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Sample records for rapid thermally annealed

  1. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  2. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  3. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  4. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  5. Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

    2005-11-21

    A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

  6. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  7. Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

    International Nuclear Information System (INIS)

    Wu, K.-M.; Wang, Y.-H.; Chen, Wei-Chuan; Yang, S.-Y.; Shen, Kuei-Hung; Kao, M.-J.; Tsai, M.-J.; Kuo, C.-Y.; Wu, J.-C.; Horng, Lance

    2007-01-01

    Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co 60 Fe 20 B 20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 deg. C to 250 deg. C . Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 deg. C rapid annealing and still shows about 25% TMR even after 400 deg. C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature

  8. Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

    International Nuclear Information System (INIS)

    Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

    2008-01-01

    Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

  9. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  10. Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

    International Nuclear Information System (INIS)

    Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

    2011-01-01

    Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

  11. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  12. Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

    Directory of Open Access Journals (Sweden)

    Tian Yuan

    2016-01-01

    Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

  13. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    International Nuclear Information System (INIS)

    Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F.J.; Fernandez, M.; Martinez, F.L.

    2003-01-01

    The effect of rapid thermal annealing (RTA) processes on the structural properties of SiO x N y H z films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH 4 , O 2 and N 2 as precursor gases. For SiO x N y H z films with composition close to that of SiO 2 , which have a very low H content, RTA induces thermal relaxation of the lattice and improvement of the structural order. For films of intermediate composition and of compositions close to SiN y H z , the main effect of RTA is the release of H at high temperatures (T>700 deg. C). This H release is more significant in films containing both Si-H and N-H bonds, due to cooperative reactions between both kinds of bonds. In these films the degradation of structural order associated to H release prevails over thermal relaxation, while in those films with only N-H bonds, thermal relaxation predominates. For annealing temperatures in the 500-700 deg. C range, the passivation of dangling bonds by the nonbonded H in the films and the transition from the paramagnetic state to the diamagnetic state of the K center result in a decrease of the density of paramagnetic defects. The H release observed at high annealing temperatures is accompanied by an increase of density of paramagnetic defects

  14. Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

    International Nuclear Information System (INIS)

    Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

    2008-01-01

    We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500-700 deg. C were applied to δ-doped layers encapsulated at 250 deg. C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited

  15. Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

    International Nuclear Information System (INIS)

    Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

    2006-01-01

    We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

  16. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  17. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  18. Activated Carbon Fibers "Thickly Overgrown" by Ag Nanohair Through Self-Assembly and Rapid Thermal Annealing

    Science.gov (United States)

    Yan, Xuefeng; Xu, Sijun; Wang, Qiang; Fan, Xuerong

    2017-11-01

    Anisotropic nanomaterial-modified carbon fibers attract increasing attention because of their superior properties over traditional ones. In this study, activated carbon fibers (ACFs) "thickly overgrown" by Ag nanohair were prepared through self-assembly and rapid thermal annealing. Viscose fibers with well-dispersed silver nanoparticles (AgNPs) on surfaces were first prepared through self-assembly of hyperbranched poly(amino-amine) (HBPAA)-capped AgNPs on viscose surfaces. HBPAA endowed the AgNP surfaces with negative charges and abundant amino groups, allowing AgNPs to monodispersively self-assemble to fiber surfaces. Ag nanohair-grown ACFs were prepared by sequential pre-oxidation and carbonization. Because the carbonization furnace was open-ended, ACFs are immediately transferrable to the outside of the furnace. Therefore, the Ag liquid adsorbed by ACF pores squeezed out to form Ag nanowires through thermal contraction. FESEM characterization indicated that Ag nanohairs stood on ACF surface and grew from ACF caps. XPS and XRD characterization showed that Ag successfully assembled to fiber surfaces and retained its metallic state even after high-temperature carbonization. TG analysis suggested that Ag nanohair-grown ACFs maintained their excellent thermal stabilities. Finally, the fabricated ACFs showed excellent and durable antibacterial activities, and the developed method may provide a potential strategy for preparing metal nanowire-grown ACFs.

  19. Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

    Science.gov (United States)

    Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

    2017-08-09

    High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

  20. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

    Science.gov (United States)

    2013-01-01

    Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

  1. Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M

    2015-01-01

    The effect of post-growth rapid thermal annealing on structural and optical properties of InP 1−x Bi x thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions. (paper)

  2. Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

    NARCIS (Netherlands)

    Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

    2016-01-01

    Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

  3. Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

    2014-10-15

    TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

  4. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    International Nuclear Information System (INIS)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-01-01

    A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

  5. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  6. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  7. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  8. Evolution of interface and surface structures of ZnO/Al2 O3 multilayers upon rapid thermal annealing

    Science.gov (United States)

    Liu, H. H.; Chen, Q. Y.; Chang, C. F.; Hsieh, W. C.; Wadekar, P. V.; Huang, H. C.; Liao, H. H.; Seo, H. W.; Chu, W. K.

    2015-03-01

    ZnO ∖Al2O3 multilayers were deposited on sapphires by atomic layer deposition at 85°C. This low substrate temperature ensures good interface smoothness useful for study of interfacial reaction or interdiffusion. Our study aimed at the effects of rapid thermal annealing at different annealing temperatures, times and PAr:PO2. XRR and XRD techniques were used to investigate the kinetics from which various terms of the activation energies could be determined. HR-TEM and electron diffraction were carried out to correlate the microstructures and interfacial alignments as a result of the reactions. AFM were used to assist SEM profiling of the surface morphological evolution in association with the TEM observations.

  9. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  10. Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

    International Nuclear Information System (INIS)

    Kahen, K.B.; Rajeswaran, G.; Lee, S.T.

    1988-01-01

    A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect

  11. Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1993-01-01

    process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

  12. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    Science.gov (United States)

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In 2 Se 3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In 2 Se 3 vapor and produce the high uniformity In 2 Se 3 nanowires. The in situ annealing TEM is used to realize the effect of heating

  13. Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

    International Nuclear Information System (INIS)

    Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

  14. Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

    International Nuclear Information System (INIS)

    Babinski, Adam; Jasinski, J.; Bozek, R.; Szepielow, A.; Baranowski, J. M.

    2001-01-01

    The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 C). QDs cannot be distinguished after RTA at temperature 800 C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 C, the peak is due to the QDs. After RTA at 800 C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface

  15. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  16. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  17. Formation of VO{sub 2} by rapid thermal annealing and cooling of sputtered vanadium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ba, Cheikhou O. F., E-mail: cheikhou.ba.1@ulaval.ca; Fortin, Vincent; Bah, Souleymane T.; Vallée, Réal [Centre d' optique, photonique et laser (COPL), Université Laval, Québec G1V 0A6 (Canada); Pandurang, Ashrit [Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Université de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)

    2016-05-15

    Sputtered vanadium-rich films were subjected to rapid thermal annealing-cooling (RTAC) in air to produce vanadium dioxide (VO{sub 2}) thin films with thermochromic switching behavior. High heating and cooling rates in the thermal oxidation process provided an increased ability to control the film's microstructure. X-ray diffraction patterns of the films revealed less intense VO{sub 2} peaks compared to traditional polycrystalline samples fabricated with a standard (slower) cooling time. Such films also exhibit a high optical switching reflectance contrast, unlike the traditional polycrystalline VO{sub 2} thin films, which show a more pronounced transmittance switching. The authors find that the RTAC process stabilizes the VO{sub 2} (M2) metastable phase, enabling a rutile-semiconductor phase transition (R-M2), followed by a semiconductor–semiconductor phase transition (M2-M1).

  18. Investigation of Near-Surface Defects Induced by Spike Rapid Thermal Annealing in c-SILICON Solar Cells

    Science.gov (United States)

    Liu, Guodong; Ren, Pan; Zhang, Dayong; Wang, Weiping; Li, Jianfeng

    2016-01-01

    The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J-V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm-3.

  19. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

    Science.gov (United States)

    Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi

    2018-02-01

    The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

  20. Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission device

    International Nuclear Information System (INIS)

    Uh, Hyung Soo; Park, Sang Sik

    2006-01-01

    In this paper, we demonstrate a new triode-type field emitter arrays using carbon nanotubes (CNTs) as an electron emitter source. In the proposed structure, the gate electrode is located underneath the cathode electrode and the extractor electrode is surrounded by CNT emitters. CNTs were selectively grown on the patterned Ni catalyst layer by using plasma-enhanced chemical vapor deposition (PECVD). Vertically aligned CNTs were grown with gas mixture of acetylene and ammonia under external DC bias. Compared with a conventional under-gate structure, the proposed structure reduced the turn-on voltage by about 30%. In addition, with a view to controlling the density of CNTs, Ni catalyst thickness was varied and rapid thermal annealing (RTA) treatment was optionally adopted before CNT growth. With controlled Ni thickness and RTA condition, field emission efficiency was greatly improved by reducing the density of CNTs, which is due to the reduction of the electric field screening effect caused by dense CNTs

  1. Investigation of modified thin SnO2 layers treated by rapid thermal annealing by means of hollow cathode spectroscopy and AFM technique

    International Nuclear Information System (INIS)

    Djulgerova, R; Popova, L; Beshkov, G; Petrovic, Z Lju; Rakocevic, Z; Mihailov, V; Gencheva, V; Dohnalik, T

    2006-01-01

    By means of hollow cathode spectroscopy and atomic force microscopy the surface morphology and composition of SnO 2 thin film, modified with hexamethyldisilazane after rapid thermal annealing treatment (800-1200 deg. C), are investigated. Formation of crystalline structure is suggested at lower temperatures. Depolimerization, destruction and dehydration are developed at temperatures of 1200 deg. C. It is shown that the rapid thermal annealing treatment could modify both the surface morphology and the composition of the layer, thus changing the adsorption ability of the sensing layer. The results confirm the ability of hollow cathode emission spectroscopy for depth profiling of new materials especially combined with standard techniques

  2. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

    2009-03-15

    In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

  3. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

    2015-11-15

    Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  4. Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.

    Science.gov (United States)

    Wang, Xiaodan; Estradé, Sonia; Lin, Yuanjing; Yu, Feng; Lopez-Conesa, Lluis; Zhou, Hao; Gurram, Sanjeev Kumar; Peiró, Francesca; Fan, Zhiyong; Shen, Hao; Schaefer, Lothar; Braeuer, Guenter; Waag, Andreas

    2017-12-01

    Recently, colored H-doped TiO 2 (H-TiO 2 ) has demonstrated enhanced photoelectrochemical (PEC) performance due to its unique crystalline core-disordered shell nanostructures and consequent enhanced conduction behaviors between the core-shell homo-interfaces. Although various hydrogenation approaches to obtain H-TiO 2 have been developed, such as high temperature hydrogen furnace tube annealing, high pressure hydrogen annealing, hydrogen-plasma assisted reaction, aluminum reduction and electrochemical reduction etc., there is still a lack of a hydrogenation approach in a controlled manner where all processing parameters (temperature, time and hydrogen flux) were precisely controlled in order to improve the PEC performance of H-TiO 2 and understand the physical insight of enhanced PEC performance. Here, we report for the first time a controlled and local rapid thermal annealing (RTA) approach to prepare hydrogenated core-shell H-TiO 2 nanorods grown on F:SnO 2 (FTO) substrate in order to address the degradation issue of FTO in the typical TiO 2 nanorods/FTO system observed in the conventional non-RTA treated approaches. Without the FTO degradation in the RTA approach, we systematically studied the intrinsic relationship between the annealing temperature, structural, optical, and photoelectrochemical properties in order to understand the role of the disordered shell on the improved photoelectrochemical behavior of H-TiO 2 nanorods. Our investigation shows that the improvement of PEC performance could be attributed to (i) band gap narrowing from 3.0 to 2.9 eV; (ii) improved optical absorption in the visible range induced by the three-dimensional (3D) morphology and rough surface of the disordered shell; (iii) increased proper donor density; (iv) enhanced electron-hole separation and injection efficiency due to the formation of disordered shell after hydrogenation. The RTA approach developed here can be used as a suitable hydrogenation process for TiO 2 nanorods

  5. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  6. Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Yoon, Young Soo

    2004-01-01

    We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

  7. Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Belayachi, A.; Heiser, T.; Schunck, J.P.; Bourdais, S.; Bloechl, P.; Huber, A.; Kempf, A

    2003-09-15

    The transient ion drift (TID) technique has been recently proposed for copper trace detection in silicon. Cu atoms may be present either in the vicinity of the Si surface or within the volume. In the latter case they are either gathered at secondary defects or form precipitates believed to be silicides. In order to become detectable by TID Cu atoms must be put into the highly mobile interstitial state. Depending on the initial configuration of the Cu/Si system different physical mechanisms may enable Cu atoms to become 'TID active'. In this work we study the Cu activation process using rapid thermal processing (RTP) in an attempt to minimise the thermal budget required to achieve a complete activation. Both, surface and volume contaminated samples are investigated. During RTP treatments the activation of surface Cu atoms is found to proceed significantly faster than during standard furnace anneal. We tentatively attribute this behaviour to the UV light exposure associated with the RTP, which may enhance the release of copper atoms from the surface. The dissolution kinetics of the Cu precipitates occurring during RTPs are found to be only limited by Cu diffusion. The RTP/TID process is used to study the low temperature reaction path of supersaturated Cu. If prior to the RTP process, Cu atoms are chemically removed from the surface or near surface region, TID measures only the residual bulk Cu atoms. Our results show that out-diffusion and near-surface precipitation are reducing mostly the copper supersaturation.

  8. Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

    International Nuclear Information System (INIS)

    Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

    2011-01-01

    This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.

  9. Structural stability of hydrogenated amorphous carbon overcoats used in heat-assisted magnetic recording investigated by rapid thermal annealing

    KAUST Repository

    Wang, N.; Komvopoulos, K.; Rose, F.; Marchon, B.

    2013-01-01

    Ultrathin amorphous carbon (a-C) films are extensively used as protective overcoats of magnetic recording media. Increasing demands for even higher storage densities have necessitated the development of new storage technologies, such as heat-assisted magnetic recording (HAMR), which uses laser-assisted heating to record data on high-stability media that can store single bits in extremely small areas (∼1 Tbit/in.2). Because HAMR relies on locally changing the coercivity of the magnetic medium by raising the temperature above the Curie temperature for data to be stored by the magnetic write field, it raises a concern about the structural stability of the ultrathin a-C film. In this study, rapid thermal annealing (RTA) experiments were performed to examine the thermal stability of ultrathin hydrogenated amorphous carbon (a-C:H) films deposited by plasma-enhanced chemical vapor deposition. Structural changes in the a-C:H films caused by RTA were investigated by x-ray photoelectron spectroscopy, Raman spectroscopy, x-ray reflectivity, and conductive atomic force microscopy. The results show that the films exhibit thermal stability up to a maximum temperature in the range of 400-450 °C. Heating above this critical temperature leads to hydrogen depletion and sp 2 clustering. The critical temperature determined by the results of this study represents an upper bound of the temperature rise due to laser heating in HAMR hard-disk drives and the Curie temperature of magnetic materials used in HAMR hard disks. © 2013 American Institute of Physics.

  10. Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

    Directory of Open Access Journals (Sweden)

    Charith Jayanada Koswaththage

    2016-11-01

    Full Text Available InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.

  11. Characterization of Si(1 1 1) crystals implanted with Sb{sup +} ions and annealed by rapid thermal processing

    Energy Technology Data Exchange (ETDEWEB)

    Labbani, R.; Halimi, R.; Laoui, T.; Vantomme, A.; Pipeleers, B.; Roebben, G

    2003-09-15

    Monocrystalline Si(1 1 1) targets are implanted (at room temperature) with antimony ions at 120 keV energy to 5x10{sup 14} or 5x10{sup 15} Sb{sup +} cm{sup -2} dose. The samples are heat treated by means of rapid thermal processing (RTP) at 1000 deg. C during 60 s, under nitrogen atmosphere. In this work, we report the measured evolution of the silicon surface damage and the radiation damage recovery in relation to antimony dose and RTP processing. We also study the behavior of antimony dopant into Si(1 1 1) specimens. The investigation is carried out by He{sup +} Rutherford backscattering spectrometry (RBS; operating at 1.57 MeV energy in both random and channeling modes), X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques. It is shown that a good surface damage recovery is obtained for all the annealed samples. However, after RTP, a significant loss of antimony has occurred for the specimens which are implanted with 5x10{sup 15} Sb{sup +} cm{sup -2} dose. This suggests an antimony out-diffusion. Finally, a good morphological characterization of the specimens is provided by AFM.

  12. Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass

    Directory of Open Access Journals (Sweden)

    Mason L. Terry

    2007-01-01

    Full Text Available The changes in open-circuit voltage (Voc, short-circuit current density (Jsc, and internal quantum efficiency (IQE of aLuminum induced crystallization, ion-assisted deposition (ALICIA polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.

  13. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  14. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  15. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  16. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  17. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    International Nuclear Information System (INIS)

    Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-01-01

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

  18. Si diffusion in compositional disordering of Si-implanted GaAs/AlGaAs superlattices induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    Uematsu, Masashi; Yanagawa, Fumihiko

    1988-01-01

    The Si diffusion in Si-implanted GaAs/Al 0.5 Ga 0.5 As superlattices intermixed in the disrodering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1 x 10 19 cm -3 , which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering. (author)

  19. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  20. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  1. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

    2013-01-01

    The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

  2. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

    Science.gov (United States)

    Zhao, Chong-Jun; Liu, Yang; Zhang, Jing-Yan; Sun, Li; Ding, Lei; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Yu, Guang-Hua

    2012-08-01

    To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 °C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 °C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement.

  3. Effect of Thermal Annealing and Second Harmonic Generation on Bulk Damage Performance of Rapid-Growth KDP Type I Doublers at 1064 nm

    International Nuclear Information System (INIS)

    Runkel, M; Maricle, S; Torres, R; Auerbach, J; Floyd, R; Hawley-Fedder, R; Burnham, A K

    2000-01-01

    This paper discusses the results of thermal annealing and in-situ second harmonic generation (SHG) damage tests performed on six rapid growth KDP type 1 doubler crystals at 1064 nm (1 ω) on the Zeus automated damage test facility. Unconditioned (S/1) and conditioned (R/1) damage probability tests were performed before and after thermal annealing, then with and without SHG on six doubler crystals from the NIF-size, rapid growth KDP boule F6. The tests revealed that unannealed, last-grown material from the boule in either prismatic or pyramidal sectors exhibited the highest damage curves. After thermal annealing at 160 C for seven days, the prismatic sector samples increased in performance ranging from 1.6 to 2.4X, while material from the pyramidal sector increased only modestly, ranging from 1.0 to 1.4X. Second harmonic generation decreased the damage fluence by an average of 20 percent for the S/1 tests and 40 percent for R/1 tests. Conversion efficiencies under test conditions were measured to be 20 to 30 percent and compared quite well to predicted behavior, as modeled by LLNL frequency conversion computer codes. The damage probabilities at the 1 ω NIF redline fluence (scaled to 10 ns via t 0.5 ) for S/1 tests for the unannealed samples ranged from 20 percent in one sample to 90-100 percent for the other 5 samples. Thermal annealing reduced the damage probabilities to less than 35 percent for 3 of the poor-performing crystals, while two pyramidal samples remained in the 80 to 90 percent range. Second harmonic generation in the annealed crystal increased the S/1 damage probabilities on all the crystals and ranged from 40 to 100 percent. In contrast, R/1 testing of an unannealed crystal resulted in a damage probability at the NIF redline fluence of 16%. Annealing increased the damage performance to the extent that all test sites survived NIF redline fluences without damage. Second harmonic generation in the R/1 test yielded a damage probability of less than 2

  4. Electrical characteristics and preparation of (Ba0.5Sr0.5)TiO3 films by spray pyrolysis and rapid thermal annealing

    International Nuclear Information System (INIS)

    Koo, Horngshow; Ku, Hongkou; Kawai, Tomoji; Chen Mi

    2007-01-01

    Functional films of (Ba 0.5 Sr 0.5 )TiO 3 on Pt (1000 A)/Ti (100 A)/SiO 2 (2000 A)/Si substrates are prepared by spray pyrolysis and subsequently rapid thermal annealing. Barium nitrate, strontium nitrate and titanium isopropoxide are used as starting materials with ethylene glycol as solvent. For (Ba 0.5 Sr 0.5 )TiO 3 functional thin film, thermal characteristics of the precursor powder scratched from as-sprayed films show a remarkable peak around 300-400degC and 57.7% weight loss up to 1000degC. The as-sprayed precursor film with coffee-like color and amorphous-like phase is transformed into the resultant film with white, crystalline perovskite phase and characteristic peaks (110) and (100). The resultant films show correspondent increases of dielectric constant, leakage current and dissipation factor with increasing annealing temperatures. The dielectric constant is 264 and tangent loss is 0.21 in the resultant films annealed at 750degC for 5 min while leakage current density is 1.5x10 -6 A/cm 2 in the film annealed at 550degC for 5 min. (author)

  5. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  6. Chemical bonding modifications of tetrahedral amorphous carbon and nitrogenated tetrahedral amorphous carbon films induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    McCann, R.; Roy, S.S.; Papakonstantinou, P.; Bain, M.F.; Gamble, H.S.; McLaughlin, J.A.

    2005-01-01

    Tetrahedral amorphous carbon (ta-C) and nitrogenated tetrahedral amorphous carbon films (ta-CN x ), deposited by double bend off plane Filtered Vacuum Cathodic Arc were annealed up to 1000 deg. C in flowing argon for 2 min. Modifications on the chemical bonding structure of the rapidly annealed films, as a function of temperature, were investigated by NEXAFS, X-ray photoelectron and Raman spectroscopies. The interpretation of these spectra is discussed. The results demonstrate that the structure of undoped ta-C films prepared at floating potential with an arc current of 80 A remains stable up to 900 deg. C, whereas that of ta-CN x containing 12 at.% nitrogen is stable up to 700 deg. C. At higher temperatures, all the spectra indicated the predominant formation of graphitic carbon. Through NEXAFS studies, we clearly observed three π* resonance peaks at the ' N K edge structure. The origin of these three peaks is not well established in the literature. However our temperature-dependant study ascertained that the first peak originates from C=N bonds and the third peak originates from the incorporation of nitrogen into the graphite like domains

  7. Effect of rapid thermal annealing on the Mo back contact properties for Cu_2ZnSnSe_4 solar cells

    International Nuclear Information System (INIS)

    Placidi, Marcel; Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus; Alcobé, Xavier; Pérez-Rodríguez, Alejandro; Saucedo, Edgardo

    2016-01-01

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu_2ZnSnSe_4 (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  8. Effect of rapid thermal annealing on the Mo back contact properties for Cu{sub 2}ZnSnSe{sub 4} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: mplacidi@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Alcobé, Xavier [Centres Científics i Tecnològics (CCiTUB), Lluis Solé i Sabarís 1, 08028 Barcelona (Spain); Pérez-Rodríguez, Alejandro [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona (Spain); Saucedo, Edgardo [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain)

    2016-08-05

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu{sub 2}ZnSnSe{sub 4} (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  9. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

    International Nuclear Information System (INIS)

    Fu Mingyue; Tsai, J.-H.; Yang, C.-F.; Liao, C.-H.

    2008-01-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3x10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

  10. Rapid phase segregation of P3HT:PCBM composites by thermal annealing for high-performance bulk-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fan, X.; Fang, G.J.; Qin, P.L.; Cheng, F.; Zhao, X.Z. [Wuhan University, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan (China)

    2011-12-15

    The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules based on blends of poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures of a few micrometers up to 60 {mu}m in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment, the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility. And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum in the XRD patterns. Corresponding current-voltage curves are measured in quantity and we propose a model to explain the effect of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing a viewpoint towards high performance of BHJ solar cells. (orig.)

  11. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  12. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

    Science.gov (United States)

    Kal, S.; Kasko, I.; Ryssel, H.

    1995-10-01

    The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

  13. Formation of plasmonic silver nanoparticles using rapid thermal annealing at low temperature and study in reflectance reduction of Si surface

    Science.gov (United States)

    Barman, Bidyut; Dhasmana, Hrishikesh; Verma, Abhishek; Kumar, Amit; Pratap Chaudhary, Shiv; Jain, V. K.

    2017-09-01

    This work presents studies of plasmonic silver nanoparticles (AgNPs) formation at low temperatures (200 °C-300 °C) onto Si surface by sputtering followed with rapid thermal processing (RTP) for different time durations(5-30 min). The study reveals that 20 min RTP at all temperatures show minimum average size of AgNPs (60.42 nm) with corresponding reduction in reflectance of Si surface from 40.12% to mere 1.15% only in wavelength region 300-800 nm for RTP at 200 °C. A detailed supporting growth mechanism is also discussed. This low temperature technique can be helpful in achieving efficiency improvement in solar cells via reflectance reduction with additional features such as reproducibility, minimal time and very good adhesion without damaging underlying layers device parameters.

  14. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  15. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L1{sub 0} ordering by introducing Ag cap-layers

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, S.C. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Tsai, J.L., E-mail: tsaijl@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Chang, Y.C. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lee, H.Y. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan (China)

    2015-11-15

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1{sub 0} ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1{sub 0} ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture.

  16. Shift in room-temperature photoluminescence of low-fluence Si{sup +}-implanted SiO{sub 2} films subjected to rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mingyue, Fu [Department of Avionics Engineering, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Tsai, J -H [Department of Mathematics and Physics, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Yang, C -F [Department of Chemical and Materials Engineering, National Kaohsiung University, Nan-Tzu District, Kaohsiung 811, Taiwan (China); Liao, C.-H. [Department of Physics, Chinese Military Academy, Fengshan, Kaohsiung 830, Taiwan (China)], E-mail: fumy@cc.cafa.edu.tw

    2008-12-15

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO{sub 2} films implanted by different doses of Si{sup +} ions. Room-temperature PL from 400-nm-thick SiO{sub 2} films implanted to a dose of 3x10{sup 16} cm{sup -2} shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO{sub 2} films followed by RTA may be effective for tuning Si-based photonic devices.

  17. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L10 ordering by introducing Ag cap-layers

    International Nuclear Information System (INIS)

    Hsiao, S.N.; Wu, S.C.; Liu, S.H.; Tsai, J.L.; Chen, S.K.; Chang, Y.C.; Lee, H.Y.

    2015-01-01

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1 0 ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1 0 ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture

  18. GaInAs Junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing

    International Nuclear Information System (INIS)

    Selders, J.; Wachs, H.J.; Jurgensen, H.

    1986-01-01

    GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 x 10 7 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm 2 /Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm 2 . (author)

  19. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  20. Rapid flash annealing of thermally reactive copolymers in a roll-to-roll process for polymer solar cells

    DEFF Research Database (Denmark)

    Helgesen, Martin; Carlé, Jon Eggert; Andreasen, Birgitta

    2012-01-01

    intensity pulsed light, delivered by a commercial photonic sintering system. Thermally labile ester groups are positioned on the DTZ unit of the copolymer that can be eliminated thermally for enhanced photochemical stability and advantages in terms of processing (solubility/insolubility switching...

  1. Effect of Hf underlayer on structure and magnetic properties of rapid thermal annealed FePt thin films

    International Nuclear Information System (INIS)

    Shen, C.Y.; Yuan, F.T.; Chang, H.W.; Lin, M.C.; Su, C.C.; Chang, S.T.; Wang, C.R.; Mei, J.K.; Hsiao, S.N.; Chen, C.C.; Shih, C.W.; Chang, W.C.

    2014-01-01

    FePt(20 nm) and FePt(20 nm)/Hf(10 nm) thin films prepared on the glass substrates by sputtering and post annealing are studied. For both samples, the as deposited films are disordered and L1 0 -ordering is triggered by a 400 °C-annealing. At T a ≥600 °C, Hf–Pt intermetallic compound forms with increasing T a , which consumes Pt in FePt layer and results in the formation of Fe 3 Pt phase. The film becomes soft magnetic at T a =800 °C. The optimized condition of FePt/Hf film is in the T a range of 500 to 600 °C where the interdiffusion between Hf and FePt layer is not extensive. The value of H c is 8.9 kOe and M r is 650–670 emu/cm 3 . Unlike FePt films, the Hf-undelayered samples show significantly reduced out-of-plane remanent and coercivity. The values for both are around 50% smaller than that of the FePt films. Additionally, Hf underlayer markedly reduces the FePt grain size and narrows the distribution, which enhances magnetic intergrain coupling. Good in-plane magnetic properties are preferred for the uses like a hard biasing magnet in a spintronic device. - Highlights: • Effect of Hf underlayer on structure and magnetic properties of FePt films are studied. • Hf underlayer reduces size, narrows the distribution of grains and thus enhances intergrain coupling. • Higher T a ≥600 °C makes Hf–Pt intermetallic compound and thus Fe 3 Pt phase form. • Good in-plane magnetic property is proper for uses in hard biasing magnet in spintronic devices

  2. Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Rose, Franck, E-mail: franck.rose@hgst.com; Wang, Na; Smith, Robert; Xiao, Qi-Fan; Dai, Qing; Marchon, Bruno [HGST, A Western Digital Company, San Jose Research Center, 3403, Yerba Buena Rd, San Jose, California 95135 (United States); Inaba, Hiroshi; Matsumura, Toru; Saito, Yoko; Matsumoto, Hiroyuki [HGST, A Western Digital Company, Japan Research Laboratory, 2880 Kozu, Odawara, Kanagawa 256-8510 (Japan); Mangolini, Filippo [Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States); Carpick, Robert W. [Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6315 (United States)

    2014-09-28

    We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamond-like carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 °C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp³ fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp² clustering rather than hydrogen diffusion in the film.

  3. Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

    International Nuclear Information System (INIS)

    Rose, Franck; Wang, Na; Smith, Robert; Xiao, Qi-Fan; Dai, Qing; Marchon, Bruno; Inaba, Hiroshi; Matsumura, Toru; Saito, Yoko; Matsumoto, Hiroyuki; Mangolini, Filippo; Carpick, Robert W.

    2014-01-01

    We have demonstrated that multi-wavelength Raman and photoluminescence spectroscopies are sufficient to completely characterize the structural properties of ultra-thin hydrogenated diamond-like carbon (DLC:H) films subjected to rapid thermal annealing (RTA, 1 s up to 659 °C) and to resolve the structural differences between films grown by plasma-enhanced chemical vapor deposition, facing target sputtering and filtered cathodic vacuum arc with minute variations in values of mass density, hydrogen content, and sp 3 fraction. In order to distinguish unequivocally between films prepared with different density, thickness, and RTA treatment, a new method for analysis of Raman spectra was invented. This newly developed analysis method consisted of plotting the position of the Raman G band of carbon versus its full width at half maximum. Moreover, we studied the passivation of non-radiative recombination centers during RTA by performing measurements of the increase in photoluminescence in conjunction with the analysis of DLC:H networks simulated by molecular dynamics. The results show that dangling bond passivation is primarily a consequence of thermally-induced sp 2 clustering rather than hydrogen diffusion in the film.

  4. Fabrication of a Cu(InGaSe2 Thin Film Photovoltaic Absorber by Rapid Thermal Annealing of CuGa/In Precursors Coated with a Se Layer

    Directory of Open Access Journals (Sweden)

    Chun-Yao Hsu

    2013-01-01

    Full Text Available Cu(InGaSe2 (CIGS thin film absorbers are prepared using sputtering and selenization processes. The CuGa/In precursors are selenized during rapid thermal annealing (RTA, by the deposition of a Se layer on them. This work investigates the effect of the Cu content in precursors on the structural and electrical properties of the absorber. Using X-ray diffraction, field emission scanning electron microscopy, Raman spectroscopy, and Hall effect measurement, it is found that the CIGS thin films produced exhibit facetted grains and a single chalcopyrite phase with a preferred orientation along the (1 1 2 plane. A Cu-poor precursor with a Cu/( ratio of 0.75 demonstrates a higher resistance, due to an increase in the grain boundary scattering and a reduced carrier lifetime. A Cu-rich precursor with a Cu/( ratio of 1.15 exhibits an inappropriate second phase ( in the absorber. However, the precursor with a Cu/( ratio of 0.95 exhibits larger grains and lower resistance, which is suitable for its application to solar cells. The deposition of this precursor on Mo-coated soda lime glass substrate and further RTA causes the formation of a MoSe2 layer at the interface of the Mo and CIGS.

  5. ZnO nanorod arrays prepared by chemical bath deposition combined with rapid thermal annealing: structural, photoluminescence and field emission characteristics

    International Nuclear Information System (INIS)

    Chen, Hung-Wei; He, Hsin-Min; Lee, Yi-Mu; Yang, Hsi-Wen

    2016-01-01

    ZnO nanorod arrays were prepared by low temperature chemical bath deposition (CBD) combined with rapid thermal annealing (RTA) under different ambient conditions. The structure and morphology of the synthesized ZnO have been characterized by field-emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). The obtained ZnO samples are highly crystalline with a hexagonal wurtzite phase and also display well-aligned array structure. A pronounced effect on increased nanorod length was found for the RTA-treated ZnO as compared to the as-grown ZnO. Analysis of XRD indicates that the (0 0 2) feature peak of the as-grown ZnO was shifted towards a lower angle as compared to the peaks of RTA-treated ZnO samples due to the reduction of tensile strain along the c-axis by RTA. Photoluminescence (PL) studies reveal that the ZnO nanorod arrays receiving RTA in an O 2 environment have the sharpest UV emission band and greatest intensity ratio of near band-edge emission (NBE) to deep level emission (DLE). Additionally, the effects of RTA on the field emission properties were evaluated. The results demonstrate that RTA an O 2 environment can lower the turn-on field and improve the field enhancement factor. The stability of the field emission current was also tested for 4 h. (paper)

  6. Influence of the substrate and nitrogen amount on the microstructural and optical properties of thin r.f.-sputtered ZnO films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Nicolescu, Madalina [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Anastasescu, Mihai, E-mail: manastasescu@icf.ro [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Preda, S.; Stroescu, H.; Stoica, M. [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania); Teodorescu, V.S. [National Institute of Material Physics, 105 bis Atomistilor Street, 077125 Bucharest-Magurele (Romania); Aperathitis, E.; Kampylafka, V. [FORTH-IESL, Crete (Greece); Modreanu, M. [Tyndall National Institute, University College Cork, Cork (Ireland); Zaharescu, M.; Gartner, M. [Institute of Physical Chemistry, Romanian Academy, Spl. Independentei 202, 060021 Bucharest (Romania)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer ZnO:N films are crystallized in hexagonal wurtzite phase (XRD), (0 0 2) oriented. Black-Right-Pointing-Pointer The presence of the Nitrogen in the RTA films is confirmed by EDX and XPS. Black-Right-Pointing-Pointer All ZnO:N films are highly transparent (over 80%) in VIS to NIR spectral range. Black-Right-Pointing-Pointer The frequency of the phonon modes, E{sub 1}(TO) and A{sub 1}(LO), were obtained by IRSE. - Abstract: N-doped ZnO (ZnO:N) thin films, intended to be used as one of the layers in solar cell applications were deposited by r.f. sputtering, using ZnN target (99.9% purity), on silicon and fused silica substrates. In the gas flow composition, Ar was kept constant (50%) and the O{sub 2}/N{sub 2} ratio was varied as: 40%/10%, 25%/25% and 10%/40%. After deposition, rapid thermal annealing (RTA) at 400 and 550 Degree-Sign C for 1 min in N{sub 2} ambient has been performed. The RTA impact on the optical and microstructural properties of ZnO:N thin films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) coupled with selected area electron diffraction (SAED) and energy dispersive X-ray spectroscopy (EDX), UV-vis-NIR spectroscopy, UV-vis-NIR spectroscopic ellipsometry (SE) and infrared ellipsometry (IR-SE). The as-deposited (ad) ZnO:N films are polycrystalline with preferentially oriented columnar crystals. After RTA we found ZnO:N films with improved crystallinity and fewer boundary defects. We report optical constants of ZnO:N from UV to IR spectral range as well as the infrared active phononic modes.

  7. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  8. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  9. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP

    International Nuclear Information System (INIS)

    Martil, I.; Prado, A. del; San Andres, E.; Gonzalez Diaz, G.; Martinez, F.L.

    2003-01-01

    We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing

  10. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    International Nuclear Information System (INIS)

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  11. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  12. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

    International Nuclear Information System (INIS)

    Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou

    2016-01-01

    Graphical abstract: - Highlights: • Studies of RTA temperatures on La doped ZrO2 atomic layer deposited on 4HSiC. • Oxygen vacancies improved insulating and catalytic properties of La doped ZrO2. • 700 °C annealed sample showed the highest EB, k value, and sensitivity on O2. • La doped ZrO2 was proposed as a potential metal reactive oxide on 4H-SiC. - Abstract: Effects of rapid thermal annealing at different temperatures (700–900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO_2) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO_2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr−O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current–time (I–t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO_2 signified the potential of the doped ZrO_2 as a metal reactive oxide on 4H-SiC substrate.

