WorldWideScience

Sample records for reacting systems semiconductor

  1. Calorimetry of non-reacting systems

    CERN Document Server

    McCullough, John P

    2013-01-01

    Experimental Thermodynamics, Volume 1: Calorimetry of Non-Reacting Systems covers the heat capacity determinations for chemical substances in the solid, liquid, solution, and vapor states, at temperatures ranging from near the absolute zero to the highest at which calorimetry is feasible.This book is divided into 14 chapters. The first four chapters provide background information and general principles applicable to all types of calorimetry of non-reacting systems. The remaining 10 chapters deal with specific types of calorimetry. Most of the types of calorimetry treated are developed over a c

  2. Mathematical aspects of reacting and diffusing systems

    CERN Document Server

    Fife, Paul C

    1979-01-01

    Modeling and analyzing the dynamics of chemical mixtures by means of differ- tial equations is one of the prime concerns of chemical engineering theorists. These equations often take the form of systems of nonlinear parabolic partial d- ferential equations, or reaction-diffusion equations, when there is diffusion of chemical substances involved. A good overview of this endeavor can be had by re- ing the two volumes by R. Aris (1975), who himself was one of the main contributors to the theory. Enthusiasm for the models developed has been shared by parts of the mathematical community, and these models have, in fact, provided motivation for some beautiful mathematical results. There are analogies between chemical reactors and certain biological systems. One such analogy is rather obvious: a single living organism is a dynamic structure built of molecules and ions, many of which react and diffuse. Other analogies are less obvious; for example, the electric potential of a membrane can diffuse like a chemical, and ...

  3. Molecular Simulation of Reacting Systems; TOPICAL

    International Nuclear Information System (INIS)

    THOMPSON, AIDAN P.

    2002-01-01

    The final report for a Laboratory Directed Research and Development project entitled, Molecular Simulation of Reacting Systems is presented. It describes efforts to incorporate chemical reaction events into the LAMMPS massively parallel molecular dynamics code. This was accomplished using a scheme in which several classes of reactions are allowed to occur in a probabilistic fashion at specified times during the MD simulation. Three classes of reaction were implemented: addition, chain transfer and scission. A fully parallel implementation was achieved using a checkerboarding scheme, which avoids conflicts due to reactions occurring on neighboring processors. The observed chemical evolution is independent of the number of processors used. The code was applied to two test applications: irreversible linear polymerization and thermal degradation chemistry

  4. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  5. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    Science.gov (United States)

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  6. Modeling and design of reacting systems with phase transfer catalysis

    DEFF Research Database (Denmark)

    Piccolo, Chiara; Hodges, George; Piccione, Patrick M.

    2011-01-01

    Issues related to the design of biphasic (liquid) catalytic reaction operations are discussed. A chemical system involving the reaction of an organic-phase soluble reactant (A) with an aqueous-phase soluble reactant (B) in the presence of phase transfer catalyst (PTC) is modeled and based on it......, some of the design issues related to improved reaction operation are analyzed. Since the solubility of the different forms of the PTC in the organic solvent affects ultimately the catalyst partition coefficients, therefore, the organic solvent plays an important role in the design of PTC-based reacting...

  7. Applied patent RFID systems for building reacting HEPA air ventilation system in hospital operation rooms.

    Science.gov (United States)

    Lin, Jesun; Pai, Jar-Yuan; Chen, Chih-Cheng

    2012-12-01

    RFID technology, an automatic identification and data capture technology to provide identification, tracing, security and so on, was widely applied to healthcare industry in these years. Employing HEPA ventilation system in hospital is a way to ensure healthful indoor air quality to protect patients and healthcare workers against hospital-acquired infections. However, the system consumes lots of electricity which cost a lot. This study aims to apply the RFID technology to offer a unique medical staff and patient identification, and reacting HEPA air ventilation system in order to reduce the cost, save energy and prevent the prevalence of hospital-acquired infection. The system, reacting HEPA air ventilation system, contains RFID tags (for medical staffs and patients), sensor, and reacting system which receives the information regarding the number of medical staff and the status of the surgery, and controls the air volume of the HEPA air ventilation system accordingly. A pilot program was carried out in a unit of operation rooms of a medical center with 1,500 beds located in central Taiwan from Jan to Aug 2010. The results found the air ventilation system was able to function much more efficiently with less energy consumed. Furthermore, the indoor air quality could still keep qualified and hospital-acquired infection or other occupational diseases could be prevented.

  8. The Accounting Network: How Financial Institutions React to Systemic Crisis.

    Science.gov (United States)

    Puliga, Michelangelo; Flori, Andrea; Pappalardo, Giuseppe; Chessa, Alessandro; Pammolli, Fabio

    2016-01-01

    The role of Network Theory in the study of the financial crisis has been widely spotted in the latest years. It has been shown how the network topology and the dynamics running on top of it can trigger the outbreak of large systemic crisis. Following this methodological perspective we introduce here the Accounting Network, i.e. the network we can extract through vector similarities techniques from companies' financial statements. We build the Accounting Network on a large database of worldwide banks in the period 2001-2013, covering the onset of the global financial crisis of mid-2007. After a careful data cleaning, we apply a quality check in the construction of the network, introducing a parameter (the Quality Ratio) capable of trading off the size of the sample (coverage) and the representativeness of the financial statements (accuracy). We compute several basic network statistics and check, with the Louvain community detection algorithm, for emerging communities of banks. Remarkably enough sensible regional aggregations show up with the Japanese and the US clusters dominating the community structure, although the presence of a geographically mixed community points to a gradual convergence of banks into similar supranational practices. Finally, a Principal Component Analysis procedure reveals the main economic components that influence communities' heterogeneity. Even using the most basic vector similarity hypotheses on the composition of the financial statements, the signature of the financial crisis clearly arises across the years around 2008. We finally discuss how the Accounting Networks can be improved to reflect the best practices in the financial statement analysis.

  9. The Accounting Network: How Financial Institutions React to Systemic Crisis

    Science.gov (United States)

    Puliga, Michelangelo; Flori, Andrea; Pappalardo, Giuseppe; Chessa, Alessandro; Pammolli, Fabio

    2016-01-01

    The role of Network Theory in the study of the financial crisis has been widely spotted in the latest years. It has been shown how the network topology and the dynamics running on top of it can trigger the outbreak of large systemic crisis. Following this methodological perspective we introduce here the Accounting Network, i.e. the network we can extract through vector similarities techniques from companies’ financial statements. We build the Accounting Network on a large database of worldwide banks in the period 2001–2013, covering the onset of the global financial crisis of mid-2007. After a careful data cleaning, we apply a quality check in the construction of the network, introducing a parameter (the Quality Ratio) capable of trading off the size of the sample (coverage) and the representativeness of the financial statements (accuracy). We compute several basic network statistics and check, with the Louvain community detection algorithm, for emerging communities of banks. Remarkably enough sensible regional aggregations show up with the Japanese and the US clusters dominating the community structure, although the presence of a geographically mixed community points to a gradual convergence of banks into similar supranational practices. Finally, a Principal Component Analysis procedure reveals the main economic components that influence communities’ heterogeneity. Even using the most basic vector similarity hypotheses on the composition of the financial statements, the signature of the financial crisis clearly arises across the years around 2008. We finally discuss how the Accounting Networks can be improved to reflect the best practices in the financial statement analysis. PMID:27736865

  10. The Accounting Network: How Financial Institutions React to Systemic Crisis.

    Directory of Open Access Journals (Sweden)

    Michelangelo Puliga

    Full Text Available The role of Network Theory in the study of the financial crisis has been widely spotted in the latest years. It has been shown how the network topology and the dynamics running on top of it can trigger the outbreak of large systemic crisis. Following this methodological perspective we introduce here the Accounting Network, i.e. the network we can extract through vector similarities techniques from companies' financial statements. We build the Accounting Network on a large database of worldwide banks in the period 2001-2013, covering the onset of the global financial crisis of mid-2007. After a careful data cleaning, we apply a quality check in the construction of the network, introducing a parameter (the Quality Ratio capable of trading off the size of the sample (coverage and the representativeness of the financial statements (accuracy. We compute several basic network statistics and check, with the Louvain community detection algorithm, for emerging communities of banks. Remarkably enough sensible regional aggregations show up with the Japanese and the US clusters dominating the community structure, although the presence of a geographically mixed community points to a gradual convergence of banks into similar supranational practices. Finally, a Principal Component Analysis procedure reveals the main economic components that influence communities' heterogeneity. Even using the most basic vector similarity hypotheses on the composition of the financial statements, the signature of the financial crisis clearly arises across the years around 2008. We finally discuss how the Accounting Networks can be improved to reflect the best practices in the financial statement analysis.

  11. Hybrid system of semiconductor and photosynthetic protein

    International Nuclear Information System (INIS)

    Kim, Younghye; Shin, Seon Ae; Lee, Jaehun; Yang, Ki Dong; Nam, Ki Tae

    2014-01-01

    Photosynthetic protein has the potential to be a new attractive material for solar energy absorption and conversion. The development of semiconductor/photosynthetic protein hybrids is an example of recent progress toward efficient, clean and nanostructured photoelectric systems. In the review, two biohybrid systems interacting through different communicating methods are addressed: (1) a photosynthetic protein immobilized semiconductor electrode operating via electron transfer and (2) a hybrid of semiconductor quantum dots and photosynthetic protein operating via energy transfer. The proper selection of materials and functional and structural modification of the components and optimal conjugation between them are the main issues discussed in the review. In conclusion, we propose the direction of future biohybrid systems for solar energy conversion systems, optical biosensors and photoelectric devices. (topical reviews)

  12. High throughput semiconductor deposition system

    Science.gov (United States)

    Young, David L.; Ptak, Aaron Joseph; Kuech, Thomas F.; Schulte, Kevin; Simon, John D.

    2017-11-21

    A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 .mu.m/minute.

  13. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  14. 46 CFR 183.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 7 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 183.360 Section 183.360... TONS) ELECTRICAL INSTALLATION Power Sources and Distribution Systems § 183.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents...

  15. 46 CFR 129.360 - Semiconductor-rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor-rectifier systems. 129.360 Section 129.360... INSTALLATIONS Power Sources and Distribution Systems § 129.360 Semiconductor-rectifier systems. (a) Each semiconductor-rectifier system must have an adequate heat-removal system to prevent overheating. (b) If a...

  16. 46 CFR 120.360 - Semiconductor rectifier systems.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Semiconductor rectifier systems. 120.360 Section 120.360... INSTALLATION Power Sources and Distribution Systems § 120.360 Semiconductor rectifier systems. (a) Each semiconductor rectifier system must have an adequate heat removal system that prevents overheating. (b) Where a...

  17. MBE System for Antimonide Based Semiconductor Lasers

    National Research Council Canada - National Science Library

    Lester, Luke

    1999-01-01

    .... SLR-770 inductively coupled plasma (ICP) processing system. The SLR-770 has been invaluable in the study of plasma etching of AlGaAsSb and GaSb-materials that form the backbone of antimonide-based semiconductor lasers...

  18. A framework for the design of reacting systems with phase transfer catalysis

    DEFF Research Database (Denmark)

    Piccolo, Chiara; Shaw, Andrew; Hodges, George

    2012-01-01

    A generic modelling framework for phase transition catalyst based reacting systems has been developed and converted into a software tool. The modelling framework accommodates models of different types representing different sub-systems of the PTCbased reactive system; databases of model parameters...... and carefully collected and checked (for thermodynamic consistency) experimentally measured data. The models, data and software have been tested on various PTC-based reactive systems. Illustrative examples are provided....

  19. Thermal properties of wood reacted with a phosphorus pentoxide–amine system

    Science.gov (United States)

    Hong-Lin Lee; George C. Chen; Roger M. Rowell

    2004-01-01

    The objective of this research was to improve the fire-retardant properties of wood in one treatment using a phosphorus pentoxide–amine system. Phosphorus pentoxide and 16 amines including alkyl, halophenyl, and phenyl amines were compounded in N,N-dimethylformamide and the resulting solutions containing phosphoramides were reacted with wood. The characteristics of...

  20. Semiconductors and semimetals nanostructured systems

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Reed, Mark A

    1992-01-01

    This is the first available volume to consolidate prominent topics in the emerging field of nanostructured systems. Recent technological advancements have led to a new era of nanostructure physics, allowing for the fabrication of nanostructures whose behavior is dominated by quantum interference effects. This new capability has enthused the experimentalist and theorist alike. Innumerable possibilities have now opened up for physical exploration and device technology on the nanoscale. This book, with contributions from five pioneering researchers, will allow the expert and novice alike to explore a fascinating new field.Provides a state-of-the-art review of quantum-scale artificially nanostructured electronic systemsIncludes contributions by world-known experts in the fieldOpens the field to the non-expert with a concise introductionFeatures discussions of:Low-dimensional condensed matter physicsProperties of nanostructured, ultrasmall electronic systemsMesoscopic physics and quantum transportPhysics of 2D ele...

  1. Approximate solution to the Kolmogorov equation for a fission chain-reacting system

    International Nuclear Information System (INIS)

    Ruby, L.; McSwine, T.L.

    1986-01-01

    An approximate solution has been obtained for the Kolmogorov equation describing a fission chain-reacting system. The method considers the population of neutrons, delayed-neutron precursors, and detector counts. The effect of the detector is separated from the statistics of the chain reaction by a weak coupling assumption that predicts that the detector responds to the average rather than to the instantaneous neutron population. An approximate solution to the remaining equation, involving the populations of neutrons and precursors, predicts a negative-binomial behaviour for the neutron probability distribution

  2. Fungal decay resistance of wood reacted with phosphorus pentoxide-amine system

    Science.gov (United States)

    Hong-Lin Lee; George C. Chen; Roger M. Rowell

    2004-01-01

    Resistance of wood reacted in situ with phosphorus pentoxide-amine to the brown-rot fungus Gloeophyllum trabeum and white-rot fungus Trametes versicolor was examined. Wood reacted with either octyl, tribromo, or nitro derivatives were more resistant to both fungi. Threshold retention values of phosphoramide-reacted wood to white-rot fungus T. versicolor ranged from 2.9...

  3. Electron and nuclear spin system polarization in semiconductors by light

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, B; Flejsher, V

    1981-02-01

    Discussed are the principles of optical electron spin orientation, dynamic polarization and cooling of nuclear spin systems in optical electron orientation, and behavioural characteristics of bound electron and nuclear spin systems of a semiconductor in the optical orientation situation.

  4. Analysis of the trend to equilibrium of a chemically reacting system

    International Nuclear Information System (INIS)

    Kremer, Gilberto M; Bianchi, Miriam Pandolfi; Soares, Ana Jacinta

    2007-01-01

    In this present paper, a quaternary gaseous reactive mixture, for which the chemical reaction is close to its final stage and the elastic and reactive frequencies are comparable, is modelled within the Boltzmann equation extended to reacting gases. The main objective is a detailed analysis of the non-equilibrium effects arising in the reactive system A 1 + A 2 ↔ A 3 + A 4 , in a flow regime which is considered not far away from thermal, mechanical and chemical equilibrium. A first-order perturbation solution technique is applied to the macroscopic field equations for the spatially homogeneous gas system, and the trend to equilibrium is studied in detail. Adopting elastic hard-spheres and reactive line-of-centres cross sections and an appropriate choice of the input distribution functions-which allows us to distinguish the two cases where the constituents are either at same or different temperatures-explicit computations of the linearized production terms for mass, momentum and total energy are performed for each gas species. The departures from the equilibrium states of densities, temperatures and diffusion fluxes are characterized by small perturbations of their corresponding equilibrium values. For the hydrogen-chlorine system, the perturbations are plotted as functions of time for both cases where the species are either at the same or different temperatures. Moreover, the trend to equilibrium of the reaction rates is represented for the forward and backward reaction H 2 + Cl ↔ HCl + H

  5. How do patients and providers react to different incentives in the Chinese multiple health security systems?

    Science.gov (United States)

    Zhang, Chun-Yu; Hashimoto, Hideki

    2015-03-05

    China has achieved universal health insurance coverage. This study examined how patients and hospitals react to the different designs of the plans and to monitoring of patients by the local authority in the Chinese multiple health security schemes. The sample for analysis consisted of 1006 orthopedic inpatients who were admitted between January and December 2011 at a tertiary teaching hospital located in Beijing. We conducted general linear regression analyses to investigate whether medical expenditure and length of stay differed according to the different incentives. Patients under plans with lower copayment rates consumed significantly more medication compared with those under plans with higher copayment rates. Under plans with an annual ceiling for insurance coverage, patients spent significantly more in the second half of the year than in the first half of the year. The length of stay was shorter among patients when there were government monitoring and a penalty to the hospital service provider. Our results indicate that the different designs and monitoring of the health security systems in China cause opportunistic behavior by patients and providers. Reformation is necessary to reduce those incentives, and improve equity and efficiency in healthcare use.

  6. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  7. Ferromagnetism in diluted magnetic semiconductor heterojunction systems

    Czech Academy of Sciences Publication Activity Database

    Lee, B.; Jungwirth, Tomáš; MacDonald, A. H.

    2002-01-01

    Roč. 17, - (2002), s. 393-403 ISSN 0268-1242 R&D Projects: GA ČR GA202/98/0085; GA MŠk OC P5.10 Institutional research plan: CEZ:AV0Z1010914 Keywords : ferromagnetic semiconductors * heterostructures Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.241, year: 2002

  8. Controlled Quantum Operations of a Semiconductor Three-Qubit System

    Science.gov (United States)

    Li, Hai-Ou; Cao, Gang; Yu, Guo-Dong; Xiao, Ming; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

    2018-02-01

    In a specially designed semiconductor device consisting of three capacitively coupled double quantum dots, we achieve strong and tunable coupling between a target qubit and two control qubits. We demonstrate how to completely switch on and off the target qubit's coherent rotations by presetting two control qubits' states. A Toffoli gate is, therefore, possible based on these control effects. This research paves a way for realizing full quantum-logic operations in semiconductor multiqubit systems.

  9. Semiconductor terahertz technology devices and systems at room temperature operation

    CERN Document Server

    Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

    2015-01-01

    Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

  10. Electron and nuclear spin system polarization in semiconductors by light

    International Nuclear Information System (INIS)

    Zakharchenya, B.; Flejsher, V.

    1981-01-01

    Discussed are the principles of optical electron spin orientation, dynamic polarization and cooling of nuclear spin systems in optical electron orientation, and behavioural characteristics of bound electron and nuclear spin systems of a semiconductor in the optical orientation situation. (J.P.)

  11. Semiconductor Mode-Locked Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten

    2003-01-01

    The thesis deals with the design and fabrication of semiconductor mode-locked lasers for use in optical communication systems. The properties of pulse sources and characterization methods are described as well as requirements for application in communication systems. Especially, the importance of...

  12. Yarr: A PCIe based readout system for semiconductor tracking systems

    Energy Technology Data Exchange (ETDEWEB)

    Heim, Timon [Bergische Universitaet Wuppertal, Wuppertal (Germany); CERN, Geneva (Switzerland); Maettig, Peter [Bergische Universitaet Wuppertal, Wuppertal (Germany); Pernegger, Heinz [CERN, Geneva (Switzerland)

    2015-07-01

    The Yarr readout system is a novel DAQ concept, using an FPGA board connected via PCIe to a computer, to read out semiconductor tracking systems. The system uses the FPGA as a reconfigurable IO interface which, in conjunction with the very high speed of the PCIe bus, enables a focus of processing the data stream coming from the pixel detector in software. Modern computer system could potentially make the need of custom signal processing hardware in readout systems obsolete and the Yarr readout system showcases this for FE-I4 chips, which are state-of-the-art readout chips used in the ATLAS Pixel Insertable B-Layer and developed for tracking in high multiplicity environments. The underlying concept of the Yarr readout system tries to move intelligence from hardware into the software without the loss of performance, which is made possible by modern multi-core processors. The FPGA board firmware acts like a buffer and does no further processing of the data stream, enabling rapid integration of new hardware due to minimal firmware minimisation.

  13. Decoherence in semiconductor cavity QED systems due to phonon couplings

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Mørk, Jesper

    2014-01-01

    We investigate the effect of electron-phonon interactions on the coherence properties of single photons emitted from a semiconductor cavity QED (quantum electrodynamics) system, i.e., a quantum dot embedded in an optical cavity. The degree of indistinguishability, governing the quantum mechanical...

  14. Semiconductor dosimetry system for gamma and neutron radiation

    International Nuclear Information System (INIS)

    Savic, Z.; Pavlovic, Z.

    1995-01-01

    The semiconductor dosimetry system for gamma and neutron radiation based on pMOS transistor and PIN diode is described. It is intended for tactical or accidental personal dosimetry. The production steps are given. The temperature, dose and time (fading) response are reported. Hardware and software requirements which are needed for obtaining the desired measurement error are pointed. (author)

  15. Extension of spatiotemporal chaos in glow discharge-semiconductor systems.

    Science.gov (United States)

    Akhmet, Marat; Rafatov, Ismail; Fen, Mehmet Onur

    2014-12-01

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528-4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).].

  16. Extension of spatiotemporal chaos in glow discharge-semiconductor systems

    International Nuclear Information System (INIS)

    Akhmet, Marat; Fen, Mehmet Onur; Rafatov, Ismail

    2014-01-01

    Generation of chaos in response systems is discovered numerically through specially designed unidirectional coupling of two glow discharge-semiconductor systems. By utilizing the auxiliary system approach, [H. D. I. Abarbanel, N. F. Rulkov, and M. M. Sushchik, Phys. Rev. E 53, 4528–4535 (1996)] it is verified that the phenomenon is not a chaos synchronization. Simulations demonstrate various aspects of the chaos appearance in both drive and response systems. Chaotic control is through the external circuit equation and governs the electrical potential on the boundary. The expandability of the theory to collectives of glow discharge systems is discussed, and this increases the potential of applications of the results. Moreover, the research completes the previous discussion of the chaos appearance in a glow discharge-semiconductor system [D. D. Šijačić U. Ebert, and I. Rafatov, Phys. Rev. E 70, 056220 (2004).

  17. Development of the power control system for semiconductor lasers

    International Nuclear Information System (INIS)

    Kim, Kwang Suk; Kim, Cheol Jung

    1997-12-01

    For the first year plan of this program, we developed the power control system for semiconductor lasers. We applied the high-current switching mode techniques to fabricating a power control system. Then, we investigated the direct side pumping techniques with GaA1As diode laser bars to laser crystal without pumping optics. We obtained 0.5W average output power from this DPSSL. (author). 54 refs., 3 tabs., 18 figs

  18. The REACT Project

    DEFF Research Database (Denmark)

    Bloch, Paul; Blystad, Astrid; Byskov, Jens

    decisions; and the provision of leadership and the enforcement of conditions. REACT - "REsponse to ACcountable priority setting for Trust in health systems" is an EU-funded five-year intervention study, which started in 2006 testing the application and effects of the AFR approach in one district each...... selected disease and programme interventions and services, within general care and on health systems management. Efforts to improve health sector performance have not yet been satisfactory, and adequate and sustainable improvements in health outcomes have not been shown. Priority setting in health systems...... improvements to health systems performance discussed....

  19. COHERENT LIDAR SYSTEM BASED ON A SEMICONDUCTOR LASER AND AMPLIFIER

    DEFF Research Database (Denmark)

    2009-01-01

    The present invention relates to a compact, reliable and low-cost coherent LIDAR (Light Detection And Ranging) system for remote wind-speed determination, determination of particle concentration, and/or temperature based on an all semiconductor light source and related methods. The present...... invention provides a coherent LIDAR system comprising a semiconductor laser for emission of a measurement beam of electromagnetic radiation directed towards a measurement volume for illumination of particles in the measurement volume, a reference beam generator for generation of a reference beam, a detector...... for generation of a detector signal by mixing of the reference beam with light emitted from the particles in the measurement volume illuminated by the measurement beam, and a signal processor for generating a velocity signal corresponding to the velocity of the particles based on the detector signal....

  20. Mask alignment system for semiconductor processing

    Science.gov (United States)

    Webb, Aaron P.; Carlson, Charles T.; Weaver, William T.; Grant, Christopher N.

    2017-02-14

    A mask alignment system for providing precise and repeatable alignment between ion implantation masks and workpieces. The system includes a mask frame having a plurality of ion implantation masks loosely connected thereto. The mask frame is provided with a plurality of frame alignment cavities, and each mask is provided with a plurality of mask alignment cavities. The system further includes a platen for holding workpieces. The platen may be provided with a plurality of mask alignment pins and frame alignment pins configured to engage the mask alignment cavities and frame alignment cavities, respectively. The mask frame can be lowered onto the platen, with the frame alignment cavities moving into registration with the frame alignment pins to provide rough alignment between the masks and workpieces. The mask alignment cavities are then moved into registration with the mask alignment pins, thereby shifting each individual mask into precise alignment with a respective workpiece.

  1. Driving with a partially autonomous forward collision warning system: how do drivers react?

    Science.gov (United States)

    Muhrer, Elke; Reinprecht, Klaus; Vollrath, Mark

    2012-10-01

    The effects of a forward collision warning (FCW) and braking system (FCW+) were examined in a driving simulator study analyzing driving and gaze behavior and the engagement in a secondary task. In-depth accident analyses indicate that a lack of appropriate expectations for possible critical situations and visual distraction may be the major causes of rear-end crashes. Studies with FCW systems have shown that a warning alone was not enough for a driver to be able to avoid the accident. Thus,an additional braking intervention by such systems could be necessary. In a driving simulator experiment, 30 drivers took part in a car-following scenario in an urban area. It was assumed that different lead car behaviors and environmental aspects would lead to different drivers' expectations of the future traffic situation. Driving with and without FCW+ was introduced as a between-subjects factor. Driving with FCW+ resulted in significantly fewer accidents in critical situations. This result was achieved by the system's earlier reaction time as compared with that of drivers. The analysis of the gaze behavior showed that driving with the system did not lead to a stronger involvement in secondary tasks. The study supports the hypotheses about the importance of missing expectations for the occurrence of accidents. These accidents can be prevented by an FCW+ that brakes autonomously. The results indicate that an autonomous braking intervention should be implemented in FCW systems to increase the effectiveness of these assistance systems.

  2. Integrated Reacting Fluid Dynamics and Predictive Materials Degradation Models for Propulsion System Conditions, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Computational fluid dynamics (CFD) simulations are routinely used by NASA to optimize the design of propulsion systems. Current methods for CFD modeling rely on...

  3. A constrained approach to multiscale stochastic simulation of chemically reacting systems

    KAUST Repository

    Cotter, Simon L.; Zygalakis, Konstantinos C.; Kevrekidis, Ioannis G.; Erban, Radek

    2011-01-01

    Stochastic simulation of coupled chemical reactions is often computationally intensive, especially if a chemical system contains reactions occurring on different time scales. In this paper, we introduce a multiscale methodology suitable to address

  4. A constrained approach to multiscale stochastic simulation of chemically reacting systems

    KAUST Repository

    Cotter, Simon L.

    2011-01-01

    Stochastic simulation of coupled chemical reactions is often computationally intensive, especially if a chemical system contains reactions occurring on different time scales. In this paper, we introduce a multiscale methodology suitable to address this problem, assuming that the evolution of the slow species in the system is well approximated by a Langevin process. It is based on the conditional stochastic simulation algorithm (CSSA) which samples from the conditional distribution of the suitably defined fast variables, given values for the slow variables. In the constrained multiscale algorithm (CMA) a single realization of the CSSA is then used for each value of the slow variable to approximate the effective drift and diffusion terms, in a similar manner to the constrained mean-force computations in other applications such as molecular dynamics. We then show how using the ensuing Fokker-Planck equation approximation, we can in turn approximate average switching times in stochastic chemical systems. © 2011 American Institute of Physics.

  5. Testing methodologies and systems for semiconductor optical amplifiers

    Science.gov (United States)

    Wieckowski, Michael

    Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

  6. Freescale Semiconductor Successfully Implements an Energy Management System

    Energy Technology Data Exchange (ETDEWEB)

    None

    2011-06-30

    Through the Superior Energy Performance (SEP) plant certification program, Freescale Semiconductor implemented projects at the company's Oak Hill Fab plant that reduced annual energy consumption by 28 million kilowatt hours (kWh) of electricity and 26,000 million British thermal units (Btu) of natural gas between 2006 and 2009, saving more than $2 million each year. The plant is now certified at the SEP silver level, and has a management system in place to proactively manage the facility's energy resources in the future.

  7. Production Performance of the ATLAS Semiconductor Tracker Readout System

    CERN Document Server

    Mitsou, V A

    2006-01-01

    The ATLAS Semiconductor Tracker (SCT) together with the pixel and the transition radiation detectors will form the tracking system of the ATLAS experiment at LHC. It will consist of 20000 single-sided silicon microstrip sensors assembled back-to-back into modules mounted on four concentric barrels and two end-cap detectors formed by nine disks each. The SCT module production and testing has finished while the macro-assembly is well under way. After an overview of the layout and the operating environment of the SCT, a description of the readout electronics design and operation requirements will be given. The quality control procedure and the DAQ software for assuring the electrical functionality of hybrids and modules will be discussed. The focus will be on the electrical performance results obtained during the assembly and testing of the end-cap SCT modules.

  8. Reacting plasma project at IPP Japan

    International Nuclear Information System (INIS)

    Miyahara, A.; Momota, H.; Hamada, Y.; Kawamura, K.; Akimune, H.

    1981-01-01

    Contributed papers of the seminar on burning plasma held at UCLA are collected. Paper on ''overview of reacting plasma project'' described aim and philosophy of R-Project in Japan. Paper on ''Burning plasma and requirements for design'' gave theoretical aspect of reacting plasma physics while paper on ''plasma container, heating and diagnostics'' treated experimental aspect. Tritium handling is essential for the next step experiment; therefore, paper on ''Tritium problems in burning plasma experiments'' took an important part of this seminar. As appendix, paper on ''a new type of D - ion source using Si-semiconductor'' was added because such an advanced R and D work is essential for R-Project. (author)

  9. New organic semiconductors with imide/amide-containing molecular systems.

    Science.gov (United States)

    Liu, Zitong; Zhang, Guanxin; Cai, Zhengxu; Chen, Xin; Luo, Hewei; Li, Yonghai; Wang, Jianguo; Zhang, Deqing

    2014-10-29

    Due to their high electron affinities, chemical and thermal stabilities, π-conjugated molecules with imide/amide frameworks have received considerable attentions as promising candidates for high-performance optoelectronic materials, particularly for organic semiconductors with high carrier mobilities. The purpose of this Research News is to give an overview of recent advances in development of high performance imide/amide based organic semiconductors for field-effect transistors. It covers naphthalene diimide-, perylene diimide- and amide-based conjugated molecules and polymers for organic semiconductors. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells

    Directory of Open Access Journals (Sweden)

    Ryosuke Motoyoshi

    2010-01-01

    Full Text Available Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS- based solar cells with titanium dioxide (TiO2 were produced on F-doped SnO2 (FTO. A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO2/CIS structure. Cupric oxide- (CuO- and cuprous oxide- (Cu2O- based solar cells with fullerene (C60 were also fabricated on FTO and indium tin oxide (ITO. The microstructure and cell performance of the CuO/C60 heterojunction and the Cu2O:C60 bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C60 and ITO/Cu2O:C60 structures provided short-circuit current density of 0.015 mAcm−2 and 0.11 mAcm−2, and open-circuit voltage of 0.045 V and 0.17 V under an Air Mass 1.5 illumination, respectively. The microstructures of the active layers were examined by X-ray diffraction and transmission electron microscopy.

  11. How relay protection and automatic control systems react to the energizing of a 500 kV line

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, V S; Kokovich, V E; Ovchinnikov, V V

    1966-04-01

    When the three phases of a 500 to 750 KV line are switched on to load by existing types of circuit breaker, a heavy aperiodic component of current appears in the secondaries of the neutral current transformers. The dc component, although damped, has a relatively long decay period. This effect is particularly evident in the case of high speed or nonsynchronized autoreclosure. The presence of such a large dc component can cause maloperation of the line earth fault protection unless special precautions are taken. Two complementary solutions are described, preventing the first stage earth fault protection from reacting to the aperiodic component, and reducing the time constant of the CT secondary circuits.

  12. Production planning and control for semiconductor wafer fabrication facilities modeling, analysis, and systems

    CERN Document Server

    Mönch, Lars; Mason, Scott J

    2012-01-01

    Over the last fifty-plus years, the increased complexity and speed of integrated circuits have radically changed our world. Today, semiconductor manufacturing is perhaps the most important segment of the global manufacturing sector. As the semiconductor industry has become more competitive, improving planning and control has become a key factor for business success. This book is devoted to production planning and control problems in semiconductor wafer fabrication facilities. It is the first book that takes a comprehensive look at the role of modeling, analysis, and related information systems

  13. Nanoimprint system development and status for high volume semiconductor manufacturing

    Science.gov (United States)

    Hiura, Hiromi; Takabayashi, Yukio; Takashima, Tsuneo; Emoto, Keiji; Choi, Jin; Schumaker, Phil

    2016-10-01

    Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for wafer manufacturing. For imprint lithography, recent attention has been given to the areas of overlay, throughput, defectivity, and mask replication. This paper reviews progress in these critical areas. Recent demonstrations have proven that mix and match overlay of less than 5nm can achieved. Further reductions require a higher order correction system. Modeling and experimental data are presented which provide a path towards reducing the overlay errors to less than 3nm. Throughput is mainly impacted by the fill time of the relief images on the mask. Improvement in resist materials provides a solution that allows 15 wafers per hour per station, or a tool throughput of 60 wafers per hour. Defectivity and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers. Finally, on the mask side, a new replication tool, the FPA-1100NR2 is

  14. The development of intelligent expert system with SAT for semiconductor

    International Nuclear Information System (INIS)

    Kim, Jae Yeol; Shim, Jae Gi; Jeong, Hyun Jo; Cho, Young Tae; Kim, Chang Hyun; Ko, Myung Soo

    2001-01-01

    In this study, the researches classifying the artificial flaws in semiconductor packages are performed using pattern recognition technology. For this purposes image pattern recognition package including the user made software was developed and total procedure including ultrasonic image acquisition, equalization filtering, binary processing, edge detection and classifier selection is treated by BP(backpropagation). Specially, it is compared IP(image processing) and SOM(self-organizing map) as preprocessing method for dimensionality reduction for entrance into multi-layer perceptron(backpropagation). Also, the pattern recognition techniques is applied to the classification problem of semiconductor flaws as crack, delamination. According to this results, it is possible to acquire the recognition rate of 83.4% about delamination, 75.7% about crack for SOM, and to acquire the recognition rate of 100% for BP.

  15. Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

    Science.gov (United States)

    Lau, Wayne Heung

    This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton

  16. Calculation of neutron interior source distribution within subcritical fission-chain reacting systems for a prescribed power density generation

    International Nuclear Information System (INIS)

    Moraes, Leonardo R.C.; Alves Filho, Hermes; Barros, Ricardo C.

