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Sample records for ratio si nano-pillar

  1. Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars

    Science.gov (United States)

    Wang, Shuguang; Zhou, Tong; Li, Dehui; Zhong, Zhenyang

    2016-06-01

    The scalable array of ordered nano-pillars with precisely controllable quantum nanostructures (QNs) are ideal candidates for the exploration of the fundamental features of cavity quantum electrodynamics. It also has a great potential in the applications of innovative nano-optoelectronic devices for the future quantum communication and integrated photon circuits. Here, we present a synthesis of such hybrid system in combination of the nanosphere lithography and the self-assembly during heteroepitaxy. The precise positioning and controllable evolution of self-assembled Ge QNs, including quantum dot necklace(QDN), QD molecule(QDM) and quantum ring(QR), on Si nano-pillars are readily achieved. Considering the strain relaxation and the non-uniform Ge growth due to the thickness-dependent and anisotropic surface diffusion of adatoms on the pillars, the comprehensive scenario of the Ge growth on Si pillars is discovered. It clarifies the inherent mechanism underlying the controllable growth of the QNs on the pillar. Moreover, it inspires a deliberate two-step growth procedure to engineer the controllable QNs on the pillar. Our results pave a promising avenue to the achievement of desired nano-pillar-QNs system that facilitates the strong light-matter interaction due to both spectra and spatial coupling between the QNs and the cavity modes of a single pillar and the periodic pillars.

  2. The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars.

    Science.gov (United States)

    Zaumseil, P; Kozlowski, G; Schubert, M A; Yamamoto, Y; Bauer, J; Schülli, T U; Tillack, B; Schroeder, T

    2012-09-07

    We study the growth and relaxation processes of Ge nano-clusters selectively grown by chemical vapor deposition on free-standing 90 nm wide Si(001) nano-pillars with a thin Si(0.23)Ge(0.77) buffer layer. We found that the dome-shaped SiGe layer with a height of about 28 nm as well as the Ge dot deposited on top of it partially relaxes, mainly by elastic lattice bending. The Si nano-pillar shows a clear compliance behavior-an elastic response of the substrate on the growing film-with the tensile strained top part of the pillar. Additional annealing at 800 °C leads to the generation of misfit dislocation and reduces the compliance effect significantly. This example demonstrates that despite the compressive strain generated due to the surrounding SiO(2) growth mask it is possible to realize an overall tensile strain in the Si nano-pillar and following a compliant substrate effect by using a SiGe buffer layer. We further show that the SiGe buffer is able to improve the structural quality of the Ge nano-dot.

  3. Material versatility using replica molding for large-scale fabrication of high aspect-ratio, high density arrays of nano-pillars

    International Nuclear Information System (INIS)

    Li, Y; Menon, C; Ng, H W; Gates, B D

    2014-01-01

    Arrays of high aspect-ratio (AR) nano-pillars have attracted a lot of interest for various applications, such as for use in solar cells, surface acoustic sensors, tissue engineering, bio-inspired adhesives and anti-reflective surfaces. Each application may require a different structural material, which can vary in the required chemical composition and mechanical properties. In this paper, a low cost fabrication procedure is proposed for large scale, high AR and high density arrays of nano-pillars. The proposed method enables the replication of a master with high fidelity, using the subsequent replica molds multiple times, and preparing arrays of nano-pillars in a variety of different materials. As an example applied to bio-inspired dry adhesion, polymeric arrays of nano-pillars are prepared in this work. Thermoset and thermoplastic nano-pillar arrays are examined using an atomic force microscope to assess their adhesion strength and its uniformity. Results indicate the proposed method is robust and can be used to reliably prepare nano-structures with a high AR. (paper)

  4. Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

    Science.gov (United States)

    Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

    2015-08-01

    A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

  5. Effect of the out-of-plane stress on the properties of epitaxial SrTiO{sub 3} films with nano-pillar array on Si-substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Dongmei [School of Automation, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

    2015-08-21

    A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO{sub 3} films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO{sub 3} films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO{sub 3} films similar to PZT and other lead-based ferroelectrics can be expected.

  6. Silicon based near infrared photodetector using self-assembled organic crystalline nano-pillars

    Energy Technology Data Exchange (ETDEWEB)

    Ajiki, Yoshiharu, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Micromachine Center, 67 Kanda Sakumagashi, Chiyoda-ku, Tokyo 100-0026 (Japan); Kan, Tetsuo [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Yahiro, Masayuki; Hamada, Akiko; Adachi, Chihaya [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Adachi, Junji [Office for Strategic Research Planning, Kyushu University, 6-10-1 Hakozaki, Higashi, Fukuoka 812-8581 (Japan); Matsumoto, Kiyoshi [IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Shimoyama, Isao, E-mail: yoshiharu-ajiki@ot.olympus.co.jp, E-mail: isao@i.u-tokyo.ac.jp [Department of Mechano-Informatics, Graduate School of Information Science and Technology, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); IRT Research Initiative, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan)

    2016-04-11

    We propose a silicon (Si) based near-infrared photodetector using self-assembled organic crystalline nano-pillars, which were formed on an n-type Si substrate and were covered with an Au thin-film. These structures act as antennas for near-infrared light, resulting in an enhancement of the light absorption on the Au film. Because the Schottky junction is formed between the Au/n-type Si, the electron excited by the absorbed light can be detected as photocurrent. The optical measurement revealed that the nano-pillar structures enhanced the responsivity for the near-infrared light by 89 (14.5 mA/W) and 16 (0.433 mA/W) times compared with those of the photodetector without nano-pillars at the wavelengths of 1.2 and 1.3 μm, respectively. Moreover, no polarization dependency of the responsivity was observed, and the acceptable incident angle ranged from 0° to 30°. These broad responses were likely to be due to the organic nano-pillar structures' having variation in their orientation, which is advantageous for near-infrared detector uses.

  7. Thermoelectric properties of silicon nano pillars

    Energy Technology Data Exchange (ETDEWEB)

    Stranz, Andrej; Soekmen, Uensal; Waag, Andreas; Peiner, Erwin [Institute of Semiconductor Technology, Braunschweig (Germany)

    2010-07-01

    In order to establish silicon as a efficient thermoelectric material, its high thermal conductivity has to be reduced which is feasible, e.g., by nano structuring. Therefore, in this study Si-based sub-micron pillars of various dimensions were investigated. Using anisotropic etching followed by thermal oxidation we could fabricate pillars of diameters <500 nm, about 25 {mu}m in height with aspect ratios of more than 50. The distance between the pillars was varied from 500 nm to 10 micron. Besides the fabrication and structural characterization of sub-micron silicon pillars, and adequate metrology for measuring their thermoelectric properties was implemented. Commercial tungsten probes and self-made gold probes, as well as Wollaston wire probes were used for electrical and thermal conductivity, as well as Seebeck voltage measurements on single pillars in a scanning electron microscope equipped with nano manipulators.

  8. Wettability transition of plasma-treated polystyrene micro/nano pillars-aligned patterns

    Directory of Open Access Journals (Sweden)

    2010-12-01

    Full Text Available This paper reports the wettability transition of plasma-treated polystyrene (PS micro/nano pillars-aligned patterns. The micro/nano pillars were prepared using hot embossing on silicon microporous template and alumina nanoporous template, which were fabricated by ultraviolet (UV lithography and inductive coupled plasma (ICP etching, and two-step anodic oxidation, respectively. The results indicate that the combination of micro/nano patterning and plasma irradiation can easily regulate wettabilities of PS surfaces, i.e. from hydrophilicity to hydrophobicity, or from hydrophobicity to superhydrophilicity. During the wettability transition from hydrophobicity to hydrophilicity there is only mild hydrophilicity loss. After plasma irradiation, moreover, the wettability of PS micro/nano pillars-aligned patterns is more stable than that of flat PS surfaces. The observed wettability transition and wettability stability of PS micro/nano pillars-aligned patterns are new phenomena, which may have potential in creating programmable functional polymer surfaces.

  9. Optimization of silver-assisted nano-pillar etching process in silicon

    International Nuclear Information System (INIS)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-01-01

    Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert ® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H 2 O 2 ), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H 2 O 2 concentration and etching time. The predicted model is in good agreement with the experimental data where R 2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time

  10. Optimization of silver-assisted nano-pillar etching process in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Azhari, Ayu Wazira, E-mail: ayuwazira@unimap.edu.my [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); School of Environmental Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis (Malaysia); Sopian, Kamaruzzaman [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia); Desa, Mohd Khairunaz Mat [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal, Pulau Pinang, 14300 (Malaysia); Zaidi, Saleem H. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, Bangi, Selangor 43650 (Malaysia)

    2015-12-01

    Graphical abstract: - Highlights: • Statistical analysis for synthesis of nano-pillar in crystalline Si substrates is presented. • Model is in good agreement with experimental for the etching rate and lateral etching respectively. • Optimum values for all parameters in fabrication of nanostructured Si are attained. - Abstract: In this study, a respond surface methodology (RSM) model is developed using three-level Box–Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert{sup ®} software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H{sub 2}O{sub 2}), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H{sub 2}O{sub 2} concentration and etching time. The predicted model is in good agreement with the experimental data where R{sup 2} is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant

  11. Electrical characterization of Ge–Sb–Te phase change nano-pillars using conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Bae, Byeong-Ju; Hong, Sung-Hoon; Hwang, Seon-Yong; Hwang, Jae-Yeon; Yang, Ki-Yeon; Lee, Heon

    2009-01-01

    The electrical characteristic of phase change material was studied in nano-scale using nanoimprint lithography and a conducting atomic force microscopy measurement system. Nanoimprint lithography was used to fabricate the nano-scale phase change material pattern. A Pt-coated AFM tip was used as a top electrode to measure the electrical characteristics of the GST nano-pillar. The GST nano-pillar, which is 200 nm in diameter, was amorphized by 2 V and 5 ns reset pulse and was then brought back to the crystalline phase by applying 1.3 V and 150 ns set pulse. Using this measurement system, the GST nano-pillar was switched between the amorphous and crystalline phases more than five times. The results of the reset and the set current measurement with the GST nano-pillar sizes show that the reset and the set currents also decreased with the decrease of the GST pillar size

  12. Large spin current injection in nano-pillar-based lateral spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Nomura, Tatsuya [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp [Department of Physics, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 744 Motooka, Fukuoka, 819-0395 (Japan)

    2016-08-26

    We have investigated the influence of the injection of a large pure spin current on a magnetization process of a non-locally located ferromagnetic dot in nano-pillar-based lateral spin valves. Here, we prepared two kinds of the nano-pillar-type lateral spin valve based on Py nanodots and CoFeAl nanodots fabricated on a Cu film. In the Py/Cu lateral spin valve, although any significant change of the magnetization process of the Py nanodot has not been observed at room temperature. The magnetization reversal process is found to be modified by injecting a large pure spin current at 77 K. Switching the magnetization by the nonlocal spin injection has also been demonstrated at 77 K. In the CoFeAl/Cu lateral spin valve, a room temperature spin valve signal was strongly enhanced from the Py/Cu lateral spin valve because of the highly spin-polarized CoFeAl electrodes. The room temperature nonlocal switching has been demonstrated in the CoFeAl/Cu lateral spin valve.

  13. Diameter dependence of emission power in MgO-based nano-pillar spin-torque oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bochong; Kubota, Hitoshi, E-mail: hit-kubota@aist.go.jp; Yakushiji, Kay; Tamaru, Shingo; Arai, Hiroko; Imamura, Hiroshi; Fukushima, Akio; Yuasa, Shinji [Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-06-20

    The dependence on diameter of the emission power in MgO-based nano-pillar spin torque oscillators (STOs) was systematically investigated. A maximum emission power of over 2.5 μW was obtained around 300 nm in diameter, which is the largest reported to date among the out-of-plane precession STOs. By analyzing physical quantities, precession cone angle of the free-layer magnetization was evaluated. In the diameter range below 300 nm, the increase in power was mainly due to the increase of the injected current. The power decrease above 300 nm is possibly attributed to the decrease in the averaged precession cone angle, suggesting spatial phase difference of magnetization precession. This study provides the method for estimating the optimum STO diameter, which is of great importance in practical use.

  14. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    International Nuclear Information System (INIS)

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  15. Optimization of silver-assisted nano-pillar etching process in silicon

    Science.gov (United States)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  16. Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

    International Nuclear Information System (INIS)

    Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

    2015-01-01

    In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

  17. Effects of Helium Implantation on the Mechanical Behavior of 100nm-diameter Iron Nano-pillars

    International Nuclear Information System (INIS)

    Landau, Peri; Guo, Qiang; Hosemann, Peter; Wang, Yongqiang; Greer, Julia R.

    2014-01-01

    Ferritic and ferritic-martensitic steels are being considered for cladding in the next generation nuclear reactors as well as fusion applications and spallation source materials. For these applications, helium (He) accumulation due to the high appmHe/dpa ratio, represent a matter of concern rooted in the detrimental effects of irradiation on the mechanical performance. The investigations of the effects of ion beam irradiation on mechanical properties of iron represent a useful way to simplify the complexity of irradiation process. This study is focused on the effects of mostly He bubbles on the mechanical behavior and deformation mechanisms

  18. Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

    International Nuclear Information System (INIS)

    Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

    2011-01-01

    Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

  19. Influence of the Si/Al ratio on the separation properties of SSZ-13 zeolite membranes

    NARCIS (Netherlands)

    Kosinov, N.; Auffret, C.; Borghuis, G.J.; Sripathi, V.G.P.; Hensen, E.J.M.

    2015-01-01

    SSZ-13 (CHA) zeolite membranes supported by a-alumina hollow fibers were prepared by a hydrothermal secondary growth method. The gel Si/Al ratio was varied between 5 and 100. The water adsorption depended strongly on the Si/Al ratio. Comparatively, ethanol adsorption varied less with membrane

  20. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Science.gov (United States)

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  1. Effect of Si/Al{sub 2} Ratio on 2-butanol Dehydration over HY Zeolite Catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Euna; Choi, Hyeonhee; Jeon, Jong-Ki [Kongju National University, Cheonan (Korea, Republic of)

    2015-02-15

    Synthesis of butenes through dehydration of 2-butanol was investigated over HY zeolite catalysts. 2-Butanol dehydration reaction was carried out in a fixed bed catalytic reactor. 2-Butanol conversion was increased with increase of Si/Al{sub 2} ratio of HY zeolite catalysts, which can be ascribed to increase of acid strength with increase of Si/Al{sub 2} ratio. Selectivities to 1-butene, trans-2-butene, and cis-2-butene were not greatly influenced by the change of the Si/Al{sub 2} ratio of HY zeolite. As a result, it was advantageous to use a HY zeolite catalyst with 60 Si/Al{sub 2} ratio for maximizing the yield of 1-butene in the dehydration of 2-butanol. The optimal reaction temperature for maximizing the yield of 1-butene was 250 .deg. C over HY (60) catalyst.

  2. Effect of Si/Al2 Ratio on 2-butanol Dehydration over HY Zeolite Catalysts

    International Nuclear Information System (INIS)

    Jung, Euna; Choi, Hyeonhee; Jeon, Jong-Ki

    2015-01-01

    Synthesis of butenes through dehydration of 2-butanol was investigated over HY zeolite catalysts. 2-Butanol dehydration reaction was carried out in a fixed bed catalytic reactor. 2-Butanol conversion was increased with increase of Si/Al 2 ratio of HY zeolite catalysts, which can be ascribed to increase of acid strength with increase of Si/Al 2 ratio. Selectivities to 1-butene, trans-2-butene, and cis-2-butene were not greatly influenced by the change of the Si/Al 2 ratio of HY zeolite. As a result, it was advantageous to use a HY zeolite catalyst with 60 Si/Al 2 ratio for maximizing the yield of 1-butene in the dehydration of 2-butanol. The optimal reaction temperature for maximizing the yield of 1-butene was 250 .deg. C over HY (60) catalyst

  3. Alternative Observers for SI Engine Air/Fuel Ratio Control

    DEFF Research Database (Denmark)

    Hendricks, Elbert; Poulsen, Jannik; Olsen, Mads Bruun

    1996-01-01

    In earlier work it has been shown that a nonlinear observer based on the use of the manifold pressure state equation and a nonlinear fuel film compensator can maintain accurate A/F ratio control during both steady state and transient operation. This observer may be called a manifold absolute pres...... engine control system designer with a variety of robust control systems which can easily be made redundant in order to satisfy newer engine emissions and diagnosis requirements and legislation...

  4. Preparation of anodic aluminum oxide (AAO) nano-template on silicon and its application to one-dimensional copper nano-pillar array formation

    International Nuclear Information System (INIS)

    Shen, Lan; Ali, Mubarak; Gu, Zhengbin; Min, Bonggi; Kim, Dongwook; Park, Chinho

    2013-01-01

    Anodized aluminum oxide (AAO) nanotemplates were prepared using the Al/Si substrates with an aluminum layer thickness of about 300 nm. A two-step anodization process was used to prepare an ordered porous alumina nanotemplate, and the pores of various sizes and depths were constructed electrochemically through anodic oxidation. The optimum morphological structure for large area application was constructed by adjusting the applied potential, temperature, time, and electrolyte concentration. SEM investigations showed that hexagonal-close-packed alumina nano-pore arrays were nicely constructed on Si substrate, having smooth wall morphologies and well-defined diameters. It is also reported that one dimensional copper nanopillars can be fabricated using the tunable nanopore sized AAO/Si template, by controlling the copper deposition process

  5. Si and C isotopic ratios in AGB stars: SiC grain data, models, and the galactic evolution of the Si Isotopes

    NARCIS (Netherlands)

    Zinner, E.; Nittler, L.R.; Gallino, R.; Karakas, A.I.; Lugaro, M.A.; Straniero, O.; Lattanzio, J.C.

    2006-01-01

    Presolar grains of the mainstream, Y and Z type are believed to have an origin in carbon stars. We compared the C and Si isotopic ratios of these grains [1] with the results of theoretical models for the envelope compositions of AGB stars. Two sets of models (FRANEC, Monash) use a range of stellar

  6. Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature

    International Nuclear Information System (INIS)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-01

    We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages

  7. The role of groundwater discharge fluxes on Si:P ratios in a major tributary to Lake Erie.

    Science.gov (United States)

    Maavara, Taylor; Slowinski, Stephanie; Rezanezhad, Fereidoun; Van Meter, Kimberly; Van Cappellen, Philippe

    2018-05-01

    Groundwater discharge can be a major source of nutrients to river systems. Although quantification of groundwater nitrate loading to streams is common, the dependence of surface water silicon (Si) and phosphorus (P) concentrations on groundwater sources has rarely been determined. Additionally, the ability of groundwater discharge to drive surface water Si:P ratios has not been contextualized relative to riverine inputs or in-stream transformations. In this study, we quantify the seasonal dynamics of Si and P cycles in the Grand River (GR) watershed, the largest Canadian watershed draining into Lake Erie, to test our hypothesis that regions of Si-rich groundwater discharge increase surface water Si:P ratios. Historically, both the GR and Lake Erie have been considered stoichiometrically P-limited, where the molar Si:P ratio is greater than the ~16:1 phytoplankton uptake ratio. However, recent trends suggest that eastern Lake Erie may be approaching Si-limitation. We sampled groundwater and surface water for dissolved and reactive particulate Si as well as total dissolved P for 12months within and downstream of a 50-km reach of high groundwater discharge. Our results indicate that groundwater Si:P ratios are lower than the corresponding surface water and that groundwater is a significant source of bioavailable P to surface water. Despite these observations, the watershed remains P-limited for the majority of the year, with localized periods of Si-limitation. We further find that groundwater Si:P ratios are a relatively minor driver of surface water Si:P, but that the magnitude of Si and P loads from groundwater represent a large proportion of the overall fluxes to Lake Erie. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

    International Nuclear Information System (INIS)

    Xu Jiaxiong; Yao Ruohe

    2011-01-01

    Boron-doped or phosphorus-doped β-FeSi 2 thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi 2 thin films and current-voltage characteristics of doped β-FeSi 2 /Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi 2 thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.

  9. Ge/Si Ratios as a Tracer of Hydrothermal Activity in the Nepal Himalaya

    Science.gov (United States)

    Evans, M. J.; Derry, L. A.

    2001-12-01

    Advection of deep-seated crustal rocks, high internal heat production, and rapid erosion of the thrust wedge result in steep thermal gradients in the crystalline rocks of the Himalayan front. Meteoric water circulation within these rocks produces geothermal activity in the deeply-incised river valleys near the Main Central Thrust shear zone. The springs have measured temperatures up to 70° C and TDS up to 8000 mg/L and drive significant anomalies in river chemistry. We have carried out a detailed study of the role of hot springs in the Narayani River basin of central Nepal (area 35,000 km2), the major drainage of the central Nepal Himalaya and a major tributary to the Ganges. In order to quantify the fluxes of heat and solutes from geothermal systems in the Narayani basin, the hydrothermal fluid flux must be estimated. As part of an ongoing effort to investigate the use of germanium-silicon systematics, we measured Ge/Si ratios in main stem, tributary and hot spring waters of the Narayani basin. While Ge/Si ratios in tributaries are similar to non-polluted world rivers (Iceland (9 to 150 μ mol/mol). The high Ge/Si ratios in the hot springs may reflect Rayleigh fractionation as low Ge/Si quartz is precipitated. The wide disparity in stream vs. hydrothermal values makes Ge/Si a valuable tool for quantifying hydrothermal fluid flux by mass balance. We can use a hydrothermal fluid flux estimate derived from the chemical mass balance to estimate convective heat loss in the Narayani basin. Preliminary estimates in the Marsyandi River yield a thermal power output rate of 200 MW, comparable with geothermal fields in the Taupo Volcanic Zone and when distributed over the spring affected area, yield a hydrothermal heat flow (160 mW/m2) comparable to continental heat flow and hydrothermal heat loss in the geothermal belt across Tibet. Fluxes of solutes and heat carried by Himalayan hot springs appear to be significant for Himalayan river chemistry and for thermal models of

  10. Thermal conductivity of M-Si-N (M = Mg, Ca, Sr, Ba) compounds with varying M/Si ratio

    NARCIS (Netherlands)

    Hintzen, H.T.J.M.; Bruls, R.J.; Delsing, A.C.A.; Itatani, K.; Tanaka, S.; With, de G.; Metselaar, R.

    2002-01-01

    The thermal cond. of M-Si-N (M = Mg, Ca, Sr, Ba) compds. was examd. The emphasis is on MgSiN2 (a material which can be derived from AlN by replacing systematically 2Al3+ by Mg2+/Si4+), and Si3N4 (the well known b-modification as well as the recently discovered cubic modification with the spinel

  11. SPICE evaluation of the S/N ratio for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Nardi, F.

    1999-01-01

    SPICE simulations of AC-coupled single-sided Si microstrip detectors connected to the Pre-Shape 32 read-out chip have been performed in order to determine the geometrical characteristics which maximize the signal-to-noise ratio at room temperature. All the resistive and capacitive elements of the detector have been determined as a function of the ω/ρ ratio, by considering experimental and simulated data available in the literature. The SPICE model takes into account all the main noise source in the detector and read-out electronics. The minimum ionizing particle current signal shape characteristics have been introduced in the simulations. Two read-out configurations have been investigated for 6.4 cm and 12.8 cm long detectors. Finally, general guidelines in the detector design have been proposed starting from the simulation results

  12. Synthesis of Zeolite Nanomolecular Sieves of Different Si/Al Ratios

    Directory of Open Access Journals (Sweden)

    Pankaj Sharma

    2015-01-01

    Full Text Available Nanosized zeolite molecular sieves of different Si/Al ratios have been prepared using microwave hydrothermal reactor (MHR for their greater application in separation and catalytic science. The as-synthesized molecular sieves belong to four different type zeolite families: MFI (infinite and high silica, FAU (moderate silica, LTA (low silica and high alumina, and AFI (alumina rich and silica-free. The phase purity of molecular sieves has been assessed by X-ray diffraction (XRD analysis and morphological evaluation done by electron microscopy. Broad XRD peaks reveal that each zeolite molecular sieve sample is composed of nanocrystallites. Scanning electron microscopic images feature the notion that the incorporation of aluminum to MFI zeolite synthesis results in morphological change. The crystals of pure silica MFI zeolite (silicalite-1 have hexagon lump/disk-like shape, whereas MFI zeolite particles with Si/Al molar ratios 250 and 100 have distorted hexagonal lump/disk and pseudo spherical shapes, respectively. Furthermore, phase pure zeolite nanocrystals of octahedron (FAU, cubic (LTA, and rod (AFI shape have been synthesized. The average sizes of MFI, FAU, LTA, and AFI zeolite crystals are 250, 150, 50, and 3000 nm, respectively. Although the length of AFI zeolite rods is in micron scale, the thickness and width are of a few nanometers.

  13. Correlation of the Na2SiO3 to NaOH Ratios and Solid to Liquid Ratios to the Kedah’s Soil Strength

    Directory of Open Access Journals (Sweden)

    Nur Hamzah Hazamaah

    2016-01-01

    Full Text Available Geopolymer was used for the soil stabilization of Kedah’s soil at different ratios of solid to liquid and Na2SiO3 to NaOH in order to achieve the desired compressive strength. The geopolymerization process which produces an aluminosilicate gel was occurred due to the mixing of Kedah’s soil and fly ash with Na2SiO3 and NaOH. Soil stabilization by geopolymer was synthesized by the activation of fly ash and Kedah’s soil with Na2SiO3 and NaOH at different ratios of solid to liquid (1.5, 2.0, 2.5 and 3.0 and Na2SiO3 to NaOH (0.5, 1.0, 1.5, 2.0, 2.5 and 3.0 at a specific constant concentration of NaOH solution of 6M. The compressive strength up to 5.12 MPa was obtained at 3.0 of solid to liquid ratio and 2.5 of Na2SiO3 to NaOH ratio in 7 days curing at room temperature.

  14. The influence of Mg/Si ratio on the negative natural aging effect in Al–Mg–Si–Cu alloys

    International Nuclear Information System (INIS)

    Tao, G.H.; Liu, C.H.; Chen, J.H.; Lai, Y.X.; Ma, P.P.; Liu, L.M.

    2015-01-01

    The effects of natural aging (NA) on subsequent artificial aging (AA) at 180 °C in Al–Mg–Si–Cu alloys with varied Mg/Si ratios (0.5, 1 and 2) were systematically studied by Vickers micro-hardness measurements, differential scanning calorimetry and transmission electron microscopy (TEM). The alloy with large Mg/Si ratio possesses a significant negative NA effect on the maximum hardness achieved during AA preceded by an extended NA, while the alloy with small Mg/Si ratio shows a negligible negative NA effect. Though few lath-like Q''/L precipitates exist, needle-like β'' precipitates are the primary hardening precipitates in all the peak-aged alloys. The negative NA effect is demonstrated to be determined by precipitate coarsening, which is manifested microscopically as the broader precipitate length distributions (PLD) and shift of PLD toward larger length range, in AA with the prolonging of NA. Our results suggest the nature of NA clusters is quite different in Al–Mg–Si–Cu alloy varying in Mg/Si ratio. Only a small fraction of NA clusters in alloy with large Mg/Si ratio are stable and could induce preferential growth of precipitates to be considerably coarsened during AA. A large fraction of stable NA clusters in alloy with low Mg/Si ratio lead to synchronous growth of β'' precipitates, thus restricting the preferential growth

  15. Behaviour of 29Si NMR and infrared spectra of aqueous sodium and potassium silica solutions as a function of (SiO2/M2+O) ratio

    International Nuclear Information System (INIS)

    Couty, R.; Fernandez, L.

    1996-01-01

    Sodium and potassium solutions of silica with silica concentration of 1,4 mo/kg and R ms = SiO 2 /M + 2 O ratios of 4.56 to 1.6 were obtained by depolymerization of amorphous silica gel in sodium and potassium hydroxide. Solutions have been characterized by 29 Si NMR and infrared spectroscopy. The results indicated that Na + and K + exhibit the same behaviour during the depolymerization of silica. (authors). 11 refs., 4 figs., 2 tabs

  16. FTIR and electrical characterization of a-Si:H layers deposited by PECVD at different boron ratios

    Energy Technology Data Exchange (ETDEWEB)

    Orduna-Diaz, A., E-mail: abdu@susu.inaoep.mx [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Trevino-Palacios, C.G. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico); Rojas-Lopez, M.; Delgado-Macuil, R.; Gayou, V.L. [Centro de Investigacion en Biotecnologia Aplicada (CIBA), IPN, Tlaxcala, Tlax. 72197 (Mexico); Torres-Jacome, A. [Instituto Nacional de Astrofisica, Optica y Electronica, Luis Enrique Erro No. 1, Tonantzintla, Puebla 72840 (Mexico)

    2010-10-25

    Hydrogenated amorphous silicon (a-Si:H) has found applications in flat panel displays, photovoltaic solar cell and recently has been employed in boron doped microbolometer array. We have performed electrical and structural characterizations of a-Si:H layers prepared by plasma enhanced chemical vapor deposition (PECVD) method at 540 K on glass substrates at different diborane (B{sub 2}H{sub 6}) flow ratios (500, 250, 150 and 50 sccm). Fourier transform infrared spectroscopy (FTIR) measurements obtained by specular reflectance sampling mode, show Si-Si, B-O, Si-H, and Si-O vibrational modes (611, 1300, 2100 and 1100 cm{sup -1} respectively) with different strengths which are associated to hydrogen and boron content. The current-voltage curves show that at 250 sccm flow of boron the material shows the lowest resistivity, but for the 150 sccm boron flow it is obtained the highest temperature coefficient of resistance (TCR).

  17. Air-fuel ratio control of a lean burn Si engine using fuzzy self tuning method

    International Nuclear Information System (INIS)

    Akhlaghi, M.; Bakhtiari Nejad, F.; Azadi, S.

    2000-01-01

    Reducing the exhaust emission of an spark ignition engine by means of engine modifications requires consideration of the effects of these modifications on the variations of crankshaft torque and the engine roughness respectively. Only if the roughness does not exceed a certain level the vehicle do not begin to surge. This paper presents a method for controlling the air-fuel ratio for a lean burn engine. Fuzzy rules and reasoning are utilized on-line to determine the control parameters. The main advantages of this method are simple structure and robust performance in a wide range of operating conditions. A non-linear model of an Si engine with the engine torque irregularity simulation is used in this study

  18. The natural aging and precipitation hardening behaviour of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Lipeng [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Jia, Zhihong, E-mail: zhihongjia@cqu.edu.cn [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Zhang, Zhiqing; Sanders, Robert E.; Liu, Qing [College of Materials Science and Engineering, Chongqing University, Chongqing 400044 China (China); Yang, Guang [Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Centre for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-03-11

    The natural aging and artificial aging behaviours of Al-Mg-Si-Cu alloys with different Mg/Si ratios and Cu additions were investigated using Vickers microhardness measurements, differential scanning calorimetry (DSC) analysis and transmission electron microscopy (TEM) characterisation. Excess Si and Cu additions enhanced the alloy hardening ability during natural (NA) and artificial aging (AA). Alloys with low Cu and high Si contents exhibited higher precipitation hardening than alloys rich in Mg during artificial aging. In contrast, the alloys with high amounts of Cu were less dependent on the Mg/Si ratio during precipitation hardening due to their similar aging kinetics. The main precipitate phases that contributed to the peak-aging hardness were the L, Q′ and β″ phases. In the over-aging conditions, the alloys rich in Mg and Cu had finer and more numerous precipitates than their Si-rich equivalents due to the preferential precipitation of the L phase. The combination of excess Mg and high Cu resulted in an alloy with a relatively low hardness in T4 temper and a relatively higher hardness after the paint baking cycle. Thus, this alloy has good potential for use in auto body panel applications.

  19. SPICE evaluation of the S/N ratio for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Nardi, F.; Bacchetta, N.; Bisello, D.

    1999-01-01

    SPICE simulations of ac-coupled single-sided Si microstrip detectors connected to the PreShape 32 read-out chip have been performed in order to determine the geometrical characteristics (i.e., the strip pitch p and width w) which maximize the signal-to-noise ratio. All of the resistive and capacitive elements of the detector have been determined as a function of the w/p ratio by considering experimental and simulated data available in literature. The SPICE model the authors propose in this work takes into account all the main noise sources in the detector and read-out electronics. The minimum ionizing particle current signal shape has been introduced in the simulations. Two read-out configurations (every strip or every second strip) have been investigated for 6.4- and 12.8-cm-long detectors. The equivalent noise charge as determined by the simulations has been compared with analytical calculations, in order to determine the limits and the corrections to a simplified analytical noise model. Finally, general guidelines for the detector design have been proposed, based on the simulation results

  20. Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

    Science.gov (United States)

    Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

    2015-09-04

    We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

  1. Synthesis of geopolymer from spent FCC: Effect of SiO2/Al2O<3 and Na2O/SiO2 molar ratios

    Directory of Open Access Journals (Sweden)

    Trochez, J. J.

    2015-03-01

    Full Text Available This paper assesses the feasibility of using a spent fluid catalytic cracking catalyst (SFCC as precursor for the production of geopolymers. The mechanical and structural characterization of alkali-activated SFCC binders formulated with different overall (activator + solid precursor SiO2/Al2O3 and Na2O/SiO2 molar ratios are reported. Formation of an aluminosilicate ‘geopolymer’ gel is observed under all conditions of activation used, along with formation of zeolites. Increased SiO2/Al2O3 induces the formation of geopolymers with reduced mechanical strength, for all the Na2O/SiO2 ratios assessed, which is associated with excess silicate species supplied by the activator. This is least significant at increased alkalinity conditions (higher Na2O/SiO2 ratios, as larger extents of reaction of the spent catalyst are achieved. SiO2/Al2O3 and Na2O/SiO2 ratios of 2.4 and 0.25, respectively, promote the highest compressive strength (67 MPa. This study elucidates the great potential of using SFCC as precursor to produce sustainable ceramic-like materials via alkali-activation.Este artículo estudia la factibilidad de usar un catalizador gastado del proceso de craqueo (SFCC para la producción de geopolímeros. Se evalúan las características mecánicas y estructurales de los geopolímeros producidos con diferentes relaciones molares (activador + precursor solido de SiO2/Al2O3 y Na2O/SiO2. La formación de un gel geopolimérico de tipo aluminosilicato se observa a las diferentes condiciones evaluadas, así como la formación de zeolitas. Un incremento en la relación SiO2/Al2O3 genera geopolímeros de baja resistencia mecánica, a las diferentes relaciones molares Na2O/SiO2 evaluadas, como consecuencia del exceso de especies silicato provenientes del activador. Este efecto es menos significativo al incrementar las condiciones de alcalinidad (mayores relaciones Na2O/SiO2, ya que un mayor grado de reacción del catalizador gastado es alcanzado. Las

  2. Effect of Si/Ge ratio on resistivity and thermopower in Gd{sub 5}Si{sub x}Ge{sub 4-x} magnetocaloric compounds

    Energy Technology Data Exchange (ETDEWEB)

    Raj Kumar, D.M. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Manivel Raja, M., E-mail: mraja@dmrl.drdo.i [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Prabahar, K.; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad 500058 (India); Poddar, Asok; Ranganathan, R. [Saha Institute of Nuclear Physics, Kolkata 700064 (India); Suresh, K.G. [Indian Institute of Technology Bombay, Mumbai 400076 (India)

    2011-07-15

    The effect of Si/Ge ratio on resistivity and thermopower behavior has been investigated in the magnetocaloric ferromagnetic Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7-2.3. Microstructural studies reveal the presence of Gd{sub 5}(Si,Ge){sub 4}-matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The x=1.7 and 2.0 samples display the presence of a first order structural transition from orthorhombic to monoclinic phase followed by a magnetic transition of the monoclinic phase. The alloys with x=2.2 and 2.3 display only magnetic transitions of the orthorhombic phase. A low temperature feature apparent in the AC susceptibility and resistivity data below 100 K reflects an antiferromagnetic transition of secondary phase(s) present in these compounds. The resistivity behavior study correlates with microstructural studies. A large change in thermopower of -8 {mu}V/K was obtained at the magneto-structural transition for the x=2 compound. - Research highlights: Effect of Si/Ge ratio on microstructure, magneto-structural transitions, resistivity ({rho}) and thermopower S(T) behaviour has been investigated in Gd{sub 5}Si{sub x}Ge{sub 4-x} compounds with x=1.7, 2.0, 2.2 and 2.3. Microstructural studies reveal the presence of a Gd{sub 5}(Si,Ge){sub 4} -matrix phase (5:4-type) along with traces of secondary phases (5:5 or 5:3-type). The resistivity behaviour has shown good correlation with the microstructural studies. A large change in thermopower of -8{mu}V/K was obtained at the magneto-structural transition for the x=2 compound. The resistivity and change in thermopower values were high for the alloys with Si/Ge ratio {<=}1 compared to that of the alloys with Si/Ge ratio >1.

  3. Investigation of SiO{sub 2}:Na{sub 2}O ratio as a corrosion inhibitor for metal alloys

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, N.; Othman, N. K. [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan (Malaysia); Jalar, A. [Institute of Micro Engineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor Darul Ehsan (Malaysia)

    2013-11-27

    The silicate is one of the potential compounds used as a corrosion inhibitor for metal alloys. The mixture between silica and sodium hydroxide (NaOH) succeeded to produce the silicate product. The formulation of a silicate product normally variable depended by the different ratio of SiO{sub 2}:Na{sub 2}O. This research utilized the agriculture waste product of paddy using its rice husk. In this study, the amorphous silica content in rice husk ash was used after rice husk burnt in a muffle furnace at a certain temperature. The X-ray diffraction (XRD) analysis was done to determine the existence of amorphous phase of silica in the rice husk ash. There are several studies that recognized rice husk as an alternative source that obtained high silica content. The X-ray fluorescence (XRF) analysis was carried out to clarify the percentage amount of Si and O elements, which referred the silica compound in rice husk ash. The preparation of sodium silicate formulation were differ based on the SiO{sub 2}:Na{sub 2}O ratio (SiO{sub 2}:Na{sub 2}O ratio = 1.00, 2.00 and 3.00). These silicate based corrosion inhibitors were tested on several testing samples, which were copper (99.9%), aluminum alloy (AA 6061) and carbon steel (SAE 1045). The purpose of this study is to determine the appropriate SiO{sub 2}:Na{sub 2}O ratio and understand how this SiO{sub 2}:Na{sub 2}O ratio can affect the corrosion rate of each metal alloys immersed in acidic medium. In order to investigate this study, weight loss test was conducted in 0.5 M hydrochloric acid (HCl) for 24 hours at room temperature.

  4. Measurement of L X-ray intensity ratios in tantalum by proton and Si-ion impact

    International Nuclear Information System (INIS)

    Braich, J.S.; Dhal, B.B.; Singh, B.P.; Padhi, H.C.; Khurana, C.S.; Verma, H.R.

    1996-01-01

    The Lι, Lβ 1,4,6 , Lβ 2,15,3 , Lγ 1 , Lγ 2,3,6 and Lγ 4,4' , X-ray intensities relative to the Lα, caused by the impact of protons of energy 1 to 4.6 MeV and Si-ions of 70 to 98 MeV on Ta targets, h ave been measured. The results show that the intensity ratios drop significantly for all transitions except Lγ 2,3,6 /Lα with Si-ions of the same energy/amu as compared to those of protons. The experimental results have been compared with those based on the ECPSSR theoretical values. From the energy shift and change in the intensity ratios of various transitions caused by Si-ion impact, the number of outer shell vacancies in the M, N and O-shells simultaneous to that of L-shell have been estimat ed. (orig.)

  5. High-aspect-ratio and high-flatness Cu3(SiGe) nanoplatelets prepared by chemical vapor deposition.

    Science.gov (United States)

    Klementová, Mariana; Palatinus, Lukás; Novotný, Filip; Fajgar, Radek; Subrt, Jan; Drínek, Vladislav

    2013-06-01

    Cu3(SiGe) nanoplatelets were synthesized by low-pressure chemical vapor deposition of a SiH3C2H5/Ge2(CH3)6 mixture on a Cu-substrate at 500 degrees C, total pressure of 110-115 Pa, and Ge/Si molar ratio of 22. The nanoplatelets with composition Cu76Si15Ge12 are formed by the 4'-phase, and they are flattened perpendicular to the [001] direction. Their lateral dimensions reach several tens of micrometers in size, but they are only about 50 nm thick. Their surface is extremely flat, with measured root mean square roughness R(q) below 0.2 nm. The nanoplatelets grow via the non-catalytic vapor-solid mechanism and surface growth. In addition, nanowires and nanorods of various Cu-Si-Ge alloys were also obtained depending on the experimental conditions. Morphology of the resulting Cu-Si-Ge nanoobjects is very sensitive to the experimental parameters. The formation of nanoplatelets is associated with increased amount of Ge in the alloy.

  6. Can Silicon-Smelting Contribute to the Low O/Si Ratio on the Surface of Mercury?

    Science.gov (United States)

    McCubbin, F. M.; Vander Kaaden, K. E.; Hogancamp, J.; Archer, P. D., Jr.; Boyce, J. W.

    2018-01-01

    The MErcury Surface, Space ENvironment, GEochemistry, and Ranging (MESSENGER) spacecraft collected data that provided important insights into the structure, chemical makeup, and compositional diversity of Mercury. Among the many discoveries about Mercury made by MESSENGER, several surprising compositional characteristics of the surface were observed. These discoveries include elevated sulfur abundances (up to 4 wt.%), elevated abundances of graphitic carbon (0-4.1 wt.% across the surface with an additional 1-3 wt.% graphite above the global average in low reflectance materials), low iron abundances (less than 2 wt.%), and low oxygen abundances (O/Si weight ratio of 1.20+/-0.1). These exotic characteristics likely have important implications for the thermochemical evolution of Mercury and point to a planet that formed under highly reducing conditions. In the present study, we focus specifically on the low O/Si ratio of Mercury, which is anomalous compared to all other planetary materials. A recent study that considered the geochemical implications of the low O/Si ratio reported that 12-20% of the surface materials on Mercury are composed of Si-rich, Si-Fe alloys. They further postulated that the origin of the metal is best explained by a combination of space weathering and graphite-induced smelting that was facilitated by interaction of graphite with boninitic and komatiitic parental liquids. The goal of the present study is to assess the plausibility of smelting on Mercury through experiments run at the conditions that McCubbin et al. indicated would be favorable for Si-smelting.

  7. Simulation research on the effect of cooled EGR, supercharging and compression ratio on downsized SI engine knock

    Science.gov (United States)

    Shu, Gequn; Pan, Jiaying; Wei, Haiqiao; Shi, Ning

    2013-03-01

    Knock in spark-ignition(SI) engines severely limits engine performance and thermal efficiency. The researches on knock of downsized SI engine have mainly focused on structural design, performance optimization and advanced combustion modes, however there is little for simulation study on the effect of cooled exhaust gas recirculation(EGR) combined with downsizing technologies on SI engine performance. On the basis of mean pressure and oscillating pressure during combustion process, the effect of different levels of cooled EGR ratio, supercharging and compression ratio on engine dynamic and knock characteristic is researched with three-dimensional KIVA-3V program coupled with pressure wave equation. The cylinder pressure, combustion temperature, ignition delay timing, combustion duration, maximum mean pressure, and maximum oscillating pressure at different initial conditions are discussed and analyzed to investigate potential approaches to inhibiting engine knock while improving power output. The calculation results of the effect of just cooled EGR on knock characteristic show that appropriate levels of cooled EGR ratio can effectively suppress cylinder high-frequency pressure oscillations without obvious decrease in mean pressure. Analysis of the synergistic effect of cooled EGR, supercharging and compression ratio on knock characteristic indicates that under the condition of high supercharging and compression ratio, several times more cooled EGR ratio than that under the original condition is necessarily utilized to suppress knock occurrence effectively. The proposed method of synergistic effect of cooled EGR and downsizing technologies on knock characteristic, analyzed from the aspects of mean pressure and oscillating pressure, is an effective way to study downsized SI engine knock and provides knock inhibition approaches in practical engineering.

  8. Highly Oriented Growth of Catalytically Active Zeolite ZSM‐5 Films with a Broad Range of Si/Al Ratios

    OpenAIRE

    Fu, Donglong; Schmidt, Joel E.; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M.

    2017-01-01

    Abstract Highly b‐oriented zeolite ZSM‐5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al3+ usually disrupts the orientation of zeolite films. Herein, using structure‐directing agents with hydroxy groups, we demonstrate a new method to prepare highly b‐oriented zeolite ZSM‐5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞)...

  9. TYPE Ia SNe ALONG REDSHIFT: THE R(Si II) RATIO AND THE EXPANSION VELOCITIES IN INTERMEDIATE-z SUPERNOVAE

    International Nuclear Information System (INIS)

    Altavilla, G.; Ruiz-Lapuente, P.; Balastegui, A.; Mendez, J.; Espana-Bonet, C.; Irwin, M.; Ellis, R. S.; McMahon, R. M.; Walton, N. A.; Folatelli, G.; Goobar, A.; Nobili, S.; Stanishev, V.; Hillebrandt, W.

