Organometallic vapor-phase epitaxy theory and practice

CERN Document Server

Stringfellow, Gerald B

1989-01-01

Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

N-MOSFETs Formed on Solid Phase Epitaxially Grown GeSn Film with Passivation by Oxygen Plasma Featuring High Mobility.

Science.gov (United States)

Fang, Yung-Chin; Chen, Kuen-Yi; Hsieh, Ching-Heng; Su, Chang-Chia; Wu, Yung-Hsien

2015-12-09

Solid phase epitaxially grown GeSn was employed as the platform to assess the eligibility of direct O2 plasma treatment on GeSn surface for passivation of GeSn N-MOSFETs. It has been confirmed that O2 plasma treatment forms a GeSnO(x) film on the surface and the GeSnO(x) topped by in situ Al2O3 constitutes the gate stack of GeSn MOS devices. The capability of the surface passivation was evidenced by the low interface trap density (D(it)) of 1.62 × 10(11) cm(-2) eV(-1), which is primarily due to the formation of Ge-O and Sn-O bonds at the surface by high density/reactivity oxygen radicals that effectively suppress dangling bonds and decrease gap states. The good D(it) not only makes tiny frequency dispersion in the characterization of GeSn MOS capacitors, but results in GeSn N-MOSFETs with outstanding peak electron mobility as high as 518 cm(2)/(V s) which outperforms other devices reported in the literature due to reduced undesirable carrier scattering. In addition, the GeSn N-MOSFETs also exhibit promising characteristics in terms of acceptable subthreshold swing of 156 mV/dec and relatively large I(ON)/I(OFF) ratio more than 4 orders. Moreover, the robust reliability in terms small V(t) variation against high field stress attests the feasibility of using the O2 plasma-treated passivation to advanced GeSn technology.

Solid phase epitaxial growth of high mobility La:BaSnO_3 thin films co-doped with interstitial hydrogen

International Nuclear Information System (INIS)

Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Moram, Michelle A.; Ide, Keisuke; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

2016-01-01

This work presents the solid phase epitaxial growth of high mobility La:BaSnO_3 thin films on SrTiO_3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO_3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm"2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO_3 thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO_3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO_3 thin films were increased to 3 × 10"1"9" cm"−"3 and in La:BaSnO_3 thin films from 6 × 10"1"9" cm"−"3 to 1.5 × 10"2"0" cm"−"3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO_3 electron effective mass of 0.27 ± 0.05 m_0 and an optical mobility of 26 ± 7 cm"2/Vs. As compared to La:BaSnO_3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO_3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

Comprehensive modeling of solid phase epitaxial growth using Lattice Kinetic Monte Carlo

International Nuclear Information System (INIS)

Martin-Bragado, Ignacio

2013-01-01

Damage evolution of irradiated silicon is, and has been, a topic of interest for the last decades for its applications to the semiconductor industry. In particular, sometimes, the damage is heavy enough to collapse the lattice and to locally amorphize the silicon, while in other cases amorphization is introduced explicitly to improve other implanted profiles. Subsequent annealing of the implanted samples heals the amorphized regions through Solid Phase Epitaxial Regrowth (SPER). SPER is a complicated process. It is anisotropic, it generates defects in the recrystallized silicon, it has a different amorphous/crystalline (A/C) roughness for each orientation, leaving pits in Si(1 1 0), and in Si(1 1 1) it produces two modes of recrystallization with different rates. The recently developed code MMonCa has been used to introduce a physically-based comprehensive model using Lattice Kinetic Monte Carlo that explains all the above singularities of silicon SPER. The model operates by having, as building blocks, the silicon lattice microconfigurations and their four twins. It detects the local configurations, assigns microscopical growth rates, and reconstructs the positions of the lattice locally with one of those building blocks. The overall results reproduce the (a) anisotropy as a result of the different growth rates, (b) localization of SPER induced defects, (c) roughness trends of the A/C interface, (d) pits on Si(1 1 0) regrown surfaces, and (e) bimodal Si(1 1 1) growth. It also provides physical insights of the nature and shape of deposited defects and how they assist in the occurrence of all the above effects

Epitaxial growth and new phase of single crystal Dy by molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, Kai-Yueh; Homma, Hitoshi; Schuller, I.K.

1987-09-01

We have grown two novel epitaxial phases of dysprosium (Dy) on vanadium (V) by molecular beam epitaxy technique. Surface and bulk structures are studied by in-situ reflection high energy electron diffraction (RHEED) and x-ray diffraction techniques. The new hcp phases are ∼4% expanded uniformly in-plane (0001), and ∼9% and ∼4% expanded out of plane along the c-axes for non-interrupted and interrupted deposition case, respectively. We also observed (2 x 2), (3 x 3), and (4 x 4) Dy surface reconstruction patterns and a series of transitions as the Dy film thickness increases. 12 refs., 3 figs

Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions

Energy Technology Data Exchange (ETDEWEB)

Wong, Wahchung; Elliman, R.G.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1993-12-31

The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.

Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions

Energy Technology Data Exchange (ETDEWEB)

Wong, Wahchung; Elliman, R G; Kringhoj, P [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1994-12-31

The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.

Epitaxial III-V nanowires on silicon for vertical devices

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

End-Member Formulation of Solid Solutions and Reactive Transport

Energy Technology Data Exchange (ETDEWEB)

Lichtner, Peter C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2015-09-01

A model for incorporating solid solutions into reactive transport equations is presented based on an end-member representation. Reactive transport equations are solved directly for the composition and bulk concentration of the solid solution. Reactions of a solid solution with an aqueous solution are formulated in terms of an overall stoichiometric reaction corresponding to a time-varying composition and exchange reactions, equivalent to reaction end-members. Reaction rates are treated kinetically using a transition state rate law for the overall reaction and a pseudo-kinetic rate law for exchange reactions. The composition of the solid solution at the onset of precipitation is assumed to correspond to the least soluble composition, equivalent to the composition at equilibrium. The stoichiometric saturation determines if the solid solution is super-saturated with respect to the aqueous solution. The method is implemented for a simple prototype batch reactor using Mathematica for a binary solid solution. Finally, the sensitivity of the results on the kinetic rate constant for a binary solid solution is investigated for reaction of an initially stoichiometric solid phase with an undersaturated aqueous solution.

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

OpenAIRE

Hongling Wei; Zhengwei Chen; Zhenping Wu; Wei Cui; Yuanqi Huang; Weihua Tang

2017-01-01

Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. Th...

N-Acyliminium Intermediates in Solid-Phase Synthesis

DEFF Research Database (Denmark)

Quement, Sebastian Thordal le; Petersen, Rico; Meldal, M.

2010-01-01

N-Acyliminium ions are powerful intermediates in synthetic organic chemistry. Examples of their use are numerous in solution-phase synthesis, but there are unmerited few reports on these highly reactive electrophiles in solid-phase synthesis. The present review covers the literature to date and i...

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

Science.gov (United States)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, β-BaZn2As2

International Nuclear Information System (INIS)

Xiao, Zewen; Ran, Fan-Yong; Hiramatsu, Hidenori; Matsuishi, Satoru; Hosono, Hideo; Kamiya, Toshio

2014-01-01

BaZn 2 As 2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic α phase and a higher-symmetry tetragonal β phase. Here, we report that high-quality epitaxial films of the tetragonal β-BaZn 2 As 2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film and the substrate were BaZn 2 As 2 (00 l)//MgO (001) and BaZn 2 As 2 [200]//MgO [200], respectively. The full-widths at half maximum were 0.082° for a 008 out-of-plane rocking curve and 0.342° for a 200 in-plane rocking curve. A step-and-terrace structure was observed by atomic force microscopy. The band gap of β-BaZn 2 As 2 was evaluated to be around 0.2 eV, which is much smaller than that of a family compound LaZnOAs (1.5 eV). Density functional theory calculation using the Heyd–Scuseria–Ernzerhof hybrid functionals supports the small band gap. - Highlights: • High-quality epitaxial β-BaZn 2 As 2 films were obtained. • The band gap of β-BaZn 2 As 2 was evaluated to around 0.2 eV. • Hybrid Heyd–Scuseria–Ernzerhof calculation supports the small band gap

Performance of a Zerovalent Iron Reactive Barrier for the Treatment of Arsenic in Groundwater: Part 2. Geochemical Modeling and Solid Phase Studies

Science.gov (United States)

Arsenic uptake processes were evaluated in a zerovalent iron reactive barrier installed at a lead smelting facility using geochemical modeling, solid-phase analysis, and X-ray absorption spectroscopy techniques. Aqueous speciation of arsenic plays a key role in directing arsenic...

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K., E-mail: tarun@rrcat.gov.in [Semiconductor Physics and Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

Epitaxial lift-off for solid-state cavity quantum electrodynamics

International Nuclear Information System (INIS)

Greuter, Lukas; Najer, Daniel; Kuhlmann, Andreas V.; Starosielec, Sebastian; Warburton, Richard J.; Valentin, Sascha R.; Ludwig, Arne; Wieck, Andreas D.

2015-01-01

We demonstrate an approach to incorporate self-assembled quantum dots into a Fabry-Pérot-like microcavity. Thereby, a 3λ/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor-mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggest that we are close to the strong coupling regime

Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

Science.gov (United States)

Radulescu, Fabian

2000-12-01

Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates

Reactivity of main components and substituent distribution in esterified sugarcane bagasse prepared by effective solid phase reaction.

Science.gov (United States)

Gan, Tao; Zhang, Yanjuan; Chen, Yane; Hu, Huayu; Yang, Mei; Huang, Zuqiang; Chen, Dong; Huang, Aimin

2018-02-01

Three main components of lignocellulose (cellulose, hemicellulose, and lignin isolated from sugarcane bagasse (SCB)) as well as holocellulose and SCB were modified with maleic acid by mechanical activation (MA)-assisted solid phase reaction (MASPR) technology. The order of reactivity was found to be lignin>hemicellulose>cellulose. The amorphous structure of lignin and hemicellulose mainly attributed to their better reactivity, and the modified lignin could reach a maximum degree of esterification (DE) of 93.45%. MA improved the accessibility and reactivity of cellulose, as the DE of modified cellulose gradually increased with milling time and reached the maximum value of 57.30% at 120min, which had significant effect on structure changes and DE of modified holocellulose and SCB. MA enhanced the esterification of all three components in lignocellulose with relatively high substituent distribution in them, and maleated SCB with a maximum DE of 64.17% was successfully prepared by this simple, green, and effective MASPR technology. Copyright © 2017 Elsevier Ltd. All rights reserved.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Science.gov (United States)

Meng, Siqin; Yue, Zhenxing; Zhang, Xiaozhi; Li, Longtu

2014-01-01

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Quasi-epitaxial barium hexaferrite thin films prepared by a topotactic reactive diffusion process

Energy Technology Data Exchange (ETDEWEB)

Meng, Siqin; Yue, Zhenxing, E-mail: yuezhx@tsinghua.edu.cn; Zhang, Xiaozhi; Li, Longtu

2014-01-30

Quasi-epitaxial barium hexaferrite thin films (BaM) with crystallographic c-axis parallel to film normal were prepared through a topotactic reactive diffusion process using two-step solution deposition on c-plane sapphire. The two-step spin coating process involves preparing an epitaxial hematite film, coating the film with barium precursor solution and thermal annealing. The crystal orientation and magnetic anisotropy of BaM thin films were investigated by X-ray diffraction analysis, SEM observation and magnetic measurements. Hysteresis loops showed good magnetic anisotropy and high remanence ratio (RR) Mr/Ms = 0.97. The films fabricated by two-step spin coating process displayed wider rocking curve width but better magnetic anisotropy than one-step spin coating. The possible mechanism of this discrepancy is discussed in this paper.

Pseudomorphic growth of organic semiconductor thin films driven by incommensurate epitaxy

International Nuclear Information System (INIS)

Sassella, A.; Campione, M.; Raimondo, L.; Borghesi, A.; Bussetti, G.; Cirilli, S.; Violante, A.; Goletti, C.; Chiaradia, P.

2009-01-01

A stable pseudomorphic phase of α-quaterthiophene, a well known organic semiconductor, is obtained by growing films with organic molecular beam epitaxy (OMBE) on a single crystal of another organic semiconductor, namely, tetracene. The structural characteristics of the new phase are investigated by monitoring in situ the OMBE process by reflectance anisotropy spectroscopy; thus assessing that incommensurate epitaxy is in this case, the driving force for tuning the molecular packing in organic molecular films and in turn, their solid state properties

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

International Nuclear Information System (INIS)

Okazaki, Sohei; Hirose, Yasushi; Nakao, Shoichiro; Yang, Chang; Harayama, Isao; Sekiba, Daiichiro; Hasegawa, Tetsuya

2014-01-01

InO x F y thin films were epitaxially grown on Y-stabilized ZrO 2 (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T S ), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T S (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T S , y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T S ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO x F y epitaxial thin films with high fluorine concentration were grown on Y:ZrO 2 . • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

OpenAIRE

Hyoungjeen Jeen; Ho Nyung Lee

2015-01-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model syste...

Vapor phase epitaxial growth of FeS sub 2 pyrite and evaluation of the carrier collection in liquid-junction solar cell

Energy Technology Data Exchange (ETDEWEB)

Ennaoui, A.; Schlichthoerl, G.; Fiechter, S.; Tributsch, H. (Hahn-Meitner-Inst., Abt. Solare Energetik und Materialforschung, Berlin (Germany))

1992-01-01

Photoactive epitaxial layers of FeS{sub 2} were grown using bromine as a transport agent and a simple closed ampoule technique. The substrates used were (100)-oriented slices of natural pyrite 1 mm thick. A vapor-liquid-solid (VLS) growth mechanism was elucidated by means of optical microscopy. Macrosteps, terrace surfaces and protuberances are often accompanied with the presence of liquid FeBr{sub 3} droplets. In the absence of a liquid phase growth hillocks are found. Localized photovoltaic response for the evaluation of carrier collection using a scanning laser spot system has been used to effectively locate and characterize non-uniformities present in the epitaxial thin films. (orig.).

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Lee, J. H.; Ke, X.; Misra, R.; Schiffer, P.; Ihlefeld, J. F.; Mei, Z. G.; Liu, Z. K.; Xu, X. S.; Musfeldt, J. L.; Heeg, T.; Schlom, D. G.; Roeckerath, M.; Schubert, J.

2010-01-01

We have developed the means to grow BiMnO 3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO 3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003 deg. ). Optical absorption measurements reveal that BiMnO 3 has a direct band gap of 1.1±0.1 eV.

Growth of pseudomorphic structures through organic epitaxy

International Nuclear Information System (INIS)

Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

2012-01-01

The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor α-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

The mechanism of reequilibration of solids in the presence of a fluid phase

International Nuclear Information System (INIS)

Putnis, Andrew; Putnis, Christine V.

2007-01-01

The preservation of morphology (pseudomorphism) and crystal structure during the transformation of one solid phase to another is regularly used as a criterion for a solid-state mechanism, even when there is a fluid phase present. However, a coupled dissolution-reprecipitation mechanism also preserves the morphology and transfers crystallographic information from parent to product by epitaxial nucleation. The generation of porosity in the product phase is a necessary condition for such a mechanism as it allows fluid to maintain contact with a reaction interface which moves through the parent phase from the original surface. We propose that interface-coupled dissolution-reprecipitation is a general mechanism for reequilibration of solids in the presence of a fluid phase. - Graphical abstract: A single crystal of KBr is transformed to a porous single crystal of KCl by immersion in saturated KCl solution. The image shows partial transformation of a crystal of KBr (core) to KCl (porous, milky rim) by an interface coupled dissolution-reprecipitation mechanism. The external dimensions and crystallographic orientation of the original crystal are preserved, while a reaction interface moves through the crystal

New phenomena in epitaxial growth: solid films on quasicrystalline substrates

International Nuclear Information System (INIS)

Fournee, V; Thiel, P A

2005-01-01

An overview is given of the research conducted in the field of solid film growth on quasiperiodic surfaces. An atomistic description of quasicrystalline surfaces is presented and discussed in relation to bulk structural models. The various systems for which thin film growth has been attempted so far are reviewed. Emphasis is placed on the nucleation mechanisms of the solid films, on their growth modes in relation to the nature of the deposited metals, on the possibility of intermixing or alloying at the interface and on the epitaxial relationships at the crystal-quasicrystal interfaces. We also describe situations where the deposited elements adopt a quasiperiodic structure, which opens up the possibility of extending our understanding of the relation between quasiperiodicity and the physical properties of such structurally and chemically complex solids. (topical review)

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

Directory of Open Access Journals (Sweden)

C. C. Fan

2017-08-01

Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

Abstracts of 4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology

International Nuclear Information System (INIS)

2001-01-01

4. International Workshop on Molecular Beam Epitaxy and Vapour Phase Epitaxy Growth Physics and Technology is the periodically held forum for discussion the problems connected with manufacturing of different nanostructures (thin films, quantum wells, quantum dots) needed in microelectronics. Preparation of such materials with desirable optical, electrical and magnetic properties being determined by their chemical composition and crystal structure has been discussed in detail during the workshop sessions. Optimization of crystal growth methods such as VPE and MBE from the view point of obtained material properties has also been extensively discussed

Heterogeneous Two-Phase Pillars in Epitaxial NiFe ₂ O ₄ -LaFeO ₃ Nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Comes, Ryan B. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA; Department of Physics, Auburn University, Auburn AL 36849 USA; Perea, Daniel E. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland WA 99352 USA; Spurgeon, Steven R. [Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland WA 99352 USA

2017-07-10

Self-assembled epitaxial oxide nanocomposites have been explored for a wide range of applications, including multiferroic and magnetoelectric properties, plasmonics, and catalysis. These so-called “vertically aligned nanocomposites” form spontaneously during the deposition process when segregation into two phases is energetically favorable as compared to a solid solution. However, there has been surprisingly little work understanding the driving forces that govern the synthesis of these materials, which can include point defect energetics, surface diffusion, and interfacial energies. To explore these factors, La-Ni-Fe-O films have been synthesized by molecular beam epitaxy and it is shown that these phase segregate into spinel-perovskite nanocomposites. Using complementary scanning transmission electron microscopy and atom-probe tomography, the elemental composition of each phase is examined and found that Ni ions are exclusively found in the spinel phase. From correlative analysis, a model for the relative favorability of the Ni2+ and Ni3+ valences under the growth conditions is developed. It is shown that multidimensional characterization techniques provide previously unobserved insight into the growth process and complex driving forces for phase segregation.

Epitaxial growth of indium oxyfluoride thin films by reactive pulsed laser deposition: Structural change induced by fluorine insertion into vacancy sites in bixbyite structure

Energy Technology Data Exchange (ETDEWEB)

Okazaki, Sohei [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Yang, Chang [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [Tandem Accelerator Complex, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8577 (Japan); Hasegawa, Tetsuya [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-30

InO{sub x}F{sub y} thin films were epitaxially grown on Y-stabilized ZrO{sub 2} (111) substrates by reactive pulsed laser deposition. By changing the substrate temperature (T{sub S}), we were able to control the fluorine content of the film. Phase-pure epitaxial thin films with bixbyite-like ordering in the anion-site occupancy were obtained at high T{sub S} (≥ 240 °C), where fluorine was inserted into the vacancy sites in the bixbyite lattice up to y / (x + y) ∼ 0.3. By decreasing T{sub S}, y / (x + y) increased and the bixbyite-like ordering disappeared; simultaneously, fluorine-rich and fluorine-poor subphases emerged. The films grown at T{sub S} ≤ 150 °C were amorphous and exhibited higher optical absorbance and electrical resistivity than the epitaxial films. - Highlights: • InO{sub x}F{sub y} epitaxial thin films with high fluorine concentration were grown on Y:ZrO{sub 2}. • Anion composition and structural, optical and transport properties were studied. • Fluorine is topotactically inserted into the oxygen vacancy sites in bixbyite cell. • Bixbyite-like ordering of the anion site occupancy was conserved in y / (x + y) ≤ ∼ 0.3.

Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Science.gov (United States)

Wang, Xue; Hartmann, Jana; Mandl, Martin; Sadat Mohajerani, Matin; Wehmann, Hergo-H.; Strassburg, Martin; Waag, Andreas

2014-04-01

Three-dimensional GaN columns recently have attracted a lot of attention as the potential basis for core-shell light emitting diodes for future solid state lighting. In this study, the fundamental insights into growth kinetics and mass transport mechanisms of N-polar GaN columns during selective area metal organic vapor phase epitaxy on patterned SiOx/sapphire templates are systematically investigated using various pitch of apertures, growth time, and silane flow. Species impingement fluxes on the top surface of columns Jtop and on their sidewall Jsw, as well as, the diffusion flux from the substrate Jsub contribute to the growth of the GaN columns. The vertical and lateral growth rates devoted by Jtop, Jsw and Jsub are estimated quantitatively. The diffusion length of species on the SiOx mask surface λsub as well as on the sidewall surfaces of the 3D columns λsw are determined. The influences of silane on the growth kinetics are discussed. A growth model is developed for this selective area metal organic vapor phase epitaxy processing.

Immunochemical cross-reactivity between albumin and solid-phase adsorbed histamine

DEFF Research Database (Denmark)

Poulsen, L K; Nolte, H; Søndergaard, I

1990-01-01

For production of an antibody against histamine, this was coupled to human serum albumin (HSA) and used for immunization of rabbits. To test the antiserum, an immunoradiometric assay was developed comprising solid-phase bound histamine, antisera and radiolabelled protein A. Titration and inhibition...

Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

International Nuclear Information System (INIS)

Hara, Shuhei; Tanaka, Yuki; Fukaya, Takumi; Matsumoto, Satoru; Suzuki, Toshiharu; Fuse, Genshu; Kudo, Toshio; Sakuragi, Susumu

2008-01-01

A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10 14 /cm 2 . Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10 15 /cm 2 . Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm 2 and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.

Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

Science.gov (United States)

Zhu, Zhongyunshen; Song, Yuxin; Zhang, Zhenpu; Sun, Hao; Han, Yi; Li, Yaoyao; Zhang, Liyao; Xue, Zhongying; Di, Zengfeng; Wang, Shumin

2017-09-01

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ˜180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ˜180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties

KAUST Repository

Mi, Wenbo; Guo, Zaibing; Feng, X. P.; Bai, Haili

2013-01-01

Epitaxial γ′-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray θ-2θ and φ scans, pole figures and high-resolution transmission electron microscopy. The film surface

Solid phase radioimmunoassays

International Nuclear Information System (INIS)

Wide, L.

1977-01-01

Solid phase coupled antibodies were introduced to facilitate the separation of bound and free labelled ligand in the competitive inhibition radioimmunoassay. Originally, the solid matrix used was in the form of small particles and since then a number of different matrices have been used such as very fine powder particles, gels, paper and plastic discs, magnetic particles and the inside surface of plastic tubes. The coupling of antibodies may be that of a covalent chemical binding, a strong physical adsorbtion, or an immunological binding to a solid phase coupled antigen. New principles of radioimmunoassay such as the solid phase sandwich techniques and the immunoradiometric assay were developped from the use of solid phase coupled antigens and antibodies. The solid phase sandwich techniques are reagent excess methods with a very wide applicability. Several of the different variants of solid phase techniques are suitable for automation. Advantages and disadvantages of solid phase radioimmunoassays when compared with those using soluble reagents are discussed. (orig.) [de

Modeling and Analysis of a Three-Phase Solid-State Var ...

African Journals Online (AJOL)

Modeling and Analysis of a Three-Phase Solid-State Var Compensator (SSVC) ... Nigerian Journal of Technology. Journal Home ... The problems associated with the flow of reactive power in transmission and distribution lines are well known.

Effect of extrapolation length on the phase transformation of epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Hu, Z.S.; Tang, M.H.; Wang, J.B.; Zheng, X.J.; Zhou, Y.C.

2008-01-01

Effects of extrapolation length on the phase transformation of epitaxial ferroelectric thin films on dissimilar cubic substrates have been studied on the basis of the mean-field Landau-Ginzburg-Devonshire (LGD) thermodynamic theory by taking an uneven distribution of the interior stress with thickness into account. It was found that the polarization of epitaxial ferroelectric thin films is strongly dependent on the extrapolation length of films. The physical origin of the extrapolation length during the phase transformation from paraelectric to ferroelectric was revealed in the case of ferroelectric thin films

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

KAUST Repository

Duan, X. F.; Mi, Wenbo; Guo, Zaibing; Bai, Haili

2013-01-01

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation

Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

International Nuclear Information System (INIS)

Shayduk, Roman

2010-01-01

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

Science.gov (United States)

Jeen, Hyoungjeen; Lee, Ho Nyung

2015-12-01

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Structural evolution of epitaxial SrCoOx films near topotactic phase transition

Directory of Open Access Journals (Sweden)

Hyoungjeen Jeen

2015-12-01

Full Text Available Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoOx epitaxially grown by pulsed laser epitaxy (PLE as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO2.5 thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO3-δ. We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Epitaxial growth of Ge-Sb-Te based phase change materials

International Nuclear Information System (INIS)

Perumal, Karthick

2013-01-01

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb 2 Te 3 thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb 2 Te 3 to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

As-free pnictide LaNi{sub 1-x}Sb{sub 2} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

2012-07-01

We use reactive molecular beam epitaxy (RMBE) as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaNi{sub 1-x}Sb{sub 2} were grown on (100)MgO substrates from elemental sources by simultaneous evaporation of high purity La, Ni and Sb metals by e-gun. The LaNi{sub 1-x}Sb{sub 2} thin films grow epitaxially and are (00l) oriented with high crystalline quality, as evident from RHEED and X-Ray diffraction studies. The Ni deficient LaNi{sub 1-x}Sb{sub 2} thin films show metallic behavior with a room temperature resistivity of 110 {mu}{Omega} cm, while the stoichiometric compound is a semiconductor/insulator. The isostructural compound with Bi as pnictide shows a superconducting transition with a T{sub C}(0) of 3.1 K.

Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

International Nuclear Information System (INIS)

Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

2005-01-01

The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

Liquid phase electro epitaxy growth kinetics of GaAs-A three-dimensional numerical simulation study

International Nuclear Information System (INIS)

Mouleeswaran, D.; Dhanasekaran, R.

2006-01-01

A three-dimensional numerical simulation study for the liquid phase electro epitaxial growth kinetic of GaAs is presented. The kinetic model is constructed considering (i) the diffusive and convective mass transport, (ii) the heat transfer due to thermoelectric effects such as Peltier effect, Joule effect and Thomson effect, (iii) the electric current distribution with electromigration and (iv) the fluid flow coupled with concentration and temperature fields. The simulations are performed for two configurations namely (i) epitaxial growth from the arsenic saturated gallium rich growth solution, i.e., limited solution model and (ii) epitaxial growth from the arsenic saturated gallium rich growth solution with polycrystalline GaAs feed. The governing equations of liquid phase electro epitaxy are solved numerically with appropriate initial and boundary conditions using the central difference method. Simulations are performed to determine the following, a concentration profiles of solute atoms (As) in the Ga-rich growth solution, shape of the substrate evolution, the growth rate of the GaAs epitaxial film, the contributions of Peltier effect and electromigration of solute atoms to the growth with various experimental growth conditions. The growth rate is found to increase with increasing growth temperature and applied current density. The results are discussed in detail

Composition tailoring in the Ce-doped multicomponent garnet epitaxial film scintillators

Czech Academy of Sciences Publication Activity Database

Průša, Petr; Kučera, M.; Mareš, Jiří A.; Onderišinová, Z.; Hanuš, M.; Babin, Vladimir; Beitlerová, Alena; Nikl, Martin

2015-01-01

Roč. 15, č. 8 (2015), s. 3715-3723 ISSN 1528-7483 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillation * liquid phase epitaxy * photoelectron yield * Ce 3+ * multicomponent garnet Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.425, year: 2015

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

OpenAIRE

Lei, Qingyu; Golalikhani, Maryam; Davidson, Bruce A.; Liu, Guozhen; Schlom, D. G.; Qiao, Qiao; Zhu, Yimei; Chandrasena, Ravini U.; Yang, Weibing; Gray, Alexander X.; Arenholz, Elke; Farrar, Andrew K.; Tenne, Dmitri A.; Hu, Minhui; Guo, Jiandong

2016-01-01

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art...

Growth of high purity semiconductor epitaxial layers by liquid phase ...

Indian Academy of Sciences (India)

Unknown

semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

KAUST Repository

Duan, X. F.

2013-01-08

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Molecular beam epitaxy of GeTe-Sb{sub 2}Te{sub 3} phase change materials studied by X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Shayduk, Roman

2010-05-20

The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

Epitaxial growth of Ge-Sb-Te based phase change materials

Energy Technology Data Exchange (ETDEWEB)

Perumal, Karthick

2013-07-30

Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

Liquid phase epitaxy of gallium arsenide - a review

International Nuclear Information System (INIS)

Alexiev, D.; Edmondson, M.; Butcher, K.S.A.; Tansley, T.

1992-07-01

Liquid phase epitaxy of gallium arsenide has been investigated intensively from the late 1960's to the present and has now a special place in the manufacture of wide band, compound semiconductor radiation detectors. Although this particular process appears to have gained prominence in the last three decades, the authors point out that its origins reach back to 1836 when Frankenheim made his first observations. A brief review is presented from a semiconductor applications point of view on how this subject developed. 70 refs., 5 figs

Spatially Resolved Quantification of the Surface Reactivity of Solid Catalysts.

Science.gov (United States)

Huang, Bing; Xiao, Li; Lu, Juntao; Zhuang, Lin

2016-05-17

A new property is reported that accurately quantifies and spatially describes the chemical reactivity of solid surfaces. The core idea is to create a reactivity weight function peaking at the Fermi level, thereby determining a weighted summation of the density of states of a solid surface. When such a weight function is defined as the derivative of the Fermi-Dirac distribution function at a certain non-zero temperature, the resulting property is the finite-temperature chemical softness, termed Fermi softness (SF ), which turns out to be an accurate descriptor of the surface reactivity. The spatial image of SF maps the reactive domain of a heterogeneous surface and even portrays morphological details of the reactive sites. SF analyses reveal that the reactive zones on a Pt3 Y(111) surface are the platinum sites rather than the seemingly active yttrium sites, and the reactivity of the S-dimer edge of MoS2 is spatially anisotropic. Our finding is of fundamental and technological significance to heterogeneous catalysis and industrial processes demanding rational design of solid catalysts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

Science.gov (United States)

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Liquid epitaxy of Gasub(1-x)Alsub(x)Sb varizone structures

International Nuclear Information System (INIS)

Dedegkaev, T.T.; Kryukov, I.I.; Lidejkis, T.P.; Tsarenkov, B.V.; Yakovlev, Yu.P.

1980-01-01

To produce Gasub (1-x)Alsub(x)Sb varizon structures with preset limits for the change of the width of Eg forbidden zone and preset Eg gradient value and sign, epitaxy growth from the liquid phase of solid solutions of GaSb-AlSb system was investigated. The epitaxy was realized in two ways: by cooling the saturated solution of Ga-Al-Sb melt and using the isometric contineous mixing of two solution-melts with different Al content. As a result it was ascertained that: 1 the epitaxy by cooling a solution-melt permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures only with small Eg gradients (<=30eV/cm); 2 the epitaxy by contineously mixing the solution-melts permitted to produce Gasub(1-x)Alsub(x)Sb varizon structures with increasing and decreasing Eg in the direction of layer growth in the whole interval of compositions. Eg gradient can be as great as thousands of eV/cm

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency

Energy Technology Data Exchange (ETDEWEB)

Cerio, Frank

2013-09-14

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm{sup 2} using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance

Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

Directory of Open Access Journals (Sweden)

Hongling Wei

2017-11-01

Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

Structural evolution of epitaxial SrCoO{sub x} films near topotactic phase transition

Energy Technology Data Exchange (ETDEWEB)

Jeen, Hyoungjeen [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Department of Physics, Pusan National University, Busan, 609735 (Korea, Republic of); Lee, Ho Nyung, E-mail: hnlee@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

2015-12-15

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoO{sub x}) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO{sub 2.5} thin films and performed post-annealing at various temperatures for topotactic conversion into the perovskite phase (SrCoO{sub 3-δ}). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Nevertheless, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.

Spin Filtering in Epitaxial Spinel Films with Nanoscale Phase Separation

KAUST Repository

Li, Peng

2017-05-08

The coexistence of ferromagnetic metallic phase and antiferromagnetic insulating phase in nanoscaled inhomogeneous perovskite oxides accounts for the colossal magnetoresistance. Although the model of spin-polarized electron transport across antiphase boundaries has been commonly employed to account for large magnetoresistance (MR) in ferrites, the magnetic anomalies, the two magnetic phases and enhanced molecular moment, are still unresolved. We observed a sizable MR in epitaxial spinel films (NiCo2O4-δ) that is much larger than that commonly observed in spinel ferrites. Detailed analysis reveals that this MR can be attributed to phase separation, in which the perfect ferrimagnetic metallic phase and ferrimagnetic insulating phase coexist. The magnetic insulating phase plays an important role in spin filtering in these phase separated spinel oxides, leading to a sizable MR effect. A spin filtering model based on Zeeman effect and direct tunneling is developed to account for MR of the phase separated films.

Superconducting thin films of As-free pnictide LaPd{sub 1-x}Sb{sub 2} grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Retzlaff, Reiner; Buckow, Alexander; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, Petersenstr. 23, 64287 Darmstadt (Germany)

2013-07-01

We use reactive molecular beam epitaxy as synthesis technique for the search of arsenic free pnictide superconductors. Epitaxial thin films of LaPd{sub 1-x}Sb{sub 2} were grown on (100) MgO substrates from elemental sources by simultaneous evaporation of high purity La, Pd and Sb metals by e-gun. LaPd{sub 1-x}Sb{sub 2} belongs to a novel class of pnictide superconductors with a peculiar pnictide square net layer. Previously, we have reported epitaxial growth of isostructural Bi based compounds. The substitution of Bi by Sb leads to thin films with metallic behavior and room temperature resistivity of about 85 μΩ cm. The highest observed transition temperature T{sub c} inLaPd{sub 1-x}Sb{sub 2} is 3.1 K and does not depend on x. We discuss strategies to increase T{sub c} in this pnictide subfamily.

Surface passivation of liquid phase epitaxial GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.; Mo, L.; Edmondson, M.

1995-10-01

Passivation of the liquid phase epitaxial GaAs surface was attempted using aqueous P 2 S 5 -NH 4 OH, (NH 4 ) 2 S x and plasma nitrogenation and hydrogenation. Results indicate that plasma nitrogenation with pretreatment of plasma hydrogenation produced consistent reduction in reverse leakage current at room temperature for all p and n type Schottky diodes. Some diodes showed an order of magnitude improvement in current density. (NH 4 ) 2 S x passivation also results in improved I-V characteristics, though the long term stability of this passivation is questionable. 26 refs., 6 figs

Crystal phase-based epitaxial growth of hybrid noble metal nanostructures on 4H/fcc Au nanowires

Science.gov (United States)

Lu, Qipeng; Wang, An-Liang; Gong, Yue; Hao, Wei; Cheng, Hongfei; Chen, Junze; Li, Bing; Yang, Nailiang; Niu, Wenxin; Wang, Jie; Yu, Yifu; Zhang, Xiao; Chen, Ye; Fan, Zhanxi; Wu, Xue-Jun; Chen, Jinping; Luo, Jun; Li, Shuzhou; Gu, Lin; Zhang, Hua

2018-03-01

Crystal-phase engineering offers opportunities for the rational design and synthesis of noble metal nanomaterials with unusual crystal phases that normally do not exist in bulk materials. However, it remains a challenge to use these materials as seeds to construct heterometallic nanostructures with desired crystal phases and morphologies for promising applications such as catalysis. Here, we report a strategy for the synthesis of binary and ternary hybrid noble metal nanostructures. Our synthesized crystal-phase heterostructured 4H/fcc Au nanowires enable the epitaxial growth of Ru nanorods on the 4H phase and fcc-twin boundary in Au nanowires, resulting in hybrid Au-Ru nanowires. Moreover, the method can be extended to the epitaxial growth of Rh, Ru-Rh and Ru-Pt nanorods on the 4H/fcc Au nanowires to form unique hybrid nanowires. Importantly, the Au-Ru hybrid nanowires with tunable compositions exhibit excellent electrocatalytic performance towards the hydrogen evolution reaction in alkaline media.

Synthesis of high-oxidation Y-Ba-Cu-O phases in superoxygenated thin films

Science.gov (United States)

Zhang, H.; Gauquelin, N.; McMahon, C.; Hawthorn, D. G.; Botton, G. A.; Wei, J. Y. T.

2018-03-01

It is known that solid-state reaction in high-pressure oxygen can stabilize high-oxidation phases of Y-Ba-Cu-O superconductors in powder form. We extend this superoxygenation concept of synthesis to thin films which, due to their large surface-to-volume ratio, are more reactive thermodynamically. Epitaxial thin films of YBa2Cu3O7 -δ grown by pulsed laser deposition are annealed at up to 700 atm O2 and 900 ∘C , in conjunction with Cu enrichment by solid-state diffusion. The films show the clear formation of Y2Ba4Cu7O15 -δ and Y2Ba4Cu8O16 as well as regions of YBa2Cu5O9 -δ and YBa2Cu6O10 -δ phases, according to scanning transmission electron microscopy, x-ray diffraction, and x-ray absorption spectroscopy. Similarly annealed YBa2Cu3O7 -δ powders show no phase conversion. Our results demonstrate a route of synthesis towards discovering more complex phases of cuprates and other superconducting oxides.

Phase behavior and reactive transport of partial melt in heterogeneous mantle model

Science.gov (United States)

Jordan, J.; Hesse, M. A.

