Si/Ge intermixing during Ge Stranski–Krastanov growth

Directory of Open Access Journals (Sweden)

Alain Portavoce

2014-12-01

Full Text Available The Stranski–Krastanov growth of Ge islands on Si(001 has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing, the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.

Sharing Data to Build a Medical Information Commons: From Bermuda to the Global Alliance.

Science.gov (United States)

Cook-Deegan, Robert; Ankeny, Rachel A; Maxson Jones, Kathryn

2017-08-31

The Human Genome Project modeled its open science ethos on nematode biology, most famously through daily release of DNA sequence data based on the 1996 Bermuda Principles. That open science philosophy persists, but daily, unfettered release of data has had to adapt to constraints occasioned by the use of data from individual people, broader use of data not only by scientists but also by clinicians and individuals, the global reach of genomic applications and diverse national privacy and research ethics laws, and the rising prominence of a diverse commercial genomics sector. The Global Alliance for Genomics and Health was established to enable the data sharing that is essential for making meaning of genomic variation. Data-sharing policies and practices will continue to evolve as researchers, health professionals, and individuals strive to construct a global medical and scientific information commons.

Bermuda Deep Water Caves 2011: Dives of Discovery between 20110607 and 20110627

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — During the three week NOAA Ocean Exploration project, Bermuda Deep Water Caves 2011: Dives of Discovery, our four member deep team, aided by numerous assistants,...

Elevated temperatures and bleaching on a high latitude coral reef: the 1988 Bermuda event

Science.gov (United States)

Cook, Clayton B.; Logan, Alan; Ward, Jack; Luckhurst, Brian; Berg, Carl J.

1990-03-01

Sea temperatures were normal in Bermuda during 1987, when Bermuda escaped the episodes of coral bleaching which were prevalent throughout the Caribbean region. Survey transecs in 1988 on 4 6 m reefs located on the rim margin and on a lagoonal patch reef revealed bleaching only of zoanthids between May and July. Transect and tow surveys in August and September revealed bleaching of several coral species; Millepora alcicornis on rim reefs was the most extensively affected. The frequency of bleaching in this species, Montastrea annularis and perhaps Diploria labyrinthiformis was significantly higher on outer reefs than on inshore reefs. This bleaching period coincided with the longest period of elevated sea temperatures in Bermuda in 38 years (28.9 30.9°C inshore, >28° offshore). By December, when temperatures had returned to normal, bleaching of seleractinians continued, but bleaching of M. alcicornis on the outer reefs was greatly reduced. Our observations suggest that corals which normally experience wide temperature ranges are less sensitive to thermal stress, and that high-latitude reef corals are sensitive to elevated temperatures which are within the normal thermal range of corals at lower latitudes.

Preparation, characterization and thermoelectric properties of a polyaniline matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite

Energy Technology Data Exchange (ETDEWEB)

Ma, Sude; Zeng, Hao; Zhang, Changxing; Liu, Chun; Xu, Qian [Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy; Zhang, Jianjun [Xihua Univ., Chengdu (China). School of Materials Science and Engineering

2017-11-01

In times of industrialization, much low temperature waste heat is released and no viable technology exists which can produce electricity from this low energy density heat. So the long sought-after class thermoelectric (TE) material which directly achieves conversion between thermal and electrical energy obtains much attention. However, the traditional TE materials are alloys of inorganic materials and expensive, and most of them have some level of toxicity, so the research on organic TE materials is very important. The polyaniline (PANI, i. e., a conducting polymer) and PANI matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite material were prepared. The chemical structure, microstructure and thermoelectric properties were investigated by FTIR, XRD, SEM and ZEM. Results showed that the molecule chains in the PANI were not ranged very neatly, and Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te in the composite material formed interconnected network as 20 wt.-% Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was added. Power factor of the composite material increased greatly while its ZT was almost two times of PANI. The addition of Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was an effective method to increase the thermoelectric properties of PANI.

BERMUDA-1DG: a one-dimensional photon transport code

International Nuclear Information System (INIS)

Suzuki, Tomoo; Hasegawa, Akira; Nakashima, Hiroshi; Kaneko, Kunio.

1984-10-01

A one-dimensional photon transport code BERMUDA-1DG has been developed for spherical and infinite slab geometries. The purpose of development is to equip the function of gamma rays calculation for the BERMUDA code system, which was developed by 1983 only for neutron transport calculation as a preliminary version. A group constants library has been prepared for 30 nuclides, and it now consists of the 36-group total cross sections and secondary gamma ray yields by the 120-group neutron flux. For the Compton scattering, group-angle transfer matrices are accurately obtained by integrating the Klein-Nishina formula taking into account the energy and scattering angle correlation. The pair production cross sections are now calculated in the code from atomic number and midenergy of each group. To obtain angular flux distribution, the transport equation is solved in the same way as in case of neutron, using the direct integration method in a multigroup model. Both of an independent gamma ray source problem and a neutron-gamma source problem are possible to be solved. This report is written as a user's manual with a brief description of the calculational method. (author)

A molecular evaluation of the Liagoraceae sensu lato (Nemaliales, Rhodophyta) in Bermuda including Liagora nesophila sp. nov. and Yamadaella grassyi sp. nov.

Science.gov (United States)

Popolizio, Thea R; Schneider, Craig W; Lane, Christopher E

2015-08-01

We have undertaken a comprehensive, molecular-assisted alpha-taxonomic examination of the rhodophyte family Liagoraceae sensu lato, a group that has not previously been targeted for molecular studies in the western Atlantic. Sequence data from three molecular markers indicate that in Bermuda alone there are 10 species in nine different genera. These include the addition of three genera to the flora - Hommersandiophycus, Trichogloeopsis, and Yamadaella. Liagora pectinata, a species with a type locality in Bermuda, is phylogenetically allied with Indo-Pacific species of Hommersandiophycus, and the species historically reported as L. ceranoides for the islands is morphologically and genetically distinct from that taxon, and is herein described as L. nesophila sp. nov. Molecular sequence data have also uncovered the Indo-Pacific L. mannarensis in Bermuda, a long-distance new western Atlantic record. DNA sequences of Trichogloeopsis pedicellata from the type locality (Bahamas) match with local specimens demonstrating its presence in Bermuda. We described Yamadaella grassyi sp. nov. from Bermuda, a species phylogenetically and morphologically distinct from the generitype, Y. caenomyce of the Indo-Pacific. Our data also indicated a single species each of Ganonema, Gloiocallis, Helminthocladia, Titanophycus, and Trichogloea in the flora. © 2015 Phycological Society of America.

Hydrothermal crystallization in the KOH-TiO2-GeO2-H2O system at 500 deg C and 0.1 GPa

International Nuclear Information System (INIS)

Ilyushin, G.D.

2003-01-01

The identification of structural phases and crystallochemical analysis of phases in a KOH-TiO 2 -GeO 2 -H 2 O system under conditions of high temperatures and pressures are performed. A comparison is made with earlier obtained results for a system of KOH-GeO 2 (quartz-like structure)-H 2 O. It is established that K 2 Ti 6 O 13 skeleton potassium titanate is a basic phase in the system of KOH-TiO 2 -GeO 2 -H 2 O at 500 deg C and 0.1 GPa within a wide range of varying TiO 2 :GeO 2 and KOH concentrations [ru

Indole-diterpenes and ergot alkaloids in Cynodon dactylon (Bermuda grass) infected with Claviceps cynodontis from an outbreak of tremors in cattle.

Science.gov (United States)

Uhlig, Silvio; Botha, Christo J; Vrålstad, Trude; Rolén, Elin; Miles, Christopher O

2009-12-09

Tremorgenic syndromes in mammals are commonly associated with indole-diterpenoid alkaloids of fungal origin. Cattle are sometimes affected by tremors (also called "staggers") when they graze on toxic grass pastures, and Bermuda grass ( Cynodon dactylon , kweek) has been known to be associated with tremors for several decades. This study reports the identification of paspalitrems and paspaline-like indole-diterpenes in the seedheads of Claviceps cynodontis -infected Bermuda grass collected from a pasture that had caused a staggers syndrome in cattle in South Africa and thereby links the condition to specific mycotoxins. The highest concentration (about 150 mg/kg) was found for paspalitrem B. Ergonovine and ergine (lysergic acid amide), together with their C-8 epimers, were found to co-occur with the indole-diterpenes at concentrations of about 10 microg/kg. The indole-diterpene profile of the extract from the ergotized Bermuda grass was similar to that of Claviceps paspali sclerotia. However, the C. paspali sclerotia contained in addition agroclavine and elymoclavine. This is the first study linking tremors associated with grazing of Bermuda grass to specific tremorgenic indole-diterpenoid mycotoxins.

Ergot fungus Claviceps cynodontis found on Bermuda grass (Cynodon dactylon) in the Americas

Czech Academy of Sciences Publication Activity Database

Pažoutová, Sylvie; Odvody, G.; Frederickson, D.E.

2005-01-01

Roč. 27, - (2005), s. 1-6 ISSN 0706-0661 Institutional research plan: CEZ:AV0Z5020903 Keywords : claviceps cynodon tis * ergot * bermuda grass Subject RIV: EE - Microbiology, Virology Impact factor: 1.066, year: 2005

Sub-0.1 mu m line fabrication by Focused ion beam and columnar structural Se-Ge resist

CERN Document Server

Lee, H Y; Chung, H B

1998-01-01

As a method to enhance the sensitivity (S) of an inorganic resist for focused-ion-beam (FIB), lithography, sub-0.1 mu m patterning properties of a columnar structural alpha-Se sub 7 sub 5 Ge sub 2 sub 5 resist have been investigated using 30 keV low-energy Ga sup + -FIB exposure and CF sub 4 reactive-ion etching (RIE). development. The Se sub 7 sub 5 Ge sub 2 sub 5 thin films were 60 .deg. and 80 .deg. -obliquely deposited on Si substrate and parts of the films were annealed for several minutes at the glass transition temperature (T sub g =approx 220 .deg. C). Columnar structures with the angles of approximately 40 .deg. and 65 .deg. are observed in 60 .deg. and 80 .deg. -obliquely deposited films, respectively, and they disappear after annealing. Despite the disappearance of the columnar structures, a critical decrease in thickness is not observed. For the FIB exposures with a beam diameter of approx 0.1 mu m and around the threshold dose, the negative-type fine patterns with linewidth of about 0.06 approx 0...

Results on neutrinoless double beta decay of 76Ge from GERDA Phase I

Science.gov (United States)

Palioselitis, Dimitrios; GERDA Collaboration

2015-05-01

The Germanium Detector Array (GERDA) experiment is searching for the neutrinoless double beta (0νββ) decay of 76Ge by operating bare germanium diodes in liquid argon. GERDA is located at the Gran Sasso National Laboratory (LNGS) in Italy. During Phase I, a total exposure of 21.6 kg yrand a background index of 0.01 cts/(keVkg yr) were reached. No signal was observed and a lower limit of T0ν1/2 > 2.1 · 1025 yr(90% C.L.) is derived for the half life of the 0νββ decay of 76Ge.

ENZYMATIC HYDROLYSIS OF SWITCHGRASS AND COASTAL BERMUDA GRASS PRETREATED USING DIFFERENT CHEMICAL METHODS

Directory of Open Access Journals (Sweden)

Jiele Xu

2011-06-01

Full Text Available To investigate the effects of biomass feedstock and pretreatment method on the enzyme requirement during hydrolysis, swichgrass and coastal Bermuda grass pretreated using H2SO4, NaOH, and Ca(OH2 at the optimal conditions were subjected to enzymatic hydrolysis using two enzyme combinations: NS 50013 + NS 50010 and Cellic CTec + Cellic HTec. The enzyme loadings were optimized, and correlations between feedstock property, pretreatment strategy, and enzyme usage were evaluated. The results show that pretreatment methods resulting in greater lignin contents in the pretreated biomass were generally associated with higher enzyme requirements. More sugars could be recovered from alkaline-pretreated biomass during enzymatic hydrolysis due to the better carbohydrate preservation achieved at mild pretreatment temperatures. The cellulase enzyme, Cellic CTec, was more efficient in catalyzing the hydrolysis of coastal Bermuda grass, a feedstock more digestible than the pretreated swichgrass, following pretreatment with NaOH or Ca(OH2.

Results on neutrinoless double beta decay of 76Ge from GERDA Phase I

International Nuclear Information System (INIS)

Palioselitis, Dimitrios

2015-01-01

The Germanium Detector Array (GERDA) experiment is searching for the neutrinoless double beta (0νββ) decay of 76 Ge by operating bare germanium diodes in liquid argon. GERDA is located at the Gran Sasso National Laboratory (LNGS) in Italy. During Phase I, a total exposure of 21.6 kg yrand a background index of 0.01 cts/(keVkg yr) were reached. No signal was observed and a lower limit of T 0ν 1/2 > 2.1 · 10 25 yr(90% C.L.) is derived for the half life of the 0νββ decay of 76 Ge. (paper)

Population Structure of Montastraea cavernosa on Shallow versus Mesophotic Reefs in Bermuda

Science.gov (United States)

Goodbody-Gringley, Gretchen; Marchini, Chiara; Chequer, Alex D.; Goffredo, Stefano

2015-01-01

Mesophotic coral reef ecosystems remain largely unexplored with only limited information available on taxonomic composition, abundance and distribution. Yet, mesophotic reefs may serve as potential refugia for shallow-water species and thus understanding biodiversity, ecology and connectivity of deep reef communities is integral for resource management and conservation. The Caribbean coral, Montastraea cavernosa, is considered a depth generalist and is commonly found at mesophotic depths. We surveyed abundance and size-frequency of M. cavernosa populations at six shallow (10m) and six upper mesophotic (45m) sites in Bermuda and found population structure was depth dependent. The mean surface area of colonies at mesophotic sites was significantly smaller than at shallow sites, suggesting that growth rates and maximum colony surface area are limited on mesophotic reefs. Colony density was significantly higher at mesophotic sites, however, resulting in equal contributions to overall percent cover. Size-frequency distributions between shallow and mesophotic sites were also significantly different with populations at mesophotic reefs skewed towards smaller individuals. Overall, the results of this study provide valuable baseline data on population structure, which indicate that the mesophotic reefs of Bermuda support an established population of M. cavernosa. PMID:26544963

Integrative, Interdisciplinary Learning in Bermuda Through Video Projects

Science.gov (United States)

Fox, R. J.; Connaughton, M.

2017-12-01

Understanding an ecosystem and how humans impact it requires a multidisciplinary perspective and immersive, experiential learning is an exceptional way to achieve understanding. In summer 2017 we took 18 students to the Bermuda Institute of Ocean Sciences (BIOS) as part of a Washington College two-week, four-credit summer field course. We took a multi-disciplinary approach in choosing the curriculum. We focused on the ecology of the islands and surrounding coral reefs as well as the environmental impacts humans are having on the islands. Additionally, we included geology and both local and natural history. Our teaching was supplemented by the BIOS staff and local tour guides. The student learning was integrated and reinforced through student-led video projects. Groups of three students were tasked with creating a 5-7 minute video appropriate for a public audience. We selected video topics based upon locations we would visit in the first week and topics were randomly assigned. The project intention was for the students to critically analyze and evaluate an area of Bermuda that is a worthwhile tourist destination. Students presented why a tourist should visit a locale, the area's ecological distinctiveness and complexity, the impact humans are having, and ways tourists can foster stewardship of that locale. These projects required students to learn how to make and edit videos, collaborate with peers, communicate a narrative to the public, integrate multi-disciplinary topics for a clear, whole-system perspective, observe the environment from a critical viewpoint, and interview local experts. The students produced the videos within the two-week period, and we viewed the videos as a group on the last day. The students worked hard, were proud of their final products, and produced excellent videos. They enjoyed the process, which provided them opportunities to collaborate, show individual strengths, be creative, and work independently of the instructors.

The first acceleration to 300 GeV

CERN Multimedia

CERN PhotoLab

1976-01-01

After the acceleration to 80 GeV in May the 200 GeV energy was attained on June 4, followed by a successful attempt to reach 300 GeV and then 400 GeV by the Council session on June 17. Here at the desk (centre) Boris Milman and Bas de Raad, (right) Pat Mills and a machine operator. Then standing on the back Jacques Althaber, Simon Van der Meer, Hans-Peter Kindermann, Raymond Rausch, John Adams, Klaus Batzner, and still back Antonio Millich, Jim Allaby, Wim Middelkoop, Bo Angerth, Hans Horisberger.

Effect of lime, N, P, and K amendments to surface-mined coal spoils on yield and chemical composition of common Bermuda grass

Energy Technology Data Exchange (ETDEWEB)

Ebelhar, M W; Barnhisel, R I; Akin, G W; Powell, J L

1982-12-01

Common Bermuda grass (Cynodon dactylon, L. Pers.) was used as an alternative to cool-season grasses such as tall fescue (Festuca arundinacea Schreb.) on acid sandstone surface-mine spoils in western Kentucky. Lime, N, P, and K fertilizer amendments were evaluated as to their effects in promoting Bermuda grass growth and development. The applied lime was effective in raising the pH from 3.4 to 4.6, 5.7, and 6.3 for the 18, 36 and 72 metric ton/ha treatments, respectively, over a 17-month period. Nitrogen was found to affect Bermuda grass production significantly and severe deficiency symptoms were observed where N was not applied. Dry matter yields increased significantly with each additional increment of N applied. Although the application of P and K increased the concentration of these ions in the plant tissues, the main influence of P and K was to increase the plants' resistance to winter killing; little effect on total dry matter production was observed. 19 references.

Ruminal production of methane ''in vitro'' with Coast Cross No. 1 bermuda grass (Cynodon dactylon)

Energy Technology Data Exchange (ETDEWEB)

Geerken, C M; Funes, F; Gonzalez, R

1980-11-01

1. Samples of Coast Cross No. 1 bermuda grass (Cynodon dactylon) of 3, 6, 9, 12 and 15 days of cut, irrigated and fertilized at a rate of 400 kg N/ha/year, were used to determine their bromatological composition, digestibility and methane production ''in vitro''. 2. Crude protein concentration of the pasture fell sharply from 20 to 4% and crude fibre increased from 26 to 34% as the pasture grew older. DM digestibility decreased from 58 to 44% from the 6th to the 15th week of cut. Methane production ''in vitro'' was significantly lower (P is less than 0,01), at 3 and 6 weeks, than that obtained at older ages. The differences were more marked when calculated per unit of digested DM. 3. These results could be of interest in the search of a better utilization of dietary energy for grazing animals. (Refs. 16).

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Science.gov (United States)

Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

2018-04-01

The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

Bermuda's balancing act: The economic dependence of cruise and air tourism on healthy coral reefs

NARCIS (Netherlands)

van Beukering, P.J.H.; Sarkis, S.; van der Putten, L.; Papyrakis, E.

2015-01-01

Although Bermuda has to date managed to achieve equilibrium between tourism and coral reef conservation, this delicate balance may be threatened by the growth and changing face of the tourism industry. This may result in negative impacts on the coral reefs and services provided by this valuable

The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

International Nuclear Information System (INIS)

Mahmodi, H.; Hashim, M. R.

2010-01-01

In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: structure and optical properties

Science.gov (United States)

Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Stoffel, M.; Rinnert, H.; Vergnat, M.

2017-07-01

Ge(x)[SiO2](1-x) (0.1  ⩽  x  ⩽  0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Ge x [SiO2](1-x) films with x  ⩾  0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeO x clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

KAUST Repository

Dong, Y.

2014-07-26

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

Bermuda Triangle: a subsystem of the 168/E interfacing scheme used by Group B at SLAC

International Nuclear Information System (INIS)

Oxoby, G.J.; Levinson, L.J.; Trang, Q.H.

1979-12-01

The Bermuda Triangle system is a method of interfacing several 168/E microprocessors to a central system for control of the processors and overlaying their memories. The system is a three-way interface with I/O ports to a large buffer memory, a PDP11 Unibus and a bus to the 168/E processors. Data may be transferred bidirectionally between any two ports. Two Bermuda Triangles are used, one for the program memory and one for the data memory. The program buffer memory stores the overlay programs for the 168/E, and the data buffer memory, the incoming raw data, the data portion of the overlays, and the outgoing processed events. This buffering is necessary since the memories of 168/E microprocessors are small compared to the main program and the amount of data being processed. The link to the computer facility is via a Unibus to IBM channel interface. A PDP11/04 controls the data flow. 7 figures, 4 tables

Hydrostatic pressure-tuned magnetostructural transition and magnetocaloric effect in Mn-Co-Ge-In compounds

Science.gov (United States)

Liang, F. X.; Shen, F. R.; Liu, Y.; Li, J.; Qiao, K. M.; Wang, J.; Hu, F. X.; Sun, J. R.; Shen, B. G.

2018-05-01

Polycrystalline MnCoGe0.99In0.01 with magnetostructural transition temperature (Tmstr) around 330 K has been prepared by arc-melting technique, and the pressure-tuned magnetostructural transition as well as the magnetocaloric effect (MCE) has been investigated. The experimental results indicate that a pressure (P) smaller than 0.53 GPa can shift Tmstr to lower temperature at a considerable rate of 119 K/GPa with the coupled nature of magnetostructural transition unchanged. However, as P reaches 0.53 GPa, the martensitic structural transition temperature (TM) further shifts to 254 K while the magnetic transition temperature of austenitic phase (TCA) occurs at around 282 K, denoting the decoupling of magnetostructural transition. Further increasing P to 0.87 GPa leads the further shift of TM to a lower temperature while the TCA keeps nearly unchanged. Therefore, the entropy change (ΔS) of the MnCoGe0.99In0.01 under different magnetic fields can be tailored by adjusting the hydrostatic pressure.

Evaluation of a public health intervention to lower mercury exposure from fish consumption in Bermuda.

Directory of Open Access Journals (Sweden)

Eric Dewailly

Full Text Available OBJECTIVES: To assess the efficacy of a public health intervention to reduce blood mercury (Hg concentration levels in pregnant Bermudian women. METHODS: In 2003, we conducted a study entitled "Prenatal exposure of the Bermudian Population to Environmental Contaminants" which provided Bermuda's first baseline data on prenatal exposure to several environmental contaminants, including Hg. The mean Hg concentration from 42 healthy newborns measured in umbilical cord blood was 41.3 nmol/L, ranging from 5-160 nmol/L. This concentration was much higher than expected, being approximately 8 times the general levels found in Canada and the U.S. Furthermore, we estimated that 85% of total Hg measured was in the form of methylmercury (MeHg, indicating that seafood consumption was the primary source of Hg exposure during pregnancy in Bermuda. Locally sourced seafood was identified as the most significant possible contributory source of Hg exposure. In 2005 the authors began a complementary research programme to study the levels of Hg in local commercial fish species. Coming out of this research were specific local fish consumption guidelines issued by the Department of Health advising pregnant women to avoid those local fish species found to be high in Hg while still encouraging consumption of fish species having lower Hg levels. RESULTS: In 2010, under another research initiative, we returned to Bermuda to carry out another evaluation of Hg in human blood. Hg was measured in the blood of 49 pregnant women. The arithmetic mean Hg blood concentration was 6.6 nmol/L and the geometric mean 4.2 nmol/L. The maximum concentration found was 24 nmol/L. CONCLUSIONS: Hg exposure of Bermudian pregnant women has dropped significantly by a factor of around 5 since the foetal cord blood study in 2003.

Investigating Bermuda's pollution history through stable isotope analyses of modern and museum-held gorgonian corals

International Nuclear Information System (INIS)

Baker, David M.; Murdoch, Thaddeus J.T.; Conti-Jerpe, Inga; Fogel, Marilyn

2017-01-01

For centuries, Bermuda has been challenged with wastewater management for the protection of human and environmental health. By quantifying the δ 15 N of the common sea fan Gorgonia ventalina sampled from 30 sites throughout Bermuda we show that sewage-derived nitrogen is detectable on nearshore coral reefs and declines across the lagoon to the outer rim. We also sampled gorgonians from two museum collections representing a 50y time-series (1958–2008). These samples revealed an increase in δ 15 N of > 4.0‰ until the mid-1970s, after which δ 15 N values slowly declined by ~ 2.0‰. A δ 15 N chronology from a gorgonian skeleton exhibited a similar decline over the last 30–40 years of approximately 0.6‰. We conclude that policies have been effective in reducing sewage impacts to Bermudian reefs. However, significant sources of sewage pollution persist and are likely have a strong impact on harbor and nearshore coral communities and human health.

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

International Nuclear Information System (INIS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.; Keyes, B. M.

2000-01-01

Minority carrier lifetimes and interface recombination velocities for GaAs grown on a Si wafer using compositionally graded GeSi buffers have been investigated as a function of GaAs buffer thickness using monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of antiphase domain disorder, with threading dislocation densities measured by etch pit density of 5x10 5 -2x10 6 cm -2 . Analysis indicates no degradation in either minority carrier lifetime or interface recombination velocity down to a GaAs buffer thickness of 0.1 μm. In fact, record high minority carrier lifetimes exceeding 10 ns have been obtained for GaAs on Si with a 0.1 μm GaAs buffer. Secondary ion mass spectroscopy reveals that cross diffusion of Ga, As, and Ge at the GaAs/Ge interface formed on the graded GeSi buffers are below detection limits in the interface region, indicating that polarity control of the GaAs/Ge interface formed on GeSi/Si substrates can be achieved. (c) 2000 American Institute of Physics

The 50 GeV program at SLAC

International Nuclear Information System (INIS)

Prescott, C.Y.

1994-03-01

SLAC has undertaken a modes programs to upgrade the beam energy for fixed target experiments to 50 GeV. This upgrade is possible due to the previous extensive development work on the linac accelerating gradient for the SLC, which has been operational for over five years. The SLC can deliver a beam of energy up to 60 GeV using a pulse compression technique in the rf system which trades pulse length for a higher pulse amplitude. This mode of operation has been reliable and routine for the SLC. However the beam line transport which takes electrons or positrons from the end of the linac to the target in End Station A has not been upgraded from the original design energy of 25 GeV. The 50 GeV upgrade for the fixed target experiments consists in modifying and increasing the number of beam line dipole magnets to reach 50 GeV, plus modernization of the beam line instrumentation and controls. The plans for spin structure experiments using electron beams at energies up to 50 GeV are described

The 76Ge(n,p)76Ga reaction and its relevance to searches for the neutrino-less double-beta decay of 76Ge

Science.gov (United States)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan, Fnu

2015-10-01

The 76Ge(n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.9 keV state of 76Ge, which decays by emission of a 2040.7 keV γ ray. Using HPGe detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrino-less double-beta decay of 76Ge with its Q-value of 2039.0 keV. In the neutron energy range between 10 and 20 MeV the production cross section of the 2040.7 keV γ ray is approximately 0.1 mb. In the same experiment γ rays of energy 2037.9 keV resulting from the 76Ge(n, γ)77Ge reaction were clearly observed. Adding the 76Ge(n,n' γ)76Ge reaction, which also produces the 2040.7 keV γ ray with a cross section value of the order of 0.1 mb clearly shows that great care has to be taken to eliminate neutron-induced backgrounds in searches for neutrino-less double-beta decay of 76Ge. This work was supported by the U.S. DOE under Grant NO. DE-FG02-97ER41033.

Geotechnical properties of sediments from North Pacific and Northern Bermuda Rise

International Nuclear Information System (INIS)

Silva, A.J.; Laine, E.P.; Lipkin, J.; Heath, G.R.; Akers, S.A.

1980-01-01

Studies of geotechnical properties for the Sub-seabed Disposal Program have been oriented toward sediment characterization related to effectiveness as a containment media and determination of detailed engineering behavior. Consolidation tests of the deeper samples in the North Pacific clays indicate that the sediment column is normally consolidated. The in-situ coefficient of permeability (k) within the cored depth of 25 meters is relatively constant at 10 -7 cm/sec. Consolidated undrained (CIU) triaxial tests indicate stress-strain properties characteristic of saturated clays with effective angles of friction of 35 0 for smectite and 31 0 for illite. These results are being used in computer modeling efforts. Some general geotechnical property data from the Bermuda Rise are also discussed

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

Science.gov (United States)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

Science.gov (United States)

Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

2018-04-01

Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-02-24

The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

Science.gov (United States)

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-01-01

The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

Directory of Open Access Journals (Sweden)

Mastura Shafinaz Zainal Abidin

2014-02-01

Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

Cross-correlation analysis of Ge/Li/ spectra

International Nuclear Information System (INIS)

MacDonald, R.; Robertson, A.; Kennett, T.J.; Prestwich, W.V.

1974-01-01

A sensitive technique is proposed for activation analysis using cross-correlation and improved spectral orthogonality achieved through use of a rectangular zero area digital filter. To test the accuracy and reliability of the cross-correlation procedure five spectra obtained with a Ge/Li detector were combined in different proportions. Gaussian distributed statistics were then added to the composite spectra by means of a pseudo-random number generator. The basis spectra used were 76 As, 82 Br, 72 Ga, 77 Ge, and room background. In general, when the basis spectra were combined in roughly comparable proportions the accuracy of the techique proved to be excelent (>1%). However, of primary importance was the ability of the correlation technique to identify low intensity components in the presence of high intensity components. It was found that the detection threshold for Ge, for example, was not reached until the Ge content in the unfiltered spectrum was <0.16%. (T.G.)

Optical response of Cu3Ge thin films

OpenAIRE

Aboelfotoh, M. O.; Guizzetti, G.; Marabelli, F.; Pellegrino, Paolo; Sassella, A.

1996-01-01

We report an investigation on the optical properties of Cu3Ge thin films displaying very high conductivity, with thickness ranging from 200 to 2000 Å, deposited on Ge substrates. Reflectance, transmittance, and ellipsometric spectroscopy measurements were performed at room temperature in the 0.01-6.0, 0.01-0.6, and 1.4-5.0 eV energy range, respectively. The complex dielectric function, the optical conductivity, the energy-loss function, and the effective charge density were obtained over the ...

Study of Ge loss during Ge condensation process

International Nuclear Information System (INIS)

Xue, Z.Y.; Di, Z.F.; Ye, L.; Mu, Z.Q.; Chen, D.; Wei, X.; Zhang, M.; Wang, X.

2014-01-01

Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford backscattering spectrometry. This work reveals that Ge loss can be attributed to the Ge oxidation at SiO 2 /SiGe interface, Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface. During Ge condensation process, with the increase of the Ge content, the Si atoms become insufficient for selective oxidation at the oxide/SiGe interface. Consequently, the Si and Ge are oxidized simultaneously. When the Ge composition in SiGe layer increases further and approaches 100%, the Ge atoms begin to diffuse into the top SiO 2 layer and buried SiO 2 layer. However, the X-ray photoelectron spectrometry analysis manifests that the chemical states of the Ge in top SiO 2 layer are different from those in buried SiO 2 layer, as the Ge atoms diffused into top SiO 2 layer are oxidized to form GeO 2 in the subsequent oxidation step. With the increase of the diffusion time, a quantity of Ge atoms diffuse through buried SiO 2 layer and pile up at buried SiO 2 /Si interface due to the interfacial trapping. The SiO 2 /Si interface acts like a pump, absorbing Ge from a Ge layer continuously through a pipe-buried SiO 2 layer. With the progress of Ge condensation process, the quantity of Ge accumulated at SiO 2 /Si interface increases remarkably. - Highlights: • Ge loss during Ge condensation process is attributed to the Ge oxidation at SiO 2 /SiGe interface. • Ge diffusion in SiO 2 layers and Ge trapped at buried SiO 2 /Si interface • When Ge content in SiGe layer approaches 100%, Ge diffusion into the SiO 2 layer is observed. • Ge then gradually diffuses through buried SiO 2 layer and pile up at SiO 2 /Si interface

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

Energy Technology Data Exchange (ETDEWEB)

Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

Long afterglow properties of Eu2+/Mn2+ doped Zn2GeO4

International Nuclear Information System (INIS)

Wan, Minhua; Wang, Yinhai; Wang, Xiansheng; Zhao, Hui; Li, Hailing; Wang, Cheng

2014-01-01

Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized via a high temperature solid state reaction. X-ray diffraction (XRD), afterglow spectra, decay curves and thermoluminescence curves were utilized to characterize the samples. The X-ray diffraction phases indicate that the doping of small amount of transition metal ions or rare earth ions has no significant influence on the crystal structure of Zn 2 GeO 4 . According to the afterglow spectra, we found that the Zn 2 GeO 4 :Eu 2+ 0.01 exhibits a broad band emission with a peak at 474 nm, which could be ascribed to Eu 2+ transition between 4f 6 5d 1 and 4f 7 electron configurations. The Zn 2 GeO 4 :Mn 2+ 0.01 shows a narrow band emission peaking at 532 nm corresponding to the characteristic transition of Mn 2+ ( 4 T 1 → 6 A 1 ). The thermoluminescence (TL) curves above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence. The results indicate that Zn 2 GeO 4 may be an excellent host material for the rare earth ions or transition metal ions long afterglows. -- Highlights: • Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized. • Found that these phosphors possess a persistent luminescence property. • The long afterglow spectra were measured. • Found that these phosphors possess a trap level by thermoluminescence

Structural and electronic properties of Pt induced nanowires on Ge(110)

Energy Technology Data Exchange (ETDEWEB)

Zhang, L.; Bampoulis, P.; Safaei, A.; Zandvliet, H.J.W.; Houselt, A. van, E-mail: A.vanHouselt@utwente.nl

2016-11-30

Highlights: • Deposition of Pt induces regularly spaced (1.13 nm, 1.97 nm and 3.38 nm) nanowires on Ge(110). • In the troughs between the wires spaced 6× the Ge lattice consant pentagons are observed. • Spatially resolved STS reveals a filled electronic state at −0.35 eV. • This state has its highest intensity above the pentagons. • For 2 ML Pt, nanowires coexist with PtGe clusters, which become liquid like above 1040 K. - Abstract: The structural and electronic properties of Pt induced nanowires on Ge(110) surfaces have been studied by scanning tunneling microscopy and low energy electron microscopy. The deposition of a sub-monolayer amount of Pt and subsequent annealing at 1100 (±30) K results into nanowires which are aligned along the densely packed [1–10] direction of the Ge(110) surface. With increasing Pt coverage the nanowires form densely packed arrays with separations of 1.1 ± 0.1 nm, 2.0 ± 0.1 nm and 3.4 ± 0.1 nm. Ge pentagons reside in the troughs for nanowire separations of 3.4 nm, however for smaller nanowire separations no pentagons are found. Spatially resolved scanning tunneling spectroscopy measurements reveal a filled electronic state at −0.35 eV. This electronic state is present in the troughs as well as on the nanowires. The −0.35 eV state has the strongest intensity on the pentagons. For Pt depositions exceeding two monolayers, pentagon free nanowire patches are found, that coexist with Pt/Ge clusters. Upon annealing at 1040 K these Pt/Ge clusters become liquid-like, indicating that we are dealing with eutectic Pt{sub 0.22}Ge{sub 0.78} clusters. Low energy electron microscopy videos reveal the formation and spinodal decomposition of these eutectic Pt/Ge clusters.

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification.

Science.gov (United States)

de Blois, Erik; Chan, Ho Sze; Roy, Kamalika; Krenning, Eric P; Breeman, Wouter A P

PET with 68 Ga from the TiO 2 - or SnO 2 - based 68 Ge/ 68 Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity ( 68 Ge vs. 68 Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts of 68 Ge activity is produced by eluting the 68 Ge/ 68 Ga generators and residues from PET chemistry. Since clearance level of 68 Ge activity in waste may not exceed 10 Bq/g, as stated by European Directive 96/29/EURATOM, our purpose was to reduce 68 Ge activity in solution from >10 kBq/g to <10 Bq/g; which implies the solution can be discarded as regular waste. Most efficient method to reduce the 68 Ge activity is by sorption of TiO 2 or Fe 2 O 3 and subsequent centrifugation. The required 10 Bq per mL level of 68 Ge activity in waste was reached by Fe 2 O 3 logarithmically, whereas with TiO 2 asymptotically. The procedure with Fe 2 O 3 eliminates ≥90% of the 68 Ge activity per treatment. Eventually, to simplify the processing a recirculation system was used to investigate 68 Ge activity sorption on TiO 2 , Fe 2 O 3 or Zeolite. Zeolite was introduced for its high sorption at low pH, therefore 68 Ge activity containing waste could directly be used without further interventions. 68 Ge activity containing liquid waste at different HCl concentrations (0.05-1.0 M HCl), was recirculated at 1 mL/min. With Zeolite in the recirculation system, 68 Ge activity showed highest sorption.

Predation as the primary selective force in recurrent evolution of gigantism in Poecilozonites land snails in Quaternary Bermuda

Science.gov (United States)

Olson, Storrs L.; Hearty, Paul J.

2010-01-01

During the last half million years, pulses of gigantism in the anagenetic lineage of land snails of the subgenus Poecilozonites on Bermuda were correlated with glacial periods when lower sea level resulted in an island nearly an order of magnitude larger than at present. During those periods, the island was colonized by large vertebrate predators that created selection pressure for large size and rapid growth in the snails. Extreme reduction in land area from rising seas, along with changes in ecological conditions at the onset of interglacial episodes, marked extinction events for large predators, after which snails reverted to much smaller size. The giant snails were identical in morphology during the last two glacials when the predators included a large flightless rail Rallus recessus (marine isotope stages (MIS) 4-2) and a crane Grus latipes and a duck Anas pachysceles (MIS 6). In a preceding glacial period (MIS 10), when the fauna also included the tortoise Hesperotestudo bermudae, the snails were not only large, but the shells were much thicker, presumably to prevent crushing by tortoises. Evolution of Poecilozonites provides an outstanding example of dramatic morphological change in response to environmental pressures in the absence of cladogenesis. PMID:20554560

Effect of two phyto hormone producer rhizobacteria on the bermuda grass growth response and tolerance to phenanthrene

International Nuclear Information System (INIS)

Guerrero-Zuniga, A.; Rojas-Contreras, A.; Rodriguez-Dorantes, A.; Montes-Villafan, S.

2009-01-01

Plant growth-promoting rhizobacteria (PGPR) are free-living bacteria that have the ability to relieve environmental stress in plants, increasing the plant growth potential. Of importance to phytoremediation, PGPR stimulate plant root development and enhance root growth.This study evaluated the growth response and the tolerance to phenanthrene of Bermuda grass: Cynodon dactylon inoculated with two phytohormone producer rhizobacteria: strains II and III, isolated from a contaminated soil with petroleum hydrocarbons. (Author)

Effect of two phyto hormone producer rhizobacteria on the bermuda grass growth response and tolerance to phenanthrene

Energy Technology Data Exchange (ETDEWEB)

Guerrero-Zuniga, A.; Rojas-Contreras, A.; Rodriguez-Dorantes, A.; Montes-Villafan, S.

2009-07-01

Plant growth-promoting rhizobacteria (PGPR) are free-living bacteria that have the ability to relieve environmental stress in plants, increasing the plant growth potential. Of importance to phytoremediation, PGPR stimulate plant root development and enhance root growth.This study evaluated the growth response and the tolerance to phenanthrene of Bermuda grass: Cynodon dactylon inoculated with two phytohormone producer rhizobacteria: strains II and III, isolated from a contaminated soil with petroleum hydrocarbons. (Author)

Depth, temperature, oxygen and salinity profile data from repetitive occupation of a hydrographic station off St. George's, Bermuda from 1954 through 1984 (NODC Accession 0000650)

Data.gov (United States)

National Oceanic and Atmospheric Administration, Department of Commerce — CTD, bottle, and other data were collected from the PANULIRUS and other platforms from repetitive occupations of a hydrographic station off St. George's, Bermuda....

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

Science.gov (United States)

Bonfanti, M.; Grilli, E.; Guzzi, M.; Virgilio, M.; Grosso, G.; Chrastina, D.; Isella, G.; von Känel, H.; Neels, A.

2008-07-01

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Ordered Arrays of SiGe Islands from Low-Energy PECVD

Directory of Open Access Journals (Sweden)

Chrastina D

2010-01-01

Full Text Available Abstract SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001 substrates were obtained by e-beam lithography (EBL and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8–3.2 nm of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01–0.1 nm s−1 and substrates temperatures (600–750°C, so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while μ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

Examining the Impact of a Public Health Message on Fish Consumption in Bermuda.

Directory of Open Access Journals (Sweden)

Catherine McLean Pirkle

Full Text Available In 2003 mean cord blood mercury concentrations in pregnant Bermudian women exceeded levels associated with adverse health outcomes in children. The principal mercury source was local fish species. Public health messages were developed suggesting pregnant women reduce consumption of fish species with higher mercury concentrations (e.g. swordfish, substituting species containing lower mercury concentrations, and elevated omega-3 fatty acids (e.g. anchovies. Recent evidence indicates mercury concentrations in Bermuda's pregnant women have fallen five- fold.Assess whether changes in women's fish eating patterns during pregnancy are consistent with the public health messaging. Determine who is making changes to their diet during pregnancy and why.Mixed methods study with a cross-sectional survey of 121 pregnant women, including 13 opened-ended interviews. Health system, social vulnerability, public health messaging, and socio-demographic variables were characterized and related to changes in fish consumption during pregnancy. Qualitative data were coded according to nutritional advice messages, comprehension of communication strategies, and sources of information.95% of women surveyed encountered recommendations about fish consumption during pregnancy. 75% reported modifying fish eating behaviors because of recommendations. Principal sources of information about fish consumption in pregnancy were health care providers and the Internet. 71% of women reported reducing consumption of large fish species with greater mercury levels, but 60% reported reduced consumption of smaller, low mercury fish. No participant mentioned hearing about the benefits of fish consumption. More frequent exposure to public health messages during pregnancy was associated with lower reported consumption. Bermudian born women were less likely to reduce consumption of large fish species during pregnancy.In Bermuda, public health messages advocating reduced consumption of larger

The Multilateral Disarmament Process. Conference on the United Nations of the Next Decade (16th, Warwick, Bermuda, June 21-26, 1981).

Science.gov (United States)

Stanley Foundation, Muscatine, IA.

This is a report of a conference held in Bermuda in 1981 to discuss a multilateral approach to disarmament. The conference was an informal, off-the-record exchange of ideas and opinions among 24 diplomats and scholars from 18 countries and two international agencies. Participants considered current disarmament concepts, assessed UN disarmament…

METHODS OF TAXATION IN THE TAX HAVENS. EXAMPLES OF TAXATION IN THE BAHAMAS, BERMUDA AND THE CAYMAN ISLANDS

Directory of Open Access Journals (Sweden)

ENEA CONSTANTIN

2015-12-01

Full Text Available We should never trust appearances: "the drum, with all the noise it makes is not only filled with wind"[1]. This old oriental proverb perfectly illustrates our proposal regarding the "true false" tax havens. Only at the beginning of this century, learned before firms to exercise their activity in the national territory, returned to international trade. The continuous search for new outlets to escape the growing production, export them first and then they were implanted overseas sales platforms and then installing production. Zero Haven sites or havens with zero tax consisting essentially of small economies, the British colonies (Cayman Islands, British Virgin Islands, dependent territories of the Commonwealth (Bermuda or territories became independent (Antigua, Bahamas 1963 or Vanuatu 1980. Our study will analyze tax havens most common: Bahamas, Bermuda or the Cayman Islands, where we find all models of reception that can be viewed in other areas zero-haven: International Business Companies (Antigua, the Virgin Islands, Nevis exemption schemes to insurance companies or banks (Barbados, Vanuatu. The subject of tax evasion subject of much debate, targeting both the domestic economic space and the world. Unlike their concerns globally, domestic concerns to reduce tax evasion resumes, especially on taxation of small businesses, avoiding knowingly scope of tax havens.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

Science.gov (United States)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Summary of the 70 GeV Booster Group

International Nuclear Information System (INIS)

Makdisi, Y.; Khiari, F.

1985-06-01

The energy range of the 70 GeV SSC booster makes it difficult to employ a single technique for preserving the beam polarization. Results of DEPOL calculations show that the expected resonance strengths are below the .5 x 10 -1 level, which poses no problem for resonance jumping. It was found that a single adiabatically energized Siberian snake will not significantly depolarize the beam. Thus one good solution to the mixing problem is that the snake magnets be energized during the acceleration cycle reaching maximum operating value at 20 GeV, where they take over the resonance jumping role. The possibility of adiabatically energizing two snakes was found to be feasible

Magnetic properties in the vortex state of Pr1-xNdxPt4Ge12 and PrPt3.88Fe0.12Ge12 superconductors

Science.gov (United States)

Chandra, L. S. Sharath; Chattopadhyay, M. K.

2018-03-01

We report the temperature and magnetic field dependence of magnetization of Pr1-xNdxPt4Ge12 (x = 0, 0.05 and 0.1) and PrPt3.88Fe0.12Ge12 below 10 K and up to 2 T magnetic field. When compared to the parent PrPt4Ge12, while the critical current density and flux pinning properties are enhanced in the Pr1-xNdxPt4Ge12 samples, they are considerably diminished in the PrPt3.88Fe0.12Ge12 sample. We argue that the observed changes are related to the way the substituting atoms at different crystallographic sites influence the superconductivity in these Germanide skutterudites.

Multiplicity correlations in the forward and backward hemispheres in the center of mass in bar pp and pp interactions at 32 GeV/c

International Nuclear Information System (INIS)

Bravina, L.V.; Amelin, N.S.; Bogolyubskii, M.Y.; Bumazhnov, V.A.; Vinitskii, A.A.; Ermolov, P.F.; Zhautykov, B.O.; Zabrodin, E.E.; Kiryunin, A.E.; Klochkov, M.A.; Kotova, A.I.; Kruglov, N.A.; Levitskii, M.S.; Lukina, O.Y.; Minaenko, A.A.; Moiseev, A.M.; Murzin, V.S.; Proskuryakov, A.S.; Rizatdinova, F.K.; Sarycheva, L.I.; Smirnova, L.N.; Starchenko, E.A.; Ukhanov, M.N.; Chekulaev, S.V.

1989-01-01

A rise in the average multiplicity of particles in one hemisphere in the c.m.s. of bar pp and pp interactions with energy (s) 1/2 =7.86 GeV is observed with increase of the number of particles in the other hemisphere. The correlation parameter reaches b=0.19±0.01 and 0.10±0.02 in inelastic bar pp and pp interactions respectively. The observed correlations are reproduced in the quark-gluon string model

High (1 1 1) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

International Nuclear Information System (INIS)

Wang, Peng; Li, Xin; Liu, Hanhui; Lai, Shumei; Chen, Yuye; Xu, Yihong; Chen, Songyan; Li, Cheng; Huang, Wei; Tang, Dingliang

2015-01-01

High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlO x interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.

Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers.

Science.gov (United States)

Jiang, Jialin; Sun, Junqiang; Gao, Jianfeng; Zhang, Ruiwen

2017-10-30

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

Inclusive photon production in pA and AA collisions at 200 GeV/u

International Nuclear Information System (INIS)

Akesson, T.; Atherton, H.; Beker, H.; Bettoni, D.; Boeggild, H.; Dederichs, K.; Devenish, R.C.E.; En'yo, H.; Fabjan, C.W.; Hedberg, V.; Mazzoni, M.A.; Piuz, F.; Poulard, G.; Price, M.; Sandor, L.; Schukraft, J.; Sekimoto, M.; Seman, M.; Sletten, H.; Thodberg, H.H.; Veenhoff, R.; Wigmans, R.; Almehed, S.; Haglund, R.; Jarlskog, G.; Johansson, S.; Loerstad, B.; Mjoernmark, U.; Angelis, A.L.S.; Dodd, J.R.; Esten, M.J.; McCubbin, M.L.; Armenise, N.; Muciaccia, M.T.; Simone, S.; Aubry, P.; Beaudoin, G.; Beaulieu, J.M.; Depommier, P.; Lounis, A.; Bartels, H.W.; Drees, A.; Fischer, P.; Glaessel, P.; Goerlach, U.; Hoelscher, A.; Kroth, V.; Neubert, M.; Pfeiffer, A.; Soltani, J.; Specht, H.J.; Benary, O.; Dagan, S.; Heifetz, R.; Oren, Y.; Blevis, I.; Fraenkel, Z.; Tserruya, I.; Cleland, W.; Clemen, M.; Collick, B.; Murray, M.; Park, Y.M.; Thompson, J.; Corriveau, F.; Hamel, L.A.; Lamarche, F.; Leroy, C.; Mazzucato, E.; Sirois, Y.; Yepes, P.; Dell'Uomo, S.; Di Liberto, S.; Meddi, F.; Rosa, G.; DiGiacomo, N.; Hecke, H. van; Jacak, B.; McGaughey, P.; Sondheim, W.; Sunier, J.; Dogolshein, B.; Smirnov, S.; Tcherniatin, V.; Erlandsson, B.; Nilsson, S.; Sellden, B.; Gaidot, A.; Gibrat-Debu, F.; London, G.; Pansart, J.P.; Vasseur, G.; Lissauer, D.; McCubbin, N.A.; Muraviev, S.; Shmeleva, A.; Tikhomirov, V.; Sidorov, V.

1990-01-01

Inclusive photon p perpendicular to spectra were measured with 200 GeV/u proton, 16 O and 32 S beams on W and Pt targets, using a conversion method. The measurement of charged pions in the same apparatus allows a comparison of the γ data with the expected γ's from hadronic decays (π 0 , η, η', ω). In all data sets, no deviation from the expected shape is observed in the range of 0.1 perpendicular to perpendicular to >0.1 GeV/c and p perpendicular to >0.6 GeV/c. (orig.)

Is there Δ-matter at 1 GeV/nucleon?

International Nuclear Information System (INIS)

Bass, S.A.; Hofmann, M.; Hartnack, C.; Nantes Univ.; Stoecker, H.; Greiner, W.

1994-01-01

We investigate the possibility of creating a new form of highly excited nuclear matter, Δ-matter, in heavy ion collisions at 1 GeV/nucleon. At this incident energy, which is accessible through the SIS accelerator facility, enough Δ-resonances are produced to show collective effects. Maximum densities for the resonances around 50% ground state density of nuclear matter are reached. However, the multiplicity of Δ-resonances reaches only 20% of the baryon multiplicity and therefore is not high enough to justify the term Δ-matter. (orig.)