    2009-01-01

    We present a study of intermediate-z Type Ia supernovae (SNe Ia) using empirical physical diagrams which permit the investigation of those SNe explosions. This information can be very useful to reduce systematic uncertainties of the Hubble diagram of SNe Ia up to high z. The study of the expansion velocities and the measurement of the ratio R(Si II) allow subtyping of SNe Ia as done in nearby samples. The evolution of this ratio as seen in the diagram R(Si II)-(t) together with R(Si II) max versus (B - V) 0 indicates consistency of the properties at intermediate-z compared with the nearby SNe Ia. At intermediate-z, expansion velocities of Ca II and Si II are found similar to those of the nearby sample. This is found in a sample of six SNe Ia in the range 0.033 ≤z≤ 0.329 discovered within the International Time Programme of SNe Ia for Cosmology and Physics in the spring run of 2002. 7 The program run under Omega and Lambda from Supernovae and the Physics of Supernova Explosions within the International Time Programme at the telescopes of the European Northern Observatory (ENO) at La Palma (Canary Islands, Spain). Two SNe Ia at intermediate-z were of the cool FAINT type, one being an SN1986G-like object highly reddened. The R(Si II) ratio as well as subclassification of the SNe Ia beyond templates help to place SNe Ia in their sequence of brightness and to distinguish between reddened and intrinsically red supernovae. This test can be done with very high z SNe Ia and it will help to reduce systematic uncertainties due to extinction by dust. It should allow to map the high-z sample into the nearby one.

  10. Electronic states in clusters of H forms of zeolites with variation of the Si/Al ratio

    International Nuclear Information System (INIS)

    Gun'ko, V.M.

    1987-01-01

    Fragments of H forms of zeolites of the faujasite type including up to 12 silicon- and aluminum-oxygen tetrahedrons and having different Si/Al ratios have been calculated in the cluster approximation by the MINDO/3 and CNDO/2 methods. The dependence of the integral and orbital densities of electronic states in the clusters on the aluminum content has been investigated. It has been shown that the profiles of the s- and p-orbital density of states of Al remain practically unchanged as the Si/Al ratio is lowered and that the maxima of the orbital density of states of Si broaden, and new maxima appear at the bottom and top of the valence band. When the acidity of the structural OH groups is lowered, the maxima of the orbital density of states of the H atoms are displaced appreciably only in the deep valence band, while in the upper valence band the positions of the peaks of the s-orbital density of states of the H atoms remain constant. Satisfactory agreement of the calculated orbital densities of states of Si, Al, and O with the corresponding x-ray photoelectron spectra has been obtained. In the deep valence band the data from the MINDO/3 method are better than those from the CNDO/2 method and reproduce the positions of the maxima in the x-ray photoelectron spectra

  11. Quantification and isotope ratio measurement of boron in U3Si2 by inductively coupled plasma mass spectrometry

    International Nuclear Information System (INIS)

    Saha, Abhijit; Deb, S.B.; Nagar, B.K.; Saxena, M.K.; Samanta, Papu

    2014-01-01

    An analytical methodology was developed for precise quantification and isotope ratio measurement of boron in U 3 Si 2 matrix by using ICP-MS after matrix separation. The analytical technique was validated by recovery studies employing standard addition method and the accuracy in isotope ratio measurement was improved by correcting the bias factor after analyzing NIST SRM951. The quantification of B in the three U 3 Si 2 samples was found in the range of 2.32-3.90 μg g -1 with a maximum standard deviation of 3%. The 10 B/ 11 B value in the three samples was found to be 0.2455±0.0042, 0.2451±0.0036 and 0.2452±0.0041. (author)

  12. Leaching behaviour of low Ca:Si ratio CaO–SiO2–H2O systems

    International Nuclear Information System (INIS)

    Swanton, S.W.; Heath, T.G.; Clacher, A.

    2016-01-01

    A dynamic leaching study of the dissolution of low calcium to silicon ratio (C/S) calcium–silicate–hydrate (C–S–H) systems with initial C/S ranging from 0.2 to 0.6 has been undertaken. Dissolution was studied in demineralised water at 25 °C to a degree of leaching of 2.5 m 3 kg −1 . These C–S–H gels show remarkably similar behaviour during early leaching stages, giving an equilibrated pH of ~ 9.9 and a solution phase C/S of ~ 0.29. Over longer times, C–S–H gels with C/S > 0.29 evolve, on leaching, towards a congruent dissolution point with a solid C/S close to 0.84 (consistent with tobermorite) and pH ~ 10.8. C–S–H gels with C/S < 0.29 become increasingly silica-rich on leaching but maintain an alkaline pH > 9.5 down to at least C/S = 0.07 (the lowest ratio reached). For C/S < 0.7, chemical modelling and X-ray diffraction data support an explanation of the incongruent dissolution behaviour of the low C/S C–S–H gels based on the congruent dissolution of distinct amorphous silica and tobermorite-like C–S–H phases. Above C/S of 0.7, the dissolution data are well described by an ideal solid solution model for the C–S–H phases. These results are of relevance to the consideration of the disposal of silica-rich vitrified intermediate-level radioactive wastes in cement-based concepts for geological disposal, where maintenance of alkaline pH values forms a key component of the chemical barrier to radionuclide migration. The implications are that the long-term pH buffering capacity provided by cementitious backfill materials would not be significantly affected by interactions with silica-rich wasteforms, which may lower the net C/S ratio of C–S–H phases, due to the natural tendency of these systems to restore congruent dissolution at pH 10.8.

  13. The effect of Si on precipitation in Al–Cu–Mg alloy with a high Cu/Mg ratio

    International Nuclear Information System (INIS)

    Liu, L.; Chen, J.H.; Wang, S.B.; Liu, C.H.; Yang, S.S.; Wu, C.L.

    2014-01-01

    The precipitations in an Al–5.0Cu–0.3Mg (wt%) alloy and an Al–5.0Cu–0.3Mg–0.3Si (wt%) alloy have been systematically investigated by high-angle annular dark-field scanning transmission electron microscopy. The results are compared to clarify the effect of Si addition. The nucleation and growth process of θ′ (Al 2 Cu) phase in Si-containing alloy during isothermal ageing at 180 °C is revealed in detail. The formation of Q″-type precipitates, on which the θ′ precursors nucleate heterogeneously, contributes to the considerable increase in the ageing kinetics and higher strength at the early ageing stage. The thickening of the θ′ precipitate is largely confined due to the rather small size of fine Q″-type precipitate. As a result, a large proportion of θ′ phase precipitates possess a specific thickness of 2c θ′ and change slightly during the entire observed duration of ageing. The θ′ growth mechanism distinct from the Al–Cu–Mg alloy finally leads to a refined θ′ morphology regarding the thickness and aspect ratio (diameter/thickness). As is counterintuitive, the θ′ precipitate thickness distribution is demonstrated to have little effect on the mechanical property steadiness at the late ageing stage of the Al–Cu–Mg–(Si) alloys

  14. GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

    Energy Technology Data Exchange (ETDEWEB)

    Orzali, Tommaso, E-mail: tommaso.orzali@sematech.org; Vert, Alexey; O' Brien, Brendan; Papa Rao, Satyavolu S. [SEMATECH, 257 Fuller Rd Suite 2200, Albany, New York 12203 (United States); Herman, Joshua L.; Vivekanand, Saikumar [College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, 251 Fuller Road, Albany, New York 12203 (United States); Hill, Richard J. W. [Now at Micron Technologies, 8000 S Federal Way, Boise, Idaho 83716 (United States); Karim, Zia [AIXTRON, Inc., 1139 Karlstad Dr., Sunnyvale, California 94089 (United States)

    2015-09-14

    The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, together with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.

  15. Study on adsorption of rhodamine B onto Beta zeolites by tuning SiO2/Al2O3 ratio.

    Science.gov (United States)

    Cheng, Zhi-Lin; Li, Yan-Xiang; Liu, Zan

    2018-02-01

    The exploration of the relationship between zeolite composition and adsorption performance favored to facilitate its better application in removal of the hazardous substances from water. The adsorption capacity of rhodamine B (RB) onto Beta zeolite from aqueous solution was reported. The relationship between SiO 2 /Al 2 O 3 ratio and adsorption capacity of Beta zeolite for RB was explored. The structure and physical properties of Beta zeolites with various SiO 2 /Al 2 O 3 ratios were determined by XRD, FTIR, TEM, BET, UV-vis and so on characterizations. The adsorption behavior of rhodamine B onto Beta zeolite matched to Langmuir adsorption isotherm and more suitable description for the adsorption kinetics was a pseudo-second-order reaction model. The maximum adsorption capacity of the as-prepared Beta zeolite with SiO 2 /Al 2 O 3 = 18.4 was up to 27.97mg/g. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

    Science.gov (United States)

    Evans, Laura J.; Beheim, Glenn M.

    2006-01-01

    High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

  17. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    OpenAIRE

    Sritharathikhun, Jaran; Krajangsang, Taweewat; Moollakorn, Apichan; Inthisang, Sorapong; Limmanee, Amornrat; Hongsingtong, Aswin; Boriraksantikul, Nattaphong; Taratiwat, Tianchai; Akarapanjavit, Nirod; Sriprapha, Kobsak

    2014-01-01

    This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H) films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ) solar cells. A p-μc-SiO:H film with a wide optical band gap (E04), 2.1 eV, can be obtain...

  18. Catalytic properties and acidity of modified MCM-41 mesoporous materials with low Si/Al ratio: heptane isomerisation

    Directory of Open Access Journals (Sweden)

    Ahmed Belhakem

    2006-06-01

    Full Text Available The catalytic properties and acidity of modified MCM-41 with a low Si/Al ratio and 0-95% NH4+ exchange were investigated. The samples were characterised by X-ray diffraction, scanning and transmission electron microscopy, and nitrogen adsorption. The acidity was studied by pyridine adsorption, temperature programmed desorption (TPD of ammonia, and infrared (IR spectroscopy. Adsorption of pyridine and IR spectroscopy indicated various types of Lewis and Brönsted acid sites. The density distribution of acid sites was determined by TPD. Both Lewis and Brönsted acid sites were found to be active in the heptane isomerisation. The presence of aluminium (low Si/Al combined to the ionic exchange between Na+ and NH4+ increases the acidity of MCM-41 materials. A close correlation between acidity and isomerisation was observed. Coke deposition, which reduces the activity, was also studied.

  19. (C III lambda 1909/Si III lambda 1892) ratio as a diagnostic for planetary nebulae and symbiotic stars

    International Nuclear Information System (INIS)

    Feibelman, W.A.; Aller, L.H.; California Univ., Los Angeles)

    1987-01-01

    Suitable IUE archival material on planetary nebulae has been examined to determine the log R /F(lambda 1909 C III)/F(lambda 1892 Si III)/ as a discriminant for distinguishing planetary nebulae from symbiotic stars and related objects. The mean value of log R for 73 galactic planetaries is 1.4, while that of extragalactic planetaries appears to be slightly lower, and that for symbiotics is 0.3. The lower value of log R for symbiotics is easily understood as a consequence of their higher densities. A plot of log R versus N-epsilon indicates that 80 percent of the planetaries fall into the range of log R between 1.2 and 1.8, but some of the peculiar and bipolar nebulae fall below log R = 1.2. The corresponding N(C++)/N(Si++) ionic ratio varies over a large range. 53 references

  20. Microcrystalline silicon oxides for silicon-based solar cells: impact of the O/Si ratio on the electronic structure

    Science.gov (United States)

    Bär, M.; Starr, D. E.; Lambertz, A.; Holländer, B.; Alsmeier, J.-H.; Weinhardt, L.; Blum, M.; Gorgoi, M.; Yang, W.; Wilks, R. G.; Heske, C.

    2014-10-01

    using an excitation frequency of 13.56 MHz with a plasma power density of 0.3 W/cm2. Glass (Corning type Eagle) and mono-crystalline silicon wafer substrates were coated in the same run at a substrate temperature of 185°C. The deposition pressure was 4 mbar and the substrate-electrode distance 20 mm. Mixtures of silane (SiH4), 1% TMB (B(CH3)3) diluted in helium, hydrogen (H2), and carbon dioxide (CO2) gases were used at flow rates of 1.25 - 0.18/0.32/500/0 - 1.07) sccm (standard cubic centimeters per minute) for the deposition of μc-SiOx:H(B) layers. By changing the CO2/SiH4 gas flow rate ratio from 0 to 6, μc-SiOx:H(B) layers with a composition of 0 Beer-Lambert law, as suggested by Ref. [3]. The film thickness d was measured using the step profiler close to the measurement spot of the spectrophotometer. It is important to measure the transmittance T(λ) and the reflectance R(λ) at the same spot on the sample, to avoid inaccuracies in the calculated absorption spectra that arise from non-uniformity of the film thickness and different positions of the reflectance and transmittance minima and maxima in the spectrum [4]. Hard X-ray photoelectron spectroscopy (HAXPES) experiments were conducted at the HiKE end-station [5] on the KMC-1 beamline [6] of the BESSY-II electron storage ring. This end-station is equipped with a Scienta R4000 electron energy analyzer capable of measuring photoelectron kinetic energies up to 10 keV. A pass energy of 200 eV was used for all measurements. Spectra were recorded with a photon energy of 2003 eV using the first and fourth order supplied by a Si(111) double crystal monochromator. The combined analyzer plus beamline resolution is approx. 0.25 eV for spectra taken at both photon energies. The top surface of the sample was electrically grounded for all measurements. The binding energy was calibrated by measuring the 4f spectrum of a grounded Au foil and setting the Au 4f7/2 binding energy equal to 84.00 eV. In SiO2, the inelastic mean

  1. Effect of the CO2/SiH4 Ratio in the p-μc-SiO:H Emitter Layer on the Performance of Crystalline Silicon Heterojunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Jaran Sritharathikhun

    2014-01-01

    Full Text Available This paper reports the preparation of wide gap p-type hydrogenated microcrystalline silicon oxide (p-μc-SiO:H films using a 40 MHz very high frequency plasma enhanced chemical vapor deposition technique. The reported work focused on the effects of the CO2/SiH4 ratio on the properties of p-μc-SiO:H films and the effectiveness of the films as an emitter layer of crystalline silicon heterojunction (c-Si-HJ solar cells. A p-μc-SiO:H film with a wide optical band gap (E04, 2.1 eV, can be obtained by increasing the CO2/SiH4 ratio; however, the tradeoff between E04 and dark conductivity must be considered. The CO2/SiH4 ratio of the p-μc-SiO:H emitter layer also significantly affects the performance of the solar cells. Compared to the cell using p-μc-Si:H (CO2/SiH4 = 0, the cell with the p-μc-SiO:H emitter layer performs more efficiently. We have achieved the highest efficiency of 18.3% with an open-circuit voltage (Voc of 692 mV from the cell using the p-μc-SiO:H layer. The enhancement in the Voc and the efficiency of the solar cells verified the potential of the p-μc-SiO:H films for use as the emitter layer in c-Si-HJ solar cells.

  2. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  3. Power plant design study of a high aspect ratio Tokamak using a SiC composite structure

    International Nuclear Information System (INIS)

    Murakami, Y.; Takase, H.; Shinya, K.

    1998-01-01

    The DREAM (drastically easy maintenance) tokamak is a fusion power plant which is designed from the viewpoint of maintenance feasibility. For this purpose, the DREAM reactor uses a plasma with a very high aspect ratio (A) and adopts SiC as a structural material. The choice of SiC affects the design of the core plasma, i.e. large inboard shield thickness, low synchrotron radiation reflectivity, and small plasma elongation for positional stability. The objectives of this study are to explore the feasibility of a high-A device, such as a power plant, and to clarify the technological impact of SiC material on the plasma design. Plasma size is optimized by the physics guidelines similar to ITER. The plasma major and minor radii of DREAM are 16 m and 2 m, respectively, and the average neutron wall load is 2.5 MW m -2 , the maximum toroidal field is 20 T, and the fusion power is 5.5 GW. Steady-state operation is obtained with 50 MW of external current-drive power and 90% bootstrap current. The divertor heat load is estimated to be about 10 MW m -2 . A radiative divertor concept is adopted to achieve a low divertor plasma temperature. The DREAM tokamak concept is found to be a possible candidate for a future power plant with more than 5 GW of fusion power and an acceptable divertor condition. (orig.)

  4. Fast predictive control for air-fuel ratio of SI engines using a ...

    African Journals Online (AJOL)

    In this paper MPC based on an adaptive neural network model is attempted for air fuel ratio (AFR), in which the model is adapted on-line to cope with nonlinear dynamics and parameter uncertainties. A radial basis function (RBF) network is employed and the recursive least squares (RLS) algorithm is used for weight ...

  5. Large-scale synthesis of monodisperse SiC nanoparticles with adjustable size, stoichiometric ratio and properties by fluidized bed chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Rongzheng; Liu, Malin, E-mail: liumalin@tsinghua.edu.cn; Chang, Jiaxing [Tsinghua University, Institute of Nuclear and New Energy Technology, Collaborative Innovation Center of Advanced Nuclear Energy Technology (China)

    2017-02-15

    A facile fluidized bed chemical vapor deposition method was proposed for the synthesis of monodisperse SiC nanoparticles by using the single precursor of hexamethyldisilane (HMDS). SiC nanoparticles with average particle size from 10 to 200 nm were obtained by controlling the temperature and the gas ratio. An experimental chemical vapor deposition phase diagram of SiC in the HMDS-Ar-H{sub 2} system was obtained and three regions of SiC-Si, SiC and SiC-C can be distinguished. The BET surface area and the photoluminescence properties of the SiC nanoparticles can be adjusted by changing the nanoparticle size. For the SiC nanospheres with free carbon, a novel hierarchical structure with 5 ~ 8 nm SiC nanoparticles embedded into the graphite matrix was obtained. The advantages of fluidized bed technology for the preparation of SiC nanoparticles were proposed based on the features of homogenous reaction zone, narrow temperature distribution, ultra-short reactant residence time and mass production.

  6. Large-scale synthesis of monodisperse SiC nanoparticles with adjustable size, stoichiometric ratio and properties by fluidized bed chemical vapor deposition

    International Nuclear Information System (INIS)

    Liu, Rongzheng; Liu, Malin; Chang, Jiaxing

    2017-01-01

    A facile fluidized bed chemical vapor deposition method was proposed for the synthesis of monodisperse SiC nanoparticles by using the single precursor of hexamethyldisilane (HMDS). SiC nanoparticles with average particle size from 10 to 200 nm were obtained by controlling the temperature and the gas ratio. An experimental chemical vapor deposition phase diagram of SiC in the HMDS-Ar-H_2 system was obtained and three regions of SiC-Si, SiC and SiC-C can be distinguished. The BET surface area and the photoluminescence properties of the SiC nanoparticles can be adjusted by changing the nanoparticle size. For the SiC nanospheres with free carbon, a novel hierarchical structure with 5 ~ 8 nm SiC nanoparticles embedded into the graphite matrix was obtained. The advantages of fluidized bed technology for the preparation of SiC nanoparticles were proposed based on the features of homogenous reaction zone, narrow temperature distribution, ultra-short reactant residence time and mass production.

  7. Highly Oriented Growth of Catalytically Active Zeolite ZSM-5 Films with a Broad Range of Si/Al Ratios.

    Science.gov (United States)

    Fu, Donglong; Schmidt, Joel E; Ristanović, Zoran; Chowdhury, Abhishek Dutta; Meirer, Florian; Weckhuysen, Bert M

    2017-09-04

    Highly b-oriented zeolite ZSM-5 films are critical for applications in catalysis and separations and may serve as models to study diffusion and catalytic properties in single zeolite channels. However, the introduction of catalytically active Al 3+ usually disrupts the orientation of zeolite films. Herein, using structure-directing agents with hydroxy groups, we demonstrate a new method to prepare highly b-oriented zeolite ZSM-5 films with a broad range of Si/Al ratios (Si/Al=45 to ∞). Fluorescence micro-(spectro)scopy was used to monitor misoriented microstructures, which are invisible to X-ray diffraction, and show Al 3+ framework incorporation and illustrate the differences between misoriented and b-oriented films. The methanol-to-hydrocarbons process was studied by operando UV/Vis diffuse reflectance micro-spectroscopy with on-line mass spectrometry, showing that the b-oriented zeolite ZSM-5 films are active and stable under realistic process conditions. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  8. The Effect of Si and Al Concentration Ratios on the Removal of U(VI) under Hanford Site 200 Area Conditions-12115

    Energy Technology Data Exchange (ETDEWEB)

    Katsenovich, Yelena; Gonzalez, Nathan; Moreno-Pastor, Carol; Lagos, Leonel [Applied Research Center, Florida International University, 10555 W. Flagler Street, Miami, FL 33174 (United States)

    2012-07-01

    Injection of reactive gases, such as NH{sub 3}, is an innovative technique to mitigate uranium contamination in soil for a vadose zone (VZ) contaminated with radionuclides. A series of experiments were conducted to examine the effect of the concentration ratio of silicon to aluminum in the presence of various bicarbonate concentrations on the coprecipitation process of U(VI). The concentration of Al in all tests remained unchanged at 2.8 mM. Experiments showed that the removal efficiency of uranium was not significantly affected by the different bicarbonate and U(VI) concentrations tested. For the lower Si:Al molar ratios of 2:1 and 18:1, the removal efficiency of uranium was relatively low (≤ 8%). For the Si:Al molar ratio of 35:1, the removal efficiency of uranium was increased to an average of ∼82% for all bicarbonate concentrations tested. At higher Si:Al molar ratios (53:1 and above), a relatively high removal efficiency of U(VI), approximately 85% and higher, was observed. These results demonstrate that the U(VI) removal efficiency is more affected by the Si:Al molar ratio than by the bicarbonate concentration in solution. The results of this experiment are promising for the potential implementation of NH{sub 3} gas injection for the remediation of U(VI) -contaminated VZ. (authors)

  9. Do Si/As ratios in growth medium affect arsenic uptake, arsenite efflux and translocation of arsenite in rice (Oryza sativa)?

    Science.gov (United States)

    Zhang, Min; Zhao, Quanli; Xue, Peiying; Zhang, Shijie; Li, Bowen; Liu, Wenju

    2017-10-01

    Silicon (Si) may decrease the uptake and accumulation of arsenic (As) in rice. However, the effects of Si/As ratios in growth medium on arsenic uptake, arsenite efflux to the external medium and translocation of arsenite in rice are currently unclear. Rice seedlings (Oryza sativa L.) were exposed to nutrient solutions with 10 μM arsenite [As(III)] or 10 μM arsenate [As(V)] to explore the influence of different silicic acid concentrations (0, 10, 100, 1000 μM) on arsenic uptake and translocation of arsenite with or without 91 μM phosphate for 24 h. Arsenic speciation was determined in nutrient solutions, roots, and shoots. In the arsenite treatments, different Si/As ratios (1:1, 10:1, 100:1) did not affect As(III) uptake by rice roots, however they did inhibit translocation of As(III) from roots to shoots significantly (P rice roots and shoots. A Si/As ratio of 100:1 reduced As(III) translocation from roots to shoots markedly without phosphate. When phosphate was supplied, As(III) translocation from roots to shoots was significantly inhibited by Si/As ratios of 10:1 and 100:1. The results indicated that in the presence of P, different silicic acid concentrations did not impact arsenite uptake and transport in rice when arsenite was supplied. However, a Si/As ratio of 100:1 inhibited As(V) uptake, as well as As(III) efflux and translocation from roots to shoots when arsenate was supplied. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Development of routines for simultaneous in situ chemical composition and stable Si isotope ratio analysis by femtosecond laser ablation inductively coupled plasma mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Frick, Daniel A., E-mail: dfrick@gfz-potsdam.de [GFZ German Research Centre for Geosciences, 14473 Potsdam (Germany); Schuessler, Jan A. [GFZ German Research Centre for Geosciences, 14473 Potsdam (Germany); Blanckenburg, Friedhelm von [GFZ German Research Centre for Geosciences, 14473 Potsdam (Germany); Institute of Geological Science, Freie Universität Berlin, 12249 Berlin (Germany)

    2016-09-28

    Stable metal (e.g. Li, Mg, Ca, Fe, Cu, Zn, and Mo) and metalloid (B, Si, Ge) isotope ratio systems have emerged as geochemical tracers to fingerprint distinct physicochemical reactions. These systems are relevant to many Earth Science questions. The benefit of in situ microscale analysis using laser ablation (LA) over bulk sample analysis is to use the spatial context of different phases in the solid sample to disclose the processes that govern their chemical and isotopic compositions. However, there is a lack of in situ analytical routines to obtain a samples' stable isotope ratio together with its chemical composition. Here, we evaluate two novel analytical routines for the simultaneous determination of the chemical and Si stable isotope composition (δ{sup 30}Si) on the micrometre scale in geological samples. In both routines, multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) is combined with femtosecond-LA, where stable isotope ratios are corrected for mass bias using standard-sample-bracketing with matrix-independent calibration. The first method is based on laser ablation split stream (LASS), where the laser aerosol is split and introduced simultaneously into both the MC-ICP-MS and a quadrupole ICP-MS. The second method is based on optical emission spectroscopy using direct observation of the MC-ICP-MS plasma (LA-MC-ICP-MS|OES). Both methods are evaluated using international geological reference materials. Accurate and precise Si isotope ratios were obtained with an uncertainty typically better than 0.23‰, 2SD, δ{sup 30}Si. With both methods major element concentrations (e.g., Na, Al, Si, Mg, Ca) can be simultaneously determined. However, LASS-ICP-MS is superior over LA-MC-ICP-MS|OES, which is limited by its lower sensitivity. Moreover, LASS-ICP-MS offers trace element analysis down to the μg g{sup −1}-range for more than 28 elements due to lower limits of detection, and with typical uncertainties better than 15%. For in situ

  11. Development of routines for simultaneous in situ chemical composition and stable Si isotope ratio analysis by femtosecond laser ablation inductively coupled plasma mass spectrometry

    International Nuclear Information System (INIS)

    Frick, Daniel A.; Schuessler, Jan A.; Blanckenburg, Friedhelm von

    2016-01-01

    Stable metal (e.g. Li, Mg, Ca, Fe, Cu, Zn, and Mo) and metalloid (B, Si, Ge) isotope ratio systems have emerged as geochemical tracers to fingerprint distinct physicochemical reactions. These systems are relevant to many Earth Science questions. The benefit of in situ microscale analysis using laser ablation (LA) over bulk sample analysis is to use the spatial context of different phases in the solid sample to disclose the processes that govern their chemical and isotopic compositions. However, there is a lack of in situ analytical routines to obtain a samples' stable isotope ratio together with its chemical composition. Here, we evaluate two novel analytical routines for the simultaneous determination of the chemical and Si stable isotope composition (δ 30 Si) on the micrometre scale in geological samples. In both routines, multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) is combined with femtosecond-LA, where stable isotope ratios are corrected for mass bias using standard-sample-bracketing with matrix-independent calibration. The first method is based on laser ablation split stream (LASS), where the laser aerosol is split and introduced simultaneously into both the MC-ICP-MS and a quadrupole ICP-MS. The second method is based on optical emission spectroscopy using direct observation of the MC-ICP-MS plasma (LA-MC-ICP-MS|OES). Both methods are evaluated using international geological reference materials. Accurate and precise Si isotope ratios were obtained with an uncertainty typically better than 0.23‰, 2SD, δ 30 Si. With both methods major element concentrations (e.g., Na, Al, Si, Mg, Ca) can be simultaneously determined. However, LASS-ICP-MS is superior over LA-MC-ICP-MS|OES, which is limited by its lower sensitivity. Moreover, LASS-ICP-MS offers trace element analysis down to the μg g −1 -range for more than 28 elements due to lower limits of detection, and with typical uncertainties better than 15%. For in situ

  12. MBO3: Eu3+ at the rate SiO2 (M = Y, Gd and Al) nano down conversion phosphors with superior asymmetric ratio and colour purity as spectral converters for c-Si solar cells

    International Nuclear Information System (INIS)

    Rambabu, U.; Munirathnam, N.R.; Prakash, T.L.

    2013-01-01

    Y 1-x BO 3 :Eu x 3+ (0.07 ≤ x ≤ 0.5 mol) and Y 0.72x (Gd x , Al x )BO 3 : Eu 3+ 0.3 (0.05 ± x ± 0.3 mol) powder phosphors have been synthesized by a novel co-precipitation technique followed by heat treatment. Luminescence optimization was done: by optimizing the dopant Eu 3+ -concentration, substitution of Y 3+ with Gd 3+ /Al 3+ and finally with SiO 2 shell coating. Due to nanosize particle distribution, the optimum activator (Eu 3+ ) concentration (30 mol %) was found to be extremely at higher level, compared to the bulk phosphors. The asymmetric ratio (Red/Orange) and color purity of the optimized phosphors, Y 0.7 BO 3 :Eu 0.3 3+ (with crystallite size, D = 32 nm) and Y 0.3 Gd 0.2 Al 0.2 BO 3 :Eu 3+ (D = 17 nm) were further enhanced with SiO 2 shell coating. Based on the systematic study, the nanophosphor Y 0.7 BO 3 :Eu 0.3 3+ at the rate SiO 2 with R/O ratio as 6.710 and color coordinates (x = 0.6612, y = 0.3357) was optimized as a remarkable phosphor having superior features for its application in thin transparent form as DC layer to improve the energy conversion efficiency of c-Si solar cells

  13. The effect of CaO/SiO2 molar ratio of CaO-Al2O3-SiO2 glasses on their structure and reactivity in alkali activated system.

    Science.gov (United States)

    Kucharczyk, Sylwia; Sitarz, Maciej; Zajac, Maciej; Deja, Jan

    2018-04-05

    The influence of CaO/SiO 2 molar ratio of calcium aluminosilicate glasses on resulting structure and reactivity was investigated. Chemical compositions of glasses were chosen to mimic the composition of the fly ash and slag amorphous phase. Understanding the reactivity of these materials is of high importance allowing further development of the composite cements to limit the environmental footprint of cement industry. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy were employed to examine the structure of glasses. Reactivity of the glasses was analyzed on paste samples after 1, 2, 7, 28 and 90days of curing by means of thermogravimetry (TGA), X-ray diffraction (XRD) and FTIR. Spectroscopic results emphasize dependence of the structure on the chemical composition of the glasses. The higher CaO/SiO 2 the more depolymerized the glass network is, though there is no direct correlation with the reactivity. Significant differences in reactivity is observed primarily between the glasses of peraluminous (CaO/Al 2 O 3 1). Amongst the pastes made of glasses of percalcic region a higher degree of reaction at later ages is observed for the paste containing glass of lower CaO/SiO 2 molar ratio. This is due to both degree of depolimerization and the nature of these glasses (pozzolanic and hydraulic materials). No difference of degree of reaction has been observed within the glasses of CaO/SiO 2 lower than 1. Copyright © 2018 Elsevier B.V. All rights reserved.

  14. The effect of CaO/SiO2 molar ratio of CaO-Al2O3-SiO2 glasses on their structure and reactivity in alkali activated system

    Science.gov (United States)

    Kucharczyk, Sylwia; Sitarz, Maciej; Zajac, Maciej; Deja, Jan

    2018-04-01

    The influence of CaO/SiO2 molar ratio of calcium aluminosilicate glasses on resulting structure and reactivity was investigated. Chemical compositions of glasses were chosen to mimic the composition of the fly ash and slag amorphous phase. Understanding the reactivity of these materials is of high importance allowing further development of the composite cements to limit the environmental footprint of cement industry. Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy were employed to examine the structure of glasses. Reactivity of the glasses was analyzed on paste samples after 1, 2, 7, 28 and 90 days of curing by means of thermogravimetry (TGA), X-ray diffraction (XRD) and FTIR. Spectroscopic results emphasize dependence of the structure on the chemical composition of the glasses. The higher CaO/SiO2 the more depolymerized the glass network is, though there is no direct correlation with the reactivity. Significant differences in reactivity is observed primarily between the glasses of peraluminous (CaO/Al2O3 1). Amongst the pastes made of glasses of percalcic region a higher degree of reaction at later ages is observed for the paste containing glass of lower CaO/SiO2 molar ratio. This is due to both degree of depolimerization and the nature of these glasses (pozzolanic and hydraulic materials). No difference of degree of reaction has been observed within the glasses of CaO/SiO2 lower than 1.

  15. Physical and thermal behaviour of Sr-La-Al-B-Si based SOFC glass sealants as function of SrO content and B2O3/SiO2 ratio in the matrix

    Science.gov (United States)

    Ojha, Prasanta Kumar; Rath, S. K.; Chongdar, T. K.; Gokhale, N. M.; Kulkarni, A. R.

    2011-05-01

    A series of SOFC glass sealants with composition SrO (x), La2O3 (15), Al2O3 (15), B2O3 (40 - x), and SiO2 (30) [x = 10, 15, 20, 25 and 30] (wt.%) [SLABS] are investigated for their structure property correlations at different compositions. Quantitative Fourier transform infrared spectroscopy shows structural rigidity with increasing SrO content, as demonstrate by an increase in the Si-O-Si/O-Si-O bending and B-O-B stretching frequencies. The role of SrO as a modifier dominates the control of the structure and behaviour of glasses compared with the effect of network formers, i.e., the B2O3/SiO2 ratio. Consequent to the structural changes, increasing substitution of B2O3 by SrO the glasses causes increases in the density, glass transition temperature and dilatometric softening point. On the other hand, the crystallization temperatures show a decreasing trend and the coefficient of thermal expansion increases with increase in substitution.

  16. Correlations between atomic structure and giant magnetoresistance ratio in Co2(Fe,Mn)Si spin valves

    International Nuclear Information System (INIS)

    Lari, L; Sizeland, J; Gilks, D; Uddin, G M; Nedelkoski, Z; Hasnip, P J; Lazarov, V K; Yoshida, K; Galindo, P L; Sato, J; Oogane, M; Ando, Y; Hirohata, A

    2014-01-01

    We show that the magnetoresistance of Co 2 Fe x Mn 1−x Si-based spin valves, over 70% at low temperature, is directly related to the structural ordering in the electrodes and at the electrodes/spacer (Co 2 Fe x Mn 1−x Si/Ag) interfaces. Aberration-corrected atomic resolution Z-contrast scanning transmission electron microscopy of device structures reveals that annealing at 350 °C and 500 °C creates partial B2/L2 1 and fully L2 1 ordering of electrodes, respectively. Interface structural studies show that the Ag/Co 2 Fe x Mn 1−x Si interface is more ordered compared to the Co 2 Fe x Mn 1−x Si/Ag interface. The release of interface strain is mediated by misfit dislocations that localize the strain around the dislocation cores, and the effect of this strain is assessed by first principles electronic structure calculations. This study suggests that by improving the atomic ordering and strain at the interfaces, further enhancement of the magnetoresistance of CFMS-based current-perpendicular-to-plane spin valves is possible. (fast track communication)

  17. Experimental evaluation of the effect of compression ratio on performance and emission of SI engine fuelled with gasoline and n-butanol blend at different loads

    Directory of Open Access Journals (Sweden)

    Rinu Thomas

    2016-09-01

    Full Text Available Never ending demand for efficient and less polluting engines have always inspired newer technologies. Extensive study has been done on variable compression ratio, a promising in-cylinder technology, in the recent past. The present work is an experimental investigation to examine the variation of different parameters such as brake thermal efficiency, exhaust gas temperature and emissions with respect to change in compression ratio in a single-cylinder carbureted SI engine at different loads with two different fuels. Experiments were conducted at three different compression ratios (CR = 7:1, 8.5:1 and 10:1. The fuels used in this study are pure gasoline and 20% n-butanol blend (B20 in gasoline. The results showed that brake thermal efficiency increases with CR at all loads. Further, the experimental results showed the scope of improving the part-load efficiency of SI engine by adopting the concept of variable compression ratio (VCR technology, especially when fuels with better anti-knock characteristics are used. The uncertainty analysis of the experiments based on the specifications of the equipment used is also tabulated.

  18. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  19. Effective role of CaO/P2O5 ratio on SiO2-CaO-P2O5 glass system

    Directory of Open Access Journals (Sweden)

    P. Kiran

    2017-05-01

    Full Text Available In the present work, the effect of the CaO/P2O5 ratio on the composition of sol-gel synthesized 58SiO2-(19 − xP2O5–(23 + xCaO (x = 0, 5, 10 and 15 mol% glass samples was studied. Further, the effect of NBO/BO ratio on hydroxy carbonated apatite layer (HCA forming ability based on dissolution behavior in simulated body fluid (SBF solution was also investigated. CaO/P2O5 ratios of synthesized glass samples were 1.2, 2, 3.6, and 9.5, respectively. NBO/BO ratios were obtained using Raman spectroscopic analysis as 0.58, 1.20, 1.46, and 1.78, respectively. All samples were soaked in the SBF solution for 7 days. The calculated weight losses of these samples were 58%, 64%, 83%, and 89% for corresponding NBO/BO ratios. The increase in CaO/P2O5 ratio increases the NBO/BO ratios. However, the increase in NBO/BO ratio increases HCA forming ability of SBF treated samples. The HCA crystalline layer formation was confirmed through X-ray Diffraction (XRD, Transmission Electron Microscopy (TEM, Scanning Electron Microscopy (SEM, Raman and Infrared spectroscopic analysis. Higher CaO/P2O5 ratio favors the increase in HCA formation for SBF treated calcium phospho silicate glasses.

  20. Influence of N2/Ar Flow Ratio on Microstructure and Properties of the AlCrSiN Coatings Deposited by High-Power Impulse Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Bai-Song Li

    2017-12-01

    Full Text Available The cutting properties of tools can be greatly improved by AlCrSiN coatings. The AlCrSiN coatings with nitrogen content in the range of 28.2–56.3 at.% were prepared by varying the N2/Ar flow ratio from 1/4 to 1/1. The influence of N2/Ar flow ratio on composition, microstructure, and mechanical properties, as well as the tribological properties, of the coatings was investigated. With increasing N content, the coating microstructure gradually evolved from single fcc-(Cr,AlN (200 phase to the mixture of fcc-(Cr,AlN and hcp-(Cr,AlN phase, which corresponds to an increased crystallinity within the coatings. The coating presents the highest hardness and best wear resistance for an N2/Ar flow ratio of 1/1, but the film adhesive strength and inner stress decreased obviously with increasing N2/Ar flow ratio, which was attributed to the rapid reduction of particle kinetic energy induced by the obstruction of neutral nitride particles between target and substrates. The highest H3/E*2 value exhibited the lowest wear rate, at 0.81 × 10−14 m3/(N·m, indicating that it had the best resistance to plastic deformation. The main wear mechanisms of the as-deposited coatings were abrasive wear and adhesive wear. The increasing crystallinity of the interior coatings resulted in higher hardness and better tribological behavior with an increase in N2/Ar flow ratio.

  1. Volcanic SO2 and SiF4 visualization using 2-D thermal emission spectroscopy – Part 1: Slant-columns and their ratios

    Directory of Open Access Journals (Sweden)

    M. Grutter

    2012-02-01

    Full Text Available The composition and emission rates of volcanic gas plumes provide insight of the geologic internal activity, atmospheric chemistry, aerosol formation and radiative processes around it. Observations are necessary for public security and the aviation industry. Ground-based thermal emission infrared spectroscopy, which uses the radiation of the volcanic gas itself, allows for continuously monitoring during day and night from a safe distance. We present measurements on Popocatépetl volcano based on thermal emission spectroscopy during different campaigns between 2006–2009 using a Scanning Infrared Gas Imaging System (SIGIS. The experimental set-up, measurement geometries and analytical algorithms are described. The equipment was operated from a safe distance of 12 km from the volcano at two different spectral resolutions: 0.5 and 4 cm−1. The 2-dimensional scanning capability of the instrument allows for an on-line visualization of the volcanic SO2 plume and its animation. SiF4 was also identified in the infrared spectra recorded at both resolutions. The SiF4/SO2 molecular ratio can be calculated from each image and used as a highly useful parameter to follow changes in volcanic activity. A small Vulcanian eruption was monitored during the night of 16 to 17 November 2008 and strong ash emission together with a pronounced SO2 cloud was registered around 01:00 a.m. LST (Local Standard Time. Enhanced SiF4/SO2 ratios were observed before and after the eruption. A validation of the results from thermal emission measurements with those from absorption spectra of the moon taken at the same time, as well as an error analysis, are presented. The inferred propagation speed from sequential images is used in a subsequent paper (Part 2 to calculate the emission rates at different distances from the crater.

  2. Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

  3. UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio > 107

    Science.gov (United States)

    kumar, Sandeep; Pratiyush, Anamika Singh; Dolmanan, Surani B.; Tripathy, Sudhiranjan; Muralidharan, Rangarajan; Nath, Digbijoy N.

    2017-12-01

    We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector with a photo-to-dark current ratio of >107. The Ti/Al/Ni/Au metal stack was evaporated and thermal annealed rapidly for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface, while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. A spectral responsivity (SR) of 32.9 A/W at 367 nm was measured at 5 V. A very high photo-to-dark current ratio of >107 was measured at a bias of 20 V. The photo-to-dark current ratio at a fixed bias was found to be decreasing with an increase in the recess length of photodetectors. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current of < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated, and carrier lifetimes were estimated which matched well with those reported elsewhere.

  4. Performance and emission characteristics of LPG powered four stroke SI engine under variable stroke length and compression ratio

    International Nuclear Information System (INIS)

    Ozcan, Hakan; Yamin, Jehad A.A.

    2008-01-01

    A computer simulation of a variable stroke length, LPG fuelled, four stroke, single cylinder, water cooled spark ignition engine was done. The engine capacity was varied by varying the stroke length of the engine, which also changed its compression ratio. The simulation model developed was verified with experimental results from the literature for both constant and variable stroke engines. The performance of the engine was simulated at each stroke length/compression ratio combination. The simulation results clearly indicate the advantages and utility of variable stroke engines in fuel economy and power issues. Using the variable stroke technique has significantly improved the engine's performance and emission characteristics within the range studied. The brake torque and power have registered an increase of about 7-54% at low speed and 7-57% at high speed relative to the original engine design and for all stroke lengths and engine speeds studied. The brake specific fuel consumption has registered variations from a reduction of about 6% to an increase of about 3% at low speed and from a reduction of about 6% to an increase of about 8% at high speed relative to the original engine design and for all stroke lengths and engine speeds studied. On the other hand, an increase of pollutants of about 0.65-2% occurred at low speed. Larger stroke lengths resulted in a reduction of the pollutants level of about 1.5% at higher speeds. At lower stroke lengths, on the other hand, an increase of about 2% occurred. Larger stroke lengths resulted in increased exhaust temperature and, hence, make the exhaust valve work under high temperature

  5. Transparent sculptured titania films for enhanced light absorption in thin-film Si solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Kai-Hsiang, E-mail: khhung@itri.org.tw [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chiou, Guan-Di; Wong, Ming-Show [Department of Materials Science and Engineering, National Dong Hwa University, Hualien, Taiwan (China); Wang, Yu-Chih [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Chung, I-Shan [Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China)

    2011-12-30

    This study presents a description of the enhancement of light absorption in thin-film silicon (Si) solar cells by using sculptured titania (TiO{sub 2}) films. We used an electron-beam evaporation system with a glancing angle deposition (GLAD) method to deposit porous TiO{sub 2} films on fluorine-doped SnO{sub 2} (FTO) substrates. The GLAD TiO{sub 2}/FTO films were used as conductive electrodes in hydrogenated microcrystalline silicon ({mu}c-Si:H) solar cells. Transmission electron microscopy revealed that the GLAD TiO{sub 2} films are composed of sculptured nano-pillars on an FTO surface, and this nanostructure provides a synergistic route for light scattering enhancement. The GLAD TiO{sub 2}/FTO exhibited a 68% improvement of optical haze (at {lambda} = 600 nm). The {mu}c-Si:H solar cells consisting of the GLAD-nanostructured TiO{sub 2} resulted in a 5% improvement of short-circuit current (J{sub sc}) and yielded a cell efficiency of 6.6%.

  6. Radioisotopic Study of Methanol Transformation over H- and Fe-Beta Zeolites; Influence of Si/Al Ratio on Distribution of Products

    International Nuclear Information System (INIS)

    Sarkadi-Priboczki, E.; Kovacs, Z.; Kumar, N.; Murzin, D.Yu.

