREB1 increased the contents of RA and Sal B, and regulated the expression levels of structural genes participating in the phenolic acid-branched and side-branched pathways, including SmPAL1 , SmC4H , Sm4CL1 , SmTAT , SmHPPR , SmRAS , SmCHS , SmCCR , SmCOMT , and SmHPPD . Furthermore, SmSnRK2.3 and SmSnRK2.6 interacted physically with SmAREB1. In summary, our results indicate that SmSnRK2.6 is involved in stress responses and can regulate structural gene transcripts to promote greater metabolic flux to the phenolic acid-branched pathway, via its interaction with SmAREB1 , a transcription factor. In this way, SmSnRK2.6 contributes to the positive regulation of phenolic acids in S. miltiorrhiza hairy roots.

The Protein Kinase SmSnRK2.6 Positively Regulates Phenolic Acid Biosynthesis in Salvia miltiorrhiza by Interacting with SmAREB1

Directory of Open Access Journals (Sweden)

Yanyan Jia

2017-08-01

Full Text Available Subclass III members of the sucrose non-fermenting-1-related protein kinase 2 (SnRK2 play essential roles in both the abscisic acid signaling and abiotic stress responses of plants by phosphorylating the downstream ABA-responsive element (ABRE-binding proteins (AREB/ABFs. This comprehensive study investigated the function of new candidate genes, namely SmSnRK2.3, SmSnRK2.6, and SmAREB1, with a view to breeding novel varieties of Salvia miltiorrhiza with improved stress tolerance stresses and more content of bioactive ingredients. Exogenous ABA strongly induced the expression of these genes. PlantCARE predicted several hormones and stress response cis-elements in their promoters. SmSnRK2.6 and SmAREB1 showed the highest expression levels in the leaves of S. miltiorrhiza seedlings, while SmSnRK2.3 exhibited a steady expression in their roots, stems, and leaves. A subcellular localization assay revealed that both SmSnRK2.3 and SmSnRK2.6 were located in the cell membrane, cytoplasm, and nucleus, whereas SmAREB1 was exclusive to the nucleus. Overexpressing SmSnRK2.3 did not significantly promote the accumulation of rosmarinic acid (RA and salvianolic acid B (Sal B in the transgenic S. miltiorrhiza hairy roots. However, overexpressing SmSnRK2.6 and SmAREB1 increased the contents of RA and Sal B, and regulated the expression levels of structural genes participating in the phenolic acid-branched and side-branched pathways, including SmPAL1, SmC4H, Sm4CL1, SmTAT, SmHPPR, SmRAS, SmCHS, SmCCR, SmCOMT, and SmHPPD. Furthermore, SmSnRK2.3 and SmSnRK2.6 interacted physically with SmAREB1. In summary, our results indicate that SmSnRK2.6 is involved in stress responses and can regulate structural gene transcripts to promote greater metabolic flux to the phenolic acid-branched pathway, via its interaction with SmAREB1, a transcription factor. In this way, SmSnRK2.6 contributes to the positive regulation of phenolic acids in S. miltiorrhiza hairy roots.

Chemical etching and polishing of InP

International Nuclear Information System (INIS)

Kurth, E.; Reif, A.; Gottschalch, V.; Finster, J.; Butter, E.

1988-01-01

This paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre-etching with (NH 4 ) 2 S 2 O 8 :H 2 SO 4 :H 2 O and a polishing with 1% bromine in methanol produce optically smooth (100)-and (111) P surfaces free of oxides. (author)

InP nanowire array solar cell with cleaned sidewalls

NARCIS (Netherlands)

Cui, Y.; Plissard, S.; Wang, J.; Vu, T.T.T.; Smalbrugge, E.; Geluk, E.J.; de Vries, T.; Bolk, J.; Trainor, M.J.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

2013-01-01

We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ

Lattice defects in LPE InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates

International Nuclear Information System (INIS)

Ishida, K.; Matsumoto, Y.; Taguchi, K.

1982-01-01

Lattice defects generated during LPE growth of InP-InGaAsP-InGaAs structure epitaxial layers on InP substrates are studied. Two different kinds of dislocations are observed at the two interfaces of the epitaxial layers; at the InP-InGaAsP interface, misfit dislocations are generated in the InP layer by carry over of InGaAsP melt into the InP one and at the InGaAs-InP interface, V-shaped dislocations are generated in the InGaAs layer. It is shown that the critical amount of lattice mismatch to suppress generation of misfit dislocations in InP is about two times smaller than that of other III-V compound semiconductors. Conditions to suppress the generation of these dislocations are clarified. (author)

Post deposition annealing effect on the properties of Al2O3/InP interface

Science.gov (United States)

Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

2018-02-01

Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

Model of deep centers formation and reactions in electron irradiated InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.; Gilleron, M.

1986-01-01

We present a model of the production of deep centers and their reactions following electron irradiations in InP. We propose that the dominant hole traps in p-InP and electron traps in p + n InP junctions are complexes between shallow acceptors and a common intrinsic entity, the phosphorus interstitial or vacancy. The reactions observed below and above room temperature are then due to a local mobility of this entity, which can be obtained as well by thermal as by electronic stimulation of the reactions. This model implies the long-range migration (at least down to 16 K) of this entity, and explains the strongly different behavior of n-InP compared to p-InP samples

Thermal crosstalk investigation in an integrated InP multiwavelength laser

NARCIS (Netherlands)

Gilardi, G.; Wale, M.J.; Smit, M.K.

2012-01-01

We numerically investigate the thermal crosstalk effects in an integrated InP multiwavelength laser. The multiwavelength laser under investigation consists of a number of Distributed Bragg Reflector lasers and an Arrayed Waveguide Grating. Each laser generates a fixed wavelength and the Arrayed

Low-frequency photocurrent oscillations in InP in magnetic field

International Nuclear Information System (INIS)

Slobodchikov, S.V.; Salikhov, Kh.M.; Kovalevskaya, G.G.

1994-01-01

Results of investigations of magnetic field effect on the oscillating photocurrent in InP crytals are presented. It is shown that the magnetic field plays the part of an additional source of photocarrier injection in the sample bulk. 3 refs., 2 figs

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

International Nuclear Information System (INIS)

Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

1990-01-01

Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

Phosphorus-hydrogen complexes in LEC-grown InP

Energy Technology Data Exchange (ETDEWEB)

Ulrici, W. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Kwasniewski, A.; Czupalla, M.; Neubert, M. [Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

2005-03-01

In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm{sup -1}. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally proved that the line at 2202.4 cm{sup -1} is due to a single hydrogen atom bonded to P in an indium vacancy (V{sub In}) and that the line at 2315.6 cm{sup -1} is due to the complex of four P-H bonds in an V{sub In}. In InP:H:D, this V{sub In}H{sub 4} complex gives rise to six vibrational lines in the region of P-H modes and six lines in the region of P-D modes because of the five different types of V{sub In}H{sub n}D{sub m} complexes. The measured frequencies of these 12 lines are in excellent agreement with those obtained from ab initio calculations reported in the literature. Additional P-H complexes are discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

SM-1420 computer conjugation with the ES-5017 magnetic tape storage device and the SM-6313 printer

International Nuclear Information System (INIS)

Zhurkin, V.V.; Safonov, A.A.; Troitskij, A.N.

1987-01-01

The flow sheets are given and the methods of the technical implementation of expansion units of SM 5002.4 controllers to connect NML ES-5017 and analogue-digital printer ATsPU SM-6818, respectively, to SM-1420 computer are described

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

International Nuclear Information System (INIS)

Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

2007-01-01

Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

Science.gov (United States)

Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

2018-04-01

To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

Småhuse: Indretning og funktion

DEFF Research Database (Denmark)

Hansen, Ernst Jan de Place; Sigbrand, Lone; Frandsen, Anne Kathrine

Denne anvisning omhandler generelle krav og anbefalinger til indretning og funktion af nybyggede småhuse i henhold til bestemmelserne i Bygningsreglement 2010 (BR10). Småhuse - Indretning og funktionSmåhuse omfatter fritliggende og sammenbyggede enfamiliehuse med lodret lejlighedsskel i indtil...

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

International Nuclear Information System (INIS)

Wang Yuanli; Jin, P.; Ye, X.L.; Zhang, C.L.; Shi, G.X.; Li, R.Y.; Chen, Y.H.; Wang, Z.G.

2006-01-01

Highly uniform InAs quantum wires (QWRs) have been obtained on the In 0.5 Al 0.5 As buffer layer grown on the InP substrate 8 (convolutionsign) off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In 0.5 Al 0.5 As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001)

All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

DEFF Research Database (Denmark)

Vukovic, Dragana; Yu, Yi; Heuck, Mikkel

2013-01-01

Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3.......Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3....

Formation mechanisms for the dominant kinks with different angles in InP nanowires.

Science.gov (United States)

Zhang, Minghuan; Wang, Fengyun; Wang, Chao; Wang, Yiqian; Yip, SenPo; Ho, Johnny C

2014-01-01

The morphologies and microstructures of kinked InP nanowires (NWs) prepared by solid-source chemical vapor deposition method were examined using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Statistical analysis and structural characterization reveal that four different kinds of kinks are dominant in the grown InP NWs with a bending angle of approximately 70°, 90°, 110°, and 170°, respectively. The formation mechanisms of these kinks are discussed. Specifically, the existence of kinks with bending angles of approximately 70° and 110° are mainly attributed to the occurrence of stacking faults and nanotwins in the NWs, which could easily form by the glide of {111} planes, while approximately 90° kinks result from the local amorphorization of InP NWs. Also, approximately 170° kinks are mainly caused by small-angle boundaries, where the insertion of extra atomic planes could make the NWs slightly bent. In addition, multiple kinks with various angles are also observed. Importantly, all these results are beneficial to understand the formation mechanisms of kinks in compound semiconductor NWs, which could guide the design of nanostructured materials, morphologies, microstructures, and/or enhanced mechanical properties.

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Excited states in 146Sm and 147Sm

International Nuclear Information System (INIS)

Kownacki, J.; Sujkowski, Z.; Hammaren, E.; Liukkonen, E.; Piiparinen, M.; Lindblad, Th.; Ryde, H.

1979-10-01

The sup(144,146)Nd(α,xn) and sup(146,148)Nd( 3 He,xn) reactions with Esub(α) = 20 - 43 MeV and E 3 sub(He) = 19 - 27 MeV are used to investigate excited states in the isotopes 146 Sm and 147 Sm. The experiments involve measurements of singles γ-ray spectra and conversion electron spectra, γ-ray angular distributions and three parameter (E sub(γ)E sub(γ) time) coincidences. From these experiments information is obtained for states with spin up to I = 13 + and I = 27/2 - , respectively, These states are interpeted within the framework of the cluster-vibration model (CVM) as well as the shell model. (author)

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Highly doped InP as a low loss plasmonic material for mid-IR region.

Science.gov (United States)

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

X-ray diffraction analysis of multilayer porous InP(001) structure

Czech Academy of Sciences Publication Activity Database

Lomov, A. A.; Punegov, V. I.; Vasil'ev, A. L.; Nohavica, Dušan; Gladkov, Petar; Kartsev, A. A.; Novikov, D. V.

2010-01-01

Roč. 55, č. 2 (2010), s. 182-190 ISSN 1063-7745 Institutional research plan: CEZ:AV0Z20670512 Keywords : silicon layers * INP Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.644, year: 2010

Roadmap for integration of InP based photonics and silicon electronics

NARCIS (Netherlands)

Williams, K.A.

2015-01-01

We identify the synergies and a roadmap for the intimate integration of InP photonic integrated circuits and Silicon electronic ICs using wafer-scale processes. Advantages are foreseen in terms of bandwidth, energy savings and package simplification.

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

High brightness InP micropillars grown on silicon with Fermi level splitting larger than 1 eV.

Science.gov (United States)

Tran, Thai-Truong D; Sun, Hao; Ng, Kar Wei; Ren, Fan; Li, Kun; Lu, Fanglu; Yablonovitch, Eli; Chang-Hasnain, Constance J

2014-06-11

The growth of III-V nanowires on silicon is a promising approach for low-cost, large-scale III-V photovoltaics. However, performances of III-V nanowire solar cells have not yet been as good as their bulk counterparts, as nanostructured light absorbers are fundamentally challenged by enhanced minority carriers surface recombination rates. The resulting nonradiative losses lead to significant reductions in the external spontaneous emission quantum yield, which, in turn, manifest as penalties in the open-circuit voltage. In this work, calibrated photoluminescence measurements are utilized to construct equivalent voltage-current characteristics relating illumination intensities to Fermi level splitting ΔF inside InP microillars. Under 1 sun, we show that splitting can exceed ΔF ∼ 0.90 eV in undoped pillars. This value can be increased to values of ΔF ∼ 0.95 eV by cleaning pillar surfaces in acidic etchants. Pillars with nanotextured surfaces can yield splitting of ΔF ∼ 0.90 eV, even though they exhibit high densities of stacking faults. Finally, by introducing n-dopants, ΔF of 1.07 eV can be achieved due to a wider bandgap energy in n-doped wurzite InP, the higher brightness of doped materials, and the extraordinarily low surface recombination velocity of InP. This is the highest reported value for InP materials grown on a silicon substrate. These results provide further evidence that InP micropillars on silicon could be a promising material for low-cost, large-scale solar cells with high efficiency.

RA reactor Action plan for 1978 - Annex VI; Prilog VI - Plan rada reaktora RA za 1978. godinu

Energy Technology Data Exchange (ETDEWEB)

NONE

1977-12-15

This annex include a detailed monthly action plan of the RA reactor for 1978. It was planned that the reactor will operate at nominal and lower power levels for 158 days. The plan is made with the aim to achieve same annual neutron flux as in 1977, which is somewhat higher then the annual production in the period from 1968-1975. [Serbo-Croat] Ovaj prilog sadrzi detaljan plan rada reaktora RA za 1978. godinu. Planirano je da reaktor radi na nominalnoj snazi of 6,5 MW i na manjim snagama ukupno 158 dana. Plan je napravljen tako da se ostvari godisnja proizvodnja neutronskog fluksa u obimu koji je relaizovan 1977. godine sto je nesto vise od godisnje proizvodnje u periodu 1968-1975.

Mid-IR optical properties of silicon doped InP

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Han, Li; Norrman, Kion

2017-01-01

of growth conditions on the optical and electrical properties of silicon doped InP (InP:Si) in the wavelength range from 3 to 40 μm was studied. The carrier concentration of up to 3.9 × 1019 cm-3 is achieved by optimizing the growth conditions. The dielectric function, effective mass of electrons and plasma...

Radiochemical schemes of obtaining 89Sr and 90Y radionuclides

International Nuclear Information System (INIS)

Usarov, Z. O.

2010-03-01

Key words: strontium-89, yttrium-90, extraction and extraction-chromatographic purification of radionuclides, radiopharmaceuticals. Subjects of research: strontium-89 and yttrium-90 radionuclides and their chloride forms. Purpose of work is developing of radiochemical technologies on obtaining of 89 Sr and 90 Y on the WWR-SM reactor with high radionuclide purity. Methods of research: extraction and extraction-chromatographic methods of radionuclides separation, beta- and gamma-spectrometric methods of activity measuring. The results obtained and their novelty: Were determined the conformity to laws of Y and Sr distribution in two-phase systems TBP-HNO 3 , TBP-NH 4 NO 3 , TBP-HCI, HDEHP-NO 3 , HDEHP-NH 4 NO 3 and HDEHP-HCI. Were determined the conformity to laws of Y and Sr distribution in systems with craun ethers DB-18K-6 and DTBDB-18K-6 from water solutions of HNO 3 . Radiochemical technologies on obtaining of 89 Sr and 90 Y radionuclides including radiochemical process of yttrium target with using the systems TBP-HNO 3 and HDEHP/Teflone were developed. Practical value: the radiochemical technology of obtaining 89 Sr with high radionuclide purity was developed. The method of preparation a chloride compound of 89 SrCl 2 which is used as a drug form for preparation of 89 Sr- 'Metastron' was developed. The relatively simple method of on the way obtaining 90 Y in the reactor with high radionuclidic purity that is useful for follow using in medical practice was offered. Degree of embed and economic effectivity: the developed technologies have approbation in manufacturing conditions in Radiopreparat Enterprise of INP AS RU and were offered for receiving of domestic preparations against of import foreign analogues. The statement about using the invention by obtained patent is attached to dissertation. Field of application: the received results will be introduced in manufacture at Radiopreparat Enterprise of INP AS RU for receiving of domestic preparations

Effect of Fe inter-diffusion on properties of InP layers grown with addition of RE elements

International Nuclear Information System (INIS)

Prochazkova, O.; Zavadil, J.; Zdansky, K.

2005-01-01

This contribution reports the redistribution behaviour of Fe during the growth of InP layers from liquid phase with addition of some rare earth elements on semi-insulating InP:Fe substrates. We have studied the influence of different rare earths on the Fe diffusion into InP layer and compared it with the phenomenon of an extraction of iron from Fe doped materials into adjacent layers doped by Zn, Cd and Be, reported recently. In the case of Tm addition a conversion of electrical conductivity of InP layer to semi-insulating as a consequence of Fe diffusion has been observed while no significant Fe inter-diffusion has been confirmed in the presence of other investigated rare earth additions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Operation, maintenance and utilization of the RA reactor, Annual report for 1980; Pogon, odrzavanje i eksploatacija reaktora RA, Izvestaj o radu u 1980. godini

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1980-12-15

During 1980 the activities of RA reactor staff was conducted in two directions: repair works and determination of the state of the existing equipment; and preparing and constructing additional equipment and completing the documentation needed to fulfill the new legal regulations. preparation of the existing equipment for future operation was finished, but construction of the additional equipment (according to the regulations) is not done at planned rate due to different reasons such as lack of budget, administration, import. This report includes a chapter devoted to the analysis of the operation difficulties that caused prohibition of reactor operation as well as difficulties in achievement of the planned activities for 1980. Data about financial issues are included as well. [Serbo-Croat] U toku 1980. godine rad OOUR-a Nuklearni reaktor RA odvijao se u dva smera: remontnim radovima i utvrdjivanju stanja postojece opreme i u pripremi i ugradnji potrebne dodatne opreme i kompletiranju neophodne dokumentacije prema novim zakonskim propisima. Priprema postojece opreme za rad je u potpunosti izvrsena, dok se projekti i ugradnja dodatne opreme (prema zakonskim obavezama) ne odvija potrebnom brzinom zbog raznih objektivnih razloga, kao nedostatak sredstava, odobrenja, uvoza. Ovaj izvestaj sadrzi poglavlje posveceno analizi teskoca u radu koje su dovele do zabrane rada reaktora, i teskoca u realizovanju plana rada u 1980. godini, ako i podatke o finansiranju projekta 'pogon, odrzavanje i eksploatacija reaktora RA'.

Neutron flux calculations for the Rossendorf research reactor in (hex)- and (hex,z)-geometry using SNAP-3D

International Nuclear Information System (INIS)

Koch, R.; Findeisen, A.

1986-04-01

The multigroup neutron diffusion theory code SNAP-3D has been used to perform time independent neutron flux and power calculations of the 10 MW Rossendorf research reactor of the type WWR-SM. The report describes these calculations, as well as the actual reactor configuration, some details of the code SNAP-3D, and two- and three-dimensional reactor models. For evaluating the calculations some flux values and control rod worths have been compared with those of measurements. (author)

Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy

Science.gov (United States)

De Luca, Marta; Polimeni, Antonio

2017-12-01

Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as building components of novel devices. The presence of wurtzite (WZ) phase in the lattice structure of non-nitride III-V NWs is one of the most surprising findings in these nanostructures: this phase, indeed, cannot be found in the same materials in the bulk form, where the zincblende (ZB) structure is ubiquitous, and therefore the WZ properties are poorly known. This review focuses on WZ InP NWs, because growth techniques have reached a high degree of control on the structural properties of this material, and optical studies performed on high-quality samples have allowed determining the most useful electronic properties, which are reviewed here. After an introduction summarizing the reasons for the interest in WZ InP nanowires (Sec. I), we give an overview on growth process and structural and optical properties of WZ InP NWs (Sec. II). In Sec. III, a complete picture of the energy and symmetry of the lowest-energy conduction and valence bands, as assessed by polarization-resolved photoluminescence (PL) and photoluminescence-excitation (PLE) studies is drawn and compared to all the available theoretical information. The elastic properties of WZ InP (determined by PL under hydrostatic pressure) and the radiative recombination dynamics of spatially direct and indirect (namely, occurring across the WZ/ZB interfaces) transitions are also discussed. Section IV, focuses on the magneto-optical studies of WZ InP NWs. The diagram of the energy levels of excitons in WZ materials—with and without magnetic field—is first provided. Then, all theoretical and experimental information available about the changes in the transport properties (i.e., carrier effective mass) caused by the ZB→WZ phase variation are reviewed. Different NW/magnetic field geometrical configurations, sensitive to polarization selection rules, highlight anisotropies in the diamagnetic shifts, Zeeman splitting

Experimental operation of the RA reactor with 4 fuel channels containing 80% enriched dispersion fuel - Operational Report; Radni izvestaj - Eksperimentalna kampanja reaktora RA sa 4 kanala sa 80% obogacenim disperzionim gorivom

Energy Technology Data Exchange (ETDEWEB)

Martinc, R; Milosevic, M; Cupac, S; Kozomara, S [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1976-12-15

usmerene su na prelazni rezim na bazi parcijalnog uvodjenja novog goriva u reaktor, tj. na reaktorsko jezgro sa dve vrste goriva. Cilj ovih analiza i priprema jeste obezbedjivanje svih uslova za siguran rad reaktora RA u prelaznom rezimu. Ove analize i pripreme su uglavnom kompletirane. Medjutim, nedostaje jos eksperimentalni podatak o utrosku goriva za odredjeni rad reaktora na nominalnoj snazi tj. o dnevnom padu ugradjenog viska reaktivnosti. Ovaj podatak neophodan je kod planiranja izmena goriva (kolicine svezeg goriva i ucestanosti izmena) u prelaznom rezimu. Do ovog podatka moze se doci samo putem normalnog rada reaktora u toku vremena znatno duzeg od vremena u kome se uspostavlja ravnotezno zatrovanje, kao vremena izmedju dva prelivanja D{sub 2}O kondenzata u aktivnu zonu RA. U tom smislu je planirana desetodnevna eksperimentalna kampanja u decembru 1976. U ovom izvestaju izlozeni su oni najznacajniji rezultati sigurnosnih analiza i priprema koji ukazuju na potpunu sigurnost rada reaktora tokom ove eksperimentalne kampanje, sa aspekta postovanja ogranicenja najvaznijih parametara koji uticu na sigurnost reaktora, kao sto su reaktivnost, toplotna i temperaturska ogranicenja za gorivo i za reaktor, itd. Podaci koji budu dobijeni iz ove eksperimentalne kampanje su od znacaja jer ce se na osnovu njih konacno definisati dalji protok svezeg novog goriva, tokom prelaznog rezima (author)

Mass of the 158Sm

International Nuclear Information System (INIS)

Zhao Kui; Guo Jiyu; Lu Xiuqin; Cheng Yehao; Huang Xiaolin; Ma Yong; Li Shuyuan; Ruan Ming; Li Zhichang; Jiang Chenglie

1997-01-01

A preliminary result was reported for the experiment to determine the mass of the heavier neutron-rich nucleus 158 Sm using the 160 Gd( 18 O, 20 Ne) two proton transfer reaction in last progress report. The average Q-value of (4.046 +- 0.102) MeV for the 160 Gd( 18 O, 20 Ne) 158 Sm reaction is given. A mass excess for 158 Sm of (-65.738 +- 0.102) MeV was derived. This is the first experimentally measured value of the mass of 158 Sm which is about 450 keV higher than the evaluation value from systematic trends listed in the 1993 atomic mass table. The new prediction shows better agreement with the measured values and a significant improvement over the earlier FRDM (finite-range droplet model) value

Design procedure for millimeter-wave InP DHBT stacked power amplifiers

DEFF Research Database (Denmark)

Squartecchia, Michele; Johansen, Tom Keinicke; Midili, Virginio

2015-01-01

The stacked-transistor concept for power amplifiers (PA) has been investigated in this work. Specifically, this architecture has been applied in the design of millimeter-wave monolithic microwave integrated circuits (MMICs) using indium phosphide (InP) double heterojunction bipolar transistors...

