Theoretical analysis of compatibility of several reinforcement materials with NiAl and FeAl matrices

Science.gov (United States)

Misra, Ajay K.

1989-01-01

Several potential reinforcement materials were assessed for their chemical, coefficient of thermal expansion (CTE), and mechanical compatibility with the intermetallic matrices based on NiAl and FeAl. Among the ceramic reinforcement materials, Al2O3, TiC, and TiB2, appear to be the optimum choices for NiAl and FeAl matrices. However, the problem of CTE mismatch with the matrix needs to be solved for these three reinforcement materials. Beryllium-rich intermetallic compounds can be considered as potential reinforcement materials provided suitable reaction barrier coatings can be developed for these. Based on preliminary thermodynamic calculations, Sc2O3 and TiC appear to be suitable as reaction barrier coatings for the beryllides. Several reaction barrier coatings are also suggested for the currently available SiC fibers.

First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters

Science.gov (United States)

Li, Zhi; Zhou, Zhonghao; Wang, Hongbin; Li, Shengli; Zhao, Zhen

2016-09-01

The geometries, relative stability as well as growth strategies of the AlnZr (n=1-9) clusters are investigated with spin polarized density functional theory: BLYP. The results reveal that the AlnZr clusters are more likely to form the dense accumulation structures than the AlN (N=1-10) clusters. The average binding energies of AlnZr are higher than those of AlN clusters. The AlnZr (n=3, 5, and 7) clusters are more stable than others by the differences of the total binding energies. Mülliken population analysis for the AlnZr clusters shows that the electron's adsorption ability of Zr is slightly lower than that of Al except for AlZr cluster. Local peaks of the HOMO-LUMO gap curve are found at n=3, 5, and 7. The reaction energies of AlnZr are higher, which means that AlnZr clusters are easier to react with Al clusters. Zr atom preferential reacts with Al2 cluster. Local peaks of the magnetic dipole moments are found at n=2, 5, and 8.

The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

NARCIS (Netherlands)

Tran, Tuan; Pandraud, G.; Tichelaar, F.D.; Nguyen, Duc Minh; Schellevis, H.; Sarro, P.M.

2013-01-01

The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN

Catalisadores Ni/Al2O3 promovidos com molibdênio para a reação de reforma a vapor de metano Mo-Ni/AL2O3 catalysts for the methane steam reforming reaction

Directory of Open Access Journals (Sweden)

Silvia Sálua Maluf

2003-03-01

Full Text Available Mo-promoted Ni/Al2O3 catalysts for the methane steam reforming reaction were studied in this work. The Ni/Al2O3 catalysts were prepared by precipitation and molibdenum was added by impregnation up to 2%wt. The solids were tested using a micro-reactor under two H2Ov/C conditions and were characterized by ICP-OES, XRD, N2 adsoption, H2 chemisorption and TPR. NiO and NiAl2O4 phases were observed and the metallic area decreased with the increase of the Mo content. From the catalytic tests high stability was verified for H2Ov/C=4.0. On the other hand, only the catalyst containing 0,05% Mo stayed stable during 30 hours of the test at H2Ov/C=2.0.

Solid-state reactions to synthesize nanostructured lead selenide semiconductor powders by high-energy milling

Energy Technology Data Exchange (ETDEWEB)

Rojas-Chavez, H., E-mail: uu_gg_oo@yahoo.com.mx [Centro de Investigacion e Innovacion Tecnologica - IPN, Cerrada de CECATI s/n, Col. Santa Catarina, Del. Azcapotzalco (Mexico) and Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada - IPN, Legaria 694, Col. Irrigacion, Del. Miguel Hidalgo (Mexico); Reyes-Carmona, F. [Facultad de Quimica - UNAM, Circuito de la Investigacion Cientifica s/n, C.U. Del. Coyoacan (Mexico); Jaramillo-Vigueras, D. [Centro de Investigacion e Innovacion Tecnologica - IPN, Cerrada de CECATI s/n, Col. Santa Catarina, Del. Azcapotzalco (Mexico)

2011-10-15

Highlights: {yields} PbSe synthesized from PbO instead of Pb powder do not require an inert atmosphere. {yields} During high-energy milling oxygen has to be chemically reduced from the lead oxide. {yields} Solid-state and solid-gas chemical reactions promote both solid and gaseous products. -- Abstract: Both solid-solid and gas-solid reactions have been traced during high-energy milling of Se and PbO powders under vial (P, T) conditions in order to synthesize the PbSe phase. Chemical and thermodynamic arguments are postulated to discern the high-energy milling mechanism to transform PbO-Se micropowders onto PbSe-nanocrystals. A set of reactions were evaluated at around room temperature. Therefore an experimental campaign was designed to test the nature of reactions in the PbO-Se system during high-energy milling.

Solid-state reactions to synthesize nanostructured lead selenide semiconductor powders by high-energy milling

International Nuclear Information System (INIS)

Rojas-Chavez, H.; Reyes-Carmona, F.; Jaramillo-Vigueras, D.

2011-01-01

Highlights: → PbSe synthesized from PbO instead of Pb powder do not require an inert atmosphere. → During high-energy milling oxygen has to be chemically reduced from the lead oxide. → Solid-state and solid-gas chemical reactions promote both solid and gaseous products. -- Abstract: Both solid-solid and gas-solid reactions have been traced during high-energy milling of Se and PbO powders under vial (P, T) conditions in order to synthesize the PbSe phase. Chemical and thermodynamic arguments are postulated to discern the high-energy milling mechanism to transform PbO-Se micropowders onto PbSe-nanocrystals. A set of reactions were evaluated at around room temperature. Therefore an experimental campaign was designed to test the nature of reactions in the PbO-Se system during high-energy milling.

Structural features in Ni-Al alloys

International Nuclear Information System (INIS)

Abylkalykova, R.B.; Kveglis, L.I.; Rakhimova, U.A.; Nasokhova, Sh.B.; Tazhibaeva, G.B.

2007-01-01

Purpose of the work is study of structural transformations under diverse memory effect in Ni-Al alloys. Examination were conducted in following composition samples: Ni -75 at.% and Al - 25 at.%. The work is devoted to clarification reasons both formation atom-ordered structures in inter-grain boundaries of bulk samples under temperature action and static load. Revealed inter-grain inter-boundary layers in Ni-Al alloy both bulk and surface state have complicated structure

Hydrogenation/Deoxygenation (H/D Reaction of Furfural-Acetone Condensation Product using Ni/Al2O3-ZrO2 Catalyst

Directory of Open Access Journals (Sweden)

Adam Mahfud

2016-08-01

Full Text Available The catalytic hydrogenation/deoxygenation (H/D reaction was carried out using Ni/Al2O3-ZrO2 catalyst. The 10% (wt/wt of Ni were impregnated on Al2O3-ZrO2 (10NiAZ by wet impregnation method followed by calcination and reduction. X-Ray diffraction analysis showed that Nideposited on the surface, with specific surface areas (SBET was 48.616 m2/g. Catalyst performance were evaluated for H/D reaction over furfural-acetone condensation products, mixture of 2-(4-furyl-3-buten-2-on and 1,5-bis-(furan-2-yl-pentan-3-one. The reaction was carried out in a batch, performed at 150°C for 8 hours. The H/D reaction gave alkane derivatives C8 and C10 by hydrogenation process followed by ring opening of furan in 15.2% yield. While, oxygenated product C10-C13 were also detected in 17.2% yield. The increasing of pore volume of 10NiAZ might enhance catalyst activity over H/D reaction. The alkene C=C bond was easy to hydrogenated under this condition by the lower bond energy gap.

Neutron diffraction study of the reduction of NiAl2O4

International Nuclear Information System (INIS)

Ustundag, E.; Clausen, B.; Bourke, M. A. M.

2000-01-01

The reduction of a solid NiAl 2 O 4 cylinder to a metal-ceramic composite consisting of Ni particles in an Al 2 O 3 matrix was monitored in situ at 1220 degree sign C with neutron powder diffraction. The reaction kinetics was determined with a time resolution of 30 min. The reduction is associated with a volume shrinkage. A comparison of finite element calculations and the changes in the measured lattice parameters suggests that creep has relaxed the residual strains that would otherwise result from the volume shrinkage. The data also indicate that structural evolution in unreduced NiAl 2 O 4 via a change in the cationic sublattice towards inverse spinel occurred and that led to a variation in lattice parameters. (c) 2000 American Institute of Physics

Physical and mechanical metallurgy of NiAl

Science.gov (United States)

Noebe, Ronald D.; Bowman, Randy R.; Nathal, Michael V.

1994-01-01

Considerable research has been performed on NiAl over the last decade, with an exponential increase in effort occurring over the last few years. This is due to interest in this material for electronic, catalytic, coating and especially high-temperature structural applications. This report uses this wealth of new information to develop a complete description of the properties and processing of NiAl and NiAl-based materials. Emphasis is placed on the controlling fracture and deformation mechanisms of single and polycrystalline NiAl and its alloys over the entire range of temperatures for which data are available. Creep, fatigue, and environmental resistance of this material are discussed. In addition, issues surrounding alloy design, development of NiAl-based composites, and materials processing are addressed.

Joining of Ni-TiC FGM and Ni-Al Intermetallics by Centrifugal Combustion Synthesis

International Nuclear Information System (INIS)

Ohmi, Tatsuya; Matsuura, Kiyotaka; Iguchi, Manabu; Mizuma, Kiminori

2008-01-01

A centrifugal combustion synthesis (CCS) process has been investigated to join a Ni-Al intermetallic compound and a Ni-TiC cermet. The cermet, a tubular graphite mold, and a green compact of reactants consisting of Al, Ni and NiO were set in a centrifugal caster. When the combustion synthesis reaction was induced in the centrifugal force field, a synthesized molten Ni-Al alloy flowed into the graphite mold and joined to the cermet. The soundness of the joint interface depended on the volume percentage of TiC phase in the cermet. A lot of defects were formed near the interface between the Ni-TiC cermet and the cast Ni-Al alloy when the volume percentage of TiC was 50% or higher. For this kind of cermet system, using a functionally graded cermet such as Ni-10 vol.%TiC/Ni-25 vol.%TiC/Ni-50 vol.%TiC overcame this difficulty. The four-point bending strength of the joined specimen consisting of the three-layered FGM cermet and cast Ni-29 mol%Al alloy was 1010 MPa which is close to the result for a Ni-29 mol%Al alloy specimen

Scale-up of organic reactions in ball mills: process intensification with regard to energy efficiency and economy of scale.

Science.gov (United States)

Stolle, Achim; Schmidt, Robert; Jacob, Katharina

2014-01-01

The scale-up of the Knoevenagel-condensation between vanillin and barbituric acid carried out in planetary ball mills is investigated from an engineering perspective. Generally, the reaction proceeded in the solid state without intermediate melting and afforded selectively only one product. The reaction has been used as a model to analyze the influence and relationship of different parameters related to operation in planetary ball mills. From the viewpoint of technological parameters the milling ball diameter, dMB, the filling degree with respect to the milling balls' packing, ΦMB,packing, and the filling degree of the substrates with respect to the void volume of the milling balls' packing, ΦGS, have been investigated at different reaction scales. It was found that milling balls with small dMB lead to higher yields within shorter reaction time, treaction, or lower rotation frequency, rpm. Thus, the lower limit is set considering the technology which is available for the separation of the milling balls from the product after the reaction. Regarding ΦMB,packing, results indicate that the optimal value is roughly 50% of the total milling beakers' volume, VB,total, independent of the reaction scale or reaction conditions. Thus, 30% of VB,total are taken by the milling balls. Increase of the initial batch sizes changes ΦGS significantly. However, within the investigated parameter range no negative influence on the yield was observed. Up to 50% of VB,total can be taken over by the substrates in addition to 30% for the total milling ball volume. Scale-up factors of 15 and 11 were realized considering the amount of substrates and the reactor volume, respectively. Beside technological parameters, variables which influence the process itself, treaction and rpm, were investigated also. Variation of those allowed to fine-tune the reaction conditions in order to maximize the yield and minimize the energy intensity.

Nial and Nial-Based Composites Directionally Solidified by a Containerless Zone Process. Ph.D. Thesis

Science.gov (United States)

Joslin, Steven M.

1995-01-01

A containerless electromagnetically levitated zone (CELZ) process has been used to directionally solidify NiAl and NiAl-based composites. The CELZ processing results in single crystal NiAl (HP-NiAl) having higher purity than commercially pure NiAl grown by a modified Bridgman process (CP-NiAl). The mechanical properties, specifically fracture toughness and creep strength, of the HP-NiAl are superior to binary CP-NiAl and are used as a base-line for comparison with the composite materials subsequently studied. Two-phase composite materials (NiAl-based eutectic alloys) show improvement in room temperature fracture toughness and 1200 to 1400 K creep strength over that of binary HP-NiAl. Metallic phase reinforcements produce the greatest improvement in fracture toughness, while intermetallic reinforcement produces the largest improvement in high temperature strength. Three-phase eutectic alloys and composite materials were identified and directionally solidified with the intent to combine the improvements observed in the two-phase alloys into one alloy. The room temperature fracture toughness and high temperature strength (in air) serve as the basis for comparison between all of the alloys. Finally, the composite materials are discussed in terms of dominant fracture mechanism observed by fractography.

Hydroamination reactions of alkynes with ortho-substituted anilines in ball mills: synthesis of benzannulated N-heterocycles by a cascade reaction.

Science.gov (United States)

Weiße, Maik; Zille, Markus; Jacob, Katharina; Schmidt, Robert; Stolle, Achim

2015-04-20

It was demonstrated that ortho-substituted anilines are prone to undergo hydroamination reactions with diethyl acetylenedicarboxylate in a planetary ball mill. A sequential coupling of the intermolecular hydroamination reaction with intramolecular ring closure was utilized for the syntheses of benzooxazines, quinoxalines, and benzothiazines from readily available building blocks, that is, electrophilic alkynes and anilines with OH, NH, or SH groups in the ortho position. For the heterocycle formation, it was shown that several stress conditions were able to initiate the reaction in the solid state. Processing in a ball mill seemed to be advantageous over comminution with mortar and pestle with respect to process control. In the latter case, significant postreaction modification occurred during solid-state analysis. Cryogenic milling proved to have an adverse effect on the molecular transformation of the reagents. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Mechanisms of large strain, high strain rate plastic flow in the explosively driven collapse of Ni-Al laminate cylinders

International Nuclear Information System (INIS)

Olney, K L; Chiu, P H; Nesterenko, V F; Higgins, A; Serge, M; Weihs, T P; Fritz, G; Stover, A; Benson, D J

2014-01-01

Ni-Al laminates have shown promise as reactive materials due to their high energy release through intermetallic reaction. In addition to the traditional ignition methods, the reaction may be initiated in hot spots that can be created during mechanical loading. The explosively driven thick walled cylinder (TWC) technique was performed on two Ni-Al laminates composed of thin foil layers with different mesostructues: concentric and corrugated. These experiments were conducted to examine how these materials accommodate large plastic strain under high strain rates. Finite element simulations of these specimens with mesostuctures digitized from the experimental samples were conducted to provide insight into the mesoscale mechanisms of plastic flow. The dependence of dynamic behaviour on mesostructure may be used to tailor the hot spot formation and therefore the reactivity of the material system.

Microstructure of Reaction Zone Formed During Diffusion Bonding of TiAl with Ni/Al Multilayer

Science.gov (United States)

Simões, Sónia; Viana, Filomena; Koçak, Mustafa; Ramos, A. Sofia; Vieira, M. Teresa; Vieira, Manuel F.

2012-05-01

In this article, the characterization of the interfacial structure of diffusion bonding a TiAl alloy is presented. The joining surfaces were modified by Ni/Al reactive multilayer deposition as an alternative approach to conventional diffusion bonding. TiAl substrates were coated with alternated Ni and Al nanolayers. The nanolayers were deposited by dc magnetron sputtering with 14 nm of period (bilayer thickness). Joining experiments were performed at 900 °C for 30 and 60 min with a pressure of 5 MPa. Cross sections of the joints were prepared for characterization of their interfaces by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), high resolution TEM (HRTEM), energy dispersive x-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD). Several intermetallic compounds form at the interface, assuring the bonding of the TiAl. The interface can be divided into three distinct zones: zone 1 exhibits elongated nanograins, very small equiaxed grains are observed in zone 2, while zone 3 has larger equiaxed grains. EBSD analysis reveals that zone 1 corresponds to the intermetallic Al2NiTi and AlNiTi, and zones 2 and 3 to NiAl.

First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

International Nuclear Information System (INIS)

Ivashchenko, V.I.; Veprek, S.; Turchi, P.E.A.; Shevchenko, V.I.; Leszczynski, J.; Gorb, L.; Hill, F.

2014-01-01

First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN 4 , octahedral AlN 6 , and AlN 5 units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified

Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

International Nuclear Information System (INIS)

Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

2012-01-01

Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

Laboratory Investigations of Ni-Al Coatings Exposed to Conditions Simulating Biomass Firing

DEFF Research Database (Denmark)

Wu, Duoli; Okoro, Sunday Chukwudi; Dahl, Kristian Vinter

2016-01-01

Fireside corrosion is a key problem when using biomass fuels in power plants. A possible solution is to apply corrosion resistant coatings. The present paper studies the corrosion and interdiffusion behaviour of a Ni-Al diffusion coating on austenitic stainless steel (TP347H). Ni-Al coatings were...... prepared by electrolytic deposition of nickel followed by pack aluminizing performed at 650˚C. A uniform and dense Ni-Al coating with an outer layer of Ni2Al3 and an inner Ni layer was formed. Samples were exposed to 560°C for 168h in an atmosphere simulating biomass combustion. This resulted in localized...... corrosion attack. Interdiffusion was studied by isothermal heat treatment in static air at 650˚C or 700˚C for up to 3000h. The Ni2Al3 gradually transformed into NiAl and Ni3Al during the interdiffusion process. Porosity developed at the interface between the Ni-Al coating and the Ni layer and expanded...

In Situ Synthesis of Al-Based MMCs Reinforced with AlN by Mechanical Alloying under NH3 Gas

Directory of Open Access Journals (Sweden)

E. S. Caballero

2018-05-01

Full Text Available Aluminum matrix composites (AMCs reinforced by aluminum nitride were prepared by mechanical alloying followed by a simple press and sintering method. Milling began under vacuum and after a period of between 1 and 4 h, NH3 gas flow (1 cm3/s was incorporated until the total milling time of 5 h was reached. Results show that in addition to the strain hardening taking place during mechanical alloying, NH3 plays an additional role in powder hardening. Thereby, the properties of the sintered compacts are strongly influenced by the amount of N incorporated into the powders during milling and the subsequent formation of AlN during the consolidation process. The obtained AMC reaches tensile strengths as high as 459 MPa and hardness much higher than that of the as-received aluminum compact.

Production of carbon nanotubes using mechanical milling in the presence of an exothermic reaction

International Nuclear Information System (INIS)

Karimi, E.Z.; Zebarjad, S.M.; Khaki, J. Vahdati; Izadi, H.

2010-01-01

Carbon nanotubes (CNTs) have shown promising potential for many applications in field of engineering due to their unusual significant properties. A major challenge for the industrial applications of CNTs is the large-quantity production. In this field, one new method for CNT production is annealing the ball milled graphite powder. The annealing process should be done in high temperature (1200-1400 o C) and needs time more than 6 h. The novel process introduced in this paper is elimination the annealing stage thorough a thermite reaction. The necessity heat for the conversion of milling products to CNTs was generated in the milling chamber by an exothermic reaction. In addition, the reaction products acted as catalysts to the CNT formation process. The adiabatic temperatures of 1809, 2000 and 2325 K were selected according to balancing graphite and thermite mixture (Aluminum + Iron oxide powders) for exothermic reaction. The results of thermo gravimetric analysis (TGA) test proved that CNT formation strongly depends on adiabatic temperature. The results of microscopic evaluation done by transition electron microscope (TEM) showed that at higher adiabatic temperature CNTs could be produced.

Processing and microstructure of melt spun NiAl alloys

Science.gov (United States)

Locci, I. E.; Noebe, R. D.; Moser, J. A.; Lee, D. S.; Nathal, M.

1989-01-01

The influence of various melt spinning parameters and the effect of consolidation on the microstructure of melt spun NiAl and NiAl + W alloys have been examined by optical and electron microscopy techniques. It was found that the addition of 0.5 at. pct W to NiAl results in a fine dispersion of W particles after melt spinning which effectively controls grain growth during annealing treatments or consolidation at temperatures between 1523 and 1723 K. Increased wheel speeds are effective at reducing both the ribbon thickness and grain size, such that proper choice of both composition and casting parameters can produce structures with grain sizes as small as 2 microns. Finally, fabrication of continuous fiber-reinforced composites which used pulverized ribbon as the matrix material was demonstrated.

First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Ivashchenko, V.I., E-mail: ivash@ipms.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Veprek, S., E-mail: stan.veprek@lrz.tum.de [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, CA 94551 (United States); Shevchenko, V.I. [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Leszczynski, J. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); Gorb, L. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); U.S. Army ERDC, Vicksburg, MS 39180 (United States); Hill, F. [U.S. Army ERDC, Vicksburg, MS 39180 (United States)

2014-08-01

First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN{sub 4}, octahedral AlN{sub 6}, and AlN{sub 5} units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified.

Epitaxial growth of AlN on single crystal Mo substrates

International Nuclear Information System (INIS)

Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

2008-01-01

We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

Epitaxial growth of AlN on single crystal Mo substrates

Energy Technology Data Exchange (ETDEWEB)

Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

2008-06-02

We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

Energy Technology Data Exchange (ETDEWEB)

Muramatsu, Y.; Grush, M.; Callcott, T.A. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

1997-04-01

Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

International Nuclear Information System (INIS)

Muramatsu, Y.; Grush, M.; Callcott, T.A.

1997-01-01

Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called open-quotes super diamond,close quotes and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods

High-rate sputter deposition of NiAl on sapphire fibers

Energy Technology Data Exchange (ETDEWEB)

Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

2002-07-01

Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

Energy Technology Data Exchange (ETDEWEB)

Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

2005-05-01

The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electronic structures of the F-terminated AlN nanoribbons

Indian Academy of Sciences (India)

Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the ...

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

Effect of Phosphine Doping and the Surface Metal State of Ni on the Catalytic Performance of Ni/Al2O3 Catalyst

Directory of Open Access Journals (Sweden)

Xiaoru Li

2015-04-01

Full Text Available Ni-based catalysts as replacement for noble metal catalysts are of particular interest in the catalytic conversion of biomass due to their cheap and satisfactory catalytic activity. The Ni/SiO2 catalyst has been studied for the hydrogenolysis of glycerol, and doping with phosphorus (P found to improve the catalytic performance significantly because of the formation of Ni2P alloys. However, in the present work we disclose a different catalytic phenomenon for the P-doped Ni/Al2O3 catalyst. We found that doping with P has a significant effect on the state of the active Ni species, and thus improves the selectivity to 1,2-propanediol (1,2-PDO significantly in the hydrogenolysis of glycerol, although Ni-P alloys were not observed in our catalytic system. The structure and selectivity correlations were determined from the experimental data, combining the results of X-ray diffraction (XRD, X-ray photoelectron spectroscopy (XPS, hydrogen temperature-programmed reduction (H2-TPR and ammonia temperature-programmed desorption (NH3-TPD. The presence of NiO species, formed from P-doped Ni/Al2O3 catalyst, was shown to benefit the formation of 1,2-PDO. This was supported by the results of the Ni/Al2O3 catalyst containing NiO species with incomplete reduction. Furthermore, the role the NiO species played in the reaction and the potential reaction mechanism over the P-doped Ni/Al2O3 catalyst is discussed. The new findings in the present work open a new vision for Ni catalysis and will benefit researchers in designing Ni-based catalysts.

Production of AlN films: ion nitriding versus PVD coating

International Nuclear Information System (INIS)

Figueroa, U.; Salas, O.; Oseguera, J.

2004-01-01

The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

Compatibility of AlN ceramics with molten lithium

Energy Technology Data Exchange (ETDEWEB)

Yoneoka, Toshiaki; Sakurai, Toshiharu; Sato, Toshihiko; Tanaka, Satoru [Tokyo Univ., Department of Quantum Engineering and Systems Science, Tokyo (Japan)

2002-04-01

AlN ceramics were a candidate for electrically insulating materials and facing materials against molten breeder in a nuclear fusion reactor. In the nuclear fusion reactor, interactions of various structural materials with solid and liquid breeder materials as well as coolant materials are important. Therefore, corrosion tests of AlN ceramics with molten lithium were performed. AlN specimens of six kinds, different in sintering additives and manufacturing method, were used. AlN specimens were immersed into molten lithium at 823 K. Duration for the compatibility tests was about 2.8 Ms (32 days). Specimens with sintering additive of Y{sub 2}O{sub 3} by about 5 mass% formed the network structure of oxide in the crystals of AlN. It was considered that the corrosion proceeded by reduction of the oxide network and the penetration of molten lithium through the reduced pass of this network. For specimens without sintering additive, Al{sub 2}O{sub 3} containing by about 1.3% in raw material was converted to fine oxynitride particles on grain boundary or dissolved in AlN crystals. After immersion into lithium, these specimens were found to be sound in shape but reduced in electrical resistivity. These degradation of the two types specimens were considered to be caused by the reduction of oxygen components. On the other hand, a specimen sintered using CaO as sintering additive was finally became appreciably high purity. This specimen showed good compatibility for molten lithium at least up to 823 K. It was concluded that the reduction of oxygen concentration in AlN materials was essential in order to improve the compatibility for molten lithium. (author)

Creep Properties of NiAl-1Hf Single Crystals Re-Investigated

Science.gov (United States)

Whittenberger, J. Daniel; Locci, Ivan E.; Darolia, Ram; Bowman, Randy R.

2000-01-01

NiAl-1Hf single crystals have been shown to be quite strong at 1027 C, with strength levels approaching those of advanced Ni-based superalloys. Initial testing, however, indicated that the properties might not be reproducible. Study of the 1027 C creep behavior of four different NiAl-1Hf single-crystal ingots subjected to several different heat treatments indicated that strength lies in a narrow band. Thus, we concluded that the mechanical properties are reproducible. Recent investigations of the intermetallic NiAl have confirmed that minor alloying additions combined with single-crystal growth technology can produce elevated temperature strength levels approaching those of Ni-based superalloys. For example, General Electric alloy AFN 12 {Ni-48.5(at.%) Al-0.5Hf-1Ti-0.05Ga} has a creep rupture strength equivalent to Rene 80 combined with a approximately 30-percent lower density, a fourfold improvement in thermal conductivity, and the ability to form a self-protective alumina scale in aggressive environments. Although the compositions of strong NiAl single crystals are relatively simple, the microstructures are complex and vary with the heat treatment and with small ingot-toingot variations in the alloy chemistry. In addition, initial testing suggested a strong dependence between microstructure and creep strength. If these observations were true, the ability to utilize NiAl single-crystal rotating components in turbine machinery could be severely limited. To investigate the possible limitations in the creep response of high-strength NiAl single crystals, the NASA Glenn Research Center at Lewis Field initiated an in depth investigation of the effect of heat treatment on the microstructure and subsequent 1027 C creep behavior of [001]-oriented NiAl-1Hf with a nominal chemistry of Ni-47.5Al-1Hf-0.5Si. This alloy was selected since four ingots, grown over a number of years and possessing slightly different compositions, were available for study. Specimens taken from the

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Density of Ni-Al Alloys in Liquid and Solid-Liquid Coexistence State Measured by a Modified Pycnometric Method

Institute of Scientific and Technical Information of China (English)

Liang FANG; Feng XIAO; Zushu LI; Zainan TAO

2004-01-01

The density of Ni-Al alloys in both liquid state and solid-liquid coexistence state was measured with a modified pycnometric method. It was found that the density of NI-Al alloys decreases with increasing temperature and Al concentration in the alloys. The molar volume of liquid Ni-Al binary alloys increases with the increase of temperature and Al concentration. The partial molar volume of Al in NI-Al binary alloy was calculated approximately. The molar volume of liquid NI-Al alloy determined in the present work shows a negative deviation from the ideal linear molar volume.

Mechanical Behavior and Fracture Properties of NiAl Intermetallic Alloy with Different Copper Contents

Directory of Open Access Journals (Sweden)

Tao-Hsing Chen

2016-03-01

Full Text Available The deformation behavior and fracture characteristics of NiAl intermetallic alloy containing 5~7 at% Cu are investigated at room temperature under strain rates ranging from 1 × 10−3 to 5 × 103 s−1. It is shown that the copper contents and strain rate both have a significant effect on the mechanical behavior of the NiAl alloy. Specifically, the flow stress increases with an increasing copper content and strain rate. Moreover, the ductility also improves as the copper content increases. The change in the mechanical response and fracture behavior of the NiAl alloy given a higher copper content is thought to be the result of the precipitation of β-phase (Ni,CuAl and γ'-phase (Ni,Cu3Al in the NiAl matrix.

Ferromagnetism in Cr-doped passivated AlN nanowires

KAUST Repository

Kanoun, Mohammed; Goumri-Said, Souraya; Schwingenschlö gl, Udo

2014-01-01

We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

Magnetic tunnel junctions with AlN and AlNxOy barriers

International Nuclear Information System (INIS)

Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

2001-01-01

Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell.

Science.gov (United States)

Lei, M; Wang, J; Li, J R; Wang, Y G; Tang, H L; Wang, W J

2014-08-11

Replacing precious and nondurable Pt catalysts with cheap materials is a key issue for commercialization of fuel cells. In the case of oxygen reduction reaction (ORR) catalysts for direct methanol fuel cell (DMFC), the methanol tolerance is also an important concern. Here, we develop AlN nanowires with diameters of about 100-150 nm and the length up to 1 mm through crystal growth method. We find it is electrochemically stable in methanol-contained alkaline electrolyte. This novel material exhibits pronounced electrocatalytic activity with exchange current density of about 6.52 × 10(-8) A/cm(2). The single cell assembled with AlN nanowire cathodic electrode achieves a power density of 18.9 mW cm(-2). After being maintained at 100 mA cm(-2) for 48 h, the AlN nanowire-based single cell keeps 92.1% of the initial performance, which is in comparison with 54.5% for that assembled with Pt/C cathode. This discovery reveals a new type of metal nitride ORR catalyst that can be cheaply produced from crystal growth method.

AlN piezoelectric films for sensing and actuation

NARCIS (Netherlands)

Tran, A.T.

2014-01-01

Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

Influence of Al grain boundaries segregations and La-doping on embrittlement of intermetallic NiAl

Energy Technology Data Exchange (ETDEWEB)

Kovalev, Anatoly I., E-mail: a_kovalev@sprg.ru; Wainstein, Dmitry L.; Rashkovskiy, Alexander Yu.

2015-11-01

Highlights: • We investigated Al grain boundaries segregations in ordered pure and La-doped NiAl. • Structural segregation of Al decreases critical strain for brittle cracks nucleation. • La alloying sharply improves plasticity of NiAl intermetallic. • Metallicity of interatomic bonds on grain boundaries increases at La alloying. • We have experimentally measured by EELFS that La atoms are located in Al sublattice. - Abstract: The microscopic nature of intergranular fracture of NiAl was experimentally investigated by the set of electron spectroscopy techniques. The paper demonstrates that embrittlement of NiAl intermetallic compound is caused by ordering of atomic structure that leads to formation of structural aluminum segregations at grain boundaries (GB). Such segregations contain high number of brittle covalent interatomic bonds. The alloying by La increases the ductility of material avoiding Al GB enrichment and disordering GB atomic structure. The influence of La alloying on NiAl mechanical properties was investigated. GB chemical composition, atomic and electronic structure transformations after La doping were investigated by AES, XPS and EELFS techniques. To qualify the interatomic bonds metallicity the Fermi level (E{sub F}) position and electrons density (n{sub eff}) in conduction band were determined in both undoped and doped NiAl. Basing on experimental results the physical model of GB brittleness formation was proposed.

Study of the preparation of Cu-TiC composites by reaction of soluble Ti and ball-milled carbon coating TiC

Science.gov (United States)

Xu, Xuexia; Li, Wenbin; Wang, Yong; Dong, Guozhen; Jing, Shangqian; Wang, Qing; Feng, Yanting; Fan, Xiaoliang; Ding, Haimin

2018-06-01

In this work, Cu-TiC composites have been successfully prepared by reaction of soluble Ti and carbon coating TiC. Firstly, the ball milling of graphite and TiC mixtures is used to obtain the carbon coating TiC which has fine size and improved reaction activity. After adding the ball milled carbon coating TiC into Cu-Ti melts, the soluble Ti will easily react with the carbon coating to form TiC. This process will also improve the wettability between Cu melts and TiC core. As a result, besides the TiC prepared by reaction of soluble Ti and carbon coating, the ball milled TiC will also be brought into the melts. Some of these ball-milled TiC particles will go on being coated by the formed TiC from the reaction of Ti and the coating carbon and left behind in the composites. However, most of TiC core will be further reacted with the excessive Ti and be transformed into the newly formed TiC with different stoichiometry. The results indicate that it is a feasible method to synthesize TiC in Cu melts by reaction of soluble Ti and ball-milled carbon coating TiC.

Mechanical alloying and reactive milling in a high energy planetary mill

International Nuclear Information System (INIS)

Jiang Xianjin; Trunov, Mikhaylo A.; Schoenitz, Mirko; Dave, Rajesh N.; Dreizin, Edward L.

2009-01-01

Powder refinement in a planetary mill (Retsch PM 400-MA) is investigated experimentally and analyzed using discrete element modeling (DEM). Refinement is defined as the average size of the individual components in a composite powder. The specific milling dose, defined as the product of charge ratio and milling time, is used as an experimental parameter tracking the progress of the material refinement. This parameter is determined experimentally for milling of boron and titanium powders, for which the time of initiation of a self-sustained reaction is measured under different milling conditions. It is assumed that the reaction becomes self-sustaining when the same powder refinement is achieved. The DEM calculations established that the milling balls primarily roll along the milling container's perimeter. The inverse of the rate of energy dissipation resulting from this rolling motion is used as the DEM analog of the specific milling dose. The results correlate well with experimental observations.

Constitutional and thermal point defects in B2 NiAl

DEFF Research Database (Denmark)

Korzhavyi, P. A.; Ruban, Andrei; Lozovoi, A. Y.

2000-01-01

The formation energies of point defects and the interaction energies of various defect pairs in NiAl are calculated from first principles within an order N, locally self-consistent Green's-function method in conjunction with multipole electrostatic corrections to the atomic sphere approximation...... distance on their sublattice. The dominant thermal defects in Ni-rich and stoichiometric NiAl are calculated to be triple defects. In Al-rich alloys another type of thermal defect dominates, where two Ni vacancies are replaced by one antisite Al atom. As a result, the vacancy concentration decreases...

Measurement of the neutron activation constants Q0 and k0 for the 27Al(n, γ)28Al reaction at the JSI TRIGA Mark II reactor

International Nuclear Information System (INIS)

Vladimir Radulovic; Andrej Trkov; Radojko Jacimovic; Robert Jeraj

2013-01-01

Measurements of the neutron activation constants Q 0 and k 0 for the 27 Al(n, γ) 28 Al reaction have been performed in two irradiation channels with different spectral characteristics at the JSI TRIGA Mark II reactor. In the determination of Q 0 the fission spectrum contribution to the reaction rates has been corrected for. The final experimental value of the Q 0 factor was found to differ significantly from the adopted value in the k 0 -database. The experimental value of the k 0 factor is in agreement with the recommended value in the k 0 -database. The thermal cross-section and resonance integral for the reaction were found to be in good agreement with the values calculated from the cross-sections from the ENDF/B-VII.1 library. (author)

Enhancement of c-axis texture of AlN films by substrate implantation

International Nuclear Information System (INIS)

Chen, C.H.; Yeh, J.M.; Hwang, J.

2005-01-01

Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

Low cycle fatigue behavior of polycrystalline NiAl at 300 and 1000 K

Science.gov (United States)

Lerch, Bradley A.; Noebe, Ronald D.

1993-01-01

The low cycle fatigue behavior of polycrystalline NiAl was determined at 300 and 1000 K - temperatures below and above the brittle- to-ductile transition temperature (BDTT). Fully reversed, plastic strain-controlled fatigue tests were conducted on two differently fabricated alloy samples: hot isostatically pressed (HIP'ed) prealloyed powder and hot extruded castings. HIP'ed powder (HP) samples were tested only at 1000 K, whereas the more ductile cast-and-extruded (C+E) NiAl samples were tested at both 1000 and 300 K. Plastic strain ranges of 0.06 to 0.2 percent were used. The C+E NiAl cyclically hardened until fracture, reaching stress levels approximately 60 percent greater than the ultimate tensile strength of the alloy. Compared on a strain basis, NiAl had a much longer fatigue life than other B2 ordered compounds in which fracture initiated at processing-related defects. These defects controlled fatigue life at 300 K, with fracture occurring rapidly once a critical stress level was reached. At 1000 K, above the BDTT, both the C+E and HP samples cyclically softened during most of the fatigue tests in air and were insensitive to processing defects. The processing method did not have a major effect on fatigue life; the lives of the HP samples were about a factor of three shorter than the C+E NiAl, but this was attributed to the lower stress response of the C+E material. The C+E NiAl underwent dynamic grain growth, whereas the HP material maintained a constant grain size during testing. In both materials, fatigue life was controlled by intergranular cavitation and creep processes, which led to fatigue crack growth that was primarily intergranular in nature. Final fracture by overload was transgranular in nature. Also, HP samples tested in vacuum had a life three times longer than their counterparts tested in air and, in contrast to those tested in air, hardened continuously over half of the sample life, thereby indicating an environmentally assisted fatigue damage

Potential of AlN nanostructures as hydrogen storage materials.

Science.gov (United States)

Wang, Qian; Sun, Qiang; Jena, Puru; Kawazoe, Yoshiyuki

2009-03-24

The capability of AlN nanostructures (nanocages, nanocones, nanotubes, and nanowires) to store hydrogen has been studied using gradient-corrected density functional theory. In contrast to bulk AlN, which has the wurtzite structure and four-fold coordination, the Al sites in AlN nanostructures are unsaturated and have two- and three-fold coordination. Each Al atom is capable of binding one H(2) molecule in quasi-molecular form, leading to 4.7 wt % hydrogen, irrespective of the topology of the nanostructures. With the exception of AlN nanotubes, energetics does not support the adsorption of additional hydrogen. The binding energies of hydrogen to these unsaturated metal sites lie in the range of 0.1-0.2 eV/H(2) and are ideal for applications under ambient thermodynamic conditions. Furthermore, these materials do not suffer from the clustering problem that often plagues metal-coated carbon nanostructures.

Computer studies of surface structure of NiAl(111)

International Nuclear Information System (INIS)

Takeuchi, Wataru; Yamamura, Yasunori

1994-01-01

The 180 neutral impact-collision ion scattering spectroscopy (NICISS) data have been analyzed using the ACOCT program code based on the binary collision approximation (BCA). The computer simulations are performed for the case of 2 keV He + ions incident along the [ anti 12 anti 1] direction of a NiAl(111) surface. It is found that the experimental results are well reproduced by the ACOCT simulations including the inward relaxation of 40% of the first interlayer spacing on Ni terminated layer at the NiAl(111) surface and including the Moliere approximation of the Thomas-Fermi potential with a reduced Firsov screening length, multiplied by a factor of 0.60. (orig.)

Lattice damage induced by Tb-implanted AlN crystalline films

International Nuclear Information System (INIS)

Lu Fei; Hu Hui; Rizzi, A.

2002-01-01

AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

Steam Reforming of Ethylene Glycol over Ni/Al2O3 Catalysts: Effect of the Preparation Method and Reduction Temperature

International Nuclear Information System (INIS)

Choi, Dong Hyuck; Park, Jung Eun; Park, Eun Duck

2015-01-01

The effect of preparation method on the catalytic activities of the Ni/Al 2 O 3 catalysts on steam reforming of ethylene glycol was investigated. The catalysts were prepared with various preparation methods such as an incipient wetness impregnation, wet impregnation, and coprecipitation method. In the case of coprecipitation method, various precipitants such as KOH, K 2 CO 3 , and NH 4 OH were compared. The prepared catalysts were characterized by using N 2 physisorption, inductively coupled plasma-atomic emission spectroscopy, X-ray diffraction, temperature programmed reduction, pulsed H 2 chemisorption, temperature-programmed oxidation, scanning electron microscopy, and thermogravimetric analysis. Among the catalysts reduced at 773 K, the Ni/Al 2 O 3 catalyst prepared by a coprecipitation with KOH or K 2 CO 3 as precipitants showed the best catalytic performance. The preparation method affected the particle size of Ni, reducibility of nickel oxides, catalytic performance (activity and stability), and types of coke formed during the reaction. The Ni/Al 2 O 3 catalyst prepared by a coprecipitation with KOH showed the increasing catalytic activity with an increase in the reduction temperature from 773 to 1173 K because of an increase in the reduction degree of Ni oxide species even though the particle size of Ni increased with increasing reduction temperature

High temperature oxidation behavior of hafnium modified NiAl bond coat in EB-PVD thermal barrier coating system

Energy Technology Data Exchange (ETDEWEB)

Guo Hongbo; Sun Lidong; Li Hefei [Department of Material Science and Engineering, Beijing University of Aeronautics and Astronautics, No.37 Xueyuan Road, Beijing 100083 (China); Gong Shengkai [Department of Material Science and Engineering, Beijing University of Aeronautics and Astronautics, No.37 Xueyuan Road, Beijing 100083 (China)], E-mail: gongsk@buaa.edu.cn

2008-06-30

NiAl coatings doped with 0.5 at.% and 1.5 at.% Hf were produced by co-evaporation of NiAl and Hf ingots by electron beam physical vapor deposition (EB-PVD), respectively. The addition of 0.5 at.% Hf significantly improved the cyclic oxidation resistance of the NiAl coating. The TGO layer in the 1.5 at.% Hf doped NiAl coating is straight; while that in the 0.5 at.% Hf doped coating became undulated after thermal cycling. The doped NiAl thermal barrier coatings (TBCs) revealed improved thermal cycling lifetimes at 1423 K, compared to the undoped TBC. Failure of the 0.5 at.% Hf doped TBC occurred by cracking at the interface between YSZ topcoat and bond coat, while the 1.5 at.% Hf doped TBC cracked at the interface between bond coat and substrate.

Influence of Al grain boundaries segregations and La-doping on embrittlement of intermetallic NiAl

Science.gov (United States)

Kovalev, Anatoly I.; Wainstein, Dmitry L.; Rashkovskiy, Alexander Yu.

2015-11-01

The microscopic nature of intergranular fracture of NiAl was experimentally investigated by the set of electron spectroscopy techniques. The paper demonstrates that embrittlement of NiAl intermetallic compound is caused by ordering of atomic structure that leads to formation of structural aluminum segregations at grain boundaries (GB). Such segregations contain high number of brittle covalent interatomic bonds. The alloying by La increases the ductility of material avoiding Al GB enrichment and disordering GB atomic structure. The influence of La alloying on NiAl mechanical properties was investigated. GB chemical composition, atomic and electronic structure transformations after La doping were investigated by AES, XPS and EELFS techniques. To qualify the interatomic bonds metallicity the Fermi level (EF) position and electrons density (neff) in conduction band were determined in both undoped and doped NiAl. Basing on experimental results the physical model of GB brittleness formation was proposed.

Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y

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Vítězslav Jarý

2015-10-01

Full Text Available Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K. Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.

Mejora en la producción de recubrimientos de NiAl obtenidos por síntesis autopropagada a alta temperatura mediante energía solar concentrada

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Sierra, C.

2005-12-01

Full Text Available The production of NiAl coatings on steel can be achieved in a quick, cheap and unpolluted way. All this advantages are possible using concentrated solar energy (CSE and selfpropagating high-temperature synthesis (SHS. SHS process allows the production of NiAl in short periods of using of the heat released in the reaction. Initial energy is provided by concentrated solar energy. The aim of this work is to improve the adherence between steel and coating. Two kinds of samples are examined: samples with Ni powder layer, and samples electroplated with nickel.