    2006-01-01

    Complete text of publication follows. The acid-basic properties of Beta zeolite can be modified by dealumination and/or ionexchange. The wide-pore H-Beta zeolite has strong Bronsted acid sites and other chemical environment which govern adsorption and conversion of methanol to dimethyl ether and hydrocarbons during catalysis [1-2]. Partly Fe-ion-exchanged Beta i.e. Fe-H-Beta zeolite keeps this behavior to a certain extent; however, the presence of Fe ions can modify the reaction pathway. In the present work, the methanol conversion was studied over H- and Fe-Beta zeolites at two different Si/Al ratios. 11 C-methanol was used to follow-up adsorption as well as desorption of methanol and its derivates. Therefore, a radioactivity detector was integrated to the gas chromatograph for exact identification of the labelled methanol and its derivates. H-Beta and Fe-Beta zeolites were applied at two different Si/Al ratios i.e. H-Beta(25) and H-Beta(300) and Fe-H-Beta(25) and Fe- H-Beta (300), respectively. A glass tube fixed-bed reactor was used as a closed static reactor. The 11 C-radioisotope (T 1/2 =20.4 min) was produced in 11 C-labelled carbon dioxide form by cyclotron. The 11 C-methanol tracer was produced by radiochemical process [3]. The mixture of 11 C-methanol and non-radioactive methanol was then introduced into zeolite by He gas flow. The volatile products of catalytic conversion of 11 C-methanol were analyzed by radio-gas chromatography (gas chromatograph with flame ionization detector (FID) coupled on-line with a radioactivity detector). The methanol conversion rate and product selectivities to dimethyl ether, hydrocarbons (methane, C 2 -C 6 olefins and paraffins), formaldehyde and carbon-oxides were measured and calculated over H- and Fe-Beta zeolites at two different Si/Al ratios at 250 and 350 deg C. Over H-Beta(25) C 2 -C 6 hydrocarbons (mostly as alkanes) with high conversion rate and some dimethyl ether were detected due to presence of strong Bronsted

  7. Study of ignition in a high compression ratio SI (spark ignition) methanol engine using LES (large eddy simulation) with detailed chemical kinetics

    International Nuclear Information System (INIS)

    Zhen, Xudong; Wang, Yang

    2013-01-01

    Methanol has been recently used as an alternative to conventional fuels for internal combustion engines in order to satisfy some environmental and economical concerns. In this paper, the ignition in a high compression ratio SI (spark ignition) methanol engine was studied by using LES (large eddy simulation) with detailed chemical kinetics. A 21-species, 84-reaction methanol mechanism was adopted to simulate the auto-ignition process of the methanol/air mixture. The MIT (minimum ignition temperature) and MIE (minimum ignition energy) are two important properties for designing safety standards and understanding the ignition process of combustible mixtures. The effects of the flame kernel size, flame kernel temperature and equivalence ratio were also examined on MIT, MIE and IDP (ignition delay period). The methanol mechanism was validated by experimental test. The simulated results showed that the flame kernel size, temperature and energy dramatically affected the values of the MIT, MIE and IDP for a methanol/air mixture, the value of the ignition delay period was not only related to the flame kernel energy, but also to the flame kernel temperature. - Highlights: • We used LES (large eddy simulation) coupled with detailed chemical kinetics to simulate methanol ignition. • The flame kernel size and temperature affected the minimum ignition temperature. • The flame kernel temperature and energy affected the ignition delay period. • The equivalence ratio of methanol–air mixture affected the ignition delay period

  8. Formation of copper nanoparticles in mordenite s with variable SiO{sub 2}/Al{sub 2}O{sub 3} molar ratios under redox treatments

    Energy Technology Data Exchange (ETDEWEB)

    Petranovskii, V.; Avalos, M. [UNAM, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, 22800 Ensenada, Baja California (Mexico); Stoyanov, E. [University of California, Department of Chemistry, Riverside, 92521 California (United States); Gurin, V. [Belarusian State University, Research Institute for Physical Chemical Problems, Minsk 220080 (Belarus); Katada, N. [Tottori University, Department of Chemistry and Biotechnology, Tottori 680-8552 (Japan); Hernandez, M. A. [Benemerita Universidad Autonoma de Puebla, Departamento de Investigacion en Zeolitas, Ciudad Universitaria, Puebla (Mexico); Pestryakov, A. [Tomsk Polytechnic University, Tomsk 634050 (Russian Federation); Chavez R, F.; Zamorano U, R. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Zacatenco, 07738 Mexico D. F. (Mexico); Portillo, R., E-mail: vitalii@cnyn.unam.mx [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias Quimicas, Ciudad Universitaria, Puebla (Mexico)

    2013-05-01

    A series of protonated copper-containing mordenite s with different SiO{sub 2}/Al{sub 2}O{sub 3} molar ratios (MR) in the range of 10{<=}MR{<=}206 was prepared by ion exchange in copper nitrate aqueous solution. The electron paramagnetic resonance of hydrated copper Mordenite s series testifies of several Cu{sup 2+} ion sites. Hydrogen reduction of copper ions incorporated into the mordenite s was shown to lead to different reduced copper species including small metallic particles inter alia. The structural properties and acidity of mordenite s were characterized. The optical appearance of the copper particles showed strong but nonmonotonic dependence on the MR value, in line with the variation in acidity of this series of mordenite s. Correlations between mordenite properties and the formation of different reduced copper species are discussed. (Author)

  9. Effect of aqueous Si/Mg ratio and pH on the nucleation and growth of sepiolite at 25 °C

    Science.gov (United States)

    Baldermann, Andre; Mavromatis, Vasileios; Frick, Paula M.; Dietzel, Martin

    2018-04-01

    Sepiolite [Mg4Si6O15(OH)2·6H2O] is a trioctahedral 2:1 Mg-silicate that has been often used to reconstruct the evolution of sedimentary environments and facies in the geological record. To date, however, the reaction paths underlying sepiolite formation are poorly constrained and most of the existing models are based on empirical observations. In order to shed light on the mechanisms controlling the formation of this mineral phase, in the present study, sepiolite was precipitated at 25 ± 1 °C from modified seawater and MgCl2 solutions undersaturated with respect to brucite and amorphous silica. Although a suite of hydrous Mg-silicates, such as kerolite, saponite, stevensite and talc, were oversaturated in the solutions at a higher level relative to sepiolite at any time of reaction, poorly crystallized, aluminous sepiolite was the only precipitate after 91 days. The precipitated sepiolite [Mg3.4-3.8Al0.1-0.4)∑3.8-3.9(Si5.9-6.0Al0-0.1)O15(OH)2·nH2O] shares a number of structural and chemical similarities with natural sepiolite, such as a fibrous crystal shape and an atomic Si/(Si + Mg+Al) ratio of ∼0.61. The proposed reaction path for the formation of sepiolite is based on the temporal evolution of the chemical compositions of the experimental solution and solids: (i) Nucleation and growth of Al-sepiolite occurred during the first 8 days of the experimental runs via condensation and polymerization of Sisbnd OH tetrahedra onto Mg-Al-O-OH template sheets at a precipitation rate of ∼2.19 ± 0.01 × 10-10 mol s-1. (ii) At decreasing pH and in the absence of [Al]aq this intermediate phase transformed into aluminous sepiolite at a slower crystal growth rate of ∼1.08 ± 0.02 × 10-12 mol s-1. This finding explains the high abundances of sepiolite in highly alkaline, evaporitic, lacustrine and soil environments, where the growth rates of sepiolite are considered faster (10-11 to 10-10 mol s-1, Brady, 1992). We propose that (i) low rates of Mg2+ ion dehydration

  10. Phase diagram study for the PbO-ZnO-CaO-SiO{sub 2} -“Fe{sub 2}O{sub 3} ” system in air with CaO/SiO{sub 2} in 1.1 and PbO/(CaO+SiO{sub 2}) in 2.4 weight ratios

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Rodriguez, Josue; Romero-Serrano, Antonio; Hernandez-Ramirez, Aurelio; Cruz-Ramirez, Alejandro, E-mail: romeroipn@hotmail.com [Instituto Politecnico Nacional-ESIQIE, Zacatenco, Mexico City (Mexico); Almaguer-Guzman, Isaias; Benavides-Perez, Ricardo; Flores-Favela, Manuel [Servicios Administrativos Penoles S.A de C.V., Torreon, Coahuila (Mexico)

    2017-07-15

    An experimental study on the phase equilibrium and the liquidus isotherms for the PbO-ZnO-CaO-SiO{sub 2} -“Fe{sub 2}O{sub 3} ” system with CaO/SiO{sub 2} in 1.1 and PbO/(CaO+SiO{sub 2}) in 2.4 weight ratios, respectively, was carried out in the temperature range 1100-1300 deg C (1373-1573 K). High temperature phases were determined by the equilibrium-quenching method. Results are presented in the form of pseudo-ternary sections “Fe{sub 2}O{sub 3} ”-ZnO-(PbO+CaO+SiO{sub 2}). X-Ray diffraction (XRD) and SEM-EDS results showed that the phase equilibria in this system are dominated by the high melting temperature spinel and zincite phases. It was observed that if the system is at a temperature below 1300 deg C and the total (Fe{sub 2}O{sub 3} + ZnO) is greater than 20 wt%, spinel and/or zincite will be present in the slag system. As an application of the phase diagram, the liquid phase compositions below the liquidus surface were estimated, then their viscosities were calculated using FACTSage software. (author)

  11. Phase diagram study for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system in air with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios

    International Nuclear Information System (INIS)

    Lopez-Rodriguez, Josue; Romero-Serrano, Antonio; Hernandez-Ramirez, Aurelio; Cruz-Ramirez, Alejandro; Almaguer-Guzman, Isaias; Benavides-Perez, Ricardo; Flores-Favela, Manuel

    2017-01-01

    An experimental study on the phase equilibrium and the liquidus isotherms for the PbO-ZnO-CaO-SiO_2 -“Fe_2O_3 ” system with CaO/SiO_2 in 1.1 and PbO/(CaO+SiO_2) in 2.4 weight ratios, respectively, was carried out in the temperature range 1100-1300 deg C (1373-1573 K). High temperature phases were determined by the equilibrium-quenching method. Results are presented in the form of pseudo-ternary sections “Fe_2O_3 ”-ZnO-(PbO+CaO+SiO_2). X-Ray diffraction (XRD) and SEM-EDS results showed that the phase equilibria in this system are dominated by the high melting temperature spinel and zincite phases. It was observed that if the system is at a temperature below 1300 deg C and the total (Fe_2O_3 + ZnO) is greater than 20 wt%, spinel and/or zincite will be present in the slag system. As an application of the phase diagram, the liquid phase compositions below the liquidus surface were estimated, then their viscosities were calculated using FACTSage software. (author)

  12. Optimization of NaOH Molarity, LUSI Mud/Alkaline Activator, and Na2SiO3/NaOH Ratio to Produce Lightweight Aggregate-Based Geopolymer

    Directory of Open Access Journals (Sweden)

    Rafiza Abdul Razak

    2015-05-01

    Full Text Available This paper presents the mechanical function and characterization of an artificial lightweight geopolymer aggregate (ALGA using LUSI (Sidoarjo mud and alkaline activator as source materials. LUSI stands for LU-Lumpur and SI-Sidoarjo, meaning mud from Sidoarjo which erupted near the Banjarpanji-1 exploration well in Sidoarjo, East Java, Indonesia on 27 May 2006. The effect of NaOH molarity, LUSI mud/Alkaline activator (LM/AA ratio, and Na2SiO3/NaOH ratio to the ALGA are investigated at a sintering temperature of 950 °C. The results show that the optimum NaOH molarity found in this study is 12 M due to the highest strength (lowest AIV value of 15.79% with lower water absorption and specific gravity. The optimum LUSI mud/Alkaline activator (LM/AA ratio of 1.7 and the Na2SiO3/NaOH ratio of 0.4 gives the highest strength with AIV value of 15.42% with specific gravity of 1.10 g/cm3 and water absorption of 4.7%. The major synthesized crystalline phases were identified as sodalite, quartz and albite. Scanning Electron Microscope (SEM image showed more complete geopolymer matrix which contributes to highest strength of ALGA produced.

  13. Optimization of NaOH Molarity, LUSI Mud/Alkaline Activator, and Na2SiO3/NaOH Ratio to Produce Lightweight Aggregate-Based Geopolymer

    Science.gov (United States)

    Abdul Razak, Rafiza; Abdullah, Mohd Mustafa Al Bakri; Hussin, Kamarudin; Ismail, Khairul Nizar; Hardjito, Djwantoro; Yahya, Zarina

    2015-01-01

    This paper presents the mechanical function and characterization of an artificial lightweight geopolymer aggregate (ALGA) using LUSI (Sidoarjo mud) and alkaline activator as source materials. LUSI stands for LU-Lumpur and SI-Sidoarjo, meaning mud from Sidoarjo which erupted near the Banjarpanji-1 exploration well in Sidoarjo, East Java, Indonesia on 27 May 2006. The effect of NaOH molarity, LUSI mud/Alkaline activator (LM/AA) ratio, and Na2SiO3/NaOH ratio to the ALGA are investigated at a sintering temperature of 950 °C. The results show that the optimum NaOH molarity found in this study is 12 M due to the highest strength (lowest AIV value) of 15.79% with lower water absorption and specific gravity. The optimum LUSI mud/Alkaline activator (LM/AA) ratio of 1.7 and the Na2SiO3/NaOH ratio of 0.4 gives the highest strength with AIV value of 15.42% with specific gravity of 1.10 g/cm3 and water absorption of 4.7%. The major synthesized crystalline phases were identified as sodalite, quartz and albite. Scanning Electron Microscope (SEM) image showed more complete geopolymer matrix which contributes to highest strength of ALGA produced. PMID:26006238

  14. Effect of SiO2/Al2O3 Ratio on Micro-Mesopore Formation for Pt/Beta-MCM-41 via NaOH Treatment and the Catalytic Performance in N-heptane Hydro isomerization

    Science.gov (United States)

    Gao, Li; Shi, Zhiyuan; Liu, Yingming; Zhao, Yuanshou; Liu, Qinghua; Xu, Chengguo; Bai, Peng; Yan, Zifeng

    2018-01-01

    Micro-mesoporous composite material Beta-MCM-41(BM) were hydrothermally synthesized by treating parent beta with molar SiO2/Al2O3 ratios of 12.5, 20 and 30 as precursors. The influence of SiO2/Al2O3 ratio of zeolite beta on effective micro-mesoporous composite formation was studied by investigating the crystallinity, morphology, chemical composition, acidity and textural property of Beta-MCM-41 through XRD, nitrogen adsorption, SEM, TEM, NH3-TPD, FTIR and Pyridine-FTIR. The catalytic performance was evaluated in terms of n-heptane hydro isomerization. The results demonstrated that Beta-MCM-41 supported Pt catalysts showed higher selectivity to isoheptanes than Pt/Beta. It was attributed to the superiorities of the pore structure and mesoporous accelerated the diffusion of larger molecules of isoheptanes.

  15. Experimental Determination of the Effect of the Ratio of B/Al on Glass Dissolution along the Nepheline (NaAlSiO4) – Malinkoite (NaBSiO4) Join

    Energy Technology Data Exchange (ETDEWEB)

    Pierce, Eric M; Reed, Lunde R; Shaw, Wendy J; McGrail, B Peter; Icenhower, Jonathan P; Windisch, Charles F; Cordova, Elsa A; Broady, Johnathan W

    2010-03-27

    The dissolution kinetics of five glasses along the NaAlSiO4-NaBSiO4 join were used to evaluate how the structural variations associated with boron-aluminum substitution affect the rate of dissolution. The composition of each glass varied inversely in mol% of Al2O3 (5 to 25 mol%) and B2O3 (20 to 0 mol%) with Na2O (25 mol%) and SiO2 (50 mol%) making up the remaining amount, in every case Na/(Al+B) = 1.0. Single-pass flow-through experiments (SPFT) were conducted under dilute conditions as a function of solution pH (from 7.0 to 12.0) and temperature (from 23° to 90°C). Analysis by 27Al and 29Si MAS-NMR suggests Al (~98% [4]Al) and Si atoms (~100% [4]Si) occupy a tetrahedral coordination whereas, B atoms occupy both tetrahedral ([4]B) and trigonal ([3]B) coordination. The distribution of [3]B fractionated between [3]B(ring) and [3]B(non-ring) moieties, with the [3]B(ring)/[3]B(non-ring) ratio increases with the B/Al ratio. The MAS-NMR results also indicated an increase in the fraction of [4]B with an increase in the B/Al ratio. But despite the changes in the B/Al ratio and B coordination, the 29Si spectra maintain a chemical shift between -88 to -84 ppm for each glass. Unlike the 29Si spectra, the 27Al resonances shift to more positive values with an increase in the B/Al ratio which suggests mixing between the [4]Al and [3]B sites, assuming avoidance between tetrahedral trivalent cations ([4]Al-O-[4]B avoidance). Raman spectroscopy was use to augment the results collected from MAS-NMR and demonstrated that NeB4 (glass sample with the highest B content) was glass-glass phase separated (e.g., heterogeneous glass). Results from SPFT experiments suggest a forward rate of reaction and pH power law

  16. Effect of molar ratios of MgO/Al{sub 2}O{sub 3} on the sintering behavior and thermal shock resistance of MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Dong, E-mail: 1078155409@qq.com [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Luo, Xudong, E-mail: luoxudongs@aliyun.com [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, Guodong [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Xie, Zhipeng [Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2017-01-01

    In order to determine the relationship between the property of MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics and molar ratios of MgO/Al{sub 2}O{sub 3}, especially the sintering behavior and thermal shock resistance, the MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics were fabricated with micro-size MgO, Al{sub 2}O{sub 3} powder and nano-size SiO{sub 2} as main raw materials. The sample was characterized by phase analysis, densification and thermal shock times. Moreover, field emission scanning electron microscope was also conducted to study microstructure of the samples before and after thermal shock. Effect of different molar ratios of MgO/Al{sub 2}O{sub 3} on the sintering behavior and thermal shock resistance of composite ceramics were investigated. The results showed that the sample possess better sintering behavior and thermal shock resistance with the molar ratio of MgO/Al{sub 2}O{sub 3} equal to 2/1. Grains of periclase and spinel were directly bonded together, resulting in a dense and compact microstructure, and the bulk density of obtained sample reached 3.4 g/cm{sup 3}. The microstructure of sample after thermal shock revealed that the crack propagation path was deflected and bifurcated, the main-crack propagation was restricted and more fracture energy was consumed, the thermal shock resistance of composite ceramics was greatly improved. - Highlights: • Effect of MgO/Al{sub 2}O{sub 3} on the composite ceramic was firstly researched with 1 mol% SiO{sub 2}. • Microcracks for a short distance by interlinking can eliminate the crack propagation. • The composite ceramic have optimal synthetic property with MgO/Al{sub 2}O{sub 3} was 2/1.

  17. Effect of Y2O3-Al2O3 ratio on inter-granular phases and films in tape-casting α-SiC with high toughness

    International Nuclear Information System (INIS)

    Huang Rong; Gu Hui; Zhang Jingxian; Jiang Dongliang

    2005-01-01

    Silicon carbide (SiC) ceramics prepared from liquid phase sintering after aqueous-tape-casting can yield high toughness when appropriate amount of Y 2 O 3 -Al 2 O 3 are added, even though no elongated grains are present. Grain boundaries (GB), second-phases and hetero-phase boundaries (HB) in 2 samples with additive mole ratios of 3:5 and 3:7 are investigated using high-resolution and analytical electron microscopy (HREM and AEM). The meta-stable YAlO 3 (YAP) was nucleated from SiC surfaces in the sample with Y/Al = 3:5 as revealed by crystallographic relations across the HB, whilst relatively thick amorphous films were found at GB. In contrary, the higher level of Al 2 O 3 additives decreases the GB film thickness in the sample with Y/Al = 3:7, and the homogeneous nucleation of Y 3 Al 5 O 12 (YAG) occurs at triple pockets accompanying with thick HB films. The strong variation of GB widths is a result of GB wetting in the sample with Y/Al = 3:5 and HB wetting in the sample of Y/Al = 3:7, both by liquid Al 2 O 3 . The energy of GB in the former sample is higher than the energy of HB as exhibited by the preferential nucleation of meta-stable YAP on SiC surfaces, which results in wetting of GB by the liquid; the situation is opposite in the latter sample as the wetting of HB occurs, leading to de-wetting of GB. The thermal mismatch between SiC and YAP or YAG as well as the presence of amorphous films facilitate the creation of micro-crack to promote inter-granular fracture and result in high toughness in both SiC ceramics

  18. Effect of SiO2/B2O3 Ratio on the Crystallization Behavior and Dielectric Properties of Barium Strontium Titanate Glass-Ceramics Prepared by Sol-Gel Process

    Science.gov (United States)

    Chen, Yongzhou; Zhang, Yong; Song, Xiaozhen; Shen, Ziqin; Zhang, Tianyuan

    2018-05-01

    Ferroelectric glass-ceramics, with a basic composition 90 wt.% (Ba0.65Sr0.35)TiO3-10 wt.% (B2O3-nSiO2) (n = 0.5, 1, 3, 5) were synthesized by the sol-gel method and their phase development and dielectric properties were investigated by differential thermal analysis, x-ray diffraction, field emission scanning electron microscopy, dielectric temperature curves and impedance spectroscopy. From the differential thermal analysis, glass transition and crystallization behavior can be observed. From the x-ray diffraction study, two crystalline phases (Ba,Sr)TiO3 and Ba2TiSi2O8 were formed over the entire composition range of the glass-ceramics. In addition, the main crystal phase has undergone a transformation from (Ba,Sr)TiO3 to Ba2TiSi2O8 with the increase of n. A typical structure in which the crystal phase was surrounded by a glassy matrix has been observed in the scanning electron microscope images. As a result of temperature dependent dielectric property measurements, the dielectric constant increased obviously with the increase of n from 0.5 to 1. Further increasing n led to a reduction of the dielectric constant, which is in coincidence with the variation of the intensity of (Ba,Sr)TiO3 phase with n. According to the impedance spectroscopy analysis and the activation energy calculation, the relaxation peak in both Z″ and M″ data should be attributed to the crystal-glass interface, and the change of conduction mechanism with the increase of SiO2/B2O3 ratio may be attributed to the corresponding transition of the main crystal phase.

  19. Crystallization of mordenite zeolite with seed addition in reaction mixtures with different SiO{sub 2}/Al{sub 2}O{sub 3} ratios; Cristalizacao da zeolita mordenita com adicao de sementes em meio reacionais com diferentes razoes SiO{sub 2}/Al{sub 2}O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Cysneiros, O.M.S.; Silva, B.J.B.; Silva, A.O.S.; Alencar, S.L.; Santos, R.B.; Soares, P.F.M.; Mendonca, T.R.D.; Sousa Junior, L.V.; Santos, J.R., E-mail: brunojbarros@hotmail.com [Universidade Federal de Alagoas (UFAL), Maceio (Brazil). Departamento de Engenharia Quimica. Laboratorio de Sintese de Catalisadores

    2016-04-15

    The synthesis of samples of mordenite were performed using the hydrothermal method using two different types of crystallization seed (mordenite and ferrierite), where they were exploited to change some parameters of the synthesis, such as SiO{sub 2}/Al{sub 2}O{sub 3} = 20, 60 and 100 and the ratio OH/SiO{sub 2} = 0.2, 0.3 and 0.4, at different times of crystallization, at a temperature of 170 °C. The samples were characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA/DTA), nitrogen adsorption at -196 °C (BET) and temperature programmed desorption of ammonia (NH{sub 3}-TPD). It was found that the use of the ratio OH/SiO{sub 2} = 0.4, together with the seeds of the most MOR and FER crystalline samples were obtained, demonstrating the critical role of mineralizing agent OH{sup -} in the middle. (author)

  20. Ultra-fast magnetization reversal in magnetic nano-pillars by spin-polarized current

    Energy Technology Data Exchange (ETDEWEB)

    Devolder, T. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France)]. E-mail: thibaut.devolder@ief.u-psud.fr; Tulapurkar, A. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan); Yagami, K. [SSNC, Semiconductor Technology Development Group, SONY Corporation, Atsugi, Kanagawa 243-0014 (Japan); Crozat, P. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France); Chappert, C. [Institut d' Electronique Fondamentale, UMR 8622 CNRS, Universite Paris Sud, Ba-circumflex timent 220, 91405 Orsay (France); Fukushima, A. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan); Suzuki, Y. [NanoElectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568 (Japan); CREST, Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012 (Japan)

    2005-02-01

    We study the speed limitations of the magnetization switching resulting from spin transfer in pillar-shaped CoFe/Cu/CoFe spin valves. The quasi-static critical currents are Ic-=-2mA for the antiparallel (AP) to parallel (P) configuration and Ic+=+4.6mA for the P to AP transition. Current pulses of duration down to 100ps and amplitude of 4I{sub c} trigger switching at 300K. The switching is probabilistic for lower current pulses. The P to AP transition speed is not much temperature dependant from 50 to 300K. In contrast, the AP to P transition is thermally inhibited and is much faster at 150K than at 300K. This thermal inhibition highlights the importance of the macrospin coherency and of the thermally excited spin waves with finite wave vector parallel to the magnetization. Our results validate spin-transfer switching for fast memory applications.

  1. Ultra-fast magnetization reversal in magnetic nano-pillars by spin-polarized current

    International Nuclear Information System (INIS)

    Devolder, T.; Tulapurkar, A.; Yagami, K.; Crozat, P.; Chappert, C.; Fukushima, A.; Suzuki, Y.

    2005-01-01

    We study the speed limitations of the magnetization switching resulting from spin transfer in pillar-shaped CoFe/Cu/CoFe spin valves. The quasi-static critical currents are Ic-=-2mA for the antiparallel (AP) to parallel (P) configuration and Ic+=+4.6mA for the P to AP transition. Current pulses of duration down to 100ps and amplitude of 4I c trigger switching at 300K. The switching is probabilistic for lower current pulses. The P to AP transition speed is not much temperature dependant from 50 to 300K. In contrast, the AP to P transition is thermally inhibited and is much faster at 150K than at 300K. This thermal inhibition highlights the importance of the macrospin coherency and of the thermally excited spin waves with finite wave vector parallel to the magnetization. Our results validate spin-transfer switching for fast memory applications

  2. Nanotextured Si surfaces derived from block-copolymer self-assembly with superhydrophobic, superhydrophilic, or superamphiphobic properties

    DEFF Research Database (Denmark)

    Telecka, Agnieszka; Li, Tao; Ndoni, Sokol

    2018-01-01

    by oxygen plasma treatment. The different texture and surface chemistry configurations are characterized with respect to their wetting properties with water, alkanes and organic oils. While, both nano-pillar and nano-hole surfaces feature excellent superhydrophobic properties with water contact angles (WCAs......) exceeding 170 degrees and roll-off angles below 5 degrees, only the nano-pillar surfaces exhibit convincing superhydrophilicity with WCAs below 5 degrees. The repellency of low surface tension liquids known as amphiphobicity is demonstrated for the nano-hoodoo surfaces....

  3. Effects of Al/P composition ratio on the crystallization of MgO-CaO-Al203-SiO2-P2O5 bioglass-ceramic system

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Shihching; Hon, Minhsiung [National Cheng-Kung Univ., Taiwan (Taiwan, Province of China)

    1993-06-01

    Effects of Al/P composition ratio on the crystallization of apatite and anorthite were investigated by differential thermal analysis ( DTA ) using series of glasses with the nominal composition of 3.0wt% MgO, 35.0wt% CaO, 41.4wt% SiO2 and 20.6wt%(Al2O3+P205). With the decrease of Al/P ratio, the activation energy for apatite crystallization is decreased and the apatite exotherm is shifted to the lower temperature. On the other hand, anorthite crystallized from the specimen surface, the activation energy for anorthite is increased with the decrease of Al/P ratio, however the exotherm is not shifted significantly. Roughly estimated values of Avrami parameters, n, which is related to the directionality of crystal growth, for apatite and anorthite have been 2 and 1 respectively. This had shown that apatite implies bulk crystallization and anorthite signifies surface crystallization. Also the SEM observations of the crystals revealed that there was one dimensional crystal growth for anorthite and spherulitic growth for apatite. 17 refs., 6 figs., 2 tabs.

  4. Characterization by Sem, EDS and micro-Raman of the influence of the molar ratio SiO2/Al2O3 and reduction temperature on the system CuZSM5

    International Nuclear Information System (INIS)

    Chavez R, F.; Rodriguez I, I.; Petranovskii, V.

    2014-01-01

    The morphological and spectroscopic changes caused by reduction of ion-exchanged CuZSM5 samples with SiO 2 /Al 2 O 3 molar ratios (MR) of 30 and 70 in H 2 flow at 150 and 350 grades C are discussed. the nominal copper loading was of 1% by weight. Scanning electron microscopy of CuZSM5 sample set showed that the treatment in reducing atmosphere at 350 grades C produces particle agglomeration and smoother surface texture that treatment at 150 grades C, this effect was more pronounced for the sample with MR 30. Furthermore, the particles corresponding to the sample with MR 30 are of irregular shape and have rough texture (cubic or rectangular crystals, protrusions) while the particles of the sample with MR 70 are in the majority of spherical smooth texture (leaf-shaped crystals/platelet, reclining). Energy Dispersive X-ray spectroscopy elemental analysis reveals a heterogeneous distribution of copper as well other elements in each sample. The micro-Raman spectroscopy shows some changes in the vibrational modes for the studied samples. (Author)

  5. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    International Nuclear Information System (INIS)

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  6. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  7. Golden Ratio

    Indian Academy of Sciences (India)

    Our attraction to another body increases if the body is symmetricaland in proportion. If a face or a structure is in proportion,we are more likely to notice it and find it beautiful.The universal ratio of beauty is the 'Golden Ratio', found inmany structures. This ratio comes from Fibonacci numbers.In this article, we explore this ...

  8. Golden Ratio

    Indian Academy of Sciences (India)

    Keywords. Fibonacci numbers, golden ratio, Sanskrit prosody, solar panel. Abstract. Our attraction to another body increases if the body is symmetricaland in proportion. If a face or a structure is in proportion,we are more likely to notice it and find it beautiful.The universal ratio of beauty is the 'Golden Ratio', found inmany ...

  9. Golden Ratio

    Indian Academy of Sciences (India)

    Our attraction to another body increases if the body is sym- metrical and in proportion. If a face or a structure is in pro- portion, we are more likely to notice it and find it beautiful. The universal ratio of beauty is the 'Golden Ratio', found in many structures. This ratio comes from Fibonacci numbers. In this article, we explore this ...

  10. Effect of the Molar Ratio of B2O3 to Bi2O3 in Al Paste with Bi2O3-B2O3-ZnO Glass on Screen Printed Contact Formation and Si Solar Cell Performance

    Science.gov (United States)

    Kim, Bit-Na; Kim, Hyeong Jun; Chang, Hyo Sik; Hong, Hyun Seon; Ryu, Sung-Soo; Lee, Heon

    2013-10-01

    In this study, eco-friendly Pb-free Bi2O3-B2O3-ZnO glass frits were chosen as an inorganic additive for the Al paste used in Si solar cells. The effects of the molar ratio of Bi2O3 to B2O3 in the glass composition on the electrical resistance of the Al electrode and on the cell performance were investigated. The results showed that as the molar ratio of Bi2O3 to B2O3 increased, the glass transition temperature and softening temperature decreased because of the reduced glass viscosity. In Al screen-printed Si solar cells, as the molar ratio of Bi2O3 to B2O3 increased, the sheet electrical resistance of the Al electrode decreased and the cell efficiency increased. The uniformity and thickness of the back-surface field was significantly influenced by the glass composition.

  11. Sex ratios

    OpenAIRE

    West, Stuart A; Reece, S E; Sheldon, Ben C

    2002-01-01

    Sex ratio theory attempts to explain variation at all levels (species, population, individual, brood) in the proportion of offspring that are male (the sex ratio). In many cases this work has been extremely successful, providing qualitative and even quantitative explanations of sex ratio variation. However, this is not always the situation, and one of the greatest remaining problems is explaining broad taxonomic patterns. Specifically, why do different organisms show so ...

  12. SI Notes.

    Science.gov (United States)

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  13. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2006-01-01

    Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

  14. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    International Nuclear Information System (INIS)

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    International Nuclear Information System (INIS)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Science.gov (United States)

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  17. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    International Nuclear Information System (INIS)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  18. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  19. Magnetic Resonance Signal Intensity Ratio Measurement Before Uterine Artery Embolization

    DEFF Research Database (Denmark)

    Duvnjak, Stevo; Ravn, Pernille; Green, Anders

    2017-01-01

    , 52 patients were included in this prospective study. The SI ratio before UFE was calculated using circular region of interests placed on the dominant fibroid and the iliac muscle. The SI fibroid-to-iliac muscle ratio was calculated as SI of the dominant fibroid/SI of the iliac muscle on T1-, T2......-, and T1 post-contrast-weighted sequences. The dominant fibroid volume was measured and analyzed before and after UFE. RESULTS: In all, 46 patients who completed the three-month follow-up MRI were available for analysis. The correlation between SI fibroid-to-muscle ratio at the T2-weighted sequence...... positive correlation (r = 0.439, p T2-weighted sequence. The area under curve (AUC) for SI fibroid-to-muscle ratio on T2-weighted sequence was 0.776. For the other parameters, the AUC values were 0.512, 0.671, and 0.578, respectively. CONCLUSION: SI...

  20. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Science.gov (United States)

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  1. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  2. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Science.gov (United States)

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  3. m-plane GaN layers grown by rf-plasma assisted molecular beam epitaxy with varying Ga/N flux ratios on m-plane 4H-SiC substrates

    International Nuclear Information System (INIS)

    Armitage, R.; Horita, M.; Suda, J.; Kimoto, T.

    2007-01-01

    A series of m-plane GaN layers with the Ga beam-equivalent pressure (BEP) as the only varied parameter was grown by rf-plasma assisted molecular beam epitaxy on m-plane 4H-SiC substrates using AlN buffer layers. The smoothest growth surfaces and most complete film coalescence were found for the highest Ga BEP corresponding to the Ga droplet accumulation regime. However, better structural quality as assessed by x-ray rocking curves was observed for growth at a lower Ga BEP value below the droplet limit. The variation of rocking curve widths for planes inclined with respect to the epilayer c axis followed a different trend with Ga BEP than those of reflections parallel to the c axis. The GaN layers were found to exhibit a large residual compressive strain along the a axis

  4. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    International Nuclear Information System (INIS)

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  5. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Science.gov (United States)

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  6. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

    2015-01-01

    Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

  7. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Directory of Open Access Journals (Sweden)

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  8. Natural 32Si as environmental tracer

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  9. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    International Nuclear Information System (INIS)

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  11. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  12. Characterization by Sem, EDS and micro-Raman of the influence of the molar ratio SiO{sub 2}/Al{sub 2}O{sub 3} and reduction temperature on the system CuZSM5; Caracterizacion por SEM, EDS y micro-Raman de la influencia de la relacion molar SiO{sub 2}/Al{sub 2}O{sub 3} y temperatura de reduccion sobre el sistema CuZSM5

    Energy Technology Data Exchange (ETDEWEB)

    Chavez R, F. [Instituto Politecnico Nacional, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, 07738 Mexico D. F. (Mexico); Rodriguez I, I. [Universidad de la Habana, Instituto de Ciencia y Tecnologia de Materiales, Zapata y G. s/n, 10400 La Habana (Cuba); Petranovskii, V., E-mail: fchavez@esfm.ipn.mx [UNAM, Centro de Nanociencias y Nanotecnologia, Apdo. Postal 14, 22800 Ensenada, Baja California (Mexico)

    2014-07-01

    The morphological and spectroscopic changes caused by reduction of ion-exchanged CuZSM5 samples with SiO{sub 2}/Al{sub 2}O{sub 3} molar ratios (MR) of 30 and 70 in H{sub 2} flow at 150 and 350 grades C are discussed. the nominal copper loading was of 1% by weight. Scanning electron microscopy of CuZSM5 sample set showed that the treatment in reducing atmosphere at 350 grades C produces particle agglomeration and smoother surface texture that treatment at 150 grades C, this effect was more pronounced for the sample with MR 30. Furthermore, the particles corresponding to the sample with MR 30 are of irregular shape and have rough texture (cubic or rectangular crystals, protrusions) while the particles of the sample with MR 70 are in the majority of spherical smooth texture (leaf-shaped crystals/platelet, reclining). Energy Dispersive X-ray spectroscopy elemental analysis reveals a heterogeneous distribution of copper as well other elements in each sample. The micro-Raman spectroscopy shows some changes in the vibrational modes for the studied samples. (Author)

  13. Revision of the Li13Si4 structure.

    Science.gov (United States)

    Zeilinger, Michael; Fässler, Thomas F

    2013-11-06

    Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

  14. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    International Nuclear Information System (INIS)

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Process-property relationships of SiC chemical vapor deposition in the Si/H/C/O system

    International Nuclear Information System (INIS)

    Richardson, C.; Takoudis, C.G.

    1999-01-01

    The thermal, chemical, and physical properties of SiC make it an attractive material for a wide range of applications from wear resistant coatings on tools to high temperature microelectronics operations. A comprehensive thermodynamic analysis has been performed for the Si/H/C/O system from which a priori process-property relationships of the chemical vapor deposition (CVD) of silicon carbide (SiC) are obtained. The parameter space for pure silicon carbide growth is reported for five orders of magnitude of the system water vapor level (1 ppb--100 ppm), four orders of magnitude of system pressure (0.1--760 Torr), and two orders of magnitude of C/Si feed ratio (0.25--20) and H 2 /Si feed ratio (50--10,000). Lower growth temperatures for pure SiC are predicted in clean systems with low system water vapor levels, at stoichiometric to near carbon excess conditions (C/Si ≅ 1 to C/Si > 1), at high carrier gas flow rates (large H 2 /Si feed ratios), and at low operating pressures. Because relative C/Si and H 2 /Si feed ratios have been considered, the predictions in this study are applicable to both multiple and single precursor systems. Further, these results are valid for the CVD of α-SiC as well as β-SiC. Experimental data reported on the growth of α-SiC and β-SiC are found to be in satisfactory agreement with the theoretical predictions, for numerous systems that include multiple and single source, silicon and carbon, species

  17. Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

    International Nuclear Information System (INIS)

    Zlateva, G; Atanassov, A; Baleva, M; Nikolova, L; Abrashev, M V

    2007-01-01

    An orientational growth of the Mg 2 Si lattice relative to the Si lattice is considered assuming minimum mismatch of their lattice parameters. The Raman scattering cross-sections are calculated for the four possible orientations of the Mg 2 Si lattice positioned in this way. The integral intensity ratios for the F 2g mode of Mg 2 Si in different polarization configurations, obtained from the experimental spectra, are compared with the calculated ratios. It is found that the Mg 2 Si nanolayer's morphology is sensitive to the implantation energy, which determines both the peak Mg concentration in the initial implantation profile and its position in the sample depth. At a peak concentration of the order of the stoichiometric concentration, the layers are highly oriented. When the peak concentration is higher and the peak is placed closer to the surface, the layers are polycrystalline

  18. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  19. Revision of the Li13Si4 structure

    Directory of Open Access Journals (Sweden)

    Thomas F. Fässler

    2013-12-01

    Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

  20. Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering.

    Science.gov (United States)

    Ke, S Y; Yang, J; Qiu, F; Wang, Z Q; Wang, C; Yang, Y

    2015-11-06

    We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

  1. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  2. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    International Nuclear Information System (INIS)

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  3. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    International Nuclear Information System (INIS)

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  4. Financial Key Ratios

    OpenAIRE

    Tănase Alin-Eliodor

    2014-01-01

    This article focuses on computing techniques starting from trial balance data regarding financial key ratios. There are presented activity, liquidity, solvency and profitability financial key ratios. It is presented a computing methodology in three steps based on a trial balance.

  5. V3Si multifilamentary superconductor with high overall Jc

    International Nuclear Information System (INIS)

    Takeuchi, Takao; Inoue, Kiyoshi; Kosuge, Michio; Iijima, Yasuo; Watanabe, Kazuo

    1994-01-01

    V 3 Si is one of the A15-type superconducting compounds from which single crystals can be quite easily obtained due to the nature of the equilibrium phase diagram. Thus, the fundamental characteristics of A15 compounds (such as electronic structure and cubic-to-tetragonal structural transformation) have been studied with this compound. V 3 Si is, however, also promising in practical use as an alternative to Nb 3 Sn for high field magnets, since the upper critical field H c2 (4.2 K) is more than 20 T. Although the open-quotes bronze process,close quotes the established commercial process to produce Nb 3 Sn conductors, is also available for V 3 Si, the ternary section of the Cu-V-Si phase diagram indicates two diffusion paths are possible: One from the bronze with low Si content (Si 3 Si, and the other from the bronze with higher Si content to V 3 Si via V 5 Si 3 . The high Si bronze is likely to be advantageous in reducing the bronze volume fraction and hence achieving high overall critical current density J c . This is because the initially formed V 5 Si 3 is eventually converted to V 3 Si as long as the total proportion of V to Si in the composite (overall V/Si molar ratio) is kept around 3. However, long times at high temperatures are necessary for appreciable V 3 Si layer growth, thereby yielding grain growth of V 3 Si and lowering the J c of the V 3 Si compound and the overall J c accordingly. In the present study, in order to improve the overall J c , the authors have realized ∼1μm filament diameter by preparing a double-stacked Cu-8.5at.%Si/V composite. The primary bundle is sheathed with a Ta tube. The Si in the bronze inside the Ta is available only for the diffusion reaction, and the overall V/Si ratios is ∼3

  6. Mass and QEC value of 26Si

    International Nuclear Information System (INIS)

    Eronen, T.; Elomaa, V.-V.; Hager, U.; Hakala, J.; Jokinen, A.; Kankainen, A.; Kessler, T.; Moore, I. D.; Rahaman, S.; Rissanen, J.; Weber, C.; Aeystoe, J.

    2009-01-01

    The Q EC value of the superallowed β emitter 26 Si has been measured with the JYFLTRAP Penning trap facility to be 4840.85(10) keV which is ten times more precise than any previous measurement. This leaves only the branching ratio to be improved before the Ft value of 26 Si can be used to test the conserved vector current hypothesis. As a consequence, the 25 Al(p,γ) 26 Si reaction Q-value (Q pγ ) was improved to be 5513.7(5) keV, limited now by the mass excess of 25 Al. The new Q pγ value changes the stellar production rate of 26 Si in nova ignition temperatures by about 10%

  7. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  8. Surveillance of siRNA integrity by FRET imaging

    Science.gov (United States)

    Järve, Anne; Müller, Julius; Kim, Il-Han; Rohr, Karl; MacLean, Caroline; Fricker, Gert; Massing, Ulrich; Eberle, Florian; Dalpke, Alexander; Fischer, Roger; Trendelenburg, Michael F.; Helm, Mark

    2007-01-01

    Techniques for investigation of exogenous small interfering RNA (siRNA) after penetration of the cell are of substantial interest to the development of efficient transfection methods as well as to potential medical formulations of siRNA. A FRET-based visualization method including the commonplace dye labels fluorescein and tetramethylrhodamin (TMR) on opposing strands of siRNA was found compatible with RNA interference (RNAi). Investigation of spectral properties of three labelled siRNAs with differential FRET efficiencies in the cuvette, including pH dependence and FRET efficiency in lipophilic environments, identified the ratio of red and green fluorescence (R/G-ratio) as a sensitive parameter, which reliably identifies samples containing >90% un-degraded siRNA. Spectral imaging of siRNAs microinjected into cells showed emission spectra indistinguishable from those measured in the cuvette. These were used to establish a calibration curve for assessing the degradation state of siRNA in volume elements inside cells. An algorithm, applied to fluorescence images recorded in standard green and red fluorescence channels, produces R/G-ratio images of high spatial resolution, identifying volume elements in the cell with high populations of intact siRNA with high fidelity. To demonstrate the usefulness of this technique, the movement of intact siRNA molecules are observed after introduction into the cytosol by microinjection, standard transfection and lipofection with liposomes. PMID:17890733

  9. Energetic prediction on the stability of A2Mg12Si7, A2Mg4Si3, and AMgSi in the A2Si–Mg2Si system (A = Ca, Sr and Ba) and their calculated electronic structures

    International Nuclear Information System (INIS)

    Imai, Yoji; Mori, Yoshihisa; Nakamura, Shigeyuki; Takarabe, Ken-ichi

    2014-01-01

    Highlights: • Formation energies of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca,Sr,Ba) were calculated. • All AMgSi are quite stable compared to mixture of A 2 Si and Mg 2 Si. • Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are predicted to be stable, but Ca 2 Mg 4 Si 3 is not. • Ca 2 Mg 12 Si 7 and Sr 2 Mg 12 Si 7 are energetically unstable. • Stability of Ba 2 Mg 12 Si 7 is a tender subject. -- Abstract: In order to evaluate the relative stability of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca, Sr, and Ba) in the A 2 Si–Mg 2 Si system, electronic energy changes in the formation of these compounds were calculated using a density-functional theory with the Perdew–Wang generalized gradient approximations. It was found that (1) AMgSi’s are quite stable compared to equi-molar mixture of A 2 Si and Mg 2 Si, (2) Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are also stable, (3) Ca 2 Mg 4 Si 3 and Ca 2 Mg 12 Si 7 are less stable than the mixture of CaMgSi and Mg 2 Si, and (4) Stability of Ba 2 Mg 12 Si 7 is a tender subject and Sr 2 Mg 12 Si 7 is energetically unstable compared to the mixture of Sr 2 Mg 4 Si 3 (or, SrMgSi) and Mg 2 Si. The presence of Sr 2 Mg 12 Si 7 may be due to the vibrational and/or configurational entropy, which are not treated in the present study. From the calculated electronic densities of state, complex compounds of SrMgSi and Mg 2 Si have both p-type and n-type character, depending on the ratio of SrMgSi and Mg 2 Si in that compound

  10. Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Giangregorio, Maria M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)]. E-mail: michelaria.giangregorio@ba.imip.cnr.it; Losurdo, Maria [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Sacchetti, Alberto [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Capezzuto, Pio [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy); Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM sez. Bari, Via Orabona 4, 70125 Bari (Italy)

    2006-12-15

    Au nanoclusters have been deposited on Si(0 0 1) surfaces by sputtering of a metallic Au target using an Ar plasma. Different wet and dry treatments of the Si(0 0 1) surface, including dipping in HF solution and exposure to H{sub 2} and N{sub 2} plasmas, have been applied and the effects of these treatments on the Au nanoparticles/Si interface, the Au nanoclusters aspect ratio and the surface plasmon resonance (SPR) energy and amplitude are investigated exploiting spectroscopic ellipsometry and atomic force microscopy. It is found that the Au nanoclusters aspect ratio depends on the extent of the Au-Si intermixing. The thicker the Au-Si interface layer, the larger the Au nanoparticles aspect ratio and the red-shift of the SPR peak. Furthermore, SiO{sub 2} and the H{sub 2} plasma treatment inhibit the Si-Au intermixing, while HF-dipping and the N{sub 2} plasma treatment favour Au-Si intermixing, yielding silicide formation which increases the Si wetting by Au.

