Lattice parameters and Raman-active phonon modes of β-(Al{sub x}Ga{sub 1−x}){sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kranert, Christian, E-mail: christian.kranert@uni-leipzig.de; Jenderka, Marcus; Lenzner, Jörg; Lorenz, Michael; Wenckstern, Holger von; Schmidt-Grund, Rüdiger; Grundmann, Marius [Institut für Experimentelle Physik II, Universität Leipzig, Halbleiterphysik, Linnéstr. 5, 04103 Leipzig (Germany)

2015-03-28

We present X-ray diffraction and Raman spectroscopy investigations of a (100)-oriented (Al{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film on MgO (100) and bulk-like ceramics in dependence on their composition. The thin film grown by pulsed laser deposition has a continuous lateral composition spread allowing to determine precisely the dependence of the phonon mode properties and lattice parameters on the chemical composition. For x < 0.4, we observe the single-phase β-modification. Its lattice parameters and phonon energies depend linearly on the composition. We determined the slopes of these dependencies for the individual lattice parameters and for nine Raman lines, respectively. While the lattice parameters of the ceramics follow Vegard's rule, deviations are observed for the thin film. This deviation has only a small effect on the phonon energies, which show a reasonably good agreement between thin film and ceramics.

Phonon Raman spectra of colloidal CdTe nanocrystals: effect of size, non-stoichiometry and ligand exchange

Directory of Open Access Journals (Sweden)

Lokteva Irina

2011-01-01

Full Text Available Abstract Resonant Raman study reveals the noticeable effect of the ligand exchange on the nanocrystal (NC surface onto the phonon spectra of colloidal CdTe NC of different size and composition. The oleic acid ligand exchange for pyridine ones was found to change noticeably the position and width of the longitudinal optical (LO phonon mode, as well as its intensity ratio to overtones. The broad shoulder above the LO peak frequency was enhanced and sharpened after pyridine treatment, as well as with decreasing NC size. The low-frequency mode around 100 cm-1 which is commonly related with the disorder-activated acoustical phonons appears in smaller NCs but is not enhanced after pyridine treatment. Surprisingly, the feature at low-frequency shoulder of the LO peak, commonly assigned to the surface optical phonon mode, was not sensitive to ligand exchange and concomitant close packing of the NCs. An increased structural disorder on the NC surface, strain and modified electron-phonon coupling is discussed as the possible reason of the observed changes in the phonon spectrum of ligand-exchanged CdTe NCs. PACS: 63.20.-e, 78.30.-j, 78.67.-n, 78.67.Bf

Study of optical phonon modes of CdS nanoparticles using Raman

Indian Academy of Sciences (India)

In this paper we report the study of optical phonon modes of nanoparticles of CdS using Raman spectroscopy. Nanoparticle sample for the present study was synthesized through chemical precipitation technique. The CdS nanoparticles were then subjected to heat treatment at low temperature (150°C) for extended time ...

The electron–phonon coupling of fundamental, overtone, and combination modes and its effects on the resonance Raman spectra

Energy Technology Data Exchange (ETDEWEB)

Li, Shuo [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); College of Physics, Jilin University, Changchun 130012 (China); Li, Zhanlong; Wang, Shenghan; Gao, Shuqin [College of Physics, Jilin University, Changchun 130012 (China); Sun, Chenglin, E-mail: chenglin@jlu.edu.cn [State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China); College of Physics, Jilin University, Changchun 130012 (China); Li, Zuowei [College of Physics, Jilin University, Changchun 130012 (China)

2015-12-15

Highlights: • The Huang–Rhys factors and electron–phonon coupling constants are calculated. • The changes of overtone mode are larger than those of fundamental mode. • The variation pattern of electron–phonon coupling well interprets the changes of spectra. - Abstract: External field plays a very important role in the interaction between the π-electron transition and atomic vibration of polyenes. It has significant effects on both the Huang–Rhys factor and the electron–phonon coupling. In this paper, the visible absorption and resonance Raman spectra of all-trans-β-carotene are measured in the 345–295 K temperature range and it is found that the changes of the 0–1 and 0–2 vibration bands of the absorption spectra with the temperature lead to the different electron–phonon coupling of fundamental, overtone, and combination modes. The electron-phonon coupling constants of all the modes are calculated and analyzed under different temperatures. The variation law of the electron–phonon coupling with the temperature well interprets the changes of the resonance Raman spectra, such as the shift, intensity and line width of the overtone and combination modes, which are all greater than those of the fundamental modes.

Compositional behavior of Raman active phonons in Pb(Zr.sub.1-x./sub.Ti.sub.x./sub.).sub.3./sub. ceramics

Czech Academy of Sciences Publication Activity Database

Buixaderas, Elena; Gregora, Ivan; Savinov, Maxim; Hlinka, Jiří; Jin, L.; Damjanovic, D.; Malic, B.

2015-01-01

Roč. 91, č. 1 (2015), "014104-1"-"014104-8" ISSN 1098-0121 R&D Projects: GA ČR GA13-15110S Institutional support: RVO:68378271 Keywords : Raman spectroscopy * phonons * morphotropic phase bounday * PZT * ferroelectrics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES

OpenAIRE

Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.

1987-01-01

We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.

Raman spectra of SDW superconductors

Energy Technology Data Exchange (ETDEWEB)

Rout, G.C. [Condensed Matter Physics Group, Department of Physics, Government Science College, Chatrapur, Orissa 761 020 (India)]. E-mail: gcr@iopb.res.in; Bishoyi, K.C. [P.G. Department of Physics, F.M. College (Autonomous), Balasore, Orissa 756 001 (India); Behera, S.N. [Institute of Physics, Bhubaneswar 751 005 (India)

2005-03-15

We report the calculation of the phonon response of the coexistent spin density wave (SDW) and superconducting (SC) state and predict the observation of SC gap in the Raman spectra of rare-earth nickel borocarbide superconductors. The SDW state normally does not couple to the lattice and hence, the phonons in the system are not expected to be affected by the SDW state. But there is a possibility of observing SC gap mode in the Raman spectra of a SDW superconductor due to the coupling of the SC gap excitation to the Raman active phonons in the system via the electron-phonon (e-p) interaction. A theoretical model is used for the coexistent phase and electron-phonon interaction. Phonon Green's function is calculated by Zubarev's technique and the phonon self-energy due to e-p interaction which is given by electron density response function in the coexistent state corresponding to the SDW wave vector q = Q is evaluated. The results so obtained exhibit agreement with the experimental observations.

Raman spectra of SDW superconductors

International Nuclear Information System (INIS)

Rout, G.C.; Bishoyi, K.C.; Behera, S.N.

2005-01-01

We report the calculation of the phonon response of the coexistent spin density wave (SDW) and superconducting (SC) state and predict the observation of SC gap in the Raman spectra of rare-earth nickel borocarbide superconductors. The SDW state normally does not couple to the lattice and hence, the phonons in the system are not expected to be affected by the SDW state. But there is a possibility of observing SC gap mode in the Raman spectra of a SDW superconductor due to the coupling of the SC gap excitation to the Raman active phonons in the system via the electron-phonon (e-p) interaction. A theoretical model is used for the coexistent phase and electron-phonon interaction. Phonon Green's function is calculated by Zubarev's technique and the phonon self-energy due to e-p interaction which is given by electron density response function in the coexistent state corresponding to the SDW wave vector q = Q is evaluated. The results so obtained exhibit agreement with the experimental observations

Phonon Self-Energy Corrections to Nonzero Wave-Vector Phonon Modes in Single-Layer Graphene

Science.gov (United States)

Araujo, P. T.; Mafra, D. L.; Sato, K.; Saito, R.; Kong, J.; Dresselhaus, M. S.

2012-07-01

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q=0) wave vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene originating from a double-resonant Raman process with q≠0. The observed phonon renormalization effects are different from what is observed for the zone-center q=0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with nonzero wave vectors (q≠0) in single-layer graphene in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q=0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G⋆ Raman feature at 2450cm-1 to include the iTO+LA combination modes with q≠0 and also the 2iTO overtone modes with q=0, showing both to be associated with wave vectors near the high symmetry point K in the Brillouin zone.

Spin-phonon coupling in rod-shaped half-metallic CrO sub 2 ultrafine particles: a magnetic Raman scattering study

CERN Document Server

Yu, T; Sun, W X; Lin, J Y; Ding, J

2003-01-01

Half-metallic CrO sub 2 powder compact with rod-shaped nanoparticles was studied by micro-Raman scattering in the presence of an external magnetic field at room temperature (300 K). In the low-field region (H <= 250 mT), the frequency and intensity of the E sub g mode, an internal phonon mode of CrO sub 2 , increase dramatically with increase in the magnetic field, while the corresponding linewidth decreases. The above parameters become constant when the CrO sub 2 powder enters the saturation state at higher magnetic field. The pronounced anomalies of the Raman phonon parameters under a low magnetic field are attributed to the spin-phonon coupling enhanced by the magnetic ordering, which is induced by the external magnetic field. (letter to the editor)

Phonon self-energy corrections to non-zero wavevector phonon modes in single-layer graphene

Science.gov (United States)

Araujo, Paulo; Mafra, Daniela; Sato, Kentaro; Saito, Richiiro; Kong, Jing; Dresselhaus, Mildred

2012-02-01

Phonon self-energy corrections have mostly been studied theoretically and experimentally for phonon modes with zone-center (q = 0) wave-vectors. Here, gate-modulated Raman scattering is used to study phonons of a single layer of graphene (1LG) in the frequency range from 2350 to 2750 cm-1, which shows the G* and the G'-band features originating from a double-resonant Raman process with q 0. The observed phonon renormalization effects are different from what is observed for the zone-center q = 0 case. To explain our experimental findings, we explored the phonon self-energy for the phonons with non-zero wave-vectors (q 0) in 1LG in which the frequencies and decay widths are expected to behave oppositely to the behavior observed in the corresponding zone-center q = 0 processes. Within this framework, we resolve the identification of the phonon modes contributing to the G* Raman feature at 2450 cm-1 to include the iTO+LA combination modes with q 0 and the 2iTO overtone modes with q = 0, showing both to be associated with wave-vectors near the high symmetry point K in the Brillouin zone.

Normal state Raman spectra of high-Tc cuprates

International Nuclear Information System (INIS)

Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

2003-01-01

We present a microscopic theory to explain Raman spectra of high-T c cuprates R 2-x M x CuO 4 in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green function technique of Zubarev at zero wave vector and finite (room) temperature limit. Parameter dependence of Raman active phonon frequencies are studied by varying model parameters of the system i.e. the position of f-level (ε f ), the effective electron-phonon coupling strength (g), the staggered magnetic field (h 1 ), and the hybridization parameter (v). The four Raman active peaks (P 1 to P 4 ) represent the electronic states of the atomic sub-systems of the cuprate systems. They show up as phonon excitations due to the coupling of the phonon to the electrons and the anti-ferromagnetic gap. (author)

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

International Nuclear Information System (INIS)

Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

International Nuclear Information System (INIS)

Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

2010-01-01

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

Science.gov (United States)

Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

2010-08-06

In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

Raman Scattering Study of the Soft Phonon Mode in the Hexagonal Ferroelectric Crystal KNiCl 3

Science.gov (United States)

Machida, Ken-ichi; Kato, Tetsuya; Chao, Peng; Iio, Katsunori

1997-10-01

Raman spectra of some phonon modes of the hexagonal ferroelectriccrystal KNiCl3are obtained in the temperature range between 290 K and 590 K, which includes the structural phase transition point T2(=561 K) at which previous measurements of dielectric constant and spontaneouspolarization as a function of temperature had shown that KNiCl3 undergoes a transition between polar phases II and III. An optical birefringence measurement carried outas a complement to the present Raman scattering revealed that this transition is of second order. Towards this transition point, the totally symmetric phonon mode with the lowest frequency observed in the room-temperature phasewas found to soften with increasing temperature.The present results provide new information on the phase-transitionmechanism and the space groups of thehigher (II)- and lower (III)-symmetric phases around T2.

Resonant A1 phonon and four-magnon Raman scattering in hexagonal HoMnO3 thin film

International Nuclear Information System (INIS)

Chen Xiangbai; Thi Minh Hien, Nguyen; Yang, In-Sang; Lee, D; Jang, S-Y; Noh, T W

2010-01-01

We present the results of resonant Raman scattering of the A 1 phonon at 680 cm -1 and of the four-magnon at 760 cm -1 in hexagonal HoMnO 3 thin film. We find that the A 1 phonon at 680 cm -1 shows a strong resonance effect near the on-site Mn d-d transition at ∼1.7 eV. Our Raman results show that the four-magnon scattering can be selectively excited with red lasers of 647 nm (1.92 eV) and 671 nm (1.85 eV), but are not detectable with green lasers of 532 nm (2.33 eV), indicating that the four-magnon scattering in hexagonal HoMnO 3 has an extremely strong resonance effect also near the on-site Mn d-d transition at ∼1.7 eV. Furthermore, through the analyses of our study of the resonant four-magnon Raman scattering and earlier studies of the resonant two-magnon Raman scattering, we propose a simple general model for all resonant magnon scattering. Our simple general model predicts a simple method for the investigation of the spin-flipping/spin-wave in magnetic materials, which would have significant impacts on the applications of spintronic devices.

Nature of infrared-active phonon sidebands to internal vibrations: Spectroscopic studies of solid oxygen and nitrogen

Science.gov (United States)

Brodyanski, A. P.; Medvedev, S. A.; Vetter, M.; Kreutz, J.; Jodl, H. J.

2002-09-01

The ir-active phonon sidebands to internal vibrations of oxygen and nitrogen were precisely investigated by Fourier transform infrared spectroscopy in the fundamental and first overtone spectral regions from 10 K to the boiling points at ambient pressure. We showed that an analysis of ir-active phonon sidebands yields important information on the internal vibrations of molecules in a condensed medium (solid or liquid), being complementary to Raman data on vibron frequencies. Analyzing the complete profile of these bands, we determined the band origin frequencies and explored their temperature behavior in all phases of both substances. We present unambiguous direct experimental proofs that this quality corresponds to the frequency of internal vibrations of single molecules. Considering solid oxygen and nitrogen as two limiting cases for simple molecular solids, we interpret this result as a strong evidence for a general fact that an ir-active phonon sideband possesses the same physical origin in pure molecular solids and in impurity centers. The key characteristics of the fundamental vibron energy zone (environmental and resonance frequency shifts) were deduced from the combined analysis of ir and Raman experimental data and their temperature behavior was explored in solid and liquid phases of oxygen and nitrogen at ambient pressure. The character of the short-range orientational order was established in the β-nitrogen based on our theoretical analysis consistent with the present experimental results. We also present the explanation of the origin of pressure-caused changes in the frequency of the Raman vibron mode of solid oxygen at low temperatures.

Spin-phonon and magnetostriction phenomena in CaMn7O12 helimagnet probed by Raman spectroscopy

International Nuclear Information System (INIS)

Nonato, A.; Araujo, B. S.; Ayala, A. P.; Maciel, A. P.; Yanez-Vilar, S.; Sanchez-Andujar, M.; Senaris-Rodriguez, M. A.; Paschoal, C. W. A.

2014-01-01

In this letter, we investigated the temperature-dependent Raman spectra of CaMn 7 O 12 helimagnet from room temperature down to 10 K. The temperature dependence of the Raman mode parameters shows remarkable anomalies for both antiferromagnetic and incommensurate transitions that this compound undergoes at low temperatures. The anomalies observed at the magnetic ordering transition indicate a spin-phonon coupling at higher-temperature magnetic transition in this material, while a magnetostriction effect at the lower-temperature magnetic transition

Phonon spectra, electronic, and thermodynamic properties of WS2 nanotubes.

Science.gov (United States)

Evarestov, Robert A; Bandura, Andrei V; Porsev, Vitaly V; Kovalenko, Alexey V

2017-11-15

Hybrid density functional theory calculations are performed for the first time on the phonon dispersion and thermodynamic properties of WS 2 -based single-wall nanotubes. Symmetry analysis is presented for phonon modes in nanotubes using the standard (crystallographic) factorization for line groups. Symmetry and the number of infra-red and Raman active modes in achiral WS 2 nanotubes are given for armchair and zigzag chiralities. It is demonstrated that a number of infrared and Raman active modes is independent on the nanotube diameter. The zone-folding approach is applied to find out an impact of curvature on electron and phonon band structure of nanotubes rolled up from the monolayer. Phonon frequencies obtained both for layers and nanotubes are used to compute the thermal contributions to their thermodynamic functions. The temperature dependences of energy, entropy, and heat capacity of nanotubes are estimated with respect to those of the monolayer. The role of phonons in the stability estimation of nanotubes is discussed based on Helmholtz free energy calculations. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Raman spectra of filled carbon nanotubes

International Nuclear Information System (INIS)

Bose, S.M.; Behera, S.N.; Sarangi, S.N.; Entel, P.

2004-01-01

The Raman spectra of a metallic carbon nanotube filled with atoms or molecules have been investigated theoretically. It is found that there will be a three way splitting of the main Raman lines due to the interaction of the nanotube phonon with the collective excitations (plasmons) of the conduction electrons of the nanotube as well as its coupling with the phonon of the filling material. The positions and relative strengths of these Raman peaks depend on the strength of the electron-phonon interaction, phonon frequency of the filling atom and the strength of interaction of the nanotube phonon and the phonon of the filling atoms. Careful experimental studies of the Raman spectra of filled nanotubes should show these three peaks. It is also shown that in a semiconducting nanotube the Raman line will split into two and should be observed experimentally

Isotope effect on superconductivity and Raman phonons of Pyrochlore Cd2Re2O7

Science.gov (United States)

Razavi, F. S.; Hajialamdari, M.; Reedyk, M.; Kremer, R. K.

2018-06-01

Cd2Re2O7 is the only α-Pyrochlore exhibiting superconductivity with a transition temperature (Tc) of ∼ 1 K. In this study, we present the effect of oxygen isotope (18O) as well as combined 18O and cadmium isotope (116Cd) substitution on the superconductivity and Raman scattering spectrum of Cd2Re2O7. The change of Tc and the energy gap Δ(T) are reported using various techniques including point contact spectroscopy. The shift in Raman phonon frequencies upon isotope substitution will be compared with measurement of the isotope effect on the superconducting transition temperature.

Pressure-Raman study of resonant TO(Γ)-two-phonon decay processes in ZnS: Comparison of three isotope compositions

International Nuclear Information System (INIS)

Tallman, R.E.; Weinstein, B.A.; Serrano, J.; Lauck, R.; Cardona, M.; Cantarero, A.; Garro, N.; Ritter, T.M.

2004-01-01

Pressure-Raman studies (to 15 GPa, at 300 K and 16 K) are reported on 64 Zn 34 S, 68 Zn 32 S, and natural ZnS to compare the effects of resonant 3-phonon mixing on the TO(Γ) phonons for the different isotope compositions. Under pressure the TO(Γ) Raman profiles exhibit several distinct features, and a sharp Lorentzian TO(Γ) peak eventually emerges at a threshold pressure P Th that differs for each isotope composition. These effects are due to resonant mixing of the TO(Γ) phonon with TA+LA combination modes. Calculations based on a bond-charge model and perturbation theory reproduce the observed pressure variations in the shape and the width of the TO(Γ) peaks. It is shown that these changes relate to singularities in the TA+LA density of states. Mass scaling of the TO(Γ) and TA+LA modes explains the isotope effect on P Th , and leads to the estimate γ LA(W) ∝1.2. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The manifestation of spin-phonon coupling in CaMnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Goian, V., E-mail: goian@fzu.cz; Kamba, S.; Borodavka, F.; Nuzhnyy, D.; Savinov, M. [Institute of Physics, The Czech Academy of Sciences, Na Slovance 2, 182 21 Prague (Czech Republic); Belik, A. A. [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2015-04-28

Recently predicted presence of spin-phonon coupling in the CaMnO{sub 3} is experimentally confirmed in infrared (IR), Raman and time-domain THz spectra. Most of phonon frequencies seen below 350 cm{sup −1} exhibit significant shifts on cooling below antiferromagnetic phase transition at T{sub N} ≅ 120 K. Moreover, several new modes activate in the IR and Raman spectra on cooling below T{sub N}. Sum of phonon contributions to static permittivity exhibits small but reliable anomaly at T{sub N}. On the other hand, the spin-phonon coupling is not manifested in temperature dependence of radio-frequency permittivity, because intrinsic permittivity is screened by extrinsic contribution from conductivity, which enhances the permittivity to giant values.

Dominant phonon wave vectors and strain-induced splitting of the 2D Raman mode of graphene

Science.gov (United States)

Narula, Rohit; Bonini, Nicola; Marzari, Nicola; Reich, Stephanie

2012-03-01

The dominant phonon wave vectors q* probed by the 2D Raman mode of pristine and uniaxially strained graphene are determined via a combination of ab initio calculations and a full two-dimensional integration of the transition matrix. We show that q* are highly anisotropic and rotate about K with the polarizer and analyzer condition relative to the lattice. The corresponding phonon-mediated electronic transitions show a finite component along K-Γ that sensitively determines q*. We invalidate the notion of “inner” and “outer” processes. The characteristic splitting of the 2D mode of graphene under uniaxial tensile strain and given polarizer and analyzer setting is correctly predicted only if the strain-induced distortion and red-shift of the in-plane transverse optical (iTO) phonon dispersion as well as the changes in the electronic band structure are taken into account.

Raman tensor elements of β-Ga2O3.

Science.gov (United States)

Kranert, Christian; Sturm, Chris; Schmidt-Grund, Rüdiger; Grundmann, Marius

2016-11-03

The Raman spectrum and particularly the Raman scattering intensities of monoclinic β-Ga 2 O 3 are investigated by experiment and theory. The low symmetry of β-Ga 2 O 3 results in a complex dependence of the Raman intensity for the individual phonon modes on the scattering geometry which is additionally affected by birefringence. We measured the Raman spectra in dependence on the polarization direction for backscattering on three crystallographic planes of β-Ga 2 O 3 and modelled these dependencies using a modified Raman tensor formalism which takes birefringence into account. The spectral position of all 15 Raman active phonon modes and the Raman tensor elements of 13 modes were determined and are compared to results from ab-initio calculations.

Pressure-Raman study of resonant TO({gamma})-two-phonon decay processes in ZnS: Comparison of three isotope compositions

Energy Technology Data Exchange (ETDEWEB)

Tallman, R.E.; Weinstein, B.A. [Department of Physics, SUNY at Buffalo, NY 14260-1500 (United States); Serrano, J.; Lauck, R.; Cardona, M. [Max Plank Institut fuer Festkoerperforschung, 70569 Stutgart (Germany); Cantarero, A.; Garro, N. [Institut de Ciencia dels Materials, Universtitat de Valencia, E-46071 Valencia (Spain); Ritter, T.M. [Department of Chemistry and Physics,UNC Pembroke, North Carolina 28372 (United States)

2004-11-01

Pressure-Raman studies (to 15 GPa, at 300 K and 16 K) are reported on {sup 64}Zn{sup 34}S, {sup 68}Zn{sup 32}S, and natural ZnS to compare the effects of resonant 3-phonon mixing on the TO({gamma}) phonons for the different isotope compositions. Under pressure the TO({gamma}) Raman profiles exhibit several distinct features, and a sharp Lorentzian TO({gamma}) peak eventually emerges at a threshold pressure P{sub Th} that differs for each isotope composition. These effects are due to resonant mixing of the TO({gamma}) phonon with TA+LA combination modes. Calculations based on a bond-charge model and perturbation theory reproduce the observed pressure variations in the shape and the width of the TO({gamma}) peaks. It is shown that these changes relate to singularities in the TA+LA density of states. Mass scaling of the TO({gamma}) and TA+LA modes explains the isotope effect on P{sub Th}, and leads to the estimate {gamma}{sub LA(W)} {proportional_to}1.2. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Raman scattering study of filled skutterudite compounds

International Nuclear Information System (INIS)

Ogita, N; Kojima, R; Hasegawa, T; Takasu, Y; Udagawa, M; Kondo, T; Takeda, N; Ikeno, T; Ishikawa, K; Sugawara, H; Kikuchi, D; Sato, H; Sekine, C; Shirotani, I

2007-01-01

Raman scattering of skutterudite compounds RT 4 X 12 (R=La, Ce, Pr, Nd, Sm and Yb, T=Fe, Ru and Os, X=P and Sb) have been measured. All first-order Raman active phonons are observed and are assigned as the pnicogen vibrations. At the low energy region, the second-order phonons, due to the vibration of the rare earth ions with a flat phonon dispersion, are observed in the spectra of RRu 4 P 12 (R=La and Sm) and ROs 4 Sb 12 (R=La, Ce, Pr, Nd, and Sm). The appearance of the second-order phonons in the spectra is caused by an anharmonic vibrations of rare earth ions in large cage space and a large density of state due to the flat phonon dispersion. However, in spite of the similar cage space, the 2nd-order phonons are hardly observed for RFe 4 Sb 12 and RRu 4 Sb 12 . Thus, these results suggest that the dynamics of the rare earth ion is closely related to not only the cage size but also the electronic state due to the transition metals. Raman spectra of PrRu 4 P 12 show the drastic spectral change due to the metal-insulator transition. The phonon spectra and crystal field excitations due to the structural change have been assigned above and below the transition temperature

Interaction between confined phonons and photons in periodic silicon resonators

Science.gov (United States)

Iskandar, A.; Gwiazda, A.; Younes, J.; Kazan, M.; Bruyant, A.; Tabbal, M.; Lerondel, G.

2018-03-01

In this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases.

Hot phonon generation by split-off hole band electrons in AlxGa1-xAs alloys investigated by picosecond Raman scattering

International Nuclear Information System (INIS)

Jacob, J.M.; Kim, D.S.; Zhou, J.F.; Song, J.J.

1992-01-01

The initial generation of hot LO phonons by the relaxation of hot carriers in GaAs and Al x Ga 1-x As alloy semiconductors is studied. Within the initial 2ps of photoexcitation, only those electrons originating from the split-off hole bands are found to generate a significant number of I-valley hot phonons when photon energies of 2.33eV are used. A picosecond Raman scattering technique is used to determine the hot phonon occupation number in a series of MBE grown Al x Ga 1-x As samples with 0≤x≤0.39. The Stokes and anti-Stokes lines were measured for both GaAs-like and AlAs-like LO phonon modes to determine their occupation numbers. The authors observe a rapid decrease in the phonon occupation numbers as the aluminum concentration increases beyond x = 0.2. This rapid decrease is explained by considering only those electrons photoexcited from the split-off hole band. Almost all of the electrons originating from the heavy and light-hole bands are shown to quickly transfer and remain in the X and L valleys without generating significant numbers of hot LO phonons during the initial 2ps and at a carrier density of 10 17 cm -3 . A model based upon the instantaneous thermalization of hot electrons photoexcited from the split-off hole bands is used to fit the data. They have obtained very good agreement between experiment and theory. This work provides a clear understanding to the relaxation of Γ valley hot electrons by the generation of hot phonons on subpicosecond and picosecond time scales, which has long standing implications to previous time resolved Raman experiments

Strong spin-phonon coupling in infrared and Raman spectra of SrMnO.sub.3./sub..

Czech Academy of Sciences Publication Activity Database

Kamba, Stanislav; Goian, Veronica; Skoromets, Volodymyr; Hejtmánek, Jiří; Bovtun, Viktor; Kempa, Martin; Borodavka, Fedir; Vaněk, Přemysl; Belik, A.A.; Lee, J.H.; Pacherová, Oliva; Rabe, K.M.

2014-01-01

Roč. 89, č. 6 (2014), "064308-1"-"064308-9" ISSN 1098-0121 R&D Projects: GA MŠk LH13048; GA ČR GAP204/12/1163; GA MŠk LD12026; GA ČR GP14-14122P Institutional support: RVO:68378271 Keywords : multiferroics * spin-phonon coupling * infrared and Raman spectra Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

The anharmonic phonon decay rate in group-III nitrides

International Nuclear Information System (INIS)

Srivastava, G P

2009-01-01

Measured lifetimes of hot phonons in group-III nitrides have been explained theoretically by considering three-phonon anharmonic interaction processes. The basic ingredients of the theory include full phonon dispersion relations obtained from the application of an adiabatic bond charge model and crystal anharmonic potential within the isotropic elastic continuum model. The role of various decay routes, such as Klemens, Ridley, Vallee-Bogani and Barman-Srivastava channels, in determining the lifetimes of the Raman active zone-centre longitudinal optical (LO) modes in BN (zincblende structure) and A 1 (LO) modes in AlN, GaN and InN (wurtzite structure) has been quantified.

Raman-active phonons in Bi2Sr2Ca1-xYxCu2O8+d (x=0-1): Effects of hole filling and internal pressure induced by Y doping for Ca, and implications for phonon assignments

DEFF Research Database (Denmark)

Kakihana, M.; Osada, M.; Käll, M.

1996-01-01

The phonon Raman spectra of Bi2Sr2Ca1-xYxCu2O8+d (x=0-1) have been investigated in a number of well-defined single-crystal and polycrystalline samples. From the polarization and Y-doping dependence, and from a comparison with previous reports on Bi-based cuprates, we identify the (6A(1g)+1B(1g...

Phonon and magnon scattering of Bi{sub 2}Fe{sub 4}O{sub 9} ceramic

Energy Technology Data Exchange (ETDEWEB)

Sharma, Poorva, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com; Kumar, Ashwini, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com; Varshney, Dinesh, E-mail: vdinesh33@rediffmail.com, E-mail: vdinesh33@rediffmail.com [School of Physics, Vigyan Bhawan, Devi Ahilya University, Khandwa Road Campus, Indore-452001 (India)

2014-04-24

We report the phonon structure of Bi{sub 2}Fe{sub 4}O{sub 9} ceramics as synthesized by solid-state reaction route. Rietveld refined X-ray diffraction patterns confirmed the formation of single-phase perovskite structure and all the peaks of Bi{sub 2}Fe{sub 4}O{sub 9} perfectly indexed to the orthorhombic (space group Pbam). Raman scattering measurements identifies 12A{sub g}+1B{sub 2g}+1B{sub 3g} Raman active optical phonon modes. Apart from phonon scattering, mode at 470 cm{sup −1} is observed which is due to magnon scattering. The P-E loop infers paraelectric nature of Bi{sub 2}Fe{sub 4}O{sub 9}.

Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

International Nuclear Information System (INIS)

Tan, P.H.; Bougeard, D.; Abstreiter, G.; Brunner, K.

2005-01-01

We characterized strain and Ge content depending on depth in a self-assembled Si/Ge dot multilayer by scanning a microscopic Raman probe at a (110) cleavage plane. The multilayer structure was deposited by molecular-beam epitaxy on a (001) Si substrate and consisted of 80 periods, each of them composed by 25 nm Si spacers and 8 monolayer Ge forming laterally and vertically uncorrelated islands with a height of 2 nm and a lateral diameter of about 20 nm. An average biaxial strain of -3.5% within the core regions of islands is determined from the splitting of longitudinal and transversal optical Ge-Ge phonon modes observed in polarized Raman measurements. The absolute mode frequencies further enable analysis of a Ge content of 0.82. The analyzed strain and composition of islands are nearly independent from depths below the sample surface. This indicates well-controlled deposition parameters and negligible intermixing during deposition of subsequent layers. These Raman results are in agreement with x-ray diffraction data. Small, local Raman frequency shifts were observed and discussed with respect to partial elastic strain relaxation of the multilayer stack after cleavage, undefined Raman-scattering geometries at the sample edge, and local heating by the laser probe

The studies of surface properties of 1.5 MeV Si-implanted silicon by multiphonon Raman spectrum

International Nuclear Information System (INIS)

Huang, X.

1995-01-01

The surface layer of crystalline silicon implanted by 1.5 MeV Si ions with doses ranging from 1 x 10 11 to 1 x 10 15 Si + cm -2 has been studied by two-phonon Raman spectra in both the acoustical overtone region and optical overtone region. Two-phonon Raman line intensities and shifts have been used to investigate the properties in the skin layer. The experimental two-phonon Raman spectra showed a decrease in intensity for both optical and acoustical two-phonon Raman peaks and also showed shifts by different amounts in different directions depending on the particular phonons. The stress values obtained by two-phonon Raman line shifts are compared with those obtained previously by one-phonon Raman shifts. The comparison shows that the surface defects make no contribution to two-phonon Raman line shifts. The two-phonon Raman line shifts show that the surface stress increases as a function of implantation doses. (author)

Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

Directory of Open Access Journals (Sweden)

Hao Xu

2015-08-01

Full Text Available Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

Resonant surface-enhanced Raman scattering by optical phonons in a monolayer of CdSe nanocrystals on Au nanocluster arrays

Energy Technology Data Exchange (ETDEWEB)

Milekhin, Alexander G., E-mail: milekhin@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics, pr. Lavrentjeva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogov str. 2, 630090 Novosibirsk (Russian Federation); Sveshnikova, Larisa L.; Duda, Tatyana A. [A.V. Rzhanov Institute of Semiconductor Physics, pr. Lavrentjeva, 13, 630090 Novosibirsk (Russian Federation); Rodyakina, Ekaterina E. [A.V. Rzhanov Institute of Semiconductor Physics, pr. Lavrentjeva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogov str. 2, 630090 Novosibirsk (Russian Federation); Dzhagan, Volodymyr M. [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Sheremet, Evgeniya [Solid Surfaces Analysis, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Gordan, Ovidiu D. [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Himcinschi, Cameliu [Institut für Theoretische Physik, TU Bergakademie Freiberg, 09596 Freiberg (Germany); Latyshev, Alexander V. [A.V. Rzhanov Institute of Semiconductor Physics, pr. Lavrentjeva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogov str. 2, 630090 Novosibirsk (Russian Federation); Zahn, Dietrich R.T. [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany)

2016-05-01

Highlights: • Regular Au nanocluster and dimer arrays as well as single Au dimers are fabricated. • Resonant SERS by monolayers of CdSe nanocrystals deposited on the Au nanostructures is observed. • LO energy change for CdSe NCs on different single Au dimers indicates SERS by single or a few NCs. - Abstract: Here we present the results on an investigation of resonant Stokes and anti- Stokes surface-enhanced Raman scattering (SERS) by optical phonons in colloidal CdSe nanocrystals (NCs) homogeneously deposited on arrays of Au nanoclusters using the Langmuir–Blodgett technology. The thickness of deposited NCs, determined by transmission and scanning electron microscopy, amounts to approximately 1 monolayer. Special attention is paid to the determination of the localized surface plasmon resonance (LSPR) energy in the arrays of Au nanoclusters as a function of the nanocluster size by means of micro-ellipsometry. SERS by optical phonons in CdSe NCs shows a significant enhancement factor with a maximal value of 2 × 10{sup 3} which depends resonantly on the Au nanocluster size and thus on the LSPR energy. The deposition of CdSe NCs on the arrays of Au nanocluster dimers enabled us to study the polarization dependence of SERS. It was found that a maximal SERS signal is observed for the light polarization along the dimer axis. Finally, SERS by optical phonons was observed for CdSe NCs deposited on the structures with a single Au dimer. A difference of the LO phonon energy is observed for CdSe NCs on different single dimers. This effect is explained as the confinement-induced shift which depends on the CdSe nanocrystal size and indicates quasi-single NC Raman spectra being obtained.

Blue- and red-shifts of V2O5 phonons in NH3 environment by in situ Raman spectroscopy

Science.gov (United States)

Adeleke Akande, Amos; Machatine, Augusto Goncalo Jose; Masina, Bathusile; Chimowa, George; Matsoso, Boitumelo; Roro, Kittessa; Duvenhage, Mart-Mari; Swart, Hendrik; Bandyopadhyay, Jayita; Sinha Ray, Suprakas; Wakufwa Mwakikunga, Bonex

2018-01-01

A layer of ~30 nm V2O5/100 nm-SiO2 on Si was employed in the in situ Raman spectroscopy in the presence of NH3 effluent from a thermal decomposition of ammonium acetate salt with the salt heated at 100 °C. When the layer is placed at 25 °C, we observe a reversible red-shift of 194 cm-1 V2O5 phonon by 2 cm-1 upon NH3 gas injection to saturation, as well as a reversible blue-shift of the 996 cm-1 by 4 cm-1 upon NH3 injection. However when the sensing layer is placed at 100 °C, the 194 cm-1 remains un-shifted while the 996 cm-1 phonon is red-shifted. There is a decrease/increase in intensity of the 145 cm-1 phonon at 25 °C/100 °C when NH3 interacts with V2O5 surface. Using the traditional and quantitative gas sensor tester system, we find that the V2O5 sensor at 25 °C responds faster than at 100 °C up to 20 ppm of NH3 beyond which it responds faster at 100 °C than at 25 °C. Overall rankings of the NH3 gas sensing features between the two techniques showed that the in situ Raman spectroscopy is faster in response compared with the traditional chemi-resistive tester. Hooke’s law, phonon confinement in ~51 nm globular particles with ~20 nm pore size and physisorption/chemisorption principles have been employed in the explanation of the data presented.

Pressure dependence of the Raman spectrum, lattice parameters and superconducting critical temperature of MgB2: evidence for pressure-driven phonon-assisted electronic topological transition

International Nuclear Information System (INIS)

Goncharov, A.F.; Struzhkin, V.V.

2003-01-01

We overview recent high-pressure studies of high-temperature superconductor MgB 2 by Raman scattering technique combined with measurements of superconducting critical temperature T c and lattice parameters up to 57 GPa. An anomalously broadened Raman band at 620 cm -1 is observed and assigned to the in-plane boron stretching E 2g mode. It exhibits a large Grueneisen parameter indicating that the vibration is highly anharmonic. The pressure dependencies of the E 2g mode and T c reveal anomalies at 15-22 GPa (isotope dependent). The anharmonic character of the E 2g phonon mode, its anomalous pressure dependence, and also that for T c are interpreted as a result of a phonon-assisted Lifshitz electronic topological transition

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

International Nuclear Information System (INIS)

Kuriyama, K.; Sakai, K.; Okada, M.

1996-01-01

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

Raman spectroscopy in graphene

International Nuclear Information System (INIS)

Malard, L.M.; Pimenta, M.A.; Dresselhaus, G.; Dresselhaus, M.S.

2009-01-01

Recent Raman scattering studies in different types of graphene samples are reviewed here. We first discuss the first-order and the double resonance Raman scattering mechanisms in graphene, which give rise to the most prominent Raman features. The determination of the number of layers in few-layer graphene is discussed, giving special emphasis to the possibility of using Raman spectroscopy to distinguish a monolayer from few-layer graphene stacked in the Bernal (AB) configuration. Different types of graphene samples produced both by exfoliation and using epitaxial methods are described and their Raman spectra are compared with those of 3D crystalline graphite and turbostratic graphite, in which the layers are stacked with rotational disorder. We show that Resonance Raman studies, where the energy of the excitation laser line can be tuned continuously, can be used to probe electrons and phonons near the Dirac point of graphene and, in particular allowing a determination to be made of the tight-binding parameters for bilayer graphene. The special process of electron-phonon interaction that renormalizes the phonon energy giving rise to the Kohn anomaly is discussed, and is illustrated by gated experiments where the position of the Fermi level can be changed experimentally. Finally, we discuss the ability of distinguishing armchair and zig-zag edges by Raman spectroscopy and studies in graphene nanoribbons in which the Raman signal is enhanced due to resonance with singularities in the density of electronic states.

Light-induced nonthermal population of optical phonons in nanocrystals

Science.gov (United States)

Falcão, Bruno P.; Leitão, Joaquim P.; Correia, Maria R.; Soares, Maria R.; Wiggers, Hartmut; Cantarero, Andrés; Pereira, Rui N.

2017-03-01

Raman spectroscopy is widely used to study bulk and nanomaterials, where information is frequently obtained from spectral line positions and intensities. In this study, we monitored the Raman spectrum of ensembles of semiconductor nanocrystals (NCs) as a function of optical excitation intensity (optical excitation experiments). We observe that in NCs the red-shift of the Raman peak position with increasing light power density is much steeper than that recorded for the corresponding bulk material. The increase in optical excitation intensity results also in an increasingly higher temperature of the NCs as obtained with Raman thermometry through the commonly used Stokes/anti-Stokes intensity ratio. More significantly, the obtained dependence of the Raman peak position on temperature in optical excitation experiments is markedly different from that observed when the same NCs are excited only thermally (thermal excitation experiments). This difference is not observed for the control bulk material. The inefficient diffusion of photogenerated charges in nanoparticulate systems, due to their inherently low electrical conductivity, results in a higher steady-state density of photoexcited charges and, consequently, also in a stronger excitation of optical phonons that cannot decay quickly enough into acoustic phonons. This results in a nonthermal population of optical phonons and thus the Raman spectrum deviates from that expected for the temperature of the system. Our study has major consequences to the general application of Raman spectroscopy to nanomaterials.

Hot-phonon generation in THz quantum cascade lasers

Science.gov (United States)

Spagnolo, V.; Vitiello, M. S.; Scamarcio, G.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L.

2007-12-01

Observation of non-equilibrium optical phonons population associated with electron transport in THz quantum cascade lasers is reported. The phonon occupation number was measured by using a combination of micro-probe photoluminescence and Stokes/Anti-Stokes Raman spectroscopy. Energy balance analysis allows us to estimate the phonon relaxation rate, that superlinearly increases with the electrical power in the range 1.5 W - 1.95 W, above laser threshold. This observation suggests the occurrence of stimulated emission of optical phonons.

Effects of the electron-phonon coupling activation in collision cascades

Energy Technology Data Exchange (ETDEWEB)

Zarkadoula, Eva, E-mail: zarkadoulae@ornl.gov [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Samolyuk, German [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Weber, William J. [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996 (United States)

2017-07-15

Using the two-temperature (2T-MD) model in molecular dynamics simulations, we investigate the condition of switching the electronic stopping term off when the electron-phonon coupling is activated in the damage production due to 50 keV Ni ion cascades in Ni and equiatomic NiFe. Additionally, we investigate the effect of the electron-phonon coupling activation time in the damage production. We find that the switching condition has negligible effect in the produced damage, while the choice of the activation time of the electron-phonon coupling can affect the amount of surviving damage. - Highlights: •The electron-phonon interactions in irradiation affect the energy dissipation. •The resulting damage depends on the electron-phonon interaction activation time. •The electronic stopping acts on the ions before the electron-phonon interactions.

Polarization dependent behavior of CdS around the first and second LO-phonon modes

International Nuclear Information System (INIS)

Frausto-Reyes, C.; Molina-Contreras, J.R.; Lopez-Alvarez, Y.F.; Medel-Ruiz, C.I.; Perez Ladron de Guevara, H.; Ortiz-Morales, M.

2010-01-01

The present work report studies on resonant Raman experimental line shape for CdS around the first and second LO-phonon modes. The application of our method to the study of LO-phonon modes of CdS suggests that the scattered intensity is dominated by the surface and dependent on polarization. Results showed that the Raman spectra for CdS, roughly fall into three groups: a broad line-wing with apparent maxima around 194 cm -1 in the range of 140 and 240 cm -1 which can be ascribed to overtone scattering from acoustic phonons; a band near the 1LO phonon mode which can be attributed to a combination of one-phonon scattering and peak acoustic phonon and finally, a band near the 2LO phonon mode which can be attributed to a combination of two-phonon scattering and peak acoustic phonon.

Resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Kelley, Anne Myers, E-mail: amkelley@ucmerced.edu [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States); Dai, Quanqin; Jiang, Zhong-jie; Baker, Joshua A.; Kelley, David F. [Chemistry and Chemical Biology, School of Natural Sciences, University of California, 5200 North Lake Road, Merced, CA 95343 (United States)

2013-08-30

Highlights: ► Very similar resonance Raman spectra of wurtzite and zincblende CdSe nanocrystals. ► First absolute resonance Raman cross-sections reported for CdSe nanocrystals. ► LO overtones suggest slightly stronger electron–phonon coupling in wurtzite form. - Abstract: Resonance Raman spectra and absolute differential Raman cross-sections have been measured for CdSe nanocrystals in both the wurtzite and zincblende crystal forms at four excitation wavelengths from 457.9 to 514.5 nm. The frequency and bandshape of the longitudinal optical (LO) phonon fundamental is essentially identical for both crystal forms at each excitation wavelength. The LO phonon overtone to fundamental intensity ratio appears to be slightly higher for the wurtzite form, which may suggest slightly stronger exciton–phonon coupling from the Fröhlich mechanism in the wurtzite form. The LO fundamental Raman cross-sections are very similar for both crystal forms at each excitation wavelength.

Microscopic theoretical study of Raman spectra in charge and spin ordered cuprate systems

International Nuclear Information System (INIS)

Raj, B.K.; Panda, S.K.; Rout, G.C.

2013-01-01

Highlights: • The model calculation treats CDW interaction as pseudogap for cuprates. • The interplay of Raman active CDW-SDW mixed modes are investigated. • Independent CDW and SDW gap values can be determined from experimental data. -- Abstract: Raman scattering is one of the most powerful methods to investigate the electron as well as the phonon excitations in the systems. In this communication, we present a theoretical study of Raman scattering in the normal state of the high-T C systems in the under-doped region displaying the interplay of the spin-density-wave (SDW) and charge-density-wave (CDW) interactions. The SDW order arises from the repulsive Coulomb interaction of electrons, while the CDW order arises due to strong electron–phonon interaction giving rise to Fermi surface instability. We calculate phonon response function in order to examine the possibility of observing the SDW excitation mode in presence of the CDW interaction present in the same conduction band. The Raman scattering intensity is calculated from the imaginary part of the phonon Green’s function assigning an arbitrary spectral width. The spectral density function displays two mixed modes of excitation peaks at energies 2(Δ c ± Δ s ). The evolution of excitation peaks are investigated by varying CDW coupling, SDW coupling and the phonon momentum transfer energy

Microscopic theoretical study of Raman spectra in charge and spin ordered cuprate systems

Energy Technology Data Exchange (ETDEWEB)

Raj, B. K. [Dept. of Physics, Govt. Autonomous College, Angul, Orissa (India); Panda, S. K. [KD Science College, Pochilima, Hinjilicut, 761 101 Ganjam, Orissa (India); Rout, G.C., E-mail: gcr@iopb.res.in [Condensed Matter Physics Group, PG Dept. of Applied Physics and Ballistics, FM University, Balasore 756 019 (India)

2013-09-15

Highlights: • The model calculation treats CDW interaction as pseudogap for cuprates. • The interplay of Raman active CDW-SDW mixed modes are investigated. • Independent CDW and SDW gap values can be determined from experimental data. -- Abstract: Raman scattering is one of the most powerful methods to investigate the electron as well as the phonon excitations in the systems. In this communication, we present a theoretical study of Raman scattering in the normal state of the high-T{sub C} systems in the under-doped region displaying the interplay of the spin-density-wave (SDW) and charge-density-wave (CDW) interactions. The SDW order arises from the repulsive Coulomb interaction of electrons, while the CDW order arises due to strong electron–phonon interaction giving rise to Fermi surface instability. We calculate phonon response function in order to examine the possibility of observing the SDW excitation mode in presence of the CDW interaction present in the same conduction band. The Raman scattering intensity is calculated from the imaginary part of the phonon Green’s function assigning an arbitrary spectral width. The spectral density function displays two mixed modes of excitation peaks at energies 2(Δ{sub c} ± Δ{sub s}). The evolution of excitation peaks are investigated by varying CDW coupling, SDW coupling and the phonon momentum transfer energy.

Local symmetry breaking and spin–phonon coupling in SmCrO3 orthochromite

International Nuclear Information System (INIS)

El Amrani, M.; Zaghrioui, M.; Ta Phuoc, V.; Gervais, F.; Massa, Néstor E.

2014-01-01

Raman scattering and infrared reflectivity performed on polycrystalline SmCrO 3 support strong influence of the antiferromagnetic order on phonon modes. Both measurements show softening of some modes below T N . Such a behavior is explained by spin–phonon coupling in this compound. Furthermore, temperature dependence of the infrared spectra has demonstrated important changes compared to the Raman spectra, suggesting strong structural modifications due to the cation displacements rather to those of the oxygen ions. Our results reveal that polar distortions originating in local symmetry breaking, i.e. local non-centrosymmetry, resulting in Cr off-centring. - Highlights: • We investigated Raman and infrared phonon modes of SmCrO 3 versus temperature. • Results reveal strong influence of the antiferromagnetic order on phonon modes. • Temperature dependence of the infrared spectra shows strong structural modifications suggesting local symmetry breaking

Vibrational properties of epitaxial Bi{sub 4}Te{sub 3} films as studied by Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Xu, Hao; Pan, Wenwu; Chen, Qimiao; Wu, Xiaoyan [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049 (China); Song, Yuxin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se; Gong, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Lu, Pengfei [State Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, P.O. Box 72, Beijing 100876 (China); Wang, Shumin, E-mail: songyuxin@mail.sim.ac.cn, E-mail: shumin@chalmers.se [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China); Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg (Sweden)

2015-08-15

Bi{sub 4}Te{sub 3}, as one of the phases of the binary Bi–Te system, shares many similarities with Bi{sub 2}Te{sub 3}, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi{sub 4}Te{sub 3} films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi{sub 4}Te{sub 3} films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi{sub 4}Te{sub 3} films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi{sub 4}Te{sub 3} films, it is found that the Raman-active phonon oscillations in Bi{sub 4}Te{sub 3} films exhibit the vibrational properties of those in both Bi and Bi{sub 2}Te{sub 3} films.

Squeezed Phonons: Modulating Quantum Fluctuations of Atomic Displacements.

Science.gov (United States)

Hu, Xuedong; Nori, Franco

1997-03-01

We have studied phonon squeezed states and also put forward several proposals for their generation(On phonon parametric process, X. Hu and F. Nori, Phys. Rev. Lett. 76), 2294 (1996); on polariton mechanism, X. Hu and F. Nori, Phys. Rev. B 53, 2419 (1996); on second-order Raman scattering, X. Hu and F. Nori, preprint.. Here, we compare the relative merits and limitations of these approaches, including several factors that will limit the amount of phonon squeezing. In particular, we investigate the effect of the initial thermal states on the phonon modes. Using a model for the phonon density matrix, we also study the mixing of the phonon squeezed states with thermal states, which describes the decay of the phonon coherence. Finally, we calculate the maximum possible squeezing from a phonon parametric process limited by phonon decay.

Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction

OpenAIRE

Assili, Mohamed; Haddad, Sonia

2014-01-01

We derive the frequency shifts and the broadening of $\\Gamma$ point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron density and the disorder amount. We show that, in the absence of a shear strain component, such interaction gives rise to a lifting of the degeneracy of the LO and TO modes which contributes to the splitting of the G Raman band. The anisotropy of the electronic...

