Radiation hardness of CMS pixel barrel modules

CERN Document Server

Rohe, T; Erdmann, W; Kästli, H C; Khalatyan, S; Meier, B; Radicci, V; Sibille, J

2010-01-01

Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6E14 Neq and with 21 GeV protons at CERN up to 5E15 Neq. After irradiation the response of the system to beta particles from a Sr-90 source w...

Impact of aging on radiation hardness

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Winokur, P.S.; Fleetwood, D.M.

1997-01-01

Burn-in effects are used to demonstrate the potential impact of thermally activated aging effects on functional and parametric radiation hardness. These results have implications on hardness assurance testing. Techniques for characterizing aging effects are proposed

Radiation hardness of CMS pixel barrel modules

International Nuclear Information System (INIS)

Rohe, T.; Bean, A.; Erdmann, W.; Kaestli, H.-C.; Khalatyan, S.; Meier, B.; Radicci, V.; Sibille, J.

2010-01-01

Pixel detectors are used in the innermost part of the multi purpose experiments at the LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has been thoroughly tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6x10 14 n eq /cm 2 and with 21 GeV protons at CERN up to 5x10 15 n eq /cm 2 . After irradiation the response of the system to beta particles from a 90 Sr source was measured to characterise the charge collection efficiency of the sensor. Radiation induced changes in the readout chip were also measured. The results show that the present pixel modules can be expected to be still operational after a fluence of 2.8x10 15 n eq /cm 2 . Samples irradiated up to 5x10 15 n eq /cm 2 still see the beta particles. However, further tests are needed to confirm whether a stable operation with high particle detection efficiency is possible after such a high fluence.

Development of radiation hard components for remote maintenance

International Nuclear Information System (INIS)

Oka, Kiyoshi; Obara, Kenjiro; Kakudate, Satoshi; Tominaga, Ryuichiro; Akada, Tamio; Morita, Hirosuke.

1997-01-01

In International Thermonuclear Experimental Reactor (ITER), in-vessel remote-handling is inevitably required to assemble and maintain activated in-vessel components due to D-T operation. The components of the in-vessel remote-handling system must have sufficient radiation hardness to allow for operation under an intense gamma-ray radiation of over 30 kGy/h for periods up to more than 1,000 hours. To this end, extensive irradiation tests and quality improvements including the optimization of material composition have been conducted through the ITER R and D program in order to develop radiation hard components which satisfy radiation doses from 10 MGy to 100 MGy at the dose rate of 10 kGy/h. This paper outlines the latest status of the radiation hard component development that has been conducted as the Japan Home Team's contribution to ITER. The remote-handling components tested are categorized into either robotics, viewing systems or common components. The irradiation tests include commercial base products for screening both modified and newly developed products to improve their radiation hardness. (author)

Development of radiation hardness components for ITER remote maintenance

Energy Technology Data Exchange (ETDEWEB)

Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment; Yagi, Toshiaki; Morita, Yousuke

1998-04-01

In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

Development of radiation hardness components for ITER remote maintenance

International Nuclear Information System (INIS)

Obara, Kenjiro; Kakudate, Satoshi; Oka, Kiyoshi; Ito, Akira; Yagi, Toshiaki; Morita, Yousuke

1998-01-01

In the ITER, in-vessel remote handling is required to assemble and maintain in-vessel components in DT operations. Since in-vessel remote handling systems must operate under intense gamma ray radiation exceeding 30 kGy/h, their components must have sufficiently high radiation hardness to allow maintenance long enough in ITER in-vessel environments. Thus, extensive radiation tests and quality improvement, including optimization of material compositions, have been conducted through the ITER R and D program to develop radiation hardness components that meet radiation doses from 10 to 100 MGy at 10 kGy/h. This paper presents the latest on radiation hardness component development conducted by the Japan Home Team as a contribution to the ITER. The remote handling components tested are categorized for use in robotic or viewing systems, or as common components. Radiation tests have been conducted on commercially available products for screening, on modified products, and on new products to improve the radiation hardness. (author)

Effects of plasma-deposited silicon nitride passivation on the radiation hardness of CMOS integrated circuits

International Nuclear Information System (INIS)

Clement, J.J.

1980-01-01

The use of plasma-deposited silicon nitride as a final passivation over metal-gate CMOS integrated circuits degrades the radiation hardness of these devices. The hardness degradation is manifested by increased radiation-induced threshold voltage shifts caused principally by the charging of new interface states and, to a lesser extent, by the trapping of holes created upon exposure to ionizing radiation. The threshold voltage shifts are a strong function of the deposition temperature, and show very little dependence on thickness for films deposited at 300 0 C. There is some correlation between the threshold voltage shifts and the hydrogen content of the PECVD silicon nitride films used as the final passivation layer as a function of deposition temperature. The mechanism by which the hydrogen contained in these films may react with the Si/SiO 2 interface is not clear at this point

Applications of Robust, Radiation Hard AlGaN Optoelectronic Devices in Space Exploration and High Energy Density Physics

Energy Technology Data Exchange (ETDEWEB)

Sun, K.

2011-05-04

This slide show presents: space exploration applications; high energy density physics applications; UV LED and photodiode radiation hardness; UV LED and photodiode space qualification; UV LED AC charge management; and UV LED satellite payload instruments. A UV LED satellite will be launched 2nd half 2012.

On the forces acting on radiating charge

International Nuclear Information System (INIS)

Khachatrian, B.V.

2001-01-01

It is shown that the force acting on a radiating charge is stipulated by two reasons- owing to exchange of a momentum between the radiating charge and electromagnetic field of radiation, and also between the charge and field accompanying the charge. 7 refs

Radiation hardness studies for DEPFETs in Belle II

International Nuclear Information System (INIS)

Ritter, Andreas

2014-01-01

The study of CP violation requires dedicated detectors and accelerators. At KEK, the High Energy Accelerator Research Organization located in Tsukuba, Japan, an upgrade of the present accelerator KEKB and its detector is in progress. For this new Belle II detector, a new vertex system will be installed, consisting of a silicon strip detector (SVD) and a pixel detector (PXD). The PXD exhibits eight million pixels, each of them made of Depleted p-channel Field Effect Transistors (DEPFETs). During the operation of Belle II various machine- as well as luminosity-related background processes affect the device performance of the DEPFET through radiation damage. As a Metal-Oxide-Semiconductor (MOS) device, the DEPFET is affected by ionizing radiation damage as well as by damages to the silicon bulk itself. The major part of the radiation damage has its origin in the creation of electrons and positrons near the interaction point. Therefore, the hardness factor of electrons of relevant energy was investigated in this work. With this quantity the damage by electrons could be compared to the damage inflicted by neutrons. Neutron irradiations were performed with DEPFETs and related silicon material. The effects of leakage current increase and type inversion were studied. As the electron hardness investigation indicates, the bulk damage done to the DEPFET is small in comparison to the impact on the silicon dioxide layer of the device. Ionizing radiation results in a build-up of oxide charge, thus changing the device characteristics. Especially the threshold voltage of the DEPFET is shifted to more negative values. This shift has to be compensated during the operation of Belle II and is limited by device and system constraints, thus an overall small shift is desired. The changes in the device characteristics were investigated for the two gate electrodes of the DEPFET with respect to their biasing and production related issues. With an additional layer of silicon nitride and a

Radiation hard memory cell and array thereof

International Nuclear Information System (INIS)

Gunckel, T.L. II; Rovell, A.; Nielsen, R.L.

1978-01-01

A memory cell configuration that is implemented to be relatively hard to the adverse effects of a nuclear event is discussed. The presently disclosed memory cell can be interconnected with other like memory cells to form a high speed radiation hard register file. Information is selectively written into and read out of a memory cell comprising the register file, which memory cell preserves previously stored data without alteration in the event of exposure to high levels of nuclear radiation

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

BaYb2F8, a new radiation hard Cherenkov radiator for electromagnetic calorimeters

International Nuclear Information System (INIS)

Aseev, A.A.; Devitsin, E.G.; Komar, A.A.; Kozlov, V.A.; Hovsepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

1992-01-01

Radiation hardness and optical properties of a new Cherenkov radiator, heavy fluoride BaYb 2 F 8 doped with various elements, have been studied. The above mentioned crystal has the density of 7 g/cm 3 , the radiation length is 1.28 cm and the Moliere radius 2.44 cm. High radiation hardness has been demonstrated for BaYb 2 F 8 doped with Tm, Pr, Tb. (orig.)

The underlying event in hard scattering processes

International Nuclear Information System (INIS)

Field, R.

2002-01-01

The authors study the behavior of the underlying event in hard scattering proton-antiproton collisions at 1.8 TeV and compare with the QCD Monte-Carlo models. The underlying event is everything except the two outgoing hard scattered jets and receives contributions from the beam-beam remnants plus initial and final-state radiation. The data indicate that neither ISAJET or HERWIG produce enough charged particles (with p T > 0.5 GeV/c) from the beam-beam remnant component and that ISAJET produces too many charged particles from initial-state radiation. PYTHIA which uses multiple parton scattering to enhance the underlying event does the best job describing the data

Radiation effects in charge coupled devices

International Nuclear Information System (INIS)

Williams, R.A.; Nelson, R.D.

1975-01-01

Charge coupled devices (CCD s) exhibit a number of advantages (low cost, low power, high bit density) in their several applications (serial memories, imagers, digital filters); however, fairly elementary theoretical considerations indicate that they will be very vulnerable to permanent radiation damage, by both neutrons and ionizing radiation, and to transient upset by pulsed ionizing radiation. Although studies of permanent ionizing-radiation damage in CCD's have been reported, little information has been published concerning their overall nuclear radiation vulnerability. This paper presents a fairly comprehensive experimental study of radiation effects in a 256-cell surface-channel, CCD shift-register. A limited amount of similar work is also presented for a 128-cell surface-channel device and a 130 cell peristaltic CCD shift register. The radiation effects phenomena discussed herein, include transient-ionizing-radiation responses, permanent ionizing- radiation damage to transfer efficiency, charge-carrying capacity and input transfer gate bias, and neutron damage to storage time--determined from dark current and charge-up time measurements

Interaction of slow highly charged ions with hard dental tissue: studies of fluoride uptake and reminalization efficacy

International Nuclear Information System (INIS)

Daskalova, A; Kasperski, G; Rousseau, P; Domaracka, A; Lawicki, A

2014-01-01

TOF-SIMS mass spectroscopy data are presented on ion irradiation of hard dental tissue using a beam of 129 Xe 20+ (15 kV) ions delivered in the ARIBE facility by an ECR source. The investigation was focused on the mass distribution of the fragment ions. A comparison is made between the mass spectra from hard dental tissue treated by olaflur-(C 27 H 60 F 2 N 2 O 3 ) and untreated hard dental tissue obtained under irradiation by low-energy highly-charged ions (HCIs). We found significant differences between the mass spectra of enamel after introducing amine fluoride (olaflur) and the mass spectra of pure untreated enamel. Further, we separated out the effects caused by radiation induced in the tooth enamel from those induced in dentin, which has not been performed before. In order to conduct a further detailed analysis, it is necessary to extend the research scope to include the influence of fluorine compounds on enamel and dentin.

Effect of gamma radiation on micromechanical hardness of lead-free solder joint

Energy Technology Data Exchange (ETDEWEB)

Paulus, Wilfred [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor (Malaysia); Rahman, Irman Abdul; Jalar, Azman; Kamil, Insan; Bakar, Maria Abu [Universiti Kebangsaan Malaysia, Bangi, 43600 Kajang, Selangor (Malaysia); Yusoff, Wan Yusmawati Wan [Universiti Pertahanan Nasional Malaysia, Kem Sg. Besi, 57000 Kuala Lumpur (Malaysia)

2015-09-25

Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

Testing the radiation hardness of lead tungstate scintillating crystals

CERN Document Server

Shao, M; Li Chuan; Chen, H; Xu, Z Z; Wang, Z M

2000-01-01

Large Hadron Collider operation will produce a high radiation background. PbWO/sub 4/ crystals are selected as scintillators for the CMS electromagnetic calorimeter. To reach the precise requirement for energy measurements, a strict requirement for the radiation hardness is needed. In this paper, we present a method for evaluating the radiation hardness and its measurement. Results for several full size (23 cm length) lead tungstate crystals under Co/sup 60/ gamma - ray irradiation are given, investigating the light yield loss and its longitudinal uniformity. (8 refs).

Development of radiation hard components for ITER blanket remote handling system

Energy Technology Data Exchange (ETDEWEB)

Saito, Makiko, E-mail: saito.makiko@jaea.go.jp; Anzai, Katsunori; Maruyama, Takahito; Noguchi, Yuto; Ueno, Kenichi; Takeda, Nobukazu; Kakudate, Satoshi

2016-11-01

Highlights: • Clarify the components that will degrade by gamma ray irradiation. • Perform the irradiation tests to BRHS components. • Optimize the materials to increase the radiation hardness. - Abstract: The ITER blanket remote handling system (BRHS) will be operated in a high radiation environment (250 Gy/h max.) and must stably handle the blanket modules, which weigh 4.5 t and are more than 1.5 m in length, with a high degree of position and posture accuracy. The reliability of the system can be improved by reviewing the failure events of the system caused by high radiation. A failure mode and effects analysis (FMEA) identified failure modes and determined that lubricants, O-rings, and electric insulation cables were the dominant components affecting radiation hardness. Accordingly, we tried to optimize the lubricants and cables of the AC servo motors by using polyphenyl ether (PPE)-based grease and polyether ether ketone (PEEK), respectively. Materials containing radiation protective agents were also selected for the cable sheaths and O-rings to improve radiation hardness. Gamma ray irradiation tests were performed on these components and as a result, a radiation hardness of 8 MGy was achieved for the AC servo motors. On the other hand, to develop the radiation hardness and BRHS compatibility furthermore, the improvement of materials of cable and O ring were performed.

Integration of Radiation-Hard Magnetic Random Access Memory with CMOS ICs

CERN Document Server

Cerjan, C J

2000-01-01

The research undertaken in this LDRD-funded project addressed the joint development of magnetic material-based nonvolatile, radiation-hard memory cells with Sandia National Laboratory. Specifically, the goal of this project was to demonstrate the intrinsic radiation-hardness of Giant Magneto-Resistive (GMR) materials by depositing representative alloy combinations upon radiation-hardened silicon-based integrated circuits. All of the stated goals of the project were achieved successfully. The necessary films were successfully deposited upon typical integrated circuits; the materials retained their magnetic field response at the highest radiation doses; and a patterning approach was developed that did not degrade the as-fabricated properties of the underlying circuitry. These results establish the feasibility of building radiation-hard magnetic memory cells.

Radiation hardness of new Kuraray double cladded optical fibers

International Nuclear Information System (INIS)

Bedeschi, F.; Menzione, A.; Budagov, Yu.; Chirikov-Zorin, I.; Solov'ev, A.; Turchanovich, L.; Vasil'chenko, V.

1996-01-01

The radiation hardness of the new plastic scintillating and clear fibers irradiated by 137 Cs γ-flux and by pulsed reactor fast neutrons were investigated. All the studied fibers were of S-type (with S=70) and had a double cladding. Optical fibers degradation study after irradiation shows that the level of radiation hardness lower that what is expected from results of previous studies. 9 refs., 6 figs

Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons

Energy Technology Data Exchange (ETDEWEB)

Šagátová, Andrea, E-mail: andrea.sagatova@stuba.sk [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia); Zaťko, Bohumír; Dubecký, František [Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04 Bratislava (Slovakia); Ly Anh, Tu [Faculty of Applied Science, University of Technology VNU HCM, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Nečas, Vladimír; Sedlačková, Katarína; Pavlovič, Márius [Institute of Nuclear and Physical Engineering, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Fülöp, Marko [University Centre of Electron Accelerators, Slovak Medical University, Ku kyselke 497, 911 06 Trenčín (Slovakia)

2017-02-15

Highlights: • Radiation hardness of SI GaAs detectors against gamma-rays, neutrons and electrons was compared. • Good agreement was achieved between the experimental results and displacement damage factor of different types of radiation. • CCE and FWHM first slightly improved (by 1–8%) and just then degraded with the cumulative dose. • An increase of detection efficiency with cumulative dose was observed. - Abstract: Radiation hardness of semi-insulating GaAs detectors against {sup 60}Co gamma-rays, fast neutrons and 5 MeV electrons was compared. Slight improvements in charge collection efficiency (CCE) and energy resolution in FWHM (Full Width at Half Maximum) were observed at low doses with all kinds of radiation followed by their degradation. The effect occurred at a dose of about 10 Gy of neutrons (CCE improved by 1%, FWHM by 5% on average), at 1 kGy of electrons (FWHM decreased by 3% on average) and at 10 kGy of gamma-rays (CCE raised by 5% and FWHM dropped by 8% on average), which is in agreement with the relative displacement damage of the used types of radiation. Gamma-rays of MeV energies are 1000-times less damaging than similar neutrons and electrons about 10-times more damaging than photons. On irradiating the detectors with neutrons and electrons, we observed a global increase in their detection efficiency, which was caused probably by enlargement of the active detector area as a consequence of created radiation defects in the base material. Detectors were still functional after a dose of 1140 kGy of ∼1 MeV photons, 104 kGy of 5 MeV electrons but only up to 0.576 kGy of fast (∼2 to 30 MeV) neutrons.

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Comptonization of low-frequency radiation in accretion disks Angular distribution and polarization of hard X-ray radiation

International Nuclear Information System (INIS)

Suniaev, R.A.; Titarchuk, L.G.

1984-01-01

Analytical consideration is given to the comptonization of photons and its effects on the radiation emitted from accretion disks of compact X-ray sources, such as black holes and neutron stars. Attention is given to the photon distribution during escape from the disk, the angular distribution of hard radiation from the disk, the polarization of hard radiation and the electron temperature distribution over the optical depth. It is shown that the hard radiation spectrum is independent of the low-frequency photon source distribution. The angular distribution and polarization of the outgoing X-rays are a function of the optical depth. A Thomson approximation is used to estimate the angular distribution of the hard radiation and the polarization over the disk. The polarization results are compared with OSO-8 satellite data for Cyg X-1 and show good agreement at several energy levels. 17 references

Electrostatic solvation free energies of charged hard spheres using molecular dynamics with density functional theory interactions

Science.gov (United States)

Duignan, Timothy T.; Baer, Marcel D.; Schenter, Gregory K.; Mundy, Chistopher J.

2017-10-01

Determining the solvation free energies of single ions in water is one of the most fundamental problems in physical chemistry and yet many unresolved questions remain. In particular, the ability to decompose the solvation free energy into simple and intuitive contributions will have important implications for models of electrolyte solution. Here, we provide definitions of the various types of single ion solvation free energies based on different simulation protocols. We calculate solvation free energies of charged hard spheres using density functional theory interaction potentials with molecular dynamics simulation and isolate the effects of charge and cavitation, comparing to the Born (linear response) model. We show that using uncorrected Ewald summation leads to unphysical values for the single ion solvation free energy and that charging free energies for cations are approximately linear as a function of charge but that there is a small non-linearity for small anions. The charge hydration asymmetry for hard spheres, determined with quantum mechanics, is much larger than for the analogous real ions. This suggests that real ions, particularly anions, are significantly more complex than simple charged hard spheres, a commonly employed representation.

Development of radiation hard CMOS active pixel sensors for HL-LHC

International Nuclear Information System (INIS)

Pernegger, Heinz

2016-01-01

New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

Shutdown and degradation: Space computers for nuclear application, verification of radiation hardness. Final report

International Nuclear Information System (INIS)

Eichhorn, E.; Gerber, V.; Schreyer, P.

1995-01-01

(1) Employment of those radiation hard electronics which are already known in military and space applications. (2) The experience in space-flight shall be used to investigate nuclear technology areas, for example, by using space electronics to prove the range of applications in nuclear radiating environments. (3) Reproduction of a computer developed for telecommunication satellites; proof of radiation hardness by radiation tests. (4) At 328 Krad (Si) first failure of radiation tolerant devices with 100 Krad (Si) hardness guaranteed. (5) Using radiation hard devices of the same type you can expect applications at doses of greater than 1 Mrad (Si). Electronic systems applicable for radiation categories D, C and lower part of B for manipulators, vehicles, underwater robotics. (orig.) [de

Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

Energy Technology Data Exchange (ETDEWEB)

Loechner, S.

2006-07-26

The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

International Nuclear Information System (INIS)

Loechner, S.

2006-01-01

The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

Effects of device scaling and geometry on MOS radiation hardness assurance

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S.; Schwank, J.R.; Meisenheimer, T.L.

1993-01-01

In this work the authors investigate the effects of transistor scaling and geometry on radiation hardness. The total dose response is shown to depend strongly on transistor channel length. Specifically, transistors with shorter gate lengths tend to show more negative threshold-voltage shifts during irradiation than transistors with longer gate lengths. Similarly, transistors with longer gate lengths tend to show more positive threshold-voltage shifts during post-irradiation annealing than transistors with shorter gate lengths. These differences in radiation response, caused by differences in transistor size and geometry, will be important to factor into test-structure-to-IC correlations necessary to support cost-effective Qualified Manufacturers List (QML) hardness assurance. Transistors with minimum gate length (more negative ΔV th ) will have a larger effect on standby power supply current for an IC at high dose rates, such as in a weapon environment, where worst-case response is associated with negative threshold-voltage shifts during irradiation. On the other hand, transistors with maximum gate length (more positive ΔV th ) will have a larger effect on the timing parameters of an IC at low dose rates, such as in a space environment, where worst-case response is represented by positive threshold-voltage shifts after postirradiation anneal. The channel size and geometry effects they observe cannot be predicted from simple scaling models, but occur because of real differences in oxide-, interface-, and border-trap charge densities among devices of different sizes

Radiation hard diamond sensors for future tracking applications

International Nuclear Information System (INIS)

Adam, W.; Boer, W. de; Borchi, E.

2006-01-01

Progress in experimental particle physics in the coming decade depends crucially upon the ability to carry out experiments in high-radiation areas. In order to perform these complex and expensive experiments, new radiation hard technologies must be developed. This paper discusses the use of diamond detectors in future tracking applications and their survivability in the highest radiation environments. We present results of devices constructed with the newest polycrystalline and single crystal Chemical Vapor Deposition diamond and their tolerance to radiation

Optical fiber composition and radiation hardness

International Nuclear Information System (INIS)

Wall, J.A.; Loretz, T.J.

1982-01-01

Germanium phosphosilicate and germanium borosilicate fibers doped with cerium were fabricated and tested for their responses to steady-state Co-60 radiation at -55 C, +20 C and +125 C. A fiber with germanium, boron and phosphorous in the silicate core and doped with antimony in the core and clad was similarly tested. All of the fibers showed significant improvements in radiation hardness at 20 C compared to undoped fibers of the same base composition. At -55 C, however, all except the cerium doped germanium phosphosilicate were very radiation sensitive and also showed increases in the rate of induced loss at +125 C. The cerium doped germanium phosphosilicate fiber showed virtually no change in radiation sensitivity at the temperature extremes and could prove useful in applications requiring relatively short lengths of fiber

Hard Quasi-real Photo-production of Charged Hadrons at COMPASS energies

CERN Document Server

Morréale, Astrid

2011-01-01

The Common Muon Proton Apparatus for Structure and Spectroscopy (COMPASS) at CERN with its use of beams of naturally polarized muons scattered of a polarized deuteron target, provides an environment of hard scattering between quasi-real photons and partons. Hard hadron quasi-real photo-production with polarized initial states is sensitive to the polarized gluon distribution $\\Delta$G through $\\gamma$-gluon($g$) direct channels as well as $q$-$g$ resolved processes. Comparisons of unpolarized differential cross section measurements to next-to-leading order (NLO) pQCD calculations are essential to develop our understanding of proton-proton and lepton-nucleon scattering at varying center of mass energies. These measurements are important to asses the applicability of NLO pQCD in interpreting polarized processes. In this talk we will discuss unidentified charged separated hadron production at low $Q^{2}$ (Q$^{2}1.0\\,GeV/c$). $$ spectra of charged hadrons at $Q^{2}>1 GeV^{2}/c^{2}$ will also be discussed.

Monte Carlo computer simulation of sedimentation of charged hard spherocylinders

International Nuclear Information System (INIS)

Viveros-Méndez, P. X.; Aranda-Espinoza, S.; Gil-Villegas, Alejandro

2014-01-01

In this article we present a NVT Monte Carlo computer simulation study of sedimentation of an electroneutral mixture of oppositely charged hard spherocylinders (CHSC) with aspect ratio L/σ = 5, where L and σ are the length and diameter of the cylinder and hemispherical caps, respectively, for each particle. This system is an extension of the restricted primitive model for spherical particles, where L/σ = 0, and it is assumed that the ions are immersed in an structureless solvent, i.e., a continuum with dielectric constant D. The system consisted of N = 2000 particles and the Wolf method was implemented to handle the coulombic interactions of the inhomogeneous system. Results are presented for different values of the strength ratio between the gravitational and electrostatic interactions, Γ = (mgσ)/(e 2 /Dσ), where m is the mass per particle, e is the electron's charge and g is the gravitational acceleration value. A semi-infinite simulation cell was used with dimensions L x ≈ L y and L z = 5L x , where L x , L y , and L z are the box dimensions in Cartesian coordinates, and the gravitational force acts along the z-direction. Sedimentation effects were studied by looking at every layer formed by the CHSC along the gravitational field. By increasing Γ, particles tend to get more packed at each layer and to arrange in local domains with an orientational ordering along two perpendicular axis, a feature not observed in the uncharged system with the same hard-body geometry. This type of arrangement, known as tetratic phase, has been observed in two-dimensional systems of hard-rectangles and rounded hard-squares. In this way, the coupling of gravitational and electric interactions in the CHSC system induces the arrangement of particles in layers, with the formation of quasi-two dimensional tetratic phases near the surface

Radiation-hard Silicon Photonics for Future High Energy Physics Experiments

CERN Document Server

AUTHOR|(CDS)2089774; Troska, Jan

Collisions of proton beams in the Large Hadron Collider at CERN produce very high radiation levels in the innermost parts of the particle detectors and enormous amounts of measurement data. Thousands of radiation-hard optical links based on directly-modulated laser diodes are thus installed in the particle detectors to transmit the measurement data to the processing electronics. The radiation levels in the innermost regions of future particle detectors will be much higher than they are now. Alternative solutions to laser-based radiation-hard optical links have to be found since the performance of laser diodes decreases beyond the operation margin of the system when irradiated to sufficiently high radiation levels. Silicon Photonics (SiPh) is currently being investigated as a promising alternative technology. First tests have indeed shown that SiPh Mach-Zehnder modulators (MZMs) are relatively insensitive to a high neutron fluence. However, they showed a strong degradation when exposed to ionizing radiation. ...

Radiation hardness of LuAG:Ce and LuAG:Pr scintillator crystals

CERN Document Server

Derdzyan, M V; Belsky, A; Dujardin, C; Lecoq, P; Lucchini, M; Ovanesyan, K L; Pauwels, K; Pedrini, C; Petrosyan, A G

2012-01-01

Single crystals of LuAG:Ce, LuAG:Pr and un-doped LuAG were grown by the vertical Bridgman method and studied for radiation hardness under gamma-rays with doses in the range 10-10(5) Gy (Co-60). A wide absorption band peaking at around 600 nm springs up in all three types of crystals after the irradiations. The second band peaking at around 375 nm appears in both LuAG:Pr and un-doped LuAG. Compositional variations have been done to reveal the spectral behavior of induced color centers in more detail and to understand their origin. Similarities in behavior of Yb2+ centers in as-grown garnets are found, indicating that radiation induced color centers can be associated with residual trace amounts of Yb present in the raw materials. Un-doped LuAG and LuAG:Ce demonstrate moderate radiation hardness (the induced absorption coefficients being equal to 0.05-0.08 cm(-1) for accumulated doses of 10(3)-10(4) Gy), while LuAG:Pr is less radiation hard. The ways to improve the radiation hardness are discussed.

Design of a radiation hard silicon pixel sensor for X-ray science

Energy Technology Data Exchange (ETDEWEB)

Schwandt, Joern

2014-06-15

At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

Building memristive and radiation hardness TiO{sub 2}-based junctions

Energy Technology Data Exchange (ETDEWEB)

Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

2014-01-01

We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

Radiation hardness assurances categories for COTS technologies

International Nuclear Information System (INIS)

Hash, G.L.; Shaneyfelt, M.R.; Sexton, F.W.; Winokur, P.S.

1997-01-01

A comparison of the radiation tolerance of three commercial, and one radiation hardened SRAM is presented for four radiation environments. This work has shown the difficulty associated with strictly categorizing a device based solely on its radiation response, since its category depends on the specific radiation environment considered. For example, the 3.3-V Paradigm SRAM could be considered a radiation-tolerant device except for its SEU response. A more useful classification depends on the methods the manufacturer uses to ensure radiation hardness, i.e. whether specific design and process techniques have been used to harden the device. Finally, this work has shown that burned-in devices may fail functionally as much as 50% lower in total dose environments than non-burned-in devices. No burn-in effect was seen in dose-rate upset, latchup, or SEE environments. The user must ensure that total dose lot acceptance testing was performed on burned-in devices

Monte Carlo computer simulation of sedimentation of charged hard spherocylinders

Energy Technology Data Exchange (ETDEWEB)

Viveros-Méndez, P. X., E-mail: xviveros@fisica.uaz.edu.mx; Aranda-Espinoza, S. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad esq. Paseo, La Bufa s/n, 98060 Zacatecas, Zacatecas, México (Mexico); Gil-Villegas, Alejandro [Departamento de Ingeniería Física, División de Ciencias e Ingenierías, Campus León, Universidad de Guanajuato, Loma del Bosque 103, Lomas del Campestre, 37150 León, Guanajuato, México (Mexico)

2014-07-28

In this article we present a NVT Monte Carlo computer simulation study of sedimentation of an electroneutral mixture of oppositely charged hard spherocylinders (CHSC) with aspect ratio L/σ = 5, where L and σ are the length and diameter of the cylinder and hemispherical caps, respectively, for each particle. This system is an extension of the restricted primitive model for spherical particles, where L/σ = 0, and it is assumed that the ions are immersed in an structureless solvent, i.e., a continuum with dielectric constant D. The system consisted of N = 2000 particles and the Wolf method was implemented to handle the coulombic interactions of the inhomogeneous system. Results are presented for different values of the strength ratio between the gravitational and electrostatic interactions, Γ = (mgσ)/(e{sup 2}/Dσ), where m is the mass per particle, e is the electron's charge and g is the gravitational acceleration value. A semi-infinite simulation cell was used with dimensions L{sub x} ≈ L{sub y} and L{sub z} = 5L{sub x}, where L{sub x}, L{sub y}, and L{sub z} are the box dimensions in Cartesian coordinates, and the gravitational force acts along the z-direction. Sedimentation effects were studied by looking at every layer formed by the CHSC along the gravitational field. By increasing Γ, particles tend to get more packed at each layer and to arrange in local domains with an orientational ordering along two perpendicular axis, a feature not observed in the uncharged system with the same hard-body geometry. This type of arrangement, known as tetratic phase, has been observed in two-dimensional systems of hard-rectangles and rounded hard-squares. In this way, the coupling of gravitational and electric interactions in the CHSC system induces the arrangement of particles in layers, with the formation of quasi-two dimensional tetratic phases near the surface.

BUSFET -- A radiation-hardened SOI transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

Development of ITER diagnostics: Neutronic analysis and radiation hardness

Energy Technology Data Exchange (ETDEWEB)

Vukolov, Konstantin, E-mail: vukolov_KY@nrcki.ru; Borisov, Andrey; Deryabina, Natalya; Orlovskiy, Ilya

2015-10-15

Highlights: • Problems of ITER diagnostics caused by neutron radiation from hot DT plasma considered. • Careful neutronic analysis is necessary for ITER diagnostics development. • Effective nuclear shielding for ITER diagnostics in the 11th equatorial port plug proposed. • Requirements for study of radiation hardness of diagnostic elements defined. • Results of optical glasses irradiation tests in a fission reactor given. - Abstract: The paper is dedicated to the problems of ITER diagnostics caused by effects of radiation from hot DT plasma. An effective nuclear shielding must be arranged in diagnostic port plugs to meet the nuclear safety requirements and to provide reliable operation of the diagnostics. This task can be solved with the help of neutronic analysis of the diagnostics environment within the port plugs at the design stage. Problems of neutronic calculations are demonstrated for the 11th equatorial port plug. The numerical simulation includes the calculations of neutron fluxes in the port-plug and in the interspace. Options for nuclear shielding, such as tungsten collimator, boron carbide and water moderators, stainless steel and lead screens are considered. Data on neutron fluxes along diagnostic labyrinths allow to define radiation hardness requirements for the diagnostic components and to specify their materials. Options for windows and lenses materials for optical diagnostics are described. The results of irradiation of flint and silica glasses in nuclear reactor have shown that silica KU-1 and KS-4V retain transparency in visible range after neutron fluence of 10{sup 17} cm{sup −2}. Flints required for achromatic objectives have much less radiation hardness about 5 × 10{sup 14} n/cm{sup 2}.

Development and characterisation of a radiation hard readout chip for the LHCb experiment

CERN Document Server

Baumeister, Daniel; Stachel, Johanna

2003-01-01

Within this doctoral thesis parts of the radiation hard readout chip Beetle have been developed and characterised, before and after irradiation. The design work included the analogue memory with the corresponding readout amplifier as well as components of the digital control circuitry. An interface compatible with the I2C-standard and the control logic for event readout have been implemented. A scheme has been developed which ensures the robustness of the Beetle chip against Single-Event Upset (SEU). This includes the consistent use of triple-redundant memory devices together with a self-triggered correction in parts of the circuit. The Beetle ASIC is a 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier and a CR-RC pulse shaper. It features an equivalent noise charge of ENC = 497 e− +48.3 e−/pF·Cin. The analogue memory is a switched capacitor array, which provides a latency of max. 4 µs. The 128 channels are transmitted off chip in 9...

Radiation Hard and High Light Yield Scintillator Search for CMS Phase II Upgrade

CERN Document Server

Tiras, Emrah

2015-01-01

The CMS detector at the LHC requires a major upgrade to cope with the higher instantaneous luminosity and the elevated radiation levels. The active media of the forward backing hadron calorimeters is projected to be radiation-hard, high light yield scintillation materials or similar alternatives. In this context, we have studied various radiation-hard scintillating materials such as Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), High Efficiency Mirror (HEM) and quartz plates with various coatings. The quartz plates are pure Cerenkov radiators and their radiation hardness has been confirmed. In order to increase the light output, we considered organic and inorganic coating materials such as p-Terphenyl (pTp), Anthracene and Gallium-doped Zinc Oxide (ZnO Ga) that are applied as thin layers on the surface of the quartz plates. Here, we present the results of the related test beam activities, laboratory measurements and recent developments.

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

Science.gov (United States)

McMorrow, Julian

memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates

Evaluation of local radiation damage in silicon sensor via charge collection mapping with the Timepix read-out chip

International Nuclear Information System (INIS)

Platkevic, M; Jakubek, J; Jakubek, M; Pospisil, S; Zemlicka, J; Havranek, V; Semian, V

2013-01-01

Studies of radiation hardness of silicon sensors are standardly performed with single-pad detectors evaluating their global electrical properties. In this work we introduce a technique to visualize and determine the spatial distribution of radiation damage across the area of a semiconductor sensor. The sensor properties such as charge collection efficiency and charge diffusion were evaluated locally at many points of the sensor creating 2D maps. For this purpose we used a silicon sensor bump bonded to the pixelated Timepix read-out chip. This device, operated in Time-over-threshold (TOT) mode, allows for the direct energy measurement in each pixel. Selected regions of the sensor were intentionally damaged by defined doses (up to 10 12 particles/cm 2 ) of energetic protons (of 2.5 and 4 MeV). The extent of the damage was measured in terms of the detector response to the same ions. This procedure was performed either on-line during irradiation or off-line after it. The response of the detector to each single particle was analyzed determining the charge collection efficiency and lateral charge diffusion. We evaluated the changes of these parameters as a function of radiation dose. These features are related to the local properties such as the spatial homogeneity of the sensor. The effect of radiation damage was also independently investigated measuring local changes of signal response to γ, and X rays and alpha particles.

Radiation hard detectors from silicon enriched with both oxygen and thermal donors improvements in donor removal and long-term stability with regard to neutron irradiation

CERN Document Server

Li, Z; Eremin, V; Dezillie, B; Chen, W; Bruzzi, M

2002-01-01

Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in irradiated high resistivity Si detectors. Two facts have been established as the evidence of radiation hardness improvement of HTLT(TD) Si detectors irradiated below approx 10 sup 1 sup 4 n/cm sup 2 compared to detectors made on standard silicon wafers: the increase of space charge sign inversion fluence (of 1 MeV neutrons) due to lower initial Si resistivity dominated by TD, and the gain in the reverse annealing time constant tau favourable for this material. Coupled with extremely high radiation tolerance to protons observed earlier ('beta zero' behaviour in a wide range of fluence), detectors from HTLT(TD) Si may be unique for application in the experiments with multiple radiations. The changes in the effective sp...

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Space and military radiation effects in silicon-on-insulator devices

International Nuclear Information System (INIS)

Schwank, J.R.

1996-09-01

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

CeF3(Ba) radiation hard scintillator for electromagnetic calorimeters

International Nuclear Information System (INIS)

Aseev, A.A.; Devitsin, E.G.; Kozlov, V.A.; Hovepyan, Yu.I.; Potashov, S.Yu.; Sokolovsky, K.A.; Uvarova, T.V.; Vasilchenko, V.G.

1992-01-01

The influence of divalent fluoride dopants BaF 2 , CaF 2 , SrF 2 on radiation and luminescent properties of CeF 3 crystal is studied. A high radiation hardness (>10 8 rad) has been obtained for CeF 3 crystals doped with BaF 2 . (orig.)

21 CFR 892.5050 - Medical charged-particle radiation therapy system.

Science.gov (United States)

2010-04-01

...-particle radiation therapy system. (a) Identification. A medical charged-particle radiation therapy system... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Medical charged-particle radiation therapy system... equipment, patient and equipment supports, treatment planning computer programs, component parts, and...

Diffusion equations and hard collisions in multiple scattering of charged particles

International Nuclear Information System (INIS)

Papiez, Lech; Tulovsky, Vladimir

1998-01-01

The processes of angular-spatial evolution of multiple scattering of charged particles are described by the Lewis (special case of Boltzmann) integro-differential equation. The underlying stochastic process for this evolution is the compound Poisson process with transition densities satisfying the Lewis equation. In this paper we derive the Lewis equation from the compound Poisson process and show that the effective method of the solution of this equation can be based on the idea of decomposition of the compound Poisson process into processes of soft and hard collisions. Formulas for transition densities of soft and hard collision processes are provided in this paper together with the formula expressing the general solution of the Lewis equation in terms of those transition densities

Diffusion equations and hard collisions in multiple scattering of charged particles

Energy Technology Data Exchange (ETDEWEB)

Papiez, Lech [Department of Radiation Oncology, Indiana University, Indianapolis, IN (United States); Tulovsky, Vladimir [Department of Mathematics, St. John' s College, Staten Island, New York, NY (United States)

1998-09-01

The processes of angular-spatial evolution of multiple scattering of charged particles are described by the Lewis (special case of Boltzmann) integro-differential equation. The underlying stochastic process for this evolution is the compound Poisson process with transition densities satisfying the Lewis equation. In this paper we derive the Lewis equation from the compound Poisson process and show that the effective method of the solution of this equation can be based on the idea of decomposition of the compound Poisson process into processes of soft and hard collisions. Formulas for transition densities of soft and hard collision processes are provided in this paper together with the formula expressing the general solution of the Lewis equation in terms of those transition densities.

Chronic radiation effects on dental hard tissue (''radiation carries''). Classification and therapeutic strategies

International Nuclear Information System (INIS)

Groetz, K.A.; Brahm, R.; Al-Nawas, B.; Wagner, W.; Riesenbeck, D.; Willich, N.; Seegenschmiedt, M.H.