  11. Mass Spectrometric Investigation of Silicon Extremely Enriched in (28)Si: From (28)SiF4 (Gas Phase IRMS) to (28)Si Crystals (MC-ICP-MS).

    Science.gov (United States)

    Pramann, Axel; Rienitz, Olaf

    2016-06-07

    A new generation of silicon crystals even further enriched in (28)Si (x((28)Si) > 0.999 98 mol/mol), recently produced by companies and institutes in Russia within the framework of a project initiated by PTB, were investigated with respect to their isotopic composition and molar mass M(Si). A modified isotope dilution mass spectrometric (IDMS) method treating the silicon as the matrix containing a so-called virtual element (VE) existing of the isotopes (29)Si and (30)Si solely and high resolution multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) were applied in combination. This method succeeds also when examining the new materials holding merely trace amounts of (29)Si (x((29)Si) ≈ 5 × 10(-6) mol/mol) and (30)Si (x((30)Si) ≈ 7 × 10(-7) mol/mol) extremely difficult to detect with lowest uncertainty. However, there is a need for validating the enrichment in (28)Si already in the precursor material of the final crystals, silicon tetrafluoride (SiF4) gas prior to crystal production. For that purpose, the isotopic composition of selected SiF4 samples was determined using a multicollector magnetic sector field gas-phase isotope ratio mass spectrometer. Contaminations of SiF4 by natural silicon due to storing and during the isotope ratio mass spectrometry (IRMS) measurements were observed and quantified. The respective MC-ICP-MS measurements of the corresponding crystal samples show-in contrast-several advantages compared to gas phase IRMS. M(Si) of the new crystals were determined to some extent with uncertainties urel(M) < 1 × 10(-9). This study presents a clear dependence of the uncertainty urel(M(Si)) on the degree of enrichment in (28)Si. This leads to a reduction of urel(M(Si)) during the past decade by almost 3 orders of magnitude and thus further reduces the uncertainty of the Avogadro constant NA which is one of the preconditions for the redefinition of the SI unit kilogram.

  12. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    International Nuclear Information System (INIS)

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  13. Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

    International Nuclear Information System (INIS)

    Lee, J.K.; Lee, S.P.; Byun, J.H.

    2010-01-01

    The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

  14. Influence of duty ratio of pulsed bias on structure and properties of silicon-doped diamond-like carbon films by plasma deposition

    International Nuclear Information System (INIS)

    Nakazawa, Hideki; Kamata, Ryosuke; Miura, Soushi; Okuno, Saori

    2013-01-01

    We have investigated the influence of the duty ratio of pulsed substrate bias on the structure and properties of Si-doped diamond-like carbon (Si-DLC) films deposited by radio frequency plasma-enhanced chemical vapor deposition using CH 4 , Ar, and monomethylsilane (CH 3 SiH 3 ) as the Si source. The Si/(Si + C) ratios in the Si-DLC films deposited using pulsed bias were higher than that of the dc-biased Si-DLC film, and the Si fraction increased with decreasing pulse duty ratio. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy analyses revealed that Si-C, Si-H n , and C-H n bonds in the Si-DLC films increased with decreasing duty ratio. The internal stress decreased as the duty ratio decreased, which is probably due to the increase in Si-C, Si-H n , and C-H n bonds in the films. The Si-DLC films deposited using pulsed bias had higher adhesion strength than the dc-biased Si-DLC film because of the further reduction of internal stress. At higher duty ratios, although the Si fractions of the pulse-biased Si-DLC films were higher than that of the dc-biased Si-DLC film, the wear rates of the former were less than that of the latter. - Highlights: • The internal stress of Si-doped films was lowered at lower duty ratios. • The adhesion of pulse-biased films was improved compared with that of dc films. • The tribological properties of Si-doped films were improved by the use of pulse bias

  15. VVER-1000 dominance ratio

    International Nuclear Information System (INIS)

    Gorodkov, S.

    2009-01-01

    Dominance ratio, or more precisely, its closeness to unity, is important characteristic of large reactor. It allows evaluate beforehand the number of source iterations required in deterministic calculations of power spatial distribution. Or the minimal number of histories to be modeled for achievement of statistical error level desired in large core Monte Carlo calculations. In this work relatively simple approach for dominance ratio evaluation is proposed. It essentially uses core symmetry. Dependence of dominance ratio on neutron flux spatial distribution is demonstrated. (author)

  16. WWER-1000 dominance ratio

    International Nuclear Information System (INIS)

    Gorodkov, S.S.

    2009-01-01

    Dominance ratio, or more precisely, its closeness to unity, is important characteristic of large reactor. It allows evaluate beforehand the number of source iterations required in deterministic calculations of power spatial distribution. Or the minimal number of histories to be modeled for achievement of statistical error level desired in large core Monte Carlo calculations. In this work relatively simple approach for dominance ratio evaluation is proposed. It essentially uses core symmetry. Dependence of dominance ratio on neutron flux spatial distribution is demonstrated. (Authors)

  17. Sharpening Sharpe Ratios

    OpenAIRE

    William N. Goetzmann; Jonathan E. Ingersoll Jr.; Matthew I. Spiegel; Ivo Welch

    2002-01-01

    It is now well known that the Sharpe ratio and other related reward-to-risk measures may be manipulated with option-like strategies. In this paper we derive the general conditions for achieving the maximum expected Sharpe ratio. We derive static rules for achieving the maximum Sharpe ratio with two or more options, as well as a continuum of derivative contracts. The optimal strategy has a truncated right tail and a fat left tail. We also derive dynamic rules for increasing the Sharpe ratio. O...

  18. Effect of calcium/silicon ratio on retention of uranium (VI) in portland cement materials

    International Nuclear Information System (INIS)

    Tan Hongbin; Li Yuxiang

    2005-01-01

    Calcium silicate hydrate (CSH) materials of varied calcium to silicon (Ca/Si) ratios were prepared by hydrothermal synthesis at 80 degree C, with calcium oxide and micro-silicon employed. These products were determined to be of gel phase by XRD. Leaching tests with 1% hydrochloric acid indicated that more Uranium (VI) was detained by CSH with lower Ca/Si ratios. Alkali-activated slag cement (with a lower Ca/Si ratio) was found to have a stronger retention capacity than Portland cement (with a higher Ca/Si ratio), at 25 degree C in 102-days leaching tests with simulated solidified forms containing Uranium (VI). The accumulative leaching fraction of Uranium (VI) for Alkali-activated slag cement solidified forms is 17.6% lower than that for Portland cement. The corresponding difference of diffusion coefficients is 40.6%. This could be correlated with the difference of Ca/Si ratios between cements of two kinds. (authors)

  19. Weak-field precession of nano-pillar spin-torque oscillators using MgO-based perpendicular magnetic tunnel junction

    Science.gov (United States)

    Zhang, Changxin; Fang, Bin; Wang, Bochong; Zeng, Zhongming

    2018-04-01

    This paper presents a steady auto-oscillation in a spin-torque oscillator using MgO-based magnetic tunnel junction (MTJ) with a perpendicular polarizer and a perpendicular free layer. As the injected d.c. current varied from 1.5 to 3.0 mA under a weak magnetic field of 290 Oe, the oscillation frequency decreased from 1.85 to 1.3 GHz, and the integrated power increased from 0.1 to 74 pW. A narrow linewidth down to 7 MHz corresponding to a high Q factor of 220 was achieved at 2.7 mA, which was ascribed to the spatial coherent procession of the free layer magnetization. Moreover, the oscillation frequency was quite sensitive to the applied field, about 3.07 MHz/Oe, indicating the potential applications as a weak magnetic field detector. These results suggested that the MgO-based MTJ with perpendicular magnetic easy axis could be helpful for developing spin-torque oscillators with narrow-linewidth and high sensitive.

  20. Synthesis of SiO(x) powder using DC arc plasma.

    Science.gov (United States)

    Jung, Chan-Ok; Park, Dong-Wha

    2013-02-01

    SiO(x) was prepared by DC arc plasma and applied to the anode material of lithium ion batteries. A pellet of a mixture of Si and SiO2 was used as the raw material. The ratios of the silicon and silicon dioxide (SiO2) mixtures were varied by controlling the Si-SiO2 molar ratio (Si-SiO2 = 1-4). Hydrogen gas was used as the reduction atmosphere in the chamber. The prepared SiO(x) was collected on the chamber wall. The obtained SiO(x) was characterized by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). XRD and TEM showed that the phase composition of the prepared particles was composed of amorphous SiO(x) and crystalline Si. The prepared SiO(x) showed wire and spherical morphology. XPS indicated the bonding state and 'x' value of the prepared SiO(x), which was close to one. The result of prepared SiO(x) is discussed from thermodynamic equilibrium calculations. The electrochemical behavior of the silicon monoxide anode was investigated.

  1. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

    Science.gov (United States)

    Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

    2018-05-01

    The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.

  2. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

    Science.gov (United States)

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-07-03

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

  3. Detecting isotopic ratio outliers

    International Nuclear Information System (INIS)

    Bayne, C.K.; Smith, D.H.

    1985-01-01

    An alternative method is proposed for improving isotopic ratio estimates. This method mathematically models pulse-count data and uses iterative reweighted Poisson regression to estimate model parameters to calculate the isotopic ratios. This computer-oriented approach provides theoretically better methods than conventional techniques to establish error limits and to identify outliers. 6 refs., 3 figs., 3 tabs

  4. Detecting isotopic ratio outliers

    Science.gov (United States)

    Bayne, C. K.; Smith, D. H.

    An alternative method is proposed for improving isotopic ratio estimates. This method mathematically models pulse-count data and uses iterative reweighted Poisson regression to estimate model parameters to calculate the isotopic ratios. This computer-oriented approach provides theoretically better methods than conventional techniques to establish error limits and to identify outliers.

  5. Detecting isotopic ratio outliers

    International Nuclear Information System (INIS)

    Bayne, C.K.; Smith, D.H.

    1986-01-01

    An alternative method is proposed for improving isotopic ratio estimates. This method mathematically models pulse-count data and uses iterative reweighted Poisson regression to estimate model parameters to calculate the isotopic ratios. This computer-oriented approach provides theoretically better methods than conventional techniques to establish error limits and to identify outliers

  6. Microstructural and mechanical properties of binary Ni–Si eutectic alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gogebakan, Musa, E-mail: gogebakan@ksu.edu.tr [Department of Physics, Faculty of Art and Sciences, Kahramanmaras Sutcu Imam University, Kahramanmaras 46100 (Turkey); Kursun, Celal [Department of Physics, Faculty of Art and Sciences, Kahramanmaras Sutcu Imam University, Kahramanmaras 46100 (Turkey); Gunduz, Kerem Ozgur; Tarakci, Mehmet; Gencer, Yucel [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze, 41400 Kocaeli (Turkey)

    2015-09-15

    Highlights: • Ni{sub 80}Si{sub 20}, Ni{sub 70}Si{sub 30}, Ni{sub 55}Si{sub 45} and Ni{sub 45}Si{sub 55} were prepared by arc melting method. • The maximum microhardness value of 1126 HV obtained for Ni{sub 70}Si{sub 30} alloy. • The microhardness values decreases with increase of Si/Ni ratio. • Ni{sub 80}Si{sub 20} and Ni{sub 55}Si{sub 45} are soft ferromagnetic, Ni{sub 70}Si{sub 30} and Ni{sub 45}Si{sub 55} are paramagnetic. - Abstract: In the present work, Ni–Si eutectic alloys with nominal compositions of Ni{sub 80}Si{sub 20}, Ni{sub 70}Si{sub 30}, Ni{sub 55}Si{sub 45} and Ni{sub 45}Si{sub 55} (Ni and Si with the purity of 99.99%) were prepared by arc melting method under vacuum/argon atmosphere. The effects of Si/Ni ratio on the microstructural properties, thermal transformation behavior, micro-hardness and magnetic properties of the Ni–Si eutectic alloys were investigated. These alloys were characterized by X-ray diffraction (XRD), optical microscopy (OM), scanning electron microscopy (SEM), differential thermal analysis (DTA), Vickers microhardness measurement and Vibrating Sample Magnetometer (VSM). The phases expected according to Ni–Si phase diagram for conventional solidified eutectic Ni–Si alloys are considerably consistent with phase detected by XRD in this study. The quantitative results confirm that the chemical composition of the alloys very close to eutectic compositions and the microstructures are in typical lamellar eutectic morphology. The maximum microhardness value of 1126 HV obtained for Ni{sub 70}Si{sub 30} alloy which has highest melting temperature amongst Ni–Si eutectics. The microhardness values decreases with increase of Si/Ni ratio. Ni{sub 80}Si{sub 20} and Ni{sub 55}Si{sub 45} alloys are soft ferromagnetic, Ni{sub 70}Si{sub 30} and Ni{sub 45}Si{sub 55} alloys are paramagnetic with no magnetic saturation.

  7. SI units in radiology

    Energy Technology Data Exchange (ETDEWEB)

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  8. Difference and ratio plots

    DEFF Research Database (Denmark)

    Svendsen, Anders Jørgen; Holmskov, U; Bro, Peter

    1995-01-01

    and systemic lupus erythematosus from another previously published study (Macanovic, M. and Lachmann, P.J. (1979) Clin. Exp. Immunol. 38, 274) are also represented using ratio plots. Our observations indicate that analysis by regression analysis may often be misleading....... hitherto unnoted differences between controls and patients with either rheumatoid arthritis or systemic lupus erythematosus. For this we use simple, but unconventional, graphic representations of the data, based on difference plots and ratio plots. Differences between patients with Burkitt's lymphoma...

  9. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Stanford, N. [Centre for Material and Fibre Innovation, Deakin University, Geelong, Victoria 3217 (Australia); Dunne, D.P., E-mail: druce_dunne@uow.edu.au [Faculty of Engineering, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2010-12-15

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  10. Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp

    Science.gov (United States)

    2018-01-01

    By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiCp/Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time. PMID:29682145

  11. Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp.

    Science.gov (United States)

    Wang, Bin; Qu, Shengguan; Li, Xiaoqiang

    2018-01-01

    By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0%) were achieved for optical application. The flexural strength of the prepared SiC p /Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson's ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

  12. Preparation and Anodizing of SiCp/Al Composites with Relatively High Fraction of SiCp

    Directory of Open Access Journals (Sweden)

    Bin Wang

    2018-01-01

    Full Text Available By properly proportioned SiC particles with different sizes and using squeeze infiltration process, SiCp/Al composites with high volume fraction of SiC content (Vp = 60.0%, 61.2%, 63.5%, 67.4%, and 68.0% were achieved for optical application. The flexural strength of the prepared SiCp/Al composites was higher than 483 MPa and the elastic modulus was increased from 174.2 to 206.2 GPa. With an increase in SiC volume fraction, the flexural strength and Poisson’s ratio decreased with the increase in elastic modulus. After the anodic oxidation treatment, an oxidation film with porous structure was prepared on the surface of the composite and the oxidation film was uniformly distributed. The anodic oxide growth rate of composite decreased with SiC content increased and linearly increased with anodizing time.

  13. Effect of Si on the reversibility of stress-induced martensite in Fe-Mn-Si shape memory alloys

    International Nuclear Information System (INIS)

    Stanford, N.; Dunne, D.P.

    2010-01-01

    Fe-Mn-Si is a well-characterized ternary shape memory alloy. Research on this alloy has consistently shown that the addition of 5-6 wt.% Si is desirable to enhance the reversibility of stress-induced martensite vis-a-vis shape memory. This paper examines the effect of Si on the morphology and the crystallography of the martensite in the Fe-Mn-Si system. It is concluded that the addition of Si increases the c/a ratio of the martensite, reduces the transformation volume change and decreases the atomic spacing difference between the parallel close-packed directions in the austenite-martensite interface (habit) plane. It is proposed that, in addition to austenite strengthening, Si enhances reversibility by reducing the volume change and the interfacial atomic mismatch between the martensite and the austenite. Although shape memory is improved, transformation reversibility remains limited by the necessary misfit dislocations that accommodate the atomic spacing differences in the interface.

  14. Preparation of Si3N4 Form Diatomite via a Carbothermal Reduction-Nitridation Process

    Science.gov (United States)

    Ma, Bin; Huang, Zhaohui; Mei, Lefu; Fang, Minghao; Liu, Yangai; Wu, Xiaowen; Hu, Xiaozhi

    2016-05-01

    Si3N4 was produced using diatomite and sucrose as silicon and carbon sources, respectively. The effect of the C/SiO2 molar ratio, heating temperature and soaking time on the morphology and phase compositions of the final products was investigated by scanning electron microscopy, x-ray diffraction analysis and energy dispersive spectroscopy. The phase equilibrium relationships of the system at different heating temperatures were also investigated based on the thermodynamic analysis. The results indicate that the phase compositions depended on the C/SiO2 molar ratio, heating temperature and soaking time. Fabrication of Si3N4 from the precursor via carbothermal reduction nitridation was achieved at 1550°C for 1-8 h using a C/SiO2 molar ratio of 3.0. The as-prepared Si3N4 contained a low amount of Fe3Si (<1 wt.%).

  15. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  16. Positron annihilation studies of the AlOx/SiO2/Si interface in solar cell structures

    International Nuclear Information System (INIS)

    Edwardson, C. J.; Coleman, P. G.; Li, T.-T. A.; Cuevas, A.; Ruffell, S.

    2012-01-01

    Film and film/substrate interface characteristics of 30 and 60 nm-thick AlO x films grown on Si substrates by thermal atomic layer deposition (ALD), and 30 nm-thick AlO x films by sputtering, have been probed using variable-energy positron annihilation spectroscopy (VEPAS) and Doppler-broadened spectra ratio curves. All samples were found to have an interface which traps positrons, with annealing increasing this trapping response, regardless of growth method. Thermal ALD creates an AlO x /SiO x /Si interface with positron trapping and annihilation occurring in the Si side of the SiO x /Si boundary. An induced positive charge in the Si next to the interface reduces diffusion into the oxides and increases annihilation in the Si. In this region there is a divacancy-type response (20 ± 2%) before annealing which is increased to 47 ± 2% after annealing. Sputtering seems to not produce samples with this same electrostatic shielding; instead, positron trapping occurs directly in the SiO x interface in the as-deposited sample, and the positron response to it increases after annealing as an SiO 2 layer is formed. Annealing the film has the effect of lowering the film oxygen response in all film types. Compared to other structural characterization techniques, VEPAS shows larger sensitivity to differences in film preparation method and between as-deposited and annealed samples.

  17. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    International Nuclear Information System (INIS)

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  18. Structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 phases from first-principles calculations

    Science.gov (United States)

    Li, X. D.; Li, K.; Wei, C. H.; Han, W. D.; Zhou, N. G.

    2018-06-01

    The structural, electronic, elastic, and thermodynamic properties of CaSi, Ca2Si, and CaSi2 are systematically investigated by using first-principles calculations method based on density functional theory (DFT). The calculated formation enthalpies and cohesive energies show that CaSi2 possesses the greatest structural stability and CaSi has the strongest alloying ability. The structural stability of the three phases is compared according to electronic structures. Further analysis on electronic structures indicates that the bonding of these phases exhibits the combinations of metallic, covalent, and ionic bonds. The elastic constants are calculated, and the bulk modulus, shear modulus, Young's modulus, Poisson's ratio, and anisotropy factor of polycrystalline materials are deduced. Additionally, the thermodynamic properties were theoretically predicted and discussed.

  19. The Au/Si eutectic bonding compatibility with KOH etching for 3D devices fabrication

    Science.gov (United States)

    Liang, Hengmao; Liu, Mifeng; Liu, Song; Xu, Dehui; Xiong, Bin

    2018-01-01

    KOH etching and Au/Si eutectic bonding are cost-efficient technologies for 3D device fabrication. Aimed at investigating the process compatibility of KOH etching and Au/Si bonding, KOH etching tests have been carried out for Au/bulk Si and Au/amorphous Si (a-Si) bonding wafers in this paper. For the Au/bulk Si bonding wafer, a serious underetch phenomenon occurring on the damage layer in KOH etching definitely results in packaging failure. In the microstructure analysis, it is found that the formation of the damage layer between the bonded layer and bulk Si is attributed to the destruction of crystal Si lattices in Au/bulk Si eutectic reaction. Considering the occurrence of underetch for Au/Si bonding must meet two requirements: the superfluous Si and the defective layer near the bonded layer, the Au/a-Si bonding by regulating the a-Si/Au thickness ratio is presented in this study. Only when the a-Si/Au thickness ratio is relatively low are there not underetch phenomena, of which the reason is the full reaction of the a-Si layer avoiding the formation of the damage layer for easy underetch. Obviously, the Au/a-Si bonding via choosing a moderate a-Si/Au thickness ratio (⩽1.5:1 is suggested) could be reliably compatible with KOH etching, which provides an available and low-cost approach for 3D device fabrication. More importantly, the theory of the damage layer proposed in this study can be naturally applied to relevant analyses on the eutectic reaction of other metals and single crystal materials.

  20. Quantitative SIMS analysis of SiGe composition with low energy O2+ beams

    International Nuclear Information System (INIS)

    Jiang, Z.X.; Kim, K.; Lerma, J.; Corbett, A.; Sieloff, D.; Kottke, M.; Gregory, R.; Schauer, S.

    2006-01-01

    This work explored quantitative analyses of SiGe films on either Si bulk or SOI wafers with low energy SIMS by assuming a constant ratio between the secondary ion yields of Si + and Ge + inside SiGe films. SiGe samples with Ge contents ranging from 15 to 65% have been analyzed with a 1 keV O 2 + beam at normal incidence. For comparison, the samples were also analyzed with RBS and/or AES. The Ge content as measured with SIMS, based on a single SiGe/Si or SiGe/SOI standard, exhibited good agreement with the corresponding RBS and AES data. It was concluded that SIMS was capable of providing accurate characterization of the SiGe composition with the Ge content up to 65%

  1. New manufacturing method for Fe-Si magnetic powders using modified pack-cementation process

    Science.gov (United States)

    Byun, Ji Young; Kim, Jang Won; Han, Jeong Whan; Jang, Pyungwoo

    2013-03-01

    This paper describes a new method for making Fe-Si magnetic powders using a pack-cementation process. It was found that Fe-Si alloy powders were formed by a reaction of the pack mixture of Fe, Si, NaF, and Al2O3 powders at 900 °C for 24 h under a hydrogen atmosphere. Separation of the Fe-Si alloy powders was dependent on the particle size of the Fe powders in the pack. For small Fe powders, magnetic separation in a medium of strong alkali solution was recommended. But, for relatively larger Fe powders, the Fe-Si alloy powders were easily separated from Al2O3 powders using a magnet in air atmosphere. The Si content in the Fe-Si magnetic powders were easily controlled by changing the weight ratio of Si to (Si+Fe) in the pack.

  2. Electro-physical properties of a Si-based MIS structure with a low-k SiOC(-H) film

    Energy Technology Data Exchange (ETDEWEB)

    Zakirov, Anvar Sagatovich; Navamathavan, Rangaswamy; Kim, Seung Hyun; Jang, Yong Jun; Jung, An Soo; Choi, Chi Kyu [Cheju National University, Jeju (Korea, Republic of)

    2006-09-15

    SiOC(-H) films with low dielectric constants have been prepared by using plasma enhanced chemical vapor deposition with a mixture of methyltriethoxysilane and oxygen precursors. The C-V characteristics of the structures, Al/SiOC(-H)/p-Si(100), were studied in the forward and the reverse directions by applying a polarizing potential. We found that the ratio of the maximum to the minimum capacitance (C{sub ma}x{sub /}C{sub min}) depended on the [MTES/(MTES+O{sub 2})] flow rate ratio. Annealed samples exhibited even greater reductions of the maximum capacitance and the dielectric constant of the SiOC(-H) samples. After annealing at 400 .deg. C, the measurement in the reverse direction revealed an interesting behavior in the form of strongly pronounced 'steps'. The bonds between Si-O and the -CH{sub 3} group reduced the surface charge density, and the distribution of the surface charge density depended on [MTES/(MTES+O{sub 2})] flow rate ratio and the annealing temperature because the fixed positive (Si-CH{sub 3}){sup +} and negative (Si-O){sup -} changed the configuration at the SiOC(-H)/p-Si(100) interface. The SiOC(-H) film had donor (O{sub 2}) and acceptor (Si-CH{sub 3} -groups) levels, and the electronic process at the SiOC(-H)/p-Si(100) interface was defined by the (Si-CH{sub 3}){sup +} and the (Si-O){sup -} bonds.

  3. The corrosion behavior of CVI SiC matrix in SiC{sub f}/SiC composites under molten fluoride salt environment

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hongda [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); School of Graduate, University of Chinese Academy of Sciences, Beijing 100049 (China); Feng, Qian [Analysis and Testing Center, Donghua University, Shanghai 201600 (China); Wang, Zhen, E-mail: jeff@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Zhou, Haijun; Kan, Yanmei; Hu, Jianbao [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Dong, Shaoming, E-mail: smdong@mail.sic.ac.cn [Structural Ceramics and Composites Engineering Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2017-04-15

    High temperature corrosion behavior and microstructural evolution of designed chemical-vapor-infiltrated SiC matrix in SiC fiber reinforced SiC ceramic matrix composites in 46.5LiF-11.5NaF-42.0KF (mol. %) eutectic salt at 800 °C for various corrosion time was studied. Worse damage was observed as extending the exposure time, with the mass loss ratio increasing from 0.716 wt. % for 50 h to 5.914 wt. % for 500 h. The mass loss rate showed a trend of first decrease and then increase with the extended corrosion exposure. Compared with the near-stoichiometric SiC matrix layers, the O-contained boundaries between deposited matrix layers and the designed Si-rich SiC matrix layers were much less corrosion resistant and preferentially corroded. Liner relationship between the mass loss ratio and the corrosion time obtained from 50 h to 300 h indicated that the corrosion action was reaction-control process. Further corrosion would lead to matrix layer exfoliation and higher mass loss ratio.

  4. The rectilinear Steiner ratio

    Directory of Open Access Journals (Sweden)

    PO de Wet

    2005-06-01

    Full Text Available The rectilinear Steiner ratio was shown to be 3/2 by Hwang [Hwang FK, 1976, On Steiner minimal trees with rectilinear distance, SIAM Journal on Applied Mathematics, 30, pp. 104– 114.]. We use continuity and introduce restricted point sets to obtain an alternative, short and self-contained proof of this result.

  5. Interfacial characterization of CVI-SiC/SiC composites

    International Nuclear Information System (INIS)

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  6. Tunneling magnetoresistance in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Wei, H. X.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Jian [Department of Physics and the Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong (China)

    2014-04-28

    We present a theoretical study of the tunneling magnetoresistance (TMR) and spin-polarized transport in Fe{sub 3}Si/MgO/Fe{sub 3}Si(001) magnetic tunnel junction (MTJ). It is found that the spin-polarized conductance and bias-dependent TMR ratios are rather sensitive to the structure of Fe{sub 3}Si electrode. From the symmetry analysis of the band structures, we found that there is no spin-polarized Δ{sub 1} symmetry bands crossing the Fermi level for the cubic Fe{sub 3}Si. In contrast, the tetragonal Fe{sub 3}Si driven by in-plane strain reveals half-metal nature in terms of Δ{sub 1} state. The giant TMR ratios are predicted for both MTJs with cubic and tetragonal Fe{sub 3}Si electrodes under zero bias. However, the giant TMR ratio resulting from interface resonant transmission for the former decreases rapidly with the bias. For the latter, the giant TMR ratio can maintain up to larger bias due to coherent transmission through the majority-spin Δ{sub 1} channel.

  7. Sub-barrier fusion of Si+Si systems

    Science.gov (United States)

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  8. Sub-barrier fusion of Si+Si systems

    Directory of Open Access Journals (Sweden)

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  9. Transformer ratio enhancement experiment

    International Nuclear Information System (INIS)

    Gai, W.; Power, J. G.; Kanareykin, A.; Neasheva, E.; Altmark, A.

    2004-01-01

    Recently, a multibunch scheme for efficient acceleration based on dielectric wakefield accelerator technology was outlined in J.G. Power, W. Gai, A. Kanareykin, X. Sun. PAC 2001 Proceedings, pp. 114-116, 2002. In this paper we present an experimental program for the design, development and demonstration of an Enhanced Transformer Ratio Dielectric Wakefield Accelerator (ETR-DWA). The principal goal is to increase the transformer ratio R, the parameter that characterizes the energy transfer efficiency from the accelerating structure to the accelerated electron beam. We present here an experimental design of a 13.625 GHz dielectric loaded accelerating structure, a laser multisplitter producing a ramped bunch train, and simulations of the bunch train parameters required. Experimental results of the accelerating structure bench testing and ramped pulsed train generation with the laser multisplitter are shown as well. Using beam dynamic simulations, we also obtain the focusing FODO lattice parameters

  10. Intake to Production Ratio

    DEFF Research Database (Denmark)

    Nazaroff, William; Weschler, Charles J.; Little, John C.

    2012-01-01

    BACKGROUND: Limited data are available to assess human exposure to thousands of chemicals currently in commerce. Information that relates human intake of a chemical to its production and use can help inform understanding of mechanisms and pathways that control exposure and support efforts...... to protect public health.OBJECTIVES: We introduce the intake-to-production ratio (IPR) as an economy-wide quantitative indicator of the extent to which chemical production results in human exposure.METHODS: The IPR was evaluated as the ratio of two terms: aggregate rate of chemical uptake in a human......(n-butyl) phthalate, 1,040 ppm for para-dichlorobenzene, 6,800 ppm for di(isobutyl) phthalate, 7,700 ppm for diethyl phthalate, and 8,000-24,000 ppm (range) for triclosan.CONCLUSION: The IPR is well suited as an aggregate metric of exposure intensity for characterizing population-level exposure to synthesized...

  11. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    International Nuclear Information System (INIS)

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  12. Fabrication of SiCp/Al Alloy Composites by In-situ Vacuum Hot Press Process

    Energy Technology Data Exchange (ETDEWEB)

    Choi, S. W.; Hong, S. K.; Kim, Y. M.; Kang, C. S. [Chonnam National University, Kwangju (Korea); Chang, S. Y. [Hanyang University, Seoul (Korea)

    2001-07-01

    SiCp/pure Al and SiCp/2024Al MMCs were fabricated by in-situ VHP process designed specially just in this study which is composed of the vacuum hot press at range from R.T. to 500 deg.C and the continuous extrusion without canning process at 520 deg.C. It was investigated the effect of SiC particle size, volume fraction and extrusion ratio on the tensile properties and micro structure in all composites. In case of the 10:1 extrusion ratio, but SiCp/pure Al and SiCp/2024Al composites were shown a sound appearance and a good micro structure without crack of SiCp as well as uniform distribution of SiCp. However, in case of the 16:1 extrusion ratio, the number of cracked SiC particles more than increased in a higher volume fraction composite and 2024Al matrix composite compared with pure Al matrix one. The tensile strength of the composites reinforced smaller SiCp was higher than that of the bigger SiCp reinforced in same volume fraction and extrusion ratio. (author) 14 refs., 14 figs.

  13. Preliminary reduction of chromium ore using Si sludge generated in silicon wafer manufacturing process

    Directory of Open Access Journals (Sweden)

    Jung W.-G.

    2018-01-01

    Full Text Available In order to promote the recycling of by-product from Si wafer manufacturing process and to develop environment-friend and low cost process for ferrochrome alloy production, a basic study was performed on the preliminary reduction reaction between chromium ore and the Si sludge, comprised of SiC and Si particles, which is recovered from the Si wafer manufacturing process for the semiconductor and solar cell industries. Pellets were first made by mixing chromium ore, Si sludge, and some binders in the designed mixing ratios and were then treated at different temperatures in the 1116°C–1388°C range in an ambient atmosphere. Cordierite and SiO2 were confirmed to be formed in the products after the reduction. Additionally, metal particles were observed in the product with Fe, Cr, and Si components. It is found that temperatures above 1300°C are necessary for the reduction of the chromium ore by the Si sludge. The reduction ratio for Fe was evaluated quantitatively for our experimental conditions, and the proper mixing ratio was suggested for the pre-reduction of the chromium ore by the Si sludge. This study provides basic information for the production of ferrochrome alloys on the pre-reduction of chromium ore using Si sludge.

  14. Residual stress in thick low-pressure chemical-vapor deposited polycrystalline SiC coatings on Si substrates

    Science.gov (United States)

    Choi, D.; Shinavski, R. J.; Steffier, W. S.; Spearing, S. M.

    2005-04-01

    Residual stress in thick coatings of polycrystalline chemical-vapor deposited SiC on Si substrates is a key variable that must be controlled if SiC is to be used in microelectromechanical systems. Studies have been conducted to characterize the residual stress level as a function of deposition temperature, Si wafer and SiC coating thickness, and the ratios of methyltrichlorosilane to hydrogen and hydrogen chloride. Wafer curvature was used to monitor residual stress in combination with a laminated plate analysis. Compressive intrinsic (growth) stresses were measured with magnitudes in the range of 200-300MPa; however, these can be balanced with the tensile stress due to the thermal-expansion mismatch to leave near-zero stress at room temperature. The magnitude of the compressive intrinsic stress is consistent with previously reported values of surface stress in combination with the competition between grain-boundary energy and elastic strain energy.

  15. The Reference Return Ratio

    DEFF Research Database (Denmark)

    Nicolaisen, Jeppe; Faber Frandsen, Tove

    2008-01-01

    The paper introduces a new journal impact measure called The Reference Return Ratio (3R). Unlike the traditional Journal Impact Factor (JIF), which is based on calculations of publications and citations, the new measure is based on calculations of bibliographic investments (references) and returns...... (citations). A comparative study of the two measures shows a strong relationship between the 3R and the JIF. Yet, the 3R appears to correct for citation habits, citation dynamics, and composition of document types - problems that typically are raised against the JIF. In addition, contrary to traditional...

  16. Potential support ratios

    DEFF Research Database (Denmark)

    Kjærgaard, Søren; Canudas-Romo, Vladimir

    2017-01-01

    The ‘prospective potential support ratio’ has been proposed by researchers as a measure that accurately quantifies the burden of ageing, by identifying the fraction of a population that has passed a certain measure of longevity, for example, 17 years of life expectancy. Nevertheless......, the prospective potential support ratio usually focuses on the current mortality schedule, or period life expectancy. Instead, in this paper we look at the actual mortality experienced by cohorts in a population, using cohort life tables. We analyse differences between the two perspectives using mortality models...

  17. Coated Porous Si for High Performance On-Chip Supercapacitors

    Science.gov (United States)

    Grigoras, K.; Keskinen, J.; Grönberg, L.; Ahopelto, J.; Prunnila, M.

    2014-11-01

    High performance porous Si based supercapacitor electrodes are demonstrated. High power density and stability is provided by ultra-thin TiN coating of the porous Si matrix. The TiN layer is deposited by atomic layer deposition (ALD), which provides sufficient conformality to reach the bottom of the high aspect ratio pores. Our porous Si supercapacitor devices exhibit almost ideal double layer capacitor characteristic with electrode volumetric capacitance of 7.3 F/cm3. Several orders of magnitude increase in power and energy density is obtained comparing to uncoated porous silicon electrodes. Good stability of devices is confirmed performing several thousands of charge/discharge cycles.

  18. Crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses; Li2O-SiO2, Na2O-SiO2, Na2O-CaO-SiO2 kei glass no kessho sekishutsu kyodo

    Energy Technology Data Exchange (ETDEWEB)

    Tsutsumi, K.; Otake, J.; Nagasaka, T.; Hino, M. [Tohoku University, Sendai (Japan)

    1998-06-01

    It has been known that crystallization of mold powder is effective on the disturbance of heat transfer between mold and solidified shell in production of middle carbon steel slabs in continuous casting process. But it has not yet been made clear which composition of mold powder is the most suitable for crystallization. The crystallization behavior of Li2O-SiO2, Na2O-SiO2 and Na2O-CaO-SiO2 glasses was observed by differential thermal analysis (DTA) and hot-thermocouple methods with DTA in the present work. As a result, addition of alkaline metal and alkaline earth metal oxides to SiO2 increased the critical cooling rate for glass formation in binary system of Li2O-SiO2 and Na2O-SiO2 and Li2O-SiO2 system crystallized easier than Na2O-SiO2 system. In ternary system of Na2O-CaO-SiO2, addition of Na2O hurried the critical cooling rate at CaO/SiO2=0.93 mass ratio, but the rate was almost constant in the composition range of more than 15 mass% Na2O. The slag of CaO/SiO2=0.93 made the rate faster than the slag of CaO/SiO2=0.47 at constant content of 10mass% Na2O. 17 refs., 10 figs., 3 tabs.

  19. SiCloud

    DEFF Research Database (Denmark)

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  20. SI: The Stellar Imager

    Science.gov (United States)

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  1. U-Mo/Al-Si interaction: Influence of Si concentration

    International Nuclear Information System (INIS)

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  2. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  3. Tau hadronic branching ratios

    CERN Document Server

    Buskulic, Damir; De Bonis, I; Décamp, D; Ghez, P; Goy, C; Lees, J P; Lucotte, A; Minard, M N; Odier, P; Pietrzyk, B; Ariztizabal, F; Chmeissani, M; Crespo, J M; Efthymiopoulos, I; Fernández, E; Fernández-Bosman, M; Gaitan, V; Martínez, M; Orteu, S; Pacheco, A; Padilla, C; Palla, Fabrizio; Pascual, A; Perlas, J A; Sánchez, F; Teubert, F; Colaleo, A; Creanza, D; De Palma, M; Farilla, A; Gelao, G; Girone, M; Iaselli, Giuseppe; Maggi, G; Maggi, M; Marinelli, N; Natali, S; Nuzzo, S; Ranieri, A; Raso, G; Romano, F; Ruggieri, F; Selvaggi, G; Silvestris, L; Tempesta, P; Zito, G; Huang, X; Lin, J; Ouyang, Q; Wang, T; Xie, Y; Xu, R; Xue, S; Zhang, J; Zhang, L; Zhao, W; Bonvicini, G; Cattaneo, M; Comas, P; Coyle, P; Drevermann, H; Engelhardt, A; Forty, Roger W; Frank, M; Hagelberg, R; Harvey, J; Jacobsen, R; Janot, P; Jost, B; Kneringer, E; Knobloch, J; Lehraus, Ivan; Markou, C; Martin, E B; Mato, P; Minten, Adolf G; Miquel, R; Oest, T; Palazzi, P; Pater, J R; Pusztaszeri, J F; Ranjard, F; Rensing, P E; Rolandi, Luigi; Schlatter, W D; Schmelling, M; Schneider, O; Tejessy, W; Tomalin, I R; Venturi, A; Wachsmuth, H W; Wiedenmann, W; Wildish, T; Witzeling, W; Wotschack, J; Ajaltouni, Ziad J; Bardadin-Otwinowska, Maria; Barrès, A; Boyer, C; Falvard, A; Gay, P; Guicheney, C; Henrard, P; Jousset, J; Michel, B; Monteil, S; Pallin, D; Perret, P; Podlyski, F; Proriol, J; Rossignol, J M; Saadi, F; Fearnley, Tom; Hansen, J B; Hansen, J D; Hansen, J R; Hansen, P H; Nilsson, B S; Kyriakis, A; Simopoulou, Errietta; Siotis, I; Vayaki, Anna; Zachariadou, K; Blondel, A; Bonneaud, G R; Brient, J C; Bourdon, P; Passalacqua, L; Rougé, A; Rumpf, M; Tanaka, R; Valassi, Andrea; Verderi, M; Videau, H L; Candlin, D J; Parsons, M I; Focardi, E; Parrini, G; Corden, M; Delfino, M C; Georgiopoulos, C H; Jaffe, D E; Antonelli, A; Bencivenni, G; Bologna, G; Bossi, F; Campana, P; Capon, G; Chiarella, V; Felici, G; Laurelli, P; Mannocchi, G; Murtas, F; Murtas, G P; Pepé-Altarelli, M; Dorris, S J; Halley, A W; ten Have, I; Knowles, I G; Lynch, J G; Morton, W T; O'Shea, V; Raine, C; Reeves, P; Scarr, J M; Smith, K; Smith, M G; Thompson, A S; Thomson, F; Thorn, S; Turnbull, R M; Becker, U; Braun, O; Geweniger, C; Graefe, G; Hanke, P; Hepp, V; Kluge, E E; Putzer, A; Rensch, B; Schmidt, M; Sommer, J; Stenzel, H; Tittel, K; Werner, S; Wunsch, M; Beuselinck, R; Binnie, David M; Cameron, W; Colling, D J; Dornan, Peter J; Konstantinidis, N P; Moneta, L; Moutoussi, A; Nash, J; San Martin, G; Sedgbeer, J K; Stacey, A M; Dissertori, G; Girtler, P; Kuhn, D; Rudolph, G; Bowdery, C K; Brodbeck, T J; Colrain, P; Crawford, G; Finch, A J; Foster, F; Hughes, G; Sloan, Terence; Whelan, E P; Williams, M I; Galla, A; Greene, A M; Kleinknecht, K; Quast, G; Raab, J; Renk, B; Sander, H G; Wanke, R; Van Gemmeren, P; Zeitnitz, C; Aubert, Jean-Jacques; Bencheikh, A M; Benchouk, C; Bonissent, A; Bujosa, G; Calvet, D; Carr, J; Diaconu, C A; Etienne, F; Thulasidas, M; Nicod, D; Payre, P; Rousseau, D; Talby, M; Abt, I; Assmann, R W; Bauer, C; Blum, Walter; Brown, D; Dietl, H; Dydak, Friedrich; Ganis, G; Gotzhein, C; Jakobs, K; Kroha, H; Lütjens, G; Lutz, Gerhard; Männer, W; Moser, H G; Richter, R H; Rosado-Schlosser, A; Schael, S; Settles, Ronald; Seywerd, H C J; Saint-Denis, R; Wolf, G; Alemany, R; Boucrot, J; Callot, O; Cordier, A; Courault, F; Davier, M; Duflot, L; Grivaz, J F; Heusse, P; Jacquet, M; Kim, D W; Le Diberder, F R; Lefrançois, J; Lutz, A M; Musolino, G; Nikolic, I A; Park, H J; Park, I C; Schune, M H; Simion, S; Veillet, J J; Videau, I; Abbaneo, D; Azzurri, P; Bagliesi, G; Batignani, G; Bettarini, S; Bozzi, C; Calderini, G; Carpinelli, M; Ciocci, M A; Ciulli, V; Dell'Orso, R; Fantechi, R; Ferrante, I; Foà, L; Forti, F; Giassi, A; Giorgi, M A; Gregorio, A; Ligabue, F; Lusiani, A; Marrocchesi, P S; Messineo, A; Rizzo, G; Sanguinetti, G; Sciabà, A; Spagnolo, P; Steinberger, Jack; Tenchini, Roberto; Tonelli, G; Triggiani, G; Vannini, C; Verdini, P G; Walsh, J; Betteridge, A P; Blair, G A; Bryant, L M; Cerutti, F; Gao, Y; Green, M G; Johnson, D L; Medcalf, T; Mir, L M; Perrodo, P; Strong, J A; Bertin, V; Botterill, David R; Clifft, R W; Edgecock, T R; Haywood, S; Edwards, M; Maley, P; Norton, P R; Thompson, J C; Bloch-Devaux, B; Colas, P; Emery, S; Kozanecki, Witold; Lançon, E; Lemaire, M C; Locci, E; Marx, B; Pérez, P; Rander, J; Renardy, J F; Roussarie, A; Schuller, J P; Schwindling, J; Trabelsi, A; Vallage, B; Johnson, R P; Kim, H Y; Litke, A M; McNeil, M A; Taylor, G; Beddall, A; Booth, C N; Boswell, R; Cartwright, S L; Combley, F; Dawson, I; Köksal, A; Letho, M; Newton, W M; Rankin, C; Thompson, L F; Böhrer, A; Brandt, S; Cowan, G D; Feigl, E; Grupen, Claus; Lutters, G; Minguet-Rodríguez, J A; Rivera, F; Saraiva, P; Smolik, L; Stephan, F; Apollonio, M; Bosisio, L; Della Marina, R; Giannini, G; Gobbo, B; Ragusa, F; Rothberg, J E; Wasserbaech, S R; Armstrong, S R; Bellantoni, L; Elmer, P; Feng, Z; Ferguson, D P S; Gao, Y S; González, S; Grahl, J; Harton, J L; Hayes, O J; Hu, H; McNamara, P A; Nachtman, J M; Orejudos, W; Pan, Y B; Saadi, Y; Schmitt, M; Scott, I J; Sharma, V; Turk, J; Walsh, A M; Wu Sau Lan; Wu, X; Yamartino, J M; Zheng, M; Zobernig, G

    1996-01-01

    From 64492 selected \\tau-pair events, produced at the Z^0 resonance, the measurement of the tau decays into hadrons from a global analysis using 1991, 1992 and 1993 ALEPH data is presented. Special emphasis is given to the reconstruction of photons and \\pi^0's, and the removal of fake photons. A detailed study of the systematics entering the \\pi^0 reconstruction is also given. A complete and consistent set of tau hadronic branching ratios is presented for 18 exclusive modes. Most measurements are more precise than the present world average. The new level of precision reached allows a stringent test of \\tau-\\mu universality in hadronic decays, g_\\tau/g_\\mu \\ = \\ 1.0013 \\ \\pm \\ 0.0095, and the first measurement of the vector and axial-vector contributions to the non-strange hadronic \\tau decay width: R_{\\tau ,V} \\ = \\ 1.788 \\ \\pm \\ 0.025 and R_{\\tau ,A} \\ = \\ 1.694 \\ \\pm \\ 0.027. The ratio (R_{\\tau ,V} - R_{\\tau ,A}) / (R_{\\tau ,V} + R_{\\tau ,A}), equal to (2.7 \\pm 1.3) \\ \\%, is a measure of the importance of Q...