2013-12-01

The reactive transport of partial melt is the key process that leads to the chemical and physical differentiation of terrestrial planets and smaller celestial bodies. The essential role of the lithological heterogeneities during partial melting of the mantle is increasingly recognized. How far can enriched melts propagate while interacting with the ambient mantle? Can the melt flow emanating from a fertile heterogeneity be localized through a reactive infiltration feedback in a model without exogenous factors or contrived initial conditions? A full understanding of the role of heterogeneities requires reactive melt transport models that account for the phase behavior of major elements. Previous work on reactive transport in the mantle focuses on trace element partitioning; we present the first nonlinear chromatographic analysis of reactive melt transport in systems with binary solid solution. Our analysis shows that reactive melt transport in systems with binary solid solution leads to the formation of two separate reaction fronts: a slow melting/freezing front along which enthalpy change is dominant and a fast dissolution/precipitation front along which compositional changes are dominated by an ion-exchange process over enthalpy change. An intermediate state forms between these two fronts with a bulk-rock composition and enthalpy that are not necessarily bounded by the bulk-rock composition and enthalpy of either the enriched heterogeneity or the depleted ambient mantle. The formation of this intermediate state makes it difficult to anticipate the porosity changes and hence the stability of reaction fronts. Therefore, we develop a graphical representation for the solution that allows identification of the intermediate state by inspection, for all possible bulk-rock compositions and enthalpies of the heterogeneity and the ambient mantle. We apply the analysis to the partial melting of an enriched heterogeneity. This leads to the formation of moving precipitation

In-situ transmission electron microscopy of the solid-phase epitaxial growth of GaAs: sample preparation and artifact characterization

International Nuclear Information System (INIS)

Llewellyn, D.J.; Llewellyn, D.J.; Belay, K.B.; Ridgway, M.C.

1998-01-01

In-situ transmission electron microscopy (TEM) has been used to characterize the solid phase epitaxial growth of amorphized GaAs at a temperature of 260 deg C. To maximize heat transfer from the heated holder to the sample and minimize electron-irradiation induced artifacts, non-conventional methodologies were utilized for the preparation of cross-sectional samples. GaAs 3x1 mm rectangular wafers were cleaved then glued face-to-face to form a wafer stack size of 3x3 mm while maintaining the TEM region at the center. This stack was subsequently polished on the cross-section to a thickness of ∼ 200 μm. A 3 mm disc was then cut perpendicular to the cross-section using a Gatan ultrasonic cutter. The disc was polished then dimpled on both sides to a thickness of ∼ 15 μm. This was ion-beam milled at liquid nitrogen temperature to an electron-transparent layer. From a comparison of in-situ and ex-situ measurements of the recrystallization rate, the actual sample temperature during in-situ characterization was estimated to deviate by ≤ 20 deg C from that of the heated holder. The influence of electron-irradiation was found to be negligible by comparing the recrystallization rate and microstructure of irradiated and unirradiated regions of comparable thickness. Similarly, the influence of the 'thin-foil effect' was found to be negligible by comparing the recrystallization rate and microstructure of thick and thin regions, the former determined after the removal of the sample from the microscope and further ion-beam milling of tens of microns of material. In conclusion, the potential influence of artifacts during in-situ TEM can be minimized by the appropriate choice of sample preparation procedures. (authors)

Modification of Soil Solid Aluminium Phases During an Extreme Experimental Acidification of A Horizons of Forest Soils from Southwest Europe

International Nuclear Information System (INIS)

Novoa-Munoz, J. C.; Garcia-Rodeja Gayoso, E.

2007-01-01

Four umbric A horizons from acid forest soils were acidified in a batch type experiment and its effect in the Al pools of the solid phase analysed by means of selective dissolution methods. The results showed that Al release accounted for the consumption of 85-99% of the added protons, and causes a decrease of 2-33% of the 'reactive' Al pool of the soil solid phase. In these A horizons, inorganic non-crystalline Al and high stability Al-humus complexes are the main sources of the dissolved Al. The contribution of the complexes with intermediate stability only was relevant in the more acid horizon developed from phyllites (P18-A). The increase of equilibration time from 96 to 720 h did not caused significant differences in the decrease of the 'reactive' Al pool suggesting the acid neutralising reactions occurred in less than 96 h. In most cases the quantity of released Al is in agreement with the decrease of the different reactive Al pools of the solid phase

Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

International Nuclear Information System (INIS)

Adekoya, O.A.

1987-06-01

Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

International Nuclear Information System (INIS)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah; Patriarche, Gilles; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Heer, Walt A. de; Berger, Claire

2016-01-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

Energy Technology Data Exchange (ETDEWEB)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

2016-03-07

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Dielectric relaxation in epitaxial films of paraelectric-magnetic SrTiO.sub.3./sub.-SrMnO.sub.3./sub. solid solution

Czech Academy of Sciences Publication Activity Database

Savinov, Maxim; Bovtun, Viktor; Tereshina-Chitrova, Evgenia; Stupakov, Alexandr; Dejneka, Alexandr; Tyunina, Marina

2018-01-01

Roč. 112, č. 5 (2018), s. 1-4, č. článku 052901. ISSN 0003-6951 R&D Projects: GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : dielectric relaxation * epitaxial films * paraelectric-magnetic * SrTiO 3 -SrMnO 3 solid solution Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.) Impact factor: 3.411, year: 2016

Thin film phase diagram of iron nitrides grown by molecular beam epitaxy

Science.gov (United States)

Gölden, D.; Hildebrandt, E.; Alff, L.

2017-01-01

A low-temperature thin film phase diagram of the iron nitride system is established for the case of thin films grown by molecular beam epitaxy and nitrided by a nitrogen radical source. A fine-tuning of the nitridation conditions allows for growth of α ‧ -Fe8Nx with increasing c / a -ratio and magnetic anisotropy with increasing x until almost phase pure α ‧ -Fe8N1 thin films are obtained. A further increase of nitrogen content below the phase decomposition temperature of α ‧ -Fe8N (180 °C) leads to a mixture of several phases that is also affected by the choice of substrate material and symmetry. At higher temperatures (350 °C), phase pure γ ‧ -Fe4N is the most stable phase.

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

2016-01-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

2009-07-01

Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

Formation of (111) orientation-controlled ferroelectric orthorhombic HfO{sub 2} thin films from solid phase via annealing

Energy Technology Data Exchange (ETDEWEB)

Mimura, Takanori; Katayama, Kiliha [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Shimizu, Takao [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Uchida, Hiroshi [Department of Materials and Life Sciences, Sophia University, Tokyo 102-8554 (Japan); Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J. [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Sakata, Osami [Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Funakubo, Hiroshi, E-mail: funakubo.h.aa@m.titech.ac.jp [Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502 (Japan)

2016-08-01

0.07YO{sub 1.5}-0.93HfO{sub 2} (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In{sub 2}O{sub 3}(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates, and (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ–2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiO{sub x}/SiO{sub 2}/(001)Si substrate, which does not contain ITO. Polarization–hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (P{sub r}) of 9.6 and 10.8 μC/cm{sup 2} and coercive fields (E{sub c}) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

Method for reactivating solid catalysts used in alkylation reactions

Science.gov (United States)

Ginosar, Daniel M.; Thompson, David N.; Coates, Kyle; Zalewski, David J.; Fox, Robert V.

2003-06-17

A method for reactivating a solid alkylation catalyst is provided which can be performed within a reactor that contains the alkylation catalyst or outside the reactor. Effective catalyst reactivation is achieved whether the catalyst is completely deactivated or partially deactivated. A fluid reactivating agent is employed to dissolve catalyst fouling agents and also to react with such agents and carry away the reaction products. The deactivated catalyst is contacted with the fluid reactivating agent under pressure and temperature conditions such that the fluid reactivating agent is dense enough to effectively dissolve the fouling agents and any reaction products of the fouling agents and the reactivating agent. Useful pressures and temperatures for reactivation include near-critical, critical, and supercritical pressures and temperatures for the reactivating agent. The fluid reactivating agent can include, for example, a branched paraffin containing at least one tertiary carbon atom, or a compound that can be isomerized to a molecule containing at least one tertiary carbon atom.

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

International Nuclear Information System (INIS)

Braic, M.; Zoita, N.C.; Danila, M.; Grigorescu, C.E.A.; Logofatu, C.

2015-01-01

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH 4 . The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC 0.84 thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH 4 . • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed

Hetero-epitaxial growth of TiC films on MgO(001) at 100 °C by DC reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Braic, M. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Zoita, N.C., E-mail: cnzoita@inoe.ro [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Danila, M. [National Institute for Research and Development in Microtechnology, 126A Erou Iancu Nicolae Blvd., 077190 Bucharest (Romania); Grigorescu, C.E.A. [National Institute for Optoelectronics, 409 Atomistilor St., 077125 Magurele (Romania); Logofatu, C. [National Institute of Materials Physics, 105 bis Atomistilor St., 077125 Magurele (Romania)

2015-08-31

Hetero-epitaxial TiC thin films were deposited at 100 °C on MgO(001) by DC reactive magnetron sputtering in a mixture of Ar and CH{sub 4}. The 62 nm thick films were analyzed for elemental composition and chemical bonding by Auger electron spectroscopy, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The crystallographic structure investigation by high resolution X-ray diffraction revealed that the films consist of two layers: an interface partially strained epilayer with high crystalline quality, and a relaxed layer, formed by columnar grains, maintaining the epitaxial relationship with the substrate. The films presented smooth surfaces (RMS roughness ~ 0.55 nm), with circular equi-sized grains/crystallites, as observed by atomic force microscopy. The Hall measurements in Van der Pauw geometry revealed relatively high resistivity value ~ 620 μΩ cm, ascribed to electron scattering on interfaces, on grain boundaries and on different defects/dislocations. - Highlights: • Hetero-epitaxial TiC{sub 0.84} thin films were grown on MgO(001) at 100 °C by magnetron sputtering. • 62 nm thick films were synthesized by magnetron sputtering, using Ti, Ar and CH{sub 4}. • The film comprises a partially strained interface epilayer and a relaxed top layer. • Both layers preserve the epitaxial relationship with the substrate. • Low RMS surface roughness ~ 0.55 nm and grains with mean lateral size of ~ 38.5 nm were observed.

Growth of CrTe thin films by molecular-beam epitaxy

International Nuclear Information System (INIS)

Sreenivasan, M.G.; Hou, X.J.; Teo, K.L.; Jalil, M.B.A.; Liew, T.; Chong, T.C.

2006-01-01

We report the growth of Cr 1-δ Te films on (100) GaAs substrates using ZnTe buffer layers by solid-source molecular-beam epitaxial technique. RHEED patterns indicate a clear structural change during the initial stages of deposition. Temperature-dependent magnetization results reveal that different NiAs-related phases of Cr 1-δ Te can be obtained at different substrate temperatures. By varying the film thickness, a metastable zinc blende structure of CrTe could be obtained at lower substrate temperature

Some issues for blast from a structural reactive material solid

Science.gov (United States)

Zhang, F.

2018-03-01

Structural reactive material (SRM) is consolidated from a mixture of micro- or nanometric reactive metals and metal compounds to the mixture theoretical maximum density. An SRM can thus possess a higher energy density, relying on various exothermic reactions, and higher mechanical strength and heat resistance than that of conventional CHNO explosives. Progress in SRM solid studies is reviewed specifically as an energy source for air blast through the reaction of fine SRM fragments under explosive loading. This includes a baseline SRM solid explosion characterization, material properties of an SRM solid, and its dynamic fine fragmentation mechanisms and fragment reaction mechanisms. The overview is portrayed mainly from the author's own experimental studies combined with theoretical and numerical explanation. These advances have laid down some fundamentals for the next stage of developments.

Rod-like β-FeSi2 phase grown on Si (111) substrate

International Nuclear Information System (INIS)

Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

2004-01-01

Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

Epitaxial lateral overgrowth - a tool for dislocation blockade in multilayer system

International Nuclear Information System (INIS)

Zytkiewicz, Z.R.

1998-01-01

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case od GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metalorganic vapour phase epitaxy will be underlined. (author)

Epitaxial growth of hybrid nanostructures

Science.gov (United States)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

Solid-solid phase transitions in Fe nanowires induced by axial strain

International Nuclear Information System (INIS)

Sandoval, Luis; Urbassek, Herbert M

2009-01-01

By means of classical molecular-dynamics simulations we investigate the solid-solid phase transition from a bcc to a close-packed crystal structure in cylindrical iron nanowires, induced by axial strain. The interatomic potential employed has been shown to be capable of describing the martensite-austenite phase transition in iron. We study the stress versus strain curves for different temperatures and show that for a range of temperatures it is possible to induce a solid-solid phase transition by axial strain before the elasticity is lost; these transition temperatures are below the bulk transition temperature. The two phases have different (non-linear) elastic behavior: the bcc phase softens, while the close-packed phase stiffens with temperature. We also consider the reversibility of the transformation in the elastic regimes, and the role of the strain rate on the critical strain necessary for phase transition.

Position-controlled epitaxial III-V nanowires on silicon

NARCIS (Netherlands)

Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

The potential for the fabrication of wires embedded in the crystalline silicon substrate using the solid phase segregation of gold in crystallising amorphous volumes

International Nuclear Information System (INIS)

Liu, A.C.Y.; McCallum, J.C.

2004-01-01

The refinement of gold in crystallising amorphous silicon volumes was tested as a means of creating a conducting element embedded in the crystalline matrix. Amorphous silicon volumes were created by self-ion-implantation through a mask. Five hundred kiloelectronvolt Au + was then implanted into the volumes. The amorphous volumes were crystallised on a hot stage in air, and the crystallisation was characterised using cross sectional transmission electron microscopy. It was found that the amorphous silicon volumes crystallised via solid phase epitaxy at all the lateral and vertical interfaces. The interplay of the effects of the gold and also the hydrogen that infilitrated from the surface oxide resulted in a plug of amorphous material at the surface. Further annealing at this temperature demonstrated that the gold, once it had reached a certain critical concentration nucleated poly-crystalline growth instead of solid phase epitaxy. Time resolved reflectivity and Rutherford backscattering and channeling measurements were performed on large area samples that had been subject to the same implantation regime to investigate this system further. It was discovered that the crystallisation dynamics and zone refinement of the gold were complicated functions of both gold concentration and temperature. These findings do not encourage the use of this method to obtain conducting elements embedded in the crystalline silicon substrate

A robust quantitative solid phase immunoassay for the acute phase protein C-reactive protein (CRP) based on cytidine 5 '-diphosphocholine coupled dendrimers

DEFF Research Database (Denmark)

Heegaard, Peter M. H.; Pedersen, H. G.; Jensen, A. L.

2009-01-01

C-reactive protein (CRP) is an important acute phase protein, being used as a sensitive indicator of inflammation and infection and is also associated with the risk of cardiovascular problems. The present paper describes a robust and sensitive ELISA for CRP, based on the affinity of CRP for phosp......C-reactive protein (CRP) is an important acute phase protein, being used as a sensitive indicator of inflammation and infection and is also associated with the risk of cardiovascular problems. The present paper describes a robust and sensitive ELISA for CRP, based on the affinity of CRP...... was applied to determination of pig and human CRP using commercially available antibodies against human CRP. The assay was shown to be more sensitive than previously published immunoassays employing albumin-coupled cytidine diphosphocholine. The coating was stable for at least 30 days at room temperature...

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

2012-12-01

We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

Energy Technology Data Exchange (ETDEWEB)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH[sub 4] discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures [<=] 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH[sub 4] partial pressure (PCH[sub 4]) and stoichiometric composition can only be obtained in a narrow PCH[sub 4] range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T[sub s]=850 degrees C and PCH[sub 4]=0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO[sub 2] layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 [mu]A cm[sup -2], a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor structures were fabricated by thermally grown SiO[sub 2] on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10[sup 11] cm[sup -2] eV[sup -1]. Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V.

3C-SiC epitaxial films deposited by reactive magnetron sputtering: Growth, characterization and device development

International Nuclear Information System (INIS)

Wahab, Qamar ul.

1994-01-01

Epitaxial 3C-SiC films were grown on silicon substrates by reactive magnetron sputtering of pure Si target in a mixed Ar-CH 4 discharges. Films were grown on Si(001), and 4 degrees off-oriented (001) substrates. Epitaxial 3C-SiC films with sharp interface to Si substrates have been grown at substrate temperatures ≤ 900 degrees C. Above 900 degrees C interfacial reaction starts resulting in a rough SiC/Si interface. The carbon content as well as the crystalline structure was also found to be strongly dependent on CH 4 partial pressure (PCH 4 ) and stoichiometric composition can only be obtained in a narrow PCH 4 range. Films grown on Si(001) substrates contained anti domain boundaries as evident by cross-sectional transmission electron microscopy (XTEM). Films grown on (111)-oriented substrates were epitaxial at 850 degrees C but contained double positioning domains as determined by X-ray diffraction analysis and XTEM. High quality films were obtained on 4 degrees off-oriented Si(001) substrates at T s =850 degrees C and PCH 4 =0.6 mTorr. Films grown on off-oriented substrates showed atomically sharp interface to Si and also a smooth top surface. SiO 2 layer grown on such films showed atomically sharp oxide/film interface. Also the growth of epitaxial Si films on top of SiC films was realized. Au-Schottky diodes fabricated on (001)-oriented 3C-SiC films showed good rectification with a leakage current density = 4 μA cm -2 , a breakdown voltage of -15 V, an ideality factor of 1.27 and a barrier height of 1.04 eV. Metal oxide semiconductor (MOS) structures were fabricated by thermally grown SiO 2 on (111)-oriented SiC films. The capacitance-voltage measurements showed the accumulation, depletion and deep depletion region in the C-V curve. The interface trap densities were 3-7 x 10 11 cm -2 eV -1 . Finally 3C-SiC/Si heterojunction diodes processed showed good rectification and the diode had a breakdown at -110 V. 59 refs, figs, tabs

Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

Energy Technology Data Exchange (ETDEWEB)

Hueger, E.

2005-08-26

In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

Liquid phase epitaxy of abrupt junctions in InAs and studies of injection radiative tunneling processes

International Nuclear Information System (INIS)

Bull, D.J.

1977-01-01

The p-n junction in a InAs crystal, by liquid phase epitaxy is obtained. The processes of injection and tunneling radiative recombination by emitted radiation from active region of p-n junction for low injection current are studied. (M.C.K.) [pt

Synthesis of Si epitaxial layers from technical silicon by liquid-phase epitaxy method

International Nuclear Information System (INIS)

Ibragimov, Sh.I.; Saidov, A.S.; Sapaev, B.; Horvat, M.A.

2004-01-01

Full text: For today silicon is one of the most suitable materials because it is investigated, cheap and several its parameters are even just as good as those of connections A III B V . Disintegration of the USSR has led to the must difficult position of the industry of silicon instrument manufacture because of all industry of semiconductor silicon manufacture had generally concentrated in Ukraine. The importance of semiconductor silicon is rather great, because of, in opinion of expects, the nearest decade this material will dominate over not only on microelectronics but also in the majority of basic researches. Research of obtain of semiconductor silicon, power electronics and solar conversion, is topical interest of the science. In the work research of technological conditions of obtain and measurement of parameters of epitaxial layers obtained from technical silicon + stannum is resulted. Growth of silicon epitaxial layer with suitable parameters on thickness, cleanliness uniformity and structural perfection depends on the correct choice of condition of the growth and temperature. It is shown that in this case the growth occurring without preliminary clearing of materials (mix materials and substrates) at crystallization of epitaxial layer from technical silicon is accompanied by clearing of silicon film from majority of impurities order-of-magnitude. As starting raw material technical silicon of mark Kr.3 has been taken. By means of X-ray microanalyzer 'Jeol' JSM 5910 LV - Japan the quantitative analysis from the different points has been and from the different sides and from different points has been carried out. After corresponding chemical and mechanical processing the quantitative analysis of layer on chip has been carried out. Results of the quantitative analysis are shown. More effective clearing occurs that of the impurity atoms such as Al, P, Ca, Ti and Fe. The obtained material (epitaxial layer) has the parameters: specific resistance ρ∼0.1-4.0 �

Phase diagrams of ZnTe-HgTe-Te and ZnTe-CdTe-HgTe-Te systems

International Nuclear Information System (INIS)

Andrukhiv, A.M.; Litvak, A.M.; Mironov, K.E.

1992-01-01

ZnTe-HgTe-Te system liquidus surface is investigated and solid solution layers are produced in this system by the method of liquid-phase epitaxy (LPE). The theoretical analysis of experimental and theoretical data allows to calculate the diagram of ZnTe-CdTe-HgTe-Te system fusibility. A significant effect of elastic stresses of the epitaxial layer, grown on CdTe substrate, on the process of LPE of solid solutions is established

Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

NARCIS (Netherlands)

Bohnen, T.

2010-01-01

Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III

Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

KAUST Repository

Shen, Youde

2014-08-13

Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.

High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

Directory of Open Access Journals (Sweden)

Kazuo Uchida

2012-12-01

Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

NARCIS (Netherlands)

Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

Growth and characterization of Hg 1– Cd Te epitaxial films by ...

Indian Academy of Sciences (India)

Growth of Hg1–CdTe epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have ...

Simulation of reactive polydisperse sprays strongly coupled to unsteady flows in solid rocket motors: Efficient strategy using Eulerian Multi-Fluid methods

Science.gov (United States)

Sibra, A.; Dupays, J.; Murrone, A.; Laurent, F.; Massot, M.

2017-06-01

In this paper, we tackle the issue of the accurate simulation of evaporating and reactive polydisperse sprays strongly coupled to unsteady gaseous flows. In solid propulsion, aluminum particles are included in the propellant to improve the global performances but the distributed combustion of these droplets in the chamber is suspected to be a driving mechanism of hydrodynamic and acoustic instabilities. The faithful prediction of two-phase interactions is a determining step for future solid rocket motor optimization. When looking at saving computational ressources as required for industrial applications, performing reliable simulations of two-phase flow instabilities appears as a challenge for both modeling and scientific computing. The size polydispersity, which conditions the droplet dynamics, is a key parameter that has to be accounted for. For moderately dense sprays, a kinetic approach based on a statistical point of view is particularly appropriate. The spray is described by a number density function and its evolution follows a Williams-Boltzmann transport equation. To solve it, we use Eulerian Multi-Fluid methods, based on a continuous discretization of the size phase space into sections, which offer an accurate treatment of the polydispersion. The objective of this paper is threefold: first to derive a new Two Size Moment Multi-Fluid model that is able to tackle evaporating polydisperse sprays at low cost while accurately describing the main driving mechanisms, second to develop a dedicated evaporation scheme to treat simultaneously mass, moment and energy exchanges with the gas and between the sections. Finally, to design a time splitting operator strategy respecting both reactive two-phase flow physics and cost/accuracy ratio required for industrial computations. Using a research code, we provide 0D validations of the new scheme before assessing the splitting technique's ability on a reference two-phase flow acoustic case. Implemented in the industrial

Oxygen engineering of HfO{sub 2-x} thin films grown by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU-Darmstadt (Germany); Zaumseil, Peter; Schroeder, Thomas [IHP, Frankfurt, Oder (Germany)

2010-07-01

Reactive molecular beam epitaxy (R-MBE) is an ideal tool for tailoring physical properties of thin films to specific needs. For the development of cutting-edge oxides for thin film applications a precise control of oxygen defects is crucial. R-MBE in combination with rf-activated oxygen allows reproducibly growing oxide thin films with precise oxidation conditions enabling oxygen engineering. R-MBE was used to grow Hf and HfO{sub 2{+-}}{sub x} thin films with different oxidation conditions on sapphire single crystal substrates. Structural characterization was carried out using rotating anode x-ray diffraction revealing highly textured to epitaxial thin films on c-cut sapphire. Furthermore, switching of film orientation by varying the oxidation conditions was observed demonstrating the role of oxygen in the growth procedure. The investigation of electrical properties using a four probe measurement setup showed conductivities in the range of 1000 {mu}{omega}cm for oxygen deficient HfO{sub 2-x} thin films. Optical properties were investigated using a photospectrometer and additionally x-ray photoelectron spectroscopy was carried out to study the band gap and valence states. Both techniques were used to monitor the oxygen content in deficient HfO{sub 2-x} thin films. Our results demonstrate the importance of oxygen engineering even in the case of 'simple' oxides.

Advanced Si solid phase crystallization for vertical channel in vertical NANDs

Directory of Open Access Journals (Sweden)

Sangsoo Lee

2014-07-01

Full Text Available The advanced solid phase crystallization (SPC method using the SiGe/Si bi-layer structure is proposed to obtain high-mobility poly-Si thin-film transistors in next generation vertical NAND (VNAND devices. During the SPC process, the top SiGe thin film acts as a selective nucleation layer to induce surface nucleation and equiaxial microstructure. Subsequently, this SiGe thin film microstructure is propagated to the underlying Si thin film by epitaxy-like growth. The initial nucleation at the SiGe surface was clearly observed by in situ transmission electron microscopy (TEM when heating up to 600 °C. The equiaxial microstructures of both SiGe nucleation and Si channel layers were shown in the crystallized bi-layer plan-view TEM measurements. Based on these experimental results, the large-grained and less-defective Si microstructure is expected to form near the channel region of each VNAND cell transistor, which may improve the electrical characteristics.

Solid-phase peptide synthesis

DEFF Research Database (Denmark)

Jensen, Knud Jørgen

2013-01-01

This chapter provides an introduction to and overview of peptide chemistry with a focus on solid-phase peptide synthesis. The background, the most common reagents, and some mechanisms are presented. This chapter also points to the different chapters and puts them into perspective.......This chapter provides an introduction to and overview of peptide chemistry with a focus on solid-phase peptide synthesis. The background, the most common reagents, and some mechanisms are presented. This chapter also points to the different chapters and puts them into perspective....

Reactive solid surface morphology variation via ionic diffusion.

Science.gov (United States)

Sun, Zhenchao; Zhou, Qiang; Fan, Liang-Shih

2012-08-14

In gas-solid reactions, one of the most important factors that determine the overall reaction rate is the solid morphology, which can be characterized by a combination of smooth, convex and concave structures. Generally, the solid surface structure varies in the course of reactions, which is classically noted as being attributed to one or more of the following three mechanisms: mechanical interaction, molar volume change, and sintering. Here we show that if a gas-solid reaction involves the outward ionic diffusion of a solid-phase reactant then this outward ionic diffusion could eventually smooth the surface with an initial concave and/or convex structure. Specifically, the concave surface is filled via a larger outward diffusing surface pointing to the concave valley, whereas the height of the convex surface decreases via a lower outward diffusion flux in the vertical direction. A quantitative 2-D continuum diffusion model is established to analyze these two morphological variation processes, which shows consistent results with the experiments. This surface morphology variation by solid-phase ionic diffusion serves to provide a fourth mechanism that supplements the traditionally acknowledged solid morphology variation or, in general, porosity variation mechanisms in gas-solid reactions.

C-Reactive Protein Is an Important Biomarker for Prognosis Tumor Recurrence and Treatment Response in Adult Solid Tumors: A Systematic Review.

LENUS (Irish Health Repository)

Shrotriya, Shiva

2015-01-01

A systematic literature review was done to determine the relationship between elevated CRP and prognosis in people with solid tumors. C-reactive protein (CRP) is a serum acute phase reactant and a well-established inflammatory marker. We also examined the role of CRP to predict treatment response and tumor recurrence.

Interaction of GaN epitaxial layers with atomic hydrogen

Energy Technology Data Exchange (ETDEWEB)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S

2004-08-15

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H{sub 2} plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states.

Interaction of GaN epitaxial layers with atomic hydrogen

International Nuclear Information System (INIS)

Losurdo, M.; Giangregorio, M.M.; Capezzuto, P.; Bruno, G.; Namkoong, G.; Doolittle, W.A.; Brown, A.S.

2004-01-01

GaN surface passivation processes are still under development and among others hydrogen treatments are investigated. In this study, we use non-destructive optical and electrical probes such as spectroscopic ellipsometry (SE) and surface potential Kelvin probe microscopy (SP-KPM) in conjunction with non-contact atomic force microscopy (AFM) for the study of the different reactivity of Ga-polar and N-polar GaN epitaxial layers with atomic hydrogen. The GaN epitaxial layers are grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates, and GaN and AlN buffer layers are used to grow N-polar and Ga-polar films, respectively. The atomic hydrogen is produced by a remote rf (13.56 MHz) H 2 plasma in order to rule out any ion bombardment of the GaN surface and make the interaction chemical. It is found that the interaction of GaN surfaces with atomic hydrogen depends on polarity, with N-polar GaN exhibiting greater reactivity. Furthermore, it is found that atomic hydrogen is effective in the passivation of grain boundaries and surface defects states

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo

2013-06-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo; Guo, Zaibing; Wang, Qingxiao; Yang, Yang; Bai, Haili

2013-01-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Reactive transport in a partially molten system with binary solid solution

Science.gov (United States)

Jordan, J.; Hesse, M. A.

2017-12-01

Melt extraction from the Earth's mantle through high-porosity channels is required to explain the composition of the oceanic crust. Feedbacks from reactive melt transport are thought to localize melt into a network of high-porosity channels. Recent studies invoke lithological heterogeneities in the Earth's mantle to seed the localization of partial melts. Therefore, it is necessary to understand the reaction fronts that form as melt flows across the lithological interface of a heterogeneity and the background mantle. Simplified melting models of such systems aide in the interpretation and formulation of larger scale mantle models. Motivated by the aforementioned facts, we present a chromatographic analysis of reactive melt transport across lithological boundaries, using theory for hyperbolic conservation laws. This is an extension of well-known linear trace element chromatography to the coupling of major elements and energy transport. Our analysis allows the prediction of the feedbacks that arise in reactive melt transport due to melting, freezing, dissolution and precipitation for frontal reactions. This study considers the simplified case of a rigid, partially molten porous medium with binary solid solution. As melt traverses a lithological contact-modeled as a Riemann problem-a rich set of features arise, including a reacted zone between an advancing reaction front and partial chemical preservation of the initial contact. Reactive instabilities observed in this study originate at the lithological interface rather than along a chemical gradient as in most studies of mantle dynamics. We present a regime diagram that predicts where reaction fronts become unstable, thereby allowing melt localization into high-porosity channels through reactive instabilities. After constructing the regime diagram, we test the one-dimensional hyperbolic theory against two-dimensional numerical experiments. The one-dimensional hyperbolic theory is sufficient for predicting the

Preparation and characterization of a novel polymeric based solid-solid phase change heat storage material

International Nuclear Information System (INIS)

Xi Peng; Gu Xiaohua; Cheng Bowen; Wang Yufei

2009-01-01

Here we reported a two-step procedure for preparing a novel polymeric based solid-solid phase change heat storage material. Firstly, a copolymer monomer containing a polyethylene glycol monomethyl ether (MPEG) phase change unit and a vinyl unit was synthesized via the modification of hydrogen group of MPEG. Secondly, by copolymerization of the copolymer monomer and phenyl ethylene, a novel polymeric based solid-solid phase change heat storage material was prepared. The composition, structure and properties of the novel polymeric based solid-solid phase change material were characterized by IR, 1 H NMR, DSC, WAXD, and POM, respectively. The results show that the novel polymeric based solid-solid phase change material possesses of excellent crystal properties and high phase change enthalpy.

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films

Directory of Open Access Journals (Sweden)

Huaping Wu

2016-01-01

Full Text Available The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110 orientation leads to a lower symmetry and more complicated phase transition than the (111 orientation in BaTiO3 films. The increase of compressive strain will dramatically enhance the Curie temperature TC of (110-oriented BaTiO3 films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110- and (111-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Growth and characterization of Hg1–xCdxTe epitaxial films by ...

Indian Academy of Sciences (India)

Unknown

Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

Vapor-solid-solid growth mechanism driven by an epitaxial match between solid Au Zn alloy catalyst particle and Zn O nano wire at low temperature

International Nuclear Information System (INIS)

Campos, Leonardo C.; Tonezzer, Matteo; Ferlauto, Andre S.; Magalhaes-Paniago, Rogerio; Oliveira, Sergio; Ladeira, Luiz O.; Lacerda, Rodrigo G.

2008-01-01

Nowadays, the growth of nano materials, like nano wires and nano tubes, is one of the key research areas of nano technology. However, a full picture of the growth mechanism of these quasi-one dimensional systems still needs to be achieved if these materials are to be applied electronics, biology and medicinal fields. Nevertheless, in spite of considerable advances on the growth of numerous nano wires, a clear understanding of the growth mechanism is still controversial and highly discussed. The present work provides a comprehensive picture of the precise mechanism of Zn O vapor-solid-solid (VSS) nano wire growth at low temperatures and gives the fundamental reasons responsible. We demonstrate by using a combination of synchrotron XRD and high resolution TEM that the growth dynamics at low temperatures is not governed by the well-known vapor-liquid solid (VLS) mechanisms. A critical new insight on the driving factor of VSS growth is proposed in which the VSS process occurs by a solid diffusion mechanism that is driven by a preferential oxidation process of the Zn inside the alloy catalyst induced by an epitaxial match between the Zn O(10-10) plane and the γ-Au Zn(222) plane. We believe that these results are not only important for the understanding of Zn O nano wire growth but could also have significant impact on the understanding of growth mechanisms of other nano wire systems. (author)

YBa2Cu3O7-δ/NdBa2(Cu1-xNix)3O7-δ double layers by liquid-phase epitaxial growth

International Nuclear Information System (INIS)

Yao, X.; Izumi, Toru; Hobara, Natsuro; Nakamura, Yuichi; Izumi, Teruo; Shiohara, Yuh

2001-01-01

Our present investigation has answered questions pertaining to the REBa 2 Cu 3 O 7-δ (RE123, RE=rare-earth elements)-coated conductor application when NdBa 2 (Cu 1-x Ni x ) 3 O 7-δ (Ni-NdBCO) solid solution is used as a buffer layer by the liquid-phase epitaxy(LPE) process. The NiO/Ni substrate has no substantial reaction in the Ni-saturated Nd-Ba-Cu-O liquid. There is no essential Ni interdiffusion between YBa 2 Cu 3 O 7-δ (YBCO) and Ni-NdBCO LPE thick films as evident from T c values of 90 K obtained from multilayer YBCO/Ni-NdBCO samples. (author)

Advanced fabrication method for the preparation of MOF thin films: Liquid-phase epitaxy approach meets spin coating method.

KAUST Repository

Chernikova, Valeriya; Shekhah, Osama; Eddaoudi, Mohamed

2016-01-01

Here we report a new and advanced method for the fabrication of highly oriented/polycrystalline metal-organic framework (MOF) thin films. Building on the attractive features of the liquid-phase epitaxy (LPE) approach, a facile spin coating method

Multiplexed Colorimetric Solid-Phase Extraction

Science.gov (United States)

Gazda, Daniel B.; Fritz, James S.; Porter, Marc D.

2009-01-01

Multiplexed colorimetric solid-phase extraction (MC-SPE) is an extension of colorimetric solid-phase extraction (C-SPE) an analytical platform that combines colorimetric reagents, solid phase extraction, and diffuse reflectance spectroscopy to quantify trace analytes in water. In CSPE, analytes are extracted and complexed on the surface of an extraction membrane impregnated with a colorimetric reagent. The analytes are then quantified directly on the membrane surface using a handheld diffuse reflectance spectrophotometer. Importantly, the use of solid-phase extraction membranes as the matrix for impregnation of the colorimetric reagents creates a concentration factor that enables the detection of low concentrations of analytes in small sample volumes. In extending C-SPE to a multiplexed format, a filter holder that incorporates discrete analysis channels and a jig that facilitates the concurrent operation of multiple sample syringes have been designed, enabling the simultaneous determination of multiple analytes. Separate, single analyte membranes, placed in a readout cartridge create unique, analyte-specific addresses at the exit of each channel. Following sample exposure, the diffuse reflectance spectrum of each address is collected serially and the Kubelka-Munk function is used to quantify each water quality parameter via calibration curves. In a demonstration, MC-SPE was used to measure the pH of a sample and quantitate Ag(I) and Ni(II).

Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

KAUST Repository

Li, Zirun; Mi, Wenbo; Wang, Xiaocha; Zhang, Xixiang

2015-01-01

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

KAUST Repository

Li, Zirun

2015-02-02

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

International Nuclear Information System (INIS)

Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

2006-01-01

Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements

Density-functional theory for fluid-solid and solid-solid phase transitions.

Science.gov (United States)

Bharadwaj, Atul S; Singh, Yashwant

2017-03-01

We develop a theory to describe solid-solid phase transitions. The density functional formalism of classical statistical mechanics is used to find an exact expression for the difference in the grand thermodynamic potentials of the two coexisting phases. The expression involves both the symmetry conserving and the symmetry broken parts of the direct pair correlation function. The theory is used to calculate phase diagram of systems of soft spheres interacting via inverse power potentials u(r)=ε(σ/r)^{n}, where parameter n measures softness of the potential. We find that for 1/nfcc) structure while for 1/n≥0.154 the body-centred-cubic (bcc) structure is preferred. The bcc structure transforms into the fcc structure upon increasing the density. The calculated phase diagram is in good agreement with the one found from molecular simulations.

Liquid Solution Phase Epitaxial Growth of Al-doped f-SiC for LEDs

DEFF Research Database (Denmark)

Tang, Kai; Ma, Xiang; van der Eijk, Casper

light quality and longer lifespan, compared to the current yellow phosphor based white LEDs. Liquid phase epitaxy technology is able to yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium process. In addition, the technological equipment...... are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth....

Solid-solid phase change thermal storage application to space-suit battery pack

Science.gov (United States)

Son, Chang H.; Morehouse, Jeffrey H.

1989-01-01

High cell temperatures are seen as the primary safety problem in the Li-BCX space battery. The exothermic heat from the chemical reactions could raise the temperature of the lithium electrode above the melting temperature. Also, high temperature causes the cell efficiency to decrease. Solid-solid phase-change materials were used as a thermal storage medium to lower this battery cell temperature by utilizing their phase-change (latent heat storage) characteristics. Solid-solid phase-change materials focused on in this study are neopentyl glycol and pentaglycerine. Because of their favorable phase-change characteristics, these materials appear appropriate for space-suit battery pack use. The results of testing various materials are reported as thermophysical property values, and the space-suit battery operating temperature is discussed in terms of these property results.

Solid phase assays

International Nuclear Information System (INIS)

Reese, M.G.; Johnson, L.R.; Ransom, D.K.

