Influence of substrate on the performances of semi-insulating GaAs detectors

CERN Document Server

Baldini, R; Nava, F; Canali, C; Lanzieri, C

2000-01-01

A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

Damage related deep electron levels in ion implanted GaAs

International Nuclear Information System (INIS)

Allsopp, D.W.E.; Peaker, A.R.

1986-01-01

A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

On the modelling of semi-insulating GaAs including surface tension and bulk stresses

Energy Technology Data Exchange (ETDEWEB)

Dreyer, W.; Duderstadt, F.

2004-07-01

Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

CERN Document Server

Rogalla, M

1999-01-01

A model for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors is developed. The model is based on a field-enhanced electron capture of the EL2-defect. The influence of the compensation mechanism in SI-GaAs on the field distribution, leakage current density and charge collection properties of the detectors will be discussed. The detailed understanding allows then a device optimization. (author)

Performance study of radiation detectors based on semi-insulating GaAs with P+homo- and heterojunction blocking electrode

Czech Academy of Sciences Publication Activity Database

Dubecky, F.; Hulicius, Eduard; Frigeri, P.; Perd´ochová-Šagátová, A.; Zat´ko, B.; Hubík, Pavel; Gombia, E.; Boháček, P.; Pangrác, Jiří; Franchi, S.; Nečas, V.

2006-01-01

Roč. 563, - (2006), s. 159-162 ISSN 0168-9002 R&D Projects: GA AV ČR(CZ) IAA1010404 Grant - others:Slovak Grant Agency for Science(SK) 2/4151/24 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs radiation detector * blocking electrode * P + -N homojunction and heterojunction * gamma irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.185, year: 2006

Compilation of radiation damage test data cable insulating materials

CERN Document Server

Schönbacher, H; CERN. Geneva

1979-01-01

This report summarizes radiation damage test data on commercially available organic cable insulation and jacket materials: ethylene- propylene rubber, Hypalon, neoprene rubber, polyethylene, polyurethane, polyvinylchloride, silicone rubber, etc. The materials have been irradiated in a nuclear reactor to integrated absorbed doses from 5*10/sup 5/ to 5*10/sup 6/ Gy. Mechanical properties, e.g. tensile strength, elongation at break, and hardness, have been tested on irradiated and non-irradiated samples. The results are presented in the form of tables and graphs, to show the effect of the absorbed dose on the measured properties. (13 refs).

Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

International Nuclear Information System (INIS)

Tsia, M.; Fung, S.; Beling, C.D.

2001-01-01

Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

Radiation damage by high-energy electrons in GaAs: DLTS investigation

International Nuclear Information System (INIS)

Lehmann, B.

1991-10-01

An isothermal variation of the DLTS technique is developed and applied to the study of displacement damage in GaAs, through the determination of threshold energies and displacement cross sections. Its results correspond to those of an LED based method. A pronounced anisotropy is found for the threshold energy. A linearly increasing displacement probability function is shown to properly model the displacement cross section in direction, as compared with the direction which requires only a single step function. Differences in the damage between these two directions are as large as a factor of two. (orig.) [de

A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz). Pt. I. Experiments and Results

Energy Technology Data Exchange (ETDEWEB)

Jacob, K.; Frank, C.; Neubert, M.; Rudolph, P. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Ulrici, W. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Paul-Drude-Inst. fuer Festkoerperelektronik, Berlin (Germany); Jurisch, M. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Freiberger Compound Materials GmbH, Freiberg (Germany); Korb, J. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); GTT Technologies, Freiberg (Germany)

2000-07-01

In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the present paper to clarify which of the relationships of LEC growth could be used for a carbon control in the VCz-method characterized by the application of an inner chamber made from graphite to avoid selective As evaporation. In detail this comprised a study of the influence of several growth parameters like the water content of the boric oxide, the composition of the working atmosphere, the gas flow, a titanium gettering and additions of gallium oxide. As a result, for the first time carbon concentrations down to {approx} 10{sup 14} cm{sup -3} were obtained in 3{sup ''} (75 mm) diameter VCz crystals. (orig.)

Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors

CERN Document Server

Nava, F; Canali, C; Vittone, E; Polesello, P; Biggeri, U; Leroy, C

1999-01-01

The radiation damage in 100 mu m thick Schottky diodes made on semi-insulating undoped GaAs materials, were studied using alpha-, beta-, proton- and gamma-spectroscopy as well as I-V measurements. The results have been analysed within the framework of the Hecht model to investigate the influence of the plasma produced by short-range strongly ionising particles on the detector performance after 24 GeV proton irradiation. It has been found that with the mean free drift lengths for electrons and holes determined from alpha-spectra in overdepleted detectors, the charge collection efficiency for beta-particles, cce subbeta, is well predicted in the unirradiated detectors, while in the most irradiated ones, the cce subbeta is underestimated by more than 40%. The observed disagreement can be explained by assuming that the charge carrier recombination in the plasma region of such detectors, becomes significant.

Radiation effects in pigtailed GaAs and GaA1As LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1981-06-01

Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

Directory of Open Access Journals (Sweden)

Zhaoquan Zeng

2013-07-01

Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Variations in first principles calculated defect energies in GaAs and ...

Indian Academy of Sciences (India)

Keywords. Ab initio calculations; semi-insulating GaAs; point defects. ... We are focusing on gallium arsenide. .... gallium vacancy in S & L, P et al and N & Z will exist in triple ... gallium antisite defect that include relaxation, a negative. U-effect is ...

Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces

International Nuclear Information System (INIS)

Williams, R.S.

1982-01-01

Argon bombardment damage to (100) surfaces of Si, GaAs, and InP for sputter ion-gun potentials of 1, 2, and 3 kilovolts was studied using Rutherford backscattering. Initial damage rates and saturation damage levels were determined. Bombardment damage sensitivity increased for the sequence Si, GaAs, and InP. Saturation damage levels for Si and GaAs correspond reasonably to LSS projected range plus standard deviation estimates; damage to InP exceeded this level significantly. For an ion-gun potential of 3 keV, the initial sputter yield of P from an InP surface exceeded the sputter yield of In by four atoms per incident Ar projectile. (author)

Nature of radiation damage in ceramics

International Nuclear Information System (INIS)

Bunch, J.M.

1976-01-01

Efforts to determine the equivalence between different sources of radiation damage in ceramics are reviewed. The ways in which ceramics differ from metals are examined and proposed mechanisms for creation and stabilization of defects in insulators are outlined. Work on radiation damage in crystalline oxides is summarized and suggestions for further research are offered

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Science.gov (United States)

Jurisch, M.; Börner, F.; Bünger, Th.; Eichler, St.; Flade, T.; Kretzer, U.; Köhler, A.; Stenzenberger, J.; Weinert, B.

2005-02-01

The paper reviews the progress made in crystal growth of semi-insulating GaAs by liquid encapsulation Czochralski and vertical gradient freeze techniques during the last few years under the continuous need for cost reduction of the production process.

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

Energy Technology Data Exchange (ETDEWEB)

Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Fan, Dongsheng; Yu, Shuiqing [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); Zhao, Yanfei [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); Lee, Joon Sue [The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Jian [International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871 (China); The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Wang, Zhiming M. [Arkansas Institute for Nanoscale Material Sciences and Engineering, University of Arkansas, Fayetteville, AR 72701 (United States); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2013-07-15

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

Changes in the positron-electron momentum distribution in GaAs brought about by chopped light

International Nuclear Information System (INIS)

Li, S.; Fung, S.; Beling, C.D.; Ling, C.C.

2001-01-01

We report on an attempt to observe the EL2→ EL2 * transition in semi-insulating GaAs using Doppler broadening of annihilation radiation spectroscopy. Unlike the original observation of this transition using positron annihilation spectroscopy, the present method has sought to observe the production of EL2 * through a light chopping experiment, where on the half cycle of illumination the EL2 * state is formed and on the second half cycle the EL2 * thermally quenches back to EL2. While results are at a preliminary state we have obtained evidence for the production of EL2 * from the broad-band emission of a Xenon lamp. While calculations suggest that we should be able to see the EL2 * from the IR emission (1.3eV) of GaAs light emitting diodes we have not yet been able to achieve this. Reasons why are discussed. (orig.)

Subnanosecond linear GaAs photoconductive switching, revision 1

Science.gov (United States)

Druce, R. L.; Pocha, M. D.; Griffin, K. L.; Hofer, W. W.

Research was conducted in photoconductive switching for the purpose of generating subnanosecond pulses in the 25 to 50kV range. The very fast recombination rates of Gallium Arsenide (GaAs) was exploited to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is (approx. 10(-14) sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. Switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm was observed. The illumination source was a Nd:YAG laser operating at 1.06 microns.

Burst annealing of high temperature GaAs solar cells

Science.gov (United States)

Brothers, P. R.; Horne, W. E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

Burst annealing of high temperature GaAs solar cells

International Nuclear Information System (INIS)

Brothers, P.R.; Horne, W.E.

1991-01-01

One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

Response of GaAs charge storage devices to transient ionizing radiation

Science.gov (United States)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

Radiation damage in CTR magnet components

International Nuclear Information System (INIS)

Ullmaier, H.

1976-01-01

Data are reviewed (already existing or to be acquired) which should allow prediction of the behavior of large superconducting coils in the radiation field of a future fusion reactor. The electrical and mechanical stability of such magnets is determined by the irradiation induced deterioration of the magnet components, i.e., (a) changes in critical current, field and temperature of the superconductor (NbTi, A-15 phases), (b) resistivity increase in the stabilizer (Cu, Al), and (c) changes in mechanical and dielectric properties of insulators and spacers. Recent low temperature simulation experiments (with fission neutrons and heavy ions) show that the superconductor will not be the critical component of a fusion magnet--at least as far as radiation damage is concerned. Much more severe is the loss of stability due to the resistivity increase of the stabilizing material. It seems, however, that the magnitude of this effect can be predicted rather reliably and therefore taken into account in the coil design. Almost no data exist about the low temperature behavior of insulator and spacer materials in a radiation field. Furthermore, very little is known about the nature of the radiation damage in non-metals, which makes extrapolations of the few existing data to other materials or to other doses highly speculative. Only future experiments can decide if the insulators will be the limiting component of a CTR magnet or not

Subnanosecond linear GaAs photoconductive switching: Revision 1

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L.; Hofer, W.W.

1989-01-01

We are conducting research in photoconductive switching for the purpose of generating subnanosecond pulses in the 25--50kV range. We are exploiting the very fast recombination rates of Gallium Arsenide (GaAs) to explore the potential of GaAs as a closing and opening switch when operating in the linear mode (the linear mode is defined such that one carrier pair is generated for each photon absorbed). The closing time of a linear GaAs switch is theoretically limited by the characteristics of the laser pulse used to activate the switch (the carrier generation time in GaAs is /approximately/10/sup /minus/14/ sec) while the opening time is theoretically limited by the recombination time of the carriers. The recombination time is several ns for commercially available semi-insulating GaAs. Doping or neutron irradiation can reduce the recombination time to less than 100 ps. We have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps with neutron irradiated GaAs at fields of tens of kV/cm. The illumination source was a Nd:YAG laser operating at 1.06 /mu/m. 4 refs., 11 figs.

Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Directory of Open Access Journals (Sweden)

Warner Jeffrey H.

2017-01-01

Full Text Available GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD. The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Specific Effects of Ionizing Energy on the Displacement Damage Calculation in Insulators

International Nuclear Information System (INIS)

Vila, R.; Mota, F.; Ortiz, C. J.

2012-01-01

The level of damage expected in functional materials for future fusion reactors is generally much lower than structural materials, but the degradation of their physical properties is also generally observed at very low dose levels compared to the latter. Normally the properties of interest (DC Electrical resistivity, HF dielectric absorption, optical transmission etc.) degrade long before mechanical integrity is an issue. This weakness is in part related to the more important effects of ionizing energy on both, covalent and ionic, insulators or semiconductors. As irradiation in fission and fusion reactors (even spallation sources) also involves the participation of gamma radiation, it has to be taken into account for total damage calculation. In the case of ions, the energy partition provides the amount of electronic (ionizing) energy lost in the material. In general and regarding radiation, insulating materials can be divided in two groups depending on whether they experience radiolysis, (i.e. purely ionizing radiation can produce noticeable amounts of atomic displacements) or not. First group includes for example alkali halides and fluorides. But, although radiolysis is negligible in the second group (radiation-hard materials), collateral effects of ionizing radiation have been observed (when combined with displacement damage). Therefore it is important to make some comments about the concept and use of dpa (displacements per atom) in this large family of materials

Nuclear spin-lattice relaxation in n -type insulating and metallic GaAs single crystals

Science.gov (United States)

Lu, J.; Hoch, M. J. R.; Kuhns, P. L.; Moulton, W. G.; Gan, Z.; Reyes, A. P.

2006-09-01

The coupling of electron and nuclear spins in n-GaAs changes significantly as the donor concentration n increases through the insulator-metal critical concentration nC˜1.2×1016cm-3 . The present measurements of the Ga71 relaxation rates W made as a function of magnetic field (1-13T) and temperature (1.5-300K) for semi-insulating GaAs and for three doped n-GaAs samples with donor concentrations n=5.9×1015 , 7×1016 , and 2×1018cm-3 , show marked changes in the relaxation behavior with n . Korringa-like relaxation is found in both metallic samples for T30K phonon-induced nuclear quadrupolar relaxation is dominant. The relaxation rate measurements permit determination of the electron probability density at Ga71 sites. A small Knight shift of -3.3ppm was measured on the most metallic (2×1018cm-3) sample using magic-angle spinning at room temperature. For the n=5.9×1015cm-3 sample, a nuclear relaxation model involving the Fermi contact hyperfine interaction, rapid spin diffusion, and exchange coupled local moments is proposed. While the relaxation rate behavior with temperature for the weakly metallic sample, n=7×1016cm-3 , is similar to that found for the just-insulating sample, the magnetic field dependence is quite different. For the 5.9×1015cm-3 sample, increasing the magnetic field leads to a decrease in the relaxation rate, while for the 7×1016cm-3 sample this results in an increase in the relaxation rate ascribed to an increase in the density of states at the Fermi level as the Landau level degeneracy is increased.

Evaluation of 320x240 pixel LEC GaAs Schottky barrier X-ray imaging arrays, hybridized to CMOS readout circuit based on charge integration

CERN Document Server

Irsigler, R; Alverbro, J; Borglind, J; Froejdh, C; Helander, P; Manolopoulos, S; O'Shea, V; Smith, K

1999-01-01

320x240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements were of the Schottky barrier type and had a pitch of 38 mu m. The GaAs wafers were thinned down prior to the fabrication of the ohmic back contact. After dicing, the chips were indium bump, flip-chip bonded to CMOS readout circuits based on charge integration, and finally evaluated. A bias voltage between 50 and 100 V was sufficient to operate the detector. Results on I-V characteristics, noise behaviour and response to X-ray radiation are presented. Images of various objects and slit patterns were acquired by using a standard dental imaging X-ray source. The work done was a part of the XIMAGE project financed by the European Community (Brite-Euram). (author)

Transient radiation effects in GaAs semiconductor devices

International Nuclear Information System (INIS)

Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

1988-01-01

This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

Economical evaluation of damaged vacuum insulation panels in buildings

Science.gov (United States)

Kim, Y. M.; Lee, H. Y.; Choi, G. S.; Kang, J. S.

2015-12-01

In Korea, thermal insulation standard of buildings have been tightened annually to satisfy the passive house standard from the year 2009. The current domestic policies about disseminating green buildings are progressively conducted. All buildings should be the zero energy building in the year 2025, obligatorily. The method is applied to one of the key technologies for high-performance insulation for zero energy building. The vacuum insulation panel is an excellent high performance insulation. But thermal performance of damaged vacuum insulation panels is reduced significantly. In this paper, the thermal performance of damaged vacuum insulation panels was compared and analyzed. The measurement result of thermal performance depends on the core material type. The insulation of building envelope is usually selected by economic feasibility. To evaluate the economic feasibility of VIPs, the operation cost was analyzed by simulation according to the types and damaged ratio of VIPs

Annealing of proton-damaged GaAs and 1/f noise

NARCIS (Netherlands)

Chen, X.Y.; Folter, de L.C.

1997-01-01

GaAs layers were grown by MBE. The layers were then damaged by 3 MeV proton irradiation and later annealed. We performed Hall effect and low-frequency noise measurements at temperatures between 77 K and 300 K after each step. Several generation - recombination noise components created by proton

Neutron-damaged GaAs detectors for use in a Compton spectrometer

International Nuclear Information System (INIS)

Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

1992-01-01

Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

Specific features of the photoconductivity of semi-insulating cadmium telluride

Energy Technology Data Exchange (ETDEWEB)

Golubyatnikov, V. A.; Grigor’ev, F. I.; Lysenko, A. P., E-mail: aplysenko@hse.ru; Strogankova, N. I.; Shadov, M. B. [National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics (Russian Federation); Belov, A. G. [OAO GIREDMET State Research and Design Institute of the Rare-Metal Industry (Russian Federation)

2014-12-15

The effect of local illumination providing a high level of free-carrier injection on the conductivity of a sample of semi-insulating cadmium telluride and on the properties of ohmic contacts to the sample is studied. It is found that, irrespective of the illumination region, the contact resistance of ohmic contacts decreases and the concentration of majority carriers in the sample grows in proportion to the illumination intensity. It is shown that inherent heterogeneities in crystals of semi-insulating semiconductors can be studied by scanning with a light probe.

Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy

Science.gov (United States)

Boumenou, C. Kameni; Urgessa, Z. N.; Djiokap, S. R. Tankio; Botha, J. R.; Nel, J.

2018-04-01

In this study, cross-sectional surface potential imaging of n+/semi-insulating GaAs junctions is investigated by using amplitude mode kelvin probe force microscopy. The measurements have shown two different potential profiles, related to the difference in surface potential between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and the sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD values across the interface are much smaller than the calculated values (on average about 25% of the theoretical values) and increase with the electron density. Therefore, the results presented in study are only in qualitative agreement with the theory.

GaAs monolayer: Excellent SHG responses and semi metallic to metallic transition modulated by vacancy effect

Science.gov (United States)

Rozahun, Ilmira; Bahti, Tohtiaji; He, Guijie; Ghupur, Yasenjan; Ablat, Abduleziz; Mamat, Mamatrishat

2018-05-01

Monolayer materials are considered as a promising candidate for novel applications due to their attractive magnetic, electronic and optical properties. Investigation on nonlinear optical (NLO) properties and effect of vacancy on monolayer materials are vital to property modulations of monolayers and extending their applications. In this work, with the aid of first-principles calculations, the crystal structure, electronic, magnetic, and optical properties of GaAs monolayers with the vacancy were investigated. The result shows gallium arsenic (GaAs) monolayer produces a strong second harmonic generation (SHG) response. Meanwhile, the vacancy strongly affects structural, electronic, magnetic and optical properties of GaAs monolayers. Furthermore, arsenic vacancy (VAs) brings semi metallic to metallic transition, while gallium vacancy (VGa) causes nonmagnetic to magnetic conversion. Our result reveals that GaAs monolayer possesses application potentials in Nano-amplifying modulator and Nano-optoelectronic devices, and may provide useful guidance in designing new generation of Nano-electronic devices.

Base excision repair of chemotherapeutically-induced alkylated DNA damage predominantly causes contractions of expanded GAA repeats associated with Friedreich's ataxia.

Directory of Open Access Journals (Sweden)

Yanhao Lai

Full Text Available Expansion of GAA·TTC repeats within the first intron of the frataxin gene is the cause of Friedreich's ataxia (FRDA, an autosomal recessive neurodegenerative disorder. However, no effective treatment for the disease has been developed as yet. In this study, we explored a possibility of shortening expanded GAA repeats associated with FRDA through chemotherapeutically-induced DNA base lesions and subsequent base excision repair (BER. We provide the first evidence that alkylated DNA damage induced by temozolomide, a chemotherapeutic DNA damaging agent can induce massive GAA repeat contractions/deletions, but only limited expansions in FRDA patient lymphoblasts. We showed that temozolomide-induced GAA repeat instability was mediated by BER. Further characterization of BER of an abasic site in the context of (GAA20 repeats indicates that the lesion mainly resulted in a large deletion of 8 repeats along with small expansions. This was because temozolomide-induced single-stranded breaks initially led to DNA slippage and the formation of a small GAA repeat loop in the upstream region of the damaged strand and a small TTC loop on the template strand. This allowed limited pol β DNA synthesis and the formation of a short 5'-GAA repeat flap that was cleaved by FEN1, thereby leading to small repeat expansions. At a later stage of BER, the small template loop expanded into a large template loop that resulted in the formation of a long 5'-GAA repeat flap. Pol β then performed limited DNA synthesis to bypass the loop, and FEN1 removed the long repeat flap ultimately causing a large repeat deletion. Our study indicates that chemotherapeutically-induced alkylated DNA damage can induce large contractions/deletions of expanded GAA repeats through BER in FRDA patient cells. This further suggests the potential of developing chemotherapeutic alkylating agents to shorten expanded GAA repeats for treatment of FRDA.

Si3N4/Si/In0.05Ga0.95As/n endash GaAs metal endash insulator endash semiconductor devices

International Nuclear Information System (INIS)

Park, D.; Li, D.; Tao, M.; Fan, Z.; Botchkarev, A.E.; Mohammad, S.N.; Morkoc, H.

1997-01-01

We report a novel metal endash insulator endash semiconductor (MIS) structure exhibiting a pseudomorphic In 0.05 Ga 0.95 As layer on GaAs with interface state densities in the low 10 11 eV -1 cm -2 . The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about ±1.3 MV/cm. The 150-Angstrom-thick In 0.05 Ga 0.95 As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In 0.53 Ga 0.47 As channel MIS structures. Self-aligned gate depletion mode In 0.05 Ga 0.95 As metal endash insulator endash semiconductor field-effect transistors having 3 μm gate lengths exhibited field-effect bulk mobility of 1400 cm 2 /Vs and transconductances of about 170 mS/mm. copyright 1997 American Institute of Physics

Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

CERN Document Server

Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

2014-01-01

Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

Emission of circularly polarized recombination radiation from p-doped GaAs and GaAs0.62P0.38 under the impact of polarized electrons

International Nuclear Information System (INIS)

Fromme, B.; Baum, G.; Goeckel, D.; Raith, W.

1989-01-01

Circularly polarized light is emitted in radiative transitions of polarized electrons from the conduction to the valence band in GaAs or GaAs 1-x P x crystals. The degree of light polarization is directly related to the polarization of the conduction-band electrons at the instant of recombination and allows conclusions about the depolarization of electrons in the conduction band. The depolarization is caused by spin-relaxation processes. The efficiency of these processes depends on crystal type, crystal temperature, degree of doping, and kinetic energy of the electrons. Highly p-doped GaAs and GaAs 0.62 P 0.38 crystals (N A >1x10 19 atoms/cm 3 ) were bombarded with polarized electrons (initial polarization 38%), and the spectral distribution and the circular polarization of the emitted recombination radiation were measured. The initial kinetic energy of the electrons in the conduction band was varied between 5 and 1000 eV. The measurements of the spectral distribution show that the electrons are thermalized before recombination occurs, independent of their initial energy. An important thermalization process in this energy range is the excitation of crystal electrons by electron-hole pair creation. The circular polarization of the recombination radiation lies below 1% in the whole energy range. It decreases with increasing electron energy but is still of measurable magnitude at 100 eV in the case of GaAs 0.62 P 0.38 . The circular polarization is smaller for GaAs than for GaAs 0.62 P 0.38 , which we attribute to more efficient spin relaxation in GaAs

Report of the 13th IEA workshop on radiation effects in ceramic insulators

International Nuclear Information System (INIS)

2004-03-01

The 13th IEA Workshop on Radiation Effects in Ceramic Insulators, based on Annex II: Experimentation on Radiation Damage in Fusion Materials, to the IEA Implementing Agreement for a Programme of Research and Development on Radiation Damage in Fusion Materials, was held on the 9th, December, 2003, at Kyoto International Conference Center, in Kyoto, Japan, in conjunction with the 11th International Conference on Fusion Reactor Materials (ICFRM-11). 44 participants from 10 countries (26 from Japan, 5 from Spain, 3 from Belgium, 3 from USA, 2 from RF, each 1 from Austria, Greece, Italy, Romania, and UK) gathered together and discussed following issues extensively, with the newest experimental results, after the welcome remarks by one of the organizer and chairpersons, Dr. E.R. Hodgson of CIEMAT. Effects of electric field on radiation induced microstructural evolution, parasitic electrical current and voltage induced in cables and wires by radiation effects, optical materials, IFMIF related issues and fundamental aspects were discussed. Significant results such as an observation of γ-alumina and aluminum colloid formation for the Radiation Induced Electrical Degradation mechanism are obtained. This report is workshop summary, abstracts and documents of the 13th IEA Workshop on Radiation Effects in Ceramic Insulators. (author)

LO-phonon and plasmon coupling in neutron-transmutation-doped GaAs

International Nuclear Information System (INIS)

Kuriyama, K.; Sakai, K.; Okada, M.

1996-01-01

Coupling between the longitudinal-optic (LO) phonon mode and the longitudinal plasma mode in neutron-transmutation-doped (NTD) semi-insulating GaAs was studied using Raman-scattering spectroscopy and a Fourier-transform infrared spectrometer. When the electron concentration due to the activation of NTD impurities (Ge Ga and Se As ) approaches ∼8x10 16 cm -3 , the LO-phonon endash plasmon coupling is observed. This behavior is consistent with the free-electron absorption due to the activation of NTD impurities in samples annealed above 600 degree C. copyright 1996 The American Physical Society

Charging damage in floating metal-insulator-metal capacitors

NARCIS (Netherlands)

Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

2002-01-01

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage

Plasma damage in floating metal-insulator-metal capacitors

NARCIS (Netherlands)

Ackaert, Jan; Wang, Zhichun; De Backer, E.; Coppens, P.

2002-01-01

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

Plasma Damage in Floating Metal-Insulator-Metal Capacitors

NARCIS (Netherlands)

Ackaert, Jan; Wang, Zhichun; Backer, E.; Coppens, P.

2001-01-01

In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to reliability losses. The damage is caused by the build up of a voltage potential difference between

Construction of computational program of aging in insulating materials for searching reversed sequential test conditions to give damage equivalent to simultaneous exposure of heat and radiation

International Nuclear Information System (INIS)

Fuse, Norikazu; Homma, Hiroya; Okamoto, Tatsuki

2013-01-01

Two consecutive numerical calculations on degradation of polymeric insulations under thermal and radiation environment are carried out to simulate so-called reversal sequential acceleration test. The aim of the calculation is to search testing conditions which provide material damage equivalent to the case of simultaneous exposure of heat and radiation. At least following four parameters are needed to be considered in the sequential method; dose rate and exposure time in radiation, as well as temperature and aging time in heating. The present paper discusses the handling of these parameters and shows some trial calculation results. (author)

Radiation-induced effects in GaAs thin-film optical (10.6 μm) waveguides

International Nuclear Information System (INIS)

Share, S.; Epstein, A.S.; Monse, T.; Chang, W.S.C.; Chang, M.S.

1976-01-01

Two types of GaAs thin-film optical waveguide structures operating at 10.6 μm were examined before and after exposure to neutron and γ irradiation. The attenuation rate of the GaAs/n + -GaAs structure was particularly sensitive to neutron irradiation of 10 13 cm -2 and exhibited postirradiation annealing at 150 0 C. This is in contrast to the relative neutron irradiation insensitivity of a GaAs/GaAs 1 /sub -//subx/P/subx//n + -GaAs structure. The effect of γ radiation is less pronounced for both structures. The radiation-induced changes are discussed in terms of free-carrier absorption, index of refraction, scattering centers, and absorption by complexes

The apparent effect of sample surface damage on the dielectric parameters of GaAs

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)], E-mail: Japie.Engelbrecht@nmmu.ac.za; Hashe, N.G. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Hillie, K.T. [CSIR-NML Laboratory, P.O. Box 395, Pretoria 0001 (South Africa); Claassens, C.H. [Physics Department, University of the Free State, Bloemfontein 9300 (South Africa)

2007-12-15

The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted.

The apparent effect of sample surface damage on the dielectric parameters of GaAs

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Hashe, N.G.; Hillie, K.T.; Claassens, C.H.

2007-01-01

The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted

Crystal structure of LT GaAs layers before and after annealing

International Nuclear Information System (INIS)

Litiental-Weber, Z.

1992-01-01

In this paper the structural quality of GaAs layers grown at low temperatures by solid-source and gas-source MBE at different growth conditions is described. Dependence on the growth temperature and concentration of As [expressed at As/Ga beam equivalent pressure (BEP)] used for the growth is discussed. A higher growth temperature is required top obtain the same monocrystalling layer thickness with increased BEP. The annealing of these layers is associated with the formation of As precipitates. Semicoherent precipitates with lowest formation energies are formed in the monocrystalline parts of the layers grown with the lowest BEP. Precipitates with higher formation energies are formed when higher BEP is applied; they are also formed in the vicinity of structural defects. Formation of As precipitates releases strain in the layers. Arsenic precipitates are not formed in annealed ternary (InAlAs) layers despite their semi-insulating properties. The role of As precipitates in semi-insulating properties and the short lifetime of minority carriers in these layers is discussed

DOE Task Force meeting on Electrical Breakdown of Insulating Ceramics in a High Radiation Field

International Nuclear Information System (INIS)

Green, P.H.

1991-08-01

This volume contains the abstracts and presentation material from the Research Assistance Task Force Meeting ''Electrical Breakdown of Insulating Ceramics in a High-Radiation Field.'' The meeting was jointly sponsored by the Office of Basic Energy Sciences and the Office of Fusion Energy of the US Department of Energy in Vail, Colorado, May 28--June 1, 1991. The 26 participants represented expertise in fusion, radiation damage, electrical breakdown, ceramics, and semiconductor and electronic structures. These participants came from universities, industries, national laboratories, and government. The attendees represented eight nations. The Task Force meeting was organized in response to the recent discovery that a combination of temperature, electric field, and radiation for an extended period of time has an unexplained adverse effect in ceramics, termed radiation-enhanced electrical degradation (REED). REED occurs after an incubation period and continues to accelerate with irradiation until the ceramics can no longer be regarded as insulators. It appears that REED is irreversible and the ceramic insulators cannot be readily annealed or otherwise repaired for future services. This effect poses a serious threat for fusion reactors, which require electrical insulators in diagnostic devices, in radio frequency and neutral beam systems, and in magnetic assemblies. The problem of selecting suitable electrical insulating materials in thus far more serious than previously anticipated

Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

Directory of Open Access Journals (Sweden)

Smajo Sulejmanovic

2014-11-01

Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

Growth and characterization of semi-insulating carbon-doped/undoped GaN multiple-layer buffer

International Nuclear Information System (INIS)

Kim, Dong-Seok; Won, Chul-Ho; Kang, Hee-Sung; Kim, Young-Jo; Kang, In Man; Lee, Jung-Hee; Kim, Yong Tae

2015-01-01

We have proposed a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layer. The buffer layer showed sufficiently good semi-insulating characteristics, attributed to the depletion effect between the carbon-doped GaN and the undoped GaN layers, even though the thickness of the carbon-doped GaN layer in the periodic structure was designed to be very thin to minimize the total carbon incorporation into the buffer layer. The AlGaN/AlN/GaN heterostructure grown on the proposed buffer exhibited much better electrical and structural properties than that grown on the conventional thick carbon-doped semi-insulating GaN buffer layer, confirmed by Hall measurement, x-ray diffraction, and secondary ion mass spectrometry. The fabricated device also showed excellent buffer breakdown characteristics. (paper)

Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

International Nuclear Information System (INIS)

Boardman, D.A.; Sellin, P.J.

2001-01-01

A new design of monolithic GaAs pixel detector is proposed for medical and synchrotron applications. In this device a semi-insulating GaAs wafer will be used as both the detector element and the substrate for the integrated charge readout matrix. The charge readout matrix consists of High Electron Mobility Transistors (HEMTs), which are grown epitaxially onto the GaAs substrate. Experimental characterisation of HEMTs has been carried out and their suitability for the proposed imaging device is assessed. Temperature measurements on initial devices showed the threshold voltage to be stable from room temperature down to -15 degree sign C. HEMT designs with lower leakage current that operate in enhancement mode have been fabricated and modelled using the Silvaco simulation package. These optimised devices have been fabricated using a gate recess, and exhibit enhancement mode operation and significantly reduced gate leakage currents

Compilation of radiation damage test data. Pt. 3

International Nuclear Information System (INIS)

Beynel, P.; Maier, P.; Schoenbacher, H.

1982-01-01

This handbook gives the results of radiation damage tests on various engineering materials and components intended for installation in radiation areas of the CERN high-energy particle accelerators. It complements two previous volumes covering organic cable-insulating materials and thermoplastic and thermosetting resins. The irradiation have been carried out at various radiation sources and the results of the different tests are reported, sometimes illustrated by tables and graphs to show the variation of the measured property with absorbed radiation dose. For each entry, an appreciation of the radiation resistance is given, based on measurement data, indicating the range of damage (moderate to severe) for doses from 10 to 10 8 Gy. Also included are tables, selected from published reports, of general relative radiation effects for several groups of materials, to which there are systematic cross-references in the alphabetical part. This third and last volume contains cross-references to all the materials presented up to now, so that it can be used as a guide to the three volumes. (orig.)

Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm)

Science.gov (United States)

Nusir, A. I.; Makableh, Y. F.; Manasreh, O.

2015-08-01

Schottky barriers formed between metal (Au) and semiconductor (GaAs) can be used to detect photons with energy lower than the bandgap of the semiconductor. In this study, photodetectors based on Schottky barriers were fabricated and characterized for the detection of light at wavelength of 1280 nm. The device structure consists of three gold fingers with 1.75 mm long and separated by 0.95 mm, creating an E shape while the middle finger is disconnected from the outer frame. When the device is biased, electric field is stretched between the middle finger and the two outermost electrodes. The device was characterized by measuring the current-voltage (I-V) curve at room temperature. This showed low dark current on the order of 10-10 A, while the photocurrent was higher than the dark current by four orders of magnitude. The detectivity of the device at room temperature was extracted from the I-V curve and estimated to be on the order of 5.3x1010 cm.Hz0.5/W at 5 V. The step response of the device was measured from time-resolved photocurrent curve at 5 V bias with multiple on/off cycles. From which the average recovery time was estimated to be 0.63 second when the photocurrent decreases by four orders of magnitude, and the average rise time was measured to be 0.897 second. Furthermore, the spectral response spectrum of the device exhibits a strong peak close to the optical communication wavelength (~1.3 μm), which is attributed to the internal photoemission of electrons above the Schottky barrier formed between Au and GaAs.

The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

2011-01-01

In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

Radiation damage testing at the SSC [Superconducting Super Collider

International Nuclear Information System (INIS)

Chinowsky, W.; Thun, R.

1990-06-01

A Task Force on Radiation Damage Testing met at the SSC Laboratory on March 5--6, 1990. This Task Force was asked to assess the availability of appropriate facilities for radiation damage tests of SSC detector materials and components. The Task Force was also instructed to review the techniques and standards for conducting such tests. Semiconductors were considered separately from other detector materials. Radiation damage test of electronic devices generally require exposures to both ionizing radiation and neutrons, whereas non-electric components such as plastic scintillating materials, adhesives, cable insulation, and other organic polymers are adequately tested with ionizing radiation only. Test standards are discussed with respect to irradiation techniques, environmental factors, dosimetry, and mechanisms whereby various materials are damaged. It is emphasized that radiation sources should be chosen to duplicate as much as possible the expected SSC environment and that the effects from ionizing particles and from neutrons be investigated separately. Radiation damage tests at reactors must be designed with particular care complex spectra of neutrons and gamma rays are produced at such facilities. It is also essential to investigate dose-rate effects since they are known to be important in many cases. The required irradiations may last several months and are most easily carried out with dedicated radioactive sources. Environmental factors such as the presence of oxygen when testing plastic scintillators, or temperature when measuring semiconductor annealing effects, must also be taken into account. The importance of reliable dosimetry is stressed and suitable references cited. Finally, it is noted that an understanding of the mechanisms for radiation damage in semiconductor and other materials is important in planning irradiations and evaluating results

Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

Directory of Open Access Journals (Sweden)

Pranab Biswas

2014-05-01

Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

Energy Technology Data Exchange (ETDEWEB)

Dreyhaupt, Andre

2008-07-01

Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

Science.gov (United States)

Louarn, K.; Claveau, Y.; Hapiuk, D.; Fontaine, C.; Arnoult, A.; Taliercio, T.; Licitra, C.; Piquemal, F.; Bounouh, A.; Cavassilas, N.; Almuneau, G.

2017-09-01

The aim of this study is to investigate the impact of multiband corrections on the current density in GaAs tunnel junctions (TJs) calculated with a refined yet simple semi-classical interband tunneling model (SCITM). The non-parabolicity of the considered bands and the spin-orbit effects are considered by using a recently revisited SCITM available in the literature. The model is confronted to experimental results from a series of molecular beam epitaxy grown GaAs TJs and to numerical results obtained with a full quantum model based on the non-equilibrium Green’s function formalism and a 6-band k.p Hamiltonian. We emphasize the importance of considering the non-parabolicity of the conduction band by two different measurements of the energy-dependent electron effective mass in N-doped GaAs. We also propose an innovative method to compute the non-uniform electric field in the TJ for the SCITM simulations, which is of prime importance for a successful operation of the model. We demonstrate that, when considering the multiband corrections and this new computation of the non-uniform electric field, the SCITM succeeds in predicting the electrical characteristics of GaAs TJs, and are also in agreement with the quantum model. Besides the fundamental study of the tunneling phenomenon in TJs, the main benefit of this SCITM is that it can be easily embedded into drift-diffusion software, which are the most widely-used simulation tools for electronic and opto-electronic devices such as multi-junction solar cells, tunnel field-effect transistors, or vertical-cavity surface-emitting lasers.

Low-energy particle treatment of GaAs surface

International Nuclear Information System (INIS)

Pincik, E.; Ivanco, J.; Brunner, R.; Jergel, M.; Falcony, C.; Ortega, L.; Kucera, J. M.

2002-01-01

The paper presents results of a complex study of surface properties of high-doped (2x10 18 cm -3 ) and semi-insulating GaAs after an interaction with the particles coming from low-energy ion sources such as RF plasma and ion beams. The virgin samples were mechano-chemically polished liquid-encapsulated Czochralski-grown GaAs (100) oriented wafers. The crystals were mounted on the grounded electrode (holder). The mixture Ar+H 2 as well as O 2 and CF 4 were used as working gases: In addition, a combination of two different in-situ exposures was applied, such as e.g. hydrogen and oxygen. Structural, electrical and optical properties of the exposed surfaces were investigated using X-ray diffraction at grazing incidence, quasi-static and high-frequency C-V curve measurements, deep-level transient spectroscopy, photo-reflectance, and photoluminescence. Plasma and ion beam exposures were performed in a commercial RF capacitively coupled plasma equipment SECON XPL-200P and a commercial LPAI device, respectively. The evolution of surface properties as a function of the pressure of working gas and the duration of exposure was observed. (Authors)

Compilation of radiation damage test data part III: materials used around high-energy accelerators

CERN Document Server

Beynel, P; Schönbacher, H; CERN. Geneva

1982-01-01

For pt.II see CERN report 79-08 (1979). This handbook gives the results of radiation damage tests on various engineering materials and components intended for installation in radiation areas of the CERN high-energy particle accelerators. It complements two previous volumes covering organic cable-insulating materials and thermoplastic and thermosetting resins.

Electric properties of semi-insulating crystals CdTe:Cl

International Nuclear Information System (INIS)

Arkadyeva, E.N.; Matveev, O.A.

1977-01-01

Hall effect and conductivity measurement were carried out on chlorine doped semi-insulating CdTe crystals, of p and n electric type. In p type crystals the depth of the dominating level was determined (+0.7eV) as well as the concentration of associated centres (10 13 -10 14 cm -3 ). The mobility values are limited by a process of diffusion on heterogeneities

Dimensional crossover and cold-atom realization of gapless and semi-metallic Mott insulating phases

Science.gov (United States)

Orth, Peter P.; Scheurer, Mathias; Rachel, Stephan

2014-03-01

We propose a realistic cold-atom setup which allows for a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator phase by simply tuning the hopping between the layers. We further employ cluster slave-rotor mean-field theory to study the effect of additional Hubbard onsite interactions that give rise to various spin liquid-like phases such as gapless and semi-metallic Mott insulating states.

Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors

International Nuclear Information System (INIS)

Bisogni, M.G.; Cola, A.; Fantacci, M.E.

2001-01-01

In pixel detectors, the electrode geometry affects the signal shape and therefore the spectroscopic performance of the device. This effect is enhanced in semiconductors where carrier trapping is relevant. In particular, semi insulating (SI) GaAs crystals present an incomplete charge collection due to a high concentration of deep traps in the bulk. In the last few years, SI GaAs pixel detectors have been developed as soft X-ray detectors for medical imaging applications. In this paper, we present a numerical method to evaluate the local charge collection properties of pixel detectors. A bi-dimensional description has been used to represent the detector geometry. According to recent models, the active region of a reverse biased SI GaAs detector is almost neutral. Therefore, the electrostatic potential inside a full active detector has been evaluated using the Laplace equation. A finite difference method with a fixed step orthogonal mesh has been adopted. The photon interaction point has been generated with a Monte Carlo method according to the attenuation length of a monochromatic X-ray beam in GaAs. The number of photogenerated carriers for each interaction has been extracted using a gaussian distribution. The induced signal on the collecting electrode has been calculated according to the Ramo's theorem and the trapping effect has been modeled introducing electron and hole lifetimes. The noise of the charge preamplifier have been also taken into account. A comparison between simulated and experimental X-ray spectra from a 241 Am source acquired with different GaAs pixel detectors has been carried out

Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

International Nuclear Information System (INIS)

Shcherbachev, Kirill; Bailey, Melanie J.

2011-01-01

An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Electrical insulation for large multiaxis superconducting magnets

International Nuclear Information System (INIS)

Harvey, A.R.; Rinde, J.A.

1975-01-01

The selection of interturn and interlayer insulation for superconducting magnets is discussed. The magnet problems of the Baseball II device are described. Manufacture of the insulation and radiation damage are mentioned. A planned experimental program is outlined

The inaccuracy of heat transfer characteristics of insulated and non-insulated circular duct while neglecting the influence of heat radiation

International Nuclear Information System (INIS)

Hsien, T.-L.; Wong, K.-L.; Yu, S.-J.

2009-01-01

The non-insulated and insulated ducts are commonly applied in the industries and various buildings, because the heat radiation equation contains the 4th order exponential of temperature which is very complicate in calculations. Most heat transfer experts recognized from their own experiences that the heat radiation effect can be ignored due to the small temperature difference between insulated and non-insulated surface and surroundings. This paper studies in detail to check the inaccuracies of heat transfer characteristics non-insulated and insulated duct by comparing the results between considering and neglecting heat radiation effect. It is found that neglecting the heat radiation effect is likely to produce large errors of non-insulated and thin-insulated ducts in situations of ambient air with low external convection heat coefficients and larger surface emissivity, especially while the ambient air temperature is different from that of surroundings and greater internal fluid convection coefficients. It is also found in this paper that using greater duct surface emissivity can greatly improve the heat exchanger effect and using smaller insulated surface emissivity can obtain better insulation.

Femtosecond laser damage threshold and nonlinear characterization in bulk transparent SiC materials

International Nuclear Information System (INIS)

DesAutels, G. Logan; Finet, Marc; Ristich, Scott; Whitaker, Matt; Brewer, Chris; Juhl, Shane; Walker, Mark; Powers, Peter

2008-01-01

Semi-insulating and conducting SiC crystalline transparent substrates were studied after being processed by femtosecond (fs) laser radiation (780 nm at 160 fs). Z-scan and damage threshold experiments were performed on both SiC bulk materials to determine each sample's nonlinear and threshold parameters. 'Damage' in this text refers to an index of refraction modification as observed visually under an optical microscope. In addition, a study was performed to understand the damage threshold as a function of numerical aperture. Presented here for the first time, to the best of our knowledge, are the damage threshold, nonlinear index of refraction, and nonlinear absorption measured values

Radiation damage in nonmetallic solids under dense electronic excitation

International Nuclear Information System (INIS)

Itoh, Noriaki; Tanimura, Katsumi; Nakai, Yasuo

1992-01-01

Basic processes of radiation damage of insulators by dense electronic excitation are reviewed. First it is pointed out that electronic excitation of nonmetallic solids produces the self-trapped excitons and defect-related metastable states having relatively long lifetimes, and that the excitation of these metastable states, produces stable defects. The effects of irradiation with heavy ions, including track registration, are surveyed on the basis of the microscopic studies. It is pointed out also that the excitation of the metastable states plays a role in laser-induced damage at relatively low fluences, while the laser damage has been reported to be governed by heating of free electrons produced by multiphoton excitation. Difference in the contributions of the excitation of metastable defects to laser-induced damage of surfaces, or laser ablation, and laser-induced bulk damage is stressed. (orig.)

Damage characterization for particles filled semi-crystalline polymer

Directory of Open Access Journals (Sweden)

Lauro Franck

2015-01-01

Full Text Available Damage evolution and characterization in semi-crystalline polymer filled with particles under various loadings is still a challenge. A specific damage characterization method using Digital Image Correlation is proposed for a wide range of strain rates considering tensile tests with hydraulic jacks as well as Hopkinson's bars. This damage measurement is obtained by using and adapting the SEE method [1] which was developed to characterize the behaviour laws at constant strain rates of polymeric materials in dynamic. To validate the characterization process, various damage measurement techniques are used under quasi-static conditions before to apply the procedure in dynamic. So, the well-known damage characterization by loss of stiffness technique under quasi-static loading is applied to a polypropylene. In addition, an in-situ tensile test, carried out in a microtomograph, is used to observe the cavitation phenomenon in real time. A good correlation is obtained between all these techniques and consequently the proposed technique is supposed suitable for measuring the ductile damage observed in semi-crystalline polymers under dynamic loading. By applying it to the semi-crystalline polymer at moderate and high speed loadings, the damage evolution is measured and it is observed that the damage evolution is not strain rate dependent but the failure strain on the contrary is strain rate dependent.

Effects produced in GaAs by MeV ion bombardment

International Nuclear Information System (INIS)

Wie, C.R.

1985-01-01

The first part of this thesis presents work performed on the ionizing energy beam induced adhesion enhancement of thin (approx.500 A) Au films on GaAs substrates. The ionizing beam, employed in the present thesis, is the MeV ions (i.e., 16 O, 19 F, and 35 Cl), with energies between 1 and 20 MeV. Using the Scratch test for adhesion measurement, and ESCA for chemical analysis of the film substrate interface, the native oxide layer at the interface is shown to play an important role in the adhesion enhancement by the ionizing radiation. A model is discussed that explains the experimental data on the dependence of adhesion enhancement on the energy which was deposited into electronic processes at the interface. The second part of the thesis presents research results on the radiation damage in GaAs crystals produced by MeV ions. Lattice parameter dilatation in the surface layers of the GaAs crystals becomes saturated after a high dose bombardment at room temperature. The strain produced by nuclear collisions is shown to relax partially due to electronic excitation (with a functional dependence on the nuclear and electronic stopping power of bombarding ions. Data on the GaAs and GaP crystals suggest that low temperature recovery stage defects produce major crystal distortion

Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation

Science.gov (United States)

Nie, X. C.; Song, Hai-Ying; Zhang, Xiu; Gu, Peng; Liu, Shi-Bing; Li, Fan; Meng, Jian-Qiao; Duan, Yu-Xia; Liu, H. Y.

2018-03-01

We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved reflectivity. In photoexcited non-equilibrium states, we found a sign reverse in reflectivity change ΔR/R, from positive around room temperature to negative at cryogenic temperatures. The former corresponds to a free carrier metallic state, while the latter is attributed to an exciton insulating state, in which the transient electronic properties is mostly dominated by excitons, resulting in a transient metal–insulator transition (MIT). Two transition temperatures (T 1 and T 2) are well identified by analyzing the intensity change of the transient reflectivity. We found that photoexcited MIT starts emerging at T 1 as high as ∼ 230 K, in terms of a dip feature at 0.4 ps, and becomes stabilized below T 2 that is up to ∼ 180 K, associated with a negative constant after 40 ps. Our results address a phase diagram that provides a framework for the inducing of MIT through temperature and photoexcitation, and may shed light on the understanding of light-semiconductor interaction and exciton physics.

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

CERN Document Server

Schwarz, C; Göppert, R; Heijne, Erik H M; Ludwig, J; Meddeler, G; Mikulec, B; Pernigotti, E; Rogalla, M; Runge, K; Smith, K M; Snoeys, W; Söldner-Rembold, S; Watt, J

1999-01-01

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (...

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

International Nuclear Information System (INIS)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L.

1991-01-01

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 μrad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors

Application of GaAs and CdTe photoconductor detectors to x-ray flash radiography

Energy Technology Data Exchange (ETDEWEB)

Mathy, F.; Cuzin, M.; Gagelin, J.J.; Mermet, R.; Piaget, B.; Rustique, J.; Verger, L. [CEA Centre d`Etudes de Grenoble, 38 (FR). Direction des Technologies Avancees; Hauducoeur, A.; Nicolas, P.; Le Dain, L.; Hyvernage, M. [CEA Centre d`Etudes de Vaujours, 77 - Courtry (FR)

1991-12-31

Semi-insulating GaAs and CdTe:Cl photoconductor probes were qualified on high energy X ray single shot flash generators. The estimated minimum detected dose per flash corresponding to a 230 mrad direct beam attenuated by 200 mm lead was 20 {mu}rad. The dynamic range was about 4 decades in amplitude or charges, with a good linearity. Such detectors, by locating the origin of the parasitic scattered beam, could be used to eliminate this parasitic beam in X ray flash radiography in detonics experiments. Imaging possibilities are mentioned, as well as X ray generator monitoring with such detectors or with neutron preirradiated photoconductors.

Radiation annealing of gallium arsenide implanted with sulphur

CERN Document Server

Ardyshev, V M

2002-01-01

Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

Development of radiation resistant PEEK insulation cable

International Nuclear Information System (INIS)

Mio, Keigo; Ogiwara, Norio; Hikichi, Yusuke; Furukori, Hisayoshi; Arai, Hideyuki; Nishizawa, Daiji; Nishidono, Toshiro

2009-04-01

Material characterization and development has been carried out for cable insulation suitable for use in the J-PARC 3-GeV RCS radiation environment. In spite of its high cost, PEEK (polyether-ether-ketone) has emerged as the leading candidate satisfying requirements of being non-halogen based, highly incombustible and with radiation resistant at least 10 MGy, along with the usual mechanical characteristics such as good elongation at break, which are needed in a cable insulation. Gamma-ray irradiation tests have been done in order to study radiation resistance of PEEK cable. Further, mechanical, electrical and fire retardant characteristics of a complete cable such as would be used at the J-PARC RCS were investigated. As a result, PEEK cables were shown to be not degraded by radiation up to at least 10 MGy, and thus could be expected to operate stably under the 3-GeV RCS radiation environment. (author)

Compilation of radiation damage test data. I

International Nuclear Information System (INIS)

Schoenbacher, H.; Stolarz-Izycka, A.

1979-01-01

This report summarizes radiation damage test data on commercially available organic cable insulation and jacket materials: ethylene-propylene rubber, Hypalon, neoprene rubber, polyethylene, polyurethane, polyvinylchloride, silicone rubber, etc. The materials have been irradiated in a nuclear reactor to integrated absorbed doses from 5 X 10 5 to 5 X 10 6 Gy. Mechanical properties, e.g. tensile strength, elongation at break, and hardness, have been tested on irradiated and non-irradiated samples. The results are presented in the form of tables and graphs, to show the effect of the absorbed dose on the measured properties. (Auth.)

Radiation Damage in Reactor Materials. Part of the Proceedings of the Symposium on Radiation Damage in Solids and Reactor Materials

Energy Technology Data Exchange (ETDEWEB)

NONE

1963-08-15

Radiation damage has presented a new design parameter for the selection of materials to be used in fuel and cladding elements, moderators, structural components and pressure vessels in nuclear reactors. The severe and novel requirements for certain optimum combinations of physical and nuclear properties have emphasized the need for a better understanding of the basic mechanisms of radiation damage. This knowledge is not only essential for progress in the field of nuclear energy, but has direct applications to space technology and semi-conductor research as well. The IAEA, as part of its programme of promoting nuclear technology, therefore convened the Symposium on Radiation Damage in Solids and Reactor Materials, 7-11 May 1962. At the invitation of, and with generous material assistance from, the Government of Italy, the Symposium was held at Venice. The Symposium was primarily concerned with the investigation of the fundamental processes of radiation that underlie the behaviour of metals, alloys and ceramics that are actually useful or potentially useful reactor materials. Two sessions were devoted to studies of irradiation effects on simple metals, as these effects are easiest to interpret. Other topics included general theory, alloys, fissionable and moderator materials and special experimental techniques for radiation damage studies. The properties influenced by irradiation which were of main concern were those of primary importance to the behaviour of solids as reactor materials (e. g. dimensional stability, phase transformation, radiation hardening, fracture, fission-gas escape from uranium and its compounds). Other properties, such as optical, electrical and magnetic properties, and effects on semiconductors, ionic and other non-metallic crystals are also of interest in that these studies can increase our knowledge of the mechanism of radiation damage in solids and provide a tool for investigation into the physics of the solid state by offering a means of

Radiation Damage in Reactor Materials. Part of the Proceedings of the Symposium on Radiation Damage in Solids and Reactor Materials

International Nuclear Information System (INIS)

1963-01-01

Radiation damage has presented a new design parameter for the selection of materials to be used in fuel and cladding elements, moderators, structural components and pressure vessels in nuclear reactors. The severe and novel requirements for certain optimum combinations of physical and nuclear properties have emphasized the need for a better understanding of the basic mechanisms of radiation damage. This knowledge is not only essential for progress in the field of nuclear energy, but has direct applications to space technology and semi-conductor research as well. The IAEA, as part of its programme of promoting nuclear technology, therefore convened the Symposium on Radiation Damage in Solids and Reactor Materials, 7-11 May 1962. At the invitation of, and with generous material assistance from, the Government of Italy, the Symposium was held at Venice. The Symposium was primarily concerned with the investigation of the fundamental processes of radiation that underlie the behaviour of metals, alloys and ceramics that are actually useful or potentially useful reactor materials. Two sessions were devoted to studies of irradiation effects on simple metals, as these effects are easiest to interpret. Other topics included general theory, alloys, fissionable and moderator materials and special experimental techniques for radiation damage studies. The properties influenced by irradiation which were of main concern were those of primary importance to the behaviour of solids as reactor materials (e. g. dimensional stability, phase transformation, radiation hardening, fracture, fission-gas escape from uranium and its compounds). Other properties, such as optical, electrical and magnetic properties, and effects on semiconductors, ionic and other non-metallic crystals are also of interest in that these studies can increase our knowledge of the mechanism of radiation damage in solids and provide a tool for investigation into the physics of the solid state by offering a means of

Development of flame retardant, radiation resistant insulating materials

Energy Technology Data Exchange (ETDEWEB)

Hagiwara, M.

1984-01-01

On the cables used for nuclear power stations, in particular those ranked as IE class, flame retardation test, simulated LOCA environment test, radiation resistance test and so on are imposed. The results of the evaluation of performance by these tests largely depend on the insulating materials mainly made of polymers. Ethylene propylene copolymer rubber has been widely used as cable insulator because of its electrical characteristics, workability, economy and relatively good radiation resistance, but it is combustible, therefore, in the practical use, it is necessary to make it fire resistant. The author et al. have advanced the research on the molecular design of new fire retarding materials, and successfully developed acenaphthylene bromide condensate, which is not only fire resistant but also effective for improving radiation resistance. The condition of flame retardant, radiation resistant auxiliary agents is explained, and there are additive type and reaction type in fire retarding materials. The synthesis of acenaphthylene bromide condensate and its effect of giving flame retardant and radiation resistant properties are reported. The characteristics of the cables insulated with the flame retardant ethylene propylene rubber containing acenaphthylene bromide condensate were tested, and the results are shown. (Kako, I.).

Radiation-damage studies, irradiations and high-dose dosimetry for LHC detectors

CERN Document Server

Coninckx, F; León-Florián, E; Leutz, H; Schönbacher, Helmut; Sonderegger, P; Tavlet, Marc; Sopko, B; Henschel, H; Schmidt, H U; Boden, A; Bräunig, D; Wulf, F; Cramariuc, R; Ilie, D; Fattibene, P; Onori, S; Miljanic, S; Paic, G; Razen, B; Razem, D; Rendic, D; CERN. Geneva. Detector Research and Development Committee

1991-01-01

The proposal is divided into a main project and special projects. The main project consists of a service similar to the one given in the past to accelerator construction projects at CERN (ISR,SPS,LEP) on high-dose dosimetry, material irradiations, irradiations tests, standardization of test procedures and data compilations. Large experience in this field and numerous radiation damage test data of insulating and structural materials are available. The special projects cover three topics which are of specific interest for LHC detector physicists and engineers at CERN and in other high energy physics institutes, namely: Radiation effects in scintillators; Selection of radiation hard optical fibres for data transmission; and Selection and testing of radiation hard electronic components.

Compilation of radiation damage test data

International Nuclear Information System (INIS)

Schoenbacher, H.; Tavlet, M.

1989-01-01

This report summarizes radiation damage test data on commercially available organic cable insulation and jacket materials: Ethylene-propylene rubbers, polyethylenes, polyurethanes, silicone rubbers, and copolymers based on polyethylene. The materials have been irradiated either in a nuclear reactor, or with a cobalt-60 source, or in the CERN accelerators, at different dose rates. The absorbed doses were between 10 3 and 5x10 6 Gy. Mechanical properties, e.g. tensile strength, elongation at break, and hardness, have been tested on irradiated and non-irradiated samples, according to the recommendations of the International Electrotechnical Commission. The results are presented in the form of tables and graphs to show the effect of the absorbed dose on the measured properties. (orig.)

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

Radial space-charge-limited electron flow in semi-insulating GaN:Fe

Czech Academy of Sciences Publication Activity Database

Mareš, Jiří J.; Hubík, Pavel; Krištofik, Jozef; Prušáková, Lucie; Uxa, Štěpán; Paskova, T.; Evans, K.

2011-01-01

Roč. 110, č. 1 (2011), 013723/1-013723/6 ISSN 0021-8979 R&D Projects: GA ČR GAP204/10/0212 Institutional research plan: CEZ:AV0Z10100521 Keywords : gallium nitride * semi-insulator * space-charge-limited current Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.168, year: 2011

Reduction in thermal conductivity of ceramics due to radiation damage

International Nuclear Information System (INIS)

Klemens, P.G.; Hurley, G.F.; Clinard, F.W. Jr.

1976-01-01

Ceramics are required for a number of applications in fusion reactors. In several of these applications, the thermal conductivity is an important design parameter as it affects the level of temperature and thermal stress in service. Ceramic insulators are known to suffer substantial reduction in thermal conductivity due to neutron irradiation damage. The present study estimates the reduction in thermal conductivity at high temperature due to radiation induced defects. Point, extended, and extended partly transparent defects are considered

A contribution for the detection of deep defects in semi-insulating GaAs by means of PICTS; Ein Beitrag zum Nachweis tiefer Stoerstellen in halbisolierendem GaAs mittels PICTS

Energy Technology Data Exchange (ETDEWEB)

Zychowitz, G.

2006-02-03

The PICTS procedure is one of the most frequently applied methods for the characterization of semi-insulating semiconductors. The methodical progresses in the determination of defect parameters by this proceudure are presented in this thesis. as practicable method for the detection of a temperature-dependent change of the occupation ratio of a trap the normation of the PICTS spectra on the emission rate of the electrons is introduced. It is shown that peaks, in which this normation fails, must not applied for the determination of the defect parameters. The studies prove that for the complete charge-alteration of the defects a suitable excitation intensity must be applied. By PICTS measurements on copper-doped samples a systematic dependence of the peak heights of copper-correlated peaks on the copper content of the samples is detected. By the studies it is proved that copper can be detected by means of PICTS up to a minimal AES copper concentration of [Cu{sub min}]approx5.10{sup 14} cm{sup -3}.

Linearity of photoconductive GaAs detectors to pulsed electrons

International Nuclear Information System (INIS)

Ziegler, L.H.

1995-01-01

The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 psec fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

International Nuclear Information System (INIS)

Auden, E.C.; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

2017-01-01

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al_0_._3Ga_0_._7As/GaAs/Al_0_._2_5Ga_0_._7_5As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Modeling charge collection efficiency degradation in partially depleted GaAs photodiodes using the 1- and 2-carrier Hecht equations

Energy Technology Data Exchange (ETDEWEB)

Auden, E.C., E-mail: eauden@sandia.gov; Vizkelethy, G.; Serkland, D.K.; Bossert, D.J.; Doyle, B.L.

2017-05-15

The Hecht equation can be used to model the nonlinear degradation of charge collection efficiency (CCE) in response to radiation-induced displacement damage in both fully and partially depleted GaAs photodiodes. CCE degradation is measured for laser-generated photocurrent as a function of fluence and bias in Al{sub 0.3}Ga{sub 0.7}As/GaAs/Al{sub 0.25}Ga{sub 0.75}As p-i-n photodiodes which have been irradiated with 12 MeV C and 7.5 MeV Si ions. CCE is observed to degrade more rapidly with fluence in partially depleted photodiodes than in fully depleted photodiodes. When the intrinsic GaAs layer is fully depleted, the 2-carrier Hecht equation describes CCE degradation as photogenerated electrons and holes recombine at defect sites created by radiation damage in the depletion region. If the GaAs layer is partially depleted, CCE degradation is more appropriately modeled as the sum of the 2-carrier Hecht equation applied to electrons and holes generated within the depletion region and the 1-carrier Hecht equation applied to minority carriers that diffuse from the field-free (non-depleted) region into the depletion region. Enhanced CCE degradation is attributed to holes that recombine within the field-free region of the partially depleted intrinsic GaAs layer before they can diffuse into the depletion region.

Radiation damage

CERN Document Server

Heijne, Erik H M; CERN. Geneva

1998-01-01

a) Radiation damage in organic materials. This series of lectures will give an overview of radiation effects on materials and components frequently used in accelerator engineering and experiments. Basic degradation phenomena will be presented for organic materials with comprehensive damage threshold doses for commonly used rubbers, thermoplastics, thermosets and composite materials. Some indications will be given for glass, scintillators and optical fibres. b) Radiation effects in semiconductor materials and devices. The major part of the time will be devoted to treat radiation effects in semiconductor sensors and the associated electronics, in particular displacement damage, interface and single event phenomena. Evaluation methods and practical aspects will be shown. Strategies will be developed for the survival of the materials under the expected environmental conditions of the LHC machine and detectors. I will describe profound revolution in our understanding of black holes and their relation to quantum me...

Effects of γ-radiation on the properties of insulating oil

International Nuclear Information System (INIS)

Abdel Aziz, M.M.; Elshazly-Zaghloul, M.; Zaghloul, A.R.M.; Fikry, L.; Raieh, M.

1986-01-01

Electrical Equipment used in an irradiated environment suffer from ionization and other effects. Insulating oil, e.g. of transformers, in a nuclear power station is subjected to γ-radiation. In this communication we provide a detailed experimental study of insulating oil subjected to γ-radiation. Unused oil samples of the type used in Egypt were subjected to γ-radiation for different time periods. The electrical properties of these samples are measured; dielectric constant and breakdown strength

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types

CERN Document Server

Pereira, LMC; Decoster, S; Correia, JG; Amorim, LM; da Silva, MR; Araújo, JP; Vantomme, A

2012-01-01

We report on the lattice location of Mn impurities (< 0.05%) in undoped (semi-insulating) and heavily $n$-type doped GaAs, by means of $\\beta^{-}$-emission channeling from the decay of $^{56}$Mn produced at ISOLDE/CERN. In addition to the majority substituting for Ga, we locate up to 30% of the Mn impurites on tetrahedral interstitial sites with As nearest neighbors. In line with the recently reported high thermal stability of interstitial Mn in heavily $p$-type doped GaAs [L. M. C. Pereira et al., Appl. Phys. Lett. 98, 201905 (2011)], the interstitial fraction is found to be stable up to 400$^{\\circ}$C, with an activation energy for diffusion of 1.7–2.3 eV. By varying the concentration of potentially trapping defects, without a measurable effect on the migration energy of the interstitial impurities, we conclude that the observed high thermal stability is characteristic of isolated interstitial Mn. Being difficult to reconcile with the general belief that interstitial Mn is the donor defect that out-dif...

Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

International Nuclear Information System (INIS)

Xi Xiao-Wen; Chai Chang-Chun; Liu Yang; Yang Yin-Tang; Fan Qing-Yang; Shi Chun-Lei

2016-01-01

An electromagnetic pulse (EMP)-induced damage model based on the internal damage mechanism of the GaAs pseudomorphic high electron mobility transistor (PHEMT) is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level. (paper)

VO2-based radiative thermal transistor with a semi-transparent base

Science.gov (United States)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

2018-05-01

We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

3-D GaAs radiation detectors

International Nuclear Information System (INIS)

Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

2002-01-01

A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

Enhancement of radiation tolerance in GaAs/AlGaAs core–shell and InP nanowires

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 × 1011 to 5 × 1013 p cm‑2. It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

Science.gov (United States)

Li, Fajun; Xie, Xiaolong; Gao, Qian; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Tan, Hark Hoe; Jagadish, Chennupati

2018-06-01

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H + irradiation with fluences ranging from 1 × 10 11 to 5 × 10 13 p cm -2 . It is found that the degradation of lifetime is size-dependent, and typically the minority carrier lifetime damage coefficient is closely correlated with the material and NW diameter. Compared to GaAs and InP bulk material counterparts, the lifetime damage coefficient of NWs decreases by a factor of about one order of magnitude. After irradiation, GaAs NWs with a smaller diameter show a much lower lifetime damage coefficient while InP NWs show an increase in carrier radiative lifetime. The increased size-dependent radiation hardness is mainly attributed to the defect sink effect and/or the improvement of a room temperature dynamic annealing mechanism of the NWs. The InP NWs also showed higher radiation tolerance than GaAs NWs.

Compilation of radiation damage test data. II

International Nuclear Information System (INIS)

Schoenbacher, H.; Stolarz-Izycka, A.

1979-01-01

This report summarizes radiation damage test data on thermosetting and thermoplastic resins, with the main emphasis on epoxy resins used for magnet coil insulations. Also, other materials such as polyesters, phenolics, polyurethanes, silicones, etc., are represented. The materials have been irradiated in a nuclear reactor to integrated absorbed doses between 5x10 6 Gy and 1x10 8 Gy. The mechanical properties, e.g. the flexural strength, deflection at break, and tangent modulus of elasticity, have been measured on irradiated and non-irradiated samples. The results are given as variation of these parameters versus absorbed dose and are presented in the form of tables and graphs. The tested materials are catalogued in alphabetical order. (Auth.)

Effect of radiation resistance additives for insulation materials

International Nuclear Information System (INIS)

Yamamoto, Yasuaki; Yagyu, Hideki; Seguchi, Tadao.

1988-01-01

For the electric wires and cables used in radiation environment such as nuclear power stations and fuel reprocessing facilities, the properties of excellent radiation resistance are required. For these insulators and sheath materials, ethylene propylene rubber, polyethylene and other polymers have been used, but it cannot be said that they always have good radiation resistance. However, it has been well known that radiation resistance can be improved with small amount of additives, and heat resistance and burning retarding property as well as radiation resistance are given to the insulators of wires and cables for nuclear facilities by mixing various additives. In this research, the measuring method for quantitatively determining the effect of Anti-rad (radiation resistant additive) was examined. Through the measurement of gel fraction, radical formation and decomposed gas generation, the effect of Anti-rad protecting polymers from radiation deterioration was examined from the viewpoint of chemical reaction. The experimental method and the results are reported. The radiation energy for cutting C-H coupling is polymers is dispersed by Anti-rad, and the probability of cutting is lowered. Anti-rad catches and extinguishes radicals that start oxidation reaction. (K.I.)

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP

Science.gov (United States)

Wheeler, Dustin D.; Willmering, Matthew M.; Sesti, Erika L.; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J.; Hayes, Sophia E.

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈Sz 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, Eg . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k = 0 bandedge, we define a new parameter, Sopt (Eph) . Incorporating this revised element into the expression for 〈Sz 〉 , we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects.

Modelling of OPNMR phenomena using photon energy-dependent 〈Sz〉 in GaAs and InP.

Science.gov (United States)

Wheeler, Dustin D; Willmering, Matthew M; Sesti, Erika L; Pan, Xingyuan; Saha, Dipta; Stanton, Christopher J; Hayes, Sophia E

2016-12-01

We have modified the model for optically-pumped NMR (OPNMR) to incorporate a revised expression for the expectation value of the z-projection of the electron spin, 〈S z 〉 and apply this model to both bulk GaAs and a new material, InP. This expression includes the photon energy dependence of the electron polarization when optically pumping direct-gap semiconductors in excess of the bandgap energy, E g . Rather than using a fixed value arising from coefficients (the matrix elements) for the optical transitions at the k=0 bandedge, we define a new parameter, S opt (E ph ). Incorporating this revised element into the expression for 〈S z 〉, we have simulated the photon energy dependence of the OPNMR signals from bulk semi-insulating GaAs and semi-insulating InP. In earlier work, we matched calculations of electron spin polarization (alone) to features in a plot of OPNMR signal intensity versus photon energy for optical pumping (Ramaswamy et al., 2010). By incorporating an electron spin polarization which varies with pump wavelength into the penetration depth model of OPNMR signal, we are able to model features in both III-V semiconductors. The agreement between the OPNMR data and the corresponding model demonstrates that fluctuations in the OPNMR intensity have particular sensitivity to light hole-to-conduction band transitions in bulk systems. We provide detailed plots of the theoretical predictions for optical pumping transition probabilities with circularly-polarized light for both helicities of light, broken down into illustrative plots of optical magnetoabsorption and spin polarization, shown separately for heavy-hole and light-hole transitions. These plots serve as an effective roadmap of transitions, which are helpful to other researchers investigating optical pumping effects. Copyright © 2016 Elsevier Inc. All rights reserved.

Intrinsic radiation tolerance of ultra-thin GaAs solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirst, L. C.; Yakes, M. K.; Warner, J. H.; Schmieder, K. J.; Walters, R. J.; Jenkins, P. P. [U.S. Naval Research Laboratory, 4555 Overlook Ave. SW., Washington, D.C. 20375 (United States); Bennett, M. F. [Sotera Defense Solutions, Inc., Annapolis Junction, Maryland 20701-1067 (United States)

2016-07-18

Radiation tolerance is a critical performance criterion of photovoltaic devices for space power applications. In this paper we demonstrate the intrinsic radiation tolerance of an ultra-thin solar cell geometry. Device characteristics of GaAs solar cells with absorber layer thicknesses 80 nm and 800 nm were compared before and after 3 MeV proton irradiation. Both cells showed a similar degradation in V{sub oc} with increasing fluence; however, the 80 nm cell showed no degradation in I{sub sc} for fluences up to 10{sup 14 }p{sup +} cm{sup −2}. For the same exposure, the I{sub sc} of the 800 nm cell had severely degraded leaving a remaining factor of 0.26.

Effect that radiation exerts to insulation breakdown of heat resistant polymer materials

International Nuclear Information System (INIS)

Fujita, Shigetaka; Baba, Makoto; Noto, Fumitoshi; Ruike, Mitsuo.

1990-01-01

Artificial satellites are always exposed to cosmic rays which contain the radiations which do not reach the ground, therefore, the radiation resistance of the polymer insulators for cables and others used in such environment becomes a problem. Also the polymer insulator materials used for nuclear facilities require excellent radiation resistance. It is important to examine the effect that radiation exerts to electric insulation characteristics from the viewpoint of material development. In this paper, the insulation breakdown characteristics of heat resistant polymer films and the mini-cables made for trial of heat resistant polymer materials in the case without irradiation and in the case of gamma ray irradiation, and the results of the structural analysis are reported. The specimens tested, the experimental method and the results are described. The insulation breakdown strength of PFA and FEP films lowered from 0.15-0.2 MGy, but that of PEEK film did not change up to 5 MGy. It was found that fluorine group resins were apt to deteriorate by oxidation as dose increased. (K.I.)

Spatial distribution of the X- and γ- rays induced energy deposition on semi-insulating GaAs:Cr based pixel radiation detector

International Nuclear Information System (INIS)

Meneses Gonzalez, Annie; Leyva Fabelo, Antonio; Pinnera Hernandez, Ibrahin; Cruz Inclan, Carlos M.; Abreu Alfonso, Yamiel; Chelkov, Georgy; Zhemchugov, Alexey

2015-01-01

Radiation detectors based on Cr compensated GaAs are characterized by high resistivity and good electron transport properties. These characteristics, its high atomic number and good radiation hardness, make GaAs:Cr a promising semiconductor detector within a wide photon energy range. The excellent imaging performance of these detectors for medical and other several applications are already reported in the literature. In this study, the spatial distributions of photon radiation energy deposition on a GaAs:Cr pixel detector with the real device dimensions (900 μm thick, pixels of 45x45 μm 2 and pitch of 55 μm) are presented. The charge carrier distribution profiles generated by the incident photons was additionally determined and discussed. Using the calculated weighting potential for the detector was possible to estimate the percent of charge carriers that shall contribute to the signal generated in the device electrodes. All the calculations were made for the typical photon energies of 241 Am and the energy corresponding to the K α1 characteristic lines of Mo. The MCNPX code system and ARCHIMEDES program were used for mathematical modeling of radiation transport in matter and for semiconductor device simulations respectively. (Author)

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

Raman study of damage processes in Si+-implanted GaAs

International Nuclear Information System (INIS)

Ivanda, M.; Desnica, U.V.; Haynes, T.E.; Hartmann, I.; Kiefer, W.

1994-09-01

Ion-induced damage in GaAs as a function of ion dose following 100 keV Si + implants has been investigated by Raman spectroscopy. A new approach for decomposition of Raman scattering intensity on to the crystalline and amorphous phase components has been used in analysis of Raman spectra. With increasing ion dose the following was observed: (a) the widths of vibrational bands of a-phase significantly increase, while the width of the LO(Γ) phonon band of c-phase remains unchanged; (b) the longitudinal optical phonon band of c-phase completely dissappears, while the transverse optical phonon mode evolves in to a new band of a-phase; (c) the wavenumbers of all vibrational bands of a- and c-phase shift to lower values by ∼ 10--15 cm -1 . A number of mechanisms possibly accountable for these shifts were analysed and evaluated

Electron transport in nanometer GaAs structure under radiation exposure

CERN Document Server

Demarina, N V

2002-01-01

One investigates into effect of neutron and proton irradiation on electron transport in nanometer GaAs structures. Mathematical model takes account of radiation defects via introduction of additional mechanisms od scattering of carriers at point defects and disordered regions. To investigate experimentally into volt-ampere and volt-farad characteristics one used a structure based on a field-effect transistor with the Schottky gate and a built-in channel. Calculation results of electron mobility, drift rate of electrons, time of energy relaxation and electron pulse are compared with the experimental data

CERTIFICATION OF THE RADIATION RESISTANCE OF COIL INSULATION MATERIAL

CERN Document Server

Polinski, J; Bogdan, P

2013-01-01

The goal of the WP 7.2.1 sub-task of the EuCARD program has been to determine the Nb$_{3}$Sn based accelerator magnet coil electrical insulation resistance against irradiation, which will occur in future accelerators. The scope of the certification covers determination of mechanical, electrical and thermal properties changes due to irradiation. The report presents a selection of the insulation material candidates for future accelerator magnets as well as the definition of the radiation certification methodology with respect of radiation type, energy, doses and irradiation conditions. The test methods and results of the electrical and mechanical insulation materials properties degradation due to irradiation are presented. Thermal conductivity and Kapitza resistance at temperature range from 1.5 K to 2.0 K (superfluid helium conditions) are given.

Radiation damage: special reference to gas filled radiation detectors

International Nuclear Information System (INIS)

Gaur, Sudha; Joshi, Pankaj Kumar; Rathore, Shakuntla

2012-01-01

Radiation damage is a term associated with ionizing radiation. In gas filled particle detectors, radiation damage to gases plays an important role in the device's ageing, especially in devices exposed to high intensity radiation, e.g. detector for the large hadrons collide. Ionization processes require energy above 10 eV, while splitting covalent bond in molecules and generating free radical require only 3-4 eV. The electrical discharges initiated by the ionization event by the particles result in plasma populated by large amount of free radical. The highly reactive free radical can recombine back to original molecules, or initiate a chain of free radical polymerization reaction with other molecules, yielding compounds with increasing molecular weight. These high molecular weight compounds then precipitate from gases phase, forming conductive or non-conductive deposits on the electrodes an insulating surfaces of the detector and distorting it's response. Gases containing hydrocarbon quenchers, e.g. argon-methane, are typically sensitive to ageing by polymerization; addition of oxygen tends to lower the ageing rates. Trace amount of silicon oils, present form out gassing of silicon elastomers and especially from traces of silicon lubricant tend to decompose and form deposits of silicon crystals on the surfaces. Gases mixture of argon (or xenon) with CO 2 and optimally also with 2-3 % of oxygen are highly tolerant to high radiation fluxes. The oxygen is added as noble gas with CO 2 has too high transparency for high energy photons; ozone formed from the oxygen is a strong absorber of ultra violet photons. Carbon tetra fluoride can be used as a component of the gas for high-rate detectors; the fluorine radical produced during the operation however limit the choice of materials for the chambers and electrodes (e.g. gold electrodes are required, as the fluorine radicals attack metals, forming fluorides). Addition of carbon tetra fluoride can however eliminate the

Characteristics of withstanding radiation damage of InP crystals and devices

International Nuclear Information System (INIS)

Yamaguchi, Masafumi; Ando, Koshi

1988-01-01

Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

Radiation damage of nonmetallic solids

International Nuclear Information System (INIS)

Goland, A.N.

1975-01-01

A review of data and information on radiation damage in nonmetallic solids is presented. Discussions are included on defects in nonmetals, radiation damage processes in nonmetals, electronic damage processes, physical damage processes, atomic displacement, photochemical damage processes, and ion implantation

Radiation Damage in Scintillating Crystals

CERN Document Server

Zhu Ren Yuan

1998-01-01

Crystal Calorimetry in future high energy physics experiments faces a new challenge to maintain its precision in a hostile radiation environment. This paper discusses the effects of radiation damage in scintillating crystals, and concludes that the predominant radiation damage effect in crystal scintillators is the radiation induced absorption, or color center formation, not the loss of the scintillation light yield. The importance of maintaining crystal's light response uniformity and the feasibility to build a precision crystal calorimeter under radiation are elaborated. The mechanism of the radiation damage in scintillating crystals is also discussed. While the damage in alkali halides is found to be caused by the oxygen or hydroxyl contamination, it is the structure defects, such as oxygen vacancies, cause damage in oxides. Material analysis methods used to reach these conclusions are presented in details.

Radiation processing of polymer insulators as a method of improving their properties and performance

International Nuclear Information System (INIS)

Ivanov, V.S.; Migunova, L.I.; Kalinina, N.A.; Aleksandrov, G.N.

1995-01-01

Polymer insulators for electric apparatus and high-voltage overhead lines are promising for replacing porcelain and glass insulators. The possibility of application of radiation-chemical technology was showed by manufacture of rod-shaped polymer insulators. In this work, an ethylene and vinyl acetate copolymer was used as the polymer basis of the composition for insulators. By forming a three-dimensional network in polymer bulk radiation processing improves service properties of polymer insulators: shape and heat stability > 200 degree C and stability to tracking erosion > 200 h

Data base of radiation-resistant dielectric and insulating materials

International Nuclear Information System (INIS)

Hama, Yoshimasa; Sunazuka, Hideo; Nashiyama, Isamu; Kakuta, Tsunemi.

1987-01-01

In the data base of radiation-resistant dielectric and insulating materials, the data format contains such items as to give the summary; the data sheet contains the data in concrete form of respective properties from the references; the sheet of references contains the references in the former two. In the above three, there are attached code No., data sheet No., reference No. and key words. In the three areas as radiation-resistant dielectric and insulating materials, i.e., organic materials, inorganic materials and optical fibers, the following are explained: data format, data sheet and objectives. (Mori, K.)