  13. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  14. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  15. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  16. Response of neutron-irradiated RPV steels to thermal annealing

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

  17. Significant improvement in the thermal annealing process of optical resonators

    Science.gov (United States)

    Salzenstein, Patrice; Zarubin, Mikhail

    2017-05-01

    Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

  18. Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

    Science.gov (United States)

    Liu, S. G.; Narayan, S. Y.

    1984-11-01

    We report the use of tungsten-halogen lamps for rapid (-10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activated implants in GaAs with good mobility and surface morphology. Typical mobilities were 3700 4500 cm2/V-s for n-layers with about 2×1017cm-3 carrier concentration and 50 150 cm2/v-s for 0.1 5xl019 cm-3 doped p-layers. Rapid thermal annealing was performed in a vertical quartz tube where different gases (N2, AsH3/H2, AsH3/Ar) can be introduced. Samples were encapsulated with SiO when N2 was used. Tungsten-halogen lamps of 600 or 1000 W were utilized for annealing GaAs wafers ranging from 1 to 10 cm2 in area and 0.025 to 0.040 cm in thickness. The transient temperature at the wafer position was monitored using a fine thermocouple. We carried out experiments for energies of 30 to 200 keV, doses of 2×1012 to 1×1015 cm-2, and peak temperatures ranging from 600 to 1000‡C. Most results quoted are in the 700 to 870‡C temperature range. Data on implant conditions, optimum anneal conditions, electrical characteristics, carrier concentration profiles, and atomic profiles of the implanted layers are described.

  19. Rapid thermal processing and beyond applications in semiconductor processing

    CERN Document Server

    Lerch, W

    2008-01-01

    Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

  20. Reduction of thermal quenching of biotite mineral due to annealing

    International Nuclear Information System (INIS)

    Kalita, J.M.; Wary, G.

    2014-01-01

    Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

  1. Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

    Science.gov (United States)

    Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

    2015-03-01

    In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

  2. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

  3. Thermal annealing studies in muscovite and in quartz

    International Nuclear Information System (INIS)

    Roberts, J.H.; Gold, R.; Ruddy, F.H.

    1979-06-01

    In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

  4. Far-infrared spectroscopy of thermally annealed tungsten silicide films

    International Nuclear Information System (INIS)

    Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

    1991-01-01

    The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

  5. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  6. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  7. Structural evolution of tunneling oxide passivating contact upon thermal annealing.

    Science.gov (United States)

    Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

    2017-10-16

    We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

  8. Thermal annealing of an embrittled reactor pressure vessel

    International Nuclear Information System (INIS)

    Mager, T.R.; Dragunov, Y.G.; Leitz, C.

    1998-01-01

    As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

  9. Cyclic Solvent Vapor Annealing for Rapid, Robust Vertical Orientation of Features in BCP Thin Films

    Science.gov (United States)

    Paradiso, Sean; Delaney, Kris; Fredrickson, Glenn

    2015-03-01

    Methods for reliably controlling block copolymer self assembly have seen much attention over the past decade as new applications for nanostructured thin films emerge in the fields of nanopatterning and lithography. While solvent assisted annealing techniques are established as flexible and simple methods for achieving long range order, solvent annealing alone exhibits a very weak thermodynamic driving force for vertically orienting domains with respect to the free surface. To address the desire for oriented features, we have investigated a cyclic solvent vapor annealing (CSVA) approach that combines the mobility benefits of solvent annealing with selective stress experienced by structures oriented parallel to the free surface as the film is repeatedly swollen with solvent and dried. Using dynamical self-consistent field theory (DSCFT) calculations, we establish the conditions under which the method significantly outperforms both static and cyclic thermal annealing and implicate the orientation selection as a consequence of the swelling/deswelling process. Our results suggest that CSVA may prove to be a potent method for the rapid formation of highly ordered, vertically oriented features in block copolymer thin films.

  10. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  11. In-place thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1985-04-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  12. Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

    DEFF Research Database (Denmark)

    Zeng, Wei; Shen, Yao; Zhang, Ning

    2012-01-01

    Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...... source-limited hardening” mechanism. However, the hardening kinetics was substantially faster for the electric pulse annealed material. Detailed microstructural characterization suggested that the rapid hardening during electric pulse annealing is related to an enhanced rate of recovery of dislocation...

  13. Rapid thermal processing by stamping

    Science.gov (United States)

    Stradins, Pauls; Wang, Qi

    2013-03-05

    A rapid thermal processing device and methods are provided for thermal processing of samples such as semiconductor wafers. The device has components including a stamp (35) having a stamping surface and a heater or cooler (40) to bring it to a selected processing temperature, a sample holder (20) for holding a sample (10) in position for intimate contact with the stamping surface; and positioning components (25) for moving the stamping surface and the stamp (35) in and away from intimate, substantially non-pressured contact. Methods for using and making such devices are also provided. These devices and methods allow inexpensive, efficient, easily controllable thermal processing.

  14. Furnace for rapid thermal processing

    NARCIS (Netherlands)

    Roozeboom, F.; Duine, P.A.; Sluis, P. van der

    2001-01-01

    A Method (1) for Rapid Thermal Processing of a wafer (7), wherein the wafer (7) is heated by lamps (9), and the heat radiation is reflected by an optical switching device (15,17) which is in the reflecting state during the heating stage. During the cooling stage of the wafer (7), the heat is

  15. Rapid thermal processing of semiconductors

    CERN Document Server

    Borisenko, Victor E

    1997-01-01

    Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions They thoroughly cover the work of international investigators in the field

  16. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  17. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric

    2010-08-18

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric; Mondal, Rajib; Bettinger, Christopher J.; Sok, Seihout; Toney, Michael F.; Bao, Zhenan

    2010-01-01

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

    International Nuclear Information System (INIS)

    Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

    1996-01-01

    Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

  20. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500°C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H.

  1. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C., E-mail: Paul.Dastoor@newcastle.edu.au [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Feron, Krishna [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); CSIRO Energy Technology, P. O. Box 330, Newcastle NSW 2300 (Australia)

    2014-05-12

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.

  2. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Pankaj; Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C.; Feron, Krishna

    2014-01-01

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and P3HT:indene-C 60 bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles

  3. Recovery of the irradiated JFETs by thermal annealing

    International Nuclear Information System (INIS)

    Assaf, J.

    2007-10-01

    Study about the recovering of irradiated JFET transistors has been reported. The JFETs were damaged totally or partially by exposition to Gamma ray and neutrons. Electronics noise has used to evaluate the effect of radiation and the recovery. The study focused on the recovery by thermal annealing, where samples have been heated gradually until 140 centigrade degree (410 K). The recovery ratio given by this method was higher than that resulted from the relaxation method (time recovery) carried out in the room temperature (300 K), especially for Gamma irradiated samples.(author)

  4. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Beirau, Tobias; Mihailova, Boriana; Groat, Lee A.; Chudy, Thomas; Shelyug, Anna; Navrotsky, Alexandra; Ewing, Rodney C.; Schlüter, Jochen; Škoda, Radek; Bismayer, Ulrich

    2017-01-01

    Abstract

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400–1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1·10

  5. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  6. Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

    International Nuclear Information System (INIS)

    Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

    2012-01-01

    The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

  7. Single wafer rapid thermal multiprocessing

    International Nuclear Information System (INIS)

    Saraswat, K.C.; Moslehi, M.M.; Grossman, D.D.; Wood, S.; Wright, P.; Booth, L.

    1989-01-01

    Future success in microelectronics will demand rapid innovation, rapid product introduction and ability to react to a change in technological and business climate quickly. These technological advances in integrated electronics will require development of flexible manufacturing technology for VLSI systems. However, the current approach of establishing factories for mass manufacturing of chips at a cost of more than 200 million dollars is detrimental to flexible manufacturing. The authors propose concepts of a micro factory which may be characterized by more economical small scale production, higher flexibility to accommodate many products on several processes, and faster turnaround and learning. In-situ multiprocessing equipment where several process steps can be done in sequence may be a key ingredient in this approach. For this environment to be flexible, the equipment must have ability to change processing environment, requiring extensive in-situ measurements and real time control. This paper describes the development of a novel single wafer rapid thermal multiprocessing (RTM) reactor for next generation flexible VLSI manufacturing. This reactor will combine lamp heating, remote microwave plasma and photo processing in a single cold-wall chamber, with applications for multilayer in-situ growth and deposition of dielectrics, semiconductors and metals

  8. High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

    Science.gov (United States)

    Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

    2018-08-15

    Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

  9. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  10. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Directory of Open Access Journals (Sweden)

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  11. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Science.gov (United States)

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  12. Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

    Energy Technology Data Exchange (ETDEWEB)

    Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

    1975-01-01

    The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

  13. Rapid pulse annealing of CdZnTe detectors for reducing electronic noise

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nelson, Art; Nikolic, Rebecca J.; Payne, Stephen A.; Swanberg, Jr., Erik Lars

    2018-05-01

    A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of .about.0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.

  14. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Science.gov (United States)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  15. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  16. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

    2017-03-01

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

  17. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  18. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  19. Thermal annealing of recoil 56Mn in strontium permanganate under (n,γ) process

    International Nuclear Information System (INIS)

    Mishra, Shuddhodan P.; Vijaya

    2002-01-01

    Chemical stabilization of recoil 56 Mn in strontium permanganate (hydrous and anhydrous) has been investigated with a special reference to pre-and post-activation thermal annealing treatments. The retention of 56 Mn in neutron irradiated strontium permanganate showed significant variation on thermal annealing in both pre-and post-activation heated target. The recoil re-entry process obeys simple first order kinetics and the activation energy deduced for thermal annealing process is very low as computed by classical Arrhenius plots. The results observed are discussed in the light of existing ideas for understanding the recoil stabilization mechanism of parent reformation and the nature of precursors in permanganates. (author)

  20. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  1. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  2. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  3. Composition dependent thermal annealing behaviour of ion tracks in apatite

    Energy Technology Data Exchange (ETDEWEB)

    Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

    2016-07-15

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  4. Hard magnetic properties of rapidly annealed NdFeB thin films on Nb and V buffer layers

    International Nuclear Information System (INIS)

    Jiang, H.; Evans, J.; O'Shea, M.J.; Du Jianhua

    2001-01-01

    NdFeB thin films of the form A (20 nm)/NdFeB(d nm)/A(20 nm), where d ranges from 54 to 540 nm and the buffer layer A is Nb or V were prepared on a Si(1 0 0) substrate by magnetron sputtering. The hard Nd 2 Fe 14 B phase is formed by a 30 s rapid anneal or a 20 min anneal. Average crystallite size ranged from 20 to 35 nm with the rapidly annealed samples having the smaller crystallite size. These samples also exhibited a larger coercivity and energy product than those treated by a 20 min vacuum anneal. A maximum coercivity of 26.3 kOe at room temperature was obtained for a Nb/NdFeB (180 nm)/Nb film after a rapid anneal at 725 deg. C. Initial magnetization curves indicate magnetization rotation rather than nucleation of reverse domains is important in the magnetization process. A Brown's equation analysis of the coercivity as a function of temperature allowed us to compare the rapidly annealed and 20 min annealed samples. This analysis suggests that rapid annealing gives higher quality crystalline grains than the 20 min annealed sample leading to the observed large coercivity in the rapidly annealed samples

  5. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    International Nuclear Information System (INIS)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-01-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10 26 m −2 ) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min −1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h

  6. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Science.gov (United States)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-08-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  7. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hara, Masanori [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Otsuka, Teppei [Kyushu University, Interdisciplinary Graduate School of Engineering Science, Higashi-ku, Fukuoka (Japan); Oya, Yasuhisa [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

    2015-08-15

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10{sup 26} m{sup −2}) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min{sup −1} up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  8. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    Science.gov (United States)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  9. Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

    Science.gov (United States)

    Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

    2018-01-22

    The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

  10. Rapid Annealing of Iron Implanted Hg(1-x)Cd(x)Te

    Science.gov (United States)

    1990-03-01

    Alnrroveii rFoi’ PubikI Release; distributin tilIntl ted DTICELECTEJUN 12 IMU’ BEest Available Cop, D i ..:6 (J,•, 4iL& , AD Rapid Annealing of Ion...Recently, we have received from Or.J. Dinan of the Night Vision and Electro-optic Army Labs at Fort Belvoir a few electrically uncharacterized Hg

  11. Thermal annealing of gamma irradiated ammonium chloride (Preprint no. RC-37)

    International Nuclear Information System (INIS)

    Kalkar, C.D.; Lala, Neeta

    1991-01-01

    Ammonium chloride produces N 2 H 4 + and Cl 2 as the main radiolytic products on gamma irradiation. Thermal annealing has a marked effect on the stability of N 2 H 4 + and Cl 2 . During the thermal annealing the chemical yield of nitrite and iodine was studied by dissolving irradiated ammonium chloride in aqueous sodium nitrate and potassium iodide respectively. The yield of iodine in isochronal annealing showed an exponential behaviour with temperature while that of nitrite showed a decrease and then increases at higher temperatures. The results are explained on the basis of dissociation and recombination of N 2 H 4 + with temperature. (author). 3 refs., 2 figs

  12. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.; Sukmawati, H. [Chemical Engineering, Faculty of Engineering, Diponegoro University Prof. Soedarto Street, Tembalang, Semarang, 50239, Phone/Fax : (024)7460058 (Indonesia)

    2015-12-29

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.

  13. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    International Nuclear Information System (INIS)

    Kusworo, T. D.; Aryanti, N.; Firdaus, M. M. H.; Sukmawati, H.

    2015-01-01

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second

  14. An assessment of the economic consequences of thermal annealing of a nuclear reactor pressure vessel

    International Nuclear Information System (INIS)

    Griesbach, T.J.; Server, W.L.

    1991-01-01

    The use of a thermal heat treatment to recover mechanical properties which were degraded by neutron radiation exposure is a potential method for assuring reactor pressure vessel licensing life and possible license renewal. 'Wet anneals' at temperatures less than 343degC have been conducted on test reactors in Alaska (SM-1A) and Belgium (BR3). The Soviets have also performed 'dry anneals' at higher temperatures near or above 450degC on several commercial reactor vessels. Technical and economic uncertainties have made utilities in the United States reluctant to seriously consider thermal annealing of large commercial reactor vessels except as a last resort option. However, as a utility begins to experience significant radiation embrittlement or considers extending the operating license life of the vessel, thermal annealing can be a viable option depending upon many considerations. These considerations include other possible remedial measures that can be taken (i.e., flux reduction), economic issues with regard to utility finances, and corporate philosophy. A decision analysis model has been developed to analyze the thermal anneal option in comparison to other alternatives for a number of possible combinations and timing. The results for a postulated vessel and embrittlement condition are presented to show that thermal annealing can be a viable management option which should be taken seriously. (author)

  15. Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

    International Nuclear Information System (INIS)

    Allen Hiser, J.R.

    1993-01-01

    In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on 'Format and Content of Application for Approval for Thermal Annealing of RPV' are also proposed

  16. Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

    Energy Technology Data Exchange (ETDEWEB)

    Allen Hiser, J R [UKAEA Harwell Lab. (United Kingdom). Engineering Div.

    1994-12-31

    In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on `Format and Content of Application for Approval for Thermal Annealing of RPV` are also proposed.

  17. Study of annealing effects in Al–Sb bilayer thin films

    Indian Academy of Sciences (India)

    There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

  18. High-density Bi-Pb-Sr-Ca-Cu-O superconductor prepared by rapid thermal melt processing

    Science.gov (United States)

    Moon, B. M.; Lalevic, B.; Kear, B. H.; McCandlish, L. E.; Safari, A.; Meskoob, M.

    1989-10-01

    A high quality, dense Bi-Pb-Sr-Ca-Cu-O superconductor has been successfully synthesized by rapid thermal melt processing. Conventionally sintered pellets were melted at 1200 °C, cooled rapidly, and then annealed. As-melted samples exhibited semiconductor behavior, which upon annealing became superconducting at 115 K [Tc(zero)=105 K]. A detailed study of various processing techniques has been carried out.

  19. Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

    International Nuclear Information System (INIS)

    Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

    2002-01-01

    The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

  20. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei, E-mail: sei-uemura@aist.go.jp [Flexible Electronics Research Center (FLEC), National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)

    2015-06-15

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10{sup 8} and a field-effect mobility of 0.3 cm{sup 2} V{sup −1} s{sup −1}. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  1. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    International Nuclear Information System (INIS)

    Cheong, Heajeong; Ogura, Shintaro; Ushijima, Hirobumi; Yoshida, Manabu; Fukuda, Nobuko; Uemura, Sei

    2015-01-01

    We fabricated solution-processed indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) by microwave (MW) annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV) light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 10 8 and a field-effect mobility of 0.3 cm 2  V −1  s −1 . These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs

  2. Characterization of tungsten silicides formed by rapid thermal annealing

    International Nuclear Information System (INIS)

    Siegal, M.; Santiago, J.J.; VanDerSpiegel, J.

    1986-01-01

    Tungsten silicide samples were formed by sputter depositing 80 nm W metal onto (100) oriented, 5 ohm-cm Si wafers. After deposition, the samples were fast radiatively processed in an RTA system using quartz-halogen tungsten lamps as radiation sources for time intervals ranging from 20 to 60s under high vacuum. Films processed at 22-25 W/cm 2 radiation with the film side of the samples oriented away from the lamps result in films which are metallic or cloudy in color, and have mixed composition as evidenced by x-ray diffraction (W, W 5 Si 3 and WSi 2 ). Films processed with the film side oriented toward the lamps show the occurrence of a phase transformation clearly nucleated at the film edge

  3. Review of in-service thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1984-01-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper-shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. A test reactor pressure vessel has been wet annealed at less than 343 0 C (650 0 F), and annealing of the Belgian BR-3 reactor vessel has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place is feasible, but solvable engineering problems do exist. The materials with highest radiation sensitivity in the older reactor vessels are submerged-arc weld metals with high copper and nickel concentrations. The limited Charpy V-notch and fracture toughness data available for five such welds were reviewed. The review suggested that significant recovery results from annealing at 454 0 C (850 0 F) for one week. Two of the main concerns with a localized heat treatment at 454 0 C (850 0 F) are the degree of distortion that may occur after the annealing cycle and the extent of residual stresses. A thermal and structural analysis of a reactor vessel for distortions and residual stresses found no problems with the reactor vessel itself but did indicate a rotation at the nozzle region of the vessel that would plastically deform the attached primary piping. Further analytical studies are needed. An American Society for Testing and Materials (ASTM) task group is upgrading and revising the ASTM Recommended Guide for In-Service Annealing of WaterCooled Nuclear Reactor Vessels (E 509-74) with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (for example, the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  4. Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

    Science.gov (United States)

    Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

    2017-01-01

    Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

  5. Development of a supplemental surveillance program for reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Server, W.L.; Rosinski, S.T.

    1997-01-01

    The technical decision to thermally anneal a nuclear reactor pressure vessel (RPV) depends upon the level of embrittlement in the RPV steels, the amount of recovery of fracture toughness properties expected from the anneal, and the rate of re-embrittlement after the vessel is placed back into service. The recovery of Charpy impact toughness properties after annealing can be estimated initially by using a recovery model developed using experimental measurements of recovery (such as that developed by Eason et al. for U.S. vessel materials). However, actual validation measurements on plant-specific archived vessel materials (hopefully in the existing surveillance program) are needed; otherwise, irradiated surrogate materials, essentially the same as the RPV steels or bounding in expected behavior, must be utilized. The efficient use of any of these materials requires a supplemental surveillance program focused at both recovery and reirradiation embrittlement. Reconstituted Charpy specimens and new surveillance capsules will most likely be needed as part of this supplemental surveillance program. A new version of ASTM E 509 has recently been approved which provides guidance on thermal annealing in general and specifically for the development of an annealing supplemental surveillance program. The post-anneal re-embrittlement properties are crucial for continued plant operation, and the use of a re-embrittlement model, such as the lateral shift approach, may be overly conservative. This paper illustrates the new ASTM E 509 Standard Guide methodology for an annealing supplemental surveillance program. As an example, the proposed program for the Palisades RPV beltline steels is presented which covers the time from annealing to the end of operating license and beyond, if license renewal is pursued. The Palisades nuclear power plant RPV was planned to be annealed in 1998, but that plant is currently being re-evaluated. The proposed anneal was planned to be conducted at a

  6. Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

    Science.gov (United States)

    Lofthouse-Smith, D.-D.; Soman, M. R.; Allanwood, E. A. H.; Stefanov, K. D.; Holland, A. D.; Leese, M.; Turne, P.

    2018-03-01

    ESA's JUICE (JUpiter ICy moon Explorer) spacecraft is an L-class mission destined for the Jovian system in 2030. Its primary goals are to investigate the conditions for planetary formation and the emergence of life, and how does the solar system work. The JANUS camera, an instrument on JUICE, uses a 4T back illuminated CMOS image sensor, the CIS115 designed by Teledyne e2v. JANUS imager test campaigns are studying the CIS115 following exposure to gammas, protons, electrons and heavy ions, simulating the harsh radiation environment present in the Jovian system. The degradation of 4T CMOS device performance following proton fluences is being studied, as well as the effectiveness of thermal annealing to reverse radiation damage. One key parameter for the JANUS mission is the Dark current of the CIS115, which has been shown to degrade in previous radiation campaigns. A thermal anneal of the CIS115 has been used to accelerate any annealing following the irradiation as well as to study the evolution of any performance characteristics. CIS115s have been irradiated to double the expected End of Life (EOL) levels for displacement damage radiation (2×1010 protons, 10 MeV equivalent). Following this, devices have undergone a thermal anneal cycle at 100oC for 168 hours to reveal the extent to which CIS115 recovers pre-irradiation performance. Dark current activation energy analysis following proton fluence gives information on trap species present in the device and how effective anneal is at removing these trap species. Thermal anneal shows no quantifiable change in the activation energy of the dark current following irradiation.

  7. Rapid thermal conditioning of sewage sludge

    Science.gov (United States)

    Zheng, Jianhong

    Rapid thermal conditioning (RTC) is a developing technology recently applied to sewage sludge treatment. Sludge is heated rapidly to a reaction temperature (up to about 220sp°C) under sufficient pressure to maintain the liquid phase. Reaction is quenched after 10 to 30 seconds when the mixture of sludge and steam pass through a pressure let-down valve. This process reduces the amount of sludge requiring land disposal, eliminates the need for polymer coagulant, improves dewaterability, increases methane production, and further reduces the concentration of pathogens. The odor problem associated with traditional thermal conditioning processes is largely minimized. Ammonia removal is readily integrated with the process. For this research, a pilot unit was constructed capable of processing 90 liters of sludge per hour. Over 22 runs were made with this unit using sludge from New York City Water Pollution Control Plants (WPCP). Sludges processed in this equipment were tested to determine the effect of RTC operating conditions on sludge dewaterability, biodegradability, and other factors affecting the incorporation of RTC into wastewater treatment plants. Dewaterability of thermally conditioned sludge was assessed for cetrifugeability and filterability. Bench scale centrifugation was used for evaluating centrifugeability, pressure filtration and capillary suction time (CST) for filterability. A mathematical model developed for centrifuge dewatering was used to predict the effect of RTC on full scale centrifuge performance. Particle size distribution and solids density of raw and treated PDS were also analyzed. An observed increase in sludge solids density at least partially explains its improved centrifugeability. An investigation of thermally conditioned amino acids showed that the L-isomer is highly biodegradable while the D-isomers are generally less so. Glucose is highly biodegradable, but rapidly becomes refractory as thermal conditioning time is lengthened. This

  8. Effect of thermal annealing on optical properties of implanted GaAs

    NARCIS (Netherlands)

    Kulik, M; Komarov, FF; Maczka, D

    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

  9. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  10. Magnetic structure of Fe-based amorphous and thermal annealed microwires

    International Nuclear Information System (INIS)

    Olivera, J.; Provencio, M.; Prida, V.M.; Hernando, B.; Santos, J.D.; Perez, M.J.; Gorria, P.; Sanchez, M.L.; Belzunce, F.J.

    2005-01-01

    The magnetic structure of amorphous and thermal annealed glass coated microwires is studied by thermomagnetic, DSC, and Bitter domain pattern techniques. The long-range dipolar interaction between parallel aligned microwires and the appearance of large Barkhausen jumps steps in the axially magnetized loops are discussed in terms of reversal magnetization process

  11. A novel method for biopolymer surface nanostructuring by platinum deposition and subsequent thermal annealing

    Czech Academy of Sciences Publication Activity Database

    Slepička, P.; Juřík, P.; Kolská, Z.; Malinský, Petr; Macková, Anna; Michaljaničová, I.; Švorčík, V.

    2012-01-01

    Roč. 7, č. 671 (2012), s. 1-6 ISSN 1931-7573 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : nanopattering * surface morphology * biopolymer * platinum sputtering * thermal annealing Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.524, year: 2012

  12. Methods and compositions for rapid thermal cycling

    Energy Technology Data Exchange (ETDEWEB)

    Beer, Neil Reginald; Benett, William J.; Frank, James M.; Deotte, Joshua R.; Spadaccini, Christopher

    2018-04-10

    The rapid thermal cycling of a material is targeted. A microfluidic heat exchanger with an internal porous medium is coupled to tanks containing cold fluid and hot fluid. Fluid flows alternately from the cold tank and the hot tank into the porous medium, cooling and heating samples contained in the microfluidic heat exchanger's sample wells. A valve may be coupled to the tanks and a pump, and switching the position of the valve may switch the source and direction of fluid flowing through the porous medium. A controller may control the switching of valve positions based on the temperature of the samples and determined temperature thresholds. A sample tray for containing samples to be thermally cycled may be used in conjunction with the thermal cycling system. A surface or internal electrical heater may aid in heating the samples, or may replace the necessity for the hot tank.

  13. Thermal design and analysis of the HTGR fuel element vertical carbonizing and annealing furnace

    International Nuclear Information System (INIS)

    Llewellyn, G.H.

    1977-06-01

    Computer analyses of the thermal design for the proposed HTGR fuel element vertical carbonizing and annealing furnace were performed to verify its capability and to determine the required power input and distribution. Although the furnace is designed for continuous operation, steady-state temperature distributions were obtained by assuming internal heat generation in the fuel elements to simulate their mass movement. The furnace thermal design, the analysis methods, and the results are discussed herein

  14. Effect of thermal annealing on property changes of neutron-irradiated non-graphitized carbon materials and nuclear graphite

    International Nuclear Information System (INIS)

    Matsuo, Hideto

    1991-06-01

    Changes in dimension of non-graphitized carbon materials and nuclear graphite, and the bulk density, electrical resistivity, Young's modulus and thermal expansivity of nuclear graphite were studied after neutron irradiation at 1128-1483 K and the successive thermal annealing up to 2573 K. Carbon materials showed larger and anisotropic dimensional shrinkage than that of nuclear graphite after the irradiation. The irradiation-induced dimensional shrinkage of carbon materials decreased during annealing at temperatures from 1773 to 2023 K, followed by a slight increase at higher temperatures. On the other hand, the irradiated nuclear graphite hardly showed the changes in length, density and thermal expansivity under the thermal annealing, but the electrical resistivity and Young's modulus showed a gradual decrease with annealing temperature. It has been clarified that there exists significant difference in the effect of thermal annealing on irradiation-induced dimensional shrinkage between graphitized nuclear graphite and non-graphitized carbon materials. (author)

  15. Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-11-01

    The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

  16. Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

    Science.gov (United States)

    Tarsoly, Gergely; Pyo, Seungmoon

    2018-06-01

    We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

  17. Characterization for Ceramic-coated magnets using E-beam and thermal annealing methods

    International Nuclear Information System (INIS)

    Kim, Hyug Jong; Kim, Hee Gyu; Kang, In Gu; Kim, Min Wan; Yang, Ki Ho; Lee, Byung Cheol; Choi, Byung Ho

    2009-01-01

    Hard magnet was usually used by coating SiO 2 ceramic thick films followed by the thermal annealing process. In this work, the alternative annealing process for NdFeB magnets using e-beam sources(1∼2 MeV, 50∼400 kGy) was investigated. NdFeB magnets was coated with ceramic thick films using the spray method. The optimal annealing parameter for e-beam source reveals to be 1 MeV and 300 kGy. The sample prepared at 1 MeV and 300 kGy was characterized by the analysis of the surface morphology, film hardness, adhesion and chemical stability. The mechanical property of thick film, especially film hardness, is better than that of thermal annealed samples at 180 .deg. C. As a result, e-beam annealing process will be one of candidate and attractive heat treatment process. In future, manufacturing process will be carried out in cooperation with the magnet company

  18. Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

    Science.gov (United States)

    Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

    2015-03-01

    We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

  19. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    Science.gov (United States)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  20. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  1. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  2. Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Conroy, Michele; Li, Haoning; Zubialevich, Vitaly Z.; Kusch, Gunnar; Schmidt, Michael; Collins, Timothy; Glynn, Colm; Martin, Robert W.; O’Dwyer, Colm; Morris, Michael D.; Holmes, Justin D.; Parbrook, Peter J.

    2016-12-07

    With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

  3. Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

    International Nuclear Information System (INIS)

    Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

    1989-01-01

    The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

  4. Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

  5. Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

    Directory of Open Access Journals (Sweden)

    Jang Bo Shim

    2011-01-01

    Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

  6. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    Science.gov (United States)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  7. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  8. Recent evaluation of 'wet' thermal annealing to resolve reactor pressure vessel embrittlement

    International Nuclear Information System (INIS)

    Server, W.L.; Biemiller, E.C.

    1993-01-01

    Prior to the decision to close the Yankee Rowe plant in 1992, a great deal of effort was expended in trying to resolve the degree of neutron embrittlement that the reactor pressure vessel had experienced after 30 years of operation. One mitigative measure that was examined in detail was the possibility of performing a relatively low temperature thermal anneal (at approximately 650 deg. F) to partially restore the original design level of mechanical properties of the reactor pressure vessel beltline region which were lost due to the neutron radiation exposure. This low temperature anneal was to involve heating of the primary coolant water using pump heat in a similar manner as that used to anneal the Belgian BR-3 reactor pressure vessel in the early 1980s. This 'wet' anneal was successful in recovering mechanical properties for the BR-3 vessel, but the extent of the recovery, as well as the rate of re-embrittlement after the anneal, were issues that were difficult to quantify since the exact reactor pressure vessel steels were not available for experimental verification. For the case of Yankee Rowe, material was available from past surveillance programs for at least one of the materials in the vessel, as well as materials obtained from various sources which could act as bounding surrogates. An irradiation /annealing/reirradiation program was developed to better quantify the degree of recovery and re-embrittlement for these materials, but this program was halted before significant test results were obtained. Prior to the initiation of the testing program, a review of past annealing data was performed and the data were scrutinized for direct relevance to the annealing response of the Yankee Rowe vessel. This paper discusses the results derived from this review. The results from the critical review of the past annealing data indicated that a 'wet' anneal of the Yankee Rowe vessel may have been successful in reducing the degree of embrittlement to the point that the

  9. Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing.

    Science.gov (United States)

    Figuerola, Albert; van Huis, Marijn; Zanella, Marco; Genovese, Alessandro; Marras, Sergio; Falqui, Andrea; Zandbergen, Henny W; Cingolani, Roberto; Manna, Liberato

    2010-08-11

    The thermal evolution of a collection of heterogeneous CdSe-Au nanosystems (Au-decorated CdSe nanorods, networks, vertical assemblies) prepared by wet-chemical approaches was monitored in situ in the transmission electron microscope. In contrast to interfaces that are formed during kinetically controlled wet chemical synthesis, heating under vacuum conditions results in distinct and well-defined CdSe/Au interfaces, located at the CdSe polar surfaces. The high quality of these interfaces should make the heterostructures more suitable for use in nanoscale electronic devices.

  10. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

  11. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Science.gov (United States)

    van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  12. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

    1999-01-02

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  13. Evolution of structural and magnetic properties of sputtered nanocrystalline Co thin films with thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Dileep; Gupta, Ajay

    2007-01-01

    Ultrafine grain films of cobalt prepared using ion-beam sputtering have been studied using X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM) and magneto-optical Kerr effect (MOKE) measurements. As-prepared films have very smooth surface owing to the ultrafine nature of the grains. Evolution of the structure and morphology of the film with thermal annealing has been studied and the same is correlated with the magnetic properties. Above an annealing temperature of 300 deg. C, the film gradually transforms from HCP to FCC phase that remains stable at room temperature. A significant contribution of the surface energy, due to small grain size, results in stabilisation of the FCC phase at room temperature. It is found that other processes like stress relaxation, grain texturing and growth also exhibit an enhanced rate above 300 deg. C, and may be associated with an enhanced mobility of the atoms above this temperature. Films possess a uniaxial anisotropy, which exhibits a non-monotonous behaviour with thermal annealing. The observed variation in the anisotropy and coercivity with annealing can be understood in terms of variations in the internal stresses, surface roughness, and grain structure

  14. Characterization and luminescent properties of thermally annealed olivines

    International Nuclear Information System (INIS)

    Colin-Garcia, Maria; Correcher, Virgilio; Garcia-Guinea, Javier; Heredia-Barbero, Alejandro; Roman-Lopez, Jesus; Ortega-Gutierrez, Fernando; Negron-Mendoza, Alicia; Ramos-Bernal, Sergio

    2013-01-01

    Olivine is an iron-magnesium solid solution silicate (Mg,Fe) 2 SiO 4 and it is probably one of the most abundant mineral phase in the Solar System, it is present in the primitive carbonaceous meteorites (i.e Allende), and in ordinary chondritic meteorite, comets or terrestrial planets. The olivine grains in those bodies have been exposed to different radiation sources like UV, electrons, cosmic radiation, etc. Here, we explore the effect of ionizing and non ionizing radiation on the luminescence emission of the two well-characterised olivine samples from Mexico and Spain by means of cathodoluminescence and thermoluminescence. The analyses by X-ray dispersive energies in the scanning electron microscopy show differences between the samples in the amount of iron and magnesium and also show traces of rare elements. Olivine exhibits spectral cathodoluminescence emissions of low intensity, explained for the quenching of the luminescence of the iron, and sharp signals assigned as impurities. Cathodoluminescence and thermoluminescence glow curves of the natural, and UV induced olivine samples were obtained. Our results show that thermal treatments at 1100 °C change the mineral molecular structure and the luminescence properties of this mineral phase. These results confirm an active participation of physical factors influencing the luminescent properties of olivine. -- Highlights: ► Luminescent properties of two olivines samples (Mexican and Spanish) were explored. ► EDS show different iron and magnesium content and traces of rare elements on both. ► Olivine exhibits spectral CL emissions of low intensity due to the quenching of iron. ► Treatments at 1100 °C change the mineral structure and its response to UV radiation

  15. Schottky barrier parameters and structural properties of rapidly annealed Zr Schottky electrode on p-type GaN

    Science.gov (United States)

    Rajagopal Reddy, V.; Asha, B.; Choi, Chel-Jong

    2017-06-01

    The Schottky barrier junction parameters and structural properties of Zr/p-GaN Schottky diode are explored at various annealing temperatures. Experimental analysis showed that the barrier height (BH) of the Zr/p-GaN Schottky diode increases with annealing at 400 °C (0.92 eV (I-V)/1.09 eV (C-V)) compared to the as-deposited one (0.83 eV (I-V)/0.93 eV (C-V)). However, the BH decreases after annealing at 500 °C. Also, at different annealing temperatures, the series resistance and BH are assessed by Cheung's functions and their values compared. Further, the interface state density (N SS) of the diode decreases after annealing at 400 °C and then somewhat rises upon annealing at 500 °C. Analysis reveals that the maximum BH is obtained at 400 °C, and thus the optimum annealing temperature is 400 °C for the diode. The XPS and XRD analysis revealed that the increase in BH may be attributed to the creation of Zr-N phases with increasing annealing up to 400 °C. The BH reduces for the diode annealed at 500 °C, which may be due to the formation of Ga-Zr phases at the junction. The AFM measurements reveal that the overall surface roughness of the Zr film is quite smooth during rapid annealing process. Project supported by the R&D Program for Industrial Core Technology (No. 10045216) and the Transfer Machine Specialized Lighting Core Technology Development Professional Manpower Training Project (No. N0001363) Funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea.

  16. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  17. The preliminary results of the thermal annealing processes performed on the RPVs NPP V-1 in Jaslovske Bohunice

    Energy Technology Data Exchange (ETDEWEB)

    Kupca, L; Brezina, M; Beno, P [Vyskumny Ustav Jadrovych Elektrarni, Trnava (Slovakia)

    1994-12-31

    Samples of weld and base metal above and below the weld were taken from RPV material in the V-230 type NPP V-1 in Bohunice; hardness measurements were carried out across the weld on the external surface of the RPV under the thermal shielding, before and after annealing. Results are presented and the annealing procedure efficiency is discussed. (authors). 13 refs., 5 figs.