    2017-01-01

    Accelerator Driven Systems (ADS) are sub-critical systems stabilized by stationary external sources of neutrons. A system is subcritical when the removal by absorption and leakage exceeds the production by fission and tends to shut down. On the other hand, any subcritical system can be stabilized by including time-independent external sources of neutrons. The goal of this work is to determine the intensity of uniform and isotropic sources of neutrons that must be added inside all fuel regions of a subcritical system so that it becomes stabilized, generating a prescribed distribution of electric power. A computer program has been developed in Java language to estimate the intensity of stationary sources of neutrons that must be included in the fuel regions to drive the subcritical system with a fixed power distribution prescribed by the user. The mathematical model used to achieve this goal was the energy multigroup, slab-geometry neutron transport equation in the discrete ordinates (S N ) formulation and the response matrix method was applied to solve the forward and the adjoint S N problems. Numerical results are given to verify the present. (author)

  17. Development of design technology for system - integrated modular advanced react or (SMART) /technology support of NSSS design for SMART

    Energy Technology Data Exchange (ETDEWEB)

    Joon, Hah Yung; Kim, Kee Eun [KOPEC, Taejeon (Korea)

    2002-03-01

    SMART design concept is very different from that of the commercial PWRs, as the main components such as the steam generator, pressurizer, and the main coolant pumps are incorporate the related sub-part systems into the reactor vessel. In this report the design for SMART is the basic design stage and is the new design technology development task for the first trial in Korea. KOPEC NED has participated with Korea Atomic Energy Research Institute for the task of 'Development of Design Technology for SMART' as supporting sub-task of it. The system design (ECCS, Makeup and Purification System), mechanical design (Seismic Analysis, BLPB Analysis, Structural Analysis, Design Load Calculation, Stress Fatigue Evaluation, Fracture Mechanical and Structural Integrity Evaluation), MMIS design (Alarm and Indication System, Information Processing System, Large Display Panel, Human System Interface Guideline) have been performed as a basic design for SMART during 31 months (1999. 9.1{approx}2002.3.31). This report is the final one for the support of the main task of Korea Atomic Energy Research Institute. 124 refs., 154 figs., 97 tabs. (Author)

  18. Calculation of neutron interior source distribution within subcritical fission-chain reacting systems for a prescribed power density generation

    Energy Technology Data Exchange (ETDEWEB)

    Moraes, Leonardo R.C.; Alves Filho, Hermes; Barros, Ricardo C., E-mail: lrcmoraes@iprj.uerj.br, E-mail: halves@iprj.uerj.br, E-mail: ricardob@iprj.uerj.br [Universidade do Estado do Rio de Janeiro (UERJ), Nova Friburgo, RJ (Brazil). Programa de Pós-Graduação em Modelagem Computacional

    2017-07-01

    Accelerator Driven Systems (ADS) are sub-critical systems stabilized by stationary external sources of neutrons. A system is subcritical when the removal by absorption and leakage exceeds the production by fission and tends to shut down. On the other hand, any subcritical system can be stabilized by including time-independent external sources of neutrons. The goal of this work is to determine the intensity of uniform and isotropic sources of neutrons that must be added inside all fuel regions of a subcritical system so that it becomes stabilized, generating a prescribed distribution of electric power. A computer program has been developed in Java language to estimate the intensity of stationary sources of neutrons that must be included in the fuel regions to drive the subcritical system with a fixed power distribution prescribed by the user. The mathematical model used to achieve this goal was the energy multigroup, slab-geometry neutron transport equation in the discrete ordinates (S{sub N}) formulation and the response matrix method was applied to solve the forward and the adjoint S{sub N} problems. Numerical results are given to verify the present. (author)

  19. Self-reflection in a system of excitons and biexcitons in semiconductors

    International Nuclear Information System (INIS)

    Khadzhi, P I; Lyakhomskaya, K D

    1999-01-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted. (nonlinear optical phenomena)

  20. NONLINEAR OPTICAL PHENOMENA: Self-reflection in a system of excitons and biexcitons in semiconductors

    Science.gov (United States)

    Khadzhi, P. I.; Lyakhomskaya, K. D.

    1999-10-01

    The characteristic features of the self-reflection of a powerful electromagnetic wave in a system of coherent excitons and biexcitons in semiconductors were investigated as one of the manifestations of the nonlinear optical skin effect. It was found that a monotonically decreasing standing wave with an exponentially falling spatial tail is formed in the surface region of a semiconductor. Under the influence of the field of a powerful pulse, an optically homogeneous medium is converted into one with distributed feedback. The appearance of spatially separated narrow peaks of the refractive index, extinction coefficient, and reflection coefficient is predicted.

  1. Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)

    International Nuclear Information System (INIS)

    Kim, Jong-Uk; Park, Chong-Ook; Park, Myung-Il; Kim, Sun-Hwan; Lee, Jung-Bok

    2002-01-01

    Plasma ignition method has been applied in various fields particularly to the rocket propulsion, pyrotechnics, explosives, and to the automotive air-bag system. Ignition method for those applications should be safe and also operate reliably in hostile environments such as; electromagnetic noise, drift voltage, electrostatic background and so on. In the present Letter, a semiconductor bridge (SCB) plasma ignition device was fabricated and its plasma characteristics including the propagation speed of the plasma, plasma size, and plasma temperature were investigated with the aid of the visualization of micro scale plasma (i.e., ≤350 μm), which generated from a micro-electro-mechanical poly-silicon semiconductor bridge (SCB)

  2. Evaluating performance of a pixel array semiconductor SPECT system for small animal imaging

    International Nuclear Information System (INIS)

    Kubo, Naoki; Zhao, Songji; Fujiki, Yutaka

    2005-01-01

    Small animal imaging has recently been focused on basic nuclear medicine. We have designed and built a small animal SPECT imaging system using a semiconductor camera and a newly designed collimator. We assess the performance of this system for small object imaging. We employed an MGC 1500 (Acrorad Co.) camera including a CdTe semiconductor. The pixel size was 1.4 mm/pixel. We designed and produced a parallel-hole collimator with 20-mm hole length. Our SPECT system consisted of a semiconductor camera with the subject holder set on an electric rotating stage controlled by a computer. We compared this system with a conventional small animal SPECT system comprising a SPECT-2000H scanner with four Anger type cameras and pinhole collimators. The count rate linearity for estimation of the scatter was evaluated for a pie-chart phantom containing different concentrations of 99m Tc. We measured the full width half maximum (FWHM) of the 99m Tc SPECT line source along with scatter. The system volume sensitivity was examined using a flood source phantom which was 35 mm long with a 32-mm inside diameter. Additionally, an in vivo myocardial perfusion SPECT study was performed with a rat. With regards to energy resolution, the semiconductor camera (5.6%) was superior to the conventional Anger type camera (9.8%). In the count rate linearity evaluation, the regression lines of the SPECT values were y=0.019x+0.031 (r 2 =0.999) for our system and y=0.018x+0.060 (r 2 =0.997) for the conventional system. Thus, the scatter count using the semiconductor camera was less than that using the conventional camera. FWHMs of our system and the conventional system were 2.9±0.1 and 2.0±0.1 mm, respectively. Moreover, the system volume sensitivity of our system [0.51 kcps/(MBq/ml)/cm] was superior to that of the conventional system [0.44 kcps/(MBq/ml)/cm]. Our system provided clear images of the rat myocardium, sufficient for practical use in small animal imaging. Our SPECT system, utilizing a

  3. Application of the e-KT-UNIFAC Model for the Improved and Innovative Design of Biphasic Reacting Systems

    DEFF Research Database (Denmark)

    Anantpinijwatna, Amata; Kim, Sun H.; Sales-Cruz, Mauricio

    2016-01-01

    framework of three modules has been developed to describe phase equilibria, reactions, mass transfer, and material balances of such processes. The recently developed group-contribution electrolyte model, e-KT-UNIFAC, is used to predict the-partitioning and equilibria of electrolyte and nonelectrolyte...... to a minimum of time-dependent data. In addition to describing the behavior of such systems, predictions can be made of the effectiveness in rates and ultimate amounts of product formation using different organic solvents. The present paper briefly describes the framework and applies it to the cases...

  4. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    International Nuclear Information System (INIS)

    Shpotyuk, O.

    1997-01-01

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author)

  5. STM and synchrotron radiation studies of prototypical metal/semiconductor systems

    DEFF Research Database (Denmark)

    Lay, G. le; Aristov, V.Y.; Seehofer, L.

    1994-01-01

    Since the origin of surface science noble metal/elemental semiconductor couples have been considered as ''prototypical'' systems. After three decades of research their structural and electronic properties remain an intriguing maze despite recent advances made, especially thanks to the development...

  6. Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems

    International Nuclear Information System (INIS)

    Kamerbeek, A. M.; Banerjee, T.; Hueting, R. J. E.

    2015-01-01

    Electron doped SrTiO 3 , a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO 3 systems show reasonably strong rectification even when SrTiO 3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlO x in between the metal and n-SrTiO 3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90 V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO 3 ) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO 3 . The non-linear permittivity of n-SrTiO 3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors

  7. Comparison of Mixing Calculations for Reacting and Non-Reacting Flows in a Cylindrical Duct

    Science.gov (United States)

    Oechsle, V. L.; Mongia, H. C.; Holdeman, J. D.

    1994-01-01

    A production 3-D elliptic flow code has been used to calculate non-reacting and reacting flow fields in an experimental mixing section relevant to a rich burn/quick mix/lean burn (RQL) combustion system. A number of test cases have been run to assess the effects of the variation in the number of orifices, mass flow ratio, and rich-zone equivalence ratio on the flow field and mixing rates. The calculated normalized temperature profiles for the non-reacting flow field agree qualitatively well with the normalized conserved variable isopleths for the reacting flow field indicating that non-reacting mixing experiments are appropriate for screening and ranking potential rapid mixing concepts. For a given set of jet momentum-flux ratio, mass flow ratio, and density ratio (J, MR, and DR), the reacting flow calculations show a reduced level of mixing compared to the non-reacting cases. In addition, the rich-zone equivalence ratio has noticeable effect on the mixing flow characteristics for reacting flows.

  8. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  9. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  10. Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

    International Nuclear Information System (INIS)

    Ipser, H.; Richter, K.; Micke, K.

    1997-01-01

    In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

  11. Hybrid artificial photosynthetic systems comprising semiconductors as light harvesters and biomimetic complexes as molecular cocatalysts.

    Science.gov (United States)

    Wen, Fuyu; Li, Can

    2013-11-19

    Solar fuel production through artificial photosynthesis may be a key to generating abundant and clean energy, thus addressing the high energy needs of the world's expanding population. As the crucial components of photosynthesis, the artificial photosynthetic system should be composed of a light harvester (e.g., semiconductor or molecular dye), a reduction cocatalyst (e.g., hydrogenase mimic, noble metal), and an oxidation cocatalyst (e.g., photosystem II mimic for oxygen evolution from water oxidation). Solar fuel production catalyzed by an artificial photosynthetic system starts from the absorption of sunlight by the light harvester, where charge separation takes place, followed by a charge transfer to the reduction and oxidation cocatalysts, where redox reaction processes occur. One of the most challenging problems is to develop an artificial photosynthetic solar fuel production system that is both highly efficient and stable. The assembly of cocatalysts on the semiconductor (light harvester) not only can facilitate the charge separation, but also can lower the activation energy or overpotential for the reactions. An efficient light harvester loaded with suitable reduction and oxidation cocatalysts is the key for high efficiency of artificial photosynthetic systems. In this Account, we describe our strategy of hybrid photocatalysts using semiconductors as light harvesters with biomimetic complexes as molecular cocatalysts to construct efficient and stable artificial photosynthetic systems. We chose semiconductor nanoparticles as light harvesters because of their broad spectral absorption and relatively robust properties compared with a natural photosynthesis system. Using biomimetic complexes as cocatalysts can significantly facilitate charge separation via fast charge transfer from the semiconductor to the molecular cocatalysts and also catalyze the chemical reactions of solar fuel production. The hybrid photocatalysts supply us with a platform to study the

  12. Inspection logistics planning for multi-stage production systems with applications to semiconductor fabrication lines

    Science.gov (United States)

    Chen, Kyle Dakai

    Since the market for semiconductor products has become more lucrative and competitive, research into improving yields for semiconductor fabrication lines has lately received a tremendous amount of attention. One of the most critical tasks in achieving such yield improvements is to plan the in-line inspection sampling efficiently so that any potential yield problems can be detected early and eliminated quickly. We formulate a multi-stage inspection planning model based on configurations in actual semiconductor fabrication lines, specifically taking into account both the capacity constraint and the congestion effects at the inspection station. We propose a new mixed First-Come-First-Serve (FCFS) and Last-Come-First-Serve (LCFS) discipline for serving the inspection samples to expedite the detection of potential yield problems. Employing this mixed FCFS and LCFS discipline, we derive approximate expressions for the queueing delays in yield problem detection time and develop near-optimal algorithms to obtain the inspection logistics planning policies. We also investigate the queueing performance with this mixed type of service discipline under different assumptions and configurations. In addition, we conduct numerical tests and generate managerial insights based on input data from actual semiconductor fabrication lines. To the best of our knowledge, this research is novel in developing, for the first time in the literature, near-optimal results for inspection logistics planning in multi-stage production systems with congestion effects explicitly considered.

  13. Mode-Locked Semiconductor Lasers for Optical Communication Systems

    DEFF Research Database (Denmark)

    Yvind, Kresten; Larsson, David; Oxenløwe, Leif Katsuo

    2005-01-01

    We present investigations on 10 and 40 GHz monolithic mode-locked lasers for applications in optical communications systems. New all-active lasers with one to three quantum wells have been designed, fabricated and characterized....

  14. Purcell effect in an organic-inorganic halide perovskite semiconductor microcavity system

    International Nuclear Information System (INIS)

    Wang, Jun; Wang, Yafeng; Hu, Tao; Wu, Lin; Shen, Xuechu; Chen, Zhanghai; Cao, Runan; Xu, Fei; Da, Peimei; Zheng, Gengfeng; Lu, Jian

    2016-01-01

    Organic-inorganic halide perovskite semiconductors with the attractive physics properties, including strong photoluminescence (PL), huge oscillator strengths, and low nonradiative recombination losses, are ideal candidates for studying the light-matter interaction in nanostructures. Here, we demonstrate the coupling of the exciton state and the cavity mode in the lead halide perovskite microcavity system at room temperature. The Purcell effect in the coupling system is clearly observed by using angle-resolved photoluminescence spectra. Kinetic analysis based on time-resolved PL reveals that the spontaneous emission rate of the halide perovskite semiconductor is significantly enhanced at resonance of the exciton energy and the cavity mode. Our results provide the way for developing electrically driven organic polariton lasers, optical devices, and on-chip coherent quantum light sources

  15. Assessment of present and future large-scale semiconductor detector systems

    International Nuclear Information System (INIS)

    Spieler, H.G.; Haller, E.E.

    1984-11-01

    The performance of large-scale semiconductor detector systems is assessed with respect to their theoretical potential and to the practical limitations imposed by processing techniques, readout electronics and radiation damage. In addition to devices which detect reaction products directly, the analysis includes photodetectors for scintillator arrays. Beyond present technology we also examine currently evolving structures and techniques which show potential for producing practical devices in the foreseeable future

  16. Amorphous chalcogenide semiconductors for solid state dosimetric systems of high-energetic ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Shpotyuk, O. [Pedagogical University, Czestochowa (Poland)]|[Institute of Materials, Lvov (Ukraine)

    1997-12-31

    The application possibilities of amorphous chalcogenide semiconductors use as radiation-sensitive elements of high-energetic (E > 1 MeV) dosimetric systems are analysed. It is shown that investigated materials are characterized by more wide region of registered absorbed doses and low temperature threshold of radiation information bleaching in comparison with well-known analogies based on coloring oxide glasses. (author). 16 refs, 1 tab.

  17. Accelerated Aging System for Prognostics of Power Semiconductor Devices

    Science.gov (United States)

    Celaya, Jose R.; Vashchenko, Vladislav; Wysocki, Philip; Saha, Sankalita

    2010-01-01

    Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

  18. Effect of different conductivity between the spin polarons on spin injection in a ferromagnet/organic semiconductor system

    International Nuclear Information System (INIS)

    Mi Yilin; Zhang Ming; Yan Hui

    2008-01-01

    Spin injection across ferromagnet/organic semiconductor system with finite width of the layers was studied theoretically considering spin-dependent conductivity in the organic-semiconductor. It was found that the spin injection efficiency is directly dependent on the difference between the conductivity of the up-spin and down-spin polarons in the spin-injected organic system. Furthermore, the finite width of the structure, interfacial electrochemical-potential and conductivity mismatch have great influence on the spin injection process across ferromagnet/organic semiconductor interface

  19. Performance characteristics of high resolution semiconductor gamma ray spectrometry system

    International Nuclear Information System (INIS)

    Ko Ko Naing

    1994-05-01

    A high purity germanium (HPGe) gamma-ray detector has been used in Nuclear Research Laboratory, Department of Physics, Yangon University for over fourteen years. Now it is still being used and it is coupled to new peripheral devices, such as spectroscopy amplifier, analog to digital converter and computer fit-in S-100 multichannel analyser. Therefore, it is necessary to determine the important parameters: energy resolution, detecting efficiency and relative efficiency of the system. In the present work, these parameters were obtained by using mixed calibrated source. The results were compared to the data given by the manufacturer. Moreover, the parameters of another γ-ray detecting system NaI(T1) were also determined. In conclusion the results obtained from the above two measurements were compared and discussed

  20. Performance characteristics of high resolution semiconductor gamma ray spectrometry system

    Energy Technology Data Exchange (ETDEWEB)

    Naing, Ko Ko

    1994-05-01

    A high purity germanium (HPGe) gamma-ray detector has been used in Nuclear Research Laboratory, Department of Physics, Yangon University for over fourteen years. Now it is still being used and it is coupled to new peripheral devices, such as spectroscopy amplifier, analog to digital converter and computer fit-in S-100 multichannel analyser. Therefore, it is necessary to determine the important parameters: energy resolution, detecting efficiency and relative efficiency of the system. In the present work, these parameters were obtained by using mixed calibrated source. The results were compared to the data given by the manufacturer. Moreover, the parameters of another {gamma}-ray detecting system NaI(T1) were also determined. In conclusion the results obtained from the above two measurements were compared and discussed

  1. Semiconductor cleaning liquid delivery system and its filter; Handotaiyo seijo yakueki kyokyu system to filter

    Energy Technology Data Exchange (ETDEWEB)

    Saito, T. [Kanto Chemical Co. Inc., Tokyo (Japan); Hayama, H.; Sakka, T. [Nitto Denko Corp., Osaka (Japan)

    1994-11-30

    Most of chemicals used for producing semiconductors are supplied automatically by a chemical delivery system to production devices. This paper explains the current status and the trends of the system. This system supplies the chemicals in the order of a tank lorry, a storage tank, a supply tank, a filter and a production device, and the transfer is performed receiving a supply signal from the supply tank and the production device. The transfer may be done through a dilution equipment. Filters currently used have membrane pore sizes of 0.2 to 0.1 microns as prefilters, and 0.1 to 0.05 microns as final filters. Chemicals used are diverse and can be divided into acid-, alkaline-, and solvent-based groups. Fluorine resin filters are used for acid- and alkaline-resistant applications, and SUS/fluorine resin filters for solvent-resistant applications. Use of large-sized filters of element construction with a membrane area of 1 m{sup 2} class is increasing recently in addition to selection from a performance viewpoint, including particle removing performance. 9 figs., 7 tabs.

  2. Particle dispersing system and method for testing semiconductor manufacturing equipment

    Science.gov (United States)

    Chandrachood, Madhavi; Ghanayem, Steve G.; Cantwell, Nancy; Rader, Daniel J.; Geller, Anthony S.

    1998-01-01

    The system and method prepare a gas stream comprising particles at a known concentration using a particle disperser for moving particles from a reservoir of particles into a stream of flowing carrier gas. The electrostatic charges on the particles entrained in the carrier gas are then neutralized or otherwise altered, and the resulting particle-laden gas stream is then diluted to provide an acceptable particle concentration. The diluted gas stream is then split into a calibration stream and the desired output stream. The particles in the calibration stream are detected to provide an indication of the actual size distribution and concentration of particles in the output stream that is supplied to a process chamber being analyzed. Particles flowing out of the process chamber within a vacuum pumping system are detected, and the output particle size distribution and concentration are compared with the particle size distribution and concentration of the calibration stream in order to determine the particle transport characteristics of a process chamber, or to determine the number of particles lodged in the process chamber as a function of manufacturing process parameters such as pressure, flowrate, temperature, process chamber geometry, particle size, particle charge, and gas composition.

  3. Diagnosing modern semiconductor processes with the new generation of Atomika TXRF systems

    International Nuclear Information System (INIS)

    Dobler, M.; Jung, M.; Greithanner, S.

    2000-01-01

    Responding to the latest demands in semiconductor process technology, ATOMIKA Instruments has developed a new TXRF surface analyzer generation TXRF 8300/8200W for wafer sizes up to 300 mm. This new tool set provides extended automation features for routine measurements in daily quality control as for unconventional demands in scientific work. The efficiency of the systems is illustrated and compared to the older TXRF 8030W generation. Measurement results gained on usual contaminated wafer surfaces as well as on new semiconductor material substrates are presented and prove the advantages of the improvements and novelties. The possibility to perform an analytical study at thin layers to determine layer thickness and density is demonstrated. A summary of the newest measurement results using these instruments and an outlook for further developments is given. (author)

  4. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun

    2013-03-05

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number of valence electrons is smaller or equal to that of Mo. Doping of atoms from the VIIB to IIB groups becomes energetically less and less favorable. Magnetism is observed for Mn, Fe, Co, Zn, Cd, and Hg doping, while for the other dopants from these groups it is suppressed by Jahn-Teller distortions. Analysis of the binding energies and magnetic properties indicates that (Mo,X)S2 (X=Mn, Fe, Co, and Zn) are promising systems to explore two-dimensional diluted magnetic semiconductors.

  5. Prepared to react? Assessing the functional capacity of the primary health care system in rural Orissa, India to respond to the devastating flood of September 2008

    Directory of Open Access Journals (Sweden)

    Michael Marx

    2012-03-01

    Full Text Available Background: Early detection of an impending flood and the availability of countermeasures to deal with it can significantly reduce its health impacts. In developing countries like India, public primary health care facilities are frontline organizations that deal with disasters particularly in rural settings. For developing robust counter reacting systems evaluating preparedness capacities within existing systems becomes necessary. Objective: The objective of the study is to assess the functional capacity of the primary health care system in Jagatsinghpur district of rural Orissa in India to respond to the devastating flood of September 2008. Methods: An onsite survey was conducted in all 29 primary and secondary facilities in five rural blocks (administrative units of Jagatsinghpur district in Orissa state. A pre-tested structured questionnaire was administered face to face in the facilities. The data was entered, processed and analyzed using STATA® 10. Results: Data from our primary survey clearly shows that the healthcare facilities are ill prepared to handle the flood despite being faced by them annually. Basic utilities like electricity backup and essential medical supplies are lacking during floods. Lack of human resources along with missing standard operating procedures; pre-identified communication and incident command systems; effective leadership; and weak financial structures are the main hindering factors in mounting an adequate response to the floods. Conclusion: The 2008 flood challenged the primary curative and preventive health care services in Jagatsinghpur. Simple steps like developing facility specific preparedness plans which detail out standard operating procedures during floods and identify clear lines of command will go a long way in strengthening the response to future floods. Performance critiques provided by the grass roots workers, like this one, should be used for institutional learning and effective preparedness

  6. Hydrogen discharges operating at atmospheric pressure in a semiconductor gas discharge system

    Energy Technology Data Exchange (ETDEWEB)

    Aktas, K; Acar, S; Salamov, B G [Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Ankara (Turkey)

    2011-08-15

    Analyses of physical processes which initiate electrical breakdown and spatial stabilization of current and control it with a photosensitive cathode in a semiconductor gas discharge system (SGDS) are carried out in a wide pressure range up to atmospheric pressure p, interelectrode distance d and diameter D of the electrode areas of the semiconductor cathode. The study compares the breakdown and stability curves of the gas discharge in the planar SGDS where the discharge gap is filled with hydrogen and air in two cases. The impact of the ionizing component of the discharge plasma on the control of the stable operation of the planar SGDS is also investigated at atmospheric pressure. The loss of stability is primarily due to modification of the semiconductor-cathode properties on the interaction with low-energy hydrogen ions and the formation of a space charge of positive ions in the discharge gap which changes the discharge from Townsend to glow type. The experimental results show that the discharge current in H{sub 2} is more stable than in air. The breakdown voltages are measured for H{sub 2} and air with parallel-plane electrodes, for pressures between 28 and 760 Torr. The effective secondary electron emission (SEE) coefficient is then determined from the breakdown voltage results and compared with the experimental results. The influence of the SEE coefficient is stated in terms of the differences between the experimental breakdown law.

  7. Research and Design on a Product Data Definition System of Semiconductor Packaging Industry

    Science.gov (United States)

    Shi, Jinfei; Ma, Qingyao; Zhou, Yifan; Chen, Ruwen

    2017-12-01

    This paper develops a product data definition (PDD) system for a semiconductor packaging and testing company with independent intellectual property rights. The new PDD system can solve the problems such as, the effective control of production plans, the timely feedback of production processes, and the efficient schedule of resources. Firstly, this paper introduces the general requirements of the PDD system and depicts the operation flow and the data flow of the PDD system. Secondly, the overall design scheme of the PDD system is put forward. After that, the physical data model is developed using the Power Designer15.0 tool, and the database system is built. Finally, the function realization and running effects of the PDD system are analysed. The successful operation of the PDD system can realize the information flow among various production departments of the enterprise to meet the standard of the enterprise manufacturing integration and improve the efficiency of production management.

  8. Optical Resonance of A Three-Level System in Semiconductor Quantum Dots

    Directory of Open Access Journals (Sweden)

    Nguyen Van Hieu

    2017-11-01

    Full Text Available The optical resonance of a three-level system of the strongly correlated electrons in the twolevel semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc

  9. System tests of radiation hard optical links for the ATLAS semiconductor tracker

    International Nuclear Information System (INIS)

    Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

    2000-01-01

    A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

  10. The system of digital-image optical microscope in semiconductor particle detector development

    International Nuclear Information System (INIS)

    Han Lixiang; Li Zhankui; Jin Genming; Wang Zhusheng; Xiao Guoqing

    2009-01-01

    Optical microscopic detection is very important in the process of semiconductor particle detector development. A system of digital-image optical microscope has been constructed with rather low price, which performance is comparable with the moderate-level imports. The system mounts powerful dry objective, and a 2μm resolution could be achieved. Observations with bright and dark field, polarized light,and interference light can be carried out on it. The system have large area on-line monitor,and the photographic device can be controlled by PC. It can be used in the control of defects and contaminations, pattern test, identification of crystal backing, inspection of the smoothness and the flatness of the crystal surface. It can also be used in some precise procedures, such as test, assembly, packaging and repairing. The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder. The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference. In the article, the application of this system for semiconductor particle detector development has been illustrated, and the construction information has been described in detail. (authors)

  11. Energy-Saving Benefits of Adiabatic Humidification in the Air Conditioning Systems of Semiconductor Cleanrooms

    Directory of Open Access Journals (Sweden)

    Min-Suk Jo

    2017-11-01

    Full Text Available This paper aimed to evaluate the applicability of adiabatic humidification in the heating, ventilation, and air conditioning (HVAC systems of semiconductor cleanrooms. Accurate temperature and humidity control are essential in semiconductor cleanrooms and high energy consumption steam humidification is commonly used. Therefore, we propose an adiabatic humidification system employing a pressurized water atomizer to reduce the energy consumption. The annual energy consumption of three different HVAC systems were analyzed to evaluate the applicability of adiabatic humidification. The studied cases were as follows: (1 CASE 1: a make-up air unit (MAU with a steam humidifier, a dry cooling coil (DCC, and a fan filter unit (FFU; (2 CASE 2: a MAU with the pressurized water atomizer, a DCC, and a FFU; and (3 CASE 3: a MAU, a DCC, and a FFU, and the pressurized water atomizer installed in the return duct. The energy saving potential of adiabatic humidification over steam humidification has been proved, with savings of 8% and 23% in CASE 2 and CASE 3 compared to CASE 1, respectively. Furthermore, the pressurized water atomizer installed in the return duct exhibits greater energy saving effect than when installed in the MAU.

  12. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  13. The Data Acquisition and Calibration System for the ATLAS Semiconductor Tracker

    CERN Document Server

    Abdesselam, A; Barr, A J; Bell, P; Bernabeu, J; Butterworth, J M; Carter, J R; Carter, A A; Charles, E; Clark, A; Colijn, A P; Costa, M J; Dalmau, J M; Demirkoz, B; Dervan, P J; Donega, M; D'Onifrio, M; Escobar, C; Fasching, D; Ferguson, D P S; Ferrari, P; Ferrère, D; Fuster, J; Gallop, B; García, C; González, S; González-Sevilla, S; Goodrick, M J; Gorisek, A; Greenall, A; Grillo, A A; Hessey, N P; Hill, J C; Jackson, J N; Jared, R C; Johannson, P D C; de Jong, P; Joseph, J; Lacasta, C; Lane, J B; Lester, C G; Limper, M; Lindsay, S W; McKay, R L; Magrath, C A; Mangin-Brinet, M; Martí i García, S; Mellado, B; Meyer, W T; Mikulec, B; Minano, M; Mitsou, V A; Moorhead, G; Morrissey, M; Paganis, E; Palmer, M J; Parker, M A; Pernegger, H; Phillips, A; Phillips, P W; Postranecky, M; Robichaud-Véronneau, A; Robinson, D; Roe, S; Sandaker, H; Sciacca, F; Sfyrla, A; Stanecka, E; Stapnes, S; Stradling, A; Tyndel, M; Tricoli, A; Vickey, T; Vossebeld, J H; Warren, M R M; Weidberg, A R; Wells, P S; Wu, S L

    2008-01-01

    The SemiConductor Tracker (SCT) data acquisition (DAQ) system will calibrate, configure, and control the approximately six million front-end channels of the ATLAS silicon strip detector. It will provide a synchronized bunch-crossing clock to the front-end modules, communicate first-level triggers to the front-end chips, and transfer information about hit strips to the ATLAS high-level trigger system. The system has been used extensively for calibration and quality assurance during SCT barrel and endcap assembly and for performance confirmation tests after transport of the barrels and endcaps to CERN. Operating in data-taking mode, the DAQ has recorded nearly twenty million synchronously-triggered events during commissioning tests including almost a million cosmic ray triggered events. In this paper we describe the components of the data acquisition system, discuss its operation in calibration and data-taking modes and present some detector performance results from these tests.

  14. The data acquisition and calibration system for the ATLAS Semiconductor Tracker

    International Nuclear Information System (INIS)

    Abdesselam, A; Barr, A J; Demirkoez, B; Barber, T; Carter, J R; Bell, P; Bernabeu, J; Costa, M J; Escobar, C; Butterworth, J M; Carter, A A; Dalmau, J M; Charles, E; Fasching, D; Ferguson, D P S; Clark, A; Donega, M; D'Onifrio, M; Colijn, A-P; Dervan, P J

    2008-01-01

    The SemiConductor Tracker (SCT) data acquisition (DAQ) system will calibrate, configure, and control the approximately six million front-end channels of the ATLAS silicon strip detector. It will provide a synchronized bunch-crossing clock to the front-end modules, communicate first-level triggers to the front-end chips, and transfer information about hit strips to the ATLAS high-level trigger system. The system has been used extensively for calibration and quality assurance during SCT barrel and endcap assembly and for performance confirmation tests after transport of the barrels and endcaps to CERN. Operating in data-taking mode, the DAQ has recorded nearly twenty million synchronously-triggered events during commissioning tests including almost a million cosmic ray triggered events. In this paper we describe the components of the data acquisition system, discuss its operation in calibration and data-taking modes and present some detector performance results from these tests

  15. Transport phenomena and kinetic theory applications to gases, semiconductors, photons, and biological systems

    CERN Document Server

    Gabetta, Ester

    2007-01-01

    The study of kinetic equations related to gases, semiconductors, photons, traffic flow, and other systems has developed rapidly in recent years because of its role as a mathematical tool in many applications in areas such as engineering, meteorology, biology, chemistry, materials science, nanotechnology, and pharmacy. Written by leading specialists in their respective fields, this book presents an overview of recent developments in the field of mathematical kinetic theory with a focus on modeling complex systems, emphasizing both mathematical properties and their physical meaning. The overall presentation covers not only modeling aspects and qualitative analysis of mathematical problems, but also inverse problems, which lead to a detailed assessment of models in connection with their applications, and to computational problems, which lead to an effective link of models to the analysis of real-world systems. "Transport Phenomena and Kinetic Theory" is an excellent self-study reference for graduate students, re...

  16. System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

    Science.gov (United States)

    Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

    2013-10-22

    A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

  17. Advancing semiconductor-electrocatalyst systems: application of surface transformation films and nanosphere lithography.

    Science.gov (United States)

    Brinkert, Katharina; Richter, Matthias H; Akay, Ömer; Giersig, Michael; Fountaine, Katherine T; Lewerenz, Hans-Joachim

    2018-05-24

    Photoelectrochemical (PEC) cells offer the possibility of carbon-neutral solar fuel production through artificial photosynthesis. The pursued design involves technologically advanced III-V semiconductor absorbers coupled via an interfacial film to an electrocatalyst layer. These systems have been prepared by in situ surface transformations in electrochemical environments. High activity nanostructured electrocatalysts are required for an efficiently operating cell, optimized in their optical and electrical properties. We demonstrate that shadow nanosphere lithography (SNL) is an auspicious tool to systematically create three-dimensional electrocatalyst nanostructures on the semiconductor photoelectrode through controlling their morphology and optical properties. First results are demonstrated by means of the photoelectrochemical production of hydrogen on p-type InP photocathodes where hitherto applied photoelectrodeposition and SNL-deposited Rh electrocatalysts are compared based on their J-V and spectroscopic behavior. We show that smaller polystyrene particle masks achieve higher defect nanostructures of rhodium on the photoelectrode which leads to a higher catalytic activity and larger short circuit currents. Structural analyses including HRSEM and the analysis of the photoelectrode surface composition by using photoelectron spectroscopy support and complement the photoelectrochemical observations. The optical performance is further compared to theoretical models of the nanostructured photoelectrodes on light scattering and propagation.

  18. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  19. Spin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures

    Science.gov (United States)

    Maksimov, A. A.; Yakovlev, D. R.; Debus, J.; Tartakovskii, I. I.; Waag, A.; Karczewski, G.; Wojtowicz, T.; Kossut, J.; Bayer, M.

    2010-07-01

    The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te were studied optically and simulated numerically. In samples with inhomogeneous magnetic ion distribution, these dynamics are contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. A spin-diffusion coefficient of 7×10-8cm2/s was evaluated for Zn0.99Mn0.01Se from comparison of experiment and theory. Calculations of the exciton giant Zeeman splitting and the magnetization dynamics in ordered alloys and digitally grown parabolic quantum wells show perfect agreement with the experimental data. In both structure types, spin diffusion contributes essentially to the magnetization dynamics.

  20. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  1. Organic semiconductor wastewater treatment using a four-stage Bardenpho with membrane system.

    Science.gov (United States)

    Chung, Jinwook; Fleege, Daniel; Ong, Say Kee; Lee, Yong-Woo

    2014-01-01

    Electronic wastewater from a semiconductor plant was treated with a pilot-scale four-stage Bardenpho process with membrane system. The system was operated over a 14-month period with an overall hydraulic retention time (HRT) ranging from 9.5 to 30 h. With a few exceptions, the pilot plant consistently treated the electronic wastewater with an average removal efficiency of chemical oxygen demand (COD) and total nitrogen of 97% and 93%, respectively, and achieving effluent quality of COD<15 mg/L, turbidity<1, and silt density index<1. Based on removal efficiencies of the pilot plant, it is possible to lower the HRT to less than 9.5 h to achieve comparable removal efficiencies. An energy-saving configuration where an internal recycle line was omitted and the biomass recycle was rerouted to the pre-anoxic tank, can reduce energy consumption by 8.6% and gave removal efficiencies that were similar to the Bardenpho process. The system achieved pre-anoxic and post-anoxic specific denitrification rate values with a 95% confidence interval of 0.091 ± 0.011 g NO₃-N/g MLVSS d and 0.087 ± 0.016 g NO₃-N/g MLVSS d, respectively. The effluent from the four-stage Bardenpho with membrane system can be paired with a reverse osmosis system to provide further treatment for reuse purposes.

  2. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, J-S.; Urashima, K. [McMaster Univ., McIARS and Dept. Eng. Phys., Hamilton, Ontario (Canada)

    2009-07-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C{sub 2}F{sub 6} (2000ppm)/ CF{sub 4}(1000ppm)/ N{sub 2}O(1000ppm)/ N{sub 2}/ Air mixture, 54% of C{sub 2}F{sub 6} and 32% of CF{sub 4} were decomposed by the plasma reactor and 100% of C{sub 2}F{sub 6} and 98% of CF{sub 4} were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF{sub 3} (2000ppm)/ SiF{sub 4}(1000ppm)/ N{sub 2}O(200ppm)/ N{sub 2}/ Air mixture, 92% of NF{sub 3} and 32% of SiF{sub 4} were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  3. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    International Nuclear Information System (INIS)

    Chang, J-S.; Urashima, K.

    2009-01-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C 2 F 6 (2000ppm)/ CF 4 (1000ppm)/ N 2 O(1000ppm)/ N 2 / Air mixture, 54% of C 2 F 6 and 32% of CF 4 were decomposed by the plasma reactor and 100% of C 2 F 6 and 98% of CF 4 were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF 3 (2000ppm)/ SiF 4 (1000ppm)/ N 2 O(200ppm)/ N 2 / Air mixture, 92% of NF 3 and 32% of SiF 4 were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  4. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System.