InP integrated photonics : state of the art and future directions

NARCIS (Netherlands)

Williams, Kevin

2017-01-01

InP integrated circuits enable transceiver technologies with more than 200Gb/s per wavelength and 2Tb/s per fiber. Advances in monolithic integration are poised to reduce energy. remove assembly complexity, and sustain future year-on-year performance increases.

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP.

Science.gov (United States)

Muñoz, P; García-Olcina, R; Habib, C; Chen, L R; Leijtens, X J M; de Vries, T; Robbins, D; Capmany, J

2011-07-04

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in SAC at a speed of 155 Mbps. The device was manufactured in InP using a multiple purpose generic integration scheme. Compared to previous SAC label swapper demonstrations, using discrete component assembly, this label swapper chip operates two order of magnitudes faster.

InP Devices For Millimeter-Wave Monolithic Circuits

Science.gov (United States)

Binari, S. C.; Neidert, R. E.; Dietrich, H. B.

1989-11-01

High efficiency, mm-wave operation has been obtained from lateral transferred-electron devices (TEDs) designed with a high resistivity region located near the cathode contact. At 29.9 GHz, a CW power output of 29.1 mW with a conversion efficiency of 6.7% has been achieved with cavity-tuned discrete devices. This result represents the highest power output and efficiency of a lateral TED in this frequency range. The lateral devices also had a CW power output of 0.4 mW at 98.5 GHz and 0.9 mW at 75.2 GHz. In addition, a monolithic oscillator incorporating the lateral TED has been demonstrated at 79.9 GHz. InP Schottky-barrier diodes have been fabricated using selective MeV ion implantation into semi-insulating InP substrates. Using Si implantation with energies of up to 6.0 MeV, n+ layers as deep as 3 μm with peak carrier concentrations of 2 x 1018 cm-3 have been obtained. These devices have been evaluated as mixers and detectors at 94 GHz and have demonstrated a conversion loss of 7.6 dB and a zero-bias detector sensitivity as high as 400 mV/mW.

Solvothermal synthesis of InP quantum dots and their enhanced luminescent efficiency by post-synthetic treatments.

Science.gov (United States)

Byun, Ho-June; Lee, Ju Chul; Yang, Heesun

2011-03-01

InP quantum dots (QDs) were solvothermally synthesized by using a greener phosphorus source of P(N(CH(3))(2))(3) instead of highly toxic P(TMS)(3) widely used, and subsequently subjected to a size-sorting processing. While as-grown QDs showed an undetectably low emission intensity, post-synthetic treatments such as photo-etching, photo-radiation, and photo-assisted ZnS shell coating gave rise to a substantial increase in emission efficiency due to the effective removal and passivation of surface states. The emission efficiency of the photo-etched QDs was further enhanced by a consecutive UV photo-radiation, attributable to the photo-oxidation at QD surface. Furthermore, a relatively thick ZnS shell on the surface of InP QDs that were surface-modified with hydrophilic ligands beforehand was photochemically generated in an aqueous solution at room temperature. The resulting InP/ZnS core/shell QDs, emitting from blue to red wavelengths, were more efficient than the above photo-treated InP QDs, and their luminescent properties (emission bandwidth and quantum yield) were comparable to those of InP QDs synthesized with P(TMS)(3). Structural, size, and compositional analyses on InP/ZnS QDs were also conducted to elucidate their core/shell structure. Copyright © 2010 Elsevier Inc. All rights reserved.

Electronic properties of pure and p-type doped hexagonal sheets and zigzag nanoribbons of InP

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Alemany, M M G; Gallego, L J

2013-01-01

Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However, by ab initio density functional theory calculations we found that a slightly buckled HInPS is stable both in pristine form and when doped with Zn atoms; the same occurred for hydrogen-passivated zigzag InP nanoribbons (ZInPNRs), quasi-one-dimensional versions of the quasi-two-dimensional material. We investigated the electronic properties of both nanostructures, in the latter case also in the presence of an external transverse electric field, and the results are compared with those of hypothetical planar HInPS and ZInPNRs. The band gaps of planar ZInPNRs were found to be tunable by the choice of strength of this field, and to show an asymmetric behavior under weak electric fields, by which the gap can either be increased or decreased depending on their direction; however, this effect is absent from slightly buckled ZInPNRs. The binding energies of the acceptor impurity states of Zn-doped HInPS and ZInPNRs were found to be similar and much larger than that of Zn-doped bulk InP. These latter findings show that the reduction of the dimensionality of these materials limits the presence of free carriers. (paper)

Preparation and quality control of {sup 153}Sm radiopharmaceuticals

Energy Technology Data Exchange (ETDEWEB)

Swasono, R Tamat; Widyastuti, W; Purwadi, B; Laksmi, I [Radioisotope Production Center - BATAN, Jakarta (Indonesia)

1998-10-01

The paper summarizes the preparation and quality control of {sup 153}Sm-EDTMP and three {sup 153}Sm-radiosynovectomy agents. Natural and enriched Sm{sub 2}O{sub 3} (98.7% {sup 152}Sm) irradiated in RSG-GAS 30 MW reactor yielded pure and high specific activity {sup 153}Sm. Labeling of EDTMP with {sup 153}Sm was carried out by mixing {sup 153}SmCl{sub 3} solution of pH 4.0 to an EDTMP solution at room temperature then pH adjustment to 8. The {sup 153}Sm-EDTMP complex was separated from the free {sup 153}Sm{sup +3} on a Chelex 100 column. Radiochemical purity was determined by thin layer chromatography using Cellulose sheets and pyridine: ethanol: water (1: 2: 4) mixture as solvent. The {sup 153}Sm-EDTMP has been shown to be stable for two weeks. Three particulate preparations of {sup 153}Sm used for the irradiation of chronic synovitis have been studied. They are hydroxyapatite particles, human serum albumin microspheres and ferric hydroxide macroaggregates. The {sup 153}Sm-ferric hydroxide macroaggregates were prepared in a single step by coprecipitation of {sup 153}Sm in the formation of Fe(OH){sub 3}. Preparation of {sup 153}Sm-labelled hydroxyapatite particles and {sup 153}Sm-labelled albumin microspheres were carried out by {sup 153}Sm labelling of previously prepared particles. Radiolabelling efficiency were greater than 95% for hydroxyapatite particles and macroaggregates and was lower than 20% for albumin microspheres. The particle sizes were inspected using an optical microscope with a haemocytometer and micrometric ocular. (author)

Surface passivation of InP solar cells with InAlAs layers

Science.gov (United States)

Jain, Raj K.; Flood, Dennis J.; Landis, Geoffrey A.

1993-01-01

The efficiency of indium phosphide solar cells is limited by high values of surface recombination. The effect of a lattice-matched In(0.52)Al(0.48)As window layer material for InP solar cells, using the numerical code PC-1D is investigated. It was found that the use of InAlAs layer significantly enhances the p(+)n cell efficiency, while no appreciable improvement is seen for n(+)p cells. The conduction band energy discontinuity at the heterojunction helps in improving the surface recombination. An optimally designed InP cell efficiency improves from 15.4 percent to 23 percent AMO for a 10 nm thick InAlAs layer. The efficiency improvement reduces with increase in InAlAs layer thickness, due to light absorption in the window layer.

Transient behavior of interface state continuum at InP insulator-semiconductor interface

International Nuclear Information System (INIS)

Hasegawa, H.; Masuda, H.; He, L.; Luo, J.K.; Sawada, T.; Ohno, H.

1987-01-01

To clarify the drain current drift mechanism in InP MISFETs, an isothermal capacitance transient spectroscopy (ICTS) study of the interface state continuum is made on the anodic Al 2 O 3 /native oxide/ InP MIS system. Capture behavior is temperature-independent, non-exponential and extremely slow, whereas emission behavior is temperature- and bias- dependent, and is much faster. The observed behavior is explained quantitatively by the disorder induced gap state (DIGS) model, where states are distributed both in energy and in space. By comparing the transient behavior of interface states with the observed drift behavior of MISFETs, it is concluded that the electron capture by the DIGS continuum is responsible for the drain current drift of MISFETs. This led to a complete computer simulation of the observed current drift behavior

RA reactor operation and maintenance, Annual report 1974; Pogon i odrzavanje reaktora RA - Izvestaj o radu u 1974. godini

Energy Technology Data Exchange (ETDEWEB)

Milosevic, D et al [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1974-12-15

During 1974, RA reactor was operated at nominal power for 194 days and 13 days at lower power levels. The total production was 30711 MWh which is 2.4% higher than planned. Practically there were no discrepancies from the plan. The reactor was used for irradiation and experiments according to the demand of 437 users. This report contains detailed data about reactor power and experiments performed in 1974. Total number of afety shutdowns was 11, of which 8 were caused by power cuts, and 3 due to human error. Maximum individual personnel exposure dose was 50% of the maximum permissible dose. There were no accidents during this year. Decontamination of surfaces was less than during previous years. About 805 m{sup 2} of surfaces and 178 objects were decontaminated. It was concluded that the successful operation in 1974 has a special significance taking into account the financial problems. [Serbo-Croat] Reaktor RA je u 1974. godini radio na nominalnoj snazi 194 dana i 13 dana na manjim snagama. Ukupni rad iznosio je 30711 MWh odnosno 1,4% vise od planiranog. Prakticno nije bilo odstupanja od plana rada. Reaktor je koriscen za ozracivanja i eksperimente za 437 korisnika. Ovaj izvestaj sadrzi detaljne podatke o radu i eksperimentima koji su obavljani. U toku godine bilo je 11 sigurnosnih zaustavljanja, od cega 8 zbog elektricnog napona i 3 usled greske osoblja. Ukupna doza ozracivanja ljudstva bila je manja nego prethodnih godina. Maksimalna doza po oveku bila je 50% manja od maksimalno dozvoljene doze. Nije bilo ni jednog akcidenta. Dekontaminirano je znatno manje povrsina nego ranijih godina, i sakupljeno manje otpada nego prethodnih godina, dok tecnih efluenata nije bilo. Zakljuceno je da uspesan rad reaktora u 1974. godini ima poseban znacaj kada se imaju na umu problemi finansiranja reaktora.

Purification of cooling water for nuclear reactors using ion exchangers; Preciscavanje vode za hladjenje nuklearnih reaktora pomocu neorganskih jonoizmenjivaca

Energy Technology Data Exchange (ETDEWEB)

Ruvarac, A [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1969-07-01

Zirconiumphosphate, zirconiumoxide and natural magnetite as inorganic substances with favourable adsorption properties were the subject of investigations dealing with problems of water purification for nuclear rector cooling. Study on adsorption of impurities form reactor water to 300 deg C and 100 Atm was done by specially constructed autoclaves. On the other hand, a pre-project covering a laboratory plant for investigation of inorganic ion exchangers under real dynamic conditions is given. In order to obtain necessary data on the basis of which techno-economical analyses regarding utilization of zirconiumphosphate, zirconiumoxide and magnetite for water purification is cooling the reactors types BWR and PWR, could be performed, systematic investigations of physical and chemical properties of these substances were commenced. Equilibrium constants have been determined for adsorption processes at different pH values, as well as under various temperatures. Obtained equilibrium constants were used for calculation of thermodynamic quantities {delta}H, {delta}G and {delta}S (author) [Serbo-Croat] Cirkonijumfosfat, cirkonijumoksid i prirodni magnet, kao neorganski materijali sa pogodnim adsorpcionim osobinama, bili su predmet istrazivanja vezanih za probleme preciscavanja vode za hladjenje nuklearnih reaktora. Izucavanje adsorpcije necistoca iz reaktorske vode do 300 deg C i 100 Atm vrseno je pomocu specijalno konstruisanog autoklava, a za ispitivanje neorganskih jonoizmenjivaca pri realnim dinamickim uslovima dat je idejni projekt jednog laboratorijskog postrojenja. Za dobijanje potrebnih podataka, na osnovu kojih se mogu napraviti tehno-ekonomske analize o koriscenju cirkonijumfosfata, cirkoijumoksida i magnetita za preciscavanje vode za hladjenje reaktora tipa BWR i PWR, zapoceto je sa sistematskim proucavanjima fizickih i hemijskih osobina pomenutih materijala, odredjivane su konstante ravnoteze za procese adsorpcije pri razlicitim pH vrednostima, kao i na razlicitim

Computer control system synthesis for nuclear power plants through simplification and partitioning of the complex system model into a set of simple subsystems

International Nuclear Information System (INIS)

Zobor, E.

1978-12-01

The approach chosen is based on the hierarchical control systems theory, however, the fundamentals of other approaches such as the systems simplification and systems partitioning are briefly summarized for introducing the problems associated with the control of large scale systems. The concept of a hierarchical control system acting in broad variety of operating conditions is developed and some practical extensions to the hierarchical control system approach e.g. subsystems measured and controlled with different rates, control of the partial state vector, coordination for autoregressive models etc. are given. Throughout the work the WWR-SM research reactor of the Institute has been taken as a guiding example and simple methods for the identification of the model parameters from a reactor start-up are discussed. Using the PROHYS digital simulation program elaborated in the course of the present research, detailed simulation studies were carried out for investigating the performance of a control system based on the concept and algorithms developed. In order to give a real application evidence, a short description is finally given about the closed-loop computer control system installed - in the framework of a project supported by the Hungarian State Office for Technical Development - at the WWR-SM research reactor where the results obtained in the present IAEA Research Contract were successfully applied and furnished the expected high performance

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, K; Wang, P; Pan, W W; Wu, X Y; Yue, L; Gong, Q; Wang, S M

2015-01-01

We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III–V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap. (paper)

Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer.

Science.gov (United States)

Black, L E; Cavalli, A; Verheijen, M A; Haverkort, J E M; Bakkers, E P A M; Kessels, W M M

2017-10-11

III/V semiconductor nanostructures have significant potential in device applications, but effective surface passivation is critical due to their large surface-to-volume ratio. For InP such passivation has proven particularly difficult, with substantial depassivation generally observed following dielectric deposition on InP surfaces. We present a novel approach based on passivation with a phosphorus-rich interfacial oxide deposited using a low-temperature process, which is critical to avoid P-desorption. For this purpose we have chosen a PO x layer deposited in a plasma-assisted atomic layer deposition (ALD) system at room temperature. Since PO x is known to be hygroscopic and therefore unstable in atmosphere, we encapsulate this layer with a thin ALD Al 2 O 3 capping layer to form a PO x /Al 2 O 3 stack. This passivation scheme is capable of improving the photoluminescence (PL) efficiency of our state-of-the-art wurtzite (WZ) InP nanowires by a factor of ∼20 at low excitation. If we apply the rate equation analysis advocated by some authors, we derive a PL internal quantum efficiency (IQE) of 75% for our passivated wires at high excitation. Our results indicate that it is more reliable to calculate the IQE as the ratio of the integrated PL intensity at room temperature to that at 10 K. By this means we derive an IQE of 27% for the passivated wires at high excitation (>10 kW cm -2 ), which constitutes an unprecedented level of performance for undoped InP nanowires. This conclusion is supported by time-resolved PL decay lifetimes, which are also shown to be significantly higher than previously reported for similar wires. The passivation scheme displays excellent long-term stability (>7 months) and is additionally shown to substantially improve the thermal stability of InP surfaces (>300 °C), significantly expanding the temperature window for device processing. Such effective surface passivation is a key enabling technology for InP nanowire devices such as

Study of the absorbers and gaps influence on the reactor reactivity, IZ-061-0071-1961; Ispitivanje uticaja apsorbera i supljina na reaktivnost reaktora, IZ-061-0071-1961

Energy Technology Data Exchange (ETDEWEB)

Martinc, R [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1961-12-15

It has been foreseen by the contract to study theoretically and experimentally the influence of the absorbers and gaps on the reactivity of the reactor. Within theoretical study it was planned to develop a method and find the approximation methods for calculations of these effects. Experimental part include development of equipment and performing the experiment at the RB reactor. Since it has not been possible to perform the experiment due to lack of heavy water, only the theoretical part of the task was completed with additional theoretical study of the VISA-1 experimental loop. This report includes the following annexes: influence of absorbers and gaps on the reactivity of the reactor, and calculation of flux depression in the VISA-1 loop. [Serbo-Croat] Ugovor predvidja teorijske i eksperimentalne radove u vezi ispitivanja uticaja apsorbera i praznina na reaktivnost reaktora. Za teorijski deo predvidjena je razrada metode i nalazenje aproksimativnih metoda za proracun ovih efekata. Eksperimentalni deo predvidja pripremu uredjaj i izvodjenje eksperimenata na reaktoru RB. S obzirom na nedostatak teske vode i nemogucnost izvodjenja eksperimenata, zadatak je obavljan samo teorijski a dodata mu je i teorijska obrada petlje VISA-1. Zadatak sadrzi sledece priloge: uticaj apsorbera i supljina na reaktivnost reaktora i proracun depresije fluksa u petlji VISA-1.

Generation of the problem-dependent data libraries for IFIN-HH WWR-S spent fuel storage criticality and dose calculation

International Nuclear Information System (INIS)

Ene, Daniela; Tigau, F.

1998-01-01

The methods used for the radioactivity inventory calculation and dose evaluation of the fuel elements irradiated in the WWR-S IFIN-HH reactor are discussed in this work. A particular attention is paid to the processed problem-dependent nuclear libraries. SAS2H, a complex sequence of the SCALE-4.3 code system containing the modules BONAMI - NITAWL - XSDRNPM - COUPLE - ORIGEN-S - XSDOSE, has been assimilated on the IFIN-HH computer and applied to update the ORIGEN-S libraries by producing problem-dependent processed data libraries needed to perform the depletion and shielding analysis. This sequence uses one of the eight associated data libraries of the SCALE-4.3 system according to the choice of the user. The method consists in the following analysis processes: i) lattice cell neutron analysis to produce the flux weighting spectrum for activation library updating; ii) update of the nuclear data constants of the ORIGEN-S libraries; iii) depletion and decay analysis for a specified fuel assembly and irradiation history in order to generate gamma and neutron source strength and spectra. iv) one-dimensional radial shielding calculation for the evaluation of the angular neutron and gamma flux at the surface of a spent fuel shipping cask and further calculation of the dose rates at various points outside the cask. An efficient alternative of the calculation sequence mentioned above is the ARP (Automatic Rapid Processing) method conceived in order to generate independently ORIGEN-S libraries and to reduce substantially the running time. The substance of this method is the generation of the problem-dependent libraries from basis libraries a priori created by SAS2H for specific fuel assembly type and further interpolation of two independent variables, enrichment and burnup. Specific applications concerning WWR-S spent fuel were performed: i) generation of three problem-dependent libraries for the S-36 fuel assembly taking into account the maximum value of the burnup of this

Orange and reddish-orange light emitting phosphors: Sm{sup 3+} and Sm{sup 3+}/Eu{sup 3+} doped zinc phosphate glasses

Energy Technology Data Exchange (ETDEWEB)

Meza-Rocha, A.N., E-mail: ameza@fis.cinvestav.mx [Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, P.O. Box 55-534, 09340 México D.F., México (Mexico); Speghini, A. [Dipartimento di Biotecnologie, Universita di Verona and INSTM, UdR Verona, Strada Le Grazie 15, I-37314 Verona (Italy); IFAC CNR, Nello Carrara Institute of Applied Physics, MDF Lab, I-50019 Sesto Fiorentino, FI (Italy); Bettinelli, M. [Dipartimento di Biotecnologie, Universita di Verona and INSTM, UdR Verona, Strada Le Grazie 15, I-37314 Verona (Italy); Caldiño, U. [Departamento de Física, Universidad Autónoma Metropolitana-Iztapalapa, P.O. Box 55-534, 09340 México D.F., México (Mexico)

2015-11-15

A spectroscopy study of Sm{sup 3+} and Sm{sup 3+}/Eu{sup 3+} doped zinc phosphate glasses is performed through photoluminescence spectra and decay time profile measurements. Under Sm{sup 3+} excitation at 344 nm, the Sm{sup 3+} singly doped glass shows an orange global emission with x=0.579 and y=0.414 CIE1931 chromaticity coordinates, whereas the Sm{sup 3+}/Eu{sup 3+} co-doped sample exhibits orange overall emissions (x=0.581 and y=0.398, and x=0.595 and y=0.387) and reddish-orange overall emission (x=0.634 and y=0.355) upon excitations at 344, 360 and 393 nm, respectively. Such luminescence from the co-doped sample is originated by the simultaneous emission of Sm{sup 3+} and Eu{sup 3+}. Under Sm{sup 3+} excitation at 344 and 360 nm, the Eu{sup 3+} emission is sensitized and enhanced by Sm{sup 3+} through a non-radiative energy transfer process. The non-radiative nature was inferred from the shortening of the Sm{sup 3+} lifetime observed in the Sm{sup 3+}/Eu{sup 3+} co-doped sample. An analysis of the Sm{sup 3+} emission decay time profiles using the Inokuti–Hirayama model suggests that an electric quadrupole–quadrupole interaction into Sm–Eu clusters might dominate the energy transfer process, with an efficiency of 0.17. - Highlights: • Zinc phosphate glasses are optically activated with Sm{sup 3+}/Eu{sup 3+} (ZPOSmEu). • Non-radiative energy transfer Sm{sup 3+}→Eu{sup 3+} takes place in ZPOSmEu. • ZPOSmEu overall emission can be modulated with the excitation wavelength. • ZPOSmEu might be useful as orange/reddish-orange phosphor for UV-white LEDs.

Safety report for the Independent CO{sub 2} loop for cooling the samples irradiated in the RA reactor vertical experimental channels, Vol. VI; Album VI: Izvestaj o sigurnosti za nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u VEK reaktora RA

Energy Technology Data Exchange (ETDEWEB)

NONE

1964-07-01

First part of the safety report for the Independent CO{sub 2} loop for cooling the samples irradiated in the RA reactor vertical experimental channels contains descriptions of the independent CO{sub 2} loop, system for regulation, measurement and control od the loop parameters, description of the dosimetry system, and the plan for testing the experimental device before start-up. Second part of this analysis describes the influence of of the experimental device on the reactor operation under steady state conditions as follows: influence of the head of the independent coolant loop on the reactivity of the reactor core and influence on the reactor temperature coefficient. Third part of the report includes the analysis of possible accidents during operation of the independent CO{sub 2} coolant loop in the reactor. Izvestaj o sigurnosti za nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u VEK reaktora RA sadrzi u prvom delu: opis nezavisnog kola CO{sub 2}, sistema za regulaciju, merenje i kontrolu parametara nezavisnog kola, sistema dozimetrijske kontrole i plan ispitivanja eksperimentalnih uredjaja pre pustanja u rad. Drugi deo ove analize obuhvata uticaj eksperimentalnog uredjaja na reaktor u normalnom rezimu rada i to: uticaj glave petlje nezavisnog kola CO{sub 2} za hladjenje uzoraka na reaktivnost reaktora i uticaj uredjaja na temperaturni koeficijent reaktora. Treci deo sadrzi analizu mogucih akcidenata u toku rada nezavisnog kola CO{sub 2} u reaktoru.

Probing metastable Sm²⁺ and optically stimulated tunnelling emission in YPO₄: Ce, Sm

DEFF Research Database (Denmark)

Prasad, Amit Kumar; Kook, Myung Ho; Jain, Mayank

2017-01-01

When the model dosimetry system YPO4: Ce3+, Sm3+ is exposed to X-rays, the charge state of the dopants changes, becoming Ce4+ and Sm2+ via hole and electron trapping, respectively which are metastable; the original charge states can be achieved through electron transfer back from Sm2+ to Ce4+ via......) and its temperature dependence to provide insights into thermal quenching, and c) the kinetics of localised recombination from Sm2+ to Ce4+ on nanoseconds to seconds time scales using sub-band-edge excitation....