Nuclear spin warm up in bulk n -GaAs

Science.gov (United States)

Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

2016-08-01

We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

Arc damage characteristics of inter-anode insulators in MHD generator

International Nuclear Information System (INIS)

Kato, Ken; Takano, Kiyonami

1990-01-01

The inter-anode arc caused by a Hall field is driven by a magnetic field into the anode-wall in an MHD generator, which limits the lifetime and performance of the generator. The arc damage to inter-anode insulators of an MHD generator has been studied experimentally, in order to obtain basic data for the design of the inter-anode insulation. The experiment was conducted using a pair of electrodes with an insulator between them. Arc currents was supplied from a DC power source and magnetic field was applied perpendicular to the arc current. Experimental parameters are the insulator thickness, arc current, magnetic field and insulator materials. Quartz glass, boron nitride, magnesia, alumina, silicon carbide, silicon nitride etc. were tested and evaluated. The following conclusions are evident from the experiments. Boron nitride and quartz glass are the most promising inter-anode insulators. Boron nitride has a higher arc voltage and longer cutting time than quartz glass, and it is the best material. Cutting time is approximately proportional to the -0.4 th power of the magnetic field. Loss of insulator is approximately proportional to the 0.7 th power of the arc current. The arc voltage increases linearly with the inter anode gap length. It also increases with magnetic field, but decreases with increase of arc current. An equation which approximates to such relations of arc voltage versus inter-anode gap length, arc current and magnetic field has been obtained. The standard deviation of the error of this equation is 12 % for boron nitride and 15 % for quartz glass. (author)

Interface structure and composition of MoO3/GaAs(0 0 1)

Science.gov (United States)

Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

2018-04-01

We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

Effects of thermal ageing and gamma radiations on ethylene-propylene based insulator of electric cables

International Nuclear Information System (INIS)

Baccaro, S.; D'Atanasio, P.

1986-01-01

This paper describes the effects of gamma radiation and thermal aging on cable insulator. The elastic properties degrade rapidly as the absorbed dose increases: the percent elongation at break attains nearly 100% value at 0.5 MGy absorbed dose. The gases evolved during the irradiation are mainly H 2 and CO 2 ; CO, CH 4 and C 2 H 6 are present in much lower concentrations. The damage undergone depends strongly on sequential radiation and thermal aging; the analysis of accelerated life test data by means of the Arrhenius model gave (1.23+-0.25) eV for the activation energy, about 1 eV higher than the values reported in the literature

Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

Energy Technology Data Exchange (ETDEWEB)

Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

2017-04-15

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

Development of GaAs Detectors for Physics at the LHC

CERN Multimedia

Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

2002-01-01

% RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Science.gov (United States)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Analysis and comparison of the breakdown performance of semi- insulator and dielectric passivated Si strip detectors

CERN Document Server

Ranjan, Kirti; Chatterji, S; Srivastava-Ajay, K; Shivpuri, R K

2002-01-01

The harsh radiation environment in future high-energy physics (HEP) experiments like LHC provides a challenging task to the performance of Si microstrip detectors. Normal operating condition for silicon detectors in HEP experiments are in most cases not as favourable as for experiments in nuclear physics. In HEP experiments the detector may be exposed to moisture and other adverse atmospheric environment. It is therefore utmost important to protect the sensitive surfaces against such poisonous effects. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric passivated metal-overhang structures are compared under optimal conditions. The influence of various parameters such as passivation layer thickness, junction dep...

Radiation damage to mushrooms

International Nuclear Information System (INIS)

Sattler, P.W.

1986-01-01

This document contains newspaper cuttings and correspondence with various ministries in Hessen on the subject of radiation damage to mushrooms from the Odenwald area. The reader is given, amongst other things, detailed information on radiation damage to different types of mushroom in 1986. (MG) [de

Radiation-resistant plastic insulators

International Nuclear Information System (INIS)

Sturm, B.J.; Parkinson, W.W.

1975-01-01

A high molecular weight organic composition useful as an electric insulator in radiation fields is provided and comprises normally a solid polymer of an organic compound having a specific resistance greater than 10 19 ohm-cm and containing phenyl groups and 1 to 7.5 weight percent of a high molecular weight organic phosphite. In one embodiment the composition comprises normally solid polystyrene having 7.5 weight percent tris-β-chloroethyl phosphite as an additive; the composition exhibited an increase in the post-irradiation resistivity of over an order of magnitude over the post-irradiation resistivity of pure polystyrene. (Patent Office Record)

GaAs Led based NIEL spectrometer for the space radiation environment

International Nuclear Information System (INIS)

Houdayer, A.J.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.

1999-01-01

A NIEL (non-ionizing-energy-loss) spectrometer for the Mir space station is described. The NIEL spectrometer package contained 20 GaAs LEDs, 10 SiC LEDs and 13 locations for TLD-700s. In order to probe different energy regions of the radiation field, the package is divided into 4 compartments covered by absorbers of varying thicknesses. This device has been submitted to proton irradiation. The effects on both the response time and the intensity of the light were measured as a function of the fluence. One of the advantages of LEDs as radiation monitors is their sensitivity and it is shown that it would be possible to detect a fluence of 4*10 7 p/cm 2 of 10 MeV protons, with sensitivity scaled as 1/E for other energies. (A.C.)

Effects of radiation on insulation materials

International Nuclear Information System (INIS)

Poehlchen, R.

1992-01-01

This presentation will concentrate on the insulation materials which are suitable for the insulation of superconducting magnets for fusion. For the next generation of fusion machines with magnetic confinement as NET and ITER general agreement exists that the insulation will consist of fibre reinforced organic matrix material, a composite. Much effort has been put into the investigation of the radiation resistance of such materials during the last 20-30 years, see in particular the numerous reports of accelerator laboratories on this subject. But very few of the published data are relevant for the superconducting magnets of fusion machines. Either the irradiation and testing was carried out at RT or LN 2 temperature and/or the irradiation spectrum was not representative for a fusion machine and/or the materials investigated are not applicable for the insulation of S.C. fusion magnets. Therefore test programs have been launched recently, one by the NET team. The intention of the first chapter is to give guidance on the choice of materials which are suitable as insulation materials from a more general point of view. A good understanding of the coil manufacturing process is needed for this purpose. The second chapter explains the irradiation spectrum seen by the magnets. A third chapter does present the NET/ITER test programme. Step 1 was completed at the end of 1989, the second step will be carried out in the autumn of 1991. Finally, a general assessment of materials and testing methods will be given with recommendations for further testing

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

Energy Technology Data Exchange (ETDEWEB)

Boardman, D

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

International Nuclear Information System (INIS)

Boardman, D.

2002-01-01

A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

Radiation-induced liver damage

International Nuclear Information System (INIS)

Marcial, V.A.; Santiago-Delpin, E.A.; Lanaro, A.E.; Castro-Vita, H.; Arroyo, G.; Moscol, J.A.; Gomez, C.; Velazquez, J.; Prado, K.

1977-01-01

Due to the recent increase in the use of radiation therapy in the treatment of cancer with or without chemotherapy, the risk of liver radiation damage has become a significant concern for the radiotherapist when the treated tumour is located in the upper abdomen or lower thorax. Clinically evident radiation liver damage may result in significant mortality, but at times patients recover without sequelae. The dose of 3000 rads in 3 weeks to the entire liver with 5 fractions per week of 200 rads each, seems to be tolerated well clinically by adult humans. Lower doses may lead to damage when used in children, when chemotherapy is added, as in recent hepatectomy cases, and in the presence of pre-existent liver damage. Reduced fractionation may lead to increased damage. Increased fractionation, limitation of the dose delivered to the entire liver, and restriction of the high dose irradiation volume may afford protection. With the aim of studying the problems of hepatic radiation injury in humans, a project of liver irradiation in the dog is being conducted. Mongrel dogs are being conditioned, submitted to pre-irradiation studies (haemogram, blood chemistry, liver scan and biopsy), irradiated under conditions resembling human cancer therapy, and submitted to post-irradiation evaluation of the liver. Twenty-two dogs have been entered in the study but only four qualify for the evaluation of all the study parameters. It has been found that dogs are susceptible to liver irradiation damage similar to humans. The initial mortality has been high mainly due to non-radiation factors which are being kept under control at the present phase of the study. After the initial experiences, the study will involve variations in total dose and fractionation, and the addition of anticoagulant therapy for possible prevention of radiation liver injury. (author)

Non-ionizing and ionizing dosimetry in a space radiation environment with GaAs and SiC LEDs

International Nuclear Information System (INIS)

Houdayer, A.; Hinrichsen, P.F.; Barry, A.L.; Ng, A.C.; Carlone, C.; Simard, JF.

1996-01-01

This paper describes a dosimetry experiment that will be carried onboard the Russian MIR space station. The experiment will compare the ionizing and Non-ionizing Energy Loss (NEL) in semiconductors of the radiation encountered in space. The ionizing dose will be detected using ThermoLuminescent Dosimeter (TLD) whereas SiC and GaAs LEDs will be used to measure the nonionizing component. The tray will be mounted on the outside of the station for a minimum period of 4 months. The goal of the experiment is to determine the feasibility of using SiC and GaAs LEDs as NEL dosimeters in space. (author)

Microwave GaAs Integrated Circuits On Quartz Substrates

Science.gov (United States)

Siegel, Peter H.; Mehdi, Imran; Wilson, Barbara

1994-01-01

Integrated circuits for use in detecting electromagnetic radiation at millimeter and submillimeter wavelengths constructed by bonding GaAs-based integrated circuits onto quartz-substrate-based stripline circuits. Approach offers combined advantages of high-speed semiconductor active devices made only on epitaxially deposited GaAs substrates with low-dielectric-loss, mechanically rugged quartz substrates. Other potential applications include integration of antenna elements with active devices, using carrier substrates other than quartz to meet particular requirements using lifted-off GaAs layer in membrane configuration with quartz substrate supporting edges only, and using lift-off technique to fabricate ultrathin discrete devices diced separately and inserted into predefined larger circuits. In different device concept, quartz substrate utilized as transparent support for GaAs devices excited from back side by optical radiation.

Radiation-induced damage of membranes

International Nuclear Information System (INIS)

Yonei, Shuji

1977-01-01

An outline of membranous structure was stated, and radiation-induced damage of membranes were surveyed. By irradiation, permeability of membranes, especially passive transportation mechanism, was damaged, and glycoprotein in the surface layers of cells and the surface layer structures were changed. The intramembranous damage was induced by decrease of electrophoresis of nuclear mambranes and a quantitative change of cytochrome P450 of microsomal membranes of the liver, and peroxidation of membranous lipid and SH substitute damage of membranous protein were mentioned as the mechanism of membranous damage. Recovery of membranous damage depends on radiation dose and temperature, and membranous damage participates largely in proliferation death. (tsunoda, M.)

Electrical insulator requirements for mirror fusion reactors

International Nuclear Information System (INIS)

Condit, R.H.; Van Konynenburg, R.A.

1977-01-01

The requirements for mirror fusion electrical insulators are discussed. Insulators will be required at the neutral beam injectors, injector power supplies, direct converters, and superconducting magnets. Insulators placed at the neutral beam injectors will receive the greatest radiation exposure, 10 14 to 10 16 neutrons/m 2 .s and 0.3 to 3 Gy/s (10 5 to 10 6 R/h) of gamma rays, with shielding. Direct converter insulators may receive the highest temperature (up to 1300 0 K), but low voltage holding requirements. Insulators made from organic materials (e.g., plastics) for the magnet coils may be satisfactory. Immediate conductivity increases of all insulators result from gamma irradiation. With an upper limit to gamma flux exposures of 300 Gy/s in a minimally shielded region, the conductivity could reach 10 -6 S/m. Damage from neutron irradiation may not be serious during several years' exposure. Surface changes in ceramics at the neutral beam injector may be serious. The interior of the injector will contain atomic hydrogen, and sputtering may transfer material away from or onto the ceramic insulators. Unknown and potentially damaging interactions between irradiation, electric fields, temperature gradients, cycling of temperature, surface and joint reactions, sputtering, polarization, and electrotransport in the dielectrics are of concern. Materials research to deal with these problems is needed

Heat Transfer Modeling for Rigid High-Temperature Fibrous Insulation

Science.gov (United States)

Daryabeigi, Kamran; Cunnington, George R.; Knutson, Jeffrey R.

2012-01-01

Combined radiation and conduction heat transfer through a high-temperature, high-porosity, rigid multiple-fiber fibrous insulation was modeled using a thermal model previously used to model heat transfer in flexible single-fiber fibrous insulation. The rigid insulation studied was alumina enhanced thermal barrier (AETB) at densities between 130 and 260 kilograms per cubic meter. The model consists of using the diffusion approximation for radiation heat transfer, a semi-empirical solid conduction model, and a standard gas conduction model. The relevant parameters needed for the heat transfer model were estimated from steady-state thermal measurements in nitrogen gas at various temperatures and environmental pressures. The heat transfer modeling methodology was evaluated by comparison with standard thermal conductivity measurements, and steady-state thermal measurements in helium and carbon dioxide gases. The heat transfer model is applicable over the temperature range of 300 to 1360 K, pressure range of 0.133 to 101.3 x 10(exp 3) Pa, and over the insulation density range of 130 to 260 kilograms per cubic meter in various gaseous environments.

Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

International Nuclear Information System (INIS)

De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

2010-01-01

MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

International Nuclear Information System (INIS)

Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

1982-01-01

A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

Radiation and gas conduction heat transport across a helium dewer multilayer insulation system

Energy Technology Data Exchange (ETDEWEB)

Green, M.A. [Lawrence Berkeley Lab., CA (United States)

1995-02-01

This report describes a method for calculating mixed heat transfer through the multilayer insulation used to insulated a 4K liquid helium cryostat. The method described permits one to estimate the insulation potential for a multilayer insulation system from first principles. The heat transfer regimes included are: radiation, conduction by free molecule gas conduction, and conduction through continuum gas conduction. Heat transfer in the transition region between the two gas conduction regimes is also included.

Cooperative effect of radiation and vapor environments on the deterioration of insulator materials

International Nuclear Information System (INIS)

Kusama, Yasuo; Okada, Sohei; Yagi, Toshiaki; Ito, Masayuki; Yoshida, Kenzo; Tamura, Naoyuki

1985-01-01

Experimental results and speculations are described on the cooperative effect of radiation and vapor environments for the deterioration of insulator cable cladding materials such as polyethylene chlorosulphonate, ethylene propylene rubber, cross-linked polyethylene, chloroprene and silicone rubber, by the separate, simultaneous or subsequent exposure of the above-mentioned two kinds of exposure factors. These experiment was carried out by considering main environmental factors in the LOCA (loss of coolant accident) conditions. Radiation experiment was made by employing 60 Co source of 9.7 kGy/h at a room-temperature air condition. Vapor environment exposure was conducted by the conditions of 120 to 160 deg C steam-saturated air conditions and others. With the experimental results described on the characteristics of the five kinds of the above-mentioned insulator materials in radiation and saturated vapor conditions, the following conclusions were obtained. Acceleration of deterioration by the cooperative action of radiation and saturated vapor was found for the examined materials except the cross-linked polyethylene. In the subsequent exposure of radiation and saturated vapor, deterioration behavior was dependent on insulator materials and component ratios of the insulator materials. For the cross-linked polyethylene, annealing effect by heat was found, and the effect was less significent in the simultaneous exposure. Restoration phenomenon was found in the cross-linked polyethylene even in the saturated vapor exposure stage of the subsequent exposure conditions of radiation exposure followed by saturated vapor. (Takagi, S.)

Long-term radiation effects on commercial cable-insulating materials irradiated at CERN

International Nuclear Information System (INIS)

Maier, P.; Stolarz, A.

1983-01-01

Long-term irradiation damage tests have been carried out on a variety of flexible cable-insulating materials offered to CERN by different European cable manufacturers. Tensile test specimens were exposed for a maximum of three years in high-level radiation areas of the Super Proton Synchrotron (SPS) and for comparison at high dose rates in a nuclear reactor. The degradation of mechanical properties after irradiation in air depends not only on the total absorbed dose, but also on the dose rate for most of these polymer compounds. These dose-rate effects vary between material types and for different compounds. The results presented here illustrate the difference in radiation damage between short-term and long-term irradiation conditions in a typical service application for the various materials tested. They also allow safety factors to be estimated for the extrapolation of the limiting exposure in service from accelerated material tests in the range of dose rates covered. A discussion of the available models of the dose-rate effects results in a conservative estimate for extrapolation to low dose rates from measured values at intermediate dose rates of the order of 0.1 Gy/s. Based on short-term irradiation tests only, the safety factors to be applied depend on the end-point criterion used, and may vary between 1 and 10 for the range of dose rates and materials considered here. (orig.)

Applications of pixellated GaAs X-ray detectors in a synchrotron radiation beam

CERN Document Server

Watt, J; Campbell, M; Mathieson, K; Mikulec, B; O'Shea, V; Passmore, M S; Schwarz, C; Smith, K M; Whitehill, C

2001-01-01

Hybrid semiconductor pixel detectors are being investigated as imaging devices for radiography and synchrotron radiation beam applications. Based on previous work in the CERN RD19 and the UK IMPACT collaborations, a photon counting GaAs pixel detector (PCD) has been used in an X-ray powder diffraction experiment. The device consists of a 200 mu m thick SI-LEC GaAs detector patterned in a 64*64 array of 170 mu m pitch square pixels, bump-bonded to readout electronics operating in single photon counting mode. Intensity peaks in the powder diffraction pattern of KNbO/sub 3/ have been resolved and compared with results using the standard scintillator, and a PCD predecessor (the Omega 3). The PCD shows improved speed, dynamic range, 2-D information and comparable spatial resolution to the standard scintillator based systems. It also overcomes the severe dead time limitations of the Omega 3 by using a shutter based acquisition mode. A brief demonstration of the possibilities of the system for dental radiography and...

Radiation effects on insulators for superconducting magnets

International Nuclear Information System (INIS)

Kernohan, R.H.; Coltman, R.R. Jr.; Long, C.J.

1978-01-01

In order to determine the radiation stability of electrical insulation that could be used in a superconducting magnet for containment of the plasma in a fusion energy device, 55 specimens of eight types of organic insulation were irradiated to a dose of about 2 x 10 8 R (2 x 10 6 J/Kg) at a temperature of 4.8 K in the Low-Temperature Irradiation Facility in the Bulk Shielding Reactor at Oak Ridge National Laboratory. Four of the specimens were monitored for changes in electrical resistivity during the irradiation. The initial resistivities, which were of the order of 10 14 Ω cm, decreased to about 10 13 Ω cm under the influence of a weak radiation field. At full-power reactor operation (2 MW), the resistivities dropped to about 10 11 Ω cm, but changed little during the irradiation. After the irradiation the resistivities increased, but not to the initial values, because of residual radioactivity near or in the experiment assembly. Restoration to near the initial resistivity values was later observed upon warming the specimens to room temperature and purging the irradiation chamber. The latter result may be related to outgassing induced by the irradiation

GaAs circuit restructuring by multi-level laser-direct-written tungsten process

International Nuclear Information System (INIS)

Black, J.G.; Doran, S.P.; Rothschild, M.; Sedlacek, J.H.C.; Ehrlich, D.J.

1987-01-01

Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel interconnections. These combined direct-write processes provide the flexibility of clip-lead prototyping on a micrometer scale

Verification of the behavior of insulating materials under ionizing radiation

International Nuclear Information System (INIS)

Reis, Joao C. Marques dos; Rezende, Aurimar de P.; Menzel, Silvio C.

2009-01-01

To analyze the behavior of specifics electrical insulating materials and components under ionizing radiation, a test program was developed to verify the overall effects of general electrical equipment under high radiation fields conditions. The main objective is for maintenance purposes, in the substitution of electrical components installed in the reactor building of the Angra 1 nuclear power plant. Knowing the characteristics of electrical insulating materials available in the country and determining by tests their ability to withstand the ionizing radiation effects, is feasible to implement specific maintenance services of electrical equipment, maintaining the same level of quality and safety for the specified application. This procedure reduces the time and also costs of maintenance services, in comparison with materials acquired or services performed abroad. The isolating materials and components of electrical equipment should be specified, manufactured and qualified to withstand aggressive environmental conditions in the reactor building during the normal operation and postulated accident. Additional tests should be conducted to verify the conditions of the aged material by ionizing radiation. Examples of additional tests: dielectric strength, tensile strength and elongation and impact resistance. (author)

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

Science.gov (United States)

Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

2018-01-01

Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

Directory of Open Access Journals (Sweden)

Wei-Fu Wang

2018-01-01

Full Text Available Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3 along with diffused germanium donors whose concentration (>>1018/cm3 determined by electro-chemical capacitance-voltage (ECV profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

Radiation and temperature effects in gallium arsenide, indium phosphide, and silicon solar cells

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Hart, R. E., Jr.; Statler, R. L.

1987-01-01

The effects of radiation on performance are determined for both n+p and p+n GaAs and InP cells and for silicon n+p cells. It is found that the radiation resistance of InP is greater than that of both GaAs and Si under 1-MeV electron irradiation. For silicon, the observed decreased radiation resistance with decreased resistivity is attributed to the presence of a radiation-induced boron-oxygen defect. Comparison of radiation damage in both p+n and n+p GaAs cells yields a decreased radiation resistance for the n+p cell attributable to increased series resistance, decreased shunt resistance, and relatively greater losses in the cell's p-region. For InP, the n+p configuration is found to have greater radiation resistance than the p+n cell. The increased loss in this latter cell is attributed to losses in the cell's emitter region. Temperature dependency results are interpreted using a theoretical relation for dVoc/dT, which predicts that increased Voc should result in decreased numerical values for dPm/dT. The predicted correlation is observed for GaAs but not for InP, a result which is attributed to variations in cell processing.

Insulators for fusion applications

International Nuclear Information System (INIS)

1987-04-01

Design studies for fusion devices and reactors have become more detailed in recent years and with this has come a better understanding of requirements and operating conditions for insulators in these machines. Ceramic and organic insulators are widely used for many components of fusion devices and reactors namely: radio frequency (RF) energy injection systems (BeO, Al 2 O 3 , Mg Al 2 O 4 , Si 3 N 4 ); electrical insulation for the torus structure (SiC, Al 2 O 3 , MgO, Mg Al 2 O 4 , Si 4 Al 2 O 2 N 6 , Si 3 N 4 , Y 2 O 3 ); lightly-shielded magnetic coils (MgO, MgAl 2 O 4 ); the toroidal field coil (epoxies, polyimides), neutron shield (B 4 C, TiH 2 ); high efficiency electrical generation; as well as the generation of very high temperatures for high efficiency hydrogen production processes (ZrO 2 and Al 2 O 3 - mat, graphite and carbon - felt). Timely development of insulators for fusion applications is clearly necessary. Those materials to be used in fusion machines should show high resistance to radiation damage and maintain their structural integrity. Now the need is urgent for a variety of radiation resistant materials, but much effort in these areas is required for insulators to be considered seriously by the design community. This document contains 14 papers from an IAEA meeting. It was the objective of this meeting to identify existing problems in analysing various situations of applications and requirements of electrical insulators and ceramics in fusion and to recommend strategies and different stages of implementation. This meeting was endorsed by the International Fusion Research Council

Repair of radiation damage in mammalian cells

Energy Technology Data Exchange (ETDEWEB)

Setlow, R.B.

1981-01-01

The responses, such as survival, mutation, and carcinogenesis, of mammalian cells and tissues to radiation are dependent not only on the magnitude of the damage to macromolecular structures - DNA, RNA, protein, and membranes - but on the rates of macromolecular syntheses of cells relative to the half-lives of the damages. Cells possess a number of mechanisms for repairing damage to DNA. If the repair systems are rapid and error free, cells can tolerate much larger doses than if repair is slow or error prone. It is important to understand the effects of radiation and the repair of radiation damage because there exist reasonable amounts of epidemiological data that permits the construction of dose-response curves for humans. The shapes of such curves or the magnitude of the response will depend on repair. Radiation damage is emphasized because: (a) radiation dosimetry, with all its uncertainties for populations, is excellent compared to chemical dosimetry; (b) a number of cancer-prone diseases are known in which there are defects in DNA repair and radiation results in more chromosomal damage in cells from such individuals than in cells from normal individuals; (c) in some cases, specific radiation products in DNA have been correlated with biological effects, and (d) many chemical effects seem to mimic radiation effects. A further reason for emphasizing damage to DNA is the wealth of experimental evidence indicating that damages to DNA can be initiating events in carcinogenesis.

Repair of radiation damage in mammalian cells

International Nuclear Information System (INIS)

Setlow, R.B.

1981-01-01

The responses, such as survival, mutation, and carcinogenesis, of mammalian cells and tissues to radiation are dependent not only on the magnitude of the damage to macromolecular structures - DNA, RNA, protein, and membranes - but on the rates of macromolecular syntheses of cells relative to the half-lives of the damages. Cells possess a number of mechanisms for repairing damage to DNA. If the repair systems are rapid and error free, cells can tolerate much larger doses than if repair is slow or error prone. It is important to understand the effects of radiation and the repair of radiation damage because there exist reasonable amounts of epidemiological data that permits the construction of dose-response curves for humans. The shapes of such curves or the magnitude of the response will depend on repair. Radiation damage is emphasized because: (a) radiation dosimetry, with all its uncertainties for populations, is excellent compared to chemical dosimetry; (b) a number of cancer-prone diseases are known in which there are defects in DNA repair and radiation results in more chromosomal damage in cells from such individuals than in cells from normal individuals; (c) in some cases, specific radiation products in DNA have been correlated with biological effects, and (d) many chemical effects seem to mimic radiation effects. A further reason for emphasizing damage to DNA is the wealth of experimental evidence indicating that damages to DNA can be initiating events in carcinogenesis

Thermal Decomposition of Radiation-Damaged Polystyrene

International Nuclear Information System (INIS)

J Abrefah, J.; Klinger, G.S.

2000-01-01

The radiation-damaged polystyrene material (''polycube'') used in this study was synthesized by mixing a high-density polystyrene (''Dylene Fines No. 100'') with plutonium and uranium oxides. The polycubes were used on the Hanford Site in the 1960s for criticality studies to determine the hydrogen-to-fissile atom ratios for neutron moderation during processing of spent nuclear fuel. Upon completion of the studies, two methods were developed to reclaim the transuranic (TRU) oxides from the polymer matrix: (1) burning the polycubes in air at 873 K; and (2) heating the polycubes in the absence of oxygen and scrubbing the released monomer and other volatile organics using carbon tetrachloride. Neither of these methods was satisfactory in separating the TRU oxides from the polystyrene. Consequently, the remaining polycubes were sent to the Hanford Plutonium Finishing Plant (PFP) for storage. Over time, the high dose of alpha and gamma radiation has resulted in a polystyrene matrix that is highly cross-linked and hydrogen deficient and a stabilization process is being developed in support of Defense Nuclear Facility Safety Board Recommendation 94-1. Baseline processes involve thermal treatment to pyrolyze the polycubes in a furnace to decompose the polystyrene and separate out the TRU oxides. Thermal decomposition products from this degraded polystyrene matrix were characterized by Pacific Northwest National Laboratory to provide information for determining the environmental impact of the process and for optimizing the process parameters. A gas chromatography/mass spectrometry (GC/MS) system coupled to a horizontal tube furnace was used for the characterization studies. The decomposition studies were performed both in air and helium atmospheres at 773 K, the planned processing temperature. The volatile and semi-volatile organic products identified for the radiation-damaged polystyrene were different from those observed for virgin polystyrene. The differences were in the

Highly radiation-resistant vacuum impregnation resin systems for fusion magnet insulation

International Nuclear Information System (INIS)

Fabian, P.E.; Munshi, N.A.; Denis, R.J.

2002-01-01

Magnets built for fusion devices such as the newly proposed Fusion Ignition Research Experiment (FIRE) need to be highly reliable, especially in a high radiation environment. Insulation materials are often the weak link in the design of superconducting magnets due to their sensitivity to high radiation doses, embrittlement at cryogenic temperatures, and the limitations on their fabricability. An insulation system capable of being vacuum impregnated with desirable properties such as a long pot-life, high strength, and excellent electrical integrity and which also provides high resistance to radiation would greatly improve magnet performance and reduce the manufacturing costs. A new class of insulation materials has been developed utilizing cyanate ester chemistries combined with other known radiation-resistant resins, such as bismaleimides and polyimides. These materials have been shown to meet the demanding requirements of the next generation of devices, such as FIRE. Post-irradiation testing to levels that exceed those required for FIRE showed no degradation in mechanical properties. In addition, the cyanate ester-based systems showed excellent performance at cryogenic temperatures and possess a wide range of processing variables, which will enable cost-effective fabrication of new magnets. This paper details the processing parameters, mechanical properties at 76 K and 4 K, as well as post-irradiation testing to dose levels surpassing 10 8 Gy

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2006-01-01

The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

Computer simulations of radiation damage in protein crystals

International Nuclear Information System (INIS)

Zehnder, M.

2007-03-01

The achievable resolution and the quality of the dataset of an intensity data collection for structure analysis of protein crystals with X-rays is limited among other factors by radiation damage. The aim of this work is to obtain a better quantitative understanding of the radiation damage process in proteins. Since radiation damage is unavoidable it was intended to look for the optimum ratio between elastically scattered intensity and radiation damage. Using a Monte Carlo algorithm physical processes after an inelastic photon interaction are studied. The main radiation damage consists of ionizations of the atoms through the electron cascade following any inelastic photon interaction. Results of the method introduced in this investigation and results of an earlier theoretical studies of the influence of Auger-electron transport in diamond are in a good agreement. The dependence of the radiation damage as a function of the energy of the incident photon was studied by computer-aided simulations. The optimum energy range for diffraction experiments on the protein myoglobin is 10-40 keV. Studies of radiation damage as a function of crystal volume and shape revealed that very small plate or rod shaped crystals suffer less damage than crystals formed like a cube with the same volume. Furthermore the influence of a few heavy atoms in the protein molecule on radiation damage was examined. Already two iron atoms in the unit cell of myoglobin increase radiation damage significantly. (orig.)

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

Science.gov (United States)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Defects introduced by Ar plasma exposure in GaAs probed by monoenergetic positron beam

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Wada, Kazumi; Nakanishi, Hideo

1994-10-01

Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the exposure was found to extend far beyond the stopping range of Ar ions, and the dominant defects were identified as interstitial-type defects. After 100degC annealing, such defects were annealed. Instead, vacancy-type defects were found to be the dominant defects in the subsurface region. (author).

Radiation damage in barium fluoride detector materials

International Nuclear Information System (INIS)

Levey, P.W.; Kierstead, J.A.; Woody, C.L.

1988-01-01

To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF 2 , both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF 2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 60 C0 gamma rays. Doses of 10 6 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF 2 develop damage at minimum detectable levels in the UV---which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials

Radiation damages in solids and tissues

International Nuclear Information System (INIS)

Cevc, P.; Kogovsek, F.; Kanduser, A.; Peternelj, M.; Skaleric, U.; Funduk, N.

1977-01-01

In submitted research work we have studied radiation damages in ferroelectric crystals and application of ferroelectric crystals. Studying the radiation damages we have introduced new technique of EPR measurements under high hydrostatic pressure, that will enable us to obtain additional data on crystal lattice dynamics. A change of piroelectric coefficient with high radiation doses in dopped TGS has been measured also

Combined Heat Transfer in High-Porosity High-Temperature Fibrous Insulations: Theory and Experimental Validation

Science.gov (United States)

Daryabeigi, Kamran; Cunnington, George R.; Miller, Steve D.; Knutson, Jeffry R.

2010-01-01

Combined radiation and conduction heat transfer through various high-temperature, high-porosity, unbonded (loose) fibrous insulations was modeled based on first principles. The diffusion approximation was used for modeling the radiation component of heat transfer in the optically thick insulations. The relevant parameters needed for the heat transfer model were derived from experimental data. Semi-empirical formulations were used to model the solid conduction contribution of heat transfer in fibrous insulations with the relevant parameters inferred from thermal conductivity measurements at cryogenic temperatures in a vacuum. The specific extinction coefficient for radiation heat transfer was obtained from high-temperature steady-state thermal measurements with large temperature gradients maintained across the sample thickness in a vacuum. Standard gas conduction modeling was used in the heat transfer formulation. This heat transfer modeling methodology was applied to silica, two types of alumina, and a zirconia-based fibrous insulation, and to a variation of opacified fibrous insulation (OFI). OFI is a class of insulations manufactured by embedding efficient ceramic opacifiers in various unbonded fibrous insulations to significantly attenuate the radiation component of heat transfer. The heat transfer modeling methodology was validated by comparison with more rigorous analytical solutions and with standard thermal conductivity measurements. The validated heat transfer model is applicable to various densities of these high-porosity insulations as long as the fiber properties are the same (index of refraction, size distribution, orientation, and length). Furthermore, the heat transfer data for these insulations can be obtained at any static pressure in any working gas environment without the need to perform tests in various gases at various pressures.

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

Energy Technology Data Exchange (ETDEWEB)

Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2015-08-15

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

International Nuclear Information System (INIS)

Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

2015-01-01

Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

Radiation damage in biomolecular systems

CERN Document Server

Fuss, Martina Christina

2012-01-01

Since the discovery of X-rays and radioactivity, ionizing radiations have been widely applied in medicine both for diagnostic and therapeutic purposes. The risks associated with radiation exposure and handling led to the parallel development of the field of radiation protection. Pioneering experiments done by Sanche and co-workers in 2000 showed that low-energy secondary electrons, which are abundantly generated along radiation tracks, are primarily responsible for radiation damage through successive interactions with the molecular constituents of the medium. Apart from ionizing processes, which are usually related to radiation damage, below the ionization level low-energy electrons can induce molecular fragmentation via dissociative processes such as internal excitation and electron attachment. This prompted collaborative projects between different research groups from European countries together with other specialists from Canada,  the USA and Australia. This book summarizes the advances achieved by these...

Status of fully integrated GaAs particle detectors

International Nuclear Information System (INIS)

Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

1999-01-01

GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

Identification of defects in undoped semi-insulating InP by positron lifetime

International Nuclear Information System (INIS)

Mao Weidong; Wang Shaojie; Wang Zhu

2001-01-01

Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime of around 273 ps, which is associated with indium vacancies V In or V In -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then remains unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag and Ca with ionization level (1-)

Radiation damage calculations for compound materials

International Nuclear Information System (INIS)

Greenwood, L.R.

1990-01-01

This paper reports on the SPECOMP computer code, developed to calculate neutron-induced displacement damage cross sections for compound materials such as alloys, insulators, and ceramic tritium breeders for fusion reactors. These new calculations rely on recoil atom energy distributions previously computed with the DISCS computer code, the results of which are stored in SPECTER computer code master libraries. All reaction channels were considered in the DISCS calculations and the neutron cross sections were taken from ENDF/B-V. Compound damage calculations with SPECOMP thus do not need to perform any recoil atom calculations and consequently need no access to ENDF or other neutron data bases. The calculations proceed by determining secondary displacements for each combination of recoil atom and matrix atom using the Lindhard partition of the recoil energy to establish the damage energy

Radiation Crosslinking of Small Electrical Wire Insulator Fabricated from NR-LDPE Blend

International Nuclear Information System (INIS)

Chyagrit, S.

2006-01-01

Blending of block natural rubber (STR-5L) and LDPE with phthalic anhydride (PA) as copatibilizer was put to the test for the purpose of a fabrication into small electrical wire insulator. It was found that PA at concentration of 1.0 - 1.5% in NR/PE of 50/50 so fabricated into the insulator, after gamma ray cross-linked at a dose of 180 kGy in limited air, could meet Thai Industrial Standard (TIS) 11-2531 of small eletrical insulator (<300 V). Effect of radiation dose on tensile, hardness, elongation at break, modulus 100%, limiting oxigen index (LOI) were investigated. It was noted that to comply with TIS 11-2531 for vertical flame retardance test, a suitable flame retardance was needed for the insulator

Thermal annealing of natural, radiation-damaged pyrochlore

Energy Technology Data Exchange (ETDEWEB)

Zietlow, Peter; Beirau, Tobias; Mihailova, Boriana; Groat, Lee A.; Chudy, Thomas; Shelyug, Anna; Navrotsky, Alexandra; Ewing, Rodney C.; Schlüter, Jochen; Škoda, Radek; Bismayer, Ulrich

2017-01-01

Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400–1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1·10

Corneal Damage from Infrared Radiation

National Research Council Canada - National Science Library

McCally, Russell

2000-01-01

...) laser radiation at 10.6 (micrometer) and Tm: YAG laser radiation at 2.02 (micrometer). Retinal damage from sources with rectangular irradiance distributions was also modeled. Thresholds for CO(2...

Photovoltaic X-ray detectors based on epitaxial GaAs structures

Energy Technology Data Exchange (ETDEWEB)

Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

2005-12-01

A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

Studies on the strategies of minimizing radiation damage

Energy Technology Data Exchange (ETDEWEB)

Chung, Hee Yong; Sohn, Young Sook

1998-04-01

We studied on the strategies of minimizing radiation damage in animal system. To this end we studied following areas of research (1) mechanisms involved in bone marrow damage after total body irradiation, (2) extraction of components that are useful in protecting hematopoietic system from radiation damage, (3) cell therapy approach in restoring the damaged tissue, (4) development of radioprotective chemical reagent, and (5) epidemiological study on the population that had been exposed to radiation.

Studies on the strategies of minimizing radiation damage

International Nuclear Information System (INIS)

Chung, Hee Yong; Sohn, Young Sook

1998-04-01

We studied on the strategies of minimizing radiation damage in animal system. To this end we studied following areas of research 1) mechanisms involved in bone marrow damage after total body irradiation, 2) extraction of components that are useful in protecting hematopoietic system from radiation damage, 3) cell therapy approach in restoring the damaged tissue, 4) development of radioprotective chemical reagent, and 5) epidemiological study on the population that had been exposed to radiation

Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse

Science.gov (United States)

Xiao-Wen, Xi; Chang-Chun, Chai; Gang, Zhao; Yin-Tang, Yang; Xin-Hai, Yu; Yang, Liu

2016-04-01

The damage effect and mechanism of the electromagnetic pulse (EMP) on the GaAs pseudomorphic high electron mobility transistor (PHEMT) are investigated in this paper. By using the device simulation software, the distributions and variations of the electric field, the current density and the temperature are analyzed. The simulation results show that there are three physical effects, i.e., the forward-biased effect of the gate Schottky junction, the avalanche breakdown, and the thermal breakdown of the barrier layer, which influence the device current in the damage process. It is found that the damage position of the device changes with the amplitude of the step voltage pulse. The damage appears under the gate near the drain when the amplitude of the pulse is low, and it also occurs under the gate near the source when the amplitude is sufficiently high, which is consistent with the experimental results. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900), and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (CAEP) (Grant No. 2015-0214.XY.K).

Surface science analysis of GaAs photocathodes following sustained electron beam delivery

Directory of Open Access Journals (Sweden)

V. Shutthanandan

2012-06-01

Full Text Available Degradation of the photocathode materials employed in photoinjectors represents a challenge for sustained operation of nuclear physics accelerators and high power free electron lasers (FEL. Photocathode quantum efficiency degradation is due to residual gases in the electron source vacuum system being ionized and accelerated back to the photocathode. These investigations are a first attempt to characterize the nature of the photocathode degradation, and employ multiple surface and bulk analysis techniques to investigate damage mechanisms including sputtering of the Cs-oxidant surface monolayer, other surface chemistry effects, and ion implantation. Surface and bulk analysis studies were conducted on two GaAs photocathodes, which were removed from the JLab FEL DC photoemission gun after delivering electron beam, and two control samples. The analysis techniques include helium ion microscopy, Rutherford backscattering spectrometry (RBS, atomic force microscopy, and secondary ion mass spectrometry (SIMS. In addition, two high-polarization strained superlattice GaAs photocathode samples, one removed from the continuous electron beam accelerator facility (CEBAF photoinjector and one unused, were also analyzed using transmission electron microscopy (TEM and SIMS. It was found that heat cleaning the FEL GaAs wafer introduces surface roughness, which seems to be reduced by prolonged use. The bulk GaAs samples retained a fairly well organized crystalline structure after delivering beam but show evidence of Cs depletion on the surface. Within the precision of the SIMS and RBS measurements, the data showed no indication of hydrogen implantation or lattice damage from ion back bombardment in the bulk GaAs wafers. In contrast, SIMS and TEM measurements of the strained superlattice photocathode show clear crystal damage in the wafer from ion back bombardment.

Propagation and generation of Josephson radiation in superconductor/insulator superlattices

International Nuclear Information System (INIS)

Auvil, P.R.; Ketterson, J.B.