Se presenta un procedimiento para la obtención de recubrimientos de NiAl sobre acero, de forma rápida, barata y limpia desde el punto de vista medioambiental. Todas estas ventajas son posibles mediante el empleo combinado de la Energía Solar Concentrada (CSE y la Síntesis Autopropagada a Alta Temperatura (SHS aplicada a la producción de intermetálicos. Las reacciones SHS permiten la obtención de NiAl en procesos de corta duración, prácticamente instantáneos, aprovechando la elevada exotermicidad de la propia reacción. El aporte energético inicial se realiza concentrando radiación solar con una lente de Fresnel. El objetivo del trabajo presentado era mejorar la adherencia del recubrimiento de NiAl al acero base; se comparan los resultados de los ensayos entre probetas con una capa intermedia de polvo de níquel y probetas con níquel electrodepositado.

Bonding characteristics in NiAl intermetallics with O impurity: a first-principles computational tensile test

International Nuclear Information System (INIS)

Hu Xuelan; Zhang Ying; Lu Guanghong; Wang Tianmin

2009-01-01

We have performed a first-principles computational tensile test on NiAl intermetallics with O impurity along the [001] crystalline direction on the (110) plane to investigate the tensile strength and the bonding characteristics of the NiAl-O system. We show that the ideal tensile strength is largely reduced due to the presence of O impurity in comparison with pure NiAl. The investigations of the atomic configuration and bond-length evolution show that O prefers to bond with Al, forming an O-Al cluster finally with the break of O-Ni bonds. The O-Ni bonds are demonstrated to be weaker than the O-Al bonds, and the reduced tensile strength originates from such weaker O-Ni bonds. A void-like structure forms after the break of the O-Ni and some Ni-Al bonds. Such a void-like structure can act as the initial nucleation or the propagation path of the crack, and thus produce large effects on the mechanical properties of NiAl.

AlN metal-semiconductor field-effect transistors using Si-ion implantation

Science.gov (United States)

Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

2018-04-01

We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

International Nuclear Information System (INIS)

Jackson, Nathan; Keeney, Lynette; Mathewson, Alan

2013-01-01

The development of a CMOS compatible flexible piezoelectric material is desired for numerous applications and in particular for biomedical MEMS devices. Aluminum nitride (AlN) is the most commonly used CMOS compatible piezoelectric material, which is typically deposited on Si in order to enhance the c-axis (002) crystal orientation which gives AlN its high piezoelectric properties. This paper reports on the successful deposition of AlN on polyimide (PI-2611) material. The AlN deposited has a FWHM (002) value of 5.1° and a piezoelectric d 33 value of 1.12 pm V −1 , and SEM images show high quality columnar grains. The highly crystalline AlN material is due to the semi-crystalline properties of the polyimide film used. Cytotoxicity testing showed the AlN/polyimide material to be non-toxic to 3T3 cells and primary neurons. Surface properties of the AlN/polyimide film were evaluated as they have a significant effect on the adhesion of cells to the film. The results show neurons adhering to the AlN surface. The results of this paper show the characterization of a new flexible-CMOS and biocompatible AlN/polyimide material for MEMS devices with improved crystallinity and piezoelectric properties. (paper)

Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

Energy Technology Data Exchange (ETDEWEB)

Wang, Jin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Key Laboratory of Liquid–Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Chen, ZhiQian, E-mail: chen_zq@swu.edu.cn [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Li, ChunMei; Li, Feng; Nie, ChaoYin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

2014-08-15

The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

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Lin Shu

2016-09-01

Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

27Al MAS NMR spectroscopic identification of reaction intermediates in the carbothermal reduction and nitridation of alumina

International Nuclear Information System (INIS)

Jung, Woo-Sik; Chae, Seen-Ae

2010-01-01

The reaction intermediates in the carbothermal reduction and nitridation (CRN) reaction of γ-Al 2 O 3 were identified by 27 Al magic-angle spinning (MAS) nuclear magnetic resonance (NMR) spectroscopy. This identification ruled out the possibility of a reaction mechanism involving the gaseous reaction intermediates. In the CRN reaction of γ-Al 2 O 3 , AlO 4 units were converted to AlN stepwise via AlN x O 4-x (x = 1, 2, 3) intermediates, while AlO 6 units were more slowly converted to AlN than AlO 4 units and the NMR peaks of partially nitridated AlO 6 units were not detected. The NMR peak intensities of partially nitridated AlO 4 units became weaker with increasing reaction temperature.

Simulation and experimental analysis of nanoindentation and mechanical properties of amorphous NiAl alloys.

Science.gov (United States)

Wang, Chih-Hao; Fang, Te-Hua; Cheng, Po-Chien; Chiang, Chia-Chin; Chao, Kuan-Chi

2015-06-01

This paper used numerical and experimental methods to investigate the mechanical properties of amorphous NiAl alloys during the nanoindentation process. A simulation was performed using the many-body tight-binding potential method. Temperature, plastic deformation, elastic recovery, and hardness were evaluated. The experimental method was based on nanoindentation measurements, allowing a precise prediction of Young's modulus and hardness values for comparison with the simulation results. The indentation simulation results showed a significant increase of NiAl hardness and elastic recovery with increasing Ni content. Furthermore, the results showed that hardness and Young's modulus increase with increasing Ni content. The simulation results are in good agreement with the experimental results. Adhesion test of amorphous NiAl alloys at room temperature is also described in this study.

Adsorption properties of AlN on Si(111) surface: A density functional study

Science.gov (United States)

Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

2018-04-01

In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

Microwave-assisted combustion synthesis of NiAl intermetallics in a single mode applicator: Modeling and optimisation

International Nuclear Information System (INIS)

Poli, G.; Sola, R.; Veronesi, P.

2006-01-01

The microwave-assisted combustion synthesis of NiAl intermetallics in a single mode applicator has been simulated numerically and performed with the aim of achieving the highest yields, energy efficiency and process reproducibility. The electromagnetic field modeling of the microwave system allowed to chose the proper experimental set-up and the materials more suitable for the application, minimising the reflected power and the risks of arcing. In all the experimental conditions tested, conversions of 3-5 g 1:1 atomic ratio Ni and Al powder compacts into NiAl ranged from 98.7% to 100%, requiring from 30 to 180 s with power from 500 to 1500 W. The optimisation procedure allowed to determine and quantify the effects of the main process variables on the ignition time, the NiAl yields and the specific energy consumption, leading to a fast, reproducible and cost-effective process of microwave-assisted combustion synthesis of NiAl intermetallics

Microstructural modification of NiAl layered double hydroxide electrodes by adding graphene nanosheets and their capacitative property

International Nuclear Information System (INIS)

Kim, Yuna; Kim, Seok

2015-01-01

NiAl layered double hydroxide (LDH) composite electrodes containing various contents of graphene nanosheets (GNS) were prepared by a hydrothermal method. The microstructure and morphological properties were examined by FE-SEM, FE-TEM, XRD, and FTIR. Electrochemical analysis was also carried out by cyclic voltammetry, impedance, and cycle life measurement. The as-prepared composite that contained 500 mg of graphene (denoted as NiAl/G-50) achieved the highest specific capacitance of 1147 F/g among the various NiAl LDH/GNS composites. Besides, the NiAl LDH/GNS composite exhibited the lower diffusion resistance, improved rate capability, and good cyclic stability (83% of initial capacitance after 2000 cycles). Considering the morphological data and the improved capacitative properties together, we concluded the synthesized NiAl LDH/GNS composites would be a promising electrode material for supercapacitors

Microstructural modification of NiAl layered double hydroxide electrodes by adding graphene nanosheets and their capacitative property

Energy Technology Data Exchange (ETDEWEB)

Kim, Yuna; Kim, Seok [School of Chemical and Biomolecular Engineering, Pusan National University, Busan (Korea, Republic of)

2015-02-15

NiAl layered double hydroxide (LDH) composite electrodes containing various contents of graphene nanosheets (GNS) were prepared by a hydrothermal method. The microstructure and morphological properties were examined by FE-SEM, FE-TEM, XRD, and FTIR. Electrochemical analysis was also carried out by cyclic voltammetry, impedance, and cycle life measurement. The as-prepared composite that contained 500 mg of graphene (denoted as NiAl/G-50) achieved the highest specific capacitance of 1147 F/g among the various NiAl LDH/GNS composites. Besides, the NiAl LDH/GNS composite exhibited the lower diffusion resistance, improved rate capability, and good cyclic stability (83% of initial capacitance after 2000 cycles). Considering the morphological data and the improved capacitative properties together, we concluded the synthesized NiAl LDH/GNS composites would be a promising electrode material for supercapacitors.

Influence of the milling process on the structure and morphology of ZnAl_2O_4 and catalytic performance in the methyl transesterification reaction of soybean oil

International Nuclear Information System (INIS)

Feitosa, A.C.; Dantas, B.B.; Santana, A.; Costa, A.C.M.F.; Costa, D.B.

2012-01-01

This work aimed to evaluate the effect of milling time over the structure and morphology of ZnAl_2O_4, synthesized by combustion reaction, and study the effect of milled samples over the methyl transesterification reaction of soy bean oil. ZnAl_2O_4 was synthesizing, by means combustion reaction, using a electrical resistance plate. The powder was milled over 15, 30, 45 and 60 minutes and the samples were characterized by X-ray diffraction, scanning electron micrograph, particle size distribution and N_2 adsorption isotherms. Milling process promoted changes over the agglomerate size and textural characteristics of the samples. Catalytic tests were conducted at 160 deg C, with 1% of catalyst, with molar ratio oil:methanol of 1:6 and reaction time of 1 hour. According the results, the sample milled over 30 minutes showed the highest conversion. (author)

AlN nanoparticle-reinforced nanocrystalline Al matrix composites: Fabrication and mechanical properties

International Nuclear Information System (INIS)

Liu, Y.Q.; Cong, H.T.; Wang, W.; Sun, C.H.; Cheng, H.M.

2009-01-01

To improve the specific strength and stiffness of Al-based composites, AlN/Al nanoparticles were in-situ synthesized by arc plasma evaporation of Al in nitrogen atmosphere and consolidated by hot-pressing to fabricate AlN nanoparticle-reinforced nanocrystalline Al composites (0-39 vol.% AlN). Microstructure characterization shows that AlN nanoparticles homogeneously distribute in the matrix of Al nanocrystalline, which forms atomically bonded interfaces of AlN/Al. The hardness and the elastic modulus of the nanocomposite have been improved dramatically, up to 3.48 GPa and 142 GPa, respectively. Such improvement is believed to result from the grain refinement strengthening and the interface strengthening (load transfer) between the Al matrix and AlN nanoparticles

Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

Science.gov (United States)

Florea, R. M.

2017-06-01

Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

Understanding the growth of micro and nano-crystalline AlN by thermal plasma process

Science.gov (United States)

Kanhe, Nilesh S.; Nawale, Ashok B.; Gawade, Rupesh L.; Puranik, Vedavati G.; Bhoraskar, Sudha V.; Das, Asoka K.; Mathe, Vikas L.

2012-01-01

We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 μm. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33% and 67%, respectively.

Modification of NiAl intermetallic coatings processed by PTA with chromium carbides

International Nuclear Information System (INIS)

Yano, Diogo Henrique Sepel; Brunetti, Cristiano; Pintaude, Giuseppe; Oliveira, Ana Sofia Climaco Monteiro d'

2010-01-01

Equipment that operate under high-temperatures can be protected with NiAl intermetallic coatings mainly because of their metallurgical stability. This study as it evaluates the effect of chromium carbide added to Ni-Al intermetallic coatings processed by PTA. Three Ni-Al-Cr23C6 powder mixtures with different carbide fractions (15, 30 and 45 wt%) and another without carbides were deposited by PTA on an AISI 304 stainless steel plate, using two different current intensities (100 and 150A). Coatings were evaluated regarding the presence of welding defects, and resultant microstructures were characterized by X-ray diffraction and scanning electron microscopy. Vickers microhardness and EDS chemical composition were also determined. NiAl and Cr_7C_3 development was confirmed by X-ray diffraction analysis. A combination of NiAl/Cr-Fe-Ni phases was identified. The hardness was strongly related to the formed phases and their amounts. Besides presenting advances toward the development of coatings which can withstand severe operation conditions, the present study shows that PTA hardfacing is able to produce reinforced intermetallic coatings for high-temperature applications. (author)

Synthesis of c-axis oriented AlN thin films on different substrates: A review

International Nuclear Information System (INIS)

Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

2010-01-01

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

Hall effect thruster with an AlN chamber

International Nuclear Information System (INIS)

Barral, S.; Jayet, Y.; Mazouffre, S.; Veron, E.; Echegut, P.; Dudeck, M.

2005-01-01

The plasma discharge of a Hall-effect thruster (SPT) is strongly depending of the plasma-insulated wall interactions. These interactions are mainly related to the energy deposition, potential sheath effect and electron secondary emission rate (e.s.e.). In usual SPT, the annular channel is made of BN-SiO 2 . The SPT100-ML (laboratory model will be tested with an AlN chamber in the French test facility Pivoine in the laboratoire d'Aerothermique (Orleans-France). The different parameters such as discharge current, thrust, plasma oscillations and wall temperature will studied for several operating conditions. The results will be compared with a fluid model developed in IPPT (Warsaw-Poland) taking into account electron emission from the internal and external walls and using previous experimental measurements of e.s.e. for AlN from ONERA (Toulouse-France). The surface state of AlN will be analysed before and after experiments by an Environmental Scanning Electron Microscope and by a Strength Electron Microscope. (author)

Investigation of blue luminescence in Mg doped AlN films

Energy Technology Data Exchange (ETDEWEB)

Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

2015-02-05

Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

Cobalt nanoparticles deposited and embedded in AlN: Magnetic, magneto-optical, and morphological properties

International Nuclear Information System (INIS)

Huttel, Y.; Gomez, H.; Clavero, C.; Cebollada, A.; Armelles, G.; Navarro, E.; Ciria, M.; Benito, L.; Arnaudas, J.I.; Kellock, A.J.

2004-01-01

We present a structural, morphological, magnetic, and magneto-optical study of cobalt nanoparticles deposited on 50 A ring AlN/c-sapphire substrates and embedded in an AlN matrix. The dependence of the properties of Co nanoclusters deposited on AlN with growth temperature and amount of deposited Co are studied and discussed. Also we directly compare the properties of as grown and AlN embedded Co nanoclusters and show that the AlN matrix has a strong impact on their magnetic and magneto-optical properties

Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

Science.gov (United States)

Jackson, Nathan; Mathewson, Alan

2017-04-01

Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

Structure of AlN films deposited by magnetron sputtering method

Directory of Open Access Journals (Sweden)

Nowakowska-Langier K.

2015-09-01

Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

Structure and chemistry of the Si(111)/AlN interface

Science.gov (United States)

Radtke, G.; Couillard, M.; Botton, G. A.; Zhu, D.; Humphreys, C. J.

2012-01-01

We investigate the atomic structure and the chemistry of the Si(111)/AlN interface for an AlN film grown at low-temperature (735 °C) by metalorganic vapor phase epitaxy. A heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. The polarity of the AlN film, along with the projected atomic structure of the crystalline interface, is retrieved using high-angle annular dark field imaging, and a model, based on these experimental observations, is proposed for the bonding at the interface. Electron energy-loss spectrum-imaging, however, also reveals a chemical intermixing, placing our growth conditions at the onset of SiNx interlayer formation.

The decrease in yield strength in NiAl due to hydrostatic pressure

Science.gov (United States)

Margevicius, R. W.; Lewandowski, J. J.; Locci, I.

1992-01-01

The decrease in yield strength in NiAl due to hydrostatic pressure is examined via a comparison of the tensile flow behavior in the low strain regime at 0.1 MPa for NiAl which was cast, extruded, and annealed for 2 hr at 827 C in argon and very slowly cooled to room temperature. Pressurization to 1.4 GPa produces a subsequent reduction at 0.1 MP in proportional limit by 40 percent as well as a 25-percent reduction in the 0.2-percent offset yield strength, while pressurization with lower pressures produces a similar reduction, although smaller in magnitude.

On compensation in Si-doped AlN

Science.gov (United States)

Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

2018-04-01

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

Encaging palladium(0 in layered double hydroxide: A sustainable catalyst for solvent-free and ligand-free Heck reaction in a ball mill

Directory of Open Access Journals (Sweden)

Wei Shi

2017-08-01

Full Text Available In this paper, the synthesis of a cheap, reusable and ligand-free Pd catalyst supported on MgAl layered double hydroxides (Pd/MgAl-LDHs by co-precipitation and reduction methods is described. The catalyst was used in Heck reactions under high-speed ball milling (HSBM conditions at room temperature. The effects of milling-ball size, milling-ball filling degree, reaction time, rotation speed and grinding auxiliary category, which would influence the yields of mechanochemical Heck reactions, were investigated in detail. The characterization results of XRD, ICP–MS and XPS suggest that Pd/MgAl-LDHs have excellent textural properties with zero-valence Pd on its layers. The reaction results indicate that the catalyst could be utilized in HSBM systems to afford a wide range of Heck coupling products in satisfactory yields. Furthermore, this catalyst could be easily recovered and reused for at least five times without significant loss of catalytic activity.

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

Energy Technology Data Exchange (ETDEWEB)

Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

2013-12-16

Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

Electrosynthesized Ni-Al Layered Double Hydroxide-Pt Nanoparticles as an Inorganic Nanocomposite and Potentate Anodic Material for Methanol Electrooxidation in Alkaline Media

Directory of Open Access Journals (Sweden)

Biuck Habibi

2017-04-01

Full Text Available In this study, Ni-Al layered double hydroxide (LDH-Pt nanoparticles (PtNPs as an inorganic nano-composite was electrosynthesized on the glassy carbon electrode (GCE by a facile and fast two-step electrochemical process. Structure and physicochemical properties of PtNPs/Ni-Al LDH/GCE were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectrometry and electrochemical methods. Then, electrocatalytic and stability characterizations of the PtNPs/Ni-Al LDH/GCE for methanol oxidation in alkaline media were investigated in detail by cyclic voltammetry, chronoamperometry, and chronopotentiometry measurements. PtNPs/Ni-Al LDH/GCE exhibited higher electrocatalytic activity than PtNPs/GCE and Ni-Al LDH/GCE. Also, the resulted chronoam-perograms indicated that the PtNPs/Ni-Al LDH/GCE has a better stability. Copyright © 2017 BCREC GROUP. All rights reserved Received: 30th March 2016; Revised: 29th July 2016; Accepted: 9th September 2016 How to Cite: Habibi, B., Ghaderi, S. (2017. Electro Synthesized Ni-Al Layered Double Hydroxide-Pt Nanoparticles as an Inorganic Nanocomposite and Potentate Anodic Material for Methanol Electro-Oxidation in Alkaline Media. Bulletin of Chemical Reaction Engineering & Catalysis, 12(1: 1-13 (doi:10.9767/bcrec.12.1.460.1-13 Permalink/DOI: http://dx.doi.org/10.9767/bcrec.12.1.460.1-13

Effects of Mn partitioning on nanoscale precipitation and mechanical properties of ferritic steels strengthened by NiAl nanoparticles

International Nuclear Information System (INIS)

Jiao, Z.B.; Luan, J.H.; Miller, M.K.; Yu, C.Y.; Liu, C.T.

2015-01-01

The critical role of Mn partitioning in the formation of ordered NiAl nanoparticles in ferritic steels has been examined through a combination of atom probe tomography (APT) and thermodynamic and first-principles calculations. Our APT study reveals that Mn partitions to the NiAl nanoparticles, and dramatically increases the particle number density by more than an order of magnitude, leading to a threefold enhancement in strengthening. Atomistic structural analyses reveal that Mn is energetically favored to partition to the NiAl nanoparticles by preferentially occupying the Al sublattice, which not only increases the driving force, but also reduces the strain energy for nucleation, thereby significantly decreasing the critical energy for formation of the NiAl nanoparticles in ferritic steels. In addition, the effects of Mn on the precipitation strengthening mechanisms were quantitatively evaluated in terms of chemical strengthening, coherency strengthening, modulus strengthening and order strengthening

A novel fabrication technology of in situ TiB2/6063Al composites: High energy ball milling and melt in situ reaction

International Nuclear Information System (INIS)

Zhang, S.-L.; Yang, J.; Zhang, B.-R.; Zhao, Y.-T.; Chen, G.; Shi, X.-X.; Liang, Z.-P.

2015-01-01

Highlights: • This paper presents a novel technology to fabricate the TiB 2 /6063Al composites. • The novel technology decreases in situ reaction temperature and shortens the time. • The reaction mechanism of in situ reaction at the low temperature is discussed. • Effect of ball milling time and in situ reaction time on the composites is studied. - Abstract: TiB 2 /6063Al matrix composites are fabricated from Al–TiO 2 –B 2 O 3 system by the technology combining high energy ball milling with melt in situ reaction. The microstructure and tensile properties of the composites are investigated by XRD, SEM, EDS, TEM and electronic tensile testing. The results indicate that high energy ball milling technology decreases the in situ reaction temperature and shortens the reaction time for Al–TiO 2 –B 2 O 3 system in contrast with the conventional melt in situ synthesis. The morphology of in situ TiB 2 particles is exhibited in irregular shape or nearly circular shape, and the average size of the particles is less than 700 nm, thereinto the minimum size is approximately 200 nm. In addition, the morphology and size of the reinforced particles are affected by the time of ball milling and in situ reaction. TEM images indicate that the interface between 6063Al matrix and TiB 2 particles is clear and no interfacial outgrowth is observed. Tensile testing results show that the as-cast TiB 2 /6063Al composites exhibit a much higher strength, reaching 191 MPa, which is 1.23 times as high as the as-cast 6063Al matrix. Besides, the tensile fracture surface of the composites displays the dimple-fracture character

Microstructure and mechanical properties of a single crystal NiAl alloy with Zr or Hf rich G-phase precipitates

Science.gov (United States)

Locci, I. E.; Noebe, R. D.; Bowman, R. R.; Miner, R. V.; Nathal, M. V.; Darolia, R.

1991-01-01

The possibility of producing NiAl reinforced with the G-phase (Ni16X6Si7), where X is Zr or Hf, has been investigated. The microstructure of these NiAl alloys have been characterized in the as-cast and annealed conditions. The G-phases are present as fine cuboidal precipitates (10 to 40 nm) and have lattice parameters almost four times that of NiAl. They are coherent with the matrix and fairly resistant to coarsening during annealing heat treatments. Segregation and nonuniform precipitate distribution observed in as-cast materials were eliminated by homogenization at temperatures near 1600 K. Slow cooling from these temperatures resulted in large plate shaped precipitates, denuded zones, and a loss of coherency in some of the large particles. Faster cooling produced a homogeneous fine distribution of cuboidal G-phase particles in the matrix. Preliminary mechanical properties for the Zr-doped alloy are presented and compared to binary single crystal NiAl. The presence of these precipitates appears to have an important strengthening effect at temperatures not less than 1000 K compared to binary NiAl single crystals.

Microstructure and mechanical properties of a single crystal NiAl alloy with Zr or Hf rich G-phase precipitates

International Nuclear Information System (INIS)

Locci, I.E.; Noebe, R.D.; Bowman, R.R.; Miner, R.V.; Nathal, M.V.

1991-01-01

In this paper the possibility of producing NiAl reinforced with the G-phase (Ni 16 X 6 Si 7 ), where X is Zr or Hf, has been investigated. The microstructures of these NiAl alloys have been characterized in the as-cast and annealed conditions. The G-phases are present as fine cuboidal precipitates (10 to 40 nm) and have lattice parameters almost four times that of NiAl. They are coherent with the matrix and fairly resistant to coarsening during annealing heat treatments. Segregation and non-uniform precipitate distribution observed in as-cast materials were eliminated by homogenization at temperatures near 1600 K. Slow cooling from these temperatures resulted in large plate shaped precipitates, denuded zones, and a loss of coherency in some of the large particles. Faster cooling produced a homogeneous fine distribution of cuboidal G-phase particles (≤10 nm) in the matrix. Preliminary mechanical properties for the Zr-doped alloy are presented and compared to binary single crystal NiAl. The presence of these precipitates appears to have an important strengthening effect at temperatures ≥1000 K compared to binary NiAl single crystals

Effects of Ni vacancy, Ni antisite, Cr and Pt on the third-order elastic constants and mechanical properties of NiAl

KAUST Repository

Wu, Shaohua; Wu, Xiaozhi; Wang, Rui; Liu, Qing; Gan, Liyong

2014-01-01

Effects of Ni vacancy, Ni antisite in Al sublattice, Cr in Al sublattice, Pt in Ni sublattice on the second-order elastic constants (SOECs) and third-order elastic constants (TOECs) of the B2 NiAl have been investigated using the first-principles methods. Lattice constant and the SOECs of NiAl are in good agreement with the previous results. The brittle/ductile transition map based on Pugh ratio G/B and Cauchy pressure Pc shows that Ni antisite, Cr, Pt and pressure can improve the ductility of NiAl, respectively. Ni vacancy and lower pressure can enhance the Vickers hardness Hv of NiAl. The density of states (DOS) and the charge density difference are also used to analysis the effects of vacancy, Ni antisite, Cr and Pt on the mechanical properties of NiAl, and the results are in consistent with the transition map. © 2014 Elsevier Ltd. All rights reserved.

Effects of Ni vacancy, Ni antisite, Cr and Pt on the third-order elastic constants and mechanical properties of NiAl

KAUST Repository

Wu, Shaohua

2014-12-01

Effects of Ni vacancy, Ni antisite in Al sublattice, Cr in Al sublattice, Pt in Ni sublattice on the second-order elastic constants (SOECs) and third-order elastic constants (TOECs) of the B2 NiAl have been investigated using the first-principles methods. Lattice constant and the SOECs of NiAl are in good agreement with the previous results. The brittle/ductile transition map based on Pugh ratio G/B and Cauchy pressure Pc shows that Ni antisite, Cr, Pt and pressure can improve the ductility of NiAl, respectively. Ni vacancy and lower pressure can enhance the Vickers hardness Hv of NiAl. The density of states (DOS) and the charge density difference are also used to analysis the effects of vacancy, Ni antisite, Cr and Pt on the mechanical properties of NiAl, and the results are in consistent with the transition map. © 2014 Elsevier Ltd. All rights reserved.

Advances in processing of NiAl intermetallic alloys and composites for high temperature aerospace applications

Science.gov (United States)

Bochenek, Kamil; Basista, Michal

2015-11-01

Over the last few decades intermetallic compounds such as NiAl have been considered as potential high temperature structural materials for aerospace industry. A large number of investigations have been reported describing complex fabrication routes, introducing various reinforcing/alloying elements along with theoretical analyses. These research works were mainly focused on the overcoming of main disadvantage of nickel aluminides that still restricts their application range, i.e. brittleness at room temperature. In this paper we present an overview of research on NiAl processing and indicate methods that are promising in solving the low fracture toughness issue at room temperature. Other material properties relevant for high temperature applications are also addressed. The analysis is primarily done from the perspective of NiAl application in aero engines in temperature regimes from room up to the operating temperature (over 1150 °C) of turbine blades.

PRECIPITATION HARDENING IN B2-ORDERED NiAl BY Ni2AlTiCOMPOUND

Institute of Scientific and Technical Information of China (English)

W.H. Tian; K. Ohishi; M. Nemoto

2001-01-01

Microstructural variations and correlated hardness changes in B2-ordered NiAl containing fine precipitation of Ni2AlTi have been investigated by means of transmission electron microscopy (TEM) and hardness tests. The amount of age hardening is not large as compared to the large microstructural variations during aging. TEM observations have revealed that the L21-type Ni2AlTi precipitates keep a lattice coherency with the NiAl matrix at the beginning of aging. By longer periods of aging Ni2AlTi precipitates lose their coherency and change their morphology to the globular ones surrounded by misfit dislocations. The temperature dependence of the yield strength of precipitate-containing B2-ordered NiAl was investigated by compression tests over the temperature range of 873-1273K. The fine precipitation of Ni2AlTi was found to enhance greatly the yield strength and the high-temperature strength is comparison with that of superalloy Mar-M200.``

Stability of the composites: NiAl - cellular high-melting point metal

International Nuclear Information System (INIS)

Belomyttsev, M.Yu.; Kozlov, D.A.

2006-01-01

For sintered composite materials (CM) NiAl-W and NiAl-W-Mo the structure and mechanical properties are studied. A comparative analysis of the effect of hot deformation by compression at 1000-1300 Deg C on the integrity of microsamples themselves and tungsten shells of NiAl granules in CM with a cellular structure is accomplished. Local chemical composition of a NiAl/refractory metal interface in CM with cellular structure and free of it is determined. A CM structural state effect on compression yield strength at 1000 Deg C is estimated. The treatment is proposed which permits approaching cellular structured CM oxidation resistance at 1000-1100 Deg C to the level of heat stability of unalloyed NiAl or its alloy with Hf [ru

A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

International Nuclear Information System (INIS)

Yuan, Yang; Yong, Gao; Peng-Liang, Gong

2008-01-01

A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

2016-04-18

The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Oxidation behaviour of a Ti2AlN MAX-phase coating

International Nuclear Information System (INIS)

Wang Qimin; Kim, Kwangho; Garkas, W; Renteria, A Flores; Leyens, C; Sun Chao

2011-01-01

In this paper, we reported the oxidation behaviour of Ti 2 AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti 2 AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti 2 AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

Science.gov (United States)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Microstructure and texture development during high-strain torsion of NiAl

Energy Technology Data Exchange (ETDEWEB)

Kloeden, B.

2006-07-01

In this study polycrystalline NiAl has been subjected to torsion deformation. The deformation, microstructure and texture development subject to the shear strain are studied by different techniques (Electron Back-Scatter and High Energy Synchrotron Radiation). Beside the development of microstructure and texture with shear strain, the effect of an initial texture as well as the deformation temperature on the development of texture and microstructure constitute an important part of this study. Therefore, samples with three different initial textures were deformed in the temperature range T=700 K-1300 K. The shear stress-shear strain curves are characterized by a peak at low strains, which is followed by softening and a steady state at high strains. Grain refinement takes place for all samples and the average grain size decreases with temperature. For temperatures T>1000 K, discontinuous dynamic recrystallization occurs, by which new grains form by nucleation and subsequent growth. The texture is characterized by two components, {l_brace}100{r_brace}<100> (cube,C) and {l_brace}110{r_brace}<100> (Goss,G). Torsional creep of NiAl is characterized by a stress exponent, which depends on temperature and an activation energy, which is stress dependent. The Swift effect, due to which samples change their axial dimension during torsion without applied axial stress, is observed for NiAl. (orig.)

Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates

International Nuclear Information System (INIS)

Wüstefeld, Christina; Rafaja, David; Motylenko, Mykhaylo; Ullrich, Christiane; Drehmann, Rico; Grund, Thomas; Lampke, Thomas; Wielage, Bernhard

2017-01-01

Cold gas sprayed Al coatings deposited onto wurtzitic AlN substrates show excellent adhesion. As a possible adhesion mechanism, the local heteroepitaxy between Al and AlN was considered and verified experimentally in Al coatings, which were deposited using magnetron sputtering or cold gas spraying on single-crystalline and polycrystalline AlN substrates. Analysis of the local orientation relationships at the Al/AlN interfaces revealed that preferentially such lattice planes of Al align parallel with the upright lattice planes of AlN, which possess similar interplanar distances. The matching lattice planes in the Al coatings grew as continuations of the lattice planes in the AlN substrates. In all samples under study, the parallel alignment of the lattice planes {220}_A_l and {110}_A_l_N was found. Additional orientation relationships between Al and AlN arose if parallel lattice planes with similar interplanar spacing could be found in both counterparts via rotation of the lattice planes {220}_A_l around their normal direction. Still, the oriented growth of Al on AlN is only possible if Al atoms in the deposited coatings are mobile enough to rearrange along the AlN surface. Whereas the mobility of Al atoms in a magnetron sputtering process is expected to be sufficiently high, the intrinsic mobility of Al atoms in the cold gas sprayed particles is anticipated to be low. However, the auxiliary microstructure analyses have shown that local recrystallization and partial melting are two phenomena, which can facilitate the rearrangement of Al atoms within the cold gas sprayed coating.

A novel fabrication technology of in situ TiB{sub 2}/6063Al composites: High energy ball milling and melt in situ reaction

Energy Technology Data Exchange (ETDEWEB)

Zhang, S.-L.; Yang, J. [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013 (China); Zhang, B.-R. [School of Mechanical Engineering, Qilu University of Technology, Jinan, Shandong 250022 (China); Zhao, Y.-T., E-mail: 278075525@qq.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013 (China); Chen, G.; Shi, X.-X.; Liang, Z.-P. [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013 (China)

2015-08-05

Highlights: • This paper presents a novel technology to fabricate the TiB{sub 2}/6063Al composites. • The novel technology decreases in situ reaction temperature and shortens the time. • The reaction mechanism of in situ reaction at the low temperature is discussed. • Effect of ball milling time and in situ reaction time on the composites is studied. - Abstract: TiB{sub 2}/6063Al matrix composites are fabricated from Al–TiO{sub 2}–B{sub 2}O{sub 3} system by the technology combining high energy ball milling with melt in situ reaction. The microstructure and tensile properties of the composites are investigated by XRD, SEM, EDS, TEM and electronic tensile testing. The results indicate that high energy ball milling technology decreases the in situ reaction temperature and shortens the reaction time for Al–TiO{sub 2}–B{sub 2}O{sub 3} system in contrast with the conventional melt in situ synthesis. The morphology of in situ TiB{sub 2} particles is exhibited in irregular shape or nearly circular shape, and the average size of the particles is less than 700 nm, thereinto the minimum size is approximately 200 nm. In addition, the morphology and size of the reinforced particles are affected by the time of ball milling and in situ reaction. TEM images indicate that the interface between 6063Al matrix and TiB{sub 2} particles is clear and no interfacial outgrowth is observed. Tensile testing results show that the as-cast TiB{sub 2}/6063Al composites exhibit a much higher strength, reaching 191 MPa, which is 1.23 times as high as the as-cast 6063Al matrix. Besides, the tensile fracture surface of the composites displays the dimple-fracture character.

Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

International Nuclear Information System (INIS)

Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

2013-01-01

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

Electro-acoustic sensors based on AlN thin film: possibilities and limitations

Science.gov (United States)

Wingqvist, Gunilla

2011-06-01

The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

The Influence of oxide additives on Ni/Al2O3 catalysts in low temperature methane steam reforming

International Nuclear Information System (INIS)

Lazar, Mihaela; Dan, Monica; Mihet, Maria; Almasan, Valer

2009-01-01

Hydrogen is industrially produced by methane steam reforming. The process is catalytic and the usual catalyst is based on Ni as the active element. The main problem of this process is its inefficiency. It requires high temperatures at which Ni also favors the formation of graphite, which deactivates the catalysts. Ni has the advantage of being much cheaper than noble metal catalysts, so many researches are done in order to improve the properties of supported Ni catalysts and to decrease the temperature at which the process is energetically efficient. In order to obtain catalysts with high activity and stability, it is essential to maintain the dispersion of the active phase (Ni particles) and the stability of the support. Both properties can be improved by addition of a second oxide to the support. In this paper we present the results obtained in preparation and characterization of Ni/Al 2 O 3 catalysts modified by addition of CeO 2 and La 2 O 3 to alumina support. The following catalysts were prepared by impregnation method: Ni/Al 2 O 3 , Ni/CeO 2 -Al 2 O 3 and Ni/La 2 O 3 -Al 2 O 3 (10 wt.% Ni and 6 wt.% additional oxide). The catalytic surface was characterized by N 2 adsorption - desorption isotherms. The hydrogen - surface bond was characterized by Thermo-Programmed-Desorption (TPD) method. All catalysts were tested in steam reforming reaction of methane in the range of 600 - 700 deg. C, at atmospheric pressure working with CH 4 :H 2 O ratio of 1:3. The modified catalysts showed a better catalytic activity and selectivity for H 2 and CO 2 formation, at lower temperatures than the simple Ni/Al 2 O 3 catalyst. (authors)

Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

Directory of Open Access Journals (Sweden)

Qisong Li

2016-02-01

Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

An AlN cantilever for a wake-up switch triggered by air pressure change

International Nuclear Information System (INIS)

Kaiho, Y; Itoh, T; Maeda, R; Takahashi, H; Matsumoto, K; Shimoyama, I; Tomimatsu, Y; Kobayashi, T

2013-01-01

This research reports an AlN cantilever with an air chamber for a wake-up switch triggered by air pressure change. The proposed sensor is designed to fulfil both high sensitivity and low power consumption. By combining an air chamber to the one side of the AlN cantilever surface, the barometric pressure change generates a piezoelectric voltage. Thus, a wake-up switch triggered by air pressure change can be achieved using an AlN cantilever. The size of the fabricated AlN cantilever was 2000 μm × 1000 μm × 2 μm. The sensitivity to static differential pressure was 11.5 mV/Pa at the range of −20 Pa to 20 Pa. We evaluated the response of the sensor, which was composed of the AlN cantilever and the chamber of 60 ml in volume, when air pressure change was applied. The output voltage increased with increasing the applied air pressure change. It was observed that the maximum output voltage of 50 mV was generated when the air pressure change was 13 Pa

Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

International Nuclear Information System (INIS)

Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

2014-01-01

AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

Directory of Open Access Journals (Sweden)

Marsetio Noorprajuda

2018-04-01

Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Science.gov (United States)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

Energy Technology Data Exchange (ETDEWEB)

El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

2015-11-15

Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

SAP-like ultrafine-grained Al composites dispersion strengthened with nanometric AlN

International Nuclear Information System (INIS)

Balog, M.; Krizik, P.; Yan, M.; Simancik, F.; Schaffer, G.B.; Qian, M.

2013-01-01

This paper reports the development of novel Sinter-Aluminum-Pulver (SAP)-like Al–AlN nanocomposites via replacing the native Al 2 O 3 thin films on fine Al powder with a large volume fraction of in situ formed nanometric AlN dispersoids. Fine gas-atomized Al powder (d 50 =1.3 µm) compacts were first partially nitrided at 590 °C in flowing nitrogen, controlled by a small addition of Sn (0.3–0.4 wt%), and subsequently consolidated by hot direct extrusion. The resulting Al–AlN composites consisted of submicrometric Al grains reinforced with nanometric AlN dispersoids together with some nanometric Al 2 O 3 dispersoids. An Al–13 vol% AlN nanocomposite fabricated this way achieved exceptional ultimate tensile strength of 227 MPa, yield strength of 195 MPa and Young's modulus of 66 GPa at 300 °C, superior to typical SAP materials and coarse grained Al–AlN composites. In addition, the Al–13 vol% AlN nanocomposite exhibited good thermal stability up to 500 °C. The strengthening mechanism is discussed

Oxidation behaviour of a Ti{sub 2}AlN MAX-phase coating

Energy Technology Data Exchange (ETDEWEB)

Wang Qimin; Kim, Kwangho [National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan 609-735 (Korea, Republic of); Garkas, W; Renteria, A Flores [Chair of Physical Metallurgy and Materials Technology, Technical University of Brandenburg at Cottbus, 03046 Cottbus (Germany); Leyens, C [Institute of Materials Science, Technical University of Dresden, Helmholtzstrasse 7, 01069 Dresden (Germany); Sun Chao, E-mail: qmwang@pusan.ac.kr, E-mail: kwhokim@pusan.ac.kr [Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2011-10-29

In this paper, we reported the oxidation behaviour of Ti{sub 2}AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti{sub 2}AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti{sub 2}AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

Synthesis of H/Bentonite and Ni/Al2O3-bentonite and its application to produce biogasoline from nyamplung seed (Calophyllum inophillum Linn) oil by catalytic hydrocracking

Science.gov (United States)

Marini, A. T.; Wijaya, K.; Sasongko, N. A.

2018-03-01

Hydrocracking process of Nyamplung (Calophyllum inophillum Linn) seed oil to produce biogasoline using H/bentonite and Ni/Al2O3-bentonite that pillared by Al2O3 as catalyst had been conducted. Bentonite was activated by acidification using HF 1% and H2SO4 0.5 M. Ni metal was impregnated into bentonite with two steps reaction; therewas intercalation with Al2O3kegging ion and Ni metal impregnation using NiCl2 metal salt. Catalysts were characterized by infrared spectrophotometer (FTIR), X-ray diffraction (XRD), X-ray fluorescence (XRF), BET, TEM and ammonia adsorption. Hydrocracking reaction was variated by Ni/Al2O3-bentonite and H/bentonite with ratio catalyst/oil 1:100. Biocrude was prepared by extraction by using ethanol 96%. Hydrocracking oil products were further analyzed by GC-MS. The results show that the acidity of bentonite by activation using HF 1% and H2SO4 0.5 M has been increased from 62.58 to 64.62 mmol/g. Impregnation process also increased the acidity of bentonite from 62.58 to 64.89 mmol/g. Activation using HF 1% and H2SO4 0.5 M, intercalation by Al2O3 and impregnation by Ni metal were increasing the crystallinity, surface area, total volume pore and average pore size of bentonite. These techniques were also causeddealumination of bentonite. The hydrocracking process successfully synthesized hydrocarbons with a number of carbon chain between C5-C20 which include bio-gasoline group compounds. Moreover, catalytic processes by H/bentonite and Ni/Al2O3-bentonite also successfully produced 39.83% and 60.37% of biogasoline yields, respectively.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

International Nuclear Information System (INIS)

Lin, Jianliang; Chistyakov, Roman

2017-01-01

Highlights: • Highly orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm"−"2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm"−"2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm"−"2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lin, Jianliang, E-mail: Jianliang.lin@swri.org [Southwest Research Institute, San Antonio, TX 78238 (United States); Chistyakov, Roman [Zpulser LLC, Mansfield, MA 02048 (United States)

2017-02-28

Highlights: • Highly <0001> orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the <0001> texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm{sup −2}) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm{sup −2} improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm{sup −2} showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

Enhanced field emission from Si doped nanocrystalline AlN thin films

International Nuclear Information System (INIS)

Thapa, R.; Saha, B.; Chattopadhyay, K.K.

2009-01-01

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

KAUST Repository

Sun, Haiding

2017-10-16

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Molecular dynamics simulations of the melting curve of NiAl alloy under pressure

International Nuclear Information System (INIS)

Zhang, Wenjin; Peng, Yufeng; Liu, Zhongli

2014-01-01

The melting curve of B2-NiAl alloy under pressure has been investigated using molecular dynamics technique and the embedded atom method (EAM) potential. The melting temperatures were determined with two approaches, the one-phase and the two-phase methods. The first one simulates a homogeneous melting, while the second one involves a heterogeneous melting of materials. Both approaches reduce the superheating effectively and their results are close to each other at the applied pressures. By fitting the well-known Simon equation to our melting data, we yielded the melting curves for NiAl: 1783(1 + P/9.801) 0.298 (one-phase approach), 1850(1 + P/12.806) 0.357 (two-phase approach). The good agreement of the resulting equation of states and the zero-pressure melting point (calc., 1850 ± 25 K, exp., 1911 K) with experiment proved the correctness of these results. These melting data complemented the absence of experimental high-pressure melting of NiAl. To check the transferability of this EAM potential, we have also predicted the melting curves of pure nickel and pure aluminum. Results show the calculated melting point of Nickel agrees well with experiment at zero pressure, while the melting point of aluminum is slightly higher than experiment

New insight into electrochemical-induced synthesis of NiAl2O4/Al2O3: Synergistic effect of surface hydroxyl groups and magnetism for enhanced adsorptivity of Pd(II)

International Nuclear Information System (INIS)

Salleh, N.F.M.; Jalil, A.A.; Triwahyono, S.; Efendi, J.; Mukti, R.R.; Hameed, B.H.