Long-wavelength optical phonon behavior in uniaxial strained graphene: Role of electron-phonon interaction

Science.gov (United States)

Assili, M.; Haddad, S.

2014-09-01

We derive the frequency shifts and the broadening of Γ-point longitudinal optical (LO) and transverse optical (TO) phonon modes, due to electron-phonon interaction, in graphene under uniaxial strain as a function of the electron density and the disorder amount. We show that, in the absence of a shear strain component, such interaction gives rise to a lifting of the degeneracy of the LO and TO modes which contributes to the splitting of the G Raman band. The anisotropy of the electronic spectrum, induced by the strain, results in a polarization dependence of the LO and TO modes. This dependence is in agreement with the experimental results showing a periodic modulation of the Raman intensity of the split G peak. Moreover, the anomalous behavior of the frequency shift reported in undeformed graphene is found to be robust under strain.

Local symmetry breaking and spin–phonon coupling in SmCrO{sub 3} orthochromite

Energy Technology Data Exchange (ETDEWEB)

El Amrani, M. [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Zaghrioui, M., E-mail: zaghrioui@univ-tours.fr [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Ta Phuoc, V.; Gervais, F. [GREMAN CNRS UMR 7347, Université F. Rabelais, IUT de Blois, 15 rue de la Chocolatrie 41029 Blois cedex (France); Massa, Néstor E. [Laboratorio Nacional de Investigacion y Servicios en Espectroscopia Optica-Centro CEQUINOR, Universidad Nacional de La Plata, C. C. 962, 1900 La Plata (Argentina)

2014-06-01

Raman scattering and infrared reflectivity performed on polycrystalline SmCrO{sub 3} support strong influence of the antiferromagnetic order on phonon modes. Both measurements show softening of some modes below T{sub N}. Such a behavior is explained by spin–phonon coupling in this compound. Furthermore, temperature dependence of the infrared spectra has demonstrated important changes compared to the Raman spectra, suggesting strong structural modifications due to the cation displacements rather to those of the oxygen ions. Our results reveal that polar distortions originating in local symmetry breaking, i.e. local non-centrosymmetry, resulting in Cr off-centring. - Highlights: • We investigated Raman and infrared phonon modes of SmCrO{sub 3} versus temperature. • Results reveal strong influence of the antiferromagnetic order on phonon modes. • Temperature dependence of the infrared spectra shows strong structural modifications suggesting local symmetry breaking.

Intricate Resonant Raman Response in Anisotropic ReS2.

Science.gov (United States)

McCreary, Amber; Simpson, Jeffrey R; Wang, Yuanxi; Rhodes, Daniel; Fujisawa, Kazunori; Balicas, Luis; Dubey, Madan; Crespi, Vincent H; Terrones, Mauricio; Hight Walker, Angela R

2017-10-11

The strong in-plane anisotropy of rhenium disulfide (ReS 2 ) offers an additional physical parameter that can be tuned for advanced applications such as logic circuits, thin-film polarizers, and polarization-sensitive photodetectors. ReS 2 also presents advantages for optoelectronics, as it is both a direct-gap semiconductor for few-layer thicknesses (unlike MoS 2 or WS 2 ) and stable in air (unlike black phosphorus). Raman spectroscopy is one of the most powerful characterization techniques to nondestructively and sensitively probe the fundamental photophysics of a 2D material. Here, we perform a thorough study of the resonant Raman response of the 18 first-order phonons in ReS 2 at various layer thicknesses and crystal orientations. Remarkably, we discover that, as opposed to a general increase in intensity of all of the Raman modes at excitonic transitions, each of the 18 modes behave differently relative to each other as a function of laser excitation, layer thickness, and orientation in a manner that highlights the importance of electron-phonon coupling in ReS 2 . In addition, we correct an unrecognized error in the calculation of the optical interference enhancement of the Raman signal of transition metal dichalcogenides on SiO 2 /Si substrates that has propagated through various reports. For ReS 2 , this correction is critical to properly assessing the resonant Raman behavior. We also implemented a perturbation approach to calculate frequency-dependent Raman intensities based on first-principles and demonstrate that, despite the neglect of excitonic effects, useful trends in the Raman intensities of monolayer and bulk ReS 2 at different laser energies can be accurately captured. Finally, the phonon dispersion calculated from first-principles is used to address the possible origins of unexplained peaks observed in the Raman spectra, such as infrared-active modes, defects, and second-order processes.

Renormalisation of Nonequilibrium Phonons Under Strong Perturbative Influences.

Science.gov (United States)

Mehta, Sushrut Madhukar

Effects of strong perturbative influences, namely the presence of a narrow distribution of acoustic phonons, and the presence of an electron plasma, on the dynamics of nonequilibrium, near zone center, longitudinal optical phonons in GaP have been investigated in two separate experiments. The study of the effects of the interaction between the LO phonons and a heavily populated, narrow distribution of acoustic phonons lead to the observation of a new optically driven nonequilibrium phonon state. Time Resolved Coherent Antistokes Raman Scattering (TR-CARS), with picosecond resolution, was used to investigate the new mode. In order to achieve high occupation numbers in the acoustic branch, the picosecond laser pulses used were amplified up to 1.0 GW/cm^2 peak power per laser beam. An important characteristic property of the new state which differentiates it from the well known LO phonon state is the fact that rather than having the single decay rate observed under thermal equilibrium, the new state has two decay rates. Moreover, these two decay rates depend strongly on the distribution of the acoustic phonon occupation number. The coupling of the LO phonons with an electron plasma, on the other hand, was investigated by measurements of the shape of the Raman scattered line associated with the phonon-plasmon coupled mode. The plasma was generated by thermal excitation of carriers in doped samples. It was possible to study a large variety of plasma excitations by controlling the concentration of the dopant and the ambient temperature. A complete, self consistant model based on standard dielectric response theory is presented, and applied to the measurements of the phonon-plasmon coupled mode. It is possible to recover, via this model, the effective coupled mode damping rate, the plasma damping rate, and the plasma frequency as functions of ambient temperature, or the carrier concentration.

Comparison of three empirical force fields for phonon calculations in CdSe quantum dots

Energy Technology Data Exchange (ETDEWEB)

Kelley, Anne Myers [Chemistry and Chemical Biology, University of California, Merced, 5200 North Lake Road, Merced, California 95343 (United States)

2016-06-07

Three empirical interatomic force fields are parametrized using structural, elastic, and phonon dispersion data for bulk CdSe and their predictions are then compared for the structures and phonons of CdSe quantum dots having average diameters of ~2.8 and ~5.2 nm (~410 and ~2630 atoms, respectively). The three force fields include one that contains only two-body interactions (Lennard-Jones plus Coulomb), a Tersoff-type force field that contains both two-body and three-body interactions but no Coulombic terms, and a Stillinger-Weber type force field that contains Coulombic interactions plus two-body and three-body terms. While all three force fields predict nearly identical peak frequencies for the strongly Raman-active “longitudinal optical” phonon in the quantum dots, the predictions for the width of the Raman peak, the peak frequency and width of the infrared absorption peak, and the degree of disorder in the structure are very different. The three force fields also give very different predictions for the variation in phonon frequency with radial position (core versus surface). The Stillinger-Weber plus Coulomb type force field gives the best overall agreement with available experimental data.

Review on Raman scattering in semiconductor nanowires: I. theory

Science.gov (United States)

Cantarero, Andrés

2013-01-01

Raman scattering is a nondestructive technique that is able to supply information on the crystal and electronic structures, strain, temperature, phonon-phonon, and electron-phonon interaction. In the particular case of semiconductor nanowires, Raman scattering provides additional information related to surfaces. Although correct, a theoretical approach to analyze the surface optical modes loses critical information when retardation is neglected. A comparison of the retarded and unretarded approaches clarifies the role of the electric and magnetic polarization in the Raman selection rules. Since most III-V compounds growing in the zincblende phase change their crystal structure to wurtzite when growing as nanowires, the polariton description will be particularized for these two important crystal phases. Confined phonons exist in cylindrical nanowires and couple with longitudinal and transverse modes due to the presence of the nanowire's surface. This coupling vanishes in the case of rotational symmetry. The boundary conditions of the electromagnetic fields on small-size nanowires (antenna effect) have a dramatic effect on the polarization properties of a Raman spectrum.

Coherent phonon optics in a chip with an electrically controlled active device.

Science.gov (United States)

Poyser, Caroline L; Akimov, Andrey V; Campion, Richard P; Kent, Anthony J

2015-02-05

Phonon optics concerns operations with high-frequency acoustic waves in solid media in a similar way to how traditional optics operates with the light beams (i.e. photons). Phonon optics experiments with coherent terahertz and sub-terahertz phonons promise a revolution in various technical applications related to high-frequency acoustics, imaging, and heat transport. Previously, phonon optics used passive methods for manipulations with propagating phonon beams that did not enable their external control. Here we fabricate a phononic chip, which includes a generator of coherent monochromatic phonons with frequency 378 GHz, a sensitive coherent phonon detector, and an active layer: a doped semiconductor superlattice, with electrical contacts, inserted into the phonon propagation path. In the experiments, we demonstrate the modulation of the coherent phonon flux by an external electrical bias applied to the active layer. Phonon optics using external control broadens the spectrum of prospective applications of phononics on the nanometer scale.

Sensitive Phonon-Based Probe for Structure Identification of 1T' MoTe2.

Science.gov (United States)

Zhou, Lin; Huang, Shengxi; Tatsumi, Yuki; Wu, Lijun; Guo, Huaihong; Bie, Ya-Qing; Ueno, Keiji; Yang, Teng; Zhu, Yimei; Kong, Jing; Saito, Riichiro; Dresselhaus, Mildred

2017-06-28

In this work, by combining transmission electron microscopy and polarized Raman spectroscopy for the 1T' MoTe 2 flakes with different thicknesses, we found that the polarization dependence of Raman intensity is given as a function of excitation laser wavelength, phonon symmetry, and phonon frequency, but has weak dependence on the flake thickness from few-layer to multilayer. In addition, the frequency of Raman peaks and the relative Raman intensity are sensitive to flake thickness, which manifests Raman spectroscopy as an effective probe for thickness of 1T' MoTe 2 . Our work demonstrates that polarized Raman spectroscopy is a powerful and nondestructive method to quickly identify the crystal structure and thickness of 1T' MoTe 2 simultaneously, which opens up opportunities for the in situ probe of anisotropic properties and broad applications of this novel material.

Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride

Science.gov (United States)

Cuscó, Ramon; Artús, Luis; Edgar, James H.; Liu, Song; Cassabois, Guillaume; Gil, Bernard

2018-04-01

Hexagonal boron nitride (h -BN) is a layered crystal that is attracting a great deal of attention as a promising material for nanophotonic applications. The strong optical anisotropy of this crystal is key to exploit polaritonic modes for manipulating light-matter interactions in 2D materials. h -BN has also great potential for solid-state neutron detection and neutron imaging devices, given the exceptionally high thermal neutron capture cross section of the boron-10 isotope. A good knowledge of phonons in layered crystals is essential for harnessing long-lived phonon-polariton modes for nanophotonic applications and may prove valuable for developing solid-state 10BN neutron detectors with improved device architectures and higher detection efficiencies. Although phonons in graphene and isoelectronic materials with a similar hexagonal layer structure have been studied, the effect of isotopic substitution on the phonons of such lamellar compounds has not been addressed yet. Here we present a Raman scattering study of the in-plane high-energy Raman active mode on isotopically enriched single-crystal h -BN. Phonon frequency and lifetime are measured in the 80-600-K temperature range for 10B-enriched, 11B-enriched, and natural composition high quality crystals. Their temperature dependence is explained in the light of perturbation theory calculations of the phonon self-energy. The effects of crystal anisotropy, isotopic disorder, and anharmonic phonon-decay channels are investigated in detail. The isotopic-induced changes in the phonon density of states are shown to enhance three-phonon anharmonic decay channels in 10B-enriched crystals, opening the possibility of isotope tuning of the anharmonic phonon decay processes.

Raman-scattering results from Y1-xCaxSr2Cu2GaO7

International Nuclear Information System (INIS)

Salamon, D.; Liu, R.; Klein, M.V.; Groenke, D.A.; Poeppelmeier, K.R.; Dabrowski, B.; Han, P.D.; Payne, D.A.

1993-01-01

We present a Raman-scattering study of Y 1-x Ca x Sr 2 Cu 2 GaO 7 for both the x=0 parent compound and doped compositions with x=0.25 and x=0.40. Extrapolation from YBa 2 Cu 3 O 7-d and other cuprates allows us to assign many of the Raman-active phonon modes in the x=0 material, as well as identify a two-magnon scattering peak, a second-order phonon scattering peak, and a Raman continuum out to 4000 cm -1 . Despite compositional inhomogeneities, the doped superconducting samples show some of the same low-energy phonon features as the x=0 material. There is, however, a doping-dependent shift in the positions of features in the 500--700 cm -1 range, possibly due to Ca locating on Sr sites instead of Y sites. The relative intensities of the phonon peaks in the doped material are also changed from the insulator (x=0), suggesting that a resonant Raman phenomenon is occurring. The temperature-dependent spectra show what appears to be a superconducting dip in the background intensity, but the low superconducting fractions in these samples make this difficult to verify. The doped material also has a Raman continuum out to 4000 cm -1 just as in the x=0 samples, but with the two-magnon and second-order phonon scattering peaks significantly reduced in intensity. This may be a result of changes in the long-range ordering, or another manifestation of the same resonance phenomena occurring at lower energies. Single-crystal samples of the doped material Y 1-x Ca x Sr 2 Cu 2 GaO 7 are necessary for a more conclusive Raman study

Multiphonon resonant Raman scattering in the semimagnetic semiconductor Cd1-xMnxTe: Froehlich and deformation potential exciton-phonon interaction

International Nuclear Information System (INIS)

Riera, R; Rosas, R; Marin, J L; Bergues, J M; Campoy, G

2003-01-01

A theory describing multiphonon resonant Raman scattering (MPRRS) processes in wide-gap diluted magnetic semiconductors is presented, with Cd 1-x Mn x Te as an example. The incident radiation frequency ω l is taken above the fundamental absorption region. The photoexcited electron and hole make real transitions through the LO phonon, when one considers Froehlich (F) and deformation potential (DP) interactions. The strong exchange interaction, typical of these materials, leads to a large spin splitting of the exciton states in the magnetic field. Neglecting Landau quantization, this Zeeman splitting gives rise to the formation of eight bands (two conduction and six valence ones) and ten different exciton states according to the polarization of the incident light. Explicit expressions for the MPRRS intensity of second and third order, the indirect creation and annihilation probabilities, the exciton lifetime, and the probabilities of transition between different exciton states and different types of exciton as a function of ω l and the external magnetic field are presented. The selection rules for all hot exciton transitions via exciton-photon interaction and F and DP exciton-phonon interactions are investigated. The exciton energies, as a function of B, the Mn concentration x, and the temperature T, are compared to a theoretical expression. Graphics for creation and annihilation probabilities, lifetime, and Raman intensity of second and third order are discussed

Raman scattering of rare earth hexaborides

International Nuclear Information System (INIS)

Ogita, Norio; Hasegawa, Takumi; Udagawa, Masayuki; Iga, Fumitoshi; Kunii, Satoru

2009-01-01

Raman scattering spectra were measured for the rare-earth hexaborides RB 6 (R = Ce, Gd, or Dy). All Raman-active phonons due to B 6 vibrations were observed in the range 600 - 1400 cm -1 . Anomalous peaks were detected below 200 cm -1 , which correspond to vibrations of rare-earth ion excited by second-order Raman scattering process. The intensity and energy of the rare-earth mode decrease with decreasing temperature. This suggests that the rare-earth ion vibrates in a shallow and anharmonic potential due to the boron cage. Using the reported values of mean square displacement of rare-earth ion, we estimated the anharmonic contribution for the rare-earth vibrations.

Two-phonon bound states in imperfect crystals

International Nuclear Information System (INIS)

Behera, S.N.; Samsur, Sk.

1980-01-01

The question of the occurrence of two-phonon bound states in imperfect crystals is investigated. It is shown that the anharmonicity mediated two-phonon bound state which is present in perfect crystals gets modified due to the presence of impurities. Moreover, the possibility of the occurrence of a purely impurity mediated two-phonon bound state is demonstrated. The bound state frequencies are calculated using the simple Einstein oscillator model for the host phonons. The two-phonon density of states for the imperfect crystal thus obtained has peaks at the combination and difference frequencies of two host phonons besides the peaks at the bound state frequencies. For a perfect crystal the theory predicts a single peak at the two-phonon bound state frequency in conformity with experimental observations and other theoretical calculations. Experimental data on the two-phonon infrared absorption and Raman scattering from mixed crystals of Gasub(1-c)Alsub(c)P and Gesub(1-c)Sisub(c) are analysed to provide evidence in support of impurity-mediated two-phonon bound states. The relevance of the zero frequency (difference spectrum) peak to the central peak, observed in structural phase transitions, is conjectured. (author)

Raman spectra of graphene ribbons

International Nuclear Information System (INIS)

Saito, R; Furukawa, M; Dresselhaus, G; Dresselhaus, M S

2010-01-01

Raman spectra of graphene nanoribbons with zigzag and armchair edges are calculated within non-resonant Raman theory. Depending on the edge structure and polarization direction of the incident and scattered photon beam relative to the edge direction, a symmetry selection rule for the phonon type appears. These Raman selection rules will be useful for the identification of the edge structure of graphene nanoribbons.

Polarized Raman scattering of single ZnO nanorod

International Nuclear Information System (INIS)

Yu, J. L.; Lai, Y. F.; Wang, Y. Z.; Cheng, S. Y.; Chen, Y. H.

2014-01-01

Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A 1 (TO), E 1 (TO), and E 2 high in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A 1 (TO) and E 1 (TO) phonon modes normalized to that of the E 2 high phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer

Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

Energy Technology Data Exchange (ETDEWEB)

Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

2011-05-15

Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural characterization of indium oxide nanostructures: a Raman analysis

International Nuclear Information System (INIS)

Berengue, Olivia M; Rodrigues, Ariano D; Chiquito, Adenilson J; Dalmaschio, Cleocir J; Leite, Edson R; Lanfredi, Alexandre J C

2010-01-01

In this work we report on structural and Raman spectroscopy measurements of pure and Sn-doped In 2 O 3 nanowires. Both samples were found to be cubic and high quality single crystals. Raman analysis was performed to obtain the phonon modes of the nanowires and to confirm the compositional and structural information given by structural characterization. Cubic-like phonon modes were detected in both samples and their distinct phase was evidenced by the presence of tin doping. As a consequence, disorder effects were detected evidenced by the break of the Raman selection rules.

Raman scattering of type-I clathrate compounds

International Nuclear Information System (INIS)

Takasu, Y.; Hasegawa, T.; Ogita, N.; Udagawa, M.; Avila, M.A.; Takabatake, T.

2006-01-01

Lattice dynamical properties of the type-I clathrate compounds of A 8 Ga 16 Ge 30 (A=Eu, Sr, Ba) have been investigated by Raman scattering. We are successful in the assignment of the observed Raman active phonons to proper symmetry and are able to separate the guest atom origin modes from framework origin modes for the first time experimentally. From the measurements of temperature dependence of the guest origin peaks, we also demonstrate the difference of the behavior of the guest atom at high temperature and low temperature

Phonon vibrational frequencies of all single-wall carbon nanotubes at the lambda point: reduced matrix calculations.

Science.gov (United States)

Wang, Yufang; Wu, Yanzhao; Feng, Min; Wang, Hui; Jin, Qinghua; Ding, Datong; Cao, Xuewei

2008-12-01

With a simple method-the reduced matrix method, we simplified the calculation of the phonon vibrational frequencies according to SWNTs structure and their phonon symmetric property and got the dispersion properties of all SWNTs at Gamma point in Brillouin zone, whose diameters lie between 0.6 and 2.5 nm. The calculating time is shrunk about 2-4 orders. A series of the dependent relationships between the diameters of SWNTs and the frequencies of Raman and IR active modes are given. Several fine structures including "glazed tile" structures in omega approximately d figures are found, which might predict a certain macro-quantum phenomenon of the phonons in SWNTs.

Phonon dynamics and Urbach energy studies of MgZnO alloys

Energy Technology Data Exchange (ETDEWEB)

Huso, Jesse, E-mail: jhuso@vandals.uidaho.edu; Che, Hui; Thapa, Dinesh; Canul, Amrah; Bergman, Leah [Department of Physics, University of Idaho, Moscow, Idaho 83844-0903 (United States); McCluskey, M. D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

2015-03-28

The Mg{sub x}Zn{sub 1−x}O alloy system is emerging as an environmentally friendly choice in ultraviolet lighting and sensor technologies. Knowledge of defects which impact their optical and material properties is a key issue for utilization of these alloys in various technologies. The impact of phase segregation, structural imperfections, and alloy inhomogeneities on the phonon dynamics and electronic states of Mg{sub x}Zn{sub 1−x}O thin films were studied via selective resonant Raman scattering (SRRS) and Urbach analyses, respectively. A series of samples with Mg composition from 0–68% were grown using a sputtering technique, and the optical gaps were found to span a wide UV range of 3.2–5.8 eV. The extent of the inherent phase segregation was determined via SRRS using two UV-laser lines to achieve resonance with the differing optical gaps of the embedded cubic and wurtzite structural domains. The occurrence of Raman scattering from cubic structures is discussed in terms of relaxation of the selection rules due to symmetry breaking by atomic substitutions. The Raman linewidth and Urbach energy behavior indicate the phase segregation region occurs in the range of 47–66% Mg. Below the phase segregation, the longitudinal optical phonons are found to follow the model of one-mode behavior. The phonon decay model of Balkanski et al. indicates that the major contributor to Raman linewidth arises from the temperature-independent term attributed to structural defects and alloy inhomogeneity, while the contribution from anharmonic decay is relatively small. Moreover, a good correlation between Urbach energy and Raman linewidth was found, implying that the underlying crystal dynamics affecting the phonons also affect the electronic states. Furthermore, for alloys with low Mg composition structural defects are dominant in determining the alloy properties, while at higher compositions alloy inhomogeneity cannot be neglected.

Resonant exciton-phonon coupling in ZnO nanorods at room temperature

Directory of Open Access Journals (Sweden)

Soumee Chakraborty

2011-09-01

Full Text Available Vibronic and optoelectronic properties, along with detailed studies of exciton-phonon coupling at room temperature (RT for random and aligned ZnO nanorods are reported. Excitation energy dependent Raman studies are performed for detailed analysis of multi-phonon processes in the nanorods. We report here the origin of coupling between free exciton and its associated phonon replicas, including its higher order modes, in the photoluminescence spectra at RT. Resonance of excitonic electron and resonating first order zone center LO phonon, invoked strongly by Frolich interaction, are made responsible for the observed phenomenon.

Circular dichroism and Raman optical activity in antiferromagnetic transition metal fluorides

International Nuclear Information System (INIS)

Hoffman, K.R.; Lockwood, D.J.; Yen, W.M.

2005-01-01

The Raman optical activity (ROA) of magnons in rutile-structure antiferromagnetic FeF 2 (T N = 78 K) has been studied as a function of temperature and applied magnetic field. For exciting light incident along the c axis, ROA is observed for magnons but not for phonons. In zero field, a small splitting (0.09 cm -1 ) of the two acoustic-magnon branches is observed for the first time by inelastic light scattering. The splitting in applied magnetic field is found to reduce with increasing temperature in accordance with theory. No ROA was detected for two-magnon excitations. In optical absorption measurements performed over thirty years ago, a very small circular dichroism (CD) was observed in the magnon sidebands of other simple rutile antiferromagnetic fluorides (MnF 2 and CoF 2 ). The origin of this CD was not understood at the time. The Raman studies of the one-magnon Raman scattering in FeF 2 have demonstrated that in zero field the degeneracy of the antiferromagnetic magnon branches is lifted by a weak magnetic dipole-dipole interaction, as predicted by Pincus and Loudon and by White four decades ago. The source of the observed CD in the magnon sidebands can now be traced to this same magnetic-dipole induced splitting

Calculation of the Raman intensity in graphene and carbon nanotubes

Science.gov (United States)

Moutinho, Marcus; Venezuela, Pedro

2014-03-01

Raman spectroscopy is one of the most important experimental techniques for characterization of carbon materials because it can give a lot of information about electronic and phonon structure in a non destructive way. We use a third-order quantum field model to obtain the theoretical Raman intensity for graphene and carbon nanotubes (CNT). The most important Raman peaks in graphitic materials comes from to the iLo and iTo phonon branches near to Γ and K points and, in this work, we focus our attention on some of these peaks, like the G, D and 2D bands, as a function of laser energy. The electronic and phonon dispersion used in our calculations reproduces the graphene ab initio results with GW corrections and the zone folding method is used to obtain the CNT ones. Our results show that the experimental G band Raman excitation profile for CNT can be reproduced if we use the proper electronic and phonon dispersions. We also show that the phonon dispersion may influence the shape of the graphene D band and the dispersive behavior of the 2D band for graphene and CNT. This work was supported by the Brazilian Nanocarbon Institute of Science and Technology (INCT/Nanocarbono), the Brazilian Network on Carbon Nanotube Research and the Brazilian agency CAPES

Resonance effects in Raman scattering of quantum dots formed by the Langmuir-Blodgett method

Energy Technology Data Exchange (ETDEWEB)

Milekhin, A G; Sveshnikova, L L; Duda, T A [Institute of Semiconductor Physics, Lavrentjev av.13, 630090, Novosibirsk (Russian Federation); Surovtsev, N V; Adichtchev, S V [Institute of Automation and Electrometry, Koptyug av.1, 630090, Novosibirsk (Russian Federation); Azhniuk, Yu M [Institute of Electron Physics, Universytetska Str. 21, 88017, Uzhhorod (Ukraine); Himcinschi, C [Institut fuer Theoretische Physik, TU Bergakademie Freiberg, Leipziger Str. 23, 09596, Freiberg (Germany); Kehr, M; Zahn, D R T, E-mail: milekhin@thermo.isp.nsc.r [Semiconductor Physics, Chemnitz University of Technology, Chemnitz (Germany)

2010-09-01

The enhancement of Raman scattering by optical phonon modes in quantum dots was achieved in resonant and surface-enhanced Raman scattering experiments by approaching the laser energy to the energy of either the interband transitions or the localized surface plasmons in silver nanoclusters deposited onto the nanostructures. Resonant Raman scattering by TO, LO, and SO phonons as well as their overtones was observed for PbS, ZnS, and ZnO quantum dots while enhancement for LO and SO modes in CdS quantum dots with a factor of about 700 was measured in surface enhanced Raman scattering experiments. Multiple phonon Raman scattering observed up to 5th and 7th order for CdS and ZnO, respectively, confirms the high crystalline quality of the grown QDs.

Phonon squeezed states: quantum noise reduction in solids

Science.gov (United States)

Hu, Xuedong; Nori, Franco

1999-03-01

This article discusses quantum fluctuation properties of a crystal lattice, and in particular, phonon squeezed states. Squeezed states of phonons allow a reduction in the quantum fluctuations of the atomic displacements to below the zero-point quantum noise level of coherent phonon states. Here we discuss our studies of both continuous-wave and impulsive second-order Raman scattering mechanisms. The later approach was used to experimentally suppress (by one part in a million) fluctuations in phonons. We calculate the expectation values and fluctuations of both the atomic displacement and the lattice amplitude operators, as well as the effects of the phonon squeezed states on macroscopically measurable quantities, such as changes in the dielectric constant. These results are compared with recent experiments. Further information, including preprints and animations, are available in http://www-personal.engin.umich.edu/∼nori/squeezed.html.

High resolution resonant Raman scattering in InP and GaAs

International Nuclear Information System (INIS)

Kernohan, E.T.M.

1996-04-01

Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measuring the variations in scattering intensity under different excitation conditions. The shape of the Raman line also contains important information, but this has usually been lost because the low signal strengths mean that resolution has been sacrificed for sensitivity. It might therefore be expected that further insights into the processes involved in Raman scattering could be obtained by using high resolution methods. In this thesis I have measured single- and multiple- phonon scattering from bulk GaAs and InP with a spectral resolution better than the intrinsic widths of the Raman lines. For scattering in the region of one longitudinal optic (LO) phonon energy, it is found that in InP the scattering in the allowed and forbidden configurations occur at different Raman shifts, above and below the zone-centre phonon energy respectively. These shifts are used to determine the scattering processes involved, and how they differ between InP and GaAs. The lineshapes obtained in multiple-phonon scattering are found to depend strongly on the excitation energy used, providing evidence for the presence of intermediate resonances. The measured spectra are used to provide information about the phonon dispersion of InP, whose dispersion it is difficult to measure in any other way, and the first evidence is found for an upward dispersion of the LO mode. Raman lineshapes are measured for InP in a magnetic field. The field alters the electronic bandstructure, leading to a series of strong resonances in the Raman efficiency due to interband magneto-optical transitions between Landau levels. This allows multiphonon processes up to sixth-order to be investigated. (author)

Phonon dynamics of graphene on metals

Science.gov (United States)

Taleb, Amjad Al; Farías, Daniel

2016-03-01

The study of surface phonon dispersion curves is motivated by the quest for a detailed understanding of the forces between the atoms at the surface and in the bulk. In the case of graphene, additional motivation comes from the fact that thermal conductivity is dominated by contributions from acoustic phonons, while optical phonon properties are essential to understand Raman spectra. In this article, we review recent progress made in the experimental determination of phonon dispersion curves of graphene grown on several single-crystal metal surfaces. The two main experimental techniques usually employed are high-resolution electron energy loss spectroscopy (HREELS) and inelastic helium atom scattering (HAS). The different dispersion branches provide a detailed insight into the graphene-substrate interaction. Softening of optical modes and signatures of the substrate‧s Rayleigh wave are observed for strong graphene-substrate interactions, while acoustic phonon modes resemble those of free-standing graphene for weakly interacting systems. The latter allows determining the bending rigidity and the graphene-substrate coupling strength. A comparison between theory and experiment is discussed for several illustrative examples. Perspectives for future experiments are discussed.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Harish Kumar [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Sreenivas, K [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Katiyar, R S [Department of Physics, University of Puerto Rico, San Juan, PR 00931-3343 (Puerto Rico); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2007-10-07

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm{sup -1}. The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A{sub 1} (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries.

Defect induced activation of Raman silent modes in rf co-sputtered Mn doped ZnO thin films

International Nuclear Information System (INIS)

Yadav, Harish Kumar; Sreenivas, K; Katiyar, R S; Gupta, Vinay

2007-01-01

We study the influence of Mn doping on the vibrational properties of rf sputtered ZnO thin films. Raman spectra of the Mn doped ZnO samples reveal two additional vibrational modes, in addition to the host phonon modes, at 252 and 524 cm -1 . The intensity of the additional modes increases continuously with Mn concentration in ZnO and can be used as an indication of Mn incorporation in ZnO. The modes are assigned to the activation of ZnO silent modes due to relaxation of Raman selection rules produced by the breakdown of the translational symmetry of the crystal lattice with the incorporation of Mn at the Zn site. Furthermore, the A 1 (LO) mode is observed with very high intensity in the Raman spectra of undoped ZnO thin film and is attributed to the built-in electric field at the grain boundaries

Temperature dependence of Brillouin light scattering spectra of acoustic phonons in silicon

International Nuclear Information System (INIS)

Olsson, Kevin S.; Klimovich, Nikita; An, Kyongmo; Sullivan, Sean; Weathers, Annie; Shi, Li; Li, Xiaoqin

2015-01-01

Electrons, optical phonons, and acoustic phonons are often driven out of local equilibrium in electronic devices or during laser-material interaction processes. The need for a better understanding of such non-equilibrium transport processes has motivated the development of Raman spectroscopy as a local temperature sensor of optical phonons and intermediate frequency acoustic phonons, whereas Brillouin light scattering (BLS) has recently been explored as a temperature sensor of low-frequency acoustic phonons. Here, we report the measured BLS spectra of silicon at different temperatures. The origins of the observed temperature dependence of the BLS peak position, linewidth, and intensity are examined in order to evaluate their potential use as temperature sensors for acoustic phonons

Effect of pressure on the second-order Raman scattering intensities of zincblende semiconductors

Energy Technology Data Exchange (ETDEWEB)

Trallero-Giner, C.; Syassen, K. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, 70569 Stuttgart (Germany)

2010-01-15

A microscopic description of the two-phonon scattering intensities in direct-gap zincblende-type semiconductors as a function of hydrostatic pressure and for non-resonant excitation is presented. The calculations were performed according to the electron-two-phonon deformation potential interaction for the {gamma}{sub 1} and {gamma}{sub 15} components of the Raman tensor. It is shown that the effect of pressure on the Raman scattering cross-section exhibits a complex behavior according to the contribution of the acoustical or optical phonons to the overtones and combinations. Second-order scattering intensities via acoustical modes could decrease or increase with increasing hydrostatic pressure, while for combinations or overtones of optical phonons a decreasing intensity is obtained. Calculations of the effect of pressure on second-order Raman intensities are compared to experimental results for ZnTe. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Raman and IR phonons in ferroelectric Sr.sub.0.35./sub.Ba.sub.0.69./sub.Nb.sub.2./sub.O.sub.6.04./sub. single crystals

Czech Academy of Sciences Publication Activity Database

Buixaderas, Elena; Gregora, Ivan; Hlinka, Jiří; Dec, J.; Lukasiewicz, T.

2013-01-01

Roč. 86, 2-3 (2013), s. 217-229 ISSN 0141-1594 R&D Projects: GA ČR GAP204/10/0616 Institutional research plan: CEZ:AV0Z10100520 Keywords : ferroelectrics * Raman spectroscopy * IR spectroscopy * phonons * relaxors * tungsten-bronze materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.044, year: 2013

Raman study of damage processes in Si+-implanted GaAs

International Nuclear Information System (INIS)

Ivanda, M.; Desnica, U.V.; Haynes, T.E.; Hartmann, I.; Kiefer, W.

1994-09-01

Ion-induced damage in GaAs as a function of ion dose following 100 keV Si + implants has been investigated by Raman spectroscopy. A new approach for decomposition of Raman scattering intensity on to the crystalline and amorphous phase components has been used in analysis of Raman spectra. With increasing ion dose the following was observed: (a) the widths of vibrational bands of a-phase significantly increase, while the width of the LO(Γ) phonon band of c-phase remains unchanged; (b) the longitudinal optical phonon band of c-phase completely dissappears, while the transverse optical phonon mode evolves in to a new band of a-phase; (c) the wavenumbers of all vibrational bands of a- and c-phase shift to lower values by ∼ 10--15 cm -1 . A number of mechanisms possibly accountable for these shifts were analysed and evaluated

Theory of phonon properties in doped and undoped CuO nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Bahoosh, S.G. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Wesselinowa, J.M., E-mail: julia@phys.uni-sofia.bg [University of Sofia, Department of Physics, 5 J. Bouchier Blvd., 1164 Sofia (Bulgaria)

2012-07-02

We have studied the phonon properties of CuO nanoparticles and have shown the importance of the anharmonic spin–phonon interaction. The Raman peaks of CuO nanoparticles shift to lower frequency and become broader as the particle size decreases in comparison with those of bulk CuO crystals owing to size effects. By doping with different ions, in dependence of their radius compared to the host ionic radius the phonon energies ω could be reduced or enhanced. The phonon damping is always enhanced through the ion doping effects. -- Highlights: ► The phonon properties of CuO nanoparticles are studied using a miscroscopic model. ► The phonon energy decreases whereas the damping increases with decreasing of particle size. ► It is shown the importance of the anharmonic spin–phonon interaction. ► By doping with RE-ions the phonon energy is reduced, whereas with TM-ions it is enhanced. ► The phonon damping is always enhanced through the ion doping effects.

Effective electron mass and phonon modes in n-type hexagonal InN

Science.gov (United States)

Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

2002-03-01

Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

Infrared-active optical phonons in LiFePO4 single crystals

Science.gov (United States)

Stanislavchuk, T. N.; Middlemiss, D. S.; Syzdek, J. S.; Janssen, Y.; Basistyy, R.; Sirenko, A. A.; Khalifah, P. G.; Grey, C. P.; Kostecki, R.

2017-07-01

Infrared-active optical phonons were studied in olivine LiFePO4 oriented single crystals by means of both rotating analyzer and rotating compensator spectroscopic ellipsometry in the spectral range between 50 and 1400 cm-1. The eigenfrequencies, oscillator strengths, and broadenings of the phonon modes were determined from fits of the anisotropic harmonic oscillator model to the data. Optical phonons in a heterosite FePO4 crystal were measured from the delithiated ab-surface of the LiFePO4 crystal and compared with the phonon modes of the latter. Good agreement was found between experimental data and the results of solid-state hybrid density functional theory calculations for the phonon modes in both LiFePO4 and FePO4.

Production of high temperature superconductors and characteristics by infrared and Raman spectroscopy

International Nuclear Information System (INIS)

Thomsen, C.

1991-01-01

This final report, which is partly kept short, is concerned with electron/phonon interaction and the determination of the band gap in high temperature superconductors (YBa 2 Cu 3 O 7 ). The final report is divided into four parts, which reflect the individual working groups: 1. Raman spectroscopy, 2. IR spectroscopy (reflection measurements, isotope effect, superconducting energy gap, behaviour of infrared active phonons), 3. Magnetic field measurements, and 4. Theory (initial calculation of the metal/isolator transfer in BaBiO 3 ). (MM) [de

Characterization of Materials by Raman Scattering

Science.gov (United States)

Kozielski, M.

2007-03-01

The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Sharma, Yogesh; Sahoo, Satyaprakash, E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu; Perez, William; Katiyar, Ram S., E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics, University of Puerto Rico, Puerto Rico 00936-8377 (United States); Mukherjee, Somdutta [Department of Physics, Indian Institute of Technology, Kanpur (India); Gupta, Rajeev, E-mail: satya504@gmail.com, E-mail: guptaraj@iitk.ac.in, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics, Indian Institute of Technology, Kanpur (India); Department of Materials Science Programme, Indian Institute of Technology, Kanpur (India); Garg, Ashish [Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur (India); Chatterjee, Ratnamala [Department of Physics, Indian Institute of Technology, Delhi (India)

2014-05-14

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO{sub 3} over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Néel transition at T{sub N} ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below T{sub N}. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near T{sub N}. An additional phonon anomaly was identified at T{sup *} ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman frequencies between T{sub N} and T{sup *} suggest competing WFM and AFM interactions. A close match between the phonon frequency of B{sub 3g} (3)-octahedral rotation mode with the square of sublattice magnetization between T{sub N} and T{sup *} is indicative of the presence of spin-phonon coupling in multiferroic YCrO{sub 3}.

The effect of n- and p-type doping on coherent phonons in GaN.

Science.gov (United States)

Ishioka, Kunie; Kato, Keiko; Ohashi, Naoki; Haneda, Hajime; Kitajima, Masahiro; Petek, Hrvoje

2013-05-22

The effect of doping on the carrier-phonon interaction in wurtzite GaN is investigated by pump-probe reflectivity measurements using 3.1 eV light in near resonance with the fundamental band gap of 3.39 eV. Coherent modulations of the reflectivity due to the E2 and A1(LO) modes, as well as the 2A1(LO) overtone are observed. Doping of acceptor and donor atoms enhances the dephasing of the polar A1(LO) phonon via coupling with plasmons, with the effect of donors being stronger. Doping also enhances the relative amplitude of the coherent A1(LO) phonon with respect to that of the high-frequency E2 phonon, though it does not affect the relative intensity in Raman spectroscopic measurements. We attribute this enhanced coherent amplitude to the transient depletion field screening (TDFS) excitation mechanism, which, in addition to impulsive stimulated Raman scattering (ISRS), contributes to the generation of coherent polar phonons even for sub-band gap excitation. Because the TDFS mechanism requires photoexcitation of carriers, we argue that the interband transition is made possible at a surface with photon energies below the bulk band gap through the Franz-Keldysh effect.

Investigation of Ferroelectric Domain Walls by Raman Spectroscopy

Science.gov (United States)

Stone, Gregory A.

Ferroelectric materials are characterized by an intrinsic spontaneous electric dipole moment that can be manipulated by the application of an electric field. Regions inside the crystal, known as domains, can have the spontaneous dipole moments oriented in a different direction than the surrounding crystal. Due to favorable piezoelectric, pyroelectric, electro-optic, and nonlinear optical properties, ferroelectric materials are attractive for commercial applications. Many devices, such as nonlinear frequency converters, require precisely engineered domain patterns. The properties of domains and their boundaries, known as domain walls, are vital to the performance and limitations of these devices. As a result, ferroelectric domains and the domain walls have been the focus of many scientific studies. Despite all this work, questions remain regarding their properties. This work is aimed at developing a better understanding of the properties of the domain wall using confocal Raman spectroscopy. Raman spectra taken from domain walls in Lithium Niobate and Lithium Tantalate reveal two distinct changes in the Raman spectra: (1) Shifts in frequency of the bulk Raman modes, which persists over a range of 0.2-0.5 mu m from the domain wall. The absence of this effect in defect free stoichiometric Lithium Tantalate indicates that the shifts are related to defects inside the crystal. (2) The presence of Raman modes corresponding to phonons propagating orthogonal to the laser beam axis, which are not collected in the bulk crystal. The phonons also preferential propagate normal to the domain wall. These modes are detected up to 0.35 mum from the domain wall. The observation and separation of these effects was made possible by the optimized spatial resolution (0.23 mum) of a home-built scanning confocal microscope and the fact that degeneracy of the transverse and longitudinal phonon polarization is lifted by polar phonons in Lithium Niobate and Lithium Tantalate. Raman

Study of hot carrier relaxation in quantum wells by subpicosecond Raman scattering

International Nuclear Information System (INIS)

Kim, Dai-sik; Yu, P.Y.

1990-03-01

Relaxation of hot carriers excited by subpicosecond laser pulses has been studied by Raman scattering in GaAs/AlAs multiple quantum wells with well widths varying between 100 and 1000 Angstrom. The hot phonon population observed by Raman scattering is found to decrease with the well width despite the fact that the hot electron temperature remains constant. The results are explained in terms of confinement of both electrons and optical phonons in quantum wells

Laser Raman and resonance Raman spectroscopies of natural semiconductor mineral cinnabar, α-HgS, from various mines

International Nuclear Information System (INIS)

Gotoshia, Sergo V; Gotoshia, Lamara V

2008-01-01

Natural minerals α-HgS from various mines have been studied by laser Raman spectroscopy and resonance Raman spectroscopy. The crystals differ from each other in the content of selenium impurity, included in samples from some mines. Based on the Raman spectra and the factor-group analysis the classification of the first order phonons and then the comparison of the results with the results from other works were carried out. The Raman spectra analysis of minerals from various mines show the selenium impurity gap vibration at 203 cm -1 and 226 cm -1 frequencies, respectively. On the basis of statistical measurements of the Raman spectra one can conclude that impurity frequencies of α-HgS may be generally used for the identification of the mine. Resonance Raman scattering for pure minerals has been studied by a dye laser. Phonon resonance in the indirect semiconductor α-HgS is found to be far more intense than the indirect resonance detected until now in various semiconductors in the proximity of the first indirect band E g , for instance, in GaP. In our opinion, this may be conditioned by cinnabar band structure peculiarities. Low resonance has also been fixed in 'dirty' minerals at the spectral band frequency of 203 cm -1 characterizing gap vibration of isomorphic impurity Se in cinnabar

Electron hopping and optic phonons in Eu3S4

International Nuclear Information System (INIS)

Guentherodt, G.

1981-01-01

Raman scattering on single crystals of Eu 3 S 4 does not show the allowed q=o phonon modes in the cubic phase and exhibits no new modes in the distorted low temperature phase (T 2- ions. This mode does not show any anomaly near the charge order -disorder phase transition Tsub(t)=186 K. Temperature tunable spin fluctuations associated with the temperature activated Eu 2+ → Eu 3+ electron hopping are detected in the scattering intensity, superimposed on the usual thermal spin disorder. (author)

Raman scattering characterization of space solar cell structures

Science.gov (United States)

Mintairov, Alexander M.; Khvostikov, V. P.; Paleeva, E. V.; Sorokina, S. V.

1995-01-01

A contactless method for the determination of the free-carrier density and the composition distribution across the thickness of 3-5 multi-layer solar cell structures, using the Raman scattering method, is developed. The method includes a step analysis of Raman spectra from optical phonons and phonon-plasmon modes of different layers. The method provides simultaneous measurements of the element composition and the thickness of the structure's layers together with the free-carrier density. The results of measurements of the free-carrier density composition distributions of the liquid phase epitaxy grown AlGaAs/GaAs and GaSb solar cell structures are presented and discussed.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

OpenAIRE

P. Sangeetha; K. Jeganathan; V. Ramakrishnan

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high) phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is foun...

Phonon and thermal properties of exfoliated TaSe2 thin films

International Nuclear Information System (INIS)

Yan, Z.; Jiang, C.; Renteria, J.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T.; Goli, P.; Balandin, A. A.

2013-01-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe 2 ) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E 2g peak of TaSe 2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A 1g and E 2g , are −0.013 and −0.0097 cm −1 / o C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe 2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe 2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials

Phonon and thermal properties of exfoliated TaSe2 thin films

Science.gov (United States)

Yan, Z.; Jiang, C.; Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Goli, P.; Renteria, J.; Salguero, T. T.; Balandin, A. A.

2013-11-01

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E2g peak of TaSe2 presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A1g and E2g, are -0.013 and -0.0097 cm-1/oC, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ˜16 W/mK to ˜9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe2 channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Multi-gap superconductivity in MgB2: Magneto-Raman spectroscopy

International Nuclear Information System (INIS)

Blumberg, G.; Mialitsin, A.; Dennis, B.S.; Zhigadlo, N.D.; Karpinski, J.

2007-01-01

Electronic Raman scattering studies on MgB 2 single crystals as a function of excitation and polarization have revealed three distinct superconducting features: a clean gap below 37 cm -1 and two coherence peaks at 109 and 78 cm -1 which we identify as the superconducting gaps in π- and σ-bands and as the Leggett's collective mode arising from the fluctuation in the relative phase between two superconducting condensates residing on corresponding bands. The temperature and field dependencies of the superconducting features have been established. A phononic Raman scattering study of the E 2g boron stretching mode anharmonicity and of superconductivity induced self-energy effects is presented. We show that anharmonic two phonon decay is mainly responsible for the unusually large linewidth of the E 2g mode. We observe ∼2.5% hardening of the E 2g phonon frequency upon cooling into the superconducting state and estimate the electron-phonon coupling strength associated with this renormalization

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Directory of Open Access Journals (Sweden)

Shoichi Kabuyanagi

2016-01-01

Full Text Available We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge. By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

Phonon stiffen and soften at zigzag- and armchair-dominated edges of exfoliated bilayer graphene ribbon presented by Raman spectra

Science.gov (United States)

Xia, Minggang; Zhou, Xiaohua; Xin, Duqiang; Xu, Qiang

2018-01-01

The Raman spectra at the edge of the exfoliated bilayer graphene ribbon (GR) were investigated in detail. Results show that both G and 2D phonons stiffen (wave number increases) at zigzag-dominated edge, while they soften at armchair-dominated edge compared with those at the middle position in the GR. Furthermore, the full widths at half maximum intensity of both G and 2D Raman peaks narrow at the zigzag-dominated edge, while they broaden at the armchair-dominated edge. The stiffness and softness are attributed to the C-C bonds at the edge. For zigzag-dominated edge, the stiffness may originate in the increase of the force constant induced by the shrinking of C-C bond. For armchair-dominated edge, the softness may be due to the decrease of the force constant induced by the unsaturated hanging bonds at edge, which is different from Kohn anomaly and charge doping. The analysis is in agreement well with others calculation results about C-C bonds and the edge energy. These results may be useful to understand physical properties at the bilayer graphene edge and for applications in the device by taking advantage of the edge states in bilayer graphene.

Optical phonon modes of wurtzite InP

Science.gov (United States)

Gadret, E. G.; de Lima, M. M.; Madureira, J. R.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F.; Cantarero, A.

2013-03-01

Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering spectroscopy. The wires were grown along the [0001] axis by the vapor-liquid-solid method. The A1(TO), E2h, and E1(TO) phonon modes of the wurtzite symmetry were identified by using light linearly polarized along different directions in backscattering configuration. Additionally, forbidden longitudinal optical modes have also been observed. Furthermore, by applying an extended 11-parameter rigid-ion model, the complete dispersion relations of InP in the wurtzite phase have been calculated, showing a good agreement with the Raman experimental data.

Phonon dispersion relations for caesium thiocyanate

International Nuclear Information System (INIS)

Irving, M.A.; Smith, T.F.; Elcombe, M.M.

1984-01-01

Room temperature phonon dispersion relations for frequencies below 2 THz have been measured, along the three orthorhombic axes and selected diagonal directions by neutron inelastic scattering, for caesium thiocyanate. These curves, which represent 13 acoustic modes and 11 optic modes of vibration, do not agree with the dispersion behaviour calculated from the rigid-ion model developed by Ti and Ra to describe their Raman scattering observations

Raman Optical Activity and Raman Spectra of Amphetamine Species

DEFF Research Database (Denmark)

Berg, Rolf W.; Shim, Irene; White, Peter Cyril

2012-01-01

Theoretical calculations and preliminary measurements of vibrational Raman optical activity (ROA) spectra of different species of amphetamine (amphetamine and amphetamine-H+) are reported for the first time. The quantum chemical calculations were carried out as hybrid ab initio DFT-molecular orbi......Theoretical calculations and preliminary measurements of vibrational Raman optical activity (ROA) spectra of different species of amphetamine (amphetamine and amphetamine-H+) are reported for the first time. The quantum chemical calculations were carried out as hybrid ab initio DFT...... are employed for identification purposes. The DFT calculations show that the most stable conformations are those allowing for close contact between the aromatic ring and the amine hydrogen atoms. The internal rotational barrier within the same amphetamine enanti- omer has a considerable influence on the Raman...

Identification of Raman peaks of high-Tc cuprates in normal state through density of states

International Nuclear Information System (INIS)

Bishoyi, K.C.; Rout, G.C.; Behera, S.N.

2007-01-01

We present a microscopic theory to explain and identify the Raman spectral peaks of high-T c cuprates R 2-x M x CuO 4 in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green's function technique of Zubarev at zero wave vector and finite (room) temperature limit. The four Raman active peaks (P 1 -P 4 ) representing the electronic states of the atomic sub-systems of the cuprate system are identified by the calculated quasi-particle energy bands and electron density of states (DOS). The effect of interactions on these peaks are also explained

Raman spectra of Pm2O3, PmF3, PmCl3, PmBr3 and PmI3

International Nuclear Information System (INIS)

Wilmarth, W.R.; Peterson, J.R.