    Science.gov (United States)

    He, Yong; Zhu, Ka-Di

    2017-06-20

    In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP) and the excitons in semiconductor quantum dots (SQDs) in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  5. Fano Effect and Quantum Entanglement in Hybrid Semiconductor Quantum Dot-Metal Nanoparticle System

    Directory of Open Access Journals (Sweden)

    Yong He

    2017-06-01

    Full Text Available In this paper, we review the investigation for the light-matter interaction between surface plasmon field in metal nanoparticle (MNP and the excitons in semiconductor quantum dots (SQDs in hybrid SQD-MNP system under the full quantum description. The exciton-plasmon interaction gives rise to the modified decay rate and the exciton energy shift which are related to the exciton energy by using a quantum transformation method. We illustrate the responses of the hybrid SQD-MNP system to external field, and reveal Fano effect shown in the absorption spectrum. We demonstrate quantum entanglement between two SQD mediated by surface plasmon field. In the absence of a laser field, concurrence of quantum entanglement will disappear after a few ns. If the laser field is present, the steady states appear, so that quantum entanglement produced will reach a steady-state entanglement. Because one of all optical pathways to induce Fano effect refers to the generation of quantum entangled states, It is shown that the concurrence of quantum entanglement can be obtained by observation for Fano effect. In a hybrid system including two MNP and a SQD, because the two Fano quantum interference processes share a segment of all optical pathways, there is correlation between the Fano effects of the two MNP. The investigations for the light-matter interaction in hybrid SQD-MNP system can pave the way for the development of the optical processing devices and quantum information based on the exciton-plasmon interaction.

  6. Optical response of hybrid semiconductor quantum dot-metal nanoparticle system: Beyond the dipole approximation

    Science.gov (United States)

    Mohammadzadeh, Atefeh; Miri, MirFaez

    2018-01-01

    We study the response of a semiconductor quantum dot-metal nanoparticle system to an external field E 0 cos ( ω t ) . The borders between Fano, double peaks, weak transition, strong transition, and bistability regions of the phase diagram move considerably as one regards the multipole effects. The exciton-induced transparency is an artifact of the dipole approximation. The absorption of the nanoparticle, the population inversion of the quantum dot, the upper and lower limits of intensity where bistability occurs, the characteristic time to reach the steady state, and other features of the hybrid system change due to the multipole effects. The phase diagrams corresponding to the fields parallel and perpendicular to the axis of system are quite distinguishable. Thus, both the intensity and the polarization of the incident field can be used to control the system. In particular, the incident polarization can be used to switch on and switch off the bistable behavior. For applications such as miniaturized bistable devices and nanosensors sensitive to variations of the dielectric constant of the surrounding medium, multipole effects must be considered.

  7. In situ measurement of the energy gap of a semiconductor using a microcontroller-based system

    International Nuclear Information System (INIS)

    Mukaro, R; Taele, B M; Tinarwo, D

    2006-01-01

    This paper describes a microcontroller-based laboratory technique for automatic in situ measurement of the energy gap of germanium. The design is based on the original undergraduate laboratory experiment in which students manually measure the variation of the reverse saturation current of a germanium diode with temperature using a current-to-voltage converter. After collecting the results students later analyse them to determine the energy gap of the semiconductor. The objective of this work was to introduce interfacing and computerized measurement systems in the undergraduate laboratory. The microcontroller-based data acquisition system and its implementation in automatic in situ measurement of the band gap of germanium diode is presented. The system which uses an LM335 temperature sensor for measuring temperature transmits the measured data to the computer via the RS232 serial port while a C++ software program developed to run on the computer monitors the serial port for incoming information sent by the microcontroller. This information is displayed on the computer screen as it comes and automatically saved to a data file. Once all the data are received, the computer performs least-squares fit to the data to compute the energy gap which is displayed on the screen together with its error estimate. For the IN34A germanium diode used the value of the energy gap obtained was 0.50 ± 0.02 eV

  8. In situ measurement of the energy gap of a semiconductor using a microcontroller-based system

    Energy Technology Data Exchange (ETDEWEB)

    Mukaro, R [Department of Physics, Bindura University of Science, P/Bag 1020, Bindura (Zimbabwe); Taele, B M [Department of Physics and Electronics, National University of Lesotho, Roma 180 (Lesotho); Tinarwo, D [Department of Physics, Bindura University of Science, P/Bag 1020, Bindura (Zimbabwe)

    2006-05-01

    This paper describes a microcontroller-based laboratory technique for automatic in situ measurement of the energy gap of germanium. The design is based on the original undergraduate laboratory experiment in which students manually measure the variation of the reverse saturation current of a germanium diode with temperature using a current-to-voltage converter. After collecting the results students later analyse them to determine the energy gap of the semiconductor. The objective of this work was to introduce interfacing and computerized measurement systems in the undergraduate laboratory. The microcontroller-based data acquisition system and its implementation in automatic in situ measurement of the band gap of germanium diode is presented. The system which uses an LM335 temperature sensor for measuring temperature transmits the measured data to the computer via the RS232 serial port while a C++ software program developed to run on the computer monitors the serial port for incoming information sent by the microcontroller. This information is displayed on the computer screen as it comes and automatically saved to a data file. Once all the data are received, the computer performs least-squares fit to the data to compute the energy gap which is displayed on the screen together with its error estimate. For the IN34A germanium diode used the value of the energy gap obtained was 0.50 {+-} 0.02 eV.

  9. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  10. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  11. The next generation in optical transport semiconductors: IC solutions at the system level

    Science.gov (United States)

    Gomatam, Badri N.

    2005-02-01

    In this tutorial overview, we survey some of the challenging problems facing Optical Transport and their solutions using new semiconductor-based technologies. Advances in 0.13um CMOS, SiGe/HBT and InP/HBT IC process technologies and mixed-signal design strategies are the fundamental breakthroughs that have made these solutions possible. In combination with innovative packaging and transponder/transceiver architectures IC approaches have clearly demonstrated enhanced optical link budgets with simultaneously lower (perhaps the lowest to date) cost and manufacturability tradeoffs. This paper will describe: *Electronic Dispersion Compensation broadly viewed as the overcoming of dispersion based limits to OC-192 links and extending link budgets, *Error Control/Coding also known as Forward Error Correction (FEC), *Adaptive Receivers for signal quality monitoring for real-time estimation of Q/OSNR, eye-pattern, signal BER and related temporal statistics (such as jitter). We will discuss the theoretical underpinnings of these receiver and transmitter architectures, provide examples of system performance and conclude with general market trends. These Physical layer IC solutions represent a fundamental new toolbox of options for equipment designers in addressing systems level problems. With unmatched cost and yield/performance tradeoffs, it is expected that IC approaches will provide significant flexibility in turn, for carriers and service providers who must ultimately manage the network and assure acceptable quality of service under stringent cost constraints.

  12. Based on Weibull Information Fusion Analysis Semiconductors Quality the Key Technology of Manufacturing Execution Systems Reliability

    Science.gov (United States)

    Huang, Zhi-Hui; Tang, Ying-Chun; Dai, Kai

    2016-05-01

    Semiconductor materials and Product qualified rate are directly related to the manufacturing costs and survival of the enterprise. Application a dynamic reliability growth analysis method studies manufacturing execution system reliability growth to improve product quality. Refer to classical Duane model assumptions and tracking growth forecasts the TGP programming model, through the failure data, established the Weibull distribution model. Combining with the median rank of average rank method, through linear regression and least squares estimation method, match respectively weibull information fusion reliability growth curve. This assumption model overcome Duane model a weakness which is MTBF point estimation accuracy is not high, through the analysis of the failure data show that the method is an instance of the test and evaluation modeling process are basically identical. Median rank in the statistics is used to determine the method of random variable distribution function, which is a good way to solve the problem of complex systems such as the limited sample size. Therefore this method has great engineering application value.

  13. ASIC Wafer Test System for the ATLAS Semiconductor Tracker Front-End Chip

    International Nuclear Information System (INIS)

    Anghinolfi, F.; Bialas, W.; Busek, N.; Ciocio, A.; Cosgrove, D.; Fadeyev, V.; Flacco, C.; Gilchriese, M.; Grillo, A.A.; Haber, C.; Kaplon, J.; Lacasta, C.; Murray, W.; Niggli, H.; Pritchard, T.; Rosenbaum, F.; Spieler, H.; Stezelberger, T.; Vu, C.; Wilder, M.; Yaver, H.; Zetti, F.

    2002-01-01

    An ASIC wafer test system has been developed to provide comprehensive production screening of the ATLAS Semiconductor Tracker front-end chip (ABCD3T). The ABCD3T[1] features a 128-channel analog front-end, a digital pipeline, and communication circuitry, clocked at 40 MHz, which is the bunch crossing frequency at the LHC (Large Hadron Collider). The tester measures values and tolerance ranges of all critical IC parameters, including DC parameters, electronic noise, time resolution, clock levels and clock timing. The tester is controlled by an FPGA (ORCA3T) programmed to issue the input commands to the IC and to interpret the output data. This allows the high-speed wafer-level IC testing necessary to meet the production schedule. To characterize signal amplitudes and phase margins, the tester utilizes pin-driver, delay, and DAC chips, which control the amplitudes and delays of signals sent to the IC under test. Output signals from the IC under test go through window comparator chips to measure their levels. A probe card has been designed specifically to reduce pick-up noise that can affect the measurements. The system can operate at frequencies up to 100 MHz to study the speed limits of the digital circuitry before and after radiation damage. Testing requirements and design solutions are presented

  14. On nonequilibrium many-body systems 2: ultra fast relaxation phenomena in semiconductors

    International Nuclear Information System (INIS)

    Algarte, A.C.S.; Vasconcellos, A.R.; Luzzi, R.

    1986-01-01

    The application of the nonequilibrium statistical operator (NSO) method to the study of the irreversible thermodynamics and optical responses of semiconductors probed by ultrafast laser spectroscopy is described. (Author) [pt

  15. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    Science.gov (United States)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  16. Quantitative imaging of turbulent and reacting flows

    Energy Technology Data Exchange (ETDEWEB)

    Paul, P.H. [Sandia National Laboratories, Livermore, CA (United States)

    1993-12-01

    Quantitative digital imaging, using planar laser light scattering techniques is being developed for the analysis of turbulent and reacting flows. Quantitative image data, implying both a direct relation to flowfield variables as well as sufficient signal and spatial dynamic range, can be readily processed to yield two-dimensional distributions of flowfield scalars and in turn two-dimensional images of gradients and turbulence scales. Much of the development of imaging techniques to date has concentrated on understanding the requisite molecular spectroscopy and collision dynamics to be able to determine how flowfield variable information is encoded into the measured signal. From this standpoint the image is seen as a collection of single point measurements. The present effort aims at realizing necessary improvements in signal and spatial dynamic range, signal-to-noise ratio and spatial resolution in the imaging system as well as developing excitation/detection strategies which provide for a quantitative measure of particular flowfield scalars. The standard camera used for the study is an intensified CCD array operated in a conventional video format. The design of the system was based on detailed modeling of signal and image transfer properties of fast UV imaging lenses, image intensifiers and CCD detector arrays. While this system is suitable for direct scalar imaging, derived quantities (e.g. temperature or velocity images) require an exceptionally wide dynamic range imaging detector. To apply these diagnostics to reacting flows also requires a very fast shuttered camera. The authors have developed and successfully tested a new type of gated low-light level detector. This system relies on fast switching of proximity focused image-diode which is direct fiber-optic coupled to a cooled CCD array. Tests on this new detector show significant improvements in detection limit, dynamic range and spatial resolution as compared to microchannel plate intensified arrays.

  17. A step towards molecular electronics. The ferrocene molecule on a metal-semiconductor system

    Energy Technology Data Exchange (ETDEWEB)

    Schmeidel, Jedrzej Piotr

    2012-05-14

    In the first part, the domain walls on Ag {radical}(3) x {radical}(3) are investigated and structural and electronic model are introduced and discussed. Furthermore, the temperature dependence is investigated, showing the Peierls-type transition along the domain wall chain. In the second part, the high resolution STM data of the local adsorption geometry of FDT on Ag {radical}(3)< x {radical}(3) are presented. The comparison of theoretical results obtained for the molecule, on Ag(lll) and Ag {radical}(3) x {radical}(3) surfaces, with STM measurement at RT, support the chemisorption with thiolate bonds to the Ag trimers on the HCT surface. The molecule is aligned with the Cp-Fe-Cp axis parallel to the surface, while the rotational freedom of the molecule is limited due to chemisorption. The presented adsorption model is supported by experiment and simulation. In the third part, the perfect Ag {radical}(3) x {radical}(3) is prepared and investigated by means of STM, focusing on structural and electronic characteristics. The different reconstructions and amounts of Ag on Si are investigated; the submonolayer amounts, Ag {radical}(3) x {radical}(3) wetting layers, perfect epitaxial layers and multilayer systems. The influence of wetting layer on electronic character of deposited Ag nanostructures is studied. The occurrence of effective single and double barriers in tunnelling microscopy and spectroscopy for the Ag {radical}(3) x <{radical}(3) system is investigated in the monolayer regime by varying the measurement and preparation conditions. The Coulomb Blockade oscillations are found for granular multilayer Ag films, whereas similar structures with existence of Ag {radical}(3) x {radical}(3) show only a single barrier characteristic. The vertical transport properties in this metal/ semiconductor system depend on the structure and bonding on the atomic scale and on the lateral two-dimensional properties of the interface.

  18. Nonequilibrium spin transport through a diluted magnetic semiconductor quantum dot system with noncollinear magnetization

    International Nuclear Information System (INIS)

    Ma, Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Gee

    2013-01-01

    The spin-dependent transport through a diluted magnetic semiconductor quantum dot (QD) which is coupled via magnetic tunnel junctions to two ferromagnetic leads is studied theoretically. A noncollinear system is considered, where the QD is magnetized at an arbitrary angle with respect to the leads’ magnetization. The tunneling current is calculated in the coherent regime via the Keldysh nonequilibrium Green’s function (NEGF) formalism, incorporating the electron–electron interaction in the QD. We provide the first analytical solution for the Green’s function of the noncollinear DMS quantum dot system, solved via the equation of motion method under Hartree–Fock approximation. The transport characteristics (charge and spin currents, and tunnel magnetoresistance (TMR)) are evaluated for different voltage regimes. The interplay between spin-dependent tunneling and single-charge effects results in three distinct voltage regimes in the spin and charge current characteristics. The voltage range in which the QD is singly occupied corresponds to the maximum spin current and greatest sensitivity of the spin current to the QD magnetization orientation. The QD device also shows transport features suitable for sensor applications, i.e., a large charge current coupled with a high TMR ratio. - Highlights: ► The spin polarized transport through a diluted magnetic quantum dot is studied. ► The model is based on the Green’s function and the equation of motion method.► The charge and spin currents and tunnel magnetoresistance (TMR) are investigated. ► The system is suitable for current-induced spin-transfer torque application. ► A large tunneling current and a high TMR are possible for sensor application.

  19. Photocatalytic oxidation of organic compounds in a hybrid system composed of a molecular catalyst and visible light-absorbing semiconductor.

    Science.gov (United States)

    Zhou, Xu; Li, Fei; Li, Xiaona; Li, Hua; Wang, Yong; Sun, Licheng

    2015-01-14

    Photocatalytic oxidation of organic compounds proceeded efficiently in a hybrid system with ruthenium aqua complexes as catalysts, BiVO4 as a light absorber, [Co(NH3)5Cl](2+) as a sacrificial electron acceptor and water as an oxygen source. The photogenerated holes in the semiconductor are used to oxidize molecular catalysts into the high-valent Ru(IV)=O intermediates for 2e(-) oxidation.

  20. Rapid supersensitive laser-semiconductor monitoring system. Time period covered: Dec. 15, 1993 - Dec. 15, 1994

    International Nuclear Information System (INIS)

    Pugatch, V.M.

    2001-01-01

    The creation of the rapid and sensitive system for the determination of the Alpha-radioactivity in the Environmental samples has been determined as the main goal of the Research Contract No. 7200RO/RB. As a result of the first stage of the research accomplished in the year 1993, the prototype of the system based on the combination of the laser photoionization mass spectrometry and many-channel alpha-spectrometer has been built and tested. To improve the sensitivity it was proposed to add one more stage to the laser photoionization mass-spectrometer. To develop the high position sensitivity of the system it was proposed to include into the alpha-radiometer SI strip-detector with submicron position sensitivity. Hardware and software for the laser-semiconductor monitoring system of alpha-radionuclides in the environment have been further developed and tested in frames of the IAEA Research Contract No. 7200/R1/RB. Optimization of the sample evaporation with one more stage of photoionization has been successfully performed in the laser photoionization mass-spectrometer. The automatization of the measurement procedure is under way by means of the IBM PC-386 and specially designed electronic units. The evaluated sensitivity of the new set-up is in the range of 1.0 Bq/kg. A bulk measurement of the alpha-radioactivity concentration in soil samples from the Chernobyl region (100 km) have been performed by means of thick samples method and built under this contract alpha-radiometer with large area SI semiconductor detectors. The lowest detectable level was in the range 100 Bq/kg without any radiochemical separation. Comparison with the data obtained for the same probes by means of the thin sample (with radiochemical separation) has shown higher Pu-concentration values obtained by means of the thick samples. For the first time the Sl-strip-detector with 128 channels has been applied for the alpha-radiometry purposes. Different read-out electronics (including the most

  1. Multiphase reacting flows modelling and simulation

    CERN Document Server

    Marchisio, Daniele L

    2007-01-01

    The papers in this book describe the most widely applicable modeling approaches and are organized in six groups covering from fundamentals to relevant applications. In the first part, some fundamentals of multiphase turbulent reacting flows are covered. In particular the introduction focuses on basic notions of turbulence theory in single-phase and multi-phase systems as well as on the interaction between turbulence and chemistry. In the second part, models for the physical and chemical processes involved are discussed. Among other things, particular emphasis is given to turbulence modeling strategies for multiphase flows based on the kinetic theory for granular flows. Next, the different numerical methods based on Lagrangian and/or Eulerian schemes are presented. In particular the most popular numerical approaches of computational fluid dynamics codes are described (i.e., Direct Numerical Simulation, Large Eddy Simulation, and Reynolds-Averaged Navier-Stokes approach). The book will cover particle-based meth...

  2. A tool for Load Modeling in Induction Hardening Equipment Driven by Power Semiconductor Systems

    International Nuclear Information System (INIS)

    Suarez Antola, R.; Suarez Bagnasco, D.

    2006-01-01

    Kelvin effect (Skin effect) is used in surface hardening produced by induction heating of gears, camforms, camshafts and other work pieces of fairly complex geometries.The induction heating equipment for surface hardening of metals and alloys (using LF or medium frequencies in the jargon of induction heating) is composed by a coil or coil assembly and a power semiconductor driving system up to 50kHz. The load seen by the driving system is equivalent to a transformer. The primary corresponds to the excitation coil or coil assembly, and the work piece corresponds to a short-circuited secondary. To asses the electrical load it is necessary to determine the variations in skin depth from place to place due to local curvature effects in the work piece, and its variations in space and time due to variations in conductivity and magnetic properties coupled with thermal effects. In these and others technical applications of Kelvin effect it is often necessary to be able to relate local skin depths with local curvatures of the surface of electrically conductive bodies.The purpose of this paper is twofold. First, derive a closed form analytical formula that relates the local skin depth with the local mean curvature and the well known skin depth for a flat conductive body. The limits of applicability of this formula are discussed. The predicted skin depths are compared with available experimental results obtained in the framework of surface hardening processes. Second, apply the above mentioned formula to describe the electrical load of the induction heating equipment in the conditions used for surface hardening. In the choice or design of an induction heating system the parameters of the intended process (depth of Kelvin effect, temperatures to be reached and duration of the heating process, amongst others) put restrictions over the coils and the power driving system. To determine the best shape and size of induction coils or coil assemblies, the complex thermal and

  3. Some aspects of theory and mathematics of thermal runaway in reacting chemical systems that may be relevant to critical behaviour in confined plasmas

    International Nuclear Information System (INIS)

    Ball, R. The

    1999-01-01

    The concept of an endothermally stabilised chemical reactor as an enthalpy coupled thermokinetic system is introduced, and given precise mathematical expression in the form of a four-dimensional dynamical system. Criteria are defined for which the system is free of all kinds of thermal misbehaviour. This important dynamical result defines bounds for a large region of the parameter space within which the reactor may be operated safely. The formalism of singularity theory is extended to bifurcation surfaces in a studio of multiplicity and stability in the CSTR problem

  4. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  5. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  6. Stochastic models for turbulent reacting flows

    Energy Technology Data Exchange (ETDEWEB)

    Kerstein, A. [Sandia National Laboratories, Livermore, CA (United States)

    1993-12-01

    The goal of this program is to develop and apply stochastic models of various processes occurring within turbulent reacting flows in order to identify the fundamental mechanisms governing these flows, to support experimental studies of these flows, and to further the development of comprehensive turbulent reacting flow models.

  7. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  8. Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems

    KAUST Repository

    Cheng, Yingchun; Guo, Z. B.; Mi, W. B.; Schwingenschlö gl, Udo; Zhu, Zhiyong

    2013-01-01

    Using first-principles calculations, we propose a two-dimensional diluted magnetic semiconductor: monolayer MoS2 doped by transition metals. Doping of transition metal atoms from the IIIB to VIB groups results in nonmagnetic states, since the number

  9. Semiconductor Metal Oxide Sensors in Water and Water Based Biological Systems

    Directory of Open Access Journals (Sweden)

    Marina V. Strobkova

    2003-10-01

    Full Text Available The results of implementation of In2O3-based semiconductor sensors for oxygen concentration evaluation in water and the LB-nutrient media (15.5 g/l Luria Broth Base, Miller (Sigma, Lot-1900 and NaCl without bacteria and with E.coli bacteria before and after UV-irradiation are presented.

  10. Calibration and validation of coarse-grained models of atomic systems: application to semiconductor manufacturing

    Science.gov (United States)

    Farrell, Kathryn; Oden, J. Tinsley

    2014-07-01

    Coarse-grained models of atomic systems, created by aggregating groups of atoms into molecules to reduce the number of degrees of freedom, have been used for decades in important scientific and technological applications. In recent years, interest in developing a more rigorous theory for coarse graining and in assessing the predictivity of coarse-grained models has arisen. In this work, Bayesian methods for the calibration and validation of coarse-grained models of atomistic systems in thermodynamic equilibrium are developed. For specificity, only configurational models of systems in canonical ensembles are considered. Among major challenges in validating coarse-grained models are (1) the development of validation processes that lead to information essential in establishing confidence in the model's ability predict key quantities of interest and (2), above all, the determination of the coarse-grained model itself; that is, the characterization of the molecular architecture, the choice of interaction potentials and thus parameters, which best fit available data. The all-atom model is treated as the "ground truth," and it provides the basis with respect to which properties of the coarse-grained model are compared. This base all-atom model is characterized by an appropriate statistical mechanics framework in this work by canonical ensembles involving only configurational energies. The all-atom model thus supplies data for Bayesian calibration and validation methods for the molecular model. To address the first challenge, we develop priors based on the maximum entropy principle and likelihood functions based on Gaussian approximations of the uncertainties in the parameter-to-observation error. To address challenge (2), we introduce the notion of model plausibilities as a means for model selection. This methodology provides a powerful approach toward constructing coarse-grained models which are most plausible for given all-atom data. We demonstrate the theory and

  11. Characterization of limestone reacted with acid-mine drainage in a pulsed limestone bed treatment system at the Friendship Hill National Historical Site, Pennsylvania, USA

    Science.gov (United States)

    Hammarstrom, J.M.; Sibrell, P.L.; Belkin, H.E.

    2003-01-01

    Armoring of limestone is a common cause of failure in limestone-based acid-mine drainage (AMD) treatment systems. Limestone is the least expensive material available for acid neutralization, but is not typically recommended for highly acidic, Fe-rich waters due to armoring with Fe(III) oxyhydroxide coatings. A new AMD treatment technology that uses CO2 in a pulsed limestone bed reactor minimizes armor formation and enhances limestone reaction with AMD. Limestone was characterized before and after treatment with constant flow and with the new pulsed limestone bed process using AMD from an inactive coal mine in Pennsylvania (pH = 2.9, Fe = 150 mg/l, acidity = 1000 mg/l CaCO3). In constant flow experiments, limestone is completely armored with reddish-colored ochre within 48 h of contact in a fluidized bed reactor. Effluent pH initially increased from the inflow pH of 2.9 to over 7, but then decreased to 6 during operation. Limestone removed from a pulsed bed pilot plant is a mixture of unarmored, rounded and etched limestone grains and partially armored limestone and refractory mineral grains (dolomite, pyrite). The ???30% of the residual grains in the pulsed flow reactor that are armored have thicker (50- to 100-??m), more aluminous coatings and lack the gypsum rind that develops in the constant flow experiment. Aluminium-rich zones developed in the interior parts of armor rims in both the constant flow and pulsed limestone bed experiments in response to pH changes at the solid/solution interface. ?? 2003 Elsevier Ltd. All rights reserved.

  12. Analytical approaches to optimizing system "Semiconductor converter-electric drive complex"

    Science.gov (United States)

    Kormilicin, N. V.; Zhuravlev, A. M.; Khayatov, E. S.

    2018-03-01

    In the electric drives of the machine-building industry, the problem of optimizing the drive in terms of mass-size indicators is acute. The article offers analytical methods that ensure the minimization of the mass of a multiphase semiconductor converter. In multiphase electric drives, the form of the phase current at which the best possible use of the "semiconductor converter-electric drive complex" for active materials is different from the sinusoidal form. It is shown that under certain restrictions on the phase current form, it is possible to obtain an analytical solution. In particular, if one assumes the shape of the phase current to be rectangular, the optimal shape of the control actions will depend on the width of the interpolar gap. In the general case, the proposed algorithm can be used to solve the problem under consideration by numerical methods.

  13. An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

    Science.gov (United States)

    Rohde, S.; Barnett, S. A.; Choi, C.-H.

    1989-06-01

    A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

  14. Bistable behaviour of biexciton population in a dense exciton-biexciton system in semiconductors

    International Nuclear Information System (INIS)

    Nguyen Ba An.

    1986-05-01

    The steady state bistable behaviour of biexciton population in a dense exciton-biexciton semiconductor is considered. The intrinsic optical feedback is provided by the recombination mechanism. The exciton-biexciton and biexciton-biexciton interactions play the role of non-linearity responsible for biexciton bistability to occur. The conditions leading to the effect of bistability are obtained and two-parameter phase transition diagrams are drawn for both intensity and frequency bistable phenomena. (author)

  15. Stationary Shock Waves with Oscillating Front in Dislocation Systems of Semiconductors

    Science.gov (United States)

    Gestrin, S. G.; Shchukina, E. V.

    2018-05-01

    The paper presents a study of weakly nonlinear wave processes in the cylindrical region of a hole gas surrounding a negatively charged dislocation in an n-type semiconductor crystal. It is shown that shock waves propagating along the dislocation are the solutions of the Korteweg-de Vries-Burgers equation when the dispersion and dissipation of medium are taken into account. Estimates are obtained for the basic physical parameters characterizing the shock wave and the region inside the Reed cylinder.

  16. Sentinel Gap basalt reacted in a temperature gradient

    International Nuclear Information System (INIS)

    Charles, R.W.; Bayhurst, G.K.

    1983-01-01

    Six basalt prisms were reacted in a controlled temperature gradient hydrothermal circulation system for two months. The prisms were centered at 72, 119, 161, 209, 270, and 310 0 C. Total pressure was 1/3 kbar. All prisms showed large weight loss: 5.5% to 14.9%. The matrix micropegmatite and natural nontronitic alteration reacted readily to clays at all temperatures. The first four prisms were coated with a calcium smectite, and the last two prisms were covered with discrete patches of potassium-rich phengite and alkali feldspar. The results indicated that clays may act as adsorbers of various ions

  17. Sentinel Gap basalt reacted in a temperature gradient

    International Nuclear Information System (INIS)

    Charles, R.W.; Bayhurst, G.K.

    1982-01-01

    Six basalt prisms were reacted in a controlled temperature gradient hydrothermal circulation system for two months. The prisms are centered at 72, 119, 161, 209, 270, and 310 0 C. Total pressure is 1/3 kbar. All prisms show large weight loss: 5.5% to 14.9%. The matrix micropegmatite and natural nontronitic alteration readily reacts to clays at all temperatures. The first four prisms are coated with a Ca-smectite while the last two prisms are covered with discrete patches of K rich phengite and alkali feldspar. The clays may act as adsorbers of various ions

  18. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  19. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  20. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  1. Measurements of non-reacting and reacting flow fields of a liquid swirl flame burner

    Science.gov (United States)

    Chong, Cheng Tung; Hochgreb, Simone

    2015-03-01

    The understanding of the liquid fuel spray and flow field characteristics inside a combustor is crucial for designing a fuel efficient and low emission device. Characterisation of the flow field of a model gas turbine liquid swirl burner is performed by using a 2-D particle imaging velocimetry(PIV) system. The flow field pattern of an axial flow burner with a fixed swirl intensity is compared under confined and unconfined conditions, i.e., with and without the combustor wall. The effect of temperature on the main swirling air flow is investigated under open and non-reacting conditions. The result shows that axial and radial velocities increase as a result of decreased flow density and increased flow volume. The flow field of the main swirling flow with liquid fuel spray injection is compared to non-spray swirling flow. Introduction of liquid fuel spray changes the swirl air flow field at the burner outlet, where the radial velocity components increase for both open and confined environment. Under reacting condition, the enclosure generates a corner recirculation zone that intensifies the strength of radial velocity. The reverse flow and corner recirculation zone assists in stabilizing the flame by preheating the reactants. The flow field data can be used as validation target for swirl combustion modelling.

  2. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    Science.gov (United States)

    Hansen, A. K.; Christensen, M.; Noordegraaf, D.; Heist, P.; Papastathopoulos, E.; Loyo-Maldonado, V.; Jensen, O. B.; Stock, M. L.; Skovgaard, P. M. W.

    2017-02-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction- limited, single frequency operation with output powers up to 8 W near 1120 nm. We present a 1.9 W single frequency laser system at 562 nm, based on single pass cascaded frequency doubling of such a tapered laser diode. The laser diode is a monolithic device consisting of two sections: a ridge waveguide with a distributed Bragg reflector, and a tapered amplifier. Using single-pass cascaded frequency doubling in two periodically poled lithium niobate crystals, 1.93 W of diffraction-limited light at 562 nm is generated from 5.8 W continuous-wave infrared light. When turned on from cold, the laser system reaches full power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination of high stability, compactness and watt-level power range means this technology is of great interest for a wide range of biological and biomedical applications.

  3. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  4. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  5. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  6. The Study of an Integrated Rating System for Supplier Quality Performance in the Semiconductor Industry

    Science.gov (United States)

    Lee, Yu-Cheng; Yen, Tieh-Min; Tsai, Chih-Hung

    This study provides an integrated model of Supplier Quality Performance Assesment (SQPA) activity for the semiconductor industry through introducing the ISO 9001 management framework, Importance-Performance Analysis (IPA) Supplier Quality Performance Assesment and Taguchi`s Signal-to-Noise Ratio (S/N) techniques. This integrated model provides a SQPA methodology to create value for all members under mutual cooperation and trust in the supply chain. This method helps organizations build a complete SQPA framework, linking organizational objectives and SQPA activities to optimize rating techniques to promote supplier quality improvement. The techniques used in SQPA activities are easily understood. A case involving a design house is illustrated to show our model.

  7. The role of phonon scattering in the indistinguishability of photons emitted from semiconductor cavity QED systems

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Gregersen, Niels; Mørk, Jesper

    2013-01-01

    A solid-state single-photon source emitting indistinguishable photons on-demand is an essential component of linear optics quantum computing schemes. However, the emitter will inevitably interact with the solid-state environment causing decoherence and loss of indistinguishability. In this paper......, we present a comprehensive theoretical treatment of the influence of phonon scattering on the coherence properties of single photons emitted from semiconductor quantum dots. We model decoherence using a full microscopic theory and compare with standard Markovian approximations employing Lindblad...

  8. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  9. Effects of strain on phonon interactions and phase nucleation in several semiconductor and nano particle systems

    Science.gov (United States)

    Tallman, Robert E.

    Raman scattering is utilized to explore the effects of applied pressure and strain on anharmonic phonon interactions and nucleation of structural transitions in several bulk and nanoparticle semiconductor systems. The systems investigated are bulk ZnS and ZnSe in several isotopic compositions, InP/CdS core/shell nanoparticles exhibiting confined and surface optical Raman modes, and amorphous selenium films undergoing photo-induced crystallization. The anharmonic decay of long-wavelength optical modes into two-phonon acoustic combinations modes is studied in 64Zn32S, 64Zn34S, natZnatS bulk crystals by measuring the TO(Gamma) Raman line-shape as a function of applied hydrostatic pressure. The experiments are carried out at room temperature and 16K for pressures up to 150 kbars using diamond-anvil cells. The most striking effects occur in 68Zn32S where the TO(Gamma) peak narrows by a factor of 10 and increases in intensity at pressures for which the TO(Gamma) frequency has been tuned into a gap in the two-phonon density of states (DOS). In all the isotopic compositions, the observed phonon decay processes can be adequately explained by a second order perturbation treatment of the anharmonic coupling between TO(Gamma) and TA + LA combinations at various critical points, combined with an adiabatic bond-charge model for the phonon DOS and the known mode Gruneisen parameters. Bulk ZnSe crystals exhibit very different behavior. Here we find that anharmonic decay alone can not explain the excessive (˜ 60 cm-1 ) broadening in the TO(Gamma) Raman peak observed as the pressure approaches to within 50kbar of the ZB -> B1 phase transition (at P ˜ 137 kbar). Rather the broadening appears to arise from antecedent nucleation of structural changes within nanoscopic domains, with the mechanism for line-shape changes being mode mixing via localization and disorder instead of anharmonicity. To sort out these contributions, pressure experiments on natural ZnSe and on isotopically pure

  10. Dynamical Fano-Like Interference between Rabi Oscillations and Coherent Phonons in a Semiconductor Microcavity System.

    Science.gov (United States)

    Yoshino, S; Oohata, G; Mizoguchi, K

    2015-10-09

    We report on dynamical interference between short-lived Rabi oscillations and long-lived coherent phonons in CuCl semiconductor microcavities resulting from the coupling between the two oscillations. The Fourier-transformed spectra of the time-domain signals obtained from semiconductor microcavities by using a pump-probe technique show that the intensity of the coherent longitudinal optical phonon of CuCl is enhanced by increasing that of the Rabi oscillation, which indicates that the coherent phonon is driven by the Rabi oscillation through the Fröhlich interaction. Moreover, as the Rabi oscillation frequency decreases upon crossing the phonon frequency, the spectral profile of the coherent phonon changes from a peak to a dip with an asymmetric structure. The continuous wavelet transformation reveals that these peak and dip structures originate from constructive and destructive interference between Rabi oscillations and coherent phonons, respectively. We demonstrate that the asymmetric spectral structures in relation to the frequency detuning are well reproduced by using a classical coupled oscillator model on the basis of dynamical Fano-like interference.

  11. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  12. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  13. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system

    International Nuclear Information System (INIS)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente; Alcala, Rafael

    1996-01-01

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author)

  14. Evaluation of semiconductor gas sensor system for ethanol determination during fermentation processes

    Energy Technology Data Exchange (ETDEWEB)

    Picque, D; Corrieu, G

    1988-10-01

    Using commercial gas sensitive semi-conductors, an ethanol sensor has been constructed which operates by direct immersion in fermentation media. The calibration range of 0.1 to 10 or 13 % depending on the component. However, they are very often subjected to considerable drift (in the same case up to 10 %/h of the measured value). The electrical resistance of component may vary by a factor of 1 to 5 for a well-defined ethanol concentration. The effects of temperature changes in fermentation media are easily compensated. Other volatile compounds (methanol, ammonia,...) substantially affect component responses. Thus, all work on sensors requires careful calibration. Wine fermentation processes can be monitored satisfactorily, providing the sensor is recalibrated about every six hours.

  15. An investigation into the use of large area silicon semiconductors in microwave systems

    International Nuclear Information System (INIS)

    Holliday, H.R.