2015-01-01

Graphical abstract: - Highlights: • The introduction of Ni to γ-Al 2 O 3 by electrolysis formed NiAl 2 O 4 spinels and NiO. • Physical mixed of NiO with γ-Al 2 O 3 only produced agglomerated NiO-Ni 0 . • Ni/Al 2 O 3 -E has remarkably higher degree of magnetism than Ni/Al 2 O 3 -PM. • Ni/Al 2 O 3 -E adsorbed Pd 2+ ions more effectively (q m = 40.3 mg/g) than Ni/Al 2 O 3 -PM. • Pd 2+ ions were adsorbed to both samples via magnetic attraction and ion exchange. - Abstract: A new promising adsorbent, Ni supported on γ-Al 2 O 3 was prepared in a simple electrolysis system (Ni/Al 2 O 3 -E) in minutes and was compared with the sample prepared by a physical mixing method (Ni/Al 2 O 3 -PM). The adsorbents were characterized by XRD, TEM, FTIR, 27 Al MAS NMR, XPS, and VSM. The results showed that besides NiO nanoparticles, a NiAl 2 O 4 spinel was also formed in Ni/Al 2 O 3 -E during the electrolysis via the dealumination and isomorphous substitution of Ni 2+ ions. In contrast, only agglomerated NiO was found in the Ni/Al 2 O 3 -PM. Adsorption test on removal of Pd 2+ ions from aqueous solution showed that the Pd 2+ ions were exchanged with the hydrogen atoms of the surface–OH groups of both adsorbents. Significantly, the Ni/Al 2 O 3 -E demonstrated a higher adsorption towards Pd 2+ ions than Ni/Al 2 O 3 -PM due to its remarkably higher degree of magnetism, which came from the NiAl 2 O 4 . The use of 0.1 g L −1 Ni/Al 2 O 3 -E gave the maximum monolayer adsorption capacity (q m ) of 40.3 mg g −1 at 303 K and pH 5. The Ni/Al 2 O 3 -E showed high potential for simultaneous removal of various noble and transition metal ions and could be also used repetitively without affecting the high adsorptivity for Pd 2+ ions. This work may provide promising adsorbents for recovery of various metals as well as other materials for such related applications

A work function study of ultra-thin alumina formation on NiAl(1 1 0) surface

International Nuclear Information System (INIS)

Song, Weijie; Yoshitake, Michiko

2005-01-01

We have investigated the oxidation of NiAl(1 1 0) surface at 1020 and 670 K using ultra-violet photoelectron spectroscopy, Kelvin probe, X-ray photoelectron spectroscopy and low-energy electron diffraction. The work function change during oxidation was monitored in situ as a function of oxygen exposure. It was observed that the work function decreased by 0.6 eV after 7.9 A of well-ordered Al 2 O 3 formation on NiAl(1 1 0) at 1020 K. The formation of the interfacial dipole layer was the main factor that determined the work function and XPS binding energy shifts of Al 2 O 3 energy levels. The work function decreased by 0.8 eV after 5.1 A of amorphous Al 2 O 3 formation at 670 K. The oxide layer structure was one of Key factors that determined the work function of the Al 2 O 3 /NiAl(1 1 0) system

DFT study on the adsorption behavior and electronic response of AlN nanotube and nanocage toward toxic halothane gas

Science.gov (United States)

Mohammadi, R.; Hosseinian, A.; Khosroshahi, E. Saedi; Edjlali, L.; Vessally, E.

2018-04-01

We have investigated the adsorption of a halothane molecule on the AlN nanotube, and nanocage using density functional theory calculations. We predicted that the halothane molecule tends to be physically adsorbed on the surface of AlN nanotube with adsorption energy (Ead) of -4.2 kcal/mol. The electronic properties of AlN nanotube are not affected by the halothane, and it is not a sensor. But the AlN nanocage is more reactive than the AlN nanotube because of its higher curvature. The halothane tends to be adsorbed on a hexagonal ring, an Alsbnd N bond, and a tetragonal ring of the AlN nanocage. The adsorption ability order is as follows: tetragonal ring (Ead = -14.7 kcal/mol) > Alsbnd N bond (Ead = -12.3 kcal/mol) > hexagonal ring (Ead = -10.1 kcal/mol). When a halothane molecule is adsorbed on the AlN nanocage, its electrical conductivity is increased, demonstrating that it can yield an electronic signal at the presence of this molecule, and can be employed in chemical sensors. The AlN nanocage benefits from a short recovery time of about 58 ms at room temperature.

Contribution to the study of the oxidation reaction of the carbon oxide in contact with catalysts issued from the decomposition of nickel hydro-aluminates at various temperatures

International Nuclear Information System (INIS)

Samaane, Mikhail

1966-01-01

Addressing the study of the oxidation reaction of carbon oxide which produces carbon dioxide, this research thesis reports the study of this reaction in presence of catalysts (2NiO + Al 2 O 3 , NiAl 2 O 4 and NiO + NiAl 2 O 4 ) issued from the decomposition of nickel hydro-aluminates at different temperatures. The first part describes experimental techniques and the nature of materials used in this study. The second part reports the study of the catalytic activity of the 2NiO+Al 2 O 3 catalyst during the oxidation of CO. Preliminary studies are also reported: structure and texture of nickel hydro-aluminate which is the raw material used to produce catalysts, activation of this compound to develop the catalytic activity in CO oxidation, chemisorption of CO, O 2 and CO 2 on the 2NiO+Al 2 O 3 solid, interaction of adsorbed gases at the solid surface, and kinetic study of the oxidation reaction. The third part reports the study of the catalytic activity in the oxidation reaction of CO of spinel catalysts (NiAl 2 O 4 and NiO+NiAl 2 O 4 ) obtained by calcination of nickel hydro-aluminates at high temperature. The formation of the spinel phase, the chemisorption of CO, O 2 and CO 2 on NiAl 2 O 4 , and the kinetic of the oxidation reaction are herein studied

Towards an elastic model of wurtzite AlN nanowires

International Nuclear Information System (INIS)

Mitrushchenkov, A; Chambaud, G; Yvonnet, J; He, Q-C

2010-01-01

Starting with ab initio calculations of AlN wurtzite [0001] nanowires with diameters up to 4 nm, a finite element method is developed to deal with larger nanostructures/nanoparticles. The ab initio calculations show that the structure of the nanowires can be well represented by an internal part with AlN bulk elastic properties, and one atomic surface layer with its own elastic behavior. The proposed finite element method includes surface elements with their own elastic properties using surface elastic coefficients deduced from the ab initio calculations. The elastic properties obtained with the finite element model compare very well with those obtained with the full ab initio calculations.

Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

Directory of Open Access Journals (Sweden)

Maw-Shung Lee

2014-01-01

Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

Effect of low and high heating rates on reaction path of Ni(V)/Al multilayer

Energy Technology Data Exchange (ETDEWEB)

Maj, Łukasz, E-mail: l.maj@imim.pl [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków (Poland); Morgiel, Jerzy; Szlezynger, Maciej [Institute of Metallurgy and Materials Science, Polish Academy of Sciences, 25 Reymonta St., 30-059 Kraków (Poland); Bała, Piotr; Cios, Grzegorz [AGH University of Science and Technology, Academic Centre for Materials and Nanotechnology, 30 Kawiory St., 30-055 Kraków (Poland)

2017-06-01

The effect of heating rates of Ni(V)/Al NanoFoils{sup ®} was investigated with transmission electron microscopy (TEM). The Ni(V)/Al were subjected to heating by using differential scanning calorimetry (DSC), in-situ TEM or electric pulse. Local chemical analysis was carried out using energy dispersive X-ray spectroscopy (EDS). Phase analysis was done with X-ray diffractions (XRD) and selected area electron diffractions (SAED). The experiments showed that slow heating in DSC results in development of separate exothermic effects at ∼230 °C, ∼280 °C and ∼390 °C, corresponding to precipitation of Al{sub 3}Ni, Al{sub 3}Ni{sub 2} and NiAl phases, respectively, i.e. like in vanadium free Ni/Al multilayers. Further heating to 700 °C allowed to obtain a single phase NiAl foil. The average grain size (g.s.) of NiAl phase produced in the DSC heat treated foil was comparable with the Ni(V)/Al multilayer period (∼50 nm), whereas in the case of reaction initiated with electric pulse the g.s. was in the micrometer range. Upon slow heating vanadium tends to segregate to zones parallel to the original multilayer internal interfaces, while in SHS process vanadium-rich phases precipitates at grain boundaries of the NiAl phase. - Highlights: • Peaks in DSC heating of Ni(V)/Al were explained by in-situ TEM observations. • Nucleation of Al{sub 3}Ni, Al{sub 3}Ni{sub 2} and NiAl at slow heating of Ni(V)/Al was documented. • Near surface NiAl obtained from NanoFoil show Ag precipitates at grain boundaries.

Quantitative Evaluation of Strain in Epitaxial 2H AlN Layers

International Nuclear Information System (INIS)

Nader, N.; Pezoldt, J.

2011-01-01

To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer. (author)

Femtosecond laser ablation and nanoparticle formation in intermetallic NiAl

Energy Technology Data Exchange (ETDEWEB)

Jorgensen, David J., E-mail: davidjjorgensen@engr.ucsb.edu; Titus, Michael S.; Pollock, Tresa M.

2015-10-30

Highlights: • The single-pulse fs laser ablation threshold of NiAl is 83 mJ/cm{sup 2}. • The transition between low- and high-fluence ablation regimes is 2.8 J/cm{sup 2}. • A bimodal size distribution of nanoparticles is formed with fs laser ablation. • Smaller nanoparticles are enriched in Al during pulsed fs laser ablation. • The target surface is depleted in Al during pulsed fs laser ablation. - Abstract: The ablation behavior of a stoichiometric intermetallic compound β-NiAl subjected to femtosecond laser pulsing in air has been investigated. The single-pulse ablation threshold for NiAl was determined to be 83 ± 4 mJ/cm{sup 2} and the transition to the high-fluence ablation regime occurred at 2.8 ± 0.3 J/cm{sup 2}. Two sizes of nanoparticles consisting of Al, NiAl, Ni{sub 3}Al and NiO were formed and ejected from the target during high-fluence ablation. Chemical analysis revealed that smaller nanoparticles (1–30 nm) tended to be rich in Al while larger nanoparticles (>100 nm) were lean in Al. Ablation in the low-fluence regime maintained this trend. Redeposited material and nanoparticles remaining on the surface after a single 3.7 J/cm{sup 2} pulse, one hundred 1.7 J/cm{sup 2} pulses, or one thousand 250 mJ/cm{sup 2} pulses were enriched in Al relative to the bulk target composition. Further, the surface of the irradiated high-fluence region was depleted in Al indicating that the fs laser ablation removal rate of the intermetallic constituents in this regime does not scale with the individual pure element ablation thresholds.

Electrochemical formation of AlN in molten LiCl-KCl-Li{sub 3}N systems

Energy Technology Data Exchange (ETDEWEB)

Goto, Takuya [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)]. E-mail: goto@energy.kyoto-u.ac.jp; Iwaki, Takayuki [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

2005-01-30

Electrochemical formation of aluminum nitride was investigated in molten LiCl-KCl-Li{sub 3}N systems at 723 K. When Al was anodically polarized at 1.0 V (versus Li{sup +}/Li), oxidation of nitride ions proceeded to form adsorbed nitrogen atoms, which reacted with the surface to form AlN film. The obtained nitrided film had a thickness of sub-micron order. The obtained nitrided layer consisted of two regions; the outer layer involving AlN and aluminum oxynitride and the inner layer involving metallic Al and AlN. When Al electrode was anodically polarized at 2.0 V, anodic dissolution of Al electrode occurred to give aluminum ions, which reacted with nitride ions in the melt to produce AlN particles (1-5 {mu}m of diameter) of wurtzite structure.

Ab initio study of M2AlN (M = Ti,V,Cr)

International Nuclear Information System (INIS)

Sun, Zhimei; Music, Denis; Ahuja, Rajeev; Schneider, Jochen M

2005-01-01

We have studied M 2 AlN phases, where M = Ti, V, and Cr, by means of ab initio total energy calculations. The bulk modulus of M 2 AlN increases as Ti is replaced with V and Cr by 19.0% and 26.5%, respectively, which can be understood on the basis of the increased number of valence electrons filling the p-d hybridized bonding states. The bulk modulus of M 2 AlN is generally higher than that of the corresponding M 2 AlC phase, which may be explained by an extra electron in the former phases contributing to stronger chemical bonding. This work is important for fundamental understanding of elastic properties of these ternary nitrides and may inspire future experimental research. (letter to the editor)

Cd doping of AlN via ion implantation studied with perturbed angular correlation

CERN Document Server

Kessler, Patrick; Miranda, Sérgio MC; Simon, R; Correia, João Guilherme; Johnston, Karl; Vianden, Reiner

2012-01-01

AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing condition of implanted Cd in AlN was investigated with the method of the perturbed angular correlation (PAC). Therefore radioactive $^{117}$Cd or $^{111m}$Cd ions were implanted into thin AlN films on sapphire substrate with an energy of 30 keV and fluences in the range of 10$^{11}$ ions/cm$^{2}$. After thorough annealing with a proximity cap of the same material most of the Cd-probes occupy substitutional lattice sites and almost all implantation damage can be annealed. This results in a distinct frequency in the PAC spectra which increases with temperature. In contrast to the formation of an indium nitrogen-vacancy complex observed with the probe $^{111}$In on substitutional Al-sites no defects are bound to substi...

Promoting Effect of CeO2 Addition on Activity and Catalytic Stability in Steam Reforming of Methane over Ni/Al2O3

International Nuclear Information System (INIS)

Rakib, A.; Gennequin, C.; Ringot, S.; Aboukais, A.; Abi-Aad, E.; Dhainaut, T.

2011-01-01

Hydrogen production by steam reforming of methane was studied over Ni catalysts supported on CeO 2 , Al 2 O 3 and CeO 2 -Al 2 O 3 . These catalysts were prepared using the impregnation method and characterized by XRD. The effect of CeO2 promoter on the catalytic performance of Ni/Al 2 O 3 catalyst for methane steam reforming reaction was investigated. In fact, CeO 2 had a positive effect on the catalytic activity in this reaction. Experimental results demonstrated that Ni/CeO 2 -Al 2 O 3 catalyst showed excellent catalytic activity and high reaction performance. In addition, the effects of reaction temperature and metal content on the conversion of CH 4 and H 2 /CO ratio were also investigated. Results indicated that CH4 conversion increased significantly with the increase of the reaction temperature and metal content. (author)

The Ni3Al and NiAl alloys: a class of intermetallics which can replace the Ni-base superalloys for the aerospace high temperature structural applications

International Nuclear Information System (INIS)

Lucaci, M.; Vidu, C.D.; Vasile, E.

2001-01-01

The paper presents the results obtained in synthesizing Ni-base refractory intermetallics from elemental powder mixes. In view of this, four mixes were made for the Ni 3 Al intermetallics and five mixes for the NiAl ones. The compound synthesis was made at T = 660 o C under vacuum by the SHS method, in the thermo-explosion mode. The variable parameters were the compacting pressure and the aluminum amount in the mixes. The obtained materials were then characterized by the microstructure and by the physical properties. The product synthesis degree was followed as well as their influence on the types of microstructures obtained. The reaction products were evidenced by x-ray diffraction and by quantitative chemical microanalysis. The obtained results revealed the formation of the Ni 3 Al compound having a primitive cubic crystal lattice with a 0 = 3,564 Aa and the formation of the NiAl compound, of a bcc lattice having a 0 = 2,86 Aa. Those obtained prove the ample influences of the powder homogeneity degree and of the powder purity on the possibility to produce an adequate synthesis, as well as the influence of the amount liquid appeared in the system on the synthesis degree, on the reaction rate and on the porosity of materials obtained. (author)

Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

International Nuclear Information System (INIS)

Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

2015-01-01

Highlights: • AlN films grown at 150 °C by ALD using trimethylaluminum and H 2 /N 2 -plasma. • Nearly stoichiometric AlN films (ratio Al:N = 0.938), polycrystalline by XRD/TEM. • Refractive index of n = 1.908 and low thermal conductivity of κ = 1.66 W/(m K). • Free-standing AlN membranes mechanically stable and buckling free (tensile strain). • Membrane patterning by focused ion beam etching possible. - Abstract: Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H 2 /N 2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm 2 . The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications

Direct characterization of phase transformations and morphologies in moving reaction zones in Al/Ni nanolaminates using dynamic transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Kim, J.S., E-mail: judy.kim@materials.ox.ac.uk [Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Chemical Engineering and Materials Science/Molecular and Cellular Biology, University of California-Davis, 1 Shields Avenue, Davis, CA 95616 (United States); LaGrange, T.; Reed, B.W. [Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Knepper, R.; Weihs, T.P. [Department of Materials Science and Engineering, Johns Hopkins University, 3400 N. Charles St., Baltimore, MD 21218 (United States); Browning, N.D. [Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States); Chemical Engineering and Materials Science/Molecular and Cellular Biology, University of California-Davis, 1 Shields Avenue, Davis, CA 95616 (United States); Campbell, G.H. [Condensed Matter and Materials Division, Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, CA 94550 (United States)

2011-05-15

Highlights: > Fast phase transformations are examined in Al/Ni reactive nanolaminates. > Results visible only by dynamic transmission electron microscopy at ns resolution. > NiAl forms under 15 ns after reaction front in all three stoichiometries studied. > DTEM imaging reveals a transient cellular morphology in nonequiatomic films. - Abstract: Phase transformations and transient morphologies are examined as exothermic formation reactions self-propagate across Al/Ni nanolaminate films. The rapid evolution of these phases and sub-micrometer morphological features requires nanoscale temporal and spatial resolution that is not available with traditional in situ electron microscopy. This work uses dynamic transmission electron microscopy to identify intermetallic products and phase morphologies, as exothermic formation reactions self-propagate in nanolaminate films grown with 3:2, 2:3 and 1:1 Al/Ni atomic ratios. Single-shot diffraction patterns with 15 ns temporal resolution reveal that the NiAl intermetallic forms within {approx}15 ns of the reaction front's arrival in all three types of films and is the only intermetallic phase to form, as the reactions self-propagate and quench very rapidly. Time-resolved imaging reveals a transient cellular morphology in the Al-rich and Ni-rich foils, but not in the equiatomic films. The cellular features in the Al-rich and Ni-rich films are attributed to a cooling trajectory through a two-phase field of liquid + NiAl.

Strain-rate dependence for Ni/Al hybrid foams

Directory of Open Access Journals (Sweden)

Jung Anne

2015-01-01

Full Text Available Shock absorption often needs stiff but lightweight materials that exhibit a large kinetic energy absorption capability. Open-cell metal foams are artificial structures, which due to their plateau stress, including a strong hysteresis, can in principle absorb large amounts of energy. However, their plateau stress is too low for many applications. In this study, we use highly novel and promising Ni/Al hybrid foams which consist of standard, open-cell aluminium foams, where nanocrystalline nickel is deposited by electrodeposition as coating on the strut surface. The mechanical behaviour of cellular materials, including their behaviour under higher strain-rates, is governed by their microstructure due to the properties of the strut material, pore/strut geometry and mass distribution over the struts. Micro-inertia effects are strongly related to the microstructure. For a conclusive model, the exact real microstructure is needed. In this study a micro-focus computer tomography (μCT system has been used for the analysis of the microstructure of the foam samples and for the development of a microstructural Finite Element (micro-FE mesh. The microstructural FE models have been used to model the mechanical behaviour of the Ni/Al hybrid foams under dynamic loading conditions. The simulations are validated by quasi-static compression tests and dynamic split Hopkinson pressure bar tests.

A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

Science.gov (United States)

Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

2018-05-01

Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

Lattice stability of metastable AlN and wurtzite-to-rock-salt structural transformation by CALPHAD modeling

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yanhui, E-mail: yanhui.z@hotmail.com [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); High-performance Ceramics Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang (China); Franke, Peter; Li, Dajian; Seifert, Hans Jürgen [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

2016-12-01

Reliable lattice stability of cubic AlN with rock-salt structure (rs-AlN) is the prerequisite of accurate thermodynamic modeling of cubic (M, Al)N solid solutions (M = Ti, Zr, Cr etc.). In order to derive the Gibbs energy of metastable rs-AlN, and then its lattice stability, we did the pressure-temperature (P-T) assessment of AlN phases by equations-of-state modeling. Meanwhile, the molar volumes and the heat capacities of wurtzite and rock-salt AlN, as well as the wurtzite-to-rock-salt structural transition at high P&T were successfully incorporated in CALPHAD-type database by integrating thermodynamic data from experiments and ab-initio calculations. These results promise subsequent investigations on phase stabilities and transitions of solid solutions with AlN component and the development of novel multicomponent coatings. - Highlights: • Phase stability investigation for novel multi-component metastable coatings. • Structural transition at high temperature and high pressure. • Integrating thermodynamic data from ab-initio calculations and experiments. • Thermal expansion, isothermal compressibility and heat capacity of w-AlN and rs-AlN.

Development of a Hydrogen Uptake-Release Mg-Based Alloy by Adding a Polymer CMC (Carboxymethylcellulose, Sodium Salt) via Reaction-Accompanying Milling

Science.gov (United States)

Kwak, Young Jun; Choi, Eunho; Song, Myoung Youp

2018-03-01

The addition of carboxymethylcellulose, sodium salt (CMC) might improve the hydrogen uptake and release properties of Mg since it has a relatively low melting point and the melting of CMC during milling in hydrogen (reaction-accompanying milling) may make the milled samples be in good states to absorb and release hydrogen rapidly and to have a large hydrogen-storage capacity. Samples with compositions of 95 w/o Mg + 5 w/o CMC (named Mg-5CMC) and 90 w/o Mg + 10 w/o CMC (named Mg-10CMC) were prepared by adding CMC via reaction-accompanying milling. Activation of Mg-10CMC was completed after about 3 hydrogen uptake-release cycles. Mg-10CMC had a higher initial hydrogen uptake rate and a larger amount of hydrogen absorbed in 60 min, U (60 min), than Mg-5CMC before and after activation. At the cycle number of three (CN = 3), Mg-10CMC had a very high initial hydrogen uptake rate (1.56 w/o H/min) and a large U (60 min) (5.57 w/o H) at 593 K in hydrogen of 12 bar, showing that the activated Mg-10CMC has an effective hydrogen-storage capacity of about 5.6 w/o at 593 K in hydrogen of 12 bar at CN = 3. At CN = 2, Mg-10CMC released 1.00 w/o H in 2.5 min, 4.67 w/o H in 10 min, and 4.76 w/o H in 60 min at 648 K in hydrogen of 1.0 bar. The milling in hydrogen of Mg with CMC is believed to generate imperfections and cracks and reduce the particle size. The addition of 10 w/o CMC was more effective on the initial hydrogen uptake rate and U (60 min) compared with the 10 w/o additions of NbF5, TaF5, Fe2O3, and MnO, and the 10 w/o simultaneous addition of Ni, Fe, and Ti. To the best of our knowledge, this study is the first in which a polymer CMC is added to Mg by reaction-accompanying milling to improve the hydrogen storage properties of Mg.

Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

International Nuclear Information System (INIS)

Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

2011-01-01

Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

International Nuclear Information System (INIS)

Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

2005-01-01

The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering

Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

International Nuclear Information System (INIS)

Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

2009-01-01

The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

2017-01-01

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding

2017-08-08

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

2017-01-01

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Influence of TMAl preflow on AlN epitaxy on sapphire

KAUST Repository

Sun, Haiding

2017-05-12

The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

Synthesis of AlN fine particles by surface corona discharge-CVD; Enmen corona hoden CVD ni yoru AlN biryushi no gosei

Energy Technology Data Exchange (ETDEWEB)

Oyama, Y.; Chiba, S. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K> ; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

1994-09-15

With an objective to improve insulating and heat dissipating substrates substituting for the conventional alumina substrates, discussions been given on synthesis of AlN fine particles by means of gaseous phase reaction between AlCl3 and NH3 using surface corona discharge as a reaction exciting source. AIN particles should be highly pure to acquire high-heat conductivity, and fine and uniform particles to obtain dense sinters at low temperatures. The particles obtained by using the present method were amorphous particles having nearly spherical form and smooth surface. The particle diameter depends on the initial concentration of AlCl3, and is proportional to 0.4 square of the concentration. Within the range in the present experiment, the diameters ranged from 208 nm to 431 nm. The particle diameter increased in proportion to 0.2 square of an average gas stagnating time within the plasma generating region. The particle size distribution consisted of highly uniform fine particles having the standard deviation at about the same degree as that in the conventional thermal CVD process. The alumina-based oxygen was removed completely by reduction due to graphite powder, but the re-oxidation during removal of the remaining graphite using combustion had oxygen remained at 7.4% by weight. 16 refs., 7 figs.

Effects of solvation shells and cluster size on the reaction of aluminum clusters with water

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Weiwei Mou

2011-12-01

Full Text Available Reaction of aluminum clusters, Aln (n = 16, 17 and 18, with liquid water is investigated using quantum molecular dynamics simulations, which show rapid production of hydrogen molecules assisted by proton transfer along a chain of hydrogen bonds (H-bonds between water molecules, i.e. Grotthuss mechanism. The simulation results provide answers to two unsolved questions: (1 What is the role of a solvation shell formed by non-reacting H-bonds surrounding the H-bond chain; and (2 whether the high size-selectivity observed in gas-phase Aln-water reaction persists in liquid phase? First, the solvation shell is found to play a crucial role in facilitating proton transfer and hence H2 production. Namely, it greatly modifies the energy barrier, generally to much lower values (< 0.1 eV. Second, we find that H2 production by Aln in liquid water does not depend strongly on the cluster size, in contrast to the existence of magic numbers in gas-phase reaction. This paper elucidates atomistic mechanisms underlying these observations.

Corrosion Resistance of Ni/Al2O3 Nanocomposite Coatings

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Beata KUCHARSKA

2016-05-01

Full Text Available Nickel matrix composite coatings with ceramic disperse phase have been widely investigated due to their enhanced properties, such as higher hardness and wear resistance in comparison to the pure nickel. The main aim of this research was to characterize the structure and corrosion properties of electrochemically produced Ni/Al2O3 nanocomposite coatings. The coatings were produced in a Watts bath modified by nickel grain growth inhibitor, cationic surfactant and the addition of alumina particles (low concentration 5 g/L. The process has been carried out with mechanical and ultrasonic agitation. The Ni/Al2O3 nanocomposite coatings were characterized by SEM, XRD and TEM techniques. In order to evaluate corrosion resistance of produced coatings, the corrosion studies have been carried out by the potentiodynamic method in a 0.5 M NaCl solution. The corrosion current, corrosion potential and corrosion rate were determined. Investigations of the morphology, topography and corrosion damages of the produced surface layers were performed by scanning microscope techniques. DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7407

Microstructure and Properties of Ni and Ni/Al2O3 Coatings Electrodeposited at Various Current Densities

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Góral A.

2016-03-01

Full Text Available The study presents investigations of an influence of various direct current densities on microstructure, residual stresses, texture, microhardness and corrosion resistance of the nickel coatings electrodeposited from modified Watt’s baths. The properties of obtained coatings were compared to the nano-crystalline composite Ni/Al2O3 coatings prepared under the same plating conditions. The similarities and differences of the obtained coatings microstructures visible on both their surfaces and cross sections and determined properties were presented. The differences in the growth character of the Ni matrix and in the microstructural properties were observed. All electrodeposited Ni and Ni/Al2O3 coatings were compact and well adhering to the steel substrates. The thickness and the microhardness of the Ni and Ni/Al2O3 deposits increased significantly with the current density in the range 2 - 6 A/dm2. Residual stresses are tensile and they reduced as the current density increased. The composite coatings revealed better protection from the corrosion of steel substrate than pure nickel in solution 1 M NaCl.

Design of the Precipitation Process for Ni-Al Alloys with Optimal Mechanical Properties: A Phase-Field Study

Science.gov (United States)

Ta, Na; Zhang, Lijun; Du, Yong

2014-04-01

An attempt to design the heat treatment schedule for binary Ni-Al alloys with optimal mechanical properties was made in the present work. A series of quantitative three-dimensional (3-D) phase-field simulations of microstructure evolution in Ni-Al alloys during the precipitation process were first performed using MICRESS (MICRostructure Evolution Simulation Software) package developed in the formalism of the multi-phase field model. The coupling to CALPHAD (CALculation of PHAse Diagram) thermodynamic and atomic mobility databases was realized via TQ interface. Moreover, the temperature-dependent lattice misfits and elastic constants were utilized for simulation. The effect of the alloy composition and aging temperature on microstructure evolution was extensively studied with the aid of statistical analysis. After that, an evaluation function was proposed for evaluating the optimal heat treatment schedule by choosing the phase fraction, grain size, and shape factor of γ' precipitate as the evaluation indicators. Based on 50 groups of phase-field-simulated and experimental microstructure information, as well as the proposed evaluation function, the optimal alloy composition, aging temperature, and aging time for binary Ni-Al alloy with optimal mechanical properties were finally chosen. The successful application in the present Ni-Al alloys indicates that it is possible to design the optimal alloy composition and heat treatment for other binary and even multicomponent alloys with optimal mechanical properties based on the evaluation function and the sufficient microstructure information. Additionally, the combination of the present method and the key experiments can definitely accelerate the material design and improve the efficiency and accuracy.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

KAUST Repository

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-01-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest

Effect of NiAl underlayer and spacer on magnetoresistance of current-perpendicular-to-plane spin valves using Co2Mn(Ga0.5Sn0.5) Heusler alloy

International Nuclear Information System (INIS)

Hase, N.; Nakatani, T.M.; Kasai, S.; Takahashi, Y.K.; Furubayashi, T.; Hono, K.

2012-01-01

We investigated the effect of a NiAl underlayer and spacer on magnetoresistive (MR) properties in current-perpendicular-to-plane spin valves (CPP-SVs) using Co 2 Mn(Ga 0.5 Sn 0.5 ) (CMGS) Heusler alloy ferromagnetic layers. The usage of a NiAl underlayer allowed a high temperature annealing for the L2 1 ordering of the bottom CMGS layer, giving rise to a MR ratio of 10.2% at room temperature. We found that the usage of a NiAl spacer layer also improved the tolerance of the multilayer structure against thermal delamination, which allowed annealing to induce the L2 1 structure in both the bottom and top CMGS layers. However, the short spin diffusion length of NiAl resulted in a lower MR ratio compared to that obtained using a Ag spacer. Transmission electron microscopy of the multilayer structure of CPP-SVs showed that the atomically flat layered structure was maintained after the annealing. - Highlights: → CPP spin valves using Co 2 Mn(Ga 0.5 Sn 0.5 ) ferromagnetic layers with a new underlayer material. → NiAl underlayer and spacer improve the thermal tolerance of the spin valve structure. → NiAl underlayer improves MR ratio compared to Ag because of higher annealing temperature. → NiAl spacer degrades MR ratios compared to Ag because of short spin diffusion length. → Potential of heat resistant underlayer and spacer layer for CPP-SV using Heusler alloy.

Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

Energy Technology Data Exchange (ETDEWEB)

Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

2008-11-15

In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

International Nuclear Information System (INIS)

Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

2008-01-01

In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

Investigating the atomic level influencing factors of glass forming ability in NiAl and CuZr metallic glasses

Energy Technology Data Exchange (ETDEWEB)

Sedighi, Sina; Kirk, Donald Walter; Singh, Chandra Veer, E-mail: chandraveer.singh@utoronto.ca; Thorpe, Steven John [Department of Materials Science and Engineering, University of Toronto, Room 140, 184 College Street, Toronto, Ontario M5S 3E4 (Canada)

2015-09-21

Bulk metallic glasses are a relatively new class of amorphous metal alloy which possess unique mechanical and magnetic properties. The specific concentrations and combinations of alloy elements needed to prevent crystallization during melt quenching remains poorly understood. A correlation between atomic properties that can explain some of the previously identified glass forming ability (GFA) anomalies of the NiAl and CuZr systems has been identified, with these findings likely extensible to other transition metal–transition metal and transition metal–metalloid (TM–M) alloy classes as a whole. In this work, molecular dynamics simulation methods are utilized to study thermodynamic, kinetic, and structural properties of equiatomic CuZr and NiAl metallic glasses in an attempt to further understand the underlying connections between glass forming ability, nature of atomic level bonding, short and medium range ordering, and the evolution of structure and relaxation properties in the disordered phase. The anomalous breakdown of the fragility parameter as a useful GFA indicator in TM–M alloy systems is addressed through an in-depth investigation of bulk stiffness properties and the evolution of (pseudo)Gruneisen parameters over the quench domain, with the efficacy of other common glass forming ability indicators similarly being analyzed through direct computation in respective CuZr and NiAl systems. Comparison of fractional liquid-crystal density differences in the two systems revealed 2-3 times higher values for the NiAl system, providing further support for its efficacy as a general purpose GFA indicator.

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

International Nuclear Information System (INIS)

Xu, Liang; Wang, Lingling; Huang, Weiqing; Xiao, Wenzhi; Xiao, Gang

2014-01-01

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d 0 magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

International Nuclear Information System (INIS)

Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

2005-01-01

The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

Solvent-Free Biginelli Reactions Catalyzed by Hierarchical Zeolite Utilizing a Ball Mill Technique: A Green Sustainable Process

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Ameen Shahid

2017-03-01

Full Text Available A sustainable, green one-pot process for the synthesis of dihydropyrimidinones (DHPMs derivatives by a three-component reaction of β-ketoester derivatives, aldehyde and urea or thiourea over the alkali-treated H-ZSM-5 zeolite under ball-milling was developed. Isolation of the product with ethyl acetate shadowed by vanishing of solvent was applied. The hierachical zeolite catalyst (MFI27_6 showed high yield (86%–96% of DHPMs in a very short time (10–30 min. The recyclability of the catalyst for the subsequent reactions was examined in four subsequent runs. The catalyst was shown to be robust without a detectable reduction in catalytic activity, and high yields of products showed the efficient protocol of the Biginelli reactions.

Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

Energy Technology Data Exchange (ETDEWEB)

Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

2017-06-15

Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

Growth of AlN films and their characterization

Energy Technology Data Exchange (ETDEWEB)

Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

2006-06-15

Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

Science.gov (United States)

Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

2015-12-01

To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

Science.gov (United States)

Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

2015-01-01

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

Hydrocracking of cumene over Ni/Al 2O 3 as influenced by CeO 2 doping and γ-irradiation

Science.gov (United States)

El-Shobaky, G. A.; Doheim, M. M.; Ghozza, A. M.

2004-01-01

Cumene hydrocracking was carried out over pure and doped Ni/Al 2O 3 solids and also, on these solids after exposure to different doses of γ-rays between 0.4 and 1.6 MGy. The dopant concentration was varied between 1 and 4 mol% CeO 2. Pure and doped samples were subjected to heat treatment at 400°C and cumene hydrocracking reaction was carried out using various solids at temperatures between 250°C and 400°C by means of micropulse technique. The results showed that both CeO 2 doping and γ-irradiation of the investigated system brought about an increase in its specific surface area. γ-irradiation of pure samples increased their catalytic activities effectively. However, the doping caused a decrease in the catalytic activity. γ-irradiation of the doped samples brought about a net decrease in the catalytic activity. The catalytic reaction products over different investigated solids were ethylbenzene as a major product together with different amounts of toluene, benzene and C 1-C 3 gaseous hydrocarbons. The selectivity towards the formation of various reaction products varies with the reaction temperature, doping and γ-irradiation.

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

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Shuo-Wei Chen

2016-04-01

Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

CVD of SiC and AlN using cyclic organometallic precursors

Science.gov (United States)

Interrante, L. V.; Larkin, D. J.; Amato, C.

1992-01-01

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Single-crystalline AlN growth on sapphire using physical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

2011-02-07

A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

Influence of SrF_2-doping in AlN ceramics on scintillation and dosimeter properties

International Nuclear Information System (INIS)

Kojima, Kaori; Okada, Go; Fukuda, Kentaro; Yanagida, Takayuki

2016-01-01

In this study, we synthesized undoped AlN and SrF_2-doped AlN (AlN-SrF_2) ceramics by Spark Plasma Sintering (SPS), and we characterized their optical, scintillation and dosimeter properties. The prepared undoped AlN ceramic had gray color and visually non-transparent whereas, with an addition of SrF_2, the transparency improved and became translucent. The measured in-line transmittance was approximately 0.2% at wavelengths longer than 500 nm. While the addition of SrF_2 decreased the scintillation intensity, the decay time was significantly fastened, which is a great advantage for fast photon counting-based measurements. Both the thermally-stimulated luminescence (TSL) and optically-stimulated luminescence (OSL) showed good linear response from the milli-gray range to over 10 Gy. The sensitivity seems to decrease by an addition of SrF_2 as it suppresses structural defect centers which are responsible for dosimeter properties. However, the main TSL glow peak position shifts to higher temperature with the addition of SrF_2, which indicates that inclusion of SrF_2 improves the TSL signal stability. - Highlights: • We synthesized undoped and SrF_2-doped AlN ceramics by Spark Plasma Sintering. • We evaluated scintillator and dosimeter properties of undoped and SrF_2-doped AlN. • By doping with SrF_2, the decay time is shortened. • By doping with SrF_2, the stability of TSL and OSL is improved.

Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

Energy Technology Data Exchange (ETDEWEB)

Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

2015-04-05

Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

Properties of planar structures based on Policluster films of diamond and AlN

Science.gov (United States)

Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

2018-01-01

AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

Ball Milling Assisted Solvent and Catalyst Free Synthesis of Benzimidazoles and Their Derivatives.

Science.gov (United States)

El-Sayed, Taghreed H; Aboelnaga, Asmaa; Hagar, Mohamed

2016-08-24

Benzoic acid and o-phenylenediamine efficiently reacted under the green solvent-free Ball Milling method. Several reaction parameters were investigated such as rotation frequency; milling balls weight and milling time. The optimum reaction condition was milling with 56.6 g weight of balls at 20 Hz frequency for one hour milling time. The study was extended for synthesis of a series of benzimidazol-2-one or benzimidazol-2-thione using different aldehydes; carboxylic acids; urea; thiourea or ammonium thiocyanate with o-phenylenediamine. Moreover; the alkylation of benzimidazolone or benzimidazolthione using ethyl chloroacetate was also studied.

XRD is the main key to the mechanochemical processing

International Nuclear Information System (INIS)

Mozaffari, M.; Amighian, J.

2000-01-01

Mechanochemical processing is a process that makes use of chemical reactions mechanically activated by high-energy ball milling (HEBM). This technique has been the subject of great interest in recent years due to its promise for producing improved novel materials. Ultra fine powders in the range 10-100 nm can be obtained by mixing the right ratio of the components, appropriate for a desired phase. These raw materials together with several hardened-steel vial and milled for an optimum time using Spex or Planetary mills. In this process 2 factors, milling time and the ball to powder mass ratio, should carefully be optimized. These will be checked by successive XRD patterns. To see the ability of XRD in this technique, some single phase Ni-Al and Mn ferrites were prepared. The main key to the formation of different phases at any stage of processing was XRD patterns. Also by using Scherrer formula it was possible to measure the particle size of the milled powders. (Author)

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

Science.gov (United States)

Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

2018-03-01

Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

Reaction-assisted diffusion bonding of TiAl alloy to steel

Energy Technology Data Exchange (ETDEWEB)

Simões, S., E-mail: ssimoes@fe.up.pt [CEMUC, Department of Metallurgical and Materials Engineering, University of Porto, R. Dr. Roberto Frias, 4200-465 Porto (Portugal); Viana, F. [CEMUC, Department of Metallurgical and Materials Engineering, University of Porto, R. Dr. Roberto Frias, 4200-465 Porto (Portugal); Ramos, A.S.; Vieira, M.T. [CEMUC, Department of Mechanical Engineering, University of Coimbra, R. Luís Reis Santos, 3030-788 Coimbra (Portugal); Vieira, M.F. [CEMUC, Department of Metallurgical and Materials Engineering, University of Porto, R. Dr. Roberto Frias, 4200-465 Porto (Portugal)

2016-03-01

The dissimilar joining of TiAl to AISI 310 stainless steel by a reaction-assisted diffusion bonding process, using Ni/Al nanolayers as an interlayer, was investigated in the present work. The Ni and Al alternated nanolayers were deposited by d.c. magnetron sputtering onto the base materials, with a bilayer thickness of 14 nm. Joining experiments were performed at 800 °C for 60 min with compressive stress of 25 and 50 MPa. The effectiveness of the interlayer on the bonding process was assessed by microstructural characterization of the interface and by mechanical tests. Diffusion bonded joints were characterized by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), scanning transmission electron microscopy (STEM) and analyzed by energy dispersive X-ray spectroscopy (EDS) in SEM and TEM and Fast Fourier Transform (FFT). The thickness of the interface region, together with its microstructural and mechanical characteristics, is affected by the use of Ni/Al multilayers; which promote joints with lower hardness values, closer to the values of the base materials, and exhibit higher shear strength. - Highlights: • Dissimilar joining by a reaction-assisted diffusion bonding were studied. • Ni/Al nanolayers allows join TiAl to steel in less demanding processing conditions. • The microstructural and mechanical characterization of the joints were investigated. • The fracture occurring in the TiAl base material attests to the sound joining. • Shear strength value decreases for joints with base materials without nanolayers.

Influence of Solvent on Liquid Phase Hydrodeoxygenation of Furfural-Acetone Condensation Adduct using Ni/Al2O3-ZrO2 Catalysts

Science.gov (United States)

Ulfa, S. M.; Mahfud, A.; Nabilah, S.; Rahman, M. F.

2017-02-01

Influence of water and acidic protic solvent on hydrodeoxygenation (HDO) of the furfural-acetone adduct (FAA) over Ni/Al2O3-ZrO2 (NiAZ) catalysts were investigated. The HDO of FAA was carried out in a batch reactor at 150°C for 8 hours. The NiAZ catalysts were home-made catalysts which were prepared by wet impregnation method with 10 and 20% nickel loading. The HDO reaction of FAA using 10NiAZ in water at 150°C gave alkane and oxygenated hydrocarbons at 31.41% with selectivity over tridecane (C13) in 6.67%. On the other hand, a reaction using acetic acid:water (1:19 v/v) in similar reaction condition gave only oxygenated compounds and hydrocracking product (C8-C10). The formation of tridecane (C13) was proposed by hydrogenation of C=O and C=C followed by decarboxylation without hydrocracking process. The presence of water facilitated decarboxylation mechanism by stabilized dehydrogenated derivatives of FAA.

Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

Directory of Open Access Journals (Sweden)

Korbutowicz R.

2016-03-01

Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

International Nuclear Information System (INIS)

Langmi, Henrietta W.; McGrady, G. Sean

2008-01-01

This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

Influence of substrate bias on the structure and properties of (Ti, Al)N films deposited by filtered cathodic vacuum arc

International Nuclear Information System (INIS)

Cheng, Y.H.; Tay, B.K.; Lau, S.P.; Shi, X.

2001-01-01

(Ti, Al)N films were deposited by an off-plane, double-bend, filtered cathodic vacuum arc technique in N 2 atmosphere at room temperature. The (Ti, Al)N films deposited are atomically smooth. The influence of substrate negative bias at the wide range (0-1000 V) on the deposition rate, surface morphology, crystal structure, internal stress, and mechanical properties of (Ti, Al)N films were systematically studied. Increasing substrate bias results in the decrease of deposition rate and the increase of surface roughness monotonically. At the bias of 0 V, (Ti, Al)N films are amorphous, and the internal stress, hardness, and Young's modulus for the deposited films are fairly low. With increasing substrate bias to 200 V, single-phase face-centered cubic-type nanocrystalline (Ti, Al)N films can be obtained, and the internal stress, hardness, and Young's modulus increase to the maximum of 7 GPa, 28 GPa, and 240 GPa, respectively. Further increase of substrate bias results in the decrease of intensity and the broadening of x-ray diffraction lines, and the gradual decrease of internal stress, hardness, and Young's modulus in (Ti, Al)N films

Fabrication of AlN thin films on different substrates at ambient temperature

CERN Document Server

Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

2002-01-01

Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

2015-07-01

GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

Science.gov (United States)

Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

2018-05-01

The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

Synthesis and Characterization of Nanocrystalline Ni50Al50-xMox (X=0-5 Intermetallic Compound During Mechanical Alloying Process

Directory of Open Access Journals (Sweden)

A. Khajesarvi

2015-07-01

Full Text Available In the present study, nanocrystalline Ni50Al50-xMox (X = 0, 0.5, 1, 2.5, 5 intermetallic compound was produced through mechanical alloying of nickel, aluminum, and molybdenum powders. AlNi compounds with good and attractive properties such as high melting point, high strength to weight ratio and high corrosion resistance especially at high temperatures have attracted the attention of many researchers. Powders produced from milling were analyzed using scanning electron microscopy (SEM and X-ray diffractometry (XRD. The results showed that intermetallic compound of NiAl formed at different stage of milling operation. It was concluded that at first disordered solid solution of (Ni,Al was formed then it converted into ordered intermetallic compound of NiAl. With increasing the atomic percent of molybdenum, average grain size decreased from 3 to 0.5 μm. Parameter lattice and lattice strain increased with increasing the atomic percent of molybdenum, while the crystal structure became finer up to 10 nm. Also, maximum microhardness was obtained for NiAl49Mo1 alloy.