1988-01-01

Raman spectral data are presented for the sesquioxide and the trihalides (F, Cl, Br and I) of promethium. The Raman spectra of these lanthanide compounds are reported for the first time and are compared with those of the homologous lanthanide compounds. Tentative symmetry assignments have been made for the observed Raman-active bands based on factor group analysis of their respective crystal structures and comparisons with the assigned Raman spectra of other lanthanide compounds. The characteristic band patterns of the Raman phonon spectra have been found to be very useful in determining the crystal structure of the respective promethium compounds. (author)

Subtle Raman signals from nano-diamond and β-SiC thin films

International Nuclear Information System (INIS)

Kuntumalla, Mohan Kumar; Ojha, Harish; Srikanth, Vadali Venkata Satya Siva

2013-01-01

Micro Raman scattering experiments are carried out in pursuit of subtle but discernable signals from nano-diamond and β-SiC thin films. The thin films are synthesized using microwave plasma assisted chemical vapor deposition technique. Raman scattering experiments in conjunction with scanning electron microscopy and x-ray diffraction were carried out to extract microstructure and phase information of the above mentioned thin films. Certain subtle Raman signals have been identified in this work. In the case of nanodiamond thin films, Raman bands at ∼ 485 and ∼ 1220 cm −1 are identified. These bands have been assigned to the nanodiamond present in nanodiamond thin films. In the case of nano β-SiC thin films, optical phonons are identified using surface enhanced Raman scattering. - Highlights: ► Subtle Raman signals from nano-diamond and β-silicon carbide related thin films. ► Raman bands at ∼ 485 and ∼ 1220 cm −1 from nanodiamond thin films are identified. ► Longitudinal optical phonon from nano β-silicon carbide thin films is identified

Pressure measurements of TO-phonon anharmonicity in isotopic ZnS

Energy Technology Data Exchange (ETDEWEB)

Tallman, R.E.; Weinstein, B.A. [SUNY at Buffalo, Department of Physics, Buffalo, NY 14260 (United States); Ritter, T.M. [Dept. of Chemistry and Physics, UNC Pembroke, NC 28372 (United States); Cantarero, A. [Dept. of Physics and Institute of Materials Science, University of Valencia (Spain); Serrano, J.; Lauck, R.; Cardona, M. [Max-Planck-Institut fuer Festkoerperforschung, 70569 Stuttgart (Germany)

2004-03-01

We have measured the dependence on pressure of the line-widths of the TO and LO Raman phonons of {beta}-ZnS. In order to enhance the phenomena observed, and to eliminate possible effects of isotopic disorder, we have measured a nearly isotopically pure crystal, {sup 68}Zn{sup 32}S. The strongly structured pressure effects observed are interpreted on the basis of anharmonic decay and the corresponding two-phonon density of states. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical and acoustic phonon modes in strained InGaAs/GaAs rolled up tubes

Science.gov (United States)

Angelova, T.; Shtinkov, N.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Deneke, Ch.; Schmidt, O. G.; Cros, A.

2012-05-01

Rolled-up semiconductor tubes of various diameters made of alternating In0.215Ga0.785As/GaAs layers have been investigated by means of Raman scattering. The optical and acoustic phonon modes of individual tubes have been studied and compared with the characteristics of the surrounding material. After tube formation, the frequency of the phonon modes shifts with respect to the as-grown material and disorder activated modes are observed. The frequency shifts are related to the residual strain in the tubes through the deformation potential approximation. Good agreement with atomistic valence force field simulations and x-ray micro-diffraction measurements is found. By comparison with x-ray data, a Raman strain constant K = 0.65 is proposed for In0.215Ga0.785As. In the low frequency range, acoustic mode doublets are observed on the tubes that are absent in the surrounding material. They show clear evidence of the formation of periodic superlattices after the rolling-up process, and give insight into the quality of their interfaces.

Temperature dependence of Raman scattering in β-(AlGa2O3 thin films

Directory of Open Access Journals (Sweden)

Xu Wang

2016-01-01

Full Text Available We report a detailed investigation on temperature-dependent Raman scattering of β-(AlGa2O3 thin films with different Al content (0-0.72 under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in β-(AlGa2O3 thin films, which can provide an experimental basis for realization of (AlGa2O3-based optoelectronic device applications.

Active and passive vibration isolation in piezoelectric phononic rods with external voltage excitation

Directory of Open Access Journals (Sweden)

Qicheng Zhang

2017-05-01

Full Text Available Active piezoelectric materials are applied to one-dimensional phononic crystals, for the control of longitudinal vibration propagation both in active and passive modes. Based on the electromechanical coupling between the acoustical vibration and electric field, the electromechanical equivalent method is taken to theoretically predict the transmission spectrum of the longitudinal vibration. It is shown that the phononic rod can suppress the vibration efficiently at the frequencies of interest, by actively optimizing the motions of piezoelectric elements. In an illustrated phononic rod of 11.2cm long, active tunable isolations of more than 20dB at low frequencies (500Hz-14kHz are generated by controlling the excitation voltages of piezoelectric elements. Meanwhile, passive fixed isolation at high frequencies (14k-63kHz are presented by its periodicity characteristics. Finite element simulations and vibration experiments on the rod demonstrate the effectiveness of the approach in terms of its vibration isolation capabilities and tunable characteristics. This phononic rod can be manufactured easily and provides numerous potential applications in designing isolation mounts and platforms.

Photon control of phonons in mixed crystal quantum dots

Energy Technology Data Exchange (ETDEWEB)

Ingale, Alka

2003-12-15

Coherent phonon oscillations in solids can be excited impulsively by a single femtosecond laser pulse whose duration is shorter than a phonon period. In the impulsive stimulated Raman scattering (ISRS) experiment, scattering of probe is monitored as a function of time with respect to pump to generate time domain spectra of coherent phonons. In this paper, we present one such study of CdSe{sub 0.68}Te{sub 0.32} (d{approx}80 A) quantum dots in glass matrix, i.e semiconductor-doped glass (SDG) RG780 from Schott, USA and the experiment was performed at Prof. Merlin's laboratory at the University of Michigan, USA. Here, we present first report of selectively driving only CdSe-like modes in these mixed crystal quantum dots using photon control with two pump beams.

Evidence of localized amorphous silicon clustering from Raman depth-probing of silicon nanocrystals in fused silica

International Nuclear Information System (INIS)

Barba, D; Martin, F; Ross, G G

2008-01-01

Silicon nanocrystals (Si-nc) and amorphous silicon (α-Si) produced by silicon implantation in fused silica have been studied by micro-Raman spectroscopy. Information regarding the Raman signature of the α-Si phonon excitation was extracted from Raman depth-probing measurements using the phenomenological phonon confinement model. The spectral deconvolution of the Raman measurements recorded at different laser focusing depths takes into account both the Si-nc size variation and the Si-nc spatial distribution within the sample. The phonon peak associated with α-Si around 470 cm -1 is greatest for in-sample laser focusing, indicating that the formation of amorphous silicon is more important in the region containing a high concentration of silicon excess, where large Si-nc are located. As also observed for Si-nc systems prepared by SiO x layer deposition, this result demonstrates the presence of α-Si in high excess Si implanted Si-nc systems

Interface plasmon-phonons modes in ion-beam synthesized Mg2Si nanolayers

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.

2009-01-01

Raman scattering of samples, representing n- and p-type Si matrix with unburied Mg 2 Si nanolayers, formed by ion-beam synthesis, are studied. Despite the features in the Raman spectra attributed to the polariton modes with frequencies between those of the TO and LO phonons, additional features outside this interval are detected. The frequencies of these features are very sensitive to the plasma frequency, being different in the n- and p-type Si matrix and to the annealing time. The latter implies the generation of interface plasmonphonons modes. The frequencies of the interface plasmon-phonon modes are calculated and compared with the experimental results. The order of the carrier concentration in Mg 2 Si, the data of which are not available in the literature, is evaluated. (authors)

Micro-Raman scattering in ZnTe thin films

International Nuclear Information System (INIS)

Larramendi, E. M.; Gutierrez Z-B, K.; Hernandez, E.; Melo, O. de; Berth, G.; Wiedemeier, V.; Lischka, K; Schikora, D.; Woggon, U.

2008-01-01

In this work we present micro-raman measurements on ZnTe thin films grown by isothermal closed space sublimation on GaAs(001) substrates in helium and nitrogen atmospheres. Micro-raman spectra were recorded at room temperature using the backscattering geometry (illuminated spot: 3 μm2, 0.3 cm-1 of resolution and the line 532 nm of a DPSSL as power excitation). Up to four order LO-phonon replicas and no peak from TO phonon were observed in the micro-raman spectra as evidence of the epitaxial character and good quality of the films (the TO mode is forbidden according to the selection rules for backscattering along [001] of this heterostructure). The micro-raman spectra also revealed two features at low energy, which have been assigned incorrectly in recent works. We demonstrate that these raman peaks can be associated to the presence of few monolayers of crystalline tellurium or its oxides on the surface of the films. These features were not observed in micro-raman spectra of as grown ZnTe films terminated in a Zn surface. However, they were detected after a prolonged exposure of the samples to air. In addition, it is shown that this effect is accelerated under a high power laser excitation (laser annealing) as used in conventional micro-Raman measurement setups. Preliminary results that suggest the inclusion of nitrogen in ZnTe structure are also shown. (Full text)

Raman scattering study of the anharmonic effects in CeO2-y nanocrystals

Science.gov (United States)

Popović, Z. V.; Dohčević-Mitrović, Z.; Cros, A.; Cantarero, A.

2007-12-01

We have studied the temperature dependence of the F2g Raman mode phonon frequency and broadening in CeO2-y nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for nanosized CeO2 powders than in the bulk counterpart.

Raman scattering study of the anharmonic effects in CeO2-y nanocrystals

International Nuclear Information System (INIS)

Popovic, Z V; Dohcevic-Mitrovic, Z; Cros, A; Cantarero, A

2007-01-01

We have studied the temperature dependence of the F 2g Raman mode phonon frequency and broadening in CeO 2-y nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for nanosized CeO 2 powders than in the bulk counterpart

Active tuning of surface phonon polariton resonances via carrier photoinjection

Science.gov (United States)

Dunkelberger, Adam D.; Ellis, Chase T.; Ratchford, Daniel C.; Giles, Alexander J.; Kim, Mijin; Kim, Chul Soo; Spann, Bryan T.; Vurgaftman, Igor; Tischler, Joseph G.; Long, James P.; Glembocki, Orest J.; Owrutsky, Jeffrey C.; Caldwell, Joshua D.

2018-01-01

Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor nanoresonators are narrow, but that linewidth and the limited extent of the Reststrahlen band limit spectral coverage. To address this limitation, we report active tuning of SPhP resonances in InP and 4H-SiC by photoinjecting free carriers into nanoresonators, taking advantage of the coupling between the carrier plasma and optic phonons to blueshift SPhP resonances. We demonstrate state-of-the-art tuning figures of merit upon continuous-wave excitation (in InP) or pulsed excitation (in 4H-SiC). Lifetime effects cause the tuning to saturate in InP, and carrier redistribution leads to rapid (electronic and phononic excitations.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Science.gov (United States)

Sangeetha, P.; Jeganathan, K.; Ramakrishnan, V.

2013-06-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm-1 respectively and E2 (high) phonon mode of GaN shell at 573 cm-1. The free carrier concentration of InN core is found to be low in the order ˜ 1016 cm-3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ˜15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ˜0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high) phonon mode of GaN shell at 573 cm-1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111 substrate

Directory of Open Access Journals (Sweden)

P. Sangeetha

2013-06-01

Full Text Available The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE on Si (111 substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high and A1 (LO phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is found to be low in the order ∼ 1016 cm−3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high phonon mode of GaN shell at 573 cm−1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

International Nuclear Information System (INIS)

Sangeetha, P.; Ramakrishnan, V.; Jeganathan, K.

2013-01-01

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E 2 (high) and A 1 (LO) phonon mode of InN core at 490 and 590 cm −1 respectively and E 2 (high) phonon mode of GaN shell at 573 cm −1 . The free carrier concentration of InN core is found to be low in the order ∼ 10 16 cm −3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E 2 (high) phonon mode of GaN shell at 573 cm −1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus.

Science.gov (United States)

Ling, Xi; Huang, Shengxi; Hasdeo, Eddwi H; Liang, Liangbo; Parkin, William M; Tatsumi, Yuki; Nugraha, Ahmad R T; Puretzky, Alexander A; Das, Paul Masih; Sumpter, Bobby G; Geohegan, David B; Kong, Jing; Saito, Riichiro; Drndic, Marija; Meunier, Vincent; Dresselhaus, Mildred S

2016-04-13

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect of anisotropy has remained unsatisfactory to date, as shown by a number of inconsistencies in the recent literature. We use angle-resolved absorption and Raman spectroscopies to investigate the role of anisotropy on the electron-photon and electron-phonon interactions in BP. We highlight, both experimentally and theoretically, a nontrivial dependence between anisotropy and flake thickness and photon and phonon energies. We show that once understood, the anisotropic optical absorption appears to be a reliable and simple way to identify the crystalline orientation of BP, which cannot be determined from Raman spectroscopy without the explicit consideration of excitation wavelength and flake thickness, as commonly used previously.

Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Khurgin, Jacob B., E-mail: jakek@jhu.edu [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Bajaj, Sanyam; Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-12-28

Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

Phonon and thermal properties of exfoliated TaSe{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, Z.; Jiang, C.; Renteria, J. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Tsang, C. F.; Stickney, J. L.; Salguero, T. T., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: salguero@uga.edu, E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States)

2013-11-28

We report on the phonon and thermal properties of thin films of tantalum diselenide (2H-TaSe{sub 2}) obtained via the “graphene-like” mechanical exfoliation of crystals grown by chemical vapor transport. The ratio of the intensities of the Raman peak from the Si substrate and the E{sub 2g} peak of TaSe{sub 2} presents a convenient metric for quantifying film thickness. The temperature coefficients for two main Raman peaks, A{sub 1g} and E{sub 2g}, are −0.013 and −0.0097 cm{sup −1}/{sup o}C, respectively. The Raman optothermal measurements indicate that the room temperature thermal conductivity in these films decreases from its bulk value of ∼16 W/mK to ∼9 W/mK in 45-nm thick films. The measurement of electrical resistivity of the field-effect devices with TaSe{sub 2} channels shows that heat conduction is dominated by acoustic phonons in these van der Waals films. The scaling of thermal conductivity with the film thickness suggests that the phonon scattering from the film boundaries is substantial despite the sharp interfaces of the mechanically cleaved samples. These results are important for understanding the thermal properties of thin films exfoliated from TaSe{sub 2} and other metal dichalcogenides, as well as for evaluating self-heating effects in devices made from such materials.

Temperature dependence of low-frequency polarized Raman scattering spectra in TlInS{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Paucar, Raul; Wakita, Kazuki [Electronics and Computer Engineering, Chiba Institute of Technology, Chiba (Japan); Shim, YongGu; Mimura, Kojiro [Graduate School of Engineering, Osaka Prefecture University, Osaka (Japan); Alekperov, Oktay; Mamedov, Nazim [Institute of Physics, Azerbaijan National Academy of Sciences, Baku (Azerbaijan)

2017-06-15

In this work, we examined phase transitions in the layered ternary thallium chalcogenide TlInS{sub 2} by studying the temperature dependence of polarized Raman spectra with the aid of the Raman confocal microscope system. The Raman spectra were measured over the temperature range of 77-320 K (which includes the range of successive phase transitions) in the low-frequency region of 35-180 cm{sup -1}. The optical phonons that showed strong temperature dependence were identified as interlayer vibrations related to phase transitions, while the phonons that showed weak temperature dependence were identified as intralayer vibrations. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Manipulation of Squeezed Two-Phonon Bound States using Femtosecond Laser Pulses

Directory of Open Access Journals (Sweden)

Nakamura Kazutaka G.

2013-03-01

Full Text Available Two-phonon bound states have been excited exclusively in ZnTe(110 via impulsive stimulated second-order Raman scattering, essentially being squeezed states due to phase coherent excitation of two identical components anticorrelated in the wave vector. By using coherent control technique with a pair of femtosecond laser pulses, the manipulation of squeezed states has been demonstrated in which both the amplitude and lifetime of coherent oscillations of squeezed states are modulated, indicating the feasibility to control the quantum noise and the quantum nature of phonon squeezed states, respectively.

Optical phonons in PbTe/CdTe multilayer heterostructures

Energy Technology Data Exchange (ETDEWEB)

Novikova, N. N.; Yakovlev, V. A. [Russian Academy of Sciences, Institute for Spectroscopy (Russian Federation); Kucherenko, I. V., E-mail: kucheren@sci.lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Karczewski, G. [Polish Academy of Sciences, Institute of Physics (Poland); Aleshchenko, Yu. A.; Muratov, A. V.; Zavaritskaya, T. N.; Melnik, N. N. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation)

2015-05-15

The infrared reflection spectra of PbTe/CdTe multilayer nanostructures grown by molecular-beam epitaxy are measured in the frequency range of 20–5000 cm{sup −1} at room temperature. The thicknesses and high-frequency dielectric constants of the PbTe and CdTe layers and the frequencies of the transverse optical (TO) phonons in these structures are determined from dispersion analysis of the spectra. It is found that the samples under study are characterized by two TO phonon frequencies, equal to 28 and 47 cm{sup −1}. The first frequency is close to that of TO phonons in bulk PbTe, and the second is assigned to the optical mode in structurally distorted interface layers. The Raman-scattering spectra upon excitation with the radiation of an Ar{sup +} laser at 514.5 nm are measured at room and liquid-nitrogen temperatures. The weak line at 106 cm{sup −1} observed in these spectra is attributed to longitudinal optical phonons in the interface layers.

Phonon Spectrum in Hydroxyapatite: Calculations and EPR Study at Low Temperatures

Science.gov (United States)

Biktagirov, Timur; Gafurov, Marat; Iskhakova, Kamila; Mamin, Georgy; Orlinskii, Sergei

2016-12-01

Density functional theory-based calculations within the framework of the plane-wave pseudopotential approach are carried out to define the phonon spectrum of hydroxyapatite Ca_{10}(PO4)6(OH)2 (HAp). It allows to describe the temperature dependence of the electronic spin-lattice relaxation time T_{1e} of the radiation-induced stable radical NO3^{2-} in HAp, which was measured in X-band (9 GHz, magnetic field strength of 0.34 T) in the temperature range T = (10-300) K. It is shown that the temperature behavior of T_{1e} at T> 20 K can be fitted via two-phonon Raman type processes with the Debye temperature Θ D ≈ 280 {K} evaluated from the phonon spectrum.

Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering

KAUST Repository

Liu, Hsiang Lin; Guo, Huaihong; Yang, Teng; Zhang, Zhidong; Kumamoto, Yasuaki; Shen, Chih Chiang; Hsu, Yu Te; Li, Lain-Jong; Saito, Riichiro; Kawata, Satoshi

2015-01-01

We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.

Identification of Raman peaks of high-T{sub c} cuprates in normal state through density of states

Energy Technology Data Exchange (ETDEWEB)

Bishoyi, K.C. [P.G. Department of Physics, F.M. College (Auto.), Balasore 756 001 (India)]. E-mail: bishoyi@iopb.res.in; Rout, G.C. [Condensed Matter Physics Group, Govt. Science College, Chatrapur 761 020, Orissa (India); Behera, S.N. [Physics Enclave, H.I.G.-23/1, Housing Board Phase-I, Chandrasekharpur, Bhubaneswar 7510016 (India)

2007-05-31

We present a microscopic theory to explain and identify the Raman spectral peaks of high-T{sub c} cuprates R{sub 2-x}M{sub x}CuO{sub 4} in the normal state. We used electronic Hamiltonian prescribed by Fulde in presence of anti-ferromagnetism. Phonon interaction to the hybridization between the conduction electrons of the system and the f-electrons has been incorporated in the calculation. The phonon spectral density is calculated by the Green's function technique of Zubarev at zero wave vector and finite (room) temperature limit. The four Raman active peaks (P{sub 1}-P{sub 4}) representing the electronic states of the atomic sub-systems of the cuprate system are identified by the calculated quasi-particle energy bands and electron density of states (DOS). The effect of interactions on these peaks are also explained.

Raman scattering spectra of superconducting Bi2Sr2CaCu2O8 single crystals

International Nuclear Information System (INIS)

Kirillov, D.; Bozovic, I.; Geballe, T.H.; Kapitulnik, A.; Mitzi, D.B.

1988-01-01

Raman spectra of Bi 2 Sr 2 CaCu 2 O 8 single crystals with superconducting phase-transition temperature of 90 K have been studied. The spectra contained phonon lines and electronic continuum. Phonon energies and polarization selection rules were measured. A gap in the electronic continuum spectrum was observed in a superconducting state. Noticeable similarity between Raman spectra of Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 was found

Raman scattering spectra of superconducting Bi2Sr2CaCu2O8 single crystals

Science.gov (United States)

Kirillov, D.; Bozovic, I.; Geballe, T. H.; Kapitulnik, A.; Mitzi, D. B.

1988-12-01

Raman spectra of Bi2Sr2CaCu2O8 single crystals with superconducting phase-transition temperature of 90 K have been studied. The spectra contained phonon lines and electronic continuum. Phonon energies and polarization selection rules were measured. A gap in the electronic continuum spectrum was observed in a superconducting state. Noticeable similarity between Raman spectra of Bi2Sr2CaCu2O8 and YBa2Cu3O7 was found.

Phonons: Theory and experiments II. Volume 2

International Nuclear Information System (INIS)

Bruesch, P.

1986-01-01

The present second volume titled as ''Phonons: Theory and Experiments II'', contains, a thorough study of experimental techniques and the interpretation of experimental results. This three-volume set tries to bridge the gap between theory and experiment, and is addressed to those working in both camps in the vast field of dynamical properties of solids. Topics presented in the second volume include; infrared-, Raman and Brillouin spectroscopy, interaction of X-rays with phonons, and inelastic neutron scattering. In addition an account is given of some other techniques, including ultrasonic methods, inelastic electron tunneling spectroscopy, point contact spectroscopy, and spectroscopy of surface phonons, thin films and adsorbates. Both experimental aspects and theoretical concepts necessary for the interpretation of experimental data are discussed. An attempt is made to present the descriptive as well as the analytical aspects of the topics. Simple models are often used to illustrate the basic concepts and more than 100 figures are included to illustrate both theoretical and experimental results. Many chapters contain a number of problems with hints and results giving additional information

Raman spectroscopy of lithographically defined graphene nanoribbons - influence of size and defects

Energy Technology Data Exchange (ETDEWEB)

Kampmann, Felix; Scheuschner, Nils [Institut fuer Festkoerperphysik, Technical University Berlin (Germany); Terres, Bernat; Stampfer, Christoph [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University (Germany); Peter Gruenberg Institute (PGI), Forschungszentrum Juelich (Germany); Joerger, Danny [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University (Germany); Maultzsch, Janina [Institut fuer Festkoerperphysik, Technical University Berlin (Germany); Lehrstuhl fuer Experimentalphysik, Department Physik, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erlangen (Germany)

2017-11-15

Graphene nanostructures are an important building block to make use of the properties of graphene for applications in integrated devices. It is important to study edge roughness and defects in such nanostructures for further device improvement as they become important when downscaling structures. Recent Raman studies focused mainly on the D mode to characterize the defects in graphene and graphene nanoribbons (GNR) whereas not much attention has been paid to the D' mode that is smaller in Raman intensity. In this work we show by comparison with AFM measurements of the GNR width that both defect-induced Raman modes have different scattering length scales. Furthermore the size and quality of lithographically defined GNRs can be estimated by a close analysis of the defect-induced Raman modes and the width of the well-studied 2D mode of graphene. The findings are explained by the different vibration pattern for both Raman modes and the differences in the matrix elements determining the Raman intensity, i.e. the electron-phonon coupling and the phonon density of states. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Raman spectroscopy of lithographically defined graphene nanoribbons - influence of size and defects

International Nuclear Information System (INIS)

Kampmann, Felix; Scheuschner, Nils; Terres, Bernat; Stampfer, Christoph; Joerger, Danny; Maultzsch, Janina

2017-01-01

Graphene nanostructures are an important building block to make use of the properties of graphene for applications in integrated devices. It is important to study edge roughness and defects in such nanostructures for further device improvement as they become important when downscaling structures. Recent Raman studies focused mainly on the D mode to characterize the defects in graphene and graphene nanoribbons (GNR) whereas not much attention has been paid to the D' mode that is smaller in Raman intensity. In this work we show by comparison with AFM measurements of the GNR width that both defect-induced Raman modes have different scattering length scales. Furthermore the size and quality of lithographically defined GNRs can be estimated by a close analysis of the defect-induced Raman modes and the width of the well-studied 2D mode of graphene. The findings are explained by the different vibration pattern for both Raman modes and the differences in the matrix elements determining the Raman intensity, i.e. the electron-phonon coupling and the phonon density of states. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Energy Technology Data Exchange (ETDEWEB)

Sangeetha, P.; Ramakrishnan, V. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625 021 (India); Jeganathan, K. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024 (India)

2013-06-15

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E{sub 2} (high) and A{sub 1} (LO) phonon mode of InN core at 490 and 590 cm{sup -1} respectively and E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1}. The free carrier concentration of InN core is found to be low in the order {approx} 10{sup 16} cm{sup -3} due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of {approx}15 nm. The phonon-life time of core-shell nanowire structure is estimated to be {approx}0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1} as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

Phononic fluidics: acoustically activated droplet manipulations

Science.gov (United States)

Reboud, Julien; Wilson, Rab; Bourquin, Yannyk; Zhang, Yi; Neale, Steven L.; Cooper, Jonathan M.

2011-02-01

Microfluidic systems have faced challenges in handling real samples and the chip interconnection to other instruments. Here we present a simple interface, where surface acoustic waves (SAWs) from a piezoelectric device are coupled into a disposable acoustically responsive microfluidic chip. By manipulating droplets, SAW technologies have already shown their potential in microfluidics, but it has been limited by the need to rely upon mixed signal generation at multiple interdigitated electrode transducers (IDTs) and the problematic resulting reflections, to allow complex fluid operations. Here, a silicon chip was patterned with phononic structures, engineering the acoustic field by using a full band-gap. It was simply coupled to a piezoelectric LiNbO3 wafer, propagating the SAW, via a thin film of water. Contrary to the use of unstructured superstrates, phononic metamaterials allowed precise spatial control of the acoustic energy and hence its interaction with the liquids placed on the surface of the chip, as demonstrated by simulations. We further show that the acoustic frequency influences the interaction between the SAW and the phononic lattice, providing a route to programme complex fluidic manipulation onto the disposable chip. The centrifugation of cells from a blood sample is presented as a more practical demonstration of the potential of phononic crystals to realize diagnostic systems.

Raman scattering study of the anharmonic effects in CeO{sub 2-y} nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Popovic, Z V [Center for Solid State Physics and New Materials, Institute of Physics, Pregrevica 118, 11080 Belgrade (Serbia); Dohcevic-Mitrovic, Z [Center for Solid State Physics and New Materials, Institute of Physics, Pregrevica 118, 11080 Belgrade (Serbia); Cros, A [Materials Science Institute, University of Valencia, P O Box 22085, E-46071, Valencia (Spain); Cantarero, A [Materials Science Institute, University of Valencia, P O Box 22085, E-46071, Valencia (Spain)

2007-12-12

We have studied the temperature dependence of the F{sub 2g} Raman mode phonon frequency and broadening in CeO{sub 2-y} nanocrystals. The phonon softening and phonon linewidth are calculated using a model which takes into account the three-and four-phonon anharmonic processes. A detailed comparison of the experimental data with theoretical calculations revealed the predominance of four-phonon anharmonic processes in the temperature dependence of the phonon energy and broadening of the nanocrystals. On the other hand, three-phonon processes dominate the temperature behavior of phonons in polycrystalline samples. The anti-Stokes/Stokes peak intensity ratio was also investigated and found to be smaller for nanosized CeO{sub 2} powders than in the bulk counterpart.

Spin transitions in La{sub 0.7} Ba{sub 0.3}CoO{sub 3} thin films revealed by combining Raman spectroscopy and X-ray diffraction

Energy Technology Data Exchange (ETDEWEB)

Othmen, Zied; Oueslati, Meherzi [Unité Nanomatériaux et Photonique, Faculty of Sciences of Tunis, Tunis El-Manar University, 2092 Tunis (Tunisia); Copie, Olivier; Gemeiner, Pascale; Dkhil, Brahim [Laboratoire Structures, Propriétés et Modélisation des Solides, Centrale Supélec, CNRS-UMR 8580, Université Paris-Saclay (France); Daoudi, Kais [Unité Nanomatériaux et Photonique, Faculty of Sciences of Tunis, Tunis El-Manar University, 2092 Tunis (Tunisia); Department of Applied Physics and Astronomy, College of Sciences, University of Sharjah, P.O. Box 27272, Sharjah (United Arab Emirates); Boudard, Michel [Univ. Grenoble Alpes, LMGP, F-38000 Grenoble (France)

2016-07-07

In cobaltite, the spin states transitions of Co{sup 3+/4+} ions govern the magnetic and electronic conduction properties. These transitions are strain-sensitive and can be varied using external parameters, including temperature, hydrostatic pressure, or chemical stresses through ionic substitutions. In this work, using temperature dependent Raman spectroscopy and X-ray diffraction, the epitaxial strain effects on both structural and vibrational properties of La{sub 0.7} Ba{sub 0.3} CoO{sub 3} (LBCO) cobaltite thin films are investigated. All Raman active phonon modes as well as the structure are found to be strongly affected. Both Raman modes and lattice parameter evolutions show temperature changes correlated with magnetic and electronic transitions properties. Combining Raman spectroscopy and X-ray diffraction appears as a powerful approach to probe the spin transition in thin film cobaltite. Our results provide insight into strong spin-charge-phonon coupling in LBCO thin film. This coupling manifests as vibrational transition with temperature in the Raman spectra near the ferromagnetic spin ordered transition at 220 K.

Study of vibrational and magnetic excitations in NicMg1-cO solid solutions by Raman spectroscopy

International Nuclear Information System (INIS)

Cazzanelli, E; Kuzmin, A; Mariotto, G; Mironova-Ulmane, N

2003-01-01

The Raman scattering by phonons and magnons was studied for the first time in the polycrystalline solid solutions Ni c Mg 1-c O. The experimental Raman spectrum for c = 0.9 is similar to that of NiO and consists of six well resolved bands, whose origins are the disorder-induced one-phonon scattering (bands at 400 and 500 cm -1 ), two-phonon scattering (bands at 750, 900, and 1100 cm -1 ), and two-magnon scattering (the broad band at ∼ 1400 cm -1 ). We found that the dependence of the two-magnon band in solid solutions on the composition and temperature is consistent with their magnetic phase diagram. We also observed that the relative contribution of two-phonon scattering decreases strongly upon dilution with magnesium ions and disappears completely at c < 0.5. Such behaviour is explained in terms of a disorder-induced effect, which increases the probability of the one-phonon scattering processes

Resonance Raman Optical Activity and Surface Enhanced Resonance Raman Optical Activity analysis of Cytochrome C

DEFF Research Database (Denmark)

Johannessen, Christian; Abdali, Salim; White, Peter C.

2007-01-01

High quality Resonance Raman (RR) and resonance Raman Optical Activity (ROA) spectra of cytochrome c were obtained in order to perform full assignment of spectral features of the resonance ROA spectrum. The resonance ROA spectrum of cytochrome c revealed a distinct spectral signature pattern due...... to resonance enhanced skeletal porphyrin vibrations, more pronounced than any contribution from the protein back-bone. Combining the intrinsic resonance enhancement of cytochrome c with surface plasmon enhancement by colloidal silver particles, the Surface Enhanced Resonance Raman Scattering (SERRS) and Chiral...... Enhanced Raman Spectroscopy (ChERS) spectra of the protein were successfully obtained at very low concentration (as low as 1 µM). The assignment of spectral features was based on the information obtained from the RR and resonance ROA spectra. Excellent agreement between RR and SERRS spectra is reported...

Dephasing of LO-phonon-plasmon hybrid modes in n-type GaAs

Science.gov (United States)

Vallée, F.; Ganikhanov, F.; Bogani, F.

1997-11-01

The relaxation dynamics of coherent phononlike LO-phonon-plasmon hybrid modes is investigated in n-doped GaAs using an infrared time-resolved coherent anti-Stokes Raman scattering technique. Measurements performed for different crystal temperatures in the range 10-300 K as a function of the electron density injected by doping show a large reduction of the hybrid mode dephasing time compared to the bare LO-phonon one for densities larger than 1016 cm-3. The results are interpreted in terms of coherent decay of the LO-phonon-plasmon mixed mode in the weak-coupling regime and yield information on the plasmon and electron relaxation. The estimated average electron momentum relaxation times are smaller than those deduced from Hall mobility measurements, as expected from our theoretical model.

Phonon engineering for nanostructures.

Energy Technology Data Exchange (ETDEWEB)

Aubry, Sylvie (Stanford University); Friedmann, Thomas Aquinas; Sullivan, John Patrick; Peebles, Diane Elaine; Hurley, David H. (Idaho National Laboratory); Shinde, Subhash L.; Piekos, Edward Stanley; Emerson, John Allen

2010-01-01

Understanding the physics of phonon transport at small length scales is increasingly important for basic research in nanoelectronics, optoelectronics, nanomechanics, and thermoelectrics. We conducted several studies to develop an understanding of phonon behavior in very small structures. This report describes the modeling, experimental, and fabrication activities used to explore phonon transport across and along material interfaces and through nanopatterned structures. Toward the understanding of phonon transport across interfaces, we computed the Kapitza conductance for {Sigma}29(001) and {Sigma}3(111) interfaces in silicon, fabricated the interfaces in single-crystal silicon substrates, and used picosecond laser pulses to image the thermal waves crossing the interfaces. Toward the understanding of phonon transport along interfaces, we designed and fabricated a unique differential test structure that can measure the proportion of specular to diffuse thermal phonon scattering from silicon surfaces. Phonon-scale simulation of the test ligaments, as well as continuum scale modeling of the complete experiment, confirmed its sensitivity to surface scattering. To further our understanding of phonon transport through nanostructures, we fabricated microscale-patterned structures in diamond thin films.

The negative phonon confinement effect in nanoscopic sodium nitrite

Czech Academy of Sciences Publication Activity Database

Koroleva, E.Yu.; Nuzhnyy, Dmitry; Pokorný, Jan; Kamba, Stanislav; Kumzerov, Y. A.; Vakhrushev, S. B.; Petzelt, Jan

2009-01-01

Roč. 20, č. 39 (2009), 395706/1-395706/7 ISSN 0957-4484 R&D Projects: GA AV ČR KJB100100704; GA ČR(CZ) GA202/09/0682 Institutional research plan: CEZ:AV0Z10100520 Keywords : nanocomposite * sodium nitrite * infrared * THz * Raman * phonon * effective medium approach Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.137, year: 2009

Molecular Solid EOS based on Quasi-Harmonic Oscillator approximation for phonons

Energy Technology Data Exchange (ETDEWEB)

Menikoff, Ralph [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2014-09-02

A complete equation of state (EOS) for a molecular solid is derived utilizing a Helmholtz free energy. Assuming that the solid is nonconducting, phonon excitations dominate the specific heat. Phonons are approximated as independent quasi-harmonic oscillators with vibrational frequencies depending on the specific volume. The model is suitable for calibrating an EOS based on isothermal compression data and infrared/Raman spectroscopy data from high pressure measurements utilizing a diamond anvil cell. In contrast to a Mie-Gruneisen EOS developed for an atomic solid, the specific heat and Gruneisen coefficient depend on both density and temperature.

Raman scattering of quasimodes in ZnO

International Nuclear Information System (INIS)

Alarcon-Llado, E; Cusco, R; Artus, L; Jimenez, J; Wang, B; Callahan, M

2008-01-01

The angular dependence of the optical phonons of high-quality bulk ZnO has been systematically studied by means of Raman scattering. We report the observation of quasi-TO and quasi-LO modes for propagation directions covering the whole a-c mixing plane using a beveled ZnO single crystal sample. Scattering experiments performed in two different configuration geometries indicate that birefringence effects are not relevant for the phonon analysis in this material. The observed angular dependence of the quasimode frequencies is in good agreement with Loudon's model.

Quantum random bit generation using energy fluctuations in stimulated Raman scattering.

Science.gov (United States)

Bustard, Philip J; England, Duncan G; Nunn, Josh; Moffatt, Doug; Spanner, Michael; Lausten, Rune; Sussman, Benjamin J

2013-12-02

Random number sequences are a critical resource in modern information processing systems, with applications in cryptography, numerical simulation, and data sampling. We introduce a quantum random number generator based on the measurement of pulse energy quantum fluctuations in Stokes light generated by spontaneously-initiated stimulated Raman scattering. Bright Stokes pulse energy fluctuations up to five times the mean energy are measured with fast photodiodes and converted to unbiased random binary strings. Since the pulse energy is a continuous variable, multiple bits can be extracted from a single measurement. Our approach can be generalized to a wide range of Raman active materials; here we demonstrate a prototype using the optical phonon line in bulk diamond.

Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

KAUST Repository

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Anjum, Dalaver H.; Prabaswara, Aditya; Yang, Yang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2016-01-01

SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe

Phonons, defects and optical damage in crystalline acetanilide

Science.gov (United States)

Kosic, Thomas J.; Hill, Jeffrey R.; Dlott, Dana D.

1986-04-01

Intense picosecond pulses cause accumulated optical damage in acetanilide crystals at low temperature. Catastrophic damage to the irradiated volume occurs after an incubation period where defects accumulate. The optical damage is monitored with subanosecond time resolution. The generation of defects is studied with damage-detected picosecond spectroscopy. The accumulation of defects is studied by time-resolved coherent Raman scattering, which is used to measure optical phonon scattering from the accumulating defects.

Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Oeztuerk, N.; Bahceli, S.

2010-01-01

InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

Temperature dependence Infrared and Raman studies of III-V/II-VI core-shell nanostructures

Science.gov (United States)

Manciu, Felicia S.; McCombe, Bruce D.; Lucey, Derrick

2005-03-01

The temperature dependence (8 K InP/ZnS sample. Raman scattering (457.9 nm excitation) features were determined without polarization selection in the backscattering geometry. Interesting T-dependent resonant Raman effect of the surface optical phonon modes has been discovered in InP/ZnSe sample. Reasonable agreement is obtained between the Raman and FIR results, as well as with theoretical calculations.

Raman investigation of GaP–Si interfaces grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Bondi, A.; Cornet, C.; Boyer, S.; Nguyen Thanh, T.; Létoublon, A.; Pedesseau, L.; Durand, O. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR-CNRS n°6251, Université Rennes1, Campus de Beaulieu — 35042 Rennes cedex (France); Ponchet, A. [CEMES, UPR CNRS 8011, F-31055 Toulouse (France); Le Corre, A. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Even, J., E-mail: jacky.even@insa.rennes.fr [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France)

2013-08-31

Raman spectroscopy was used to investigate the residual strain in thin GaP layers deposited on Si substrates by molecular beam epitaxy. Different growth conditions were used to obtain a clean GaP–Si interface, including migration enhanced epitaxy. The strain induced Raman shifts of the longitudinal and the transverse optical GaP lattice modes were analyzed. The effects of crystalline defects are discussed, supported by high resolution transmission electron microscopy and X-ray scattering studies. Finally, Raman Spectroscopy reveals the presence of disorder (or surface)-activated optical phonons. This result is discussed in the light of surface morphology analyses. - Highlights: ► GaP thin layers grown by molecular beam epitaxy on Si substrates. ► Strain-induced Raman shifts of the optical GaP modes are analyzed. ► Simulation of optical GaP modes by density functional perturbation theory. ► Comparison with X-ray diffraction and electron and scanning probe microscopy data.

In rich In{sub 1-x}Ga{sub x}N: Composition dependence of longitudinal optical phonon energy

Energy Technology Data Exchange (ETDEWEB)

Tiras, E. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ Colchester (United Kingdom); Faculty of Science, Department of Physics, Anadolu University, Yunus Emre Campus, 26470 Eskisehir (Turkey); Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ Colchester (United Kingdom); Schaff, W.J. [Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)

2010-01-15

The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg-doped In{sub 1-x}Ga{sub x}N samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In{sub 1-x}Ga{sub x}N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Phonon spectra in SiO2 glasses

International Nuclear Information System (INIS)

Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.

1999-01-01

Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)

Transport properties and Raman spectra of impurity substituted MgB2

International Nuclear Information System (INIS)

Masui, T.

2007-01-01

Recent advances in the study of MgB 2 are reviewed, with focus on the transport properties and Raman scattering measurements for impurity substituted crystals. Carbon and Aluminium substitution change band filling, introduce intraband and interband scattering. These effects are seen in the temperature dependence of resistivity, Hall coefficients, and phonon peak of Raman spectra. Manganese substitution introduces magnetic scattering, that increases resistivity but gives little change in Raman spectra. The effect of disorder in neutron irradiated samples is also discussed

The disorder-induced Raman scattering in Au/MoS{sub 2} heterostructures

Energy Technology Data Exchange (ETDEWEB)

Gołasa, K., E-mail: Katarzyna.Golasa@fuw.edu.pl; Grzeszczyk, M.; Binder, J.; Bożek, R.; Wysmołek, A.; Babiński, A. [Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warszawa (Poland)

2015-07-15

The Raman scattering has been studied in heterostructures composed of a thin MoS{sub 2} flake and a 1-1.5 nm layer of thermally evaporated gold (Au). There have been Au nanoislands detected in the heterostructure. It has been found that their surface density and the average size depend on the MoS{sub 2} thickness. The Raman scattering spectrum in the heterostructure with a few monolayer MoS{sub 2} only weakly depends on the excitation (resonant vs. non-resonant) mode. The overall Raman spectrum corresponds to the total density of phonon states, which is characteristic for disordered systems. The disorder in the MoS{sub 2} layer is related to the mechanical strain induced in the MoS{sub 2} layer by the Au nanoislands. The strain results in the localization of phonon modes, which leads to the relaxation of the momentum conservation rule in the scattering process. The relaxation allows phonons from the whole MoS{sub 2} Brillouin zone to interact with electronic excitations. Our results show that the Au nanoislands resulted from thermal evaporation of a thin metal layer introduce substantial disorder into the crystalline structure of the thin MoS{sub 2} layers.

Creation of high-energy phonons by four-phonon processes in anisotropic phonon system of He II

International Nuclear Information System (INIS)

Adamenko, I.N.; Nemchenko, K.E.; Slipko, V.A.; Kitsenko, Yu.A.; Wyatt, A.F.G.

2007-01-01

The problem of the creation of high-energy phonons (h-phonons) by a pulse of low-energy phonons (I-phonons) moving from a heater to a detector in superfluid helium, is solved. The rate of h-phonon creation is obtained and it is shown that created h-phonons occupy a much smaller solid angle in momentum space, than the I-phonons. Analytical expression for the creation rate of h-phonon, along the symmetry axis of a pulse, are derived. It allows us to get useful approximate analytical expressions for creation rate of h-phonons. The time dependences of the parameters which describe the I-phonon pulse are obtained. This shows that half of the initial energy of I-phonon pulse can be transferred into h-phonons. The results of the calculations are compared with experimental data and we show that this theory explains a number of experimental results. The value of the momentum, which separates the I- and h-phonon subsystems, is found

Raman scattering in GaN, AlN and AlGaN. Basic material properties, processing and devices

International Nuclear Information System (INIS)

Hayes, J.M.

2002-05-01

GaN, AIN and AIGaN are very promising materials for high-power, high-temperature and high-frequency electronic device applications but many of their material properties and the effects of processing steps for device fabrication have not yet been fully investigated. AIGaN/GaN films were annealed at temperatures of 800 to 1300 deg C in different ambient atmospheres. The films were then analysed by micro-Raman spectroscopy. Compressive stress was found in films annealed in oxygen containing atmospheres which was significantly enhanced by the presence of water vapour in the annealing atmosphere. No stress was detected after annealing in nitrogen even at temperatures close to the thermal decomposition temperature and in the presence of water vapour. Thermal decomposition can be prevented by the use of high-pressure atmospheres during annealing. Mg/P implanted and non-implanted GaN films annealed at temperatures up to 1500 deg C with nitrogen over-pressures of 1-1.5 GPa were analysed by micro-Raman spectroscopy. Annealing temperatures of 1400-1500 deg C resulted in the nearly full recovery of the crystalline quality of the ion-implanted GaN. Ultraviolet Raman spectroscopy showed that no significant surface degradation occurred during the annealing. High-quality bulk AIN crystals were studied by micro-Raman spectroscopy. The pressure dependence of the phonon frequencies was measured in the range 0 GPa to 9.5 GPa determining the mode-Grueneisen parameters. The temperature dependence of the phonon frequencies and lifetimes was measured from 10 K to 1275 K. Empirical fitting and theoretical modelling of the temperature dependence was performed. The results have application for the monitoring of temperature in (Ga/AI)N. The E 2 (high) phonon frequency of GaN measured by micro-Raman spectroscopy was used to monitor local temperatures in active AIGaN/GaN hetero-structure field effect transistor devices (HFETs). The temperature rise in the active area of devices on sapphire

Raman study of InAs/InP quantum wires

Science.gov (United States)

Angelova, T.; Cros, A.; Cantarero, A.; Fuster, D.; González, Y.; González, L.

2007-04-01

We present a Raman study of the vibrational modes in InAs/InP (001) quantum wires. The energy of the observed phonon modes evidences the confinement properties of the wires, their strain anisotropy and the effect of atomic intermixing. Resonance effects in confined and interface phonons are discussed for excitation in the vicinity of the E1 critical point. The observed vibrations and their variation with sample characteristics are in agreement with the conclusions of previous structural and optical characterization performed in the same samples.

Two-phonon absorption spectra in CuInSe2

International Nuclear Information System (INIS)

Sobotta, H.; Neumann, H.; Kissinger, W.; Riede, V.; Kuehn, G.

1981-01-01

An attempt was made to measure and to analyse phonon combination mode spectra of CuInSe 2 and in this way to determine the phonon mode frequencies unknown so far. Considering the absorption coefficient spectra, there are to well-pronounced peaks at 405 and 428 cm -1 at room temperature which are shifted to 412 and 433 cm -1 , respectively, at 105 K. Accounting for the fact that the absorption peaks at 405 and 428 cm -1 show the same temperature shift, it seems to be not unreasonable to assume that all the phonon modes participating in these absorption processes are characterized by the same temperature dependence of the mode frequencies. The corresponding mode Grueneisen parameters have been estimated using the thermal expansion coefficients for CuInSe 2 . Values of 1.7 to 2.0 were obtained being nearly of the same magnitude as the values of the high-energy zone-center modes in CuAlS 2 and CuGaS 2 derived from high-pressure Raman scattering studies

Raman spectroscopy of in situ annealed InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Luna, M.J.M. de; Somintac, A.; Estacio, E.; Salvador, A.

2004-01-01

Nonresonant Raman scattering measurements were performed on a three-layered sample of in situ annealed InAs/GaAs self-assembled quantum dots. The thermal annealing step was done during the growth of each GaAs spacer layer, where the substrate temperature was raised from 530 deg. C to 580 deg. C as measured by a pyrometer. Three Raman signals are clearly seen at 264 cm -1 , 268 cm -1 , and 271.5 cm -1 which can be attributed to the longitudinal optic (LO) phonons of the dots. These three different signals are attributed to different degrees of In/Ga alloying or intermixing in each dot layer as a consequence of the different thermal treatments that each layer was subjected to. The Raman signal of the wetting layer (WL) is remarkably weak and suggests erosion of the wetting layer. In contrast, Raman scattering measurements on an unannealed sample show two overlapping features at 259.5 cm -1 and 261.5 cm -1 , which are attributed to the LO phonons of the dots. The WL signal is clearly observed at 251.5 cm -1 . To support our Raman observations, the appearance of a strong higher-energy peak in photoluminescence measurements suggests that alloying did occur in the annealed sample

DFT-Assisted Polymorph Identification from Lattice Raman Fingerprinting.

Science.gov (United States)

Bedoya-Martínez, Natalia; Schrode, Benedikt; Jones, Andrew O F; Salzillo, Tommaso; Ruzié, Christian; Demitri, Nicola; Geerts, Yves H; Venuti, Elisabetta; Della Valle, Raffaele Guido; Zojer, Egbert; Resel, Roland

2017-08-03

A combined experimental and theoretical approach, consisting of lattice phonon Raman spectroscopy and density functional theory (DFT) calculations, is proposed as a tool for lattice dynamics characterization and polymorph phase identification. To illustrate the reliability of the method, the lattice phonon Raman spectra of two polymorphs of the molecule 2,7-dioctyloxy[1]benzothieno[3,2-b]benzothiophene are investigated. We show that DFT calculations of the lattice vibrations based on the known crystal structures, including many-body dispersion van der Waals (MBD-vdW) corrections, predict experimental data within an accuracy of ≪5 cm -1 (≪0.6 meV). Due to the high accuracy of the simulations, they can be used to unambiguously identify different polymorphs and to characterize the nature of the lattice vibrations and their relationship to the structural properties. More generally, this work implies that DFT-MBD-vdW is a promising method to describe also other physical properties that depend on lattice dynamics like charge transport.

Raman scattering enhancement in photon-plasmon resonance mediated metal-dielectric microcavity

International Nuclear Information System (INIS)

Guddala, Sriram; Narayana Rao, D.; Dwivedi, Vindesh K.; Vijaya Prakash, G.