1987-01-01

The wave propagation and generation characteristics of a metal-insulator superlattice are calculated in a low-field Landau--Ginzburg model, including Josephson coupling through the insulating layers. It is shown that a significant increase in the phase velocity of the electromagnetic waves propagating in the superlattice occurs when the thickness of the superconducting layers becomes much less than the London penetration depth, suggesting that increased output of Josephson radiation may be achieved from such structures. Wave generation via the ac Josephson effect (in the presence of applied dc electric and magnetic fields) is studied for both parallel and series driven multilayer structures

Programmed cellular response to ionizing radiation damage

International Nuclear Information System (INIS)

Crompton, N.E.A.

1998-01-01

Three forms of radiation response were investigated to evaluate the hypothesis that cellular radiation response is the result of active molecular signaling and not simply a passive physicochemical process. The decision whether or not a cell should respond to radiation-induced damage either by induction of rescue systems, e.g. mobilization of repair proteins, or induction of suicide mechanisms, e.g. programmed cell death, appears to be the expression of intricate cellular biochemistry. A cell must recognize damage in its genetic material and then activate the appropriate responses. Cell type is important; the response of a fibroblast to radiation damage is both quantitatively and qualitatively different form that of a lymphocyte. The programmed component of radiation response is significant in radiation oncology and predicted to create unique opportunities for enhanced treatment success. (orig.)

The radiation-sterilization of semi-synthetic penicillins

International Nuclear Information System (INIS)

Jacobs, G.P.

1979-01-01

Gamma-irradiation in the dry state of the semi-synthetic penicillins, amoxycillin trihydrate, flucloxacillin-Na, methicillin-Na results in minimal degradation even following a 5 Mrad dose, suggesting the feasibility of their radiation-sterilization. Carbenicillin-Na is more susceptible to radiation-induced degradation but is nevertheless not affected by 1 Mrad dose. This 'low' dose may be suitable for carbenicillin with very low initial contamination. (author)

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

Science.gov (United States)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Radiation damage in diatomic materials at high doses

International Nuclear Information System (INIS)

Hobbs, L.W.; Hughes, A.E.

1975-10-01

Radiation effects in diatomic materials can differ structurally from those in metals because of the need to take into account different displacement rates on the two sublattices and the inevitable stoichiometric implications; in most diatomic insulators the anion species has the greater displacement cross section. Anion point defect stabilisation in heavily-irradiated (0.1 to 10 dpa) diatomic insulators has been studied using radiolysis of alkali and alkaline earth halides. A temperatures > 0.3 Tsub(m), all anion defects are mobile and can aggregate. Aggregation of anion interstitials results in creation of perfect dislocation loops without the need for primary cation displacements; simultaneous formation of substitutional anion molecular centres provides the necessary cation interstitials. Aggregation of anion vacancies leads to formation of metallic inclusions of the cation species, in some cases in an ordered array, which is the analogue, on a single sublattice, to the void lattice in metals. Availability of sinks for both anion interstitials and anion vacancies yields defect growth kinetics similar to those observed during formation of voids in irradiated metals, and a very high level of damage (approximately 10%) can be sustained in the lattice. The width of the temperature region concerned is much narrower, however, due to the possibility of recombination of aggregated or re-emitted anion vacancies with mobile or dispersed anion molecular defects; the latter can also aggregate to form fluid anion molecular inclusions and so complete the decomposition of the solid into separate phases of its constituent elements. (author)

Data compilation for radiation effects on ceramic insulators

International Nuclear Information System (INIS)

Fukuya, Koji; Terasawa, Mititaka; Nakahigashi, Shigeo; Ozawa, Kunio.

1986-08-01

Data of radiation effects on ceramic insulators were compiled from the literatures and summarized from the viewpoint of fast neutron irradiation effects. The data were classified according to the properties and ceramics. The properties are dimensional stability, mechanical property, thermal property and electrical and dielectric properties. The data sheets for each table or graph in the literatures were made. The characteristic feature of the data base was briefly described. (author)

Strain buildup in GaAs due to 100 MeV Ag ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Mishra, Shramana; Bhaumik, Sudipta; Panda, Jaya Kumar [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Ojha, Sunil [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Dhar, Achintya [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India); Kabiraj, D. [Inter-University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Roy, Anushree, E-mail: anushree@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302 (India)

2013-12-01

The formation of strained layers and a non-monotonic evolution of strain in high energy (100 MeV) silver ion (Ag{sup 7+}) irradiated undoped semi-insulating GaAs are observed and analyzed using Raman scattering and high resolution X-ray diffraction (HRXRD) measurements. At low fluence, compressively strained layers are formed, whereas, with increase in fluence both compressive and tensile strains appear as observed from HRXRD measurements. Further, at low fluence, the change in compressive strain with increase in fluence is found to be sharper than what is observed at higher fluence, thereby suggesting a critical fluence value, beyond which there is a simultaneous generation and annihilation of vacancy type defects. The initial blue shift and subsequent relative red shift beyond above critical fluence in the Raman peak also qualitatively reveal non-monotonic evolution of strain in this case. Finally, we demonstrate the sensitivity of Raman spectroscopy in detecting the decrease in lattice ordering in the crystal in the low fluence regime, below the detection limit of Rutherford back-scattering channeling (c-RBS) measurements.

Mechanisms for radiation damage in DNA

International Nuclear Information System (INIS)

Sevilla, M.D.

1993-12-01

In this project the author has proposed several mechanisms for radiation damage to DNA and its constituents, and has detailed a series of experiments utilizing electron spin resonance spectroscopy, HPLC, GC-mass spectroscopy and ab initio molecular orbital calculations to test the proposed mechanisms. In this years work he has completed several experiments on the role of hydration water on DNA radiation damage, continued the investigation of the localization of the initial charges and their reactions on DNA, investigated protonation reactions in DNA base anions, and employed ab initio molecular orbital theory to gain insight into the initial events of radiation damage to DNA. Ab initio calculations have provided an understanding of the energetics evolved in anion and cation formation, ion radical transfer in DNA as well as proton transfer with DNA base pair radical ions. This has been extended in this years work to a consideration of ionization energies of various components of the DNA deoxyribose backbone and resulting neutral sugar radicals. This information has aided the formation of new radiation models for the effect of radiation on DNA. During this fiscal year four articles have been published, four are in press, one is submitted and several more are in preparation. Four papers have been presented at scientific meetings. This years effort will include another review article on the open-quotes Electron Spin Resonance of Radiation Damage to DNAclose quotes

Radiation damage to nucleoprotein complexes in macromolecular crystallography

International Nuclear Information System (INIS)

Bury, Charles; Garman, Elspeth F.; Ginn, Helen Mary; Ravelli, Raimond B. G.; Carmichael, Ian; Kneale, Geoff; McGeehan, John E.

2015-01-01

Quantitative X-ray induced radiation damage studies employing a model protein–DNA complex revealed a striking partition of damage sites. The DNA component was observed to be far more resistant to specific damage compared with the protein. Significant progress has been made in macromolecular crystallography over recent years in both the understanding and mitigation of X-ray induced radiation damage when collecting diffraction data from crystalline proteins. In contrast, despite the large field that is productively engaged in the study of radiation chemistry of nucleic acids, particularly of DNA, there are currently very few X-ray crystallographic studies on radiation damage mechanisms in nucleic acids. Quantitative comparison of damage to protein and DNA crystals separately is challenging, but many of the issues are circumvented by studying pre-formed biological nucleoprotein complexes where direct comparison of each component can be made under the same controlled conditions. Here a model protein–DNA complex C.Esp1396I is employed to investigate specific damage mechanisms for protein and DNA in a biologically relevant complex over a large dose range (2.07–44.63 MGy). In order to allow a quantitative analysis of radiation damage sites from a complex series of macromolecular diffraction data, a computational method has been developed that is generally applicable to the field. Typical specific damage was observed for both the protein on particular amino acids and for the DNA on, for example, the cleavage of base-sugar N 1 —C and sugar-phosphate C—O bonds. Strikingly the DNA component was determined to be far more resistant to specific damage than the protein for the investigated dose range. At low doses the protein was observed to be susceptible to radiation damage while the DNA was far more resistant, damage only being observed at significantly higher doses

Molecular mechanisms in radiation damage to DNA

International Nuclear Information System (INIS)

Osman, R.

1991-01-01

The objectives of this work are to elucidate the molecular mechanisms that are responsible for radiation-induced DNA damage. The overall goal is to understand the relationship between the chemical and structural changes produced by ionizing radiation in DNA and the resulting impairment of biological function expressed as carcinogenesis or cell death. The studies are based on theoretical explorations of possible mechanisms that link initial radiation damage in the form of base and sugar damage to conformational changes in DNA. These mechanistic explorations should lead to the formulation of testable hypothesis regarding the processes of impairment of regulation of gene expression, alternation in DNA repair, and damage to DNA structure involved in cell death or cancer

Measurement of radiation damage on an optical reflector

International Nuclear Information System (INIS)

Peng, K.C.; Sahu, S.K.; Huang, H.C.; Ueno, K.; Chang, Y.H.; Wang, C.H.; Hou, W.S.

1997-01-01

We measured the radiation damage on an optical white fluorocarbon reflector called Goretex, which is to be used for aerogel threshold counters and crystal calorimeters of the BELLE detector of the KEK B-factory. Reflectance of the Goretex surface was monitored to see any effect of the radiation damage. Maximum equivalent dose was 8.6 Mrad. No radiation damage is observed within measurement errors. (orig.)

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

International Nuclear Information System (INIS)

Franc, J.; Kubat, J.; Grill, R.; Dedic, V.; Hlidek, P.; Moravec, P.; Belas, E.

2011-01-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Evaluation of the quality of semi-insulating CdTe for radiation detectors by measurement of lux-ampere characteristics

Science.gov (United States)

Franc, J.; Kubát, J.; Grill, R.; Dědič, V.; Hlídek, P.; Moravec, P.; Belas, E.

2011-05-01

Accumulation of space charge on deep levels represents one of the major problems in fabrication of semi-insulating CdTe and CdZnTe X-ray and gamma-ray detectors, because it influences the applied electric field and can even result in a complete breakdown of the field in part of the sample (polarization and dead layer formation). The goal of the study was to evaluate possibilities of localization of areas of potential space charge accumulation in as grown crystals by steady state measurement of lux-ampere characteristics. All measurements were done at room temperature using He-Ne laser. Voltage was applied parallel to the direction of light propagation in the range 10-100 V. It was observed that all lux-ampere characteristics are sub-linear. Screening effects caused by space charge accumulated on deep levels explain these results. Crystals prepared by Vertical gradient freeze method in our laboratory are compared to a commercially available detector-grade sample prepared by Travelling heater method. Comparison of crystals grown from precursors of different starting purity shows an increase of the slope of lux-ampere characteristics with a decrease of impurity content. A correlation between the slope of lux-ampere characteristics and the mobility-lifetime product of electrons was observed, too.

Radiative contribution to the thermal conductivity of fibrous insulations

Science.gov (United States)

Linford, R. M. F.; Schmitt, R. J.; Hughes, T. A.

1974-01-01

An approach is shown for using a simple two-flux model to interpret infrared transmission data for a variety of reuseable surface insulations materials and to calculate the radiation transmission. A description is given of preliminary experiments on mullite and silica-based materials. The calculated parameters are compared with the measured values of the total thermal conductivity, as determined on guarded hot plate equipment. It is pointed out that for many samples the newly developed four-flux model must be utilized because the scattering properties of the fibers are often dependent on the wavelength of the radiation.

RESEARCH OF THE INFLUENCE OF VARIOUS FACTORS ON THE ACCURACY OF DETERMINING OF PARAMETERS AND PLACE OF INSULATION DAMAGE IN THE ELECTRIC NETWORKS OF 6 TO 35 KV

Directory of Open Access Journals (Sweden)

Naraeva R.R

2013-12-01

Full Text Available The present paper is devoted to the research of the method for determining the parameters and plot of insulation damage in the networks of 6 to 35 kV with isolated neutral on the basis of measuring the operating parameters of the network. In the considered three-phase circuit with a symmetric source of EMF and symmetric loading there was a damage of insulation in one of the phases. The calculations are carried out for the transmission line equivalent circuit with a branch line by means of node-potential method. An investigation of the influence of the magnitude of insulation conductivity in the place of damage of different sections of the network upon the accuracy of determining the insulation conductivity is conducted using the data from digital models. The research of this method is performed by advancing hypotheses about the place of damage and by considering the influence of the multiplicity of increasing insulation conductivity of the damaged section and accuracy class of measuring devices.

Radiation effects in silicon and gallium arsenide solar cells using isotropic and normally incident radiation

Science.gov (United States)

Anspaugh, B. E.; Downing, R. G.

1984-01-01

Several types of silicon and gallium arsenide solar cells were irradiated with protons with energies between 50 keV and 10 MeV at both normal and isotropic incidence. Damage coefficients for maximum power relative to 10 MeV were derived for these cells for both cases of omni-directional and normal incidence. The damage coefficients for the silicon cells were found to be somewhat lower than those quoted in the Solar Cell Radiation Handbook. These values were used to compute omni-directional damage coefficients suitable for solar cells protected by coverglasses of practical thickness, which in turn were used to compute solar cell degradation in two proton-dominated orbits. In spite of the difference in the low energy proton damage coefficients, the difference between the handbook prediction and the prediction using the newly derived values was negligible. Damage coefficients for GaAs solar cells for short circuit current, open circuit voltage, and maximum power were also computed relative to 10 MeV protons. They were used to predict cell degradation in the same two orbits and in a 5600 nmi orbit. Results show the performance of the GaAs solar cells in these orbits to be superior to that of the Si cells.

Radiation damage prediction system using damage function

International Nuclear Information System (INIS)

Tanaka, Yoshihisa; Mori, Seiji

1979-01-01

The irradiation damage analysis system using a damage function was investigated. This irradiation damage analysis system consists of the following three processes, the unfolding of a damage function, the calculation of the neutron flux spectrum of the object of damage analysis and the estimation of irradiation effect of the object of damage analysis. The damage function is calculated by applying the SAND-2 code. The ANISN and DOT3, 5 codes are used to calculate neutron flux. The neutron radiation and the allowable time of reactor operation can be estimated based on these calculations of the damage function and neutron flux. The flow diagram of the process of analyzing irradiation damage by a damage function and the flow diagram of SAND-2 code are presented, and the analytical code for estimating damage, which is determined with a damage function and a neutron spectrum, is explained. The application of the irradiation damage analysis system using a damage function was carried out to the core support structure of a fast breeder reactor for the damage estimation and the uncertainty evaluation. The fundamental analytical conditions and the analytical model for this work are presented, then the irradiation data for SUS304, the initial estimated values of a damage function, the error analysis for a damage function and the analytical results are explained concerning the computation of a damage function for 10% total elongation. Concerning the damage estimation of FBR core support structure, the standard and lower limiting values of damage, the permissible neutron flux and the allowable years of reactor operation are presented and were evaluated. (Nakai, Y.)

Fundamental Technology Development for Radiation Damage in Nuclear Materials

International Nuclear Information System (INIS)

Kwon, Sang Chul; Kwon, J. H.; Kim, E. S. and others

2005-04-01

This project was performed to achieve technologies for the evaluation of radiation effects at materials irradiated at HANARO and nuclear power plants, to establish measurement equipment and software for the analysis of radiation defects and to set up facilities for the measurements of radiation damage with non-destructive methods. Major targets were 1) establishment of hot laboratories and remote handling facilities/ technologies for the radioactive material tests, 2) irradiation test for the simulation of nuclear power plant environment and measurement/calculation of physical radiation damage, 3) evaluation and analysis of nano-scale radiation damage, 4) evaluation of radiation embrittlement with ultrasonic resonance spectrum measurement and electromagnetic measurement and 5) basic research of radiation embrittlement and radiation damage mechanism. Through the performance of 3 years, preliminary basics were established for the application research to evaluation of irradiated materials of present nuclear power plants and GEN-IV systems. Particularly the results of SANS, PAS and TEM analyses were the first output in Korea. And computer simulations of radiation damage were tried for the first time in Korea. The technologies will be developed for the design of GEN-IV material

Investigations of p-type signal for ZnO thin films grown on (100)GaAs substrates by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Rogers, D.J. [Nanovation SARL, Orsay (France); Univ. de Technologie de Troyes, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Monteiro, T.; Soares, M.; Neves, A.; Carmo, M.; Correia, M.R. [Physics Dept., Univ. of Aveiro (Portugal); Pereira, S. [Physics Dept., Univ. of Aveiro (Portugal); Inst. Tecnologico e Nuclear, Sacavem (Portugal); Lusson, A. [Inst. d' Electronique Fondamentale, Orsay Univ. (France); LPSC - CNRS, Meudon (France); Alves, E.; Barradas, N.P. [Inst. Tecnologico e Nuclear, Sacavem (Portugal); Morrod, J.K.; Prior, K.A. [Physics Dept., Heriot Watt Univ., Edinburgh Scotland (United Kingdom); Kung, P.; Yasan, A.; Razeghi, M. [Center for Quantum Devices, Dept. of Electrical and Computer Engineering, Northwestern Univ., Evanston, IL (United States)

2006-03-15

In this work we investigated ZnO films grown on semi-insulating (100)GaAs substrates by pulsed laser deposition. Samples were studied using techniques including X-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy, Raman spectroscopy, temperature dependent photoluminescence, C-V profiling and temperature dependent Hall measurements. The Hall measurements showed a clear p-type response with a relatively high mobility ({proportional_to}260 cm{sup 2}/Vs) and a carrier concentration of {proportional_to}1.8 x 10{sup 19} cm{sup -3}. C-V profiling confirmed a p-type response. XRD and Raman spectroscopy indicated the presence of (0002) oriented wurtzite ZnO plus secondary phase(s) including (101) oriented Zn{sub 2}As{sub 2}O{sub 7}. The results suggest that significant atomic mixing was occurring at the film/substrate interface for films grown at substrate temperatures of 450 C (without post-annealing). (orig.)

Diodes based on semi-insulating CdTe crystals with Mo/MoO{sub x} contacts for X- and γ-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Maslyanchuk, O.; Kulchynsky, V.; Solovan, M. [Chernivtsi National University, Chernivtsi (Ukraine); Gnatyuk, V. [Institute of Semiconductor Physics, NAS of Ukraine, Kyiv (Ukraine); Potiriadis, C. [Greek Atomic Energy Commission, Attiki (Greece); Kaissas, I. [Greek Atomic Energy Commission, Attiki (Greece); Department of Electrical and Computer Engineering, Aristotle University of Thessaloniki (Greece); Brus, V. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2017-03-15

This paper reports on the possible applications of molybdenum oxide (Mo/MoO{sub x}) contacts in combination with semi-insulating CdTe crystals. The electrical contacts to p-type Cl-doped CdTe crystals were formed by the deposition of molybdenum oxide and pure molybdenum thin films by the DC reactive magnetron sputtering. Electrical properties of the prepared Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo surface-barrier structures were investigated at different temperatures. It is shown that the rapid growth of the reverse current with increasing bias voltage higher than 10 V is caused by the space-charge limited currents. Spectrometric properties of the Mo-MoO{sub x}/p-CdTe/MoO{sub x}-Mo structures have been also analyzed. It is revealed that the developed heterojunction has shown promising characteristics for its practical application in X- and γ-ray radiation detector fabrication. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Radiation exposure and chromosome damage

International Nuclear Information System (INIS)

Lloyd, D.

1979-01-01

Chromosome damage is discussed as a means of biologically measuring radiation exposure to the body. Human lymphocytes are commonly used for this test since the extent of chromosome damage induced is related to the exposure dose. Several hundred lymphocytes are analysed in metaphase for chromosome damage, particularly dicentrics. The dose estimate is made by comparing the observed dicentric yield against calibration curves, previously produced by in vitro irradiation of blood samples to known doses of different types of radiation. This test is useful when there is doubt that the film badge has recorded a reasonable whole body dose and also when there is an absence of any physical data. A case of deliberate exposure is described where the chromosome damage test estimated an exposure of 152 rads. The life span of cell aberrations is also considered. Regular checks on radiotherapy patients and some accidental overdose cases have shown little reduction in the aberration levels over the first six weeks after which the damage disappears slowly with a half-life of about three years. In conclusion, chromosome studies have been shown to be of value in resolving practical problems in radiological protection. (U.K.)

Needle-Bonded Electromagnetic Shielding Thermally Insulating Nonwoven Composite Boards: Property Evaluations

Directory of Open Access Journals (Sweden)

Jia-Horng Lin

2016-10-01

Full Text Available Complicated environmental problems inevitably arise when technology advances. One major environmental problem is the presence of electromagnetic radiation. Long-term exposure to electromagnetic radiation can damage people’s health in many ways. Therefore, this study proposes producing composite boards with electromagnetic shielding effectiveness and thermal insulation by utilizing the structures and properties of materials. Different combinations of flame-retardant polyester fiber (FR fiber, recycled far-infrared polyester fiber (FI fiber, and 4D low-melting-point fibers (LM fiber were made into flame-retardant and thermally insulating matrices. The matrices and carbon fiber (CF woven fabric in a sandwich-structure were needle-punched in order to be tightly compact, and then circularly heat dried in order to have a heat set and reinforced structure. The test results indicate that Polyester (PET/CF composite boards are mechanically strong and have thermal insulation and electromagnetic shielding effectiveness at a frequency between 0.6 MHz and 3 GHz.

Metamict state radiation damage in crystalline materials

International Nuclear Information System (INIS)

Haaker, R.F.; Ewing, R.C.

1979-01-01

Metamict minerals provide an excellent basis for the evaluation of long-term radiation damage effects, particularly such changes in physical and chemical properties as microfracturing, hydrothermal alteration, and solubility. This paper summarizes pertinent literature on metamictization and proposes experiments that are critical to the elucidation of structural controls on radiation damage in crystalline phases

Electronic-excitation induced radiation damage in glasses

Energy Technology Data Exchange (ETDEWEB)

Vigouroux, J P

1985-01-01

In order to understand the microscopic nature of radiation induced defects in insulators, we have studied localization of negative and positive charges in amorphous and monocrystalline SiO2. The behaviour of these charges is linked to creation of point defects by electronic excitation. The role of intense electric fields under irradiation is pointed out.

Radiation damage and its repair in non-sporulating bacteria

International Nuclear Information System (INIS)

Moseley, B.E.B.

1984-01-01

A review is given of radiation damage and its repair in non-sporulating bacteria. The identification and measurement of radiation damage in the DNA of the bacteria after exposure to ultraviolet radiation and ionizing radiation is described. Measuring the extent of DNA repair and ways of isolating repair mutants are also described. The DNA repair mechanisms for UV-induced damage are discussed including photoreactivation repair, excision repair, post-replication recombination repair and induced error-prone repair. The DNA repair mechanisms for ionizing radiation damage are also discussed including the repair of both single and double-strand breaks. Other aspects discussed include the effects of growth, irradiation medium and recovery medium on survival, DNA repair in humans, the commercial use of UV and ionizing radiations and the future of ionizing irradiation as a food treatment process. (U.K.)

Radiation damage for the spallation target of ADS

International Nuclear Information System (INIS)

Fan Sheng; Ye Yanlin; Xu Chuncheng; Chen Tao; Sobolevsky, N.M.

2000-01-01

By using SHIELD codes system, the authors investigate the radiation damage, such as radiation damage cross section, displacement atom cross section and the rate of displacement atom, gas production cross section, the rate of gas production and the ratio, R, of the helium and displacement production rates in target, container window and spallation neutron source materials as W and Pb induced from intermediate energy proton and neutron incident. And the study of radiation damage in the thick Pb target with long 60 cm, radius 20 cm is presented

Radiation damage in plastic scintillators

International Nuclear Information System (INIS)

Majewski, S.

1990-01-01

Results of radiation damage studies in plastic scintillators are reviewed and critically analyzed from the point of view of applications of plastic scintillators in calorimetric detectors for the SSC. Damage to transmission and to fluorescent yield in different conditions is discussed. New directions in R ampersand D are outlined. Several examples are given of the most recent data on the new scintillating materials made with old and new plastics and fluors, which are exhibiting significantly improved radiation resistance. With a present rate of a vigorous R D programme, the survival limits in the vicinity of 100 MRad seem to be feasible within a couple of years

Collision density approach of radiation damage in a multispecies medium

International Nuclear Information System (INIS)

Lux, I.; Pazsit, I.

1981-01-01

Space-energy dependent forward type equations for the collision densities of energetic atoms in a multispecies semi-infinite homogeneous medium are formulated. Introduction of the one-dimensional isotropic forward-backward model of Fermi for the scattering and application of the Laplace transform with respect to the lethargy variable will lead to a linear differential equation system with constant coefficients. This equation system is solved for an arbitrary number of species and relations between the collision densities and defect distributions of the different species are given in the Kinchin-Pease model of radiation damage. The case of an alien particle incident on a two-component target is examined in some detail and the sputtering spectra for the three species are given numerically. (author)

Collision density approach of radiation damage in a multispecies medium

Energy Technology Data Exchange (ETDEWEB)

Lux, I; Pazsit, I [Koezponti Elelmiszeripari Kutato Intezet, Budapest (Hungary)

1981-01-01

Space-energy dependent forward type equations for the collision densities of energetic atoms in a multispecies semi-infinite homogeneous medium are formulated. Introduction of the one-dimensional isotropic forward-backward model of Fermi for the scattering and application of the Laplace transform with respect to the lethargy variable will lead to a linear differential equation system with constant coefficients. This equation system is solved for an arbitrary number of species and relations between the collision densities and defect distributions of the different species are given in the Kinchin-Pease model of radiation damage. The case of an alien particle incident on a two-component target is examined in some detail and the sputtering spectra for the three species are given numerically.

Substrate and Mg doping effects in GaAs nanowires

Directory of Open Access Journals (Sweden)

Perumal Kannappan

2017-10-01

Full Text Available Mg doping of GaAs nanowires has been established as a viable alternative to Be doping in order to achieve p-type electrical conductivity. Although reports on the optical properties are available, few reports exist about the physical properties of intermediate-to-high Mg doping in GaAs nanowires grown by molecular beam epitaxy (MBE on GaAs(111B and Si(111 substrates. In this work, we address this topic and present further understanding on the fundamental aspects. As the Mg doping was increased, structural and optical investigations revealed: i a lower influence of the polytypic nature of the GaAs nanowires on their electronic structure; ii a considerable reduction of the density of vertical nanowires, which is almost null for growth on Si(111; iii the occurrence of a higher WZ phase fraction, in particular for growth on Si(111; iv an increase of the activation energy to release the less bound carrier in the radiative state from nanowires grown on GaAs(111B; and v a higher influence of defects on the activation of nonradiative de-excitation channels in the case of nanowires only grown on Si(111. Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 1016 cm−3 to 1.4 × 1017 cm−3. The estimated electrical mobility was in the range ≈0.3–39 cm2/Vs and the dominant scattering mechanism is ascribed to the WZ/ZB interfaces. Electrical and optical measurements showed a lower influence of the polytypic structure of the nanowires on their electronic structure. The involvement of Mg in one of the radiative transitions observed for growth on the Si(111 substrate is suggested.

[Mechanisms of electromagnetic radiation damaging male reproduction].

Science.gov (United States)

Xue, Lei; Chen, Hao-Yu; Wang, Shui-Ming

2012-08-01

More and more evidence from over 50 years of researches on the effects of electromagnetic radiation on male reproduction show that a certain dose of electromagnetic radiation obviously damages male reproduction, particularly the structure and function of spermatogenic cells. The mechanisms of the injury may be associated with energy dysmetabolism, lipid peroxidation, abnormal expressions of apoptosis-related genes and proteins, and DNA damage.

Radiation induced apoptosis and initial DNA damage are inversely related in locally advanced breast cancer patients

International Nuclear Information System (INIS)

Pinar, Beatriz; Henríquez-Hernández, Luis Alberto; Lara, Pedro C; Bordon, Elisa; Rodriguez-Gallego, Carlos; Lloret, Marta; Nuñez, Maria Isabel; De Almodovar, Mariano Ruiz

2010-01-01

DNA-damage assays, quantifying the initial number of DNA double-strand breaks induced by radiation, have been proposed as a predictive test for radiation-induced toxicity. Determination of radiation-induced apoptosis in peripheral blood lymphocytes by flow cytometry analysis has also been proposed as an approach for predicting normal tissue responses following radiotherapy. The aim of the present study was to explore the association between initial DNA damage, estimated by the number of double-strand breaks induced by a given radiation dose, and the radio-induced apoptosis rates observed. Peripheral blood lymphocytes were taken from 26 consecutive patients with locally advanced breast carcinoma. Radiosensitivity of lymphocytes was quantified as the initial number of DNA double-strand breaks induced per Gy and per DNA unit (200 Mbp). Radio-induced apoptosis at 1, 2 and 8 Gy was measured by flow cytometry using annexin V/propidium iodide. Radiation-induced apoptosis increased in order to radiation dose and data fitted to a semi logarithmic mathematical model. A positive correlation was found among radio-induced apoptosis values at different radiation doses: 1, 2 and 8 Gy (p < 0.0001 in all cases). Mean DSB/Gy/DNA unit obtained was 1.70 ± 0.83 (range 0.63-4.08; median, 1.46). A statistically significant inverse correlation was found between initial damage to DNA and radio-induced apoptosis at 1 Gy (p = 0.034). A trend toward 2 Gy (p = 0.057) and 8 Gy (p = 0.067) was observed after 24 hours of incubation. An inverse association was observed for the first time between these variables, both considered as predictive factors to radiation toxicity

Microinhomogeneities in Semi-Insulating Cd(Zn)Te

International Nuclear Information System (INIS)

Fochuk, P.; Nykoniuk, Y.; Zakharuk, Z.; Kopach, O.; Kovalenko, N.

2017-01-01

Here, we investigated the temperature dependences (TDs) in the range of 290-423 K for the Hall constant R H and the Hall carrier mobility μn (σ R H ) in semi-insulating Cd 0.9 Zn 0.1 Te:In (CZT) crystals. As-grown, CZT material has nonequilibrium distributions of native and impurity-related defects. Thus, before taking any measurements, the samples were kept inside the test chamber in the dark at 423 K to reach an equilibrium state at T <; 423 K. For all the tested samples, the R H TD could be described by two activation energies. At the transitional point, the TD of the carrier mobility also changes from “normal” at high temperatures to “exponential” at low temperatures. The latter is a result of the collective effect of drift barriers due to microinhomogeneity. Therefore, only the high-temperature activation energies can be assigned to the ionization energies of the compensated deep donors (ε D ). For different samples, the values for ε D 0 (at absolute zero) were found to be in the range of 0.50-0.78 eV, and the degree of donor compensation [D + ]/[D] is between 0.3 and 0.98. The low-temperature region, where there are strong effects of crystal microinhomogeneities, cannot be used to characterize the ionization energy of donors. Therefore, we describe the activation energy as ε 1 = ε D - αε b , where ε b is the drift barrier height found from the TD of the carrier mobility and α takes a value close to unity. Values of ε b for our studied samples lie within (0.05-0.35) eV.

Effects of ionizing radiation of electrical properites of refractory insulators

International Nuclear Information System (INIS)

van Lint, V.A.J.; Bunch, J.M.

1975-01-01

The Los Alamos Reference Theta Pinch Reactor (RTPR) requires on the first wall an electrical insulator which will withstand transient high voltage at high temperature 10 sec after severe neutron and ionizing irradiation. Few measurements of electrical parameters for heavily disordered refractory insulators have been reported; estimates are made as to whether breakdown strength or conductivity will be degraded by the irradiation. The approach treats separately short-term ionization effects (free and trapped electrons and holes) and long-term gross damage effects (transmutation products and various lattice defects). The following processes could produce unacceptable conduction across the first wall insulator: (a) delayed electronic conductivity 10 sec after the prompt ionization by bremsstrahlung; (b) prompt electronic conductivity from delayed ionization; (c) electronic breakdown; (d) electronic or ionic conductivity due to thermal motion in the disordered material, possibly leading to thermal breakdown. Worst-case calculations based on lower limits to recombination coefficients limit process (a) to sigma much less than 5 x 10 -14 mho/cm. Data on ionization-induced conductivity in insulators predict for process (b) sigma much less than 10 -8 mho/cm. Electronic breakdown generally occurs at fields well above the 10 5 V/cm required for RTPR. Thermal breakdown is negligible due to the short voltage pulse. Ionic and electronic conduction must be studied theoretically and experimentally in the type of highly disordered materials that result from neutron irradiation of the first wall

Radiation cross-linking of small electrical wire insulator fabricated from NR/LDPE blends

Energy Technology Data Exchange (ETDEWEB)

Siri-Upathum, Chyagrit [Department of Nuclear Technology, Faculty of Engineering Chulalongkorn University, Bangkok 10330 (Thailand)], E-mail: chyagrit@chula.ac.th; Punnachaiya, Suvit [Department of Nuclear Technology, Faculty of Engineering Chulalongkorn University, Bangkok 10330 (Thailand)

2007-12-15

A low voltage, radiation-crosslinked wire insulator has been fabricated from blends of natural rubber block (STR-5L) and LDPE with phthalic anhydride (PA) as a compatibilizer. Physical properties of the NR/LDPE blend ratios of 50/50 and 60/40 with 0.5, 1.0, and 1.5 wt% PA were evaluated. The gel content increased as the radiation dose increased. Tensile at break exhibited a maximum value of 12 MPa at 120 kGy for 1.0 and 1.5 wt% PA of both blend ratios. A higher PA content yielded a higher modulus for the same blend ratio. Blends of 60/40 ratio with 1.0 wt% PA and 0.8 wt% antimony oxide flame retardant gave the highest limiting oxygen index (LOI) of >30% at above 150 kGy. Other electrical properties of the wire insulator were investigated. It was found that an insulator fabricated from a PA content of 1.0 wt% in the NR/LDPE blend ratio of 50/50, after gamma ray cross-linked at a dose of 180 kGy in low vacuum (1 mm Hg), met the Thai Industrial Standard 11-2531 for low voltage wire below 1.0 kV. To comply with the standard for vertical flame test, a more suitable flame retardant was needed for the insulator.

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Study on DNA damages induced by UV radiation

International Nuclear Information System (INIS)

Doan Hong Van; Dinh Ba Tuan; Tran Tuan Anh; Nguyen Thuy Ngan; Ta Bich Thuan; Vo Thi Thuong Lan; Tran Minh Quynh; Nguyen Thi Thom

2015-01-01

DNA damages in Escherichia coli (E. coli) exposed to UV radiation have been investigated. After 30 min of exposure to UV radiation of 5 mJ/cm"2, the growth of E. coli in LB broth medium was about only 10% in compared with non-irradiated one. This results suggested that the UV radiation caused the damages for E. coli genome resulted in reduction in its growth and survival, and those lesions can be somewhat recovered. For both solutions of plasmid DNAs and E. coli cells containing plasmid DNA, this dose also caused the breakage on single and double strands of DNA, shifted the morphology of DNA plasmid from supercoiled to circular and linear forms. The formation of pyrimidine dimers upon UV radiation significantly reduced when the DNA was irradiated in the presence of Ganoderma lucidum extract. Thus, studies on UV-induced DNA damage at molecular level are very essential to determine the UV radiation doses corresponding to the DNA damages, especially for creation and selection of useful radiation-induced mutants, as well as elucidation the protective effects of the specific compounds against UV light. (author)

High LET radiation and mechanism of DNA damage repair

International Nuclear Information System (INIS)

Furusawa, Yoshiya

2004-01-01

Clarifying the mechanism of repair from radiation damage gives most important information on radiation effects on cells. Approximately 10% of biological experiments groups in Heavy Ion Medical Accelerator in Chiba (HIMAC) cooperative research group has performed the subject. They gave a lot of new findings on the mechanism, and solved some open questions. The reason to show the peak of relative biological effectiveness RBE at around 100-200 keV/μm causes miss-repair of DNA damage. Sub-lethal damage generated by high linear energy transfer (LET) radiation can be repaired fully. Potentially lethal damages by high-LET radiation also repaired, but the efficiency decreased with the LET, and so on. (author)

Molecular mechanisms in radiation damage to DNA: Final report

International Nuclear Information System (INIS)

Osman, R.

1996-01-01

The objectives of this work were to elucidate the molecular mechanisms that were responsible for radiation-induced DNA damage. The studies were based on theoretical explorations of possible mechanisms that link initial radiation damage in the form of base and sugar damage to conformational changes in DNA

Radiation induced genetic damage in Aspergillus nidulans

International Nuclear Information System (INIS)

Georgiou, J.T.

1984-01-01

The mechanism by which ionizing radiation induces genetic damage in haploid and diploid conidia of Aspergillus nidulans was investigated. Although the linear dose-response curves obtained following low LET irradiation implied a 'single-hit' action of radiation, high LET radiations were much more efficient than low LET radiations, which suggests the involvement of a multiple target system. It was found that the RBE values for non-disjunction and mitotic crossing-over were very different. Unlike mitotic crossing-over, the RBE values for non-disjunction were much greater than for cell killing. This suggests that non-disjunction is a particularly sensitive genetical endpoint that is brought about by damage to a small, probably non-DNA target. Radiosensitisers were used to study whether radiation acts at the level of the DNA or some other cellular component. The sensitisation to electrons and/or X-rays by oxygen, and two nitroimidazoles (metronidazole and misonidazole) was examined for radiation induced non-disjunction, mitotic crossing-over, gene conversion, point mutation and cell killing. It was found that these compounds sensitised the cells considerably more to genetic damage than to cell killing. (author)

Radiation hardness of superconducting magnet insulation materials for FAIR

International Nuclear Information System (INIS)

Seidl, Tim

2013-03-01

This thesis focuses on radiation degradation studies of polyimide, polyepoxy/glass-fiber composites and other technical components used, for example, in the superconducting magnets of new ion accelerators such as the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz Center of Heavy Ion Research (GSI) in Darmstadt. As accelerators are becoming more powerful, i.e., providing larger energies and beam intensities, the potential risk of radiation damage to the components increases. Reliable data of the radiation hardness of accelerator materials and components concerning electrical, thermal and other technical relevant properties are of great interest also for other facilities such as the Large Hadron Collider (LHC) of CERN. Dependent on the position of the different components, induced radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles. Although the number of heavy fragments of the initial projectiles is small compared to neutrons, protons, or light fragments (e.g. ? particles), their large energy deposition can induce extensive damage at rather low fluences (dose calculations show that the contribution of heavy ions to the total accumulated dose can reach 80 %). For this reason, defined radiation experiments were conducted using different energetic ion beams (from protons to uranium) and gamma radiation from a Co-60 source. The induced changes were analyzed by means of in-situ and ex-situ analytical methods, e.g. ultraviolet-visible and infrared spectroscopy, residual gas analysis, thermal gravimetric analysis, dielectric strength measurements, measurements of low temperature thermal properties, and performance tests. In all cases, the radiation induces a change in molecular structure as well as loss of functional material properties. The amount of radiation damage is found to be sensitive to the used type of ionizing radiation and the long term stability of the materials is

Radiation damage monitoring in the ATLAS pixel detector

International Nuclear Information System (INIS)

Seidel, Sally

2013-01-01

We describe the implementation of radiation damage monitoring using measurement of leakage current in the ATLAS silicon pixel sensors. The dependence of the leakage current upon the integrated luminosity is presented. The measurement of the radiation damage corresponding to an integrated luminosity 5.6 fb −1 is presented along with a comparison to a model. -- Highlights: ► Radiation damage monitoring via silicon leakage current is implemented in the ATLAS (LHC) pixel detector. ► Leakage currents measured are consistent with the Hamburg/Dortmund model. ► This information can be used to validate the ATLAS simulation model.

Mechanisms for radiation damage in DNA

International Nuclear Information System (INIS)

Sevilla, M.D.

1985-07-01

Radiation damage to DNA results from the direct interaction of radiation with DNA where positive ions, electrons and excited states are formed in the DNA, and the indirect effect where radical species formed in the surrounding medium by the radiation attack the DNA. The primary mechanism proposed for radiation damage, by the direct effect, is that positive and negative ions formed within the DNA strand migrate through the stacked DNA bases. The ions can then recombine, react with the DNA bases most likely to react by protonation of the anion and deprotonation or hydroxylation of the cation or transfer out of the DNA chain to the surrounding histone protein. This work as aimed at understanding the possible reactions of the DNA base ion radicals, as well as their initial distribution in the DNA strand. 31 refs

Wall insulation system

Energy Technology Data Exchange (ETDEWEB)

Kostek, P.T.