    1999-09-01

    Semiconductor microwave devices are usually manufactured using micron or sub-micron geometries. The equipment needed for these techniques has a high capital cost and demands high overheads. The material traditionally processed for microwave applications is gallium arsenide but during the period of this investigation a move towards the use of silicon and silicon germanium has emerged. This study, which is essentially practical, covers a range of new ideas for components using large area silicon devices. In the course of the study considerable progress has also been made in the understanding of the behaviour of silicon at microwave frequencies, and some of the initial Concepts were shown to be invalid. An accurate determination of the dielectric constant of silicon has been made using quasi optical techniques at microwave frequencies. The fabrication techniques described originate from methods used at Q-par Angus to manufacture large area silicon nuclear radiation detectors. Developed at the University of Birmingham, these are 'wet chemistry' methods that preclude the need for diffusion or other conventional semiconductor processing techniques. Novel microwave components have been developed using these techniques. These include an optically controlled attenuator with multioctave bandwidth and good dynamic range; window devices to reduce the radar cross section of microwave antennas; and microwave cavity devices including a variable-Q cavity. Concepts for millimeter wave filters are discussed, as are areas for further research. During the attenuator study Wheeler's equations have been extended to cover truncated microstrip. It was observed at an early stage in the work that optical excitation was very effective as a method of controlling the devices. This fits well with current trends in electro-optical devices. The piezo resistance effect in silicon has been briefly investigated and a mechanical attenuator exploiting this effect has been developed. (author)

  16. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  17. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  18. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  19. Low Mach number asymptotics for reacting compressible fluid flows

    Czech Academy of Sciences Publication Activity Database

    Feireisl, Eduard; Petzeltová, Hana

    2010-01-01

    Roč. 26, č. 2 (2010), s. 455-480 ISSN 1078-0947 R&D Projects: GA ČR GA201/05/0164 Institutional research plan: CEZ:AV0Z10190503 Keywords : low Mach number * Navier-Stokes-Fourier system * reacting fluids Subject RIV: BA - General Mathematics Impact factor: 0.986, year: 2010 http://www.aimsciences.org/journals/displayArticles.jsp?paperID=4660

  20. Quantum dynamical simulation of photoinduced electron transfer processes in dye-semiconductor systems: theory and application to coumarin 343 at TiO₂.

    Science.gov (United States)

    Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael

    2015-04-10

    A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.

  1. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  2. A constitutive theory of reacting electrolyte mixtures

    Science.gov (United States)

    Costa Reis, Martina; Wang, Yongqi; Bono Maurizio Sacchi Bassi, Adalberto

    2013-11-01

    A constitutive theory of reacting electrolyte mixtures is formulated. The intermolecular interactions among the constituents of the mixture are accounted for through additional freedom degrees to each constituent of the mixture. Balance equations for polar reacting continuum mixtures are accordingly formulated and a proper set of constitutive equations is derived with basis in the Müller-Liu formulation of the second law of thermodynamics. Moreover, the non-equilibrium and equilibrium responses of the reacting mixture are investigated in detail by emphasizing the inner and reactive structures of the medium. From the balance laws and constitutive relations, the effects of molecular structure of constituents upon the fluid flow are studied. It is also demonstrated that the local thermodynamic equilibrium state can be reached without imposing that the set of independent constitutive variables is time independent, neither spatially homogeneous nor null. The resulting constitutive relations presented throughout this work are of relevance to many practical applications, such as swelling of clays, developing of bio and polymeric membranes, and use of electrorheological fluids in industrial processes. The first author acknowledges financial support from National Counsel of Technological and Scientific Development (CNPq) and German Academic Exchange Service (DAAD).

  3. SUBWAY POWER SYSTEMS WITH MODERN SEMICONDUCTOR CONVERTERS AND ENERGY STORAGE DEVICES

    Directory of Open Access Journals (Sweden)

    O.I. Kholod

    2013-02-01

    Full Text Available Five subway power systems, a traditional power system and power systems with an active rectifier and an energy storage device, are considered. Estimation of energy loss in the analyzed subway power systems circuits is made.

  4. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  5. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  6. Combining discrete equations method and upwind downwind-controlled splitting for non-reacting and reacting two-fluid computations

    International Nuclear Information System (INIS)

    Tang, K.

    2012-01-01

    When numerically investigating multiphase phenomena during severe accidents in a reactor system, characteristic lengths of the multi-fluid zone (non-reactive and reactive) are found to be much smaller than the volume of the reactor containment, which makes the direct modeling of the configuration hardly achievable. Alternatively, we propose to consider the physical multiphase mixture zone as an infinitely thin interface. Then, the reactive Riemann solver is inserted into the Reactive Discrete Equations Method (RDEM) to compute high speed combustion waves represented by discontinuous interfaces. An anti-diffusive approach is also coupled with RDEM to accurately simulate reactive interfaces. Increased robustness and efficiency when computing both multiphase interfaces and reacting flows are achieved thanks to an original upwind downwind-controlled splitting method (UDCS). UDCS is capable of accurately solving interfaces on multi-dimensional unstructured meshes, including reacting fronts for both deflagration and detonation configurations. (author)

  7. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  8. Exploiting energy transfer in hybrid metal and semiconductor nanoparticle systems for biosensing and energy harvesting

    Energy Technology Data Exchange (ETDEWEB)

    Mayilo, Sergiy

    2009-06-19

    In this work, gold and semiconductor nanoparticles are used as building blocks for nanostructures, in which energy transfer is investigated. Fluorescence quenching by gold nanoparticles is investigated and used to develop novel immunoassays for medically relevant molecules. The influence of gold nanoparticles on radiative and non-radiative rates of Cy3 and Cy3B dyes is studied here. A competitive, homogeneous immunoassay for digoxigenin and digoxin, a drug used to cure heart diseases, is developed. The assay has a limit of detection of 0.5 nM in buffer and 50 nM in serum. Time resolved spectroscopy reveals that the quenching is due to energy transfer with an efficiency of 70%. A homogeneous sandwich immunoassay for cardiac troponin T, an indicator of damage to the heart muscle, is developed. Gold nanoparticles and fluorophores are functionalized with anti-troponin T antibodies. In the presence of troponin T the nanoparticles and fluorophores form a sandwich structure, in which the dye fluorescence is quenched by a gold nanoparticle. The limit of detection of the immunoassay in buffer is 0.02 nM and 0.11 nM in serum. Energy transfer is demonstrated in clusters of CdTe nanocrystals assembled using three methods. In the first method, clusters of differently-sized water soluble CdTe nanocrystals capped by negatively charged mercaptoacid stabilizers are produced through electrostatic interactions with positively charged Ca{sup 2+} cations. The two other methods employ covalent binding through dithiols and thiolated DNA as linkers between nanocrystals. Energy transfer from smaller nanocrystals to larger nanocrystals in aggregates is demonstrated by means of steady-state and time-resolved photoluminescence spectroscopy, paving the way for nanocrystal-based light harvesting structures in solution. Multi-shell onion-like CdSe/ZnS/CdSe/ZnS nanocrystals are presented. The shade of the white light can be controlled by annealing the particles. Evidence for intra

  9. Optically Detected Magnetic Resonance Studies on π-conjugated semiconductor systems

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ying [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    Optically Detected Magnetic Resonance (ODMR) techniques were used to investigate the dynamics of excitons and charge carriers in π-conjugated organic semiconductors. Degradation behavior of the negative spin-1/2 electroluminescence-detected magnetic resonance (ELDMR) was observed in Alq3 devices. The increase in the resonance amplitude implies an increasing bipolaron formation during degradation, which might be the result of growth of charge traps in the device. The same behavior of the negative spin-1/2 ELDMR was observed in 2wt% Rubrene doped Tris(8-hydroxyquinolinato)aluminium (Alq3) devices. However, with increasing injection current, a positive spin-1/2 ELDMR, together with positive spin 1 triplet powder patterns at ΔmS=±1 and ΔmS=±2, emerges. Due to the similarities in the frequency dependences of single and double modulated ELDMR and the photoluminescence-detected magnetic resonance (PLDMR) results in poly[2-methoxy-5-(2 -ethyl-hexyloxy)-1,4-phenyl ene vinylene] (MEH-PPV) films, the mechanism for this positive spin-1/2 ELDMR was assigned to enhanced triplet-polaron quenching under resonance conditions. The ELDMR in rubrene doped Alq3 devices provides a path to investigate charge distribution in the device under operational conditions. Combining the results of several devices with different carrier blocking properties and the results from transient EL, it was concluded trions not only exist near buffer layer but also exist in the electron transport layer. This TPQ model can also be used to explain the positive spin-1/2 PLDMR in poly(3-hexylthiophene) (P3HT) films at low temperature and in MEH-PPV films at various temperatures up to room temperature. Through quantitative analysis, TE-polaron quenching (TPQ) model is shown having the ability to explain most behaviors of the positive spin-1/2 resonance. Photocurrent detected magnetic resonance (PCDMR) studies on MEH-PPV devices revealed a novel transient resonance signal. The signal

  10. Transmission line pulse system for avalanche characterization of high power semiconductor devices

    Science.gov (United States)

    Riccio, Michele; Ascione, Giovanni; De Falco, Giuseppe; Maresca, Luca; De Laurentis, Martina; Irace, Andrea; Breglio, Giovanni

    2013-05-01

    Because of the increasing in power density of electronic devices for medium and high power application, reliabilty of these devices is of great interest. Understanding the avalanche behaviour of a power device has become very important in these last years because it gives an indication of the maximum energy ratings which can be seen as an index of the device ruggedness. A good description of this behaviour is given by the static IV blocking characteristc. In order to avoid self heating, very relevant in high power devices, very short pulses of current have to be used, whose value can change from few milliamps up to tens of amps. The most used method to generate short pulses is the TLP (Transmission Line Pulse) test, which is based on charging the equivalent capacitance of a transmission line to high value of voltage and subsequently discharging it onto a load. This circuit let to obtain very short square pulses but it is mostly used for evaluate the ESD capability of semiconductor and, in this environment, it generates pulses of low amplitude which are not high enough to characterize the avalanche behaviour of high power devices . Advanced TLP circuit able to generate high current are usually very expensive and often suffer of distorption of the output pulse. In this article is proposed a simple, low cost circuit, based on a boosted-TLP configuration, which is capable to produce very square pulses of about one hundreds of nanosecond with amplitude up to some tens of amps. A prototype is implemented which can produce pulses up to 20A of amplitude with 200 ns of duration which can characterize power devices up to 1600V of breakdown voltage. Usage of microcontroller based logic make the circuit very flexible. Results of SPICE simulation are provided, together with experimental results. To prove the effectiveness of the circuit, the I-V blocking characteristics of two commercial devices, namely a 600V PowerMOS and a 1200V Trench-IGBT, are measured at different

  11. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  12. X-ray analysis of spintronic semiconductor and half metal thin film systems; Roentgenstrukturuntersuchungen an spintronischen Halbleiter- und Halbmetall-Duennschichtsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Stahl, Andreas

    2010-07-01

    In this work the structural properties of spintronic semiconductor and halfmetalic thin-film systems were investigated. The layer thicknesses and interface roughnesses of the multi-layer systems were estimated by X-ray reflectivity measurements. The fits were performed using the software Fewlay which uses the Parratt formalism to calculate the reflectivities. The relaxation of the films was analyzed by reciprocal space mapping on preferably highly indexed Bragg reflexes. (orig.)

  13. A Customized Metal Oxide Semiconductor-Based Gas Sensor Array for Onion Quality Evaluation: System Development and Characterization

    Directory of Open Access Journals (Sweden)

    Tharun Konduru

    2015-01-01

    Full Text Available A gas sensor array, consisting of seven Metal Oxide Semiconductor (MOS sensors that are sensitive to a wide range of organic volatile compounds was developed to detect rotten onions during storage. These MOS sensors were enclosed in a specially designed Teflon chamber equipped with a gas delivery system to pump volatiles from the onion samples into the chamber. The electronic circuit mainly comprised a microcontroller, non-volatile memory chip, and trickle-charge real time clock chip, serial communication chip, and parallel LCD panel. User preferences are communicated with the on-board microcontroller through a graphical user interface developed using LabVIEW. The developed gas sensor array was characterized and the discrimination potential was tested by exposing it to three different concentrations of acetone (ketone, acetonitrile (nitrile, ethyl acetate (ester, and ethanol (alcohol. The gas sensor array could differentiate the four chemicals of same concentrations and different concentrations within the chemical with significant difference. Experiment results also showed that the system was able to discriminate two concentrations (196 and 1964 ppm of methlypropyl sulfide and two concentrations (145 and 1452 ppm of 2-nonanone, two key volatile compounds emitted by rotten onions. As a proof of concept, the gas sensor array was able to achieve 89% correct classification of sour skin infected onions. The customized low-cost gas sensor array could be a useful tool to detect onion postharvest diseases in storage.

  14. High-Temperature, Wirebondless, Ultra-Compact Wide Bandgap Power Semiconductor Modules for Space Power Systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Silicon carbide (SiC) and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal management, and...

  15. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  16. A semiconductor device thermal model taking into account non-linearity and multhipathing of the cooling system

    International Nuclear Information System (INIS)

    Górecki, K; Zarȩbski, J

    2014-01-01

    The paper is devoted to modelling thermal properties of semiconductor devices at the steady state. The dc thermal model of a semiconductor device taking into account the multipath heat flow is proposed. Some results of calculations and measurements of thermal resistance of a power MOSFET operating at different cooling conditions are presented. The obtained results of calculations fit the results of measurements, which proves the correctness of the proposed model.

  17. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  18. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  19. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  20. Radon concentration and exhalation measurements with semiconductor detector and electrostatic precipitator working in a closed circulation system

    International Nuclear Information System (INIS)

    Wojcik, M.; Morawska, L.

    1982-01-01

    An apparatus is described and a method presented for the determination of concentration of radon emanated from solid and liquid samples. In this method an object or a sample of air is closed in an hermetically sealed chamber. The air contaminated by radon and its daughters is circulated in a closed system a few times through an electrostatic precipitator mounted in one housing with a semiconductor Si Li detector. The concentration of radon is determined by the alpha activity measurement of its daughters. The sensitivity of the apparatus is very high. While calculating a radon concentration from an activity measurement of RaA (fast method) the sensitivity is about 0.07 pCi/l and when measuring the activity of RaC' (slow method) it is 0.008 pCi/l. Due to the application of an electrostatic precipitator and a silicon detector it is possible to perform alpha spectrometric measurements and thus separate activities of RaA, RaC', and ThC and to calculate 222 Rn or 220 Rn concentrations. The efficiency of RaA, RaB, RaC, ThB and ThC collection is constant, due to the method involving the circulation of the air through the electrostatic precipitator several times. (author)

  1. Solid-State Neutron Multiplicity Counting System Using Commercial Off-the-Shelf Semiconductor Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Rozhdestvenskyy, S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-08-09

    This work iterates on the first demonstration of a solid-state neutron multiplicity counting system developed at Lawrence Livermore National Laboratory by using commercial off-the-shelf detectors. The system was demonstrated to determine the mass of a californium-252 neutron source within 20% error requiring only one-hour measurement time with 20 cm2 of active detector area.

  2. Semiconductor-machine system for controlling excitation of synchronous medium power generators

    Energy Technology Data Exchange (ETDEWEB)

    Vrtikapa, G

    1982-01-01

    A system for controlling excitation (ARP-29/1) is described which was developed at the ''Nikola Tesla'' institute (Czechoslavakia) for rebuilding the Zvornik hydroelectric plant with 30 MV X A units. The system corresponds to the modern level of automation and considers positive characteristics of existing equipment, it is easily included in a technological process, has small dimensions and is easily installed during overhaul of a electric generating plant, and it allows one to obtain good economic results. Two years of use have confirmed the high reliability and quality of the excitation. The excitation control system consists of synchronous motor, excitation system, automatic control of voltage, manual control of excitation unit, unit for automatic following and switching, relay automatic device with protection and warning. The excitation system of the generator has: thyristor rectifier, thyristor converter, a bridge with thyristor control unit, machine excitation generator, switch for demagnetization. The excitation system is supplied from an electric power network or from a three phase generator with permanent magnets.

  3. Materials study for reacting plasma machine

    International Nuclear Information System (INIS)

    Kamada, Kohji; Hamada, Yasuji

    1982-01-01

    A new reacting plasma machine is designed, and will be constructed at the Institute of Plasma Physics, Nagoya University. It is important to avoid the activation of the materials for the machine, accordingly, aluminum alloy has been considered as the material since the induced activity of aluminum due to 14 MeV neutrons is small. The vacuum chamber of the new machine consists of four modules, and the remote control of each module is considered. However, the cost of the remote control of modules is expensive. To minimize the dependence on the remote control, the use of aluminum alloy is considered as the first step. The low electrical resistivity, over-ageing, weak mechanical strength and eddy current characteristics of aluminum alloy must be improved. The physical and electrical properties of various aluminum alloys have been investigated. Permeability of hydrogen through aluminum, the recycling characteristics and surface coating materials have been also studied. (Kato, T.)

  4. Direct numerical simulation of turbulent reacting flows

    Energy Technology Data Exchange (ETDEWEB)

    Chen, J.H. [Sandia National Laboratories, Livermore, CA (United States)

    1993-12-01

    The development of turbulent combustion models that reflect some of the most important characteristics of turbulent reacting flows requires knowledge about the behavior of key quantities in well defined combustion regimes. In turbulent flames, the coupling between the turbulence and the chemistry is so strong in certain regimes that is is very difficult to isolate the role played by one individual phenomenon. Direct numerical simulation (DNS) is an extremely useful tool to study in detail the turbulence-chemistry interactions in certain well defined regimes. Globally, non-premixed flames are controlled by two limiting cases: the fast chemistry limit, where the turbulent fluctuations. In between these two limits, finite-rate chemical effects are important and the turbulence interacts strongly with the chemical processes. This regime is important because industrial burners operate in regimes in which, locally the flame undergoes extinction, or is at least in some nonequilibrium condition. Furthermore, these nonequilibrium conditions strongly influence the production of pollutants. To quantify the finite-rate chemistry effect, direct numerical simulations are performed to study the interaction between an initially laminar non-premixed flame and a three-dimensional field of homogeneous isotropic decaying turbulence. Emphasis is placed on the dynamics of extinction and on transient effects on the fine scale mixing process. Differential molecular diffusion among species is also examined with this approach, both for nonreacting and reacting situations. To address the problem of large-scale mixing and to examine the effects of mean shear, efforts are underway to perform large eddy simulations of round three-dimensional jets.

  5. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    Energy Technology Data Exchange (ETDEWEB)

    Schwager, Heike

    2012-07-04

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  6. Open quantum spin systems in semiconductor quantum dots and atoms in optical lattices

    International Nuclear Information System (INIS)

    Schwager, Heike

    2012-01-01

    In this Thesis, we study open quantum spin systems from different perspectives. The first part is motivated by technological challenges of quantum computation. An important building block for quantum computation and quantum communication networks is an interface between material qubits for storage and data processing and travelling photonic qubits for communication. We propose the realisation of a quantum interface between a travelling-wave light field and the nuclear spins in a quantum dot strongly coupled to a cavity. Our scheme is robust against cavity decay as it uses the decay of the cavity to achieve the coupling between nuclear spins and the travelling-wave light fields. A prerequiste for such a quantum interface is a highly polarized ensemble of nuclear spins. High polarization of the nuclear spin ensemble is moreover highly desirable as it protects the potential electron spin qubit from decoherence. Here we present the theoretical description of an experiment in which highly asymmetric dynamic nuclear spin pumping is observed in a single self-assembled InGaAs quantum dot. The second part of this Thesis is devoted to fundamental studies of dissipative spin systems. We study general one-dimensional spin chains under dissipation and propose a scheme to realize a quantum spin system using ultracold atoms in an optical lattice in which both coherent interaction and dissipation can be engineered and controlled. This system enables the study of non-equilibrium and steady state physics of open and driven spin systems. We find, that the steady state expectation values of different spin models exhibit discontinuous behaviour at degeneracy points of the Hamiltonian in the limit of weak dissipation. This effect can be used to dissipatively probe the spectrum of the Hamiltonian. We moreover study spin models under the aspect of state preparation and show that dissipation drives certain spin models into highly entangled state. Finally, we study a spin chain with

  7. Biosynthesis of fluorescent CdS nanocrystals with semiconductor properties: Comparison of microbial and plant production systems.

    Science.gov (United States)

    Al-Shalabi, Zahwa; Doran, Pauline M

    2016-04-10

    This study investigated fission yeast (Schizosaccharomyces pombe) and hairy roots of tomato (Solanum lycopersicum) as in vitro production vehicles for biological synthesis of CdS quantum dots. Cd added during the mid-growth phase of the cultures was detoxified within the biomass into inorganic sulphide-containing complexes with the quantum confinement properties of semiconductor nanocrystals. Significant differences were found between the two host systems in terms of nanoparticle production kinetics, yield and quality. The much slower growth rate of hairy roots compared with yeast is a disadvantage for commercial scaled-up production. Nanoparticle extraction from the biomass was less effective for the roots: 19% of the Cd present in the hairy roots was recovered after extraction compared with 34% for the yeast. The overall yield of CdS quantum dots was also lower for the roots: relative to the amount of Cd taken up into the biomass, 8.5% was recovered in yeast gel filtration fractions exhibiting quantum dot properties whereas the result for hairy roots was only 0.99%. Yeast-produced CdS crystallites were somewhat smaller with diameters of approximately 2-6 nm compared with those of 4-10nm obtained from the roots. The average ratio of inorganic sulphide to Cd for the purified and size-fractionated particles was 0.44 for the yeast and 1.6 for the hairy roots. Despite the limitations associated with hairy roots in terms of culture kinetics and product yield, this system produced CdS nanoparticles with enhanced photostability and 3.7-13-fold higher fluorescence quantum efficiency compared with those generated by yeast. This work demonstrates that the choice of cellular host can have a significant effect on nanoparticle functional properties as well as on the bioprocessing aspects of biological quantum dot synthesis. Copyright © 2016 Elsevier B.V. All rights reserved.

  8. Control method and system for use when growing thin-films on semiconductor-based materials

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    2001-01-01

    A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

  9. Flight demonstration of flight termination system and solid rocket motor ignition using semiconductor laser initiated ordnance

    Science.gov (United States)

    Schulze, Norman R.; Maxfield, B.; Boucher, C.

    1995-01-01

    Solid State Laser Initiated Ordnance (LIO) offers new technology having potential for enhanced safety, reduced costs, and improved operational efficiency. Concerns over the absence of programmatic applications of the technology, which has prevented acceptance by flight programs, should be abated since LIO has now been operationally implemented by the Laser Initiated Ordnance Sounding Rocket Demonstration (LOSRD) Program. The first launch of solid state laser diode LIO at the NASA Wallops Flight Facility (WFF) occurred on March 15, 1995 with all mission objectives accomplished. This project, Phase 3 of a series of three NASA Headquarters LIO demonstration initiatives, accomplished its objective by the flight of a dedicated, all-LIO sounding rocket mission using a two-stage Nike-Orion launch vehicle. LIO flight hardware, made by The Ensign-Bickford Company under NASA's first Cooperative Agreement with Profit Making Organizations, safely initiated three demanding pyrotechnic sequence events, namely, solid rocket motor ignition from the ground and in flight, and flight termination, i.e., as a Flight Termination System (FTS). A flight LIO system was designed, built, tested, and flown to support the objectives of quickly and inexpensively putting LIO through ground and flight operational paces. The hardware was fully qualified for this mission, including component testing as well as a full-scale system test. The launch accomplished all mission objectives in less than 11 months from proposal receipt. This paper concentrates on accomplishments of the ordnance aspects of the program and on the program's implementation and results. While this program does not generically qualify LIO for all applications, it demonstrated the safety, technical, and operational feasibility of those two most demanding applications, using an all solid state safe and arm system in critical flight applications.

  10. Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

    Science.gov (United States)

    Nakazato, Kazuo

    2014-03-28

    By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

  11. 1.9 W yellow, CW, high-brightness light from a high efficiency semiconductor laser-based system

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

    2017-01-01

    Semiconductor lasers are ideal sources for efficient electrical-to-optical power conversion and for many applications where their small size and potential for low cost are required to meet market demands. Yellow lasers find use in a variety of bio-related applications, such as photocoagulation......, imaging, flow cytometry, and cancer treatment. However, direct generation of yellow light from semiconductors with sufficient beam quality and power has so far eluded researchers. Meanwhile, tapered semiconductor lasers at near-infrared wavelengths have recently become able to provide neardiffraction...... power in just 60 seconds. An advantage of using a single pass configuration, rather than an external cavity configuration, is increased stability towards external perturbations. For example, stability to fluctuating case temperature over a 30 K temperature span has been demonstrated. The combination...

  12. Study on flow characteristics of chemically reacting liquid jet

    International Nuclear Information System (INIS)

    Hong Seon Dae; Okamoto, Koji; Takata, Takashi; Yamaguchi, Akira

    2004-07-01

    Tube rupture accidents in steam generators of sodium-cooled fast breeder reactors are important for safety because the rupture may propagates to neighboring tubes due to sodium-water reaction. In order to clarify the thermal-hydraulic phenomena in the accidents, the flow pattern and the interface in multi-phase flow must be investigated. The JNC cooperative research scheme on the nuclear fuel cycle with the University of Tokyo has been carried to develop a simultaneous measurement system of concentration and velocity profiles and to evaluate influence of chemical reaction on mixing phenomena. In the experiments, aqueous liquor of acetic acid and ammonium hydroxide are selected as a simulant fluid instead of liquid sodium and water vapor. The following conclusions are obtained in this research. Laser Induced Fluorescence (LIF) technique was adopted to measure reacting zone and pH distribution in chemically reacting liquid round free jet. As a result, it was found that the chemical reaction, which took place at the interface between the jet and outer flow, suppressed the mixing phenomenon (in 2001 research). Dynamic Particle Image Velocimetry (PIV) method was developed to measure instantaneous velocity profile with high temporal resolution. In the Dynamic PIV, a high-speed video camera coupled with a high-speed laser pulse generator was implemented. A time-line trend of interfacial area in the free jet was investigated with the Dynamic PIV. This technique was also applied to a complicated geometry (in 2002 research). A new algorithms for image analysis was developed to evaluated the Dynamic PIV data in detail. The characteristics of the mixing phenomenon with reacting jet such as the turbulent kinetic energy and the Reynolds stress were estimated in a spatial and temporal spectrum (in 2003 research). (author)

  13. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  14. Organic-inorganic semiconductor hybrid systems. Structure, morphology, and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    El Helou, Mira

    2012-08-22

    This dissertation addresses the preparation and characterization of hybrid semiconducting systems combining organic with inorganic materials. Characterization methods used included to determine the structure, morphology, and thermal stability comprised X-ray diffraction (XRD), atomic force microscopy (AFM), thermal desorption spectroscopy (TDS), and X-ray photoelectron spectroscopy (XPS). One organic-inorganic semiconducting system was pentacene (C{sub 22}H{sub 14}) and zinc oxide. This interface was investigated in detail for pentacene on an oxygen-terminated zinc oxide surface, i.e. ZnO(000 anti 1). An extended study on the promising p-n junction was carried out for pentacene on ZnO with different orientations which exhibit different chemical and structural characteristics: ZnO(000 anti 1), ZnO(0001), and ZnO(10 anti 10). Moreover, the organic crystal structure of pentacene was selectively tuned by carefully choosing the substrate temperature. This defined interface with a physisorbed pentacene layer on ZnO was characterized by optical absorption which depends on the temperature of the measured system, the pentacene film thickness, and the molecular orientation and packing. The high quality of the pentacene films allowed in one case to characterize the Davydov splitting by linear polarized light focused on a single crystallite. Another subject in the field of organic-inorganic hybrid materials comprised conjugated dithiols used as self-assembled monolayers (SAMs) for immobilizing semiconducting CdS nanoparticles (NPs) on Au substrates. It was demonstrated that an appropriate selection and preparation of the conjugated SAMs is crucial for building up a light-addressable potentiometric sensor with a sufficient efficiency. An optimized electron transfer was achieved with SAMs of long range ordering, high stability, and adequate conductivity. This was examined for different linkers and was best for stilbenedithiol immobilized in solution at higher temperatures. Due

  15. Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications

    Energy Technology Data Exchange (ETDEWEB)

    Mu, Yifei, E-mail: Y.Mu@student.liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Zhao, Ce Zhou, E-mail: cezhou.zhao@xjtlu.edu.cn [Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123 (China); Qi, Yanfei, E-mail: yanfei.qi01@xjtlu.edu.cn [Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123 (China); Lam, Sang, E-mail: s.lam@xjtlu.edu.cn [Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123 (China); Zhao, Chun, E-mail: garyzhao@ust.hk [Nano and Advanced Materials Institute, Hong Kong University of Science and Technology, Kowloon (Hong Kong); Lu, Qifeng, E-mail: qifeng@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Cai, Yutao, E-mail: yutao.cai@xjtlu.edu.cn [Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123 (China); Mitrovic, Ivona Z., E-mail: ivona@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Taylor, Stephen, E-mail: s.taylor@liverpool.ac.uk [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Chalker, Paul R., E-mail: pchalker@liverpool.ac.uk [Center for Materials and Structures, School of Engineering, University of Liverpool, Liverpool L69 3GH (United Kingdom)

    2016-04-01

    The construction of a turnkey real-time and on-site radiation response testing system for semiconductor devices is reported. Components of an on-site radiation response probe station, which contains a 1.11 GBq Cs{sup 137} gamma (γ)-ray source, and equipment of a real-time measurement system are described in detail for the construction of the whole system. The real-time measurement system includes a conventional capacitance–voltage (C–V) and stress module, a pulse C–V and stress module, a conventional current–voltage (I–V) and stress module, a pulse I–V and stress module, a DC on-the-fly (OTF) module and a pulse OTF module. Electrical characteristics of MOS capacitors or MOSFET devices are measured by each module integrated in the probe station under continuous γ-ray exposure and the measurement results are presented. The dose rates of different gate dielectrics are calculated by a novel calculation model based on the Cs{sup 137} γ-ray source placed in the probe station. For the sake of operators’ safety, an equivalent dose rate of 70 nSv/h at a given operation distance is indicated by a dose attenuation model in the experimental environment. HfO{sub 2} thin films formed by atomic layer deposition are employed to investigate the radiation response of the high-κ material by using the conventional C–V and pulse C–V modules. The irradiation exposure of the sample is carried out with a dose rate of 0.175 rad/s and ±1 V bias in the radiation response testing system. Analysis of flat-band voltage shifts (ΔV{sub FB}) of the MOS capacitors suggests that the on-site and real-time/pulse measurements detect more serious degradation of the HfO{sub 2} thin films compared with the off-site irradiation and conventional measurement techniques.

  16. Phase-dependent optical bistability and multistability in a semiconductor quantum well system

    International Nuclear Information System (INIS)

    Wang Zhiping; Fan Hongyi

    2010-01-01

    We theoretically investigate the hybrid absorptive-dispersive optical bistability and multistability in a four-level inverted-Y quantum well system inside a unidirectional ring cavity. We find that the coupling field, the pumping field as well as the cycling field can affect the optical bistability and multistability dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. The effects of the relative phase and the electronic cooperation parameter on the OB and OM are also studied. Our study is much more practical than its atomic counterpart due to its flexible design and the wide adjustable parameters. Thus, it may provide some new possibilities for technological applications in optoelectronics and solid-state quantum information science.

  17. A New In Vivo Model System to Assess the Toxicity of Semiconductor Nanocrystals

    Directory of Open Access Journals (Sweden)

    Angela Tino

    2011-01-01

    Full Text Available In the emerging area of nanotechnology, a key issue is related to the potential impacts of the novel nanomaterials on the environment and human health, so that this technology can be used with minimal risk. Specifically designed to combine on a single structure multipurpose tags and properties, smart nanomaterials need a comprehensive characterization of both chemicophysical properties and adequate toxicological evaluation, which is a challenging endeavour; the in vitro toxicity assays that are often employed for nanotoxicity assessments do not accurately predict in vivo response. To overcome these limitations and to evaluate toxicity characteristics of cadmium telluride quantum dots in relation to surface coatings, we have employed the freshwater polyp Hydra vulgaris as a model system. We assessed in vivo acute and sublethal toxicity by scoring for alteration of morphological traits, population growth rates, and influence on the regenerative capabilities providing new investigation clues for nanotoxicology purposes.

  18. Optimal operating conditions for external cavity semiconductor laser optical chaos communication system

    International Nuclear Information System (INIS)

    Priyadarshi, S; Pierce, I; Hong, Y; Shore, K A

    2012-01-01

    In optical chaos communications a message is masked in the noise-like broadband output of a chaotic transmitter laser, and message recovery is enabled through the synchronization of the transmitter and the (chaotic) receiver laser. Key issues are to identify the laser operating conditions which provide the highest quality synchronization conditions and those which provide optimized message extraction. In general such operating conditions are not coincident. In this paper numerical simulations are performed with the aim of identifying a regime of operation where the highest quality synchronization and optimizing message extraction efficiency are achieved simultaneously. Use of such an operating regime will facilitate practical deployment of optical chaos communications systems without the need for re-adjustment of laser operating conditions in the field. (paper)

  19. Non-equilibrium correlations and entanglement in a semiconductor hybrid circuit-QED system

    International Nuclear Information System (INIS)

    Contreras-Pulido, L D; Emary, C; Brandes, T; Aguado, Ramón

    2013-01-01

    We present a theoretical study of a hybrid circuit-quantum electrodynamics system composed of two semiconducting charge-qubits confined in a microwave resonator. The qubits are defined in terms of the charge states of two spatially separated double quantum dots (DQDs) which are coupled to the same photon mode in the microwave resonator. We analyse a transport setup where each DQD is attached to electronic reservoirs and biased out-of-equilibrium by a large voltage, and study how electron transport across each DQD is modified by the coupling to the common resonator. In particular, we show that the inelastic current through each DQD reflects an indirect qubit–qubit interaction mediated by off-resonant photons in the microwave resonator. As a result of this interaction, both charge qubits stay entangled in the steady (dissipative) state. Finite shot noise cross-correlations between currents across distant DQDs are another manifestation of this nontrivial steady-state entanglement. (paper)

  20. Semiconductor Lasers Stability, Instability and Chaos

    CERN Document Server

    Ohtsubo, Junji

    2008-01-01

    This monograph describes fascinating recent progress in the field of chaos, stability and instability of semiconductor lasers. Applications and future prospects are discussed in detail. The book emphasizes the various dynamics induced in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Recent results of both theoretical and experimental investigations are presented. Demonstrating applications of semiconductor laser chaos, control and noise, Semiconductor Lasers describes suppression and chaotic secure communications. For those who are interested in optics but not familiar with nonlinear systems, a brief introduction to chaos analysis is presented.

  1. Photoinduced charge separation in a colloidal system of exfoliated layered semiconductor controlled by coexisting aluminosilicate clay.

    Science.gov (United States)

    Nakato, Teruyuki; Yamada, Yoshimi; Miyamoto, Nobuyoshi

    2009-02-05

    We investigated photoinduced charge separation occurring in a multicomponent colloidal system composed of oxide nanosheets of photocatalytically active niobate and photochemically inert clay and electron accepting methylviologen dications (MV2+). The inorganic nanosheets were obtained by exfoliation of layered hexaniobate and hectorite clay. The niobate and clay nanosheets were spatially separated in the colloidally dispersed state, and the MV2+ molecules were selectively adsorbed on the clay platelets. UV irradiation of the colloids led to electron transfer from the niobate nanosheets to the MV2+ molecules adsorbed on clay. The photoinduced electron transfer produced methylviologen radical cations (MV*+), which was characterized by high yield and long lifetime. The yield and stability of the MV*+ species were found to depend strongly on the clay content of the colloid: from a few mol % to approximately 70 mol % of the yield and several tens of minutes to more than 40 h of the lifetime. The contents of the niobate nanosheets and MV2+ molecules and the aging of the colloid also affected the photoinduced charge separation. In the absence of MV2+ molecules in the colloid, UV irradiation induced electron accumulation in the niobate nanosheets. The stability of the electron-accumulated state also depended on the clay content. The variation in the photochemical behavior is discussed in relation to the viscosity of the colloid.