Understanding the Steric Height Long Term Variability at the Bermuda Atlantic Time-Series Study (BATS) Site with a Neutral Density Approach

Science.gov (United States)

Goncalves Neto, A.; Johnson, R. J.; Bates, N. R.

2016-02-01

Rising sea level is one of the main concerns for human life in a scenario with global atmosphere and ocean warming, which is of particular concern for oceanic islands. Bermuda, located in the center of the Sargasso Sea, provides an ideal location to investigate sea level rise since it has a long term tide gauge (1933-present) and is in close proximity to deep ocean time-series sites, namely, Hydrostation `S' (1954-present) and the Bermuda Atlantic Time-Series Study site (1988-present). In this study, we use the monthly CTD deep casts at BATS to compute the contribution of steric height (SH) to the local sea surface height (SSH) for the past 24 years. To determine the relative contribution from the various water masses we first define 8 layers (Surface Layer, Upper Thermocline, Subtropical Mode-Water, Lower Thermocline, Antarctic Intermediate Water, Labrador Sea Water, Iceland-Scotland Overflow Water, Denmark Strait Overflow Water) based on neutral density criteria for which SH is computed. Additionally, we calculate the thermosteric and halosteric components for each of the defined neutral density layers. Surprisingly, the results show that, despite a 3.3mm/yr sea level rise observed at the Bermuda tide gauge, the steric contribution to the SSH at BATS has decreased at a rate of -1.1mm/yr during the same period. The thermal component is found to account for the negative trend in the steric height (-4.4mm/yr), whereas the halosteric component (3.3mm/yr) partially compensates the thermal signal and can be explained by an overall cooling and freshening at the BATS site. Although the surface layer and the upper thermocline waters are warming, all the subtropical and polar water masses, which represent most of the local water column, are cooling and therefore drive the overall SH contribution to the local SSH. Hence, it suggests that the mass contribution to the local SSH plays an important role in the sea level rise, for which we investigate with GRACE data.

Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

International Nuclear Information System (INIS)

Sakata, T.; Makihara, K.; Murakami, H.; Higashi, S.; Miyazaki, S.

2007-01-01

We have studied the Ge crystalline nucleation and film growth on quartz substrate at 250 deg. C from inductively-coupled plasma (ICP) of GeH 4 diluted with H 2 . The ICP was generated by supplying 60 MHz power to an external single-turn antenna which was placed on a quartz plate window of a stainless steel reactor and parallel to the substrate. We have found that the growth rate is significantly increased when the preferential growth of the (110) plane becomes pronounced after the formation of randomly-oriented crystalline network. The (110) oriented Ge films, of which average crystallinity is as high as 70%. The integrated intensity ratio of TO phonons in crystalline phase to those in disordered phase, were grown at a rate of ∼ 4.0 nm/s after the formation of amorphous incubation layer with a thickness of ∼ 0.1 μm on quartz

Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

International Nuclear Information System (INIS)

Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

2014-01-01

Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

Atomic-scale Ge diffusion in strained Si revealed by quantitative scanning transmission electron microscopy

Science.gov (United States)

Radtke, G.; Favre, L.; Couillard, M.; Amiard, G.; Berbezier, I.; Botton, G. A.

2013-05-01

Aberration-corrected scanning transmission electron microscopy is employed to investigate the local chemistry in the vicinity of a Si0.8Ge0.2/Si interface grown by molecular-beam epitaxy. Atomic-resolution high-angle annular dark field contrast reveals the presence of a nonuniform diffusion of Ge from the substrate into the strained Si thin film. On the basis of multislice calculations, a model is proposed to quantify the experimental contrast, showing that the Ge concentration in the thin film reaches about 4% at the interface and decreases monotonically on a typical length scale of 10 nm. Diffusion occurring during the growth process itself therefore appears as a major factor limiting the abruptness of interfaces in the Si-Ge system.

Electrical characteristics of SiGe-base bipolar transistors on thin-film SOI substrates

International Nuclear Information System (INIS)

Liao, Shu-Hui; Chang, Shu-Tong

2010-01-01

This paper, based on two-dimensional simulations, provides a comprehensive analysis of the electrical characteristics of the Silicon germanium (SiGe)-base bipolar transistors on thin-film siliconon-insulator (SOI) substrates. The impact of the buried oxide thickness (T OX ), the emitter width (W E ), and the lateral distance between the edge of the intrinsic base and the reach-through region (L col ) on both the AC and DC device characteristics was analyzed in detail. Regarding the DC characteristics, the simulation results suggest that a thicker T OX gives a larger base-collector breakdown voltage (BV CEO ), whereas reducing the T OX leads to an enhanced maximum electric field at the B-C junction. As for the AC characteristics, cut-off frequency (f T ) increases slightly with increasing buried oxide thickness and finally saturates to a constant value when the buried oxide thickness is about 0.15 μm. The collector-substrate capacitance (C CS ) decreases with increasing buried oxide thickness while the maximum oscillation frequency (f max ) increases with increasing buried oxide thickness. Furthermore, the impact of self-heating effects in the device was analyzed in various areas. The thermal resistance as a function of the buried oxide thickness indicates that the thermal resistance of the SiGe-base bipolar transistor on a SOI substrate is slightly higher than that of a bulk SiGe-base bipolar transistor. The thermal resistance is reduced by ∼37.89% when the emitter width is increased by a factor of 5 for a fixed buried oxide thickness of 0.1 μm. All the results can be used to design and optimize SiGe-base bipolar transistors on SOI substrates with minimum thermal resistance to enhance device performance.

Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

Science.gov (United States)

Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

2017-09-01

Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

Science.gov (United States)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Inner heliosphere spatial gradients of GCR protons and alpha particles in the low GeV range

Science.gov (United States)

Gieseler, J.; Boezio, M.; Casolino, M.; De Simone, N.; Di Felice, V.; Heber, B.; Martucci, M.; Picozza, P.

2013-12-01

The spacecraft Ulysses was launched in October 1990 in the maximum phase of solar cycle 22, reached its final, highly inclined (80.2°) Keplerian orbit around the Sun in February 1992, and was finally switched off in June 2009. The Kiel Electron Telescope (KET) aboard Ulysses measures electrons from 3 MeV to a few GeV and protons and helium in the energy range from 6 MeV/nucleon to above 2 GeV/nucleon. In order to investigate the radial and latitudinal gradients of galactic cosmic rays (GCR), it is essential to know their intensity variations for a stationary observer in the heliosphere because the Ulysses measurements reflect not only the spatial but also the temporal variation of the energetic particle intensities. This was accomplished in the past with the Interplanetary Monitoring Platform-J (IMP 8) until it was lost in 2006. Fortunately, the satellite-borne experiment PAMELA (Payload for Antimatter Matter Exploration and Light-nuclei Astrophysics) was launched in June 2006 and can be used as a reliable 1 AU baseline for measurements of the KET aboard Ulysses. With these tools at hand, we have the opportunity to determine the spatial gradients of GCR protons and alpha particles at about 0.1 to 1 GeV/n in the inner heliosphere during the extended minimum of solar cycle 23. We then compare these A0 cycle.

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Complex magnetic properties and large magnetocaloric effects in RCoGe (R=Tb, Dy compounds

Directory of Open Access Journals (Sweden)

Yan Zhang

2018-05-01

Full Text Available Complicated magnetic phase transitions and Large magnetocaloric effects (MCEs in RCoGe (R=Tb, Dy compounds have been reported in this paper. Results show that the TbCoGe compounds have a magnetic phase transition from antiferromagnetic to paramagnetic (AFM-PM at TN∼16 K, which is close to the value reported by neutron diffraction. The DyCoGe compound undergoes complicated phase changes from 2 K up to 300 K. The peak at 10 K displays a phase transition from antiferromagnetic to ferromagnetic (AFM-FM. In particular, a significant ferromagnetic to paramagnetic (FM-PM phase transition was found at the temperature as high as 175 K and the cusp becomes more abrupt with the magnetic field increasing from 0.01 T to 0.1 T. The maximum value of magnetic entropy change of TbCoGe and DyCoGe compounds achieve 14.5 J/kg K and 11.5 J/kg K respectively for a field change of 0-5 T. Additionally, the correspondingly considerable refrigerant capacity value of 260 J/kg and 242 J/kg are also obtained respectively, suggesting that both TbCoGe and DyCoGe compounds could be considered as good candidates for low temperature magnetic refrigerant.

The European 400 GeV proton synchrotron

CERN Document Server

Middelkoop, Willem Cornelis

1977-01-01

On 19th February 1971, CERN decided to build a super proton synchrotron at a cost of 1150*10/sup 6/ Swiss francs. The design target of 400 GeV with a beam intensity of 10/sup 13/ protons/pulse was reached on the 4th of November 1976 within the original budget, allowing for inflation. The technical aspects of the SPS are reviewed, together with operating experience since May 1976. (2 refs).

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

Science.gov (United States)

Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

2017-12-01

Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

International Nuclear Information System (INIS)

Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-01-01

Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

Structure of 78Ge from the 76Ge(t,p)78Ge reaction

International Nuclear Information System (INIS)

Ardouin, D.; Lebrun, C.; Guilbault, F.; Remaud, B.; Vergnes, M.N.; Rotbard, G.; Kumar, K.

1978-01-01

The 76 Ge(t,p) 78 Ge reaction has been performed at a bombarding energy of 17 MeV. Thirteen excited states below 3 MeV excitation are reported with Jsup(π) values obtained by comparison to DWBA analysis. A comparison to a dynamical deformation theory is made and the results suggest 78 Ge is a transitional nucleus nearing spherical shape due to the proximity of the N-50 closed shell

FERMI LARGE AREA TELESCOPE OBSERVATIONS OF THE SUPERNOVA REMNANT G8.7–0.1

International Nuclear Information System (INIS)

Ajello, M.; Allafort, A.; Bechtol, K.; Berenji, B.; Blandford, R. D.; Bloom, E. D.; Borgland, A. W.; Buehler, R.; Cameron, R. A.; Baldini, L.; Bellazzini, R.; Bregeon, J.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Buson, S.; Bonamente, E.; Brigida, M.; Bruel, P.; Caliandro, G. A.

2012-01-01

We present a detailed analysis of the GeV gamma-ray emission toward the supernova remnant (SNR) G8.7–0.1 with the Large Area Telescope (LAT) on board the Fermi Gamma-ray Space Telescope. An investigation of the relationship between G8.7–0.1 and the TeV unidentified source HESS J1804–216 provides us with an important clue on diffusion process of cosmic rays if particle acceleration operates in the SNR. The GeV gamma-ray emission is extended with most of the emission in positional coincidence with the SNR G8.7–0.1 and a lesser part located outside the western boundary of G8.7–0.1. The region of the gamma-ray emission overlaps spatially connected molecular clouds, implying a physical connection for the gamma-ray structure. The total gamma-ray spectrum measured with LAT from 200 MeV-100 GeV can be described by a broken power-law function with a break of 2.4 ± 0.6 (stat) ± 1.2 (sys) GeV, and photon indices of 2.10 ± 0.06 (stat) ± 0.10 (sys) below the break and 2.70 ± 0.12 (stat) ± 0.14 (sys) above the break. Given the spatial association among the gamma rays, the radio emission of G8.7–0.1, and the molecular clouds, the decay of π 0 s produced by particles accelerated in the SNR and hitting the molecular clouds naturally explains the GeV gamma-ray spectrum. We also find that the GeV morphology is not well represented by the TeV emission from HESS J1804–216 and that the spectrum in the GeV band is not consistent with the extrapolation of the TeV gamma-ray spectrum. The spectral index of the TeV emission is consistent with the particle spectral index predicted by a theory that assumes energy-dependent diffusion of particles accelerated in an SNR. We discuss the possibility that the TeV spectrum originates from the interaction of particles accelerated in G8.7–0.1 with molecular clouds, and we constrain the diffusion coefficient of the particles.

Large roomtemperature magnetocaloric effect with negligible magnetic hysteresis losses in Mn1-xVxCoGe alloys

International Nuclear Information System (INIS)

Ma, S.C.; Zheng, Y.X.; Xuan, H.C.; Shen, L.J.; Cao, Q.Q.; Wang, D.H.; Zhong, Z.C.; Du, Y.W.

2012-01-01

The magnetic and magnetocaloric properties have been investigated in a series of Mn 1-x V x CoGe (x=0.01, 0.02, 0.03, and 0.05) alloys. The substitution of V for Mn reduces the structural transformation temperature of MnCoGe alloy effectively and results in a second-order magnetic transition in Mn 0.95 V 0.05 CoGe alloys. Large room temperature magnetocaloric effect and almost zero magnetic hysteresis losses are simultaneously achieved in the alloys with x=0.01, 0.02, and 0.03. The reasons for the negligible magnetic hysteresis losses and the potential application for the roomtemperature magnetic refrigeration are discussed. - Highlights: → V-substitution for Mn reduces the structural transformation temperature of MnCoGe. → FM-PM transition presents the second-order nature in Mn0.95V0.05CoGe. → The first-order FM-PM transitions are observed for alloys with x=0.01, 0.02, and 0.03. → Large room temperature MCEs are achieved in these alloys. → Negligible magnetic HL is achieved for these alloys simultaneously.

Oxygen transport and GeO2 stability during thermal oxidation of Ge

Science.gov (United States)

da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

2012-05-01

Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

International Nuclear Information System (INIS)

Prokofieva, Violetta K.; Pavlova, Lydia M.

2014-01-01

Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

Uniaxially stressed Ge:Ga and Ge:Be

Energy Technology Data Exchange (ETDEWEB)

Dubon, Jr., Oscar Danilo [Univ. of California, Berkeley, CA (United States)

1992-12-01

The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

Comprehensive thermodynamic description of the quasiternary system PbTe-GeTe-SnTe

International Nuclear Information System (INIS)

Yashina, Lada V.; Leute, Volkmar; Shtanov, Vladimir I.; Schmidtke, Heinrich M.; Neudachina, Vera S.

2006-01-01

The equilibrium phase diagram of the quasiternary system PbTe-GeTe-SnTe was studied experimentally in the ranges of spinodal demixing and (solid + liquid) equilibrium by means of X-ray diffraction (XRD), electron microprobe analysis (EMA) and differential thermal analysis (DTA). A model description of the phase diagram was done on the base of composition dependent interaction parameters, which were determined for the solid and the liquid phases. The interaction parameters for the quasibinary systems were recalculated in order to reach better correlation between all experimental data. It was shown that the quasiternary phase diagram can be principally described using the interaction parameters for the quasibinary subsystems, but an additional ternary interaction parameter has also to be considered. The local structure of the quasiternary solid solution is described by a four-particle cluster model. Due to the tendency of the solid solution to demix, the probability of the (GeGeGe)Te cluster was found to be higher and that of the (PbGeGe)Te cluster to be lower than it is expected for the purely statistical distribution of the clusters

Simulation of hole-mobility in doped relaxed and strained Ge layers

Science.gov (United States)

Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

2010-11-01

As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

GeV Detection of HESS J0632+057

Energy Technology Data Exchange (ETDEWEB)

Li, Jian; Torres, Diego F.; Wilhelmi, Emma de Oña [Institute of Space Sciences (CSIC–IEEC), Campus UAB, Carrer de Magrans s/n, E-08193 Barcelona (Spain); Cheng, K.-S. [Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China); Kretschmar, Peter [European Space Astronomy Centre (ESA/ESAC), Science Operations Department, Villanueva de la Cañada (Madrid) (Spain); Hou, Xian [Yunnan Observatories, Chinese Academy of Sciences, 396 Yangfangwang, Guandu District, Kunming 650216 (China); Takata, Jumpei, E-mail: jian@ice.csic.es [School of Physics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2017-09-10

HESS J0632+057 is the only gamma-ray binary that has been detected at TeV energies, but not at GeV energies yet. Based on nearly nine years of Fermi Large Area Telescope (LAT) Pass 8 data, we report here on a deep search for the gamma-ray emission from HESS J0632+057 in the 0.1–300 GeV energy range. We find a previously unknown gamma-ray source, Fermi J0632.6+0548, spatially coincident with HESS J0632+057. The measured flux of Fermi J0632.6+0548 is consistent with the previous flux upper limit on HESS J0632+057 and shows variability that can be related to the HESS J0632+057 orbital phase. We propose that Fermi J0632.6+0548 is the GeV counterpart of HESS J0632+057. Considering the Very High Energy spectrum of HESS J0632+057, a possible spectral turnover above 10 GeV may exist in Fermi J0632.6+0548, as appears to be common in other established gamma-ray binaries.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

Science.gov (United States)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Ge-Au eutectic bonding of Ge (100) single crystals

International Nuclear Information System (INIS)

Knowlton, W.B.; Beeman, J.W.; Emes, J.H.; Loretto, D.; Itoh, K.M.; Haller, E.E.

1993-01-01

The author present preliminary results on the eutectic bonding between two (100) Ge single crystal surfaces using thin films of Au ranging from 900 angstrom/surface to 300 angstrom/surface and Pd (10% the thickness of Au). Following bonding, plan view optical microscopy (OM) of the cleaved interface of samples with Au thicknesses ≤ 500 angstrom/surface show a eutectic morphology more conducive to phonon transmission through the bond interface. High resolution transmission electron microscopy (HRTEM) cross sectional interface studies of a 300 angstrom/surface Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity of the Ge is apparent through the interface. TEM studies also reveal heteroepitaxial growth of Au with a Au-Ge lattice mismatch of less than 2%. Eutectic bonds with 200 angstrom/surface Au have been attained with characterization pending. An optical polishing technique for Ge has been optimized to insure intimate contact between the Ge surfaces prior to bonding. Interferometry analysis of the optically polished Ge surface shows that surface height fluctuations lie within ±150 angstrom across an interval of lmm. Characterization of phonon transmission through the interface is discussed with respect to low temperature detection of ballistic phonons

Energy levels of germanium, Ge I through Ge XXXII

International Nuclear Information System (INIS)

Sugar, J.; Musgrove, A.

1993-01-01

Atomic energy levels of germanium have been compiled for all stages of ionization for which experimental data are available. No data have yet been published for Ge VIII through Ge XIII and Ge XXXII. Very accurate calculated values are compiled for Ge XXXI and XXXII. Experimental g-factors and leading percentages from calculated eigenvectors of levels are given. A value for the ionization energy, either experimental when available or theoretical, is included for the neutral atom and each ion. section

Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

International Nuclear Information System (INIS)

Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

2001-01-01

The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

Science.gov (United States)

Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

2013-06-01

Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

Extreme IR absorption in group IV-SiGeSn core-shell nanowires

Science.gov (United States)

Attiaoui, Anis; Wirth, Stephan; Blanchard-Dionne, André-Pierre; Meunier, Michel; Hartmann, J. M.; Buca, Dan; Moutanabbir, Oussama

2018-06-01

Sn-containing Si and Ge (Ge1-y-xSixSny) alloys are an emerging family of semiconductors with the potential to impact group IV material-based devices. These semiconductors provide the ability to independently engineer both the lattice parameter and bandgap, which holds the premise to develop enhanced or novel photonic and electronic devices. With this perspective, we present detailed investigations of the influence of Ge1-y-xSixSny layers on the optical properties of Si and Ge based heterostructures and nanowires. We found that by adding a thin Ge1-y-xSixSny capping layer on Si or Ge greatly enhances light absorption especially in the near infrared range, leading to an increase in short-circuit current density. For the Ge1-y-xSixSny structure at thicknesses below 30 nm, a 14-fold increase in the short-circuit current is observed with respect to bare Si. This enhancement decreases by reducing the capping layer thickness. Conversely, decreasing the shell thickness was found to improve the short-circuit current in Si/Ge1-y-xSixSny and Ge/Ge1-y-xSixSny core/shell nanowires. The optical absorption becomes very important by increasing the Sn content. Moreover, by exploiting an optical antenna effect, these nanowires show extreme light absorption, reaching an enhancement factor, with respect to Si or Ge nanowires, on the order of 104 in Si/Ge0.84Si0.04Sn0.12 and 12 in Ge/Ge0.84Si0.04Sn0.12. Furthermore, we analyzed the optical response after the addition of a dielectric layer of Si3N4 to the Si/Ge1-y-xSixSny core-shell nanowire and found approximatively a 50% increase in the short-circuit current density for a dielectric layer of thickness equal to 45 nm and both a core radius and a shell thickness greater than 40 nm. The core-shell optical antenna benefits from a multiplication of enhancements contributed by leaky mode resonances in the semiconductor part and antireflection effects in the dielectric part.

Molecules for materials: germanium hydride neutrals and anions. Molecular structures, electron affinities, and thermochemistry of GeHn/GeHn- (n = 0-4) and Ge2Hn/Ge2Hn(-) (n = 0-6).

Science.gov (United States)

Li, Qian-Shu; Lü, Rui-Hua; Xie, Yaoming; Schaefer, Henry F

2002-12-01

The GeH(n) (n = 0-4) and Ge(2)H(n) (n = 0-6) systems have been studied systematically by five different density functional methods. The basis sets employed are of double-zeta plus polarization quality with additional s- and p-type diffuse functions, labeled DZP++. For each compound plausible energetically low-lying structures were optimized. The methods used have been calibrated against a comprehensive tabulation of experimental electron affinities (Chemical Reviews 102, 231, 2002). The geometries predicted in this work include yet unknown anionic species, such as Ge(2)H(-), Ge(2)H(2)(-), Ge(2)H(3)(-), Ge(2)H(4)(-), and Ge(2)H(5)(-). In general, the BHLYP method predicts the geometries closest to the few available experimental structures. A number of structures rather different from the analogous well-characterized hydrocarbon radicals and anions are predicted. For example, a vinylidene-like GeGeH(2) (-) structure is the global minimum of Ge(2)H(2) (-). For neutral Ge(2)H(4), a methylcarbene-like HGë-GeH(3) is neally degenerate with the trans-bent H(2)Ge=GeH(2) structure. For the Ge(2)H(4) (-) anion, the methylcarbene-like system is the global minimum. The three different neutral-anion energy differences reported in this research are: the adiabatic electron affinity (EA(ad)), the vertical electron affinity (EA(vert)), and the vertical detachment energy (VDE). For this family of molecules the B3LYP method appears to predict the most reliable electron affinities. The adiabatic electron affinities after the ZPVE correction are predicted to be 2.02 (Ge(2)), 2.05 (Ge(2)H), 1.25 (Ge(2)H(2)), 2.09 (Ge(2)H(3)), 1.71 (Ge(2)H(4)), 2.17 (Ge(2)H(5)), and -0.02 (Ge(2)H(6)) eV. We also reported the dissociation energies for the GeH(n) (n = 1-4) and Ge(2)H(n) (n = 1-6) systems, as well as those for their anionic counterparts. Our theoretical predictions provide strong motivation for the further experimental study of these important germanium hydrides. Copyright 2002 Wiley

Solute trapping of Ge in Al

International Nuclear Information System (INIS)

Smith, P.M.; West, J.A.; Aziz, M.J.

1992-01-01

This paper reports on partitioning during rapid solidification of dilute Al-Ge alloys. Implanted thin films of Al have been pulsed-laser melted to obtain solidification at velocities in the range of 0.01 ms to 3.3 m/s, as measured by the transient conductance technique. Previous and subsequent Rutherford Backscattering depth profiling of the Ge solute in the Al alloys has been used to determine the nonequilibrium partition coefficient k. A significant degree of lateral film growth during solidification confines determination of k to the placing of an upper bound of 0.22 on k for solidification velocities in this range. The authors place a lower limit of 10 m/s on the diffusive velocity, which locates the transition from solute partitioning to solute trapping in the Continuous Growth Model

Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

DEFF Research Database (Denmark)

Kilpeläinen, S.; Tuomisto, F.; Slotte, J.

2011-01-01

Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb] = 2 × 1018 and 2 × 1019 cm−3) Si0.8Ge0.2 was studied with positron annihilation spectroscopy in Doppler broadening mode. The study was performed by annealing the samples both isochronally and isothermally. Defect...... evolution was observed at the temperature range 450–650 K. Both treatments were shown to induce changes in the chemical surroundings of the E-centers via introduction of Ge near the defects. Moreover, Sb was found to hinder these changes by stabilizing the E-centers and thus preventing them from finding Ge....... The stable state reached after the anneals was found to differ from that measured from an as-grown sample. This difference was deemed to be the result of Ge gathering in small clusters during the annealing thus breaking the initially random Ge distribution....

Comparative physiological and proteomic analyses reveal the actions of melatonin in the reduction of oxidative stress in Bermuda grass (Cynodon dactylon (L). Pers.).

Science.gov (United States)

Shi, Haitao; Wang, Xin; Tan, Dun-Xian; Reiter, Russel J; Chan, Zhulong

2015-08-01

The fact of melatonin as an important antioxidant in animals led plant researchers to speculate that melatonin also acts in the similar manner in plants. Although melatonin has significant effects on alleviating stress-triggered reactive oxygen species (ROS), the involvement of melatonin in direct oxidative stress and the underlying physiological and molecular mechanisms remain unclear in plants. In this study, we found that exogenous melatonin significantly alleviated hydrogen peroxide (H2O2)-modulated plant growth, cell damage, and ROS accumulation in Bermuda grass. Additionally, 76 proteins significantly influenced by melatonin during mock or H2O2 treatment were identified by gel-free proteomics using iTRAQ (isobaric tags for relative and absolute quantitation). Metabolic pathway analysis showed that several pathways were markedly enhanced by melatonin and H2O2 treatments, including polyamine metabolism, ribosome pathway, major carbohydrate metabolism, photosynthesis, redox, and amino acid metabolism. Taken together, this study provides more comprehensive insights into the physiological and molecular mechanisms of melatonin in Bermuda grass responses to direct oxidative stress. This may relate to the activation of antioxidants, modulation of metabolic pathways, and extensive proteome reprograming. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Evidence for a narrow peak in $K0_{S}\\pi \\pm \\pi^{+}pi^{-}$ at 2.6 GeV in 12 GeV/c $\\overline{p}$p interactions

CERN Document Server

Apostolakis, Alcibiades J; Caso, Carlo; Goldschmidt-Clermont, Yves; Pape, L; Porte, J P; Stergiou, Athanase; Tallini, Bruno; Vasileiadis, G; Wenninger, Horst; Grard, G; Henri, V P; Herquet, P; Kesteman, J; Banerjee, S; Barnham, Keith W J; Beuselinck, R; Butterworth, Ian; Campbell, J Ronald; Chaff, J A; Mermikides, Michael E; Miller, D B; Bertrand, D; Johnson, D; Lemonne, J; Renton, P B; Wickens, J H; Van den Bogaert, F; Daugeras, B Y; Jacholkowska, A

1977-01-01

The authors report the evidence for a narrow charged peak (5.5 s.d.), which they suggest calling the I, in the 6-prong-V/sup 0/ topology of pp interactions at 12 GeV/c. The mass, width and the product of cross section sigma /sub I/ times the branching ratio BR into the final state (K/sub s//sup 0/ pi /sup +or-/ pi /sup +/ pi /sup -/) are found to be: M/sub I/=2.60+or-0.01 GeV/c/sup 2/, Gamma /sub I/GeV /c/sup 2/, sigma /sub I/.BR approximately=20 mu barn. (5 refs).

Comparative study of the growth and carbon sequestration potential of Bermuda grass in industrial and urban areas

Directory of Open Access Journals (Sweden)

Usman Ali

2018-06-01

Full Text Available Climate change is a global phenomenon occurring throughout the world. Greenhouse gases (GHGs especially carbon dioxide (CO2 considered to be the major culprit to bring these changes. So, carbon (C sequestration by any mean could be useful to reduce the CO2 level in atmosphere. Turf grasses have the ability to sequester C and minimize the effects of GHGs on the environment. In order to study that how turf grasses can help in C sequestration, Bermuda grass (Cynodon dactylon was grown both at industrial and urban location and its effect on C storage were assessed by soil and plant analysis. Dry deposition of ammonium and nitrate was maximum at both locations through the year. However wet deposition was highest during the months of high rainfall. It was examined through soil analysis that soil organic matter, soil C and nitrogen in both locations increased after second mowing of grass. However, soil pH 6.68 in urban and 7.00 in industrial area and EC 1.86 dS/m in urban and 1.90 dS/m in industrial area decreased as the grass growth continue. Soil fresh weight (27.6 g in urban and (27.28 g industrial area also decreased after first and second mowing of grass. The C levels in plant dry biomass also increased which showed improved ability of plant to uptake C from the soil and store it. Similarly, chlorophyll contents were more in industrial area compared to urban area indicates the positive impact of high C concentration. Whereas stomatal conductance was reduced in high C environment to slow down respiration process. Hence, from present study it can be concluded that the Bermuda grass could be grown in areas with high C concentration in atmosphere for sequestrating C in soil.

Measurement of the Z+b-jet cross-section in pp collisions at $\\sqrt{s}=7{\\mathrm{\\,Te\\kern -0.1em V}}$ in the forward region

CERN Document Server

Aaij, Roel; Adinolfi, Marco; Affolder, Anthony; Ajaltouni, Ziad; Akar, Simon; Albrecht, Johannes; Alessio, Federico; Alexander, Michael; Ali, Suvayu; Alkhazov, Georgy; Alvarez Cartelle, Paula; Alves Jr, Antonio Augusto; Amato, Sandra; Amerio, Silvia; Amhis, Yasmine; An, Liupan; Anderlini, Lucio; Anderson, Jonathan; Andreassen, Rolf; Andreotti, Mirco; Andrews, Jason; Appleby, Robert; Aquines Gutierrez, Osvaldo; Archilli, Flavio; Artamonov, Alexander; Artuso, Marina; Aslanides, Elie; Auriemma, Giulio; Baalouch, Marouen; Bachmann, Sebastian; Back, John; Badalov, Alexey; Baesso, Clarissa; Baldini, Wander; Barlow, Roger; Barschel, Colin; Barsuk, Sergey; Barter, William; Batozskaya, Varvara; Battista, Vincenzo; Bay, Aurelio; Beaucourt, Leo; Beddow, John; Bedeschi, Franco; Bediaga, Ignacio; Belogurov, Sergey; Belous, Konstantin; Belyaev, Ivan; Ben-Haim, Eli; Bencivenni, Giovanni; Benson, Sean; Benton, Jack; Berezhnoy, Alexander; Bernet, Roland; Bertolin, Alessandro; Bettler, Marc-Olivier; van Beuzekom, Martinus; Bien, Alexander; Bifani, Simone; Bird, Thomas; Bizzeti, Andrea; Bjørnstad, Pål Marius; Blake, Thomas; Blanc, Frédéric; Blouw, Johan; Blusk, Steven; Bocci, Valerio; Bondar, Alexander; Bondar, Nikolay; Bonivento, Walter; Borghi, Silvia; Borgia, Alessandra; Borsato, Martino; Bowcock, Themistocles; Bowen, Espen Eie; Bozzi, Concezio; Brett, David; Britsch, Markward; Britton, Thomas; Brodzicka, Jolanta; Brook, Nicholas; Bursche, Albert; Buytaert, Jan; Cadeddu, Sandro; Calabrese, Roberto; Calvi, Marta; Calvo Gomez, Miriam; Campana, Pierluigi; Campora Perez, Daniel; Capriotti, Lorenzo; Carbone, Angelo; Carboni, Giovanni; Cardinale, Roberta; Cardini, Alessandro; Carson, Laurence; Carvalho Akiba, Kazuyoshi; Casanova Mohr, Raimon; Casse, Gianluigi; Cassina, Lorenzo; Castillo Garcia, Lucia; Cattaneo, Marco; Cauet, Christophe; Cenci, Riccardo; Charles, Matthew; Charpentier, Philippe; Chefdeville, Maximilien; Chen, Shanzhen; Cheung, Shu-Faye; Chiapolini, Nicola; Chrzaszcz, Marcin; Cid Vidal, Xabier; Ciezarek, Gregory; Clarke, Peter; Clemencic, Marco; Cliff, Harry; Closier, Joel; Coco, Victor; Cogan, Julien; Cogneras, Eric; Cogoni, Violetta; Cojocariu, Lucian; Collazuol, Gianmaria; Collins, Paula; Comerma-Montells, Albert; Contu, Andrea; Cook, Andrew; Coombes, Matthew; Coquereau, Samuel; Corti, Gloria; Corvo, Marco; Counts, Ian; Couturier, Benjamin; Cowan, Greig; Craik, Daniel Charles; Crocombe, Andrew Christopher; Cruz Torres, Melissa Maria; Cunliffe, Samuel; Currie, Robert; D'Ambrosio, Carmelo; Dalseno, Jeremy; David, Pascal; David, Pieter; Davis, Adam; De Bruyn, Kristof; De Capua, Stefano; De Cian, Michel; De Miranda, Jussara; De Paula, Leandro; De Silva, Weeraddana; De Simone, Patrizia; Dean, Cameron Thomas; Decamp, Daniel; Deckenhoff, Mirko; Del Buono, Luigi; Déléage, Nicolas; Derkach, Denis; Deschamps, Olivier; Dettori, Francesco; Dey, Biplab; Di Canto, Angelo; Di Domenico, Antonio; Dijkstra, Hans; Donleavy, Stephanie; Dordei, Francesca; Dorigo, Mirco; Dosil Suárez, Alvaro; Dossett, David; Dovbnya, Anatoliy; Dreimanis, Karlis; Dujany, Giulio; Dupertuis, Frederic; Durante, Paolo; Dzhelyadin, Rustem; Dziurda, Agnieszka; Dzyuba, Alexey; Easo, Sajan; Egede, Ulrik; Egorychev, Victor; Eidelman, Semen; Eisenhardt, Stephan; Eitschberger, Ulrich; Ekelhof, Robert; Eklund, Lars; El Rifai, Ibrahim; Elsasser, Christian; Ely, Scott; Esen, Sevda; Evans, Hannah Mary; Evans, Timothy; Falabella, Antonio; Färber, Christian; Farinelli, Chiara; Farley, Nathanael; Farry, Stephen; Fay, Robert; Ferguson, Dianne; Fernandez Albor, Victor; Ferreira Rodrigues, Fernando; Ferro-Luzzi, Massimiliano; Filippov, Sergey; Fiore, Marco; Fiorini, Massimiliano; Firlej, Miroslaw; Fitzpatrick, Conor; Fiutowski, Tomasz; Fol, Philip; Fontana, Marianna; Fontanelli, Flavio; Forty, Roger; Francisco, Oscar; Frank, Markus; Frei, Christoph; Frosini, Maddalena; Fu, Jinlin; Furfaro, Emiliano; Gallas Torreira, Abraham; Galli, Domenico; Gallorini, Stefano; Gambetta, Silvia; Gandelman, Miriam; Gandini, Paolo; Gao, Yuanning; García Pardiñas, Julián; Garofoli, Justin; Garra Tico, Jordi; Garrido, Lluis; Gascon, David; Gaspar, Clara; Gastaldi, Ugo; Gauld, Rhorry; Gavardi, Laura; Gazzoni, Giulio; Geraci, Angelo; Gersabeck, Evelina; Gersabeck, Marco; Gershon, Timothy; Ghez, Philippe; Gianelle, Alessio; Gianì, Sebastiana; Gibson, Valerie; Giubega, Lavinia-Helena; Gligorov, Vladimir; Göbel, Carla; Golubkov, Dmitry; Golutvin, Andrey; Gomes, Alvaro; Gotti, Claudio; Grabalosa Gándara, Marc; Graciani Diaz, Ricardo; Granado Cardoso, Luis Alberto; Graugés, Eugeni; Graverini, Elena; Graziani, Giacomo; Grecu, Alexandru; Greening, Edward; Gregson, Sam; Griffith, Peter; Grillo, Lucia; Grünberg, Oliver; Gui, Bin; Gushchin, Evgeny; Guz, Yury; Gys, Thierry; Hadjivasiliou, Christos; Haefeli, Guido; Haen, Christophe; Haines, Susan; Hall, Samuel; Hamilton, Brian; Hampson, Thomas; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Harnew, Neville; Harnew, Samuel; Harrison, Jonathan; He, Jibo; Head, Timothy; Heijne, Veerle; Hennessy, Karol; Henrard, Pierre; Henry, Louis; Hernando Morata, Jose Angel; van Herwijnen, Eric; Heß, Miriam; Hicheur, Adlène; Hill, Donal; Hoballah, Mostafa; Hombach, Christoph; Hulsbergen, Wouter; Hussain, Nazim; Hutchcroft, David; Hynds, Daniel; Idzik, Marek; Ilten, Philip; Jacobsson, Richard; Jaeger, Andreas; Jalocha, Pawel; Jans, Eddy; Jawahery, Abolhassan; Jing, Fanfan; John, Malcolm; Johnson, Daniel; Jones, Christopher; Joram, Christian; Jost, Beat; Jurik, Nathan; Kandybei, Sergii; Kanso, Walaa; Karacson, Matthias; Karbach, Moritz; Karodia, Sarah; Kelsey, Matthew; Kenyon, Ian; Ketel, Tjeerd; Khanji, Basem; Khurewathanakul, Chitsanu; Klaver, Suzanne; Klimaszewski, Konrad; Kochebina, Olga; Kolpin, Michael; Komarov, Ilya; Koopman, Rose; Koppenburg, Patrick; Korolev, Mikhail; Kravchuk, Leonid; Kreplin, Katharina; Kreps, Michal; Krocker, Georg; Krokovny, Pavel; Kruse, Florian; Kucewicz, Wojciech; Kucharczyk, Marcin; Kudryavtsev, Vasily; Kurek, Krzysztof; Kvaratskheliya, Tengiz; La Thi, Viet Nga; Lacarrere, Daniel; Lafferty, George; Lai, Adriano; Lambert, Dean; Lambert, Robert W; Lanfranchi, Gaia; Langenbruch, Christoph; Langhans, Benedikt; Latham, Thomas; Lazzeroni, Cristina; Le Gac, Renaud; van Leerdam, Jeroen; Lees, Jean-Pierre; Lefèvre, Regis; Leflat, Alexander; Lefrançois, Jacques; Leroy, Olivier; Lesiak, Tadeusz; Leverington, Blake; Li, Yiming; Likhomanenko, Tatiana; Liles, Myfanwy; Lindner, Rolf; Linn, Christian; Lionetto, Federica; Liu, Bo; Lohn, Stefan; Longstaff, Iain; Lopes, Jose; Lowdon, Peter; Lucchesi, Donatella; Luo, Haofei; Lupato, Anna; Luppi, Eleonora; Lupton, Oliver; Machefert, Frederic; Machikhiliyan, Irina V; Maciuc, Florin; Maev, Oleg; Malde, Sneha; Malinin, Alexander; Manca, Giulia; Mancinelli, Giampiero; Mapelli, Alessandro; Maratas, Jan; Marchand, Jean François; Marconi, Umberto; Marin Benito, Carla; Marino, Pietro; Märki, Raphael; Marks, Jörg; Martellotti, Giuseppe; Martinelli, Maurizio; Martinez Santos, Diego; Martinez Vidal, Fernando; Martins Tostes, Danielle; Massafferri, André; Matev, Rosen; Mathe, Zoltan; Matteuzzi, Clara; Mazurov, Alexander; McCann, Michael; McCarthy, James; McNab, Andrew; McNulty, Ronan; McSkelly, Ben; Meadows, Brian; Meier, Frank; Meissner, Marco; Merk, Marcel; Milanes, Diego Alejandro; Minard, Marie-Noelle; Moggi, Niccolò; Molina Rodriguez, Josue; Monteil, Stephane; Morandin, Mauro; Morawski, Piotr; Mordà, Alessandro; Morello, Michael Joseph; Moron, Jakub; Morris, Adam Benjamin; Mountain, Raymond; Muheim, Franz; Müller, Katharina; Mussini, Manuel; Muster, Bastien; Naik, Paras; Nakada, Tatsuya; Nandakumar, Raja; Nasteva, Irina; Needham, Matthew; Neri, Nicola; Neubert, Sebastian; Neufeld, Niko; Neuner, Max; Nguyen, Anh Duc; Nguyen, Thi-Dung; Nguyen-Mau, Chung; Nicol, Michelle; Niess, Valentin; Niet, Ramon; Nikitin, Nikolay; Nikodem, Thomas; Novoselov, Alexey; O'Hanlon, Daniel Patrick; Oblakowska-Mucha, Agnieszka; Obraztsov, Vladimir; Ogilvy, Stephen; Okhrimenko, Oleksandr; Oldeman, Rudolf; Onderwater, Gerco; Orlandea, Marius; Osorio Rodrigues, Bruno; Otalora Goicochea, Juan Martin; Otto, Adam; Owen, Patrick; Oyanguren, Maria Arantza; Pal, Bilas Kanti; Palano, Antimo; Palombo, Fernando; Palutan, Matteo; Panman, Jacob; Papanestis, Antonios; Pappagallo, Marco; Pappalardo, Luciano; Parkes, Christopher; Parkinson, Christopher John; Passaleva, Giovanni; Patel, Girish; Patel, Mitesh; Patrignani, Claudia; Pearce, Alex; Pellegrino, Antonio; Penso, Gianni; Pepe Altarelli, Monica; Perazzini, Stefano; Perret, Pascal; Pescatore, Luca; Pesen, Erhan; Petridis, Konstantin; Petrolini, Alessandro; Picatoste Olloqui, Eduardo; Pietrzyk, Boleslaw; Pilař, Tomas; Pinci, Davide; Pistone, Alessandro; Playfer, Stephen; Plo Casasus, Maximo; Polci, Francesco; Poluektov, Anton; Polyakov, Ivan; Polycarpo, Erica; Popov, Alexander; Popov, Dmitry; Popovici, Bogdan; Potterat, Cédric; Price, Eugenia; Price, Joseph David; Prisciandaro, Jessica; Pritchard, Adrian; Prouve, Claire; Pugatch, Valery; Puig Navarro, Albert; Punzi, Giovanni; Qian, Wenbin; Rachwal, Bartolomiej; Rademacker, Jonas; Rakotomiaramanana, Barinjaka; Rama, Matteo; Rangel, Murilo; Raniuk, Iurii; Rauschmayr, Nathalie; Raven, Gerhard; Redi, Federico; Reichert, Stefanie; Reid, Matthew; dos Reis, Alberto; Ricciardi, Stefania; Richards, Sophie; Rihl, Mariana; Rinnert, Kurt; Rives Molina, Vincente; Robbe, Patrick; Rodrigues, Ana Barbara; Rodrigues, Eduardo; Rodriguez Perez, Pablo; Roiser, Stefan; Romanovsky, Vladimir; Romero Vidal, Antonio; Rotondo, Marcello; Rouvinet, Julien; Ruf, Thomas; Ruiz, Hugo; Ruiz Valls, Pablo; Saborido Silva, Juan Jose; Sagidova, Naylya; Sail, Paul; Saitta, Biagio; Salustino Guimaraes, Valdir; Sanchez Mayordomo, Carlos; Sanmartin Sedes, Brais; Santacesaria, Roberta; Santamarina Rios, Cibran; Santovetti, Emanuele; Sarti, Alessio; Satriano, Celestina; Satta, Alessia; Saunders, Daniel Martin; Savrina, Darya; Schiller, Manuel; Schindler, Heinrich; Schlupp, Maximilian; Schmelling, Michael; Schmidt, Burkhard; Schneider, Olivier; Schopper, Andreas; Schune, Marie Helene; Schwemmer, Rainer; Sciascia, Barbara; Sciubba, Adalberto; Semennikov, Alexander; Sepp, Indrek; Serra, Nicola; Serrano, Justine; Sestini, Lorenzo; Seyfert, Paul; Shapkin, Mikhail; Shapoval, Illya; Shcheglov, Yury; Shears, Tara; Shekhtman, Lev; Shevchenko, Vladimir; Shires, Alexander; Silva Coutinho, Rafael; Simi, Gabriele; Sirendi, Marek; Skidmore, Nicola; Skillicorn, Ian; Skwarnicki, Tomasz; Smith, Anthony; Smith, Edmund; Smith, Eluned; Smith, Jackson; Smith, Mark; Snoek, Hella; Sokoloff, Michael; Soler, Paul; Soomro, Fatima; Souza, Daniel; Souza De Paula, Bruno; Spaan, Bernhard; Spradlin, Patrick; Sridharan, Srikanth; Stagni, Federico; Stahl, Marian; Stahl, Sascha; Steinkamp, Olaf; Stenyakin, Oleg; Sterpka, Christopher Francis; Stevenson, Scott; Stoica, Sabin; Stone, Sheldon; Storaci, Barbara; Stracka, Simone; Straticiuc, Mihai; Straumann, Ulrich; Stroili, Roberto; Sun, Liang; Sutcliffe, William; Swientek, Krzysztof; Swientek, Stefan; Syropoulos, Vasileios; Szczekowski, Marek; Szczypka, Paul; Szumlak, Tomasz; T'Jampens, Stephane; Teklishyn, Maksym; Tellarini, Giulia; Teubert, Frederic; Thomas, Christopher; Thomas, Eric; van Tilburg, Jeroen; Tisserand, Vincent; Tobin, Mark; Todd, Jacob; Tolk, Siim; Tomassetti, Luca; Tonelli, Diego; Topp-Joergensen, Stig; Torr, Nicholas; Tournefier, Edwige; Tourneur, Stephane; Tran, Minh Tâm; Tresch, Marco; Trisovic, Ana; Tsaregorodtsev, Andrei; Tsopelas, Panagiotis; Tuning, Niels; Ubeda Garcia, Mario; Ukleja, Artur; Ustyuzhanin, Andrey; Uwer, Ulrich; Vacca, Claudia; Vagnoni, Vincenzo; Valenti, Giovanni; Vallier, Alexis; Vazquez Gomez, Ricardo; Vazquez Regueiro, Pablo; Vázquez Sierra, Carlos; Vecchi, Stefania; Velthuis, Jaap; Veltri, Michele; Veneziano, Giovanni; Vesterinen, Mika; Viana Barbosa, Joao Vitor; Viaud, Benoit; Vieira, Daniel; Vieites Diaz, Maria; Vilasis-Cardona, Xavier; Vollhardt, Achim; Volyanskyy, Dmytro; Voong, David; Vorobyev, Alexey; Vorobyev, Vitaly; Voß, Christian; de Vries, Jacco; Waldi, Roland; Wallace, Charlotte; Wallace, Ronan; Walsh, John; Wandernoth, Sebastian; Wang, Jianchun; Ward, David; Watson, Nigel; Websdale, David; Whitehead, Mark; Wiedner, Dirk; Wilkinson, Guy; Wilkinson, Michael; Williams, Matthew; Williams, Mike; Wilschut, Hans; Wilson, Fergus; Wimberley, Jack; Wishahi, Julian; Wislicki, Wojciech; Witek, Mariusz; Wormser, Guy; Wotton, Stephen; Wright, Simon; Wyllie, Kenneth; Xie, Yuehong; Xing, Zhou; Xu, Zhirui; Yang, Zhenwei; Yuan, Xuhao; Yushchenko, Oleg; Zangoli, Maria; Zavertyaev, Mikhail; Zhang, Liming; Zhang, Wen Chao; Zhang, Yanxi; Zhelezov, Alexey; Zhokhov, Anatoly; Zhong, Liang

2015-01-01

The associated production of a Z boson or an off-shell photon $\\gamma^*$ with a bottom quark in the forward region is studied using proton-proton collisions at a centre-of-mass energy of $7{\\mathrm{\\,Te\\kern -0.1em V}}$. The Z bosons are reconstructed in the ${\\text{Z}/\\gamma^*}\\rightarrow{\\mu^{+}\\mu^{-}}$ final state from muons with a transverse momentum larger than $20{\\mathrm{\\,Ge\\kern -0.1em V}}$, while two transverse momentum thresholds are considered for jets ($10{\\mathrm{\\,Ge\\kern -0.1em V}}$ and $20{\\mathrm{\\,Ge\\kern -0.1em V}}$). Both muons and jets are reconstructed in the pseudorapidity range $2.0 10{\\mathrm{\\,Ge\\kern -0.1em V}}$, and $ \\sigma(\\text{$\\text{Z}/\\gamma^*(\\mu^{+}\\mu^{-})$+b-jet}) = 167 \\pm 47 (\\text{stat}) \\pm 29 (\\text{syst}) \\pm 6 (\\text{lumi}) {\\,{fb}} $ for ${$p_{\\rm T}$}$(jet)$>20{\\mathrm{\\,Ge\\kern -0.1em V}}$.

Magnetic and thermodynamic properties of the Pr-based ferromagnet PrGe2-δ

Science.gov (United States)

Matsumoto, Keisuke T.; Morioka, Naoya; Hiraoka, Koichi

2018-03-01

We investigated the magnetization, M, and specific heat, C, of ThSi2-type PrGe2-δ. A polycrystalline sample of PrGe2-δ was prepared by arc-melting. Magnetization divided by magnetic field, M / B, increased sharply and C showed a clear jump at the Curie temperature, TC, of 14.6 K; these results indicate that PrGe2-δ ordered ferromagnetically. The magnetic entropy at TC reached R ln 3, indicating a quasi-triplet crystalline electric field (CEF) ground state. The maximum value of magnetic entropy change was 11.5 J/K kg with a field change of 7 T, which is comparable to those of other right rare-earth based magnetocaloric materials. This large magnetic entropy change was attributed to the quasi-triplet ground state of the CEF.

Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

Science.gov (United States)

Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

2012-09-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

International Nuclear Information System (INIS)

Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

2012-01-01

A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

International Nuclear Information System (INIS)

Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

2007-01-01

The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

Enhanced charge storage capability of Ge/GeO2 core/shell nanostructure

International Nuclear Information System (INIS)

Yuan, C L; Lee, P S

2008-01-01

A Ge/GeO 2 core/shell nanostructure embedded in an Al 2 O 3 gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO 2 core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO 2 shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering

Enhanced charge storage capability of Ge/GeO(2) core/shell nanostructure.