1980-01-01

In a solid phase assay for quantitative determination of biological and other analytes, a sample such as serum is contacted with a receptor for the analyte being assayed, the receptor being supported on a solid support. No tracer for the analyte is added to the sample before contacting with the receptor; instead the tracer is contacted with the receptor after unbound analyte has been removed from the receptor. The assay can be otherwise performed in a conventional manner but can give greater sensitivity. (author)

Reactive intermediates in the gas phase generation and monitoring

CERN Document Server

Setser, D W

2013-01-01

Reactive Intermediates in the Gas Phase: Generation and Monitoring covers methods for reactive intermediates in the gas phase. The book discusses the generation and measurement of atom and radical concentrations in flow systems; the high temperature flow tubes, generation and measurement of refractory species; and the electronically excited long-lived states of atoms and diatomic molecules in flow systems. The text also describes the production and detection of reactive species with lasers in static systems; the production of small positive ions in a mass spectrometer; and the discharge-excite

Thin film structures and phase stability

International Nuclear Information System (INIS)

Clemens, B.M.; Johnson, W.L.

1990-01-01

This was a two day symposium, with invited and contributed papers as well as an evening poster session. The first day concentrated on solid state reactions with invited talks by Lindsay Greer from the University of Cambridge, King Tu from IBM Yorktown Heights, and Carl Thompson from MIT. Professor Greer observed that the diffusion of Zr is 10 6 times slower than that of Ni in amorphous NiZr, confirming that Ni is the mobile species in solid state amorphization. King Tu explained the formation of metastable phases in this film diffusion couples by the concept of maximum rate of free energy change. Carl Thompson discussed the formation of amorphous phases in metal silicon systems, and discussed a two stage nucleation and growth process. The contributed papers also generated discussion on topics such as phase segregation, amorphous silicide formation, room temperature oxidation of silicon, and nucleation during ion beam irradiation. There was a lively poster session on Monday evening with papers on a wide variety of topics covering the general area of thin film science. The second day had sessions Epitaxy and Multilayer Structure I and II, with the morning focussing on epitaxial and heteroepitaxial growth of thin films. Robin Farrow of IBM Almaden led off with an invited talk where he reported on some remarkable success he and his co-workers have had in growing single crystal epitaxial thin films and superlattices of silver, iron, cobalt and platinum on GaAs. This was followed by several talks on epitaxial growth and characterization. The afternoon focused on interfaces and structure of multilayered materials. A session on possible stress origins of the supermodulus effect was highlighted by lively interaction from the audience. Most of the papers presented at the symposium are presented in this book

Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Tuezuen, O., E-mail: Ozge.Tuzun@iness.c-strasbourg.f [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Slaoui, A.; Roques, S.; Focsa, A. [InESS, UMR 7163 CNRS-UdS, 23 rue du Loess, F-67037 Strasbourg Cedex 2 (France); Jomard, F.; Ballutaud, D. [GEMaC-UMR 8635 CNRS, 1 place Aristide Briand, F-92195 Meudon (France)

2009-10-01

In this work, undoped amorphous silicon layers were deposited on n-type AIC seed films and then annealed at different temperatures for epitaxial growth. The epitaxy was carried out using halogen lamps (rapid thermal process or RTP) or a tube conventional furnace (CTP). We investigated the morphology of the resulting 2 {mu}m thick epi-layers by means of optical microscopy. An average grain size of about 40 {mu}m is formed after 90 s annealing at 1000 {sup o}C in RTP. The stress and degree of crystallinity of the epi-layers were studied by micro-Raman Spectroscopy and UV-visible spectrometer as a function of annealing time. The presence of compressive stress is observed from the peak position which shifts from 520.0 cm{sup -1} to 521.0 cm{sup -1} and 522.3 cm{sup -1} after CTP annealing for 10 min and 90 min, respectively. It is shown that the full width at half maximum (FWHM) varies from 9.8 cm{sup -1} to 15.6 cm{sup -1}, and the magnitude of stress is changing from 325 MPa to 650 MPa. Finally, the highest crystallinity is achieved after annealing at 1000 {sup o}C for 90 min in a tube furnace exhibiting a crystalline fraction of 81.5%. X-ray diffraction technique was used to determine the preferential orientation of the poly-Si thin films formed by SPE technique on n{sup +} type AIC layer. The preferential orientation is <100> for all annealing times at 1000 {sup o}C.

Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

International Nuclear Information System (INIS)

Ozolins, V.; Wolverton, C.; Zunger, A.

1998-01-01

Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total-energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%), and Ni/Au (15%). We find that left-angle 001 right-angle is the elastically soft direction for biaxial expansion of Cu and Ni, but it is left-angle 201 right-angle for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along left-angle 111 right-angle and left-angle 001 right-angle behave like phase separating systems, while for left-angle 110 right-angle they behave like ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents. copyright 1998 The American Physical Society

Effect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Wu, Huaping, E-mail: wuhuaping@gmail.com, E-mail: hpwu@zjut.edu.cn [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian 116024 (China); Ma, Xuefu; Zhang, Zheng; Zeng, Jun; Chai, Guozhong [Key Laboratory of E& M (Zhejiang University of Technology), Ministry of Education & Zhejiang Province, Hangzhou 310014 (China); Wang, Jie [Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027 (China)

2016-01-15

The influence of crystal orientations on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO{sub 3} thin films has been investigated using an expanded nonlinear thermodynamic theory. The calculations reveal that crystal orientation has significant influence on the phase stability and phase transitions in the misfit strain-temperature phase diagrams. In particular, the (110) orientation leads to a lower symmetry and more complicated phase transition than the (111) orientation in BaTiO{sub 3} films. The increase of compressive strain will dramatically enhance the Curie temperature T{sub C} of (110)-oriented BaTiO{sub 3} films, which matches well with previous experimental data. The polarization components experience a great change across the boundaries of different phases at room temperature in both (110)- and (111)-oriented films, which leads to the huge dielectric and piezoelectric responses. A good agreement is found between the present thermodynamics calculation and previous first-principles calculations. Our work provides an insight into how to use crystal orientation, epitaxial strain and temperature to tune the structure and properties of ferroelectrics.

Assessment of solid reactive mixtures for the development of biological permeable reactive barriers

International Nuclear Information System (INIS)

Pagnanelli, Francesca; Viggi, Carolina Cruz; Mainelli, Sara; Toro, Luigi

2009-01-01

Solid reactive mixtures were tested as filling material for the development of biological permeable reactive barriers for the treatment of heavy metals contaminated waters. Mixture selection was performed by taking into account the different mechanisms operating in sulphate and cadmium removal with particular attention to bioprecipitation and sorption onto the organic matrices in the mixtures. Suspensions of eight reactive mixtures were tested for sulphate removal (initial concentration 3 g L -1 ). Each mixture was made up of four main functional components: a mix of organic sources for bacterial growth, a neutralizing agent, a porous medium and zero-valent iron. The best mixture among the tested ones (M8: 6% leaves, 9% compost, 3% zero-valent iron, 30% silica sand, 30% perlite, 22% limestone) presented optimal conditions for SRB growth (pH 7.8 ± 0.1; E h = -410 ± 5 mV) and 83% sulphate removal in 22 days (25% due to bioreduction, 32% due to sorption onto compost and 20% onto leaves). M8 mixture allowed the complete abatement of cadmium with a significant contribution of sorption over bioprecipitation (6% Cd removal due to SRB activity). Sorption properties, characterised by potentiometric titrations and related modelling, were mainly due to carboxylic sites of organic components used in reactive mixtures.

Experimental-statistical model of liquid-phase epitaxy for InP/InGaAsP/InP heterostructures

International Nuclear Information System (INIS)

Vasil'ev, M.G.; Selin, A.A.; Shelyakin, A.A.

1985-01-01

A mathematic model of the process of liquid-phase epitaxy for double InP/InGaAsP/InP heterostructures is constructed using statistical methods of experiment planning. The analysis of the model shows that the degree of In-P system melt supercooling affects considerably the characteristics of double heterostructures

Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

Energy Technology Data Exchange (ETDEWEB)

Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

1998-06-01

This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

Reactively sputtered epitaxial γ′-Fe4N films: Surface morphology, microstructure, magnetic and electrical transport properties

KAUST Repository

Mi, Wenbo

2013-10-01

Epitaxial γ′-Fe4N films with (1 0 0) and (1 1 0) orientations have been fabricated by reactive sputtering; these films were characterized by X-ray θ-2θ and φ scans, pole figures and high-resolution transmission electron microscopy. The film surface is very smooth as the film is less than 58 nm thick. The films exhibit soft ferromagnetism, and the saturation magnetization decreases with an increase in temperature, following Bloch\\'s spin wave theory. The films also exhibit a metallic conductance mechanism. Below 30 K, magnetoresistance (MR) is positive and increases linearly with the applied field in the high-field range. In the low-field range, MR increases abruptly. Above 30 K, MR is negative, and its value increases linearly with the applied field.

Growth of HfO{sub x} thin films by reactive molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany)

2008-07-01

Thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. The conditions for the growth of single oriented hafnium oxide thin films have been established. Hafnium oxide thin films were characterized by X-ray diffraction and optical absorption measurements. It was found that hafnium oxide thin films grown on r-cut sapphire were (00l) oriented whereas, on c-cut sapphire, hafnium oxide films showed different orientations depending on the growth temperature and oxidation conditions. The hafnium oxide films grown at higher temperature and under strong oxidation conditions yielded (001) oriented films on c-cut sapphire whereas slightly weaker oxidation condition leads to (111) oriented hafnium oxide films. The bandgap deducted from optical absorption measurement carried out on hafnium oxide films grown under optimized conditions agreed well with the values reported in literature. A range of oxygen deficient thin films of hafnium oxide were also grown on single crystal sapphire substrates in order to investigate the effect of oxygen vacancies on dielectric properties of hafnium oxide. The oxygen deficient thin films of hafnium oxide show a decrease in bandgap with increase in oxygen deficiency.

Gas-Phase Reactivity of Microsolvated Anions

DEFF Research Database (Denmark)

Thomsen, Ditte Linde

the gas-phase α-effect. The experimental studies are performed by means of the flowing after glow selected ion flow tube technique, and these are supplemented by electronic structure calculations. The α-nucleophile employed is the microsolvated hydrogen peroxide anion whose reactivity is compared......Gas-phase studies of ion-molecule reactions shed light on the intrinsic factors that govern reactivity; and even solvent effects can be examined in the gasphase environment by employing microsolvated ions. An area that has received considerable attention with regard to the interplay between...... to that of a series of microsolvated oxygen centered anions. The association of the nucleophiles with a single water or methanol molecule allows the α-effect to be observed in the SN2 reaction with methyl chloride; this effect was not apparent in the reactions of the unsolvated anions. The results suggest...

Combinatorial Solid-Phase Synthesis of Balanol Analogues

DEFF Research Database (Denmark)

Nielsen, John; Lyngsø, Lars Ole

1996-01-01

The natural product balanol has served as a template for the design and synthesis of a combinatorial library using solid-phase chemistry. Using a retrosynthetic analysis, the structural analogues have been assembled from three relatively accessible building blocks. The solid-phase chemistry inclu...

Epitaxial growth of AlN on single crystal Mo substrates

International Nuclear Information System (INIS)

Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

2008-01-01

We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

Epitaxial growth of AlN on single crystal Mo substrates

Energy Technology Data Exchange (ETDEWEB)

Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

2008-06-02

We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

Surface phase transitions in cu-based solid solutions

Science.gov (United States)

Zhevnenko, S. N.; Chernyshikhin, S. V.

2017-11-01

We have measured surface energy in two-component Cu-based systems in H2 + Ar gas atmosphere. The experiments on solid Cu [Ag] and Cu [Co] solutions show presence of phase transitions on the surfaces. Isotherms of the surface energy have singularities (the minimum in the case of copper solid solutions with silver and the maximum in the case of solid solutions with cobalt). In both cases, the surface phase transitions cause deficiency of surface miscibility: formation of a monolayer (multilayer) (Cu-Ag) or of nanoscale particles (Cu-Co). At the same time, according to the volume phase diagrams, the concentration and temperature of the surface phase transitions correspond to the solid solution within the volume. The method permits determining the rate of diffusional creep in addition to the surface energy. The temperature and concentration dependence of the solid solutions' viscosity coefficient supports the fact of the surface phase transitions and provides insights into the diffusion properties of the transforming surfaces.

Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0 0 0 1)

International Nuclear Information System (INIS)

Xu Gang; Jin Ping; Tazawa, Masato; Yoshimura, Kazuki

2005-01-01

Vanadium dioxide (VO 2 ) films were epitaxially grown on α-Al 2 O 3 (0 0 0 1) by rf reactive magnetron sputtering. The effects of film thickness ranging from 3 to 150 nm on optical properties were investigated. It revealed that the semiconductor--metal phase transition temperature considerably decreases as film thickness decreases, in particular for the film with thickness less than 10 nm. On the other hand, we found that the difference in visible transmittance between the two phases of VO 2 also varies with film thickness. For the films with thickness less than 50 nm, the semiconductor phase exhibits lower visible transmittance than its metallic phase, while for those with thickness larger than 50 nm the situation is reversed

The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles

Energy Technology Data Exchange (ETDEWEB)

Aboy, Maria [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain)]. E-mail: marabo@tel.uva.es; Pelaz, Lourdes [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Marques, Luis A. [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Lopez, Pedro [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Barbolla, Juan [Campus Miguel Delibes, University of Valladolid, 47011 Valladolid (Spain); Venezia, V.C. [Philips Research Leuven, Leuven (Belgium); Duffy, R. [Philips Research Leuven, Leuven (Belgium); Griffin, Peter B. [Stanford University, Stanford, CA (United States)

2004-12-15

Boron cluster formation and dissolution in high concentration B profiles and the role of Si interstitials in these processes are analyzed by kinetic non-lattice Monte Carlo atomistic simulations. For this purpose, we use theoretical structures as simplifications of boron implants into preamorphized Si, followed by low-temperature solid phase epitaxial (SPE) regrowth or laser thermal annealing process. We observe that in the presence of high B concentrations (above 10{sup 20} cm{sup -3}), significant deactivation occurs during high temperature anneal, even in the presence of only equilibrium Si interstitials. The presence of additional Si interstitials from an end of range (EOR) damage region accelerates the deactivation process and makes B deactivation slightly higher. We show that B deactivation and reactivation processes can be clearly correlated to the evolution of Si interstitial defects at the EOR. The minimum level of activation occurs when the Si interstitial defects at EOR dissolve or form very stable defects.

Position-controlled epitaxial III-V nanowires on silicon

Energy Technology Data Exchange (ETDEWEB)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

2006-06-14

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

Position-controlled epitaxial III-V nanowires on silicon

International Nuclear Information System (INIS)

Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

2006-01-01

We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

International Nuclear Information System (INIS)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

2016-01-01

The synthesis of a 50 unit cell thick n = 4 Sr_n_+_1Ti_nO_3_n_+_1 (Sr_5Ti_4O_1_3) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO_2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO_2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO_3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Solid phase transformations

CERN Document Server

Čermák, J

2008-01-01

This special-topic book, devoted to ""Solid Phase Transformations"" , covers a broad range of phenomena which are of importance in a number of technological processes. Most commercial alloys undergo thermal treatment after casting, with the aim of imparting desired compositions and/or optimal morphologies to the component phases. In spite of the fact that the topic has lain at the center of physical metallurgy for a long time, there are numerous aspects which are wide open to potential investigative breakthroughs. Materials with new structures also stimulate research in the field, as well as n

Vapor phase epitaxy of silicon on meso porous silicon for deposition on economical substrate and low cost photovoltaic application

International Nuclear Information System (INIS)

Quoizola, S.

2003-01-01

The silicon is more and more used in the industry. Meanwhile the production cost is a problem to solve to develop the photovoltaic cells production. This thesis presents a new technology based on the use of a meso-porous silicon upper layer,to grow the active silicon layer of 50 μm width. The photovoltaic cell is then realized, the device is removed and placed on a low cost substrate. The silicon substrate of beginning can be used again after cleaning. The first chapter presents the operating and the characteristics of the silicon photovoltaic cell. The second chapter is devoted to the growth technique, the vapor phase epitaxy, and the third chapter to the epitaxy layer. The chapter four deals with the porous silicon and the structure chosen in this study. The chapter five is devoted to the characterization of the epitaxy layer on porous silicon. The photovoltaic cells realized on these layers are presented in the last chapter. (A.L.B.)

A novel series of isoreticular metal organic frameworks: Realizing metastable structures by liquid phase epitaxy

KAUST Repository

Liu, Jinxuan; Lukose, Binit; Shekhah, Osama; Arslan, Hasan Kemal; Weidler, Peter; Gliemann, Hartmut; Brä se, Stefan; Grosjean, Sylvain; Godt, Adelheid; Feng, Xinliang; Mü llen, Klaus; Magdau, Ioan-Bogdan; Heine, Thomas; Wö ll, Christof

2012-01-01

A novel class of metal organic frameworks (MOFs) has been synthesized from Cu-acetate and dicarboxylic acids using liquid phase epitaxy. The SURMOF-2 isoreticular series exhibits P4 symmetry, for the longest linker a channel-size of 3 3 nm2 is obtained, one of the largest values reported for any MOF so far. High quality, ab-initio electronic structure calculations confirm the stability of a regular packing of (Cu++) 2-carboxylate paddle-wheel planes with P4 symmetry and reveal, that the SURMOF-2 structures are in fact metastable, with a fairly large activation barrier for the transition to the bulk MOF-2 structures exhibiting a lower, twofold (P2 or C2) symmetry. The theoretical calculations also allow identifying the mechanism for the low-temperature epitaxial growth process and to explain, why a synthesis of this highly interesting, new class of high-symmetry, metastable MOFs is not possible using the conventional solvothermal process.

A novel series of isoreticular metal organic frameworks: Realizing metastable structures by liquid phase epitaxy

KAUST Repository

Liu, Jinxuan

2012-12-04

A novel class of metal organic frameworks (MOFs) has been synthesized from Cu-acetate and dicarboxylic acids using liquid phase epitaxy. The SURMOF-2 isoreticular series exhibits P4 symmetry, for the longest linker a channel-size of 3 3 nm2 is obtained, one of the largest values reported for any MOF so far. High quality, ab-initio electronic structure calculations confirm the stability of a regular packing of (Cu++) 2-carboxylate paddle-wheel planes with P4 symmetry and reveal, that the SURMOF-2 structures are in fact metastable, with a fairly large activation barrier for the transition to the bulk MOF-2 structures exhibiting a lower, twofold (P2 or C2) symmetry. The theoretical calculations also allow identifying the mechanism for the low-temperature epitaxial growth process and to explain, why a synthesis of this highly interesting, new class of high-symmetry, metastable MOFs is not possible using the conventional solvothermal process.

Solid-Solid Vacuum Regolith Heat-Exchanger for Oxygen Production, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Phase-1 project will demonstrate the feasibility of using a novel coaxial counterflow solid-solid heat exchanger to recover heat energy from spent regolith...

Epitaxial thin film growth of LiH using a liquid-Li atomic template

International Nuclear Information System (INIS)

Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

2014-01-01

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al 2 O 3 substrates indicated polycrystalline films with a LiAlO 2 secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides

Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates

Science.gov (United States)

Burmistrova, Polina V.; Maassen, Jesse; Favaloro, Tela; Saha, Bivas; Salamat, Shuaib; Rui Koh, Yee; Lundstrom, Mark S.; Shakouri, Ali; Sands, Timothy D.

2013-04-01

Epitaxial ScN(001) thin films were grown on MgO(001) substrates by dc reactive magnetron sputtering. The deposition was performed in an Ar/N2 atmosphere at 2 × 10-3 Torr at a substrate temperature of 850 °C in a high vacuum chamber with a base pressure of 10-8 Torr. In spite of oxygen contamination of 1.6 ± 1 at. %, the electrical resistivity, electron mobility, and carrier concentration obtained from a typical film grown under these conditions by room temperature Hall measurements are 0.22 mΩ cm, 106 cm2 V-1 s-1, and 2.5 × 1020 cm-3, respectively. These films exhibit remarkable thermoelectric power factors of 3.3-3.5 × 10-3 W/mK2 in the temperature range of 600 K to 840 K. The cross-plane thermal conductivity is 8.3 W/mK at 800 K yielding an estimated ZT of 0.3. Theoretical modeling of the thermoelectric properties of ScN calculated using a mean-free-path of 23 nm at 300 K is in very good agreement with the experiment. These results also demonstrate that further optimization of the power factor of ScN is possible. First-principles density functional theory combined with the site occupancy disorder technique was used to investigate the effect of oxygen contamination on the electronic structure and thermoelectric properties of ScN. The computational results suggest that oxygen atoms in ScN mix uniformly on the N site forming a homogeneous solid solution alloy. Behaving as an n-type donor, oxygen causes a shift of the Fermi level in ScN into the conduction band without altering the band structure and the density of states.

Solid-phase spectrophotometry

International Nuclear Information System (INIS)

Brykina, G.D.; Marchenko, D.Yu.; Shpigun, O.A.

1995-01-01

Solid-phase spectrophotometry (SPS), which is based on the direct measurement of light absorption of an ion exchanger containing a substance of interest, was reviewed. Since 1976, it has been known that aborbance of an ion exchanger is directly proportional to the concentration of a particular ion in solution. A similar dependence can also be followed for other sorbents, as well as for foams, membranes, films, etc., which do not exhibit ion exchange properties. One can use absorption, diffuse reflection, and luminescence spectra parameters as an analytical signal. Thus, SPS of ion exchangers is among the analytical techniques that combine the sorption concentration and surface determination of the substance of interest. This review summarizes the advancements in SPS over the last six years and demonstrates the prospects for its development. Special attention is paid to experimental methods for measuring solid-phase absorption and to the basic procedures of sample preparation, including new ones. These two facets are of great importance for obtaining precise results and extending the capabilities of SPS

Influence of epitaxial strain on multiple-mode compounds: The case of SrBi.sub.2./sub.Nb.sub.2./sub.O.sub.9./sub.

Czech Academy of Sciences Publication Activity Database

Petralanda, U.; Hlinka, Jiří; Extebarria, I.

2017-01-01

Roč. 96, č. 14 (2017), s. 1-7, č. článku 144112. ISSN 2469-9950 R&D Projects: GA ČR GA15-04121S Grant - others:AV ČR(CZ) PAN-17-04 Program:Bilaterální spolupráce Institutional support: RVO:68378271 Keywords : ferroelectrics * thin films * epitaxy * ab-initio methods * phase transitions Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

International Nuclear Information System (INIS)

Yeh, N.-T.; Liu, W.-S.; Chen, S.-H.; Chiu, P.-C.; Chyi, J.-I.

2002-01-01

This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm 2 , an internal loss of 1.35 cm -1 , and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm 2 are measured

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Wax Precipitation Modeled with Many Mixed Solid Phases

DEFF Research Database (Denmark)

Heidemann, Robert A.; Madsen, Jesper; Stenby, Erling Halfdan

2005-01-01

The behavior of the Coutinho UNIQUAC model for solid wax phases has been examined. The model can produce as many mixed solid phases as the number of waxy components. In binary mixtures, the solid rich in the lighter component contains little of the heavier component but the second phase shows sub......-temperature and low-temperature forms, are pure. Model calculations compare well with the data of Pauly et al. for C18 to C30 waxes precipitating from n-decane solutions. (C) 2004 American Institute of Chemical Engineers....

Characterization of low Al content Al{sub x}Ga{sub 1-x}N epitaxial films grown by atmospheric-pressure MOVPE

Energy Technology Data Exchange (ETDEWEB)

Toure, A.; Halidou, I.; Benzarti, Z.; Bchetnia, A.; El Jani, B. [Faculte des Sciences, Unite de Recherche sur les Hetero-Epitaxies et Applications, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-Chimie des Materiaux, Faculte des Sciences de Monastir, Unite de Service Commun de Recherche ' ' High Resolution X-ray Diffractometer' ' , 5019 Monastir (Tunisia)

2012-05-15

Al{sub x}Ga{sub 1-x}N epitaxial films grown on GaN/sapphire by atmospheric-pressure metalorganic vapor phase epitaxy (AP-MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of Al{sub x}Ga{sub 1-x}N was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high-resolution X-ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half-maximum (FWHM) is observed with Al content. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Key Role of Nitrate in Phase Transitions of Urban Particles: Implications of Important Reactive Surfaces for Secondary Aerosol Formation

Science.gov (United States)

Sun, Jiaxing; Liu, Lei; Xu, Liang; Wang, Yuanyuan; Wu, Zhijun; Hu, Min; Shi, Zongbo; Li, Yongjie; Zhang, Xiaoye; Chen, Jianmin; Li, Weijun

2018-01-01

Ammonium sulfate (AS) and ammonium nitrate (AN) are key components of urban fine particles. Both field and model studies showed that heterogeneous reactions of SO2, NO2, and NH3 on wet aerosols accelerated the haze formation in northern China. However, little is known on phase transitions of AS-AN containing haze particles. Here hygroscopic properties of laboratory-generated AS-AN particles and individual particles collected during haze events in an urban site were investigated using an individual particle hygroscopicity system. AS-AN particles showed a two-stage deliquescence at mutual deliquescence relative humidity (MDRH) and full deliquescence relative humidity (DRH) and three physical states: solid before MDRH, solid-aqueous between MDRH and DRH, and aqueous after DRH. During hydration, urban haze particles displayed a solid core and aqueous shell at RH = 60-80% and aqueous phase at RH > 80%. Most particles were in aqueous phase at RH > 50% during dehydration. Our results show that AS content in individual particles determines their DRH and AN content determines their MDRH. AN content increase can reduce MDRH, which indicates occurrence of aqueous shell at lower RH. The humidity-dependent phase transitions of nitrate-abundant urban particles are important to provide reactive surfaces of secondary aerosol formation in the polluted air.

Solid State Structure-Reactivity Studies on Bixbyites, Fluorites and Perovskites Belonging to the Vanadate, Titanate and Cerate Families

Science.gov (United States)

Shafi, Shahid P.

This thesis primarily focuses on the systematic understanding of structure-reactivity relationships in two representative systems: bixbyite and related structures as well as indium doped CeO2. Topotactic reaction routes have gained significant attention over the past two decades due to their potential to access kinetically controlled metastable materials. This has contributed substantially to the understanding of solid state reaction pathways and provided first insights into mechanisms. Contrary to the widely used ex-situ methods, in-situ techniques including powder x-ray diffraction and thermogravimetric-differential thermal analysis have been employed extensively throughout this work in order to follow the reaction pathways in real time. Detailed analysis of the AVO3 (A = In, Sc) bixbyite reactivity under oxidative conditions has been carried out and a variety of novel metastable oxygen defect phases have been identified and characterized. The novel metastable materials have oxygen deficient fluorite structures and consequently are potential ion conductors. Structural aspects of the topotactic vs. reconstructive transformations are illustrated with this model system. The structure-reactivity study of AVO3 phases was extended to AVO3 perovskite family. Based on the research methodologies and results from AVO3 bixbyite reactivity studies a generalized mechanistic oxidation pathway has been established with a non-vanadium phase, ScTiO3 bixbyite. However, there is stark contrast in terms of structural stability and features beyond this stability limit during AVO3 and ScTiO3 bixbyite reaction pathways. A series of complex reaction sequences including phase separation and phase transitions were identified during the investigation of ScTiO3 reactivity. The two-step formation pathway for the fluorite-type oxide ion conductor Ce1-xInxO2-delta (0 ≤ x ≤ 0.3) is being reported. The formation of the BaCe1-xInxO 3-delta perovskites and the subsequent CO2-capture reaction

Solid - solid and solid - liquid phase transitions of iron and iron alloys under laser shock compression

Science.gov (United States)

Harmand, M.; Krygier, A.; Appel, K.; Galtier, E.; Hartley, N.; Konopkova, Z.; Lee, H. J.; McBride, E. E.; Miyanishi, K.; Nagler, B.; Nemausat, R.; Vinci, T.; Zhu, D.; Ozaki, N.; Fiquet, G.

2017-12-01

An accurate knowledge of the properties of iron and iron alloys at high pressures and temperatures is crucial for understanding and modelling planetary interiors. While Earth-size and Super-Earth Exoplanets are being discovered in increasingly large numbers, access to detailed information on liquid properties, melting curves and even solid phases of iron and iron at the pressures and temperatures of their interiors is still strongly limited. In this context, XFEL sources coupled with high-energy lasers afford unique opportunities to measure microscopic structural properties at far extreme conditions. Also the achievable time resolution allows the shock history and phase transition mechanisms to be followed during laser compression, improving our understanding of the high pressure and high strain experiments. Here we present recent studies devoted to investigate the solid-solid and solid-liquid transition in laser-shocked iron and iron alloys (Fe-Si, Fe-C and Fe-O alloys) using X-ray diffraction and X-ray diffuse scattering. Experiment were performed at the MEC end-station of the LCLS facility at SLAC (USA). Detection of the diffuse scattering allowed the identification of the first liquid peak position along the Hugoniot, up to 4 Mbar. The time resolution shows ultrafast (between several tens and several hundreds of picoseconds) solid-solid and solid-liquid phase transitions. Future developments at XFEL facilities will enable detailed studies of the solid and liquid structures of iron and iron alloys as well as out-of-Hugoniot studies.

Epitaxial strain-engineered self-assembly of magnetic nanostructures in FeRh thin films

International Nuclear Information System (INIS)

Witte, Ralf; Kruk, Robert; Molinari, Alan; Wang, Di; Brand, Richard A; Hahn, Horst; Schlabach, Sabine; Provenzano, Virgil

2017-01-01

In this paper we introduce an innovative bottom–up approach for engineering self-assembled magnetic nanostructures using epitaxial strain-induced twinning and phase separation. X-ray diffraction, 57 Fe Mössbauer spectroscopy, scanning tunneling microscopy, and transmission electron microscopy show that epitaxial films of a near-equiatomic FeRh alloy respond to the applied epitaxial strain by laterally splitting into two structural phases on the nanometer length scale. Most importantly, these two structural phases differ with respect to their magnetic properties, one being paramagnetic and the other ferromagnetic, thus leading to the formation of a patterned magnetic nanostructure. It is argued that the phase separation directly results from the different strain-dependence of the total energy of the two competing phases. This straightforward relation directly enables further tailoring and optimization of the nanostructures’ properties. (paper)

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman, E-mail: rue2@psu.edu [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2016-07-25

The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Growth of Ba1-zSrzBiO3-y single crystals and the prospects for its application for liquid phase epitaxy of Ba1-xKxBiO3-δ superconductor

International Nuclear Information System (INIS)

Soldatov, A.G.; Barilo, S.N.; Shiryaev, S.V.; Finskaya, V.M.

2002-01-01

In order to get a substrate for liquid phase epitaxy of the Ba 1-x K x BiO 3-δ (BKBO) superconducting films a possibility to grow single crystals of the Ba 1-z Sr z BiO 3-y (BSBO) solid solution series was investigated. The BSBO crystals with z = 0; 0.2; 0.29; 0.45; 0.49; 0.50; 0.54; 0.58 were obtained by crystallization from melt. The temperature versus composition phase diagram of the BaO · 1/2Bi 2 O 3 -SrO · 1/2Bi 2 O 3 system was constructed. A comparative analysis of the effect of cation composition and oxygen nonstoichiometry on the BSBO lattice parameters was carried out. The growth features of superconducting BKBO films onto BSBO substrates are discussed [ru

Crystallization engineering as a route to epitaxial strain control

Directory of Open Access Journals (Sweden)

Andrew R. Akbashev

2015-10-01

Full Text Available The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001SrTiO3 and (001LaAlO3 substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001BiFeO3 phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001SrTiO3 results in a coherently strained film, the same films obtained on (001LaAlO3 showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001SrTiO3. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

Multiple solid-phase microextraction

NARCIS (Netherlands)

Koster, EHM; de Jong, GJ

2000-01-01

Theoretical aspects of multiple solid-phase microextraction are described and the principle is illustrated with the extraction of lidocaine from aqueous solutions. With multiple extraction under non-equilibrium conditions considerably less time is required in order to obtain an extraction yield that

Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

Science.gov (United States)

2016-09-15

AFRL-AFOSR-VA-TR-2016-0319 Chirality -Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and...TELEPHONE NUMBER (Include area code) DISTRIBUTION A: Distribution approved for public release. 15-06-2016 final Jun 2014 - Jun 2016 Chirality ...for Public Release; Distribution is Unlimited. In this report, we present our efforts in establishing a novel and effective approach for chirality

Aberration corrected STEM of defects in epitaxial n=4 Ruddlesden-Popper phase Can+1MnnO3n+1

International Nuclear Information System (INIS)

Wang, P; Bleloch, A L; Goodhew, P J; Yan, L; Niu, H J; Rosseinsky, M J; Chalker, P R

2008-01-01

Defects in Ruddlesden-Popper phase CaO·[(CaMnO 3 )] 4 epitaxial films grown on SrTiO 3 (001) by pulsed laser deposition have been investigated using high angle annular dark field imaging in an aberration-corrected STEM. The stacking faults perpendicular and parallel to the substrate formed during the growth are discussed in detail. The desired n = 4 RP phase is imaged and chemically analyzed at the atomic scale using electron energy loss spectroscopy.

Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

International Nuclear Information System (INIS)

Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

2013-01-01

In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

Borylnitrenes: electrophilic reactive intermediates with high reactivity towards C-H bonds.

Science.gov (United States)

Bettinger, Holger F; Filthaus, Matthias

2010-12-21

Borylnitrenes (catBN 3a and pinBN 3b; cat = catecholato, pin = pinacolato) are reactive intermediates that show high tendency towards insertion into the C-H bonds of unactivated hydrocarbons. The present article summarizes the matrix isolation investigations that were aimed at identifying, characterizing and investigating the chemical behaviour of 3a by spectroscopic means, and of the experiments in solution and in the gas phase that were performed with 3b. Comparison with the reactivity reported for difluorovinylidene 1a in solid argon indicates that 3a shows by and large similar reactivity, but only after photochemical excitation. The derivative 3b inserts into the C-H bonds of hydrocarbon solvents in high yields and thus allows the formation of primary amines, secondary amines, or amides from "unreactive" hydrocarbons. It can also be used for generation of methylamine or methylamide from methane in the gas phase at room temperature. Remaining challenges in the chemistry of borylnitrenes are briefly summarized.

Effect of solids, caloric content on dual-phase gastric emptying

Energy Technology Data Exchange (ETDEWEB)

Van Den Maegdenbergh, V.; Urbain, J.L.; Siegel, J.A.; Mortelmans, L.; De Roo, M. (Univ. Hospital Gasthuisberg, Leuven (Belgium) Temple Univ. Hospital, Philadelphia, PA (USA))

1990-03-01

The dual-phase gastric emptying technique is routinely employed to determine the differential emptying of solids and liquids in a wide spectrum of gastrointestinal diseases. Composition, acidity, volume, caloric density, physical form and viscosity of the test means have been shown to be important determinants for the quantitative evaluation of gastric emptying. In this study, the authors have evaluated the effect of increasing the caloric content of the solid portion of a physiologic test mean on both solid and liquid emptying kinetics in health male volunteers. They observed that increasing solid caloric content delayed emptying of both solids and liquids. For the solid phase, the delay was accounted for by a longer lag phase and decrease in emptying rate; for liquids a longer emptying rate was also obtained. They conclude that modification of the caloric content of the solid portion of a meal not only affects the emptying of the solid phase but also alters the emptying of the liquid component of the meal.

Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes

DEFF Research Database (Denmark)

Tang, Kai; Ma, Xiang; can der Eijk, Casper

efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition....... The experimental results are presented and discussed. Since operational temperature of LPE growth is much lower than that currently used in physical vapour transport (PVT) process, it is expected to save the energy consumption for SiC crystal growth....

Phase stability in wear-induced supersaturated Al-Ti solid solution

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Y.; Yokoyama, K. [Dept. of Functional Machinery Mechanics Shinshu Univ., Ueda (Japan); Hosoda, H. [Precision and Intelligence Lab., Tokyo Inst. of Tech., Nagatsuta, Midori-ku, Yokohama (Japan)

2002-07-01

Al-Ti supersaturated solid solutions were introduced by wear testing and the rapid quenching of an Al/Al{sub 3}Ti composite (part of an Al/Al{sub 3}Ti functionally graded material) that was fabricated using the centrifugal method. The phase stability of the supersaturated solid solution was studied through systematic annealing of the supersaturated solid solution. It was found that the Al-Ti supersaturated solid solution decomposed into Al and Al{sub 3}Ti intermetallic compound phases during the heat treatment. The Al-Ti supersaturated solid solutions fabricated were, therefore, not an equilibrium phase, and thus decomposed into the equilibrium phases during heat treatment. It was also found that heat treatment leads to a significant hardness increase for the Al-Ti supersaturated solid solution. Finally, it was concluded that formation of the wear-induced supersaturated solid solution layer was a result of severe plastic deformation. (orig.)

Epitaxial Graphene: A New Material for Electronics

Science.gov (United States)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José ; Burriel, Mó nica

2010-01-01

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation

Novel materials and methods for solid-phase extraction and liquid chromatography

Energy Technology Data Exchange (ETDEWEB)

Ambrose, Diana [Iowa State Univ., Ames, IA (United States)

1997-06-24

This report contains a general introduction which discusses solid-phase extraction and solid-phase micro-extraction as sample preparation techniques for high-performance liquid chromatography, which is also evaluated in the study. This report also contains the Conclusions section. Four sections have been removed and processed separately: silicalite as a sorbent for solid-phase extraction; a new, high-capacity carboxylic acid functionalized resin for solid-phase extraction; semi-micro solid-phase extraction of organic compounds from aqueous and biological samples; and the high-performance liquid chromatographic determination of drugs and metabolites in human serum and urine using direct injection and a unique molecular sieve.

Growth process and structure of Er/Si(100) thin film

International Nuclear Information System (INIS)

Fujii, S.; Michishita, Y.; Miyamae, N.; Suto, H.; Honda, S.; Okado, H.; Oura, K.; Katayama, M.