2013-01-01

Here, we report the photon-plasmon interaction scheme and enhanced field strengths resulted into the amplification of phonon in a novel microcavity. A metal-dielectric microcavity, with unified cavity photonic mode and localized surface plasmon resonances, is visualized by impregnating the gold nanoparticles into the deep see-through nano-sized pores of porous silicon microcavity. The intense optical field strengths resulting from the photon-plasmon interactions are probed by both resonant and non-resonant Raman scattering experiments. Due to photon-plasmon-phonon interaction mechanism, several orders of enhancement in the intensity of scattered Raman Stokes photon (at 500 cm −1 ) are observed. Our metal nanoparticle-microcavity hybrid system shows the potential to improve the sensing figure of merit as well as the applications of plasmonics for optoelectronics, photovoltaics, and related technologies

Evaluation of optoelectronic response and Raman active modes in Tb{sup 3+} and Eu{sup 3+}-doped gadolinium oxide (Gd{sub 2}O{sub 3}) nanoparticle systems

Energy Technology Data Exchange (ETDEWEB)

Paul, Nibedita [National Institute of Technology Nagaland, Department of Physics, Dimapur, Nagaland (India); Tezpur University, Department of Physics, Tezpur, Assam (India); Mohanta, D. [Tezpur University, Department of Physics, Tezpur, Assam (India)

2016-09-15

Rare earth oxide (Tb{sup 3+}:Gd{sub 2}O{sub 3} and Eu{sup 3+}:Gd{sub 2}O{sub 3}) nanophosphors are exploited through spectroscopic and microscopic tools with special emphasis on D-F mediated radiative emission and Raman active vibrational modes. Powder X-ray diffraction measurements have revealed cubic crystal structure of the nanosystems and with an average crystallite size varying between ∝3.2 and 4.8 nm. Photoluminescence (PL) spectra of Tb{sup 3+} doped systems signify intense blue-green (∝490 nm) and green (∝544 nm) emissions mediated by {sup 5}D{sub 4} → {sup 7}F{sub 6} and {sup 5}D{sub 4} → {sup 7}F{sub 5} transitional events; respectively. In the PL responses of Eu{sup 3+} doped nanoparticle systems, we also identify magnetically-driven {sup 5}D{sub 0} → {sup 7}F{sub 1} (∝591 nm) and electrically driven {sup 5}D{sub 0} → {sup 7}F{sub 2} (∝619 nm) radiative features which seem to improve with increasing doping level. However, the magnitude of Judd-Ofelt (J-O) intensity parameters (Ω {sub 2,} {sub 4}), is significantly lowered for the high doping cases. Raman spectra of the undoped and RE doped systems exhibited several A{sub g} and F{sub g} modes in the range of Raman shift ∝100-600 cm{sup -1}. In the Raman spectra, the peaks located at ∝355 cm{sup -1} are assigned to the mixed mode of F{sub g} + A{sub g}, the line width of which was found to increase with RE doping. Moreover, owing to the enhanced defect concentration in the doped systems than its undoped counterpart, we anticipate a faster phonon relaxation and consequently, a suppression of phonon lifetime in the former case. (orig.)

Temperature and polarization dependent Raman measurements of Ca{sub 2}RuO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

German, Raphael [II. Physikalisches Institut, Univ. Koeln (Germany)

2016-07-01

Ca{sub 2}RuO{sub 4} is a Mott-like insulator, which undergoes a metal-insulator transition at 357 K and antiferromagnetic ordering at T{sub N} = 110 K. Here, we report a temperature and polarization dependent Raman scattering study. Earlier studies claimed a Raman active two-magnon excitation around 100 cm{sup -1}. This, however, is incompatible with the results from recent inelastic neutron scattering measurements, which suggest that this mode might be of single magnon nature. Instead, it is more likely that the feature which appears at ∝ 650 cm{sup -1}, previously claimed to be due to a charge gap, has a two-magnon origin. Another open question in the interpretation of the Raman spectra is the origin of the high-energy peak at ∝1360 cm{sup -1}. We will discuss the origin of the Raman peaks in terms of one- and two-magnon processes; magnon-phonon coupling, and possible crystal field excitations.

Detection of biologically active diterpenoic acids by Raman Spectroscopy

DEFF Research Database (Denmark)

Talian, Ivan; Orinak, Andrej; Efremov, Evtim V.

2010-01-01

Three poorly detectable, biologically active diterpenoic acids, kaurenoic, abietic, and gibberellic acid, were studied by using different modes of Raman spectroscopy. Because of their structural similarities, in the absence of strongly polarizable groups, conventional Raman spectroscopy is not su......Three poorly detectable, biologically active diterpenoic acids, kaurenoic, abietic, and gibberellic acid, were studied by using different modes of Raman spectroscopy. Because of their structural similarities, in the absence of strongly polarizable groups, conventional Raman spectroscopy...... few enhanced Raman lines. SERS spectra with 514-nm excitation with Ag colloids were also relatively weak. The best SERS spectrawere obtained with 785-nm excitation on a novel nanostructured substrate, 'black silicon' coated with a 400-nm gold layer. The spectra showed clear differences...

Birefringent phononic structures

Directory of Open Access Journals (Sweden)

I. E. Psarobas

2014-12-01

Full Text Available Within the framework of elastic anisotropy, caused in a phononic crystal due to low crystallographic symmetry, we adopt a model structure, already introduced in the case of photonic metamaterials, and by analogy, we study the effect of birefringence and acoustical activity in a phononic crystal. In particular, we investigate its low-frequency behavior and comment on the factors which determine chirality by reference to this model.

Temperature Dependence of Polarized Low Wavenumber Raman Spectra of Aminopropylsilanetriol Polymer

International Nuclear Information System (INIS)

V, Volovsek; L, Bistrcic; K, Furic; V, Daanic; I, Movre Sapic

2006-01-01

Low wavenumber polarized Raman spectra of aminopropylsilanetriol (APST) polymer deposited on PVC substrate were measured in the temperature range from 300 K to 78 K. In the low wavenumber Raman spectra of these samples a very strong Bose band was observed. The best results in modeling the low wavenumber Raman spectra were achieved with the exponential correlation function of disorder G dis (ν) = exp(-r/R c )using three contributions: transversal and longitudinal acoustic phonons and molecular vibration. Results suggest medium range ordered ladder structure, stacked in layers with different orientations of ladders

Raman scattering in orthorhombic CuInS2 nanocrystals

International Nuclear Information System (INIS)

Dzhagan, V.M.; Valakh, M.Ya.; Litvinchuk, A.P.; Kruszynska, M.; Kolny-Olesiak, J.; Himcinschi, C.; Zahn, D.R.T.

2014-01-01

We report the results of non-resonant and resonant Raman scattering in orthorhombic nanocrystalline CuInS 2 semiconductor, supported by density functional first principle lattice dynamics calculations. A larger number of dominant phonon modes in comparison with standard tetragonal CuInS 2 phases is shown to be associated with peculiarities of cation sublattice ordering and is the ''fingerprint'' of the corresponding structural polymorph. Good overall agreement is found between theoretical and experimental phonon mode frequencies. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy

International Nuclear Information System (INIS)

Bruchhausen, A; Lanzillotti-Kimura, N D; Fainstein, A; Soukiassian, A; Tenne, D A; Schlom, D; Xi, X X; Cantarero, A

2007-01-01

We study high quality molecular-beam epitaxy grown BaTiO 3 /SrTiO 3 superlat-tices using ultraviolet Raman spectroscopy. In the low energy spectral region, acoustic phonon doublets are observed. These are due to the artificial superlattice periodicity and consequent folding of the acoustic phonon dispersion. From the study of samples with different BaTiO 3 /SrTiO 3 layer thicknesses the effective sound velocities within each of the layers are obtained

Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy

Science.gov (United States)

Bruchhausen, A.; Lanzillotti-Kimura, N. D.; Fainstein, A.; Soukiassian, A.; Tenne, D. A.; Schlom, D.; Xi, X. X.; Cantarero, A.

2007-12-01

We study high quality molecular-beam epitaxy grown BaTiO3/SrTiO3 superlat-tices using ultraviolet Raman spectroscopy. In the low energy spectral region, acoustic phonon doublets are observed. These are due to the artificial superlattice periodicity and consequent folding of the acoustic phonon dispersion. From the study of samples with different BaTiO3/SrTiO3 layer thicknesses the effective sound velocities within each of the layers are obtained.

Raman Optical Activity of Biological Molecules

Science.gov (United States)

Blanch, Ewan W.; Barron, Laurence D.

Now an incisive probe of biomolecular structure, Raman optical activity (ROA) measures a small difference in Raman scattering from chiral molecules in right- and left-circularly polarized light. As ROA spectra measure vibrational optical activity, they contain highly informative band structures sensitive to the secondary and tertiary structures of proteins, nucleic acids, viruses and carbohydrates as well as the absolute configurations of small molecules. In this review we present a survey of recent studies on biomolecular structure and dynamics using ROA and also a discussion of future applications of this powerful new technique in biomedical research.

Ion implantation effects in single crystal Si investigated by Raman spectroscopy

International Nuclear Information System (INIS)

Harriman, T.A.; Lucca, D.A.; Lee, J.-K.; Klopfstein, M.J.; Herrmann, K.; Nastasi, M.

2009-01-01

A study of the effects of Ar ion implantation on the structural transformation of single crystal Si investigated by confocal Raman spectroscopy is presented. Implantation was performed at 77 K using 150 keV Ar ++ with fluences ranging from 2 x 10 13 to 1 x 10 15 ions/cm 2 . The Raman spectra showed a progression from crystalline to highly disordered structure with increasing fluence. The 520 cm -1 c-Si peak was seen to decrease in intensity, broaden and exhibit spectral shifts indicating an increase in lattice disorder and changes in the residual stress state. In addition, an amorphous Si band first appeared as a shoulder on the 520 cm -1 peak and then shifted to lower wavenumbers as a single broadband peak with a spectral center of 465 cm -1 . Additionally, the emergence of the a-Si TA phonon band and the decrease of the c-Si 2TA and 2TO phonon bands also indicated the same structural transition from crystalline to highly disordered. The Raman results were compared to those obtained by channeling RBS.

Manipulation of Phonons with Phononic Crystals

Energy Technology Data Exchange (ETDEWEB)

Leseman, Zayd Chad [Univ. of New Mexico, Albuquerque, NM (United States)

2015-07-09

There were three research goals associated with this project. First, was to experimentally demonstrate phonon spectrum control at THz frequencies using Phononic Crystals (PnCs), i.e. demonstrate coherent phonon scattering with PnCs. Second, was to experimentally demonstrate analog PnC circuitry components at GHz frequencies. The final research goal was to gain a fundamental understanding of phonon interaction using computational methods. As a result of this work, 7 journal papers have been published, 1 patent awarded, 14 conference presentations given, 4 conference publications, and 2 poster presentations given.

Raman Spectroscopic Studies of YBa2Cu3O7 Coated Conductors

International Nuclear Information System (INIS)

Choi, Mi Kyeung; Mnh, Nguyen Van; Bae, J. S.; Jo, William; Yang, In Sang; Ko, Rock Kil; Ha, Hong Soo; Park, Chan

2005-01-01

We present results of Raman spectroscopic studies of superconducting YBa 2 Cu 3 O 7 (YBCO) coated conductors. Raman scattering is used to characterize optical phonon modes, oxygen content, c-axis misalignment, and second phases of the YBCO coated conductors at a micro scale. A two-dimensional mapping of Raman spectra with transport properties has been performed to elucidate the effect of local propertied on current path and superconducting phase. The information taken from the local measurement will be useful for optimizing the process condition.

Study of vibrational and magnetic excitations in Ni sub c Mg sub 1 sub - sub c O solid solutions by Raman spectroscopy

CERN Document Server

Cazzanelli, E; Mariotto, G; Mironova-Ulmane, N

2003-01-01

The Raman scattering by phonons and magnons was studied for the first time in the polycrystalline solid solutions Ni sub c Mg sub 1 sub - sub c O. The experimental Raman spectrum for c = 0.9 is similar to that of NiO and consists of six well resolved bands, whose origins are the disorder-induced one-phonon scattering (bands at 400 and 500 cm sup - sup 1), two-phonon scattering (bands at 750, 900, and 1100 cm sup - sup 1), and two-magnon scattering (the broad band at approx 1400 cm sup - sup 1). We found that the dependence of the two-magnon band in solid solutions on the composition and temperature is consistent with their magnetic phase diagram. We also observed that the relative contribution of two-phonon scattering decreases strongly upon dilution with magnesium ions and disappears completely at c < 0.5. Such behaviour is explained in terms of a disorder-induced effect, which increases the probability of the one-phonon scattering processes.

Flexural phonon limited phonon drag thermopower in bilayer graphene

Science.gov (United States)

Ansari, Mohd Meenhaz; Ashraf, SSZ

2018-05-01

We investigate the phonon drag thermopower from flexural phonons as a function of electron temperature and carrier concentration in the Bloch-Gruneisen regime in non-strained bilayer graphene using Boltzmann transport equation approach. The flexural phonons are expected to be the major source of intrinsic scattering mechanism in unstrained bilayer graphene due to their large density. The flexural phonon modes dispersion relation is quadratic so these low energy flexural phonons abound at room temperature and as a result deform the bilayer graphene sheet in the out of plane direction and affects the transport properties. We also produce analytical result for phonon-drag thermopower from flexural phonons and find that phonon-drag thermopower depicts T2 dependence on temperature and n-1 on carrier concentration.

Lattice instability and soft phonons in single-crystal La/sub 2-//sub x/Sr/sub x/CuO4

International Nuclear Information System (INIS)

Boeni, P.; Axe, J.D.; Shirane, G.

1988-01-01

The dispersion of the low-lying phonon branches of several doped and undoped single crystals of La/sub 2-//sub x/Sr/sub x/CuO 4 have been investigated by using inelastic-neutron-scattering techniques. The zone-center modes are in good agreement with Raman measurements. The reported peaks in the phonon density of states show up at energies that correspond to extrema in the dispersion curves of the transverse and longitudinal acoustic branches near the zone boundary. The tetragonal-to-orthorhombic phase transition is caused by a softening of transverse-optic-phonon mode at the X point. The rotational nature of the soft mode leads to moderate weak electron-phonon coupling and the mode is unlikely to enhance significantly conventional phonon mediated superconductivity. We did not observe any evidence for the predicted breathing-mode instability near the zone boundary

Raman spectroscopic determination of the length, strength, compressibility, Debye temperature, elasticity, and force constant of the C-C bond in graphene.

Science.gov (United States)

Yang, X X; Li, J W; Zhou, Z F; Wang, Y; Yang, L W; Zheng, W T; Sun, Chang Q

2012-01-21

From the perspective of bond relaxation and bond vibration, we have formulated the Raman phonon relaxation of graphene, under the stimuli of the number-of-layers, the uni-axial strain, the pressure, and the temperature, in terms of the response of the length and strength of the representative bond of the entire specimen to the applied stimuli. Theoretical unification of the measurements clarifies that: (i) the opposite trends of the Raman shifts, which are due to the number-of-layers reduction, of the G-peak shift and arises from the vibration of a pair of atoms, while the D- and the 2D-peak shifts involve the z-neighbor of a specific atom; (ii) the tensile strain-induced phonon softening and phonon-band splitting arise from the asymmetric response of the C(3v) bond geometry to the C(2v) uni-axial bond elongation; (iii) the thermal softening of the phonons originates from bond expansion and weakening; and (iv) the pressure stiffening of the phonons results from bond compression and work hardening. Reproduction of the measurements has led to quantitative information about the referential frequencies from which the Raman frequencies shift as well as the length, energy, force constant, Debye temperature, compressibility and elastic modulus of the C-C bond in graphene, which is of instrumental importance in the understanding of the unusual behavior of graphene.

Acoustic properties of nanoscale oxide heterostructures probed by UV Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Bruchhausen, A [Instituto Balseiro and Centro Atomico Bariloche, Av. E. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Lanzillotti-Kimura, N D [Instituto Balseiro and Centro Atomico Bariloche, Av. E. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Fainstein, A [Instituto Balseiro and Centro Atomico Bariloche, Av. E. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Soukiassian, A [Department of Physics, Pennsylvania State University, University Park, PA, 16802 (United States); Tenne, D A [Department of Physics, Pennsylvania State University, University Park, PA, 16802 (United States); Schlom, D [Department of Physics, Pennsylvania State University, University Park, PA, 16802 (United States); Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA, 16802 (United States); Cantarero, A [Materials Science Institute, University of Valencia, PO Box 22085, E-46071 Valencia (Spain)

2007-12-15

We study high quality molecular-beam epitaxy grown BaTiO{sub 3}/SrTiO{sub 3} superlat-tices using ultraviolet Raman spectroscopy. In the low energy spectral region, acoustic phonon doublets are observed. These are due to the artificial superlattice periodicity and consequent folding of the acoustic phonon dispersion. From the study of samples with different BaTiO{sub 3}/SrTiO{sub 3} layer thicknesses the effective sound velocities within each of the layers are obtained.

Influence of a photoexcited electron-hole plasma on the Raman scattering spectra of YBa2Cu3Ox single crystals

International Nuclear Information System (INIS)

Goncharov, A.F.; Denisov, V.N.; Mavrin, B.N.; Podobedov, V.B.

1988-01-01

The Raman spectra of tetragonal YBa 2 Cu 3 O x crystals in the region of ∼500 cm -1 were determined using different power densities I 0 of the exciting radiation of wavelengths 4,880, 5,145, 5,321, and 6,471 angstrom at temperatures 80-300 K. An increase in I 0 revealed changes in the spectra due to interference of the electron continuum with a 470 cm -1 phonon and also due to activation of 560-590 cm -1 dipole vibrations because of interaction of photocarriers with the crystal lattice. An analysis of the spectra yielded the electron-phonon interaction constant. The changes in the spectra were of resonant nature, but they were absent in the case of the excitation wavelengths 5,321 and 6,471 angstrom. A triple multichannel Raman spectrometer, developed by the authors, made it possible to record simultaneously a spectral interval of 500 cm -1 in the range ≥ 25 cm -1 on excitation with cw laser radiation

Influence of piezoelectric strain on the Raman spectra of BiFeO{sub 3} films deposited on PMN-PT substrates

Energy Technology Data Exchange (ETDEWEB)

Himcinschi, Cameliu, E-mail: himcinsc@physik.tu-freiberg.de; Talkenberger, Andreas; Kortus, Jens [TU Bergakademie Freiberg, Institute of Theoretical Physics, 09596 Freiberg (Germany); Guo, Er-Jia [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany); Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States); Dörr, Kathrin [Institute of Physics, Martin-Luther-University Halle-Wittenberg, 06099 Halle (Germany); Institute for Metallic Materials, IFW Dresden, 01069 Dresden (Germany)

2016-01-25

BiFeO{sub 3} epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.28PbTiO{sub 3} (PMN-PT) substrates with a conductive buffer layer (La{sub 0.7}Sr{sub 0.3}MnO{sub 3} or SrRuO{sub 3}) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows one to directly obtain a quantitative correlation between the strain and the shift of the Raman-active phonons. This is a prerequisite for making Raman scattering a strong tool to probe the strain coupling in multiferroic nanostructures. Using the Poisson's number for BiFeO{sub 3}, one can determine the volume change induced by strain, and therefore the Grüneisen parameters for specific phonon modes.

High-temperature Raman spectroscopy of solid oxide fuel cell materials and processes.

Science.gov (United States)

Pomfret, Michael B; Owrutsky, Jeffrey C; Walker, Robert A

2006-09-07

Chemical and material processes occurring in high temperature environments are difficult to quantify due to a lack of experimental methods that can probe directly the species present. In this letter, Raman spectroscopy is shown to be capable of identifying in-situ and noninvasively changes in material properties as well as the formation and disappearance of molecular species on surfaces at temperatures of 715 degrees C. The material, yttria-stabilized zirconia or YSZ, and the molecular species, Ni/NiO and nanocrystalline graphite, factor prominently in the chemistry of solid oxide fuel cells (SOFCs). Experiments demonstrate the ability of Raman spectroscopy to follow reversible oxidation/reduction kinetics of Ni/NiO as well as the rate of carbon disappearance when graphite, formed in-situ, is exposed to a weakly oxidizing atmosphere. In addition, the Raman active phonon mode of YSZ shows a temperature dependent shift that correlates closely with the expansion of the lattice parameter, thus providing a convenient internal diagnostic for identifying thermal gradients in high temperature systems. These findings provide direct insight into processes likely to occur in operational SOFCs and motivate the use of in-situ Raman spectroscopy to follow chemical processes in these high-temperature, electrochemically active environments.

RAMAN LIGHT SCATTERING IN PSEUDOSPIN-ELECTRON MODEL AT STRONG PSEUDOSPIN-ELECTRON INTERACTION

Directory of Open Access Journals (Sweden)

T.S.Mysakovych

2004-01-01

Full Text Available Anharmonic phonon contributions to Raman scattering in locally anharmonic crystal systems in the framework of the pseudospin-electron model with tunneling splitting of levels are investigated. The case of strong pseudospin-electron coupling is considered. Pseudospin and electron contributions to scattering are taken into account. Frequency dependences of Raman scattering intensity for different values of model parameters and for different polarization of scattering and incident light are investigated.

Phonon Anharmonicity of Germanium in the Temperature Range 80-880 K

Energy Technology Data Exchange (ETDEWEB)

Nelin, G; Nilsson, G

1974-06-15

Phonon frequency shifts and line widths in germanium have been studied in the temperature range 80 - 880 K by means of thermal neutron spectrometry. The results cannot be described in terms of the quasiharmonic approximation in which phonon frequencies are solely volume dependent. Theoretical calculations are found to be more satisfactory for the Raman frequency than for most other modes. A good account of the observed shifts is given by a proposal due to Barron according to which the relative frequency renormalization of a crystal is proportional to the total harmonic vibrational energy. An analysis of the gradients of measured dispersion relations in the principal symmetry directions at 80 K is presented. It is shown that accidental degeneracies may influence the dispersion

Raman scattering in orthorhombic CuInS{sub 2} nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Dzhagan, V.M.; Valakh, M.Ya. [Institute of Semiconductors Physics, National Academy of Sciences of Ukraine, Kyiv (Ukraine); Litvinchuk, A.P. [Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX (United States); Kruszynska, M.; Kolny-Olesiak, J. [Energy and Semiconductor Research Laboratory, Department of Physics, Carl von Ossietzky University of Oldenburg (Germany); Himcinschi, C. [Institute of Theoretical Physics, TU Bergakademie Freiberg (Germany); Zahn, D.R.T. [Semiconductor Physics, Chemnitz University of Technology (Germany)

2014-01-15

We report the results of non-resonant and resonant Raman scattering in orthorhombic nanocrystalline CuInS{sub 2} semiconductor, supported by density functional first principle lattice dynamics calculations. A larger number of dominant phonon modes in comparison with standard tetragonal CuInS{sub 2} phases is shown to be associated with peculiarities of cation sublattice ordering and is the ''fingerprint'' of the corresponding structural polymorph. Good overall agreement is found between theoretical and experimental phonon mode frequencies. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

Directory of Open Access Journals (Sweden)

Jun-Yong Lu

2011-09-01

Full Text Available In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111 substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively.

Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopy

International Nuclear Information System (INIS)

Zhang Guangchen; Feng Shiwei; Li Jingwan; Guo Chunsheng; Zhao Yan

2012-01-01

Channel temperature determinations of AlGaN/GaN high electron mobility transistors (HEMTs) by high spectral resolution micro-Raman spectroscopy are proposed. The temperature dependence of the E2 phonon frequency of GaN material is calibrated by using a JYT-64000 micro-Raman system. By using the Lorentz fitting method, the measurement uncertainty for the Raman phonon frequency of ±0.035 cm −1 is achieved, corresponding to a temperature accuracy of ±3.2 °C for GaN material, which is the highest temperature resolution in the published works. The thermal resistance of the tested AlGaN/GaN HEMT sample is 22.8 °C/W, which is in reasonably good agreement with a three dimensional heat conduction simulation. The difference among the channel temperatures obtained by micro-Raman spectroscopy, the pulsed electrical method and the infrared image method are also investigated quantificationally. (semiconductor devices)

Resonant Raman scattering of ZnS, ZnO, and ZnS/ZnO core/shell quantum dots

Energy Technology Data Exchange (ETDEWEB)

Milekhin, A.G. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Novosibirsk State University, Novosibirsk (Russian Federation); Yeryukov, N.A.; Sveshnikova, L.L.; Duda, T.A. [Institute of Semiconductor Physics, Novosibirsk (Russian Federation); Himcinschi, C. [TU Bergakademie Freiberg, Institut fuer Theoretische Physik, Freiberg (Germany); Zenkevich, E.I. [Belarussian National Technical University, Minsk (Belarus); Zahn, D.R.T. [Chemnitz University of Technology, Semiconductor Physics, Chemnitz (Germany)

2012-05-15

Resonant Raman scattering by optical phonon modes as well as their overtones was investigated in ZnS and ZnO quantum dots grown by the Langmuir-Blodgett technique. The in situ formation of ZnS/ZnO core/shell quantum dots was monitored by Raman spectroscopy during laser illumination. (orig.)

Raman spectroscopy of Ba(Fe{sub 1−x}Mn{sub x}){sub 2}As{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Dias, Fabio Teixeira [Universidade Federal de Pelotas (UFPEL), RS (Brazil); Pinheiro, Lincoln Brum Leite Gusmao [Instituto Federal de Educacao, Ciencia e Tecnologia do Rio Grande do Sul (IFRS), Erechim, RS (Brazil); Jurelo, Alcione Roberto, E-mail: arjurelo@uepg.br [Universidade Estadual de Ponta Grossa (UEPG), PR (Brazil). Departamento de Fisica

2015-10-01

Raman scattering measurements on iron–pnictide Mn-doped BaFe{sub 2}As{sub 2} single crystals are reported. Single crystals were grown out of a Fe As self-flux using conventional high-temperature solution growth and characterized by X-ray diffraction, atomic force microscopy, and Raman. Raman spectra were obtained at room temperature and 77 K on ab-and a(b)c-planes. Two of four phonon modes allowed by symmetry were found and identified. It was observed that the scattering intensity of A{sub 1g} mode and the frequencies of the A{sub 1g} and B{sub 1g} phonons are dependent upon doping of Mn. The dependence of scattering intensity and frequency of A{sub 1g} mode on Mn doping might indicate that the Mn ion also occupies the As site. (author)

High temperature phase transition by Raman scattering in SmAlO3

International Nuclear Information System (INIS)

Alain, P.; Piriou, B.

1975-01-01

Data on the Raman phonon spectra are summarized. Experimental procedure is given. Frequencies and damping coefficients are reported. In spite of coloration and blackbody radiation from the sample, experiments were carried out up to 1,500K [fr

Lattice dynamics of CaC.sub.6./sub. by Raman spectroscopy

Czech Academy of Sciences Publication Activity Database

Hlinka, Jiří; Gregora, Ivan; Pokorný, Jan; Hérold, C.; Emery, N.; Mareché, J.F.; Lagrange, P.

2007-01-01

Roč. 76, č. 14 (2007), 144512/1-144512/6 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100520 Keywords : Raman scattering * phonon spectra * CaC 6 * superconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

Ultrafast optical generation of squeezed magnon states and long lifetime coherent LO phonons

Science.gov (United States)

Zhao, Jimin

2005-12-01

Ultrafast optical pulses have been used to generate, probe, and control low-energy elementary excitations in crystals. In particular, we report the first experimental demonstration of the generation of quantum squeezed states of magnons (collective spin-wave excitations) in a magnetic material, and new progress in experimental investigation of anharmonic interactions in a semiconductor. The mechanism for the magnon squeezing is two-magnon impulsive stimulated Raman scattering (ISRS). Femtosecond laser pulses have been used to coherently correlate degenerate counter-propagating magnons in the antiferromagnetic insulator MnF2. In the squeezed state, fluctuations of the magnetization of a crystallographic unit cell vary periodically in time and are reduced below that of the ground-state quantum noise. Similar experiments were also performed in another antiferromagnetic insulator, FeF2, for which the squeezing effect is one order of magnitude larger. We have also investigated the anharmonic interaction of the low-frequency E2 phonon in ZnO through ISRS. Temperature dependence of the linewidth and frequency indicates that the two-phonon up-conversion process is the dominant decay channel and isotopic disorder may be the main limit on the lifetime at low temperature. We have observed the longest lifetime of an optical phonon mode in a solid (211 ps at 5 K). And we have found that pump-probe experiments, compared with spontaneous Raman spectroscopy, have extremely high accuracy in determining the frequency of a low-lying excitation.

High-pressure Raman study of vibrational spectra in crystalline acetanilide

Science.gov (United States)

Sakai, Masamichi; Kuroda, Noritaka; Nishina, Yuichiro

1993-01-01

We have studied the effect of pressure on the low-frequency lattice modes and the amide-I (N-CO stretching) vibrational modes in crystalline acetanilide (C6H5NHCOCH3) in the temperature range 80-300 K by means of Raman spectroscopy. The Raman intensity of the 1650-cm-1 band, which appears upon cooling, is enhanced by applying pressure. The energy difference between the amide-I phonon (Ag mode) and the 1650-cm-1 bands does not change appreciably under pressure up to at least 4 GPa. These results are analyzed in terms of the self-trapped model in which a single lattice mode couples with the amide-I excitation by taking into account the effect of pressure on the low-frequency lattice modes and on the dipole-dipole interactions associated with the amide-I vibration. A band is observed at 30 cm-1 below the amide-I phonon band at low temperatures with a pressure above ~2 GPa.

Sensitivity Modulation of Upconverting Thermometry through Engineering Phonon Energy of a Matrix.

Science.gov (United States)

Suo, Hao; Guo, Chongfeng; Zheng, Jiming; Zhou, Bo; Ma, Chonggeng; Zhao, Xiaoqi; Li, Ting; Guo, Ping; Goldys, Ewa M

2016-11-09

Investigation of the unclear influential factors to thermal sensing capability is the only way to achieve highly sensitive thermometry, which is greatly needed to meet the growing demand for potential sensing applications. Here, the effect from the phonon energy of a matrix on the sensitivity of upconversion (UC) microthermometers is elaborately discussed using a controllable method. Uniform truncated octahedral YF 3 :Er 3+ /Yb 3+ microcrystals were prepared by a hydrothermal approach, and phase transformation from YF 3 to YOF and Y 2 O 3 with nearly unchanged morphology and size was successfully realized by controlling the annealing temperature. The phonon energies of blank matrixes were determined by FT-IR spectra and Raman scattering. Upon 980 nm excitation, phonon energy-dependent UC emitting color was finely tuned from green to yellow for three samples, and the mechanisms were proposed. Thermal sensing behaviors based on the TCLs ( 2 H 11/2 / 4 S 3/2 ) were evaluated, and the sensitivities gradually grew with the increase in the matrix's phonon energy. According to chemical bond theory and first-principle calculations, the most intrinsic factors associated with thermometric ability were qualitatively demonstrated through analyzing the inner relation between the phonon energy and bond covalency. The exciting results provide guiding insights into employing appropriate host materials with desired thermometric ability while offering the possibility of highly accurate measurement of temperature.

Effects of strain on phonon interactions and phase nucleation in several semiconductor and nano particle systems

Science.gov (United States)

Tallman, Robert E.

Raman scattering is utilized to explore the effects of applied pressure and strain on anharmonic phonon interactions and nucleation of structural transitions in several bulk and nanoparticle semiconductor systems. The systems investigated are bulk ZnS and ZnSe in several isotopic compositions, InP/CdS core/shell nanoparticles exhibiting confined and surface optical Raman modes, and amorphous selenium films undergoing photo-induced crystallization. The anharmonic decay of long-wavelength optical modes into two-phonon acoustic combinations modes is studied in 64Zn32S, 64Zn34S, natZnatS bulk crystals by measuring the TO(Gamma) Raman line-shape as a function of applied hydrostatic pressure. The experiments are carried out at room temperature and 16K for pressures up to 150 kbars using diamond-anvil cells. The most striking effects occur in 68Zn32S where the TO(Gamma) peak narrows by a factor of 10 and increases in intensity at pressures for which the TO(Gamma) frequency has been tuned into a gap in the two-phonon density of states (DOS). In all the isotopic compositions, the observed phonon decay processes can be adequately explained by a second order perturbation treatment of the anharmonic coupling between TO(Gamma) and TA + LA combinations at various critical points, combined with an adiabatic bond-charge model for the phonon DOS and the known mode Gruneisen parameters. Bulk ZnSe crystals exhibit very different behavior. Here we find that anharmonic decay alone can not explain the excessive (˜ 60 cm-1 ) broadening in the TO(Gamma) Raman peak observed as the pressure approaches to within 50kbar of the ZB -> B1 phase transition (at P ˜ 137 kbar). Rather the broadening appears to arise from antecedent nucleation of structural changes within nanoscopic domains, with the mechanism for line-shape changes being mode mixing via localization and disorder instead of anharmonicity. To sort out these contributions, pressure experiments on natural ZnSe and on isotopically pure

Raman scattering of monolayer graphene: the temperature and oxygen doping effects

International Nuclear Information System (INIS)

Zhou Haiqing; Qiu Caiyu; Yu Fang; Yang Huaichao; Chen Minjiang; Hu Lijun; Guo Yanjun; Sun Lianfeng

2011-01-01

Raman spectra of monolayer graphene at various temperatures (303-473 K) are measured. In Raman scattering with wave numbers ranging from 1200 to 3400 cm -1 , the four main Raman peaks (G, 2D, T + D and 2D') show temperature-dependent behaviour, but have different frequency shifts with increase in temperature. We propose that the peak frequency shift is related mainly to the elongation of C-C bond due to thermal expansion or anharmonic coupling of phonon modes, and oxygen-induced strong hole doping on the graphene surface. The doping effect can be confirmed from the frequency shifts, full-width at half-maximum as well as the area and intensity ratios of G and 2D peaks in temperature-dependent Raman scattering of graphene, room-temperature Raman spectra of pristine graphene and graphene cooled down after Raman measurement at 473 K in air. Therefore, the oxygen doping effect and temperature effect coexist in temperature-dependent Raman scattering of monolayer graphene.

Phonon superradiance and phonon laser effect in nanomagnets.

Science.gov (United States)

Chudnovsky, E M; Garanin, D A

2004-12-17

We show that the theory of spin-phonon processes in paramagnetic solids must take into account the coherent generation of phonons by the magnetic centers. This effect should drastically enhance spin-phonon rates in nanoscale paramagnets and in crystals of molecular nanomagnets.

Raman scattering studies of YBa2Cu3O7-x thin films grown by chemical vapor deposition and metal-organic deposition

International Nuclear Information System (INIS)

Lee, E.; Yoon, S.; Um, Y.M.; Jo, W.; Seo, C.W.; Cheong, H.; Kim, B.J.; Lee, H.G.; Hong, G.W.

2007-01-01

We present results of Raman scattering studies of superconducting YBa 2 Cu 3 O 7-x (YBCO) films grown by chemical vapor deposition and metal-organic deposition methods. It is shown by X-ray diffraction that all the as-grown YBCO films have a highly c-axis oriented and in-plane aligned texture. Raman scattering measurements were used to investigate optical phonon modes, oxygen contents, structural properties, and second-phases of the YBCO coated conductors. Raman spectra of YBCO films with lower-transport qualities exhibit additional phonon modes at ∼300 cm -1 , ∼600 cm -1 , and ∼630 cm -1 , which are related to second-phases such as Ba 2 Cu 3 O 5.9 and BaCuO 2 . Our results strongly suggest that Raman scattering be useful for optimizing YBCO film growth conditions

Phonon activity and intermediate glassy phase of YVO3

International Nuclear Information System (INIS)

Massa, Nestor E.; Piamonteze, Cinthia; Tolentino, Helio C.N.; Alonso, Jose Antonio; Martinez-Lope, Maria Jesus; Casais, Maria Teresa

2004-01-01

We show that in YVO 3 additional hard phonons gradually become zone center infrared active below ∼210 K, verifying that a lattice phase transition takes place at about that temperature. Their gradual increment in intensity between ∼210 and ∼77 K is associated with a 'glassy' behavior found in the temperature-dependent V K edge pseudoradial distribution. This translates into an increase in the Debye-Waller factors ascribed to the appearance of V local structural disorder below ∼150 K. Conflicts between various ordering mechanisms in YVO 3 bring up similarities of the intermediate phase to known results in dielectric incommensurate systems, suggesting the formation of commensurate domains below 116 K, the onset temperature of G-type antiferromagnetism. We propose that ∼210 and ∼77 K be understood as the temperatures where the commensurate-incommensurate and incommensurate-commensurate 'lock-in' phase transitions take place. We found support for this interpretation in the inverted λ shapes of the measured heat capacity and in the overall temperature dependence of the hard phonons

Use of low-frequency Raman spectroscopy and chemometrics for the quantification of crystallinity in amorphous griseofulvin tablets

DEFF Research Database (Denmark)

Mah, Pei T.; Fraser, Sara J.; Reish, Matthew E.

2015-01-01

in stored amorphous samples earlier than the mid-frequency 785 nm Raman system. Overall, this study suggests that low-frequency Raman spectroscopy has at least equally good performance compared to mid-frequency Raman for quantitative analysis of crystallinity in the pharmaceutical setting. More generally......Low-frequency Raman spectroscopy, which directly probes phonon lattice modes of crystal structures, has much unexplored potential for sensitive qualitative and quantitative analysis of crystallinity in drugs and excipients. In this study, the level of crystallinity in tablets containing amorphous...

Relaxation of the electron spin in quantum dots via one- and two-phonon processes

International Nuclear Information System (INIS)

Calero, C.; Chudnovsky, E.M.; Garanin, D.A.

2007-01-01

We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the magnetic field has been obtained in terms of the electron gyromagnetic tensor and macroscopic elastic constants of the solid

Relaxation of the electron spin in quantum dots via one- and two-phonon processes

Energy Technology Data Exchange (ETDEWEB)

Calero, C. [Department of Physics and Astronomy, Lehman College, City University of New York, 250 Bedford Park Boulevard West, Bronx, NY 10468-1589 (United States)]. E-mail: carlos.calero-borrallo@lehman.cuny.edu; Chudnovsky, E.M. [Department of Physics and Astronomy, Lehman College, City University of New York, 250 Bedford Park Boulevard West, Bronx, NY 10468-1589 (United States); Garanin, D.A. [Department of Physics and Astronomy, Lehman College, City University of New York, 250 Bedford Park Boulevard West, Bronx, NY 10468-1589 (United States)

2007-09-15

We have studied direct and Raman processes of the decay of electron spin states in a quantum dot via radiation of phonons corresponding to elastic twists. Universal dependence of the spin relaxation rate on the strength and direction of the magnetic field has been obtained in terms of the electron gyromagnetic tensor and macroscopic elastic constants of the solid.

Electron phonon couplings in 2D perovskite probed by ultrafast photoinduced absorption spectroscopy

Science.gov (United States)

Huynh, Uyen; Ni, Limeng; Rao, Akshay

We use the time-resolved photoinduced absorption (PIA) spectroscopy with 20fs time resolution to investigate the electron phonon coupling in the self-assembled hybrid organic layered perovskite, the hexyl ammonium lead iodide compound (C6H13NH3)2 (PbI4) . The coupling results in the broadening and asymmetry of its temperature-dependence photoluminescence spectra. The exact time scale of this coupling, however, wasn't reported experimentally. Here we show that using an ultrashort excitation pulse allows us to resolve from PIA kinetics the oscillation of coherent longitudinal optical phonons that relaxes and self-traps electrons to lower energy states within 200 fs. The 200fs relaxation time is equivalent to a coupling strength of 40meV. Two coupled phonon modes are also identified as about 100 cm-1 and 300 cm-1 from the FFT spectrum of the PIA kinetics. The lower energy mode is consistent with previous reports and Raman spectrum but the higher energy one hasn't been observed before.

One-dimensional hypersonic phononic crystals.

Science.gov (United States)

Gomopoulos, N; Maschke, D; Koh, C Y; Thomas, E L; Tremel, W; Butt, H-J; Fytas, G

2010-03-10

We report experimental observation of a normal incidence phononic band gap in one-dimensional periodic (SiO(2)/poly(methyl methacrylate)) multilayer film at gigahertz frequencies using Brillouin spectroscopy. The band gap to midgap ratio of 0.30 occurs for elastic wave propagation along the periodicity direction, whereas for inplane propagation the system displays an effective medium behavior. The phononic properties are well captured by numerical simulations. The porosity in the silica layers presents a structural scaffold for the introduction of secondary active media for potential coupling between phonons and other excitations, such as photons and electrons.

Raman spectroscopy of optical properties in CdS thin films

Directory of Open Access Journals (Sweden)

Trajić J.

2015-01-01

Full Text Available Properties of CdS thin films were investigated applying atomic force microscopy (AFM and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation. [Projekat Ministarstva nauke Republike Srbije, br. 45003

Pressure dependence of Raman modes in the chalcopyrite quaternary alloy AgxCu1-xGaS2

International Nuclear Information System (INIS)

Choi, In-Hwan; Yu, Peter Y.

2000-01-01

Raman scattering in the chalcopyrite quaternary alloy Ag x Cu 1-x GaS 2 has been studied under high pressure (up to 7 GPa) and at low temperature (50 K) using a diamond anvil high pressure cell for alloy concentrations x=1, 0.75, 0.5, 0.25 and 0. This has allowed us to determine the dependence of their zone-center phonon modes on both pressure and alloy concentration. The resultant phonon pressure coefficients are helpful in understanding the nature of the phonon modes in these chalcopyrites

Detecting the phonon spin in magnon-phonon conversion experiments

Science.gov (United States)

Holanda, J.; Maior, D. S.; Azevedo, A.; Rezende, S. M.

2018-05-01

Recent advances in the emerging field of magnon spintronics have stimulated renewed interest in phenomena involving the interaction between spin waves, the collective excitations of spins in magnetic materials that quantize as magnons, and the elastic waves that arise from excitations in the crystal lattice, which quantize as phonons. In magnetic insulators, owing to the magnetostrictive properties of materials, spin waves can become strongly coupled to elastic waves, forming magnetoelastic waves—a hybridized magnon-phonon excitation. While several aspects of this interaction have been subject to recent scrutiny, it remains unclear whether or not phonons can carry spin. Here we report experiments on a film of the ferrimagnetic insulator yttrium iron garnet under a non-uniform magnetic field demonstrating the conversion of coherent magnons generated by a microwave field into phonons that have spin. While it is well established that photons in circularly polarized light carry a spin, the spin of phonons has had little attention in the literature. By means of wavevector-resolved Brillouin light-scattering measurements, we show that the magnon-phonon conversion occurs with constant energy and varying linear momentum, and that the light scattered by the phonons is circularly polarized, thus demonstrating that the phonons have spin.

Raman Identification of Polymorphs in Pentacene Films

Directory of Open Access Journals (Sweden)

Alberto Girlando

2016-04-01

Full Text Available We use Raman spectroscopy to characterize thin films of pentacene grown on Si/SiO x by Supersonic Molecular Beam Deposition (SuMBD. We find that films up to a thickness of about 781 Å (∼ 52 monolayers all belong to the so-called thin-film (TF phase. The appearance with strong intensity of some lattice phonons suggests that the films are characterized by good intra-layer order. A comparison of the Raman spectra in the lattice and CH bending spectral regions of the TF polymorph with the corresponding ones of the high-temperature (HT and low-temperature (LT bulk pentacene polymorphs provides a quick and nondestructive method to identify the different phases.

Electron Raman scattering in semiconductor quantum wire in external magnetic field: Froehlich interaction

International Nuclear Information System (INIS)

Betancourt-Riera, Ri.; Nieto Jalil, J.M.; Betancourt-Riera, Re.; Riera, R.

2009-01-01

The differential cross-section for an electron Raman scattering process in a semiconductor quantum wire in the presence of an external magnetic field perpendicular to the plane of confinement regarding phonon-assisted transitions, is calculated. We assume single parabolic conduction band and present a description of the phonon modes of cylindrical structures embedded in another material using the Froehlich phonon interaction. To illustrate the theory we use a GaAs/Al 0.35 Ga 0.75 As system. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. The magnetic field distribution is considered constant with value B 0 inside of the wire, and zero outside.

Raman Spectroscopy of Two-Dimensional Bi2TexSe3 − x Platelets Produced by Solvothermal Method

Directory of Open Access Journals (Sweden)

Jian Yuan

2015-08-01

Full Text Available In this paper, we report a facile solvothermal method to produce both binary and ternary compounds of bismuth chalcogenides in the form of Bi2TexSe3 − x. The crystal morphology in terms of geometry and thickness as well as the stoichiometric ratio can be well controlled, which offers the opportunities to systematically investigate the relationship between microstructure and phonon scattering by Raman spectroscopy. Raman spectra of four compounds, i.e., Bi2Se3, Bi2Se2Te, Bi2SeTe2 and Bi2Te3, were collected at four different excitation photon energies (2.54, 2.41, 1.96, and 1.58 eV. It is found that the vibrational modes are shifted to higher frequency with more Se incorporation towards the replacement of Te. The dependence of Raman vibrational modes on excitation photon energy was investigated. As the excitation photon energy increases, three Raman vibrational modes (A1g1, Eg2 and A1g2 of the as-produced compounds move to low frequency. Three Infrared-active (IR-active modes were observed in thin topological insulators (TIs crystals.

Waveguiding in supported phononic crystal plates

International Nuclear Information System (INIS)

Vasseur, J; Hladky-Hennion, A-C; Deymier, P; Djafari-Rouhani, B; Duval, F; Dubus, B; Pennec, Y

2007-01-01

We investigate, with the help of the finite element method, the existence of absolute band gaps in the band structure of a free-standing phononic crystal plate and of a phononic crystal slab deposited on a substrate. The two-dimensional phononic crystal is constituted by a square array of holes drilled in an active piezoelectric (PZT5A or AlN) matrix. For both matrix materials, an absolute band gap occurs in the band structure of the free-standing plate provided the thickness of the plate is on the order of magnitude of the lattice parameter. When the plate is deposited on a Si substrate, the absolute band gap still remains when the matrix of the phononic crystal is made of PZT5A. The AlN phononic crystal plate losses its gap when supported by the Si substrate. In the case of the PZT5A matrix, we also study the possibility of localized modes associated with a linear defect created by removing one row of air holes in the deposited phononic crystal plate

Using Deep UV Raman Spectroscopy to Identify In Situ Microbial Activity

Science.gov (United States)

Sapers, H. M.; Wanger, G.; Amend, J.; Orphan, V. J.; Bhartia, R.

2017-12-01

Microbial communities living in close association with lithic substrates play a critical role in biogeochemical cycles. Understanding the interactions between microorganisms and their abiotic substrates requires knowledge of microbial activity. Identifying active cells adhered to complex environmental substrates, especially in low biomass systems, remains a challenge. Stable isotope probing (SIP) provides a means to trace microbial activity in environmental systems. Active members of the community take up labeled substrates and incorporate the labels into biomolecules that can be detected through downstream analyses. Here we show for the first time that Deep UV (248 nm) Raman spectroscopy can differentiate microbial cells labeled with stable isotopes. Previous studies have used Raman spectroscopy with a 532 nm source to identify active bacterial cells by measuring a Raman shift between peaks corresponding to amino acids incorporating 13C compared to controls. However, excitation at 532 nm precludes detection on complex substrates due to high autofluorescence of native minerals. Excitation in the DUV range offers non-destructive imaging on mineral surfaces - retaining critical contextual information. We prepared cultures of E. coli grown in 50 atom% 13C glucose spotted onto Al wafers to test the ability of DUV Raman spectroscopy to differentiate labeled and unlabeled cells. For the first time, we are able to demonstrate a distinct and repeatable shift between cells grown in labeled media and unlabeled media when imaged on Al wafers with DUV Raman spectroscopy. The Raman spectra are dominated by the characteristic Raman bands of guanine. The dominant marker peak for guanine attributed to N7-C8 and C8-N9 ring stretching and C8-H in-plane bending, is visible at 1480 cm-1 in the unlabeled cells and is blue-shifted by 20 wavenumbers to 1461 cm-1 in the labeled cells. The ability of DUV Raman to effectively identify regions containing cells that have incorporated isotopic

Electronic states and phonon properties of Ge{sub x}Si{sub 1−x} nanostructures

Energy Technology Data Exchange (ETDEWEB)

Zhao, P.Q. [Department of Applied Physics, Nanjing Tech University, Nanjing 211816 (China); National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Liu, L.Z. [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Yang, Y.M. [Department of Physics, Southern University, Nanjing 210096 (China); Wu, X.L., E-mail: hkxlwu@nju.edu.cn [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Department of Physics, NingBo University, NingBo 3153001 (China)

2015-07-15

Ge{sub x}Si{sub 1−x} nanostructures that can be manipulated through size reduction, geometry variation, and alloying, are considered as one of the key developments for next generation technologies, due to their easy processing, unique properties, and compatibility with the existent silicon-based microelectronic industry. In this review, we have thoroughly discussed the major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals (NCs). Experimental and theoretical characterization related to several main factors, for example, size, composition, strain, temperature, and interface and surface were presented with special emphasis in low-frequency Raman scattering. Current difficulties in explaining the Raman spectra are the assignment of the low-frequency modes because of the complexity of the environment around the NCs, thus different theoretical models are introduced in detail to deal with different properties of Ge{sub x}Si{sub 1−x} alloy NCs including Lamb’s theory, complex-frequency (CF) model, core–shell matrix (CMS) model and spatial coherence effect model. - Highlights: • Major advances in electronic structures and phonon properties of Ge{sub x}Si{sub 1−x} nanocrystals are discussed thoroughly. • Experimental and theoretical characterization related to size, composition, strain, temperature, and interface/surface are elucidated. • Low-frequency Raman spectra are specially described based on spatial coherence effect model.

Raman Spectroscopic Studies of YBa{sub 2}Cu{sub 3}O{sub 7} Coated Conductors

Energy Technology Data Exchange (ETDEWEB)

Choi, Mi Kyeung; Mnh, Nguyen Van; Bae, J. S.; Jo, William; Yang, In Sang [Ewha Womans University, Seoul (Korea, Republic of); Ko, Rock Kil; Ha, Hong Soo; Park, Chan [Korea Electrotecnology Research Institute, Changwon (Korea, Republic of)

2005-04-15

We present results of Raman spectroscopic studies of superconducting YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) coated conductors. Raman scattering is used to characterize optical phonon modes, oxygen content, c-axis misalignment, and second phases of the YBCO coated conductors at a micro scale. A two-dimensional mapping of Raman spectra with transport properties has been performed to elucidate the effect of local propertied on current path and superconducting phase. The information taken from the local measurement will be useful for optimizing the process condition.

Phonon modes in Gd1-xCexBa2Cu3O7-δ

Directory of Open Access Journals (Sweden)

SH Mozaffari

2009-08-01

Full Text Available  XRD and Raman analyses were performed to probe the phase formation and the variation of the normal phonon frequencies of the high temperature superconductor GdBa2Cu3O7-δ upon Ce doping. It was found that in addition to the orthorhombic 123 phase, some nonsuperconducting peaks, which are mainly due to the BaCeO3 secondary phase, are also formed that suppress the superconducting transition temperature. Besides, analysis of the Raman peaks shows that substitutions of Ce for Gd in GdBa2Cu3O7-δ are restricted to low concentrations in favor of impurity island formation .

Far infrared and Raman response in tetragonal PZT ceramic films

Czech Academy of Sciences Publication Activity Database

Buixaderas, Elena; Kadlec, Christelle; Vaněk, Přemysl; Drnovšek, S.; Uršič, H.; Malič, B.