Science.gov (United States)

Yuan, C L; Lee, P S

2008-09-03

A Ge/GeO(2) core/shell nanostructure embedded in an Al(2)O(3) gate dielectrics matrix was produced. A larger memory window with good data retention was observed in the fabricated metal-insulator-semiconductor (MIS) capacitor for Ge/GeO(2) core/shell nanoparticles compared to Ge nanoparticles only, which is due to the high percentage of defects located on the surface and grain boundaries of the GeO(2) shell. We believe that the findings presented here provide physical insight and offer useful guidelines to controllably modify the charge storage properties of indirect semiconductors through defect engineering.

Measurement of the Deuteron Spin Structure Function g_1^d(x) for 1 (GeV/c)^2 < Q^2 < 40 (GeV/c)^2

OpenAIRE

E155 Collaboration

1999-01-01

New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...

Measurement of the deuteron spin structure function $g^{d}_1(x)$ for $1\\ (GeV/c)^2 < Q^2 < 40\\ (GeV/c)^2$.

OpenAIRE

Anthony , P.L.; Arnold , R.G.; Averett , T.; Band , H.R.; Berisso , M.C.; Borel , H.; Bosted , P.E.; Bultmann , S.L.; Buenerd , M.; Chupp , T.; Churchwell , S.; Court , G.R.; Crabb , D.; Day , D.; Decowski , P.

1999-01-01

New measurements are reported on the deuteron spin structure function g_1^d. These results were obtained from deep inelastic scattering of 48.3 GeV electrons on polarized deuterons in the kinematic range 0.01 < x < 0.9 and 1 < Q^2 < 40 (GeV/c)^2. These are the first high dose electron scattering data obtained using lithium deuteride (6Li2H) as the target material. Extrapolations of the data were performed to obtain moments of g_1^d, including Gamma_1^d, and the net quark polarization Delta Si...

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Hung-Pin Hsu

2013-01-01

Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

Measurements of spin parameters in p-p elastic scattering at 6 GeV/c

International Nuclear Information System (INIS)

Linn, S.L.; Perlmutter, A.; Crosbie, E.A.; Ratner, L.G.; Schultz, P.F.; O'Fallon, J.R.; Cameron, P.R.; Crabb, D.G.; Fernow, R.C.; Hansen, P.H.; Krisch, A.D.; Salthouse, A.J.; Sandler, B.; Shima, T.; Terwilliger, K.M.

1982-01-01

We measured the differential cross section for proton-proton elastic scattering in 6 GeV/c, with both initial spins oriented normal to the scattering plane. The analyzing power A shows significant structure with a large broad peak reaching about 24% near P/sub perpendicular/ 2 = 1.6 (GeV/c) 2 . The spin-spin correlation parameter A/sub n/n exhibits more dramatic structure, with a small but very sharp peak rising rapidly to about 13% at 90 0 /sub tsc.m./. This sharp peak may be caused by particle-identity effects

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

OpenAIRE

Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

2017-01-01

Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

Ultrahigh-pressure polyamorphism in GeO2 glass with coordination number >6

Science.gov (United States)

Kono, Yoshio; Kenney-Benson, Curtis; Ikuta, Daijo; Shibazaki, Yuki; Wang, Yanbin; Shen, Guoyin

2016-03-01

Knowledge of pressure-induced structural changes in glasses is important in various scientific fields as well as in engineering and industry. However, polyamorphism in glasses under high pressure remains poorly understood because of experimental challenges. Here we report new experimental findings of ultrahigh-pressure polyamorphism in GeO2 glass, investigated using a newly developed double-stage large-volume cell. The Ge-O coordination number (CN) is found to remain constant at ∼6 between 22.6 and 37.9 GPa. At higher pressures, CN begins to increase rapidly and reaches 7.4 at 91.7 GPa. This transformation begins when the oxygen-packing fraction in GeO2 glass is close to the maximal dense-packing state (the Kepler conjecture = ∼0.74), which provides new insights into structural changes in network-forming glasses and liquids with CN higher than 6 at ultrahigh-pressure conditions.

Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

International Nuclear Information System (INIS)

Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

2013-01-01

The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

Effects of ethylene on photosystem II and antioxidant enzyme activity in Bermuda grass under low temperature.

Science.gov (United States)

Hu, Zhengrong; Fan, Jibiao; Chen, Ke; Amombo, Erick; Chen, Liang; Fu, Jinmin

2016-04-01

The phytohormone ethylene has been reported to mediate plant response to cold stress. However, it is still debated whether the effect of ethylene on plant response to cold stress is negative or positive. The objective of the present study was to explore the role of ethylene in the cold resistance of Bermuda grass (Cynodon dactylon (L).Pers.). Under control (warm) condition, there was no obvious effect of the ethylene precursor 1-aminocyclopropane-1-carboxylic acid (ACC) or the antagonist Ag(+) of ethylene signaling on electrolyte leakage (EL) and malondialdehyde (MDA) content. Under cold stress conditions, ACC-treated plant leaves had a greater level of EL and MDA than the untreated leaves. However, the EL and MDA values were lower in the Ag(+) regime versus the untreated. In addition, after 3 days of cold treatment, ACC remarkably reduced the content of soluble protein and also altered antioxidant enzyme activity. Under control (warm) condition, there was no significant effect of ACC on the performance of photosystem II (PS II) as monitored by chlorophyll α fluorescence transients. However, under cold stress, ACC inhibited the performance of PS II. Under cold condition, ACC remarkably reduced the performance index for energy conservation from excitation to the reduction of intersystem electron acceptors (PI(ABS)), the maximum quantum yield of primary photochemistry (φP0), the quantum yield of electron transport flux from Q(A) to Q(B) (φE0), and the efficiency/probability of electron transport (ΨE0). Simultaneously, ACC increased the values of specific energy fluxes for absorption (ABS/RC) and dissipation (DI0/RC) after 3 days of cold treatment. Additionally, under cold condition, exogenous ACC altered the expressions of several related genes implicated in the induction of cold tolerance (LEA, SOD, POD-1 and CBF1, EIN3-1, and EIN3-2). The present study thus suggests that ethylene affects the cold tolerance of Bermuda grass by impacting the antioxidant system

Isothermal cross-sections of Sr-Al-Ge and Ba-Al-Ge systems at 673 K

International Nuclear Information System (INIS)

Kutsenok, N.L.; Yanson, T.I.

1987-01-01

X-ray and microstructural analyses are used to study phase equilibria in Sr-Al-Ge and Ba-Al-Ge systems. Existence of SrAl 2 Ge 2 , Sr(Al, Ge) 2 Ba(Al, Ge) 2 , Sr 3 Al 2 Ge 2 , Ba 3 Al 2 Ge 2 ternary compounds is confirmed, a new BaGe 4 binary compound and also new ternary compounds of approximate composition Sr 57 Al 30 Ge 13 and Ba 20 Al 40 Ge 40 , which crystal structure is unknown, are detected. Aluminium solubility in SrAl 4 and BaAl 4 binary compounds (0.05 atomic fraction) is determined. Ba(Al, Ge) 2 compound homogeneity region is defined more exactly (aluminium content varies from 0.27 to 0.51 at. fractions)

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

OpenAIRE

Hsu, Hung-Pin; Yang, Pong-Hong; Huang, Jeng-Kuang; Wu, Po-Hung; Huang, Ying-Sheng; Li, Cheng; Huang, Shi-Hao; Tiong, Kwong-Kau

2013-01-01

We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spec...

Temperature and density of nuclear matter in central CC interactions at P=4.2 GeV/c per nucleon

International Nuclear Information System (INIS)

Didenko, L.A.; Grishin, V.G.; Kowalski, M.; Kuznetsov, A.A.

1984-01-01

An estimation of the temperature and density of nuclear matter in central carbon-carbon interactions at P/A=4.2 GeV/c is presented. It is shown that at energies of about 4 GeV per nucleon it is possible to reach the transitional region between hadronic matter and quark-gluon plasma. The results could be however more convincing if one uses heavier ions than carbon

Mutation breeding of vegetatively propagated turf and forage Bermuda grass

International Nuclear Information System (INIS)

Burton, G.W.; Hanna, W.W.

1982-01-01

Tifgreen, Tifway and Tifdwarf, sterile triploid (2n = 27)F 1 hybrids between Cynodon dactylon and C. transvaalensis, are widely used turf grasses bred at Tifton, Georgia. They cannot be improved by conventional breeding methods. Attempts to improve them by treating short dormant rhizome sections with EMS failed but exposing them to 7-9 kR of gamma radiation produced 158 mutants. These have been evaluated at Tifton, and Beltsville, Maryland, and nine that appear to be better than the parents in one or more characteristics were planted in 8 x 10 m plots in triplicate in 1977. Test results to date suggest that one or more of these will be good enough to warrant a name and release to the public. Coastcross-1 is an outstanding sterile F 1 hybrid Bermuda grass that gives 35% more beef per acre but lacks winter hardiness. Since 1971, several million sprigs of Coastcross-1 have been exposed to 7 kR and have been planted and screened for winter survival at the Georgia Mountain Experiment Station. Chlorophyll-deficient mutants have appeared and one mutant slightly, but significantly, more winter hardy than Coastcross-1 has been obtained. Sprigs of this mutant named Coastcross 1-M3 are being irradiated and screened in an attempt to increase its winter hardiness. (author)

An inclusive study of the reaction anti NN → K01 + anything below 1.0 GeV/c

International Nuclear Information System (INIS)

Angelini, C.

1975-01-01

Some preliminary results are presented on an inclusive analysis of anti NN annihilations between 0. and 1.0 GeV/c incident anti p momentum. Inclusive K 0 1 distributions are considered and discussed in the framework of the thermodynamical model. (L.M.K.)

Search for neutrinoless double beta decay of Ge-76 with the GERmanium Detector Array '' GERDA ''

International Nuclear Information System (INIS)

Brugnera, R.

2009-01-01

The study of neutrinoless double beta decay (DBD) is the most powerful approach to the fundamental question if the neutrino is a Majorana particle, i.e. its own anti-particle. The observation of neutrinoless DBD would not only establish the Majorana nature of the neutrino but also represent a determination of its effective mass if the nuclear matrix element is given. So far, the most sensitive results have been obtained with Ge-76, and the group of Klapdor-Kleingrothaus has made a claim of discovery. Future experiments have to reduce radioactive backgrounds to increase the sensitivity. '' GERDA '' is a new double beta-decay experiment which is currently under construction in the INFN Gran Sasso National Laboratory, Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of '' GERDA '' is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments, increasing the sensitive mass and reaching exposure of 100 kg yr. It be will discuss design, physics reach, and status of construction of '' GERDA '', and present results from various R efforts including long term stability of bare Ge diodes in cryogenic liquids, material screening, cryostat performance, detector segmentation, cryogenic precision electronics, safety aspects, and Monte Carlo simulations. (author)

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

Science.gov (United States)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

International Nuclear Information System (INIS)

Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

1978-01-01

The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

Preparation of special purity Ge - S - I and Ge - Se - I glasses

Science.gov (United States)

Velmuzhov, A. P.; Sukhanov, M. V.; Shiryaev, V. S.; Kotereva, T. V.; Snopatin, G. E.; Churbanov, M. F.

2017-05-01

The paper considers the new approaches for the production of special pure Ge - S - I and Ge - Se - I glasses via the germanium(IV) iodide, germanium(II) sulfide, as well as the Ge2S3, Ge2S3I2 and Ge2Se3I2 glassy alloys. The glass samples containing 0.03-0.17 ppm(wt) hydrogen impurity in the form of SH-group, 0.04-0.15 ppm(wt) hydrogen impurity in the form of SeH-group, and 0.5-7.8 ppm(wt) oxygen impurity in the form of Ge-O were produced. Using a crucible technique, the single-index [GeSe4]95I5 glass fibers of 300-400 μm diameter were drawn. The minimum optical losses in the best fiber were 1.7 dB/m at a wavelength of 5.5 μm; the background optical losses were within 2-3 dB/m in the spectral range of 2.5-8 μm.

Self-assembled growth of nanostructural Ge islands on bromine ...

Indian Academy of Sciences (India)

bromine-passivated Si(111) surfaces at room temperature. AMAL K DAS1 ... Both the islands and the layer are nanocrystalline. This appears ..... coworkers estimated an activation energy of 0.59 ±0.1 eV for Ge diffusion on Si(100) and 0.45 eV ...

Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

Science.gov (United States)

Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

2016-02-01

The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

DEFF Research Database (Denmark)

Lu, Weifang; Li, Cheng; Lin, Guangyang

2015-01-01

Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

Theoretical designs of 19.6 nm Ne-like Ge XRL source

International Nuclear Information System (INIS)

Zhang Guoping; Zhang Tanxin; Zheng Wudi

2004-01-01

19.6 nm Ne-like Ge X-ray laser (XRL) can be used as a source to diagnose Rayleigh-Taylor instability in laser induced plasma. In this paper, systemic optimum designs and theoretical analysis to Ne-like Ge XRL driven by pre-main short pulses were conducted by a series of codes, which had been tested by experiments. Simulation results show that, adopting driven conditions of 2%-3% pre-pulse, 6-8 ns pre-main pulse interval and 40 TW/cm 2 power intensity, a gain area of 19.6 nm laser line beyond 60 μm and gain duration of 90 ps can be obtained. Furthermore, with 16 mm plane target, the gain gets to 11.8/cm, and if 6 mrad/cm curved target is adopted, it reaches to 13.3/cm, and small signal gain-length product of single target is about 21.3, which means that saturated gain can be realized by a single target. With double targets opposite coupling, gain-length product can reach 38.4, deep saturation can be gotten, and XRL source required by demonstration of application is out of question

Evidence for a narrow peak in K0sub(s)π+-π+π- at 2.6 GeV in 12 GeV/c anti pp interactions

International Nuclear Information System (INIS)

Apostolakis, A.; Casali, R.; Caso, C.; Goldschmidt-Clermont, Y.; Pape, L.; Porte, J.P.; Stergiou, A.; Tallini, B.; Vassiliadis, G.; Wenninger, H.; Grard, G.; Henri, V.P.; Herquet, P.; Kesteman, J.; Banerjee, S.; Barnham, K.W.J.; Beuselinck, R.; Butterworth, I.; Campbell, J.R.; Chaff, J.; Mermikides, M.E.; Miller, D.B.; Bertrand, D.; Johnson, D.; Lemonne, J.; Renton, P.; Wickens, J.; Bogaert, F. van den; Daugeras, B.; Jacholkowska, A.

1977-01-01

The evidence is reported for a narrow charged peak (5.5 s.d.), which the authors suggest calling the I, in the 6-prong-V 0 topology of anti pp interactions at 12 GeV/c. The mass, width and the product of cross section sigmasub(I) times the branching ratio BR into the final state (K 0 sub(s)π +- π + π - ) are found to be: Msub(I)=2.60+-0.01 GeV/c 2 , GAMMAsub(I) 2 , sigmasub(I).BR approximately 20 μbarn. (Auth.)

Depleted Uranium Toxicity, Accumulation, and Uptake in Cynodon dactylon (Bermuda) and Aristida purpurea (Purple Threeawn).

Science.gov (United States)

Butler, Afrachanna D; Wynter, Michelle; Medina, Victor F; Bednar, Anthony J

2016-06-01

Yuma Proving Grounds (YPG) in western Arizona is a testing range where Depleted uranium (DU) penetrators have been historically fired. A portion of the fired DU penetrators are being managed under controlled conditions by leaving them in place. The widespread use of DU in armor-penetrating weapons has raised environmental and human health concerns. The present study is focused on the onsite management approach and on the potential interactions with plants local to YPG. A 30 day study was conducted to assess the toxicity of DU corrosion products (e.g., schoepite and meta-schoepite) in two grass species that are native to YPG, Bermuda (Cynodon dactylon) and Purple Threeawn (Aristida purpurea). In addition, the ability for plants to uptake DU was studied. The results of this study show a much lower threshold for biomass toxicity and higher plant concentrations, particularly in the roots than shoots, compared to previous studies.

Growth and characterization of isotopically enriched 70Ge and 74Ge single crystals

International Nuclear Information System (INIS)

Itoh, K.

1992-10-01

Isotopically enriched 70 Ge and 74 Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm 3 volume. To our knowledge, we have grown the first 70 Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be ∼2 x cm -3 which is two order of magnitude better that of 74 Ge crystals previously grown by two different groups. Isotopic enrichment of the 70 Ge and the 74 Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed

Structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} and ZnGeN{sub 2}:Mn{sup 2+} for field emission displays

Energy Technology Data Exchange (ETDEWEB)

Zhang, Q.-H. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Guangzhou Research Institute of Non-ferrous Metals, Guangzhou, Guangdong 510651 (China); Wang, J., E-mail: ceswj@mail.sysu.edu.cn [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China); Yeh, C.-W.; Ke, W.-C.; Liu, R.-S. [Department of Chemistry, National Taiwan University, Taipei 106, Taiwan (China); Tang, J.-K. [Department of Physics and Astronomy, University of Wyoming, Laramie, WY 82071 (United States); Xie, M.-B.; Liang, H.-B.; Su, Q. [MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong 510275 (China)

2010-12-15

Yellowish-orange-emitting ZnGeN{sub 2} and orange-red-emitting ZnGeN{sub 2}:Mn were synthesized by a facile and mild gas-reduction-nitridation reaction at 1153 K under NH{sub 3} flow with air-stable raw materials ZnO, GeO{sub 2} and MnCO{sub 3}. The structure, composition, morphology, photoluminescence and cathodoluminescence properties of ZnGeN{sub 2} doped with or without Mn{sup 2+} were systematically investigated. Rietveld refinements show that the as-synthesized samples are obtained as single-phase compounds and crystallize as an orthorhombic structure with a space group of Pna2{sub 1}. The actual chemical composition of the as-prepared ZnGeN{sub 2} determined by energy dispersive X-ray spectroscopy suggests that the Ge vacancy defects probably exist in the host. The SEM image reveals that the Zn{sub 0.99}Mn{sub 0.01}GeN{sub 2} particles form aggregates {approx}500-600 nm in size. The diffuse reflection spectrum and photoluminescence excitation spectrum confirm that the band edge absorption of ZnGeN{sub 2} at low energy is 3.3 eV ({approx}376 nm). Upon UV light excitation and electron beam excitation, ZnGeN{sub 2} gives an intense yellowish-orange emission around 580-600 nm, associated with a deep defect level due to the Ge vacancy defects, and ZnGeN{sub 2}:Mn shows an intense red emission at 610 nm due to the {sup 4}T{sub 1g}({sup 4}G) {yields} 6A{sub 1g}({sup 6}S) of Mn{sup 2+}. The unusual red emission of Mn{sup 2+} in tetrahedral Zn{sup 2+} sites is attributed to the strong nephelauxetic effect between Mn{sup 2+} and the surrounding tetrahedrally coordinated nitrogen. The photoluminescence and cathodoluminescence emission colors of ZnGeN{sub 2}:Mn have a high color purity of {approx}93-98%. These results demonstrate that ZnGeN{sub 2}:Mn is a novel, promising red-emitting nitride, potentially applicable to field emission displays with brilliant color-rendering properties and a large color gamut.

A Genomic, Transcriptomic and Proteomic Look at the GE2270 Producer Planobispora rosea, an Uncommon Actinomycete.

Directory of Open Access Journals (Sweden)

Arianna Tocchetti

Full Text Available We report the genome sequence of Planobispora rosea ATCC 53733, a mycelium-forming soil-dweller belonging to one of the lesser studied genera of Actinobacteria and producing the thiopeptide GE2270. The P. rosea genome presents considerable convergence in gene organization and function with other members in the family Streptosporangiaceae, with a significant number (44% of shared orthologs. Patterns of gene expression in P. rosea cultures during exponential and stationary phase have been analyzed using whole transcriptome shotgun sequencing and by proteome analysis. Among the differentially abundant proteins, those involved in protein metabolism are particularly represented, including the GE2270-insensitive EF-Tu. Two proteins from the pbt cluster, directing GE2270 biosynthesis, slightly increase their abundance values over time. While GE2270 production starts during the exponential phase, most pbt genes, as analyzed by qRT-PCR, are down-regulated. The exception is represented by pbtA, encoding the precursor peptide of the ribosomally synthesized GE2270, whose expression reached the highest level at the entry into stationary phase.

Reach of the Fermilab Tevatron and CERN LHC for gaugino mediated SUSY breaking models

International Nuclear Information System (INIS)

Baer, Howard; Belyaev, Alexander; Krupovnickas, Tadas; Tata, Xerxes

2002-01-01

In supersymmetric models with gaugino mediated SUSY breaking (gMSB), it is assumed that SUSY breaking on a hidden brane is communicated to the visible brane via gauge superfields which propagate in the bulk. This leads to GUT models where the common gaugino mass m 1/2 is the only soft SUSY breaking term to receive contributions at the tree level. To obtain a viable phenomenology, it is assumed that the gaugino mass is induced at some scale M c beyond the GUT scale, and that additional renormalization group running takes place between M c and M GUT as in a SUSY GUT. We assume an SU(5) SUSY GUT above the GUT scale, and compute the SUSY particle spectrum expected in models with gMSB. We use the Monte Carlo program ISAJET to simulate signals within the gMSB model, and compute the SUSY reach including cuts and triggers appropriate to Fermilab Tevatron and CERN LHC experiments. We find no reach for SUSY by the Tevatron collider in the trilepton channel. At the CERN LHC, values of m 1/2 =1000 (1160) GeV can be probed with 10 (100) fb -1 of integrated luminosity, corresponding to a reach in terms of m g-tilde of 2150 (2500) GeV. The gMSB model and MSUGRA can likely only be differentiated at a linear e + e - collider with sufficient energy to produce sleptons and charginos

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

Science.gov (United States)

Fanciulli, Marco; Baldovino, Silvia; Molle, Alessandro

2012-02-01

High mobility substrates are important key elements in the development of advanced devices targeting a vast range of functionalities. Among them, Ge showed promising properties promoting it as valid candidate to replace Si in CMOS technology. However, the electrical quality of the Ge/oxide interface is still a problematic issue, in particular for the observed inversion of the n-type Ge surface, attributed to the presence of dangling bonds inducing a severe band bending [1]. In this scenario, the identification of electrically active defects present at the Ge/oxide interface and the capability to passivate or anneal them becomes a mandatory issue aiming at an electrically optimized interface. We report on the application of highly sensitive electrically detected magnetic resonance (EDMR) techniques in the investigation of defects at the interface between Ge and GeO2 (or GeOx), including Ge dangling bonds and defects in the oxide [2]. In particular we will investigate how different surface orientations, e.g. the (001) against the (111) Ge surface, impacts the microstructure of the interface defects. [1] P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009) [2] S. Baldovino, A. Molle, and M. Fanciulli, Appl. Phys. Lett. 96, 222110 (2010)

Distribution and Substitution Mechanism of Ge in a Ge-(Fe-Bearing Sphalerite

Directory of Open Access Journals (Sweden)

Nigel J. Cook

2015-03-01

Full Text Available The distribution and substitution mechanism of Ge in the Ge-rich sphalerite from the Tres Marias Zn deposit, Mexico, was studied using a combination of techniques at μm- to atomic scales. Trace element mapping by Laser Ablation Inductively Coupled Mass Spectrometry shows that Ge is enriched in the same bands as Fe, and that Ge-rich sphalerite also contains measurable levels of several other minor elements, including As, Pb and Tl. Micron- to nanoscale heterogeneity in the sample, both textural and compositional, is revealed by investigation using Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM combined with Synchrotron X-ray Fluorescence mapping and High-Resolution Transmission Electron Microscopy imaging of FIB-prepared samples. Results show that Ge is preferentially incorporated within Fe-rich sphalerite with textural complexity finer than that of the microbeam used for the X-ray Absorption Near Edge Structure (XANES measurements. Such heterogeneity, expressed as intergrowths between 3C sphalerite and 2H wurtzite on  zones, could be the result of either a primary growth process, or alternatively, polystage crystallization, in which early Fe-Ge-rich sphalerite is partially replaced by Fe-Ge-poor wurtzite. FIB-SEM imaging shows evidence for replacement supporting the latter. Transformation of sphalerite into wurtzite is promoted by (111* twinning or lattice-scale defects, leading to a heterogeneous ZnS sample, in which the dominant component, sphalerite, can host up to ~20% wurtzite. Ge K-edge XANES spectra for this sphalerite are identical to those of the germanite and argyrodite standards and the synthetic chalcogenide glasses GeS2 and GeSe2, indicating the Ge formally exists in the tetravalent form in this sphalerite. Fe K-edge XANES spectra for the same sample indicate that Fe is present mainly as Fe2+, and Cu K-edge XANES spectra are characteristic for Cu+. Since there is no evidence for coupled substitution involving a monovalent

Method for preparing high transition temperature Nb.sub.3 Ge superconductors

Science.gov (United States)

Newkirk, Lawrence R.; Valencia, Flavio A.

1977-01-01

Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

SiGe Integrated Circuit Developments for SQUID/TES Readout

Science.gov (United States)

Prêle, D.; Voisin, F.; Beillimaz, C.; Chen, S.; Piat, M.; Goldwurm, A.; Laurent, P.

2018-03-01

SiGe integrated circuits dedicated to the readout of superconducting bolometer arrays for astrophysics have been developed since more than 10 years at APC. Whether for Cosmic Microwave Background (CMB) observations with the QUBIC ground-based experiment (Aumont et al. in astro-ph.IM, 2016. arXiv:1609.04372) or for the Hot and Energetic Universe science theme with the X-IFU instrument on-board of the ATHENA space mission (Barret et al. in SPIE 9905, space telescopes & instrumentation 2016: UV to γ Ray, 2016. https://doi.org/10.1117/12.2232432), several kinds of Transition Edge Sensor (TES) (Irwin and Hilton, in ENSS (ed) Cryogenic particle detection, Springer, Berlin, 2005) arrays have been investigated. To readout such superconducting detector arrays, we use time or frequency domain multiplexers (TDM, FDM) (Prêle in JINST 10:C08015, 2016. https://doi.org/10.1088/1748-0221/10/08/C08015) with Superconducting QUantum Interference Devices (SQUID). In addition to the SQUID devices, low-noise biasing and amplification are needed. These last functions can be obtained by using BiCMOS SiGe technology in an Application Specific Integrated Circuit (ASIC). ASIC technology allows integration of highly optimised circuits specifically designed for a unique application. Moreover, we could reach very low-noise and wide band amplification using SiGe bipolar transistor either at room or cryogenic temperatures (Cressler in J Phys IV 04(C6):C6-101, 1994. https://doi.org/10.1051/jp4:1994616). This paper discusses the use of SiGe integrated circuits for SQUID/TES readout and gives an update of the last developments dedicated to the QUBIC telescope and to the X-IFU instrument. Both ASIC called SQmux128 and AwaXe are described showing the interest of such SiGe technology for SQUID multiplexer controls.

The roles of temperature and light in black band disease (BBD) progression on corals of the genus Diploria in Bermuda.

Science.gov (United States)

Kuehl, Kristin; Jones, Ross; Gibbs, David; Richardson, Laurie

2011-03-01

On Bermuda reefs the brain coral Diploria labyrinthiformis is rarely documented with black band disease (BBD), while BBD-affected colonies of Diploria strigosa are common. D. labyrinthiformis on these reefs may be more resistant to BBD or less affected by prevailing environmental conditions that potentially diminish host defenses. To determine whether light and/or temperature influence BBD differently on these two species, infection experiments were conducted under the following experimental treatments: (1) 26 °C, ambient light; (2) 30 °C, ambient light; (3) 30 °C, low light; and (4) 30 °C, high light. A digital photograph of the affected area of each coral was taken each day for 7 days and analyzed with ImageJ image processing software. The final affected area was not significantly different between species in any of the four treatments. BBD lesions were smaller on both species infected under ambient light at 26 °C versus 30 °C. Low light at 30 °C significantly reduced the lesion size on both species when compared to colonies infected at the same temperature under ambient light. Under high light at 30 °C, BBD lesions were larger on colonies of D. strigosa and smaller on colonies of D. labyrinthiformis when compared to colonies infected under ambient light at the same temperature. The responses of both species suggests that BBD progression on both D. strigosa and D. labyrinthiformis is similarly influenced by a combination of light and temperature and that other factors present before infections become established likely contribute to the difference in BBD prevalence in Bermuda. Copyright © 2010 Elsevier Inc. All rights reserved.

The transverse-energy distributions of 32S-nucleus collisions at 200 GeV per nucleon

International Nuclear Information System (INIS)

Akesson, T.; Atherton, H.; Beker, H.; Bettoni, D.; Boeggild, H.; Dederichs, K.; Devenish, R.C.E.; En'yo, H.; Esten, M.J.; Fabjan, C.W.; Mazzoni, M.A.; Nilsson, S.; Piuz, F.; Poulard, G.; Price, M.; Russ, J.; Schukraft, J.; Sekimoto, M.; Seman, M.; Shotton, P.; Sletten, H.; Thodberg, H.H.; Veenhof, R.; Wigmans, R.; Willis, W.; Almehed, S.; Haglund, R.; Hedeberg, V.; Johansson, S.; Loerstad, B.; Mjoernmark, U.; Angelis, A.L.S.; Dodd, J.R.; Lessard, L.; McCubbin, M.L.; Armenise, N.; Muciaccia, M.T.; Simone, S.; Aubry, P.; Beaudoin, G.; Beaulieu, J.M.; Depommier, P.; Lounis, A.; Bartels, H.W.; Drees, A.; Fischer, P.; Glaessel, P.; Goerlach, U.; Hoelscher, A.; Kroh, V.; Neubert, M.; Pfeiffer, A.; Specht, H.J.; Benary, O.; Dagan, S.; Heifetz, R.; Marzari-Chiesa, A.; Masera, M.; Oren, Y.; Bisi, V.; Giubellino, P.; Ramello, L.; Riccati, L.; Blevis, I.; Fraenkel, Z.; Tserruya, I.; Cleland, W.; Clemen, M.; Collick, B.; Murray, M.; Park, Y.M.; Thompson, J.; Corriveau, F.; Hamel, L.A.; Jarlskog, G.; Lamarche, F.; Leroy, C.; Mazzucato, E.; Sirois, Y.; Dell'Uomo, S.; Di Liberto, S.; Meddi, F.; Rosa, G.; DiGiacomo, N.; Van Hecke, H.; Jacak, B.; McGaughey, P.; Sondheim, W.; Sunier, J.; Dolgoshein, B.; Kalinovski, A.; Kantserov, A.; Nevski, P.; Smirnov, S.; Sumarokov, A.; Tcherniatin, V.; Tikhomirov, V.; Berlandsson, B.; Sellden, B.; Gaidot, A.; Gibrat-Debu, F.; London, G.; Pansart, J.P.; Vasseur, G.; McCubbin, N.A.; Romano, G.; Sidorov, V.

1988-01-01

Transverse-energy distributions have been measured for the collisions of the 32 S nucleus with Al, Ag, W, Pt, Pb and U target nuclei, at an incident energy of 200 GeV per nucleon. The shapes of these distribution reflect the geometry of the collisions, including the deformation effects. For central collisions, the transverse-energy production in the region -0.1 lab 0.5 , where A is the atomic mass number of the target. This increase is accompanied by a relative depletion in the forward region η lab > 2.9. These results are compared with those obtained under similar conditions with incident 16 O nuclei. A comparison is also made with the predictions of a Monte Carlo generator based on the dual parton model. Finally, we give estimates of the energy density reached and its dependence on the atomic mass number of the projectile. (orig.)

Si, Ge and SiGe wires for sensor application

International Nuclear Information System (INIS)

Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

2011-01-01

Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

GERDA results and the future perspectives for the neutrinoless double beta decay search using 76Ge

Science.gov (United States)

Agostini, M.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Baudis, L.; Bauer, C.; Bellotti, E.; Belogurov, S.; Bettini, A.; Bezrukov, L.; Biernat, J.; Bode, T.; Borowicz, D.; Brudanin, V.; Brugnera, R.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Comellato, T.; D’Andrea, V.; Demidova, E. V.; di Marco, N.; Domula, A.; Doroshkevich, E.; Egorov, V.; Gangapshev, A.; Garfagnini, A.; Giordano, M.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Hakenmüller, J.; Heisel, M.; Hemmer, S.; Hiller, R.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Janicskó Csáthy, J.; Jochum, J.; Junker, M.; Kazalov, V.; Kermaidic, Y.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Kneißl, R.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Macolino, C.; Majorovits, B.; Maneschg, W.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Nemchenok, I.; Panas, K.; Pandola, L.; Pelczar, K.; Pertoldi, L.; Pullia, A.; Ransom, C.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salamida, F.; Schneider, B.; Schönert, S.; Schreiner, J.; Schütz, A.-K.; Schulz, O.; Schwingenheuer, B.; Selivanenko, O.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Vanhoefer, L.; Vasenko, A. A.; Veresnikova, A.; von Sturm, K.; Wagner, V.; Wegmann, A.; Wester, T.; Wiesinger, C.; Wojcik, M.; Yanovich, E.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zschocke, A.; Zsigmond, A. J.; Zuber, K.; Zuzel, G.

2018-03-01

The GERmanium Detector Array (GERDA) is a low background experiment at the Laboratori Nazionali del Gran Sasso (LNGS) of INFN designed to search for the rare neutrinoless double beta decay (0νββ) of 76Ge. In the first phase (Phase I) of the experiment, high purity germanium diodes were operated in a “bare” mode and immersed in liquid argon. The overall background level of 10‑2cts/(keV ṡkg ṡyr) was a factor of ten better than those of its predecessors. No signal was found and a lower limit was set on the half-life for the 0νββ decay of 76Ge T1/20ν > 2.1 × 1025 yr (90% CL), while the corresponding median sensitivity was 2.4 × 1025 yr (90% CL). A second phase (Phase II) started at the end of 2015 after a major upgrade. Thanks to the increased detector mass and performance of the enriched germanium diodes and due to the introduction of liquid argon instrumentation techniques, it was possible to reduce the background down to 10‑3cts/(keV ṡkg ṡyr). After analyzing 23.2 kgṡyr of these new data no signal was seen. Combining these with the data from Phase I a stronger half-life limit of the 76Ge 0νββ decay was obtained: T1/20ν > 8.0 × 1025 yr (90% CL), reaching a sensitivity of 5.8 × 1025 yr (90% CL). Phase II will continue for the collection of an exposure of 100 kg ṡyr. If no signal is found by then the GERDA sensitivity will have reached 1.4 × 1026 yr for setting a 90% CL. limit. After the end of GERDA Phase II, the flagship experiment for the search of 0νββ decay of 76Ge will be LEGEND. LEGEND experiment is foreseen to deploy up to 1-ton of 76Ge. After ten years of data taking, it will reach a sensitivity beyond 1028 yr, and hence fully cover the inverted hierarchy region.

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

Directory of Open Access Journals (Sweden)

Wei-Ting eLai

2016-02-01

Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

Shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowires

Science.gov (United States)

Wen, Feng; Dillen, David C.; Kim, Kyounghwan; Tutuc, Emanuel

2017-06-01

We investigate the shell morphology and Raman spectra of epitaxial Ge-SixGe1-x and Si-SixGe1-x core-shell nanowire heterostructures grown using a combination of a vapor-liquid-solid (VLS) growth mechanism for the core, followed by in-situ epitaxial shell growth using ultra-high vacuum chemical vapor deposition. Cross-sectional transmission electron microscopy reveals that the VLS growth yields cylindrical Ge, and Si nanowire cores grown along the ⟨111⟩, and ⟨110⟩ or ⟨112⟩ directions, respectively. A hexagonal cross-sectional morphology is observed for Ge-SixGe1-x core-shell nanowires terminated by six {112} facets. Two distinct morphologies are observed for Si-SixGe1-x core-shell nanowires that are either terminated by four {111} and two {100} planes associated with the ⟨110⟩ growth direction or four {113} and two {111} planes associated with the ⟨112⟩ growth direction. We show that the Raman spectra of Si- SixGe1-x are correlated with the shell morphology thanks to epitaxial growth-induced strain, with the core Si-Si mode showing a larger red shift in ⟨112⟩ core-shell nanowires compared to their ⟨110⟩ counterparts. We compare the Si-Si Raman mode value with calculations based on a continuum elasticity model coupled with the lattice dynamic theory.

Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Directory of Open Access Journals (Sweden)

Guangyang Lin

2016-09-01

Full Text Available Direct band electroluminescence (EL from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs on a Ge virtual substrate (VS at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. As injection current density increases, additional emission shoulders from Γ2-HH2 transition in Ge wells and Ge VS appeared at around 1300–1400 nm and 1600–1700 nm, respectively. The peak energy of EL shifted to the lower energy side superquadratically with an increase of injection current density as a result of the Joule heating effect. During the elevation of environmental temperature, EL intensity increased due to a reduction of energy between L and Γ valleys of Ge. Empirical fitting of the relationship between the integrated intensity of EL (L and injection current density (J with L~Jm shows that the m factor increased with injection current density, suggesting higher light emitting efficiency of the diode at larger injection current densities, which can be attributed to larger carrier occupations in the Γ valley and the heavy hole (HH valance band at higher temperatures.

Investigation of the phase relations in the U-Al-Ge ternary system: Influence of the Al/Ge substitution on the properties of the intermediate phases

Energy Technology Data Exchange (ETDEWEB)

Moussa, C.; El Sayah, Z. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); Chajewski, G. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, 50-422 Wrocław (Poland); Berche, A.; Dorcet, V. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); Pikul, A.P. [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, 50-422 Wrocław (Poland); Pasturel, M. [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); Joanny, L. [ScanMAT – CMEBA, University of Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); Stepnik, B. [AREVA/CERCA, 10 Rue Juliette Récamier, 69006 Lyon (France); Tougait, O., E-mail: tougait@univ-rennes1.fr [Institut des Sciences Chimiques de Rennes, Chimie du Solide et Matériaux, UMR CNRS 6226, Université Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); Unité de Catalyse et de Chimie du Solide, UMR CNRS 8181, Université de Lille, 59695 Villeneuve d' Ascq (France)

2016-11-15

The phase relations within the U-Al-Ge ternary system were studied for two isothermal sections, at 673 K for the whole Gibbs triangle and at 1173 K for the concentration range 25–100 at% U. The identification of the phases, their composition ranges and stability were determined by x-ray powder diffraction, scanning electron microscopy coupled to energy dispersive spectroscopy and differential thermal analysis. The tie-lines and the solubility domains were determined for the U-Ge and U-Al binaries, the UAl{sub 3}-UGe{sub 3} solid-solution and for the unique ternary intermediate phase U{sub 3}Al{sub 2−x}Ge{sub 3+x}. The experimental isopleth section of the pseudo-binary UAl{sub 3}-UGe{sub 3} reveals an isomorphous solid solution based on the Cu{sub 3}Au-type below the solidus. The U{sub 3}Al{sub 2−x}Ge{sub 3+x} solid solution extends for −0.1≤x≤1.35 and −0.2≤x≤1.5 at 673 K and 1173 K respectively. It crystallizes in the I-centered tetragonal symmetry. The reciprocal lattice of several compositions of the U{sub 3}Al{sub 2−x}Ge{sub 3+x} solid solution was examined by electron diffraction at room temperature, revealing the presence of a c-glide plane. Their crystal structure was refined by single crystal x-ray diffraction suggesting an isomorphous solid solution best described with the non-centrosymmetric space group I4cm in the paramagnetic domain. The magnetic measurements confirm the ferromagnetic ordering of the solid solution U{sub 3}Al{sub 2−x}Ge{sub 3+x} with an increase of Tc with the Al content. The thermal variation of the specific heat bear out the magnetic transitions with some delocalized character of the uranium 5f electrons. - Graphical abstract: The phase relations within the U-Al-Ge ternary system were experimentally assessed for two isothermal sections, at 673 K for the whole Gibbs triangle and at 1173 K for the concentration range 25–100 at% U. A complete UAl{sub 3}-UGe{sub 3} solid-solution based on the Cu{sub 3}Au-type forms

Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

Science.gov (United States)

Stavarache, Ionel; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe

2017-10-01

Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. This article reports on a significant progress given by structuring Ge nanocrystals (Ge-NCs) embedded in silicon dioxide (SiO2) thin films by heating the substrate at 400 °C during co-deposition of Ge and SiO2 by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO2 photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 1014 Jones, quick response and significant conversion efficiency with peak value reaching 850% at -1 V and about 1000 nm. This simple preparation approach brings an important contribution to the effort of structuring Ge nanocrystallites in SiO2 thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.

Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

International Nuclear Information System (INIS)

Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

2013-01-01

We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

Magnetic behavior of Si-Ge bond in SixGe4-x nano-clusters

Science.gov (United States)

Nahali, Masoud; Mehri, Ali

2018-06-01

The structure of SixGe4-x nano-clusters were optimized by MPW1B95 level of theory using MG3S and SDB-aug-cc-PVTZ basis set. The agreement of the calculated ionization and dissociation energies with experimental values validates the reported structures of nano-clusters and justifies the use of hybrid meta density functional method. Since the Si-Si bond is stronger than Si-Ge and Ge-Ge bonds, the Si-Si, Si-Ge, and Ge-Ge diagonal bonds determine the precedence of the stability in these nano-clusters. The hybrid meta density functional calculations were carried out to investigate the adsorption of CO on all possible SixGe4-x nano-clusters. It was found that the silicon atom generally makes a stronger bond with CO than germanium and thereby preferentially affects the shape of structures having higher multiplicity. In Si-Ge structures with higher spin more than 95% of spins accumulate on positions with less bonds to other atoms of the cluster. Through CO adsorption on these clusters bridge structures are made that behave as spin bridge which conduct the spin from the nano-cluster surface to the adsorbate atoms. A better understanding of bridged structures was achieved upon introducing the 'spin bridge' concept. Based on exhaustive spin density analysis, it was found that the reason for the extra negative charge on oxygen in the bridged structures is the relocation of spin from the surface through the bridge.

Undulator sources at a 8 GeV storage ring

International Nuclear Information System (INIS)

Harami, Taikan.

1989-06-01

The use of undulators plays an important role as a high brilliance sources of synchrotron photon at a facility having an electron (or positron) storage ring. This paper describes the characteristics, tunability from gap variation and brilliance of synchrotron photon from undulators at a 8 GeV storage ring. The numerical studies show the following results. (1) Undulators for a 8 GeV storage ring can cover the first harmonic photon energy range from about 0.3 to 30 keV and the third harmonic photon from 0.85 to 70 keV. (2) The brilliance of undulator can be expected to be the order of 10 21 photons/(sec mm 2 mrad 2 0.1% band width mA), without size and angular spread in the electron beam (diffraction limit). (3) The peak brilliance has a broad maximum as a function of β function of the lattice and is shown to be practically independent on the β function. The peak brilliance is calculated to be the order of 10 16 photons/(sec mm 2 mrad 2 0.1% band width mA) at the electron beam emittance of 5 x 10 -9 m·rad (undulator length 2 m). (4) The nuclei of 57 Fe, 119 Sn and 238 U are expected to be the candidates for the Moessbauer scattering experiment using synchrotron photon from a 8 GeV storage ring. (author)

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

Water-vapor-enhanced growth of Ge-GeOx core-shell nanowires and Si1-xGexOy nanowires

International Nuclear Information System (INIS)

Hsu, T-J; Ko, C-Y; Lin, W-T

2007-01-01

The effects of moist Ar on the growth of Ge-GeO x core-shell nanowires (Ge-GeO x NWs) and Si 1-x Ge x O y nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO 2 powders at 1100 deg. C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeO x NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 deg. C in enhancing the growth of SiGeONWs and Ge-GeO x NWs, respectively. The growth mechanisms of Ge-GeO x NWs and SiGeONWs are also discussed

Thin SiGe virtual substrates for Ge heterostructures integration on silicon

International Nuclear Information System (INIS)

Cecchi, S.; Chrastina, D.; Frigerio, J.; Isella, G.; Gatti, E.; Guzzi, M.; Müller Gubler, E.; Paul, D. J.

2014-01-01

The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1 μm thick Si 1−x Ge x buffers (with x > 0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475 °C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si 1−x Ge x layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach

The 76Ge Program to Search for Neutrinoless Double-Beta Decay

Science.gov (United States)

Guiseppe, Vincente

2017-09-01

Neutrinoless double-beta decay searches play a major role in determining the nature of neutrinos, the existence of a lepton violating process, and the effective Majorana neutrino mass. The Majorana and Gerda Collaborations are operating arrays of high purity Ge detectors to search for neutrinoless double-beta decay in 76Ge. The Majorana Demonstrator is operating at the Sanford Underground Research Facility in South Dakota while the Gerda experiment is operating at LNGS in Italy. The Gerda and Majorana Demonstrator experiments have achieved the lowest backgrounds in the neutrinoless double-beta decay region of interest. These results, coupled with the superior energy resolution (0.1%) of Ge detectors demonstrate that 76Ge is an ideal isotope for a large next generation experiment. The LEGEND collaboration, with 220 members from 47 institutions around the world, has been formed to pursue a ton scale 76Ge experiment. Building on the successes of Gerda and Majorana, the LEGEND collaboration aims to develop a phased neutrinoless double-beta decay experimental program with discovery potential at a half-life significantly longer than 1027 years. This talk will present the initial results from the Majorana Demonstrator and Gerda experiments and the plan for the LEGEND program.

Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

Science.gov (United States)

Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

2018-01-01

The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

Limit on Neutrinoless Double Beta Decay of 76Ge by GERDA

Science.gov (United States)

Agostini, M.; Allardt, M.; Andreotti, E.; Bakalyarov, A. M.; Balata, M.; Barabanov, I.; Heider, M. Barabè; Barros, N.; Baudis, L.; Bauer, C.; Becerici-Schmidt, N.; Bellotti, E.; Belogurov, S.; Belyaev, S. T.; Benato, G.; Bettini, A.; Bezrukov, L.; Bode, T.; Brudanin, V.; Brugnera, R.; Budjáš, D.; Caldwell, A.; Cattadori, C.; Chernogorov, A.; Cossavella, F.; Demidova, E. V.; Domula, A.; Egorov, V.; Falkenstein, R.; Ferella, A.; Freund, K.; Frodyma, N.; Gangapshev, A.; Garfagnini, A.; Gotti, C.; Grabmayr, P.; Gurentsov, V.; Gusev, K.; Guthikonda, K. K.; Hampel, W.; Hegai, A.; Heisel, M.; Hemmer, S.; Heusser, G.; Hofmann, W.; Hult, M.; Inzhechik, L. V.; Csáthy, J. Janicskó; Jochum, J.; Junker, M.; Kihm, T.; Kirpichnikov, I. V.; Kirsch, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Kornoukhov, V. N.; Kuzminov, V. V.; Laubenstein, M.; Lazzaro, A.; Lebedev, V. I.; Lehnert, B.; Liao, H. Y.; Lindner, M.; Lippi, I.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Machado, A. A.; Macolino, C.; Majorovits, B.; Maneschg, W.; Misiaszek, M.; Nemchenok, I.; Nisi, S.; Shaughnessy, C. O.'.; Pandola, L.; Pelczar, K.; Pessina, G.; Pullia, A.; Riboldi, S.; Rumyantseva, N.; Sada, C.; Salathe, M.; Schmitt, C.; Schreiner, J.; Schulz, O.; Schwingenheuer, B.; Schönert, S.; Shevchik, E.; Shirchenko, M.; Simgen, H.; Smolnikov, A.; Stanco, L.; Strecker, H.; Tarka, M.; Ur, C. A.; Vasenko, A. A.; Volynets, O.; von Sturm, K.; Wagner, V.; Walter, M.; Wegmann, A.; Wester, T.; Wojcik, M.; Yanovich, E.; Zavarise, P.; Zhitnikov, I.; Zhukov, S. V.; Zinatulina, D.; Zuber, K.; Zuzel, G.

The Gerda experiment at the Laboratori Nazionali del Gran Sasso in Italy uses germanium detectors made from material with an enriched 76Ge isotope fraction to search for neutrinoless double beta decay of this nucleus. Applying a blind analysis we find no signal after an exposure of 21.6 kg·yr and a background of about 0.01 cts/(keV·kg·yr). A half-life limit of Tov1/2> 2.1 · 1025 yr (90% C.L.) is extracted. The previous claim of a signal for 76Ge is excluded with 99% probability in a model independent way.

Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

KAUST Repository

Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

2013-01-01

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

Energy Technology Data Exchange (ETDEWEB)

Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

2016-07-15

Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

Fast-neutron-induced potential background near the Q value of neutrinoless double-β decay of 76Ge

Science.gov (United States)

Tornow, W.; Bhike, Megha; Fallin, B.; Krishichayan

2016-01-01

The 76Ge (n,p)76Ga reaction and the subsequent β decay of 76Ga to 76Ge has been used to excite the 3951.89-keV state of 76Ge , which decays by the emission of a 2040.70-keV γ ray. Using high-purity germanium detectors, the associated pulse-height signal may be undistinguishable from the potential signal produced in neutrinoless double-β decay of 76Ge with its Q value of 2039.0 keV. At 20-MeV neutron energy the production cross section of the 2040.70-keV γ ray is approximately 0.1 mb.

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

International Nuclear Information System (INIS)

Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

2005-01-01

Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

International Nuclear Information System (INIS)

Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

2000-01-01

The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

Science.gov (United States)

Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

2017-06-01

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

Forbidden energy band gap in diluted a-Ge1−xSix:N films

International Nuclear Information System (INIS)

Guarneros, C.; Rebollo-Plata, B.; Lozada-Morales, R.; Espinosa-Rosales, J.E.; Portillo-Moreno, J.; Zelaya-Angel, O.

2012-01-01

By means of electron gun evaporation Ge 1−x Si x :N thin films, in the entire range 0 ≤ x ≤ 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 × 10 −4 Pa, then a pressure of 2.7 × 10 −2 Pa of high purity N 2 was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge 1−x Si x :N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E g ) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E g ) as a function of x in the entire range 0 ≤ x ≤ 1 shows two well defined regions: 0 ≤ x ≤ 0.67 and 0.67 ≤ x ≤ 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E g (x). In this case E g (x) versus x is different to the variation of E g in a-Ge 1−x Si x and a-Ge 1−x Si x :H. This fact can be related to the formation of Ge 3 N 4 and GeSi 2 N 4 when x ≤ 0.67, and to the formation of Si 3 N 4 and GeSi 2 N 4 for 0.67 ≤ x. - Highlights: ► Nitrogen doped amorphous Ge 1-x Si x thin films are grown by electron gun technique. ► Nitrogen atoms on E g of the a-Ge 1-x Si x films in the 0 £ x £ 1 range are analyzed. ► Variation in 0 £ x £ 1 range shows a warped change of E g in 1.0 – 3.6 eV range. ► The change in E g (x) behavior when x ∼ 0.67 was associated with Ge 2 SiN 4 presence.