2006-01-01

The solid-phase reactive epitaxial growth processes and structures of Er/Si(100) thin films were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The as-deposited Er film grown at room temperature was transformed into crystalline rectangular-shaped islands after annealing at 900 deg. C. These islands have a hexagonal AlB 2 -type structure and the epitaxial relationship is determined to be ErSi 2 (011-bar0)[0001]//Si(100)[011-bar]. It has been revealed that the surface of the Er silicide island is terminated with an Er plane

Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

NARCIS (Netherlands)

Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

2004-01-01

Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

Axial dispersion of gas and solid phases in a gas—solid packed column at trickle flow

NARCIS (Netherlands)

Roes, A.W.M.; van Swaaij, Willibrordus Petrus Maria

1979-01-01

Axial dispersion of gas and solid phases in a gas—solid packed column at trickle flow, a promising new countercurrent operation, was evaluated using residence time distribution (RTD) experiments. The column was packed with dumped Pall rings, the gas phase was air at ambient conditions and the solid

Solid-phase extraction versus matrix solid-phase dispersion: Application to white grapes.

Science.gov (United States)

Dopico-García, M S; Valentão, P; Jagodziñska, A; Klepczyñska, J; Guerra, L; Andrade, P B; Seabra, R M

2007-11-15

The use of matrix solid-phase dispersion (MSPD) was tested to, separately, extract phenolic compounds and organic acids from white grapes. This method was compared with a more conventional analytical method previously developed that combines solid liquid extraction (SL) to simultaneously extract phenolic compounds and organic acids followed by a solid-phase extraction (SPE) to separate the two types of compounds. Although the results were qualitatively similar for both techniques, the levels of extracted compounds were in general quite lower on using MSPD, especially for organic acids. Therefore, SL-SPE method was preferred to analyse white "Vinho Verde" grapes. Twenty samples of 10 different varieties (Alvarinho, Avesso, Asal-Branco, Batoca, Douradinha, Esganoso de Castelo Paiva, Loureiro, Pedernã, Rabigato and Trajadura) from four different locations in Minho (Portugal) were analysed in order to study the effects of variety and origin on the profile of the above mentioned compounds. Principal component analysis (PCA) was applied separately to establish the main sources of variability present in the data sets for phenolic compounds, organic acids and for the global data. PCA of phenolic compounds accounted for the highest variability (77.9%) with two PCs, enabling characterization of the varieties of samples according to their higher content in flavonol derivatives or epicatechin. Additionally, a strong effect of sample origin was observed. Stepwise linear discriminant analysis (SLDA) was used for differentiation of grapes according to the origin and variety, resulting in a correct classification of 100 and 70%, respectively.

Phase coexistence in ferroelectric solid solutions: Formation of monoclinic phase with enhanced piezoelectricity

Directory of Open Access Journals (Sweden)

Xiaoyan Lu

2016-10-01

Full Text Available Phase morphology and corresponding piezoelectricity in ferroelectric solid solutions were studied by using a phenomenological theory with the consideration of phase coexistence. Results have shown that phases with similar energy potentials can coexist, thus induce interfacial stresses which lead to the formation of adaptive monoclinic phases. A new tetragonal-like monoclinic to rhombohedral-like monoclinic phase transition was predicted in a shear stress state. Enhanced piezoelectricity can be achieved by manipulating the stress state close to a critical stress field. Phase coexistence is universal in ferroelectric solid solutions and may provide a way to optimize ultra-fine structures and proper stress states to achieve ultrahigh piezoelectricity.

Epitaxial thin film growth of LiH using a liquid-Li atomic template

Energy Technology Data Exchange (ETDEWEB)

Oguchi, Hiroyuki, E-mail: oguchi@nanosys.mech.tohoku.ac.jp [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan); Micro System Integration Center (muSIC), Tohoku University, Sendai 980-0845 (Japan); Ikeshoji, Tamio; Orimo, Shin-ichi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro [Advanced Institute for Materials Research (AIMR), Tohoku University, Sendai 980-8577 (Japan); Kuwano, Hiroki [Department of Nanomechanics, Tohoku University, Sendai 980-8579 (Japan)

2014-11-24

We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

Using reweighting and free energy surface interpolation to predict solid-solid phase diagrams

Science.gov (United States)

Schieber, Natalie P.; Dybeck, Eric C.; Shirts, Michael R.

2018-04-01

Many physical properties of small organic molecules are dependent on the current crystal packing, or polymorph, of the material, including bioavailability of pharmaceuticals, optical properties of dyes, and charge transport properties of semiconductors. Predicting the most stable crystalline form at a given temperature and pressure requires determining the crystalline form with the lowest relative Gibbs free energy. Effective computational prediction of the most stable polymorph could save significant time and effort in the design of novel molecular crystalline solids or predict their behavior under new conditions. In this study, we introduce a new approach using multistate reweighting to address the problem of determining solid-solid phase diagrams and apply this approach to the phase diagram of solid benzene. For this approach, we perform sampling at a selection of temperature and pressure states in the region of interest. We use multistate reweighting methods to determine the reduced free energy differences between T and P states within a given polymorph and validate this phase diagram using several measures. The relative stability of the polymorphs at the sampled states can be successively interpolated from these points to create the phase diagram by combining these reduced free energy differences with a reference Gibbs free energy difference between polymorphs. The method also allows for straightforward estimation of uncertainties in the phase boundary. We also find that when properly implemented, multistate reweighting for phase diagram determination scales better with the size of the system than previously estimated.

Heterogeneous Ferroelectric Solid Solutions Phases and Domain States

CERN Document Server

Topolov, Vitaly

2012-01-01

The book deals with perovskite-type ferroelectric solid solutions for modern materials science and applications, solving problems of complicated heterophase/domain structures near the morphotropic phase boundary and applications to various systems with morphotropic phases. In this book domain state–interface diagrams are presented for the interpretation of heterophase states in perovskite-type ferroelectric solid solutions. It allows to describe the stress relief in the presence of polydomain phases, the behavior of unit-cell parameters of coexisting phases and the effect of external electric fields. The novelty of the book consists in (i) the first systematization of data about heterophase states and their evolution in ferroelectric solid solutions (ii) the general interpretation of heterophase and domain structures at changing temperature, composition or electric field (iii) the complete analysis of interconnection domain structures, unit-cell parameters changes, heterophase structures and stress relief.

Epitaxial growth of mixed conducting layered Ruddlesden–Popper Lan+1NinO3n+1 (n = 1, 2 and 3) phases by pulsed laser deposition

International Nuclear Information System (INIS)

Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J.

2013-01-01

Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO 3 and NdGaO 3 substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La n+1 Ni n O 3n+1 (n = 1, 2 and 3) have been epitaxially grown on SrTiO 3 (0 0 1) or NdGaO 3 (1 1 0) single crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time

Optical effects induced by epitaxial tension in lead titanate

Czech Academy of Sciences Publication Activity Database

Dejneka, Alexandr; Chvostová, Dagmar; Pacherová, Oliva; Kocourek, Tomáš; Jelínek, Miroslav; Tyunina, Marina

2018-01-01

Roč. 112, č. 3 (2018), s. 1-5, č. článku 031111. ISSN 0003-6951 R&D Projects: GA ČR GA15-13778S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : epitaxy * inorganic compounds * optical properties * ferroelectric materials * optical metrology Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics , supercond.) Impact factor: 3.411, year: 2016

Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

International Nuclear Information System (INIS)

Dobosz, D.; Zytkiewicz, Z.R.; Jakiela, R.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Piotrowski, T.T.; Barcz, A.

2005-01-01

The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750 C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580 C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480 C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

Energy Technology Data Exchange (ETDEWEB)

Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

2010-02-15

The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes

International Nuclear Information System (INIS)

Suemasu, T.; Takakura, K.; Li, Cheng; Ozawa, Y.; Kumagai, Y.; Hasegawa, F.

2004-01-01

In this paper, we review the detailed study of epitaxial growth of β-FeSi 2 films by reactive deposition epitaxy (RDE), multilayer technique and molecular beam epitaxy (MBE). The p- and n-type β-FeSi 2 was formed when it was grown under an Fe-rich and an Si-rich condition, respectively. The maximum electron and hole mobilities of the β-FeSi 2 epitaxial films reached 6900 and 13000 cm 2 /V·s for the n- and p-type β-FeSi 2 , respectively, at around 50 K. Room temperature (RT) 1.6 μm electroluminescence (EL) was realized by optimizing the growth conditions for p-Si/β-FeSi 2 particles/n-Si structures prepared by RDE for β-FeSi 2 and by MBE for Si

Comparative study on the roles of anisotropic epitaxial strain and chemical doping in inducing the antiferromagnetic insulator phase in manganite films

Science.gov (United States)

Jin, Feng; Feng, Qiyuan; Guo, Zhuang; Lan, Da; Wang, Lingfei; Gao, Guanyin; Xu, Haoran; Chen, Binbin; Chen, Feng; Lu, Qingyou; Wu, Wenbin

2017-11-01

Epitaxial strain and chemical doping are two different methods that are commonly used to tune the physical properties of epitaxial perovskite oxide films, but their cooperative effects are less addressed. Here we try to tune the phase separation (PS) in (La1-xP rx) 2 /3C a1 /3Mn O3 (0 ≤x ≤0.4 , LPCMO) films via cooperatively controlling the anisotropic epitaxial strain (AES) and the Pr doping. These films are grown simultaneously on NdGa O3(110 ) ,(LaAlO3) 0.3(SrAl0.5Ta0.5O3 ) 0.7(001 ) , and NdGa O3(001 ) substrates with progressively increased in-plane AES, and probed by x-ray diffraction, magnetotransport, and magnetic force microscopy (MFM) measurements. Although it is known that for x =0 the AES can enhance the orthorhombicity of the films yielding a phase diagram with the antiferromagnetic charge-ordered insulator (AF-COI) state induced, which is quite different from the bulk one, we illustrate that the Pr doping can further drive the films towards a more robust COI state. This cooperative effect is reflected by the increasing magnetic fields needed to melt the COI phase as a function of AES and the doping level. More strikingly, by directly imaging the phase competition morphology of the LPCMO /NdGa O3(001 ) films via MFM, we find that during COI melting the PS domain structure is subject to both AES and the quenched disorder. However, in the reverse process, as the magnetic field is decreased, the COI phase reappears and the AES dominates leaving a crystalline-orientation determined self-organized microstructure. This finding suggests that the PS states and the domain configurations can be selectively controlled by the AES and/or the quenched disorder, which may shed some light on the engineering of PS domains for device fabrications.

For progress in natural science: Materials international investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3 epitaxial films

Directory of Open Access Journals (Sweden)

Mengmeng Yang

2015-10-01

Full Text Available Vanadium dioxide (VO2 epitaxial thin films on (0001-oriented Al2O3 substrates were prepared using radio frequency (RF magnetron sputtering techniques. To study the metal-insulator-transition (MIT mechanism and extend the applications of VO2 epitaxial films at terahertz (THz band, temperature-dependent X-ray diffraction (XRD and THz time domain spectroscopy of the VO2 epitaxial films were performed. Both the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical resistance. Consequently, the MIT of the VO2/Al2O3 epitaxial films should be co-triggered by the structural phase transition and electronic transition. Moreover, the very large resistance change (on the order of ~103 and THz response (with a transmission modulation ratio of ~87% in the VO2/Al2O3 epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

KAUST Repository

Singh, Devendra

2017-08-24

Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

KAUST Repository

Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

2017-01-01

Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

The Gaseous Phase as a Probe of the Astrophysical Solid Phase Chemistry

Energy Technology Data Exchange (ETDEWEB)

Abou Mrad, Ninette; Duvernay, Fabrice; Isnard, Robin; Chiavassa, Thierry; Danger, Grégoire, E-mail: gregoire.danger@univ-amu.fr [Aix-Marseille Université, PIIM UMR-CNRS 7345, F-13397 Marseille (France)

2017-09-10

In support of space missions and spectroscopic observations, laboratory experiments on ice analogs enable a better understanding of organic matter formation and evolution in astrophysical environments. Herein, we report the monitoring of the gaseous phase of processed astrophysical ice analogs to determine if the gaseous phase can elucidate the chemical mechanisms and dominant reaction pathways occurring in the solid ice subjected to vacuum ultra-violet (VUV) irradiation at low temperature and subsequently warmed. Simple (CH{sub 3}OH), binary (H{sub 2}O:CH{sub 3}OH, CH{sub 3}OH:NH{sub 3}), and ternary ice analogs (H{sub 2}O:CH{sub 3}OH:NH{sub 3}) were VUV-processed and warmed. The evolution of volatile organic compounds in the gaseous phase shows a direct link between their relative abundances in the gaseous phase, and the radical and thermal chemistries modifying the initial ice composition. The correlation between the gaseous and solid phases may play a crucial role in deciphering the organic composition of astrophysical objects. As an example, possible solid compositions of the comet Lovejoy are suggested using the abundances of organics in its comae.

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

DEFF Research Database (Denmark)

Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

2008-01-01

deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

Comparative solution and solid-phase glycosylations toward a disaccharide library

DEFF Research Database (Denmark)

Agoston, K.; Kröger, Lars; Agoston, Agnes

2009-01-01

A comparative study on solution-phase and solid-phase oligosaccharide synthesis was performed. A 16-member library containing all regioisomers of Glc-Glc, Glc-Gal, Gal-Glc, and Gal-Gal disaccharides was synthesized both in solution and on solid phase. The various reaction conditions for different...

Role of nanoparticles in analytical solid phase microextraction (SPME)

NARCIS (Netherlands)

Zielinska, K.; Leeuwen, van H.P.

2013-01-01

Solid phase microextraction (SPME) is commonly used to measure the free concentration of fairly hydrophobic substances in aqueous media on the basis of their partitioning between sample solution and a solid phase. Here we study the role of nanoparticles that may sorb the analyte in the sample

Analytical study of solids-gas two phase flow

International Nuclear Information System (INIS)

Hosaka, Minoru

1977-01-01

Fundamental studies were made on the hydrodynamics of solids-gas two-phase suspension flow, in which very small solid particles are mixed in a gas flow to enhance the heat transfer characteristics of gas cooled high temperature reactors. Especially, the pressure drop due to friction and the density distribution of solid particles are theoretically analyzed. The friction pressure drop of two-phase flow was analyzed based on the analytical result of the single-phase friction pressure drop. The calculated values of solid/gas friction factor as a function of solid/gas mass loading are compared with experimental results. Comparisons are made for Various combinations of Reynolds number and particle size. As for the particle density distribution, some factors affecting the non-uniformity of distribution were considered. The minimum of energy dispersion was obtained with the variational principle. The suspension density of particles was obtained as a function of relative distance from wall and was compared with experimental results. It is concluded that the distribution is much affected by the particle size and that the smaller particles are apt to gather near the wall. (Aoki, K.)

Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

KAUST Repository

Wang, Ping

2017-01-18

Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

Materials research for passive solar systems: Solid-state phase-change materials

Science.gov (United States)

Benson, D. K.; Webb, J. D.; Burrows, R. W.; McFadden, J. D. O.; Christensen, C.

1985-03-01

A set of solid-state phase-change materials is being evaluated for possible use in passive solar thermal energy storage systems. The most promising materials are organic solid solutions of pentaerythritol (C5H12O4), pentaglycerinve (C5H12O3), and neopentyl glycol (C5H12O2). Solid solution mixtures of these compounds can be tailored so that they exhibit solid-to-solid phase transformations at any desired temperature between 25 C and 188 C, and have latent heats of transformation etween 20 and 70 cal/g. Transformation temperatures, specific heats, and latent heats of transformation have been measured for a number of these materials. Limited cyclic experiments suggest that the solid solutions are stable. These phase-change materials exhibit large amounts of undercooling; however, the addition of certain nucleating agents as particulate dispersions in the solid phase-change material greatly reduces this effect. Computer simulations suggest that the use of an optimized solid-state phase-change material in a Trombe wall could provide better performance than a concrete Trombe wall four times thicker and nine times heavier.

The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

KAUST Repository

Shekhah, Osama; Eddaoudi, Mohamed

2013-01-01

Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

Solid-phase reductive amination for glycomic analysis.

Science.gov (United States)

Jiang, Kuan; Zhu, He; Xiao, Cong; Liu, Ding; Edmunds, Garrett; Wen, Liuqing; Ma, Cheng; Li, Jing; Wang, Peng George

2017-04-15

Reductive amination is an indispensable method for glycomic analysis, as it tremendously facilitates glycan characterization and quantification by coupling functional tags at the reducing ends of glycans. However, traditional in-solution derivatization based approach for the preparation of reductively aminated glycans is quite tedious and time-consuming. Here, a simpler and more efficient strategy termed solid-phase reductive amination was investigated. The general concept underlying this new approach is to streamline glycan extraction, derivatization, and purification on non-porous graphitized carbon sorbents. Neutral and sialylated standard glycans were utilized to test the feasibility of the solid-phase method. As results, almost complete labeling of those glycans with four common labels of aniline, 2-aminobenzamide (2-AB), 2-aminobenzoic acid (2-AA) and 2-amino-N-(2-aminoethyl)-benzamide (AEAB) was obtained, and negligible desialylation occurred during sample preparation. The labeled glycans derived from glycoproteins showed excellent reproducibility in high performance liquid chromatography (HPLC) and matrix assisted laser desorption ionization-time of flight mass spectrometry (MALDI-TOF MS) analysis. Direct comparisons based on fluorescent absorbance and relative quantification using isotopic labeling demonstrated that the solid-phase strategy enabled 20-30% increase in sample recovery. In short, the solid-phase strategy is simple, reproducible, efficient, and sensitive for glycan analysis. This method was also successfully applied for N-glycan profiling of HEK 293 cells with MALDI-TOF MS, showing its attractive application in the high-throughput analysis of mammalian glycome. Published by Elsevier B.V.

Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

Czech Academy of Sciences Publication Activity Database

Tyunina, Marina; Yao, L.; Chvostová, Dagmar; Dejneka, Alexandr; Kocourek, Tomáš; Jelínek, Miroslav; Trepakov, Vladimír; van Dijken, S.

2015-01-01

Roč. 16, č. 2 (2015), 026002 ISSN 1468-6996 R&D Projects: GA ČR GAP108/12/1941 Institutional support: RVO:68378271 Keywords : epitaxial growth * ferroelectric nanofilms Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.433, year: 2015

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

International Nuclear Information System (INIS)

Shojiki, Kanako; Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

2015-01-01

The metastable zincblende (ZB) phase in N-polar (0001 ¯ ) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated

Preparation and Characterization of Epitaxial VO2 Films on Sapphire Using Postepitaxial Topotaxy Route via Epitaxial V2O3 Films

Science.gov (United States)

Yamaguchi, Iwao; Manabe, Takaaki; Tsuchiya, Tetsuo; Nakajima, Tomohiko; Sohma, Mitsugu; Kumagai, Toshiya

2008-02-01

Epitaxial VO2 films were prepared on the C-planes of α-Al2O3 substrates by a metal organic deposition (MOD) process. It was difficult to obtain the single phase of (010)M-oriented VO2 films, in which the subscript M refers to the monoclinic indices, by the heat treatment of amorphous precursor films in the VO2-stable region after the pyrolysis of the coating solution. The product films consisted of discontinuous circular grains of 1-2 µm size on the substrate surface. Therefore, we prepared the (010)M-oriented epitaxial VO2 films using postepitaxial topotaxy (PET), that is, topotactic oxidation of (0001)-oriented epitaxial V2O3 films. First, epitaxial V2O3(0001) films were obtained by MOD starting with a vanadium naphthenate solution. Second, the epitaxial V2O3(0001) films were topotactically oxidized at 500 °C in an Ar-O2 gas mixture with pO2 = 10-4 atm to obtain (010)M-oriented epitaxial VO2 films. The epitaxial relationships were VO2(010)M ∥ α-Al2O3(0001) and VO2[100]M ∥ α-Al2O3[0110], [1010], [1100]. The VO2(010)M films exhibited metal-semiconductor transitions with hysteresis loops at 60-80 °C. The resistivity change before and after the transition of the VO2(010)M film oxidized for 6 h was three orders of magnitude.

Study on confirmation of Solid-Meal Lag Phase of Gastric Emptying

International Nuclear Information System (INIS)

Lee, Ji Young; Lee, Kyoung Soo; Kim, Chang Guhn; Juhng, Seon Kwan; Won, Jong Jin; Nah, Yong Ho

1991-01-01

The purpose of this study was to examine the existence of a lag phase of gastric emptying of solid meals. We studied solid phase gastric emptying in 26 normal subject using continuous data acquisition for 30 minutes. Each ingested a 300 g meal containing 99m Tc-labeled scrambled egg (solid 150 g, milk 150 ml). Lag phase was determined by 1) inspection of the gastric emptying curve 2) time to a 2% decrease in stomach activity 3) the time of visual appearance of duodenal activity on computer image. We concluded that solid meal lag phase exist.

Study on confirmation of Solid-Meal Lag Phase of Gastric Emptying

Energy Technology Data Exchange (ETDEWEB)

Lee, Ji Young; Lee, Kyoung Soo; Kim, Chang Guhn; Juhng, Seon Kwan; Won, Jong Jin; Nah, Yong Ho [Wonkwang University School of Medicine, Iksan (Korea, Republic of)

1991-07-15

The purpose of this study was to examine the existence of a lag phase of gastric emptying of solid meals. We studied solid phase gastric emptying in 26 normal subject using continuous data acquisition for 30 minutes. Each ingested a 300 g meal containing {sup 99m}Tc-labeled scrambled egg (solid 150 g, milk 150 ml). Lag phase was determined by 1) inspection of the gastric emptying curve 2) time to a 2% decrease in stomach activity 3) the time of visual appearance of duodenal activity on computer image. We concluded that solid meal lag phase exist.

Novel solid – solid phase change material based on polyethylene glycol and cellulose used for temperature stabilisation

Directory of Open Access Journals (Sweden)

Wojda Marta

2014-01-01

Full Text Available Thermal management is one of crucial issues in the development of modern electronic devices. In the recent years interest in phase change materials (PCMs as alternative cooling possibility has increased significantly. Preliminary results concerning the research into possibility of the use of solid-solid phase change materials (S-S PCMs for stabilisation temperature of electronic devices has been presented in the paper. Novel solid-solid phase change material based on polyethylene glycol and cellulose has been synthesized. Attempt to improve its thermal conductivity has been taken. Material has been synthesized for the purpose of stabilisation of temperature of electronic devices.

InAs film grown on Si(111) by metal organic vapor phase epitaxy

International Nuclear Information System (INIS)

Caroff, P; Jeppsson, M; Mandl, B; Wernersson, L-E; Wheeler, D; Seabaugh, A; Keplinger, M; Stangl, J; Bauer, G

2008-01-01

We report the successful growth of high quality InAs films directly on Si(111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 0 C for a thickness of 2 μm. We measured a high value of the electron mobility of 5100 cm 2 /Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization

Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Jumpei; Oka, Daichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); Hirose, Yasushi, E-mail: hirose@chem.s.u-tokyo.ac.jp; Yang, Chang; Fukumura, Tomoteru; Hasegawa, Tetsuya [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Nakao, Shoichiro [Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu, Kawasaki 213-0012 (Japan); CREST, Japan Science and Technology Agency, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033 (Japan); Harayama, Isao; Sekiba, Daiichiro [University of Tsukuba Tandem Accelerator Complex (UTTAC), 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577 (Japan)

2015-12-07

Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoO{sub x}N{sub y}) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoO{sub x}N{sub y} thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoO{sub x}N{sub y} thin films monotonically decreased from the order of 10{sup 5} Ω cm to 10{sup −4} Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoO{sub x}N{sub y} phase, which has not yet been reported in Co{sup 2+}/Co{sup 3+} mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoO{sub x}N{sub y} phase, on the 10{sup −3} Ω cm order, may have originated from the intermediate spin state of Co{sup 3+} stabilized by the lowered crystal field symmetry of the CoO{sub 6−n}N{sub n} octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoO{sub x}N{sub y} films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides.

Composition-induced structural, electrical, and magnetic phase transitions in AX-type mixed-valence cobalt oxynitride epitaxial thin films

International Nuclear Information System (INIS)

Takahashi, Jumpei; Oka, Daichi; Hirose, Yasushi; Yang, Chang; Fukumura, Tomoteru; Hasegawa, Tetsuya; Nakao, Shoichiro; Harayama, Isao; Sekiba, Daiichiro

2015-01-01

Synthesis of mid- to late-transition metal oxynitrides is generally difficult by conventional thermal ammonolysis because of thermal instability. In this letter, we synthesized epitaxial thin films of AX-type phase-pure cobalt oxynitrides (CoO x N y ) by using nitrogen-plasma-assisted pulsed laser deposition and investigated their structural, electrical, and magnetic properties. The CoO x N y thin films with 0 ≤ y/(x + y) ≤ 0.63 grown on MgO (100) substrates showed a structural phase transition from rock salt (RS) to zinc blend at the nitrogen content y/(x + y) ∼ 0.5. As the nitrogen content increased, the room-temperature electrical resistivity of the CoO x N y thin films monotonically decreased from the order of 10 5  Ω cm to 10 −4  Ω cm. Furthermore, we observed an insulator-to-metal transition at y/(x + y) ∼ 0.34 in the RS-CoO x N y phase, which has not yet been reported in Co 2+ /Co 3+ mixed-valence cobalt oxides with octahedral coordination. The low resistivity in the RS-CoO x N y phase, on the 10 −3  Ω cm order, may have originated from the intermediate spin state of Co 3+ stabilized by the lowered crystal field symmetry of the CoO 6−n N n octahedra (n = 1, 2,…5). Magnetization measurements suggested that a magnetic phase transition occurred in the RS-CoO x N y films during the insulator-to-metal transition. These results demonstrate that low-temperature epitaxial growth is a promising approach for exploring novel electronic functionalities in oxynitrides

Layered growth model and epitaxial growth structures for SiCAlN alloys

International Nuclear Information System (INIS)

Liu Zhaoqing; Ni Jun; Su Xiaoao; Dai Zhenhong

2009-01-01

Epitaxial growth structures for (SiC) 1-x (AlN) x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=1/6 ,1/5 ,1/4 ,1/3 , and 1/2 in the layered growth phase diagrams. We have also calculated the electronic properties of the short periodical SiCAlN alloys predicted by our layered growth model. The results show that various ordered structures of (SiC) 1-x (AlN) x alloys with the band gaps over a wide range are possible to be synthesized by epitaxial growth.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

Science.gov (United States)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

40 CFR Appendix A to Subpart Pppp... - Determination of Weight Volatile Matter Content and Weight Solids Content of Reactive Adhesives

Science.gov (United States)

2010-07-01

... Content and Weight Solids Content of Reactive Adhesives A Appendix A to Subpart PPPP of Part 63 Protection... Reactive Adhesives 1.0Applicability and Principle 1.1Applicability: This method applies to the... reactive adhesives. Reactive adhesives are composed, in large part, of monomers that react during the...

Amino-modified diamond as a durable stationary phase for solid-phase extraction.

Science.gov (United States)

Saini, Gaurav; Yang, Li; Lee, Milton L; Dadson, Andrew; Vail, Michael A; Linford, Matthew R

2008-08-15

We report the formation of a highly stable amino stationary phase on diamond and demonstrate its use in solid-phase extraction (SPE). This process consists of spontaneous and self-limiting adsorption of polyallylamine (PAAm) from aqueous solution onto oxidized diamond. Thermal curing under reduced pressure or chemical cross-linking with a diepoxide was shown to fix the polymer to the particles. The resulting adsorbents are stable under even extreme pH conditions (from at least pH 0-14) and significantly more stable than a commercially available amino SPE adsorbent. Coated diamond particles were characterized by X-ray photoelectron spectroscopy (XPS) and diffuse reflectance Fourier transform-infrared spectroscopy (DRIFT). Model silicon surfaces were characterized by spectroscopic ellipsometry and wetting. Solid-phase extraction was demonstrated using cholesterol, hexadecanedioic acid, and palmitoyloleoylphosphatidylcholine as analytes, and these results were compared to those obtained with commercially available materials. Breakthrough curves indicate that, as expected, porous diamond particles have higher analyte capacity than nonporous solid particles.

Adsorption-controlled growth of Bi{sub 4}Ti{sub 3}O{sub 12} by reactive MBE

Energy Technology Data Exchange (ETDEWEB)

Theis, C.D.; Yeh, J.; Schlom, D.G. [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005 (United States); Hawley, M.E.; Brown, G.W. [Center for Materials Science, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Jiang, J.C.; Pan, X.Q. [University of Michigan, Department of Materials Science and Engineering, Ann Arbor, Michigan 48109-2136 (United States)

1998-06-01

Adsorption-controlled conditions have been identified and utilized to grow epitaxial bismuth titanate thin films by reactive molecular beam epitaxy. Growth of stoichiometric, phase pure, c-axis oriented, epitaxial films is achieved by supplying a large overabundance of bismuth and ozone continuously to the surface of the depositing film. Titanium is supplied to the film in the form of shuttered bursts each containing a three monolayer dose of titanium to grow one formula unit of Bi{sub 4}Ti{sub 3}O{sub 12}. It is seen from measured film thickness, Rutherford backscattering spectrometry composition measurements, monitoring of reflection high-energy electron diffraction half-order intensity oscillations during growth, and {ital in situ} flux measurements using atomic absorption spectroscopy that at suitable temperature and ozone background pressure, the titanium sticking coefficient approaches one and the excess bismuth desorbs from the surface. Film growth proceeds by the formation of mounds whose step heights are predominantly integral multiples of a half-unit cell.{copyright} {ital 1998 American Institute of Physics.}

Investigation of the niobium-oxygen system under low pressure and between 550 K and 2350 K: solid solution, surface overlay and reactivity

International Nuclear Information System (INIS)

Jupille, Jacques

1974-09-01

This research thesis addresses the behaviour of transition metals when interacting with oxygen, more particularly in the case of phase formation, but also adsorption and desorption which occur in the case of interaction with low pressure oxygen. It focuses on the case of niobium in solid solution. After a description of phases present in the niobium-oxygen system, and a discussion of reactivities of oxygen and water vapour, the author describes the experimental methods (apparatus and installations, samples, measured values), discusses the study of the surface-volume transfer constant of the niobium-oxygen solution, and the niobium-oxygen interaction mechanisms at high (superior to 1700 K) and low (inferior to 1000 K) temperatures: oxide desorption, oxygen reaction kinetics

Solid-phase synthesis of molecularly imprinted nanoparticles.

Science.gov (United States)

Canfarotta, Francesco; Poma, Alessandro; Guerreiro, Antonio; Piletsky, Sergey

2016-03-01

Molecularly imprinted polymers (MIPs) are synthetic materials, generally based on acrylic or methacrylic monomers, that are polymerized in the presence of a specific target molecule called the 'template' and capable of rebinding selectively to this target molecule. They have the potential to be low-cost and robust alternatives to biomolecules such as antibodies and receptors. When prepared by traditional synthetic methods (i.e., with free template in solution), their usefulness has been limited by high binding site heterogeneity, the presence of residual template and the fact that the production methods are complex and difficult to standardize. To overcome some of these limitations, we developed a method for the synthesis of MIP nanoparticles (nanoMIPs) using an innovative solid-phase approach, which relies on the covalent immobilization of the template molecules onto the surface of a solid support (glass beads). The obtained nanoMIPs are virtually free of template and demonstrate high affinity for the target molecule (e.g., melamine and trypsin in our published work). Because of an affinity separation step performed on the solid phase after polymerization, poor binders and unproductive polymer are removed, so the final product has more uniform binding characteristics. The overall protocol, starting from the immobilization of the template onto the solid phase and including the purification and characterization of the nanoparticles, takes up to 1 week.

Solid phase extraction membrane

Science.gov (United States)

Carlson, Kurt C [Nashville, TN; Langer, Roger L [Hudson, WI

2002-11-05

A wet-laid, porous solid phase extraction sheet material that contains both active particles and binder and that possesses excellent wet strength is described. The binder is present in a relatively small amount while the particles are present in a relatively large amount. The sheet material is sufficiently strong and flexible so as to be pleatable so that, for example, it can be used in a cartridge device.

Reactive power compensator

Science.gov (United States)

El-Sharkawi, Mohamed A.; Venkata, Subrahmanyam S.; Chen, Mingliang; Andexler, George; Huang, Tony

1992-01-01

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation.

Reactive power compensator

Energy Technology Data Exchange (ETDEWEB)

El-Sharkawi, Mohamed A. (Renton, WA); Venkata, Subrahmanyam S. (Woodinville, WA); Chen, Mingliang (Kirkland, WA); Andexler, George (Everett, WA); Huang, Tony (Seattle, WA)

1992-01-01

A system and method for determining and providing reactive power compensation for an inductive load. A reactive power compensator (50,50') monitors the voltage and current flowing through each of three distribution lines (52a, 52b, 52c), which are supplying three-phase power to one or more inductive loads. Using signals indicative of the current on each of these lines when the voltage waveform on the line crosses zero, the reactive power compensator determines a reactive power compensator capacitance that must be connected to the lines to maintain a desired VAR level, power factor, or line voltage. Alternatively, an operator can manually select a specific capacitance for connection to each line, or the capacitance can be selected based on a time schedule. The reactive power compensator produces control signals, which are coupled through optical fibers (102/106) to a switch driver (110, 110') to select specific compensation capacitors (112) for connections to each line. The switch driver develops triggering signals that are supplied to a plurality of series-connected solid state switches (350), which control charge current in one direction in respect to ground for each compensation capacitor. During each cycle, current flows from ground to charge the capacitors as the voltage on the line begins to go negative from its positive peak value. The triggering signals are applied to gate the solid state switches into a conducting state when the potential on the lines and on the capacitors reaches a negative peak value, thereby minimizing both the potential difference and across the charge current through the switches when they begin to conduct. Any harmonic distortion on the potential and current carried by the lines is filtered out from the current and potential signals used by the reactive power compensator so that it does not affect the determination of the required reactive compensation.

Solid phase syntheses of oligoureas

Energy Technology Data Exchange (ETDEWEB)

Burgess, K.; Linthicum, D.S.; Russell, D.H.; Shin, H.; Shitangkoon, A.; Totani, R.; Zhang, A.J.; Ibarzo, J. [Texas A& M Univ., College Station, TX (United States)

1997-02-19

Isocyanates 7 were formed from monoprotected diamines 3 or 6, which in turn can be easily prepared from commercially available N-BOC- or N-FMOC-protected amino acid derivatives. Isocyanates 7, formed in situ, could be coupled directly to a solid support functionalized with amine groups or to amino acids anchored on resins using CH{sub 2}Cl{sub 2} as solvent and an 11 h coupling time at 25 {degree}C. Such couplings afforded peptidomimetics with an N-phthaloyl group at the N-terminus. The optimal conditions identified for removal of the N-phthaloyl group were to use 60% hydrazine in DMF for 1-3 h. Several sequences of amino acids coupled to ureas (`peptidic ureas`) and of sequential urea units (`oligoureas`) were prepared via solid phase syntheses and isolated by HPLC. Partition coefficients were measured for two of these peptidomimetics, and their water solubilities were found to be similar to the corresponding peptides. A small library of 160 analogues of the YGGFL-amide sequence was prepared via Houghten`s tea bag methodology. This library was tested for binding to the anti-{beta}-endorphin monoclonal antibody. Overall, this paper describes methodology for solid phase syntheses of oligourea derivatives with side chains corresponding to some of the protein amino acids. The chemistry involved is ideal for high-throughput syntheses and screening operations. 51 refs., 3 figs., 2 tabs.

All solid-state SBS phase conjugate mirror

Science.gov (United States)

Dane, C.B.; Hackel, L.A.

1999-03-09

A stimulated Brillouin scattering (SBS) phase conjugate laser mirror uses a solid-state nonlinear gain medium instead of the conventional liquid or high pressure gas medium. The concept has been effectively demonstrated using common optical-grade fused silica. An energy threshold of 2.5 mJ and a slope efficiency of over 90% were achieved, resulting in an overall energy reflectivity of >80% for 15 ns, 1 um laser pulses. The use of solid-state materials is enabled by a multi-pass resonant architecture which suppresses transient fluctuations that would otherwise result in damage to the SBS medium. This all solid state phase conjugator is safer, more reliable, and more easily manufactured than prior art designs. It allows nonlinear wavefront correction to be implemented in industrial and defense laser systems whose operating environments would preclude the introduction of potentially hazardous liquids or high pressure gases. 8 figs.

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Directory of Open Access Journals (Sweden)

A.Y. Polyakov

2017-03-01

Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

Solid-Phase S-Alkylation Promoted by Molecular Sieves.

Science.gov (United States)

Calce, Enrica; Leone, Marilisa; Mercurio, Flavia Anna; Monfregola, Luca; De Luca, Stefania

2015-11-20

A solid-phase S-alkylation procedure to introduce chemical modification on the cysteine sulfhydryl group of a peptidyl resin is reported. The reaction is promoted by activated molecular sieves and consists of a solid-solid process, since both the catalyst and the substrate are in a solid state. The procedure was revealed to be efficient and versatile, particularly when used in combination with the solution S-alkylation approach, allowing for the introduction of different molecular diversities on the same peptide molecule.

Linkage of biomolecules to solid phases for immunoassay

International Nuclear Information System (INIS)

Chapman, R.S.

1998-01-01

Topics covered by this lecture include a brief review of the principal methods of linkage of biomolecules to solid phase matrices. Copies of the key self explanatory slides are presented as figures together with reprints of two publications by the author dealing with a preferred chemistry for the covalent linkage of antibodies to hydroxyl and amino functional groups and the effects of changes in solid phase matrix and antibody coupling chemistry on the performance of a typical excess reagent immunoassay for thyroid stimulating hormone

Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

International Nuclear Information System (INIS)

Turner, G.W.; Choi, H.K.; Calawa, D.R.

1994-01-01

Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

Fabrication of highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals by solid-state dewetting of Si ultrathin layer

Energy Technology Data Exchange (ETDEWEB)

Naito, Muneyuki, E-mail: naito22@center.konan-u.ac.jp [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko [Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501 (Japan); Nakao, Motoi [Graduate School of Engineering, Kyushu Institute of Technology, Sensui, Tobata, Kitakyushu, Fukuoka 804-8550 (Japan); Sudoh, Koichi [The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

2013-07-31

In this paper, highly oriented nanocrystals of Fe{sub 3}Si with a D0{sub 3} structure are fabricated on SiO{sub 2} using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO{sub 2} layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe{sub 3}Si nanocrystals with D0{sub 3}, B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe{sub 3}Si nanocrystals with a D0{sub 3} single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0{sub 3}-Fe{sub 3}Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0{sub 3} structure after post-deposition annealing.