2001-01-01

Objectives: Since the first description of rapid destruction of dental hard tissues following head and neck radiotherapy 80 years ago, 'radiation caries' is an established clinical finding. The internationally accepted clinical evaluation score RTOG/EORTC however is lacking a classification of this frequent radiogenic alteration. Material and Methods: Medical records, data and images of radiation effects on the teeth of more than 1,500 patients, who underwent periradiotherapeutic care, were analyzed. Macroscopic alterations regarding the grade of late lesions of tooth crowns were used for a classification into 4 grades according to the RTOG/EORTC guidelines. Results: No early radiation effects were found by macroscopic inspection. In the first 90 days following radiotherapy 1/3 of the patients complained of reversible hypersensitivity, which may be related to a temporary hyperemia of the pulp. It was possible to classify radiation caries as a late radiation effect on a graded scale as known from RTOG/EORTC for other organ systems. This is a prerequisite for the integration of radiation caries into the international nomenclature of the RTOG/EORTC classification. Conclusions: The documentation of early radiation effects on dental hard tissues seems to be neglectable. On the other hand the documentation of late radiation effects has a high clinical impact. The identification of an initial lesion at the high-risk areas of the neck and incisal part of the tooth can lead to a successful therapy as a major prerequisite for orofacial rehabilitation. An internationally standardized documentation is a basis for the evaluation of the side effects of radiooncotic therapy as well as the effectiveness of protective and supportive procedures. (orig.) [de

Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders

CERN Multimedia

Joram, C; Gregor, I; Dierlamm, A H; Wilson, F F; Sloan, T; Tuboltsev, Y V; Marone, M; Artuso, M; Cindro, V; Bruzzi, M; Bhardwaj, A; Bohm, J; Mikestikova, M; Walz, M; Breindl, M A; Ruzin, A; Marunko, S; Guskov, J; Haerkoenen, J J; Pospisil, S; Fadeyev, V; Makarenko, L; Kaminski, P; Zelazko, J; Pintilie, L; Radu, R; Nistor, S V; Ullan comes, M; Storasta, J V; Gaubas, E; Lacasta llacer, C; Kilminster, B J; Garutti, E; Buhmann, P; Khomenkov, V; Poehlsen, J A; Fernandez garcia, M; Buttar, C; Eklund, L M; Munoz sanchez, F J; Eremin, V; Aleev, A; Modi, B; Sicho, P; Gisen, A J; Nikolopoulos, K; Van beuzekom, M G; Kozlowski, R; Lozano fantoba, M; Leroy, C; Pernegger, H; Del burgo, R; Vila alvarez, I; Palomo pinto, F R; Lounis, A; Eremin, I; Fadeeva, N; Rogozhkin, S; Shivpuri, R K; Arsenovich, T; Ott, J; Abt, M; Loenker, J; Savic, N; Monaco, V; Visser, J; Lynn, D; Horazdovsky, T; Solar, M; Dervan, P J; Meng, L; Spencer, E N; Kazuchits, N; Brzozowski, A; Kozubal, M; Nistor, L C; Marti i garcia, S; Gomez camacho, J J; Fretwurst, E; Hoenniger, F; Schwandt, J; Hartmann, F; Marchiori, G; Maneuski, D; De capua, S; Williams, M R J; Mandic, I; Gadda, A; Preiss, J; Macchiolo, A; Nisius, R; Grinstein, S; Gonella, L; Wennloef, H L O; Slavicek, T; Masek, P; Casse, G; Flores, D; Tuuva, T; Jimenez ramos, M D C; Charron, S; Rubinskiy, I; Jansen, H; Eichhorn, T V; Matysek, M; Andersson-lindstroem, G; Donegani, E; Bomben, M; Oshea, V; Muenstermann, D; Holmkvist, C W; Oh, A; Lopez paz, I; Verbitskaya, E; Mitina, D; Grigoriev, E; Zaluzhnyy, A; Mikuz, M; Kramberger, G; Scaringella, M; Ranjeet, R; Jain, A; Luukka, P R; Tuominen, E M; Allport, P P; Cartiglia, N; Brigljevic, V; Kohout, Z; Quirion, D; Lauer, K; Collins, P; Gallrapp, C; Rohe, T V; Chauveau, J; Villani, E G; Fox, H; Parkes, C J; Nikitin, A; Spiegel, L G; Creanza, D M; Menichelli, D; Mcduff, H; Carna, M; Weers, M; Weigell, P; Bortoletto, D; Staiano, A; Bellan, R; Szumlak, T; Sopko, V; Pawlowski, M; Pintilie, I; Pellegrini, G; Rafi tatjer, J M; Moll, M; Eckstein, D; Klanner, R; Gomez, G; Gersabeck, M; Cobbledick, J L; Shepelev, A; Golubev, A; Apresyan, A; Lipton, R J; Borgia, A; Zavrtanik, M; Manna, N; Ranjan, K; Chhabra, S; Beyer, J; Korolkov, I; Heintz, U; Sadrozinski, H; Seiden, A; Surma, B; Esteban, S; Kazukauskas, V; Kalendra, V; Mekys, A; Nachman, B P; Tackmann, K; Steinbrueck, G; Pohlsen, T; Calderini, G; Svihra, P; Murray, D; Bolla, G; Zontar, D; Focardi, E; Seidel, S C; Winkler, A D; Altenheiner, S; Parzefall, U; Moser, H; Sopko, B; Buckland, M D; Vaitkus, J V; Ortlepp, T

2002-01-01

The requirements at the Large Hadron Collider (LHC) at CERN have pushed the present day silicon tracking detectors to the very edge of the current technology. Future very high luminosity colliders or a possible upgrade scenario of the LHC to a luminosity of 10$^{35}$ cm$^{-2}$s$^{-1}$ will require semiconductor detectors with substantially improved properties. Considering the expected total fluences of fast hadrons above 10$^{16}$ cm$^{-2}$ and a possible reduced bunch-crossing interval of $\\approx$10 ns, the detector must be ultra radiation hard, provide a fast and efficient charge collection and be as thin as possible.\\\\ We propose a research and development program to provide a detector technology, which is able to operate safely and efficiently in such an environment. Within this project we will optimize existing methods and evaluate new ways to engineer the silicon bulk material, the detector structure and the detector operational conditions. Furthermore, possibilities to use semiconductor materials othe...

Transition radiation in metal-metal multilayer nanostructures as a medical source of hard x-ray radiation

International Nuclear Information System (INIS)

Pokrovsky, A. L.; Kaplan, A. E.; Shkolnikov, P. L.

2006-01-01

We show that a periodic metal-metal multilayer nanostructure can serve as an efficient source of hard x-ray transition radiation. Our research effort is aimed at developing an x-ray source for medical applications, which is based on using low-energy relativistic electrons. The approach toward choosing radiator-spacer couples for the generation of hard x-ray resonant transition radiation by few-MeV electrons traversing solid multilayer structures for the energies of interest to medicine (30-50 keV) changes dramatically compared with that for soft x-ray radiation. We show that one of the main factors in achieving the required resonant line is the absence of the contrast of the refractive indices between the spacer and the radiator at the far wings of the radiation line; for that purpose, the optimal spacer, as a rule, should have a higher atomic number than the radiator. Having experimental goals in mind, we have considered also the unwanted effects due to bremsstrahlung radiation, absorption and scattering of radiated photons, detector-related issues, and inhibited coherence of transition radiation due to random deviation of spacing between the layers. Choosing as a model example a Mo-Ag radiator-spacer pair of materials, we demonstrate that the x-ray transition radiation line can be well resolved with the use of spatial and frequency filtering

Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

CERN Document Server

Miucci, A; Hemperek, T.; Hügging, F.; Krüger, H.; Obermann, T.; Wermes, N.; Garcia-Sciveres, M.; Backhaus, M.; Capeans, M.; Feigl, S.; Nessi, M.; Pernegger, H.; Ristic, B.; Gonzalez-Sevilla, S.; Ferrere, D.; Iacobucci, G.; Rosa, A.La; Muenstermann, D.; George, M.; Grosse-Knetter, J.; Quadt, A.; Rieger, J.; Weingarten, J.; Bates, R.; Blue, A.; Buttar, C.; Hynds, D.; Kreidl, C.; Peric, I.; Breugnon, P.; Pangaud, P.; Godiot-Basolo, S.; Fougeron, D.; Bompard, F.; Clemens, J.C.; Liu, J; Barbero, M.; Rozanov, A

2014-01-01

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. 1Corresponding author. c CERN 2014, published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation and DOI. doi:10.1088/1748-0221/9/05/C050642014 JINST 9 C05064 A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation a...

The transient radiation effects and hardness of programmed device

International Nuclear Information System (INIS)

Du Chuanhua; Xu Xianguo; Zhao Hailin

2014-01-01

A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

A pixel unit-cell targeting 16 ns resolution and radiation hardness in a column read-out particle vertex detector

International Nuclear Information System (INIS)

Wright, M.; Millaud, J.; Nygren, D.

1992-10-01

A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here, emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application

A pixel unit-cell targeting 16ns resolution and radiation hardness in a column read-out particle vertex detector

International Nuclear Information System (INIS)

Wright, M.; Millaud, J.; Nygren, D.

1993-01-01

A pixel unit cell (PUC) circuit architecture, optimized for a column read out architecture, is reported. Each PUC contains an integrator, active filter, comparator, and optional analog store. The time-over-threshold (TOT) discriminator allows an all-digital interface to the array periphery readout while passing an analog measure of collected charge. Use of (existing) radiation hard processes, to build a detector bump-bonded to a pixel readout array, is targeted. Here emphasis is on a qualitative explanation of how the unique circuit implementation benefits operation for Super Collider (SSC) detector application. (orig.)

Recent results on CVD diamond radiation sensors

Science.gov (United States)

Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

1998-02-01

CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-05-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

Science.gov (United States)

Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

2018-03-01

Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

Response of GaAs charge storage devices to transient ionizing radiation

Science.gov (United States)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Performance And Radiation Hardness Of The Atlas/sct Detector Module

CERN Document Server

Eklund, L

2003-01-01

The ATLAS experiment is a general purpose experiment being constructed at the Large Hadron Collider (LHC) at FERN, Geneva. ATLAS is designed to exploit the full physics potential of LHC, in particular to study topics concerning the Higgs mechanism, Super-symmetry and CP violation. The cross sections for the processes under study are extremely small, requiring very high luminosity colliding beams. The Semiconductor Tracker (SCT) is an essential part of the Inner Detector tracking system of ATLAS. The active elements of the SCT is 4088 detector modules, tiled on four barrel cylinders and eighteen endcap disks. As a consequence of the high luminosity, the detector modules will operate in a harsh radiation environment. This thesis describes work concerning radiation hardness, beam test performance and methods for production testing of detector modules. The radiation hardness studies have been focused on the electrical performance of the front-end ASIC and the detector module. The results have identified features ...

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

Science.gov (United States)

Son, Kyung-ah; Liao, Anna; Lung, Gerald; Gallegos, Manuel; Hatakeh, Toshiro; Harris, Richard D.; Scheick, Leif Z.; Smythe, William D.

2010-01-01

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

Charged hard spheres in a uniform neutralizing background: The role of thermodynamics selfconsistence

International Nuclear Information System (INIS)

Badirkhan, Z.; Pastore, G.; Tosi, M.P.

1991-06-01

Calculations of the thermodynamic properties and pair distribution function of a one-component classical fluid of charged hard spheres in a uniform neutralizing background are reported and compared with Monte Carlo results of Hansen and Weis. Thermodynamic selfconsistence between the virial pressure and the fluctuations formula for the isothermal compressibility is enforced in the calculations by various alternative approaches. The role of thermodynamic selfconsistence is crucial to obtain a satisfactory quantitative description of this model fluid, in view of its applications in the theory of liquid metals and of dispersions of charged colloidal particles. (author). 23 refs, 4 figs, 3 tabs

Study of hard braking x-ray radiation on the radiation-beam complex ''TEMP''

International Nuclear Information System (INIS)

Batrakov, A.B.; Glushko, E.G.; Egorov, A.M.; Zinchenko, A.A.; Litvinenko, V.V.; Lonin, Yu.F.; Ponomarev, A.G.; Rybka, A.V.; Fedotov, S.I.; Uvarov, V.T.

2015-01-01

A calculation over of basic parameters of the hard brake x-rayed radiation for the microsecond accelerating of relativistic electronic beam T EMP . Optimization of converters is conducted for these aims. Maximal doses are experimentally got brake x-rayed radiation on beam-radiation complex T EMP . The diagrams of orientation of the brake x-rayed radiation are taken off depending on energies of bunches and forms of electrodes.

Radiation from Accelerating Electric Charges: The Third Derivative of Position

Science.gov (United States)

Butterworth, Edward

2010-03-01

While some textbooks appear to suggest that acceleration of an electric charge is both a necessary and sufficient cause for the generation of electromagnetic radiation, the question has in fact had an intricate and involved history. In particular, the acceleration of a charge in hyperbolic motion, the behavior of a charge supported against a gravitational force (and its implications for the Equivalence Principle), and a charge accelerated by a workless constraint have been the subject of repeated investigation. The present paper examines specifically the manner in which the third derivative of position enters into the equations of motion, and the implications this has for the emission of radiation. Plass opens his review article with the statement that ``A fundamental property of all charged particles is that electromagnetic energy is radiated whenever they are accelerated'' (Plass 1961; emphasis mine). His treatment of the equations of motion, however, emphasizes the importance of the occurrence of the third derivative of position therein, present in linear motion only when the rate of acceleration is increasing or decreasing. There appears to be general agreement that the presence of a nonzero third derivative indicates that this charge is radiating; but does its absence preclude radiation? This question leads back to the issues of charges accelerated by a uniform gravitational field. We will examine the equations of motion as presented in Fulton & Rohrlich (1960), Plass (1961), Barut (1964), Teitelboim (1970) and Mo & Papas (1971) in the light of more recent literature in an attempt to clarify this question.

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

Energy Technology Data Exchange (ETDEWEB)

Johansen, Lars Gimmestad

2005-07-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Radiation hard silicon microstrip detectors for use in ATLAS at CERN

International Nuclear Information System (INIS)

Johansen, Lars Gimmestad

2005-06-01

The Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will accelerate protons in colliding beams to a center of mass energy of 14 TeV at very high luminosities. The ATLAS detector is being built to explore the physics in this unprecedented energy range. Tracking of charged particles in high-energy physics (HEP) experiments requires a high spatial resolution and fast signal readout, all with as little material as possible. Silicon microstrip detectors meet these requirements well and have been chosen for the Semiconductor Tracker (SCT) which is part of the inner tracking system of ATLAS and has a total area of 61 m2. During the 10 years of operation at LHC, the total fluence received by the detectors is sufficiently large that they will suffer a severe degradation from radiation induced damage. The damage affects both the physics performance of the detectors as well as their operability and a great challenge has been to develop radiation hard detectors for this environment. An extensive irradiation programme has been carried out where detectors of various designs, including defect engineering by oxygen enriched silicon, have been irradiated to the expected fluence. A subsequent thermal annealing period is included to account for a realistic annual maintenance schedule at room temperature, during which the radiation induced defects alter the detector properties significantly. This thesis presents work that has been carried out in the Bergen ATLAS group with results both from the irradiation programme and from detector testing during the module production. (Author)

Carbon 1s photoelectron spectroscopy of halomethanes. Effects of electronegativity, hardness, charge distribution, and relaxation

International Nuclear Information System (INIS)

Saethre, L.J.; Borve, K.J.; Thomas, T.D.; Bozek, J.D.; Huttula, M.; Kukk, E.

2004-01-01

Full text: The concept of electronegativity - the ability of an atom (or functional group) to attract electrons to itself - plays an important role in chemistry. A related concept is the hardness, which has been defined to be half the derivative of electronegativity with respect to charge. It is inversely related to polarizibility. A number of quantitative definitions of electronegativity have been given and a number of tables of electronegativity and hardness have been presented. In spite of this extensive activity the quantitative nature of both of these remains elusive. Inner-shell ionization energies reflect both the charge distribution in a molecule (and, hence, the electronegativity of its component atoms) and the polarizibility of the molecule (and, hence, the hardness of the component atoms). It is not surprising, therefore, that the core-ionization energies of a central atom correlate with the electronegativities of the substituents attached to the atom. It has been our goal to use these correlations to obtain a better insight into the nature of electronegativity and to develop a method for assigning group electronegativities on the basis of core-ionization energies. Carbon 1s ionization energies have been measured for 12 halomethanes. These together with earlier measurements provide 27 compounds for investigating the relationship between core-ionization energies and the electronegativity and hardness of the halogens. The ionization energies correlate nearly linearly with the sum of the electronegativities of the halogens attached to the central carbon. Both electronegativity and hardness play important roles in determining the ionization energy, and it is found that the linear relationship between ionization energy and electronegativity arises from an interplay of the electronegativity and hardness of the halogens and the length and ionicity of the carbon-halogen bond

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

Science.gov (United States)

Pernegger, H.; Bates, R.; Buttar, C.; Dalla, M.; van Hoorne, J. W.; Kugathasan, T.; Maneuski, D.; Musa, L.; Riedler, P.; Riegel, C.; Sbarra, C.; Schaefer, D.; Schioppa, E. J.; Snoeys, W.

2017-06-01

The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

First tests of a novel radiation hard CMOS sensor process for Depleted Monolithic Active Pixel Sensors

International Nuclear Information System (INIS)

Pernegger, H.; Hoorne, J.W. van; Kugathasan, T.; Musa, L.; Riedler, P.; Riegel, C.; Schaefer, D.; Schioppa, E.J.; Snoeys, W.; Bates, R.; Buttar, C.; Maneuski, D.; Dalla, M.; Sbarra, C.

2017-01-01

The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 10"1"5 n _e_q/cm"2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].

Statistical mechanics of a one-component fluid of charged hard rods in 1D

International Nuclear Information System (INIS)

Vericat, F.; Blum, L.

1986-09-01

The statistical mechanics of a classical one component system of charged hard rods in a neutralizing background is investigated in 1D stressing on the effects of the hard core interactions over the thermodynamic and the structure of the system. The crystalline status of the system at all temperatures and densities and the absence of phase transitions is shown by extending previous results of Baxter and Kunz on the one-component plasma of point particles. Explicit expressions for the thermodynamic functions and the one-particle correlation function are given in the limits of small and strong couplings. (author)

Hardness measurements of silicon rubber and polyurethane rubber cured by ionizing radiation

International Nuclear Information System (INIS)

Basfar, A.A.

1995-01-01

This work investigates the hardness of both silicon rubber and polyurethane rubber cured by ionizing radiation. Shore A Hardness is used to characterize the subject elastomers in relation to the crosslinking process. Various formulations of both materials have been investigated in order to achieve the optimum cure conditions desired. A small amount of the curing agent has been incorporated in some formulations in order to reduce the required dose to achieve full cure conditions. Silicon rubber has shown improvements in hardness as absorbed dose is increased, whereas hardness remained constant over a range of absorbed doses for polyurethane rubber

Interplanetary Radiation and Internal Charging Environment Models for Solar Sails

Science.gov (United States)

Minow, Joseph I.; Altstatt, Richard L.; NeegaardParker, Linda

2005-01-01

A Solar Sail Radiation Environment (SSRE) model has been developed for defining charged particle environments over an energy range from 0.01 keV to 1 MeV for hydrogen ions, helium ions, and electrons. The SSRE model provides the free field charged particle environment required for characterizing energy deposition per unit mass, charge deposition, and dose rate dependent conductivity processes required to evaluate radiation dose and internal (bulk) charging processes in the solar sail membrane in interplanetary space. Solar wind and energetic particle measurements from instruments aboard the Ulysses spacecraft in a solar, near-polar orbit provide the particle data over a range of heliospheric latitudes used to derive the environment that can be used for radiation and charging environments for both high inclination 0.5 AU Solar Polar Imager mission and the 1.0 AU L1 solar missions. This paper describes the techniques used to model comprehensive electron, proton, and helium spectra over the range of particle energies of significance to energy and charge deposition in thin (less than 25 micrometers) solar sail materials.

Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter

CERN Document Server

Adzic, P.; Andelin, D.; Anicin, I.; Antunovic, Z.; Arcidiacono, R.; Arenton, M.W.; Auffray, E.; Argiro, S.; Askew, A.; Baccaro, S.; Baffioni, S.; Balazs, M.; Bandurin, D.; Barney, D.; Barone, L.M.; Bartoloni, A.; Baty, C.; Beauceron, S.; Bell, K.W.; Bernet, C.; Besancon, M.; Betev, B.; Beuselinck, R.; Biino, C.; Blaha, J.; Bloch, P.; Borisevitch, A.; Bornheim, A.; Bourotte, J.; Brown, R.M.; Buehler, M.; Busson, P.; Camanzi, B.; Camporesi, T.; Cartiglia, N.; Cavallari, F.; Cecilia, A.; Chang, P.; Chang, Y.H.; Charlot, C.; Chen, E.A.; Chen, W.T.; Chen, Z.; Chipaux, R.; Choudhary, B.C.; Choudhury, R.K.; Cockerill, D.J.A.; Conetti, S.; Cooper, S.I.; Cossutti, F.; Cox, B.; Cussans, D.G.; Dafinei, I.; Da Silva Di Calafiori, D.R.; Daskalakis, G.; David, A.; Deiters, K.; Dejardin, M.; De Benedetti, A.; Della Ricca, G.; Del Re, D.; Denegri, D.; Depasse, P.; Descamps, J.; Diemoz, M.; Di Marco, E.; Dissertori, G.; Dittmar, M.; Djambazov, L.; Djordjevic, M.; Dobrzynski, L.; Dolgopolov, A.; Drndarevic, S.; Drobychev, G.; Dutta, D.; Dzelalija, M.; Elliott-Peisert, A.; El Mamouni, H.; Evangelou, I.; Fabbro, B.; Faure, J.L.; Fay, J.; Fedorov, A.; Ferri, F.; Franci, D.; Franzoni, G.; Freudenreich, K.; Funk, W.; Ganjour, S.; Gascon, S.; Gataullin, M.; Gentit, F.X.; Ghezzi, A.; Givernaud, A.; Gninenko, S.; Go, A.; Gobbo, B.; Godinovic, N.; Golubev, N.; Govoni, P.; Grant, N.; Gras, P.; Haguenauer, M.; Hamel de Monchenault, G.; Hansen, M.; Haupt, J.; Heath, H.F.; Heltsley, B.; Cornell U., LNS.; Hintz, W.; Hirosky, R.; Hobson, P.R.; Honma, A.; Hou, G.W.S.; Hsiung, Y.; Huhtinen, M.; Ille, B.; Ingram, Q.; Inyakin, A.; Jarry, P.; Jessop, C.; Jovanovic, D.; Kaadze, K.; Kachanov, V.; Kailas, S.; Kataria, S.K.; Kennedy, B.W.; Kokkas, P.; Kolberg, T.; Korjik, M.; Krasnikov, N.; Krpic, D.; Kubota, Y.; Kuo, C.M.; Kyberd, P.; Kyriakis, A.; Lebeau, M.; Lecomte, P.; Lecoq, P.; Ledovskoy, A.; Lethuillier, M.; Lin, S.W.; Lin, W.; Litvine, V.; Locci, E.; Longo, E.; Loukas, D.; Luckey, P.D.; Lustermann, W.; Ma, Y.; Malberti, M.; Malcles, J.; Maletic, D.; Manthos, N.; Maravin, Y.; Marchica, C.; Marinelli, N.; Markou, A.; Markou, C.; Marone, M.; Matveev, V.; Mavrommatis, C.; Meridiani, P.; Milenovic, P.; Mine, P.; Missevitch, O.; Mohanty, A.K.; Moortgat, F.; Musella, P.; Musienko, Y.; Nardulli, A.; Nash, J.; Nedelec, P.; Negri, P.; Newman, H.B.; Nikitenko, A.; Nessi-Tedaldi, F.; Obertino, M.M.; Organtini, G.; Orimoto, T.; Paganoni, M.; Paganini, P.; Palma, A.; Pant, L.; Papadakis, A.; Papadakis, I.; Papadopoulos, I.; Paramatti, R.; Parracho, P.; Pastrone, N.; Patterson, J.R.; Pauss, F.; Peigneux, J.P.; Petrakou, E.; Phillips, D.G.; Piroue, P.; Ptochos, F.; Puljak, I.; Pullia, A.; Punz, T.; Puzovic, J.; Ragazzi, S.; Rahatlou, S.; Rander, J.; Razis, P.A.; Redaelli, N.; Renker, D.; Reucroft, S.; Ribeiro, P.; Rogan, C.; Ronquest, M.; Rosowsky, A.; Rovelli, C.; Rumerio, P.; Rusack, R.; Rusakov, S.V.; Ryan, M.J.; Sala, L.; Salerno, R.; Schneegans, M.; Seez, C.; Sharp, P.; Shepherd-Themistocleous, C.H.; Shiu, J.G.; Shivpuri, R.K.; Shukla, P.; Siamitros, C.; Sillou, D.; Silva, J.; Silva, P.; Singovsky, A.; Sirois, Y.; Sirunyan, A.; Smith, V.J.; Stockli, F.; Swain, J.; Tabarelli de Fatis, T.; Takahashi, M.; Tancini, V.; Teller, O.; Theofilatos, K.; Thiebaux, C.; Timciuc, V.; Timlin, C.; Titov, Maxim P.; Topkar, A.; Triantis, F.A.; Troshin, S.; Tyurin, N.; Ueno, K.; Uzunian, A.; Varela, J.; Verrecchia, P.; Veverka, J.; Virdee, T.; Wang, M.; Wardrope, D.; Weber, M.; Weng, J.; Williams, J.H.; Yang, Y.; Yaselli, I.; Yohay, R.; Zabi, A.; Zelepoukine, S.; Zhang, J.; Zhang, L.Y.; Zhu, K.; Zhu, R.Y.

2010-01-01

Ensuring the radiation hardness of PbWO4 crystals was one of the main priorities during the construction of the electromagnetic calorimeter of the CMS experiment at CERN. The production on an industrial scale of radiation hard crystals and their certification over a period of several years represented a difficult challenge both for CMS and for the crystal suppliers. The present article reviews the related scientific and technological problems encountered.

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

CERN Document Server

Beringer, J; Mommsen, R K; Nickerson, R B; Weidberg, A R; Monnier, E; Hou, H Q; Lear, K L

1999-01-01

We study the radiation hardness and the lifetime of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs) in the context of the development of the optical readout for the ATLAS SemiConductor Tracker (SCT) at LHC. About 170 LEDs from two different manufacturers and about 130 VCSELs were irradiated with neutron and proton fluences equivalent to (and in some cases more than twice as high as) the combined neutral and charged particle fluence of about 5x10 sup 1 sup 4 n (1 MeV eq. in GaAs)/cm sup 2 expected in the ATLAS inner detector. We report on the radiation damage and the conditions required for its partial annealing under forward bias, we calculate radiation damage constants, and we present post-irradiation failure rates for LEDs and VCSELs. The lifetime after irradiation was investigated by operating the diodes at an elevated temperature of 50 degree sign C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From o...

Inclusion of Radiation Environment Variability in Total Dose Hardness Assurance Methodology

Science.gov (United States)

Xapsos, M. A.; Stauffer, C.; Phan, A.; McClure, S. S.; Ladbury, R. L.; Pellish, J. A.; Campola, M. J.; LaBel, K. A.

2016-01-01

Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the radiation design margin concept with one of failure probability during a mission.

Radiation-hard Active Pixel Sensors for HL-LHC Detector Upgrades based on HV-CMOS Technology

International Nuclear Information System (INIS)

Miucci, A; Gonzalez-Sevilla, S; Ferrere, D; Iacobucci, G; Rosa, A La; Muenstermann, D; Gonella, L; Hemperek, T; Hügging, F; Krüger, H; Obermann, T; Wermes, N; Garcia-Sciveres, M; Backhaus, M; Capeans, M; Feigl, S; Nessi, M; Pernegger, H; Ristic, B; George, M

2014-01-01

Luminosity upgrades are discussed for the LHC (HL-LHC) which would make updates to the detectors necessary, requiring in particular new, even more radiation-hard and granular, sensors for the inner detector region. A proposal for the next generation of inner detectors is based on HV-CMOS: a new family of silicon sensors based on commercial high-voltage CMOS technology, which enables the fabrication of part of the pixel electronics inside the silicon substrate itself. The main advantages of this technology with respect to the standard silicon sensor technology are: low material budget, fast charge collection time, high radiation tolerance, low cost and operation at room temperature. A traditional readout chip is still needed to receive and organize the data from the active sensor and to handle high-level functionality such as trigger management. HV-CMOS has been designed to be compatible with both pixel and strip readout. In this paper an overview of HV2FEI4, a HV-CMOS prototype in 180 nm AMS technology, will be given. Preliminary results after neutron and X-ray irradiation are shown

Radiation Hardness Study of CsI(Tl) Crystals for Belle II Calorimeter

CERN Document Server

Matvienko, D V; Sedov, E V; Shwartz, B A

2017-01-01

The Belle II calorimeter (at least, its barrel part) consists of CsI(Tl) scintillation crystals which have been used at the Belle experiment. We perform the radiation hardness study of some typical Belle crystals and conclude their light output reductions are acceptable for Belle II experiment where the absorption dose can reach 10 krad during the detector operation. CsI(Tl) crystals have high stablity and low maintenance cost and are considered as possible option for the calorimeter of the future Super-Charm-Tau factory (SCT) in Novosibirsk. Our study demonstrates sufficiently high radiation hardness of CsI(Tl) crystals for SCT conditions.

Towards an analytical theory for charged hard spheres

Directory of Open Access Journals (Sweden)

L.Blum

2007-09-01

Full Text Available Ion mixtures require an exclusion core to avoid collapse. The Debye Hueckel (DH theory, where ions are point charges, is accurate only in the limit of infinite dilution. The mean spherical approximation (MSA is the embedding of hard cores into DH, and is valid for higher densities. The properties of any ionic mixture can be represented by the single screening parameter Γ which for the equal ionic size restricted model is obtained from the Debye parameter κ. This Γ representation, the binding mean spherical approximation (BIMSA, is also valid for complex/associating systems, such as the general n-polyelectrolytes. The BIMSA is the only theory that satisfies the infinite dilution limit of the DH theory for any chain length. Furthermore, the contact pair distribution function calculated from our theory agrees with the Monte Carlo of Bresmeea. (Phys. Rev. E, 1995, 51, 289.

Intelligent optimization models based on hard-ridge penalty and RBF for forecasting global solar radiation

International Nuclear Information System (INIS)

Jiang, He; Dong, Yao; Wang, Jianzhou; Li, Yuqin

2015-01-01

Highlights: • CS-hard-ridge-RBF and DE-hard-ridge-RBF are proposed to forecast solar radiation. • Pearson and Apriori algorithm are used to analyze correlations between the data. • Hard-ridge penalty is added to reduce the number of nodes in the hidden layer. • CS algorithm and DE algorithm are used to determine the optimal parameters. • Proposed two models have higher forecasting accuracy than RBF and hard-ridge-RBF. - Abstract: Due to the scarcity of equipment and the high costs of maintenance, far fewer observations of solar radiation are made than observations of temperature, precipitation and other weather factors. Therefore, it is increasingly important to study several relevant meteorological factors to accurately forecast solar radiation. For this research, monthly average global solar radiation and 12 meteorological parameters from 1998 to 2010 at four sites in the United States were collected. Pearson correlation coefficients and Apriori association rules were successfully used to analyze correlations between the data, which provided a basis for these relative parameters as input variables. Two effective and innovative methods were developed to forecast monthly average global solar radiation by converting a RBF neural network into a multiple linear regression problem, adding a hard-ridge penalty to reduce the number of nodes in the hidden layer, and applying intelligent optimization algorithms, such as the cuckoo search algorithm (CS) and differential evolution (DE), to determine the optimal center and scale parameters. The experimental results show that the proposed models produce much more accurate forecasts than other models

Hawking radiation of five-dimensional charged black holes with scalar fields

Directory of Open Access Journals (Sweden)

Yan-Gang Miao

2017-09-01

Full Text Available We investigate the Hawking radiation cascade from the five-dimensional charged black hole with a scalar field coupled to higher-order Euler densities in a conformally invariant manner. We give the semi-analytic calculation of greybody factors for the Hawking radiation. Our analysis shows that the Hawking radiation cascade from this five-dimensional black hole is extremely sparse. The charge enhances the sparsity of the Hawking radiation, while the conformally coupled scalar field reduces this sparsity.

Medical radiation dosimetry theory of charged particle collision energy loss

CERN Document Server

McParland, Brian J

2014-01-01

Accurate radiation dosimetry is a requirement of radiation oncology, diagnostic radiology and nuclear medicine. It is necessary so as to satisfy the needs of patient safety, therapeutic and diagnostic optimisation, and retrospective epidemiological studies of the biological effects resulting from low absorbed doses of ionising radiation. The radiation absorbed dose received by the patient is the ultimate consequence of the transfer of kinetic energy through collisions between energetic charged particles and atoms of the tissue being traversed. Thus, the ability of the medical physicist to both measure and calculate accurately patient dosimetry demands a deep understanding of the physics of charged particle interactions with matter. Interestingly, the physics of charged particle energy loss has an almost exclusively theoretical basis, thus necessitating an advanced theoretical understanding of the subject in order to apply it appropriately to the clinical regime. ​ Each year, about one-third of the worl...

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: gianfranco.dallabetta@unitn.it [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Betancourt, Christopher [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Boscardin, Maurizio; Giacomini, Gabriele [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy); Jakobs, Karl; Kühn, Susanne [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Lecini, Besnik [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Mendicino, Roberto [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); INFN TIFPA, Via Sommarive 14, I-38123 Trento (Italy); Mori, Riccardo; Parzefall, Ulrich [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Povoli, Marco [Dipartimento di Ingegneria Industriale, Università degli Studi di Trento, Via Sommarive 9, I-38123 Trento (Italy); Thomas, Maira [Institute of Physics, University of Freiburg, Hermann-Herder-Str. 3, 79104 Freiburg (Germany); Zorzi, Nicola [Fondazione Bruno Kessler, Centro per i Materiali e i Microsistemi (FBK-CMM), Via Sommarive 18, I-38123 Trento (Italy)

2014-11-21

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages.

Radiation hardness tests of double-sided 3D strip sensors with passing-through columns

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Betancourt, Christopher; Boscardin, Maurizio; Giacomini, Gabriele; Jakobs, Karl; Kühn, Susanne; Lecini, Besnik; Mendicino, Roberto; Mori, Riccardo; Parzefall, Ulrich; Povoli, Marco; Thomas, Maira; Zorzi, Nicola

2014-01-01

This paper deals with a radiation hardness study performed on double-sided 3D strip sensors with passing-through columns. Selected results from the characterization of the irradiated sensors with a beta source and a laser setup are reported and compared to pre-irradiation results and to TCAD simulations. The sensor performance in terms of signal efficiency is found to be in good agreement with that of other 3D sensors irradiated at the same fluences and tested under similar experimental conditions. - Highlights: • We report results from 3D silicon strip detectors irradiated up to HL-LHC fluences. • I–V curves, noise, charge collection measurements and laser scans are shown. • In all sensors, signals are distinguished from the noise already at low voltage. • Signal efficiency is in agreement with values expected from the electrode geometry. • Efficiency and spatial uniformity would benefit from higher operation voltages

Radiation-hard/high-speed parallel optical links

Energy Technology Data Exchange (ETDEWEB)

Gan, K.K., E-mail: gan@mps.ohio-state.edu [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Buchholz, P.; Heidbrink, S. [Fachbereich Physik, Universität Siegen, Siegen (Germany); Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S. [Department of Physics, The Ohio State University, Columbus, OH 43210 (United States); Vogt, M.; Ziolkowski, M. [Fachbereich Physik, Universität Siegen, Siegen (Germany)

2016-09-21

We have designed and fabricated a compact parallel optical engine for transmitting data at 5 Gb/s. The device consists of a 4-channel ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. The ASIC is designed using only core transistors in a 65 nm CMOS process to enhance the radiation-hardness. The ASIC contains an 8-bit DAC to control the bias and modulation currents of the individual channels in the VCSEL array. The performance of the optical engine up at 5 Gb/s is satisfactory.

BUSFET - A Novel Radiation-Hardened SOI Transistor

International Nuclear Information System (INIS)

Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

1999-01-01

The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, we propose a new partially-depleted SOI transistor structure that we call the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU and dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration and the depth of the source. 3-D simulations show that for a doping concentration of 10 18 cm -3 and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3x10 17 cm -3 , a thicker silicon film (300 nm) must be used

Development of radiation hard scintillators

International Nuclear Information System (INIS)

Markley, F.; Woods, D.; Pla-Dalmau, A.; Foster, G.; Blackburn, R.

1992-05-01

Substantial improvements have been made in the radiation hardness of plastic scintillators. Cylinders of scintillating materials 2.2 cm in diameter and 1 cm thick have been exposed to 10 Mrads of gamma rays at a dose rate of 1 Mrad/h in a nitrogen atmosphere. One of the formulations tested showed an immediate decrease in pulse height of only 4% and has remained stable for 12 days while annealing in air. By comparison a commercial PVT scintillator showed an immediate decrease of 58% and after 43 days of annealing in air it improved to a 14% loss. The formulated sample consisted of 70 parts by weight of Dow polystyrene, 30 pbw of pentaphenyltrimethyltrisiloxane (Dow Corning DC 705 oil), 2 pbw of p-terphenyl, 0.2 pbw of tetraphenylbutadiene, and 0.5 pbw of UVASIL299LM from Ferro

Development of radiation-hard optical links for the CMS tracker at CERN

International Nuclear Information System (INIS)

Vasey, F.; Arbet-Engels, V.; Cervelli, G.; Gill, K.; Grabit, R.; Mommaert, C.; Stefanini, G.

1998-01-01

A radiation-hard optical link is under development for readout and control of the tracking detector in the future CMS experiment at the CERN Large Hadron Collider. The authors present the optical system architecture based on edge-emitting InGaAsP laser-diode transmitters operating at a wavelength of 1.3 microm, single mode fiber ribbons, multi-way connectors and InGaAsP in photodiode receivers. They report on radiation hardness tests of lasers, photodiodes, fibers and connectors. Increases of laser threshold and pin leakage currents with hadron fluence have been observed together with decreases in laser slope-efficiency and photodiode responsivity. Short lengths of single-mode optical fiber and multi-way connectors have been found to be little affected by radiation damage. They analyze the analog and digital performance of prototype optical links transmitting data generated at a 40 MSample/s rate. Distortion, settling time, bandwidth, noise, dynamic range and bit-error-rate results are discussed

R and D on Radiation Hard Active Media Based on Quartz Plates

CERN Document Server

Onel, Yasar

2014-01-01

The need for radiation-hard active media in particle detectors is prominently dictated by the future colliders and the future operations of the Large Hadron Collider. The areas of implementation range from calorimetry to beamline instrumentation to specialized forward detectors e.g. luminosity monitors. In this context, we developed the idea of utilizing quartz plates with various surface coating properties as the active medium for such detectors. Plain quartz is a pure Cerenkov radiator which has quite limited photostatistics. In order to improve the efficiency of the photodetection, various methods were investigated including radiation hard wavelength shifters, p-terphenyl or 4pct gallium doped zinc oxide. The readout options include direct coupling of the photodetector to the quartz plate, or fibers. We have studied various geometries and readout options and constructed calorimeter prototypes. Here we report on the results of the previous tests, and the recent developments, which enable several factors of ...

The radiation hardness of silica optical fiber used in the LED-fiber monitor of BLM and BESIII EMC

International Nuclear Information System (INIS)

Xue Zhen; Hu Tao; Fang Jian; Xu Zizong; Wang Xiaolian; Lü Junguang; Zhou Li; Cai Xiao; Yu Boxiang; Wang Zhigang; Sun Lijun; Sun Xilei; Zhang Aiwu

2012-01-01

LED-fiber system has been used to monitor BLM and BESIII EMC. A radiation hard silica optical fiber is essential for its stability and reliability. Three types of silica optical fibers, silicone-clad silica optical fiber with high OH - content (SeCS), silica-clad silica optical fiber with low OH - content (SCSL) and silica-clad silica opical fiber with high OH - content (SCSH) were studied. In the experiment, 12 groups of fiber samples were irradiated by 60 Co and 3 groups of fiber samples were irradiated by BEPCII background radiation. Radiation hardness: the radiation hardness of SCSH is best and meets the radiation hardness requirement for LED-fiber monitor of BLM and BESIII EMC. The transmission of SeCS and SCSH decreased to around 80% under the 60 Co-irradiation of 5 Gy and 10 Gy, respectively. The radiation hardness of SeCS is worst because of its silicone cladding. Recovery characteristics: 60 Co-irradiated by the same doses, there were both more annealable and more permanent color centers formed in SeCS than SCSL, and for the same kind of fibers, as long as the irradiated doses are under a certain amount (for example, less than 5 Gy for SeCS), the higher the doses, both the more annealable and the more permanent color centers are formed.

Improvement of optical properties and radiation hardness of NaBi(WO sub 4) sub 2 Cherenkov crystals

CERN Document Server

Zadneprovski, B I; Polyansky, E V; Devitsin, E G; Kozlov, V A; Potashov, S Yu; Terkulov, A R

2002-01-01

On the basis of the data on melt evaporation while growing NaBi(WO sub 4) sub 2 Cherenkov crystals, the formation of nonstoichiometry and most probable types of dot defects of the crystals have been considered. The influence of melt nonstoichiometry and doping with Sc on optical transmission and radiation hardness of the crystals has been experimentally investigated. The surplus of WO sub 3 has been established to increase optical transmission and radiation hardness and lack of Bi sub 2 O sub 3 in the melt to reduce radiation hardness. Sc doping is shifting the absorption edge to UV region by 30-35 nm and is increasing radiation hardness of the crystals about three-fold. Analytical estimations give the increase of the number of Cherenkov photons by a factor of 1.3, which leads to an improvement of the energy resolution of a calorimeter based on NaBi(WO sub 4) sub 2 :Sc crystals compared with undoped NaBi(WO sub 4) sub 2 of approximately 15%.

Radiation hardness properties of full-3D active edge silicon sensors

Czech Academy of Sciences Publication Activity Database

Da Via, C.; Hasi, J.; Kenney, C.; Linhart, V.; Parker, S.; Slavíček, T.; Watts, S. J.; Bém, Pavel; Horažďovský, T.; Pospíšil, S.