2015-01-01

Roč. 54, č. 6 (2015), s. 219-224 ISSN 0366-3175 R&D Projects: GA ČR(CZ) GA14-25639S Institutional support: RVO:68378271 Keywords : dielectric response * phonons * FIR spectroscopy * time-domain THz spectroscopy * Raman spectroscopy * effective medium * PZT Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.280, year: 2015

Suppression of Raman electron spin relaxation of radicals in crystals. Comparison of Cu2+ and free radical relaxation in triglycine sulfate and Tutton salt single crystals.

Science.gov (United States)

Hoffmann, S K; Goslar, J; Lijewski, S

2011-08-31

Electron spin-lattice relaxation was measured by the electron spin echo method in a broad temperature range above 4.2 K for Cu(2+) ions and free radicals produced by ionizing radiation in triglycine sulfate (TGS) and Tutton salt (NH4)(2)Zn(SO4)2 ⋅ 6H2O crystals. Localization of the paramagnetic centres in the crystal unit cells was determined from continuous wave electron paramagnetic resonance spectra. Various spin relaxation processes and mechanisms are outlined. Cu(2+) ions relax fast via two-phonon Raman processes in both crystals involving the whole phonon spectrum of the host lattice. This relaxation is slightly slower for TGS where Cu(2+) ions are in the interstitial position. The ordinary Raman processes do not contribute to the radical relaxation which relaxes via the local phonon mode. The local mode lies within the acoustic phonon band for radicals in TGS but within the optical phonon range in (NH4)(2)Zn(SO4)2 ⋅ 6H2O. In the latter the cross-relaxation was considered. A lack of phonons around the radical molecules suggested a local crystal amorphisation produced by x- or γ-rays.

Raman spectra of Hg-based superconductors: Effect of oxygen defects

Science.gov (United States)

Zhou, Xingjiang; Cardona, M.; Chu, C. W.; Lin, Q. M.; Loureiro, S. M.; Marezio, M.

1996-09-01

Polarized micro-Raman scattering measurements have been performed on the five members of the HgBa2Can-1CunO2n+2+δ (n=1, 2, 3, 4, and 5) high-Tc superconductor family. A systematic evolution of the spectrum, which mainly involves oxygen-related phonons around 590, 570, 540, and 470 cm-1, with an increasing number of CuO2 layers, has been observed. Local laser annealing measurements clearly demonstrate that all these phonons are closely related to interstitial oxygen in the HgOδ planes. The origin of the spectrum evolution with the number of CuO2 layers lies in the variation of interstitial oxygen content.

Quantitative analysis of sugar composition in honey using 532-nm excitation Raman and Raman optical activity spectra

Czech Academy of Sciences Publication Activity Database

Šugar, Jan; Bouř, Petr

2016-01-01

Roč. 47, č. 11 (2016), s. 1298-1303 ISSN 0377-0486 R&D Projects: GA ČR GA15-09072S Institutional support: RVO:61388963 Keywords : honey * sugar mixtures * spectral decompositions * Raman spectroscopy * Raman optical activity Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.969, year: 2016

Raman scattering study of phonons in Bi-based superconductor thin films

International Nuclear Information System (INIS)

Mejia-Garcia, C.; Diaz-Valdes, E.; Contreras-Puente, G.; Lopez-Lopez, J.L.; Jergel, M.; Morales, A.

2004-01-01

Raman spectra were obtained from samples of Bi-Pb-Sr-Ca-Cu-O (BPSCCO) thin films after varying several growth parameters, such as covering material, annealing time (t R ), annealing temperature (T R ), and nominal lead content (x). Thin films with the nominal composition Bi 1.4 Pb x Sr 2 Ca 2 Cu 3 O δ were grown on MgO substrates by a spray pyrolysis technique, followed by a solid state reaction. The results of Raman scattering measurements at room temperature show a series of vibrational optical modes within the range 300-900 cm -1 . The assignment of these modes was made by involving mainly the 2212 and 2223 phases and was confirmed by both X-ray diffraction and resistance in dependence of the temperature (R-T) measurements as well

Surface enhanced Raman optical activity (SEROA)

DEFF Research Database (Denmark)

Abdali, Salim; Blanch, E.W.

2008-01-01

Raman optical activity (ROA) directly monitors the stereochemistry of chiral molecules and is now an incisive probe of biomolecular structure. ROA spectra contain a wealth of information on tertiary folding, secondary structure and even the orientation of individual residues in proteins and nucleic...

Mid-infrared emission and Raman spectra analysis of Er(3+)-doped oxyfluorotellurite glasses.

Science.gov (United States)

Chen, Fangze; Xu, Shaoqiong; Wei, Tao; Wang, Fengchao; Cai, Muzhi; Tian, Ying; Xu, Shiqing

2015-04-10

This paper reports on the spectroscopic and structural properties in Er(3+)-doped oxyfluorotellurite glasses. The compositional variation accounts for the evolutions of Raman spectra, Judd-Ofelt parameters, radiative properties, and fluorescent emission. It is found that, when maximum phonon energy changes slightly, phonon density plays a crucial role in quenching the 2.7 μm emission generated by the Er(3+):(4)I11/2→(4)I13/2 transition. The comparative low phonon density contributes strong 2.7 μm emission intensity. The high branching ratio (18.63%) and large emission cross section (0.95×10(-20)  cm(2)) demonstrate that oxyfluorotellurite glass contained with 50 mol.% TeO2 has potential application in the mid-infrared region laser.

Effect of magnon-phonon interaction on transverse acoustic phonon excitation at finite temperature

International Nuclear Information System (INIS)

Cheng Taimin; Li Lin; Xianyu Ze

2007-01-01

A magnon-phonon interaction model is developed on the basis of two-dimensional square Heisenberg ferromagnetic system. By using Matsubara Green function theory transverse acoustic phonon excitation is studied and transverse acoustic phonon excitation dispersion curves is calculated on the main symmetric point and line in the first Brillouin zone. On line Σ it is found that there is hardening for transverse acoustic phonon on small wave vector zone (nearby point Γ), there is softening for transverse acoustic phonon on the softening zone and there is hardening for transverse acoustic phonon near point M. On line Δ it is found there is no softening and hardening for transverse acoustic phonon. On line Z it is found that there is softening for transverse acoustic phonon on small wave vector zone (nearby point X) and there is hardening for transverse acoustic phonon nearby point M. The influences of various parameters on transverse acoustic phonon excitation are also explored and it is found that the coupling of the magnon-phonon and the spin wave stiffness constant play an important role for the softening of transverse acoustic phonon

Noticeable red emission and Raman active modes in nanoscale gadolinium oxyfluoride (Gd4O3F6) systems with Eu3+ inclusion

International Nuclear Information System (INIS)

Hazarika, Samiran; Mohanta, Dambarudhar

2017-01-01

Eu 3+ doped gadolinium oxyfluoride (Gd 4 O 3 F 6 , GOF) nanoscale systems have been synthesized following a modified Pechini method. While exhibiting a tetragonal crystal structure, the GOF nanosystem gave an average crystallite size (d) of ∝21-26 nm. The Lotgering factor (L F ), which is a measure of orientation of crystallites along the preferred direction was found to vary between 0.22 and 0.48. In the photoluminescence spectra, ∝595 and ∝613 nm peaks were identified as magnetically driven ( 5 D 0 → 7 F 1 ) and electrically driven ( 5 D 0 → 7 F 2 ) transitions with latter (red emission) being strongly manifested with Eu 3+ doping concentration and intrinsic defects. Moreover, several Raman active modes have been probed in the Raman spectra with low frequency peaks (<300 cm -1 ) and moderate frequency peaks (∝481 and 567 cm -1 ) assigned to observable vibration of heavy atom Gd-Gd pairs and Gd-O groups, respectively. Apart from manifestation of phononic features, inclusion of Eu 3+ in the host lattice would bring new insight on improving the red emission response prior to concentration quenching. (orig.)

Enhanced Raman Scattering from NCM523 Cathodes Coated with Electrochemically Deposited Gold

Energy Technology Data Exchange (ETDEWEB)

Tornheim, Adam; Maroni, Victor A.; He, Meinan; Gosztola, David J.; Zhang, Zhengcheng

2017-01-01

Materials with the general composition LiMO2, where M is a mix of nickel, cobalt, and manganese, have been studied extensively as cathodes for lithium-based electrochemical cells. Some compositions, like LiNi0.5Co0.2Mn0.3O2 (NCM523), have already found application in commercial lithium-ion batteries. Pre-test and post-test analyses of these types of cathodes have benefited greatly from the use of Raman spectroscopy. Specifically, Raman spectroscopy can be used to investigate the phonons of the LiMO2 lattice. This is particularly useful for studies of the LiMO2 after it has been formed into the type of polymer-bonded laminate from which typical battery cathodes are cut. One of the problems that occurs in such studies is that the scattering from the LiMO2 phase gets progressively weaker as the nickel content increases. NCM523 poses one example of this behavior owing to the fact that half of the transition metal content is nickel. In this study we show that the intensity of the Raman scattering from the NCM523 phonons can be significantly increased by electroplating clusters of sub-micron gold particles on NCM523-containing laminate structures. The gold appears to plate somewhat selectively on the NCM523 particles in randomly sized clusters. These clusters stimulate the Raman scattering from the NCM523 to varying extents that can reach nearly 100 times the scattering intensity from uncoated pristine laminates.

A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

Directory of Open Access Journals (Sweden)

Titao Li

2016-11-01

Full Text Available Layered transition metal dichalcogenides (TMDs have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E12g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility.

Phonon manipulation with phononic crystals.

Energy Technology Data Exchange (ETDEWEB)

Kim Bongsang; Hopkins, Patrick Edward; Leseman, Zayd C.; Goettler, Drew F.; Su, Mehmet F. (University of New Mexico, Albuquerque, NM); El-Kady, Ihab Fathy; Reinke, Charles M.; Olsson, Roy H., III

2012-01-01

In this work, we demonstrated engineered modification of propagation of thermal phonons, i.e. at THz frequencies, using phononic crystals. This work combined theoretical work at Sandia National Laboratories, the University of New Mexico, the University of Colorado Boulder, and Carnegie Mellon University; the MESA fabrication facilities at Sandia; and the microfabrication facilities at UNM to produce world-leading control of phonon propagation in silicon at frequencies up to 3 THz. These efforts culminated in a dramatic reduction in the thermal conductivity of silicon using phononic crystals by a factor of almost 30 as compared with the bulk value, and about 6 as compared with an unpatterned slab of the same thickness. This work represents a revolutionary advance in the engineering of thermoelectric materials for optimal, high-ZT performance. We have demonstrated the significant reduction of the thermal conductivity of silicon using phononic crystal structuring using MEMS-compatible fabrication techniques and in a planar platform that is amenable to integration with typical microelectronic systems. The measured reduction in thermal conductivity as compared to bulk silicon was about a factor of 20 in the cross-plane direction [26], and a factor of 6 in the in-plane direction. Since the electrical conductivity was only reduced by a corresponding factor of about 3 due to the removal of conductive material (i.e., porosity), and the Seebeck coefficient should remain constant as an intrinsic material property, this corresponds to an effective enhancement in ZT by a factor of 2. Given the number of papers in literature devoted to only a small, incremental change in ZT, the ability to boost the ZT of a material by a factor of 2 simply by reducing thermal conductivity is groundbreaking. The results in this work were obtained using silicon, a material that has benefitted from enormous interest in the microelectronics industry and that has a fairly large thermoelectric power

Raman spectroscopy applied to identify metabolites in urine of physically active subjects.

Science.gov (United States)

Moreira, Letícia Parada; Silveira, Landulfo; da Silva, Alexandre Galvão; Fernandes, Adriana Barrinha; Pacheco, Marcos Tadeu Tavares; Rocco, Débora Dias Ferraretto Moura

2017-11-01

Raman spectroscopy is a rapid and non-destructive technique suitable for biological fluids analysis. In this work, dispersive Raman spectroscopy has been employed as a rapid and nondestructive technique to detect the metabolites in urine of physically active subjects before and after vigorous 30min pedaling or running compared to sedentary subjects. For so, urine samples from 9 subjects were obtained before and immediately after physical activities and submitted to Raman spectroscopy (830nm excitation, 250mW laser power, 20s integration time) and compared to urine from 5 sedentary subjects. The Raman spectra of urine from sedentary showed peaks related to urea, creatinine, ketone bodies, phosphate and other nitrogenous compounds. These metabolic biomarkers presented peaks with different intensities in the urine of physically active individuals after exercises compared to before, measured by the intensity of selected peaks the Raman spectra, which means different concentrations after training. These peaks presented different intensity values for each subject before physical activity, also behaving differently compared to the post-training: some subjects presented increase while others decrease the intensity. Raman spectroscopy may allow the development of a rapid and non-destructive test for metabolic evaluation of the physical training in active and trained subjects using urine samples, allowing nutrition adjustment with the sport's performance. Copyright © 2017 Elsevier B.V. All rights reserved.

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

International Nuclear Information System (INIS)

Kumar, Pragati; Agarwal, Avinash; Saxena, Nupur; Singh, Fouran; Gupta, Vinay

2014-01-01

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ a /Γ b ) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Surface phonons

CERN Document Server

Wette, Frederik

1991-01-01

In recent years substantial progress has been made in the detection of surface phonons owing to considerable improvements in inelastic rare gas scattering tech­ niques and electron energy loss spectroscopy. With these methods it has become possible to measure surface vibrations in a wide energy range for all wave vectors in the two-dimensional Brillouin zone and thus to deduce the complete surface phonon dispersion curves. Inelastic atomic beam scattering and electron energy loss spectroscopy have started to play a role in the study of surface phonons similar to the one played by inelastic neutron scattering in the investigation of bulk phonons in the last thirty years. Detailed comparison between experimen­ tal results and theoretical studies of inelastic surface scattering and of surface phonons has now become feasible. It is therefore possible to test and to improve the details of interaction models which have been worked out theoretically in the last few decades. At this point we felt that a concise, co...

Simulations and analysis of the Raman scattering and differential Raman scattering/Raman optical activity (ROA) spectra of amino acids, peptides and proteins in aqueous solution

DEFF Research Database (Denmark)

Jalkanen, Karl J.; Nieminen, R. M.; Bohr, Jakob

2000-01-01

The Raman and Raman optical activity (ROA) spectra of amino acids and small peptides in aqueous solution have been simulated by density functional theory and restricted Hartree/Fock methods. The treatment of the aqueous environment in treated in two ways. The water molecules in the first hydratio...

Two-Magnon Raman Scattering and Pseudospin-Lattice Interactions in Sr_{2}IrO_{4} and Sr_{3}Ir_{2}O_{7}.

Science.gov (United States)

Gretarsson, H; Sung, N H; Höppner, M; Kim, B J; Keimer, B; Le Tacon, M

2016-04-01

We have used Raman scattering to investigate the magnetic excitations and lattice dynamics in the prototypical spin-orbit Mott insulators Sr_{2}IrO_{4} and Sr_{3}Ir_{2}O_{7}. Both compounds exhibit pronounced two-magnon Raman scattering features with different energies, line shapes, and temperature dependencies, which in part reflect the different influence of long-range frustrating exchange interactions. Additionally, we find strong Fano asymmetries in the line shapes of low-energy phonon modes in both compounds, which disappear upon cooling below the antiferromagnetic ordering temperatures. These unusual phonon anomalies indicate that the spin-orbit coupling in Mott-insulating iridates is not sufficiently strong to quench the orbital dynamics in the paramagnetic state.

Observation of chiral phonons

KAUST Repository

Zhu, Hanyu; Yi, Jun; Li, Ming-yang; Xiao, Jun; Zhang, Lifa; Yang, Chih-Wen; Kaindl, Robert A.; Li, Lain-Jong; Wang, Yuan; Zhang, Xiang

2018-01-01

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing.

Observation of chiral phonons

KAUST Repository

Zhu, Hanyu

2018-02-01

Chirality reveals symmetry breaking of the fundamental interaction of elementary particles. In condensed matter, for example, the chirality of electrons governs many unconventional transport phenomena such as the quantum Hall effect. Here we show that phonons can exhibit intrinsic chirality in monolayer tungsten diselenide. The broken inversion symmetry of the lattice lifts the degeneracy of clockwise and counterclockwise phonon modes at the corners of the Brillouin zone. We identified the phonons by the intervalley transfer of holes through hole-phonon interactions during the indirect infrared absorption, and we confirmed their chirality by the infrared circular dichroism arising from pseudoangular momentum conservation. The chiral phonons are important for electron-phonon coupling in solids, phonon-driven topological states, and energy-efficient information processing.

Enhanced Raman scattering and nonlinear conductivity in Ag-doped hollow ZnO microspheres

Energy Technology Data Exchange (ETDEWEB)

Tringe, Joseph W.; Levie, Harold W.; McCall, Scott K.; Teslich, Nick E.; Wall, Mark A.; Orme, Christine A.; Matthews, Manyalibo J. [Lawrence Livermore National Laboratory, Livermore, CA (United States)

2012-10-15

Hollow spherical ZnO particles doped with Ag were synthesized with a two-step oxidation and sublimation furnace annealing process. Ag nanoparticle precipitates, as observed by transmission electron microscopy, were present in the polycrystalline ZnO matrix at Ag concentrations below 0.02 mol%, significantly below the 0.8 mol% solubility limit for Ag in ZnO. Enhanced Raman scattering of ZnO phonon modes is observed, increasing with Ag nanoparticle concentration. A further enhancement in Raman scattering due to resonance effects was observed for LO phonons excited by 2.33-eV photons as compared with Raman scattering under 1.96-eV excitation. Room-temperature photoluminescence spectra showed both a near-band-edge emission due to free exciton transitions and a mid-gap transition due to the presence of singly ionized oxygen vacancies. ZnO:Ag particles were measured electrically in a packed column and in monolithic form, and in both cases displayed nonlinear current-voltage characteristics similar to those previously observed in sintered ZnO:Ag monoliths where Ag-enhanced disorder at grain boundaries is thought to control current transport. We demonstrate therefore that Ag simultaneously modifies the electrical and optical properties of ZnO particles through the introduction of vacancies and other defects. (orig.)

Hypersonic phononic crystals.

Science.gov (United States)

Gorishnyy, T; Ullal, C K; Maldovan, M; Fytas, G; Thomas, E L

2005-03-25

In this Letter we propose the use of hypersonic phononic crystals to control the emission and propagation of high frequency phonons. We report the fabrication of high quality, single crystalline hypersonic crystals using interference lithography and show that direct measurement of their phononic band structure is possible with Brillouin light scattering. Numerical calculations are employed to explain the nature of the observed propagation modes. This work lays the foundation for experimental studies of hypersonic crystals and, more generally, phonon-dependent processes in nanostructures.

Photon induced resonant Raman scattering in CdS

International Nuclear Information System (INIS)

Muzart, J.; Lluesma, E.G.; Arguello, C.A.; Leite, R.C.C.

1975-01-01

A novel aspect of resonant Raman scattering is observed in CdS by means of the ratio of Stokes to anti-Stokes intensities. With increasing temperature, as the forbidden band energy approaches a value that is twice the incident photon energy, (from a Nd-Yag-laser) a large enhancement of the above ratio is observed for both the LO and the 2LO phonon Raman intensities. The results indicate a resonance with the scattered photon. Resonance is only observed for high incident photon intensities. A possible explanation for the above observations is that flooding of the crystal with photons of energy hν induces states of energy hν displaced from the electronic bands by mixing of electronic and photon states

Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy

KAUST Repository

Tangi, Malleswararao

2016-07-26

The dislocation free Inx Al 1-xN nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of Inx Al 1-xN NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A1(LO) phonons and single mode behavior for E2 H phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E2 H phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A1(LO) and E2 H phonons in Inx Al 1-xN NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important Inx Al 1-xN nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

Raman studies of lanthanum cuprate superconductors

International Nuclear Information System (INIS)

Weber, W.H.; Peters, C.R.; Logothetis, E.M.

1989-01-01

Raman-scattering studies of the high-T/sub c/ superconductor La/sub 2-//sub x/(Sr, Ba)/sub x/CuO 4 are briefly reviewed. A detailed analysis of the phonon-mode symmetries is given along with a discussion of the effects expected from the orthorhombic-to-tetragonal phase transition, which is known to occur in these materials. Survey spectra are given for powders, ceramics, and single crystals, and an oxide of Cu is identified as the primary impurity phase. Extensive spectra are given from oriented single crystals of La 2 CuO 4 and La/sub 1.85/Sr/sub 0.15/CuO 4 , and several mode assignments are made. Spectra for the high-temperature tetragonal phase and the low-temperature orthorhombic phase are given for each material. The soft phonon associated with the phase transition is seen in La 2 CuO 4 as is a broad peak arising from two-magnon scattering. Neither of these features is seen in the Sr-doped sample

Combined experimental and theoretical study on the Raman and Raman optical activity signatures of pentamethylundecane diastereoisomers.

Science.gov (United States)

Drooghaag, Xavier; Marchand-Brynaert, Jacqueline; Champagne, Benoît; Liégeois, Vincent

2010-09-16

The synthesis and the separation of the four stereoisomers of 2,4,6,8,10-pentamethylundecane (PMU) are described together with their characterization by Raman spectroscopy. In parallel, theoretical calculations of the Raman and vibrational Raman optical activity (VROA) spectra are reported and analyzed in relation with the recorded spectra. A very good agreement is found between the experimental and theoretical spectra. The Raman spectra are also shown to be less affected by the change of configuration than the VROA spectra. Nevertheless, by studying the overlap between the theoretical Raman spectra, we show clear relationships between the spectral fingerprints and the structures displaying a mixture of the TGTGTGTG conformation of the (4R,6s,8S)-PMU (isotactic compound) with the TTTTTTTT conformation of the (4R,6r,8S)-PMU (syndiotactic compound). Then, the fingerprints of the VROA spectra of the five conformers of the (4R,8R)-PMU have been related to the fingerprints of the regular (TG)(N) isotactic compound as a function of the torsion angles. Since the (TT)(N) syndiotactic compound has no VROA signatures, the VROA spectroscopy is very sensitive to the helical structures, as demonstrated here.

Correlation between surface phonon mode and luminescence in nanocrystalline CdS thin films: An effect of ion beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pragati, E-mail: pkumar.phy@gmail.com; Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly 243 005, Uttar Pradesh (India); Saxena, Nupur; Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

2014-07-28

The influence of swift heavy ion irradiation (SHII) on surface phonon mode (SPM) and green emission in nanocrystalline CdS thin films grown by chemical bath deposition is studied. The SHII of nanocrystalline CdS thin films is carried out using 70 MeV Ni ions. The micro Raman analysis shows that asymmetry and broadening in fundamental longitudinal optical (LO) phonon mode increases systematically with increasing ion fluence. To analyze the role of phonon confinement, spatial correlation model (SCM) is fitted to the experimental data. The observed deviation of SCM to the experimental data is further investigated by fitting the micro Raman spectra using two Lorentzian line shapes. It is found that two Lorentzian functions (LFs) provide better fitting than SCM fitting and facilitate to identify the contribution of SPM in the observed distortion of LO mode. The behavior of SPM as a function of ion fluence is studied to correlate the observed asymmetry (Γ{sub a}/Γ{sub b}) and full width at half maximum of LO phonon mode and to understand the SHII induced enhancement of SPM. The ion beam induced interstitial and surface state defects in thin films, as observed by photoluminescence (PL) spectroscopy studies, may be the underlying reason for enhancement in SPM. PL studies also show enhancement in green luminescence with increase in ion fluence. PL analysis reveals that the variation in population density of surface state defects after SHII is similar to that of SPM. The correlation between SPM and luminescence and their dependence on ion irradiation fluence is explained with the help of thermal spike model.

Novel Chiroptical Analysis of Hemoglobin by Surface Enhanced Resonance Raman Optical Activity Spectroscopy

DEFF Research Database (Denmark)

Brazhe, Nadezda; Brazhe, Alexey; Sosnovtseva, Olga

2010-01-01

The metalloprotein hemoglobin (Hb) was studied using surface enhanced resonance Raman spectroscopy (SERRS) and surface enhanced resonance Raman optical activity (SERROA). The SERROA results are analyzed and compared with the SERRS, and the later to the resonance Raman (RRS) performed on Hb...

Raman spectra of Hg-based superconductors: Effect of oxygen defects

International Nuclear Information System (INIS)

Zhou, X.; Cardona, M.; Chu, C.W.; Lin, Q.M.; Loureiro, S.M.; Marezio, M.

1996-01-01

Polarized micro-Raman scattering measurements have been performed on the five members of the HgBa 2 Ca n-1 Cu n O 2n+2+δ (n=1, 2, 3, 4, and 5) high-T c superconductor family. A systematic evolution of the spectrum, which mainly involves oxygen-related phonons around 590, 570, 540, and 470 cm -1 , with an increasing number of CuO 2 layers, has been observed. Local laser annealing measurements clearly demonstrate that all these phonons are closely related to interstitial oxygen in the HgO δ planes. The origin of the spectrum evolution with the number of CuO 2 layers lies in the variation of interstitial oxygen content. copyright 1996 The American Physical Society

Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

Directory of Open Access Journals (Sweden)

Po-Hsun Shih

2017-10-01

Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

Structure, phonons and related properties in zinc-IV-nitride (IV = silicon, germanium, tin), scandium nitride, and rare-earth nitrides

Science.gov (United States)

Paudel, Tula R.

This thesis presents a study of the phonons and related properties in two sets of nitride compounds, whose properties are until now relatively poorly known. The Zn-IV-N2 group of compounds with the group IV elements Si, Ge and Sn, form a series analogous to the well known III-N nitride series with group III element Al, Ga, In. Structurally, they can be derived by doubling the period of III-V compounds in the plane in two directions and replacing the group-III elements with Zn and a group-IV element in a particular ordered pattern. Even though they are similar to the well-known III-V nitride compounds, the study of the properties of these materials is in its early stages. The phonons in these materials and their relation to the phonons in the corresponding group-III nitrides are of fundamental interest. They are also of practical interest because the phonon related spectra such as infrared absorption and Raman spectroscopy are sensitive to the structural quality of the material and can thus be used to quantify the degree of crystalline perfection of real samples. First-principles calculations of the phonons and related ground state properties of these compounds were carried out using Density Functional Perturbation Theory (DFPT) with the Local Density Approximation (LDA) for exchange and correlation and using a pseudopotential plane wave implementation which was developed by several authors over the last decades. The main focus of our study is on the phonons at the center of the Brillouin zone because the latter are most directly related to commonly used spectroscopies to probe the vibrations in a solid: infrared reflectivity and Raman spectroscopy. For a semiconducting or insulating compound, a splitting occurs between transverse and longitudinal phonons at the Gamma-point because of the long-range nature of electrostatic forces. The concepts required to handle this problem are reviewed. Our discussion emphasizes how the various quantities required are related to

Low-Frequency Raman Modes of 2H-TaSe2 in the Charge Density Wave Phase

Science.gov (United States)

Chowdhury, Sugata; Simpson, J.; Einstein, T. L.; Hight Walker, A. R.; Theoretical Collaboration

With changes in temperatures, tantalum diselenide (2H-TaSe2) , a layered, transition metal chalcogenides (TMD) exhibits unique super-lattice structures. The metallic ground state changes to an incommensurate charge density wave (CDW) state at 122?K followed by a commensurate CDW state at 90?K, and eventually a superconducting state 0.14 K. These phase transitions are driven by strong electron-phonon coupling and favored by the particular form of the Fermi surface of these systems. Here we theoretically studied the structural origin of low-frequency Raman modes of bulk 2H-TaSe2\\ in the CDW phases. Our calculations reveal that changes observed in the Raman modes are associated with the thermal expansion in the basal plane of 2H-TaSe2. The Grüneisen parameters of these two Raman modes increase in the CDW phases. Changes in the lattice parameter ``a'' are large compared to ``c'' which induces strain along the a-axis. We compared our results with experimental data which show low-frequency Raman phonon modes are very sensitive to temperature and are not observed in the metallic room-temperature state. In addition, we found that cation displacement is more than anion in CDW phase. Our results may shed more light on exact nature of the CDW instability and optical properties in this system.

The intermediate phase and low wave number phonon modes in antiferroelectric (Pb{sub 0.97}La{sub 0.02}) (Zr{sub 0.60}Sn{sub 0.40−y}Ti{sub y})O{sub 3} ceramics discovered from temperature dependent Raman spectra

Energy Technology Data Exchange (ETDEWEB)

Ding, Xiaojuan; Guo, Shuang [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Hu, Zhigao, E-mail: zghu@ee.ecnu.edu.cn [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Chen, Xuefeng; Wang, Genshui [Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Dong, Xianlin; Chu, Junhao [Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

2016-05-15

Optical phonons and phase transitions of (Pb{sub 0.97}La{sub 0.02}) (Zr{sub 0.60}Sn{sub 0.40−y}Ti{sub y})O{sub 3} (PLZST 97/2/60/40-100y/100y) ceramics with different compositions have been investigated by x-ray diffraction and temperature dependent Raman spectra. From the temperature dependence of low wavenumber phonon modes, two phase transitions (antiferroelectric orthorhombic to intermediate phase and intermediate phase to paraelectric cubic phase) were detected. The intermediate phase could be the coexistence one of antiferroelectric orthorhombic and ferroelectric rhombohedral phase. In addition, two modes (a soft mode and an anharmonic hopping central mode) were found in the high temperature paraelectric cubic phase. On cooling, the anharmonic hopping central mode splits into two modes in the terahertz range. Moreover, the antiferrodistortive mode appears in the antiferroelectric orthorhombic phase. Based on the analysis, the phase diagram of PLZST ceramics can be well improved. - Highlights: • The evolution of phonon modes in antiferroelectric PLZST ceramics. • An intermediate phase was found between orthorhombic and cubic phase. • The phase diagram of PLZST ceramics can be well improved.

Vibrational properties of SrCu{sub 2}O{sub 2} studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurements

Energy Technology Data Exchange (ETDEWEB)

Even, J., E-mail: jacky.even@insa.rennes.fr [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Pedesseau, L.; Durand, O. [Université Européenne de Bretagne, INSA, FOTON, UMR CNRS 6082, 20 Avenue des Buttes de Coësmes, F-35708 Rennes (France); Modreanu, M. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Huyberechts, G. [FLAMAC, Technologiepark 903, 9052 Zwijnaarde (Belgium); Servet, B. [Thales Research and Technology France, Campus Polytechnique, 1, avenue Augustin Fresnel, 91767 Palaiseau cedex France (France); Chaix-Pluchery, O. [Laboratoire des Matériaux et du Génie Physique, Grenoble INP—Minatec, 3, parvis Louis Néel, BP 257, 38016 Grenoble Cedex 1 (France)

2013-08-31

The SrCu{sub 2}O{sub 2} material is a p-type transparent conductive oxide. A theoretical study of the SrCu{sub 2}O{sub 2} crystal is performed with a state of the art implementation of the Density Functional Theory. The simulated crystal structure is compared with available X-ray diffraction data and previous theoretical modeling. Density Functional Perturbation Theory is used to study the vibrational properties of the SrCu{sub 2}O{sub 2} crystal. A symmetry analysis of the optical phonon eigenvectors at the Brillouin zone center is proposed. The Raman spectra simulated using the derivatives of the dielectric susceptibility, show a good agreement with Raman scattering experimental results. - Highlights: ► The symmetry properties of the optical phonons of the SrCu{sub 2}O{sub 2} crystal are analyzed. ► Born charges and the dynamical matrix are calculated at the Brillouin zone center. ► Density Functional Perturbation Theory (DFPT) is used to compute Raman spectrum. ► DFPT Raman spectrum is compared with experimental results.

Interplay of structure and magnetism in ruthenocuprates: a Raman scattering and dilatometry study

Science.gov (United States)

Fainstein, A.; Ramos, C. A.; Pregliasco, R. G.; Butera, A.; Trodahl, H. J.; Williams, G. V. M.; Tallon, J. L.

2002-07-01

We present a Raman scattering and dilatometry study of polycrystalline samples of the magnetic superconducting ruthenocuprates RuSr 2Gd 2- xCe xCu 2O 10+ δ (RuGd 1222) and RuSr 2GdCu 2O 8 (RuGd 1212). In the Raman spectra a high-temperature diffusive-like laser-tail develops below the magnetic ordering temperature ( TM) into an underdamped peak which shifts up to ˜130 cm-1. A line assigned to O(Ru) phonons hardens, narrows and strengthens strongly below TM. Finally, a phonon peak appears below TM at ˜590 cm-1. These three magnetic-order-dependent features are observed for RuGd 1212 and for RuGd 1222 with x=1.0, but do not appear for x=0.5. Dilatometry measurements, on the other hand, evidence a change of the expansion coefficient at TM. These results point to a structural effect accompanying the magnetic order, and suggest a complex interplay of spin and lattice degrees of freedom in these ruthenocuprates.

Supra-ballistic phonons

International Nuclear Information System (INIS)

Russell, F.M.

1989-05-01

Energetic particles moving with a solid, either from nuclear reactions or externally injected, deposit energy by inelastic scattering processes which eventually appears as thermal energy. If the transfer of energy occurs in a crystalline solid then it is possible to couple some of the energy directly to the nuclei forming the lattice by generating phonons. In this paper the transfer of energy from a compound excited nucleus to the lattice is examined by introducing a virtual particle Π. It is shown that by including a Π in the nuclear reaction a substantial amount of energy can be coupled directly to the lattice. In the lattice this particle behaves as a spatially localized phonon of high energy, the so-called supra-ballistic phonon. By multiple inelastic scattering the supra-ballistic phonon eventually thermalizes. Because both the virtual particle Π and the equivalent supra-ballistic phonon have no charge or spin and can only exist within a lattice it is difficult to detect other than by its decay into thermal phonons. The possibility of a Π removing excess energy from a compound nucleus formed by the cold fusion of deuterium is examined. (Author)

Mapping momentum-dependent electron-phonon coupling and nonequilibrium phonon dynamics with ultrafast electron diffuse scattering

Science.gov (United States)

Stern, Mark J.; René de Cotret, Laurent P.; Otto, Martin R.; Chatelain, Robert P.; Boisvert, Jean-Philippe; Sutton, Mark; Siwick, Bradley J.

2018-04-01

Despite their fundamental role in determining material properties, detailed momentum-dependent information on the strength of electron-phonon and phonon-phonon coupling (EPC and PPC, respectively) across the entire Brillouin zone has remained elusive. Here we demonstrate that ultrafast electron diffuse scattering (UEDS) directly provides such information. By exploiting symmetry-based selection rules and time resolution, scattering from different phonon branches can be distinguished even without energy resolution. Using graphite as a model system, we show that UEDS patterns map the relative EPC and PPC strength through their profound sensitivity to photoinduced changes in phonon populations. We measure strong EPC to the K -point TO phonon of A1' symmetry (K -A1' ) and along the entire TO branch between Γ -K , not only to the Γ -E2 g phonon. We also determine that the subsequent phonon relaxation of these strongly coupled optical phonons involve three stages: decay via several identifiable channels to TA and LA phonons (1 -2 ps), intraband thermalization of the non-equilibrium TA/LA phonon populations (30 -40 ps) and interband relaxation of the TA/LA modes (115 ps). Combining UEDS with ultrafast angle-resolved photoelectron spectroscopy will yield a complete picture of the dynamics within and between electron and phonon subsystems, helping to unravel complex phases in which the intertwined nature of these systems has a strong influence on emergent properties.

Understanding photon sideband statistics and correlation for determining phonon coherence

Science.gov (United States)

Ding, Ding; Yin, Xiaobo; Li, Baowen

2018-01-01

Generating and detecting coherent high-frequency heat-carrying phonons have been topics of great interest in recent years. Although there have been successful attempts in generating and observing coherent phonons, rigorous techniques to characterize and detect phonon coherence in a crystalline material have been lagging compared to what has been achieved for photons. One main challenge is a lack of detailed understanding of how detection signals for phonons can be related to coherence. The quantum theory of photoelectric detection has greatly advanced the ability to characterize photon coherence in the past century, and a similar theory for phonon detection is necessary. Here, we reexamine the optical sideband fluorescence technique that has been used to detect high-frequency phonons in materials with optically active defects. We propose a quantum theory of phonon detection using the sideband technique and found that there are distinct differences in sideband counting statistics between thermal and coherent phonons. We further propose a second-order correlation function unique to sideband signals that allows for a rigorous distinction between thermal and coherent phonons. Our theory is relevant to a correlation measurement with nontrivial response functions at the quantum level and can potentially bridge the gap of experimentally determining phonon coherence to be on par with that of photons.

Optimizing phonon space in the phonon-coupling model

Science.gov (United States)

Tselyaev, V.; Lyutorovich, N.; Speth, J.; Reinhard, P.-G.

2017-08-01

We present a new scheme to select the most relevant phonons in the phonon-coupling model, named here the time-blocking approximation (TBA). The new criterion, based on the phonon-nucleon coupling strengths rather than on B (E L ) values, is more selective and thus produces much smaller phonon spaces in the TBA. This is beneficial in two respects: first, it curbs the computational cost, and second, it reduces the danger of double counting in the expansion basis of the TBA. We use here the TBA in a form where the coupling strength is regularized to keep the given Hartree-Fock ground state stable. The scheme is implemented in a random-phase approximation and TBA code based on the Skyrme energy functional. We first explore carefully the cutoff dependence with the new criterion and can work out a natural (optimal) cutoff parameter. Then we use the freshly developed and tested scheme for a survey of giant resonances and low-lying collective states in six doubly magic nuclei looking also at the dependence of the results when varying the Skyrme parametrization.

Raman spectroscopy and effective dielectric function in PLZT x/40/60

Czech Academy of Sciences Publication Activity Database

Buixaderas, Elena; Gregora, Ivan; Kamba, Stanislav; Petzelt, Jan; Kosec, M.

2008-01-01

Roč. 20, č. 34 (2008), 345229/1-345229/10 ISSN 0953-8984 R&D Projects: GA AV ČR IAA100100701; GA AV ČR KAN301370701; GA ČR(CZ) GA202/06/0403 Institutional research plan: CEZ:AV0Z10100520 Keywords : PLZT * Raman and Infrared spectroscopies * phonons * effective medium approximation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.900, year: 2008

Phononic crystals fundamentals and applications

CERN Document Server

Adibi, Ali

2016-01-01

This book provides an in-depth analysis as well as an overview of phononic crystals. This book discusses numerous techniques for the analysis of phononic crystals and covers, among other material, sonic and ultrasonic structures, hypersonic planar structures and their characterization, and novel applications of phononic crystals. This is an ideal book for those working with micro and nanotechnology, MEMS (microelectromechanical systems), and acoustic devices. This book also: Presents an introduction to the fundamentals and properties of phononic crystals Covers simulation techniques for the analysis of phononic crystals Discusses sonic and ultrasonic, hypersonic and planar, and three-dimensional phononic crystal structures Illustrates how phononic crystal structures are being deployed in communication systems and sensing systems.

Squeezing, photon bunching, photon antibunching and nonclassical photon statistics in degenerate hyper Raman processes

International Nuclear Information System (INIS)

Sen, Biswajit; Mandal, Swapan

2007-01-01

An initially prepared coherent state coupled to a second-order nonlinear medium is responsible for stimulated and spontaneous hyper Raman processes. By using an intuitive approach based on perturbation theory, the Hamiltonian corresponding to the hyper Raman processes is analytically solved to obtain the temporal development of the field operators. It is true that these analytical solutions are valid for small coupling constants. However, the interesting part is that these solutions are valid for reasonably large time. Hence, the present analytical solutions are quite general and are fresh compared to those solutions under short-time approximations. By exploiting the analytical solutions of field operators for various modes, we investigate the squeezing, photon antibunching and nonclassical photon statistics for pure modes of the input coherent light responsible for hyper Raman processes. At least in one instance (stimulated hyper Raman processes for vibration phonon mode), we report the simultaneous appearance of classical (photon bunching) and nonclassical (squeezing) effects of the radiation field responsible for hyper Raman processes

Electron Raman scattering in quantum well wires

International Nuclear Information System (INIS)

Zhao Xiangfu; Liu Cuihong

2007-01-01

Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T=0K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as a function of a scattering frequency and the cylindrical radius. Electron states are confined within a QWW. Single parabolic conduction and valence bands are assumed. The selection rules are studied. Singularities in the spectra are interpreted for various cylindrical radii. ERS discussed here can provide direct information about the electron band structure of the system

Raman scattering in cuprate superconductors : an analysis in the spin bag model

International Nuclear Information System (INIS)

Behera, S.N.; Gaitonde, D.M.

1992-01-01

The spin bag model for the high temperature superconductivity (SC) in the cuprates is reformulated, so that the spin density wave (SDW) collective mode mediated pairing interaction between the doped charge carriers, has a formal similarity to the usual phonon mediated BCS mechanism. The collective modes of the spin bag superconductor are calculated and the spectral density function for the amplitude mode is plotted. The self energy and the spectral density function of an optic phonon are calculated in the spin bag superconducting state. The spectral density function does not couple to the SDW-amplitude mode. A low frequency is shown to harden while the high frequency (greater than the SC-gap) one softens; which are features in qualitative agreement with the behaviour seen in the Raman data. When the phonon frequency is larger than the SC-gap, its spectral function shows a low frequency weak peak, attributed to the SC-gap excitation which is not observed experimentally. (author). 21 refs., 3 figs

Theory of the Influence of Phonon-Phonon and Electron-Phonon Interactions on the Scattering of Neutrons by Crystals

International Nuclear Information System (INIS)

Kokkedee, J.J.J.

1963-01-01

As predicted by harmonic theory the coherent inelastic spectrums of neutrons, scattered by a single, non-conducting crystal, for a particular angle of scattering consists of a number of delta-function peaks superposed on a continuous background. The peaks correspond to one-phonon processes in which one phonon is absorbed or emitted by the neutron; the background arises from multi-phonon processes. When anharmonic forces (phonon-phonon interactions) are present, the delta-function peaks are broadened into finite peaks, while their central frequencies are shifted with respect to the harmonic values. In the case of a metal there is in addition to phonon-phonon interactions an interaction between phonons and conduction electrons, which also gives a contribution to the displacement and broadening oftheone-phononpeaks. Continuing earlier work of Van Hove (sho considered the relatively simple case of a non-conductin crystal in its ground state (T = 0 o K) ), we have studied the shifts and widths of the scattering peaks as a 'result of the above-mentioned interactions by means of many particle perturbation theory, making extensive use of diagram techniques. Prerequisite to the entire discussion is the assumption that, independent of the strength of the interactions, the width of each peak is small compared to the value of the frequency at its centre; only then the peaks can be considered as being well defined with respect to the background to higher order in the interactions. This condition is expected to be fulfilled for temperatures which are not too high and values of the phonon wave vector which are not too large. Our procedure yields closed formulae for the partial scattering function describing the peaks, which can be evaluated to arbitrarily high accuracy. In particular an expansion for calculating the line shift and line width in powers of u/d and in terms of simple connected diagrams is obtained (u is an average atomic or ionic displacement, d is the smallest

Raman scattering signatures of the unusual vibronic interaction of molecules in liquid helium-3

Energy Technology Data Exchange (ETDEWEB)

Tehver, I., E-mail: imbi.tehver@ut.ee [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Benedek, G. [Donostia International Physics Center (DIPC) and University of the Basque Country (EHU), Paseo de Lardizabal 4, 20018 Donostia/San Sebastian (Spain); Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Hizhnyakov, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia)

2015-10-16

Highlights: • Theory of resonance Raman scattering (RRS) of molecules in {sup 3}He liquid is proposed. • Fermi excitations give essential contribution to RRS. • RRS spectra of glyoxal molecule in {sup 3}He droplets are calculated. - Abstract: Light scattering in quantum liquid helium-3 may involve a unique mechanism – the creation and annihilation of atom excitations across the Fermi level. The density of states of particle–hole excitations in the low-energy limit is strongly enhanced as compared to that of collective excitations of phonons in helium-3. This makes possible to directly observe Fermi excitations in the resonant Raman scattering (RRS) by {sup 3}He droplets doped by impurity molecules. The RRS spectra essentially depend on the excitation frequency. In case of excitation in the anti-Stokes side of absorption the first order RRS is directly determined by the particle–hole excitations in the vicinity of the impurity molecule and the contribution of phonons mainly given by the localized spherical vibration. The calculations are made for a {sup 3}He droplet doped by a glyoxal molecule.

Phonon operators for deformed nuclei

International Nuclear Information System (INIS)

Solov'ev, V.G.

1982-01-01

The mathematical formalism with the phonon operators independent of the signature of the angular momentum projection turns out to be inadequate for describing excited states of deformed nuclei. New phonon operators are introduced which depend on the signature of the angular momentum projection on the symmetry axis of a deformed nucleus. It is shown that the calculations with the new phonons take correctly into account the Pauli principle in two-phonon components of wave functions. The results obtained differ from those given by the phonons independent of the signature of the angular momentum projection. The new phonons must be used in deformed nuclei at taking systematically the Pauli principle into account and in calculations involving wave functions of excited states having components with more than one-phonon operator

Enhancing of optic phonon contribution in hydrodynamic phonon transport

Science.gov (United States)

de Tomas, C.; Cantarero, A.; Lopeandia, A. F.; Alvarez, F. X.

2015-10-01

In the framework of the kinetic-collective model of phonon heat transport, we analyze how each range of the phonon frequency spectrum contributes to the total thermal conductivity both in the macro and the nanoscale. For this purpose, we use two case study samples: naturally occurring bulk silicon and a 115 nm of diameter silicon nanowire. We show that the contribution of high-energy phonons (optic branches) is non-negligible only when N-collisions are strongly present. This contribution increases when the effective size of the sample decreases, and it is found to be up to a 10% at room temperature for the 115 nm nanowire, corroborating preliminar ab-initio predictions.

Phonon properties of americium phosphide

Energy Technology Data Exchange (ETDEWEB)

Arya, B. S., E-mail: bsarya13@yahoo.com [Department of Physics, Govt. Narmada P G College, Hoshangabad -461001 (India); Aynyas, Mahendra [Department of Physics, C. S. A. Govt. P. G. College Sehore-46601 (India); Sanyal, S. P. [Department of Physics, Barkatullah University, Bhopal-462026 (India)

2016-05-23

Phonon properties of AmP have been studied by using breathing shell models (BSM) which includes breathing motion of electrons of the Am atoms due to f-d hybridization. The phonon dispersion curves, specific heat calculated from present model. The calculated phonon dispersion curves of AmP are presented follow the same trend as observed in uranium phosphide. We discuss the significance of this approach in predicting the phonon dispersion curves of these compounds and examine the role of electron-phonon interaction.

Phonon operators in deformed nuclei

International Nuclear Information System (INIS)

Soloviev, V.G.

1981-01-01

For the description of the excited states in deformed nuclei new phonon operators are introduced, which depend on the sign of the angular momentum projection onto the symmetry axis of a deformed nucleus. In the calculations with new phonons the Pauli principle is correctly taken into account in the two-phonon components of the wave functions. There is a difference in comparison with the calculation with phonons independent of the sign of the angular momentum projection. The new phonons should be used in deformed nuclei if the Pauli principle is consistently taken into account and in the calculations with the excited state wave functions having the components with more than one phonon operator [ru

Electron-phonon interactions and the phonon anomaly in β-phase NiTi

International Nuclear Information System (INIS)

Zhao, G.L.; Harmon, B.N.

1993-01-01

The electronic structure of β-phase NiTi has been calculated using a first-principles linear-combination-of-atomic-orbitals method. The resulting band structure was fitted with a nonorthogonal tight-binding Hamiltonian from which electron-phonon matrix elements were evaluated. The soft phonon near Q 0 =(2/3, 2) / (3 ,0)π/a, which is responsible for the premartensitic phase transition in β-phase NiTi, is found to arise from the strong electron-phonon coupling of nested electronic states on the Fermi surface. Thermal vibrations and changes in electronic occupation cause a smearing of the nested features, which in turn cause a hardening of the phonon anomaly

Quasiparticle-phonon nuclear model

International Nuclear Information System (INIS)

Soloviev, V.G.

1977-01-01

The general assumptions of the quasiparticle-phonon model of complex nuclei are given. The choice of the model hamiltonian as an average field and residual forces is discussed. The phonon description and quasiparticle-phonon interaction are presented. The system of basic equations and their approximate solutions are obtained. The approximation is chosen so as to obtain the most correct description of few-quasiparticle components rather than of the whole wave function. The method of strenght functions is presented, which plays a decisive role in practical realization of the quasiparticle-phonon model for the description of some properties of complex nuclei. The range of applicability of the quasiparticle-phonon nuclear model is determined as few-quasiparticle components of the wave functions at low, intermediate and high excitation energies averaged in a certain energy interval

Resonant Raman characterization of InAlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Cros, A.; Cantarero, A.; Pelekanos, N.T.; Georgakilas, A.; Pomeroy, J.; Kuball, M.

2006-01-01

InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In x Al y Ga 1-x-y N. It is shown that the addition of In to the Al y Ga 1-y N alloy diminishes considerably the vibration energy of the A 1 (LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In x Al y Ga 1-x-y N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Resonant Raman characterization of InAlGaN/GaN heterostructures

Energy Technology Data Exchange (ETDEWEB)

Cros, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Pelekanos, N.T.; Georgakilas, A. [Microelectronics Research Group, FORTH/IESL and University of Crete, P.O. Box 1527, 71110 Heraklion, Crete (Greece); Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

2006-06-15

InAlGaN/GaN heterostructures and thin films with In composition ranging from 0.03 to 0.1 are characterized by means of Raman scattering excited at various energies in the ultra violet range, tuning the laser excitation energy through the band gap of In{sub x}Al{sub y}Ga{sub 1-x-y}N. It is shown that the addition of In to the Al{sub y}Ga{sub 1-y}N alloy diminishes considerably the vibration energy of the A{sub 1}(LO) phonon mode. The phonon line is asymmetric on the low energy side, and the asymmetry increases with In content, while the main peak shifts to lower energies. A shift of the phonon energy has also been observed when the excitation energy is close to the absorption edge of the In{sub x}Al{sub y}Ga{sub 1-x-y}N layer. The nature of this shift is discussed in relation with intrinsic and extrinsic inhomogeneities in the quaternary alloy. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An experimental and theoretical investigation of phonons and lattice instabilities in metastable decompressed SrGeO sub 3 perovskite

CERN Document Server

Grzechnik, A; Wolf, G H; McMillan, P F

1998-01-01

We report detailed Raman and IR spectroscopic measurements for the decompressed high-pressure perovskite phase of SrGeO sub 3. The appearance of a first-order Raman spectrum and slight splittings in the infrared bands suggest that the symmetry of the recovered metastable perovskite phase is lowered from Pm3m. This interpretation is fully supported by first-principles LDA calculations using the LAPW method, which indicate a small tetragonal distortion. The static lattice energy is lowered by 3.3 meV (per formula unit) by allowing rotational relaxation of the GeO sub 6 octahedra. The calculations permit a reliable assignment of the zone centre phonon modes of SrGeO sub 3 perovskite. The calculated pressure dependence of the ferroic IR-active modes is in excellent agreement with our measured data and reveals an incipient soft-mode behaviour in the tension regime. Further calculations of the GeO sub 6 unit as a function of octahedral volume reveal instabilities to local off-centre Ge sup 4 sup + displacements as ...