  18. Effect of thermal annealing treatment with titanium chelate on buffer layer in inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhiyong [College of Science, Shenyang Agricultural University, Shenyang 110866 (China); Wang, Ning, E-mail: ning_wang@outlook.com [School of Electrical and Electronic and Engineering, Nanyang Technological University 639798 (Singapore); Fu, Yan, E-mail: 1060945062@qq.com [College of Science, Shenyang Agricultural University, Shenyang 110866 (China)

    2016-12-15

    Highlights: • The TIPD layer as electron extraction layer and instead of Ca or LiF. • Impact of the work function of TIPD layer by thermal annealing treatment. • Importance of TIPD layer as electron extraction layer for work function and potential barrier. - Abstract: The solution processable electron extraction layer (EEL) is crucial for polymer solar cells (PSCs). Here, we investigated titanium (diisopropoxide) bis(2,4-pentanedionate) (TIPD) as an EEL and fabricated inverted PSCs with a blend of poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) acting as the photoactive layer, with a structure of ITO/TIPD/P3HT:ICBA/MoO{sub 3}/Ag. After thermal annealing treatment at 150 °C for 15 min, the PSC performances increased from 3.85% to 6.84% and they achieve stable power conversion efficiency (PCE), with a similar PCE compared with TiO{sub 2} as an EEL by the vacuum evaporated method. Fourier transform infrared spectroscopy (FTIR) and ultraviolet photoelectron spectroscopy (UPS) confirmed that the TIPD decomposed and formed the Ti=O bond, and the energy level of the lowest unoccupied molecular orbital and the highest occupied molecular orbital increased. The space charge limited current (SCLC) measurements further confirmed the improvement in electron collection and the transport ability using TIPD as the EEL and thermal annealing.

  19. Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient

    International Nuclear Information System (INIS)

    Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen

    2010-01-01

    In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N 2 and O 2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi 2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N 2 ambient has smaller memory window and better retention characteristics than in O 2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.

  20. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P., E-mail: pmilani@mi.infn.it [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); Sogne, E. [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); European School of Molecular Medicine (SEMM), IFOM-IEO, Milano (Italy); Merlini, M. [Dipartimento di Scienze della Terra “Ardito Desio”, Università degli Studi di Milano, via Mangiagalli 32, 20133 Milano (Italy); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2016-08-07

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  1. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    International Nuclear Information System (INIS)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P.; Sogne, E.; Merlini, M.; Ducati, C.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  2. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.; Sogne, Elisa; Lenardi, C.; Podestà , A.; Merlini, M.; Ducati, C.; Milani, P.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  3. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.

    2016-08-05

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  4. Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 deg. C

    International Nuclear Information System (INIS)

    Bronsveld, P.C.P.; Wagt, H.J. van der; Rath, J.K.; Schropp, R.E.I.; Beyer, W.

    2007-01-01

    Post-deposition thermal annealing studies, including gas effusion measurements, measurements of infrared absorption versus annealing state, cross-sectional transmission electron microscopy (X-TEM) and atomic force microscopy (AFM), are used for structural characterization of hydrogenated amorphous and microcrystalline silicon films, prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low substrate temperature (T S ). Such films are of interest for application in thin semiconductor devices deposited on cheap plastics. For T S ∼ 40 deg. C, H-evolution shows rather complicated spectra for (near-) microcrystalline material, with hydrogen effusion maxima seen at ∼ 200-250 deg. C, 380 deg. C and ∼ 450-500 deg. C, while for the amorphous material typical spectra for good-quality dense material are found. Effusion experiments of implanted He demonstrate for the microcrystalline material the presence of a rather open (void-rich) structure. A similar tendency can be concluded from Ne effusion experiments. Fourier Transform infrared (FTIR) spectra of stepwise annealed samples show Si-H bond rupture already at annealing temperatures of 150 deg. C. Combined AFM/X-TEM studies reveal a columnar microstructure for all of these (near-) microcrystalline materials, of which the open structure is the most probable explanation of the shift of the H-effusion maximum in (near-) microcrystalline material to lower temperature

  5. Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

    2017-02-15

    Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

  6. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1996-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  7. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  8. Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, R. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg, 26111 Oldenburg (Germany); Kirilov, Kiril [Department of Solid State Physics and Microelectronics, Sofia Univ. (Bulgaria); Levi, Zelma; Manolov, E. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nedev, N. [Instituto de Ingenieria Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico (Mexico)

    2007-07-01

    Silicon nanocrystals embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 1000 C in N{sub 2} atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the {+-}12 V scanning range (E{sub ox}={+-}2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO{sub 2} interface and a smaller value of the fixed oxide charge close to this interface.

  9. Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

    International Nuclear Information System (INIS)

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

    2013-01-01

    The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

  10. Thermal Annealing Reduces Geminate Recombination in TQ1:N2200 All-Polymer Solar Cells

    KAUST Repository

    Karuthedath, Safakath

    2018-03-27

    A combination of steady-state and time-resolved spectroscopic measurements is used to investigate the photophysics of the all-polymer bulk heterojunction system TQ1:N2200. Upon thermal annealing a doubling of the external quantum efficiency and an improved fill factor (FF) is observed, resulting in an increase in the power conversion efficiency. Carrier extraction is similar for both blends, as demonstrated by time-resolved electric-field-induced second harmonic generation experiments in conjunction with transient photocurrent studies, spanning the ps-µs time range. Complementary transient absorption spectroscopy measurements reveal that the different quantum efficiencies originate from differences in charge carrier separation and recombination at the polymer-polymer interface: in as-spun samples ~35 % of the charges are bound in interfacial charge-transfer states and recombine geminately, while this pool is reduced to ~7 % in thermally-annealed sample, resulting in higher short-circuit currents. Time-delayed collection field experiments demonstrate a field-dependent charge generation process in as-spun samples, which reduces the FF. In contrast, field-dependence of charge generation is weak in annealed films. While both devices exhibit significant non-geminate recombination competing with charge extraction, causing low FFs, our results demonstrate that the donor/acceptor interface in all-polymer solar cells can be favourably altered to enhance charge separation, without compromising charge transport and extraction.

  11. A perspective on thermal annealing of reactor pressure vessel materials from the viewpoint of experimental results

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1996-01-01

    It is believed that in the next decade or so, several nuclear reactor pressure vessels (RPVs) may exceed the reference temperature limits set by the pressurized thermal shock screening criteria. One of the options to mitigate the effects of irradiation on RPVs is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory to study the annealing response, or ''recovery'' of several irradiated RPV steels. The fracture toughness is one of the important properties used in the evaluation of the integrity of RPVs. Optimally, the fracture toughness is measured directly by fracture toughness specimens, such as compact tension or precracked Charpy specimens, but is often inferred from the results of Charpy V-notch impact specimens. The experimental results are compared to the predictions of models for embrittlement recovery which have been developed by Eason et al. Some of the issues in annealing that still need to be resolved are discussed

  12. Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

  13. Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium

    Energy Technology Data Exchange (ETDEWEB)

    Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Slema, Sonia Ben; Amor, Sana Ben; Bousbih, Rabaa; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

    2015-04-15

    In this paper, we have studied the effect of rapid thermal annealing on the optical properties of porous silicon layers doped with lithium (Li/PS). Surface modification of As-deposited Li/PS samples through thermal annealing were investigated by varying the temperature from 100 °C to 800 °C in an infrared (IR) heated belt furnace. A decrease in the reflectivity to about 6% for Li/PS annealed at 200 °C was obtained. From Photoluminescence (PL) spectra, a blue-shift of the gap was observed when the temperature is increased to 800 °C; we correlate these results to the change in chemical composition of the layers in order to find the optimized conditions for a potential application in silicon solar cells. - Highlights: • We have varied the annealing temperature of PS doped with Li. • PL intensity shows significant variation as function of temperature. • We observe reduce of Si–O–Li bands with increasing temperature. • Concurrent with the loss of Li we observe a decrease of the PL.

  14. Organic products from Ca14Co3 autoradiolysis: effects of thermal annealing

    International Nuclear Information System (INIS)

    Albarran S, M.G.; Collins, K.E.; Collins, C.H.

    1986-01-01

    Autoradiolysis of Ca 14 Co 3 produces several different low molecular mass organic compounds which can be conveniently observed after ion exclusion-partition chromatographic separation of the dissolved sample, provided that the solid was prepared with high specific activity carbon-14 and has been stored for a sufficiently long period. Subsequent thermal annealing changes the distribution of these observed compounds, demonstrating that chemical reactions of the precursor species take place in the solid Ca 14 Co 3 matrix. Specifically, the following products were observed after an autoradiolytic dose of 5 MGy: methanol, formaldehyde, formic acid, oxalic acid, glyoxylic acid, glycolic acid and acetic acid, with-G-values ranging from 5x10 -6 to 2x10 -3 . Isochronal annealing to 500 0 C markedly changes the yields of carbon-14 labelled formic and acetic acids but has lesser effects on the other acidic products. This indicates that several different precursor species are present in the autoradiolyzed solid. (Author) [pt

  15. Thermal annealing and recoil reactions of 128I atoms in thermal neutron activated iodate-nitrate mixed crystals

    International Nuclear Information System (INIS)

    Mishra, S.P.; Sharma, R.B.

    1983-01-01

    Recoil reaction of 128 I atoms in neutron irradiated mixed crystals (iodate-nitrate) have been studied by thermal annealing methods. The retention of 128 I (i.e. radioactivity of 128 I retained in the parent chemi cal form) decreases sharply in the beginning and then attains saturation value with the increase in concentration of nitrate. The annealing followed the usual characteristic pattern, viz., a steep rise in retention within the first few minutes and then a saturation value thereafter but these saturation values in case of mixed crystals are lower in comparison to those of pure iodate targets. The process obeys simple first order kinetics and the activation energy obtained are of lower order than those obtained in case of pure targets. The results are discussed in the light of present ideas and the role of nitrate ion and its radiolytic products have also been invoked. (author)

  16. Energy band structure tailoring of vertically aligned InAs/GaAsSb quantum dot structure for intermediate-band solar cell application by thermal annealing process.

    Science.gov (United States)

    Liu, Wei-Sheng; Chu, Ting-Fu; Huang, Tien-Hao

    2014-12-15

    This study presents an band-alignment tailoring of a vertically aligned InAs/GaAs(Sb) quantum dot (QD) structure and the extension of the carrier lifetime therein by rapid thermal annealing (RTA). Arrhenius analysis indicates a larger activation energy and thermal stability that results from the suppression of In-Ga intermixing and preservation of the QD heterostructure in an annealed vertically aligned InAs/GaAsSb QD structure. Power-dependent and time-resolved photoluminescence were utilized to demonstrate the extended carrier lifetime from 4.7 to 9.4 ns and elucidate the mechanisms of the antimony aggregation resulting in a band-alignment tailoring from straddling to staggered gap after the RTA process. The significant extension in the carrier lifetime of the columnar InAs/GaAsSb dot structure make the great potential in improving QD intermediate-band solar cell application.

  17. The effect of low temperature neutron irradiation and annealing on the thermal conductivity of advanced carbon-based materials

    International Nuclear Information System (INIS)

    Barabash, V.; Mazul, I.; Latypov, R.; Pokrovsky, A.; Wu, C.H.

    2002-01-01

    Several carbon-based materials (carbon fibre composites NB 31, NS 31 and UAM-92, doped graphite RGTi-91), were irradiated at about 90 deg. C in the damage dose range 0.0021-0.13 dpa. Significant reduction of the thermal conductivity of all materials was observed (e.g. at damage dose of ∼0.13 dpa the thermal conductivity degraded up to level of ∼2-3% of the initial values). However, saturation of this effect was observed starting at a dose of ∼0.06 dpa. The effect of annealing at 250 and 350 deg. C on the recovery of thermal conductivity of NB 31 and NS 31 was studied and it was shown this annealing can significantly improve thermal conductivity (∼2.5-3 times). The data on the degradation of the thermal conductivity after additional irradiation after annealing is also reported

  18. Physical properties of electrically conductive Sb-doped SnO2 transparent electrodes by thermal annealing dependent structural changes for photovoltaic applications

    International Nuclear Information System (INIS)

    Leem, J.W.; Yu, J.S.

    2011-01-01

    Highlights: · The physical properties of sputtered Sb-doped SnO 2 after annealing were studied. · The figure of merit was estimated from the integral PFD and sheet resistance. · The characteristics of Sb-doped SnO 2 films were optimized by the figure of merit. · An optimized Sb-doped SnO 2 layer is promising for high efficiency photovoltaic cells. - Abstract: We have investigated the optical and electrical characteristics of antimony (Sb)-doped tin oxide (SnO 2 ) films with modified structures by thermal annealing as a transparent conductive electrode. The structural properties were analyzed from the relative void % by spectroscopic ellipsometry as well as the scanning electron microscopy images and X-ray diffraction patterns. As the annealing temperature was raised, Sb-doped SnO 2 films exhibited a slightly enhanced crystallinity with the increase of the grain size from 17.1 nm at 500 deg. C to 34.3 nm at 700 deg. C. Furthermore, the refractive index and extinction coefficient gradually decreased due to the increase in the relative void % within the film during the annealing. The resistivity decreased to 8.2 x 10 -3 Ω cm at 500 deg. C, but it increased rapidly at 700 deg. C. After thermal annealing, the optical transmittance was significantly increased. For photovoltaic applications, the photonic flux density and the figure of merit over the entire solar spectrum were obtained, indicating the highest values of 5.4 x 10 14 cm -2 s -1 nm -1 at 1.85 eV after annealing at 700 deg. C and 340.1 μA cm -2 Ω -1 at 500 deg. C, respectively.

  19. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  20. Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Gorkem Memisoglu

    2012-01-01

    Full Text Available A solution-processed organic ultraviolet photodetector (UV-PD is introduced. The active layer of the UV-PD consists of poly(9,9-dioctyl fluorenyl-2,7–yleneethynylene (PFE and N,N′-bis-n-butyl-1,4,5,8- naphthalenediimide (BNDI with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80∘C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm2 UV light at 368 nm when 60∘C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.

  1. Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Nam; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of); Choi, Hyun Chul [Chonnam National University, Gwangju (Korea, Republic of)

    2012-01-15

    In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn- O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm{sup -1}.

  2. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  3. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  4. Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

    International Nuclear Information System (INIS)

    Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

    2011-01-01

    Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

  5. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  6. Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

    International Nuclear Information System (INIS)

    Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

    2012-01-01

    In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

  7. Effect of annealing procedure on the bonding of ceramic to cobalt-chromium alloys fabricated by rapid prototyping.

    Science.gov (United States)

    Tulga, Ayca

    2018-04-01

    An annealing procedure is a heat treatment process to improve the mechanical properties of cobalt-chromium (Co-Cr) alloys. However, information is lacking about the effect of the annealing process on the bonding ability of ceramic to Co-Cr alloys fabricated by rapid prototyping. The purpose of this in vitro study was to evaluate the effects of the fabrication techniques and the annealing procedure on the shear bond strength of ceramic to Co-Cr alloys fabricated by different techniques. Ninety-six cylindrical specimens (10-mm diameter, 10-mm height) made of Co-Cr alloy were prepared by casting (C), milling (M), direct process powder-bed (LaserCUSING) with and without annealing (CL+, CL), and direct metal laser sintering (DMLS) with annealing (EL+) and without annealing (EL). After the application of ceramic to the metal specimens, the metal-ceramic bond strength was assessed using a shear force test at a crosshead speed of 0.5 mm/min. Shear bond strength values were statistically analyzed by 1-way ANOVA and Tukey multiple comparison tests (α=.05). Although statistically significant differences were found among the 3 groups (M, 29.87 ±2.06; EL, 38.92 ±2.04; and CL+, 40.93 ±2.21; P=.002), no significant differences were found among the others (P>.05). The debonding surfaces of all specimens exhibited mixed failure mode. These results showed that the direct process powder-bed method is promising in terms of metal-ceramic bonding ability. The manufacturing technique of Co-Cr alloys and the annealing process influence metal-ceramic bonding. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  8. Commercial aspects of rapid thermal processing (RTP)

    International Nuclear Information System (INIS)

    Graham, R.G.; Huffman, D.R.

    1996-01-01

    In its broadest sense, Rapid Thermal Processing (RTP TM ) covers the conversion of all types of carbonaceous materials to liquid fuels, high quality fuel gases, and chemicals. Commercial RTP TM activities (including the actual implementation in the market as well as the short-term R and D initiatives) are much narrower in scope, and are focused on the production of high yields of light, non-tarry liquids (i.e. 'bio-crude') from biomass for fuel and chemical markets. RTP TM is not an incineration process. In commercial applications, it is simply the liquification of biomass by the addition of heat at atmospheric pressure in the absence of air or oxygen. There is no direct combustion in the conversion unit. In effect, wood is converted to liquid wood, bagasse to liquid bagasse, straw to liquid straw, etc. The liquid is pourable and pumpable at room temperature, and has approximately the same heating value as the feedstock entering the conversion unit. The typical liquid yield from a representative hardwood at 10 - 15 % moisture content is about 73 % by mass in industrial operations. In general, the yield increases slightly with an increase in feedstock cellulose composition and slightly decreases with an increase in feedstock lignin composition. However, the energy yield remains approximately constant since lignin-derived liquids have a higher energy content than cellulose-derived liquids. RTP TM was commercialised in 1989 after about 10 years of research, development and demonstration. Current product applications include boiler fuel and food chemicals. It is important to note that the primary liquid product or 'bio-crude' is essentially the same whether it is destined for the fuel or the food chemicals markets. refs

  9. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gollu, Sankara Rao, E-mail: sankar.gollu@gmail.com [Plastic Electronics and Energy Lab (PEEL), Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Ramakant, E-mail: diptig@iitb.ac.in; G, Srinivas, E-mail: diptig@iitb.ac.in; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Lab (PEEL) Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  10. Origin of two maxima in specific heat in enthalpy relaxation under thermal history composed of cooling, annealing, and heating.

    Science.gov (United States)

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2016-12-01

    The origin of two maxima in specific heat observed at the higher and the lower temperatures in the glass-transition region in the heating process has been studied for polymethyl methacrylate and polyvinyl chloride using differential scanning calorimetry, and the calculation was done using the phenomenological model equation under a thermal history of the typical annealing experiment composed of cooling, annealing, and heating. The higher maximum is observed above the glass-transition temperature, and it remains almost unchanged independent of annealing time t_{a}, while the lower one is observed above an annealing temperature T_{a} and shifts toward the higher one, increasing its magnitude with t_{a}. The analysis by the phenomenological model equation proposed in order to interpret the memory effect in the glassy state clarifies that under a typical annealing history, two maxima in specific heat essentially appear. The shift of the lower maximum toward higher temperatures from above T_{a} is caused by an increase in the amount of relaxation during annealing with t_{a}. The annealing temperature and the amount of relaxation during annealing play a major role in the determination of the number of maxima in the specific heat.

  11. Thermal annealing of fission tracks in fluorapatite, chlorapatite, manganoanapatite, and Durango apatite: experimental results

    International Nuclear Information System (INIS)

    Ravenhurst, C.E.; Roden-Tice, M.K.; Miller, D.S.

    2003-01-01

    It is well known that the optically measured lengths of fission tracks in apatite crystals are a function of etching conditions, crystallographic orientation of the track, composition of the crystal, and the state of thermal annealing. In this study we standardize etching conditions and optimize track length measurability by etching until etch pits formed at the surface of each apatite crystal reached widths of about 0.74 μm. Etching times using 5M HNO 3 at 21 o C were 31 s for Otter Lake, Quebec, fluorapatite; 47 s for Durango, Mexico, apatite; 33 s for Portland, Connecticut, manganoanapatite; and 11 s for Bamle, Norway, chlorapatite. An etching experiment using two etchant strengths (5M and 1.6M HNO 3 ) revealed that, despite significant differences in etch pit shape, fission-track length anisotropy with respect to crystallographic orientation of the tracks is not a chemical etching effect. A series of 227 constant-temperature annealing experiments were carried out on nuclear reactor induced tracks in oriented slices of the apatites. After etching, crystallographic orientations of tracks were measured along with their lengths. The 200-300 track lengths measured for each slice were ellipse-fitted to give the major (c crystallographic direction) and minor (a crystallographic direction) semi-axes used to calculate equivalent isotropic lengths. The equivalent isotropic length is more useful than mean length for thermal history analysis because the variation caused by anisotropy has been removed. Using normalized etching procedures and equivalent isotropic length data, we found that the fluorapatite anneals most readily, followed by Durango apatite, manganoanapatite, and lastly chlorapatite. (author)

  12. Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

    International Nuclear Information System (INIS)

    Margapoti, Emanuela

    2010-01-01

    To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t A = 30 s at temperatures from T A = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L D ) and the activation energy (E A ) have been determined thereof. For the studied QDs, E A has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t A kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

  13. Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Margapoti, Emanuela

    2010-07-01

    To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t{sub A} = 30 s at temperatures from T{sub A} = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L{sub D}) and the activation energy (E{sub A}) have been determined thereof. For the studied QDs, E{sub A} has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t{sub A} kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

  14. Thermal annealing and pressure effects on BaFe2-xCoxAs2 single crystals.

    Science.gov (United States)

    Shin, Dongwon; Jung, Soon-Gil; Prathiba, G; Seo, Soonbeom; Choi, Ki-Young; Kim, Kee Hoon; Park, Tuson

    2017-11-26

    We investigate the pressure and thermal annealing effects on BaFe2-xCoxAs2 (Co-Ba122) single crystals with x = 0.1 and 0.17 via electrical transport measurements. The thermal annealing treatment not only enhances the superconducting transition temperature (Tc) from 9.6 to 12.7 K for x = 0.1 and from 18.1 to 21.0 K for x = 0.17, but also increases the antiferromagnetic transition temperature (TN). Simultaneous enhancement of Tc and TN by the thermal annealing treatment indicates that thermal annealing could substantially improve the quality of the Co-doped Ba122 samples. Interestingly, Tc of the Co-Ba122 compounds shows a scaling behavior with a linear dependence on the resistivity value at 290 K, irrespective of tuning parameters, such as chemical doping, pressure, and thermal annealing. These results not only provide an effective way to access the intrinsic properties of the BaFe2As2 system, but also may shed a light on designing new materials with higher superconducting transition temperature. © 2017 IOP Publishing Ltd.

  15. Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

    Science.gov (United States)

    Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

    2018-06-01

    Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

  16. Effects of thermal annealing on C/FePt granular multilayers: in situ and ex situ studies

    International Nuclear Information System (INIS)

    Babonneau, D; Abadias, G; Toudert, J; Girardeau, T; Fonda, E; Micha, J S; Petroff, F

    2008-01-01

    The comprehensive study of C/FePt granular multilayers prepared by ion-beam sputtering at room temperature and subsequent annealing is reported. The as-deposited multilayers consist of carbon-encapsulated FePt nanoparticles (average size ∼3 nm) with a disordered face-centered-cubic structure. The effects of thermal annealing on the structural and magnetic properties are investigated by using dedicated ex situ and in situ techniques, including high-resolution transmission electron microscopy, extended x-ray absorption fine structure, magnetometry, and coupled grazing incidence small-angle x-ray scattering and x-ray diffraction. Our structural data show that the particle size and interparticle distance increase slightly with annealing at temperatures below 790 K by thermally activated migration of Fe and Pt atoms. We find that thermal annealing at temperatures above 870 K results in the dramatic growth of the FePt nanoparticles by coalescence and their gradual L1 0 ordering. In addition, we observe a preferential graphitization of the carbon matrix, which provides protection against oxidation for the FePt nanoparticles. Magnetization measurements indicate that progressive magnetic hardening occurs after annealing. The dependences of the blocking temperature, saturation magnetization, coercivity, and magnetocrystalline anisotropy energy on the annealing temperature are discussed on the basis of the structural data

  17. Commercial aspects of rapid thermal processing (RTP)

    Energy Technology Data Exchange (ETDEWEB)

    Graham, R G; Huffman, D R [Ensyn Technologies Inc., Greely, ON (Canada)

    1997-12-31

    In its broadest sense, Rapid Thermal Processing (RTP{sup TM}) covers the conversion of all types of carbonaceous materials to liquid fuels, high quality fuel gases, and chemicals. Scientifically, it is based on the general premise that products which result from the extremely rapid application of heat to a given feedstock are inherently more valuable than those which are produced when heat is applied much more slowly over longer periods of processing time. Commercial RTP{sup TM} activities (including the actual implementation in the market as well as the short-term R and D initiatives) are much narrower in scope, and are focused on the production of high yields of light, non-tarry liquids (i.e. `bio-crude`) from biomass for fuel and chemical markets. Chemicals are of significant interest from an economical point of view since they typically have a higher value than fuel products. Liquid fuels are of interest for many reasons: (1) Liquid fuels do not have to be used immediately after production, such as is the case with hot combustion gases or combustible gases produced via gasification. This allows the decoupling of fuel production from the end-use (ie. the conversion of fuel to energy). (2) The higher energy density of liquid fuels vs. that of fuel gases and solid biomass results in a large reduction in the costs associated with storage and transportation. (3) The costs to retrofit an existing gas or oil fired combustion system are much lower than replacement with a solid fuel combustor. (4) In general, liquid fuel combustion is much more efficient, controllable, and cleaner than the combustion of solid fuels. (5) The production of liquid `bio-crude` permits the removal of ash from the biomass prior to combustion or other end-use applications. (6) Gas or liquid fuel-fired diesel or turbine engines cannot operate commercially on solid fuels. Although wood represents the biomass which is of principal commercial interest (including a vast array of wood residues

  18. Commercial aspects of rapid thermal processing (RTP)

    Energy Technology Data Exchange (ETDEWEB)

    Graham, R.G.; Huffman, D.R. [Ensyn Technologies Inc., Greely, ON (Canada)

    1996-12-31

    In its broadest sense, Rapid Thermal Processing (RTP{sup TM}) covers the conversion of all types of carbonaceous materials to liquid fuels, high quality fuel gases, and chemicals. Scientifically, it is based on the general premise that products which result from the extremely rapid application of heat to a given feedstock are inherently more valuable than those which are produced when heat is applied much more slowly over longer periods of processing time. Commercial RTP{sup TM} activities (including the actual implementation in the market as well as the short-term R and D initiatives) are much narrower in scope, and are focused on the production of high yields of light, non-tarry liquids (i.e. `bio-crude`) from biomass for fuel and chemical markets. Chemicals are of significant interest from an economical point of view since they typically have a higher value than fuel products. Liquid fuels are of interest for many reasons: (1) Liquid fuels do not have to be used immediately after production, such as is the case with hot combustion gases or combustible gases produced via gasification. This allows the decoupling of fuel production from the end-use (ie. the conversion of fuel to energy). (2) The higher energy density of liquid fuels vs. that of fuel gases and solid biomass results in a large reduction in the costs associated with storage and transportation. (3) The costs to retrofit an existing gas or oil fired combustion system are much lower than replacement with a solid fuel combustor. (4) In general, liquid fuel combustion is much more efficient, controllable, and cleaner than the combustion of solid fuels. (5) The production of liquid `bio-crude` permits the removal of ash from the biomass prior to combustion or other end-use applications. (6) Gas or liquid fuel-fired diesel or turbine engines cannot operate commercially on solid fuels. Although wood represents the biomass which is of principal commercial interest (including a vast array of wood residues

  19. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.

    2012-05-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  20. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.; Koros, William J.; Johnson, J.R.; Karvan, Oguz

    2012-01-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  1. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-03-15

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  2. Annealing effect on thermal conductivity and microhardness of carbon nanotube containing Se80Te16Cu4 glassy composites

    Science.gov (United States)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2018-02-01

    This study deals with the effect of thermal annealing on structural/microstructural, thermal and mechanical behavior of pristine Se80Te16Cu4 and carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composites. Pristine Se80Te16Cu4, 3 and 5 wt%CNTs-Se80Te16Cu4 glassy composites are annealed in the vicinity of glass transition temperature to onset crystallization temperature (340-380 K). X-ray diffraction (XRD) pattern revealed formation of polycrystalline phases of hexagonal CuSe and trigonal selenium. The indexed d-values in XRD patterns are in well conformity with the d-values obtained after the indexing of the ring pattern of selected area electron diffraction pattern of TEM images. The SEM investigation exhibited that the grain size of the CNTs containing Se80Te16Cu4 glassy composites increased with increasing annealing temperature and decreased at further higher annealing temperature. Thermal conductivity, microhardness exhibited a substantial increase with increasing annealing temperature of 340-360 K and slightly decreases for 380 K. The variation of thermal conductivity and microhardness can be explained by cross-linking formation and voids reduction.

  3. Effect of thermal annealing on the structural and optical properties of tris-(8-hydroxyquinoline)aluminum(III) (Alq3 ) films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-05-01

    Tris-(8-hydroxyquionoline)aluminum (Alq3 ) was synthesized and coated on to a glass substrate using the dip coating method. The structural and optical properties of the Alq3 film after thermal annealing from 50°C to 300°C in 50° steps was studied. The films have been prepared with 2 to 16 layers (42-324 nm). The thickness and thermal annealing of Alq3 films were optimized for maximum luminescence yield. The Fourier transform infrared spectrum confirms the formation of quinoline with absorption in the region 700 - 500/cm. Partial sublimation and decomposition of quinoline ion was observed with the Alq3 films annealed at 300°C. The X-ray diffraction pattern of the Alq3 film annealed at 50°C to 150°C reveals the amorphous nature of the films. The Alq3 film annealed above 150°C were crystalline nature. Film annealed at 150°C exhibits a photoluminescence intensity maximum at 512 nm when excited at 390 nm. The Alq3 thin film deposited with 10 layers (220 nm) at 150°C exhibited maximum luminescence yield. Copyright © 2014 John Wiley & Sons, Ltd.

  4. Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 1. Program overview. Final report

    International Nuclear Information System (INIS)

    Mager, T.R.

    1983-01-01

    An EPRI sponsored program was carried out by Westinghouse to determine the extent of fracture toughness recovery as a function of annealing time and temperature for neutron embrittlement sensitive reactor vessel material and to develop an optimal thermal anneal procedure for field applications. Program materials were three weldments fabricated by Combustion Engineering, Inc., from the same heat of A533 Grade B Class 1 plate material and the same heat of MnMoNi weld wire. The only variables were the target copper level and the welding flux which was Linde Grade 80 and Linde 0091. Weldments of 0.22, 0.36, and 0.41 wt % copper were produced. It was concluded from this study that excellent recovery of all properties could be achieved by annealing at 850 0 F (454 0 C) and above for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the rate which would have been expected had no anneal been performed. System limitations were identified for both wet and dry annealing methods

  5. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1994-01-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

  6. Effects of Annealing Conditions on Mixed Lead Halide Perovskite Solar Cells and Their Thermal Stability Investigation.

    Science.gov (United States)

    Yang, Haifeng; Zhang, Jincheng; Zhang, Chunfu; Chang, Jingjing; Lin, Zhenhua; Chen, Dazheng; Xi, He; Hao, Yue

    2017-07-21

    In this work, efficient mixed organic cation and mixed halide (MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃) perovskite solar cells are demonstrated by optimizing annealing conditions. AFM, XRD and PL measurements show that there is a better perovskite film quality for the annealing condition at 100 °C for 30 min. The corresponding device exhibits an optimized PCE of 16.76% with V OC of 1.02 V, J SC of 21.55 mA/cm² and FF of 76.27%. More importantly, the mixed lead halide perovskite MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃ can significantly increase the thermal stability of perovskite film. After being heated at 80 °C for 24 h, the PCE of the MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃ device still remains at 70.00% of its initial value, which is much better than the control MAPbI₃ device, where only 46.50% of its initial value could be preserved. We also successfully fabricated high-performance flexible mixed lead halide perovskite solar cells based on PEN substrates.

  7. Thermal Annealing Effect on Poly(3-hexylthiophene: Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

    Directory of Open Access Journals (Sweden)

    H. Derouiche

    2013-01-01

    Full Text Available We have fabricated poly(3-hexylthiophene (P3HT/copper phthalocyanine (CuPc/fullerene (C60 ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO/poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT/PSS photoanode and a bathocuproine (BCP/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

  8. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  9. Impact of Thermal Annealing on Organic Photovoltaic Cells Using Regioisomeric Donor-Acceptor-Acceptor Molecules.

    Science.gov (United States)

    Zhang, Tao; Han, Han; Zou, Yunlong; Lee, Ying-Chi; Oshima, Hiroya; Wong, Ken-Tsung; Holmes, Russell J

    2017-08-02

    We report a promising set of donor-acceptor-acceptor (D-A-A) electron-donor materials based on coplanar thieno[3,2-b]/[2,3-b]indole, benzo[c][1,2,5]thiadiazole, and dicyanovinylene, which are found to show broadband absorption with high extinction coefficients. The role of the regioisomeric electron-donating thienoindole moiety on the physical and structural properties is examined. Bulk heterojunction (BHJ) organic photovoltaic cells (OPVs) based on the thieno[2,3-b]indole-based electron donor NTU-2, using C 70 as an electron acceptor, show a champion power conversion efficiency of 5.2% under AM 1.5G solar simulated illumination. This efficiency is limited by a low fill factor (FF), as has previously been the case in D-A-A systems. In order to identify the origin of the limited FF, further insight into donor layer charge-transport behavior is realized by examining planar heterojunction OPVs, with emphasis on the evolution of film morphology with thermal annealing. Compared to as-deposited OPVs that exhibit insufficient donor crystallinity, crystalline OPVs based on annealed thin films show an increase in the short-circuit current density, FF, and power conversion efficiency. These results suggest that that the crystallization of D-A-A molecules might not be realized spontaneously at room temperature and that further processing is needed to realize efficient charge transport in these materials.

  10. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  11. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

    Science.gov (United States)

    Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

    2018-03-01

    Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

  12. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-09-01

    We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

  13. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  14. Rapid shear alignment of sub-10 nm cylinder-forming block copolymer films based on thermal expansion mismatch

    Science.gov (United States)

    Nicaise, Samuel M.; Gadelrab, Karim R.; G, Amir Tavakkoli K.; Ross, Caroline A.; Alexander-Katz, Alfredo; Berggren, Karl K.

    2018-01-01

    Directed self-assembly of block copolymers (BCPs) provided by shear-stress can produce aligned sub-10 nm structures over large areas for applications in integrated circuits, next-generation data storage, and plasmonic structures. In this work, we present a fast, versatile BCP shear-alignment process based on coefficient of thermal expansion mismatch of the BCP film, a rigid top coat and a substrate. Monolayer and bilayer cylindrical microdomains of poly(styrene-b-dimethylsiloxane) aligned preferentially in-plane and orthogonal to naturally-forming or engineered cracks in the top coat film, allowing for orientation control over 1 cm2 substrates. Annealing temperatures, up to 275 °C, provided low-defect alignment up to 2 mm away from cracks for rapid (<1 min) annealing times. Finite-element simulations of the stress as a function of annealing time, annealing temperature, and distance from cracks showed that shear stress during the cooling phase of the thermal annealing was critical for the observed microdomain alignment.

  15. Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Rodriguez, A.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2006-01-01

    Silicon capped by thermal oxide has been implanted with 1 x 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage

  16. Rapid Thermal Processing to Enhance Steel Toughness.

    Science.gov (United States)

    Judge, V K; Speer, J G; Clarke, K D; Findley, K O; Clarke, A J

    2018-01-11

    Quenching and Tempering (Q&T) has been utilized for decades to alter steel mechanical properties, particularly strength and toughness. While tempering typically increases toughness, a well-established phenomenon called tempered martensite embrittlement (TME) is known to occur during conventional Q&T. Here we show that short-time, rapid tempering can overcome TME to produce unprecedented property combinations that cannot be attained by conventional Q&T. Toughness is enhanced over 43% at a strength level of 1.7 GPa and strength is improved over 0.5 GPa at an impact toughness of 30 J. We also show that hardness and the tempering parameter (TP), developed by Holloman and Jaffe in 1945 and ubiquitous within the field, is insufficient for characterizing measured strengths, toughnesses, and microstructural conditions after rapid processing. Rapid tempering by energy-saving manufacturing processes like induction heating creates the opportunity for new Q&T steels for energy, defense, and transportation applications.

  17. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  18. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  19. Dependence of TL-property changes of natural quartzes on aluminium contents accompanied by thermal annealing treatment

    International Nuclear Information System (INIS)

    Hashimoto, T.; Sakaue, S.; Aoki, H.; Ichino, M.