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

Science.gov (United States)

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

2018-06-01

The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

Science.gov (United States)

2010-08-05

...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

Infrared spectrum and compressibility of Ti3GeC2 to 51 GPa

International Nuclear Information System (INIS)

Manoun, Bouchaib; Yang, H.; Saxena, S.K.; Ganguly, A.; Barsoum, M.W.; El Bali, B.; Liu, Z.X.; Lachkar, M.

2007-01-01

Using a synchrotron radiation source and a diamond anvil cell, we measured the pressure dependence of the lattice parameters of a polycrystalline Ti 3 GeC 2 sample up to a pressure of 51 GPa. No phase transformations were observed. Like Ti 3 SiC 2 , and most other compounds belonging to the same family of ternary carbides and nitrides, the so-called MAX phases, the compressibility of Ti 3 GeC 2 along the c axis is greater than that along the a axis. The bulk modulus is 197 ± 4 GPa, with a pressure derivative of 3.4 ± 0.1. We also characterized Ti 3 GeC 2 by infrared spectroscopy; four of the five expected infrared modes were observed for this material

Investigation on the dominant key to achieve superior Ge surface passivation by GeOx based on the ozone oxidation

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Wenwu; Xiong, Yuhua; Zhang, Jing; Zhao, Chao

2015-01-01

Highlights: • The dominant key to achieve superior Ge passivation by GeO x is investigated. • The interface state density decreases with increasing the GeO x thickness. • The Ge 3+ oxide component is the dominant key to passivate the Ge surface. • The atomic structure at the GeO x /Ge interface is built by XPS. - Abstract: The dominant key to achieve superior Ge surface passivation by GeO x interfacial layer is investigated based on ozone oxidation. The interface state density (D it ) measured from low temperature conduction method is found to decrease with increasing the GeO x thickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeO x /Ge with different GeO x thicknesses. And the XPS results show that Ge 3+ oxide component is responsible to the decrease of the D it due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge 3+ component is the dominant key to achieve low D it for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeO x regardless of the oxidation methods to grow the GeO x interfacial layer. As a result, to explore a growth process that can realize sufficient Ge 3+ component in the GeO x interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.

Remote plasma enhanced chemical deposition of non-crystalline GeO2 on Ge and Si substrates.

Science.gov (United States)

Lucovsky, Gerald; Zeller, Daniel

2011-09-01

Non-crystalline GeO2 films remote were plasma deposited at 300 degrees C onto Ge substrates after a final rinse in NH4OH. The reactant precursors gas were: (i) down-stream injected 2% GeH4 in He as the Ge precursor, and (ii) up-stream, plasma excited O2-He mixtures as the O precursor. Films annealed at 400 degrees C displayed no evidence for loss of O resulting in Ge sub-oxide formation, and for a 5-6 eV mid-gap absorption associated with formation of GeOx suboxide bonding, x deposited on Ge and annealed at 600 degrees C and 700 degrees C display spectra indicative of loss of O-atoms, accompanied with a 5.5 eV absorption. X-ray absorption spectroscopy and many-electron theory are combined to describe symmetries and degeneracies for O-vacancy bonding defects. These include comparisons with remote plasma-deposited non-crystalline SiO2 on Si substrates with SiON interfacial layers. Three different properties of remote plasma GeO2 films are addressed comparisons between (i) conduction band and band edge states of GeO2 and SiO2, and (ii) electronic structure of O-atom vacancy defects in GeO2 and SiO2, and differences between (iii) annealing of GeO2 films on Ge substrates, and Si substrates passivated with SiON interfacial transition regions important for device applications.

Magnetism and electronic structure of CoFeCrX (X = Si, Ge) Heusler alloys

International Nuclear Information System (INIS)

Jin, Y.; O'Connell, A.; Kharel, P.; Lukashev, P.; Staten, B.; Tutic, I.; Valloppilly, S.; Herran, J.; Mitrakumar, M.; Bhusal, B.; Huh, Y.; Yang, K.; Skomski, R.; Sellmyer, D. J.

2016-01-01

The structural, electronic, and magnetic properties of CoFeCrX (X = Si, Ge) Heusler alloys have been investigated. Experimentally, the alloys were synthesized in the cubic L2 1 structure with small disorder. The cubic phase of CoFeCrSi was found to be highly stable against heat treatment, but CoFeCrGe disintegrated into other new compounds when the temperature reached 402 °C (675 K). Although the first-principle calculation predicted the possibility of tetragonal phase in CoFeCrGe, the tetragonal phase could not be stabilized experimentally. Both CoFeCrSi and CoFeCrGe compounds showed ferrimagnetic spin order at room temperature and have Curie temperatures (T C ) significantly above room temperature. The measured T C for CoFeCrSi is 790 K but that of CoFeCrGe could not be measured due to its dissociation into new compounds at 675 K. The saturation magnetizations of CoFeCrSi and CoFeCrGe are 2.82 μ B /f.u. and 2.78 μ B /f.u., respectively, which are close to the theoretically predicted value of 3 μ B /f.u. for their half-metallic phases. The calculated band gaps for CoFeCrSi and CoFeCrGe are, respectively, 1 eV and 0.5 eV. These materials have potential for spintronic device applications, as they exhibit half-metallic electronic structures with large band gaps, and Curie temperatures significantly above room temperature.

Superconductivity and anomalous normal state in the CePd2Si2/CeNi2Ge2 system

International Nuclear Information System (INIS)

Grosche, F.M.; Lister, S.J.S.; Carter, F.V.; Saxena, S.S.; Haselwimmer, R.K.W.; Mathur, N.D.; Julian, S.R.; Lonzarich, G.G.

1997-01-01

The unconventional nonmagnetic metal CeNi 2 Ge 2 is characterised at ambient pressure by temperature dependences of the specific heat and of the resistivity which deviate strongly from standard Fermi-liquid predictions and are reminiscent of the behaviour observed in its sibling system CePd 2 Si 2 above the critical pressure at which magnetic order is suppressed. We have explored the CePd 2 Si 2 /CeNi 2 Ge 2 phase diagram in a series of resistivity measurements under high hydrostatic pressure, p. At p>15 kbar, a new superconducting transition appears below 220 mK in CeNi 2 Ge 2 and shifts to higher temperatures with increasing pressure, reaching ∝400 mK at p∝26 kbar. (orig.)

Study of Fermion Pair Production in $e^{+}e^{-}$ Collisions at 130-183 GeV

CERN Document Server

Barate, R.; Ghez, Philippe; Goy, C.; Jezequel, S.; Lees, J.P.; Martin, F.; Merle, E.; Minard, M.N.; Pietrzyk, B.; Alemany, R.; Casado, M.P.; Chmeissani, M.; Crespo, J.M.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, L.; Grauges, E.; Juste, A.; Martinez, M.; Merino, G.; Miquel, R.; Mir, L.M.; Morawitz, P.; Pacheco, A.; Park, I.C.; Riu, I.; Colaleo, A.; Creanza, D.; De Palma, M.; Gelao, G.; Iaselli, G.; Maggi, G.; Maggi, M.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Tricomi, A.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Abbaneo, D.; Becker, U.; Boix, G.; Cattaneo, M.; Ciulli, V.; Dissertori, G.; Drevermann, H.; Forty, R.W.; Frank, M.; Gianotti, F.; Halley, A.W.; Hansen, J.B.; Harvey, John; Janot, P.; Jost, B.; Lehraus, I.; Leroy, O.; Loomis, C.; Maley, P.; Mato, P.; Minten, A.; Moutoussi, A.; Ranjard, F.; Rolandi, Gigi; Rousseau, D.; Schlatter, D.; Schmitt, M.; Schneider, O.; Tejessy, W.; Teubert, F.; Tomalin, I.R.; Tournefier, E.; Vreeswijk, M.; Wright, A.E.; Ajaltouni, Z.; Badaud, F.; Chazelle, G.; Deschamps, O.; Dessagne, S.; Falvard, A.; Ferdi, C.; Gay, P.; Guicheney, C.; Henrard, P.; Jousset, J.; Michel, B.; Monteil, S.; Montret, J.C.; Pallin, D.; Perret, P.; Podlyski, F.; Hansen, J.D.; Hansen, J.R.; Hansen, P.H.; Nilsson, B.S.; Rensch, B.; Waananen, A.; Daskalakis, G.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Blondel, A.; Brient, J.C.; Machefert, F.; Rouge, A.; Swynghedauw, M.; Tanaka, R.; Valassi, A.; Videau, H.; Focardi, E.; Parrini, G.; Zachariadou, K.; Cavanaugh, R.; Corden, M.; Georgiopoulos, C.; Antonelli, A.; Bencivenni, G.; Bologna, G.; Bossi, F.; Campana, P.; Capon, G.; Cerutti, F.; Chiarella, V.; Laurelli, P.; Mannocchi, G.; Murtas, F.; Murtas, G.P.; Passalacqua, L.; Pepe-Altarelli, M.; Chalmers, M.; Curtis, L.; Lynch, J.G.; Negus, P.; O'Shea, V.; Raeven, B.; Raine, C.; Smith, D.; Teixeira-Dias, P.; Thompson, A.S.; Ward, J.J.; Buchmuller, O.; Dhamotharan, S.; Geweniger, C.; Hanke, P.; Hansper, G.; Hepp, V.; Kluge, E.E.; Putzer, A.; Sommer, J.; Tittel, K.; Werner, S.; Wunsch, M.; Beuselinck, R.; Binnie, D.M.; Cameron, W.; Dornan, P.J.; Girone, M.; Goodsir, S.; Marinelli, N.; Martin, E.B.; Nash, J.; Nowell, J.; Sciaba, A.; Sedgbeer, J.K.; Spagnolo, P.; Thomson, Evelyn J.; Williams, M.D.; Ghete, V.M.; Girtler, P.; Kneringer, E.; Kuhn, D.; Rudolph, G.; Betteridge, A.P.; Bowdery, C.K.; Buck, P.G.; Colrain, P.; Crawford, G.; Ellis, G.; Finch, A.J.; Foster, F.; Hughes, G.; Jones, R.W.L.; Robertson, N.A.; Williams, M.I.; van Gemmeren, P.; Giehl, I.; Holldorfer, F.; Hoffmann, C.; Jakobs, K.; Kleinknecht, K.; Krocker, M.; Nurnberger, H.A.; Quast, G.; Renk, B.; Rohne, E.; Sander, H.G.; Schmeling, S.; Wachsmuth, H.; Zeitnitz, C.; Ziegler, T.; Aubert, J.J.; Benchouk, C.; Bonissent, A.; Carr, J.; Coyle, P.; Ealet, A.; Fouchez, D.; Motsch, F.; Payre, P.; Talby, M.; Thulasidas, M.; Tilquin, A.; Aleppo, M.; Antonelli, M.; Ragusa, F.; Berlich, R.; Buescher, Volker; Dietl, H.; Ganis, G.; Huttmann, K.; Lutjens, G.; Mannert, C.; Manner, W.; Moser, H.G.; Schael, S.; Settles, R.; Seywerd, H.; Stenzel, H.; Wiedenmann, W.; Wolf, G.; Azzurri, P.; Boucrot, J.; Callot, O.; Chen, S.; Davier, M.; Duflot, L.; Grivaz, J.F.; Heusse, P.; Jacholkowska, A.; Kado, M.; Lefrancois, J.; Serin, L.; Veillet, J.J.; Videau, I.; de Viviede Regie, J.B.; Zerwas, D.; Bagliesi, Giuseppe; Bettarini, S.; Boccali, T.; Bozzi, C.; Calderini, G.; Dell'Orso, R.; Ferrante, I.; Giassi, A.; Gregorio, A.; Ligabue, F.; Lusiani, A.; Marrocchesi, P.S.; Messineo, A.; Palla, F.; Rizzo, G.; Sanguinetti, G.; Sguazzoni, G.; Tenchini, R.; Vannini, C.; Venturi, A.; Verdini, P.G.; Blair, G.A.; Coles, J.; Cowan, G.; Green, M.G.; Hutchcroft, D.E.; Jones, L.T.; Medcalf, T.; Strong, J.A.; von Wimmersperg-Toeller, J.H.; Botterill, D.R.; Clifft, R.W.; Edgecock, T.R.; Norton, P.R.; Thompson, J.C.; Bloch-Devaux, Brigitte; Colas, P.; Fabbro, B.; Faif, G.; Lancon, E.; Lemaire, M.C.; Locci, E.; Perez, P.; Przysiezniak, H.; Rander, J.; Renardy, J.F.; Rosowsky, A.; Trabelsi, A.; Tuchming, B.; Vallage, B.; Black, S.N.; Dann, J.H.; Kim, H.Y.; Konstantinidis, N.; Litke, A.M.; McNeil, M.A.; Taylor, G.; Booth, C.N.; Cartwright, S.; Combley, F.; Hodgson, P.N.; Kelly, M.S.; Lehto, M.; Thompson, L.F.; Affholderbach, K.; Boehrer, Armin; Brandt, S.; Grupen, C.; Misiejuk, A.; Prange, G.; Sieler, U.; Giannini, G.; Gobbo, B.; Putz, J.; Rothberg, J.; Wasserbaech, S.; Williams, R.W.; Armstrong, S.R.; Charles, E.; Elmer, P.; Ferguson, D.P.S.; Gao, Y.; Gonzalez, S.; Greening, T.C.; Hayes, O.J.; Hu, H.; Jin, S.; McNamara, P.A., III; Nachtman, J.M.; Nielsen, J.; Orejudos, W.; Pan, Y.B.; Saadi, Y.; Scott, I.J.; Walsh, J.; Wu, Sau Lan; Wu, X.; Zobernig, G.

2000-01-01

The cross sections and forward-backward asymmetries of hadronic and leptonic events produced in e+e- collisions at centre-of-mass energies of 130-183 GeV are presented. Results for ee, mumu, tautau, qq, bb and cc production show no significant deviation from the Standard Model predictions. This enable constraints to be set upon physics beyond the Standard Model such as four-fermion contact interactions, leptoquarks, Z' bosons and R-parity violating squarks and sneutrinos. Limits on the energy scale Lambda of eeff contact interactions are typically in the range from 2-10 TeV. Limits on R-parity violating sneutrinos reach masses of a few hundred GeV for large values of their Yukawa couplings.

One-step Ge/Si epitaxial growth.

Science.gov (United States)

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Interfacial sharpness and intermixing in a Ge-SiGe multiple quantum well structure

Science.gov (United States)

Bashir, A.; Gallacher, K.; Millar, R. W.; Paul, D. J.; Ballabio, A.; Frigerio, J.; Isella, G.; Kriegner, D.; Ortolani, M.; Barthel, J.; MacLaren, I.

2018-01-01

A Ge-SiGe multiple quantum well structure created by low energy plasma enhanced chemical vapour deposition, with nominal well thickness of 5.4 nm separated by 3.6 nm SiGe spacers, is analysed quantitatively using scanning transmission electron microscopy. Both high angle annular dark field imaging and electron energy loss spectroscopy show that the interfaces are not completely sharp, suggesting that there is some intermixing of Si and Ge at each interface. Two methods are compared for the quantification of the spectroscopy datasets: a self-consistent approach that calculates binary substitutional trends without requiring experimental or computational k-factors from elsewhere and a standards-based cross sectional calculation. Whilst the cross section approach is shown to be ultimately more reliable, the self-consistent approach provides surprisingly good results. It is found that the Ge quantum wells are actually about 95% Ge and that the spacers, whilst apparently peaking at about 35% Si, contain significant interdiffused Ge at each side. This result is shown to be not just an artefact of electron beam spreading in the sample, but mostly arising from a real chemical interdiffusion resulting from the growth. Similar results are found by use of X-ray diffraction from a similar area of the sample. Putting the results together suggests a real interdiffusion with a standard deviation of about 0.87 nm, or put another way—a true width defined from 10%-90% of the compositional gradient of about 2.9 nm. This suggests an intrinsic limit on how sharp such interfaces can be grown by this method and, whilst 95% Ge quantum wells (QWs) still behave well enough to have good properties, any attempt to grow thinner QWs would require modifications to the growth procedure to reduce this interdiffusion, in order to maintain a composition of ≥95% Ge.

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

International Nuclear Information System (INIS)

Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

2014-01-01

We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

International Nuclear Information System (INIS)

Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

2010-01-01

In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

International Nuclear Information System (INIS)

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

2006-01-01

Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

Science.gov (United States)

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge{sub 1−x}Sn{sub x} layer on Ge(0 0 1) substrate

Energy Technology Data Exchange (ETDEWEB)

Wang, Wei; Li, Lingzi; Zhou, Qian [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Pan, Jisheng; Zhang, Zheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore); Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-12-01

Highlights: • Ge{sub 0.915}Sn{sub 0.085} was grown on Ge (0 0 1) by molecular beam epitaxy (MBE). • The impact of annealing on surface morphology and Sn composition was studied. • Sn is found to preferentially segregate towards the surface at 200 °C. • A Sn-rich layer would form on the Ge{sub 1−x}Sn{sub x} surface after annealing at 300 °C. • Sn desorption and formation of Sn-rich islands were found when T > 300 °C. - Abstract: Annealing of strained Ge{sub 1−x}Sn{sub x} epitaxial layers grown on Ge(0 0 1) substrate results in two distinctive regimes marked by changes in composition and morphology. Annealing at low temperatures (200–300 °C or Regime-I) leads to surface enrichment of Sn due to Sn segregation, as indicated by X-ray photoelectron spectroscopy (XPS) results, while the bulk Sn composition (from X-ray diffraction (XRD)) and the surface morphology (from atomic force microscopy (AFM)) do not show discernible changes as compared to the as-grown sample. Annealing at temperatures ranging from 300 °C to 500 °C (Regime-II) leads to a decrease in the surface Sn composition. While the Ge{sub 1−x}Sn{sub x} layer remains fully strained, a reduction in the bulk Sn composition is observed when the annealing temperature reaches 500 °C. At this stage, surface roughening also occurs with formation of 3D islands. The island size increases as the annealing temperature is raised to 600 °C. The decrease in the Sn composition at the surface and in the bulk in Regime-II is attributed to additional thermally activated kinetic processes associated with Sn desorption and formation of Sn-rich 3D islands on the surface.

Structure and Stability of GeAun, n = 1-10 clusters: A Density Functional Study

International Nuclear Information System (INIS)

Priyanka,; Dharamvir, Keya; Sharma, Hitesh

2011-01-01

The structures of Germanium doped gold clusters GeAu n (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu n clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu n clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding silicon doped gold cluster. The HUMO-LOMO gap for Au n Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.

Local structure and thermoelectric properties of Mg{sub 2}Si{sub 0.977−x}Ge{sub x}Bi{sub 0.023} (0.1 ⩽ x ⩽ 0.4)

Energy Technology Data Exchange (ETDEWEB)

Farahi, Nader [Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1 (Canada); Prabhudev, Sagar; Botton, Gianluigi A. [Materials Science and Engineering Department, McMaster University, Hamilton, ON L8S 4L8 (Canada); Zhao, Jianbao; Tse, John S. [Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States); Salvador, James R. [General Motors Research & Development Center, Warren, MI 48090 (United States); Kleinke, Holger, E-mail: kleinke@uwaterloo.ca [Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1 (Canada)

2015-09-25

Highlights: • Incorporating Ge into Bi-doped Mg{sub 2}Si decreases the thermal conductivity and enhances the thermoelectric performance. • Ge-rich domains, identified via TEM, contribute to these changes. • Interstitial sites are in part filled with Mg atoms, as revealed via TEM. • Doping with Bi is advantageous over doping with Sb, resulting in an increase of 48% of the thermoelectric figure of merit. • The highest figure-of-merit of these materials is zT{sub max} = 0.7 at 773 K, realized for Mg{sub 2}Si{sub 0.677}Ge{sub 0.3}Bi{sub 0.023}. - Abstract: We investigated the effect of germanium substitution for silicon in bismuth doped Mg{sub 2}Si. This alloying reduces the thermal conductivity from above 7 W m{sup −1} K{sup −1} to 2.7 W m{sup −1} K{sup −1} at around 300 K in part due to the added mass contrast. High resolution transmission electron microscopy (HRTEM) revealed the presence of Ge-rich domains within the Mg{sub 2}(Si,Ge,Bi) particles, contributing to decreasing thermal conductivity with increasing Ge content up to 0.3 Ge per formula unit. The electrical conductivity also decreases with Ge alloying because of the increasing amount of scattering centers, while the Seebeck coefficient increased only very slightly. In total, the positive effect of Ge substitution on the thermoelectric properties of Bi doped Mg{sub 2}Si resulted in a figure of merit of 0.7 at 773 K for Mg{sub 2}Si{sub 0.677}Ge{sub 0.3}Bi{sub 0.023} sample. The optimum amount of Bi seems to be 0.023 per formula unit (0.77 at%), since lower Bi content resulted in electrical conductivity that is too low, and higher Bi content generated the Mg{sub 3}Bi{sub 2} intermetallic phase.

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO2 interface after capping with Al2O3 layer

International Nuclear Information System (INIS)

Paleari, S.; Molle, A.; Accetta, F.; Lamperti, A.; Cianci, E.; Fanciulli, M.

2014-01-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO 2 -passivated Ge(1 1 1) substrate and Al 2 O 3 grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al 2 O 3 /GeO 2 /Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices ( 10 cm −2 ). In particular, it is shown that capping the GeO 2 -passivated Ge(1 1 1) with Al 2 O 3 has no impact on the microstructure of the Ge dangling bond.

Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation

Energy Technology Data Exchange (ETDEWEB)

Satoh, Yuhki, E-mail: yu-ki@ecei.tohoku.ac.jp; Itoh, Yuhki; Kawashima, Tomoyuki; Washio, Katsuyoshi

2016-03-01

To form Ge dots on a Si substrate, the effect of thermal reaction temperature of sub-monolayer C with Si (100) was investigated and the deposited Ge thickness was optimized. The samples were prepared by solid-source molecular beam epitaxy with an electron-beam gun for C sublimation and a Knudsen cell for Ge evaporation. C of 0.25 ML was deposited on Si (100) at a substrate temperature of 200 °C, followed by a high-temperature treatment at the reaction temperature (T{sub R}) of 650–1000 °C to create Si–C bonds. Ge equivalent to 2 to 5 nm thick was subsequently deposited at 550 °C. Small and dense dots were obtained for T{sub R} = 750 °C but the dot density decreased and the dot diameter varied widely in the case of lower and higher T{sub R}. A dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge deposition equivalent to 3 to 5 nm thick and a standard deviation of dot diameter was the lowest of 10 nm for 5 nm thick Ge. These results mean that C-mediated Ge dot formation was strongly influenced not only by the c(4 × 4) reconstruction condition through the Si–C reaction but also the relationship between the Ge deposition thickness and the exposed Si (100)-(2 × 1) surface area. - Highlights: • The effect of Si–C reaction temperature on Ge dot formation was investigated. • Small and dense dots were obtained for T{sub R} = 750 °C. • The dot density of about 2 × 10{sup 10} cm{sup −2} was achieved for Ge = 3 to 5 nm. • The standard deviation of dot diameter was the lowest of 10 nm at Ge = 5 nm.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition

International Nuclear Information System (INIS)

Bollani, M; Fedorov, A; Chrastina, D; Sordan, R; Picco, A; Bonera, E

2010-01-01

Si 1-x Ge x islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si 1-x Ge x islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s -1 ) and low temperature (650 deg. C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Science.gov (United States)

Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

2010-11-26

Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

Large-x sub F spin asymmetry in. pi. sup 0 production by 200-GeV polarized protons

Energy Technology Data Exchange (ETDEWEB)

Adams, D L; Corcoran, M D; Cranshaw, J; Nessi-Tedaldi, F; Nessi, M; Nguyen, C; Roberts, J B; Skeens, J; White, J L [Rice Univ., Houston, TX (United States). T.W. Bonner Nuclear Lab.; Akchurin, N; Onel, Y [Iowa Univ., Iowa City, IA (United States). Dept. of Physics; Belikov, N I; Derevschikov, A A; Grachov, O A; Matulenko, Yu A; Meschanin, A P; Nurushev, S B; Patalakha, D I; Rykov, V L; Solovyanov, V L; Vasiliev, A N [Inst. of High Energy Physics, Serpukhov (Russia); Bystricky, J; Lehar, F; Lesquen, A de [CEN-Saclay, 91 - Gif-sur-Yvette (France); Cossairt, J D; Read, A L [Fermi National Accelerator Lab., Batavia, IL (United States); En' yo, H; Funahashi, H; Goto, Y; Imai, K; Itow, Y; Makino, S; Masaike, A; Miyake, K; Nagamine, T; Saito, N; Yamashita, S [Kyoto Univ. (Japan). Dept. of Physics; Grosnick, D P; Hill, D A; Laghai, M; Lopiano, D; Ohashi, Y; Spinka, H; Underwood, D G; Yokosawa, A [Argonne National Lab., IL (United States); FNAL E704 Collaboration

1992-10-01

The spin asymmetry A{sub N} for inclusive {pi}{sup 0} production by 200-GeV transversely-polarized protons on a liquid hydrogen target has been measured at Fermilab over a wide range of x{sub F}, with 0.5GeV/c. At x{sub F}>0.3, the asymmetry rises with increasing x{sub F} and reaches a value of A{sub N}=0.15{+-}0.03 in the region 0.6

HPC4Energy Final Report : GE Energy

Energy Technology Data Exchange (ETDEWEB)

Smith, Steven G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Van Zandt, Devin T. [GE Energy Consulting, Schenectady, NY (United States); Thomas, Brian [GE Energy Consulting, Schenectady, NY (United States); Mahmood, Sajjad [GE Energy Consulting, Schenectady, NY (United States); Woodward, Carol S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-02-25

Power System planning tools are being used today to simulate systems that are far larger and more complex than just a few years ago. Advances in renewable technologies and more pervasive control technology are driving planning engineers to analyze an increasing number of scenarios and system models with much more detailed network representations. Although the speed of individual CPU’s has increased roughly according to Moore’s Law, the requirements for advanced models, increased system sizes, and larger sensitivities have outstripped CPU performance. This computational dilemma has reached a critical point and the industry needs to develop the technology to accurately model the power system of the future. The hpc4energy incubator program provided a unique opportunity to leverage the HPC resources available to LLNL and the power systems domain expertise of GE Energy to enhance the GE Concorda PSLF software. Well over 500 users worldwide, including all of the major California electric utilities, rely on Concorda PSLF software for their power flow and dynamics. This pilot project demonstrated that the GE Concorda PSLF software can perform contingency analysis in a massively parallel environment to significantly reduce the time to results. An analysis with 4,127 contingencies that would take 24 days on a single core was reduced to 24 minutes when run on 4,217 cores. A secondary goal of this project was to develop and test modeling techniques that will expand the computational capability of PSLF to efficiently deal with systems sizes greater than 150,000 buses. Toward this goal the matrix reordering implementation time was sped up 9.5 times by optimizing the code and introducing threading.

The Majorana project: sup 7 sup 6 Ge 0 nu beta beta-decay neutrino mass measurement

CERN Document Server

Aalseth, C E

2002-01-01

Interest in, and the relevance of, next-generation 0 nu beta beta-decay experiments is increasing. Even with nonzero neutrino mass strongly suggested by SNO, Super Kamiokande, and similar experiments sensitive to delta m sup 2 , 0 nu beta beta-decay experiments are still the only way to establish the Dirac or Majorana nature of neutrinos by measuring effective electron neutrino mass, . Various theorists have recently argued in favor of a neutrino mass between 0.01 and 1 eV. The Majorana Project aims to probe this effective neutrino mass range, reaching a sensitivity of 0.02-0.07 eV. The experiment relies entirely on proven technology and has been devised based upon the materials, technology, and data analysis demonstrated to produce the lowest background per kilogram of fiducial germanium. The project plan includes 500 kg of germanium detector material enriched to 85% in sup 7 sup 6 Ge, specialized pulse-acquisition electronics and detector segmentation for background rejection, and underground electroformed ...

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

Science.gov (United States)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

The gastroesophageal (GE) scintiscan in detection of GE reflux and pulmonary aspiration in children

International Nuclear Information System (INIS)

Arasu, T.S.; Franken, E.A.; Wyllie, R.; Eigen, H.; Grosfeld, J.L.; Siddiqui, A.R.; Fitzgerald, J.F.

1980-01-01

Gastroesophageal scintiscans and barium examinations were performed on 30 children with documented GE reflux and 13 control patients. After instillation of 2 mCi of Tc99m sulfur colloid into the stomach, serial images of the abdomen and thorax were obtained. The GE scintiscan was positive in 17 of 30 with GE reflux; the barium study was positive in 15 of 30. A positive scintiscan and/or barium study was found in 21 of 30 patients with reflux, and none of the controls. Pulmonay aspiration of gastric contents was not detected by either method. We conclude that the GE scintiscan is complementary to barium studies in the diagnosis of GE reflux, and neither study approaches the accuracy of more sophisticated tests [fr

On-site hydrolytic enzymes production from fungal co-cultivation of Bermuda grass and corn cob.

Science.gov (United States)

Amaro-Reyes, Aldo; Gracida, Jorge; Huizache-Peña, Nelson; Elizondo-García, Norberto; Salazar-Martínez, José; García Almendárez, Blanca E; Regalado, Carlos

2016-07-01

Solid state fermentation (SSF) is used to produce industrial enzymes. The objective of this study was to use a co-culture of Aspergillus niger GS1 and Trichoderma reesei, grown on a mixture of Bermuda grass and corn cob to obtain fermented forage (FF) rich in hydrolytic enzymes, as a value added ingredient for animal feed. FPase, amylase and xylanase productivities (dry matter, DM) were 8.8, 181.4, and 42.1Ug(-1)h(-1), respectively (1U=reducing sugars released min(-1)), after 12-16h of SSF with C/N=60. Cellulose, hemicellulose and lignin decreased 1.6-, 2.7- and 1.9-fold (DM), respectively. In vitro ruminal and true digestibility of DM was improved 2.4- and 1.4-fold. Ruminal digestion of FF reduced 1.32-fold the acetate:propionate ratio, which may reduce the environmental impact of ruminants feeding. On-site hydrolytic enzymes productivity using SSF without enzymes extraction could be of economic potential for digestibility improvement in animal feed. Copyright © 2016 Elsevier Ltd. All rights reserved.

Status report of a 500 GeV S-band linear collider study

International Nuclear Information System (INIS)

Balewski, K.; Bieler, M.; Bothe, W.; Bredehoeft, K.; Brinkmann, R.; Choroba, S.; Dwersteg, B.; Ebert, M.; Febel, A.; Fischer, R.; Floettmann, K.; Holzer, B.; Juergensen, H.; Kouptsidis, J.; Kumpfert, H.; Loeffler, F.; Marx, M.; Narciss, H.; Neumann, R.; Peters, F.; Peters, M.; Pillat, P.; Rossbach, J.; Schumann, G.; Schwarz, W.; Vilcins, S.; Voss, G.A.; Werner, M.; Wipf, S.; Wuempelmann, H.; Beyer, H.G.; Dehler, M.; Dohlus, M.; Ebeling, F.; Hahne, P.; Holtkamp, N.; Klatt, R.; Krawczyk, F.; Tsakanov, V.; Rienen, U. van; Wanzenberg, R.; Weiland, T.; Wolter, H.

1991-12-01

This paper describes the status of a feasibility study of a 500 GeV center of mass linear collider, which is based almost entirely on conventional rf-technology. The basic components are S-band travelling wave, constant-gradient accelerating structures and 130 MW klystrons. 3 GeV damping rings are used to produce extremely small emittances in both planes which are in the same range as those of the next generation synchrotron light sources. Very strong focussing in the linear accelerator and near the interaction region, as well as a dedicated chromatic correction scheme, are necessary to achieve spot sizes that have not been produced yet. The methods envisaged to stabilize the motion of the tiny beam along the 15 km long linac seem promising and give rise to be assumption that the proposed values can be reached with todays' available technology. (orig.)

Environmental assessment of metal exposure to corals living in Castle Harbour, Bermuda

Science.gov (United States)

Prouty, N.G.; Goodkin, N.F.; Jones, R.; Lamborg, C.H.; Storlazzi, C.D.; Hughen, K.A.

2013-01-01

Environmental contamination in Castle Harbour, Bermuda, has been linked to the dissolution and leaching of contaminants from the adjacent marine landfill. This study expands the evidence for environmental impact of leachate from the landfill by quantitatively demonstrating elevated metal uptake over the last 30 years in corals growing in Castle Harbour. Coral Pb/Ca, Zn/Ca and Mn/Ca ratios and total Hg concentrations are elevated relative to an adjacent control site in John Smith's Bay. The temporal variability in the Castle Harbour coral records suggests that while the landfill has increased in size over the last 35 years, the dominant input of metals is through periodic leaching of contaminants from the municipal landfill and surrounding sediment. Elevated contaminants in the surrounding sediment suggest that resuspension is an important transport medium for transferring heavy metals to corals. Increased winds, particularly during the 1990s, were accompanied by higher coral metal composition at Castle Harbour. Coupled with wind-induced resuspension, interannual changes in sea level within the Harbour can lead to increased bioavailability of sediment-bound metals and subsequent coral metal assimilation. At John Smith's Bay, large scale convective mixing may be driving interannual metal variability in the coral record rather than impacts from land-based activities. Results from this study provide important insights into the coupling of natural variability and anthropogenic input of contaminants to the nearshore environment.

Molecular beam deposition of Al2O3 on p-Ge(001)/Ge0.95Sn0.05 heterostructure and impact of a Ge-cap interfacial layer

International Nuclear Information System (INIS)

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M.; Sun, X.; Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S.

2011-01-01

We investigated the molecular beam deposition of Al 2 O 3 on Ge 0.95 Sn 0.05 surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge 1-x Sn x and Ge/Ge 1-x Sn x surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al 2 O 3 high-κ gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge 1-x Sn x /Al 2 O 3 gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge 1-x Sn x layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D it ) in the range of 10 12 eV -1 cm -2 in mid gap and higher close to the valence band edge.

The preparation of Nb3Ge thin film superconductors in a UHV evaporation and sputter device

International Nuclear Information System (INIS)

Krevet, B.; Schauer, W.; Wuechner, F.

1978-10-01

Thin film techniques like evaporation or sputtering are remarkbly suitable to vary the metallurgical and physical properties of superconductors in a wide range. In the case of the A15-compound Nb 3 Ge only these preparation techniques allow us to produce a metastable pure phase in stoichiometric composition and to study its superconducting properties. The presen report describes two UHV-plants to produce superconducting films by multisource coevaporation and cosputtering. Of special importance are the constancy, monitoring and control of the evaporation rate, and the thermalization of the sputter components on the other hand. The experimental methods used are explained in detail and discussed together with the results of Nb 3 Ge films. With the preparation parameters suitably chosen both techniques allow to prepare reproducibly Nb 3 Ge films with 21 K transition temperature (onset); under optimized conditions Tc values up to 22.3 K have been reached. (orig.) [de

Physical characteristics of GE Senographe Essential and DS digital mammography detectors

International Nuclear Information System (INIS)

Ghetti, Caterina; Borrini, Adriano; Ortenzia, Ornella; Rossi, Raffaella; Ordonez, Pedro L.

2008-01-01

The purpose of this study was to investigate physical characteristics of two full field digital mammography (FFDM) systems (GE Senographe Essential and DS). Both are indirect conversion (x ray to light) a-Si flat panels coupled with a CsI(Tl) scintillator. The examined systems have the same pixel size (100 μm) but a different field of view: a conventional size 23x19.2 cm 2 and a large field 24x30.7 cm 2 , specifically designed to image large breasts. In the GE Senographe Essential model relevant improvements in flat panel design were implemented and new deposition tools for metal, a-Si, and CsI(Tl) were introduced by GE. These changes in detector design are expected to be beneficial for advanced applications such as breast tomosynthesis. The presampling modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were measured for a wide range of exposure (25-240 μGy) with a RQA-M2 technique (28 kVp with a Mo/Mo target/filter combination and 2 mm of additional aluminum filtration). At 1, 2, and at 4 lp/mm MTF is equal to 0.9, 0.76, and 0.46 for the conventional field detector and to 0.85, 0.59, and 0.24 for the large field detector. The latter detector exhibits an improved NNPS due to a lower electronic noise and a better DQE that reaches 60%. In addition a contrast-detail analysis was performed with CDMAM 3.4 phantom and CDCOM software: GE Senographe DS showed statistically significant poorer detection ability in comparison with the GE Senographe Essential. These results could have been expected, at least qualitatively, considering the relative DQE of the two systems

Magnetism and metal insulator transition in FeSi and FeGe. Ab Initio investigations of the electronic structure; Magnetismus und Metall-Isolator-Uebergang in FeSi und FeGe. Ab-initio-Untersuchungen der elektronischen Struktur

Energy Technology Data Exchange (ETDEWEB)

Neef, Matthias

2007-03-19

Aim of this thesis was to reach by a systematic study of different ab initio procedures an improved description of the electronic properties of FeSi and FeGe. Central result is the itinerant description of FeSi as a semiconductor in the neighbourhood of a ferromagnetic instability. The regardment of the nonlocal exchange in the effective one-particle approximation leads to a metastable magnetic state scarcely above the magnetic ground state. The application of the hybrid functional leads to a 1st order metal-isolator transition for large lattice parameters: FeSi transforms at increasement of the lattice parameter from an unmagnetic isolator to a magnetic metal. A similar behavior is found in the isostructural compound FeGe. The two systems FeSi and FeGe were systematically and detailedly analyzed by means of ab initio procedures. Thereby the structural, electronic, and magnetic properties were studied with DFT and HF calculations. Both calculations with spin polarization and without spin polarization were performed.

Synthesis and fundamental properties of stable Ph(3)SnSiH(3) and Ph(3)SnGeH(3) hydrides: model compounds for the design of Si-Ge-Sn photonic alloys.

Science.gov (United States)

Tice, Jesse B; Chizmeshya, Andrew V G; Groy, Thomas L; Kouvetakis, John

2009-07-06

The compounds Ph(3)SnSiH(3) and Ph(3)SnGeH(3) (Ph = C(6)H(5)) have been synthesized as colorless solids containing Sn-MH(3) (M = Si, Ge) moieties that are stable in air despite the presence of multiple and highly reactive Si-H and Ge-H bonds. These molecules are of interest since they represent potential model compounds for the design of new classes of IR semiconductors in the Si-Ge-Sn system. Their unexpected stability and high solubility also makes them a safe, convenient, and potentially useful delivery source of -SiH(3) and -GeH(3) ligands in molecular synthesis. The structure and composition of both compounds has been determined by chemical analysis and a range of spectroscopic methods including multinuclear NMR. Single crystal X-ray structures were determined and indicated that both compounds condense in a Z = 2 triclinic (P1) space group with lattice parameters (a = 9.7754(4) A, b = 9.8008(4) A, c = 10.4093(5) A, alpha = 73.35(10)(o), beta = 65.39(10)(o), gamma = 73.18(10)(o)) for Ph(3)SnSiH(3) and (a = 9.7927(2) A, b = 9.8005(2) A, c = 10.4224(2) A, alpha = 74.01(3)(o), beta = 65.48(3)(o), gamma = 73.43(3)(o)) for Ph(3)SnGeH(3). First principles density functional theory simulations are used to corroborate the molecular structures of Ph(3)SnSiH(3) and Ph(3)SnGeH(3), gain valuable insight into the relative stability of the two compounds, and provide correlations between the Si-Sn and Ge-Sn bonds in the molecules and those in tetrahedral Si-Ge-Sn solids.

Bi surfactant mediated growth for fabrication of Si/Ge nanostructures and investigation of Si/Ge intermixing by STM

Energy Technology Data Exchange (ETDEWEB)

Paul, N.

2007-10-26

In the thesis work presented here, we show that Bi is more promising surfactant material than Sb. We demonstrate that by using Bi as a terminating layer on Ge/Si surface, it is possible to distinguish between Si and Ge in Scanning tunnelling microscope (STM). Any attempt to utilize surfactant mediated growth must be preceded by a thorough study of its effect on the the system being investigated. Thus, the third chapter of this thesis deals with an extensive study of the Bi surfactant mediated growth of Ge on Si(111) surface as a function of Ge coverage. The growth is investigated from the single bilayer Ge coverage till the Ge coverage of about 15 BL when the further Ge deposition leads to two-dimensional growth. In the fourth chapter, the unique property of Bi terminating layer on Ge/Si surface to result in an STM height contrast between Si and Ge is explained with possible explanations given for the reason of this apparent height contrast. The controlled fabrication of Ge/Si nanostructures such as nanowires and nanorings is demonstrated. A study on Ge-Si diffusion in the surface layers by a direct method such as STM was impossible previously because of the similar electronic structure of Ge and Si. Since with the Bi terminating surface layer, one is able to distinguish between Ge and Si, the study of intermixing between them is also possible using STM. This method to distinguish between Si and Ge allows one to study intermixing on the nanoscale and to identify the fundamental diffusion processes giving rise to the intermixing. In Chapter 5 we discuss how this could prove useful especially as one could get a local probe over a very narrow Ge-Si interface. A new model is proposed to estimate change in the Ge concentration in the surface layer with time. The values of the activation energies of Ge/Si exchange and Si/Ge exchange are estimated by fitting the experimental data with the model. The Ge/Si intermixing has been studied on a surface having 1 ML Bi ({radical

Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.

1985-11-01

An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

Implications of the 750 GeV γγ resonance as a case study for the International Linear Collider

International Nuclear Information System (INIS)

Fujii, Keisuke; Grojean, Christophe; Univ. Autonoma de Barcelon; Peskin, Michael E.

2016-07-01

If the γγ resonance at 750 GeV suggested by 2015 LHC data turns out to be a real effect, what are the implications for the physics case and upgrade path of the International Linear Collider? Whether or not the resonance is confirmed, this question provides an interesting case study testing the robustness of the ILC physics case. In this note, we address this question with two points: (1) Almost all models proposed for the new 750 GeV particle require additional new particles with electroweak couplings. The key elements of the 500 GeV ILC physics program - precision measurements of the Higgs boson, the top quark, and 4-fermion interactions - will powerfully discriminate among these models. This information will be important in conjunction with new LHC data, or alone, if the new particles accompanying the 750 GeV resonance are beyond the mass reach of the LHC. (2) Over a longer term, the energy upgrade of the ILC to 1 TeV already discussed in the ILC TDR will enable experiments in γγ and e"+e"- collisions to directly produce and study the 750 GeV particle from these unique initial states.

Implications of the 750 GeV γγ Resonance as a Case Study for the International Linear Collider

Energy Technology Data Exchange (ETDEWEB)

Fujii, Keisuke [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Grojean, Christophe [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Univ. Autonoma de Barcelona (Spain). Inst. Catalana de Recerca i Estudis Avancats (ICREA) and Inst. de Fisica d' Altes Energies (IFAE); Peskin, Michael E. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Barklow, Tim [SLAC National Accelerator Lab., Menlo Park, CA (United States); Gao, Yuanning [Tsinghua Univ., Beijing (China). Center for High Energy Physics; Kanemura, Shinya [Univ. of Toyama (Japan). Dept. of Physics; Kim, Hyungdo [Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy; List, Jenny [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Nojiri, Mihoko [High Energy Accelerator Research Organization (KEK), Tsukuba (Japan); Univ. of Tokyo (Japan). Kavli Inst. for the Physics and Mathematics of the Universe; Perelstein, Maxim [Cornell Univ., Ithaca, NY (United States). Lab. for Elementary Particle Physics; Poschl, Roman [Univ. Paris-Sud, Orsay (France). Linear Accelerator Lab. (LAL). Centre Scientifique d' Orsay; Reuter, Jurgen [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Simon, Frank [Max Planck Inst. for Physics (MPP), Munich (Germany); Tanabe, Tomohiko [Univ. of Tokyo (Japan). International Center for Elementary Particle Physics (ICEPP); Yu, Jaehoon [Univ. of Texas, Arlington, TX (United States). Dept. of Physics; Wells, James D. [Univ. of Michigan, Ann Arbor, MI (United States). Michigan Center for Theoretical Physics; Falkowski, Adam [Univ. Paris-Sud, Orsay (France). Lab. of Theoretical Physics (LPT); Matsumoto, Shigeki [Univ. of Tokyo (Japan). Kavli Inst. for the Physics and Mathematics of the Universe; Moroi, Takeo [Univ. of Tokyo (Japan). Dept. of Physics; Richard, Francois [Univ. Paris-Sud, Orsay (France). Linear Accelerator Lab. (LAL). Centre Scientifique d' Orsay; Tian, Junping [Univ. of Tokyo (Japan). International Center for Elementary Particle Physics (ICEPP); Vos, Marcel [Spanish National Research Council (CSIC), Valencia (Spain) and Univ. of Valencia (Spain). Inst. for Corpuscular Physics (IFIC); Yokoya, Hiroshi [Korean Inst. for Advanced Study (KIAS), Seoul (Korea, Republic of ). Quantum Universe Center; Murayama, Hitoshi [Univ. of Tokyo (Japan). Kavli Inst. for the Physics and Mathematics of the Universe; Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Yamamoto, Hitoshi [Tohoku Univ., Sendai (Japan). Dept. of Physics

2016-07-14

If the γγ resonance at 750 GeV suggested by 2015 LHC data turns out to be a real effect, what are the implications for the physics case and upgrade path of the International Linear Collider? Whether or not the resonance is confirmed, this question provides an interesting case study testing the robustness of the ILC physics case. In this note, we address this question with two points: (1) Almost all models proposed for the new 750 GeV particle require additional new particles with electroweak couplings. The key elements of the 500 GeV ILC physics program - precision measurements of the Higgs boson, the top quark, and 4-fermion interactions - will powerfully discriminate among these models. This information will be important in conjunction with new LHC data, or alone, if the new particles accompanying the 750 GeV resonance are beyond the mass reach of the LHC. (2) Over a longer term, the energy upgrade of the ILC to 1 TeV already discussed in the ILC TDR will enable experiments in γγ and e⁺e^- collisions to directly produce and study the 750 GeV particle from these unique initial states.

Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

Science.gov (United States)

Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

2018-04-01

The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

Crystal structure of LaFe5Ge3O15 = LaFe5[GeO4][Ge2O7]O4

International Nuclear Information System (INIS)

Genkina, E.A.; Maksimov, B.A.; Mill, B.V.

1991-01-01

The authors have determined the structure of a new lanthanum-iron germanate LaFe 5 [GeO 4 ][GeO 4 ][Ge 2 O 7 ]O 4 (a = 18.040(4), b = 17.012(4), c = 7.591(1) angstrom, V = 2330.2(9) angstrom 3 , Z = 8, ρ t = 4.99 g/cm 3 , space ground Cmca, 1976 I hkl ≥ 3 σ(I), R = 4.5%). The compound is interesting because the framework simultaneously contains ortho- and diorthogroups of Ge and because of a classical set of coordination numbers (4,5,6) characteristic of trivalent iron within the composition of one structure. The coordination polyhedron of La has nine vertices

Unexpected Ge-Ge contacts in the two-dimensional Ge{sub 4}Se{sub 3}Te phase and analysis of their chemical cause with the density of energy (DOE) function

Energy Technology Data Exchange (ETDEWEB)

Kuepers, Michael; Konze, Philipp M.; Maintz, Stefan; Steinberg, Simon [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Mio, Antonio M.; Cojocaru-Miredin, Oana; Zhu, Min; Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University (Germany); Mueller, Merlin; Mayer, Joachim [Gemeinschaftslabor fuer Elektronenmikroskopie, RWTH Aachen University (Germany); Luysberg, Martina [Ernst-Ruska-Center, Forschungszentrum Juelich GmbH (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH Aachen University (Germany)

2017-08-14

A hexagonal phase in the ternary Ge-Se-Te system with an approximate composition of GeSe{sub 0.75}Te{sub 0.25} has been known since the 1960s but its structure has remained unknown. We have succeeded in growing single crystals by chemical transport as a prerequisite to solve and refine the Ge{sub 4}Se{sub 3}Te structure. It consists of layers that are held together by van der Waals type weak chalcogenide-chalcogenide interactions but also display unexpected Ge-Ge contacts, as confirmed by electron microscopy analysis. The nature of the electronic structure of Ge{sub 4}Se{sub 3}Te was characterized by chemical bonding analysis, in particular by the newly introduced density of energy (DOE) function. The Ge-Ge bonding interactions serve to hold electrons that would otherwise go into antibonding Ge-Te contacts. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

International Nuclear Information System (INIS)

Kavetskyy, T.; Shpotyuk, O.; Kaban, I.; Hoyer, W.

2008-01-01

Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the γ-irradiated and annealed after γ-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak (FSDP) is detected at around 1.1 A -1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between γ-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 A are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts

Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

DEFF Research Database (Denmark)

Shim, Irene; Baba, M. Sai; Gingerich, K.A.

2002-01-01

The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

Single ferromagnetic fluctuations in UCoGe revealed by 73Ge- and 59Co-NMR studies

Science.gov (United States)

Manago, Masahiro; Ishida, Kenji; Aoki, Dai

2018-02-01

73Ge and 59Co nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) measurements have been performed on a 73Ge-enriched single-crystalline sample of the ferromagnetic superconductor UCoGe in the paramagnetic state. The 73Ge NQR parameters deduced from NQR and NMR are close to those of another isostructural ferromagnetic superconductor URhGe. The Knight shifts of the Ge and Co sites are well scaled to each other when the magnetic field is parallel to the b or c axis. The hyperfine coupling constants of Ge are estimated to be close to those of Co. The large difference of spin susceptibilities between the a and b axes could lead to the different response of the superconductivity and ferromagnetism with the field parallel to these directions. The temperature dependence of the nuclear spin-lattice relaxation rates 1 /T1 at the two sites is similar to each other above 5 K. These results indicate that the itinerant U-5 f electrons are responsible for the ferromagnetism in this compound, consistent with previous studies. The similarities and differences in the three ferromagnetic superconductors are discussed.