Vacuum phonon tunneling.

Science.gov (United States)

Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

2010-10-15

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

Electronic structures and abnormal phonon behaviors of cobalt-modified Na0.5Bi0.5TiO3-6%BaTiO3 single crystals

Science.gov (United States)

Huang, T.; Zhang, P.; Xu, L. P.; Chen, C.; Zhang, J. Z.; Hu, Z. G.; Luo, H. S.; Chu, J. H.

2016-10-01

Optical properties, electronic structures, and structural variations of x wt% cobalt (Co) doped Na0.5Bi0.5TiO3-6%BaTiO3 (x=0%, 0.5%, 0.8%) single crystals have been studied by temperature-dependent optical ellipsometry and Raman spectra from 250 to 650 K. Based on the temperature evolution of electronic transitions (Ecp1 and Ecp2) and the phonon modes involving Ti-O vibrations, two critical temperature points exhibit an increasing trend with Co dopants, which are related to structural variations for ferroelectric to anti-ferroelectric, and anti-ferroelectric to paraelectric transition, respectively. Additionally, distinguishing abnormal phonon behaviors can be observed from Raman spectra for the crystal of x=0.5% and 0.8%, which show reverse frequency shift of the modes involving Ti-O vibration. It can be ascribed to different relative concentration of Co2+ and Co3+ in the crystals, which has been confirmed by X-ray Photoelectron Spectroscopy data.

Electronic structures and abnormal phonon behaviors of cobalt-modified Na0.5Bi0.5TiO3-6%BaTiO3 single crystals

Directory of Open Access Journals (Sweden)

T. Huang

2016-10-01

Full Text Available Optical properties, electronic structures, and structural variations of x wt% cobalt (Co doped Na0.5Bi0.5TiO3-6%BaTiO3 (x=0%, 0.5%, 0.8% single crystals have been studied by temperature-dependent optical ellipsometry and Raman spectra from 250 to 650 K. Based on the temperature evolution of electronic transitions (Ecp1 and Ecp2 and the phonon modes involving Ti-O vibrations, two critical temperature points exhibit an increasing trend with Co dopants, which are related to structural variations for ferroelectric to anti-ferroelectric, and anti-ferroelectric to paraelectric transition, respectively. Additionally, distinguishing abnormal phonon behaviors can be observed from Raman spectra for the crystal of x=0.5% and 0.8%, which show reverse frequency shift of the modes involving Ti-O vibration. It can be ascribed to different relative concentration of Co2+ and Co3+ in the crystals, which has been confirmed by X-ray Photoelectron Spectroscopy data.

Analysis of MBE-grown II-VI hetero-interfaces and quantum-dots by Raman spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Bass, Utz

2012-10-16

The material system of interest in this thesis are II-VI-semiconductors. The first part of this thesis focuses on the formation of self-assembled CdSe-based quantum dots (QD) on ZnSe. The lattice constants of ZnSe and CdSe differ as much as about 7% and therefore a CdSe layer grown on top of ZnSe experiences a huge strain. The aspired strain relief constitutes in the self-assembly of QDs (i.e. a roughened layer structure). Additionally, this QD layer is intermixed with Zn as this is also a possibility to decrease the strain in the layer. For CdSe on ZnSe, in Molecular Beam Epitaxy (MBE), various QD growth procedures were analysed with respect to the resulting Cd-content of the non-stoichiometric ternary (Zn,Cd)Se. The evaluation was performed by Raman Spectroscopy as the phonon frequency depends on the Cd-content. The second part of the thesis emphasis on the interface properties of n-ZnSe on n-GaAs. Different growth start procedures of the ZnSe epilayer may lead to different interface configurations with characteristic band-offsets and carrier depletion layer widths. The analysis is mainly focused on the individual depletion layer widths in the GaAs and ZnSe. This non-destructive analysis is performed by evaluating the Raman signal which comprises of phonon scattering from the depleted regions and coupled plasmon-phonon scattering from regions with free carriers.

Analysis of MBE-grown II-VI hetero-interfaces and quantum-dots by Raman spectroscopy

International Nuclear Information System (INIS)

Bass, Utz

2012-01-01

The material system of interest in this thesis are II-VI-semiconductors. The first part of this thesis focuses on the formation of self-assembled CdSe-based quantum dots (QD) on ZnSe. The lattice constants of ZnSe and CdSe differ as much as about 7% and therefore a CdSe layer grown on top of ZnSe experiences a huge strain. The aspired strain relief constitutes in the self-assembly of QDs (i.e. a roughened layer structure). Additionally, this QD layer is intermixed with Zn as this is also a possibility to decrease the strain in the layer. For CdSe on ZnSe, in Molecular Beam Epitaxy (MBE), various QD growth procedures were analysed with respect to the resulting Cd-content of the non-stoichiometric ternary (Zn,Cd)Se. The evaluation was performed by Raman Spectroscopy as the phonon frequency depends on the Cd-content. The second part of the thesis emphasis on the interface properties of n-ZnSe on n-GaAs. Different growth start procedures of the ZnSe epilayer may lead to different interface configurations with characteristic band-offsets and carrier depletion layer widths. The analysis is mainly focused on the individual depletion layer widths in the GaAs and ZnSe. This non-destructive analysis is performed by evaluating the Raman signal which comprises of phonon scattering from the depleted regions and coupled plasmon-phonon scattering from regions with free carriers.

Four-Wave Optical Parametric Amplification in a Raman-Active Gas

Directory of Open Access Journals (Sweden)

Yuichiro Kida

2015-08-01

Full Text Available Four-wave optical parametric amplification (FWOPA in a Raman-active medium is experimentally investigated by use of an air-filled hollow fiber. A femtosecond pump pulse shorter than the period of molecular motion excites the coherent molecular motion of the Raman-active molecules during the parametric amplification of a signal pulse. The excited coherent motion modulates the frequency of the signal pulse during the parametric amplification, and shifts it to lower frequencies. The magnitude of the frequency redshift depends on the pump intensity, resulting in intensity-dependent spectral characteristics that are different from those in the FWOPA induced in a noble-gas-filled hollow fiber.

Coherent generation of symmetry-forbidden phonons by light-induced electron-phonon interactions in magnetite

Science.gov (United States)

Borroni, S.; Baldini, E.; Katukuri, V. M.; Mann, A.; Parlinski, K.; Legut, D.; Arrell, C.; van Mourik, F.; Teyssier, J.; Kozlowski, A.; Piekarz, P.; Yazyev, O. V.; Oleś, A. M.; Lorenzana, J.; Carbone, F.

2017-09-01

Symmetry breaking across phase transitions often causes changes in selection rules and emergence of optical modes which can be detected via spectroscopic techniques or generated coherently in pump-probe experiments. In second-order or weakly first-order transitions, fluctuations of the ordering field are present above the ordering temperature, giving rise to intriguing precursor phenomena, such as critical opalescence. Here, we demonstrate that in magnetite (Fe3O4 ) light excitation couples to the critical fluctuations of the charge order and coherently generates structural modes of the ordered phase above the critical temperature of the Verwey transition. Our findings are obtained by detecting coherent oscillations of the optical constants through ultrafast broadband spectroscopy and analyzing their dependence on temperature. To unveil the coupling between the structural modes and the electronic excitations, at the origin of the Verwey transition, we combine our results from pump-probe experiments with spontaneous Raman scattering data and theoretical calculations of both the phonon dispersion curves and the optical constants. Our methodology represents an effective tool to study the real-time dynamics of critical fluctuations across phase transitions.

Normal processes of phonon-phonon scattering and thermal conductivity of germanium crystals with isotopic disorder

CERN Document Server

Kuleev, I G

2001-01-01

The effect of normal processes of the phonon-phonon scattering on the thermal conductivity of the germanium crystals with various isotopic disorder degrees is considered. The phonon pulse redistribution in the normal scattering processes both inside each oscillatory branch (the Simons mechanism) and between various phonon oscillatory branches (the Herring mechanism) is accounted for. The contributions of the longitudinal and cross-sectional phonons drift motion into the thermal conductivity are analyzed. It is shown that the pulse redistribution in the Herring relaxation mechanism leads to essential suppression of the longitudinal phonons drift motion in the isotopically pure germanium crystals. The calculations results of thermal conductivity for the Herring relaxation mechanism agree well with experimental data on the germanium crystals with various isotopic disorder degrees

Charged defects during alpha-irradiation of actinide oxides as revealed by Raman and luminescence spectroscopy

International Nuclear Information System (INIS)

Mohun, R.; Desgranges, L.; Léchelle, J.; Simon, P.; Guimbretière, G.; Canizarès, A.; Duval, F.; Jegou, C.; Magnin, M.; Clavier, N.; Dacheux, N.; Valot, C.; Vauchy, R.

2016-01-01

We have recently evidenced an original Raman signature of alpha irradiation-induced defects in UO 2 . In this study, we aim to determine whether the same signature also exists in different actinide oxides, namely ThO 2 and PuO 2 . Sintered UO 2 and ThO 2 were initially irradiated with 21 MeV He 2+ ions using a cyclotron device and were subjected to an in situ luminescence experiment followed by Raman analysis. In addition, a PuO 2 sample which had accumulated self-irradiation damage due to alpha particles was investigated only by Raman measurement. Results obtained for the initially white ThO 2 showed that a blue color appeared in the irradiated areas as well as luminescence signals during irradiation. However, Raman spectroscopic analysis showed the absence of Raman signature in ThO 2 . In contrast, the irradiated UO 2 and PuO 2 confirmed the presence of the Raman signature but no luminescence peaks were observed. The proposed mechanism involves electronic defects in ThO 2 , while a coupling between electronic defects and phonons is required to explain the Raman spectra for UO 2 and PuO 2 .

Raman microscopic studies of PVD deposited hard ceramic coatings

International Nuclear Information System (INIS)

Constable, C.P.

2000-01-01

PVD hard ceramic coatings grown via the combined cathodic arc/unbalance magnetron deposition process were studied using Raman microscopy. Characteristic spectra from binary, multicomponent, multilayered and superlattice coatings were acquired to gain knowledge of the solid-state physics associated with Raman scattering from polycrystalline PVD coatings and to compile a comprehensive spectral database. Defect-induced first order scattering mechanisms were observed which gave rise to two pronounced groups of bands related to the acoustical (150- 300cm -1 ) and optical (400-7 50cm -1 ) parts of the phonon spectrum. Evidence was gathered to support the theory that the optic modes were mainly due to the vibrations of the lighter elements and the acoustic modes due to the vibrations of the heavier elements within the lattice. A study into the deformation and disordering on the Raman spectral bands of PVD coatings was performed. TiAIN and TiZrN coatings were intentionally damaged via scratching methods. These scratches were then analysed by Raman mapping, both across and along, and a detailed spectral interpretation performed. Band broadening occurred which was related to 'phonon relaxation mechanisms' as a direct result of the breaking up of coating grains resulting in a larger proportion of grain boundaries per-unit-volume. A direct correlation of the amount of damage with band width was observed. Band shifts were also found to occur which were due to the stresses caused by the scratching process. These shifts were found to be the largest at the edges of scratches. The Raman mapping of 'droplets', a defect inherent to PVD deposition processes, found that higher compressive stresses and large amounts of disorder occurred for coating growth onto droplets. Strategies designed to evaluate the ability of Raman microscopy to monitor the extent of real wear on cutting tools were evaluated. The removal of a coating layer and subsequent detection of a base layer proved

Preface: Phonons 2007

Science.gov (United States)

Perrin, Bernard

2007-06-01

logo.jpg" ALT="Conference logo"/> The conference PHONONS 2007 was held 15-20 July 2007 in the Conservatoire National des Arts et Métiers (CNAM) Paris, France. CNAM is a college of higher technology for training students in the application of science to industry, founded by Henri Grégoire in 1794. This was the 12th International Conference on Phonon Scattering in Condensed Matter. This international conference series, held every 3 years, started in France at Sainte-Maxime in 1972. It was then followed by meetings at Nottingham (1975), Providence (1979), Stuttgart (1983), Urbana-Champaign (1986), Heidelberg (1989), Ithaca (1992), Sapporo (1995), Lancaster (1998), Dartmouth (2001) and St Petersburg (2004). PHONONS 2007 was attended by 346 delegates from 37 different countries as follows: France 120, Japan 45, Germany 25, USA 25, Russia 21, Italy 13, Poland 9, UK 9, Canada 7, The Netherlands 7, Finland 6, Spain 6, Taiwan 6, Greece 4, India 4, Israel 4, Ukraine 4, Serbia 3, South Africa 3, Argentina 2, Belgium 2, China 2, Iran 2, Korea 2, Romania 2, Switzerland 2, and one each from Belarus, Bosnia-Herzegovina, Brazil, Bulgaria, Egypt, Estonia, Mexico, Moldova, Morocco, Saudi Arabia, Turkey. There were 5 plenary lectures, 14 invited talks and 84 oral contributions; 225 posters were presented during three poster sessions. The first plenary lecture was given by H J Maris who presented fascinating movies featuring the motion of a single electron in liquid helium. Robert Blick gave us a review on the new possibilities afforded by nanotechnology to design nano-electomechanical systems (NEMS) and the way to use them to study elementary and fundamental processes. The growing interest for phonon transport studies in nanostructured materials was demonstrated by Arun Majumdar. Andrey Akimov described how ultrafast acoustic solitons can monitor the optical properties of quantum wells. Finally, Maurice Chapellier told us how phonons can help tracking dark matter. These 328

Raman scattering from epitaxial HfN layers grown on MgO(001)

International Nuclear Information System (INIS)

Stoehr, M.; Seo, H.-S.; Petrov, I.; Greene, J.E.

2006-01-01

Stoichiometric single-crystal HfN layers grown on MgO(001) are analyzed by Raman spectroscopy. Second-order Raman scattering predominates, but first-order modes in the acoustic and optical ranges are also visible. The latter indicates that the O h symmetry of NaCl-structure HfN is broken. The large mass difference between Hf and N leads to a correspondingly large separation, 250 cm -1 , between the first-order acoustic and optical bands. Within this gap, four Raman lines are clearly observed. The first three are the second-order transverse acoustic mode (240 cm -1 ), the sum of the first-order transverse and longitudinal acoustic modes (280 cm -1 ), and the second-order longitudinal acoustic mode (325 cm -1 ). The fourth line at 380 cm -1 is identified as the difference between the first-order optical and acoustic modes. The observed first-order Raman scattering, as well as the width of the gap between the first-order acoustic and optical modes, is in good agreement with previously calculated HfN phonon density of states

Ballistic phonon transport in holey silicon.

Science.gov (United States)

Lee, Jaeho; Lim, Jongwoo; Yang, Peidong

2015-05-13

When the size of semiconductors is smaller than the phonon mean free path, phonons can carry heat with no internal scattering. Ballistic phonon transport has received attention for both theoretical and practical aspects because Fourier's law of heat conduction breaks down and the heat dissipation in nanoscale transistors becomes unpredictable in the ballistic regime. While recent experiments demonstrate room-temperature evidence of ballistic phonon transport in various nanomaterials, the thermal conductivity data for silicon in the length scale of 10-100 nm is still not available due to experimental challenges. Here we show ballistic phonon transport prevails in the cross-plane direction of holey silicon from 35 to 200 nm. The thermal conductivity scales linearly with the length (thickness) even though the lateral dimension (neck) is as narrow as 20 nm. We assess the impact of long-wavelength phonons and predict a transition from ballistic to diffusive regime using scaling models. Our results support strong persistence of long-wavelength phonons in nanostructures and are useful for controlling phonon transport for thermoelectrics and potential phononic applications.

Raman scattering by hot and thermal polaritons in crystal quartz

Energy Technology Data Exchange (ETDEWEB)

Bogani, F.; Colocci, M.; Neri, M.; Querzoli, R.

1984-11-01

Nonlinear mixing of IR and visible radiation, i.e. coherent Raman scattering by polaritons driven by a CO/sub 2/ laser, has been used to obtain the dispersion curve and its width in q-space of the polariton associated to the E-phonon at 1065 cm/sup -1/ in crystal quartz. It is shown in this paper that a direct method to determine independently, with high precision, the refractive index and absorbance of a crystal can be obtained in this way. The results are compared with accurate data obtained from Raman scattering by polaritions in thermal equilibrium and very good agreement is found between the two measurements. It is finally shown that nonlinear-mixing techniques turn out to be completely consistent with the simple picture of scattering of light by hot polaritons.

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

OpenAIRE

Yanli Liu; Xifeng Yang; Dunjun Chen; Hai Lu; Rong Zhang; Youdou Zheng

2015-01-01

The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV) near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO) phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with th...

Phonon dispersion in vanadium

International Nuclear Information System (INIS)

Ivanov, A.S.; Rumiantsev, A.Yu.

1999-01-01

Complete text of publication follows. Phonon dispersion curves in Vanadium metal are investigated by neutron inelastic scattering using three-axis spectrometers. Due to extremely low coherent scattering amplitude of neutrons in natural isotope mixture of vanadium the phonon frequencies could be determined in the energy range below about 15 meV. Several phonon groups were measured with the polarised neutron scattering set-up. It is demonstrated that the intensity of coherent inelastic scattering observed in the non-spin-flip channel vanishes in the spin-flip channel. The phonon density of states is measured on a single crystal keeping the momentum transfer equal to a vector of reciprocal lattice where the coherent inelastic scattering is suppressed. Phonon dispersion curves in vanadium, as measured by neutron and earlier by X-ray scattering, are described in frames of a charge-fluctuation model involving monopolar and dipolar degrees of freedom. The model parameters are compared for different transition metals with body-centred cubic-structure. (author)

Bandgap measurements and the peculiar splitting of E{sub 2}{sup H} phonon modes of In{sub x}Al{sub 1-x}N nanowires grown by plasma assisted molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Ng, Tien Khee; Prabaswara, Aditya; Ooi, Boon S., E-mail: boon.ooi@kaust.edu.sa [Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Anjum, Dalaver H.; Yang, Yang [Adavanced nanofabrication Imaging and characterization, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; El-Desouki, Munir M. [National Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh 11442-6086 (Saudi Arabia)

2016-07-28

The dislocation free In{sub x}Al{sub 1-x}N nanowires (NWs) are grown on Si(111) by nitrogen plasma assisted molecular beam epitaxy in the temperature regime of 490 °C–610 °C yielding In composition ranges over 0.50 ≤ x ≤ 0.17. We study the optical properties of these NWs by spectroscopic ellipsometry (SE), photoluminescence, and Raman spectroscopies since they possesses minimal strain with reduced defects comparative to the planar films. The optical bandgap measurements of In{sub x}Al{sub 1-x}N NWs are demonstrated by SE where the absorption edges of the NW samples are evaluated irrespective of substrate transparency. A systematic Stoke shift of 0.04–0.27 eV with increasing x was observed when comparing the micro-photoluminescence spectra with the Tauc plot derived from SE. The micro-Raman spectra in the NWs with x = 0.5 showed two-mode behavior for A{sub 1}(LO) phonons and single mode behavior for E{sub 2}{sup H} phonons. As for x = 0.17, i.e., high Al content, we observed a peculiar E{sub 2}{sup H} phonon mode splitting. Further, we observe composition dependent frequency shifts. The 77 to 600 K micro-Raman spectroscopy measurements show that both AlN- and InN-like modes of A{sub 1}(LO) and E{sub 2}{sup H} phonons in In{sub x}Al{sub 1-x}N NWs are redshifted with increasing temperature, similar to that of the binary III group nitride semiconductors. These studies of the optical properties of the technologically important In{sub x}Al{sub 1-x}N nanowires will path the way towards lasers and light-emitting diodes in the wavelength of the ultra-violet and visible range.

The relation of the broad band with the E2g phonon and superconductivity in the Mg(B1-xCx)2 compound

International Nuclear Information System (INIS)

Parisiades, P.; Lampakis, D.; Palles, D.; Liarokapis, E.; Karpinski, J.

2007-01-01

We have carried out an extensive micro-Raman study on Mg(B 1-x C x ) 2 single crystals, for carbon concentrations up to x=0.15. The E 2g symmetry broad band for pure MgB 2 at ∼600cm -1 disappears even for small doping levels (x=0.027) and two well-defined peaks in the high-energy side of this band play a major role in the Raman spectra of the substituted compounds. We propose that a two-mode behavior of the compound might be present, induced by the coupling of the observed phonons with the electronic bands

Electron-phonon interaction and scattering in Si and Ge: Implications for phonon engineering

International Nuclear Information System (INIS)

Tandon, Nandan; Albrecht, J. D.; Ram-Mohan, L. R.

2015-01-01

We report ab-initio results for electron-phonon (e-ph) coupling and display the existence of a large variation in the coupling parameter as a function of electron and phonon dispersion. This variation is observed for all phonon modes in Si and Ge, and we show this for representative cases where the initial electron states are at the band gap edges. Using these e-ph matrix elements, which include all possible phonon modes and electron bands within a relevant energy range, we evaluate the imaginary part of the electron self-energy in order to obtain the associated scattering rates. The temperature dependence is seen through calculations of the scattering rates at 0 K and 300 K. The results provide a basis for understanding the impacts of phonon scattering vs. orientation and geometry in the design of devices, and in analysis of transport phenomena. This provides an additional tool for engineering the transfer of energy from carriers to the lattice

Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2.

Science.gov (United States)

Ling, Xi; Fang, Wenjing; Lee, Yi-Hsien; Araujo, Paulo T; Zhang, Xu; Rodriguez-Nieva, Joaquin F; Lin, Yuxuan; Zhang, Jin; Kong, Jing; Dresselhaus, Mildred S

2014-06-11

Realizing Raman enhancement on a flat surface has become increasingly attractive after the discovery of graphene-enhanced Raman scattering (GERS). Two-dimensional (2D) layered materials, exhibiting a flat surface without dangling bonds, were thought to be strong candidates for both fundamental studies of this Raman enhancement effect and its extension to meet practical applications requirements. Here, we study the Raman enhancement effect on graphene, hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2), by using the copper phthalocyanine (CuPc) molecule as a probe. This molecule can sit on these layered materials in a face-on configuration. However, it is found that the Raman enhancement effect, which is observable on graphene, hBN, and MoS2, has different enhancement factors for the different vibrational modes of CuPc, depending strongly on the surfaces. Higher-frequency phonon modes of CuPc (such as those at 1342, 1452, 1531 cm(-1)) are enhanced more strongly on graphene than that on h-BN, while the lower frequency phonon modes of CuPc (such as those at 682, 749, 1142, 1185 cm(-1)) are enhanced more strongly on h-BN than that on graphene. MoS2 demonstrated the weakest Raman enhancement effect as a substrate among these three 2D materials. These differences are attributed to the different enhancement mechanisms related to the different electronic properties and chemical bonds exhibited by the three substrates: (1) graphene is zero-gap semiconductor and has a nonpolar C-C bond, which induces charge transfer (2) h-BN is insulating and has a strong B-N bond, while (3) MoS2 is semiconducting with the sulfur atoms on the surface and has a polar covalent bond (Mo-S) with the polarity in the vertical direction to the surface. Therefore, the different Raman enhancement mechanisms differ for each material: (1) charge transfer may occur for graphene; (2) strong dipole-dipole coupling may occur for h-BN, and (3) both charge transfer and dipole-dipole coupling may

Noticeable red emission and Raman active modes in nanoscale gadolinium oxyfluoride (Gd{sub 4}O{sub 3}F{sub 6}) systems with Eu{sup 3+} inclusion

Energy Technology Data Exchange (ETDEWEB)

Hazarika, Samiran; Mohanta, Dambarudhar [Tezpur University, Nanoscience and Soft Matter Laboratory, Department of Physics, Tezpur, Assam (India)

2017-05-15

Eu{sup 3+} doped gadolinium oxyfluoride (Gd{sub 4}O{sub 3}F{sub 6}, GOF) nanoscale systems have been synthesized following a modified Pechini method. While exhibiting a tetragonal crystal structure, the GOF nanosystem gave an average crystallite size (d) of ∝21-26 nm. The Lotgering factor (L{sub F}), which is a measure of orientation of crystallites along the preferred direction was found to vary between 0.22 and 0.48. In the photoluminescence spectra, ∝595 and ∝613 nm peaks were identified as magnetically driven ({sup 5}D{sub 0} → {sup 7}F{sub 1}) and electrically driven ({sup 5}D{sub 0} → {sup 7}F{sub 2}) transitions with latter (red emission) being strongly manifested with Eu{sup 3+} doping concentration and intrinsic defects. Moreover, several Raman active modes have been probed in the Raman spectra with low frequency peaks (<300 cm{sup -1}) and moderate frequency peaks (∝481 and 567 cm{sup -1}) assigned to observable vibration of heavy atom Gd-Gd pairs and Gd-O groups, respectively. Apart from manifestation of phononic features, inclusion of Eu{sup 3+} in the host lattice would bring new insight on improving the red emission response prior to concentration quenching. (orig.)

Nonlinear electron-phonon heat exchange

International Nuclear Information System (INIS)

Woods, L.M.; Mahan, G.D.

1998-01-01

A calculation of the energy exchange between phonons and electrons is done for a metal at very low temperatures. We consider the energy exchange due to two-phonon processes. Second-order processes are expected to be important at temperatures less than 1 K. We include two different second-order processes: (i) the Compton-like scattering of phonons, and (ii) the electron-dual-phonon scattering from the second-order electron-phonon interaction. It is found that the Compton-like process contains a singular energy denominator. The singularity is removed by introducing quasiparticle damping. For pure metals we find that the energy exchange depends upon the lifetime of the electrons and it is proportional to the temperature of the lattice as T L 8 . The same calculation is performed for the electron-dual-phonon scattering and it is found that the temperature dependence is T L 9 . The results can be applied to quantum dot refrigerators. copyright 1998 The American Physical Society

Self-consistency in the phonon space of the particle-phonon coupling model

Science.gov (United States)

Tselyaev, V.; Lyutorovich, N.; Speth, J.; Reinhard, P.-G.

2018-04-01

In the paper the nonlinear generalization of the time blocking approximation (TBA) is presented. The TBA is one of the versions of the extended random-phase approximation (RPA) developed within the Green-function method and the particle-phonon coupling model. In the generalized version of the TBA the self-consistency principle is extended onto the phonon space of the model. The numerical examples show that this nonlinear version of the TBA leads to the convergence of results with respect to enlarging the phonon space of the model.

Electron-phonon contribution to the phonon and excited electron (hole) linewidths in bulk Pd

International Nuclear Information System (INIS)

Sklyadneva, I Yu; Leonardo, A; Echenique, P M; Eremeev, S V; Chulkov, E V

2006-01-01

We present an ab initio study of the electron-phonon (e-ph) coupling and its contribution to the phonon linewidths and to the lifetime broadening of excited electron and hole states in bulk Pd. The calculations, based on density-functional theory, were carried out using a linear-response approach in the plane-wave pseudopotential representation. The obtained results for the Eliashberg spectral function α 2 F(ω), e-ph coupling constant λ, and the contribution to the lifetime broadening, Γ e-ph , show strong dependence on both the energy and momentum of an electron (hole) state. The calculation of phonon linewidths gives, in agreement with experimental observations, an anomalously large broadening for the transverse phonon mode T 1 in the Σ direction. In addition, this mode is found to contribute most strongly to the electron-phonon scattering processes on the Fermi surface

Phonon lineshapes in atom-surface scattering

Energy Technology Data Exchange (ETDEWEB)

MartInez-Casado, R [Department of Chemistry, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Sanz, A S; Miret-Artes, S [Instituto de Fisica Fundamental, Consejo Superior de Investigaciones CientIficas, Serrano 123, E-28006 Madrid (Spain)

2010-08-04

Phonon lineshapes in atom-surface scattering are obtained from a simple stochastic model based on the so-called Caldeira-Leggett Hamiltonian. In this single-bath model, the excited phonon resulting from a creation or annihilation event is coupled to a thermal bath consisting of an infinite number of harmonic oscillators, namely the bath phonons. The diagonalization of the corresponding Hamiltonian leads to a renormalization of the phonon frequencies in terms of the phonon friction or damping coefficient. Moreover, when there are adsorbates on the surface, this single-bath model can be extended to a two-bath model accounting for the effect induced by the adsorbates on the phonon lineshapes as well as their corresponding lineshapes.

Second-order Raman spectra of LiHxD1-x crystals

International Nuclear Information System (INIS)

Plekhanov, V.G.

1994-01-01

High-resolution Raman spectra of LiH x D 1-x cubic crystals were measured for the first time in a wide concentration range (0≤x≤1) at room temperature. The results agree well with data on inelastic neutron scattering and direct calculations of the lattice dynamics for LiH and LiD crystals. This allows one to assign the observed spectral features to the phonon excitations in X-, W-, L-, and K-points of the Brillouin zone. Spectra of LiD exhibit the high-frequency maximum with a pronounced doubled structure. This fact and the dependence of the maximum intensity on the excitation laser frequency provide clear evidence that the maximum is due to excitation of LO(Γ)-phonons in pure or mixed crystals. In the x approx-lt 0.4 range, the LO-phonons manifest themselves in the spectra of both pure LiD and mixed LiH x D 1-x crystals, which demonstrates for the first time their two-mode character in this concentration range. This conclusion is in contradiction with predictions of the coherent potential model. In this paper, causes of this conflict are briefly discussed. 36 refs., 5 figs., 2 tabs

Spacetime representation of topological phononics

Science.gov (United States)

Deymier, Pierre A.; Runge, Keith; Lucas, Pierre; Vasseur, Jérôme O.

2018-05-01

Non-conventional topology of elastic waves arises from breaking symmetry of phononic structures either intrinsically through internal resonances or extrinsically via application of external stimuli. We develop a spacetime representation based on twistor theory of an intrinsic topological elastic structure composed of a harmonic chain attached to a rigid substrate. Elastic waves in this structure obey the Klein–Gordon and Dirac equations and possesses spinorial character. We demonstrate the mapping between straight line trajectories of these elastic waves in spacetime and the twistor complex space. The twistor representation of these Dirac phonons is related to their topological and fermion-like properties. The second topological phononic structure is an extrinsic structure composed of a one-dimensional elastic medium subjected to a moving superlattice. We report an analogy between the elastic behavior of this time-dependent superlattice, the scalar quantum field theory and general relativity of two types of exotic particle excitations, namely temporal Dirac phonons and temporal ghost (tachyonic) phonons. These phonons live on separate sides of a two-dimensional frequency space and are delimited by ghost lines reminiscent of the conventional light cone. Both phonon types exhibit spinorial amplitudes that can be measured by mapping the particle behavior to the band structure of elastic waves.

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy.

Science.gov (United States)

Bagnall, Kevin R; Moore, Elizabeth A; Badescu, Stefan C; Zhang, Lenan; Wang, Evelyn N

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E 2 (high), A 1 longitudinal optical (LO), and E 2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy

Science.gov (United States)

Bagnall, Kevin R.; Moore, Elizabeth A.; Badescu, Stefan C.; Zhang, Lenan; Wang, Evelyn N.

2017-11-01

As semiconductor devices based on silicon reach their intrinsic material limits, compound semiconductors, such as gallium nitride (GaN), are gaining increasing interest for high performance, solid-state transistor applications. Unfortunately, higher voltage, current, and/or power levels in GaN high electron mobility transistors (HEMTs) often result in elevated device temperatures, degraded performance, and shorter lifetimes. Although micro-Raman spectroscopy has become one of the most popular techniques for measuring localized temperature rise in GaN HEMTs for reliability assessment, decoupling the effects of temperature, mechanical stress, and electric field on the optical phonon frequencies measured by micro-Raman spectroscopy is challenging. In this work, we demonstrate the simultaneous measurement of temperature rise, inverse piezoelectric stress, thermoelastic stress, and vertical electric field via micro-Raman spectroscopy from the shifts of the E2 (high), A1 longitudinal optical (LO), and E2 (low) optical phonon frequencies in wurtzite GaN. We also validate experimentally that the pinched OFF state as the unpowered reference accurately measures the temperature rise by removing the effect of the vertical electric field on the Raman spectrum and that the vertical electric field is approximately the same whether the channel is open or closed. Our experimental results are in good quantitative agreement with a 3D electro-thermo-mechanical model of the HEMT we tested and indicate that the GaN buffer acts as a semi-insulating, p-type material due to the presence of deep acceptors in the lower half of the bandgap. This implementation of micro-Raman spectroscopy offers an exciting opportunity to simultaneously probe thermal, mechanical, and electrical phenomena in semiconductor devices under bias, providing unique insight into the complex physics that describes device behavior and reliability. Although GaN HEMTs have been specifically used in this study to

Double resonance Raman effects in InN nanowires

Energy Technology Data Exchange (ETDEWEB)

Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

2012-04-15

We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Molecular structures of viruses from Raman optical activity

DEFF Research Database (Denmark)

Blanch, Ewan W.; Hecht, Lutz; Syme, Christopher D.

2002-01-01

A vibrational Raman optical activity (ROA) study of a range of different structural types of virus exemplified by filamentous bacteriophage fd, tobacco mosaic virus, satellite tobacco mosaic virus, bacteriophage MS2 and cowpea mosaic virus has revealed that, on account of its sensitivity to chira......A vibrational Raman optical activity (ROA) study of a range of different structural types of virus exemplified by filamentous bacteriophage fd, tobacco mosaic virus, satellite tobacco mosaic virus, bacteriophage MS2 and cowpea mosaic virus has revealed that, on account of its sensitivity...... (top component) of cowpea mosaic virus from those of the intact middle and bottom-upper components separated by means of a caesium chloride density gradient, the ROA spectrum of the viral RNA was obtained, which revealed that the RNA takes up an A-type single-stranded helical conformation...... and that the RNA conformations in the middle and bottom-upper components are very similar. This information is not available from the X-ray crystal structure of cowpea mosaic virus since no nucleic acid is visible....

The Raman and vibronic activity of intermolecular vibrations in aromatic-containing complexes and clusters

International Nuclear Information System (INIS)

Maxton, P.M.; Schaeffer, M.W.; Ohline, S.M.; Kim, W.; Venturo, V.A.; Felker, P.M.

1994-01-01

Theoretical and experimental results pertaining to the excitation of intermolecular vibrations in the Raman and vibronic spectra of aromatic-containing, weakly bound complexes and clusters are reported. The theoretical analysis of intermolecular Raman activity is based on the assumption that the polarizability tensor of a weakly bound species is given by the sum of the polarizability tensors of its constituent monomers. The analysis shows that the van der Waals bending fundamentals in aromatic--rare gas complexes may be expected to be strongly Raman active. More generally, it predicts strong Raman activity for intermolecular vibrations that involve the libration or internal rotation of monomer moieties having appreciable permanent polarizability anisotropies. The vibronic activity of intermolecular vibrations in aromatic-rare gas complexes is analyzed under the assumption that every vibronic band gains its strength from an aromatic-localized transition. It is found that intermolecular vibrational excitations can accompany aromatic-localized vibronic excitations by the usual Franck--Condon mechanism or by a mechanism dependent on the librational amplitude of the aromatic moiety during the course of the pertinent intermolecular vibration. The latter mechanism can impart appreciable intensity to bands that are forbidden by rigid-molecule symmetry selection rules. The applicability of such rules is therefore called into question. Finally, experimental spectra of intermolecular transitions, obtained by mass-selective, ionization-detected stimulated Raman spectroscopies, are reported for benzene--X (X=Ar, --Ar 2 , N 2 , HCl, CO 2 , and --fluorene), fluorobenzene--Ar and --Kr, aniline--Ar, and fluorene--Ar and --Ar 2 . The results support the conclusions of the theoretical analyses and provide further evidence for the value of Raman methods in characterizing intermolecular vibrational level structures

Sound and heat revolutions in phononics

Science.gov (United States)

Maldovan, Martin

2013-11-01

The phonon is the physical particle representing mechanical vibration and is responsible for the transmission of everyday sound and heat. Understanding and controlling the phononic properties of materials provides opportunities to thermally insulate buildings, reduce environmental noise, transform waste heat into electricity and develop earthquake protection. Here I review recent progress and the development of new ideas and devices that make use of phononic properties to control both sound and heat. Advances in sonic and thermal diodes, optomechanical crystals, acoustic and thermal cloaking, hypersonic phononic crystals, thermoelectrics, and thermocrystals herald the next technological revolution in phononics.

Conformational flexibility of L-alanine zwitterion determines shapes of Raman and Raman optical activity spectral bands

Czech Academy of Sciences Publication Activity Database

Kapitán, Josef; Baumruk, V.; Kopecký ml., V.; Bouř, Petr

2006-01-01

Roč. 110, č. 14 (2006), s. 4689-4696 ISSN 1089-5639 R&D Projects: GA ČR(CZ) GA203/06/0420 Institutional research plan: CEZ:AV0Z40550506 Keywords : Raman optical activity * molecular flexibility * alanine Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.047, year: 2006

Polytypism in n-fatty acids and low-frequency Raman spectra: Stearic acid B form

Science.gov (United States)

Kobayashi, Masamichi; Kobayashi, Tohru; Itoh, Yuzo; Sato, Kiyotaka

1984-03-01

Single crystals of single-layered (mon) and double-layered (orth II) polytypes of stearic acid B form were obtained and their structures were investigated by the x-ray diffraction and vibrational spectroscopic methods. Two polytypes exhibited quite different Raman spectra in the frequency range from 65 to 2 cm-1. The Raman bands appeared as singlets in mon, while they split into doublets with different polarization in orth II through the interlamellar interactions between two successive layers contained in the unit cell. The frequencies of the phonon modes in orth II were found to be lower than the corresponding ones in mon, indicating that orth II (or mon) was the high-temperature (low-temperature) stable form.

Collective vibrational spectra of α- and γ-glycine studied by terahertz and Raman spectroscopy

International Nuclear Information System (INIS)

Shi Yulei; Wang Li

2005-01-01

Terahertz time-domain spectroscopy is used to investigate the absorption and dispersion of polycrystalline α- and γ-glycine in the spectral region 0.5-3.0 THz. The spectra exhibit distinct features in these two crystalline phases. The observed far-infrared responses are attributed to intermolecular vibrational modes mediated by hydrogen bonds. We also measure the Raman spectra of the polycrystalline and dissolved glycine in the frequency range 28-3900 cm -1 . The results show that all the vibrational modes below 200 cm -1 are nonlocalized but are of a collective (phonon-like) nature. Furthermore, the temperature dependence of the Raman spectra of α-glycine agrees with the anharmonicity mechanism of the vibrational potentials

Strain, doping, and disorder effects in GaAs/Ge/Si heterostructures: A Raman spectroscopy investigation

Science.gov (United States)

Mlayah, A.; Carles, R.; Leycuras, A.

1992-01-01

The present work is devoted to a Raman study of GaAs/Ge/Si heterostructures grown by the vapor-phase epitaxy technique. We first show that the GaAs epilayers are submitted to a biaxial tensile strain. The strain relaxation generates misfit dislocations and thus disorder effects which we analyze in terms of translational invariance loss and Raman selection rules violation. The first-order Raman spectra of annealed samples exhibit an unexpected broadband we identify as due to scattering by a coupled LO phonon-damped plasmon mode. This is corroborated by an accurate line-shape analysis which accounts for the recorded spectra and makes evident the presence of free carriers within the GaAs layers. Their density is estimated from the deduced plasmon frequency and also using a method we have presented in a previous work.

On the interplay between phonon-boundary scattering and phonon-point-defect scattering in SiGe thin films

Science.gov (United States)

Iskandar, A.; Abou-Khalil, A.; Kazan, M.; Kassem, W.; Volz, S.

2015-03-01

This paper provides theoretical understanding of the interplay between the scattering of phonons by the boundaries and point-defects in SiGe thin films. It also provides a tool for the design of SiGe-based high-efficiency thermoelectric devices. The contributions of the alloy composition, grain size, and film thickness to the phonon scattering rate are described by a model for the thermal conductivity based on the single-mode relaxation time approximation. The exact Boltzmann equation including spatial dependence of phonon distribution function is solved to yield an expression for the rate at which phonons scatter by the thin film boundaries in the presence of the other phonon scattering mechanisms. The rates at which phonons scatter via normal and resistive three-phonon processes are calculated by using perturbation theories with taking into account dispersion of confined acoustic phonons in a two dimensional structure. The vibrational parameters of the model are deduced from the dispersion of confined acoustic phonons as functions of temperature and crystallographic direction. The accuracy of the model is demonstrated with reference to recent experimental investigations regarding the thermal conductivity of single-crystal and polycrystalline SiGe films. The paper describes the strength of each of the phonon scattering mechanisms in the full temperature range. Furthermore, it predicts the alloy composition and film thickness that lead to minimum thermal conductivity in a single-crystal SiGe film, and the alloy composition and grain size that lead to minimum thermal conductivity in a polycrystalline SiGe film.

Phonon instabilities in NaNbO3

International Nuclear Information System (INIS)

Mishra, S.K.; Gupta, M.K.; Mittal, R.; Chaplot, S.L.

2012-01-01

NaNbO 3 has antiferroelectric structure at room temperature and exhibits unusual complex sequence of temperature and pressure driven structural phase transitions. Temperature dependent measurements from 17 to 1075 K revealed that NaNbO 3 undergoes a series of phase transitions, ranging from non-polar antiferrodistortive to ferroelectric and antiferroelectric in nature. High pressure measurements carried out up to 11 GPa at ambient temperature indicate transition from antiferroelectric to paraelectric phase. These transitions are characterized by appearance and disappearance of superlattice reflections in the powder diffraction patterns. Numerous Raman and infrared measurements are also reported in literature to gain reliable insights into, and deeper understanding of phase transition behavior. The optical measurements are limited to the Brillouin zone centre, which does not give a complete picture of the dynamics. Inelastic neutron scattering and ab-initio calculations were carried out to understand the phase transitions behaviour and their relation to the phonon spectra

Low frequency phononic band structures in two-dimensional arc-shaped phononic crystals

International Nuclear Information System (INIS)

Xu, Zhenlong; Wu, Fugen; Guo, Zhongning

2012-01-01

The low frequency phononic band structures of two-dimensional arc-shaped phononic crystals (APCs) were studied by the transfer matrix method in cylindrical coordinates. The results showed the first phononic band gaps (PBGs) of APCs from zero Hz with low modes. Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials. These properties can be efficiently used in a structure for low frequencies that are forbidden, or in a device that permits a narrow window of frequencies. -- Highlights: ► We report a new class of quasi-periodic hetero-structures, arc-shaped phononic crystals (APCs). ► The results show the first PBGs start with zero Hz with low modes. ► Locally resonant (LR) gaps were obtained with higher-order rotation symmetry, due to LR frequencies corresponding to the speeds of acoustic waves in the materials.

Resonant Raman and FTIR spectra of carbon doped GaN

Science.gov (United States)

Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

2015-03-01

Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

Collective two-phonon states in deformed nuclei

International Nuclear Information System (INIS)

Solov'ev, V.G.; Shirikova, N.Y.

1982-01-01

The Pauli principle in the two-phonon components of the wave functions is taken into account within the framework of the quasiparticle-phonon model of the nucleus with phonon operators depending on the sign of the projection of the angular momentum. The centroid energies of collective two-phonon states in even-even deformed nuclei are calculated and it is shown that the inclusion of the Pauli principle shifts them by 1--3 MeV to higher energies. The shifts of the three-phonon poles due to the inclusion of the Pauli principle in the three-phonon components of the wave functions are calculated. Strong fragmentation of collective two-phonon states whose energy centroids are 3--5 MeV should be expected. It is concluded that collective two-phonon states need not exist in deformed nuclei. The situation with the 168 Er nucleus and the Th and U isotopes is analyzed

Engineering dissipation with phononic spectral hole burning

Science.gov (United States)

Behunin, R. O.; Kharel, P.; Renninger, W. H.; Rakich, P. T.

2017-03-01

Optomechanics, nano-electromechanics, and integrated photonics have brought about a renaissance in phononic device physics and technology. Central to this advance are devices and materials supporting ultra-long-lived photonic and phononic excitations that enable novel regimes of classical and quantum dynamics based on tailorable photon-phonon coupling. Silica-based devices have been at the forefront of such innovations for their ability to support optical excitations persisting for nearly 1 billion cycles, and for their low optical nonlinearity. While acoustic phonon modes can persist for a similar number of cycles in crystalline solids at cryogenic temperatures, it has not been possible to achieve such performance in silica, as silica becomes acoustically opaque at low temperatures. We demonstrate that these intrinsic forms of phonon dissipation are greatly reduced (by >90%) by nonlinear saturation using continuous drive fields of disparate frequencies. The result is a form of steady-state phononic spectral hole burning that produces a wideband transparency window with optically generated phonon fields of modest (nW) powers. We developed a simple model that explains both dissipative and dispersive changes produced by phononic saturation. Our studies, conducted in a microscale device, represent an important step towards engineerable phonon dynamics on demand and the use of glasses as low-loss phononic media.

Freeform Phononic Waveguides

Directory of Open Access Journals (Sweden)

Georgios Gkantzounis

2017-11-01

Full Text Available We employ a recently introduced class of artificial structurally-disordered phononic structures that exhibit large and robust elastic frequency band gaps for efficient phonon guiding. Phononic crystals are periodic structures that prohibit the propagation of elastic waves through destructive interference and exhibit large band gaps and ballistic propagation of elastic waves in the permitted frequency ranges. In contrast, random-structured materials do not exhibit band gaps and favour localization or diffusive propagation. Here, we use structures with correlated disorder constructed from the so-called stealthy hyperuniform disordered point patterns, which can smoothly vary from completely random to periodic (full order by adjusting a single parameter. Such amorphous-like structures exhibit large band gaps (comparable to the periodic ones, both ballistic-like and diffusive propagation of elastic waves, and a large number of localized modes near the band edges. The presence of large elastic band gaps allows the creation of waveguides in hyperuniform materials, and we analyse various waveguide architectures displaying nearly 100% transmission in the GHz regime. Such phononic-circuit architectures are expected to have a direct impact on integrated micro-electro-mechanical filters and modulators for wireless communications and acousto-optical sensing applications.

Diode pumped actively Q-switched Nd:YVO4 self-Raman laser

International Nuclear Information System (INIS)

Su Fufang; Zhang Xingyu; Wang Qingpu; Ding Shuanghong; Jia Peng; Li Shutao; Fan Shuzhen; Zhang Chen; Liu Bo

2006-01-01

By using Nd:YVO 4 as the gain medium and the Raman medium simultaneously, the actively Q-switched operation of the self-Raman Nd:YVO 4 laser at 1176 nm was realized. The output characteristics including the average power, pulse energy and pulse width versus the incident pump power and pulse repetition rate were investigated. At a pulse repetition rate of 20 kHz an average power up to 0.57 W was obtained with the incident pump power of 10.2 W, corresponding to a conversion efficiency of 5.6% with respect to the diode laser input power. Meanwhile, an analysis of the self-Raman Nd:YVO 4 laser was carried out by using the rate equations. The obtained theoretical results were in agreement with the experimental results on the whole

Theoretical investigation of the hyper-Raman scattering in hexagonal semiconductors under two-photon excitation near resonance with the An=2 exciton level

Science.gov (United States)

Semenova, L. E.

2018-04-01

The hyper-Raman scattering of light by LO-phonons under two-photon excitation near resonance with the An=2 exciton level in the wurtzite semiconductors A2B6 was theoretically investigated, taking into account the influence of the complex structure of the top valence band.

Splash, pop, sizzle: Information processing with phononic computing

Directory of Open Access Journals (Sweden)

Sophia R. Sklan

2015-05-01

Full Text Available Phonons, the quanta of mechanical vibration, are important to the transport of heat and sound in solid materials. Recent advances in the fundamental control of phonons (phononics have brought into prominence the potential role of phonons in information processing. In this review, the many directions of realizing phononic computing and information processing are examined. Given the relative similarity of vibrational transport at different length scales, the related fields of acoustic, phononic, and thermal information processing are all included, as are quantum and classical computer implementations. Connections are made between the fundamental questions in phonon transport and phononic control and the device level approach to diodes, transistors, memory, and logic.

Phase transformations in multiferroic Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} ceramics probed by temperature dependent Raman scattering

Energy Technology Data Exchange (ETDEWEB)

Xu, L. P.; Zhang, X. L.; Zhang, J. Z.; Hu, Z. G., E-mail: zghu@ee.ecnu.edu.cn; Chu, J. H. [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Zhang, L. L.; Yu, J. [Functional Material Research Laboratory, Tongji University, Shanghai 200092 (China)

2014-10-28

Optical phonons and phase transitions of Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} (BLFTO, 0.02 ≤ x ≤ 0.12, 0.01 ≤ y ≤ 0.08) ceramics have been investigated by Raman scattering in the temperature range from 80 to 680 K. Four phase transitions around 140, 205, 570, and 640 K can be observed. The Raman modes are sensitive to the spin reorientation around 140 and 205 K, owing to the strong magnon-phonon coupling. The transformation around 570 K is a structural transition from rhombohedral to orthorhombic phase due to an external pressure induced by the chemical substitution. The anomalies of the phonon frequencies near Néel temperature T{sub N} have been discussed in the light of the multiferroicity. Moreover, it was found that the structural transition temperature and T{sub N} of BLFTO ceramics decrease towards room temperature with increasing doping composition as a result of size mismatch between substitution and host cations.

Evidence for anisotropic excitonlike enhancement of the Raman scattering from La2CuO4

International Nuclear Information System (INIS)

Weber, W.H.; Peters, C.R.; Wanklyn, B.M.; Chen, C.; Watts, B.E.