  4. Gd-Ni-Si system

    International Nuclear Information System (INIS)

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  5. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  6. Oblique roughness replication in strained SiGe/Si multilayers

    NARCIS (Netherlands)

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  7. Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

    Science.gov (United States)

    Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

    2017-07-01

    SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

  8. The characteristics of photo-CVD SiO{sub 2} and its application on SiC MIS UV photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.H.; Chang, C.S.; Chang, S.J.; Su, Y.K.; Chiou, Y.Z.; Liu, S.H.; Huang, B.R

    2003-07-15

    SiO{sub 2} layers were deposited onto SiC by photo-chemical vapor deposition (photo-CVD) using deuterium (D{sub 2}) lamp as the excitation source. For the photo-SiO{sub 2} deposited 500 deg. C, interface state density (D{sub it}) was estimated to be 5.66x10{sup 11} cm{sup -2} eV{sup -1}. With an applied electric field of 4 MV cm{sup -1}, it was found that the leakage current was only 3.15x10{sup -8} A cm{sup -2} for the photo-CVD SiO{sub 2} layer prepared at 500 deg. C. It was also found that photo-SiO{sub 2} could effectively suppress dark current of SiC-based photodetectors (PDs). It was found that we could reduce dark current of SiC-based PDs by about three orders of magnitude by the insertion of a 5 nm-thick photo-CVD SiO{sub 2} film in between Indium-tin-oxide (ITO) contact and the underneath SiC. Photocurrent to dark current ratio of ITO/SiO{sub 2}/SiC MIS PDs was also found to be much larger than that of conventional ITO/SiC Schottky barrier PDs.

  9. Applications of Si/SiGe heterostructures to CMOS devices

    International Nuclear Information System (INIS)

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  10. Near zero reflection by nanostructured anti-reflection coating design for Si substrates

    Science.gov (United States)

    Al-Fandi, Mohamed; Makableh, Yahia F.; Khasawneh, Mohammad; Rabady, Rabi

    2018-05-01

    The nanostructure design of near zero reflection coating for Si substrates by using ZnO Nanoneedles (ZnONN) is performed and optimized for the visible spectral range. The design investigates the ZnONN tip to body ratio effect on the anti-reflection coating properties. Different tip to body ratios are used on Si substrates. Around zero reflection is achieved by the Nanoneedles structure design presented in this work, leading to minimal reflection losses from the Si surface. The current design evolves a solution to optical losses and surface contamination effects associated with Si solar cells.

  11. Nitrogen doping efficiency during vapor phase epitaxy of 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rowland, L.B.; Brandt, C.D. [Northrop Grumman Science and Technology Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman Advanced Technology Lab., Baltimore, MD (United States)

    1998-06-01

    This work examines the interrelationships among doping efficiency, mole fraction, and Si/C ratio for intentional doping of 4H-SiC during vapor phase epitaxy using N{sub 2}. For four Si/C ratios, the doping concentration increased linearly as a function of increasing N{sub 2} partial pressure with a slope of 1.0 {+-} 0.03. Variation of propane mole fraction while the SiH{sub 4} and N{sub 2} mole fractions were kept constant revealed two different modes of nitrogen incorporation, corresponding to carbon-rich and silicon-rich conditions. (orig.) 14 refs.

  12. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Rongsheng, E-mail: rschen@ust.hk; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-08-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm{sup 2}/Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10{sup 6}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN{sub x}/SiO{sub 2}/SiN{sub x}/SiO{sub 2} passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress.

  13. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  14. Peak power ratio generator

    Science.gov (United States)

    Moyer, R.D.

    A peak power ratio generator is described for measuring, in combination with a conventional power meter, the peak power level of extremely narrow pulses in the gigahertz radio frequency bands. The present invention in a preferred embodiment utilizes a tunnel diode and a back diode combination in a detector circuit as the only high speed elements. The high speed tunnel diode provides a bistable signal and serves as a memory device of the input pulses for the remaining, slower components. A hybrid digital and analog loop maintains the peak power level of a reference channel at a known amount. Thus, by measuring the average power levels of the reference signal and the source signal, the peak power level of the source signal can be determined.

  15. Preparation and oxidation protection of CVD SiC/a-BC/SiC coatings for 3D C/SiC composites

    International Nuclear Information System (INIS)

    Liu Yongsheng; Zhang Litong; Cheng Laifei; Yang Wenbin; Zhang Weihua; Xu Yongdong

    2009-01-01

    An amorphous boron carbide (a-BC) coating was prepared by LPCVD process from BCl 3 -CH 4 -H 2 -Ar system. XPS result showed that the boron concentration was 15.0 at.%, and carbon was 82.0 at.%. One third of boron was distributed to a bonding with carbon and 37.0 at.% was dissolved in graphite lattice. A multiple-layered structure of CVD SiC/a-BC/SiC was coated on 3D C/SiC composites. Oxidation tests were conducted at 700, 1000, and 1200 deg. C in 14 vol.% H 2 O/8 vol.% O 2 /78 vol.% Ar atmosphere up to 100 h. The 3D C/SiC composites with the modified coating system had a good oxidation resistance. This resulted in the high strength retained ratio of the composites even after the oxidation.

  16. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  17. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  18. Effects of a Ta interlayer on the phase transition of TiSi2 on Si(111)

    Science.gov (United States)

    Jeon, Hyeongtag; Jung, Bokhee; Kim, Young Do; Yang, Woochul; Nemanich, R. J.

    2000-09-01

    This study examines the effects of a thin Ta interlayer on the formation of TiSi2 on Si(111) substrate. The Ta interlayer was introduced by depositing Ta and Ti films sequentially on an atomically clean Si(111) substrate in an ultrahigh vacuum (UHV) system. Samples of 100 Å Ti with 5 and 10 Å Ta interlayers were compared to similar structures without an interlayer. After deposition, the substrates were annealed for 10 min, in situ, at temperatures between 500 and 750 °C in 50 °C increments. The TiSi2 formation with and without the Ta interlayer was analyzed with an X-ray diffractometer, Auger electron spectroscopy (AES), Scanning electron microscopy (SEM), transmission electron microscopy (TEM), and a four-point probe. The AES analysis data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si(111) substrate. The C 49-C 54 TiSi2 phase transition temperature was lowered by ˜200 °C. The C 49-C 54 TiSi2 phase transition temperature was 550 °C for the samples with a Ta interlayer and was 750 °C for the samples with no Ta interlayer. The sheet resistance of the Ta interlayered Ti silicide showed lower values of resistivity at low temperatures which indicated the change in phase transition temperature. The C 54 TiSi2 displayed different crystal orientation when the Ta interlayer was employed. The SEM and TEM micrographs showed that the TiSi2 with a Ta interlayer significantly suppressed the tendency to islanding and surface agglomeration.

  19. Wafer-scale fabrication of uniform Si nanowire arrays using the Si wafer with UV/Ozone pretreatment

    International Nuclear Information System (INIS)

    Bai, Fan; Li, Meicheng; Huang, Rui; Yu, Yue; Gu, Tiansheng; Chen, Zhao; Fan, Huiyang; Jiang, Bing

    2013-01-01

    The electroless etching technique combined with the process of UV/Ozone pretreatment is presented for wafer-scale fabrication of the silicon nanowire (SiNW) arrays. The high-level uniformity of the SiNW arrays is estimated by the value below 0.2 of the relative standard deviation of the reflection spectra on the 4-in. wafer. Influence of the UV/Ozone pretreatment on the formation of SiNW arrays is investigated. It is seen that a very thin SiO 2 produced by the UV/Ozone pretreatment improves the uniform nucleation of Ag nanoparticles (NPs) on the Si surface because of the effective surface passivation. Meanwhile, the SiO 2 located among the adjacent Ag NPs can obstruct the assimilation growth of Ag NPs, facilitating the deposition of the uniform and dense Ag NPs catalysts, which induces the formation of the SiNW arrays with good uniformity and high filling ratio. Furthermore, the remarkable antireflective and hydrophobic properties are observed for the SiNW arrays which display great potential in self-cleaning antireflection applications

  20. Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

    Science.gov (United States)

    Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

    2016-04-01

    A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

  1. Interface characteristics in Co2MnSi/Ag/Co2MnSi trilayer

    International Nuclear Information System (INIS)

    Li, Yang; Chen, Hong; Wang, Guangzhao; Yuan, Hongkuan

    2016-01-01

    Highlights: • Inferface DO 3 disorder is most favorable in Co 2 MnSi/Ag/Co 2 MnSi trilayer. • Interface itself and inferface DO 3 disorder destroy the half-metallicity of interface layers. • Magnetoresistance is reduced by the interface itself and interface disorder. • Magnetotransport coefficient is largely reduced by the interface itself and interface disorder. - Abstract: Interface characteristics of Co 2 MnSi/Ag/Co 2 MnSi trilayer have been investigated by means of first-principles. The most likely interface is formed by connecting MnSi-termination to the bridge site between two Ag atoms. As annealed at high temperature, the formation of interface DO 3 disorder is most energetically favorable. The spin polarization is reduced by both the interface itself and interface disorder due to the interface state occurs in the minority-spin gap. As a result, the magneto-resistance ratio has a sharp drop based on the estimation of a simplified modeling.

  2. Influence of oxygen doping on resistive-switching characteristic of a-Si/c-Si device

    Science.gov (United States)

    Zhang, Jiahua; Chen, Da; Huang, Shihua

    2017-12-01

    The influence of oxygen doping on resistive-switching characteristics of Ag/a-Si/p+-c-Si device was investigated. By oxygen doping in the growth process of amorphous silicon, the device resistive-switching performances, such as the ON/OFF resistance ratios, yield and stability were improved, which may be ascribed to the significant reduction of defect density because of oxygen incorporation. The device I-V characteristics are strongly dependent on the oxygen doping concentration. As the oxygen doping concentration increases, the Si-rich device gradually transforms to an oxygen-rich device, and the device yield, switching characteristics, and stability may be improved for silver/oxygen-doped a-Si/p+-c-Si device. Finally, the device resistive-switching mechanism was analyzed. Project supported by the Zhejiang Provincial Natural Science Foundation of China (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

  3. Influence wt.% of SiC and borax on the mechanical properties of AlSi-Mg-TiB-SiC composite by the method of semi solid stir casting

    Science.gov (United States)

    Bhiftime, E. I.; Guterres, Natalino F. D. S.; Haryono, M. B.; Sulardjaka, Nugroho, Sri

    2017-04-01

    SiC particle reinforced metal matrix composites (MMCs) with solid semi stir casting method is becoming popular in recent application (automotive, aerospace). Stirring the semi solid condition is proven to enhance the bond between matrix and reinforcement. The purpose of this study is to investigate the effect of the SiC wt.% and the addition of borax on mechanical properties of composite AlSi-Mg-TiB-SiC and AlSi-Mg-TiB-SiC/Borax. Specimens was tested focusing on the density, porosity, tensile test, impact test microstructure and SEM. AlSi is used as a matrix reinforced by SiC with percentage variations (10, 15, 20 wt.%). Giving wt.% Borax which is the ratio of 1: 4 between wt.% SiC. The addition of 1.5% of TiB gives grain refinement. The use of semi-solid stir casting method is able to increase the absorption of SiC particles into a matrix AlSi evenly. The improved composite presented here can be used as a guideline to make a new composite.

  4. The Liquidity Coverage Ratio: the need for further complementary ratios?

    OpenAIRE

    Ojo, Marianne

    2013-01-01

    This paper considers components of the Liquidity Coverage Ratio – as well as certain prevailing gaps which may necessitate the introduction of a complementary liquidity ratio. The definitions and objectives accorded to the Liquidity Coverage Ratio (LCR) and Net Stable Funding Ratio (NSFR) highlight the focus which is accorded to time horizons for funding bank operations. A ratio which would focus on the rate of liquidity transformations and which could also serve as a complementary metric gi...

  5. Simultaneous fabrication of very high aspect ratio positive nano- to milliscale structures.

    Science.gov (United States)

    Chen, Long Qing; Chan-Park, Mary B; Zhang, Qing; Chen, Peng; Li, Chang Ming; Li, Sai

    2009-05-01

    A simple and inexpensive technique for the simultaneous fabrication of positive (i.e., protruding), very high aspect (>10) ratio nanostructures together with micro- or millistructures is developed. The method involves using residual patterns of thin-film over-etching (RPTO) to produce sub-micro-/nanoscale features. The residual thin-film nanopattern is used as an etching mask for Si deep reactive ion etching. The etched Si structures are further reduced in size by Si thermal oxidation to produce amorphous SiO(2), which is subsequently etched away by HF. Two arrays of positive Si nanowalls are demonstrated with this combined RPTO-SiO(2)-HF technique. One array has a feature size of 150 nm and an aspect ratio of 26.7 and another has a feature size of 50 nm and an aspect ratio of 15. No other parallel reduction technique can achieve such a very high aspect ratio for 50-nm-wide nanowalls. As a demonstration of the technique to simultaneously achieve nano- and milliscale features, a simple Si nanofluidic master mold with positive features with dimensions varying continuously from 1 mm to 200 nm and a highest aspect ratio of 6.75 is fabricated; the narrow 200-nm section is 4.5 mm long. This Si master mold is then used as a mold for UV embossing. The embossed open channels are then closed by a cover with glue bonding. A high aspect ratio is necessary to produce unblocked closed channels after the cover bonding process of the nanofluidic chip. The combined method of RPTO, Si thermal oxidation, and HF etching can be used to make complex nanofluidic systems and nano-/micro-/millistructures for diverse applications.

  6. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  7. Irradiation effect on Nite-SiC/SiC composites

    International Nuclear Information System (INIS)

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  8. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    DEFF Research Database (Denmark)

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  9. Energy Profit Ratio Compared

    International Nuclear Information System (INIS)

    Amano, Osamu

    2007-01-01

    We need more oil energy to take out oil under the ground. Limit resources make us consider other candidates of energy source instead of oil. Electricity shall be the main role more and more like electric vehicles and air conditioners so we should consider electricity generation ways. When we consider what kind of electric power generation is the best or suitable, we should not only power generation plant but whole process from mining to power generation. It is good way to use EPR, Energy Profit Ratio, to analysis which type is more efficient and which part is to do research and development when you see the input breakdown analysis. Electricity by the light water nuclear power plant, the hydrogen power plant and the geothermal power plant are better candidates from EPR analysis. Forecasting the world primly energy supply in 2050, it is said that the demand will be double of the demand in 2000 and the supply will not be able to satisfy the demand in 2050. We should save 30% of the demand and increase nuclear power plants 3.5 times more and recyclable energy like hydropower plants 3 times more. When the nuclear power plants are 3.5 times more then uranium peak will come and we will need breed uranium. I will analysis the EPR of FBR. Conclusion: A) the EPR of NPS in Japan is 17.4 and it is the best of all. B) Many countries will introduce new nuclear power plants rapidly may be 3.5 times in 2050. C) Uranium peak will happen around 2050. (author)

  10. Optimization of the luminescence emission of Si nanocrystals synthesized from non-stoichiometric Si oxides using a Central Composite Design of the deposition process

    International Nuclear Information System (INIS)

    Morana, B.; Sande, J.C.G. de; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2008-01-01

    Si oxide films with a controlled excess of Si were deposited on Si wafers by LPCVD using Si 2 H 6 and O 2 , thermally annealed to 1100 deg. C for 1 h to form Si nanocrystals embedded in SiO 2 and subsequently annealed at 450 deg. C in forming gas. The samples were characterized by Fourier transform infrared spectroscopy, spectroscopic ellipsometry and cathodoluminescence spectroscopy. The excess of Si in the as-deposited samples, ranging from 0 to 70% in volume, was obtained from the ellipsometry data analysis. After annealing at 1100 deg. C, the samples show a luminescence band (peaking at 665 nm) at 80 K and at room temperature which is associated to the presence of Si nanocrystals. The growth rate, the excess of Si incorporated to the films and the intensity of the luminescence band were modelled using a Face-Centered Central Composite Design as a function of the main deposition variables (pressure, 185-300 mTorr; temperature, 250-400 deg. C; Si 2 H 6 /O 2 flow ratio, 2-5) aiming to control the growth process and the incorporation of Si in excess as well as to determine the experimental conditions that yield the samples with the maximum intensity of the luminescence emission

  11. Strategies for Improving siRNA-Induced Gene Silencing Efficiency.

    Science.gov (United States)

    Safari, Fatemeh; Rahmani Barouji, Solmaz; Tamaddon, Ali Mohammad

    2017-12-01

    Purpose: Human telomerase reverse transcriptase (hTERT) plays a crucial role in tumorigenesis and progression of cancers. Gene silencing of hTERT by short interfering RNA (siRNA) is considered as a promising strategy for cancer gene therapy. Various algorithms have been devised for designing a high efficient siRNA which is a significant issue in the clinical usage. Thereby, in the present study, the relation of siRNA designing criteria and the gene silencing efficiency was evaluated. Methods: The siRNA sequences were designed and characterized by using on line soft wares. Cationic co-polymer (polyethylene glycol-g-polyethylene imine (PEG-g-PEI)) was used for the construction of polyelectrolyte complexes (PECs) containing siRNAs. The cellular uptake of the PECs was evaluated. The gene silencing efficiency of different siRNA sequences was investigated and the effect of observing the rational designing on the functionality of siRNAs was assessed. Results: The size of PEG-g-PEI siRNA with N/P (Nitrogen/Phosphate) ratio of 2.5 was 114 ± 0.645 nm. The transfection efficiency of PECs was desirable (95.5% ± 2.4%.). The results of Real-Time PCR showed that main sequence (MS) reduced the hTERT expression up to 90% and control positive sequence (CPS) up to 63%. These findings demonstrated that the accessibility to the target site has priority than the other criteria such as sequence preferences and thermodynamic features. Conclusion: siRNA opens a hopeful window in cancer therapy which provides a convenient and tolerable therapeutic approach. Thereby, using the set of criteria and rational algorithms in the designing of siRNA remarkably affect the gene silencing efficiency.

  12. The effect of carbon mole ratio on the fabrication of silicon carbide

    Directory of Open Access Journals (Sweden)

    Sutham Niyomwas

    2008-03-01

    Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

  13. Effect of hydrogen ion beam treatment on Si nanocrystal/SiO_2 superlattice-based memory devices

    International Nuclear Information System (INIS)

    Fu, Sheng-Wen; Chen, Hui-Ju; Wu, Hsuan-Ta; Chuang, Bing-Ru; Shih, Chuan-Feng

    2016-01-01

    Graphical abstract: - Highlights: • Memory window and retention properties are improved employing HIBAS technique. • The O/Si ratio and radiative recombination are changed by HIBAS. • Memory properties are affected not only by Si NCs and O/Si ratio but also the RDCs. • The mechanism of hydrogen ion beam alters the memory properties is investigated. - Abstract: This study presents a novel route for synthesizing silicon-rich oxide (SRO)/SiO_2 superlattice-based memory devices with an improved memory window and retention properties. The SiO_2 and SRO superlattices are deposited by reactive sputtering. Specifically, the hydrogen ion beam is used to irradiate the SRO layer immediately after its deposition in the vacuum chamber. The use of the hydrogen ion beam was determined to increase oxygen content and the density of the Si nanocrystals. The memory window increased from 16 to 25.6 V, and the leakage current decreased significantly by two orders, to under ±20 V, for the hydrogen ion beam-prepared devices. This study investigates the mechanism into how hydrogen ion beam treatment alters SRO films and influences memory properties.

  14. Synthesis and characterization of laminated Si/SiC composites

    Science.gov (United States)

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  15. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  16. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  17. Periodically structured Si pillars for high-performing heterojunction photodetectors

    Science.gov (United States)

    Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

    2015-03-01

    A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

  18. Effect of surfactant concentration on the size of one-pot synthesized Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Su Jung; Kim, Tae Woo; Lee, Myong Euy [Dept. of Chemistry and Medical Chemistry, College of Science and Technology, Research and EducationCenter for Advanced Silicon Materials, Yonsei University, Wonju (Korea, Republic of); Cho, Hyeon Mo [University College, Yonsei University, Incheon (Korea, Republic of); Yoon, Sang Woong [Youngchang Chemical Co., LTD, Seongnam (Korea, Republic of); Ryou, Joon Sung [Advanced Technology R and D Center, SKC, Suwon (Korea, Republic of)

    2015-07-15

    The effect of surfactant concentration on the synthesis of Si nanoparticles (NPs) was studied. Hexyl Si NPs were synthesized using one-pot synthetic methodology with different ratios of SiCl{sub 4}:HexylSiCl{sub 3} (1:1, 1:2, 1:3, 1:6) to observe the effect of surfactant concentration on the size of Si NPs. In Fourier transform infrared spectroscopy analysis, the Si–H stretching band and the characteristic Si–O–Si bands decreased and eventually disappeared with increasing hexyltrichlorosilane concentration. This suggests that the level of oxidation decreased with excess amounts of hexyltrichlorosilane because the surface area of exposed Si NPs without hexyl capping groups was reduced. Results of transmission electron microscopy and particle size analysis showed that the average diameter of hexyl Si NPs increased slightly from low surfactant concentration (SiCl{sub 4}:HexylSiCl{sub 3} = 1:1) to high concentration (1:6). This might be caused due to the relationship between the surfactant concentration effect and the core material part effect of hexyltrichlorosilane. Agglomerated Si NPs were observed and their luminescence bands were not shifted because the Si NPs were capped by alkyl groups to prevent aggregation.

  19. Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

    Energy Technology Data Exchange (ETDEWEB)

    Suh, Sungin; Kim, Jun-Rae; Kim, Seongkyung; Hwang, Cheol Seong; Kim, Hyeong Joon, E-mail: thinfilm@snu.ac.kr [Department of Materials Science and Engineering with Inter-University Semiconductor Research Center (ISRC), Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 08826 (Korea, Republic of); Ryu, Seung Wook, E-mail: tazryu78@gmail.com [Department of Electrical Engineering, Stanford University, Stanford, California 94305-2311 (United States); Cho, Seongjae [Department of Electronic Engineering and New Technology Component & Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 13120 (Korea, Republic of)

    2016-01-15

    It has not been an easy task to deposit SiN at low temperature by conventional plasma-enhanced atomic layer deposition (PE-ALD) since Si organic precursors generally have high activation energy for adsorption of the Si atoms on the Si-N networks. In this work, in order to achieve successful deposition of SiN film at low temperature, the plasma processing steps in the PE-ALD have been modified for easier activation of Si precursors. In this modification, the efficiency of chemisorption of Si precursor has been improved by additional plasma steps after purging of the Si precursor. As the result, the SiN films prepared by the modified PE-ALD processes demonstrated higher purity of Si and N atoms with unwanted impurities such as C and O having below 10 at. % and Si-rich films could be formed consequently. Also, a very high step coverage ratio of 97% was obtained. Furthermore, the process-optimized SiN film showed a permissible charge-trapping capability with a wide memory window of 3.1 V when a capacitor structure was fabricated and measured with an insertion of the SiN film as the charge-trap layer. The modified PE-ALD process using the activated Si precursor would be one of the most practical and promising solutions for SiN deposition with lower thermal budget and higher cost-effectiveness.

  20. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    International Nuclear Information System (INIS)

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  1. EFFECT OF SILICON CONTENT ON MACHINABILITY OF Al-Si ALLOYS

    Directory of Open Access Journals (Sweden)

    Birol Akyüz

    2016-09-01

    Full Text Available In this study the effect of the change in the amount of Silicon (Si occuring in Al-Si alloys on mechanical and machinability properties of the alloy was investigated. The change in mechanical properties and microstructure, which depends on the increase in Si percentage, and the effects of this change on Flank Build-up (FBU, wear on the cutting edge, surface roughness, and machinability were also studied. Alloys in different ratios of Si (i.e. 2 to 12 wt %, were employed in the study. The specimens for tests were obtained by casting into metal moulds. The results obtained from experimental studies indicate improved mechanical properties and machinability, depending on the rise in Si percentage in Al-Si alloys. It is also observed that the increase in Si percentage enhanced surface quality.

  2. Characterization of β-FeSi II films as a novel solar cell semiconductor

    Science.gov (United States)

    Fukuzawa, Yasuhiro; Ootsuka, Teruhisa; Otogawa, Naotaka; Abe, Hironori; Nakayama, Yasuhiko; Makita, Yunosuke

    2006-04-01

    β-FeSi II is an attractive semiconductor owing to its extremely high optical absorption coefficient (α>10 5 cm -1), and is expected to be an ideal semiconductor as a thin film solar cell. For solar cell use, to prepare high quality β-FeSi II films holding a desired Fe/Si ratio, we chose two methods; one is a molecular beam epitaxy (MBE) method in which Fe and Si were evaporated by using normal Knudsen cells, and occasionally by e-gun for Si. Another one is the facing-target sputtering (FTS) method in which deposition of β-FeSi II films is made on Si substrate that is placed out of gas plasma cloud. In both methods to obtain β-FeSi II films with a tuned Fe/Si ratio, Fe/Si super lattice was fabricated by varying Fe and Si deposition thickness. Results showed significant in- and out-diffusion of host Fe and Si atoms at the interface of Si substrates into β-FeSi II layers. It was experimentally demonstrated that this diffusion can be suppressed by the formation of template layer between the epitaxial β-FeSi II layer and the substrate. The template layer was prepared by reactive deposition epitaxy (RDE) method. By fixing the Fe/Si ratio as precisely as possible at 1/2, systematic doping experiments of acceptor (Ga and B) and donor (As) impurities into β-FeSi II were carried out. Systematical changes of electron and hole carrier concentration in these samples along variation of incorporated impurities were observed through Hall effect measurements. Residual carrier concentrations can be ascribed to not only the remaining undesired impurities contained in source materials but also to a variety of point defects mainly produced by the uncontrolled stoichiometry. A preliminary structure of n-β-FeSi II/p-Si used as a solar cell indicated a conversion efficiency of 3.7%.

  3. GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Neumann, Richard; Merzsch, Stephan; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany)

    2010-07-15

    GaN nanorods (NRs) show promising applications in high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In this work, we performed GaN nanostructures growth by pre-patterning the Si and AlN/Si substrates. The pattern was transferred to Si and AlN/Si substrates by photolithography and inductively-coupled plasma etching. GaN NRs were grown on these templates by metal-organic vapour phase epitaxy (MOVPE). GaN grown on Si pillar templates show a truncated pyramidal structure. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the GaN nanostructures and terminate. GaN growth can also be observed on the sidewalls and bottom surface between the Si pillars. A simple phenomenological model is proposed to explain the GaN nanostructure growth on Si pillar templates. Based on this model, we developed another growth method, by which we grow GaN rod structures on pre-patterned AlN/Si templates. By in-situ nitridation and decreasing of the V/III ratio, we found that GaN rods only grew on the patterned AlN/Si dots with an aspect ratio of about 1.5 - 2. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Positron annihilation at the Si/SiO2 interface

    International Nuclear Information System (INIS)

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  5. Formation of Si/Ge/Si heterostructures with quantum dots

    International Nuclear Information System (INIS)

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  6. Solid-state {sup 27}Al and {sup 29}Si NMR investigations on Si-substituted hydrogarnets

    Energy Technology Data Exchange (ETDEWEB)

    Rivas Mercury, J.M. [Instituto de Ceramica y Vidrio, CSIC, Kelsen, 5, 28049 Cantoblanco-Madrid (Spain); Pena, P. [Instituto de Ceramica y Vidrio, CSIC, Kelsen, 5, 28049 Cantoblanco-Madrid (Spain)]. E-mail: ppena@icv.csic.es; Aza, A.H. de [Instituto de Ceramica y Vidrio, CSIC, Kelsen, 5, 28049 Cantoblanco-Madrid (Spain); Turrillas, X. [Instituto de Ciencias de la Construccion Eduardo Torroja, CSIC, Serrano Galvache, 4, 28033 Madrid (Spain); Sobrados, I. [Instituto de Ciencia de Materiales, CSIC, Sor Juana Ines de la Cruz, 3, 28049 Cantoblanco-Madrid (Spain); Sanz, J. [Instituto de Ciencia de Materiales, CSIC, Sor Juana Ines de la Cruz, 3, 28049 Cantoblanco-Madrid (Spain)

    2007-02-15

    Partially deuterated Ca{sub 3}Al{sub 2}(SiO{sub 4}){sub 3-x}(OH){sub 4x} hydrates prepared by a reaction in the presence of D{sub 2}O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by {sup 29}Si and {sup 27}Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The {sup 29}Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca{sub 3}Al{sub 2}(SiO{sub 4}){sub 3-x}(OH){sub 4x} was followed by {sup 27}Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH){sub 6} and Al(OSi)(OH){sub 5} environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data.

  7. Combined RBS and TEM characterization of nano-SiGe layers embedded in SiO2

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Sangrador, J.; Rodriguez, A.; Rodriguez, T.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Grazing incidence RBS has been tested as a technique to detect and characterize SiGe nanoparticles embedded in a SiO 2 matrix. Suitable structures were deposited by low pressure chemical vapour deposition and characterized by TEM and RBS. The layers containing nanoparticles have been modelled by stacks of sublayers consisting of SiGeO layers with compositions calculated according to presumed shapes, sizes, Si/Ge ratios and particle area densities and used as input for RUMP. The nanoparticle parameters obtained by fitting the experimental RBS spectra agree well with the findings by TEM. This demonstrates that RBS is a useful and fast technique to characterize this kind of structures

  8. The intergranular corrosion behavior of 6000-series alloys with different Mg/Si and Cu content

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Yun; Liu, Qing, E-mail: qingliu@cqu.edu.cn; Jia, Zhihong, E-mail: zhihongjia@cqu.edu.cn; Xing, Yuan; Ding, Lipeng; Wang, Xueli

    2017-05-31

    Highlights: • High Cu alloy with high Mg/Si ratio has the best comprehensive property. • Addition of excess Mg could improve the intergranular corrosion resistance. • Si containing particles on the grain boundaries of Si-rich alloys promote IGC. • IGC susceptibility depends primarily on Cu content and secondarily on Mg/Si ratio. - Abstract: 6000-series aluminium alloys with high Cu or excess Si addition were susceptible to intergranular corrosion (IGC). In order to obtain good IGC resistance, four alloys with low/high Cu and various Mg/Si ratios were designed. The corrosion behaviour of four alloys was investigated by accelerated corrosion test, electrochemical test and electron microscopies. It was revealed that IGC susceptibility of alloys was the result of microgalvanic coupling between the noble grain boundary precipitates and the adjacent precipitates free zone (PFZ), which was closely related to a combination of Cu content and the Mg/Si ratio. Excess Mg could improve the IGC resistance of alloys by forming discontinuous precipitates on the grain boundaries. The designed alloy with high Cu and excess Mg has the same corrosion level as the commercial alloy with low Cu and excess Si, which provides possibility for developing new alloy.

  9. Transformation from amorphous to nano-crystalline SiC thin films ...

    Indian Academy of Sciences (India)

    Administrator

    phous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering ... Auger electron spectroscopy showed that the carbon incorporation in the .... with a 514 nm Ar+ laser excitation source and the laser.

  10. siRNAs Targeting Viral Protein 5: The Major Capsid Protein of ...

    African Journals Online (AJOL)

    Purpose: To investigate whether siRNA targeting viral protein 5 (VP5) can become a new treatment for herpes simplex virus type 1 (HSV-1). Methods: Flow cytometry was performed to determine the ratio of siRNA and lipo2000 to reach the highest transfection efficiency. Western blot and q-PCR were performed to determine ...

  11. Role of yttria-stabilized zirconia produced by ion-beam-assisted deposition on the properties of RuO2 on SiO2/Si

    International Nuclear Information System (INIS)

    Jia, Q.X.; Arendt, P.; Groves, J.R.; Fan, Y.; Roper, J.M.; Foltyn, S.R.

    1998-01-01

    Highly conductive biaxially textured RuO 2 thin films were deposited on technically important SiO 2 /Si substrates by pulsed laser deposition, where yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) was used as a template to enhance the biaxial texture of RuO 2 on SiO 2 /Si. The biaxially oriented RuO 2 had a room-temperature resistivity of 37 μΩ-cm and residual resistivity ratio above 2. We then deposited Ba 0.5 Sr 0.5 TiO 3 thin films on RuO 2 /IBAD-YSZ/SiO 2 /Si. The Ba 0.5 Sr 0.5 TiO 3 had a pure (111) orientation normal to the substrate surface and a dielectric constant above 360 at 100 kHz. copyright 1998 Materials Research Society

  12. Effect of boron-doping on the luminescent and electrical properties of a CdS/Si heterostructure based on Si nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Chemistry, Henan Polytechnic University, Jiaozuo 454000 (China); Wang, Xiao Bo [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cai, Xiao Jun [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2015-05-25

    Highlights: • B-doped CdS/Si-NPA heterostructure was prepared by a CBD method. • B-doping does not affect the crystal structure and surface morphology of CdS/Si-NPA. • The optical/electrical properties of CdS/Si-NPA could be tuned by changing [B]/[Cd] ratio. • CdS/Si-NPA with optimal physical properties could be prepared with [B]/[Cd] = 0.01. • The method may find applications in preparing CdS/Si-NPA devices with high device performances. - Abstract: Using silicon nanoporous pillar array (Si-NPA) as substrates and boric acid as dopant source, a series of CdS/Si nanoheterostructures were prepared by growing B-doped CdS thin films on Si-NPA via a chemical bath deposition (CBD) method. The structural, optical and electrical properties of CdS/Si-NPA were studied as a function of the [B]/[Cd] ratio of the initial CBD solutions. Our results disclosed that B concentration could be tuned effectively through changing the ratio of [B]/[Cd], which would bring large variation on the optical and electrical properties of CdS/Si-NPA without affecting its crystal structure and surface morphology. The samples with optimal optical and electrical properties were prepared with [B]/[Cd] = 0.01, in which the physical properties of relatively strong light absorption, small electrical resistivity, low turn-on voltage, small leakage current density and high breakdown voltage could be obtained. These results indicated that B-doping might be an effective path for promoting the performance of the optoelectronic devices based on CdS/Si-NPA.

  13. Study of two-dimensional hole gas at Si/SiGe/Si inverted interface

    International Nuclear Information System (INIS)

    Sadeghazdeh, M.A.; Mironov, O.A.; Parry, C.P.; Philips, P.J.; Parker, E.H.C.; Wahll, T.E.; Emeleus, C.J.

    1998-01-01

    We have studied the transport of two-dimensional hole gas (2DHG) at the inverted interface of a strained Si 0.8 Ge 0.2 quantum well. By application of bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n s can be controlled, in the range of (1.5-5.2)x10 11 cm -2 . At temperature T = 033 K, the Hall mobility is 4650 cm 2 V -1 s -1 at the maximum carrier density. For lower sheet densities (n s 11 cm -2 ) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m* = (0.25 → 0.28)m o and the ratio of transport to quantum lifetimes α = (0.92 → 0.85) for the corresponding carrier density change of n s = (5.2 → 2.5)x10 11 cm -2 . These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n s , short range interface roughness scattering. (author)

  14. A Three-Step Atomic Layer Deposition Process for SiN x Using Si2Cl6, CH3NH2, and N2 Plasma.

    Science.gov (United States)

    Ovanesyan, Rafaiel A; Hausmann, Dennis M; Agarwal, Sumit

    2018-06-06

    We report a novel three-step SiN x atomic layer deposition (ALD) process using Si 2 Cl 6 , CH 3 NH 2 , and N 2 plasma. In a two-step process, nonhydrogenated chlorosilanes such as Si 2 Cl 6 with N 2 plasmas lead to poor-quality SiN x films that oxidize rapidly. The intermediate CH 3 NH 2 step was therefore introduced in the ALD cycle to replace the NH 3 plasma step with a N 2 plasma, while using Si 2 Cl 6 as the Si precursor. This three-step process lowers the atomic H content and improves the film conformality on high-aspect-ratio nanostructures as Si-N-Si bonds are formed during a thermal CH 3 NH 2 step in addition to the N 2 plasma step. During ALD, the reactive surface sites were monitored using in situ surface infrared spectroscopy. Our infrared spectra show that, on the post-N 2 plasma-treated SiN x surface, Si 2 Cl 6 reacts primarily with the surface -NH 2 species to form surface -SiCl x ( x = 1, 2, or 3) bonds, which are the reactive sites during the CH 3 NH 2 cycle. In the N 2 plasma step, reactive -NH 2 surface species are created because of the surface H available from the -CH 3 groups. At 400 °C, the SiN x films have a growth per cycle of ∼0.9 Å with ∼12 atomic percent H. The films grown on high-aspect-ratio nanostructures have a conformality of ∼90%.

  15. Electrochemical performance of DVB-modified SiOC and SiCN polymer-derived negative electrodes for lithium-ion batteries

    International Nuclear Information System (INIS)

    Liu, Guanwei; Kaspar, Jan; Reinold, Lukas Mirko; Graczyk-Zajac, Magdalena; Riedel, Ralf

    2013-01-01

    Highlights: • Polymer-derived SiCN and SiOC ceramics are studied as anode for Li-ion batteries. • Ceramic precursors are modified in order to increase the carbon content. • Ceramic matrix stabilizes free carbon phase. • Stabilizing role is lost once the amount of carbon exceeds a threshold value. -- Abstract: Chemical modification of commercially available polyorganosilazane (HTT1800) and polyorganosiloxane (Polyramic RD-684a) with divinylbenzene (DVB) is accomplished via hydrosilylation reaction. The incorporation of DVB leads to an increase of the free carbon amount after pyrolysis within the corresponding SiCN and SiOC ceramics. The modification is carried out with lower, equal and higher stoichiometric ratios of the Si-H to C=C groups present in the Si-based polymer and DVB. FTIR results indicate a complete consumption of the Si-H bonds in the case of the stoichiometric amount of DVB and polymer RD-684a, while for HTT1800 neither the stoichiometric ratio nor DVB excess leads to a complete consumption of the Si-H groups. For both SiCN and SiOC ceramics the carbon content is found to increase with the amount of DVB. However, the most significant increase in free carbon content is registered for SiCN samples, namely of ca. 40%. The carbon content changed from 9.9 wt.% in the pure HTT1800-derived material up to 49.3 wt.% for the SiCN ceramic obtained with the highest amount of DVB addition. Accordingly, Li-ion storage and therefore charge storage capacity are simultaneously increased, for the first cycle from 136 to 574 mAh g −1 , while columbic efficiency is raised by 10% up to 60.4%

  16. CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation

    International Nuclear Information System (INIS)

    Lim, C. W.; Greene, J. E.; Petrov, I.

    2006-01-01

    CoSi 2 layers, CoSi 2 (parallel sign)(001) Si and [100] CoSi 2 (parallel sign)[100] Si , contain fourfold symmetric (111) twinned domains oriented such that (221) CoSi 2 (parallel sign)(001) Si and CoSi 2 (parallel sign)[110] Si . We demonstrate that high-flux low-energy (E Ar + =9.6 eV) Ar + ion irradiation during deposition dramatically increases the area fraction f u of untwinned regions from 0.17 in films grown under standard magnetically balanced conditions in which the ratio J Ar + /J Co of the incident Ar + to Co fluxes is 1.4 to 0.72 with J Ar + /J Co =13.3. TEM analyses show that the early stages of RDE CoSi 2 (001) film growth proceed via the Volmer-Weber mode with independent nucleation of both untwinned and twinned islands. Increasing J Ar + /J Co results in larger values of both the number density and area of untwinned with respect to twinned islands. The intense Ar + ion bombardment creates additional low-energy adsorption sites that favor the nucleation of untwinned islands while collisionally enhancing Co surface mobilities which, in turn, increases the probability of itinerant Co adatoms reaching these sites

  17. BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

    Directory of Open Access Journals (Sweden)

    Hee Jae Kang2

    2011-11-01

    Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

  18. X-ray grazing incidence study of inhomogeneous strain relaxation in Si/SiGe wires

    International Nuclear Information System (INIS)

    Hesse, A.; Zhuang, Y.; Holy, V.; Stangl, J.; Zerlauth, S.; Schaeffler, F.; Bauer, G.; Darowski, N.; Pietsch, U.

    2003-01-01

    The elastic strain relaxation in a series of dry-etched periodic multilayer Si/SiGe wire samples with different etching depths was investigated systematically by means of grazing incidence diffraction (GID). The samples were patterned by holographic lithography and reactive ion etching from a Si/SiGe superlattice grown by molecular beam epitaxy. Scanning electron microscopy and atomic force microscopy were employed to obtain information on the shape of the wires. The inhomogeneous strain distribution in the etched wires and in the non-etched part of the multilayers was derived by means of finite element calculations which were used as an input for simulations of the scattered X-ray intensities in depth dependent GID. The theoretical calculations for the scattered intensities are based on distorted-wave Born approximation. The unperturbed scattering potential was chosen with a reduced optical density corresponding to the ratio of wire width and wire period, in order to reflect the main interaction between the incident X-rays and the patterned samples. The calculations are in good agreement with the experimental data demonstrating the variation of strain relaxation with depth

  19. Magneto-transport phenomena in metal/SiO2/n(p)-Si hybrid structures

    Science.gov (United States)

    Volkov, N. V.; Tarasov, A. S.; Rautskii, M. V.; Lukyanenko, A. V.; Bondarev, I. A.; Varnakov, S. N.; Ovchinnikov, S. G.

    2018-04-01

    Present review touches upon a subject of magnetotransport phenomena in hybrid structures which consist of ferromagnetic or nonmagnetic metal layer, layer of silicon oxide and silicon substrate with n- or p-type conductivity. Main attention will be paid to a number gigantic magnetotransport effects discovered in the devices fabricated on the base of the M/SiO2/n(p)-Si (M is ferromagnetic or paramagnetic metal) hybrid structures. These effects include bias induced dc magnetoresistance, gigantic magnetoimpedance, dc magnetoresistance induced by an optical irradiation and lateral magneto-photo-voltaic effect. The magnetoresistance ratio in ac and dc modes for some of our devices can exceed 106% in a magnetic field below 1 T. For lateral magneto-photo-voltaic effect, the relative change of photo-voltage in magnetic field can reach 103% at low temperature. Two types of mechanisms are responsible for sensitivity of the transport properties of the silicon based hybrid structures to magnetic field. One is related to transformation of the energy structure of the (donor) acceptor states including states near SiO2/n(p)-Si interface in magnetic field. Other mechanism is caused by the Lorentz force action. The features in behaviour of magnetotransport effects in concrete device depend on composition of the used structure, device topology and experimental conditions (bias voltage, optical radiation and others). Obtained results can be base for design of some electronic devices driven by a magnetic field. They can also provide an enhancement of the functionality for existing sensors.