Centrality dependence of charged antiparticle to particle ratios near midrapidity in d+Au collisions at √(sNN )=200 GeV

Science.gov (United States)

Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

2004-07-01

The ratios of the yields of charged antiparticles to particles have been obtained for pions, kaons, and protons near midrapidity for d+Au collisions at √(sNN )=200 GeV as a function of centrality. The reported values represent the ratio of the yields averaged over the rapidity range of 0.1< yπ <1.3 and 0< yK,p <0.8 , where positive rapidity is in the deuteron direction, and for transverse momenta 0.1< pπ,K T <1 GeV/c and 0.3< ppT <1 GeV/c . Within the uncertainties, a lack of centrality dependence is observed in all three ratios. The data are compared to results from other systems and model calculations.

Room Temperature Ferromagnetic Mn:Ge(001

Directory of Open Access Journals (Sweden)

George Adrian Lungu

2013-12-01

Full Text Available We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001, heated at relatively high temperature (starting with 250 °C. The samples were characterized by low energy electron diffraction (LEED, scanning tunneling microscopy (STM, high resolution transmission electron microscopy (HRTEM, X-ray photoelectron spectroscopy (XPS, superconducting quantum interference device (SQUID, and magneto-optical Kerr effect (MOKE. Samples deposited at relatively elevated temperature (350 °C exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001 crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001. The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

International Nuclear Information System (INIS)

Lin, Yiheng; Xia, Guangrui; Yasuda, Hiroshi; Wise, Rick; Schiekofer, Manfred; Benna, Bernhard

2014-01-01

The use of carbon (C) in SiGe base layers is an important approach to control the base layer dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor (HBT) performance. This work quantitatively investigated the carbon impacts on P diffusion in Si 0.82 Ge 0.18 :C and Si:C under rapid thermal anneal conditions. The carbon molar fraction is up to 0.32%. The results showed that the carbon retardation effect on P diffusion is less effective for Si 0.82 Ge 0.18 :C than for Si:C. In Si 0.82 Ge 0.18 :C, there is an optimum carbon content at around 0.05% to 0.1%, beyond which more carbon incorporation does not retard P diffusion any more. This behavior is different from the P diffusion behavior in Si:C and the B in Si:C and low Ge SiGe:C, which can be explained by the decreased interstitial-mediated diffusion fraction f I P, SiGe to 95% as Ge content increases to 18%. Empirical models were established to calculate the time-averaged point defect concentrations and effective diffusivities as a function of carbon and was shown to agree with previous studies on boron, phosphorus, arsenic and antimony diffusion with carbon.

The study on Ge-68 production

International Nuclear Information System (INIS)

Yang, Seung Dae; Kim, Sang Wook; Hur, Min Goo

2009-06-01

The Ge-68 is a correction source of PET and is used in radiopharmaceuticals synthesis. This project is mainly aimed to produce the Ge-68. Based on this project results, the local Ge-68 production can be possible and the revitalization of the radioisotope utilization research areas can be accomplished. The characteristics of the Ge-68 and Ga-68 are obtained and analyzed. The production conditions are also developed, and the domestic and overseas status of the art are considered. The stacked foil target is designed using Al disc and dried Ga 2 O 3 powder, and the irradiation target is also designed. The cross section of the nat. Ga(p,xn) 68 Ge reaction is obtained using the developed target. The separation experiment of cold Ge/Ga in the H 2 SO 4 -HCl solution are carried out as a simulation experiment of the radioactive Ge/Ga sources. The separation of Ge/Ga by liquid extraction of CCl 4 in 8M HCl is also accomplished. And the synthesis experiment of the Hematophorphyrin-Ga complex is performed

Dilepton and dihadron production in proton-nucleus collisions at 800 GeV

International Nuclear Information System (INIS)

Mishra, C.S.

1990-05-01

A high statistics measurement of the atomic mass dependence of Drell-Yan, J/ψ, ψ' and Υ production induced by 800 GeV protons on deuterium, carbon, calcium, iron and tungsten targets has been performed at FermiLab (E772). The data consist of about 700,000 muon pairs covering the mass region 3 GeV ≤Mμμ 2 2 < 0.1 is slightly less than unity for heavy nuclei. J/ψ and ψ' production are strongly suppressed in heavy nuclei. An upgraded version on the spectrometer designed to measure two-body decays of neutral c and b-quark hadrons (E789) will be discussed. 17 refs., 8 figs

Shallow acceptors in Ge/GeSi heterostructures with quantum wells in magnetic field

International Nuclear Information System (INIS)

Aleshkin, V.Ya.; Antonov, A.V.; Veksler, D.B.; Gavrilenko, V.I.; Erofeeva, I.V.; Ikonnikov, A.V.; Kozlov, D.V.; Spirin, K.E.; Kuznetsov, O.A.

2005-01-01

One investigated both theoretically and experimentally into shallow acceptors in Ge/GeSi heterostructures with quantum wells (QW) in a magnetic field. It is shown that alongside with lines of cyclotron resonance in magnetoabsorption spectra one observes transitions from the ground state of acceptor to the excited ones associated with the Landau levels from the first and the second subbands of dimensional quantization, and resonance caused by ionization of A + -centres. To describe impurity transitions in Ge/GeSi heterostructures with QW in a magnetic field and to interpret the experiment results in detail one uses numerical method of calculation based on expansion of wave function of acceptor in terms of basis of wave functions of holes in QW in the absence of magnetic field [ru

Graphene growth on Ge(100)/Si(100) substrates by CVD method.

Science.gov (United States)

Pasternak, Iwona; Wesolowski, Marek; Jozwik, Iwona; Lukosius, Mindaugas; Lupina, Grzegorz; Dabrowski, Pawel; Baranowski, Jacek M; Strupinski, Wlodek

2016-02-22

The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(-1).

Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

International Nuclear Information System (INIS)

Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

2014-01-01

We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

Determination of hyperfine fields and atomic ordering in NiMnFeGe exhibiting martensitic transformation

Directory of Open Access Journals (Sweden)

Satuła Dariusz

2015-03-01

Full Text Available The hyperfine fields and atomic ordering in Ni1−xFexMnGe (x = 0.1, 0.2, 0.3 alloys were investigated using X-ray diffraction and Mössbauer spectroscopy at room temperature. The X-ray diffraction measurements show that the samples with x = 0.2, 0.3 crystallized in the hexagonal Ni2In-type of structure, whereas in the sample with x = 0.1, the coexistence of two phases, Ni2In- and orthorhombic TiNiSi-type of structures, were found. The Mössbauer spectra measured with x = 0.2, 0.3 show three doublets with different values of isomer shift (IS and quadrupole splitting (QS related to three different local surroundings of Fe atoms in the hexagonal Ni2In-type structure. It was shown that Fe atoms in the hexagonal Ni2In-type structure of as-cast Ni1−xFexMnGe alloys are preferentially located in Ni sites and small amount of Fe is located in Mn and probably in Ge sites. The spectrum for x = 0.1 shows the doublets in the central part of spectrum and a broad sextet. The doublets originate from the Fe atoms in the paramagnetic state of hexagonal Ni2In-type structure, whereas the sextet results from the Fe atoms in orthorhombic TiNiSi-type structure.

Sn-based Ge/Ge{sub 0.975}Sn{sub 0.025}/Ge p-i-n photodetector operated with back-side illumination

Energy Technology Data Exchange (ETDEWEB)

Chang, C.; Li, H.; Huang, S. H.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Sun, G.; Soref, R. A. [Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

2016-04-11

We report an investigation of a GeSn-based p-i-n photodetector grown on a Ge wafer that collects light signal from the back of the wafer. Temperature dependent absorption measurements performed over a wide temperature range (300 K down to 25 K) show that (a) absorption starts at the indirect bandgap of the active GeSn layer and continues up to the direct bandgap of the Ge wafer, and (b) the peak responsivity increases rapidly at first with decreasing temperature, then increases more slowly, followed by a decrease at the lower temperatures. The maximum responsivity happens at 125 K, which can easily be achieved with the use of liquid nitrogen. The temperature dependence of the photocurrent is analyzed by taking into consideration of the temperature dependence of the electron and hole mobility in the active layer, and the analysis result is in reasonable agreement with the data in the temperature regime where the rapid increase occurs. This investigation demonstrates the feasibility of a GeSn-based photodiode that can be operated with back-side illumination for applications in image sensing systems.

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

Science.gov (United States)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Influence of Ge on magnetic and structural properties of Joule-heated Co-based ribbons: Giant magnetoimpedance response

International Nuclear Information System (INIS)

Muraca, D.; Cremaschi, V.; Knobel, M.; Sirkin, H.

2008-01-01

Studies of magnetic and structural properties of Fe 3.5 Co 66.5 Si 12-x Ge x B 18 (x=0, 3, and 6) soft magnetic ribbons obtained by melt-spinning were performed. The samples were submitted to Joule-heating treatments with different maximum current values (0.01, 0.05, 0.1, 0.2, and 0.8 A, respectively) with steps of 0.01 A and times by step of 1, 2, and 10 s). X-ray diffraction, temperature dependence of magnetization (for the as-quenched samples), coercivity and giant magnetoimpedance (GMI), measured at different frequencies (100, 500, and 900 kHz, respectively) were performed. All the samples crystallized at annealing currents higher than 0.4 A, which was consistent with the magnetic hardening of the material. Coercivities less than 1 A/m were obtained for the three samples between 0.1 and 0.2 A. Maximum value of GMI response was observed for the sample without Ge in the as-quenched state

Experimental determination of the Ta–Ge phase diagram

Energy Technology Data Exchange (ETDEWEB)

Araújo Pinto da Silva, Antonio Augusto, E-mail: aaaps@ppgem.eel.usp.br [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Coelho, Gilberto Carvalho [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); UniFoa – Centro Universitário de Volta Redonda, Núcleo de Pesquisa, Campus Três Poços, Avenida Paulo Erlei Alves Abrantes, 1325, Bairro Três Poços, 27240-560 Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Suzuki, Paulo Atsushi [EEL/USP – Escola de Engenharia de Lorena (EEL), Universidade de São Paulo (USP), Pólo Urbo-Industrial Gleba AI-6, 12602-810 Lorena, SP (Brazil); Fiorani, Jean Marc; David, Nicolas; Vilasi, Michel [Université de Lorraine, Institut Jean Lamour, Faculté des Sciences et Technologies, BP 70239, F-54506 Vandoeuvre-lès-Nancy (France)

2013-11-05

Highlights: •Ta–Ge phase diagram propose for the first time. •The phase αTa{sub 5}Ge{sub 3} was not observed in samples investigated in this work. •Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. -- Abstract: In the present work, the Ta–Ge phase diagram has been experimentally studied, considering the inexistence of a Ta–Ge phase diagram in the literature. The samples were prepared via arc melting and characterized by Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS) and X-ray Diffraction (XRD). The intermetallics phases βTa{sub 3}Ge, αTa{sub 3}Ge, βTa{sub 5}Ge{sub 3} and TaGe{sub 2} where confirmed in this system. Three eutectics reactions where determined with the liquid compositions at 20.5; 28.0; 97.0 at.% Ge. The phases βTa{sub 3}Ge and βTa{sub 5}Ge{sub 3} solidifies congruently while TaGe{sub 2} is formed through a peritectic transformation. The temperature of the Ta-rich eutectic (L ↔ Ta{sub ss} + βTa{sub 3}Ge) was measured by the Pirani-Alterthum method at 2440 °C and the Ge-rich eutectic (L ↔ TaGe{sub 2} + Ge{sub ss}) by DTA at 937 °C.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

2016-01-01

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Study of Si-Ge interdiffusion with phosphorus doping

KAUST Repository

Cai, Feiyang

2016-10-28

Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

Effect of Ge atoms on crystal structure and optoelectronic properties of hydrogenated Si-Ge films

Science.gov (United States)

Li, Tianwei; Zhang, Jianjun; Ma, Ying; Yu, Yunwu; Zhao, Ying

2017-07-01

Optoelectronic and structural properties of hydrogenated microcrystalline silicon-germanium (μc-Si1-xGex:H) alloys prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) were investigated. When the Ge atoms were predominantly incorporated in amorphous matrix, the dark and photo-conductivity decreased due to the reduced crystalline volume fraction of the Si atoms (XSi-Si) and the increased Ge dangling bond density. The photosensitivity decreased monotonously with Ge incorporation under higher hydrogen dilution condition, which was attributed to the increase in both crystallization of Ge and the defect density.

Synthesis and characterization of BaTi1−xSnxO3–0.5 mol%GeO2

International Nuclear Information System (INIS)

Bucur, Raul Alin; Bucur, Alexandra Ioana; Novaconi, Stefan; Nicoara, Irina

2012-01-01

Highlights: ► BaTi 1−x Sn x O 3 –0.5 mol%GeO 2 (x = 0, 0.1, 0.3, 0.5) ceramics were prepared at 1190 °C. ► GeO 2 improves crystallization and densification. ► Anomalies are noted for the rhombohedral–orthorhombic transition of BT–0.5Ge. ► For x = 0.3 and 0.5, ε′ r exhibit nearly constant variation between 200 and 400 K. - Abstract: Microcrystalline BaTi 1−x Sn x O 3 –0.5 mol%GeO 2 x = 0, 0.1, 0.3, 0.5 (BTSx–0.5Ge) and BaTiO 3 (BT) ceramics (1–0.5 μm) were prepared by a conventional solid-state reaction method. The crystalline structure of the samples was examined using XRD, the microstructure was analyzed by means of electron microscope and the density was measured by the Archimede’s method. The sintered ceramic disks have a tetragonal symmetry for BT, pseudo cubic for BTS1–0.5Ge and cubic symmetry for the other studied materials, with a gradual increase of unit cell dimensions. Small addition of GeO 2 can improve the density of BT ceramics: 97.9% for BT–0.5Ge, and 96.21% for pure BT. The highest degree of densification in the case of tin doping is achieved for BTS1–0.5Ge (96.93%). The formation of a liquid phase can lead to an anomalous grain growth, and in the case of BT–0.5Ge the grains are completely surrounded by a frozen eutectic melt. For the dielectric constant, while increasing the Sn concentration, the T C gradually shifts towards lower temperatures, and the peak of this transition becomes broader. The lowering of T C is mostly due to the concentration of tin ions and in a much delicate way to Ge ions. Anomalies are noticed for the orthorhombic transition, where the permittivity is higher than the same transition of the matrix (BT), with a shift towards higher temperatures. The BTS3–0.5Ge and BTS5–0.5Ge are the most stable compositions in terms of dielectric behavior, since in the temperature range 200–400 K, ε′ r is almost constant. Therefore, these compositions can be used for devices that operate over a

Pseudorapidity distributions of charged particles produced in bar pp interactions at √s =630 and 1800 GeV

International Nuclear Information System (INIS)

Abe, F.; Amidei, D.; Apollinari, G.; Ascoli, G.; Atac, M.; Auchincloss, P.; Baden, A.R.; Barbaro-Galtieri, A.; Barnes, V.E.; Bedeschi, F.; Belforte, S.; Bellettini, G.; Bellinger, J.; Bensinger, J.; Beretvas, A.; Berge, P.; Bertolucci, S.; Bhadra, S.; Binkley, M.; Blair, R.; Blocker, C.; Bofill, J.; Booth, A.W.; Brandenburg, G.; Brown, D.; Byon, A.; Byrum, K.L.; Campbell, M.; Carey, R.; Carithers, W.; Carlsmith, D.; Carroll, J.T.; Cashmore, R.; Cervelli, F.; Chadwick, K.; Chapin, T.; Chiarelli, G.; Chinowsky, W.; Cihangir, S.; Cline, D.; Connor, D.; Contreras, M.; Cooper, J.; Cordelli, M.; Curatolo, M.; Day, C.; DelFabbro, R.; Dell'Orso, M.; DeMortier, L.; Devlin, T.; DiBitonto, D.; Diebold, R.; Dittus, F.; DiVirgilio, A.; Elias, J.E.; Ely, R.; Errede, S.; Esposito, B.; Flaugher, B.; Focardi, E.; Foster, G.W.; Franklin, M.; Freeman, J.; Frisch, H.; Fukui, Y.; Garfinkel, A.F.; Giannetti, P.; Giokaris, N.; Giromini, P.; Gladney, L.; Gold, M.; Goulianos, K.; Grosso-Pilcher, C.; Haber, C.; Hahn, S.R.; Handler, R.; Harris, R.M.; Hauser, J.; Hessing, T.; Hollebeek, R.; Hu, P.; Hubbard, B.; Hurst, P.; Huth, J.; Jensen, H.; Johnson, R.P.; Joshi, U.; Kadel, R.W.; Kamon, T.; Kanda, S.; Kardelis, D.A.; Karliner, I.; Kearns, E.; Kephart, R.; Kesten, P.; Keutelian, H.; Kim, S.; Kirsch, L.; Kondo, K.; Kruse, U.; Kuhlmann, S.E.; Laasanen, A.T.; Li, W.; Liss, T.; Lockyer, N.; Marchetto, F.; Markeloff, R.; Markosky, L.A.; McIntyre, P.; Menzione, A.; Meyer, T.; Mikamo, S.; Miller, M.; Mimashi, T.; Miscetti, S.; Mishina, M.; Miyashita, S.; Mondal, N.; Mori, S.; Morita, Y.; Mukherjee, A.; Newman-Holmes, C.; Nodulman, L.; Paoletti, R.; Para, A.; Patrick, J.; Phillips, T.J.; Piekarz, H.; Plunkett, P.; Pondrom, L.; Proudfoot, J.; Punzi, G.; Quarrie, D.; Ragan, K.; Redlinger, G.; Rhoades, J.; Rimondi, F.; Ristori, L.; Rohaly, T.; Roodman, A.; Sansoni, A.; Sard, R.; Scarpine, V.; Schlabach, P.; Schmidt, E.E.; Schoessow, P.; Schub, M.H.; Schwitters, R.; Scribano, A.; Segler, S.

1990-01-01

We present measurements of the pseudorapidity (η) distribution of charged particles (dN ch /dη) produced with |η|≤3.5 in proton-antiproton collisions at √s of 630 and 1800 GeV. We measure dN ch /dη at η=0 to be 3.18±0.06(stat)±0.10(syst) at 630 GeV, and 3.95±0.03(stat)±0.13(syst) at 1800 GeV. Many systematic errors in the ratio of dN ch /dη at the two energies cancel, and we measure 1.26±0.01±0.04 for the ratio of dN ch /dη at 1800 GeV to that at 630 GeV within |η|≤3. Comparing to lower-energy data, we observe an increase faster than ln(s) in dN ch /dη at η=0

GeV Observations of star-forming glaxies with the FERMI Large Area Telescope

Energy Technology Data Exchange (ETDEWEB)

Ackermann, M.; /DESY, Zeuthen; Ajello, M.; Allafort, A.; /SLAC /KIPAC, Menlo Park; Baldini, L.; /INFN, Pisa; Ballet, J.; /AIM, Saclay; Bastieri, D.; /INFN, Padua /Padua U.; Bechtol, K.; /SLAC /KIPAC, Menlo Park; Bellazzini, R.; /INFN, Pisa; Berenji, B.; Bloom, E.D.; /SLAC /KIPAC, Menlo Park; Bonamente, E.; /INFN, Perugia /Perugia U.; Borgland, A.W.; /SLAC /KIPAC, Menlo Park; Bouvier, A.; /UC, Santa Cruz; Bregeon, J.; /INFN, Pisa; Brigida, M.; /Bari Polytechnic /INFN, Bari; Bruel, P.; /Ecole Polytechnique; Buehler, R.; /SLAC /KIPAC, Menlo Park; Buson, S.; /INFN, Padua /Padua U.; Caliandro, G.A.; /CSIC, Catalunya; Cameron, R.A.; /SLAC /KIPAC, Menlo Park; Caraveo, P.A.; /Brera Observ. /AIM, Saclay /INFN, Perugia /Perugia U. /SLAC /KIPAC, Menlo Park /George Mason U. /Artep Inc. /Natl. Res. Coun., Wash., D.C. /Artep Inc. /SLAC /KIPAC, Menlo Park /Buenos Aires, IAFE /NASA, Goddard /Perugia U. /ASDC, Frascati /SLAC /KIPAC, Menlo Park /Montpellier U. /Stockholm U. /Stockholm U., OKC /Royal Swedish Acad. Sci. /ASDC, Frascati /Bari Polytechnic /INFN, Bari /Naval Research Lab, Wash., D.C. /SLAC /KIPAC, Menlo Park /Bari Polytechnic /INFN, Bari /Ecole Polytechnique /Hiroshima U. /SLAC /KIPAC, Menlo Park /Bari Polytechnic /INFN, Bari /INFN, Bari /ASDC, Frascati /INFN, Perugia /Perugia U. /Bari Polytechnic /INFN, Bari /SLAC /KIPAC, Menlo Park /AIM, Saclay /Alabama U., Huntsville /INFN, Padua /CSIC, Catalunya /SLAC /KIPAC, Menlo Park /Kyoto U. /NASA, Goddard /Ohio State U., CCAPP /Iceland U.; /more authors..

2012-08-07

Recent detections of the starburst galaxies M82 and NGC 253 by gamma-ray telescopes suggest that galaxies rapidly forming massive stars are more luminous at gamma-ray energies compared to their quiescent relatives. Building upon those results, we examine a sample of 69 dwarf, spiral, and luminous and ultraluminous infrared galaxies at photon energies 0.1-100 GeV using 3 years of data collected by the Large Area Telescope (LAT) on the Fermi Gamma-ray Space Telescope (Fermi). Measured fluxes from significantly detected sources and flux upper limits for the remaining galaxies are used to explore the physics of cosmic rays in galaxies. We find further evidence for quasi-linear scaling relations between gamma-ray luminosity and both radio continuum luminosity and total infrared luminosity which apply both to quiescent galaxies of the Local Group and low-redshift starburst galaxies (conservative P-values lesssim 0.05 accounting for statistical and systematic uncertainties). The normalizations of these scaling relations correspond to luminosity ratios of log (L 0.1-100 GeV/L 1.4 GHz) = 1.7 ± 0.1(statistical) ± 0.2(dispersion) and log (L 0.1-100 GeV/L 8-1000 μm) = –4.3 ± 0.1(statistical) ± 0.2(dispersion) for a galaxy with a star formation rate of 1 M ⊙ yr–1, assuming a Chabrier initial mass function. Using the relationship between infrared luminosity and gamma-ray luminosity, the collective intensity of unresolved star-forming galaxies at redshifts 0 < z < 2.5 above 0.1 GeV is estimated to be 0.4-2.4 × 10–6 ph cm–2 s–1 sr–1 (4%-23% of the intensity of the isotropic diffuse component measured with the LAT). We anticipate that ~10 galaxies could be detected by their cosmic-ray-induced gamma-ray emission during a 10 year Fermi mission.

Solid state synthesis of Mn{sub 5}Ge{sub 3} in Ge/Ag/Mn trilayers: Structural and magnetic studies

Energy Technology Data Exchange (ETDEWEB)

Myagkov, V.G.; Bykova, L.E.; Matsynin, A.A.; Volochaev, M.N.; Zhigalov, V.S.; Tambasov, I.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Mikhlin, Yu L. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation); Velikanov, D.A. [Kirensky Institute of Physics, SB RAS, Krasnoyarsk 660036 (Russian Federation); Bondarenko, G.N. [Institute of Chemistry and Chemical Technology, SB RAS, Krasnoyarsk 660049 (Russian Federation)

2017-02-15

The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2 µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500 °C at 50 °C intervals for 1 h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120 °C and increased slightly up to ~ 250 °C when the Ag barrier layer thickness increased up to 2.2 µm. In spite of the Ag layer, only the ferromagnetic Mn{sub 5}Ge{sub 3} compound and the Nowotny phase were observed in the initial stage of the reaction after annealing at 500 °C. The cross-sectional studies show that during Mn{sub 5}Ge{sub 3} formation the Ge is the sole diffusing species. The magnetic and cross-sectional transmission electron microscopy (TEM) studies show an almost complete transfer of Ge atoms from the Ge film, via a 2.2 µm Ag barrier layer, into the Mn layer. We attribute the driving force of the long-range transfer to the long-range chemical interactions between reacting Mn and Ge atoms. - Graphical abstract: The direct visualization of the solid state reaction between Mn and Ge across a Ag buffer layer at 500 °C. - Highlights: • The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. • The first Mn{sub 5}Ge{sub 3} phase was observed in reactions with different Ag layers. • The Ge is the sole diffusing species during Mn{sub 5}Ge{sub 3} formation • The long-range chemical interactions control the Ge atomic transfer.

Coarsening of Ni–Ge solid-solution precipitates in “inverse” Ni3Ge alloys

International Nuclear Information System (INIS)

Ardell, Alan J.; Ma Yong

2012-01-01

Highlights: ► We report microstructural evolution of disordered Ni–Ge precipitates in Ni 3 Ge alloys. ► Coarsening kinetics and particle size distributions are presented. ► Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. ► The shapes of large precipitates are unusual, with discus or boomerang cross-sections. ► Results are compared with morphology, kinetics of Ni–Al in inverse Ni 3 Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni–Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni 3 Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 °C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni 3 Ge precipitates in normal Ni–Ge alloys and of Ni–Al precipitates in inverse Ni 3 Al alloys. The activation energy for coarsening, 275.86 ± 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni 3 Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

Oxidative modifications, mitochondrial dysfunction, and impaired protein degradation in Parkinson's disease: how neurons are lost in the Bermuda triangle

Directory of Open Access Journals (Sweden)

Malkus Kristen A

2009-06-01

Full Text Available Abstract While numerous hypotheses have been proposed to explain the molecular mechanisms underlying the pathogenesis of neurodegenerative diseases, the theory of oxidative stress has received considerable support. Although many correlations have been established and encouraging evidence has been obtained, conclusive proof of causation for the oxidative stress hypothesis is lacking and potential cures have not emerged. Therefore it is likely that other factors, possibly in coordination with oxidative stress, contribute to neuron death. Using Parkinson's disease (PD as the paradigm, this review explores the hypothesis that oxidative modifications, mitochondrial functional disruption, and impairment of protein degradation constitute three interrelated molecular pathways that execute neuron death. These intertwined events are the consequence of environmental exposure, genetic factors, and endogenous risks and constitute a "Bermuda triangle" that may be considered the underlying cause of neurodegenerative pathogenesis.

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Science.gov (United States)

Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

2017-11-01

Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

Charged antiparticle to particle ratios near midrapidity in p+p collisions at √(sNN)=200GeV

Science.gov (United States)

Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Becker, B.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Harrington, A. S.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lee, J. W.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Sarin, P.; Sedykh, I.; Skulski, W.; Smith, C. E.; Steinberg, P.; Stephans, G. S.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; Nieuwenhuizen, G. J.; Verdier, R.; Veres, G. I.; Wolfs, F. L.; Wosiek, B.; Woźniak, K.; Wysłouch, B.; Zhang, J.

2005-02-01

The ratios of the yields of primary charged antiparticles to particles have been obtained for pions, kaons, and protons near midrapidity for p+p collisions at √(sNN)=200GeV. Ratios of =1.000±0.012 (stat.) ±0.019 (syst.), =0.93±0.05 (stat.) ±0.03 (syst.), and =0.85±0.04 (stat.) ±0.03 (syst.) have been measured. The reported values represent the ratio of the yields averaged over the rapidity range of 0.10.1GeV/c and 0.3GeV/c. Within the uncertainties, all three ratios are consistent with the values measured in d+Au collisions at the same energy. The data are compared to results from other collision systems and energies.

Deeply virtual compton scattering at 6 GeV

International Nuclear Information System (INIS)

Berthot, J.; Chen, J.P.; Chudakov, E.

2000-01-01

We propose a measurement of the Deep Virtual Compton Scattering process (DVCS) ep → epγ in Hall A at Jefferson Lab with a 6 GeV beam. We are able to explore the onset of Q 2 scaling, by measuring a beam helicity asymmetry for Q 2 ranging from 1.5 to 2.5 GeV 2 at x B ∼0.35. At this kinematics, the asymmetry is dominated by the DVCS - Bethe-Heitler (BH) interference, which is proportional to the imaginary part of the DVCS amplitude amplified by the full magnitude of the BH amplitude. The imaginary part of the DVCS amplitude is expected to scale early. Indeed, the imaginary part of the forward Compton amplitude measured in deep inelastic scattering (via the optical theorem) scales at Q 2 as low as 1 GeV 2 . If the scaling regime is reached, we will make an 8% measurement of the skewed parton distributions (SPD) contributing to the DVCS amplitude. Also, this experiment allows us to separately estimate the size of the higher-twist effects, since they are only suppressed by an additional factor 1/Q compared to the leading-twist term, and have a different angular dependence. We use a polarized electron beam and detect the scattered electron in the HRSe, the real photon in an electromagnetic calorimeter (under construction) and the recoil proton in a shielded scintillator array (to be constructed). This allows as to determine the difference in cross-sections for electrons of opposite helicities. This observable is directly linked to the SPD's. We estimate that 25 days of beam (600 hours) are needed to achieve this goal. (authors)

Reduction of 68Ge activity containing liquid waste from 68Ga PET chemistry in nuclear medicine and radiopharmacy by solidification

NARCIS (Netherlands)

E. de Blois (Erik); H.S. Chan (Ho Sze); K. Roy (Kamalika); E.P. Krenning (Eric); W.A.P. Breeman (Wouter)

2011-01-01

textabstractPET with68Ga from the TiO2- or SnO2- based68Ge/68Ga generators is of increasing interest for PET imaging in nuclear medicine. In general, radionuclidic purity (68Ge vs.68Ga activity) of the eluate of these generators varies between 0.01 and 0.001%. Liquid waste containing low amounts

Ab-initio calculations of semiconductor MgGeP{sub 2} and MgGeAs{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Kocak, B.; Ciftci, Y.O., E-mail: yasemin@gazi.edu.tr

2016-05-15

Highlights: • MgGeP{sub 2} and MgGeAs{sub 2} are semiconductor compounds. • MgGeP{sub 2} and MgGeAs{sub 2} are energetically, mechanically and dynamically stable. • The electronic charge density contour plot shows that the nature of bonding is a mixture of ionic-covalent. - Abstract: In this study, we focus on structural, electronic, elastic, lattice dynamic and optic properties of MgGeP{sub 2} and MgGeAs{sub 2} using ab-initio density-functional theory (DFT) within Armiento-Mattson 2005 (AM05) scheme of the generalized gradient approximation (GGA) for the exchange-correlation potential. Our computed structural results are in reasonable agreement with the literature. The band gap of these compounds is predicted to be direct. Our elastic results prove that these compounds are mechanically stable. The obtained phonon spectra of MgGeP{sub 2} and MgGeAs{sub 2} do not exhibit any significant imaginary branches using GGA-AM05 for the exchange-correlation approximation. Further analysis of the optical response of the dielectric functions, optical reflectivity, refractive index, extinction coefficient and electron energy loss delves into for the energy range of 0–22.5 eV. It motivated that there exists an optical polarization anisotropy of these compounds for optoelectronic device applications.

Investigation of electrochemical reduction of GeO2 to Ge in molten CaCl2-NaCl

International Nuclear Information System (INIS)

Rong, Liangbin; He, Rui; Wang, Zhiyong; Peng, Junjun; Jin, Xianbo; Chen, George Z.

2014-01-01

Electrochemical reduction of solid GeO 2 has been investigated in the mixed CaCl 2 -NaCl melt at 1023 K for developing a more efficient process for preparation of Ge. Cyclic voltammetry and potentiostatic electrolysis were applied to study the GeO 2 -loaded metallic cavity electrode. In addition, porous GeO 2 pellets were reduced by potentiostatic and constant cell voltage electrolysis with a graphite anode, and the electrolysis products were analyzed by powder X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectrometry, focusing on understanding the reduction mechanism and the impact of electrode potential on the product purity. It was found that the reduction of GeO 2 to Ge occurred at a potential of about -0.50 V (vs. Ag/Ag + ), but generating various calcium germanates simultaneously, whose reduction was a little more difficult and needed a potential more negative than -1.00 V. However, if the cathode potential exceeded -1.60 V, Ca (or Na) - Ge intermetallic compounds might form. These results gave an appropriate potential range between -1.10 and -1.40 V for the production of pure germanium. Rapid electrolysis of GeO 2 to pure Ge has been realized at a cell voltage of 2.5 V with a current efficiency of about 92%

The coarsening process of Ge precipitates in an Al-4 wt.% Ge alloy

Energy Technology Data Exchange (ETDEWEB)

Deaf, G.H

2004-05-01

In this paper the results of a quantitative transmission electron microscopy (TEM) investigation of the precipitation process of Ge in an Al-4 wt.% Ge alloy are described. Two crystallographic orientation relationships between the irregular germanium precipitate and aluminum matrix were found to be [1 0 0]{sub Ge} || [1 1 0]{sub Al} and [1 1 4]{sub Ge} || [1 0 0]{sub Al}. The irregular germanium precipitates formed on [0 0 1]{sub Al} habit planes. The origin of the irregular shape is due to the existence of a highly anisotropic interfacial energy as well as in an isotropic growth rate along <1 1 0>{sub A1} directions. Particles sizes were determined for variety of isothermal ageing times at 348, 423 and 523 K. The coarsening of the different morphologies of Ge precipitates was found to obey Ostwald ripening kinetics. The TEM results showed that the coarsening of irregular particles was due to the interfacial coalescence between these particles. Nine different morphologies have been distinguished in the form of (i) irregular particles, (ii) spheres, (iii) hexagonal plates, (iv) rods, (v) triangular plates, (vi) laths, (vii) small tetrahedra, (viii) rectangular plates, and (ix) Lamellae shape.

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(1 1 1)/GeO{sub 2} interface after capping with Al{sub 2}O{sub 3} layer

Energy Technology Data Exchange (ETDEWEB)

Paleari, S., E-mail: s.paleari6@campus.unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Molle, A. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Accetta, F. [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Lamperti, A.; Cianci, E. [Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy); Fanciulli, M., E-mail: marco.fanciulli@unimib.it [Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, via Cozzi 53, I-20125 Milan (Italy); Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, I-20864 Agrate Brianza, MB (Italy)

2014-02-01

The electrical activity of Ge dangling bonds is investigated at the interface between GeO{sub 2}-passivated Ge(1 1 1) substrate and Al{sub 2}O{sub 3} grown by atomic layer deposition, by means of electrically detected magnetic resonance spectroscopy (EDMR). The Al{sub 2}O{sub 3}/GeO{sub 2}/Ge stacked structure is promising as a mobility booster for the post-Si future electronic devices. EDMR proved to be useful in characterizing interface defects, even at the very low concentrations of state-of-the-art devices (<10{sup 10} cm{sup −2}). In particular, it is shown that capping the GeO{sub 2}-passivated Ge(1 1 1) with Al{sub 2}O{sub 3} has no impact on the microstructure of the Ge dangling bond.

Testing the QGSJET01 and QGSJETII-04 models with the help of atmospheric muons

Science.gov (United States)

Dedenko, Leonid G.; Lukyashin, Anton V.; Roganova, Tatiana M.; Fedorova, Galina F.

2017-06-01

More accurate original calculations of the atmospheric vertical muon energy spectra at energies 102 - 105 GeV have been carried out in terms of the QGSJET01 and QGSJETII-04 models. The Gaisser-Honda approximations of the measured energy spectra of primary protons, helium and nitrogen nuclei have been used. The CORSIKA package has been used to simulate cascades in the standard atmosphere induced by different primary particles with various fixed energies E. Statistics of simulated cascades for secondary particles with energies (0.01 - 1) · E was increased up to 106. It has been shown that predictions of the QGSJET01 and QGSJETII-04 models for these muon fluxes are below the data of the classical experiments L3 + Cosmic, MACRO and LVD by factors of ˜ 1.7-2 at energies above 102 GeV. It has been concluded that these tested models underestimate the production of the most energetic secondary particles, namely, π-mesons and K-mesons, in interactions of primary protons and other primary nuclei with nuclei in the atmosphere by the same factors.

Precision Measurement of the proton neutral weak form factors at Q² ~ 0.1 GeV²

Energy Technology Data Exchange (ETDEWEB)

Kaufman, Lisa J. [Univ. of Massachusetts, Amherst, MA (United States)

2007-02-01

This thesis reports the HAPPEX measurement of the parity-violating asymmetry for longitudinally polarized electrons elastically scattered from protons in a liquid hydrogen target. The measurement was carried out in Hall A at Thomas Jefferson National Accelerator Facility using a beam energy E = 3 GeV and scattering angle <θ{sub lab}> = 6°. The asymmetry is sensitive to the weak neutral form factors from which we extract the strange quark electric and magnetic form factors (G$s\\atop{E}$ and G$s\\atop{M}$) of the proton. The measurement was conducted during two data-taking periods in 2004 and 2005. This thesis describes the methods for controlling the helicity-correlated beam asymmetries and the analysis of the raw asymmetry. The parity-violating asymmetry has been measured to be A_PV = -1.14± 0.24 (stat)±0.06 (syst) ppm at 2> = 0.099 GeV² (2004), and A_PV = -1.58±0.12 (stat)±0.04 (syst) ppm at 2> = 0.109 GeV² (2005). The strange quark form factors extracted from the asymmetry are G$s\\atop{E}$ + 0.080G$s\\atop{M}$ = 0.030 ± 0.025 (stat) ± 0.006 (syst) ± 0.012 (FF) (2004) and G$s\\atop{E}$ +0.088G$s\\atop{M}$ = 0.007±0.011 (stat)±0.004 (syst)±0.005 (FF) (2005). These results place the most precise constraints on the strange quark form factors and indicate little strange dynamics in the proton.

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

International Nuclear Information System (INIS)

Zhang, Rui; Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi

2013-01-01

The ultrathin GeO x /Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al 2 O 3 /Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO x layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of ∼0.3 nm with an increase in the GeO x thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of ∼0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO x /Ge interfaces on Ge (100) and (111) surfaces.

Rational design of monocrystalline (InP)(y)Ge(5-2y)/Ge/Si(100) semiconductors: synthesis and optical properties.

Science.gov (United States)

Sims, Patrick E; Chizmeshya, Andrew V G; Jiang, Liying; Beeler, Richard T; Poweleit, Christian D; Gallagher, James; Smith, David J; Menéndez, José; Kouvetakis, John

2013-08-21

In this work, we extend our strategy previously developed to synthesize functional, crystalline Si(5-2y)(AlX)y {X = N,P,As} semiconductors to a new class of Ge-III-V hybrid compounds, leading to the creation of (InP)(y)Ge(5-2y) analogues. The compounds are grown directly on Ge-buffered Si(100) substrates using gas source MBE by tuning the interaction between Ge-based P(GeH3)3 precursors and In atoms to yield nanoscale "In-P-Ge3" building blocks, which then confer their molecular structure and composition to form the target solids via complete elimination of H2. The collateral production of reactive germylene (GeH2), via partial decomposition of P(GeH3)3, is achieved by simple adjustment of the deposition conditions, leading to controlled Ge enrichment of the solid product relative to the stoichiometric InPGe3 composition. High resolution XRD, XTEM, EDX, and RBS indicate that the resultant monocrystalline (InP)(y)Ge(5-2y) alloys with y = 0.3-0.7 are tetragonally strained and fully coherent with the substrate and possess a cubic diamond-like structure. Molecular and solid-state ab initio density functional theory (DFT) simulations support the viability of "In-P-Ge3" building-block assembly of the proposed crystal structures, which consist of a Ge parent crystal in which the P atoms form a third-nearest-neighbor sublattice and "In-P" dimers are oriented to exclude energetically unfavorable In-In bonding. The observed InP concentration dependence of the lattice constant is closely reproduced by DFT simulation of these model structures. Raman spectroscopy and ellipsometry are also consistent with the "In-P-Ge3" building-block interpretation of the crystal structure, while the observation of photoluminescence suggests that (InP)(y)Ge(5-2y) may have important optoelectronic applications.

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

Directory of Open Access Journals (Sweden)

Bo Zhang

2014-01-01

Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

DEFF Research Database (Denmark)

Vincent, B.; Gencarelli, F.; Bender, H.

2011-01-01

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

International Nuclear Information System (INIS)

Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

2011-01-01

Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films

International Nuclear Information System (INIS)

RodrIguez, A; Ortiz, M I; Sangrador, J; RodrIguez, T; Avella, M; Prieto, A C; Torres, A; Jimenez, J; Kling, A; Ballesteros, C

2007-01-01

The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

International Nuclear Information System (INIS)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

2012-01-01

We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

Calculation of the dose distribution in water from {sup 71}Ge K-shell x-rays

Energy Technology Data Exchange (ETDEWEB)

Cho, Sang H.; Reece, Warren D.; Poston, John W. Sr. [Department of Nuclear Engineering, Texas A and M University, College Station, TX (United States)

1997-06-01

The dose distribution in water from {sup 71}Ge K-shell x-rays (E{sub ave}=9.44 eV) was calculated for various source configurations using both analytic and GS4 Monte Carlo calculations. The point source kernel and the buildup factor are presented. The buildup factor for a point source in water has been found to increase up to about 1.1 as radial distance approaches 1 cm. Comparison between {sup 71}Ge and {sup 90}Sr/Y shows a similarity between their relative dose distribution in water. The dose distribution from a disc source was calculated using the EGS4 code and compared with the results from analytic calculation. Excellent agreement was observed, confirming the validity of analytic calculations. The dose rate at 0.01 cm from a {sup 71}Ge disc source was calculated to be about 1.3x10{sup -5} Gy MBq{sup -1}s{sup -1}. Based on the results from his study, {sup 71}Ge activity of the order of 3.7x10{sup 10} Bq({approx}1 Ci) might be necessary to obtain dose rates typical of {sup 90}Sr/Y ophthalmic applicators. The possibility of using {sup 71}Ge as a source of radioactive stents was also investigated. A {sup 71}Ge stent was modelled as a cylindrical shell source and the dose rates were determined by Monte Carlo calculations. Some calculated results are compared with published values for a {sup 32}P-coated stent. The dose rate at 0.01 cm from a {sup 71}Ge stent has been calculated to be about .5x10{sup -3} Gy MBq{sup -1}h{sup -1}, which is much lower than the reported dose rate at the same distance from a {sup 32}P-coated stent. However, an initial source activity of the order of 3.7x10{sup 7} Bq ({approx}1 mCi) would easily result in a typical target dose ({approx}24 Gy) needed for intravascular stent applications. In conclusion, {sup 71}Ge sources could be used as alternatives to beta sources and, unlike high-energy ({approx}MeV) beta sources, may provide easily predictable dose distributions in heterogeneous media and low dose rates, which might be beneficial for

Materials and devices for quantum information processing in Si/SiGe

Energy Technology Data Exchange (ETDEWEB)

Sailer, Juergen

2010-12-15

In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

The behavior of the Tevatron at energies greater than 1000 GeV

International Nuclear Information System (INIS)

Pogorelko, O.

1991-04-01

If, as appears likely, the top quark lies at the upper range of the mass reach of the Tevatron, then increasing the energy of the collider operation could prove to be a crucial factor in the future program together with projected luminosity enhancements. While a significant amount of data exists on individual magnets up to an energy of 1000 GeV, there are no detailed measurements above this value. We focus on the operating range beyond 1000 GeV in an attempt to see whether there is any realistic opportunity to extend the energy range of the Tevatron into this regime. The proposed modifications to the Tevatron Cryogenic System will provide sufficient cooling to lower the operating temperature of the 1000 superconducting magnets from the present 4.6--4.8K (1-φ inlet temperature) down to a range of 3.6--3.8K. At this temperature the short sample quench current for the dipole magnets should increase from the present value of ∼4000A (900 GeV) up to a level approaching 4800A (1100 GeV.) Increasing the peak current in the dipoles produces some important questions related to possible mechanical effects including catastrophic failure, the change of magnetic field quality, and quench protection problems resulting from the increased stored energy. In this note we shall examine these effects and comment on the existing data on low temperature operation. We have only considered the dipole magnets since the quadrupoles should not limit performance. We have not looked at the interaction region magnets which involve different considerations

The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

Science.gov (United States)

Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

2018-03-01

The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

GeO{sub x} interfacial layer scavenging remotely induced by metal electrode in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Taehoon; Jung, Yong Chan; Seong, Sejong; Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Lee, Sung Bo [Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 08826 (Korea, Republic of); Park, In-Sung, E-mail: parkis77@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 04763 (Korea, Republic of); Institute of Nano Science and Technology, Hanyang University, Seoul 04763 (Korea, Republic of)

2016-07-11

The metal gate electrodes of Ni, W, and Pt have been investigated for their scavenging effect: a reduction of the GeO{sub x} interfacial layer (IL) between HfO{sub 2} dielectric and Ge substrate in metal/HfO{sub 2}/GeO{sub x}/Ge capacitors. All the capacitors were fabricated using the same process except for the material used in the metal electrodes. Capacitance-voltage measurements, scanning transmission electron microscopy, and electron energy loss spectroscopy were conducted to confirm the scavenging of GeO{sub x} IL. Interestingly, these metals are observed to remotely scavenge the interfacial layer, reducing its thickness in the order of Ni, W, and then Pt. The capacitance equivalent thickness of these capacitors with Ni, W, and Pt electrodes are evaluated to be 2.7 nm, 3.0 nm, and 3.5 nm, and each final remnant physical thickness of GeO{sub x} IL layer is 1.1 nm 1.4 nm, and 1.9 nm, respectively. It is suggested that the scavenging effect induced by the metal electrodes is related to the concentration of oxygen vacancies generated by oxidation reaction at the metal/HfO{sub 2} interface.

Improving the electrode performance of Ge through Ge@C core-shell nanoparticles and graphene networks.

Science.gov (United States)

Xue, Ding-Jiang; Xin, Sen; Yan, Yang; Jiang, Ke-Cheng; Yin, Ya-Xia; Guo, Yu-Guo; Wan, Li-Jun

2012-02-08

Germanium is a promising high-capacity anode material for lithium ion batteries, but it usually exhibits poor cycling stability because of its huge volume variation during the lithium uptake and release process. A double protection strategy to improve the electrode performance of Ge through the use of Ge@C core-shell nanostructures and reduced graphene oxide (RGO) networks has been developed. The as-synthesized Ge@C/RGO nanocomposite showed excellent cycling performance and rate capability in comparison with Ge@C nanoparticles when used as an anode material for Li ion batteries, which can be attributed to the electronically conductive and elastic RGO networks in addition to the carbon shells and small particle sizes of Ge. The strategy is simple yet very effective, and because of its versatility, it may be extended to other high-capacity electrode materials with large volume variations and low electrical conductivities.

Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

International Nuclear Information System (INIS)

Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

2012-01-01

In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

Energy Technology Data Exchange (ETDEWEB)

De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

2016-04-07

We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

Forbidden energy band gap in diluted a-Ge{sub 1-x}Si{sub x}:N films

Energy Technology Data Exchange (ETDEWEB)

Guarneros, C.; Rebollo-Plata, B. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Lozada-Morales, R., E-mail: rlozada@fcfm.buap.mx [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Espinosa-Rosales, J.E. [Posgrado en Fisica Aplicada, Facultad de Ciencias Fisico-Matematicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Portillo-Moreno, J. [Facultad de Ciencias Quimicas, Benemerita Universidad Autonoma de Puebla, Blvd. 14 Sur 6301, Col. San Manuel, 72570, Puebla (Mexico); Zelaya-Angel, O. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del IPN, PO Box 14-740, Mexico 07360 D.F. (Mexico)

2012-06-01

By means of electron gun evaporation Ge{sub 1-x}Si{sub x}:N thin films, in the entire range 0 {<=} x {<=} 1, were prepared on Si (100) and glass substrates. The initial vacuum reached was 6.6 Multiplication-Sign 10{sup -4} Pa, then a pressure of 2.7 Multiplication-Sign 10{sup -2} Pa of high purity N{sub 2} was introduced into the chamber. The deposition time was 4 min. Crucible-substrate distance was 18 cm. X-ray diffraction patterns indicate that all the films were amorphous (a-Ge{sub 1-x}Si{sub x}:N). The nitrogen concentration was of the order of 1 at% for all the films. From optical absorption spectra data and by using the Tauc method the energy band gap (E{sub g}) was calculated. The Raman spectra only reveal the presence of Si-Si, Ge-Ge, and Si-Ge bonds. Nevertheless, infrared spectra demonstrate the existence of Si-N and Ge-N bonds. The forbidden energy band gap (E{sub g}) as a function of x in the entire range 0 {<=} x {<=} 1 shows two well defined regions: 0 {<=} x {<=} 0.67 and 0.67 {<=} x {<=} 1, due to two different behaviors of the band gap, where for x > 0.67 exists an abruptly change of E{sub g}(x). In this case E{sub g}(x) versus x is different to the variation of E{sub g} in a-Ge{sub 1-x}Si{sub x} and a-Ge{sub 1-x}Si{sub x}:H. This fact can be related to the formation of Ge{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} when x {<=} 0.67, and to the formation of Si{sub 3}N{sub 4} and GeSi{sub 2}N{sub 4} for 0.67 {<=} x. - Highlights: Black-Right-Pointing-Pointer Nitrogen doped amorphous Ge{sub 1-x}Si{sub x} thin films are grown by electron gun technique. Black-Right-Pointing-Pointer Nitrogen atoms on E{sub g} of the a-Ge{sub 1-x}Si{sub x} films in the 0 Pound-Sign x Pound-Sign 1 range are analyzed. Black-Right-Pointing-Pointer Variation in 0 Pound-Sign x Pound-Sign 1 range shows a warped change of E{sub g} in 1.0 - 3.6 eV range. Black-Right-Pointing-Pointer The change in E{sub g}(x) behavior when x {approx} 0.67 was associated with Ge{sub 2}SiN{sub 4

Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0 νββ decay searches of 76Ge

Science.gov (United States)

Bhike, Megha; Fallin, B.; Krishichayan; Tornow, W.