2008-01-01

Roč. 587, 2-3 (2008), s. 243-249 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z10480505 Keywords : silicon detectors * radiation hardness * 3D Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.019, year: 2008

Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

Science.gov (United States)

Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

2018-02-15

The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

Study of radiative leptonic events with hard photons and search for excited charged leptons at $\\sqrt{s}$ = 130-136 GeV

CERN Document Server

Abreu, P; Adye, T; Agasi, E; Aleksan, Roy; Alekseev, G D; Alemany, R; Allport, P P; Almehed, S; Amaldi, Ugo; Amato, S; Andreazza, A; Andrieux, M L; Antilogus, P; Apel, W D; Arnoud, Y; Åsman, B; Augustin, J E; Augustinus, A; Baillon, Paul; Bambade, P; Barão, F; Barate, R; Barbi, M S; Barbiellini, Guido; Bardin, Dimitri Yuri; Baroncelli, A; Bärring, O; Barrio, J A; Bartl, Walter; Bates, M J; Battaglia, Marco; Baubillier, M; Baudot, J; Becks, K H; Begalli, M; Beillière, P; Belokopytov, Yu A; Benvenuti, Alberto C; Berggren, M; Bertini, D; Bertrand, D; Bianchi, F; Bigi, M; Bilenky, S M; Billoir, P; Bloch, D; Blume, M; Bolognese, T; Bonesini, M; Bonivento, W; Booth, P S L; Bosio, C; Botner, O; Boudinov, E; Bouquet, B; Bourdarios, C; Bowcock, T J V; Bozzo, M; Branchini, P; Brand, K D; Brenke, T; Brenner, R A; Bricman, C; Brown, R C A; Brückman, P; Brunet, J M; Bugge, L; Buran, T; Burgsmüller, T; Buschmann, P; Buys, A; Cabrera, S; Caccia, M; Calvi, M; Camacho-Rozas, A J; Camporesi, T; Canale, V; Canepa, M; Cankocak, K; Cao, F; Carena, F; Carroll, L; Caso, Carlo; Castillo-Gimenez, M V; Cattai, A; Cavallo, F R; Chabaud, V; Charpentier, P; Chaussard, L; Chauveau, J; Checchia, P; Chelkov, G A; Chen, M; Chierici, R; Chliapnikov, P V; Chochula, P; Chorowicz, V; Cindro, V; Collins, P; Contreras, J L; Contri, R; Cortina, E; Cosme, G; Cossutti, F; Crawley, H B; Crennell, D J; Crosetti, G; Cuevas-Maestro, J; Czellar, S; Dahl-Jensen, Erik; Dahm, J; D'Almagne, B; Dam, M; Damgaard, G; Dauncey, P D; Davenport, Martyn; Da Silva, W; Defoix, C; Deghorain, A; Della Ricca, G; Delpierre, P A; Demaria, N; De Angelis, A; de Boer, Wim; De Brabandere, S; De Clercq, C; La Vaissière, C de; De Lotto, B; De Min, A; De Paula, L S; De Saint-Jean, C; Dijkstra, H; Di Ciaccio, Lucia; Djama, F; Dolbeau, J; Dönszelmann, M; Doroba, K; Dracos, M; Drees, J; Drees, K A; Dris, M; Durand, J D; Edsall, D M; Ehret, R; Eigen, G; Ekelöf, T J C; Ekspong, Gösta; Elsing, M; Engel, J P; Erzen, B; Espirito-Santo, M C; Falk, E; Fassouliotis, D; Feindt, Michael; Fenyuk, A; Ferrer, A; Fichet, S; Filippas-Tassos, A; Firestone, A; Fischer, P A; Föth, H; Fokitis, E; Fontanelli, F; Formenti, F; Franek, B J; Frenkiel, P; Fries, D E C; Frodesen, A G; Frühwirth, R; Fulda-Quenzer, F; Fuster, J A; Galloni, A; Gamba, D; Gandelman, M; García, C; García, J; Gaspar, C; Gasparini, U; Gavillet, P; Gazis, E N; Gelé, D; Gerber, J P; Gibbs, M; Gokieli, R; Golob, B; Gopal, Gian P; Gorn, L; Górski, M; Guz, Yu; Gracco, Valerio; Graziani, E; Grosdidier, G; Grzelak, K; Gumenyuk, S A; Gunnarsson, P; Günther, M; Guy, J; Hahn, F; Hahn, S; Hajduk, Z; Hallgren, A; Hamacher, K; Hao, W; Harris, F J; Hedberg, V; Henriques, R P; Hernández, J J; Herquet, P; Herr, H; Hessing, T L; Higón, E; Hilke, Hans Jürgen; Hill, T S; Holmgren, S O; Holt, P J; Holthuizen, D J; Hoorelbeke, S; Houlden, M A; Hrubec, Josef; Huet, K; Hultqvist, K; Jackson, J N; Jacobsson, R; Jalocha, P; Janik, R; Jarlskog, C; Jarlskog, G; Jarry, P; Jean-Marie, B; Johansson, E K; Jönsson, L B; Jönsson, P E; Joram, Christian; Juillot, P; Kaiser, M; Kapusta, F; Karafasoulis, K; Karlsson, M; Karvelas, E; Katsanevas, S; Katsoufis, E C; Keränen, R; Khokhlov, Yu A; Khomenko, B A; Khovanskii, N N; King, B J; Kjaer, N J; Klein, H; Klovning, A; Kluit, P M; Köne, B; Kokkinias, P; Koratzinos, M; Korcyl, K; Kostyukhin, V; Kourkoumelis, C; Kuznetsov, O; Kramer, P H; Krammer, Manfred; Kreuter, C; Kronkvist, I J; Krumshtein, Z; Krupinski, W; Kubinec, P; Kucewicz, W; Kurvinen, K L; Lacasta, C; Laktineh, I; Lamblot, S; Lamsa, J; Lanceri, L; Lane, D W; Langefeld, P; Lapin, V; Last, I; Laugier, J P; Lauhakangas, R; Ledroit, F; Lefébure, V; Legan, C K; Leitner, R; Lemoigne, Y; Lemonne, J; Lenzen, Georg; Lepeltier, V; Lesiak, T; Libby, J; Liko, D; Lindner, R; Lipniacka, A; Lippi, I; Lörstad, B; Loken, J G; López, J M; Loukas, D; Lutz, P; Lyons, L; MacNaughton, J N; Maehlum, G; Maio, A; Malychev, V; Mandl, F; Marco, J; Marco, R P; Maréchal, B; Margoni, M; Marin, J C; Mariotti, C; Markou, A; Maron, T; Martínez-Rivero, C; Martínez-Vidal, F; Martí i García, S; Matorras, F; Matteuzzi, C; Matthiae, Giorgio; Mazzucato, M; McCubbin, M L; McKay, R; McNulty, R; Medbo, J; Merk, M; Meroni, C; Meyer, S; Meyer, W T; Myagkov, A; Michelotto, M; Migliore, E; Mirabito, L; Mitaroff, Winfried A; Mjörnmark, U; Moa, T; Møller, R; Mönig, K; Monge, M R; Morettini, P; Müller, H; Mundim, L M; Murray, W J; Muryn, B; Myatt, Gerald; Naraghi, F; Navarria, Francesco Luigi; Navas, S; Nawrocki, K; Negri, P; Némécek, S; Neumann, W; Neumeister, N; Nicolaidou, R; Nielsen, B S; Nieuwenhuizen, M; Nikolaenko, V; Niss, P; Nomerotski, A; Normand, Ainsley; Novák, M; Oberschulte-Beckmann, W; Obraztsov, V F; Olshevskii, A G; Onofre, A; Orava, Risto; Österberg, K; Ouraou, A; Paganini, P; Paganoni, M; Pagès, P; Palka, H; Papadopoulou, T D; Papageorgiou, K; Pape, L; Parkes, C; Parodi, F; Passeri, A; Pegoraro, M; Peralta, L; Pernegger, H; Pernicka, Manfred; Perrotta, A; Petridou, C; Petrolini, A; Petrovykh, M; Phillips, H T; Piana, G; Pierre, F; Pimenta, M; Pindo, M; Plaszczynski, S; Podobrin, O; Pol, M E; Polok, G; Poropat, P; Pozdnyakov, V; Prest, M; Privitera, P; Pukhaeva, N; Pullia, Antonio; Radojicic, D; Ragazzi, S; Rahmani, H; Rames, J; Ratoff, P N; Read, A L; Reale, M; Rebecchi, P; Redaelli, N G; Regler, Meinhard; Reid, D; Renton, P B; Resvanis, L K; Richard, F; Richardson, J; Rídky, J; Rinaudo, G; Ripp, I; Romero, A; Roncagliolo, I; Ronchese, P; Roos, L; Rosenberg, E I; Rosso, E; Roudeau, Patrick; Rovelli, T; Rückstuhl, W; Ruhlmann-Kleider, V; Ruiz, A; Rybicki, K; Saarikko, H; Sacquin, Yu; Sadovskii, A; Sahr, O; Sajot, G; Salt, J; Sánchez, J; Sannino, M; Schimmelpfennig, M; Schneider, H; Schwickerath, U; Schyns, M A E; Sciolla, G; Scuri, F; Seager, P; Sedykh, Yu; Segar, A M; Seitz, A; Sekulin, R L; Serbelloni, L; Shellard, R C; Siccama, I; Siegrist, P; Simonetti, S; Simonetto, F; Sissakian, A N; Sitár, B; Skaali, T B; Smadja, G; Smirnov, N; Smirnova, O G; Smith, G R; Solokov, A; Sosnowski, R; Souza-Santos, D; Spiriti, E; Sponholz, P; Squarcia, S; Stanescu, C; Stapnes, Steinar; Stavitski, I; Stevenson, K; Stichelbaut, F; Stocchi, A; Strauss, J; Strub, R; Stugu, B; Szczekowski, M; Szeptycka, M; Tabarelli de Fatis, T; Tavernet, J P; Thomas, J; Tilquin, A; Timmermans, J; Tkatchev, L G; Todorov, T; Todorova, S; Toet, D Z; Tomaradze, A G; Tomé, B; Tonazzo, A; Tortora, L; Tranströmer, G; Treille, D; Trischuk, W; Tristram, G; Trombini, A; Troncon, C; Tsirou, A L; Turluer, M L; Tyapkin, I A; Tyndel, M; Tzamarias, S; Überschär, B; Ullaland, O; Uvarov, V; Valenti, G; Vallazza, E; Van der Velde, C; van Apeldoorn, G W; van Dam, P; Van Doninck, W K; Van Eldik, J; Vassilopoulos, N; Vegni, G; Ventura, L; Venus, W A; Verbeure, F; Verlato, M; Vertogradov, L S; Vilanova, D; Vincent, P; Vitale, L; Vlasov, E; Vodopyanov, A S; Vrba, V; Wahlen, H; Walck, C; Weierstall, M; Weilhammer, Peter; Weiser, C; Wetherell, Alan M; Wicke, D; Wickens, J H; Wielers, M; Wilkinson, G R; Williams, W S C; Winter, M; Witek, M; Woschnagg, K; Yip, K; Yushchenko, O P; Zach, F; Zaitsev, A; Zalewska-Bak, A; Zalewski, Piotr; Zavrtanik, D; Zevgolatakos, E; Zimin, N I; Zito, M; Zontar, D; Zucchelli, G C; Zumerle, G

1996-01-01

During the last 1995 data acquisition period at LEP, the DELPHI experiment collected an integrated luminosity of $5.9$ pb$^{-1}$ at centre-of-mass energies of 130 GeV and 136 GeV. Radiative leptonic events ($e, \\mu, \\tau$) with high energy photons were studied and compared to Standard Model predictions. The data were used to search for charged excited leptons decaying through an electromagnetic transition. No significant signal was found. From the search for pair produced excited leptons, the limits $m_{e^*} > 62.5$ GeV/$c^2$, $m_{\\mu^*} > 62.6$ GeV/$c^2$ and $m_{\\tau^*} > 62.2$ GeV/$c^2$ at 95\\% confidence level were established. For single excited lepton production, upper limits on the ratio $\\lambda/m_{\\ell^*}$ of the coupling of the excited charged lepton to its mass were derived.

Total-dose radiation-induced degradation of thin film ferroelectric capacitors

International Nuclear Information System (INIS)

Schwank, J.R.; Nasby, R.D.; Miller, S.L.; Rodgers, M.S.; Dressendorfer, P.V.

1990-01-01

Thin film PbZr y Ti 1-y O 3 (PZT) ferroelectric memories offer the potential for radiation-hardened, high-speed nonvolatile memories with good retention and fatigue properties. In this paper we explore in detail the radiation hardness of PZT ferroelectric capacitors. Ferroelectric capacitors were irradiated using x-ray and Co-60 sources to dose levels up to 16 Mrad(Si). The capacitors were characterized for their memory properties both before and after irradiation. The radiation hardness was process dependent. Three out of four processes resulted in capacitors that showed less than 30% radiation-induced degradation in retained polarization charge and remanent polarization after irradiating to 16 Mrad(Si). On the other hand, one of the processes showed significant radiation-induced degradation in retained polarization charge and remanent polarization at dose levels above 1 Mrad(Si). The decrease in retained polarization charge appears to be due to an alteration of the switching characteristics of the ferroelectric due to changes in the internal fields. The radiation-induced degradation is recoverable by a postirradiation biased anneal and can be prevented entirely if devices are cycled during irradiation. The authors have developed a model to simulate the observed degradation

Thermodynamics and structure of liquid alkali metals from the charged-hard-sphere reference fluid

International Nuclear Information System (INIS)

Lai, S.K.; Akinlade, O.; Tosi, M.P.

1989-12-01

The evaluation of thermodynamic properties of liquid alkali metals is re-examined in the approach based on the Gibbs-Bogoliubov inequality and using the fluid of charged hard spheres in the mean spherical approximation as reference system, with a view to achieving consistency with the liquid structure factor. The perturbative variational calculation of the Helmholtz free energy is based on an ab initio and highly reliable nonlocal pseudopotential. Only limited improvement is found in the calculated thermodynamic functions, even when full advantage is taken of the two variational parameters inherent in this approach. The role of thermodynamic self-consistency between the equations of state of the reference fluid derived from the routes of the internal energy and of the virial theorem is then discussed, using previous results by Hoye and Stell. An approximate evaluation of the corresponding contribution to the free energy of liquid alkali metals yields appreciable improvements in both the thermodynamic functions and the liquid structure factor. It thus appears that an accurate treatment of thermodynamic self-consistency in the charged-hard-sphere system may help to resolve some of the difficulties that are commonly met in the evaluation of thermodynamic and structural properties of liquid metals. (author). 55 refs, 4 figs, 4 tabs

A Radiation-Hard Analog Memory In The AVLSI-RA Process

International Nuclear Information System (INIS)

Britton, C.L. Jr.; Wintenberg, A.L.; Read, K.F.; Simpson, M.L.; Young, G.R.; Clonts, L.G.; Kennedy, E.J.; Smith, R.S.; Swann, B.K.; Musser, J.A.

1995-01-01

A radiation hardened analog memory for an Interpolating Pad Camber has been designed at Oak Ridge National Laboratory and fabricated by Harris Semiconductor in the AVLSI-RA CMOS process. The goal was to develop a rad-hard analog pipeline that would deliver approximately 9-bit performance, a readout settling time of 500ns following read enable, an input and output dynamic range of +/-2.25V, a corrected rms pedestal of approximately 5mV or less, and a power dissipation of less than 10mW/channel. The pre- and post-radiation measurements to 5MRad are presented

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Study of runaway electrons using dosimetry of hard x-ray radiations in Damavand tokamak

Energy Technology Data Exchange (ETDEWEB)

Rasouli, C.; Pourshahab, B.; Rasouli, H. [Plasma Physics and Nuclear Fusion Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of); Hosseini Pooya, S. M.; Orouji, T. [Radiation Application Research School, Nuclear Science and Technology Research Institute, AEOI, PO Box 14155-1339, Tehran (Iran, Islamic Republic of)

2014-05-15

In this work several studies have been conducted on hard x-ray emissions of Damavand tokamak based on radiation dosimetry using the Thermoluminescence method. The goal was to understand interactions of runaway electrons with plasma particles, vessel wall, and plasma facing components. Total of 354 GR-200 (LiF:Mg,Cu,P) thermoluminescence dosimeter (TLD) crystals have been placed on 118 points – three TLDs per point – to map hard x-ray radiation doses on the exterior of the vacuum vessel. Results show two distinctive levels of x-ray radiations doses on the exterior of the vessel. The low-dose area on which measured dose is about 0.5 mSv/shot. In the low-dose area there is no particular component inside the vessel. On the contrary, on high-dose area of the vessel, x-ray radiations dose exceeds 30 mSv/shot. The high-dose area coincides with the position of limiters, magnetic probe ducts, and vacuum vessel intersections. Among the high-dose areas, the highest level of dose is measured in the position of the limiter, which could be due to its direct contact with the plasma column and with runaway electrons. Direct collisions of runaway electrons with the vessel wall and plasma facing components make a major contribution for production of hard x-ray photons in Damavand tokamak.

A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

CERN Multimedia

2002-01-01

% RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

Radiation and Internal Charging Environments for Thin Dielectrics in Interplanetary Space

Science.gov (United States)

Minow, Joseph I.; Parker, Linda Neergaard; Altstatt, Richard L.

2004-01-01

Spacecraft designs using solar sails for propulsion or thin membranes to shade instruments from the sun to achieve cryogenic operating temperatures are being considered for a number of missions in the next decades. A common feature of these designs are thin dielectric materials that will be exposed to the solar wind, solar energetic particle events, and the distant magnetotail plasma environments encountered by spacecraft in orbit about the Earth-Sun L2 point. This paper will discuss the relevant radiation and internal charging environments developed to support spacecraft design for both total dose radiation effects as well as dose rate dependent phenomenon, such as internal charging in the solar wind and distant magnetotail environments. We will describe the development of radiation and internal charging environment models based on nearly a complete solar cycle of Ulysses solar wind plasma measurements over a complete range of heliocentric latitudes and the early years of the Geotail mission where distant magnetotail plasma environments were sampled beyond X(sub GSE) = -100 Re to nearly L2 (X(sub GSE) -236 Re). Example applications of the environment models are shown to demonstrate the radiation and internal charging environments of thin materials exposed to the interplanetary space plasma environments.

Life evaluation of FR-CV cable on thermal-radiation combined aging by micro-hardness

International Nuclear Information System (INIS)

Sugiyama, Masahiko; Ogata, Akimasa; Nitta, Makoto; Tani, Tsuneo; Yagi, Toshiaki; Seguchi, Tadao.

1996-01-01

For the evaluation of cable life for the application to nuclear facilities, the accelerated test was conducted by the combination of radiation and thermal oxidation. The degradation of FR-CV cable by the aging was monitored by tensile test, micro-hardness test, and gel-fraction measurement. The micro-hardness increased with the progress of degradation and related well with decrease of ultimate elongation of the sheath material, and was also reflected by the loss of plasticizer. The micro-hardness technique has a possibility to detect the degradation of cable as a non-destructive detector. (author)

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Hard electronics; Hard electronics

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

Hard material technologies were surveyed to establish the hard electronic technology which offers superior characteristics under hard operational or environmental conditions as compared with conventional Si devices. The following technologies were separately surveyed: (1) The device and integration technologies of wide gap hard semiconductors such as SiC, diamond and nitride, (2) The technology of hard semiconductor devices for vacuum micro- electronics technology, and (3) The technology of hard new material devices for oxides. The formation technology of oxide thin films made remarkable progress after discovery of oxide superconductor materials, resulting in development of an atomic layer growth method and mist deposition method. This leading research is expected to solve such issues difficult to be easily realized by current Si technology as high-power, high-frequency and low-loss devices in power electronics, high temperature-proof and radiation-proof devices in ultimate electronics, and high-speed and dense- integrated devices in information electronics. 432 refs., 136 figs., 15 tabs.

A CVD diamond beam telescope for charged particle tracking

CERN Document Server

Adam, W; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W; Doroshenko, J; Doucet, M; van Eijk, B; Fallou, A; Fischer, P; Fizzotti, F; Kania, D R; Gan, K K; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kaplon, J; Kass, R; Keil, M; Knöpfle, K T; Koeth, T W; Krammer, Manfred; Meuser, S; Lo Giudice, A; MacLynne, L; Manfredotti, C; Meier, D; Menichelli, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Riester, J L; Roe, S; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Trischuk, W; Tromson, D; Vittone, E; Weilhammer, Peter; Wermes, N; Wetstein, M; Zeuner, W; Zöller, M

2002-01-01

CVD diamond is a radiation hard sensor material which may be used for charged particle tracking near the interaction region in experiments at high luminosity colliders. The goal of the work described here is to investigate the use of several detector planes made of CVD diamond strip sensors for charged particle tracking. Towards this end a tracking telescope composed entirely of CVD diamond planes has been constructed. The telescope was tested in muon beams and its tracking capability has been investigated.

Classical radiation theory of charged particles moving in electromagnetic fields in nonabsorbable isotropic media

International Nuclear Information System (INIS)

Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A.

2002-01-01

The integral expressions for spectral-angular and spectral distributions of the radiation power of heterogeneous charged particles system moving on arbitrary trajectory in nonabsorbable isotropic media media with ε≠1 , μ≠1 are obtained using the Lorentz's self-interaction method. In this method a proper electromagnetic field, acting on electron, is defined as a semi difference between retarded and advanced potentials (Dirac, 1938). The power spectrum of Cherenkov radiation for the linear uniformly moving heterogeneous system of charged particles are obtained. It is found that the expression for the radiation power of heterogeneous system of charged particles becomes simplified when a system of charged particles is homogeneous. In this case the radiation power includes the coherent factor. It is shown what the redistribution effects in energy of the radiation spectrum of the studied system are caused by the coherent factor. The radiation spectrum of the system of electrons moving in a circle in this medium is discrete. The Doppler effect causes the appearance of the new harmonics for the system of electrons moving in a spiral. These harmonics form the region of continuous radiation spectrum. (authors)

Electromagnetic radiation of charged particles in stochastic motion

Energy Technology Data Exchange (ETDEWEB)

Harko, Tiberiu [Babes-Bolyai University, Department of Physics, Cluj-Napoca (Romania); University College London, Department of Mathematics, London (United Kingdom); Mocanu, Gabriela [Astronomical Institute of the Romanian Academy, Cluj-Napoca (Romania)

2016-03-15

The study of the Brownian motion of a charged particle in electric and magnetic fields has many important applications in plasma and heavy ions physics, as well as in astrophysics. In the present paper we consider the electromagnetic radiation properties of a charged non-relativistic particle in the presence of electric and magnetic fields, of an exterior non-electromagnetic potential, and of a friction and stochastic force, respectively. We describe the motion of the charged particle by a Langevin and generalized Langevin type stochastic differential equation. We investigate in detail the cases of the Brownian motion with or without memory in a constant electric field, in the presence of an external harmonic potential, and of a constant magnetic field. In all cases the corresponding Langevin equations are solved numerically, and a full description of the spectrum of the emitted radiation and of the physical properties of the motion is obtained. The power spectral density of the emitted power is also obtained for each case, and, for all considered oscillating systems, it shows the presence of peaks, corresponding to certain intervals of the frequency. (orig.)

Study of the Radiation-Hardness of VCSEL and PIN

CERN Document Server

Gan, K K; Fernando, W; Kagan, H P; Kass, R D; Lebbai, M R M; Merritt, H; Moore, J R; Nagarkar, A; Rizatdinova, F; Skubic, P L; Smith, D S; Strang, M

2009-01-01

The silicon trackers of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Geneva) use optical links for data transmission. An upgrade of the trackers is planned for the Super LHC (SLHC), an upgraded LHC with ten times higher luminosity. We study the radiation-hardness of VCSELs (Vertical-Cavity Surface-Emitting Laser) and GaAs and silicon PINs using 24 GeV/c protons at CERN for possible application in the data transmission upgrade. The optical power of VCSEL arrays decreases significantly after the irradiation but can be partially annealed with high drive currents. The responsivities of the PIN diodes also decrease significantly after irradiation, but can be recovered by operating at higher bias voltage. This provides a simple mechanism to recover from the radiation damage.

Radiation hard silicon detectors - developments by the RD48(ROSE) collaboration

Czech Academy of Sciences Publication Activity Database

Lindström, G.; Kohout, Z.; Pospíšil, S.; Šícho, Petr; Sopko, B.; Vrba, Václav; Wilhelm, I.

2001-01-01

Roč. 466, č. 2 (2001), s. 308-326 ISSN 0168-9002 R&D Projects: GA MŠk LN00A006 Institutional research plan: CEZ:AV0Z1010920 Keywords : silicon detectors * radiation hardness * defect engineering * non ionizing energy los Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.026, year: 2001

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Final Technical Report Radiation Hard Tight Pitch GaInP SPAD Arrays for High Energy Physics

Energy Technology Data Exchange (ETDEWEB)

Harmon, Eric

2018-01-26

The specialized photodetectors used in high energy physics experiments often need to remain extremely sensitive for years despite radiation induced damage caused by the constant bombardment of high energy particles. To solve this problem, LightSpin Technologies, Inc. in collaboration with Prof. Bradley Cox and the University of Virginia is developing radiation-hard GaInP photodetectors which are projected to be extraordinarily radiation hard, theoretically capable of withstanding a 100,000-fold higher radiation dose than silicon. In this Phase I SBIR project, LightSpin investigated the performance and radiation hardness of fifth generation GaInP SPAD arrays. These fifth generation devices used a new planar processing approach that enables very tight pitch arrays to be produced. High performance devices with SPAD pitches of 11, 15, and 25 μm were successfully demonstrated, which greatly increased the dynamic range and maximum count rate of the devices. High maximum count rates are critical when considering radiation hardness, since radiation damage causes a proportional increase in the dark count rate, causing SPAD arrays with low maximum count rates (large SPAD pitches) to fail. These GaInP SPAD array Photomultiplier Chips™ were irradiated with protons, electrons, and neutrons. Initial irradiation results were disappointing, with the post-irradiation devices exhibiting excessively high dark currents. The degradation was traced to surface leakage currents that were largely eliminated through the use of trenches etched around the exterior of the Photomultiplier Chip™ (not between SPAD elements). A second round of irradiations on Photomultiplier Chips™ with trenches proved substantially more successful, with post-irradiation dark currents remaining relatively low, though dark count rates were observed to increase at the highest doses. Preliminary analysis of the post-irradiation devices is promising … many of the irradiated Photomultiplier Chips™ still

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

Charge order-superfluidity transition in a two-dimensional system of hard-core bosons and emerging domain structures

Science.gov (United States)

Moskvin, A. S.; Panov, Yu. D.; Rybakov, F. N.; Borisov, A. B.

2017-11-01

We have used high-performance parallel computations by NVIDIA graphics cards applying the method of nonlinear conjugate gradients and Monte Carlo method to observe directly the developing ground state configuration of a two-dimensional hard-core boson system with decrease in temperature, and its evolution with deviation from a half-filling. This has allowed us to explore unconventional features of a charge order—superfluidity phase transition, specifically, formation of an irregular domain structure, emergence of a filamentary superfluid structure that condenses within of the charge-ordered phase domain antiphase boundaries, and formation and evolution of various topological structures.

Monitoring system for testing the radiation hardness of a KINTEX-7 FPGA

Energy Technology Data Exchange (ETDEWEB)

Cojocariu, L. N., E-mail: lucian.cojocariu@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); Stefan cel Mare University of Suceava (Universitatii 13, Suceava, Romania) (Romania); Placinta, V. M., E-mail: vlad-mihai.placinta@cern.ch [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania); University POLITEHNICA of Bucharest (Splaiul Independentei 313, Bucharest, Romania) (Romania); Dumitru, L., E-mail: dlaur@nipne.ro [Horia Hulubei National Institute for R& D in Physics and Nuclear Engineering (Reactorului 30, MG, Romania) (Romania)

2016-03-25

A much more efficient Ring Imaging Cherenkov sub-detector system will be rebuilt in the second long shutdown of Large Hadron Collider for the LHCb experiment. Radiation-hard electronic components together with Commercial Off-The-Shelf ones will be used in the new Cherenkov photon detection system architecture. An irradiation program was foreseen to determine the radiation tolerance for the new electronic devices, including a Field Programmable Gate Array from KINTEX-7 family of XILINX. An automated test bench for online monitoring of the XC7K70T KINTEX-7 device operation in radiation conditions was designed and implemented by the LHCb Romanian group.

Process and devices of detection of hard electromagnetic or particle radiations using a superconducting element

International Nuclear Information System (INIS)

Drukier, A.K.; Valette, Claude; Waysand, Georges.

1975-01-01

The invention relates to processes and systems for the detection of hard electromagnetic or particle radiations and the sensors fitted to these systems. 'Hard radiations' means those whose energy is greater than a variable threshold, depending on the applications, but always more than 5 keV. The use of these sensors and the associated systems can therefore be envisaged in radiography and also in emission gammagraphy in the biological, anatomic and medical fields. In these processes, in order to detect a photon or a radiation particle, use is made of the transition phenomenon of a homogeneous grain of superconducting material of the first kind, from the metastable superconducting state to the normal state, under the effect of a photoelectron ejected by the impact of the photon or of the particle on the grain of superconducting material [fr

Radiation hardness of CMOS monolithic active pixel sensors manufactured in a 0.18 μm CMOS process

Energy Technology Data Exchange (ETDEWEB)

Linnik, Benjamin [Goethe-Universitaet Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

2015-07-01

CMOS Monolithic Active Pixels Sensors (MAPS) are considered as the technology of choice for various vertex detectors in particle and heavy-ion physics including the STAR HFT, the upgrade of the ALICE ITS, the future ILC detectors and the CBM experiment at FAIR. To match the requirements of those detectors, their hardness to radiation is being improved, among others in a joined research activity of the Goethe University Frankfurt and the IPHC Strasbourg. It was assumed that combining an improved high resistivity (1-8 kΩcm) sensitive medium with the features of a 0.18 μm CMOS process, is suited to reach substantial improvements in terms of radiation hardness as compared to earlier sensor designs. This strategy was tested with a novel generation of sensor prototypes named MIMOSA-32 and MIMOSA-34. We show results on the radiation hardness of those sensors and discuss its impact on the design of future vertex detectors.

Evolution of Xe spectrum and ion charge under sudden incoming radiation

Science.gov (United States)

Klapisch, Marcel; Busquet, Michel

2012-06-01

Experiments [1] and simulations of Xe at high temperature were recently reported, due to the possible scaling of astrophysical radiative shocks [2]. We used the newest version of HULLAC [3] to compute energy levels, radiative and collisional transition rates and level populations in a Coronal Radiative Model for the ions Xe9+ to Xe44+ (36263 configurations), at electron temperature of 100 eV and electron density of 10^19 -- 10^21 e/cm^3, in the presence of an external Planckian radiation field. Static and time dependent influence of the radiation on ion charge and spectrum is described. We show an effect of shell structure on relaxation of ion charge when the radiation field is suddenly turn on.[4pt] [1] Busquet, M., Thais, F., Gonzalez, M., et al., J. App. Phys. 107, 083302 (2010).[0pt] [2] Ryutov, D., Drake, R. P., Kane, J., et al., Astrophys. J. 518, 821 (1999).[0pt] [3] Klapisch, M. and Busquet, M., High Ener. Dens. Phys. 7, 98 (2011).

Radiation hardness of superconducting magnet insulation materials for FAIR

International Nuclear Information System (INIS)

Seidl, Tim

2013-03-01

This thesis focuses on radiation degradation studies of polyimide, polyepoxy/glass-fiber composites and other technical components used, for example, in the superconducting magnets of new ion accelerators such as the planned International Facility for Antiproton and Ion Research (FAIR) at the GSI Helmholtz Center of Heavy Ion Research (GSI) in Darmstadt. As accelerators are becoming more powerful, i.e., providing larger energies and beam intensities, the potential risk of radiation damage to the components increases. Reliable data of the radiation hardness of accelerator materials and components concerning electrical, thermal and other technical relevant properties are of great interest also for other facilities such as the Large Hadron Collider (LHC) of CERN. Dependent on the position of the different components, induced radiation due to beam losses consists of a cocktail of gammas, neutrons, protons, and heavier particles. Although the number of heavy fragments of the initial projectiles is small compared to neutrons, protons, or light fragments (e.g. ? particles), their large energy deposition can induce extensive damage at rather low fluences (dose calculations show that the contribution of heavy ions to the total accumulated dose can reach 80 %). For this reason, defined radiation experiments were conducted using different energetic ion beams (from protons to uranium) and gamma radiation from a Co-60 source. The induced changes were analyzed by means of in-situ and ex-situ analytical methods, e.g. ultraviolet-visible and infrared spectroscopy, residual gas analysis, thermal gravimetric analysis, dielectric strength measurements, measurements of low temperature thermal properties, and performance tests. In all cases, the radiation induces a change in molecular structure as well as loss of functional material properties. The amount of radiation damage is found to be sensitive to the used type of ionizing radiation and the long term stability of the materials is

Super-radiant Smith–Purcell radiation from periodic line charges

International Nuclear Information System (INIS)

Li, D.; Hangyo, M.; Tsunawaki, Y.; Yang, Z.; Wei, Y.; Miyamoto, S; Asakawa, M.R.; Imasaki, K.

2012-01-01

Smith–Purcell radiation occurs when an electron passes close to the surface of a metallic grating. The radiation becomes coherent when the length of the electron bunch is smaller than the wavelength of the radiation. A train of periodic bunches can enhance the spectral intensity by changing the angular and spectral distribution of the radiation. This is called super-radiant Smith–Purcell radiation, and has been observed in experiments and particle-in-cell simulations. In this paper, we introduce a new method to study this effect by calculating the reflected waves of an incident evanescent wave from periodic line charges. The reflection coefficients are numerically computed, and the spectral distributions of the super-radiant radiation are demonstrated. These analytical results are in agreement with those obtained through part-in-cell simulations.

Features of destruction of solids by laser radiation in process of formation of multiply charged ions

International Nuclear Information System (INIS)

Bedilov, R.M.; Bedilov, M.R.; Sabitov, M.M.; Matnazarov, A.; Niyozov, B.

2004-01-01

Full text: It is known, under interaction of laser radiation with solid surface a power density q > 0.01 W/cm 2 are observed destruction of a solid and issue of electrons, ions, neutrals, neutrons, plasmas, and also radiation in a wide ranges of a spectra. Despite of a plenty of works, devoted to study of processes of interaction, the studies of feature of destruction of solids by laser beam in process of formation multiply charged ions are insufficiently investigated. The results of study feature of destruction of solids by laser radiation in process of formation multiply charged ions are given in this work. In our experiments, we used the mass spectrometer with single-channel laser radiation. The laser installation had the following parameters: a power density of laser radiation q=(0.1-50) GW/cm 2 ; the angle of incidence a=18 deg. to the target surface Al, (W). It was obtained experimentally dynamics of morphology of destruction and also mass - charge and energy spectra of multiply charged ions formed under interaction of laser radiation with Al (W) in the intensity range q=(0.1-50) GW/cm 2 . These studies showed features of destruction Al(W) by laser radiation, i.e. invariable of value evaporation mass from a surface of a solid increase as the laser intensity q. But thus temperature a pair increases in accordance with increase of flow density of a laser radiation. Increase of temperature the pair gives in formation of multiply charged plasma. It is typical that, as q of the laser increases the maximum charge number of ions in laser plasma considerably increase and their energy spectra extend toward higher energies. For example, under q=0.1 GW/cm 2 and 50 GW/cm 2 the maximum charge number of ions Al (W) are equal to Z max = 1 and 7, respectively. From the experimental data obtained, we can conclude that, the formed multiply charged plasma practically completely absorption laser radiation and 'shielding' a target surface for various metals at power densities

Radiation hard silicon microstrip detectors for Tevatron experiments

International Nuclear Information System (INIS)

Korjenevski, Sergey

2004-01-01

The Silicon Microstrip Tracking detectors at the CDF and D0 experiments have now been operating for almost three years at Fermilab. These detectors were designed originally for an integrated luminosity of 2fb -1 . As the expected luminosity for Run IIb at the Tevatron collider was initially envisioned to reach 15fb -1 , radiation tolerances of both devices were revisited, culminating in proposals for new systems. With reduced expectations for total luminosity at ∼6fb -1 , the full detector-replacement projects were terminated. The CDF detector is expected nevertheless to cope efficiently with the lower anticipated dose, however, the D0 experiment is planning a smaller-scale project: a Layer-0 (L0) upgrade of the silicon tracker (D0SMT). The new device will fit between the beam line and the inner layer of the current Tracker. Built of single-sided sensors, this upgrade is expected to perform well in the harsh radiation environment, and be able to withstand an integrated luminosity of 15fb -1 . Prototypes of Run IIb sensors were irradiated using 10MeV protons at the tandem Van de Graaff at the James R. McDonald Laboratory at Kansas State University. A fit to the 10MeV proton data yields a damage parameter αp=11x10-17Acm. This is consistent with results from RD48 (αp=9.9x10-17Acm). The scaling of damage to 1MeV neutron fluence uses a hardness factor (κ) derived from the non-ionizing components of the energy loss (NEIL). NEIL predicts a hardness factor of 3.87 for 10MeV protons. We obtained an experimental value of this factor of 2.54, or 34% smaller than scaling predictions from NEIL

Influence of ionizing radiation on optical hardness of transparent dielectrics to action of huge intensity laser light

International Nuclear Information System (INIS)

Bedilov, M.R.; Khalilov, R.A.

2006-01-01

Full text: This paper presents results of researches of optical hardness of γ -irradiated with doze 10 4 - 10 9 rad alkali-silicate (K, GLS, LGS) and quartz (KU, KV, KSG) glasses against influence of radiation neodymium laser with intensity q = 0,1-1000 GWt/cm 2 . It is observed, that the laser produces damage of surface and volume of investigated glasses before and after γ-irradiation. This damage has threshold character and is always accompanied by a bright luminescence of plasma. Definition of threshold values of intensity superficial q s and volumetric q d laser produced damage was made by the complex method - fixing the moment of damage of transparent dielectric by simultaneous registration of the laser impulse which has passed through plasma of breakdown, mass-charge spectrum of ions of plasma and measuring the energy falling on the glass, and of penetrated and mirror-image radiations; and by optical microscopy. This method of research of influence γ-induced in transparent dielectric radiating defects on its optical stability against influence of laser radiation allows not only to define values q s and q d in the investigated interval of dozes, but also to investigate in details physical phenomena taking place in this process of interaction. On the basis of the received data quantitative characteristics of optical durability of the investigated glasses on wave length of λ1,06 microns depending on dozes of γ-irradiation and intensity of laser radiation are made. Doze dependences of charge and power spectra and quantitative characteristics of ions of plasma of breakdown were investigated at q≥ q s . In the investigated interval of dozes of γ- irradiation and intensity of laser radiation by a method of optical microscopy the morphology of occurring laser damage as surfaces, and volume of glass is also studied. It is found, that γ -induced defects in investigated glasses strongly effect on thresholds of damage q s and q d and on characteristics of ions

Monte Carlo simulation and equation of state for flexible charged hard-sphere chain fluids: Polyampholyte and polyelectrolyte solutions

International Nuclear Information System (INIS)

Jiang, Hao; Adidharma, Hertanto

2014-01-01

The thermodynamic modeling of flexible charged hard-sphere chains representing polyampholyte or polyelectrolyte molecules in solution is considered. The excess Helmholtz energy and osmotic coefficients of solutions containing short polyampholyte and the osmotic coefficients of solutions containing short polyelectrolytes are determined by performing canonical and isobaric-isothermal Monte Carlo simulations. A new equation of state based on the thermodynamic perturbation theory is also proposed for flexible charged hard-sphere chains. For the modeling of such chains, the use of solely the structure information of monomer fluid for calculating the chain contribution is found to be insufficient and more detailed structure information must therefore be considered. Two approaches, i.e., the dimer and dimer-monomer approaches, are explored to obtain the contribution of the chain formation to the Helmholtz energy. By comparing with the simulation results, the equation of state with either the dimer or dimer-monomer approach accurately predicts the excess Helmholtz energy and osmotic coefficients of polyampholyte and polyelectrolyte solutions except at very low density. It also well captures the effect of temperature on the thermodynamic properties of these solutions

Evaluation of radiation tolerance of FETs used for Astro-E2 hard X-ray detector (HXD-II)

International Nuclear Information System (INIS)

Itoh, Takeshi; Niko, Hisako; Kokubun, Motohide; Makishima, Kazuo; Kawaharada, Madoka; Takahashi, Isao; Miyasaka, Hiromasa

2005-01-01

We evaluated the radiation tolerance of three types of metal-can MOS Field Effect Transistors (FETs). They are candidates for flight electronics of the Hard X-ray Detector (HXD-II) experiment which is onboard the cosmic X-ray satellite Astro-E2 scheduled for launch in 2005. We irradiated FETs with a Co60γ-ray source under several different experimental conditions, and measured changes in their I-V characteristic curves. After a 10krad irradiation during which the gate voltage is set at 0V, all types showed a decrease in the switching voltage by ∼0.2-0.4V. In addition, the gate conductance increased under some irradiation conditions. These experimental results may be explained in terms of trapped charges and boundary levels in the oxide layer beneath the gate electrode. We have confirmed that at least two types of FETs can be used in our satellite-borne experiment, one as relay-driving FETs and the other in TTL-ECL conversion circuits

Radiation signatures from a locally energized flaring loop

Science.gov (United States)

Emslie, A. G.; Vlahos, L.

1980-01-01

The radiation signatures from a locally energized solar flare loop based on the physical properties of the energy release mechanisms were consistent with hard X-ray, microwave, and EUV observations for plausible source parameters. It was found that a suprathermal tail of high energy electrons is produced by the primary energy release, and that the number of energetic charged particles ejected into the interplanetary medium in the model is consistent with observations. The radiation signature model predicts that the intrinsic polarization of the hard X-ray burst should increase over the photon energy range of 20 to 100 keV.

Solid-state radiation detectors for active personal dosimetry and radiations source tracking

International Nuclear Information System (INIS)

Talpalariu, Corneliu; Talpalariu, Jeni; Matei, Corina; Lita, Ioan; Popescu, Oana

2010-01-01

We report on the design of the readout electronics using PIN diode radiation detector of 5 mm thickness for nuclear safety and active personal dosimetry. Our effort consisted in designing and fabricating the electronics to reflect the needs of gamma radiations dosimetry and hybrids PIN diode arrays for charged particle detectors. We report results obtained during testing and characterizing the new devices in gamma fields, operating at room temperature. There were determined the energy spectrum resolution, radiation hardness and readout rate. Also, data recording methods and parallel acquisition problems from a transducer matrix are presented. (authors)

Radiative loss and charge exchange in low energy Na - Ca+ collisions

Science.gov (United States)

McLaughlin, B. M.; McAlpine, K.; McCann, J. F.; Pattillo, R.; Stancil, P. C.; Forrey, R. C.; Babb, J. F.

2016-05-01

Experiments on radiative loss and capture are currently being performed at the University of Connecticut. In response to this experimental effort we have performed detailed calculations for a variety of loss and capture processes. Several low lying states of the NaCa+ cation are used with the accurate potentials energy curves, transition dipole moments and non-adiabatic coupling matrix elements between the states, obtained at the MRCI+Q level of approximation with the MOLPRO suite of quantum chemistry codes. Cross sections and rate coefficients are calculated for radiative charge transfer (RCX), radiative association (RA) and charge exchange in a fully quantum molecular close-coupling (MOCC) approximation at the higher energies. We use a variety of approaches, the optical potential method, semi-classical and MOCC methods to compare and contrast approximations. In addition a kinetic theory recently applied to SiO is utilized which illustrates the dramatic impact resonances have on the radiative association rates. Supported by NASA and HLRS at Stuttgart University.

Silicon Photo-Multiplier Radiation Hardness Tests with a White Neutron Beam

International Nuclear Information System (INIS)

Montanari, A.; Tosi, N.; Pietropaolo, A.; Andreotti, M.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Luppi, E.; Cotta Ramusino, A.; Malaguti, R.; Santoro, V.; Tellarini, G.; Tomassetti, L.; De Donato, C.; Reali, E.

2013-06-01

We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron Linear Accelerator in Belgium on silicon Photo-Multipliers. These are semiconductor photon detectors made of a square matrix of Geiger-Mode Avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to about 6.2 x 10 9 1-MeV-equivalent neutrons per cm 2 . (authors)

Short and long term ionizing radiation effects on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators

International Nuclear Information System (INIS)

Belousov, A; Mustafin, E; Ensinger, W

2012-01-01

Radiation effects on semiconductor devices is a topical issue for high-intensity accelerator projects. In particular it concerns Charge-Coupled Device (CCD) cameras, which are widely used for beam profile monitoring and surveillance in high radiation environment. One should have a clear idea of short and long term radiation effects on such devices. To study these effects, a CCD camera was placed in positions less than half meter away from beam loss point. Primary heavy ion beam of 0.95GeV/n Uranium was dumped into a thick aluminium target creating high fluences of secondary particles (e.g., gammas, neutrons, protons). Effects of these particles on CCD camera were scored with LabView based acquisition software. Monte Carlo calculations with FLUKA code were performed to obtain fluence distributions for different particles and make relevant comparisons. Long term total ionising dose effects are represented by dark current increase, which was scored throughout experiment. Instant radiation effects are represented by creation of charge in CCD cells by ionising particles. Relation of this charge to beam intensity was obtained for different camera positions and fluences within 5 orders of magnitude ranges. With high intensities this charge is so high that it may dramatically influence data obtained from CCD camera used in high radiation environment. The linearity of described above relation confirms linear response of CCD to ionizing radiation. It gives an opportunity to find a new application to CCD cameras as beam loss monitors (BLM).

Development and Studies of Novel Microfabricated Radiation Hard Scintillation Detectors With High Spatial Resolution

CERN Document Server

Mapelli, A; Haguenauer, M; Jiguet, S; Renaud, P; Vico Triviño, N

2011-01-01

A new type of scintillation detector is being developed with standard microfabrication techniques. It consists of a dense array of scintillating waveguides obtained by coupling microfluidic channels filled with a liquid scintillator to photodetectors. Easy manipulation of liquid scintillators inside microfluidic devices allow their flushing, renewal, and exchange making the active medium intrinsically radiation hard. Prototype detectors have been fabricated by photostructuration of a radiation hard epoxy resin (SU-8) deposited on silicon wafers and coupled to a multi-anode photomultiplier tube (MAPMT) to read-out the scintillation light. They have been characterized by exciting the liquid scintillator in the 200 micrometers thick microchannels with electrons from a 90Sr yielding approximately 1 photoelectron per impinging Minimum Ionizing Particle (MIP). These promising results demonstrate the concept of microfluidic scintillating detection and are very encouraging for future developments.