  20. SiC/SiC Cladding Materials Properties Handbook

    Energy Technology Data Exchange (ETDEWEB)

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  1. Oscillations in the fusion of the Si + Si systems

    International Nuclear Information System (INIS)

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  2. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  3. Eutectics Me5Si3-MeSi2 in a triple system Mo-W-Si

    International Nuclear Information System (INIS)

    Gnesin, B.A.; Gurjiyants, P.A.; Borisenko, E.B.

    2001-01-01

    Refractory metals silicides high-melting point eutectics are of great interest for different high temperature applications: production of composite materials with silicon carbide skeleton, antioxidant protective coatings on carbon materials, brazing of carbon, silicon carbide and refractory metals alloys materials. Phase diagrams Mo-Si and W-Si are compared: diagrams are similar but not in all significant details. Number of possible crystal structures for molybdenum silicides is at least twice more, than for tungsten and this difference is manifested distinctly for composite samples with different W-Mo ratio air high-temperature tests. In tests of new silicon carbide-refractory metal silicides composites materials (REFSIC) with 10-20 seconds heating time up to 1700 o C and 20-40 seconds time of cooling silicides with molybdenum prevalence were not so steady as tungsten based silicides. Experimental data concerning eutectic temperature dependence on W-Mo ratio, X-ray diffraction data, scanning electron and optical microscopy structure investigations results and some properties are discussed. (author)

  4. Modification of Light Emission in Si-Rich Silicon Nitride Films Versus Stoichiometry and Excitation Light Energy

    Science.gov (United States)

    Torchynska, T.; Khomenkova, L.; Slaoui, A.

    2018-04-01

    Si-rich SiN x films with different stoichiometry were grown on Si substrate by plasma-enhanced chemical vapor deposition. The Si content was varied by changing the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Conventional furnace annealing at 1100°C for 30 min was applied to produce the Si quantum dots (QDs) in the SiN x films. Spectroscopic ellipsometry was used to determine the refractive index of the SiN x films that allowed estimating the film's stoichiometry. Fourier transform infrared spectroscopy has been also used to confirm the stoichiometry and microstructure. Photoluminescence (PL) spectra of Si-rich SiN x films are complex. A non-monotonous variation of the different PL peaks versus Si excess contents testifies to the competition of different radiative channels. The analysis of PL spectra, measured at the different excitation light energies and variable temperatures, has revealed that the PL bands with the peaks within the range 2.1-3.0 eV are related to the carrier recombination via radiative native defects in the SiN x host. Simultaneously, the PL bands with the peaks at 1.5-2.0 eV are caused by the exciton recombination in the Si QDs of different sizes. The way to control the SiN x emission is discussed.

  5. Tailoring of SiC nanoprecipitates formed in Si

    Energy Technology Data Exchange (ETDEWEB)

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  6. Melting relations in the MgO-MgSiO3 system up to 70 GPa

    Science.gov (United States)

    Ohnishi, Satoka; Kuwayama, Yasuhiro; Inoue, Toru

    2017-06-01

    Melting experiments in a binary system MgO-MgSiO3 were performed up to 70 GPa using a CO2 laser heated diamond anvil cell. The quenched samples were polished and analyzed by a dualbeam focused ion beam (FIB) and a field emission scanning electron microscope (FE-SEM), respectively. The liquidus phase and the eutectic composition were determined on the basis of textual and chemical analyses of sample cross sections. Our experimental results show that the eutectic composition is the Si/Mg molar ratio of 0.76 at 35 GPa and it decreases with increasing pressure. Above 45 GPa, it becomes relatively constant at about 0.64-0.65 Si/Mg molar ratio. Using our experimental data collected at a wide pressure range up to 70 GPa together with previous experimental data, we have constructed a thermodynamic model of the eutectic composition of the MgO-MgSiO3 system. The eutectic composition extrapolated to the pressure and temperature conditions at the base of the mantle is about 0.64 Si/Mg molar ratio. The modeled eutectic composition is quite consistent with a previous prediction from ab initio calculations (de Koker et al. in Earth Planet Sci Lett 361:58-63, 2013), suggesting that the simple assumption of a non-ideal regular solution model can well describe the melting relation of the MgO-MgSiO3 system at high pressure. Our results show that the liquidus phase changes from MgO-periclase to MgSiO3-bridgmanite at 35 GPa for the simplified pyrolite composition ( 0.7 Si/Mg molar ratio), while MgSiO3-bridgmanite is the liquidus phase at the entire lower mantle conditions for the chondritic composition ( 0.84 Si/Mg molar ratio).

  7. On the Mass Fractal Character of Si-Based Structural Networks in Amorphous Polymer Derived Ceramics

    Directory of Open Access Journals (Sweden)

    Sabyasachi Sen

    2015-03-01

    Full Text Available The intermediate-range packing of SiNxC4−x (0 ≤ x ≤ 4 tetrahedra in polysilycarbodiimide and polysilazane-derived amorphous SiCN ceramics is investigated using 29Si spin-lattice relaxation nuclear magnetic resonance (SLR NMR spectroscopy. The SiCN network in the polysilylcarbodiimide-derived ceramic consists predominantly of SiN4 tetrahedra that are characterized by a 3-dimensional spatial distribution signifying compact packing of such units to form amorphous Si3N4 clusters. On the other hand, the SiCN network of the polysilazane-derived ceramic is characterized by mixed bonded SiNxC4−x tetrahedra that are inefficiently packed with a mass fractal dimension of Df ~2.5 that is significantly lower than the embedding Euclidean dimension (D = 3. This result unequivocally confirms the hypothesis that the presence of dissimilar atoms, namely, 4-coordinated C and 3-coordinated N, in the nearest neighbor environment of Si along with some exclusion in connectivity between SiCxN4−x tetrahedra with widely different N:C ratios and the absence of bonding between C and N result in steric hindrance to an efficient packing of these structural units. It is noted that similar inefficiencies in packing are observed in polymer-derived amorphous SiOC ceramics as well as in proteins and binary hard sphere systems.

  8. Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

    Science.gov (United States)

    Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

    2017-09-01

    Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

  9. SI units in radiation protection

    International Nuclear Information System (INIS)

    Jain, V.K.; Soman, S.D.

    1978-01-01

    International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

  10. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Energy Technology Data Exchange (ETDEWEB)

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  11. Anisotropy in elastic properties of TiSi2 (C49, C40 and C54), TiSi and Ti5Si3: an ab-initio density functional study

    International Nuclear Information System (INIS)

    Niranjan, Manish K

    2015-01-01

    We present a comparative study of the anisotropy in the elastic properties of the C49, C54 and C40 phases of TiSi 2 , as well as orthorhombic TiSi and hexagonal Ti 5 Si 3 . The elastic constants, elastic moduli, Debye temperature and sound velocities are computed within the framework of density functional theory. The computed values of the elastic constants and moduli are found to be in excellent agreement with available experimental values. The average elastic moduli, such as Young’s modulus, shear modulus, bulk modulus and Poisson’s ratio, of polycrystalline aggregates are computed using the computed elastic constants of single crystals. The anisotropy in elastic properties is analyzed using estimates of shear anisotropic factors, bulk modulus anisotropic factors and variations in Young’s and bulk moduli in different crystallographic directions. Among the Ti–Si phases, the computed directional Young’s modulus profiles of C49 TiSi 2 and C40 TiSi 2 are found to be quite similar to those of bulk Si and Ti, respectively. In addition to the elastic properties, the electronic structure of five Ti–Si phases is studied. The density of states and planar charge density profiles reveal mixed covalent–metallic bonding in all Ti–Si phases. (paper)

  12. Large Aspect Ratio Tokamak Study

    International Nuclear Information System (INIS)

    Reid, R.L.; Holmes, J.A.; Houlberg, W.A.; Peng, Y.K.M.; Strickler, D.J.; Brown, T.G.; Wiseman, G.W.

    1980-06-01

    The Large Aspect Ratio Tokamak Study (LARTS) at Oak Ridge National Laboratory (ORNL) investigated the potential for producing a viable longburn tokamak reactor by enhancing the volt-second capability of the ohmic heating transformer through the use of high aspect ratio designs. The plasma physics, engineering, and economic implications of high aspect ratio tokamaks were assessed in the context of extended burn operation. Using a one-dimensional transport code plasma startup and burn parameters were addressed. The pulsed electrical power requirements for the poloidal field system, which have a major impact on reactor economics, were minimized by optimizing the startup and shutdown portions of the tokamak cycle. A representative large aspect ratio tokamak with an aspect ratio of 8 was found to achieve a burn time of 3.5 h at capital cost only approx. 25% greater than that of a moderate aspect ratio design tokamak

  13. Overview of the HIT-SI3 spheromak experiment

    Science.gov (United States)

    Hossack, A. C.; Jarboe, T. R.; Chandra, R. N.; Morgan, K. D.; Sutherland, D. A.; Everson, C. J.; Penna, J. M.; Nelson, B. A.

    2017-10-01

    The HIT-SI and HIT-SI3 spheromak experiments (a = 23 cm) study efficient, steady-state current drive for magnetic confinement plasmas using a novel method which is ideal for low aspect ratio, toroidal geometries. Sustained spheromaks show coherent, imposed plasma motion and low plasma-generated mode activity, indicating stability. Analysis of surface magnetic fields in HIT-SI indicates large n = 0 and 1 mode amplitudes and little energy in higher modes. Within measurement uncertainties all the n = 1 energy is imposed by the injectors, rather than being plasma-generated. The fluctuating field imposed by the injectors is sufficient to sustain the toroidal current through dynamo action whereas the plasma-generated field is not (Hossack et al., Phys. Plasmas, 2017). Ion Doppler spectroscopy shows coherent, imposed plasma motion inside r 10 cm in HIT-SI and a smaller volume of coherent motion in HIT-SI3. Coherent motion indicates the spheromak is stable and a lack of plasma-generated n = 1 energy indicates the maximum q is maintained below 1 for stability during sustainment. In HIT-SI3, the imposed mode structure is varied to test the plasma response (Hossack et al., Nucl. Fusion, 2017). Imposing n = 2, n = 3, or large, rotating n = 1 perturbations is correlated with transient plasma-generated activity. Work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences, under Award Number DE-FG02-96ER54361.

  14. Sex Ratio Elasticity Influences the Selection of Sex Ratio Strategy

    Science.gov (United States)

    Wang, Yaqiang; Wang, Ruiwu; Li, Yaotang; (Sam) Ma, Zhanshan

    2016-12-01

    There are three sex ratio strategies (SRS) in nature—male-biased sex ratio, female-biased sex ratio and, equal sex ratio. It was R. A. Fisher who first explained why most species in nature display a sex ratio of ½. Consequent SRS theories such as Hamilton’s local mate competition (LMC) and Clark’s local resource competition (LRC) separately explained the observed deviations from the seemingly universal 1:1 ratio. However, to the best of our knowledge, there is not yet a unified theory that accounts for the mechanisms of the three SRS. Here, we introduce the price elasticity theory in economics to define sex ratio elasticity (SRE), and present an analytical model that derives three SRSs based on the following assumption: simultaneously existing competitions for both resources A and resources B influence the level of SRE in both sexes differently. Consequently, it is the difference (between two sexes) in the level of their sex ratio elasticity that leads to three different SRS. Our analytical results demonstrate that the elasticity-based model not only reveals a highly plausible mechanism that explains the evolution of SRS in nature, but also offers a novel framework for unifying two major classical theories (i.e., LMC & LRC) in the field of SRS research.

  15. Influence of Si and Ge on the magnetic phase transition and magnetocaloric properties of MnFe(P, Si, Ge)

    International Nuclear Information System (INIS)

    Cam Thanh, D.T.; Brueck, E.; Tegus, O.; Klaasse, J.C.P.; Buschow, K.H.J.

    2007-01-01

    Recently, we found a large magnetocaloric effect (MCE) and favourable magnetic properties in low cost and nontoxic MnFe(P, Si, Ge) compounds [D.T. Cam Thanh, E. Brueck, O. Tegus, J.C.P. Klaasse, T.J. Gortenmulder, K.H.J. Buschow, J. Appl. Phys. 99 (2006) 08Q107]. These compounds are promising for magnetic refrigeration applications. One of the interesting points in these compounds is a nonlinear dependence of the Curie temperature (T C ) on Si concentration. This dependence is associated with the change in the lattice parameters a and c, and their ratio c/a. Compounds with larger a parameter and smaller c/a ratio have higher T C . It is clear that Si and Ge atoms play an important role in the magnetic and magnetocaloric properties in the MnFe(P, Si, Ge) compounds. In this paper, we study the effect of Si and Ge on the magnetic phase transition in these materials. Our study shows that the temperature of the phase transition, from paramagnetic to ferromagnetic, can be tuned in the room temperature range without losing giant magnetocaloric properties

  16. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  17. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  18. Structural and mechanical properties of ZrSiN thin films prepared by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Freitas, F.G.R.; Conceicao, A.G.S.; Vitoria, E.R.; Carvalho, R.G.; Tentardini, E.K.; Hübler, R.; Soares, G.

    2014-01-01

    Zirconium silicon nitride (ZrSiN) thin films were deposited by reactive magnetron sputtering in order to verify the silicon influence on coating morphology and mechanical properties. The Si/(Zr+Si) ratio was adjusted between 0 to 14.5% just modifying the power applied on the silicon target. Only peaks associated to ZrN crystalline structure were observed in XRD analysis, since Si_3N_4 phase was amorphous. All samples have (111) preferred orientation, but there is a peak intensity reduction and a broadening increase for the sample with the highest Si/(Zr+Si) ratio (14.5%), demonstrating a considerable loss of crystallinity or grain size reduction (about 8 nm calculated by Scherrer). It was also observed that the texture coefficient for (200) increases with silicon addition. Chemical composition and thickness of the coatings were determined by RBS analysis. No significant changes in nano hardness with increasing Si content were found. The thin film morphology observed by SEM presents columnar and non columnar characteristics. The set of results suggests that Si addition is restricting the columnar growth of ZrN thin films. This conclusion is justified by the fact that Si contributes to increase the ZrN grains nucleation during the sputtering process. (author)

  19. Effects of Si content on microstructure and mechanical properties of TiAlN/Si3N4-Cu nanocomposite coatings

    Science.gov (United States)

    Feng, Changjie; Hu, Shuilian; Jiang, Yuanfei; Wu, Namei; Li, Mingsheng; Xin, Li; Zhu, Shenglong; Wang, Fuhui

    2014-11-01

    TiAlN/Si3N4-Cu nanocomposite coatings of various Si content (0-5.09 at.%) were deposited on AISI-304 stainless steel by DC reactive magnetron sputtering technique. The chemical composition, microstructure, mechanical and tribological properties of these coatings were systematically investigated by means of X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), nanoindentation tester, a home-made indentation system, a scratch tester and a wear tester. Results indicated that with increasing Si content in these coatings, a reduction of grain size and surface roughness, a transformation of the (1 1 1) preferred orientation was detected by XRD and FESEM. Furthermore the hardness of these coatings increase from 9.672 GPa to 18.628 GPa, and the elastic modulus reveal the rising trend that increase from 224.654 GPa to 251.933 GPa. However, the elastic modulus of TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content dropped rapidly and changed to about 180.775 GPa. The H3/E2 ratio is proportional to the film resistance to plastic deformation. The H3/E2 ratio of the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content possess of the maximum of 0.11 GPa, and the indentation test indicate that few and fine cracks were observed from its indentation morphologies. The growth pattern of cracks is mainly bending growing. The present results show that the best toughness is obtained for TiAlN/Si3N4-Cu nanocomposite coating containing 3.39 at.% Si content. In addition, the TiAlN/Si3N4-Cu coating containing 3.39 at.% Si content also has good adhesion property and superior wear resistance, and the wear mechanism is mainly adhesion wear.

  20. Mechanics of patterned helical Si springs on Si substrate.

    Science.gov (United States)

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  1. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  2. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

    Science.gov (United States)

    Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

    2017-10-01

    Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

    International Nuclear Information System (INIS)

    Ishikawa, M.; Muramoto, I.; Machida, H.; Imai, S.; Ogura, A.; Ohshita, Y.

    2007-01-01

    NiSi x films were deposited using chemical vapor deposition (CVD) with a Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system. The step coverage quality of deposited NiSi x was investigated using a horizontal type of hot-wall low pressure CVD reactor, which maintained a constant temperature throughout the deposition area. The step coverage quality improved as a function of the position of the gas flow direction, where PF 3 gas from decomposition of Ni(PF 3 ) 4 increased. By injecting PF 3 gas into the Ni(PF 3 ) 4 and Si 3 H 8 /H 2 gas system, the step coverage quality markedly improved. This improvement in step coverage quality naturally occurred when PF 3 gas was present, indicating a strong relationship. The Si/Ni deposit ratio at 250 deg. C is larger than at 180 deg. C. It caused a decreasing relative deposition rate of Ni to Si. PF 3 molecules appear to be adsorbed on the surface of the deposited film and interfere with faster deposition of active Ni deposition species

  4. Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

    International Nuclear Information System (INIS)

    Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

    2012-01-01

    Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

  5. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Science.gov (United States)

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  6. Formation of thin DLC films on SiO{sub 2}/Si substrate using FCVAD technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D. [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand); Aramwit, C.; Tippawan, U. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Yu, L.D. [Plasma and Beam Physics Research Facility (PBP), Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Centre of Excellence in Physics, Commission on Higher Education, 328 Si Ayutthaya Road, Bangkok 10400 (Thailand)

    2013-07-15

    Diamond-like carbon (DLC) films deposited on SiO{sub 2}/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO{sub 2}/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I{sub D}/I{sub G} ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I{sub D}/I{sub G} ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp{sup 3} site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp{sup 3} fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO{sub 2} substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC

  7. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

  8. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    International Nuclear Information System (INIS)

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  9. Low dose irradiation performance of SiC interphase SiC/SiC composites

    International Nuclear Information System (INIS)

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  10. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  11. Effect of Substrate-Inoculum Ratio on the Biochemical Methane Potential of Municipal Biowastes

    OpenAIRE

    Parra-Orobio Brayan Alexis; Torres-Lozada Patricia; Marmolejo-Rebellón Luis Fernando; Cárdenas-Cleves Lina Marcela; Vásquez-Franco Carlos; Torres-López Wilmar Alexander; Ordoñez-Andrade José Abdón

    2015-01-01

    Biowastes are the predominant fraction of municipal solid waste (MSW) of developing countries. Biowastes are characterized by a high content of organic matter; characteristics which facilitates its transformation through biological processes such as anaerobic digestion (AD). Using biochemical methane potential (PBM) assays, in this study we evaluated the influence of substrate-inoculum (S/I) ratio on the AD of biowaste from MSW. The S/I ranged between 0.25 to 9 gSVsubstrate * ...

  12. Holes at High Blowing Ratios

    Directory of Open Access Journals (Sweden)

    Phillip M. Ligrani

    1996-01-01

    Full Text Available Experimental results are presented which describe the development and structure of flow downstream of a single row of holes with compound angle orientations producing film cooling at high blowing ratios. This film cooling configuration is important because similar arrangements are frequently employed on the first stage of rotating blades of operating gas turbine engines. With this configuration, holes are spaced 6d apart in the spanwise direction, with inclination angles of 24 degrees, and angles of orientation of 50.5 degrees. Blowing ratios range from 1.5 to 4.0 and the ratio of injectant to freestream density is near 1.0. Results show that spanwise averaged adiabatic effectiveness, spanwise-averaged iso-energetic Stanton number ratios, surveys of streamwise mean velocity, and surveys of injectant distributions change by important amounts as the blowing ratio increases. This is due to injectant lift-off from the test surface just downstream of the holes.

  13. Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

    International Nuclear Information System (INIS)

    Wang Hao; Yang, F.J.; Wang, H.B.; Cao, X.; Xue, S.X.; Wang, J.A.; Gao, Y.; Huang, Z.B.; Yang, C.P.; Chiah, M.F.; Cheung, W.Y.; Wong, S.P.; Li, Q.; Li, Z.Y.

    2006-01-01

    FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO 2 /Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 deg. C

  14. Replication performance of Si-N-DLC-coated Si micro-molds in micro-hot-embossing

    International Nuclear Information System (INIS)

    Saha, B; Tor, S B; Liu, E; Khun, N W; Hardt, D E; Chun, J H

    2010-01-01

    Micro-hot-embossing is an emerging technology with great potential to form micro- and nano-scale patterns into polymers with high throughput and low cost. Despite its rapid progress, there are still challenges when this technology is employed, as demolding stress is usually very high due to large friction and adhesive forces induced during the process. Surface forces are dominating parameters in micro- and nano-fabrication technologies because of a high surface-to-volume ratio of products. This work attempted to improve the surface properties of Si micro-molds by means of silicon- and nitrogen-doped diamond-like carbon (Si-N-DLC) coatings deposited by dc magnetron cosputtering on the molds. The bonding structure, surface roughness, surface energy, adhesive strength and tribological behavior of the coated samples were characterized with micro Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement, microscratch test and ball-on-disk sliding tribological test, respectively. It was observed that the doping condition had a great effect on the performance of the coatings. The Si-N-DLC coating deposited with 5 × 10 −6 m 3 min −1 N 2 had lowest surface roughness and energy of about 1.2 nm and 38.2 × 10 −3 N m −1 , respectively, while the coatings deposited with 20 × 10 −6 and 25 × 10 −6 m 3 min −1 N 2 showed lowest friction coefficients. The uncoated and Si-N-DLC-coated Si micro-molds were tested in a micro-hot-embossing process for a comparative study of their replication performance and lifetime. The experimental results showed that the performance of the Si micro-molds was improved by the Si-N-DLC coatings, and well-defined micro-features with a height of about 100 µm were fabricated successfully into cyclic olefin copolymer (COC) sheets using the Si-N-DLC-coated micro-molds.

  15. Grafted SiC nanocrystals

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  16. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Czech Academy of Sciences Publication Activity Database

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  17. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    International Nuclear Information System (INIS)

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  18. Deriving aerosol scattering ratio using range-resolved lidar ratio

    Indian Academy of Sciences (India)

    2014-02-13

    Feb 13, 2014 ... ratio (LDR) are used to suggest the type of aerosols. The altitude-dependent ... to the station and the experimentally measured lidar data. The 'model ... The integrated aerosol extinction profile with altitude-dependent S and k.

  19. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  20. On the Mass Fractal Character of Si-Based Structural Networks in Amorphous Polymer Derived Ceramics.

    Science.gov (United States)

    Sen, Sabyasachi; Widgeon, Scarlett

    2015-03-17

    The intermediate-range packing of SiN x C 4- x (0 ≤ x ≤ 4) tetrahedra in polysilycarbodiimide and polysilazane-derived amorphous SiCN ceramics is investigated using 29 Si spin-lattice relaxation nuclear magnetic resonance (SLR NMR) spectroscopy. The SiCN network in the polysilylcarbodiimide-derived ceramic consists predominantly of SiN₄ tetrahedra that are characterized by a 3-dimensional spatial distribution signifying compact packing of such units to form amorphous Si₃N₄ clusters. On the other hand, the SiCN network of the polysilazane-derived ceramic is characterized by mixed bonded SiN x C 4- x tetrahedra that are inefficiently packed with a mass fractal dimension of D f ~2.5 that is significantly lower than the embedding Euclidean dimension ( D = 3). This result unequivocally confirms the hypothesis that the presence of dissimilar atoms, namely, 4-coordinated C and 3-coordinated N, in the nearest neighbor environment of Si along with some exclusion in connectivity between SiC x N 4- x tetrahedra with widely different N:C ratios and the absence of bonding between C and N result in steric hindrance to an efficient packing of these structural units. It is noted that similar inefficiencies in packing are observed in polymer-derived amorphous SiOC ceramics as well as in proteins and binary hard sphere systems.

  1. Biomorphous SiC ceramics prepared from cork oak as precursor

    Science.gov (United States)

    Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

    2016-04-01

    Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:C:Si, SiC:C, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

  2. RATIO_TOOL - SOFTWARE FOR COMPUTING IMAGE RATIOS

    Science.gov (United States)

    Yates, G. L.

    1994-01-01

    Geological studies analyze spectral data in order to gain information on surface materials. RATIO_TOOL is an interactive program for viewing and analyzing large multispectral image data sets that have been created by an imaging spectrometer. While the standard approach to classification of multispectral data is to match the spectrum for each input pixel against a library of known mineral spectra, RATIO_TOOL uses ratios of spectral bands in order to spot significant areas of interest within a multispectral image. Each image band can be viewed iteratively, or a selected image band of the data set can be requested and displayed. When the image ratios are computed, the result is displayed as a gray scale image. At this point a histogram option helps in viewing the distribution of values. A thresholding option can then be used to segment the ratio image result into two to four classes. The segmented image is then color coded to indicate threshold classes and displayed alongside the gray scale image. RATIO_TOOL is written in C language for Sun series computers running SunOS 4.0 and later. It requires the XView toolkit and the OpenWindows window manager (version 2.0 or 3.0). The XView toolkit is distributed with Open Windows. A color monitor is also required. The standard distribution medium for RATIO_TOOL is a .25 inch streaming magnetic tape cartridge in UNIX tar format. An electronic copy of the documentation is included on the program media. RATIO_TOOL was developed in 1992 and is a copyrighted work with all copyright vested in NASA. Sun, SunOS, and OpenWindows are trademarks of Sun Microsystems, Inc. UNIX is a registered trademark of AT&T Bell Laboratories.

  3. Compared production behavior of borax and unborax premixed SiC reinforcement Al7Si-Mg-TiB alloys composites with semi-solid stir casting method

    Science.gov (United States)

    Haryono, M. B.; Sulardjaka, Nugroho, Sri

    2016-04-01

    The present study was aimed to investigate the effect of borax additive on physical and mechanical properties of Al7Si-Mg-TiB with the reinforcement of silicon carbide. In this case, the different weight percentage from the reinforcement of SiC (10, 15, and 20% wt), and the borax additive (ratio 1:4) were homogenously added into the matrix by employing the semi-solid stir casting method at the temperature of 590°C. Al7Si-Mg-TiB melted in an electric resistance furnace at 800°C for 25 minutes and the holding time of 5 minutes; SiC was stirred with borax inside the chamber and heated at the temperature of 250°C for 25 minutes. Then, it melted by lowing the temperature into 590°C. The SiC-borax mixture was added into the electric resistance furnace, and automatically stirred by the stirrer at a constant speed (500 rpm for 3 minutes) in the composite A17Si-Mg-TiB. It melted when heated at 750°C for 17minutes,then, casting was performed on the prepared mould. The characterizations of Al7Si-Mg-TiB-SiC/borax were porosity, hardness, and microstructure on the Al7Si-Mg-TiB-SiC/ borax. The porosity of AMC tended to increase along with the increaseof the wt% SiC (1.4%-3.6%); however, borax additive underwent a decrease in porosity (0.14%-1.3%). Further, hardness tended to improve along with the increase of wt% SiC. The unboraxmixture had 79,6 HRB up to 94 HRB. Whereas, the borax additive mixture had 105,8 HRB up to 121 HRB.

  4. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Hazra, Purnima; Singh, Satyendra Kumar [Department of Electronics and Communication Engineering, Motilal Neheru National Institute of Technology, Allahabad 211004 (India); Jit, Satyabrata, E-mail: sjit.ece@itbhu.ac.in [Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005 (India)

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the

  5. H{sub 2}-Ar dilution for improved c-Si quantum dots in P-doped SiN{sub x}:H thin film matrix

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jia [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Zhang, Weijia, E-mail: zwjghx@126.com [Center of Condensed Matter and Material Physics, School of Physics and Nuclear Energy Engineering, Beihang University, Beijing, 100191 (China); Liu, Shengzhong, E-mail: szliu@dicp.ac.cn [Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); State key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian 116023 (China)

    2017-02-28

    Highlights: • Phosphorous-doped SiN{sub x}:H thin films containing c-Si QDs were prepared by PECVD in H{sub 2}-Ar mixed dilution under low temperature. • QD density and QD size can be controlled by tuning H{sub 2}/Ar flow ratio. • The sample prepared at the H{sub 2}/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. • Detail discussion has been presented for illustrating the influence of H{sub 2}/Ar mixed dilution on the crystallization process and P-doping. - Abstract: Phosphorus-doped hydrogenated silicon nitride (SiN{sub x}:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H{sub 2}/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiN{sub x}:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H{sub 2}/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H{sub 2}/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H{sub 2}/Ar ratio to 100/100, P-doped SiN{sub x}:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H{sub 2}-Ar mixed dilution on the properties of P-doped SiN{sub x}:H thin films.

  6. High ratio recirculating gas compressor

    Science.gov (United States)

    Weinbrecht, J.F.

    1989-08-22

    A high ratio positive displacement recirculating rotary compressor is disclosed. The compressor includes an integral heat exchanger and recirculation conduits for returning cooled, high pressure discharge gas to the compressor housing to reducing heating of the compressor and enable higher pressure ratios to be sustained. The compressor features a recirculation system which results in continuous and uninterrupted flow of recirculation gas to the compressor with no direct leakage to either the discharge port or the intake port of the compressor, resulting in a capability of higher sustained pressure ratios without overheating of the compressor. 10 figs.

  7. Output factors and scatter ratios

    Energy Technology Data Exchange (ETDEWEB)

    Shrivastava, P N; Summers, R E; Samulski, T V; Baird, L C [Allegheny General Hospital, Pittsburgh, PA (USA); Ahuja, A S; Dubuque, G L; Hendee, W R; Chhabra, A S

    1979-07-01

    Reference is made to a previous publication on output factors and scatter ratios for radiotherapy units in which it was suggested that the output factor should be included in the definitions of scatter-air ratio and tissue-maximum ratio. In the present correspondence from other authors and from the authors of the previous publication, the original definitions and the proposed changes are discussed. Radiation scatter from source and collimator degradation of beam energy and calculation of dose in tissue are considered in relation to the objective of accurate dosimetry.

  8. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  9. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.; Quevedo-Ló pez, Manuel Angel Quevedo; Alshareef, Husam N.; Gnade, Bruce E.; Ramí rez-Bon, Rafael

    2010-01-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  10. Dielectric properties of PMMA-SiO2 hybrid films

    KAUST Repository

    Morales-Acosta, M. D.

    2010-03-01

    Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

  11. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Science.gov (United States)

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  12. Large aspect ratio tokamak study

    International Nuclear Information System (INIS)

    Reid, R.L.; Holmes, J.A.; Houlberg, W.A.; Peng, Y.K.M.; Strickler, D.J.; Brown, T.G.; Sardella, C.; Wiseman, G.W.

    1979-01-01

    The Large Aspect Ratio Tokamak Study (LARTS) investigated the potential for producing a viable long burn tokamak reactor through enhanced volt-second capability of the ohmic heating transformer by employing high aspect ratio designs. The plasma physics, engineering, and economic implications of high aspect ratio tokamaks were accessed in the context of extended burn operation. Plasma startup and burn parameters were addressed using a one-dimensional transport code. The pulsed electrical power requirements for the poloidal field system, which have a major impact on reactor economics, were minimized by optimizing the field in the ohmic heating coil and the wave shape of the ohmic heating discharge. A high aspect ratio reference reactor was chosen and configured

  13. Effects of substrate to inoculum ratio on the biochemical methane potential of piggery slaughterhouse wastes.

    Science.gov (United States)

    Yoon, Young-Man; Kim, Seung-Hwan; Shin, Kook-Sik; Kim, Chang-Hyun

    2014-04-01

    The aim of this study was to assess the effect of substrate to inoculum ratio (S/I ratio) on the biochemical methane potential (BMP) and anaerobic biodegradability (Ddeg) of different piggery slaughterhouse wastes, such as piggery blood, intestine residue, and digestive tract content. These wastes were sampled from a piggery slaughterhouse located in Kimje, South Korea. Cumulative methane production curves for the wastes were obtained from the anaerobic batch fermentation having different S/I ratios of 0.1, 0.5, 1.0, and 1.5. BMP and anaerobic biodegradabilities (Ddeg) of the wastes were calculated from cumulative methane production data for the tested conditions. At the lowest S/I ration of 0.1, BMPs of piggery blood, intestine residue, and digestive tract content were determined to be 0.799, 0.848, and 1.076 Nm(3) kg(-1)-VSadded, respectively, which were above the theoretical methane potentials of 0.539, 0.644, and 0.517 Nm(3) kg(-1)-VSadded for blood, intestine residue, and digestive tract content, respectively. However, BMPs obtained from the higher S/I ratios of 0.5, 1.0, and 1.5 were within the theoretical range for all three types of waste and were not significantly different for the different S/I ratios tested. Anaerobic biodegradabilities calculated from BMP data showed a similar tendency. These results imply that, for BMP assay in an anaerobic reactor, the S/I ratio of anaerobic reactor should be above 0.1 and the inoculum should be sufficiently stabilized to avoid further degradation during the assay.

  14. Effects of Substrate to Inoculum Ratio on the Biochemical Methane Potential of Piggery Slaughterhouse Wastes

    Directory of Open Access Journals (Sweden)

    Young-Man Yoon

    2014-04-01

    Full Text Available The aim of this study was to assess the effect of substrate to inoculum ratio (S/I ratio on the biochemical methane potential (BMP and anaerobic biodegradability (Ddeg of different piggery slaughterhouse wastes, such as piggery blood, intestine residue, and digestive tract content. These wastes were sampled from a piggery slaughterhouse located in Kimje, South Korea. Cumulative methane production curves for the wastes were obtained from the anaerobic batch fermentation having different S/I ratios of 0.1, 0.5, 1.0, and 1.5. BMP and anaerobic biodegradabilities (Ddeg of the wastes were calculated from cumulative methane production data for the tested conditions. At the lowest S/I ration of 0.1, BMPs of piggery blood, intestine residue, and digestive tract content were determined to be 0.799, 0.848, and 1.076 Nm3 kg−1-VSadded, respectively, which were above the theoretical methane potentials of 0.539, 0.644, and 0.517 Nm3 kg−1-VSadded for blood, intestine residue, and digestive tract content, respectively. However, BMPs obtained from the higher S/I ratios of 0.5, 1.0, and 1.5 were within the theoretical range for all three types of waste and were not significantly different for the different S/I ratios tested. Anaerobic biodegradabilities calculated from BMP data showed a similar tendency. These results imply that, for BMP assay in an anaerobic reactor, the S/I ratio of anaerobic reactor should be above 0.1 and the inoculum should be sufficiently stabilized to avoid further degradation during the assay.

  15. Arcjet nozzle area ratio effects

    Science.gov (United States)

    Curran, Francis M.; Sarmiento, Charles J.; Birkner, Bjorn W.; Kwasny, James

    1990-01-01

    An experimental investigation was conducted to determine the effect of nozzle area ratio on the operating characteristics and performance of a low power dc arcjet thruster. Conical thoriated tungsten nozzle inserts were tested in a modular laboratory arcjet thruster run on hydrogen/nitrogen mixtures simulating the decomposition products of hydrazine. The converging and diverging sides of the inserts had half angles of 30 and 20 degrees, respectively, similar to a flight type unit currently under development. The length of the diverging side was varied to change the area ratio. The nozzle inserts were run over a wide range of specific power. Current, voltage, mass flow rate, and thrust were monitored to provide accurate comparisons between tests. While small differences in performance were observed between the two nozzle inserts, it was determined that for each nozzle insert, arcjet performance improved with increasing nozzle area ratio to the highest area ratio tested and that the losses become very pronounced for area ratios below 50. These trends are somewhat different than those obtained in previous experimental and analytical studies of low Re number nozzles. It appears that arcjet performance can be enhanced via area ratio optimization.

  16. Arcjet Nozzle Area Ratio Effects

    Science.gov (United States)

    Curran, Francis M.; Sarmiento, Charles J.; Birkner, Bjorn W.; Kwasny, James

    1990-01-01

    An experimental investigation was conducted to determine the effect of nozzle area ratio on the operating characteristics and performance of a low power dc arcjet thruster. Conical thoriated tungsten nozzle inserts were tested in a modular laboratory arcjet thruster run on hydrogen/nitrogen mixtures simulating the decomposition products of hydrazine. The converging and diverging sides of the inserts had half angles of 30 and 20 degrees, respectively, similar to a flight type unit currently under development. The length of the diverging side was varied to change the area ratio. The nozzle inserts were run over a wide range of specific power. Current, voltage, mass flow rate, and thrust were monitored to provide accurate comparisons between tests. While small differences in performance were observed between the two nozzle inserts, it was determined that for each nozzle insert, arcjet performance improved with increasing nozzle area ratio to the highest area ratio tested and that the losses become very pronounced for area ratios below 50. These trends are somewhat different than those obtained in previous experimental and analytical studies of low Re number nozzles. It appears that arcjet performance can be enhanced via area ratio optimization.

  17. High-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching

    Science.gov (United States)

    Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Yun; Wong, C.-P.

    2018-05-01

    High-aspect-ratio (HAR) microstructures on silicon (Si) play key roles in photonics and electromechanical devices. However, it has been challenging to fabricate HAR microstructures with slanting profiles. Here we report successful fabrication of uniform HAR microstructures with controllable slanting angles on (1 0 0)-Si by slanted uniform metal-assisted chemical etching (SUMaCE). The trenches have width of 2 µm, aspect ratio greater than 20:1 and high geometric uniformity. The slanting angles can be adjusted between 2-70° with respect to the Si surface normal. The results support a fundamental hypothesis that under the UMaCE condition, the preferred etching direction is along the normal of the thin film catalysts, regardless of the relative orientation of the catalyst to Si substrates or the crystalline orientation of the substrates. The SUMaCE method paves the way to HAR 3D microfabrication with arbitrary slanting profiles inside Si.

  18. Dependence of Performance of Si Nanowire Solar Cells on Geometry of the Nanowires

    Directory of Open Access Journals (Sweden)

    Firoz Khan

    2014-01-01

    Full Text Available The dependence of performance of silicon nanowires (SiNWs solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3 and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3 concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μm in the wavelength range of 300–1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm2. The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μm, ~75 nm, and 90 μm−2, respectively.

  19. Dependence of performance of Si nanowire solar cells on geometry of the nanowires.

    Science.gov (United States)

    Khan, Firoz; Baek, Seong-Ho; Kim, Jae Hyun

    2014-01-01

    The dependence of performance of silicon nanowires (SiNWs) solar cells on the growth condition of the SiNWs has been described. Metal-assisted electroless etching (MAE) technique has been used to grow SiNWs array. Different concentration of aqueous solution containing AgNO3 and HF for Ag deposition is used. The diameter and density of SiNWs are found to be dependent on concentration of solution used for Ag deposition. The diameter and density of SiNWs have been used to calculate the filling ratio of the SINWs arrays. The filling ratio is increased with increase in AgNO3 concentration, whereas it is decreased with increase in HF concentration. The minimum reflectance value achieved is ~1% for SiNWs of length of ~1.2 μ m in the wavelength range of 300-1000 nm. The performance and diode parameters strongly depend on the geometry of SiNWs. The maximum short circuit current density achieved is 35.6 mA/cm(2). The conversion efficiency of solar cell is 9.73% for SiNWs with length, diameter, and wire density of ~1.2 μ m, ~75 nm, and 90 μ m(-2), respectively.

  20. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    International Nuclear Information System (INIS)

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  1. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Science.gov (United States)

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  2. Effect of TiO2 addition on reaction between SiC and Ni in SiC-Ni cermet spray coatings. Part 2. ; Development of SiC-based cermet spray coatings. SiC-Ni yosha himakuchu no SiC-Ni kaimen hanno ni oyobosu TiO2 tenka no koka. 2. ; SiC-ki sametto yosha himaku no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, T [Kumano Technical College, Mie (Japan); Oki, S; Goda, S [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology

    1992-09-30

    The depression of the reaction between SiC and Ni, by adding TiO2 powder in spraying powder which has caused uniform dispersion in spray coating and reduction of TiO2 by the reaction during spraying, was studied. The mass ratio of the mixed components has been, SiC:Ni:TiO2=3:2:1. The spray coating was examined by electron prove microanalysis as well as X-ray diffractometry, centering mainly to the SiC-metal interface reaction. The formation of Ni-Si compounds have been depressed by the addition of TiO2 to spraying powder and by using plasma gas containing H2. Reason for this has been that the TiC formed in the SiC-Ni interface has depressed the reaction at the SiC-Ni interface. Further, TiO2 is reduced during spraying, and TiC is thought to be formed by the reaction between Ti and SiC or reaction between TiO2 and SiC. 8 refs., 6 figs., 1 tab.

  3. Thermal Expansion Properties of Fe-42Ni-Si Alloy Strips Fabricated by Melt Drag Casting Process

    International Nuclear Information System (INIS)

    Kim, Moo Kyum; Ahn, Yong Sik; Namkung, Jeong; Kim, Moon Chul; Kim, Yong Chan

    2007-01-01

    Thermal expansion property was investigated on Fe-42% Ni alloy strip added by alloying element of Si of 0∼1.5wt.%. The strip was fabricated by a melt drag casting process. Addition of Si enlarged the solid-liquid region and reduced the melting point which leads to the increase of the formability of a strip. The alloy containing 0.6 wt.% Si showed the lowest thermal expansion ratio in the temperature range between 20 to 350 .deg. C. The grain size was increased with reduction ratio and annealing temperature, which resulted in the decrease of the thermal expansion coefficient of strip. Because of grain refining by precipitation of Ni 3 Fe, the alloy strip containing 1.5 wt.% Si showed higher thermal expansion ratio compared with the alloy containing 0.6 wt.% Si

  4. Crystallization in Y-Si-Al-O-N glasses

    Energy Technology Data Exchange (ETDEWEB)

    Leng-Ward, G; Lewis, M H

    1985-05-01

    The development of crystallization in oxynitride glasses has been characterized using transmission electron microscopy and scanning electron microscopy, X-ray (energy-dispersive) microanalysis, and powder X-ray diffraction techniques. A series of glasses was prepared while maintaining the ratio of yttrium-to-silicon-to-aluminium, but replacing oxygen with nitrogen up to the nitrogen solubility limit. On annealing at 1250 C, the oxide glass fully crystallized into yttrium disilicate (Y2Si2O7). Al2O3 and mullite (Al6Si2O13) while, with increasing nitrogen content, the disilicate phase was progressively replaced by yttrium aluminium garnet (Y3Al5O12) and nitrogen was mainly incorporated into Si2N2O. Annealing of the nitrogen glasses at 1100 C produced partial crystallization involving an intermediate phase related to nitrogen-wollastonite. Phase separation in an as-quenched SiO2-rich Y-Si-Al-O composition glass is illustrated. 9 references.

  5. Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

    International Nuclear Information System (INIS)

    Hazra, Purnima; Singh, Satyendra Kumar; Jit, Satyabrata

    2015-01-01

    In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance ( 20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the output current rating is about 130 times larger compared to their planar

  6. Effect of Reactant Concentration on the Microstructure of SiC Nano wires Grown In Situ within SiC Fiber Preforms

    International Nuclear Information System (INIS)

    Kim, Weon Ju; Kang, Seok Min; Park, Ji Yeon; Ryu, Woo Seog

    2006-01-01

    Silicon carbide fiber-reinforced silicon carbide matrix (SiC f /SiC) composites are considered as advanced materials for control rods and other in-core components of high-temperature gas cooled reactors. Although the carbon fiber-reinforced carbon matrix (C f /C) composites are more mature and have advantages in cost, manufacturability and some thermomechanical properties, the SiC f /SiC composites have a clear advantage in irradiation stability, specifically a lower level of swelling and retention of mechanical properties. This offers a lifetime component for control rod application to HTGRs while the Cf/C composites would require 2-3 replacements over the reactor lifetime. In general, the chemical vapor infiltration (CVI) technique has been used most widely to produce SiC f /SiC composites. Although the technique produces a highly pure SiC matrix, it requires a long processing time and inevitably contains large interbundle pores. The present authors have recently developed 'whisker growing-assisted process,' in which one-dimensional SiC nano structures with high aspect ratios such as whiskers, nano wires and nano rods are introduced into the fiber preform before the matrix infiltration step. This novel method can produce SiC f /SiC composites with a lower porosity and an uniform distribution of pores when compared with the conventional CVI. This would be expected to increase mechanical and thermal properties of the SiC f /SiC composites. In order to take full advantage of the whisker growing strategy, however, a homogeneous growth of long whiskers is required. In this study, we applied the atmospheric pressure CVI process without metallic catalysts for the growth of SiC nano wires within stacked SiC fiber fabrics. We focused on the effect of the concentration of a reactant gas on the growth behavior and microstructures of the SiC nano wires and discussed a controlling condition for the homogenous growth of long SiC nano wires

  7. SI units in engineering and technology

    CERN Document Server

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  8. Au L-shell ionization by Si and S ions

    International Nuclear Information System (INIS)

    Berinde, A.; Ciortea, C.; Enulescu, A.; Fluerasu, D.; Piticu, I.; Zoran, V.; Trautmann, D.