    1994-01-01

    The TL properties were investigated using both an IPDA (Intensified Photo-Diode Array) spectrometric system and a TLCI (Thermoluminescence Colour Image) method after thermal annealing treatment at several temperatures. An apparent colour change from original blue- (BTL) to red-TL(RTL) has unexpectedly occurred in a Z-cut slice of Madagascar quartz, after an annealing treatment around 1000 o C. From the TL-colour change studies of the Z-cut slice, it was confirmed that original BTL intensities are inversely proportional to the Al contents; the TLCI-patterns of the original or annealed Z-cut slice gave stripe patterns corresponding to Al impurity contents along the crystal growth direction particularly yielding an intense appearance of RTL on higher Al contents after the annealing treatment. This changeability of TL-colour towards RTL after thermal annealing treatment was found to be intimately correlated with the square of Al concentrations, although BTL clearly changed as linearly proportional to Al impurity contents. Finally, the cleavage of Al-O-Al bonds or some sites in the vicinity of Al-O-Al bonds were plausibly considered to play an important role for the formation of RTL colour centres in natural quartzes as a result of the operation of high temperature effects. (Author)

  20. Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

    International Nuclear Information System (INIS)

    Kim, Jonggi; Lee, Kyumin; Kim, Yonjae; Na, Heedo; Ko, Dae-Hong; Sohn, Hyunchul; Lee, Sunghoon

    2013-01-01

    In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO 2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO 2 films in the Pt/ZrO 2 /TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO 2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO x N y layer between the ZrO 2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiO x N y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching. - Highlights: • Effect of thermal annealing on resistive switching of ZrO 2 was investigated. • Both unipolar and bipolar switching were shown in the Pt/ZrO 2 /TiN stack. • TiO x N y interface layer was enlarged with increasing annealing temperature. • TiO x N y interface plays an important role in resistive switching properties

  1. PLEPS study of thermal annealing influence on binary Fe-11.62 % Cr alloys

    International Nuclear Information System (INIS)

    Sojak, S.; Slugen, V.; Petriska, V.; Stancek, S.; Vitazek, K.; Stacho, M.; Veternikova, J.; Sabelova, V.; Krsjak, V.; Egger, W.; Ravelli, L.; Skarba, M.; Priputen, P.

    2012-01-01

    Lifetime of structural materials is one of the crucial factors for operation of nuclear power plants (NPP). Therefore, high expectations and requirements are put on these materials from the radiation, heat and mechanical resistance point of view. Even higher stresses are expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Therefore, investigation of new structural materials is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels with good characteristics as lower activation, good resistance to volume swelling, good radiation, and heat resistance (up to 550 grad C). Our research is focused on study of radiation damage simulated by ion implantations and thermal treatment evaluation of RAFM steels in form of binary Fe-Cr model alloys. Due to the defect production by ions, there was applied an approach for restoration of initial physical and mechanical characteristics of structural materials in the form of thermal annealing, with goal to decrease size and amount of accumulated defects. Experimental analysis of material damage at microstructural level was performed by Pulsed Low Energy Positron System (PLEPS) at the high intensity positron source NEPOMUC at the Munich research reactor FRM-II. (authors)

  2. Time effects in the thermal annealing of Fe/V multilayers

    CERN Document Server

    Borges, J F M

    2003-01-01

    We report a study on the structural and magnetic properties of iron-vanadium thin films grown in multilayer form and mixed by thermal treatment. The multilayer samples were annealed at 610 deg. C for times ranging from 10 to 540 min. The samples were structurally characterized by means of x-ray diffraction (XRD) and by x-ray absorption spectroscopy (XAS). The magnetic characterization was carried out with a conventional alternating gradient magnetometer (AGM) and by conversion electron Moessbauer spectroscopy (CEMS). The XRD result for the as-deposited multilayer shows a high degree of crystallinity while the CEMS result suggests an abrupt interface, since no significant contribution from vanadium in iron is observed. After the thermal treatment, the results from XRD show a phase transformation of the disordered body-centred-cubic structure (alpha-phase) into a tetragonal structure (sigma-phase) and a subsequent return to the alpha-phase. This alpha-sigma-alpha oscillation is not reported in the literature av...

  3. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  4. Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Njoroge, E.G., E-mail: eric.njoroge@up.ac.za [Department of Physics, University of Pretoria, Pretoria (South Africa); Theron, C.C. [Department of Physics, University of Pretoria, Pretoria (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Wamwangi, D. [School of Physics, University of Witwatersrand, Johannesburg (South Africa); Hlatshwayo, T.T. [Department of Physics, University of Pretoria, Pretoria (South Africa); Comrie, C.M. [MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Malherbe, J.B. [Department of Physics, University of Pretoria, Pretoria (South Africa)

    2016-03-15

    The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd{sub 3}Si or (Pd{sub 2}Si + Pd{sub 4}Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd{sub 2}Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55 × 10{sup 15} at cm{sup −2}/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe{sup 26+} ions at room temperature at high fluences of 1.07 × 10{sup 14} and 4 × 10{sup 14} ions/cm{sup 2} and at 400 °C at lower fluences of 5 × 10{sup 13} ions/cm{sup 2}. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd{sub 4}Si, Pd{sub 9}Si{sub 2} and Pd{sub 5}Si phases which were identified by GIXRD analysis.

  5. In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Ambrosini, S.; Wagner, Jakob Birkedal; Booth, Tim

    2011-01-01

    Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking...... faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment....

  6. Effects of X irradiation and high field electron injection of the electrical properties of rapid thermal oxides

    International Nuclear Information System (INIS)

    Schubert, W.K.; Seager, C.H.

    1988-01-01

    Rapid thermal oxidation (RTO) is a promising tool for fabricating the thin gate oxides (5 to 15 nm) that will be needed in future submicron integrated circuits, because of its inherently superior time-temperature control when compared to conventional oxidation methods. It is important to demonstrate that RTO can be used without adversely affecting the radiation hardness or high field properties of the oxide. Beyond this demonstration, rapid thermal processing makes it possible to determine more precisely how the kinetics of oxidation and post oxidation annealing affect the device properties. Information of this type should prove useful in modeling relevant defect formation mechanisms. The present paper is part of a systematic study of the effect of rapid thermal processing on the radiation and high field response of thin oxides

  7. Rapid solar-thermal decarbonization of methane

    Science.gov (United States)

    Dahl, Jaimee Kristen

    Due to the ever-increasing demand for energy and the concern over the environmental impact of continuing to produce energy using current methods, there is interest in developing a hydrogen economy. Hydrogen is a desirable energy source because it is abundant in nature and burns cleanly. One method for producing hydrogen is to utilize a renewable energy source to obtain high enough temperatures to decompose a fossil fuel into its elements. This thesis work is directed at developing a solar-thermal aerosol flow reactor to dissociate methane to carbon black and hydrogen. The technology is intended as a "bridge" between current hydrogen production methods, such as conventional steam-methane reformers, and future "zero emission" technology for producing hydrogen, such as dissociating water using a renewable heating source. A solar furnace is used to heat a reactor to temperatures in excess of 2000 K. The final reactor design studied consists of three concentric vertical tubes---an outer quartz protection tube, a middle solid graphite heating tube, and an inner porous graphite reaction tube. A "fluid-wall" is created on the inside wall of the porous reaction tube in order to prevent deposition of the carbon black co-product on the reactor tube wall. The amorphous carbon black produced aids in heating the gas stream by absorbing radiation from the reactor wall. Conversions of 90% are obtained at a reactor wall temperature of 2100 K and an average residence time of 0.01 s. Computer modeling is also performed to study the gas flow and temperature profiles in the reactor as well as the kinetics of the methane dissociation reaction. The simulations indicate that there is little flow of the fluid-wall gas through the porous wall in the hot zone region, but this can be remedied by increasing the inlet temperature of the fluid-wall gas and/or increasing the tube permeability only in the hot zone region of the wall. The following expression describes the kinetics of methane

  8. All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

    Science.gov (United States)

    Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

    2018-01-01

    We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

  9. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  10. Thermal annealing behavior of niobium-implanted {alpha}-Al{sub 2}O{sub 3} under reducing environment

    Energy Technology Data Exchange (ETDEWEB)

    Jianer, Zeng; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Mingle, Gan; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Thermal annealing behavior is studied in {alpha}-Al{sub 2}O{sub 3} implanted with {sup 93}Nb{sup +} using RBS/channeling technique and optical absorption spectrometry. The samples with <0001> and <112-bar0> orientations are implanted with 300 keV and 400 keV {sup 93}Nb{sup +} ions. Thermal annealing under reducing environment (Ar+3%H{sub 2}) is employed in the temperature range from 600 to 1000degC to explore unusual materials phase. The annealing up to 1000degC for an hour does not show any essential change in RBS/channeling spectra in two kinds of samples but the significant decrease in the visible region is observed in optical absorption spectra. After annealing at 1000degC for 10 hours, the recovery of the lattice damage is detected by RBS/channeling analysis especially in (112-bar0) sample. In the optical absorption spectra, new absorption envelope appears in the ultraviolet region. The results are related to the formation of niobium metal fine particles, and the sharp distribution is realized especially in (0001) sample. (author)

  11. Ion-beam mixing and thermal annealing of Al--Nb and Al--Ta thin films

    International Nuclear Information System (INIS)

    Rai, A.K.; Bhattacharya, R.S.; Mendiratta, M.G.; Subramanian, P.R.; Dimiduk, D.M.

    1988-01-01

    Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattering. The individual layer thicknesses were adjusted to obtain the overall compositions as Al 3 Nb and Al 3 Ta. The films were ion mixed with 1 MeV Au + ions at a dose of 1 x 10 16 ions cm/sup -2/ . Uniform mixing and amorphization were achieved for both Al--Nb and Al--Ta systems. Equilibrium crystalline Al 3 Nb and Al 3 Ta phases were formed after annealing of ion mixed amorphous films at 400 0 C for 6 h. Unmixed films, however, remained unreacted at 400 0 C for 1 h. Partial reaction was observed in the unmixed film of Al--Nb at 400 0 C for 6 h. After annealing at 500 0 C for 1 h, a complete reaction and formation of Al 3 Nb and Al 3 Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed

  12. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  13. Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

    Science.gov (United States)

    Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

    2017-04-01

    The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

  14. Electrode Materials, Thermal Annealing Sequences, and Lateral/Vertical Phase Separation of Polymer Solar Cells from Multiscale Molecular Simulations

    KAUST Repository

    Lee, Cheng-Kuang

    2014-12-10

    © 2014 American Chemical Society. The nanomorphologies of the bulk heterojunction (BHJ) layer of polymer solar cells are extremely sensitive to the electrode materials and thermal annealing conditions. In this work, the correlations of electrode materials, thermal annealing sequences, and resultant BHJ nanomorphological details of P3HT:PCBM BHJ polymer solar cell are studied by a series of large-scale, coarse-grained (CG) molecular simulations of system comprised of PEDOT:PSS/P3HT:PCBM/Al layers. Simulations are performed for various configurations of electrode materials as well as processing temperature. The complex CG molecular data are characterized using a novel extension of our graph-based framework to quantify morphology and establish a link between morphology and processing conditions. Our analysis indicates that vertical phase segregation of P3HT:PCBM blend strongly depends on the electrode material and thermal annealing schedule. A thin P3HT-rich film is formed on the top, regardless of bottom electrode material, when the BHJ layer is exposed to the free surface during thermal annealing. In addition, preferential segregation of P3HT chains and PCBM molecules toward PEDOT:PSS and Al electrodes, respectively, is observed. Detailed morphology analysis indicated that, surprisingly, vertical phase segregation does not affect the connectivity of donor/acceptor domains with respective electrodes. However, the formation of P3HT/PCBM depletion zones next to the P3HT/PCBM-rich zones can be a potential bottleneck for electron/hole transport due to increase in transport pathway length. Analysis in terms of fraction of intra- and interchain charge transports revealed that processing schedule affects the average vertical orientation of polymer chains, which may be crucial for enhanced charge transport, nongeminate recombination, and charge collection. The present study establishes a more detailed link between processing and morphology by combining multiscale molecular

  15. Influence of thermal annealing on the morphology and structural properties of a conjugated polymer in blends with an organic acceptor material

    CSIR Research Space (South Africa)

    Motaung, DE

    2009-06-01

    Full Text Available variation in morphology during annealing due to the crystallization of C60. The as-prepared P3HT:C60 films have a higher surface roughness and larger cluster size compared to the as-prepared P3HT films. The thermal annealing effects on the optical microscopy...

  16. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  17. Evolution of recrystallization microstructure and texture during rapid annealing in strip-cast non-oriented electrical steels

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Feng [The State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Xu, Yun-Bo, E-mail: yunbo_xu@126.com [The State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Zhang, Yuan-Xiang; Wang, Yang; Lu, Xiang [The State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K [Laboratory for Excellence in Advanced Steel Research, Center for Structural and Functional Materials Research and Innovation and Department of Metallurgical and Materials Engineering, University of Texas at El Paso, 500W, University Avenue, El Paso, TX 79968 (United States); Wang, Guo-Dong [The State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819 (China)

    2015-05-01

    Non-oriented electrical steel as-cast strip was produced by twin roll strip casting process, and subsequently cold rolled and annealed at heating rates in the range of 3–450 °C/s with the aim to elucidate the effect of heating rate on the evolution of recrystallized microstructure and texture. The average grain size was rapidly increased when the heating rate was increased from 3 to 25 °C/s, and decreased when the heating rate was greater than 25 °C/s. The average grain size did not increase linearly with heating rate, which was related to different degree of nucleation and growth rate. The recrystallization texture exhibited pronounced improvement during rapid annealing. At high heating rate, the Goss and Cube had a higher probability of nucleation of shear bands with high stored energy, while the intensity of the γ-fiber texture was significantly reduced. The highest B{sub 50} value attained was 1.803 T at a heating rate of 300 °C/s. The study indicates that rapid heating has strong effect on the recrystallization behavior in non-oriented electrical steels, which facilitates optimization of microstructure and texture, especially in the coarse-grained structure. - Highlights: • The effects of heating rate on the microstructure and texture of non-oriented steel were investigated. • The average grain size did not change monotonically with heating rate. • Recrystallization texture exhibited pronounced improvement in the as-cast strip. • Superior magnetic properties were obtained in twin-rolled strip casting process.

  18. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    International Nuclear Information System (INIS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-01-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

  19. Comparison of different experimental and analytical measures of the thermal annealing response of neutron-irradiated RPV steels

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    The thermal annealing response of several materials as indicated by Charpy transition temperature (TT) and upper-shelf energy (USE), crack initiation toughness, K Jc , predictive models, and automated-ball indentation (ABI) testing are compared. The materials investigated are representative reactor pressure vessel (RPV) steels (several welds and a plate) that were irradiated for other tasks of the Heavy-Section Steel Irradiation (HSSI) Program and are relatively well characterized in the unirradiated and irradiated conditions. They have been annealed at two temperatures, 343 and 454 C (650 and 850 F) for varying lengths of time. The correlation of the Charpy response and the fracture toughness, ABI, and the response predicted by the annealing model of Eason et al. for these conditions and materials appears to be reasonable. The USE after annealing at the temperature of 454 C appears to recover at a faster rate than the TT, and even over-recovers (i.e., the recovered USE exceeds that of the unirradiated material)

  20. Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

    Science.gov (United States)

    Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

    2016-04-01

    In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

  1. Rapid cooling in continuous annealing and galvanizing lines; Refroidissement rapide dans les lignes de recuit continu et de galvanisation

    Energy Technology Data Exchange (ETDEWEB)

    Renard, M. [DREVER International SA, Angleur (Belgium); Gouriet, J.B.; Planquart, Ph.; Van Beeck, J.; Buchlin, J.M. [Von Karman Institute for Fluid Dynamics Brussels (Belgium)

    2003-08-01

    The production of new steel grades - such as dual phase and TRIP steels - requires improvements to both process and equipment of continuous galvanizing lines. In particular, progress has to be obtained in cooling technology in order to get the desired mechanical properties. This paper presents a study of design parameters allowing the optimization of fast gas multi-jet cooling systems. The thermal study involves the application of infrared thermography and three-dimensional numerical simulations. Furthermore, a dynamic study is performed in order to reduce steel strip vibration. (authors)

  2. Rapid thermal cycling of new technology solar array blanket coupons

    Science.gov (United States)

    Scheiman, David A.; Smith, Bryan K.; Kurland, Richard M.; Mesch, Hans G.

    1990-01-01

    NASA Lewis Research Center is conducting thermal cycle testing of a new solar array blanket technologies. These technologies include test coupons for Space Station Freedom (SSF) and the advanced photovoltaic solar array (APSA). The objective of this testing is to demonstrate the durability or operational lifetime of the solar array interconnect design and blanket technology within a low earth orbit (LEO) or geosynchronous earth orbit (GEO) thermal cycling environment. Both the SSF and the APSA array survived all rapid thermal cycling with little or no degradation in peak performance. This testing includes an equivalent of 15 years in LEO for SSF test coupons and 30 years of GEO plus ten years of LEO for the APSA test coupon. It is concluded that both the parallel gap welding of the SSF interconnects and the soldering of the APSA interconnects are adequately designed to handle the thermal stresses of space environment temperature extremes.

  3. Rapid charging of thermal energy storage materials through plasmonic heating.

    Science.gov (United States)

    Wang, Zhongyong; Tao, Peng; Liu, Yang; Xu, Hao; Ye, Qinxian; Hu, Hang; Song, Chengyi; Chen, Zhaoping; Shang, Wen; Deng, Tao

    2014-09-01

    Direct collection, conversion and storage of solar radiation as thermal energy are crucial to the efficient utilization of renewable solar energy and the reduction of global carbon footprint. This work reports a facile approach for rapid and efficient charging of thermal energy storage materials by the instant and intense photothermal effect of uniformly distributed plasmonic nanoparticles. Upon illumination with both green laser light and sunlight, the prepared plasmonic nanocomposites with volumetric ppm level of filler concentration demonstrated a faster heating rate, a higher heating temperature and a larger heating area than the conventional thermal diffusion based approach. With controlled dispersion, we further demonstrated that the light-to-heat conversion and thermal storage properties of the plasmonic nanocomposites can be fine-tuned by engineering the composition of the nanocomposites.

  4. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  5. Study of the optical properties and the carbonaceous clusters in thermally-annealed CR-39 and Makrofol-E polymer-based solid-state nuclear track detectors

    International Nuclear Information System (INIS)

    El Ghazaly, M.

    2012-01-01

    The induced modifications in the optical properties of CR-39 and Makrofol-E polymer-based solid state nuclear track detectors were investigated after thermal annealing at a temperature of 200 .deg. C for different durations. The optical properties were studied using an UV-visible spectrophotometer. From the UV-visible spectra, the direct and the indirect optical band gaps, Urbach's energies, and the number of carbon atoms in a cluster were determined. The absorbance of CR-39 plastic detector was found to decrease with increasing annealing time while the absorbance of Makrofol-E decreased with increasing annealing time. The width of the tail of localized states in the band gap ΔE was evaluated with the Urbach method. The optical energy band gaps were obtained from the direct and the indirect allowed transitions in K-space. Both of the direct and the indirect band gaps of the annealed CR-39 detector decrease with increasing annealing time while in Makrofol-E, they decreased after an annealing time of 15 minute and then showed no remarkable changes for a prolonged annealing times. Urbach's energy decreased significantly for both CR-39 and Makrofol-E with increasing annealing time. The number of carbon atoms in a cluster increased in the CR-39 detector with increasing annealing time while it decreased with increasing annealing time for Makrofol-E. We may conclude that the CR-39 detector undergoes greater modifications than the Makrofol-E detector upon thermal annealing at 200 .deg. C. In conclusion, the induced modifications in the optical properties of CR-39 and Makrofol-E are correlated with the temperature and the duration of annealing.

  6. An anti-bacterial approach to nanoscale roughening of biomimetic rice-like pattern PP by thermal annealing

    Science.gov (United States)

    Jafari Nodoushan, Emad; Ebrahimi, Nadereh Golshan; Ayazi, Masoumeh

    2017-11-01

    In this paper, we introduced thermal annealing treatment as an effective way of increasing the nanoscale roughness of a semi-crystalline polymer surface. Annealing treatment applied to a biomimetic microscale pattern of rice leaf to achieve a superhydrophobic surface with a hierarchical roughness. Resulted surfaces was characterized by XRD, AFM and FE-SEM instruments and showed an increase of roughness and cristallinity within both time and temperature of treatment. These two parameters also impact on measured static contact angle up to 158°. Bacterial attachment potency has an inverse relationship with the similarity of surface pattern dimensions and bacterial size and due to that, thermal annealing could be an effective way to create anti-bacterial surface beyond its effect on water repellency. Point in case, the anti-bacterial properties of produced water-repellence surfaces of PP were measured and counted colonies of both gram-negative (E. coli) and gram-positive (S. aureus) bacteria reduced with the nature of PP and hierarchical pattern on that. Anti-bacterial characterization of the resulted surface reveals a stunning reduction in adhesion of gram-positive bacteria to the surface. S. aureus reduction rates equaled to 95% and 66% when compared to control blank plate and smooth surface of PP. Moreover, it also could affect the other type of bacteria, gram-negative (E. coli). In the latter case, adhesion reduction rates calculated 66% and 53% when against to the same controls, respectively.

  7. Modeling the effects of ion dose and crystallographic symmetry on the morphological evolution of embedded precipitates under thermal annealing

    International Nuclear Information System (INIS)

    Li, Kun-Dar

    2014-01-01

    Highlights: •We model the faceted precipitates formation by post-implantation annealing. •The anisotropic interfacial energy and diffusion kinetics play crucial roles. •The evolutions of faceted precipitates, including Ostwald ripening, are revealed. •The mechanism of the nucleation and growth is based on the atomic diffusion. •The effects of ion dose and crystallographic symmetry are also investigated. -- Abstract: Thermal annealing is one of the most common techniques to synthesize embedded precipitates by ion implantation process. In this study, an anisotropic phase field model is presented to investigate the effects of ion dose and crystallographic symmetry on the morphological formation and evolution of embedded precipitates during post-implantation thermal annealing process. This theoretical model provides an efficient numerical approach to understand the phenomenon of faceted precipitates formation by ion implantation. As a theoretical analysis, the interfacial energy and diffusion kinetics play prominent roles in the mechanism of atomic diffusion for the precipitates formation. With a low ion dose, faceted precipitates are developed by virtue of the anisotropic interfacial energy. As an increase of ion dose, connected precipitates with crystallographic characters on the edge are appeared. For a high ion dose, labyrinth-like nanostructures of precipitates are produced and the characteristic morphology of crystallographic symmetry becomes faint. These simulation results for the morphological evolutions of embedded precipitates by ion implantation are corresponded with many experimental observations in the literatures. The quantitative analyses of the simulations are also well described the consequence of precipitates formation under different conditions

  8. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    International Nuclear Information System (INIS)

    Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

    2009-01-01

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  9. Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

    Energy Technology Data Exchange (ETDEWEB)

    Oniya, Ebenezer O., E-mail: ebenezer.oniya@aaua.edu.ng [Physics and Electronics Department, Adekunle Ajasin University, 342111 Akungba Akoko (Nigeria); Polymeris, George S. [Institute of Nuclear Sciences, Ankara University, Beşevler 06100, Ankara (Turkey); Jibiri, Nnamdi N. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Tsirliganis, Nestor C. [Department of Archaeometry and Physicochemical Measurements, R.C. ‘Athena’, P.O. Box 159, Kimmeria University Campus, 67100 Xanthi (Greece); Babalola, Israel A. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Kitis, George [Nuclear Physics Laboratory, Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2017-06-01

    The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

  10. Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

    International Nuclear Information System (INIS)

    Oniya, Ebenezer O.; Polymeris, George S.; Jibiri, Nnamdi N.; Tsirliganis, Nestor C.; Babalola, Israel A.; Kitis, George

    2017-01-01

    The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

  11. Thermal Annealing Effect on Optical Properties of Binary TiO2-SiO2 Sol-Gel Coatings

    Directory of Open Access Journals (Sweden)

    Xiaodong Wang

    2012-12-01

    Full Text Available TiO2-SiO2 binary coatings were deposited by a sol-gel dip-coating method using tetrabutyl titanate and tetraethyl orthosilicate as precursors. The structure and chemical composition of the coatings annealed at different temperatures were analyzed by Raman spectroscopy and Fourier Transform Infrared (FTIR spectroscopy. The refractive indices of the coatings were calculated from the measured transmittance and reflectance spectra. An increase in refractive index with the high temperature thermal annealing process was observed. The Raman and FTIR results indicate that the refractive index variation is due to changes in the removal of the organic component, phase separation and the crystal structure of the binary coatings.

  12. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  13. A Rapid and Low-Cost PCR Thermal Cycler for Low Resource Settings.

    Directory of Open Access Journals (Sweden)

    Grace Wong

    Full Text Available Many modern molecular diagnostic assays targeting nucleic acids are typically confined to developed countries or to the national reference laboratories of developing-world countries. The ability to make technologies for the rapid diagnosis of infectious diseases broadly available in a portable, low-cost format would mark a revolutionary step forward in global health. Many molecular assays are also developed based on polymerase chain reactions (PCR, which require thermal cyclers that are relatively heavy (>20 pounds and need continuous electrical power. The temperature ramping speed of most economical thermal cyclers are relatively slow (2 to 3 °C/s so a polymerase chain reaction can take 1 to 2 hours. Most of all, these thermal cyclers are still too expensive ($2k to $4k for low-resource setting uses.In this article, we demonstrate the development of a low-cost and rapid water bath based thermal cycler that does not require active temperature control or continuous power supply during PCR. This unit costs $130 to build using commercial off-the-shelf items. The use of two or three vacuum-insulated stainless-steel Thermos food jars containing heated water (for denaturation and annealing/extension steps and a layer of oil on top of the water allow for significantly stabilized temperatures for PCR to take place. Using an Arduino-based microcontroller, we automate the "archaic" method of hand-transferring PCR tubes between water baths.We demonstrate that this innovative unit can deliver high speed PCR (17 s per PCR cycle with the potential to go beyond the 1,522 bp long amplicons tested in this study and can amplify from templates down to at least 20 copies per reaction. The unit also accepts regular PCR tubes and glass capillary tubes. The PCR efficiency of our thermal cycler is not different from other commercial thermal cyclers. When combined with a rapid nucleic acid detection approach, the thermos thermal cycler (TTC can enable on-site molecular

  14. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  15. Thermal defect annealing of swift heavy ion irradiated ThO2

    Science.gov (United States)

    Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

    2017-08-01

    Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

  16. Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 2. Detailed technical description of the work. Final report

    International Nuclear Information System (INIS)

    Mager, T.R.

    1982-11-01

    Program materials were three weldments fabricated from A533 Grade B class 1 plate material and Mn Mo Ni weld wire. Specimens fabricated from the three submerged arc weldments included Type A Charpy V-notch impact, small size tensile, and 1/2T compact tension specimens. After encapsulation, the specimens were irradiated at the UVAR to two fluence levels, 8 x 10 18 n/cm 2 and 1.5 x 10 19 n/cm 2 (E > 1 MeV). Specimens were subjected to sequences of irradiation and anneals and then tested. Metallurgial/mechanistic analyses were also performed. It was concluded that excellent recovery of all properties could be achieved by annealing at greater than or equal to 850 0 F (454 0 C) for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the expected rate. Several drawbacks were identified for wet thermal annealing. A conceptual dry in-situ thermal annealing procedure was developed for thermal annealing embrittled reactor vessels

  17. Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

    Directory of Open Access Journals (Sweden)

    Valeria Bragaglia

    2017-08-01

    Full Text Available A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111 oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

  18. The influence of thermal annealing on structure and oxidation of iron nanowires

    Directory of Open Access Journals (Sweden)

    Krajewski Marcin

    2015-03-01

    Full Text Available Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic field. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta. At higher Ta, hematite was the dominant phase in the nanowires.

  19. Instantons in Quantum Annealing: Thermally Assisted Tunneling Vs Quantum Monte Carlo Simulations

    Science.gov (United States)

    Jiang, Zhang; Smelyanskiy, Vadim N.; Boixo, Sergio; Isakov, Sergei V.; Neven, Hartmut; Mazzola, Guglielmo; Troyer, Matthias

    2015-01-01

    Recent numerical result (arXiv:1512.02206) from Google suggested that the D-Wave quantum annealer may have an asymptotic speed-up than simulated annealing, however, the asymptotic advantage disappears when it is compared to quantum Monte Carlo (a classical algorithm despite its name). We show analytically that the asymptotic scaling of quantum tunneling is exactly the same as the escape rate in quantum Monte Carlo for a class of problems. Thus, the Google result might be explained in our framework. We also found that the transition state in quantum Monte Carlo corresponds to the instanton solution in quantum tunneling problems, which is observed in numerical simulations.

  20. Investigation of stacked elemental layers for Cu(In,Ga)Se{sub 2} thin film preparation by rapid thermal selenization

    Energy Technology Data Exchange (ETDEWEB)

    Stroth, Christiane; Ohland, Joerg; Mikolajczak, Ulf; Madena, Thomas; Keller, Jan; Parisi, Juergen; Hammer, Maria; Riedel, Ingo [Energy and Semiconductor Research Laboratory, Department of Physics, University of Oldenburg, 26111 Oldenburg (Germany)

    2013-07-01

    Rapid thermal selenization of pure metallic (Cu-In-Ga) or selenium-containing (Cu-In-Ga-Se) precursors is a favorable method to fabricate Cu(In,Ga)Se{sub 2} absorber films for application in thin film solar cells. Because of its upscaling potential and the short process time it is a promising approach for the fabrication of CIGSe photovoltaic modules on industrial scale. As a preliminary work for prospective plasma-enhanced selenization of stacked elemental layers (SEL) the elements copper, indium and gallium were sequentially deposited on molybdenum coated soda-lime glass by thermal evaporation. The stacking order was varied and the precursors were annealed with different heating rates. Morphology, elemental depth distribution and phases of the layers were investigated before and after annealing using scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction. Furthermore the influence of different heating rates on phase transitions during annealing was studied by in-situ X-ray diffraction.

  1. 1-Dimensional simulation of thermal annealing in a commercial nuclear power plant reactor pressure vessel wall section

    International Nuclear Information System (INIS)

    Nakos, J.T.; Rosinski, S.T.; Acton, R.U.

    1994-11-01

    The objective of this work was to provide experimental heat transfer boundary condition and reactor pressure vessel (RPV) section thermal response data that can be used to benchmark computer codes that simulate thermal annealing of RPVS. This specific protect was designed to provide the Electric Power Research Institute (EPRI) with experimental data that could be used to support the development of a thermal annealing model. A secondary benefit is to provide additional experimental data (e.g., thermal response of concrete reactor cavity wall) that could be of use in an annealing demonstration project. The setup comprised a heater assembly, a 1.2 in x 1.2 m x 17.1 cm thick [4 ft x 4 ft x 6.75 in] section of an RPV (A533B ferritic steel with stainless steel cladding), a mockup of the open-quotes mirrorclose quotes insulation between the RPV and the concrete reactor cavity wall, and a 25.4 cm [10 in] thick concrete wall, 2.1 in x 2.1 in [10 ft x 10 ft] square. Experiments were performed at temperature heat-up/cooldown rates of 7, 14, and 28 degrees C/hr [12.5, 25, and 50 degrees F/hr] as measured on the heated face. A peak temperature of 454 degrees C [850 degrees F] was maintained on the heated face until the concrete wall temperature reached equilibrium. Results are most representative of those RPV locations where the heat transfer would be 1-dimensional. Temperature was measured at multiple locations on the heated and unheated faces of the RPV section and the concrete wall. Incident heat flux was measured on the heated face, and absorbed heat flux estimates were generated from temperature measurements and an inverse heat conduction code. Through-wall temperature differences, concrete wall temperature response, heat flux absorbed into the RPV surface and incident on the surface are presented. All of these data are useful to modelers developing codes to simulate RPV annealing

  2. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  3. Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Remeš, Zdeněk; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Kormunda, M.

    2017-01-01

    Roč. 640, č. 10 (2017), s. 52-59 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR(CZ) GA14-05053S; GA MŠk LM2015056 Institutional support: RVO:61389005 ; RVO:68378271 Keywords : NiO * ion beam sputtering * thermal annealing * nuclear analytical methods * optical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Coating and films; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 1.879, year: 2016

  4. Optical and photoelectric properties of nanolamellar structures obtained by thermal annealing of InSe plates in Zn vapours

    Energy Technology Data Exchange (ETDEWEB)

    Untila, Dumitru; Evtodiev, Igor [Faculty of Physics and Engineering, Moldova State University, Chisinau (Moldova, Republic of); Ghitu Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of); Caraman, Iuliana [Engineering Department ' ' Vasile Alecsandri' ' , University of Bacau (Romania); Spalatu, Nicolae [Department of Materials Science, Tallinn University of Technology (Estonia); Dmitroglo, Liliana; Caraman, Mihail [Faculty of Physics and Engineering, Moldova State University, Chisinau (Moldova, Republic of)

    2018-02-15

    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman-Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe-InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS-NIR spectral region. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  6. Thermal annealing of carbon nanotubes reveals a toxicological impact of the structural defects

    Energy Technology Data Exchange (ETDEWEB)

    Figarol, Agathe, E-mail: figarol@emse.fr [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France); Pourchez, Jérémie, E-mail: pourchez@emse.fr [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Boudard, Delphine [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Forest, Valérie [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Berhanu, Sarah [Armines - Mines ParisTech, Centre des Matériaux, CNRS UMR 7633 (France); Tulliani, Jean-Marc [Politecnico di Torino, Department of Applied Science and Technology (Italy); Lecompte, Jean-Pierre [Centre Européen de la céramique CNRS: UMR 7315, SPCTS (France); Cottier, Michèle [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Bernache-Assollant, Didier [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Grosseau, Philippe [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France)

    2015-04-15

    The biological response to pristine and annealed multi-walled carbon nanotubes (MWCNT) was assessed on murine macrophages (RAW 264.7). First, the physicochemical features of the as-produced MWCNT and annealed at 2125 °C for 1 h were fully characterized. A decrease in structural defects, hydrophobicity and catalytic impurities was detected after annealing. Thereafter, their impact on cytotoxicity, oxidative stress, and pro-inflammatory response was investigated at concentrations ranging from 15 to 120 µg mL{sup −1}. No effect of the 2125 °C treatment was detected on the cytotoxicity. In contrast, the annealed carbon nanotubes showed a significant increase of the pro-inflammatory response. We assumed that this behavior was due to the reduction in structural defects that may modify the layer of adsorbed biomolecules. Surprisingly, the purification of metallic catalysts did not have any significant impact on the oxidative stress. We suggested that the structural improvements from the 2125 °C treatment can decrease the carbon nanotube scavenging capacity and thus allow a higher free radical release which may counterbalance the decrease of oxidative stress due to a lower content of metallic impurities.

  7. Interlayer growth in Mo/B4C multilayered structures upon thermal annealing

    International Nuclear Information System (INIS)

    Nyabero, S. L.; Kruijs, R. W. E. van de; Yakshin, A. E.; Zoethout, E.; Bosgra, J.; Loch, R. A.; Blanckenhagen, G. von; Bijkerk, F.

    2013-01-01

    Both multilayer period thickness expansion and compaction were observed in Mo/B 4 C multilayers upon annealing, and the physical causes for this were explored in detail. Using in situ time-dependent grazing incidence X-ray reflectometry, period changes down to picometer-scale were resolved. It was shown that the changes depend on the thickness of the B 4 C layers, annealing temperature, and annealing time. Although strong stress relaxation during annealing was observed, it was excluded as a cause for period expansion. Auger electron spectroscopy and wide angle X-ray diffraction measurements revealed the growth of interlayers, with associated period changes influenced by the supply of B and C atoms to the growing compound interlayers. For multilayers with a Mo thickness of 3 nm, two regimes were recognized, depending on the deposited B 4 C thickness: in multilayers with B 4 C ≤ 1.5 nm, the supply of additional Mo into the already formed MoB x C y interlayer was dominant and led to densification, resulting in period compaction. For multilayers with B 4 C ≥ 2 nm, the B and C enrichment of interlayers formed low density compounds and yielded period expansion.

  8. Temperature dependent rapid annealing effect induces amorphous aggregation of human serum albumin.

    Science.gov (United States)

    Ishtikhar, Mohd; Ali, Mohd Sajid; Atta, Ayman M; Al-Lohedan, Hammad; Badr, Gamal; Khan, Rizwan Hasan

    2016-01-01

    This study represents an analysis of the thermal aggregation of human serum albumin (HSA) induced by novel rosin modified compounds. The aggregation process causes conformational alterations in the secondary and tertiary structures of the proteins. The conversion of globular protein to amorphous aggregates was carried out by spectroscopic, calorimetric and microscopic techniques to investigate the factors that are responsible for the structural, conformational and morphological alteration in the protein. Our outcome results show that the aggregation of HSA was dependent on the hydrophobicity, charge and temperature, because the formation of amorphous aggregates occurs in the presence of a novel cationic rosin compound, quaternary amine of rosin diethylaminoethyl ester (QRMAE), at 40°C and pH 7.4 (but at 25°C on similar pH value, there was no evidence of aggregate formation). In addition, the parent compound of QRMAE, i.e., abietic acid, and other derivatives such as nonionic rosin compounds [(RMPEG-750) and (RMA-MPEG-750)] do not shows the aggregating property. This work provides precise and necessary information that aid in the understanding the effects of rosin derivative compounds on HSA. This study also restrains important information for athletes, health providers, pharmaceutical companies, industries, and soft drink-processing companies. Copyright © 2015 Elsevier B.V. All rights reserved.