Phase diagram of a Lennard-Jones solid

International Nuclear Information System (INIS)

Choi, Y.; Ree, T.; Ree, F.H.

1993-01-01

A phase diagram of a Lennard-Jones solid at kT/ε≥0.8 is constructed by our recent perturbation theory. It shows the stability of the face-centered-cubic phase except within a small pressure and temperature domain, where the hexagonal-close packed phase may occur. The theory predicts anharmonic contributions to the Helmholtz free energy (important to the crystal stability) in good agreement with Monte Carlo data

Biological treatment of soils contaminated with hydrophobic organics using slurry and solid phase techniques

International Nuclear Information System (INIS)

Cassidy, D.P.; Irvine, R.L.

1995-01-01

Both slurry-phase and solid-phase bioremediation are effective ex situ soil decontamination methods. Slurry is energy intensive relative to solid-phase treatment, but provides homogenization and uniform nutrient distribution. Limited contaminant bioavailability at concentrations above the required cleanup level reduces biodegradation rates and renders solid phase bioremediation more cost effective than complete treatment in a bioslurry reactor. Slurrying followed by solid-phase bioremediation combines the advantages and minimizes the weaknesses of each treatment method when used alone. A biological treatment system consisting of slurrying followed by aeration in solid phase bioreactors was developed and tested in the laboratory using a silty clay load contaminated with diesel fuel. The first set of experiments was designed to determine the impact of the water content and mixing time during slurrying on the ate and extent of contaminant removal in continuously aerated solid phase bioreactors. The second set of experiments compared the volatile and total diesel fuel removal in solid phase bioreactors using periodic and continuous aeration strategies

One unit-cell seed layer induced epitaxial growth of heavily nitrogen doped anatase TiO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Chen, T L; Hirose, Y; Hitosugi, T; Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)], E-mail: chen@ksp.or.jp

2008-03-21

We present a novel way to obtain heavily nitrogen doped anatase TiO{sub 2} films by using a solid-state nitrogen source. Epitaxial growth of the films was realized by introducing one unit-cell seed layer, which was indicated by reflection high-energy electron diffraction as intensity oscillation. Results of x-ray diffraction and x-ray photoelectron spectroscopy confirmed that the films were in the anatase phase heavily doped with nitrogen of {approx}15 at%. The films obtained exhibited considerable narrowing of the optical bandgap, resulting in an enhancement of absorption in the visible-light region. (fast track communication)

MOLECULARLY IMPRINTED SOLID PHASE EXTRACTION FOR TRACE ANALYSIS OF DIAZINON IN DRINKING WATER

Directory of Open Access Journals (Sweden)

M. Rahiminejad ، S. J. Shahtaheri ، M. R. Ganjali ، A. Rahimi Forushani ، F. Golbabaei

2009-04-01

Full Text Available Amongst organophosphate pesticides, the one most widely used and common environmental contaminant is diazinon; thus methods for its trace analysis in environmental samples must be developed. Use of diazinon imprinted polymers such as sorbents in solid phase extraction, is a prominent and novel application area of molecular imprinted polymers. For diazinon extraction, high performance liquid chromatography analysis was demonstrated in this study. During optimization of the molecular imprinted solid phase extraction procedure for efficient solid phase extraction of diazinon, Plackett-Burman design was conducted. Eight experimental factors with critical influence on molecular imprinted solid phase extraction performance were selected, and 12 different experimental runs based on Plackett-Burman design were carried out. The applicability of diazinon imprinted polymers as the sorbent in solid phase extraction, presented obtained good recoveries of diazinon from LC-grade water. An increase in pH caused an increase in the recovery on molecular imprinted solid phase extraction. From these results, the optimal molecular imprinted solid phase extraction procedure was as follows: solid phase extraction packing with 100 mg diazinon imprinted polymers; conditioning with 5 mL of methanol and 6 mL of LC-grade water; sample loading containing diazinon (pH=10; washing with 1 mL of LC-grade water, 1 mL LC- grade water containing 30% acetonitrile and 0.5 mL of acetonitrile, respectively; eluting with 1 mL of methanol containing 2% acetic acid. The percentage recoveries obtained by the optimized molecular imprinted solid phase extraction were more than 90% with drinking water spiked at different trace levels of diazinon. Generally speaking, the molecular imprinted solid phase extraction procedure and subsequent high performance liquid chromatography analysis can be a relatively fast and proper approach for qualitative and quantitative analysis of diazinon in

Phase-field model of vapor-liquid-solid nanowire growth

Science.gov (United States)

Wang, Nan; Upmanyu, Moneesh; Karma, Alain

2018-03-01

We present a multiphase-field model to describe quantitatively nanowire growth by the vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three nonconserved order parameters that distinguish the vapor, liquid, and solid phases and describe the energetic properties of various interfaces, including arbitrary forms of anisotropic γ plots for the solid-vapor and solid-liquid interfaces. The evolution equations for those order parameters describe basic kinetic processes including the rapid (quasi-instantaneous) equilibration of the liquid catalyst to a droplet shape with constant mean curvature, the slow incorporation of growth atoms at the droplet surface, and crystallization within the droplet. The standard constraint that the sum of the phase fields equals unity and the conservation of the number of catalyst atoms, which relates the catalyst volume to the concentration of growth atoms inside the droplet, are handled via separate Lagrange multipliers. An analysis of the model is presented that rigorously maps the phase-field equations to a desired set of sharp-interface equations for the evolution of the phase boundaries under the constraint of force balance at three-phase junctions (triple points) given by the Young-Herring relation that includes torque term related to the anisotropy of the solid-liquid and solid-vapor interface excess free energies. Numerical examples of growth in two dimensions are presented for the simplest case of vanishing crystalline anisotropy and the more realistic case of a solid-liquid γ plot with cusped minima corresponding to two sets of (10 ) and (11 ) facets. The simulations reproduce many of the salient features of nanowire growth observed experimentally, including growth normal to the substrate with tapering of the side walls, transitions between different growth orientations, and crawling growth along the substrate. They also reproduce different observed relationships between the nanowire growth

Solid phase microextraction.

Science.gov (United States)

Pawliszyn, J

2001-01-01

Solid Phase Microextraction (SPME) uses a small volume of sorbent dispersed typically on the surface of small fibres, to isolate and concentrate analytes from sample matrix. After contact with sample, analytes are absorbed or adsorbed by the fibre phase (depending on the nature of the coating) until an equilibrium is reached in the system. The amount of an analyte extracted by the coating at equilibrium is determined by the magnitude of the partition coefficient of the analyte between the sample matrix and the coating material. After the extraction step, the fibres are transferred, with the help of a syringe-like handling device, to analytical instrument, for separation and quantitation of target analytes. This technique integrates sampling, extraction and sample introduction and is a simple way of facilitating on-site monitoring. Applications of this technique include environmental monitoring, industrial hygiene, process monitoring, clinical, forensic, food, flavour, fragrance and drug analyses, in laboratory and on-site analysis.

Development of Epitaxial GaN Films for RF Communications, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The primary objective of this SBIR is to develop epitaxial GaN films with threading dislocation density less than 10^6 cm^-2. We propose an innovative approach...

Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

KAUST Repository

Duan, Xiaofei; Mi, Wenbo; Guo, Zaibing; Bai, Haili

2012-01-01

Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

KAUST Repository

Duan, Xiaofei

2012-05-01

Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

International Nuclear Information System (INIS)

McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

1989-01-01

This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Science.gov (United States)

Sekiguchi, Kazuki; Shirakawa, Hiroki; Chokawa, Kenta; Araidai, Masaaki; Kangawa, Yoshihiro; Kakimoto, Koichi; Shiraishi, Kenji

2018-04-01

We analyzed the decomposition of Ga(CH3)3 (TMG) during the metal organic vapor phase epitaxy (MOVPE) of GaN on the basis of first-principles calculations and thermodynamic analysis. We performed activation energy calculations of TMG decomposition and determined the main reaction processes of TMG during GaN MOVPE. We found that TMG reacts with the H2 carrier gas and that (CH3)2GaH is generated after the desorption of the methyl group. Next, (CH3)2GaH decomposes into (CH3)GaH2 and this decomposes into GaH3. Finally, GaH3 becomes GaH. In the MOVPE growth of GaN, TMG decomposes into GaH by the successive desorption of its methyl groups. The results presented here concur with recent high-resolution mass spectroscopy results.

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

DEFF Research Database (Denmark)

Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

2017-01-01

We report a novel approach for metal organic vapor phase epitaxy of (Al)GaN heterostructures on Si substrates. An approximately 90–100 nm thick SiC buffer layer is synthesized using the reaction between Si substrate and CO gas. Highresolution transmission electron microscopy reveals sharp...

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

Energy Technology Data Exchange (ETDEWEB)

Balzer, F., E-mail: fbalzer@mci.sdu.dk [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Sun, R. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Parisi, J. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany); Rubahn, H.-G. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Lützen, A. [University of Bonn, Kekulé Institute of Organic Chemistry and Biochemistry, Gerhard-Domagk-Str. 1, D-53121 Bonn (Germany); Schiek, M. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany)

2015-12-31

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

International Nuclear Information System (INIS)

Balzer, F.; Sun, R.; Parisi, J.; Rubahn, H.-G.; Lützen, A.; Schiek, M.

2015-01-01

The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

Origin of the near-band-edge photoluminescence in ZnO nanorods realised by vapour phase epitaxy and aqueous chemical growth

Energy Technology Data Exchange (ETDEWEB)

Bekeny, C.; Hilker, B.; Wischmeier, L.; Voss, T. [IFP, University of Bremen, P.O Box 330440, 28334 Bremen (Germany); Postels, B.; Mofor, A.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, P.O Box 3329, 38023 Braunschweig (Germany)

2007-07-01

Well established high temperature growth techniques like the vapourliquid-solid (VLS: 1100 C) and vapour-phase-epitaxy (VPE: 800 C) have been successfully optimized while the low-temperature aqueous chemical growth (ACG: 90 C) is being extended to yield large-scale high quality ZnO nanorods. Here, a detailed and systematic photoluminescence (PL) study is presented to understand the microscopic processes responsible for the near-band-edge (NBE) emission in nanorods obtained from these processes. For the ACG samples, the as-grown nanorods show relatively broad NBE emission (15 meV) attributed to the presence of large donor densities. After annealing in various atmospheres at {proportional_to}800 C, a significant reduction of the linewidth ({proportional_to}4 meV) and even the appearance of relatively sharp excitonic transitions is explained by the drastic reduction of the donor density. In contrast, the as-grown VPE and VLS samples exhibit well-resolved and sharp peaks resulting from exciton-related transitions. There is a shift in the room-temperature PL peak for VLS and VPE samples and is shown to result from contributions of the free exciton peak, its first and second order phonon replicas and not due to quantum confinement and or laser heating as assumed in literature.

Solid state phase change materials for thermal energy storage in passive solar heated buildings

Science.gov (United States)

Benson, D. K.; Christensen, C.

1983-11-01

A set of solid state phase change materials was evaluated for possible use in passive solar thermal energy storage systems. The most promising materials are organic solid solutions of pentaerythritol, pentaglycerine and neopentyl glycol. Solid solution mixtures of these compounds can be tailored so that they exhibit solid-to-solid phase transformations at any desired temperature within the range from less than 25 deg to 188 deg. Thermophysical properties such as thermal conductivity, density and volumetric expansion were measured. Computer simulations were used to predict the performance of various Trombe wall designs incorporating solid state phase change materials. Optimum performance was found to be sensitive to the choice of phase change temperatures and to the thermal conductivity of the phase change material. A molecular mechanism of the solid state phase transition is proposed and supported by infrared spectroscopic evidence.

Choosing conditions of liquid-phase epitaxy of Insub(1-x)Gasub(x)P solid solutions by statistical methods of experiment planning

International Nuclear Information System (INIS)

Batyrev, N.I.; Vigdorovich, V.N.; Selin, A.A.

1978-01-01

Insub(1-x)Gasub(x)P(x approximately 0.7) solid solution layers obtained with the help of the phase diagram of the In-InP-GaP system have been studied using statistical methods of experiment planning. The liquidus, baric and solidus surfaces have been plotted for the In-InP-GaP ternary system (In content from 85 to 100 mol.%). Analysis of the results obtained makes it possible to determine the optimum compositions of the melt (x=0.67-0.74) and building-up temperatures (800-850 deg) to obtain epitaxyal Insub(1-x)Gasub(x)P layers

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

The synthesis and properties of the phases obtained by solid-solid reactions

Directory of Open Access Journals (Sweden)

Blonska-Tabero A.

2008-01-01

Full Text Available The presented work encompasses the subject of the studies and the results obtained over the last years by the research workers of the Department of Inorganic Chemistry. They include mainly the studies on the reactivity of metal oxides, searching for new phases in binary and ternary systems of metal oxides as well as describing phase relations establishing in such systems. They also encompass works on the extensive characteristics of physico-chemical properties of the newly obtained compounds.

The reactive solid-gas flow of a fluidized bed for UO2 conversion

International Nuclear Information System (INIS)

Juanico, L.E.

1991-01-01

The reactive solid-gas flow of a fluidized bed for UO 2 conversion was modeled. The sedimentation-reaction process was treated using the drift-flux equations. Also, the associated pressure transient due to the reaction gas release was analyzed. An experiment was carried out to compare the results, and pressure transient was numerically simulated, reaching interesting conclusions. (Author) [es

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose; Ahn, Sung-Jin; Crumlin, Ethan; Orikasa, Yuki; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

2010-01-01

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Catalytic Activity Enhancement for Oxygen Reduction on Epitaxial Perovskite Thin Films for Solid-Oxide Fuel Cells

KAUST Repository

la O', Gerardo Jose

2010-06-22

Figure Presented The active ingredient: La0.8Sr 0.2CoO3-δ (LSC) epitaxial thin films are prepared on (001 )-oriented yttria-stabilized zirconia (YSZ) single crystals with a gadolinium-doped ceria (GDC) buffer layer (see picture). The LSC epitaxial films exhibit better oxygen reduction kinetics than bulk LSC. The enhanced activity is attributed in part to higher oxygen nonstoichiometry. © 2010 Wiley-VCH Verlag GmbH & Co. KCaA, Weinheim.

Finite-deformation phase-field chemomechanics for multiphase, multicomponent solids

Science.gov (United States)

Svendsen, Bob; Shanthraj, Pratheek; Raabe, Dierk

2018-03-01

The purpose of this work is the development of a framework for the formulation of geometrically non-linear inelastic chemomechanical models for a mixture of multiple chemical components diffusing among multiple transforming solid phases. The focus here is on general model formulation. No specific model or application is pursued in this work. To this end, basic balance and constitutive relations from non-equilibrium thermodynamics and continuum mixture theory are combined with a phase-field-based description of multicomponent solid phases and their interfaces. Solid phase modeling is based in particular on a chemomechanical free energy and stress relaxation via the evolution of phase-specific concentration fields, order-parameter fields (e.g., related to chemical ordering, structural ordering, or defects), and local internal variables. At the mixture level, differences or contrasts in phase composition and phase local deformation in phase interface regions are treated as mixture internal variables. In this context, various phase interface models are considered. In the equilibrium limit, phase contrasts in composition and local deformation in the phase interface region are determined via bulk energy minimization. On the chemical side, the equilibrium limit of the current model formulation reduces to a multicomponent, multiphase, generalization of existing two-phase binary alloy interface equilibrium conditions (e.g., KKS). On the mechanical side, the equilibrium limit of one interface model considered represents a multiphase generalization of Reuss-Sachs conditions from mechanical homogenization theory. Analogously, other interface models considered represent generalizations of interface equilibrium conditions consistent with laminate and sharp-interface theory. In the last part of the work, selected existing models are formulated within the current framework as special cases and discussed in detail.

Epitaxial phase diagrams of SrTiO3, CaTiO3, and SrHfO3: Computational investigation including the role of antiferrodistortive and A -site displacement modes

Science.gov (United States)

Angsten, Thomas; Asta, Mark

2018-04-01

Ground-state epitaxial phase diagrams are calculated by density functional theory (DFT) for SrTiO3, CaTiO3, and SrHfO3 perovskite-based compounds, accounting for the effects of antiferrodistortive and A -site displacement modes. Biaxial strain states corresponding to epitaxial growth of (001)-oriented films are considered, with misfit strains ranging between -4 % and 4%. Ground-state structures are determined using a computational procedure in which input structures for DFT optimizations are identified as local minima in expansions of the total energy with respect to strain and soft-mode degrees of freedom. Comparison to results of previous DFT studies demonstrates the effectiveness of the computational approach in predicting ground-state phases. The calculated results show that antiferrodistortive octahedral rotations and associated A -site displacement modes act to suppress polarization and reduce the epitaxial strain energy. A projection of calculated atomic displacements in the ground-state epitaxial structures onto soft-mode eigenvectors shows that three ferroelectric and six antiferrodistortive displacement modes are dominant at all misfit strains considered, with the relative contributions from each varying systematically with the strain. Additional A -site displacement modes contribute to the atomic displacements in CaTiO3 and SrHfO3, which serve to optimize the coordination of the undersized A -site cation.

Biogasification of solid wastes by two-phase anaerobic fermentation

International Nuclear Information System (INIS)

Ghosh, S.; Vieitez, E.R.; Liu, T.; Kato, Y.

1997-01-01

Municipal, industrial and agricultural solid wastes, and biomass deposits, cause large-scale pollution of land and water. Gaseous products of waste decomposition pollute the air and contribute to global warming. This paper describes the development of a two-phase fermentation system that alleviates methanogenic inhibition encountered with high-solids feed, accelerates methane fermentation of the solid bed, and captures methane (renewable energy) for captive use to reduce global warming. The innovative system consisted of a solid bed reactor packed with simulated solid waste at a density of 160 kg/m 3 and operated with recirculation of the percolated culture (bioleachate) through the bed. A rapid onset of solids hydrolysis, acidification, denitrification and hydrogen gas formation was observed under these operating conditions. However, these fermentative reactions stopped at a total fatty acids concentration of 13,000 mg/l (as acetic) at pH 5, with a reactor head-gas composition of 75 percent carbon dioxide, 20 percent nitrogen, 2 percent hydrogen and 3 percent methane. Fermentation inhibition was alleviated by moving the bioleachate to a separate methane-phase fermenter, and recycling methanogenic effluents at pH 7 to the solid bed. Coupled operation of the two reactors promoted methanogenic conversion of the high-solids feed. (author)

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

Science.gov (United States)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

solid phase extraction method for selective determination

African Journals Online (AJOL)

FATOKI

determination of phthalate ester plasticizers in rivers and marine water samples. Of the ... samples that receive effluent from industries that use phthalate esters. ... Keywords Phthalates, Plasticizers, Solid Phase Gas Chromatography.

stability analysis of a three-phase solid-state var compensator

African Journals Online (AJOL)

2012-11-03

Nov 3, 2012 ... solid-state devices (bipolar junction transistor (BJT), insulated-gate bipolar transistor (IGBT), gate-turn- off thyristor (GTO) and power MOSFET has elim- inated these problems. The voltage source inverter. (VSI) employing any one of these devices is an efficient equipment for reactive power compensation or ...

Letter: Modeling reactive shock waves in heterogeneous solids at the continuum level with stochastic differential equations

Science.gov (United States)

Kittell, D. E.; Yarrington, C. D.; Lechman, J. B.; Baer, M. R.

2018-05-01

A new paradigm is introduced for modeling reactive shock waves in heterogeneous solids at the continuum level. Inspired by the probability density function methods from turbulent reactive flows, it is hypothesized that the unreacted material microstructures lead to a distribution of heat release rates from chemical reaction. Fluctuations in heat release, rather than velocity, are coupled to the reactive Euler equations which are then solved via the Riemann problem. A numerically efficient, one-dimensional hydrocode is used to demonstrate this new approach, and simulation results of a representative impact calculation (inert flyer into explosive target) are discussed.

Liquid-phase and solid-phase radioimmunoassay with herpes simplex virus type 1 nucleocapsids

International Nuclear Information System (INIS)

Bystricka, M.; Rajcani, J.; Libikova, H.; Sabo, A.; Foeldes, O.; Sadlon, J.

1985-01-01

Liquid-phase radioimmunoassay and solid-phase radioimmunoassay are described using 125 I-labelled or immobilized nucleocapsids (NC) of herpes simplex virus (HSV) type1. These techniques appeared sensitive and specific for quantitation of HSV-NC antigens and corresponding antibodies. (author)

Effect of point disorder on superconducting properties of ultrathin epitaxial NbN films

International Nuclear Information System (INIS)

Jesudasan, John; Bagwe, Vivas; Mondal, Mintu; Chand, Madhavi; Kamlapure, Anand; Pai, S.P.; Raychaudhuri, Pratap; Mishra, Archana

2009-01-01

We synthesized homogeneously disordered epitaxial NbN films on MgO(100) substrates using reactive dc magnetron sputtering. The disorder of the films is characterized by the Loffe-Regel parameter k F I. The superconducting properties are studied through transport, ac-susceptibility measurements and electron tunneling. The superconducting transition temperature is studied as a function of thickness for films of different disorder. In the case of the less disordered film, there is a smooth decrease in T c with decreasing thickness but for the more disordered film, the T c shows a sharp decrease to zero at a threshold thickness. The superconducting energy gap is studied via planar tunnel junctions. It is found that for the less disordered films, the temperature dependence of the gap follows the BCS variation but for the more disordered ones, there is a significant deviation from the BCS curve, and the gap remains finite at T c indicating that the superconducting transition is either governed by phase fluctuations or a first order phase transition. (author)

Biological treatment of soils contaminated with hydrophobic organics using slurry- and solid-phase techniques

Science.gov (United States)

Cassidy, Daniel H.; Irvine, Robert L.

1995-10-01

Both slurry-phase and solid-phase bioremediation are effective ex situ soil decontamination methods. Slurrying is energy intensive relative to solid-phase treatment, but provides homogenization and uniform nutrient distribution. Limited contaminant bioavailability at concentrations above the required cleanup level reduces biodegradation rates and renders solid phase bioremediation more cost effective than complete treatment in a bio-slurry reactor. Slurrying followed by solid-phase bioremediation combines the advantages and minimizes the weaknesses of each treatment method when used alone. A biological treatment system consisting of slurrying followed by aeration in solid phase bioreactors was developed and tested in the laboratory using a silty clay loam contaminated with diesel fuel. The first set of experiments was designed to determine the impact of the water content and mixing time during slurrying on the rate an extent of contaminant removal in continuously aerated solid phase bioreactors. The second set of experiments compared the volatile and total diesel fuel removal in solid phase bioreactors using periodic and continuous aeration strategies. Results showed that slurrying for 1.5 hours at a water content less than saturation markedly increased the rate and extent of contaminant biodegradation in the solid phase bioreactors compared with soil having no slurry pretreatment. Slurrying the soil at or above its saturation moisture content resulted in lengthy dewatering times which prohibited aeration, thereby delaying the onset of biological treatment in the solid phase bioreactors. Results also showed that properly operated periodic aeration can provide less volatile contaminant removal and a grater fraction of biological contaminant removal than continuous aeration.

Approaching the Dirac point in high-mobility multilayer epitaxial graphene

Czech Academy of Sciences Publication Activity Database

Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

2008-01-01

Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA -CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

The Pictet-Spengler reaction in solid-phase combinatorial chemistry

DEFF Research Database (Denmark)

Nielsen, Thomas E; Diness, Frederik; Meldal, Morten

2003-01-01

The Pictet-Spengler reaction is an important reaction for the generation of tetrahydro-beta-carbolines and tetrahydroisoquinoline ring systems, which exhibit a range of biological and pharmacological properties. This review covers the solid-phase Pictet-Spengler reaction, as employed in solid...

Solid-phase classical complement activation by C-reactive protein (CRP) is inhibited by fluid-phase CRP-C1q interaction

International Nuclear Information System (INIS)

Sjoewall, Christopher; Wetteroe, Jonas; Bengtsson, Torbjoern; Askendal, Agneta; Almroth, Gunnel; Skogh, Thomas; Tengvall, Pentti

2007-01-01

C-reactive protein (CRP) interacts with phosphorylcholine (PC), Fcγ receptors, complement factor C1q and cell nuclear constituents, yet its biological roles are insufficiently understood. The aim was to characterize CRP-induced complement activation by ellipsometry. PC conjugated with keyhole limpet hemocyanin (PC-KLH) was immobilized to cross-linked fibrinogen. A low-CRP serum with different amounts of added CRP was exposed to the PC-surfaces. The total serum protein deposition was quantified and deposition of IgG, C1q, C3c, C4, factor H, and CRP detected with polyclonal antibodies. The binding of serum CRP to PC-KLH dose-dependently triggered activation of the classical pathway. Unexpectedly, the activation was efficiently down-regulated at CRP levels >150 mg/L. Using radial immunodiffusion, CRP-C1q interaction was observed in serum samples with high CRP concentrations. We propose that the underlying mechanism depends on fluid-phase interaction between C1q and CRP. This might constitute another level of complement regulation, which has implications for systemic lupus erythematosus where CRP is often low despite flare-ups

Phase 2, Solid waste retrieval strategy

International Nuclear Information System (INIS)

Johnson, D.M.

1994-01-01

Solid TRU retrieval, Phase 1 is scheduled to commence operation in 1998 at 218W-4C-T01 and complete recovery of the waste containers in 2001. Phase 2 Retrieval will recover the remaining buried TRU waste to be retrieved and provide the preliminary characterization by non-destructive means to allow interim storage until processing for disposal. This document reports on researching the characterization documents to determine the types of wastes to be retrieved and where located, waste configurations, conditions, and required methods for retrieval. Also included are discussions of wastes encompassed by Phase 2 for which there are valid reasons to not retrieve

Phase 2, Solid waste retrieval strategy

Energy Technology Data Exchange (ETDEWEB)

Johnson, D.M.

1994-09-29

Solid TRU retrieval, Phase 1 is scheduled to commence operation in 1998 at 218W-4C-T01 and complete recovery of the waste containers in 2001. Phase 2 Retrieval will recover the remaining buried TRU waste to be retrieved and provide the preliminary characterization by non-destructive means to allow interim storage until processing for disposal. This document reports on researching the characterization documents to determine the types of wastes to be retrieved and where located, waste configurations, conditions, and required methods for retrieval. Also included are discussions of wastes encompassed by Phase 2 for which there are valid reasons to not retrieve.

Nanosize stabilization of cubic and tetragonal phases in reactive plasma synthesized zirconia powders

Energy Technology Data Exchange (ETDEWEB)

Jayakumar, S., E-mail: sjayakumar.physics@gmail.com [Research and Development Centre, Bharathiar University, Coimbatore 641 014 (India); Department of Physics, Pollachi Institute of Engineering and Technology, Pollachi 642 205 (India); Ananthapadmanabhan, P.V.; Thiyagarajan, T.K. [Laser and Plasma Technology Division, BARC, Trombay, Mumbai 400 085 (India); Perumal, K. [Vision for Wisdom, Temple of Consciousness, Aliyar 642 101 (India); Mishra, S.C. [Department of Metallurgical and Materials Engg, National Institute of Technology, Rourkela 769 008 (India); Suresh, G. [Department of Physics, Park College of Engineering and Technology, Coimbatore 641 659 (India); Su, L.T.; Tok, A.I.Y. [School of Materials Science and Engg, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639 798 (Singapore)

2013-06-15

Pure zirconium oxide powders with particle size 2–33 nm are synthesized by reactive plasma processing. Transmission electron microscopy investigation of these particles revealed size dependent behavior for their phase stabilization. The monoclinic phase is found to be stable when particle size is ≥20 nm; Tetragonal is found to be stabilized in the range of 7–20 nm and as the particle size decreases to 6 nm and less, the cubic phase is stabilized. - Highlights: ► Direct conversion of micron-sized zirconium hydride powder to single crystal ZrO{sub 2} nanopowder. ► Size dependent stabilization of cubic, tetragonal and monoclinic phases in the reactive plasma synthesized ZrO{sub 2} nanopowder. ► Transmission electron microscopic investigation to identify particles of different sizes and their corresponding phase structure.

The role of solid-solid phase transitions in mantle convection

Science.gov (United States)

Faccenda, Manuele; Dal Zilio, Luca

2017-01-01

With changing pressure and temperature conditions, downwelling and upwelling crustal and mantle rocks experience several solid-solid phase transitions that affect the mineral physical properties owing to structural changes in the crystal lattice and to the absorption or release of latent heat. Variations in density, together with phase boundary deflections related to the non-null reaction slope, generate important buoyancy forces that add to those induced by thermal perturbations. These buoyancy forces are proportional to the density contrast between reactant and product phases, their volume fraction, the slope and the sharpness of the reaction, and affect the style of mantle convection depending on the system composition. In a homogeneous pyrolitic mantle there is little tendency for layered convection, with slabs that may stagnate in the transition zone because of the positive buoyancy caused by post-spinel and post-ilmenite reactions, and hot plumes that are accelerated by phase transformations in the 600-800 km depth range. By adding chemical and mineralogical heterogeneities as on Earth, phase transitions introduce bulk rock and volatiles filtering effects that generate a compositional gradient throughout the entire mantle, with levels that are enriched or depleted in one or more of these components. Phase transitions often lead to mechanical softening or hardening that can be related to a different intrinsic mechanical behaviour and volatile solubility of the product phases, the heating or cooling associated with latent heat, and the transient grain size reduction in downwelling cold material. Strong variations in viscosity would enhance layered mantle convection, causing slab stagnation and plume ponding. At low temperatures and relatively dry conditions, reactions are delayed due to the sluggish kinetics, so that non-equilibrium phase aggregates can persist metastably beyond the equilibrium phase boundary. Survival of low-density metastable olivine

Co-pyrolysis of coal with organic solids

Energy Technology Data Exchange (ETDEWEB)

Straka, P.; Buchtele, J. [Inst. of Rock Structure and Mechanics, Prague (Czechoslovakia)

1995-12-01

The co-pyrolysis of high volatile A bituminous coal with solid organic materials (proteins, cellulose, polyisoprene, polystyrene, polyethylene-glycolterephtalate-PEGT) at a high temperature conditions was investigated. Aim of the work was to evaluate, firstly, the changes of the texture and of the porous system of solid phase after high temperature treatment in presence of different types of macromolecular solids, secondly, properties and composition of the tar and gas. Considered organic solids are important waste components. During their co-pyrolysis the high volatile bituminous coal acts as a hydrogen donor in the temperature rank 220-480{degrees}C. In the rank 500- 1000{degrees}C the solid phase is formed. The co-pyrolysis was carried out at heating rate 3 K/min. It was found that an amount of organic solid (5-10%) affects important changes in the optical texture forms of solid phase, in the pore distribution and in the internal surface area. Transport large pores volume decreases in presence of PEGT, polystyrene and cellulose and increases in presence of proteins and polyisoprene. (image analysis measurements show that the tendency of coal to create coarse pores during co-pyrolysis is very strong and increases with increasing amount of organic solid in blend). An addition of considered materials changes the sorption ability (methylene blue test, iodine adsorption test), moreover, the reactivity of the solid phase.

Phase transitions in solids under high pressure

CERN Document Server

Blank, Vladimir Davydovich

2013-01-01

Phase equilibria and kinetics of phase transformations under high pressureEquipment and methods for the study of phase transformations in solids at high pressuresPhase transformations of carbon and boron nitride at high pressure and deformation under pressurePhase transitions in Si and Ge at high pressure and deformation under pressurePolymorphic α-ω transformation in titanium, zirconium and zirconium-titanium alloys Phase transformations in iron and its alloys at high pressure Phase transformations in gallium and ceriumOn the possible polymorphic transformations in transition metals under pressurePressure-induced polymorphic transformations in АIBVII compoundsPhase transformations in AIIBVI and AIIIBV semiconductor compoundsEffect of pressure on the kinetics of phase transformations in iron alloysTransformations during deformation at high pressure Effects due to phase transformations at high pressureKinetics and hysteresis in high-temperature polymorphic transformations under pressureHysteresis and kineti...

GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

Energy Technology Data Exchange (ETDEWEB)

Ortiz Vazquez, F E; Mishurnyi, V A; Gorbatchev, A Yu; De Anda, F [Universidad Autonoma de San Luis Potosi, Instituto de Investigation en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico); Elyukhin, V A, E-mail: fcoe_ov@prodigy.net.m, E-mail: andre@cactus.iico.uaslp.m [CINVESTAV-IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico D.F., CP 07360 (Mexico)

2009-05-01

The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown Ga{sub x}In{sub 1-z}As QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the Ga{sub x}In{sub -x} As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

Dynamic nonlinearity in epitaxial BaTiO.sub.3./sub. films

Czech Academy of Sciences Publication Activity Database

Tyunina, Marina; Savinov, Maxim

2016-01-01

Roč. 94, č. 5 (2016), 1-6, č. článku 054109. ISSN 2469-9950 R&D Projects: GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : dynamic nonlinearity * epitaxial * BaTiO 3 films Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.836, year: 2016

Scintillation efficiency and X-ray imaging with the RE-Doped LuAG thin films grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Tous, Jan; Blazek, Karel; Kucera, Miroslav; Nikl, Martin; Mares, Jiri A.

2012-01-01

Very thin scintillator imaging plates have recently become of great interest. In high resolution X-ray radiography, very thin scintillator layers of about 5–20 μm are used to achieve 2D-spatial resolutions below 1 μm. Thin screens can be prepared by mechanical polishing from single crystals or by epitaxial growth on single-crystal substrates using the Liquid Phase Epitaxy technique (LPE). Other types of screens (e.g. deposited powder) do no reach required spatial resolutions. This work compares LPE-grown YAG and LuAG scintillator films doped with different rare earth ions (Cerium, Terbium and Europium). Two different fluxes were used in the LPE growth procedure. These LPE films are compared to YAG:Ce and LuAG:Ce screens made from bulk single crystals. Relative light yield was detected by a highly sensitive CCD camera. Scintillator screens were excited by a micro-focus X-ray source and the generated light was gathered by the CCD camera’s optical system. Scintillator 2D-homogeneity is examined in an X-ray imaging setup also using the CCD camera.

Applications of Molecular Dynamics, Monte Carlo and Metadynamics Simulations Using ReaxFF Reactive Force Fields to Fluid/Solid Interfaces

Science.gov (United States)

Raju, Muralikrishna

The interaction of dense fluids (water, polar organic solvents, room temperature ionic liquids, etc.) with solid substrates controls many chemical processes encountered in nature and industry. The key features of fluid-solid interfaces (FSIs) are the high mobility and often reactivity of the fluid phase, and the structural control provided by the solid phase. In this dissertation we apply molecular modeling methods to study FSIs in the following systems: 1. Dissociation of water on titania surfaces. We studied the adsorption and dissociation of water at 300 K on the following TiO2 surfaces: anatase (101), (100), (112), (001) and rutile (110) at various water coverages, using a recently developed ReaxFF reactive force field. The molecular and dissociative adsorption configurations predicted by ReaxFF for various water coverages agree with previous theoretical studies and experiment. 2. Mechanisms of Oriented Attachment in TiO2 nanocrystals. Oriented attachment (OA) of nanocrystals is now widely recognized as a key process in the solution-phase growth of hierarchical nanostructures. However, the microscopic origins of OA remain unclear. Using the same ReaxFF Ti/O/H reactive force field employed in the previous study, we perform molecular dynamics simulations to study the aggregation of various titanium dioxide (anatase) nanocrystals in vacuum and humid environments. 3. Li interactions in carbon based materials. Graphitic carbon is still the most ubiquitously used anode material in Li-ion batteries. In spite of its ubiquity, there are few theoretical studies that fully capture the energetics and kinetics of Li in graphite and related nanostructures at experimentally relevant length/time-scales and Li-ion concentrations. In this study we describe development and application of a ReaxFF reactive force field to describe Li interactions in perfect and defective carbon based materials using atomistic simulations. We develop force-field parameters for Li-C systems using van

Solid Phase Extraction and Spectrophotometric Determination of ...

African Journals Online (AJOL)

NJD

2005-04-15

Apr 15, 2005 ... to the economy and has significant industrial applications. The development of a ... Waters Solid Phase Extraction (SPE) device (the device can carry out twenty ... HPLC grade dimethyl formamide (DMF) (Fisher. Corporation ...

Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

Science.gov (United States)

Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

2009-04-01

Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry

Science.gov (United States)

Tellekamp, M. Brooks; Greenlee, Jordan D.; Shank, Joshua C.; Doolittle, W. Alan

2015-09-01

In order to consistently grow high quality niobium oxides and lithium niobium oxides, a novel solid/liquid state oxygen source, LiClO4, has been implemented in a molecular beam epitaxy (MBE) system. LiClO4 is shown to decompose into both molecular and atomic oxygen upon heating. This allows oxidation rates similar to that of molecular oxygen but at a reduced overall beam flux, quantified by in situ Auger analysis. LiClO4 operation is decomposition limited to less than 400 °C, and other material limitations are identified. The design of a custom near-ambient NbCl5 effusion cell is presented, which improves both short and long term stability. Films of Nb oxidation state +2, +3, and +5 are grown using these new tools, including the multi-functional sub-oxide LiNbO2.

Pressure Effects on Solid State Phase Transformation of Aluminium Bronze in Cooling Process

International Nuclear Information System (INIS)

Hai-Yan, Wang; Jian-Hua, Liu; Gui-Rong, Peng; Yan, Chen; Yu-Wen, Liu; Fei, Li; Wen-Kui, Wang

2009-01-01

Effects of high pressure (6 GPa) on the solid state phase transformation kinetic parameters of aluminum bronze during the cooling process are investigated, based on the measurement and calculation of its solid state phase transformation temperature, duration and activation energy and the observation of its microstructures. The results show that high pressure treatment can reduce the solid phase transformation temperature and activation energy in the cooling process and can shorten the phase transformation duration, which is favorable when forming fine-grained aluminum bronze

Epitaxial YBa2Cu3O7-δ/Sr2RuO4 heterostructures

International Nuclear Information System (INIS)

Schlom, D.G.; Merritt, B.A.; Madhavan, S.