    1984-01-01

    We present the following experimental results on Au L-shell ionization: (1) in the bombarding energy range 0.25-2.5 MeV/u, absolute X-ray yields and the L 3 -vacancy integral alignment for Si, and cross section ratios for Si and S as projectiles; (2) at 32 MeV sulphur energy, subshell ionization probability ratios and the components A 20 (b) and A 22 (b) of the statistical tensor describing the L 3 -vacancy for impact parameters b=20-450 fm. A comparison of the data to SCA calcualtions reveals, except perhaps for the differential alignment, important discrepancies relative to the theoretical predictions. (orig./BRB)

  9. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    International Nuclear Information System (INIS)

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  10. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  11. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  12. Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer

    Science.gov (United States)

    Denda, Junya; Uryu, Kazuya; Watanabe, Masahiro

    2013-04-01

    A novel scheme of resistance switching random access memory (ReRAM) devices fabricated using Si/CaF2/CdF2/CaF2/Si quantum-well structures grown on metal CoSi2 layer formed on a Si substrate has been proposed, and embryonic write/erase memory operation has been demonstrated at room temperature. It has been found that the oxide-mediated epitaxy (OME) technique for forming the CoSi2 layer on Si dramatically improves the stability and reproducibility of the current-voltage (I-V) curve. This technology involves 10-nm-thick Co layer deposition on a protective oxide prepared by boiling in a peroxide-based solution followed by annealing at 550 °C for 30 min for silicidation in ultrahigh vacuum. A switching voltage of lower than 1 V, a peak current density of 32 kA/cm2, and an ON/OFF ratio of 10 have been observed for the sample with the thickness sequence of 0.9/0.9/2.5/0.9/5.0 nm for the respective layers in the Si/CaF2/CdF2/CaF2/Si structure. Results of surface morphology analysis suggest that the grain size of crystal islands with flat surfaces strongly affects the quality of device characteristics.

  13. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  14. Simulation of spheroidisation of elongated Si-particle in Al-Si alloys by the phase-field model

    International Nuclear Information System (INIS)

    Kovacevic, I.

    2008-01-01

    The application of the phase-field model for spheroidisation of undissolvable particles during high-temperature treatment of alloys is pointed out. Modelling of the spheroidisation of elongated Si-particles during annealing of Al-Si alloy is elaborated in this paper. The driving force for spheroidisation is the minimization of the total free-energy of the system or the minimization of the ratio between the interface areas and the particle volumes. The spheroidisation kinetics of elongated Si-particle for binary Al-Si system during homogenisation of aluminium alloys simulated by the phase-field model is demonstrated. The influences of the interface energy and the homogenisation temperature on the spheroidisation kinetics is presented. The lack of knowledge of the interface energy anisotropy between Si-particle and the aluminium phase is the only reason for using isotropic interface energy in simulations. The thermodynamic driving force for the phase transformation of the silicon into the aluminium phase is computed from the data obtained from the JMatPro software for aluminium alloys

  15. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  16. Silicon and Ge in the deep sea deduced from Si isotope and Ge measurements in giant glass sponges

    Science.gov (United States)

    Jochum, K. P.; Schuessler, J. A.; Haug, G. H.; Andreae, M. O.; Froelich, P. N.

    2016-12-01

    Biogenic silica, such as giant glass spicules of the deep-sea sponge Monorhaphis chuni, is an archive to monitor paleo-Si and -Ge in past seawater. Here we report on Si isotopes and Ge/Si ratios in up to 2.7 m long spicules using LA-(MC)-ICP-MS. Isotope ratios of Si are suitable proxies for Si concentrations in seawater, because Si isotope fractionation into biogenic silica is a function of seawater dissolved Si concentration. The δ30Si values for our specimens range from about - 0.5 ‰ to - 3.6 ‰ and are much lower than modern (>1000 m) seawater δ30Si of about 1.3 ‰. Interestingly, there is a systematic Si isotopic and Ge variation from the rim to the center of the cross sections, which we interpret as seawater paleo-Si and -Ge changes. The lifetime of the giant sponges appears to be between about 6 and 14 ka. These age estimates were obtained by comparing our analytical data with various paleo-markers of the glacial-interglacial termination. Thus, the entire Holocene and the end of the last glacial period are contained in the oldest giant spicules. The derived Si and Ge seawater concentrations are ca. 12 % higher and 20 % lower, respectively, during the late glacial than at present. Possible explanations for changing Si, Ge and Ge/Si during the deglaciation could be changes in riverine, glacial, and/or eolian deliveries of silica to the oceans and changes in marine sedimentary reverse weathering, which removes Ge into marine sediments during opal dissolution and diagenesis.

  17. High Performance Li4Ti5O12/Si Composite Anodes for Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Chunhui Chen

    2015-08-01

    Full Text Available Improving the energy capacity of spinel Li4Ti5O12 (LTO is very important to utilize it as a high-performance Li-ion battery (LIB electrode. In this work, LTO/Si composites with different weight ratios were prepared and tested as anodes. The anodic and cathodic peaks from both LTO and silicon were apparent in the composites, indicating that each component was active upon Li+ insertion and extraction. The composites with higher Si contents (LTO:Si = 35:35 exhibited superior specific capacity (1004 mAh·g−1 at lower current densities (0.22 A·g−1 but the capacity deteriorated at higher current densities. On the other hand, the electrodes with moderate Si contents (LTO:Si = 50:20 were able to deliver stable capacity (100 mAh·g−1 with good cycling performance, even at a very high current density of 7 A·g−1. The improvement in specific capacity and rate performance was a direct result of the synergy between LTO and Si; the former can alleviate the stresses from volumetric changes in Si upon cycling, while Si can add to the capacity of the composite. Therefore, it has been demonstrated that the addition of Si and concentration optimization is an easy yet an effective way to produce high performance LTO-based electrodes for lithium-ion batteries.

  18. Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry

    International Nuclear Information System (INIS)

    Hobbs, M J; Tan, C H; Willmott, J R

    2013-01-01

    We report the evaluation of Si avalanche photodiodes (APDs) for use in radiation thermometry as an alternative to Si photodiodes. We compared their performance when operated under phase sensitive detection (PSD), where the signal is modulated, and direct detection (DD) methods. A Si APD was compared with a Si photodiode with reference black body temperatures of 275 to 600°C, in terms of the mean output voltage and signal-to-noise ratio (SNR), measured at different APD gain values. We found that using both PSD and DD methods, the high internal gain of the Si APD achieved a lower minimum detection temperature in order to satisfy a specific minimum output voltage of the detector-preamplifier combination employed. The use of PSD over DD for the Si APD allowed for improved performance of the thermometer, with a lower minimum measurable temperature, as well as improvement in the SNR. For instance we found that at 350°C, the Si APD biased at 150 V using PSD can provide ∼ 88 times enhancement in the system SNR over that of a Si photodiode using DD. A corresponding temperature error of ±0.05°C was achieved using the APD with PSD compared to an error of ±2.75°C measured using the Si photodiode with DD.

  19. Structural changes in C–S–H gel during dissolution: Small-angle neutron scattering and Si-NMR characterization

    Energy Technology Data Exchange (ETDEWEB)

    Trapote-Barreira, Ana, E-mail: anatrapotebarreira@gmail.com [Institute of Environmental Assessment and Water Research (IDAEA), Barcelona 08034, Catalonia (Spain); Porcar, Lionel [National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States); Large Scale Structure Group, Institut Laue Langevin, Grenoble (France); Cama, Jordi; Soler, Josep M. [Institute of Environmental Assessment and Water Research (IDAEA), Barcelona 08034, Catalonia (Spain); Allen, Andrew J. [National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899 (United States)

    2015-06-15

    Flow-through experiments were conducted to study the calcium–silicate–hydrate (C–S–H) gel dissolution kinetics. During C–S–H gel dissolution the initial aqueous Ca/Si ratio decreases to reach the stoichiometric value of the Ca/Si ratio of a tobermorite-like phase (Ca/Si = 0.83). As the Ca/Si ratio decreases, the solid C–S–H dissolution rate increases from (4.5 × 10{sup −} {sup 14} to 6.7 × 10{sup −} {sup 12}) mol m{sup −} {sup 2} s{sup −} {sup 1}. The changes in the microstructure of the dissolving C–S–H gel were characterized by small-angle neutron scattering (SANS) and {sup 29}Si magic-angle-spinning nuclear magnetic resonance ({sup 29}Si-MAS NMR). The SANS data were fitted using a fractal model. The SANS specific surface area tends to increase with time and the obtained fit parameters reflect the changes in the nanostructure of the dissolving solid C–S–H within the gel. The {sup 29}Si MAS NMR analyses show that with dissolution the solid C–S–H structure tends to a more ordered tobermorite structure, in agreement with the Ca/Si ratio evolution.

  20. Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

    NARCIS (Netherlands)

    Strijkers, G.J.; Swagten, H.J.M.; Rulkens, B.; Bitter, R.H.J.N.; Jonge, de W.J.M.; Bloemen, P.J.H.; Schep, K.M.

    1998-01-01

    We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The

  1. Continuous Catalytic Hydrodeoxygenation of Guaiacol over Pt/SiO2 and Pt/H-MFI-90

    DEFF Research Database (Denmark)

    Hellinger, Melanie; Baier, Sina; Mortensen, Peter Mølgaard

    2015-01-01

    Hydrodeoxygenation of guaiacol in the presence of 1-octanol was studied in a fixed-bed reactor under mild conditions (50–250 °C) over platinum particles supported on silica (Pt/SiO2) and a zeolite with framework type MFI at a Si/Al-ratio of 45 (Pt/H-MFI-90). The deoxygenation selectivity strongly...

  2. Incentive Ratios of Fisher Markets

    DEFF Research Database (Denmark)

    Chen, Ning; Deng, Xuaitue; Zhang, Hongyang

    2012-01-01

    In a Fisher market, a market maker sells m items to n potential buyers. The buyers submit their utility functions and money endowments to the market maker, who, upon receiving submitted information, derives market equilibrium prices and allocations of its items. While agents may benefit...... by misreporting their private information, we show that the percentage of improvement by a unilateral strategic play, called incentive ratio, is rather limited—it is less than 2 for linear markets and at most $e^{1/e}\\thickapprox 1.445$ for Cobb-Douglas markets. We further prove that both ratios are tight....

  3. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  4. Doping effect in Si nanocrystals

    Science.gov (United States)

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  5. Towards H-infinity Control of an SI Engine's A/F Ratio

    DEFF Research Database (Denmark)

    Vigild, Christian; Struwe, Michael; Andersen, Karsten

    1999-01-01

    in conjunction with a PI feedback from a HEGO sensor. The effective bandwidth of this feedback loop is quite small, generally around 2 Hz. This is altogether too small for accurate AFR control.This paper presents a new lambda control methodology (H-infinity) which has a somewhat larger bandwidth and can...

  6. A New Family of Nonlinear Observers for SI Engine Air/Fuel Ratio Control

    DEFF Research Database (Denmark)

    Jensen, P. B.; Olsen, M. B.; Poulsen, J.

    1997-01-01

    The paper treats a newly developed set of nonlinear observers for advanced spark ignition engine control.......The paper treats a newly developed set of nonlinear observers for advanced spark ignition engine control....

  7. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Science.gov (United States)

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  8. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Science.gov (United States)

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  10. Ratio Bias and Policy Preferences

    DEFF Research Database (Denmark)

    Pedersen, Rasmus Tue

    2016-01-01

    Numbers permeate modern political communication. While current scholarship on framing effects has focused on the persuasive effects of words and arguments, this article shows that framing of numbers can also substantially affect policy preferences. Such effects are caused by ratio bias, which...

  11. Thermal shock properties of 2D-SiCf/SiC composites

    International Nuclear Information System (INIS)

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  12. Global Carbon Reservoir Oxidative Ratios

    Science.gov (United States)

    Masiello, C. A.; Gallagher, M. E.; Hockaday, W. C.

    2010-12-01

    Photosynthesis and respiration move carbon and oxygen between the atmosphere and the biosphere at a ratio that is characteristic of the biogeochemical processes involved. This ratio is called the oxidative ratio (OR) of photosynthesis and respiration, and is defined as the ratio of moles of O2 per moles of CO2. This O2/CO2 ratio is a characteristic of biosphere-atmosphere gas fluxes, much like the 13C signature of CO2 transferred between the biosphere and the atmosphere has a characteristic signature. OR values vary on a scale of 0 (CO2) to 2 (CH4), with most ecosystem values clustered between 0.9 and 1.2. Just as 13C can be measured for both carbon fluxes and carbon pools, OR can also be measured for fluxes and pools and can provide information about the processes involved in carbon and oxygen cycling. OR values also provide information about reservoir organic geochemistry because pool OR values are proportional to the oxidation state of carbon (Cox) in the reservoir. OR may prove to be a particularly valuable biogeochemical tracer because of its ability to couple information about ecosystem gas fluxes with ecosystem organic geochemistry. We have developed 3 methods to measure the OR of ecosystem carbon reservoirs and intercalibrated them to assure that they yield accurate, intercomparable data. Using these tools we have built a large enough database of biomass and soil OR values that it is now possible to consider the implications of global patterns in ecosystem OR values. Here we present a map of the natural range in ecosystem OR values and begin to consider its implications. One striking pattern is an apparent offset between soil and biospheric OR values: soil OR values are frequently higher than that of their source biomass. We discuss this trend in the context of soil organic geochemistry and gas fluxes.

  13. Coordination number constraint models for hydrogenated amorphous Si deposited by catalytic chemical vapour deposition

    Science.gov (United States)

    Kawahara, Toshio; Tabuchi, Norikazu; Arai, Takashi; Sato, Yoshikazu; Morimoto, Jun; Matsumura, Hideki

    2005-02-01

    We measured structure factors of hydrogenated amorphous Si by x-ray diffraction and analysed the obtained structures using a reverse Monte Carlo (RMC) technique. A small shoulder in the measured structure factor S(Q) was observed on the larger Q side of the first peak. The RMC results with an unconstrained model did not clearly show the small shoulder. Adding constraints for coordination numbers 2 and 3, the small shoulder was reproduced and the agreement with the experimental data became better. The ratio of the constrained coordination numbers was consistent with the ratio of Si-H and Si-H2 bonds which was estimated by the Fourier transformed infrared spectra of the same sample. This shoulder and the oscillation of the corresponding pair distribution function g(r) at large r seem to be related to the low randomness of cat-CVD deposited a-Si:H.

  14. Coordination number constraint models for hydrogenated amorphous Si deposited by catalytic chemical vapour deposition

    International Nuclear Information System (INIS)

    Kawahara, Toshio; Tabuchi, Norikazu; Arai, Takashi; Sato, Yoshikazu; Morimoto, Jun; Matsumura, Hideki

    2005-01-01

    We measured structure factors of hydrogenated amorphous Si by x-ray diffraction and analysed the obtained structures using a reverse Monte Carlo (RMC) technique. A small shoulder in the measured structure factor S(Q) was observed on the larger Q side of the first peak. The RMC results with an unconstrained model did not clearly show the small shoulder. Adding constraints for coordination numbers 2 and 3, the small shoulder was reproduced and the agreement with the experimental data became better. The ratio of the constrained coordination numbers was consistent with the ratio of Si-H and Si-H 2 bonds which was estimated by the Fourier transformed infrared spectra of the same sample. This shoulder and the oscillation of the corresponding pair distribution function g(r) at large r seem to be related to the low randomness of cat-CVD deposited a-Si:H

  15. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    International Nuclear Information System (INIS)

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  16. Preparation of SiC thin films by ion beam technology and PECVD

    International Nuclear Information System (INIS)

    Chen Changqing; Ren Congxin; Yang Lixin; Yan Jinlong; Zheng Zhihong; Zhou Zuyao; Chen Ping; Liu Xianghuai; Chen Xueliang

    1998-01-01

    The formation of β-SiC buried layers in p-type Si by ion beam methods is reported and a comparison of the results obtained under different experimental conditions is made. The preparation of amorphous SiC thin films by IBED is presented and the enhanced deposition of Xe + is found superior to that of Ar + . The work of synthesizing hydrogenated amorphous SiC films by RIBS and RIBAD is described with a discussion on the dependence of some physical parameters on the partial pressure ratio pCH 4 /pAr. Finally given is a brief introduction to a high quality α-SiC:H film which is prepared by PECVD and can exhibit green luminescence at room temperature

  17. Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

    Science.gov (United States)

    Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

    2014-09-10

    A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

  18. Etch pit investigation of free electron concentration controlled 4H-SiC

    Science.gov (United States)

    Kim, Hong-Yeol; Shin, Yun Ji; Kim, Jung Gon; Harima, Hiroshi; Kim, Jihyun; Bahng, Wook

    2013-04-01

    Etch pits were investigated using the molten KOH selective etching method to examine dependence of etch pit shape and size on free electron concentration. The free electron concentrations of highly doped 4H-silicon carbide (SiC) were controlled by proton irradiation and thermal annealing, which was confirmed by a frequency shift in the LO-phonon-plasmon-coupled (LOPC) mode on micro-Raman spectroscopy. The proton irradiated sample with 5×1015 cm-2 fluence and an intrinsic semi-insulating sample showed clearly classified etch pits but different ratios of threading screw dislocation (TSD) and threading edge dislocation (TED) sizes. Easily classified TEDs and TSDs on proton irradiated 4H-SiC were restored as highly doped 4H-SiC after thermal annealing due to the recovered carrier concentrations. The etched surface of proton irradiated 4H-SiC and boron implanted SiC showed different surface conditions after activation.

  19. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Science.gov (United States)

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  20. Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yujeong; Kim, Tae Geun; Nam, Ki-Hyun; Chung, Hong-Bay; Lee, Eui Bok

    2010-01-01

    An effective resistive-switching effect has been observed in silicon nitride (Si 3 N 4 ) dielectrics in Ag/Si 3 N 4 /Al memory cells. The ratio of the low resistance to high resistance state was larger than 10 7 at ±1.2 V for a 10 nm thick Si 3 N 4 layer. This switching behavior is attributed to a change in the conductivity of the Si 3 N 4 dielectrics, depending on whether nitride-related traps are filled with electrons under positive biases or unfilled under negative biases. This assertion is experimentally confirmed from the relationship between the amount of charges trapped in the Si 3 N 4 layer and the corresponding changes in its resistance with respect to bias voltages. In addition, the formation or dissolution of the conductive path is confirmed by conductive atomic force microscopy current images

  1. Extreme low thermal conductivity in nanoscale 3D Si phononic crystal with spherical pores.

    Science.gov (United States)

    Yang, Lina; Yang, Nuo; Li, Baowen

    2014-01-01

    In this work, we propose a nanoscale three-dimensional (3D) Si phononic crystal (PnC) with spherical pores, which can reduce the thermal conductivity of bulk Si by a factor up to 10,000 times at room temperature. Thermal conductivity of Si PnCs depends on the porosity, for example, the thermal conductivity of Si PnCs with porosity 50% is 300 times smaller than that of bulk Si. The phonon participation ratio spectra demonstrate that more phonons are localized as the porosity increases. The thermal conductivity is insensitive to the temperature changes from room temperature to 1100 K. The extreme-low thermal conductivity could lead to a larger value of ZT than unity as the periodic structure affects very little the electric conductivity.

  2. 32Si dating of sediments

    International Nuclear Information System (INIS)

    Morgenstern, U.

    2004-01-01

    Brief explanation of the use of 32 Si in the dating of sediments. 32 Si , with a half-life of c.140 years, can be applied in the age range 30-1000 years. An appropriate dating tool for that time range is essential because it includes three very important epochs: the impact of human colonisation and industrialisation during the last 150 years, the Little Ice Age between about 1650 AD and 1850 AD, and the last part of the Medieval Climatic Optimum. 23 refs

  3. SI units in radiation protection

    International Nuclear Information System (INIS)

    Herrmann, D.

    1976-10-01

    In the field of radiation protection all hitherto used units for activity, activity concentrations, exposure, absorbed dose, and dose rates have to be replaced by SI units during the next years. For this purpose graphs and conversion tables are given as well as recommendations on unit combinations preferentially to be used. As to the dose equivalent, it is suggested to introduce a new special unit being 100 times greater than the rem, instead of maintaining the rem or using the gray for both absorbed dose and dose equivalent. Measures and time schedule relating to the gradual transition to SI units in measuring techniques, training, and publishing et cetera are explained. (author)

  4. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  5. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  6. Influence of H on the composition and atomic concentrations of 'N-rich' plasma deposited SiOxNyHz films

    International Nuclear Information System (INIS)

    Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bohne, W.; Roehrich, J.; Selle, B.

    2004-01-01

    The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiO x N y H z films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute concentrations of all the species present in the SiO x N y H z , including H, was measured by heavy-ion elastic recoil detection analysis (HI-ERDA). Samples were deposited from SiH 4 , O 2 , and N 2 gas mixtures, with different gas flow ratios in order to obtain compositions ranging from SiN y H z to SiO 2 . Those samples deposited at higher SiH 4 partial pressures show both Si-H and N-H bonds, while those deposited at lower SiH 4 partial pressures show N-H bonds only. The Si-H and N-H bond concentrations were found to be proportional to the N concentration. The concentration of H was evaluated from the Si-H and N-H stretching absorption bands and compared to the HI-ERDA results, finding good agreement between both measurements. The deviation from H-free stoichiometric SiO x N y composition due to the presence of N-H bonds results in an effective coordination number of N to produce Si-N bonds lower than 3. By fitting the experimental composition data to a theoretical model taking into account the influence of N-H bonds, the actual concentration of N-H bonds was obtained, making evident the presence of nonbonded H. The presence of Si-H and Si-Si bonds was found to partially compensate the effect of N-H bonds, from the point of view of the relative N and Si contents. Finally, the presence of N-H bonds results in a lower Si atom concentration with respect to the stoichiometric film, due to a replacement of Si atoms by H atoms. This decrease of the Si concentration is lower in those films containing Si-H and Si-Si bonds. A model was developed to calculate the Si, O, and N atom concentrations taking into account the influence of N-H, Si-H, and Si-Si bonds, and was found to be in perfect agreement with the experimental data

  7. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries

    Directory of Open Access Journals (Sweden)

    Keiichiro Homma

    2014-04-01

    Full Text Available Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD at a material throughput of 480 g h−1. The powders are fundamentally an aggregate of primary ~20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g−1 after 100 cycles at the same time.

  8. High throughput production of nanocomposite SiO x powders by plasma spray physical vapor deposition for negative electrode of lithium ion batteries.

    Science.gov (United States)

    Homma, Keiichiro; Kambara, Makoto; Yoshida, Toyonobu

    2014-04-01

    Nanocomposite Si/SiO x powders were produced by plasma spray physical vapor deposition (PS-PVD) at a material throughput of 480 g h -1 . The powders are fundamentally an aggregate of primary ∼20 nm particles, which are composed of a crystalline Si core and SiO x shell structure. This is made possible by complete evaporation of raw SiO powders and subsequent rapid condensation of high temperature SiO x vapors, followed by disproportionation reaction of nucleated SiO x nanoparticles. When CH 4 was additionally introduced to the PS-PVD, the volume of the core Si increases while reducing potentially the SiO x shell thickness as a result of the enhanced SiO reduction, although an unfavorable SiC phase emerges when the C/Si molar ratio is greater than 1. As a result of the increased amount of Si active material and reduced source for irreversible capacity, half-cell batteries made of PS-PVD powders with C/Si = 0.25 have exhibited improved initial efficiency and maintenance of capacity as high as 1000 mAh g -1 after 100 cycles at the same time.

  9. Wetting and interface phenomena in the B4C/(Cu-B-Si) system

    International Nuclear Information System (INIS)

    Aizenshtein, M.; Froumin, N.; Shapiro-Tsoref, E.; Dariel, M.P.; Frage, N.

    2005-01-01

    The addition of Si to a Cu-B liquid alloy improves wetting of the boron carbide substrate and allows maintaining a flat metal/ceramic interface. Improved wetting is associated with a shift of the boron content in the near surface layer of the substrate towards a higher B/C ratio. The experimental results are consistent with the thermodynamic analysis of the Cu-B-C-Si system

  10. Microstructure and high-temperature tribological properties of Si-doped hydrogenated diamond-like carbon films

    Science.gov (United States)

    Zhang, Teng Fei; Wan, Zhi Xin; Ding, Ji Cheng; Zhang, Shihong; Wang, Qi Min; Kim, Kwang Ho

    2018-03-01

    Si-doped DLC films have attracted great attention for use in tribological applications. However, their high-temperature tribological properties remain less investigated, especially in harsh oxidative working conditions. In this study, Si-doped hydrogenated DLC films with various Si content were synthesized and the effects of the addition of Si on the microstructural, mechanical and high-temperature tribological properties of the films were investigated. The results indicate that Si doping leads to an obvious increase in the sp3/sp2 ratio of DLC films, likely due to the silicon atoms preferentially substitute the sp2-hybridized carbon atoms and augment the number of sp3 sites. With Si doping, the mechanical properties, including hardness and adhesion strength, were improved, while the residual stress of the DLC films was reduced. The addition of Si leads to higher thermal and mechanical stability of DLC films because the Si atoms inhibit the graphitization of the films at an elevated temperature. Better high-temperature tribological properties of the Si-DLC films under oxidative conditions were observed, which can be attributed to the enhanced thermal stability and formation of a Si-containing lubricant layer on the surfaces of the wear tracks. The nano-wear resistance of the DLC films was also improved by Si doping.

  11. Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5.

    Science.gov (United States)

    Ahles, Christopher F; Choi, Jong Youn; Wolf, Steven; Kummel, Andrew C

    2017-06-21

    The selective etching characteristics of silicon, germanium, and Si 0.5 Ge 0.5 subjected to a downstream H 2 /CF 4 /Ar plasma have been studied using a pair of in situ quartz crystal microbalances (QCMs) and X-ray photoelectron spectroscopy (XPS). At 50 °C and 760 mTorr, Si can be etched in preference to Ge and Si 0.5 Ge 0.5 , with an essentially infinite Si/Ge etch-rate ratio (ERR), whereas for Si/Si 0.5 Ge 0.5 , the ERR is infinite at 22 °C and 760 mTorr. XPS data showed that the selectivity is due to the differential suppression of etching by a ∼2 ML thick C x H y F z layer formed by the H 2 /CF 4 /Ar plasma on Si, Ge, and Si 0.5 Ge 0.5 . The data are consistent with the less exothermic reaction of fluorine radicals with Ge or Si 0.5 Ge 0.5 being strongly suppressed by the C x H y F z layer, whereas, on Si, the C x H y F z layer is not sufficient to completely suppress etching. Replacing H 2 with D 2 in the feed gas resulted in an inverse kinetic isotope effect (IKIE) where the Si and Si 0.5 Ge 0.5 etch rates were increased by ∼30 times with retention of significant etch selectivity. The use of D 2 /CF 4 /Ar instead of H 2 /CF 4 /Ar resulted in less total carbon deposition on Si and Si 0.5 Ge 0.5 and gave less Ge enrichment of Si 0.5 Ge 0.5 . These results are consistent with the selectivity being due to the differential suppression of etching by an angstrom-scale carbon layer.

  12. GUT Scale Fermion Mass Ratios

    International Nuclear Information System (INIS)

    Spinrath, Martin

    2014-01-01

    We present a series of recent works related to group theoretical factors from GUT symmetry breaking which lead to predictions for the ratios of quark and lepton Yukawa couplings at the unification scale. New predictions for the GUT scale ratios y μ /y s , y τ /y b and y t /y b in particular are shown and compared to experimental data. For this comparison it is important to include possibly large supersymmetric threshold corrections. Due to this reason the structure of the fermion masses at the GUT scale depends on TeV scale physics and makes GUT scale physics testable at the LHC. We also discuss how this new predictions might lead to predictions for mixing angles by discussing the example of the recently measured last missing leptonic mixing angle θ 13 making this new class of GUT models also testable in neutrino experiments

  13. Ratio Bias and Policy Preferences

    DEFF Research Database (Denmark)

    Pedersen, Rasmus Tue

    2017-01-01

    Numbers permeate modern political communication. While current scholarship on framing effects has focused on the persuasive effects of words and arguments, this article shows that framing of numbers can also substantially affect policy preferences. Such effects are caused by ratio bias, which...... is a general tendency to focus on numerators and pay insufficient attention to denominators in ratios. Using a population-based survey experiment, I demonstrate how differently framed but logically equivalent representations of the exact same numerical value can have large effects on citizens’ preferences...... regarding salient political issues such as education and taxes. Furthermore, the effects of numerical framing are found across most groups of the population, largely regardless of their political predisposition and their general ability to understand and use numerical information. These findings have...

  14. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  15. Epitaxial growth of 3C-SiC by using C{sub 60} as a carbon source; Untersuchungen zum epitaktischen Wachstum von 3C-SiC bei Verwendung einer C{sub 60}-Kohlenstoffquelle

    Energy Technology Data Exchange (ETDEWEB)

    Schreiber, Sascha

    2006-01-15

    Within this work epitaxial 3C-SiC-films were grown on Si(001) substrates and on ion beam synthesized 3C-SiC(001) pseudo substrates. A rather new process was used which is based on the simultaneous deposition of C60 and Si. In order to set up the necessary experimental conditions an ultra-high vacuum chamber has been designed and built. A RHEED system was used to examine SiC film growth in-situ. Using the described technique 3C-SiC films were grown void-free on Si(001) substrates. Deposition rates of C60 and Si were chosen adequately to maintain a Si:C ratio of approximately one during the deposition process. It was shown that stoichiometric and epitaxial 3C-SiC growth with the characteristic relationship (001)[110]Si(001)[110]3C-SiC could be achieved. TEM investigations revealed that the grown 3C-SiC films consist of individual grains that extend from the Si substrate to the film surface. Two characteristic grain types could be identified. The correlation between structure and texture of void-free grown 3C-SiC films and film thickness was studied by X-ray diffraction (XRD). Pole figure measurements showed that thin films only contain first-order 3C-SiC twins. With higher film thickness also second-order twins are found which are located as twin lamellae in grain type 2. Improvement of polar texture with increasing film thickness couldn't be observed in the investigated range of up to 550 nm. On ion beam synthesized 3C-SiC pseudo substrates homoepitaxial 3C-SiC growth could be demonstrated for the first time by using a C{sub 60} carbon source. In respect to the crystalline quality of the grown films the surface quality of the used substrates was identified as a crucial factor. Furthermore a correlation between the ratio of deposition rates of C{sub 60} and Si and 3C-SiC film quality could be found. Under silicon-rich conditions, i.e. with a Si:C ratio of slightly greater one, homoepitaxial 3C-SiC layer-by-layer growth can be achieved. Films grown under these

  16. Chlorobenzene, chloroform, and carbon tetrachloride adsorption on undoped and metal-doped sol-gel substrates (SiO{sub 2}, Ag/SiO{sub 2}, Cu/SiO{sub 2} and Fe/SiO{sub 2})

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, M.A. [Postgrado de Ciencias Ambientales and Departamento de Investigacion en Zeolitas, Instituto de Ciencias, Universidad Autonoma de Puebla, Edificio 76, Complejo de Ciencias, Ciudad Universitaria, CP 72570 Puebla (Mexico)], E-mail: mighern@siu.buap.mx; Gonzalez, A.I.; Corona, L.; Hernandez, F. [Postgrado de Ciencias Ambientales and Departamento de Investigacion en Zeolitas, Instituto de Ciencias, Universidad Autonoma de Puebla, Edificio 76, Complejo de Ciencias, Ciudad Universitaria, CP 72570 Puebla (Mexico); Rojas, F.; Asomoza, M.; Solis, S. [Departamento de Quimica, Universidad Autonoma Metropolitana-Iztapalapa, P.O. Box 55-534, D.F. Mexico (Mexico); Portillo, R.; Salgado, M.A. [Facultad de Ciencias Quimicas, Universidad Autonoma de Puebla (Mexico)

    2009-02-15

    Adsorption isotherms of chlorobenzene, chloroform and carbon tetrachloride vapors on undoped SiO{sub 2}, and metal-doped Ag/SiO{sub 2}, Cu/SiO{sub 2} and Fe/SiO{sub 2} substrates were measured in the temperature range of 398-593 K. These substrates were prepared from a typical sol-gel technique in the presence of metal dopants that rendered an assortment of microporous-mesoporous solids. The relevant characteristic of these materials was the different porosities and micropore to mesopore volume ratios that were displayed; this was due to the effect that the cationic metal valence exerts on the size of the sol-gel globules that compose the porous solid. The texture of these SiO{sub 2} materials was analyzed by X-ray diffraction (XRD), FTIR, and diverse adsorption methods. The pore-size distributions of the adsorbents confirmed the existence of mesopores and supermicropores, while ultramicropores were absent. The Freundlich adsorption model approximately fitted the chlorinated compounds adsorption data on the silica substrates by reason of a heterogeneous energy distribution of adsorption sites. The intensity of the interaction between these organic vapors and the surface of the SiO{sub 2} samples was analyzed through evaluation of the isosteric heat of adsorption and standard adsorption energy; from these last results it was evident that the presence of metal species within the silica structure greatly affected the values of both the amounts adsorbed as well as of the isosteric heats of adsorption.

  17. Passivation of hexagonal SiC surfaces by hydrogen termination

    International Nuclear Information System (INIS)

    Seyller, Thomas

    2004-01-01

    Surface hydrogenation is a well established technique in silicon technology. It is easily accomplished by wet-chemical procedures and results in clean and unreconstructed surfaces, which are extremely low in charged surface states and stable against oxidation in air, thus constituting an ideal surface preparation. As a consequence, methods for hydrogenation have been sought for preparing silicon carbide (SiC) surfaces with similar well defined properties. It was soon recognized, however, that due to different surface chemistry new ground had to be broken in order to find a method leading to the desired monatomic hydrogen saturation. In this paper the results of H passivation of SiC surfaces by high-temperature hydrogen annealing will be discussed, thereby placing emphasis on chemical, structural and electronic properties of the resulting surfaces. In addition to their unique properties, hydrogenated hexagonal SiC {0001} surfaces offer the interesting possibility of gaining insight into the formation of silicon- and carbon-rich reconstructions as well. This is due to the fact that to date hydrogenation is the only method providing oxygen-free surfaces with a C to Si ratio of 1:1. Last but not least, the electronic properties of hydrogen-free SiC {0001} surfaces will be alluded to. SiC {0001} surfaces are the only known semiconductor surfaces that can be prepared in their unreconstructed (1 x 1) state with one dangling bond per unit cell by photon induced hydrogen desorption. These surfaces give indications of a Mott-Hubbard surface band structure

  18. High aspect ratio spheromak experiments

    International Nuclear Information System (INIS)

    Robertson, S.; Schmid, P.

    1987-05-01

    The Reversatron RFP (R/a = 50cm/8cm) has been operated as an ohmically heated spheromak of high aspect ratio. We find that the dynamo can drive the toroidal field upward at rates as high as 10 6 G/sec. Discharges can be initiated and ramped upward from seed fields as low as 50 G. Small toroidal bias fields of either polarity (-0.2 < F < 0.2) do not significantly affect operation. 5 refs., 3 figs

  19. Controlled surface chemistry of diamond/β-SiC composite films for preferential protein adsorption.

    Science.gov (United States)

    Wang, Tao; Handschuh-Wang, Stephan; Yang, Yang; Zhuang, Hao; Schlemper, Christoph; Wesner, Daniel; Schönherr, Holger; Zhang, Wenjun; Jiang, Xin

    2014-02-04

    Diamond and SiC both process extraordinary biocompatible, electronic, and chemical properties. A combination of diamond and SiC may lead to highly stable materials, e.g., for implants or biosensors with excellent sensing properties. Here we report on the controllable surface chemistry of diamond/β-SiC composite films and its effect on protein adsorption. For systematic and high-throughput investigations, novel diamond/β-SiC composite films with gradient composition have been synthesized using the hot filament chemical vapor deposition (HFCVD) technique. As revealed by scanning electron microscopy (SEM), the diamond/β-SiC ratio of the composite films shows a continuous change from pure diamond to β-SiC over a length of ∼ 10 mm on the surface. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) was employed to unveil the surface termination of chemically oxidized and hydrogen treated surfaces. The surface chemistry of the composite films was found to depend on diamond/β-SiC ratio and the surface treatment. As observed by confocal fluorescence microscopy, albumin and fibrinogen were preferentially adsorbed from buffer: after surface oxidation, the proteins preferred to adsorb on diamond rather than on β-SiC, resulting in an increasing amount of proteins adsorbed to the gradient surfaces with increasing diamond/β-SiC ratio. By contrast, for hydrogen-treated surfaces, the proteins preferentially adsorbed on β-SiC, leading to a decreasing amount of albumin adsorbed on the gradient surfaces with increasing diamond/β-SiC ratio. The mechanism of preferential protein adsorption is discussed by considering the hydrogen bonding of the water self-association network to OH-terminated surfaces and the change of the polar surface energy component, which was determined according to the van Oss method. These results suggest that the diamond/β-SiC gradient film can be a promising material for biomedical applications which

  20. Tailored Cyclic and Linear Polycarbosilazanes by Barium-Catalyzed N-H/H-Si Dehydrocoupling Reactions.

    Science.gov (United States)

    Bellini, Clément; Orione, Clément; Carpentier, Jean-François; Sarazin, Yann

    2016-03-07

    Ba[CH(SiMe3 )2 ]2 (THF)3 catalyzes the fast and controlled dehydrogenative polymerization of Ph2 SiH2 and p-xylylenediamine to afford polycarbosilazanes. The structure (cyclic versus linear; end-groups) and molecular weight of the macromolecules can be tuned by adjusting the Ph2 SiH2 /diamine feed ratio. A detailed analysis of the resulting materials (mol. wt up to ca. 10 000 g mol(-1) ) is provided. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Raman Spectroscopy of DLC/a-Si Bilayer Film Prepared by Pulsed Filtered Cathodic Arc

    Directory of Open Access Journals (Sweden)

    C. Srisang

    2012-01-01

    Full Text Available DLC/a-Si bilayer film was deposited on germanium substrate. The a-Si layer, a seed layer, was firstly deposited on the substrate using DC magnetron sputtering and DLC layer was then deposited on the a-Si layer using pulsed filtered cathodic arc method. The bilayer films were deposited with different DLC/a-Si thickness ratios, including 2/2, 2/6, 4/4, 6/2, and 9/6. The effect of DLC/a-Si thickness ratios on the sp3 content of DLC was analyzed by Raman spectroscopy. The results show that a-Si layer has no effect on the structure of DLC film. Furthermore, the upper shift in G wavenumber and the decrease in ID/IG inform that sp3 content of the film is directly proportional to DLC thickness. The plot modified from the three-stage model informed that the structural characteristics of DLC/a-Si bilayer films are located close to the tetrahedral amorphous carbon. This information may be important for analyzing and developing bilayer protective films for future hard disk drive.

  2. Tunneling magnetoresistance of ultra-thin Co-SiO2 granular films with narrow current channels

    International Nuclear Information System (INIS)

    Honda, S.; Hirata, M.; Ishimaru, M.

    2005-01-01

    We have constructed the tunneling magnetoresistance (TMR) junction of AuCr/SiO 2 /Co-SiO 2 /SiO 2 /AuCr with narrow current channels, where the TMR occurs in the Co-SiO 2 layer with 10-50 nm thickness. The magnetic properties are independent of thickness, while the TMR properties depend fairly on thickness. The current (I)-bias voltage (V B ) curve is nonlinear, namely the differential resistivity decreases with increasing V B , and also the magnetoresistance ratio decreases

  3. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    International Nuclear Information System (INIS)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  4. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    International Nuclear Information System (INIS)

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  5. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    International Nuclear Information System (INIS)

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  6. SI units in biomedical dosimetry

    International Nuclear Information System (INIS)

    Liden, K.

    1975-01-01

    The International commission on radiation units and measurements (ICRU), during the period from 1953 to 1962 presented its definitions of the quantities absorbed dose, exposure, activity, and dose equivalent and the corresponding special units the rad, the roentgen, the curie, and the rem. At the same time an international practical system of units was developed, Le Systeme International d'Unites (SI). It was adopted by the 11th Conference Generale des Poids et Mesures (CGPM) in 1960 and is now officially introduced in almost all countries. The general implementation of the SI means difficulties for the future use of the special radiation units, because the numerical factors involved prevent their adoption as SI units. In view of this, and after having sampled the opinion in the radiological field, the ICRU prepared a Statement on Units in July, 1974 which was forwarded to the Comite International des Poids et Mesures (CIPM) and its Comite Consultatif des Unites (CCU) for consideration. As a result of this statement the CIPM has now proposed, that the 15rh CGPM adopt special names for two SI units, namely the becquerel, symbol Bq, for the unit of activity of radionuclides equal to the reciprocal second, s 1- , and the gray, symbol Gy, for the unit of absorbed dose equal to the joule per kilogram, J/kg. The 15th CGPM will consider this matter in May, 1975. (author)

  7. Effect of nitrogen flow ratio on structure and properties of zirconium ...

    Indian Academy of Sciences (India)

    Abstract. In this study, zirconium nitride thin films were deposited on Si substrates by ion beam sputtering (IBS). Influence of N2/(N2+Ar) on the structural and physical properties of the films has been investigated with respect to the atomic ratio between nitrogen and zirconium. It was found that the thickness of layers ...

  8. Envera Variable Compression Ratio Engine

    Energy Technology Data Exchange (ETDEWEB)

    Charles Mendler

    2011-03-15

    Aggressive engine downsizing, variable compression ratio and use of the Atkinson cycle are being combined to improve fuel economy by up to 40 percent relative to port fuel injected gasoline engines, while maintaining full engine power. Approach Engine downsizing is viewed by US and foreign automobile manufacturers as one of the best options for improving fuel economy. While this strategy has already demonstrated a degree of success, downsizing and fuel economy gains are currently limited. With new variable compression ratio technology however, the degree of engine downsizing and fuel economy improvement can be greatly increased. A small variable compression ratio (VCR) engine has the potential to return significantly higher vehicle fuel economy while also providing high power. Affordability and potential for near term commercialization are key attributes of the Envera VCR engine. VCR Technology To meet torque and power requirements, a smaller engine needs to do more work per stroke. This is typically accomplished by boosting the incoming charge with either a turbo or supercharger so that more energy is present in the cylinder per stroke to do the work. With current production engines the degree of engine boosting (which correlates to downsizing) is limited by detonation (combustion knock) at high boost levels. Additionally, the turbo or supercharger needs to be responsive and efficient while providing the needed boost. VCR technology eliminates the limitation of engine knock at high load levels by reducing compression ratio to {approx}9:1 (or whatever level is appropriate) when high boost pressures are needed. By reducing the compression ratio during high load demand periods there is increased volume in the cylinder at top dead center (TDC) which allows more charge (or energy) to be present in the cylinder without increasing the peak pressure. Cylinder pressure is thus kept below the level at which the engine would begin to knock. When loads on the engine are low

  9. Effect of Alkaline Activator to Fly Ash Ratio for Geopolymer Stabilized Soil

    Directory of Open Access Journals (Sweden)

    Abdullah Muhammad Sofian

    2017-01-01

    Full Text Available Geopolymer technology have been developed and explored especially in the construction material field. However, lack of research related to geopolymer stabilized soil. In this research, the utilization of geopolymer has been investigated to stabilize the soil including the factors that affecting the geopolymerization process. Unconfined compressive test (UCT used as indicator to the strength development and hence evaluating the performance of geopolymer stabilized soil. This paper focusing on the effect of fly ash/alkaline activator ratio, Na2SiO3/NaOH ratio and curing time on geopolymer stabilized soil. A various mix design at different fly ash/alkaline activator ratio, Na2SiO3/NaOH ratio were prepared and cured for 7 and 28 days. Molarity and the percentage of geopolymer to soil were fixed at 10 molar and 8 percent respectively. Then, the UCT tests were carried out on 38mm diameter x 76mm height specimens. The highest strength obtained at the fly ash/alkaline activator ratio 2.5 and Na2SiO3/NaOH ratio 2.0 at 28 days curing time.