1987-08-11

In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

Radiation damage of structural materials

International Nuclear Information System (INIS)

Koutsky, J.; Kocik, J.

1994-01-01

Maintaining the integrity of nuclear power plants (NPP) is critical in the prevention or control of severe accidents. This monograph deals with both basic groups of structural materials used in the design of light-water nuclear reactors, making the primary safety barriers of NPPs. Emphasis is placed on materials used in VVER-type nuclear reactors: Cr-Mo-V and Cr-Ni-Mo-V steel for reactor pressure vessels (RPV) and Zr-Nb alloys for fuel element cladding. The book is divided into seven main chapters, with the exception of the opening one and the chapter providing phenomenological background for the subject of radiation damage. Chapters 3-6 are devoted to RPV steels and chapters 7-9 to zirconium alloys, analyzing their radiation damage structure, changes of mechanical properties due to neutron irradiation as well as factors influencing the degree of their performance degradation. The recovery of damaged materials is also discussed. Considerable attention is paid to a comparison of VVER-type and western-type light-water materials

Constructive and critical approach of the radiation damage simulation

International Nuclear Information System (INIS)

Becquart, Ch.

2002-11-01

This work deals with the problem of radiation damage in materials for applications in development of fission and nuclear fusion technologies. It is organised in 3 sections. In section 1 are presented the mechanisms of formation and the evolution kinetics of the primary damage. Section 2 is devoted to the study of the sensitivity of the radiation damage at different approximations. Section 3 discusses the contribution of the ab initio calculations to the study of radiation damage and more particularly the point defects in a dilute Fe-Cu ferritic alloy. This work is illustrated by several publications added in each section. (O.M.)

REC-2006-A Fractionated Extract of Podophyllum hexandrum Protects Cellular DNA from Radiation-Induced Damage by Reducing the Initial Damage and Enhancing Its Repair In Vivo.

Science.gov (United States)

Chaudhary, Pankaj; Shukla, Sandeep Kumar; Sharma, Rakesh Kumar

2011-01-01

Podophyllum hexandrum, a perennial herb commonly known as the Himalayan May Apple, is well known in Indian and Chinese traditional systems of medicine. P. hexandrum has been widely used for the treatment of venereal warts, skin infections, bacterial and viral infections, and different cancers of the brain, lung and bladder. This study aimed at elucidating the effect of REC-2006, a bioactive fractionated extract from the rhizome of P. hexandrum, on the kinetics of induction and repair of radiation-induced DNA damage in murine thymocytes in vivo. We evaluated its effect on non-specific radiation-induced DNA damage by the alkaline halo assay in terms of relative nuclear spreading factor (RNSF) and gene-specific radiation-induced DNA damage via semi-quantitative polymerase chain reaction. Whole body exposure of animals with gamma rays (10 Gy) caused a significant amount of DNA damage in thymocytes (RNSF values 17.7 ± 0.47, 12.96 ± 1.64 and 3.3 ± 0.014) and a reduction in the amplification of β-globin gene to 0, 28 and 43% at 0, 15 and 60 min, respectively. Administrating REC-2006 at a radioprotective concentration (15 mg kg(-1) body weight) 1 h before irradiation resulted in time-dependent reduction of DNA damage evident as a decrease in RNSF values 6.156 ± 0.576, 1.647 ± 0.534 and 0.496 ± 0.012, and an increase in β-globin gene amplification 36, 95 and 99%, at 0, 15 and 60 min, respectively. REC-2006 scavenged radiation-induced hydroxyl radicals in a dose-dependent manner stabilized DPPH free radicals and also inhibited superoxide anions. Various polyphenols and flavonoides present in REC-2006 might contribute to scavenging of radiation-induced free radicals, thereby preventing DNA damage and stimulating its repair.

Tooth-germ damage by ionizing radiation

International Nuclear Information System (INIS)

Sobkowiak, E.M.; Beetke, E.; Bienengraeber, V.; Held, M.; Kittner, K.H.

1977-01-01

Experiments on animals (four-week-old dogs) were conducted in an investigation made to study the possibility of dose-dependent tooth-germ damage produced by ionizing radiation. The individual doses were 50 R and 200 R, respectively, and they were administered once to three times at weekly intervals. Hyperemia and edemata could be observed on tooth-germ pulps from 150 R onward. Both of these conditions became more acute as the radiation dose increased (from 150 R to 600 R). Possible damage to both the dentin and enamel is pointed out. (author)

Radiation damage to DNA: the effect of LET

Energy Technology Data Exchange (ETDEWEB)

Ward, J F; Milligan, J R [California Univ., San Diego, La Jolla, CA (United States). School of Medicine

1997-03-01

Mechanisms whereby ionizing radiation induced damage are introduced into cellular DNA are discussed. The types of lesions induced are summarized and the rationale is presented which supports the statement that radiation induced singly damaged sites are biologically unimportant. The conclusion that multiply damaged sites are critical is discussed and the mechanisms whereby such lesions are formed are presented. Structures of multiply damaged sites are summarized and problems which they present to cellular repair systems are discussed. Lastly the effects of linear energy transfer on the complexity of multiply damaged sites are surveyed and the consequences of this increased complexity are considered in terms of cell survival and mutation. (author)

Radiation damage analysis by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Siegel, R.W.

1979-01-01

The application of positron annihilation spectroscopy (PAS) to the characterization and study of defects in metals produced by radiation damage is discussed. The physical basis for the positron annihilation techniques (lifetime, Doppler broadening, angular correlation) is introduced and the techniques briefly described. Some examples of the application of PAS to radiation damage analysis are presented with a view toward elucidating the particular advantages of PAS over more traditional defect characterization techniques

DNA Damage Signals and Space Radiation Risk

Science.gov (United States)

Cucinotta, Francis A.

2011-01-01

Space radiation is comprised of high-energy and charge (HZE) nuclei and protons. The initial DNA damage from HZE nuclei is qualitatively different from X-rays or gamma rays due to the clustering of damage sites which increases their complexity. Clustering of DNA damage occurs on several scales. First there is clustering of single strand breaks (SSB), double strand breaks (DSB), and base damage within a few to several hundred base pairs (bp). A second form of damage clustering occurs on the scale of a few kbp where several DSB?s may be induced by single HZE nuclei. These forms of damage clusters do not occur at low to moderate doses of X-rays or gamma rays thus presenting new challenges to DNA repair systems. We review current knowledge of differences that occur in DNA repair pathways for different types of radiation and possible relationships to mutations, chromosomal aberrations and cancer risks.

Thermal annealing of natural, radiation-damaged pyrochlore

Energy Technology Data Exchange (ETDEWEB)

Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

2017-03-01

Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

Pathology of radiation induced lung damage

International Nuclear Information System (INIS)

Kawabata, Yoshinori; Murata, Yoshihiko; Ogata, Hideo; Katagiri, Shiro; Sugita, Hironobu; Iwai, Kazuo; Sakurai, Isamu.

1985-01-01

We examined pathological findings of radiation induced lung damage. Twenty-three cases are chosen from our hospital autopsy cases for 9 years, which fulfil strict criteria of radiation lung damage. Lung damage could be classified into 3 groups : 1) interstitial pneumonia type (9 cases), 2) intermediate pneumonia type (8 cases), and 3) alveolar pneumonia type (6 cases), according to the degree of intra-luminal exudation. These classification is well correlated with clinical findings. Pathological alveolar pneumonia type corresponds to symptomatic, radiologic ground glass pneumonic shadow. And pathologic interstitial type corresponds to clinical asymptomatic, radiologic reticulo-nodular shadow. From the clinico-pathological view point these classification is reasonable one. Radiation affects many lung structures and showed characteristic feature of repair. Elastofibrosis of the alveolar wall is observed in every cases, obstructive bronchiolitis are observed in 5 cases, and obstructive bronchiolitis in 9 cases. They are remarkable additional findings. Thickening of the interlobular septum, broncho-vascular connective tissue, and pleural layer are observed in every cases together with vascular lesions. (author)

Acoustic emission sensor radiation damage threshold experiment

International Nuclear Information System (INIS)

Beeson, K.M.; Pepper, C.E.

1994-01-01

Determination of the threshold for damage to acoustic emission sensors exposed to radiation is important in their application to leak detection in radioactive waste transport and storage. Proper response to system leaks is necessary to ensure the safe operation of these systems. A radiation impaired sensor could provide ''false negative or false positive'' indication of acoustic signals from leaks within the system. Research was carried out in the Radiochemical Technology Division at Oak Ridge National Laboratory to determine the beta/gamma radiation damage threshold for acoustic emission sensor systems. The individual system consisted of an acoustic sensor mounted with a two part epoxy onto a stainless steel waveguide. The systems were placed in an irradiation fixture and exposed to a Cobalt-60 source. After each irradiation, the sensors were recalibrated by Physical Acoustics Corporation. The results were compared to the initial calibrations performed prior to irradiation and a control group, not exposed to radiation, was used to validate the results. This experiment determines the radiation damage threshold of each acoustic sensor system and verifies its life expectancy, usefulness and reliability for many applications in radioactive environments

Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

Science.gov (United States)

Tian, Liqiang; Shi, Wei; Feng, Qingqing

2011-11-01

A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

International Nuclear Information System (INIS)

Hiemstra, D.

1996-03-01

The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

Space and military radiation effects in silicon-on-insulator devices

International Nuclear Information System (INIS)

Schwank, J.R.

1996-09-01

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

Report of the APS summer study on physics problems relating to energy technologies: radiation effects on materials

International Nuclear Information System (INIS)

Vook, F.L.; Birnbaum, H.K.; Blewitt, T.H.

1974-06-01

The status of research and development programs related to radiation effects on materials is reviewed. Information is included on point defects in metals, dislocations, radiation damage, simulation of neutron damage, H and He in metals, insulators, semiconductors, and superconductors. (U.S.)

Imperfection and radiation damage in protein crystals studied with coherent radiation

Energy Technology Data Exchange (ETDEWEB)

Nave, Colin, E-mail: colin.nave@diamond.ac.uk [Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Sutton, Geoff [Wellcome Trust Centre for Human Genetics, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Evans, Gwyndaf; Owen, Robin; Rau, Christoph [Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom); Robinson, Ian [University College London, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Stuart, David Ian [Wellcome Trust Centre for Human Genetics, Roosevelt Drive, Oxford OX3 7BN (United Kingdom); Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot OX11 0DE (United Kingdom)

2016-01-01

Coherent diffraction observations from polyhedra crystals at cryotemperature are reported. Information is obtained about the lattice strain and the changes with radiation damage. Fringes and speckles occur within diffraction spots when a crystal is illuminated with coherent radiation during X-ray diffraction. The additional information in these features provides insight into the imperfections in the crystal at the sub-micrometre scale. In addition, these features can provide more accurate intensity measurements (e.g. by model-based profile fitting), detwinning (by distinguishing the various components), phasing (by exploiting sampling of the molecular transform) and refinement (by distinguishing regions with different unit-cell parameters). In order to exploit these potential benefits, the features due to coherent diffraction have to be recorded and any change due to radiation damage properly modelled. Initial results from recording coherent diffraction at cryotemperatures from polyhedrin crystals of approximately 2 µm in size are described. These measurements allowed information about the type of crystal imperfections to be obtained at the sub-micrometre level, together with the changes due to radiation damage.

Imperfection and radiation damage in protein crystals studied with coherent radiation

International Nuclear Information System (INIS)

Nave, Colin; Sutton, Geoff; Evans, Gwyndaf; Owen, Robin; Rau, Christoph; Robinson, Ian; Stuart, David Ian

2016-01-01

Coherent diffraction observations from polyhedra crystals at cryotemperature are reported. Information is obtained about the lattice strain and the changes with radiation damage. Fringes and speckles occur within diffraction spots when a crystal is illuminated with coherent radiation during X-ray diffraction. The additional information in these features provides insight into the imperfections in the crystal at the sub-micrometre scale. In addition, these features can provide more accurate intensity measurements (e.g. by model-based profile fitting), detwinning (by distinguishing the various components), phasing (by exploiting sampling of the molecular transform) and refinement (by distinguishing regions with different unit-cell parameters). In order to exploit these potential benefits, the features due to coherent diffraction have to be recorded and any change due to radiation damage properly modelled. Initial results from recording coherent diffraction at cryotemperatures from polyhedrin crystals of approximately 2 µm in size are described. These measurements allowed information about the type of crystal imperfections to be obtained at the sub-micrometre level, together with the changes due to radiation damage

Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Kamarou, A.

2006-11-07

The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at {approx}80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy.

Radiation effects and damage formation in semiconductors due to high-energy ion irradiation

International Nuclear Information System (INIS)

Kamarou, A.

2006-01-01

The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at ∼80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy

Radiation Damage Monitoring in the ATLAS Pixel Detector

CERN Document Server

Seidel, S

2013-01-01

We describe the implementation of radiation damage monitoring using measurement of leakage current in the ATLAS silicon pixel sensors. The dependence of the leakage current upon the integrated luminosity is presented. The measurement of the radiation damage corresponding to integrated luminosity 5.6 fb$^{-1}$ is presented along with a comparison to the theoretical model.

REC-2006—A Fractionated Extract of Podophyllum hexandrum Protects Cellular DNA from Radiation-Induced Damage by Reducing the Initial Damage and Enhancing Its Repair In Vivo

Science.gov (United States)

Chaudhary, Pankaj; Shukla, Sandeep Kumar; Sharma, Rakesh Kumar

2011-01-01

Podophyllum hexandrum, a perennial herb commonly known as the Himalayan May Apple, is well known in Indian and Chinese traditional systems of medicine. P. hexandrum has been widely used for the treatment of venereal warts, skin infections, bacterial and viral infections, and different cancers of the brain, lung and bladder. This study aimed at elucidating the effect of REC-2006, a bioactive fractionated extract from the rhizome of P. hexandrum, on the kinetics of induction and repair of radiation-induced DNA damage in murine thymocytes in vivo. We evaluated its effect on non-specific radiation-induced DNA damage by the alkaline halo assay in terms of relative nuclear spreading factor (RNSF) and gene-specific radiation-induced DNA damage via semi-quantitative polymerase chain reaction. Whole body exposure of animals with gamma rays (10 Gy) caused a significant amount of DNA damage in thymocytes (RNSF values 17.7 ± 0.47, 12.96 ± 1.64 and 3.3 ± 0.014) and a reduction in the amplification of β-globin gene to 0, 28 and 43% at 0, 15 and 60 min, respectively. Administrating REC-2006 at a radioprotective concentration (15 mg kg−1 body weight) 1 h before irradiation resulted in time-dependent reduction of DNA damage evident as a decrease in RNSF values 6.156 ± 0.576, 1.647 ± 0.534 and 0.496 ± 0.012, and an increase in β-globin gene amplification 36, 95 and 99%, at 0, 15 and 60 min, respectively. REC-2006 scavenged radiation-induced hydroxyl radicals in a dose-dependent manner stabilized DPPH free radicals and also inhibited superoxide anions. Various polyphenols and flavonoides present in REC-2006 might contribute to scavenging of radiation-induced free radicals, thereby preventing DNA damage and stimulating its repair. PMID:20008078

Effects of surface states on device and interconnect isolation in GaAs MESFET and InP MISFET integrated circuits

International Nuclear Information System (INIS)

Hasegawa, H.; Kitagawa, T.; Masuda, H.; Yano, H.; Ohno, H.

1985-01-01

Surface electrical breakdown and side-gating which cause failure of device and interconnect isolation are investigated for GaAs MESFET and InP MISFET integrated circuit structures. Striking differences in behavior are observed between GaAs and InP as regards to the surface conduction, surface breakdown and side-gating. These differences are shown to be related to the surface state properties of the insulator-semiconductor interface. In GaAs, high density of surface states rather than bulk trap states control the surface I-V characteristics and side-gating, causing serious premature avalanche breakdown and triggering side-gating at a low nominal field intensity of 1-3 kV/cm. On the other hand, InP MISFET integrated circuits are virtually free from these premature breakdown and side-gating effect under normal dark operating condition because of very low surface state density

Design and development of semi-automatic radiation test and calibration facility

International Nuclear Information System (INIS)

Yadav, Ashok Kumar; Chouhan, V.K.; Narayan, Pradeep

2008-01-01

Semi-automatic gamma radiation test and calibration facility have been designed, developed and commissioned at Defence Laboratory Jodhpur (DLJ). The facility comprises of medium and high dose rate range setup using 30 Ci Cobalt-60 source, in a portable remotely operated Techops camera and a 15000 Ci 60 Co source in a Tele-therapy machine. The radiation instruments can be positioned at any desired position using a computer controlled positioner having three translational and one rotational motion. User friendly software helps in positioning the Device Under Test (DUT) at any desired dose rate or distance and acquire the data automatically. The servo and stepper motor controlled positioner helps in achieving the required precision and accuracy for the radiation calibration of the instruments. This paper describes the semi-automatic radiation test and calibration facility commissioned at DLJ. (author)

Experimental studies on radiation damages of CsI(Tl) crystals

International Nuclear Information System (INIS)

He Jingtang; Mao Yufang; Dong Xiaoli; Chen Duanbao; Li Zuhao

1997-01-01

The results of experimental studies on radiation damage of CsI(Tl) crystal were reported. There are radiation damage effects on CsI(Tl) crystal. Experimental studies on recovery of damaged CsI(Tl) crystals were made. It seems that after heating at 200 degree C for 4 hours, the damaged crystals could be recovered completely

Molecular mechanisms in radiation damage to DNA. Progress report

International Nuclear Information System (INIS)

Osman, R.

1994-01-01

The objectives of this work are to elucidate the molecular mechanisms that are responsible for radiation-induced DNA damage. The overall goal is to understand the relationship between the chemical and structural changes produced by ionizing radiation in DNA and the resulting impairment of biological function expressed as carcinogenesis or cell death. The studies are based on theoretical explorations of possible mechanisms that link initial radiation damage in the form of base and sugar damage to conformational changes in DNA. These mechanistic explorations should lead to the formulation of testable hypotheses regarding the processes of impairment of regulation of gene expression, alteration in DNA repair, and damage to DNA structure involved in cell death or cancer

Radiation Damage and Dimensional Changes

International Nuclear Information System (INIS)

El-Barbary, A.A.; Lebda, H.I.; Kamel, M.A.

2009-01-01

The dimensional changes have been modeled in order to be accommodated in the reactor design. This study has major implications for the interpretation of damage in carbon based nuclear fission and fusion plant materials. Radiation damage of graphite leads to self-interstitials and vacancies defects. The aggregation of these defects causes dimensional changes. Vacancies aggregate into lines and disks which heal and contract the basal planes. Interstitials aggregate into interlayer disks which expand the dimension

Radiation damage of polymers in ultrasonic fields

Energy Technology Data Exchange (ETDEWEB)

Anbalagan, Poornnima

2008-07-01

Radiation damage has always been a topic of great interest in various fields of sciences. In this work, an attempt is made to probe into the effect of subthreshold ultrasonic waves on the radiation damage created by irradiation of deuterons in polymer samples wherein the polymer samples act as model systems. Two equal volumes of radiation damage were produced in a single polymer sample wherein a standing wave of ultrasound was introduced into one. Three polymers namely, Polycarbonate, Polymethylmethacrylate and Polyvinyl chloride were used in this work. Four independent techniques were used to analyze the irradiated samples and visualize the radiation damage. Interferometric measurements give a measure of the refractive index modulation in the irradiated sample. Polymers, being transparent, do not absorb in the visible region of the electromagnetic spectrum. UV-Vis absorption spectroscopy shows absorption peaks in the visible region in irradiated polymer samples. Ion irradiation causes coloration of polymers. The light microscope is used to measure the absorption of white light by the irradiated polymers. Positron annihilation spectroscopy is used to obtain a measure of the open volume created by irradiation in polymers. A comparison between the irradiated region and the region exposed to ultrasonic waves simultaneously with irradiation in a polymer sample shows the polymer specific influence of the ultrasonic standing wave. (orig.)

Radiation damage of polymers in ultrasonic fields

International Nuclear Information System (INIS)

Anbalagan, Poornnima

2008-01-01

Radiation damage has always been a topic of great interest in various fields of sciences. In this work, an attempt is made to probe into the effect of subthreshold ultrasonic waves on the radiation damage created by irradiation of deuterons in polymer samples wherein the polymer samples act as model systems. Two equal volumes of radiation damage were produced in a single polymer sample wherein a standing wave of ultrasound was introduced into one. Three polymers namely, Polycarbonate, Polymethylmethacrylate and Polyvinyl chloride were used in this work. Four independent techniques were used to analyze the irradiated samples and visualize the radiation damage. Interferometric measurements give a measure of the refractive index modulation in the irradiated sample. Polymers, being transparent, do not absorb in the visible region of the electromagnetic spectrum. UV-Vis absorption spectroscopy shows absorption peaks in the visible region in irradiated polymer samples. Ion irradiation causes coloration of polymers. The light microscope is used to measure the absorption of white light by the irradiated polymers. Positron annihilation spectroscopy is used to obtain a measure of the open volume created by irradiation in polymers. A comparison between the irradiated region and the region exposed to ultrasonic waves simultaneously with irradiation in a polymer sample shows the polymer specific influence of the ultrasonic standing wave. (orig.)

Raman study of radiation-damaged zircon under hydrostatic compression

Science.gov (United States)

Nasdala, Lutz; Miletich, Ronald; Ruschel, Katja; Váczi, Tamás

2008-12-01

Pressure-induced changes of Raman band parameters of four natural, gem-quality zircon samples with different degrees of self-irradiation damage, and synthetic ZrSiO4 without radiation damage, have been studied under hydrostatic compression in a diamond anvil cell up to ~10 GPa. Radiation-damaged zircon shows similar up-shifts of internal SiO4 stretching modes at elevated pressures as non-damaged ZrSiO4. Only minor changes of band-widths were observed in all cases. This makes it possible to estimate the degree of radiation damage from the width of the ν3(SiO4) band of zircon inclusions in situ, almost independent from potential “fossilized pressures” or compressive strain acting on the inclusions. An application is the non-destructive analysis of gemstones such as corundum or spinel: broadened Raman bands are a reliable indicator of self-irradiation damage in zircon inclusions, whose presence allows one to exclude artificial color enhancement by high-temperature treatment of the specimen.

DNA damage caused by ionizing radiation

International Nuclear Information System (INIS)

Sachs, R.K.; Peili Chen; Hahnfeldt, P.J.; Klatky, L.R.

1992-01-01

A survey is given of continuous-time Markov chain models for ionizing radiation damage to the genome of mammalian cells. In such models, immediate damage induced by the radiation is regarded as a batch-Poisson arrival process of DNA double-strand breaks (DSBs). Enzymatic modification of the immediate damage is modeled as a Markov process similar to those described by the master equation of stochastic chemical kinetics. An illustrative example is the restitution/complete-exchange model. The model postulates that, after being induced by radiation, DSBs subsequently either undergo enzymatically mediated restitution (repair) or participate pairwise in chromosome exchanges. Some of the exchanges make irremediable lesions such as dicentric chromosome aberrations. One may have rapid irradiation followed by enzymatic DSB processing or have prolonged irradiation with both DSB arrival and enzymatic DSB processing continuing throughout the irradiation period. Methods for analyzing the Markov chains include using an approximate model for expected values, the discrete-time Markov chain embedded at transitions, partial differential equations for generating functions, normal perturbation theory, singular perturbation theory with scaling, numerical computations, and certain matrix methods that combine Perron-Frobenius theory with variational estimates. Applications to experimental results on expected values, variances, and statistical distributions of DNA lesions are briefly outlined. Continuous-time Markov chains are the most systematic of those radiation damage models that treat DSB-DSB interactions within the cell nucleus as homogeneous (e.g., ignore diffusion limitations). They contain virtually all other relevant homogeneous models and semiempirical summaries as special cases, limiting cases, or approximations. However, the Markov models do not seem to be well suited for studying spatial dependence of DSB interactions. 51 refs., 5 figs

Radiation-induced normal tissue damage: implications for radiotherapy

International Nuclear Information System (INIS)

Prasanna, Pataje G.

2014-01-01

Radiotherapy is an important treatment modality for many malignancies, either alone or as a part of combined modality treatment. However, despite technological advances in physical treatment delivery, patients suffer adverse effects from radiation therapy due to normal tissue damage. These side effects may be acute, occurring during or within weeks after therapy, or intermediate to late, occurring months to years after therapy. Minimizing normal tissue damage from radiotherapy will allow enhancement of tumor killing and improve tumor control and patients quality of life. Understanding mechanisms through which radiation toxicity develops in normal tissue will facilitate the development of next generation radiation effect modulators. Translation of these agents to the clinic will also require an understanding of the impact of these protectors and mitigators on tumor radiation response. In addition, normal tissues vary in radiobiologically important ways, including organ sensitivity to radiation, cellular turnover rate, and differences in mechanisms of injury manifestation and damage response. Therefore, successful development of radiation modulators may require multiple approaches to address organ/site-specific needs. These may include treatments that modify cellular damage and death processes, inflammation, alteration of normal flora, wound healing, tissue regeneration and others, specifically to counter cancer site-specific adverse effects. Further, an understanding of mechanisms of normal tissue damage will allow development of predictive biomarkers; however harmonization of such assays is critical. This is a necessary step towards patient-specific treatment customization. Examples of important adverse effects of radiotherapy either alone or in conjunction with chemotherapy, and important limitations in the current approaches of using radioprotectors for improving therapeutic outcome will be highlighted. (author)

Measurement of radiation damage on an epoxy-based optical glue

International Nuclear Information System (INIS)

Huang, H.C.; Peng, K.C.; Sahu, S.K.; Ueno, K.; Chang, Y.H.; Wang, C.H.; Hou, W.S.

1997-01-01

We measured the radiation damage on an optical glue called Eccobond-24, which is a candidate for CsI and BGO crystal calorimeters of the BELLE detector of the KEK B-factory. Absorption spectrophotometry in the range 300-800 nm was used to monitor the radiation damage. The maximum equivalent dose was 1.64 Mrad. The glue shows effects of damage, but is acceptable for the radiation level in the above-mentioned experiment. (orig.)

Nucleation of point defects in low-fluence ion-implanted GaAs and GaP

International Nuclear Information System (INIS)

Wesch, W.; Wendler, E.; Gaertner, K.

1992-01-01

The defect production due to low-fluence medium-mass ion implantation into GaAs and GaP at room temperature is investigated. In the parameter region analysed weakly damaged layers are created containing point defects and point defects complexes. Temperature dependent channeling measurements show different structures of the damage produced in the two materials. The depth profiles of the near-edge optical absorption coefficient K sufficiently correspond to the profiles of the primarily produced vacancy concentration N vac . The absorption coefficient K(N vac ) determined from the depth profiles of the two magnitudes shows a square root dependence for GaAs, whereas for GaP a linear dependence is found. The differences observed are discussed in the frame of different nucleation mechanisms. (orig.)

Progress report on the neutral beam radiation hardening study

International Nuclear Information System (INIS)

Lee, J.D.; Condit, R.H.; Hoenig, C.L.; Wilcox, T.P.; Erickson, J.

1978-01-01

A neutral beam injector as presently conceived directly views the plasma it is sustaining. In turn the injector is exposed to the primary fusion neutrons plus secondary neutrons and gammas streaming back up the neutral beam duct. The intent of this work is to examine representative beam lines to see how performance and lifetimes could be affected by this radiation environment and to determine how unacceptable effects could be alleviated. Potential radiation induced problems addressed in this report have been limited to: (1) overheating of cryopanels and insulators, (2) gamma flux induced electrical conductivity increase of insulators, and (3) neutron and gamma fluence induced damage to insulator materials

Radiation damage studies of nuclear structural materials

International Nuclear Information System (INIS)

Barat, P.

2012-01-01

Maximum utilization of fuel in nuclear reactors is one of the important aspects for operating them economically. The main hindrance to achieve this higher burnups of nuclear fuel for the nuclear reactors is the possibility of the failure of the metallic core components during their operation. Thus, the study of the cause of the possibility of failure of these metallic structural materials of nuclear reactors during full power operation due to radiation damage, suffered inside the reactor core, is an important field of studies bearing the basic to industrial scientific views.The variation of the microstructure of the metallic core components of the nuclear reactors due to radiation damage causes enormous variation in the structure and mechanical properties. A firm understanding of this variation of the mechanical properties with the variation of microstructure will serve as a guide for creating new, more radiation-tolerant materials. In our centre we have irradiated structural materials of Indian nuclear reactors by charged particles from accelerator to generate radiation damage and studied the some aspects of the variation of microstructure by X-ray diffraction studies. Results achieved in this regards, will be presented. (author)

Implant damage and redistribution of indium in indium-implanted thin silicon-on-insulator

International Nuclear Information System (INIS)

Chen Peng; An Zhenghua; Zhu Ming; Fu, Ricky K.Y.; Chu, Paul K.; Montgomery, Neil; Biswas, Sukanta

2004-01-01

The indium implant damage and diffusion behavior in thin silicon-on-insulator (SOI) with a 200 nm top silicon layer were studied for different implantation energies and doses. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to characterize the implant damage before and after annealing. Secondary ion mass spectrometry (SIMS) was used to study the indium transient enhanced diffusion (TED) behavior in the top Si layer of the SOI structure. An anomalous redistribution of indium after relatively high energy (200 keV) and dose (1 x 10 14 cm -2 ) implantation was observed in both bulk Si and SOI substrates. However, there exist differences in these two substrates that are attributable to the more predominant out-diffusion of indium as well as the influence of the buried oxide layer in the SOI structure

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

Science.gov (United States)

Grendysa, J.; Tomaka, G.; Sliz, P.; Becker, C. R.; Trzyna, M.; Wojnarowska-Nowak, R.; Bobko, E.; Sheregii, E. M.

2017-12-01

Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdx Te are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdx Te layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.

Enhancement of radiation damage in germinating wheat seeds by hyperthermia

International Nuclear Information System (INIS)

Guo Fangqing; Gu Ruiqi

1994-01-01

Enhancement of X-ray induced radiation damage in germinating wheat seeds by heat treatment (44 degree C or 41 degree C, 20 min) has been investigated. The enhancement effect of heat treatment after irradiation was more significant than that of heat treatment before irradiation at dose range of 4.3-8.6 Gy. It was observed that germinating wheat seeds were very sensitive to heat treatment within 15 min after irradiation, which indicated that the repair of radiation damage was very active and rapid in a short period after irradiation. The repair of radiation damage in interval of fractionated irradiation was severely inhibited by heat treatment. The sensitivity of seeds to heat treatment corresponded with the levels of their repair activities. The more active the repairs of the seeds are, the more sensitive to heat treatment the seeds show. It was assumed that the enhancement of radiation damage by heat treatment in germinating wheat seeds was attributed to the inhibition of radiation damage repair by heat treatment, which is similar to the results of animal experiments

Tornadoes and related damage costs: statistical modelling with a semi-Markov approach

Directory of Open Access Journals (Sweden)

Guglielmo D’Amico

2016-09-01

Full Text Available We propose a statistical approach to modelling for predicting and simulating occurrences of tornadoes and accumulated cost distributions over a time interval. This is achieved by modelling the tornado intensity, measured with the Fujita scale, as a stochastic process. Since the Fujita scale divides tornado intensity into six states, it is possible to model the tornado intensity by using Markov and semi-Markov models. We demonstrate that the semi-Markov approach is able to reproduce the duration effect that is detected in tornado occurrence. The superiority of the semi-Markov model as compared to the Markov chain model is also affirmed by means of a statistical test of hypothesis. As an application, we compute the expected value and the variance of the costs generated by the tornadoes over a given time interval in a given area. The paper contributes to the literature by demonstrating that semi-Markov models represent an effective tool for physical analysis of tornadoes as well as for the estimation of the economic damages to human things.

Method of separate determination of high-ohmic sample resistance and contact resistance

Directory of Open Access Journals (Sweden)

Vadim A. Golubiatnikov

2015-09-01

Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

Direct and semi-direct radiative forcing of smoke aerosols over clouds

Directory of Open Access Journals (Sweden)

E. M. Wilcox

2012-01-01

Full Text Available Observations from Earth observing satellites indicate that dark carbonaceous aerosols that absorb solar radiation are widespread in the tropics and subtropics. When these aerosols mix with clouds, there is generally a reduction of cloudiness owing to absorption of solar energy in the aerosol layer. Over the subtropical South Atlantic Ocean, where smoke from savannah burning in southern Africa resides above a persistent deck of marine stratocumulus clouds, radiative heating of the smoke layer leads to a thickening of the cloud layer. Here, satellite observations of the albedo of overcast scenes of 25 km² size or larger are combined with additional satellite observations of clouds and aerosols to estimate the top-of-atmosphere direct radiative forcing attributable to presence of dark aerosol above bright cloud, and the negative semi-direct forcing attributable to the thickening of the cloud layer. The average positive direct radiative forcing by smoke over an overcast scene is 9.2±6.6 W m⁻² for cases with an unambiguous signal of absorbing aerosol over cloud in passive ultraviolet remote sensing observations. However, cloud liquid water path is enhanced by 16.3±7.7 g m⁻² across the range of values for sea surface temperature for cases of smoke over cloud. The negative radiative forcing associated with this semi-direct effect of smoke over clouds is estimated to be −5.9±3.5 W m⁻². Therefore, the cooling associated with the semi-direct cloud thickening effect compensates for greater than 60 % of the direct radiative effect. Accounting for the frequency of occurrence of significant absorbing aerosol above overcast scenes leads to an estimate of the average direct forcing of 1.0±0.7 W m⁻² contributed by these scenes averaged over the subtropical southeast Atlantic Ocean during austral winter. The regional average of the negative semi-direct forcing is −0.7±0.4 W m⁻²

N/P GaAs concentrator solar cells with an improved grid and bushbar contact design

International Nuclear Information System (INIS)

Desalvo, G.C.; Mueller, E.H.; Barnett, A.M.

1985-01-01

The major requirements for a solar cell used in space applications are high efficiency at AMO irradiance and resistance to high energy radiation. Gallium arsenide, with a band gap of 1.43 eV, is one of the most efficient sunlight to electricity converters (25%) when the the simple diode model is used to calculate efficiencies at AMO irradiance, GaAs solar cells are more radiation resistant than silicon solar cells and the N/P GaAs device has been reported to be more radiation resistant than similar P/N solar cells. This higher resistance is probably due to the fact that only 37% of the current is generated in the top N layer of the N/P cell compared to 69% in the top layer of a P/N solar cell. This top layer of the cell is most affected by radiation. It has also been theoretically calculated that the optimized N/P device will prove to have a higher efficiency than a similar P/N device. The use of a GaP window layer on a GaAs solar cell will avoid many of the inherent problems normally associated with a GaAlAs window while still proving good passivation of the GaAs surface. An optimized circular grid design for solar cell concentrators has been shown which incorporates a multi-layer metallization scheme. This multi-layer design allows for a greater current carrying capacity for a unit area of shading, which results in a better output efficiency

Interior insulation – Experimental investigation of hygrothermal conditions and damage evaluation of solid masonry façades in a listed building

DEFF Research Database (Denmark)

Odgaard, Tommy; Bjarløv, Søren Peter; Rode, Carsten

2018-01-01

Exterior walls in historic multi-storey buildings compared to walls in modern buildings have low thermal resistance, resulting in high energy loss and cold surfaces/floors in cold climates. When restrictions regarding alteration of the exterior appearance exist, interior insulation might be the o......Exterior walls in historic multi-storey buildings compared to walls in modern buildings have low thermal resistance, resulting in high energy loss and cold surfaces/floors in cold climates. When restrictions regarding alteration of the exterior appearance exist, interior insulation might...... be the only possibility to increase occupant comfort. This paper describes an investigation of the hygrothermal influence when applying 100 mm of diffusion open interior insulation to a historic multi-storey solid masonry spandrel. The dormitory room with the insulated spandrel had a normal indoor climate...... showed no risk of damage from the changed hygrothermal conditions when applying interior insulation to a solid masonry spandrel....

Development of fusion first-wall radiation damage facilities

International Nuclear Information System (INIS)

McElroy, R.J.; Atkins, T.

1986-11-01

The report describes work performed on the development of fusion-reactor first-wall simulation facilities on the Variable Energy Cyclotron, at Harwell, United Kingdom. Two irradiation facilities have been constructed: i) a device for helium and hydrogen filling up to 1000 ppm for post-irradiation mechanical properties studies, and ii) a helium implantation and damage facility for simultaneous injection of helium and radiation damage into a specimen under stress. These facilities are now fully commissioned and are available for investigations of first-wall radiation damage and for intercorrelation of fission- and fusion -reactor materials behaviour. (U.K.)

Early mechanisms in radiation-induced biological damage

International Nuclear Information System (INIS)

Powers, E.L.

1983-01-01

An introduction to the mechanisms of radiation action in biological systems is presented. Several questions about the nature of the radiation damage process are discussed, including recognition of the oxygen effects, dose-response relationships, and the importance of the hydroxyl radical

Neutron Damage Metrics and the Quantification of the Associated Uncertainty

International Nuclear Information System (INIS)

Griffin, P.J.

2012-01-01

The motivation for this work is the determination of a methodology for deriving and validating a reference metric that can be used to correlate radiation damage from neutrons of various energies and from charged particles with observed damage modes. Exposure functions for some damage modes are being used by the radiation effects community, e.g. 1-MeV-Equivalent damage in Si and in GaAs semiconductors as well as displacements per atom (dpa) and subsequent material embrittlement in iron. The limitations with the current treatment of these energy-dependent metrics include a lack of an associated covariance matrix and incomplete validation. In addition, the analytical approaches used to derive the current metrics fail to properly treat damage in compound/poly-atomic materials, the evolution and recombination of defects as a function of time since exposure, as well as the influence of dopant materials and impurities in the material of interest. The current metrics only provide a crude correlation with the damage modes of interest. They do not, typically, even distinguish between the damage effectiveness of different types of neutron-induced lattice defects, e.g. they fail to distinguish between a vacancy-oxygen defect and a divacancy with respect to the minority carrier lifetime and the decrease in gain in a Si bipolar transistor. The goal of this work is to facilitate the generation of more advanced radiation metrics that will provide an easier intercomparison of radiation damage as delivered from various types of test facilities and with various real-world nuclear applications. One first needs to properly define the scope of the radiation damage application that is a concern before an appropriate damage metric is selected. The fidelity of the metric selected and the range of environmental parameters under which the metric can be correlated with the damage should match the intended application. It should address the scope of real-world conditions where the metric will

THE ROLE OF RADIATION ACCIDENTS AND INDUSTRIAL APPLICATIONS OF IONIZING RADIATION SOURCES IN THE PROBLEM OF RADIATION DAMAGE

OpenAIRE

Кіхтенко, Ігор Миколайович

2016-01-01

Subject of research – the relevance of radiation damage at modern development of industry and medicine. In the world of radiation sources used in different fields of practice and their application in the future will increase, which greatly increases the likelihood of injury in a significant contingent of people.Research topic – the definition of the role of nuclear energy and the industrial use of ionizing radiation sources in the problem of radiation damage. The purpose of research – identif...

Current study on ionizing radiation-induced mitochondial DNA damage and mutations

International Nuclear Information System (INIS)

Zhou Xin; Wang Zhenhua; Zhang Hong

2012-01-01

Current advance in ionizing radiation-induced mitochondrial DNA damage and mutations is reviewed, in addition with the essential differences between mtDNA and nDNA damage and mutations. To extent the knowledge about radiation induced mitochondrial alterations, the researchers in Institute of Modern Physics, Chinese Academy of Sciences developed some technics such as real-time PCR, long-PCR for accurate quantification of radiation induced damage and mutations, and in-depth investigation about the functional changes of mitochondria based on mtDNA damage and mutations were also carried out. In conclusion, the important role of mitochondrial study in radiation biology is underlined, and further study on mitochondrial study associated with late effect and metabolism changes in radiation biology is pointed out. (authors)

State of damage of radiation facilities in great Hanshin earthquake

International Nuclear Information System (INIS)

1995-01-01

The southern Hyogo Prefecture earthquake of magnitude 7.2 occurred in the early morning of January 17, 1995. The outline of the earthquake and dead and injured, the damages of buildings, life lines, roads, railways and harbors, liquefaction phenomena, the state of occurrence of fires and so on are reported. The districts where the earthquakes of magnitude 5 or stronger occurred, and the radiation facilities in those districts are shown. The state of damage of radiation facilities in past earthquakes is summarized. From January 17 to 19 after the earthquake, Science and Technology Agency gave necessary instruction to and heard the state of damage from 79 permitted facilities in the areas of magnitude 7 or 6 by telephone, and received the report that there was not the fear of radiation damage in all facilities. Also the state of damage of radiation facilities was investigated at the actual places, and the questionnaires on the state of radiation facilities and the action at the time of the earthquake were performed. The state of radiation facilities accompanying the earthquake is reported. The matters to be reflected to the countermeasures to earthquakes anew for the protection of facilities, communication system, facility checkup system and the resumption of use are pointed out. (K.I.)