Luminescence properties of the Sm-doped borate glasses

International Nuclear Information System (INIS)

Kindrat, I.I.; Padlyak, B.V.; Drzewiecki, A.

2015-01-01

The optical absorption and photoluminescence (emission and excitation) spectra as well as decay kinetics of a series of the Sm-doped glasses with Li 2 B 4 O 7 , LiKB 4 O 7 , CaB 4 O 7 , and LiCaBO 3 compositions were investigated and analysed. The Li 2 B 4 O 7 :Sm, LiKB 4 O 7 :Sm, CaB 4 O 7 :Sm, and LiCaBO 3 :Sm glasses of high optical quality have been obtained from the corresponding polycrystalline compounds in the air atmosphere, using a standard glass technology. On the basis of electron paramagnetic resonance (EPR) and optical spectra analysis it was shown that the samarium impurity is incorporated into the glass network as Sm 3+ (4f 5 , 6 H 5/2 ) ions, exclusively. All observed 4f – 4f transitions of the Sm 3+ centres in the optical absorption and luminescence spectra of the investigated glasses are identified. Most intense emission band of the Sm 3+ ions peaked about 598 nm ( 4 G 5/2 → 6 H 7/2 transition) is characterised by a single exponential decay with typical lifetime values, which depend on the basic glass composition as well as concentration and local structure of the Sm 3+ luminescence centres. The quantum efficiency has been evaluated for observed transitions of the Sm 3+ centres using obtained experimental lifetimes and radiative lifetimes calculated by Judd–Ofelt theory. The calculated high quantum efficiencies and measured quantum yields of luminescence show that the investigated borate glasses are perspective luminescence materials. Energy transfer from the Ce 3+ non-controlled impurity and intrinsic luminescence centres to the Sm 3+ centres has been observed. Peculiarities of the Sm 3+ local structure in the network of investigated glasses have been discussed based on the obtained spectroscopic results and structural data. - Highlights: • The Sm-doped Li 2 B 4 O 7 , LiKB 4 O 7 , CaB 4 O 7 , and LiCaBO 3 glasses of high quality were obtained. • EPR, optical absorption and luminescence spectra of Sm 3+ ions in obtained glasses were

Acute toxicity of injection of 153Sm-EDTMP

International Nuclear Information System (INIS)

Chen Baiwei; Chai Xuehong

2004-01-01

Sm-153 has several distinct advantages as a radiopharmaceutical for the treat of patients with bone to skeletal metastasis. Sm-153 shows high skeletal uptake and rapid blood and nonosseous tissue clearance. Several paper have considered the toxicity of 153Sm-EDTMP. We report the acute toxicity in mice and rats after injection of 153Sm-EDTMP or unlabeled EDTMP. The EDTMP was injected to mice by 9.76, 7.8, 6.25, 5, 4 mg/Kg. The logarithmic dose of EDTMP were given to mice to determine LD50. The LD50 of EDTMP in mice is 7.1 mg/Kg. The decay of 153Sm-EDTMP for 4 months were injected to mice at dose of 225 mg/Kg. 153Sm-EDTMP were given at 4 difference dosage to rats by 74 MBq/Kg, 370 MBq/Kg, 1110 MBq/Kg, 1850 MBq/Kg. The LD50 of 153Sm-EDTMP in rats is more than 370 MBq/Kg. Although the cold EDTMP LD50 was low, chelated with Sm can decrease it's toxicity. The decay 153Sm-EDTMP can be safe at dose of 225 mg/Kg. The clinical dose will be used at 37 MBq/Kg. So there is no need to consider to acute toxicity in clinical used 153Sm-EDTMP in designated regimen because the safe range is wide enough to cover clinical used. (authors)

Cross-species prophylactic efficacy of Sm-p80-based vaccine and intracellular localization of Sm-p80/Sm-p80 ortholog proteins during development in Schistosoma mansoni, Schistosoma japonicum, and Schistosoma haematobium.

Science.gov (United States)

Molehin, Adebayo J; Sennoune, Souad R; Zhang, Weidong; Rojo, Juan U; Siddiqui, Arif J; Herrera, Karlie A; Johnson, Laura; Sudduth, Justin; May, Jordan; Siddiqui, Afzal A

2017-11-01

Schistosomiasis remains a major global health problem. Despite large-scale schistosomiasis control efforts, clear limitations such as possible emergence of drug resistance and reinfection rates highlight the need for an effective schistosomiasis vaccine. Schistosoma mansoni large subunit of calpain (Sm-p80)-based vaccine formulations have shown remarkable efficacy in protecting against S. mansoni challenge infections in mice and baboons. In this study, we evaluated the cross-species protective efficacy of Sm-p80 vaccine against S. japonicum and S. haematobium challenge infections in rodent models. We also elucidated the expression of Sm-p80 and Sm-p80 ortholog proteins in different developmental stages of S. mansoni, S. haematobium, and S. japonicum. Immunization with Sm-p80 vaccine reduced worm burden by 46.75% against S. japonicum challenge infection in mice. DNA prime/protein boost (1 + 1 dose administered on a single day) resulted in 26.95% reduction in worm burden in S. haematobium-hamster infection/challenge model. A balanced Th1 (IFN-γ, TNF-α, IL-2, and IL-12) and Th2 (IL-4, IgG1) type of responses were observed following vaccination in both S. japonicum and S. haematobium challenge trials and these are associated with the prophylactic efficacy of Sm-p80 vaccine. Immunohistochemistry demonstrated that Sm-p80/Sm-p80 ortholog proteins are expressed in different life cycle stages of the three major human species of schistosomes studied. The data presented in this study reinforce the potential of Sm-p80-based vaccine for both hepatic/intestinal and urogenital schistosomiasis occurring in different geographical areas of the world. Differential expression of Sm-p80/Sm-p80 protein orthologs in different life cycle makes this vaccine potentially useful in targeting different levels of infection, disease, and transmission.

Antireflection coating on InP for semiconductor detectors

International Nuclear Information System (INIS)

Hantehzadeh, M.R.; Ghoranneviss, M.; Sari, A.H.; Sahlani, F.; Shokuhi, A.; Shariati, M.

2006-01-01

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM

Antireflection coating on InP for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Hantehzadeh, M.R. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)]. E-mail: hanteh@sr.iau.ac.ir; Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sari, A.H. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Sahlani, F. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shokuhi, A. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of); Shariati, M. [Plasma Physics Research Center, Science and Research Campus of Islamic Azad University, Tehran (Iran, Islamic Republic of)

2006-10-25

Aluminum nitride thin film by RF magnetron sputtering is used to produce antireflection coating on InP. The index of refection variation of aluminum nitride for different thickness at different wavelength in the range of 400 to 1500 nm is investigated using reflection spectroscopy. Subsequent Ar+ ion implantation at 30 keV with different doses on these coated layers has been performed. The morphology of aluminum nitride after ion implantation is characterized using atomic force microscopy AFM.

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

Science.gov (United States)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

Computerized reactor power regulation with logarithmic controller

International Nuclear Information System (INIS)

Gossanyi, A.; Vegh, E.

1982-11-01

A computerized reactor control system has been operating at a 5 MW WWR-SM research reactor in the Central Research Institute for Physics, Budapest, for some years. This paper describes the power controller used in the SPC operating mode of the system, which operates in a 5-decade wide power range with +-0.5% accuracy. The structure of the controller easily limits the minimal reactor period and produces a reactor transient with constant period if the power demand changes. (author)

Unique Three-Dimensional InP Nanopore Arrays for Improved Photoelectrochemical Hydrogen Production.

Science.gov (United States)

Li, Qiang; Zheng, Maojun; Ma, Liguo; Zhong, Miao; Zhu, Changqing; Zhang, Bin; Wang, Faze; Song, Jingnan; Ma, Li; Shen, Wenzhong

2016-08-31

Ordered three-dimensional (3D) nanostructure arrays hold promise for high-performance energy harvesting and storage devices. Here, we report the fabrication of InP nanopore arrays (NPs) in unique 3D architectures with excellent light trapping characteristic and large surface areas for use as highly active photoelectrodes in photoelectrochemical (PEC) hydrogen evolution devices. The ordered 3D NPs were scalably synthesized by a facile two-step etching process of (1) anodic etching of InP in neutral 3 M NaCl electrolytes to realize nanoporous structures and (2) wet chemical etching in HCl/H3PO4 (volume ratio of 1:3) solutions for removing the remaining top irregular layer. Importantly, we demonstrated that the use of neutral electrolyte of NaCl instead of other solutions, such as HCl, in anodic etching of InP can significantly passivate the surface states of 3D NPs. As a result, the maximum photoconversion efficiency obtained with ∼15.7 μm thick 3D NPs was 0.95%, which was 7.3 and 1.4 times higher than that of planar and 2D NPs. Electrochemical impedance spectroscopy and photoluminescence analyses further clarified that the improved PEC performance was attributed to the enhanced charge transfer across 3D NPs/electrolyte interfaces, the improved charge separation at 3D NPs/electrolyte junction, and the increased PEC active surface areas with our unique 3D NP arrays.

Minority-carrier lifetime in InP as a function of light bias

Science.gov (United States)

Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Maximum neutron flux at thermal nuclear reactors; Maksimum neutronskog fluksa kod termalnih reaktora

Energy Technology Data Exchange (ETDEWEB)

Strugar, P [Institute of Nuclear Sciences Vinca, Beograd (Serbia and Montenegro)

1968-10-15

Since actual research reactors are technically complicated and expensive facilities it is important to achieve savings by appropriate reactor lattice configurations. There is a number of papers, and practical examples of reactors with central reflector, dealing with spatial distribution of fuel elements which would result in higher neutron flux. Common disadvantage of all the solutions is that the choice of best solution is done starting from the anticipated spatial distributions of fuel elements. The weakness of these approaches is lack of defined optimization criteria. Direct approach is defined as follows: determine the spatial distribution of fuel concentration starting from the condition of maximum neutron flux by fulfilling the thermal constraints. Thus the problem of determining the maximum neutron flux is solving a variational problem which is beyond the possibilities of classical variational calculation. This variational problem has been successfully solved by applying the maximum principle of Pontrjagin. Optimum distribution of fuel concentration was obtained in explicit analytical form. Thus, spatial distribution of the neutron flux and critical dimensions of quite complex reactor system are calculated in a relatively simple way. In addition to the fact that the results are innovative this approach is interesting because of the optimization procedure itself. [Serbo-Croat] Savremeni reaktori za fizicka i tehnoloska istrazivanja predstavljaju tehnicki komplikovanu i skupu masinu. Iz tog razloga su opravdana nastojanja da se podesnim rasporedom goriva u jezgru reaktora dodje do sto ekonomicnijeg rjesenja. U literaturi postoji vise radova, cak i konkretnih realizacija u vidu reaktora sa reflektorom u centru, koji se bave odredjivanjem takve prostorne zavisnosti koncentracije goriva koja pod odredjenim uslovima daje najveci neutronski fluks. Zajednicki nedostatak svih pomenutih rjesenja je u tome sto se polazi od pretpostavljenih prostornih distribucija

Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors

International Nuclear Information System (INIS)

Fu, Dong; Zhu, Xi; Li, Jian; Xu, Yun; Song, Guofeng; Wei, Xin; Liu, Jietao

2015-01-01

High-index dielectric and semiconductor nanoparticles with the characteristics of low absorption loss and strong scattering have attracted more and more attention for improving performance of thin-film photovoltaic devices. In this paper, we focus our attention on InP nanoparticles and study the influence of the substrate and the geometrical configurations on their scattering properties. We demonstrate that, compared with the InP sphere, the InP cylinder has higher coupling efficiency due to the stronger interactions between the optical mode in the nanoparticle and its induced mirror image in the substrate. Moreover, we propose novel thin-film InGaAs photodetectors integrated with the periodically arranged InP nanoparticles on the substrate. Broadband light absorption enhancement is achieved over the wavelength range between 1.0 μm and 1.7 μm. The highest average absorption enhancement of 59.7% is realized for the photodetector with the optimized cylinder InP nanoparticles. These outstanding characteristics attribute to the preferentially forward scattering of single InP nanoparticle along with the effective coupling of incident light into the guided modes through the collective diffraction effect of InP nanoparticles array

Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

Science.gov (United States)

Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

2016-08-24

The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

Study of fuel element characteristic of SM and SMP (SM-PRIMA) fuel assemblies

International Nuclear Information System (INIS)

Klinov, A.V.; Kuprienko, V.A.; Lebedev, V.A.; Makhin, V.M.; Tuchnin, L.M.; Tsykanov, V.A.

1999-01-01

The paper discusses the techniques and results of reactor tests and post-reactor investigations of the SM reactor fuel elements and fuel elements developed in the process of designing the specialized PRIMA test reactor with the SM reactor fuel elements used as a prototype and which are referred to as the SMP fuel elements. The behavior of fuel elements under normal operating conditions and under deviation from normal operating conditions was studied to verify the calculation techniques, to check the calculation results during preparation of the SM reactor safety substantiation report and to estimate the possibility of using such fuel elements in other projects. During tests of fuel rods under deviation from normal operating conditions their advantages were shown over fuel elements, the components of which were produced using the Al-based alloys. (author)

X-ray structure amplitudes for GaAs and InP

International Nuclear Information System (INIS)

Pietsch, U.

1985-01-01

The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

Opinion about difficulties of RA reactor operation under conditions of high activity of the heavy water system - Annex 2; Prilog 2 - Misljenje o teskocama eksploatacije reaktora RA u uslovima visoke aktivnosti teskovodnog sistema

Energy Technology Data Exchange (ETDEWEB)

Nikolic, M [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1963-12-15

It was concluded that reactor the reactor operation is very dangerous for the reactor installation as well as safety of the staff under conditions of heavy water increased activity. Two fundamental arguments in favour of this conclusion are: insufficient possibility of reactor components inspection during maintenance and operation in the future period; difficulties in prevention of accidents that could occur is equally dangerous for the reactor facility and the environment. Cleaning and decontamination of the complete heavy water system is needed before the reactor operation starts in order to avoid possible failures or accidental events. [Serbo-Croat] Zakljuceno je da je eksploatacija reakora u uslovima postojece aktivnosti teskovodnog sistema veoma opasna po sam reaktor i po personal. Dva osnovna razloga u prilog ovog zakljucka su: nedovoljna mogucnost kontrole ispravnosti svih elemenata reaktora u toku remonta i ekspolatacije u predstojecem periodu; teskoca borbe sa udesima, koji bi se eventualno dogodili podjednako je opasna po instalaciju i okolinu. Pre no sto se nastavi sa daljom ekspolatacijom reaktora potrebno ciscenje, dekontaminacija sistema teske vode kako bi se izbegla moguca ostecenja ili akcidentalne situacije.

Luminescence properties of the Sm-doped borate glasses

Energy Technology Data Exchange (ETDEWEB)

Kindrat, I.I. [University of Zielona Góra, Institute of Physics, Division of Spectroscopy of Functional Materials, 4a Szafrana Street, 65-516 Zielona Góra (Poland); Padlyak, B.V., E-mail: B.Padlyak@if.uz.zgora.pl [University of Zielona Góra, Institute of Physics, Division of Spectroscopy of Functional Materials, 4a Szafrana Street, 65-516 Zielona Góra (Poland); Vlokh Institute of Physical Optics, 23 Dragomanov Street, 79-005 Lviv (Ukraine); Drzewiecki, A. [University of Zielona Góra, Institute of Physics, Division of Spectroscopy of Functional Materials, 4a Szafrana Street, 65-516 Zielona Góra (Poland)

2015-10-15

The optical absorption and photoluminescence (emission and excitation) spectra as well as decay kinetics of a series of the Sm-doped glasses with Li{sub 2}B{sub 4}O{sub 7}, LiKB{sub 4}O{sub 7}, CaB{sub 4}O{sub 7}, and LiCaBO{sub 3} compositions were investigated and analysed. The Li{sub 2}B{sub 4}O{sub 7}:Sm, LiKB{sub 4}O{sub 7}:Sm, CaB{sub 4}O{sub 7}:Sm, and LiCaBO{sub 3}:Sm glasses of high optical quality have been obtained from the corresponding polycrystalline compounds in the air atmosphere, using a standard glass technology. On the basis of electron paramagnetic resonance (EPR) and optical spectra analysis it was shown that the samarium impurity is incorporated into the glass network as Sm{sup 3+} (4f{sup 5}, {sup 6}H{sub 5/2}) ions, exclusively. All observed 4f – 4f transitions of the Sm{sup 3+} centres in the optical absorption and luminescence spectra of the investigated glasses are identified. Most intense emission band of the Sm{sup 3+} ions peaked about 598 nm ({sup 4}G{sub 5/2} → {sup 6}H{sub 7/2} transition) is characterised by a single exponential decay with typical lifetime values, which depend on the basic glass composition as well as concentration and local structure of the Sm{sup 3+} luminescence centres. The quantum efficiency has been evaluated for observed transitions of the Sm{sup 3+} centres using obtained experimental lifetimes and radiative lifetimes calculated by Judd–Ofelt theory. The calculated high quantum efficiencies and measured quantum yields of luminescence show that the investigated borate glasses are perspective luminescence materials. Energy transfer from the Ce{sup 3+} non-controlled impurity and intrinsic luminescence centres to the Sm{sup 3+} centres has been observed. Peculiarities of the Sm{sup 3+} local structure in the network of investigated glasses have been discussed based on the obtained spectroscopic results and structural data. - Highlights: • The Sm-doped Li{sub 2}B{sub 4}O{sub 7}, LiKB{sub 4}O{sub 7}, Ca

Switching characteristics of an InP photonic crystal nanocavity: Experiment and theory

DEFF Research Database (Denmark)

Yu, Yi; Palushani, Evarist; Heuck, Mikkel

2013-01-01

The dynamical properties of an InP photonic crystal nanocavity are experimentally investigated using pump-probe techniques and compared to simulations based on coupled-mode theory. Excellent agreement between experimental results and simulations is obtained when employing a rate equation model...

The effect of phosphorus and sulfur treatment on the surface properties of InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Dubey, A.; Lile, D. L.

1988-01-01

Experimental results are presented for InP surfaces treated by using red phosphorus as a source to create an excess overpressure of phosphorus during annealing and prior to silicon dioxide deposition. The surface has been probed by in situ photoluminescence, noncontacting remote gate C-V, and conventional high-frequency and quasi-static C-V methods. A study has also been made of the surface of sulfurized InP following heating in aqueous (NH4)2S(x). MISFETs fabricated using the benefits of these surface treatments show high transconductances and stabilities approaching those of thermal SiO2/Si with less than 5-percent variation in drain current over a 12-hr period.

Formation and characterization of Ni nanostructures in porous InP - from crystallites to wires

International Nuclear Information System (INIS)

Gerngross, M.-D.; Hrkac, V.; Kienle, L.; Carstensen, J.; Foell, H.

2013-01-01

In this work the galvanic formation of Ni crystallites and Ni nanowires with very high aspect ratios (>1000:1) in porous InP is presented. By depositing a dielectric interlayer on the InP pore walls it is possible to produce very high aspect ratio Ni nanowires. The coercivity of these nanowires is about 100 Oe (in-plane) and 240 Oe (out-of-plane), while the coercivity of the crystallites lies in between these values. The in-plane remanence squareness of the Ni nanowires is very low (S ∼ 0.08), out-of-plane it is 0.36. For the Ni crystallites the remanence squareness lies in between the range given for the Ni nanowires. (author)

Synthesis and properties of ultra-long InP nanowires on glass.

Science.gov (United States)

Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

2016-12-16

We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

A positron annihilation study of compensation defects responsible for conduction-type conversions in LEC-grown InP

International Nuclear Information System (INIS)

Shan, Y.Y.; Ling, C.C.; Fung, S.; Beling, C.D.; Zhao, Y.W.

2001-01-01

Positron annihilation techniques have been employed to investigate the formation of vacancy type of compensation defects in undoped LEC-grown InP. N-type InP becomes p-type semiconducting by short time annealing at 700 C, and then turns to be n-type again after further annealing but with a much higher resistivity. Positron lifetime measurements show that the positron average lifetime τ av increases to a high value of 247ps for the first n-type to p-type conversion and decreases to 240ps for the following p-type to n-type conversion. τ av increases slightly and saturates at 242ps upon further annealing. The results of positron annihilation Doppler-broadening measurements are consistent with the positron lifetime measurements. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy type defects and the progressive variation of their concentrations during annealing are critical to the electrical properties of the bulk InP material. (orig.)

Effect of sulphur-doping on the formation of deep centers in n-type InP under irradiation

International Nuclear Information System (INIS)

Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1988-01-01

Effect of sulfur-doping on the efficiency of electron trap formation in InP under irradiation was studied using deep level capacity nonstationary spectroscopy method (DLCNS). Structures with Schottky barrier based on epitaxial InP films with ∼10μm thickness (n 0 =8x10 14 -6x10 17 cm -3 ) were irradiated with 60 Co γ-quanta at 40 deg C; the particle flux intensity made up ∼10 12 cm -2 xs -1 . Experimental results presented allow one to conclude that InP doping with sulfur up to n 0 =6x10 17 cm -3 in contrast to the case of silicon doping does not produce a notable effect on the electron trap formation efficiency under irradiation. The observed reduction of configuration-bistable M-center introduction rate in samples with n 0 >10 16 cm -3 is explained by the change of filling of E c -0.12 eV level belonging to unknown X defect

Kampen om det sibiriske smør

DEFF Research Database (Denmark)

Larsen, Inge Marie

2001-01-01

Afhandlingen følger opbygningen af og udviklingen i den vestsibiriske smørsektor og den internationale handel med sibirisk smør. Hvordan gik det til, at Rusland blev verdens næststørste smøreksportør? Indfaldsvinkelen er lokal sibirisk, national russisk og global, idet danske og engelske firmaers...

Self-Catalyzed Growth and Characterization of In(As)P Nanowires on InP(111)B Using Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Park, Jeung Hun; Pozuelo, Marta; Setiawan, Bunga P D; Chung, Choong-Heui

2016-12-01

We report the growth of vertical -oriented InAs x P1-x (0.11 ≤ x ≤ 0.27) nanowires via metal-organic chemical vapor deposition in the presence of indium droplets as catalysts on InP(111)B substrates at 375 °C. Trimethylindium, tertiarybutylphosphine, and tertiarybutylarsine are used as the precursors, corresponding to P/In and As/In molar ratios of 29 and 0.01, respectively. The as-grown nanowire growth morphologies, crystallinity, composition, and optical characteristics are determined using a combination of scanning and transmission electron microscopies, electron diffraction, and X-ray photoelectron, energy dispersive X-ray, and Raman spectroscopies. We find that the InAs x P1-x nanowires are tapered with narrow tops, wider bases, and In-rich In-As alloy tips, characteristic of vapor-liquid-solid process. The wires exhibit a mixture of zinc blende and wurtzite crystal structures and a high density of structural defects such as stacking faults and twins. Our results suggest that the incorporation of As into InP wires decreases with increasing substrate temperature. The Raman spectra obtained from the In(As)P nanowires reveal a red-shift and lower intensity of longitudinal optical mode relative to both InP nanowires and InP(111)B bulk, due to the incorporation of As into the InP matrix.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

CERN Document Server

Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

International Nuclear Information System (INIS)

Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

2003-01-01

Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

Independent CO{sub 2} loop for cooling the samples irradiated in vertical experimental channels of the RA reactor, Vol. I; Nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u vertikalnim eksperimentalnim kanalima reaktora RA, Album I

Energy Technology Data Exchange (ETDEWEB)

Pavicevic, M; Pavlovic, A [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1963-06-15

Project 'independent CO{sub 2} loop for cooling the samples irradiated in the vertical experimental channels of the RA reactor' is presented in two volumes: volume I - head of the low temperature coolant loop for reactor RA, and volume II - Outer low-temperature reactor coolant loop. Volume I includes: the design specifications for the head of the low-temperature coolant loop, technical description, thermal calculation, calculations of mechanical loads, antireactivity and activation of the components of the coolant loop head, engineering schemes and drawings, cost estimation data. [Serbo-Croat] Projekat 'Nezavisno kolo CO{sub 2} za hladjenje uzoraka ozracivanih u vertikalnim eksperimentalnim kanalima reaktora RA', sastoji se od dva albuma: album I - Glava niskotemperaturno rashladne petlje za reaktor RA, album II - Spoljno kolo niskotemperaturne rashladne petlje za reaktora. Album I sadrzi projektni zadatak glave niskotemperaturne petlje, tehnicki opis, termicki proracun, proracun mehanickih naprezanja, antireaktivnosti i aktivacije kontrukcionih elemenata glave petlje, konstrukcione seme i crteze glave petlje, predracun.