  9. Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

    Energy Technology Data Exchange (ETDEWEB)

    Byrne, C., E-mail: conor.byrne2@mail.dcu.ie [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Brady, A.; Walsh, L.; McCoy, A.P.; Bogan, J. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McGlynn, E. [School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland); Rajani, K.V. [School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland)

    2016-01-29

    A copper–aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO{sub 2}/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO{sub 2} interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk. - Highlights: • CuAl alloy (90%:Al 10% wt) deposited and vacuum annealed • XPS and SIMS data show segregation of Al from the alloy bulk. • Chemical changes seen indicate the reduction of Cu oxide and growth of Al Oxide. • Electrical measurements indicate a chemical change at the metal/SiO{sub 2} interface. • All data consistent with Cu diffusion barrier layer formed.

  10. A novel temperature control method for shortening thermal cycling time to achieve rapid polymerase chain reaction (PCR) in a disposable polymer microfluidic device

    DEFF Research Database (Denmark)

    Bu, Minqiang; R. Perch-Nielsen, Ivan; Sørensen, Karen Skotte

    steps to achieve a rapid ramping between the temperature steps for DNA denaturation, annealing and extension. The temperature dynamics within the microfluidic PCR chamber was characterized and the overshooting and undershooting parameters were optimized using the temperature dependent fluorescence......We present a new temperature control method capable of effectively shortening the thermal cycling time of polymerase chain reaction (PCR) in a disposable polymer microfluidic device with external heater and temperature sensor. The method employs optimized temperature overshooting and undershooting...

  11. A temperature control method for shortening thermal cycling time to achieve rapid polymerase chain reaction (PCR) in a disposable polymer microfluidic device

    DEFF Research Database (Denmark)

    Bu, Minqiang; Perch-Nielsen, Ivan R.; Sørensen, Karen Skotte

    2013-01-01

    steps to achieve a rapid ramping between the temperature steps for DNA denaturation, annealing and extension. The temperature dynamics within the microfluidic PCR chamber was characterized and the overshooting and undershooting parameters were optimized using the temperature-dependent fluorescence......We present a temperature control method capable of effectively shortening the thermal cycling time of polymerase chain reaction (PCR) in a disposable polymer microfluidic device with an external heater and a temperature sensor. The method employs optimized temperature overshooting and undershooting...

  12. Rapid thermal transient in a reactor coolant channel

    International Nuclear Information System (INIS)

    Cherubini, A.

    1986-01-01

    This report deals with the problem of one-dimensional thermo-fluid-dynamics in a reactor coolant channel, with the aim of determining the evolution in time of the coolant (H*L2O), in one-and/or two-phase regimes, subjected to a great and rapid increase in heat flux (accident conditions). To this aim, the following are set out: a) the physical model used; b) the equations inherent in the above model; c) the numerical methods employed to solve them by means of a computer programme called CABO (CAnale BOllente). Next a typical problem of rapid thermal transient resolved by CABO is reported. The results obtained, expressed in form of graphs, are fully discussed. Finally comments on possible developments of CABO follow

  13. Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lifei Yang

    2015-01-01

    Full Text Available Graphene-silicon (Gr-Si Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance, we point out that this phenomenon is caused by the natural doping effect of the Gr film.

  14. The influence of thermal annealing on the characteristics of different AL2O3 thermoluminescence dosimeters

    International Nuclear Information System (INIS)

    Ranogajec-Komor, M.; Vincekovic, M.; Knezevic, Z.; Miljanic, S.

    2002-01-01

    The manufacturers of TL detectors usually recommend the annealing temperature and time, however they do not give instructions about the heating and cooling rates. From the aspect of practical routine work, every laboratory has to find the optimum heating and cooling method. In this work the influence of various parameters of annealing on the properties of TL dosimeters (sensitivity, reproducibility, the shape of the glow curve) was investigated. Various Al 2 O 3 :dosimeters were used. The TL dosimeters based on Al 2 O 3 can be used in different dose ranges depending on the crystal structure of the dosimeter material as well as the kind and concentration of the activator. In this work Al 2 O 3 :C 4 and Al 2 O 3 :Mg,Y with 0.5% and 1% of activator were investigated

  15. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    International Nuclear Information System (INIS)

    Burke, M.G.; Freyer, P.D.; Mager, T.R.

    1993-01-01

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ''precipitation-type'' and a ''damage-type'' component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs

  16. Thermoluminiscence and thermal annealing of F centres in KCL gamma irradiated

    International Nuclear Information System (INIS)

    Ausin Alonso, Vicente.

    1976-01-01

    The thermoluminiscence spectrum and phosphorescence decays of Harshaw KCl samples gamma irradiated at room temperature have been studied up to 400 0 C. For the six peaks found, the order of recombination kinetics, the pre-exponential factor and the activation energy have been obtained. It has been observed that the area under the thermoluminiscence curve is always proportional to the F centre concentration in the sample before heating. It was also found that there is an annealing step of F centres corresponding to each thermoluminiscence peak, when the temperature of the sample is raised at a constant rate. It is concluded that the F centres play the role of recombination centres in the annealing process, the interstitials being the mobile entities moving towards there combination centre. At some stage in the process light is emitted. (author)

  17. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Burke, M G; Freyer, P D; Mager, T R

    1994-12-31

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ``precipitation-type`` and a ``damage-type`` component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs.

  18. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Fernández-Delgado, N., E-mail: natalia.fernandezdelgado@alum.uca.es [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Herrera, M. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Chisholm, M.F. [Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN (United States); Kamarudin, M.A. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor (Malaysia); Zhuang, Q.D.; Hayne, M. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Molina, S.I. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing. • The density of misfit dislocations in GaSb QDs is reduced after the annealing. • Threading dislocations in GaSb/GaAs QDs are Sb-rich after the thermal annealing. • The gliding of a threading dislocation favors Sb diffusion in GaSb/GaAs QDs. - Abstract: In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

  19. Evolution of lateral ordering in symmetric block copolymer thin films upon rapid thermal processing

    International Nuclear Information System (INIS)

    Ceresoli, Monica; Ferrarese Lupi, Federico; Seguini, Gabriele; Perego, Michele; Sparnacci, Katia; Gianotti, Valentina; Antonioli, Diego; Laus, Michele; Boarino, Luca

    2014-01-01

    This work reports experimental findings about the evolution of lateral ordering of lamellar microdomains in symmetric PS-b-PMMA thin films on featureless substrates. Phase separation and microdomain evolution are explored in a rather wide range of temperatures (190–340 °C) using a rapid thermal processing (RTP) system. The maximum processing temperature that enables the ordering of block copolymers without introducing any significant degradation of macromolecules is identified. The reported results clearly indicate that the range of accessible temperatures in the processing of these self-assembling materials is mainly limited by the thermal instability of the grafted random copolymer layer, which starts to degrade at T > 300 °C, inducing detachment of the block copolymer thin film. For T ⩽ 290 °C, clear dependence of correlation length (ξ) values on temperature is observed. The highest level of lateral order achievable in the current system in a quasi-equilibrium condition was obtained at the upper processing temperature limit after an annealing time as short as 60 s. (paper)

  20. Study of defects created in silicon during thermal annealings - Correlation with the presence of oxygen

    International Nuclear Information System (INIS)

    Olivier, Michel

    1975-01-01

    Defects generation and precipitation phenomena in Czochralski silicon crystals annealed ten of hours at 1000 C have been observed. The defects (perfect dislocation loops emitted by semi-coherent precipitates, Frank loops in correlation with coherent precipitates) are studied by Transmission Electron Microscopy, X-Ray Topography and chemical etching. The generation of defects is connected to the precipitation of interstitial oxygen as it is shown by studying the infrared absorption at 9 μm. We present a lot of experimental results which indicates that the precipitates are SiO 2 clusters; in particular, we show that this hypothesis can explain the presence, after annealing, of an infrared absorption band at 8,2 μm. Some results on Czochralski silicon crystals annealed at 1150 deg. C and 1250 deg. C are then presented. In particular, X-Ray Topography studies show the presence of large (∼100 μm) Frank loops which seem connected to oxygen precipitation. (author) [fr

  1. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    International Nuclear Information System (INIS)

    Mtangi, W.; Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van; Nyamhere, C.

    2012-01-01

    Highlights: ► Highly rectifying Pd/ZnO contacts have been fabricated. ► The rectification behaviour decrease with annealing temperature. ► The surface donor concentration increases with increase in annealing temperature. ► The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current–voltage (IV) and capacitance–voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at −1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 ± 0.03) eV after annealing at 550 °C. The reverse current has been measured as (2.10 ± 0.01) × 10 −10 A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 °C to (1.56 ± 0.01) × 10 −5 A. The depletion layer width measured at −2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 μm after annealing at 200 °C to 0.24 μm after annealing at 500 °C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 × 10 15 cm −3 at 200 °C to 6.06 × 10 16 cm −3 after annealing at 550 °C. This increase in the volume concentration has been explained as an effect of a conductive channel that shifts closer to the surface after sample annealing. The series resistance has been observed to decrease with increase in annealing temperature. The Pd contacts have shown high stability up to an annealing temperature of 250 °C as revealed by the IV

  2. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Nyamhere, C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Highly rectifying Pd/ZnO contacts have been fabricated. Black-Right-Pointing-Pointer The rectification behaviour decrease with annealing temperature. Black-Right-Pointing-Pointer The surface donor concentration increases with increase in annealing temperature. Black-Right-Pointing-Pointer The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 {+-} 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 {+-} 0.03) eV after annealing at 550 Degree-Sign C. The reverse current has been measured as (2.10 {+-} 0.01) Multiplication-Sign 10{sup -10} A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 Degree-Sign C to (1.56 {+-} 0.01) Multiplication-Sign 10{sup -5} A. The depletion layer width measured at -2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 {mu}m after annealing at 200 Degree-Sign C to 0.24 {mu}m after annealing at 500 Degree-Sign C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 Multiplication-Sign 10{sup 15} cm{sup -3} at 200 Degree-Sign C to 6.06 Multiplication-Sign 10{sup 16} cm{sup -3} after annealing at 550 Degree-Sign C. This increase in the volume concentration has been explained as an effect of a conductive channel

  3. Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

    Directory of Open Access Journals (Sweden)

    Aleksandr V. Mazalov

    2016-06-01

    The effect of thermal annealing of GaN:Mg layers on acceptor impurity activation has been investigated. Hole concentration increased and mobility decreased with an increase in thermal annealing temperature. The sample annealed at 1000 °C demonstrated the lowest value of resistivity. Rapid thermal annealing (annealing with high heating speed considerably improved the efficiency of Mg activation in the GaN layers. The optimum time of annealing at 1000 °C has been determined. The hole concentration increased by up to 4 times compared to specimens after conventional annealing.

  4. Adaptive multiparameter control: application to a Rapid Thermal Processing process; Commande Adaptative Multivariable: Application a un Procede de Traitement Thermique Rapide

    Energy Technology Data Exchange (ETDEWEB)

    Morales Mago, S J

    1995-12-20

    In this work the problem of temperature uniformity control in rapid thermal processing is addressed by means of multivariable adaptive control. Rapid Thermal Processing (RTP) is a set of techniques proposed for semiconductor fabrication processes such as annealing, oxidation, chemical vapour deposition and others. The product quality depends on two mains issues: precise trajectory following and spatial temperature uniformity. RTP is a fabrication technique that requires a sophisticated real-time multivariable control system to achieve acceptable results. Modelling of the thermal behaviour of the process leads to very complex mathematical models. These are the reasons why adaptive control techniques are chosen. A multivariable linear discrete time model of the highly non-linear process is identified on-line, using an identification scheme which includes supervisory actions. This identified model, combined with a multivariable predictive control law allows to prevent the controller from systems variations. The control laws are obtained by minimization of a quadratic cost function or by pole placement. In some of these control laws, a partial state reference model was included. This reference model allows to incorporate an appropriate tracking capability into the control law. Experimental results of the application of the involved multivariable adaptive control laws on a RTP system are presented. (author) refs

  5. Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Daoyun, E-mail: zhudy@gdut.edu.cn [Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Zhao, Shoubai [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510400 (China); Zheng, Changxi; Chen, Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Zhenhui, E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2013-12-16

    MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg{sup 2+} or O{sup 2-} to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M{sub (100)} = 199 GPa, M{sub (110)} = 335 GPa and M{sub (111)} = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments. - Highlights: • MgO thin films with preferred orientation were obtained by CVAD technique. • Annealing effect of a thermal spike in MgO film was discussed. • Lattice spacing of MgO film decreased with the increase of bias voltage. • Film preferred orientation changed from (200) to (220) as the bias voltage increased.

  6. Enhanced light emission efficiency and current stability by morphology control and thermal annealing of organic light emitting diode devices

    Energy Technology Data Exchange (ETDEWEB)

    Caria, S [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Como, E Da [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Murgia, M [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Zamboni, R [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Melpignano, P [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy); Biondo, V [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy)

    2006-08-23

    The electro-optical behaviour of organic light emitting diode devices (OLEDs) is greatly influenced by the morphology of the films. A major parameter is due to the important role that the morphology of the active organic thin films plays in the phenomena that lead to light emission. For vacuum-grown OLEDs, the morphology of the specific thin films can be varied by modification of the deposition conditions. We have assessed the method (ultrahigh-vacuum organic molecular beam deposition) and conditions (variation of the deposition rate) for electro-emission (EL) optimization in a standard {alpha}-NPB (N,N'-bis-(1-naphthyl)-N,N' diphenyl-1,1' biphenyl-4-4' diamine)/Alq3 (tris-(8-hydroxyquinoline) aluminium) vacuum-grown OLED device. The best EL performances have been obtained for OLEDs made in ultrahigh vacuum with the Alq3 layer deposited with a differential deposition rate ranging from 1.0 to 0.3Angsts{sup -1}. The results are consistent with a model of different Alq3 morphologies, allowing efficient charge injection at the metal/organic interface, and of the minimization of grain boundaries at the electron-hole recombination interface, allowing efficient radiative excitonic decay. At the same time, with the objective of controlling and stabilizing the morphology changes and stabilizing the charge transport over a long OLED operating time, we have studied the effect of thermal annealing processing in the standard current behaviour of OLEDs. The large current fluctuations typically observed for standard vacuum-grown OLEDs have been smeared out and kept constant over a long operating time by the given thermal annealing conditions. The results are interpreted in terms of the stabilization of intrinsic polymorphism of the organic film's structure induced by thermal energy and leading the morphology to a lowest-energetic configuration.

  7. Characterization of damaging in apatitic materials irradiated with heavy ions and thermally annealed

    International Nuclear Information System (INIS)

    Tisserand, R.

    2004-12-01

    Some minerals belonging to the family of apatite are seen to be potential candidates for use as conditioning matrices or transmutation targets for high level nuclear waste management. Indeed, studies of natural nuclear reactors (Oklo) highlighted the strong ability of these minerals to anneal irradiation damage. In order to determine the global behaviour of these materials, we performed a fundamental study on the evolution of irradiation damage induced by various heavy ions in two apatites: a natural phospho-calcic fluor-apatite from Durango and a synthetic sintered mono-silicated fluor-apatite, called britholite. The damage in these materials was measured by using channelling R.B.S. and X-ray diffraction respectively and by determining an amorphization effective radius Re. The results revealed a similar behaviour for both apatites according to the electronic energy deposit at the entrance of the material. In addition, the effect of an isothermal annealing at 300 C was quantified on a mono-silicated britholite previously irradiated with Kr ions. We highlighted in this case the return of the lattice parameters to their initial values, followed by a partial and slow rebuilding of the crystalline lattice versus the annealing time. Finally, we followed the changes in the morphology of etch pits in the Durango fluor-apatite after acid dissolution as a function of the energy deposit by the ions. We showed that the influence of crystallography leads quickly to opening angles close to 30 degrees. The calculation of etching velocities within the irradiated material highlighted that there is a range of deposit energy where the velocity ratio increases strongly before becoming constant. (author)

  8. Continuous anneal method for characterizing the thermal stability of ultraviolet Bragg gratings

    DEFF Research Database (Denmark)

    Rathje, Jacob; Kristensen, Martin; Pedersen, Jens Engholm

    2000-01-01

    We present a new method for determining the long-term stability of UV-induced fiber Bragg gratings. We use a continuous temperature ramp method in which systematic variation of the ramp speed probes both the short- and long-term stability. Results are obtained both for gratings written in D2 loaded...... we resolve two separate energy distributions, suggesting that two different defects are involved. The experiments show that complicated decays originating from various energy distributions can be analyzed with this continuous isochronal anneal method. The results have both practical applications...

  9. Thermal effect on structural and magnetic properties of Fe78B13Si9 annealed amorphous ribbons

    Science.gov (United States)

    Soltani, Mohamed Larbi; Touares, Abdelhay; Aboki, Tiburce A. M.; Gasser, Jean-Georges

    2017-08-01

    In the present work, we study the influence of thermal treatments on the magnetic properties of as-quenched and pre-crystallized Fe78Si9B13 after stress relaxation. The crystallization behavior of amorphous and treated Fe78Si9B13 ribbons was revisited. The measurements were carried out by means of Differential Scanning Calorimetry, by X-ray diffraction and by Vibrating Sample Magnetometer, Susceptometer and fluxmeter. Relaxed samples were heated in the resistivity device up to 700°C and annealed near the onset temperature about 420°C for respectively 1, 3, 5, 8 hours. In as-quenched samples, two transition points occur at about 505°C and 564°C but in relaxed sample, the transition points have been found about 552°C and 568°C. Kinetics of crystallization was deduced for all studied samples. Annealing of the as-purchased ribbon shows the occurrence of α-Fe and tetragonal Fe3B resulting from the crystallization of the remaining amorphous phase. The effects on magnetic properties were pointed out by relating the structural evolution of the samples. The magnetic measurements show that annealing change the saturation magnetization and the coercive magnetic field values, hence destroying the good magnetic properties of the material. The heat treatment shows that the crystallization has greatly altered the shape of the cycles and moved the magnetic saturation point of the samples. The effect of treatment on the magneto-crystalline anisotropy is also demonstrated.

  10. Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell

    Directory of Open Access Journals (Sweden)

    Dimopoulos T.

    2014-07-01

    Full Text Available Heterojunction solar cells were fabricated by electrochemical deposition of p-type, cuprous oxide (Cu2O absorber on sputtered, n-type ZnO layer. X-ray diffraction measurements revealed that the as-deposited absorber consists mainly of Cu2O, but appreciable amounts of metallic Cu and cupric oxide (CuO are also present. These undesired oxidation states are incorporated during the deposition process and have a detrimental effect on the photovoltaic properties of the cells. The open circuit voltage (VOC, short circuit current density (jSC, fill factor (FF and power conversion efficiency (η of the as-deposited cells are 0.37 V, 3.71 mA/cm2, 35.7% and 0.49%, respectively, under AM1.5G illumination. We show that by thermal annealing in vacuum, at temperatures up to 300 °C, compositional purity of the Cu2O absorber could be obtained. A general improvement of the heterojunction and bulk materials quality is observed, reflected upon the smallest influence of the shunt and series resistance on the transport properties of the cells in dark and under illumination. Independent of the annealing temperature, transport is dominated by the space-charge layer generation-recombination current. After annealing at 300 °C the solar cell parameters could be significantly improved to the values of: VOC = 0.505 V, jSC = 4.67 mA/cm2, FF = 47.1% and η = 1.12%.

  11. Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

    International Nuclear Information System (INIS)

    Liu Wen-Feng; Zhang Min-Gang; Zhang Ke-Wei; Zhang Hai-Jie; Chai Yue-Sheng; Xu Xiao-Hong

    2016-01-01

    Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. (paper)

  12. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  13. Evolution of free volume in ultrasoft magnetic FeZrN films during thermal annealing

    NARCIS (Netherlands)

    Chechenin, NG; van Veen, A; Schut, H; Chezan, AR; Boerma, DO; Vystavel, T; De Hosson, JTM; DeHaven, PW; Field, DP; Harkness, SD; Sutliff, JA; Szpunar, JA; Tang, L; Thomson, T; Vaudin, MD

    2002-01-01

    The thermal stability of nanocrystalline ultra-soft magnetic (Fe98Zr2)(1-x)N-x films with x=0.10-0.25 was studied using high-resolution transmission electron microscopy (HRTEM), positron beam analysis (PBA) and thermal desorption spectrometry (TDS). The results demonstrate that grain growth during

  14. The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

    Science.gov (United States)

    Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

    2018-05-01

    The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

  15. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  16. Effect of thermal annealing on the microstructures and photocatalytic performance of silver orthophosphate: The synergistic mechanism of Ag vacancies and metallic Ag

    International Nuclear Information System (INIS)

    Yan, Tingjiang; Guan, Wenfei; Xiao, Ying; Tian, Jun; Qiao, Zheng; Zhai, Huishan; Li, Wenjuan; You, Jinmao

    2017-01-01

    Highlights: • Ag_3PO_4 was initially prepared via ion-exchange reaction and then annealed in air. • Thermal annealing also resulted in the formation of metallic Ag and Ag vacancies. • The annealed samples exhibited superior activity to the pristine sample. • Both Ag vacancies and metallic Ag contributed to the high activity. - Abstract: In this work, a simple thermal annealing route has been developed to improve the photocatalytic performance of silver orthophosphate (Ag_3PO_4) photocatalyst toward organic pollutants degradation under visible light irradiation. The experimental results indicated that thermal treatment of Ag_3PO_4 led to an obvious lattice shift towards right and significantly narrowed band gap energies due to the formation of Ag vacancies and metallic Ag during Ag_3PO_4 decomposition. These structural variations notably affected the photocatalytic performance of Ag_3PO_4 photocatalysts. The activity of the annealed samples was found to be significantly enhanced toward the degradation of MO dye. The highest activity was observed over the sample annealed at 400 °C, which exceeded that of pristine Ag_3PO_4 by a factor of about 21 times. By means of photoluminescence spectroscopy and photoelectrochemical measurements, we propose that the enormous enhancement in activity was mainly attributed to the efficient separation of photogenerated electrons and holes driven by the synergistic effect of Ag vacancies and metallic Ag. The strong interaction between annealed particles also inhibited the dissolution of Ag"+ from Ag_3PO_4 into aqueous solution, contributing to an improved photocatalytic stability. The strategy presented here provides an ideal platform for the design of other highly efficient and stable Ag-based photocatalysts for broad applications in the field of photocatalysis.

  17. Thermal-annealing effects on the structural and magnetic properties of 10% Fe-doped SnO{sub 2} nanoparticles synthetized by a polymer precursor method

    Energy Technology Data Exchange (ETDEWEB)

    Aragón, F.H., E-mail: fermin964@hotmail.com [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); Coaquira, J.A.H. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Nagamine, L.C.C.M.; Cohen, R. [Instituto de Física, Universidade de São Paulo, São Paulo SP 05508-090 (Brazil); Silva, S.W. da [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); and others

    2015-02-01

    In this work, we present the experimental results of Sn{sub 0.9}Fe{sub 0.1}O{sub 2} nanoparticles synthesized by a polymer precursor method. Studies were performed in the as-prepared (AP) and thermally-annealed (TA) samples. The X-ray diffraction (XRD) data analysis carried out using the Rietveld refinement method shows the formation of only the rutile-type structure in the AP sample and this phase remains stable for the TA sample. Additionally, the mean crystallite size shows an increase from ∼4 nm to ∼17 nm after the annealing and a clear reduction of the residual strain has also been determined. Micro-Raman spectroscopy measurements show the formation of an iron oxide phase (likely α-Fe{sub 2}O{sub 3}) after the thermal treatment. Magnetic measurements show a paramagnetic behavior for the AP sample and the coexistence of a weak ferromagnetism and paramagnetism for the TA sample. The magnetically-ordered contribution of the TA sample has been assigned to the formation of the hematite phase. DC and AC magnetic features of the TA sample are consistent with a cluster-glass behavior which seems to be related to the magnetic disorder of spins located at the particle surface. Those spins clusters seem to be formed due to the diffusion of iron ions from the core of the particle to the surface caused by the annealing process. - Highlights: • Thermal annealing effects in the 10% Fe-doped SnO{sub 2} nanoparticles have been studied. • XRD data analysis shows the formation of the rutile-type structure. • Raman measurements show the formation of small amount of α-Fe{sub 2}O{sub 3} after the annealing. • Paramagnetic and magnetically ordered phases were determined after the annealing. • Spin clusters likely at the particle surface have been formed after the annealing.

  18. Neutron scattering studies of the phase-transitions of ices by thermal-annealing

    International Nuclear Information System (INIS)

    Wang, Y.; Kolesnikov, A.; Li, J.C.

    1999-01-01

    Complete text of publication follows. Inelastic incoherent neutron scattering was used to study the phase-transition process of high-density amorphous (hda) ice produced by pressurising ice-Ih at 16 kbar and 77 K to low-density amorphous (Ida) ice, ice-Ic and ice-Ih by thermobaric treatments. The results show that when annealing temperature is lower than 136 K no obvious phase-transition was observed and transformation of the hda to the lda ice occurs between 136 and 144 K which is very closed to the theoretically calculated value 135 K (1). Comparing the lda spectrum with the vapour deposited low-density amorphous ice (2) shows a number of differences in the translational and vibrational regions, such as the low energy cut off of the vibrational band. On the other hand, the recovered lda from the hda ice has a similar spectrum as ice-Ih. (author)

  19. Structural Reorganization of CNC in Injection-Molded CNC/PBAT Materials under Thermal Annealing.

    Science.gov (United States)

    Mariano, Marcos; El Kissi, Nadia; Dufresne, Alain

    2016-10-04

    Composite materials were prepared by extrusion and injection molding from polybutyrate adipate terephthalate (PBAT) and high aspect ratio cellulose nanocrystals (CNCs) extracted from capim dourado fibers. Three CNC contents were used, corresponding to 0.5, 1, and 2 times the theoretical percolation threshold. Small-amplitude oscillary shear (SAOS) experiments show that as the CNC content increases, a more elastic behavior is observed but no percolating network can form within the polymeric matrix as a result of the high shear rates involved during the injection-molding process. Annealing of the samples at 170 °C was performed, and the possible reorganization of the nanofiller was investigated. This reorganization was further elucidated using 2D-SAOS and creep experiments.

  20. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  1. Formation of shallow junctions for VLSI by ion implantation and rapid thermal annealing

    International Nuclear Information System (INIS)

    Oeztuerk, M.C.

    1988-01-01

    In this work, several techniques were studied to form shallow junctions in silicon by ion implantation. These include ion implantation through thin layers of silicon dioxide and ion implantation through a thick polycrystalline silicon layer. These techniques can be used to reduce the junction depth. Their main disadvantage is dopant loss in the surface layer. As an alternative, preamorphization of the Si substrate prior to boron implantation to reduce boron channeling was investigated. The disadvantage of preamorphization is the radiation damage introduced into the Si substrate using the implant. Preamorphization by silicon self-implantation has been studied before. The goal of this study was to test Ge as an alternative amorphizing agent. It was found that good-quality p + -n junctions can be formed by both boron and BF 2 ion implantation into Ge-preamorphized Si provided that the preamorphization conditions are optimized. If the amorphous crystalline interface is sufficiently close to the surface, it is possible to completely remove the end-of-range damage. If these defects are not removed and are left in the depletion region, they can result in poor-quality, leaky junctions

  2. Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

    International Nuclear Information System (INIS)

    Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

    2013-01-01

    We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

  3. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  4. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  5. Rapid laboratory investigation of the thermal properties of planetary analogues by using the EXTASE thermal probe.

    Science.gov (United States)

    Nadalini, R.; Extase Team

    The thermal properties of the constituent materials of the upper meters of planets and planetary bodies are of extreme interest. During the design and the verification of various planetary missions, the need to model and test appropriate simulants in laboratory is often raised. To verify the thermal properties of deployed laboratory simulants, the EXTASE thermal probe is a fast, precise, and easy-to-use tool. EXTASE is a thermal profile probe, able to measure the temperature and inject heat into the selected material at 16 different locations along its 45cm long slender cylindrical body. It has been developed following the experience of MUPUS, with the purpose of observing such properties on Earth, in situ and in a short time. We have used EXTASE, under laboratory cold and standard conditions, on several sand mixtures, soils, granular and compact ices, under vacuum and at normal pressure levels, to collect a great number of time- and depth-dependent temperature curves that represent the thermal dynamical response of the material. At the same time, two independent models have been developed to verify the experimental results by reaching the same results with a simulation of the same process. The models, analytical and numerical, which account for all material parameters (conductivity, density, capacity), have been developed and fine tuned until their results are superposed to the experimental curves, thus allowing the determination of the distinct thermal properties. In addition, a test campaign is under planning to use EXTASE to determine, rapidly and efficiently, the thermal properties of various regolith simulants to be used in the simulation of planetary subsurface processes.

  6. Thermal Annealing Effect on Structural, Morphological, and Sensor Performance of PANI-Ag-Fe Based Electrochemical E. coli Sensor for Environmental Monitoring

    Directory of Open Access Journals (Sweden)

    Norshafadzila Mohammad Naim

    2015-01-01

    Full Text Available PANI-Ag-Fe nanocomposite thin films based electrochemical E. coli sensor was developed with thermal annealing. PANI-Ag-Fe nanocomposite thin films were prepared by oxidative polymerization of aniline and the reduction process of Ag-Fe bimetallic compound with the presence of nitric acid and PVA. The films were deposited on glass substrate using spin-coating technique before they were annealed at 300°C. The films were characterized using XRD, UV-Vis spectroscopy, and FESEM to study the structural and morphological properties. The electrochemical sensor performance was conducted using I-V measurement electrochemical impedance spectroscopy (EIS. The sensitivity upon the presence of E. coli was measured in clean water and E. coli solution. From XRD analysis, the crystallite sizes were found to become larger for the samples after annealing. UV-Vis absorption bands for samples before and after annealing show maximum absorbance peaks at around 422 nm–424 nm and 426 nm–464 nm, respectively. FESEM images show the diameter size for nanospherical Ag-Fe alloy particles increases after annealing. The sensor performance of PANI-Ag-Fe nanocomposite thin films upon E. coli cells in liquid medium indicates the sensitivity increases after annealing.

  7. Phase formation kinetics, hardness and magnetocaloric effect of sub-rapidly solidified LaFe11.6Si1.4 plates during isothermal annealing

    Science.gov (United States)

    Dai, Yuting; Xu, Zhishuai; Luo, Zhiping; Han, Ke; Zhai, Qijie; Zheng, Hongxing

    2018-05-01

    High-temperature phase transition behavior and intrinsic brittleness of NaZn13-type τ1 phase in La-Fe-Si magnetocaloric materials are two key problems from the viewpoint of materials production and practical applications. In the present work, the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation was introduced to quantitatively characterize the formation kinetics of τ1 phase in sub-rapidly solidified LaFe11.6Si1.4 plates during the isothermal annealing process. Avrami index was estimated to be 0.43 (∼0.5), which suggests that the formation of τ1 phase is in a diffusion-controlled one-dimensional growth mode. Meanwhile, it is found that the Vickers hardness as a function of annealing time for sub-rapidly solidified plates also agrees well with the JMAK equation. The Vickers hardness of τ1 phase was estimated to be about 754. Under a magnetic field change of 30 kOe, the maximum magnetic entropy change was about 22.31 J/(kg·K) for plates annealed at 1323 K for 48 h, and the effective magnetic refrigeration capacity reached 191 J/kg.

  8. Novel thermal donors generated in Cz silicon by prolonged annealing at 470oC

    International Nuclear Information System (INIS)

    Kamiura, Y.; Hashimoto, F.; Yoneta, M.

    1989-01-01

    A new family of shallower double donors (New TD's) than the normal family of thermal donors (TD's) currently studied has been discovered by DLTS (Deep Level Transient Spectroscopy) and Hall measurements. The both families exhibit qualitatively the same kinetic behaviors at 470 o C, but New TD's have smaller generation rates and higher thermal stability, correlating strongly with the NL10 EPR center. The hypothesis that an unknown nucleus involved in the core of New TD's plays an essential role in lowering their level ionization energies and stabilizing their donor activity is proposed to explain the results. (author) 11 refs., 6 figs

  9. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  10. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  11. Synergic solventing-out crystallization with subsequent time-delay thermal annealing of PbI2 precursor in mesostructured perovskite solar cells

    Science.gov (United States)

    Jia, Fujin; Guo, Yanqun; Che, Lijia; Liu, Zhiyong; Zeng, Zhigang; Cai, Chuanbing

    2018-06-01

    Although the two-step sequential deposition method provides an efficient route to fabricate high performance perovskite solar cells (PSSCs) with increasing reproducibility, the inefficient and incomplete conversion of PbI2 to perovskite is still quite a challenge. Following pioneering works, we found that the conversion process from PbI2 to perovskite mainly involves diffusion, infiltration, contact and reaction. In order to facilitate the conversion from PbI2 to perovskite, we demonstrate an effective method to regulate supersaturation level (the driving force to crystallization) of PbI2 by solventing-out crystallization combining with subsequent time-delay thermal annealing of PbI2 wet film. Enough voids and spaces in resulting porous PbI2 layer will be in favor of efficient diffusion, infiltration of CH3NH3I solution, and further enhance the contact and reaction between PbI2 and CH3NH3I in the whole film, leading to rapid, efficient and complete perovskite conversion with a conversion level of about 99.9%. Enhancement of light harvesting ranging from visible to near-IR region was achieved for the resultant high-quality perovskite. Upon this combined method, the fabricated mesostructured solar cells show tremendous power conversion efficiency (PCE) improvement from 3.2% to about 12.3% with less hysteresis owing to the simultaneous enhancement of short-circuit photocurrent density (J sc), open-circuit voltage (V oc) and fill factor (FF).

  12. Fabrication of sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions with rapid annealing method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Song; Wang, Xu; Ma, Junli; Cui, Ruirui; Deng, Chaoyong, E-mail: cydeng@gzu.edu.cn

    2015-11-15

    Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated using magnetron sputtering system. The rapid-anneal process was adopted to replace traditional way of annealing, trying to solve the problem of interdiffusion and oxidation with multilayer films. The boron film was used as barrier layer to avoid the introduction of impurities and improve reproducibility of the junctions. The bottom MgB{sub 2} thin films deposited on c-plane sapphire substrate exhibits a critical temperature T{sub C} of 37.5 K and critical current density J{sub C} at 5 K of 8.7 × 10{sup 6} A cm{sup −2}. From the XRD pattern, the bottom MgB{sub 2} thin film shows c-axis orientation, whereas the top MgB{sub 2} became polycrystalline as Boron barrier layer grown thicker. Therefore, all junction samples show lower T{sub C} than single MgB{sub 2} thin film. The junctions exhibit excellent quasiparticle characteristics with ideal dependence on temperature and Boron barrier thickness. Subharmonic gap structure was appeared in conductance characteristics, which was attributed to the multiple Andreev reflections (MAR). The result demonstrates great promise of this new fabrication technology for MgB{sub 2} Josephson junction fabrication. - Highlights: • Sandwich-type MgB{sub 2}/Boron/MgB{sub 2} Josephson junctions were fabricated. • The junctions were annealed after deposition with the rapid-anneal process. • The highest critical current is 25.3 mA at 5 K and remains non-zero near 25 K. • Subharmonic gap features can be observed in the dI/dV – V curves.

  13. Synthesis of stoichiometric Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles by high-energy ball milling and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Amorim, B.F.; Morales, M.A.; Bohn, F.; Carriço, A.S. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Medeiros, S.N. de, E-mail: sndemedeiros@gmail.com [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Dantas, A.L. [Departamento de Física, Universidade do Estado do Rio Grande do Norte, 59610-210 Mossoró, RN (Brazil)

    2016-05-01

    We report the synthesis of Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles by high-energy ball milling and thermal annealing from α-Fe{sub 2}O{sub 3} and CaCO{sub 3}. Magnetization measurements, Mössbauer and X-ray spectra reveal that annealing at high temperatures leads to better quality samples. Our results indicate nanoparticles produced by 10 h high-energy ball milling and thermal annealing for 2 h at 1100 °C achieve improved stoichiometry and the full weak ferromagnetic signal of Ca{sub 2}Fe{sub 2}O{sub 5}. Samples annealed at lower temperatures show departure from stoichiometry, with a higher occupancy of Fe{sup 3+} in octahedral sites, and a reduced magnetization. Thermal relaxation for temperatures in the 700–1100 °C range is well represented by a Néel model, assuming a random orientation of the weak ferromagnetic moment of the Ca{sub 2}Fe{sub 2}O{sub 5} nanoparticles.

  14. Solid-state reaction in Fe/V multilayers by ion beam mixing with thermal annealing

    International Nuclear Information System (INIS)

    Borges, J.F.M.; Costa, M.I. da Jr.; Teixeira, S.R.; Cunha, J.B.M. da; Alves, M.C.M.