Response to Thermal Exposure of Ball-Milled Aluminum-Borax Powder Blends

Science.gov (United States)

Birol, Yucel

2013-04-01

Aluminum-borax powder mixtures were ball milled and heated above 873 K (600 °C) to produce Al-B master alloys. Ball-milled powder blends reveal interpenetrating layers of deformed aluminum and borax grains that are increasingly refined with increasing milling time. Thermal exposure of the ball-milled powder blends facilitates a series of thermite reactions between these layers. Borax, dehydrated during heating, is reduced by Al, and B thus generated reacts with excess Al to produce AlB2 particles dispersed across the aluminum grains starting at 873 K (600 °C). AlB2 particles start to form along the interface of the aluminum and borax layers. Once nucleated, these particles grow readily to become hexagonal-shaped crystals that traverse the aluminum grains with increasing temperatures as evidenced by the increase in the size as well as in the number of the AlB2 particles. Ball milling for 1 hour suffices to achieve a thermite reaction between borax and aluminum. Ball milling further does not impact the response of the powder blend to thermal exposure. The nucleation-reaction sites are multiplied, however, with increasing milling time and thus insure a higher number of smaller AlB2 particles. The size of the AlB2 platelets may be adjusted with the ball milling time.

The optical properties and applications of AlN thin films prepared by a helicon sputtering system

CERN Document Server

Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

2002-01-01

AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

Low-temperature growth of high quality AlN films on carbon face 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

2008-01-15

AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

NARCIS (Netherlands)

Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

2006-01-01

A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl

Effect of olive mill wastewater phenol compounds on reactive carbonyl species and Maillard reaction end-products in ultrahigh-temperature-treated milk

NARCIS (Netherlands)

Troise, A.D.; Fiore, A.; Colantuono, A.; Kokkinidou, S.; Peterson, D.G.; Fogliano, V.

2014-01-01

Thermal processing and Maillard reaction (MR) affect the nutritional and sensorial qualities of milk. In this paper an olive mill wastewater phenolic powder (OMW) was tested as a functional ingredient for inhibiting MR development in ultrahigh-temperature (UHT)-treated milk. OMW was added to milk at

Ti, Al and N adatom adsorption and diffusion on rocksalt cubic AlN (001) and (011) surfaces: Ab initio calculations

Science.gov (United States)

Mastail, C.; David, M.; Nita, F.; Michel, A.; Abadias, G.

2017-11-01

We use ab initio calculations to determine the preferred nucleation sites and migration pathways of Ti, Al and N adatoms on cubic NaCl-structure (B1) AlN surfaces, primary inputs towards a further thin film growth modelling of the TiAlN alloy system. The potential energy landscape is mapped out for both metallic species and nitrogen adatoms for two different AlN surface orientations, (001) and (110), using density functional theory. For all species, the adsorption energies on AlN(011) surface are larger than on AlN(001) surface. Ti and Al adatom adsorption energy landscapes determined at 0 K by ab initio show similar features, with stable binding sites being located in, or near, epitaxial surface positions, with Ti showing a stronger binding compared to Al. In direct contrast, N adatoms (Nad) adsorb preferentially close to N surface atoms (Nsurf), thus forming strong N2-molecule-like bonds on both AlN(001) and (011). Similar to N2 desorption mechanisms reported for other cubic transition metal nitride surfaces, in the present work we investigate Nad/Nsurf desorption on AlN(011) using a drag calculation method. We show that this process leaves a Nsurf vacancy accompanied with a spontaneous surface reconstruction, highlighting faceting formation during growth.

Growth of C60 thin films on Al2O3/NiAl(100) at early stages

Science.gov (United States)

Hsu, S.-C.; Liao, C.-H.; Hung, T.-C.; Wu, Y.-C.; Lai, Y.-L.; Hsu, Y.-J.; Luo, M.-F.

2018-03-01

The growth of thin films of C60 on Al2O3/NiAl(100) at the earliest stage was studied with scanning tunneling microscopy and synchrotron-based photoelectron spectroscopy under ultrahigh-vacuum conditions. C60 molecules, deposited from the vapor onto an ordered thin film of Al2O3/NiAl(100) at 300 K, nucleated into nanoscale rectangular islands, with their longer sides parallel to direction either [010] or [001] of NiAl. The particular island shape resulted because C60 diffused rapidly, and adsorbed and nucleated preferentially on the protrusion stripes of the crystalline Al2O3 surface. The monolayer C60 film exhibited linear protrusions of height 1-3 Å, due to either the structure of the underlying Al2O3 or the lattice mismatch at the boundaries of the coalescing C60 islands; such protrusions governed also the growth of the second layer. The second layer of the C60 film grew only for a C60 coverage >0.60 ML, implying a layer-by-layer growth mode, and also ripened in rectangular shapes. The thin film of C60 was thermally stable up to 400 K; above 500 K, the C60 islands dissociated and most C60 desorbed.

Investigation of Shock-Induced Reactions in a Ni+Al Powder Mixture

International Nuclear Information System (INIS)

Eakins, D. E.; Thadhani, N. N.

2006-01-01

The shock-compression and reaction response of equi-volumetric micron-scale (∼50-60% dense) spherical nickel and aluminum powder mixtures is investigated in the range of the calculated crush-up pressure (P = 0.4 GPa) and up to 6 GPa. Time resolved stress measurements (using PVDF gauges) coupled with VISAR data is used to determine the shock states. Evidence of reaction or lack thereof is inferred by comparing the measured states with calculated Hugoniot state of reaction products based on the ballotechnic model proposed by Bennett and Horie, (Shock Waves 4:127-136). Post-impact micro-structural analysis of recovered material and comparison of calculated and measured product states is used to establish the criterion for reaction occurring in the shock or post-shock states

Dilution rate and microstructure of TIG arc Ni-Al powder surfacing layer

Institute of Scientific and Technical Information of China (English)

SHAN Jiguo; DONG Wei; TAN Wenda; ZHANG Di; PEN Jialie

2007-01-01

Surfacing beads are prepared by a direct current tungsten inert gas arc nickel-aluminum (Ni-Al) powder surfacing process. With the aim of controlling the dilution rate and obtaining surfacing beads rich in intermetallic compounds, the effects of surfacing parameters on geometric parameters, dilution rate, composition, and microstructure of the bead are investigated. An assistant cooler, which can potentially reduce the temperature of the base metal, is used in the surfacing process and its effect on dilution rate and microstructure is studied. The result indicates that with the surfacing parameter combination of low current and speed, the width and penetration of the bead decrease, reinforcement increases, and dilution rate drops markedly. With the reduc- tion of the parameter combination, the intergranular phase T-(Fe, Ni) is formed in the grain boundaries of Ni-Al interme- tallic matrix instead of the intergranular phase α-Fe, and large amount of intermetallics are obtained. With the use of an assistant cooler on a selected operation condition during the surfacing process, the reinforcement of the bead increases, penetration decreases, and dilution rate declines. The use of an assistant cooler helps obtain a surfacing bead composed of only intermetallics.

Effect of milling time on microstructure and properties of Nano-titanium polymer by high-energy ball milling

Science.gov (United States)

Wang, Bo; Wei, Shicheng; Wang, Yujiang; Liang, Yi; Guo, Lei; Xue, Junfeng; Pan, Fusheng; Tang, Aitao; Chen, Xianhua; Xu, Binshi

2018-03-01

Nano-titanium (Nano-Ti) was prepared by high-energy ball milling from pure Ti power and grinding agents (Epoxy resin) at room temperature. The effect of milling time on structure and properties of Nano-Ti polymer were investigated systematically. The results show that high-energy ball milling is an effective way to produce Nano-Ti polymer. The dispersion stability and compatibility between Ti power and grinding agents are improved by prolonging the milling time at a certain degree, that is to say, the optimization milling time is 240 min. The particle size of Ti powder and the diffraction peaks intensity of Ti decrease obviously as the milling time increases due to the compression stress, shear friction and other mechanical forces are formed during ball milling. FT-IR result displays that the wavenumber of all the bands move to lower wavenumber after ball milling, and the epoxy ring is open. The system internal energy rises owing to the broken epoxy group and much more Nano-Ti is formed to promote the grafting reaction between Nano-Ti and epoxy resin. The results from TEM and XPS also prove that. And the grafting ration is maximum as the milling time is 240 min, the mass loss ratio is 17.53%.

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Energy Technology Data Exchange (ETDEWEB)

Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

Enhanced Piezoelectric Response of AlN via CrN Alloying

Energy Technology Data Exchange (ETDEWEB)

Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

2018-03-01

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the CrxAl1-xN system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in CrxAl1-xN alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that CrxAl1-xN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that CrxAl1-xN is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position CrxAl1-xN as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

Enhanced Piezoelectric Response of AlN via CrN Alloying

Science.gov (United States)

Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

2018-03-01

Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the Crx Al1 -x N system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Crx Al1 -x N alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that Crx Al1 -x N has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Crx Al1 -x N is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position Crx Al1 -x N as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

Science.gov (United States)

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-03-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

MECHANISTIC KINETIC MODELS FOR STEAM REFORMING OF CONCENTRATED CRUDE ETHANOL ON NI/AL2O3 CATALYST

Directory of Open Access Journals (Sweden)

O. A. OLAFADEHAN

2015-05-01

Full Text Available Mechanistic kinetic models were postulated for the catalytic steam reforming of concentrated crude ethanol on a Ni-based commercial catalyst at atmosphere pressure in the temperature range of 673-863 K, and at different catalyst weight to the crude ethanol molar flow rate ratio (in the range 0.9645-9.6451 kg catalyst h/kg mole crude ethanol in a stainless steel packed bed tubular microreactor. The models were based on Langmuir-Hinshelwood-Hougen-Watson (LHHW and Eley-Rideal (ER mechanisms. The optimization routine of Nelder-Mead simplex algorithm was used to estimate the inherent kinetic parameters in the proposed models. The selection of the best kinetic model amongst the rival kinetic models was based on physicochemical, statistical and thermodynamic scrutinies. The rate determining step for the steam reforming of concentrated crude ethanol on Ni/Al2O3 catalyst was found to be surface reaction between chemisorbed CH3O and O when hydrogen and oxygen were adsorbed as monomolecular species on the catalyst surface. Excellent agreement was obtained between the experimental rate of reaction and conversion of crude ethanol, and the simulated results, with ADD% being ±0.46.

Preparation of iron sulphides by high energy ball milling

DEFF Research Database (Denmark)

Lin, R.; Jiang, Jianzhong; Larsen, R.K.

1998-01-01

The reaction of a powder mixture consisting of 50 a.% Fe and 50 a.% S during high energy ball milling has been studied by x-ray diffraction and Mossbauer spectroscopy. After around 19 h of milling FeS2 and FeS havebeen formed. By further milling the FeS compound becomes dominating and only Fe......S with an average crystallite size of about 10 nm was observed after milling times longer than 67 h. Mossbauer spectra obtained with applied fields show that the particles are antiferromagnetic or have a strongly canted spin structure....

Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

International Nuclear Information System (INIS)

Jian, Sh.R.; Juang, J.Y.

2012-01-01

The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nano indentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the 'pop-ins' phenomena during nano indentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nano indentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers

International Nuclear Information System (INIS)

Liu, Linjie; Xu, Dawei; Jin, Lei; Knoll, Lars; Wirths, Stephan; Nichau, Alexander; Buca, Dan; Mussler, Gregor; Holländer, Bernhard; Zhao, Qing-Tai; Mantl, Siegfried; Feng Di, Zeng; Zhang, Miao

2013-01-01

We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers on compressively strained Si 1−x Ge x substrates and their structural characteristics. The uniform Ni(Al) germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 °C with an optimized Al atomic content of 20 at. %. We find only two kinds of grains in the layer. Both grains show orthogonal relationship with modified B8 type phase. The growth plane is identified to be (10-10)-type plane. After germanosilicidation the strain in the rest Si 1−x Ge x layer is conserved, which provides a great advantage for device application

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Energy Technology Data Exchange (ETDEWEB)

Alden, D. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Guo, W.; Kaess, F.; Bryan, I.; Reddy, P.; Hernandez-Balderrama, Luis H.; Franke, A.; Collazo, R.; Sitar, Z. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kirste, R.; Mita, S. [Adroit Materials, Inc., 2054 Kildaire Farm Rd., Suite 205, Cary, North Carolina 27518 (United States); Troha, T.; Zgonik, M. [Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000 Ljubljana (Slovenia); Bagal, A.; Chang, C.-H. [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

2016-06-27

Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.

GaN growth on silane exposed AlN seed layers

Energy Technology Data Exchange (ETDEWEB)

Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

2008-07-01

The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural characterization of AlN films synthesized by pulsed laser deposition

International Nuclear Information System (INIS)

Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

2011-01-01

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

Neutron diffraction determination of atomic mean-square displacements in cubic compounds of Ni-Al and Ni-Al-Cu systems

International Nuclear Information System (INIS)

Khidirov, I.; Mukhtarova, N.N.

2002-01-01

The atomic mean-square displacements (AMSD) are some of important characteristics of the solid and can be the main information for determination of a number of other characteristics of substances. In the work AMSD is determined for a number of cubic compounds of Ni-Al, Ni-Al-Cu systems immediately from intensities of neutron diffraction maxima. It is shown by the offered method that in all NiAl x and NiAlCu x compounds with the CsCl - type structure AMSD are near each other and they are practically constant. Therefore it is possible to assume that within the homogeneity region of these compounds the interatomic bond forces are changed insignificantly

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Science.gov (United States)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

Science.gov (United States)

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

International Nuclear Information System (INIS)

Pellerin, O.; Barral, F. G.; Lions, C.; Novelli, L.; Beregi, J. P.; Sapoval, M.

2008-01-01

Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 ± 15 days (range, 6-722 days) through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.

Soft-chemical synthesis and catalytic activity of Ni-Al and Co-Al layered double hydroxides (LDHs intercalated with anions with different charge density

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Takahiro Takei

2014-09-01

Full Text Available Co-Al and Ni-Al layered double hydroxides (LDHs intercalated with three types of anionic molecules, dodecylsulfate (C12H25SO4−, DS, di-2-ethylsulfosuccinate ([COOC2H3EtBu]2C2H3SO3−, D2ES, and polytungstate (H2W12O4210−, HWO were prepared by means of ion-exchange and co-precipitation processes. With the use of DS and D2ES as intercalation agents, high crystallinity was maintained after intercalation into the LDHs. In the case of HWO, the intercalated LDHs could be obtained by ion-exchange as well as co-precipitation with a decline in the crystallinity; however, unreacted LDH was detected in the ion-exchange samples, and some unwanted phases such as hydroxide and pyrochlore were generated by the co-precipitation process. The maximum specific surface area and pore volume of the Ni-Al sample with intercalated HWO, prepared by the ion-exchange process were 74 m2/g and 0.174 mL/g, respectively. The occupancies of DS, D2ES, and HWO within the interlayer space were approximately 0.3–0.4, 0.5–0.6, and 0.1–0.2, respectively, in the Co-Al and Ni-Al LDHs. Analysis of the catalytic activity demonstrated that the DS-intercalated Ni-Al LDH sample exhibited relatively good catalytic activity for conversion of cyclohexanol to cyclohexanone.

Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

International Nuclear Information System (INIS)

Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

2011-01-01

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

Microstructural transformations and mechanical properties of cast NiAl bronze: Effects of fusion welding and friction stir processing

International Nuclear Information System (INIS)

Fuller, M.D.; Swaminathan, S.; Zhilyaev, A.P.; McNelley, T.R.

2007-01-01

A plate of as-cast NiAl bronze (NAB) material was sectioned from a large casting. A six-pass fusion weld overlay was placed in a machined groove; a portion of the weld reinforcement was removed by milling and a single friction stir processing (FSP) pass was conducted in a direction transverse to the axis of and over the weld overlay. A procedure was developed for machining of miniature tensile samples and the distributions of strength and ductility were evaluated for the fusion weld metal; for the stir zone (SZ) produced by the friction stir processing; and for a region wherein friction stir processing had taken place over the fusion weld. A region of low ductility in the heat affected zone (HAZ) of the fusion weld and in the thermomechanically affected zone (TMAZ) of friction stir processed material was attributed to partial reversion of an equilibrium lamellar eutectoid constituent upon local heating above ∼800 deg. C and formation of non-equilibrium transformation products upon subsequent cooling. The adverse effect on ductility is worse in the heat affected zone of the fusion weld than in the thermomechanically affected zone of friction stir processing due to the lower heat input of the latter process. The implications of this work to engineering applications of friction stir processing are discussed

Magnetic, structural and magnetocaloric properties of Ni-Si and Ni-Al thermoseeds for self-controlled hyperthermia.

Science.gov (United States)

Pandey, Sudip; Quetz, Abdiel; Aryal, Anil; Dubenko, Igor; Mazumdar, Dipanjan; Stadler, Shane; Ali, Naushad

2017-11-01

Self-controlled hyperthermia is a non-invasive technique used to kill or destroy cancer cells while preserving normal surrounding tissues. We have explored bulk magnetic Ni-Si and Ni-Al alloys as a potential thermoseeds. The structural, magnetic and magnetocaloric properties of the samples were investigated, including saturation magnetisation, Curie temperature (T C ), and magnetic and thermal hysteresis, using room temperature X-ray diffraction and magnetometry. The annealing time, temperature and the effects of homogenising the thermoseeds were studied to determine the functional hyperthermia applications. The bulk Ni-Si and Ni-Al binary alloys have Curie temperatures in the desired range, 316 K-319 K (43 °C-46 °C), which is suitable for magnetic hyperthermia applications. We have found that T C strictly follows a linear trend with doping concentration over a wide range of temperature. The magnetic ordering temperature and the magnetic properties can be controlled through substitution in these binary alloys.

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

International Nuclear Information System (INIS)

Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

2002-01-01

Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

Bulk-compositional changes of Ni2Al3 and NiAl3 during ion etching

International Nuclear Information System (INIS)

Chen Houwen; Wang Rong

2008-01-01

Bulk-compositional changes of Ni 2 Al 3 and NiAl 3 in a Ni-50 wt% Al alloy during ion etching have been investigated by transmission electron microscopy and energy dispersive X-ray spectroscopic analyses. After etching with 7, 5 and 3 keV Ar + ions for 15, 24 and 100 h nickel contents in both Ni 2 Al 3 and NiAl 3 exceeded greatly those in the initial compounds and increased with the decrement of the sputtering energy. After 100 h etching with 3 keV Ar + ions the compositions of these two compounds reached a similar value, about Ni 80-83 Al 12-15 Fe 3-4 Cr 1-2 (at%). A synergistic action of preferential sputtering, radiation-induced segregation and radiation-enhanced diffusion enables the altered-layers at the top and bottom of the film extend through the whole film. The bulk-compositional changes are proposed to occur in the unsteady-state sputtering regime of ion etching and caused by an insufficient supply of matter in a thin film

Formation of metacinnabar by milling of liquid mercury and elemental sulfur for long term mercury storage

International Nuclear Information System (INIS)

Lopez, F.A.; Lopez-Delgado, A.; Padilla, I.; Tayibi, H.; Alguacil, F.J.

2010-01-01

In this paper we present the results of the formation of black HgS (metacinnabar) from liquid mercury and elemental sulfur using the mechanical energy provided by a ball mill in different conditions. Metacinnabar formation was observed even after short milling times (15 min) and unreacted liquid mercury was no longer detected after 60 min of milling. The reaction mechanism was monitored with a scanning electron microscope. The impact and friction forces of milling on the Hg and S mixture resulted in the formation of metacinnabar by reducing the size of mercury drops, giving rise to microspheres, and lowering the surface tension to allow sulfur grains to become adhered at the reaction interface. After 60 min of milling, the metacinnabar formation reaction was observed to be more than 99.99% complete, yielding a Toxicity Characteristic Leaching Procedure value of 3.1 μg/L Hg. The reaction product thus complies with the limits of the most stringent Universal Treatment Standard requirements, which allow a maximum TCLP concentration of 25 μg/L.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

Science.gov (United States)

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Impact of the AlN seeding layer thickness on GaN orientation on high index Si-substrates

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Veit, Peter; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg (Germany). FNW/IEP/AHE

2010-07-01

Silicon is considered to be a reasonable alternative to substrates such as sapphire and SiC, because of its low price and availability in large diameters. Because of spontaneous and strain induced piezoelectric polarization field along the c-axis, leading to the separation of electrons and holes in quantum wells reducing the recombination efficiency, c-axis oriented GaN-based light emitters have a low efficiency, especially in the longer wavelength region. In order to reduce or eliminate these polarization effects, semi-polar or non-polar GaN-heterostructure is favored. In this work we investigated the growth of GaN applying a low temperature AlN seeding layer with various thicknesses. The impact of the AlN seeding layer on GaN orientation using different Si substrate orientations (e. g. (211), (711), (410), (100)+4.5 off) were investigated by x-ray diffraction measurements in Bragg-Brentano geometry and X-ray pole figure measurements. We found that the thickness of the AlN seeding layer plays a significant role in obtaining different GaN textures. Applying a about 4 nm AlN seeding layer we achieved a single crystalline GaN epilayer on Si (211) with a 18 tilted c-axis orientation. Some of the samples were characterized by scanning electron microscopy and transmission electron microscopy.

VOC Control in Kraft Mills; FINAL

International Nuclear Information System (INIS)

Zhu, J.Y.; Chai, X.-S.; Edwards, L.L.; Gu, Y.; Teja, A.S.; Kirkman, A.G.; Pfromm, P.H.; Rezac, M.E.

2001-01-01

The formation of volatile organic compounds (VOCs), such as methanol, in kraft mills has been an environmental concern. Methanol is soluble in water and can increase the biochemical oxygen demand. Furthermore, it can also be released into atmosphere at the process temperatures of kraft mill-streams. The Cluster Rule of the EPA now requires the control of the release of methanol in pulp and paper mills. This research program was conducted to develop a computer simulation tool for mills to predict VOC air emissions. To achieve the objective of the research program, much effort was made in the development of analytical techniques for the analysis of VOC and determination of vapor liquid partitioning coefficient of VOCs in kraft mill-streams using headspace gas chromatography. With the developed analytical tool, methanol formation in alkaline pulping was studied in laboratory to provide benchmark data of the amount of methanol formation in pulping in kraft mills and for the validation of VOC formation and vapor-liquid equilibrium submodels. Several millwide air and liquid samplings were conducted using the analytical tools developed to validate the simulation tool. The VOC predictive simulation model was developed based on the basic chemical engineering concepts, i.e., reaction kinetics, vapor liquid equilibrium, combined with computerized mass and energy balances. Four kraft mill case studies (a continuous digester, two brownstock washing lines, and a pre-evaporator system) are presented and compared with mill measurements. These case studies provide valuable, technical information for issues related to MACT I and MACT II compliance, such as condensate collection and Clean-Condensate-Alternatives (CCA)

High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

International Nuclear Information System (INIS)

Sall, Mamour

2013-01-01

Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

Fabrication of Ti-Ni-Cu shape memory alloy powders by ball milling method

International Nuclear Information System (INIS)

Kang, S.; Nam, T.

2001-01-01

Ti-Ni and Ti-Ni-Cu shape memory alloy powders have been fabricated by ball milling method, and then alloying behavior and transformation behavior were investigated by means of optical microscopy, electron microscopy, X-ray diffraction and differential scanning calorimetry. As milled Ti-Ni powders fabricated with milling time less than 20 hrs was a mixture of pure elemental Ti and Ni, and therefore it was unable to obtain alloy powders because the combustion reaction between Ti and Ni occurred during heat treatment. Since those fabricated with milling time more than 20 hrs was a mixture of Ti-rich and Ni-rich Ti-Ni solid solution, however, it was possible to obtain alloy powders without the combustion reaction during heat treatment. Clear exothermic and endothermic peaks appeared in the cooling and heating curves, respectively in DSC curves of 20 hrs and 30 hrs milled Ti-Ni powders. On the other hand, in DSC curves of 1 hr, 10 hrs, 50 hrs and 100 hrs, the thermal peaks were almost discernible. The most optimum ball milling time for fabricating Ti-Ni alloy powders was 30 hrs. Ti-40Ni-10Cu(at%) alloy powders were fabricated successfully by ball milling conditions with rotating speed of 100 rpm and milling time of 30 hrs. (author)

An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2013-01-01

Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

Structural stabilities and electronic properties of Mg28-nAln clusters: A first-principles study

Directory of Open Access Journals (Sweden)

Bao-Juan Lu

2017-09-01

Full Text Available In this paper, we have constructed the alloy configurations of Mg28-nAln by replacing atoms at various possible positions, starting from the stable structures of Mg28 and Al28 clusters. According to the symmetry of the cluster structure, the isomers of these initial structures have been screened with the congruence check, which would reduce computational hours and improve efficiency. Using the first-principles method, the structural evolution, mixing behavior and electronic properties of Mg28-nAln clusters are investigated for all compositions. We conclude that Al atoms prefer to reside in the central positions of Mg−Al clusters and Mg atoms tend to occupy the peripheral location. The negative mixing enthalpies imply the stabilities of these Mg-Al clusters and thus possible applications in catalysis and hydrogen storage materials. Among Mg28-nAln clusters, Mg24Al4, Mg21Al7, Mg14Al14, Mg26Al2 and Mg27Al1 present relatively high thermodynamic stabilities, and the electronic properties of these stable structures are discussed with the charge distributions around the Fermi level.

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Energy Technology Data Exchange (ETDEWEB)

Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

2014-09-01

Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

Growth dynamics of reactive-sputtering-deposited AlN films

International Nuclear Information System (INIS)

Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

2005-01-01

We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

International Nuclear Information System (INIS)

Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

2012-01-01

ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

Energy Technology Data Exchange (ETDEWEB)

Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

2012-05-15

ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

Synthesis of Randomly Substituted Anionic Cyclodextrins in Ball Milling

Directory of Open Access Journals (Sweden)

László Jicsinszky

2017-03-01

Full Text Available A number of influencing factors mean that the random substitution of cyclodextrins (CD in solution is difficult to reproduce. Reaction assembly in mechanochemistry reduces the number of these factors. However, lack of water can improve the reaction outcomes by minimizing the reagent’s hydrolysis. High-energy ball milling is an efficient, green and simple method for one-step reactions and usually reduces degradation and byproduct formation. Anionic CD derivatives have successfully been synthesized in the solid state, using a planetary ball mill. Comparison with solution reactions, the solvent-free conditions strongly reduced the reagent hydrolysis and resulted in products of higher degree of substitution (DS with more homogeneous DS distribution. The synthesis of anionic CD derivatives can be effectively performed under mechanochemical activation without significant changes to the substitution pattern but the DS distributions were considerably different from the products of solution syntheses.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

2016-01-01

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Luminescence dynamics in AlGaN with AlN content of 20%

KAUST Repository

Soltani, Sonia

2016-12-15

Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

Molecular dynamics simulations of the melting curve of NiAl alloy under pressure

OpenAIRE

Wenjin Zhang; Yufeng Peng; Zhongli Liu

2014-01-01

The melting curve of B2-NiAl alloy under pressure has been investigated using molecular dynamics technique and the embedded atom method (EAM) potential. The melting temperatures were determined with two approaches, the one-phase and the two-phase methods. The first one simulates a homogeneous melting, while the second one involves a heterogeneous melting of materials. Both approaches reduce the superheating effectively and their results are close to each other at the applied pressures. By fit...

Ni adsorption and Ni-Al LDH precipitation in a sandy aquifer: An experimental and mechanistic modeling study

NARCIS (Netherlands)

Regelink, I.C.; Temminghoff, E.J.M.

2011-01-01

Mining activities and industries have created nickel (Ni) contaminations in many parts of the world. The objective of this study is to increase our understanding of Ni adsorption and Nickel-Aluminium Layered Double Hydroxide (Ni-Al LDH) precipitation to reduce Ni mobility in a sandy soil aquifer. At

Study on influence of Surface roughness of Ni-Al2O3 nano composite coating and evaluation of wear characteristics

Science.gov (United States)

Raghavendra, C. R.; Basavarajappa, S.; Sogalad, Irappa

2018-02-01

Electrodeposition is one of the most technologically feasible and economically superior techniques for producing metallic coating. The advancement in the application of nano particles has grabbed the attention in all fields of engineering. In this present study an attempt has been made on the Ni-Al2O3nano particle composite coating on aluminium substrate by electrodeposition process. The aluminium surface requires a specific pre-treatment for better adherence of coating. In light of this a thin zinc layer is coated on the aluminium substrate by electroless process. In addition to this surface roughness is an important parameter for any coating method and material. In this work Ni-Al2O3 composite coating were successfully coated by varying the process parameters such as bath temperature, current density and particle loading. The experimentation was performed using central composite design based 20 trials of experiments. The effect of process parameters and surface roughness before and after coating is analyzed on wear rate and coating thickness. The results shown a better wear resistance of Ni-Al2O3 composite electrodeposited coating compared to Ni coating. The particle loading and interaction effect of current density with temperature has greater significant effect on wear rate. The surface roughness is significantly affected the wear behaviour and thickness of coating.

On the failure of NiAl bicrystals during laser-induced shock compression

International Nuclear Information System (INIS)

Loomis, Eric; Swift, Damian; Peralta, Pedro; McClellan, Ken

2005-01-01

Thin NiAl bicrystals 5 mm in diameter and 150-350 μm thick were tested under laser-induced shock compression to evaluate the material behavior and the effect of localized strain at the grain boundary on the failure of these specimens. Circular NiAl bicrystal samples with random misorientation were grown using a modified Czochralski technique and samples were prepared for shock compression at moderate pressures (<10 GPa). The observed crack patterns on the drive surface as well as the free surface were examined using optical microscopy. Transmission electron microscopy (TEM) of the drive surface as well as in the bulk of one grain was performed on recovered specimens following shock compression. This revealed that a nanocrystalline region with a grain size of 15-20 nm formed on a thin layer at the drive surface following the plasma expansion phase of the laser-induced shock. TEM in the bulk of one grain showed that plastic deformation occurred in a periodic fashion through propagation of dislocation clusters. Cracking on the free surface of the samples revealed a clear grain boundary affected zone (GBAZ) due to scattering of the shock wave and variations in wave speed across the inclined boundary. Damage tended to accumulate in the grain into which the elastic wave refracted. This damage accumulation corresponds well to the regions in which the transmitted waves impinged on the free surface as predicted by elastic scattering models

Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

Energy Technology Data Exchange (ETDEWEB)

Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

2008-05-01

MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

DEFF Research Database (Denmark)

Pécz, Béla; Tóth, Lajos; Barna, Árpád

2013-01-01

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

Research on the Treatment of Aluminum Alloy Chemical Milling Wastewater with Fenton Process

Science.gov (United States)

Zong-liang, Huang; Ru, Li; Peng, Luo; Jun-li, Gu

2018-03-01

The aluminum alloy chemical milling wastewater was treated by Fenton method. The effect of pH value, reaction time, rotational speed, H2O2 dosage, Fe2+ dosage and the molar ratio between H2O2 and Fe2+ on the COD removal rate of aluminum alloy chemical milling wastewater were investigated by single factor experiment and orthogonal experiment. The results showed that the optimum operating conditions for Fenton oxidation were as follows: the initial pH value was 3, the rotational speed was 250r/min, the molar ratio of H2O2 and Fe2+ was 8, the reaction time was 90 min. Under the optimum conditions, the removal rate of the wastewater’s COD is about 72.36%. In the reaction kinetics that aluminum alloy chemical milling wastewater was oxidized and degraded by Fenton method under the optimum conditions, the reaction sequence of the initial COD was 0.8204.

Investigation on electronic and magnetic properties of Mn2NiAl by ab initio calculations and Monte Carlo simulations

International Nuclear Information System (INIS)

Masrour, R.; Jabar, A.; Hlil, E.K.; Hamedoun, M.; Benyoussef, A.; Hourmatallah, A.; Rezzouk, A.; Bouslykhane, K.; Benzakour, N.

2017-01-01

Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the Mn 2 NiAl. Magnetic moment considered to lie along (001) axes are computed. Obtained data from ab initio calculations are used as input for Monte Carlo simulations to compute other magnetic parameters. Also, the magnetic properties of Mn 2 NiAl are studied using the Monte Carlo simulations. The variation of magnetization and magnetic susceptibility with the reduced temperature of Mn 2 NiAl are investigated. The transition temperature of this system is deduced for different values exchange interaction and crystal field. The thermal total magnetization has been obtained, and the magnetic hysteresis cycle is established. The total magnetic moment is superior to those obtained by the other method and is mainly determined by the antiparallel aligned Mn I , Mn II and Ni spin moments. The superparamagnetic phase is found at the neighborhood of transition temperature. - Highlights: • Ab initio calculations are used to study magnetic and electronic properties of Mn 2 NiX. • The transition temperature of Mn 2 NiX is established. • The magnetic hysteresis cycle of M n2 NiX (X = Al, Ga, In, Sn) is deduced. • The magnetic coercive field of Mn 2 NiX (X = Al, Ga, In, Sn) is given.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Review of the physical and mechanical properties and potential applications of the B2 compound NiAl: Unabridged version of a paper published in International materials review

Science.gov (United States)

Noebe, Ronald D.; Bowman, Randy R.; Nathal, Michael V.

1992-01-01

Considerable work has been performed on NiAl over the last three decades, with an extremely rapid growth in research on this intermetallic occurring in the last few years due to recent interest in this material for electronic and high temperature structural applications. However, many physical properties and the controlling fracture and deformation mechanisms over certain temperature regimes are still in question. Part of this problem lies in the incomplete characterization of many of the alloys previously investigated. Fragmentary data on processing conditions, chemistry, microstructure and the apparent difficulty in accurately measuring composition has made direct comparison between individual studies sometimes tenuous. Therefore, the purpose of this review is to summarize all available mechanical and pertinent physical properties on NiAl, stressing the most recent investigations, in an attempt to understand the behavior of NiAl and its alloys over a broad temperature range.

Formation of epitaxial Al 2O 3/NiAl(1 1 0) films: aluminium deposition

Science.gov (United States)

Lykhach, Y.; Moroz, V.; Yoshitake, M.

2005-02-01

Structure of epitaxial Al 2O 3 layers formed on NiAl(1 1 0) substrates has been studied by means of reflection high-energy electron diffraction (RHEED). The elucidated structure was compared to the model suggested for 0.5 nm-thick Al 2O 3 layers [K. Müller, H. Lindner, D.M. Zehner, G. Ownby, Verh. Dtsch. Phys. Ges. 25 (1990) 1130; R.M. Jaeger, H. Kuhlenbeck, H.J. Freund, Surf. Sci. 259 (1991) 235]. The stepwise growth of Al 2O 3 film, involving deposition and subsequent oxidation of aluminium onto epitaxial 0.5 nm-thick Al 2O 3 layers, has been investigated. Aluminium was deposited at room temperature, whereas its oxidation took place during annealing at 1070 K. The Al 2O 3 thickness was monitored by means of Auger electron spectroscopy (AES). It was found that Al 2O 3 layer follows the structure of 0.5 nm thick Al 2O 3 film, although a tilting of Al 2O 3(1 1 1) surface plane with respect to NiAl(1 1 0) surface appeared after Al deposition.

A first-principles study of the SCN− chemisorption on the surface of AlN, AlP, and BP nanotubes

International Nuclear Information System (INIS)

Soltani, Alireza; Taghartapeh, Mohammad Ramezani; Mighani, Hossein; Pahlevani, Amin Allah; Mashkoor, Reza

2012-01-01

Graphical abstract: Adsorption properties of SCN − on AlN, AlP, and BP nanotubes based on density functional theory. ▶ We demonstrate the most stable configurations (N-side) of SCN − on AlN, AlP, and BP nanotubes models. Highlights: ► The SCN − Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). ► The interaction of SCN − on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. ► The studies suggest that the adsorption energies of SCN − on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN − on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN − for the most stable formation on the AlPNT is about −318.16 kJ mol −1 , which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN − and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

Coordination of arsenic and nickel to aluminum and magnesium phases in uranium mill raffinate precipitates

International Nuclear Information System (INIS)

Robertson, Jared; Essilfie-Dughan, J.; Lin, J.; Hendry, M. Jim

2017-01-01

The Key Lake U mill uses a stepwise neutralization process (pH 4.0, 6.5, 9.5, and 10.5) to treat raffinate (acidic, metal-rich wastewater) prior to safely releasing effluent to the environment. This process generates a complex mixture of precipitates that are deposited to a tailings facility. In this study, the coordination environments of As and Ni with respect to Al-Mg phases precipitated in the presence and absence of Fe in mill-generated and synthetic precipitates were defined using bulk X-ray absorption spectroscopy complemented with bulk X-ray diffraction. In low pH (pH 4.0–4.6) samples, As(V) precipitates as ferric arsenate and adsorbs to AlOHSO_4 (an amorphous hydrobasaluminite-like phase) and ferrihydrite via bidentate-binuclear complexes. Nickel(II) predominantly adsorbs to amorphous Al(OH)_3 via edge-sharing bidentate-mononuclear complexes. In high pH (pH 9.5–9.9) samples, As(V) adsorbs to amorphous Al(OH)_3_, ferrihydrite, and MgAlFe-hydrotalcite (bidentate complex). Nickel(II) octahedra adsorb to amorphous Al(OH)_3 and likely form a Ni-Al layered double hydroxide (LDH) surface precipitate on MgAlFe-hydrotalcite via Al dissolution-precipitation. In the final solids (blended low and high pH precipitates) discharged at ∼ pH 10.5, As(V) adsorbs to amorphous Al(OH)_3_, ferrihydrite, and MgAlFe-hydrotalcite. Nickel(II) adsorbs to amorphous Al(OH)_3 and forms Ni-Al LDH surface precipitates on hydrotalcite. This study demonstrates that neutralization of chemically complex wastewater precipitates multiple phases capable of controlling dissolved As and Ni concentrations. Knowledge gained from this study will aid investigations in understanding the long-term fate of these potential contaminants in the environment and can be applied to other industries and environmental systems with similar conditions. - Highlights: • Adds to the current model of aqueous contaminant control in U tailings. • As(V) adsorbs to Al(OH)_3/hydrotalcite/ferrihydrite via

Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

Science.gov (United States)

Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

2017-04-01

Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

Energy Technology Data Exchange (ETDEWEB)

Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

2009-02-27

In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

Directory of Open Access Journals (Sweden)

G. C. R. Garcia

2008-06-01

Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

The effect of Ni-Al ratio on the properties of coprecipitated nickel-alumina catalysts with high nickel contents

NARCIS (Netherlands)

Lansink Rotgerink, H.G.J.; Bosch, H.; van Ommen, J.G.; Ross, J.R.H.

1986-01-01

A series of nickel-alumina catalysts with a Ni/Al ratio between 3 and 20 has been prepared by coprecipitation. The calcination and reduction of these samples have been studied by thermogravimetry and their structures after calcination and reduction at different temperatures has been examined by

Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

Directory of Open Access Journals (Sweden)

Lung-Chien Chen

2012-01-01

Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

International Nuclear Information System (INIS)

Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

2003-01-01

AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

International Nuclear Information System (INIS)

Zhang Yue-Fei; Wang Li; Wei Bin; Ji Yuan; Han Xiao-Dong; Zhang Ze; Heiderhoff, R.; Geinzer, A. K.; Balk, L. J.

2012-01-01

The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. (condensed matter: structural, mechanical, and thermal properties)

Reducibility mill scale industrial waste via coke breeze at 850-950ºC

Directory of Open Access Journals (Sweden)

Gaballah N.M.

2015-01-01

Full Text Available Mill scale is a very attractive industrial waste due to its elevated iron content (about = 69.33% Fe besides being suiTab. for direct recycling to the blast furnace via sintering plant. In this paper the characteristics of raw materials and the briquettes produced from this mill scale were studied by different methods of analyses. The produced briquettes were reduced with different amounts of coke breeze at varying temperatures, and the reduction kinetics was determined. The activation energy of this reaction ≈ 61.5 kJ/mole for reduction of mill scale with coke breeze in the form of briquettes with 2% molasses where the chemical reaction interface model is applicable.

Investigation on electronic and magnetic properties of Mn{sub 2}NiAl by ab initio calculations and Monte Carlo simulations

Energy Technology Data Exchange (ETDEWEB)

Masrour, R., E-mail: rachidmasrour@hotmail.com [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, PB 63 46000 Safi (Morocco); Jabar, A. [Laboratory of Materials, Processes, Environment and Quality, Cady Ayyed University, National School of Applied Sciences, PB 63 46000 Safi (Morocco); Hlil, E.K. [Institut Néel, CNRS, Université Grenoble Alpes, BP 166, F-38042 Grenoble cedex 9 (France); Hamedoun, M. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Benyoussef, A. [Institute of Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Hourmatallah, A. [Equipe de Physique du Solide, Laboratoire LIPI, Ecole Normale Supérieure, BP 5206, Bensouda, Fes (Morocco); Rezzouk, A.; Bouslykhane, K.; Benzakour, N. [Laboratoire de Physique du Solide, Université Sidi Mohammed Ben Abdellah, Faculté des sciences DharMahraz, BP 1796, Fes (Morocco)

2017-04-15

Self-consistent ab initio calculations, based on Density Functional Theory (DFT) approach and using Full potential Linear Augmented Plane Wave (FLAPW) method, are performed to investigate both electronic and magnetic properties of the Mn{sub 2}NiAl. Magnetic moment considered to lie along (001) axes are computed. Obtained data from ab initio calculations are used as input for Monte Carlo simulations to compute other magnetic parameters. Also, the magnetic properties of Mn{sub 2}NiAl are studied using the Monte Carlo simulations. The variation of magnetization and magnetic susceptibility with the reduced temperature of Mn{sub 2}NiAl are investigated. The transition temperature of this system is deduced for different values exchange interaction and crystal field. The thermal total magnetization has been obtained, and the magnetic hysteresis cycle is established. The total magnetic moment is superior to those obtained by the other method and is mainly determined by the antiparallel aligned Mn{sub I}, Mn{sub II} and Ni spin moments. The superparamagnetic phase is found at the neighborhood of transition temperature. - Highlights: • Ab initio calculations are used to study magnetic and electronic properties of Mn{sub 2}NiX. • The transition temperature of Mn{sub 2}NiX is established. • The magnetic hysteresis cycle of M{sub n2}NiX (X = Al, Ga, In, Sn) is deduced. • The magnetic coercive field of Mn{sub 2}NiX (X = Al, Ga, In, Sn) is given.

ac Conductivity of mixed spinel NiAl0.7Cr0.7Fe0.6O4

Indian Academy of Sciences (India)

Abstract. ac Conductivity measurements are carried out across the metal to insulator transition in NiAl0.7Cr0.7Fe0.6O4. The low frequency data is analyzed using Summerfield scaling theory for hopping conductivity. The exponent of the scaling behavior has significantly different values in the conducting and insulating ...

AlN powder synthesis via nitriding reaction of aluminum sub-chloride

Energy Technology Data Exchange (ETDEWEB)

Ohashi, T.; Nishida, T.; Sugiura, M. (Waseda Univ., Tokyo (Japan). Graduate School); Fuwa, A. (Waseda Univ., Tokyo (Japan))

1993-06-01

In order to obtain the pertinent properties of aluminium nitride in its sintered form, it is desirable to have powders of finer sizes with narrower size distribution and higher purity, thereby making the sintering processing easier and the final body denser. Instead of using sublimated aluminum tri-chloride vapor (AlCl3) as an aluminum source in the vapor phase nitriding reaction, the mixed aluminum chloride vapor consisted of aluminum tri-chloride, bi-chloride and mono-chloride are used in the reaction with ammonia at temperatures of 1000 and 1200K. The mixed chloride vapors are produced by reacting chlorine with molten aluminum at 1000 or 1200K under atmospheric pressure. The reaction of this mixed chloride vapor with ammonia is then experimentally investigated to study the aluminum nitride powder morphology. The aluminum nitride powders synthesized under various ammonia concentrations are characterized for size distribution, mean particle size and particle morphology. 24 refs., 8 figs., 2 tabs.