  2. Characterization of Hydrogen Complex Formation in III-V Semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Williams, Michael D

    2006-09-28

    Atomic hydrogen has been found to react with some impurity species in semiconductors. Hydrogenation is a methodology for the introduction of atomic hydrogen into the semiconductor for the express purpose of forming complexes within the material. Efforts to develop hydrogenation as an isolation technique for AlGaAs and Si based devices failed to demonstrate its commercial viability. This was due in large measure to the low activation energies of the formed complexes. Recent studies of dopant passivation in long wavelength (0.98 - 1.55m) materials suggested that for the appropriate choice of dopants much higher activation energies can be obtained. This effort studied the formation of these complexes in InP, This material is extensively used in optoelectronics, i.e., lasers, modulators and detectors. The experimental techniques were general to the extent that the results can be applied to other areas such as sensor technology, photovoltaics and to other material systems. The activation energies for the complexes have been determined and are reported in the scientific literature. The hydrogenation process has been shown by us to have a profound effect on the electronic structure of the materials and was thoroughly investigated. The information obtained will be useful in assessing the long term reliability of device structures fabricated using this phenomenon and in determining new device functionalities.

  3. Switching waves dynamics in optical bistable cavity-free system at femtosecond laser pulse propagation in semiconductor under light diffraction

    Science.gov (United States)

    Trofimov, Vyacheslav A.; Egorenkov, Vladimir A.; Loginova, Maria M.

    2018-02-01

    We consider a propagation of laser pulse in a semiconductor under the conditions of an occurrence of optical bistability, which appears due to a nonlinear absorption of the semiconductor. As a result, the domains of high concentration of free charged particles (electrons and ionized donors) occur if an intensity of the incident optical pulse is greater than certain intensity. As it is well-known, that an optical beam must undergo a diffraction on (or reflection from) the domains boundaries. Usually, the beam diffraction along a coordinate of the optical pulse propagation does not take into account by using the slowly varying envelope approximation for the laser pulse interaction with optical bistable element. Therefore, a reflection of the beam from the domains with abrupt boundary does not take into account under computer simulation of the laser pulse propagation. However, the optical beams, reflected from nonhomogeneities caused by the domains of high concentration of free-charged particles, can essentially influence on a formation of switching waves in a semiconductor. We illustrate this statement by computer simulation results provided on the base of nonlinear Schrödinger equation and a set of PDEs, which describe an evolution of the semiconductor characteristics (concentrations of free-charged particles and potential of an electric field strength), and taking into account the longitudinal and transverse diffraction effects.

  4. Redox properties of small semiconductor particles

    International Nuclear Information System (INIS)

    Liver, N.; Nitzan, A.

    1992-01-01

    The size dependence of electrical and thermodynamic quantities of intermediate-sized semiconductor particles in an electrolyte solution with a given redox pair are studied. The equilibrium constant for this system is then derived based on the relationship of the electrolytic redox components to the size, charges, and concentration of the semiconductor particles. 25 refs., 9 figs., 1 tab

  5. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  6. Optimal stretching in the reacting wake of a bluff body.

    Science.gov (United States)

    Wang, Jinge; Tithof, Jeffrey; Nevins, Thomas D; Colón, Rony O; Kelley, Douglas H

    2017-12-01

    We experimentally study spreading of the Belousov-Zhabotinsky reaction behind a bluff body in a laminar flow. Locations of reacted regions (i.e., regions with high product concentration) correlate with a moderate range of Lagrangian stretching and that range is close to the range of optimal stretching previously observed in topologically different flows [T. D. Nevins and D. H. Kelley, Phys. Rev. Lett. 117, 164502 (2016)]. The previous work found optimal stretching in a closed, vortex dominated flow, but this article uses an open flow and only a small area of appreciable vorticity. We hypothesize that optimal stretching is common in advection-reaction-diffusion systems with an excitation threshold, including excitable and bistable systems, and that the optimal range depends on reaction chemistry and not on flow shape or characteristic speed. Our results may also give insight into plankton blooms behind islands in ocean currents.

  7. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  8. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  9. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  10. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  11. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  12. Injection of spin-polarized current into semiconductor

    International Nuclear Information System (INIS)

    Vedyayev, A.V.; Dieny, B.; Ryzhanova, N.V.; Zhukov, I.V.; Zhuravlev, M.Ye.; Lutz, H.O.

    2003-01-01

    A quantum-statistical theory of injection of spin-polarized current into a semiconductor in ferromagnet/tunnel barrier/semiconductor system is presented. The presence of Schottky barrier in the semiconductor is taken into account. The case of degenerated and non-degenerated semiconductors are considered. Both the diffusive and ballistic transport regime are investigated. The dependence of current polarization on barrier thickness and temperature is calculated

  13. Computation of turbulent reacting flow in a solid-propellant ducted rocket

    Science.gov (United States)

    Chao, Yei-Chin; Chou, Wen-Fuh; Liu, Sheng-Shyang

    1995-05-01

    A mathematical model for computation of turbulent reacting flows is developed under general curvilinear coordinate systems. An adaptive, streamline grid system is generated to deal with the complex flow structures in a multiple-inlet solid-propellant ducted rocket (SDR) combustor. General tensor representations of the k-epsilon and algebraic stress (ASM) turbulence models are derived in terms of contravariant velocity components, and modification caused by the effects of compressible turbulence is also included in the modeling. The clipped Gaussian probability density function is incorporated in the combustion model to account for fluctuations of properties. Validation of the above modeling is first examined by studying mixing and reacting characteristics in a confined coaxial-jet problem. This is followed by study of nonreacting and reacting SDR combustor flows. The results show that Gibson and Launder's ASM incorporated with Sarkar's modification for compressible turbulence effects based on the general curvilinear coordinate systems yields the most satisfactory prediction for this complicated SDR flowfield.

  14. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  15. Manipulating semiconductor colloidal stability through doping.

    Science.gov (United States)

    Fleharty, Mark E; van Swol, Frank; Petsev, Dimiter N

    2014-10-10

    The interface between a doped semiconductor material and electrolyte solution is of considerable fundamental interest, and is relevant to systems of practical importance. Both adjacent domains contain mobile charges, which respond to potential variations. This is exploited to design electronic and optoelectronic sensors, and other enabling semiconductor colloidal materials. We show that the charge mobility in both phases leads to a new type of interaction between semiconductor colloids suspended in aqueous electrolyte solutions. This interaction is due to the electrostatic response of the semiconductor interior to disturbances in the external field upon the approach of two particles. The electrostatic repulsion between two charged colloids is reduced from the one governed by the charged groups present at the particles surfaces. This type of interaction is unique to semiconductor particles and may have a substantial effect on the suspension dynamics and stability.

  16. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  17. Will Future Measurement Needs of the Semiconductor Industry Be Met?

    Science.gov (United States)

    Bennett, Herbert S

    2007-01-01

    We discuss the ability of the nation's measurement system to meet future metrology needs of the semiconductor industry. Lacking an acceptable metric for assessing the health of metrology for the semiconductor industry, we identify a limited set of unmet measurement needs. Assuming that this set of needs may serve as proxy for the galaxy of semiconductor measurement needs, we examine it from the perspective of what will be required to continue the semiconductor industry's powerful impact in the world's macro-economy and maintain its exceptional record of numerous technological innovations. This paper concludes with suggestions about ways to strengthen the measurement system for the semiconductor industry.

  18. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  19. Study of transport and micro-structural properties of magnesium di-boride strand under react and bend mode and bend and react mode

    International Nuclear Information System (INIS)

    Kundu, Ananya; Das, Subrat Kumar; Bano, Anees; Pradhan, Subrata

    2015-01-01

    I-V characterization of commercial multi-filamentary Magnesium Di-Boride (MgB 2 ) wire of diameter 0.83 mm were studied in cryocooler based self-field characterization system under both react and bent mode and bent and react mode for a range of temperature 6 K - 25 K. This study is of practical technical relevance where the heat treatment of the superconducting wire makes the sample less flexible for winding in magnet and in other applications. There are limited reported data, available on degradation of MgB 2 wire with bending induced strain in react and wind and wind and react method. In the present work the bending diameter were varied from 80 mm to 20 mm in the interval of 10 mm change of bending diameter and for each case critical current (Ic) of the strand is measured for the above range of temperature. An ETP copper made customized sample holder for mounting the MgB 2 strand was fabricated and is thermally anchored to the cooling stage of the cryocooler. It is seen from the experimental data that in react and bent mode the critical current degrades from 105 A to 87 A corresponding to bending diameter of 80 mm and 20 mm respectively. The corresponding bending strain was analytically estimated and compared with the simulation result. It is also observed that in react and bent mode, the degradation of the transport property of the strand is less as compared to react and bent mode. For bent and react mode in the same sample, the critical current (Ic) was measured to be ∼145 A at 15 K for bending diameter of 20 mm. Apart from studying the bending induced strain on MgB 2 strand, the tensile test of the strand at RT was carried out. The electrical characterizations of the samples were accompanied by the microstructure analyses of the bent strand to examine the bending induced degradation in the grain structure of the strand. All these experimental findings are expected to be used as input to fabricate prototype MgB 2 based magnet. (author)

  20. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  1. Semiconductor-metal transition in CaMO3-CaTiO2 (M-Ru,Ir) systems

    International Nuclear Information System (INIS)

    Lazarev, V.B.; Shaplygin, I.S.

    1982-01-01

    Properties of CaRusub(x)Tisub(1-x)Osub(3) and CaIsub(2x)Tisub(1-x)Osub(3) solid solutions were studied in the whole range of concentrations by the methods of X-ray diffraction, electric conductivity and magnetic susceptibility. It was ascertained that the transition of semiconductor-metal type proceeded in the both families of solid solutions at x approximately 0.77 and 0.85 respectively and was accompanied by the change of structural type of solid solutions

  2. Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders

    Directory of Open Access Journals (Sweden)

    Fumihiko Tamura

    2002-06-01

    Full Text Available We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm.

  3. Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Tzu-Shun [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Lee, Ching-Ting, E-mail: ctlee@ee.ncku.edu.tw [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China); Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, 701 Tainan, Taiwan, ROC (China)

    2015-11-01

    Highlights: • The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors. • The resulting homostructured ZnO-based MOSFETs operated at a reverse voltage of −6 V had a very low gate leakage current of 24 nA. • The associated I{sub DSS} and the g{sub m(max)} were 5.64 mA/mm and 1.31 mS/mm, respectively. - Abstract: The vapor cooling condensation system was designed and used to deposit homostructured ZnO-based metal-oxide-semiconductor field-effect transistors (MOSFETs) on sapphire substrates. Owing to the high quality of the deposited, various ZnO films and interfaces, the resulting MOSFETs manifested attractive characteristics, such as the low gate leakage current of 24 nA, the low average interface state density of 2.92 × 10{sup 11} cm{sup −2} eV{sup −1}, and the complete pinch-off performance. The saturation drain–source current, the maximum transconductance, and the gate voltage swing of the resulting homostructured ZnO-based MOSFETs were 5.64 mA/mm, 1.31 mS/mm, and 3.2 V, respectively.

  4. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  5. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  6. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  7. Motivation, procedures and aims of reacting plasma experiments

    International Nuclear Information System (INIS)

    Miyahara, Akira

    1982-01-01

    A project of reacting plasma experiment (R-project) was proposed at the Institute of Plasma Physics (IPP), Nagoya University. It is necessary to bridge plasma physics and fusion engineering by means of a messenger wire like burning plasma experiment. This is a motivation of the R-project. The university linkage organization of Japan for fusion engineering category carried out a lot of contribution to R-tokamak design. The project consists of four items, namely, R-tokamak design, research and development (R and D), site and facilities, and international collaboration. The phase 1 experiment (R 1 - phase) corresponds to burning plasma experiment without D + T fuel, while the phase-2 experiment (R 2 -phase) with D + T fuel. One reference design was finished. Intensive efforts have been carried out by the R and D team on the following items, wall material, vacuum system, tritium system, neutronics, remote control system, pulsed superconducting magnet development, negative ion source, and alpha-particle diagnostics. The problems concerning site and major facilities are also important, because tritium handling, neutron and gamma-ray sky shines and the activation of devices cause impact to surrounding area. The aims of burning plasma experiment are to enter tritium into the fusion device, and to study burning plasma physics. (Kato, T.)

  8. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  9. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  10. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  11. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  12. Experimental studies on the nonlinear dynamics of ferroelectric thin films and layered ferroelectricum/semiconductor structures in oscillating systems

    International Nuclear Information System (INIS)

    Barz, Kay

    2010-01-01

    In this work experimental techniques for characterization of ferroelectric nm-thin films and ferroelectric/semiconductor structures by means of nonlinear phenomena are discussed. The thin film sample is applied in a series resonant circuit. By recording time series data and amplitude-frequency-characteristics (resonance frequency shift), the nonlinear behavior can be analyzed with respect to the theoretical aspects of these effects in the framework of nonlinear dynamics. The evolving ferroelectric hysteresis is represented by the amplitude-frequency-characteristic in a very detailed form. Interpretations are presented on how transient alterations like fatigue or retention loss, affect the amplitude-frequency-characteristics. Time series analysis allows to separate the specific influence of the nonlinear components and their corresponding time constants. The work closes with suggestions for a systematic application of the presented techniques for an extended characterization of ferroelectric thin films. (orig.)

  13. Piezo activated mode tracking system for widely tunable mode-hop-free external cavity mid-IR semiconductor lasers

    Science.gov (United States)

    Wysocki, Gerard (Inventor); Tittel, Frank K. (Inventor); Curl, Robert F. (Inventor)

    2010-01-01

    A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

  14. Simultaneous Temperature and Velocity Diagnostic for Reacting Flows, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A diagnostic technique is proposed for measuring temperature and velocity simultaneously in a high temperature reacting flow for aiding research in propulsion. The...

  15. Continuum-Kinetic Hybrid Framework for Chemically Reacting Flows

    Data.gov (United States)

    National Aeronautics and Space Administration — Predictive modeling of chemically reacting flows is essential for the design and optimization of future hypersonic vehicles. During atmospheric re-entry, complex...

  16. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  17. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  18. Reaction Ensemble Molecular Dynamics: Direct Simulation of the Dynamic Equilibrium Properties of Chemically Reacting Mixtures

    Czech Academy of Sciences Publication Activity Database

    Brennan, J.K.; Lísal, Martin; Gubbins, K.E.; Rice, B.M.

    2004-01-01

    Roč. 70, č. 6 (2004), 0611031-0611034 ISSN 1063-651X R&D Projects: GA ČR GA203/03/1588 Grant - others:NSF(US) CTS-0211792 Institutional research plan: CEZ:AV0Z4072921 Keywords : reacting systems * simulation * molecular dynamics Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.352, year: 2004

  19. Transversal light forces in semiconductors

    CERN Document Server

    Lindberg, M

    2003-01-01

    The transversal light force is a well established effect in atomic and molecular systems that are exposed to spatially inhomogeneous light fields. In this paper it is shown theoretically that in an excited semiconductor, containing an electron-hole plasma or excitons, a similar light force exists, if the semiconductor is exposed to an ultrashort spatially inhomogeneous light field. The analysis is based on the equations of motion for the Wigner distribution functions of charge carrier populations and interband polarizations. The results show that, while the light force on the electron-hole plasma or the excitons does exist, its effects on the kinetic behaviour of the electron-hole plasma or the excitons are different compared to the situation in an atomic or molecular system. A detailed analysis presented here traces this difference back to the principal differences between atoms and molecules on the one hand and electron-hole plasmas or excitons on the other hand.

  20. Semiconductor-to-metallic flipping in a ZnFe2O4–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

    International Nuclear Information System (INIS)

    Ameer, Shahid; Gul, Iftikhar Hussain; Mahmood, Nasir; Mujahid, Muhammad

    2015-01-01

    Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior

  1. Gain and Index Dynamics in Semiconductor Lasers

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    Semiconductor optical amplifiers (SOAs) provide ultrafast, i.e. broadband components for optical communication systems. They enter not only as signal generators and amplifiers, but also as nonlinear elements for ultrafast signal processing such as wavelength conversion, switching, and regeneration...... changed character from bulk semiconductor to quantum wells and most recently to quantum dots. By quantum confinement of the carriers, the light-matter interactions can be significantly modified and the optical properties, including dynamics, can be engineered to match the required functionalities...

  2. Energy resolution and throughput of a new real time digital pulse processing system for x-ray and gamma ray semiconductor detectors

    International Nuclear Information System (INIS)

    Abbene, L; Gerardi, G; Raso, G; Brai, M; Principato, F; Basile, S

    2013-01-01

    New generation spectroscopy systems have advanced towards digital pulse processing (DPP) approaches. DPP systems, based on direct digitizing and processing of detector signals, have recently been favoured over analog pulse processing electronics, ensuring higher flexibility, stability, lower dead time, higher throughput and better spectroscopic performance. In this work, we present the performance of a new real time DPP system for X-ray and gamma ray semiconductor detectors. The system is based on a commercial digitizer equipped with a custom DPP firmware, developed by our group, for on-line pulse shape and height analysis. X-ray and gamma ray spectra measurements with cadmium telluride (CdTe) and germanium (Ge) detectors, coupled to resistive-feedback preamplifiers, highlight the excellent performance of the system both at low and high rate environments (up to 800 kcps). A comparison with a conventional analog electronics showed the better high-rate capabilities of the digital approach, in terms of energy resolution and throughput. These results make the proposed DPP system a very attractive tool for both laboratory research and for the development of advanced detection systems for high-rate-resolution spectroscopic imaging, recently proposed in diagnostic medicine, industrial imaging and security screening

  3. A Wide-Range Tunable Level-Keeper Using Vertical Metal-Oxide-Semiconductor Field-Effect Transistors for Current-Reuse Systems

    Science.gov (United States)

    Tanoi, Satoru; Endoh, Tetsuo

    2012-04-01

    A wide-range tunable level-keeper using vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed for current-reuse analog systems. The design keys for widening tunable range of the operation are a two-path feed-back and a vertical MOSFET with back-bias-effect free. The proposed circuit with the vertical MOSFETs shows the 1.23-V tunable-range of the input level with the 2.4-V internal-supply voltage (VDD) in the simulation. This tunable-range of the proposed circuit is 4.7 times wider than that of the conventional. The achieved current efficiency of the proposed level-keeper is 66% at the 1.2-V output with the 2.4-V VDD. This efficiency of the proposed circuit is twice higher than that of the traditional voltage down converter.

  4. Compensation of nonlinearity in a fiber-optic transmission system using frequency-degenerate phase conjugation through counter-propagating dual pump FWM in a semiconductor optical amplifier

    Science.gov (United States)

    Anchal, Abhishek; K, Pradeep Kumar; O'Duill, Sean; Anandarajah, Prince M.; Landais, Pascal

    2018-04-01

    We present a scheme of frequency-degenerate mid-span spectral inversion (MSSI) for nonlinearity compensation in fiber-optic transmission systems. The spectral inversion is obtained by using counter-propagating dual pump four-wave mixing in a semiconductor optical amplifier (SOA). Frequency-degeneracy between signal and conjugate is achieved by keeping two pump frequencies symmetrical about the signal frequency. We simulate the performance of MSSI for nonlinearity compensation by scrutinizing the improvement of the Q-factor of a 200 Gbps QPSK signal transmitted over a standard single mode fiber, as a function of launch power for different span lengths and number of spans. We demonstrate a 7.5 dB improvement in the input power dynamic range and an almost 83% increase in the transmission length for optimum MSSI parameters of -2 dBm pump power and 400 mA SOA current.

  5. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  6. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  7. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  8. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  9. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  10. Carrier concentration induced ferromagnetism in semiconductors

    International Nuclear Information System (INIS)

    Story, T.

    2007-01-01

    In semiconductor spintronics the key materials issue concerns ferromagnetic semiconductors that would, in particular, permit an integration (in a single multilayer heterostructure) of standard electronic functions of semiconductors with magnetic memory function. Although classical semiconductor materials, such as Si or GaAs, are nonmagnetic, upon substitutional incorporation of magnetic ions (typically of a few atomic percents of Mn 2+ ions) and very heavy doping with conducting carriers (at the level of 10 20 - 10 21 cm -3 ) a ferromagnetic transition can be induced in such diluted magnetic semiconductors (also known as semimagnetic semiconductors). In the lecture the spectacular experimental observations of carrier concentration induced ferromagnetism will be discussed for three model semiconductor crystals. p - Ga 1-x Mn x As currently the most actively studied and most perspective ferromagnetic semiconductor of III-V group, in which ferromagnetism appears due to Mn ions providing both local magnetic moments and acting as acceptor centers. p - Sn 1-x Mn x Te and p - Ge 1-x Mn x Te classical diluted magnetic semiconductors of IV-VI group, in which paramagnet-ferromagnet and ferromagnet-spin glass transitions are found for very high hole concentration. n - Eu 1-x Gd x Te mixed magnetic crystals, in which the substitution of Gd 3+ ions for Eu 2+ ions creates very high electron concentration and transforms antiferromagnetic EuTe (insulating compound) into ferromagnetic n-type semiconductor alloy. For each of these materials systems the key physical features will be discussed concerning: local magnetic moments formation, magnetic phase diagram as a function of magnetic ions and carrier concentration as well as Curie temperature and magnetic anisotropy engineering. Various theoretical models proposed to explain the effect of carrier concentration induced ferromagnetism in semiconductors will be briefly discussed involving mean field approaches based on Zener and RKKY

  11. Room-temperature ductile inorganic semiconductor

    Science.gov (United States)

    Shi, Xun; Chen, Hongyi; Hao, Feng; Liu, Ruiheng; Wang, Tuo; Qiu, Pengfei; Burkhardt, Ulrich; Grin, Yuri; Chen, Lidong

    2018-05-01

    Ductility is common in metals and metal-based alloys, but is rarely observed in inorganic semiconductors and ceramic insulators. In particular, room-temperature ductile inorganic semiconductors were not known until now. Here, we report an inorganic α-Ag2S semiconductor that exhibits extraordinary metal-like ductility with high plastic deformation strains at room temperature. Analysis of the chemical bonding reveals systems of planes with relatively weak atomic interactions in the crystal structure. In combination with irregularly distributed silver-silver and sulfur-silver bonds due to the silver diffusion, they suppress the cleavage of the material, and thus result in unprecedented ductility. This work opens up the possibility of searching for ductile inorganic semiconductors/ceramics for flexible electronic devices.

  12. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  13. Hypersonic modes in nanophononic semiconductors.

    Science.gov (United States)

    Hepplestone, S P; Srivastava, G P

    2008-09-05

    Frequency gaps and negative group velocities of hypersonic phonon modes in periodically arranged composite semiconductors are presented. Trends and criteria for phononic gaps are discussed using a variety of atomic-level theoretical approaches. From our calculations, the possibility of achieving semiconductor-based one-dimensional phononic structures is established. We present results of the location and size of gaps, as well as negative group velocities of phonon modes in such structures. In addition to reproducing the results of recent measurements of the locations of the band gaps in the nanosized Si/Si{0.4}Ge{0.6} superlattice, we show that such a system is a true one-dimensional hypersonic phononic crystal.

  14. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  15. Mechanism for Self-Reacted Friction Stir Welding

    Science.gov (United States)

    Venable, Richard; Bucher, Joseph

    2004-01-01

    A mechanism has been designed to apply the loads (the stirring and the resection forces and torques) in self-reacted friction stir welding. This mechanism differs somewhat from mechanisms used in conventional friction stir welding, as described below. The tooling needed to apply the large reaction loads in conventional friction stir welding can be complex. Self-reacted friction stir welding has become popular in the solid-state welding community as a means of reducing the complexity of tooling and to reduce costs. The main problems inherent in self-reacted friction stir welding originate in the high stresses encountered by the pin-and-shoulder assembly that produces the weld. The design of the present mechanism solves the problems. The mechanism includes a redesigned pin-and-shoulder assembly. The welding torque is transmitted into the welding pin by a square pin that fits into a square bushing with set-screws. The opposite or back shoulder is held in place by a Woodruff key and high-strength nut on a threaded shaft. The Woodruff key reacts the torque, while the nut reacts the tensile load on the shaft.

  16. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  17. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  18. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  19. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  20. Study of Transport and Micro-structural properties of Magnesium Di-Boride Strand under react and bend mode and bend and react mode

    International Nuclear Information System (INIS)

    Kundu, Ananya; Kumar Das, Subrat; Bano, Anees; Pradhan, Subrata

    2017-01-01

    I-V characterization of commercial multi-filamentary Magnesium Di-Boride (MgB 2 ) wire of diameter 0.83 mm were studied in Cryocooler at self-field I-V characterization system under both react and bend mode and bend and react mode for a range of temperature 6 K - 25 K. This study is of practical technical relevance where the heat treatment of the superconducting wire makes the wire less flexible for winding in magnet and in other applications. In the present work the bending diameter was varied from 40 mm to 20 mm and for each case critical current (I c ) of the strand is measured for above range of temperature. A customized sample holder is fabricated and thermally anchored with the 2 nd cold stage of Cryocooler. It is observed from the measurement that the strand is more susceptible to degradation for react and bend cases. The transport measurement of the strand was accompanied by SEM analyses of bend samples. Also the tensile strength of the raw strands and the heat treated strands were carried out at room temperature in Universal Testing Machine (UTM) to have an estimate about the limiting winding tension value during magnet fabrication. (paper)

  1. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  2. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  3. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  4. Evolution of a chemically reacting plume in a ventilated room

    Science.gov (United States)

    Conroy, D. T.; Smith, Stefan G. Llewellyn; Caulfield, C. P.

    2005-08-01

    The dynamics of a second-order chemical reaction in an enclosed space driven by the mixing produced by a turbulent buoyant plume are studied theoretically, numerically and experimentally. An isolated turbulent buoyant plume source is located in an enclosure with a single external opening. Both the source and the opening are located at the bottom of the enclosure. The enclosure is filled with a fluid of a given density with a fixed initial concentration of a chemical. The source supplies a constant volume flux of fluid of different density containing a different chemical of known and constant concentration. These two chemicals undergo a second-order non-reversible reaction, leading to the creation of a third product chemical. For simplicity, we restrict attention to the situation where the reaction process does not affect the density of the fluids involved. Because of the natural constraint of volume conservation, fluid from the enclosure is continually vented. We study the evolution of the various chemical species as they are advected by the developing ventilated filling box process within the room that is driven by the plume dynamics. In particular, we study both the mean and vertical distributions of the chemical species as a function of time within the room. We compare the results of analogue laboratory experiments with theoretical predictions derived from reduced numerical models, and find excellent agreement. Important parameters for the behaviour of the system are associated with the source volume flux and specific momentum flux relative to the source specific buoyancy flux, the ratio of the initial concentrations of the reacting chemical input in the plume and the reacting chemical in the enclosed space, the reaction rate of the chemicals and the aspect ratio of the room. Although the behaviour of the system depends on all these parameters in a non-trivial way, in general the concentration within the room of the chemical input at the isolated source passes

  5. Reduced semiconductor three-level interline dynamic voltage restorer

    DEFF Research Database (Denmark)

    Zhang, Lei; Loh, Poh Chang; Gao, Feng

    2011-01-01

    IDVR system are mainly attributed to its complexity in topology and underutilizations of semiconductors. Aimed to improve the system in these aspects, the paper proposes a new IDVR topology with 25% reduction in semiconductors totally used. The theoretical analysis and its operating principles are also...

  6. Second law analysis of a reacting temperature dependent viscous ...

    African Journals Online (AJOL)

    In this paper, entropy generation during the flow of a reacting viscous fluid through an inclined Channel with isothermal walls are investigated. The coupled energy and momentum equations were solved numerically. Previous results in literature (Adesanya et al 2006 [[17]) showed both velocity and temperature have two ...

  7. Three-dimensional reacting shock–bubble interaction

    NARCIS (Netherlands)

    Diegelmann, Felix; Hickel, S.; Adams, Nikolaus A.

    2017-01-01

    We investigate a reacting shock–bubble interaction through three-dimensional numerical simulations with detailed chemistry. The convex shape of the bubble focuses the shock and generates regions of high pressure and temperature, which are sufficient to ignite the diluted stoichiometric

  8. Large-Eddy Simulations of Reacting Liquid Spray

    Science.gov (United States)

    Lederlin, Thomas; Sanjose, Marlene; Gicquel, Laurent; Cuenot, Benedicte; Pitsch, Heinz; Poinsot, Thierry

    2008-11-01

    Numerical simulation, which is commonly used in many stages of aero-engine design, still has to demonstrate its predictive capability for two-phase reacting flows. This study is a collaboration between Stanford University and CERFACS to perform LES of a realistic spray combustor installed at ONERA, Toulouse. The experimental configuration is computed on the same unstructured mesh with two different solvers: Stanford's CDP code and CERFACS's AVBP code. CDP uses a low-Mach, variable-density solver with implicit time advancement. Droplets are tracked in a Lagrangian point-particle framework. The combustion model uses a flamelet approach, based on two transported scalars, mixture fraction and reaction progress variable. AVBP is a fully compressible solver with explicit time advancement. The liquid phase is described with an Eulerian method. The flame-turbulence interaction is modeled using a dynamically-thickened flame. Results are compared with experimental data for three regimes: purely gaseous non-reacting flow, non-reacting flow with evaporating droplets, reacting flow with droplets. Both simulations show a good agreement with experimental data and also stress the difference and relative advantages of the numerical methods.

  9. REAC/TS radiation accident registry. Update of accidents in the United States

    International Nuclear Information System (INIS)

    Ricks, R.C.; Berger, M.E.; Holloway, E.C.; Goans, R.E.

    2000-01-01

    Serious injury due to ionizing radiation is a rare occurrence. From 1944 to the present, 243 US accidents meeting dose criteria for classification as serious are documented in the REAC/TS Registry. Thirty individuals have lost their lives in radiation accidents in the United States. The Registry is part of the overall REAC/TS program providing 24-hour direct or consultative assistance regarding medical and heath physics problems associated with radiation accidents in local, national, and international incidents. The REAC/TS Registry serves as a repository of medically important information documenting the consequences of these accidents. Registry data are gathered from various sources. These include reports from the World Heath Organization (WHO), International Atomic Energy Agency (IAEA), US Nuclear Regulatory Commission (US NRC), state radiological health departments, medical/health physics literature, personal communication, the Internet, and most frequently, from calls for medical assistance to REAC/TS, as part of our 24-hour medical assistance program. The REAC/TS Registry for documentation of radiation accidents serves several useful purposes: 1) weaknesses in design, safety practices, training or control can be identified, and trends noted; 2) information regarding the medical consequences of injuries and the efficacy of treatment protocols is available to the treating physician; and 3) Registry case studies serve as valuable teaching tools. This presentation will review and summarize data on the US radiation accidents including their classification by device, accident circumstances, and frequency by respective states. Data regarding accidents with fatal outcomes will be reviewed. The inclusion of Registry data in the IAEA's International Reporting System of Radiation Events (RADEV) will also be discussed. (author)

  10. Characterization of forced response of density stratified reacting wake

    Science.gov (United States)

    Pawar, Samadhan A.; Sujith, Raman I.; Emerson, Benjamin; Lieuwen, Tim

    2018-02-01

    The hydrodynamic stability of a reacting wake depends primarily on the density ratio [i.e., ratio of unburnt gas density (ρu) to burnt gas density (ρb)] of the flow across the wake. The variation of the density ratio from high to low value, keeping ρ u / ρ b > 1 , transitions dynamical characteristics of the reacting wake from a linearly globally stable (or convectively unstable) to a globally unstable mode. In this paper, we propose a framework to analyze the effect of harmonic forcing on the deterministic and synchronization characteristics of reacting wakes. Using the recurrence quantification analysis of the forced wake response, we show that the deterministic behaviour of the reacting wake increases as the amplitude of forcing is increased. Furthermore, for different density ratios, we found that the synchronization of the top and bottom branches of the wake with the forcing signal is dependent on whether the mean frequency of the natural oscillations of the wake (fn) is lesser or greater than the frequency of external forcing (ff). We notice that the response of both branches (top and bottom) of the reacting wake to the external forcing is asymmetric and symmetric for the low and high density ratios, respectively. Furthermore, we characterize the phase-locking behaviour between the top and bottom branches of the wake for different values of density ratios. We observe that an increase in the density ratio results in a gradual decrease in the relative phase angle between the top and bottom branches of the wake, which leads to a change in the vortex shedding pattern from a sinuous (anti-phase) to a varicose (in-phase) mode of the oscillations.

  11. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  12. Squeezing in an injection-locked semiconductor laser

    Science.gov (United States)

    Inoue, S.; Machida, S.; Yamamoto, Y.; Ohzu, H.

    1993-09-01

    The intensity-noise properties of an injection-locked semiconductor laser were studied experimentally. The constant-current-driven semiconductor laser producing the amplitude-squeezed state whose intensity noise was reduced below the standard quantum limit (SQL) by 0.72 dB was injection-locked by an external master laser. The measured intensity-noise level of the injection-locked semiconductor laser was 0.91 dB below the SQL. This experimental result indicates that a phase-coherent amplitude-squeezed state or squeezed vacuum state together with a reference local oscillator wave can be generated directly by semiconductor laser systems.

  13. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  14. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  15. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  16. Modeling reacting gases and aftertreatment devices for internal combustion engines

    Science.gov (United States)

    Depcik, Christopher David

    As more emphasis is placed worldwide on reducing greenhouse gas emissions, automobile manufacturers have to create more efficient engines. Simultaneously, legislative agencies want these engines to produce fewer problematic emissions such as nitrogen oxides and particulate matter. In response, newer combustion methods, like homogeneous charge compression ignition and fuel cells, are being researched alongside the old standard of efficiency, the compression ignition or diesel engine. These newer technologies present a number of benefits but still have significant challenges to overcome. As a result, renewed interest has risen in making diesel engines cleaner. The key to cleaning up the diesel engine is the placement of aftertreatment devices in the exhaust. These devices have shown great potential in reducing emission levels below regulatory levels while still allowing for increased fuel economy versus a gasoline engine. However, these devices are subject to many flow control issues. While experimental evaluation of these devices helps to understand these issues better, it is impossible to solve the problem through experimentation alone because of time and cost constraints. Because of this, accurate models are needed in conjunction with the experimental work. In this dissertation, the author examines the entire exhaust system including reacting gas dynamics and aftertreatment devices, and develops a complete numerical model for it. The author begins by analyzing the current one-dimensional gas-dynamics simulation models used for internal combustion engine simulations. It appears that more accurate and faster numerical method is available, in particular, those developed in aeronautical engineering, and the author successfully implements one for the exhaust system. The author then develops a comprehensive literature search to better understand the aftertreatment devices. A number of these devices require a secondary injection of fuel or reductant in the exhaust stream

  17. Acute hepatitis due to Epstein–Barr virus with cross-reacting antibodies to cytomegalovirus

    Directory of Open Access Journals (Sweden)

    Asli Karadeniz

    2018-01-01

    Full Text Available Epstein–Barr virus (EBV is the cause of systemic infection known as infectious mononucleosis with classic presentation of fever, oropharyngitis and lymphadenitis. EBV rarely causes acute hepatitis. In this report, we present a 19-year-old patient presented with nausea, fatigue and jaundice. Her physical examination and laboratory tests revealed the diagnosis as acute hepatitis due to EBV with cross-reacting antibodies to cytomegalovirus.

  18. Optical Regeneration and Noise in Semiconductor Devices

    DEFF Research Database (Denmark)

    Öhman, Filip

    2005-01-01

    In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R-regenerator......In this report all-optical 2R-regeneration in optical communication systems is investigated. A simple regenerator device based on concatenated semiconductor optical amplifiers (SOAs) and electro absorbers (EAs) is introduced and examined. Experiments show that the monolithic SOA-EA 2R...

  19. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  20. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  1. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  2. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  3. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  4. Method of manufacturing semiconductor devices

    International Nuclear Information System (INIS)

    Sun, Y.S.E.

    1980-01-01

    A method of improving the electrical characteristics of semiconductor devices such as SCR's, rectifiers and triacs during their manufacture is described. The system consists of electron irradiation at an energy in excess of 250 KeV and most preferably between 1.5 and 12 MeV, producing an irradiation dose of between 5.10 12 and 5.10 15 electrons per sq. cm., and at a temperature in excess of 100 0 C preferably between 150 and 375 0 C. (U.K.)

  5. Chaotic bursting in semiconductor lasers

    Science.gov (United States)

    Ruschel, Stefan; Yanchuk, Serhiy

    2017-11-01

    We investigate the dynamic mechanisms for low frequency fluctuations in semiconductor lasers subjected to delayed optical feedback, using the Lang-Kobayashi model. This system of delay differential equations displays pronounced envelope dynamics, ranging from erratic, so called low frequency fluctuations to regular pulse packages, if the time scales of fast oscillations and envelope dynamics are well separated. We investigate the parameter regions where low frequency fluctuations occur and compute their Lyapunov spectra. Using the geometric singular perturbation theory, we study this intermittent chaotic behavior and characterize these solutions as bursting slow-fast oscillations.