2015-02-01

The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ∼ 86%76Ge and ∼ 14%74Ge used in the 0 νββ searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the 3H (p , n)3He, 2H (d , n)3He and 3H (d , n)4He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution γ-ray spectroscopy was used to determine the γ-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the 74Ge (n , γ)75Ge reaction, the present data are about a factor of two larger than predicted. It was found that the 74Ge (n , γ)75Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the 76Ge (n , γ)77Ge yield due to the larger cross section of the former reaction.

Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors

International Nuclear Information System (INIS)

Moriyama, Yoshihiko; Kamimuta, Yuuichi; Ikeda, Keiji; Tezuka, Tsutomu

2012-01-01

Tensile strain of over 1% in Ge stripes sandwiched between a pair of SiGe source-drain stressors was demonstrated. The Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET)-like structures were fabricated on a (001)-Ge substrate having SiO 2 dummy-gate stripes with widths down to 26 nm. Recess-regions adjacent to the dummy-gate stripes were formed by an anisotropic wet etching technique. A damage-free and well-controlled anisotropic wet etching process is developed in order to avoid plasma-induced damage during a conventional Reactive-ion Etching process. The SiGe stressors were epitaxially grown on the recesses to simulate strained Ge n-channel Metal–Insulator–Semiconductor Field-Effect Transistors (MISFETs) having high electron mobility. A micro-Raman spectroscopy measurement revealed tensile strain in the narrow Ge regions which became higher for narrower regions. Tensile strain of up to 1.2% was evaluated from the measurement under an assumption of uniaxial strain configuration. These results strongly suggest that higher electron mobility than the upper limit for a Si-MOSFET is obtainable in short-channel strained Ge-nMISFETs with the embedded SiGe stressors.

D-meson production from 400 GeV/c pp interactions

International Nuclear Information System (INIS)

Aguilar-Benitez, M.; Colino, N.; Diez-Hedo, F.

1987-01-01

We have measured the inclusive production properties of D and anti D mesons produced from pp interations at √s = 27.4 GeV. The differential production cross section is well represented by the empirical form d 2 σdx F /dP T 2 = 1/2 [σ(D/anti D)(n+1) b](1-vertical strokex F vertical stroke) n exp(-bp T 2 ) with n = 4.9±0.5, b = (1.0±0.1) (GeV/c) -2 , and the inclusive D/anti D cross section σ(D/anti D) is (30.2±3.3) μb. The QCD fusion model predicts D/anti D production which is in good agreement with our data except for the magnitude of the cross section which depends sensitively on the assumed mass of the charm quark. (orig.)

Water type and irrigation time effects on microbial metabolism of a soil cultivated with Bermuda-grass Tifton 85

Directory of Open Access Journals (Sweden)

Sandra Furlan Nogueira

2011-06-01

Full Text Available This study investigated the microbial metabolism in Bermuda-grass Tifton 85 areas after potable-water and effluent irrigation treatments. The experiment was carried out in Lins/SP with samples taken in the rainy and dry seasons (2006 after one year and three years of irrigation management, and set up on an entirely randomized block design with four treatments: C (control, without irrigation or fertilization, PW (potable water + 520 kg of N ha-1 year-1; TE3 and TE0 (treated effluent + 520 kg of N ha-1 year-1 for three years and one year, respectively. The parameters determined were: microbial biomass carbon, microbial activity, and metabolic quotient. Irrigation with wastewater after three years indicated no alteration in soil quality for C and ET3; for PW, a negative impact on soil quality (microbial biomass decrease suggested that water-potable irrigation in Lins is not an adequate option. Microbial activity alterations observed in TE0 characterize a priming effect.

Ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) – New representatives of the YIrGe{sub 2} type

Energy Technology Data Exchange (ETDEWEB)

Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer, E-mail: pottgen@uni-muenster.de

2016-11-15

The YIrGe{sub 2} type ternary germanides RERhGe{sub 2} (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe{sub 2} was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F{sup 2} values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe{sub 2}] polyanion is stabilized through covalent Rh–Ge (243–261 pm) and Ge–Ge (245–251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE{sub 5}Rh{sub 4}Ge{sub 10} (≡ RERh{sub 0.8}Ge{sub 2}) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe{sub 2} and Curie-Weiss paramagnetism for RERhGe{sub 2} with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at T{sub N} = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively. - Graphical abstract: The germanides RERhGe{sub 2} (RE = Y, Gd-Ho) are new representatives of the YIrGe{sub 2} type.

Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Gencarelli, F., E-mail: federica.gencarelli@imec.be [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium); Shimura, Y. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Kumar, A. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Vincent, B.; Moussa, A.; Vanhaeren, D.; Richard, O.; Bender, H. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, W. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Nuclear and Radiation Physics Section, KU Leuven, B-3001 Leuven (Belgium); Caymax, M.; Loo, R. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, M. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Dept. of Metallurgy and Materials Engineering, KU Leuven, B-3001 Leuven (Belgium)

2015-09-01

In this work, we discuss the characteristics of particular island-type features with an amorphous core that are developed during the low temperature epitaxial growth of Ge and GeSn layers by means of chemical vapor deposition with Ge{sub 2}H{sub 6}. Although further investigations are needed to unambiguously identify the origin of these features, we suggest that they are originated by the formation of clusters of H and/or contaminants atoms during growth. These would initially cause the formation of pits with crystalline rough facets over them, resulting in ring-shaped islands. Then, when an excess surface energy is overcome, an amorphous phase would nucleate inside the pits and fill them. Reducing the pressure and/or increasing the growth temperature can be effective ways to prevent the formation of these features, likely due to a reduction of the surface passivation from H and/or contaminant atoms. - Highlights: • Island features with amorphous cores develop during low T Ge(Sn) CVD with Ge{sub 2}H{sub 6.} • These features are thoroughly characterized in order to understand their origin. • A model is proposed to describe the possible evolution of these features. • Lower pressures and/or higher temperatures avoid the formation of these features.

Study on synthesis of {sup 68}GeO{sub 2} and behavior of {sup 68}Ga{sup 3+} Generator column

Energy Technology Data Exchange (ETDEWEB)

Kim, Gun Gyun; Lee, Jun Young; Hur, Min Gu; Yang, Srung Dae; Park, Jeong Hoon [Radiation Instrumentation Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon (Korea, Republic of); Kim, Sang Wook [Dept. of Advanced Materials Chemistry, Dongguk University, Gyeongju (Korea, Republic of)

2017-02-15

{sup 68}Ga has emerged as a promising candidate for non-invasive diagnostic imaging within Positron Emission Tomography (PET) because of its advantageous radiochemical characteristics (t{sub 1/2}= 68 min, β{sup +} yield ⁓89%). {sup 68}Ga forms a stable chelation with various ligands and it is possible to be quickly and easily study using a {sup 68}Ge/{sup 68}Ga generator. Commercial {sup 68}Ge/{sup 68}Ga generators are chromatographic system using the inorganic materials such as alumina and tin dioxide which are employed as column matrixes for {sup 68}Ge. In this study, we tried out to make {sup 68}Ge/{sup 68}Ga generator system with the {sup 68}GeO{sub 2} microstructures for column matrix. {sup 68}Ge tends to have stable bond with oxide as {sup 68}GeO{sub 2} microstructures. The {sup 68}GeO{sub 2} has been synthesized by hydrolysis of GeCl{sub 4} (sol-gel method) and characterized by X-ray diffraction and scanning electron microscope for geometrical analysis. The stability of GeO{sub 2} was tested using eluent with diverse solvents (water, ethanol and 0.1 N HCl). The radioactivity of {sup 68}Ga{sup 3+} in eluate through GeO{sub 2} was measured to prove a function as column material for a generation eluate through GeO{sub 2} was measured to prove a function as column material for a generator.

Tailoring the spin polarization in Ge/SiGe multiple quantum wells

International Nuclear Information System (INIS)

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario; Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni; Trivedi, Dhara; Song, Yang; Li, Pengki; Dery, Hanan

2013-01-01

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization

Analysis of background components in Ge-spectrometry and their influence on detection limits

Energy Technology Data Exchange (ETDEWEB)

Heusser, G [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany)

1997-03-01

In low radioactivity measurements the system own background of the spectrometer is, besides the counting efficiency, the limiting factor for the achievable sensitivity. Since the latter is mostly fixed, background reduction is the only way to gain sensitivity, although it is inversely proportional only to the square root of the background rate but directly proportional to the counting efficiency. A thorough understanding of the background sources and their quantitative contribution helps to choose the most adequate suppression method in order to reach a certain required level of detection limit. For Ge-spectrometry the background can be reduced by 5 to 6 orders of magnitude compared to the unshielded case applying state-of-the-art techniques. This reduction factor holds for the continuous background spectrum as well as for the line background as demonstrated for a Ge detector of the Heidelberg-Moscow double beta decay experiment. (orig./DG)

Theoretical scenarios for 103 GeV to 1019 GeV

International Nuclear Information System (INIS)

Kaul, R.K.

1996-01-01

Basic dogmas of particle physics are reviewed. Some of their implications beyond the standard model are explored. Higgs sector of the standard model of electroweak interactions is the weakest link in the model. Elementary Higgs field makes the model unnatural beyond about 10 3 GeV. Supersymmetry provides the most attractive framework where in this problem can be addressed. This new symmetry, relating fermions and bosons, is expected to be operative at about 10 3 GeV. In addition, grand unification of the fundamental interactions can be studied consistently only within a supersymmetric formulation. Inclusion of gravity with other interactions leads to supergravity theories, which should emerge as a low energy description of a more fundamental theory, the string-theory. Supersymmetry again is an essential feature of such a theory. Quantum gravity, with its characteristic scale of 10 19 GeV, may well be described by a superstring theory. (author). 28 refs., 1 fig

Spin Transfer in Inclusive Λ0 Production by Transversely Polarized Protons at 200GeV/c

International Nuclear Information System (INIS)

Grosnick, D.P.; Hill, D.A.; Laghai, M.; Lopiano, D.; Ohashi, Y.; Spinka, H.; Stanek, R.W.; Underwood, D.G.; Yokosawa, A.; Bystricky, J.; Lehar, F.; Lesquen, A. de; Rossum, L. van; Cossairt, J.D.; Read, A.L.; Iwatani, K.; Belikov, N.I.; Derevschikov, A.A.; Grachov, O.A.; Matulenko, Y.A.; Meschanin, A.P.; Nurushev, S.B.; Patalakha, D.I.; Rykov, V.L.; Solovyanov, V.L.; Vasiliev, A.N.; Akchurin, N.; Onel, Y.; Maki, T.; Enyo, H.; Funahashi, H.; Goto, Y.; Iijima, T.; Imai, K.; Itow, Y.; Makino, S.; Masaike, A.; Miyake, K.; Nagamine, T.; Saito, N.; Yamashita, S.; Takashima, R.; Takeutchi, F.; Kuroda, K.; Michalowicz, A.; Rappazzo, G.F.; Salvato, G.; Luehring, F.C.; Miller, D.H.; Tamura, N.; Yoshida, T.; Adams, D.L.; Bonner, B.E.; Corcoran, M.D.; Cranshaw, J.; Nessi-Tedaldi, F.; Nessi, M.; Nguyen, C.; Roberts, J.B.; Skeens, J.; White, J.L.; Bravar, A.

1997-01-01

Surprisingly large polarizations in hyperon production by unpolarized protons have been known for a long time. The spin dynamics of the production process can be further investigated with polarized beams. Recently, a negative asymmetry A N was found in inclusive Λ 0 production with a 200GeV/c transversely polarized proton beam. The depolarization D NN in p↑+p→Λ 0 +X has been measured with the same beam over a wide x F range and at moderate p T . D NN reaches positive values of about 30% at high x F and p T ∼1.0GeV/c . This result shows a sizable spin transfer from the incident polarized proton to the outgoing Λ 0 . copyright 1997 The American Physical Society

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

Self organized formation of Ge nanocrystals in multilayers

OpenAIRE

Zschintzsch-Dias, Manuel

2012-01-01

The aim of this work is to create a process which allows the tailored growth of Ge nanocrystals for use in photovoltic applications. The multilayer systems used here provide a reliable method to control the Ge nanocrystal size after phase separation. In this thesis, the deposition of GeOx/SiO2 and Ge:SiOx~ 2/SiO2 multilayers via reactive dc magnetron sputtering and the self-ordered Ge nanocrystal formation within the GeOx and Ge:SiOx~ 2 sublayers during subsequent annealing is investigated...

Optimization of statistical methods for HpGe gamma-ray spectrometer used in wide count rate ranges

Energy Technology Data Exchange (ETDEWEB)

Gervino, G., E-mail: gervino@to.infn.it [UNITO - Università di Torino, Dipartimento di Fisica, Turin (Italy); INFN - Istituto Nazionale di Fisica Nucleare, Sez. Torino, Turin (Italy); Mana, G. [INRIM - Istituto Nazionale di Ricerca Metrologica, Turin (Italy); Palmisano, C. [UNITO - Università di Torino, Dipartimento di Fisica, Turin (Italy); INRIM - Istituto Nazionale di Ricerca Metrologica, Turin (Italy)

2016-07-11

The need to perform γ-ray measurements with HpGe detectors is a common technique in many fields such as nuclear physics, radiochemistry, nuclear medicine and neutron activation analysis. The use of HpGe detectors is chosen in situations where isotope identification is needed because of their excellent resolution. Our challenge is to obtain the “best” spectroscopy data possible in every measurement situation. “Best” is a combination of statistical (number of counts) and spectral quality (peak, width and position) over a wide range of counting rates. In this framework, we applied Bayesian methods and the Ellipsoidal Nested Sampling (a multidimensional integration technique) to study the most likely distribution for the shape of HpGe spectra. In treating these experiments, the prior information suggests to model the likelihood function with a product of Poisson distributions. We present the efforts that have been done in order to optimize the statistical methods to HpGe detector outputs with the aim to evaluate to a better order of precision the detector efficiency, the absolute measured activity and the spectra background. Reaching a more precise knowledge of statistical and systematic uncertainties for the measured physical observables is the final goal of this research project.

7 CFR 51.3204 - Fairly firm.

Science.gov (United States)

2010-01-01

... 7 Agriculture 2 2010-01-01 2010-01-01 false Fairly firm. 51.3204 Section 51.3204 Agriculture Regulations of the Department of Agriculture AGRICULTURAL MARKETING SERVICE (Standards, Inspections, Marketing... Standards for Grades of Bermuda-Granex-Grano Type Onions Definitions § 51.3204 Fairly firm. Fairly firm...

Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

International Nuclear Information System (INIS)

Facetti, J.F.; Vallejos, A.

1971-01-01

Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions

Electromigration techniques for Ge(II) and Ge(IV) separation in germanium thio compounds

Energy Technology Data Exchange (ETDEWEB)

Facetti, J F; Vallejos, A [Asuncion Naciona Univ. (Paraguay). Inst. de Ciencias

1971-01-01

Using H.V. electromigration techniques, a good separation of the Ge(II) and Ge(IV) was achieved. The procedure was carried out in alkaline medium. And the final position of the separated species was established by, either neutron activation of the papa strips or chromatic reactions.

High spin states in 66,68Ge

International Nuclear Information System (INIS)

Hermkens, U.; Becker, F.; Eberth, J.; Freund, S.; Mylaeus, T.; Skoda, S.; Teichert, W.; Werth, A. v.d.

1992-01-01

High spin states of 66,68 Ge have been investigated at the FN Tandem accelerator of the University of Koeln via the reactions 40 Ca( 32 S,α2p,4p) 66,68 Ge at a beam energy of 100 MeV and 58 Ni( 16 O,α2p) 68 Ge at 65 MeV. The OSIRIS spectrometer with 12 escape suppressed Ge detectors was used to measure γγ coincidences and γ-ray angular distributions. In 66 Ge ( 68 Ge) 33 (22) new levels were found and 63 (62) new γ-transitions were placed in the level scheme. Both nuclei show a rather complicated but similar excitation pattern, ruled by the interplay of quasiparticle and collective degrees of freedom. The results are compared to the recently published EXVAM calculations for 68 Ge. (orig.)

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

Science.gov (United States)

Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

2014-10-01

Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

DEFF Research Database (Denmark)

Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

2012-01-01

to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

Deeply virtual compton scattering at 6 GeV

Energy Technology Data Exchange (ETDEWEB)

Berthot, J. [Universite Blaise Pascal, Clermont-Ferrand II, Lab. de Physique Corpusculaire (CNRS), 63 - Aubiere (France); Chen, J.P.; Chudakov, E. [National Accelerator Facility, Newport News, Virginia (United States)] [and others

2000-07-01

We propose a measurement of the Deep Virtual Compton Scattering process (DVCS) ep {yields} ep{gamma} in Hall A at Jefferson Lab with a 6 GeV beam. We are able to explore the onset of Q{sup 2} scaling, by measuring a beam helicity asymmetry for Q{sup 2} ranging from 1.5 to 2.5 GeV{sup 2} at x{sub B}{approx}0.35. At this kinematics, the asymmetry is dominated by the DVCS - Bethe-Heitler (BH) interference, which is proportional to the imaginary part of the DVCS amplitude amplified by the full magnitude of the BH amplitude. The imaginary part of the DVCS amplitude is expected to scale early. Indeed, the imaginary part of the forward Compton amplitude measured in deep inelastic scattering (via the optical theorem) scales at Q{sup 2} as low as 1 GeV{sup 2}. If the scaling regime is reached, we will make an 8% measurement of the skewed parton distributions (SPD) contributing to the DVCS amplitude. Also, this experiment allows us to separately estimate the size of the higher-twist effects, since they are only suppressed by an additional factor 1/Q compared to the leading-twist term, and have a different angular dependence. We use a polarized electron beam and detect the scattered electron in the HRSe, the real photon in an electromagnetic calorimeter (under construction) and the recoil proton in a shielded scintillator array (to be constructed). This allows as to determine the difference in cross-sections for electrons of opposite helicities. This observable is directly linked to the SPD's. We estimate that 25 days of beam (600 hours) are needed to achieve this goal. (authors)

Klystron-modulator system availability of PLS 2 GeV electron linac

International Nuclear Information System (INIS)

Cho, M.H.; Park, S.S.; Oh, J.S.; Namkung, W.

1996-01-01

PLS Linac has been injecting 2 GeV electron beams to the Pohang Light Source (PLS) storage ring since September 1994. PLS 2 GeV linac employs 11 sets of high power klystron-modulator (K and M) system for the main RF source for the beam acceleration. The klystron has rated output peak power of 80 MW at 4 microsec pulse width and at 60 pps. The matching modulator has 200 MW peak output power. The total accumulated high voltage run time of the oldest unit has reached beyond 23,000 hour and the sum of all the high voltage run time is approximately 230,000 hour as of May 1996. In this paper, we review overall system performance of the high-power K and M system. A special attention is paid on the analysis of all failures and troubles of the K and M system which affected the linac high power RF operations as well as beam injection operations for the period of 1994 to May 1996. (author)

Effect of Ge surface termination on oxidation behavior

Science.gov (United States)

Lee, Younghwan; Park, Kibyung; Cho, Yong Soo; Lim, Sangwoo

2008-09-01

Sulfur-termination was formed on the Ge(1 0 0) surface using (NH 4) 2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH 4) 2S solution, H-termination on the Ge(1 0 0) surface was substituted with S-termination in 1 min. When the S-terminated Ge(1 0 0) surface was exposed in air ambient, the oxidation was retarded for about 3600 min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1 0 0) surface was about 120 times longer than for the H-terminated Ge(1 0 0) surface. However, the oxidation of S-terminated Ge(1 0 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH 4) 2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1 0 0) surface was independent of the concentration of the (NH 4) 2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1 0 0) surface, oxide growth is accelerated.

SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

Science.gov (United States)

Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

2017-08-01

In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

Science.gov (United States)

Aubin, J.; Hartmann, J. M.

2018-01-01

We have investigated the low temperature epitaxy of high Sn content GeSn alloys in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition tool from Applied Materials. Gaseous digermane (Ge2H6) and liquid tin tetrachloride (SnCl4) were used as the Ge and Sn precursors, respectively. The impact of temperature (in the 300-350 °C range), Ge2H6 and SnCl4 mass-flows on the GeSn growth kinetics at 100 Torr has been thoroughly explored. Be it at 300 °C or 325 °C, a linear GeSn growth rate increase together with a sub-linear Sn concentration increase occurred as the SnCl4 mass-flow increased, irrespective of the Ge2H6 mass flow (fixed or varying). The Sn atoms seemed to catalyze H desorption from the surface, resulting in higher GeSn growth rates for high SnCl4 mass-flows (in the 4-21 nm min-1 range). The evolution of the Sn content x with the F (SnCl4) 2 ·/F (Ge2H6) mass-flow ratio was fitted by x2/(1 - x) = n ·F (SnCl4) 2 ·/F (Ge2H6), with n = 0.25 (325 °C) and 0.60 (300 °C). We have otherwise studied the impact of temperature, in the 300-350 °C range, on the GeSn growth kinetics. The GeSn growth rate exponentially increased with the temperature, from 15 up to 32 nm min-1. The associated activation energy was low, i.e. Ea = 10 kcal mol-1. Meanwhile, the Sn content decreased linearly as the growth temperature increased, from 15% at 300 °C down to 6% at 350 °C.

Shallow acceptors in strained Ge/Ge1-xSix heterostructures with quantum wells

International Nuclear Information System (INIS)

Aleshkin, V.Ya.; Andreev, B.A.; Gavrilenko, V.I.; Erofeeva, I.V.; Kozlov, D.V.; Kuznetsov, O.A.

2000-01-01

Dependence of acceptor localized state energies in quantum wells (strained layers of Ge in heterostructures Ge/Ge 1-x Si x ) on the width of quantum well and position in it was studied theoretically. Spectrum of impurity absorption in the far infrared range was calculated. Comparison of the results calculated and observed photoconductivity spectra permits estimating acceptor distribution over quantum well and suggesting conclusion that acceptors can be largely concentrated near heteroboundaries. Absorption spectrum was calculated bearing in mind resonance impurity states, which permits explaining the observed specific features in the photoconductivity spectrum short-wave range by transition to resonance energy levels, bound to upper subzones of dimensional quantization [ru

Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

Science.gov (United States)

Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

Magnetic and electrical properties of epitaxial GeMn

Energy Technology Data Exchange (ETDEWEB)

Ahlers, Stefan

2009-01-15

In this work, GeMn magnetic semiconductors will be investigated. The fabrication of GeMn thin films with Mn contents up to 11.7% was realised with molecular beam epitaxy. At a fabrication temperature of 60 C, the suppression of Mn{sub x}Ge{sub y} phases could reproducibly be obtained. Dislocation free epitaxy of diamond-lattice type GeMn thin films was observed. In all fabrication conditions where Mn{sub x}Ge{sub y} suppression was feasible, an inhomogeneous dispersion of Mn was observed in form of a self-assembly of nanometre sized, Mn rich regions in a Ge rich matrix. Each Mn rich region exhibits ferromagnetic coupling with high Curie temperatures exceeding, in part, room temperature. The local ferromagnetic ordering leads to the formation of large, spatially separated magnetic moments, which induce a superparamagnetic behaviour of the GeMn thin films. At low temperatures {<=} 20 K, remanent behaviour was found to emerge. X-ray absorption experiments revealed a similarity of the Mn incorporation in diamond-lattice type GeMn thin films and in the hexagonal lattice of the intermetallic Mn{sub 5}Ge{sub 3} phase, respectively. These tetrahedra represent building blocks of the Mn{sub 5}Ge{sub 3} unit cell. The incorporation of Mn{sub 5}Ge{sub 3} building blocks was found to be accompanied by local structural disorder. The electrical properties of GeMn thin films were addressed by transport measurements. It was shown that by using a n-type Ge substrate, a pn energy barrier between epilayers and substrate to suppress parallel substrate conduction paths can be introduced. With the pn barrier concept, first results on the magnetotransport behaviour of GeMn thin films were obtained. GeMn was found to be p-type, but of high resistivity. a series of GeMn thin films was fabricated, where intermetallic Mn{sub x}Ge{sub y} phase separation was supported in a controlled manner. Phase separation was found to result in the formation of partially coherent, nanometre sized Mn{sub 5

Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

Energy Technology Data Exchange (ETDEWEB)

Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

2016-08-31

Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.

Interfacial processes in the Pd/a-Ge:H system

Science.gov (United States)

Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

1993-06-01

The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

Kinetics of plasma oxidation of germanium-tin (GeSn)

Science.gov (United States)

Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

2017-12-01

The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

First results for the two-spin parameter ALL in π0 production by 200 GeV polarized protons and antiprotons

International Nuclear Information System (INIS)

Adams, D.L.; Corcoran, M.D.; Cranshaw, J.; Nessi-Tedaldi, F.; Nessi, M.; Nguyen, C.; Roberts, J.B.; Skeens, J.; White, J.L.; Bystricky, J.; Chaumette, P.; Deregel, J.; Durand, G.; Fabre, J.; Lehar, F.; Lesquen, A. de; Cossairt, J.D.; Read, A.L.; En'yo, H.; Funahashi, H.; Goto, Y.; Imai, K.; Itow, Y.; Makino, S.; Masaike, A.; Miyake, K.; Nagamine, T.; Saito, N.; Yamashita, S.; Grosnick, D.P.; Hill, D.A.; Kasprzyk, T.; Laghai, M.; Lopiano, D.; Ohashi, Y.; Shepard, J.; Spinka, H.; Underwood, D.G.; Yokosawa, A.; Iwatani, K.; Krueger, K.W.; Kuroda, K.; Michalowicz, A.; Pauletta, G.; Penzo, A.; Schiavon, P.; Zanetti, A.; Salvato, G.; Villari, A.; Takeutchi, F.; Tamura, N.; Tanaka, N.; Yoshida, T.

1991-01-01

The two-spin parameter A LL in inclusive π 0 production by longitudinally-polarized protons and antiprotons on a longitudinally-polarized proton target has been measured at the 200 GeV Fermilab spin physics facility, for π 0 's at x F = 0 with 1 ≤ p t ≤ 3 GeV/c. The results exclude, at the 95% confidence level, values of A LL (pp) > 0.1 and 0 's produced by protons, and values of A LL (anti pp) > 0.1 and LL (pp) for the gluon spin density is discussed. The data are in good agreement with 'conventional' small or zero, gluon polarization. (orig.)

Electron Transport Properties of Ge nanowires

Science.gov (United States)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Mass-identified particle production in proton-antiproton collisions at √s =300, 540, 1000, and 1800 GeV

International Nuclear Information System (INIS)

Alexopoulos, T.; Allen, C.; Anderson, E.W.; Balamurali, V.; Banerjee, S.; Beery, P.D.; Bhat, P.; Bishop, J.M.; Biswas, N.N.; Bujak, A.; Carmony, D.D.; Carter, T.; Choi, Y.; Cole, P.; DeBonte, R.; DeCarlo, V.; Erwin, A.R.; Findeisen, C.; Goshaw, A.T.; Gutay, L.J.; Hirsch, A.S.; Hojvat, C.; Jennings, J.R.; Kenney, V.P.; Lindsey, C.S.; Loomis, C.; LoSecco, J.M.; McMahon, T.; McManus, A.P.; Morgan, N.; Nelson, K.; Oh, S.H.; Porile, N.T.; Reeves, D.; Rimai, A.; Robertson, W.J.; Scharenberg, R.P.; Stampke, S.R.; Stringfellow, B.C.; Thompson, M.; Turkot, F.; Walker, W.D.; Wang, C.H.; Warchol, J.; Wesson, D.K.; Zhan, Y.

1993-01-01

The yields and average transverse momenta of pions, kaons, and antiprotons produced at the Fermilab bar pp collider at √s =300, 540, 1000, and 1800 GeV are presented and compared with data from the energies reached at the CERN collider. We also present data on the dependence of average transverse momentum left-angle p t right-angle and particle ratios as a function of charged particle density dN c /dη; data for particle densities as high as six times the average value, corresponding to a Bjorken energy density 6 GeV/fm 3 , are reported. These data are relevant to the search for quark-gluon phase of QCD

Stellar Laboratories: New GeV and Ge VI Oscillator Strengths and their Validation in the Hot White Dwarf RE0503-289

Science.gov (United States)

Rauch, T.; Werner, K.; Biemont, E.; Quinet, P.; Kruk, J. W.

2013-01-01

State-of-the-art spectral analysis of hot stars by means of non-LTE model-atmosphere techniques has arrived at a high level of sophistication. The analysis of high-resolution and high-S/N spectra, however, is strongly restricted by the lack of reliable atomic data for highly ionized species from intermediate-mass metals to trans-iron elements. Especially data for the latter has only been sparsely calculated. Many of their lines are identified in spectra of extremely hot, hydrogen-deficient post-AGB stars. A reliable determination of their abundances establishes crucial constraints for AGB nucleosynthesis simulations and, thus, for stellar evolutionary theory. Aims. In a previous analysis of the UV spectrum of RE 0503-289, spectral lines of highly ionized Ga, Ge, As, Se, Kr, Mo, Sn, Te, I, and Xe were identified. Individual abundance determinations are hampered by the lack of reliable oscillator strengths. Most of these identified lines stem from Ge V. In addition, we identified Ge VI lines for the first time. We calculated Ge V and Ge VI oscillator strengths in order to reproduce the observed spectrum. Methods. We newly calculated Ge V and Ge VI oscillator strengths to consider their radiative and collisional bound-bound transitions in detail in our non-LTE stellar-atmosphere models for the analysis of the Ge IV-VI spectrum exhibited in high-resolution and high-S/N FUV (FUSE) and UV (ORFEUS/BEFS, IUE) observations of RE 0503-289. Results. In the UV spectrum of RE 0503-289, we identify four Ge IV, 37 Ge V, and seven Ge VI lines. Most of these lines are identified for the first time in any star. We can reproduce almost all Ge IV, GeV, and Ge VI lines in the observed spectrum of RE 0503-289 (T(sub eff) = 70 kK, log g = 7.5) at log Ge = -3.8 +/- 0.3 (mass fraction, about 650 times solar). The Ge IV/V/VI ionization equilibrium, that is a very sensitive T(sub eff) indicator, is reproduced well. Conclusions. Reliable measurements and calculations of atomic data are a

Structural, electronic and optical characteristics of SrGe{sub 2} and BaGe{sub 2}: A combined experimental and computational study

Energy Technology Data Exchange (ETDEWEB)

Kumar, Mukesh, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

2015-05-05

Highlights: • Charge transfer between cation and anion atoms observed first time in digermandies. • Study yields a band gap of ∼1 eV and ∼0.85 eV for SrGe{sub 2} and BaGe{sub 2}, respectively. • Band gap decrease with the application of hydrostatic pressure. • Localized cation d states lead to a large absorption coefficient (>7.5 × 10{sup 4} cm{sup −1}). - Abstract: SrGe{sub 2} and BaGe{sub 2} were characterized for structural, electronic and optical properties by means of diffuse reflectance and first-principles density functional theory. These two germanides crystallize in the BaSi{sub 2}-type structure, in which Ge atoms are arranged in tetrahedral configuration. The calculation indicates a charge transfer from Sr (or Ba) atoms to Ge atoms along with the formation of covalent bonds among Ge atoms in Ge tetrahedral. The computational results confirm that these two germanies are Zintl phase described as Sr{sub 2}Ge{sub 4} (or Ba{sub 2}Ge{sub 4}), which are characterized by positively charged [Sr{sub 2} (or Ba{sub 2})]{sup 2.59+} and negatively charged [Ge{sub 4}]{sup 2.59−} units acting as cation and anion, respectively. These compounds are indirect gap semiconductors with band gap estimated to be E{sub g} = 1.02 eV for BaGe{sub 2} and E{sub g} = 0.89 eV for SrGe{sub 2} which are in good agreement with our experimental measured values (E{sub g} = 0.97 eV for BaGe{sub 2} and E{sub g} = 0.82 eV for SrGe{sub 2}). Our calculations demonstrate that the band gaps are narrowed by application of hydrostatic pressure; the pressure coefficients are estimated to be −10.54 for SrGe{sub 2} and −10.06 meV/GPa for BaGe{sub 2}. Optical properties reveal that these compounds have large absorption coefficient (∼7.5 × 10{sup 4} cm{sup −1} at 1.5 eV) and the estimated high frequency (static) dielectric constant are, ε{sub ∞}(ε{sub 0}) ≈ 12.8(20.97) for BaGe{sub 2} and ε{sub ∞}(ε{sub 0}) ≈ 14.27(22.87) for SrGe{sub 2}.

Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

2015-10-14

Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

Quinary wurtzite Zn-Ga-Ge-N-O solid solutions and their photocatalytic properties under visible light irradiation

Science.gov (United States)

Xie, Yinghao; Wu, Fangfang; Sun, Xiaoqin; Chen, Hongmei; Lv, Meilin; Ni, Shuang; Liu, Gang; Xu, Xiaoxiang

2016-01-01

Wurtzite solid solutions between GaN and ZnO highlight an intriguing paradigm for water splitting into hydrogen and oxygen using solar energy. However, large composition discrepancy often occurs inside the compound owing to the volatile nature of Zn, thereby prescribing rigorous terms on synthetic conditions. Here we demonstrate the merits of constituting quinary Zn-Ga-Ge-N-O solid solutions by introducing Ge into the wurtzite framework. The presence of Ge not only mitigates the vaporization of Zn but also strongly promotes particle crystallization. Synthetic details for these quinary compounds were systematically explored and their photocatalytic properties were thoroughly investigated. Proper starting molar ratios of Zn/Ga/Ge are of primary importance for single phase formation, high particle crystallinity and good photocatalytic performance. Efficient photocatalytic hydrogen and oxygen production from water were achieved for these quinary solid solutions which is strongly correlated with Ge content in the structure. Apparent quantum efficiency for optimized sample approaches 1.01% for hydrogen production and 1.14% for oxygen production. Theoretical calculation reveals the critical role of Zn for the band gap reduction in these solid solutions and their superior photocatalytic acitivity can be understood by the preservation of Zn in the structure as well as a good crystallinity after introducing Ge.

Large-angle inclusive production of charged pions at the CERN ISR with transverse momenta less than 1.0 GeV/c

CERN Document Server

Alper, B; Booth, P; Bulos, F; Carroll, L J; Damgaard, G; Duff, Brian G; Heymann, Franz F; Jackson, J N; Jarlskog, G; Jönsson, L B; Klovning, A; Leistam, L; Lillethun, E; Lynch, G; Ølgaard-Nielsen, S; Prentice, M; Quarrie, D; von Dardel, Guy F; Weiss, J M

1973-01-01

The inclusive production of pi /sup +or-/ in proton-proton collisions has been measured for the transverse momentum range 0.15 to 1.0 GeV/c over an angular range of 29 degrees to 89 degrees in the centre-of- mass system and for centre-of-mass energies square root s=30.6 and 52.8 GeV. For each energy the invariant cross-section for fixed transverse momentum was found to increase by about 15% as the centre- of-mass rapidity decreases from 1 to 0, i.e. the 'central plateau' has not yet been reached. (8 refs).

Development of a nano-zirconia based {sup 68}Ge/{sup 68}Ga generator for biomedical applications

Energy Technology Data Exchange (ETDEWEB)

Chakravarty, Rubel [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Shukla, Rakesh [Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Ram, Ramu [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Tyagi, Avesh Kumar [Chemistry Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Dash, Ashutosh, E-mail: adash@barc.gov.i [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India); Venkatesh, Meera [Radiopharmaceuticals Division, Bhabha Atomic Research Centre, Mumbai-400085 (India)

2011-05-15

Introduction: Most of the commercially available {sup 68}Ge/{sup 68}Ga generator systems are not optimally designed for direct applications in a clinical context. We have developed a nano-zirconia based {sup 68}Ge/{sup 68}Ga generator system for accessing {sup 68}Ga amenable for the preparation of radiopharmaceuticals. Methods: Nano-zirconia was synthesized by the in situ reaction of zirconyl chloride with ammonium hydroxide in alkaline medium. The physical characteristics of the material were studied by various analytical techniques. A 740 MBq (20 mCi) {sup 68}Ge/{sup 68}Ga generator was developed using this sorbent and its performance was evaluated for a period of 1 year. The suitability of {sup 68}Ga for labeling biomolecules was ascertained by labeling DOTA-TATE with {sup 68}Ga. Results: The material synthesized was nanocrystalline with average particle size of {approx}7 nm, pore-size of {approx}4 A and a high surface area of 340{+-}10 m{sup 2} g{sup -1}. {sup 68}Ga could be regularly eluted from this generator in 0.01N HCl medium with an overall radiochemical yield >80% and with high radionuclidic (<10{sup -5}% of {sup 68}Ge impurity) and chemical purity (<0.1 ppm of Zr, Fe and Mn ions). The compatibility of the product for preparation of {sup 68}Ga-labeled DOTA-TATE under the optimized reaction conditions was found to be satisfactory in terms of high labeling yields (>99%). The generator gave a consistent performance with respect to the elution yield and purity of {sup 68}Ga over a period of 1 year. Conclusions: The feasibility of preparing an efficient {sup 68}Ge/{sup 68}Ga generator which can directly be used for biomedical applications has been demonstrated.

Coarsening of Ni-Ge solid-solution precipitates in 'inverse' Ni{sub 3}Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Ardell, Alan J., E-mail: alan.ardell@gmail.com [National Science Foundation, 4201 Wilson Boulevard, Arlington, VA 22230 (United States); Ma Yong [Aquatic Sensor Network Technology LLC, Storrs, CT 06268 (United States)

2012-07-30

Highlights: Black-Right-Pointing-Pointer We report microstructural evolution of disordered Ni-Ge precipitates in Ni{sub 3}Ge alloys. Black-Right-Pointing-Pointer Coarsening kinetics and particle size distributions are presented. Black-Right-Pointing-Pointer Data are analyzed quantitatively using the MSLW theory, but agreement is only fair. Black-Right-Pointing-Pointer The shapes of large precipitates are unusual, with discus or boomerang cross-sections. Black-Right-Pointing-Pointer Results are compared with morphology, kinetics of Ni-Al in inverse Ni{sub 3}Al alloys. - Abstract: The morphological evolution and coarsening kinetics of Ni-Ge solid solution precipitates from supersaturated solutions of hypostoichiometric Ni{sub 3}Ge were investigated in alloys containing from 22.48 to 23.50 at.% Ge at 600, 650 and 700 Degree-Sign C. The particles evolve from spheres to cuboids, though the flat portions of the interfaces are small. At larger sizes the precipitates coalesce into discus shapes, and are sometimes boomerang-shaped in cross section after intersection. The rate constant for coarsening increases strongly with equilibrium volume fraction, much more so than predicted by current theories; this is very different from the coarsening behavior of Ni{sub 3}Ge precipitates in normal Ni-Ge alloys and of Ni-Al precipitates in inverse Ni{sub 3}Al alloys. The activation energy for coarsening, 275.86 {+-} 24.17 kJ/mol, is somewhat larger than the result from conventional diffusion experiments, though within the limits of experimental error. Quantitative agreement between theory and experiment, estimated using available data on tracer diffusion coefficients in Ni{sub 3}Ge, is fair, the calculated rate constants exceeding measured ones by a factor of about 15. The particle size distributions are not in very good agreement with the predictions of any theory. These results are discussed in the context of recent theories and observations.

Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

International Nuclear Information System (INIS)

Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

2010-01-01

Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics

International Nuclear Information System (INIS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-01-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal–oxide–semiconductor field-effect-transistors (MOSFETs) with GeO x /Al 2 O 3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8–20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al 2 O 3 gate stacks are evaluated experimentally. The bulk charges in Al 2 O 3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  10 12 cm −2 at the GeO x /Ge interface and  −2.3  ×  10 12 cm −2 at the Al 2 O 3 /GeO x interface. The electric dipole at the Al 2 O 3 /GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  10 13 cm −2 . The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al 2 O 3 /GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al 2 O 3 /GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement. (paper)

[The REACH legislation: the consumer and environment protection perspective].

Science.gov (United States)

Gundert-Remy, Ursula

2008-12-01

REACH has been initiated with the aim of improving existing legislation. In order to assist in the interpretation of the REACH legislation, guidance documents have been developed, which have only lately become available. According to the REACH annexes and supported by guidance documents, waiving of test requirements will be possible, thus, opening the possibility that under REACH no new (eco)toxicological data will be required. Concerning products, a guidance document was released in April 2008 stating that the substance concentration threshold of 0.1 % (w/w) applies to the article as produced or imported and it does not relate to the homogeneous materials or parts of an article, but relates to the article as such (i.e., as produced or imported). Hence, notification will not be required for many products containing chemicals with properties which place them on the candidate list for authorization. In summary, it is at present not foreseeable whether the expected benefit of the REACH legislation will materialise for the environment and for the health of consumers and at the work place.

Impact parameter analysis of proton-antiproton elastic scattering from √s=7.6 GeV to √s=546 GeV

International Nuclear Information System (INIS)

Fearnley, T.

1985-09-01

The proton-antiproton elastic profile function GAMMA (b) and inelastic overlap function Gsub(in)(b) are calculated from a coherent set of proton-antiproton elastic scattering data at Psub(L)=30 and 50 GeV/c (√s=7.6 and 9.8 GeV), and at √s=53 and 546 GeV. The energy dependence of Gsub(in)(b) is studied in the low energy regime and in the high energy regime. The increase of the inelastic cross section from 50 GeV/c to 30 GeV/c and from √s=53 GeV to √s=546 GeV is found to originate from a peripheral increase of Gsub(in) around 1 fm, accompanied by a non-negligible central increase. The proton-antiproton collision at √s=53 GeV is shown to be slightly less absorptive centrally than pp at this energy, while it is more absorptive peripherally around 1.2 fm. The inelastic overlap functions strongly disagree with the predictions of geometrical scaling and factorizing eikonal models, both in the low energy regime psub(L)=30-50 GeV/c and in the high energy regime √s=53-546 GeV

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.

Science.gov (United States)

Yuryev, Vladimir A; Arapkina, Larisa V; Storozhevykh, Mikhail S; Chapnin, Valery A; Chizh, Kirill V; Uvarov, Oleg V; Kalinushkin, Victor P; Zhukova, Elena S; Prokhorov, Anatoly S; Spektor, Igor E; Gorshunov, Boris P

2012-07-23

: Issues of Ge hut cluster array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Dynamics of the RHEED patterns in the process of Ge hut array formation is investigated at low and high temperatures of Ge deposition. Different dynamics of RHEED patterns during the deposition of Ge atoms in different growth modes is observed, which reflects the difference in adatom mobility and their 'condensation' fluxes from Ge 2D gas on the surface for different modes, which in turn control the nucleation rates and densities of Ge clusters. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films.Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 μm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. A new design of quantum dot infrared photodetectors is proposed.By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies ranged from 0.3 to 1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk

70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

Energy Technology Data Exchange (ETDEWEB)

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

2015-02-23

Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

Density functional study of the decomposition pathways of SiH₃ and GeH₃ at the Si(100) and Ge(100) surfaces.

Science.gov (United States)

Ceriotti, M; Montalenti, F; Bernasconi, M

2012-03-14

By means of first-principles calculations we studied the decomposition pathways of SiH₃ on Ge(100) and of GeH₃ on Si(100), of interest for the growth of crystalline SiGe alloys and Si/Ge heterostructures by plasma-enhanced chemical vapor deposition. We also investigated H desorption via reaction of two adsorbed SiH₂/GeH₂ species (β₂ reaction) or via Eley-Rideal abstraction of surface H atoms from the impinging SiH₃ and GeH₃ species. The calculated activation energies for the different processes suggest that the rate-limiting step for the growth of Si/Ge systems is still the β₂ reaction of two SiH₂ as in the growth of crystalline Si.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.

Science.gov (United States)

Niu, Gang; Capellini, Giovanni; Schubert, Markus Andreas; Niermann, Tore; Zaumseil, Peter; Katzer, Jens; Krause, Hans-Michael; Skibitzki, Oliver; Lehmann, Michael; Xie, Ya-Hong; von Känel, Hans; Schroeder, Thomas

2016-03-04

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO2 matrix. These wafers were fabricated by complementary metal-oxide-semiconductor (CMOS) compatible nanotechnology. Calculations based on nucleation theory predict that the selective growth occurs close to thermodynamic equilibrium, where condensation of Ge adatoms on SiO2 is disfavored due to the extremely short re-evaporation time and diffusion length. The growth selectivity is ensured by the desorption-limited growth regime leading to the observed pattern independence, i.e. the absence of loading effect commonly encountered in chemical vapor deposition. The growth condition of high temperature and low deposition rate is responsible for the observed high crystalline quality of the Ge islands which is also associated with negligible Si-Ge intermixing owing to geometric hindrance by the Si nano-tip approach. Single island as well as area-averaged characterization methods demonstrate that Ge islands are dislocation-free and heteroepitaxial strain is fully relaxed. Such well-ordered high quality Ge islands present a step towards the achievement of materials suitable for optical applications.

Electron-electron interaction in p-SiGe/Ge quantum wells

International Nuclear Information System (INIS)

Roessner, Benjamin; Kaenel, Hans von; Chrastina, Daniel; Isella, Giovanni; Batlogg, Bertram

2005-01-01

The temperature dependent magnetoresistance of high mobility p-SiGe/Ge quantum wells is studied with hole densities ranging from 1.7 to 5.9 x 10 11 cm -2 . At magnetic fields below the onset of quantum oscillations that reflect the high mobility values (up to 75000 cm 2 /Vs), we observe the clear signatures of electron-electron interaction. We compare our experiment with the theory of electron-electron interaction including the Zeeman band splitting. The observed magnetoresistance is well explained as a superposition of band structure induced positive magnetoresistance and the negative magntoresistance due to the electron-electron interaction effect

Open charm yields in d+Au collisions at squareroot[sNN]=200 GeV.

Science.gov (United States)

Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Botje, M; Boucham, A; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Castillo, J; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopadhyay, S; Chen, H F; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cramer, J G; Crawford, H J; Das, D; Das, S; de Moura, M M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Fomenko, K; Fu, J; Gagliardi, C A; Gaillard, L; Gans, J; Ganti, M S; Gaudichet, L; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gutierrez, T D; Hallman, T J; Hamed, A; Hardtke, D; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Janik, M; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Khodyrev, V Yu; Kiryluk, J; Kisiel, A; Kislov, E M; Klay, J; Klein, S R; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kutuev, R Kh; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lin, G; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Miller, M L; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Sarsour, M; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schweda, K; Seger, J; Seyboth, P; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Skoro, G; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timoshenko, S; Tokarev, M; Trainor, T A; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Urkinbaev, A; Van Buren, G; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Vznuzdaev, M; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Wells, R; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Z; Xu, Z Z; Yamamoto, E; Yepes, P; Yurevich, V I; Zanevsky, Y V; Zhang, H; Zhang, W M; Zhang, Z P; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N

2005-02-18

Midrapidity open charm spectra from direct reconstruction of D0(D0)-->K-/+pi+/- in d+Au collisions and indirect electron-positron measurements via charm semileptonic decays in p+p and d+Au collisions at squareroot[sNN]=200 GeV are reported. The D0(D0) spectrum covers a transverse momentum (pT) range of 0.1GeV/c, whereas the electron spectra cover a range of 1GeV/c. The electron spectra show approximate binary collision scaling between p+p and d+Au collisions. From these two independent analyses, the differential cross section per nucleon-nucleon binary interaction at midrapidity for open charm production from d+Au collisions at BNL RHIC is dsigma(NN)cc/dy=0.30+/-0.04(stat)+/-0.09(syst) mb. The results are compared to theoretical calculations. Implications for charmonium results in A+A collisions are discussed.

Ge extraction from gasification fly ash

Energy Technology Data Exchange (ETDEWEB)

Oriol Font; Xavier Querol; Angel Lopez-Soler; Jose M. Chimenos; Ana I. Fernandez; Silvia Burgos; Francisco Garcia Pena [Institute of Earth Sciences ' Jaume Almera' , Barcelona (Spain)

2005-08-01

Water-soluble germanium species (GeS{sub 2}, GeS and hexagonal-GeO{sub 2}) are generated during coal gasification and retained in fly ash. This fact together with the high market value of this element and the relatively high contents in the fly ashes of the Puertollano Integrated Gasification in Combined Cycle (IGCC) plant directed our research towards the development of an extraction process for this element. Major objectives of this research was to find a low cost and environmentally suitable process. Several water based extraction tests were carried out using different Puertollano IGCC fly ash samples, under different temperatures, water/fly ash ratios, and extraction times. High Ge extraction yields (up to 84%) were obtained at room temperature (25{sup o}C) but also high proportions of other trace elements (impurities) were simultaneously extracted. Increasing the extraction temperature to 50, 90 and 150{sup o}C, Ge extraction yields were kept at similar levels, while reducing the content of impurities, the water/fly ash ratio and extraction time. The experimental data point out the influence of chloride, calcium and sulphide dissolutions on the Ge extraction. 16 refs., 9 figs., 6 tabs.

Cluster self-organization of germanate systems: suprapolyhedral precursor clusters and self-assembly of K2Nd4Ge4O13(OH)4, K2YbGe4O10(OH), K2Sc2Ge2O7(OH)2, and KScGe2O6(PYR)

International Nuclear Information System (INIS)

Ilyushin, G.D.; Dem'yanets, L.N.