1997-01-01

The anisotropic oxide superconductors YBa 2 Cu 3 O 7-δ and Sr 2 RuO 4 have been epitaxially combined in various ways (c-axis on c-axis, c-axis on a-axis, and a-axis on a-axis) though the use of appropriate substrates. Phase-pure a-axis oriented or c-axis oriented epitaxial Sr 2 RuO 4 films were grown by pulsed laser deposition. YBa 2 Cu 3 O 7-δ films were then grown on both orientations of Sr 2 RuO 4 films and the resulting epitaxy was characterized

A thermodynamic stability of bulk and epitaxial CdHgTe, ZnHgTe and MnHgTe solid solutions

International Nuclear Information System (INIS)

Dejbuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.Eh.

2005-01-01

A thermodynamics of Cd 1-x Hg x Te, Zn x Hg 1-x Te and Mg x Hg 1-x Te alloys has been investigated for a delta-lattice parameter model. The phase diagrams obtained show the stability of Cd 1-x Hg x Te, Zn x Hg 1-x Te in the whole range of compositions, alongside with a miscibility gap for Mn x Hg 1-x Te being of 0.35 x Hg 1-x Te/CdTe and Mn x Hg 1-x Te/Cd 0.96 Zn 0.04 Te epitaxial films result in lowering critical temperatures and narrowing the miscibility gap [ru

Solid phase extraction method for determination of mitragynine in ...

African Journals Online (AJOL)

All rights reserved. ... 1Department of Pharmacology, 2Department of Applied Science, 3Police Forensic Science Center 10, Yala 95000, 4Natural ... Purpose: To develop a solid phase extraction (SPE) method that utilizes reverse-phase high.

Photoluminescence investigation of thick GaN films grown on Si substrates by hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Yang, M.; Ahn, H. S.; Chang, J. H.; Yi, S. N.; Kim, K. H.; Kim, H.; Kim, S. W.

2003-01-01

The optical properties of thick GaN films grown by hydried vapor phase epitaxy (HVPE) using a low-temperature intermediate GaN buffer layer grown on a (111) Si substrate with a ZnO thin film were investigated by using photoluminescence (PL) measurement at 300 K and 77 K. The strong donor bound exciton (DBE) at 357 nm with a full width at half maximum (FWHM) of 15 meV was observed at 77 K. The value of 15 meV is extremely narrow for GaN grown on Si substrate by HVPE. An impurity-related peak was also observed at 367 nm. The origin of impurity was investigated using Auger spectroscopy.

A multi-phase equation of state for solid and liquid lead

International Nuclear Information System (INIS)

Robinson, C.M.

2004-01-01

This paper considers a multi-phase equation of state for solid and liquid lead. The thermodynamically consistent equation of state is constructed by calculating separate equations of state for the solid and liquid phases. The melt curve is the curve in the pressure, temperature plane where the Gibb's free energy of the solid and liquid phases are equal. In each phase a complete equation of state is obtained using the assumptions that the specific heat capacity is constant and that the Grueneisen parameter is proportional to the specific volume. The parameters for the equation of state are obtained from experimental data. In particular they are chosen to match melt curve and principal Hugoniot data. Predictions are made for the shock pressure required for melt to occur on shock and release

Solid-phase equilibria on Pluto's surface

Science.gov (United States)

Tan, Sugata P.; Kargel, Jeffrey S.

2018-03-01

Pluto's surface is covered by volatile ices that are in equilibrium with the atmosphere. Multicomponent phase equilibria may be calculated using a thermodynamic equation of state and, without additional assumptions, result in methane-rich and nitrogen-rich solid phases. The former is formed at temperature range between the atmospheric pressure-dependent sublimation and condensation points, while the latter is formed at temperatures lower than the sublimation point. The results, calculated for the observed 11 μbar atmospheric pressure and composition, are consistent with recent work derived from observations by New Horizons.

High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

International Nuclear Information System (INIS)

Liu, C.Y.; Yoon, S.F.; Sun, Z.Z.; Yew, K.C.

2006-01-01

Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm 2 from a GaInNAs QD laser (50x1700 μm 2 ) at 10 deg. C. High-temperature operation up to 65 deg. C was also demonstrated from an unbonded GaInNAs QD laser (50x1060 μm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60 deg. C

Mechanism and microstructures in Ga2O3 pseudomartensitic solid phase transition.

Science.gov (United States)

Zhu, Sheng-Cai; Guan, Shu-Hui; Liu, Zhi-Pan

2016-07-21

Solid-to-solid phase transition, although widely exploited in making new materials, challenges persistently our current theory for predicting its complex kinetics and rich microstructures in transition. The Ga2O3α-β phase transformation represents such a common but complex reaction with marked change in cation coordination and crystal density, which was known to yield either amorphous or crystalline products under different synthetic conditions. Here we, via recently developed stochastic surface walking (SSW) method, resolve for the first time the atomistic mechanism of Ga2O3α-β phase transformation, the pathway of which turns out to be the first reaction pathway ever determined for a new type of diffusionless solid phase transition, namely, pseudomartensitic phase transition. We demonstrate that the sensitivity of product crystallinity is caused by its multi-step, multi-type reaction pathway, which bypasses seven intermediate phases and involves all types of elementary solid phase transition steps, i.e. the shearing of O layers (martensitic type), the local diffusion of Ga atoms (reconstructive type) and the significant lattice dilation (dilation type). While the migration of Ga atoms across the close-packed O layers is the rate-determining step and yields "amorphous-like" high energy intermediates, the shearing of O layers contributes to the formation of coherent biphase junctions and the presence of a crystallographic orientation relation, (001)α//(201[combining macron])β + [120]α//[13[combining macron]2]β. Our experiment using high-resolution transmission electron microscopy further confirms the theoretical predictions on the atomic structure of biphase junction and the formation of (201[combining macron])β twin, and also discovers the late occurrence of lattice expansion in the nascent β phase that grows out from the parent α phase. By distinguishing pseudomartensitic transition from other types of mechanisms, we propose general rules to predict the

Solid-phase synthesis of complex and pharmacologically interesting heterocycles

DEFF Research Database (Denmark)

Nielsen, Thomas Eiland

2009-01-01

Efficient routes for the creation of heterocycles continue to be one of the primary goals for solid-phase synthesis. Recent advances in this field rely most notably on transition-metal-catalysis and N-acyliminium chemistry to mediate a range of cyclization processes for the generation of compounds...... with significant structural complexity and diversity. This review describes some of the most systematic solid-phase approaches that are potentially suited for pharmaceutical applications, that is, the methods described are useful for the synthesis of compound collections, and exhibit tunable stereochemistry...

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

International Nuclear Information System (INIS)

Glas, F; Patriarche, G; Harmand, J C

2010-01-01

We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

Indigenous microbial capability in solid manure residues to start-up solid-phase anaerobic digesters.

Science.gov (United States)

Yap, S D; Astals, S; Jensen, P D; Batstone, D J; Tait, S

2017-06-01

Batch solid-phase anaerobic digestion is a technology for sustainable on-farm treatment of solid residues, but is an emerging technology that is yet to be optimised with respect to start-up and inoculation. In the present study, spent bedding from two piggeries (site A and B) were batch digested at total solids (TS) concentration of 5, 10 and 20% at mesophilic (37°C) and thermophilic (55°C) temperatures, without adding an external inoculum. The results showed that the indigenous microbial community present in spent bedding was able to recover the full methane potential of the bedding (140±5 and 227±6L CH 4 kgVS fed -1 for site A and B, respectively), but longer treatment times were required than for digestion with an added external inoculum. Nonetheless, at high solid loadings (i.e. TS level>10%), the digestion performance was affected by chemical inhibition due to ammonia and/or humic acid. Thermophilic temperatures did not influence digestion performance but did increase start-up failure risk. Further, inoculation of residues from the batch digestion to subsequent batch enhanced start-up and achieved full methane potential recovery of the bedding. Inoculation with liquid residue (leachate) was preferred over a solid residue, to preserve treatment capacity for fresh substrate. Overall, the study highlighted that indigenous microbial community in the solid manure residue was capable of recovering full methane potential and that solid-phase digestion was ultimately limited by chemical inhibition rather than lack of suitable microbial community. Copyright © 2017 Elsevier Ltd. All rights reserved.

α-Sn and β-Sn precipitates in annealed epitaxial Si_0.95Sn_0.05

DEFF Research Database (Denmark)

Fyhn, M.F.; Chevallier, J.; Larsen, A.N.

1999-01-01

-Sn and beta-Sn crystallites. The presence of alpha-Sn at temperatures far above the bulk alpha beta transition temperature is explained by interface and pressure effects; the latter is likely to be due to the difference in thermal expansion of the precipitates and the matrix.......-temperature molecular-beam epitaxy on Si (001) and relaxed Si1-xGex substrates. Two different phases of solid Sn were identified in the annealed layers: the semiconductor phase, alpha-Sn, and the metallic phase beta-Sn The precipitates were found to consist of either only beta-Sn or to contain crystallites of both...... solid Sn phases. The orientations, the sizes and the relative number densities of the alpha-Sn and beta-Sn crystallites were investigated. in situ heating and cooling experiments were performed in the transmission electron microscope to study the melting and solidification characteristics of the alpha...

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Science.gov (United States)

Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

2017-01-01

GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya

2017-05-10

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

KAUST Repository

Chernikova, Valeriya; Shekhah, Osama; Spanopoulos, Ioannis; Trikalitis, Pantelis N.; Eddaoudi, Mohamed

2017-01-01

Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

On the study of the solid-solid phase transformation of TlBiTe2

International Nuclear Information System (INIS)

Chrissafis, K.; Vinga, E.S.; Paraskevopoulos, K.M.; Polychroniadis, E.K.

2003-01-01

The narrow gap semiconductor TlBiTe 2 undergoes a solid-solid phase transformation from the rhombohedral (D 3d ) to the cubic (O h ) phase. The present paper deals with the study of this phase transformation combining the results of Differential Scanning Calorimetry (DSC) and Transmission Electron Microscopy (TEM). It has been found that during heating the transformation is an athermal activated process, which can be described only by a combination of more than one processes while during cooling it exhibits an expectable thermal hysteresis due to the volume difference. The results of the kinetic analysis combined with the electron microscopy findings, supported also by the Fourier Transform Infrared (FTIR) spectroscopy ones, lead to the conclusion that TlBiTe 2 undergoes a multiple-step, displacive, martensitic type transformation. (Abstract Copyright [2003], Wiley Periodicals, Inc.)

High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

Science.gov (United States)

Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

2018-02-01

It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

GaN:Co epitaxial layers grown by MOVPE

Czech Academy of Sciences Publication Activity Database

Šimek, P.; Sedmidubský, D.; Klímová, K.; Mikulics, M.; Maryško, Miroslav; Veselý, M.; Jurek, Karel; Sofer, Z.

2015-01-01

Roč. 44, Mar (2015), 62-68 ISSN 0022-0248 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics Subject RIV: CA - Inorganic Chemistry Impact factor: 1.462, year: 2015

The improvement of all-solid-state electrochromic devices fabricated with the reactive sputter and cathodic arc technology

Directory of Open Access Journals (Sweden)

Min-Chuan Wang

2016-11-01

Full Text Available The all-solid-state electrochromic device (ECD with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS and cathodic vacuum arc plasma (CVAP technology has been developed for smart electrochromic (EC glass application. The EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The ion conductor layer Ta2O5 deposited by the CVAP technology has provided the better porous material structure for ion transportation and showed 1.76 times ion conductivity than devices with all sputtering process. At the same time, the EC layer WO3 and NiO deposited by the reactive DCMS have also provided the high quality and uniform characteristic to overcome the surface roughness effect of the CVAP ion conductor layer in multilayer device structure. The all-solid-state ECD with the CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT of 55% at 550nm and a faster-switching speed. Furthermore, the lower equipment cost and higher deposition rate could be achieved by the application of CVAP technology.

Topotactic Solid-State Metal Hydride Reductions of Sr2MnO4.

Science.gov (United States)

Hernden, Bradley C; Lussier, Joey A; Bieringer, Mario

2015-05-04

We report novel details regarding the reactivity and mechanism of the solid-state topotactic reduction of Sr2MnO4 using a series of solid-state metal hydrides. Comprehensive details describing the active reducing species are reported and comments on the reductive mechanism are provided, where it is shown that more than one electron is being donated by H(-). Commonly used solid-state hydrides LiH, NaH, and CaH2, were characterized in terms of reducing power. In addition the unexplored solid-state hydrides MgH2, SrH2, and BaH2 are evaluated as potential solid-state reductants and characterized in terms of their reductive reactivities. These 6 group I and II metal hydrides show the following trend in terms of reactivity: MgH2 < SrH2 < LiH ≈ CaH2 ≈ BaH2 < NaH. The order of the reductants are discussed in terms of metal electronegativity and bond strengths. NaH and the novel use of SrH2 allowed for targeted synthesis of reduced Sr2MnO(4-x) (0 ≤ x ≤ 0.37) phases. The enhanced control during synthesis demonstrated by this soft chemistry approach has allowed for a more comprehensive and systematic evaluation of Sr2MnO(4-x) phases than previously reported phases prepared by high temperature methods. Sr2MnO3.63(1) has for the first time been shown to be monoclinic by powder X-ray diffraction and the oxidative monoclinic to tetragonal transition occurs at 450 °C.

Phase rule calculations and the thermodynamics of reactive systems under chemical equilibrium

Directory of Open Access Journals (Sweden)

PLATT G. M.

1999-01-01

Full Text Available In this paper, we examine the resolution of some phase rule problems within the context of multiple chemical equilibrium reactions, using cubic equations of state and an activity coefficient model. Bubble and dew reactive surfaces, reactive azeotropic loci and reactive critical loci are generated and presented in graphical form. Also isobaric bubble and dew reactive enthalpy loci, which may be useful in the modeling of reactive distillation operations, are depicted. All the formalism here employed is developed within the coordinate transformation of Ung and Doherty, which is appropriate for equilibrium reactive or multireactive systems. The major contribution of this work is the determination of critical loci for reactive or multireactive equilibrium systems. Since it is known that for some class of chemical reactions the kinetics and product distribution exhibit high sensitivity to pressure near criticality, the present study may be useful as a predicting tool in these cases if the chemical equilibrium condition is not too far from the real phenomenon.

Electrical, optical, and structural properties of GaN films prepared by hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Polyakov, A.Y.; Smirnov, N.B.; Yakimov, E.B.; Usikov, A.S.; Helava, H.; Shcherbachev, K.D.; Govorkov, A.V.; Makarov, Yu N.; Lee, In-Hwan

2014-01-01

Highlights: • GaN films are prepared by hydride vapor phase epitaxy (HVPE). • Residual donors and deep traps show a minimum density versus growth temperature. • This minimum is located close to the HVPE growth temperature of 950 °C. • Good crystalline GaN with residual donor density < 10 16 cm −3 can be grown at 950 °C. - Abstract: Two sets of undoped GaN films with the thickness of 10–20 μm were prepared by hydride vapor phase epitaxy (HVPE) and characterized by capacitance–voltage (C–V) profiling, microcathodoluminescence (MCL) spectra measurements, MCL imaging, electron beam induced current (EBIC) imaging, EBIC dependence on accelerating voltage, deep levels transient spectroscopy, high resolution X-ray diffraction measurements. The difference in growth conditions was mainly related to the lower (850 °C, group 1) or higher (950 °C, group 2) growth temperature. Both groups of samples showed similar crystalline quality with the dislocation density close to 10 8 cm −2 , but very different electrical and optical properties. In group 1 samples the residual donors concentration was ∼10 17 cm −3 or higher, the MCL spectra were dominated by the band-edge luminescence, and the diffusion length of charge carriers was close to 0.1 μm. Group 2 samples had a 2–4.5 μm thick highly resistive layer on top, for which MCL spectra were determined by green, yellow and red defect bands, and the diffusion length was 1.5 times higher than in group 1. We also present brief results of growth at the “standard” HVPE growth temperature of 1050 °C that show the presence of a minimum in the net donor concentration and deep traps density as a function of the growth temperature. Possible reasons for the observed results are discussed in terms of the electrical compensation of residual donors by deep traps

Phase effects in the radiation chemistry of orientationally disordered crystals

International Nuclear Information System (INIS)

McCormick, D.G.; Sherman, L.R.; Klingen, T.J.

1980-01-01

In the investigation of the radiolysis of 1-bromoadamantane, three gaseous and six solid products were observed as a function of total dose. Although the same products were found in both the α- and β-phases of solid 1-bromo-adamantane, the G-values of these products were markedly different in the two phases, e.g. an efficient abstraction reaction for the formation of HBr in the β-phase was found to be absent in the α-phase. The results obtained in this study are discussed in terms of mechanisms based on the diffusional mobility of the reactive intermediates in the two mesophases, with the diffusional mobility of the reactive intermediates in the two mesophases being related to the entropy release in the formation of each mesophase. (author)

Gas phase reactive collisions, experimental approach

Directory of Open Access Journals (Sweden)

Canosa A.

2012-01-01

Full Text Available Since 1937 when the first molecule in space has been identified, more than 150 molecules have been detected. Understanding the fate of these molecules requires having a perfect view of their photochemistry and reactivity with other partners. It is then crucial to identify the main processes that will produce and destroy them. In this chapter, a general view of experimental techniques able to deliver gas phase chemical kinetics data at low and very low temperatures will be presented. These techniques apply to the study of reactions between neutral reactants on the one hand and reactions involving charge species on the other hand.

Phase equilibria in chemical reactive fluid mixtures

International Nuclear Information System (INIS)

Maurer, Gerd

2011-01-01

Downstream processing is a major part of nearly all processes in the chemical industries. Most separation processes in the chemical (and related) industries for fluid mixtures are based on phase equilibrium phenomena. The majority of separation processes can be modelled assuming that chemical reactions are of no (or very minor) importance, i.e., assuming that the overall speciation remains unchanged during a separation process. However, there are also a large number of industrially important processes where the thermodynamic properties are influenced by chemical reactions. The phase equilibrium of chemical reactive mixtures has been a major research area of the author's group over nearly 40 years. In this contribution, three examples from that research are discussed. The first example deals with the vapour phase dimerisation of carboxylic acids and its consequences on phase equilibrium phenomena and phase equilibrium predictions. The second example deals with the solubility of sour gases (e.g., carbon dioxide and sulfur dioxide) in aqueous solutions of ammonia. That topic has been of interest for many years, e.g., in relation with the gasification and liquefaction of coal and, more recently, with the removal of carbon dioxide from flue gas in the 'chilled ammonia process'. The third example deals with phase equilibrium phenomena in aqueous solutions of polyelectrolytes. It deals with the phenomenon of 'counter ion condensation' and methods to model the Gibbs free energy of such solutions.

SOLID-PHASE PEPTIDE SYNTHESIS OF ISOTOCIN WITH AMIDE ...

African Journals Online (AJOL)

SOLID-PHASE PEPTIDE SYNTHESIS OF ISOTOCIN WITH AMIDE OF ASPARAGINE PROTECTED WITH 1-TETRALINYL. TRIFLUOROMETHANESULPHONIC ACID (TFMSA) DEPROTECTION, CLEAVAGE AND AIR OXIDATION OF MERCAPTO GROUPS TO DISULPHIDE.

Solid-State NMR Investigation of Drug-Excipient Interactions and Phase Behavior in Indomethacin-Eudragit E Amorphous Solid Dispersions.

Science.gov (United States)

Lubach, Joseph W; Hau, Jonathan

2018-02-20

To investigate the nature of drug-excipient interactions between indomethacin (IMC) and methacrylate copolymer Eudragit® E (EE) in the amorphous state, and evaluate the effects on formulation and stability of these amorphous systems. Amorphous solid dispersions containing IMC and EE were spray dried with drug loadings from 20% to 90%. PXRD was used to confirm the amorphous nature of the dispersions, and DSC was used to measure glass transition temperatures (T g ). 13 C and 15 N solid-state NMR was utilized to investigate changes in local structure and protonation state, while 1 H T 1 and T 1ρ relaxation measurements were used to probe miscibility and phase behavior of the dispersions. T g values for IMC-EE solid dispersions showed significant positive deviations from predicted values in the drug loading range of 40-90%, indicating a relatively strong drug-excipient interaction. 15 N solid-state NMR exhibited a change in protonation state of the EE basic amine, with two distinct populations for the EE amine at -360.7 ppm (unprotonated) and -344.4 ppm (protonated). Additionally, 1 H relaxation measurements showed phase separation at high drug load, indicating an amorphous ionic complex and free IMC-rich phase. PXRD data showed all ASDs up to 90% drug load remained physically stable after 2 years. 15 N solid-state NMR experiments show a change in protonation state of EE, indicating that an ionic complex indeed forms between IMC and EE in amorphous solid dispersions. Phase behavior was determined to exhibit nanoscale phase separation at high drug load between the amorphous ionic complex and excess free IMC.

Bioinspired magnetite synthesis via solid precursor phases

NARCIS (Netherlands)

Lenders, J.J.M.; Mirabello, G.; Sommerdijk, N.A.J.M.

2016-01-01

Living organisms often exploit solid but poorly ordered mineral phases as precursors in the biomineralization of their inorganic body parts. Generally speaking, such precursor-based approaches allow the organisms-without the need of high supersaturation levels-to accumulate significant quantities of

Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

Science.gov (United States)

Rodak, L. E.; Korakakis, D.

2011-04-01

This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires

NARCIS (Netherlands)

Sciacca, Beniamino; Mann, Sander A.; Tichelaar, Frans D.; Zandbergen, Henny W.; Van Huis, Marijn A.; Garnett, Erik C.

2014-01-01

The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here

Co-gasification of bituminous coal and hydrochar derived from municipal solid waste: Reactivity and synergy.

Science.gov (United States)

Wei, Juntao; Guo, Qinghua; He, Qing; Ding, Lu; Yoshikawa, Kunio; Yu, Guangsuo

2017-09-01

In this work, the influences of gasification temperature and blended ratio on co-gasification reactivity and synergy of Shenfu bituminous coal (SF) and municipal solid waste-derived hydrochar (HTC) were investigated using TGA. Additionally, active alkaline and alkaline earth metal (AAEM) transformation during co-gasification was quantitatively analyzed by inductively coupled plasma optical emission spectrometer for correlating synergy on co-gasification reactivity. The results showed that higher char gasification reactivity existed at higher HTC char proportion and gasification temperature, and the main synergy behaviour on co-gasification reactivity was performed as synergistic effect. Enhanced synergistic effect at lower temperature was mainly resulted from more obviously inhibiting the primary AAEM (i.e. active Ca) transformation, and weak synergistic effect still existed at higher temperature since more active K with prominent catalysis was retained. Furthermore, more active HTC-derived AAEM remaining in SF sample during co-gasification would lead to enhanced synergistic effect as HTC char proportion increased. Copyright © 2017 Elsevier Ltd. All rights reserved.

Deposition and characterisation of epitaxial oxide thin films for SOFCs

KAUST Repository

Santiso, José

2010-10-24

This paper reviews the recent advances in the use of thin films, mostly epitaxial, for fundamental studies of materials for solid oxide fuel cell (SOFC) applications. These studies include the influence of film microstructure, crystal orientation and strain in oxide ionic conducting materials used as electrolytes, such as fluorites, and in mixed ionic and electronic conducting materials used as electrodes, typically oxides with perovskite or perovskite-related layered structures. The recent effort towards the enhancement of the electrochemical performance of SOFC materials through the deposition of artificial film heterostructures is also presented. These thin films have been engineered at a nanoscale level, such as the case of epitaxial multilayers or nanocomposite cermet materials. The recent progress in the implementation of thin films in SOFC devices is also reported. © 2010 Springer-Verlag.

Investigation of binary solid phases by calorimetry and kinetic modelling

OpenAIRE

Matovic, M.

2007-01-01

The traditional methods for the determination of liquid-solid phase diagrams are based on the assumption that the overall equilibrium is established between the phases. However, the result of the crystallization of a liquid mixture will typically be a non-equilibrium or metastable state of the solid. For a proper description of the crystallization process the equilibrium approach is insufficient and a kinetic approach is actually required. In this work, we show that during slow crystallizatio...

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

Energy Technology Data Exchange (ETDEWEB)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir; Bregolin, Felipe L.; Hübner, Rene; Voelskow, Matthias; Helm, Manfred; Skorupa, Wolfgang [Helmholtz-Zentrum Dresden - Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany)

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of the III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.

Epitaxial growth of mixed conducting layered Ruddlesden–Popper La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) phases by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Wu, Kuan-Ting; Soh, Yeong-Ah; Skinner, Stephen J., E-mail: s.skinner@imperial.ac.uk

2013-10-15

Graphical abstract: - Highlights: • High quality epitaxial thin films of layered Ruddlesden–Popper nickelates were prepared. • For the first time this has been achieved by the PLD process. • n = 1, 2 and 3 films were successfully deposited on SrTiO{sub 3} and NdGaO{sub 3} substrates. • c-Axis oriented films were confirmed by XRD analysis. • In-plane and out-of-plane strain effects on lattice are discussed. - Abstract: Layered Ruddlesden–Popper phases of composition La{sub n+1}Ni{sub n}O{sub 3n+1} (n = 1, 2 and 3) have been epitaxially grown on SrTiO{sub 3} (0 0 1) or NdGaO{sub 3} (1 1 0) single crystal substrates using the pulsed laser deposition technique. X-ray diffraction analyses (θ/2θ, rocking curves, and φ-scans) and atomic force microscopy confirms the high-quality growth of the series of films with low surface roughness values (less than 1 nm). In particular, epitaxial growth of the higher order phases (n = 2 and 3) of lanthanum nickelate have been demonstrated for the first time.

Epitaxial growth of topological insulator Bi{sub 2}Se{sub 3} film on Si(111) with atomically sharp interface

Energy Technology Data Exchange (ETDEWEB)

Bansal, Namrata [Department of Electrical and Computer Engineering, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Kim, Yong Seung [Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of); Edrey, Eliav; Brahlek, Matthew; Horibe, Yoichi [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Iida, Keiko; Tanimura, Makoto [Research Department, Nissan Arc, Ltd. Yokosuka, Kanagawa 237-0061 (Japan); Li Guohong; Feng Tian; Lee, Hang-Dong; Gustafsson, Torgny; Andrei, Eva [Department of Physics and Astronomy, Rutgers, State University of New Jersey, Piscataway, NJ 08854 (United States); Oh, Seongshik, E-mail: ohsean@physics.rutgers.edu [Department of Physics and Astronomy, Rutgers, the State University of New Jersey, Piscataway, NJ 08854 (United States)

2011-10-31

Atomically sharp epitaxial growth of Bi{sub 2}Se{sub 3} films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi{sub 2}Se{sub 3} films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi{sub 2}Se{sub 3} and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi{sub 2}Se{sub 3} is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi{sub 2}Se{sub 3} film down to the first quintuple layer without any second phase or an amorphous layer.

Solid-phase route to Fmoc-protected cationic amino acid building blocks

DEFF Research Database (Denmark)

Clausen, Jacob Dahlqvist; Linderoth, Lars; Nielsen, Hanne Mørck

2012-01-01

Diamino acids are commonly found in bioactive compounds, yet only few are commercially available as building blocks for solid-phase peptide synthesis. In the present work a convenient, inexpensive route to multiple-charged amino acid building blocks with varying degree of hydrophobicity...... was developed. A versatile solid-phase protocol leading to selectively protected amino alcohol intermediates was followed by oxidation to yield the desired di- or polycationic amino acid building blocks in gram-scale amounts. The synthetic sequence comprises loading of (S)-1-(p-nosyl)aziridine-2-methanol onto...... of simple neutral amino acids as well as analogs displaying high bulkiness or polycationic side chains was prepared. Two building blocks were incorporated into peptide sequences using microwave-assisted solid-phase peptide synthesis confirming their general utility....

Unitized solid phase immunoassay kit and method

International Nuclear Information System (INIS)

1975-01-01

A unitized solid phase kit for radioimmunoassay is disclosed. All of the necessary assay reagents are incorporated into a single tube wherein all phases of the assay procedure are performed, requiring only the addition of the patient's sample. Antibody is bound to the tube surface while labelled antigen is also present but unbound. Storage in the absence of air and water results in the stabilization of the reagents such that the system can be stored for long periods

Effect of epitaxy on interband transitions in ferroelectric KNbO.sub.3./sub..

Czech Academy of Sciences Publication Activity Database

Tyunina, Marina; Yao, L.D.; Chvostová, Dagmar; Kocourek, Tomáš; Jelínek, Miroslav; Dejneka, Alexandr; van Dijken, S.

2015-01-01

Roč. 17, Apr (2015), 043048 ISSN 1367-2630 R&D Projects: GA ČR(CZ) GA15-13853S; GA ČR GA15-15123S Institutional support: RVO:68378271 Keywords : ferroelectric * epitaxy * optica Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015

Photoluminescence investigation of type-II GaSb/GaAs quantum dots grown by liquid phase epitaxy

Science.gov (United States)

Wang, Yang; Hu, Shuhong; Xie, Hao; Lin, Hongyu; lu, Hongbo; Wang, Chao; Sun, Yan; Dai, Ning

2018-06-01

GaSb quantum dots (QDs) with an areal density of ∼1 × 1010 cm-2 are successfully grown by the modified (rapid slider) liquid phase epitaxy technique. The morphology of the QDs has been investigated by scanning electron microscope (SEM) and atom force microscope (AFM). The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power. From the temperature-dependence PL spectra, the activation energy of QDs is determined to be 111 meV.

Solid-phase microextraction

DEFF Research Database (Denmark)

Nilsson, Torben

The objective of this study has been to develop new analytical methods using the rapid, simple and solvent-free extraction technique solid-phase microextraction (SPME) for the quantitative analysis of organic pollutants at trace level in drinking water and environmental samples. The dynamics...... of SPME were examined for halogenated and non-halogenated volatile hydrocarbons, and a standard method for their quantitative analysis in aqueous samples was developed and validated in inter-laboratory studies on the basis of reference material and in comparison with the traditional methods....... The influences of some possible interferences on the SPME process were examined, and new SPME probes were tested for the in situ monitoring of groundwater pollutants. Inter-laboratory studies were carried out also for the validation of SPME for the quantitative analysis of organochlorine, organonitrogen...

Phase segregation in cerium-lanthanum solid solutions

NARCIS (Netherlands)

Belliere, V.; Joorst, G; Stephan, O; de Groot, FMF; Weckhuysen, BM

2006-01-01

Electron energy-loss spectroscopy (EELS) in combination with scanning transmission electron microscopy ( STEM) reveals that the La enrichment at the surface of cerium-lanthanum solid solutions is an averaged effect and that segregation occurs in a mixed oxide phase. This separation occurs within a

Complement fixation by solid phase immune complexes. Reduced capacity in SLE sera

DEFF Research Database (Denmark)

Baatrup, G; Jonsson, H; Sjöholm, A

1988-01-01

We describe an ELISA for assessment of complement function based on the capacity of serum to support fixation of complement components to solid phase immune complexes (IC). Microplates were coated with aggregated bovine serum albumin (BSA) followed by rabbit anti-BSA IgG. The solid phase IC were...

Thin film evolution equations from (evaporating) dewetting liquid layers to epitaxial growth

International Nuclear Information System (INIS)

Thiele, U

2010-01-01

In the present contribution we review basic mathematical results for three physical systems involving self-organizing solid or liquid films at solid surfaces. The films may undergo a structuring process by dewetting, evaporation/condensation or epitaxial growth, respectively. We highlight similarities and differences of the three systems based on the observation that in certain limits all of them may be described using models of similar form, i.e. time evolution equations for the film thickness profile. Those equations represent gradient dynamics characterized by mobility functions and an underlying energy functional. Two basic steps of mathematical analysis are used to compare the different systems. First, we discuss the linear stability of homogeneous steady states, i.e. flat films, and second the systematics of non-trivial steady states, i.e. drop/hole states for dewetting films and quantum-dot states in epitaxial growth, respectively. Our aim is to illustrate that the underlying solution structure might be very complex as in the case of epitaxial growth but can be better understood when comparing the much simpler results for the dewetting liquid film. We furthermore show that the numerical continuation techniques employed can shed some light on this structure in a more convenient way than time-stepping methods. Finally we discuss that the usage of the employed general formulation does not only relate seemingly unrelated physical systems mathematically, but does allow as well for discussing model extensions in a more unified way.

Strain dependent microstructural modifications of BiCrO{sub 3} epitaxial thin films

Energy Technology Data Exchange (ETDEWEB)

Kannan, Vijayanandhini, E-mail: kvnandhini@gmail.com [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Arredondo, Miryam; Johann, Florian; Hesse, Dietrich [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany); Labrugere, Christine [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); CeCaMA, University of Bordeaux, ICMCB, F-33600 Pessac (France); Maglione, Mario [CNRS, University of Bordeaux, ICMCB, UPR 9048, F-33600 Pessac (France); Vrejoiu, Ionela [Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

2013-10-31

Strain-dependent microstructural modifications were observed in epitaxial BiCrO{sub 3} (BCO) thin films fabricated on single crystalline substrates, utilizing pulsed laser deposition. The following conditions were employed to modify the epitaxial-strain: (i) in-plane tensile strain, BCO{sub STO} [BCO grown on buffered SrTiO{sub 3} (001)] and in-plane compressive strain, BCO{sub NGO} [BCO grown on buffered NdGaO{sub 3} (110)] and (ii) varying BCO film thickness. A combination of techniques like X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (TEM) was used to analyse the epitaxial growth quality and the microstructure of BCO. Our studies revealed that in the case of BCO{sub STO}, a coherent interface with homogeneous orthorhombic phase is obtained only for BCO film with thicknesses, d < 50 nm. All the BCO{sub STO} films with d ≥ 50 nm were found to be strain-relaxed with an orthorhombic phase showing 1/2 <100> and 1/4 <101> satellite reflections, the latter oriented at 45° from orthorhombic diffraction spots. High angle annular dark field scanning TEM of these films strongly suggested that the satellite reflections, 1/2 <100> and 1/4 <101>, originate from the atomic stacking sequence changes (or “modulated structure”) as reported for polytypes, without altering the chemical composition. The unaltered stoichiometry was confirmed by estimating both valency of Bi and Cr cations by surface and in-depth XPS analysis as well as the stoichiometric ratio (1 Bi:1 Cr) using scanning TEM–energy dispersive X-ray analysis. In contrast, compressively strained BCO{sub NGO} films exhibited monoclinic symmetry without any structural modulations or interfacial defects, up to d ∼ 200 nm. Our results indicate that both the substrate-induced in-plane epitaxial strain and the BCO film thickness are the crucial parameters to stabilise a homogeneous BCO phase in an epitaxially grown film. - Highlights: • Phase pure

Biological nitrate removal from water and wastewater by solid-phase denitrification process.

Science.gov (United States)

Wang, Jianlong; Chu, Libing

2016-11-01

Nitrate pollution in receiving waters has become a serious issue worldwide. Solid-phase denitrification process is an emerging technology, which has received increasing attention in recent years. It uses biodegradable polymers as both the carbon source and biofilm carrier for denitrifying microorganisms. A vast array of natural and synthetic biopolymers, including woodchips, sawdust, straw, cotton, maize cobs, seaweed, bark, polyhydroxyalkanoate (PHA), polycaprolactone (PCL), polybutylene succinate (PBS) and polylactic acid (PLA), have been widely used for denitrification due to their good performance, low cost and large available quantities. This paper presents an overview on the application of solid-phase denitrification in nitrate removal from drinking water, groundwater, aquaculture wastewater, the secondary effluent and wastewater with low C/N ratio. The types of solid carbon source, the influencing factors, the microbial community of biofilm attached on the biodegradable carriers, the potential adverse effect, and the cost of denitrification process are introduced and evaluated. Woodchips and polycaprolactone are the popular and competitive natural plant-like and synthetic biodegradable polymers used for denitrification, respectively. Most of the denitrifiers reported in solid-phase denitrification affiliated to the family Comamonadaceae in the class Betaproteobacteria. The members of genera Diaphorobacter, Acidovorax and Simplicispira were mostly reported. In future study, more attention should be paid to the simultaneous removal of nitrate and toxic organic contaminants such as pesticide and PPCPs by solid-phase denitrification, to the elucidation of the metabolic and regulatory relationship between decomposition of solid carbon source and denitrification, and to the post-treatment of the municipal secondary effluent. Solid-phase denitrification process is a promising technology for the removal of nitrate from water and wastewater. Copyright © 2016

Solid-solid synthesis and structural phase transition process of SmF3

Science.gov (United States)

Yan, Qi-Cao; Guo, Xing-Min

2018-04-01

Mazes of contradictory conclusions have been obtained by previous researches about structural phase transition process of SmF3. In this paper, the single crystals of SmF3 (hexagonal and orthorhombic) were prepared by solid-solid synthesis, which have shown gradual changes in crystal growth modes with the increase temperature and holding time. Furthermore, we propose the phase transition process of in SmF3. Hexagonal symmetry of SmF3 (space group Pnma) was prepared firstly by heating Sm2O3 and NH4HF2 over 40 min at 270 °C. And then orthorhombic symmetry of SmF3 (space group P63mc) was obtained by heating hexagonal symmetry over 10 h at 650 °C. The reaction of SmF3 (hexagonal) = SmF3 (orthorhombic) is extremely sluggish at a low temperature (less than 650 °C), which was seen as a Mixed Grown Region.

Thermodynamic phase behavior of API/polymer solid dispersions.

Science.gov (United States)

Prudic, Anke; Ji, Yuanhui; Sadowski, Gabriele

2014-07-07

To improve the bioavailability of poorly soluble active pharmaceutical ingredients (APIs), these materials are often integrated into a polymer matrix that acts as a carrier. The resulting mixture is called a solid dispersion. In this work, the phase behaviors of solid dispersions were investigated as a function of the API as well as of the type and molecular weight of the carrier polymer. Specifically, the solubility of artemisinin and indomethacin was measured in different poly(ethylene glycol)s (PEG 400, PEG 6000, and PEG 35000). The measured solubility data and the solubility of sulfonamides in poly(vinylpyrrolidone) (PVP) K10 and PEG 35000 were modeled using the perturbed-chain statistical associating fluid theory (PC-SAFT). The results show that PC-SAFT predictions are in a good accordance with the experimental data, and PC-SAFT can be used to predict the whole phase diagram of an API/polymer solid dispersion as a function of the kind of API and polymer and of the polymer's molecular weight. This remarkably simplifies the screening process for suitable API/polymer combinations.