    2001-01-01

    We report a study on the structural and magnetic properties of iron-vanadium thin films, originally grown in multilayer form [Fe(20 A)/V(20 A)] 20 , and mixed by ion beam mixing (IBM) and a subsequent thermal treatment. The samples were structurally characterised by X-ray diffraction (XRD) in the θ-2θ geometry and X-ray absorption spectroscopy (XAS). The magnetic characterisation was made using conversion electron Moessbauer spectroscopy (CEMS). The XRD result for the as-deposited multilayer shows a high-degree crystallinity, while CEMS suggests abrupt interface, since no significant contribution from vanadium in iron is observed. After the IBM and thermal treatment, the results from XRD show an FeV solid solution indexed as a bcc-disordered structure (α phase). XAS structural results are consistent with the XRD observations. CEMS results show a magnetic moment reduction for mixed samples

  15. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

    Science.gov (United States)

    Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

    2018-04-01

    The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

  16. Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

    Science.gov (United States)

    Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

    2016-11-01

    Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

  17. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    International Nuclear Information System (INIS)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-01-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 deg. C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 deg. C increments from 100 to 300 deg. C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60 Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 deg. C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 deg. C/30 min and that similarities between fossil and MEQ spectra after the 300 deg. C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history

  18. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

    2010-01-01

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  19. Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

    Science.gov (United States)

    Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

    2018-03-01

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  20. Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

    2018-03-02

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  1. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  2. Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells

    International Nuclear Information System (INIS)

    Sasaki, T.; Arafune, K.; Lee, H.S.; Ekins-Daukes, N.J.; Tanaka, S.; Ohshita, Y.; Yamaguchi, M.

    2006-01-01

    Lattice-mismatched In 0.16 Ga 0.84 As solar cells were grown on GaAs substrates using graded In x Ga 1- x As buffer layers and homogenous In 0.16 Ga 0.84 As buffer layers. The indium composition x in the graded buffer changed from 0% to 16% continuously. Thermal cycle annealing (TCA) was performed after the growth of the graded buffer layers. The effects of TCA on the solar cell open-circuit voltage and quantum efficiency have been investigated. The minority carrier lifetime is observed to increase in the p-type In 0.16 Ga 0.84 As layer after applying the TCA process. Electron-beam-induced current microscopy also shows a related reduction in dislocation density in the p-type In 0.16 Ga 0.84 As layer after TCA processing. Cross-sectional transmission electron microscopy performed on the graded buffer layer suggests that the strain present in the cell layers is reduced after the TCA process, implying that the TCA treatment promotes strain relaxation in the graded buffer layers

  3. Studies of thermal annealing and dope composition on the enhancement of separation performance cellulose acetate membrane for brackish water treatment from Jepara

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2014-08-01

    Full Text Available Membrane is an alternative technology of water treatment with filtration principle that is being widely developed and used for water treatment. The main objective of this study was to make an asymmetric membrane using cellulose acetate polymer and study the effect of additive and annealing treatment on the morphology structure and performance of cellulose acetate membranes in brackish water treatment. Asymmetric membranes for brackish water treatment were casted using a casting machine process from dope solutions containing cellulose acetates and acetone as a solvent. Membranes was prepared by phase inversion method  with variation of polyethylene glycol (PEG concentration of 1 and 5 wt% and with thermal annealing at 60 oC in 10 seconds and without thermal annealing behavior. Membrane characterization consists of calculation of membrane flux and rejection with brackish water as a feed from Jepara. The research concluded that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion method. The more added concentration of PEG will be resulted the larger pore of membrane. Meanwhile the higher temperature and the longer time of annealing treatment, the skin layer of membrane become denser. Membrane with the composition of 18 wt% cellulose acetate, 5 wt% PEG, 1 wt% distilled water, with heat treatment at temperature of 60 oC for 10 seconds is obtained optimal performance.

  4. Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

    2013-12-01

    The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

  5. Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices.

    Science.gov (United States)

    Cheng, Zengguang; Zhou, Qiaoyu; Wang, Chenxuan; Li, Qiang; Wang, Chen; Fang, Ying

    2011-02-09

    By combining atomic force microscopy and trans-port measurements, we systematically investigated effects of thermal annealing on surface morphologies and electrical properties of single-layer graphene devices fabricated by electron beam lithography on silicon oxide (SiO(2)) substrates. Thermal treatment above 300 °C in vacuum was required to effectively remove resist residues on graphene surfaces. However, annealing at high temperature was found to concomitantly bring graphene in close contact with SiO(2) substrates and induce increased coupling between them, which leads to heavy hole doping and severe degradation of mobilities in graphene devices. To address this problem, a wet-chemical approach employing chloroform was developed in our study, which was shown to enable both intrinsic surfaces and enhanced electrical properties of graphene devices. Upon the recovery of intrinsic surfaces of graphene, the adsorption and assisted fibrillation of amyloid β-peptide (Aβ1-42) on graphene were electrically measured in real time.

  6. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

    International Nuclear Information System (INIS)

    Liu Fang; Qin Zhixin

    2016-01-01

    Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

  7. SERS activity of Ag decorated nanodiamond and nano-β-SiC, diamond-like-carbon and thermally annealed diamond thin film surfaces.

    Science.gov (United States)

    Kuntumalla, Mohan Kumar; Srikanth, Vadali Venkata Satya Siva; Ravulapalli, Satyavathi; Gangadharini, Upender; Ojha, Harish; Desai, Narayana Rao; Bansal, Chandrahas

    2015-09-07

    In the recent past surface enhanced Raman scattering (SERS) based bio-sensing has gained prominence owing to the simplicity and efficiency of the SERS technique. Dedicated and continuous research efforts have been made to develop SERS substrates that are not only stable, durable and reproducible but also facilitate real-time bio-sensing. In this context diamond, β-SiC and diamond-like-carbon (DLC) and other related thin films have been promoted as excellent candidates for bio-technological applications including real time bio-sensing. In this work, SERS activities of nanodiamond, nano-β-SiC, DLC, thermally annealed diamond thin film surfaces were examined. DLC and thermally annealed diamond thin films were found to show SERS activity without any metal nanostructures on their surfaces. The observed SERS activities of the considered surfaces are explained in terms of the electromagnetic enhancement mechanism and charge transfer resonance process.

  8. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    International Nuclear Information System (INIS)

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  9. Influence of thermal annealing-induced molecular aggregation on film properties and photovoltaic performance of bulk heterojunction solar cells based on a squaraine dye

    Science.gov (United States)

    Zhang, Pengpeng; Ling, Zhitian; Chen, Guo; Wei, Bin

    2018-04-01

    Squaraine (SQ) dyes have been considered as efficient photoactive materials for organic solar cells. In this work, we purposely controlled the molecular aggregation of an SQ dye, 2,4-bis[4-(N,N-dibutylamino)-2-dihydroxyphenyl] SQ (DBSQ-(OH)2) in the DBSQ(OH)2:[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) blend film by using the thermal annealing method, to study the influence of the molecular aggregation on film properties as well as the photovoltaic performance of DBSQ(OH)2:PCBM-based bulk heterojunction (BHJ) solar cells. Our results demonstrate that thermal annealing may change the aggregation behavior of DBSQ(OH)2 in the DBSQ(OH)2:PCBM film, and thus significantly influence the surface morphology, optical and electrical properties of the blend film, as well as the photovoltaic performance of DBSQ(OH)2:PCBM BHJ cells.

  10. Rapid microfluidic thermal cycler for nucleic acid amplification

    Science.gov (United States)

    Beer, Neil Reginald; Vafai, Kambiz

    2015-10-27

    A system for thermal cycling a material to be thermal cycled including a microfluidic heat exchanger; a porous medium in the microfluidic heat exchanger; a microfluidic thermal cycling chamber containing the material to be thermal cycled, the microfluidic thermal cycling chamber operatively connected to the microfluidic heat exchanger; a working fluid at first temperature; a first system for transmitting the working fluid at first temperature to the microfluidic heat exchanger; a working fluid at a second temperature, a second system for transmitting the working fluid at second temperature to the microfluidic heat exchanger; a pump for flowing the working fluid at the first temperature from the first system to the microfluidic heat exchanger and through the porous medium; and flowing the working fluid at the second temperature from the second system to the heat exchanger and through the porous medium.

  11. Thermal annealing behaviour of sulphur-35 produced in pile-irradiated mixed crystals AlCl/sub 3/-FeCl/sub 3/

    Energy Technology Data Exchange (ETDEWEB)

    Dyakovich, V; Todorovski, D S; Kostadinova, Z D [Sofia Univ. (Bulgaria). Khimicheski Fakultet

    1983-12-19

    The regression analysis of the experimental results on the thermal annealing behaviour of /sup 35/S produced in pile-irradiated mixed crystals AlCl/sub 3/-FeCl/sub 3/ confirms some suppositions made in a previous paper. The chemical state of /sup 35/S is defined by the target prehistory and the iron concentration. The influence of Fe/sup 3 +/ can be observed indirectly through its influence on the defect structure formed.

  12. Study of photoluminescence from annealed bulk-ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

    2006-03-15

    We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Defect induced ferromagnetism in MgO and its exceptional enhancement upon thermal annealing: a case of transformation of various defect states.

    Science.gov (United States)

    Pathak, Nimai; Gupta, Santosh Kumar; Prajapat, C L; Sharma, S K; Ghosh, P S; Kanrar, Buddhadev; Pujari, P K; Kadam, R M

    2017-05-17

    MgO particles of few micron size are synthesized through a sol-gel method at different annealing temperatures such as 600 °C (MgO-600), 800 °C (MgO-800) and 1000 °C (MgO-1000). EDX and ICP-AES studies confirmed a near total purity of the sample with respect to paramagnetic metal ion impurities. Magnetic measurements showed a low temperature weak ferromagnetic ordering with a T C (Curie temperature) around 65 K (±5 K). Unexpectedly, the saturation magnetization (M s ) was found to be increased with increasing annealing temperature during synthesis. It was observed that with J = 1 or 3/2 or S = 1 or 3/2, the experimental points are fitted well with the Brillouin function of weak ferromagnetic ordering. A positron annihilation lifetime measurement study indicated the presence of a divacancy (2V Mg + 2V O ) cluster in the case of the low temperature annealed compound, which underwent dissociations into isolated monovacancies of Mg and O at higher annealing temperatures. An EPR study showed that both singly charged Mg vacancies and oxygen vacancies are responsible for ferromagnetic ordering. It also showed that at lower annealing temperatures the contribution from was very low while at higher annealing temperatures, it increased significantly. A PL study showed that most of the F + centers were present in their dimer form, i.e. as centers. DFT calculation implied that this dimer form has a higher magnetic moment than the monomer. After a careful consideration of all these observations, which have been reported for the first time, this thermally tunable unusual magnetism phenomenon was attributed to a transformation mechanism of one kind of cluster vacancy to another.

  14. The effect of pre-heating and pre-irradiation with gamma rays on thermal annealing in bis [n-benzoil-n-phenyl hydroxilaminate] copper (II)

    International Nuclear Information System (INIS)

    Nakanishi, C.; Silva, C.P.G. da.

    1988-10-01

    The main purpose of this work was to make a contribution to the study of the chemical effects of the (n,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gamma-rays on the retention and thermal annealing of bis-[N-benzoil-N-phenlhydroxilaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-Point, elemental analysis, infra-red and vesible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis and radiolysis on the retention. It seems that heat gamma-radiation can produce deffects which will lower the susceptibility of the compound to thermal annealing. On the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing aasuming the capture of free electrons and also the existence of holes. (author) [pt

  15. The effect of pre-heating and pre-irradiation with gamma-rays on thermal annealing in-bis-[n-benzoil-n-(o) tolylhydroxylaminate] cooper (II)

    International Nuclear Information System (INIS)

    Nakanishi, C.; Silva, C.P.G. da.

    1990-02-01

    The main purpose of this work was to make a contribution on the study of the chemical effects of the (N,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gama-rays on the retention and thermal annealing of bis [N-benzoyl-N-(o)tolylhydroxylaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-point, elemental analysis, infra-red and visible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis on the retention. It seems that heat and gamma-radiaition can produce deffects which will lower the susceptibility of the compound to thermal annealling. On the basis on the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing assuming the capture of free electrons and also the existence of holes. (author) [pt

  16. Mechanism for wettability alteration of ZnO nanorod arrays via thermal annealing in vacuum and air

    International Nuclear Information System (INIS)

    Zhang Jun; Liu Yanru; Wei Zhiyang; Zhang Junyan

    2013-01-01

    Highlights: ► Oxygen vacancy is the key factor in accounting for the change in morphology of the ZnO nanorod arrays. ► We firstly investigated the wettability alteration of ZnO nanorod arrays annealed in vacuum at different temperature. ► The hydrophilicity of the ZnO nanorod arrays annealed in air is not related to the oxygen vacancy but ascribed to the O adatom on the nanorod surface. - Abstract: The ZnO nanorod arrays were synthesized via a simple hydrothermal process followed by annealing in vacuum and air respectively at different temperature. The wettability of samples was controlled by adjusting the annealing atmosphere and temperature. To investigate the mechanism of wettability alteration, the chemical composition and surface morphology of nanorod arrays were analyzed by X-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscopy (FE-SEM), respectively. Increasing oxygen vacancy concentration by increasing annealing temperature in vacuum resulted in a great change of surface morphology, which played the major role in wettability change. Under annealing in air, oxygen vacancy concentration reduced and the surface morphology of nanorod arrays showed little change with increasing annealing temperature. The wettability alteration is ascribed to the O adatom on the nanorods surface.

  17. Rapid thermal synthesis of GaN nanocrystals and nanodisks

    Czech Academy of Sciences Publication Activity Database

    Sofer, Z.; Sedmidubský, D.; Huber, Š.; Šimek, P.; Šaněk, F.; Jankovský, O.; Gregorová, E.; Fiala, R.; Matějková, Stanislava; Mikulics, M.

    2013-01-01

    Roč. 15, č. 1 (2013), 1411/1-1411/7 ISSN 1388-0764 Institutional support: RVO:61388963 Keywords : gallium nitride * thermal ammonolysis * nanodisks * nanocrystals Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.278, year: 2013

  18. Thermal annealing dynamics of carbon-coated LiFePO{sub 4} nanoparticles studied by in-situ analysis

    Energy Technology Data Exchange (ETDEWEB)

    Krumeich, Frank, E-mail: krumeich@inorg.chem.ethz.ch [Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir-Prelog-Weg 1, 8093 Zurich (Switzerland); Waser, Oliver; Pratsinis, Sotiris E. [Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, 8092 Zurich (Switzerland)

    2016-10-15

    The thermal behavior of core-shell carbon-coated lithium iron phosphate (LiFePO{sub 4}-C) nanoparticles made by flame spray pyrolysis (FSP) during annealing was investigated by in-situ transmission electron microscopy (TEM), in-situ X-ray powder diffraction (XRD) as well as ex-situ diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS). Crystallization of the initially glassy LiFePO{sub 4}-C nanoparticles starts at quite low temperatures (T=400 °C), forming single crystals inside the confinement of the carbon shell. Upon increasing the temperature to T≥700 °C, LiFePO{sub 4} starts to diffuse through the carbon shell resulting in cavities inside the mostly intact carbon shell. By increasing the temperature further to T≥800 °C, the initial core-shell morphology converts into open carbon shells (flakes and cenospheres) and bulky LiFePO{sub 4} particles (diameter in the range 300–400 nm), in agreement with ex-situ experiments. - Graphical abstract: TEM images of a typical sample area recorded at room temperature and after heating in-situ heating reveal the growth of particles and the formation of empty carbon cages. - Highlights: • LiFePO{sub 4} coated by a carbon shell is produced by flame spray pyrolysis. • The amorphous LiFePO{sub 4} starts to crystallize at 400 °C as revealed by in-situ XRD. • Crystal growth was visualized by TEM heating experiments. • The formation of empty carbon cages starts at 700 °C.

  19. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    International Nuclear Information System (INIS)

    Malek, M.F.; Mamat, M.H.; Musa, M.Z.; Soga, T.; Rahman, S.A.; Alrokayan, Salman A.H.; Khan, Haseeb A.; Rusop, M.

    2015-01-01

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T a ) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T a was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T a . All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T a temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T a temperature

  20. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Pulau Pinang, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang (Malaysia); Soga, T. [Department of Frontier Materials, Nagoya Institute of Technology (NITech), Nagoya 466-8555 (Japan); Rahman, S.A. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A.H.; Khan, Haseeb A. [Department of Biochemistry, College of Science, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2015-04-15

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T{sub a}) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T{sub a} was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T{sub a}. All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T{sub a} temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T{sub a} temperature.

  1. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  2. Rapid fabrication of an ordered nano-dot array by the combination of nano-plastic forming and annealing methods

    International Nuclear Information System (INIS)

    Yoshino, Masahiko; Ohsawa, Hiroki; Yamanaka, Akinori

    2011-01-01

    In this paper, a new fabrication method for an ordered nano-dot array is developed. Combination of coating, nano-plastic forming and annealing processes is studied to produce uniformly sized and ordered gold nano-dot array on a quartz glass substrate. The experimental results reveal that patterning of a groove grid on the gold-coated substrate with NPF is effective to obtain the ordered gold nano-dot array. In the proposed fabrication process, the size of the gold nano-dot can be controlled by adjusting the groove grid size. A minimum gold nano-dot array fabricated on a quartz-glass substrate was 93 nm in diameter and 100 nm in pitch. Furthermore, the mechanism of nano-dot array generation by the presented process is investigated. Using a theoretical model it is revealed that the proposed method is capable of fabrication of smaller nano-dots than 10 nm by controlling process conditions adequately.

  3. Microstructural evolution of Au/TiO{sub 2} nanocomposite films: The influence of Au concentration and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Kubart, T.; Kumar, S.; Leifer, K. [Solid-State Electronics, Department of Engineering Sciences, Uppsala University, P.O. Box 534, Uppsala SE-751 21 (Sweden); Rodrigues, M.S. [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Duarte, N.; Martins, B.; Dias, J.P. [Instituto Pedro Nunes, Laboratório de Ensaios, Desgaste e Materiais, Rua Pedro Nunes, 3030-199 Coimbra (Portugal); Cavaleiro, A. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Vaz, F. [SEG-CEMUC, Mechanical Engineering Department, University of Coimbra, 3030-788 Coimbra (Portugal); Centro/Departamento de Física, Universidade do Minho, Campus de Gualtar, 4710-057 Braga (Portugal)

    2015-04-01

    Nanocomposite thin films consisting of a dielectric matrix, such as titanium oxide (TiO{sub 2}), with embedded gold (Au) nanoparticles were prepared and will be analysed and discussed in detail in the present work. The evolution of morphological and structural features was studied for a wide range of Au concentrations and for annealing treatments in air, for temperatures ranging from 200 to 800 °C. Major findings revealed that for low Au atomic concentrations (at.%), there are only traces of clustering, and just for relatively high annealing temperatures, T ≥ 500 °C. Furthermore, the number of Au nanoparticles is extremely low, even for the highest annealing temperature, T = 800 °C. It is noteworthy that the TiO{sub 2} matrix also crystallizes in the anatase phase for annealing temperatures above 300 °C. For intermediate Au contents (5 at.% ≤ C{sub Au} ≤ 15 at.%), the formation of gold nanoclusters was much more evident, beginning at lower annealing temperatures (T ≥ 200 °C) with sizes ranging from 2 to 25 nm as the temperature increased. A change in the matrix crystallization from anatase to rutile was also observed in this intermediate range of compositions. For the highest Au concentrations (> 20 at.%), the films tended to form relatively larger clusters, with sizes above 20 nm (for T ≥ 400 °C). It is demonstrated that the structural and morphological characteristics of the films are strongly affected by the annealing temperature, as well as by the particular amounts, size and distribution of the Au nanoparticles dispersed in the TiO{sub 2} matrix. - Highlights: • Au:TiO{sub 2} films were produced by magnetron sputtering and post-deposition annealing. • The Au concentration in the films increases with the Au pellet area. • Annealing induced microstructural changes in the films. • The nanoparticle size evolution with temperature depends on the Au concentration.

  4. Lumped-parameter fuel rod model for rapid thermal transients

    International Nuclear Information System (INIS)

    Perkins, K.R.; Ramshaw, J.D.

    1975-07-01

    The thermal behavior of fuel rods during simulated accident conditions is extremely sensitive to the heat transfer coefficient which is, in turn, very sensitive to the cladding surface temperature and the fluid conditions. The development of a semianalytical, lumped-parameter fuel rod model which is intended to provide accurate calculations, in a minimum amount of computer time, of the thermal response of fuel rods during a simulated loss-of-coolant accident is described. The results show good agreement with calculations from a comprehensive fuel-rod code (FRAP-T) currently in use at Aerojet Nuclear Company

  5. Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

    Science.gov (United States)

    Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-07-01

    The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

  6. Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Yuxiao Guo

    2018-02-01

    Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

  7. Thermal Inactivation of Bacillus anthracis Spores Using Rapid Resistive Heating

    Science.gov (United States)

    2016-03-24

    agents. There is motivation for using thermal decontamination of B.a. spores for agent defeat scenarios. Spore-forming microorganisms are much...the top soil on Gruinard Island for over 40 years after the British detonated experimental anthrax bombs on the island during World War II (U.S

  8. Rapid Thermal Chemical Vapor Deposition for Dual-Gated Sub-100 nm MOSFET's

    National Research Council Canada - National Science Library

    Sturm, James

    2001-01-01

    ... (such as microprocessors and memory chips) is based. This project examines the scaling of MOSFET's to very small channel dimensions using a vertical structure which is defined by Rapid Thermal Chemical Vapor Deposition...

  9. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    Science.gov (United States)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-06-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 °C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 °C increments from 100 to 300 °C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 °C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 °C/30 min and that similarities between fossil and MEQ spectra after the 300 °C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history.

  10. Nanofabrication and characterization of ZnO nanorod arrays and branched microrods by aqueous solution route and rapid thermal processing

    International Nuclear Information System (INIS)

    Lupan, Oleg; Chow, Lee; Chai, Guangyu; Roldan, Beatriz; Naitabdi, Ahmed; Schulte, Alfons; Heinrich, Helge

    2007-01-01

    This paper presents an inexpensive and fast fabrication method for one-dimensional (1D) ZnO nanorod arrays and branched two-dimensional (2D), three-dimensional (3D) - nanoarchitectures. Our synthesis technique includes the use of an aqueous solution route and post-growth rapid thermal annealing. It permits rapid and controlled growth of ZnO nanorod arrays of 1D - rods, 2D - crosses, and 3D - tetrapods without the use of templates or seeds. The obtained ZnO nanorods are uniformly distributed on the surface of Si substrates and individual or branched nano/microrods can be easily transferred to other substrates. Process parameters such as concentration, temperature and time, type of substrate and the reactor design are critical for the formation of nanorod arrays with thin diameter and transferable nanoarchitectures. X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and Micro-Raman spectroscopy have been used to characterize the samples

  11. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  12. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hao; Harasawa, Ryo; Yasue, Yuya; Aritake, Takanori; Jiang, Canyu; Tackeuchi, Atsushi, E-mail: atacke@waseda.jp [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Ji, Lian; Lu, Shulong [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou (China)

    2016-08-15

    The effect of thermal annealing on the electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  14. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

    Directory of Open Access Journals (Sweden)

    Hao Wu

    2016-08-01

    Full Text Available The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4 ns at 10 (300 K, which was more than two (four times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  15. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  16. Relative measurement of the fluxes of thermal, resonant and rapid neutrons in reactor G1

    International Nuclear Information System (INIS)

    Carle, R.; Mazancourt, T. de

    1957-01-01

    We sought to determine the behavior of the thermal, resonant and rapid neutron fluxes in the multiplier-reflector transition region, in the two principal directions of the system. We have also measured the variation of these different fluxes in the body of the multiplier medium in a canal filled with graphite and in an empty canal. The results are given in the form of curves representing: - the variation of the ratio of the thermal flux to the rapid flux in axial and radial transitions - the behavior of the thermal and resonant fluxes and the variation of their ratio in the same regions. (author) [fr

  17. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  18. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    International Nuclear Information System (INIS)

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-01-01

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

  19. Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

    DEFF Research Database (Denmark)

    Huet, K.; Lin, Rong; Boniface, C

    2009-01-01

    In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap...... parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap...

  20. The effect of residual thermal stresses on the fatigue crack growth of laser-surface-annealed AISI 304 stainless steel Part I: computer simulation

    International Nuclear Information System (INIS)

    Shiue, R.K.; Chang, C.T.; Young, M.C.; Tsay, L.W.

    2004-01-01

    The effect of residual thermal stresses on the fatigue crack growth of the laser-surface-annealed AISI 304 stainless steel, especially the effect of stress redistribution ahead of the crack tip was extensively evaluated in the study. Based on the finite element simulation, the longitudinal residual tensile stress field has a width of roughly 20 mm on the laser-irradiated surface and was symmetric with respect to the centerline of the laser-annealed zone (LAZ). Meanwhile, residual compressive stresses distributed over a wide region away from the LAZ. After introducing a notch perpendicular to the LAZ, the distribution of longitudinal residual stresses became unsymmetrical about the centerline of LAZ. High residual compressive stresses exist within a narrow range ahead of notch tip. The improved crack growth resistance of the laser-annealed specimen might be attributed to those induced compressive stresses. As the notch tip passed through the centerline of the LAZ, the residual stress ahead of the notch tip was completely reverted into residual tensile stresses. The existence of unanimous residual tensile stresses ahead of the notch tip was maintained, even if the notch tip extended deeply into the LAZ. Additionally, the presence of the residual tensile stress ahead of the notch tip did not accelerate the fatigue crack growth rate in the compact tension specimen

  1. X-ray diffraction and high resolution transmission electron microscopy characterization of intermetallics formed in Fe/Ti nanometer-scale multilayers during thermal annealing

    International Nuclear Information System (INIS)

    Wu, Z.L.; Peng, T.X.; Cao, B.S.; Lei, M.K.

    2009-01-01

    Intermetallics formation in the Fe/Ti nanometer-scale multilayers magnetron-sputtering deposited on Si(100) substrate during thermal annealing at 623-873 K was investigated by using small and wide angle X-ray diffraction and cross-sectional high-resolution transmission electron microscopy. The Fe/Ti nanometer-scale multilayers were constructed with bilayer thickness of 16.2 nm and the sublayer thickness ratio of 1:1. At the annealing temperature of 623 K, intermetallics FeTi were formed by nucleation at the triple joins of α-Fe(Ti)/α-Ti interface and α-Ti grain boundary with an orientational correlation of FeTi(110)//α-Ti(100) and FeTi[001]//α-Ti[001] to adjacent α-Ti grains. The lateral growth of intermetallics FeTi which is dependent on the diffusion path of Ti led to a coalescence into an intermetallic layer. With an increase in the annealing temperature, intermetallics Fe 2 Ti were formed between the intermetallics FeTi and the excess Fe due to the limitation of Fe and Ti atomic concentrations, resulting in the coexistence of intermetallics FeTi and Fe 2 Ti. It was found that the low energy interface as well as the dominant diffusion path constrained the nucleation and growth of intermetallics during interfacial reaction in the nanometer-scale metallic multilayers.

  2. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  3. Evolution of the magnetic properties of Co10Cu90 nanoparticles prepared by wet chemistry with thermal annealing.

    Science.gov (United States)

    García, I; Echeberria, J; Kakazei, G N; Golub, V O; Saliuk, O Y; Ilyn, M; Guslienko, K Y; González, J M

    2012-09-01

    Nanoparticles of Co10Cu90 alloy have been prepared by sonochemical wet method. According to transmission electron microscopy, bimetallic particles with typical diameter of 50-100 nm consisting of nanocrystallites with average diameter of 15-20 nm were obtained. The samples were annealed at 300 degrees C and 450 degrees C. Zero field cooled and field cooled temperature dependences of magnetization in the temperature range of 5-400 K at 50 Oe, as well as magnetization hysteresis loops at 15, 100 and 305 K were measured by vibrating sample magnetometry. Presence of antiferromagnetic phase, most probably of the oxide Co3O4, was observed in as-prepared sample. The lowest coercivity was found for the CoCu sample annealed at-300 degrees C, whereas for as prepared sample and the one annealed at 450 degrees C it was significantly higher. The samples were additionally probed by continuous wave ferromagnetic resonance at room, temperature using a standard X-band electron spin resonance spectrometer. A good correspondence between evolution of the coercivity and the microwave resonance fields with annealing temperature was observed.

  4. Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

    NARCIS (Netherlands)

    Scorticati, D.; Illiberi, A.; Bor, Teunis Cornelis; Eijt, S.W.H.; Schut, H.; Römer, Gerardus Richardus, Bernardus, Engelina; Klein Gunnewiek, Michel; Lenferink, Aufrid T.M.; Kniknie, B.; Joy, R.M.; Dorenkamper, M.S.; de Lange, D.F.; Otto, Cornelis; Borsa, D.; Soppe, W.J.; Huis in 't Veld, Bert

    2015-01-01

    Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400–1000 nm range did not change significantly. We studied the

  5. Thermal annealing using ultra-short laser pulses to improve the electrical properties of Al:ZnO thin films

    NARCIS (Netherlands)

    Scorticati, D.; Illiberi, A.; Bor, T.C.; Eijt, S.W.H.; Schut, H.; Römer, G.R.B.E.; Klein Gunnewiek, M.; Lenferink, A.T.M.; Kniknie, B.J.; Mary Joy, R.; Dorenkamper, M.S.; Lange, D.F. de; Otto, C.; Borsa, D.; Soppe, W.J.; Huis in 't Veld, A.J.

    2015-01-01

    Abstract Industrial-grade Al:ZnO thin films, were annealed by UV picosecond laser irradiation in argon atmosphere. A remarkable increase of both the carrier density and electron mobility was measured, while the optical properties in the 400-1000 nm range did not change significantly. We studied the

  6. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing : Solvent and Thickness Effects

    NARCIS (Netherlands)

    Yang, Qiuyan; Loos, Katja

    2017-01-01

    Solvent vapor annealing of block copolymer (BCP) thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for

  7. Rapid and annealing-free self-assembly of DNA building blocks for 3D hydrogel chaperoned by cationic comb-type copolymers.

    Science.gov (United States)

    Zhang, Zheng; Wu, Yuyang; Yu, Feng; Niu, Chaoqun; Du, Zhi; Chen, Yong; Du, Jie

    2017-10-01

    The construction and self-assembly of DNA building blocks are the foundation of bottom-up development of three-dimensional DNA nanostructures or hydrogels. However, most self-assembly from DNA components is impeded by the mishybridized intermediates or the thermodynamic instability. To enable rapid production of complicated DNA objects with high yields no need for annealing process, herein different DNA building blocks (Y-shaped, L- and L'-shaped units) were assembled in presence of a cationic comb-type copolymer, poly (L-lysine)-graft-dextran (PLL-g-Dex), under physiological conditions. The results demonstrated that PLL-g-Dex not only significantly promoted the self-assembly of DNA blocks with high efficiency, but also stabilized the assembled multi-level structures especially for promoting the complicated 3D DNA hydrogel formation. This study develops a novel strategy for rapid and high-yield production of DNA hydrogel even derived from instable building blocks at relatively low DNA concentrations, which would endow DNA nanotechnology for more practical applications.

  8. The influence of annealing on manganese implanted GaAs films

    International Nuclear Information System (INIS)

    Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

  9. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  10. Rapidity dependence of thermal dileptons resulting from hadronizing quark-gluon matter with finite baryon charge

    International Nuclear Information System (INIS)

    Kaempfer, B.; Technische Univ. Dresden; Pavlenko, O.P.; AN Ukrainskoj SSR, Kiev; Gorenstein, M.I.; Peshier, A.; Soff, G.

    1994-07-01

    The influence of a non-vanishing baryon charge on the rapidity distribution of dileptons produced in ultrarelativistic heavy-ion collisions is studied. We employ a frozen motion model with scaling invariant expansion of the hadronizing quark-gluon plasma as well as a realistic rapidity distribution of secondary particles (i.e., pions and baryons) expected for RHIC energies. We find a considerable suppression of the dilepton production yield at large rapidities due to the finite baryon density. To discriminate the thermal dileptons from Drell-Yan background we propose to utilize the dilepton yield scaled suitably by the pion multiplicity as function of rapidity. (orig.)

  11. Correlation of Etch Pits and Dislocations in As-grown and Thermal Cycle-Annealed HgCdTe(211) Films

    Science.gov (United States)

    Vaghayenegar, M.; Jacobs, R. N.; Benson, J. D.; Stoltz, A. J.; Almeida, L. A.; Smith, David J.

    2017-08-01

    This paper reports observations of the different types of etch pits and dislocations present in thick HgCdTe (211) layers grown by molecular beam epitaxy on CdTe/Si (211) composite substrates. Dislocation analysis for as-grown and thermal cycle-annealed samples has been carried out using bright-field transmission electron microscopy. Triangular pits present in as-grown material are associated with a mixture of Frank partials and perfect dislocations, while pits with fish-eye shapes have perfect dislocations with 1/2[0\\bar{1}1] Burgers vector. The dislocations beneath skew pits are more complex as they have two different crystallographic directions, and are associated with a mixture of Shockley partials and perfect dislocations. Dislocation analysis of samples after thermal cycle annealing (TCA) shows that the majority of dislocations under the etch pits are short segments of perfect dislocations with 1/2[0\\bar{1}1] Burgers vector while the remainder are Shockley partials. The absence of fish-eye shape pits in TCA samples suggests that they are associated with mobile dislocations that have reacted during annealing, causing the overall etch pit density to be reduced. Very large pits with a density ˜2×103 cm-2 are observed in as-grown and TCA samples. These defects thread from within the CdTe buffer layer into the upper regions of the HgCdTe layers. Their depth in as-grown material is so large that it is not possible to locate and identify the underlying defects.

  12. A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2

    International Nuclear Information System (INIS)

    Calixto-Rodriguez, M.; Martinez, H.; Pena, Y.; Flores, O.; Esparza-Ponce, H.E.; Sanchez-Juarez, A.; Campos-Alvarez, J.; Reyes, P.

    2010-01-01

    As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb 2 S 3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E g ) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb 2 S 3 thin films decreased from 10 8 to 10 6 Ω-cm after plasma treatments.

  13. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Science.gov (United States)

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  14. Toward understanding dynamic annealing processes in irradiated ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

    2013-05-01

    High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

  15. Thermal annealing of high dose radiation induced damage at room temperature in alkali halides. Stored energy, thermoluminiscence and colouration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminiscence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminiscence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KCl samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose. Capacity of alkali halides to sotore energy by irradiation increases as the cation size decreases. It appears that most of the observed release is not related to annealing processes of the radiation induced anion Frenkel pairs. The existence of damage in the cation sublattice with which this energy release might be related is considered. (auth.)

  16. Thermal blurring effects on fluctuations of conserved charges in rapidity space

    Energy Technology Data Exchange (ETDEWEB)

    Asakawa, M.; Kitazawa, M.; Onishi, Y.; Sakaida, M.

    2016-12-15

    We argue that the diffusion in the hadron phase and the thermal blurring at thermal freezeout affect observed conserved charge fluctuations considerably in relativistic heavy ion collisions, and show that their effects are of similar order at RHIC and LHC, and thus equally important in understanding experimental data. We also argue that, in order to disentangle them and obtain the initial state charge fluctuations, which we are interested in, it is crucial to measure their dependence on the rapidity window size. In the energy range of the beam energy scan program at RHIC, the diffusion effect would be less important because of the shorter duration of the hadron phase, but the importance of thermal blurring is not reduced. In addition, it is necessary to take account of the complex correspondence between the space-time rapidity and rapidity of observed particles, there.

  17. Formation of thermal fatigue cracks in periodic rapid quenching of metal

    Energy Technology Data Exchange (ETDEWEB)

    Ots, A. [Tallinn Technical University, Thermal Engineering Department, Tallinn (Estonia)

    1998-12-31

    Water lancing is an effective technique for cleaning boiler heating surfaces from ash deposits by burning low-grade fuels with complicated composition of mineral matter. In water cleaning cycles of boiler`s heat transfer surfaces due to rapid quenching destruction of corrosion protective oxide film and formation of thermal fatigue cracks on the outer surface of the tube`s metal occur. The criterion of the thermal fatigue cracks` formation and their growth intensity depend on the character of temperature field in the tube`s metal outer layer. The solution of non-stationary heat conductivity equation for metal rapid quenching conditions is given. The convective heat transfer coefficients from hot metal surface to water jet were established experimentally. Thermal fatigue crack growth intensity was investigated in real boilers` heat transfer surfaces` tubes as well as in laboratory conditions. The formula for predicting thermal fatigue cracks` depth depending on the number of cleaning cycles. (orig.) 5 refs.