Curie temperature rising by fluorination for Sm2Fe17

Directory of Open Access Journals (Sweden)

Matahiro Komuro

2013-02-01

Full Text Available Fluorine atoms can be introduced to Sm2Fe17 using XeF2 below 423 K. The resulting fluorinated Sm2Fe17 powders have ferromagnetic phases containing Sm2Fe17FY1(0Sm2Fe17FY2 (1Sm2Fe17, and α-Fe. The unit cell for Sm2Fe17 is elongated by the fluorination. The largest unit cell volume among the rhombohedral Sm2Fe17 compounds is 83.8 nm3, which is 5.8% larger than Sm2Fe17. The rhombohedral Sm2Fe17 with the largest unit cell volume is dissociated above 873 K, and fluorination increases Curie temperature from 403 K for Sm2Fe17 to 675 K. This increase can be explained by the magneto-volume effect.

DNA Vaccine Encoding the Chimeric Form of Schistosoma mansoni Sm-TSP2 and Sm29 Confers Partial Protection against Challenge Infection.

Directory of Open Access Journals (Sweden)

Natan Raimundo Gonçalves de Assis

Full Text Available Schistosomiasis is an important parasitic disease worldwide that affects more than 207 million people in 76 countries and causes approximately 250,000 deaths per year. The best long-term strategy to control schistosomiasis is through immunization combined with drug treatment. Due to the ability of DNA vaccines to generate humoral and cellular immune responses, such vaccines are considered a promising approach against schistosomiasis. Sm29 and tetraspanin-2 (Sm-TSP2 are two proteins that are located in the S. mansoni tegument of adult worms and schistosomula and induce high levels of protection through recombinant protein immunization. In this study, we transfected BHK-21 cells with plasmids encoding Sm29, Sm-TSP2 or a chimera containing both genes. Using RT-PCR analysis and western blot, we confirmed that the DNA vaccine constructs were transcribed and translated, respectively, in BHK-21 cells. After immunization of mice, we evaluated the reduction in worm burden. We observed worm burden reductions of 17-22%, 22%, 31-32% and 24-32% in animals immunized with the pUMVC3/Sm29, pUMVC3/SmTSP-2, pUMVC3/Chimera and pUMVC3/Sm29 + pUMVC3/SmTSP-2 plasmids, respectively. We evaluated the humoral response elicited by DNA vaccines, and animals immunized with pUMVC3/Sm29 and pUMVC3/Sm29 + pUMVC3/SmTSP-2 showed higher titers of anti-Sm29 antibodies. The cytokine profile produced by the spleen cells of immunized mice was then evaluated. We observed higher production of Th1 cytokines, such as TNF-α and IFN-γ, in vaccinated mice and no significant production of IL-4 and IL-5. The DNA vaccines tested in this study showed the ability to generate a protective immune response against schistosomiasis, probably through the production of Th1 cytokines. However, future strategies aiming to optimize the protective response induced by a chimeric DNA construct need to be developed.

DNA Vaccine Encoding the Chimeric Form of Schistosoma mansoni Sm-TSP2 and Sm29 Confers Partial Protection against Challenge Infection

Science.gov (United States)

Gonçalves de Assis, Natan Raimundo; Batistoni de Morais, Suellen; Figueiredo, Bárbara Castro Pimentel; Ricci, Natasha Delaqua; de Almeida, Leonardo Augusto; da Silva Pinheiro, Carina; Martins, Vicente de Paulo; Oliveira, Sergio Costa

2015-01-01

Schistosomiasis is an important parasitic disease worldwide that affects more than 207 million people in 76 countries and causes approximately 250,000 deaths per year. The best long-term strategy to control schistosomiasis is through immunization combined with drug treatment. Due to the ability of DNA vaccines to generate humoral and cellular immune responses, such vaccines are considered a promising approach against schistosomiasis. Sm29 and tetraspanin-2 (Sm-TSP2) are two proteins that are located in the S. mansoni tegument of adult worms and schistosomula and induce high levels of protection through recombinant protein immunization. In this study, we transfected BHK-21 cells with plasmids encoding Sm29, Sm-TSP2 or a chimera containing both genes. Using RT-PCR analysis and western blot, we confirmed that the DNA vaccine constructs were transcribed and translated, respectively, in BHK-21 cells. After immunization of mice, we evaluated the reduction in worm burden. We observed worm burden reductions of 17-22%, 22%, 31-32% and 24-32% in animals immunized with the pUMVC3/Sm29, pUMVC3/SmTSP-2, pUMVC3/Chimera and pUMVC3/Sm29 + pUMVC3/SmTSP-2 plasmids, respectively. We evaluated the humoral response elicited by DNA vaccines, and animals immunized with pUMVC3/Sm29 and pUMVC3/Sm29 + pUMVC3/SmTSP-2 showed higher titers of anti-Sm29 antibodies. The cytokine profile produced by the spleen cells of immunized mice was then evaluated. We observed higher production of Th1 cytokines, such as TNF-α and IFN-γ, in vaccinated mice and no significant production of IL-4 and IL-5. The DNA vaccines tested in this study showed the ability to generate a protective immune response against schistosomiasis, probably through the production of Th1 cytokines. However, future strategies aiming to optimize the protective response induced by a chimeric DNA construct need to be developed. PMID:25942636

Unraveling aminophosphine redox mechanisms for glovebox-free InP quantum dot syntheses.

Science.gov (United States)

Laufersky, Geoffry; Bradley, Siobhan; Frécaut, Elian; Lein, Matthias; Nann, Thomas

2018-05-10

The synthesis of colloidal indium phosphide quantum dots (InP QDs) has always been plagued by difficulties arising from limited P3- sources. Being effectively restricted to the highly pyrophoric tris(trimethylsilyl) phosphine (TMS3P) creates complications for the average chemist and presents a significant risk for industrially scaled reactions. The adaptation of tris(dialkylamino) phosphines for these syntheses has garnered attention, as these new phosphines are much safer and can generate nanoparticles with competitive photoluminescence properties to those from (TMS)3P routes. Until now, the reaction mechanics of this precursor were elusive due to many experimental optimizations, such as the inclusion of a high concentration of zinc salts, being atypical of previous InP syntheses. Herein, we utilize density functional theory calculations to outline a logical reaction mechanism. The aminophosphine precursor is found to require activation by a zinc halide before undergoing a disproportionation reaction to self-reduce this P(iii) material to a P(-iii) source. We use this understanding to adapt this precursor for a two-pot nanoparticle synthesis in a noncoordinating solvent outside of glovebox conditions. This allowed us to generate spherical InP/ZnS nanoparticles possessing fluorescence quantum yields >55% and lifetimes as fast as 48 ns, with tunable emission according to varying zinc halide acidity. The development of high quality and efficient InP QDs with this safer aminophosphine in simple Schlenk environments will enable a broader range of researchers to synthesize these nontoxic materials for a variety of high-value applications.

The etching of InP in HCl solutions : a chemical mechanism

NARCIS (Netherlands)

Notten, P.H.L.

1984-01-01

The etch rate of InP in solutions of high HCl concentration was shown to be independent of the applied potential ina wide potential range negative with respect to the flatband value. Dissolution of the solid led to the formation of PH3.The etch rate, which was not mass-transport controlled, was

Electrical and thermal characterization of single and multi-finger InP DHBTs

DEFF Research Database (Denmark)

Midili, Virginio; Nodjiadjim, V.; Johansen, Tom Keinicke

2015-01-01

This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal ch...

Formation of quantum wires and dots on InP(001) by As/P exchange

International Nuclear Information System (INIS)

Yang, Haeyeon; Ballet, P.; Salamo, G. J.

2001-01-01

We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2x4 surface with a length of over 1 μm and flat top 2x4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2x4 to 4x2 and the nanowires transform into dots with a rectangular base and flat top. [copyright] 2001 American Institute of Physics

Wpływ czasu napowietrzania na pracę reaktora SBR i SBBR

Directory of Open Access Journals (Sweden)

Małgorzata Makowska

2016-06-01

Full Text Available W pracy przedstawiono efekty oczyszczania małych ilości ścieków w bioreaktorach porcjowych. Przebadano dwa równolegle pracujące reaktory, z czego jeden był klasycznym systemem SBR, a drugi to reaktor SBBR ze złożem ruchomym. Obydwa ciągi technologiczne oczyszczały taką samą ilość ścieków bytowych wstępnie podczyszczonych w piaskowniku. Trzy kolejne serie badań różniły się długością napowietrzania. Porównano pracę reaktorów w kolejnych seriach oraz analizowano wyniki uzyskane w obu systemach. Największą skuteczność usuwania związków węgla organicznego (jako ChZT i azotu (jako N-NH4 uzyskano w reaktorze SBBR w trzeciej serii badań (średnio odpowiednio 90 i 62%. Reaktor SBBR pracował bardziej stabilnie oraz usuwał na drodze biologicznej fosfor z największą średnią skutecznością 83% w serii trzeciej. Ścieki oczyszczone w tym reaktorze charakteryzowały się mniejszym stężeniem zawiesiny, co świadczy o skuteczniejszej pracy reaktora z wypełnieniem w fazie sedymentacji.

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Science.gov (United States)

Kelrich, A.; Dubrovskii, V. G.; Calahorra, Y.; Cohen, S.; Ritter, D.

2015-02-01

We present experimental results showing how the growth rate, morphology and crystal structure of Au-catalyzed InP nanowires (NWs) fabricated by selective area metal organic molecular beam epitaxy can be tuned by the growth parameters: temperature and phosphine flux. The InP NWs with 20-65 nm diameters are grown at temperatures of 420 and 480 °C with the PH3 flow varying from 1 to 9 sccm. The NW tapering is suppressed at a higher temperature, while pure wurtzite crystal structure is preferred at higher phosphine flows. Therefore, by combining high temperature and high phosphine flux, we are able to fabricate non-tapered and stacking fault-free InP NWs with the quality that other methods rarely achieve. We also develop a model for NW growth and crystal structure which explains fairly well the observed experimental tendencies.

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

The Horizontal Ice Nucleation Chamber (HINC): INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Science.gov (United States)

Lacher, Larissa; Lohmann, Ulrike; Boose, Yvonne; Zipori, Assaf; Herrmann, Erik; Bukowiecki, Nicolas; Steinbacher, Martin; Kanji, Zamin A.

2017-12-01

In this work we describe the Horizontal Ice Nucleation Chamber (HINC) as a new instrument to measure ambient ice-nucleating particle (INP) concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T) and relative humidity (RH) in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw) of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi) of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l. ) to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %), relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 %) to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L-1; normalized to standard T of 273 K and pressure, p, of 1013 hPa) and 4.7 std L-1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC) of 2.2 std L-1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L-1 was measured during an event influenced by marine air, arriving at the JFJ from the North Sea and the Norwegian Sea. The contribution from anthropogenic or other

Characterization of ion-irradiation-induced nanodot structures on InP surfaces by atom probe tomography.

Science.gov (United States)

Gnaser, Hubert; Radny, Tobias

2015-12-01

Surfaces of InP were bombarded by 1.9 keV Ar(+) ions under normal incidence. The total accumulated ion fluence the samples were exposed to was varied from 1 × 10(17) cm(-2) to 3 × 10(18)cm(-2) and ion flux densities f of (0.4-2) × 10(14) cm(-2) s(-1) were used. Nanodot structures were found to evolve on the surface from these ion irradiations, their dimensions however, depend on the specific bombardment conditions. The resulting surface morphology was examined by atomic force microscopy (AFM). As a function of ion fluence, the mean radius, height, and spacing of the dots can be fitted by power-law dependences. In order to determine possible local compositional changes in these nanostructures induced by ion impact, selected samples were prepared for atom probe tomography (APT). The results indicate that by APT the composition of individual InP nanodots evolving under ion bombardment could be examined with atomic spatial resolution. At the InP surface, the values of the In/P concentration ratio are distinctly higher over a distance of ~1 nm and amount to 1.3-1.8. However, several aspects critical for the analyses were identified: (i) because of the small dimensions of these nanostructures a successful tip preparation proved very challenging. (ii) The elemental compositions obtained from APT were found to be influenced pronouncedly by the laser pulse energy; typically, low energies result in the correct stoichiometry whereas high ones lead to an inhomogeneous evaporation from the tips and deviations from the nominal composition. (iii) Depending again on the laser energy, a prolific emission of Pn cluster ions was observed, with n ≤ 11. Copyright © 2015. Published by Elsevier B.V.

Effect of uniaxial stress on free and bismuth-bound excitons in InP

International Nuclear Information System (INIS)

Weber, G.; Ruehle, W.

1979-01-01

The reduction of the shear deformation potentials of holes bound to the isoelectronic impurity Bi in InP is determined by piezoluminescence. It is compared with the corresponding reduction for holes bound to the Coulomb-type acceptors C and Zn. The theory for an effective mass acceptor describes well the cases of C and Zn. However, additional effects as local strain and Stark fields must be involved in the case of Bi leading to an extremely large reduction of the deformation potentials. No change in binding energy with applied stress as well as no exchange splitting of the Bi-bound exciton can be detected within experimental accuracy. The stress dependence of the free exciton reflectance reveals values for the band deformation potentials and a value of 0.07 meV for the exchange splitting of the free exciton in InP. (author)

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Science.gov (United States)

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

Study of discharge in quiescent plasma machine of the INPE

International Nuclear Information System (INIS)

Ferreira, J.G.; Ferreira, J.L.; Ludwig, G.O.; Maciel, H.S.

1988-12-01

Measurements of principal plasma parameters produced by quiescent plasma machine of the Instituto de Pesquisas Espaciais (INPE) for current of 500 mA and several values of pressure and discharge power are presented. A qualitative interpretation for obtained results is done and a simple model for plasma density is compared with experimental values. The conditions of cathode operation are also investigated. (M.C.K.)

Phosphine synthetic route features and postsynthetic treatment of InP quantum dots

International Nuclear Information System (INIS)

Mordvinova, Natalia; Vinokurov, Alexander; Dorofeev, Sergey; Kuznetsova, Tatiana; Znamenkov, Konstantin

2014-01-01

Highlights: • Quantum dots with average diameter of 3–5 nm were synthesized. • PH 3 was used as novel phosphorous precursor. • Electrophoresis was demonstrated to be an effective method of purification of QDs. • Photoeching leads to quantum yields about 20%. • The concentration and time dependencies for photoetching of QDs were obtained. -- Abstract: In this paper we report on the development of synthesis of InP quantum dots with a gaseous phosphine PH 3 as a source of phosphorus and myristic acid and TOP/TOPO as stabilizers. Samples synthesized using myristic acid as stabilizer at relatively low temperatures were found to contain admixture of In(OH) 3 . We studied the influence of HF concentration and duration of illumination on luminescence properties of InP quantum dots during photoetching process. Quantum yields of photoetched samples reached about 20%. Additionally, electrophoresis as a new technique of purification and size-depended separation of synthesized quantum dots was developed

Effect of reactor neutron radiation and temperature on the structure of InP single crystals

International Nuclear Information System (INIS)

Bojko, V.M.; Kolin, N.G.; Merkurisov, D.I.; Bublik, V.T.; Voronova, M.I.; Shcherbachev, K.D.

2006-01-01

The structural characteristics of InP single crystals have been investigated depending on the radiation effects produced by fast and full spectrum neutrons and subsequent heat treatment. A lattice period in InP single crystals decreases under neutron irradiation. Fast neutrons make the main contribution into the change of the lattice period. Availability of the thermal neutrons initiates the formation of Sn atoms, but does not make a significant influence on the change of the lattice period. Heat treatment of the irradiated samples up to 600 deg C causes the annealing of radiation defects and recovery of the lattice period. With increasing neutron fluences a lattice period becomes even higher than before irradiation [ru

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

International Nuclear Information System (INIS)

Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

2006-01-01

Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

Magnetic properties of Sm-based filled skutterudite phosphides

Energy Technology Data Exchange (ETDEWEB)

Giri, R.; Sekine, C.; Shimaya, Y.; Shirotani, I.; Matsuhira, K.; Doi, Y.; Hinatsu, Y.; Yokoyama, M.; Amitsuka, H

2003-05-01

Filled skutterudites SmFe{sub 4}P{sub 12} and SmOs{sub 4}P{sub 12} have been prepared at high temperature and high pressure. The temperature dependence of electrical resistivity in both compounds shows metallic behavior. The magnetic susceptibility and specific heat measurements indicate that SmFe{sub 4}P{sub 12} shows a ferromagnetic ordering at 1.5 K, whereas SmOs{sub 4}P{sub 12} is an antiferromagnet with a T{sub N} of 4.6 K.

Defect formation in n-type InP at elevated temperatures of irradiation

International Nuclear Information System (INIS)

Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

1990-01-01

Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

AES, EELS and TRIM simulation method study of InP(100 subjected to Ar+, He+ and H+ ions bombardment.

Directory of Open Access Journals (Sweden)

Abidri B.

2012-06-01

Full Text Available Auger Electron Spectroscopy (AES and Electron Energy Loss Spectroscopy (EELS have been performed in order to investigate the InP(100 surface subjected to ions bombardment. The InP(100 surface is always contaminated by carbon and oxygen revealed by C-KLL and O-KLL AES spectra recorded just after introduction of the sample in the UHV spectrometer chamber. The usually cleaning process of the surface is the bombardment by argon ions. However, even at low energy of ions beam (300 eV indium clusters and phosphorus vacancies are usually formed on the surface. The aim of our study is to compare the behaviour of the surface when submitted to He+ or H+ ions bombardment. The helium ions accelerated at 500V voltage and for 45 mn allow removing contaminants but induces damaged and no stoichiometric surface. The proton ions were accelerated at low energy of 500 eV to bombard the InP surface at room temperature. The proton ions broke the In-P chemical bonds to induce the formation of In metal islands. Such a chemical reactivity between hydrogen and phosphorus led to form chemical species such as PH and PH3, which desorbed from the surface. The chemical susceptibly and the small size of H+ advantaged their diffusion into bulk. Since the experimental methods alone were not able to give us with accuracy the disturbed depth of the target by these ions. We associate to the AES and EELS spectroscopies, the TRIM (Transport and Range of Ions in Matter simulation method in order to show the mechanism of interaction between Ar+, He+ or H+ ions and InP and determine the disturbed depth of the target by argon, helium or proton ions.

Structural and electronic properties of zigzag InP nanoribbons with Stone–Wales type defects

International Nuclear Information System (INIS)

Longo, R C; Carrete, J; Varela, L M; Gallego, L J

2016-01-01

By means of density-functional-theoretic calculations, we investigate the structural and electronic properties of a hexagonal InP sheet and of hydrogen-passivated zigzag InP nanoribbons (ZInPNRs) with Stone–Wales (SW)-type defects. Our results show that the influence of this kind of defect is not limited to the defected region but it leads to the formation of ripples that extend across the systems, in keeping with the results obtained recently for graphene and silicene sheets. The presence of SW defects in ZInPNRs causes an appreciable broadening of the band gap and transforms the indirect-bandgap perfect ZInPNR into a direct-bandgap semiconductor. An external transverse electric field, regardless of its direction, reduces the gap in both the perfect and defective ZInPNRs. (paper)

Highly doped InP as a low loss plasmonic material for mid-IR region

DEFF Research Database (Denmark)

Panah, Mohammad Esmail Aryaee; Takayama, Osamu; Morozov, S. V.

2016-01-01

by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom......We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found...... interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated...

Arterial injury promotes medial chondrogenesis in Sm22 knockout mice.

Science.gov (United States)

Shen, Jianbin; Yang, Maozhou; Jiang, Hong; Ju, Donghong; Zheng, Jian-Pu; Xu, Zhonghui; Liao, Tang-Dong; Li, Li

2011-04-01

Expression of SM22 (also known as SM22alpha and transgelin), a vascular smooth muscle cells (VSMCs) marker, is down-regulated in arterial diseases involving medial osteochondrogenesis. We investigated the effect of SM22 deficiency in a mouse artery injury model to determine the role of SM22 in arterial chondrogenesis. Sm22 knockout (Sm22(-/-)) mice developed prominent medial chondrogenesis 2 weeks after carotid denudation as evidenced by the enhanced expression of chondrogenic markers including type II collagen, aggrecan, osteopontin, bone morphogenetic protein 2, and SRY-box containing gene 9 (SOX9). This was concomitant with suppression of VSMC key transcription factor myocardin and of VSMC markers such as SM α-actin and myosin heavy chain. The conversion tendency from myogenesis to chondrogenesis was also observed in primary Sm22(-/-) VSMCs and in a VSMC line after Sm22 knockdown: SM22 deficiency altered VSMC morphology with compromised stress fibre formation and increased actin dynamics. Meanwhile, the expression level of Sox9 mRNA was up-regulated while the mRNA levels of myocardin and VSMC markers were down-regulated, indicating a pro-chondrogenic transcriptional switch in SM22-deficient VSMCs. Furthermore, the increased expression of SOX9 was mediated by enhanced reactive oxygen species production and nuclear factor-κB pathway activation. These findings suggest that disruption of SM22 alters the actin cytoskeleton and promotes chondrogenic conversion of VSMCs.

Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2013-01-01

In this paper, the modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. At first, a direct parameter extraction methodology dedicated to III-V based HBTs is employed to determine the small-signal equivalent circuit parameters from...

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Rudolph, Matthias; Jensen, Thomas

2014-01-01

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing...

An InP HBT sub-harmonic mixer for E-band wireless communication

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Krozer, Viktor

2010-01-01

This paper reports on a novel balanced HBT subharmonic mixer (SHM) for E-band wireless communication. An LO spiral type Marchand balun is integrated with the SHM. The SHM has been fabricated in a InP double heterojunction bipolar transistor (DHBT) circuit-oriented technology with fT /fmax = 180GHz...

Assessment of microseeds biodegradability of Sm and Sm:Ba splenic implants in rabbits

International Nuclear Information System (INIS)

Siqueira, Savio Lana; Barroso, Thiago Vinicius Villar; Campos, Tarcisio P.R.