Thermal insulator made of ultra fine particles of silica. Chobiryushi silica kei dannetsuzai

Energy Technology Data Exchange (ETDEWEB)

Eguchi, T.

1991-05-30

An overview was presented of properties and applications of thermal insulator made of ultra fine powder of silica, MICROTHERM. The thermal conductivity of MICROTHERM is as low as (1/3) - (1/4) of that of conventional thermal insulator, because it is mainly composed of fumed silica or aero gel and formed into porous structure. In addition, metal oxide of special particle size is added to it in order to reject the radiative heat. The thermal insulation property and the mechanical strength of MICROTHERM is not affected by a sudden change in temperature and moisture. The standard type of MICROTHERM can be used at a temperature up to 950 {degree}C, while the high temperature type MICROTHERM can stand a high temperature up to 1025 {degree}C for long period of time. The thickness of insulator can be reduced markedly by using MICROTHERM as compared with the use of conventional insulating materials. Many new products in which MICROTHERM is used came into market. New type kilt, Semi-cylindrical block, Super high temperature MICROTHERM are just a few examples. Variety of application and energy saving effect are attracting public attention. 11 figs.

Effect of thermal annealing on optical properties of implanted GaAs

NARCIS (Netherlands)

Kulik, M; Komarov, FF; Maczka, D

GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

Lightweight, Thermally Insulating Structural Panels

Science.gov (United States)

Eisen, Howard J.; Hickey, Gregory; Wen, Liang-Chi; Layman, William E.; Rainen, Richard A.; Birur, Gajanana C.

1996-01-01

Lightweight, thermally insulating panels that also serve as structural members developed. Honeycomb-core panel filled with low-thermal-conductivity, opacified silica aerogel preventing convection and minimizes internal radiation. Copper coating on face sheets reduces radiation. Overall thermal conductivities of panels smaller than state-of-art commercial non-structurally-supporting foam and fibrous insulations. On Earth, panels suitable for use in low-air-pressure environments in which lightweight, compact, structurally supporting insulation needed; for example, aboard high-altitude aircraft or in partially evacuated panels in refrigerators.

Corrosion by photochemical reaction due to synchrotron radiation in TRISTAN vacuum system

International Nuclear Information System (INIS)

Momose, Takashi; Ishimaru, Hajime

1989-01-01

In the electron-positron collision ring (TMR) in the National Laboratory for High Energy Physics, the operation at the beam energy of 30 GeV is carried out. The critical energy of synchrotron radiation corresponding to this energy is 243 keV which is the highest in the world. Consequently, the radiation damage of various substances due to this radiation has become the problem. From the viewpoint that the TMR is the vacuum system totally made of aluminum alloy for the first time in the world, the problem peculiar to aluminum alloy and the related problem of material damage and the countermeasures are discussed. Beam energy and attenuation length, the radiation dose in the TMR tunnel, the beam current-time product of TMR, the examples of radiation damage such as the atmosphere in TAR, the atmosphere in TMR, the aluminum bellows, aluminum chamber and lead radiation shield in TMR, the aluminum beam line in the atmosphere of TAR, the heat-insulating kapton film with vacuum deposited aluminum films, Teflon and polystyrene insulators, the stainless steel terminals and cables for position monitors, the O-rings for gate valves, polyvinyl chloride and so on are reported. (K.I.)

Radiation damage in nuclear waste materials

International Nuclear Information System (INIS)

Jencic, I.

2000-01-01

Final disposal of high-level radioactive nuclear waste is usually envisioned in some sort of ceramic material. The physical and chemical properties of host materials for nuclear waste can be altered by internal radiation and consequently their structural integrity can be jeopardized. Assessment of long-term performance of these ceramic materials is therefore vital for a safe and successful disposal. This paper presents an overview of studies on several possible candidate materials for immobilization of fission products and actinides, such as spinel (MgAl 2 O 4 ), perovskite (CaTiO 3 ), zircon (ZrSiO 4 ), and pyrochlore (Gd 2 Ti 2 O 7 and Gd 2 Zr 2 O 7 ). The basic microscopic picture of radiation damage in ceramics consists of atomic displacements and ionization. In many cases these processes result in amorphization (metaminctization) of irradiated material. The evolution of microscopic structure during irradiation leads to various macroscopic radiation effects. The connection between microscopic and macroscopic picture is in most cases at least qualitatively known and studies of radiation induced microscopic changes are therefore an essential step in the design of a reliable nuclear waste host material. The relevance of these technologically important results on our general understanding of radiation damage processes and on current research efforts in Slovenia is also addressed. (author)

Investigation of radiation damage effects in neutron irradiated CCD

International Nuclear Information System (INIS)

Brau, James E.; Igonkina, Olga; Potter, Chris T.; Sinev, Nikolai B.

2005-01-01

A Charge Coupled Devices (CCD)-based vertex detector is a leading option for vertex detection at the future linear collider. A major issue for this application is the radiation hardness of such devices. Tests of radiation hardness of CCDs used in the SLD vertex detector, VXD3, have been reported earlier. The first measurements of 1998 involved a spare VXD3 CCD that was irradiated with neutrons from a radioactive source (Pu-Be), and from a nuclear reactor. In 2003, we had the opportunity to disassemble the VXD3 detector and study the nature of the radiation damage it incurred during 3 years of operation at SLC. In the preparation for this study, additional experiments with the spare VXD3 CCD were performed. These included measurements of trapping times in neutron irradiated CCDs. Results, reported here, will help us better understand the mechanism of radiation damage effects and develop techniques to minimize performance degradation due to radiation damage

Radiation damage to DNA: The importance of track structure

CERN Document Server

Hill, M A

1999-01-01

A wide variety of biological effects are induced by ionizing radiation, from cell death to mutations and carcinogenesis. The biological effectiveness is found to vary not only with the absorbed dose but also with the type of radiation and its energy, i.e., with the nature of radiation tracks. An overview is presented of some of the biological experiments using different qualities of radiation, which when compared with Monte Carlo track structure studies, have highlighted the importance of the localized spatial properties of stochastic energy deposition on the nanometer scale at or near DNA. The track structure leads to clustering of damage which may include DNA breaks, base damage etc., the complexity of the cluster and therefore its biological repairability varying with radiation type. The ability of individual tracks to produce clustered damage, and the subsequent biological response are important in the assessment of the risk associated with low-level human exposure. Recent experiments have also shown that...

Radiation damage in CaF2: Gd

International Nuclear Information System (INIS)

Prado, L.

1979-01-01

Calcium fluoride crystals doped with Gd 3+ at four different concentrations were irradiated at room temperature. The damage produced by radiation and the primary and secondary effects as well were studied by optical spectroscopy. The increase in optical absorption (with loss of transparency) varied from sample as a function of concentration and dose. The coloration curves showed an evolution from two to three radiation damage steps when going from a pure to the most Gd 3+ concentrated sample. The obtained spectra were analysed at characteristic wave lenghts of electronic defects (photochromic centers, F and its aggregates) and of Gd 3+ and Gd 2+ defects. As a result of the radiation damage the valence change (Gd 3+ →Gd 2+ ) and its reversible character under thermal activation were directly observed. These effects were correlated with other observed effects such as the room temperature luminescence after the irradiation ceased. The non radiative F centers formation from the interaction of holes and photochromic centers was also observed and analysed. A thermal activation study of the several defects responsible for the different absorption bands was made. Values of activation energies were obtained as expected for the kind of defects involved in these processes [pt

Relative radiation sensitivity of insulators, stabilizers, and superconductors

International Nuclear Information System (INIS)

Van Konynenburg, R.A.; Guinan, M.W.

1980-12-01

The operating conditions of the magnets including temperature and radiation fields are discussed. Comments were made on the nuclear heating. Components of the magnet system, including the materials used, the important properties, the atomic structure, the damage mechanism, and the effects of room temperature warmup are described. Some failure criteria for the various components are suggested. Available data concerning radiation effects on each component are discussed. Their radiation sensitivities are compared using the conditions calculated for the ETF toroidal field magnet inboard leg, and ranked in order of sensitivity. Comments were made on the implications of this ranking for the directions of future applied materials research

Radiation damage to DNA: The importance of track structure

International Nuclear Information System (INIS)

Hill, M.A.

1999-01-01

A wide variety of biological effects are induced by ionizing radiation, from cell death to mutations and carcinogenesis. The biological effectiveness is found to vary not only with the absorbed dose but also with the type of radiation and its energy, i.e., with the nature of radiation tracks. An overview is presented of some of the biological experiments using different qualities of radiation, which when compared with Monte Carlo track structure studies, have highlighted the importance of the localized spatial properties of stochastic energy deposition on the nanometer scale at or near DNA. The track structure leads to clustering of damage which may include DNA breaks, base damage etc., the complexity of the cluster and therefore its biological repairability varying with radiation type. The ability of individual tracks to produce clustered damage, and the subsequent biological response are important in the assessment of the risk associated with low-level human exposure. Recent experiments have also shown that biological response to radiation is not always restricted to the 'hit' cell but can sometimes be induced in 'un-hit' cells near by

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

Crosslinking of wire and cable insulation using electron accelerators

International Nuclear Information System (INIS)

Feng Yongxiang; Ma Zueteh

1992-01-01

Radiation crosslinking of wire and cable insulation is a well-established technology that is widely used in industry. The advantages of radiation crosslinking over chemical crosslinking have helped maintain its steady growth. Since successful utilization of electron beam processing relies on the formulation of compounds used in insulation, the radiation crosslinking of various polymers is reviewed. The handling technology for crosslinking wire and cable insulation and the throughput capacity of electron beam processors are also discussed. More than 30% of the industrial electron accelerators in the world are used for the radiation crosslinking of wire and cable insulation. Prospects of increased use of electron accelerators for crosslinking of wire and cable insulation are very good. (orig.)

Progress report of Sandia National Laboratories (SNL) contribu- tion to IAEA CRP F11016 on ?Utilization of ion accelerators for studying and modeling of radiation induced defects in semicon- ductors and insulators? 3rd RCM.

Energy Technology Data Exchange (ETDEWEB)

Vizkelethy, Gyorgy [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

This report presents the results of Sandia National Laboratories’ (SNL) contribution to IAEA CRP F11016 as mostly raw data. The goal of this CRP is to study the effects of radiation on semiconductors and insulators with the emphasis on the effect of displacement damage due to MeV energy ions on the performance of semiconductor detectors and microelectronic devices. SNL is tasked with performing electrical characterization, irradiation, and IBIC, DLTS, C-­V measurements on devices used in the CRP, as well as calculating damage and ionization profiles for modeling.

Radiation damage in DNA

International Nuclear Information System (INIS)

Lafleur, V.

1978-01-01

A number of experiments are described with the purpose to obtain a better insight in the chemical nature and the biological significance of radiation-induced damage in DNA, with some emphasis on the significance of alkali-labile sites. It is shown that not only reactions of OH radicals but also of H radicals introduce breaks and other inactivating damage in single-standed phiX174 DNA. It is found that phosphate buffer is very suitable for the study of the reactions of H radicals with DNA, as the H 2 PO 4 - ions convert the hydrated electrons into H radicals. The hydrated electron, which does react with DNA, does not cause a detectable inactivation. (Auth.)

Ion - biomolecule interactions and radiation damage

International Nuclear Information System (INIS)

Schlathoelter, T.

2004-01-01

Full text: The biological effects of ionizing radiation in living cells are not a mere result of the direct impact of high energy quanta of radiation. Secondary particles such as low energy electrons, radicals and (multiply charged) ions are formed within the track. The interaction of these secondary particles with biologically relevant molecules is responsible for a large fraction of biological radiation damage to a cell, as well. Singly and multiply charged ions can be of importance as both, primary and secondary particles, and are known to cause severe biological damage. For instance, in heavy ion therapy and proton therapy the pronounced Bragg peak of fast (typically a few 100 MeV/u) ions in biological tissue is utilized. The Bragg peak is located at a depth, where the ions (mostly C q+ or protons) are slowed down to about 100 keV/u and have their maximum linear energy transfer (LET) to the medium. This depth is reasonably well defined and depends on the initial ion kinetic energy. Since the ions are rapidly stopped in this energy range, penetration beyond the Bragg peak is weak and it is thus possible to 'scan' the Bragg peak through a malignant tumour without excessive damage of the surrounding tissue by mere variation of the ion kinetic energy (i.e. the penetration depth). Severe biological damage is almost only possible, when the track of a primary quantum of ionizing radiation crosses the nucleus of a cell. Particularly the induction of double strand breaks of DNA or clustered DNA lesions is potentially lethal or mutagenic. A primary particle interacting with individual molecules within this environment leads to molecular excitation, ionization and fragmentation. In the process, the primary particle looses energy and slow secondary electrons and ions are formed, which might induce further damage. For a deep understanding of biological radiation damage on the level of individual molecules it is thus important to quantify excitation, ionization and

Computer simulations of radiation damage in protein crystals; Simulationsrechnungen zu Strahlenschaeden an Proteinkristallen

Energy Technology Data Exchange (ETDEWEB)

Zehnder, M

2007-03-15

The achievable resolution and the quality of the dataset of an intensity data collection for structure analysis of protein crystals with X-rays is limited among other factors by radiation damage. The aim of this work is to obtain a better quantitative understanding of the radiation damage process in proteins. Since radiation damage is unavoidable it was intended to look for the optimum ratio between elastically scattered intensity and radiation damage. Using a Monte Carlo algorithm physical processes after an inelastic photon interaction are studied. The main radiation damage consists of ionizations of the atoms through the electron cascade following any inelastic photon interaction. Results of the method introduced in this investigation and results of an earlier theoretical studies of the influence of Auger-electron transport in diamond are in a good agreement. The dependence of the radiation damage as a function of the energy of the incident photon was studied by computer-aided simulations. The optimum energy range for diffraction experiments on the protein myoglobin is 10-40 keV. Studies of radiation damage as a function of crystal volume and shape revealed that very small plate or rod shaped crystals suffer less damage than crystals formed like a cube with the same volume. Furthermore the influence of a few heavy atoms in the protein molecule on radiation damage was examined. Already two iron atoms in the unit cell of myoglobin increase radiation damage significantly. (orig.)

Spallation radiation damage and the radiation damage facility at the LAMPF A-6 target station

Energy Technology Data Exchange (ETDEWEB)

Wechsler, M.S.; Sommer, W.F. (Los Alamos National Lab., NM (USA))

1984-05-01

A redesign of the Clinton P. Anderson Los Alamos Meson Physics Facility (LAMPF) A-6 Target Station is underway that will permit materials irradiations to be conducted in the proton beam and in the spallation neutron environment under more controlled conditions than has been possible heretofore. The protons of energy near 800 MeV and beam current approaching one mA are able to produce radiation damage rates (displacement production rates) as high as can be achieved in fission reactors, and the damage is uniform over macroscopic dimensions. The spallation neutrons have a degraded fission spectrum energy distribution, with the important admixture of a high energy tail up to 800 MeV. Irradiations in these radiation environments can be used to address important problems in the development of materials for fusion reactors. The redesign of the A-6 Target Station is described and plans for its use are discussed.

Development of efficient, radiation-insensitive GaAs:Zn LEDs

International Nuclear Information System (INIS)

Barnes, C.E.

1977-01-01

Although amphoterically Si doped GaAs LEDs are commercially popular because of their high light output, they are extremely sensitive to irradiation. Therefore, it would be desirable to have a viable alternative available for radiation environment applications. In this work it is shown that by increasing the hole concentration in the active region of nonamphoterically doped GaAs LEDs, one can simultaneously achieve high light output and low radiation sensitivity. Experimental results indicate that the minority carrier lifetime is smaller in more heavily doped devices so that the lifetime-damage constant, tau/sub o/K, is also smaller. Hence, the heavily doped devices should have greater radiation hardness. Neutron-induced light output degradation data as a function of hole concentration confirm this conclusion. The results also show that the pre-irradiation light output is greatest in the heavily doped LEDs. The accompanying decrease of tau/sub o/ in the heavily doped devices indicates that the total minority carrier lifetime is at least partially controlled by the radiative lifetime; a requirement for simultaneously achieving radiation hardness and high initial light output. Finally, an experimental comparison with amphoterically Si doped LEDs shows that the heavily doped devices are superior for neutron fluences greater than 2 x 10 12 n/cm 2

Modeling of altered layer formation during reactive ion etching of GaAs

Energy Technology Data Exchange (ETDEWEB)

Mutzke, A. [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Rai, A., E-mail: Abha.Rai@ipp.mpg.de [Max-Planck-Institute of Plasmaphysics, EURATOM Association, D-17491 Greifswald (Germany); Schneider, R.; Angelin, E.J.; Hippler, R. [Institute of Physics, Ernst-Moritz-Arndt-University Greifswald, Felix-Hausdorff-Str.6, D-17489 Greifswald (Germany)

2012-12-15

Highlights: Black-Right-Pointing-Pointer Experimental result showing the preferential sputtering of GaAs (150 keV Ar{sup +} and thermal O on GaAs) during reactive ion beam etching (RIBE) has been reported. Black-Right-Pointing-Pointer A model based on binary collisions (SDTrimSP) is presented to simulate RIBE. Black-Right-Pointing-Pointer The model is used to explain the reported experimental data and also the results by Grigonis and co-workers [1]. - Abstract: The binary collision based SDTrimSP model has been used to simulate the reactive ion beam etching (RIBE) of GaAs in the presence of energetic Ar ions and thermal O atoms. It includes the collisional effects, diffusive processes and chemical reactions taking place in the system. The model parameters are fitted using the experimental observations of Grigonis and co-workers [1] and validated with the experimental results obtained during the GaAs ion etching presented in this paper. A detailed analysis is presented to understand the effect of the diffusive processes and the role of O during RIBE of GaAs. It is shown how the presence of damage caused by the energetic Ar coupled with the presence of thermal O opens up chemical reaction channels which eventually leads to the preferential sputtering of Ga observed at the ion etching facility at University of Greifswald.

Mechanisms for radiation damage in DNA

International Nuclear Information System (INIS)

Sevilla, M.D.

1987-01-01

Several mechanisms are proposed for radiation damage to DNA and its constituents, and a series of experiments utilizing electron spin resonance spectrometry have been used to test the proposed mechanisms. In the past we have concentrated chiefly on investigating irradiated systems of DNA constituents. In this year's effort we have concentrated on radiation effects on DNA itself. In addition studies of radiation effects on lipids and model compounds have been performed which shed light on the only other proposed site for cell kill, the membrane

Radiation damage in BaF2 crystals

International Nuclear Information System (INIS)

Woody, C.L.; Kierstead, J.A.; Levy, P.W.; Stoll, S.

1991-01-01

The effects of radiation damage and recovery have been studied in BaF 2 crystals exposed to 60 Co radiation. The change in optical transmission and scintillation light output have been measured as a function of dose up to 4.7 x 10 6 rad. Although some crystals exhibit a small change in transmission, a greater change in scintillation light output is observed. Several 25 cm long crystals whichhave been irradiated show large changes in both transmission and light output. Recovery from radiation damage has been studied as a function of time and exposure to UV light. A long lived radiation induced phosphorescence has been observed in all irradiated samples which is distinct from the standard fast and slow scintillation emissions. The emission spectrum of the phosphorescence has been measured and shown a peakat ∼330 nm, near the region of the slow scintillation component. Results are given on the dependence of the decay time of the phosphorescence with dose

Radiation damage in non-metals

International Nuclear Information System (INIS)

Stoneham, A.M.

1980-01-01

Work on the problem of radiation damage in non-metals over the past 25 years is reviewed with especial emphasis on the contribution made at AERE, Harwell and in particular by members of the Theoretical Physics Division. In the years between 1954 and the end of the 1960's the main thrust in the radiation damage of non-metals was model-building including devising defect models and mechanisms that were qualitatively acceptable, and compiling systematic data. The early 1970's made greater quantitative demands as computer techniques made theory more powerful. In many cases it was possible to predict defect properties accurately, so that one could distinguish between different defect models which were hard to tell apart by experiment alone. In the late 1970's the most important aspect has moved towards mechanisms of defect processes, especially in cases where experiment by itself is limited by timescale, by complexity, by the unintentional impurities inevitable in real crystals, or by the extreme conditions required. (UK)

Radioactivity, shielding, radiation damage, and remote handling

International Nuclear Information System (INIS)

Wilson, M.T.

1975-01-01

Proton beams of a few hundred million electron volts of energy are capable of inducing hundreds of curies of activity per microampere of beam intensity into the materials they intercept. This adds a new dimension to the parameters that must be considered when designing and operating a high-intensity accelerator facility. Large investments must be made in shielding. The shielding itself may become activated and require special considerations as to its composition, location, and method of handling. Equipment must be designed to withstand large radiation dosages. Items such as vacuum seals, water tubing, and electrical insulation must be fabricated from radiation-resistant materials. Methods of maintaining and replacing equipment are required that limit the radiation dosages to workers.The high-intensity facilities of LAMPF, SIN, and TRIUMF and the high-energy facility of FERMILAB have each evolved a philosophy of radiation handling that matches their particular machine and physical plant layouts. Special tooling, commercial manipulator systems, remote viewing, and other techniques of the hot cell and fission reactor realms are finding application within accelerator facilities. (U.S.)

Ionizing radiation, antioxidant response and oxidative damage: A meta-analysis

Energy Technology Data Exchange (ETDEWEB)

Einor, D., E-mail: daniel@einor.com [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); Bonisoli-Alquati, A., E-mail: andreabonisoli@gmail.com [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); School of Renewable Natural Resources, Louisiana State University AgCenter, Baton Rouge, LA 70803 (United States); Costantini, D., E-mail: davidcostantini@libero.it [Department of Biology, University of Antwerp, Wilrijk, B-2610, Antwerp (Belgium); Mousseau, T.A., E-mail: mousseau@sc.edu [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); Faculty of Bioscience and Biotechnology, Chubu University, Kasugai (Japan); Møller, A.P., E-mail: anders.moller@u-psud.fr [Laboratoire d' Ecologie, Systématique et Evolution, CNRS UMR 8079, Université Paris-Sud, Bâtiment 362, F-91405 Orsay Cedex (France)

2016-04-01

One mechanism proposed as a link between exposure to ionizing radiation and detrimental effects on organisms is oxidative damage. To test this hypothesis, we surveyed the scientific literature on the effects of chronic low-dose ionizing radiation (LDIR) on antioxidant responses and oxidative damage. We found 40 publications and 212 effect sizes for antioxidant responses and 288 effect sizes for effects of oxidative damage. We performed a meta-analysis of signed and unsigned effect sizes. We found large unsigned effects for both categories (0.918 for oxidative damage; 0.973 for antioxidant response). Mean signed effect size weighted by sample size was 0.276 for oxidative damage and − 0.350 for antioxidant defenses, with significant heterogeneity among effects for both categories, implying that ionizing radiation caused small to intermediate increases in oxidative damage and small to intermediate decreases in antioxidant defenses. Our estimates are robust, as shown by very high fail-safe numbers. Species, biological matrix (tissue, blood, sperm) and age predicted the magnitude of effects for oxidative damage as well as antioxidant response. Meta-regression models showed that effect sizes for oxidative damage varied among species and age classes, while effect sizes for antioxidant responses varied among species and biological matrices. Our results are consistent with the description of mechanisms underlying pathological effects of chronic exposure to LDIR. Our results also highlight the importance of resistance to oxidative stress as one possible mechanism associated with variation in species responses to LDIR-contaminated areas. - Highlights: • There is interest in variation in metabolic effects of chronic low-dose ionizing radiation • A random effect meta-analysis of effect sizes of radioactive contamination was performed • We found significant effects of radiation on oxidative damage and antioxidant response • We found significant heterogeneity among

Analysis of radiation damage in on-orbit solar array of Venus explorer Akatsuki

International Nuclear Information System (INIS)

Toyota, Hiroyuki; Shimada, Takanobu; Takahashi, You; Imamura, Takeshi; Hada, Yuko; Ishii, Takako T.; Isobe, Hiroaki; Asai, Ayumi; Shiota, Daikou

2013-01-01

This paper describes an analysis of radiation damage in solar array of Venus explorer Akatsuki observed on orbit. The output voltage of the solar array have shown sudden drops, which are most reasonably associated with radiation damage, three times since its launch. The analysis of these radiation damages is difficult, because no direct observation data of the spectra and the amount of the high-energy particles is available. We calculated the radiation damage using the relative damage coefficient (RDC) method assuming a typical spectral shape of protons. (author)

Cobalt-60 simulation of LOCA [loss of coolant accident] radiation effects

International Nuclear Information System (INIS)

Buckalew, W.H.

1989-07-01

The consequences of simulating nuclear reactor loss of coolant accident (LOCA) radiation effects with Cobalt-60 gamma ray irradiators have been investigated. Based on radiation induced damage in polymer base materials, it was demonstrated that electron/photon induced radiation damage could be related on the basis of average absorbed radiation dose. This result was used to estimate the relative effectiveness of the mixed beta/gamma LOCA and Cobalt-60 radiation environments to damage both bare and jacketed polymer base electrical insulation materials. From the results obtained, it is concluded that present simulation techniques are a conservative method for simulating LOCA radiation effects and that the practices have probably substantially overstressed both bare and jacketed materials during qualification testing. 9 refs., 8 figs., 5 tabs

Radiation Damage in the LHCb VELO

CERN Multimedia

Harrison, Jon

2011-01-01

The VErtex LOcator (VELO) is a silicon strip detector designed to reconstruct particle tracks and vertices produced by proton-proton interactions near to the LHCb interaction point. The excellent track resolution and decay vertex separation provided by the VELO are essential to all LHCb analyses. For the integrated luminosity delivered by the LHC up to the end of $2011$ the VELO is exposed to higher particle fluences than any other silicon detector of the four major LHC experiments. These proceedings present results from radiation damage studies carried out during the first two years of data taking at the LHC. Radiation damage has been observed in all of the $88$ VELO silicon strip sensors, with many sensors showing evidence of type-inversion in the highest fluence regions. Particular attention has been given to the two \

Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs

Czech Academy of Sciences Publication Activity Database

Dubecký, F.; Dubecký, M.; Hubík, Pavel; Kindl, Dobroslav; Gombia, E.; Baldini, M.; Nečas, V.

2013-01-01

Roč. 82, APR (2013), s. 72-76 ISSN 0038-1101 Institutional support: RVO:68378271 Keywords : Schottky barrier * low-bias transport * semi-insulating GaAs * low work -function * high resistence * low leakage current * blocking contact Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.514, year: 2013

Structural and optical properties of diluted magnetic Ga1−xMnxAs ...

Indian Academy of Sciences (India)

2017-10-31

Oct 31, 2017 ... grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates with orientations (100), (110), (311)B and ... Recently, the demonstration of large tunneling magnetore- sistance induced by resonant tunneling in GaMnAs-based heterostructures made such structures to be in spin-dependent.

Activation and radiation damage in the environment of hadron accelerators

CERN Document Server

Kiselev, Daniela

2013-01-01

A component which suffers radiation damage usually also becomes radioactive, since the source of activation and radiation damage is the interaction of the material with particles from an accelerator or with reaction products. However, the underlying mechanisms of the two phenomena are different. These mechanisms are described here. Activation and radiation damage can have far-reaching consequences. Components such as targets, collimators, and beam dumps are the first candidates for failure as a result of radiation damage. This means that they have to be replaced or repaired. This takes time, during which personnel accumulate dose. If the dose to personnel at work would exceed permitted limits, remote handling becomes necessary. The remaining material has to be disposed of as radioactive waste, for which an elaborate procedure acceptable to the authorities is required. One of the requirements of the authorities is a complete nuclide inventory. The methods used for calculation of such inventories are presented,...

Characterization and Modeling of Neutron and Gamma-Ray Radiation Damage in Silicon Carbide Semi-Conductor Materials and Silica Optical Fibers at Cryogenic Temperature

Data.gov (United States)

National Aeronautics and Space Administration — When radiation is incident upon a material, it can knock atoms within the lattice out of their proper positions. However, this damage can often be overcome because...

Radiation-damage calculations with NJOY

International Nuclear Information System (INIS)

MacFarlane, R.E.; Muir, D.W.; Mann, F.W.

1983-01-01

Atomic displacement, gas production, transmutation, and nuclear heating can all be calculated with the NJOY nuclear data processing system using evaluated data in ENDF/B format. Using NJOY helps assure consistency between damage cross sections and those used for transport, and NJOY provides convenient interface formats for linking data to application codes. Unique features of the damage calculation include a simple momentum balance treatment for radiative capture and a new model for (n, particle) reactions based on statistical model calculations. Sample results for iron and nickel are given and compared with the results of other methods

The role of radiation damage analysis in the fusion program

International Nuclear Information System (INIS)

Doran, D.G.

1983-01-01

The objective of radiation damage analysis is the prediction of the performance of facility components exposed to a radiation environment. The US Magnetic Fusion Energy materials program includes an explicit damage analysis activity within the Damage Analysis and Fundamental Studies (DAFS) Program. Many of the papers in these Proceedings report work done directly or indirectly in support of the DAFS program. The emphasis of this program is on developing procedures, based on an understanding of damage mechanisms, for applying data obtained in diverse radiation environments to the prediction of component behavior in fusion devices. It is assumed that the Fusion Materials Irradiation Test Facility will be available in the late 1980s to test (and calibrate where necessary) correlation procedures to the high fluences expected in commercial reactors. (orig.)

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

Directory of Open Access Journals (Sweden)

Domenico Melisi

2014-11-01

Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

Use of heavy ions to model radiation damage of metals

International Nuclear Information System (INIS)

Shirokov, S.V.; Vyshemirskij, M.P.

2011-01-01

The methods for modeling radiation damage of metals using heavy ions are reviewed and the results obtained are analyzed. It is shown that irradiation of metals with heavy ion can simulate neutron exposure with the equivalent dose with adequate accuracy and permits a detailed analysis of radiation damage of metals

Progress on clustered DNA damage in radiation research

International Nuclear Information System (INIS)

Yang Li'na; Zhang Hong; Di Cuixia; Zhang Qiuning; Wang Xiaohu

2012-01-01

Clustered DNA damage which caused by high LET heavy ion radiation can lead to mutation, tumorigenesis and apoptosis. Promoting apoptosis of cancer cells is always the basis of cancer treatment. Clustered DNA damage has been the hot topic in radiobiology. The detect method is diversity, but there is not a detail and complete protocol to analyze clustered DNA damage. In order to provide reference for clustered DNA damage in the radiotherapy study, the clustered DNA damage characteristics, the latest progresses on clustered DNA damage and the detecting methods are reviewed and discussed in detail in this paper. (authors)

Positron Annihilation in Insulating Materials

International Nuclear Information System (INIS)

Asoka-Kumar, P; Sterne, PA

2002-01-01

We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO 2 . Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, which predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO 2 samples

The insulation irradiation test program for the Compact Ignition Tokamak

International Nuclear Information System (INIS)

McManamy, T.J.; Kanemoto, G.; Snook, P.

1990-01-01

The electrical insulation for the toroidal field coils of the Compact Ignition Tokamak (CIT) is expected to be exposed to radiation doses on the order of 10 10 rad with ∼90% of the dose from neutrons. The coils are cooled to liquid nitrogen temperature and then heated during the pulse to a peak temperature >300 K. In a program to evaluate the effects of radiation exposure on the insulators, three types of boron-free insulation were irradiated at room temperature in the Advanced Technology Reactor (ATR) and tested at the Idaho National Engineering Laboratory. The materials were Spaulrad-S, Shikishima PG5-1, and Shikishima PG3-1. The first two use a bismaleimide resin and the third an aromatic amine hardened epoxy. Spaulrad-S is a two-dimensional (2-D) weave of S-glass, while the others are 3-D weaves of T-glass. Flexure and shear/compression samples were irradiated to approximately 5 x 10 9 rad and 3 x 10 10 rad with 35 to 40% of the total dose from neutrons. The shear/compression samples were tested in pairs by applying an average compression of 345 MPa and then a shear load. After static tests were completed, fatigue testing was done by cycling the shear load for up to 30,000 cycles with a constant compression. The static shear strength of the samples that did not fail was then determined. Generally, shear strengths on the order of 120 MPa were measured. The behavior of the flexure and shear/compression samples was significantly different; large reductions in the flexure strength were observed, while the shear strength stayed the same or increased slightly. The 3-D weave material demonstrated higher strength and significantly less radiation damage than the 2-D material in flexure but performed nearly identically when tested with combined shear and compression. The epoxy system was much more sensitive to fatigue damage than the bismaleimide materials. 9 refs., 5 figs

The dependence of radiation damage analysis on neutron dosimetry

International Nuclear Information System (INIS)

Goland, A.N.; Parkin, D.M.

1977-01-01

The characteristics of defect production in neutron spectra can be determined by utilizing neutron cross section data (e.g. ENDF/B), detailed neutron spectral data and radiation damage models. The combination of neutron cross section and spectral data is a fundamental starting point in applying damage models. Calculations using these data and damage models show that there are significant differences in the way defects are produced in various neutron spectra. Nonelastic events dominate the recoil energy distribution in high-energy neutron sources such as those based upon fusion and deuteron-breakup reactions. Therefore, high-energy neutron cross sections must be measured or calculated to supplement existing data files. Radiation damage models can then be used to further characterize the diverse neutron spectra

Total dose hardening of buried insulator in implanted silicon-on-insulator structures

International Nuclear Information System (INIS)

Mao, B.Y.; Chen, C.E.; Pollack, G.; Hughes, H.L.; Davis, G.E.

1987-01-01

Total dose characteristics of the buried insulator in implanted silicon-on-insulator (SOI) substrates have been studied using MOS transistors. The threshold voltage shift of the parasitic back channel transistor, which is controlled by charge trapping in the buried insulator, is reduced by lowering the oxygen dose as well as by an additional nitrogen implant, without degrading the front channel transistor characteristics. The improvements in the radiation characteristics of the buried insulator are attributed to the decrease in the buried oxide thickness or to the presence of the interfacial oxynitride layer formed by the oxygen and nitrogen implants

Radiation-induced DNA damage as a function of DNA hydration

International Nuclear Information System (INIS)

Swarts, S.G.; Miao, L.; Wheeler, K.T.; Sevilla, M.D.; Becker, D.

1995-01-01

Radiation-induced DNA damage is produced from the sum of the radicals generated by the direct ionization of the DNA (direct effect) and by the reactions of the DNA with free radicals formed in the surrounding environment (indirect effect). The indirect effect has been believed to be the predominant contributor to radiation-induced intracellular DNA damage, mainly as the result of reactions of bulk water radicals (e.g., OH·) with DNA. However, recent evidence suggests that DNA damage, derived from the irradiation of water molecules that are tightly bound in the hydration layer, may occur as the result of the transfer of electron-loss centers (e.g. holes) and electrons from these water molecules to the DNA. Since this mechanism for damaging DNA more closely parallels that of the direct effect, the irradiation of these tightly bound water molecules may contribute to a quasi-direct effect. These water molecules comprise a large fraction of the water surrounding intracellular DNA and could account for a significant proportion of intracellular radiation-induced DNA damage. Consequently, the authors have attempted to characterize this quasi-direct effect to determine: (1) the extent of the DNA hydration layer that is involved with this effect, and (2) what influence this effect has on the types and quantities of radiation-induced DNA damage

Calculation of high-temperature insulation parameters and heat transfer behaviors of multilayer insulation by inverse problems method

Directory of Open Access Journals (Sweden)

Huang Can

2014-08-01

Full Text Available In the present paper, a numerical model combining radiation and conduction for porous materials is developed based on the finite volume method. The model can be used to investigate high-temperature thermal insulations which are widely used in metallic thermal protection systems on reusable launch vehicles and high-temperature fuel cells. The effective thermal conductivities (ECTs which are measured experimentally can hardly be used separately to analyze the heat transfer behaviors of conduction and radiation for high-temperature insulation. By fitting the effective thermal conductivities with experimental data, the equivalent radiation transmittance, absorptivity and reflectivity, as well as a linear function to describe the relationship between temperature and conductivity can be estimated by an inverse problems method. The deviation between the calculated and measured effective thermal conductivities is less than 4%. Using the material parameters so obtained for conduction and radiation, the heat transfer process in multilayer thermal insulation (MTI is calculated and the deviation between the calculated and the measured transient temperatures at a certain depth in the multilayer thermal insulation is less than 6.5%.

Radiation Limits for Nb3Sn Superconductors for ITER Magnets: A literature review

International Nuclear Information System (INIS)

Simon, N.J.

1995-01-01

The data base on radiation damage to Nb 3 Sn superconductors is compiled from the literature and assessed in this report. Nb 3 Sn superconductors are currently under procurement for use in ITER magnet prototypes. In contrast to the data base on insulation materials proposed for use in ITER magnets, the data base on the radiation damage of Nb 3 Sn is much more complete. Key results have often been confirmed by several groups at different institutions. The investigation of variables that influence radiation damage has also been much more complete for Nb 3 Sn than for insulators. Furthermore, in situ testing of superconducting parameters is much easier than in situ mechanical testing of insulators, and in situ testing has invariably been performed after cryogenic irradiation of Nb 3 Sn. However, in recent years, Nb 3 Sn testing has also suffered from the lack of 4-K irradiation facilities. Just as new processing methods to obtain more economical Nb 3 Sn conductor products in large quantity were being developed, cryogenic irradiation sources were being phased out. Therefore, this brief introductory section presents some basic information on the properties and structure of Nb 3 Sn superconducting composites and the distinctions between different fabrication processes. This provides a background to assess the adequacy of the current cryogenic data base on radiation damage, Also, since synergistic effects of strain and irradiation have recently been investigated, a brief discussion of the effects of strain on Nb 3 Sn properties is included in this introduction

Extra lethal damage due to residual incompletely repaired sublethal damage in hyperfractionated and continuous radiation treatment

Energy Technology Data Exchange (ETDEWEB)

Chen, J.; van de Geijn, J.; Goffman, T. (ROB, DCT, NCI, NIH, Bethesda, Maryland 20892 (US))

1991-05-01

In the conventional linear--quadratic model of single-dose response, the {alpha} and {beta} terms reflect lethal damage created {ital during} the delivery of a dose, from two different presumed molecular processes, one linear with dose, the other quadratic. With the conventional one-fraction-per-day (or less) regimens, the sublethal damage (SLD), presumably repairing exponentially over time, is essentially completely fixed by the time of the next dose of radiation. If this assumption is true, the effects of subsequent fractions of radiation should be independent, that is, there should be little, if any, reversible damage left from previous fractions, at the time of the next dose. For multiple daily fractions, or for the limiting case, continuous radiation, this simplification may overlook damaged cells that have had insufficient time for repair. A generalized method is presented for accounting for extra lethal damage (ELD) arising from such residual SLD for hyperfractionation and continuous irradiation schemes. It may help to predict differences in toxicity and tumor control, if any, obtained with unconventional'' treatment regimens. A key element in the present model is the finite size and the dynamic character of the pool of sublethal damage. Besides creating the usual linear and quadratic components of lethal damage, each new fraction converts a certain fraction of the existing SLD into ELD, and creates some new SLD.

Extra lethal damage due to residual incompletely repaired sublethal damage in hyperfractionated and continuous radiation treatment

International Nuclear Information System (INIS)

Chen, J.; van de Geijn, J.; Goffman, T.