Microstructural characterization of dispersion-strengthened Cu-Ti-Al alloys obtained by reaction milling

International Nuclear Information System (INIS)

Espinoza, Rodrigo A.; Palma, Rodrigo H.; Sepulveda, Aquiles O.; Fuenzalida, Victor; Solorzano, Guillermo; Craievich, Aldo; Smith, David J.; Fujita, Takeshi; Lopez, Marta

2007-01-01

The microstructure, electrical conductivity and hot softening resistance of two alloys (G-10 and H-20), projected to attain Cu-2.5 vol.% TiC-2.5 vol.% Al 2 O 3 nominal composition, and prepared by reaction milling and hot extrusion, were studied. The alloys were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and several chemical analysis techniques. The first alloy, G-10, showed the formation of Al 2 O 3 nanodispersoids and the presence of particles from non-reacted raw materials (graphite, Ti and Al). A second alloy, H-20, was prepared employing different fabrication conditions. This alloy exhibited a homogeneous distribution of Al 2 O 3 and Ti-Al-Fe nanoparticles, with the microstructure being stable after annealing and hot compression tests. These nanoparticles acted as effective pinning sites for dislocation slip and grain growth. The room-temperature hardness of the H-20 consolidated material (330 HV) was approximately maintained after annealing for 1 h at 1173 K; the electrical conductivity was 60% IACS (International Annealing Copper Standard)

In-situ studies of the TGO growth stresses and the martensitic transformation in the B2 phase in commercial Pt-modified NiAl and NiCoCrAlY bond coat alloys

Energy Technology Data Exchange (ETDEWEB)

Hovis, D.; Hu, L.; Reddy, A.; Heuer, A.H. [Dept. of Materials Science and Engineering, Case Western Reserve Univ., Cleveland, OH (United States); Paulikas, A.P.; Veal, B.W. [Materials Science Div., Argonne National Lab., Argonne, IL (United States)

2007-12-15

Oxide growth stresses were measured in situ at 1100 C on commercial Pt-modified NiAl and NiCoCrAlY bond coat alloys using synchrotron X-rays. Measurements were taken on samples that had no preoxidation, as well as on samples that had experienced 24 one-hour thermal exposures at 1150 C, a condition known to induce rumpling in the Pt-modified NiAl alloy, but not in the NiCoCrAlY alloy. The NiCoCrAlY alloy showed continuous stress relaxation under all conditions, whereas the Pt-modified NiAl alloys would typically stabilize at a fixed (often non-zero) stress suggesting a higher creep strength in the 'Thermally Grown Oxide' on the latter alloy, though the precise behavior was dependent on initial surface preparation. The formation of martensite in the Pt-modified NiAl alloys was also observed upon cooling and occurred at temperatures below 200 C for all of the samples observed. Based on existing models, this M{sub s} temperature is too low to account for the rumpling observed in these alloys. (orig.)

Effect of mechanical alloying on FeCrC reinforced Ni alloys

Energy Technology Data Exchange (ETDEWEB)

Yilmaz, S. Osman [Univ. of Namik Kemal, Tekirdag (Turkey); Teker, Tanju [Adiyaman Univ. (Turkey). Dept. of Metallurgical and Materials Engineering; Demir, Fatih [Batman Univ. (Turkey)

2016-05-01

Mechanical alloying (MA) is a powder metallurgy processing technique involving cold welding, fracturing and rewelding of powder particles in a high-energy ball mill. In the present study, the intermetallic matrix composites (IMCs) of Ni-Al reinforced by M{sub 7}C{sub 3} were produced by powder metallurgical routes via solid state reaction of Ni, Al and M{sub 7}C{sub 3} particulates by mechanical alloying processes. Ni, Al and M{sub 7}C{sub 3} powders having 100 μm were mixed, mechanical alloyed and the compacts were combusted in a furnace. The mechanically alloyed (MAed) powders were investigated by X-ray diffraction (XRD), microhardness measurement, optic microscopy (OM), scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The presence of the carbides depressed the formation of unwanted NiAl intermetallic phases. The mechanical alloyed M{sub 7}C{sub 3} particles were unstable and decomposed partially within the matrix during alloying and sintering, and the morphology of the composites changed with the dissolution ratio of M{sub 7}C{sub 3} and sintering temperature.

A first-principles study of B2 NiAl alloyed with rare earth elements Pr, Pm, Sm, and Eu

Institute of Scientific and Technical Information of China (English)

He Jun-Qi; Wang You; Yan Mu-Fu; Pan Zhao-Yi; Guo Li-Xin

2013-01-01

The structural,elastic,and electronic properties of NiAl alloyed with rare earth elements Pr,Pm,Sm,and Eu are investigated by using density functional theory (DFT).The study suggests that Pr,Pm,Sm,and Eu all tend to be substituted for an Al site.Ni8Al7Pm possesses the largest ductility.Only the hardness and ductility of Ni8Al7Eu are enhanced simultaneously.The covalency strength of the Ni-Al bond in Ni8Al7Pm is higher than that in Ni8Al7Eu.The covalency strength of an Al-Al bond and that of a Ni-Ni bond in Ni8Al7Eu are higher than that in Ni8Al7Pm.The Ni-Pm bond and the Ni-Eu bond are covalent,and the covalency strength of the Ni-Pm bond is greater.The Al-Pm bond and the Al-Eu bond show great covalency strength and ionicity,respectively.

Substrate milling pretreatment as a key parameter for Solid-State Anaerobic Digestion optimization.

Science.gov (United States)

Motte, J-C; Escudié, R; Hamelin, J; Steyer, J-P; Bernet, N; Delgenes, J-P; Dumas, C

2014-12-01

The effect of milling pretreatment on performances of Solid-State Anaerobic Digestion (SS-AD) of raw lignocellulosic residue is still controverted. Three batch reactors treating different straw particle sizes (milled 0.25 mm, 1 mm and 10 mm) were followed during 62 days (6 sampling dates). Although a fine milling improves substrate accessibility and conversion rate (up to 30% compared to coarse milling), it also increases the risk of media acidification because of rapid and high acids production during fermentation of the substrate soluble fraction. Meanwhile, a gradual adaptation of microbial communities, were observed according to both reaction progress and methanogenic performances. The study concluded that particle size reduction affected strongly the performances of the reaction due to an increase of substrate bioaccessibility. An optimization of SS-AD processes thanks to particle size reduction could therefore be applied at farm or industrial scale only if a specific management of the soluble compounds is established. Copyright © 2014 Elsevier Ltd. All rights reserved.

Influence of metallic surface states on electron affinity of epitaxial AlN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

2017-06-15

The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

Influence of the milling process on the structure and morphology of ZnAl{sub 2}O{sub 4} and catalytic performance in the methyl transesterification reaction of soybean oil; Influencia do processo de moagem na estrutura e morfologia de ZnAl{sub 2}O{sub 4} e no desempenho catalitico na reacao de transesterificacao metilica do oleo de soja

Energy Technology Data Exchange (ETDEWEB)

Feitosa, A.C.; Dantas, B.B.; Santana, A.; Costa, A.C.M.F., E-mail: alexcaval2@hotmail.com [Universidade Federal de Campina Grande (UFCG), PB (Brazil). Unidade Academica de Engenharia de Materiais; Costa, D.B. [Universidade Federal de Alagoas (UFAL), Maceio, AL (Brazil). Departamento de Quimica

2012-07-01

This work aimed to evaluate the effect of milling time over the structure and morphology of ZnAl{sub 2}O{sub 4}, synthesized by combustion reaction, and study the effect of milled samples over the methyl transesterification reaction of soy bean oil. ZnAl{sub 2}O{sub 4} was synthesizing, by means combustion reaction, using a electrical resistance plate. The powder was milled over 15, 30, 45 and 60 minutes and the samples were characterized by X-ray diffraction, scanning electron micrograph, particle size distribution and N{sub 2} adsorption isotherms. Milling process promoted changes over the agglomerate size and textural characteristics of the samples. Catalytic tests were conducted at 160 deg C, with 1% of catalyst, with molar ratio oil:methanol of 1:6 and reaction time of 1 hour. According the results, the sample milled over 30 minutes showed the highest conversion. (author)

Effect of the milling conditions on the degree of amorphization of selenium by milling in a planetary ball mill

International Nuclear Information System (INIS)

Ksiazek, K; Wacke, S; Gorecki, T; Gorecki, Cz

2007-01-01

The effect of the milling parameters (rotation speed of the milling device and duration of milling) on the phase composition of the products of milling of fully crystalline selenium has been investigated. The milling was conducted using a planetary micromill and the phase composition of the milling products was determined by differential thermal analysis. It has been found that ball milling leads to the partial amorphization of the starting crystalline material. The content of amorphous phase in the milling products depends, in a rather complicated way, on the milling parameters. At the milling parameters adopted in the present study, the milling product was never fully amorphous. The complicated way the milling parameters affect the content of amorphous phase in the milling products is a result of competition of two processes: amorphization due to deformation and refinement of grains of milled material and crystallization of the already produced amorphous material at the cost of heat evolved in the milling vial during the milling process

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

Science.gov (United States)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Reliable Mechanochemistry: Protocols for Reproducible Outcomes of Neat and Liquid Assisted Ball-mill Grinding Experiments.

Science.gov (United States)

Belenguer, Ana M; Lampronti, Giulio I; Sanders, Jeremy K M

2018-01-23

The equilibrium outcomes of ball mill grinding can dramatically change as a function of even tiny variations in the experimental conditions such as the presence of very small amounts of added solvent. To reproducibly and accurately capture this sensitivity, the experimentalist needs to carefully consider every single factor that can affect the ball mill grinding reaction under investigation, from ensuring the grinding jars are clean and dry before use, to accurately adding the stoichiometry of the starting materials, to validating that the delivery of solvent volume is accurate, to ensuring that the interaction between the solvent and the powder is well understood and, if necessary, a specific soaking time is added to the procedure. Preliminary kinetic studies are essential to determine the necessary milling time to achieve equilibrium. Only then can exquisite phase composition curves be obtained as a function of the solvent concentration under ball mill liquid assisted grinding (LAG). By using strict and careful procedures analogous to the ones here presented, such milling equilibrium curves can be obtained for virtually all milling systems. The system we use to demonstrate these procedures is a disulfide exchange reaction starting from the equimolar mixture of two homodimers to obtain at equilibrium quantitative heterodimer. The latter is formed by ball mill grinding as two different polymorphs, Form A and Form B. The ratio R = [Form B] / ([Form A] + [Form B]) at milling equilibrium depends on the nature and concentration of the solvent in the milling jar.

Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

Science.gov (United States)

Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

2018-06-01

Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

International Nuclear Information System (INIS)

Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

Energy Technology Data Exchange (ETDEWEB)

Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

2011-01-01

AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

2015-01-01

Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

DLC and AlN thin films influence the thermal conduction of HPLED light

Science.gov (United States)

Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

2015-08-01

Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

International Nuclear Information System (INIS)

Lv, Yuanjie; Feng, Zhihong; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao

2014-01-01

The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

Energy Technology Data Exchange (ETDEWEB)

Penner, J

2007-12-20

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

Ab initio thermodynamic properties of stoichiometric phases in the Ni-Al system

International Nuclear Information System (INIS)

Arroyave, R.; Shin, D.; Liu, Z.-K.

2005-01-01

In this work the thermodynamic properties of Al, Ni, NiAl and Ni 3 Al were obtained through ab initio methods. Through the use of density functional theory within the generalized gradient approximation and projector augmented-wave (PAW) pseudopotentials, the 0 K energetics of the structures were calculated. The supercell method was used to calculate the vibrational contributions to the free energy. The contribution of electronic degrees of freedom to the total free energy was also included in the calculations. The resulting free energy was used to calculate the enthalpies and entropies of the structures investigated. The comparison with experimental data is satisfactory, and the calculations compare well with recent results using linear response theory

Uranium milling costs

International Nuclear Information System (INIS)

Coleman, R.B.

1980-01-01

Basic process flowsheets are reviewed for conventional milling of US ores. Capital costs are presented for various mill capacities for one of the basic processes. Operating costs are shown for various mill capacities for all of the basic process flowsheets. The number of mills using, or planning to use, a particular process is reviewed. A summary of the estimated average milling costs for all operating US mills is shown

Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

International Nuclear Information System (INIS)

Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

2006-01-01

The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots

ANALISIS STRUKTUR MIKRO LAPISAN BOND COAT NIAL THERMAL BARRIER COATING (TBC PADA PADUAN LOGAM BERBASIS CO

Directory of Open Access Journals (Sweden)

Toto Sudiro

2012-11-01

Full Text Available Kehandalan dan umur pakai sistem Thermal Barrier Coating (TBC ditentukan oleh kestabilan lapisan bond coat dan thermal grown oxide (TGO. Sehingga sangatlah penting untuk memahami mekanisme pembentukan dan degradasi lapisan ini. Pada makalah ini akan dibahas analisis struktur mikro lapisan bond coat NiAl yang dideposisikan pada substrat CoCrNi dengan menggunakan gabungan metoda electroplating dan pack-cementation. Pada makalah ini juga dibahas mekanisme pembentukan void disepanjang interface bond coat¬-substrat setelah tes oksidasi.

A study of the mechanism of microwave-assisted ball milling preparing ZnFe{sub 2}O{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yingzhe; Wu, Yujiao [College of materials and metallurgical engineering, Guizhou Institute of Technology, Guiyang 550003 (China); 2011 Collaborative Innovation Center of Guizhou Province, Guiyang 550003 (China); Qin, Qingdong [College of materials and metallurgical engineering, Guizhou Institute of Technology, Guiyang 550003 (China); Wang, Fuchun [College of materials and metallurgical engineering, Guizhou Institute of Technology, Guiyang 550003 (China); 2011 Collaborative Innovation Center of Guizhou Province, Guiyang 550003 (China); Chen, Ding [College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082 (China)

2016-07-01

In this paper, well dispersed ZnFe{sub 2}O{sub 4} nano-particles with high magnetization saturation of 82.23 emu/g were first synthesized by microwave assisted ball milling and then the influences of pre-treatments and microwave powers to the progress were studied. It was found that under the both function of crack effect induced by ball milling and rotary motion induced by microwave the synthesized ferrtie nano-particles were well dispersed that is much different from the powders synthesized by normal high energy ball milling. The pre-treatment of ball milling can only enhance the reaction rate in the first several hours but the pre-irradiation of microwave can enhance the hole reaction rate. Further more, it was also been found that with increasing the microwave power, the more raw materials will converted into zinc ferrite in the first 5 h. 5 h latter the microwave power of 720 W is high enough for the coupling effect of microwave and ball milling with stirrer rotation speed of 256 rpm. - Highlights: • ZnFe{sub 2}O{sub 4} with 82.23 emu/g were synthesized without heat treatment. • The produced powder dispersed very well without any dispersant. • The pre-treatment of microwave enhanced the reaction rate much. • The pre-treatment of ball milling enhance chemical rate at beginning.

The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

Science.gov (United States)

Kim, Hoe Joon; Jung, Soon In; Segovia-Fernandez, Jeronimo; Piazza, Gianluca

2018-05-01

This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f) noise in piezoelectric aluminum nitride (AlN) contour mode resonators (CMRs). Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt) along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED), which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients) of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

Electrochemical properties of the ball-milled LaMg10NiMn alloy with Ni powders

International Nuclear Information System (INIS)

Wang Yi; Wang Xin; Gao Xueping; Shen Panwen

2008-01-01

The electrochemical characteristics of the ball-milled LaMg 10 NiMn alloys with Ni powders were investigated. It was found that the ball-milled LaMg 10 NiMn + 150 wt.% Ni composite exhibited higher first discharge capacity and better cycle performance. By means of the analysis of electrochemical impedance spectra (EIS), it was shown that the existence of manganese in LaMg 10 NiMn alloy increased the electrocatalytic activity due to its catalytic effect, and destabilized metal hydrides, and so reduced the hydrogen diffusion resistance. These contributed to the higher discharge capacity of the ball-milled LaMg 10 NiMn-Ni composite. According to the analytical results of X-ray diffraction (XRD), EIS and steady-state polarization (SSP) experiments, the inhibition of metal corrosion is not the main reason for the better cycle performance. The main reason is that the electrochemical reaction resistance of the ball-milled LaMg 10 NiMn-Ni composite is always lower than that of the ball-milled LaMg 10 Ni 2 -Ni composite because the former one contains manganese, which is a catalyst for the electrode reaction

Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

2006-01-01

The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

Synthesis of the Mg2Ni alloy prepared by mechanical alloying using a high energy ball mill

International Nuclear Information System (INIS)

Iturbe G, J. L.; Lopez M, B. E.; Garcia N, M. R.

2010-01-01

Mg 2 Ni was synthesized by a solid state reaction from the constituent elemental powder mixtures via mechanical alloying. The mixture was ball milled for 10 h at room temperature in an argon atmosphere. The high energy ball mill used here was fabricated at ININ. A hardened steel vial and three steel balls of 12.7 mm in diameter were used for milling. The ball to powder weight ratio was 10:1. A small amount of powder was removed at regular intervals to monitor the structural changes. All the steps were performed in a little lucite glove box under argon gas, this glove box was also constructed in our Institute. The structural evolution during milling was characterized by X-ray diffraction and scanning electron microscopy techniques. The hydrogen reaction was carried out in a micro-reactor under controlled conditions of pressure and temperature. The hydrogen storage properties of mechanically milled powders were evaluated by using a thermogravimetric analysis system. Although homogeneous refining and alloying take place efficiently by repeated forging, the process time can be reduced to one fiftieth of the time necessary for conventional mechanical milling and attrition. (Author)

Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

International Nuclear Information System (INIS)

Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

2015-01-01

Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

Respiration and Heartbeat Measurement for Sleep Monitoring Using a Flexible AlN Piezoelectric Film Sensor

Directory of Open Access Journals (Sweden)

Nan BU

2009-11-01

Full Text Available Respiratory and heartbeat monitoring during sleep provides basic physiological information for diagnosis of sleep disorders. This paper proposes a new method for non-invasive and unconstrained measurement of respiration and heartbeat during sleep. A flexible piezoelectric film sensor made of aluminum nitride (AlN material is used for signal acquisition. The total thickness of this sensor is less than 40 μm; the thin thickness makes it imperceptible when integrated into a bed. In addition, the AlN film sensor has good sensitivity, so that pressure fluctuation due to respiration and heartbeat can be measured when a subject is lying on this sensor. The pressure fluctuation measured can be further separated into signals corresponding to respiration and heartbeat, respectively. In the proposed method, the signal separation is achieved using an algorithm based on empirical mode decomposition (EMD. From the experimental results, it was found that respiration and heartbeat signals can be successfully obtained with the proposed method.

Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

KAUST Repository

Singh, Shivkant

2018-05-17

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

KAUST Repository

Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2018-01-01

The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

Effect of AlN doping on the growth morphology of SiC

Energy Technology Data Exchange (ETDEWEB)

Singh, N.B.; Jones, E.; Berghmans, A.; Wagner, B.P.; Jelen, E.; McLaughlin, S.; Knuteson, D.J.; Fitelson, M.; King, M.; Kahler, D. [Northrop Grumman Corporation, ES-ATL, Linthicum, MD (United States)

2009-09-15

AlN doped SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 {mu}m range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in the nitrogen atmosphere. We observed that nucleation occurred in the form of discs and growth occurred in hexagonal geometry. The X-ray studies showed (001)orientation and full width of half maxima (FWHM) was less than 0.1 indicating good crystallinity. We also observed that film deposited on the carbon crucible had long needles with anisotropic growth very similar to that of pure AlN. Some of the needles grew up to sizes of 200{mu}m in length and 40 to 50 {mu}m in width. It is clear that annealing of SiC-AlN powder or high temperature physical vapor deposition produces similar crystal structure for producing AlN-SiC solid solution. SEM studies indicated that facetted hexagons grew on the top of each other and coarsened and merged to form cm size grains on the substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Transformation of Goethite to Hematite Nanocrystallines by High Energy Ball Milling

Directory of Open Access Journals (Sweden)

O. M. Lemine

2014-01-01

Full Text Available α-Fe2O3 nanocrystallines were prepared by direct transformation via high energy ball milling treatment for α-FeOOH powder. X-ray diffraction, Rietveld analysis, TEM, and vibrating sample magnetometer (VSM are used to characterize the samples obtained after several milling times. Phase identification using Rietveld analysis showed that the goethite is transformed to hematite nanocrystalline after 40 hours of milling. HRTEM confirm that the obtained phase is mostly a single-crystal structure. This result suggested that the mechanochemical reaction is an efficient way to prepare some iron oxides nanocrystallines from raw materials which are abundant in the nature. The mechanism of the formation of hematite is discussed in text.

Hydrophilic functionalized silicon nanoparticles produced by high energy ball milling

Science.gov (United States)

Hallmann, Steffen

The mechanochemical synthesis of functionalized silicon nanoparticles using High Energy Ball Milling (HEBM) is described. This method facilitates the fragmentation of mono crystalline silicon into the nanometer regime and the simultaneous surface functionalization of the formed particles. The surface functionalization is induced by the reaction of an organic liquid, such as alkynes and alkenes with reactive silicon sites. This method can be applied to form water soluble silicon nanoparticles by lipid mediated micelle formation and the milling in organic liquids containing molecules with bi-functional groups, such as allyl alcohol. Furthermore, nanometer sized, chloroalkyl functionalized particles can be synthesized by milling the silicon precursor in the presence of an o-chloroalkyne with either alkenes or alkynes as coreactants. This process allows tuning of the concentration of the exposed, alkyl linked chloro groups, simply by varying the relative amounts of the coreactant. The silicon nanoparticles that are formed serve as the starting point for a wide variety of chemical reactions, which may be used to alter the surface properties of the functionalized nanoparticles. Finally, the use of functionalized silicon particles for the production of superhydrophobic films is described. Here HEBM proves to be an efficient method to produce functionalized silicon particles, which can be deposited to form a stable coating exhibiting superhydrophobic properties. The hydrophobicity of the silicon film can be tuned by the milling time and thus the resulting surface roughness of the films.

Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

Energy Technology Data Exchange (ETDEWEB)

Hermann, Martin

2009-04-27

In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

Science.gov (United States)

Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

2018-04-01

This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Science.gov (United States)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Photon emission spectroscopy of NiAl(110) in the scanning tunneling microscope

International Nuclear Information System (INIS)

Nilius, N.; Ernst, N.; Freund, H.-J.; Johansson, P.

2000-01-01

Spectroscopic measurements have been carried out of the light emitted from the NiAl(110)/W tunnel junction of a scanning tunneling microscope. The data reveal two prominent emission lines in the visible and near-infrared region. Corresponding model calculations assign the observed light emission to the radiating decay of the tip-induced plasmon excited in the tip-sample cavity. In agreement with the theory, a low- and a high-energy mode of the plasmon can be distinguished in the experimental data. Since the excitation probability of the two modes is determined by the size of the tunnel cavity, it can be influenced by the radius of the tunnel tip. A blunted tip favors the observation conditions of the higher mode

Synthesis of the Mg{sub 2}Ni alloy prepared by mechanical alloying using a high energy ball mill

Energy Technology Data Exchange (ETDEWEB)

Iturbe G, J. L.; Lopez M, B. E. [ININ, Departamento de Quimica, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico); Garcia N, M. R., E-mail: joseluis.iturbe@inin.gob.m [UNAM, Facultad de Estudios Superiores Zaragoza, Batalla 5 de Mayo s/n, Esq. Fuerte de Loreto, Col. Ejercito de Oriente, 09230 Mexico D. F. (Mexico)

2010-07-01

Mg{sub 2}Ni was synthesized by a solid state reaction from the constituent elemental powder mixtures via mechanical alloying. The mixture was ball milled for 10 h at room temperature in an argon atmosphere. The high energy ball mill used here was fabricated at ININ. A hardened steel vial and three steel balls of 12.7 mm in diameter were used for milling. The ball to powder weight ratio was 10:1. A small amount of powder was removed at regular intervals to monitor the structural changes. All the steps were performed in a little lucite glove box under argon gas, this glove box was also constructed in our Institute. The structural evolution during milling was characterized by X-ray diffraction and scanning electron microscopy techniques. The hydrogen reaction was carried out in a micro-reactor under controlled conditions of pressure and temperature. The hydrogen storage properties of mechanically milled powders were evaluated by using a thermogravimetric analysis system. Although homogeneous refining and alloying take place efficiently by repeated forging, the process time can be reduced to one fiftieth of the time necessary for conventional mechanical milling and attrition. (Author)

The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

Directory of Open Access Journals (Sweden)

Hoe Joon Kim

2018-05-01

Full Text Available This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f noise in piezoelectric aluminum nitride (AlN contour mode resonators (CMRs. Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED, which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Science.gov (United States)

Ko, Tsung-Shine; Lin, Der-Yuh; Lin, Chia-Feng; Chang, Che-Wei; Zhang, Jin-Cheng; Tu, Shang-Ju

2017-04-01

In this paper, we experimentally studied the effect of AlN spacer layer on optical and electrical properties of AlGaN/GaN high electric mobility transistors (HEMTs) grown by metal organic chemical vapor deposition method. For AlGaN layer in HEMT structure, the Al composition of the sample was determined using x-ray diffraction and photoluminescence. Electrolyte electro-reflectance (EER) measurement not only confirmed the aluminum composition of AlGaN layer, but also determined the electric field strength on the AlGaN layer through the Franz-Keldysh oscillation phenomenon. This result indicated that the electric field on the AlGaN layer could be improved from 430 to 621 kV/cm when AlN spacer layer was inserted in HEMT structure, which increased the concentration of two dimensional electron gas (2DEG) and improve the mobility. The temperature dependent Hall results show that both the mobility and the carrier concentration of 2DEG would decrease abruptly causing HEMT loss of function due to phonon scattering and carrier thermal escape when temperature increases above a specific value. Meanwhile, our study also demonstrates using AlN spacer layer could be beneficial to allow the mobility and carrier density of 2DEG sustaining at high temperature region.

Effect of Surface Roughness and Structure Features on Tribological Properties of Electrodeposited Nanocrystalline Ni and Ni/Al2O3 Coatings

Science.gov (United States)

Góral, Anna; Lityńska-Dobrzyńska, Lidia; Kot, Marcin

2017-05-01

Metal matrix composite coatings obtained by electrodeposition are one of the ways of improving the surfaces of materials to enhance their durability and properties required in different applications. This paper presents an analysis of the surface topography, microstructure and properties (residual stresses, microhardness, wear resistance) of Ni/Al2O3 nanocomposite coatings electrodeposited on steel substrates from modified Watt's-type baths containing various concentrations of Al2O3 nanoparticles and a saccharin additive. The residual stresses measured in the Ni/Al2O3 coatings decreased with an increasing amount of the co-deposited ceramics. It was established that the addition of Al2O3 powder significantly improved the coatings' microhardness. The wear mechanism changed from adhesive-abrasive to abrasive with a rising amount of Al2O3 particles and coating microhardness. Nanocomposite coatings also exhibited a lower coefficient of friction than that of a pure Ni-electrodeposited coating. The friction was found to depend on the surface roughness, and the smoother surfaces gave lower friction coefficients.

Solid-state reactions during mechanical milling of Fe-Al under nitrogen atmosphere

Czech Academy of Sciences Publication Activity Database

Jirásková, Yvonna; Buršík, Jiří; Čížek, J.; Jančík, D.

2013-01-01

Roč. 568, AUG (2013), s. 106-111 ISSN 0925-8388 R&D Projects: GA ČR(CZ) GAP108/11/1350 Institutional support: RVO:68081723 Keywords : milling * mechanical alloying * Mössbauer phase analysis * Fe-Al alloy * microstructure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.726, year: 2013

Thermoluminescence properties of AlN ceramics

DEFF Research Database (Denmark)

Trinkler, L.; Christensen, P.; Agersnap Larsen, N.

1998-01-01

The paper describes thermoluminescence (TL) properties of AlN:Y2O3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y2O3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow...... curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al2O3:C. It is concluded that AlN:Y2O3 ceramics showing a radiation sensitivity...... which is approximately 50 times greater than that of LiF:Mg,Ti is an interesting dosimetry material; however due to a high fading rate of the TL of AlN:Y2O3 on storage at room temperature, a further development of the material for improving the fading characteristics is needed for its application...

Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix composites

Energy Technology Data Exchange (ETDEWEB)

Kollo, Lauri, E-mail: lauri.kollo@staff.ttu.e [Laboratory of Advanced Materials Processing, EMPA, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Department of Materials Engineering, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Leparoux, Marc; Bradbury, Christopher R.; Jaeggi, Christian [Laboratory of Advanced Materials Processing, EMPA, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Carreno-Morelli, Efrain; Rodriguez-Arbaizar, Mikel [University of Applied Sciences of Western Switzerland, Design and Materials Unit, 1950 Sion (Switzerland)

2010-01-21

High-energy planetary milling was used for mixing aluminium powders with 1 vol.% of silicon carbide (SiC) nanoparticles. A number of milling parameters were modified for constituting the relationship between the energy input from the balls and the hardness of the bulk nanocomposite materials. It was shown that mixing characteristics and reaction kinetics with stearic acid as process control agent can be estimated by normalised input energy from the milling bodies. For this, the additional parameter characterising the vial filling was determined experimentally. Depending on the ball size, a local minimum in filling parameter was found, laying at 25 or 42% filling of the vial volume for the balls with diameter of 10 and 20 mm, respectively. These regions should be avoided to achieve the highest milling efficiency.After a hot compaction, fourfold difference of hardness for different milling conditions was detected. Therewith the hardness of the Al-1 vol.% nanoSiC composite could be increased from 47 HV{sub 0.5} of pure aluminium to 163 HV{sub 0.5} when milling at the highest input energy levels.

Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Storm, D.F.; Katzer, D.S.; Binari, S.C.; Shanabrook, B.V.; Zhou Lin; Smith, David J.

2004-01-01

AlGaN/GaN high electron mobility transistor structures have been grown by plasma-assisted molecular beam epitaxy on semi-insulating 4H-SiC utilizing an AlN nucleation layer. The electron Hall mobility of these structures increases from 1050 cm 2 /V s to greater than 1450 cm 2 /V s when the Al/N flux ratio during the growth of the nucleation layer is increased from 0.90 to 1.07. Buffer leakage currents increase abruptly by nearly three orders of magnitude when the Al/N ratio increases from below to above unity. Transmission electron microscopy indicates that high buffer leakage is correlated with the presence of stacking faults in the nucleation layer and cubic phase GaN in the buffer, while low mobilities are correlated with high dislocation densities

Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

Energy Technology Data Exchange (ETDEWEB)

Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.; Hono, K. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Miura, Y. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Kyoto Institute of Technology, Electrical Engineering and Electronics, Kyoto 606-8585 (Japan)

2016-03-07

We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

Science.gov (United States)

Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

2012-01-01

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Effect of Solution Treatment on Precipitation Behaviors, Age Hardening Response and Creep Properties of Elektron21 Alloy Reinforced by AlN Nanoparticles.

Science.gov (United States)

Saboori, Abdollah; Padovano, Elisa; Pavese, Matteo; Dieringa, Hajo; Badini, Claudio

2017-12-02

In the present study, the solution and ageing treatments behavior of Mg-RE-Zr-Zn alloy (Elektron21) and its nano-AlN reinforced nanocomposites have been evaluated. The properties of the thermal-treated materials were investigated in terms of Vickers hardness, the area fraction of precipitates, microstructure and phase composition. The solution treatments were performed by treating at 520 °C, 550 °C and 580 °C in argon atmosphere. The outcomes show that the hardness of the solutionized alloys was slightly affected by the solution temperature. X-ray diffraction and image analysis revealed that the complete dissolution of precipitates was not possible, neither for Elektron21 (El21) nor for its AlN containing nanocomposites. The ageing treatment of El21 led to a significant improvement in hardness after 20 h, while for longer times, it progressively decreased. The effect of ageing on the hardness of El21-AlN composites was found to be much less than this effect on the hardness of the host alloy. Electron backscatter diffraction (EBSD) analysis of El21 and El21-1%AlN after solution treatment confirm the random orientation of grains with a typical texture of random distribution. The as-cast creep results showed that the incorporation of nanoparticles could effectively improve the creep properties, while the results after solution treatment at 520 °C for 12 h followed by ageing treatment at 200 °C for 20 h confirmed that the minimum creep rate of T6-El21 was almost equal to the as-cast El21-AlN.

Solvothermal synthesis of NiAl double hydroxide microspheres on a nickel foam-graphene as an electrode material for pseudo-capacitors

International Nuclear Information System (INIS)

Momodu, Damilola; Bello, Abdulhakeem; Dangbegnon, Julien; Barzeger, Farshad; Taghizadeh, Fatimeh; Fabiane, Mopeli; Manyala, Ncholu; Johnson, A. T. Charlie

2014-01-01

In this paper, we demonstrate excellent pseudo-capacitance behavior of nickel-aluminum double hydroxide microspheres (NiAl DHM) synthesized by a facile solvothermal technique using tertbutanol as a structure-directing agent on nickel foam-graphene (NF-G) current collector as compared to use of nickel foam current collector alone. The structure and surface morphology were studied by X-ray diffraction analysis, Raman spectroscopy and scanning and transmission electron microscopies respectively. NF-G current collector was fabricated by chemical vapor deposition followed by an ex situ coating method of NiAl DHM active material which forms a composite electrode. The pseudocapacitive performance of the composite electrode was investigated by cyclic voltammetry, constant charge–discharge and electrochemical impedance spectroscopy measurements. The composite electrode with the NF-G current collector exhibits an enhanced electrochemical performance due to the presence of the conductive graphene layer on the nickel foam and gives a specific capacitance of 1252 F g −1 at a current density of 1 A g −1 and a capacitive retention of about 97% after 1000 charge–discharge cycles. This shows that these composites are promising electrode materials for energy storage devices

Magma transport in sheet intrusions of the Alnö carbonatite complex, central Sweden.

Science.gov (United States)

Andersson, Magnus; Almqvist, Bjarne S G; Burchardt, Steffi; Troll, Valentin R; Malehmir, Alireza; Snowball, Ian; Kübler, Lutz

2016-06-10

Magma transport through the Earth's crust occurs dominantly via sheet intrusions, such as dykes and cone-sheets, and is fundamental to crustal evolution, volcanic eruptions and geochemical element cycling. However, reliable methods to reconstruct flow direction in solidified sheet intrusions have proved elusive. Anisotropy of magnetic susceptibility (AMS) in magmatic sheets is often interpreted as primary magma flow, but magnetic fabrics can be modified by post-emplacement processes, making interpretation of AMS data ambiguous. Here we present AMS data from cone-sheets in the Alnö carbonatite complex, central Sweden. We discuss six scenarios of syn- and post-emplacement processes that can modify AMS fabrics and offer a conceptual framework for systematic interpretation of magma movements in sheet intrusions. The AMS fabrics in the Alnö cone-sheets are dominantly oblate with magnetic foliations parallel to sheet orientations. These fabrics may result from primary lateral flow or from sheet closure at the terminal stage of magma transport. As the cone-sheets are discontinuous along their strike direction, sheet closure is the most probable process to explain the observed AMS fabrics. We argue that these fabrics may be common to cone-sheets and an integrated geology, petrology and AMS approach can be used to distinguish them from primary flow fabrics.

Puente Alnö – Suecia

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Editorial, Equipo

1974-07-01

Full Text Available This bridge that joins the island of Alnô with the peninsula near the port of Sundsvall In the north of Sweden is one of the many of prestressed concrete that have been constructed lately all over the world with the system of successive corbels. Until recently it was the longest bridge in the country and distinguishes itself by the elegance and slenderness of its longer arches and by the deep foundation system used to construct the four central bridge piers. It has been planned and constructed by Skanska Cementgjuteriet, a firm that is specializing in this type of structure.Este puente, que une la isla de Alno con la península, cerca del puerto de Sundsvall, en el norte de Suecia, es uno de los muchos de hormigón pretensado que se han construido últimamente en todo el mundo por el sistema de voladizos sucesivos. Hasta hace poco era el puente más largo del país y destaca por la elegancia y esbeltez de sus arcos más largos y por el sistema de cimentación profunda empleado para construir las cuatro pilas centrales. Ha sido proyectado y construido por Skanska Cementgjuteriet, empresa que se ha especializado en este tipo de estructura.

High temperature electron cyclotron resonance etching of GaN, InN, and AlN

International Nuclear Information System (INIS)

Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

1995-01-01

Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

Suppressing Heavy Metal Leaching through Ball Milling of Fly Ash

Directory of Open Access Journals (Sweden)

Zhiliang Chen

2016-07-01

Full Text Available Ball milling is investigated as a method of reducing the leaching concentration (often termed stablilization of heavy metals in municipal solid waste incineration (MSWI fly ash. Three heavy metals (Cu, Cr, Pb loose much of their solubility in leachate by treating fly ash in a planetary ball mill, in which collisions between balls and fly ash drive various physical processes, as well as chemical reactions. The efficiency of stabilization is evaluated by analysing heavy metals in the leachable fraction from treated fly ash. Ball milling reduces the leaching concentration of Cu, Cr, and Pb, and water washing effectively promotes stabilization efficiency by removing soluble salts. Size distribution and morphology of particles were analysed by laser particle diameter analysis and scanning electron microscopy. X-ray diffraction analysis reveals significant reduction of the crystallinity of fly ash by milling. Fly ash particles can be activated through this ball milling, leading to a significant decrease in particle size, a rise in its BET-surface, and turning basic crystals therein into amorphous structures. The dissolution rate of acid buffering materials present in activated particles is enhanced, resulting in a rising pH value of the leachate, reducing the leaching out of some heavy metals.

Integrated treatment of olive mill wastewater (OMW) by the combination of Fenton's reaction and anaerobic treatment

International Nuclear Information System (INIS)

El-Gohary, F.A.; Badawy, M.I.; El-Khateeb, M.A.; El-Kalliny, A.S.

2009-01-01

The use of an integrated treatment scheme consisting of wet hydrogen peroxide catalytic oxidation (WHPCO) followed by two-stage upflow anaerobic sludge blanket (UASB) reactor (10 l each) for the treatment of olive mill wastewater was the subject of this study. The diluted wastewater (1:1) was pre-treated using Fenton's reaction. Optimum operating conditions namely, pH, H 2 O 2 dose, Fe +2 , COD:H 2 O 2 ratio and Fe +2 :H 2 O 2 ratio were determined. The UASB reactor was fed continuously with the pre-treated wastewater. The hydraulic retention time was kept constant at 48 h (24 h for each stage). The conventional parameters such as COD, BOD, TOC, TKN, TP, TSS, oil and grease, and total phenols were determined. The concentrations of polyphenolic compounds in raw wastewater and effluents of each treatment step were measured using HPLC. The results indicated a good quality final effluent. Residual concentrations of individual organic compounds ranged from 0.432 mg l -1 for ρ-hydroxy-benzaldhyde to 3.273 mg l -1 for cinnamic acid

Comprehensive characterization of ball-milled powders simulating a tribofilm system

Energy Technology Data Exchange (ETDEWEB)

Häusler, I., E-mail: ines.haeusler@bam.de; Dörfel, I., E-mail: Ilona.doerfel@bam.de; Peplinski, B., E-mail: Burkhard.peplinski@bam.de; Dietrich, P.M., E-mail: Paul.dietrich@yahoo.de; Unger, W.E.S., E-mail: Wolfgang.Unger@bam.de; Österle, W., E-mail: Werner.Oesterle@bam.de

2016-01-15

A model system was used to simulate the properties of tribofilms which form during automotive braking. The model system was prepared by ball milling of a blend of 70 vol.% iron oxides, 15 vol.% molybdenum disulfide and 15 vol.% graphite. The resulting mixture was characterized by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and various transmission electron microscopic (TEM) methods, including energy dispersive X-ray spectroscopy (EDXS), high resolution investigations (HRTEM) with corresponding simulation of the HRTEM images, diffraction methods such as scanning nano-beam electron diffraction (SNBED) and selected area electron diffraction (SAED). It could be shown that the ball milling caused a reduction of the grain size of the initial components to the nanometer range. Sometimes even amorphization or partial break-down of the crystal structure was observed for MoS{sub 2} and graphite. Moreover, chemical reactions lead to a formation of surface coverings of the nanoparticles by amorphous material, molybdenum oxides, and iron sulfates as derived from XPS. - Highlights: • Ball milling of iron oxides, MoS{sub 2}, and graphite to simulate a tribofilm • Increasing coefficient of friction after ball milling of the model blend • Drastically change of the diffraction pattern of the powder mixture • TEM & XPS showed the components of the milled mixture and the process during milling. • MoS{sub 2} and graphite suffered a loss in translation symmetry or became amorphous.

Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

Directory of Open Access Journals (Sweden)

Seong Min Kim

2012-12-01

Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

Directory of Open Access Journals (Sweden)

Takeshi Aoki

2015-08-01

Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

Energy Technology Data Exchange (ETDEWEB)

Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2012-03-15

We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Directory of Open Access Journals (Sweden)

Weihuang Yang

2013-05-01

Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

International Nuclear Information System (INIS)

Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

2015-01-01

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown

Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

Energy Technology Data Exchange (ETDEWEB)

Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

2015-02-15

The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

Anomalous band-gap bowing of AlN1−xPx alloy

International Nuclear Information System (INIS)

Winiarski, M.J.; Polak, M.; Scharoch, P.

2013-01-01

Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

Uranium-mill appraisal program

International Nuclear Information System (INIS)

Everett, R.J.; Cain, C.L.

1982-08-01

The results of special team appraisals at NRC-licensed uranium mills in the period May to November 1981 are reported. Since the Three Mile Island accident, NRC management has instituted a program of special team appraisals of radiation protection programs at certain NRC-licensed facilities. These appraisals were designed to identify weaknesses and strengths in NRC-licensed programs, including those areas not covered by explicit regulatory requirements. The regulatory requirements related to occupational radiation protection and environmental monitoring at uranium mills have been extensively upgraded in the past few years. In addition, there was some NRC staff concern with respect to the effectiveness of NRC licensing and inspection programs. In response to this concern and to changes in mill requirements, the NRC staff recommended that team appraisals be conducted at mills to determine the adequacy of mill programs, the effectiveness of the new requirements, and mill management implementation of programs and requirements. This report describes the appraisal scope and methodology as well as summary findings and conclusions. Significant weaknesses identified during the mill appraisals are discussed as well as recommendations for improvements in uranium mill programs and mill licensing and inspection

The electro-oxidation of lignin in Sappi Saiccor dissolving pulp mill ...

African Journals Online (AJOL)

Log in or Register to get access to full text downloads. ... obtained from Sappi Saiccor (formerly South African Industrial Cellulose Corporation) dissolving pulp mill ... were identified in the electro-oxidised reaction mixtures using gas chromatography-mass spectrometry ... EMAIL FREE FULL TEXT EMAIL FREE FULL TEXT

Solvothermal one-step synthesis of Ni-Al layered double hydroxide/carbon nanotube/reduced graphene oxide sheet ternary nanocomposite with ultrahigh capacitance for supercapacitors.

Science.gov (United States)

Yang, Wanlu; Gao, Zan; Wang, Jun; Ma, Jing; Zhang, Milin; Liu, Lianhe

2013-06-26

A Ni-Al layered double hydroxide (LDH), mutil-wall carbon nanotube (CNT), and reduced graphene oxide sheet (GNS) ternary nanocomposite electrode material has been developed by a facile one-step ethanol solvothermal method. The obtained LDH/CNT/GNS composite displayed a three-dimensional (3D) architecture with flowerlike Ni-Al LDH/CNT nanocrystallites gradually self-assembled on GNS nanosheets. GNS was used as building blocks to construct 3D nanostructure, and the LDH/CNT nanoflowers in turn separated the two-dimensional (2D) GNS sheets, which preserved the high surface area of GNSs. Furthermore, the generated porous networks with a narrow pore size distribution in the LDH/CNT/GNS composite were also demonstrated by the N2 adsorption/desorption experiment. Such morphology would be favorable to improve the mass transfer and electrochemical action of the electrode. As supercapacitor electrode material, the LDH/CNT/GNS hybrid exhibited excellent electrochemical performance, including ultrahigh specific capacitance (1562 F/g at 5 mA/cm(2)), excellent rate capability, and long-term cycling performance, which could be a promising energy storage/conversion material for supercapacitor application.