2008-01-01

One performed the computerized (the TOPOS 4.0 software package) geometric and topological analyses of all known types of K, TR-germanates (TR = La-Lu, Y, Sc, In). The skeleton structure are shown as three-dimensional 3D, K, TR, Ge-patterns (graphs) with remote oxygen atoms. TR 4 3 3 4 3 3 + T 4 3 4 3, K 2 YbGe 4 O 14 (OH) pattern, TR 6 6 3 6 + T1 6 8 6 + T2 3 6 8, K 2 Sc 2 Ge 2 O 7 (OH) 2 , TR 6 4 6 4 + T 6 4 6 and KScGe 2 O 6 - TR 6 6 3 6 3 4 + T1 6 3 6 + T2 6 4 3 patterns served as crystal-forming 2D TR,Ge-patterns for K 2 Nd 4 Ge 4 O 13 (OH) 4 . One performed the 3D-simulation of the mechanism of self-arrangement of the crystalline structures: cluster-precursor - parent chain - microlayer - microskeleton (super-precursor). Within K 2 Nd 4 Ge 4 O 13 (OH) 4 , K 2 Sc 2 Ge 2 O 7 (OH) 2 and KScGe 2 O 6 one identified the invariant type of the cyclic hexapolyhedral cluster-precursor consisting of TR-octahedrons linked by diorthogroups stabilized by K atoms. For K 2 Nd 4 Ge 4 O 13 (OH) 4 one determined the type of the cyclic tetrapolyhedral cluster-precursor consisting of TR-octavertices linked by tetrahedrons. The cluster CN within the layer just for KScGe 2 O 6 water-free germanate (the PYR pyroxene analog) is equal to 6 (the maximum possible value), while in the rest OH-containing germanates it constitutes 4. One studied the formation mechanism of Ge-radicals in the form of Ge 2 O 7 and Ge 4 O 13 groupings, GeO 3 chain and the tubular structure consisting of Ge 8 O 20 fixed cyclic groupings [ru

Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

International Nuclear Information System (INIS)

Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

2002-01-01

The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

Identified hadron transverse momentum spectra in Au+Au collisions at sNN=62.4 GeV

Science.gov (United States)

Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; Nieuwenhuizen, G. J. Van; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Wenger, E.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wysłouch, B.

2007-02-01

Transverse momentum spectra of pions, kaons, protons, and antiprotons from Au+Au collisions at sNN = 62.4 GeV have been measured by the PHOBOS experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory. The identification of particles relies on three different methods: low momentum particles stopping in the first detector layers; the specific energy loss (dE/dx) in the silicon spectrometer, and time-of-flight measurement. These methods cover the transverse momentum ranges 0.03 0.2, 0.2 1.0, and 0.5 3.0 GeV/c, respectively. Baryons are found to have substantially harder transverse momentum spectra than mesons. The pT region in which the proton to pion ratio reaches unity in central Au+Au collisions at sNN = 62.4 GeV fits into a smooth trend as a function of collision energy. At low transverse mass, the spectra of various species exhibit a significant deviation from transverse mass scaling. The observed particle yields at very low pT are comparable to extrapolations from higher pT for kaons, protons and antiprotons. By comparing our results to Au+Au collisions at sNN = 200 GeV, we conclude that the net proton yield at midrapidity is proportional to the number of participant nucleons in the collision.

Effects of Ge-132 and GeO2 on seed germination and seedling growth of Oenothera biennis L. under NaCl stress.

Science.gov (United States)

Liu, Yan; Hou, Long-Yu; Li, Qing-Mei; Jiang, Ze-Ping; Gao, Wei-Dong; Zhu, Yan; Zhang, Hai-Bo

2017-01-01

To investigate the effects of β-carboxyethyl germanium sequioxide (Ge-132) and germanium dioxide (GeO 2 ) on improving salt tolerance of evening primrose (Oenothera biennis L.), seed germination, seedling growth, antioxidase and malondialdehyde (MDA) were observed under treatments of various concentrations (0, 5, 10, 20, 30 μM) of Ge in normal condition and in 50 mM NaCl solution. The results showed that both Ge-132 and GeO 2 treatments significantly increased seed germination percentage and shoot length in dose-dependent concentrations but inhibited early root elongation growth. 5-30 μM Ge-132 and 10, 20 μM GeO 2 treatments could significantly mitigate even eliminate harmful influence of salt, representing increased percentage of seed germination, root length, ratio between length of root and shoot, and decreased shoot length. These treatments also significantly decreased peroxidase (POD) and catalase (CAT) activities and MDA content. The mechanism is likely that Ge scavenges reactive oxygen species - especially hydrogen peroxide (H 2 O 2 ) - by its electron configuration 4S 2 4P 2 so as to reduce lipid peroxidation. This is the first report about the comparison of bioactivity effect of Ge-132 and GeO 2 on seed germination and seedling growth under salt stress. We conclude that Ge-132 is better than GeO 2 on promoting salt tolerance of seed and seedling.

Charged particle spectra in oxygen-induced reactions at 14. 6 and 60 GeV/Nucleon

Energy Technology Data Exchange (ETDEWEB)

Adamovich, M I; Aggarwal, M M; Arora, R; Alexandrov, Y A; Azimov, S A; Badyal, S K; Basova, E; Bhalla, K B; Bahsin, A; Bhatia, V S; Bomdarenko, R A; Burnett, T H; Cai, X; Chernova, L P; Chernyavski, M M; Dressel, B; Friedlander, E M; Gadzhieva, S I; Ganssauge, E R; Garpman, S; Gerassimov, S G; Gill, A; Grote, J; Gulamov, K G; Gulyamov, V G; Gupta, V K; Hackel, S; Heckman, H H; Jakobsson, B; Judek, B; Katroo, S; Kadyrov, F G; Kallies, H; Karlsson, L; Kaul, G L; Kaur, M; Kharlamov, S P; Kohli, J; Kumar, V; Lal, P; Larionova, V G; Lindstrom, P J; Liu, L S; Lokanathan, S; Lord, J; Lukicheva, N S; Mangotra, L K; Maslennikova, N V; Mitta, I S; Monnand, E; Mookerjee, S; Mueller, C; Nasyrov, S H; Nvtny, V S; Orlova, G I; Otterlund, I; Peresadko, N G; Persson, S; Petrov, N V; Qian, W Y; Raniwala, R; Raniwala, S; Rao, N K; Rhee, J Y; Shaidkhanov, N; Salmanova, N G; Schulz, W; Schussler, F; Shukla, V S; Skelding, D; Soederstroe,

1989-10-01

Multiplicity distributions and pseudo-rapidity distributions of charged particles from oxygen-induced nuclear reactions at 14.6 and 60 GeV/nucleon are presented. The data were taken from the EMU{minus}01 emulsion stacks and compared to simulations from the Lund Monte Carlo Model (FRITIOF).

Updated Reach of the CERN LHC and Constraints from Relic Density, $b \\to s\\gamma$ and $a_{\\mu}$ in the mSUGRA Model

CERN Document Server

Baer, Howard W; Belyaev, A; Krupovnickas, T; Tata, Xerxes; Baer, Howard; Balazs, Csaba; Belyaev, Alexander; Krupovnickas, Tadas; Tata, Xerxes

2003-01-01

We present an updated assessment of the reach of the CERN LHC pp collider for supersymmetric matter in the context of the minimal supergravity (mSUGRA) model. In addition to previously examined channels, we also include signals with an isolated photon or with a leptonically decaying Z boson. For an integrated luminosity of 100 fb-1, values of m_{1/2}\\sim 1400 GeV can be probed for small m_0, corresponding to a gluino mass of m_{\\tg}\\sim 3 TeV. For large m_0, in the hyperbolic branch/focus point region, m_{1/2}\\sim 700 GeV can be probed, corresponding to m_{\\tg}\\sim 1800 GeV. We also map out parameter space regions preferred by the measured values of the dark matter relic density, the b\\to s\\gamma decay rate, and the muon anomalous magnetic moment a_\\mu, and discuss how SUSY might reveal itself in these regions.

Low-energy neutron measurements in an iron calorimeter structure irradiated by 200 GeV/c hadrons

Energy Technology Data Exchange (ETDEWEB)

Russ, J S [Carnegie-Mellon University, Pittsburgh, PA (United States); Stevenson, G R; Fasso, A; Nielsen, M C [CERN, Geneva (Switzerland); Furetta, C; Rancoita, P G; Vismara, I [INFN, Milan (Italy)

1989-04-21

Of serious concern in the design of detectors for the new high-luminosity hadron-hadron colliders are the radiation damage effects on silicon and other detectors of low-energy neutrons produced by spallation evaporation or fission processes. Because of the lack of experimental information on the number of neutrons with energies between 0.1 and 10 MeV in the cascades originating from high-energy hadrons, an experiment was carried out using activation detector techniques to measure the neutron fluence in a cascade initiated by 200 GeV hadrons in acalorimeter-like iron structure. It was found that at the maximum of the cascade one produces approximately 3 neutrons per GeV of incident energy: some 70% of these are of energies between 0.1 and 5 MeV, the remainder are fairly uniformly distributed in energy between 5 and several hundred MeV. The number of albedo neutrons leaving the front face of the calorimeter structure was about 0.3 neutrons per GeV of incident energy with in energy distribution similar to those at cascade maximum These data confirm that neutron-induced damage will he of concern in the design of detectors for the new colliders and that further measurements and calculations are necessary for a correct assessment of this damage. (author)

Reaching the hard-to-reach.

Science.gov (United States)

Valdes, C

1992-01-01

Guatemala's family planning (FP) programs are innovative but contraceptive use is only 23%. Total fertility is 5.3 children/woman, and the 9.5 million population will double in 23 years. The problem is poverty and illiteracy among rural residents removed from health services. 80% live in poverty and 80% are illiterate. Government effort is devoted to combating diseases such as diarrhea so there are few funds for implementing a comprehensive population policy. There is support within the national government but FP lacks priority status. APROFAM's goals are to use innovative marketing methods to inform the rural population who lack access to and knowledge about FP. Service delivery is constrained by the difficulty in reaching remote areas where 4 out of 10 indigenous Guatemalans live. Infant mortality can reach as high as 200/1000 live births. Population growth has slowed, and APROFAM plans to reach 16,000 more in the future. Promotions are conducted in several languages and aired on radio, television, and in the print media. It has been found that market research is the most effective strategy in reaching indigenous families. APROFAM has also been effective in upgrading service facilities through training, client surveys, and setting improved clinic standards. Breastfeeding, training, and voluntary sterilization programs contribute to the primary care effort. The example is given of Paulina Lebron from a very poor area who has learned how to space her children and thus improve the standard of living for her family. Eventually, she convinced herself and her family that sterilization was necessary, and now the couple enjoy the bliss of newlyweds without fear of pregnancy.

Precision measurement of quasi-elastic transverse and longitudinal response functions in the range 0.55 GeV/c lte |q-right arrow| lte 1.0 GeV/c

Energy Technology Data Exchange (ETDEWEB)

Atac, Hamza [Temple University, Philadelphia, PA

2017-12-01

The Coulomb Sum is defined by the quasi-elastic nucleon knock-out process and it is the integration of the longitudinal response function over the energy loss of the incident electron. The Coulomb sum goes to the total charge at large q. The existing measurements of the Coulomb Sum Rule show disagreement with the theoretical calculations for the medium and heavy nuclei. To find the reason behind the disagreement might answer the question of whether the properties of the nucleons are affected by the nuclear medium or not. In order to determine the Coulomb Sum in nuclei, a precision measurement of inclusive electron scattering in the quasi-elastic region was performed at the Thomas Jefferson National Accelerator Facility. Incident electrons with energies ranging from 0.4 GeV to 4 GeV scattered off 4He,12C,56Fe and 208Pb nuclei at four scattering angles (15 deg.; 60 deg.; 90 deg.; 120 deg.) and scattered energies ranging from 0.1 GeV to 4 GeV. The Born cross sections were extracted for the Left High Resolution Spectrometer (LHRS) and the Right High Resolution Spectrometer 56Fe data. The Rosenbluth separation was performed to extract the transverse and longitudinal response functions at 650 MeV three-momentum transfer. The preliminary results of the longitudinal and transverse functions were extracted for 56Fe target at 650 MeV three-momentum transfer.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

Energy Technology Data Exchange (ETDEWEB)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

Influence of the entrance channel in the fusion reaction 318 MeV 74Ge+74Ge

International Nuclear Information System (INIS)

Zhu, L.H.; Cinausero, M.; Angelis, G. de; De Poli, M.; Fioretto, E.; Gadea, A.; Napoli, D.R.; Prete, G.; Lucarelli, F.

1998-01-01

Entrance channel effects in the fusion of heavy ions have been studied by using the 74 Ge+ 74 Ge reaction at 318 MeV. The population of the yrast superdeformed band in 144 Gd shows an increase when compared with the results obtained in the more asymmetric 48 Ti+ 100 Mo reaction at 215 MeV. The relative yields of the different evaporation residues produced in the 74 Ge+ 74 Ge and in the 48 Ti+ 100 Mo reactions are very similar, with the exception of the 145,144 Gd residual nuclei (3n and 4n decay channels) which are populated with a larger yield in the symmetric reaction. Statistical model calculations reproduce qualitatively such effect if a fission delay is explicitly taken into account. Effects related to fusion barrier fluctuations seem to be important in determining the spin distributions of the compound nucleus. The spectra of the high energy γ-rays emitted in the 74 Ge+ 74 Ge reaction have been measured as a function of the γ-ray multiplicity as well as in coincidence with selected evaporation residues. They are reproduced by standard statistical model calculations with GDR parameters taken from systematics, demonstrating that, in agreement with dynamical model prediction, the emission of γ-rays from the dinucleus formed in the earlier stage of the collision is unimportant. (orig.)

The germanides Er{sub 5}Pd{sub 4}Ge{sub 8} and Tm{sub 5}Pd{sub 4}Ge{sub 8}. 3D [Pd{sub 4}Ge{sub 8}] polyanions with Ge{sub 2} dumb-bells and Ge{sub 4} chains in cis-conformation

Energy Technology Data Exchange (ETDEWEB)

Heying, Birgit; Rodewald, Ute C.; Poettgen, Rainer [Muenster Univ. (Germany). Inst. fuer Anorganische und Analytische Chemie

2017-07-01

Tm{sub 5}Pd{sub 4}Ge{sub 8} was synthesized by melting of the elements in an arc-melting furnace. The new germanide was characterized by powder and single-crystal X-ray diffraction: own structure type, P2{sub 1}/m, a=574.3(1), b=1380.4(3), c=836.4(1) pm, β=107.57(2) , V=0.6321 nm{sup 3}, wR2=0.0578, 2533 F{sup 2} values, 86 variables. The palladium and germanium atoms built up a three-dimensional [Pd{sub 4}Ge{sub 8}]{sup 15-} polyanionic network which contains a unique germanium substructure composed of the Zintl anions Ge{sub 2}{sup 6-} dumb-bells and Ge{sub 4}{sup 10-} chains in cis-conformation. The palladium atoms within the network have distorted square pyramidal germanium coordination. The three crystallographically independent thulium atoms have coordination numbers 15, 16 and 17 with partial motifs of the Frank-Kasper type polyhedra. The isotypic germanide Er{sub 5}Pd{sub 4}Ge{sub 8} forms only after annealing the arc-melted sample at 1070 K for 1 week: a=575.14(9), b=1386.3(3), c=838.4(1) pm, β=107.51(2) , V=0.6375 nm{sup 3}.

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

Science.gov (United States)

Rozé, Fabien; Gourhant, Olivier; Blanquet, Elisabeth; Bertin, François; Juhel, Marc; Abbate, Francesco; Pribat, Clément; Duru, Romain

2017-06-01

The fabrication of ultrathin compressively strained SiGe-On-Insulator layers by the condensation technique is likely a key milestone towards low-power and high performances FD-SOI logic devices. However, the SiGe condensation technique still requires challenges to be solved for an optimized use in an industrial environment. SiGe oxidation kinetics, upon which the condensation technique is founded, has still not reached a consensus in spite of various studies which gave insights into the matter. This paper aims to bridge the gaps between these studies by covering various oxidation processes relevant to today's technological needs with a new and quantitative analysis methodology. We thus address oxidation kinetics of SiGe with three Ge concentrations (0%, 10%, and 30%) by means of dry rapid thermal oxidation, in-situ steam generation oxidation, and dry furnace oxidation. Oxide thicknesses in the 50 Å to 150 Å range grown with oxidation temperatures between 850 and 1100 °C were targeted. The present work shows first that for all investigated processes, oxidation follows a parabolic regime even for thin oxides, which indicates a diffusion-limited oxidation regime. We also observe that, for all investigated processes, the SiGe oxidation rate is systematically higher than that of Si. The amplitude of the variation of oxidation kinetics of SiGe with respect to Si is found to be strongly dependent on the process type. Second, a new quantitative analysis methodology of oxidation kinetics is introduced. This methodology allows us to highlight the dependence of oxidation kinetics on the Ge concentration at the oxidation interface, which is modulated by the pile-up mechanism. Our results show that the oxidation rate increases with the Ge concentration at the oxidation interface.

Measurements of $ep\to e^{\text{'}}{\pi }^{+}{\pi }^{-}{p}^{\text{'}}$ cross sections with CLAS at $1.40\mathrm{<span\; class="hlt">Ge</span>V}<W<2.0$ GeV and $2.0{\mathrm{<span\; class="hlt">Ge</span>V}}^2<Q^2<5.0{\mathrm{<span\; class="hlt">Ge</span>V}}^2$

Energy Technology Data Exchange (ETDEWEB)

Isupov, E. L.; Burkert, V. D.; Carman, D. S.; Gothe, R. W.; Hicks, K.; Ishkhanov, B. S.; Mokeev, V. I.; Adhikari, K. P.; Adhikari, S.; Adikaram, D.; Akbar, Z.; Amaryan, M. J.; Anefalos Pereira, S.; Avakian, H.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Batourine, V.; Bedlinskiy, I.; Biselli, A. S.; Briscoe, W. J.; Brooks, W. K.; Bültmann, S.; Cao, T.; Celentano, A.; Charles, G.; Chetry, T.; Ciullo, G.; Clark, L.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D' Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dupre, R.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fersch, R.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Garçon, M.; Gavalian, G.; Ghandilyan, Y.; Gilfoyle, G. P.; Giovanetti, K. L.; Girod, F. X.; Glazier, D. I.; Gleason, C.; Golovatch, E.; Griffioen, K. A.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Heddle, D.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Jenkins, D.; Jiang, H.; Joo, K.; Joosten, S.; Keller, D.; Khachatryan, G.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Kuleshov, S. V.; Kunkel, M.; Lanza, L.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; McKinnon, B.; Mineeva, T.; Mirazita, M.; Montgomery, R. A.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Murdoch, G.; Nadel-Turonski, P.; Niccolai, S.; Niculescu, G.; Niculescu, I.; Osipenko, M.; Paolone, M.; Paremuzyan, R.; Park, K.; Pasyuk, E.; Phelps, W.; Pogorelko, O.; Price, J. W.; Procureur, S.; Prok, Y.; Protopopescu, D.; Raue, B. A.; Ripani, M.; Riser, D.; Ritchie, B. G.; Rizzo, A.; Sabatié, F.; Salgado, C.; Schumacher, R. A.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sokhan, D.; Sparveris, N.; Stankovic, I.; Strakovsky, I. I.; Strauch, S.; Taiuti, M.; Tian, Ye; Torayev, B.; Trivedi, A.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Wei, X.; Wood, M. H.; Zachariou, N.; Zhang, J.

2017-08-01

This paper reports new exclusive cross sections for $e p \\to e' \\pi^+ \\pi^- p'$ using the CLAS detector at Jefferson Laboratory. These results are presented for the first time at photon virtualities 2.0 GeV² < Q² < 5.0 GeV² in the center-of-mass energy range 1.4 GeV < W < 2.0 GeV, which covers a large part of the nucleon resonance region. Using a model developed for the phenomenological analysis of electroproduction data, we see strong indications that the relative contributions from the resonant cross sections at W < 1.74 GeV increase with $Q^2$. These data considerably extend the kinematic reach of previous measurements. Exclusive $e p \\to e' \\pi^+ \\pi^- p'$ cross section measurements are of particular importance for the extraction of resonance electrocouplings in the mass range above 1.6 GeV.

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

Science.gov (United States)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-06-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

GE Healthcare | College of Engineering & Applied Science

Science.gov (United States)

Olympiad Girls Who Code Club FIRST Tech Challenge NSF I-Corps Site of Southeastern Wisconsin UW-Milwaukee ; Talent GE Healthcare is the founding partner of the Center for Advanced Embedded Systems (CAES), formerly GE Healthcare's needs for talent. Business Corporate Partners ANSYS Institute GE Healthcare Catalyst

Analysis of p-bar p scattering at 31 GeV and 62 GeV by the Chou-Yang model

International Nuclear Information System (INIS)

Padua, A.B. de; Covolan, R.J.M.; Souza Paes, J.T. de

1988-01-01

The p-bar p scattering is analysed at 31 GeV and 62 GeV energies for momentum transfers in the range O 2 . The experimental (dσ/dt)p-bar p values were fitted using a pure imaginary written as a sum of exponentials, that is, a(s,t)=a(s,O) σ n i=l α i e βit . Using the parameters obtained we have calculated the absorption constant K p-bar p the form factor and the mean square radius of the p-bar matter distribuition by the Chou-Yang model. These calculations reveal a ''dip'' around -t approx.= 1.3 (GeV/c) 2 at 31 GeV and 62 GeV. (author) [pt

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

International Nuclear Information System (INIS)

Knowlton, W.B.; Lawrence Berkeley Lab., CA

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 angstrom Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 angstrom, 500 angstrom, and 300 angstrom per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 angstrom/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 angstrom/side appear to correspond with the phonon transmission study

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

Energy Technology Data Exchange (ETDEWEB)

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Framework 'interstitial' oxygen in La10(GeO4)5-(GeO5)O2 apatite electrolyte

International Nuclear Information System (INIS)

Pramana, S.S.; White, T.J.

2007-01-01

Oxygen conduction at low temperatures in apatites make these materials potentially useful as electrolytes in solid-oxide fuel cells, but our understanding of the defect structures enabling ion migration is incomplete. While conduction along [001] channels is dominant, considerable inter-tunnel mobility has been recognized. Using neutron powder diffraction of stoichiometric 'La 10 (GeO 4 ) 6 O 3 ', it has been shown that this compound is more correctly described as an La 10 (GeO 4 ) 5- (GeO 5 )O 2 apatite, in which high concentrations of interstitial oxygen reside within the channel walls. It is suggested that these framework interstitial O atoms provide a reservoir of ions that can migrate into the conducting channels of apatite, via a mechanism of inter-tunnel oxygen diffusion that transiently converts GeO 4 tetrahedra to GeO 5 distorted trigonal bipyramids. This structural modification is consistent with known crystal chemistry and may occur generally in oxide apatites. (orig.)

A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

Science.gov (United States)

Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

2017-06-01

In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

Background reduction at low energies with BEGe detector operated in liquid argon using the GERDA-LArGe facility

Energy Technology Data Exchange (ETDEWEB)

Budjas, Dusan [Physik-Department E15, Technische Universitaet Muenchen (Germany); Collaboration: GERDA-Collaboration

2014-07-01

LArGe is a low background test facility used for proving innovative approaches to background reduction in support of the neutrinoless double beta decay experiment Gerda. These approaches include an anti-Compton veto using scintillation light detection from liquid argon, as well as a novel pulse shape discrimination method exploiting the characteristic electrical field distribution inside BEGe detectors. The latter technique can identify single-site events (typical for double beta decays) and efficiently reject multi-site events (typical for backgrounds from gamma-ray interactions), as well as different types of background events from detector surfaces. While the main focus of the LArGe facility is to assist with reaching the goal of Gerda - improving the sensitivity for {sup 76}Ge neutrinoless double beta decay search, reducing the background at low energies and lowering the energy threshold is also of interest. In particular such efforts can be potentially relevant for search of dark matter or low energy neutrino interactions. In this talk I present the experimental measurement of the low energy region with a BEGe detector operated in LArGe with the application of powerful background suppression methods. The performance will be compared to that of some dedicated dark matter detection experiments.

PACE-90 water and solute transport calculations for 0.01, 0.1, and 0. 5 mm/yr infiltration into Yucca Mountain

International Nuclear Information System (INIS)

Dykhuizen, R.C.; Eaton, R.R.; Hopkins, P.L.; Martinez, M.J.

1991-12-01

Numerical results are presented for the Performance Assessment Calculational Exercise (PACE-90). One- and two-dimensional water and solute transport are presented for steady infiltration into Yucca Mountain. Evenly distributed infiltration rates of 0.01, 0.1, and 0.5 mm/yr were considered. The calculations of solute transport show that significant amounts of radionuclides can reach the water table over 100,000 yr at the 0.5 mm/yr rate. For time periods less than 10,000 yr or infiltrations less than 0.1 mm/yr very little solute reaches the water table. The numerical simulations clearly demonstrate that multi-dimensional effects can result in significant decreases in the travel time of solute through the modeled domain. Dual continuum effects are shown to be negligible for the low steady state fluxes considered. However, material heterogeneities may cause local amplification of the flux level in multi-dimensional flows. These higher flux levels may then require modeling of a dual continuum porous medium

Optical and structural investigations of self-assembled Ge/Si bi-layer containing Ge QDs

Energy Technology Data Exchange (ETDEWEB)

Samavati, Alireza, E-mail: alireza.samavati@yahoo.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Othaman, Z., E-mail: zulothaman@gmail.com [Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor (Malaysia)

2014-10-15

We report the influence of Si spacer thickness variation (10–40 nm) on structural and optical properties of Ge quantum dots (QDs) in Ge/Si(1 0 0) bi-layer grown by radio frequency magnetron sputtering. AFM images reveal the spacer dependent width, height, root mean square roughness and number density of QDs vary in the range of ∼12–25 nm, ∼2–6 nm, ∼1.95–1.05 nm and ∼0.55×10{sup 11}–2.1×10{sup 11} cm{sup −2}, respectively. XRD patterns exhibit the presence of poly-oriented structures of Ge with preferred growth along (1 1 1) direction accompanied by a reduction in strain from 4.9% to 1.2% (estimated from Williamson–Hall plot) due to bi-layering. The room temperature luminescence displays strong blue–violet peak associated with a blue shift as much as 0.05 eV upon increasing the thickness of Si spacer. This shift is attributed to the quantum size effect, the material intermixing and the strain mediation. Raman spectra for both mono and bi-layer samples show intense Ge–Ge optical phonon mode that is shifted towards higher frequency. Furthermore, the first order features of Raman spectra affirm the occurrence of interfacial intermixing and phase formation during deposition. The excellent features of the results suggest that our systematic method may constitute a basis for the tunable growth of Ge QDs suitable in nanophotonics. - Highlights: • High quality bilayered hetero-structure Ge/Si using economic and easy rf magnetron sputtering fabrication method. • The role of phonon-confinement and strain relaxation mechanisms. • Influence of bilayering on evolutionary growth dynamics. • Band gap shift of visible PL upon bilayering.

Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

Science.gov (United States)

Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

2016-12-01

Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions

National Research Council Canada - National Science Library

Soret, R. A; Sun, G; Cheng, H; Menendez, J; Khurgin, J

2007-01-01

The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X...

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

Science.gov (United States)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Isobaric analogue states of 73Ge via 72Ge(3He,d)73As reaction

International Nuclear Information System (INIS)

Ramaswamy, C.R.; Puttaswamy, N.G.; Sarma, N.

1974-01-01

The 72 Ge( 3 He,d) 73 As reaction has been studied at 20 MeV incident 3 He energy using an MP tandem and a multigap spectrograph. The energy spectrum of deuterons in the region between 9 to 10.5 MeV excitation energy of 73 As shows analogue states corresponding to G.S., 570, 673, 805, 900, 1050, and 1350 KeV states of 73 Ge. Angular distributions for the analogue states and 1-values of the transferred protons are extracted. The results are compared with available data on the levels of 73 Ge. (author)

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

Science.gov (United States)

Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

2012-09-07

We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

Organic geochemistry and pore water chemistry of sediments from Mangrove Lake, Bermuda

Science.gov (United States)

Hatcher, P.G.; Simoneit, B.R.T.; MacKenzie, F.T.; Neumann, A.C.; Thorstenson, D.C.; Gerchakov, S.M.

1982-01-01

Mangrove Lake, Bermuda, is a small coastal, brackish-water lake that has accumulated 14 m of banded, gelatinous, sapropelic sediments in less than 104 yr. Stratigraphic evidence indicates that Mangrove Lake's sedimentary environment has undergone three major depositional changes (peat, freshwater gel, brackish-water gel) as a result of sea level changes. The deposits were examined geochemically in an effort to delineate sedimentological and diagenetic changes. Gas and pore water studies include measurements of sulfides, ammonia, methane, nitrogen gas, calcium, magnesium, chloride, alkalinity, and pH. Results indicate that sulfate reduction is complete, and some evidence is presented for bacterial denitrification and metal sulfide precipitation. The organic-rich sapropel is predominantly algal in origin, composed mostly of carbohydrates and insoluble macromolecular organic matter called humin with minor amounts of proteins, lipids, and humic acids. Carbohydrates and proteins undergo hydrolysis with depth in the marine sapropel but tend to be preserved in the freshwater sapropel. The humin, which has a predominantly aliphatic structure, increases linearly with depth and composes the greatest fraction of the organic matter. Humic acids are minor components and are more like polysaccharides than typical marine humic acids. Fatty acid distributions reveal that the lipids are of an algal and/or terrestrial plant source. Normal alkanes with a total concentration of 75 ppm exhibit two distribution maxima. One is centered about n-C22 with no odd/even predominance, suggestive of a degraded algal source. The other is centered at n-C31 with a distinct odd/even predominance indicative of a vascular plant origin. Stratigraphic changes in the sediment correlate to observed changes in the gas and pore water chemistry and the organic geochemistry. ?? 1982.

Band structure analysis in SiGe nanowires

Energy Technology Data Exchange (ETDEWEB)

Amato, Michele [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy); Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy); Palummo, Maurizia [European Theoretical Spectroscopy Facility (ETSF) (Italy); CNR-INFM-SMC, Dipartimento di Fisica, Universita di Roma, ' Tor Vergata' , via della Ricerca Scientifica 1, 00133 Roma (Italy); Ossicini, Stefano, E-mail: stefano.ossicini@unimore.it [' Centro S3' , CNR-Istituto Nanoscienze, via Campi 213/A, 41100 Modena (Italy) and Dipartimento di Scienze e Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy) and European Theoretical Spectroscopy Facility - ETSF (Italy) and Centro Interdipartimentale ' En and Tech' , Universita di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42100 Reggio Emilia (Italy)

2012-06-05

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Band structure analysis in SiGe nanowires

International Nuclear Information System (INIS)

Amato, Michele; Palummo, Maurizia; Ossicini, Stefano

2012-01-01

One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.

Nuclear energy outlook: a GE perspective

International Nuclear Information System (INIS)

Fuller, J.

2006-01-01

Full text: Full text: As one of the world's leading suppliers of power generation and energy delivery technologies, GE Energy provides comprehensive solutions for coal, oil, natural gas and nuclear energy; renewable resources such as wind, solar and biogas, along with other alternative fuels. With the ever increasing demand for energy and pressures to decrease greenhouse gas emissions, global trends indicate a move towards building more base line nuclear generation capacity. As a reliable, cost-competitive option for commercial power generation, nuclear energy also addresses many of the issues the world faces when it comes to the environment. Since developing nuclear reactor technology in the 1950s, GE's Boiling Water Reactor (BWR) technology accounts for more than 90 operating plants in the world today. Building on that success, GE's ABWR design is now the first and only Generation 111 nuclear reactor in operation today. This advanced reactor technology, coupled with current construction experience and a qualified global supply chain, make ESBWR, GE's Generation III+ reactor design, an attractive option for owners considering adding nuclear generation capacity. In pursuit of new technologies, GE has teamed with Silex to develop, commercialize and license third generation laser enrichment technology. By acquiring the exclusive rights to develop and commercialize this technology, GE is positioned to support the anticipated global demands for enriched uranium. At GE, we are continuing to develop imaginative ideas and investing in products that are cost effective, increase productivity, limit greenhouse gas emissions, and improve safety and security for our customers

Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

Science.gov (United States)

Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

2018-04-01

The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

Dimorphism in La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}? How exploratory syntheses led to surprising new finds in the La-Ge and Ce-Ge binary phase diagrams

Energy Technology Data Exchange (ETDEWEB)

Suen, Nian-Tzu; Bobev, Svilen [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE (United States)

2014-04-15

Reported are the synthesis, the crystal structures, and the electronic structures of two new tetragonal phases, La{sub 5}Ge{sub 3} and Ce{sub 5}Ge{sub 3}. Both title compounds crystallize in the Pu{sub 5}Rh{sub 3} (P4/ncc) structure type, which has close structural relationship with the W{sub 5}Si{sub 3} (I4/mcm) structure type. The synthetic results, supported by thermal analysis suggest that this tetragonal phase is only stable at relatively low temperature and it transforms to the hexagonal form (Mn{sub 5}Si{sub 3} structure type, P6{sub 3}/mcm) at above 850 C. The structural relationship between La{sub 5}Ge{sub 3} (Pu{sub 5}Rh{sub 3} type) and La{sub 5}Sn{sub 3} (W{sub 5}Si{sub 3} type) is discussed as well. Temperature dependent DC magnetization and resistivity measurements indicate that the tetragonal phase La{sub 5}Ge{sub 3} exhibits Pauli-like paramagnetism and is a good metallic conductor. For the tetragonal phase Ce{sub 5}Ge{sub 3}, the magnetic behavior obeys the Curie-Weiss law in the high-temperature regime, while it deviates from the Curie-Weiss law at low temperature. No long-range magnetic ordering was observed down to 5 K, although short-range correlations can be inferred below ca. 50 K. The resistivity measurements of Ce{sub 5}Ge{sub 3} also show metallic-like temperature dependence, although the low-temperature behavior resembling a T{sup 2} law could signify anomalous electron-scattering (e.g., Kondo-like effect). The electronic structures of multiple phases with the same nominal compositions, computed by the TB-LMTO-ASA method, are compared and discussed. (Copyright copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Strain relaxation of germanium-tin (GeSn) fins

Science.gov (United States)

Kang, Yuye; Huang, Yi-Chiau; Lee, Kwang Hong; Bao, Shuyu; Wang, Wei; Lei, Dian; Masudy-Panah, Saeid; Dong, Yuan; Wu, Ying; Xu, Shengqiang; Tan, Chuan Seng; Gong, Xiao; Yeo, Yee-Chia

2018-02-01

Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were formed by electron beam lithography (EBL) patterning and dry etching. The strain in the Ge1-xSnx fins having fin widths (WFin) ranging from 1 μm down to 80 nm was characterized using micro-Raman spectroscopy. Raman measurements show that the strain relaxation increases with decreasing WFin. Finite element (FE) simulation shows that the strain component in the transverse direction relaxes with decreasing WFin, while the strain component along the fin direction remains unchanged. For various Ge1-xSnx fin widths, transverse strain relaxation was further extracted using micro-Raman spectroscopy, which is consistent with the simulation results.

Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure

Energy Technology Data Exchange (ETDEWEB)

Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Maekura, Takayuki [Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Yamamoto, Keisuke; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

2016-03-01

Direct band gap (DBG) electroluminescence (EL) and photo detection were studied at room temperature for n-type bulk germanium (Ge) diodes with a fin type lateral HfGe/Ge/TiN structure. DBG EL spectra peaked at 1.55 μm were clearly observed due to small hole and electron barrier heights of HfGe/Ge and TiN/Ge contacts. DBG EL peak intensity increased with increasing doping level of Ge substrate due to increased electron population in direct conduction band. The integrated intensity of DBG EL spectrum is proportional to the area of active region, implying a good surface-uniformity of EL efficiency. Small dark current intensity was measured as 2.4 × 10{sup −7} A under a reverse bias voltage of − 1 V, corresponding to dark current densities of 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2}. At the wavelength of 1.55 μm, a linear dependence of photo current intensity on laser power was observed with a responsivity of 0.44 A/W at a reverse bias voltage of − 1 V. - Highlights: • Lateral HfGe/Ge/TiN diodes were fabricated on bulk Ge substrates. • The highest temperature was 400 °C for the entire fabrication process. • Electroluminescence spectra were measured for HfGe/Ge/TiN diodes with different parameters. • Dark current densities were 5.3 × 10{sup −10} A/μm or 3.2 × 10{sup −10} A/μm{sup 2} at − 1 V. • Responsivity was 0.44 A/W, corresponding to an external quantum efficiency of 35.2%.

High-pressure structural behavior of nanocrystalline Ge

DEFF Research Database (Denmark)

Wang, H.; Liu, J. F.; Yan, H.

2007-01-01

The equation of state and the pressure of the I-II transition have been studied for nanocrystalline Ge using synchrotron x-ray diffraction. The bulk modulus and the transition pressure increase with decreasing particle size for both Ge-I and Ge-II, but the percentage volume collapse at the transi...

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

International Nuclear Information System (INIS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-01-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing

Energy Technology Data Exchange (ETDEWEB)

Itoh, Yuhki, E-mail: itoh.yuhki@ecei.tohoku.ac.jp; Hatakeyama, Shinji; Kawashima, Tomoyuki; Washio, Katsuyoshi

2016-03-01

Effects of carbon (C) atoms on solid-phase epitaxial growth of Ge on Si(100) have been studied. C and Ge layers were deposited on Si(100) substrates at low temperature (150–300 °C) by using solid-source molecular beam epitaxy (MBE) system and subsequently annealed at 650 °C in the MBE chamber. The surface morphology after annealing changed depending on deposited amounts of C and deposition temperature of Ge. Ge dots were formed for small amounts of C while smooth Ge films were formed by large amounts of C varying with the Ge deposition temperature. The surface morphology after annealing was also affected by the as-deposited Ge crystallinity. The change in surface morphology depending on the amounts of deposited C was considered to be affected by the formation of Ge–C bonds which relieved the misfit strain between Ge and Si. The crystallinity of Ge deteriorated with increasing C coverage due to the incorporation of insoluble C atoms in the shape of both dots and films. - Highlights: • Effects of carbon on solid-phase epitaxy of C/Ge/Si(100) were studied. • Surface morphology changed depending on C amounts and Ge deposition temperature. • Solid-phase growth of Ge changed from large dots to smooth films with C coverage. • Transition of surface morphology was affected by the formation of Ge–C bonds.

Monolithically Integrated Ge-on-Si Active Photonics

Directory of Open Access Journals (Sweden)

Jifeng Liu

2014-07-01

Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 × 1

International Nuclear Information System (INIS)

Yu, Shi; Qing-Qing, Sun; Lin, Dong; Han, Liu; Shi-Jin, Ding; Wei, Zhang

2009-01-01

The reaction mechanisms of Al(CH 3 ) 3 (TMA) adsorption on H-passivated GeSi(100)-2 × 1 surface are investigated with density functional theory. The Si–Ge and Ge–Ge one-dimer cluster models are employed to represent the GeSi(100)-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si–H * and Ge–H * sites is considered. The activation barrier of TMA with the Si–H * site (1.2eV) is higher than that of TMA with the Ge-H * site (0.91 eV), which indicates that the reaction proceeds more slowly on the Si-H * site than on the Ge-H * site. In addition, adsorption of TMA is more energetically favorable on the Ge–Ge dimer than on the Si–Ge dimer of H-passivated SiGe. (atomic and molecular physics)

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

The Au modified Ge(1 1 0) surface

Science.gov (United States)

Zhang, L.; Kabanov, N. S.; Bampoulis, P.; Saletsky, A. M.; Zandvliet, H. J. W.; Klavsyuk, A. L.

2018-05-01

The pristine Ge(1 1 0) surface is composed of Ge pentagons, which are arranged in relatively large (16 × 2) and c(8 × 10) unit cells. The deposition of sub-monolayer amounts of Au and mild annealing results into de-reconstructed Ge(1 1 0) regions completely free of Ge pentagons and regions composed of nanowires that are aligned along the high symmetry [ 1 1 bar 0 ] direction of the Ge(1 1 0) surface. The de-reconstructed Ge(1 1 0) regions consist of atomic rows that are aligned along the [ 1 1 bar 0 ] direction. A substantial fraction of these substrate rows are straight and resemble the atom rows of the unreconstructed, i.e. bulk terminated, Ge(1 1 0) surface, whereas the other substrate rows have a meandering appearance. These meandering atom rows are comprised of two types of atoms, one type that appears dim, whereas the other type appears bright in filled-state scanning tunneling microscopy images. Using density functional theory calculations, we have tested more than 20 different atomic models for the meandering atom rows. The density functional theory calculations reveal that it is energetically favorable for the deposited Au atoms to exchange position with Ge atoms in the first layer. Based on these findings we conclude that the bright atoms are Ge atoms, whereas the dim atoms are Au atoms.

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

Directory of Open Access Journals (Sweden)

Yudi Darma

2008-03-01

Full Text Available Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of annealing temperature in the range of 550-800oC has been evaluated by XPS analysis and confirms the diffusion of Ge atoms from Ge core towards the Si clad accompanied by formation of GeOx at the Si clad surface. The first subband energy at the valence band of Si dot with Ge core has been measured as an energy shift at the top of the valence band density of state using XPS. The systematic shift of the valence band maximum towards higher binding energy with progressive deposition in the dot formation indicate the charging effect of dots and SiO2 layer by photoemission during measurements.

Energy dependence of CP-violation reach for monochromatic neutrino beam

Science.gov (United States)

Bernabéu, José; Espinoza, Catalina

2008-06-01

The ultimate goal of future neutrino facilities is the determination of CP violation in neutrino oscillations. Besides | U (e 3) | ≠ 0, this will require precision experiments with a very intense neutrino source and energy control. With this objective in mind, the creation of monochromatic neutrino beams from the electron capture decay of boosted ions by the SPS of CERN has been proposed. We discuss the capabilities of such a facility as a function of the energy of the boost and the baseline for the detector. We compare the physics potential for two different configurations: (I) γ = 90 and γ = 195 (maximum achievable at present SPS) to Frejus; (II) γ = 195 and γ = 440 (maximum achievable at upgraded SPS) to Canfranc. We conclude that the SPS upgrade to 1000 GeV is important to reach a better sensitivity to CP violation iff it is accompanied by a longer baseline.

Energy dependence of CP-violation reach for monochromatic neutrino beam

International Nuclear Information System (INIS)

Bernabeu, Jose; Espinoza, Catalina

2008-01-01

The ultimate goal of future neutrino facilities is the determination of CP violation in neutrino oscillations. Besides |U(e3)|≠0, this will require precision experiments with a very intense neutrino source and energy control. With this objective in mind, the creation of monochromatic neutrino beams from the electron capture decay of boosted ions by the SPS of CERN has been proposed. We discuss the capabilities of such a facility as a function of the energy of the boost and the baseline for the detector. We compare the physics potential for two different configurations: (I) γ=90 and γ=195 (maximum achievable at present SPS) to Frejus; (II) γ=195 and γ=440 (maximum achievable at upgraded SPS) to Canfranc. We conclude that the SPS upgrade to 1000 GeV is important to reach a better sensitivity to CP violation iff it is accompanied by a longer baseline

Naturalness reach of the large hadron collider in minimal supergravity

International Nuclear Information System (INIS)

Allanach, B.C.; Hetherington, J.P.J.; Parker, M.A.; Webber, B.R.

2000-01-01

We re-analyse the prospects of discovering supersymmetry at the LHC, in order to re-express coverage in terms of a fine-tuning parameter and to extend the analysis to scalar masses (m 0 ) above 2 TeV. We use minimal supergravity (mSUGRA) unification assumptions for the SUSY breaking parameters. Such high values of m 0 have recently been found to have a focus point, leading to relatively low fine-tuning. In addition, improvements in the simulations since the last study mean that this region no longer lacks radiative electroweak symmetry breaking. The best fine tuning reach is found in a mono-leptonic channel, where for μ>0, A 0 =0 and tan β=10 (corresponding to the focus point), all points in mSUGRA with m 0 0 , mSUGRA does not evade detection provided the gaugino mass parameter M 1/2 < 460 GeV. (author)

FEM for modelling 193 nm excimer laser treatment of SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub x} heterostructures on SOI substrates

Energy Technology Data Exchange (ETDEWEB)

Conde, J.C.; Chiussi, S.; Gontad, F.; Gonzalez, P. [Dpto. Fisica Aplicada, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain); Martin, E. [Dpto. de Mecanica, Maquinas, Motores Termicos y Fluidos, E.T.S.I.I. University of Vigo, Campus Universitario, Rua Maxwell s/n, 36310 Vigo (Spain)

2011-03-15

Research on epitaxial crystalline silicon (c-Si) and silicon-germanium (Si{sub 1-x}Ge{sub x}) alloys growth and annealing for microelectronic purposes, such as Micro- or Nano-Electro-Mechanical Systems (MEMS or NEMS) and Silicon-On-Nothing (SON) devices is continuously in progress. Laser assisted annealing techniques using commercial ArF Excimer Laser sources are based on ultra-rapid heating and cooling cycles induced by the 193 nm pulses of 20 ns, which are absorbed in the near surface region of the heterostructures. During and after the absorption of these laser pulses, complex physical processes appear that strongly depend on sample structure and applied laser pulse energy densities. The control of the experimental parameters is therefore a key task for obtaining high quality alloys. The Finite ElementsMethod (FEM) is a powerful tool for the optimization of such treatments, because it provides the spatial and temporal temperature fields that are produced by the laser pulses. In this work, we have used a FEM commercial software, to predict the temperatures gradients induced by ArF excimer laser over a wide energy densities range, 0.1<{phi}<0.4 J/cm{sup 2}, on different SiO{sub 2}/Si/Si{sub (1-x)}Ge{sub (x)} thin films deposited on SOI substrate. These numerical results allow us to predict the threshold energies needed to reach the melting point (MP) of the Si and SiGe alloy without oxidation of the thin films system. Therefore, it is possible to optimize the conditions to achieve high quality epitaxy films. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Azimuthal anisotropy and correlations at large transverse momenta in p + p and Au + Au collisions at square root sNN=200 GeV.

Science.gov (United States)

Adams, J; Aggarwal, M M; Ahammed, Z; Amonett, J; Anderson, B D; Arkhipkin, D; Averichev, G S; Badyal, S K; Bai, Y; Balewski, J; Barannikova, O; Barnby, L S; Baudot, J; Bekele, S; Belaga, V V; Bellwied, R; Berger, J; Bezverkhny, B I; Bharadwaj, S; Bhasin, A; Bhati, A K; Bhatia, V S; Bichsel, H; Billmeier, A; Bland, L C; Blyth, C O; Bonner, B E; Botje, M; Boucham, A; Brandin, A V; Bravar, A; Bystersky, M; Cadman, R V; Cai, X Z; Caines, H; Calderón de la Barca Sánchez, M; Carroll, J; Castillo, J; Cebra, D; Chajecki, Z; Chaloupka, P; Chattopdhyay, S; Chen, H F; Chen, Y; Cheng, J; Cherney, M; Chikanian, A; Christie, W; Coffin, J P; Cormier, T M; Cramer, J G; Crawford, H J; Das, D; Das, S; de Moura, M M; Derevschikov, A A; Didenko, L; Dietel, T; Dogra, S M; Dong, W J; Dong, X; Draper, J E; Du, F; Dubey, A K; Dunin, V B; Dunlop, J C; Dutta Mazumdar, M R; Eckardt, V; Edwards, W R; Efimov, L G; Emelianov, V; Engelage, J; Eppley, G; Erazmus, B; Estienne, M; Fachini, P; Faivre, J; Fatemi, R; Fedorisin, J; Filimonov, K; Filip, P; Finch, E; Fine, V; Fisyak, Y; Foley, K J; Fomenko, K; Fu, J; Gagliardi, C A; Gans, J; Ganti, M S; Gaudichet, L; Geurts, F; Ghazikhanian, V; Ghosh, P; Gonzalez, J E; Grachov, O; Grebenyuk, O; Grosnick, D; Guertin, S M; Guo, Y; Gupta, A; Gutierrez, T D; Hallman, T J; Hamed, A; Hardtke, D; Harris, J W; Heinz, M; Henry, T W; Hepplemann, S; Hippolyte, B; Hirsch, A; Hjort, E; Hoffmann, G W; Huang, H Z; Huang, S L; Hughes, E W; Humanic, T J; Igo, G; Ishihara, A; Jacobs, P; Jacobs, W W; Janik, M; Jiang, H; Jones, P G; Judd, E G; Kabana, S; Kang, K; Kaplan, M; Keane, D; Khodyrev, V Yu; Kiryluk, J; Kisiel, A; Kislov, E M; Klay, J; Klein, S R; Klyachko, A; Koetke, D D; Kollegger, T; Kopytine, M; Kotchenda, L; Kramer, M; Kravtsov, P; Kravtsov, V I; Krueger, K; Kuhn, C; Kulikov, A I; Kumar, A; Kunz, C L; Kutuev, R Kh; Kuznetsov, A A; Lamont, M A C; Landgraf, J M; Lange, S; Laue, F; Lauret, J; Lebedev, A; Lednicky, R; Lehocka, S; LeVine, M J; Li, C; Li, Q; Li, Y; Lindenbaum, S J; Lisa, M A; Liu, F; Liu, L; Liu, Q J; Liu, Z; Ljubicic, T; Llope, W J; Long, H; Longacre, R S; Lopez-Noriega, M; Love, W A; Lu, Y; Ludlam, T; Lynn, D; Ma, G L; Ma, J G; Ma, Y G; Magestro, D; Mahajan, S; Mahapatra, D P; Majka, R; Mangotra, L K; Manweiler, R; Margetis, S; Markert, C; Martin, L; Marx, J N; Matis, H S; Matulenko, Yu A; McClain, C J; McShane, T S; Meissner, F; Melnick, Yu; Meschanin, A; Miller, M L; Milosevich, Z; Minaev, N G; Mironov, C; Mischke, A; Mishra, D K; Mitchell, J; Mohanty, B; Molnar, L; Moore, C F; Morozov, D A; Munhoz, M G; Nandi, B K; Nayak, S K; Nayak, T K; Nelson, J M; Netrakanti, P K; Nikitin, V A; Nogach, L V; Nurushev, S B; Odyniec, G; Ogawa, A; Okorokov, V; Oldenburg, M; Olson, D; Pal, S K; Panebratsev, Y; Panitkin, S Y; Pavlinov, A I; Pawlak, T; Peitzmann, T; Perevoztchikov, V; Perkins, C; Peryt, W; Petrov, V A; Phatak, S C; Picha, R; Planinic, M; Pluta, J; Porile, N; Porter, J; Poskanzer, A M; Potekhin, M; Potrebenikova, E; Potukuchi, B V K S; Prindle, D; Pruneau, C; Putschke, J; Rai, G; Rakness, G; Raniwala, R; Raniwala, S; Ravel, O; Ray, R L; Razin, S V; Reichhold, D; Reid, J G; Renault, G; Retiere, F; Ridiger, A; Ritter, H G; Roberts, J B; Rogachevskiy, O V; Romero, J L; Rose, A; Roy, C; Ruan, L; Sahoo, R; Sakrejda, I; Salur, S; Sandweiss, J; Savin, I; Sazhin, P S; Schambach, J; Scharenberg, R P; Schmitz, N; Schroeder, L S; Schweda, K; Seger, J; Seyboth, P; Shahaliev, E; Shao, M; Shao, W; Sharma, M; Shen, W Q; Shestermanov, K E; Shimanskiy, S S; Sichtermann, E; Simon, F; Singaraju, R N; Skoro, G; Smirnov, N; Snellings, R; Sood, G; Sorensen, P; Sowinski, J; Speltz, J; Spinka, H M; Srivastava, B; Stadnik, A; Stanislaus, T D S; Stock, R; Stolpovsky, A; Strikhanov, M; Stringfellow, B; Suaide, A A P; Sugarbaker, E; Suire, C; Sumbera, M; Surrow, B; Symons, T J M; Szanto de Toledo, A; Szarwas, P; Tai, A; Takahashi, J; Tang, A H; Tarnowsky, T; Thein, D; Thomas, J H; Timoshenko, S; Tokarev, M; Trentalange, S; Tribble, R E; Tsai, O D; Ulery, J; Ullrich, T; Underwood, D G; Urkinbaev, A; Van Buren, G; van Leeuwen, M; Vander Molen, A M; Varma, R; Vasilevski, I M; Vasiliev, A N; Vernet, R; Vigdor, S E; Viyogi, Y P; Vokal, S; Voloshin, S A; Vznuzdaev, M; Waggoner, W T; Wang, F; Wang, G; Wang, G; Wang, X L; Wang, Y; Wang, Y; Wang, Z M; Ward, H; Watson, J W; Webb, J C; Wells, R; Westfall, G D; Wetzler, A; Whitten, C; Wieman, H; Wissink, S W; Witt, R; Wood, J; Wu, J; Xu, N; Xu, Z; Xu, Z Z; Yamamoto, E; Yepes, P; Yurevich, V I; Zanevsky, Y V; Zhang, H; Zhang, W M; Zhang, Z P; Zolnierczuk, P A; Zoulkarneev, R; Zoulkarneeva, Y; Zubarev, A N

2004-12-17

Results on high transverse momentum charged particle emission with respect to the reaction plane are presented for Au + Au collisions at square root s(NN)=200 GeV. Two- and four-particle correlations results are presented as well as a comparison of azimuthal correlations in Au + Au collisions to those in p + p at the same energy. The elliptic anisotropy v(2) is found to reach its maximum at p(t) approximately 3 GeV/c, then decrease slowly and remain significant up to p(t) approximately 7-10 GeV/c. Stronger suppression is found in the back-to-back high-p(t) particle correlations for particles emitted out of plane compared to those emitted in plane. The centrality dependence of v(2) at intermediate p(t) is compared to simple models based on jet quenching.