  6. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  7. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  8. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  9. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  10. Electronic paramagnetic resonance in the Mn In X (X:Te,S) diluted magnetic semiconductor system; Resonancia paramagnetica electronica en el sistema semiconductor magnetico diluido Cd Mn In X (X:Te,S)

    Energy Technology Data Exchange (ETDEWEB)

    Vincent, Bernardo; Betancourt, Luis; Sagredo, Vicente [Universidad de los Andes, Merida (Venezuela). Dept. de Fisica; Alcala, Rafael [Zaragoza Univ. (Spain). Dept. de Fisica de la Materia Condensada

    1997-12-31

    Semiconductor compounds wit the II-III-VI stoichiometry are very interesting materials since they present very good semiconducting characteristics and, along with strong magnetic properties, these II Mn In VI compounds have a great potential as opt and magneto-electronic devices. Among the possible magnetic properties of the materials is the presence of the spin-glass phase. Electron paramagnetic resonance is one of the techniques used to confirm this phase. The chosen crystals were chosen by chemical vapor transport. The absorption lines of these two families with 0.1 x 1 were all Lorentzian in shape and centred at g=2. A large broadening of the resonance line width was observed when lowering the temperature to below 80 K. This behaviour was fitted to the known existing models, and good values of the calculated parameters were obtained (author). 18 refs., 2 figs., 2 tabs.

  11. Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology

    International Nuclear Information System (INIS)

    Dong, S.L.; Chu, T.C.; Lan, G.Y.; Wu, T.H.; Lin, Y.C.; Lee, J.S.

    2002-01-01

    Monitoring radiation exposure during diagnostic radiographic procedures has recently become an area of interest. In recent years, the LiF:Mg,Cu,P thermoluminescence dosimeter (TLD-100H) and the highly sensitive metal oxide semiconductor field effect transistor (MOSFET) dosimeter were introduced as good candidates for entrance skin dose measurements in diagnostic radiology. In the present study, the TLD-100H and the MOSFET dosimeters were evaluated for sensitivity, linearity, energy, angular dependence, and post-exposure response. Our results indicate that the TLD-100H dosimeter has excellent linearity within diagnostic energy ranges and its sensitivity variations were under 3% at tube potentials from 40 Vp to 125 kVp. Good linearity was also observed with the MOSFET dosimeter, but in low-dose regions the values are less reliable and were found to be a function of the tube potentials. Both dosimeters also presented predictable angular dependence in this study. Our findings suggest that the TLD-100H dosimeter is more appropriate for low-dose diagnostic procedures such as chest and skull projections. The MOSFET dosimeter system is valuable for entrance skin dose measurement with lumbar spine projections and certain fluoroscopic procedures

  12. Shift of semimetal-semiconductor bond direction on “0 1 1” to “1 1 1” Bismuth quazi-two-dimension system

    Science.gov (United States)

    Yazdani, Ahmad; Hamreh, Sajad

    2018-03-01

    The electronic structure of the nanocrystallines and quasi-two-dimensional systems strongly impressed by the thermodynamic- behavior mainly due to excess of hidden surface free energy. Therefore, the stability of crystalline structure’s change could be related to band-offset of bond rupturing of atomic displacements. whereas for the electronic-structure of "Bi" it seams the competition of L.S and bond exchange should be effectively dominated. Besides all of the characters behave spatial like strong sensitive oxidation here it is supposed that strong correlated electronic structure in the absence of oxygen is resulted on direction of redistribution of surface chemical bond formation before any reconstructive structure. Where • The metallic direction of electronic structure “0 1 1” is changed to “1 1 1” semiconductor direction. • the effect of L.S is more evident on the local density of state while it is not observable around the fermi level. • Strong effect of spin-orbit interaction on splitting of the valance to nearly conduction band around the fermi level is more evident.

  13. Beat-wave generation of plasmons in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1995-08-01

    It is shown that in semiconductor plasmas, it is possible to generate large amplitude plasma waves by the beating of two laser beams with frequency difference close to the plasma frequency. For narrow gap semiconductor (for example n-type InSb), the system can simulate the physics underlying beat wave generation in relativistic gaseous plasmas. (author). 7 refs

  14. Electronic properties of semiconductor surfaces and metal/semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tallarida, M.

    2005-05-15

    This thesis reports investigations of the electronic properties of a semiconductor surface (silicon carbide), a reactive metal/semiconductor interface (manganese/silicon) and a non-reactive metal/semiconductor interface (aluminum-magnesium alloy/silicon). The (2 x 1) reconstruction of the 6H-SiC(0001) surface has been obtained by cleaving the sample along the (0001) direction. This reconstruction has not been observed up to now for this compound, and has been compared with those of similar elemental semiconductors of the fourth group of the periodic table. This comparison has been carried out by making use of photoemission spectroscopy, analyzing the core level shifts of both Si 2p and C 1s core levels in terms of charge transfer between atoms of both elements and in different chemical environments. From this comparison, a difference between the reconstruction on the Si-terminated and the C-terminated surface was established, due to the ionic nature of the Si-C bond. The growth of manganese films on Si(111) in the 1-5 ML thickness range has been studied by means of LEED, STM and photoemission spectroscopy. By the complementary use of these surface science techniques, two different phases have been observed for two thickness regimes (<1 ML and >1 ML), which exhibit a different electronic character. The two reconstructions, the (1 x 1)-phase and the ({radical}3 x {radical}3)R30 -phase, are due to silicide formation, as observed in core level spectroscopy. The growth proceeds via island formation in the monolayer regime, while the thicker films show flat layers interrupted by deep holes. On the basis of STM investigations, this growth mode has been attributed to strain due to lattice mismatch between the substrate and the silicide. Co-deposition of Al and Mg onto a Si(111) substrate at low temperature (100K) resulted in the formation of thin alloy films. By varying the relative content of both elements, the thin films exhibited different electronic properties

  15. A model for reaction rates in turbulent reacting flows

    Science.gov (United States)

    Chinitz, W.; Evans, J. S.

    1984-01-01

    To account for the turbulent temperature and species-concentration fluctuations, a model is presented on the effects of chemical reaction rates in computer analyses of turbulent reacting flows. The model results in two parameters which multiply the terms in the reaction-rate equations. For these two parameters, graphs are presented as functions of the mean values and intensity of the turbulent fluctuations of the temperature and species concentrations. These graphs will facilitate incorporation of the model into existing computer programs which describe turbulent reacting flows. When the model was used in a two-dimensional parabolic-flow computer code to predict the behavior of an experimental, supersonic hydrogen jet burning in air, some improvement in agreement with the experimental data was obtained in the far field in the region near the jet centerline. Recommendations are included for further improvement of the model and for additional comparisons with experimental data.

  16. Experimental thermodynamics experimental thermodynamics of non-reacting fluids

    CERN Document Server

    Neindre, B Le

    2013-01-01

    Experimental Thermodynamics, Volume II: Experimental Thermodynamics of Non-reacting Fluids focuses on experimental methods and procedures in the study of thermophysical properties of fluids. The selection first offers information on methods used in measuring thermodynamic properties and tests, including physical quantities and symbols for physical quantities, thermodynamic definitions, and definition of activities and related quantities. The text also describes reference materials for thermometric fixed points, temperature measurement under pressures, and pressure measurements. The publicatio

  17. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  18. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  19. Interaction of tellurium and tellurium-containing semiconductor compounds with solutions of HI-HNO3-H2O system

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Sava, A.A.; Tomashik, Z.F.

    1994-01-01

    As a result of experimental investigations and physical-chemical simulation are established regularities of solution of semiconducting tellurium-containing compounds in HI-HNO 3 -H 2 O systems. In HNO 3 -HI system solutions enriched by HNO 3 are not used for CdTe treatment but HI enriched solution are similar in composition with I 2 -HI solutions. Solution of the given tellurium-containing materials proceeds by a chemical mechanism and is determined by tellurium oxidation with iodine

  20. The detector control system of the ATLAS SemiConductor tracker during macro-assembly and integration

    Czech Academy of Sciences Publication Activity Database

    Abdesselam, A.; Barr, A.; Basiladze, S.; Böhm, Jan; Šťastný, Jan

    2008-01-01

    Roč. 3, - (2008), P02007/1-P02007/29 ISSN 1748-0221 R&D Projects: GA MŠk LA08032; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : solid state detectors * large detector systems for particle and astroparticle physics * detector control systems Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.333, year: 2008

  1. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  2. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  3. A mathematical model for chemical reactions with actinide elements in the aqueous nitric acid solution: REACT

    International Nuclear Information System (INIS)

    Tachimori, Shoichi

    1990-02-01

    A mathematical model of chemical reactions with actinide elements: REACT code, was developed to simulate change of valency states of U, Pu and Np in the aqueous nitric acid solution. Twenty seven rate equations for the redox reactions involving some reductants, disproportionation reactions, and radiolytic growth and decay reaction of nitrous acid were programmed in the code . Eight numerical solution methods such as Porsing method to solve the rate equations were incorporated parallel as options depending on the characteristics of the reaction systems. The present report gives a description of the REACT code, e.g., chemical reactions and their rate equations, numerical solution methods, and some examples of the calculation results. A manual and a source file of the program was attached to the appendix. (author)

  4. EDITORIAL The 23rd Nordic Semiconductor Meeting The 23rd Nordic Semiconductor Meeting

    Science.gov (United States)

    Ólafsson, Sveinn; Sveinbjörnsson, Einar

    2010-12-01

    A Nordic Semiconductor Meeting is held every other year with the venue rotating amongst the Nordic countries of Denmark, Finland, Iceland, Norway and Sweden. The focus of these meetings remains 'original research and science being carried out on semiconductor materials, devices and systems'. Reports on industrial activity have usually featured. The topics have ranged from fundamental research on point defects in a semiconductor to system architecture of semiconductor electronic devices. Proceedings from these events are regularly published as a topical issue of Physica Scripta. All of the papers in this topical issue have undergone critical peer review and we wish to thank the reviewers and the authors for their cooperation, which has been instrumental in meeting the high scientific standards and quality of the series. This meeting of the 23rd Nordic Semiconductor community, NSM 2009, was held at Háskólatorg at the campus of the University of Iceland, Reykjavik, Iceland, 14-17 June 2009. Support was provided by the University of Iceland. Almost 50 participants presented a broad range of topics covering semiconductor materials and devices as well as related material science interests. The conference provided a forum for Nordic and international scientists to present and discuss new results and ideas concerning the fundamentals and applications of semiconductor materials. The meeting aim was to advance the progress of Nordic science and thus aid in future worldwide technological advances concerning technology, education, energy and the environment. Topics Theory and fundamental physics of semiconductors Emerging semiconductor technologies (for example III-V integration on Si, novel Si devices, graphene) Energy and semiconductors Optical phenomena and optical devices MEMS and sensors Program 14 June Registration 13:00-17:00 15 June Meeting program 09:30-17:00 and Poster Session I 16 June Meeting program 09:30-17:00 and Poster Session II 17 June Excursion and dinner

  5. Symmetrization of mathematical model of charge transport in semiconductors

    Directory of Open Access Journals (Sweden)

    Alexander M. Blokhin

    2002-11-01

    Full Text Available A mathematical model of charge transport in semiconductors is considered. The model is a quasilinear system of differential equations. A problem of finding an additional entropy conservation law and system symmetrization are solved.

  6. Controlling Molecular Doping in Organic Semiconductors.

    Science.gov (United States)

    Jacobs, Ian E; Moulé, Adam J

    2017-11-01

    The field of organic electronics thrives on the hope of enabling low-cost, solution-processed electronic devices with mechanical, optoelectronic, and chemical properties not available from inorganic semiconductors. A key to the success of these aspirations is the ability to controllably dope organic semiconductors with high spatial resolution. Here, recent progress in molecular doping of organic semiconductors is summarized, with an emphasis on solution-processed p-type doped polymeric semiconductors. Highlighted topics include how solution-processing techniques can control the distribution, diffusion, and density of dopants within the organic semiconductor, and, in turn, affect the electronic properties of the material. Research in these areas has recently intensified, thanks to advances in chemical synthesis, improved understanding of charged states in organic materials, and a focus on relating fabrication techniques to morphology. Significant disorder in these systems, along with complex interactions between doping and film morphology, is often responsible for charge trapping and low doping efficiency. However, the strong coupling between doping, solubility, and morphology can be harnessed to control crystallinity, create doping gradients, and pattern polymers. These breakthroughs suggest a role for molecular doping not only in device function but also in fabrication-applications beyond those directly analogous to inorganic doping. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Efficiency of a semiconductor diode laser in disinfection of the root canal system in endodontics: An in vitro study

    Directory of Open Access Journals (Sweden)

    Mithra N Hegde

    2015-01-01

    Full Text Available Context: The success of endodontic treatment depends on the eradication of microbes from the rootcanal system and prevention of reinfection. The root canal is shaped with hand and rotary instruments under constant irrigation to remove the inflamed and necrotic tissue, microbes/biofilms, and other debris from the root canal space. The main goal of instrumentation is to facilitate effective irrigation, disinfection, and filling. Throughout the history of endodontics, endeavors have continuously been made to develop more effective irrigant delivery and agitation systems for root canal irrigation. Aim: The purpose of this study was to evaluate the efficacy of three different newer irrigation delivery techniques; namely Endovac, Stropko Irrigator, and laser disinfection with 5.25% sodium hypochlorite. Materials and Methods: Forty teeth after disinfection by Occupational Safety and Health Administration (OSHA regulations were instrumented and inoculated with bacterial strains of Enterococcusfaecalis. The teeth were divided into four groups, in the experimental group, the irrigants were delivered with the Endovac, Stropko Irrigator, and laser irradiation and the control group which received no irrigation. The samples were incubated in Muller-Hilton media plates and incubated for 24 h. Statistical analysis used: The colony forming units were determined and statistically analyzed using the chi-square test. Results: According to the results obtained, laser irradiation resulted in complete disinfection of the root canal system. The Endovac system resulted in significant disinfection as compared to the Stropko Irrigator system. Conclusion: Laser irradiation resulted in significantly higher antimicrobial effects compared with the Endovac and Stropko irrigation groups when in conjunction with sodium hypochlorite

  8. Semiconductor nanostructures for artificial photosynthesis

    Science.gov (United States)

    Yang, Peidong

    2012-02-01

    Nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have already been demonstrated as important materials for different energy conversion. One emerging and exciting direction is their application for solar to fuel conversion. The generation of fuels by the direct conversion of solar energy in a fully integrated system is an attractive goal, but no such system has been demonstrated that shows the required efficiency, is sufficiently durable, or can be manufactured at reasonable cost. One of the most critical issues in solar water splitting is the development of a suitable photoanode with high efficiency and long-term durability in an aqueous environment. Semiconductor nanowires represent an important class of nanostructure building block for direct solar-to-fuel application because of their high surface area, tunable bandgap and efficient charge transport and collection. Nanowires can be readily designed and synthesized to deterministically incorporate heterojunctions with improved light absorption, charge separation and vectorial transport. Meanwhile, it is also possible to selectively decorate different oxidation or reduction catalysts onto specific segments of the nanowires to mimic the compartmentalized reactions in natural photosynthesis. In this talk, I will highlight several recent examples in this lab using semiconductor nanowires and their heterostructures for the purpose of direct solar water splitting.

  9. The effect of phase morphology on the nature of long-lived charges in semiconductor polymer:fullerene systems

    KAUST Repository

    Dou, Fei; Domingo, Ester; Sakowicz, Maciej; Rezasoltani, Elham; McCarthy-Ward, Thomas; Heeney, Martin; Zhang, Xinping; Stingelin, Natalie; Silva, Carlos

    2015-01-01

    In this work, we investigate the effect of phase morphology on the nature of charges in poly(2,5-bis(3-tetradecyl-thiophen-2-yl)thieno[3,2,-b]thiophene) (pBTTT-C16) and phenyl-C61-butyric acid methyl ester (PC61BM) blends over timescales greater than hundreds of microseconds by quasi-steady-state photoinduced absorption spectroscopy. Specifically, we compare an essentially fully intermixed, one-phase system based on a 1 : 1 (by weight) pBTTT-C16 : PC61BM blend, known to form a co-crystal structure, with a two-phase morphology composed of relatively material-pure domains of the neat polymer and neat fullerene. The co-crystal occurs at a composition of up to 50 wt% PC61BM, because pBTTT-C16 is capable of hosting fullerene derivatives such as PC61BM in the cavities between its side chains. In contrast, the predominantly two-phase system can be obtained by manipulating a 1 : 1 polymer : fullerene blend with the assistance of a fatty acid methyl ester (dodecanoic acid methyl ester, Me12) as additive, which hinders co-crystal formation. We find that triplet excitons and polarons are generated in both phase morphologies. However, polarons are generated in the predominantly two-phase system at higher photon energy than for the structure based on the co-crystal phase. By means of a quasi-steady-state solution of a mesoscopic rate model, we demonstrate that the steady-state polaron generation efficiency and recombination rates are higher in the finely intermixed, one-phase system compared to the predominantly phase-pure, two-phase morphology. We suggest that the polarons generated in highly intermixed structures, such as the co-crystal investigated here, are localised polarons while those generated in the phase-separated polymer and fullerene systems are delocalised polarons. We expect this picture to apply generally to other organic-based heterojunctions of complex phase morphologies including donor:acceptor systems that form, for instance, molecularly mixed amorphous solid

  10. Positron annihilation and Wheeler complexes in semiconductors

    International Nuclear Information System (INIS)

    Prokop'ev, E.P.

    1995-01-01

    Properties of Ps-Ex (positron-exciton) complex nature Wheeler complexes that may be formed at irradiation of semiconductors and ion crystals by positrons at low temperature under conditions of optical excitation by excitons are studied. Binding energy of similar and more complex systems regarding decomposition in Ps and Ex and/or Ex ± exceeds, at least, 0.1 eV, while lifetime regarding biquantum-self-annihilation constitutes τ 2γ ∼5.02x10 - 10 κ c 3 c (κ c -phenomenological parameter of the effective mass method). The lifetime estimations enabled to conclude that Ps-Ex complexes may be detected in some oxide semiconductors, in zinc sulfide, as well as, in alkaline-haloid crystals. At the same time, in silicon, gallium arsenide and in other semiconductors of A 3 B 5 and A 2 B 6 it is highly improbable to observe these complexes. 27 refs

  11. Semiconductor laser using multimode interference principle

    Science.gov (United States)

    Gong, Zisu; Yin, Rui; Ji, Wei; Wu, Chonghao

    2018-01-01

    Multimode interference (MMI) structure is introduced in semiconductor laser used in optical communication system to realize higher power and better temperature tolerance. Using beam propagation method (BPM), Multimode interference laser diode (MMI-LD) is designed and fabricated in InGaAsP/InP based material. As a comparison, conventional semiconductor laser using straight single-mode waveguide is also fabricated in the same wafer. With a low injection current (about 230 mA), the output power of the implemented MMI-LD is up to 2.296 mW which is about four times higher than the output power of the conventional semiconductor laser. The implemented MMI-LD exhibits stable output operating at the wavelength of 1.52 μm and better temperature tolerance when the temperature varies from 283.15 K to 293.15 K.

  12. Optical Biosensors Based on Semiconductor Nanostructures

    Directory of Open Access Journals (Sweden)

    Raúl J. Martín-Palma

    2009-06-01

    Full Text Available The increasing availability of semiconductor-based nanostructures with novel and unique properties has sparked widespread interest in their use in the field of biosensing. The precise control over the size, shape and composition of these nanostructures leads to the accurate control of their physico-chemical properties and overall behavior. Furthermore, modifications can be made to the nanostructures to better suit their integration with biological systems, leading to such interesting properties as enhanced aqueous solubility, biocompatibility or bio-recognition. In the present work, the most significant applications of semiconductor nanostructures in the field of optical biosensing will be reviewed. In particular, the use of quantum dots as fluorescent bioprobes, which is the most widely used application, will be discussed. In addition, the use of some other nanometric structures in the field of biosensing, including porous semiconductors and photonic crystals, will be presented.

  13. Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

    Science.gov (United States)

    Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

    2018-02-01

    We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

  14. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Science.gov (United States)

    Zajicek, J.; Burian, M.; Soukup, P.; Novak, V.; Macko, M.; Jakubek, J.

    2017-01-01

    Multimodal medical imaging based on Magnetic Resonance is mainly combinated with one of the scintigraphic method like PET or SPECT. These methods provide functional information whereas magnetic resonance imaging provides high spatial resolution of anatomical information or complementary functional information. Fusion of imaging modalities allows researchers to obtain complimentary information in a single measurement. The combination of MRI with SPECT is still relatively new and challenging in many ways. The main complication of using SPECT in MRI systems is the presence of a high magnetic field therefore (ferro)magnetic materials have to be eliminated. Furthermore the application of radiofrequency fields within the MR gantry does not allow for the use of conductive structures such as the common heavy metal collimators. This work presents design and construction of an experimental MRI-SPECT insert system and its initial tests. This unique insert system consists of an MR-compatible SPECT setup with CdTe pixelated sensors Timepix tungsten collimators and a radiofrequency coil. Measurements were performed on a gelatine and tissue phantom with an embedded radioisotopic source (57Co 122 keV γ ray) inside the RF coil by the Bruker BioSpec 47/20 (4.7 T) MR animal scanner. The project was performed in the framework of the Medipix Collaboration.

  15. The effects of heavy doping on the electronic states in semiconductors

    International Nuclear Information System (INIS)

    Sernelius, B.E.

    1987-01-01

    The physics of semiconductors is reviewed. Topics included in the discussion are energy of the dopant system (kinetic energy in a many-valley semiconductor, exchange energy in an ellipsoidal Fermi volume, energy in a polar semiconductor), self energy shifts, band-gap narrowing, and piezo experiments. 31 refs., 27 figs

  16. ON THE ARTIFICIAL SEMICONDUCTOR MATERIALS | Adelabu ...

    African Journals Online (AJOL)

    For about the last three decades, semiconductor technology began to make its most apparent impact in Solid State Electronics. The field of photonics, which combines laser physics, electro-optics and nonlinear optics has expanded tremendously. Notably, modern light wave communications exemplify photonic systems.

  17. Testing of modern semiconductor memory structures

    NARCIS (Netherlands)

    Gaydadjiev, G.N.

    2007-01-01

    In this thesis, we study the problem of faults in modern semiconductor memory structures and their tests. According to the 2005 ITRS, the systems on chip (SoCs) are moving from logic and memory balanced chips to more memory dominated devices in order to cope with the increasing application

  18. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  19. Experimental MRI-SPECT insert system with Hybrid Semiconductor detectors Timepix for MR animal scanner Bruker 47/20

    Czech Academy of Sciences Publication Activity Database

    Zajíček, J.; Burian, M.; Soukup, P.; Novák, Vladimír; Macko, M.; Jakůbek, J.

    2017-01-01

    Roč. 12, January (2017), č. článku P01015. ISSN 1748-0221 Institutional support: RVO:68378297 Keywords : Gamma camera * SPECT * PET PET /CT * coronary CT angiography (CTA) * Gamma detectors (scintillators, CZT, HPG, HgI etc) * multi-modality systems * pixelated detectors and associated VLSI electronics Subject RIV: JB - Sensors, Measurment, Regulation OBOR OECD: Electrical and electronic engineering Impact factor: 1.220, year: 2016 http://iopscience.iop.org/article/10.1088/1748-0221/12/01/P01015

  20. Identification of streptococcal proteins reacting with sera from Behçet's disease and rheumatic disorders.

    Science.gov (United States)

    Cho, Sung Bin; Lee, Ju Hee; Ahn, Keun Jae; Cho, Suhyun; Park, Yong-Beom; Lee, Soo-Kon; Bang, Dongsik; Lee, Kwang Hoon

    2010-01-01

    We evaluated the reactivity of sera from Behçet's disease (BD), systemic lupus erythematosus (SLE), dermatomyositis (DM), rheumatoid arthritis (RA), and Takayasu's arteritis (TA) patients against human α-enolase and streptococcal α-enolase, and identified additional streptococcal antigens. Enzyme-linked immunosorbent assay (ELISA) and immunoblotting were performed using sera from patients with BD, SLE, DM, RA, and TA and healthy volunteers (control) against human α-enolase and streptococcal α-enolase. Immunoblot analysis and matrix-assisted laser desorption ionisation-time-of-flight mass spectrometry were used to identify and recombine other streptococcal antigens. Specific positive signals against recombinant human α-enolase were detected by IgM ELISA of serum samples from 50% of BD, 14.3% of SLE, 57.1% of DM, 42.9% of RA, and 57.1% of TA patients. Specific positive signals against streptococcal α-enolase were detected from 42.9% of BD, 14.3% of DM, and 14.3% of TA patients. No SLE and RA sera reacted against streptococcal α-enolase antigen. Streptococcal proteins reacting with sera were identified as hypothetical protein (HP) for SLE and DM patients, acid phosphatase (AP) for RA patients, and glyceraldehyde-3-phosphate dehydrogenase (GAPDH) for TA patients. We observed that RA patients did not present serum reactivity against either HP or GAPDH though BD, SLE, DM, and TA patients did. Also, AP reacted with sera from BD, SLE, DM, RA, and TA patients.

  1. Semiconductor Grade, Solar Silicon Purification Project. [photovoltaic solar energy conversion

    Science.gov (United States)

    Ingle, W. M.; Rosler, R. S.; Thompson, S. W.; Chaney, R. E.

    1979-01-01

    A low cost by-product, SiF4, is reacted with mg silicon to form SiF2 gas which is polymerized. The (SiF2)x polymer is heated forming volatile SixFy homologues which disproportionate on a silicon particle bed forming silicon and SiF4. The silicon analysis procedure relied heavily on mass spectroscopic and emission spectroscopic analysis. These analyses demonstrated that major purification had occured and some samples were indistinguishable from semiconductor grade silicon (except possibly for phosphorus). However, electrical analysis via crystal growth reveal that the product contains compensated phosphorus and boron.

  2. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  3. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  4. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  5. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  6. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  7. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  8. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  9. SQL Triggers Reacting on Time Events: An Extension Proposal

    Science.gov (United States)

    Behrend, Andreas; Dorau, Christian; Manthey, Rainer

    Being able to activate triggers at timepoints reached or after time intervals elapsed has been acknowledged by many authors as a valuable functionality of a DBMS. Recently, the interest in time-based triggers has been renewed in the context of data stream monitoring. However, up till now SQL triggers react to data changes only, even though research proposals and prototypes have been supporting several other event types, in particular time-based ones, since long. We therefore propose a seamless extension of the SQL trigger concept by time-based triggers, focussing on semantic issues arising from such an extension.

  10. Tax havens under international pressure: How do they react?

    OpenAIRE

    Patrice Pieretti; Giuseppe Pulina

    2015-01-01

    This paper contributes to the literature about tax havens by providing a more comprehensive analysis of their role. The aim is to analyze how low-tax jurisdictions can react to growing international pressure exerted, by high-tax countries, to enforce compliance with anti aggressive tax planning standards. To this end, we model how a small tax haven tries to be attractive to multinationals located in a high-tax region by providing aggressive tax planning services and/or a favorable environment...

  11. ReACT Methodology Proof of Concept Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Bri Rolston; Sarah Freeman

    2014-03-01

    The Department of Energy’s Office of Electricity Delivery and Energy Reliability (DOE-OE) funded INL Researchers to evaluate a novel process for assessing and mitigating cyber security risks. The proof of concept level of the method was tested in an industry environment. This case study, plus additional case studies will support the further development of the method into a tool to assist industry in securing their critical networks. This report provides an understanding of the process developed in the Response Analysis and Characterization Tool (ReACT) project. This report concludes with lessons learned and a roadmap for final development of these tools for use by industry.

  12. Numerical simulation of low Mach number reacting flows

    International Nuclear Information System (INIS)

    Bell, J B; Aspden, A J; Day, M S; Lijewski, M J

    2007-01-01

    Using examples from active research areas in combustion and astrophysics, we demonstrate a computationally efficient numerical approach for simulating multiscale low Mach number reacting flows. The method enables simulations that incorporate an unprecedented range of temporal and spatial scales, while at the same time, allows an extremely high degree of reaction fidelity. Sample applications demonstrate the efficiency of the approach with respect to a traditional time-explicit integration method, and the utility of the methodology for studying the interaction of turbulence with terrestrial and astrophysical flame structures

  13. Semiconductor industry wafer fab exhaust management

    CERN Document Server

    Sherer, Michael J

    2005-01-01

    Given the myriad exhaust compounds and the corresponding problems that they can pose in an exhaust management system, the proper choice of such systems is a complex task. Presenting the fundamentals, technical details, and general solutions to real-world problems, Semiconductor Industry: Wafer Fab Exhaust Management offers practical guidance on selecting an appropriate system for a given application. Using examples that provide a clear understanding of the concepts discussed, Sherer covers facility layout, support facilities operations, and semiconductor process equipment, followed by exhaust types and challenges. He reviews exhaust point-of-use devices and exhaust line requirements needed between process equipment and the centralized exhaust system. The book includes information on wet scrubbers for a centralized acid exhaust system and a centralized ammonia exhaust system and on centralized equipment to control volatile organic compounds. It concludes with a chapter devoted to emergency releases and a separ...

  14. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  16. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  17. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  18. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  20. Semiconductor X-ray detectors

    CERN Document Server

    Lowe, Barrie Glyn

    2014-01-01

    Identifying and measuring the elemental x-rays released when materials are examined with particles (electrons, protons, alpha particles, etc.) or photons (x-rays and gamma rays) is still considered to be the primary analytical technique for routine and non-destructive materials analysis. The Lithium Drifted Silicon (Si(Li)) X-Ray Detector, with its good resolution and peak to background, pioneered this type of analysis on electron microscopes, x-ray fluorescence instruments, and radioactive source- and accelerator-based excitation systems. Although rapid progress in Silicon Drift Detectors (SDDs), Charge Coupled Devices (CCDs), and Compound Semiconductor Detectors, including renewed interest in alternative materials such as CdZnTe and diamond, has made the Si(Li) X-Ray Detector nearly obsolete, the device serves as a useful benchmark and still is used in special instances where its large, sensitive depth is essential. Semiconductor X-Ray Detectors focuses on the history and development of Si(Li) X-Ray Detect...

  1. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  2. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  3. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  4. Temperature dependent electronic conduction in semiconductors

    International Nuclear Information System (INIS)

    Roberts, G.G.; Munn, R.W.

    1980-01-01

    This review describes the temperature dependence of bulk-controlled electronic currents in semiconductors. The scope of the article is wide in that it contrasts conduction mechanisms in inorganic and organic solids and also single crystal and disordered semiconductors. In many experimental situations it is the metal-semiconductor contact or the interface between two dissimilar semiconductors that governs the temperature dependence of the conductivity. However, in order to keep the length of the review within reasonable bounds, these topics have been largely avoided and emphasis is therefore placed on bulk-limited currents. A central feature of electronic conduction in semiconductors is the concentrations of mobile electrons and holes that contribute to the conductivity. Various statistical approaches may be used to calculate these densities which are normally strongly temperature dependent. Section 1 emphasizes the relationship between the position of the Fermi level, the distribution of quantum states, the total number of electrons available and the absolute temperature of the system. The inclusion of experimental data for several materials is designed to assist the experimentalist in his interpretation of activation energy curves. Sections 2 and 3 refer to electronic conduction in disordered solids and molecular crystals, respectively. In these cases alternative approaches to the conventional band theory approach must be considered. For example, the velocities of the charge carriers are usually substantially lower than those in conventional inorganic single crystal semiconductors, thus introducing the possibility of an activated mobility. Some general electronic properties of these materials are given in the introduction to each of these sections and these help to set the conduction mechanisms in context. (orig.)

  5. Experimental investigation of a reacting transverse jet in a high pressure oscillating vitiated crossflow

    Science.gov (United States)

    Fugger, Christopher A.

    Staged combustion is one design approach in a gas turbine engine to reduce pollutant emission levels. In axially staged combustion, portions of the air and fuel are injected downstream of a lean premixed low NOx primary combustion zone. The gas residence time at elevated temperatures is decreased resulting in lower thermal NOx, and the reduced oxygen and high temperature vitiated primary zone flow further help to reduce pollutant emissions and quickly complete combustion. One implementation of axially staged combustion is transverse fuel jet injection. An important consideration for staged combustion systems, though, is how the primary and secondary combustion zones can couple through the acoustic resonances of the chamber. These couplings can lead to additional source terms that pump energy into the resonant acoustic field and help sustain the high-amplitude combustor pressure oscillations. An understanding of these couplings is important so that it may be possible to design a secondary combustion system that provides inherent damping to the combustor system. To systematically characterize the coupling of a reacting jet in unsteady crossflow in detail, the effects of an an unsteady pressure flowfield and an unsteady velocity flowfield are separately investigated. An optically accessible resonant combustion chamber was designed and built as part of this work to generate a standing wave unsteady vitiated crossflow at a chamber pressure of 0.9 MPa. The location of transverse jet injection corresponds to one of two locations, where one location is the pressure node and the other location the pressure anti-node of the resonant chamber acoustic mode. The injection location is optically accessible, and the dynamic interactions between the transverse jet flow and the 1st and 2nd axial combustor modes are measured using 10 kHz OH-PLIF and 2D PIV. This document analyzes five test cases: two non-reacting jets and three reacting jets. All cases correspond to jet injection

  6. Nb3Sn dipole magnet reacted after winding

    International Nuclear Information System (INIS)

    Taylor, C.; Scanlan, R.; Peters, C.; Wolgast, R.; Gilbert, W.; Hassenzahl, W.; Meuser, R.; Rechen, J.

    1984-09-01

    A 5 cm bore dia., 1-m-long dipole model magnet was constructed by winding un-reacted cable, followed by reaction and epoxy-impregnation. Experience and test results are described on the 1.7 mm dia. internal-tin wire, the eleven-strand flattened cable, fiberglass insulation, and construction of the magnet. Each half of the magnet has two double-pancake-type windings that were reacted in a single operation. The two double-pancakes were then separately vacuum impregnated after soldering the flexible Nb-Ti leads to the Nb 3 Sn conductors. No iron flux return yoke was used. In initial tests a central field of 8.0 T was reached at 4.4 K. However, evidence from training behavior, and 1.8 K tests indicate that premature quenching, rather than critical current of the cable, limited the field intensity. The magnet was reassembled and more rigidly clamped; additional test results are reported

  7. Effects of continuum breakdown on hypersonic aerothermodynamics for reacting flow

    Science.gov (United States)

    Holman, Timothy D.; Boyd, Iain D.

    2011-02-01

    This study investigates the effects of continuum breakdown on the surface aerothermodynamic properties (pressure, stress, and heat transfer rate) of a sphere in a Mach 25 flow of reacting air in regimes varying from continuum to a rarefied gas. Results are generated using both continuum [computational fluid dynamics (CFD)] and particle [direct simulation Monte Carlo (DSMC)] approaches. The DSMC method utilizes a chemistry model that calculates the backward rates from an equilibrium constant. A preferential dissociation model is modified in the CFD method to better compare with the vibrationally favored dissociation model that is utilized in the DSMC method. Tests of these models are performed to confirm their validity and to compare the chemistry models in both numerical methods. This study examines the effect of reacting air flow on continuum breakdown and the surface properties of the sphere. As the global Knudsen number increases, the amount of continuum breakdown in the flow and on the surface increases. This increase in continuum breakdown significantly affects the surface properties, causing an increase in the differences between CFD and DSMC. Explanations are provided for the trends observed.

  8. Sticky tunes: how do people react to involuntary musical imagery?

    Directory of Open Access Journals (Sweden)

    Victoria J Williamson

    Full Text Available The vast majority of people experience involuntary musical imagery (INMI or 'earworms'; perceptions of spontaneous, repetitive musical sound in the absence of an external source. The majority of INMI episodes are not bothersome, while some cause disruption ranging from distraction to anxiety and distress. To date, little is known about how the majority of people react to INMI, in particular whether evaluation of the experience impacts on chosen response behaviours or if attempts at controlling INMI are successful or not. The present study classified 1046 reports of how people react to INMI episodes. Two laboratories in Finland and the UK conducted an identical qualitative analysis protocol on reports of INMI reactions and derived visual descriptive models of the outcomes using grounded theory techniques. Combined analysis carried out across the two studies confirmed that many INMI episodes were considered neutral or pleasant, with passive acceptance and enjoyment being among the most popular response behaviours. A significant number of people, however, reported on attempts to cope with unwanted INMI. The most popular and effective behaviours in response to INMI were seeking out the tune in question, and musical or verbal distraction. The outcomes of this study contribute to our understanding of the aetiology of INMI, in particular within the framework of memory theory, and present testable hypotheses for future research on successful INMI coping strategies.