In situ neutron diffraction study of the plastic deformation mechanisms of B2 ordered intermetallic alloys: NiAl, CuZn, and CeAg

Energy Technology Data Exchange (ETDEWEB)

Wollmershauser, J.A. [Department of Materials Science and Engineering, University of Virginia, P.O. Box 400745, 116 Engineer' s Way, Charlottesville, VA 22904-04745 (United States); Kabra, S. [Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Agnew, S.R. [Department of Materials Science and Engineering, University of Virginia, P.O. Box 400745, 116 Engineer' s Way, Charlottesville, VA 22904-04745 (United States)], E-mail: sra4p@virginia.edu

2009-01-15

The internal stress developments of B2 compounds NiAl, CuZn, and CeAg are examined using in situ neutron diffraction. CeAg is a representative of a newly discovered class of fully ordered and ductile B2 compounds. Using polycrystal plasticity modeling to interpret the results, it is revealed that the internal stress evolution of CeAg is nearly identical to that of NiAl, indicating that they share a common primary mechanism of plastic deformation, i.e., <1 0 0>{l_brace}0 1 1{r_brace} 'cube' slip. This result reinforces the dilemma previously observed for rare-earth alloys CuY, AgY, and CuDy, since cube slip provides insufficient independent slip systems to accommodate large-scale homogenous polycrystalline deformation. There is no evidence in the diffraction data of either mechanical twinning or stress-induced phase transformation. The activity of bcc-type <1 1 1>{l_brace}11-bar0{r_brace} slip at high stresses is confirmed and a lower bound for the critical resolved shear stress is quantified.

Development and characterization of nickel catalysts supported in CeO2-ZrO2-Al2O3, CeO2-La2O3-Al2O3 e ZrO2-La2O3-Al2O3 matrixes evaluated for methane reforming reactions

International Nuclear Information System (INIS)

Abreu, Amanda Jordão de

2012-01-01

Nowadays, the methane reforming is large interest industrial for the take advantage of these gas in production the hydrogen and synthesis gas (syngas). Among in the reactions of methane stand of the reactions steam reforming and carbon dioxide reforming of methane. The main catalysts uses in the methane reforming is Ni/Al 2 O 3 . However, the supported-nickel catalyst is susceptible to the deactivation or the destruction by coke deposition. The carbon dissolves in the nickel crystallite and its diffuses through the nickel, leading for formation of the carbon whiskers, which results in fragmentation of the catalyst. Modification of such catalysts, like incorporation of suitable promoters, is desirable to achieve reduction of the methane hydrogenolysis and/or promotion of the carbon gasification. Catalysts 5%Ni/Al 2 O 3 supported on solid solutions formed by ZrO 2 -CeO 2 , La 2 O 3 and CeO 2 -ZrO 2 -La 2 O 3 were prepared, characterized and evaluated in reactions steam and carbon dioxide reforming and partial oxidation of methane with objective the value effect loading solution solid in support. The supports were prepared by co-precipitation method and catalysts were prepared by impregnation method and calcined at 500 deg C. The supports and catalysts were characterized by Nitrogen Adsorption, method -rays diffraction (XRD), X-rays dispersive spectroscopy (XDS), spectroscopy in the region of the ultraviolet and the visible (UV-vis NIR) to and temperature programmed reduction (TPR), Raman Spectroscopy, X-ray absorption spectroscopy and Thermogravimetric Analysis. After all the catalytic reactions check which the addition of solid solution is beneficial for Ni/Al 2 O 3 catalysts and the best catalysts are Ni/CeO 2 -La 2 O 3 -Al 2 O 3 . (author)

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

International Nuclear Information System (INIS)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette

2012-01-01

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure. A sheet resistance as low as 327 Ω/□ with a sheet carrier density of 1.5 x 10 13 cm -2 has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures

Energy Technology Data Exchange (ETDEWEB)

Gamarra, Piero; Lacam, Cedric; Magis, Michelle; Tordjman, Maurice; Di Forte Poisson, Marie-Antoinette [III-V Lab., Marcussis (France)

2012-01-15

During the past few years it has been reported that a thin AlN spacer of few nanometers needs to be inserted in InAlN/GaN high electron mobility transistors (HEMTs) to obtain high 2DEG carrier mobility. This work presents a systematic study of the effects of varying the ammonia flow in the AlN spacer of InAlN/AlN/GaN HEMTs grown by low pressure metalorganic vapour phase epitaxy (LP-MOVPE). The strain state, the surface roughness and the growth rate of AlN were found to be dependent on the V/III ratio. In addition the ammonia flow in the interlayer has a strong impact on the structural properties of the subsequent InAlN barrier layer and on the electrical properties of the structure.istance as low as 327 {omega}/{open_square} with a sheet carrier density of 1.5 x 10{sup 13} cm{sup -2} has been obtained at room temperature. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Facile synthesis and characterisation of AlNs using Protein Rich Solution extracted from sewage sludge and its application for ultrasonic assisted dye adsorption: Isotherms, kinetics, mechanism and RSM design.

Science.gov (United States)

Mary Ealias, Anu; Saravanakumar, M P

2018-01-15

Protein Rich Solution (PRS) was prepared from the sewage sludge with ultrasonic assistance. With PRS, aluminium based nanosheet like materials (AlNs) were synthesised for the ultrasonic removal of Congo Red (CR) and Crystal Violet (CV) dyes. PRS was characterised by UV, EEM and NMR spectral analysis. AlNs were characterised by FTIR, XRD, TGA, BET, SEM, AFM, TEM and XPS analysis. The point of zero charge of AlNs was found to be 5.4. The BET analysis ensured that the average pore diameter and total pore volume of AlNs as 8.464 nm and 0.11417 cc/g respectively. The efficacy of AlNs for the removal of toxic dyes was tested by performing Response surface methodology (RSM) designed experiments. The effect of sonication time, dosage and initial concentration on dye removal was studied at an optimised pH value. Langmuir, Freundlich and Temkin isotherm models were examined. The maximum adsorption capacity was found to be 121.951 and 105.263 mg/g for CR and CV respectively. The kinetic models like pseudo-first order, pseudo-second order, Elovich and intra-particle diffusion were examined to understand the mechanism behind it. The results revealed that the use of ultrasonication enhanced the mass transfer. The experimental studies on the influence of ultrasound power indicated a positive relation with the removal efficiency. The results of thermodynamic study revealed that the process was spontaneous and exothermic for both the dyes. The increase in ionic strength increased the removal efficiency for both CR and CV. RSM predicted the optimum adsorbent dosages as 0.16 g for 50 mg/L of CR and 0.12 g for 100 mg/L of CV dye solutions. The values of half-life and fractional adsorption for both CR and CV suggested that the low cost AlNs has high potential to remove the toxic industrial dyes. Copyright © 2017 Elsevier Ltd. All rights reserved.

Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Science.gov (United States)

Ganz, P. R.; Schaadt, D. M.

2011-12-01

Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

In situ synthesis of NiAl–NbB2 composite powder through combustion synthesis

International Nuclear Information System (INIS)

Shokati, Ali Akbar; Parvin, Nader; Sabzianpour, Naser; Shokati, Mohammad; Hemmati, Ali

2013-01-01

Highlights: ► A Novel NiAl matrix composite powder with 0–40 wt.% NbB 2 was synthesized. ► Composite powders were synthesized by thermal explosion reaction of Ni–Al–Nb–B system. ► Microhardness of NiAl considerably increased with raising NbB 2 content. ► Synthesized composite powders is a good candidate as precursor for thermal barrier application. - Abstract: Synthesis of a novel NiAl matrix composite powder reinforced with 0–40 wt.% NbB 2 by combustion synthesis in thermal explosion mode was investigated. The elemental powders of Ni, Al, Nb, and amorphous boron were used as starting material. For all compositions final products consisted of only the NiAl and NbB 2 phases. Coarser NbB 2 with a relatively uniform distribution in NiAl matrix was formed with rising NbB 2 content. Microhardness of NiAl considerably increased from 377 ± 13 HV 0.05 to 866 ± 81 HV 0.05 for NiAl with 40 wt.% NbB 2 . High microhardness, proper size and distribution of NbB 2 in NiAl matrix make it a good candidate as precursor for thermal spray application.

Mechanochemical synthesis of Co and Ni decorated with chemically deposited Pt as electrocatalysts for oxygen reduction reaction

International Nuclear Information System (INIS)

Flores-Rojas, E.; Cabañas-Moreno, J.G.; Pérez-Robles, J.F.; Solorza-Feria, O.

2016-01-01

High energy milling in combination with galvanic displacement were used for the preparation of bimetallic nanocatalysts. Co and Ni monometallic powders milled for 30 and 20 h, respectively were both produced in air atmosphere and used as precursors for the preparation of M-Pt (M = Co,Ni) compounds. Nanosized monometallic powders were physically supported on Vulcan carbon, and covered with 20 wt%Pt through a Galvanic Displacement Reaction (GDR) to produce Co-20Pt/C and Ni-20Pt/C electrocatalysts. XRD was used for phase identification on milled powders and for demonstrating structural transformations of Co powders during milling. Results on unmilled metallic Co powder show a predominant HCP structure modifying to a FCC structure after milling. Ni powders maintain their same FCC structure. Energy Dispersive X-Ray Spectometry (EDX) was used for chemical composition analysis on milled powders at several milling times. Scanning Transmission Electron Microscopy (STEM) show the formation of heterogeneous particle with ∼10 nm in size for both electrocatalysts. The electrocatalytic activity was evaluated by Cyclic Voltammetry (CV) and steady state Rotating Disk Electrode (RDE) for the Oxygen Reduction Reaction (ORR) in 0.1 M HClO_4. The kinetic parameters on Co-20Pt/C conducted to the highest mass activity for the cathodic reaction. - Highlights: • Monometallic powders of Co, and Ni were used as precursors for the preparation of M-Pt (M = Co,Ni) electrocatalysts. • Nanosized monometallic powders were decorated with Pt by a Galvanic Displacement Reaction. • The kinetic parameters on Co-20Pt/C conducted to the highest mass activity for the ORR reaction.

Mechanochemical synthesis of Co and Ni decorated with chemically deposited Pt as electrocatalysts for oxygen reduction reaction

Energy Technology Data Exchange (ETDEWEB)

Flores-Rojas, E.; Cabañas-Moreno, J.G. [Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, Col. Zacatenco, 07360 Mexico City (Mexico); Pérez-Robles, J.F. [Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, Col. Zacatenco, 07360 Mexico City (Mexico); Dpto. Ciencia de los Materiales, CINVESTAV-IPN Unidad Queretaro, Libramiento Norponiente No. 2000 Fracc. Real de Juriquilla, 76230, Queretaro (Mexico); Solorza-Feria, O., E-mail: osolorza@cinvestav.mx [Programa de Nanociencias y Nanotecnología, Centro de Investigación y de Estudios Avanzados, CINVESTAV-IPN, Av. Instituto Politécnico Nacional 2508, Col. Zacatenco, 07360 Mexico City (Mexico); Depto. Química, CINVESTAV-IPN, 07360, México City (Mexico)

2016-11-01

High energy milling in combination with galvanic displacement were used for the preparation of bimetallic nanocatalysts. Co and Ni monometallic powders milled for 30 and 20 h, respectively were both produced in air atmosphere and used as precursors for the preparation of M-Pt (M = Co,Ni) compounds. Nanosized monometallic powders were physically supported on Vulcan carbon, and covered with 20 wt%Pt through a Galvanic Displacement Reaction (GDR) to produce Co-20Pt/C and Ni-20Pt/C electrocatalysts. XRD was used for phase identification on milled powders and for demonstrating structural transformations of Co powders during milling. Results on unmilled metallic Co powder show a predominant HCP structure modifying to a FCC structure after milling. Ni powders maintain their same FCC structure. Energy Dispersive X-Ray Spectometry (EDX) was used for chemical composition analysis on milled powders at several milling times. Scanning Transmission Electron Microscopy (STEM) show the formation of heterogeneous particle with ∼10 nm in size for both electrocatalysts. The electrocatalytic activity was evaluated by Cyclic Voltammetry (CV) and steady state Rotating Disk Electrode (RDE) for the Oxygen Reduction Reaction (ORR) in 0.1 M HClO{sub 4}. The kinetic parameters on Co-20Pt/C conducted to the highest mass activity for the cathodic reaction. - Highlights: • Monometallic powders of Co, and Ni were used as precursors for the preparation of M-Pt (M = Co,Ni) electrocatalysts. • Nanosized monometallic powders were decorated with Pt by a Galvanic Displacement Reaction. • The kinetic parameters on Co-20Pt/C conducted to the highest mass activity for the ORR reaction.

Integration of micro milling highspeed spindle on a microEDM-milling machine set-up

DEFF Research Database (Denmark)

De Grave, Arnaud; Hansen, Hans Nørgaard; Andolfatto, Loic

2009-01-01

In order to cope with repositioning errors and to combine the fast removal rate of micro milling with the precision and small feature size achievable with micro EDM milling, a hybrid micro-milling and micro-EDM milling centre was built and tested. The aim was to build an affordable set-up, easy...... by micro milling. Examples of test parts are shown and used as an experimental validation....

Uranium Mill Tailings Management

International Nuclear Information System (INIS)

Nelson, J.D.

1982-01-01

This book presents the papers given at the Fifth Symposium on Uranium Mill Tailings Management. Advances made with regard to uranium mill tailings management, environmental effects, regulations, and reclamation are reviewed. Topics considered include tailings management and design (e.g., the Uranium Mill Tailings Remedial Action Project, environmental standards for uranium mill tailings disposal), surface stabilization (e.g., the long-term stability of tailings, long-term rock durability), radiological aspects (e.g. the radioactive composition of airborne particulates), contaminant migration (e.g., chemical transport beneath a uranium mill tailings pile, the interaction of acidic leachate with soils), radon control and covers (e.g., radon emanation characteristics, designing surface covers for inactive uranium mill tailings), and seepage and liners (e.g., hydrologic observations, liner requirements)

Preliminary Test of Upgraded Conventional Milling Machine into PC Based CNC Milling Machine

International Nuclear Information System (INIS)

Abdul Hafid

2008-01-01

CNC (Computerized Numerical Control) milling machine yields a challenge to make an innovation in the field of machining. With an action job is machining quality equivalent to CNC milling machine, the conventional milling machine ability was improved to be based on PC CNC milling machine. Mechanically and instrumentally change. As a control replacing was conducted by servo drive and proximity were used. Computer programme was constructed to give instruction into milling machine. The program structure of consists GUI model and ladder diagram. Program was put on programming systems called RTX software. The result of up-grade is computer programming and CNC instruction job. The result was beginning step and it will be continued in next time. With upgrading ability milling machine becomes user can be done safe and optimal from accident risk. By improving performance of milling machine, the user will be more working optimal and safely against accident risk. (author)

Non-isothermal decomposition kinetics, heat capacity and thermal safety of 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture

International Nuclear Information System (INIS)

Zhang, Jiao-Qiang; Gao, Hong-Xu; Ji, Tie-Zheng; Xu, Kang-Zhen; Hu, Rong-Zu

2011-01-01

Highlights: → Non-isothermal decomposition kinetics, heat capacity and thermal safety on 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture. → Apparent activation energy and pre-exponential constant obtained. → Thermal explosion temperature, adiabatic time-to-explosion, 50% drop height of impact sensitivity, and critical temperature of hot-spot initiation calculated. - Abstract: The specific heat capacity (C p ) of 37.2/44/16/2.2/0.2/0.4-GAP/CL-20/Al/N-100/PCA/auxiliaries mixture was determined with the continuous C p mode of microcalorimeter. The equation of C p with temperature was obtained. The standard molar heat capacity of GAP/CL-20/Al/N-100/PCA/auxiliaries mixture was 1.225 J mol -1 K -1 at 298.15 K. With the help of the peak temperature (T p ) from the non-isothermal DTG curves of the mixture at different heating rates (β), the apparent activation energy (E k and E o ) and pre-exponential constant (A K ) of thermal decomposition reaction obtained by Kissinger's method and Ozawa's method. Using density (ρ) and thermal conductivity (λ), the decomposition heat (Q d , taking half-explosion heat), Zhang-Hu-Xie-Li's formula, the values (T e0 and T p0 ) of T e and T p corresponding to β → 0, thermal explosion temperature (T be and T bp ), adiabatic time-to-explosion (t TIad ), 50% drop height (H 50 ) of impact sensitivity, and critical temperature of hot-spot initiation (T cr,hotspot ) of thermal explosion of the mixture were calculated. The following results of evaluating the thermal safety of the mixture were obtained: T be = 441.64 K, T bp = 461.66 K, t Tlad = 78.0 s (n = 2), t Tlad = 74.87s (n = 1), t Tlad = 71.85 s (n = 0), H 50 = 21.33 cm.

Tertiary treatment of pulp mill wastewater by solar photo-Fenton

International Nuclear Information System (INIS)

Lucas, Marco S.; Peres, José A.; Amor, Carlos; Prieto-Rodríguez, Lucía; Maldonado, Manuel I.; Malato, Sixto

2012-01-01

Highlights: ► We firstly report a real pulp mill wastewater treatment by solar photo-Fenton in a CPC reactor. Fenton reagent experiments were tested firstly. ► Solar photo-Fenton presents excellent ability to treat the pulp mill wastewater. ► Experimental conditions were optimised. ► Biodegradability and toxicity tests (respirometry assays and BOD 5 /COD ratio) were performed during the wastewater treatment. ► A way to reduce the economic and environmental impact was evaluated. - Abstract: This work reports on pulp mill wastewater (PMW) tertiary treatment by Fenton (Fe 2+ /H 2 O 2 ) and solar photo-Fenton (Fe 2+ /H 2 O 2 /UV) processes in a pilot plant based on compound parabolic collectors (CPCs). Solar photo-Fenton reaction is much more efficient than the respective dark reaction under identical experimental conditions. It leads to DOC mineralisation, COD and total polyphenols (TP) removal higher than 90%. The solar photo-Fenton experiment with 5 mg Fe L −1 reaches 90% of DOC mineralisation with 31 kJ L −1 of UV energy and 50 mM of H 2 O 2 . The initial non-biodegradability of PMW, as shown by respirometry assays and BOD 5 /COD ratio, can be changed after a solar photo-Fenton treatment. Experiments with 20 and 50 mg Fe L −1 revealed that solar photo-Fenton can reach the same DOC degradation (90%), however, consuming less H 2 O 2 and time. Diluting the initial organic load to 50% also diminishes the dosage of H 2 O 2 and the necessary reaction time to achieve high DOC removals. Accordingly, solar photo-Fenton can be considered an alternative or complementary process to improve the performance of a biologic treatment and, subsequently, achieve legal limits on discharge into natural waters.

Local lattice environment of indium in GaN, AlN, and InN

International Nuclear Information System (INIS)

Penner, J.

2007-01-01

After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

1996-01-01

The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

Effects of Dry-Milling and Wet-Milling on Chemical, Physical and Gelatinization Properties of Rice Flour

Directory of Open Access Journals (Sweden)

Jitranut Leewatchararongjaroen

2016-09-01

Full Text Available Rice flour from nine varieties, subjected to dry- and wet-milling processes, was determined for its physical and chemical properties. The results revealed that milling method had an effect on properties of flour. Wet-milling process resulted in flour with significantly lower protein and ash contents and higher carbohydrate content. Wet-milled flour also tended to have lower lipid content and higher amylose content. In addition, wet-milled rice flour contained granules with smaller average size compared to dry-milled samples. Swelling power at 90 °C of wet-milled samples was higher while solubility was significantly lower than those of dry-milled flour. Dry milling process caused the destruction of the crystalline structure and yielded flour with lower crystallinity compared to wet-milling process, which resulted in significantly lower gelatinization enthalpy.

Investigation of the milling capabilities of the F10 Fine Grind mill using Box-Behnken designs.

Science.gov (United States)

Tan, Bernice Mei Jin; Tay, Justin Yong Soon; Wong, Poh Mun; Chan, Lai Wah; Heng, Paul Wan Sia

2015-01-01

Size reduction or milling of the active is often the first processing step in the design of a dosage form. The ability of a mill to convert coarse crystals into the target size and size distribution efficiently is highly desirable as the quality of the final pharmaceutical product after processing is often still dependent on the dimensional attributes of its component constituents. The F10 Fine Grind mill is a mechanical impact mill designed to produce unimodal mid-size particles by utilizing a single-pass two-stage size reduction process for fine grinding of raw materials needed in secondary processing. Box-Behnken designs were used to investigate the effects of various mill variables (impeller, blower and feeder speeds and screen aperture size) on the milling of coarse crystals. Response variables included the particle size parameters (D10, D50 and D90), span and milling rate. Milled particles in the size range of 5-200 μm, with D50 ranging from 15 to 60 μm, were produced. The impeller and feeder speeds were the most critical factors influencing the particle size and milling rate, respectively. Size distributions of milled particles were better described by their goodness-of-fit to a log-normal distribution (i.e. unimodality) rather than span. Milled particles with symmetrical unimodal distributions were obtained when the screen aperture size was close to the median diameter of coarse particles employed. The capacity for high throughput milling of particles to a mid-size range, which is intermediate between conventional mechanical impact mills and air jet mills, was demonstrated in the F10 mill. Prediction models from the Box-Behnken designs will aid in providing a better guide to the milling process and milled product characteristics. Copyright © 2014 Elsevier B.V. All rights reserved.

Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

2014-10-30

Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

Effects of X-ray irradiation to genetic transformation of Eruca sativa Mill mediated by agrobacterium rhizogenes

International Nuclear Information System (INIS)

Wu Zhenhua; Zhang Hong; Liu Bin; Li Ning; Niu Bingtao; Wang Genxuan; Li Sha; Sun Peng

2008-01-01

To investigate the effects of X-ray irradiation to the hairy root induction of Eruca sativa Mill, and to provide basic experimental data for concerted reaction of irradiation to the Genetic transformation technology. The aseptic cotyledons of Eruca sativa Mill were jointly treated with the X-ray at dose of 5, 10, 15, 20 Gy respectively and the different infected time, then the influence of explant age, pre-culturing time, dose of X-ray and infected time were studied. Furthermore, the hairy roots were testified in molecular level by the polymerase chain reaction(PCR). The irradiation of X-ray at dose of 15 Gy can improve the frequency of Eruca sativa Mill hairy root induction in a dose-dependent manner. Moreover, the transformation frequency in pre-infection plus irradiation group is higher than that in pre-irradiation plus infection group at the same irradiation dose. In addition, the PCR analysis also demonstrated that rolB gene of T-DNA from Ri plasmid had been integrated into the genome of the transformed roots. The irradiation of X-ray has some positive effects on the hairy root induction of Eruca sativa Mill, and the optimal revulsive dose is 15 Gy ora little bit more. (authors)

Effect of addition of water-soluble salts on the hydrogen generation of aluminum in reaction with hot water

International Nuclear Information System (INIS)

Razavi-Tousi, S.S.; Szpunar, J.A.

2016-01-01

Aluminum powder was ball milled for different durations of time with different weight percentages of water-soluble salts (NaCl and KCl). The hydrogen generation of each mixture in reaction with hot water was measured. A scanning electron microscope (SEM) as well as energy-dispersive spectroscopy (EDS) were used to investigate the morphology, surfaces and cross sections of the produced particles. The results show that the presence of salts in the microstructure of the aluminum considerably increases the hydrogen generation rate. At shorter milling times, the salt covers the aluminum particles and becomes embedded in layers within the aluminum matrix. At higher milling durations, salt and aluminum phases form composite particles. A higher percentage of the second phase significantly decreases the milling time needed for activation of the aluminum particles. Based on the EDS results from cross sections of the milled particles, a mechanism for improvement of the hydrogen generation rate in the presence of salts is suggested. - Highlights: • Milling and water soluble salts have a synergic effect on hydrogen generation. • Salt and aluminum form composite particles by milling. • Salt is dissolved in water leaving aluminum with much fresh surfaces for the reaction. • The chemical effect of salt on the reaction is negligible compared to its structural effect.

Dual-energy X-ray micro-CT imaging of hybrid Ni/Al open-cell foam

International Nuclear Information System (INIS)

Fíla, T.; Koudelka, P.; Zlámal, P.; Jiroušek, O.; Kumpová, I.; Vavřík, D.; Jung, A.

2016-01-01

In this paper, we employ dual-energy X-ray microfocus tomography (DECT) measurement to develop high-resolution finite element (FE) models that can be used for the numerical assessment of the deformation behaviour of hybrid Ni/Al foam subjected to both quasi-static and dynamic compressive loading. Cubic samples of hybrid Ni/Al open-cell foam with an edge length of [15]mm were investigated by the DECT measurement. The material was prepared using AlSi 7 Mg 0.3 aluminium foam with a mean pore size of [0.85]mm, coated with nanocrystalline nickel (crystallite size of approx. [50]nm) to form a surface layer with a theoretical thickness of [0.075]mm. CT imaging was carried out using state-of-the-art DSCT/DECT X-ray scanner developed at Centre of Excellence Telč. The device consists of a modular orthogonal assembly of two tube-detector imaging pairs, with an independent geometry setting and shared rotational stage mounted on a complex 16-axis CNC positioning system to enable unprecedented measurement variability for highly-detailed tomographical measurements. A sample of the metal foam was simultaneously irradiated using an XWT-240-SE reflection type X-ray tube and an XWT-160-TCHR transmission type X-ray tube. An enhanced dual-source sampling strategy was used for data acquisition. X-ray images were taken using XRD1622 large area GOS scintillator flat panel detectors with an active area of [410 × 410]mm and resolution [2048 × 2048]pixels. Tomographic scanning was performed in 1,200 projections with a 0.3 degree angular step to improve the accuracy of the generated models due to the very complex microstructure and high attenuation of the investigated material. Reconstructed data was processed using a dual-energy algorithm, and was used for the development of a 3D model and voxel model of the foam. The selected parameters of the models were compared with nominal parameters of the actual foam and showed good correlation

A dynamical atomic simulation for the Ni-Al Wulff nanoparticle

International Nuclear Information System (INIS)

Tang, Jianfeng; Yang, Jianyu

2013-01-01

Ni-Al bimetallic nanoparticle structures are studied from a kinetic point of view. The diffusion and growth of Ni (or Al) atoms on Al (or Ni) cores with the Wulff structure are simulated by molecular dynamics and nudged elastic band methods. An analytic embedded atom model is applied to the two metals. The energy barriers of several typical diffusion processes of the adatoms on the nanoparticle surface are calculated. Results show that the incorporation of the Ni atoms into the Al core easily occurs, and the reverse process does not readily proceed. The growth simulations reveal that a better core-shell nanoparticle is obtained when the Al atoms are deposited on the Ni core at lower temperatures, and the deposition of the Ni atoms on the Al core leads to an amorphous surface. - Highlights: • The diffusion barrier of Ni (or Al) on Al (or Ni) Wulff nanoparticle is studied. • Ni atom can diffuse easily into Al core, and Al atom generally segregate on surface. • A core-shell nanoparticle is obtained for the deposition of Al atoms on Ni core. • Amorphous nanoparticle surface is obtained by depositing Ni atoms on Al core

Einstein-Yang-Mills from pure Yang-Mills amplitudes

Energy Technology Data Exchange (ETDEWEB)

Nandan, Dhritiman; Plefka, Jan [Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin,Zum Großen Windkanal 6, D-12489 Berlin (Germany); Schlotterer, Oliver [Max-Planck-Institut für Gravitationsphysik, Albert-Einstein-Institut,Am Mühlenberg 1, D-14476 Potsdam (Germany); Wen, Congkao [I.N.F.N. Sezione di Roma Tor Vergata,Via della Ricerca Scientifica, 00133 Roma (Italy)

2016-10-14

We present new relations for scattering amplitudes of color ordered gluons and gravitons in Einstein-Yang-Mills theory. Tree-level amplitudes of arbitrary multiplicities and polarizations involving up to three gravitons and up to two color traces are reduced to partial amplitudes of pure Yang-Mills theory. In fact, the double-trace identities apply to Einstein-Yang-Mills extended by a dilaton and a B-field. Our results generalize recent work of Stieberger and Taylor for the single graviton case with a single color trace. As the derivation is made in the dimension-agnostic Cachazo-He-Yuan formalism, our results are valid for external bosons in any number of spacetime dimensions. Moreover, they generalize to the superamplitudes in theories with 16 supercharges.

Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

Science.gov (United States)

Bryan, Zachary A.

The identification and role of point defects in AlN thin films and bulk crystals are studied. High-resolution photoluminescence studies on doped and undoped c-plane and mplane homoepitaxial films reveal several sharp donor-bound exciton (DBX) peaks with a full width at half maximum (FWHM) as narrow as 500 microeV. Power dependent photoluminescence distinguish DBXs tied to the Gamma5 free exciton (FX) from those tied to the Gamma 1 FX. The DBX transitions at 6.012 and 6.006 eV are identified as originating from the neutral-donor-silicon (Si0X) and neutral-donor-oxygen (O0X) respectively. With multiple DBXs and their respective two electron satellite peaks identified, a Haynes Rule plot is developed for the first time for AlN. While high quality AlN homoepitaxy is achievable by metalorganic chemical vapor deposition (MOCVD) growth, current commercially available AlN wafers are typically hindered by the presence of a broad below bandgap optical absorption band centered at 4.7 eV ( 265 nm) with an absorption coefficient of well over 1000 cm-1. Through density functional theory calculations, it is determined that substitutional carbon on the nitrogen site causes this absorption. Further studies reveal a donor-acceptor pair (DAP) recombination between substitutional carbon on the nitrogen site and a nitrogen vacancy with an emission energy of 2.8 eV. Lastly, co-doping bulk AlN with Si or O is explored and found to suppress the unwanted 4.7 eV absorption band. A novel Fermi level control scheme for point defect management during MOCVD growth in III-nitride materials by above bandgap illumination is proposed and implemented for Mg-doped GaN and Si-doped AlGaN materials as a proof of concept. The point defect control scheme uses photo-generated minority charge carriers to control the electro-chemical potential of the system and increase the formation energies of electrically charged compensating point defects. The result is a lower incorporation of compensating point

7 CFR 868.310 - Grades and grade requirements for the classes Long Grain Milled Rice, Medium Grain Milled Rice...

Science.gov (United States)

2010-01-01

... Grain Milled Rice, Medium Grain Milled Rice, Short Grain Milled Rice, and Mixed Milled Rice. (See also Â... Milled Rice Principles Governing Application of Standards § 868.310 Grades and grade requirements for the classes Long Grain Milled Rice, Medium Grain Milled Rice, Short Grain Milled Rice, and Mixed Milled Rice...

75 FR 71463 - Woodland Mills Corporation Mill Spring, NC; Notice of Revised Determination on Reconsideration

Science.gov (United States)

2010-11-23

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-73,695] Woodland Mills Corporation Mill Spring, NC; Notice of Revised Determination on Reconsideration By application dated July 22... regarding the eligibility of workers and former workers of Woodland Mills Corporation, Mill Spring, North...

Studies of (n,t) reactions on light nuclei

International Nuclear Information System (INIS)

Suhaimi, A.

1988-04-01

Cross Sections were measured with uncertainties of 13 to 21% for the reactions 9 Be(n,t)L 7 Li, 10 B(n,t)2α and 14 N(n,t) 12 C over various energy ranges. Irradiations were performed with thermal neutrons and neutrons produced via the reactions 2 H(d,n) 3 He and 9 Be(d,n) 10 B. The tritium produced and accumulated in the irradiated samples was separated by vacuum extraction and measured in the gas phase using anticoincidence β - counting. The residual tritium content was determined for the enriched 10 B and AlN samples. The characteristics of tritium diffusion in B 4 C were studied by high-temperature release experiments. The Li impurity in the AlN sample was determined via neutron activation analysis. The average 9 Be(n,t) 7 Li cross sections lie between 3 and 14 mb for break-up neutrons produced by 17.5 to 31.0 MeV deuterons on a thick Be target. A comparison of the measured data with the values deduced from differential data and neutron spectral distributions shows agreement within ± 21%. The 10 B(n,t)2α cross sections in the neutron energy range of 0.025 eV to 10.6 MeV lie between 12 and 215 mb (with the maximum at about 5.5 MeV). The 14 N(n,t) 12 C cross sections in the neutron energy range of 5.0 to 10.6 MeV lie between 11 and 30 mb. The excitation function shows a fluctuation which is attributed to the decay properties of the compound nucleus 15 N. Detailed Hauser-Feshbach calculations show that the statistical model cannot satisfactorily describe the (n,t) cross section on light nuclei. (orig.)

Application of mechanical alloying to synthesis of intermetallic phases based alloys

International Nuclear Information System (INIS)

Dymek, S.

2001-01-01

Mechanical alloying is the process of synthesis of powder materials during milling in high energetic mills, usually ball mills. The central event in mechanical alloying is the ball-powder-ball collision. Powder particles are trapped between the colliding balls during milling and undergo deformation and/or fracture. Fractured parts are cold welded. The continued fracture and cold welding results in a uniform size and chemical composition of powder particles. The main applications of mechanical alloying are: processing of ODS alloys, syntheses of intermetallic phases, synthesis of nonequilibrium structures (amorphous alloys, extended solid solutions, nanocrystalline, quasi crystals) and magnetic materials. The present paper deals with application of mechanical alloying to synthesis Ni A l base intermetallic phases as well as phases from the Nb-Al binary system. The alloy were processed from elemental powders. The course of milling was monitored by scanning electron microscopy and X-ray diffraction. After milling, the collected powders were sieved by 45 μm grid and hot pressed (Nb alloys and NiAl) or hot extruded (NiAl). The resulting material was fully dense and exhibited fine grain (< 1 μm) and uniform distribution of oxide dispersoid. The consolidated material was compression and creep tested. The mechanical properties of mechanically alloys were superior to properties of their cast counterparts both in the room and elevated temperatures. Higher strength of mechanically alloyed materials results from their fine grains and from the presence of dispersoid. At elevated temperatures, the Nb-Al alloys have higher compression strength than NiAl-based alloys processed at the same conditions. The minimum creep rates of mechanically alloyed Nb alloys are an order of magnitude lower than analogously processed NiAl-base alloys. (author)

Computer modeling of the process of self-propagating high-temperature synthesis in thin system Ni-Al

International Nuclear Information System (INIS)

Poletayev, G.M.; Starostenkov, M.D.; Denisova, N.F.; Skakov, M.K.

2004-01-01

Full text: The process of synthesis of thermal phases of the system Ni-Al is studied through the method of molecular dynamics. As the object of investigation was chosen two-dimensional crystal, that corresponds to atomic packing laying at the plane of volumetric fcc crystal. Clean Ni was taken as a matrix crystal. A particle of clean Al is packed in the center of matrix block. Beyond the bounds of calculated block crystal packing is repeated with the help of periodical border conditions. The interaction between different pairs of atoms is set by pair potential function of Morse, considering interatomic bonding of the point of the sixth coordinate sphere. The allocation of speeds of atomic function in the system is set through the Boltzmann factor, depending the temperature. When the bicrystal is represented by the ideal atom packing and there are no vacancies , the process of structural adjustment is only observed at the temperature, that is higher than melting point. At that, structural adjustment is observed in circular mechanism of atom allocation, also through the border between phases of clean Ni and Al. As a result, Al particle is transformed, at the border between metals, fields of positional disorder and embryos of intermetallide phases NiAl 2 , Ni 2 Al, Ni 3 Al. The introduction of of free volume through the creation of vacancies significantly lowers the temperature of the beginning of the synthesis process of intermetallide phases. The greatest decrease in temperature to the point of 300 K happens, when the vacancies are located in Ni field of bicrystal, the beginning of the thermo-activation is directly connected with the distance from interphase borders. As the process of thermo-activation continues, vacancies located in Ni matrix right up to seventh neighborhood relatively the border bicrystal. During thermo-activation Al particles enter the field and activate the synthesis process

Evaluation of End Mill Coatings

Energy Technology Data Exchange (ETDEWEB)

L. J. Lazarus; R. L. Hester,

2005-08-01

Milling tests were run on families of High Speed Steel (HSS) end mills to determine their lives while machining 304 Stainless Steel. The end mills tested were made from M7, M42 and T15-CPM High Speed Steels. The end mills were also evaluated with no coatings as well as with Titanium Nitride (TiN) and Titanium Carbo-Nitride (TiCN) coatings to determine which combination of HSS and coating provided the highest increase in end mill life while increasing the cost of the tool the least. We found end mill made from M42 gave us the largest increase in tool life with the least increase in cost. The results of this study will be used by Cutting Tool Engineering in determining which end mill descriptions will be dropped from our tool catalog.

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Czech Academy of Sciences Publication Activity Database

Soltani, A.; Stolz, A.; Charrier, J.; Mattalah, M.; Gerbedoen, J.-C.; Barkad, H.A.; Mortet, Vincent; Rousseau, M.; Bourzgui, N.; BenMoussa, A.; De Jaeger, J.-C.

2014-01-01

Roč. 115, č. 16 (2014), "163515-1"-"163515-6" ISSN 0021-8979 Institutional support: RVO:68378271 Keywords : III-V semiconductors * AlN films * surface scattering * refractive index * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Bioassay for uranium mill tailings

International Nuclear Information System (INIS)

Tschaeche, A.N.

1986-01-01

Uranium mill tailings are composed of fine sand that contains, among other things, some uranium (U/sup 238/ primarily), and all of the uranium daughters starting with /sup 230/Th that are left behind after the usable uranium is removed in the milling process. Millions of pounds of tailings are and continue to be generated at uranium mills around the United States. Discrete uranium mill tailings piles exist near the mills. In addition, the tailings materials were used in communities situated near mill sites for such purposes as building materials, foundations for buildings, pipe runs, sand boxes, gardens, etc. The Uranium Mill Tailings Remedial Action Project (UMTRAP) is a U.S. Department of Energy Program designed with the intention of removing or stabilizing the mill tailings piles and the tailings used to communities so that individuals are not exposed above the EPA limits established for such tailings materials. This paper discusses the bioassay programs that are established for workers who remove tailings from the communities in which they are placed

Biomass torrefaction mill

Science.gov (United States)

Sprouse, Kenneth M.

2016-05-17

A biomass torrefaction system includes a mill which receives a raw biomass feedstock and operates at temperatures above 400 F (204 C) to generate a dusty flue gas which contains a milled biomass product.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Science.gov (United States)

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

2016-06-09

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

The influence of ALN-Al gradient material gradient index on ballistic performance

International Nuclear Information System (INIS)

Wang Youcong; Liu Qiwen; Li Yao; Shen Qiang

2013-01-01

Ballistic performance of the gradient material is superior to laminated material, and gradient materials have different gradient types. Using ls-dyna to simulate the ballistic performance of ALN-AL gradient target plates which contain three gradient index (b = 1, b = 0.5, b = 2). Through Hopkinson bar numerical simulation to the target plate materials, we obtained the reflection stress wave and transmission stress wave state of gradient material to get the best gradient index. The internal stress state of gradient material is simulated by amplification processing of the target plate model. When the gradient index b is equal to 1, the gradient target plate is best of all.

Microstructural characteristics and mechanical properties of carbon nanotube reinforced aluminum alloy composites produced by ball milling

International Nuclear Information System (INIS)

Raviathul Basariya, M.; Srivastava, V.C.; Mukhopadhyay, N.K.

2014-01-01

Highlights: • 6082 Al alloy composite with 2 wt% multiwalled carbon nanotubes prepared by milling. • Effect of milling time on structure and property evolution has been studied. • The reinforced composite powders showed a drastic crystallite size refinement. • The presence of carbon nanotube led to a two fold increase in the hardness and modulus. • The composite powder showed good thermal stability studied by DTA. - Abstract: The influence of milling time on the structure, morphology and thermal stability of multi-walled carbon nanotubes (MWCNTs) reinforced EN AW6082 aluminum alloy powders has been studied. After structural and microstructural characterization of the mechanically milled powders micro- and nano-hardness of the composite powder particles were evaluated. The morphological and X-ray diffraction studies on the milled powders revealed that the carbon nanotubes (CNTs) were uniformly distributed and embedded within the aluminum matrix. No reaction products were detected even after long milling up to 50 h. Nanotubes became shorter in length as they fractured under the impact and shearing action during the milling process. A high hardness of about 436 ± 52 HV is achieved for the milled powders, due to the addition of MWCNTs, after milling for 50 h. The increased elastic modulus and nanohardness can be attributed to the finer grain size evolved during high energy ball milling and to the uniform distribution of hard CNTs in the Al-alloy matrix. The hardness values of the composite as well as the matrix alloy compares well with that predicted by the Hall–Petch relationship

The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

Directory of Open Access Journals (Sweden)

Huann-Ming Chou

2015-01-01

Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Science.gov (United States)

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I.-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-04-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias ( V DSQ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage ( V th), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

International Nuclear Information System (INIS)

Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

1999-01-01

The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

REACTION KINETICS SELF-PROPOGATION REGIME DURING PRE-IGNITION PERIOD

Directory of Open Access Journals (Sweden)

D. D. Polishchuk

2015-11-01

Full Text Available Self-propagation high temperature synthesis (SHS technological regulations application is mainly limited by transformation processes taking place in the pre-ignition period. Zn-S, Zn-Se, Ti-C and 3Ni-Al small sample systems ignition experimental study was carried out under heating conditions in inert atmosphere with temperature values T = 1200K.It was shown that at this temperature level a chemical reaction can be initiated, turning into a self-sustaining mode. Wherein the reaction limiting factors can be mass transfer processes. Ignition temperatures were determined and plotted via the samples size. A physical ignition model was developed assuming the pre-ignition period limiting reaction Arrhenius law.The inverse combustion problem solution made it possible to calculate the low-temperature (T = 800 ÷ 1200K reaction kinetic constant values. Comparison thus obtained values  with the known data of other researchers showed their good agreement.Activation energy values for the Zn-S system were used to calculate the heat wave propagation speed. This value appeared to coincide with experimental values.Obtained results analysis leads to the conclusion about the availability and justification for the proposed method of express-analysis of presupposed, but previously not studied SHS systems. The results thus obtained allow us to estimate conditions for the SHS technology implementation, the reactor characteristic sizes and the thermal wave’s propagation speed.

Decontamination effect of milling by a jet mill on bacteria in rice flour.

Science.gov (United States)

Sotome, Itaru; Nei, Daisuke; Tsuda, Masuko; Mohammed, Sharif Hossen; Takenaka, Makiko; Okadome, Hiroshi; Isobe, Seiichiro

2011-06-01

The decontamination effect of milling by a jet mill was investigated by counting the number of bacteria in brown and white rice flour with mean particle diameters of 3, 20, and 40µm prepared by the jet mill. In the jet mill, the particles are crushed and reduced in size by the mechanical impact caused by their collision. Although the brown and white rice grains were contaminated with approximately 10(6) and 10(5) CFU/g bacteria, the microbial load of the rice flour decreased as the mean particle diameter decreased, ultimately decreasing to approximately 104 and 103 CFU/g in the brown and white rice flour. The temperature and pressure changes of the sample were not considered to have an effect on reducing the bacterial count during the milling. Hence, it was thought that the rice flour was decontaminated by other effects.