  18. Formation of thermal fatigue cracks in periodic rapid quenching of metal

    Energy Technology Data Exchange (ETDEWEB)

    Ots, A [Tallinn Technical University, Thermal Engineering Department, Tallinn (Estonia)

    1999-12-31

    Water lancing is an effective technique for cleaning boiler heating surfaces from ash deposits by burning low-grade fuels with complicated composition of mineral matter. In water cleaning cycles of boiler`s heat transfer surfaces due to rapid quenching destruction of corrosion protective oxide film and formation of thermal fatigue cracks on the outer surface of the tube`s metal occur. The criterion of the thermal fatigue cracks` formation and their growth intensity depend on the character of temperature field in the tube`s metal outer layer. The solution of non-stationary heat conductivity equation for metal rapid quenching conditions is given. The convective heat transfer coefficients from hot metal surface to water jet were established experimentally. Thermal fatigue crack growth intensity was investigated in real boilers` heat transfer surfaces` tubes as well as in laboratory conditions. The formula for predicting thermal fatigue cracks` depth depending on the number of cleaning cycles. (orig.) 5 refs.

  19. Effect of electric-spark alloying and subsequent annealing on the thermal stability of metallic structural materials

    International Nuclear Information System (INIS)

    Vdovin, S.F.; Reshetnikov, S.M.

    2000-01-01

    The effect of annealing on resistive properties of electric-spark coatings on the carbon steels is studied. The steels 10 and 20 samples with electric spark coatings of various compositions and control ones without annealing and coating are chosen for the study. The steels cr27 and 12cr18ni10ti, the nichrome (cr20ni80) alloy, aluminium as well as compositions of these materials: aluminium + cr27 and aluminium + nichrome were used as coating materials. It is shown that aluminium coatings increase the steel 10 heat resistance more them by 4 times, the aluminium + nichrome coatings - more than by 6 times and aluminium + cr27 coatings - more than by 6 times. In contrast to the electric-spark coating of the carbon steel surface by chromium-nickel alloys, the composition aluminium-containing coatings with annealing in vacuum provide for reliability of long-term protection of these steels from air oxidation with the temperature above the aluminium melting [ru

  20. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    OpenAIRE

    Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

    2012-01-01

    It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

  1. Transformation of photoluminescence and Raman scattering spectra of Si-rich Al{sub 2}O{sub 3} films at thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Vergara Hernandez, E. [UPIITA-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Jedrzejewski, J.; Balberg, I. [Racah Institute of Physics, Hebrew University, 91904 Jerusalem (Israel)

    2014-11-15

    The effect of thermal annealing on optical properties of Al{sub 2}O{sub 3} films with the different Si contents was investigated using the photoluminescence and Raman scattering methods. Si-rich Al{sub 2}O{sub 3} films were prepared by RF magnetron co-sputtering of Si and Al{sub 2}O{sub 3} targets on long quartz glass substrates. Photoluminescence (PL) spectra of as grown Si-rich Al{sub 2}O{sub 3} films are characterized by four PL bands with the peak positions at 2.90, 2.70, 2.30 and 1.45 eV. The small intensity Raman peaks related to the scattering in the amorphous Si phase has been detected in as grown films as well. Thermal annealing at 1150 °C for 90 min stimulates the formation of Si nanocrystals (NCs) in the film area with the Si content exceeded 50%. The Raman peak related to the scattering on optic phonons in Si NCs has been detected for this area. After thermal annealing the PL intensity of all mentioned PL bands decreases in the film area with smaller Si content (≤50%) and increases in the film area with higher Si content (≥50%). Simultaneously the new PL band with the peak position at 1.65 eV appears in the film area with higher Si content (≥50%). The new PL band (1.65 eV) is attributed to the exciton recombination inside of small size Si NCs (2.5–2.7 nm). In bigger size Si NCs (3.5–5.0 nm) the PL band at 1.65 eV has been not detected due to the impact, apparently, of elastic strain appeared at the Si/Al{sub 2}O{sub 3} interface. Temperature dependences of PL spectra for the Si-rich Al{sub 2}O{sub 3} films have been studied in the range of 10–300 K with the aim to reveal the mechanism of recombination transitions for the mentioned above PL bands 2.90, 2.70, 2.30 and 1.45 eV in as grown films. The thermal activation of PL intensity and permanent PL peak positions in the temperature range 10–300 K permit to assign these PL bands to defect related emission in Al{sub 2}O{sub 3} matrix.

  2. A self-adaptive thermal switch array for rapid temperature stabilization under various thermal power inputs

    International Nuclear Information System (INIS)

    Geng, Xiaobao; Patel, Pragnesh; Narain, Amitabh; Meng, Dennis Desheng

    2011-01-01

    A self-adaptive thermal switch array (TSA) based on actuation by low-melting-point alloy droplets is reported to stabilize the temperature of a heat-generating microelectromechanical system (MEMS) device at a predetermined range (i.e. the optimal working temperature of the device) with neither a control circuit nor electrical power consumption. When the temperature is below this range, the TSA stays off and works as a thermal insulator. Therefore, the MEMS device can quickly heat itself up to its optimal working temperature during startup. Once this temperature is reached, TSA is automatically turned on to increase the thermal conductance, working as an effective thermal spreader. As a result, the MEMS device tends to stay at its optimal working temperature without complex thermal management components and the associated parasitic power loss. A prototype TSA was fabricated and characterized to prove the concept. The stabilization temperatures under various power inputs have been studied both experimentally and theoretically. Under the increment of power input from 3.8 to 5.8 W, the temperature of the device increased only by 2.5 °C due to the stabilization effect of TSA

  3. Enhanced antiadhesive properties of chitosan/hyaluronic acid polyelectrolyte multilayers driven by thermal annealing: Low adherence for mammalian cells and selective decrease in adhesion for Gram-positive bacteria.

    Science.gov (United States)

    Muzzio, Nicolás E; Pasquale, Miguel A; Diamanti, Eleftheria; Gregurec, Danijela; Moro, Marta Martinez; Azzaroni, Omar; Moya, Sergio E

    2017-11-01

    The development of antifouling coatings with restricted cell and bacteria adherence is fundamental for many biomedical applications. A strategy for the fabrication of antifouling coatings based on the layer-by-layer assembly and thermal annealing is presented. Polyelectrolyte multilayers (PEMs) assembled from chitosan and hyaluronic acid were thermally annealed in an oven at 37°C for 72h. The effect of annealing on the PEM properties and topography was studied by atomic force microscopy, ζ-potential, circular dichroism and contact angle measurements. Cell adherence on PEMs before and after annealing was evaluated by measuring the cell spreading area and aspect ratio for the A549 epithelial, BHK kidney fibroblast, C2C12 myoblast and MC-3T3-E1 osteoblast cell lines. Chitosan/hyaluronic acid PEMs show a low cell adherence that decreases with the thermal annealing, as observed from the reduction in the average cell spreading area and more rounded cell morphology. The adhesion of S. aureus (Gram-positive) and E. coli (Gram-negative) bacteria strains was quantified by optical microscopy, counting the number of colony-forming units and measuring the light scattering of bacteria suspension after detachment from the PEM surface. A 20% decrease in bacteria adhesion was selectively observed in the S. aureus strain after annealing. The changes in mammalian cell and bacteria adhesion correlate with the changes in topography of the chitosan/hyaluronic PEMs from a rough fibrillar 3D structure to a smoother and planar surface after thermal annealing. Copyright © 2017. Published by Elsevier B.V.

  4. Thermal annealing of high dose radiation induced damage at room temperature in alkaline. Stored energy, thermoluminescence and coloration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminescence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminescence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KC1 samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose.Capacity of alkali halides to store energy by irradiation increases as the cation size decreases. (Author) 51 refs

  5. Effect of thermal annealing on scintillation properties of Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12} under different atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chao; Ding, Dongzhou; Wu, Yuntao; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Wang, Qingqing; Ye, Le; Ren, Guohao [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

    2017-05-15

    Cerium-doped 1% Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12}(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O{sub 2} and N{sub 2} atmospheres from 350 to 1400 C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on ''as-grown'' and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O{sub 2} was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O{sub 2} containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77-650 K were found to be related to oxygen vacancies. (orig.)

  6. Proximity annealing of sulfur-implanted gallium arsenide using a strip heater

    International Nuclear Information System (INIS)

    Banerjee, S.; Baker, J.

    1985-01-01

    A graphite strip heater has been employed for rapid (-- 30 s) thermal annealing (RTA), at temperatures between 850 and 1150 0 C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr. (author)

  7. Rapid screening of pharmaceutical drugs using thermal desorption – SALDI mass spectrometry

    International Nuclear Information System (INIS)

    Grechnikov, A A; Kubasov, A E; Borodkov, A S; Georgieva, V B; Nikiforov, S M; Simanovsky, Ya O; Alimpiev, S S

    2012-01-01

    A novel approach to the rapid screening of pharmaceutical drugs by surface assisted laser desorption-ionization (SALDI) mass spectrometry with the rotating ball interface coupled with temperature programmed thermal desorption has been developed. Analytes were thermally desorbed and deposited onto the surface of amorphous silicon substrate attached to the rotating ball. The ball was rotated and the deposited analytes were analyzed using SALDI. The effectiveness of coupling SALDI mass spectrometry with thermal desorption was evaluated by the direct and rapid analysis of tablets containing lidocaine, diphenhydramine and propranolol without any sample pretreatment. The overall duration of the screening procedure was 30÷40 sec. Real urine samples were studied for drug analysis. It is shown that with simple preparation steps, urine samples can be quantitatively analyzed using the proposed technique with the detection limits in the range of 0.2÷0.5 ng/ml.

  8. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing: Solvent and Thickness Effects

    Directory of Open Access Journals (Sweden)

    Qiuyan Yang

    2017-10-01

    Full Text Available Solvent vapor annealing of block copolymer (BCP thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for nanolithography and hybrid materials preparation. However, precise control of the arising morphologies is essential, but in most cases difficult to achieve. In this work, we investigated the solvent and thickness effects on the morphology of poly(styrene-b-2 vinyl pyridine (PS-b-P2VP thin films with a film thickness range from 0.4 L0 up to 0.8 L0. Ordered perpendicular structures were achieved. One of the main merits of our work is that the phase behavior of the ultra-high molecular weight BCP thin films, which hold a 100-nm sized domain distance, can be easily monitored via current available techniques, such as scanning electron microscope (SEM, atomic force microscope (AFM, and transmission electron microscope (TEM. Systematic monitoring of the self-assembly behavior during solvent vapor annealing can thus provide an experimental guideline for the optimization of processing conditions of related BCP films systems.

  9. Thermal Annealing to Modulate the Shape Memory Behavior of a Biobased and Biocompatible Triblock Copolymer Scaffold in the Human Body Temperature Range.

    Science.gov (United States)

    Merlettini, Andrea; Gigli, Matteo; Ramella, Martina; Gualandi, Chiara; Soccio, Michelina; Boccafoschi, Francesca; Munari, Andrea; Lotti, Nadia; Focarete, Maria Letizia

    2017-08-14

    A biodegradable and biocompatible electrospun scaffold with shape memory behavior in the physiological temperature range is here presented. It was obtained starting from a specifically designed, biobased PLLA-based triblock copolymer, where the central block is poly(propylene azelate-co-propylene sebacate) (P(PAz60PSeb40)) random copolymer. Shape memory properties are determined by the contemporary presence of the low melting crystals of the P(PAz60PSeb40) block, acting as switching segment, and of the high melting crystal phase of PLLA blocks, acting as physical network. It is demonstrated that a straightforward annealing process applied to the crystal phase of the switching element gives the possibility to tune the shape recovery temperature from about 25 to 50 °C, without the need of varying the copolymer's chemical structure. The thermal annealing approach here presented can be thus considered a powerful strategy for "ad hoc" programming the same material for applications requiring different recovery temperatures. Fibroblast culture experiments demonstrated scaffold biocompatibility.

  10. Combined effect of non-equilibrium solidification and thermal annealing on microstructure evolution and hardness behavior of AZ91 magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Z.Z.; Yang, W., E-mail: weiyang@mail.nwpu.edu.cn; Chen, S.H.; Yu, H.; Xu, Z.F.

    2014-06-15

    Non-equilibrium solidification of commercial AZ91 magnesium alloy was performed by copper mold spray-casting technique and the thermal stability property of as-formed meta-stable microstructure was investigated by subsequent annealing at different temperatures and times. Remarkable grain refinement appears with increasing cooling rate during solidification process, which is accompanied by a visible cellular/dendrite transition for the grain morphology of primary phase. Moreover, the non-equilibrium solidified alloy exhibits obvious precipitation hardening effect upon annealing at 200 °C, and the precipitation mode of β-Mg{sub 17}Al{sub 12} phase changes from discontinuous to continuous with extending isothermal time from 4 h to 16 h, which generates an increase of resultant micro-hardness value. After solid solution treatment at the elevated temperature of 420 °C, the volume fraction of β-Mg{sub 17}Al{sub 12} phase decreases and a notable grain growth phenomenon occurs, which give rise to a reduction of hardness in comparison with that of as-quenched alloy.

  11. Enhancement Performance of Hybrid Membrane Zeolite/PES for Produced Water Treatment With Membrane Modification Using Combination of Ulta Violet Irradiation, Composition of Zeolite and Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Djoko Kusworo Tutuk

    2018-01-01

    Full Text Available Produced water is a wastewater from oil production that must be treated well. Membrane is one alternative of water treatments technology based on filtration method. However, in the use of membrane, there’s no exact optimal variable that influences membrane performance.This underlying research to assess factors that influences membrane performance to obtain optimal condition. Therefore, the objectives of this study are determining the effect of variable process in membrane fabrication and several modification techniques on membrane performance. The membranes were fabricated via dry-wet phase inversion method. The process variables of this experiment are varying the Zeolite concentration by low level 1% weight and 3% weight, UV irradiation time low level 2 minutes and high level 6 minutes, thermal annealing temperature low level 160°C and high level 180°C. The experiment runs were designed using central composite design. From the research that has been perfromed, PES/Zeolit membrane has a higher permeability after being irradiated by UV light and denser pore after heating and the longer of annealing time.

  12. Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

    International Nuclear Information System (INIS)

    He, H.Y.; Huang, J.F.; Cao, L.Y.; Wang, L.S.

    2006-01-01

    Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (200) /I (117) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 deg. C followed by rapid thermal annealing for 3, 10 and 20 min at 700 deg. C, respectively (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 deg. C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 0.719 were obtained by preheating the film from room temperature at 20 deg. C/min followed by annealing for 10 min at 700 deg. C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 deg. C for 10 min followed by rapid thermal annealing for 3 min at 700 deg. C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 deg. C without preannealing resulted in columnar crystallite perpendicular to substrate surface

  13. Thermal Stability of P-Type BiSbTe Alloys Prepared by Melt Spinning and Rapid Sintering

    Directory of Open Access Journals (Sweden)

    Yun Zheng

    2017-06-01

    Full Text Available P-type BiSbTe alloys have been widely implemented in waste heat recovery from low-grade heat sources below 600 K, which may involve assorted environments and conditions, such as long-term service, high-temperature exposure (generally 473–573 K and mechanical forces. It is important to evaluate the service performance of these materials in order to prevent possible failures in advance and extend the life cycle. In this study, p-type Bi0.5Sb1.5Te3 commercial zone-melting (ZM ingots were processed by melt spinning and subsequent plasma-activated sintering (MS-PAS, and were then subjected to vacuum-annealing at 473 and 573 K, respectively, for one week. The results show that MS-PAS samples exhibit excellent thermal stability when annealed at 473 K. However, thermal annealing at 573 K for MS-PAS specimens leads to the distinct sublimation of the element Te, which degrades the hole concentration remarkably and results in inferior thermoelectric performance. Furthermore, MS-PAS samples annealed at 473 K demonstrate a slight enhancement in flexural and compressive strengths, probably due to the reduction of residual stress induced during the sintering process. The current work guides the reliable application of p-type Bi0.5Sb1.5Te3 compounds prepared by the MS-PAS technique.

  14. Modelling and multiparameter control applied to a fast annealing furnace; Modelisation et Commande Multivariable Appliquee a un Four de Recuit Rapide

    Energy Technology Data Exchange (ETDEWEB)

    Bardon, B

    1995-01-31

    Rapid Thermal Processing (RTP) technology is a delicate field to the control engineer. Its compatibility to single-wafer processing is well suited for performing thermal steps in the state-of-the-art integrated circuit (IC) manufacturing. Control of the wafer temperature during the processing is essential. The main problem in the scalar (SISO) approach is due to the steady-state temperature uniformity. A solution to this problem is to vary the spatial energy flux distribution radiating to the wafer. To achieve this requirement, one approach is the use a multivariable (MIMO) control law to manipulate independently the different lamps banks. Thermal process are highly non linear and distributed in nature. Besides, these non-linearities implies process dynamics variations. In this work, after physically describing our process about a reference value of the power and temperature, we present an off-line identification procedure (in the aim of devising a linear multivariable model) using input/output data for different reference values from real experiences and multi-variable least square algorithm. Afterwards, particular attention is devoted to the structure parameter determination of the linear model. Based on the linear model, a multivariable PID controller is designed. The controller coupled with the least mean square identification algorithm is tested under real conditions. The performances of the MIMO adaptive controller is also evaluated in tracking as well as in regulation. (author) refs.

  15. Effects of thermal annealing on the optical, spectroscopic, and structural properties of tris (8-hydroxyquinolinate) gallium films grown on quartz substrates

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, Fahmi Fariq, E-mail: fahmi982@gmail.com [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science and Engineering, University of Koya, Koya, Kurdistan Region (Iraq); Sulaiman, Khaulah [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2011-10-03

    Highlights: {yields} Achieving a broad absorption band for Gaq3 covering the whole UV and some parts of visible spectra. {yields} Increasing photoluminescence emission to five times stronger than that of pristine film. {yields} Conformational changes towards the formation of crystalline {alpha}-Gaq3 polymorph. {yields} Determination of glass transition temperature for Gaq3 (T{sub g} 182 deg. C) and Alq3 (T{sub g} = 173 deg. C). {yields} Improving and understanding the physical properties of Gaq3 film by means of thermal treatment. - Abstract: In this study we report the optical, spectroscopic, and structural properties of vacuum deposited tris (8-hydroxyquinolinate) gallium film upon thermal annealing in the temperature range from 85 deg. C to 255 deg. C under a flowing nitrogen gas for 10 min. The optical UV-vis-NIR and luminescence spectroscopy measurements were performed to estimate the absorption bands, optical energy gap (E{sub g}), and photoluminescence (PL) of the films. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) techniques were used to probe the spectroscopic and structural nature of the films. We show that, by annealing the films from 85 deg. C to 235 deg. C, it is possible to achieve an enhanced absorption and increased photoluminescence to five times stronger than that of the pristine film. The PL quenching at 255 deg. C was attributed to the presence of plainer chains allow easy going for excitons to a long distance due to the crystalline region formation of {alpha}-Gaq3 polymorph. The reduction in E{sub g} and infrared absorption bands upon annealing were referred to the enhancement in {pi}-{pi} interchain interaction and conformational changes by re-arrangement of the Gaq3 quinolinate ligands, respectively. Stokes shift for the films were observed and calculated. From the differential scanning calorimetry, DSC measurements, higher glass transition temperature was observed for Gaq3 (T{sub g} = 182 deg. C) compared to

  16. Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Biro, D.; Preu, R.; Schultz, O.; Peters, S.; Huljic, D.M.; Zickermann, D.; Schindler, R.; Luedemann, R.; Willeke, G. [Fraunhofer Institute for Solar Energy Systems ISE, Freiburg (Germany)

    2002-10-01

    A novel diffusion system for in-line rapid thermal diffusion is presented. The lamp-heated furnace has a low thermal mass and a metal free transport system based on the walking beam principle. The furnace has been used to process first solar cells with lightly and highly doped emitters respectively. Solar cells with shallow lightly doped emitters show that the emitters processed in the new device can be well passivated. Shallow emitters with sheet resistances of up to 40/sq. have been contacted successfully by means of screen printing and firing through a SiN{sub x} antireflection coating. (author)

  17. Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

    NARCIS (Netherlands)

    Macco, B.; Melskens, J.; Podraza, N.J.; Arts, K.; Pugh, C.; Thomas, O.; Kessels, W.M.M.

    2017-01-01

    Using an inductively coupled plasma, hydrogenated amorphous silicon (a-Si:H) films have been prepared at very low temperatures (<50 °C) to provide crystalline silicon (c-Si) surface passivation. Despite the limited nanostructural quality of the a-Si:H bulk, a surprisingly high minority carrier

  18. Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mota-Santiago, Pablo-Ernesto [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Crespo-Sosa, Alejandro, E-mail: crespo@fisica.unam.mx [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico); Jimenez-Hernandez, Jose-Luis; Silva-Pereyra, Hector-Gabriel; Reyes-Esqueda, Jorge-Alejandro; Oliver, Alicia [Instituto de Fisica, Universidad Nacional Autonoma de Mexico A.P. 20-364 01000 Mexico D.F. (Mexico)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Systematic study on the formation of Ag and Au nano-particles in Al{sub 2}O{sub 3}. Black-Right-Pointing-Pointer Annealing in a reducing atmosphere, below the metal melting point is more suitable. Black-Right-Pointing-Pointer Au nano-particles grow up to 15 nm and Ag nano-particles up to 45 nm in radius. Black-Right-Pointing-Pointer Ostwald ripening is the mechanism responsible for the formation of large nanoparticles. Black-Right-Pointing-Pointer Optical properties of metallic nano-particles in Al{sub 2}O{sub 3} can be related to their size. - Abstract: Metallic nano-particles embedded in transparent dielectrics are very important for new technological applications because of their unique optical properties. These properties depend strongly on the size and shape of the nano-particles. In order to achieve the synthesis of metallic nano-particles it has been used the technique of ion implantation. This is a very common technique because it allows the control of the depth and concentration of the metallic ions inside the sample, limited mostly by straggling, without introducing other contaminant agents. The purpose of this work was to measure the size of the nano-particles grown under different conditions in Sapphire and its size evolution during the growth process. To achieve this goal, {alpha}-Al{sub 2}O{sub 3} single crystals were implanted with Ag or Au ions at room temperature with different fluences (from 2 Multiplication-Sign 10{sup 16} ions/cm{sup 2} to 8 Multiplication-Sign 10{sup 16} ions/cm{sup 2}). Afterwards, the samples were annealed at different temperatures (from 600 Degree-Sign C to 1100 Degree-Sign C) in oxidising, reducing, Ar or N{sub 2} atmospheres. We measured the ion depth profile by Rutherford Backscattering Spectroscopy (RBS) and the nano-crystals size distribution by using two methods, the surface plasmon resonance in the optical extinction spectrum and the Transmission Electron Microscopy (TEM).

  19. Thermal-stress analysis of HTGR fuel and control rod fuel blocks in in-block carbonization and annealing furnace

    International Nuclear Information System (INIS)

    Gwaltney, R.C.; McAfee, W.J.

    1977-01-01

    A new method for performing thermal stress analyses in structures with multiple penetrations was applied to these analyses. This method couples the development of an equivalent thermal conductivity for the blocks, a technique that has been used extensively for modeling the thermal characteristics of reactor cores, with the use of the equivalent solid plate method for stress analysis. Using this equivalent thermal conductivity, which models as one material the heat transfer characteristics of the fuel, coolant, and graphite two-dimensional, steady-state thermal analyses of the fuel and control rod fuel blocks were performed to establish all temperature boundaries required for the stress analyses. In applying the equivalent solid plate method, the region of penetrations being modeled was replaced by a pseudo material having the same dimensions but whose materials properties were adjusted to account for the penetration. The peak stresses and strains were determined by applying stress and strain intensification factors to the calculated distributions. The condition studied was where the blocks were located near the center of the furnace. In this position, the axial surface of the block is heated near one end and cooled near the other. The approximate axial surface temperatures ranged from 1521 0 C at both the heated and the cooled ends to a peak of 1800 0 C near the center. Five specific cases were analyzed: plane (two-dimensional thermal, plane stress strain) analyses of each end of a standard fuel block (2 cases), plane analyses of each end of a control rod fuel block (2 cases), and a two-dimensional analysis of a fuel block treated as an axisymmetric cylind

  20. Thermal and mechanical effect during rapid heating of astroloy for improving structural integrity

    International Nuclear Information System (INIS)

    Popoolaa, A.P.I.; Oluwasegun, K.M.; Olorunniwo, O.E.; Atanda, P.O.; Aigbodion, V.S.

    2016-01-01

    The behaviour of γ′ phase to thermal and mechanical effects during rapid heating of Astroloy(Turbine Disc alloy) a Powder metallurgy (PM) nickel base superalloy has been investigated. The thermo-mechanical affected zone (TMAZ) and heat affected zone (HAZ) microstructure of an inertia friction welded Astroloy were simulated using a Gleeble thermo-mechanical simulation system. Detailed microstructural examination of the simulated TMAZ and HAZ and those present in actual inertial friction welded specimens showed that γ′ particles persisted during rapid heating up to a temperature where the formation of liquid is thermodynamically favoured, and subsequently re-solidified eutectically. The result obtained showed that forging during the thermo-mechanical simulation significantly enhanced resistance to weld liquation cracking of the alloy. This is attributable to strain-induced rapid isothermal dissolution of the constitutional liquation products within 150 μm from the centre of the forged sample. This was not observed in purely thermally simulated samples. The microstructure within the TMAZ of the as-welded alloy is similar to the microstructure in the forged Gleeble specimens. - Highlights: • The behaviour of γ′ phase to thermal and mechanical effects during rapid heating of Astrology • The thermo-mechanical affected zone (TMAZ) and heat affected zone (HAZ). • significantly enhanced resistance to weld liquation cracking of the alloy. • This was not observed in purely thermally simulated samples. • The microstructure within the TMAZ of the as-welded alloy is similar to the microstructure in the forged Gleeble specimens.

  1. Thermal and mechanical effect during rapid heating of astroloy for improving structural integrity

    Energy Technology Data Exchange (ETDEWEB)

    Popoolaa, A.P.I., E-mail: popoolaapi@tut.ac.za [Department of Chemical, Metallurgical and Materials Engineering, Tshwane University of Technology, Pretoria (South Africa); Oluwasegun, K.M. [Department of Materials Science and Engineering, Obafemi Awolowo University (Nigeria); Olorunniwo, O.E., E-mail: segun_nniwo@yahoo.com [Department of Chemical, Metallurgical and Materials Engineering, Tshwane University of Technology, Pretoria (South Africa); Department of Materials Science and Engineering, Obafemi Awolowo University (Nigeria); Atanda, P.O. [Department of Materials Science and Engineering, Obafemi Awolowo University (Nigeria); Aigbodion, V.S. [Department of Chemical, Metallurgical and Materials Engineering, Tshwane University of Technology, Pretoria (South Africa); Department of Metallurgical and Materials Engineering, University of Nigeria, Nsukka (Nigeria)

    2016-05-05

    The behaviour of γ′ phase to thermal and mechanical effects during rapid heating of Astroloy(Turbine Disc alloy) a Powder metallurgy (PM) nickel base superalloy has been investigated. The thermo-mechanical affected zone (TMAZ) and heat affected zone (HAZ) microstructure of an inertia friction welded Astroloy were simulated using a Gleeble thermo-mechanical simulation system. Detailed microstructural examination of the simulated TMAZ and HAZ and those present in actual inertial friction welded specimens showed that γ′ particles persisted during rapid heating up to a temperature where the formation of liquid is thermodynamically favoured, and subsequently re-solidified eutectically. The result obtained showed that forging during the thermo-mechanical simulation significantly enhanced resistance to weld liquation cracking of the alloy. This is attributable to strain-induced rapid isothermal dissolution of the constitutional liquation products within 150 μm from the centre of the forged sample. This was not observed in purely thermally simulated samples. The microstructure within the TMAZ of the as-welded alloy is similar to the microstructure in the forged Gleeble specimens. - Highlights: • The behaviour of γ′ phase to thermal and mechanical effects during rapid heating of Astrology • The thermo-mechanical affected zone (TMAZ) and heat affected zone (HAZ). • significantly enhanced resistance to weld liquation cracking of the alloy. • This was not observed in purely thermally simulated samples. • The microstructure within the TMAZ of the as-welded alloy is similar to the microstructure in the forged Gleeble specimens.

  2. Enhanced propylene/propane separation by thermal annealing of an intrinsically microporous Hydroxyl-functionalized polyimide membrane

    KAUST Repository

    Swaidan, Ramy J.; Ma, Xiaohua; Litwiller, Eric; Pinnau, Ingo

    2015-01-01

    Effective separation of propylene/propane is vital to the chemical industry where C3H6 is used as feedstock for a variety of important chemicals. The purity requirements are currently met with cryogenic distillation, which is an extremely energy-intensive process. Hybrid arrangements incorporating highly selective membranes (α>20) have been proposed to “debottleneck” the process and potentially improve the economics. Selective and permeable membranes can be obtained by the design of polymers of intrinsic microporosity (PIMs). In this work, a 250 °C annealed polyimide (PIM-6FDA-OH) membrane produced among the highest reported pure-gas C3H6/C3H8 selectivity of 30 for a solution-processable polymer to date. The high selectivity resulted from enhanced diffusivity selectivity due to the formation of inter-chain charge-transfer-complexes. Although there were some inevitable losses in selectivity under 50:50 mixed-gas feed conditions due to competitive sorption, relatively high selectivities were preserved due to enhanced plasticization resistance.

  3. Enhanced propylene/propane separation by thermal annealing of an intrinsically microporous Hydroxyl-functionalized polyimide membrane

    KAUST Repository

    Swaidan, Ramy Jawdat

    2015-08-06

    Effective separation of propylene/propane is vital to the chemical industry where C3H6 is used as feedstock for a variety of important chemicals. The purity requirements are currently met with cryogenic distillation, which is an extremely energy-intensive process. Hybrid arrangements incorporating highly selective membranes (α>20) have been proposed to “debottleneck” the process and potentially improve the economics. Selective and permeable membranes can be obtained by the design of polymers of intrinsic microporosity (PIMs). In this work, a 250 °C annealed polyimide (PIM-6FDA-OH) membrane produced among the highest reported pure-gas C3H6/C3H8 selectivity of 30 for a solution-processable polymer to date. The high selectivity resulted from enhanced diffusivity selectivity due to the formation of inter-chain charge-transfer-complexes. Although there were some inevitable losses in selectivity under 50:50 mixed-gas feed conditions due to competitive sorption, relatively high selectivities were preserved due to enhanced plasticization resistance.

  4. Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2006-01-01

    TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

  5. Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) films

    Energy Technology Data Exchange (ETDEWEB)

    Laskarakis, A., E-mail: alask@physics.auth.gr; Karagiannidis, P.G.; Georgiou, D.; Nikolaidou, D.M.; Logothetidis, S.

    2013-08-31

    Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible–far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. - Highlights: • Optical study of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) • The Drude model provides information for PEDOT:PSS conductivity. • The addition of dimethylsulfoxide increases the electrical conductivity of PEDOT:PSS. • The increase in conductivity is correlated to increase of PEDOT grain size. • The thermal treatment has a smaller effect on PEDOT:PSS properties.

  6. Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Laskarakis, A.; Karagiannidis, P.G.; Georgiou, D.; Nikolaidou, D.M.; Logothetidis, S.

    2013-01-01

    Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible–far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. - Highlights: • Optical study of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) • The Drude model provides information for PEDOT:PSS conductivity. • The addition of dimethylsulfoxide increases the electrical conductivity of PEDOT:PSS. • The increase in conductivity is correlated to increase of PEDOT grain size. • The thermal treatment has a smaller effect on PEDOT:PSS properties

  7. Effects of implantation temperature and thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in a-SiC:H

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T., E-mail: tania_tsvetkova@yahoo.co.uk [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Wright, C.D. [University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Kitova, S. [Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bontchev St., 1113 Sofia (Bulgaria); Bischoff, L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden (Germany); Zuk, J. [Institute of Physics, Maria Curie-Sklodovska University, Pl. M.Curie-Sklodovskiej 1, 20-031 Lublin (Poland)

    2013-07-15

    The effects of implantation temperature and post-implantation thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga{sup +}-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga{sup +} liquid metal ion sources. The fact that Ga has a very low melting point (T{sub m} = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga{sup +} ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  8. Thermodynamic analysis of the effect of annealing on the thermal stability of a Cu–Al–Ni–Mn shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Mazzer, E.M., E-mail: ericmazzer@gmail.com [Postgraduate Program in Materials Science and Engineering, Federal University of São Carlos, São Carlos, SP (Brazil); Kiminami, C.S.; Bolfarini, C.; Cava, R.D.; Botta, W.J.; Gargarella, P. [Department of Materials Engineering, Federal University of São Carlos, São Carlos, SP (Brazil)

    2015-05-20

    Highlights: • We evaluated the effect of annealing on a Cu-based shape memory alloy. • Stabilization was clarified in terms of the chemical and non-chemical energies. • Stabilization was related to the shift of transformations temperatures. • Insights into the role of stabilization of phases by thermodynamics approach. - Abstract: Shape memory alloys (SMA) usually exhibit shifts in the transformation temperatures with increasing the number of thermal cycles. These shifts result from an increased stability of the martensite during cycling and have an important role in the functionality of the material. The structural reasons for these changes are not fully understood and are investigated here by a thermodynamic approach. The variation in the transformation temperatures and in the chemical and non-chemical energy terms of the total energy involved in the transformation of a Cu–Al–Ni–Mn SMA was studied. Powder of this alloy was produced by gas atomization with size in the range of 32–45 μm and subsequently heat-treated at 180 °C, 250 °C and 300 °C during different times. The as-cast and heat-treated samples were investigated by differential scanning calorimetry, X-ray diffraction and scanning and transmission electron microscopy. Only a single martensitic β′ phase was formed at room temperature. It was observed an increase in the austenitic start transformation temperature (A{sub s}) as well as in the austenitic finish transformation temperature (A{sub f}) with increasing the annealing time and temperature. The shift in the transformation temperatures to higher values is attributed to a decrease of the latent heat of transformation and non-chemical energy term, caused by changes in the structural order of the martensite. This study shows that the variation of the transformation temperatures is strongly linked to the total energy components, which can give important information about the stability of the alloy.

  9. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  10. Combustion-Assisted Photonic Annealing of Printable Graphene Inks via Exothermic Binders.

    Science.gov (United States)

    Secor, Ethan B; Gao, Theodore Z; Dos Santos, Manuel H; Wallace, Shay G; Putz, Karl W; Hersam, Mark C

    2017-09-06

    High-throughput and low-temperature processing of high-performance nanomaterial inks is an important technical challenge for large-area, flexible printed electronics. In this report, we demonstrate nitrocellulose as an exothermic binder for photonic annealing of conductive graphene inks, leveraging the rapid decomposition kinetics and built-in energy of nitrocellulose to enable versatile process integration. This strategy results in superlative electrical properties that are comparable to extended thermal annealing at 350 °C, using a pulsed light process that is compatible with thermally sensitive substrates. The resulting porous microstructure and broad liquid-phase patterning compatibility are exploited for printed graphene microsupercapacitors on paper-based substrates.

  11. Improvement on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Esakky, Papanasam, E-mail: papanasamte@gmail.com; Kailath, Binsu J

    2017-08-15

    Highlights: • Post deposition annealing (PDA) and post metallization annealing (PMA) on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors. • Post deposition N{sub 2}O plasma annealing inhibits crystallization of HfO{sub 2} during high temperature annealing. • Plasma annealing followed by RTA in N{sub 2} results in formation of hafnium silicate at the HfO{sub 2}-SiC interface. • PDA reduces interface state density (D{sub it}) and gate leakage current density (J{sub g}) by order. • PMA in forming gas for 40 min results in better passivation and reduces D{sub it} by two orders and J{sub g} by thrice. - Abstract: HfO{sub 2} as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO{sub 2}/SiC capacitors offer higher sensitivity than SiO{sub 2}/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO{sub 2}/SiC interface. Effect of post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO{sub 2}/SiC MIS capacitors are reported in this work. N{sub 2}O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N{sub 2} result in formation of Hf silicate at the HfO{sub 2}/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO{sub 2}/SiC capacitors.