  9. Sticky Tunes: How Do People React to Involuntary Musical Imagery?

    Science.gov (United States)

    Williamson, Victoria J.; Liikkanen, Lassi A.; Jakubowski, Kelly; Stewart, Lauren

    2014-01-01

    The vast majority of people experience involuntary musical imagery (INMI) or ‘earworms’; perceptions of spontaneous, repetitive musical sound in the absence of an external source. The majority of INMI episodes are not bothersome, while some cause disruption ranging from distraction to anxiety and distress. To date, little is known about how the majority of people react to INMI, in particular whether evaluation of the experience impacts on chosen response behaviours or if attempts at controlling INMI are successful or not. The present study classified 1046 reports of how people react to INMI episodes. Two laboratories in Finland and the UK conducted an identical qualitative analysis protocol on reports of INMI reactions and derived visual descriptive models of the outcomes using grounded theory techniques. Combined analysis carried out across the two studies confirmed that many INMI episodes were considered neutral or pleasant, with passive acceptance and enjoyment being among the most popular response behaviours. A significant number of people, however, reported on attempts to cope with unwanted INMI. The most popular and effective behaviours in response to INMI were seeking out the tune in question, and musical or verbal distraction. The outcomes of this study contribute to our understanding of the aetiology of INMI, in particular within the framework of memory theory, and present testable hypotheses for future research on successful INMI coping strategies. PMID:24497938

  10. Direct numerical simulation of turbulent, chemically reacting flows

    Science.gov (United States)

    Doom, Jeffrey Joseph

    This dissertation: (i) develops a novel numerical method for DNS/LES of compressible, turbulent reacting flows, (ii) performs several validation simulations, (iii) studies auto-ignition of a hydrogen vortex ring in air and (iv) studies a hydrogen/air turbulent diffusion flame. The numerical method is spatially non-dissipative, implicit and applicable over a range of Mach numbers. The compressible Navier-Stokes equations are rescaled so that the zero Mach number equations are discretely recovered in the limit of zero Mach number. The dependent variables are co--located in space, and thermodynamic variables are staggered from velocity in time. The algorithm discretely conserves kinetic energy in the incompressible, inviscid, non--reacting limit. The chemical source terms are implicit in time to allow for stiff chemical mechanisms. The algorithm is readily applicable to complex chemical mechanisms. Good results are obtained for validation simulations. The algorithm is used to study auto-ignition in laminar vortex rings. A nine species, nineteen reaction mechanism for H2/air combustion proposed by Mueller et al. [37] is used. Diluted H 2 at ambient temperature (300 K) is injected into hot air. The simulations study the effect of fuel/air ratio, oxidizer temperature, Lewis number and stroke ratio (ratio of piston stroke length to diameter). Results show that auto--ignition occurs in fuel lean, high temperature regions with low scalar dissipation at a 'most reactive' mixture fraction, zeta MR (Mastorakos et al. [32]). Subsequent evolution of the flame is not predicted by zetaMR; a most reactive temperature TMR is defined and shown to predict both the initial auto-ignition as well as subsequent evolution. For stroke ratios less than the formation number, ignition in general occurs behind the vortex ring and propagates into the core. At higher oxidizer temperatures, ignition is almost instantaneous and occurs along the entire interface between fuel and oxidizer. For stroke

  11. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    distribution of Mn substituting for Zn a 2+ state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2+ state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.

  12. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  13. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    International Nuclear Information System (INIS)

    Birner, Stefan

    2011-01-01

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano 3 software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano 3 software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model to recently

  14. Modeling of semiconductor nanostructures and semiconductor-electrolyte interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Birner, Stefan

    2011-11-15

    The main objective of Part I is to give an overview of some of the methods that have been implemented into the nextnano{sup 3} software. Examples are discussed that give insight into doping, strain and mobility. Applications of the single-band Schroedinger equation include three-dimensional superlattices, and a qubit that is manipulated by a magnetic field. Results of the multi-band k.p method are presented for HgTe-CdTe and InAs-GaSb superlattices, and for a SiGe-Si quantum cascade structure. Particular focus is put on a detailed description of the contact block reduction (CBR) method that has been developed within our research group. By means of this approach, quantum transport in the ballistic limit in one, two and three dimensions can be calculated. I provide a very detailed description of the algorithm and present several well documented examples that highlight the key points of this method. Calculating quantum transport in three dimensions is a very challenging task where computationally efficient algorithms - apart from the CBR method - are not available yet. Part II describes the methods that I have implemented into the nextnano{sup 3} software for calculating systems that consist of a combination of semiconductor materials and liquids. These biosensors have a solid-electrolyte interface, and the charges in the solid and in the electrolyte are coupled to each other through the Poisson-Boltzmann equation. I apply this model to a silicon based protein sensor, where I solve the Schroedinger equation together with the Poisson-Boltzmann equation self-consistently, and compare theoretical results with experiment. Furthermore, I have developed a novel approach to model the charge density profiles at semiconductor-electrolyte interfaces that allows us to distinguish hydrophobic and hydrophilic interfaces. Our approach extends previous work where ion specific potentials of mean force describe the distribution of ion species at the interface. I apply this new model

  15. How Did the Asian Stock Markets React to Bank Mergera after the 1997 Financial Crisis?

    OpenAIRE

    Meslier-Crouzille , Céline; Lepetit , Laetitia; Bautista , Carlos C.

    2008-01-01

    International audience; The objective of this paper is to empirically assess the stock market reaction to the announcement of bank mergers and acquisitions (M&As) in eight East Asian countries over the 1997-2003 period. M&As are classified according to the status of entity, the time period of the deal and the maturity of the banking system. A bivariate GARCH model is used to estimate abnormal returns taking beta conditional variability into account. We find that the market reacted negatively ...

  16. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  17. Reconfigurable engineered motile semiconductor microparticles.

    Science.gov (United States)

    Ohiri, Ugonna; Shields, C Wyatt; Han, Koohee; Tyler, Talmage; Velev, Orlin D; Jokerst, Nan

    2018-05-03

    Locally energized particles form the basis for emerging classes of active matter. The design of active particles has led to their controlled locomotion and assembly. The next generation of particles should demonstrate robust control over their active assembly, disassembly, and reconfiguration. Here we introduce a class of semiconductor microparticles that can be comprehensively designed (in size, shape, electric polarizability, and patterned coatings) using standard microfabrication tools. These custom silicon particles draw energy from external electric fields to actively propel, while interacting hydrodynamically, and sequentially assemble and disassemble on demand. We show that a number of electrokinetic effects, such as dielectrophoresis, induced charge electrophoresis, and diode propulsion, can selectively power the microparticle motions and interactions. The ability to achieve on-demand locomotion, tractable fluid flows, synchronized motility, and reversible assembly using engineered silicon microparticles may enable advanced applications that include remotely powered microsensors, artificial muscles, reconfigurable neural networks and computational systems.

  18. Magnetic susceptibility of semiconductor melts

    International Nuclear Information System (INIS)

    Kutvitskij, V.A.; Shurygin, P.M.

    1975-01-01

    The temperature dependences chi of various alloys confirm the existence of cluster formations in molten semiconductors, the stability of these formations in melts being considerably affected by the anion nature. The concentrational dependences of the magnetic susceptibility for all the investigated systems exhibit the diamagnetism maxima corresponding to the compound compositions. Heating the melt causes ''smearing'' the maxima, which is related with the cluster structure dissociation. The existence of the maxima concentrational dependence chi corresponding to BiTe and BiSe is found in the isotherms. The non-linear dependence of chi on the composition shows the absence of a single-valued relation between the phase diagram and the chi-diagram for melts

  19. Theory of Defects in Semiconductors

    CERN Document Server

    Drabold, David A

    2007-01-01

    Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

  20. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  1. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  2. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  3. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  4. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  5. Vorticity Dynamics in Single and Multiple Swirling Reacting Jets

    Science.gov (United States)

    Smith, Travis; Aguilar, Michael; Emerson, Benjamin; Noble, David; Lieuwen, Tim

    2015-11-01

    This presentation describes an analysis of the unsteady flow structures in two multinozzle swirling jet configurations. This work is motivated by the problem of combustion instabilities in premixed flames, a major concern in the development of modern low NOx combustors. The objective is to compare the unsteady flow structures in these two configurations for two separate geometries and determine how certain parameters, primarily distance between jets, influence the flow dynamics. The analysis aims to differentiate between the flow dynamics of single nozzle and triple nozzle configurations. This study looks at how the vorticity in the shear layers of one reacting swirling jet can affect the dynamics of a nearby similar jet. The distance between the swirling jets is found to have an effect on the flow field in determining where swirling jets merge and on the dynamics upstream of the merging location. Graduate Student, School of Aerospace Engineering, Georgia Institute of Technology, Atlanta, GA.

  6. Turbulent diffusion of chemically reacting flows: Theory and numerical simulations.

    Science.gov (United States)

    Elperin, T; Kleeorin, N; Liberman, M; Lipatnikov, A N; Rogachevskii, I; Yu, R

    2017-11-01

    The theory of turbulent diffusion of chemically reacting gaseous admixtures developed previously [T. Elperin et al., Phys. Rev. E 90, 053001 (2014)PLEEE81539-375510.1103/PhysRevE.90.053001] is generalized for large yet finite Reynolds numbers and the dependence of turbulent diffusion coefficient on two parameters, the Reynolds number and Damköhler number (which characterizes a ratio of turbulent and reaction time scales), is obtained. Three-dimensional direct numerical simulations (DNSs) of a finite-thickness reaction wave for the first-order chemical reactions propagating in forced, homogeneous, isotropic, and incompressible turbulence are performed to validate the theoretically predicted effect of chemical reactions on turbulent diffusion. It is shown that the obtained DNS results are in good agreement with the developed theory.

  7. REAC/TS Radiation Accident Registry: An Overview

    Energy Technology Data Exchange (ETDEWEB)

    Doran M. Christensen, DO, REAC/TS Associate Director and Staff Physician Becky Murdock, REAC/TS Registry and Health Physics Technician

    2012-12-12

    Over the past four years, REAC/TS has presented a number of case reports from its Radiation Accident Registry. Victims of radiological or nuclear incidents must meet certain dose criteria for an incident to be categorized as an “accident” and be included in the registry. Although the greatest numbers of “accidents” in the United States that have been entered into the registry involve radiation devices, the greater percentage of serious accidents have involved sealed sources of one kind or another. But if one looks at the kinds of accident scenarios that have resulted in extreme consequence, i.e., death, the greater share of deaths has occurred in medical settings.

  8. LES-ODT Simulations of Turbulent Reacting Shear Layers

    Science.gov (United States)

    Hoffie, Andreas; Echekki, Tarek

    2012-11-01

    Large-eddy simulations (LES) combined with the one-dimensional turbulence (ODT) simulations of a spatially developing turbulent reacting shear layer with heat release and high Reynolds numbers were conducted and compared to results from direct numerical simulations (DNS) of the same configuration. The LES-ODT approach is based on LES solutions for momentum on a coarse grid and solutions for momentum and reactive scalars on a fine ODT grid, which is embedded in the LES computational domain. The shear layer is simulated with a single-step, second-order reaction with an Arrhenius reaction rate. The transport equations are solved using a low Mach number approximation. The LES-ODT simulations yield reasonably accurate predictions of turbulence and passive/reactive scalars' statistics compared to DNS results.

  9. How preschoolers react to norm violations is associated with culture.

    Science.gov (United States)

    Gampe, Anja; Daum, Moritz M

    2018-01-01

    Children from the age of 3years understand social norms as such and enforce these norms in interactions with others. Differences in parental and institutional education across cultures make it likely that children receive divergent information about how to act in cases of norm violations. In the current study, we investigated whether cultural values are associated with the ways in which children react to norm violations. We tested 80 bicultural 3-year-olds with a norm enforcement paradigm and analyzed their reactions to norm violations. The reactions were correlated to the children's parental cultural values using the Global Leadership and Organizational Behavior Effectiveness (GLOBE) scales, and these results show that parental culture was associated with children's reactions to norm violations. The three strongest correlations were found for institutional collectivism, performance orientation, and assertiveness. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  11. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  12. Temperature control of power semiconductor devices in traction applications

    Science.gov (United States)

    Pugachev, A. A.; Strekalov, N. N.

    2017-02-01

    The peculiarity of thermal management of traction frequency converters of a railway rolling stock is highlighted. The topology and the operation principle of the automatic temperature control system of power semiconductor modules of the traction frequency converter are designed and discussed. The features of semiconductors as an object of temperature control are considered; the equivalent circuit of thermal processes in the semiconductors is suggested, the power losses in the two-level voltage source inverters are evaluated and analyzed. The dynamic properties and characteristics of the cooling fan induction motor electric drive with the scalar control are presented. The results of simulation in Matlab are shown for the steady state of thermal processes.

  13. Microscopic modeling of photoluminescence of strongly disordered semiconductors

    International Nuclear Information System (INIS)

    Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

    2007-01-01

    A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

  14. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  15. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  16. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  17. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  18. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  19. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  20. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  1. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  2. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  3. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  4. An experimental study on downstream of the transition of the chemically reacting liquid round free jet

    International Nuclear Information System (INIS)

    Hong, S.D.; Sugii, Y.; Okamoto, K.; Madarame, H.

    2002-01-01

    An experimental study was conducted on the chemically reacting liquid round free jet, Laser Induced Fluorescence (LIF) technique was adopted to evaluate the diffusion width of the jet into liquid streams. In the fluid engineering, it is very important to evaluate the characteristics of reacting jet for the safety of the nuclear reactor. In this study, the jet profile of downstream region far away from the transition point was evaluated, providing comparisons between reacting and non-reacting jet case. The concentration of the jet solution was varied from 0.01 mol/L to 0.5 mol/L in reacting cases. In the downstream far away from the transition point, the jet profiles between reacting cases and non-reacting cases were visualized quite different. It was concluded that the chemical reaction affects the momentum diffusion of the jet in the downstream region. (author)

  5. Electrons and Phonons in Semiconductor Multilayers

    Science.gov (United States)

    Ridley, B. K.

    1996-11-01

    This book provides a detailed description of the quantum confinement of electrons and phonons in semiconductor wells, superlattices and quantum wires, and shows how this affects their mutual interactions. It discusses the transition from microscopic to continuum models, emphasizing the use of quasi-continuum theory to describe the confinement of optical phonons and electrons. The hybridization of optical phonons and their interactions with electrons are treated, as are other electron scattering mechanisms. The book concludes with an account of the electron distribution function in three-, two- and one-dimensional systems, in the presence of electrical or optical excitation. This text will be of great use to graduate students and researchers investigating low-dimensional semiconductor structures, as well as to those developing new devices based on these systems.

  6. Semirelativity in semiconductors: a review.

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-20

    in crossed electric and magnetic fields are described theoretically and experimentally. It is only the two-band description for NGS, equivalent to the Dirac or Klein-Gordon equations for free particles, that gives a correct account of experimental results in this situation. A transverse Doppler shift in the cyclotron resonance observed in crossed fields in InSb indicates that there exists a time dilatation between an oscillating electron and an observer. The phenomenon of Zitterbewegung (ZB, trembling motion) for electrons in NGS is considered theoretically, following the original proposition of Schrödinger for free relativistic electrons in vacuum. The two descriptions are in close analogy, but the frequency of ZB for electrons in NGS is orders of magnitude lower and its amplitude orders of magnitude higher making possible experimental observations in semiconductors considerably more favorable. Finally, graphene and carbon nanotubes, as well as topological insulators are considered in the framework of relativistic analogy. These systems, with their linear energy-quasimomentum dispersions, illustrate the extreme semirelativistic regime. Experimental results for the energy dispersions and the Landau quantizations in the presence of a magnetic field are quoted and their analogy to the behavior of free relativistic electrons is discussed. Approximations and restrictions of the relativistic analogy are emphasized. On the other hand, it is indicated that in various situations it is considerably easier to observe semirelativistic effects in semiconductors than the relativistic effects in vacuum.

  7. Semirelativity in semiconductors: a review

    Science.gov (United States)

    Zawadzki, Wlodek

    2017-09-01

    energy. This conclusion is confirmed experimentally for NGS. Electrons in crossed electric and magnetic fields are described theoretically and experimentally. It is only the two-band description for NGS, equivalent to the Dirac or Klein-Gordon equations for free particles, that gives a correct account of experimental results in this situation. A transverse Doppler shift in the cyclotron resonance observed in crossed fields in InSb indicates that there exists a time dilatation between an oscillating electron and an observer. The phenomenon of Zitterbewegung (ZB, trembling motion) for electrons in NGS is considered theoretically, following the original proposition of Schrödinger for free relativistic electrons in vacuum. The two descriptions are in close analogy, but the frequency of ZB for electrons in NGS is orders of magnitude lower and its amplitude orders of magnitude higher making possible experimental observations in semiconductors considerably more favorable. Finally, graphene and carbon nanotubes, as well as topological insulators are considered in the framework of relativistic analogy. These systems, with their linear energy-quasimomentum dispersions, illustrate the extreme semirelativistic regime. Experimental results for the energy dispersions and the Landau quantizations in the presence of a magnetic field are quoted and their analogy to the behavior of free relativistic electrons is discussed. Approximations and restrictions of the relativistic analogy are emphasized. On the other hand, it is indicated that in various situations it is considerably easier to observe semirelativistic effects in semiconductors than the relativistic effects in vacuum.

  8. Large eddy simulation and direct numerical simulation of high speed turbulent reacting flows

    Science.gov (United States)

    Adumitroaie, V.; Frankel, S. H.; Madnia, C. K.; Givi, P.

    The objective of this research is to make use of Large Eddy Simulation (LES) and Direct Numerical Simulation (DNS) for the computational analyses of high speed reacting flows. Our efforts in the first phase of this research conducted within the past three years have been directed in several issues pertaining to intricate physics of turbulent reacting flows. In our previous 5 semi-annual reports submitted to NASA LaRC, as well as several technical papers in archival journals, the results of our investigations have been fully described. In this progress report which is different in format as compared to our previous documents, we focus only on the issue of LES. The reason for doing so is that LES is the primary issue of interest to our Technical Monitor and that our other findings were needed to support the activities conducted under this prime issue. The outcomes of our related investigations, nevertheless, are included in the appendices accompanying this report. The relevance of the materials in these appendices are, therefore, discussed only briefly within the body of the report. Here, results are presented of a priori and a posterior analyses for validity assessments of assumed Probability Density Function (PDF) methods as potential subgrid scale (SGS) closures for LES of turbulent reacting flows. Simple non-premixed reacting systems involving an isothermal reaction of the type A + B yields Products under both chemical equilibrium and non-equilibrium conditions are considered. A priori analyses are conducted of a homogeneous box flow, and a spatially developing planar mixing layer to investigate the performance of the Pearson Family of PDF's as SGS models. A posteriori analyses are conducted of the mixing layer using a hybrid one-equation Smagorinsky/PDF SGS closure. The Smagorinsky closure augmented by the solution of the subgrid turbulent kinetic energy (TKE) equation is employed to account for hydrodynamic fluctuations, and the PDF is employed for modeling the

  9. Recent advances in ultrafast-laser-based spectroscopy and imaging for reacting plasmas and flames

    Science.gov (United States)

    Patnaik, Anil K.; Adamovich, Igor; Gord, James R.; Roy, Sukesh

    2017-10-01

    Reacting flows and plasmas are prevalent in a wide array of systems involving defense, commercial, space, energy, medical, and consumer products. Understanding the complex physical and chemical processes involving reacting flows and plasmas requires measurements of key parameters, such as temperature, pressure, electric field, velocity, and number densities of chemical species. Time-resolved measurements of key chemical species and temperature are required to determine kinetics related to the chemical reactions and transient phenomena. Laser-based, noninvasive linear and nonlinear spectroscopic approaches have proved to be very valuable in providing key insights into the physico-chemical processes governing reacting flows and plasmas as well as validating numerical models. The advent of kilohertz rate amplified femtosecond lasers has expanded the multidimensional imaging of key atomic species such as H, O, and N in a significant way, providing unprecedented insight into preferential diffusion and production of these species under chemical reactions or electric-field driven processes. These lasers not only provide 2D imaging of chemical species but have the ability to perform measurements free of various interferences. Moreover, these lasers allow 1D and 2D temperature-field measurements, which were quite unimaginable only a few years ago. The rapid growth of the ultrafast-laser-based spectroscopic measurements has been fueled by the need to achieve the following when measurements are performed in reacting flows and plasmas. They are: (1) interference-free measurements (collision broadening, photolytic dissociation, Stark broadening, etc), (2) time-resolved single-shot measurements at a rate of 1-10 kHz, (3) spatially-resolved measurements, (4) higher dimensionality (line, planar, or volumetric), and (5) simultaneous detection of multiple species. The overarching goal of this article is to review the current state-of-the-art ultrafast-laser-based spectroscopic

  10. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  11. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  12. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  13. Nonlinear Stability and Structure of Compressible Reacting Mixing Layers

    Science.gov (United States)

    Day, M. J.; Mansour, N. N.; Reynolds, W. C.

    2000-01-01

    The parabolized stability equations (PSE) are used to investigate issues of nonlinear flow development and mixing in compressible reacting shear layers. Particular interest is placed on investigating the change in flow structure that occurs when compressibility and heat release are added to the flow. These conditions allow the 'outer' instability modes- one associated with each of the fast and slow streams-to dominate over the 'central', Kelvin-Helmholtz mode that unaccompanied in incompressible nonreacting mixing layers. Analysis of scalar probability density functions in flows with dominant outer modes demonstrates the ineffective, one-sided nature of mixing that accompany these flow structures. Colayer conditions, where two modes have equal growth rate and the mixing layer is formed by two sets of vortices, offer some opportunity for mixing enhancement. Their extent, however, is found to be limited in the mixing layer's parameter space. Extensive validation of the PSE technique also provides a unique perspective on central- mode vortex pairing, further supporting the view that pairing is primarily governed perspective sheds insight on how linear stability theory is able to provide such an accurate prediction of experimentally-observed, fully nonlinear flow phenomenon.

  14. CERN reacts to increased costs to completion of the LHC

    CERN Multimedia

    2002-01-01

    Aspects of LHC construction. The CERN Council, where the representatives of the 20 Member States of the Organization decide on scientific programmes and financial resources, held its 120th session on 14 December under the chairmanship of Prof. Maurice Bourquin (CH). CERN adjusts to the LHC Director-General, Luciano Maiani, stressed that CERN was now fully engaged in the LHC and outlined the first moves to react to the increased cost to completion of the LHC. The new accelerator is an extremely complex, high-tech project which CERN is building under very severe conditions. However, the technical challenges are solved and industrial production of accelerator elements, and installation are starting. Professor Maiani said that 2001 had been a very hard but decisive year for CERN. An important milestone had been passed during this meeting with the approval of the LHC dipole magnets contract, the last major contract for the accelerator. The new costs to completion of the LHC project are now clear. A first propos...

  15. The chilling effect: how do researchers react to controversy?

    Directory of Open Access Journals (Sweden)

    Joanna Kempner

    2008-11-01

    Full Text Available BACKGROUND: Can political controversy have a "chilling effect" on the production of new science? This is a timely concern, given how often American politicians are accused of undermining science for political purposes. Yet little is known about how scientists react to these kinds of controversies. METHODS AND FINDINGS: Drawing on interview (n = 30 and survey data (n = 82, this study examines the reactions of scientists whose National Institutes of Health (NIH-funded grants were implicated in a highly publicized political controversy. Critics charged that these grants were "a waste of taxpayer money." The NIH defended each grant and no funding was rescinded. Nevertheless, this study finds that many of the scientists whose grants were criticized now engage in self-censorship. About half of the sample said that they now remove potentially controversial words from their grant and a quarter reported eliminating entire topics from their research agendas. Four researchers reportedly chose to move into more secure positions entirely, either outside academia or in jobs that guaranteed salaries. About 10% of the group reported that this controversy strengthened their commitment to complete their research and disseminate it widely. CONCLUSIONS: These findings provide evidence that political controversies can shape what scientists choose to study. Debates about the politics of science usually focus on the direct suppression, distortion, and manipulation of scientific results. This study suggests that scholars must also examine how scientists may self-censor in response to political events.

  16. The Chilling Effect: How Do Researchers React to Controversy?

    Science.gov (United States)

    Kempner, Joanna

    2008-01-01

    Background Can political controversy have a “chilling effect” on the production of new science? This is a timely concern, given how often American politicians are accused of undermining science for political purposes. Yet little is known about how scientists react to these kinds of controversies. Methods and Findings Drawing on interview (n = 30) and survey data (n = 82), this study examines the reactions of scientists whose National Institutes of Health (NIH)-funded grants were implicated in a highly publicized political controversy. Critics charged that these grants were “a waste of taxpayer money.” The NIH defended each grant and no funding was rescinded. Nevertheless, this study finds that many of the scientists whose grants were criticized now engage in self-censorship. About half of the sample said that they now remove potentially controversial words from their grant and a quarter reported eliminating entire topics from their research agendas. Four researchers reportedly chose to move into more secure positions entirely, either outside academia or in jobs that guaranteed salaries. About 10% of the group reported that this controversy strengthened their commitment to complete their research and disseminate it widely. Conclusions These findings provide evidence that political controversies can shape what scientists choose to study. Debates about the politics of science usually focus on the direct suppression, distortion, and manipulation of scientific results. This study suggests that scholars must also examine how scientists may self-censor in response to political events. PMID:19018657

  17. Assembly, Structure, and Functionality of Metal-Organic Networks and Organic Semiconductor Layers at Surfaces

    Science.gov (United States)

    Tempas, Christopher D.

    Self-assembled nanostructures at surfaces show promise for the development of next generation technologies including organic electronic devices and heterogeneous catalysis. In many cases, the functionality of these nanostructures is not well understood. This thesis presents strategies for the structural design of new on-surface metal-organic networks and probes their chemical reactivity. It is shown that creating uniform metal sites greatly increases selectivity when compared to ligand-free metal islands. When O2 reacts with single-site vanadium centers, in redox-active self-assembled coordination networks on the Au(100) surface, it forms one product. When O2 reacts with vanadium metal islands on the same surface, multiple products are formed. Other metal-organic networks described in this thesis include a mixed valence network containing Pt0 and PtII and a network where two Fe centers reside in close proximity. This structure is stable to temperatures >450 °C. These new on-surface assemblies may offer the ability to perform reactions of increasing complexity as future heterogeneous catalysts. The functionalization of organic semiconductor molecules is also shown. When a few molecular layers are grown on the surface, it is seen that the addition of functional groups changes both the film's structure and charge transport properties. This is due to changes in both first layer packing structure and the pi-electron distribution in the functionalized molecules compared to the original molecule. The systems described in this thesis were studied using high-resolution scanning tunneling microscopy, non-contact atomic force microscopy, and X-ray photoelectron spectroscopy. Overall, this work provides strategies for the creation of new, well-defined on-surface nanostructures and adds additional chemical insight into their properties.

  18. Spin Transport in Semiconductor heterostructures

    International Nuclear Information System (INIS)

    Marinescu, Domnita Catalina

    2011-01-01

    The focus of the research performed under this grant has been the investigation of spin transport in magnetic semiconductor heterostructures. The interest in these systems is motivated both by their intriguing physical properties, as the physical embodiment of a spin-polarized Fermi liquid, as well as by their potential applications as spintronics devices. In our work we have analyzed several different problems that affect the spin dynamics in single and bi-layer spin-polarized two-dimensional (2D) systems. The topics of interests ranged from the fundamental aspects of the electron-electron interactions, to collective spin and charge density excitations and spin transport in the presence of the spin-orbit coupling. The common denominator of these subjects is the impact at the macroscopic scale of the spin-dependent electron-electron interaction, which plays a much more subtle role than in unpolarized electron systems. Our calculations of several measurable parameters, such as the excitation frequencies of magneto-plasma modes, the spin mass, and the spin transresistivity, propose realistic theoretical estimates of the opposite-spin many-body effects, in particular opposite-spin correlations, that can be directly connected with experimental measurements.

  19. A Finite Element Theory for Predicting the Attenuation of Extended-Reacting Liners

    Science.gov (United States)

    Watson, W. R.; Jones, M. G.

    2009-01-01

    A non-modal finite element theory for predicting the attenuation of an extended-reacting liner containing a porous facesheet and located in a no-flow duct is presented. The mathematical approach is to solve separate wave equations in the liner and duct airway and to couple these two solutions by invoking kinematic constraints at the facesheet that are consistent with a continuum theory of fluid motion. Given the liner intrinsic properties, a weak Galerkin finite element formulation with cubic polynomial basis functions is used as the basis for generating a discrete system of acoustic equations that are solved to obtain the coupled acoustic field. A state-of-the-art, asymmetric, parallel, sparse equation solver is implemented that allows tens of thousands of grid points to be analyzed. A grid refinement study is presented to show that the predicted attenuation converges. Excellent comparison of the numerically predicted attenuation to that of a mode theory (using a Haynes 25 metal foam liner) is used to validate the computational approach. Simulations are also presented for fifteen porous plate, extended-reacting liners. The construction of some of the porous plate liners suggest that they should behave as resonant liners while the construction of others suggest that they should behave as broadband attenuators. In each case the finite element theory is observed to predict the proper attenuation trend.

  20. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  1. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  2. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  3. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  4. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  5. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  6. Linear models for sound from supersonic reacting mixing layers

    Science.gov (United States)

    Chary, P. Shivakanth; Samanta, Arnab

    2016-12-01

    We perform a linearized reduced-order modeling of the aeroacoustic sound sources in supersonic reacting mixing layers to explore their sensitivities to some of the flow parameters in radiating sound. Specifically, we investigate the role of outer modes as the effective flow compressibility is raised, when some of these are expected to dominate over the traditional Kelvin-Helmholtz (K-H) -type central mode. Although the outer modes are known to be of lesser importance in the near-field mixing, how these radiate to the far-field is uncertain, on which we focus. On keeping the flow compressibility fixed, the outer modes are realized via biasing the respective mean densities of the fast (oxidizer) or slow (fuel) side. Here the mean flows are laminar solutions of two-dimensional compressible boundary layers with an imposed composite (turbulent) spreading rate, which we show to significantly alter the growth of instability waves by saturating them earlier, similar to in nonlinear calculations, achieved here via solving the linear parabolized stability equations. As the flow parameters are varied, instability of the slow modes is shown to be more sensitive to heat release, potentially exceeding equivalent central modes, as these modes yield relatively compact sound sources with lesser spreading of the mixing layer, when compared to the corresponding fast modes. In contrast, the radiated sound seems to be relatively unaffected when the mixture equivalence ratio is varied, except for a lean mixture which is shown to yield a pronounced effect on the slow mode radiation by reducing its modal growth.

  7. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  8. Megavolt nanosecond generator with semiconductor current breaker

    CERN Document Server

    Bushlyakov, A I; Rukin, S N; Slovikovskij, B G; Timoshenkov, S P

    2002-01-01

    The heavy-current nanosecond generator with the pulse capacity up to 1.6 GW and output voltage of 0.5-1 MW is described. The generator contains four capacity storages, one induction storage and six solid body commutators: one thyristor, four magnetic commutators and a semiconductor current breaker on the SOS-diodes. The results of studies on the energy change-over efficiency through a semiconductor breaker by various external resistance loads as well as the results of the thermal and frequency tests are presented. It is established that selection of the optimal cooling system provides for the generator continuous mode of operation with the pulse sequence frequency from 300 Hz up to 850 Hz

  9. Optical cavity furnace for semiconductor wafer processing

    Science.gov (United States)

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  10. Anomalous normal mode oscillations in semiconductor microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Wang, H. [Univ. of Oregon, Eugene, OR (United States). Dept. of Physics; Hou, H.Q.; Hammons, B.E. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Semiconductor microcavities as a composite exciton-cavity system can be characterized by two normal modes. Under an impulsive excitation by a short laser pulse, optical polarizations associated with the two normal modes have a {pi} phase difference. The total induced optical polarization is then expected to exhibit a sin{sup 2}({Omega}t)-like oscillation where 2{Omega} is the normal mode splitting, reflecting a coherent energy exchange between the exciton and cavity. In this paper the authors present experimental studies of normal mode oscillations using three-pulse transient four wave mixing (FWM). The result reveals surprisingly that when the cavity is tuned far below the exciton resonance, normal mode oscillation in the polarization is cos{sup 2}({Omega}t)-like, in contrast to what is expected form the simple normal mode model. This anomalous normal mode oscillation reflects the important role of virtual excitation of electronic states in semiconductor microcavities.

  11. ENVIRONMENT: a computational platform to stochastically simulate reacting and self-reproducing lipid compartments

    Science.gov (United States)

    Mavelli, Fabio; Ruiz-Mirazo, Kepa

    2010-09-01

    'ENVIRONMENT' is a computational platform that has been developed in the last few years with the aim to simulate stochastically the dynamics and stability of chemically reacting protocellular systems. Here we present and describe some of its main features, showing how the stochastic kinetics approach can be applied to study the time evolution of reaction networks in heterogeneous conditions, particularly when supramolecular lipid structures (micelles, vesicles, etc) coexist with aqueous domains. These conditions are of special relevance to understand the origins of cellular, self-reproducing compartments, in the context of prebiotic chemistry and evolution. We contrast our simulation results with real lab experiments, with the aim to bring together theoretical and experimental research on protocell and minimal artificial cell systems.

  12. Longitudinally Vibrating Elastic Rods with Locally and Non-Locally Reacting Viscous Dampers

    Directory of Open Access Journals (Sweden)

    Şefaatdin Yüksel

    2005-01-01

    Full Text Available Eigencharacteristics of a longitudinally vibrating elastic rod with locally and non-locally reacting damping are analyzed. The rod is considered as a continuous system and complex eigenfrequencies are determined as solution of a characteristic equation. The variation of the damping ratios with respect to damper locations and damping coefficients for the first four eigenfrequencies are obtained. It is shown that at any mode of locally or non-locally damped elastic rod, the variation of damping ratio with damper location is linearly proportional to absolute value of the mode shape of undamped system. It is seen that the increasing damping coefficient does not always increase the damping ratio and there are optimal values for the damping ratio. Optimal values for external damping coefficients of viscous dampers and locations of the dampers are presented.

  13. Computational Investigation of Soot and Radiation in Turbulent Reacting Flows

    Science.gov (United States)

    Lalit, Harshad

    This study delves into computational modeling of soot and infrared radiation for turbulent reacting flows, detailed understanding of both of which is paramount in the design of cleaner engines and pollution control. In the first part of the study, the concept of Stochastic Time and Space Series Analysis (STASS) as a numerical tool to compute time dependent statistics of radiation intensity is introduced for a turbulent premixed flame. In the absence of high fidelity codes for large eddy simulation or direct numerical simulation of turbulent flames, the utility of STASS for radiation imaging of reacting flows to understand the flame structure is assessed by generating images of infrared radiation in spectral bands dominated by radiation from gas phase carbon dioxide and water vapor using an assumed PDF method. The study elucidates the need for time dependent computation of radiation intensity for validation with experiments and the need for accounting for turbulence radiation interactions for correctly predicting radiation intensity and consequently the flame temperature and NOx in a reacting fluid flow. Comparison of single point statistics of infrared radiation intensity with measurements show that STASS can not only predict the flame structure but also estimate the dynamics of thermochemical scalars in the flame with reasonable accuracy. While a time series is used to generate realizations of thermochemical scalars in the first part of the study, in the second part, instantaneous realizations of resolved scale temperature, CO2 and H2O mole fractions and soot volume fractions are extracted from a large eddy simulation (LES) to carry out quantitative imaging of radiation intensity (QIRI) for a turbulent soot generating ethylene diffusion flame. A primary motivation of the study is to establish QIRI as a computational tool for validation of soot models, especially in the absence of conventional flow field and measured scalar data for sooting flames. Realizations of

  14. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  15. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  16. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  17. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  18. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  19. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  20. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  1. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  2. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  3. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  4. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  5. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  6. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  7. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  8. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  9. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  10. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  11. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  12. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  13. Electronic Properties of Metallic Nanoclusters on Semiconductor Surfaces: Implications for Nanoelectronic Device Applications

    International Nuclear Information System (INIS)

    Lee, Takhee; Liu Jia; Chen, N.-P.; Andres, R.P.; Janes, D.B.; Reifenberger, R.