Experimental design for reflection measurements of highly reactive liquid or solid substances with application to liquid sodium

International Nuclear Information System (INIS)

Chan, S.H.; Gossler, A.A.

1980-01-01

A versatile goniometer system with associated electronic components and mechanical instruments has been assembled. It is designed to measure spectral, specular reflectances of highly reactive liquid or solid substances over a spectral range of 0.3 to 9 μ and incidence angles of 12 to 30 0 off the normal direction. The capability of measuring reflectances of liquid substances clearly distinguishes this experimental design from conventional systems which are applicable only to solid substances. This design has been used to measure the spectral, specular reflectance of liquid sodium and preliminary results obtained are compared with those of solid sodium measured by other investigators

Photovoltaic x-ray detectors based on the GaAs epitaxial structures

CERN Document Server

Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

2002-01-01

The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

Reversal of lattice, electronic structure, and magnetism in epitaxial SrCoOx thin films

Science.gov (United States)

Jeen, H.; Choi, W. S.; Lee, J. H.; Cooper, V. R.; Lee, H. N.; Seo, S. S. A.; Rabe, K. M.

2014-03-01

SrCoOx (x = 2.5 - 3.0, SCO) is an ideal material to study the role of oxygen content for electronic structure and magnetism, since SCO has two distinct topotactic phases: the antiferromagnetic insulating brownmillerite SrCoO2.5 and the ferromagnetic metallic perovskite SrCoO3. In this presentation, we report direct observation of a reversible lattice and electronic structure evolution in SrCoOx epitaxial thin films as well as different magnetic and electronic ground states between the topotactic phases.[2] By magnetization measurements, optical absorption, and transport measurements drastically different electronic and magnetic ground states are found in the epitaxially grown SrCoO2.5 and SrCoO3 thin films by pulsed laser epitaxy. First-principles calculations confirm substantial, which originate from the modification in the Co valence states and crystallographic structures. By real-time spectroscopic ellipsometry, the two electronically and magnetically different phases can be reversibly changed by changing the ambient pressure at greatly reduced temperatures. Our finding provides an important pathway to understanding the novel oxygen-content-dependent phase transition uniquely found in multivalent transition metal oxides. The work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Epitaxy of advanced nanowire quantum devices

Science.gov (United States)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

A Tariff for Reactive Power

Energy Technology Data Exchange (ETDEWEB)

Kueck, John D [ORNL; Kirby, Brendan J [ORNL; Li, Fangxing [ORNL; Tufon, Christopher [Pacific Gas and Electric Company; Isemonger, Alan [California Independent System Operator

2008-07-01

Two kinds of power are required to operate an electric power system: real power, measured in watts, and reactive power, measured in volt-amperes reactive or VARs. Reactive power supply is one of a class of power system reliability services collectively known as ancillary services, and is essential for the reliable operation of the bulk power system. Reactive power flows when current leads or lags behind voltage. Typically, the current in a distribution system lags behind voltage because of inductive loads such as motors. Reactive power flow wastes energy and capacity and causes voltage droop. To correct lagging power flow, leading reactive power (current leading voltage) is supplied to bring the current into phase with voltage. When the current is in phase with voltage, there is a reduction in system losses, an increase in system capacity, and a rise in voltage. Reactive power can be supplied from either static or dynamic VAR sources. Static sources are typically transmission and distribution equipment, such as capacitors at substations, and their cost has historically been included in the revenue requirement of the transmission operator (TO), and recovered through cost-of-service rates. By contrast, dynamic sources are typically generators capable of producing variable levels of reactive power by automatically controlling the generator to regulate voltage. Transmission system devices such as synchronous condensers can also provide dynamic reactive power. A class of solid state devices (called flexible AC transmission system devices or FACTs) can provide dynamic reactive power. One specific device has the unfortunate name of static VAR compensator (SVC), where 'static' refers to the solid state nature of the device (it does not include rotating equipment) and not to the production of static reactive power. Dynamic sources at the distribution level, while more costly would be very useful in helping to regulate local voltage. Local voltage regulation would

Solid-phase microextraction for bioconcentration studies according to OECD TG 305

Energy Technology Data Exchange (ETDEWEB)

Duering, Rolf-Alexander; Boehm, Leonard [Land Use and Nutrition (IFZ) Justus Liebig University Giessen, Institute of Soil Science and Soil Conservation, Research Centre for BioSystems, Giessen (Germany); Schlechtriem, Christian [Fraunhofer Institute for Molecular Biology and Applied Ecology (IME), Schmallenberg (Germany)

2012-12-15

An important aim of the European Community Regulation on chemicals and their safe use is the identification of (very) persistent, (very) bioaccumulative, and toxic substances. In other regulatory chemical safety assessments (pharmaceuticals, biocides, pesticides), the identification of such (very) persistent, (very) bioaccumulative, and toxic substances is of increasing importance. Solid-phase microextraction is especially capable of extracting total water concentrations as well as the freely dissolved fraction of analytes in the water phase, which is available for bioconcentration in fish. However, although already well established in environmental analyses to determine and quantify analytes mainly in aqueous matrices, solid-phase microextraction is still a rather unusual method in regulatory ecotoxicological research. Here, the potential benefits and drawbacks of solid-phase microextraction are discussed as an analytical routine approach for aquatic bioconcentration studies according to OECD TG 305, with a special focus on the testing of hydrophobic organic compounds characterized by log K{sub OW}> 5. (orig.)

Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

International Nuclear Information System (INIS)

Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

1987-01-01

A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

International Nuclear Information System (INIS)

Ferralis, Nicola; Carraro, Carlo

2014-01-01

Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm −1 corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching

Evolution of interfacial intercalation chemistry on epitaxial graphene/SiC by surface enhanced Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ferralis, Nicola, E-mail: ferralis@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Carraro, Carlo [Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720 (United States)

2014-11-30

Highlights: • H-intercalated epitaxial graphene–SiC interface studied with surface enhanced Raman. • Evolution of graphene and H–Si interface with UV-ozone, annealing and O-exposure. • H–Si interface and quasi-freestanding graphene are retained after UV-ozone treatment. • Enhanced ozonolytic reactivity at the edges of H-intercalated defected graphene. • Novel SERS method for characterizing near-surface graphene–substrate interfaces. - Abstract: A rapid and facile evaluation of the effects of physical and chemical processes on the interfacial layer between epitaxial graphene monolayers on SiC(0 0 0 1) surfaces is essential for applications in electronics, photonics, and optoelectronics. Here, the evolution of the atomic scale epitaxial graphene-buffer-layer–SiC interface through hydrogen intercalation, thermal annealings, UV-ozone etching and oxygen exposure is studied by means of single microparticle mediated surface enhanced Raman spectroscopy (smSERS). The evolution of the interfacial chemistry in the buffer layer is monitored through the Raman band at 2132 cm{sup −1} corresponding to the Si-H stretch mode. Graphene quality is monitored directly by the selectively enhanced Raman signal of graphene compared to the SiC substrate signal. Through smSERS, a simultaneous correlation between optimized hydrogen intercalation in epitaxial graphene/SiC and an increase in graphene quality is uncovered. Following UV-ozone treatment, a fully hydrogen passivated interface is retained, while a moderate degradation in the quality of the hydrogen intercalated quasi-freestanding graphene is observed. While hydrogen intercalated defect free quasi-freestanding graphene is expected to be robust upon UV-ozone, thermal annealing, and oxygen exposure, ozonolytic reactivity at the edges of H-intercalated defected graphene results in enhanced amorphization of the quasi-freestanding (compared to non-intercalated) graphene, leading ultimately to its complete etching.

GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

Simulating Solid-Solid Phase Transition in Shape-Memory Alloy Microstructure by Face-Offsetting Method

International Nuclear Information System (INIS)

Bellur Ramaswamy, Ravi S.; Tortorelli, Daniel A.; Fried, Eliot; Jiao Xiangmin

2008-01-01

Advances in the understanding of martensitic transformations (diffusionless, solid-solid phase transformations) have been instrumental to the recent discovery of new low hysteresis alloys. However, some key fundamental issues must be better understood to design still better alloys. Restricting attention to antiplane shear, we use finite element analysis to model the shape-memory alloy microstructure within the Abeyaratne-Knowles continuum thermomechanical framework and use an interface kinetic relation of the kind proposed by Rosakis and Tsai. Geometric singularities and topological changes associated with microstructural evolution pose significant numerical challenges. We address such challenges with a recently developed front-tracking scheme called the face-offsetting method (FOM) to explicitly model phase interfaces. Initial results demonstrate the effectiveness of FOM in resolving needle-like twinned microstructures

Two-dimensional solid-phase extraction strategy for the selective enrichment of aminoglycosides in milk.

Science.gov (United States)

Shen, Aijin; Wei, Jie; Yan, Jingyu; Jin, Gaowa; Ding, Junjie; Yang, Bingcheng; Guo, Zhimou; Zhang, Feifang; Liang, Xinmiao

2017-03-01

An orthogonal two-dimensional solid-phase extraction strategy was established for the selective enrichment of three aminoglycosides including spectinomycin, streptomycin, and dihydrostreptomycin in milk. A reversed-phase liquid chromatography material (C 18 ) and a weak cation-exchange material (TGA) were integrated in a single solid-phase extraction cartridge. The feasibility of two-dimensional clean-up procedure that experienced two-step adsorption, two-step rinsing, and two-step elution was systematically investigated. Based on the orthogonality of reversed-phase and weak cation-exchange procedures, the two-dimensional solid-phase extraction strategy could minimize the interference from the hydrophobic matrix existing in traditional reversed-phase solid-phase extraction. In addition, high ionic strength in the extracts could be effectively removed before the second dimension of weak cation-exchange solid-phase extraction. Combined with liquid chromatography and tandem mass spectrometry, the optimized procedure was validated according to the European Union Commission directive 2002/657/EC. A good performance was achieved in terms of linearity, recovery, precision, decision limit, and detection capability in milk. Finally, the optimized two-dimensional clean-up procedure incorporated with liquid chromatography and tandem mass spectrometry was successfully applied to the rapid monitoring of aminoglycoside residues in milk. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Twenty years of molecular beam epitaxy

Science.gov (United States)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Reactive Desorption of CO Hydrogenation Products under Cold Pre-stellar Core Conditions

Science.gov (United States)

Chuang, K.-J.; Fedoseev, G.; Qasim, D.; Ioppolo, S.; van Dishoeck, E. F.; Linnartz, H.

2018-02-01

The astronomical gas-phase detection of simple species and small organic molecules in cold pre-stellar cores, with abundances as high as ∼10‑8–10‑9 n H, contradicts the generally accepted idea that at 10 K, such species should be fully frozen out on grain surfaces. A physical or chemical mechanism that results in a net transfer from solid-state species into the gas phase offers a possible explanation. Reactive desorption, i.e., desorption following the exothermic formation of a species, is one of the options that has been proposed. In astronomical models, the fraction of molecules desorbed through this process is handled as a free parameter, as experimental studies quantifying the impact of exothermicity on desorption efficiencies are largely lacking. In this work, we present a detailed laboratory study with the goal of deriving an upper limit for the reactive desorption efficiency of species involved in the CO–H2CO–CH3OH solid-state hydrogenation reaction chain. The limit for the overall reactive desorption fraction is derived by precisely investigating the solid-state elemental carbon budget, using reflection absorption infrared spectroscopy and the calibrated solid-state band-strength values for CO, H2CO and CH3OH. We find that for temperatures in the range of 10 to 14 K, an upper limit of 0.24 ± 0.02 for the overall elemental carbon loss upon CO conversion into CH3OH. This corresponds with an effective reaction desorption fraction of ≤0.07 per hydrogenation step, or ≤0.02 per H-atom induced reaction, assuming that H-atom addition and abstraction reactions equally contribute to the overall reactive desorption fraction along the hydrogenation sequence. The astronomical relevance of this finding is discussed.

Evaluation of a solid-phase RIA technique and a solid-phase ELISA technique for demonstrating hepatitis-B surface antigen

International Nuclear Information System (INIS)

Vranckx, R.; Cole, J.; Peetermans, M.

1978-01-01

The sensitivities of a solid-phase radioimmunoassay (RIA), a solid-phase enzyme immunoassay (ELISA) and a haemagglutination test (RPHA) for the detection of the hepatitis-B surface antigen (HBsAg) were compared (1) by screening a panel of 300 sera (97 positives and 203 negatives), and (2) by titrating serial dilutions of 10 positive sera. Ninety-seven sera were positive by RIA, 95% were detected by ELISA and 81% were detected by RPHA. In the serial dilutions, the average end-points of the titrations were 0.005ng/ml for RIA, 0.01ng/ml for ELISA and 0.04 ng/ml for RPHA. It can be concluded that the sensitivity of the ELISA test is intermediate between that of the RIA and the RPHA. The ELISA and the RPHA tests seem to be a little more sensitive for the detection of subtype ay than for the detection of subtype ad. (author)

C18, C8, and perfluoro reversed phases on diamond for solid-phase extraction.

Science.gov (United States)

Saini, Gaurav; Wiest, Landon A; Herbert, David; Biggs, Katherine N; Dadson, Andrew; Vail, Michael A; Linford, Matthew R

2009-04-17

In spite of advances in solid-phase extraction (SPE) technology there are certain disadvantages to current SPE silica-based, column packings. The pH range over which extraction can occur is limited and each column is generally only used once. New diamond-based reversed SPE phases (C(18), C(8), and perfluorinated) were developed in our laboratories. Studies were done which show that these phases do not have the same limitations as traditional silica-based stationary phases. The synthesis and properties of these diamond-based phases are presented, and the stability, percent recovery, and column capacity are given for the C(18) phase.

Thermal chemical-mechanical reactive flow model of shock initiation in solid explosives

International Nuclear Information System (INIS)

Nicholls, A.L. III; Tarver, C.M.

1998-01-01

The three dimensional Arbitrary Lagrange Eulerian hydrodynamic computer code ALE3D with fully coupled thermal-chemical-mechanical material models provides the framework for the development of a physically realistic model of shock initiation and detonation of solid explosives. The processes of hot spot formation during shock compression, subsequent ignition of reaction or failure to react, growth of reaction in individual hot spots, and coalescence of reacting hot spots during the transition to detonation can now be modeled using Arrhenius chemical kinetic rate laws and heat transfer to propagate the reactive flow. This paper discusses the growth rates of reacting hot spots in HMX and TATB and their coalescence during shock to detonation transition. Hot spot deflagration rates are found to be fast enough to consume explosive particles less than 10 mm in diameter during typical shock duration times, but larger particles must fragment and create more reactive surface area in order to be rapidly consumed

A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Schulte, K. L.; Kuech, T. F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

2014-12-28

GaAs growth by hydride vapor phase epitaxy (HVPE) has regained interest as a potential route to low cost, high efficiency thin film photovoltaics. In order to attain the highest efficiencies, deep level defect incorporation in these materials must be understood and controlled. The arsenic anti-site defect, As{sub Ga} or EL2, is the predominant deep level defect in HVPE-grown GaAs. In the present study, the relationships between HVPE growth conditions and incorporation of EL2 in GaAs epilayers were determined. Epitaxial n-GaAs layers were grown under a wide range of deposition temperatures (T{sub D}) and gallium chloride partial pressures (P{sub GaCl}), and the EL2 concentration, [EL2], was determined by deep level transient spectroscopy. [EL2] agreed with equilibrium thermodynamic predictions in layers grown under conditions in which the growth rate, R{sub G}, was controlled by conditions near thermodynamic equilibrium. [EL2] fell below equilibrium levels when R{sub G} was controlled by surface kinetic processes, with the disparity increasing as R{sub G} decreased. The surface chemical composition during growth was determined to have a strong influence on EL2 incorporation. Under thermodynamically limited growth conditions, e.g., high T{sub D} and/or low P{sub GaCl}, the surface vacancy concentration was high and the bulk crystal was close to equilibrium with the vapor phase. Under kinetically limited growth conditions, e.g., low T{sub D} and/or high P{sub GaCl}, the surface attained a high GaCl coverage, blocking As adsorption. This competitive adsorption process reduced the growth rate and also limited the amount of arsenic that incorporated as As{sub Ga}. A defect incorporation model which accounted for the surface concentration of arsenic as a function of the growth conditions, was developed. This model was used to identify optimal growth parameters for the growth of thin films for photovoltaics, conditions in which a high growth rate and low [EL2] could be

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Science.gov (United States)

Wu, Xian; Li, Peng; Liang, Renrong; Xiao, Lei; Xu, Jun; Wang, Jing

2018-05-01

A freestanding GaN wafer was prepared on porous Si (111) substrate using hydride vapor phase epitaxy (HVPE). To avoid undesirable effects of the porous surface on the crystallinity of the GaN, a GaN seed layer was first grown on the Si (111) bare wafer. A pattern with many apertures was fabricated in the GaN seed layer using lithography and etching processes. A porous layer was formed in the Si substrate immediately adjacent to the GaN seed layer by an anodic etching process. A 500-μm-thick GaN film was then grown on the patterned GaN seed layer using HVPE. The GaN film was separated from the Si substrate through the formation of cracks in the porous layer caused by thermal mismatch stress during the cooling stage of the HVPE. Finally, the GaN film was polished to obtain a freestanding GaN wafer.

Influence of Calcium on Microbial Reduction of Solid Phase Uranium (VI)

International Nuclear Information System (INIS)

Liu, Chongxuan; Jeon, Byong-Hun; Zachara, John M.; Wang, Zheming

2007-01-01

The effect of calcium on microbial reduction of a solid phase U(VI), sodium boltwoodite (NaUO2SiO3OH · 1.5H2O), was evaluated in a culture of a dissimilatory metal-reducing bacterium (DMRB), Shewanella oneidensis strain MR-1. Batch experiments were performed in a non-growth bicarbonate medium with lactate as electron donor at pH 7 buffered with PIPES. Calcium increased both the rate and extent of Na-boltwoodite dissolution by increasing its solubility through the formation of a ternary aqueous calcium-uranyl-carbonate species. The ternary species, however, decreased the rates of microbial reduction of aqueous U(VI). Laser-induced fluorescence spectroscopy (LIFS) and transmission electron microscopy (TEM) revealed that microbial reduction of solid phase U(VI) is a sequentially coupled process of Na-boltwoodite dissolution, U(VI) aqueous speciation, and microbial reduction of dissolved U(VI) to U(IV) that accumulated on bacterial surfaces/periplasm. The overall rates of microbial reduction of solid phase U(VI) can be described by the coupled rates of dissolution and microbial reduction that were both influenced by calcium. The results demonstrated that dissolved U(VI) concentration during microbial reduction was a complex function of solid phase U(VI) dissolution kinetics, aqueous U(VI) speciation, and microbial activity

Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

Science.gov (United States)

Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

2016-07-12

A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si

International Nuclear Information System (INIS)

Seo, J.W.; Fompeyrine, J.; Guiller, A.; Norga, G.; Marchiori, C.; Siegwart, H.; Locquet, J.-P.

2003-01-01

We have studied the growth of epitaxial La 2 Zr 2 O 7 thin films on (111) Si. Although the interface structure can be strongly affected by the Si oxidation during the deposition process, epitaxial growth of La 2 Zr 2 O 7 was obtained. A detailed study by means of transmission electron microscopy reveals two types of structures (pyrochlore and fluorite) with the same average chemical composition but strong differences in reactivity and interface formation. The structural complexity of the ordered pyrochlore structure seems to prevent excess oxygen diffusion and interfacial SiO 2 formation

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Energy Technology Data Exchange (ETDEWEB)

Perret, Edith [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700 Fribourg, Switzerland; Xu, Dongwei [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Highland, M. J. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Stephenson, G. B. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Zapol, P. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fuoss, P. H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Munkholm, A. [Munkholm Consulting, Mountain View, California 94043, USA; Thompson, Carol [Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

2017-12-04

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

Solid phase tube radioimmunoassay for digoxin detection

International Nuclear Information System (INIS)

Stellner, K.; Glatz, C.; Linke, R.

1975-01-01

A solid phase radioimmunoassay with 125 I is described for cardiac patients. The test for the digoxin determination and the poisoning due to cardiac glycosides can be measured very accurately and carried out easily. In addition, the test determination can be automatically performed in connection with other tests. (GSE/LH) [de

Experimental (solid + liquid) or (liquid + liquid) phase equilibria of (amine + nitrile) binary mixtures

International Nuclear Information System (INIS)

Domanska, Urszula; Marciniak, Malgorzata

2007-01-01

(Solid + liquid) phase diagrams have been determined for (hexylamine, or octylamine, or 1,3-diaminopropane + acetonitrile) mixtures. Simple eutectic systems have been observed in these mixtures. (Liquid + liquid) phase diagrams have been determined for (octylamine, or decylamine + propanenitrile, or + butanenitrile) mixtures. Mixtures with propanenitrile and butanenitrile show immiscibility in the liquid phase with an upper critical solution temperature, UCST. (Solid + liquid) phase diagrams have been correlated using NRTL, NRTL 1, Wilson and UNIQUAC equations. (Liquid + liquid) phase diagrams have been correlated using NRTL equation

Characterization of rhamnolipids by liquid chromatography/mass spectrometry after solid-phase extraction.

Science.gov (United States)

Behrens, Beate; Engelen, Jeannine; Tiso, Till; Blank, Lars Mathias; Hayen, Heiko

2016-04-01

Rhamnolipids are surface-active agents with a broad application potential that are produced in complex mixtures by bacteria of the genus Pseudomonas. Analysis from fermentation broth is often characterized by laborious sample preparation and requires hyphenated analytical techniques like liquid chromatography coupled to mass spectrometry (LC-MS) to obtain detailed information about sample composition. In this study, an analytical procedure based on chromatographic method development and characterization of rhamnolipid sample material by LC-MS as well as a comparison of two sample preparation methods, i.e., liquid-liquid extraction and solid-phase extraction, is presented. Efficient separation was achieved under reversed-phase conditions using a mixed propylphenyl and octadecylsilyl-modified silica gel stationary phase. LC-MS/MS analysis of a supernatant from Pseudomonas putida strain KT2440 pVLT33_rhlABC grown on glucose as sole carbon source and purified by solid-phase extraction revealed a total of 20 congeners of di-rhamnolipids, mono-rhamnolipids, and their biosynthetic precursors 3-(3-hydroxyalkanoyloxy)alkanoic acids (HAAs) with different carbon chain lengths from C8 to C14, including three rhamnolipids with uncommon C9 and C11 fatty acid residues. LC-MS and the orcinol assay were used to evaluate the developed solid-phase extraction method in comparison with the established liquid-liquid extraction. Solid-phase extraction exhibited higher yields and reproducibility as well as lower experimental effort.

Control growth of silicon nanocolumns' epitaxy on silicon nanowires

Energy Technology Data Exchange (ETDEWEB)

Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

2013-04-15

The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

Improved detection limits for phthalates by selective solid-phase micro-extraction

KAUST Repository

Zia, Asif I.; Afsarimanesh, Nasrin; Xie, Li; Nag, Anindya; Al-Bahadly, I. H.; Yu, P. L.; Kosel, Jü rgen

2016-01-01

Presented research reports on an improved method and enhanced limits of detection for phthalates; a hazardous additive used in the production of plastics by solid-phase micro-extraction (SPME) polymer in comparison to molecularly imprinted solid

Elementary excitations and phase transformations in solids

International Nuclear Information System (INIS)

Cowley, R.A.

1985-01-01

Neutron scattering is and will continue to be a uniquely powerful tool for the study of elementary excitations and phase transformations in solids. The paper examines a few recent experiments on molecular crystals, superionic materials, paramagnetic scattering and phase transitions to see what experimental features made these experiments possible, and hence to make suggestions about future needs. It is concluded that new instruments will extend the scope of neutron scattering studies to new excitations, that there is a need for higher resolution, particularly for phase transition studies, and that it will be important to use intensity information, discrimination against unwanted inelastic processes and polarization analysis to reliably measure the excitations in new materials. (author)

Semi-automated microwave assisted solid-phase peptide synthesis

DEFF Research Database (Denmark)

Pedersen, Søren Ljungberg

with microwaves for SPPS has gained in popularity as it for many syntheses has provided significant improvement in terms of speed, purity, and yields, maybe especially in the synthesis of long and "difficult" peptides. Thus, precise microwave heating has emerged as one new parameter for SPPS, in addition...... to coupling reagents, resins, solvents etc. We have previously reported on microwave heating to promote a range of solid-phase reactions in SPPS. Here we present a new, flexible semi-automated instrument for the application of precise microwave heating in solid-phase synthesis. It combines a slightly modified...... Biotage Initiator microwave instrument, which is available in many laboratories, with a modified semi-automated peptide synthesizer from MultiSynTech. A custom-made reaction vessel is placed permanently in the microwave oven, thus the reactor does not have to be moved between steps. Mixing is achieved...

Investigation of solid-phase hydrogenation of amino acids and peptides

International Nuclear Information System (INIS)

Zolotarev, Yu.A.; Myasoedov, N.F.; Zajtsev, D.A.; Lubnin, M.Yu.; Tatur, V.Yu.; Kozik, V.S.; Dorokhova, E.M.; Rozenberg, S.N.

1990-01-01

The possibility of synthesizing amino acids and peptides multiply labelled with tritium or deuterium by the method of solid-phase isotopic exchange with gaseous hydrogen isotopes was verified. Establishment of the isotopic hydrogen equilibrium between the gaseous phase and the solid phase formed by the amino acid molecules was found experimentally. The activation energy of the isotopic exchange is 13 kcal/mol. A mathematical model was set up for the isotopic exchange with a probable substitution of hydrogen atoms. Uniformly labelled amino acids were obtained in a high optical purity and with 80 to 90% hydrogen substitution by deuterium and tritium. Tritiated peptides were prepared in high yields at molar activities of 1.5 to 3.7 TBq/mmol. (author). 4 tabs

The use of solid sorbents for direct accumulation of organic compounds from water matrices : a review of solid-phase extraction techniques

NARCIS (Netherlands)

Liska, I.; Krupcik, J.; Leclercq, P.A.

1989-01-01

The main principles of solid-phase extraction techniques are reviewed in this paper. Various solid sorbents can be used as a suitable trap for direct accumulation of organic compounds from aqueous solutions. The trapped analytes can be desorbed by elution with suitably chosen liquid phases. These

Molecular beam epitaxy of LiMnAs

Czech Academy of Sciences Publication Activity Database

Novák, Vít; Cukr, Miroslav; Šobáň, Zbyněk; Jungwirth, Tomáš; Martí, X.; Holý, V.; Horodyská, P.; Němec, P.

2011-01-01

Roč. 323, č. 1 (2011), s. 348-350 ISSN 0022-0248 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA MŠk(CZ) 7E08087 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521 Keywords : crystal structure * molecular beam epitaxy * lithium compounds * magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.726, year: 2011

Process for forming epitaxial perovskite thin film layers using halide precursors

Science.gov (United States)

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

The growth and tensile deformation behavior of the silver solid solution phase with zinc

International Nuclear Information System (INIS)

Wu, Jiaqi; Lee, Chin C.

2016-01-01

The growth of homogeneous silver solid solution phase with zinc are conducted at two different compositions. X-ray diffraction (XRD) and Scanning electron microscope/Energy dispersive X-ray spectroscopy (SEM/EDX) are carried out for phase identification and chemical composition verification. The mechanical properties of silver solid solution phase with zinc are evaluated by tensile test. The engineering and true stress vs. strain curves are presented and analyzed, with those of pure silver in comparison. According to the experimental results, silver solid solution phase with zinc at both compositions show tempered yield strength, high tensile strength and large uniform strain compared to those of pure silver. Fractography further confirmed the superior ductility of silver solid solution phase with zinc at both compositions. Our preliminary but encouraging results may pave the way for the silver based alloys to be applied in industries such as electronic packaging and structure engineering.

Three-phase boundary length in solid-oxide fuel cells: A mathematical model

Energy Technology Data Exchange (ETDEWEB)

Janardhanan, Vinod M. [Institutefor Chemical Technology and Polymer Chemistry, University of Karlsruhe (TH), Kaiserstr. 12, D-76128 Karlsruhe (Germany); Heuveline, Vincent; Deutschmann, Olaf [Institute for Applied and Numerical Mathematics, University of Karlsruhe (TH), Kaiserstr. 12, D-76128 Karlsruhe (Germany)

2008-03-15

A mathematical model to calculate the volume specific three-phase boundary length in the porous composite electrodes of solid-oxide fuel cell is presented. The model is exclusively based on geometrical considerations accounting for porosity, particle diameter, particle size distribution, and solids phase distribution. Results are presented for uniform particle size distribution as well as for non-uniform particle size distribution. (author)

Three-phase boundary length in solid-oxide fuel cells: A mathematical model

Science.gov (United States)

Janardhanan, Vinod M.; Heuveline, Vincent; Deutschmann, Olaf

A mathematical model to calculate the volume specific three-phase boundary length in the porous composite electrodes of solid-oxide fuel cell is presented. The model is exclusively based on geometrical considerations accounting for porosity, particle diameter, particle size distribution, and solids phase distribution. Results are presented for uniform particle size distribution as well as for non-uniform particle size distribution.

Epitaxial growth of CZT(S,Se) on silicon

Science.gov (United States)

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

KAUST Repository

Zhang, Yan

2015-05-13

Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.

Molecular beam epitaxy of Cd3As2 on a III-V substrate

Directory of Open Access Journals (Sweden)

Timo Schumann

2016-12-01

Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

Science.gov (United States)

Lu, Zihong

1995-01-01

The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

2010-01-01

The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100/Si(100 substrates

Directory of Open Access Journals (Sweden)

Gogneau N

2014-09-01

Full Text Available Noelle Gogneau,1 Amira Ben Gouider Trabelsi,2 Mathieu G Silly,3 Mohamed Ridene,1 Marc Portail,4 Adrien Michon,4 Mehrezi Oueslati,2 Rachid Belkhou,3 Fausto Sirotti,3 Abdelkarim Ouerghi1 1Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, Marcoussis, France; 2Unité des Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Université de Tunis El Manar Campus Universitaire, Tunis, Tunisia; 3Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France; 4Centre de Recherche sur l'HétéroEpitaxie et Ses Application, Centre National de la Recherche Scientifique, Valbonne, France Abstract: Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100 epilayers grown by chemical vapor deposition on Si(100 substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100/Si(100 are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. Keywords: epitaxial graphene, electronic properties, structural properties, silicon carbide 

A reactor/separator device for use in automated solid phase immunoassay

International Nuclear Information System (INIS)

Farina, P.R.; Ordonez, K.P.; Siewers, I.J.

1979-01-01

A reactor/separator device is described for use in automated solid phase immunoassay, including radioimmunoassays. The device is a column fitted at the bottom portion with a water impermeable disc which can hold, for example, immunoabsorbents, immobilized antisera or ion exchange resins. When the contents of the column supported by the disc are brought into contact with an aqueous phase containing reagents or reactants, a chemical reaction is initiated. After the reaction, centrifugally applied pressure forces the aqueous phase through the filter disc making it water permeable and separating a desired component for subsequent analysis. The reactor/separator device of the present invention permits kinetic solid phase assays (non-equilibrium conditions) to be carried out which would be difficult to perform by other conventional methods. (author)

Faults of solid-phase welding in titanium joints and their effect on strength

International Nuclear Information System (INIS)

Matyushkin, B.A.; Redchits, V.V.

1982-01-01

A possibility of the usage of thermal arc energy for the determination of the kinetics of solid-phase joint formation of the VT20 titanium alloy is found out experimentally. Positive action of diffusion annealing upon mechanical properties. of solid-phase joints is explained by the defect elimination

EDITORIAL: Epitaxial graphene Epitaxial graphene

Science.gov (United States)

de Heer, Walt A.; Berger, Claire

2012-04-01

Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

Method for calculating solid-solid phase transitions at high temperature: An application to N2O

International Nuclear Information System (INIS)

Kuchta, B.; Etters, R.D.

1992-01-01

Two similar techniques for calculating solid-solid phase transitions at high temperatures are developed, where the contribution of the entropy may be a decisive factor. They utilize an artificial reversible path from one phase to another by application of a control parameter. Thermodynamic averages are calculated using constant-volume and constant-pressure Monte Carlo techniques. An application to N 2 O at room temperature shows that the cubic Pa3 to orthorhombic Cmca transition occurs near 4.9-GPa pressure, very close to the value calculated at very low temperatures. These results support experimental evidence that the transition pressure is virtually independent of temperature

A review of solid-fluid selection options for optical-based measurements in single-phase liquid, two-phase liquid-liquid and multiphase solid-liquid flows

Science.gov (United States)

Wright, Stuart F.; Zadrazil, Ivan; Markides, Christos N.

2017-09-01

Experimental techniques based on optical measurement principles have experienced significant growth in recent decades. They are able to provide detailed information with high-spatiotemporal resolution on important scalar (e.g., temperature, concentration, and phase) and vector (e.g., velocity) fields in single-phase or multiphase flows, as well as interfacial characteristics in the latter, which has been instrumental to step-changes in our fundamental understanding of these flows, and the development and validation of advanced models with ever-improving predictive accuracy and reliability. Relevant techniques rely upon well-established optical methods such as direct photography, laser-induced fluorescence, laser Doppler velocimetry/phase Doppler anemometry, particle image/tracking velocimetry, and variants thereof. The accuracy of the resulting data depends on numerous factors including, importantly, the refractive indices of the solids and liquids used. The best results are obtained when the observational materials have closely matched refractive indices, including test-section walls, liquid phases, and any suspended particles. This paper reviews solid-liquid and solid-liquid-liquid refractive-index-matched systems employed in different fields, e.g., multiphase flows, turbomachinery, bio-fluid flows, with an emphasis on liquid-liquid systems. The refractive indices of various aqueous and organic phases found in the literature span the range 1.330-1.620 and 1.251-1.637, respectively, allowing the identification of appropriate combinations to match selected transparent or translucent plastics/polymers, glasses, or custom materials in single-phase liquid or multiphase liquid-liquid flow systems. In addition, the refractive indices of fluids can be further tuned with the use of additives, which also allows for the matching of important flow similarity parameters such as density and viscosity.

Reactivating the Ni-YSZ electrode in solid oxide cells and stacks by infiltration

Science.gov (United States)

Skafte, Theis Løye; Hjelm, Johan; Blennow, Peter; Graves, Christopher

2018-02-01

The solid oxide cell (SOC) could play a vital role in energy storage when the share of intermittent electricity production is high. However, large-scale commercialization of the technology is still hindered by the limited lifetime. Here, we address this issue by examining the potential for repairing various failure and degradation mechanisms occurring in the fuel electrode, thereby extending the potential lifetime of a SOC system. We successfully infiltrated the nickel and yttria-stabilized zirconia cermet electrode in commercial cells with Gd-doped ceria after operation. By this method we fully reactivated the fuel electrode after simulated reactant starvation and after carbon formation. Furthermore, by infiltrating after 900 h of operation, the degradation of the fuel electrode was reduced by a factor of two over the course of 2300 h. Lastly, the scalability of the concept is demonstrated by reactivating an 8-cell stack based on a commercial design.

Phase transitions of amorphous solid acetone in confined geometry investigated by reflection absorption infrared spectroscopy.

Science.gov (United States)

Shin, Sunghwan; Kang, Hani; Kim, Jun Soo; Kang, Heon

2014-11-26

We investigated the phase transformations of amorphous solid acetone under confined geometry by preparing acetone films trapped in amorphous solid water (ASW) or CCl4. Reflection absorption infrared spectroscopy (RAIRS) and temperature-programmed desorption (TPD) were used to monitor the phase changes of the acetone sample with increasing temperature. An acetone film trapped in ASW shows an abrupt change in the RAIRS features of the acetone vibrational bands during heating from 80 to 100 K, which indicates the transformation of amorphous solid acetone to a molecularly aligned crystalline phase. Further heating of the sample to 140 K produces an isotropic solid phase, and eventually a fluid phase near 157 K, at which the acetone sample is probably trapped in a pressurized, superheated condition inside the ASW matrix. Inside a CCl4 matrix, amorphous solid acetone crystallizes into a different, isotropic structure at ca. 90 K. We propose that the molecularly aligned crystalline phase formed in ASW is created by heterogeneous nucleation at the acetone-water interface, with resultant crystal growth, whereas the isotropic crystalline phase in CCl4 is formed by homogeneous crystal growth starting from the bulk region of the acetone sample.

Solid-phase micro-extraction in bioanalysis, exemplified by lidocaine determination

NARCIS (Netherlands)

de Jong, GJ; Koster, EHM

2000-01-01

Solid-phase micro-extraction (SPME) is a never sample preparation technique that can be used for gaseous, liquid or solid samples in conjunction with GC, HPLC or CE (e.g. [1]). The use of SPME for the analysis of drugs in biofluids is also becoming popular (e.g. [2]). The principle is that a fused

Development of headspace solid-phase microextraction method for ...

African Journals Online (AJOL)

A headspace solid-phase microextraction (HS-SPME) method was developed as a preliminary investigation using univariate approach for the analysis of 14 multiclass pesticide residues in fruits and vegetable samples. The gas chromatography mass spectrometry parameters (desorption temperature and time, column flow ...

Solid phase separation technique for use in radioimmunoassays

International Nuclear Information System (INIS)

Tu, J.I.

1979-01-01

A radioimmunoassay procedure, and article of manufacture for carrying out that procedure, are disclosed herein. The solid phase separation technique utilized in the radioimmunoassay of this invention utilizes a test tube, the internal surface of which has been coated with two antibody layers

The study of long-term stability in liquid-solid phases for HLW disposal

International Nuclear Information System (INIS)

Wei, Y.Y.; Tseng, C.L.; Yang, J.Y.; Ke, C.H.; Wang, T.H.; Jan, Y.L.; Lee, C.B.; Lan, P.L.; Hsu, C.N.; Tsai, S.C.; Li, M.H.; Teng, S.P.