  10. Palladium transport in SiC

    International Nuclear Information System (INIS)

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  11. Palladium transport in SiC

    Energy Technology Data Exchange (ETDEWEB)

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  12. Investigation on the variation of channel resistance and contact resistance of SiZnSnO semiconductor depending on Si contents using transmission line method

    Science.gov (United States)

    Lee, Byeong Hyeon; Han, Sangmin; Lee, Sang Yeol

    2018-01-01

    Amorphous silicon-zinc-tin-oxide (a-SZTO) thin film transistors (TFTs) have been fabricated depending on the silicon ratio in channel layers. The a-SZTO TFT exhibited high electrical properties, such as high mobility of 23 cm2 V-1 s-1, subthreshold swing of 0.74 V/decade and ION/OFF of 2.8 × 108, despite of the addition of Si suppressor. The physical mechanism on the change of the sheet resistance and the contact resistance in a-SZTO TFT has been investigated and proposed closely related with the Si ratio. Both resistances were increased as increasing Si ratio, which clearly indicated that the role of Si is a carrier suppressor directly leading to the increase of channel and contact resistances. To explain the role of Si as a carrier suppressor, the conduction band offset mechanism has been also proposed depending on the change of carrier concentration in channel layer and at the interface between electrode and channel layer. 2007.01-2011.12 Senior Researcher at korea institute of science and technology (KOREA). 2008.01-2011.12 Professor at University of Science and Technology (KOREA). 1995.01-2007.12 Professor at Yonsei University (KOREA). 2002.01-2003.12 Inviting Researcher at Los Alamos National Lab (USA). 1993.01-1995.12 Senior Researcher at Electronics and Telecommunications Research Institute (KOREA). 1992.01-1993.01 Research Associate at State University of New York at Buffalo (USA).

  13. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    International Nuclear Information System (INIS)

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  14. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  15. Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

    Science.gov (United States)

    Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

    2016-01-01

    The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

  16. Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

    Energy Technology Data Exchange (ETDEWEB)

    Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

    2013-12-15

    Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

  17. Refinement of Mg2Si reinforcement in a commercial Al–20%Mg2Si in-situ composite with bismuth, antimony and strontium

    International Nuclear Information System (INIS)

    Nordin, Nur Azmah; Farahany, Saeed; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

    2013-01-01

    Refinement by addition elements of Al–Mg 2 Si alloys is known to result in a change of primary Mg 2 Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg 2 Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg 2 Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg 2 Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg 2 Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg 2 Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms

  18. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  19. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  20. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2017-12-01

    Full Text Available In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It’s indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS, no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  1. Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

    Science.gov (United States)

    Song, Liang; Fu, Kai; Zhang, Zhili; Sun, Shichuang; Li, Weiyi; Yu, Guohao; Hao, Ronghui; Fan, Yaming; Shi, Wenhua; Cai, Yong; Zhang, Baoshun

    2017-12-01

    In this letter, we have studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with different interface Si donor incorporation which is tuned during the deposition process of LPCVD-SiNx which is adopted as gate dielectric and passivation layer. Current collapse of the MIS-HEMTs without field plate is suppressed more effectively by increasing the SiH2Cl2/NH3 flow ratio and the normalized dynamic on-resistance (RON) is reduced two orders magnitude after off-state VDS stress of 600 V for 10 ms. Through interface characterization, we have found that the interface deep-level traps distribution with high Si donor incorporation by increasing the SiH2Cl2/NH3 flow ratio is lowered. It's indicated that the Si donors are most likely to fill and screen the deep-level traps at the interface resulting in the suppression of slow trapping process and the virtual gate effect. Although the Si donor incorporation brings about the increase of gate leakage current (IGS), no clear degradation of breakdown voltage can be seen by choosing appropriate SiH2Cl2/NH3 flow ratio.

  2. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Science.gov (United States)

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  3. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  4. Effect of SiO2, PVA and glycerol concentrations on chemical and mechanical properties of alginate-based films.

    Science.gov (United States)

    Yang, Manli; Shi, Jinsheng; Xia, Yanzhi

    2018-02-01

    Sodium alginate (SA)/polyvinyl alcohol (PVA)/SiO 2 nanocomposite films were prepared by in situ polymerization through solution casting and solvent evaporation. The effect of different SA/PVA ratios, SiO 2 , and glycerol content on the mechanical properties, water content, water solubility, and water vapor permeability were studied. The nanocomposite films were characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and thermal stability (thermogravimetric analysis/differential thermogravimetry) analyses. The nanocomposites showed the highest values of mechanical properties, such as SA/PVA ratio, SiO 2 , and glycerol content was 7:3, 6wt.%, and 0.25g/g SA, respectively. The tensile strength and elongation at break (E%) of the nanocomposites increased by 525.7% and 90.7%, respectively, compared with those of the pure alginate film. The Fourier transform infrared spectra showed a new SiOC band formed in the SA/PVA/SiO 2 nanocomposite film. The scanning electron microscopy image revealed good adhesion between SiO 2 and SA/PVA matrix. After the incorporation of PVA and SiO 2 , the water resistance of the SA/PVA/SiO 2 nanocomposite film was markedly improved. Transparency decreased with increasing PVA content but was enhanced by adding SiO 2 . Copyright © 2017. Published by Elsevier B.V.

  5. Non-LTE Analysis of Interstellar Line Spectra of SiO

    Science.gov (United States)

    Zhang, Ziwei; Stancil, Phillip C.

    2016-01-01

    SiO emission lines are important probes of chemical processes in diverse astrophysical environments. In circumstellar outflows of AGB stars, the production of silicate grains is preceded by SiO formation, making SiO a useful measure of Si depletion. SiO is also commonly observed in shocks associated with the outflows of young stellar objects, both low- and high-mass. To model SiO emission for non-LTE conditions requires collisional rate coefficients due to H2 impact which are currently unavailable. Unknown collisional rate coefficients are often estimated from known systems. For the case of SiO-H2, rate coefficients have previously been adapted from a different collider, He (Dayau & Balanca 2006), based on a reduced-mass scaling approach. Recently it has been suggested that scaling via the interaction potential well depth and the reduced masses of the collisional systems may be more reliable (Walker et al. 2014). Using the non-LTE spectral modeling package Radex (van der Tak et al. 2007), we construct diagnostic plots of SiO line ratios using SiO-H2 collisional rate coefficients based on (i) reduced-mass scaling from the LAMDA database, (ii) potential well-depth scaling, and (iii) a more comprehensive input with multiple colliders (H2, He and H). Our goal is to give a more rigorous approach to SiO line emission simulations to better understand Si chemistry, dust formation/destruction, and other astrophysical processes.This work was supported by NASA ATP grant NNX15AI61G.

  6. Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

    Science.gov (United States)

    Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

    2015-03-01

    Numerical simulation has been made to predict the RF performance of direction and direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for direction 4H-SiC IMPATT compared to direction. However, the quality factor Q for the direction 4H-SiC IMPATT diode is lower than that of direction, which implies that the direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with direction 4H-SiC IMPATT diode.

  7. Low molecular weight chitosan conjugated with folate for siRNA delivery in vitro: optimization studies

    Science.gov (United States)

    Fernandes, Julio C; Qiu, Xingping; Winnik, Francoise M; Benderdour, Mohamed; Zhang, Xiaoling; Dai, Kerong; Shi, Qin

    2012-01-01

    The low transfection efficiency of chitosan is one of its drawbacks as a gene delivery carrier. Low molecular weight chitosan may help to form small-sized polymer-DNA or small interfering RNA (siRNA) complexes. Folate conjugation may improve gene transfection efficiency because of the promoted uptake of folate receptor-bearing cells. In the present study, chitosan was conjugated with folate and investigated for its efficacy as a delivery vector for siRNA in vitro. We demonstrate that the molecular weight of chitosan has a major influence on its biological and physicochemical properties, and very low molecular weight chitosan (below 10 kDa) has difficulty in forming stable complexes with siRNA. In this study, chitosan 25 kDa and 50 kDa completely absorbed siRNA and formed nanoparticles (≤220 nm) at a chitosan to siRNA weight ratio of 50:1. The introduction of a folate ligand onto chitosan decreased nanoparticle toxicity. Compared with chitosan-siRNA, folate-chitosan-siRNA nanoparticles improved gene silencing transfection efficiency. Therefore, folate-chitosan shows potential as a viable candidate vector for safe and efficient siRNA delivery. PMID:23209368

  8. Diffusive charge transport in graphene on SiO 2

    Science.gov (United States)

    Chen, J.-H.; Jang, C.; Ishigami, M.; Xiao, S.; Cullen, W. G.; Williams, E. D.; Fuhrer, M. S.

    2009-07-01

    We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO 2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density ( σ(n)∝n) in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates; increased dielectric screening reduces the scattering from charged impurities, but increases the scattering from short-range scatterers. We evaluate the effects of the corrugations (ripples) of graphene on SiO 2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity that is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO 2 substrate give rise to an activated, carrier density-dependent resistivity. Together the results paint a complete picture of charge carrier transport in graphene on SiO 2 in the diffusive regime.

  9. Entrance channel excitations in the 28Si + 28Si reaction

    International Nuclear Information System (INIS)

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  10. Valence electronic structure of Ni in Ni Si alloys from relative K X-ray intensity studies

    Science.gov (United States)

    Kalayci, Y.; Aydinuraz, A.; Tugluoglu, B.; Mutlu, R. H.

    2007-02-01

    The Kβ-to-Kα X-ray intensity ratio of Ni in Ni 3Si, Ni 2Si and NiSi has been determined by energy dispersive X-ray fluorescence technique. It is found that the intensity ratio of Ni decreases from pure Ni to Ni 2Si and then increases from Ni 2Si to NiSi, in good agreement with the electronic structure calculations cited in the literature. We have also performed band structure calculations for pure Ni in various atomic configurations by means of linear muffin-tin orbital method and used this data with the normalized theoretical intensity ratios cited in the literature to estimate the 3d-occupation numbers of Ni in Ni-Si alloys. It is emphasized that investigation of alloying effect in terms of X-ray intensity ratios should be carried out for the stoichiometric alloys in order to make reliable and quantitative comparisons between theory and experiment in transition metal alloys.

  11. Reproducibility of isotope ratio measurements

    International Nuclear Information System (INIS)

    Elmore, D.

    1981-01-01

    The use of an accelerator as part of a mass spectrometer has improved the sensitivity for measuring low levels of long-lived radionuclides by several orders of magnitude. However, the complexity of a large tandem accelerator and beam transport system has made it difficult to match the precision of low energy mass spectrometry. Although uncertainties for accelerator measured isotope ratios as low as 1% have been obtained under favorable conditions, most errors quoted in the literature for natural samples are in the 5 to 20% range. These errors are dominated by statistics and generally the reproducibility is unknown since the samples are only measured once

  12. GOLD and the fixed ratio

    Directory of Open Access Journals (Sweden)

    Vestbo J

    2012-09-01

    Full Text Available Jørgen VestboUniversity of Manchester, Manchester, UKI read with interest the paper entitled "Diagnosis of airway obstruction in the elderly: contribution of the SARA study" by Sorino et al in a recent issue of this journal.1 Being involved in the Global Initiative for Obstructive Lung Diseases (GOLD, it is nice to see the interest sparked by the GOLD strategy document. However, in the paper by Sorino et al, there are a few misunderstandings around GOLD and the fixed ratio (forced expiratory volume in 1 second/forced volume vital capacity < 0.70 that need clarification.View original paper by Sorino and colleagues.

  13. Carbon isotope ratios of organic matter in Bering Sea settling particles. Extremely high remineralization of organic carbon derived from diatoms

    International Nuclear Information System (INIS)

    Yasuda, Saki; Akagi, Tasuku; Naraoka, Hiroshi; Kitajima, Fumio; Takahashi, Kozo

    2016-01-01

    The carbon isotope ratios of organic carbon in settling particles collected in the highly-diatom-productive Bering Sea were determined. Wet decomposition was employed to oxidize relatively fresh organic matter. The amount of unoxidised organic carbon in the residue following wet decomposition was negligible. The δ 13 C of organic carbon in the settling particles showed a clear relationship against SiO 2 /CaCO 3 ratio of settling particles: approximately -26‰ and -19‰ at lower and higher SiO 2 /CaCO 3 ratios, respectively. The δ 13 C values were largely interpreted in terms of mixing of two major plankton sources. Both δ 13 C and compositional data can be explained consistently only by assuming that more than 98% of diatomaceous organic matter decays and that organic matter derived from carbonate-shelled plankton may remain much less remineralized. A greater amount of diatom-derived organic matter is discovered to be trapped with the increase of SiO 2 /CaCO 3 ratio of the settling particles. The ratio of organic carbon to inorganic carbon, known as the rain ratio, therefore, tends to increase proportionally with the SiO 2 /CaCO 3 ratio under an extremely diatom-productive condition. (author)

  14. β-delayed charged particle decays of neutron-deficient nuclei 20Mg and 23Si and 22Si

    International Nuclear Information System (INIS)

    Babo, Mathieu

    2016-01-01

    The neutron-deficient nuclei 20 Mg, 23 Si and 22 Si were produced by fragmentation at NSCL, at MSU (USA), and implanted into an array of 3 double sided stripped Si detectors, surrounded by 16 high-purity Ge detectors. This novel arrangement allowed the detection of the charged particles emitted by the unbound excited states in coincidence with the γ rays emitted by the de-excitation of the daughter. The βp decay of 20 Mg is very well-known and therefore was used to test and optimize the analysis program. The β-delayed proton transitions to the first 3 excited states in 19 Ne were identified and compared to previous measurements. The half-life, the branching ratio of the transitions and the excitation energies, including the IAS, were measured and are in good agreement with the adopted values. The study of the β+ decay of 23 Si allowed the identification of 14 excited states in 23 Al. The emission of 2 protons from the IAS was unambiguously identified. The measurement of the IAS energy allowed a better determination of the mass excess of 23 Si, giving 23.27 (7) MeV. A possible β3p decay channel was also tentatively identified. Most of the theoretical predictions are in favor of a 2-proton radioactive 22 Si. The β2p decays to the first excited state and the ground state of 20 Na were identified. The branching ratio of the decay to the IAS is 2.05 (44) %, and the IAS excitation energy was measured to be 9040 (54) keV. The additional measurement of the half-life gives T 1/2 = 30.38 (45) ms, and allowed the determination of the partial half-life. In this study, we propose a parameterization of the statistical rate function f for the superallowed Fermi β decays. This allow the first indirect mass measurement of 22 Si ground state, 31.49 (14) MeV. The two-proton threshold is then S2p = 645 (100) keV and does not allow 2p radioactivity. (author) [fr

  15. Hydrometallurgical extraction of Al and Si from kaolinitic clays

    Directory of Open Access Journals (Sweden)

    Eliana G. Pinna

    Full Text Available Abstract Herein is presented the results of a study on the hydrometallurgic extraction and recovery of aluminum and silicon by leaching of kaolinitic clays with HF. The studied extraction parameters were: temperature, reaction time, solid/liquid ratio, concentration, and precipitating agent mass. In the leaching process, mineral dissolutions near 100% were obtained when working at 348 K, solid/liquid ratio 2% w/v, HF 12% v/v, for 120 minutes. The HF leach liquor generated from the dissolution of kaolinitic clays contains H2SiF6and H3AlF6. Studies were conducted to recover the two valuable fluorides as K2SiF6and Na3AlF6by precipitation with alkaline salts from the leach liquor. Phases of precipitated fluorides were identified by XRD and surface morphology by SEM. The purity of the K2SiF6precipitate was 98.8%, whereas for Na3AlF6, it was 89.3%. Also, both synthesized solids are of high commercial value due to their industrial applications.

  16. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  17. Significantly Enhanced Dielectric Performances and High Thermal Conductivity in Poly(vinylidene fluoride)-Based Composites Enabled by SiC@SiO2 Core-Shell Whiskers Alignment.

    Science.gov (United States)

    He, Dalong; Wang, Yao; Song, Silong; Liu, Song; Deng, Yuan

    2017-12-27

    Design of composites with ordered fillers arrangement results in anisotropic performances with greatly enhanced properties along a specific direction, which is a powerful tool to optimize physical properties of composites. Well-aligned core-shell SiC@SiO 2 whiskers in poly(vinylidene fluoride) (PVDF) matrix has been achieved via a modified spinning approach. Because of the high aspect ratio of SiC whiskers, strong anisotropy and significant enhancement in dielectric constant were observed with permittivity 854 along the parallel direction versus 71 along the perpendicular direction at 20 vol % SiC@SiO 2 loading, while little increase in dielectric loss was found due to the highly insulating SiO 2 shell. The anisotropic dielectric behavior of the composite is perfectly understood macroscopically to have originated from anisotropic intensity of interfacial polarization based on an equivalent circuit model of two parallel RC circuits connected in series. Furthermore, finite element simulations on the three-dimensional distribution of local electric field, polarization, and leakage current density in oriented SiC@SiO 2 /PVDF composites under different applied electrical field directions unambiguously revealed that aligned core-shell SiC@SiO 2 whiskers with a high aspect ratio significantly improved dielectric performances. Importantly, the thermal conductivity of the composite was synchronously enhanced over 7 times as compared to that of PVDF matrix along the parallel direction at 20 vol % SiC@SiO 2 whiskers loading. This study highlights an effective strategy to achieve excellent comprehensive properties for high-k dielectrics.

  18. Using Ratio Analysis to Evaluate Financial Performance.

    Science.gov (United States)

    Minter, John; And Others

    1982-01-01

    The ways in which ratio analysis can help in long-range planning, budgeting, and asset management to strengthen financial performance and help avoid financial difficulties are explained. Types of ratios considered include balance sheet ratios, net operating ratios, and contribution and demand ratios. (MSE)

  19. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  20. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    International Nuclear Information System (INIS)

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  1. Target swapping in PLD: An efficient approach for CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films with enhanced luminescent properties

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India); Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India); Department of Nano Sciences and Materials, Central University of Jammu, Rahya-Suchani (Bagla), Samba, 181143 Jammu, J& K (India); Gupta, Vinay [Department of Physics & Astrophysics, University of Delhi, Delhi 110007 (India)

    2017-06-15

    A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} (i.e. 1%Ag doped CdS/SiO{sub 2}) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO{sub 2} are used to deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO{sub 2} in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposites. The efficiencies of emission from pristine CdS:SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO{sub 2} (deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2}) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO{sub 2} are used to deposit CdS/SiO{sub 2} and CdS:Ag(1%)/SiO{sub 2} nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO{sub 2} in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is

  2. Target swapping in PLD: An efficient approach for CdS/SiO2 and CdS:Ag(1%)/SiO2 nanocomposite thin films with enhanced luminescent properties

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2017-01-01

    A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO 2 and CdS:Ag(1%)/SiO 2 (i.e. 1%Ag doped CdS/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiencies of emission from pristine CdS:SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO 2 (deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is achieved from deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiency of

  3. Gas leak tightness of SiC/SiC composites at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  4. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  5. Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

    2017-05-01

    Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

  6. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    International Nuclear Information System (INIS)

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  7. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  8. High resolution investigation of the 30Si(þ, þ)30Si reaction

    NARCIS (Netherlands)

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  9. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  10. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  11. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001 substrate

    Directory of Open Access Journals (Sweden)

    Han Ye

    2014-11-01

    Full Text Available Patterning pit on Si(001 substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  12. U3Si2 Fabrication and Testing for Implementation into the BISON Fuel Performance Code

    Energy Technology Data Exchange (ETDEWEB)

    Knight, Travis W.

    2018-04-23

    A creep test stand was designed and constructed for compressive creep testing of U3Si2 pellets. This is described in Chapter 3.

    • Creep testing of U3Si2 pellets was completed. In total, 13 compressive creep tests of U3Si2 pellets was successfully completed. This is reported in Chapter 3.
    • Secondary creep model of U3Si2 was developed and implemented in BISON. This is described in Chapter 4.
    • Properties of U3Si2 were implemented in BISON. This is described in Chapter 4.
    • A resonant frequency and damping analyzer (RFDA) using impulse excitation technique (IET) was setup, tested, and used to analyze U3Si2 samples to measure Young’s and Shear Moduli which were then used to calculate the Poisson ratio for U3Si2. This is described in Chapter 5.
    • Characterization of U3Si2 samples was completed. Samples were prepared and analyzed by XRD, SEM, and optical microscopy. Grain size analysis was conducted on images.
    SEM with EDS was used to analyze second phase precipitates. Impulse excitation technique was used to determine the Young’s and Shear Moduli of a tile specimen which allowed for the determination of the Poisson ratio. Helium pycnometry and mercury intrusion porosimetry was performed and used with image analysis to determine porosity size distribution. Vickers microindentation characterization method was used to evaluate the mechanical properties of U3Si2 including toughness, hardness, and Vickers hardness. Electrical resistivity measurement was done using the four-point probe method. This is reported in Chapter 5.

  13. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    Directory of Open Access Journals (Sweden)

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  14. Solid-state 27Al and 29Si NMR characterization of hydrates formed in calcium aluminate-silica fume mixtures

    International Nuclear Information System (INIS)

    Pena, P.; Rivas Mercury, J.M.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2008-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) y (OH) 12-4y -Al(OH) 3 mixtures, prepared by hydration of Ca 3 Al 2 O 6 (C 3 A), Ca 12 Al 14 O 33 (C 12 A 7 ) and CaAl 2 O 4 (CA) phases in the presence of silica fume, have been characterized by 29 Si and 27 Al magic-angle spinning-nuclear magnetic resonance (MAS-NMR) spectroscopies. NMR spectroscopy was used to characterize anhydrous and fully hydrated samples. In hydrated compounds, Ca 3 Al 2 (OH) 12 and Al(OH) 3 phases were detected. From the quantitative analysis of 27 Al NMR signals, the Al(OH) 3 /Ca 3 Al 2 (OH) 12 ratio was deduced. The incorporation of Si into the katoite structure, Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x , was followed by 27 Al and 29 Si NMR spectroscopies. Si/OH ratios were determined from the quantitative analysis of 27 Al MAS-NMR components associated with Al(OH) 6 and Al(OSi)(OH) 5 environments. The 29 Si NMR spectroscopy was also used to quantify the unreacted silica and amorphous calcium aluminosilicate hydrates formed, C-S-H and C-A-S-H for short. From 29 Si NMR spectra, the amount of Si incorporated into different phases was estimated. Si and Al concentrations, deduced by NMR, transmission electron microscopy, energy dispersive spectrometry, and Rietveld analysis of both X-ray and neutron data, indicate that only a part of available Si is incorporated in katoite structures. - Graphical abstract: Transmission electron micrograph of CaAl 2 O 4 -microsilica mixture hydrated at 90 deg. C for 31 days showing a cubic Ca 3 Al 2.0±0.2 (SiO 4 ) 0.9±0.2 (OH) 1.8 crystal surrounded by unreacted amorphous silica spheres

  15. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  16. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    International Nuclear Information System (INIS)

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  17. Si quantum dot structures and their applications

    Science.gov (United States)

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  18. Ion beam processes in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  19. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    NARCIS (Netherlands)

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  20. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  1. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Science.gov (United States)

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  2. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

  3. Phonon populations by nanosecond-pulsed Raman scattering in Si

    International Nuclear Information System (INIS)

    Compaan, A.; Lee, M.C.; Trott, G.J.

    1985-01-01

    Since the first time-resolved Raman studies of phonon populations under pulsed-laser-annealing conditions, a number of cw Raman studies have been performed which provide a much improved basis for interpreting the pulsed Raman data. Here we present new pulsed Raman results and interpret them with reference to temperature-dependent resonance effects, high-carrier-density effects, phonon anharmonicity, and laser-induced strain effects. The pulsed Raman data: Stokes to anti-Stokes ratios, shift and shape of the first-order peak, and second-order spectra: indicate the existence of a phase in which the Raman signal disappears followed by a rapidly cooling solid which begins within 300 K of the 1685 K normal melting temperature of Si. We identify a major difficulty in pulsed Raman studies in Si to be the decrease in Raman intensity at high temperatures

  4. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  5. Numerical analysis of knock during HCCI in a high compression ratio methanol engine based on LES with detailed chemical kinetics

    International Nuclear Information System (INIS)

    Zhen, Xudong; Wang, Yang

    2015-01-01

    Highlights: • Knock during HCCI in a high compression ratio methanol engine was modeled. • A detailed methanol mechanism was used to simulate the knocking combustion. • Compared with the SI engines, the HCCI knocking combustion burnt faster. • The reaction rate of HCO had two obvious peaks, one was positive, and another was negative. • Compared with the SI engines, the values of the reaction rates of CH 2 O, H 2 O 2 , and HO 2 were higher, and it had negative peaks. - Abstract: In this study, knock during HCCI (homogeneous charge compression ignition) was studied based on LES (large eddy simulation) with methanol chemical kinetics (84-reaction, 21-species) in a high compression ratio methanol engine. The non-knocking and knocking combustion of SI (spark ignition) and HCCI engines were compared. The results showed that the auto-ignition spots were initially occurred near the combustion chamber wall. The knocking combustion burnt faster during HCCI than SI methanol engine. The HCO reaction rate was different from SI engine, it had two obvious peaks, one was positive peak, and another was negative peak. Compared with the SI methanol engine, in addition to the concentration of HCO, the concentrations of the other intermediate products and species such as CO, OH, CH 2 O, H 2 O 2 , HO 2 were increased significantly; the reaction rates of CH 2 O, H 2 O 2 , and HO 2 had negative peaks, and whose values were several times higher than SI methanol engine

  6. Porous SiC/SiC composites development for industrial application

    International Nuclear Information System (INIS)

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  7. Double transparent conducting layers for Si photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  8. Dynamic behaviors of laser ablated Si particles

    International Nuclear Information System (INIS)

    Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

    1995-01-01

    The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

  9. Double transparent conducting layers for Si photovoltaics

    International Nuclear Information System (INIS)

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  10. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    International Nuclear Information System (INIS)

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  11. Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

    Science.gov (United States)

    Guo, Y. N.; Wei, D. Y.; Xiao, S. Q.; Huang, S. Y.; Zhou, H. P.; Xu, S.

    2013-05-01

    Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by remote low frequency inductively coupled plasma (ICP) chemical vapor deposition system, and the effect of silane/hydrogen ratio on the microstructure and electrical properties of μc-Si:H films was systematically investigated. As silane/hydrogen ratio increases, the crystalline volume fraction Fc decreases and the ratio of the intensity of (220) peak to that of (111) peak drops as silane flow rate is increased. The FTIR result indicates that the μc-Si:H films prepared by remote ICP have a high optical response with a low hydrogen content, which is in favor of reducing light-induced degradation effect. Furthermore, the processing window of the phase transition region for remote ICP is much wider than that for typical ICP. The photosensitivity of μc-Si:H films can exceed 100 at the transition region and this ensures the possibility of the fabrication of microcrystalline silicon thin film solar cells with a open-circuit voltage of about 700 mV.

  12. Innovative SiC/SiC composite for nuclear applications

    International Nuclear Information System (INIS)

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  13. Carbon monoxide sensing properties of B-, Al- and Ga-doped Si nanowires

    Science.gov (United States)

    de Santiago, F.; Trejo, A.; Miranda, A.; Salazar, F.; Carvajal, E.; Pérez, L. A.; Cruz-Irisson, M.

    2018-05-01

    Silicon nanowires (SiNWs) are considered as potential chemical sensors due to their large surface-to-volume ratio and their possible integration into arrays for nanotechnological applications. Detection of harmful gases like CO has been experimentally demonstrated, however, the influence of doping on the sensing capacity of SiNWs has not yet been reported. For this work, we theoretically studied the surface adsorption of a CO molecule on hydrogen-passivated SiNWs grown along the [111] crystallographic direction and compared it with the adsorption of other molecules such as NO, and O2. Three nanowire diameters and three dopant elements (B, Al and Ga) were considered, and calculations were done within the density functional theory framework. The results indicate that CO molecules are more strongly adsorbed on the doped SiNW than on the pristine SiNW. The following trend was observed for the CO adsorption energies: E A[B-doped] > E A[Al-doped] > E A[Ga-doped] > E A[undoped], for all diameters. The electronic charge transfers between the SiNWs and the adsorbed CO were estimated by using a Voronoi population analysis. The CO adsorbed onto the undoped SiNWs has an electron-acceptor character, while the CO adsorbed onto the B-, Al-, and Ga-doped SiNWs exhibits an electron-donor character. Comparing these results with the ones obtained for the NO and O2 adsorption, the larger CO adsorption energy on B-doped SiNWs indicates their good selectivity towards CO. These results suggest that SiNW-based sensors of toxic gases could represent a clear and advantageous application of nanotechnology in the improvement of human quality of life.

  14. Characterization of defects in Si and SiO2-Si using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  15. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    OpenAIRE

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  16. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  17. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  18. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    International Nuclear Information System (INIS)

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  19. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  20. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  1. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  2. Permeability and giant magnetoimpedance in Co69Fe4.5X1.5Si10B15 (X=Cr, Mn, Ni) amorphous ribbons

    International Nuclear Information System (INIS)

    Byon, Kwang Seok; Yu, Seong-Cho; Kim, Cheol Gi

    2001-01-01

    The magnetoimpedance (MI) has been measured in the amorphous ribbons of the soft ferromagnetic alloy Co 69 Fe 4.5 X 1.5 Si 10 B 15 (X=Cr, Mn, Ni) as functions of frequency (f). For all of the three samples, at low frequency, f≤5MHz, the MI ratio increases with increasing frequency, but the MI ratio decreases at high frequency, f≥5MHz. The MI profiles are not changed at low frequency regions of f≤1MHz in the amorphous ribbons. The MI ratio at high frequency of f=5MHz becomes 57% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 , but the MI ratio becomes 30% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 . The MI ratio at f=10MHz becomes 45% in Co 69 Fe 4.5 Cr 1.5 Si 10 B 15 and the MI ratio becomes 23% in Co 69 Fe 4.5 Mn 1.5 Si 10 B 15 and Co 69 Fe 4.5 Ni 1.5 Si 10 B 15 , respectively. The maximum values of field sensitivity are 2.7(X=Cr), 2.5(X=Mn), 2.2(X=Ni)%/Oe for f=5MHz. [copyright] 2001 American Institute of Physics

  3. Structural and magnetic study of mechanically deformed Fe rich FeAlSi ternary alloys

    International Nuclear Information System (INIS)

    Legarra, E.; Apiñaniz, E.; Plazaola, F.

    2012-01-01

    Highlights: ► Addition of Si to binary Fe–Al alloys makes the disordering more difficult. ► Si addition opposes the large volume increase found in FeAl alloys with deformation. ► Disordering induces a redistribution of non-ferrous atoms around Fe atoms in Fe 75 Al 25−x Si x and Fe 70 Al 30−x Si x . ► Addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe. ► Si inhibits the para-ferro transition found in Fe 60 Al 40 alloy with disordering. - Abstract: In this work we study systematically the influence of different Al/Si ratios on the magnetic and structural properties of mechanically disordered powder Fe 75 Al 25−x Si x , Fe 70 Al 30−x Si x and Fe 60 Al 40−x Si x alloys by means of Mössbauer spectroscopy, X-ray diffraction and magnetic measurements. In order to obtain different stages of disorder the alloys were deformed by different methods: crushing induction melted alloys and ball milling annealed (ordered) alloys using different number of balls and speed. X-ray and Mössbauer data show that mechanical deformation induces the disordered A2 structure in these alloys. The results indicate that addition of Si to binary Fe–Al alloys makes the disordering more difficult. In addition, X-ray diffraction patterns show that the normalized lattice parameter variation of the disordered alloys of each composition decreases monotonically with Si content, indicating clearly that Si addition opposes the large volume increase found in FeAl alloys with deformation. The study of the hyperfine fields indicates that there is a redistribution of non-ferrous atoms around Fe atoms with the disordering; indeed, there is an inversion of the behavior of the hyperfine field of the Fe atoms. On the other hand, the magnetic measurements indicate that addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe.

  4. Reductively Responsive Hydrogel Nanoparticles with Uniform Size, Shape, and Tunable Composition for Systemic siRNA Delivery in Vivo.

    Science.gov (United States)

    Ma, Da; Tian, Shaomin; Baryza, Jeremy; Luft, J Christopher; DeSimone, Joseph M

    2015-10-05

    To achieve the great potential of siRNA based gene therapy, safe and efficient systemic delivery in vivo is essential. Here we report reductively responsive hydrogel nanoparticles with highly uniform size and shape for systemic siRNA delivery in vivo. "Blank" hydrogel nanoparticles with high aspect ratio were prepared using continuous particle fabrication based on PRINT (particle replication in nonwetting templates). Subsequently, siRNA was conjugated to "blank" nanoparticles via a disulfide linker with a high loading ratio of up to 18 wt %, followed by surface modification to enhance transfection. This fabrication process could be easily scaled up to prepare large quantity of hydrogel nanoparticles. By controlling hydrogel composition, surface modification, and siRNA loading ratio, siRNA conjugated nanoparticles were highly tunable to achieve high transfection efficiency in vitro. FVII-siRNA conjugated nanoparticles were further stabilized with surface coating for in vivo siRNA delivery to liver hepatocytes, and successful gene silencing was demonstrated at both mRNA and protein levels.

  5. Improvement of μc-Si:H n–i–p cell efficiency with an i-layer made by hot-wire CVD by reverse H2-profiling

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    The technique of maintaining a proper crystalline ratio in microcrystalline silicon (μc-Si:H) layers along the thickness direction by decreasing the H2 dilution ratio during deposition (H2 profiling) was introduced by several laboratories while optimizing either n–i–p or p–i–n μc-Si:H cells made by

  6. Effects of nano-SiO{sub 2} particles on surface tracking characteristics of silicone rubber composites

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yong, E-mail: tjuliuyong@tju.edu.cn; Li, Zhonglei; Du, Boxue [Key Laboratory of Smart Grid of Ministry of Education (Tianjin University), School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072 (China)

    2014-09-08

    Compared with neat silicone rubber composites (SiRCs), SiRCs filled with nano-sized SiO{sub 2} particles at weight ratios from 0.1 to 1.0 wt. % exhibit a higher surface flashover voltage and a greater resistance to surface tracking. Scanning electron microscopy images of tracking morphologies indicate that the SiO{sub 2} particles are situated in close proximity to the polymeric chains and act as bridges to stabilize the chains and maintain the structure of the composite. Higher concentrations of nano-sized SiO{sub 2} particles, however, (above 0.3 wt. %) produce defects in the molecular network which lead to reductions in both the surface flashover voltage and the resistance to surface tracking, although these reduced values are still superior to those of neat SiRCs. Therefore, SiRCs filled with nano-sized SiO{sub 2} particles, especially at an optimal weight ratio (0.1 to 0.3 wt. %), may have significant potential applications as outdoor insulators for power systems.

  7. First-principles investigation on the composition of Ni-Si precipitates formed in irradiated stainless steels

    Science.gov (United States)

    Chen, Dongyue; Murakami, Kenta; Dohi, Kenji; Nishida, Kenji; Ohnuma, Toshiharu; Soneda, Naoki; Li, Zhengcao; Liu, Li; Sekimura, Naoto

    2017-10-01

    Recent atom probe tomography (APT) study has revealed the complicated nature of Ni-Si precipitates in irradiated stainless steels. Although Ni3Si γ‧ phase has been confirmed under transmission electron microscopy (TEM), the Ni/Si ratio of the precipitates detected by APT is smaller than its theoretical value 3. An interpretation of the APT results is provided in this work by considering the lattice defects in the Ni3Si γ‧ phase. Using first principles calculations, Si substitutions on Ni sites were found to be the most thermodynamically stable among all the single defects considered here. Although two such substitutional defects are repulsive to each other, the repulsion decreases quickly as their separation distance grows. By keeping a large enough distance between each other, multiple Si substitutions can appear at high densities in the γ‧ phase, which can be one important contributor to the small Ni/Si atom ratio in Ni-Si precipitates observed by APT.

  8. Molecular beam epitaxy of InN nanowires on Si

    Science.gov (United States)

    Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

    2015-10-01

    We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

  9. K X-ray production cross sections, Kβ/Kα ratios, and radiative Auger ratios for protons impacting low-Z elements

    International Nuclear Information System (INIS)

    Cipolla, Sam J.

    1999-01-01

    A Cockcroft-Walton accelerator was used to produce 50-300 keV protons to excite characteristic X-rays from thick targets of elements from Z=21 to 32, using an efficiency-calibrated Si(Li) detector equipped with an ultra-thin window. X-ray production cross sections were determined and compared with prevailing theories. Special attention was paid to accounting for the radiative Auger effects (RAE) in the analysis of the X-ray energy spectra. Ratios of RAE to K α and K β intensities, as well as K β /K α ratios, will be compared to theoretical values

  10. Determination of /sup 240/Pu//sup 239/Pu ratio in the environmental samples based on the measurement of Lx/. cap alpha. -ray activity ratio

    Energy Technology Data Exchange (ETDEWEB)

    Komura, K.; Sakanoue, M.; Yamamoto, M.

    1984-06-01

    The determination of the /sup 240/Pu//sup 239/Pu isotopic ratio in environmental samples has been attempted by the measurement of the Lx/..cap alpha..-ray activity ratio using a Ge-LEPS (low-energy photon spectrometer) and a surface-barrier Si detector. By this method, interesting data were obtained for various samples collected from Thule, Greenland, Bikini Atoll and Nagasaki, as well as for some soils collected from near and off-site locations of atomic power stations.

  11. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  12. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  13. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  14. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    International Nuclear Information System (INIS)

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  15. Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

    Science.gov (United States)

    Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

    2018-06-01

    The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

  16. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  17. Isokinetic Hamstrings: Quadriceps Ratios in Intercollegiate Athletes.

    Science.gov (United States)

    Rosene, John M.; Fogarty, Tracey D.; Mahaffey, Brian L.

    2001-01-01

    Compared the differences in the concentric hamstrings to quadriceps (H:Q) ratio among athletes in different sports at three velocities. Measurement of H:Q ratio of both knees among male and female college athletes indicated that the H:Q ratio increased as velocity increased. No differences existed for the H:Q ratio for sport or side of body. (SM)

  18. Fabrication of low reflective nanopore-type black Si layer using one-step Ni-assisted chemical etching for Si solar cell application

    Science.gov (United States)

    Takaloo, AshkanVakilipour; Kolahdouz, Mohammadreza; Poursafar, Jafar; Es, Firat; Turan, Rasit; Ki-Joo, Seung

    2018-03-01

    Nanotextured Si fabricated through metal-assisted chemical etching (MACE) technique exhibits a promising potential for producing antireflective layer for photovoltaic (PV) application. In this study, a novel single-step nickel (Ni) assisted etching technique was applied to produce an antireflective, nonporous Si (black Si) in an aqueous solution containing hydrofluoric acid (HF), hydrogen peroxide (H2O2) and NiSO4 at 40 °C. Field emission scanning electron microscope was used to characterize different morphologies of the textured Si. Optical reflection measurements of samples were carried out to compare the reflectivity of different morphologies. Results indicated that vertical as well as horizontal pores with nanosized diameters were bored in the Si wafer after 1 h treatment in the etching solution containing different molar ratios of H2O2 to HF. Increasing H2O2 concentration in electrochemical etching solution had a considerable influence on the morphology due to higher injection of positive charges from Ni atoms onto the Si surface. Optimized concentration of H2O2 led to formation of an antireflective layer with 2.1% reflectance of incident light.

  19. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  20. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  1. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit, E-mail: amitband@wsu.edu

    2015-08-15

    Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS{sup TM}) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV{sub 0.2}) > 100% Ti-N coating (1846 ± 68.5 HV{sub 0.2}) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV{sub 0.2}). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance.

  2. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    Science.gov (United States)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Kim, Seong Dae; Ahn, Jong-Hyun

    2015-12-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (Ion/Ioff) of up to ˜103, with a current density of 102 A cm-2. We also observed significant dependence of Schottky barrier height Δφb on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier.

  3. Additive manufacturing of Ti-Si-N ceramic coatings on titanium

    International Nuclear Information System (INIS)

    Zhang, Yanning; Sahasrabudhe, Himanshu; Bandyopadhyay, Amit

    2015-01-01

    Highlights: • 3D Printing or additive manufacturing of hard Ti-Si-N based ceramics coating on Ti metal substrate. • Understanding of phase transformation as a function of compositional variation. • Evaluation of influence of processing parameters and composition on wear resistance. - Abstract: In this study, Laser Engineered Net Shaping (LENS TM ) was employed towards Additive Manufacturing/3D Printing of Ti-Si-N coatings with three different Ti-Si ratios on commercially pure titanium (cp-Ti) substrate. Microstructural analysis, phase analysis using X-ray diffraction, wear resistance and hardness measurements were done on LENS™ processed 3D printed coatings. Coatings showed graded microstructures and in situ formed phases. Results showed that microstructural variations and phase changes influence coating's hardness and wear resistance directly. High hardness values were obtained from all samples’ top surface where the hardness of coatings can be ranked as 90% Ti-10% Si-N coating (2093.67 ± 144 HV 0.2 ) > 100% Ti-N coating (1846 ± 68.5 HV 0.2 ) > 75% Ti-25% Si-N coating (1375.3 ± 61.4 HV 0.2 ). However, wear resistance was more dependent on inherent Si content, and samples with higher Si content showed better wear resistance

  4. Synthesis of SiCN@TiO2 core-shell ceramic microspheres via PDCs method

    Science.gov (United States)

    Liu, Hongli; Wei, Ning; Li, Jing; Zhang, Haiyuan; Chu, Peng

    2018-02-01

    A facile and effective polymer-derived ceramics (PDCs) emulsification-crosslinking-pyrolysis method was developed to fabricate SiCN@TiO2 core-shell ceramic microspheres with polyvinylsilazane (PVSZ) and tetrabutyl titanate (TBT) as precursors. The TBT: PVSZ mass ratios, emulsifier concentrations and the pyrolysis temperature were examined as control parameters to tune the size and morphology of microspheres. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) confirmed the synthesized SiCN@TiO2 microspheres to be comprised of SiCN core coated with TiO2 crystals, with an average size of 0.88 μm when pyrolyzed at 1400 °C. The analysis of Fourier transform infrared spectroscopy (FT-IR), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) ensured that SiCN@TiO2 core-shell ceramic microspheres composed of rutile TiO2, β-SiC and Si3N4 crystalline phases, The thermal properties were characterized by thermogravimetric analysis (TGA). The obtained SiCN@TiO2 core-shell ceramic microspheres were the promising candidate of the infrared opacifier in silica aerogels and this technique can be extended to other preceramic polymers.

  5. Vertical field effect tunneling transistor based on graphene-ultrathin Si nanomembrane heterostructures

    International Nuclear Information System (INIS)

    Das, Tanmoy; Jang, Houk; Bok Lee, Jae; Chu, Hyunwoo; Dae Kim, Seong; Ahn, Jong-Hyun

    2015-01-01

    Graphene-based heterostructured vertical transistors have attracted a great deal of research interest. Herein we propose a Si-based technology platform for creating graphene/ultrathin semiconductor/metal (GSM) junctions, which can be applied to large-scale and low-power electronics compatible with a variety of substrates. We fabricated graphene/Si nanomembrane (NM)/metal vertical heterostructures by using a dry transfer technique to transfer Si NMs onto chemical vapor deposition-grown graphene layers. The resulting van der Waals interfaces between graphene and p-Si NMs exhibited nearly ideal Schottky barrier behavior. Due to the low density of states of graphene, the graphene/Si NM Schottky barrier height can be modulated by modulating the band profile in the channel region, yielding well-defined current modulation. We obtained a maximum current on/off ratio (I on /I off ) of up to ∼10 3 , with a current density of 10 2 A cm −2 . We also observed significant dependence of Schottky barrier height Δφ b on the thickness of the Si NMs. We confirmed that the transport in these devices is dominated by the effects of the graphene/Si NM Schottky barrier. (paper)

  6. Influence of Lanthanum on Solidification, Microstructure, and Mechanical Properties of Eutectic Al-Si Piston Alloy

    Science.gov (United States)

    Ahmad, R.; Asmael, M. B. A.

    2016-07-01

    The effects of Lanthanum (La) concentration on the solidification parameters of the α-Al, Al-Si, and Al-Cu phases and on the microstructure, tensile, and hardness properties of eutectic Al-Si-Cu-Mg alloy were systematically investigated. The solidification parameters were examined using computer-aided cooling curve thermal analysis (CA-CCTA). The cooling curve and microstructure analysis showed that La altered the Si structure. The nucleation and growth temperatures of eutectic Si decreased when 0.3 wt.% La was added, and a high depression temperature was obtained with 1.0 wt.% La. High amounts of La considerably modified the Si structure and decreased the area and aspect ratio by 69.9 and 51%, respectively. The thermal analysis result recorded a faster freezing time with the La addition and a 36% alteration in the secondary dendrite arm spacing. Two secondary or ternary La-rich intermetallic phases were formed with needle- and plate-like structures. Furthermore, the mechanical properties were investigated by hardness and tensile tests with different La concentrations. The addition of small amounts of La (0.1 wt.%) significantly improved the ultimate tensile strength and quality index of the Al-Si-Cu-Mg alloy. In addition, the hardness value of Al-11Si-Cu increased by 7-8% with the increasing amount of La added.

  7. Mechanistic profiling of the siRNA delivery dynamics of lipid-polymer hybrid nanoparticles.

    Science.gov (United States)

    Colombo, Stefano; Cun, Dongmei; Remaut, Katrien; Bunker, Matt; Zhang, Jianxin; Martin-Bertelsen, Birte; Yaghmur, Anan; Braeckmans, Kevin; Nielsen, Hanne M; Foged, Camilla