On the variably-charged black holes in general relativity: Hawking's radiation and naked singularities

International Nuclear Information System (INIS)

Ibohal, Ng

2002-01-01

In this paper variably-charged non-rotating Reissner-Nordstrom and rotating Kerr-Newman black holes are discussed. Such a variable charge e with respect to the polar coordinate r in the field equations is referred to as an electrical radiation of the black hole. It is shown that every electrical radiation e(r) of the non-rotating black hole leads to a reduction in its mass M by some quantity. If one considers such electrical radiation taking place continuously for a long time, then a continuous reduction of the mass may take place in the black-hole body and the original mass of the black hole may be evaporated completely. At that stage, the gravity of the object may depend only on the electromagnetic field, not on the mass. Immediately after the complete evaporation of the mass, if the next radiation continues, there may be creation of a new mass leading to the formation of a negative mass naked singularity. It appears that this new mass of the naked singularity would never decrease, but might increase gradually as the radiation continues forever. A similar investigation is also discussed in the case of a variably-charged rotating Kerr-Newman black hole. Thus, it has been shown by incorporating Hawking's evaporation of radiating black holes in the form of spacetime metrics, every electrical radiation of variably-charged rotating and non-rotating black holes may produce a change in the mass of the body without affecting the Maxwell scalar

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Science.gov (United States)

Lauenstein, Jean-Marie

2011-01-01

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

Prototype for a Radiation Hard Upgrade to the ATLAS ZDC

CERN Document Server

Phipps, Michael William; The ATLAS collaboration

2017-01-01

Increases in luminosity and collision energy at the LHC challenge the radiation hardness of detectors located along the beamline. This problem is especially acute for the Zero Degree Calorimeters (ZDCs) in ATLAS, which are exposed to around 10^{10} rad/yr, rendering the current version of the detector inviable during p+p running. To address this shortcoming and allow for important triggers and potential access to low-x physics, we designed a prototype detector that replaces quartz radiator material with a circulating, liquid hydrocarbon. It also features a dual-stage wavelength shifting scheme to transport light to silicon photo-multipliers, as well as both transverse and longitudinal segmentation to study the shower development in two dimensions. Design considerations, results from an SPS beam test and comparisons to GEANT simulation will be presented.

System tests of radiation hard optical links for the ATLAS semiconductor tracker

International Nuclear Information System (INIS)

Charlton, D.G.; Dowell, J.D.; Homer, R.J.; Jovanovic, P.; Kenyon, I.R.; Mahout, G.; Shaylor, H.R.; Wilson, J.A.; Rudge, A.; Fopma, J.; Mandic, I.; Nickerson, R.B.; Shield, P.; Wastie, R.; Weidberg, A.R.; Eek, L.-O.; Go, A.; Lund-Jensen, B.; Pearce, M.; Soederqvist, J.; Morrissey, M.; White, D.J.

2000-01-01

A prototype optical data and Timing, Trigger and Control transmission system based on LEDs and PIN-diodes has been constructed. The system would be suitable in terms of radiation hardness and radiation length for use in the ATLAS SemiConductor Tracker. Bit error rate measurements were performed for the data links and for the links distributing the Timing, Trigger and Control data from the counting room to the front-end modules. The effects of cross-talk between the emitters and receivers were investigated. The advantages of using Vertical Cavity Surface Emitting Lasers (VCSELs) instead of LEDs are discussed

Uncooled Radiation Hard SiC Schottky VUV Detectors Capable of Single Photon Sensing, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize very large area, uncooled and radiative hard 4H-SiC VUV detectors capable of near single...

Coherent electromagnetic radiation of a modulated beam of charged particles

Energy Technology Data Exchange (ETDEWEB)

Pankratov, S G [The State Committee of Standards of the USSR, Moscow, USSR

1977-12-27

The intensity of electromagnetic radiation produced by a modulated beam of charged particles is estimated. The coherence effect is due to the modulation, i.e. to periodicity in the particles distribution.

Spectroscopy with trapped highly charged ions

International Nuclear Information System (INIS)

Beiersdorfer, Peter

2009-01-01

We give an overview of atomic spectroscopy performed on electron beam ion traps at various locations throughout the world. Spectroscopy at these facilities contributes to various areas of science and engineering, including but not limited to basic atomic physics, astrophysics, extreme ultraviolet lithography, and the development of density and temperature diagnostics of fusion plasmas. These contributions are accomplished by generating, for example, spectral surveys, making precise radiative lifetime measurements, accounting for radiative power emitted in a given wavelength band, illucidating isotopic effects, and testing collisional-radiative models. While spectroscopy with electron beam ion traps had originally focused on the x-ray emission from highly charged ions interacting with the electron beam, the operating modes of such devices have expanded to study radiation in almost all wavelength bands from the visible to the hard x-ray region; and at several facilities the ions can be studied even in the absence of an electron beam. Photon emission after charge exchange or laser excitation has been observed; and the work is no longer restricted to highly charged ions. Much of the experimental capabilities are unique to electron beam ion traps, and the work performed with these devices cannot be undertaken elsewhere. However, in other areas the work on electron beam ion traps rivals the spectroscopy performed with conventional ion traps or heavy-ion storage rings. The examples we present highlight many of the capabilities of the existing electron beam ion traps and their contributions to physics.

Correlation between Co-60 and X-ray exposures on radiation-induced charge buildup in silicon-on-insulator buried oxides

International Nuclear Information System (INIS)

Schwank, James R.; Shaneyfelt, Marty R.; Loemker, Rhonda Ann; Draper, Bruce L.; Dodd, Paul E.; Witczak, StevenN C.; Riewe, Leonard Charles; Ferlet-Cavrois, V.; Paillet, P.; Leray, J.-L.; Fleetwood, D.M.

2000-01-01

Large differences in charge buildup in SOI buried oxides can result between x-ray and Co-60 irradiations. The effects of bias configuration and substrate type on charge buildup and hardness assurance issues are explored

Radiation hard silicon sensors for the CMS tracker upgrade

CERN Document Server

Pohlsen, Thomas

2013-01-01

At an instantaneous luminosity of $5 \\times 10^{34}$ cm$^{-2}$ s$^{-1}$, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of $3\\,000$ fb$^{-1}$ of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfils all requirements for detectors for the HL-LHC. Focussing on the upgrade of the outer tracker region, pad sensors as well as fully functional strip sensors have been implemented on silicon wafers with different material properties and thicknesses. The samples were irradiated with a mixture of neutrons and protons corresponding to fluences as expected for the positions of detector layers in the future tracker. Different proton energies were used for irr...

Origin of interface states and oxide charges generated by ionizing radiation

International Nuclear Information System (INIS)

Sah, C.T.

1976-01-01

The randomly located trivalent silicon atoms are shown to account for the thermally generated interface states at the SiO 2 -Si interface. The interface state density is greatly reduced in water containing ambients at low temperatures (450 0 C) by forming trivalent silicon hydroxide bonds. Interface states are regenerated when the /triple bond/Si-OH bonds are broken by ionizing radiation and the OH ions are drifted away. In the bulk of the oxide film, the trivalent silicon and the interstitial oxygen donor centers are shown to be responsible for the heat and radiation generated positive space charge build-up (oxide charge) in thermally grown silicon oxide

Review of the development of diamond radiation sensors

CERN Document Server

Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 mu m have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9*10/sup 15/ pi cm/sup -2/, 5*10/sup 19/ p cm/sup -2/ and 1.35*10/sup 15/ n cm/sup -2 /, respectively. Diamond micro-strip detectors with 50 mu m pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2*4 cm/sup 2/ surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out ch...

Radiation by moving charges

International Nuclear Information System (INIS)

Geloni, Gianluca; Kocharyan, Vitali; Saldin, Evgeni

2017-04-01

It is generally accepted that in order to describe the dynamics of relativistic particles in the laboratory (lab) frame it is sufficient to take into account the relativistic dependence of the particle momenta on the velocity. This solution of the dynamics problem in the lab frame makes no reference to Lorentz transformations. For this reason they are not discussed in particle tracking calculations in accelerator and plasma physics. It is generally believed that the electrodynamics problem can be treated within the same ''single inertial frame'' description without reference to Lorentz transformations. In particular, in order to evaluate radiation fields arising from charged particles in motion we need to know their velocities and positions as a function of the lab frame time t. The relativistic motion of a particle in the lab frame is described by Newton's second law ''corrected'' for the relativistic dependence of momentum on velocity. It is assumed in all standard derivations that one can perform identification of the trajectories in the source part of the usual Maxwell's equations with the trajectories vector x(t) measured (or calculated by using the corrected Newton's second law) in the lab frame. This way of coupling fields and particles is considered since more than a century as the relativistically correct procedure.We argue that this procedure needs to be changed, and we demonstrate the following, completely counterintuitive statement: the results of conventional theory of radiation by relativistically moving charges are not consistent with the principle of relativity. In order to find the trajectory of a particle in the lab frame consistent with the usual Maxwell's equations, one needs to solve the dynamic equation inmanifestly covariant form by using the coordinate-independent proper time τ to parameterize the particle world-line in space-time. We show that there is a difference between ''true'' particle trajectory vector x(t) calculated or measured in

The influence of parotid gland sparing on radiation damages of dental hard tissues.

Science.gov (United States)

Hey, Jeremias; Seidel, Johannes; Schweyen, Ramona; Paelecke-Habermann, Yvonne; Vordermark, Dirk; Gernhardt, Christian; Kuhnt, Thomas

2013-07-01

The aim of the present study was to evaluate whether radiation damage on dental hard tissue depends on the mean irradiation dose the spared parotid gland is subjected to or on stimulated whole salivary flow rate. Between June 2002 and October 2008, 70 patients with neck and cancer curatively irradiated were included in this study. All patients underwent dental treatment referring to the guidelines and recommendations of the German Society of Dental, Oral and Craniomandibular Sciences prior, during, and after radiotherapy (RT). During the follow-up period of 24 months, damages on dental hard tissues were classified according to the RTOG/EORTC guidelines. The mean doses (D(mean)) during spared parotid gland RT were determined. Stimulated whole saliva secretion flow rates (SFR) were measured before RT and 1, 6, 12, 24 months after RT. Thirty patients showed no carious lesions (group A), 18 patients developed sporadic carious lesions (group B), and 22 patients developed general carious lesions (group C). Group A patients received a D mean of 21.2 ± 11.04 Gy. Group B patients received a D(mean) of 26.5 ± 11.59 Gy and group C patients received a D(mean) of 33.9 ± 9.93 Gy, respectively. The D(mean) of group A was significantly lower than the D(mean) of group C (p dental hard tissue correlates with increased mean irradiation doses as well as decreased salivary flow rates. Parotid gland sparing resulting in a dose below 20 Gy reduces radiation damage on dental hard tissues, and therefore, the dose may act as a predictor for the damage to be expected.

Hardness variability in commercial technologies

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Winokur, P.S.; Meisenheimer, T.L.; Sexton, F.W.; Roeske, S.B.; Knoll, M.G.

1994-01-01

The radiation hardness of commercial Floating Gate 256K E 2 PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in E 2 PROM hardness were found to depend on bias condition and failure mode (i.e., inability to read or write the memory), as well as the foundry at which the part was manufactured. This variability is related to system requirements, and it is shown that hardness level and variability affect the allowable mode of operation for E 2 PROMs in space applications. The radiation hardness of commercial 1-Mbit CMOS SRAMs from Micron, Hitachi, and Sony irradiated at 147 rad(Si)/s was approximately 12, 13, and 19 krad(Si), respectively. These failure levels appear to be related to increases in leakage current during irradiation. Hardness of SRAMs from each manufacturer varied by less than 20%, but differences between manufacturers are significant. The Qualified Manufacturer's List approach to radiation hardness assurance is suggested as a way to reduce variability and to improve the hardness level of commercial technologies

Towards radiation hard converter material for SiC-based fast neutron detectors

Science.gov (United States)

Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

2018-05-01

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection

Charge transport properties of CdMnTe radiation detectors

Directory of Open Access Journals (Sweden)

Prokopovich D. A.

2012-10-01

Full Text Available Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading charge collection is reduced with increasing values of bias voltage. The electron drift velocity was calculated from the rise time distribution of the preamplifier output pulses at each measured bias. From the dependence of drift velocity on applied electric field the electron mobility was found to be μn = (718 ± 55 cm2/Vs at room temperature.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

Science.gov (United States)

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter

International Nuclear Information System (INIS)

Qiang, Yi; Zorn, Carl; Barbosa, Fernando; Smith, Elton

2013-01-01

We report on the measurement of the neutron radiation hardness of silicon photomultipliers (SiPMs) manufactured by Hamamatsu Corporation in Japan and SensL in Ireland. Samples from both companies were irradiated by neutrons created by a 1 GeV electron beam hitting a thin lead target at Jefferson Lab Hall A. More tests regarding the temperature dependence of the neutron radiation damage and self-annealing were performed on Hamamatsu SiPMs using a calibrated Am–Be neutron source from the Jefferson Lab Radiation Control group. As the result of irradiation both dark current and dark rate increase linearly as a function of the 1 MeV equivalent neutron fluence and a temperature dependent self-annealing effect is observed.

Radiation hardness of WLS fibres for the ATLAS Tile Calorimeter

CERN Document Server

David, M; Maio, A

2007-01-01

In this document we present the data obtained in the irradiation in a Co-60 source of WLS fibers for the TileCal calorimeter. The optical, mechanical and radiation hardness properties of these fibers were developed in close contact with three producers: Bicron, Kuraray and Pol.Hi.Tech. The results on the degradation of the light output and attenuation length from five irradiations are presented. The fibers were irradiated with a total dose at least 3 times higher than the dose predicted for 10 years of operation of LHC at nominal luminosity.

Registration of intensive hard X-rays and soft gamma-rays from the thunderstorm clouds at Tien-Shan installation Adron

International Nuclear Information System (INIS)

Antonova, V.P.; Kryukov, S.V.; Vil'danova, L.I.; Gurevich, A.V.; Zybin, K.P.; Kokobaev, M.M.; Nesterova, N.M.; Piskal', V.V.; Ptitsyn, M.O.; Chubenko, A.P.; Shchepetov, A.L.

2001-01-01

The Adron installation mounted at the Tien-Shan station is intended for studying the extensive air showers. The Adron installation consists of a neutron supermonitor charged particles detector, muon detector and detector for registering the hard X-ray and soft gamma-radiation from the thunderstorm clouds accomplished on the basis of the Geiger-Mueller counters with sensitivity area of 16-17 m 2 . The intensive fluxes of the hard X-ray and soft gamma-radiation from the thunderstorm clouds passing over the Adron installation at the height below 1 km are registered using this installation. The short-time radiation flares of 1-5 min duration are separated at the background of the intensity slow change. This testifies to the benefit of existence of the runaway electron effect in the thunderstorm clouds [ru

Thermodynamics and Hawking radiation of five-dimensional rotating charged Goedel black holes

International Nuclear Information System (INIS)

Wu Shuangqing; Peng Junjin

2011-01-01

We study the thermodynamics of Goedel-type rotating charged black holes in five-dimensional minimal supergravity. These black holes exhibit some peculiar features such as the presence of closed timelike curves and the absence of a globally spatial-like Cauchy surface. We explicitly compute their energies, angular momenta, and electric charges that are consistent with the first law of thermodynamics. Besides, we extend the covariant anomaly cancellation method, as well as the approach of the effective action, to derive their Hawking fluxes. Both the methods of the anomaly cancellation and the effective action give the same Hawking fluxes as those from the Planck distribution for blackbody radiation in the background of the charged rotating Goedel black holes. Our results further support that Hawking radiation is a quantum phenomenon arising at the event horizon.

Charge-coupled devices as positron sensitive detectors of x-radiation

International Nuclear Information System (INIS)

Volkov, G.S.; Zazhivikhin, V.V.; Zajtsev, V.I.; Mishevskij, V.O.

1996-01-01

Results of theoretical and experimental studies on the sensitivity and spatial resolution of devices with a charge link (CLD) within the X-radiation energy range are described. The areas of the device application are considered

Radiation doping methods of semiconductor materials: the nuclear doping by charged particles

International Nuclear Information System (INIS)

Kozlovskii, V.V.; Zakharenkov, L.F.

1996-01-01

A review is given of the state of the art in one of the current topics in radiation doping of semiconductors, which is process of nuclear transmutation doping (NTD) by charged particles. In contrast to the neutron and photonuclear transmutation doping, which have been dealt with in monograths and reviews, NTD caused by the action of charged particles is a subject growing very rapidly in the last 10-15 years, but still lacking systematic accounts. The review consists of three sections. The first section deals with the characteristics of nuclear reactions in semiconductors caused by the action of charged particles: the main stress is on the modeling of NTD processes in semiconductors under the action of charged particles. In the second section the state of the art of experimental investigations of NTD under the influence of charged particles is considered. An analysis is made of the communications reporting experimental data on the total numbers of dopants which are introduced, concentration of the electrically active fraction of the impurity, profiles of the dopant distributions, and conditions for efficient annealing of radiation defects. The third section deals with the suitability of NTD by charged particles for the fabrication of semiconductor devices. (author)

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

Energy Technology Data Exchange (ETDEWEB)

Wei, Qingyu

2008-10-17

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Studies of radiation hardness of MOS devices for application in a linear collider vertex detector

International Nuclear Information System (INIS)

Wei, Qingyu

2008-01-01

The proposed International Linear Collider (ILC) together with the Large Hadron Collider (LHC) at CERN serve as a combined tool to explore the mysteries of the universe: the former is a precision machine and the latter can be considered as a finding machine. The key component of the ILC is the vertex detector that should be placed as close as possible to the Interaction Point (IP) and has better radiation tolerance against the dominant electron-positron pair production background from beam-beam interactions. A new generation of MOS-type Depleted-Field-Effect Transistor (MOSDEPFET) active pixel detectors has been proposed and developed by Semiconductor Labor Munich for Physics and for extraterrestrial Physics in order to meet the requirements of the vertex detector at the ILC. Since all MOS devices are susceptible to ionizing radiation, the main topic is focused on the radiation hardness of detectors, by which a series of physical processes are analyzed: e.g. surface damage due to ionizing radiation as well as damage mechanisms and their associated radiation effects. As a consequence, the main part of this thesis consists of a large number of irradiation experiments and the corresponding discussions. Finally, radiation hardness of the detectors should be improved through a set of concluded experiences that are based on a series of analysis of the characteristic parameters using different measurement techniques. The feasibility of the MOSDEPFET-based vertex detector is, therefore, predicted at ILC. (orig.)

Hard X-ray polarimetry with position sensitve germanium detectors. Studies of the recombination transitions into highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Tashenov, Stanislav

2005-07-01

In this work a first study of the photon polarization for the process of radiative recombination has been performed. This was done at the ESR storage ring at GSI for uranium ions colliding with N2 at various collision energies. For this measurement a high purity Ge Pixel Detector with a 4 x 4 segmentation matrix was applied. The investigation was performed at the Gas-jet target of the ESR. The detector was placed at 60 and 90 observation angles. The sensitivity of the Compton scattering effect to the linear polarization of the X-Ray radiation was employed for the polarization measurement. Detailed investigations of the scattering and geometrical effects inside the detector were performed in order to develop a method to interpret the experimental data and extract the degree of the linear polarization in the hard X-Ray regime with a high precision. A special emphasis was given to the geometry of the detector and it's influence on the measured pixel-to-pixel Compton scattering intensities. The developed method enabled to achieve a precision of the order of 10% with the Pixel Detector which is dominated by the statistical uncertainties. The obtained results show a good agreement with the theoretical values derived from the exact relativistic calculations. For the case of the linear polarization of the K-REC photons, the measured data con rm the theoretical prediction that strong depolarization effects occur for high projectile charges in the forward hemisphere. The latter is in disagreement with the nonrelativistic theory which predicts a 100 % polarization regardless of the emission angle. (orig.)

Hard X-ray polarimetry with position sensitve germanium detectors. Studies of the recombination transitions into highly charged ions

International Nuclear Information System (INIS)

Tashenov, Stanislav

2005-01-01

In this work a first study of the photon polarization for the process of radiative recombination has been performed. This was done at the ESR storage ring at GSI for uranium ions colliding with N2 at various collision energies. For this measurement a high purity Ge Pixel Detector with a 4 x 4 segmentation matrix was applied. The investigation was performed at the Gas-jet target of the ESR. The detector was placed at 60 and 90 observation angles. The sensitivity of the Compton scattering effect to the linear polarization of the X-Ray radiation was employed for the polarization measurement. Detailed investigations of the scattering and geometrical effects inside the detector were performed in order to develop a method to interpret the experimental data and extract the degree of the linear polarization in the hard X-Ray regime with a high precision. A special emphasis was given to the geometry of the detector and it's influence on the measured pixel-to-pixel Compton scattering intensities. The developed method enabled to achieve a precision of the order of 10% with the Pixel Detector which is dominated by the statistical uncertainties. The obtained results show a good agreement with the theoretical values derived from the exact relativistic calculations. For the case of the linear polarization of the K-REC photons, the measured data con rm the theoretical prediction that strong depolarization effects occur for high projectile charges in the forward hemisphere. The latter is in disagreement with the nonrelativistic theory which predicts a 100 % polarization regardless of the emission angle. (orig.)

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures

CERN Document Server

MacEvoy, B; Hall, G; Moscatelli, F; Passeri, D; Santocchia, A

2002-01-01

Silicon particle detectors in the next generation of experiments at the CERN Large Hadron Collider will be exposed to a very challenging radiation environment. The principal obstacle to long-term operation arises from changes in detector doping concentration (N/sub eff/), which lead to an increase in the bias required to deplete the detector and hence achieve efficient charge collection. We have previously presented a model of interdefect charge exchange between closely spaced centers in the dense terminal clusters formed by hadron irradiation. This manifestly non-Shockley-Read-Hall (SRH) mechanism leads to a marked increase in carrier generation rate and negative space charge over the SRH prediction. There is currently much interest in the subject of cryogenic detector operation as a means of improving radiation hardness. Our motivation, however, is primarily to investigate our model further by testing its predictions over a range of temperatures. We present measurements of spectra from /sup 241/Am alpha par...

Role of charged particle irradiations in the study of radiation damage correlation

International Nuclear Information System (INIS)

Ishino, S.; Sekimura, N.

1990-01-01

Charged particle irradiations were originally expected to provide means to simulate the effect of neutron irradiations. However, it has been recognized that quantitative and sometimes even qualitative simulation of neutron radiation damage is difficult and the role of the charged particle irradiations has shifted to establishing fission-fusion correlation based on fundamental understanding of the radiation damage phenomena. The authors have been studying radiation effects in fusion materials using energetic ions from the latter standpoint. In this paper, the authors review recent results using a heavy-ion/electron microscope link facility together with sets of small heavy ion and light ion accelerators on cascade damage produced by energetic primary recoils and on the effect of helium on microstructural and microchemical evolution. Some of the other applications of the ion accelerators will also be mentioned. (orig.)

Charge transport properties of CdMnTe radiation detectors

Energy Technology Data Exchange (ETDEWEB)

Kim K.; Rafiel, R.; Boardman, M.; Reinhard, I.; Sarbutt, A.; Watt, G.; Watt, C.; Uxa, S.; Prokopovich, D.A.; Belas, E.; Bolotnikov, A.E.; James, R.B.

2012-04-11

Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

DNA Damage by Ionizing Radiation: Tandem Double Lesions by Charged Particles

Science.gov (United States)

Huo, Winifred M.; Chaban, Galina M.; Wang, Dunyou; Dateo, Christopher E.

2005-01-01

Oxidative damages by ionizing radiation are the source of radiation-induced carcinogenesis, damage to the central nervous system, lowering of the immune response, as well as other radiation-induced damages to human health. Monte Carlo track simulations and kinetic modeling of radiation damages to the DNA employ available molecular and cellular data to simulate the biological effect of high and low LET radiation io the DNA. While the simulations predict single and double strand breaks and base damages, so far all complex lesions are the result of stochastic coincidence from independent processes. Tandem double lesions have not yet been taken into account. Unlike the standard double lesions that are produced by two separate attacks by charged particles or radicals, tandem double lesions are produced by one single attack. The standard double lesions dominate at the high dosage regime. On the other hand, tandem double lesions do not depend on stochastic coincidences and become important at the low dosage regime of particular interest to NASA. Tandem double lesions by hydroxyl radical attack of guanine in isolated DNA have been reported at a dosage of radiation as low as 10 Gy. The formation of two tandem base lesions was found to be linear with the applied doses, a characteristic of tandem lesions. However, tandem double lesions from attack by a charged particle have not been reported.

The HZE radiation problem. [highly-charged energetic galactic cosmic rays

Science.gov (United States)

Schimmerling, Walter

1990-01-01

Radiation-exposure limits have yet to be established for missions envisioned in the framework of the Space Exploration Initiative. The radiation threat outside the earth's magnetosphere encompasses protons from solar particle events and the highly charged energetic particles constituting galactic cosmic rays; radiation biology entails careful consideration of the extremely nonuniform patterns of such particles' energy deposition. The ability to project such biological consequences of exposure to energetic particles as carcinogenicity currently involves great uncertainties from: (1) different regions of space; (2) the effects of spacecraft structures; and (3) the dose-effect relationships of single traversals of energetic particles.

Radiation by moving charges

Energy Technology Data Exchange (ETDEWEB)

Geloni, Gianluca [European XFEL GmbH, Hamburg (Germany); Kocharyan, Vitali; Saldin, Evgeni [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

2017-04-15

It is generally accepted that in order to describe the dynamics of relativistic particles in the laboratory (lab) frame it is sufficient to take into account the relativistic dependence of the particle momenta on the velocity. This solution of the dynamics problem in the lab frame makes no reference to Lorentz transformations. For this reason they are not discussed in particle tracking calculations in accelerator and plasma physics. It is generally believed that the electrodynamics problem can be treated within the same ''single inertial frame'' description without reference to Lorentz transformations. In particular, in order to evaluate radiation fields arising from charged particles in motion we need to know their velocities and positions as a function of the lab frame time t. The relativistic motion of a particle in the lab frame is described by Newton's second law ''corrected'' for the relativistic dependence of momentum on velocity. It is assumed in all standard derivations that one can perform identification of the trajectories in the source part of the usual Maxwell's equations with the trajectories vector x(t) measured (or calculated by using the corrected Newton's second law) in the lab frame. This way of coupling fields and particles is considered since more than a century as the relativistically correct procedure.We argue that this procedure needs to be changed, and we demonstrate the following, completely counterintuitive statement: the results of conventional theory of radiation by relativistically moving charges are not consistent with the principle of relativity. In order to find the trajectory of a particle in the lab frame consistent with the usual Maxwell's equations, one needs to solve the dynamic equation inmanifestly covariant form by using the coordinate-independent proper time τ to parameterize the particle world-line in space-time. We show that there is a difference between &apos

Influence of variable tungsten valency on optical transmittance and radiation hardness of lead tungstate (PWO) scintillation crystals

CERN Document Server

Burachas, S; Makov, I; Saveliev, Yu; Ippolitov, M S; Man'ko, V; Nikulin, S P; Nyanin, A; Vasilev, A; Apanasenko, A; Tamulaitis, G

2003-01-01

A new approach to interpret the radiation hardness of PbWO//4 (PWO) scintillators is developed by revealing importance of the inclusions of tungsten oxides WO//3//-//x with variable valency. It is demonstrated that the influence of the ionizing radiation on PWO is, in many aspects, similar to the effect of the high-temperature annealing in oxygenless ambient. In both cases, a valency change of the tungsten oxides is initiated and results in induced absorption and, consequently, in crystal coloration. In the PWO crystals doped with L//2O//3 (L = Y, La, Gd), the radiation hardness and the optical properties are mainly affected by inclusions of W//1//-//yL//yO//3//- //x (0 less than x less than 0.3) instead of inclusions of WO//3//- //x prevailing in the undoped samples. It is demonstrated that the radiation-induced bleaching and the photochromic effect of PWO are caused by phase transitions in the inclusions of tungsten oxide. Thermodynamic conditions for the phase transitions are discussed and the optimal oxid...

Ion beam induced charge and cathodoluminescence imaging of response uniformity of CVD diamond radiation detectors

CERN Document Server

Sellin, P J; Galbiati, A; Maghrabi, M; Townsend, P D

2002-01-01

The uniformity of response of CVD diamond radiation detectors produced from high quality diamond film, with crystallite dimensions of >100 mu m, has been studied using ion beam induced charge imaging. A micron-resolution scanning alpha particle beam was used to produce maps of pulse height response across the device. The detectors were fabricated with a single-sided coplanar electrode geometry to maximise their sensitivity to the surface region of the diamond film where the diamond crystallites are highly ordered. High resolution ion beam induced charge images of single crystallites were acquired that demonstrate variations in intra-crystallite charge transport and the termination of charge transport at the crystallite boundaries. Cathodoluminescence imaging of the same crystallites shows an inverse correlation between the density of radiative centres and regions of good charge transport.

Test of radiation hardness of pcCVD detectors

Energy Technology Data Exchange (ETDEWEB)

Schlemme, Steffen [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Technische Universitaet Darmstadt (Germany); Enders, Joachim [Technische Universitaet Darmstadt (Germany); Figuera, P.; Salamone, S. [LNS-INFN Catania (Italy); Fruehauf, J.; Kis, Mladen; Kratz, A.; Kurz, N.; Loechner, S.; Nociforo, Chiara; Schirru, Fabio; Szczepanczyk, B.; Traeger, M.; Visinka, R. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Musumarra, A. [LNS-INFN Catania (Italy); University of Catania (Italy)

2016-07-01

The new in-flight separator Super-FRS is under construction at the Facility for Antiproton and Ion Research (FAIR, Darmstadt). Ion rates up to 3 x 10{sup 11} {sup 238}U/spill demand an adaption of detectors to a high radiation environment. A test experiment to investigate the radiation hardness of polycrystalline diamond detectors (pcCVD) was performed at the LNS-INFN in Catania using a {sup 12}C beam at 62 MeV/u and intensities of up to 1.5 pnA. The setup consisted of pcCVD strip detectors to measure the beam profile, a single crystal diamond detector to calibrate the ionisation chamber working in current mode as a beam intensity monitor and a pcCVD sample to be irradiated. The IC used was designed for FAIR and showed a stable counting rate allowing us to calibrate and perform beam intensity measurements with it. The total measured counts on the sample were 8.25 x 10{sup 11} counts/mm{sup 2} over a period of 60 hours. Digital waveforms of the pcCVD signals were taken with an oscilloscope and analysed. The results showed no change of the pcCVD signal properties during the entire irradiation.

Systems for detecting and recording hard corpuscular and electromagnetic radiations using a superconducting element

International Nuclear Information System (INIS)

Drukier, A.K.; Valette, Claude; Waysand, Georges.

1975-01-01

The invention relates to systems for detecting hard X ray or gamma radiations above 5 keV in energy, intended, for example, for gammagraphy by emission in the biological, anatomic and medical fields. It describes systems of the above type which directly give the image of a radiation distribution, that is to say without intermediate processing. Another purpose of the invention is to provide the devices with main memory measuring the radiation distribution, in other words systems that display the said data for as long as the operator deems necessary and that can be reset, that is to say returned to measuring conditions, immediately. The invention makes use of the properties of type I superconductors [fr

Scattering of Non-Relativistic Charged Particles by Electromagnetic Radiation

Science.gov (United States)

Apostol, M.

2017-11-01

The cross-section is computed for non-relativistic charged particles (like electrons and ions) scattered by electromagnetic radiation confined to a finite region (like the focal region of optical laser beams). The cross-section exhibits maxima at scattering angles given by the energy and momentum conservation in multi-photon absorption or emission processes. For convenience, a potential scattering is included and a comparison is made with the well-known Kroll-Watson scattering formula. The scattering process addressed in this paper is distinct from the process dealt with in previous studies, where the scattering is immersed in the radiation field.

RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders

CERN Document Server

Balbuena, Juan Pablo; Campabadal, Francesca; Díez, Sergio; Fleta, Celeste; Lozano, Manuel; Pellegrini, Giulio; Rafí, Joan Marc; Ullán, Miguel; Creanza, Donato; De Palma, Mauro; Fedele, Francesca; Manna, Norman; Kierstead, Jim; Li, Zheng; Buda, Manuela; Lazanu, Sorina; Pintilie, Lucian; Pintilie, Ioana; Popa, Andreia-Ioana; Lazanu, Ionel; Collins, Paula; Fahrer, Manuel; Glaser, Maurice; Joram, Christian; Kaska, Katharina; La Rosa, Alessandro; Mekki, Julien; Moll, Michael; Pacifico, Nicola; Pernegger, Heinz; Goessling, Claus; Klingenberg, Reiner; Weber, Jens; Wunstorf, Renate; Roeder, Ralf; Stolze, Dieter; Uebersee, Hartmut; Cihangir, Selcuk; Kwan, Simon; Spiegel, Leonard; Tan, Ping; Bruzzi, Mara; Focardi, Ettore; Menichelli, David; Scaringella, Monica; Breindl, Michael; Eckert, Simon; Köhler, Michael; Kuehn, Susanne; Parzefall, Ulrich; Wiik, Liv; Bates, Richard; Blue, Andrew; Buttar, Craig; Doherty, Freddie; Eklund, Lars; Bates, Alison G; Haddad, Lina; Houston, Sarah; James, Grant; Mathieson, Keith; Melone, J; OShea, Val; Parkes, Chris; Pennicard, David; Buhmann, Peter; Eckstein, Doris; Fretwurst, Eckhart; Hönniger, Frank; Khomenkov, Vladimir; Klanner, Robert; Lindström, Gunnar; Pein, Uwe; Srivastava, Ajay; Härkönen, Jaakko; Lassila-Perini, Katri; Luukka, Panja; Mäenpää, Teppo; Tuominen, Eija; Tuovinen, Esa; Eremin, Vladimir; Ilyashenko, Igor; Ivanov, Alexandr; Kalinina, Evgenia; Lebedev, Alexander; Strokan, Nikita; Verbitskaya, Elena; Barcz, Adam; Brzozowski, Andrzej; Kaminski, Pawel; Kozlowski, Roman; Kozubal, Michal; Luczynski, Zygmunt; Pawlowski, Marius; Surma, Barbara; Zelazko, Jaroslaw; de Boer, Wim; Dierlamm, Alexander; Frey, Martin; Hartmann, Frank; Zhukov, Valery; Barabash, L; Dolgolenko, A; Groza, A; Karpenko, A; Khivrich, V; Lastovetsky, V; Litovchenko, P; Polivtsev, L; Campbell, Duncan; Chilingarov, Alexandre; Fox, Harald; Hughes, Gareth; Jones, Brian Keith; Sloan, Terence; Samadashvili, Nino; Tuuva, Tuure; Affolder, Anthony; Allport, Phillip; Bowcock, Themis; Casse, Gianluigi; Vossebeld, Joost; Cindro, Vladimir; Dolenc, Irena; Kramberger, Gregor; Mandic, Igor; Mikuž, Marko; Zavrtanik, Marko; Zontar, Dejan; Gil, Eduardo Cortina; Grégoire, Ghislain; Lemaitre, Vincent; Militaru, Otilia; Piotrzkowski, Krzysztof; Kazuchits, Nikolai; Makarenko, Leonid; Charron, Sébastien; Genest, Marie-Helene; Houdayer, Alain; Lebel, Celine; Leroy, Claude; Aleev, Andrey; Golubev, Alexander; Grigoriev, Eugene; Karpov, Aleksey; Martemianov, Alxander; Rogozhkin, Sergey; Zaluzhny, Alexandre; Andricek, Ladislav; Beimforde, Michael; Macchiolo, Anna; Moser, Hans-Günther; Nisius, Richard; Richter, Rainer; Gorelov, Igor; Hoeferkamp, Martin; Metcalfe, Jessica; Seidel, Sally; Toms, Konstantin; Hartjes, Fred; Koffeman, Els; van der Graaf, Harry; Visschers, Jan; Kuznetsov, Andrej; Sundnes Løvlie, Lars; Monakhov, Edouard; Svensson, Bengt G; Bisello, Dario; Candelori, Andrea; Litovchenko, Alexei; Pantano, Devis; Rando, Riccardo; Bilei, Gian Mario; Passeri, Daniele; Petasecca, Marco; Pignatel, Giorgio Umberto; Bernardini, Jacopo; Borrello, Laura; Dutta, Suchandra; Fiori, Francesco; Messineo, Alberto; Bohm, Jan; Mikestikova, Marcela; Popule, Jiri; Sicho, Petr; Tomasek, Michal; Vrba, Vaclav; Broz, Jan; Dolezal, Zdenek; Kodys, Peter; Tsvetkov, Alexej; Wilhelm, Ivan; Chren, Dominik; Horazdovsky, Tomas; Kohout, Zdenek; Pospisil, Stanislav; Solar, Michael; Sopko, Vít; Sopko, Bruno; Uher, Josef; Horisberger, Roland; Radicci, Valeria; Rohe, Tilman; Bolla, Gino; Bortoletto, Daniela; Giolo, Kim; Miyamoto, Jun; Rott, Carsten; Roy, Amitava; Shipsey, Ian; Son, SeungHee; Demina, Regina; Korjenevski, Sergey; Grillo, Alexander; Sadrozinski, Hartmut; Schumm, Bruce; Seiden, Abraham; Spence, Ned; Hansen, Thor-Erik; Artuso, Marina; Borgia, Alessandra; Lefeuvre, Gwenaelle; Guskov, J; Marunko, Sergey; Ruzin, Arie; Tylchin, Tamir; Boscardin, Maurizio; Dalla Betta, Gian - Franco; Gregori, Paolo; Piemonte, Claudio; Ronchin, Sabina; Zen, Mario; Zorzi, Nicola; Garcia, Carmen; Lacasta, Carlos; Marco, Ricardo; Marti i Garcia, Salvador; Minano, Mercedes; Soldevila-Serrano, Urmila; Gaubas, Eugenijus; Kadys, Arunas; Kazukauskas, Vaidotas; Sakalauskas, Stanislavas; Storasta, Jurgis; Vidmantis Vaitkus, Juozas; CERN. Geneva. The LHC experiments Committee; LHCC

2010-01-01

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration.

Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

International Nuclear Information System (INIS)

Shah, K.S.; Lund, J.C.; Olschner, F.

1990-01-01

The development of improved semiconductor radiation detectors would be facilitated by a quantitative model that predicts the performance of these detectors as a function of material characteristics and device operating parameters. An accurate prediction of the pulse height spectrum from a radiation detector can be made if both the noise and the charge collection properties of the detector are understood. The noise characteristics of semiconductor radiation detectors have been extensively studied. The effect of noise can be closely simulated by convoluting the noise-free pulse height spectrum with a Gaussian function. Distortion of semiconductor detector's pulse height spectrum from charge collection effects is more complex than the effects of noise and is more difficult to predict. To compute these distortions it is necessary to know how the charge collection efficiency η varies as a function of position within the detector x. These effects are shown. This problem has been previously solved for planar detectors with a constant electric field, for the case of spherical detectors, and for coaxial detectors. In this paper the authors describe a more general solution to the charge collection problem which includes the case of a non-constant electric field in a planar geometry

Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

International Nuclear Information System (INIS)

Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

1991-11-01

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

Effect of seeds of heavy charged particles of galactic cosmic radiation

International Nuclear Information System (INIS)

Maksimova, Y.N.

1985-01-01

The experiments were carried out on Lactuca sativa seeds exposed for 20, 66, 123 and 308 days in a biostack also containing physical detectors of heavy charged particles. The yield of aberrant cells and its dependence on the exposure time and the site where particles hit the object were measured. The cytogenetic examination demonstrated a significant difference between the seeds that were or were not hit by heavy charged particles. A significant contribution of galactic cosmic radiation to the radiobiological effect is indicated. The yield of aberrant cells as a function of the localization of heavy charged particles in the seed is established. The most sensitive target is the root meristem

Influence of initial microstructure of aluminium alloy charge after its melting on the hard metal inherited structure

Directory of Open Access Journals (Sweden)

Г. О. Іванов

2016-07-01

Full Text Available Metal properties heredity in the chain- initial hard state > liquid state > final solidified state has always been interesting for metallurgists. It is known that after the primary melting of charge there occurs microheterogenеous non-equilibrium melt with crystal-like groups of atoms and disordered area in it. With increase in temperature the melt approaches the equilibrium microhomogeneous state. The aim of this work is to study the charge microstructure influence on melt fluidity in the light of quasi-crystal model of liquid structure. Influence of isothermal heating on fluidity of aluminium melt, smelted from fine-grained and coarse-grained charge has been investigated. It has been stated that for coarse-grained metal additional melting of crystallization «genes» takes place in 1,4-quick time, as compared to fine-grained. The coefficients of exponential function for our experimental data have been calculated. It has been stated that the exponent depends on the charge microstructure, and multiplier depends on the soaking temperature. On the basis of A. Einstein equation for the calculation of liquid viscosity from the known fraction of admixtures and clean liquid viscosity an analogical equation for fluidity and calculation of quasi-crystals volume share in the melt have been derived. It has been found that the charge grain size affects the speed of quasi-crystals additional melting in the melt. The reference amount of quasi-crystals at the initial moment of large- and fine-grained charge melting has been calculated from our metallographic, experimental and estimated data

Investigation of radiation damage effects in neutron irradiated CCD

International Nuclear Information System (INIS)

Brau, James E.; Igonkina, Olga; Potter, Chris T.; Sinev, Nikolai B.

2005-01-01

A Charge Coupled Devices (CCD)-based vertex detector is a leading option for vertex detection at the future linear collider. A major issue for this application is the radiation hardness of such devices. Tests of radiation hardness of CCDs used in the SLD vertex detector, VXD3, have been reported earlier. The first measurements of 1998 involved a spare VXD3 CCD that was irradiated with neutrons from a radioactive source (Pu-Be), and from a nuclear reactor. In 2003, we had the opportunity to disassemble the VXD3 detector and study the nature of the radiation damage it incurred during 3 years of operation at SLC. In the preparation for this study, additional experiments with the spare VXD3 CCD were performed. These included measurements of trapping times in neutron irradiated CCDs. Results, reported here, will help us better understand the mechanism of radiation damage effects and develop techniques to minimize performance degradation due to radiation damage

Multiply charged ions of the oxygen - produced at interaction of laser radiation with two-element solids

International Nuclear Information System (INIS)

Bedilov, M.R.; Bedilov, R.M.; Kamalova, J.O.; Davletov, I.Yu.; Matnazarov, A.R.