1991-01-01

In the conventional linear--quadratic model of single-dose response, the α and β terms reflect lethal damage created during the delivery of a dose, from two different presumed molecular processes, one linear with dose, the other quadratic. With the conventional one-fraction-per-day (or less) regimens, the sublethal damage (SLD), presumably repairing exponentially over time, is essentially completely fixed by the time of the next dose of radiation. If this assumption is true, the effects of subsequent fractions of radiation should be independent, that is, there should be little, if any, reversible damage left from previous fractions, at the time of the next dose. For multiple daily fractions, or for the limiting case, continuous radiation, this simplification may overlook damaged cells that have had insufficient time for repair. A generalized method is presented for accounting for extra lethal damage (ELD) arising from such residual SLD for hyperfractionation and continuous irradiation schemes. It may help to predict differences in toxicity and tumor control, if any, obtained with ''unconventional'' treatment regimens. A key element in the present model is the finite size and the dynamic character of the pool of sublethal damage. Besides creating the usual linear and quadratic components of lethal damage, each new fraction converts a certain fraction of the existing SLD into ELD, and creates some new SLD

Transition radiation on semi-infinite plate and Smith-Purcell effect

International Nuclear Information System (INIS)

Shul'ga, N F; Syshchenko, V V

2010-01-01

The Smith-Purcell radiation is usually measured when an electron passes over the grating of metallic stripes. However, for high frequencies (exceeding the plasma frequency of the grating material) none material could be treated as a conductor, but ought to be considered as a dielectric with plasma-like permittivity. So for describing Smith-Purcell radiation in the range of high frequencies new theoretical approaches are needed. In the present paper we apply the simple variant of eikonal approximation developed earlier to the case of radiation on the set of parallel semi-infinite dielectric plates. The formulae obtained describe the radiation generated by the particles both passing through the plates (traditionally referred as 'transition radiation') and moving in vacuum over the grating formed by the edges of the plates (traditionally referred as 'diffraction radiation', and, taking into account the periodicity of the plates arrangement, as Smith-Purcell radiation).

Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns

CERN Document Server

Grames, Joseph M; Brittian, Joshua; Charles, Daniel; Clark, Jim; Hansknecht, John; Lynn Stutzman, Marcy; Poelker, Matthew; Surles-Law, Kenneth E

2005-01-01

The primary limitation for sustained high quantum efficiency operation of GaAs photocathodes inside DC high voltage electron guns is ion back-bombardment of the photocathode. This process results from ionization of residual gas within the cathode/anode gap by the extracted electron beam, which is subsequently accelerated backwards to the photocathode. The damage mechanism is believed to be either destruction of the negative electron affinity condition at the surface of the photocathode or damage to the crystal structure by implantation of the bombarding ions. This work characterizes ion formation within the anode/cathode gap for gas species typical of UHV vacuum chambers (i.e., hydrogen, carbon monoxide and methane). Calculations and simulations are performed to determine the ion trajectories and stopping distance within the photocathode material. The results of the simulations are compared with test results obtained using a 100 keV DC high voltage GaAs photoemission gun and beamline at currents up to 10 mA D...

Ultrafast recombination in H+ bombarded InP and GaAs: Consequences for the carrier distribution functions

International Nuclear Information System (INIS)

Lamprecht, K.F.; Juen, S.; Hoepfel, R.A.; Palmetshofer, L.

1992-01-01

The authors studied the lifetimes and the luminescence spectra of photoexcited carriers in H + bombarded InP and GaAs for different damage doses by means of femtosecond luminescence spectroscopy. For InP the lifetime decreases down to 95 fs for the highest dose, whereas for GaAs no shorter lifetime than 650 fs could be observed. With decreasing lifetime they observe an increase of the high energy tail of the time-integrated luminescence spectrum which is even inverted for the 95 fs InP sample

Radiation induced DNA damage and repair in mutagenesis

International Nuclear Information System (INIS)

Strniste, G.F.; Chen, D.J.; Okinaka, R.T.

1987-01-01

The central theme in cellular radiobiological research has been the mechanisms of radiation action and the physiological response of cells to this action. Considerable effort has been directed toward the characterization of radiation-induced DNA damage and the correlation of this damage to cellular genetic change that is expressed as mutation or initiating events leading to cellular transformation and ultimately carcinogenesis. In addition, there has been a significant advancement in their understanding of the role of DNA repair in the process of mutation leading to genetic change in cells. There is extensive literature concerning studies that address radiation action in both procaryotic and eucaryotic systems. This brief report will make no attempt to summarize this voluminous data but will focus on recent results from their laboratory of experiments in which they have examined, at both the cellular and molecular levels, the process of ionizing radiation-induced mutagenesis in cultured human cells

Automated analysis of damages for radiation in plastics surfaces

International Nuclear Information System (INIS)

Andrade, C.; Camacho M, E.; Tavera, L.; Balcazar, M.

1990-02-01

Analysis of damages done by the radiation in a polymer characterized by optic properties of polished surfaces, of uniformity and chemical resistance that the acrylic; resistant until the 150 centigrade grades of temperature, and with an approximate weight of half of the glass. An objective of this work is the development of a method that analyze in automated form the superficial damages induced by radiation in plastic materials means an images analyst. (Author)

Laser annealing heals radiation damage in avalanche photodiodes

Energy Technology Data Exchange (ETDEWEB)

Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

2017-12-15

Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

Computer simulation of radiation damage in NaCl using a kinetic rate reaction model

International Nuclear Information System (INIS)

Soppe, W.J.

1993-01-01

Sodium chloride and other alkali halides are known to be very susceptible to radiation damage in the halogen sublattice when exposed to ionizing radiation. The formation of radiation damage in NaCl has generated interest because of the relevance of this damage to the disposal of radioactive waste in rock salt formations. In order to estimate the long-term behaviour of a rock salt repository, an accurate theory describing the major processes of radiation damage in NaCl is required. The model presented in this paper is an extended version of the Jain-Lidiard model; its extensions comprise the effect of impurities and the colloid nucleation stage on the formation of radiation damage. The new model has been tested against various experimental data obtained from the literature and accounts for several well known aspects of radiation damage in alkali halides which were not covered by the original Jain-Lidiard model. The new model thus may be expected to provide more reliable predictions for the build-up of radiation damage in a rock salt nuclear waste repository. (Author)

Radiation damage of uranium

International Nuclear Information System (INIS)

Lazarevic, Dj.

1966-11-01

Study of radiation damage covered the following: Kinetics of electric resistance of uranium and uranium alloy with 1% of molybdenum dependent on the second phase and burnup rate; Study of gas precipitation and diffusion of bubbles by transmission electron microscopy; Numerical analysis of the influence of defects distribution and concentration on the rare gas precipitation in uranium; study of thermal sedimentation of uranium alloy with molybdenum; diffusion of rare gas in metal by gas chromatography method

Investigation of proton damage in III-V semiconductors by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Yaccuzzi, E.; Giudici, P. [Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Khachadorian, S.; Strittmatter, A.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Suárez, S. [Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Reinoso, M. [Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina); CONICET, Godoy Cruz 2290 (C1425FQB), CABA (Argentina); Goñi, A. R. [ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain)

2016-06-21

We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.

Radiation tests on selected electrical insulating materials for high-power and high voltage application

International Nuclear Information System (INIS)

Liptak, G.; Schuler, R.; Haberthuer, B.; Mueller, H.; Zeier, W.; Maier, P.; Schoenbacher, H.

1985-01-01

This report presents a comprehensive set of test results on the irradiation of insulating materials and systems used for the windings of rotating machines, dry-type transformers, and magnet coils. The materials were: Novolac, bisphenol-A, and cycloaliphatic types of epoxy; saturated and unsaturated polyesterimide; silicone, phenolic, and acrylic resins. The reinforcement consisted of glass mat, glass roving, glass cloth, mica paper, polyester mat, polyester roving, polyester cloth, aromatic polyamide paper, or combinations thereof. The materials were irradiated in an 8 MW pool reactor up to integrated doses of 10 8 Gy. On most samples, flexural properties were examined as recommended by IEC Standard 544. For tapes and varnishes, the breakdown voltage was measured. The adhesion of copper bars glued together with an epoxy resin was examined by means of a lap-shear test. A cupping test by means of the Erichsen apparatus was used to measure the flexibility of varnishes. The results are presented in tables and graphs for each of the materials tested. Those from mechanical tests show that the radiation resistance of composite resin-rich insulations depends not only on the base resin combination and the reinforcement material but, to a large degree, also on the adhesion between the two. It appears that better adhesion, and consequently higher radiation resistance, is obtained by special surface treatments of glass fibres. For laminates, higher radiation resistance is obtained with glass mat and resin combinations than with glass cloth as reinforcing materials. The breakdown voltage tests show that the application of mechanical stress to most irradiated samples causes the insulation layer to crack, resulting in lower dielectric strength. For a number of materials, the critical properties of flexural strength and breakdown voltage are above 50% of the initial value at doses between 10 7 and 10 8 Gy, i.e. a radiation index of 7 to 8 at 10 5 Gy/h. (orig.)

Decreasing the damage in smart structures using integrated online DDA/ISMP and semi-active control

International Nuclear Information System (INIS)

Karami, K; Amini, F

2012-01-01

Integrated structural health monitoring (SHM) and vibration control has been considered recently by researchers. Up to now, all of the research in the field of integrated SHM and vibration control has been conducted using control devices and control algorithms to enhance system identification and damage detection. In this study, online SHM is used to improve the performance of structural vibration control, unlike previous research. Also, a proposed algorithm including integrated online SHM and a semi-active control strategy is used to reduce both damage and seismic response of the main structure due to strong seismic disturbance. In the proposed algorithm the nonlinear behavior of the building structure is simulated during the excitation. Then, using the measured data and the damage detection algorithm based on identified system Markov parameters (DDA/ISMP), a method proposed by the authors, damage corresponding to axial and bending stiffness of all structural elements is identified. In this study, a 20 t MR damper is employed as a control device to mitigate both damage and dynamic response of the building structure. Also, the interaction between SHM and a semi-active control strategy is assessed. To illustrate the efficiency of the proposed algorithm, a two bay two story steel braced frame structure is used. By defining the damage index and damage rate index, the input current of the MR damper is generated using a fuzzy logic controller. The obtained results show that the possibility of smart building creation is provided using the proposed algorithm. In comparison to the widely used strategy of only vibration control, it is shown that the proposed algorithm is more effective. Furthermore, in the proposed algorithm, the total consumed current intensity and generated control forces are considerably less than for the strategy of only vibration control. (paper)

Decreasing the damage in smart structures using integrated online DDA/ISMP and semi-active control

Science.gov (United States)

Karami, K.; Amini, F.

2012-10-01

Integrated structural health monitoring (SHM) and vibration control has been considered recently by researchers. Up to now, all of the research in the field of integrated SHM and vibration control has been conducted using control devices and control algorithms to enhance system identification and damage detection. In this study, online SHM is used to improve the performance of structural vibration control, unlike previous research. Also, a proposed algorithm including integrated online SHM and a semi-active control strategy is used to reduce both damage and seismic response of the main structure due to strong seismic disturbance. In the proposed algorithm the nonlinear behavior of the building structure is simulated during the excitation. Then, using the measured data and the damage detection algorithm based on identified system Markov parameters (DDA/ISMP), a method proposed by the authors, damage corresponding to axial and bending stiffness of all structural elements is identified. In this study, a 20 t MR damper is employed as a control device to mitigate both damage and dynamic response of the building structure. Also, the interaction between SHM and a semi-active control strategy is assessed. To illustrate the efficiency of the proposed algorithm, a two bay two story steel braced frame structure is used. By defining the damage index and damage rate index, the input current of the MR damper is generated using a fuzzy logic controller. The obtained results show that the possibility of smart building creation is provided using the proposed algorithm. In comparison to the widely used strategy of only vibration control, it is shown that the proposed algorithm is more effective. Furthermore, in the proposed algorithm, the total consumed current intensity and generated control forces are considerably less than for the strategy of only vibration control.

A review on radiation damage of erythrocyte membranes

International Nuclear Information System (INIS)

Wang Junling; Wang Weidong; Qin Guangyong

2007-01-01

Biomembrane has very important biological function. Its damage will seriously disturb the directivity, the orderly nature and coordination of cell metabolism, and finally causes the cell death. This paper reviewed the effects of radiation damage on erythrocyte membrane in membrane composition, membrane function and oxidation resistance system. (authors)

DNA Damage by Ionizing Radiation: Tandem Double Lesions by Charged Particles

Science.gov (United States)

Huo, Winifred M.; Chaban, Galina M.; Wang, Dunyou; Dateo, Christopher E.

2005-01-01

Oxidative damages by ionizing radiation are the source of radiation-induced carcinogenesis, damage to the central nervous system, lowering of the immune response, as well as other radiation-induced damages to human health. Monte Carlo track simulations and kinetic modeling of radiation damages to the DNA employ available molecular and cellular data to simulate the biological effect of high and low LET radiation io the DNA. While the simulations predict single and double strand breaks and base damages, so far all complex lesions are the result of stochastic coincidence from independent processes. Tandem double lesions have not yet been taken into account. Unlike the standard double lesions that are produced by two separate attacks by charged particles or radicals, tandem double lesions are produced by one single attack. The standard double lesions dominate at the high dosage regime. On the other hand, tandem double lesions do not depend on stochastic coincidences and become important at the low dosage regime of particular interest to NASA. Tandem double lesions by hydroxyl radical attack of guanine in isolated DNA have been reported at a dosage of radiation as low as 10 Gy. The formation of two tandem base lesions was found to be linear with the applied doses, a characteristic of tandem lesions. However, tandem double lesions from attack by a charged particle have not been reported.

Radiation reflection from a semi-infinite layer of magnetized plasma

International Nuclear Information System (INIS)

Silant'ev, N.A.

1981-01-01

From a transpot equation and the invariance principle, the expre-- ssion is derived for the density matrix of the reflected radiation from a semi-infinite layer of magnetized plasma. The albedo of the medium is expressed in terms of the tensor H-functions. The numerical solutions are given for the Stokes parameters of the radiation for the case when the magnetic field is perpendicular to the surface. It is shown that the presence of the magnetic field may significantly decrease the albedo [ru

Primary radiation damage and disturbance in cell divisions

International Nuclear Information System (INIS)

Kim, Jin Kyu; Lee, Yun-Jong; Kim, Jae-Hun; Petin, Vladislav G.; Nili, Mohammad

2008-01-01

Survived cells from a homogeneous population exposed to ionizing radiation form various colonies of different sizes and morphology on a solid nutrient medium, which appear at different time intervals after irradiation. Such a phenomenon agrees well with the modern theory of microdosimetry and classical hit-and-target models of radiobiology. According to the hit-principle, individual cells exposed to the same dose of radiation are damaged in different manners. It means that the survived cells can differ in the content of sublethal damage (hits) produced by the energy absorbed into the cell and which is not enough to give rise to effective radiation damage which is responsible for cell killing or inactivation. In diploid yeast cells, the growth rate of cells from 250 colonies of various sizes appeared at different time intervals after irradiation with 600 Gy of gamma radiation from a 60 Co isotopic source was analyzed. The survival rate after irradiation was 20%. Based on the analyses results, it was possible to categorize the clones grown from irradiated cells according to the number of sub-lesions from 1 to 4. The clones with various numbers of sub-lesions were shown to be different in their viability, radiosensitivity, sensitivity to environmental conditions, and the frequency of recombination and respiratory deficient mutations. Cells from unstable clones exhibited an enhanced radiosensitivity, and an increased portion of morphologically changed cells, nonviable cells and respiration mutants, as well. The degree of expression of the foregoing effects was higher if the number of primary sublethal lesions was greater in the originally irradiated cell. Disturbance in cell division can be characterized by cell inactivation or incorrect distribution of mitochondria between daughter cells. Thus, the suggested methodology of identification of cells with a definite number of primary sublethal lesions will promote further elucidation of the nature of primary radiation

The Status of Radiation Damage Experiments

International Nuclear Information System (INIS)

Strachan, Denis M.; Scheele, Randall D.; Icenhower, Jonathan P.; Kozelisky, Anne E.; Sell, Richard L.; Legore, Virginia L.; Schaef, Herbert T.; O'Hara, Matthew J.; Brown, Christopher F.; Buchmiller, William C.

2001-01-01

Experiments have been on-going for about two years to determine the effects that radiation damage have on the physical and chemical properties of candidate titanate ceramics for the immobilization of plutonium. We summarize the results of these experiments in this document

Radiation damage effect on avalanche photodiodes

CERN Document Server

Baccaro, S; Cavallari, F; Da Ponte, V; Deiters, K; Denes, P; Diemoz, M; Kirn, Th; Lintern, A L; Longo, E; Montecchi, M; Musienko, Y; Pansart, J P; Renker, D; Reucroft, S; Rosi, G; Rusack, R; Ruuska, D; Stephenson, R; Torbet, M J

1999-01-01

Avalanche Photodiodes have been chosen as photon sensors for the electromagnetic calorimeter of the CMS experiment at the LHC. These sensors should operate in the 4T magnetic field of the experiment. Because of the high neutron radiation in the detector extensive studies have been done by the CMS collaboration on the APD neutron radiation damage. The characteristics of these devices after irradiation have been analized, with particular attention to the quantum efficiency and the dark current. The recovery of the radiation induced dark current has been studied carefully at room temperature and at slightly lower and higher temperatures. The temperature dependence of the defects decay-time has been evaluated.

Radiation damage in lithium orthosilicate

Energy Technology Data Exchange (ETDEWEB)

Noda, K.; Nakazawa, T.; Ishii, Y.; Fukai, K.; Watanabe, H. (Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment); Matsui, H.; Vollath, D.

1993-11-01

Radiation damage in lithium orthosilicate (Li[sub 4]SiO[sub 4]) and Al-doped Li[sub 4]SiO[sub 4] (Li[sub 3.7]Al[sub 0.1]SiO[sub 4]) irradiated with oxygen ions was studied with ionic conductivity measurements, Raman spectroscopy, Fourier transform infrared photo-acoustic spectroscopy (FT-IR PAS) and transmission electron microscopy. It was seen from the ionic conductivity measurements that lithium-ion vacancies were introduced as irradiation defects for Li-ions sites in both materials due to the irradiation. By the Raman spectroscopy, oxygen atoms in SiO[sub 4] tetrahedra were considered to be preferentially displaced due to the irradiation for Li[sub 4]SiO[sub 4], although only a decrease of the number of SiO[sub 4] tetrahedra occurred for Li[sub 3.7]Al[sub 0.1]SiO[sub 4] by displacement of both silicon and oxygen atoms. Decomposition of SiO[sub 4] tetrahedra and formation of some new phases having Si-O-Si and Si-O bonds were found to take place for both Li[sub 4]SiO[sub 4] and Li[sub 3.7]Al[sub 0.1]SiO[sub 4] by FT-IR PAS. In the electron microscopy, damage microstructure consisting of many voids or cavities and amorphization were observed for Li[sub 4]SiO[sub 4] irradiated with oxygen ions. The recovery behavior of radiation damage mentioned above was also investigated. (author).

Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

Directory of Open Access Journals (Sweden)

Vladimir A. Terekhov

2015-09-01

Full Text Available SOI (silicon-on-insulator structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques. Analysis of X-ray data has shown a noticeable transformation of the electron energy spectrum and local partial density of states distribution in valence and conduction bands in the strained silicon layer of the SOI structure. USXES Si L2,3 spectra analysis revealed a decrease of the distance between the L2v′ и L1v points in the valence band of the strained silicon layer as well as a shift of the first two maxima of the XANES first derivation spectra to the higher energies with respect to conduction band bottom Ec. At the same time the X-ray standing waves of synchrotron radiation (λ~12–20 nm are formed in the silicon-on-insulator structure with and without strains of the silicon layer. Moreover changing the synchrotron radiation grazing angle θ by 2° leads to a change of the electromagnetic field phase to the opposite.

Radiation damage in natural and synthetic halite. Progress report January 1992 - February 1993

International Nuclear Information System (INIS)

Garcia Celma, A.

1993-12-01

This report complements the information presented in the report of December 1992 regarding the research performed at the ECN on radiation damage in salt. It consists of two parts. The first part regards the amount of stored energy which can be developed by gamma-irradiation on different types of halite and considers both the effect of low dose rates in developing radiation damage, and the possible saturation level of radiation damage in natural halite. The second part presents a model to simulate radiation damage development which incorporates some extensions in the Jain-Lidiard model. Due to malfunction of the Small Angle Neutron Scattering installation, neither the previously reported results nor the newly obtained can be trusted and therefore are not reported here. These results regard the shape, size and size distribution of radiation damage defects. (orig.)

Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

International Nuclear Information System (INIS)

Dinh Nhu Thao

2008-01-01

We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

Semi-metallic polymers

DEFF Research Database (Denmark)

Bubnova, Olga; Khan, Zia Ullah; Wang, Hui

2014-01-01

Polymers are lightweight, flexible, solution-processable materials that are promising for low-cost printed electronics as well as for mass-produced and large-area applications. Previous studies demonstrated that they can possess insulating, semiconducting or metallic properties; here we report...... that polymers can also be semi-metallic. Semi-metals, exemplified by bismuth, graphite and telluride alloys, have no energy bandgap and a very low density of states at the Fermi level. Furthermore, they typically have a higher Seebeck coefficient and lower thermal conductivities compared with metals, thus being...... a Fermi glass to a semi-metal. The high Seebeck value, the metallic conductivity at room temperature and the absence of unpaired electron spins makes polymer semi-metals attractive for thermoelectrics and spintronics....

Impurity band Mott insulators: a new route to high Tc superconductivity

Directory of Open Access Journals (Sweden)

Ganapathy Baskaran

2008-01-01

Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

Contribution of endogenous and exogenous damage to the total radiation-induced damage in the bacterial spore

International Nuclear Information System (INIS)

Jacobs, G.P.; Samuni, A.; Czapski, G.

1980-01-01

Radical scavengers such as polyethylene glycol 4000 and bovine albumin have been used to define the contribution of exogenous and endogenous damage to the total radiation-induced damage in aqueous buffered suspensions of Bacillus pumilus spores. The results indicate that this damage in the bacterial spore is predominantly endogenous

Electrons, holes, and excitons in GaAs polytype quantum dots

Energy Technology Data Exchange (ETDEWEB)

Climente, Juan I.; Segarra, Carlos; Rajadell, Fernando; Planelles, Josep, E-mail: josep.planelles@uji.es [Departament de Química Física i Analítica, Universitat Jaume I, E-12080 Castelló (Spain)

2016-03-28

Single and multi-band k⋅p Hamiltonians for GaAs crystal phase quantum dots are used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing, and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorius et al., Nano Lett. 15, 2652 (2015)], it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al., Adv. Mater. 27, 2195 (2015)], including non-heavy hole ground state, strong hole spin admixture, and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

Growth and Functionality of Cells Cultured on Conducting and Semi-Conducting Surfaces Modified with Self-Assembled Monolayers (SAMs

Directory of Open Access Journals (Sweden)

Rajendra K. Aithal

2016-02-01

Full Text Available Bioengineering of dermal and epidermal cells on surface modified substrates is an active area of research. The cytotoxicity, maintenance of cell phenotype and long-term functionality of human dermal fibroblast (HDF cells on conducting indium tin oxide (ITO and semi-conducting, silicon (Si and gallium arsenide (GaAs, surfaces modified with self-assembled monolayers (SAMs containing amino (–NH2 and methyl (–CH3 end groups have been investigated. Contact angle measurements and infrared spectroscopic studies show that the monolayers are conformal and preserve their functional end groups. Morphological analyses indicate that HDFs grow well on all substrates except GaAs, exhibiting their normal spindle-shaped morphology and exhibit no visible signs of stress or cytoplasmic vacuolation. Cell viability analyses indicate little cell death after one week in culture on all substrates except GaAs, where cells died within 6 h. Cells on all surfaces proliferate except on GaAs and GaAs-ODT. Cell growth is observed to be greater on SAM modified ITO and Si-substrates. Preservation of cellular phenotype assessed through type I collagen immunostaining and positive staining of HDF cells were observed on all modified surfaces except that on GaAs. These results suggest that conducting and semi-conducting SAM-modified surfaces support HDF growth and functionality and represent a promising area of bioengineering research.

Radiation damage effects in solids special topic volume with invited peer reviewed papers only

CERN Document Server

Virk, Hardev Singh

2013-01-01

Public interest and concern about radiation damage effects has increased during recent times. Nuclear radiation proved to be a precursor for the study of radiation damage effects in solids. In general, all types of radiation, e.g. X-ray, gamma ray, heavy ions, fission fragments and neutrons produce damage effects in materials. Radiation damage latent tracks in solids find applications in nuclear and elementary particle physics, chemistry, radiobiology, earth sciences, nuclear engineering, and a host of other areas such as nuclear safeguards, virus counting, ion track filters, uranium exploration and archaeology. Radiation dosimetry and reactor shielding also involve concepts based on radiation damage in solids. This special volume consists of ten Chapters, including Review and Research Papers on various topics in this field.Physical scientists known to be investigating the effects of radiation on material were invited to contribute research and review papers on the areas of their specialty. The topics include...

Growth of metastable fcc Mn thin film on GaAs(001) and its electronic structure studied by photoemission with synchrotron radiation

International Nuclear Information System (INIS)

Chen Yan; Dong Guosheng; Zhang Ming

1995-01-01

The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400 K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured. A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interpret the experimental result

Alleviation of acute radiation damages by post-irradiation treatments

International Nuclear Information System (INIS)

Kurishita, A.; Ono, T.

1992-01-01

Radiation induced hematopoietic and gastro-intestinal damages in mice were tried to alleviate experimentally by post-treatment. Combined treatment of OK-432 and aztreonam clearly prevented the radiation induced sepsis and elevated the survival rate in mice; the survival was 80% in the OK-432 plus aztreonam group while it was 55% in the group treated with OK-432 alone and 0% with saline. Irsogladine maleate, an anti-ulcer drug, increased the survival rate of jejunal crypt stem cells with a clear dose-related trend. The D 0 for irsogladine maleate was 2.8 Gy although it was 2.3 Gy for saline, These findings suggest that some conventional drugs are effective for radiation induced hematopoietic and gastro-intestinal damages and the possibility that they can be applied for people exposed to radiation accidentally. (author)

Damage pattern as a function of radiation quality and other factors.

Science.gov (United States)

Burkart, W; Jung, T; Frasch, G

1999-01-01

An understanding of damage pattern in critical cellular structures such as DNA is an important prerequisite for a mechanistic assessment of primary radiation damage, its possible repair, and the propagation of residual changes in somatic and germ cells as potential contributors to disease or ageing. Important quantitative insights have been made recently on the distribution in time and space of critical lesions from direct and indirect action of ionizing radiation on mammalian cells. When compared to damage from chemicals or from spontaneous degradation, e.g. depurination or base deamination in DNA, the potential of even low-LET radiation to create local hot spots of damage from single particle tracks is of utmost importance. This has important repercussions on inferences from critical biological effects at high dose and dose rate exposure situations to health risks at chronic, low-level exposures as experienced in environmental and controlled occupational settings. About 10,000 DNA lesions per human cell nucleus and day from spontaneous degradation and chemical attack cause no apparent effect, but a dose of 4 Gy translating into a similar number of direct and indirect DNA breaks induces acute lethality. Therefore, single lesions cannot explain the high efficiency of ionizing radiation in the induction of mutation, transformation and loss of proliferative capacity. Clustered damage leading to poorly repairable double-strand breaks or even more complex local DNA degradation, correlates better with fixed damage and critical biological endpoints. A comparison with other physical, chemical and biological agents indicates that ionizing radiation is indeed set apart from these by its unique micro- and nano-dosimetric traits. Only a few other agents such as bleomycin have a similar potential to cause complex damage from single events. However, in view of the multi-stage mechanism of carcinogenesis, it is still an open question whether dose-effect linearity for complex

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

The Discrete Nature of the Coherent Synchrotron Radiation

Science.gov (United States)

Tammaro, Stefano; Pirali, Olivier; Roy, P.; Lampin, Jean François; Ducourneau, Gaël; Cuisset, Arnaud; Hindle, Francis; Mouret, Gaël

2015-06-01

Frequency Combs (FC) have radically changed the landscape of frequency metrology and high-resolution spectroscopy investigations extending tremendously the achievable resolution while increasing signal to noise ratio. Initially developed in the visible and near-IR spectral regions, the use of FC has been expanded to mid-IR, extreme ultra-violet and X-ray. Significant effort is presently dedicated to the generation of FC at THz frequencies. One solution based on converting a stabilized optical frequency comb using a photoconductive terahertz emitter, remains hampered by the low available THz power. Another approach is based on active mode locked THz quantum-cascade-lasers providing intense FC over a relatively limited spectral extension. Alternatively, we show that dense powerful THz FC is generated over one decade of frequency by coherent synchrotron radiation (CSR). In this mode, the entire ring behaves in a similar fashion to a THz resonator wherein electron bunches emit powerful THz pulses quasi-synchronously. The observed FC has been fully characterized and is demonstrated to be offset free. Based on these recorded specifications and a complete review of existing THz frequency comb, a special attention will be paid onto similarities and differences between them. Udem, Th., Holzwarth, H., Hänsch, T. W., Optical frequency metrology. Nature 416, 233-237 (2002) Schliesser, A., Picqué, N., Hänsch, T. W., Mid-infrared frequency combs. Nature Photon. 6, 440 (2012) Zinkstok, R. Th., Witte, S., Ubachs, W., Hogervorst, W., Eikema, K. S. E., Frequency comb laser spectroscopy in the vacuum-ultraviolet region. Physical Review A 73, 061801 (2006) Cavaletto, S. M. et al. Broadband high-resolution X-ray frequency combs. Nature Photon. 8, 520-523 (2014) Tani, M., Matsuura, S., Sakai, K., Nakashima, S. I., Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs. Applied Optics 36, 7853-7859 (1997) Burghoff, D. et al

Compilation of radiation damage test data. Pt. 2. Thermoset and thermoplastic resins, composite materials

International Nuclear Information System (INIS)

Tavlet, M.; Fontaine, A.; Schoenbacher, H.

1998-01-01

This catalogue summarizes radiation damage test data on thermoplastic and thermoset resins and composites. Most of them are epoxy resins used as insulator for magnet coils. Many results are also given for new engineering thermoplastics which can be used either for their electrical properties or for their mechanical properties. The materials have been irradiated either in a 60 Co source, up to integrated absorbed doses between 200 kGy and a few megagrays, at dose rates of the order of 1 Gy/s, or in a nuclear reactor at dose rates of the order of 50 Gy/s, up to doses of 100 MGy. The flexural strength, the deformation and the modulus of elasticity have been measured on irradiated and non-irradiated samples, according to the recommendations of the International Electrotechnical Commissions. The results are presented in the form of tables and graphs to show the effect of the absorbed dose on the measured properties. (orig.)

Compilation of radiation damage test data. Pt. 2. Thermoset and thermoplastic resins, composite materials

Energy Technology Data Exchange (ETDEWEB)

Tavlet, M; Fontaine, A; Schoenbacher, H

1998-05-18

This catalogue summarizes radiation damage test data on thermoplastic and thermoset resins and composites. Most of them are epoxy resins used as insulator for magnet coils. Many results are also given for new engineering thermoplastics which can be used either for their electrical properties or for their mechanical properties. The materials have been irradiated either in a {sup 60}Co source, up to integrated absorbed doses between 200 kGy and a few megagrays, at dose rates of the order of 1 Gy/s, or in a nuclear reactor at dose rates of the order of 50 Gy/s, up to doses of 100 MGy. The flexural strength, the deformation and the modulus of elasticity have been measured on irradiated and non-irradiated samples, according to the recommendations of the International Electrotechnical Commissions. The results are presented in the form of tables and graphs to show the effect of the absorbed dose on the measured properties. (orig.)

Semiconductor GaAs: electronic paramagnetic resonance new data; GaAs semi-isolant: nouvelles donnees de resonance paramagnetique electronique

Energy Technology Data Exchange (ETDEWEB)

Benchiguer, T.

1994-04-01

The topic of this study was to put to the fore, thanks to our electron spin resonance experiments, one charge transfer process, which was optically induced between the deep donor As{sup +}{sub G}a and the different acceptors, which were present in the material. We described these processes through a theoretical model, which we named charge transfer model. With this latter, we were able to trace a graph network, representing the As{sup +}{sub G}a concentration kinetics. Then we verified the compatibility of our model with one transport experiment. One experimental verification of our model were delivered, thanks to neutronic transmutation doping. The following stage was the study of defects, induced by thermal strains, to which the crystal was submitted during the cooling phase. At last we wanted to get round the non solved super hyperfine structure problem for GaAs by studying another III-V material for which she was resolved, namely gallium phosphide. (MML). 150 refs., 72 figs., 16 tabs., 3 annexes.

Potential radiation damage: Storage tanks for liquid radioactive waste

International Nuclear Information System (INIS)

Caskey, G.R. Jr.

1992-01-01

High level waste at SRS is stored in carbon steel tanks constructed during the period 1951 to 1981. This waste contains radionuclides that decay by alpha, beta, or gamma emission or are spontaneous neutronsources. Thus, a low intensity radiation field is generated that is capable of causing displacement damage to the carbon steel. The potential for degradation of mechanical properties was evaluated by comparing the estimated displacement damage with published data relating changes in Charpy V-notch (CVN) impact energy to neutron exposure. Experimental radiation data was available for three of the four grades of carbonsteel from which the tanks were constructed and is applicable to all four steels. Estimates of displacement damage arising from gamma and neutron radiation have been made based on the radionuclide contents for high level waste that are cited in the Safety Analysis Report (SAR) for the Liquid Waste Handling Facilities in the 200-Area. Alpha and beta emissions do not penetrate carbon steel to a sufficient depth to affect the bulk properties of the tank walls but may aggravate corrosion processes. The damage estimates take into account the source of the waste (F- or H-Area), the several types of tank service, and assume wateras an attenuating medium. Estimates of displacement damage are conservative because they are based on the highest levels of radionuclide contents reported in the SAR and continuous replenishment of the radionuclides

Temperature effects on radiation damage in plastic detectors

International Nuclear Information System (INIS)

Mendoza A, D.

1996-01-01

The objective of present work was to study the temperature effect on radiation damage registration in the structure of a Solid State Nuclear Track Detector of the type CR-39. In order to study the radiation damage as a function of irradiation temperature, sheets of CR-39 detectors were irradiated with electron beams, simulating the interaction of positive ions. CR-39 detectors were maintained at a constant temperature from room temperature up to 373 K during irradiation. Two techniques were used from analyzing changes in the detector structure: Electronic Paramagnetic Resonance (EPR) and Infrared Spectroscopy (IR). It was found by EPR analysis that the amount of free radicals decrease as irradiation temperature increases. The IR spectrums show yield of new functional group identified as an hydroxyl group (OH). A proposed model of interaction of radiation with CR-39 detectors is discussed. (Author)

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

PUMN: part I of the WINERY radiation damage computer simulation system

International Nuclear Information System (INIS)

Kuspa, J.P.; Edwards, D.R.; Tsoulfanidis, N.

1976-01-01

Results of computer work to simulate the response of crystalline materials to radiation are presented. To organize this and future work into a long range program of investigation, the WINERY Radiation Damage Computer Simulation System is proposed. The WINERY system is designed to solve the entire radiation damage problem from the incident radiation to the property changes which occur in the material, using a set of interrelated computer programs. One portion of the system, the PUMN program, has been used to obtain important radiation damage results with Fe 3 Al crystal. PUMN simulates the response of the atoms in a crystal to a knock-on atom. It yields the damage configuration of the crystal by considering the dynamic interaction of all the atoms of the computational cell, up to 1000 atoms. The PUMN program provides the WINERY system with results for the number of displacements, N/sub d/, due to knock-on atoms with various energies. The values of N/sub d/ for Fe 3 Al were obtained at two different energies, 100 and 500 eV, for a variety of initial directions. These values are to be used to form a table of results for use in WINERY

Radiation damage measurements on CZT drift strip detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl; Korsbech, Uffe C C

2003-01-01

from 2 x 10(8) to 60 x 10(8) p(+)/cm(2). Even for the highest fluences, which had a dramatic effect on the spectroscopic performance, we were able to recover the detectors after an appropriate annealing procedure. The radiation damage was studied as a function of depth inside the detector material...... with the proton dose. The radiation contribution to the electron trapping was found to obey the following relation: (mutau(e)(-1))(rad) = (2.5+/-0.2) x 10(-7) x Phi (V/cm)(2) with the proton fluence, Phi in p(+)/cm(2). The trapping depth dependence, however, did not agree well with the damage profile calculated...

Solar heating of GaAs nanowire solar cells.

Science.gov (United States)

Wu, Shao-Hua; Povinelli, Michelle L

2015-11-30

We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

Health effects of radiation damage

International Nuclear Information System (INIS)

Gasimova, K; Azizova, F; Mehdieva, K.

2012-01-01

Full text : A summary of the nature of radiactive contamination would be incomplete without some mention of the human health effects relatied to radioactivity and radioactive materials. Several excellent reviews at the variety of levels of detail have been written and should be consulted by the reader. Internal exposures of alpha and beta particles are important for ingested and inhaled radionuclides. Dosimetry models are used to estimate the dose from internally deposited radioactive particles. As mentioned above weighting parameters that take into account the radiation type, the biological half-life and the tissue or organ at risk are used to convert the physically absorbed dose in units of gray (or red) to the biologically significant committed equivalent dose and effective dose, measured in units of Sv (or rem). There is considerable controversy over the shape of the dose-response curve at the chronic low dose levels important for enviromental contamination. Proposed models include linear models, non-linear models and threshold models. Because risks at low dose must be extrapolated from available date at high doses, the shape of the dose-response curve has important implications for the environmental regulations used to protect the general public. The health effect of radiation damage depends on a combination of events of on the cellular, tissue and systemic levels. These lead to mutations and cellular of the irradiated parent cell. The dose level at which significant damage occurs depends on the cell type. Cells that reproduce rapidily, such as those found in bone marrow or the gastrointestinal tract, will be more sensitive to radiation than those that are longer lived, such as striated muscle or nerve cells. The effects of high radiation doses on an organ depends on the various cell types it contains

Effect of antioxidants on aging of nuclear plant cable insulation

International Nuclear Information System (INIS)

Reynolds, A.B.; Ray, J.W.; Wlodkowski, P.A.

1991-01-01

The effects of various antioxidants and antioxidant concentrations on the radiation and thermal stability of EPDM and XLPE polymers used for insulation of electric cable in nuclear power plants were measured. The objective was to determine if particular antioxidants could be identified as being especially effective for stabilization against radiation aging and combined thermal and radiation aging. Elongation to rupture was used as the measure of stability. Materials were irradiated to doses up to 2 MGy (200 Mrad) at a dose rate of 200 to 300 Gy/h in the Cobalt-60 Gamma Irradiation Facility at the University of Virginia. All of the antioxidants tested, which were known to provide excellent thermal stability, also provided good stability for radiation aging and combined thermal/radiation aging, although small differences between antioxidants were noted. No antioxidant or antioxidant combination was identified as being especially outstanding. Stabilization against radiation increased with increasing antioxidant concentration, but this trend was not observed for thermal aging. Damage from thermal and radiation aging was superposable. 9 refs., 16 figs., 12 tabs

Introduction of neutron metrology for reactor radiation damage

International Nuclear Information System (INIS)

Alberman, A.; Genthon, J.P.; Schneider, W.; Wright, S.B.; Zijp, W.L.

1979-01-01

The background of the procedures for determining irradiation parameters which are of interest in radiation damage experiments is described. The first two chapters outline the concept of damage functions and damage models. The next two chapters give information on methods to determine neutron fluences and neutron spectra. The fifth chapter gives a review of correlation data available for graphite and steels. The last chapter gives guidance how to report the relevant irradiation parameters. Attention is given to the role of the neutron spectrum in deriving values for damage fluence, energy transferred to the lattice, and number of displacements

Cost-effective computational method for radiation heat transfer in semi-crystalline polymers

Science.gov (United States)

Boztepe, Sinan; Gilblas, Rémi; de Almeida, Olivier; Le Maoult, Yannick; Schmidt, Fabrice

2018-05-01

This paper introduces a cost-effective numerical model for infrared (IR) heating of semi-crystalline polymers. For the numerical and experimental studies presented here semi-crystalline polyethylene (PE) was used. The optical properties of PE were experimentally analyzed under varying temperature and the obtained results were used as input in the numerical studies. The model was built based on optically homogeneous medium assumption whereas the strong variation in the thermo-optical properties of semi-crystalline PE under heating was taken into account. Thus, the change in the amount radiative energy absorbed by the PE medium was introduced in the model induced by its temperature-dependent thermo-optical properties. The computational study was carried out considering an iterative closed-loop computation, where the absorbed radiation was computed using an in-house developed radiation heat transfer algorithm -RAYHEAT- and the computed results was transferred into the commercial software -COMSOL Multiphysics- for solving transient heat transfer problem to predict temperature field. The predicted temperature field was used to iterate the thermo-optical properties of PE that varies under heating. In order to analyze the accuracy of the numerical model experimental analyses were carried out performing IR-thermographic measurements during the heating of the PE plate. The applicability of the model in terms of computational cost, number of numerical input and accuracy was highlighted.