2005-01-01

Full text of publication follows: This study is conducted to observe changes in both chemical properties of buffer materials and liquid phases over an experimental period of 2 years. In our experiments, bentonite powder and crushed granite are separately mixed with synthetic groundwater, synthetic seawater and de-ionised water at a fixed liquid-solid ratio of 30. A mixed set with both bentonite and granite together as solid phase is also investigated. During this study, aliquots of the liquid phases are sampled every two months and pH and Eh values are measured immediately. Concentrations of Na, Mg, K, Al, Ca, Ti, Mn, Ba, Fe, Sr, Li and Th are analyzed in the liquid phase directly by ICP-AES. After separation by centrifugation followed by freeze drying and digestion, the solid phases are analyzed as well for elemental composition. Alteration of solid phases during the experimental period is discussed. The preliminary results show that the pH values of the three solutions vary considerably in the individual experimental systems containing bentonite, granite or the mixed system. In general, higher pH values are found in DI-water for all solid phases. Eh values fluctuate a lot in the range 100 to 300 mV in all experiment sets. Different to the experiments with granite for which similar Eh values are found in all solutions, a significantly different Eh-value is found in the experiment with bentonite in DI-water as compared to the other solutions. The results from element analysis indicate that equilibrium is achieved after only two months and element concentrations change only slightly thereafter. We conclude from our experiments that both bentonite and granite keep their characteristics as radionuclide sorbents in the vicinity of a nuclear waste repository. Reaction equilibria appear to be attained rapidly. Because there are just a few alterations in this study, it would be a huge error source in analyzing from the inhomogeneous solid phase such as granite and losses

Studies in Solid Phase Peptide Synthesis: A Personal Perspective

Energy Technology Data Exchange (ETDEWEB)

Mitchell, A R

2007-06-01

By the early 1970s it had became apparent that the solid phase synthesis of ribonuclease A could not be generalized. Consequently, virtually every aspect of solid phase peptide synthesis (SPPS) was reexamined and improved during the decade of the 1970s. The sensitive detection and elimination of possible side reactions (amino acid insertion, N{sup {alpha}}-trifluoroacetylation, N{sup {alpha}{var_epsilon}}-alkylation) was examined. The quantitation of coupling efficiency in SPPS as a function of chain length was studied. A new and improved support for SPPS, the 'PAM-resin', was prepared and evaluated. These and many other studies from the Merrifield laboratory and elsewhere increased the general acceptance of SPPS leading to the 1984 Nobel Prize in Chemistry for Bruce Merrifield.

Extended defects in epitaxial Sc2O3 films grown on (111) Si

International Nuclear Information System (INIS)

Klenov, Dmitri O.; Edge, Lisa F.; Schlom, Darrell G.; Stemmer, Susanne

2005-01-01

Epitaxial Sc 2 O 3 films with the cubic bixbyite structure were grown on (111) Si by reactive molecular beam epitaxy. High-resolution transmission electron microscopy (HRTEM) revealed an abrupt, reaction-layer free interface between Sc 2 O 3 and Si. The ∼10% lattice mismatch between Si and Sc 2 O 3 was relieved by the formation of a hexagonal misfit dislocation network with Burgers vectors of 1/2 Si and line directions parallel to Si . A high density of planar defects and threading dislocations was observed. Analysis of lattice shifts across the planar defects in HRTEM showed that these faults were likely antiphase boundaries (APBs). ABPs form when film islands coalesce during growth because films nucleate with no unique arrangement of the ordered oxygen vacancies in the bixbyite structure relative to the Si lattice

Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

International Nuclear Information System (INIS)

Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

2010-01-01

SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

Solid phase stability of molybdenum under compression: Sound velocity measurements and first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Zhang, Xiulu [Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, P.O. Box 919-102, 621900 Mianyang, Sichuan (China); Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, 621010 Mianyang, Sichuan (China); Liu, Zhongli [Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, P.O. Box 919-102, 621900 Mianyang, Sichuan (China); College of Physics and Electric Information, Luoyang Normal University, 471022 Luoyang, Henan (China); Jin, Ke; Xi, Feng; Yu, Yuying; Tan, Ye; Dai, Chengda; Cai, Lingcang [Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, P.O. Box 919-102, 621900 Mianyang, Sichuan (China)

2015-02-07

The high-pressure solid phase stability of molybdenum (Mo) has been the center of a long-standing controversy on its high-pressure melting. In this work, experimental and theoretical researches have been conducted to check its solid phase stability under compression. First, we performed sound velocity measurements from 38 to 160 GPa using the two-stage light gas gun and explosive loading in backward- and forward-impact geometries, along with the high-precision velocity interferometry. From the sound velocities, we found no solid-solid phase transition in Mo before shock melting, which does not support the previous solid-solid phase transition conclusion inferred from the sharp drops of the longitudinal sound velocity [Hixson et al., Phys. Rev. Lett. 62, 637 (1989)]. Then, we searched its structures globally using the multi-algorithm collaborative crystal structure prediction technique combined with the density functional theory. By comparing the enthalpies of body centered cubic structure with those of the metastable structures, we found that bcc is the most stable structure in the range of 0–300 GPa. The present theoretical results together with previous ones greatly support our experimental conclusions.

Investigation of binary solid phases by calorimetry and kinetic modelling

NARCIS (Netherlands)

Matovic, M.

2007-01-01

The traditional methods for the determination of liquid-solid phase diagrams are based on the assumption that the overall equilibrium is established between the phases. However, the result of the crystallization of a liquid mixture will typically be a non-equilibrium or metastable state of the

Development and Application of Solid Phase Extraction Method for ...

African Journals Online (AJOL)

NICO

for the addition of organic modifier, sample load volume, conditioning solvent, washing solvent and ... Solid phase extraction, polycyclic aromatic hydrocarbons, water samples, ... such as polymeric, activated carbon or silica modified with.

Ion-selective solid-phase electrode sensitive to ammonium ions

International Nuclear Information System (INIS)

Vlasov, Yu.G.; Milonova, M.S.; Antonov, P.P.; Bychkov, E.A.; Ehfa, A.Ya.

1983-01-01

Ammonium phosphomolybdate is investigated for the purpose of using it as membrane material of ammonium-selective solid-phase electrodes. Estimation of proton mobility and ion conductivity of ammonium phosphomolybdate is performed

Solid-phase zirconium and fluoride species in alkaline zircaloy cladding waste at Hanford.

Science.gov (United States)

Reynolds, Jacob G; Huber, Heinz J; Cooke, Gary A; Pestovich, John A

2014-08-15

The United States Department of Energy Hanford Site, near Richland, Washington, USA, processed plutonium between 1944 and 1987. Fifty-six million gallons of waste of various origins remain, including waste from removing zircaloy fuel cladding using the so-called Zirflex process. The speciation of zirconium and fluoride in this waste is important because of the corrosivity and reactivity of fluoride as well as the (potentially) high density of Zr-phases. This study evaluates the solid-phase speciation of zirconium and fluoride using X-ray diffraction (XRD) and scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS). Two waste samples were analyzed: one waste sample that is relatively pure zirconium cladding waste from tank 241-AW-105 and another that is a blend of zirconium cladding wastes and other high-level wastes from tank 241-C-104. Villiaumite (NaF) was found to be the dominant fluoride species in the cladding waste and natrophosphate (Na7F[PO4]2 · 19H2O) was the dominant species in the blended waste. Most zirconium was present as a sub-micron amorphous Na-Zr-O phase in the cladding waste and a Na-Al-Zr-O phase in the blended waste. Some zirconium was present in both tanks as either rounded or elongated crystalline needles of Na-bearing ZrO2 that are up to 200 μm in length. These results provide waste process planners the speciation data needed to develop disposal processes for this waste. Copyright © 2014 Elsevier B.V. All rights reserved.

Surface photovoltage and photoluminescence study of thick Ga(In)AsN layers grown by liquid-phase epitaxy

International Nuclear Information System (INIS)

Donchev, V; Milanova, M; Lemieux, J; Shtinkov, N; Ivanov, I G

2016-01-01

We present an experimental and theoretical study of Ga(In)AsN layers with a thickness of around 1 μm grown by liquid-phase epitaxy (LPE) on n-type GaAs substrates. The samples are studied by surface photovoltage (SPV) spectroscopy and by photoluminescence spectroscopy. Theoretical calculations of the electronic structure and the spectral dependence of the dielectric function are carried out for different nitrogen concentrations using a full-band tight-binding approach in the sp 3 d 5 s*s N parameterisation. The SPV spectra measured at room temperature clearly show a red shift of the absorption edge with respect to the absorption of the GaAs substrate. This shift, combined with the results of the theoretical calculations, allows assessing the nitrogen concentration in different samples. The latter increases with increasing the In content. The analysis of the SPV phase spectra provides information about the alignment of the energy bands across the structures. The photoluminescence measurements performed at 2 K show a red shift of the emission energy with respect to GaAs, in agreement with the SPV results. (paper)

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

Energy Technology Data Exchange (ETDEWEB)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V. [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, C/Dr. Moliner 50, 46100 Burjassot (Spain)

2005-02-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including {theta}-2{theta} scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

X-ray characterization of CdO thin films grown on a-, c-, r- and m-plane sapphire by metalorganic vapour phase-epitaxy

International Nuclear Information System (INIS)

Zuniga-Perez, J.; Martinez-Tomas, C.; Munoz-Sanjose, V.

2005-01-01

CdO thin films have been grown on a-plane (11 anti 20), c-plane (0001), r-plane (01 anti 12) and m-plane (10 anti 10) sapphire substrates by metalorganic vapour-phase epitaxy (MOVPE). The effects of different substrate orientations on the structural properties of the films have been analyzed by means of X-ray diffraction, including θ-2θ scans, pole figures and rocking curves. (111), (001) and (110) orientations are found on a-, r-, and m-sapphire respectively, while films deposited on c-plane exhibit an orientation in which no low-index crystal plane is parallel to the sample surface. The recorded pole figures have allowed determining the epitaxial relationships between films and substrates, as well as the presence or absence of extended defects. The rocking curves indicate that high quality thin films, in terms of tilt and twist, can be obtained on r-, c- and m-plane sapphire, while further improvement is needed over the a-orientation. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Turski, H.; Muziol, G.; Wolny, P.; Cywiński, G.; Grzanka, S.; Sawicka, M.; Perlin, P.; Skierbiszewski, C.

2014-01-01

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ N ) during quantum wells (QWs) growth. We found that high Φ N improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold current density are discussed

Liquid-phase extraction coupled with metal-organic frameworks-based dispersive solid phase extraction of herbicides in peanuts.

Science.gov (United States)

Li, Na; Wang, Zhibing; Zhang, Liyuan; Nian, Li; Lei, Lei; Yang, Xiao; Zhang, Hanqi; Yu, Aimin

2014-10-01

Liquid-phase extraction coupled with metal-organic frameworks-based dispersive solid phase extraction was developed and applied to the extraction of pesticides in high fatty matrices. The herbicides were ultrasonically extracted from peanut using ethyl acetate as extraction solvent. The separation of the analytes from a large amount of co-extractive fat was achieved by dispersive solid-phase extraction using MIL-101(Cr) as sorbent. In this step, the analytes were adsorbed on MIL-101(Cr) and the fat remained in bulk. The herbicides were separated and determined by high-performance liquid chromatography. The experimental parameters, including type and volume of extraction solvent, ultrasonication time, volume of hexane and eluting solvent, amount of MIL-101(Cr) and dispersive solid phase extraction time, were optimized. The limits of detection for herbicides range from 0.98 to 1.9 μg/kg. The recoveries of the herbicides are in the range of 89.5-102.7% and relative standard deviations are equal or lower than 7.0%. The proposed method is simple, effective and suitable for treatment of the samples containing high content of fat. Copyright © 2014 Elsevier B.V. All rights reserved.

Reactive Power Injection Strategies for Single-Phase Photovoltaic Systems Considering Grid Requirements

DEFF Research Database (Denmark)

Yang, Yongheng; Wang, Huai; Blaabjerg, Frede

2014-01-01

.g. Germany and Italy. Those advanced features can be provided by next generation PV systems, and will be enhanced in the future to ensure an even efficient and reliable utilization of PV systems. In light of this, Reactive Power Injection (RPI) strategies for single-phase PV systems are explored...... in this paper. The RPI possibilities are: a) constant average active power control, b) constant active current control, c) constant peak current control and d) thermal optimized control strategy. All those strategies comply with the currently active grid codes, but are with different objectives. The proposed...... RPI strategies are demonstrated firstly by simulations and also tested experimentally on a 1 kW singe-phase grid-connected system in LVRT operation mode. Those results show the effectiveness and feasibilities of the proposed strategies with reactive power control during LVRT operation. The design...

Facile synthesis of aliphatic isothiocyanates and thioureas on solid phase using peptide coupling reagents

DEFF Research Database (Denmark)

Boas, Ulrik; Andersen, Heidi Gertz; Christensen, Jørn B.

2004-01-01

Peptide coupling reagents can be used as versatile reagents for the formation of aliphatic isothiocyanates and thioureas on solid phase from the corresponding solid-phase anchored aliphatic primary amines. The formation of the thioureas is fast and highly chemoselective, and proceeds via formatio...

Tetraphenylimidodiphosphinate as solid phase extractant for preconcentrative separation of thorium from aqueous solution

International Nuclear Information System (INIS)

Na Liu; Yanfei Wang; Chuhua He

2016-01-01

A simple and reliable method for solid phase extraction of thorium using tetraphenylimidodiphosphinate is presented. The solid phase extraction process was optimized at equilibrium time 3 h, pH = 4.5, initial concentration 30 mg L -1 and extractant dosage 0.01 g with 98.95 % of removal efficiency and 29.68 mg g -1 of adsorption capacity. The interfering ions experiments indicated that it had almost no effect on thorium adsorption. Kinetics data follow the pseudo-first-order model and equilibrium data agreed with the Langmuir isotherm model very well. FT-IR analysis indicated that imino group and phosphoryl acted as the significant roles in the solid phase extraction process. (author)

A Chemo-Mechanical Model of Diffusion in Reactive Systems

Directory of Open Access Journals (Sweden)

Kerstin Weinberg

2018-02-01

Full Text Available The functional properties of multi-component materials are often determined by a rearrangement of their different phases and by chemical reactions of their components. In this contribution, a material model is presented which enables computational simulations and structural optimization of solid multi-component systems. Typical Systems of this kind are anodes in batteries, reactive polymer blends and propellants. The physical processes which are assumed to contribute to the microstructural evolution are: (i particle exchange and mechanical deformation; (ii spinodal decomposition and phase coarsening; (iii chemical reactions between the components; and (iv energetic forces associated with the elastic field of the solid. To illustrate the capability of the deduced coupled field model, three-dimensional Non-Uniform Rational Basis Spline (NURBS based finite element simulations of such multi-component structures are presented.

Zirconium determination in rocks by solid-phase spectrophotometry

International Nuclear Information System (INIS)

Brykina, G.D.; Lebedeva, G.G.; Agapova, G.F.; AN SSSR, Moscow

1990-01-01

A method was developed for determination of zirconium in rocks by solid-phase spectrophotometry using AV-17x8-Cl anion exchanger modified with xylenol orange. Relative standard deviation at the level of (2-4.9)x10 -3 % ZrO 2 was about 0.245

Solid Phase Radioimmunoassay for Measuring Serum Prolactin Using Antibody Coupled Magnetizable Particles

International Nuclear Information System (INIS)

El-Bayoumy, A.S.A.

2012-01-01

The objective of the present work was to prepare solid phase radioimmunoassay (RIA) reagents. Development as well as optimization and validation of RIA system using solid phase magnetic particles for the measurement of prolactin (PRL) in human serum are described. The production of polyclonal antibodies was carried out by immunizing three Balb/C mice intraperitoneal through primary injection and two booster doses. Low density magnetizable cellulose iron oxide particles have been used to couple covalently to the IgG fraction of polyclonal anti-prolactin using carbonyl diimidazole activation method and applied as a solid phase separating agent for RIA of serum prolactin. Preparation of 125 I-PRL tracer was prepared using lactoperoxidase method and it was purified by gel filtration using sephadex G-100. The PRL standards were prepared using a highly purified PRL antigen with assay buffer as standard matrix. Optimization and validation of the assay were carried out. The results obtained provide a low cost, simple, sensitive, specific and accurate RIA system of prolactin based on magnetizable solid phase separation. These magnetic particles retain their characteristics during storage for 6 months at 4 degree C. In conclusion, this assay could be used as a useful diagnostic tool for pituitary dysfunction and possible reproductive disability.

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Science.gov (United States)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe; Jiang, Haiwei

2018-04-27

The growth mechanism of GaN epitaxial layers on mechanically exfoliated graphite is explained in detail based on classic nucleation theory. The number of defects on the graphite surface can be increased via O-plasma treatment, leading to increased nucleation density on the graphite surface. The addition of elemental Al can effectively improve the nucleation rate, which can promote the formation of dense nucleation layers and the lateral growth of GaN epitaxial layers. The surface morphologies of the nucleation layers, annealed layers and epitaxial layers were characterized by field-emission scanning electron microscopy, where the evolution of the surface morphology coincided with a 3D-to-2D growth mechanism. High-resolution transmission electron microscopy was used to characterize the microstructure of GaN. Fast Fourier transform diffraction patterns showed that cubic phase (zinc-blend structure) GaN grains were obtained using conventional GaN nucleation layers, while the hexagonal phase (wurtzite structure) GaN films were formed using AlGaN nucleation layers. Our work opens new avenues for using highly oriented pyrolytic graphite as a substrate to fabricate transferable optoelectronic devices.

Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

Science.gov (United States)

Malguth, E.; Hoffmann, A.; Phillips, M. R.

2008-12-01

We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)-A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.

Epitaxial GaN around ZnO nanopillars

Energy Technology Data Exchange (ETDEWEB)

Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

2011-07-01

We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

Microwave assisted solid phase extraction for separation preconcentration sulfamethoxazole in wastewater using tyre based activated carbon as solid phase material prior to spectrophotometric determination

Science.gov (United States)

Mogolodi Dimpe, K.; Mpupa, Anele; Nomngongo, Philiswa N.

2018-01-01

This work was chiefly encouraged by the continuous consumption of antibiotics which eventually pose harmful effects on animals and human beings when present in water systems. In this study, the activated carbon (AC) was used as a solid phase material for the removal of sulfamethoxazole (SMX) in wastewater samples. The microwave assisted solid phase extraction (MASPE) as a sample extraction method was employed to better extract SMX in water samples and finally the analysis of SMX was done by the UV-Vis spectrophotometer. The microwave assisted solid phase extraction method was optimized using a two-level fractional factorial design by evaluating parameters such as pH, mass of adsorbent (MA), extraction time (ET), eluent ratio (ER) and microwave power (MP). Under optimized conditions, the limit of detection (LOD) and limit of quantification (LOQ) were 0.5 μg L- 1 and 1.7 μg L- 1, respectively, and intraday and interday precision expressed in terms of relative standard deviation were > 6%.The maximum adsorption capacity was 138 mg g- 1 for SMX and the adsorbent could be reused eight times. Lastly, the MASPE method was applied for the removal of SMX in wastewater samples collected from a domestic wastewater treatment plant (WWTP) and river water.

Solid Phase Characterization Of Heel Samples From Tank 241-C-110

International Nuclear Information System (INIS)

Page, J.S.; Cooke, G.A.; Pestovich, J.A.; Huber, H.J.

2011-01-01

During sluicing operations of tank 241-C-110, a significant amount of solids were unable to be retrieved. These solids (often referred to as the tank 'heel') were sampled in 2010 and chemically and mineralogically analyzed in the 222-S Laboratory. Additionally, dissolution tests were performed to identify the amount of undissolvable material after using multiple water contacts. This report covers the solid phase characterization of six samples from these tests using scanning electron microscopy, polarized light microscopy, and X-ray diffraction. The chemical analyses, particle size distribution analysis, and dissolution test results are reported separately. Two of the samples were from composites created from as-received material - Composite A and Composite B. The main phase in these samples was sodium-fluoride-phosphate hydrate (natrophosphate) - in the X-ray diffraction spectra, this phase was the only phase identifiable. Polarized light microscopy showed the presence of minor amounts of gibbsite and other phases. These phases were identified by scanning electron microscopy - energy dispersive X-ray spectroscopy as sodium aluminosilicates, sodium diuranate, and sodium strontium phosphate hydrate (nastrophite) crystals. The natrophosphate crystals in the scanning electron microscopy analysis showed a variety of erosive and dissolution features from perfectly shaped octahedral to well-rounded appearance. Two samples were from water-washed Composites A and B, with no change in mineralogy compared to the as-received samples. This is not surprising, since the water wash had only a short period of water contact with the material as opposed to the water dissolution tests. The last two samples were residual solids from the water dissolution tests. These tests included multiple additions of water at 15 C and 45 C. The samples were sieved to separate a coarser fraction of > 710 μm and a finer fraction of < 710 μm. These two fractions were analyzed separately. The coarser

The Effects of Solid Phase Additives on Sintering Properties of Alumina Bioceramic

Institute of Scientific and Technical Information of China (English)

WANG Xin-yu; LI Shi-pu; HE Jian-hua; JIANG Xin; LI Jian-hua

2003-01-01

In order to reduce the sintering temperature and improve the preparing conditions of alumina bioceramics,the Mg-Zr-Y composite solid phase additives were added into high purity Al2O3 micro-powder by chemical coprecipitation method.The powder was shaped under 200MPa cold isostatic pressure,and then the biscuits were sintered at 1600℃ under normal pressure.The sintered alumina materials were tested and the sintering mechanism was discussed.The results show that physical properties of the material were improved comparatively.The Mg-Zr-Y composite solid additives could promote the sintering of alumina bioceramics and the mechanism is solid phase sintering.

Solid-state phase equilibria in the Fe-Pt-Pr ternary system at 1173 K

International Nuclear Information System (INIS)

Ren Jing; Gu Zhengfei; Cheng Gang; Zhou Huaiying

2005-01-01

The solid-state phase equilibria in the Fe-Pt-Pr ternary system at 1173 K (Pr ≤ 70%) were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersion spectroscopy (EDS) techniques. The 1173 K isothermal section consists of 13 single-phase regions, 22 two-phase regions and 10 three-phase regions. At 1173 K, we have observed that the maximum solid solubility of Pt in α-Fe is below 1.5 at.% and the solid solution region of Pt in γ-Fe is from 2 to 35 at.%; the maximum solid solubility of Fe in Pt is 18 at.%. The maximum solubility of Fe in PrPt 5 , PrPt 3 , PrPt 2 , Pr 3 Pt 4 , PrPt, Pr 3 Pt 2 and Pr 7 Pt 3 is below 1 at.%. The maximum solubility of Pr in α-(Fe, Pt), γ-(Fe, Pt), FePt, FePt 3 and (Pt, Fe) (the solid solution of Fe in Pt) is 6, 2, 4, 4.5 and 1.5 at.%, respectively. In this work, it is found that the phase Pr 3 Pt 4 does not exist in the ternary system. The binary compounds Fe 7 Pr and Fe 2 Pr and any new ternary compounds were not observed

Practical solid and liquid phase markers for studying gastric emptying in man

International Nuclear Information System (INIS)

Thomforde, G.M.; Brown, M.L.; Malagelada, J.R.

1985-01-01

This paper presents a method used to evaluate solid and liquid phase markers for radionuclide gastric emptying studies. The authors conducted in vitro and in vivo comparative experiments employing several radiolabeled markers. Among the solid phase markers tested, Tc-99m-sulfur colloid in vivo-labeled liver and I-131-fiber performed optimally. However, Tc-99M sulfur colloid in scrambled egg showed very acceptable performance and it is significantly easier to prepare. Among liquid phase markers, they found In-111-DTPA stabilized with 1% albumin to be a good agent and appropriate for dual isotope emptying studies

High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

International Nuclear Information System (INIS)

Miller, B.I.; Young, M.G.; Oron, M.; Koren, U.; Kisker, D.

1990-01-01

High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH 3 . Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I th as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η D were as high as 21%/facet with a low internal loss α=21 cm -1 . In addition I th as low as 18 mA and η D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH 3 without compromising on laser performance

Renewable glycolaldehyde isolation from pyrolysis oil-derived aqueous solution by reactive extraction with primary amines

NARCIS (Netherlands)

Vitasari, C.R.; Meindersma, G.W.; Haan, de A.B.

2012-01-01

Glycolaldehyde can be separated from a pyrolysis oil-derived aqueous phase by reactive extraction employing primary amines dissolved in organic diluents. This work investigates the occurrence of solid imine formation from glycolaldehyde and amines and the competitive reactions in the organic extract

Solid-phase synthesis of 3-amino-2-pyrazolines

DEFF Research Database (Denmark)

Nielsen, John

1998-01-01

The development of a solid-phase synthesis of 3-amino-2-pyrazolines is described. Conjugate addition of hydrazines to alpha,beta-unsaturated nitriles followed by cyclization yields 3-amino-2-pyrazolines. Acylation or sulfonation of the free amino-group yields a 24 member library of 3-amino-2...

Solid-Phase Extraction Combined with High Performance Liquid ...

African Journals Online (AJOL)

Methods: Solid-phase extraction method was employed for the extraction of the estrogen from milk and high performance liquid chromatography-diode array detector (HPLC-DAD) was used for the determination of estrogen. Results: Optimal chromatographic conditions were achieved on an Eclipse XDB-C18 column at a ...

Experimental design for reflection measurements of highly reactive liquid or solid substances with application to liquid sodium

International Nuclear Information System (INIS)

Chan, S.H.; Gossler, A.A.

1980-01-01

This technical report describes the experimental part of a program on thermal radiation properties of reactor materials. A versatile goniometer system with associated electronic components and mechanical instruments has been assembled. It is designed to measure spectral, specular reflectances of highly reactive liquid or solid substances over a spectral range of 0.3 μ to 9 μ and incidence angles of 12 0 to 30 0 off the normal direction. The capability of measuring reflectances of liquid substances clearly distinguishes this experimental design from conventional systems which are applicable only to solid substances. This design has been used to measure the spectral, specular reflectance of liquid sodium and preliminary results obtained are compared with those of solid sodium measured by other investigators

Lattice Boltzmann based multicomponent reactive transport model coupled with geochemical solver for scale simulations

NARCIS (Netherlands)

Patel, R.A.; Perko, J.; Jaques, D.; De Schutter, G.; Ye, G.; Van Breugel, K.

2013-01-01

A Lattice Boltzmann (LB) based reactive transport model intended to capture reactions and solid phase changes occurring at the pore scale is presented. The proposed approach uses LB method to compute multi component mass transport. The LB multi-component transport model is then coupled with the

Electrical performance of phase change memory cells with Ge3Sb2Te6 deposited by molecular beam epitaxy

International Nuclear Information System (INIS)

Boschker, Jos E.; Riechert, Henning; Calarco, Raffaella; Boniardi, Mattia; Redaelli, Andrea

2015-01-01

Here, we report on the electrical characterization of phase change memory cells containing a Ge 3 Sb 2 Te 6 (GST) alloy grown in its crystalline form by Molecular Beam Epitaxy (MBE). It is found that the high temperature growth on the amorphous substrate results in a polycrystalline film exhibiting a rough surface with a grain size of approximately 80–150 nm. A detailed electrical characterization has been performed, including I-V characteristic curves, programming curves, set operation performance, crystallization activation at low temperature, and resistance drift, in order to determine the material related parameters. The results indicate very good alignment of the electrical parameters with the current state-of-the-art GST, deposited by physical vapor deposition. Such alignment enables a possible employment of the MBE deposition technique for chalcogenide materials in the phase change memory technology, thus leading to future studies of as-deposited crystalline chalcogenides as integrated in electrical vehicles

The liquid phase epitaxy approach for the successful construction of ultra-thin and defect-free ZIF-8 membranes: Pure and mixed gas transport study

KAUST Repository

Shekhah, Osama; Swaidan, Raja; Belmabkhout, Youssef; Du Plessis, Marike; Jacobs, Tia; Barbour, Leonard J.; Pinnau, Ingo; Eddaoudi, Mohamed

2014-01-01

The liquid-phase epitaxy (LPE) method was effectively implemented to deliberately grow/construct ultrathin (0.5-1 μm) continuous and defect-free ZIF-8 membranes. Permeation properties of different gas pair systems (O 2-N2, H2-CO2, CO2-CH 4, C3H6-C3H8, CH 4-n-C4H10) were studied using the time lag technique. This journal is © The Royal Society of Chemistry.

Silica Modified with Polyaniline as a Potential Sorbent for Matrix Solid Phase Dispersion (MSPD) and Dispersive Solid Phase Extraction (d-SPE) of Plant Samples

Science.gov (United States)

Sowa, Ireneusz; Wójciak-Kosior, Magdalena; Strzemski, Maciej; Sawicki, Jan; Staniak, Michał; Dresler, Sławomir; Szwerc, Wojciech; Mołdoch, Jarosław; Latalski, Michał

2018-01-01

Polyaniline (PANI) is one of the best known conductive polymers with multiple applications. Recently, it was also used in separation techniques, mostly as a component of composites for solid-phase microextraction (SPME). In the present paper, sorbent obtained by in situ polymerization of aniline directly on silica gel particles (Si-PANI) was used for dispersive solid phase extraction (d-SPE) and matrix solid–phase extraction (MSPD). The efficiency of both techniques was evaluated with the use of high performance liquid chromatography with diode array detection (HPLC-DAD) quantitative analysis. The quality of the sorbent was verified by Raman spectroscopy and microscopy combined with automated procedure using computer image analysis. For extraction experiments, triterpenes were chosen as model compounds. The optimal conditions were as follows: protonated Si-PANI impregnated with water, 160/1 sorbent/analyte ratio, 3 min of extraction time, 4 min of desorption time and methanolic solution of ammonia for elution of analytes. The proposed procedure was successfully used for pretreatment of plant samples. PMID:29565297

Improvement of electrical property of Si-doped GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

International Nuclear Information System (INIS)

Kusakabe, K.; Furuzuki, T.; Ohkawa, K.

2006-01-01

Electrical property of Si-doped GaN layers grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. The electron mobility was drastically improved when GaN was grown by means of optimized combinations of growth temperature and low-temperature GaN buffer thickness. The highest room-temperature mobility of 220cm 2 /Vs was recorded at the carrier density of 1.1x10 18 cm -3 . Temperature dependence of electrical property revealed that the peak mobility of 234cm 2 /Vs was obtained at 249K. From the slope of carrier density as a function of inverse temperature, the activation energy of Si-donors was evaluated to be 11meV

Some properties of Ga-As-Alsub(x)Gasub(1-x)As heterojunction grown by low temperature liquid phase epitaxy

International Nuclear Information System (INIS)

Yu Lisheng; Liu Hongxun; Zhang Bei; Wang Shumin

1986-03-01

GaAs-Alsub(x)Gasub(1-x)As heterojunction was grown by liquid phase epitaxy at low growth temperature 650-700 deg. C. The series resistance of heterojunction with DH laser structure was measured. Doping properties of Mg in GaAs and Alsub(x)Gasub(1-x)As were investigated. It is found that impurity concentration of Mg as high as 10 18 cm -3 can be doped easily. The Shubnikov-de-Haas oscillation was observed in GaAs-N Alsub(0.35)Gasub(0.65)As heterointerface. It is demonstrated that in these heterointerfaces there exists 2DEG with some contribution from 3D electron of N-AlGaAs layer. (author)

Microwave-assisted solid-phase Ugi four-component condensations

DEFF Research Database (Denmark)

Nielsen, John

1999-01-01

An 18-member library was constructed from 2 isocyanides, 3 aldehydes and 3 carboxylic acids via microwave-assisted solid-phase Ugi reactions on TentaGel S RAM. Products of high purity were obtained in moderate to excellent yields after reaction times of 5 minutes or less (irradiation at 60W). (C...

Development of a solid-phase assay for measurement of proteolytic enzyme activity

International Nuclear Information System (INIS)

Varani, J.; Johnson, K.; Kaplan, J.

1980-01-01

A solid-phase, plate assay was developed for the measurement of proteolytic enzyme activity. In this assay procedure, radiolabeled substrates were dried onto the surface of microtiter wells. Following drying, the wells were washed two times with saline to remove the nonadherent substrate. When proteolytic enzymes were added to the wells, protein hydrolysis occurred, releasing radioactivity into the supernatant fluid. The amount of protein hydrolysis that occurred was reflected by the amount of radioactivity in the supernatant fluid. When 125 I-hemoglobin was used as the substrate, it was as susceptible to hydrolysis by trypsin in the solid-phase assay as it was in solution in a standard assay procedure. Protease activity from a variety of sources (including from viable cells as well as from extracellular sources) were also able to hydrolyze the hemoglobin on the plate. 125 I-Labeled serum albumen, fibrinogen, and rat pulmonary basement membrane were also susceptible to hydrolysis by trypsin in the solid phase. When [ 14 C]elastin was dried onto the plate, it behaved in a similar manner to elastin in solution. It was resistant to hydrolysis by nonspecific proteases such as trypsin and chymotrypsin but was highly susceptible to hydrolysis by elastase. The solid-phase plate assay has several features which recommended it for routine use. It is as sensitive as standard tube assays (and much more sensitive than routinely used colormetric assays). It is quick and convenient; there are no precipitation, centrifugation, or filtration steps. In addition, very small volumes of radioactive wastes are generated. Another advantage of the solid-phase plate assay is the resistance of the dried substrates to spontaneous breakdown and to microbial contamination. Finally, this assay is suitable for use with viable cells as well as for extracellular proteases

Effect of high temperature deposition on CoSi2 phase formation

International Nuclear Information System (INIS)

Comrie, C. M.; Ahmed, H.; Smeets, D.; Demeulemeester, J.; Vantomme, A.; Turner, S.; Van Tendeloo, G.; Detavernier, C.

2013-01-01

This paper discusses the nucleation behaviour of the CoSi to CoSi 2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi 2 , its growth behaviour, and the epitaxial quality of the CoSi 2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi 2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi 2 nucleation temperature above that of CoSi 2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi 2 growth occurs as a function of deposition temperature. First, the CoSi 2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi 2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi 2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi 2 growth mechanism.

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

KAUST Repository

Lorenz, K.; Alves, E.; Roqan, Iman S.; O’ Donnell, K. P.; Nishikawa, A.; Fujiwara, Y.; Boćkowski, M.

2010-01-01

Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

KAUST Repository

Lorenz, K.

2010-09-16

Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

Energy Technology Data Exchange (ETDEWEB)

Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

2017-03-15

InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Hepatitis B reactivation and rituximab: a new boxed warning and considerations for solid organ transplantation.

Science.gov (United States)

Martin, S T; Cardwell, S M; Nailor, M D; Gabardi, S

2014-04-01

Use of rituximab, a chimeric monoclonal antibody directed at the CD20 antigen, continues to increase in solid organ transplantation (SOT) for several off-label uses. In September 2013, the United States Food and Drug Administration (FDA) issued a Drug Safety Communication to oncology, rheumatology and pharmacy communities outlining a new Boxed Warning for rituximab. Citing 109 cases of fatal hepatitis B virus (HBV) reactivation in persons receiving rituximab therapy with previous or chronic HBV infection documented in their Adverse Event Reporting System (AERS), the FDA recommends screening for HBV serologies in all patients planned to receive rituximab and antiviral prophylaxis in any patient with a positive history of HBV infection. There is a lack of data pertaining to this topic in the SOT population despite an increase in off-label indications. Previous reports suggest patients receiving rituximab, on average, were administered six doses prior to HBV reactivation. Recommendations on prophylaxis, treatment and re-challenging patients with therapy after resolution of reactivation remain unclear. Based on data from the FDA AERS and multiple analyses in oncology, SOT providers utilizing rituximab should adhere to the FDA warnings and recommendations regarding HBV reactivation until further data are available in the SOT population. © Copyright 2014 The American Society of Transplantation and the American Society of Transplant Surgeons.

A study of coal-solid waste blend reactivity

Directory of Open Access Journals (Sweden)

Nayibe Guerrero

2008-05-01

Full Text Available The Flynn-Wall-Ozawa method was used for analysing coal-solid waste blend reactivity in an oxidising atmosphere. The presence of biomass strongly affected coal combustion kinetics when the blend contained more than 30% of it. Activation energy values (evaluated by different blends were 28.7495 kJ/mol for 0% biomass, 31.3915 kJ/mol for 30% biomass, 39.0365 kJ/mol for 50% biomass, 102.431 kJ/mol for 70% biomass and 107.8075 kJ/mol for 100% biomass; these values were close to those reported in the literature. First-order kinetics correlated the data ve-ry well for the 100% coal sample and the blend having 30% biomass and 70% coal. Eighth-order kinetics were more suitable for correlating the experimental data for the 70% biomass-30% coal blend and the 100% biomass sample. Combustion was done without previous pyrolysis of the blends; however segregation of phenomena could be appre-ciated. This seems to indicate that combustion and devolatilisation are independent processes which should be taken into account when building equipment using these kinds of blend.

Investigation into process of solid-phase synthesis of calcium vanadates

International Nuclear Information System (INIS)

Fotiev, A.A.; Krasnenko, T.I.; Slobodin, B.V.

1983-01-01

Processes of solid-phase synthesis of calcium vanadates by Toubandt method, measuring electric conductivity and Ca 45 and V 48 radioactive indicators are investigated. It is shown that reaction diffusion during calcium vanadates production from oxides is ensured by calcium and oxygen ions or calcium ions and electrons through the product layer, as to oxygen - through the gas phase

Aqueous Microwave-Assisted Solid-Phase Synthesis Using Boc-Amino Acid Nanoparticles

Directory of Open Access Journals (Sweden)

Yoshinobu Fukumori

2013-07-01

Full Text Available We have previously developed water-based microwave (MW-assisted peptide synthesis using Fmoc-amino acid nanopaticles. It is an organic solvent-free, environmentally friendly method for peptide synthesis. Here we describe water-based MW-assisted solid-phase synthesis using Boc-amino acid nanoparticles. The microwave irradiation allowed rapid solid-phase reaction of nanoparticle reactants on the resin in water. We also demonstrated the syntheses of Leu-enkephalin, Tyr-Gly-Gly-Phe-Leu-OH, and difficult sequence model peptide, Val-Ala-Val-Ala-Gly-OH, using our water-based MW-assisted protocol with Boc-amino acid nanoparticles.

Solid phase radioimmunoassay for HBe Ag and anti-HBe