2007-01-01

Full text: The interest to study of the oxygen multiply charged ions spectra produced at interaction laser radiation with one and two-element solids, is associate with possibility of creating laser and inertial thermonuclear syntheses, effective sources of multiply charged ions and nuclei atoms elements, plasma lasers, lasers on multiply charged transition, design of radiation-resistant materials and others. The present time many works is devoted to multiply charged ions, obtained from one element targets. Experimental results of study charge and energy spectra multiply charged ions of the oxygen, formed at interaction laser radiation with one and two-element solids are given in this work. Our experiments, we used installation, which is described in [1]. Neodymium laser had following parameters: wavelength 1.06 μm; intensity q = (0.1 h 1000) GW/sm 2 ; angle of incidence = 180. Were study one element Al, and two-element Al 2 O 3 , Y 2 O 3 targets by a diameter of 10 mm and thickness of 3 mm. Analysis obtained charge and energy spectra of multiply charged ions one (Al) and two-element (Al 2 O 3 , Y 2 O 3 ) targets depending on intensity of laser radiation and targets components reveal the following: - maximal charge number one element target (Al) at q 500 GW/sm 2 is equal Z max = 6 and all peaks corresponding to charge numbers Z = 1 - 6 well resolved, but two-element targets (Al 2 O 3 ) Z max ions Al decrease before 3. Also it is necessary to note that, Z max ions of the oxygen depend on target components. In case Al 2 O 3 and Y 2 O 3 maximal charge number of oxygen ions are equal Z max = 6 and 3, accordingly; - obtained charge and energy spectra of oxygen ions being included in two-element targets, are indicative of that, general regularities of the change Z max , E max and structures charge and energy spectra depending on q laser are saved. However they hang by target components; - common features and some differences of energy spectra multiply charged oxygen ions

Radiation-hard/high-speed parallel optical links

International Nuclear Information System (INIS)

Gan, K.K.; Buchholz, P.; Kagan, H.P.; Kass, R.D.; Moore, J.; Smith, D.S.; Wiese, A.; Ziolkowski, M.

2014-01-01

We have designed an ASIC for use in a parallel optical engine for a new layer of the ATLAS pixel detector in the initial phase of the LHC luminosity upgrade. The ASIC is a 12-channel VCSEL (Vertical Cavity Surface Emitting Laser) array driver capable of operating up to 5 Gb/s per channel. The ASIC is designed using a 130 nm CMOS process to enhance the radiation-hardness. A scheme for redundancy has also been implemented to allow bypassing of a broken VCSEL. The ASIC also contains a power-on reset circuit that sets the ASIC to a default configuration with no signal steering. In addition, the bias and modulation currents of the individual channels are programmable. The performance of the first prototype ASIC up to 5 Gb/s is satisfactory. Furthermore, we are able to program the bias and modulation currents and to bypass a broken VCSEL channel. We are currently upgrading our design to allow operation at 10 Gb/s per channel yielding an aggregated bandwidth of 120 Gb/s. Some preliminary results of the design will be presented

Femtosecond response of polyatomic molecules to ultra-intense hard X-rays.

Science.gov (United States)

Rudenko, A; Inhester, L; Hanasaki, K; Li, X; Robatjazi, S J; Erk, B; Boll, R; Toyota, K; Hao, Y; Vendrell, O; Bomme, C; Savelyev, E; Rudek, B; Foucar, L; Southworth, S H; Lehmann, C S; Kraessig, B; Marchenko, T; Simon, M; Ueda, K; Ferguson, K R; Bucher, M; Gorkhover, T; Carron, S; Alonso-Mori, R; Koglin, J E; Correa, J; Williams, G J; Boutet, S; Young, L; Bostedt, C; Son, S-K; Santra, R; Rolles, D

2017-06-01

X-ray free-electron lasers enable the investigation of the structure and dynamics of diverse systems, including atoms, molecules, nanocrystals and single bioparticles, under extreme conditions. Many imaging applications that target biological systems and complex materials use hard X-ray pulses with extremely high peak intensities (exceeding 10 20 watts per square centimetre). However, fundamental investigations have focused mainly on the individual response of atoms and small molecules using soft X-rays with much lower intensities. Studies with intense X-ray pulses have shown that irradiated atoms reach a very high degree of ionization, owing to multiphoton absorption, which in a heteronuclear molecular system occurs predominantly locally on a heavy atom (provided that the absorption cross-section of the heavy atom is considerably larger than those of its neighbours) and is followed by efficient redistribution of the induced charge. In serial femtosecond crystallography of biological objects-an application of X-ray free-electron lasers that greatly enhances our ability to determine protein structure-the ionization of heavy atoms increases the local radiation damage that is seen in the diffraction patterns of these objects and has been suggested as a way of phasing the diffraction data. On the basis of experiments using either soft or less-intense hard X-rays, it is thought that the induced charge and associated radiation damage of atoms in polyatomic molecules can be inferred from the charge that is induced in an isolated atom under otherwise comparable irradiation conditions. Here we show that the femtosecond response of small polyatomic molecules that contain one heavy atom to ultra-intense (with intensities approaching 10 20 watts per square centimetre), hard (with photon energies of 8.3 kiloelectronvolts) X-ray pulses is qualitatively different: our experimental and modelling results establish that, under these conditions, the ionization of a molecule is

Radiation-reaction force on a small charged body to second order

Science.gov (United States)

Moxon, Jordan; Flanagan, Éanna

2018-05-01

In classical electrodynamics, an accelerating charged body emits radiation and experiences a corresponding radiation-reaction force, or self-force. We extend to higher order in the total charge a previous rigorous derivation of the electromagnetic self-force in flat spacetime by Gralla, Harte, and Wald. The method introduced by Gralla, Harte, and Wald computes the self-force from the Maxwell field equations and conservation of stress-energy in a limit where the charge, size, and mass of the body go to zero, and it does not require regularization of a singular self-field. For our higher-order computation, an adjustment of the definition of the mass of the body is necessary to avoid including self-energy from the electromagnetic field sourced by the body in the distant past. We derive the evolution equations for the mass, spin, and center-of-mass position of the body through second order. We derive, for the first time, the second-order acceleration dependence of the evolution of the spin (self-torque), as well as a mixing between the extended body effects and the acceleration-dependent effects on the overall body motion.

RD50 Status Report 2009/2010 - Radiation hard semiconductor devices for very high luminosity colliders

CERN Document Server

Moll, Michael

2012-01-01

The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements for the upgrade of the LHC detectors. This document reports on the status of research and main results obtained in the years 2009 and 2010.

Anomalous metallic state with strong charge fluctuations in BaxTi8O16 +δ revealed by hard x-ray photoemission spectroscopy

Science.gov (United States)

Dash, S.; Kajita, T.; Okawa, M.; Saitoh, T.; Ikenaga, E.; Saini, N. L.; Katsufuji, T.; Mizokawa, T.

2018-04-01

We have studied a charge-orbital driven metal-insulator transition (MIT) in hollandite-type BaxTi8O16 +δ by means of hard x-ray photoemission spectroscopy (HAXPES). The Ti 2 p HAXPES indicates strong Ti3 +/Ti4 + charge fluctuation in the metallic phase above the MIT temperature. The metallic phase is characterized by a power-law spectral function near the Fermi level which would be a signature of bad metal with non-Drude polaronic behavior. The power-law spectral shape is associated with the large Seebeck coefficient of the metallic phase in BaxTi8O16 +δ .

Effect of heavy charged particles of galactic cosmic radiation on seeds

International Nuclear Information System (INIS)

Maksimova, E.N.

1985-01-01

The experiments were carried out on Lactuca sativa seeds exposed for 20, 66, 123 and 308 days in a biostack also containing physical detectors of heavy charged particles. The puppose of the experiments was to measure the yield of abberrant cells and its dependence on the exposure time and the site where particles hit the object. The cytogenetic examination demonstrated a significant difference between the seeds that were or were not hit by heavy charged particles. This is indicative of a significant contribution of galactic cosmic radiation to the radiobiological effect. The yield of aberrant cells as a function of the localization of heavy charged particles in the seed was established. The most sensitive target was the root meristem

The electric charge of the aerosols under gamma radiation

International Nuclear Information System (INIS)

Gensdarmes, F.; Cetier, P.; Boulaud, D.; Gensdarmes, F.; Renoux, A.

2000-01-01

During a PWR type reactor accident, the gamma radiation may create a high ionized atmosphere. In such a situation the aerosols properties knowledge is useful to simulate the particles transport and deposit in the enclosed. The aim of this study is to determine the aerosol charges distribution in a high ionized medium, in function of the ionic properties of the medium. (A.L.B.)

The chemistry of two-component fluoride crystalline optical media for heavy, fast, radiation hard scintillators

International Nuclear Information System (INIS)

Sobolev, B.P.; Krivandina, E.A.; Fedorov, P.P.; Vasilchenko, V.G.

1994-01-01

Prospects for preparation of two-component dense optical materials for scintillators are shown, using data on phase diagrams of about 300 MF m - RF n (m, n ≤ 4) type systems, formed by metal fluorides. Primary characteristics (decay time and light output of luminescence, radiation hardness, etc.) of some multicomponent crystals are reported

A mixed analog-digital radiation hard technology for high energy physics electronics DMILL (Durci Mixte sur Isolant Logico-Linéaire)

CERN Document Server

Beuville, E; Borgeaud, P; Fourches, N T; Rouger, M; Blanc, J P; Bruel, M; Delevoye-Orsier, E; Gautier, J; Du Port de Pontcharra, J; Truche, R; Dupont-Nivet, E; Flament, O; Leray, J L; Martin, J L; Montaron, J; Borel, G; Brice, J M; Chatagnon, P; Terrier, C; Aubert, Jean-Jacques; Delpierre, P A; Habrard, M C; Potheau, R; CERN. Geneva. Detector Research and Development Committee

1992-01-01

The high radiation level expected in the inner regions of the high luminosity LHC detectors (gamma and neutron) will require radiation hardened electronics. A consortium between the CEA (Commissariat a l'Energie Atomique) and Thomson TMS (Thomson Composants Militaires et Spatiaux) has been created to push for the development and the industrialization of a nascent technology which looks particularly adapted to the needs of HEP electronics. This technology, currently under development at the LETI(CEA), uses a SIMOX substrate with an epitaxial silicon film. It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. The CMOS and bipolar transistors constitute a rad-hard BiCMOS which will be useful to design analog and digital high-speed architectures. JFETs, which have intrinsically high hardness behaviour and low noise performances even at low temperature will enable very rad-hard, low noise front end electronics to be designed. Present results, together with the improvemen...

Rad Hard Active Media For Calorimeters

CERN Document Server

Norbeck, E; Möller, A; Onel, Y

2006-01-01

Zero-degree calorimeters have limited space and extreme levels of radiation. A simple, low cost, radiation hard design uses tungstenmetal as the absorber and a suitable liquid as the ˇCerenkov radiator. In other applications a PPAC (Parallel Plate Avalanche Counter) operatingwith a suitable atmosphericpressure gas is an attractive active material for a calorimeter. It can be made radiation hard and has sufficient gain in the gas that no electronic components are needed near the detector. It works well even with the highest concentration of shower particles. For this pressure range, R134A (used in auto air conditioners) has many desirable features.

arXiv Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process

CERN Document Server

INSPIRE-00541780; Cindro, V.; Gorišek, A.; Hemperek, T.; Kishishita, T.; Kramberger, G.; Krüger, H.; Mandić, I.; Mikuž, M.; Wermes, N.; Zavrtanik, M.

2017-10-25

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The r...

Review of the development of diamond radiation sensors

International Nuclear Information System (INIS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1999-01-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10 15 π cm -2 , 5x10 15 p cm -2 and 1.35x10 15 n cm -2 , respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

Review of the development of diamond radiation sensors

Science.gov (United States)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-09-01

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 μm have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9×10 15 π cm -2, 5×10 15 p cm -2 and 1.35×10 15 n cm -2, respectively. Diamond micro-strip detectors with 50 μm pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2×4 cm 2 surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions.

Construction of the radiation oncology teaching files system for charged particle radiotherapy.

Science.gov (United States)

Masami, Mukai; Yutaka, Ando; Yasuo, Okuda; Naoto, Takahashi; Yoshihisa, Yoda; Hiroshi, Tsuji; Tadashi, Kamada

2013-01-01

Our hospital started the charged particle therapy since 1996. New institutions for charged particle therapy are planned in the world. Our hospital are accepting many visitors from those newly planned medical institutions and having many opportunities to provide with the training to them. Based upon our experiences, we have developed the radiation oncology teaching files system for charged particle therapy. We adopted the PowerPoint of Microsoft as a basic framework of our teaching files system. By using our export function of the viewer any physician can create teaching files easily and effectively. Now our teaching file system has 33 cases for clinical and physics contents. We expect that we can improve the safety and accuracy of charged particle therapy by using our teaching files system substantially.

Radiative charge-transfer lifetime of the excited state of (NaCa)+

International Nuclear Information System (INIS)

Makarov, Oleg P.; Cote, R.; Michels, H.; Smith, W.W.

2003-01-01

New experiments were proposed recently to investigate the regime of cold atomic and molecular ion-atom collision processes in a special hybrid neutral-atom-ion trap under high-vacuum conditions. We study the collisional cooling of laser precooled Ca + ions by ultracold Na atoms. Modeling this process requires knowledge of the radiative lifetime of the excited singlet A 1 Σ + state of the (NaCa) + molecular system. We calculate the rate coefficient for radiative charge transfer using a semiclassical approach. The dipole radial matrix elements between the ground and the excited states, and the potential curves were calculated using complete active space self-consistent field and Moeller-Plesset second-order perturbation theory with an extended Gaussian basis, 6-311+G (3df). The semiclassical charge-transfer rate coefficient was averaged over a thermal Maxwellian distribution. In addition, we also present elastic collision cross sections and the spin-exchange cross section. The rate coefficient for charge transfer was found to be 2.3x10 -16 cm 3 /sec, while those for the elastic and spin-exchange cross sections were found to be several orders of magnitude higher (1.1x10 -8 cm 3 /sec and 2.3x10 -9 cm 3 /sec, respectively). This confirms our assumption that the milli-Kelvin regime of collisional cooling of calcium ions by sodium atoms is favorable with the respect to low loss of calcium ions due to the charge transfer

Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment

Energy Technology Data Exchange (ETDEWEB)

Vittone, E., E-mail: ettore.vittone@unito.it [Department of Physics, NIS Research Centre and CNISM, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Pastuovic, Z. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Breese, M.B.H. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Garcia Lopez, J. [Centro Nacional de Aceleradores (CNA), Sevilla University, J. Andalucia, CSIC, Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jaksic, M. [Department for Experimental Physics, Ruder Boškovic Institute (RBI), P.O. Box 180, 10002 Zagreb (Croatia); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland); Siegele, R. [Centre for Accelerator Science (ANSTO), Locked bag 2001, Kirrawee DC, NSW 2234 (Australia); Simon, A. [International Atomic Energy Agency (IAEA), Vienna International Centre, P.O. Box 100, 1400 Vienna (Austria); Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), Debrecen (Hungary); Vizkelethy, G. [Sandia National Laboratories (SNL), PO Box 5800, Albuquerque, NM (United States)

2016-04-01

Highlights: • We study the electronic degradation of semiconductors induced by ion irradiation. • The experimental protocol is based on MeV ion microbeam irradiation. • The radiation induced damage is measured by IBIC. • The general model fits the experimental data in the low level damage regime. • Key parameters relevant to the intrinsic radiation hardness are extracted. - Abstract: This paper investigates both theoretically and experimentally the charge collection efficiency (CCE) degradation in silicon diodes induced by energetic ions. Ion Beam Induced Charge (IBIC) measurements carried out on n- and p-type silicon diodes which were previously irradiated with MeV He ions show evidence that the CCE degradation does not only depend on the mass, energy and fluence of the damaging ion, but also depends on the ion probe species and on the polarization state of the device. A general one-dimensional model is derived, which accounts for the ion-induced defect distribution, the ionization profile of the probing ion and the charge induction mechanism. Using the ionizing and non-ionizing energy loss profiles resulting from simulations based on the binary collision approximation and on the electrostatic/transport parameters of the diode under study as input, the model is able to accurately reproduce the experimental CCE degradation curves without introducing any phenomenological additional term or formula. Although limited to low level of damage, the model is quite general, including the displacement damage approach as a special case and can be applied to any semiconductor device. It provides a method to measure the capture coefficients of the radiation induced recombination centres. They can be considered indexes, which can contribute to assessing the relative radiation hardness of semiconductor materials.

Parameterisation of radiation effects on CVD diamond for proton irradiation

International Nuclear Information System (INIS)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.

1999-01-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5 * 10 15 protons/cm 2 . The results not only show radiation damage but also an annealing effect that is dominant at levels around 10 15 protons/cm 2 . A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels

Performance ratio hardness characteristics polystyrene-metal composite materials

International Nuclear Information System (INIS)

Klepikov, V.F.; Prokhorenko, E.M.; Lytvynenko, V.V.; Zakharchenko, A.A.; Hazhmuradov, M.A.

2015-01-01

The methods of measuring the hardness of layered polystyrene-metallic composite materials. It is proposed to use powder-like tungsten and powder-like steel as radiation-protective layer. A measurement of the hardness of composites of different composition, and given its dependence on the particle size and their form. The possibility of increasing the hardness of the composites reinforced with metallic additives. Radiation-protective characteristics were calculated for the studied species of composite materials. Influence of the quantitative composition of the metal components is studied on the change of the absorbed dose of gamma radiation

Effect of far-UV and near-UV radiation on the cell surface charge of the protozoan Tritrichomonas foetus

Energy Technology Data Exchange (ETDEWEB)

Silva Filho, F C; Elias, C A; Souza, W de

1986-05-01

Cell electrophoresis was used to detect the effect of far-UV or near-UV radiation on the cell surface charge of the pathogenic protozoan Tritrichomonas foetus. Either far-UV or near-UV radiation interfered with the surface charge of T. foetus at fluences which inhibited cell growth by 50%. Both UV-radiations induced a significant decrease on surface charge of T. foetus, as evaluated by measurement of its electrophoretic mobility (EPM). Determinations of EPM of protozoa in solution of low ionic strength indicated that the decrease in the EPM induced by far-UV is much less pronounced that that observed for near-UV or control cells.

Effect of far-UV and near-UV radiation on the cell surface charge of the protozoan Tritrichomonas foetus

International Nuclear Information System (INIS)

Silva Filho, F.C.; Elias, C.A.; Souza, W. de

1986-01-01

Cell electrophoresis was used to detect the effect of far-UV or near-UV radiation on the cell surface charge of the pathogenic protozoan Tritrichomonas foetus. Either far-UV or near-UV radiation interfered with the surface charge of T. foetus at fluences which inhibited cell growth by 50%. Both UV-radiations induced a significant decrease on surface charge of T. foetus, as evaluated by measurement of its electrophoretic mobility (EPM). Determinations of EPM of protozoa in solution of low ionic strength indicated that the decrease in the EPM induced by far-UV is much less pronounced that that observed for near-UV or control cells. (author)

Treatment of Cerenkov radiation from electric and magnetic charges in dispersive and dissipative media

International Nuclear Information System (INIS)

Saffouri, M.H.

1982-07-01

A rigorous treatment of the problem of Cerenkov radiation from fast moving electric and magnetic charges is presented. This is based on the rigorous solution of Maxwell's equations in a general dispersive medium possessing dielectric and magnetic properties and with, and without, dissipation. It is shown that the fields are completely determined by one scalar function. Expressions for the exact fields are obtained. From the asymptotic fields all the relevant properties of Cerenkov radiation are reproduced. In particular, it is shown that in the absence of dissipation the energy in each mode travels with the phase velocity of that mode. For a dissipative medium the electric field develops a longitudinal component and the energy propagates at an angle to the phase velocity. Application to the case of a Tachyon shows that it must emit Cerenkov radiation in vacuum. An estimate is given for the resulting linear density of emitted radiation. Finally, two suggestions are made for the experimental detection of magnetic charges and electric dipole moments of elementary particles based upon the Cerenkov radiation which they would emit in dispersive media. (author)

Atomic physics and synchrotron radiation: The production and accumulation of highly charged ions

International Nuclear Information System (INIS)

Johnson, B.M.; Meron, M.; Agagu, A.; Jones, K.W.

1986-01-01

Synchrotron radiation can be used to produce highly-charged ions, and to study photoexcitation and photoionization for ions of virtually any element in the periodic table. To date, with few exceptions, atomic physics studies have been limited to rare gases and a few metal vapors, and to photoexcitation energies in the VUV region of the electromagnetic spectrum. These limitations can now be overcome using photons produced by high-brightness synchrotron storage rings, such as the x-ray ring at the National Synchrotron Light Source (NSLS) at Brookhaven. Furthermore, calculations indicate that irradiation of an ion trap with an intense energetic photon beam will result in a viable source of highly-charged ions that can be given the name PHOBIS: the PHOton Beam Ion Source. Promising results, which encourage the wider systematic use of synchrotron radiation in atomic physics research, have been obtained in recent experiments on VUV photoemission and the production and storage of multiply-charged ions. 26 refs., 4 figs., 1 tab

Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra...

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

2010-01-01

Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

Hard X-ray studies on the Castor tokamak

International Nuclear Information System (INIS)

Mlynar, J.

1990-04-01

The electron runaway processes in tokamaks are discussed with regard to hard X radiation measurements. The origin and confinement of runaway electrons, their bremsstrahlung spectra and the influence of lower hybrid current drive on the distribution of high-energy electrons are analyzed for the case of the Castor tokamak. The hard X-ray spectrometer designed for the Castor tokamak is also described and preliminary qualitative results of hard X-ray measurements are presented. The first series of integral measurements made it possible to map the azimuthal dependence of the hard X radiation

Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

Science.gov (United States)

Johnston, Michael B; Herz, Laura M

2016-01-19

values extracted from OPTP measurements and their dependence on perovskite composition and morphology. The significance of the reviewed charge-carrier recombination and mobility parameters is subsequently evaluated in terms of the charge-carrier diffusion lengths and radiative efficiencies that may be obtained for such hybrid perovskites. We particularly focus on calculating such quantities in the limit of ultra-low trap-related recombination, which has not yet been demonstrated but could be reached through further advances in material processing. We find that for thin films of hybrid lead iodide perovskites with typical charge-carrier mobilities of ∼30cm(2)/(V s), charge-carrier diffusion lengths at solar (AM1.5) irradiation are unlikely to exceed ∼10 μm even if all trap-related recombination is eliminated. We further examine the radiative efficiency for hybrid lead halide perovskite films and show that if high efficiencies are to be obtained for intermediate charge-carrier densities (n ≈ 10(14) cm(-3)) trap-related recombination lifetimes will have to be enhanced well into the microsecond range.

Hard synchrotron radiation scattering from a nonideal surface grating from multilayer X-ray mirrors

International Nuclear Information System (INIS)

Punegov, V.I.; Nesterets, Ya.I.; Mytnichenko, S.V.; Kovalenko, N.V.; Chernov, V.A.

2003-01-01

The hard synchrotron radiation scattering from a multilayer surface grating is theoretically and experimentally investigated. The numerical calculations of angular distribution of scattering intensity from X-ray mirror Ni/C are executed with use of recurrence formulae and statistical dynamical theory of diffraction. It is shown, that the essential role in formation of a diffraction pattern plays a diffuse scattering caused by structure imperfection of a multilayer grating [ru

Scintillation properties and X-ray irradiation hardness of Ce3+-doped Gd2O3-based scintillation glass

International Nuclear Information System (INIS)

Liu, Liwan; Shao, Chongyun; Zhang, Yu; Liao, Xili; Yang, Qiuhong; Hu, Lili; Chen, Danping

2016-01-01

Ce 3+ -doped Gd 2 O 3 -based scintillation glasses are prepared within an air or CO atmosphere. The effects of fluorine, lutetium, barium, and the melting atmosphere on the optical properties, scintillation properties and irradiation hardness are studied. Absorption spectra, luminescence spectra under UV and X-ray excitation, and the X-ray radiation-induced spectra are presented. The results show that the density can be increased by doping with fluorine, lutetium and barium. The luminescence intensity decreases after X-ray irradiation. Because of charge transfer quenching, fluorine and lutetium enhance the UV-excited and X-ray excited luminescence intensity, but barium decreases. Moreover, fluorine and lutetium are advantageous to irradiation hardness while barium is not. In addition, a non-reducing atmosphere provides a higher irradiation hardness than a reducing atmosphere. Fluorine-doped glass is promising to enhance luminescence intensity, promote irradiation hardness, and increase the density.

Parameterisation of radiation effects on CVD diamond for proton irradiation

Energy Technology Data Exchange (ETDEWEB)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M

1999-08-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5{sup *}10{sup 15} protons/cm{sup 2}. The results not only show radiation damage but also an annealing effect that is dominant at levels around 10{sup 15} protons/cm{sup 2}. A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels.

Development of radiation hardened pixel sensors for charged particle detection

CERN Document Server

Koziel, Michal

2014-01-01

CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-energy physics experiments with the crucial advantages of a low material budget and low production costs. The features simultaneously required are a short readout time, high granularity and high tolerance to radiation. This thesis mainly focuses on the radiation tolerance studies. To achieve the targeted readout time (tens of microseconds), the sensor pixel readout was organized in parallel columns restricting in addition the readout to pixels that had collected the signal charge. The pixels became then more complex, and consequently more sensitive to radiation. Different in-pixel architectures were studied and it was concluded that the tolerance to ionizing radiation was limited to 300 krad with the 0.35- m fabrication process currently used, while the targeted value was several Mrad. Improving this situation calls for implementation of the sensors in processes with a smaller feature size which naturally imp...

Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

Energy Technology Data Exchange (ETDEWEB)

Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F. [CNRS-IN2P3-IPN Orsay, Orsay (France)

2007-07-01

Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators ({approx}24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: {approx}20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T{approx}4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35{mu}A) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose ({approx}20%): a neutrons fluence of more than 10{sup 14} n/cm{sup 2} is achieved in {approx}20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T{approx}4.2 K. This new apparatus allows on-line automatic measurements

Radiation hardness tests of piezoelectric actuators with fast neutrons at liquid helium temperature

International Nuclear Information System (INIS)

Fouaidy, M.; Martinet, G.; Hammoudi, N.; Chatelet, F.; Olivier, A.; Blivet, S.; Galet, F.

2007-01-01

Piezoelectric actuators, which are integrated into the cold tuning system and used to compensate the small mechanical deformations of the cavity wall induced by Lorentz forces due to the high electromagnetic surface field, may be located in the radiation environment during particle accelerator operation. In order to provide for a reliable operation of the accelerator, the performance and life time of piezoelectric actuators (∼24.000 units for ILC) should not show any significant degradation for long periods (i.e. machine life duration: ∼20 years), even when subjected to intense radiation (i.e. gamma rays and fast neutrons). An experimental program, aimed at investigating the effect of fast neutrons radiation on the characteristics of piezoelectric actuators at liquid helium temperature (i.e. T∼4.2 K), was proposed for the working package WPNo.8 devoted to tuners development in the frame of CARE project. A neutrons irradiation facility, already installed at the CERI cyclotron located at Orleans (France), was upgraded and adapted for actuators irradiations tests purpose. A deuterons beam (maximum energy and beam current: 25 MeV and 35μA) collides with a thin (thickness: 3 mm) beryllium target producing a high neutrons flux with low gamma dose (∼20%): a neutrons fluence of more than 10 14 n/cm 2 is achieved in ∼20 hours of exposure. A dedicated cryostat was developed at IPN Orsay and used previously for radiation hardness test of calibrated cryogenic thermometers and pressure transducers used in LHC superconducting magnets. This cryostat could be operated either with liquid helium or liquid argon. This irradiation facility was upgraded for allowing fast turn-over of experiments and a dedicated experimental set-up was designed, fabricated, installed at CERI and successfully operated for radiation hardness tests of several piezoelectric actuators at T∼4.2 K. This new apparatus allows on-line automatic measurements of actuators characteristics and the

Ionic pairing in binary liquids of charged hard spheres with non-additive diameters

International Nuclear Information System (INIS)

Pastore, G.; Giaquinta, P.V.; Thakur, J.S.; Tosi, M.P.

1985-07-01

We examine types of short range order that arise in binary liquids from a combination of Coulombic interactions and non-additivity of excluded volumes, the initial motivation being observations of complex formation by hydrated ions in concentrated aqueous solutions. The model is a fluid of charged hard spheres with contact distances σsub(+-)not=1/2(σsub(++)+σsub(--)), its structural functions being evaluated in the mean spherical approximation and in the hypernetted chain approximation. Cation-anion pairing is clearly seen in the calculated structural functions for negative deviations from additivity (σsub(+-) σsub(++)=σsub(--)) favour long-wavelength concentration fluctuations and demixing in a neutral mixture: these are suppressed by Coulombic interactions in favour of microscopic intermixing of the two species in the local liquid structure, up to like-ion pairing. Contact is made with diffraction from concentrated aqueous solutions of cadmium sulphate and other instances of possible applicability of the model are pointed out. (author)

Space charge dosimeters for extremely low power measurements of radiation in shipping containers

Science.gov (United States)

Britton, Jr; Charles, L [Alcoa, TN; Buckner, Mark A [Oak Ridge, TN; Hanson, Gregory R [Clinton, TN; Bryan, William L [Knoxville, TN

2011-04-26

Methods and apparatus are described for space charge dosimeters for extremely low power measurements of radiation in shipping containers. A method includes in situ polling a suite of passive integrating ionizing radiation sensors including reading-out dosimetric data from a first passive integrating ionizing radiation sensor and a second passive integrating ionizing radiation sensor, where the first passive integrating ionizing radiation sensor and the second passive integrating ionizing radiation sensor remain situated where the dosimetric data was integrated while reading-out. Another method includes arranging a plurality of ionizing radiation sensors in a spatially dispersed array; determining a relative position of each of the plurality of ionizing radiation sensors to define a volume of interest; collecting ionizing radiation data from at least a subset of the plurality of ionizing radiation sensors; and triggering an alarm condition when a dose level of an ionizing radiation source is calculated to exceed a threshold.

Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes

CERN Document Server

Lange, Jörn; Fretwurst, Eckhart; Klanner, Robert; Lindström, Gunnar

2010-01-01

Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $\\alpha$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. The dependence of CM on material, thickness of the epitaxial layer, annealing and temperature was studied. The collected charge in the CM regime was found to be proportional to the deposited charge, uniform over the diode area and stable over a period of several days. Randomly occurring micro discharges at high voltages turned out to be the largest challenge for operation of the dio...

On the Remarkable Features of the Lower Limits of Charge and the Radiated Energy of Antennas as Predicted by Classical Electrodynamics

Directory of Open Access Journals (Sweden)

Vernon Cooray

2016-05-01

Full Text Available Electromagnetic energy radiated by antennas working in both the frequency domain and time domain is studied as a function of the charge associated with the current in the antenna. The frequency domain results, obtained under the assumption of sinusoidal current distribution, show that, for a given charge, the energy radiated within a period of oscillation increases initially with L/λ and then starts to oscillate around a steady value when L/λ > 1. The results show that for the energy radiated by the antenna to be equal to or larger than the energy of one photon, the oscillating charge in the antenna has to be equal to or larger than the electronic charge. That is, U ≥ hν or UT ≥ h ⇒ q ≥ e, where U is the energy dissipated over a period, ν is the frequency of oscillation, T is the period, h is Planck’s constant, q is the rms value of the oscillating charge, and e is the electronic charge. In the case of antennas working in the time domain, it is observed that UΔt ≥ h/4π ⇒ q ≥ e, where U is the total energy radiated, Δt is the time over which the energy is radiated, and q is the charge transported by the current. It is shown that one can recover the time–energy uncertainty principle of quantum mechanics from this time domain result. The results presented in this paper show that when quantum mechanical constraints are applied to the electromagnetic energy radiated by a finite antenna as estimated using the equations of classical electrodynamics, the electronic charge emerges as the smallest unit of free charge in nature.

Radiation-hard ASICS for sLHC optical data transmission

International Nuclear Information System (INIS)

Gan, K.K.

2009-01-01

High-speed data transmission in a high radiation environment poses an immense challenge in the detector design. We investigate the feasibility of using optical links for the silicon trackers of the ATLAS experiment for the planned upgrade of the LHC. The planned upgrade with ten times higher collision rate will produce a similar increase in the radiation. One possibility for the optical transmission is to use VCSEL arrays operating at 850 nm to transmit optical signals while using PIN arrays to convert the optical signals into electrical signals. We have designed a prototype chip containing building blocks for future SLHC optical links using a 130 nm CMOS 8RF process. The chip contains four main blocks; a VCSEL driver optimized for operation at 640 Mb/s, a VCSEL driver optimized for 3.2 Gb/s, a PIN receiver with a clock/data recovery circuit for operation at 40, 160, and 320 Mb/s, and two clock multipliers designed to operate at 640 Mb/s. The clock multiplier is designed to produce the high speed clock to serialize the data for transmission. All circuitry was designed following test results and guidelines from CERN on radiation tolerant design for the process. We have irradiated the chips with 24 GeV protons at CERN. For the VDC, the duty cycle of the output signal and the current consumption of the LVDS receiver remained constant during the irradiation. However, we observed significant decreases in the current consumption of the VCSEL driver circuit and the output drive current. This indicated that the think oxide layout used in the VCSEL driver portion of the chip might not be as radiation-hard and the circuit had been redesigned to minimize this sensitivity. For the PIN receiver, we found that the radiation produced no significant degradation, including the single event upset rate. The upset rate decreased with larger PIN current and was higher for a chip coupled to a PIN diode as expected. For the clock multipliers, we observed that the clocks of some chips

Radiation detectors based by polymer materials

International Nuclear Information System (INIS)

Cherestes, Margareta; Cherestes, Codrut; Constantinescu, Livia

2004-01-01

Scintillation counters make use of the property of certain chemical compounds to emit short light pulses after excitation produced by the passage of charged particles or photons of high energy. These flashes of light are detected by a photomultiplier tube that converts the photons into a voltage pulse. The light emitted from the detector also can be collected, focussed and dispersed by a CCD detector. The study of the evolution of the light emission and of the radiation damage under irradiation is a primary topic in the development of radiation hard polymer based scintillator. Polymer scintillator thin films are used in monitoring radiation beam intensities and simultaneous counting of different radiations. Radiation detectors have characteristics which depend on: the type of radiation, the energy of radiation, and the material of the detector. Three types of polymer thin films were studied: a polyvinyltoluene based scintillator, fluorinated polyimide and PMMA. (authors)

The electric charge of the aerosols under gamma radiation; La charge electrique des aerosols sous irradiation gamma

Energy Technology Data Exchange (ETDEWEB)

Gensdarmes, F.; Cetier, P.; Boulaud, D. [CEA/Saclay, Inst. de Protection et de Surete Nucleaire, IPSN/DPEA/SERAC, 91 - Gif-sur-Yvette (France); Renoux, A. [Paris-12 Univ., Lab. de Physique des Aerosols et de Transfert des Contaminations, 94 - Creteil (France)

2000-07-01

During a PWR type reactor accident, the gamma radiation may create a high ionized atmosphere. In such a situation the aerosols properties knowledge is useful to simulate the particles transport and deposit in the enclosed. The aim of this study is to determine the aerosol charges distribution in a high ionized medium, in function of the ionic properties of the medium. (A.L.B.)

Investigation of characteristics and radiation hardness of the Beetle 1.0 front-end chip

CERN Document Server

Van Bakel, N; Jans, E; Klous, S; Verkooijen, H

2001-01-01

Noise characteristics of the Beetle 1.0 front-end chip have been investigated as a function of input capacitance. Values for the equivalent noise charge and ballastic deficit have been extracted. Amplification and pulse shape have been studied by varying the bias settings over a wide range. Results are compared with simulations that include realistic impedances at the input and output. The chip has been subjected to 10 Mrad of radiation. Subsequently, its behaviour is measured again and compared to that preceeding the irradiation. Observed radiation damage effects are discussed.

Review of the development of diamond radiation sensors

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J. E-mail: josel.hrubec@cern.ch; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-09-11

Diamond radiation sensors produced by chemical vapour deposition are studied for the application as tracking detectors in high luminosity experiments. Sensors with a charge collection distance up to 250 {mu}m have been manufactured. Their radiation hardness has been studied with pions, proton and neutrons up to fluences of 1.9x10{sup 15} {pi} cm{sup -2}, 5x10{sup 15} p cm{sup -2} and 1.35x10{sup 15} n cm{sup -2}, respectively. Diamond micro-strip detectors with 50 {mu}m pitch have been exposed in a high-energy test beam in order to investigate their charge collection properties. The measured spatial resolution using a centre-of-gravity position finding algorithm corresponds to the digital resolution for this strip pitch. First results from a strip tracker with a 2x4 cm{sup 2} surface area are reported as well as the performance of a diamond tracker read out by radiation-hard electronics with 25 ns shaping time. Diamond pixel sensors have been prepared to match the geometries of the recently available read-out chip prototypes for ATLAS and CMS. Beam test results are shown from a diamond detector bump-bonded to an ATLAS prototype read-out. They demonstrate a 98% bump-bonding efficiency and a digital resolution in both dimensions. (author)

A radiation hard dipole magnet coils using aluminum clad copper conductors

International Nuclear Information System (INIS)

Leonhardt, W.J.

1989-01-01

A C-type septum dipole magnet is located 600 mm downstream of the primary target in an external beam line of the AGS. Conventional use of fiber glass/epoxy electrical insulation for the magnet coils results in their failure after a relatively short running period, therefore a radiation hard insulation system is required. This is accomplished by replacing the existing copper conductor with a copper conductor having a thin aluminum skin which is anodized to provide the electrical insulation. Since the copper supports a current density of 59 A/mm 2 , no reduction in cross sectional area can be tolerated. Design considerations, manufacturing techniques, and operating experience of a prototype dipole is presented. 3 refs., 4 figs

Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

International Nuclear Information System (INIS)

Rummel, Stefan

2009-01-01

The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e - at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e - using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed with

Investigation of DEPFET as vertex detector at ILC. Intrinsic properties, radiation hardness and alternative readout schemes

Energy Technology Data Exchange (ETDEWEB)

Rummel, Stefan

2009-07-20

The International Linear Collider (ILC) is supposed to be the next generation lepton collider. The detectors at ILC are intended to be precision instruments improving the performance in impact parameter (IP), momentum and energy resolution significantly compared to previous detectors at lepton colliders. To achieve this goal it is necessary to develop new detector technologies or pushing existing technologies to their technological edges. Regarding the Vertex detector (VTX) this implies challenges in resolution, material budget, power consumption and readout speed. A promising technology for the Vertex detector is the Depleted Field Effect Transistor (DEPFET). The DEPFET is a semiconductor device with in-pixel ampli cation integrated on a fully depleted bulk. This allows building detectors with intrinsically high SNR due to the large sensitive volume and the small input capacitance at the rst ampli er. To reach the ambitious performance goals it is important to understand its various features: clear performance, internal amplification, noise and radiation hardness. The intrinsic noise is analyzed, showing that the contribution of the DEPFET is below 50 e{sup -} at the required speed. Moreover it is possible to show that the internal ampli cation could be further improved to more than 1nA/e{sup -} using the standard DEPFET technology. The clear performance is investigated on matrix level utilizing a dedicated setup for single pixel testing which allows direct insight into the DEPFET operation, without the complexity of the full readout system. It is possible to show that a full clear could be achieved with a voltage pulse of 10 V. Furthermore a novel clear concept - the capacitive coupled clear gate - is demonstrated. The radiation hardness is studied with respect to the system performance utilizing various irradiations with ionizing and non ionizing particles. The impact on the bulk as well as the interface damage is investigated. Up to now the readout is performed

Study of Radiation Hardness of Gd2SiO5 scintillator for Heavy Ion Beam

CERN Document Server

Kawade, K; Itow, Y; Masuda, K; Murakami, T; Sako,T; Suzuki, K; Suzuki, T; Taki, K

2011-01-01

Gd2SiO5 (GSO) scintillator has very excellent radiation resistance, a fast decay time and a large light yield. Because of these features, GSO scintillator is a suitable material for high radiation environment experiments such as those encountered at high energy accelerators. The radiation hardness of GSO has been measured with Carbon ion beams at the Heavy Ion Medical Accelerator in Chiba (HIMAC). During two nights of irradiation the GSO received a total radiation dose of 7 × 10$^5$ Gy and no decrease of light yield was observed. On the other hand an increase of light yield by 25% was observed. The increase is proportional to the total dose, increasing at a rate of 0.025%/Gy and saturating at around 1 kGy. Recovery to the initial light yield was also observed during the day between two nights of radiation exposure. The recovery was observed to have a slow exponential time constant of approximately 1.5 × 10$^4$ seconds together with a faster component. In case of the LHCf experiment, a very forward region ex...

A Method for Estimating the Probability of Floating Gate Prompt Charge Loss in a Radiation Environment

Science.gov (United States)

Edmonds, L. D.

2016-01-01

Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.

Radiative recombination of highly charged ions: Enhanced rates at low energies

International Nuclear Information System (INIS)

Frank, A.; Mueller, A.; Haselbauer, J.; Schennach, S.; Spies, W.; Uwira, O.; Wagner, M.

1992-01-01

In a single-pass merged-beams experiment employing a dense cold electron target recombination of highly charged ions is studied. Unexpected high recombination rates are observed at low energies E cm in the electron-ion center-of-mass frame. In particular, theoretical estimates for radiative recombination are dramatically exceeded by the experimental recombination rates at E cm =0 eV for U 28+ and for Au 25+ ions. Considerable rate enhancement is also observed for Ar 15+ . This points to a general phenomenon which has to be interpreted as a consequence of high electron densities, low electron beam temperatures, high ion charge states and presence of strong magnetic fields. (orig.)

Transport, charge exchange and loss of energetic heavy ions in the earth's radiation belts - Applicability and limitations of theory

Science.gov (United States)

Spjeldvik, W. N.

1981-01-01

Computer simulations of processes which control the relative abundances of ions in the trapping regions of geospace are compared with observations from discriminating ion detectors. Energy losses due to Coulomb collisions between ions and exospheric neutrals are considered, along with charge exchange losses and internal charge exchanges. The time evolution of energetic ion fluxes of equatorially mirroring ions under radial diffusion is modelled to include geomagnetic and geoelectric fluctutations. Limits to the validity of diffusion transport theory are discussed, and the simulation is noted to contain provisions for six ionic charge states and the source effect on the radiation belt oxygen ion distributions. Comparisons are made with ion flux data gathered on Explorer 45 and ISEE-1 spacecraft and results indicate that internal charge exchanges cause the radiation belt ion charge state to be independent of source charge rate characteristics, and relative charge state distribution is independent of the radially diffusive transport rate below the charge state redistribution zone.

Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

Science.gov (United States)

Rustagi, Avinash; Stanton, C. J.

2016-11-01

We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.

Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

National Research Council Canada - National Science Library

Ahn, Charles H

2006-01-01

The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

Electromagnetic Radiation of Electrons in Periodic Structures

CERN Document Server

Potylitsyn, Alexander Petrovich

2011-01-01

Periodic magnetic structures (undulators) are widely used in accelerators to generate monochromatic undulator radiation (UR) in the range from far infrared to the hard X-ray region. Another periodic crystalline structure is used to produce quasimonochromatic polarized photon beams via the coherent bremsstrahlung mechanism (CBS). Due to such characteristics as monochromaticity, polarization and adjustability, these types of radiation is of large interest for applied and basic research of accelerator-emitted radiation. The book provides a detailed overview of the fundamental principles behind electromagnetic radiation emitted from accelerated charged particles (e.g. UR, CBS, radiation of fast electrons in Laser flash fields) as well as a unified description of relatively new radiation mechanisms which attracted great interest in recent years. This are the so-called polarization radiation excited by the Coulomb field of incident particles in periodic structures, parametric X-rays, resonant transition radiation a...

Development of Radiation-hard Bandgap Reference and Temperature Sensor in CMOS 130 nm Technology

CERN Document Server

Kuczynska, Marika; Bugiel, Szymon; Firlej, Miroslaw; Fiutowski, Tomasz; Idzik, Marek; Michelis, Stefano; Moron, Jakub; Przyborowski, Dominik; Swientek, Krzysztof

2015-01-01

A stable reference voltage (or current) source is a standard component of today's microelectronics systems. In particle physics experiments such reference is needed in spite of harsh ionizing radiation conditions, i.e. doses exceeding 100 Mrads and fluences above 1e15 n/cm2. After such radiation load a bandgap reference using standard p-n junction of bipolar transistor does not work properly. Instead of using standard p-n junctions, two enclosed layout transistor (ELTMOS) structures are used to create radiation-hard diodes: the ELT bulk diode and the diode obtained using the ELTMOS as dynamic threshold transistor (DTMOS). In this paper we have described several sub-1V references based on ELTMOS bulk diode and DTMOS based diode, using CMOS 130 nm process. Voltage references the structures with additional PTAT (Proportional To Absolute Temperature) output for temperature measurements were also designed. We present and compare post-layout simulations of the developed bandgap references and temperature sensors, w...

To the problem on a charge state of energetic ions of radiation belts

International Nuclear Information System (INIS)

Panasyuk, M.I.

1980-01-01

Estimation of the effect of recharging processes upon formation of intensity maxima of radiation belt ions of different types is obtained as well as the ion charge states in the area of intensity maxima. Comparison of spatial position of intensity maxima of the H, He, C, O ions with the energies more than 1 MeV with the calculation results is presented. It provides the particle radial drift under the effect of sudden impulses and death at the expence of ionization losses. Application of adiabaticity criterion of the particle movement to the analysis of position of outer edge of radiation belt of heavy ions permitted to carry out estimation of the He, C, O ion charge state. He ions with the energy more than 1 MeV possess mainly the charge state of +2, C and O ions with the energy of several MeV over L=5-6 are in the ionized state almost completely, and during the drift into the depth of the belts the ion charge decreases to 3-4 over L approximately 3.5 with the energy increase. At the energies higher than several MeV the recharge processes are significant for the C and.O ions. For He ions with the energy higher 1 MeV and for H ions with more than 0.1 MeV the recharge role is not considerable

Dielectric spectroscopy of [P(NID2OD-T2)]n thin films: Effects of UV radiation on charge transport

International Nuclear Information System (INIS)

Sepulveda, Pablo I.; Rosado, Alexander O.; Pinto, Nicholas J.

2014-01-01

Poly[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyll-alt-5,5′-(2,2′-bithiophene)]-[P(ND12OD-T2)] n is a n-doped polymer that is stable in air. Low frequency (40 Hz–30 kHz) dielectric spectroscopy shows that the polymer impedance strength is reduced under ultra-violet (UV) radiation as a result of charge increase in the bulk polymer. Photo-excitation and the creation of electron-hole pairs and subsequent hole recombination with electron trapping species adsorbed by the polymer are suggested as possible doping mechanisms. The relaxation times were also faster in the presence of UV indicating multiple pathways for oscillating dipoles to relax. These results imply increased polymer conductance with corresponding enhancement of charge mobility due to reduced scattering in the presence of UV radiation. A thin film field effect transistor was fabricated using this polymer as the active material and characterized in the presence of UV radiation. As expected, the device exhibited n-type behavior with a charge mobility of 3.0 × 10 −3 cm 2 /V-s. Exposure to UV radiation increased the channel current, shifted the threshold voltage to more negative values and doubled the value of the mobility. These results are consistent with dielectric measurements and suggest an easy method of increasing device currents and charge mobility in this polymer via UV irradiation. - Highlights: • Ultra-violet (UV) radiation dopes the polymer. • The doping is n-type. • UV radiation enhances charge mobility without post polymer processing. • Dielectric spectroscopy and field effect transistor results are self-consistent

Radiative decay following low energy charge exchange collisions at the Agrippa facility

International Nuclear Information System (INIS)

Bliman, S.; Dousson, S.; Hitz, D.; Mayo, M.; Bonnet, J.J.; Bordenave Montesquieu, A.; Druetta, M.

1985-01-01

From radiative decay observed in the X and VUV domain, it is possible to determine the (n,l) substate populations and deduce their excitation cross sections. We consider here the case of different projectiles of charge +8. For some of them, we show sigmasub(nl) for single capture from H 2 and He, as a function of energy. From the spectra it is recognized that double capture followed by radiative decay is effecitve. Observed transitions - of the same nature as dielectronic recombination satellites - are the signature of this process. Finally, in the case where energy levels are not known since the capture is a selective process, radiative decay appears thus as a means for basic spectroscopic studies. (orig.)

Charged Massive Particle’s Tunneling from Charged Nonrotating Microblack Hole

Directory of Open Access Journals (Sweden)

M. J. Soleimani

2016-01-01

Full Text Available In the tunneling framework of Hawking radiation, charged massive particle’s tunneling in charged nonrotating TeV-scale black hole is investigated. To this end, we consider natural cutoffs as a minimal length, a minimal momentum, and a maximal momentum through a generalized uncertainty principle. We focus on the role played by these natural cutoffs on the luminosity of charged nonrotating microblack hole by taking into account the full implications of energy and charge conservation as well as the backscattered radiation.

Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

Energy Technology Data Exchange (ETDEWEB)

Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

2016-12-15

The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

Visualization of Cerenkov radiation and the fields of a moving charge

International Nuclear Information System (INIS)

Pfeifer, Robert N C; Nieminen, Timo A

2006-01-01

For some physics students, the concept of a particle travelling faster than the speed of light holds endless fascination, and Cerenkov radiation is a visible consequence of a charged particle travelling through a medium at locally superluminal velocities. The Heaviside-Feynman equations for calculating the magnetic and electric fields of a moving charge have been known for many decades, but it is only recently that the computing power to plot the fields of such a particle has become readily available for student use. This paper investigates and illustrates the calculation of Maxwell's D field in homogeneous isotropic media for arbitrary, including superluminal, constant velocity, and uses the results as a basis for discussing energy transfer in the electromagnetic field

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Science.gov (United States)

Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

2017-07-01

Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

Dynamics of Charged Particles and their Radiation Field

International Nuclear Information System (INIS)

Poisson, E

2006-01-01

The motion of a charged particle interacting with its own electromagnetic field is an area of research that has a long history. On the one hand the theory ought to be straightforward to formulate: one has Maxwell's equations that tell the field how to behave and one has the Lorentz-force law that tells the particle how to move (given the field). On the other hand the theory is fundamentally ambiguous because of the field singularities that necessarily come with a point particle. While each separate sub-problem can easily be solved, to couple the field to the particle in a self-consistent treatment turns out to be tricky. I believe it is this dilemma that has been the main source of the endless fascination. For them it is also rooted in the fact that the electromagnetic self-force problem is deeply analogous to the gravitational self-force problem, which is of direct relevance to future gravitational wave observations. The motion of point particles in curved spacetime has been the topic of a recent Topical Review, and it was the focus of a recent Special Issue. Exceptions are Rohrlich's excellent text, which makes a very useful introduction to radiation reaction, and the Landau and Lifshitz classic, which contains what is probably the most perfect summary of the foundational ideas. It is therefore with some trepidation that I received Herbert Spohn's book, which covers both the classical and quantum theories of a charged particle coupled to its own field (the presentation is limited to flat spacetime). Is this the text that graduate students and researchers should turn to in order to get a complete and accessible education in radiation reaction? My answer is that while the book does indeed contain a lot of useful material, it is not a very accessible source of information, and it is certainly not a student-friendly textbook. Instead, the book presents a technical account of the author's personal take on the theory, and represents a culminating summary of the author

Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

Science.gov (United States)

Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

2008-03-01

The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

CERN Document Server

Kazakevich, L A

2003-01-01

It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

Radiation hard solar cell and array

International Nuclear Information System (INIS)

Russell, R.L.

1975-01-01

A power generating solar cell for a spacecraft solar array is hardened against transient response to nuclear radiation while permitting normal operation of the cell in a solar radiation environment by shunting the cell with a second solar cell whose contacts are reversed relative to the power cell to form a cell module, exposing the power cell only to the solar radiation in a solar radiation environment to produce an electrical output at the module terminals, and exposing both cells to the nuclear radiation in a nuclear radiation environment so that the radiation induced currents generated by the cells suppress one another

Chemodynamics of metal ion complexation by charged nanoparticles: a dimensionless rationale for soft, core-shell and hard particle types.

Science.gov (United States)

Duval, Jérôme F L

2017-05-17

Soft nanoparticulate complexants are defined by a spatial confinement of reactive sites and electric charges inside their 3D body. In turn, their reactivity with metal ions differs significantly from that of simple molecular ligands. A revisited form of the Eigen mechanism recently elucidated the processes leading to metal/soft particle pair formation. Depending on e.g. particle size and metal ion nature, chemodynamics of nanoparticulate metal complexes is controlled by metal conductive diffusion to/from the particles, by intraparticulate complex formation/dissociation kinetics, or by both. In this study, a formalism is elaborated to achieve a comprehensive and systematic identification of the rate-limiting step governing the overall formation and dissociation of nanoparticulate metal complexes. The theory covers the different types of spherical particulate complexants, i.e. 3D soft/permeable and core-shell particles, and hard particles with reactive sites at the surface. The nature of the rate-limiting step is formulated by a dynamical criterion involving a power law function of the ratio between particle radius and an intraparticulate reaction layer thickness defined by the key electrostatic, diffusional and kinetic components of metal complex formation/dissociation. The analysis clarifies the intertwined contributions of particle properties (size, soft or hard type, charge, density or number of reactive sites) and aqueous metal ion dehydration kinetics in defining the chemodynamic behavior of nanoparticulate metal complexes. For that purpose, fully parameterized chemodynamic portraits involving the defining features of particulate ligand and metal ion as well as the physicochemical conditions in the local intraparticulate environment, are constructed and thoroughly discussed under conditions of practical interest.

Radiation Failures in Intel 14nm Microprocessors

Science.gov (United States)

Bossev, Dobrin P.; Duncan, Adam R.; Gadlage, Matthew J.; Roach, Austin H.; Kay, Matthew J.; Szabo, Carl; Berger, Tammy J.; York, Darin A.; Williams, Aaron; LaBel, K.;

Environmental radiation and exposure to radiation

International Nuclear Information System (INIS)

1981-02-01

Compared to 1977 the exposure to radiation of the population of the Federal Republic of Germany from both natural and artificial radiation sources has not greatly charged. The amin part of exposure to natural radiation is caused by environmental radiation and by the absorption of naturally radioactive substances into the body. Artificial exposure to radiation of the population is essentially caused by the use of ionizing rays and radioactive substances in medicine. When radioactive materials are released from nuclear facilities the exposure to radiation of the population is only very slightly increased. The real exposure to radiation of individual people can even in the worst affected places, have been at most fractions of a millirem. The exposure to radiation in the worst afected places in the area of a hard-coal power station is higher than that coming from a nuclear power station of the same capacity. The summation of all contributions to the exposure of radiation by nuclear facilities to the population led in 1978 in the Federal Republic of Germany to a genetically significant dose of clearly less than 1 millerem per year. The medium-ranged exposure to radiation by external radiation effects through professional work was in 1978 at 80 millirems. No difference to 1977. The contribution of radionuclide from the fallout coming from nuclear-weapon tests and which has been deposited in the soil, to the whole-body dose for 1978 applies the same as the genetically significant dose of the population with less than 1 millirem. (orig./HP) [de

Radiative corrections to Expt. 416. Backward πN charge exchange. Internal report No. 131

International Nuclear Information System (INIS)

Chen, G.T.Y.

The importance of radiative corrections in elastic hadronic reactions has been reported recently. This report describes the computational techniques and results of applying the radiative corrections to a backward charge-exchange scattering experiment. The particular reaction considered is π - p → π 0 + n + γ Evaluation of the Schwinger term, evaluation of the numerical integration term, evaluation of the region in which the photon is detected and a check of the unitarity condition are considered. Appendixes contain listings of computer codes written to calculate radiative corrections. (19 figures, 2 tables) (U.S.)

Cryogenic and radiation-hard asic for interfacing large format NIR/SWIR detector arrays

Science.gov (United States)

Gao, Peng; Dupont, Benoit; Dierickx, Bart; Müller, Eric; Verbruggen, Geert; Gielis, Stijn; Valvekens, Ramses

2017-11-01

For scientific and earth observation space missions, weight and power consumption is usually a critical factor. In order to obtain better vehicle integration, efficiency and controllability for large format NIR/SWIR detector arrays, a prototype ASIC is designed. It performs multiple detector array interfacing, power regulation and data acquisition operations inside the cryogenic chambers. Both operation commands and imaging data are communicated via the SpaceWire interface which will significantly reduce the number of wire goes in and out the cryogenic chamber. This "ASIC" prototype is realized in 0.18um CMOS technology and is designed for radiation hardness.

Development of CVD diamond radiation detectors

CERN Document Server

Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

1998-01-01

Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

Photon technology. Hard photon technology; Photon technology. Hard photon gijutsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-03-01

Research results of hard photon technology have been summarized as a part of novel technology development highly utilizing the quantum nature of photon. Hard photon technology refers to photon beam technologies which use photon in the 0.1 to 200 nm wavelength region. Hard photon has not been used in industry due to the lack of suitable photon sources and optical devices. However, hard photon in this wavelength region is expected to bring about innovations in such areas as ultrafine processing and material synthesis due to its atom selective reaction, inner shell excitation reaction, and spatially high resolution. Then, technological themes and possibility have been surveyed. Although there are principle proposes and their verification of individual technologies for the technologies of hard photon generation, regulation and utilization, they are still far from the practical applications. For the photon source technology, the laser diode pumped driver laser technology, laser plasma photon source technology, synchrotron radiation photon source technology, and vacuum ultraviolet photon source technology are presented. For the optical device technology, the multi-layer film technology for beam mirrors and the non-spherical lens processing technology are introduced. Also are described the reduction lithography technology, hard photon excitation process, and methods of analysis and measurement. 430 refs., 165 figs., 23 tabs.

Radiation condensation instability of compressional electromagnetic modes in magnetoplasmas containing charged dust impurities

International Nuclear Information System (INIS)

Shukla, P K; Eliasson, B; Kopp, A

2006-01-01

We report on an investigation into the radiation condensation (RC) instability of low-frequency (in comparison with the electron gyrofrequency) compressional electromagnetic waves in a magnetized plasma containing charged dust impurities. By using a two-fluid model, supplemented by the Faraday and Ampere laws, we derive a new dispersion relation. The latter is numerically analysed to examine the role of charged dust grains on the growth rate of the RC instability. The relevance of our investigation to density condensation in the next generation tokamak edges and on solar prominences is discussed

Development of high temperature, radiation hard detectors based on diamond

Energy Technology Data Exchange (ETDEWEB)

Metcalfe, Alex, E-mail: Alex.Metcalfe@brunel.ac.uk [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Fern, George R. [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Hobson, Peter R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Ireland, Terry; Salimian, Ali; Silver, Jack [Wolfson Centre for Materials Processing, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Smith, David R. [Centre for Sensors & Instrumentation, College of Engineering, Design and Physical Sciences, Brunel University London, Uxbridge UB8 3PH (United Kingdom); Lefeuvre, Gwenaelle [Micron Semiconductor Ltd., Lancing BN15 8 SJ (United Kingdom); Saenger, Richard [Schlumberger Limited, 91240 Clamart (France)

2017-02-11

Single crystal CVD diamond has many desirable properties compared to current, well developed, detector materials; exceptional radiation, chemical and physical hardness, chemical inertness, low Z (close to human tissue, good for dosimetry), wide bandgap and an intrinsic pathway to fast neutron detection through the {sup 12}C(n,α){sup 9}Be reaction. However effective exploitation of these properties requires development of a suitable metallisation scheme to give stable contacts for high temperature applications. To best utilise available processing techniques to optimise sensor response through geometry and conversion media configurations, a reliable model is required. This must assess the performance in terms of spectral response and overall efficiency as a function of detector and converter geometry. The same is also required for proper interpretation of experimental data. Sensors have been fabricated with varying metallisation schemes indented to permit high temperature operation; Present test results indicate that viable fabrication schemes for high temperature contacts have been developed and present modelling results, supported by preliminary data from partners indicate simulations provide a useful representation of response. - Highlights: • Radiation sensors using diamond as the sensitive volume have been constructed. • Functionality of these sensors with minimal degradation has been confirmed at 100 °C. • Sensitisation to thermal neutrons by addition of conversion layers has been modelled. • Modelling suggests 4× efficiency improvements from 3d converter-substrate interfaces.

Motion of a point charge in electromagnetic fields under consideration of radiation damping

International Nuclear Information System (INIS)

Stoeckel, H.

1976-01-01

The 'new equation' of Mo and Papas for the description of a point charge in an electromagnetic field under consideration of radiation damping, published in 1971, doesn't show the known disadvantages of the Lorentz-Dirac equation, taken as a basis up to now. Different forms of the Mo-Papas equation are derived and the resulting force- and power-balances are discussed. Exact and approximated solutions are derived for simple given fields, for instance for a homogeneous magnetic field, a homogeneous electric field and for the field of a resting point charge. The scattering angles are calculated for the scattering of a point charge by a homogeneous magnetic resp. electric field of finite extension. The results agree well with approximation formulas of other authors. (author)

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Science.gov (United States)

Danchenko, V.; Fang, P. H.; Brashears, S. S.

1982-01-01

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Time-resolved hard x-ray studies using third-generation synchrotron radiation sources (abstract)

International Nuclear Information System (INIS)

Mills, D.M.

1992-01-01

The third-generation, high-brilliance, synchrotron radiation sources currently under construction will usher in a new era of x-ray research in the physical, chemical, and biological sciences. One of the most exciting areas of experimentation will be the extension of static x-ray scattering and diffraction techniques to the study of transient or time-evolving systems. The high repetition rate, short-pulse duration, high-brilliance, variable spectral bandwidth, and large particle beam energies of these sources make them ideal for hard x-ray, time-resolved studies. The primary focus of this presentation will be on the novel instrumentation required for time-resolved studies such as optics which can increase the flux on the sample or disperse the x-ray beam, detectors and electronics for parallel data collection, and methods for altering the natural time structure of the radiation. This work is supported by the U.S. Department of Energy, BES-Materials Science, under Contract No. W-31-109-ENG-38

World Health Organization, radiofrequency radiation and health - a hard nut to crack (Review).

Science.gov (United States)

Hardell, Lennart

2017-08-01

In May 2011 the International Agency for Research on Cancer (IARC) evaluated cancer risks from radiofrequency (RF) radiation. Human epidemiological studies gave evidence of increased risk for glioma and acoustic neuroma. RF radiation was classified as Group 2B, a possible human carcinogen. Further epidemiological, animal and mechanistic studies have strengthened the association. In spite of this, in most countries little or nothing has been done to reduce exposure and educate people on health hazards from RF radiation. On the contrary ambient levels have increased. In 2014 the WHO launched a draft of a Monograph on RF fields and health for public comments. It turned out that five of the six members of the Core Group in charge of the draft are affiliated with International Commission on Non-Ionizing Radiation Protection (ICNIRP), an industry loyal NGO, and thus have a serious conflict of interest. Just as by ICNIRP, evaluation of non-thermal biological effects from RF radiation are dismissed as scientific evidence of adverse health effects in the Monograph. This has provoked many comments sent to the WHO. However, at a meeting on March 3, 2017 at the WHO Geneva office it was stated that the WHO has no intention to change the Core Group.

Standard hardness conversion tables for metals relationship among brinell hardness, vickers hardness, rockwell hardness, superficial hardness, knoop hardness, and scleroscope hardness

CERN Document Server

American Society for Testing and Materials. Philadelphia

2007-01-01

1.1 Conversion Table 1 presents data in the Rockwell C hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.2 Conversion Table 2 presents data in the Rockwell B hardness range on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, Knoop hardness, and Scleroscope hardness of non-austenitic steels including carbon, alloy, and tool steels in the as-forged, annealed, normalized, and quenched and tempered conditions provided that they are homogeneous. 1.3 Conversion Table 3 presents data on the relationship among Brinell hardness, Vickers hardness, Rockwell hardness, Rockwell superficial hardness, and Knoop hardness of nickel and high-nickel alloys (nickel content o...

A family of solutions with radiation reaction and retarded interactions for two charges in classical electrodynamics

International Nuclear Information System (INIS)

Rivera, R.; Villarroel, D.

2002-01-01

A family of solutions of the Lorentz-Dirac equation is constructed. It consists in the motion of two charges e 1 and e 2 of masses m 1 and m 2 in two coplanar and concentric circles of radii a and b. The charges rotate with constant angular velocity, and have an angular separation ψ. The radiation reaction forces and the retarded interactions between the charges are taken into account. The external electromagnetic field that allows the motion consists of a tangential time-independent electric field that takes a fixed value on each orbit, and a homogeneous time-independent magnetic field perpendicular to the plane of the motion. For all the solutions energy conservation is rigorously demonstrated by evaluating the energy radiated, with independence of the equation of motion, through the calculation of the instantaneous energy flux across a sphere of an infinitely large radius

Radiation hard 3D diamond sensors for vertex detectors at HL-LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00336619; Quadt, Arnulf; Grosse-Knetter, Jörn; Weingarten, Jens

Diamond is a good candidate to replace silicon as sensor material in the innermost layer of a tracking detector at HL-LHC, due to its high radiation tolerance. After particle fluences of $10^{16}\\,{\\rm protons/cm^2}$, diamond sensors are expected to achieve a higher signal to noise ratio than silicon. In order to use low grade polycrystalline diamonds as sensors, electrodes inside the diamond bulk, so called 3D electrodes, are produced. Typically, this kind of diamond material has a lower charge collection distance (CCD) than higher grade diamond, which results in a decreased signal amplitude. With 3D electrodes it is possible to achieve full charge collection even in samples with low CCDs by decoupling the spacing of the electrodes from the thickness of the diamond bulk. The electrodes are produced using a femtosecond laser, which changes the phase of the diamond material. The phase changed material is conductive and identified as nanocrystalline graphite using Raman spectroscopy. Due to a crater like struct...

Internal Charging Design Environments for the Earths Radiation Belts

Science.gov (United States)

Minow, Joseph I.; Edwards, David L.

2009-01-01

Relativistic electrons in the Earth's radiation belts are a widely recognized threat to spacecraft because they penetrate lightly shielded vehicle hulls and deep into insulating materials where they accumulate to sufficient levels to produce electrostatic discharges. Strategies for evaluating the magnitude of the relativistic electron flux environment and its potential for producing ESD events are varied. Simple "rule of thumb" estimates such as the widely used 10(exp 10) e-/sq cm fluence within 10 hour threshold for the onset of pulsing in dielectric materials provide a quick estimate of when to expect charging issues. More sophisticated strategies based on models of the trapped electron flux within the Earth s magnetic field provide time dependent estimates of electron flux along spacecraft orbits and orbit integrate electron flux. Finally, measurements of electron flux can be used to demonstrate mean and extreme relativistic electron environments. This presentation will evaluate strategies used to specify energetic electron flux and fluence environments along spacecraft trajectories in the Earth s radiation belts.

Polarization and spectral features of the hard x-ray continuum from non-thermal plasmas

International Nuclear Information System (INIS)

Hesse, M.; Platz, P.

1989-12-01

Starting from the cross-sections for the free-free radiation obtained within the relativistic Born-Elwert theory, we calculate the spectral and polarization properties of the hard X-ray continuum (hν > 50 KeV) for plasmas containing fast electrons with an anisotropic velocity distribution. The physical and geometrical quantities of our model are oriented towards the future lower-hybrid current drive (LHCD) experiments on Tore-Supra. Our parameter space covers parallel and perpendicular temperatures, the nuclear charge of the ions (mainly Z = 14 and 28), the cut-off energy of the electrons, the radial current profile and the viewing angle. Extensive calculations open on the optimum conditions for polarization measurements and also give guide-lines for the quantitative interpretation of data under real plasma conditions. A second part of this report will treat with the operational principles and expected performances of hard X-ray polarimeters

Simulation of a cascaded longitudinal space charge amplifier for coherent radiation generation

Energy Technology Data Exchange (ETDEWEB)

Halavanau, A., E-mail: aliaksei.halavanau@gmail.com [Department of Physics and Northern Illinois, Center for Accelerator & Detector Development, Northern Illinois University, DeKalb, IL 60115 (United States); Accelerator Physics Center, Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States); Piot, P. [Department of Physics and Northern Illinois, Center for Accelerator & Detector Development, Northern Illinois University, DeKalb, IL 60115 (United States); Accelerator Physics Center, Fermi National Accelerator Laboratory, Batavia, IL 60510 (United States)

2016-05-21

Longitudinal space charge (LSC) effects are generally considered as harmful in free-electron lasers as they can seed unfavorable energy modulations that can result in density modulations with associated emittance dilution. This “micro-bunching instabilities” is naturally broadband and could possibly support the generation of coherent radiation over a broad region of the spectrum. Therefore there has been an increasing interest in devising accelerator beam lines capable of controlling LSC induced density modulations. In the present paper we refine these previous investigations by combining a grid-less space charge algorithm with the popular particle-tracking program ELEGANT. This high-fidelity model of the space charge is used to benchmark conventional LSC models. We finally employ the developed model to investigate the performance of a cascaded LSC amplifier using beam parameters comparable to the ones achievable at Fermilab Accelerator Science & Technology (FAST) facility currently under commissioning at Fermilab.

Charge yield for cobalt-60 and 10-keV x-ray irradiations of MOS devices

International Nuclear Information System (INIS)

Shaneyfelt, M.R.; Fleetwood, D.M.; Schwank, J.R.; Hughes, K.L.

1991-01-01

In this paper the radiation response of MOS devices exposed to 60 Co and low-energy (∼10 keV) x-ray irradiation is evaluated as a function of electric field during exposure. Improved charge yield estimates are obtained for 60 Co irradiations at fields below 1 MV/cm by matching voltage shifts due to oxide-trap and interface-trap charge to an E -0.55 electric field dependence. Combining these improved charge yield estimates and calculated dose enhancement factors, the relative response of x-ray to 60 Co irradiations is accurately predicted for oxide electric fields from 0.03 MV/cm to 5.0 MV/cm. The ability to predict the relative response of x-ray to 60 Co irradiations should speed acceptance of x-ray testers as a hardness assurance tool

Fast charge digitizer and digital data acquisition system for measuring time varying radiation fields

International Nuclear Information System (INIS)

Lee, T.R.; Schneider, R.H.; Wyatt, J.L.

1976-01-01

A radiation measuring instrument including a fast charge digitizer and a digital data acquisition system has been developed. The fast charge digitizer includes a charge integrator connected to a conventional ionization chamber which generates an output current in proportion to ionizing radiation exposure rate. The charge integrator has an output connected to a comparator which is switched from a high state to a low state when the output of the integrator goes above the comparator threshold. The comparator output is connected to a bistable multivibrator consisting of two non-retriggerable one shot multivibrators connected in a feedback configuration. As long as the comparator output is in the low state, the bistable multivibrator generates a train of pluses which are fed back through an analog switch and a high megohm resistance to the input of the integrator. This feedback is negative and has the effect of removing the charge from the integrating capacitor, thus causing the integrator output eventually to drop below the comparator threshold. When this occurs the comparator output returns to the high state and the bistable multivibrator ceases to generate output pulses. An output terminal is connected between the bistable multivibrator and the analog switch and feeds a train of pulses proportional to the amount of charge generated by the multivibrator output voltage and the high megohm resistance to a counter connected to a random access memory device. The output pulses are counted for a predetermined time and then stored in one of the data locations of the random access memory device. The counter is then reset and a further predetermined sample period is counted. This continues until all of the locations in the random access memory device are filled and then the data is read from the random access memory device

On Influence of Neutrals on Dust Particle Charging in Complex Plasmas in the Presence of Electromagnetic Radiation

International Nuclear Information System (INIS)

Kopnin, S. I.; Morzhakova, A. A.; Popel, S. I.; Shukla, P. K.

2011-01-01

Effects associated with neutral component of complex (dusty) ionospheric plasmas which affect dust particle charging are studied. Microscopic ion currents on dust particles with taking into account ion-neutral interaction are presented. Calculations are performed both for the case of negative charges of dust particles, when the influence of Solar radiation on dust particle charging processes is negligible, and for the case of positive charges which is realized in the presence of sufficiently intensive UV or X-ray radiation. We also carry out investigation of the electron heating due to the photoelectric effect. We show that the efficiency of electron heating depends on the density of neutral component of the plasma. As result, we determine altitudes where the influence of the neutral plasma component on dust particle charging processes as well as the electron heating effect are significant and should be taken into account under consideration of the ionospheric complex plasmas. In particular, we show that the effects considered could be important for the description of noctilucent clouds, polar mesosphere summer echoes, and some other physical phenomena associated with dust particles in the ionosphere.

Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER

International Nuclear Information System (INIS)

Ito, Akira; Obara, Kenjiro; Tada, Eisuke; Morita, Yousuke; Yagi, Toshiaki; Iida, Kazuhisa; Sato, Masaru.

1997-12-01

Development of radiation-hard electric connector with ball bearing for in-vessel remote maintenance equipment of ITER (International Thermonuclear Experimental Reactor) has been conducted. Since the in-vessel remote maintenance equipment is operated under the condition of 10 6 R/h gamma ray dose rate, the electric connector has to be radiation hard for an accumulation dose of 10 10 R. In addition, the simple attachment/removal mechanism is essential for remote operation. For this, the alumina (Al203) ceramics and a ball bearing were adopted to electric insulator and plug (male) of connector, respectively. The handling tests on attachment/removal of the connector were conducted by using master slave manipulator and general purpose robot with handling tool, and as a result, the validity of the attachment/removal mechanism was verified. In the gamma ray irradiation tests, which are under way, no degradation in break down voltage (1000V 1min.) up to 10 10 R was confirmed. However insulation resistance and contact resistance between contact pin and contact socket were deteriorated in proportion to the accumulation dose. Increase of contact resistance is considered due to an erosion of contact pin. (author)

Atoms, radiation, and radiation protection

International Nuclear Information System (INIS)

Turner, J.E.

1986-01-01

This book describes basic atomic and nuclear structure, the physical processes that result in the emission of ionizing radiations, and external and internal radiation protection criteria, standards, and practices from the standpoint of their underlying physical and biological basis. The sources and properties of ionizing radiation-charged particles, photons, and neutrons-and their interactions with matter are discussed in detail. The underlying physical principles of radiation detection and systems for radiation dosimetry are presented. Topics considered include atomic physics and radiation; atomic structure and radiation; the nucleus and nuclear radiation; interaction of heavy charged particles with matter; interaction of beta particles with matter; phenomena associated with charged-particle tracks; interaction of photons with matter; neutrons, fission and criticality; methods of radiation detection; radiation dosimetry; chemical and biological effects of radiation; radiation protection criteria and standards; external radiation protection; and internal dosimetry and radiation protection

Magnetic Field Generation through Angular Momentum Exchange between Circularly Polarized Radiation and Charged Particles

CERN Document Server

Shvets, G

2002-01-01

The interaction between circularly polarized (CP) radiation and charged particles can lead to generation of magnetic field through an inverse Faraday effect. The spin of the circularly polarized electromagnetic wave can be converted into the angular momentum of the charged particles so long as there is dissipation. We demonstrate this by considering two mechanisms of angular momentum absorption relevant for laser-plasma interactions: electron-ion collisions and ionization. The precise dissipative mechanism, however, plays a role in determining the efficiency of the magnetic field generation.

Magnetic Field Generation through Angular Momentum Exchange between Circularly Polarized Radiation and Charged Particles

International Nuclear Information System (INIS)

G. Shvets; N.J. Fisch; J.-M. Rax

2002-01-01

The interaction between circularly polarized (CP) radiation and charged particles can lead to generation of magnetic field through an inverse Faraday effect. The spin of the circularly polarized electromagnetic wave can be converted into the angular momentum of the charged particles so long as there is dissipation. We demonstrate this by considering two mechanisms of angular momentum absorption relevant for laser-plasma interactions: electron-ion collisions and ionization. The precise dissipative mechanism, however, plays a role in determining the efficiency of the magnetic field generation

Spherical domain wall formed by field dynamics of Hawking radiation and spontaneous charging-up of black hole

International Nuclear Information System (INIS)

Nagatani, Yukinori

2004-01-01

We investigate the Hawking radiation in the gauge Higgs-Yukawa theory. The ballistic model is proposed as an effective description of the system. We find that a spherical domain wall around the black hole is formed by field dynamics rather than thermal phase transition. The formation is a general property of the black hole whose Hawking temperature is equal to or greater than the energy scale of the theory. The formation of the electroweak wall and that of the GUT wall are shown. We also find a phenomenon of the spontaneous charging-up of the black hole by the wall. The Hawking radiation drives a mechanism of the charge transportation into the black hole when C- and CP-violation are assumed. The mechanism can strongly transport the hyper-charge into a black hole of the electroweak scale

Synchrotron radiation: its characteristics and applications

International Nuclear Information System (INIS)

Blewett, J.P.; Chasman, R.; Green, G.K.

1977-01-01

It has been known for a century that charged particles radiate when accelerated and that relativistic electrons in the energy range between 100 MeV and several GeV and constrained to travel in circular orbits emit concentrated, intense beams with broad continuous spectra that can cover the electromagnetic spectrum from infrared through hard X-rays. Recently the possible applications of this radiation have been appreciated and electron synchrotrons and electron storage rings are now being used in many centers for studies of the properties of matter in the solid, liquid and gaseous states. A brief history is presented of ''synchrotron radiation'' as it is now called. The basic properties of this radiation are described and the world-wide distribution is indicated of facilities for its production. Particular attention is given to the proposed facility at Brookhaven which will be the first major installation to be dedicated only to the production and use of synchrotron radiation. Finally, typical examples are given of applications in the areas of radiation absorption studies, techniques based on scattering of radiation, and advances based on X-ray lithography

Equations of motion for a radiating charged particle in electromagnetic fields on curved spacetime

International Nuclear Information System (INIS)

Prasanna, A.R.

1982-11-01

In this note we present the equations of motion for a radiating charged particle in the framework of general relativity and give a formal procedure of solving the system numerically using iterations, when the motion is confined to the equatorial plane. (author)

Electromagnetic radiation of electrons in periodic structures

International Nuclear Information System (INIS)

Potylitsyn, Alexander Petrovich

2011-01-01

Periodic magnetic structures (undulators) are widely used in accelerators to generate monochromatic undulator radiation (UR) in the range from far infrared to the hard X-ray region. Another periodic crystalline structure is used to produce quasimonochromatic polarized photon beams via the coherent bremsstrahlung mechanism (CBS). Due to such characteristics as monochromaticity, polarization and adjustability, these types of radiation is of large interest for applied and basic research of accelerator-emitted radiation. The book provides a detailed overview of the fundamental principles behind electromagnetic radiation emitted from accelerated charged particles (e.g. UR, CBS, radiation of fast electrons in Laser flash fields) as well as a unified description of relatively new radiation mechanisms which attracted great interest in recent years. This are the so-called polarization radiation excited by the Coulomb field of incident particles in periodic structures, parametric X-rays, resonant transition radiation and the Smith-Purcell effect. Characteristics of such radiation sources and perspectives of their usage are discussed. The recent experimental results as well as their interpretation are presented. (orig.)

A first-principles approach to total-dose hardness assurance

International Nuclear Information System (INIS)

Fleetwood, D.M.

1995-01-01

A first-principles approach to radiation hardness assurance was described that provides the technical background to the present US and European total-dose radiation hardness assurance test methods for MOS technologies, TM 1019.4 and BS 22900. These test methods could not have been developed otherwise, as their existence depends not on a wealth of empirical comparisons of IC data from ground and space testing, but on a fundamental understanding of MOS defect growth and annealing processes. Rebound testing should become less of a problem for advanced MOS small-signal electronics technologies for systems with total dose requirements below 50--100 krad(SiO 2 ) because of trends toward much thinner gate oxides. For older technologies with thicker gate oxides and for power devices, rebound testing is unavoidable without detailed characterization studies to assess the impact of interface traps on devices response in space. The QML approach is promising for future hardened technologies. A sufficient understanding of process effects on radiation hardness has been developed that should be able to reduce testing costs in the future for hardened parts. Finally, it is hoped that the above discussions have demonstrated that the foundation for cost-effective hardness assurance tests is laid with studies of the basic mechanisms of radiation effects. Without a diligent assessment of new radiation effects mechanisms in future technologies, one cannot be assured that the present generation of radiation test standards will continue to apply

A nonlinear support vector machine model with hard penalty function based on glowworm swarm optimization for forecasting daily global solar radiation

International Nuclear Information System (INIS)

Jiang, He; Dong, Yao

2016-01-01

Highlights: • Eclat data mining algorithm is used to determine the possible predictors. • Support vector machine is converted into a ridge regularization problem. • Hard penalty selects the number of radial basis functions to simply the structure. • Glowworm swarm optimization is utilized to determine the optimal parameters. - Abstract: For a portion of the power which is generated by grid connected photovoltaic installations, an effective solar irradiation forecasting approach must be crucial to ensure the quality and the security of power grid. This paper develops and investigates a novel model to forecast 30 daily global solar radiation at four given locations of the United States. Eclat data mining algorithm is first presented to discover association rules between solar radiation and several meteorological factors laying a theoretical foundation for these correlative factors as input vectors. An effective and innovative intelligent optimization model based on nonlinear support vector machine and hard penalty function is proposed to forecast solar radiation by converting support vector machine into a regularization problem with ridge penalty, adding a hard penalty function to select the number of radial basis functions, and using glowworm swarm optimization algorithm to determine the optimal parameters of the model. In order to illustrate our validity of the proposed method, the datasets at four sites of the United States are split to into training data and test data, separately. The experiment results reveal that the proposed model delivers the best forecasting performances comparing with other competitors.

Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

International Nuclear Information System (INIS)

Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

2010-01-01

The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

Charged particle beam monitoring by means of synchrotron radiation

International Nuclear Information System (INIS)

Panasyuk, V.S.; Anevskij, S.I.

1984-01-01

Optical methods for monitoring the number of accelerated electrons and electron energy by means of beam synchrotron radiation (SR) as well as peculiarities of SR characteristics of beams with a small radius of the orbit are considered. Optical methods for charged particle beam monitoring are shown to ensure operative and precise monitoring the number of particles and particle energy. SR sources with large axial dimensions of an electron beam have specific spectral angular and polarization characteristics. If electron angular distribution at deflection from the median plane is noticeably wider than angular distribution of SR of a certain electron, relative SR characteristics of these soUrces are calculated with high accuracy

Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

CERN Document Server

Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

2001-01-01

It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

Absolute determination of radiation bursts and of proportional counters space charge effect through the influence method

International Nuclear Information System (INIS)

Rios, I.J.; Mayer, R.E.

2016-01-01

When proportional counters are employed in charge integration mode to determine the magnitude of a radiation pulse, so intense that individual detection events take place in a time too short to produce individual output pulses, mostly in pulsed neutron sources, the strong build-up of positive space charge reduces the electric multiplication factor of the proportional detector. Under such conditions the ensuing measurement underestimates the amount of radiation that interacted with the detector. If the geometric characteristics, the filling gas pressure and the voltage applied to that detector are known, it becomes possible to apply an analytical correction method to the measurement. In this article we present a method that allows to determine the absolute value of the detected radiation burst without the need to know the characteristics of the employed detectors. It is necessary to employ more than one detector, taking advantage of the Influence Method. The “Influence Method” is conceived for the absolute determination of a nuclear particle flux in the absence of known detector efficiency and without the need to register coincidences of any kind. This method exploits the influence of the presence of one detector in the count rate of another detector, when they are placed one behind the other and define statistical estimators for the absolute number of incident particles and for the efficiency (Rios and Mayer, 2015 [1,2]). Its practical implementation in the measurement of a moderated neutron flux arising from an isotopic neutron source was exemplified in (Rios and Mayer, 2016 [3]) and the extension for multiple detectors in (Rios and Mayer 2016 [4]). - Highlights: • Absolute determination of radiation burst. • Proportional counters space charge effect. • Radiation measurements on pulsed devices.

Decision feedback equalization for radiation hard data link at 5 Gbps

International Nuclear Information System (INIS)

Wallängen, V.; Garcia-Sciveres, M.

2017-01-01

The increased particle collision rate following the upgrade of the Large Hadron Collider (LHC) to an increased luminosity requires an increased readout data speed, especially for the ATLAS pixel detector, located closest to the particle interaction point. For this reason, during the Phase-II upgrade of the ATLAS experiment the output data speed of the pixel front-end chips will be increased from 160 Mbps to 5 Gbps. The increased radiation levels will require a radiation hard data transmission link to be designed to carry this data from the pixel front-end to the off-detector system where it will undergo optical conversion. We propose a receiver utilizing the concept of Decision Feedback Equalization (DFE) to be used in this link, where the number of filter taps can be determined from simulations using S-parameter data from measurements of various customized cable prototypes under characterization as candidates to function as transmission medium between the on-chip data driver and the receiver of the link. A dedicated framework has been set up in Matlab to analyze the S-parameter characteristics for the various cable prototypes and investigate the possibilities for signal recovery and maintained signal integrity using DFE, as well as pre-emphasis and different encoding schemes. The simulation results indicate that DFE could be an excellent choice for expanding the system bandwidth to reach required data speeds with minimal signal distortion.

Short term ionizing radiation impact on charge-coupled devices in radiation environment of high-intensity heavy ion accelerators

International Nuclear Information System (INIS)

Belousov, A.; Mustafin, E.; Ensinger, W.

2012-01-01

This paper presents a first approach on studies of the results of short term ionizing radiation impact on charge-coupled device (CCD) chips in conditions typical for high-intensity ion accelerator areas. Radiation effects on semiconductor devices are a topical issue for high-intensity accelerator projects. In particular it concerns CCD cameras that are widely used for beam profile monitoring and surveillance in high radiation environment. 65 CCD cameras are going to be installed in the FAIR machines. It is necessary to have good understanding of radiation effects and their contribution to measured signal in CCD chips. A phenomenon of single event upset (SEU) in CCD chips is studied in the following experiment. By SEU in CCD chip we mean an event when an ionizing particle hits the CCD matrix cell and produces electron-hole pairs that are then collected and converted to a signal that is higher than certain level defined by author. Practically, it means that a certain cell will appear as a bright pixel on the resulting image from a chip. (authors)

Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.