2009-01-01

The radioactive interstitial implants have applications in controlling neoplasm in several regions of the human body. Currently the permanent brachytherapy seeds implanted in the spleen and other organs are made of I-125 seeds. After the total emission of radiation, the metal encapsulated seed remains inert in the implanted area. Seeds of bioactive ceramics have been prepared with Sm-152 incorporation to be activated in Sm-153. This study aimed to develop surgical technique for implanting biodegradable micro-seeds in the spleen of the rabbit. Three micro-seeds were introduced by hypodermic needle in the spleen in eight rabbits by median laparotomy. Subsequently, there were clinical and functional reactions of the animal to the implanted foreign body. The other objective was to perform the animal monitoring by radiography, produced in time sequence, and pathological studies of a fragment of the spleens of rabbits. The results show the effectiveness of surgery, the identification of the implanted material by radiography in vivo, and the biocompatibility of micro-seeds most of Sm and Sm:Ba. These seeds of reduced volume, 0.3x 1.6 mm, could be monitored for radiological studies in 2 periods: early and later implant. On the later studies, radiography was taken at 60d post-implant. Biopsies were taken and radiographs of the samples were also performed for evidencing the degradation state of the seeds. The results of the two groups of four rabbits are presented. They show partial degradation of the seed verified by radiographic contrast which is related to the atomic number of the elements and mass density in the seed. The biopsy showed that the ceramic is clearly absorbed by the spleen tissue and form tissue-implant interface. The histological slides showed an inflammatory reaction with presence of fibrosis of the giant cell foreign body. In conclusion, the radiograph shows a suitable noninvasive technique for monitoring the degradation of micro-seed ceramics in vivo

Assessment of microseeds biodegradability of Sm and Sm:Ba splenic implants in rabbits

Energy Technology Data Exchange (ETDEWEB)

Siqueira, Savio Lana; Barroso, Thiago Vinicius Villar [Faculdade de Ciencias Medicas de Minas Gerais, Belo Horizonte, MG (Brazil). Dept. de Anatomia; Campos, Tarcisio P.R., E-mail: campos@nuclear.ufmg.b [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Programa de Ciencias e Tecnicas Nucleares

2009-07-01

The radioactive interstitial implants have applications in controlling neoplasm in several regions of the human body. Currently the permanent brachytherapy seeds implanted in the spleen and other organs are made of I-125 seeds. After the total emission of radiation, the metal encapsulated seed remains inert in the implanted area. Seeds of bioactive ceramics have been prepared with Sm-152 incorporation to be activated in Sm-153. This study aimed to develop surgical technique for implanting biodegradable micro-seeds in the spleen of the rabbit. Three micro-seeds were introduced by hypodermic needle in the spleen in eight rabbits by median laparotomy. Subsequently, there were clinical and functional reactions of the animal to the implanted foreign body. The other objective was to perform the animal monitoring by radiography, produced in time sequence, and pathological studies of a fragment of the spleens of rabbits. The results show the effectiveness of surgery, the identification of the implanted material by radiography in vivo, and the biocompatibility of micro-seeds most of Sm and Sm:Ba. These seeds of reduced volume, 0.3x 1.6 mm, could be monitored for radiological studies in 2 periods: early and later implant. On the later studies, radiography was taken at 60d post-implant. Biopsies were taken and radiographs of the samples were also performed for evidencing the degradation state of the seeds. The results of the two groups of four rabbits are presented. They show partial degradation of the seed verified by radiographic contrast which is related to the atomic number of the elements and mass density in the seed. The biopsy showed that the ceramic is clearly absorbed by the spleen tissue and form tissue-implant interface. The histological slides showed an inflammatory reaction with presence of fibrosis of the giant cell foreign body. In conclusion, the radiograph shows a suitable noninvasive technique for monitoring the degradation of micro-seed ceramics in vivo

Measurement of third-order nonlinear susceptibility tensor in InP using extended Z-scan technique with elliptical polarization

Science.gov (United States)

Oishi, Masaki; Shinozaki, Tomohisa; Hara, Hikaru; Yamamoto, Kazunuki; Matsusue, Toshio; Bando, Hiroyuki

2018-05-01

The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan technique has been extended with consideration of multiple reflections. The Z-scan results have been fitted very well by the formula and β has been evaluated accurately. The three independent elements of the third-order nonlinear susceptibility tensor in InP have also been determined accurately from the elliptical polarization dependence of β.

Neutron diffraction radiation of solid solution of carbon and hydrogen in the α-titanium in the homogeneity domain

International Nuclear Information System (INIS)

Mirzaev, B.B.; Khidirov, I.; Mukhtarova, N.N.

2005-01-01

In the work by the neutron-graph the homogeneity domain of the introduction solid solution TiC x H y is determined. The sample neutron grams have been taken on the neutron diffractometer (λ=.1085 nm) installed at the thermal column of the WWR-SM reactor (INF AN RUz). For the phase analysis and estimation of solid solutions homogeneity the X-ray graph was used. X-ray grams were taken on the X-ray diffractometer DRON-3M with use of CuK α radiation (λ=0.015418 nm)

The Horizontal Ice Nucleation Chamber (HINC: INP measurements at conditions relevant for mixed-phase clouds at the High Altitude Research Station Jungfraujoch

Directory of Open Access Journals (Sweden)

L. Lacher

2017-12-01

Full Text Available In this work we describe the Horizontal Ice Nucleation Chamber (HINC as a new instrument to measure ambient ice-nucleating particle (INP concentrations for conditions relevant to mixed-phase clouds. Laboratory verification and validation experiments confirm the accuracy of the thermodynamic conditions of temperature (T and relative humidity (RH in HINC with uncertainties in T of ±0.4 K and in RH with respect to water (RHw of ±1.5 %, which translates into an uncertainty in RH with respect to ice (RHi of ±3.0 % at T > 235 K. For further validation of HINC as a field instrument, two measurement campaigns were conducted in winters 2015 and 2016 at the High Altitude Research Station Jungfraujoch (JFJ; Switzerland, 3580 m a. s. l.  to sample ambient INPs. During winters 2015 and 2016 the site encountered free-tropospheric conditions 92 and 79 % of the time, respectively. We measured INP concentrations at 242 K at water-subsaturated conditions (RHw = 94 %, relevant for the formation of ice clouds, and in the water-supersaturated regime (RHw = 104 % to represent ice formation occurring under mixed-phase cloud conditions. In winters 2015 and 2016 the median INP concentrations at RHw = 94 % was below the minimum detectable concentration. At RHw = 104 %, INP concentrations were an order of magnitude higher, with median concentrations in winter 2015 of 2.8 per standard liter (std L−1; normalized to standard T of 273 K and pressure, p, of 1013 hPa and 4.7 std L−1 in winter 2016. The measurements are in agreement with previous winter measurements obtained with the Portable Ice Nucleation Chamber (PINC of 2.2 std L−1 at the same location. During winter 2015, two events caused the INP concentrations at RHw = 104 % to significantly increase above the campaign average. First, an increase to 72.1 std L−1 was measured during an event influenced by marine air, arriving at the JFJ

Changes in structure of the short-range order of the InP melt when heated

International Nuclear Information System (INIS)

Glazov, V.M.; Dovletov, K.; Nashel'skij, A.Ya.; Mamedov, M.M.

1977-01-01

An investigation of the temperature dependence of the InP viscosity has indicated an ''after-melting'' effect similar to that observed in other A 3 V 5 compounds having a sphalerite structure. The termodynamic parameters of the viscous flow of indium phosphide melt have been calculated, and a suggestion has been made on the loosening of the short-range order structure of the melt during the period preceding solidification. With the similarity in the behaviour of InP and of A 3 Sb compound melts as a basis, a suggestion has been put forward that the influence of the thermal dissociation upon the character of the changes in the short-range order structure directly after transition from the solid to the liquid phase is negligible

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

New connecting elements for cascade photoelectric converters based on InP

Science.gov (United States)

Marichev, A. E.; Pushnyi, B. V.; Levin, R. V.; Lebedeva, N. M.; Prasolov, N. D.; Kontrosh, E. V.

2018-03-01

In this paper, we report on the initial studies of connecting elements for cascade photodetectors. The heterostructures used in this work are based on InP. As a connecting element, it is proposed to use nanocrystalline inclusions instead of the tunnel junction. GaP nanocrystals are most suitable for this purpose because this material does not cause absorption of the incident radiation.

Some aspects related to radioprotection during decommissioning of the WWR-S research reactor

International Nuclear Information System (INIS)

Pantazi, Doina; Stan, Camelia

2007-01-01

Radiological safety management ensures protection of personnel, public and environment. During decommissioning of a WWR-S type research reactor, besides other specific industrial problems, radiation and/or contamination sources will be produced and their effects have to be kept under control. In any decommissioning operation that implies working in a radioactive environment, the main concern being the minimization of the total dose received by the workers. To minimize the possible dose that an individual could receive, prior entering the working area, a definite set of stages of a radiation protection plan, developed according to ALARA principle, should be implemented. Of major interest is estimation the effective dose which operators will receive during a year, considering all operations in that he is involved and all the different possible paths of irradiation or contamination (inhalation, skin penetration, injury, etc.). The estimation of doses received by operating personnel will take into consideration the following steps: - the determination of jobs and events which could involve a significant radiation dose exposure; - whole body and extremities exposure doses should be assessed taking into consideration that the likelihood of contact with radiation and/or contamination sources is higher for hands and legs; - all possible paths of exposure will be identified (external irradiation is the most expected while the internal exposure due to intake could happen following an accidental inhalation of radionuclides or an injury in contaminated medium); - technological controls and administrative measures for exposure minimization will be rigorously implemented; - estimated doses will be compared with maximum permissible levels. The paper describes some general methodologies for computing the total effective doses received by workers involved in decommissioning operations, as well as their application for few special situations, that could contribute significantly to

Degeneracy lifting due to thermal fluctuations around the frustration point between anticlinic antiferroelectric SmC(A)* and synclinic ferroelectric SmC*.

Science.gov (United States)

Sandhya, K L; Chandani, A D L; Fukuda, Atsuo; Vij, Jagdish K; Emelyanenko, A V; Ishikawa, Ken

2013-01-01

In the binary mixture phase diagram of MC881 and MC452, the borderline between anticlinic antiferroelectric SmC(A)(*) and synclinic ferroelectric SmC(*) becomes apparently parallel to the temperature ordinate axis at the critical concentration r(c). The free energy difference between SmC(A)(*) and SmC^{*} is extremely small in a wide temperature range near r(c). In such circumstances, by observing Bragg reflection spectra due to the director helical structure and electric-field-induced birefringence, we have observed the continuous change from SmC(A)(*) to SmC(*) for r/~r(c). These intriguing phenomena have been explained, successfully at least in the high-temperature region, by a thermal equilibrium between the synclinic and anticlinic orderings and the resulting Boltzmann distribution for the ratio between them; the thermal equilibrium is considered to be attained in a nonuniform defect-assisted way through solitary waves moving around dynamically. We have also discussed qualitatively an important role played by the effective long-range interlayer interactions in the low-temperature region.

Synthesis and bio-evaluation of nano-hydroxyapatite trapped by 153Sm

International Nuclear Information System (INIS)

Bing Wenzeng; Luo Shunzhong; Wen Guanghua; Jiang Shubin; Xiong Xiaoling; Liu Guoping

2006-03-01

After nanoHA was synthesized, 153 Sm-EDTMP-nanoHA and 153 Sm-citrate-nanoHA were prepared and proved stable in vitro. ECT images of New Zealand rabbits injected with 153 Sm-EDTMP-nanoHA had better contrast, skeletal figure visible, liver and spleen clear. The images of 153 Sm-citrate-nanoHA showed a similar results but kidney invisible, which meant 153 Sm-citrate-nanoHA showed a similar results but kidney invisible, which meant 153 Sm-citrate-nanoHA was mainly excreted through liver and gall. 153 Sm-EDTMP-nanoHA's half effective inhibition concentrations to SMMC-7721 and MCF-7 cells were 1.98 g/L and 0.075 g/L respectively and 153 Sm-citrate-nanoHA's were 1.89 g/L and 0.094 g/L proportionally. 153 Sm-EDTMP-nanoHA and 153 Sm-citrate-nanoHA were worthy of a further research because their half effective inhibition concentrations were much lower than ones of the single nanoHA. (authors)

checkCIF/PLATON report Datablock: Sm

Indian Academy of Sciences (India)

Moiety formula C59 H45 N2 O6 Sm. Sm (C14 H12 N2) ... 4.0 Ratio. PLAT234_ALERT_4_C Large Hirshfeld Difference O4 -- C24 .. 0.16 Ang. ... outliers and unusual parameters, but every test has its limitations and alerts that are not important.

Nanocrystallization in Cu-Zr-Al-Sm Bulk Metallic Glasses

Science.gov (United States)

Sikan, Fatih; Yasar, Bengisu; Kalay, Ilkay

2018-04-01

The effect of rare-earth element (Sm) microalloying on the thermal stability and crystallization kinetics of melt-spun ribbons and suction-cast rods of Zr48Cu38.4Al9.6Sm4 alloy were investigated using differential scanning calorimetry (DSC), X-ray diffraction (XRD), transmission electron microscopy (TEM), and atom probe tomography (APT). The XRD results of constant heating rate annealing indicated that amorphous Zr48Cu38.4Al9.6Sm4 melt-spun ribbons devitrifies into Cu2Sm at 673 K (400 °C). The sequence continues with the precipitation of Cu10Zr7 and then these two phases coexist. XRD and TEM studies on 1 mm diameter as suction-cast rods indicated the precipitation of 30-nm-mean size Cu2Sm crystals during solidification. TEM investigation of the isothermal crystallization sequence of melt-spun ribbons and 1-mm-diameter suction-cast rods revealed the precipitation of Cu2Sm nanocrystals at the onset of crystallization and the restriction of the growth of these nanocrystals up to 10 nm diameter with further annealing. APT analysis of 1-mm-diameter suction-cast rods showed that the limited growth of Cu2Sm nanocrystals is due to sluggish diffusion of Sm and Al-Zr pile up at the interface.

Velocity auto-correlation and hot-electron diffusion constant in GaAs and InP

International Nuclear Information System (INIS)

Deb Roy, M.

1982-01-01

Auto-correlation functions of the fluctuations in the electron velocities transverse and parallel to the applied electric field are calculated by the Monte Carlo method for GaAs and InP at three different values of field strength which are around three times the threshold field for negative differential mobility in each case. From these the frequency-dependent diffusion coefficients transverse and parallel to the applied field and the figure of merit for noise performance when used in a microwave amplifying device are determined. The results indicate that the transverse auto-correlation function Csub(t)(s) falls nearly exponentially to zero with increasing interval s while the parallel function Csub(p)(s) falls sharply, attains a minimum and then rises towards zero. In each case a higher field gives a higher rate of fall and makes the correlation functions zero within a shorter interval. The transverses diffusion coefficient falls monotonically with the frequency but the parallel diffusion coefficient generally starts with a low value at low frequencies, rises to a maximum and then falls. InP, with a larger separation between the central and the satellite valleys, has a higher value of the low frequency transverse diffusion coefficient and a lower value of its parallel counterpart. The noise performance of microwave semiconductor amplifying devices depends mainly on the low frequency parallel diffusion constant and consequently devices made out of materials like InP with a large separation between valleys are likely to have better noise characteristics. (orig.)

Molecular beam epitaxial growth and characterization of zinc-blende ZnMgSe on InP (001)

International Nuclear Information System (INIS)

Sohel, Mohammad; Munoz, Martin; Tamargo, Maria C.

2004-01-01

High crystalline quality zinc-blende structure Zn (1-x) Mg x Se epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn (1-x) Mg x Se closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn (1-x) Cd x Se with Zn (1-x) Mg x Se as the barrier layer were grown which exhibit near ultraviolet emission

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

International Nuclear Information System (INIS)

Joyce, Hannah J; Docherty, Callum J; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B; Gao Qiang; Tan, H Hoe; Jagadish, Chennupati

2013-01-01

We have performed a comparative study of ultrafast charge carrier dynamics in a range of III–V nanowires using optical pump–terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm 2 V −1 s −1 , which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s −1 . This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 × 10 5   cm s −1 . These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices. (paper)

INP studies for a Tau-Charm Factory

International Nuclear Information System (INIS)

Skrinsky, A.

1994-01-01

This paper presents the results of studies undertaken at INP of options for a Tau Charm Factory. Three different beam options have been studied. First is a 'round beam option', allowing axially symmetric beams which yield high tau-pair productivity. The second option involves monochromatic beams, which enhances productivity for narrow c bar c states, gives good tau pair productions in a clean manner, and has a good resonant-to-nonresonant ratio. The third option allows longitudinal polarization, should it prove to be interesting. It is an easy option to implement because it only involves polarized electrons. Work on some of these options is described in terms of experiments on the VEPP-2 device

InP based lasers and optical amplifiers with wire-/dot-like active regions

DEFF Research Database (Denmark)

Reithmaier, J. P.; Somers, A.; Deubert, S.

2005-01-01

Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be ...

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

Science.gov (United States)

Ngo, Catherine

2001-01-01

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ab initio electronic band structure calculation of InP in the wurtzite phase

Science.gov (United States)

Dacal, Luis C. O.; Cantarero, Andrés

2011-05-01

We present ab initio calculations of the InP band structure in the wurtzite phase and compare it with that of the zincblende phase. In both calculations, we use the full potential linearized augmented plane wave method as implemented in the WIEN2k code and the modified Becke-Johnson exchange potential, which provides an improved value of the bandgap. The structural optimization of the wurtizte InP gives a=0.4150 nm, c=0.6912 nm, and an internal parameter u=0.371, showing the existence of a spontaneous polarization along the growth axis. As compared to the ideal wurtzite structure (that with the lattice parameter derived from the zincblende structure calculations), the actual wurtzite structure is compressed (-1.3%) in plane and expanded (0.7%) along the c-direction. The value of the calculated band gaps agrees well with recent optical experiments. The calculations are also consistent with the optical transitions found using polarized light.

Gamma ray irradiation characteristics of SM fibers

International Nuclear Information System (INIS)

Ito, Ryuichi; Okano, Hiroaki; Hashiba, Keichi; Nakai, Hisanori

1987-01-01

1.3 μm range single mode (SM) optical fibers have been used for wide application of mainly long distance communication. At present, in order to realize the larger capacity and longer distance between relay points, the development of 1.5 μm range SM fibers of low dispersion and small loss has been actively promoted. As for the radiation withstanding property of SM fibers, report is scarce. The authors reported on the gamma ray irradiation characteristics of 1.3 μm range SM fibers, but since 1.5 μm range SM fibers are designed with the different structure from that of 1.3 μm fibers, it is necessary to evaluate from new viewpoint. In this report, mainly on the structure having triangular distribution, the effect that the manufacturing condition and the structural defects of glass exert on the gamma ray irradiation characteristics is described. The specimens were mainly dispersion shift type fibers (DSF), and for comparison, single window, double window and 1.3 μm SM fibers were examined. Co-60 gamma ray was irradiated, and the optical loss and electron spin resonance were measured. By low temperature and low speed drawing, the good result in the optical loss was obtained. The presence of oxygen at the time of sintering materials had no effect. The dependence of the ESR on the drawing condition was not very remarkable. (Kako, I.)

Radiation protection at the RA Reactor in 1989, Part -2, Decontamination, collection of treatment of fluid and solid radioactive waste, Annex 3; Deo 2 - Zastita od zracenja kod reaktora RA u 1989. godini, Dekontaminacija i intervencija, sakupljanje i obrada tecnih i cvrstih radioaktivnih otpadnih materija za potrebe reaktora RA - Prilog 3

Energy Technology Data Exchange (ETDEWEB)

Mandic, M; Vukovic, Z; Plecas, I; Knezevic, Lj; Lazic, S; Bacic, S [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1989-12-15

Certain amount of solid waste results from RA reactor operation, the mean quantity of which depends on the duration of reactor operation and related activities. During repair, when reactor is not operated as well under accidental conditions, the quantity of waste is higher, dependent on the type of repair and comprehensiveness of decontamination of the working surface, contaminated tools and components. The waste is sorted and packed on the spot where they appeared according to the existing regulations and principles of radiation protection with aim to minimize unnecessary exposure of the radiation protection personnel who deals with control, transport, radioactive waste treatment and decontamination. During exceptional operations (decontamination, repair, bigger volume of contaminated material, etc.) professional staff of the Radiation protection department gives recommendations and helps in planning the actions related to repair, sorting and packaging of radioactive waste in special containers, identification of the contaminants, etc. [Serbo-Croat] Tokom rada reaktora RA dolazi do stvaranja odredjenih cvrstih otpadnih materijala cija prosecna kolicina zavisi od vremena rada reaktora i aktivnosti koje se tamo obavljaju. Tokom remonta, kada reaktor ne radi kao i pri akcidentalnim situacijama nastaju vece kolicine otpadnih materijala koje zavise od obima i vrste remontnih operacija i obima dekontaminacije kontaminirane radne povrsine i kontaminiranog alata, predmeta, opreme, itd. Nastali otpadni materijali se razvrstavaju i pakuju na mestu nastanka prema odgovarajucim propisima u skladu sa principima zastite od zracenja i aspekta bezbednosti u cilju minimiziranja nepotrebnog ozracivanja ljudstva za preuzimanje, kontrolu, transport, naknadnu obradu RAO i dekontaminaciju. Pri nerutinskim operacijama (dekontaminacija, remont, kontaminiarni otpadni materijal velike zapremine i sl.), strucna sluzba Institita ZASTITA pruza strucne konsultacije i pomaze pri planiranju

EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Weimann, Nils; Doerner, Ralf

2017-01-01

In this paper an electromagnetic (EM) simulation assisted parameters extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrate...

Raman spectroscopy for characterization of annealing of ion-implanted InP

International Nuclear Information System (INIS)

Myers, D.R.; Gourley, P.L.; Vaidyanathan, K.V.; Dunlap, H.L.

1983-01-01

Raman spectroscopy has been used as a noncontacting, nondestructive tool to evaluate the properties of Si + - and Be + implanted InP samples annealed at temperatures ranging from 600 to 750C using phospho-silicate glass (PSG) as the encapsulant. Carrier activation, carrier mobility and recovery of damage as a function of anneal temperature obtained from analysis of Raman data agree very well with independent electrical measurements. (author)

Electronic band structure calculations for GaxIn1−xASyP1−y alloys lattice matched to InP

International Nuclear Information System (INIS)

Bechiri, A; Benmakhlouf, F; Allouache, H; Bacha, S; Bouarissa, N

2012-01-01

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga x In 1−x As y P 1−y quarternary alloys lattice matched to InP. The effects of compositional variations are properly included in the calculations. Very good agreement is obtained between the calculated values and the available experimental data for the lattice–matched alloy to InP. The absorption at the fundamental optical gaps is found to be direct within a whole range of the y composition whatever the lattice-matching to the substrate of interest. The alloy system Ga x In 1−x As y P 1−y lattice matched to InP is suggested to be suitable for an efficient light emitting device (ELED) material.

Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

International Nuclear Information System (INIS)

Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

2007-01-01

This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

Studies concerning the preparation of the 153Sm complex with EDTMP (ethylenediaminetetra methylenephosphonic acid) and other 153Sm complexes with other phosphonates, at room temperature

International Nuclear Information System (INIS)

Gasiglia, Haroldo Taurian

2000-01-01

This work presents a study on the preparation of the complexes 1 53S m - EDTMP, 153 Sm - HEDP, 153 Sm - NTMP, 153 Sm - DTPMP and 153 Sm - HDTMP at room temperature. The preparation of the complex 153 Sm - HDTMP, under heating (70 - 72 deg C), was also studied. Several factors affecting the 153 Sm - EDTMP complexing yields were studied, due to its importance for use in Nuclear Medicine. These factors were: the molar ratio [ligand] / [metal], the ligand concentration and the incubation time of the mixture ligand-metal. The preparation of this complex, in low molar ratios, was also investigated. A study of the 153 Sm - EDTMP concerning the 'in vitro' stability, when this complex was prepared in low radioactive concentrations was performed. A study on the temperature influence on its degradation, when this complex was obtained in higher radioactive concentrations, was also performed. The preparation of the complexes 153 Sm - HEDP, 153 Sm - NTMP, 153 Sm - DTPMP and 153 Sm - HDTMP was investigated by preparing the complexes in two situations: high molar ratio and ligand concentration and low molar ratio and ligand concentration. The 'in vitro' stability of each complex, obtained in low radioactive concentration was studied. In the specific case of the complex 153 Sm - HDTMP, its biological distribution in mice was performed. All the complexes were investigated by high performance liquid chromatography (HPLC) and its complexing yields were determined by other three chromatographic processes: ionic exchange, thin layer chromatography (TLC - SG) and paper chromatography. The chromatographic processes were performed by association with specific radiochemical techniques. This work also presents a comparative study on the chromatograms obtained by thin layer chromatography (TLC - SG) and paper chromatography, when evaluated by the technique of cutting the strips into pieces and the chromatograms performed directly on a radiochromatography. The shape of the chromatograms and R

RA Research nuclear reactor, Part I - RA nuclear reactor operation, maintenance and utilization in 1983; Istrazivacki nuklearni reaktor RA - Deo I - Pogon, odrzavanje i eksploatacija nuklearnog reaktora RA u 1983. godini

Energy Technology Data Exchange (ETDEWEB)

Sotic, O; Martinc, R; Kozomara-Maic, S; Cupac, S; Raickovic, N; Radivojevic, J; Badrljica, R; Majstorovic, D; Sanovic, V [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1983-12-15

After regular shutdown in November 1982, inspection of the fuel elements from the RA reactor core which was done from December 1982 - February 1983 has shown that there are deposits of aluminium oxides on the surface of the fuel cladding. After restart The RA reactor was operated at power levels from 1.8 - 2 MW, with 80% enriched uranium dioxide fuel elements. It was found that there was no corrosion of the fuel element cladding and that it was not possible to find the cause of surface deposition on the cladding surfaces without further operation. It was decided to purify the heavy water permanently during operation and to increase the heavy water flow by operating two pumps. This procedure was adopted in order to decrease the possibility of corrosion. The Safety committee of the Institute has approved this procedure for operating the RA reactor in 1983. The core was made of 80% enriched fuel, critical experiments were done until June 1983, and after that the operation was continued at power levels up to 2 MW. [Serbo-Croat] Pregledom nuklearnog goriva iz tehnoloskih kanala reaktora RA koji je izvrsen u periodu decembear 1982-feburuar 1983. godine nakon zaustavljanja reaktora po isteku novembarske kampanje 1982. godine, ustanovljeno je da ponovo dolazi do stvaranja taloga u obliku hidratisanih oksida aluminiuma na kosuljicama gorivnih elemenata. Nakon ponovnog pustanja u rad, reaktor je do novembra 1981. godine neprekidno bio u pogonu na snagama 1,8 - 2 MW. Jezgro je bilo formirano iskljucivo sa od gorivnih elemenata sa 80% obogacenim uran dioksidom. Utvrdjeno je da kosuljica gorivnog elementa nije korodirala, i da se bez nastval rada ne moze utvrditi uzrok pojave taloga na povrsini kosuljice. Da bi se mogucnost korozije aluminjumskih komponenti u primarnom kolu raktora svela na sto manju meru odluceno je da se vrsi neprekidno preciscavanje teske vode i da se istovremeno poveca protok teske vode radom dve pumpe, Komitet za sigurnost Instituta odobrio je ovakav nacin

Calculational investigations and analysis of characteristics of research reactor WWR-M as a source of neutrons for solution of scientific and applied tasks

International Nuclear Information System (INIS)

Vorona, P.M.; Razbudej, V.F.

2010-01-01

Calculational studies and analysis of the neutron fields of WWR-M research reactor of the Institute for Nuclear Research, National Academy of Sciences of Ukraine, as a basic nuclear facility for performing the fundamental and applied investigations and for experimentalindustrial production of radioisotope products for various spheres of application are carried out. The calculations are carried out by the method of statistic tests (Monte Carlo) applying the computer program MCNP-4C. The data on the spectra and the neutron flux density values at the 10 MW reactor power for all technological facilities designed for the works with neutrons: 19 vertical experimental channels for irradiation of specimens and 10 horizontal channels for beams extraction from the reactor are obtained. The effect of the neutron traps (water cavities) mounted in the core on the characteristics of the extracted from the reactor beams is demonstrated. Recommendations associated with optimization of the reactor core are adduced for amplification of its capabilities as a neutron source in experimental researches.

The training of the staff for work with radioactive materials and work on nuclear reactor in the Institute; Obuka kadrova za rukovanje radioizotopima i pogon nuklearnih reaktora u Institutu 'Boris Kidric' - Vinca

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M; Mladjenovic, O; Sotic, O [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Yugoslavia)

1978-05-15

A short informational review of the activities in the 'Boris Kidric' Institute on the training courses for the use of radioactive materials and for operating nuclear reactors including power reactors. The survey of the courses is given in the enclosures. (author) Kratak informativni pregled delatnosti u IBK na kursevima za obuku kadrova u rukovanju readioaktivnim materijalima i pogonu nuklearnih reaktora, ukljucujuci reaktore snage. pregled kurseva i materijala za njih dati su u prilozima. (author)

Hopping conductivity via deep impurity states in InP

International Nuclear Information System (INIS)

Kuznetsov, V.P.; Messerer, M.A.; Omel'yanovskij, Eh.M.

1984-01-01

Hopping (epsilon 3 ) and Mott conductivities via deep impurity compounds with localization radius below 10 A have been studied using as an example Mn in InP. It is shown, that the existing theory of hopping conductivity in low-alloyed semiconductors with Na 3 << 1 can be Used for the case of deep centres as successfully as for the case of insignificant hydrogen-like impurities. Fundamental parameters of the theory: localization radius of wave function of deep impurities, state density near the Fermi level, mean hop length, are determined

Structural and Magnetic Properties of Sm Implanted GaN

International Nuclear Information System (INIS)

Li-Juan, Jiang; Xiao-Liang, Wang; Hong-Ling, Xiao; Zhan-Guo, Wang; Chun, Feng; Ming-Lan, Zhang; Jian, Tang

2009-01-01

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering temperature above room temperature in all the implanted samples, while the effective magnetic moment per Sm obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94(2005)037205, Phys. Rev. B 72(2005)245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

Emission properties of Sm(III) complex having ten-coordination structure

International Nuclear Information System (INIS)

Hasegawa, Yasuchika; Tsuruoka, Shin-ichi; Yoshida, Takahiko; Kawai, Hideki; Kawai, Tsuyoshi

2008-01-01

Sammarium(III) complex having ten-coordination structure, bis-(1,10-phenanthroline)tris-(hexafluoroacetylacetonato)samarium(III) (Sm(hfa) 3 (phen) 2 ) was prepared by chelation of tris-(hexafluoroacetylacetonato) samarium(III) (Sm(hfa) 3 (H 2 O) 2 ) with 1,10-phenantroline (phen). The characteristic ten-coordination structure of Sm(hfa) 3 (phen) 2 was determined by 1 H NMR and elemental analyses. Strong deep-red emission (λ max =643 nm) and narrow emission band (FWHM=5 nm) of Sm(hfa) 3 (phen) 2 originated from electronic allowed transition from characteristics ten coordinate structure. The emission quantum yields Sm(hfa) 3 (phen) 2 excited at absorption bands of ligands and Sm(III) ion were found to be 0.36 and 1.4%, respectively

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

Phase formation and crystallization behavior of melt spun Sm-Fe-based alloys

International Nuclear Information System (INIS)

Shield, J.E.

1999-01-01

The phase formation and microstructures of Sm-Fe alloys have been investigated at Sm levels of 11 and 17 atomic percent and with alloying additions of Ti and C. At lower Sm content, virtually phase pure SmFe 7 formed, while higher Sm content resulted in the formation of SmFe 7 , SmFe 2 and amorphous phases. The addition of Ti and C resulted in greater stability and a larger volume fraction of the amorphous phase. The binary Sm-Fe alloys at both Sm levels had tremendously variable microstructures, with large discrepancies in grain size and phase distribution from region to region. The addition of Ti and C tended to result in a more homogeneous microstructure, as well as a refinement in the microstructural scale. (orig.)

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

In vivo and in vitro binding assay of 153Sm-EDTMP

International Nuclear Information System (INIS)

Chen Daming; Wang Yuqing; Jin Xiaohai; Fan Hongqiang; Bai Hongsheng; Jia Bin; Zhang Jingming

1999-01-01

With the waters ultra hydrogel TM 120 μm hplc column (7.7 mm x 300 mm), several experiments have been finished, including the in vitro binding assay of 153 Sm-EDTMP, 153 SmCl 3 with the Cys, BSA, mouse plasma; HPLC analysis of the urine and the extracting solution of liver homogenate after having injected the 153 Sm-EDTMP and 153 SmCl 3 2h; HPLC analysis of the production ( 153 Sm-EDTMP) radiation self-decomposition with large dose. For the HPLC analysis, the condition is the mobile phase of 0.85 mol/mL PBS (pH7.5), flow rate of 0.5 mL/min, sampling of 15 μL. The results are following: (1) The 153 SmCl 3 not only is able to bind with the mouse plasma in vitro, but also is able to be absorbed by liver in vivo; (2) 153 Sm-EDTMP is not bind with the mouse plasma, the Cys and BSA in vitro and vivo; 153 Sm-EDTMP is not found in the extracted solution of liver homogenate at n(EDTMP): n(Sm) ≥ 5:1; 153 Sm-EDTMP is not decomposed in the urine, 1 53 Sm-EDTMP is stable in vivo; (3) 153 Sm-EDTMP radiation self-decomposition is not detected with large dose in the term of validity (6 d), but two small degradation peaks have been found in the production solution after 60 d, the radiochemistry purity of production is always great than 98% during the period

InP monolithically integrated label swapper device for spectral amplitude coded optical packet networks

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Doménech, J.D.; Rius, M.; Sancho, J.C.; Capmany, J.; Chen, L.R.; Habib, C.; Leijtens, X.J.M.; Vries, de T.; Heck, M.J.R.; Augustin, L.M.; Nötzel, R.; Robbins, D.J.

2010-01-01

In this paper a label swapping device, for spectral amplitude coded optical packet networks, fully integrated using InP technology is presented. Compared to previous demonstrations using discrete component assembly, the device footprint is reduced by a factor of 105 and the operation speed is

Operation, maintenance and utilization of the RA reactor - Report on operation in 1979; Pogon, odrzavanje i eksploatacija reaktora RA, Izvestaj o radu u 1979. godini

Energy Technology Data Exchange (ETDEWEB)

Milosevic, M

1979-12-15

During 1979 the RA reactor was in operation only three months, i.e. only 24% of the planned activity was achieved. The reactor operation was interrupted in March due to problems that could not be solved by the existing equipment. Alkalinity of the heavy water resulting from the existing ammonia ions could not be removed by the existing distillation system. In addition deposition of aluminium oxyhydrate on the fuel elements was increased. This was noticed during routine control when the reactor was shutdown for refueling. The decision of the Director general of the Institute and sanitary Inspector followed, prohibiting further reactor operation. A separate chapter of this report is devoted to the analysis of the difficulties and possible solution of the problem in cooperation with the experts from different laboratories of the Institute. Aged and damaged instruments at the reactor were not exchange due to lack of budget. During the operation there were no accidents. [Serbo-Croat] U toku 1979. godine plan rada ostvaren je sa 24%, odnosno reaktor je radio samo prva tri meseca. U martu je doslo do prekida rada reaktora zbog pojave koja se nije mogla otkloniti postojecom opremom. Alkalnost teske vode, posledica prisustva amonijum jona, ne moze se odstraniti sistemom destilacije. Pored toga usled dotrajalosti opreme povecano je talozenje aluminijum oksihidroksida na gorivnim elementima. Ova pojava uocena je tokom rutinske kontrole prilikom izmene goriva a usledila je obustava rada resenjem Direktora i sanitarnog inspektora. Posebno poglavlje ovog izvestaja posveceno je analizi teskoca u radu i reaktora i resavanju nastalih problema sa gorivom u saradnji sa saradnicima drugih laboratorija Instituta. Dotrajali uredjaji i oprema nisu zamenjeni usled nedostatka sredstava. U toku rada nije bilo akcidenata.

Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

Energy Technology Data Exchange (ETDEWEB)

Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

1993-04-01

The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

Submicron InP DHBT technology for high-speed high-swing mixed-signal ICs

DEFF Research Database (Denmark)

Godin, Jean; Nodjiadjim, V.; Riet, Muriel

2008-01-01

We report on the development of a submicron InP DHBT technology, optimized for the fabrication of 50-GHz-clock mixed signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Vari...... applications of interest....

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

High coercivity Sm-Co thin films from elemental Sm/Co multilayer deposition and their microstructural aspects

Energy Technology Data Exchange (ETDEWEB)

Krishnan, M. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Predeep, P. [Department of Physics, National Institute of Technology Calicut, Calicut 673601 (India); Sridhara Rao, D.V. [Defence Metallurgical Research Laboratories, Hyderabad 500058 (India); Prajapat, C.L.; Singh, M.R. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085 (India); Barshilia, Harish C. [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India); Chowdhury, P., E-mail: pchowdhury@nal.res.in [Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017 (India)

2017-05-15

Hard magnetic thin films with high coercivity were fabricated by magnetron sputtering on MgO(100) and quartz substrates. The films were grown by depositing sequentially Sm and Co layers at an elevated substrate temperature of 500 °C. Subsequent post-annealing was carried out at various temperatures in range of 500–700 °C to form Sm-Co hard magnetic thin films. X-ray diffraction studies revealed the formation of randomly oriented SmCo{sub 5} crystallites on quartz substrate, whereas, a textured growth of Sm{sub 2}Co{sub 7} with strong (110) crystalline phases was observed on MgO substrate. Microstructural analyses were carried out using Transmission Electron Microscopy (TEM) for samples grown on MgO substrate at 650 °C and inferred the presence of high density planar defects along with large grain boundaries. Further microdiffraction studies confirmed the presence of SmCo{sub 3} as an impurity phase in the films. Magnetic hysteresis measurements indicate the square hysteresis behaviors with high coercivity value of 3.1 T and 2.7 T for 650 °C annealed samples on both MgO and quartz substrates, respectively. The origin of such high coercivity value was then correlated with pinning type of spin reversal mechanism as confirmed through the analyses of demagnetization curves. The magnetic force microscopy images for films on MgO substrate, annealed at 650 °C, revealed the presence of magnetic domains with size higher than 1 µm. The formed magnetic domains lacked well defined boundaries indicating an enhanced exchange coupling between the grain clusters. - Highlights: • Ewald technique in micromagnetic simulations with periodic boundary conditions. • Effect of micromagnetic parameters on hysteresis in exchange spring magnets. • Importance of the interface exchange coupling for hard-soft nanocomposites. • Geometry dependence of the optimal soft phase size in exchange spring magnets.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Science.gov (United States)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Sm29, but not Sm22.6 retains its ability to induce a protective immune response in mice previously exposed to a Schistosoma mansoni infection.

Directory of Open Access Journals (Sweden)

Clarice Carvalho Alves

2015-02-01

Full Text Available BACKGROUND: A vaccine against schistosomiasis would have a great impact in disease elimination. Sm29 and Sm22.6 are two parasite tegument proteins which represent promising antigens to compose a vaccine. These antigens have been associated with resistance to infection and reinfection in individuals living in endemic area for the disease and induced partial protection when evaluated in immunization trials using naïve mice. METHODOLOGY/PRINCIPALS FINDINGS: In this study we evaluated rSm29 and rSm22.6 ability to induce protection in Balb/c mice that had been previously infected with S. mansoni and further treated with Praziquantel. Our results demonstrate that three doses of the vaccine containing rSm29 were necessary to elicit significant protection (26%-48%. Immunization of mice with rSm29 induced a significant production of IL-2, IFN-γ, IL-17, IL-4; significant production of specific antibodies; increased percentage of CD4+ central memory cells in comparison with infected and treated saline group and increased percentage of CD4+ effector memory cells in comparison with naïve Balb/c mice immunized with rSm29. On the other hand, although immunization with Sm22.6 induced a robust immune response, it failed to induce protection. CONCLUSION/SIGNIFICANCE: Our results demonstrate that rSm29 retains its ability to induce protection in previously infected animals, reinforcing its potential as a vaccine candidate.

Dopant-free twinning superlattice formation in InSb and InP nanowires

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

2017-11-15

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

High-efficiency red electroluminescent device based on multishelled InP quantum dots.

Science.gov (United States)

Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2016-09-01

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

Dopant-free twinning superlattice formation in InSb and InP nanowires

International Nuclear Information System (INIS)

Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

2017-01-01

Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Hydrogen-induced amorphization of SmFe{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kubis, M.; Handstein, A.; Gebel, B.; Gutfleisch, O.; Mueller, K.-H.; Schultz, L. [Institut fuer Festkoerper- und Werkstofforschung Dresden e.V. (Germany). Inst. fuer Metallische Werkstoffe

2000-07-01

The hydrogen absorption behavior of SmFe{sub 3} (PuNi{sub 3}-type structure) was observed in the range from 0.05 to 4 MPa by differential scanning calorimetry. The structural changes were observed by X-ray diffraction measurements. For pressures below 0.8 MPa two exothermic reactions were found which are attributed (i) to the interstitial absorption and (ii) to the disproportionation into SmH{sub 2} and {alpha}-Fe. For higher hydrogen pressures, the second exothermic peak occured at significantly lower temperatures and splitted into two peaks. The first one was identified as the exothermic signal of the hydrogen-induced amorphization of the SmFe{sub 3} hydride. The second peak is caused by the precipitation of SmH{sub 2} and {alpha}-Fe from the amorphous material. (orig.)

Preferential removal of Sm by evaporation from Nd-Sm mixture and its application in direct burn-up determination of spent nuclear fuel

International Nuclear Information System (INIS)

Sajimol, R.; Bera, S.; Nalini, S.; Sivaraman, N.; Joseph, M.; Kumar, T.

2016-01-01

Rate of evaporation of Sm and Nd from their mixture was studied based on their ion intensities using thermal ionization mass spectrometry. Because of the comparatively larger evaporation rate of Sm, it was found possible to get the isotopic composition of Nd (fission product monitor) free from isobaric interference of Sm isotopes. The decrease in ion intensity of Sm was studied as a function of time and filament temperature. Based on this study, an easy and time effective method for the determination of burn-up of spent nuclear fuel was examined and the results are compared with that obtained by the conventional method. Typical burn-up value obtained for a pressurized heavy water reactor fuel dissolver solution using the direct method by preferential evaporation of Sm is: 0.84 at.%, whereas the one obtained by the use of conventional method is 0.82 at.%. In both the cases, Nd was employed as the fission product monitor. (author)

High spin states in 143Sm

International Nuclear Information System (INIS)

Raut, R.; Ganguly, S.; Kshetri, R.; Banerjee, P.; Bhattacharya, S.; Dasmahapatra, B.; Mukherjee, A.; Mukherjee, G.; Sarkar, M. Saha; Goswami, A.; Gangopadhyay, G.; Mukhopadhyay, S.; Krishichayan,; Chakraborty, A.; Ghughre, S. S.; Bhattacharjee, T.; Basu, S. K.

2006-01-01

The high spin states of 143 Sm have been studied by in-beam γ-spectroscopy following the reaction 130 Te( 20 Ne,7n) 143 Sm at E lab =137 MeV, using a Clover detector array. More than 50 new gamma transitions have been placed above the previously known J π =23/2 - , 30 ms isomer at 2795 keV. The level scheme of 143 Sm has been extended up to 12 MeV and spin-parity assignments have been made to most of the newly proposed level. Theoretical calculation with the relativistic mean field approach using blocked BCS method, has been performed. A sequence of levels connected by M1 transitions have been observed at an excitation energy ∼8.6 MeV. The sequence appears to be a magnetic rotational band from systematics

Chemical methods for Sm-Nd separation and its application in isotopic geological dating

International Nuclear Information System (INIS)

Guo Qifeng.

1990-01-01

Three chemical methods for Sm-Nd separation are mainly desribed: low chromatography of butamone-ammonium thiocyanate for hight concentration Sm and Nd separation, P 240 column chromatography for medium concentration Sm-Nd separation, and pressure ion exchange for low concentration Sm-Nd. The first Sm-Nd synchrone obtained in China with Sm-Nd methods is introduced and Sm-Nd isotopic geological dating in Early Archaean rocks in eastern Hebei has been determined

Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Thualfiqar, Al-Sawaf; Weimann, Nils

2016-01-01

In this paper, balanced G-band Gm-boosted frequency doublers in transferred substrate (TS) InP HBT technology are reported for the first time. The Gm-boosted frequency doublers consist of a phase compensated Marchand balun, Gm-boosted doubler stage, and an optional cascode gain stage at the outpu...

Smáčivost povrchových úprav DPS

OpenAIRE

Minář, Jan

2016-01-01

Tato bakalářská práce se zabývá měřením smáčecích charakteristik pomocí metody smáčecích vah u vzorků různých povrchových úprav od firmy Gatema. Věnuje se vlivu izotermálního stárnutí a přetavovacích procesů na smáčecí charakteristiky povrchových úprav ENIG, bezolovnatý HAL a imerzní cín. U povrchové úpravy imerzním cínem je sledován vliv intermetalické vrstvy na celkovou smáčivost. Dále se zabývá smáčivostí vrstvy niklu, po odstripování zlata, u povrchové úpravy ENIG. This bachelor’s thes...

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

Science.gov (United States)

Weinreb, S.; Lai, R.; Erickson, N.; Gaier, T.; Wielgus, J.

2000-01-01

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

VUV light induced valence degeneration in Sm over-layer on HOPG

International Nuclear Information System (INIS)

Kutluk, G; Nakatake, M; Arita, M; Namatame, H; Taniguchi, M; Ishitobi, Y; Sumida, H

2013-01-01

Systematic investigation of the influence of vacuum ultraviolet (VUV) irradiation on the valence degeneration in a Sm over-layer on a HOPG substrate was performed using in-situ photoemission spectroscopy (XPS, UPS, and ARPES) for the Sm coverage regime of 0.05-3.6 Å. This investigation confirmed that VUV irradiation-induced degeneration of divalent Sm exerts a more profound effect than Sm contamination during photoemission spectroscopy even under UHV. We found that the charge transfer occurs mainly from divalent Sm to the HOPG surface.

Three-Stage InP Submillimeter-Wave MMIC Amplifier

Science.gov (United States)

Pukala, David; Samoska, Lorene; Man, King; Gaier, Todd; Deal, William; Lai, Richard; Mei, Gerry; Makishi, Stella

2008-01-01

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

β-decay spectroscopy of neutron-rich 160,161,162Sm isotopes

Directory of Open Access Journals (Sweden)

Patel Z.

2016-01-01

Full Text Available Neutron-rich 160,161,162Sm isotopes have been populated at the RIBF, RIKEN via β first time. β-coincident γ rays were observed in all three isotopes including γ rays from the isomeric decay of 160Sm and 162Sm. The isomers in 160Sm and 162Sm have previously been observed but have been populated via β decay for the first time. The isomeric state in 162Sm is assigned a 4−v72+[ 633 ]⊗v12−[ 521 ]${4^ - }v{{7 \\over 2}^ + }\\left[ {633} \\right] \\otimes v{{1 \\over 2}^ - }\\left[ {521} \\right]$ configuration based on the decay pattern. The level schemes of 160Sm and 162Sm are presented. The ground states in the parent nuclei 160Pm and 162Pm are both assigned a 6−v72+[633]⊗π52−[532]${6^ - }v{{7 \\over 2}^ + }\\left[ {633} \\right] \\otimes \\pi {{5 \\over 2}^ - }\\left[ {532} \\right]$ configuration based on the population of states in the daughter nuclei. Blocked BCS calculations were performed to further investigate the spin-parities of the ground states in 160Pm, 161Pm, and 162Pm, and the isomeric state in 162Sm

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

International Nuclear Information System (INIS)

Bierwagen, O.

2007-01-01

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Growth and anisotropic transport properties of self-assembled InAs nanostructures in InP

Energy Technology Data Exchange (ETDEWEB)

Bierwagen, O.

2007-12-20

Self-assembled InAs nanostructures in InP, comprising quantum wells, quantum wires, and quantum dots, are studied in terms of their formation and properties. In particular, the structural, optical, and anisotropic transport properties of the nanostructures are investigated. The focus is a comprehending exploration of the anisotropic in-plane transport in large ensembles of laterally coupled InAs nanostructures. The self-assembled Stranski-Krastanov growth of InAs nanostructures is studied by gas-source molecular beam epitaxy on both nominally oriented and vicinal InP(001). Optical polarization of the interband transitions arising from the nanostructure type is demonstrated by photoluminescence and transmission spectroscopy. The experimentally convenient four-contact van der Pauw Hall measurement of rectangularly shaped semiconductors, usually applied to isotropic systems, is extended to yield the anisotropic transport properties. Temperature dependent transport measurements are performed in large ensembles of laterally closely spaced nanostructures. The transport of quantum wire-, quantum dash- and quantum dot containing samples is highly anisotropic with the principal axes of conductivity aligned to the <110> directions. The direction of higher mobility is [ anti 110], which is parallel to the direction of the quantum wires. In extreme cases, the anisotropies exceed 30 for electrons, and 100 for holes. The extreme anisotropy for holes is due to diffusive transport through extended states in the [ anti 110], and hopping transport through laterally localized states in the [110] direction, within the same sample. A novel 5-terminal electronic switching device based on gate-controlled transport anisotropy is proposed. The gate-control of the transport anisotropy in modulation-doped, self-organized InAs quantum wires embedded in InP is demonstrated. (orig.)