Tertiary treatment of pulp mill wastewater by solar photo-Fenton

Energy Technology Data Exchange (ETDEWEB)

Lucas, Marco S., E-mail: mlucas@utad.pt [Centro de Quimica de Vila Real, Universidade de Tras-os-Montes e Alto Douro, Apartado 1013, 5001-801 Vila Real (Portugal); Peres, Jose A.; Amor, Carlos [Centro de Quimica de Vila Real, Universidade de Tras-os-Montes e Alto Douro, Apartado 1013, 5001-801 Vila Real (Portugal); Prieto-Rodriguez, Lucia; Maldonado, Manuel I.; Malato, Sixto [Plataforma Solar de Almeria (CIEMAT), Carretera de Senes, Km 4, 04200, Tabernas, Almeria (Spain)

2012-07-30

Highlights: Black-Right-Pointing-Pointer We firstly report a real pulp mill wastewater treatment by solar photo-Fenton in a CPC reactor. Fenton reagent experiments were tested firstly. Black-Right-Pointing-Pointer Solar photo-Fenton presents excellent ability to treat the pulp mill wastewater. Black-Right-Pointing-Pointer Experimental conditions were optimised. Black-Right-Pointing-Pointer Biodegradability and toxicity tests (respirometry assays and BOD{sub 5}/COD ratio) were performed during the wastewater treatment. Black-Right-Pointing-Pointer A way to reduce the economic and environmental impact was evaluated. - Abstract: This work reports on pulp mill wastewater (PMW) tertiary treatment by Fenton (Fe{sup 2+}/H{sub 2}O{sub 2}) and solar photo-Fenton (Fe{sup 2+}/H{sub 2}O{sub 2}/UV) processes in a pilot plant based on compound parabolic collectors (CPCs). Solar photo-Fenton reaction is much more efficient than the respective dark reaction under identical experimental conditions. It leads to DOC mineralisation, COD and total polyphenols (TP) removal higher than 90%. The solar photo-Fenton experiment with 5 mg Fe L{sup -1} reaches 90% of DOC mineralisation with 31 kJ L{sup -1} of UV energy and 50 mM of H{sub 2}O{sub 2}. The initial non-biodegradability of PMW, as shown by respirometry assays and BOD{sub 5}/COD ratio, can be changed after a solar photo-Fenton treatment. Experiments with 20 and 50 mg Fe L{sup -1} revealed that solar photo-Fenton can reach the same DOC degradation (90%), however, consuming less H{sub 2}O{sub 2} and time. Diluting the initial organic load to 50% also diminishes the dosage of H{sub 2}O{sub 2} and the necessary reaction time to achieve high DOC removals. Accordingly, solar photo-Fenton can be considered an alternative or complementary process to improve the performance of a biologic treatment and, subsequently, achieve legal limits on discharge into natural waters.

Study of the 26Al(n,p)26Mg and 26Al(n,α)23Na reactions using the 27Al(p,p')27Al inelastic scattering reaction

International Nuclear Information System (INIS)

Benamara, S; De Séréville, N; Hammache, F; Stefan, I; Roussel, P; Ancelin, S; Assié, M; Guillot, J; Le Crom, B; Lefebvre, L; Adsley, P; Laird, A M; Barton, C; Diget, C; Fox, S; Coc, A; Deloncle, I; Hamadache, C; Kiener, J; Lefebfre-Schuhl, A

2016-01-01

26 Al was the first cosmic radioactivity ever detected in the galaxy as well as one of the first extinct radioactivity observed in refractory phases of meteorites. Its nucleosynthesis in massive stars is still uncertain mainly due to the lack of nuclear information concerning the 26 Al(n,p) 26 Mg and 26 Al(n,α) 23 Na reactions. We report on a single and coincidence measurement of the 27 Al(p,p') 27 Al(p) 26 Mg and 27 Al(p,p') 27 Al(α) 23 Na reactions performed at the Orsay TANDEM facility aiming at the spectroscopy study of 27 Al above the neutron threshold. Fourteen states are observed for the first time within 350 keV above the 26 Al+n threshold. (paper)

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Redondo-Cubero, A.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

2008-01-01

Indium incorporation into wurtzite (0001)-oriented In x Al y Ga 1-x-y N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01< y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

Fabrication of AlN-TiC/Al composites by gas injection processing

Institute of Scientific and Technical Information of China (English)

YU Huashun; CHEN Hongmei; MA Rendian; MIN Guanghui

2006-01-01

The fabrication of AlN-TiC/Al composites by carbon-and nitrogen-containing gas injection into Al-Mg-Ti melts was studied. It was shown that AlN and TiC particles could be formed by the in situ reaction of mixture gas (N2+C2H2+NH3) with Al-Mg-Ti melts. The condition for the formation of AlN was that the treatment temperature must be higher than 1373 K, and the amounts of AlN and TiC increased with the increase of the treatment temperature and the gas injection time.It was considered that AlN was formed by the direct reaction of Al with nitrogen-containing gas at the interface of the gas bubble and the melt. However, the mechanism of TiC formation is a combination mechanism of solution-precipitation and solid-liquid reaction.

Hybrid ABC Optimized MARS-Based Modeling of the Milling Tool Wear from Milling Run Experimental Data

OpenAIRE

Garc?a Nieto, Paulino Jos?; Garc?a-Gonzalo, Esperanza; Ord??ez Gal?n, Celestino; Bernardo S?nchez, Antonio

2016-01-01

Milling cutters are important cutting tools used in milling machines to perform milling operations, which are prone to wear and subsequent failure. In this paper, a practical new hybrid model to predict the milling tool wear in a regular cut, as well as entry cut and exit cut, of a milling tool is proposed. The model was based on the optimization tool termed artificial bee colony (ABC) in combination with multivariate adaptive regression splines (MARS) technique. This optimization mechanism i...

Influence of interfacial reactions on the fiber push-out behavior in sapphire fiber-reinforced-NiAl(Yb) composites

International Nuclear Information System (INIS)

Tewari, S.N.; Asthana, R.; Tiwari, R.; Bowman, R.R.

1993-01-01

The influence of microstructure of the fiber-matrix interface on the fiber push-out behavior has been examined in sapphire fiber-reinforced NiAl and NiAl(Yb) matrix composites synthesized using powder metallurgy techniques combined with zone directional solidification (DS). The push-out stress-displacement curves were observed to consist of an initial 'pseudoelastic' region, wherein the stress increased linearly with displacement, followed by an 'inelastic' region, where the slope of the stress-displacement plot decreased until a maximum stress was reached, and the subsequent stress drop to a constant 'frictional' stress. Chemical reaction between the fiber and the matrix resulted in higher interfacial shear strength in powder cloth processed sapphire-NiAl(Yb) composites as compared to the sapphire-NiAl composites. Grain boundaries in contact with the fibers on the back face of the push-out samples were the preferred sites for crack nucleation in PM composites. The frictional stress was independent of the microstructure and processing variables for NiAl composites, but showed strong dependence on these variables for the NiAl(Yb) composites. The DS processing enhanced the fiber-matrix interfacial shear strength of feedstock PM-NiAl/sapphire composites. However, it reduced the interfacial shear strength of PM-NiAl(Yb)-sapphire composites

Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

Energy Technology Data Exchange (ETDEWEB)

Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

2015-03-30

Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

Energy Technology Data Exchange (ETDEWEB)

Wagner, Jan-Martin

2004-10-14

In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

High-Temperature Oxidation-Resistant and Low Coefficient of Thermal Expansion NiAl-Base Bond Coat Developed for a Turbine Blade Application

Science.gov (United States)

2003-01-01

Many critical gas turbine engine components are currently made from Ni-base superalloys that are coated with a thermal barrier coating (TBC). The TBC consists of a ZrO2-based top coat and a bond coat that is used to enhance the bonding between the superalloy substrate and the top coat. MCrAlY alloys (CoCrAlY and NiCrAlY) are currently used as bond coats and are chosen for their very good oxidation resistance. TBC life is frequently limited by the oxidation resistance of the bond coat, along with a thermal expansion mismatch between the metallic bond coat and the ceramic top coat. The aim of this investigation at the NASA Glenn Research Center was to develop a new longer life, higher temperature bond coat by improving both the oxidation resistance and the thermal expansion characteristics of the bond coat. Nickel aluminide (NiAl) has excellent high-temperature oxidation resistance and can sustain a protective Al2O3 scale to longer times and higher temperatures in comparison to MCrAlY alloys. Cryomilling of NiAl results in aluminum nitride (AlN) formation that reduces the coefficient of thermal expansion (CTE) of the alloy and enhances creep strength. Thus, additions of cryomilled NiAl-AlN to CoCrAlY were examined as a potential bond coat. In this work, the composite alloy was investigated as a stand-alone substrate to demonstrate its feasibility prior to actual use as a coating. About 85 percent of prealloyed NiAl and 15 percent of standard commercial CoCrAlY alloys were mixed and cryomilled in an attritor with stainless steel balls used as grinding media. The milling was carried out in the presence of liquid nitrogen. The milled powder was consolidated by hot extrusion or by hot isostatic pressing. From the consolidated material, oxidation coupons, four-point bend, CTE, and tensile specimens were machined. The CTE measurements were made between room temperature and 1000 C in an argon atmosphere. It is shown that the CTE of the NiAl-AlN-CoCrAlY composite bond coat

Beneficial uses of paper mill residuals for New York State`s recycled-paper mills. Final report

Energy Technology Data Exchange (ETDEWEB)

NONE

1995-09-01

This report evaluates the New York paper mill industry in terms of the productive management and treatment of solid wastes. It identifies current efforts by recycling mills to beneficially use paper mill residuals (often called sludge) and suggests additional options that should be considered by the industry in general and individual mills in particular. It also examines the regulations and economics affecting the mills and suggests actions that could improve the industry`s ability to convert wastes to value-added products. The report recommends that the mills should continue measures to reduce fiber and filler clay losses, promote the transfer of usable fiber and clay to mills able to use them, upgrade sludge dewatering capabilities, and take a more regional approach to solid waste disposal problems. State agencies are urged to support these efforts, encourage the development and commercialization of new beneficial use technologies, and reduce regulatory barriers whenever possible.

Integrated treatment of olive mill wastewater (OMW) by the combination of Fenton's reaction and anaerobic treatment

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, F.A.; Badawy, M.I. [Water Pollution Department, National Research Center (NRC), Dokki, Cairo (Egypt); El-Khateeb, M.A. [Water Pollution Department, National Research Center (NRC), Dokki, Cairo (Egypt)], E-mail: elkhateebcairo@yahoo.com; El-Kalliny, A.S. [Water Pollution Department, National Research Center (NRC), Dokki, Cairo (Egypt)

2009-03-15

The use of an integrated treatment scheme consisting of wet hydrogen peroxide catalytic oxidation (WHPCO) followed by two-stage upflow anaerobic sludge blanket (UASB) reactor (10 l each) for the treatment of olive mill wastewater was the subject of this study. The diluted wastewater (1:1) was pre-treated using Fenton's reaction. Optimum operating conditions namely, pH, H{sub 2}O{sub 2} dose, Fe{sup +2}, COD:H{sub 2}O{sub 2} ratio and Fe{sup +2}:H{sub 2}O{sub 2} ratio were determined. The UASB reactor was fed continuously with the pre-treated wastewater. The hydraulic retention time was kept constant at 48 h (24 h for each stage). The conventional parameters such as COD, BOD, TOC, TKN, TP, TSS, oil and grease, and total phenols were determined. The concentrations of polyphenolic compounds in raw wastewater and effluents of each treatment step were measured using HPLC. The results indicated a good quality final effluent. Residual concentrations of individual organic compounds ranged from 0.432 mg l{sup -1} for {rho}-hydroxy-benzaldhyde to 3.273 mg l{sup -1} for cinnamic acid.

Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

Science.gov (United States)

Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

2018-01-01

This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

Steam reforming of different biomass tar model compounds over Ni/Al_2O_3 catalysts

International Nuclear Information System (INIS)

Artetxe, Maite; Alvarez, Jon; Nahil, Mohamad A.; Olazar, Martin; Williams, Paul T.

2017-01-01

Highlights: • Order of reactivity: anisole > furfural > indene > phenol > toluene > methyl naphthalene. • Higher coke deposition for oxygenates (1.5–2.8%) than for aromatics (0.5–0.8%). • Amorphous coke is deposited for oxygenates and filamentous carbon for aromatics. • Ni content of 20 wt.% shows the higher conversion (90%) and H_2 potential (63%). - Abstract: This work focuses on the removal of the tar derived from biomass gasification by catalytic steam reforming on Ni/Al_2O_3 catalysts. Different tar model compounds (phenol, toluene, methyl naphthalene, indene, anisole and furfural) were individually steam reformed (after dissolving each one in methanol), as well as a mixture of all of them, at 700 °C under a steam/carbon (S/C) ratio of 3 and 60 min on stream. The highest conversions and H_2 potential were attained for anisole and furfural, while methyl naphthalene presented the lowest reactivity. Nevertheless, the higher reactivity of oxygenates compared to aromatic hydrocarbons promoted carbon deposition on the catalyst (in the 1.5–2.8 wt.% range). When the concentration of methanol is decreased in the feedstock and that of toluene or anisole is increased, the selectivity to CO is favoured in the gaseous products, thus increasing coke deposition on the catalyst and decreasing catalyst activity for the steam reforming reaction. Moreover, an increase in Ni loading in the catalyst from 5 to 20% enhances carbon conversion and H_2 formation in the steam reforming of a mixture of all the model compounds studied, but these values decrease for a Ni content of 40%. Coke formation also increased by increasing Ni loading, attaining its maximum value for 40% Ni (6.5 wt.%).

Electronic and atomic structure of the AlnHn+2 clusters

DEFF Research Database (Denmark)

Martinez, Jose Ignacio; Alonso, J.A.

2008-01-01

The electronic and atomic structure of the family of hydrogenated Al clusters AlnHn+2 with n=4-11 has been studied using the density functional theory with the generalized gradient approximation (GGA) for exchange and correlation. All these clusters have substantial gaps between the highest...... a polyhedron of n vertices and n H atoms form strong H-Al terminal bonds; one pair of electrons is involved in each of those bonds. The remaining n+1 electron pairs form a delocalized cloud over the surface of the Al cage. The clusters fulfilling the Wade-Mingos rule have wider HOMO-LUMO gaps...... and are chemically more stable. The trends in the gap have some reflections in the form of the photoabsorption spectra, calculated in the framework of time-dependent density functional theory using the GGA single-particle energies and orbitals and a local density approximation exchange-correlation kernel....

In Situ Monitoring of the Mechanosynthesis of the Archetypal Metal-Organic Framework HKUST-1: Effect of Liquid Additives on the Milling Reactivity.

Science.gov (United States)

Stolar, Tomislav; Batzdorf, Lisa; Lukin, Stipe; Žilić, Dijana; Motillo, Cristina; Friščić, Tomislav; Emmerling, Franziska; Halasz, Ivan; Užarević, Krunoslav

2017-06-05

We have applied in situ monitoring of mechanochemical reactions by high-energy synchrotron powder X-ray diffraction to study the role of liquid additives on the mechanochemical synthesis of the archetypal metal-organic framework (MOF) HKUST-1, which was one of the first and is still among the most widely investigated MOF materials to be synthesized by solvent-free procedures. It is shown here how the kinetics and mechanisms of the mechanochemical synthesis of HKUST-1 can be influenced by milling conditions and additives, yielding on occasion two new and previously undetected intermediate phases containing a mononuclear copper core, and that finally rearrange to form the HKUST-1 architecture. On the basis of in situ data, we were able to tune and direct the milling reactions toward the formation of these intermediates, which were isolated and characterized by spectroscopic and structural means and their magnetic properties compared to those of HKUST-1. The results have shown that despite the relatively large breadth of analysis available for such widely investigated materials as HKUST-1, in situ monitoring of milling reactions can help in the detection and isolation of new materials and to establish efficient reaction conditions for the mechanochemical synthesis of porous MOFs.

Airborne effluent control at uranium mills

International Nuclear Information System (INIS)

Sears, M.B.

1976-01-01

The Oak Ridge National Laboratory has made an engineering cost--environmental benefit study of radioactive waste treatment systems for decreasing the amount of radioactive materials released from uranium ore processing mills. This paper summarizes the results of the study which pertain to the control and/or abatement of airborne radioactive materials from the mill processes. The tailings area is not included. Present practices in the uranium milling industry, with particular emphasis on effluent control and waste management, have been surveyed. A questionnaire was distributed to each active mill in the United States. Replies were received from about 75 percent of the mill operators. Visits were made to six operating uranium mills that were selected because they represented the different processes in use today and the newest, most modern in mill designs. Discussions were held with members of the Region IV Office of NRC and the Grand Junction Office of ERDA. Nuclear Science Abstracts, as well as other sources, were searched for literature pertinent to uranium mill processes, effluent control, and waste management

FM Interviews: Stephanie Mills

OpenAIRE

Valauskas, Edward

2002-01-01

Stephanie Mills is an author, editor, lecturer and ecological activist who has concerned herself with the fate of the earth and humanity since 1969, when her commencement address at Mills College in Oakland, Calif., drew the attention of a nation. Her speech, which the New York Times called "perhaps the most anguished statement" of the year's crop of valedictory speeches, predicted a bleak future. According to Mills, humanity was destined for suicide, the result of overpopulation and overuse ...

Rough mill simulator version 3.0: an analysis tool for refining rough mill operations

Science.gov (United States)

Edward Thomas; Joel Weiss

2006-01-01

ROMI-3 is a rough mill computer simulation package designed to be used by both rip-first and chop-first rough mill operators and researchers. ROMI-3 allows users to model and examine the complex relationships among cutting bill, lumber grade mix, processing options, and their impact on rough mill yield and efficiency. Integrated into the ROMI-3 software is a new least-...

Hybrid ABC Optimized MARS-Based Modeling of the Milling Tool Wear from Milling Run Experimental Data.

Science.gov (United States)

García Nieto, Paulino José; García-Gonzalo, Esperanza; Ordóñez Galán, Celestino; Bernardo Sánchez, Antonio

2016-01-28

Milling cutters are important cutting tools used in milling machines to perform milling operations, which are prone to wear and subsequent failure. In this paper, a practical new hybrid model to predict the milling tool wear in a regular cut, as well as entry cut and exit cut, of a milling tool is proposed. The model was based on the optimization tool termed artificial bee colony (ABC) in combination with multivariate adaptive regression splines (MARS) technique. This optimization mechanism involved the parameter setting in the MARS training procedure, which significantly influences the regression accuracy. Therefore, an ABC-MARS-based model was successfully used here to predict the milling tool flank wear (output variable) as a function of the following input variables: the time duration of experiment, depth of cut, feed, type of material, etc . Regression with optimal hyperparameters was performed and a determination coefficient of 0.94 was obtained. The ABC-MARS-based model's goodness of fit to experimental data confirmed the good performance of this model. This new model also allowed us to ascertain the most influential parameters on the milling tool flank wear with a view to proposing milling machine's improvements. Finally, conclusions of this study are exposed.

Hybrid ABC Optimized MARS-Based Modeling of the Milling Tool Wear from Milling Run Experimental Data

Directory of Open Access Journals (Sweden)

Paulino José García Nieto

2016-01-01

Full Text Available Milling cutters are important cutting tools used in milling machines to perform milling operations, which are prone to wear and subsequent failure. In this paper, a practical new hybrid model to predict the milling tool wear in a regular cut, as well as entry cut and exit cut, of a milling tool is proposed. The model was based on the optimization tool termed artificial bee colony (ABC in combination with multivariate adaptive regression splines (MARS technique. This optimization mechanism involved the parameter setting in the MARS training procedure, which significantly influences the regression accuracy. Therefore, an ABC–MARS-based model was successfully used here to predict the milling tool flank wear (output variable as a function of the following input variables: the time duration of experiment, depth of cut, feed, type of material, etc. Regression with optimal hyperparameters was performed and a determination coefficient of 0.94 was obtained. The ABC–MARS-based model's goodness of fit to experimental data confirmed the good performance of this model. This new model also allowed us to ascertain the most influential parameters on the milling tool flank wear with a view to proposing milling machine's improvements. Finally, conclusions of this study are exposed.

Hybrid ABC Optimized MARS-Based Modeling of the Milling Tool Wear from Milling Run Experimental Data

Science.gov (United States)

García Nieto, Paulino José; García-Gonzalo, Esperanza; Ordóñez Galán, Celestino; Bernardo Sánchez, Antonio

2016-01-01

Milling cutters are important cutting tools used in milling machines to perform milling operations, which are prone to wear and subsequent failure. In this paper, a practical new hybrid model to predict the milling tool wear in a regular cut, as well as entry cut and exit cut, of a milling tool is proposed. The model was based on the optimization tool termed artificial bee colony (ABC) in combination with multivariate adaptive regression splines (MARS) technique. This optimization mechanism involved the parameter setting in the MARS training procedure, which significantly influences the regression accuracy. Therefore, an ABC–MARS-based model was successfully used here to predict the milling tool flank wear (output variable) as a function of the following input variables: the time duration of experiment, depth of cut, feed, type of material, etc. Regression with optimal hyperparameters was performed and a determination coefficient of 0.94 was obtained. The ABC–MARS-based model's goodness of fit to experimental data confirmed the good performance of this model. This new model also allowed us to ascertain the most influential parameters on the milling tool flank wear with a view to proposing milling machine's improvements. Finally, conclusions of this study are exposed. PMID:28787882

Focused ion beam milling of carbon fibres

International Nuclear Information System (INIS)

Huson, Mickey G.; Church, Jeffrey S.; Hillbrick, Linda K.; Woodhead, Andrea L.; Sridhar, Manoj; Van De Meene, Allison M.L.

2015-01-01

A focused ion beam has been used to mill both individual carbon fibres as well as fibres in an epoxy composite, with a view to preparing flat surfaces for nano-indentation. The milled surfaces have been assessed for damage using scanning probe microscopy nano-indentation and Raman micro-probe analysis, revealing that FIB milling damages the carbon fibre surface and covers surrounding areas with debris of disordered carbon. The debris is detected as far as 100 μm from the milling site. The energy of milling as well as the orientation of the beam was varied and shown to have an effect when assessed by Raman spectroscopy. - Highlights: • Focused ion beam (FIB) milling was used to mill flat surfaces on carbon fibres. • Raman spectroscopy showed amorphous carbon was generated during FIB milling. • The amorphous debris is detected as far as 100 μm from the milling site. • This surface degradation was confirmed by nano-indentation experiments.

The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

NARCIS (Netherlands)

Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

2001-01-01

The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye

Nano-composite powders Ag-SnO2 prepared by reactive milling sintering and microstructural evolution

International Nuclear Information System (INIS)

Lorrain, Nathalie

2000-01-01

This work aims at controlling the synthesis and the sintering of nano-composite powders Ag-SnO 2 in order to obtain a dense and nano-structured material for electrical contact as a substitute of the toxic compound Ag - CdO. The powder is prepared by reactive milling from silver oxide (Ag 2 O) and silver bronze (Ag 3 Sn) powders. This process leads to a fine dispersion of silver and tin oxide nanometer sized particles. We first studied the mechanisms of reaction promoted by milling in vacuum and in air. A two-stage oxidation of tin in Ag 3 Sn occurs: during forced contact with Ag 2 O, tin oxidises in SnO, then in SnO 2 . In air, gaseous oxygen also participates to the oxidation of tin in SnO 2 but the reaction is slower because of the formation of silver carbonates from a reaction of Ag 2 O with CO 2 .Then the sintering behaviour of the nano-composite powder as a function of the compacting pressure and of the heating rate has been studied. We show: (i) a diffusion of pure silver towards porosity and free surfaces (exo-diffusion) which destroys the nano-structure and (ii) a severe de-densification. We show that the origin of these phenomena is due to carbonates on to the Ag 2 O starting powder, which are incorporated, in the milled Ag-SnO 2 powder in course of milling; during sintering, decomposition gases generate internal stresses. Low stresses lead to a diffusional creep with exo-diffusion whereas high stresses induce an intensive de-densification by local plastic deformation but no exo-diffusion. A modelling shows that exo-diffusion is limited by heating very quickly a strongly compacted powder that contains a high quantity of carbonates. The experimental results confirm the predictions of the model. Finally, we propose solutions allowing a full densification and a process for decreasing the tin oxide concentration. (author) [fr

Constant rate thermal analysis of a dehydrogenation reaction

Czech Academy of Sciences Publication Activity Database

Perejon, A.; Perez-Maqueda, L. A.; Sanchez-Jimenez, P.E.; Criado, J. M.; Murafa, Nataliya; Šubrt, Jan

2016-01-01

Roč. 6, č. 84 (2016), s. 81454-81460 ISSN 2046-2069 Institutional support: RVO:61388980 Keywords : solid-state reaction s * hydrogen storage properties * milled magnesium hydride Subject RIV: CA - Inorganic Chemistry Impact factor: 3.108, year: 2016

The influence of ball-milling time on the dehydrogenation properties of the NaAlH4-MgH2 composite

NARCIS (Netherlands)

Bendyna, J.K.; Dyjak, S.M.; Notten, P.H.L.

2015-01-01

The recently developed NaAlH4eMgH2 composite shows improved hydrogen-storage properties compared to MgH2 and NaAlH4. However, the dehydrogenation reaction rates are still too limited, hampering practical applications. Mechanical ball milling is broadly used to improve the dehydrogenation reaction

Finite element simulation of texture evolution and Swift effect in NiAl under torsion

Science.gov (United States)

Böhlke, Thomas; Glüge, Rainer; Klöden, Burghardt; Skrotzki, Werner; Bertram, Albrecht

2007-09-01

The texture evolution and the Swift effect in NiAl under torsion at 727 °C are studied by finite element simulations for two different initial textures. The material behaviour is modelled by an elastic-viscoplastic Taylor model. In order to overcome the well-known shortcomings of Taylor's approach, the texture evolution is also investigated by a representative volume element (RVE) with periodic boundary conditions and a compatible microstructure at the opposite faces of the RVE. Such a representative volume element takes into account the grain morphology and the grain interaction. The numerical results are compared with experimental data. It is shown that the modelling of a finite element based RVE leads to a better prediction of the final textures. However, the texture evolution path is not accounted for correctly. The simulated Swift effect depends much more on the initial orientation distribution than observed in experiment. Deviations between simulation and experiment may be due to continuous dynamic recrystallization.

Surface Quality of Staggered PCD End Mill in Milling of Carbon Fiber Reinforced Plastics

Directory of Open Access Journals (Sweden)

Guangjun Liu

2017-02-01

Full Text Available Machined surface quality determines the reliability, wear resistance and service life of carbon fiber reinforced plastic (CFRP workpieces. In this work, the formation mechanism of the surface topography and the machining defects of CFRPs are proposed, and the influence of milling parameters and fiber cutting angles on the surface quality of CFRPs is obtained, which can provide a reference for extended tool life and good surface quality. Trimming and slot milling tests of unidirectional CFRP laminates are performed. The surface roughness of the machined surface is measured, and the influence of milling parameters on the surface roughness is analyzed. A regression model for the surface roughness of CFRP milling is established. A significance test of the regression model is conducted. The machined surface topography of milling CFRP unidirectional laminates with different fiber orientations is analyzed, and the effect of fiber cutting angle on the surface topography of the machined surface is presented by using a digital super depth-of-field microscope and scanning electron microscope (SEM. To study the influence of fiber cutting angle on machining defects, the machined topography under different fiber orientations is analyzed. The slot milling defects and their formation mechanism under different fiber cutting angles are investigated.

Swarming, schooling, milling: phase diagram of a data-driven fish school model

Science.gov (United States)

Calovi, Daniel S.; Lopez, Ugo; Ngo, Sandrine; Sire, Clément; Chaté, Hugues; Theraulaz, Guy

2014-01-01

We determine the basic phase diagram of the fish school model derived from data by Gautrais et al (2012 PLoS Comput. Biol. 8 e1002678), exploring its parameter space beyond the parameter values determined experimentally on groups of barred flagtails (Kuhlia mugil) swimming in a shallow tank. A modified model is studied alongside the original one, in which an additional frontal preference is introduced in the stimulus/response function to account for the angular weighting of interactions. Our study, mostly limited to groups of moderate size (in the order of 100 individuals), focused not only on the transition to schooling induced by increasing the swimming speed, but also on the conditions under which a school can exhibit milling dynamics and the corresponding behavioural transitions. We show the existence of a transition region between milling and schooling, in which the school exhibits multistability and intermittence between schooling and milling for the same combination of individual parameters. We also show that milling does not occur for arbitrarily large groups, mainly due to a distance dependence interaction of the model and information propagation delays in the school, which cause conflicting reactions for large groups. We finally discuss the biological significance of our findings, especially the dependence of behavioural transitions on social interactions, which were reported by Gautrais et al to be adaptive in the experimental conditions.

Swarming, schooling, milling: phase diagram of a data-driven fish school model

International Nuclear Information System (INIS)

Calovi, Daniel S; Lopez, Ugo; Theraulaz, Guy; Ngo, Sandrine; Chaté, Hugues; Sire, Clément

2014-01-01

We determine the basic phase diagram of the fish school model derived from data by Gautrais et al (2012 PLoS Comput. Biol. 8 e1002678), exploring its parameter space beyond the parameter values determined experimentally on groups of barred flagtails (Kuhlia mugil) swimming in a shallow tank. A modified model is studied alongside the original one, in which an additional frontal preference is introduced in the stimulus/response function to account for the angular weighting of interactions. Our study, mostly limited to groups of moderate size (in the order of 100 individuals), focused not only on the transition to schooling induced by increasing the swimming speed, but also on the conditions under which a school can exhibit milling dynamics and the corresponding behavioural transitions. We show the existence of a transition region between milling and schooling, in which the school exhibits multistability and intermittence between schooling and milling for the same combination of individual parameters. We also show that milling does not occur for arbitrarily large groups, mainly due to a distance dependence interaction of the model and information propagation delays in the school, which cause conflicting reactions for large groups. We finally discuss the biological significance of our findings, especially the dependence of behavioural transitions on social interactions, which were reported by Gautrais et al to be adaptive in the experimental conditions. (paper)

Methanation of CO2 on Ni/Al2O3 in a Structured Fixed-Bed Reactor—A Scale-Up Study

Directory of Open Access Journals (Sweden)

Daniel Türks

2017-05-01

Full Text Available Due to the ongoing change of energy supply, the availability of a reliable high-capacity storage technology becomes increasingly important. While conventional large-scale facilities are either limited in capacity respective supply time or their extension potential is little (e.g., pumped storage power stations, decentralized units could contribute to energy transition. The concepts of PtX (power-to-X storage technologies and in particular PtG (power-to-gas aim at fixation of electric power in chemical compounds. CO2 hydrogenation (methanation is the foundation of the PtG idea as H2 (via electrolysis and CO2 are easily accessible. Methane produced in this way, often called substitute natural gas (SNG, is a promising solution since it can be stored in the existing gas grid, tanks or underground cavern storages. Methanation is characterized by a strong exothermic heat of reaction which has to be handled safely. This work aims at getting rid of extreme temperature hot-spots in a tube reactor by configuring the catalyst bed structure. Proof of concept studies began with a small tube reactor (V = 12.5 cm3 with a commercial 18 wt % Ni/Al2O3 catalyst. Later, a double-jacket tube reactor was built (V = 452 cm3, reaching a production rate of 50 L/h SNG. The proposed approach not only improves the heat management and process safety, but also increases the specific productivity and stability of the catalyst remarkably.

Yang-Mills gravity in biconformal space

International Nuclear Information System (INIS)

Anderson, Lara B; Wheeler, James T

2007-01-01

We write a gravity theory with Yang-Mills-type action using the biconformal gauging of the conformal group. We show that the resulting biconformal Yang-Mills gravity theories describe 4-dim, scale-invariant general relativity in the case of slowly changing fields. In addition, we systematically extend arbitrary 4-dim Yang-Mills theories to biconformal space, providing a new arena for studying flat-space Yang-Mills theories. By applying the biconformal extension to a 4-dim pure Yang-Mills theory with conformal symmetry, we establish a 1-1, onto mapping between a set of gravitational gauge theories and 4-dim, flat-space gauge theories

Study of the aluminothermic reduction of niobium pentoxide through thermal analysis experiments and high energy milling processing

Directory of Open Access Journals (Sweden)

Claudio Parra De Lazzari

2007-06-01

Full Text Available Aluminothermic reduction of niobium pentoxide was studied through thermal analysis techniques such as differential thermal analysis (DTA and thermogravimetry (TG as well as through high energy milling processing. Reactants mixtures were composed by powders of Nb2O5 and Al. In the case of DTA-TG experiments, different molar ratios Nb2O5:Al were heated in a dynamic atmosphere of synthetic air under controlled conditions. The high energy milling runs were carried out via SPEX vibratory mill under argon atmosphere and with milling power equal to 7:1 (ratio of mass of balls to mass of mixture with 10 pct excess of Al over the stoichiometric mass of aluminum necessary. In both kinds of experiments, X ray diffraction was used in order to identify the products of reaction. From DTA-TG experiments, it was possible to determine the experimental value of the enthalpy change (-595.9 kJ.mol-1, which is near to the theoretical one. From the milling experiments, it was possible to verify the possibility of the occurance of aluminothermic reducion of niobium pentoxide via this kind of processing.

Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

2016-05-23

Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

Stoichiometric control for heteroepitaxial growth of smooth ɛ-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

Science.gov (United States)

Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

2017-07-01

Epitaxial ɛ-Ga2O3 thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2θ-ω and φ scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) ɛ-Ga2O3 [10\\bar{1}0] ∥ (0001)AlN[10\\bar{1}0]. The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55-3.7 eV; however, no band-edge emission was observed.

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Solid-solid and gas-solid interactions induced during high-energy milling to produce PbTe nanopowders

Energy Technology Data Exchange (ETDEWEB)

Rojas-Chavez, H., E-mail: rojas_hugo@ittlahuac2.edu.mx [Instituto Tecnologico de Tlahuac - II (Mexico); Reyes-Carmona, F. [Facultad de Quimica - UNAM (Mexico); Garibay-Febles, V. [Instituto Mexicano del Petroleo, Laboratorio de Microscopia Electronica de Ultra Alta Resolucion (Mexico); Jaramillo-Vigueras, D. [Centro de Investigacion e Innovacion Tecnologica - IPN (Mexico)

2013-05-15

Transformations from precursors to nanoparticles by high-energy milling are promoted by two major driving forces, namely physical and/or chemical. While the former has been difficult to trace since stress, strain and recovery may occur almost simultaneously during milling, the latter has been sequentially followed as an evolution from precursors to intermediate phases and thereof to high purity nanocrystals. The specific objective of this work is to discern how solid-solid and partially solid-gas reactions manifest themselves correspondingly as a short-range diffusion through an interface or how vapor species, as a subliming phenomenon, grows as a different phase on an active local surface. These series of changes were traced by sub-cooling the as-milled powders extracted during a milling cycle. Through this experimental technique, samples were electron microscopically analyzed and where it was required, selected area electron diffraction images were obtained. High-resolution transmission electron microscopy results, unambiguously, confirm that nanocrystals in the last stage show a cubic morphology which average size distributions are around 17 nm.

Influence of rice sample preparation and milling procedures on milling quality appraisals

Science.gov (United States)

The objective of this research was to investigate the effect of sample preparation and milling procedure on milling quality appraisals of rough rice. Samples of freshly harvested medium-grain rice (M202) with different initial moisture contents (MCs) ranging from 20.2% to 25.1% (w.b.) were used for...

Influence of milling process on efavirenz solubility

Directory of Open Access Journals (Sweden)

Erizal Zaini

2017-01-01

Full Text Available Introduction: The aim of this study was to investigate the influence of the milling process on the solubility of efavirenz. Materials and Methods: Milling process was done using Nanomilling for 30, 60, and 180 min. Intact and milled efavirenz were characterized by powder X-ray diffraction, scanning electron microscopy (SEM, spectroscopy infrared (IR, differential scanning calorimetry (DSC, and solubility test. Results: The X-ray diffractogram showed a decline on peak intensity of milled efavirenz compared to intact efavirenz. The SEM graph depicted the change from crystalline to amorphous habit after milling process. The IR spectrum showed there was no difference between intact and milled efavirenz. Thermal analysis which performed by DSC showed a reduction on endothermic peak after milling process which related to decreasing of crystallinity. Solubility test of intact and milled efavirenz was conducted in distilled water free CO2with 0.25% sodium lauryl sulfate media and measured using high-performance liquid chromatography method with acetonitrile: distilled water (80:20 as mobile phases. The solubility was significantly increased (P < 0.05 after milling processes, which the intact efavirenz was 27.12 ± 2.05, while the milled efavirenz for 30, 60, and 180 min were 75.53 ± 1.59, 82.34 ± 1.23, and 104.75 ± 0.96 μg/mL, respectively. Conclusions: Based on the results, the solubility of efavirenz improved after milling process.

Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

Science.gov (United States)

Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

2016-08-01

This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

International Nuclear Information System (INIS)

Bernard, F; Basrour, S; Casset, F; Danel, J S; Chappaz, C

2016-01-01

This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm 2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm 2 . Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system. (paper)

Tool Wear Analysis on Five-Axis Flank Milling for Curved Shape Part – Full Flute and Ground Shank End Mill

Directory of Open Access Journals (Sweden)

Syahrul Azwan Sundi

2017-01-01

Full Text Available This paper is a study on full flute (extra-long tool and ground shank end mill wear analysis by utilizing five-axis CNC to implement flank milling strategy on curved shape part. Five-axis machining eases the user to implement variations of strategy such as flank milling. Flank milling is different from point milling. Point milling cuts materials by using the tip of the tool whereas the flank milling uses the cutting tool body to cut material. The type of cutting tool used was end mill 10 mm diameter with High Speed Steel (HSS material. One factor at a time was utilized to analyze the overall data. Feed rate and spindle speed were the two main factors that been set up equally for both full flute and ground shank end mill. At the end of this research, the qualitative analysis based on tool wear between full flute and ground shank end mill is observed. Generally, both types of cutting tools showed almost the same failure indication such as broken edge or chipped off edge, formation of pinned hole on the surface and serration formation or built-up edge (BUE on the primary flute. However, the results obtained from the enlarged images which were captured by Optical Microscope indicated that, the ground shank end mill is better than the full flute end mill.

Particle deformation during stirred media milling

Science.gov (United States)

Hamey, Rhye Garrett

Production of high aspect ratio metal flakes is an important part of the paint and coating industry. The United States Army also uses high aspect ratio metal flakes of a specific dimension in obscurant clouds to attenuate infrared radiation. The most common method for their production is by milling a metal powder. Ductile metal particles are initially flattened in the process increasing the aspect ratio. As the process continues, coldwelding of metal flakes can take place increasing the particle size and decreasing the aspect ratio. Extended milling times may also result in fracture leading to a further decrease in the particle size and aspect ratio. Both the coldwelding of the particles and the breakage of the particles are ultimately detrimental to the materials performance. This study utilized characterization techniques, such as, light scattering and image analysis to determine the change in particle size as a function of milling time and parameters. This study proved that a fundamental relationship between the milling parameters and particle deformation could be established by using Hertz's theory to calculate the stress acting on the aluminum particles. The study also demonstrated a method by which milling efficiency could be calculated, based on the amount of energy required to cause particle deformation. The study found that the particle deformation process could be an energy efficient process at short milling times with milling efficiency as high as 80%. Finally, statistical design of experiment was used to obtain a model that related particle deformation to milling parameters, such as, rotation rate and milling media size.

Learning Activity Packets for Milling Machines. Unit I--Introduction to Milling Machines.

Science.gov (United States)

Oklahoma State Board of Vocational and Technical Education, Stillwater. Curriculum and Instructional Materials Center.

This learning activity packet (LAP) outlines the study activities and performance tasks covered in a related curriculum guide on milling machines. The course of study in this LAP is intended to help students learn to identify parts and attachments of vertical and horizontal milling machines, identify work-holding devices, state safety rules, and…

Allergic contact dermatitis from a paper mill slimicide containing 2-bromo-4'-hydroxyacetophenone

DEFF Research Database (Denmark)

Jensen, Charlotte D; Andersen, Klaus E

2003-01-01

Slimicides are biocidal products used in paper mills to inhibit the proliferation of slime-forming microorganisms that would otherwise spoil the paper products. A laboratory technician working at a paper mill had recurring dermatitis related to contact with the slimicide Busan 1130. We report...... the first case of allergic contact dermatitis from the slimicide Busan 1130. Diagnostic patch testing was performed with solutions of Busan 1130 and its active ingredient, 2-bromo-4'-hydroxyacetophenone (BHAP). Twenty-five controls were also tested. The patient showed a ++ reaction to 0.1% Busan 1130...... aqueous solution and 0.01% BHAP in ethanol. All controls were negative. The patient had recurrent allergic contact dermatitis from exposure to BHAP contained in the slimicide Busan 1130....

Allergic contact dermatitis from a paper mill slimicide containing 2-bromo-4'-hydroxyacetophenone.

Science.gov (United States)

Jensen, Charlotte D; Andersen, Klaus E

2003-03-01

Slimicides are biocidal products used in paper mills to inhibit the proliferation of slime-forming microorganisms that would otherwise spoil the paper products. A laboratory technician working at a paper mill had recurring dermatitis related to contact with the slimicide Busan 1130. We report the first case of allergic contact dermatitis from the slimicide Busan 1130. Diagnostic patch testing was performed with solutions of Busan 1130 and its active ingredient, 2-bromo-4'-hydroxyacetophenone (BHAP). Twenty-five controls were also tested. The patient showed a ++ reaction to 0.1% Busan 1130 aqueous solution and 0.01% BHAP in ethanol. All controls were negative. The patient had recurrent allergic contact dermatitis from exposure to BHAP contained in the slimicide Busan 1130.

Analysis of the influence of two different milling processes in the properties of precursor powder and [Beta]-TCP cement

International Nuclear Information System (INIS)

Cardoso, H.A.I.; Pereira, C.H.R.; Zavaglia, C.A.C.; Motisuke, M.

2011-01-01

There are several characteristics that put calcium phosphate cements in evidence, like its bioactivity and in vivo resorption. The influence of two milling processes in the morphological properties of the [beta]-tricalcium phosphate powder, [beta]-TCP, and in the mechanical properties of the cement were analyzed. The powder was obtained by solid state reaction of CaCO_3 and CaHPO_4 at 1050 ° C. It showed high phase purity and absence of toxic elements. The powder was processed in ball mill (A) and high-energy vibratory mill (B), with posterior analyze by SEM and particle size distribution. The powders showed different average and distribution of grain size. Finally, the cement obtained by the process (B) showed values of axial tensile strength significantly greater than that obtained by the process (A). The milling process (B) is much more efficient than the process (A). (author)

Mechanochemical Synthesis of Nanocrystalline CdS in a Laboratory and Industrial Mill

Directory of Open Access Journals (Sweden)

Eberhard Gock

2004-12-01

Full Text Available Nanocrystalline materials have been of interest of more than 20 years and this interest is still increasing. The preparation and characterization of different chalcogenides have attracted a considerable attention due to their important nonlinear properties, luminiscent properties and other important physical and chemical properties. The main cause is in their unusual properties based on the high concentration of atoms in interfacial structures and the relatively simple ways of their preparation. Nanoparticles of semiconductors have many potential applications in the area of advanced materials. These materials can be synthesized via solid state reactions where the recovery degree can be strongly enhanced by the intervention of mechanical activation. Mechanochemical synthesis belongs among the synthesis route which can effectively control and regulate the course of solid state reactions.This paper describes structural and surface properties of cadmium sulphide nanoparticles synthesized in a planetary mill and in an eccentric vibratory mill. The main aim of this paper was to illustrate the potential of this technique for the large-scale production of CdS nanopowder.CdS nanoparticles were successfully synthesized by the mechanochemical route from the cadmium acetate and natrium sulphide. Structure properties of the as-prepared products were characterized by X-ray powder diffraction. X-ray diffraction patterns reveal the crystalline nature of CdS nanoparticles. Hexagonal ƒ¿-CdS greenockite together with cubic hawleyite ƒÀ-CdS are present among the products of mechanochemical synthesis. The methods of SEM, particle size analysis and low temperature nitrogen sorption were used to analyze the surface composition. The SEM measurements show the aggregates of small nanocrystals in which particle sizes of 5-9 nm were estimated by ScherrerLs formula.The cadmium sulphide nanoparticles are obtained in the simple step, making the process attractive for

Ion implantation of Cd and Ag into AlN and GaN

CERN Document Server

Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

2012-01-01

GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg (Germany)

2011-03-15

We present metal organic vapor phase epitaxy growth of semi-polar GaN structures on high index silicon surfaces. The crystallographic structure of GaN grown on Si(112), (115), and (117) substrates is investigated by X-ray analysis and scanning electron microscopy. X-ray diffraction was performed in Bragg Brentano geometry as well as pole figure measurements. The results demonstrate that the orientation of GaN crystallites on Si is significantly dependent on thickness of the AlN seeding layer and TMAl-flow rate. We observe that the crystallographic structures of GaN by applying thin AlN seeding layers grown with high TMAl-flow rate depend on Si surface direction while they are independent for thicker layers. By applying such seeding layer we obtain single crystalline semi-polar GaN on Si(112), while GaN structures grown with the same growth parameters on Si(117) show four components of GaN(0002). (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Nanocrystalline TiAl powders synthesized by high-energy ball milling: effects of milling parameters on yield and contamination

International Nuclear Information System (INIS)

Bhattacharya, Prajina; Bellon, Pascal; Averback, Robert S.; Hales, Stephen J.