Energy Technology Data Exchange (ETDEWEB)

Petrosky, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); McClory, J. W. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH); Bielejec, Edward Salvador; Foster, J. C. (Air Force Institute of Technology, Wright-Patterson Air Force Base, OH)

2010-10-01

Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements were analyzed to identify voltage shifting as a result of changes to trapped charge with increasing dose of gamma, neutron, and ion radiation. In situ measurements required investigation and optimization of capacitor fabrication to include dicing, cleaning, metalization, packaging, and wire bonding. A top metal contact of 200 angstroms of titanium followed by 2800 angstroms of gold allowed for repeatable wire bonding and proper electrical response. Gamma and ion irradiations of atomic layer deposited hafnium oxide on silicon devices both resulted in a midgap voltage shift of no more than 0.2 V toward less positive voltages. This shift indicates recombination of radiation induced positive charge with negative trapped charge in the bulk oxide. Silicon ion irradiation caused interface effects in addition to oxide trap effects that resulted in a flatband voltage shift of approximately 0.6 V also toward less positive voltages. Additionally, no bias dependent voltage shifts with gamma irradiation and strong oxide capacitance room temperature annealing after ion irradiation was observed. These characteristics, in addition to the small voltage shifts observed, demonstrate the radiation hardness of hafnium oxide and its applicability for use in space systems.

Hidden charged dark matter and chiral dark radiation

Science.gov (United States)

Ko, P.; Nagata, Natsumi; Tang, Yong

2017-10-01

In the light of recent possible tensions in the Hubble constant H0 and the structure growth rate σ8 between the Planck and other measurements, we investigate a hidden-charged dark matter (DM) model where DM interacts with hidden chiral fermions, which are charged under the hidden SU(N) and U(1) gauge interactions. The symmetries in this model assure these fermions to be massless. The DM in this model, which is a Dirac fermion and singlet under the hidden SU(N), is also assumed to be charged under the U(1) gauge symmetry, through which it can interact with the chiral fermions. Below the confinement scale of SU(N), the hidden quark condensate spontaneously breaks the U(1) gauge symmetry such that there remains a discrete symmetry, which accounts for the stability of DM. This condensate also breaks a flavor symmetry in this model and Nambu-Goldstone bosons associated with this flavor symmetry appear below the confinement scale. The hidden U(1) gauge boson and hidden quarks/Nambu-Goldstone bosons are components of dark radiation (DR) above/below the confinement scale. These light fields increase the effective number of neutrinos by δNeff ≃ 0.59 above the confinement scale for N = 2, resolving the tension in the measurements of the Hubble constant by Planck and Hubble Space Telescope if the confinement scale is ≲1 eV. DM and DR continuously scatter with each other via the hidden U(1) gauge interaction, which suppresses the matter power spectrum and results in a smaller structure growth rate. The DM sector couples to the Standard Model sector through the exchange of a real singlet scalar mixing with the Higgs boson, which makes it possible to probe our model in DM direct detection experiments. Variants of this model are also discussed, which may offer alternative ways to investigate this scenario.

Radiation effects in the polycarbonate of bisphenol-A. Thermoluminescence electron spin resonance and charged particle track studies

International Nuclear Information System (INIS)

Edmonds, E.A.

1978-09-01

A detailed investigation is presented of the thermoluminescence observable above room temperature from the polycarbonate of bisphenol-A after its exposure to different radiations. A correlation study is described by which features of the complex thermoluminescence glow curve from a commercial grade of the polycarbonate of bisphenol-A are related to the etchability of charged particle damage trails and the radiogenic ESR signal. A model is presented whereby the etchability of charged particle damage trails is associated with chain scission caused by the high local dose of radiation in the vicinity of the trajectories of charged particles. Methods by which activation constants controlling the thermoluminescence glow curve can be evaluated are discussed and results are presented. It is concluded that glow peaks associated with the ESR signal or enhanced etchability are related to small-scale motions in the molecular matrix of the polycarbonate of bisphenol-A. These motions are thermally activated in accord with the simple Boltzmann relation usually incorporated into theories of thermoluminescence. Another component glow peak of the thermoluminescence glow curve is shown to be associated with the glass-rubber transition in the polycarbonate of bisphenol-A. Different features of the thermoluminescence glow curve can be related to relaxations of the polymer matrix and decomposition of the matrix. It is confirmed that the dominant bulk effect of radiation in the polycarbonate of bisphenol-A exposed to large doses of radiation is chain scission. (author)

Structural Arrangement of Water Molecules around Highly Charged Nanoparticles: Molecular Dynamics Simulation

International Nuclear Information System (INIS)

Kim, Eunae; Yeom, Min Sun

2014-01-01

Molecular dynamics simulations were performed to understand the structural arrangement of water molecules around highly charged nanoparticles under aqueous conditions. The effect of two highly charged nanoparticles on the solvation charge asymmetry has been examined. We calculated the radial distribution functions of the components of water molecules around nanoparticles which have four charge types at two different salt concentrations. Even though the distributions of water molecules surrounding a sodium ion and a chloride ion are hardly affected by the charges of nanoparticles and the salt concentrations, those around highly charged nanoparticles are strongly influenced by the charges of nanoparticles, but hardly by the charges of nanoparticles and salt concentrations. We find that the distributions of hydrogen atoms in water molecules around one highly charged nanoparticle are dependent on the magnitude of the nanoparticle charge

Radiation hardness investigation of avalanche photodiodes for the Projectile Spectator Detector readout at the Compressed Baryonic Matter experiment

Czech Academy of Sciences Publication Activity Database

Kushpil, Vasilij; Mikhaylov, Vasily; Kushpil, Svetlana; Tlustý, Pavel; Svoboda, Ondřej; Kugler, Andrej

2015-01-01

Roč. 787, JUL (2015), s. 117-120 ISSN 0168-9002 R&D Projects: GA MŠk LG12007; GA MŠk LG14004; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : avalanche photodiodes * single protons detection * radiation hardness * neutron irradiation tests * compressed Baryonic Matter experiment * Projectile Spectator Detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics , Colliders Impact factor: 1.200, year: 2015

Radiation hardness of a single crystal CVD diamond detector for MeV energy protons

Energy Technology Data Exchange (ETDEWEB)

Sato, Yuki, E-mail: y.sato@riken.jp [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Shimaoka, Takehiro; Kaneko, Junichi H. [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Murakami, Hiroyuki [The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Isobe, Mitsutaka; Osakabe, Masaki [National Institute for Fusion Science, 322-6, Oroshi-cho Toki-city, Gifu 509-5292 (Japan); Tsubota, Masakatsu [Graduate School of Engineering, Hokkaido University, N13, W8, Sapporo 060-8628 (Japan); Ochiai, Kentaro [Fusion Research and Development Directorate, Japan Atomic Energy Agency, Tokai-mura, Naka-gun, Ibaraki 319-1195 (Japan); Chayahara, Akiyoshi; Umezawa, Hitoshi; Shikata, Shinichi [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan)

2015-06-01

We have fabricated a particle detector using single crystal diamond grown by chemical vapor deposition. The irradiation dose dependence of the output pulse height from the diamond detector was measured using 3 MeV protons. The pulse height of the output signals from the diamond detector decreases as the amount of irradiation increases at count rates of 1.6–8.9 kcps because of polarization effects inside the diamond crystal. The polarization effect can be cancelled by applying a reverse bias voltage, which restores the pulse heights. Additionally, the radiation hardness performance for MeV energy protons was compared with that of a silicon surface barrier detector.

Quasicharacteristic radiation of relativistic electrons at orientation motion in lithium halides crystals along charged planes and axes

Science.gov (United States)

Maksyuta, N. V.; Vysotskii, V. I.; Efimenko, S. V.

2016-07-01

The paper deals with the investigation of the orientation motion of relativistic electrons in charged (111) planes and charged [110] axes of lithium halides ionic crystals of LiF, LiCl, LiBr and LiI. On the basis of these investigations the spectra of quasicharacteristic radiation for the electron beams with various Lorentz-factors both in planar and axial cases have been calculated numerically.

Experiments on Dust Grain Charging

Science.gov (United States)

Abbas, M. N.; Craven, P. D.; Spann, J. F.; Tankosic, D.; LeClair, A.; West, E. A.

2004-01-01

Dust particles in various astrophysical environments are charged by a variety of mechanisms generally involving collisional processes with other charged particles and photoelectric emission with UV radiation from nearby sources. The sign and the magnitude of the particle charge are determined by the competition between the charging processes by UV radiation and collisions with charged particles. Knowledge of the particle charges and equilibrium potentials is important for understanding of a number of physical processes. The charge of a dust grain is thus a fundamental parameter that influences the physics of dusty plasmas, processes in the interplanetary medium and interstellar medium, interstellar dust clouds, planetary rings, cometary and outer atmospheres of planets etc. In this paper we present some results of experiments on charging of dust grains carried out on a laboratory facility capable levitating micron size dust grains in an electrodynamic balance in simulated space environments. The charging/discharging experiments were carried out by exposing the dust grains to energetic electron beams and UV radiation. Photoelectric efficiencies and yields of micron size dust grains of SiO2, and lunar simulates obtained from NASA-JSC will be presented.

Electric field deformation in diamond sensors induced by radiation defects

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

2016-07-01

The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

CVD diamond detectors for ionizing radiation

Science.gov (United States)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

GRAVITATIONAL RADIATION

Directory of Open Access Journals (Sweden)

Metin SALTIK

1996-03-01

Full Text Available According to classical electromagnetic theory, an accelerated charge or system of charges radiates electromagnetic waves. In a radio transmitter antenna charges are accelerated along the antenna and release electromagnetic waves, which is radiated at the velocity of light in the surrounding medium. All of the radio transmitters work on this principle today. In this study an analogy is established between the principles by which accelerated charge systems markes radiation and the accelerated mass system, and the systems cousing gravitational radiation are investigated.

Low noise monolithic Si JFETs for operation in the 90-300K Range and in high radiation environments

International Nuclear Information System (INIS)

Radeka, V.; Citterio, M.; Rescia, S.; Manfredi, P.F.; Speziali, V.

1994-12-01

Development of low noise preamplifters for large ionization chambers with liquid argon (LAr) and liquid krypton (LKr) used in high energy physics experiments for measurement of energy of charged particles and photons requires die choice of a technology able to withstand the environment: a temperature of 90 K -120 K; an ionizing radiation dose of 1-2 Mrad; a neutron fluence of 0.5 -1.10 14 n/cm 2 . Silicon JFETs by virtue of their reliable noise behavior and their intrinsic radiation hardness appear to be very suitable devices for applications both at room and cryogenic temperatures. We describe the noise properties of JFET devices and a monolithic preamplifier suitable for amplification of charge and current signals

Effects of gamma radiation on hard dental tissues of albino rats: investigation by light microscopy.

Science.gov (United States)

El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; El-Zainy, Medhat

2013-08-01

The present work aims at studying the effect of gamma radiation on the hard dental tissues. Eighty adult male albino rats with weights of about 250 g were used. The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy whole-body gamma doses. The effects on hard dental tissue samples were investigated after 48 h in histological and ground sections using light microscopy. Areas of acid phosphatase activity were detected using tartrate-resistant acid phosphatase (TRAP) stains. Observation of histological sections revealed disturbance in predentin thickness and odontoblastic layer as the irradiation dose increased. In cementum, widened cementocytes lacunae were occasionally detected even with low irradiated doses. On the other hand, relatively homogenous enamel was detected with darkened areas in enamel surface at doses over than 0.5 Gy. TRAP-positive cells were detected on the surface of the dentin of irradiated groups as well as cementum surface. Minimal detectable changes were observed in ground sections.

Space charge effect measurements for a multi-channel ionization chamber used for synchrotron radiation

International Nuclear Information System (INIS)

Nasr, Amgad

2012-01-01

In vivo coronary angiography is one of the techniques used to investigate the heart diseases, by using catheter to inject a contrast medium of a given absorption coefficient into the heart vessels. Taking X-ray images produced by X-ray tube or synchrotron radiation for visualizing the blood in the coronary arteries. As the synchrotron radiation generated by the relativistic charged particle at the bending magnets, which emits high intensity photons in comparison with the X-ray tube. The intensity of the synchrotron radiation is varies with time. However for medical imaging it's necessary to measure the incoming intensity with the integrated time. The thesis work includes building a Multi-channel ionization chamber which can be filled with noble gases N 2 , Ar and Xe with controlled inner pressure up to 30 bar. This affects the better absorption efficiency in measuring the high intensity synchrotron beam fluctuation. The detector is a part of the experimental setup used in the k-edge digital subtraction angiography project, which will be used for correcting the angiography images taken by another detector at the same time. The Multi-channel ionization chamber calibration characteristics are measured using 2 kW X-ray tube with molybdenum anode with characteristic energy of 17.44 keV. According to the fast drift velocity of the electrons relative to the positive ions, the electrons will be collected faster at the anode and will induce current signals, while the positive ions is still drifting towards the cathode. However the accumulation of the slow ions inside the detector disturbs the homogeneous applied electric field and leads to what is known a space charge effect. In this work the space charge effect is measured with very high synchrotron photons intensity from EDR beam line at BESSYII. The strong attenuation in the measured amplitude signal occurs when operating the chamber in the recombination region. A plateau is observed at the amplitude signal when

Hard and soft acids and bases: structure and process.

Science.gov (United States)

Reed, James L

2012-07-05

Under investigation is the structure and process that gives rise to hard-soft behavior in simple anionic atomic bases. That for simple atomic bases the chemical hardness is expected to be the only extrinsic component of acid-base strength, has been substantiated in the current study. A thermochemically based operational scale of chemical hardness was used to identify the structure within anionic atomic bases that is responsible for chemical hardness. The base's responding electrons have been identified as the structure, and the relaxation that occurs during charge transfer has been identified as the process giving rise to hard-soft behavior. This is in contrast the commonly accepted explanations that attribute hard-soft behavior to varying degrees of electrostatic and covalent contributions to the acid-base interaction. The ability of the atomic ion's responding electrons to cause hard-soft behavior has been assessed by examining the correlation of the estimated relaxation energies of the responding electrons with the operational chemical hardness. It has been demonstrated that the responding electrons are able to give rise to hard-soft behavior in simple anionic bases.

Sustainably Sourced, Thermally Resistant, Radiation Hard Biopolymer

Science.gov (United States)

Pugel, Diane

2011-01-01

This material represents a breakthrough in the production, manufacturing, and application of thermal protection system (TPS) materials and radiation shielding, as this represents the first effort to develop a non-metallic, non-ceramic, biomaterial-based, sustainable TPS with the capability to also act as radiation shielding. Until now, the standing philosophy for radiation shielding involved carrying the shielding at liftoff or utilizing onboard water sources. This shielding material could be grown onboard and applied as needed prior to different radiation landscapes (commonly seen during missions involving gravitational assists). The material is a bioplastic material. Bioplastics are any combination of a biopolymer and a plasticizer. In this case, the biopolymer is a starch-based material and a commonly accessible plasticizer. Starch molecules are composed of two major polymers: amylase and amylopectin. The biopolymer phenolic compounds are common to the ablative thermal protection system family of materials. With similar constituents come similar chemical ablation processes, with the potential to have comparable, if not better, ablation characteristics. It can also be used as a flame-resistant barrier for commercial applications in buildings, homes, cars, and heater firewall material. The biopolymer is observed to undergo chemical transformations (oxidative and structural degradation) at radiation doses that are 1,000 times the maximum dose of an unmanned mission (10-25 Mrad), indicating that it would be a viable candidate for robust radiation shielding. As a comparison, the total integrated radiation dose for a three-year manned mission to Mars is 0.1 krad, far below the radiation limit at which starch molecules degrade. For electron radiation, the biopolymer starches show minimal deterioration when exposed to energies greater than 180 keV. This flame-resistant, thermal-insulating material is non-hazardous and may be sustainably sourced. It poses no hazardous

Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

CERN Document Server

Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

2002-01-01

It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

Features of produced flows of multiply charged ions at interaction of laser radiation with single-component solids

International Nuclear Information System (INIS)

Bedilov, M.R.; Bedilov, R.M.; Beysembaeva, H.B.; Sabitov, M.S.; Kamalova, J.O.

2006-01-01

Full text: The results of study features of formation multiply charged ions spectra of single-component solids depending on a target element composition in an interval of laser radiation power density q = 10 7 / 10 12 W/cm 2 with using of the laser multiply charged mass spectrometer [1] are given in this work. As single-component targets are used Be, B, C, Al, Ti, Fe, Co, Ni, Cu, Ag, Ta, W, Pt, Au as tablets in diameter of 10 mm and thickness of 3-5 mm. Analysis of the obtained mass-charge and energy spectra of multiply charged ions depending on a target element composition has allowed us to find features of formation spectra and escape multiply charged ions of a single-component targets. These features consist in characteristic changes: a threshold produced of ions; formation of mass-charge and energy spectra of multiply charged ions; nonlinear dependence of maximal charge number (Z max ) of ions from power density (q) of the laser; etc. Experimentally it was found that, with target atomic weight increase, threshold power of ions occurrence, nonlinearity ionization target structure, and intensity of ions, and energy spectra of ions increase. Let's note that, in case of targets Be, B, C, Al by laser radiation it is completely ionized and multiply charged ions and nuclei Be 4+ , B 5+ , C 6+ , Al 13+ are formed. The major level of ionization is attained in case of targets from Ti (Ti 17+ ) and Co (Co 18+ ). It is peculiar that structure formation and escape of multiply charged ion flows with Z max and nuclei depending on target element composition corresponds to various maximal values q of the laser. Increase of the maximal charge number of ions (atoms) observed with increase q of the laser for all investigated targets has nonlinear dependence in various levels that is especially shown beginning from q≥ 10 11 W/cm 2 . It is found that depending on target element composition multiply charged ions have a wide energy range with a maximum of allocation. With increase

Dense plasma focus PACO as a hard X-ray emitter: a study on the radiation source

OpenAIRE

Supán, L.; Guichón, S.; Milanese, Maria Magdalena; Niedbalski, Jorge Julio; Moroso, Roberto Luis; Acuña, H.; Malamud, Florencia

2016-01-01

The radiation in the X-ray range detected outside the vacuum chamber of the dense plasma focus (DPF) PACO, are produced on the anode zone. The zone of emission is studied in a shot-to-shot analysis, using pure deuterium as filling gas. We present a diagnostic method to determine the place and size of the hard X-ray source by image analysis of high density radiography plates. Fil: Supán, L.. Universidad Nacional del Centro de la Provincia de Buenos Aires. Facultad de Ciencias Exactas. Insti...

The role of molecular mobility in the transfer of charge generated by ionizing radiation in polymers

International Nuclear Information System (INIS)

Khatinov, S.A.; Edrisov, K.M.; Turdybekov, K.M.; Milinchuk, V.K.

1995-01-01

The dependence of radiation-induced electrical conductivity on the irradiation time and temperature was studied for a number of polymers. The character of variation of radiation-induced conductivity with time and temperature correlates with the physical state of a polymer. Defreezing of the segmental mobility in the region of α-relaxation transition leads to a sharp change in radiation-induced conductivity, and the appearance of peaks in the kinetic curves and break points on the Arrhenius plots in conductivity versus temperature coordinates. Molecular mobility plays a determining role in the transfer of charge carriers generated by radiation. This conclusion agrees with the data on the carrier mobility obtained by the time-of-flight methods. 24 refs., 8 figs

Accompanying of parameters of color, gloss and hardness on polymeric films coated with pigmented inks cured by different radiation doses of ultraviolet light

International Nuclear Information System (INIS)

Gonçalves Bardi, Marcelo Augusto; Brocardo Machado, Luci Diva

2012-01-01

In the search for alternatives to traditional paint systems solvent-based, the curing process of polymer coatings by ultraviolet light (UV) has been widely studied and discussed, especially because of their high content of solids and null emission of VOC. In UV-curing technology, organic solvents are replaced by reactive diluents, such as monomers. This paper aims to investigate variations on color, gloss and hardness of print inks cured by different UV radiation doses. The ratio pigment/clear coating was kept constant. The clear coating presented higher average values for König hardness than pigmented ones, indicating that UV-light absorption has been reduced by the presence of pigments. Besides, they have indicated a slight variation in function of cure degree for the studied radiation doses range. The gloss loss related to UV light exposition allows inferring that some degradation occurred at the surface of print ink films. - Highlights: ► Color, gloss and hardness are directly influenced by the different pigments. ► Clear coating analysis indicates reduction on UV-light absorption. ► Color and gloss indices indicated aeration in function of cure degree.

Double layer for hard spheres with an off-center charge

Directory of Open Access Journals (Sweden)

W. Silvestre-Alcantara

2016-02-01

Full Text Available Simulations for the density and potential profiles of the ions in the planar electrical double layer of a model electrolyte or an ionic liquid are reported. The ions of a real electrolyte or an ionic liquid are usually not spheres; in ionic liquids, the cations are molecular ions. In the past, this asymmetry has been modelled by considering spheres that are asymmetric in size and/or valence (viz., the primitive model or by dimer cations that are formed by tangentially touching spheres. In this paper we consider spherical ions that are asymmetric in size and mimic the asymmetrical shape through an off-center charge that is located away from the center of the cation spheres, while the anion charge is at the center of anion spheres. The various singlet density and potential profiles are compared to (i the dimer situation, that is, the constituent spheres of the dimer cation are tangentially tethered, and (ii the standard primitive model. The results reveal the double layer structure to be substantially impacted especially when the cation is the counterion. As well as being of intrinsic interest, this off-center charge model may be useful for theories that consider spherical models and introduce the off-center charge as a perturbation.

A statewide teleradiology system reduces radiation exposure and charges in transferred trauma patients.

Science.gov (United States)

Watson, Justin J J; Moren, Alexis; Diggs, Brian; Houser, Ben; Eastes, Lynn; Brand, Dawn; Bilyeu, Pamela; Schreiber, Martin; Kiraly, Laszlo

2016-05-01

Trauma transfer patients routinely undergo repeat imaging because of inefficiencies within the radiology system. In 2009, the virtual private network (VPN) telemedicine system was adopted throughout Oregon allowing virtual image transfer between hospitals. The startup cost was a nominal $3,000 per hospital. A retrospective review from 2007 to 2012 included 400 randomly selected adult trauma transfer patients based on a power analysis (200 pre/200 post). The primary outcome evaluated was reduction in repeat computed tomography (CT) scans. Secondary outcomes included cost savings, emergency department (ED) length of stay (LOS), and spared radiation. All data were analyzed using Mann-Whitney U and chi-square tests. P less than .05 indicated significance. Spared radiation was calculated as a weighted average per body region, and savings was calculated using charges obtained from Oregon Health and Science University radiology current procedural terminology codes. Four-hundred patients were included. Injury Severity Score, age, ED and overall LOS, mortality, trauma type, and gender were not statistically different between groups. The percentage of patients with repeat CT scans decreased after VPN implementation: CT abdomen (13.2% vs 2.8%, P < .01) and cervical spine (34.4% vs 18.2%, P < .01). Post-VPN, the total charges saved in 2012 for trauma transfer patients was $333,500, whereas the average radiation dose spared per person was 1.8 mSV. Length of stay in the ED for patients with Injury Severity Score less than 15 transferring to the ICU was decreased (P < .05). Implementation of a statewide teleradiology network resulted in fewer total repeat CT scans, significant savings, decrease in radiation exposure, and decreased LOS in the ED for patients with less complex injuries. The potential for health care savings by widespread adoption of a VPN is significant. Copyright © 2016 Elsevier Inc. All rights reserved.

Electric Charge as a Form of Imaginary Energy

Directory of Open Access Journals (Sweden)

Tianxi Zhang

2008-04-01

Full Text Available Electric charge is considered as a form of imaginary energy. With this consideration, the energy of an electrically charged particle is a complex number. The real part is proportional to the mass, while the imaginary part is proportional to the electric charge. The energy of an antiparticle is given by conjugating the energy of its corresponding particle. Newton's law of gravity and Coulomb's law of electric force are classically unified into a single expression of the interaction between the complex energies of two electrically charged particles. Interaction between real energies (or masses is the gravitational force. Interaction between imaginary energies (or electric charges is the electromagnetic force. Since radiation is also a form of real energy, there are another two types of interactions between real energies: the mass-radiation interaction and the radiation-radiation interaction. Calculating the work done by the mass-radiation interaction on a photon, we can derive the Einsteinian gravitational redshift. Calculating the work done by the radiation-radiation interaction on a photon, we can obtain a radiation redshift. This study suggests the electric charge as a form of imaginary energy, so that classically unifies the gravitational and electric forces and derives the Einsteinian gravitational redshift.

Radiation of a charge in presence of a dielectric object: aperture method

Science.gov (United States)

Tyukhtin, A. V.; Vorobev, V. V.; Belonogaya, E. S.; Galyamin, S. N.

2018-02-01

We develop an original method for calculation of radiation from a charge moving in the presence of a dielectric object. The method can be applied to objects which are larger than the wavelengths under consideration. First, the field of a charge in an infinite medium (without external boundaries) is calculated. Further the field at the external boundary of the object ("the aperture") is found using the Snell's and Fresnel's laws. At final step of this technique, we calculate the field outside the target using Stratton-Chu formulae ("aperture integrals"). Contrary to the ray-optic technique, this method is valid for the observation point with arbitrary wave parameter (including Fraunhofer area) as well as in neighborhoods of focuses and caustics. We apply the method developed to the cone with vacuum channel where the charge moves (axially symmetrical problem). As well, this problem is simulated using COMSOL Multiphysics. Comparing results of both techniques one can conclude that the aperture method can be applied even for relatively small objects which have the size of several wavelengths. It is important as well that the accuracy of calculations increases with an increase in the distance from the aperture.

Absorption and radiation of nonminimally coupled scalar field from charged BTZ black hole

Science.gov (United States)

Huang, Lu; Chen, Juhua; Wang, Yongjiu

2018-06-01

In this paper we investigate the absorption and radiation of nonminimally coupled scalar field from the charged BTZ black hole. We find the analytical expressions for the reflection coefficient, the absorption cross section and the decay rate in strong coupling case. We find that the reflection coefficient is directly governed by Hawking temperature TH, scalar wave frequency ω , Bekenstein-Hawking entropy S_{BH}, angular momentum m and coupling constant ξ.

CVD diamond detectors for ionizing radiation

CERN Document Server

Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

1999-01-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

CVD diamond detectors for ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

Hard And Soft QCD Physics In ATLAS

Directory of Open Access Journals (Sweden)

Adomeit Stefanie

2014-04-01

Full Text Available Hard and soft QCD results using proton-proton collisions recorded with the ATLAS detector at the LHC are reported. Charged-particle distributions and forward-backward correlations have been studied in low-luminosity minimum bias data taken at centre-of-mass energies of √s = 0.9, 2.36 and 7 TeV. Recent measurements on underlying event characteristics using charged-particle jets are also presented. The results are tested against various phenomenological soft QCD models implemented in Monte-Carlo generators. A summary of hard QCD measurements involving high transverse momentum jets is also given. Inclusive jet and dijet cross-sections have been measured at a centre-of-mass energy of 7 TeV and are compared to expectations based on NLO pQCD calculations corrected for non-perturbative effects as well as to NLO Monte Carlo predictions. Recent studies exploiting jet substructure techniques to identify hadronic decays of boosted massive particles are reported.

Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides

International Nuclear Information System (INIS)

Youk, G.U.; Khare, P.S.; Schrimpf, R.D.; Massengill, L.W.; Galloway, K.F.

1999-01-01

Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3-D simulations for submicron devices with trench isolation oxides. Submicron MOSFETs with shallow trench isolation were exposed to total-ionizing-dose radiation. Prior to irradiation, the devices exhibited near-ideal current-voltage characteristics, with no significant short-channel effects for as-drawn gate lengths of 0.4 microm. Following irradiation, the off-state leakage current increased significantly for total doses above about 650 krad(SiO 2 ). In addition, the irradiated devices exhibited DIBL that increased the drain current by 5--10x for a gate length of 0.4 microm (the nominal minimum gate length for this process) and much more for slightly shorter devices (0.35 microm). The increase in the off-state leakage current and the accompanying DIBL are shown to be associated with a parasitic field-effect transistor that is present at the edge of the shallow trench. Three-dimensional simulations are used to illustrate the effect. Simulations show that trapped charge at the trench sidewalls enhance the DIBL by depleting the edges of the channel. Radiation-induced charge may decrease the effectiveness of short-channel engineering

Space charge effect measurements for a multi-channel ionization chamber used for synchrotron radiation

Energy Technology Data Exchange (ETDEWEB)

Nasr, Amgad

2012-07-18

In vivo coronary angiography is one of the techniques used to investigate the heart diseases, by using catheter to inject a contrast medium of a given absorption coefficient into the heart vessels. Taking X-ray images produced by X-ray tube or synchrotron radiation for visualizing the blood in the coronary arteries. As the synchrotron radiation generated by the relativistic charged particle at the bending magnets, which emits high intensity photons in comparison with the X-ray tube. The intensity of the synchrotron radiation is varies with time. However for medical imaging it's necessary to measure the incoming intensity with the integrated time. The thesis work includes building a Multi-channel ionization chamber which can be filled with noble gases N{sub 2}, Ar and Xe with controlled inner pressure up to 30 bar. This affects the better absorption efficiency in measuring the high intensity synchrotron beam fluctuation. The detector is a part of the experimental setup used in the k-edge digital subtraction angiography project, which will be used for correcting the angiography images taken by another detector at the same time. The Multi-channel ionization chamber calibration characteristics are measured using 2 kW X-ray tube with molybdenum anode with characteristic energy of 17.44 keV. According to the fast drift velocity of the electrons relative to the positive ions, the electrons will be collected faster at the anode and will induce current signals, while the positive ions is still drifting towards the cathode. However the accumulation of the slow ions inside the detector disturbs the homogeneous applied electric field and leads to what is known a space charge effect. In this work the space charge effect is measured with very high synchrotron photons intensity from EDR beam line at BESSYII. The strong attenuation in the measured amplitude signal occurs when operating the chamber in the recombination region. A plateau is observed at the amplitude signal when

Charge-sensitive preamplifier IC for silicon calorimetry at colliders

International Nuclear Information System (INIS)

Baturitsky, M.A.; Chekhovsky, V.A.; Emel'yanchik, I.F.; Shumeiko, N.M.; Golutvin, I.A.; Zamyatin, N.I.; Dvornikov, O.V.

1995-01-01

Four versions of a fast monolithic charge-sensitive preamplifier (CSP) were designed using microwave BJT-JFET technology. The best one has a 3.5 ns rise time for input detector capacitance C d =100 pF and approximately 8 mW power dissipation for 5 V supply voltage. The ENC performance at shaping time 30 ns is 1350 e+17 e/pF for C d up to 600 pF. Crosstalk in a four-channel amplifier made in the same chip was measured to be about -46 dB for C d =100 pF. The linear output voltage swing is 0.8 V for voltage supply 5 V. The IC has revealed good radiation hardness to neutron irradiation. ((orig.))

A new computational method for simulation of charge transport in semiconductor radiation detectors

International Nuclear Information System (INIS)

Holban, I.

1993-01-01

An effective computational method for simulation of charge transport in semiconductor radiation detectors is the purpose of the present work. Basic equations for analysis include (1) Poisson's equations, (2) continuity equation for electrons and holes, (3) rate equations for deep levels, (4) current equation for electrons and holes and (5) boundary conditions. The system of equations is discretized and equidistant space and time grids is brought. The nonlinearity of the problem is overcome by using Newton-Raphson iteration scheme. Instead of solving a nonlinear boundary problem we resolve a linear matrix equation. Our computation procedure becomes very efficient using a sparse matrix. The computed program allows to calculate the charge collection efficiency and transient response for arbitrary electric fields when trapping and detrapping effects are present. The earlier literature results are reproduced. (Author)

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

Energy Technology Data Exchange (ETDEWEB)

Camargo, Fábio de [Amazônia Azul Tecnologias de Defesa S.A. (AMAZUL), São Paulo, SP (Brazil); Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: dcamargo@gmail.com, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN-CNEN/SP), Sao Paulo, SP (Brazil)

2017-07-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a {sup 60}Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with {sup 60}Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

A comparison between rad-hard float zone silicon diodes as gamma dosimeter in radiation processing

International Nuclear Information System (INIS)

Camargo, Fábio de; Gonçalves, Josemary A.C.; Bueno, Carmen C.

2017-01-01

In this work, we report on the results obtained with rad-hard Standard Float Zone (STFZ) and Diffused Oxygenated Float Zone (DOFZ) silicon diodes in radiation processing dosimetry. The dosimetric probes were designed to operate in the direct current mode, as on-line radiation dosimeter. The irradiation of the samples was performed using a 60 Co source with a dose rate of almost 2.4 kGy/h. The current response of each diode was measured as a function of the exposure time in steps from 5 kGy up to 50 kGy to achieve a total absorbed dose of 275 kGy. In this dose range it is observed a significant decrease in the photocurrent generated in both devices due to gamma radiation defects produced in their active volumes. To mitigate this effect, the samples were pre-irradiated with 60 Co gamma rays at 700 kGy. Despite of being less sensitive, these devices presented stable and reproducible current signals with a relative sensitivity decrease of about 19% within the whole range of dose studied. The dose-response curves of the pre-irradiated diodes showed quadratic behavior with correlation coefficient higher than 0.9999 for total absorbed dose up to 275 kGy. The comparison of the FZ and DOFZ responses evidenced that the latter was slightly superior to the first. However, it is important to note that all pre-irradiated diodes can be used as gamma dosimeters in radiation processing applications. (author)

Hard diffraction and small-x

International Nuclear Information System (INIS)

Anon.

1995-01-01

In the United States, phrases such as ''small-x evolution'', ''the BFKL Pomeron'', ''deep-inelastic rapiditygap events'' and ''hard-diffraction'' do not generate the same intensity of discussion amongst high-energy physicists that they do in Europe. However, for three days in the fall such discussion filled the air at Fermilab. The ''2nd Workshop on Small-x and Diffractive Physics at the Tevatron'' was a review of the rapid theoretical and experimental progress taking place in this field. Although Quantum Chromo-dynamics (QCD) has been established as the theory of strong interactions for twenty years, as yet neither perturbative high-energy calculations nor low-energy non-perturbative techniques have been successfully extended to the mixture of high energy and low transverse momenta which characterize traditional ''soft'' diffractive processes. The simplest soft diffractive process is elastic scattering. In this case it is easiest to accept that there is an exchanged ''pomeron'', which can be pictured as a virtual entity with no electric charge or strong charge (colour), perhaps like an excitation of the vacuum. The same pomeron is expected to appear in all diffractive processes. Understanding the pomeron in QCD is a fundamental theoretical and experimental challenge. In the last two or three years the ''frontier'' in this challenging area of QCD has been pushed back significantly in both theory and experiment. Progress has been achieved by studying the evolution of hard collisions to relatively smaller constituent momenta (small x) and by studying ''hard'' diffractive collisions containing simultaneous signatures of diffraction and hard perturbative processes. The hard processes have included high transverse momentum jet production, deep inelastic lepton scattering, and (most recently) W

Charged lepton flavor violation in a class of radiative neutrino mass generation models

Science.gov (United States)

Chowdhury, Talal Ahmed; Nasri, Salah

2018-04-01

We investigate the charged lepton flavor violating processes μ →e γ , μ →e e e ¯, and μ -e conversion in nuclei for a class of three-loop radiative neutrino mass generation models with electroweak multiplets of increasing order. We find that, because of certain cancellations among various one-loop diagrams which give the dipole and nondipole contributions in an effective μ e γ vertex and a Z-penguin contribution in an effective μ e Z vertex, the flavor violating processes μ →e γ and μ -e conversion in nuclei become highly suppressed compared to μ →e e e ¯ process. Therefore, the observation of such a pattern in LFV processes may reveal the radiative mechanism behind neutrino mass generation.

High performance sinter-HIP for hard metals

International Nuclear Information System (INIS)

Hongxia Chen; Deming Zhang; Yang Li; Jingping Chen

2001-01-01

The horizontal sinter-HIP equipment with great charge capacity and high performance, developed and manufactured by Central Iron and Steel Research Institute(CISRI), is mainly used for sintering and condensation of hard metals. This equipment is characterized by large hot zone, high heating speed, good temperature uniformity and fast cooling system. The equipment can provide uniform hot zone with temperature difference less than 6 o C at 1500-1600 o C and 6-10 MPa by controlling temperature, pressure and circulation of gas precisely. Using large scale horizontal sinter-HIP equipment to produce hard matals have many advantages such as stable quality, high efficiency of production, high rate of finished products and low production cost, so this equipment is a good choice for manufacturer of hard metals. (author)

Effects of Te inclusions on charge-carrier transport properties in CdZnTe radiation detectors

International Nuclear Information System (INIS)

Gu, Yaxu; Rong, Caicai; Xu, Yadong; Shen, Hao; Zha, Gangqiang; Wang, Ning; Lv, Haoyan; Li, Xinyi; Wei, Dengke; Jie, Wanqi

2015-01-01

Highlights: • This work reveals the behaviors of Te inclusion in affecting charge-carrier transport properties in CdZnTe detectors for the first time and analysis the mechanism therein. • The results show that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from the Hecht rule. • This phenomenon is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. • A modified Hecht equation is further proposed to explain the effects of high-density localized defects, say Te inclusions, on the charge collection efficiency. • We believe that this research has wide appeal to analyze the macroscopic defects and their influence on charge transport properties in semiconductor radiation detectors. - Abstract: The influence of tellurium (Te) inclusions on the charge collection efficiency in cadmium zinc telluride (CdZnTe or CZT) detectors has been investigated using ion beam induced charge (IBIC) technique. Combining the analysis of infrared transmittance image, most of the low charge collection areas in the IBIC images prove the existence of Te inclusions. To further clarify the role of Te inclusions on charge transport properties, bias dependent local IBIC scan was performed on Te inclusion related regions from 20 V to 500 V. The result shows that charge collection efficiencies in Te inclusion degraded regions experience fast ascent under low biases and slow descent at high applied biases, which deviates from Hecht rule. This behavior is attributed to the competitive influence of two mechanisms under different biases, namely charge carrier trapping due to uniformly distributed point defects and Te inclusion induced transient charge loss. A modified Hecht equation is further proposed to explain the effects of high

Influence of semiclassical plasma on the energy levels and radiative transitions in highly charged ions★

Science.gov (United States)

Hu, Hong-Wei; Chen, Zhan-Bin; Chen, Wen-Cong; Liu, Xiao-Bin; Fu, Nian; Wang, Kai

2017-11-01

Considering the quantum effects of diffraction and the collective screening effects, the potential of test charge in semiclassical plasmas is derived. It is generalized exponential screened Coulomb potential. Using the Ritz variational method incorporating this potential, the effects of semiclassical plasma on the energy levels and radiative transitions are investigated systematically, taking highly charged H-like ion as an example. The Debye plasma model is also employed for comparison purposes. Comparisons and analysis are made between these two sets of results and the differences are discussed. Contribution to the Topical Issue "Atomic and Molecular Data and their Applications", edited by Gordon W.F. Drake, Jung-Sik Yoon, Daiji Kato, Grzegorz Karwasz.

Effects of surface charges of gold nanoclusters on long-term in vivo biodistribution, toxicity, and cancer radiation therapy

Directory of Open Access Journals (Sweden)

Wang JY

2016-07-01

Full Text Available Jun-Ying Wang,1 Jie Chen,1 Jiang Yang,2 Hao Wang,1 Xiu Shen,1 Yuan-Ming Sun,1 Meili Guo,3 Xiao-Dong Zhang4 1Tianjin Key Laboratory of Radiation Medicine and Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin, 2Environment, Energy and Natural Resources Center, Department of Environmental Science and Engineering, Fudan University, Shanghai, 3Department of Physics, School of Science, Tianjin Chengjian University, 4Department of Physics, School of Science, Tianjin University, Tianjin, People’s Republic of China Abstract: Gold nanoclusters (Au NCs have exhibited great advantages in medical diagnostics and therapies due to their efficient renal clearance and high tumor uptake. The in vivo effects of the surface chemistry of Au NCs are important for the development of both nanobiological interfaces and potential clinical contrast reagents, but these properties are yet to be fully investigated. In this study, we prepared glutathione-protected Au NCs of a similar hydrodynamic size but with three different surface charges: positive, negative, and neutral. Their in vivo biodistribution, excretion, and toxicity were investigated over a 90-day period, and tumor uptake and potential application to radiation therapy were also evaluated. The results showed that the surface charge greatly influenced pharmacokinetics, particularly renal excretion and accumulation in kidney, liver, spleen, and testis. Negatively charged Au NCs displayed lower excretion and increased tumor uptake, indicating a potential for NC-based therapeutics, whereas positively charged clusters caused transient side effects on the peripheral blood system. Keywords: gold clusters, in vivo toxicity, long-term, cancer therapy

Improved charge collection of the buried p-i-n a-Si:H radiation detectors

International Nuclear Information System (INIS)

Fujieda, I.; Cho, G.; Conti, M.; Drewery, J.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Street, R.A.