1988-01-01

Polarized Raman studies on oriented single crystals of La 2 CuO 4 yield α/sub z//sub z/ spectra with narrow lines at 429 and 228 cm/sup -1/ that are identified as the two A 1 /sub g/ modes expected for the tetragonal K 2 NiF 4 structure; α/sub x//sub z/ spectra with one line at 228 cm/sup -1/ that has E/sub g/ symmetry; and α/sub x//sub x/ spectra with numerous peaks that are due to normally forbidden phonon excitations. The α/sub x//sub x/ spectra also show strong second-order features, suggesting a highly anisotropic, excitonlike enhancement of the Raman scattering

Analysis of Lattice Thermal Conductivity of Si Considering the Effect of Phonon Dispersion on Three-phonon Processes

Science.gov (United States)

He, Ping; Li, Zhijian

2001-03-01

In this work we present the new relaxation time expressions considering the detailed information of the phonon dispersion. For the three-phonon processes, it is found that only limited types of three-phonon processes are allowed to occur and the attenuation of phonon that conduct heat varies roughly with the fifth power of frequency. By using these expressions, the data of thermal conductivity of bulk silicon is well fitted. And further, the data for thin films of single crystal silicon which cannot be well fitted by the widely used model that proposed by Holland is also well fitted using the new expressions for three-phonon processes and parameters got at the previous step.

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

International Nuclear Information System (INIS)

Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

2011-01-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

Science.gov (United States)

Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

2011-12-01

Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

Raman spectra of MgB2 at high pressure and topological electronic transition

International Nuclear Information System (INIS)

Meletov, K.P.; Kulakov, M.P.; Kolesnikov, N.N.; Arvanitidis, J.; Kourouklis, G.A.

2002-01-01

Raman spectra of the MgB 2 ceramic samples were measured as a function of pressure up to 32 GPa at room temperature. The spectrum at normal conditions contains a very broad peak at ∼ 590 cm -1 related to the E 2g phonon mode. The frequency of this mode exhibits a strong linear dependence in the pressure region from 5 to 18 GPa, whereas beyond this region the slope of the pressure-induced frequency shift is reduced by about a factor of two. The pressure dependence of the phonon mode up to ∼ 5 GPa exhibits a change in the slope as well as a hysteresis effect in the frequency vs. pressure behavior. These singularities in the E 2g mode behavior under pressure support the suggestion that MgB 2 may undergo a pressure-induced topological electronic transition [ru

Raman optical activity study on insulin amyloid- and prefibril intermediate

Czech Academy of Sciences Publication Activity Database

Yamamoto, Shigeki; Watarai, H.

2012-01-01

Roč. 24, č. 2 (2012), s. 97-103 ISSN 0899-0042 Institutional research plan: CEZ:AV0Z40550506 Keywords : raman optical activity * amyloid * fibril * intermediate * insulin Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.718, year: 2012

Electron-phonon coupling from finite differences

Science.gov (United States)

Monserrat, Bartomeu

2018-02-01

The interaction between electrons and phonons underlies multiple phenomena in physics, chemistry, and materials science. Examples include superconductivity, electronic transport, and the temperature dependence of optical spectra. A first-principles description of electron-phonon coupling enables the study of the above phenomena with accuracy and material specificity, which can be used to understand experiments and to predict novel effects and functionality. In this topical review, we describe the first-principles calculation of electron-phonon coupling from finite differences. The finite differences approach provides several advantages compared to alternative methods, in particular (i) any underlying electronic structure method can be used, and (ii) terms beyond the lowest order in the electron-phonon interaction can be readily incorporated. But these advantages are associated with a large computational cost that has until recently prevented the widespread adoption of this method. We describe some recent advances, including nondiagonal supercells and thermal lines, that resolve these difficulties, and make the calculation of electron-phonon coupling from finite differences a powerful tool. We review multiple applications of the calculation of electron-phonon coupling from finite differences, including the temperature dependence of optical spectra, superconductivity, charge transport, and the role of defects in semiconductors. These examples illustrate the advantages of finite differences, with cases where semilocal density functional theory is not appropriate for the calculation of electron-phonon coupling and many-body methods such as the GW approximation are required, as well as examples in which higher-order terms in the electron-phonon interaction are essential for an accurate description of the relevant phenomena. We expect that the finite difference approach will play a central role in future studies of the electron-phonon interaction.

Phonon-induced optical superlattice.

Science.gov (United States)

de Lima, M M; Hey, R; Santos, P V; Cantarero, A

2005-04-01

We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

Hydrostatic pressure and temperature effect on the Raman spectra of the molecular crystal 2-amine-1,3,4-thiadiazole

Science.gov (United States)

de Toledo, T. A.; da Costa, R. C.; Bento, R. R. F.; Pizani, P. S.

2018-03-01

The structural, thermal and vibrational properties of the molecular crystal 2-amine-1,3,4-thiadiazole (ATD) were investigated combining X-ray diffraction, infrared spectroscopy, Raman scattering (in solid and in solution) and thermal analysis as experimental techniques and first principle calculations based on density functional theory using PZ, BLYP in condensed-phase and B3LYP/cc-pVTZ in isolated molecule methods. The structural stability and phonon anharmonicity were also studied using Raman spectroscopy at different temperatures and hydrostatic pressures. A reasonable agreement was obtained between calculated and experimental results. The main difference between experimental and computed structural and vibrational spectra occurred in the intermolecular bond distance Nsbnd H⋯N and stretching modes of NH2. The vibrational spectra were interpreted and assigned based on group theory and functional group analysis assisted by theoretical results, which led to a more comprehensive knowledge about external and internal modes at different thermodynamic conditions. As temperature increases, it was observed the line-width increases and red-shifts, indicating a phonon anharmonicity without a temperature-induced phase transition in the range 10-413 K. However, ATD crystal undergoes a phase transition in the temperature range 413-475 K, as indicated by thermal analysis curve and Raman spectra. Furthermore, increasing pressure from ambient to 3.1 GPa, it was observed the splitting of the external Raman bands centered at 122 cm-1 (at 0.2 GPa), 112 cm-1 (1.1 GPa), 93 cm-1 (2.4 GPa) in two components as well as the appearance of new band near 50 cm-1 at 1.1 GPa, indicating a possible phase-transition. The blue-shift of the Raman bands was associated to anharmonicity of the interatomic potential caused by unit cell contraction.

Effect of doping on the Raman lineshape and intensity of graphene

Science.gov (United States)

Casiraghi, Cinzia; Basko, Denis M.; Ferrari, Andrea C.

2010-03-01

Graphene can be doped by applying a gate voltage [1-2]. Doping strongly affects the G and 2D Raman peaks: i) the G peak upshifts for increasing doping, while its width decreases [1]; ii) the 2D upshifts for p-doping, while it downshifts for n-doping [2]. iii) the ratio between the 2D and G peaks intensity decreases for increasing doping [2]. The 2D intensity is strongly affected by the electron-electron scattering rate, which increases with doping [3]. Similar Raman peaks variations were observed for non-gated samples, as an effect of charged impurities [4]. Here we use the 2D peak intensity variation with doping to extract the electron-phonon scattering rate [3,5]. We note that in non-gated samples, where the Fermi level shift is induced by charged impurities, we can probe the 2D peak dependence much closer to the Dirac point than in gated ones [5]. We find an electron-phonon coupling scattering rate of 60 ps-1 at 2.41 eV excitation energy [3,5]. [4pt] [1] S. Pisana et al, Nature Mat. 6, 198 (2007)[0pt] [2] A. Das et al., Nature Nanotech. 3, 210 (2008)[0pt] [3] D. M. Basko et al. PRB 80, 165413 (2009)[0pt] [4] C. Casiraghi et al., APL 91, 233108 (2007)[0pt] [5] C. Casiraghi, arXiv:0908.4480

Lattice dynamical investigation of the Raman and infrared wave numbers and heat capacity properties of the pyrochlores R2Zr2O7 (R = La, Nd, Sm, Eu)

Science.gov (United States)

Nandi, S.; Jana, Y. M.; Gupta, H. C.

2018-04-01

A short-range electrostatic forcefield model has been applied for the first time to investigate the Raman and infrared wave numbers in pyrochlore zirconates R2Zr2O7 (R3+ = La, Nd, Sm, Eu). The calculations of phonons involve five stretching and four bending force constants in the Wilson GF matrix method. The calculated phonon wave numbers are in reasonable agreement with the observed spectra in infrared and Raman excitation zones for all of these isomorphous compounds. The contributions of force constants to each mode show a similar trend of variation for all of these compounds. Furthermore, to validate the established forcefield model, we calculated the standard thermodynamic functions, e.g., molar heat capacity, entropy and enthalpy, and compared the results with the previous experimental data for each compound. Using the derived wave numbers for the acoustic and optical modes, the total phonon contribution to the heat capacity was calculated for all these zirconate compounds. The Schottky heat capacity contributions were also calculated for the magnetic compounds, Nd2Zr2O7, Sm2Zr2O7 and Eu2Zr2O7, taking account of crystal-field level schemes of the lanthanide ions. The derived total heat capacity and the integrated values of molar entropy and molar enthalpy showed satisfactory correlations at low temperatures with the experimental results available in the literature for these compounds. At higher temperatures, the discrepancies may be caused by the anharmonic effects of vibrations, phonon dispersion, distribution of phonon density of states, etc.

Resolved E-symmetry zone-centre phonons in LiTaO.sub.3./sub. and LiNbO.sub.3./sub..

Czech Academy of Sciences Publication Activity Database

Margueron, S.; Bartasyte, A.; Glazier, A. M.; Simon, Elizabeth; Hlinka, Jiří; Gregora, Ivan; Gleize, J.

2012-01-01

Roč. 111, č. 10 (2012), "104105-1"-"104105-6" ISSN 0021-8979. [International Symposium on Integrated Functionalities (ISIF) /22./. San Juan, Puerto Rico , 13.06.2010-16.06.2010] R&D Projects: GA AV ČR KAN301370701; GA ČR GAP204/10/0616 Institutional research plan: CEZ:AV0Z10100520 Keywords : phonons * infrared and Raman spectroscopy * lithium niobate * lithium tantalate * ferroelectric Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.210, year: 2012

Topological chiral phonons in center-stacked bilayer triangle lattices

Science.gov (United States)

Xu, Xifang; Zhang, Wei; Wang, Jiaojiao; Zhang, Lifa

2018-06-01

Since chiral phonons were found in an asymmetric two-dimensional hexagonal lattice, there has been growing interest in the study of phonon chirality, which were experimentally verified very recently in monolayer tungsten diselenide (2018 Science 359 579). In this work, we find chiral phonons with nontrivial topology in center-stacked bilayer triangle lattices. At the Brillouin-zone corners, (), circularly polarized phonons and nonzero phonon Berry curvature are observed. Moreover, we find that the phonon chirality remain robust with changing sublattice mass ratio and interlayer coupling. The chiral phonons at the valleys are demonstrated in doubler-layer sodium chloride along the [1 1 1] direction. We believe that the findings on topological chiral phonons in triangle lattices will give guidance in the study of chiral phonons in real materials and promote the phononic applications.

Quasiparticles, phonons and beyond. Enlargement the basis of quasiparticle-phonon model

International Nuclear Information System (INIS)

Stoyanov, Ch.

2000-01-01

The version of Quasiparticle-Phonon Model (QPM) which accounts up to three-phonons is discussed. The new basis is used to study the low-lying isovector mode and the low-energy E1 transitions forbidden in the ideal boson picture. The coupling to the continuum is incorporated in the formalism of QPM. The phenomenon of trapping of states is studied in the case of high-lying states with large angular momentum. (author)

Strong Carrier–Phonon Coupling in Lead Halide Perovskite Nanocrystals

Science.gov (United States)

2017-01-01

We highlight the importance of carrier–phonon coupling in inorganic lead halide perovskite nanocrystals. The low-temperature photoluminescence (PL) spectrum of CsPbBr3 has been investigated under a nonresonant and a nonstandard, quasi-resonant excitation scheme, and phonon replicas of the main PL band have been identified as due to the Fröhlich interaction. The energy of longitudinal optical (LO) phonons has been determined from the separation of the zero phonon band and phonon replicas. We reason that the observed LO phonon coupling can only be related to an orthorhombically distorted crystal structure of the perovskite nanocrystals. Additionally, the strength of carrier–phonon coupling has been characterized using the ratio between the intensities of the first phonon replica and the zero-phonon band. PL emission from localized versus delocalized carriers has been identified as the source of the observed discrepancies between the LO phonon energy and phonon coupling strength under quasi-resonant and nonresonant excitation conditions, respectively. PMID:29019652

Anharmonic properties of Raman modes in double wall carbon nano tubes

Energy Technology Data Exchange (ETDEWEB)

Marquina, J. [Universidad de los Andes, Facultad de Ciencias, Centro de Estudios Avanzados en Optica, 5101 Merida (Venezuela, Bolivarian Republic of); Power, Ch.; Gonzalez, J. [Universidad de los Andes, Facultad de Ciencias, Centro de Estudios en Semiconductores, 5101 Merida (Venezuela, Bolivarian Republic of); Broto, J. M. [Universite de Toulouse, Laboratoire National des Champs Magnetiques Intenses, CNRS UPR 3228, 31400 Toulouse (France); Flahaut, E., E-mail: castella@ula.v [Universite Paul Sabatier, Laboratoire de Chimie des Materiaux Inorganiques, UMR CNRS 5085, 31062 Toulouse (France)

2011-07-01

The temperature dependence of the radial breathing modes (RB Ms) and the zone-center tangential optical phonons (G-bands) of double-walled carbon nano tubes has been investigated between 300 and 700 K using Raman scattering. As expected, with increasing temperature, the frequencies of the Raman peaks, including the RB Ms and G-bands downshift simultaneously. We show here that the temperature dependence of the RB Ms can be fitted by a simple linear dependence and different RB Ms have different frequency shifts. We observe a noticeable nonlinearity in the temperature dependence of the G-band associated with the outer semiconducting tube G+ext (s). The deviation from the linear trend is due to the contribution of the third-order anharmonic term in the lattice potential energy with a pure temperature effect. An estimated value of 1.5 for the Grueneisen parameter of the G+ext (s) band was found. (Author)

Mutual interactions of phonons, rotons, and gravity

Science.gov (United States)

Nicolis, Alberto; Penco, Riccardo

2018-04-01

We introduce an effective point-particle action for generic particles living in a zero-temperature superfluid. This action describes the motion of the particles in the medium at equilibrium as well as their couplings to sound waves and generic fluid flows. While we place the emphasis on elementary excitations such as phonons and rotons, our formalism applies also to macroscopic objects such as vortex rings and rigid bodies interacting with long-wavelength fluid modes. Within our approach, we reproduce phonon decay and phonon-phonon scattering as predicted using a purely field-theoretic description of phonons. We also correct classic results by Landau and Khalatnikov on roton-phonon scattering. Finally, we discuss how phonons and rotons couple to gravity, and show that the former tend to float while the latter tend to sink but with rather peculiar trajectories. Our formalism can be easily extended to include (general) relativistic effects and couplings to additional matter fields. As such, it can be relevant in contexts as diverse as neutron star physics and light dark matter detection.

Phonon anomalies in trilayer high-Tc cuprate superconductors

International Nuclear Information System (INIS)

Dubroka, Adam; Munzar, Dominik

2004-01-01

We present an extension of the model proposed recently to account for dramatic chAes below T c (anomalies) of some c-axis polarized infrared-active phonons in bilayer cuprate superconductors, that applies to trilayer high-T c compounds. We discuss several types of phonon anomalies that can occur in these systems and demonstrate that our model is capable of explaining the spectral chAes occurring upon entering the superconducting state in the trilayer compound Tl 2 Ba 2 Ca 2 Cu 3 O 10 . The low-temperature spectra of this compound obtained by Zetterer and coworkers display an additional broad absorption band, similar to the one observed in underdoped YBa 2 Cu 3 O 7-δ and Bi 2 Sr 2 CaCu 2 O 8 . In addition, three phonon modes are strongly anomalous. We attribute the absorption band to the transverse Josephson plasma resonance, similar to that of the bilayer compounds. The phonon anomalies are shown to result from a modification of the local fields induced by the formation of the resonance. The spectral chAes in Tl 2 Ba 2 Ca 2 Cu 3 O 10 are compared with those occurring in Bi 2 Sr 2 Ca 2 Cu 3 O 10 , reported recently by Boris and coworkers

Phonon broadening in high entropy alloys

Science.gov (United States)

Körmann, Fritz; Ikeda, Yuji; Grabowski, Blazej; Sluiter, Marcel H. F.

2017-09-01

Refractory high entropy alloys feature outstanding properties making them a promising materials class for next-generation high-temperature applications. At high temperatures, materials properties are strongly affected by lattice vibrations (phonons). Phonons critically influence thermal stability, thermodynamic and elastic properties, as well as thermal conductivity. In contrast to perfect crystals and ordered alloys, the inherently present mass and force constant fluctuations in multi-component random alloys (high entropy alloys) can induce significant phonon scattering and broadening. Despite their importance, phonon scattering and broadening have so far only scarcely been investigated for high entropy alloys. We tackle this challenge from a theoretical perspective and employ ab initio calculations to systematically study the impact of force constant and mass fluctuations on the phonon spectral functions of 12 body-centered cubic random alloys, from binaries up to 5-component high entropy alloys, addressing the key question of how chemical complexity impacts phonons. We find that it is crucial to include both mass and force constant fluctuations. If one or the other is neglected, qualitatively wrong results can be obtained such as artificial phonon band gaps. We analyze how the results obtained for the phonons translate into thermodynamically integrated quantities, specifically the vibrational entropy. Changes in the vibrational entropy with increasing the number of elements can be as large as changes in the configurational entropy and are thus important for phase stability considerations. The set of studied alloys includes MoTa, MoTaNb, MoTaNbW, MoTaNbWV, VW, VWNb, VWTa, VWNbTa, VTaNbTi, VWNbTaTi, HfZrNb, HfMoTaTiZr.

Contrast and Raman spectroscopy study of single- and few-layered charge density wave material: 2H-TaSe2

Science.gov (United States)

Hajiyev, Parviz; Cong, Chunxiao; Qiu, Caiyu; Yu, Ting

2013-01-01

In this article, we report the first successful preparation of single- and few-layers of tantalum diselenide (2H-TaSe2) by mechanical exfoliation technique. Number of layers is confirmed by white light contrast spectroscopy and atomic force microscopy (AFM). Vibrational properties of the atomically thin layers of 2H-TaSe2 are characterized by micro-Raman spectroscopy. Room temperature Raman measurements demonstrate MoS2-like spectral features, which are reliable for thickness determination. E1g mode, usually forbidden in backscattering Raman configuration is observed in the supported TaSe2 layers while disappears in the suspended layers, suggesting that this mode may be enabled because of the symmetry breaking induced by the interaction with the substrate. A systematic in-situ low temperature Raman study, for the first time, reveals the existence of incommensurate charge density wave phase transition in single and double-layered 2H-TaSe2 as reflected by a sudden softening of the second-order broad Raman mode resulted from the strong electron-phonon coupling (Kohn anomaly). PMID:24005335

Electromagnetic decay of two-phonon states

International Nuclear Information System (INIS)

Catara, F.; Chomaz, Ph.; Van Giai, N.; Paris-11 Univ., 91 - Orsay

1991-01-01

The electromagnetic decay of two-phonon states corresponding to the multi-excitation of giant resonances is studied. The calculations are performed within a boson expansion approach and the elementary modes are constructed in random phase approximation (RPA). The rates for direct transition of two-phonon states to the ground state turn out to be not negligibly smaller than those from the (single) giant resonances. The former transitions are accompanied by a γ-ray whose energy is equal to the sum of the two phonon energies. Thus the detection of such high energy γ-rays could provide a signature of the excitation of two-phonon states. (author) 9 refs., 3 tabs

Characterization of excited electronic states of naphthalene by resonance Raman and hyper-Raman scattering

International Nuclear Information System (INIS)

Bonang, C.C.; Cameron, S.M.

1992-01-01

The first resonance Raman and hyper-Raman scattering from naphthalene are reported. Fourth harmonic of a mode-locked Nd:YAG laser is used to resonantly excite the 1 B 1u + transition, producing Raman spectra that confirm the dominance of the vibronically active ν 28 (b 3g ) mode and the Franck--Condon active a g modes, ν 5 and ν 3 . A synchronously pumped stilbene dye laser and its second harmonic are employed as the excitation sources for hyper-Raman and Raman scattering from the overlapping 1 B 2 u + and 1 A g - states. The Raman spectra indicate that the equilibrium geometry of naphthalene is distorted primarily along ν 5 , ν 8 , and ν 7 normal coordinates upon excitation to 1 B 2 u + . The hyper-Raman spectrum shows that ν 25 (b 2u ) is the mode principally responsible for vibronic coupling between the 1 A g - and 1 B 2u + states. The results demonstrate the advantageous features of resonance hyper-Raman scattering for the case of overlapping one- and two-photon allowed transitions. Calculations based on simple molecular orbital configurations are shown to qualitatively agree with the experimental results

Investigation of resonant Raman scattering in type II GaAs/AlAs superlattices

International Nuclear Information System (INIS)

Choi, H.

2001-01-01

As a consequence of the band alignment in GaAs/AIAs superlattices (SLs) and the indirect nature of bulk AIAs, quantum confinement can be used to engineer a Type II system. This produces an electron population in the AIAs longitudinal (X z ) or transverse (X xy ) zone-edge states, which is separated in both direct and reciprocal space from the hole population in the GaAs zone-centre (Γ) states. This thesis is an investigation of the electronic and vibrational structure of Type II GaAs/AIAs SLs using theoretical models and spectroscopic techniques, with special emphasis on Type II resonant Raman (RR) scattering. The majority of this thesis concerns short-period GaAs/AIAs SLs with X z as the lowest conduction band state. A model of the SL electronic band structure is presented, including the effects of interband Γ-X z mixing and the X-point camel's back structure. Interband mixing makes Γ-X z radiative transitions observable in photoluminescence (PL) and RR experiments. Phonon-assisted transitions from the X z state are also observed in PL experiments. Several of the participating phonon modes are unambiguously identified, in good agreement with recent reports. This thesis presents the first detailed experimental and theoretical study of Type II RR scattering from the incoming channel of the X z -related Type II bandgap. The X z - related Type II incoming RR spectra in the GaAs optic phonon region are compared with the Γ-related Type I outgoing RR spectra within several theoretical models. Thereby, the mechanisms of the Type II RR scattering, the origins of the RR lineshape and the polarisation dependence, are fully explained, clarifying the spectral features observed in the GaAs zone-centre optic phonon region. The Type II resonance also allows the observation of zone boundary (X-point) phonons from intervalley (IV) scattering. A model of the IV electron-phonon interaction involving X conduction band electrons and zone boundary phonons in Type II SLs is presented

Probing Pharmaceutical Mixtures during Milling: The Potency of Low-Frequency Raman Spectroscopy in Identifying Disorder.

Science.gov (United States)

Walker, Greg; Römann, Philipp; Poller, Bettina; Löbmann, Korbinian; Grohganz, Holger; Rooney, Jeremy S; Huff, Gregory S; Smith, Geoffrey P S; Rades, Thomas; Gordon, Keith C; Strachan, Clare J; Fraser-Miller, Sara J

2017-12-04

This study uses a multimodal analytical approach to evaluate the rates of (co)amorphization of milled drug and excipient and the effectiveness of different analytical methods in detecting these changes. Indomethacin and tryptophan were the model substances, and the analytical methods included low-frequency Raman spectroscopy (785 nm excitation and capable of measuring both low- (10 to 250 cm -1 ) and midfrequency (450 to 1800 cm -1 ) regimes, and a 830 nm system (5 to 250 cm -1 )), conventional (200-3000 cm -1 ) Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), and X-ray powder diffraction (XRPD). The kinetics of amorphization were found to be faster for the mixture, and indeed, for indomethacin, only partial amorphization occurred (after 360 min of milling). Each technique was capable of identifying the transformations, but some, such as low-frequency Raman spectroscopy and XRPD, provided less ambiguous signatures than the midvibrational frequency techniques (conventional Raman and FTIR). The low-frequency Raman spectra showed intense phonon mode bands for the crystalline and cocrystalline samples that could be used as a sensitive probe of order. Multivariate analysis has been used to further interpret the spectral changes. Overall, this study demonstrates the potential of low-frequency Raman spectroscopy, which has several practical advantages over XRPD, for probing (dis-)order during pharmaceutical processing, showcasing its potential for future development, and implementation as an in-line process monitoring method.

Graphitic carbon nanospheres: A Raman spectroscopic investigation of thermal conductivity and morphological evolution by pulsed laser irradiation

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Radhe; Sahoo, Satyaprakash, E-mail: satya504@gmail.com, E-mail: rkatiyar@hpcf.upr.edu; Chitturi, Venkateswara Rao; Katiyar, Ram S., E-mail: satya504@gmail.com, E-mail: rkatiyar@hpcf.upr.edu [Department of Physics, University of Puerto Rico, San Juan, Puerto Rico 00936-8377 (United States)

2015-12-07

Graphitic carbon nanospheres (GCNSs) were prepared by a unique acidic treatment of multi-walled nanotubes. Spherical morphology with a narrow size distribution was confirmed by transmission electron microscopy studies. The room temperature Raman spectra showed a clear signature of D- and G-peaks at around 1350 and 1591 cm{sup −1}, respectively. Temperature dependent Raman scattering measurements were performed to understand the phonon dynamics and first order temperature coefficients related to the D- and G-peaks. The temperature dependent Raman spectra in a range of 83–473 K were analysed, where the D-peak was observed to show a red-shift with increasing temperature. The relative intensity ratio of D- to G-peaks also showed a significant rise with increasing temperature. Such a temperature dependent behaviour can be attributed to lengthening of the C-C bond due to thermal expansion in material. The estimated value of the thermal conductivity of GCNSs ∼0.97 W m{sup −1} K{sup −1} was calculated using Raman spectroscopy. In addition, the effect of pulsed laser treatment on the GCNSs was demonstrated by analyzing the Raman spectra of post irradiated samples.

Probing edge-activated resonant Raman scattering from mechanically exfoliated 2D MoO3 nanolayers

International Nuclear Information System (INIS)

Yano, Taka-aki; Yoshida, Keisuke; Hayashi, Tomohiro; Hara, Masahiko; Hayamizu, Yuhei; Ohuchi, Fumio

2015-01-01

We report spatially resolved vibrational analysis of mechanically exfoliated single-crystalline α-MoO 3 nanolayers. Raman scattering from α-MoO 3 was enhanced predominantly at the outside edges of the nanolayers. The enhanced Raman scattering at the edges was attributed primarily to the enhanced resonant Raman effect caused by a high density of oxygen vacancies localized at the edges. The localized vacancy sites corresponded to a non-stoichiometric phase of MoO 3 , which would provide reactive sites with high catalytic activity. (paper)

Analytical approach to phonons and electron-phonon interactions in single-walled zigzag carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Kandemir, B S; Keskin, M [Department of Physics, Faculty of Sciences, Ankara University, 06100 Tandogan, Ankara (Turkey)

2008-08-13

In this paper, exact analytical expressions for the entire phonon spectra in single-walled carbon nanotubes with zigzag geometry are presented by using a new approach, originally developed by Kandemir and Altanhan. This approach is based on the concept of construction of a classical lattice Hamiltonian of single-walled carbon nanotubes, wherein the nearest and next nearest neighbor and bond bending interactions are all included, then its quantization and finally diagonalization of the resulting second quantized Hamiltonian. Furthermore, within this context, explicit analytical expressions for the relevant electron-phonon interaction coefficients are also investigated for single-walled carbon nanotubes having this geometry, by the phonon modulation of the hopping interaction.

Analytical approach to phonons and electron-phonon interactions in single-walled zigzag carbon nanotubes

International Nuclear Information System (INIS)

Kandemir, B S; Keskin, M

2008-01-01

In this paper, exact analytical expressions for the entire phonon spectra in single-walled carbon nanotubes with zigzag geometry are presented by using a new approach, originally developed by Kandemir and Altanhan. This approach is based on the concept of construction of a classical lattice Hamiltonian of single-walled carbon nanotubes, wherein the nearest and next nearest neighbor and bond bending interactions are all included, then its quantization and finally diagonalization of the resulting second quantized Hamiltonian. Furthermore, within this context, explicit analytical expressions for the relevant electron-phonon interaction coefficients are also investigated for single-walled carbon nanotubes having this geometry, by the phonon modulation of the hopping interaction

Polar modes in relaxor PbMg.sub.1/3./sub.Nb.sub.2/3./sub.O.sub.3./sub. by hyper-Raman scattering

Czech Academy of Sciences Publication Activity Database

Hehlen, B.; Simon, G.; Hlinka, Jiří

2007-01-01

Roč. 75, č. 5 (2007), 052104/1-052104/3 ISSN 1098-0121 R&D Projects: GA ČR GA202/06/0411 Institutional research plan: CEZ:AV0Z10100520 Keywords : relaxor * hyper -Raman scattering * lattice vibration * phonon spectra Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.172, year: 2007

Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe₂ and WSe₂.

Science.gov (United States)

Late, Dattatray J; Shirodkar, Sharmila N; Waghmare, Umesh V; Dravid, Vinayak P; Rao, C N R

2014-06-06

We report the temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe2 in the range 77-700 K. We observed linear variation in the peak positions and widths of the bands arising from contributions of anharmonicity and thermal expansion. After characterization using atomic force microscopy and high-resolution transmission electron microscopy, the temperature coefficients of the Raman modes were determined. Interestingly, the temperature coefficient of the A(2)(2u) mode is larger than that of the A(1g) mode, the latter being much smaller than the corresponding temperature coefficients of the same mode in single-layer MoS2 and of the G band of graphene. The temperature coefficients of the two modes in single-layer MoSe2 are larger than those of the same modes in single-layer WSe2. We have estimated thermal expansion coefficients and temperature dependence of the vibrational frequencies of MoS2 and MoSe2 within a quasi-harmonic approximation, with inputs from first-principles calculations based on density functional theory. We show that the contrasting temperature dependence of the Raman-active mode A(1g) in MoS2 and MoSe2 arises essentially from the difference in their strain-phonon coupling. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of the low-frequency Raman scattering in NaNbO{sub 3} crystal

Energy Technology Data Exchange (ETDEWEB)

Bouziane, E [Laboratoire Materiaux Optiques, Photonique et Systemes, FRE CNRS 2304, Universite de Metz et Supelec, 2 Rue E Belin, 57070 Metz Cedex (France); Fontana, M D [Laboratoire Materiaux Optiques, Photonique et Systemes, FRE CNRS 2304, Universite de Metz et Supelec, 2 Rue E Belin, 57070 Metz Cedex (France); Ayadi, M [Laboratoire de Physique des Materiaux et d' Electronique, Faculte des Sciences I, Ain Chock, Universite Hassan II, Casablanca (Morocco)

2003-03-12

The Raman scattering spectrum of the sodium niobate crystal, in both P and R phases, has been investigated from room temperature up to 440{sup d}eg C. The dependence of the low-frequency (LF) spectrum clearly reveals, for the first time, over a wide temperature range, the presence of a strong quasi-elastic scattering below a LF zone centre phonon. The phase transition mechanism is discussed, considering an order-disorder process induced by the relaxation of the Nb ions.

Tunable infrared reflectance by phonon modulation

Science.gov (United States)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Quantitative investigation of Raman selection rules and validation of the secular equation for trigonal LiNbO3

International Nuclear Information System (INIS)

Pezzotti, Giuseppe; Hagihara, Hirofumi; Zhu Wenliang

2013-01-01

Some theoretical aspects of the vibrational behaviour of trigonal lithium niobate (LiNbO 3 ) are studied and discussed in detail based on spectroscopic experimental assessments. Polarized Raman spectroscopy is systematically applied to retrieve the fundamental parameters governing the dependence of Raman intensity on crystallographic orientation, through quantitating the complete set of individual elements for the second-rank Raman tensors of the LiNbO 3 cell (C 3v (3m) point group, R3c space group). Moreover, computational algorithms are also explicitly constructed to describe the spectral shifts of the selected Raman bands when subjected to unknown stress fields. Accordingly, we have experimentally confirmed the validity of the secular equation for the trigonal cell and quantitatively substantiated its application through the determination of the full set of phonon deformation potentials for seven independent bands among those available in the LiNbO 3 vibrational spectrum. Finally, a brief discussion is offered about the significance of the presented characterizations in the technological field of LiNbO 3 devices, including the newly shown possibility of quantitatively and concurrently unfolding from polarized Raman spectra both crystallographic and mechanical information in their vectorial and tensorial nature, respectively. (paper)

Raman study of strain in GaN/AlN quantum dot multilayered structures

Energy Technology Data Exchange (ETDEWEB)

Cros, A.; Garro, N.; Llorens, J.M.; Garcia-Cristobal, A.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, 46071 Valencia (Spain); Gogneau, N.; Monroy, E.; Daudin, B. [CEA-CNRS Group, ' ' Nanophysique et Semiconducteurs' ' , Departement de la Recherche Fondamentale sur la Matiere Condensee, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France)

2005-05-01

Raman spectroscopy has been used to investigate self-assembled stacks of GaN/AlN quantum dots with increasing number of periods. The E{sub 2H} phonon modes associated to GaN and AlN are clearly resolved with visible excitation, and their energies allow the simultaneous monitoring of the dot and barrier strain states. The compression of the quantum dots is evidenced by a shift of the E{sub 2H} phonon mode of circa 29 cm{sup -1} to higher energies with respect to its relaxed value. The strain of the AlN spacer is found to be correlated to that of the dot, with an increase in its tensile component for the samples with fewer periods and a partial relaxation for samples over 50 periods. Additionally, resonant effects of the A{sub 1}(LO) phonon mode have been investigated by tuning the excitation over a wide range in the ultra-violet region. A discussion of the strain distribution in quantum dots and spacers as a function of the number of periods is performed by means of a theoretical calculation based on the method of inclusions. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Tunable infrared reflectance by phonon modulation

Energy Technology Data Exchange (ETDEWEB)

Ihlefeld, Jon F.; Sinclair, Michael B.; Beechem, III, Thomas E.

2018-03-06

The present invention pertains to the use of mobile coherent interfaces in a ferroelectric material to interact with optical phonons and, ultimately, to affect the material's optical properties. In altering the optical phonon properties, the optical properties of the ferroelectric material in the spectral range near-to the phonon mode frequency can dramatically change. This can result in a facile means to change to the optical response of the ferroelectric material in the infrared.

Growth and Raman spectroscopy studies of gold-free catalyzed semiconductor nanowires

Energy Technology Data Exchange (ETDEWEB)

Zardo, Ilaria

2010-12-15

The present Ph.D. thesis proposes two aims: the search for catalysts alternative to gold for the growth of silicon nanowires and the investigation of the structural properties of the gold-free catalyzed Si, Ge, and GaAs nanowires. The successful growth of gold free catalyzed silicon nanowires was obtained using Ga and In as catalyst. Hydrogen plasma conditions were needed during the growth process. We proposed a growth mechanism where the role of the hydrogen plasma is taken into account. The influence of the growth conditions on nanowire growth morphology and structural properties was investigated in detail. The TEM studies showed the occurrence of different kind of twin defects depending on the nanowire growth direction. The intersection of twins in different spatial directions in <111>-oriented nanowires or the periodicity of highly dense twins in <112>-oriented nanowires leads to the formation of hexagonal domains embedded in the diamond silicon structure. A simple crystallographic model which illustrates the formation of the hexagonal phase was proposed. The presence of the hexagonal domains embedded in the diamond silicon structure was investigated also by means of Raman spectroscopy. The measured frequencies of the E2g and A1g modes were found to be in agreement with frequencies expected from phonon dispersion folding. An estimation of the percentage of hexagonal structure with respect to the cubic structure was given. The relative percentage of the two structures was found to change with growth temperature. Spatially resolved Raman scattering experiments were also realized on single Si nanowires. The lattice dynamics of gold-free catalyzed Ge and GaAs nanowires was studied by means of Raman spectroscopy. We performed spatially resolved Raman spectroscopy experiments on single crystalline- amorphous core-shell Ge nanowires. The correlation with TEM studies on nanowires grown under the same conditions and with AFM measurements realized of the same nanowires

Micro-Raman scattering and dielectric investigations of phase transitions behavior in the PbHf0.7Sn0.3O3 single crystal

Science.gov (United States)

Jankowska-Sumara, Irena; Ko, Jae-Hyeon; Podgórna, Maria; Oh, Soo Han; Majchrowski, Andrzej

2017-09-01

Raman light scattering was used to detect the sequence of transitions in a PbHf1-xSnxO3 (PHS) single crystal with x = 0.30 in a temperature range of 77-873 K. Changes of Raman spectra were observed in the vicinity of structural phase transitions: between the antiferroelectric (AFE1)-antiferroelectric (AFE2)—intermediate—paraelectric phases. Light scattering and dielectric investigations were used to find out the nature and sequence of the phase transition, as well as the large dielectric permittivity values measured at the phase transition, by searching for the soft-phonon-mode behavior. The experimentally recorded spectra were analyzed in terms of the damped-harmonic oscillator model for the phonon bands. It is demonstrated that the structural phase transformations in PHS can be considered as the result of softening of many modes, not only the ferroelectric one. It was also proved that locally broken symmetry effects are present at temperatures far above the Curie temperature and are connected with the softening of two optic modes of different nature.

Situation with collective two-phonon states in deformed nuclei

International Nuclear Information System (INIS)

Soloviev, V.G.; Shirikova, N.Yu.

1982-01-01

Within the quasiparticle-phonon nuclear model with the operators of phonons depending on the sign of the angular momentum projection, the Pauli principle is taken into account in the two-phonon components of the wave functions. The centroid energies of the collective two-phonon states in even-even deformed nuclei are calculated. It is shown that the inclusion of the Pauli principle leads to their shift by 1-3 MeV towards high energies. The shifts of three-phonon poles due to the Pauli principle are calculated in the three-phonon components of the wave functions. The collective two-phonon states, the centroid energies of which are 3-5 MeV, are expected to be strongly fragmented. The conclusion is confirmed that the collective two-phonon states should not exist in deformed nuclei. The situation in 168 Er and in the 228 Th isotopes is analysed

Solution structures of potato virus X and narcissus mosaic virus from Raman optical activity

DEFF Research Database (Denmark)

Blanch, Ewan W.; Robinson, David J.; Hecht, Lutz

2002-01-01

Potato virus X (PVX) and narcissus mosaic virus (NMV) were studied using vibrational Raman optical activity (ROA) in order to obtain new information on the structures of their coat protein subunits. The ROA spectra of the two intact virions are very similar to each other and similar to that of to......Potato virus X (PVX) and narcissus mosaic virus (NMV) were studied using vibrational Raman optical activity (ROA) in order to obtain new information on the structures of their coat protein subunits. The ROA spectra of the two intact virions are very similar to each other and similar...

A holographic perspective on phonons and pseudo-phonons

Energy Technology Data Exchange (ETDEWEB)

Amoretti, Andrea [Institute of Theoretical Physics and Astrophysics, University of Würzburg,97074 Würzburg (Germany); Physique Théorique et Mathématique and International Solvay Institutes,Université Libre de Bruxelles,C.P. 231, 1050 Brussels (Belgium); Areán, Daniel [Max-Planck-Institut für Physik (Werner-Heisenberg-Institut),Föhringer Ring 6, D-80805, Munich (Germany); Argurio, Riccardo [Physique Théorique et Mathématique and International Solvay Institutes,Université Libre de Bruxelles,C.P. 231, 1050 Brussels (Belgium); Musso, Daniele [Departamento de Física de Partículas, Universidade de Santiago de Compostelaand Instituto Galego de Física de Altas Enerxías (IGFAE),E-15782, Santiago de Compostela (Spain); Zayas, Leopoldo A. Pando [Michigan Center for Theoretical Physics, Department of Physics, University of Michigan,Ann Arbor, MI 48109 (United States)

2017-05-10

We analyze the concomitant spontaneous breaking of translation and conformal symmetries by introducing in a CFT a complex scalar operator that acquires a spatially dependent expectation value. The model, inspired by the holographic Q-lattice, provides a privileged setup to study the emergence of phonons from a spontaneous translational symmetry breaking in a conformal field theory and offers valuable hints for the treatment of phonons in QFT at large. We first analyze the Ward identity structure by means of standard QFT techniques, considering both spontaneous and explicit symmetry breaking. Next, by implementing holographic renormalization, we show that the same set of Ward identities holds in the holographic Q-lattice. Eventually, relying on the holographic and QFT results, we study the correlators realizing the symmetry breaking pattern and how they encode information about the low-energy spectrum.

Phonon optimized interatomic potential for aluminum

Directory of Open Access Journals (Sweden)

Murali Gopal Muraleedharan

2017-12-01

Full Text Available We address the problem of generating a phonon optimized interatomic potential (POP for aluminum. The POP methodology, which has already been shown to work for semiconductors such as silicon and germanium, uses an evolutionary strategy based on a genetic algorithm (GA to optimize the free parameters in an empirical interatomic potential (EIP. For aluminum, we used the Vashishta functional form. The training data set was generated ab initio, consisting of forces, energy vs. volume, stresses, and harmonic and cubic force constants obtained from density functional theory (DFT calculations. Existing potentials for aluminum, such as the embedded atom method (EAM and charge-optimized many-body (COMB3 potential, show larger errors when the EIP forces are compared with those predicted by DFT, and thus they are not particularly well suited for reproducing phonon properties. Using a comprehensive Vashishta functional form, which involves short and long-ranged interactions, as well as three-body terms, we were able to better capture interactions that reproduce phonon properties accurately. Furthermore, the Vashishta potential is flexible enough to be extended to Al2O3 and the interface between Al-Al2O3, which is technologically important for combustion of solid Al nano powders. The POP developed here is tested for accuracy by comparing phonon thermal conductivity accumulation plots, density of states, and dispersion relations with DFT results. It is shown to perform well in molecular dynamics (MD simulations as well, where the phonon thermal conductivity is calculated via the Green-Kubo relation. The results are within 10% of the values obtained by solving the Boltzmann transport equation (BTE, employing Fermi’s Golden Rule to predict the phonon-phonon relaxation times.

Phonon optimized interatomic potential for aluminum

Science.gov (United States)

Muraleedharan, Murali Gopal; Rohskopf, Andrew; Yang, Vigor; Henry, Asegun

2017-12-01

We address the problem of generating a phonon optimized interatomic potential (POP) for aluminum. The POP methodology, which has already been shown to work for semiconductors such as silicon and germanium, uses an evolutionary strategy based on a genetic algorithm (GA) to optimize the free parameters in an empirical interatomic potential (EIP). For aluminum, we used the Vashishta functional form. The training data set was generated ab initio, consisting of forces, energy vs. volume, stresses, and harmonic and cubic force constants obtained from density functional theory (DFT) calculations. Existing potentials for aluminum, such as the embedded atom method (EAM) and charge-optimized many-body (COMB3) potential, show larger errors when the EIP forces are compared with those predicted by DFT, and thus they are not particularly well suited for reproducing phonon properties. Using a comprehensive Vashishta functional form, which involves short and long-ranged interactions, as well as three-body terms, we were able to better capture interactions that reproduce phonon properties accurately. Furthermore, the Vashishta potential is flexible enough to be extended to Al2O3 and the interface between Al-Al2O3, which is technologically important for combustion of solid Al nano powders. The POP developed here is tested for accuracy by comparing phonon thermal conductivity accumulation plots, density of states, and dispersion relations with DFT results. It is shown to perform well in molecular dynamics (MD) simulations as well, where the phonon thermal conductivity is calculated via the Green-Kubo relation. The results are within 10% of the values obtained by solving the Boltzmann transport equation (BTE), employing Fermi's Golden Rule to predict the phonon-phonon relaxation times.

Scattering of phonons by dislocations

International Nuclear Information System (INIS)

Anderson, A.C.

1979-01-01

By 1950, an explicit effort had been launched to use lattice thermal conductivity measurements in the investigation of defect structures in solids. This technique has been highly successful, especially when combined with the measurements of other properties such as optical absorption. One exception has been the study of dislocations. Although dislocations have a profound effect on the phonon thermal conductivity, the mechanisms of the phonon-dislocation interaction are poorly understood. The most basic questions are still debated in the literature. It therefore is pointless to attempt a quantitative comparison between an extensive accumulation of experimental data on the one hand, and the numerous theoretical models on the other. Instead, this chapter will attempt to glean a few qualitative conclusions from the existing experimental data. These results will then be compared with two general models which incorporate, in a qualitative manner, most of the proposed theories of the phonon-dislocation interaction. Until very recently, measurement of thermal conductivity was the only means available to probe the interaction between phonons and defects at phonon frequencies above the standard ultrasonic range of approx. = 10 9 Hz. The introductory paragraphs provide a brief review of the thermal-conductivity technique and the problems which are encountered in practice. There is also a brief presentation of the theoretical models and the complications that may occur in more realistic situations

Raman scattering by the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Oliva, R.; Ibanez, J.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n, 08028 Barcelona, Catalonia (Spain); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Serafinczuk, J. [Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Martinez, O.; Jimenez, J. [Departamento de Fisica de la Materia Condensada, Cristalografia, y Mineralogia, Universidad de Valladolid, 47011 Valladolid (Spain); Henini, M. [Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Boney, C.; Bensaoula, A. [Department of Physics, University of Houston, 4800 Calhoun, Houston, Texas 77004 (United States)

2012-03-15

We use Raman scattering to investigate the composition behavior of the E{sub 2h} and A{sub 1}(LO) phonons of In{sub x}Ga{sub 1-x}N and to evaluate the role of lateral compositional fluctuations and in-depth strain/composition gradients on the frequency of the A{sub 1}(LO) bands. For this purpose, we have performed visible and ultraviolet Raman measurements on a set of high-quality epilayers grown by molecular beam epitaxy with In contents over a wide composition range (0.25 < x < 0.75). While the as-measured A{sub 1}(LO) frequency values strongly deviate from the linear dispersion predicted by the modified random-element isodisplacement (MREI) model, we show that the strain-corrected A{sub 1}(LO) frequencies are qualitatively in good agreement with the expected linear dependence. In contrast, we find that the strain-corrected E{sub 2h} frequencies exhibit a bowing in relation to the linear behavior predicted by the MREI model. Such bowing should be taken into account to evaluate the composition or the strain state of InGaN material from the E{sub 2h} peak frequencies. We show that in-depth strain/composition gradients and selective resonance excitation effects have a strong impact on the frequency of the A{sub 1}(LO) mode, making very difficult the use of this mode to evaluate the strain state or the composition of InGaN material.

Phonon anomalies in optical spectra of LiNbO3 single crystals

Directory of Open Access Journals (Sweden)

ANDREJA VALCIC

2004-06-01

Full Text Available LiNbO3 single crystals were grown by the Czochralski technique in an air atmosphere. The critical crystal diameter Dc = 1.5 cm and the critical rate of rotation wc = 35 rpm were calculated by equations from the hydrodynamics of the melt. The domain inversion was carried out at 1430 K using a 3.75 V/cm electric field for 10 min. The obtained crystals were cut, polished and etched to determine the presence of dislocations and single domain structures. The optical properties were studied by infrared and Raman spectroscopy as a function of temperature. With decreasing temperature, an atypical behaviour of the phonon modes could be seen in the ferroelectrics LiNbO3. The obtained results are discussed and compared with published data.

Photon-phonon laser on crystalline silicon: a feasibility study

International Nuclear Information System (INIS)

Zadernovsky, A A

2015-01-01

We discuss a feasibility of photon-phonon laser action in bulk silicon with electron population inversion. It is well known, that only direct gap semiconductors are used as an active medium in optical lasers. In indirect gap semiconductors, such as crystalline silicon, the near-to-gap radiative electron transitions must be assisted by emission or absorption of phonons to conserve the momentum. The rate of such two-quantum transitions is much less than in direct gap semiconductors, where the similar radiative transitions are single-quantum. As a result, the quantum efficiency of luminescence in silicon is too small to get it as a laser material. Numerous proposals to overcome this problem are aimed at increasing the rate of radiative recombination. We suggest enhancing the quantum efficiency of luminescence in silicon by stimulating the photon part of the two-quantum transitions by light from an appropriate external laser source. This allows us to obtain initially an external-source-assisted lasing in silicon and then a true photon-phonon lasing without any external source of radiation. Performed analysis revealed a number of requirements to the silicon laser medium (temperature, purity and perfection of crystals) and to the intensity of stimulating radiation. We discuss different mechanisms that may hinder the implementation of photon-phonon lasing in silicon

Electron-phonon coupling in one dimension

International Nuclear Information System (INIS)

Apostol, M.; Baldea, I.

1981-08-01

The Ward identity is derived for the electron-phonon coupling in one dimension and the spectrum of elementary excitations is calculated by assuming that the Fermi distribution is not strongly distorted by interaction. The electron-phonon vertex is renormalized in the case of the forward scattering and Migdal's theorem is discussed. A model is proposed for the giant Kohn anomaly. The dip in the phonon spectrum is obtained and found to be in agreement with the experimental data for KCP. (author)

Tunable phonon-induced transparency in bilayer graphene nanoribbons.

Science.gov (United States)

Yan, Hugen; Low, Tony; Guinea, Francisco; Xia, Fengnian; Avouris, Phaedon

2014-08-13

In the phenomenon of plasmon-induced transparency, which is a classical analogue of electromagnetically induced transparency (EIT) in atomic gases, the coherent interference between two plasmon modes results in an optical transparency window in a broad absorption spectrum. With the requirement of contrasting lifetimes, typically one of the plasmon modes involved is a dark mode that has limited coupling to the electromagnetic radiation and possesses relatively longer lifetime. Plasmon-induced transparency not only leads to light transmission at otherwise opaque frequency regions but also results in the slowing of light group velocity and enhanced optical nonlinearity. In this article, we report an analogous behavior, denoted as phonon-induced transparency (PIT), in AB-stacked bilayer graphene nanoribbons. Here, light absorption due to the plasmon excitation is suppressed in a narrow window due to the coupling with the infrared active Γ-point optical phonon, whose function here is similar to that of the dark plasmon mode in the plasmon-induced transparency. We further show that PIT in bilayer graphene is actively tunable by electrostatic gating and estimate a maximum slow light factor of around 500 at the phonon frequency of 1580 cm(-1), based on the measured spectra. Our demonstration opens an avenue for the exploration of few-photon nonlinear optics and slow light in this novel two-dimensional material.

Quasiparticle--phonon model of the nucleus. V. Odd spherical nuclei

International Nuclear Information System (INIS)

Vdovin, A.I.; Voronov, V.V.; Solov'ev, V.G.; Stoyanov, C.