    2000-01-01

    We review current research on the electronic properties of nanoscale metallic islands and clusters deposited on semiconductor substrates. Reported results for a number of nanoscale metal-semiconductor systems are summarized in terms of their fabrication and characterization. In addition to the issues faced in large-area metal-semiconductor systems, nano-systems present unique challenges in both the realization of well-controlled interfaces at the nanoscale and the ability to adequately characterize their electrical properties. Imaging by scanning tunneling microscopy as well as electrical characterization by current-voltage spectroscopy enable the study of the electrical properties of nanoclusters/semiconductor systems at the nanoscale. As an example of the low-resistance interfaces that can be realized, low-resistance nanocontacts consisting of metal nanoclusters deposited on specially designed ohmic contact structures are described. To illustrate a possible path to employing metal/semiconductor nanostructures in nanoelectronic applications, we also describe the fabrication and performance of uniform 2-D arrays of such metallic clusters on semiconductor substrates. Using self-assembly techniques involving conjugated organic tether molecules, arrays of nanoclusters have been formed in both unpatterned and patterned regions on semiconductor surfaces. Imaging and electrical characterization via scanning tunneling microscopy/spectroscopy indicate that high quality local ordering has been achieved within the arrays and that the clusters are electronically coupled to the semiconductor substrate via the low-resistance metal/semiconductor interface

  14. Nanopatterned organic semiconductors for visible light communications

    Science.gov (United States)

    Yang, Xilu; Dong, Yurong; Zeng, Pan; Yu, Yan; Xie, Yujun; Gong, Junyi; Shi, Meng; Liang, Rongqing; Ou, Qiongrong; Chi, Nan; Zhang, Shuyu

    2018-03-01

    Visible light communication (VLC) is becoming an important and promising supplement to the existing Wi-Fi network for the coming 5G communications. Organic light-emitting semiconductors present much fast fluorescent decay rates compared to those of conventional colour-converting phosphors, therefore capable of achieving much higher bandwidths. Here we explore how nanopatterned organic semiconductors can further enhance the data rates of VLC links by improving bandwidths and signal-to-noise ratios (SNRs) and by supporting spatial multiplexing. We first demonstrate a colour-converting VLC system based on nanopatterned hyperbolic metamaterials (HMM), the bandwidth of which is enhanced by 50%. With regard to enhancing SNRs, we achieve a tripling of optical gain by integrating a nanopatterned luminescent concentrator to a signal receiver. In addition, we demonstrate highly directional fluorescent VLC antennas based on nanoimprinted polymer films, paving the way to achieving parallel VLC communications via spatialmultiplexing. These results indicate nanopatterned organic semiconductors provide a promising route to high speed VLC links.

  15. Electronic structure and lattice properties of metastable III-(N,V) semiconductor systems; Elektronische Struktur und Kristallgittereigenschaften von metastabilen III-(N,V)-Halbleitersystemen

    Energy Technology Data Exchange (ETDEWEB)

    Guengerich, M.

    2007-12-18

    This thesis gives an overview of these influences for Ga-V semiconductors (V=P,As,Sb). Lattice vibrations of the ternary alloys Ga(N,P), Ga(N,As) und Ga(N,Sb) are studied and analyzed with respect to the local binding of the N atoms in the host lattices. For the first time, pressure coefficients of the extended host phonons as well as of the N local vibrational modes in Ga(N,As) und Ga(N,P) are determined by Raman spectroscopy under hydrostatic pressure. The relationship between the force constant of the Ga-N bond and the bond length is determined. A central aspect of the thesis is the concentration dependence of optical transitions in Ga(N,P) and Ga(N,As), studied by spectroscopic methods. The impurity levels in both materials are determined by the spatial statistics of the N atoms. (orig.)

  16. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    Science.gov (United States)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  17. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications.

    Science.gov (United States)

    Wen, Lin; Qiu, Liping; Wu, Yongxiang; Hu, Xiaoxiao; Zhang, Xiaobing

    2017-07-28

    Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  18. Aptamer-Modified Semiconductor Quantum Dots for Biosensing Applications

    Directory of Open Access Journals (Sweden)

    Lin Wen

    2017-07-01

    Full Text Available Semiconductor quantum dots have attracted extensive interest in the biosensing area because of their properties, such as narrow and symmetric emission with tunable colors, high quantum yield, high stability and controllable morphology. The introduction of various reactive functional groups on the surface of semiconductor quantum dots allows one to conjugate a spectrum of ligands, antibodies, peptides, or nucleic acids for broader and smarter applications. Among these ligands, aptamers exhibit many advantages including small size, high chemical stability, simple synthesis with high batch-to-batch consistency and convenient modification. More importantly, it is easy to introduce nucleic acid amplification strategies and/or nanomaterials to improve the sensitivity of aptamer-based sensing systems. Therefore, the combination of semiconductor quantum dots and aptamers brings more opportunities in bioanalysis. Here we summarize recent advances on aptamer-functionalized semiconductor quantum dots in biosensing applications. Firstly, we discuss the properties and structure of semiconductor quantum dots and aptamers. Then, the applications of biosensors based on aptamer-modified semiconductor quantum dots by different signal transducing mechanisms, including optical, electrochemical and electrogenerated chemiluminescence approaches, is discussed. Finally, our perspectives on the challenges and opportunities in this promising field are provided.

  19. Development of a Reduced-Order Model for Reacting Gas-Solids Flow using Proper Orthogonal Decomposition

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Dwayne [Florida International Univ., Miami, FL (United States); Dulikravich, George [Florida International Univ., Miami, FL (United States); Cizmas, Paul [Florida International Univ., Miami, FL (United States)

    2017-11-27

    This report summarizes the objectives, tasks and accomplishments made during the three year duration of this research project. The report presents the results obtained by applying advanced computational techniques to develop reduced-order models (ROMs) in the case of reacting multiphase flows based on high fidelity numerical simulation of gas-solids flow structures in risers and vertical columns obtained by the Multiphase Flow with Interphase eXchanges (MFIX) software. The research includes a numerical investigation of reacting and non-reacting gas-solids flow systems and computational analysis that will involve model development to accelerate the scale-up process for the design of fluidization systems by providing accurate solutions that match the full-scale models. The computational work contributes to the development of a methodology for obtaining ROMs that is applicable to the system of gas-solid flows. Finally, the validity of the developed ROMs is evaluated by comparing the results against those obtained using the MFIX code. Additionally, the robustness of existing POD-based ROMs for multiphase flows is improved by avoiding non-physical solutions of the gas void fraction and ensuring that the reduced kinetics models used for reactive flows in fluidized beds are thermodynamically consistent.

  20. Novel routes to nanodispersed semiconductors

    International Nuclear Information System (INIS)

    Green, M.A.

    1999-01-01

    Novel synthetic routes to nanodispersed compound semiconductors using organometallic precursors have been developed. The quantum dots have been studied by optical absorption spectroscopy, photoluminescence spectroscopy, transmission electron microscopy, high resolution transmission electron microscopy, infra red spectroscopy and nuclear magnetic resonance. Polar Lewis base solvents such as tri-n-octylphosphine oxide and 4-ethylpyridine were utilized as both passivating agent and dispersing medium. In the the search for new solvent systems and passivating agents, and investigation was also made into the use of dimethyl sulfoxide as a reaction solvent and capping agent in the preparation of nanocrystalline CdS. Existing routes using metal alkyls and silylated precursors in hot TOPO were improved by substituting the metal alkyl with an metal alkyl adduct. Cadmium monothiocarbamate and a related precursor, cadmium thioacetate were investigated as possible single source precursors to nanometer sized CdS. The thermolysis of diorganophosphides in the Lewis bases coordinating solvent (4-ethylpridine) has been investigated, including studies of decompositon mechanisms, and quantum dots of Cd 3 P 2 , Zn 3 P 2 , Inp and GaP have been prepared. The synthesis of InAs using the metal chloride and an aminoarsenide precursor in 4-ethylpridine has also been developed. A simple method for the organization of III-V materials into glass like aggregates has been described. (author)

  1. Self Organization in Compensated Semiconductors

    Science.gov (United States)

    Berezin, Alexander A.

    2004-03-01

    In partially compensated semiconductor (PCS) Fermi level is pinned to donor sub-band. Due to positional randomness and almost isoenergetic hoppings, donor-spanned electronic subsystem in PCS forms fluid-like highly mobile collective state. This makes PCS playground for pattern formation, self-organization, complexity emergence, electronic neural networks, and perhaps even for origins of life, bioevolution and consciousness. Through effects of impact and/or Auger ionization of donor sites, whole PCS may collapse (spinodal decomposition) into microblocks potentially capable of replication and protobiological activity (DNA analogue). Electronic screening effects may act in RNA fashion by introducing additional length scale(s) to system. Spontaneous quantum computing on charged/neutral sites becomes potential generator of informationally loaded microstructures akin to "Carl Sagan Effect" (hidden messages in Pi in his "Contact") or informational self-organization of "Library of Babel" of J.L. Borges. Even general relativity effects at Planck scale (R.Penrose) may affect the dynamics through (e.g.) isotopic variations of atomic mass and local density (A.A.Berezin, 1992). Thus, PCS can serve as toy model (experimental and computational) at interface of physics and life sciences.

  2. Photoemission studies of semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Hamad, K.S.; Roth, R.; Alivisatos, A.P.

    1997-01-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface

  3. Performance of coils wound from long lengths of surface-coated, reacted, BSCCO-2212 conductor

    Energy Technology Data Exchange (ETDEWEB)

    Walker, M.S.; Hazelton, D.W.; Gardner, M.T. [Intermagnetics General Corp., Latham, NY (United States)] [and others

    1996-10-01

    React-before-wind surface-coated BSCCO-2212 is being established as a relatively low cost HTS conductor for practical applications. Quality tape is presently being manufactured in 450-500m lengths at a cost estimated to be 1/3-1/5 of the industry costs of BSCCO-2223 powder-in-tube tape. Robust, mechanically sound coils for applications ranging from NMR insert magnets to transformer windings are being made from this BSCCO-2212 tape. The coils have performed consistently through test and thermal cycling without degradation and as projected from short sample measurements. A hybrid approach, which uses mainly BSCCO- 2212 augmented by BSCCO-2223 conductor in the high radial field end regions, is expected to halve magnet system costs.

  4. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  5. Fiscal 1974 Sunshine Project result report. R and D on photovoltaic power generation system (R and D on 2-6 group compound semiconductor solar cells); 1974 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. 2-6 zoku kagobutsu handotai taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1975-05-31

    This report summarizes the fiscal 1974 research result on 2- 6 group compound semiconductor solar cells. To obtain a probability of the technology for producing photovoltaic power generation systems at a cost less than 1/100 of those by current technology, this research aims at establishment of the pollution-free production technology of the titled solar cells, and development of an innovative photovoltaic power generation system using such solar cells. The research is composed of (1) study on deterioration mechanism, (2) measures against pollution, and (3) basic study on the production system of such semiconductors. In the 1st research, the analysis result showed that deterioration under solar radiation or by short circuit is derived from an increase in resistance around a positive electrode and a decrease around a junction caused by change in Cu{sub 2}S composition due to migration of Cu ions in a Cu{sub 2}S layer by photo current. In the 2nd research, study was made on preventive technology of Cd pollution. In the 3rd research, basic study was made on the production systems of semiconductors such as sintering, chemical separating and vapor-phase growth for cost reduction. (NEDO)

  6. Semiconductor-to-metallic flipping in a ZnFe{sub 2}O{sub 4}–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ameer, Shahid, E-mail: shahidameer@scme.nust.edu.pk [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Gul, Iftikhar Hussain [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Mahmood, Nasir [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Mujahid, Muhammad [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan)

    2015-01-15

    Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior.

  7. ReACT!: An Interactive Educational Tool for AI Planning for Robotics

    Science.gov (United States)

    Dogmus, Zeynep; Erdem, Esra; Patogulu, Volkan

    2015-01-01

    This paper presents ReAct!, an interactive educational tool for artificial intelligence (AI) planning for robotics. ReAct! enables students to describe robots' actions and change in dynamic domains without first having to know about the syntactic and semantic details of the underlying formalism, and to solve planning problems using…

  8. Improving Resilience to Emergencies through Advanced Cyber Technologies: the I-REACT project

    Directory of Open Access Journals (Sweden)

    Claudia Maltoni

    2017-08-01

    be equipped with essential tools for early warning and response. At the same time, private companies could leverage specific set of I-REACT components to improve their business, when linked to disaster management. Overall, I-REACT aims to be a European-wide contribution to build more secure and resilient societies to disasters.

  9. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  10. Nonlinear Spatio-Temporal Dynamics and Chaos in Semiconductors

    Science.gov (United States)

    Schöll, Eckehard

    2005-08-01

    Nonlinear transport phenomena are an increasingly important aspect of modern semiconductor research. This volume deals with complex nonlinear dynamics, pattern formation, and chaotic behavior in such systems. It bridges the gap between two well-established fields: the theory of dynamic systems and nonlinear charge transport in semiconductors. This unified approach helps reveal important electronic transport instabilities. The initial chapters lay a general framework for the theoretical description of nonlinear self-organized spatio-temporal patterns, such as current filaments, field domains, fronts, and analysis of their stability. Later chapters consider important model systems in detail: impact ionization induced impurity breakdown, Hall instabilities, superlattices, and low-dimensional structures. State-of-the-art results include chaos control, spatio-temporal chaos, multistability, pattern selection, activator-inhibitor kinetics, and global coupling, linking fundamental issues to electronic device applications. This book will be of great value to semiconductor physicists and nonlinear scientists alike.

  11. Evaluation of efficiency of a semiconductor gamma camera

    CERN Document Server

    Otake, H; Takeuchi, Y

    2002-01-01

    We evaluation basic characteristics of a compact type semiconductor gamma camera (eZ-SCOPE AN) of Cadmium Zinc Telluride (CdZnTe). This new compact gamma camera has 256 semiconductors representing the same number of pixels. Each semiconductor is 2 mm square and is located in 16 lines and rows on the surface of the detector. The specific performance characteristics were evaluated in the study referring to National Electrical Manufactures Association (NEMA) standards; intrinsic energy resolution, intrinsic count rate performance, integral uniformity, system planar sensitivity, system spatial resolution, and noise to the neighboring pixels. The intrinsic energy resolution measured 5.7% as full width half maximum (FWHM). The intrinsic count rate performance ranging from 17 kcps to 1,285 kcps was evaluated, but the highest intrinsic count rate was not observed. Twenty percents count loss was recognized at 1,021 kcps. The integral uniformity was 1.3% with high sensitivity collimator. The system planar sensitivity w...

  12. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  13. Insulation and Heat Treatment of Bi-2212 Wire for Wind-and-React Coils

    Energy Technology Data Exchange (ETDEWEB)

    Peter K. F. Hwang

    2007-10-22

    Higher Field Magnets demand higher field materials such as Bi-2212 round superconducting wire. The Bi-2212 wire manufacture process depends on the coil fabrication method and wire insulation material. Considering the wind-and-react method, the coil must unifirmly heated to the melt temperature and uniformly cooled to the solidification temperature. During heat treat cycle for tightly wound coils, the leakage melt from conductor can chemically react with insulation on the conductor and creat short turns in the coils. In this research project, conductor, insulation, and coils are made to systemically study the suitable insulation materials, coil fabrication method, and heat treatment cycles. In this phase I study, 800 meters Bi-2212 wire with 3 different insulation materials have been produced. Best insulation material has been identified after testing six small coils for insulation integrity and critical current at 4.2 K. Four larger coils (2" dia) have been also made with Bi-2212 wrapped with best insulation and with different heattreatment cycle. These coils were tested for Ic in a 6T background field and at 4.2 K. The test result shows that Ic from 4 coils are very close to short samples (1 meter) result. It demonstrates that HTS coils can be made with Bi-2212 wire with best insulation consistently. Better wire insulation, improving coil winding technique, and wire manufacture process can be used for a wide range of high field magnet application including acclerators such as Muon Collider, fusion energy research, NMR spectroscopy, MRI, and other industrial magnets.

  14. Insulation and Heat Treatment of Bi-2212 Wires for Wind-and-React Coils

    International Nuclear Information System (INIS)

    Hwang, Peter K.F.

    2007-01-01

    Higher Field Magnets demand higher field materials such as Bi-2212 round superconducting wire. The Bi-2212 wire manufacture process depends on the coil fabrication method and wire insulation material. Considering the wind-and-react method, the coil must unifirmly heated to the melt temperature and uniformly cooled to the solidification temperature. During heat treat cycle for tightly wound coils, the leakage melt from conductor can chemically react with insulation on the conductor and creat short turns in the coils. In this research project, conductor, insulation, and coils are made to systemically study the suitable insulation materials, coil fabrication method, and heat treatment cycles. In this phase I study, 800 meters Bi-2212 wire with 3 different insulation materials have been produced. Best insulation material has been identified after testing six small coils for insulation integrity and critical current at 4.2 K. Four larger coils (2-inch dia) have been also made with Bi-2212 wrapped with best insulation and with different heattreatment cycle. These coils were tested for Ic in a 6T background field and at 4.2 K. The test result shows that Ic from 4 coils are very close to short samples (1 meter) result. It demonstrates that HTS coils can be made with Bi-2212 wire with best insulation consistently. Better wire insulation, improving coil winding technique, and wire manufacture process can be used for a wide range of high field magnet application including acclerators such as Muon Collider, fusion energy research, NMR spectroscopy, MRI, and other industrial magnets.

  15. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  16. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  17. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  18. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  19. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  20. Automating Energy Bandgap Measurements in Semiconductors Using LabVIEW

    Science.gov (United States)

    Garg, Amit; Sharma, Reena; Dhingra, Vishal

    2010-01-01

    In this paper, we report the development of an automated system for energy bandgap and resistivity measurement of a semiconductor sample using Four-Probe method for use in the undergraduate laboratory of Physics and Electronics students. The automated data acquisition and analysis system has been developed using National Instruments USB-6008 DAQ…

  1. Broadband photonic single sideband frequency up-converter based on the cross polarization modulation effect in a semiconductor optical amplifier for radio-over-fiber systems.

    Science.gov (United States)

    Lee, Seung-Hun; Kim, Hyoung-Jun; Song, Jong-In

    2014-01-13

    A broadband photonic single sideband (SSB) frequency up-converter based on the cross polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA) is proposed and experimentally demonstrated. An optical radio frequency (RF) signal in the form of an optical single sideband (OSSB) is generated by the photonic SSB frequency up-converter to solve the power fading problem caused by fiber chromatic dispersion. The generated OSSB RF signal has almost identical optical carrier power and optical sideband power. This SSB frequency up-conversion scheme shows an almost flat electrical RF power response as a function of the RF frequency in a range from 31 GHz to 75 GHz after 40 km single mode fiber (SMF) transmission. The photonic SSB frequency up-conversion technique shows negligible phase noise degradation. The phase noise of the up-converted RF signal at 49 GHz for an offset of 10 kHz is -93.17 dBc/Hz. Linearity analysis shows that the photonic SSB frequency up-converter has a spurious free dynamic range (SFDR) value of 79.51 dB · Hz(2/3).

  2. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  3. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  4. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  5. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  6. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  7. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  8. Two-dimensional Semiconductor-Superconductor Hybrids

    DEFF Research Database (Denmark)

    Suominen, Henri Juhani

    This thesis investigates hybrid two-dimensional semiconductor-superconductor (Sm-S) devices and presents a new material platform exhibiting intimate Sm-S coupling straight out of the box. Starting with the conventional approach, we investigate coupling superconductors to buried quantum well....... To overcome these issues we integrate the superconductor directly into the semiconducting material growth stack, depositing it in-situ in a molecular beam epitaxy system under high vacuum. We present a number of experiments on these hybrid heterostructures, demonstrating near unity interface transparency...

  9. Ultra-fast relaxation kinetics in semiconductors

    International Nuclear Information System (INIS)

    Luzzi, R.

    1983-01-01

    It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response funtion theory in systems far-from-equilibrium are reviewed in Section II. In Section III we present some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered. In last section we present a brief summary of the different aspects of the subject. (author) [pt

  10. Performance of the ATLAS semiconductor tracker

    CERN Document Server

    Alpigiani, C; The ATLAS collaboration

    2014-01-01

    We report the operation and performance of the ATLAS Semi-Conductor Tracker (SCT) functioning in a high luminosity and high radiation environment. The SCT is part of the inner tracking system of the ATLAS experiment at CERN and is constructed of 4088 modules assembled from silicon-strip sensors for a total of 6.3 million channels more than 99 % of which were fully functional throughout all data taking periods. Noise occupancy and hit efficiency as well as the Lorentz angle and radiation damage measurements will be discussed in details.

  11. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  12. METHODOLOGICAL NOTES: Integrating magnetism into semiconductor electronics

    Science.gov (United States)

    Zakharchenya, Boris P.; Korenev, Vladimir L.

    2005-06-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

  13. Ultra-fast relaxation kinetics in semiconductors

    International Nuclear Information System (INIS)

    Luzzi, R.

    1983-01-01

    It is presented a brief description of relaxation processes in highly excited semiconductor plasmas (HESP). Comparison with experimental data obtained by means of ultra-fast laser light spectroscopy (UFLS) is made. Some aspects of response function theory in systems far-from-equilibrium are reviewed in Section II. In Section III some comments on the question of nonequilibrium thermodynamics relevant to the problem to be considered are presented. In last Section a brief summary of the different aspects of the subject is also presented. (Author) [pt

  14. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  15. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  16. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  17. Neutron and gamma irradiation effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

  18. Neutron and gamma irradiation effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1990-01-01

    The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN bipolar junction transistors (BJTs), and metal-oxide-semiconductor field effect transistors (MOSFETs)

  19. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  20. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  1. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  2. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  3. Development of semiconductor laser based Doppler lidars for wind-sensing applications

    DEFF Research Database (Denmark)

    Rodrigo, Peter John; Hu, Qi; Pedersen, Christian

    2015-01-01

    We summarize the progress we have made in the development of semiconductor laser (SL) based Doppler lidar systems for remote wind speed and direction measurements. The SL emitter used in our wind-sensing lidar is an integrated diode laser with a tapered (semiconductor) amplifier. The laser source...

  4. Wannier-Frenkel hybrid exciton in organic-semiconductor quantum dot heterostructures

    International Nuclear Information System (INIS)

    Birman, Joseph L.; Huong, Nguyen Que

    2007-01-01

    The formation of a hybridization state of Wannier Mott exciton and Frenkel exciton in different hetero-structure configurations involving quantum dots is investigated. The hybrid excitons exist at the interfaces of the semiconductors quantum dots and the organic medium, having unique properties and a large optical non-linearity. The coupling at resonance is very strong and tunable by changing the parameters of the systems (dot radius, dot-dot distance, generation of the organic dendrites and the materials of the system etc...). Different semiconductor quantum dot-organic material combination systems have been considered such as a semiconductor quantum dot lattice embedded in an organic host, a semiconductor quantum dot at the center of an organic dendrite, a semiconductor quantum dot coated by an organic shell

  5. Key techniques for space-based solar pumped semiconductor lasers

    Science.gov (United States)

    He, Yang; Xiong, Sheng-jun; Liu, Xiao-long; Han, Wei-hua

    2014-12-01

    In space, the absence of atmospheric turbulence, absorption, dispersion and aerosol factors on laser transmission. Therefore, space-based laser has important values in satellite communication, satellite attitude controlling, space debris clearing, and long distance energy transmission, etc. On the other hand, solar energy is a kind of clean and renewable resources, the average intensity of solar irradiation on the earth is 1353W/m2, and it is even higher in space. Therefore, the space-based solar pumped lasers has attracted much research in recent years, most research focuses on solar pumped solid state lasers and solar pumped fiber lasers. The two lasing principle is based on stimulated emission of the rare earth ions such as Nd, Yb, Cr. The rare earth ions absorb light only in narrow bands. This leads to inefficient absorption of the broad-band solar spectrum, and increases the system heating load, which make the system solar to laser power conversion efficiency very low. As a solar pumped semiconductor lasers could absorb all photons with energy greater than the bandgap. Thus, solar pumped semiconductor lasers could have considerably higher efficiencies than other solar pumped lasers. Besides, solar pumped semiconductor lasers has smaller volume chip, simpler structure and better heat dissipation, it can be mounted on a small satellite platform, can compose satellite array, which can greatly improve the output power of the system, and have flexible character. This paper summarizes the research progress of space-based solar pumped semiconductor lasers, analyses of the key technologies based on several application areas, including the processing of semiconductor chip, the design of small and efficient solar condenser, and the cooling system of lasers, etc. We conclude that the solar pumped vertical cavity surface-emitting semiconductor lasers will have a wide application prospects in the space.

  6. Preparative semiconductor photoredox catalysis: An emerging theme in organic synthesis

    Directory of Open Access Journals (Sweden)

    David W. Manley

    2015-09-01

    Full Text Available Heterogeneous semiconductor photoredox catalysis (SCPC, particularly with TiO2, is evolving to provide radically new synthetic applications. In this review we describe how photoactivated SCPCs can either (i interact with a precursor that donates an electron to the semiconductor thus generating a radical cation; or (ii interact with an acceptor precursor that picks up an electron with production of a radical anion. The radical cations of appropriate donors convert to neutral radicals usually by loss of a proton. The most efficient donors for synthetic purposes contain adjacent functional groups such that the neutral radicals are resonance stabilized. Thus, ET from allylic alkenes and enol ethers generated allyl type radicals that reacted with 1,2-diazine or imine co-reactants to yield functionalized hydrazones or benzylanilines. SCPC with tertiary amines enabled electron-deficient alkenes to be alkylated and furoquinolinones to be accessed. Primary amines on their own led to self-reactions involving C–N coupling and, with terminal diamines, cyclic amines were produced. Carboxylic acids were particularly fruitful affording C-centered radicals that alkylated alkenes and took part in tandem addition cyclizations producing chromenopyrroles; decarboxylative homo-dimerizations were also observed. Acceptors initially yielding radical anions included nitroaromatics and aromatic iodides. The latter led to hydrodehalogenations and cyclizations with suitable precursors. Reductive SCPC also enabled electron-deficient alkenes and aromatic aldehydes to be hydrogenated without the need for hydrogen gas.

  7. Nuclear magnetic relaxation studies of semiconductor nanocrystals and solids

    Energy Technology Data Exchange (ETDEWEB)

    Sachleben, Joseph Robert [Lawrence Berkeley Lab., CA (United States); California Univ., Berkeley, CA (United States). Dept. of Chemistry

    1993-09-01

    Semiconductor nanocrystals, small biomolecules, and 13C enriched solids were studied through the relaxation in NMR spectra. Surface structure of semiconductor nanocrystals (CdS) was deduced from high resolution 1H and 13C liquid state spectra of thiophenol ligands on the nanocrystal surfaces. The surface coverage by thiophenol was found to be low, being 5.6 and 26% for nanocrystal radii of 11.8 and 19.2 Å. Internal motion is estimated to be slow with a correlation time > 10-8 s-1. The surface thiophenol ligands react to form a dithiophenol when the nanocrystals were subjected to O2 and ultraviolet. A method for measuring 14N-1H J-couplings is demonstrated on pyridine and the peptide oxytocin; selective 2D T1 and T2 experiments are presented for measuring relaxation times in crowded spectra with overlapping peaks in 1D, but relaxation effects interfere. Possibility of carbon-carbon cross relaxation in 13C enriched solids is demonstrated by experiments on zinc acetate and L-alanine.

  8. Developing Dynamic Single Page Web Applications Using Meteor : Comparing JavaScript Frameworks: Blaze and React

    OpenAIRE

    Yetayeh, Asabeneh

    2017-01-01

    This paper studies Meteor which is a JavaScript full-stack framework to develop interactive single page web applications. Meteor allows building web applications entirely in JavaScript. Meteor uses Blaze, React or AngularJS as a view layer and Node.js and MongoDB as a back-end. The main purpose of this study is to compare the performance of Blaze and React. A multi-user Blaze and React web applications with similar HTML and CSS were developed. Both applications were deployed on Heroku’s w...

  9. Semiconductor nanostructures for infrared applications

    NARCIS (Netherlands)

    Zurauskiene, N.; Asmontas, S.; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevicius, S.; Koenraad, P.M.; Wolter, J.H.; Leon, R.

    2004-01-01

    We present the results of time-resolved photoluminescence (TRPL) and optically detected microwave resonance (ODMR) spectroscopy investigations of semiconductor quantum dots and quantum wells. The ODMR spectra of InAs/GaAs QDs were detected via modulation of the total intensity of the QDs emission

  10. A Brief History of ... Semiconductors

    Science.gov (United States)

    Jenkins, Tudor

    2005-01-01

    The development of studies in semiconductor materials is traced from its beginnings with Michael Faraday in 1833 to the production of the first silicon transistor in 1954, which heralded the age of silicon electronics and microelectronics. Prior to the advent of band theory, work was patchy and driven by needs of technology. However, the arrival…

  11. Semiconductor radiation detectors: device physics

    National Research Council Canada - National Science Library

    Lutz, Gerhard

    1999-01-01

    ..., including nuclear physics, elementary particle physics, optical and x-ray astronomy, medicine, and materials testing - and the number of applications is growing continually. Closely related, and initiated by the application of semiconductors, is the development of low-noise low-power integrated electronics for signal readout. The success of semicond...

  12. Towards filament free semiconductor lasers

    DEFF Research Database (Denmark)

    McInerney, John; O'Brien, Peter; Skovgaard, Peter M. W.

    2000-01-01

    We outline physical models and simulations for suppression of self-focusing and filamentation in large aperture semiconductor lasers. The principal technical objective is to generate multi-watt CW or quasi-CW outputs with nearly diffraction limited beams, suitable for long distance free space...... propagation structures in lasers and amplifiers which suppress lateral reflections....

  13. Ultrafast Spectroscopy of Semiconductor Devices

    DEFF Research Database (Denmark)

    Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Marcher

    1999-01-01

    In this work we present an experimental technique for investigating ultrafast carrier dynamics in semiconductor optical amplifiers at room temperature. These dynamics, influenced by carrier heating, spectral hole-burning and two-photon absorption, are very important for device applications in inf...

  14. Radiation damage in semiconductor detectors

    International Nuclear Information System (INIS)

    Kraner, H.W.

    1981-12-01

    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced

  15. Acting and Reacting: Youth's Behavior in Corrupt Educational Settings

    Science.gov (United States)

    Sabic-El-Rayess, Amra

    2014-01-01

    With its broader employability to the issues of underperformance that may emerge in educational systems internationally, this empirical study redefines and expands Albert Hirschman's theory of voice, exit, and loyalty within higher education. The article formulates a new education-embedded theoretical framework that explains reactionary behaviors…

  16. Semiconductor Laser Wind Lidar for Turbine Control

    DEFF Research Database (Denmark)

    Hu, Qi

    This thesis describes an experimentally oriented study of continuous wave (CW) coherent Doppler lidar system design. The main application is remote wind sensing for active wind turbine control using nacelle mounted lidar systems; and the primary focus is to devise an industrial instrument that can...... historical overview within the topic of wind lidar systems. Both the potential and the challenges of an industrialized wind lidar has been addressed here. Furthermore, the basic concept behind the heterodyne detection and a brief overview of the lidar signal processing is explained; and a simple...... investigation of the telescope truncation and lens aberrations is conducted, both numerically and experimentally. It is shown that these parameters dictate the spatial resolution of the lidar system, and have profound impact on the SNR. In this work, an all-semiconductor light source is used in the lidar design...

  17. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  18. Absorption properties of metal-semiconductor hybrid nanoparticles.

    Science.gov (United States)

    Shaviv, Ehud; Schubert, Olaf; Alves-Santos, Marcelo; Goldoni, Guido; Di Felice, Rosa; Vallée, Fabrice; Del Fatti, Natalia; Banin, Uri; Sönnichsen, Carsten

    2011-06-28

    The optical response of hybrid metal-semiconductor nanoparticles exhibits different behaviors due to the proximity between the disparate materials. For some hybrid systems, such as CdS-Au matchstick-shaped hybrids, the particles essentially retain the optical properties of their original components, with minor changes. Other systems, such as CdSe-Au dumbbell-shaped nanoparticles, exhibit significant change in the optical properties due to strong coupling between the two materials. Here, we study the absorption of these hybrids by comparing experimental results with simulations using the discrete dipole approximation method (DDA) employing dielectric functions of the bare components as inputs. For CdS-Au nanoparticles, the DDA simulation provides insights on the gold tip shape and its interface with the semiconductor, information that is difficult to acquire by experimental means alone. Furthermore, the qualitative agreement between DDA simulations and experimental data for CdS-Au implies that most effects influencing the absorption of this hybrid system are well described by local dielectric functions obtained separately for bare gold and CdS nanoparticles. For dumbbell shaped CdSe-Au, we find a shortcoming of the electrodynamic model, as it does not predict the "washing out" of the optical features of the semiconductor and the metal observed experimentally. The difference between experiment and theory is ascribed to strong interaction of the metal and semiconductor excitations, which spectrally overlap in the CdSe case. The present study exemplifies the employment of theoretical approaches used to describe the optical properties of semiconductors and metal nanoparticles, to achieve better understanding of the behavior of metal-semiconductor hybrid nanoparticles.

  19. Streptococcus sinensis may react with Lancefield group F antiserum.

    Science.gov (United States)

    Woo, Patrick C Y; Teng, Jade L L; Leung, Kit-wah; Lau, Susanna K P; Tse, Herman; Wong, Beatrice H L; Yuen, Kwok-yung

    2004-11-01

    Lancefield group F streptococci have been found almost exclusively as members of the 'Streptococcus milleri' group, although they have been reported very occasionally in some other streptococcal species. Among 302 patients with bacteraemia caused by viridans streptococci over a 6-year period, three cases were caused by Streptococcus sinensis (type strain HKU4T, HKU5 and HKU6). All three patients had infective endocarditis complicating their underlying chronic rheumatic heart diseases. Gene sequencing showed no base differences between the 16S rRNA gene sequences of HKU5 and HKU6 and that of HKU4T. All three strains were Gram-positive, non-spore-forming cocci arranged in chains. All grew on sheep blood agar as alpha-haemolytic, grey colonies of 0.5-1 mm in diameter after 24 h incubation at 37 degrees C in ambient air. Lancefield grouping revealed that HKU5 and HKU6 were Lancefield group F, but HKU4T was non-groupable with Lancefield groups A, B, C, D, F or G antisera. HKU4T was identified by the Vitek system (GPI), API system (20 STREP) and ATB system (ID32 STREP) as 99 % Streptococcus intermedius, 51.3 % S. intermedius and 99.9 % Streptococcus anginosus, respectively. Using the same tests, HKU5 was identified as 87 % Streptococcus sanguinis/Streptococcus gordonii, 59 % Streptococcus salivarius and 99.6 % S. anginosus, respectively, and HKU6 as 87 % S. sanguinis/S. gordonii, 77 % Streptococcus pneumoniae and 98.3 % S. anginosus, respectively. The present data revealed that a proportion of Lancefield group F streptococci could be S. sinensis. Lancefield group F streptococci should not be automatically reported as 'S. milleri'.

  20. Dynamic thermoelectricity in uniform bipolar semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Volovichev, I.N., E-mail: vin@ire.kharkov.ua

    2016-07-01

    The theory of the dynamic thermoelectric effect has been developed. The effect lies in an electric current flowing in a closed circuit that consists of a uniform bipolar semiconductor, in which a non-uniform temperature distribution in the form of the traveling wave is created. The calculations are performed for the one-dimensional model in the quasi-neutrality approximation. It was shown that the direct thermoelectric current prevails, despite the periodicity of the thermal excitation, the circuit homogeneity and the lack of rectifier properties of the semiconductor system. Several physical reasons underlining the dynamic thermoelectric effect are found. One of them is similar to the Dember photoelectric effect, its contribution to the current flowing is determined by the difference in the electron and hole mobilities, and is completely independent of the carrier Seebeck coefficients. The dependence of the thermoelectric short circuit current magnitude on the semiconductor parameters, as well as on the temperature wave amplitude, length and velocity is studied. It is shown that the magnitude of the thermoelectric current is proportional to the square of the temperature wave amplitude. The dependence of the thermoelectric short circuit current on the temperature wave length and velocity is the nonmonotonic function. The optimum values for the temperature wave length and velocity, at which the dynamic thermoelectric effect is the greatest, have been deduced. It is found that the thermoelectric short circuit current changes its direction with decreasing the temperature wave length under certain conditions. The prospects for the possible applications of the dynamic thermoelectric effect are also discussed.