2004-01-01

High-energy ball milling was employed to produce nanocrystalline Ti-Al powders. As sticking of the powders can be sufficiently severe to result in a near zero yield, emphasis was placed on varying milling conditions so as to increase the yield, while avoiding contamination of the powders. The effects of milling parameters such as milling tools, initial state of the powders and addition of process control agents (PCA's) were investigated. Cyclohexane, stearic acid and titanium hydride were used as PCA's. Milling was conducted either in a Cr-steel vial with C-steel balls, or in a tungsten carbide (WC) vial with WC balls, using either elemental or pre-alloyed powders. Powder samples were characterized using X-ray diffraction, scanning and transmission electron microscopy. In the absence of PCA's mechanical alloying in a WC vial and attrition milling in a Cr-steel vial were shown to lead to satisfactory yields, about 65-80%, without inducing any significant contamination of the powders. The results suggest that sticking of the powders on to the milling tools is correlated with the phase evolution occurring in these powders during milling

The progress in the researches for uranium mill tailings cleaning treatment and no-waste uranium ore milling processes

International Nuclear Information System (INIS)

Wang Jintang

1990-01-01

The production of uranium mill tailings and their risk assessment are described. The moethods of uranium mill tailings disposal and management are criticized and the necessity of the researches for uranium mill tailings cleaning treatment and no-wasle uranium ore milling process are demonstrated. The progress for these researches in China and other countries with uranium production is reviewed, and the corresponding conclusions are reported

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

International Nuclear Information System (INIS)

Park, Chang Seo; Cho, Byung Jin; Balasubramanian, N.; Kwong, Dim-Lee

2004-01-01

We evaluated the feasibility of using an ultra thin aluminum nitride (AlN) buffer layer for dual metal gates CMOS process. Since the buffer layer should not affect the thickness of gate dielectric, it should be removed or consumed during subsequent process. In this work, it was shown that a thin AlN dielectric layer would be reacted with initial gate metals and would be consumed during subsequent annealing, resulting in no increase of equivalent oxide thickness (EOT). The reaction of AlN layer with tantalum (Ta) and hafnium (Hf) during subsequent annealing, which was confirmed with X-ray photoelectron spectroscopy (XPS) analysis, shifted the flat-band voltage of AlN buffered MOS capacitors. No contribution to equivalent oxide thickness (EOT) was also an indication showing the full consumption of AIN, which was confirmed with TEM analysis. The work functions of gate metals were modulated through the reaction, suggesting that the consumption of AlN resulted in new thin metal alloys. Finally, it was found that the barrier heights of the new alloys were consistent with their work functions

Effect of metal ion and ball milling on the electrochemical properties of M0.5TiOPO4 (M = Ni, Cu, Mg)

International Nuclear Information System (INIS)

Godbole, Vikram A.; Villevieille, Claire; Novák, Petr

2013-01-01

Various metal titanium oxyphosphates, M 0.5 TiOPO 4 (M = Ni, Cu, Mg) were synthesized via modified solution route synthesis. The as synthesized M 0.5 TiOPO 4 (M = Ni, Cu, Mg) were electrochemically tested using galvanostatic cycling, cyclic voltammetry, and rate performance measurements in order to investigate the effect of metal ion (M) on the electrochemical performance of this family of materials. All the studied materials reacted with 3 Li + during the 1st lithiation showing reaction plateaus at different potentials versus Lithium. Similar studies were performed on M 0.5 TiOPO 4 (M = Ni, Cu, Mg) samples with smaller particle size, obtained via ball milling, in order to understand the effect of particle size on the electrochemistry of the materials. The ball milled samples delivered higher specific charge during the 1st cycle showing reaction plateaus at different potentials, poorer capacity retention, and poorer rate capability as compared to the as synthesized ones. This was attributed to a change in morphology and particle size of the samples upon ball milling. Amongst all the tested materials, the as synthesized Cu 0.5 TiOPO 4 showed the best electrochemistry. The ball milled Mg 0.5 TiOPO 4 reacted with ∼5.5 Li + during 1st lithiation (as compared to 3 Li + expected from this family of compounds) and 3.3 Li + during the 1st delithiation (rather than the expected 2 Li + ). This suggests a reaction mechanism where Mg 0.5 TiOPO 4 undergoes a phase transformation forming Mg 0 , which reversibly alloys with 2.5 extra Li + . Thus the electrochemical cycling of Mg 0.5 TiOPO 4 gives insights into the reaction mechanism in this family of materials

75 FR 49524 - Woodland Mills Corporation, Mill Spring, NC; Notice of Affirmative Determination Regarding...

Science.gov (United States)

2010-08-13

... DEPARTMENT OF LABOR Employment and Training Administration [TA-W-73,695] Woodland Mills Corporation, Mill Spring, NC; Notice of Affirmative Determination Regarding Application for Reconsideration By application dated July 22, 2010, petitioners requested administrative [[Page 49525

Cryogenic milling for the fabrication of high J{sub c} MgB{sub 2} bulk superconductors

Energy Technology Data Exchange (ETDEWEB)

Kim, D. N.; Kang, M. O.; Park, H. W. [Korea University of Technology and Education, Cheonan (Korea, Republic of); Jun, B. H.; Kim, C. J. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2017-06-15

Cryogenic milling which is a combined process of low-temperature treatment and mechanical milling was applied to fabricate high critical current density (J{sub c}) MgB{sub 2} bulk superconductors. Liquid nitrogen was used as a coolant, and no solvent or lubricant was used. Spherical Mg (6-12 μm, 99.9 % purity) and plate-like B powder (⁓ 1 μm, 97 % purity) were milled simultaneously for various time periods (0, 2, 4, 6 h) at a rotating speed of 500 rpm using ZrO{sub 2} balls. The (Mg{sup +2B}) powders milled were pressed into pellets and heat-treated at 700°C for 1 h in flowing argon. The use of cryomilled powders as raw materials promoted the formation reaction of superconducting MgB{sub 2}, reduced the grain size of MgB{sub 2}, and suppressed the formation of impurity MgO. The superconducting critical temperature (T{sub c}) of MgB{sub 2} was not influenced as the milling time (t) increased up to 6 h. Meanwhile, the critical current density (J{sub c}) of MgB{sub 2} increased significantly when t increased to 4 h. When t increased further to 6 h, however, Jc decreased. The J{sub c} enhancement of MgB{sub 2} by cryogenic milling is attributed to the formation of the fine grain MgB{sub 2} and a suppression of the MgO formation.

Effect of graphite addition into mill scale waste as a potential bipolar plates material of proton exchange membrane fuel cells

Science.gov (United States)

Khaerudini, D. S.; Prakoso, G. B.; Insiyanda, D. R.; Widodo, H.; Destyorini, F.; Indayaningsih, N.

2018-03-01

Bipolar plates (BPP) is a vital component of proton exchange membrane fuel cells (PEMFC), which supplies fuel and oxidant to reactive sites, remove reaction products, collects produced current and provide mechanical support for the cells in the stack. This work concerns the utilization of mill scale, a by-product of iron and steel formed during the hot rolling of steel, as a potential material for use as BPP in PEMFC. On the other hand, mill scale is considered a very rich in iron source having characteristic required such as for current collector in BPP and would significantly contribute to lower the overall cost of PEMFC based fuel cell systems. In this study, the iron reach source of mill scale powder, after sieving of 150 mesh, was mechanically alloyed with the carbon source containing 5, 10, and 15 wt.% graphite using a shaker mill for 3 h. The mixed powders were then pressed at 300 MPa and sintered at 900 °C for 1 h under inert gas atmosphere. The structural changes of powder particles during mechanical alloying and after sintering were studied by X-ray diffractometry, optical microscopy, scanning electron microscopy, and microhardness measurement. The details of the presence of iron, carbon, and iron carbide (Fe-C) as the products of reactions as well as sufficient mechanical strength of the sintered materials were presented in this report.

Black holes with Yang-Mills hair

International Nuclear Information System (INIS)

Kleihaus, B.; Kunz, J.; Sood, A.; Wirschins, M.

1998-01-01

In Einstein-Maxwell theory black holes are uniquely determined by their mass, their charge and their angular momentum. This is no longer true in Einstein-Yang-Mills theory. We discuss sequences of neutral and charged SU(N) Einstein-Yang-Mills black holes, which are static spherically symmetric and asymptotically flat, and which carry Yang-Mills hair. Furthermore, in Einstein-Maxwell theory static black holes are spherically symmetric. We demonstrate that, in contrast, SU(2) Einstein-Yang-Mills theory possesses a sequence of black holes, which are static and only axially symmetric

Pulp mill as an energy producer

International Nuclear Information System (INIS)

Kaulamo, O.

1998-01-01

The recovery boilers of pulp mills are today the most significant producers of wood energy. The power-to-heat ratio of the power plant process, i.e., power yield, is poor in existing applications. In the study, an alternative of improving the power yield of conventional pulp mills significantly was studied by applying solutions used in power plants to a pulp mill. Extensive conversion of wood energy into electricity is possible only in the recovery boiler of the pulp mill and in a large combustion boiler of bark, wood waste and wood chips integrated to this boiler. Hence, the harvest and transports of wood raw materials, i.e. pulp wood and energy wood, are integrated, and the fraction going to cook and the energy wood fraction are separated at the pulp mill. The method guarantees competitive supply of energy wood. As a result a SELLUPOWER mill was designed, where the recovery boiler combusting black liquor and the large power plant boiler combusting energy wood are integrated to one unit and constructed to a power plant process with a high power-to-heat ratio. Necessary technical solutions, project costs and economical feasibility compared to a conventional pulp mill were determined, and the effect of different production-economical parameters was also studied. (orig.)

Emission spectra from AlN and GaN doped with rare earth elements

International Nuclear Information System (INIS)

Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

2006-01-01

Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

Colorado's prospectus on uranium milling

International Nuclear Information System (INIS)

Hazle, A.J.; Franz, G.A.; Gamewell, R.

1982-01-01

The first part of this paper will discuss Colorado's control of uranium mill tailings under Titles I and II of the Uranium Mill Tailings Radiation Control Act of 1978. Colorado has a legacy of nine inactive mill sites requiring reclamation under Title I, and two presently active plus a number of new mill proposals which must be regulated in accordance with Title II. Past failures in siting and control on the part of federal jurisdictions have left the state with a heavy legacy requiring extensive effort to address impacts to the state's environment and population. The second part of this paper will discuss the remedial action programme authorized under Public Law 92-314 for Mesa Country, where lack of federal control led to the dispersal of several hundred thousand tons of uranium mill tailings on thousands of properties, including hundreds of homes, schools and other structures. Successful completion of the State efforts under both programmes will depend on a high level of funding and on the maintenance of adequate regulatory standards. (author)

Understanding dental CAD/CAM for restorations - dental milling machines from a mechanical engineering viewpoint. Part A: chairside milling machines.

Science.gov (United States)

Lebon, Nicolas; Tapie, Laurent; Duret, Francois; Attal, Jean-Pierre

2016-01-01

The dental milling machine is an important device in the dental CAD/CAM chain. Nowadays, dental numerical controlled (NC) milling machines are available for dental surgeries (chairside solution). This article provides a mechanical engineering approach to NC milling machines to help dentists understand the involvement of technology in digital dentistry practice. First, some technical concepts and definitions associated with NC milling machines are described from a mechanical engineering viewpoint. The technical and economic criteria of four chairside dental NC milling machines that are available on the market are then described. The technical criteria are focused on the capacities of the embedded technologies of these milling machines to mill both prosthetic materials and types of shape restorations. The economic criteria are focused on investment costs and interoperability with third-party software. The clinical relevance of the technology is assessed in terms of the accuracy and integrity of the restoration.

Ti{sub 2}Al(O,N) formation by solid-state reaction between substoichiometric TiN thin films and Al{sub 2}O{sub 3} (0001) substrates

Energy Technology Data Exchange (ETDEWEB)

Persson, P.O.A., E-mail: perpe@ifm.liu.se; Hoeglund, C.; Birch, J.; Hultman, L.

2011-02-01

Titanium nitride TiN{sub x} (0.1 {<=} x {<=} 1) thin films were deposited onto Al{sub 2}O{sub 3}(0001) substrates using reactive magnetron sputtering at substrate temperatures (T{sub s}) ranging from 800 to 1000 {sup o}C and N{sub 2} partial pressures (pN{sub 2}) between 13.3 and 133 mPa. It is found that Al and O from the substrates diffuse into the substoichiometric TiN{sub x} films during deposition. Solid-state reactions between the film and substrate result in the formation of Ti{sub 2}O and Ti{sub 3}Al domains at low N{sub 2} partial pressures, while for increasing pN{sub 2}, the Ti{sub 2}AlN MAX phase nucleates and grows together with TiN{sub x}. Depositions at increasingly stoichiometric conditions result in a decreasing incorporation of substrate species into the growing film. Eventually, a stoichiometric deposition gives a stable TiN(111) || Al{sub 2}O{sub 3}(0001) structure without the incorporation of substrate species. Growth at T{sub s} 1000 {sup o}C yields Ti{sub 2}AlN(0001), leading to a reduced incorporation of substrate species compared to films grown at 900 {sup o}C, which contain also Ti{sub 2}AlN(101-bar3) grains. Finally, the Ti{sub 2}AlN domains incorporate O, likely on the N site, such that a MAX phase oxynitride Ti{sub 2}Al(O,N) is formed. The results were obtained by a combination of structural methods, including X-ray diffraction and (scanning) transmission electron microscopy, together with spectroscopy methods, which comprise elastic recoil detection analysis, energy dispersive X-ray spectroscopy, and electron energy loss spectroscopy.

Effects of milling method and calcination condition on phase and morphology characteristics of Mg4Nb2O9 powders

International Nuclear Information System (INIS)

Wongmaneerung, R.; Sarakonsri, T.; Yimnirun, R.; Ananta, S.

2006-01-01

Magnesium niobate, Mg 4 Nb 2 O 9 , powders has been synthesized by a solid-state reaction. Both conventional ball- and rapid vibro-milling have been investigated as milling methods, with the formation of the Mg 4 Nb 2 O 9 phase investigated as a function of calcination conditions by DTA and XRD. The particle size distribution of the calcined powders was determined by laser diffraction technique, while morphology, crystal structure and phase composition were determined via a combination of SEM, TEM and EDX techniques. The type of milling method together with the designed calcination condition was found to show a considerable effect on the phase and morphology evolution of the calcined Mg 4 Nb 2 O 9 powders. It is seen that optimization of calcination conditions can lead to a single-phase Mg 4 Nb 2 O 9 in both milling methods. However, the formation temperature and dwell time for single-phase Mg 4 Nb 2 O 9 powders were lower with the rapid vibro-milling technique

John Stuart Mill: utilitarismo e liberalismo = John Stuart Mill: utilitarianism and liberalism

Directory of Open Access Journals (Sweden)

Simões, Mauro Cardoso

2013-01-01

Full Text Available Meu objetivo, neste trabalho, é investigar a compatibilidade das teses utilitaristas e liberais de John Stuart Mill. Apresentarei, inicialmente, os principais críticos da filosofia moral e política de Mill, para os quais o discípulo de Bentham teria abandonado o utilitarismo ou, ainda, não esclarecido suficientemente seu princípio da liberdade, o que o tornaria um pensador assistemático e inconsistente. Minha tese é contrária a tais interpretações, uma vez que sustenta ser Mill consistente. Em seguida, defenderei uma interpretação do princípio da liberdade e da individualidade, procurando demonstrar que seu utilitarismo é compatível com seu liberalismo

The cross section measurements for the 51V(n, α)48Sc and 51V(n,p)51Ti reactions

International Nuclear Information System (INIS)

Hu Shangbin; Kong Xiangzhong; Yang Jingkang

1999-01-01

The cross sections for 51 V(n, α) 48 Sc and 51 V(n,p) 51 Ti have been measured by using the activation method relative to the cross sections of 27 Al(n, α) 24 Na in the neutron energy range 13.4 --14.8 MeV. The results are compared with the published data. The neutron energies were determined by the method of cross section ratios for the reactions 90 Zr(n.2n) 89 Zr by 93 Nb(n,2n) 92m Nb

Optimization of FIB milling for rapid NEMS prototyping

DEFF Research Database (Denmark)

Malm, Bjarke; Petersen, Dirch Hjorth; Lei, Anders

2011-01-01

We demonstrate an optimized milling technique to focused ion beam (FIB) milling in template silicon membranes for fast prototyping of nanoelectromechanical systems (NEMS). Using a single-pass milling strategy the highly topology dependent sputtering rate is boosted and shorter milling time...... is achieved. Drift independence is obtained for small critical features using a radial scan strategy, and a back scan routine ensures minimal line width deviation removing redeposited material. Milling a design similar to a nano four-point probe with a pitch down to 400nm we display what optimized FIB milling...

Yang-Mills theory for non-semisimple groups

CERN Document Server

Nuyts, J; Nuyts, Jean; Wu, Tai Tsun

2003-01-01

For semisimple groups, possibly multiplied by U(1)'s, the number of Yang-Mills gauge fields is equal to the number of generators of the group. In this paper, it is shown that, for non-semisimple groups, the number of Yang-Mills fields can be larger. These additional Yang-Mills fields are not irrelevant because they appear in the gauge transformations of the original Yang-Mills fields. Such non-semisimple Yang-Mills theories may lead to physical consequences worth studying. The non-semisimple group with only two generators that do not commute is studied in detail.

Chevron's Panna Maria mill process description

International Nuclear Information System (INIS)

Anon.

1979-01-01

Key features of Chevron's Uranium Mill located near Panna Maria, Texas, are described. The mill is designed to process a nominal 2500 dry tons/day of uranium bearing ore containing 15% uncombined moisture. The following operations at the mill are highlighted: ore receiving, grinding, leaching, countercurrent decantation and tailings disposal, filtering, solvent extraction, solvent stripping, precipitation, drying, and packaging

Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics

Directory of Open Access Journals (Sweden)

Shin H.

2015-01-01

Full Text Available Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN ceramics was investigated under the constraint of total sintering additives (Y2O3 and Ga2O3 of 4.5 wt%. Ga was detected in the AlN grain as well as the grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary crystalline phases in all of the investigated compositions. As the substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase decreased while that of YAlO3 was more or less similar. Neither additional secondary phases was identified, nor was the sinterability inhibited by the Ga2O3 addition; the linear shrinkage and apparent density were above 20 percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance and the elastic modulus generally decreased whereas the Poisson ratio increased significantly. The dielectric constant and the loss tangent of 4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63 and 0.003, respectively.

Degradation and biodegradability improvement of the olive mill wastewater by peroxi-electrocoagulation/electrooxidation-electroflotation process with bipolar aluminum electrodes.

Science.gov (United States)

Esfandyari, Yahya; Mahdavi, Yousef; Seyedsalehi, Mahdi; Hoseini, Mohammad; Safari, Gholam Hossein; Ghozikali, Mohammad Ghanbari; Kamani, Hossein; Jaafari, Jalil

2015-04-01

Olive mill wastewater is considered as one of the most polluting effluents of the food industry and constitutes a source of important environmental problems. In this study, the removal of pollutants (chemical oxygen demand (COD), biochemical oxygen demand (BOD5), polyphenols, turbidity, color, total suspended solids (TSS), and oil and grease) from olive oil mill processing wastewater by peroxi-electrocoagulation/electrooxidation-electroflotation process with bipolar aluminum electrodes was evaluated using a pilot continuous reactor. In the electrochemical unit, aluminum (Al), stainless steel, and RuO2/Ti plates were used. The effects of pH, hydrogen peroxide doses, current density, NaCl concentrations, and reaction times were studied. Under optimal conditions of pH 4, current density of 40 mA/m(2), 1000 mg/L H2O2, 1 g/L NaCl, and 30-min reaction time, the peroxi-electrochemical method yielded very effective removal of organic pollution from the olive mill wastewater diluted four times. The treatment process reduced COD by 96%, BOD5 by 93.6%, total, polyphenols by 94.4%, color by 91.4%, turbidity by 88.7, suspended solids by 97% and oil and grease by 97.1%. The biodegradability index (BOD5/COD) increased from 0.29 to 0.46. Therefore, the peroxi-electrocoagulation/electrooxidation-electroflotation process is considered as an effective and feasible process for pre-treating olive mill wastewater, making possible a post-treatment of the effluent in a biological system.

Galilean Yang-Mills theory

Energy Technology Data Exchange (ETDEWEB)

Bagchi, Arjun [Center for Theoretical Physics, Massachusetts Institute of Technology,77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Basu, Rudranil [Saha Institute of Nuclear Physics,Block AF, Sector 1, Bidhannagar, Kolkata 700068 (India); Kakkar, Ashish [Indian Institute of Science Education and Research,Dr Homi Bhabha Road, Pashan. Pune 411008 (India); Mehra, Aditya [Indian Institute of Science Education and Research,Dr Homi Bhabha Road, Pashan. Pune 411008 (India); Van Swinderen Institute for Particle Physics and Gravity, University of Groningen, Nijenborgh 4, 9747 AG Groningen (Netherlands)

2016-04-11

We investigate the symmetry structure of the non-relativistic limit of Yang-Mills theories. Generalising previous results in the Galilean limit of electrodynamics, we discover that for Yang-Mills theories there are a variety of limits inside the Galilean regime. We first explicitly work with the SU(2) theory and then generalise to SU(N) for all N, systematising our notation and analysis. We discover that the whole family of limits lead to different sectors of Galilean Yang-Mills theories and the equations of motion in each sector exhibit hitherto undiscovered infinite dimensional symmetries, viz. infinite Galilean Conformal symmetries in D=4. These provide the first examples of interacting Galilean Conformal Field Theories (GCFTs) in D>2.

Galilean Yang-Mills theory

International Nuclear Information System (INIS)

Bagchi, Arjun; Basu, Rudranil; Kakkar, Ashish; Mehra, Aditya

2016-01-01

We investigate the symmetry structure of the non-relativistic limit of Yang-Mills theories. Generalising previous results in the Galilean limit of electrodynamics, we discover that for Yang-Mills theories there are a variety of limits inside the Galilean regime. We first explicitly work with the SU(2) theory and then generalise to SU(N) for all N, systematising our notation and analysis. We discover that the whole family of limits lead to different sectors of Galilean Yang-Mills theories and the equations of motion in each sector exhibit hitherto undiscovered infinite dimensional symmetries, viz. infinite Galilean Conformal symmetries in D=4. These provide the first examples of interacting Galilean Conformal Field Theories (GCFTs) in D>2.

Prediction and characterization of heat-affected zone formation due to neighboring nickel-aluminum multilayer foil reaction

Energy Technology Data Exchange (ETDEWEB)

Adams, David P. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Hirschfeld, Deidre A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Hooper, Ryan J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Manuel, Michelle V. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

2015-09-01

Reactive multilayer foils have the potential to be used as local high intensity heat sources for a variety of applications. Much of the past research effort concerning these materials have focused on understanding the structure-property relationships of the foils that govern the energy released during a reaction. To enhance the ability of researchers to more rapidly develop technologies based on reactive multilayer foils, a deeper and more predictive understanding of the relationship between the heat released from the foil and microstructural evolution in the neighboring materials is needed. This work describes the development of a numerical model for the purpose of evaluating new foil-substrate combinations for screening and optimization. The model is experimentally validated using a commercially available Ni-Al multilayer foils and different alloys.

Thermophysical Properties of Cold and Vacuum Plasma Sprayed Cu-Cr-X Alloys, NiAl and NiCrAlY Coatings. Part 2; Specific Heat Capacity

Science.gov (United States)

Raj, S. V.

2017-01-01

Part I of the paper discussed the temperature dependencies of the electrical resistivities, thermal conductivities, thermal diffusivities and total hemispherical emissivities of several vacuum plasma sprayed (VPS) and cold sprayed copper alloy monolithic coatings, VPS NiAl, VPS NiCrAlY, extruded GRCop-84 and as-cast Cu-17(wt.%)Cr-5%Al. Part II discusses the temperature dependencies of the constant pressure specific heat capacities, CP, of these coatings. The data were empirically were regression-fitted with the equation: CP = AT4 + BT3 + CT2 + DT +E where T is the absolute temperature and A, B, C, D and E are regression constants. The temperature dependencies of the molar enthalpy, molar entropy and Gibbs molar free energy determined from experimental values of molar specific heat capacity are reported. Calculated values of CP using the Neumann-Kopp (NK) rule were in poor agreement with experimental data. Instead, a modification of the Neumann-Kopp rule was found to predict values closer to the experimental data with an absolute deviation less than 6.5%. The specific molar heat capacities for all the alloys did not agree with the Dulong-Petit law, and CP is greater than 3R, where R is the universal gas constant, were measured for all the alloys except NiAl for which CP is less than 3R at all temperatures.

Texture formation in iron particles using mechanical milling with graphite as a milling aid

Energy Technology Data Exchange (ETDEWEB)

Motozuka, S.; Hayashi, K. [Department of Mechanical Engineering, Gifu National College of Technology, 2236-2 Kamimakuwa, Motosu, Gifu 501-0495 (Japan); Tagaya, M. [Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188 (Japan); Morinaga, M. [Toyota Physical and Chemical Research Institute, 41-1, Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2015-09-15

Crystallographically anisotropic platelet iron particles were successfully prepared using a conventional ball mill with addition of graphite (Gp) particles. The morphological and structural changes resulting from the milling were investigated using scanning electron microscopy and X-ray diffraction. The spherical iron particles were plastically deformed into platelet shapes during the milling. Simultaneously, it is suggested that the size of the Gp particles decreased and adhered as nanoparticles on the surface of the iron particles. The adhered Gp particles affected the plastic deformation behavior of the iron particles: the (001) planes of α-iron were oriented parallel to the particle face, and no preferred in-plane orientation was observed. This study not only details the preparation of soft magnetic metal particles that crystallographically oriented to enhance their magnetic properties but also provides new insight into the activities of the well-established and extensively studied mechanical milling method.

Texture formation in iron particles using mechanical milling with graphite as a milling aid

International Nuclear Information System (INIS)

Motozuka, S.; Hayashi, K.; Tagaya, M.; Morinaga, M.

2015-01-01

Crystallographically anisotropic platelet iron particles were successfully prepared using a conventional ball mill with addition of graphite (Gp) particles. The morphological and structural changes resulting from the milling were investigated using scanning electron microscopy and X-ray diffraction. The spherical iron particles were plastically deformed into platelet shapes during the milling. Simultaneously, it is suggested that the size of the Gp particles decreased and adhered as nanoparticles on the surface of the iron particles. The adhered Gp particles affected the plastic deformation behavior of the iron particles: the (001) planes of α-iron were oriented parallel to the particle face, and no preferred in-plane orientation was observed. This study not only details the preparation of soft magnetic metal particles that crystallographically oriented to enhance their magnetic properties but also provides new insight into the activities of the well-established and extensively studied mechanical milling method

Magnetic properties of nanocrystalline pyrrhotite prepared by high-energy milling

DEFF Research Database (Denmark)

Balaz, P.; Godocikova, E.; Alacova, A.

2004-01-01

The nanocrystalline pyrrhotite was prepared by high-energy milling of lead sulphide with elemental Fe acting as reducing element. X-ray diffractometry, Mossbauer spectroscopy and VSM magnetometry were used to determine the properties of nanocrystalline iron sulphide prepared by the corresponding...... mechanochemical reaction. Pyrrhotite Fe1-xS together with the residual Fe metal were identified by the X-ray diffractometry. The kinetic studies performed by Mossbauer spectroscopy and VSM magnetometry allowed us to follow in more details the progress of the nanocrystalline magnetic phase formation during...

The effect of catalyst support on the RWGS reaction

International Nuclear Information System (INIS)

Laosiripojana, N.; Sutthisripok, W.

2004-01-01

'Full text:' Methane steam reforming is generally applied in order to produce synthesis gas mainly consist of hydrogen and carbon monoxide for later utilization in SOFC. This reaction is always carried out with the water gas shift reaction over a catalyst at elevated temperatures resulting in some carbon dioxide production. The CO/CO2 production selectivity strongly depends on the influence of water gas shift reaction. It was observed that the reactivity of this reaction depended on the type of support material. Stabilities, activities, and kinetics of the reverse water gas shift reaction (RWGS) for commercial nickel on CeO2, ZrO2, CeO2-ZrO2, TiO2, MgO, and Al2O3 supports were studied in order to observe the influence of the support on this reaction. According to the experiment, the activities of Ni/CeO2 toward the reverse water gas shift reaction (RWGS) were very high, and reached equilibrium level at approximately 600 o C (where the conversion of CO2 was closed to 1). Other oxide supports provided lower activities toward this reaction. It was observed that the activity of Ni/Al2O3 toward this reaction was the lowest. The kinetics of this reaction was also studied. Carbon dioxide presented positive effect on the reverse water gas shift reaction. The reaction orders in carbon dioxide were observed to be positive partial value between 0-1. It slightly decreased with increasing temperature for Ni/ CeO2 and Ni/CeO2-ZrO2, whereas it seemed to be independent of the operating temperature for other materials in the range of conditions studied. Hydrogen also showed positive effect on the reverse water gas shift reaction for all materials. The reaction order in hydrogen for all materials was observed to be the positive value and less than one for the range of conditions studied. The approximate values for all catalysts were between 0.45-0.65, and seemed to be independent of the operating temperature. The estimated values of the apparent activation energy for RWGS reaction

First-principles investigation of CO adsorption on pristine, C-doped and N-vacancy defected hexagonal AlN nanosheets

Science.gov (United States)

Ouyang, Tianhong; Qian, Zhao; Ahuja, Rajeev; Liu, Xiangfa

2018-05-01

The optimized atomic structures, energetics and electronic structures of toxic gas CO adsorption systems on pristine, C-doped and N-vacancy defected h-AlN nanosheets respectively have been investigated using Density functional theory (DFT-D2 method) to explore their potential gas detection or sensing capabilities. It is found that both the C-doping and the N-vacancy defect improve the CO adsorption energies of AlN nanosheet (from pure -3.847 eV to -5.192 eV and -4.959 eV). The absolute value of the system band gap change induced by adsorption of CO can be scaled up to 2.558 eV or 1.296 eV after C-doping or N-vacancy design respectively, which is evidently larger than the value of 0.350 eV for pristine material and will benefit the robustness of electronic signals in potential gas detection. Charge transfer mechanisms between CO and the AlN nanosheet have been presented by the Bader charge and differential charge density analysis to explore the deep origin of the underlying electronic structure changes. This theoretical study is proposed to predict and understand the CO adsorption properties of the pristine and defected h-AlN nanosheets and would help to guide experimentalists to develop better AlN-based two-dimensional materials for efficient gas detection or sensing applications in the future.

11C-radioisotope study of methanol co-reaction with ethanol over Ni-MCM-41 silica-alumina and Ni-alumina

International Nuclear Information System (INIS)

Sarkadi-Priboczki, E.; Kovacs, Z.; Tsoncheva, T.; Kumar, N.; Murzin, D.Yu.

2009-01-01

Complete text of publication follows. The Ni modifies the properties of acidic alumina and light acidic MCM-41 silica-alumina supports. The radioisotopic method is a suitable tool for distinction of the 11 Cradioisotopic methanol and its co-derivates from derivates of non-radioactive ethanol on these catalysts. Experimental. The Ni/A l 2O 3 (5 wt % Ni) is commercially available while H-MCMN-41 (Si/Al=20) and Ni-ion-exchanged MCM-41 silica-alumina (5 wt % Ni) were prepared and characterized in previous works. Before catalysis the Ni/Al 2 O 3 and Ni-MCM-41 were pre-reduced. The 11 C-methanol was formed by a radiochemical process from 11 C-carbon dioxide produced at cyclotron (T 1/2 = 20.4 min). The mixture of equivalent volume of radioactive methanol and non-radioactive ethanol was introduced into glass tube micro-flow reactor at ambient temperature. After adsorption, the valves were closed and the catalyst was heated up to the required temperatures. The desorption rate of the remaining 11 C-derivatives on catalysts were continuously followed by radiodetectors and the derivatives of methanol with ethanol were analyzed by Radio/FID-gas chromatography (FID is coupled on-line with a radiodetector). The ethanol and its derivates were identified by FID while the 11 C-methanol and its co-derivates (with ethanol) were detected by both of FID and radiodetector. Results The 11 C-dimethyl ether was the common product of the single 11 C-methanol transformation on H-MCM-41, Ni-MCM-41 and Ni- Al 2 O 3 at low temperature (200-280 degC) due to middle strong acid sites. At higher temperature (280-350 degC), the dimethyl ether and hydrocarbons were the dominant products on H-MCM-41 while dimethyl ether selectivity decreased on Ni-alumina and Ni-MCM-41 in favor of methane. The selectivities of methanol to formaldehyde and methane were the highest on Ni-MCM-41. During co-reaction of 11 C-methanol with non-radioactive ethanol, the 11 C-labeled coethers, namely 11 C-methyl ethyl ether

Current uranium mill licensing issues

International Nuclear Information System (INIS)

Scarano, R.A.

1977-01-01

The problems encountered to insure environmentally safe mining and milling of uranium ores are reviewed. Emphasis is placed on the management of tailings resulting from milling operations. It is pointed out that although the concentration of radioactivity in the tailings is relatively low, control measures are necessary because of the large quantities involved and because of the long half-life of the parent radionuclides present. The major concerns with mill tailings are radon release to the atmosphere and isolation of the tailings from the human environment. Since it is anticipated that the amount of tailings created by the year 2000 will be more than an order of magnitude greater than the quantities that have been generated during the past 30 years, it is recommended that all mill tailings storage areas be located remote from public contact and in areas such that disruption and dispersion by natural forces and seepage of toxic materials into ground water systems are reduced to the maximum extent achievable. Technical issues that receive attention during the NRC licensing process for uranium mills and the preparation of environmental impact statements are discussed briefly

The relationship between the hardness and the point-defect-density in neutron-irradiated MgO·3.0Al2O3 and AlN

International Nuclear Information System (INIS)

Suematsu, H.; Yatsui, K.; Yano, T.

2001-01-01

MgO·3.0Al 2 O 3 single crystals and sintered AlN polycrystals were irradiated with fast neutrons in various conditions and the hardness of the irradiated and unirradiated samples was measured with a Vickers hardness tester. The hardness of as-irradiated MgO·3.0Al 2 O 3 and AlN samples increased by 23 and 51%, respectively. After isochronal annealing, the hardness gradually decreased and mostly recovered to that of the unirradiated one up to 1400degC. Volume of the sample also increased after the irradiation and changed in the same way as the hardness by annealing. A relationship between the hardness and the density of point defects is proposed and the experimental results agree with the relationship. It implies that the point defects generated by the irradiation pin down dislocations and increase the hardness of neutron irradiated MgO·3.0Al 2 O 3 samples. (author)

Would John Stuart Mill have regulated pornography?

OpenAIRE

McGlynn, C.; Ward, I.

2014-01-01

John Stuart Mill dominates contemporary pornography debates where he is routinely invoked as an authoritative defence against regulation. This article, by contrast, argues that a broader understanding of Mill's ethical liberalism, his utilitarianism, and his feminism casts doubt over such an assumption. New insights into Mill's approach to sex, sexual activity, and the regulation of prostitution reveal an altogether more nuanced and activist approach. We conclude that John Stuart Mill would a...

Preparation of natural pyrite nanoparticles by high energy planetary ball milling as a nanocatalyst for heterogeneous Fenton process

Energy Technology Data Exchange (ETDEWEB)

Fathinia, Siavash [Department of Mining Engineering, Faculty of Engineering and Technology, Imam Khomeini International University, Qazvin (Iran, Islamic Republic of); Research Laboratory of Advanced Water and Wastewater Treatment Processes, Department of Applied Chemistry, Faculty of Chemistry, University of Tabriz, Tabriz (Iran, Islamic Republic of); Fathinia, Mehrangiz [Research Laboratory of Advanced Water and Wastewater Treatment Processes, Department of Applied Chemistry, Faculty of Chemistry, University of Tabriz, Tabriz (Iran, Islamic Republic of); Rahmani, Ali Akbar [Department of Mining Engineering, Faculty of Engineering and Technology, Imam Khomeini International University, Qazvin (Iran, Islamic Republic of); Khataee, Alireza, E-mail: a_khataee@tabrizu.ac.ir [Research Laboratory of Advanced Water and Wastewater Treatment Processes, Department of Applied Chemistry, Faculty of Chemistry, University of Tabriz, Tabriz (Iran, Islamic Republic of)

2015-02-01

Graphical abstract: - Highlights: • Pyrite nanoparticles were successfully produced by planetary ball milling process. • The physical and chemical properties of pyrite nanoparticles were fully examined. • The degradation of AO7 was notably enhanced by pyrite nanoparticles Fenton system. • The influences of basic operational parameters were investigated using CCD. - Abstract: In the present study pyrite nanoparticles were prepared by high energy mechanical ball milling utilizing a planetary ball mill. Various pyrite samples were produced by changing the milling time from 2 h to 6 h, in the constant milling speed of 320 rpm. X-ray diffraction (XRD), scanning electron microscopy (SEM) linked with energy dispersive X-ray (EDX), Fourier transform infrared spectroscopy (FT-IR) analysis and Brunauer–Emmett–Teller (BET) were performed to explain the characteristics of primary (unmilled) and milled pyrite samples. The average particle size distribution of the produced pyrite during 6 h milling was found to be between 20 nm and 100 nm. The catalytic performance of the different pyrite samples was examined in the heterogeneous Fenton process for degradation of C.I. Acid Orange 7 (AO7) solution. Results showed that the decolorization efficiency of AO7 in the presence of 6 h-milled pyrite sample was the highest. The impact of key parameters on the degradation efficiency of AO7 by pyrite nanoparticles catalyzed Fenton process was modeled using central composite design (CCD). Accordingly, the maximum removal efficiency of 96.30% was achieved at initial AO7 concentration of 16 mg/L, H{sub 2}O{sub 2} concentration of 5 mmol/L, catalyst amount of 0.5 g/L and reaction time of 25 min.

Improving milling and production of a dust-producing unit equipped with hammer mills

Energy Technology Data Exchange (ETDEWEB)

Vorotnikov, Ye.G.; Nikiforov, A.A.; Rasputin, O.V.; Sukhunin, V.I.

1982-01-01

This paper presents generalized experience for deriving coarse ground coal dust in hammer mills by providing comparison data on improving efficiency of operation of the unit when switching to a coarser-type grind of the fuel. Need to have more precise formulas to calculate grinding potential of hammer mills when using a coarser grind is shown.

Wear of micro end mills

DEFF Research Database (Denmark)

Bissacco, Giuliano; Hansen, Hans Nørgaard; De Chiffre, Leonardo

2005-01-01

This paper addresses the important issue of wear on micro end mills considering relevant metrological tools for its characterization and quantification. Investigation of wear on micro end mills is particularly difficult and no data are available in the literature. Small worn volumes cause large...... part. For this investigation 200 microns end mills are considered. Visual inspection of the micro tools requires high magnification and depth of focus. 3D reconstruction based on scanning electron microscope (SEM) images and stereo-pair technique is foreseen as a possible method for quantification...

Application of the novel mill tailings agglomeration technology for prevention of acid mine drainage

International Nuclear Information System (INIS)

Amaratunga, L.M.

1994-01-01

Acid generation and subsequent liberation of heavy metals results from the surface disposal of sulfide mineral bearing mill tailings. Most Canadian base metals such as Ni, Cu, Zn, and Pb, as well as uranium and precious metal milling operations are producers of reactive mill tailings containing the major sulfide gangue minerals such as pyrite, pyrrhotite and arsenopyrites. A novel disposal technology by cold-bond tailings agglomeration process (CBTA) is currently being developed at Laurentian University. This process has been adapted to prevent acid mine drainage from reactive mill tailings. A preliminary study was undertaken to evaluate the application of the concept of agglomeration of reactive mill tailings using various alkaline binders and incorporating suitable chemical additives. The binders and additives are selected for their effectiveness in the prevention or retardation of the initial chemical and biochemical oxidation reactions of sulfide mineral leading to acid generation. Following a cold-bond, cold curing tailings agglomeration process, various types and dosages of chemical binders and their additives were employed. The additives under investigation were lime, sodium lauryl sulfate, potassium phosphate dibasic, sodium chloride and sodium benzoate. Some of these chemicals are well known acid neutralizers and others are inexpensive anionic surfactants, detergents and fertilizers acting as bactericides. Most of these additives have been reported in the literature as effective chemical agents used in the prevention and control of acid mine drainage from sulfide minerals. The paper also presents a leachate study to investigate the acid generation potential from each batch of reactive tailings agglomerates containing various binders and non-toxic additives

Ball-milling-induced crystallization and ball-milling effect on thermal crystallization kinetics in an amorphous FeMoSiB alloy

International Nuclear Information System (INIS)

Guo, F.Q.; Lu, K.

1997-01-01

Microstructure evolution in a melt-spun amorphous Fe 77.2 Mo 0.8 Si 9 B 13 alloy subjected to high-energy ball milling was investigated by means of X-ray diffraction (XRD), a transmission electron microscope (TEM), and a differential scanning calorimeter (DSC). It was found that during ball milling, crystallization occurs in the amorphous ribbon sample with precipitation of an α-Fe solid solution, and the amorphous sample crystallizes completely into a single α-Fe nanostructure (rather than α-Fe and borides as in the usual thermal crystallization products) when the milling time exceeds 135 hours. The volume fraction of material crystallized was found to be approximately proportional to the milling time. The fully crystallized sample with a single α-Fe nanophase exhibits an intrinsic thermal stability against phase separation upon annealing at high temperatures. The ball-milling effect on the subsequent thermal crystallization of the amorphous phase in an as-milled sample was studied by comparison of the crystallization products and kinetic parameters between the as-quenched amorphous sample and the as-milled sample was studied by comparison of the crystallization products and kinetic parameters between the as-quenched amorphous sample and the as-milled partially crystallized samples. The crystallization temperatures and activation energies for the crystallization processes of the residual amorphous phase were considerably decreased due to ball milling, indicating that ball milling has a significant effect on the depression of thermal stability of the residual amorphous phase

Effects of milling on functional properties of rice flour.

Science.gov (United States)

Kadan, R S; Bryant, R J; Miller, J A

2008-05-01

A commercial long-grain rice flour (CRF) and the flours made by using a pin mill and the Udy mill from the same batch of broken second-head white long-grain rice were evaluated for their particle size and functional properties. The purpose of this study was to compare the commercial rice flour milling method to the pin and Udy milling methods used in our laboratory and pilot plant. The results showed that pin milled flour had more uniform particle size than the other 2 milled flours. The chalky kernels found in broken white milled rice were pulverized more into fines in both Udy milled flour and CRF than in the pin milled flour. The excessive amount of fines in flours affected their functional properties, for example, WSI and their potential usage in the novel foods such as rice breads (RB). The RB made from CRF collapsed more than loaves made from pin milled Cypress long-grain flours.

77 FR 14837 - Bioassay at Uranium Mills

Science.gov (United States)

2012-03-13

... NUCLEAR REGULATORY COMMISSION [NRC-2012-0057] Bioassay at Uranium Mills AGENCY: Nuclear Regulatory..., ``Bioassay at Uranium Mills.'' This guide describes a bioassay program acceptable to the NRC staff for uranium mills and applicable portions of uranium conversion facilities where the possibility of exposure...

New technology for recycling materials from oily cold rolling mill sludge