Interplay between magnetic quantum criticality, Fermi surface and unconventional superconductivity in UCoGe, URhGe and URu2Si2

International Nuclear Information System (INIS)

Bastien, Gael

2017-01-01

This thesis is concentrated on the ferromagnetic superconductors UCoGe and URhGe and on the hidden order state in URu 2 Si 2 . In the first part the pressure temperature phase diagram of UCoGe was studied up to 10.5 GPa. Ferromagnetism vanishes at the critical pressure pc≅1 GPa. Unconventional superconductivity and non Fermi liquid behavior can be observed in a broad pressure range around pc. The superconducting upper critical field properties were explained by the suppression of the magnetic fluctuations under field. In the second part the Fermi surfaces of UCoGe and URhGe were investigated by quantum oscillations. In UCoGe four Fermi surface pockets were observed. Under magnetic field successive Lifshitz transitions of the Fermi surface have been detected. The observed Fermi surface pockets in UCoGe evolve smoothly with pressure up to 2.5 GPa and do not show any Fermi surface reconstruction at the critical pressure pc. In URhGe, three heavy Fermi surface pockets were detected by quantum oscillations. In the last part the quantum oscillation study in the hidden order state of URu 2 Si 2 shows a strong g factor anisotropy for two Fermi surface pockets, which is compared to the macroscopic g factor anisotropy extracted from the upper critical field study. (author) [fr

First results for the two-spin parameter A sub LL in. pi. sup 0 production by 200 GeV polarized protons and antiprotons

Energy Technology Data Exchange (ETDEWEB)

Adams, D L; Corcoran, M D; Cranshaw, J; Nessi-Tedaldi, F; Nessi, M; Nguyen, C; Roberts, J B; Skeens, J; White, J L [Rice Univ., Houston, TX (USA). Bonner Nuclear Labs.; Akchurin, N; Onel, Y [Iowa Univ., Iowa City (USA). Dept. of Physics and Astronomy; Belikov, N I; Derevschikov, A A; Grachov, O A; Matulenko, Yu A; Meschanin, A P; Nurushev, S B; Patalakha, D I; Rykov, V L; Solovyanov, V L; Vasiliev, A N [Institut Fiziki Vysokikh Ehnergij, Serpukhov (USSR); Bystricky, J; Chaumette, P; Deregel, J; Durand, G; Fabre, J; Lehar, F; Lesquen, A de [CEA Centre d' Etudes Nucleaires de Saclay, 91 - Gif-sur-Yvette (France); Cossairt, J D; Read, A L [Fermi National Accelerator Lab., Batavia, IL (USA); En' yo, H; Funahashi, H; Goto, Y; Imai, K; Itow, Y; Makino, S; Masaike, A; Miyake, K; Nagamine, T; Saito, N; Yamashita, S [Kyoto Univ. (Japan). Dept. of Physics; Fukuda, K [Meiji Coll. of Oriental Medicine, Kyoto (Japan); Grosnick, D P; Hill, D A; FNAL E581/704 Collaboration

1991-05-23

The two-spin parameter A{sub LL} in inclusive {pi}{sup 0} production by longitudinally-polarized protons and antiprotons on a longitudinally-polarized proton target has been measured at the 200 GeV Fermilab spin physics facility, for {pi}{sup 0}'s at x{sub F} = 0 with 1 {le} p{sub t} {le} 3 GeV/c. The results exclude, at the 95% confidence level, values of A{sub LL} (pp) > 0.1 and < -0.1, for {pi}{sup 0}'s produced by protons, and values of A{sub LL} (anti pp) > 0.1 and < -0.2 for incident antiprotons. The relevance of A{sub LL}(pp) for the gluon spin density is discussed. The data are in good agreement with 'conventional' small or zero, gluon polarization. (orig.).

Inclusive production of charged pions in p+C collisions at 158 GeV/c beam momentum

CERN Document Server

Alt, C; Barna, D; Barr, G; Bartke, Jerzy; Betev, L; Biakowska, H; Blume, C; Boimska, B; Bracinik, J; Bramm, R; Buncic, P; Cerny, V; Christakoglou, P; Chvala, O; Dinkelaker, P; Dolejsi, J; Eckardt, V; Fischer, H G; Flierl, D; Fodor, Z; Foka, P; Friese, V; Gazdzicki, M; Georgopoulos, G; Höhne, C; Karev, A; Kniege, S; Kollegger, T; Kolesnikov, V I; Kornas, E; Kowalski, M; Kraus, I; Kreps, M; Litov, L; Makariev, M; Malakhov, A I; Mateev, M; Melkumov, G L; Mitrovski, M; Pálla, G; Panagiotou, A D; Panayotov, D; Pattison, C; Petridis, A; Renfordt, R; Rybicki, A; Sandoval, A; Schmitz, N; Seyboth, P; Siklér, F; Stock, R; Ströbele, H; Sziklai, J; Szymanski, P; Trubnikov, V; Varga, D; Vassiliou, Maria; Veres, G I; Vesztergombi, G; Vranic, D; Wenig, S; Wetzler, A; Zaranek, J

2007-01-01

The production of charged pions in minimum bias p+C interactions is studied using a sample of 377000 inelastic events obtained with the NA49 detector at the CERN SPS at 158 GeV/c beam momentum. The data cover a phase space area ranging from 0 to 1.8 GeV/c in transverse momentum and from -0.1 to 0.5 in Feynman x. Inclusive invariant cross sections are given on a grid of 270 bins per charge thus offering for the first time a dense coverage of the projectile hemisphere and of the cross-over region into the target fragmentation zone.

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

International Nuclear Information System (INIS)

Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

2011-01-01

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

Science.gov (United States)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Photoemission Studies of Si Quantum Dots with Ge Core: Dots formation, Intermixing at Si-clad/Ge-core interface and Quantum Confinement Effect

OpenAIRE

Yudi Darma

2008-01-01

Spherical Si nanocrystallites with Ge core (~20nm in average dot diameter) have been prepared by controlling selective growth conditions of low-pressure chemical vapor deposition (LPCVD) on ultrathin SiO2 using alternately pure SiH4 and 5% GeH4 diluted with He. XPS results confirm the highly selective growth of Ge on the pregrown Si dots and subsequently complete coverage by Si selective growth on Ge/Si dots. Compositional mixing and the crystallinity of Si dots with Ge core as a function of ...

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Science.gov (United States)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-05-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

International Nuclear Information System (INIS)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

2015-01-01

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

Energy Technology Data Exchange (ETDEWEB)

Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Strachan, Alejandro, E-mail: strachan@purdue.edu [School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States)

2015-05-07

We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

Scattering of 7-GeV muons in nuclei

International Nuclear Information System (INIS)

May, M.; Aslanides, E.; Lederman, L.M.; Limon, P.; Rapp, P.; Entenberg, A.; Jostlein, H.; Kim, I.J.; Konigsman, K.; Kostoulas, I.G.; Melissinos, A.C.; Gittleson, H.; Kirk, T.; Murtagh, M.; Tannenbaum, M.J.; Sculli, J.; White, T.; Yamanouchi, T.

1975-01-01

We have measured the inclusive scattering of muons of average energy 7.2 GeV from a variety of nuclear targets in the four-momentum-transfer range 0.6 2 2 . We find that the data can be well represented as an incoherent sum of muon-proton and muon-neutron scattering except in the region x (equivalent1/ω=Q 2 /2mν) <0.1 A fit in this region by the form A)=sigma/subA//(Z/A) sigma/subp/+(N/A) sigma/subn/=A/sup rho/ yields a value of the exponent rho of 0.963plus-or-minus0.006

Direct measurement of the magnetocaloric effect in Tb5Si2Ge2

International Nuclear Information System (INIS)

Tocado, L.; Palacios, E.; Burriel, R.

2005-01-01

A method for measuring the adiabatic temperature change ΔT S upon quasi-static application of an external magnetic field H is proposed. ΔT S is directly measured with an accuracy better than 0.01K. Results of experiments on the giant magnetocaloric compound Tb 5 Si 2 Ge 2 are compared with those obtained from magnetization and heat capacity in an applied field

Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.

Science.gov (United States)

Rouifed, Mohamed Said; Chaisakul, Papichaya; Marris-Morini, Delphine; Frigerio, Jacopo; Isella, Giovanni; Chrastina, Daniel; Edmond, Samson; Le Roux, Xavier; Coudevylle, Jean-René; Vivien, Laurent

2012-10-01

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

Toepassing geïntegreerde maatregelen geïnvestariseerd

NARCIS (Netherlands)

Heijne, B.

2009-01-01

Kennis over 'good practices' en 'best practices' van geïntegreerde bedrijfsstrategieën verspreidt zich snel over Europa. Dat is één van de conclusies van een inventarisatie binnen het project Endure. Het aanplanten van minder vatbare of resistente rassen blijkt weinig toegepast te worden in de

Study of charged-current ep interactions at Q2 > 200 GeV2 with the ZEUS detector at HERA

International Nuclear Information System (INIS)

Derrick, M.; Krakauer, D.; Magill, S.

1996-06-01

Deep inelastic charged-current reactions have been studied in e + p and e - p collisions at a center of mass energy of about 300 GeV in the kinematic region Q 2 >200 GeV 2 and x>0.006 using the ZEUS detector at HERA. The integrated cross sections for Q 2 >200 GeV 2 are found to be σ e + p→ anti νX =30.3 -4.2-2.6 +5.5+1.6 pb and σ e - p→νX =54.7 -9.8-3.4 +15.9+2.8 pb. Differential cross sections have been measured as functions of the variables x, y and Q 2 . From the measured differential cross sections dσ/dQ 2 , the W boson mass is determined to be M W =79 -7-4 +8+4 GeV. Measured jet rates and transverse energy profiles agree with model predictions. A search for charged-current interactions with a large rapidity gap yielded one candidate event, corresponding to a cross section σ e + p→ anti νX (Q 2 >200 GeV 2 ; η max -0.7 +1.8 ±0.1 pb. (orig.)

Apparent oxygen utilization rates calculated from tritium and helium-3 profiles at the Bermuda Atlantic Time-series Study site

Directory of Open Access Journals (Sweden)

R. H. R. Stanley

2012-06-01

Full Text Available We present three years of Apparent Oxygen Utilization Rates (AOUR estimated from oxygen and tracer data collected over the ocean thermocline at monthly resolution between 2003 and 2006 at the Bermuda Atlantic Time-series Study (BATS site. We estimate water ages by calculating a transit time distribution from tritium and helium-3 data. The vertically integrated AOUR over the upper 500 m, which is a regional estimate of export, during the three years is 3.1 ± 0.5 mol O₂ m⁻² yr⁻¹. This is comparable to previous AOUR-based estimates of export production at the BATS site but is several times larger than export estimates derived from sediment traps or ²³⁴Th fluxes. We compare AOUR determined in this study to AOUR measured in the 1980s and show AOUR is significantly greater today than decades earlier because of changes in AOU, rather than changes in ventilation rates. The changes in AOU are likely a methodological artefact associated with problems with early oxygen measurements.

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

Science.gov (United States)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Propagation of GeV neutrinos through Earth

Science.gov (United States)

Olivas, Yaithd Daniel; Sahu, Sarira

2018-06-01

We have studied the Earth matter effect on the oscillation of upward going GeV neutrinos by taking into account the three active neutrino flavors. For neutrino energy in the range 3 to 12 GeV we observed three distinct resonant peaks for the oscillation process νe ↔νμ,τ in three distinct densities. However, according to the most realistic density profile of the Earth, the second peak at neutrino energy 6.18 GeV corresponding to the density 6.6 g/cm3 does not exist. So the resonance at this energy can not be of MSW-type. For the calculation of observed flux of these GeV neutrinos on Earth, we considered two different flux ratios at the source, the standard scenario with the flux ratio 1 : 2 : 0 and the muon damped scenario with 0 : 1 : 0. It is observed that at the detector while the standard scenario gives the observed flux ratio 1 : 1 : 1, the muon damped scenario has a different ratio. For muon damped case with Eν 20 GeV, we get the average Φνe ∼ 0 and Φνμ ≃Φντ ≃ 0.45. The upcoming PINGU will be able to shed more light on the nature of the resonance in these GeV neutrinos and hopefully will also be able to discriminate among different processes of neutrino production at the source in GeV energy range.

Origin of structural analogies and differences between the atomic structures of GeSe4 and GeS4 glasses: A first principles study.

Science.gov (United States)

Bouzid, Assil; Le Roux, Sébastien; Ori, Guido; Boero, Mauro; Massobrio, Carlo

2015-07-21

First-principles molecular dynamics simulations based on density functional theory are employed for a comparative study of structural and bonding properties of two stoichiometrically identical chalcogenide glasses, GeSe4 and GeS4. Two periodic cells of 120 and 480 atoms are adopted. Both glasses feature a coexistence of Ge-centered tetrahedra and Se(S) homopolar connections. Results obtained for N = 480 indicate substantial differences at the level of the Se(S) environment, since Ge-Se-Se connections are more frequent than the corresponding Ge-S-S ones. The presence of a more prominent first sharp diffraction peak in the total neutron structure factor of glassy GeS4 is rationalized in terms of a higher number of large size rings, accounting for extended Ge-Se correlations. Both the electronic density of states and appropriate electronic localization tools provide evidence of a higher ionic character of Ge-S bonds when compared to Ge-Se bonds. An interesting byproduct of these investigations is the occurrence of discernible size effects that affect structural motifs involving next nearest neighbor distances, when 120 or 480 atoms are used.

Behaviour of the ZEUS uranium-scintillator calorimeter for low-energetic particles with energies of 0.2 - 10.0 GeV

International Nuclear Information System (INIS)

Fuertjes, A.

1990-02-01

A prototype for the high-resolution calorimeter (FCAL) of the ZEUS detector was tested at a test beam of the CERN PS for beam momenta between 0.5 GeV/c and 10.0 GeV/c. The response of the calorimeter to low-energetic electrons, positrons, pions of both polarities, and protons should be studied. Additionally the effect of dead matter in front of the calorimeter was experimentally studied. Following results could be determined: Electrons and Positrons of equal energy produce comparable signals in the detector. Their response is in the considered momentum range with an accuracy of below 1% linear. The energy resolution of the calorimeter for electrons and positrons in the studied energy interval amounts to 17.5%√E. The response of the calorimeter to π + and π - is similar down to momenta of 0.5 GeV/c. The e/π ratio reaches the value 1.0 for energies above 2 GeV. For small incident energies e/mip=0.62 result. The energy resolution for pions amounts for energies above 2 GeV about 34%/√E. For smaller particle energies improvements can be observed. Protons show an identical behaviour as the pions, if the interesting quantities are considered in dependence on their kinetic energy. Dead matter in the front of the calorimeter influences the particle signals of low-energetic positrons and pions. The pulse-height spectra of electrons remain symmetric, but shift to small values. This behaviour could be confirmed by Monte-Carlo calculations. Pions show a distribution becoming with increasing matter density more asymmetric. At energies up to 2 GeV a significant effect mean values, energy resolution, and e/h ratio can be recognized. Above 2 GeV no important nuisance of the response to positrons and pions can yet be observed. (orig.) [de

Stress evolution of Ge nanocrystals in dielectric matrices

Science.gov (United States)

Bahariqushchi, Rahim; Raciti, Rosario; Emre Kasapoğlu, Ahmet; Gür, Emre; Sezen, Meltem; Kalay, Eren; Mirabella, Salvatore; Aydinli, A.

2018-05-01

Germanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.

Large-xF spin asymmetry in π0 production by 200-GeV polarized protons

International Nuclear Information System (INIS)

Adams, D.L.; Corcoran, M.D.; Cranshaw, J.; Nessi-Tedaldi, F.; Nessi, M.; Nguyen, C.; Roberts, J.B.; Skeens, J.; White, J.L.; Bystricky, J.; Lehar, F.; Lesquen, A. de; Cossairt, J.D.; Read, A.L.; En'yo, H.; Funahashi, H.; Goto, Y.; Imai, K.; Itow, Y.; Makino, S.; Masaike, A.; Miyake, K.; Nagamine, T.; Saito, N.; Yamashita, S.; Iwatani, K.; Krueger, K.W.; Kuroda, K.; Michalowicz, A.; Luehring, F.C.; Miller, D.H.; Pauletta, G.; Penzo, A.; Schiavon, P.; Zanetti, A.; Salvato, G.; Villari, A.; Takeutchi, F.; Tamura, N.; Tanaka, N.; Yoshida, T.

1992-01-01

The spin asymmetry A N for inclusive π 0 production by 200-GeV transversely-polarized protons on a liquid hydrogen target has been measured at Fermilab over a wide range of x F , with 0.5 T F >0.3, the asymmetry rises with increasing x F and reaches a value of A N =0.15±0.03 in the region 0.6 F <0.8. This result provides new input regarding the question of the internal spin structure of transversely-polarized protons. (orig.)

Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation

International Nuclear Information System (INIS)

Bolkhovityanov, Yu B; Sokolov, L V

2012-01-01

Pure edge 90° misfit dislocations (MDs) are the most effective linear defects that combine the substrate and the film with different lattice parameters. A system consisting of a nonstressed film and a substrate approaches the perfect case in terms of the structural transition from one lattice parameter to the other if imperfections in the form of an ordered network of edge MDs are located exclusively at the interface, while threading dislocations are practically absent. The path to this perfect case goes through studying the possibilities of creating such an ordered network of edge MDs. The mechanism of formation of edge MDs proposed previously by Kvam et al (1990 J. Mater. Res. 5 1900) is discussed. This mechanism involves induced formation of a complementary pair of 60° MDs whose coalescence at the interface creates an edge MD. Some publications are presented, which demonstrate on the basis of experimental data that this mechanism under certain conditions can be the basic mechanism responsible for plastic relaxation of Ge-on-Si films. A cardinal method for decreasing the number of defects at the initial stages of growth of Ge/Si heterosystems is a set of procedures that allow a specified number of MDs to be inserted into the stressed film earlier than conditions of spontaneous nucleation of MDs from the film surface in the 2D–3D transition occur. When the low-temperature/high-temperature strategy of growth is used, the low-temperature GeSi seed layer tuned with respect to the growth temperature, composition and thickness can serve as a source of 60° dislocations, which facilitate earlier formation of edge MDs at the initial stage of plastic relaxation of the GeSi or Ge main layer. Results of some recent publications that report reaching high structural perfection of thin (∼1 µm and less) Ge-on-Si films are discussed. The proposed explanation of these results is based on postulates of controlled insertion of MDs and formation of edge MDs by the model of

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Dimers at Ge/Si(001) surfaces: Ge coverage dependent quenching, reactivation of flip-flop motion, and interaction with dimer vacancy lines

International Nuclear Information System (INIS)

Hirayama, H.; Mizuno, H.; Yoshida, R.

2002-01-01

We studied Ge coverage (θ Ge ) dependent quenching, reactivation of the flip-flop motion, and interaction with dimer vacancy lines (DVLs) of dimers on Ge/Si(001) surfaces using a scanning tunneling microscope (STM) combined with a molecular beam epitaxy apparatus. Deposition of ∼0.3 ML (monolayer) Ge quenched the flip-flop motion, making all dimers asymmetric. Further deposition introduced DVLs at θ Ge ≥∼0.5 ML, and symmetric dimer domains appeared again locally at θ≥1.5 ML. High-resolution STM images indicated that asymmetric dimer rows always invert their phase in alternation with buckled dimer's up-end at the DVLs. Low-temperature STM images indicated that the symmetric dimer domains were due to flip-flopping of asymmetric dimers activated by large θ Ge at room temperature. The symmetric dimer domains extended along the dimer rows over the DVLs due to the phase correlation

SiGe HBTs Optimization for Wireless Power Amplifier Applications

Directory of Open Access Journals (Sweden)

Pierre-Marie Mans

2010-01-01

Full Text Available This paper deals with SiGe HBTs optimization for power amplifier applications dedicated to wireless communications. In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics. Furthermore, a new trapezoidal base Germanium (Ge profile is proposed. Thanks to this profile, precise control of Ge content at the metallurgical emitter-base junction is obtained. Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent. Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile is conducted in order to improve the fT values at high injection levels.

Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions

Energy Technology Data Exchange (ETDEWEB)

Chen, Wei-Ni [Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Jiang, Shiuh-Jen, E-mail: sjjiang@faculty.nsysu.edu.tw [Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Department of Medical Laboratory Science and Biotechnology, Kaohsiung Medical University, Kaohsiung 80708, Taiwan (China); Chen, Yen-Ling [Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, Kaohsiung 80708, Taiwan (China); Sahayam, A.C. [National Centre for Compositional Characterisation of Materials (CCCM), Hyderabad (India)

2015-02-20

Highlights: • Determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions in a single run. • Accurate analysis using isotope dilution and standard addition methods. • Vapor generation ICP-MS yielded superior detection limits compared to ETV-ICP-MS. • No sample dissolution increased sample through put. • Analysis of GBW09305 Cosmetic (Cream) reference material for accuracy. - Abstract: A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v L-cysteine, 0.5 μg mL{sup −1} Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng g{sup −1} for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample.

Slurry sampling flow injection chemical vapor generation inductively coupled plasma mass spectrometry for the determination of trace Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions

International Nuclear Information System (INIS)

Chen, Wei-Ni; Jiang, Shiuh-Jen; Chen, Yen-Ling; Sahayam, A.C.

2015-01-01

Highlights: • Determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions in a single run. • Accurate analysis using isotope dilution and standard addition methods. • Vapor generation ICP-MS yielded superior detection limits compared to ETV-ICP-MS. • No sample dissolution increased sample through put. • Analysis of GBW09305 Cosmetic (Cream) reference material for accuracy. - Abstract: A slurry sampling inductively coupled plasma mass spectrometry (ICP-MS) method has been developed for the determination of Ge, As, Cd, Sb, Hg and Bi in cosmetic lotions using flow injection (FI) vapor generation (VG) as the sample introduction system. A slurry containing 2% m/v lotion, 2% m/v thiourea, 0.05% m/v L-cysteine, 0.5 μg mL −1 Co(II), 0.1% m/v Triton X-100 and 1.2% v/v HCl was injected into a VG-ICP-MS system for the determination of Ge, As, Cd, Sb, Hg and Bi without dissolution and mineralization. Because the sensitivities of the analytes in the slurry and that of aqueous solution were quite different, an isotope dilution method and a standard addition method were used for the determination. This method has been validated by the determination of Ge, As, Cd, Sb, Hg and Bi in GBW09305 Cosmetic (Cream) reference material. The method was also applied for the determination of Ge, As, Cd, Sb, Hg and Bi in three cosmetic lotion samples obtained locally. The analysis results of the reference material agreed with the certified value and/or ETV-ICP-MS results. The detection limit estimated from the standard addition curve was 0.025, 0.1, 0.2, 0.1, 0.15, and 0.03 ng g −1 for Ge, As, Cd, Sb, Hg and Bi, respectively, in original cosmetic lotion sample

Rapidity and kT dependence of HBT correlations in Au+Au collisions at 200 GeV with PHOBOS

Science.gov (United States)

Holzman, Burt; the PHOBOS Collaboration; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; McLeod, D.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sagerer, J.; Sarin, P.; Sawicki, P.; Skulski, W.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tang, J.-L.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2004-08-01

Two-particle correlations of identical charged pion pairs from Au+Au collisions at \\sqrt{s_NN} = 200 GeV were measured by the PHOBOS experiment at RHIC. Data for the most central (0-15%) events were analysed with Bertsch-Pratt (BP) and Yano-Koonin-Podgoretskii (YKP) parametrizations using pairs with rapidities of 0.4 < y < 1.3 and transverse momenta 0.1 < kT < 1.4 GeV/c. The Bertsch-Pratt radii decrease as a function of pair transverse momentum. The pair rapidity Yππ roughly scales with the source rapidity YYKP, indicating strong dynamical correlations.

P/N InP solar cells on Ge wafers

Science.gov (United States)

Wojtczuk, Steven; Vernon, Stanley; Burke, Edward A.

1994-01-01

Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented

Growth of Ge films by cluster beam deposition

CERN Document Server

Xu, J L; Feng, J Y

2002-01-01

Ge epitaxial layers with reasonable quality were grown on the Si(1 1 1) substrates by cluster beam deposition (CBD) process. The growth temperature plays a dominant role in the epitaxial growth of Ge films. The substrate temperature for epitaxial growth is about 500 deg. C, which is lower than the reported critical temperature of Ge epitaxial growth by MBE and CVD. A stress induced phase transition of Ge lattice from cubic to tetragonal is also observed in the CBD process, and the mechanism is discussed.

XAFS study of GeO sub 2 glass under pressure

CERN Document Server

Ohtaka, O; Fukui, H; Murai, K; Okube, M; Takebe, H; Katayama, Y; Utsumi, W

2002-01-01

Using a large-volume high-pressure apparatus, Li sub 2 O-4GeO sub 2 glass and pure GeO sub 2 gel have been compressed to 14 GPa at room temperature and their local structural changes have been investigated by an in situ XAFS (x-ray absorption fine-structure) method. On compression of Li sub 2 O-4GeO sub 2 glass, the Ge-O distance gradually becomes short below 7 GPa, showing the conventional compression of the GeO sub 4 tetrahedron. Abrupt increase in the Ge-O distance occurs between 8 and 10 GPa, which corresponds to the coordination number (CN) changing from 4 to 6. The CN change is completed at 10 GPa. On decompression, the reverse transition occurs gradually below 10 GPa. In contrast to the case for Li sub 2 O-4GeO sub 2 glass, the Ge-O distance in GeO sub 2 gel gradually increases over a pressure range from 2 to 12 GPa, indicating that continuous change in CN occurs. The Ge-O distance at 12 GPa is shorter than that of Li-4GeO sub 2 indicating that the change in CN is not completed even at this pressure. O...

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

KAUST Repository

Liu, E. K.; Zhang, H. G.; Xu, G. Z.; Zhang, X. M.; Ma, R. S.; Wang, W. H.; Chen, J. L.; Zhang, H. W.; Wu, G. H.; Feng, L.; Zhang, Xixiang

2013-01-01

An effective scheme of isostructural alloying was applied to establish a Curie-temperature window in isostructural MnNiGe-CoNiGe system. With the simultaneous accomplishment of decreasing structural-transition temperature and converting

Ferro electrical properties of GeSbTe thin films; Propiedades ferroelectricas de peliculas delgadas de GeSbTe

Energy Technology Data Exchange (ETDEWEB)

Gervacio A, J. J.; Prokhorov, E.; Espinoza B, F. J., E-mail: jgervacio@qro.cinvestav.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Juriquilla, 76230 Queretaro (Mexico)

2011-07-01

The aim of this work is to investigate and compare ferro electrical properties of thin GeSbTe films with composition Ge{sub 4}Sb{sub 1}Te{sub 5} (with well defined ferro electrical properties) and Ge{sub 2}Sb{sub 2}Te{sub 5} using impedance, optical reflection, XRD, DSc and Piezo response Force Microscopy techniques. The temperature dependence of the capacitance in both materials shows an abrupt change at the temperature corresponding to ferroelectric-paraelectric transition and the Curie-Weiss dependence. In Ge{sub 2}Sb{sub 2}Te{sub 5} films this transition corresponds to the end from a NaCl-type to a hexagonal transformation. Piezo response Force Microscopy measurements found ferroelectric domains with dimension approximately equal to the dimension of grains. (Author)

Missing mass spectra in pp inelastic scattering at total energies of 23 GeV and 31 GeV

CERN Document Server

Albrow, M G; Barber, D P; Bogaerts, A; Bosnjakovic, B; Brooks, J R; Clegg, A B; Erné, F C; Gee, C N P; Locke, D H; Loebinger, F K; Murphy, P G; Rudge, A; Sens, Johannes C; Van der Veen, F

1974-01-01

Results are reported of measurements of the momentum spectra of protons emitted at small angles in inelastic reactions at the CERN ISR. The data are for total energies s/sup 1///sub 2/ of 23 GeV and 31 GeV. The structure of the peak at low values of the missing mass M (of the system recoiling against the observed proton) is studied. The missing mass distributions have the form (M/sup 2/)-/sup B(t)/ where t is the four-momentum transfer squared. B(t) drops from 0.98+or-0.06 at t=-0.15 GeV/sup 2/ to 0.20+or-0.15 at t=-1.65 GeV/sup 2/. The results are compared with a simple triple-Regge formula. (12 refs).

Slow running of the gradient flow coupling from 200 MeV to 4 GeV in Nf=3 QCD

International Nuclear Information System (INIS)

Dalla Brida, Mattia; Fritzsch, Patrick; Korzec, Tomasz; Ramos, Alberto; Sint, Stefan; Sommer, Rainer; Humboldt Univ., Berlin

2016-07-01

Using a finite volume Gradient Flow (GF) renormalization scheme with Schroedinger Functional (SF) boundary conditions, we compute the non-perturbative running coupling in the range 2.2reach our high accuracy. The running of the coupling is always between one-loop and two-loop and very close to one-loop in the region of 200 MeVGeV. While there is no convincing contact to two-loop running, we match non-perturbatively to the SF coupling with background field. In this case we know the μ dependence up to ∝100 GeV and can thus connect to the Λ-parameter.

76 FR 22017 - Implementation of the Understandings Reached at the 2010 Australia Group (AG) Plenary Meeting and...

Science.gov (United States)

2011-04-20

...-01] RIN 0694-AF04 Implementation of the Understandings Reached at the 2010 Australia Group (AG... understandings reached at the June 2010 plenary meeting of the Australia Group (AG) and to make certain AG... reached at the annual plenary meeting of the Australia Group (AG) that was held in Paris, France, from May...

Pressure effects in the giant magnetocaloric compounds Gd5(SixGe1-x)4

International Nuclear Information System (INIS)

Morellon, L; Arnold, Z; Algarabel, P A; Magen, C; Ibarra, M R; Skorokhod, Y

2004-01-01

We report a study of the effect of hydrostatic pressure up to 9 kbar on selected compounds of the Gd 5 (Si x Ge 1-x ) 4 series (x = 0.8, 0.45, 0.1) by means of ac magnetic susceptibility, compressibility, and linear thermal expansion measurements. The pressure-induced increase of the transition temperatures at the second-order boundaries of the phase diagram is rather moderate: dT C /dP ∼ +0.3Kk-bar -1 (x = 0.8) and dT N /P ∼+0.7Kkbar -1 (x = 0.1). This effect is stronger in the 0 C /dP ∼ +3 Kk-bar -1 (x = 0.45,0.1), indicating that the ferromagnetic ordering can be simultaneously driven through a pressure-induced structural transformation. The values of d lnT C /d lnV calculated with the use of the measured value of compressibility (k ∼1.8 M-bar -1 ) are significantly lower than those estimated from the concentration dependence of the lattice cell volume, thus demonstrating that the dependence of the transition temperatures upon changing the Si/Ge ratio across the series cannot be explained by a pure volume effect

Double Beta Decay with Ge-detectors - and the future of Double Beta and Dark Matter Search (GENIUS)

International Nuclear Information System (INIS)

Klapdor-Kleingrothaus, H.V.

1999-01-01

Nuclear double beta decay provides an extraordinarily broad potential to search for beyond Standard Model physics, probing already now the TeV scale, on which new physics should manifest itself. These possibilities are reviewed here. First, the results of present generation experiments are presented. The most sensitive one of them - the Heidelberg-Moscow experiment in the Gran Sasso, using enriched 76 Ge - probes the electron neutrino mass now in the sub eV region and will reach a limit of ∼ 0.1 eV in a few years. Basing to a large extent on the theoretical work of the Heidelberg Double Beta Group in the last two years, results are obtained also for SUSY models (R-parity breaking, sneutrino mass), leptoquarks (leptoquark-Higgs coupling), compositeness, right-handed W boson mass and others. These results are comfortably competitive to corresponding results from high-energy accelerators like TEVATRON, HERA, etc. Second, future perspectives of ββ research are discussed. A new Heidelberg experimental proposal (GENIUS) is presented which would allow to increase the sensitivity for Majorana neutrino masses from the present level of at best 0.1 eV down to 0.01 or even 0.001 eV. Its physical potential would be a breakthrough into the multi-TeV range for many beyond standard models. Its sensitivity for neutrino oscillation parameters would be larger than of all present terrestrial neutrino oscillation experiments and of those planned for the future. It would further, already in a first step, cover almost the full MSSM parameter space for prediction of neutralinos as cold dark matter, making the experiment competitive to LHC in the search for supersymmetry

GeSn-on-insulator substrate formed by direct wafer bonding

Energy Technology Data Exchange (ETDEWEB)

Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Lee, Kwang Hong; Wang, Bing [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); Bao, Shuyu [Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Tan, Chuan Seng [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2016-07-11

GeSn-on-insulator (GeSnOI) on Silicon (Si) substrate was realized using direct wafer bonding technique. This process involves the growth of Ge{sub 1-x}Sn{sub x} layer on a first Si (001) substrate (donor wafer) followed by the deposition of SiO{sub 2} on Ge{sub 1-x}Sn{sub x}, the bonding of the donor wafer to a second Si (001) substrate (handle wafer), and removal of the Si donor wafer. The GeSnOI material quality is investigated using high-resolution transmission electron microscopy, high-resolution X-ray diffraction (HRXRD), atomic-force microscopy, Raman spectroscopy, and spectroscopic ellipsometry. The Ge{sub 1-x}Sn{sub x} layer on GeSnOI substrate has a surface roughness of 1.90 nm, which is higher than that of the original Ge{sub 1-x}Sn{sub x} epilayer before transfer (surface roughness is 0.528 nm). The compressive strain of the Ge{sub 1-x}Sn{sub x} film in the GeSnOI is as low as 0.10% as confirmed using HRXRD and Raman spectroscopy.

Search for excited leptons at 130-140 GeV

Science.gov (United States)

Buskulic, D.; de Bonis, I.; Decamp, D.; Ghez, P.; Goy, C.; Lees, J.-P.; Lucotte, A.; Minard, M.-N.; Nief, J.-Y.; Odier, P.; Pietrzyk, B.; Casado, M. P.; Chmeissani, M.; Crespo, J. M.; Delfino, M.; Efthymiopoulos, I.; Fernandez, E.; Fernandez-Bosman, M.; Garrido, Ll.; Juste, A.; Martinez, M.; Orteu, S.; Padilla, C.; Park, I. C.; Pascual, A.; Perlas, J. A.; Riu, I.; Sanchez, F.; Teubert, F.; Colaleo, A.; Creanza, D.; de Palma, M.; Gelao, G.; Girone, M.; Iaselli, G.; Maggi, G.; Maggi, M.; Marinelli, N.; Nuzzo, S.; Ranieri, A.; Raso, G.; Ruggieri, F.; Selvaggi, G.; Silvestris, L.; Tempesta, P.; Zito, G.; Huang, X.; Lin, J.; Ouyang, Q.; Wang, T.; Xie, Y.; Xu, R.; Xue, S.; Zhang, J.; Zhang, L.; Zhao, W.; Alemany, R.; Bazarko, A. O.; Cattaneo, M.; Comas, P.; Coyle, P.; Drevermann, H.; Forty, R. W.; Frank, M.; Hagelberg, R.; Harvey, J.; Janot, P.; Jost, B.; Kneringer, E.; Knobloch, J.; Lehraus, I.; Lutters, G.; Martin, E. B.; Mato, P.; Minten, A.; Miquel, R.; Mir, Ll. M.; Moneta, L.; Oest, T.; Pacheco, A.; Pusztaszeri, J.-F.; Ranjard, F.; Rensing, P.; Rolandi, L.; Schlatter, D.; Schmelling, M.; Schmitt, M.; Schneider, O.; Tejessy, W.; Tomalin, I. R.; Venturi, A.; Wachsmuth, H.; Wagner, A.; Ajaltouni, Z.; Barrès, A.; Boyer, C.; Falvard, A.; Gay, P.; Guicheney, C.; Henrard, P.; Jousset, J.; Michel, B.; Monteil, S.; Montret, J.-C.; Pallin, D.; Perret, P.; Podlyski, F.; Proriol, J.; Rosnet, P.; Rossignol, J.-M.; Fearnley, T.; Hansen, J. B.; Hansen, J. D.; Hansen, J. R.; Hansen, P. H.; Nilsson, B. S.; Rensch, B.; Wäänänen, A.; Kyriakis, A.; Markou, C.; Simopoulou, E.; Vayaki, A.; Zachariadou, K.; Blondel, A.; Brient, J. C.; Rougé, A.; Rumpf, M.; Valassi, A.; Videau, H.; Focardi, E.; Parrini, G.; Corden, M.; Georgiopoulos, C.; Jaffe, D. E.; Antonelli, A.; Bencivenni, G.; Bologna, G.; Bossi, F.; Campana, P.; Capon, G.; Casper, D.; Chiarella, V.; Felici, G.; Laurelli, P.; Mannocchi, G.; Murtas, F.; Murtas, G. P.; Passalacqua, L.; Pepe-Altarelli, M.; Curtis, L.; Dorris, S. J.; Halley, A. W.; Knowles, I. G.; Lynch, J. G.; O'Shea, V.; Raine, C.; Reeves, P.; Scarr, J. M.; Smith, K.; Teixeira-Dias, P.; Thompson, A. S.; Thomson, F.; Thorn, S.; Turnbull, R. M.; Becker, U.; Geweniger, C.; Graefe, G.; Hanke, P.; Hansper, G.; Hepp, V.; Kluge, E. E.; Putzer, A.; Schmidt, M.; Sommer, J.; Stenzel, H.; Tittel, K.; Werner, S.; Wunsch, M.; Abbaneo, D.; Beuselinck, R.; Binnie, D. M.; Cameron, W.; Dornan, P. J.; Morawitz, P.; Moutoussi, A.; Nash, J.; Sedgbeer, J. K.; Stacey, A. M.; Williams, M. D.; Dissertori, G.; Girtler, P.; Kuhn, D.; Rudolph, G.; Betteridge, A. P.; Bowdery, C. K.; Colrain, P.; Crawford, G.; Finch, A. J.; Foster, F.; Hughes, G.; Sloan, T.; Whelan, E. P.; Williams, M. I.; Galla, A.; Greene, A. M.; Hoffmann, C.; Jacobs, K.; Kleinknecht, K.; Quast, G.; Renk, B.; Rohne, E.; Sander, H.-G.; van Gemmeren, P.; Zeitnitz, C.; Aubert, J. J.; Bencheikh, A. M.; Benchouk, C.; Bonissent, A.; Bujosa, G.; Calvet, D.; Carr, J.; Diaconu, C.; Konstantinidis, N.; Payre, P.; Rousseau, D.; Talby, M.; Sadouki, A.; Thulasidas, M.; Tilquin, A.; Trabelsi, K.; Aleppo, M.; Ragusa, F.; Bauer, C.; Berlich, R.; Blum, W.; Büscher, V.; Dietl, H.; Dydak, F.; Ganis, G.; Gotzhein, C.; Kroha, H.; Lütjens, G.; Lutz, G.; Männer, W.; Moser, H.-G.; Richter, R.; Rosado-Schlosser, A.; Schael, S.; Settles, R.; Seywerd, H.; Denis, R. St.; Stenzel, H.; Wiedenmann, W.; Wolf, G.; Boucrot, J.; Callot, O.; Cordier, A.; Davier, M.; Duflot, L.; Grivaz, J.-F.; Heusse, Ph.; Höcker, A.; Jacholkowska, A.; Jacquet, M.; Kim, D. W.; Le Diberder, F.; Lefrançois, J.; Lutz, A.-M.; Nikolic, I.; Park, H. J.; Schune, M.-H.; Simion, S.; Veillet, J.-J.; Videau, I.; Zerwas, D.; Azzurri, P.; Bagliesi, G.; Batignani, G.; Bettarini, S.; Bozzi, C.; Calderini, G.; Carpinelli, M.; Ciocci, M. A.; Ciulli, V.; Dell'Orso, R.; Fantechi, R.; Ferrante, I.; Giassi, A.; Gregorio, A.; Ligabue, F.; Lusiani, A.; Marrocchesi, P. S.; Messineo, A.; Palla, F.; Rizzo, G.; Sanguinetti, G.; Sciabà, A.; Spagnolo, P.; Steinberger, J.; Tenchini, R.; Tonelli, G.; Vannini, C.; Verdini, P. G.; Walsh, J.; Blair, G. A.; Bryant, L. M.; Cerutti, F.; Chambers, J. T.; Gao, Y.; Green, M. G.; Medcalf, T.; Perrodo, P.; Strong, J. A.; von Wimmersperg-Toeller, J. H.; Botterill, D. R.; Clifft, R. W.; Edgecock, T. R.; Haywood, S.; Maley, P.; Norton, P. R.; Thompson, J. C.; Wright, A. E.; Bloch-Devaux, B.; Colas, P.; Emery, S.; Kozanecki, W.; Lançon, E.; Lemaire, M. C.; Locci, E.; Marx, B.; Perez, P.; Rander, J.; Renardy, J.-F.; Roussarie, A.; Schuller, J.-P.; Schwindling, J.; Trabelsi, A.; Vallage, B.; Black, S. N.; Dann, J. H.; Johnson, R. P.; Kim, H. Y.; Litke, A. M.; McNeil, M. A.; Taylor, G.; Booth, C. N.; Boswell, R.; Brew, C. A. J.; Cartwright, S.; Combley, F.; Koksal, A.; Letho, M.; Newton, W. M.; Reeve, J.; Thompson, L. F.; Böhrer, A.; Brandt, S.; Cowan, G.; Grupen, C.; Saraiva, P.; Smolik, L.; Stephan, F.; Apollonio, M.; Bosisio, L.; Della Marina, R.; Giannini, G.; Gobbo, B.; Musolino, G.; Putz, J.; Rothberg, J.; Wasserbaech, S.; Williams, R. W.; Armstrong, S. R.; Elmer, P.; Feng, Z.; Ferguson, D. P. S.; Gao, Y. S.; González, S.; Grahl, J.; Greening, T. C.; Hayes, O. J.; Hu, H.; McNamara, P. A.; Nachtman, J. M.; Orejudos, W.; Pan, Y. B.; Saadi, Y.; Scott, I. J.; Walsh, A. M.; Wu, Sau Lan; Wu, X.; Yamartino, J. M.; Zheng, M.; Zobernig, G.; Aleph Collaboration

1996-02-01

A search for the radiative decay of excited charged leptons, ℓ ∗, and for radiative and weak decays of excited electron neutrinos, ν e∗, is performed, using the 5.8 pb -1 of data collected by ALEPH at 130-140 GeV. No evidence for a signal is found in single or pair production. Excluded mass limits from pair production are close to 65 GeV/ c2 for all excited lepton species. Limits on the couplings, {λ}/{m ℓ ∗}, of excited leptons are derived from single production. For an excited lepton mass of 130 GeV/ c2, these limits are 0.04 GeV -1 for μ ∗ and τ ∗, and 0.0007 GeV -1 for e ∗. For ν e∗, the limit is at the level of 0.03 GeV -1 for a mass of 120 GeV/ c2, independent of the decay branching ratios.

Background components of Ge(Li) and GeHP-detectors in the passive shield

International Nuclear Information System (INIS)

Buraeva, E.A.; Davydov, M.G.; Zorina, L.V.; Stasov, V.V.

2007-01-01

The gamma-spectrometer Ge(Li)- and the extra pure Ge-detector background components in a specially designed passive shield were subjected to investigation in the land-based laboratory in 1996-2006. The measurement time period varied from 45 up to 240 hours. The detector background is caused by the radionuclides in the shield material, in the shield cells and in the detector materials. The prominence was given to the study of the revealed time dependence of 222 Rn daughter product background including '2 10 Pb 46.5 keV peak [ru

Observation of a peak at 1.28 GeV in the etaππ system in the reaction γp -> etaπ+π-p

International Nuclear Information System (INIS)

Atkinson, M.; Davenport, M.; Flower, P.; Hutton, J.S.; Kumar, B.R.; Morris, J.A.G.; Morris, J.V.; Sharp, P.H.; Lassalle, J.C.; Patrick, G.N.; Storr, K.M.; Axon, T.J.; Barberis, D.; Brodbeck, T.J.; Brookes, G.R.; Bunn, J.J.; Bussey, P.J.; Clegg, A.B.; Dainton, J.B.; Dickinson, B.; Diekmann, B.; Donnachie, A.; Ellison, R.J.; Flynn, P.J.; Galbraith, W.; Heinloth, K.; Henderson, R.C.W.; Hughes-Jones, R.E.; Ibbotson, M.; Jakob, H.P.; Jung, M.; Lafferty, G.D.; Lane, J.B.; Liebenau, V.; McClatchey, R.; Mercer, D.; Newton, D.; Paterson, C.; Paul, E.; Raine, C.; Reidenbach, M.; Rotscheidt, H.; Schloesser, A.; Skillicorn, I.O.; Smith, K.M.; Thompson, R.J.; Waite, A.P.; Worsell, M.F.

1984-01-01

A peak is reported in the etaπ + π - system, produced in the reaction γp->etaπ + π - p, at a mass of 1.28+-0.01 GeV with a width of 0.08+-0.02 GeV. Possible spin-parity assignments for the peak are shown to be Jsup(π)=1 - , Jsup(π)=1 + or Jsup(π)=2 + and interpretations of these assignments are discussed. (orig.)

Effects of hydrogenation on magnetism of UNiGe

Energy Technology Data Exchange (ETDEWEB)

Adamska, A.M., E-mail: anna@mag.mff.cuni.cz [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30 059 Cracow (Poland); Havela, L. [Department of Condensed Matter Physics, Charles University, Ke Karlovu 5, 12116 Prague 2 (Czech Republic); Prochazka, J. [Faculty of Sports and Physical Education, Charles University, Jose Martiho 31, 16252, Prague 6 (Czech Republic); Andreev, A.V. [Institute of Physics, Academy of Sciences, Na Slovance 2, 18221 Prague (Czech Republic); Skourski, Y. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden (Germany)

2011-12-15

U-based intermetallic compound UNiGe absorbs hydrogen up to the stoichiometry UNiGeH{sub 1.2}. In analogy to other compounds with the TiNiSi-type of structure, the structure is modified into hexagonal. The zig-zag U-chains are stretched, the U-U spacing is largely enhanced and the ordering temperature increases up to 100 K. The ordered state has a spontaneous moment, but it is unlikely to be a simple ferromagnet. - Highlights: > UNiGe exhibits a variety of magnetic properties. > Hydrogenation modifies the crystal, electronic structure, and the magnetic properties. > Upon hydrogenation, the crystal symmetry of UNiGe increases from orthorhombic to hexagonal. > Magnetic ordering temperature of UNiGe (T{sub N}=44 K) is double in the hydride, possible second phase transition.