1985-01-01

The formalism of the quasiparticle--phonon model of the nucleus for odd spherical nuclei is presented. The exact commutation relations of the quasiparticle and phonon operators together with the anharmonic corrections for the phonon excitations are taken into account in the derivation of equations for the energies and structure coefficients of the wave functions of excited states, which include quasiparticle--phonon and quasiparticle--two-phonon components. The influence of various physical effects and of the dimension of the phonon basis on the fragmentation of the single-quasiparticle and quasiparticle-phonon states is investigated

Specularity of longitudinal acoustic phonons at rough surfaces

Science.gov (United States)

Gelda, Dhruv; Ghossoub, Marc G.; Valavala, Krishna; Ma, Jun; Rajagopal, Manjunath C.; Sinha, Sanjiv

2018-01-01

The specularity of phonons at crystal surfaces is of direct importance to thermal transport in nanostructures and to dissipation in nanomechanical resonators. Wave scattering theory provides a framework for estimating wavelength-dependent specularity, but experimental validation remains elusive. Widely available thermal conductivity data presents poor validation since the involvement of the infinitude of phonon wavelengths in thermal transport presents an underconstrained test for specularity theory. Here, we report phonon specularity by measuring the lifetimes of individual coherent longitudinal acoustic phonon modes excited in ultrathin (36-205 nm) suspended silicon membranes at room temperature over the frequency range ˜20 -118 GHz. Phonon surface scattering dominates intrinsic Akhiezer damping at frequencies ≳60 GHz, enabling measurements of phonon boundary scattering time over wavelengths ˜72 -140 nm . We obtain detailed statistics of the surface roughness at the top and bottom surfaces of membranes using HRTEM imaging. We find that the specularity of the excited modes are in good agreement with solutions of wave scattering only when the TEM statistics are corrected for projection errors. The often-cited Ziman formula for phonon specularity also appears in good agreement with the data, contradicting previous results. This work helps to advance the fundamental understanding of phonon scattering at the surfaces of nanostructures.

Observation of magnon-phonon interaction at short wavelengths

International Nuclear Information System (INIS)

Dolling, G.; Cowley, R.A.

1966-01-01

Measurements have been made of the magnon and phonon dispersion relations in uranium dioxide at 9 o K. These measurements provide evidence of a strong interaction between the magnon and phonon excitations and enable a value to be deduced for the coupling constant. The interaction of long-wavelength magnons in ferromagnetic materials has been studied previously with ultrasonic techniques; however, inelastic scattering of slow neutrons enables both the magnon and phonon dispersion relations to be determined for short wavelengths. In those magnetic materials which have been studied by earlier workers, the magnons and phonons either interacted with one another very weakly or else their frequencies were very different. The results could then be understood without introducing any magnon-phonon interaction. In this note we report measurements of both the magnon and the phonon spectra of antiferromagnetic uranium dioxide, which lead to a magnon-phonon coupling constant of 9.6 ± 1.6 o K. Since the Neel temperature is 30.8 o K, this coupling constant is of a similar magnitude to the direct magnetic interactions. (author)

Polymorph characterization of active pharmaceutical ingredients (APIs) using low-frequency Raman spectroscopy.

Science.gov (United States)

Larkin, Peter J; Dabros, Marta; Sarsfield, Beth; Chan, Eric; Carriere, James T; Smith, Brian C

2014-01-01

Polymorph detection, identification, and quantitation in crystalline materials are of great importance to the pharmaceutical industry. Vibrational spectroscopic techniques used for this purpose include Fourier transform mid-infrared (FT-MIR) spectroscopy, Fourier transform near-infrared (FT-NIR) spectroscopy, Raman spectroscopy, and terahertz (THz) and far-infrared (FIR) spectroscopy. Typically, the fundamental molecular vibrations accessed using high-frequency Raman and MIR spectroscopy or the overtone and combination of bands in the NIR spectra are used to monitor the solid-state forms of active pharmaceutical ingredients (APIs). The local environmental sensitivity of the fundamental molecular vibrations provides an indirect probe of the long-range order in molecular crystals. However, low-frequency vibrational spectroscopy provides access to the lattice vibrations of molecular crystals and, hence, has the potential to more directly probe intermolecular interactions in the solid state. Recent advances in filter technology enable high-quality, low-frequency Raman spectra to be acquired using a single-stage spectrograph. This innovation enables the cost-effective collection of high-quality Raman spectra in the 200-10 cm(-1) region. In this study, we demonstrate the potential of low-frequency Raman spectroscopy for the polymorphic characterization of APIs. This approach provides several benefits over existing techniques, including ease of sampling and more intense, information-rich band structures that can potentially discriminate among crystalline forms. An improved understanding of the relationship between the crystalline structure and the low-frequency vibrational spectrum is needed for the more widespread use of the technique.

Electron-Mediated Phonon-Phonon Coupling Drives the Vibrational Relaxation of CO on Cu(100)

Science.gov (United States)

Novko, D.; Alducin, M.; Juaristi, J. I.

2018-04-01

We bring forth a consistent theory for the electron-mediated vibrational intermode coupling that clarifies the microscopic mechanism behind the vibrational relaxation of adsorbates on metal surfaces. Our analysis points out the inability of state-of-the-art nonadiabatic theories to quantitatively reproduce the experimental linewidth of the CO internal stretch mode on Cu(100) and it emphasizes the crucial role of the electron-mediated phonon-phonon coupling in this regard. The results demonstrate a strong electron-mediated coupling between the internal stretch and low-energy CO modes, but also a significant role of surface motion. Our nonadiabatic theory is also able to explain the temperature dependence of the internal stretch phonon linewidth, thus far considered a sign of the direct anharmonic coupling.

Phonon anomalies and electron-phonon coupling of metal surfaces and thin films; Phononenanomalien und Elektron-Phonon-Kopplung an Metalloberflaechen und duennen Schichten

Energy Technology Data Exchange (ETDEWEB)

Flach, B.

2000-01-01

This thesis has two topics: One is the investigation of an adsorbate induced phonon anomaly on W(110) and Mo{sub 1-x}Re{sub x}(110) (x = 5, 15, 25%) with inelastic helium atom scattering (HAS). The other one is the study of the growth, morphology and dynamics of ultra-thin lithium films deposited on W(110). In 1992 a giant phonon anomaly was found by J. Luedecke on the hydrogen saturated W(110) and Mo(110) surfaces. The anomaly consists of a deep and sharp indentation in the phonon dispersion curves in which the phonon energy nearly drops to zero ({omega}{sub 1}). In addition, a small and broad dip in the surface Rayleigh mode is observed ({omega}{sub 2}). The anomaly appears in the anti {gamma}-H- as well as in the anti {gamma}-S-direction of the surface Brillouin zone (SBZ). Since its first discovery, numerous other experimental and theoretical studies have followed. In the present work the effects is reinvestigated and experimental parameters, such as the crystal temperature and the incident energy, were changed in order to study their influence on the anomalous phonon behavior. In the case of H/Mo(110) the substrate was changed as well by alloying with small amounts of rhenium. In the present experiments a strong crystal temperature dependence of the {omega}{sub 2}-branch was found which leads to lower energies at the 'dip' for smaller temperatures, while the {omega}{sub 1}-anomaly remains unchanged. Such behavior agrees well with the picture that the {omega}{sub 2}-branch is due to a Kohn anomaly. (orig.)

Laser-Raman spectroscopy of living cells

International Nuclear Information System (INIS)

Webb, S.J.

1980-01-01

Investigations into the laser-Raman shift spectra of bacterial and mammalian cells have revealed that many Raman lines observed at 4-6 K, do not appear in the spectra of cells held at 300 K. At 300 K, Raman activity, at set frequencies, is observed only when the cells are metabolically active; however, the actual live cell spectrum, between 0 and 3400 cm -1 , has been found to alter in a specific way with time as the cells' progress through their life cycles. Lines above 300 cm -1 , from in vivo Raman active states, appear to shift to higher wave numbers whereas those below 300 cm -1 seem to shift to lower ones. The transient nature of many shift lines observed and the intensity of them when present in the spectrum indicates that, in, vivo, a metabolically induced condensation of closely related states occurs at a set time in the life of a living cell. In addition, the calculated ratio between the intensities of Stokes and anti-Stokes lines observed suggests that the metabolically induced 'collective' Raman active states are produced, in vivo, by non thermal means. It appears, therefore, that the energetics of the well established cell 'time clock' may be studied by laser-Raman spectroscopy; moreover, Raman spectroscopy may yield a new type of information regarding the physics of such biological phenomena as nutrition, virus infection and oncogenesis. (orig.)

Phonon excitations in multicomponent amorphous solids

International Nuclear Information System (INIS)

Vakarchuk, I.A.; Migal', V.M.; Tkachuk, V.M.

1988-01-01

The method of two-time temperature-dependent Green's functions is used to investigate phonon excitations in multicomponent amorphous solids. The equation obtained for the energy spectrum of the phonon excitations takes into account the damping associated with scattering of phonons by structure fluctuations. The quasicrystal approximation is considered, and as an example explicit expressions are obtained for the case of a two-component amorphous solid for the frequencies of the acoustical and optical modes and for the longitudinal and transverse velocities of sound. The damping is investigated

Electron–phonon superconductivity in YIn3

International Nuclear Information System (INIS)

Billington, D; Llewellyn-Jones, T M; Maroso, G; Dugdale, S B

2013-01-01

First-principles calculations of the electron–phonon coupling were performed on the cubic intermetallic compound YIn 3 . The electron–phonon coupling constant was found to be λ ep = 0.42. Using the Allen–Dynes formula with a Coulomb pseudopotential of μ* = 0.10, a T c of approximately 0.77 K is obtained which is reasonably consistent with the experimentally observed temperature (between 0.8 and 1.1 K). The results indicate that conventional electron–phonon coupling is capable of producing the superconductivity in this compound. (paper)

Electron-phonon superconductivity in YIn3

Science.gov (United States)

Billington, D.; Llewellyn-Jones, T. M.; Maroso, G.; Dugdale, S. B.

2013-08-01

First-principles calculations of the electron-phonon coupling were performed on the cubic intermetallic compound YIn3. The electron-phonon coupling constant was found to be λep = 0.42. Using the Allen-Dynes formula with a Coulomb pseudopotential of μ* = 0.10, a Tc of approximately 0.77 K is obtained which is reasonably consistent with the experimentally observed temperature (between 0.8 and 1.1 K). The results indicate that conventional electron-phonon coupling is capable of producing the superconductivity in this compound.

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Directory of Open Access Journals (Sweden)

Yanli Liu

2015-01-01

Full Text Available The temperature-dependent stress state in the AlGaN barrier layer of AlGaN/GaN heterostructure grown on sapphire substrate was investigated by ultraviolet (UV near-resonant Raman scattering. Strong scattering peak resulting from the A1(LO phonon mode of AlGaN is observed under near-resonance condition, which allows for the accurate measurement of Raman shifts with temperature. The temperature-dependent stress in the AlGaN layer determined by the resonance Raman spectra is consistent with the theoretical calculation result, taking lattice mismatch and thermal mismatch into account together. This good agreement indicates that the UV near-resonant Raman scattering can be a direct and effective method to characterize the stress state in thin AlGaN barrier layer of AlGaN/GaN HEMT heterostructures.

Four-phonon processes in the thermal conductivity of GaSb

International Nuclear Information System (INIS)

Aliev, M.I.; Arasly, D.G.; Guseinov, R.E.

1978-01-01

Phonon thermal conductivity of GaSb in the 300-700 K temperature range is studied by the light pulsed heating which is aimed at estimation of contributions of different polarized branches of acoustic oscillations into lattice thermal conductivity. The role of optico-acoustic interactions and multiphonon processes in phonon-phonon scattering at high temperatures is discussed. It is shown that the X thermal conductivity caused by the current carriers is negligibly small, and the Xsub(ph) phonon conductivity changes depending on temperature according to the Xsub(ph) approximately Tsup(-1.4) law. While calculating Xsub(ph) according to the Holland model taking into account phonon scattering on point defects the phonon thermal conductivity is given as a sum of contributions from longitudinal and transverse low-frequency Xsub(th1) and high-frequency Xsub(th2) acoustic phonons. It is established that at T>500 K Xsub(ph) is caused only by high-frequency transverse phonons and to explain the observed Xsub(ph) dependence on temperature it is necessary to introduce four-phonon process along with the three-phonon processes into intraphonon scattering

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

International Nuclear Information System (INIS)

Miao, K.; Charles, J.; Klimeck, G.; Sadasivam, S.; Fisher, T. S.; Kubis, T.

2016-01-01

Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Science.gov (United States)

Miao, K.; Sadasivam, S.; Charles, J.; Klimeck, G.; Fisher, T. S.; Kubis, T.

2016-03-01

Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Miao, K., E-mail: kmiao@purdue.edu; Charles, J.; Klimeck, G. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907 (United States); Sadasivam, S.; Fisher, T. S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Kubis, T. [Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907 (United States)

2016-03-14

Theoretical prediction of phonon transport in modern semiconductor nanodevices requires atomic resolution of device features and quantum transport models covering coherent and incoherent effects. The nonequilibrium Green's function method is known to serve this purpose well but is numerically expensive in simulating incoherent scattering processes. This work extends the efficient Büttiker probe approach widely used in electron transport to phonons and considers salient implications of the method. Different scattering mechanisms such as impurity, boundary, and Umklapp scattering are included, and the method is shown to reproduce the experimental thermal conductivity of bulk Si and Ge over a wide temperature range. Temperature jumps at the lead/device interface are captured in the quasi-ballistic transport regime consistent with results from the Boltzmann transport equation. Results of this method in Si/Ge heterojunctions illustrate the impact of atomic relaxation on the thermal interface conductance and the importance of inelastic scattering to activate high-energy channels for phonon transport. The resultant phonon transport model is capable of predicting the thermal performance in the heterostructure efficiently.

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering

International Nuclear Information System (INIS)

Sarua, A; Ji, Hangfeng; Pomeroy, J W; Kuball, M; Uren, M J; Martin, T

2010-01-01

Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors (HFETs), i.e. the strain induced by applying bias to a transistor, was studied using micro-Raman scattering spectroscopy as a function of applied source–drain voltage for different GaN buffer doping levels and substrate types. By monitoring the phonon frequency shifts and line width of the E 2 and A 1 (LO) phonon modes of GaN, a considerable piezoelectric strain/stress was found in undoped devices, which exhibited a saturation above 40 V bias. This saturation voltage was used to quantify the deep acceptor concentration in the GaN buffer layer. Using experimental Raman data and numerical modelling of the electric field distribution in the device, it was furthermore established that Fe doping causes confinement of the strain/stress to the vicinity of the AlGaN/GaN interface, i.e. near the electron channel, with potential implications for device reliability. It was concluded that varying the structure and doping in the buffer layer has the potential to modify the converse piezoelectric strain and hence affect reliability issues in AlGaN/GaN HFETs

Macro and micro Raman spectroscopy of YBa2Cu3O7 films and microbridges

International Nuclear Information System (INIS)

Bock, A.

1993-01-01

In the present work Raman spectroscopy is used as a method to characterize the properties of YBa 2 Cu 3 O 7 -films. This is done in the usual (macro-)Raman set-up as well as in the micro-Raman set-up where the spatial resolution is about one micron. To obtain comparable results the Raman spectra have to be corrected for the spectral response of the spectrometer. Therefore a calibration of the set-up was performed. The calibration can be used to determine spot temperatures by comparing Stokes and Anti-Stokes spectra. Two different methods are developed to correct for the straylight which is additionally observed in Raman-spectra of YBa 2 Cu 3 O 7 -films. Macro- as well as micro-Raman measurements are used to characterize the film properties, where care has been taken to avoid damages by the laser itself. The macro-Raman set-up is used to identify the properties of the film, such as orientation, oxygen-content and morphology. Outgrowths and other particles on the surface are on the other hand investigated by micro-Raman spectroscopy. The surface morphology is additionally characterized by scanning-electron-microscopy. This is compared to the Raman data. Raman spectra of epitaxial YBa 2 Cu 3 O 7 -films are taken as a function of the temperature and exciting wavelength. The influence on the phonons and on the electronic background is discussed separately. The obtained results are analyzed by comparison with single-crystal measurements. The investigation of YBa 2 Cu 3 O 7 -microbridges in the macro-Raman set-up allows a correlation between the local optical and electrical properties of the bridge. A method is presented which can account for the heating in the laser spot with high accuracy. This method allows to determine local critical current densities as well as local critical temperatures on the microbridge. It provides also the possibility to take Raman spectra at precise spot temperatures. (orig./WL)

Interplay between electron-phonon and electron-electron interactions

International Nuclear Information System (INIS)

Roesch, O.; Gunnarsson, O.; Han, J.E.; Crespi, V.H.

2005-01-01

We discuss the interplay between electron-electron and electron-phonon interactions for alkali-doped fullerides and high temperature superconductors. Due to the similarity of the electron and phonon energy scales, retardation effects are small for fullerides. This raises questions about the origin of superconductivity, since retardation effects are believed to be crucial for reducing effects of the Coulomb repulsion in conventional superconductors. We demonstrate that by treating the electron-electron and electron-phonon interactions on an equal footing, superconductivity can be understood in terms of a local pairing. The Jahn-Teller character of the important phonons in fullerides plays a crucial role for this result. To describe effects of phonons in cuprates, we derive a t-J model with phonons from the three-band model. Using exact diagonalization for small clusters, we find that the anomalous softening of the half-breathing phonon as well as its doping dependence can be explained. By comparing the solution of the t-J model with the Hartree-Fock approximation for the three-band model, we address results obtained in the local-density approximation for cuprates. We find that genuine many-body results, due to the interplay between the electron-electron and electron-phonon interactions, play an important role for the the results in the t-J model. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

"Anomalous" excitation in hydrogen-bonded molecular crystals - a Raman scattering study of specifically deuterated acetanilide (C 6D 5-CONH-CD 3)

Science.gov (United States)

Sauvajol, J. L.; De Nunzio, G.; Almairac, R.; Moret, J.; Barthés, M.; Bataillon, Place E.

1991-01-01

The focus of experimental and theoretical works about crystalline Acetanilide has been the "anomalous" temperature-dependent ir absorption and Raman peaks at about 1650 cm -1 and the multiband structure in the N-H stretch region. A lively discussion about the assignment of these "anomalous" bands has arisen and is still in progress. The present Raman experiments should be placed in this context as an attempt to identify the molecular degrees of freedom which originate the "anomalous" bands. In this aim Raman experiments have been performed on specifically deuterated Acetanilide [C 6D 5-CONH-CD 3] single crystal in the low-frequency (phonon) and C=O stretching regions. On cooling a distinct band at about 1495 cm -1 increases in intensity. We assign this peak to the equivalent of the 1650 cm -1 band in Acetanilide. The temperature dependence of this Raman line was studied. The results are discussed in the light of the models proposed to explain the anomalous behaviour of the 1650 cm -1 Raman line in Acetanilide.

Remarkable reduction of thermal conductivity in phosphorene phononic crystal

International Nuclear Information System (INIS)

Xu, Wen; Zhang, Gang

2016-01-01

Phosphorene has received much attention due to its interesting physical and chemical properties, and its potential applications such as thermoelectricity. In thermoelectric applications, low thermal conductivity is essential for achieving a high figure of merit. In this work, we propose to reduce the thermal conductivity of phosphorene by adopting the phononic crystal structure, phosphorene nanomesh. With equilibrium molecular dynamics simulations, we find that the thermal conductivity is remarkably reduced in the phononic crystal. Our analysis shows that the reduction is due to the depressed phonon group velocities induced by Brillouin zone folding, and the reduced phonon lifetimes in the phononic crystal. Interestingly, it is found that the anisotropy ratio of thermal conductivity could be tuned by the ‘non-square’ pores in the phononic crystal, as the phonon group velocities in the direction with larger projection of pores is more severely suppressed, leading to greater reduction of thermal conductivity in this direction. Our work provides deep insight into thermal transport in phononic crystals and proposes a new strategy to reduce the thermal conductivity of monolayer phosphorene. (paper)

Phonon localization transition in relaxor ferroelectric PZN-5%PT

International Nuclear Information System (INIS)

Manley, Michael E.; Christianson, Andrew D.; Abernathy, Douglas L.; Sahul, Raffi

2017-01-01

Relaxor ferroelectric behavior occurs in many disordered ferroelectric materials but is not well understood at the atomic level. Recent experiments and theoretical arguments indicate that Anderson localization of phonons instigates relaxor behavior by driving the formation of polar nanoregions (PNRs). Here, we use inelastic neutron scattering to observe phonon localization in relaxor ferroelectric PZN-5%PT (0.95[Pb(Zn 1/3 Nb 2/3 )O 3 ]–0.05PbTiO 3 ) and detect additional features of the localization process. In the lead, up to phonon localization on cooling, the local resonant modes that drive phonon localization increase in number. The increase in resonant scattering centers is attributed to a known increase in the number of locally off centered Pb atoms on cooling. The transition to phonon localization occurs when these random scattering centers increase to a concentration where the Ioffe-Regel criterion is satisfied for localizing the phonon. Finally, we also model the effects of damped mode coupling on the observed phonons and phonon localization structure.

Vibrational Raman optical activity of ketose monosaccharides

Science.gov (United States)

Bell, Alasdair F.; Hecht, Lutz; Barron, Laurence D.

1995-07-01

The vibrational Raman optical activity (ROA) spectra of the four ketose sugars D-fructose, L-sorbose, D-tagatose and D-psicose in aqueous solution, which have been measured in backscattering in the range ≈250-1500 cm -1, are reported. These results are combined with those from a previous ROA study of aldose and pentose sugars in an attempt to establish new vibrational assignments and to verify old ones. The high information content of these spectra provides a new perspective on all the central features of monosaccharide stereochemistry including dominant anomeric configuration, ring conformation, exocyclic CH 2OH group conformation and relative disposition of the hydroxyl groups around the ring.

Transition polarizability model of induced resonance Raman optical activity

Czech Academy of Sciences Publication Activity Database

Yamamoto, S.; Bouř, Petr

2013-01-01

Roč. 34, č. 25 (2013), s. 2152-2158 ISSN 0192-8651 R&D Projects: GA ČR GAP208/11/0105; GA ČR GA13-03978S; GA MŠk(CZ) LH11033 Grant - others:AV ČR(CZ) M200551205 Institutional support: RVO:61388963 Keywords : induced resonance Raman optical activity * europium complexes * density functional computations * light scattering Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.601, year: 2013

Explicit versus Implicit Solvent Modeling of Raman Optical Activity Spectra

Czech Academy of Sciences Publication Activity Database

Hopmann, K. H.; Ruud, K.; Pecul, M.; Kudelski, A.; Dračínský, Martin; Bouř, Petr

2011-01-01

Roč. 115, č. 14 (2011), s. 4128-4137 ISSN 1520-6106 R&D Projects: GA MŠk(CZ) LH11033; GA ČR GAP208/11/0105 Grant - others:AV ČR(CZ) M200550902 Institutional research plan: CEZ:AV0Z40550506 Keywords : raman optical activity * lactamide * solvent models Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.696, year: 2011

NATO Advanced Study Institute on Nonequilibrium Phonon Dynamics

CERN Document Server

1985-01-01

Phonons are always present in the solid state even at an absolute temperature of 0 K where zero point vibrations still abound. Moreover, phonons interact with all other excitations of the solid state and, thereby, influence most of its properties. Historically experimental information on phonon transport came from measurements of thermal conductivity. Over the past two decades much more, and much more detailed, information on phonon transport and on many of the inherent phonon interaction processes have come to light from experiments which use nonequilibrium phonons to study their dynamics. The resultant research field has most recently blossomed with the development of ever more sophisticated experimental and theoretical methods which can be applied to it. In fact, the field is moving so rapidly that new members of the research community have difficulties in keeping up to date. This NATO Advanced Study Institute (ASI) was organized with the objective of overcoming the information barrier between those expert...

Single Molecule Instrument for Surface Enhanced Raman Optical Activity of Biomolecules, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Stereochemistry is an essential element of our organic life. Only certain enantiomers are useful as drugs for the human body. Raman optical activity (ROA) provides...

Single Molecule Instrument for Surface Enhanced Raman Optical Activity of Biomolecules, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Stereochemistry is an essential element of our organic life. Only certain enantiomers are useful as drugs for the human body. Raman Optical Activity (ROA) and...

Photoelectrochemical and Raman characterization of nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

Energy Technology Data Exchange (ETDEWEB)

Kozytskiy, A.V. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Stroyuk, O.L., E-mail: stroyuk@inphyschem-nas.kiev.ua [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Kuchmiy, S.Ya. [L.V. Pysarzhevsky Institute of Physical Chemistry of National Academy of Sciences of Ukraine, 31 Nauky Av., 03028 Kyiv (Ukraine); Mazanik, A.V.; Poznyak, S.K. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A., E-mail: streltea@bsu.by [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Dzhagan, V.M., E-mail: dzhagan@isp.kiev.ua [V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky Av., 03028 Kyiv (Ukraine)

2014-07-01

Properties of CdS nanoparticles (NPs) grown by successive ionic layer adsorption and reaction (SILAR) method on the surface of electrodeposited ZnO films were studied by Raman, photocurrent and UV–Vis absorption spectroscopies. The CdS nanoparticles deposited at a SILAR cycle number (N) from 5 to 10 exhibit a broadening of the band gap (E{sub g}) by 0.17–0.31 eV as compared with that of the CdS particles grown at N = 30. The size quantization of the interband transition energy in CdS nanoparticles is in accordance with the Raman spectroscopic data demonstrating a considerable increase in the LO peak intensity with increasing the N from 5 to 10 as a result of transition to resonant light scattering. The spectral width of the LO peak decreases from 50 to 15 cm{sup −1} as the N increases from 5 to 30 reflecting a less pronounced effect of the nanoparticle surface on the phonon scattering. A large spectral width of the Raman peaks is assumed to originate from a complex structure of the CdS nanoparticles comprising crystallinity domains that can affect the phonon confinement. The photocurrent spectroscopy of ZnO/CdS heterostructures showed that the band gap of CdS NPs deposited at N > 20 is smaller by ∼ 0.08 eV than that of bulk cadmium sulfide. It was concluded that this effect is not associated with photoexcitation of structural defects but rather reflects intrinsic electronic properties of SILAR-deposited CdS nanoparticles. - Highlights: • Visible-light-sensitive ZnO/CdS heterostructures were prepared by SILAR. • A large Raman peak width originates from a complex structure of CdS nanoparticles. • Vibrational properties of CdS nanoparticles depend on SILAR cycle number.

Photoelectrochemical and Raman characterization of nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method

International Nuclear Information System (INIS)

Kozytskiy, A.V.; Stroyuk, O.L.; Kuchmiy, S.Ya.; Mazanik, A.V.; Poznyak, S.K.; Streltsov, E.A.; Kulak, A.I.; Korolik, O.V.; Dzhagan, V.M.

2014-01-01

Properties of CdS nanoparticles (NPs) grown by successive ionic layer adsorption and reaction (SILAR) method on the surface of electrodeposited ZnO films were studied by Raman, photocurrent and UV–Vis absorption spectroscopies. The CdS nanoparticles deposited at a SILAR cycle number (N) from 5 to 10 exhibit a broadening of the band gap (E g ) by 0.17–0.31 eV as compared with that of the CdS particles grown at N = 30. The size quantization of the interband transition energy in CdS nanoparticles is in accordance with the Raman spectroscopic data demonstrating a considerable increase in the LO peak intensity with increasing the N from 5 to 10 as a result of transition to resonant light scattering. The spectral width of the LO peak decreases from 50 to 15 cm −1 as the N increases from 5 to 30 reflecting a less pronounced effect of the nanoparticle surface on the phonon scattering. A large spectral width of the Raman peaks is assumed to originate from a complex structure of the CdS nanoparticles comprising crystallinity domains that can affect the phonon confinement. The photocurrent spectroscopy of ZnO/CdS heterostructures showed that the band gap of CdS NPs deposited at N > 20 is smaller by ∼ 0.08 eV than that of bulk cadmium sulfide. It was concluded that this effect is not associated with photoexcitation of structural defects but rather reflects intrinsic electronic properties of SILAR-deposited CdS nanoparticles. - Highlights: • Visible-light-sensitive ZnO/CdS heterostructures were prepared by SILAR. • A large Raman peak width originates from a complex structure of CdS nanoparticles. • Vibrational properties of CdS nanoparticles depend on SILAR cycle number

Phononic crystals and elastodynamics: Some relevant points

Directory of Open Access Journals (Sweden)

N. Aravantinos-Zafiris

2014-12-01

Full Text Available In the present paper we review briefly some of the first works on wave propagation in phononic crystals emphasizing the conditions for the creation of acoustic band-gaps and the role of resonances to the band-gap creation. We show that useful conclusions in the analysis of phononic band gap structures can be drawn by considering the mathematical similarities of the basic classical wave equation (Helmholtz equation with Schrödinger equation and by employing basic solid state physics concepts and conclusions regarding electronic waves. In the second part of the paper we demonstrate the potential of phononic systems to be used as elastic metamaterials. This is done by demonstrating negative refraction in phononic crystals and subwavelength waveguiding in a linear chain of elastic inclusions, and by proposing a novel structure with close to pentamode behavior. Finally the potential of phononic structures to be used in liquid sensor applications is discussed and demonstrated.

Phonon shift in chemically exfoliated WS2 nanosheet

Science.gov (United States)

Sarkar, Abdus Salam; Pal, Suman Kalyan

2018-04-01

We have synthesized few layer WS2 nanosheets in a low boiling point solvent. Few layer of WS2 sheets are characterized by various techniques such as UV-visible and Raman spectroscopy, transmission electron microscopy (TEM), atomic force microscopy (AFM) and scanning electron microscopy (SEM). UV-Vis absorption spectra confirm the well dispersed in isopropyl alcohol. SEM and TEM images indicate the sheet like morphology of WS2. Atomic force microscopy image and room temperature Raman spectroscopy confirm the exfoliation of few layer (4-5 layer) of WS2. Further, Raman spectroscopy was used as a meteorology tool to determine the temperature co-efficient. We have systematically investigated the temperature dependent Raman spectroscopic behavior of few layer WS2. Our results depict the softening of the Raman modes E12g in plane vibration and A1g out of plane vibration with increasing the temperature from 77 K to 300 K. Softening of the Raman modes could be explained in terms of the double resonance which is active in the layered materials. The observed temperature coefficients for two Raman peaks E12g and A1g, are - 0.022 cm-1 and -0.009 cm-1, respectively.

Temperature dependence of phonons in pyrolitic graphite

International Nuclear Information System (INIS)

Brockhouse, B.N.; Shirane, G.

1977-01-01

Dispersion curves for longitudinal and transverse phonons propagating along and near the c-axis in pyrolitic graphite at temperatures between 4 0 K and 1500 0 C have been measured by neutron spectroscopy. The observed frequencies decrease markedly with increasing temperature (except for the transverse optical ''rippling'' modes in the hexagonal planes). The neutron groups show interesting asymmetrical broadening ascribed to interference between one phonon and many phonon processes

Acoustic phonon dispersion of CoSi2

International Nuclear Information System (INIS)

Weiss, L.; Rumyantsev, A.Yu.; Ivanov, A.S.

1985-01-01

The acoustical phonon dispersion curves of CoSi 2 are measured at room temperature along the main symmetry directions by means of coherent one-phonon scattering of thermal neutrons. The dispersion curves are compared with those of Ge, Si, and the fluorite structure types as CaF 2 and UO 2 . From the slope of the phonon dispersion curves at the GAMMA-point the elastic constants have been obtained

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei; Ren, Shang-Fen

2011-01-01

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

KAUST Repository

Cheng, Wei

2011-03-10

Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

Thermal transport in phononic crystals: The role of zone folding effect

Science.gov (United States)

Dechaumphai, Edward; Chen, Renkun

2012-04-01

Recent experiments [Yu et al., Nature Nanotech 5, 718 (2010); Tang et al., Nano Lett. 10, 4279 (2010); Hopkins etal., Nano Lett. 11, 107(2011)] on silicon based nanoscale phononic crystals demonstrated substantially reduced thermal conductivity compared to bulk Si, which cannot be explained by incoherent phonon boundary scattering within the Boltzmann Transport Equation (BTE). In this paper, partial coherent treatment of phonons, where phonons are regarded as either wave or particles depending on their frequencies, was considered. Phonons with mean free path smaller than the characteristic size of phononic crystals are treated as particles and the transport in this regime is modeled by BTE with phonon boundary scattering taken into account. On the other hand, phonons with mean free path longer than the characteristic size are treated as waves. In this regime, phonon dispersion relations are computed using the Finite Difference Time Domain (FDTD) method and are found to be modified due to the zone folding effect. The new phonon spectra are then used to compute phonon group velocity and density of states for thermal conductivity modeling. Our partial coherent model agrees well with the recent experimental results on in-plane thermal conductivity of phononic crystals. Our study highlights the importance of zone folding effect on thermal transport in phononic crystals.

Effect of thermal phonons on the superconducting transition temperature

International Nuclear Information System (INIS)

Leavens, C.R.; Talbot, E.

1983-01-01

There is no consensus in the literature on whether or not thermal phonons depress the superconducting transition temperature T/sub c/. In this paper it is shown by accurate numerical solution of the real-frequency Eliashberg equations for the pairing self-energy phi and renormalization function Z that thermal phonons in the kernel for phi raise T/sub c/ but those in Z lower it by a larger amount so that the net effect is to depress T/sub c/. (A previous calculation which ignored the effect of thermal phonons in phi overestimated the suppression of T/sub c/ by at least a factor of 3.) It is shown how to switch off the thermal phonons in the imaginary-frequency Eliashberg equations, exactly for Z and approximately for phi. The real-frequency and approximate imaginary-frequency results for the depression of T/sub c/ by thermal phonons are in very satisfactory agreement. Thermal phonons are found to depress the transition temperature of Nb 3 Sn by only 2%. It is estimated that the suppression of T/sub c/ by thermal phonons saturates at about 50% in the limit of very strong electron-phonon coupling

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

International Nuclear Information System (INIS)

Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

2014-01-01

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs 1-x N x /GaAs 1-x N x :H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs 0.991 N 0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs 0.992 N 0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence

H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures

Science.gov (United States)

Giulotto, E.; Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

2014-12-01

The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs1-xNx/GaAs1-xNx:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs0.991N0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs0.992N0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

Phonon cross-plane transport and thermal boundary resistance: effect of heat source size and thermal boundary resistance on phonon characteristics

Science.gov (United States)

Ali, H.; Yilbas, B. S.

2016-09-01

Phonon cross-plane transport across silicon and diamond thin films pair is considered, and thermal boundary resistance across the films pair interface is examined incorporating the cut-off mismatch and diffusive mismatch models. In the cut-off mismatch model, phonon frequency mismatch for each acoustic branch is incorporated across the interface of the silicon and diamond films pair in line with the dispersion relations of both films. The frequency-dependent and transient solution of the Boltzmann transport equation is presented, and the equilibrium phonon intensity ratios at the silicon and diamond film edges are predicted across the interface for each phonon acoustic branch. Temperature disturbance across the edges of the films pair is incorporated to assess the phonon transport characteristics due to cut-off and diffusive mismatch models across the interface. The effect of heat source size, which is allocated at high-temperature (301 K) edge of the silicon film, on the phonon transport characteristics at the films pair interface is also investigated. It is found that cut-off mismatch model predicts higher values of the thermal boundary resistance across the films pair interface as compared to that of the diffusive mismatch model. The ratio of equilibrium phonon intensity due to the cut-off mismatch over the diffusive mismatch models remains >1 at the silicon edge, while it becomes <1 at the diamond edge for all acoustic branches.

Investigation of the Full Spectrum Phonon Lifetime in Thin Silicon Films from the Bulk Spectral Phonon Mean-Free-Path Distribution by Using Kinetic Theory

Energy Technology Data Exchange (ETDEWEB)

Jin, Jae Sik [Chosun College of Science and Technology, Gwangju (Korea, Republic of)

2017-03-15

Phonon dynamics in nanostructure is critically important to thermoelectric and optoelectronic devices because it determines the transport and other crucial properties. However, accurately evaluating the phonon lifetimes is extremely difficult. This study reports on the development of a new semi-empirical method to estimate the full-spectrum phonon lifetimes in thin silicon films at room temperature based on the experimental data on the phonon mean-free-path spectrum in bulk silicon and a phenomenological consideration of phonon transport in thin films. The bulk of this work describes the theory and the validation; then, we discuss the trend of the phonon lifetimes in thin silicon films when their thicknesses decrease.

Anharmonic effects in IR, Raman, and Raman optical activity spectra of alanine and proline zwitterions.

Science.gov (United States)

Danecek, Petr; Kapitán, Josef; Baumruk, Vladimír; Bednárová, Lucie; Kopecký, Vladimír; Bour, Petr

2007-06-14

The difference spectroscopy of the Raman optical activity (ROA) provides extended information about molecular structure. However, interpretation of the spectra is based on complex and often inaccurate simulations. Previously, the authors attempted to make the calculations more robust by including the solvent and exploring the role of molecular flexibility for alanine and proline zwitterions. In the current study, they analyze the IR, Raman, and ROA spectra of these molecules with the emphasis on the force field modeling. Vibrational harmonic frequencies obtained with 25 ab initio methods are compared to experimental band positions. The role of anharmonic terms in the potential and intensity tensors is also systematically explored using the vibrational self-consistent field, vibrational configuration interaction (VCI), and degeneracy-corrected perturbation calculations. The harmonic approach appeared satisfactory for most of the lower-wavelength (200-1800 cm(-1)) vibrations. Modern generalized gradient approximation and hybrid density functionals, such as the common B3LYP method, provided a very good statistical agreement with the experiment. Although the inclusion of the anharmonic corrections still did not lead to complete agreement between the simulations and the experiment, occasional enhancements were achieved across the entire region of wave numbers. Not only the transitional frequencies of the C-H stretching modes were significantly improved but also Raman and ROA spectral profiles including N-H and C-H lower-frequency bending modes were more realistic after application of the VCI correction. A limited Boltzmann averaging for the lowest-frequency modes that could not be included directly in the anharmonic calculus provided a realistic inhomogeneous band broadening. The anharmonic parts of the intensity tensors (second dipole and polarizability derivatives) were found less important for the entire spectral profiles than the force field anharmonicities (third

Computational modeling of geometry dependent phonon transport in silicon nanostructures

Science.gov (United States)

Cheney, Drew A.

Recent experiments have demonstrated that thermal properties of semiconductor nanostructures depend on nanostructure boundary geometry. Phonons are quantized mechanical vibrations that are the dominant carrier of heat in semiconductor materials and their aggregate behavior determine a nanostructure's thermal performance. Phonon-geometry scattering processes as well as waveguiding effects which result from coherent phonon interference are responsible for the shape dependence of thermal transport in these systems. Nanoscale phonon-geometry interactions provide a mechanism by which nanostructure geometry may be used to create materials with targeted thermal properties. However, the ability to manipulate material thermal properties via controlling nanostructure geometry is contingent upon first obtaining increased theoretical understanding of fundamental geometry induced phonon scattering processes and having robust analytical and computational models capable of exploring the nanostructure design space, simulating the phonon scattering events, and linking the behavior of individual phonon modes to overall thermal behavior. The overall goal of this research is to predict and analyze the effect of nanostructure geometry on thermal transport. To this end, a harmonic lattice-dynamics based atomistic computational modeling tool was created to calculate phonon spectra and modal phonon transmission coefficients in geometrically irregular nanostructures. The computational tool is used to evaluate the accuracy and regimes of applicability of alternative computational techniques based upon continuum elastic wave theory. The model is also used to investigate phonon transmission and thermal conductance in diameter modulated silicon nanowires. Motivated by the complexity of the transmission results, a simplified model based upon long wavelength beam theory was derived and helps explain geometry induced phonon scattering of low frequency nanowire phonon modes.

Four-phonon scattering significantly reduces intrinsic thermal conductivity of solids

Science.gov (United States)

Feng, Tianli; Lindsay, Lucas; Ruan, Xiulin

2017-10-01

For decades, the three-phonon scattering process has been considered to govern thermal transport in solids, while the role of higher-order four-phonon scattering has been persistently unclear and so ignored. However, recent quantitative calculations of three-phonon scattering have often shown a significant overestimation of thermal conductivity as compared to experimental values. In this Rapid Communication we show that four-phonon scattering is generally important in solids and can remedy such discrepancies. For silicon and diamond, the predicted thermal conductivity is reduced by 30% at 1000 K after including four-phonon scattering, bringing predictions in excellent agreement with measurements. For the projected ultrahigh-thermal conductivity material, zinc-blende BAs, a competitor of diamond as a heat sink material, four-phonon scattering is found to be strikingly strong as three-phonon processes have an extremely limited phase space for scattering. The four-phonon scattering reduces the predicted thermal conductivity from 2200 to 1400 W/m K at room temperature. The reduction at 1000 K is 60%. We also find that optical phonon scattering rates are largely affected, being important in applications such as phonon bottlenecks in equilibrating electronic excitations. Recognizing that four-phonon scattering is expensive to calculate, in the end we provide some guidelines on how to quickly assess the significance of four-phonon scattering, based on energy surface anharmonicity and the scattering phase space. Our work clears the decades-long fundamental question of the significance of higher-order scattering, and points out ways to improve thermoelectrics, thermal barrier coatings, nuclear materials, and radiative heat transfer.

Diamagnetic Raman Optical Activity of Chlorine, Bromine, and Iodine Gases

Czech Academy of Sciences Publication Activity Database

Šebestík, Jaroslav; Kapitán, J.; Pačes, Ondřej; Bouř, Petr

2016-01-01

Roč. 55, č. 10 (2016), s. 3504-3508 ISSN 1433-7851 R&D Projects: GA ČR GA13-03978S; GA ČR(CZ) GA14-00431S; GA ČR(CZ) GA16-05935S Institutional support: RVO:61388963 Keywords : angular momentum theory * diamagnetic molecules * excited electronic states * magnetic field * Raman optical activity Subject RIV: CC - Organic Chemistry Impact factor: 11.994, year: 2016

Mode-dependent dispersion in Raman line shapes: Observation and implications from ultrafast Raman loss spectroscopy

International Nuclear Information System (INIS)

Umapathy, S.; Mallick, B.; Lakshmanna, A.

2010-01-01

Ultrafast Raman loss spectroscopy (URLS) enables one to obtain the vibrational structural information of molecular systems including fluorescent materials. URLS, a nonlinear process analog to stimulated Raman gain, involves a narrow bandwidth picosecond Raman pump pulse and a femtosecond broadband white light continuum. Under nonresonant condition, the Raman response appears as a negative (loss) signal, whereas, on resonance with the electronic transition the line shape changes from a negative to a positive through a dispersive form. The intensities observed and thus, the Franck-Condon activity (coordinate dependent), are sensitive to the wavelength of the white light corresponding to a particular Raman frequency with respect to the Raman pump pulse wavelength, i.e., there is a mode-dependent response in URLS.

Magnetic, ferroelectric, and spin phonon coupling studies of Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} multiferroic Z-type hexaferrite

Energy Technology Data Exchange (ETDEWEB)

Raju, N.; Shravan Kumar Reddy, S.; Ramesh, J.; Gopal Reddy, Ch.; Yadagiri Reddy, P., E-mail: yadagirireddy@yahoo.com; Rama Reddy, K. [Department of Physics, Osmania University, Hyderabad-500007 (India); Sathe, V. G.; Raghavendra Reddy, V. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452001 (India)

2016-08-07

The magnetic, Raman, ferroelectric, and in-field {sup 57}Fe Mössbauer studies of polycrystalline multiferroic Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} are reported in this paper. From the magnetization studies, it is observed that the sample is soft magnetic in nature with low temperature magnetic spin transitions like longitudinal to transverse conical structure around 130 K and change in magnetic crystalline anisotropy from conical to planar structure at 250 K. Ferroelectric studies of the sample exhibit the spontaneous polarization at low temperature. Strong spin phonon and spin lattice coupling is observed through low temperature Raman spectroscopy. From the in-field {sup 57}Fe Mössbauer spectroscopy, spin up and spin down site occupations of Fe ions are calculated in the unit cell.

Generation and detection of high-energy phonons by superconducting junctions

International Nuclear Information System (INIS)

Singer, I.L.

1976-01-01

Superconducting tunnel junctions are used to investigate the dynamics of energy exchange that takes place in superconductors driven out of equilibrium. In a Sn junction biased at a voltage V much greater than 2Δ(Sn)/e, the tunneling current sustains a continual energy exchange amongst the quasiparticles, phonons, and Cooper pairs. Repeatedly, high-energy quasiparticles decay, emitting phonons; and phonons with energy greater than 2Δ(Sn) break pairs, producing quasiparticles. The phonon-induced component of the current is recovered by synchronously detecting the full tunneling current with respect to a small modulation current in the generator. Sharp onsets observed at intervals of the gap energies require that the escaping phonons are produced by the direct decay of the injected quasiparticles and are not merely the high-energy tail of the thermalized phonons. Both primary and secondary phonons can be abserved distinctly. Theoretical transconductance curves have been computed. The experimental and theoretical curves are in good qualitative agreement. A more detailed comparison suggests that the escape rate of high-energy phonons depends on the energy of the phonons. The dependence of the observed transconductance signal on the temperature and the total junction thickness suggests that the presence of quasiparticles plays a major role in the escape of high-energy phonons. The dependence on temperature can be fitted to exp(b/kT), 0.74 less than b less than 1.05 MeV. It is speculated that the excitation energy is first transported across the superconductor and then carried out of the film by the phonons. It is concluded that high-energy phonons are a sensitive probe of the very reabsorption effects that make their escape so unlikely, and analysis of the detected phonons rich details of the behavior of superconductors removed from equilibrium

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

Science.gov (United States)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

Raman studies of BEDT-TTF molecule-based organic superconductors

International Nuclear Information System (INIS)

Lin, Y.; Eldridge, J. E.; Schlueter, J.; Wang, H. H.; Kini, A. M.

2001-01-01

The temperature dependence of the frequencies of the Raman features due to ν 9 (A g ) and ν 60 (B 3g ) modes has been measured in the BEDT-TTF (ET) molecule-based organic superconductors κ-(ET) 2 Cu[N(CN) 2 ]Br, κ-(ET) 2 Cu[N(CN) 2 ]Cl, α t -(ET) 2 I 3 , and β-(ET) 2 AuI 2 . The frequency of the ν 9 (A g ) mode was observed to soften in κ-(ET) 2 Cu[N(CN) 2 ]Br and κ-(ET) 2 Cu[N(CN) 2 ]Cl at low temperatures where NMR data indicated antiferromagnetic fluctuations, providing evidence of spin-phonon interactions. The result is also compared with a very recent theory which deals with the effect of electronic correlations on the frequencies of the molecular phonon modes. We observed a peak splitting for the ν 60 (B 3g ) mode in α t -(ET) 2 I 3 below 190 K, where an incommensurate superstructure was reported, and a frequency decrease of 1.7±0.4 cm -1 for the upper component of the ν 60 (B 3g ) mode in the superconducting compound, demonstrating further the unusual properties of this mode

Monitoring of zwitterionic proline and alanine conformational space by raman optical activity

Czech Academy of Sciences Publication Activity Database

Kapitán, Josef; Bouř, Petr; Baumruk, V.

2005-01-01

Roč. 12, č. 1 (2005), s. 30 ISSN 1211-5894. [Meeting of Structural Biologists /4./. 10.03.2005-21.03.2005, Nové Hrady] Institutional research plan: CEZ:AV0Z40550506 Keywords : proline * Raman optical activity Subject RIV: CF - Physical ; Theoretical Chemistry

Optical pumping of hot phonons in GaAs

International Nuclear Information System (INIS)

Collins, C.L.; Yu, P.Y.

1982-01-01

Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

Nonlinear phononics and structural control of strongly correlated materials

Energy Technology Data Exchange (ETDEWEB)

Mankowsky, Roman

2016-01-20

Mid-infrared light pulses can be used to resonantly excite infrared-active vibrational modes for the phase control of strongly correlated materials on subpicosecond timescales. As the energy is transferred directly into atomic motions, dissipation into the electronic system is reduced, allowing for the emergence of unusual low energy collective properties. Light-induced superconductivity, insulator-metal transitions and melting of magnetic order demonstrate the potential of this method. An understanding of the mechanism, by which these transitions are driven, is however missing. The aim of this work is to uncover this process by investigating the nonlinear lattice dynamics induced by the excitation and to elucidate their contribution to the modulation of collective properties of strongly correlated materials. The first signature of nonlinear lattice dynamics was reported in the observation of coherent phonon oscillations, resonant with the excitation of an infrared-active phonon mode in a manganite. This nonlinear phononic coupling can be described within a model, which predicts not only oscillatory coherent phonons dynamics but also directional atomic displacements along the coupled modes on average, which could cause the previously observed transitions. We verified this directional response and quantified the anharmonic coupling constant by tracing the atomic motions in a time-resolved hard X-ray diffraction experiment with sub-picometer spatial and femtosecond temporal resolution. In a subsequent study, we investigated the role of nonlinear lattice dynamics in the emergence of superconductivity far above the equilibrium transition temperature, an intriguing effect found to follow lattice excitation of YBa{sub 2}Cu{sub 3}O{sub 6+x}. By combining density functional theory (DFT) calculations of the anharmonic coupling constants with time-resolved X-ray diffraction experiments, we identified a structural rearrangement, which appears and decays with the same temporal

Lifetime of the phonons in the PLT ceramic

Energy Technology Data Exchange (ETDEWEB)

Barba-Ortega, J., E-mail: jjbarba@unal.edu.co; Joya, M. R., E-mail: mrinconj@unal.edu.co [Departamento de Física, Universidad Nacional de Colombia, carrera 30 # 45-03, Bogotá 1149 (Colombia); Londoño, F. A., E-mail: flondono@fisica.udea.edu.co [Instituto de Física, Universidad de Antioquia, Calle 67 #53-108 Of.6-105, Medellin (Colombia)

2014-11-05

The lifetimes at higher temperatures on lanthanum-modified lead titanate (PLT) are mainly due to the anharmonic decay of optical phonons into low-energy phonons. The temperature-independent contributions from inherent crystal defects and from boundary scattering become comparable to the phonon scattering contribution at lower temperatures. The thermal interaction is large at higher temperatures which decreases the phonon mean free path, and so the decay lifetime decreases as the temperature of the system is increased. This leads to the increased line width at higher temperatures. We made an estimate of the lifetimes for different concentrations and temperatures in PLT.

Basic equations of the quasiparticle-phonon nuclear model with the effects due to the Pauli principle and the phonon ground state correlations

International Nuclear Information System (INIS)

Nguyen Dinh Dang; Voronov, V.V.

1983-01-01

A system of basic equations of the quasiparticle-phonon model is obtained for energies and a structure of excited states described by the wave functions containing one- and two-phonon components. The effects due to the Pauli principle for two-phonon components and the phonon ground state correlations of a spherical nucleus are taken here into account. The quantitative estimations of these effects are given by a simplified scheme. The relation between these equations with the results from other theoretical approaches is discussed

Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials

Science.gov (United States)

Yu, Jen-Kan; Mitrovic, Slobodan; Heath, James R.

2016-08-16

A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.

Resonant Magnon-Phonon Polaritons in a Ferrimagnet