Radiation effects

International Nuclear Information System (INIS)

Collings, E.W.

1986-01-01

An important cause of deterioration in superconducting magnets intended for high-energy physics and fusion-reactor applications is radiation damage. The present chapter deals chiefly with the effects of electron, proton, gamma and neutron irradiation on the properties of stabilized Ti-Nb-base composite superconductors. The authors examine the particle-accelerator environment, electron irradiation of Ti-Nb superconductor, proton irradiation of Ti-Nb superconductor and its stabilizer, and deuteron irradiation of Ti-Nb superconductor. A section discussing the fusion reactor environment in general is presented, and the two principal classes of fusion reactor based on the magnetic-confinement concept, namely the tokamak and the mirrormachine are examined. Also discussed is neutron irradiation of Cu/TiNb composite superconductors and critical current density of neutronirradiated Ti-Nb. Finally, radiation damage to stabilizer and insulating materials is described

X-radiation damage of hydrated lecithin membranes detected by real-time X-ray diffraction using wiggler-enhanced synchrotron radiation as the ionizing radiation source

International Nuclear Information System (INIS)

Caffrey, M.; Cornell Univ., Ithaca, NY

1984-01-01

Radiation damage of hydrated lecithin membranes brought about by exposure to wiggler-derived synchrotron radiation at 8.3 keV (1.5 A) is reported. Considerable damage was observed with exposures under 1 h at an incident flux density of 3 x 10 10 photons s -1 mm -2 , corresponding to a cumulative radiation dose of <= 10 MRad. Damage was so dramatic as to be initially observed while making real-time X-ray diffraction measurements on the sample. The damaging effects of 8.3 keV X-rays on dispersions of dipalmitoyllecithin and lecithin derived from hen egg yolk are as follows: (1) marked changes were noted in the X-ray diffraction behaviour, indicating disruption of membrane stacking. (2) Chemical breakdown of lecithin was observed. (3) The X-ray beam visibly damaged the sample and changed the appearance of the lipid dispersion, when viewed under the light microscope. Considering the importance of X-ray diffraction as a structural probe and the anticipated use of synchrotron radiation in studies involving membranes, the problem of radiation damage must be duly recognized. Furthermore, since dipalmitoyllecithin, the major lipid used in the present study, is a relatively stable compound, it is not unreasonable to expect that X-ray damage may be a problem with other less stable biological and non-biological materials. These results serve to emphasize that whenever a high intensity X-ray source is used, radiation damage can be a problem and that the sensitivity of the sample must always be evaluated under the conditions of measurement. (orig.)

Role of endothelium in radiation-induced normal tissue damages

International Nuclear Information System (INIS)

Milliat, F.

2007-05-01

More than half of cancers are treated with radiation therapy alone or in combination with surgery and/or chemotherapy. The goal of radiation therapy is to deliver enough ionising radiation to destroy cancer cells without exceeding the level that the surrounding healthy cells can tolerate. Unfortunately, radiation-induced normal tissue injury is still a dose limiting factor in the treatment of cancer with radiotherapy. The knowledge of normal tissue radiobiology is needed to determine molecular mechanisms involved in normal tissue pathogenic pathways in order to identify therapeutic targets and develop strategies to prevent and /or reduce side effects of radiation therapy. The endothelium is known to play a critical role in radiation-induced injury. Our work shows that endothelial cells promote vascular smooth muscle cell proliferation, migration and fibro-genic phenotype after irradiation. Moreover, we demonstrate for the first time the importance of PAI-1 in radiation-induced normal tissue damage suggesting that PAI-1 may represent a molecular target to limit injury following radiotherapy. We describe a new role for the TGF-b/Smad pathway in the pathogenesis of radiation-induced damages. TGF-b/Smad pathway is involved in the fibro-genic phenotype of VSMC induced by irradiated EC as well as in the radiation-induced PAI-1 expression in endothelial cells. (author)

Radiation damage resistance in mercuric iodide X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Patt, B E; Dolin, R C; Devore, T M; Markakis, J M [EG and G Energy Measurements, Inc., Goleta, CA (USA); Iwanczyk, J S; Dorri, N [Xsirius, Inc., Marina del Rey, CA (USA); Trombka, J [National Aeronautics and Space Administration, Greenbelt, MD (USA). Goddard Space Flight Center

1990-12-20

Mercuric iodide (HgI{sub 2}) radiation detectors show great potential as ambient-temperature solid-state detectors for X-rays, gamma rays and visible light, with parameters that are competitive with existing technologies. In a previous experiment, HgI{sub 2} detectors irradiated with 10 MeV protons/cm{sup 2} exhibited no damage. The 10 MeV protons represent only the low range of the spectrum of energies that are important. An experiment has been conducted at the Saturne accelerator facility at Saclay, France, to determine the susceptibility of these detectors to radiation damage by high-energy (1.5 GeV) protons. The detectors were irradiated to a fluence of 10{sup 8} protons/cm{sup 2}. This fluence is equivalent to the cosmic radiation expected in a one-year period in space. The resolution of the detectors was measured as a function of the integral dose. No degradation in the response of any of the detectors or spectrometers was seen. It is clear from this data that HgI{sub 2} has extremely high radiation-damage resistance, exceeding that of most other semiconductor materials used for radiation detectors. Based on the results shown to date, HgI{sub 2} detectors are suitable for applications in which they may be exposed to high integral dose levels. (orig.).

Issues of damage estimation under radiation emergency situation

International Nuclear Information System (INIS)

Volobuev, P.V.; Kozlova, N.I.

2005-01-01

The specificity of social, economical and ecological consequences of major radiation emergency situation is considered in the paper. The definitions and structure of direct and indirect damage under radiation emergency situation are given. The priority components of immediate expenses and those of long-term living on the contaminated territories are considered in the paper. (author)

Effect of Rosiglitazone on Radiation Damage in Bone Marrow Hemopoiesis

Science.gov (United States)

Benkő, Klára; Pintye, Éva; Szabó, Boglárka; Géresi, Krisztina; Megyeri, Attila; Benkő, Ilona

2008-12-01

To study radiobiological effects and drugs, which can modify radiation injury, has an importance if we would like to avoid harmful effects of radiation due to emergency situations or treat patients with malignant diseases by radiotherapy. During the long treatment schedules patients may be treated by not only anticancer but many other drugs because of accompanying diseases. These drugs may also modify radiobiological effects. Rosiglitazone pre-treatment proved to be myeloprotective and accelerated recovery of 5-fluorouracil-damaged bone marrow in our previous experiments. Our new studies are designed to evaluate whether rosiglitazone has similar beneficial effects in radiation-damaged hemopoiesis. Bone marrow damage was precipitated by total body irradiation (TBI) using single increasing doses (2-10 Gy) of γ—irradiation in groups of mice. Lethality was well correlated with damage in hemopoiesis measured by cellularity of bone marrow (LD50 values were 4.8 and 5.3 gray respectively). Rosiglitazone, an insulin-sensitizing drug, had no significant effect on bone marrow cellularity. Insulin resistance associated with obesity or diabetes mellitus type 2 is intensively growing among cancer patients requiring some kind of radiotherapy. Therefore it is important to know whether drugs used for their therapy can modify radiation effects.

Effect of Rosiglitazone on Radiation Damage in Bone Marrow Hemopoiesis

International Nuclear Information System (INIS)

Benko', Klara; Pintye, Eva; Szabo, Boglarka; Geresi, Krisztina; Megyeri, Attila; Benko, Ilona

2008-01-01

To study radiobiological effects and drugs, which can modify radiation injury, has an importance if we would like to avoid harmful effects of radiation due to emergency situations or treat patients with malignant diseases by radiotherapy. During the long treatment schedules patients may be treated by not only anticancer but many other drugs because of accompanying diseases. These drugs may also modify radiobiological effects. Rosiglitazone pre-treatment proved to be myeloprotective and accelerated recovery of 5-fluorouracil-damaged bone marrow in our previous experiments. Our new studies are designed to evaluate whether rosiglitazone has similar beneficial effects in radiation-damaged hemopoiesis. Bone marrow damage was precipitated by total body irradiation (TBI) using single increasing doses (2-10 Gy) of γ--irradiation in groups of mice. Lethality was well correlated with damage in hemopoiesis measured by cellularity of bone marrow (LD 50 values were 4.8 and 5.3 gray respectively). Rosiglitazone, an insulin-sensitizing drug, had no significant effect on bone marrow cellularity. Insulin resistance associated with obesity or diabetes mellitus type 2 is intensively growing among cancer patients requiring some kind of radiotherapy. Therefore it is important to know whether drugs used for their therapy can modify radiation effects.

Ionizing radiation, antioxidant response and oxidative damage: A meta-analysis.

Science.gov (United States)

Einor, D; Bonisoli-Alquati, A; Costantini, D; Mousseau, T A; Møller, A P

2016-04-01

One mechanism proposed as a link between exposure to ionizing radiation and detrimental effects on organisms is oxidative damage. To test this hypothesis, we surveyed the scientific literature on the effects of chronic low-dose ionizing radiation (LDIR) on antioxidant responses and oxidative damage. We found 40 publications and 212 effect sizes for antioxidant responses and 288 effect sizes for effects of oxidative damage. We performed a meta-analysis of signed and unsigned effect sizes. We found large unsigned effects for both categories (0.918 for oxidative damage; 0.973 for antioxidant response). Mean signed effect size weighted by sample size was 0.276 for oxidative damage and -0.350 for antioxidant defenses, with significant heterogeneity among effects for both categories, implying that ionizing radiation caused small to intermediate increases in oxidative damage and small to intermediate decreases in antioxidant defenses. Our estimates are robust, as shown by very high fail-safe numbers. Species, biological matrix (tissue, blood, sperm) and age predicted the magnitude of effects for oxidative damage as well as antioxidant response. Meta-regression models showed that effect sizes for oxidative damage varied among species and age classes, while effect sizes for antioxidant responses varied among species and biological matrices. Our results are consistent with the description of mechanisms underlying pathological effects of chronic exposure to LDIR. Our results also highlight the importance of resistance to oxidative stress as one possible mechanism associated with variation in species responses to LDIR-contaminated areas. Copyright © 2016 Elsevier B.V. All rights reserved.

Production of a nuclear radiation resistant and mechanically tough electrically insulating material

International Nuclear Information System (INIS)

Brechna, H.

1975-01-01

According to the invention, an electrically insulating material of high mechanical strength and resistance to nuclear radiation may be made of a hardenable plastic material coated on an inorganic supporting tissue. The synthetic resin serving as binder - duroplasts, e.g. epoxide resins, polyester resins or silicon resins - is heated, mixed with a catalyst, a wetting agent and a filler (and, if required, with 0.5-1.5 weight % thixotropic material) and coated, under reduced pressure (o.4 to 0.6 mm Hg), on the supporting tissue whose surface is cleaned before this by heating. It is then hardened. Hardening may also take place directly on the electric conductor to be insulated. One obtains a bubble-free wire coating. The inorganic supporting material is glas fibre tissue, also in combination with mica, while Al 2 O 3 , zirconium, zirconia, magnesium oxide, mica and silica (grain size 10-20 μ). The invention is illustrated by a number of examples. (UWI) [de

The influence of γ-irradiation cobalt 60 on electrical properties of undoped GaAs treated with hydrogen plasma

International Nuclear Information System (INIS)

Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Bumaj, Yu.A.; Ul'yashin, A.G.

1999-01-01

The influence of exposition to a hydrogen plasma (hydrogenation) on the electrical properties alteration under gamma-irradiation in bulk GaAs have been investigated. It is shown that crystals hydrogenation before irradiation leads to particularly passivation of electrically active defects that are responsible for carriers scattering and removing processes in irradiated crystals. Radiation defects thermostability in hydrogenated GaAs crystals is lower than that in non hydrogenated ones. The energetic levels position of main defect that effects on electrical properties alteration after irradiation in GaAs crystals was detected. It is equal to E D =E C -0,125±0,0005 eV

Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires

International Nuclear Information System (INIS)

Shu Haibo; Chen Xiaoshuang; Ding Zongling; Dong Ruibin; Lu Wei

2010-01-01

The mechanism of the preferential adsorption of Ga on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires is studied by using first-principles calculations within density functional theory. The calculated results show that Au preadsorption on GaAs(111)B surface significantly enhances the stability of the Ga adatom in comparison with the adsorption of Ga on clean GaAs(111)B surface. The stabilization of the Ga adatom is due to charge transfers from the Ga 4p and 4s states to the Au 6s and As 4p states. The number of Ga adatoms stabilized on GaAs(111)B surfaces depends on the size of surface Au cluster. The reason is that Au acted as an electron acceptor on GaAs(111)B surface assists the charge transfer of Ga adatoms for filling the partial unoccupied bands of GaAs(111)B surface. Our results are helpful to understand the growth of Au-assisted GaAs nanowires.

Linear accelerator with x-ray absorbing insulators

International Nuclear Information System (INIS)

Rose, P.H.

1975-01-01

Annular insulators for supporting successive annular electrodes in a linear accelerator have embedded x-ray absorbing shield structures extending around the accelerating path. The shield members are disposed to intercept x-ray radiation without disrupting the insulative effect of the insulator members. In preferred forms, the structure comprises a plurality of annular members of heavy metal disposed in an x-ray blocking array, spaced from each other by the insulating substance of the insulator member. (auth)

Radiation damage to histones

International Nuclear Information System (INIS)

Mee, L.K.; Adelstein, S.J.

1985-01-01

The damage to histones irradiated in isolation is being elaborated to aid the identification of the crosslinking sites in radiation-induced DNA-histone adducts. Histones are being examined by amino acid analysis to determine the destruction of residues and by polyacrylamide gel electrophoresis to delineate changes in conformation. For the slightly lysine-rich histone, H2A, a specific attack on selective residues has been established, the aromatic residues, tyrosine and phenylalanine, and the heterocyclic residue, histidine, being significantly destroyed. In addition, a significant increase in aspartic acid was found; this may represent a radiation product from scission of the ring in the histidine residues. The similarity of the effects on residues in nitrous oxide-saturated and nitrogen-saturated solutions suggests that OH . and e/sub aq//sup -/ are equally efficient and selective in their attack. On gel electrophoresis degradation of the histone H2A was found to be greatest for irradiations in nitrous oxide-saturated solutions, suggesting CH . is the most effective radical for producing changes in conformation; O/sub 2//sup -/ was essentially ineffective. Other histones are being examined for changes in amino acid composition, conformation, and for the formation of radiation products

Photoprotection beyond ultraviolet radiation--effective sun protection has to include protection against infrared A radiation-induced skin damage.

Science.gov (United States)

Schroeder, P; Calles, C; Benesova, T; Macaluso, F; Krutmann, J

2010-01-01

Solar radiation is well known to damage human skin, for example by causing premature skin ageing (i.e. photoageing). We have recently learned that this damage does not result from ultraviolet (UV) radiation alone, but also from longer wavelengths, in particular near-infrared radiation (IRA radiation, 760-1,440 nm). IRA radiation accounts for more than one third of the solar energy that reaches human skin. While infrared radiation of longer wavelengths (IRB and IRC) does not penetrate deeply into the skin, more than 65% of the shorter wavelength (IRA) reaches the dermis. IRA radiation has been demonstrated to alter the collagen equilibrium of the dermal extracellular matrix in at least two ways: (a) by leading to an increased expression of the collagen-degrading enzyme matrix metalloproteinase 1, and (b) by decreasing the de novo synthesis of the collagen itself. IRA radiation exposure therefore induces similar biological effects to UV radiation, but the underlying mechanisms are substantially different, specifically, the cellular response to IRA irradiation involves the mitochondrial electron transport chain. Effective sun protection requires specific strategies to prevent IRA radiation-induced skin damage. 2010 S. Karger AG, Basel.

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

International Nuclear Information System (INIS)

Ito, Kota; Nishikawa, Kazutaka; Iizuka, Hideo

2016-01-01

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO 2 ) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO 2 film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

Energy Technology Data Exchange (ETDEWEB)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo [Toyota Central Research and Development Labs, Nagakute, Aichi 480-1192 (Japan)

2016-02-01

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

Consequential late radiation damage in the skin in nasopharyngeal carcinoma

International Nuclear Information System (INIS)

Li Wei; Kong Ling; Zhang Youwang; Hu Chaosu; Wu Yongru

2008-01-01

Objective: To evaluate the relationship between early and late radiation damage in skin. Methods: 335 patients with nasopharyngeal carcinoma treated with radical radiotherapy were evaluated. 240 patients had lymph nodes in the neck at initial diagnosis. The median doses were 70 Gy (55-86 Gy) to the nasopharyngeal region by external beam radiotherapy. The median doses were 64 Gy (46-72 Gy) to the neck with lymph node metastases, 55 Gy (21-67 Gy) to the node-negative neck. 71 patients were treated with facial-neck fields, while 264 patients were treated with pre-auricular fields. Chemotherapy was given in 48 patients. According to the 1995 SOMA scales late radiation damage in the skin was evaluated. Results: The median time from the radiotherapy to follow up was 14 years (range, 5-38 years). 63 patients have grade 0 late radiation reactions in the neck skin, the grade 1,2, 3,4 late radiation reactions in the neck skin were 43.9% (147 patients), 20.9% (70 patients), 13.7% (46 patients) and 2.7% (9 patients), respectively. 44 patients had moist desquamation in the medical records. The grade 1,2,3,4 late radiation reactions in the neck skin were 41%, 23%, 30% and 5%, respectively in patients with moist desquamation, while in patients without moist desquamation, the corresponding rates were 44.3%, 20.6%, 11.3% and 2.4%, respectively. The difference were significant between these two groups by chi-square analysis(χ 2 =17.42, P=0.002). Furthermore, whether patients had positive lymph node in the neck or not, the size of facial-neck fields and higher doses to the neck had more severe late radiation reaction in the neck skin, while age, gender and chemotherapy failed to show any effects on the development of late radiation reactions in the neck skin. Conclusion: The severe early radiation damage in the skin possibly increases the late radiation damage in the neck skin. (authors)

Nonuniform radiation damage in permanent magnet quadrupoles.

Science.gov (United States)

Danly, C R; Merrill, F E; Barlow, D; Mariam, F G

2014-08-01

We present data that indicate nonuniform magnetization loss due to radiation damage in neodymium-iron-boron Halbach-style permanent magnet quadrupoles. The proton radiography (pRad) facility at Los Alamos uses permanent-magnet quadrupoles for magnifying lenses, and a system recently commissioned at GSI-Darmsdadt uses permanent magnets for its primary lenses. Large fluences of spallation neutrons can be produced in close proximity to these magnets when the proton beam is, intentionally or unintentionally, directed into the tungsten beam collimators; imaging experiments at LANL's pRad have shown image degradation with these magnetic lenses at proton beam doses lower than those expected to cause damage through radiation-induced reduction of the quadrupole strength alone. We have observed preferential degradation in portions of the permanent magnet quadrupole where the field intensity is highest, resulting in increased high-order multipole components.

Nonuniform radiation damage in permanent magnet quadrupoles

International Nuclear Information System (INIS)

Danly, C. R.; Merrill, F. E.; Barlow, D.; Mariam, F. G.

2014-01-01

We present data that indicate nonuniform magnetization loss due to radiation damage in neodymium-iron-boron Halbach-style permanent magnet quadrupoles. The proton radiography (pRad) facility at Los Alamos uses permanent-magnet quadrupoles for magnifying lenses, and a system recently commissioned at GSI-Darmsdadt uses permanent magnets for its primary lenses. Large fluences of spallation neutrons can be produced in close proximity to these magnets when the proton beam is, intentionally or unintentionally, directed into the tungsten beam collimators; imaging experiments at LANL’s pRad have shown image degradation with these magnetic lenses at proton beam doses lower than those expected to cause damage through radiation-induced reduction of the quadrupole strength alone. We have observed preferential degradation in portions of the permanent magnet quadrupole where the field intensity is highest, resulting in increased high-order multipole components

Nonuniform radiation damage in permanent magnet quadrupoles

Energy Technology Data Exchange (ETDEWEB)

Danly, C. R.; Merrill, F. E.; Barlow, D.; Mariam, F. G. [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States)

2014-08-15

We present data that indicate nonuniform magnetization loss due to radiation damage in neodymium-iron-boron Halbach-style permanent magnet quadrupoles. The proton radiography (pRad) facility at Los Alamos uses permanent-magnet quadrupoles for magnifying lenses, and a system recently commissioned at GSI-Darmsdadt uses permanent magnets for its primary lenses. Large fluences of spallation neutrons can be produced in close proximity to these magnets when the proton beam is, intentionally or unintentionally, directed into the tungsten beam collimators; imaging experiments at LANL’s pRad have shown image degradation with these magnetic lenses at proton beam doses lower than those expected to cause damage through radiation-induced reduction of the quadrupole strength alone. We have observed preferential degradation in portions of the permanent magnet quadrupole where the field intensity is highest, resulting in increased high-order multipole components.

Damage of DNA by radiation and it's recovery, 3

International Nuclear Information System (INIS)

Narita, Noboru; Matsuura, Tomio; Sato, Hiroyuki.

1974-01-01

The damage and recovery of DNA was investigated by the incorporation of thymine derivatives (DHT, I trans, II trans, cis and glycol) into exponentially growing Tetrahymena cells. The strain employed was Tetrahymena pyriformis, Variety I, mating type IV. It is well known that these thymine derivatives are induced in vivo by radiation. The in vivo damage of DNA induced by radiation, and its recovery, were confirmed experimentally by means of gradient separation of sucrose density and by analytical ultra centrifugation (UVC). The recovery of DNA, its excision repair and its recombinational repair were compared with the recovery of Bacillus subtilis whose recovery kinetics were already known. 1) The damage of DNA was more sensitive to glycol than to II trans and cis. On the other hand, DHT is not sensitive for breaking DNA strand. 2) In its recovery damaged DNA was no more sensitive to glycol than to hhp as was true for Bacillus subtilis. (author)

Applications of high order harmonic radiation to UVX-solids interaction: high excitation density in electronic relaxation dynamics and surface damaging

International Nuclear Information System (INIS)

De Grazia, M.

2007-12-01

The new sources of radiation in the extreme-UV (X-UV: 10-100 nm), which deliver spatially coherent, ultra-short and intense pulses, allow studying high flux processes and ultra-fast dynamics in various domains. The thesis work presents two applications of the high-order laser harmonics (HH) to solid state physics. In Part I, we describe the optimization of the harmonic for studies of X-UV/solids interaction. In Part II, we investigate effects of high excitation density in the dynamics of electron relaxation in dielectric scintillator crystals - tungstates and fluorides, using time-resolved luminescence spectroscopy. Quenching of luminescence at short time gives evidence of the competition between radiative and non-radiative recombination of self-trapped excitons (STE). The non-radiative channel is identified to mutual interaction of STE at high excitation density. In Part III, we study the X-UV induced damage mechanism in various materials, either conductor (amorphous carbon) or insulators (organic polymers, e.g., PMMA). In PMMA-Plexiglas, in the desorption regime (0.2 mJ/cm 2 , i.e., below damage threshold), the surface modifications reflect X-UV induced photochemical processes that are tentatively identified, as a function of dose: at low dose, polymer chain scission followed by the blow-up of the volatile, low-molecular fragments leads to crater formation; at high dose, cross-linking in the near-surface layer of remaining material leads to surface hardening. These promising results have great perspectives considering the performances already attained and planned in the next future in the development of the harmonic sources. (author)

Genomic damage in children accidentally exposed to ionizing radiation

DEFF Research Database (Denmark)

Fucic, A; Brunborg, G; Lasan, R

2007-01-01

During the last decade, our knowledge of the mechanisms by which children respond to exposures to physical and chemical agents present in the environment, has significantly increased. Results of recent projects and programmes focused on children's health underline a specific vulnerability of chil...... and efficient preventive measures, by means of a better knowledge of the early and delayed health effects in children resulting from radiation exposure....... of children to environmental genotoxicants. Environmental research on children predominantly investigates the health effects of air pollution while effects from radiation exposure deserve more attention. The main sources of knowledge on genome damage of children exposed to radiation are studies performed...... after the Chernobyl nuclear plant accident in 1986. The present review presents and discusses data collected from papers analyzing genome damage in children environmentally exposed to ionizing radiation. Overall, the evidence from the studies conducted following the Chernobyl accident, nuclear tests...

Hydration-annealing of chemical radiation damage in calcium nitrate

International Nuclear Information System (INIS)

Nair, S.M.K.; James, C.

1984-01-01

The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

Demonstration of Hybrid Multilayer Insulation for Fixed Thickness Applications

Science.gov (United States)

Johnson, Wesley; Fesmire, James; Heckle, Wayne

2015-01-01

Once on orbit, high performing insulation systems for cryogenic systems need just as good radiation (optical) properties as conduction properties. This requires the use of radiation shields with low conductivity spacers in between. By varying the height and cross-sectional area of the spacers between the radiation shields, the relative radiation and conduction heat transfers can be manipulated. However, in most systems, there is a fixed thickness or volume allocated to the insulation. In order to understand how various combinations of different multilayer insulation (MLI) systems work together and further validate thermal models of such a hybrid MLI set up, test data is needed. The MLI systems include combinations of Load Bearing MLI (LB-MLI) and traditional MLI. To further simulate the space launch vehicle case wherein both ambient pressure and vacuum environments are addressed, different cold-side thermal insulation substrates were included for select tests.

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Directory of Open Access Journals (Sweden)

Robert Kucharski

2017-06-01

Full Text Available GaN substrates grown by the ammonothermal method are analyzed by Fast Fourier Transformation Spectroscopy in order to study the impact of doping (both n- and p-type on their transparency in the near-infrared, mid-infrared, and terahertz spectral range. It is shown that the introduction of dopants causes a decrease in transparency of GaN substrates in a broad spectral range which is attributed to absorption on free carriers (n-type samples or dopant ionization (p-type samples. In the mid-infrared the transparency cut-off, which for a semi-insulating GaN is at ~7 µm due to an absorption on a second harmonic of optical phonons, shifts towards shorter wavelengths due to an absorption on free carriers up to ~1 µm at n ~ 1020 cm−3 doping level. Moreover, a semi-insulating GaN crystal shows good transparency in the 1–10 THz range, while for n-and p-type crystal, the transparency in this spectral region is significantly quenched below 1%. In addition, it is shown that in the visible spectral region n-type GaN substrates with a carrier concentration below 1018 cm−3 are highly transparent with the absorption coefficient below 3 cm−1 at 450 nm, a satisfactory condition for light emitting diodes and laser diodes operating in this spectral range.

Radio-oxidative membrane damage and its possible role as an indicator of radiation exposure

International Nuclear Information System (INIS)

Amit Kumar; Pandey, B.N.; Mishra, K.P.

2004-01-01

Cellular membranes have been recognized as a sensitive target in the mechanism of ionizing radiation-induced cell killing. In our laboratory, studies have been devoted to investigations on gamma radiation induced oxidative damage to model and cellular membrane damage by employing fluorescence and electron spin resonance (ESR) methods Considerable evidences has accumulated to suggest that radiation induced oxidative damage was related to apoptotic death of a variety of cells in culture. Radiation induced damage involving lipid peroxidation, altered bilayer fluidity, permeability changes and intracellular generated ROS have been evaluated by chemical and physical methods. Modification of damage by structural modulating agents such as cholesterol and antioxidants such as eugenol, ascorbic acid, ellagic acid, triphala have been extensively investigated. Generation of intracellular ROS in radiation stressed normal cell e.g. mouse thymocytes, tumor cells e.g. Ehrlich ascites cells and human cervical cell line were evaluated after exposure from low to moderate doses of α-radiation. Results suggest that modulation of intracellular ROS level may be an important approach to alter radio-cytotoxicity of cells. This presentation would describe results of our study together with an overview of free radical mediated oxidative damage to cellular membrane as an indicator of radiation exposure. (author)

Complex DNA Damage: A Route to Radiation-Induced Genomic Instability and Carcinogenesis

Directory of Open Access Journals (Sweden)

Ifigeneia V. Mavragani

2017-07-01

Full Text Available Cellular effects of ionizing radiation (IR are of great variety and level, but they are mainly damaging since radiation can perturb all important components of the cell, from the membrane to the nucleus, due to alteration of different biological molecules ranging from lipids to proteins or DNA. Regarding DNA damage, which is the main focus of this review, as well as its repair, all current knowledge indicates that IR-induced DNA damage is always more complex than the corresponding endogenous damage resulting from endogenous oxidative stress. Specifically, it is expected that IR will create clusters of damage comprised of a diversity of DNA lesions like double strand breaks (DSBs, single strand breaks (SSBs and base lesions within a short DNA region of up to 15–20 bp. Recent data from our groups and others support two main notions, that these damaged clusters are: (1 repair resistant, increasing genomic instability (GI and malignant transformation and (2 can be considered as persistent “danger” signals promoting chronic inflammation and immune response, causing detrimental effects to the organism (like radiation toxicity. Last but not least, the paradigm shift for the role of radiation-induced systemic effects is also incorporated in this picture of IR-effects and consequences of complex DNA damage induction and its erroneous repair.

Conformational variation of proteins at room temperature is not dominated by radiation damage

International Nuclear Information System (INIS)

Russi, Silvia; González, Ana; Kenner, Lillian R.; Keedy, Daniel A.; Fraser, James S.; Bedem, Henry van den

2017-01-01

Protein crystallography data collection at synchrotrons is routinely carried out at cryogenic temperatures to mitigate radiation damage. Although damage still takes place at 100 K and below, the immobilization of free radicals increases the lifetime of the crystals by approximately 100-fold. Recent studies have shown that flash-cooling decreases the heterogeneity of the conformational ensemble and can hide important functional mechanisms from observation. These discoveries have motivated increasing numbers of experiments to be carried out at room temperature. However, the trade-offs between increased risk of radiation damage and increased observation of alternative conformations at room temperature relative to cryogenic temperature have not been examined. A considerable amount of effort has previously been spent studying radiation damage at cryo-temperatures, but the relevance of these studies to room temperature diffraction is not well understood. Here, the effects of radiation damage on the conformational landscapes of three different proteins (T. danielli thaumatin, hen egg-white lysozyme and human cyclophilin A) at room (278 K) and cryogenic (100 K) temperatures are investigated. Increasingly damaged datasets were collected at each temperature, up to a maximum dose of the order of 10 7 Gy at 100 K and 10 5 Gy at 278 K. Although it was not possible to discern a clear trend between damage and multiple conformations at either temperature, it was observed that disorder, monitored by B-factor-dependent crystallographic order parameters, increased with higher absorbed dose for the three proteins at 100 K. At 278 K, however, the total increase in this disorder was only statistically significant for thaumatin. A correlation between specific radiation damage affecting side chains and the amount of disorder was not observed. Lastly, this analysis suggests that elevated conformational heterogeneity in crystal structures at room temperature is observed despite radiation

Design of offline measuring system for radiation damage effects on linear CCD

International Nuclear Information System (INIS)

Zhang Yong; Tang Benqi; Xiao Zhigang; Wang Zujun; Huang Fang; Huang Shaoyan

2004-01-01

The paper discusses the hardware design of offline measuring system for radiation damage effects on linear CCD. Some credible results were achieved by using this system. The test results indicate that the system is available for the study of the radiation damage effects on linear CCD. (authors)

Clustered DNA damages induced in human hematopoietic cells by low doses of ionizing radiation

Science.gov (United States)

Sutherland, Betsy M.; Bennett, Paula V.; Cintron-Torres, Nela; Hada, Megumi; Trunk, John; Monteleone, Denise; Sutherland, John C.; Laval, Jacques; Stanislaus, Marisha; Gewirtz, Alan

2002-01-01

Ionizing radiation induces clusters of DNA damages--oxidized bases, abasic sites and strand breaks--on opposing strands within a few helical turns. Such damages have been postulated to be difficult to repair, as are double strand breaks (one type of cluster). We have shown that low doses of low and high linear energy transfer (LET) radiation induce such damage clusters in human cells. In human cells, DSB are about 30% of the total of complex damages, and the levels of DSBs and oxidized pyrimidine clusters are similar. The dose responses for cluster induction in cells can be described by a linear relationship, implying that even low doses of ionizing radiation can produce clustered damages. Studies are in progress to determine whether clusters can be produced by mechanisms other than ionizing radiation, as well as the levels of various cluster types formed by low and high LET radiation.

Relation of radiation damage of metallic solids to electronic structure. Pt. 5

International Nuclear Information System (INIS)

Shalaev, A.M.; Adamenko, A.A.

1977-01-01

The problem of relating a damage in metal solids to the parameters of radiation fluxes and the physical nature of a target is considered. Basing upon experimental and theoretical investigations into the processes of interaction of particle fluxes with solids, the following conclusions have been reached. Threshold energy of ion displacement in the crystal lattice of a metal solid is dependent on the energy of a bombarding particle, which is due to ionization and electroexcitation stimulated by energy transfer from a fast particle to a system of collectivized electrons. The rate of metal solid damage by radiation depends on the state of the crystal lattice, in particular on its defectness. Variations of local electron density in the vicinity of a defect are related with changing thermodynamic characteristics of radiation-induced defect formation. A type of atomic bond in a solid affects the rate of radiation damage. The greatest damage occurs in materials with a covalent bond

In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001)

International Nuclear Information System (INIS)

Bruhn, Thomas; Ewald, Marcel; Fimland, Bjørn-Ove; Kneissl, Michael; Esser, Norbert; Vogt, Patrick

2011-01-01

We report on the characterization of sub-monolayers of pyrrole adsorbed on Ga-rich GaAs(001) surfaces. The interfaces were characterized by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and reflectance anisotropy spectroscopy (RAS) in a spectral range between 1.5 and 8 eV. The adsorption of pyrrole on Ga-rich GaAs(001) modifies the RAS spectrum of the clean GaAs surface significantly at the surface transitions at 2.2 and 3.5 eV indicating a chemisorption of the molecules. By the help of transients at these surface transitions during the adsorption process, we were able to prepare different molecular coverages from a sub-monolayer up to a complete molecular layer. The different coverages of pyrrole were imaged by STM and electronically characterized by STS. The measurements reveal that the adsorbed molecules electronically insulate the surface and indicate the formation of new interface states around −3.5 and +4.2 eV. The RAS measurements in the UV region show new anisotropies in the spectral range of the optical transitions of the adsorbed pyrrole molecules. Our measurements demonstrate the potential of optical and electronic spectroscopy methods for the characterization of atomically thin molecular layers on semiconductor surfaces allowing a direct access to the properties of single adsorbed molecules.

Effect of electric field in the characterization of pultruded GFRP boron-free composite insulator for the extra high voltage by the ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Fujiwara, Hissae; Silva Junior, Edmilson Jose; Shinohara, Armando Hideki [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Xavier, Gustavo Jose Vasconcelos [CHESF, Recife, PE (Brazil); Costa, Edson Guedes [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Lott Neto, Henrique Batista Duffles Teixeira; Britto, Paulo Roberto Ranzan; Fontan, Marcio A.B. [Sistema de Transmissao do Nordeste S.A., Recife, PE (Brazil)

2016-07-01

Full text: The pultruded boron-free glass fiber reinforced polymer (GFRP) composite has been widely used material for the electrical insulators in the high, extra and ultra high voltage overhead lines worldwide. In terms of design, the composite insulator has a highly complex geometry and large size. Aging of materials begin as soon as the insulators start their operation due to the strong electric field, mechanical load due to the weight of conductor cables, environment, corona discharge, generation of acids, and as a result, GFRP can fail mechanically by the stress corrosion crack (SCC) and electrical breakdown known as flashover. In order to mitigate the mechanical and electrical failures, the insulators in the field are frequently monitored by visual inspection, infrared thermography, UV detection, variation of measurement of distribution of electric field variation. However, new technologies for characterization and inspection of the composite insulator in the field are required for reliable operation. Imaging characterization using ionizing radiation (X-ray or g-ray) is an interesting technique, however, it can reduce drastically breakdown voltage due to the Townsend discharge, which free electrons are accelerated by an electric field, collide with gas molecules of air, and free additional electrons resulting in an avalanche multiplication that allows an electrical conduction through the air. In this study, in order to evaluate the potential application of ionization radiation for characterization of composite insulator under electric field, testing were conducted in high voltage laboratory by applying voltages up to 640 kV and varying radiation area of the composite insulator. As a result, even though there was an occurrence of flame on Imaging Plate (IP) detector case when it was located near the phase, corona discharge, but no breakdown discharge (flashover) occurred and high quality imaging of radiography could be obtained when X-ray source was employed

Radiaton-resistant electrical insulation on the base of cement binders

International Nuclear Information System (INIS)

Afanas'ev, V.V.; Korenevskij, V.V.; Pisachev, S.Yu.

1985-01-01

The problems of designing radiation-resistant electrical insulations on the base of BATs and Talum cements for the UNK magnets operating under constant and pulse modes are discussed. The data characterizing dielectrical ad physico-mechanical properties of 25 various compositions are given. Two variants of manufacturing coils are considered: solid and with the use of asbestos tape impregnated with aluminous cement solution. The data obtained testify to the fact that the advantages of insulation on Talum cement are raised radiation resistance, high strength (particularly compression strength), weak porosity, high elasticity modulus and high thermal conductivity. BATs cement insulation is characterized by high radiation resistance, absence of shrinkage, rather low elasticity modulus and high dielectrical characteristics under normal conditions. The qualities of the solid insulation variant are its high technological effectiveness and posibility to fill up the spaces of complex configuration. In case of using as solid insulation Talum cement, however special measures for moisture removal are required. The advantage of insulation on the base of the asbestos tape is its reliability. For complex configuration magnets, however to realize is such insulation somewhat difficult

Radiation damage of pixelated photon detector by neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Nakamura, Isamu [KEK, 1-1 Oho Tsukuba 305-0801 (Japan)], E-mail: isamu.nakamura@kek.jp

2009-10-21

Radiation Damage of Pixelated Photon Detector by neutron irradiation is reported. MPPC, one of PPD or Geiger-mode APD, developed by Hamamatsu Photonics, is planned to be used in many high energy physics experiments. In such experiments radiation damage is a serious issue. A series of neutron irradiation tests is performed at the Reactor YAYOI of the University of Tokyo. MPPCs were irradiated at the reactor up to 10{sup 12}neutron/cm{sup 2}. In this paper, the effect of neutron irradiation on the basic characteristics of PPD including gain, noise rate, photon detection efficiency is presented.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

Energy Technology Data Exchange (ETDEWEB)

Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

2016-03-14

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

International Nuclear Information System (INIS)

Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

2016-01-01

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

Science.gov (United States)

Wang, Jingang; Chong, Junlong; Yang, Jie

2014-10-01

Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

Study of radiation damage in solid materials by simulating physical processes

International Nuclear Information System (INIS)

Pinnera Hernandez, Ibrahin

2006-12-01

Nowadays the damage induced by different types of radiation in advanced materials is widely studied. Especially those materials involved in experiments and developing of new technologies, such as high critical temperature superconductors, semiconductors, metals. These materials are the basis constituents of radiation detectors, particle accelerators, etc. One way of studying this kind of damage is through the determination of the displacements per atom (dpa) induced by the radiation in these materials. This magnitude is one of the measures of the provoked radiation damage. On this direction, the present thesis deals with the study of two types of materials through mathematical simulation of physical processes taking place in the radiation transport. Ceramic superconductor Yba 2 Cu 3 O 7-x and metal Fe are the selected materials. The energy range of the incident gamma radiation goes from a few keV to 15 MeV. The MCNPX version 2.6b is used to determine the physical magnitudes required to calculate the distribution of displacements per atom within these materials, using an algorithm implemented for this purpose. Finally, a comparison between the obtained dpa profiles and the corresponding of energy deposition by radiation in these same materials and the possible linear dependence between both quantities is discussed. (Author)

Spatial modulation of the Fermi level by coherent illumination of undoped GaAs

Science.gov (United States)

Nolte, D. D.; Olson, D. H.; Glass, A. M.

1989-11-01

The Fermi level in undoped GaAs has been modulated spatially by optically quenching EL2 defects. The spatial gradient of the Fermi level produces internal electric fields that are much larger than fields generated by thermal diffusion alone. The resulting band structure is equivalent to a periodic modulation-doped p-i-p structure of alternating insulating and p-type layers. The internal fields are detected via the electro-optic effect by the diffraction of a probe laser in a four-wave mixing geometry. The direct control of the Fermi level distinguishes this phenomenon from normal photorefractive behavior and introduces a novel nonlinear optical process.