Biological constraints limit the use of rapamycin-inducible FKBP12-Inp54p for depleting PIP2 in dorsal root ganglia neurons.

Science.gov (United States)

Coutinho-Budd, Jaeda C; Snider, Samuel B; Fitzpatrick, Brendan J; Rittiner, Joseph E; Zylka, Mark J

2013-09-08

Rapamycin-induced translocation systems can be used to manipulate biological processes with precise temporal control. These systems are based on rapamycin-induced dimerization of FK506 Binding Protein 12 (FKBP12) with the FKBP Rapamycin Binding (FRB) domain of mammalian target of rapamycin (mTOR). Here, we sought to adapt a rapamycin-inducible phosphatidylinositol 4,5-bisphosphate (PIP2)-specific phosphatase (Inp54p) system to deplete PIP2 in nociceptive dorsal root ganglia (DRG) neurons. We genetically targeted membrane-tethered CFP-FRBPLF (a destabilized FRB mutant) to the ubiquitously expressed Rosa26 locus, generating a Rosa26-FRBPLF knockin mouse. In a second knockin mouse line, we targeted Venus-FKBP12-Inp54p to the Calcitonin gene-related peptide-alpha (CGRPα) locus. We hypothesized that after intercrossing these mice, rapamycin treatment would induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in CGRP+ DRG neurons. In control experiments with cell lines, rapamycin induced translocation of Venus-FKBP12-Inp54p to the plasma membrane, and subsequent depletion of PIP2, as measured with a PIP2 biosensor. However, rapamycin did not induce translocation of Venus-FKBP12-Inp54p to the plasma membrane in FRBPLF-expressing DRG neurons (in vitro or in vivo). Moreover, rapamycin treatment did not alter PIP2-dependent thermosensation in vivo. Instead, rapamycin treatment stabilized FRBPLF in cultured DRG neurons, suggesting that rapamycin promoted dimerization of FRBPLF with endogenous FKBP12. Taken together, our data indicate that these knockin mice cannot be used to inducibly deplete PIP2 in DRG neurons. Moreover, our data suggest that high levels of endogenous FKBP12 could compete for binding to FRBPLF, hence limiting the use of rapamycin-inducible systems to cells with low levels of endogenous FKBP12.

Higher-order scalar interactions and SM vacuum stability

Energy Technology Data Exchange (ETDEWEB)

Lalak, Zygmunt; Lewicki, Marek; Olszewski, Paweł [Institute of Theoretical Physics, Faculty of Physics, University of Warsawul. Hoża 69, Warsaw (Poland)

2014-05-26

Investigation of the structure of the Standard Model effective potential at very large field strengths opens a window towards new phenomena and can reveal properties of the UV completion of the SM. The map of the lifetimes of the vacua of the SM enhanced by nonrenormalizable scalar couplings has been compiled to show how new interactions modify stability of the electroweak vacuum. Whereas it is possible to stabilize the SM by adding Planck scale suppressed interactions and taking into account running of the new couplings, the generic effect is shortening the lifetime and hence further destabilisation of the SM electroweak vacuum. These findings have been illustrated with phase diagrams of modified SM-like models. It has been demonstrated that stabilisation can be achieved by lowering the suppression scale of higher order operators while picking up such combinations of new couplings, which do not deepen the new minima of the potential. Our results show the dependence of the lifetime of the electroweak minimum on the magnitude of the new couplings, including cases with very small couplings (which means very large effective suppression scale) and couplings vastly different in magnitude (which corresponds to two different suppression scales)

Radiation protection at the RA Reactor in 1996, Part -2, Annex 1, Control of the working environment, dosimetry and radiation protection; Prilog 1 - Zastita od zracenja kod reaktora RA u 1996. godini - Deo 2 - Kontrola radne sredine - dozimetrija i tehnicka zastita kod reaktora RA

Energy Technology Data Exchange (ETDEWEB)

Pavlovic, R; Kalinic, S [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1996-12-01

This report contains data and analysis of the of measured sample results collected during radiation protection control in the working environment of the RA reactor. First part contains basic exposure values and statistical review of the the total number of radiation measurements. It includes contents of radioactive gasses and effluents in the air, as well as the level of surface contamination of clothes and uncovered parts of the personnel bodies. Second part deals with the analysis of personnel doses. Third part of this annex contains basic data about the quantity of collected radioactive waste, total quantity of contaminated and decontaminated surfaces. Previously initiated actions concerning future decision on the status of the RA reactor were continued during 1996. Actions in 1996 were focused to detailed analysis of the conditions of storing the spent fuel in the storage pools and preparing the documentation for decision making about the methods for the improvement of the mentioned conditions. It is stated that there have been no accidents that could cause significant contamination of working surfaces and components nor radiation exposure of the personnel. [Serbo-Croat] U ovom izvestaju prikazani su i analizirani reprezentativni rezultati sakupljeni u okviru kontrole radne sredine i tehnicke zastite od zracenja reaktora RA. U prvom delu izvestaja izlozeni su podaci o osnovnim vidovima izlaganja zracenju i statisticki pregled ukupnog broja radijacionih merenja. Dati su takodje rezultati merenja sadrzaja radioktivnih gasova i aerosola u vazduhu, kao i stepena kontaminacije povrsina, odece i otkrivenih delova tela osoblja. U drugom delu izvestaja izlozeni su rezultati analize ozracivanja radnog osoblja. U trecem delu izvestaja navedeni su osnovni podaci o ukupnim kolicinama sakupljenog radioaktivnog materijala, ukupnoj velicini kontaminiranih i dekontaminiranih povrsina i broju dekontaminiranih predmeta. U 1996. godini nastavljena je akcija zapoceta prethodne

Synthesis and magnetic properties of SmOOH crystals

Energy Technology Data Exchange (ETDEWEB)

Samata, Hiroaki, E-mail: samata@maritime.kobe-u.ac.jp [Graduate School of Maritime Sciences, Kobe University, Fukaeminami, Higashinada, Kobe, Hyogo 658-0022 (Japan); Hanioka, Masashi [Graduate School of Maritime Sciences, Kobe University, Fukaeminami, Higashinada, Kobe, Hyogo 658-0022 (Japan); Ozawa, Tadashi C. [Materials Development Group, Superconducting Properties Unit, National Institute for Materials Science, Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2016-01-15

Samarium oxyhydroxide (SmOOH) crystals were synthesized using a flux method. The as-grown crystals were yellowish, transparent, and elongated with a maximum length of approximately 1.0 mm. SmOOH adopts a monoclinic structure in the space group P2{sub 1}/m with a=0.4356 nm, b=0.3766 nm, c=0.6139 nm, and β=108.464°. The magnetic susceptibility of the SmOOH crystals exhibited typical Van Vleck paramagnetism, and the experimental data at temperatures above 200 K were in close agreement with the calculated results using a spin-orbit coupling constant λ=443 K (308 cm{sup −1}). - Highlights: • SmOOH crystals were synthesized via flux method and characterized. • Magnetic susceptibilities above 200 K agreed with theoretical Van Vleck values. • Discrepancies were observed at lower temperatures based on the crystalline field.

Fabrication and characterization of InP fresnel microlenses

International Nuclear Information System (INIS)

Diadiuk, V.; Walpole, J.N.; Liau, Z.L.

1987-01-01

Since diode lasers typically have a beam divergence of a few tens of degrees, collimating the laser outputs leads to greatly far-field patterns, which, in turn translates into more power in the main lobe of the combined output. Achieving this collimation in the case of a diode laser array, with its small device-to-device distance, requires an array of similarly spaced microlenses with very short focal length, small diameter and small F number. In this paper, the authors describe the fabrication and performance of a Fresnel microlens array etched directly in InP wafers; these microlenses have been used successfully to collimate the output of GainAsP/InP buried-heterostructure (BH) diode lasers

Optical properties of InxGa1-xP/InP grown at high fluence Ga+ implantation on InP using focused ion beam

International Nuclear Information System (INIS)

Fang, Hsin-Chiao; Liu, Chuan-Pu; Dhara, Sandip

2011-01-01

Single-crystalline InP(1 0 0) substrate was implanted by 30 keV Ga + ions with fluences of 1 x 10 16 -1.5 x 10 17 cm -2 followed by post-annealing treatment at 750 o C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga + -implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In x Ga 1-x P phase is formed at a critical fluence of 7 x 10 16 cm -2 . The newly grown phase was identified with the appearance of Ga rich TO InP and In rich TO GaP modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.

Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

NARCIS (Netherlands)

Tassaert, M.; Dorren, H.J.S.; Roelkens, G.; Raz, O.

2012-01-01

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals

Application of MSM InP detectors to the measurement of pulsed X-ray radiation

Czech Academy of Sciences Publication Activity Database

Ryc, L.; Dobrzanski, L.; Dubecký, L.; Kaczmarczyk, J.; Pfeifer, Miroslav; Riesz, F.; Slysz, W.; Surma, B.

2008-01-01

Roč. 163, 4-6 (2008), 559-567 ISSN 1042-0150 R&D Projects: GA MŠk(CZ) LC528 Institutional research plan: CEZ:AV0Z10100523 Keywords : InP detector * X-ray detector * picosecond detector * laser plasma Subject RIV: BH - Optics, Masers, Lasers Impact factor: 0.415, year: 2008

Sm2, a paralog of the Trichoderma cerato-platanin elicitor Sm1, is also highly important for plant protection conferred by the fungal-root interaction of Trichoderma with maize.

Science.gov (United States)

Gaderer, Romana; Lamdan, Netta L; Frischmann, Alexa; Sulyok, Michael; Krska, Rudolf; Horwitz, Benjamin A; Seidl-Seiboth, Verena

2015-01-16

The proteins Sm1 and Sm2 from the biocontrol fungus Trichoderma virens belong to the cerato-platanin protein family. Members of this family are small, secreted proteins that are abundantly produced by filamentous fungi with all types of life-styles. Some species of the fungal genus Trichoderma are considered as biocontrol fungi because they are mycoparasites and are also able to directly interact with plants, thereby stimulating plant defense responses. It was previously shown that the cerato-platanin protein Sm1 from T. virens - and to a lesser extent its homologue Epl1 from Trichoderma atroviride - induce plant defense responses. The plant protection potential of other members of the cerato-platanin protein family in Trichoderma, however, has not yet been investigated. In order to analyze the function of the cerato-platanin protein Sm2, sm1 and sm2 knockout strains were generated and characterized. The effect of the lack of Sm1 and Sm2 in T. virens on inducing systemic resistance in maize seedlings, challenged with the plant pathogen Cochliobolus heterostrophus, was tested. These plant experiments were also performed with T. atroviride epl1 and epl2 knockout strains. In our plant-pathogen system T. virens was a more effective plant protectant than T. atroviride and the results with both Trichoderma species showed concordantly that the level of plant protection was more strongly reduced in plants treated with the sm2/epl2 knockout strains than with sm1/epl1 knockout strains. Although the cerato-platanin genes sm1/epl1 are more abundantly expressed than sm2/epl2 during fungal growth, Sm2/Epl2 are, interestingly, more important than Sm1/Epl1 for the promotion of plant protection conferred by Trichoderma in the maize-C. heterostrophus pathosystem.

High quality InAsSb grown on InP substrates using AlSb/AlAsSb buffer layers

International Nuclear Information System (INIS)

Wu, B.-R.; Liao, C.; Cheng, K. Y.

2008-01-01

High quality InAsSb grown on semi-insulating InP substrates by molecular beam epitaxy was achieved using AlSb/AlAsSb structure as the buffer layer. A 1000 A InAsSb layer grown on top of 1 μm AlSb/AlAsSb buffer layer showed a room temperature electron mobility of ∼12 000 cm 2 /V s. High structural quality and low misfit defect density were also demonstrated in the InAsSb layer. This novel AlSb/AlAsSb buffer layer structure with the AlAsSb layer lattice matched to InP substrates could enhance the performance of optoelectronic devices utilizing 6.1 A family of compound semiconductor alloys

The ternary systems Sc-Sm(Dy)-Si at 870 K

International Nuclear Information System (INIS)

Kotur, B.Ya.; Mokra, I.Ya.; Toporinskij, A.Ya.

1991-01-01

Isothermal cross sections of the ternary systems Sc-Sm-Si and Sc-Dy-Si at 870 K have been plotted. Investigation of scandium and disprosium in ternary systems have been examined by X-ray diffraction and microstructure analysis. Besides literary data on binary systems Sc-Si, Sm-Si, Dy-Si have been used. Formation of limited (Sc-Sm-Si, Sc-Dy-Si) and continuous (Sc-Dy-Si) solid solutions based on bisilicides of Sc and Sm(Dy) is discovered. Two and five ternary compounds in Sc-Sm-Si and Sc-Dy-Si systems have been determined and their crystal structure has been established. When investigating of Sc-(rare earth element)-Si ternary systems and should take into account the specific interaction of scandium and samarium with REE

Monte Carlo investigation of minority electron transport in InP

International Nuclear Information System (INIS)

Osman, M.A.; Grubin, H.L.

1989-01-01

This paper discusses the investigation of the transport of minority electrons in p-type InP for acceptor doping level of 10 18 cm 3 using Monte Carlo procedures. It is found that the velocity of minority electrons are significantly lower than that of majority electrons for fields below 15 kV/cm and slightly higher at higher fields. The study shows that the interaction between the electrons and majority holes leads to reducing the mobility of electrons from 2000 cm 2 /Vs to 1500 cm 2 /Vs

Klimaforsøg med fravænnede smågrise

DEFF Research Database (Denmark)

Feenstra, A.

Publikationen belyser betydningen af luftfugtighed og ventilationsluftmængder for smågrise. Undersøgelsen var led i bestræbelserne på at nedbringe energiforbruget i smågrisestalde, og resultaterne viser at ventilationsmængden kan formindskes uden skadelige virkninger for dyrene.......Publikationen belyser betydningen af luftfugtighed og ventilationsluftmængder for smågrise. Undersøgelsen var led i bestræbelserne på at nedbringe energiforbruget i smågrisestalde, og resultaterne viser at ventilationsmængden kan formindskes uden skadelige virkninger for dyrene....

Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy

International Nuclear Information System (INIS)

Gong, Q.; Noetzel, R.; Veldhoven, P.J. van; Eijkemans, T.J.; Wolter, J.H.

2004-01-01

We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated surface In layer floating on the GaInAsP buffer layer

Purification of the spliced leader ribonucleoprotein particle from Leptomonas collosoma revealed the existence of an Sm protein in trypanosomes. Cloning the SmE homologue.

Science.gov (United States)

Goncharov, I; Palfi, Z; Bindereif, A; Michaeli, S

1999-04-30

Trans-splicing in trypanosomes involves the addition of a common spliced leader (SL) sequence, which is derived from a small RNA, the SL RNA, to all mRNA precursors. The SL RNA is present in the cell in the form of a ribonucleoprotein, the SL RNP. Using conventional chromatography and affinity selection with 2'-O-methylated RNA oligonucleotides at high ionic strength, five proteins of 70, 16, 13, 12, and 8 kDa were co-selected with the SL RNA from Leptomonas collosoma, representing the SL RNP core particle. Under conditions of lower ionic strength, additional proteins of 28 and 20 kDa were revealed. On the basis of peptide sequences, the gene coding for a protein with a predicted molecular weight of 11.9 kDa was cloned and identified as homologue of the cis-spliceosomal SmE. The protein carries the Sm motifs 1 and 2 characteristic of Sm antigens that bind to all known cis-spliceosomal uridylic acid-rich small nuclear RNAs (U snRNAs), suggesting the existence of Sm proteins in trypanosomes. This finding is of special interest because trypanosome snRNPs are the only snRNPs examined to date that are not recognized by anti-Sm antibodies. Because of the early divergence of trypanosomes from the eukaryotic lineage, the trypanosome SmE protein represents one of the primordial Sm proteins in nature.

Changes of surface electron states of InP under soft X-rays irradiation

International Nuclear Information System (INIS)

Yang Zhian; Yang Zushen; Jin Tao; Qui Rexi; Cui Mingqi; Liu Fengqin

1999-01-01

Changes of surface electronic states of InP under 1 keV X-ray irradiation is studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet ray energy spectroscopy (UPS). The results show that the soft X-ray irradiation has little effect on In atoms but much on P atoms. The authors analysed the mechanism of irradiation and explained the major effect

Solid-solid synthesis and structural phase transition process of SmF3

Science.gov (United States)

Yan, Qi-Cao; Guo, Xing-Min

2018-04-01

Mazes of contradictory conclusions have been obtained by previous researches about structural phase transition process of SmF3. In this paper, the single crystals of SmF3 (hexagonal and orthorhombic) were prepared by solid-solid synthesis, which have shown gradual changes in crystal growth modes with the increase temperature and holding time. Furthermore, we propose the phase transition process of in SmF3. Hexagonal symmetry of SmF3 (space group Pnma) was prepared firstly by heating Sm2O3 and NH4HF2 over 40 min at 270 °C. And then orthorhombic symmetry of SmF3 (space group P63mc) was obtained by heating hexagonal symmetry over 10 h at 650 °C. The reaction of SmF3 (hexagonal) = SmF3 (orthorhombic) is extremely sluggish at a low temperature (less than 650 °C), which was seen as a Mixed Grown Region.

Synthesis and photoluminescence properties of Sm3+-doped CaWO4 nanoparticles

International Nuclear Information System (INIS)

Xiao Qi; Zhou Qitao; Li Ming

2010-01-01

The Sm 3+ -doped CaWO 4 nanoparticles were synthesized by hydrothermal method. The room temperature photoluminescence (PL) spectra of Sm 3+ -doped CaWO 4 nanoparticles doped with different Sm 3+ concentrations under 405 nm excitation have been investigated. The PL spectra showed four strong emission peaks at 460, 571, 609, and 653 nm. The first emission peak at 460 nm could be due to a structural defect of the lattice, an oxygen-deficient WO 3 complex. The other three emissions at 571, 609, and 653 nm were due to the f-f forbidden transitions of the 4f electrons of Sm 3+ , corresponding to 4 G 5/2 → 6 H 5/2 (571 nm), 6 H 7/2 (609 nm), and 6 H 9/2 (653 nm), respectively. In addition, the optimum Sm 3+ concentration in CaWO 4 nanoparticles for optical emission was determined to be 1.0%. The Sm 3+4 G 5/2 → 6 H 7/2 (609 nm) emission intensity of Sm 3+ -doped CaWO 4 nanoparticles significantly increased with the increase of Sm 3+ concentration, and showed a maximum when Sm 3+ doping content was 1.0%. If Sm 3+ concentration continued to increase, namely more than 1.0%, the Sm 3+4 G 5/2 → 6 H 7/2 emission intensity would decrease. The present materials might be a promising phosphor for white-light LED applications.

Sorption of samarium in soils: influence of soil properties and Sm concentration

Energy Technology Data Exchange (ETDEWEB)

Ramirez-Guinart, Oriol; Salaberria, Aitor; Rigol, Anna; Vidal, Miquel [Analytical Chemistry department, Faculty of Chemistry, University of Barcelona, Marti i Franques 1-11, 08028, Barcelona (Spain)

2014-07-01

Due to the fact that barriers of Deep Geological Repositories (DGR) may lose efficiency before the radioisotopes present in the High Level Radioactive Waste (HLRW) completely decay, it is possible that, in the long-term, radioactive leachates may escape from the DGR and reach the soil and water compartments in the biosphere. Therefore, it is required to examine the interaction and mobility of radionuclides present in the HLRW, or their chemical analogues, to predict the impact of their eventual incorporation in the biosphere and to assess the derived risk. Although relevant data have been recently obtained for a few radionuclides in soils, there are still some important gaps for some radionuclides, such us for samarium (Sm). Sm is a lanthanide that, besides being considered as a natural analogue of actinides, may also be present in HLRW in the form of the radioactive isotope {sup 151}Sm. The main objective of this work was to obtain sorption data (K{sub d}) of {sup 151}Sm gathered from a set of soil samples physicochemical fully-characterized (pH, texture, cationic exchange capacity, soil solution cationic composition, organic matter, carbonate and metallic oxides content, etc.). Additionally, as an alternative for testing sorption capacity of radionuclides in soils is the use of the corresponding stable isotope or a chemical analogue, the influence of Sm concentration was also checked. To evaluate {sup 151}Sm sorption, batch assays were carried out for each soil sample, which consisted in a pre-equilibration step of 2 g of each soil with 50 ml of double deionised water, and a subsequent equilibration step with the same solution, but labelled with {sup 151}Sm. The activity of {sup 151}Sm in initial and final solutions was measured by liquid scintillation and K{sub d} ({sup 151}Sm) data were calculated. The reversibly sorbed fraction was estimated by the application of a single extraction test, with double deionised water, to soil residues coming from the previous

Determination of the {sup 151}Sm half-life

Energy Technology Data Exchange (ETDEWEB)

Be, Marie-Martine; Cassette, Philippe [CEA, LIST, Gif sur Yvette (France). LNE-Laboratoire National Henri Becquerel; Isnard, Helene [CEA-LANIE, Gif sur Yvette (France); and others

2015-07-01

New measurements have been undertaken to determine the half-life of {sup 151}Sm. A pure {sup 151}Sm solution was obtained after chemical separation from a samarium solution resulting from the dissolution of an irradiated samarium sample. The concentration of {sup 151}Sm in the solution was measured by mass spectrometry, combined with the isotope dilution technique. The activity of the solution was measured by liquid scintillation counting by six European laboratories as part of an international comparison. These combined results lead to a half-life of T{sub 1/2} = 94.6(6)a.

Data about operation and utilization of the RA in 1976 - Report, Annex I; Prilog I - Podaci o radu i iskoriscenosti reaktora RA u 1976. godini - Izvestaj -

Energy Technology Data Exchange (ETDEWEB)

Stanic, A [Institute of Nuclear Sciences Boris Kidric, Vinca, Beograd (Serbia and Montenegro)

1976-12-15

, nemogucnost da se predvidi tacno vreme za eksperimente u okviru (uspesno provedenog) programa prevodjenja reaktora RA na novo visokoobogaceno gorivo, posto neki od ovih eksperimenata takodje nikada ranije nije radjen. Sem toga bilo je i nepredvidjenih vecih remontnih radova zbog nepredvidjenih kvarova. Planirano je 6 izmena goriva koje su ostvarene sa zakasnjenjem. Podaci o planiranom i ostvarenom radu reaktora u 1976. godini prikazani su u ovom izvestaju kao i podaci o prekidu rada. Kracih prekida i sigurnosnih zaustavljanja je bilo 12 u ukupnom trajanju od 64 casa. Reaktor je radio na nominalnoj snazi od 6.5 MW. Akcidenata vecih razmera nije bilo, medjutim dva slucaja mogu se opisati kao akcidentalne situacije po nacinu kako su nastali. Prvi je prskanje cevi kod lezaja teskovodne pumpe a drugi kontaminacija hale i hodnika nastala prilikom pripreme masine za izmenu goriva (izlivanje teske vode). Ovaj prilog sadrzi i podatke o koriscenju eksperimentalnog prostora i iskoriscenosti reaktora.

Anti-skin-aging benefits of exopolymers from Aureobasidium pullulans SM2001.