  12. In-situ X-Ray Analysis of Rapid Thermal Processing for Thin-Film Solar Cells: Closing the Gap between Production and Laboratory Efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Toney, Michael F. [SLAC National Accelerator Lab., Menlo Park, CA (United States); van Hest, Maikel F. A. M. [National Renewable Energy Lab. (NREL), Golden, CO (United States)

    2017-02-21

    For materials synthesis, it is well known that the material final state may not reach equilibrium and depends on the synthetic process. In particular, processes that quickly remove the available energy from the material may leave it in a metastable state and the metastability may actually impart desirable functional properties. By its very nature, Rapid thermal processing (RTP) is ideally suited to produce such metastable materials. However, metastability and the dynamics of reaching a metastable state are poorly understood, since this is best accomplished through in situ monitoring. In this regard, RTP is particularly challenging as the processing time are very short (seconds to minutes). As a result, there is only poor understanding, and hence use, of RTP in industry. This is potentially a cost-increasing limitation, because RTP can decrease cost by decreasing processing time, and as such, increase throughput and decrease the total thermal budget of processing - a significant cost. RTP is already being used for key processing steps in PV technologies. With silicon wafer PV, it is used for establishing electrical contact between the Ag metal grid and the silicon (known as firing). In this process, a silicon wafer with deposited metal/frit in a grid pattern is heated rapidly to temperatures between 750 and 800 ºC. The processing time when the temperature is held above 600ºC is short (<5 seconds). This process has historically been optimized empirically and it is unclear how the thermal processing affects formation of the final contact between the metal and the silicon. In the case of thin-film PV, RTP has been demonstrated in the process of making absorber layers, i.e. CIGS and CZTS. Use of RTP can reduce the processing time from 10s of minutes to seconds, reducing the thermal budget and increasing the throughput significantly. The conversion from precursor material to final PV material is not well understood, and most of the process optimization is done

  13. Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

    Directory of Open Access Journals (Sweden)

    Jae Kwon Jeon

    2017-12-01

    Full Text Available We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO thin-film transistor (TFT to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing and then at 250 oC in vacuum for 10 h (2nd step annealing. It is found that the threshold voltage (VTH changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS.

  14. Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

    Science.gov (United States)

    Jeon, Jae Kwon; Um, Jae Gwang; Lee, Suhui; Jang, Jin

    2017-12-01

    We report two-step annealing, high temperature and sequent low temperature, for amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) to improve its stability and device performance. The annealing is carried out at 300 oC in N2 ambient for 1 h (1st step annealing) and then at 250 oC in vacuum for 10 h (2nd step annealing). It is found that the threshold voltage (VTH) changes from 0.4 V to -2.0 V by the 1st step annealing and to +0.6 V by 2nd step annealing. The mobility changes from 18 cm2V-1s-1 to 25 cm2V-1s-1 by 1st step and decreases to 20 cm2V-1s-1 by 2nd step annealing. The VTH shift by positive bias temperature stress (PBTS) is 3.7 V for the as-prepared TFT, and 1.7 V for the 1st step annealed TFT, and 1.3 V for the 2nd step annealed TFT. The XPS (X-ray photoelectron spectroscopy) depth analysis indicates that the reduction in O-H bonds at the top interface (SiO2/a-IGZO) by 2nd step annealing appears, which is related to the positive VTH shift and smaller VTH shift by PBTS.

  15. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  16. Thermal-stress analysis of HTGR fuel and control rod fuel blocks in in-block carbonization and annealing furnace

    International Nuclear Information System (INIS)

    Gwaltney, R.C.; McAfee, W.J.

    1977-01-01

    The equivalent solid plate method, in conjunction with two-dimensional plane stress and plane strain analyses, was used in assessing the thermal stress behavior of HTGR fuel and control rod fuel blocks. For the control rod fuel blocks, particular attention was given to ascertaining the effects of the reserve shutdown hole and the control rod channel holes. The assumed safety factor of 2 on the failure criteria was considered adequate to account for neglecting the axial temperature gradient in the plane analyses of the ends of the blocks. The analyses indicated that the maximum calculated tensile stress values were smaller than the criteria values except for the plane strain analysis of the control rod fuel block end surfaces and the axisymmetric analysis of the fuel block as a circular cylinder. However, most of the maximum calculated strain values were greater than the criteria values

  17. Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.

    Science.gov (United States)

    Wickman, B; Bastos Fanta, A; Burrows, A; Hellman, A; Wagner, J B; Iandolo, B

    2017-01-16

    Hematite is a promising and extensively investigated material for various photoelectrochemical (PEC) processes for energy conversion and storage, in particular for oxidation reactions. Thermal treatments during synthesis of hematite are found to affect the performance of hematite electrodes considerably. Herein, we present hematite thin films fabricated via one-step oxidation of Fe by rapid thermal processing (RTP). In particular, we investigate the effect of oxidation temperature on the PEC properties of hematite. Films prepared at 750 °C show the highest activity towards water oxidation. These films show the largest average grain size and the highest charge carrier density, as determined from electron microscopy and impedance spectroscopy analysis. We believe that the fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance.

  18. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

    Science.gov (United States)

    Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

    2016-12-01

    Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

  19. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  20. Control of luminescence emitted by Cd{sub 1-x}Mn{sub x}S nanocrystals in a glass matrix: x concentration and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Freitas Neto, Ernesto S; Dantas, Noelio O [Laboratorio de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Fisica, Universidade Federal de Uberlandia, CP 593, CEP 38400-902, Uberlandia, Minas Gerais (Brazil); Barbosa Neto, Newton M [Grupo de Espectroscopia de Materiais (GEM), Instituto de Fisica, Universidade Federal de Uberlandia, CP 593, CEP 38400-902, Uberlandia, Minas Gerais (Brazil); Guedes, Ilde [Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, CEP 60455-760, Fortaleza, Ceara (Brazil); Chen, Felipe, E-mail: ernestosfn@yahoo.com.br [Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC, CEP 09210-170, Santo Andre, Sao Paulo (Brazil)

    2011-03-11

    Cd{sub 1-x}Mn{sub x}S nanocrystals (NCs) were successfully grown in a glass matrix and investigated by photoluminescence (PL), electron paramagnetic resonance (EPR) and magnetic force microscopy (MFM). We verified that the luminescent properties of these NCs can be controlled both by changing the x concentration and by thermal annealing of the samples. The EPR and PL data showed that the characteristic emission of Mn{sup 2+} ions ({sup 4}T{sub 1}-{sup 6}A{sub 1}) is only observed when this magnetic impurity is substitutionally incorporated in the Cd{sub 1-x}Mn{sub x}S NC core (site S{sub I}). Besides, it was observed that the emission ({sup 4}T{sub 1}-{sup 6}A{sub 1}) suppression, caused by the Mn{sup 2+} ion presence near the surface (site S{sub II}) of the Cd{sub 1-x}Mn{sub x}S NCs, is independent of the host material. The MFM images also confirmed the high quality of the Cd{sub 1-x}Mn{sub x}S NC samples, showing a uniform distribution of total magnetic moments in the nanoparticles.

  1. Crystallographic study of Si and ZrN coated U–Mo atomised particles and of their interaction with al under thermal annealing

    International Nuclear Information System (INIS)

    Zweifel, T.; Palancher, H.; Leenaers, A.; Bonnin, A.; Honkimaki, V.; Tucoulou, R.; Van Den Berghe, S.; Jungwirth, R.; Charollais, F.; Petry, W.

    2013-01-01

    A new type of high density fuel is needed for the conversion of research and test reactors from high to lower enriched uranium. The most promising one is a dispersion of atomized uranium-molybdenum (U–Mo) particles in an Al matrix. However, during in-pile irradiation the growth of an interaction layer between the U–Mo and the Al matrix strongly limits the fuel’s performance. To improve the in-pile behaviour, the U–Mo particles can be coated with protective layers. The SELENIUM (Surface Engineering of Low ENrIched Uranium–Molybdenum) fuel development project consists of the production, irradiation and post-irradiation examination of 2 flat, full-size dispersion fuel plates containing respectively Si and ZrN coated U–Mo atomized powder dispersed in a pure Al matrix. In this paper X-ray diffraction analyses of the Si and ZrN layers after deposition, fuel plate manufacturing and thermal annealing are reported. It was found for the U–Mo particles coated with ZrN (thickness 1 μm), that the layer is crystalline, and exhibits lower density than the theoretical one. Fuel plate manufacturing does not strongly influence these crystallographic features. For the U–Mo particles coated with Si (thickness 0.6 μm), the measurements of the as received material suggest an amorphous state of the deposited layer. Fuel plate manufacturing strongly modifies its composition: Si reacts with the U–Mo particles and the Al matrix to grow U(Al, Si) 3 and U 3 Si 5 phases. Finally both coatings have shown excellent performances under thermal treatment by limiting drastically the U–Mo/Al interdiffusion

  2. Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

    International Nuclear Information System (INIS)

    Lee, Keunhee; Ki, Hyungson

    2016-01-01

    We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

  3. Effects of Al substitution and thermal annealing on magnetoelectric Ba0.5Sr1.5Zn2Fe12O22 investigated by the enhancement factor of 57Fe nuclear magnetic resonance.

    Science.gov (United States)

    Kwon, Sangil; Kang, Byeongki; Kim, Changsoo; Jo, Euna; Lee, Soonchil; Chai, Yi Sheng; Chun, Sae Hwan; Kim, Kee Hoon

    2014-04-09

    The magnetoelectric properties of hexaferrite Ba0.5Sr1.5Zn2Fe12O22 are significantly improved by Al substitution and thermal annealing. Measuring the enhancement factor of 57Fe NMR, we found direct microscopic evidence that the magnetic moments of the L and S blocks are rotated by a magnetic field in such a way as to increase the net magnetic moment of a magnetic unit, even after the field is removed. Al substitution makes magnetoelectric property arise easily by suppressing the easy-plane anisotropy. The effect of thermal annealing is to stabilize the multiferroic state by reducing the number of pinning sites and the electron spin fluctuation. The transverse conic structure gradually changes to the alternating longitudinal conic structure where spins fluctuate more severely.

  4. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case.

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.

  5. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  6. The Rotary Zone Thermal Cycler: A Low-Power System Enabling Automated Rapid PCR

    Science.gov (United States)

    Bartsch, Michael S.; Renzi, Ronald F.; Van de Vreugde, James L.; Kim, Hanyoup; Knight, Daniel L.; Sinha, Anupama; Branda, Steven S.; Patel, Kamlesh D.

    2015-01-01

    Advances in molecular biology, microfluidics, and laboratory automation continue to expand the accessibility and applicability of these methods beyond the confines of conventional, centralized laboratory facilities and into point of use roles in clinical, military, forensic, and field-deployed applications. As a result, there is a growing need to adapt the unit operations of molecular biology (e.g., aliquoting, centrifuging, mixing, and thermal cycling) to compact, portable, low-power, and automation-ready formats. Here we present one such adaptation, the rotary zone thermal cycler (RZTC), a novel wheel-based device capable of cycling up to four different fixed-temperature blocks into contact with a stationary 4-microliter capillary-bound sample to realize 1-3 second transitions with steady state heater power of less than 10 W. We demonstrate the utility of the RZTC for DNA amplification as part of a highly integrated rotary zone PCR (rzPCR) system that uses low-volume valves and syringe-based fluid handling to automate sample loading and unloading, thermal cycling, and between-run cleaning functionalities in a compact, modular form factor. In addition to characterizing the performance of the RZTC and the efficacy of different online cleaning protocols, we present preliminary results for rapid single-plex PCR, multiplex short tandem repeat (STR) amplification, and second strand cDNA synthesis. PMID:25826708

  7. The rotary zone thermal cycler: a low-power system enabling automated rapid PCR.

    Directory of Open Access Journals (Sweden)

    Michael S Bartsch

    Full Text Available Advances in molecular biology, microfluidics, and laboratory automation continue to expand the accessibility and applicability of these methods beyond the confines of conventional, centralized laboratory facilities and into point of use roles in clinical, military, forensic, and field-deployed applications. As a result, there is a growing need to adapt the unit operations of molecular biology (e.g., aliquoting, centrifuging, mixing, and thermal cycling to compact, portable, low-power, and automation-ready formats. Here we present one such adaptation, the rotary zone thermal cycler (RZTC, a novel wheel-based device capable of cycling up to four different fixed-temperature blocks into contact with a stationary 4-microliter capillary-bound sample to realize 1-3 second transitions with steady state heater power of less than 10 W. We demonstrate the utility of the RZTC for DNA amplification as part of a highly integrated rotary zone PCR (rzPCR system that uses low-volume valves and syringe-based fluid handling to automate sample loading and unloading, thermal cycling, and between-run cleaning functionalities in a compact, modular form factor. In addition to characterizing the performance of the RZTC and the efficacy of different online cleaning protocols, we present preliminary results for rapid single-plex PCR, multiplex short tandem repeat (STR amplification, and second strand cDNA synthesis.

  8. Subcritical thermal convection of liquid metals in a rapidly rotating sphere

    Science.gov (United States)

    Cardin, P.; Schaeffer, N.; Guervilly, C.; Kaplan, E.

    2017-12-01

    Planetary cores consist of liquid metals (low Prandtl number Pr) that convect as the core cools. Here we study nonlinear convection in a rotating (low Ekman number Ek) planetary core using a fully 3D direct (down to Ek=10-7) and a quasi geostrophic (down to Ek=10-10) numerical simulations. Near the critical thermal forcing (Rayleigh number Ra), convection onsets as thermal Rossby waves, but as Ra increases, this state is superceded by one dominated by advection. At moderate rotation, these states (here called the weak branch and strong branch, respectively) are continuously connected. As the planetary core rotates faster, the continuous transition is replaced by hysteresis cycles and subcriticality until the weak branch disappears entirely and the strong branch onsets in a turbulent state at Ekforcing decreases well below the linear onset of convection (Ra 0.4Racrit in this study for Ek=10-10 and Pr=0.01). We highlight the importance of the Reynolds stress, which is required for convection to persist below the linear onset. We further note the presence of a strong zonal flow that is nonetheless unimportant to the convective subcritical state. Our study suggests that, in the asymptotic regime of rapid rotation relevant for planetary interiors, thermal convection of liquid metals in a sphere onsets and shuts down through a subcritical bifurcation. This scenario may be relevant to explain the lunar and martian dynamo extinctions.

  9. A predictive model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system

    Energy Technology Data Exchange (ETDEWEB)

    Toprac, A.J.; Trachtenberg, I.; Edgar, T.F. (Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering)

    1994-06-01

    The chemical vapor deposition of polysilicon from thermally activated silane in a cold wall, single-wafer rapid thermal system was studied by experimentation at a variety of low pressure conditions, including very high temperatures. The effect of diluent gas on polysilicon deposition rates was examined using hydrogen, helium, and krypton. A mass-transfer model for the chemical vapor deposition of polysilicon in a cold wall, rapid thermal system was developed. This model was used to produce an empirical rate expression for silicon deposition from silane by regressing kinetic parameters to fit experimental data. The resulting model provided accurate predictions over widely varying conditions in the experimental data.

  10. Studies on Rapidly Frozen Suspensions of Yeast Cells by Differential Thermal Analysis and Conductometry

    Science.gov (United States)

    Mazur, Peter

    1963-01-01

    Few, if any, yeast cells survived rapid cooling to -196°C and subsequent slow warming. After rapid freezing, the suspensions absorbed latent heat of fusion between -15° and 0°C during warming, and the relation between the amount of heat absorbed and the concentration of cells was the same as that in equivalent KCl solutions, indicating that frozen suspensions behave thermally like frozen solutions. The amount of heat absorbed was such that more than 80 per cent of the intracellular solution had to be frozen. The conductometric behavior of frozen suspensions showed that cell solutes were still inside the cells and surrounded by an intact cell membrane at the time heat was being absorbed. Two models are consistent with these findings. The first assumes that intracellular freezing has taken place; the second that all freezable water has left the cells and frozen externally. The latter model is ruled out because rapidly cooled cells do not shrink by an amount equal to the volume of water that would have to be withdrawn to prevent internal freezing. PMID:13934216

  11. A Rapid and Low-Cost PCR Thermal Cycler for Infectious Disease Diagnostics.

    Directory of Open Access Journals (Sweden)

    Kamfai Chan

    Full Text Available The ability to make rapid diagnosis of infectious diseases broadly available in a portable, low-cost format would mark a great step forward in global health. Many molecular diagnostic assays are developed based on using thermal cyclers to carry out polymerase chain reaction (PCR and reverse-transcription PCR for DNA and RNA amplification and detection, respectively. Unfortunately, most commercial thermal cyclers are expensive and need continuous electrical power supply, so they are not suitable for uses in low-resource settings. We have previously reported a low-cost and simple approach to amplify DNA using vacuum insulated stainless steel thermoses food cans, which we have named it thermos thermal cycler or TTC. Here, we describe the use of an improved set up to enable the detection of viral RNA targets by reverse-transcription PCR (RT-PCR, thus expanding the TTC's ability to identify highly infectious, RNA virus-based diseases in low resource settings. The TTC was successful in demonstrating high-speed and sensitive detection of DNA or RNA targets of sexually transmitted diseases, HIV/AIDS, Ebola hemorrhagic fever, and dengue fever. Our innovative TTC costs less than $200 to build and has a capacity of at least eight tubes. In terms of speed, the TTC's performance exceeded that of commercial thermal cyclers tested. When coupled with low-cost endpoint detection technologies such as nucleic acid lateral-flow assay or a cell-phone-based fluorescence detector, the TTC will increase the availability of on-site molecular diagnostics in low-resource settings.

  12. Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

    International Nuclear Information System (INIS)

    Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

    2011-01-01

    Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

  13. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  14. Mesoscale Benchmark Demonstration Problem 1: Mesoscale Simulations of Intra-granular Fission Gas Bubbles in UO2 under Post-irradiation Thermal Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yulan; Hu, Shenyang Y.; Montgomery, Robert; Gao, Fei; Sun, Xin; Tonks, Michael; Biner, Bullent; Millet, Paul; Tikare, Veena; Radhakrishnan, Balasubramaniam; Andersson , David

    2012-04-11

    A study was conducted to evaluate the capabilities of different numerical methods used to represent microstructure behavior at the mesoscale for irradiated material using an idealized benchmark problem. The purpose of the mesoscale benchmark problem was to provide a common basis to assess several mesoscale methods with the objective of identifying the strengths and areas of improvement in the predictive modeling of microstructure evolution. In this work, mesoscale models (phase-field, Potts, and kinetic Monte Carlo) developed by PNNL, INL, SNL, and ORNL were used to calculate the evolution kinetics of intra-granular fission gas bubbles in UO2 fuel under post-irradiation thermal annealing conditions. The benchmark problem was constructed to include important microstructural evolution mechanisms on the kinetics of intra-granular fission gas bubble behavior such as the atomic diffusion of Xe atoms, U vacancies, and O vacancies, the effect of vacancy capture and emission from defects, and the elastic interaction of non-equilibrium gas bubbles. An idealized set of assumptions was imposed on the benchmark problem to simplify the mechanisms considered. The capability and numerical efficiency of different models are compared against selected experimental and simulation results. These comparisons find that the phase-field methods, by the nature of the free energy formulation, are able to represent a larger subset of the mechanisms influencing the intra-granular bubble growth and coarsening mechanisms in the idealized benchmark problem as compared to the Potts and kinetic Monte Carlo methods. It is recognized that the mesoscale benchmark problem as formulated does not specifically highlight the strengths of the discrete particle modeling used in the Potts and kinetic Monte Carlo methods. Future efforts are recommended to construct increasingly more complex mesoscale benchmark problems to further verify and validate the predictive capabilities of the mesoscale modeling

  15. Modulation of the thermoluminescence glow curve of sol-gel synthesized SiO{sub 2} and Si O-2:Eu through thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Salas J, Ch. J.; Cruz V, C. [Universidad de Sonora, Departamento de Investigacion en Polimeros y Materiales, Apdo. Postal 130, 83000 Hermosillo, Sonora (Mexico); Bernal, R. [Universidad de Sonora, Departamento de Investigacion en Fisica, Apdo. Postal 5-088, 83190 Hermosillo, Sonora (Mexico); Castano, V. M., E-mail: salasjuarez@gimmunison.com [UNAM, Centro de Fisica Aplicada y Tecnologia Avanzada, Apdo. Postal 1-1010, 76000 Queretaro, Qro. (Mexico)

    2015-10-15

    Full text: Due to the increasing use of ionizing radiations, is necessary to monitor the radiation fields and exposure doses in facilities in which they are used. Different facilities or applications involve the use of different radiation and doses, and the sort of needed dosimetry also varies. Sometimes a conventional thermoluminescence (Tl) dosimetry satisfy the requirements since the record of the accumulated dose in a time interval is enough, but other cases could require for real-time measurement of a radiation field, being required a non-Tl dosimetric technique. On the other hand, different applications involve the use of different dose ranges, and so dosimeters with different sensitivities are needed. To solve the diverse needs of radiation detectors and dosimeters, a lot of phosphors materials has been characterized concerning their dosimetric capabilities. For medical application, biocompatible materials are desirable. In this work, we present experimental evidence that Sol-Gel synthesized SiO{sub 2} and SiO{sub 2}:Eu phosphors exhibit Tl glow curves composed by the superposition of several individual glow peaks each located at different temperature ranging from values below 100 up to temperatures greater than 400 degrees C, whose relative sensitivities can be modified by subjecting the phosphors to different thermal annealing. By modulating the relative intensities of the individual Tl peaks, glow curves with different shapes are obtained in such a way that SiO{sub 2} and SiO{sub 2}:Eu can be used to develop dosimeters useful for different dose ranges, and for both, conventional thermoluminescence dosimetry and non-thermoluminescence afterglow-based) dosimetry. (Author)

  16. Modulation of the thermoluminescence glow curve of sol-gel synthesized SiO2 and Si O-2:Eu through thermal annealing

    International Nuclear Information System (INIS)

    Salas J, Ch. J.; Cruz V, C.; Bernal, R.; Castano, V. M.

    2015-10-01

    Full text: Due to the increasing use of ionizing radiations, is necessary to monitor the radiation fields and exposure doses in facilities in which they are used. Different facilities or applications involve the use of different radiation and doses, and the sort of needed dosimetry also varies. Sometimes a conventional thermoluminescence (Tl) dosimetry satisfy the requirements since the record of the accumulated dose in a time interval is enough, but other cases could require for real-time measurement of a radiation field, being required a non-Tl dosimetric technique. On the other hand, different applications involve the use of different dose ranges, and so dosimeters with different sensitivities are needed. To solve the diverse needs of radiation detectors and dosimeters, a lot of phosphors materials has been characterized concerning their dosimetric capabilities. For medical application, biocompatible materials are desirable. In this work, we present experimental evidence that Sol-Gel synthesized SiO 2 and SiO 2 :Eu phosphors exhibit Tl glow curves composed by the superposition of several individual glow peaks each located at different temperature ranging from values below 100 up to temperatures greater than 400 degrees C, whose relative sensitivities can be modified by subjecting the phosphors to different thermal annealing. By modulating the relative intensities of the individual Tl peaks, glow curves with different shapes are obtained in such a way that SiO 2 and SiO 2 :Eu can be used to develop dosimeters useful for different dose ranges, and for both, conventional thermoluminescence dosimetry and non-thermoluminescence afterglow-based) dosimetry. (Author)

  17. The thermal dependency of locomotor performance evolves rapidly within an invasive species.

    Science.gov (United States)

    Kosmala, Georgia K; Brown, Gregory P; Christian, Keith A; Hudson, Cameron M; Shine, Richard

    2018-05-01

    Biological invasions can stimulate rapid shifts in organismal performance, via both plasticity and adaptation. We can distinguish between these two proximate mechanisms by rearing offspring from populations under identical conditions and measuring their locomotor abilities in standardized trials. We collected adult cane toads ( Rhinella marina ) from invasive populations that inhabit regions of Australia with different climatic conditions. We bred those toads and raised their offspring under common-garden conditions before testing their locomotor performance. At high (but not low) temperatures, offspring of individuals from a hotter location (northwestern Australia) outperformed offspring of conspecifics from a cooler location (northeastern Australia). This disparity indicates that, within less than 100 years, thermal performance in cane toads has adapted to the novel abiotic challenges that cane toads have encountered during their invasion of tropical Australia.

  18. Application of rapid thermal processing on SiNx thin film to solar cells

    Institute of Scientific and Technical Information of China (English)

    Youjie LI; Peiqing LUO; Zhibin ZHOU; Rongqiang CUI; Jianhua HUANG; Jingxiao WANG

    2008-01-01

    Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mechanism and the application of the technique to silicon solar cells fabrication were dis-cussed. A main achievement is an increase of the minority lifetime in silicon wafer with SiNx thin film by about 200% after the RTP was reached. PC-1D simulation results exhibit an enhancement of the efficiency of the solar cell by 0.42% coming from the minority lifetime improvement. The same experiment was also conducted with P-diffusion silicon wafers, but the increment of minority lifetime is just about 55%. It could be expected to improve the solar cell efficiency if it would be used in silicon solar cells fabrication with the combination of laser firing contact technique.

  19. A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

    2013-10-05

    Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

  20. Characteristics of Turbulent Airflow Deduced from Rapid Surface Thermal Fluctuations: An Infrared Surface Anemometer

    Science.gov (United States)

    Aminzadeh, Milad; Breitenstein, Daniel; Or, Dani

    2017-12-01

    The intermittent nature of turbulent airflow interacting with the surface is readily observable in fluctuations of the surface temperature resulting from the thermal imprints of eddies sweeping the surface. Rapid infrared thermography has recently been used to quantify characteristics of the near-surface turbulent airflow interacting with the evaporating surfaces. We aim to extend this technique by using single-point rapid infrared measurements to quantify properties of a turbulent flow, including surface exchange processes, with a view towards the development of an infrared surface anemometer. The parameters for the surface-eddy renewal (α and β ) are inferred from infrared measurements of a single-point on the surface of a heat plate placed in a wind tunnel with prescribed wind speeds and constant mean temperatures of the surface. Thermally-deduced parameters are in agreement with values obtained from standard three-dimensional ultrasonic anemometer measurements close to the plate surface (e.g., α = 3 and β = 1/26 (ms)^{-1} for the infrared, and α = 3 and β = 1/19 (ms)^{-1} for the sonic-anemometer measurements). The infrared-based turbulence parameters provide new insights into the role of surface temperature and buoyancy on the inherent characteristics of interacting eddies. The link between the eddy-spectrum shape parameter α and the infrared window size representing the infrared field of view is investigated. The results resemble the effect of the sampling height above the ground in sonic anemometer measurements, which enables the detection of larger eddies with higher values of α . The physical basis and tests of the proposed method support the potential for remote quantification of the near-surface momentum field, as well as scalar-flux measurements in the immediate vicinity of the surface.

  1. Relative measurement of the fluxes of thermal, resonant and rapid neutrons in reactor G1; Mesures relatives des flux thermique, resonnant et rapide dans le reacteur G1

    Energy Technology Data Exchange (ETDEWEB)

    Carle, R.; Mazancourt, T. de [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-07-01

    We sought to determine the behavior of the thermal, resonant and rapid neutron fluxes in the multiplier-reflector transition region, in the two principal directions of the system. We have also measured the variation of these different fluxes in the body of the multiplier medium in a canal filled with graphite and in an empty canal. The results are given in the form of curves representing: - the variation of the ratio of the thermal flux to the rapid flux in axial and radial transitions - the behavior of the thermal and resonant fluxes and the variation of their ratio in the same regions. (author) [French] Nous avons cherche a determiner le comportement des differents flux, thermique, resonnant et rapide a la transition milieu multiplicateur-reflecteur dans les deux directions principales du reseau. Nous avons egalement mesure la variation de ces differents flux au sein du milieu multiplicateur dans un canal rempli de graphite et dans un canal vide. Les resultats sont donnes sous forme de courbe representant: - La variation du rapport du flux thermique au flux rapide aux transitions axiale et radiale - L'allure des flux thermique et resonnant et la variation de leur rapport dans les memes regions. (auteur)

  2. Relative measurement of the fluxes of thermal, resonant and rapid neutrons in reactor G1; Mesures relatives des flux thermique, resonnant et rapide dans le reacteur G1

    Energy Technology Data Exchange (ETDEWEB)

    Carle, R; Mazancourt, T de [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1957-07-01

    We sought to determine the behavior of the thermal, resonant and rapid neutron fluxes in the multiplier-reflector transition region, in the two principal directions of the system. We have also measured the variation of these different fluxes in the body of the multiplier medium in a canal filled with graphite and in an empty canal. The results are given in the form of curves representing: - the variation of the ratio of the thermal flux to the rapid flux in axial and radial transitions - the behavior of the thermal and resonant fluxes and the variation of their ratio in the same regions. (author) [French] Nous avons cherche a determiner le comportement des differents flux, thermique, resonnant et rapide a la transition milieu multiplicateur-reflecteur dans les deux directions principales du reseau. Nous avons egalement mesure la variation de ces differents flux au sein du milieu multiplicateur dans un canal rempli de graphite et dans un canal vide. Les resultats sont donnes sous forme de courbe representant: - La variation du rapport du flux thermique au flux rapide aux transitions axiale et radiale - L'allure des flux thermique et resonnant et la variation de leur rapport dans les memes regions. (auteur)

  3. Structure and optical properties of Ge/Si quantum dots formed by driving the evolution of Ge thin films via thermal annealing

    Science.gov (United States)

    Shu, Qijiang; Yang, Jie; Chi, Qingbin; Sun, Tao; Wang, Chong; Yang, Yu

    2018-04-01

    Ge/Si quantum dots (QDs) are fabricated by driving the transformation of a Ge thin film-deposited using the direct current (DC) magnetron sputtering technique by controlling the subsequent in situ annealing processes. The experimental results indicate that, with the increase in annealing temperature, the volume of Ge QDs increases monotonically, while the QD density initially increases then decreases. The maximal QD density can reach 1.1 × 1011 cm‑2 after a 10 min annealing at 650 °C. The Ge–Ge peak of Ge QDs obtained by Raman spectroscopy initially undergoes a blue shift and then a red shift with increasing annealing temperature. This behavior results from the competition between the dislocation and the strain relaxation in QDs. Concurrently, a series of photoelectric detectors are fabricated to evaluate the photoelectric performance of these annealed Ge QD samples. A high-photoelectricity response is demonstrated in the QD sample annealed at 650 °C. Our results pave a promising way for whole-silicon-material optical-electronic integration based on a simple and practicable fabrication method.

  4. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  5. Lock-in thermography as a rapid and reproducible thermal characterization method for magnetic nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lemal, Philipp; Geers, Christoph; Monnier, Christophe A.; Crippa, Federica; Daum, Leopold; Urban, Dominic A.; Rothen-Rutishauser, Barbara [Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg (Switzerland); Bonmarin, Mathias, E-mail: mathias.bonmarin@zhaw.ch [Institute of Computational Physics, Zurich University of Applied Sciences, Technikumstrasse 9, 8400 Winterthur (Switzerland); Petri-Fink, Alke, E-mail: alke.fink@unifr.ch [Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg (Switzerland); Chemistry Department, University of Fribourg, Chemin du Museé 9, CH-1700 Fribourg (Switzerland); Moore, Thomas L., E-mail: thomaslee.moore@unifr.ch [Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg (Switzerland)

    2017-04-01

    Lock-in thermography (LIT) is a sensitive imaging technique generally used in engineering and materials science (e.g. detecting defects in composite materials). However, it has recently been expanded for investigating the heating power of nanomaterials, such as superparamagnetic iron oxide nanoparticles (SPIONs). Here we implement LIT as a rapid and reproducible method that can evaluate the heating potential of various sizes of SPIONs under an alternating magnetic field (AMF), as well as the limits of detection for each particle size. SPIONs were synthesized via thermal decomposition and stabilized in water via a ligand transfer process. Thermographic measurements of SPIONs were made by stimulating particles of varying sizes and increasing concentrations under an AMF. Furthermore, a commercially available SPION sample was included as an external reference. While the size dependent heating efficiency of SPIONs has been previously described, our objective was to probe the sensitivity limits of LIT. For certain size regimes it was possible to detect signals at concentrations as low as 0.1 mg Fe/mL. Measuring at different concentrations enabled a linear regression analysis and extrapolation of the limit of detection for different size nanoparticles. - Highlights: • A multi-sample screening assessment of magnetic nanoparticle thermal characteristics is shown via lock-in thermography. • Lower concentration limit of nanoparticle detection based on particle size is proposed. • A commercially available reference sample indicates the stability and reproducibility of LIT.

  6. A hybrid thermal video and FTIR spectrometer system for rapidly locating and characterizing gas leaks

    Science.gov (United States)

    Williams, David J.; Wadsworth, Winthrop; Salvaggio, Carl; Messinger, David W.

    2006-08-01

    Undiscovered gas leaks, known as fugitive emissions, in chemical plants and refinery operations can impact regional air quality and present a loss of product for industry. Surveying a facility for potential gas leaks can be a daunting task. Industrial leak detection and repair programs can be expensive to administer. An efficient, accurate and cost effective method for detecting and quantifying gas leaks would both save industries money by identifying production losses and improve regional air quality. Specialized thermal video systems have proven effective in rapidly locating gas leaks. These systems, however, do not have the spectral resolution for compound identification. Passive FTIR spectrometers can be used for gas compound identification, but using these systems for facility surveys is problematic due to their small field of view. A hybrid approach has been developed that utilizes the thermal video system to locate gas plumes using real time visualization of the leaks, coupled with the high spectral resolution FTIR spectrometer for compound identification and quantification. The prototype hybrid video/spectrometer system uses a sterling cooled thermal camera, operating in the MWIR (3-5 μm) with an additional notch filter set at around 3.4 μm, which allows for the visualization of gas compounds that absorb in this narrow spectral range, such as alkane hydrocarbons. This camera is positioned alongside of a portable, high speed passive FTIR spectrometer, which has a spectral range of 2 - 25 μm and operates at 4 cm -1 resolution. This system uses a 10 cm telescope foreoptic with an onboard blackbody for calibration. The two units are optically aligned using a turning mirror on the spectrometer's telescope with the video camera's output.

  7. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  8. Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

    1979-01-01

    This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

  9. Rapid thermal melted TiO2 nano-particles into ZnO nano-rod and its application for dye sensitized solar cells

    International Nuclear Information System (INIS)

    Chao, Ching-Hsun; Chang, Chi-Lung; Chan, Chien-Hung; Lien, Shui-Yang; Weng, Ko-Wei; Yao, Kuo-Shan

    2010-01-01

    TiO 2 nano-particles with an anchored ZnO nano-rod structure were synthesized using the hydrothermal method to grow ZnO nano-rods and coated TiO 2 nano-particles on ZnO nano-rods using the rapid thermal annealing method on ITO conducting glass pre-coated with nano porous TiO 2 film. The XRD study showed that there was little difference in crystal composition for various types of TiO 2 nano-particles anchored to ZnO nano-rods. The as-prepared architecture was characterized using field-emission scanning electron microscopy (FE-SEM). Films with TiO 2 nano-particles anchored to ZnO nano-rods were used as electrode materials to fabricate dye sensitized solar cells (DSSCs). The best solar energy conversion efficiency of 2.397% was obtained by modified electrode material, under AM 1.5 illumination, achieved up to J sc = 15.382 mA/cm 2 , V oc = 0.479 V and fill factor = 32.8%.

  10. Cascade annealing: an overview

    International Nuclear Information System (INIS)

    Doran, D.G.; Schiffgens, J.O.

    1976-04-01

    Concepts and an overview of radiation displacement damage modeling and annealing kinetics are presented. Short-term annealing methodology is described and results of annealing simulations performed on damage cascades generated using the Marlowe and Cascade programs are included. Observations concerning the inconsistencies and inadequacies of current methods are presented along with simulation of high energy cascades and simulation of longer-term annealing

  11. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    Science.gov (United States)

    Wang, Dong; Chen, Z. Q.; Wang, D. D.; Gong, J.; Cao, C. Y.; Tang, Z.; Huang, L. R.

    2010-11-01

    High purity Fe 2O 3/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2O 3/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2O 4. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2O 3/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.

  12. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    Energy Technology Data Exchange (ETDEWEB)

    Wang Dong [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Chen, Z.Q., E-mail: chenzq@whu.edu.c [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Wang, D.D.; Gong, J. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Cao, C.Y.; Tang, Z. [Department of Electronic and Engineering, East China Normal University, Shanghai 200241 (China); Huang, L.R. [Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2010-11-15

    High purity Fe{sub 2}O{sub 3}/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 {sup o}C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe{sub 2}O{sub 3}/ZnO nanocomposites were investigated by X-ray diffraction 2{theta} scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe{sub 2}O{sub 4}. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe{sub 2}O{sub 3}/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 {sup o}C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 {sup o}C, suggesting that it is not related with the interfacial defects.

  13. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    International Nuclear Information System (INIS)

    Wang Dong; Chen, Z.Q.; Wang, D.D.; Gong, J.; Cao, C.Y.; Tang, Z.; Huang, L.R.

    2010-01-01

    High purity Fe 2 O 3 /ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 o C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2 O 3 /ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2 O 4 . Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2 O 3 /ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 o C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 o C, suggesting that it is not related with the interfacial defects.

  14. Development of embrittlement prediction models for U.S. power reactors and the impact of the heat-affected zone to thermal annealing

    International Nuclear Information System (INIS)

    Wang, J.A.

    1998-05-01

    The NRC Regulatory Guide 1.99 Revision 2 was based on 177 surveillance data points and the EPRI data base, where 76%