Science.gov (United States)

Kim, Kyung Hu; Park, Soo Jin; Lee, Ji Eun; Lee, Young Joon; Song, Chang Hyun; Choi, Seong Hun; Ku, Sae Kwang; Kang, Su Jin

2014-01-01

There have been many attempts to search for affordable and effective functional cosmetic ingredients, especially from natural sources. As research into developing a functional cosmetic ingredient, we investigated whether exopolymers from Aureobasidium pullulans SM2001 (E-AP-SM2001) exert antioxidant, antiwrinkle, whitening, and skin moisturizing effects. Antioxidant effects of E-AP-SM2001 were determined by measuring free radical scavenging capacity and superoxide dismutase (SOD)-like activity. Antiwrinkle effects were assessed through the inhibition of hyaluronidase, elastase, collagenase, and matrix metalloproteinase (MMP)-1. Whitening effects were measured by tyrosinase inhibition assay, and by melanin formation test in B16/F10 melanoma cells. Skin moisturizing effects were detected by mouse skin water content test. E-AP-SM2001 showed potent DPPH radical scavenging activity and SOD-like effects. Additionally, hyaluronidase, elastase, collagenase, and MMP-1 activities were significantly inhibited by E-AP-SM2001. We also observed that E-AP-SM2001 effectively reduced melanin production by B16/F10 melanoma cells and mushroom tyrosinase activities. Furthermore, significant increases in skin water content were detected in E-AP-SM2001- treated mouse skin, as compared with vehicle-treated control skin. Notably, a mask pack containing E-AP-SM2001 showed a >twofold more extensive moisturizing effect compared with one containing Saccharomycopsis ferment filtrate. Our results suggest that E-AP-SM2001 has adequate antiaging, antiwrinkle, and whitening benefits and skin moisturizing effect. These effects involve reducing hyaluronidase, elastase, collagenase, and MMP-1 activities, as well as inhibition of melanin production and tyrosinase activities. Therefore, the antioxidant E-AP-SM2001 may serve as a predictable functional ingredient.

Comparative study of porosification in InAs, InP, ZnSe and ZnCdS

International Nuclear Information System (INIS)

Monaico, Eduard; Tiginyanu, Ion; Nielsch, Kornelius; Ursaki, Veaceslav; Colibaba, Gleb; Nedeoglo, Dmitrii; Cojocaru, Ala; Foell Helmut

2013-01-01

We report on a comparative study of the pore growth during anodization of a narrow-bandgap III-V compound (InAs), a medium-bandgap III-V one (InP) and wide-bandgap II-VI semiconductors (ZnSe and Zn 0,4 Cd 0,6 S). According to the obtained results, the morphology of the porous layers can be controlled by the composition of the electrolyte and the applied electrochemical parameters. It was evidenced that in the narrow bandgap semiconductor InAs it is difficult to control the mechanism of pore growth. Both current line oriented pores and crystallographically oriented pores were produced in the medium-bandgap material InP. The electrochemical nanostructuring of wide-bandgap semiconductors realized in single crystalline high conductivity samples evidenced only current-line oriented pores. This behavior is explained in terms of difference in the values of electronegativity of the constituent atoms and the degree of ionicity. (authors)

Electrochemical preparation of Al–Sm intermetallic compound whisker in LiCl–KCl Eutectic Melts

International Nuclear Information System (INIS)

Ji, De−Bin; Yan, Yong−De; Zhang, Mi−Lin; Li, Xing; Jing, Xiao−Yan; Han, Wei; Xue, Yun; Zhang, Zhi−Jian; Hartmann, Thomas

2015-01-01

Highlights: • The reduction process of Sm(III) was investigated in LiCl–KCl melt on an aluminum electrode at 773 K. • Al–Sm alloy with different phase structure (Al 2 Sm and Al 3 Sm) was prepared by potentiostatic electrolysis on an aluminum electrode with the change of electrolytic potentials and time in LiCl–KCl–SmCl 3 melts. • Al − Sm alloy containing whiskers (Al 4 Sm) was obtained by potentiostatic electrolysis (−2.10 V) on an aluminum electrode for 7 hours with the change of electrolytic temperature and cooling rate in LiCl–KCl–SmCl 3 (16.5 wt. %) melts. The results from micro–hardness test and potentiodynamic polarization test show the micro hardness and corrosion property are remarkably improved with the help of Al–Sm intermetallic compound whiskers. - Abstract: This work presents the electrochemical study of Sm(III) on an aluminum electrode in LiCl–KCl melts at 773 K by different electrochemical methods. Three electrochemical signals in cyclic voltammetry, square wave voltammetry, open circuit chronopotentiometry, and cathode polarization curve are attributed to different kinds of Al–Sm intermetallic compounds, Al 2 Sm, Al 3 Sm, and Al 4 Sm, respectively. Al–Sm alloy with different phase structure (Al 2 Sm and Al 3 Sm) could be obtained by the potentiostatic electrolysis with the change of electrolytic potentials and time. Al–Sm alloy containing whiskers (Al 4 Sm) was obtained by potentiostatic electrolysis (−2.10 V) on an aluminum electrode for 7 hours with the change of electrolytic temperature and cooling rate in LiCl–KCl–SmCl 3 (16.5 wt. %) melts. The XRD and SEM&EDS were employed to investigate the phase composition and microstructure of Al–Sm alloy. SEM analysis shows that lots of needle−like precipitates formed in Al–Sm alloy, and their ratios of length to diameter are found to be greater than 10 to 1. The TEM and electron diffraction pattern were performed to investigate the crystal structure of the

Isotope shifts and hyperfine splittings in 144-154Sm I

International Nuclear Information System (INIS)

England, J.G.; Grant, I.S.; Newton, G.W.A.; Walker, P.M.

1990-01-01

The isotope shifts and hyperfine splittings have been measured in 144-154 Sm I using the crossed-beam laser fluorescence method. Transitions at 598.98 nm and 570.68 nm were investigated for all isotopes except 146 Sm and 153 Sm, in which measurements were only obtained at 570.68 nm. Laser-induced fluorescence has not previously been reported for 145 Sm. The magnetic dipole and electric quadrupole moments of the odd isotopes and the changes in mean square radii of the even ones are shown to be consistent with the information obtained from nuclear spectroscopy. (author)

Sulfur as a surface passivation for InP

Science.gov (United States)

Iyer, R.; Chang, R. R.; Lile, D. L.

1988-01-01

The use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated. Results of high-frequency and quasi-static capacitance-voltage measurements, as well as enhancement mode insulated gate field-effect transistor (FET) transductance and drain current stability studies, all support the efficacy of this approach for metal-insulator-semiconductor application of this semiconductor. In particular, surface state values in the range of 10 to the 10th to a few 10 to the 11th/sq cm per eV and enhancement mode FET drain current drifts of less than 5 percent over a 12 h test period were measured.

A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

DEFF Research Database (Denmark)

Johansen, Tom Keinicke; Vidkjær, Jens; Krozer, Viktor

2008-01-01

The paper presents analysis and design of a Q-band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (...

Guided ion beam and theoretical studies of the bond energy of SmS+

Science.gov (United States)

Armentrout, P. B.; Demireva, Maria; Peterson, Kirk A.

2017-12-01

Previous work has shown that atomic samarium cations react with carbonyl sulfide to form SmS+ + CO in an exothermic and barrierless process. To characterize this reaction further, the bond energy of SmS+ is determined in the present study using guided ion beam tandem mass spectrometry. Reactions of SmS+ with Xe, CO, and O2 are examined. Results for collision-induced dissociation processes with all three molecules along with the endothermicity of the SmS+ + CO → Sm+ + COS exchange reaction are combined to yield D0(Sm+-S) = 3.37 ± 0.20 eV. The CO and O2 reactions also yield a SmSO+ product, with measured endothermicities that indicate D0(SSm+-O) = 3.73 ± 0.16 eV and D0(OSm+-S) = 1.38 ± 0.27 eV. The SmS+ bond energy is compared with theoretical values characterized at several levels of theory, including CCSD(T) complete basis set extrapolations using all-electron basis sets. Multireference configuration interaction calculations with explicit spin-orbit calculations along with composite thermochemistry using the Feller-Peterson-Dixon method and all-electron basis sets were also explored for SmS+, and for comparison, SmO, SmO+, and EuO.

Prediction of the new efficient permanent magnet SmCoNiFe3

Science.gov (United States)

Söderlind, P.; Landa, A.; Locht, I. L. M.; Åberg, D.; Kvashnin, Y.; Pereiro, M.; Däne, M.; Turchi, P. E. A.; Antropov, V. P.; Eriksson, O.

2017-09-01

We propose a new efficient permanent magnet, SmCoNiFe3, which is a development of the well-known SmCo5 prototype. More modern neodymium magnets of the Nd-Fe-B type have an advantage over SmCo5 because of their greater maximum energy products due to their iron-rich stoichiometry. Our new magnet, however, removes most of this disadvantage of SmCo5 while preserving its superior high-temperature efficiency over the neodymium magnets. We show by means of first-principles electronic-structure calculations that SmCoNiFe3 has very favorable magnetic properties and could therefore potentially replace SmCo5 or Nd-Fe-B types in various applications.

Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates

KAUST Repository

Zheng, Maxwell

2015-08-25

The design and performance of solar cells based on InP grown by the nonepitaxial thin-film vapor-liquid-solid (TF-VLS) growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and indium tin oxide transparent top electrode. An ex situ p-doping process for TF-VLS grown InP is introduced. Properties of the cells such as optoelectronic uniformity and electrical behavior of grain boundaries are examined. The power conversion efficiency of first generation cells reaches 12.1% under simulated 1 sun illumination with open-circuit voltage (VOC) of 692 mV, short-circuit current (JSC) of 26.9 mA cm-2, and fill factor (FF) of 65%. The FF of the cell is limited by the series resistances in the device, including the top contact, which can be mitigated in the future through device optimization. The highest measured VOC under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP. The design and performance of solar cells based on indium phosphide (InP) grown by the nonepitaxial thin-film vapor-liquid-solid growth technique is investigated. The cell structure consists of a Mo back contact, p-InP absorber layer, n-TiO2 electron selective contact, and an indium tin oxide transparent top electrode. The highest measured open circuit voltage (VOC) under 1 sun is 692 mV, which approaches the optically implied VOC of ≈795 mV extracted from the luminescence yield of p-InP.

Seeded growth of InP and InAs quantum rods using indium acetate and myristic acid

International Nuclear Information System (INIS)

Shweky, Itzhak; Aharoni, Assaf; Mokari, Taleb; Rothenberg, Eli; Nadler, Moshe; Popov, Inna; Banin, Uri

2006-01-01

A synthesis of soluble III-V semiconductor quantum rods using gold nanoparticles to direct and catalyze one-dimensional growth is developed. The growth takes place via the solution-liquid-solid (SLS) mechanism where proper precursors are injected into a coordinating solvent. We report the synthesis of InP nanorods using indium acetate and myristic acid with gold nanoparticles as the catalysts in the SLS growth mode. A similar route was successfully developed for the growth of InAs nanorods. We find that the amount of Au catalyst in the reaction is an important parameter to achieve shape control. Transmission electron microscope (TEM) images of InP and InAs nanocrystals revealed that the crystals are mostly rod-shaped, and provide strong evidence for Au presence in one edge. The rods were characterized structurally using X-ray diffraction and high-resolution TEM and optically by absorption and photoluminescence

Optimum third harmonic generation efficiency in the far infrared in Si, GaAs and InP

International Nuclear Information System (INIS)

Brazis, R.; Raguotis, R.; Siegrist, M.R.

1997-12-01

We investigate by means of a Monte Carlo technique the nonlinear drift response of electrons to high power electromagnetic waves in Si, GaAs and InP. The first and third harmonic drift velocity amplitudes and phases are presented as function of the pumping wave frequency in the range of 200 to 500 GHz. The third harmonic generation efficiency is found to reach a maximum at a pumping wave amplitude of 10-25 kV/cm depending on the material and the lattice temperature. Cooling down to liquid nitrogen temperature results in an improvement of the efficiency by a factor of 2 to 10, depending on the material and the pumping wave amplitude. Cooled GaAs and InP are both an order of magnitude more efficient than Si at ambient temperature, for which to date the best measured performance has been reported. (author) 2 figs., 5 refs

Superconductivity in Sm-doped CaFe2As2 single crystals

Science.gov (United States)

Dong-Yun, Chen; Bin-Bin, Ruan; Jia, Yu; Qi, Guo; Xiao-Chuan, Wang; Qing-Ge, Mu; Bo-Jin, Pan; Tong, Liu; Gen-Fu, Chen; Zhi-An, Ren

2016-06-01

In this article, the Sm-doping single crystals Ca1 - x Sm x Fe2As2 (x = 0 ˜ 0.2) were prepared by the CaAs flux method, and followed by a rapid quenching treatment after the high temperature growth. The samples were characterized by structural, resistive, and magnetic measurements. The successful Sm-substitution was revealed by the reduction of the lattice parameter c, due to the smaller ionic radius of Sm3+ than Ca2+. Superconductivity was observed in all samples with onset T c varying from 27 K to 44 K upon Sm-doping. The coexistence of a collapsed phase transition and the superconducting transition was found for the lower Sm-doping samples. Zero resistivity and substantial superconducting volume fraction only happen in higher Sm-doping crystals with the nominal x > 0.10. The doping dependences of the c-axis length and onset T c were summarized. The high-T c observed in these quenched crystals may be attributed to simultaneous tuning of electron carriers doping and strain effect caused by lattice reduction of Sm-substitution. Project supported by the National Natural Science Foundation of China (Grant No. 11474339), the National Basic Research Program of China (Grant Nos. 2010CB923000 and 2011CBA00100), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07020100).

Evaluation the homogenisation behaviour of Sm-Fe-Nb materials by Moessbauer spectroscopy

International Nuclear Information System (INIS)

Sinan, S. A.; Muryaed, Y.; Alhweg, F. A.

2004-01-01

The microstructure of cast and annealed Sm-Fe-Nb materials were investigated by Moessbauer spectroscopy. The aim of the present work is to study the effect of Nb additions upon the microstructure of Sm 2 Fe 17 material and evaluation the homogenisation behaviour of different Sm-Fe-Nb materials. The niobium free cast material consisting of the Sm 2 Fe 17 phase and significant amounts of the free iron (α -Fe). Therefore, the homogenisation process is necessary to eliminate the free iron and produce a single Sm 2 Fe 17 phase material. This process takes long annealing time, up to seven days. The Sm 9 .5 Fe 8 7.5 Nb 3 alloy contains the lowest amount of α-Fe among, the Sm-Fe-Nb materials. Thus the homogenisation step was carried out with treatment time (12 hours) smaller than the reported annealing time of Nb-free material (Sm 2 Fe 17 ). Therefore, the addition of at 3% Nb reduces the manufacturing cost of the Sm 2 Fe 17 and makes this based material for permanent magnets, more industrially desirable, due to elimination the free iron with lowest treatment time. Also it was found that the existence of the paramagnetic NbFe 2 phase becomes higher after the homogenisation process, which can be explained due to the diffusion of Nb from Sm 2 Fe 17 phase to paramagnetic NbFe 2 phase, during the annealing process. (authors)

The SM and MIR reactors operation experience

International Nuclear Information System (INIS)

Kuprienko, V.A.; Klinov, A.V.; Svyatkin, M.N.; Shamardin, V.K.

1995-01-01

The SM and MIR operation experience show that continuous work on the problem of ageing, in all its aspects, allows for prolongation of the research plant life cycle by several folds as compared to the initial project. The redesigned SM-3 reactor will operate for another 20 years. The similar result is expected from the MIR planned reconstruction which scope will be the topic of future presentations. (orig.)

Aligned, plasma sprayed SmCo5 deposits

International Nuclear Information System (INIS)

Kumar, K.; Das, D.

1986-01-01

Highly aligned SmCo 5 deposits were produced using plasma spraying. c-axis alignment, normal to the plane of the deposit, was achieved by depositing the Sm-Co alloys on steel substrates maintained at high temperatures. The substrates were heated by the plasma flame to obtain the high temperatures. The attainment of a range of substrate temperatures was made possible through control over the geometry of the substrate

The electrodeposition of 149Sm targets for (n,α) studies

International Nuclear Information System (INIS)

Ingelbrecht, C.; Ambeck-Madsen, J.; Teipel, K.; Robouch, P.; Arana, G.; Pomme, S.

1999-01-01

A method of electrodeposition from ethanol was developed for the production of 149 Sm targets of area 50x60 mm 2 to be used for (n,α) experiments. Targets of 60 μg cm -2 Sm were obtained with a Sm yield of 50% and a Sm mass fraction of 35% after calcination of the layers at 450 deg. C. Target substrates were 20 μm aluminium foils mounted on brass frames. A water cooling jig was constructed to protect the glue used for mounting during the calcination process. The layers were characterized by inductively coupled plasma source mass spectrometry (ICP-MS) and by neutron activation analysis (NAA)

Role of SM22 in the differential regulation of phasic vs. tonic smooth muscle

Science.gov (United States)

Ali, Mehboob

2015-01-01

Preliminary proteomics studies between tonic vs. phasic smooth muscles identified three distinct protein spots identified to be those of transgelin (SM22). The latter was found to be distinctly downregulated in the internal anal sphincter (IAS) vs. rectal smooth muscle (RSM) SMC. The major focus of the present studies was to examine the differential molecular control mechanisms by SM22 in the functionality of truly tonic smooth muscle of the IAS vs. the adjoining phasic smooth muscle of the RSM. We monitored SMC lengths before and after incubation with pFLAG-SM22 (for SM22 overexpression), and SM22 small-interfering RNA. pFLAG-SM22 caused concentration-dependent and significantly greater relaxation in the IAS vs. the RSM SMCs. Conversely, temporary silencing of SM22 caused contraction in both types of the SMCs. Further studies revealed a significant reverse relationship between the levels of SM22 phosphorylation and the amount of SM22-actin binding in the IAS and RSM SMC. Data showed higher phospho-SM22 levels and decreased SM22-actin binding in the IAS, and reverse to be the case in the RSM SMCs. Experiments determining the mechanism for SM22 phosphorylation in these smooth muscles revealed that Y-27632 (Rho kinase inhibitor) but not Gö-6850 (protein kinase C inhibitor) caused concentration-dependent decreased phosphorylation of SM22. We speculate that SM22 plays an important role in the regulation of basal tone via Rho kinase-induced phosphorylation of SM22. PMID:25617350

Label swapper device for spectral amplitude coded optical packet networks monolithically integrated on InP

NARCIS (Netherlands)

Muñoz, P.; García-Olcina, R.; Habib, C.; Chen, L.R.; Leijtens, X.J.M.; Vries, de T.; Robbins, D.J.; Capmany, J.

2011-01-01

In this paper the design, fabrication and experimental characterization of an spectral amplitude coded (SAC) optical label swapper monolithically integrated on Indium Phosphide (InP) is presented. The device has a footprint of 4.8x1.5 mm2 and is able to perform label swapping operations required in

A metastable Mg11Sm phase obtained by rapid solidification

International Nuclear Information System (INIS)

Budurov, S.

1993-01-01

Molten Mg-Sm alloys with a Sm concentration of 4.93, 6.86, and 8.35 at.% were rapidly soldified with the aid of a shock wave gun device. Investigations of the obtained splats were performed with the aid of DSC, X-ray analysis, and metallography. Rapid soldification of the eutectic MgSm 8.35 alloy forms a new Im3m-type phase. (orig.)

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

Science.gov (United States)

Weinberg, I.; Rybicki, G. C.; Vargas-Aburto, C.; Jain, R. K.; Scheiman, D.

1994-01-01

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Low temperature preparation and superconductivity of F-doped SmFeAsO

Energy Technology Data Exchange (ETDEWEB)

Chen, Y.L.; Cui, Y.J. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Cheng, C.H. [School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia); Yang, Y.; Wang, L.; Li, Y.C.; Zhang, Y. [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhao, Y., E-mail: yzhao@swjtu.edu.c [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney, 2052 NSW (Australia)

2010-11-01

A low temperature (1100 deg. C) process of preparing F-doped SmFeAsO samples has been developed using SmF{sub 3} with nanometer scale as the source of fluorine. A series of the SmFeAsO{sub 1-x}F{sub x} (x = 0, 0.05, 0.1, 0.15, 0.2, 0.25, 0.3) samples have been prepared using the present method. Compared with previous reports, the present SmF{sub 3} is more effective to introduce F into SmFeAsO system in which a transition temperature of 39 K can be observed when x = 0.05. The superconductivity is definitely enhanced with the increasing F-doping level. All the samples presented to be layered structure and the crystal particle size is about three times larger with sintering time increasing from 36 h to 48 h. Except for the nanometer scale of SmF{sub 3}, the flux effect of SmF{sub 3} is recognized to be another reason for the decrease of the sintering temperature. Further more, a relatively large amount of SmF{sub 3} was also employed in the raw materials to introduce excessive F and this has induced higher T{sub c} (55 K) in SmFeAsO{sub 0.8}F{sub 0.2+{delta}}system.

The glomerular parietal epithelial cell's responses are influenced by SM22 alpha levels.

Science.gov (United States)

Naito, Shokichi; Pippin, Jeffrey W; Shankland, Stuart J

2014-11-06

Studies have shown in several diseases initially affecting podocytes, that the neighboring glomerular parietal epithelial cells (PECs) are secondarily involved. The PEC response might be reparative under certain circumstances, yet injurious under others. The factors governing these are not well understood. We have shown that SM22α, an actin-binding protein considered a marker of smooth muscle differentiation, is upregulated in podocytes and PECs in several models of podocyte disease. However, the impact of SM22α levels on PECs is not known. Experimental glomerular disease, characterized by primary podocyte injury, was induced in aged-matched SM22α+/+ and SM22α-/-mice by intraperitoneal injection of sheep anti-rabbit glomeruli antibody. Immunostaining methods were employed on days 7 and 14 of disease. The number of PEC transition cells, defined as cells co-expressing a PEC protein (PAX2) and podocyte protein (Synaptopodin) was higher in diseased SM22α-/-mice compared with SM22α+/+mice. WT1 staining along Bowman's capsule is higher in diseased SM22α-/-mice. This was accompanied by increased PEC proliferation (measured by ki-67 staining), and an increase in immunostaining for the progenitor marker NCAM, in a subpopulation of PECs in diseased SM22α-/-mice. In addition, immunostaining for vimentin and alpha smooth muscle actin, markers of epithelial-to-mesenchymal transition (EMT), was lower in diseased SM22α-/-mice compared to diseased SM22α+/+mice. SM22α levels may impact how PECs respond following a primary podocyte injury in experimental glomerular disease. Absent/lower levels favor an increase in PEC transition cells and PECs expressing a progenitor marker, and a lower EMT rate compared to SM22α+/+mice, where SM22 levels are markedly increased in PECs.

The analytical center of INP - experience of becoming prospect of development

International Nuclear Information System (INIS)

Kadyrzhanov, K.K.; Kozhakhmetov, S.K.

2004-01-01

Full text: In 2001 in INP NNC RK the Analytical center has been organized as separate structural division. The primary goal of the Analytical center is all-round use of the scientific and technical potential, which has been saved up in INP NNC RK for the organization and carrying out of researches, actual for, first of all for the domestic companies, scientific institutes and the foreign companies working in Kazakhstan. In the report data on the equipment with which the Analytical center for performance of works is equipped are resulted. For these purposes the grants of the international organizations and funds are involved. For example, about two years it is maintained universal X-ray diffractometer Brucker D8 Advance got with support of U.S. CRDF (the project *KR2-993). Under the project *KAR2-1036-AL-03 the same fund in current of 2005 delivery of the specialized equipment for test of corrosion resistance of materials will be made. The site on preparation of materials in created and equipped with the specialized equipment. In the report results, both fundamental works, and data on the applied works executed with various partners - National Atomic Company 'KazAtomProm', Ulba Metallurgical Plant, 'Tengizchevroil' Oil Company, Pharmacological Company named 'B-clay' are discussed, etc. In the report the basic directions of the further development of works and expansions of geography of cooperation are formulated