1989-09-01

Charge collection in hydrogenated amorphous silicon (a-Si:H) radiation detectors is improved for high LET particle detection by adding thin intrinsic layers to the usual p-i-n structure. This buried p-i-n structure enables us to apply higher bias and the electric field is enhanced. When irradiated by 5.8 MeV α particles, the 5.7 μm thick buried p-i-n detector with bias 300V gives a signal size of 60,000 electrons, compared to about 20,000 electrons with the simple p-i-n detectors. The improved charge collection in the new structure is discussed. The capability of tailoring the field profile by doping a-Si:H opens a way to some interesting device structures. 17 refs., 7 figs

Energetic charged particles above thunderclouds

International Nuclear Information System (INIS)

Fullekrug, Martin; Diver, Declan; Pincon, Jean-Louis; Renard, Jean-Baptiste; Phelps, Alan D.R.; Bourdon, Anne; Helling, Christiane; Blanc, Elisabeth; Honary, Farideh; Kosch, Mike; Harrison, Giles; Sauvaud, Jean-Andre; Lester, Mark; Rycroft, Michael; Kosch, Mike; Horne, Richard B.; Soula, Serge; Gaffet, Stephane

2013-01-01

The French government has committed to launch the satellite TARANIS to study transient coupling processes between the Earth's atmosphere and near-Earth space. The prime objective of TARANIS is to detect energetic charged particles and hard radiation emanating from thunderclouds. The British Nobel prize winner C. T. R. Wilson predicted lightning discharges from the top of thunderclouds into space almost a century ago. However, new experiments have only recently confirmed energetic discharge processes which transfer energy from the top of thunderclouds into the upper atmosphere and near-Earth space; they are now denoted as transient luminous events, terrestrial gamma-ray flashes and relativistic electron beams. This meeting report builds on the current state of scientific knowledge on the physics of plasmas in the laboratory and naturally occurring plasmas in the Earth's atmosphere to propose areas of future research. The report specifically reflects presentations delivered by the members of a novel Franco-British collaboration during a meeting at the French Embassy in London held in November 2011. The scientific subjects of the report tackle ionization processes leading to electrical discharge processes, observations of transient luminous events, electromagnetic emissions, energetic charged particles and their impact on the Earth's atmosphere. The importance of future research in this area for science and society, and towards spacecraft protection, is emphasized. (authors)

Charged and Neutral Particles Channeling Phenomena Channeling 2008

Science.gov (United States)

Dabagov, Sultan B.; Palumbo, Luigi

2010-04-01

On the discovery of coherent Bremsstrahlung in a single crystal at the Frascati National Laboratories / C. Barbiellini, G. P. Murtas and S. B. Dabagov -- Advances in coherent Bremsstrahlung and LPM-effect studies (to the lOOth anniversary from the birth of L. D. Landau) / N. F. Shul'ga -- Spectra of radiation and created particles at intermediate energy in oriented crystal taking into account energy loss / V. N. Baier and V. M. Katkov -- The coherent Bremsstrahlung beam at MAX-lab facility / K. Fissum ... [et al.] -- Radiation from thin, structured targets (CERN NA63) / A. Dizdar -- Hard incoherent radiation in thick crystals / N. F. Shul'ga, V. V. Syshchenko and A. I. Tarnovsky -- Coherent Bremsstrahlung in periodically deformed crystals with a complex base / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Induction of coherent x-ray Bremsstrahlung in crystals under the influence of acoustic waves / A. R. Mkrtchyan and V. V. Parazian -- Coherent processes in bent single crystals / V. A. Maisheev -- Experimental and theoretical investigation of complete transfer phenomenon for media with various heat exchange coefficients / A. R. Mkrtchyan, A. E. Movsisyan and V. R. Kocharyan -- Coherent pair production in crystals / A. R. Mkrtchyan, A. A. Saharian and V. V. Parazian -- Negative particle planar and axial channeling and channeling collimation / R. A. Carrigan, Jr. -- CERN crystal-based collimation in modern hadron colliders / W. Scandale -- Studies and application of bent crystals for beam steering at 70 GeV IHEP accelerator / A. G. Afonin ... [et al.] -- Crystal collimation studies at the Tevatron (T-980) / N. V. Mokhov ... [et al.] -- Fabrication of crystals for channeling of particles in accellerators / A. Mazzolari ... [et al.] -- New possibilities to facilitate collimation of both positively and negatively charged particle beams by crystals / V. Guidi, A. Mazzolari and V. V. Tikhomirov -- Increase of probability of particle capture into the channeling

Timing performances of diamond detectors with Charge Sensitive Amplifier readout

CERN Document Server

Berretti, M; Minafra, N

2015-01-01

Research on particle detector based on synthetic diamonds has always been limited by the cost, quality and availability of the sensitive material. Moreover, the read-out electronics requires particular care due to the small number of electron/hole pairs generated by the passage of a minimum ionizing particle. However, high radiation hardness, low leakage currents and high mobility of the electron/hole pairs make them an attractive solution for the time of flight measurements and the beam monitoring of new high energy physics experiments where the severe radiation environment is a limitation for most of the technologies commonly used in particle detection. In this work we report the results on the timing performance of a 4.5x4.5 mm$^{2}$ scCVD sensor read-out using a charge sensitive amplifier. Both sensors and amplifiers have been purchased from CIVIDEC Instrumentation. The measurement have been performed on minimum ionizing pions in two beam tests at the PSI and CERN-PS facilities with two different detec...

Dosimeter charging and/or reading apparatus

International Nuclear Information System (INIS)

Fine, L.T.; Jackson, T.P.

1980-01-01

A device is disclosed for charging and/or reading a capacitor associated with an electrometer incorporated in a radiation dosimeter for the purpose of initializing or ''zeroing'', the dosimeter at the commencement of a radiation measurement cycle or reading it at any time thereafter. The dosimeter electrometer has a movable electrode the position of which is indicative of the charge remaining on the dosimeter capacitor and in turn the amount of radiation incident on the dosimeter since it was zeroed. The charging device also includes means for discharging, immediately upon conclusion of the dosimeter capacitor charging operation, stray capacitance inherent in the dosimeter by reason of its mechanical construction. The charge on the stray capacitance, if not discharged at the conclusion of the dosimeter capacitor charging operation, leaks off during the measurement cycle, introducing measurement errors. A light source and suitable switch means are provided for automatically illuminating the movable electrode of the dosimeter electrometer as an incident to charging the dosimeter capacitor to facilitate reading the initial, or ''zero'', position of the movable electrometer electrode after the dosimeter capacitor has been charged and the stray capacitance discharged. Also included is a manually actuatable switch means, which is operable independently of the aforementioned automatic switch means, to energize the lamp and facilitate reading of the dosimeter without charging

Preparation and characterisation of radiation hard PbWO4 crystal scintillator

International Nuclear Information System (INIS)

Sabharwal, S.C.; Desai, D.G.; Sangeeta; Karandikar, S.C.; Chauhan, A.K.; Sangiri, A.K.; Keshwani, K.S.; Ahuja, M.N.

1996-01-01

The selective loss of one of the crystal constituents is found to be responsible for the yellowish coloration of PbWO 4 crystals. However, using the already pulled crystals as the starting charge for the subsequent growth, colorless crystals can be grown. The crystals exhibiting excellent transmission characteristics have been grown employing a low temperature gradient, a moderate rotation rate of 15 rpm and a pull speed of 1 mm/h. The colored crystals show some radiation damage on gamma irradiation, while the colorless ones remain unaffected even for irradiation doses as high as 10 Mrad. Both the types of crystals show the presence of weak thermoluminescence (TL) emission when high irradiation doses (similar 10 Mrad) are given. Only one TL glow peak is obtained in both the cases but the peak temperatures are different. The emission centers responsible for the TL emission are found to be the ones which give rise to the scintillation emission in the crystal. (orig.)

ZZ RECOIL/B, Heavy Charged Particle Recoil Spectra Library for Radiation Damage Calculation

International Nuclear Information System (INIS)

Gabriel, T.A.; Amburgey, J.D.; Greene, N.M.

1983-01-01

1 - Description of problem or function: Format: GAM-II group structure; Number of groups: 104 neutron and Recoil-energy groups; Nuclides: Elements Included in Charged-Particle Recoil Data Base: Al, W, Ti, Pb, V, Mg, Cr, Be, Mn, C, Fe, Au, Co, Si, Ni, B-10, Cu, B-11, Zr, N, Nb, Li-6, Mo, Li-7, Ta (Data for Ta-181,Ta-182), O, Origin: ENDF/B-IV cross-section data. A heavy charged-particle recoil data base (primary knock-on atom (PKA) spectra) and an analysis program have been created to assist experimentalists in studying, evaluating, and correlating radiation-damage effects in different neutron environments. Since experimentally obtained controlled thermo-nuclear-reactor-type neutron spectra are not presently available, the data base can be extremely useful in relating currently obtainable radiation damage to that which is anticipated in future fusion devices. However, the usefulness of the data base is not restricted to just CTR needs. Most of the elements of interest to the radiation-damage community and all neutron reactions of any significance for these elements have been processed, using available ENDF/B-IV cross-section data, and are included in the data base. Calculated data such as primary recoil spectra, displacement rates, and gas-production rates, obtained with the data base, for different radiation environments are presented and compared with previous calculations. Primary neutrons with energies up to 20 MeV have been considered. The elements included in the data base are listed in Table I. All neutron reactions of significance for these elements (i.e., elastic, inelastic, (n,2n), (n,3n), (n,p), (n,sigma), (n,gamma), etc.,) which have cross sections available from ENDF/B-IV have been processed and placed in the data base. Table I - Elements Included in Charged-Particle Recoil Data Base: Al, W, Ti, Pb, V, Mg, Cr, Be, Mn, C, Fe, Au, Co, Si, Ni, 10 B, Cu, 11 B, Zr, N, Nb, 6 Li, Mo, 7 Li, Ta (Data for Ta 181 ,Ta 182 ), O. 2 - Method of solution: The neutron

Radiation effects on microelectronics

International Nuclear Information System (INIS)

Gover, J.E.

1987-01-01

Applications of radiation-hardened microelectronics in nuclear power systems include (a) light water reactor (LWR) containment building, postaccident instrumentation that can operate through the beta and gamma radiation released in a design basis loss-of-coolant accident; (b) advanced LWR instrumentation and control systems employing distributed digital integrated circuit (IC) technology to achieve a high degree of artificial intelligence and thereby reduce the probability of operator error under accident conditions; (c) instrumentation, command, control and communication systems for space nuclear power applications that must operate during the neutron and gamma-ray core leakage environments as well as the background electron, proton, and heavy charged particle environments of space; and (d) robotics systems designed for the described functions. Advanced microelectronics offer advantages in cost and reliability over alternative approaches to instrumentation and control. No semiconductor technology is hard to all classes of radiation effects phenomena. As the effects have become better understood, however, significant progress has been made in hardening IC technology. Application of hardened microelectronics to nuclear power systems has lagged military applications because of the limited market potential of hardened instruments and numerous institutional impediments

CVD diamond sensors for charged particle detection

CERN Document Server

Krammer, Manfred; Berdermann, E; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dencuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

2001-01-01

CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two- dimensional coordinate measurement. Strip detectors 2*4 cm/sup 2/ in size with a strip distance of 50 mu m were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 10/sup 15/ particles/cm/sup 2/. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies. (8 refs).

A comparison of field-only electronic portal imaging hard copies with double exposure port films in radiation therapy treatment setup confirmation to determine its clinical application in a radiotherapy center

International Nuclear Information System (INIS)

Hatherly, Kay; Smylie, Josephine; Rodger, Alan

1999-01-01

Purpose: To determine in which treatment sites field-only hard copy electronic portal images (EPI) captured during a treatment exposure could replace traditional double exposed port films in a busy radiation oncology department. Methods and Materials: The three linear accelerators in the William Buckland Radiotherapy Centre (WBRC) at the Alfred Hospital in Melbourne are each equipped with an electronic portal imaging device (EPID). These devices can be used daily on all patients where the treatment fields are within the size constraint of the cassette, for example, less than 25 x 25 cm. Port films using radiographic film in hard cassettes were previously considered the standard method of field placement verification. After the radiation therapists were trained in all program aspects of capturing, enhancing, and producing hard copies of EPIs, a study was developed to evaluate the possibility of replacing port films with EPI hard copies within the established departmental procedures. Comparison of EPI hard copy with the simulator film and the port film of the same field was carried out by the radiation oncologist specialists. Seventy-eight comparison sets were generated and grouped into seven anatomical regions for evaluation by the radiation oncologist specialist responsible for each particular region. The outcome decision was the preferred imaging option. Where no preference was stated, EPI became the modality of choice, as it increased the efficiency of work practice. Results: The results indicate that field-only EPI can be considered to be at least as clinically useful for treatment verification in the following sites: breast, chest, hip, spine, and large pelvic fields. Port films using a standard, double exposure technique were considered necessary for partial brain fields, small pelvis fields, extremities, and radical head and neck fields. Conclusion: The quality of field-only images captured using an EPID has been favorably assessed to be equivalent to, or an

Process controls for radiation hardened aluminum gate bulk silicon CMOS

International Nuclear Information System (INIS)

Gregory, B.L.

1975-01-01

Optimized dry oxides have recently yielded notable improvements in CMOS radiation-hardness. By following the proper procedures and recipes, it is now possible to produce devices which will function satisfactorily after exposure to a total ionizing dose in excess of 10 6 RADS (Si). This paper is concerned with the controls required on processing parameters once the optimized process is defined. In this process, the pre-irradiation electrical parameters must be closely controlled to insure that devices will function after irradiation. In particular, the specifications on n- and p-channel threshold voltages require tight control of fixed oxide charge, surface-state density, oxide thickness, and substrate and p-well surface concentrations. In order to achieve the above level of radiation hardness, certain processing procedures and parameters must also be closely controlled. Higher levels of cleanliness are required in the hardened process than are commonly required for commercial CMOS since, for hardened dry oxides, no impurity gettering can be employed during or after oxidation. Without such gettering, an unclean oxide is unacceptable due to bias-temperature instability. Correct pre-oxidation cleaning, residual surface damage removal, proper oxidation and annealing temperatures and times, and the correct metal sintering cycle are all important in determining device hardness. In a reproducible, hardened process, each of these processing steps must be closely controlled. (U.S.)

Effects of alpha radiation on hardness and toughness of the borosilicate glass applied to radioactive wastes immobilization

International Nuclear Information System (INIS)

Prado, Miguel Oscar; Bernasconi, Norma B. Messi de; Bevilacqua, Arturo Miguel; Arribere, Maria Angelica; Heredia, Arturo D.; Sanfilippo, Miguel

1999-01-01

Borosilicate german glass SG7 samples, obtained by frit sintering, were irradiated with different fluences of thermal neutrons in the nucleus of a nuclear reactor. The nuclear reaction 10 B(n,α) 7 Li, where the 10 B isotope is one of the natural glass components, was used to generate alpha particles throughout the glass volume. The maximum alpha disintegration per unit volume achieved was equivalent to that accumulated in a borosilicate glass with nuclear wastes after 3.8 million years. Through Vickers indentations values for microhardness, stress for 50% fracture probability (Weibull statistics) and estimation of the toughness were obtained as a function of alpha radiation dose. Two counterbalanced effects were found: that due to the disorder created by the alpha particles in the glass and that due to the annealing during irradiation (temperature below 240 deg C). Considering the alpha radiation effect, glasses tend decrease Vickers hardness, and to increase thr 50% fracture probability stress with the dose increase. (author)

Radiation-hard Optoelectronics for LHC detector upgrades.

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00375195; Newbold, Dave

A series of upgrades foreseen for the LHC over the next decade will allow the proton-proton collisions to reach the design center of mass energy of 14 TeV and increase the luminosity to five times (High Luminosity-LHC) the design luminosity by 2027. Radiation-tolerant high-speed optical data transmission links will continue to play an important role in the infrastructure of particle physics experiments over the next decade. A new generation of optoelectronics that meet the increased performance and radiation tolerance limits imposed by the increase in the intensity of the collisions at the interaction points are currently being developed. This thesis focuses on the development of a general purpose bi-directional 5 Gb/s radiation tolerant optical transceiver, the Versatile Transceiver (VTRx), for use by the LHC experiments over the next five years, and on exploring the radiation-tolerance of state-of-the art silicon photonics modulators for HL-LHC data transmission applications. The compliance of the VTRx ...

Work Hard / Play Hard

OpenAIRE

Burrows, J.; Johnson, V.; Henckel, D.

2016-01-01

Work Hard / Play Hard was a participatory performance/workshop or CPD experience hosted by interdisciplinary arts atelier WeAreCodeX, in association with AntiUniversity.org. As a socially/economically engaged arts practice, Work Hard / Play Hard challenged employees/players to get playful, or go to work. 'The game changes you, you never change the game'. Employee PLAYER A 'The faster the better.' Employer PLAYER B

Development of radiation hard microstrip detectors for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Chatterji, Sudeep [GSI, Darmstadt (Germany)

2010-07-01

Radiation damage in Silicon microstrip detectors is of the one main concerns for the development of the Silicon Tracking System (STS) in the planned Compressed Baryonic Matter (CBM) experiment at FAIR. The STS will consist of Double Sided Silicon Strip Detectors (DSSD) having pitch around 60 {mu}m, width 20 {mu}m, stereo angle of {+-}7.5{sup 0} on n and p sides with double metallization on either side making it challenging to fabricate.We are using 3-dimensional TCAD simulation tools from SYNOPSYS to carry out process (using Sentaurus Process) and device (using Sentaurus Device) simulations.We have simulated the impact of radiation damage in DSSDs by changing the effective carrier concentration (N{sub eff}) with fluence using the Hamburg model. The change in minority carrier life time has been taken into account using the Kraners model and the Perugia trap model has been used to simulate the traps. We have also extracted macroscopic parameters like Coupling Capacitance, Interstrip Capacitance (both DC and AC), Interstrip Resistance of DSSDs using Mixed Mode simulation (using SPICE with Sentaurus Device) and studied the variation of these parameters with fluence. The simulation results have been compared to the experimental results. We also simulated transients by passing a Heavy Ion through a DSSD and studied the charge collection performance.

Radiation hardness of thin Low Gain Avalanche Detectors

Science.gov (United States)

Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

2018-05-01

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Radiation damage in barium fluoride detector materials

International Nuclear Information System (INIS)

Levey, P.W.; Kierstead, J.A.; Woody, C.L.

1988-01-01

To develop radiation hard detectors, particularly for high energy physics studies, radiation damage is being studied in BaF 2 , both undoped and doped with La, Ce, Nd, Eu, Gd and Tm. Some dopants reduce radiation damage. In La doped BaF 2 they reduce the unwanted long lifetime luminescence which interferes with the short-lived fluorescence used to detect particles. Radiation induced coloring is being studied with facilities for making optical measurements before, during and after irradiation with 60 C0 gamma rays. Doses of 10 6 rad, or less, create only ionization induced charge transfer effects since lattice atom displacement damage is negligible at these doses. All crystals studied exhibit color center formation, between approximately 200 and 800 nm, during irradiation and color center decay after irradiation. Thus only measurements made during irradiation show the total absorption present in a radiation field. Both undoped and La doped BaF 2 develop damage at minimum detectable levels in the UV---which is important for particle detectors. For particle detector applications these studies must be extended to high dose irradiations with particles energetic enough to cause lattice atom displacement damage. In principle, the reduction in damage provided by dopants could apply to other applications requiring radiation damage resistant materials

Apolipoprotein E expression and behavioral toxicity of high charge, high energy (HZE) particle radiation

Science.gov (United States)

Higuchi, Yoshinori; Nelson, Gregory A.; Vazquez, Marcelo; Laskowitz, Daniel T.; Slater, James M.; Pearlstein, Robert D.

2002-01-01

Apolipoprotein E (apoE) is a lipid binding protein that plays an important role in tissue repair following brain injury. In the present studies, we have investigated whether apoE affects the behavioral toxicity of high charge, high energy (HZE) particle radiation. METHODS: Sixteen male apoE knockout (KO) mice and sixteen genetically matched wild-type (WT) C57BL mice were used in this experiment. Half of the KO and half of the WT animals were irradiated with 600 MeV/amu iron particles (2 Gy whole body). The effect of irradiation on motor coordination and stamina (Rotarod test), exploratory behavior (open field test), and spatial working and reference memory (Morris water maze) was assessed. ROTAROD TEST: Performance was adversely affected by radiation exposure in both KO and WT groups at 30 d after irradiation. By 60 d after radiation, the radiation effect was lost in WT, but still apparent in irradiated KO mice. OPEN FIELD TEST: Radiation reduced open field exploratory activity 14, 28, 56, 84, and 168 d after irradiation of KO mice, but had no effect on WT mice. MORRIS WATER MAZE: Radiation adversely affected spatial working memory in the KO mice, but had no discernible effect in the WT mice as assessed 180 d after irradiation. In contrast, irradiated WT mice showed marked impairment of spatial reference memory in comparison to non-irradiated mice, while no effect of radiation was observed in KO mice. CONCLUSIONS: These studies show that apoE expression influences the behavioral toxicity of HZE particle radiation and suggest that apoE plays a role in the repair/recovery from radiation injury of the CNS. ApoE deficiency may exacerbate the previously reported effects of HZE particle radiation in accelerating the brain aging process.

Apolipoprotein E expression and behavioral toxicity of high charge, high energy (HZE) particle radiation

International Nuclear Information System (INIS)

Higuchi, Yoshinori; Nelson, G.A.; Slater, J.M.; Pearlstein, R.D.; Laskowitz, D.T.

2002-01-01

Apolipoprotein E (apoE) is a lipid binding protein that plays an important role in tissue repair following brain injury. In the present studies, we have investigated whether apoE affects the behavioral toxicity of high charge, high energy (HZE) particle radiation. Sixteen male apoE knockout (KO) mice and sixteen genetically matched wild-type (WT) C57BL mice were used in this experiment. Half of the KO and half of the WT animals were irradiated with 600 MeV/amu iron particles (2 Gy whole body). The effect of irradiation on motor coordination and stamina (Rotarod test), exploratory behavior (open field test), and spatial working and reference memory (Morris water maze) was assessed. Rotarod test: Performance was adversely affected by radiation exposure in both KO and WT groups at 30 d after irradiation. By 60 d after radiation, the radiation effect was lost in WT, but still apparent in irradiated KO mice. Open field test: Radiation reduced open field exploratory activity 14, 28, 56, 84, and 168 d after irradiation of KO mice, but had no effect on WT mice. Morris water maze: Radiation adversely affected spatial working memory in the KO mice, but had no discernible effect in the WT mice as assessed 180 d after irradiation. In contrast, irradiated WT mice showed marked impairment of spatial reference memory in comparison to non-irradiated mice, while no effect of radiation was observed in KO mice. These studies show that apoE expression influences the behavioral toxicity of HZE particle radiation and suggest that apoE plays a role in the repair/recovery from radiation injury of the central nervous system (CNS). ApoE deficiency may exacerbate the previously reported effects of HZE particle radiation in accelerating the brain aging process. (author)

Apolipoprotein E expression and behavioral toxicity of high charge, high energy (HZE) particle radiation

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Yoshinori; Nelson, G.A.; Slater, J.M.; Pearlstein, R.D. [Loma Linda Univ., CA (United States). Medical Center; Vazquez, M. [Brookhaven National Lab., Upton, NY (United States); Laskowitz, D.T. [Duke Univ., Durham, NC (United States). Medical Center

2002-12-01

Apolipoprotein E (apoE) is a lipid binding protein that plays an important role in tissue repair following brain injury. In the present studies, we have investigated whether apoE affects the behavioral toxicity of high charge, high energy (HZE) particle radiation. Sixteen male apoE knockout (KO) mice and sixteen genetically matched wild-type (WT) C57BL mice were used in this experiment. Half of the KO and half of the WT animals were irradiated with 600 MeV/amu iron particles (2 Gy whole body). The effect of irradiation on motor coordination and stamina (Rotarod test), exploratory behavior (open field test), and spatial working and reference memory (Morris water maze) was assessed. Rotarod test: Performance was adversely affected by radiation exposure in both KO and WT groups at 30 d after irradiation. By 60 d after radiation, the radiation effect was lost in WT, but still apparent in irradiated KO mice. Open field test: Radiation reduced open field exploratory activity 14, 28, 56, 84, and 168 d after irradiation of KO mice, but had no effect on WT mice. Morris water maze: Radiation adversely affected spatial working memory in the KO mice, but had no discernible effect in the WT mice as assessed 180 d after irradiation. In contrast, irradiated WT mice showed marked impairment of spatial reference memory in comparison to non-irradiated mice, while no effect of radiation was observed in KO mice. These studies show that apoE expression influences the behavioral toxicity of HZE particle radiation and suggest that apoE plays a role in the repair/recovery from radiation injury of the central nervous system (CNS). ApoE deficiency may exacerbate the previously reported effects of HZE particle radiation in accelerating the brain aging process. (author)

Polarization effects in radiative recombination of an electron with a highly charged ion

International Nuclear Information System (INIS)

Klasnikov, A.E.; Shabaev, V.M.; Artemyev, A.N.; Kovtun, A.V.; Stoehlker, T.

2005-01-01

The radiative recombination of an unpolarized electron with a polarized highly charged H-like ion in its ground state is studied. The absolute and relative values of the electron spin-flip contribution to the cross section of the process for various scattering angles and photon polarizations are calculated. It is shown that, in addition to the forward and backward directions, there are some other scattering angles of the emitted photon, where, at a fixed linear photon polarization, the spin-flip transition gives a dominant contribution to the differential cross section

Fluctuations in induced charge introduced by Te inclusions within CdZnTe radiation detectors

International Nuclear Information System (INIS)

Bale, Derek S.

2010-01-01

Recently, homogenization theory based on a multiple-scale perturbation of the electron transport equation has been used to derive a mathematical framework for modeling the excess charge lost to Te inclusions within radiation detectors based on semi-insulating cadmium zinc telluride (CdZnTe). In that theory, the heterogeneous material is mathematically replaced by a homogenized CdZnTe crystal whose effective electron attenuation length incorporates the additional uniform electron trapping caused by the inclusions. In this paper, the homogenization theory is extended to incorporate fluctuations in the induced charge (i.e., charge collection nonuniformities) introduced by the random position and size distributions of a noncorrelated population of small (i.e, <20 μm) Te inclusions. Analysis of the effective parameters derived within the homogenized framework is used to develop a probability distribution of effective electron attenuation lengths, and therefore effective mobility-lifetime products, as a function of both the position and size distribution of Te inclusions. Example distributions are detailed for the case of an exponential size distribution at various number densities. Further, it is demonstrated that the inclusion-induced material nonuniformities derived in this paper can be numerically sampled efficiently, making them applicable to Monte Carlo device simulation of realistic CdZnTe detectors. Simulated charge induction maps and pulse-height spectra are presented and compared to recently published measurements.

Radiation hardening of smart electronics

International Nuclear Information System (INIS)

Mayo, C.W.; Cain, V.R.; Marks, K.A.; Millward, D.G.

1991-02-01

Microprocessor based ''smart'' pressure, level, and flow transmitters were tested to determine the radiation hardness of this class of electronic instrumentation for use in reactor building applications. Commercial grade Complementary Metal Oxide Semiconductor (CMOS) integrated circuits used in these transmitters were found to fail at total gamma dose levels between 2500 and 10,000 rad. This results in an unacceptably short lifetime in many reactor building radiation environments. Radiation hardened integrated circuits can, in general, provide satisfactory service life for normal reactor operations when not restricted to the extremely low power budget imposed by standard 4--20 mA two-wire instrument loops. The design of these circuits will require attention to vendor radiation hardness specifications, dose rates, process control with respect to radiation hardness factors, and non-volatile programmable memory technology. 3 refs., 2 figs

Radiation hard cryogenic silicon detectors

International Nuclear Information System (INIS)

Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

2002-01-01

It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

Nonvolatile Rad-Hard Holographic Memory

Science.gov (United States)

Chao, Tien-Hsin; Zhou, Han-Ying; Reyes, George; Dragoi, Danut; Hanna, Jay

2001-01-01

We are investigating a nonvolatile radiation-hardened (rad-hard) holographic memory technology. Recently, a compact holographic data storage (CHDS) breadboard utilizing an innovative electro-optic scanner has been built and demonstrated for high-speed holographic data storage and retrieval. The successful integration of this holographic memory breadboard has paved the way for follow-on radiation resistance test of the photorefractive (PR) crystal, Fe:LiNbO3. We have also started the investigation of using two-photon PR crystals that are doubly doped with atoms of iron group (Ti, Cr, Mn, Cu) and of rare-earth group (Nd, Tb) for nonvolatile holographic recordings.

Scintillation Detectors for Charged Particles and Photons

CERN Document Server

Lecoq, P

2011-01-01

Scintillation Detectors for Charged Particles and Photons in 'Charged Particle Detectors - Particle Detectors and Detector Systems', part of 'Landolt-Börnstein - Group I Elementary Particles, Nuclei and Atoms: Numerical Data and Functional Relationships in Science and Technology, Volume 21B1: Detectors for Particles and Radiation. Part 1: Principles and Methods'. This document is part of Part 1 'Principles and Methods' of Subvolume B 'Detectors for Particles and Radiation' of Volume 21 'Elementary Particles' of Landolt-Börnstein - Group I 'Elementary Particles, Nuclei and Atoms'. It contains the Subsection '3.1.1 Scintillation Detectors for Charged Particles and Photons' of Section '3.1 Charged Particle Detectors' of Chapter '3 Particle Detectors and Detector Systems' with the content: 3.1.1 Scintillation Detectors for Charged Particles and Photons 3.1.1.1 Basic detector principles and scintillator requirements 3.1.1.1.1 Interaction of ionizing radiation with scintillator material 3.1.1.1.2 Important scint...

A novel transition radiation detector utilizing superconducting microspheres for measuring the energy of relativistic high-energy charged particles

International Nuclear Information System (INIS)

Yuan, Luke C.L.; Chen, C.P.; Huang, C.Y.; Lee, S.C.; Waysand, G.; Perrier, P.; Limagne, D.; Jeudy, V.; Girard, T.

2000-01-01

A novel transition radiation detector (TRD) utilizing superheated superconducting microspheres of tin of 22-26, 27-32 and 32-38 μm in diameter, respectively, has been constructed which is capable of measuring accurately the energy of relativistic high-energy charged particles. The test has been conducted in a high-energy electron beam facility at the CERN PS in the energy range of 1-10 GeV showing an energy dependence of the TR X-ray photon produced and hence the value γ=E/mc 2 of the charged particle

Charge-equilibrium and radiation of low-energy cosmic rays passing through interstellar medium

Science.gov (United States)

Rule, D. W.; Omidvar, K.

1977-01-01

The charge equilibrium and radiation of an oxygen and an iron beam in the MeV per nucleon energy range, representing a typical beam of low-energy cosmic rays passing through the interstellar medium, is considered. Electron loss of the beam has been taken into account by means of the First Born approximation allowing for the target atom to remain unexcited, or to be excited to all possible states. Electron capture cross sections have been calculated by means of the scaled Oppenheimer-Brinkman-Kramers approximation, taking into account all atomic shells of the target atoms. Radiation of the beam due to electron capture into the excited states of the ion, collisional excitation and collisional inner-shell ionization of the ions has been considered. Effective X-ray production cross sections and multiplicities for the most energetic X-ray lines emitted by the Fe and O beams have been calculated.

Application of thermoluminescence dosimeter on the measurement of hard X-ray pulse energy spectrum

International Nuclear Information System (INIS)

Song Zhaohui; Wang Baohui; Wang Kuilu; Hei Dongwei; Sun Fengrong; Li Gang

2003-01-01

This paper introduces the application of thermoluminescence dosimeter (TLD) which composed by TLD-3500 reader and GR-100 M chips on the measurement of hard X-ray pulse energy spectrum. The idea using Filter Fluorescence Method (FFM) and TLD to measure hard X-ray pulse energy spectrum (from 10 keV to 100 keV) is discussed in details. Considering all the factors of the measuring surrounding, the measurement system of hard X-ray pulse has been devised. The calibration technique of absolute energy response of TLD is established. This method has been applied successfully on the radiation parameters measurement of the huge pulse radiation device-high-power pulser I. Hard X-ray pulse energy spectrum data of the pulser are acquired

Using the longitudinal space charge instability for generation of vacuum ultraviolet and x-ray radiation

Directory of Open Access Journals (Sweden)

E. A. Schneidmiller

2010-11-01

Full Text Available Longitudinal space charge (LSC driven microbunching instability in electron beam formation systems of x-ray free-electron lasers (FELs is a recently discovered effect hampering beam instrumentation and FEL operation. The instability was observed in different facilities in infrared and visible wavelength ranges. In this paper we propose to use such an instability for generation of vacuum ultraviolet (VUV and x-ray radiation. A typical longitudinal space charge amplifier (LSCA consists of few amplification cascades (drift space plus chicane with a short undulator behind the last cascade. If the amplifier starts up from the shot noise, the amplified density modulation has a wide band, on the order of unity. The bandwidth of the radiation within the central cone is given by an inverse number of undulator periods. A wavelength compression could be an attractive option for LSCA since the process is broadband, and a high compression stability is not required. LSCA can be used as a cheap addition to the existing or planned short-wavelength FELs. In particular, it can produce the second color for a pump-probe experiment. It is also possible to generate attosecond pulses in the VUV and x-ray regimes. Some user experiments can profit from a relatively large bandwidth of the radiation, and this is easy to obtain in the LSCA scheme. Finally, since the amplification mechanism is broadband and robust, LSCA can be an interesting alternative to the self-amplified spontaneous emission free-electron laser (SASE FEL in the case of using laser-plasma accelerators as drivers of light sources.

Charge sensitive amplifies. The state of arts

Energy Technology Data Exchange (ETDEWEB)

Mori, Kunishiro [Clear Pulse Co., Tokyo (Japan)

1996-07-01

In the radiation detectors, signals are essentially brought with charges produced by radiation, then it is naturally the best way to use a charge sensitive amplifier (CSA) system to extract those signals. The CSA is thought to be the best amplifier suitable to almost all the radiation detectors, if neglecting economical points of view. The CSA has been only applied to special fields like radiation detection because the concept of `charges` is not so universal against the concepts of `voltage` and `current`. The CSA, however, is low in noise and a high speed amplifier and may be applicable not only to radiation measurement but also piezoelectric devices and also bolometers. In this article, noise in the CSA, basic circuit on the CSA, concepts of `equivalent noise charge` (ENC), a method for the ENC, and importance of the `open-loop gain` in the CSA to achieve better performance of it and how to realize in a practical CSA were described. And, characteristics on a counting rate of the CSA, various circuit used in the CSA, and CSAs which are commercially available at present and special purpose CSAs were also introduced. (G.K.)

Electron dosimetry in irradiation processing with rad-hard diodes

International Nuclear Information System (INIS)

Santos, Thais Cavalheri dos

2012-01-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

A radiation-hard dual-channel 12-bit 40 MS/s ADC prototype for the ATLAS liquid argon calorimeter readout electronics upgrade at the CERN LHC

Energy Technology Data Exchange (ETDEWEB)

Kuppambatti, J. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Ban, J. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Andeen, T., E-mail: tandeen@utexas.edu [Columbia University, Nevis Laboratories, Irvington, NY (United States); Brown, R.; Carbone, R. [Columbia University, Nevis Laboratories, Irvington, NY (United States); Kinget, P. [Columbia University, Dept. of Electrical Engineering, New York, NY (United States); Brooijmans, G.; Sippach, W. [Columbia University, Nevis Laboratories, Irvington, NY (United States)

2017-05-21

The readout electronics upgrade for the ATLAS Liquid Argon Calorimeters at the CERN Large Hadron Collider requires a radiation-hard ADC. The design of a radiation-hard dual-channel 12-bit 40 MS/s pipeline ADC for this use is presented. The design consists of two pipeline A/D channels each with four Multiplying Digital-to-Analog Converters followed by 8-bit Successive-Approximation-Register analog-to-digital converters. The custom design, fabricated in a commercial 130 nm CMOS process, shows a performance of 67.9 dB SNDR at 10 MHz for a single channel at 40 MS/s, with a latency of 87.5 ns (to first bit read out), while its total power consumption is 50 mW/channel. The chip uses two power supply voltages: 1.2 and 2.5 V. The sensitivity to single event effects during irradiation is measured and determined to meet the system requirements.

Effects of gamma radiation on hard dental tissues of albino rats using scanning electron microscope - Part 1

Science.gov (United States)

El-Faramawy, Nabil; Ameen, Reham; El-Haddad, Khaled; Maghraby, Ahmed; El-Zainy, Medhat

2011-12-01

In the present study, 40 adult male albino rats were used to study the effect of gamma radiation on the hard dental tissues (enamel surface, dentinal tubules and the cementum surface). The rats were irradiated at 0.2, 0.5, 1.0, 2.0, 4.0 and 6.0 Gy gamma doses. The effects of irradiated hard dental tissues samples were investigated using a scanning electron microscope. For doses up to 0.5 Gy, there was no evidence of the existence of cracks on the enamel surface. With 1 Gy irradiation dose, cracks were clearly observed with localized erosive areas. At 2 Gy irradiation dose, the enamel showed morphological alterations as disturbed prismatic and interprismatic areas. An increase in dentinal tubules diameter and a contemporary inter-tubular dentine volume decrease were observed with higher irradiation dose. Concerning cementum, low doses,<0.5 Gy, showed surface irregularities and with increase in the irradiation dose to≥1 Gy, noticeable surface irregularities and erosive areas with decrease in Sharpey's fiber sites were observed. These observations could shed light on the hazardous effects of irradiation fields to the functioning of the human teeth.

Studies for the LHCb SciFi Tracker - Development of Modules from Scintillating Fibres and Tests of their Radiation Hardness

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00341158

The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of $\\text 250 \\mu m$, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to $83 \\%$ on average at the end of the nominal lifetime of ...

Investigation of radiative charging of dielectrics irradiated by ions

International Nuclear Information System (INIS)

Dergobuzov, K.A.; Yalovets, A.P.

1994-01-01

Within the framework of the Gusel'nikov mathematical model are fulflled numerical investigations of charging dielectrics irradiated with ions and atoms. The model accounts for dynamics of quasi-free charge carriers of each sign with account of processes of dielectrics ionization with a beam, charge recombination and charge drift in an electric fields. The effective mobility of charge carriers is determined with account for its dependence on the dose rate

Charge sharing and charge loss in a cadmium-zinc-telluride fine-pixel detector array

International Nuclear Information System (INIS)

Gaskin, J.A.; Sharma, D.P.; Ramsey, B.D.

2003-01-01

Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a cadmium-zinc-telluride multi-pixel detector is ideal for hard X-ray astrophysical observation. As part of on-going research at MSFC to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750 μm pitch), 1 mm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300 μm pitch). Future work will enable us to compare the simulated results for the finer array to measured values

Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

International Nuclear Information System (INIS)

Zupac, D.; Galloway, K.F.; Khosropour, P.; Anderson, S.R.; Schrimpf, R.D.

1993-01-01

An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets which have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of effects of oxide-trapped charge and interface-trapped charge is possible only if these two trapped charge components are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified

AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact

International Nuclear Information System (INIS)

Ruehlicke, C.; Briere, M.A.; Schneider, D.

1994-01-01

Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed

Radiation Effects and Hardening Techniques for Spacecraft Microelectronics

Science.gov (United States)

Gambles, J. W.; Maki, G. K.

2002-01-01

The natural radiation from the Van Allen belts, solar flares, and cosmic rays found outside of the protection of the earth's atmosphere can produce deleterious effects on microelectronics used in space systems. Historically civil space agencies and the commercial satellite industry have been able to utilize components produced in special radiation hardened fabrication process foundries that were developed during the 1970s and 1980s under sponsorship of the Departments of Defense (DoD) and Energy (DoE). In the post--cold war world the DoD and DoE push to advance the rad--hard processes has waned. Today the available rad--hard components lag two-plus technology node generations behind state- of-the-art commercial technologies. As a result space craft designers face a large performance gap when trying to utilize available rad--hard components. Compounding the performance gap problems, rad--hard components are becoming increasingly harder to get. Faced with the economic pitfalls associated with low demand versus the ever increasing investment required for integrated circuit manufacturing equipment most sources of rad--hard parts have simply exited this market in recent years, leaving only two domestic US suppliers of digital rad--hard components. This paper summarizes the radiation induced mechanisms that can cause digital microelectronics to fail in space, techniques that can be applied to mitigate these failure mechanisms, and ground based testing used to validate radiation hardness/tolerance. The radiation hardening techniques can be broken down into two classes, Hardness By Process (HBP) and Hardness By Design (HBD). Fortunately many HBD techniques can be applied to commercial fabrication processes providing space craft designer with radiation tolerant Application Specific Integrated Circuits (ASICs) that can bridge the performance gap between the special HBP foundries and the commercial state-of-the-art performance.

Recent progress of the RD50 Collaboration – Development of radiation tolerant tracking detectors

CERN Document Server

Moll, M

2014-01-01

The CERN RD50 Collaboration "Radiation hard semiconductor devices for high luminosity col- liders" is undertaking a massive R&D; programme across High Energy Physics (HEP) Experi- ments boundaries to develop silicon sensors with increased radiation tolerance. Highest priority is to provide concepts and prototypes of high performance silicon sensors for the High-Luminosity Large Hadron Collider (HL-LHC) Experiments at CERN and other future HEP Experiments op- erating in severe radiation environments. This paper gives an overview of the RD50 collaboration activities and describes some examples of recent developments. Emphasis is put on the charac- terization of microscopic radiation induced defects and their impact on the sensor performance, the evaluation and parametrization of electric fields inside irradiated sensors, progress in device modeling using TCAD tools, the use of p-type silicon as strip and pixel sensor material and finally the first steps towards the exploitation of impact ionization ( charge...

The application of thermoluminescence dosimeter on the measurement of hard X-ray pulse energy spectrum

International Nuclear Information System (INIS)

Song Zhaohui; Wang Baohui; Wang Kuilu; Hei Dongwei; Sun Fengrong; Li Gang

2001-01-01

This paper introduce the application of thermoluminescence dosimeter (TLD) which composed by TLD-3500 Reader and TLD-100M chips on the measurement of hard X-ray pulse energy spectrum. The idea, using Filter Fluorescence Method (FFM) and TLD to measure hard X-ray pulse energy spectrum (from 10 keV to 100 keV), is discussed in details. Considering all the factors of the measuring surroundings, the measurement system of hard X-ray pulse has been devised. The calibration technique of absolute energy response of TLD is established. This method has been applied successfully on the radiation parameters measurement of the huge pulse radiation device -high-power pulser I. Hard X-ray pulse energy spectrum data of the pulser are acquired

Development and application of cryogenic radiometry with hard X-rays

International Nuclear Information System (INIS)

Gerlach, Martin

2008-01-01

To establish cryogenic radiometry with hard X-ray radiation for photon energies of up to 60 keV, a novel type of cavity absorber had to be developed for the cryogenic radiometer SYRES I, which is deployed by the Physikalisch-Technische Bundesanstalt (PTB) as primary standard detector at the electron storage ring BESSY II. This new type of cavity absorber allows for the complete absorption of hard X-ray radiation in combination with an appropriate sensitivity and an adequate time constant for the measurement of synchrotron radiation at BESSY II. As the process of fabrication of different types of absorbers is very time-consuming, the interaction of hard X-ray radiation with different absorber materials and geometries was studied intensively by using the Monte Carlo simulation code Geant4. The accuracy of the simulations was verified comparing them to scattering experiments performed at a wavelength shifter beamline at BESSY II with a calibrated energy dispersive detector. It was shown that Geant4 describes the photo-effect, including fluorescence as well as Compton- and Rayleigh scattering, with high accuracy. The simulations and experiments resulted in a cavity absorber with a gold base 550 μm in thickness and a cylindrical shell made of copper 90 μm in thickness to reduce losses caused by fluorescence and scattered radiation. Monochromatized synchrotron radiation of high spectral purity was then used to calibrate semiconductor photodiodes, which can be used as compact and inexpensive secondary standard detectors, against a cryogenic radiometer, covering the entire photon energy range of three beamlines from 50 eV to 60 keV with relative uncertainties of less than 0.5 %. Furthermore the spatial homogeneity of the spectral responsivity, the transmittance and the linearity of the photodiodes was investigated. Through a direct comparison of the free-air ionization chamber PK100, a primary detector standard of PTB used in dosimetry, and the cryogenic radiometer SYRES

Ways of providing radiation resistance of magnetic field semiconductor sensors

CERN Document Server

Bolshakova, I A; Holyaka, R; Matkovskii, A; Moroz, A

2001-01-01

Hall magnetic field sensors resistant to hard ionizing irradiation are being developed for operation under the radiation conditions of space and in charged particle accelerators. Radiation resistance of the sensors is first determined by the properties of semiconductor materials of sensitive elements; we have used microcrystals and thin layers of III-V semiconductors. Applying complex doping by rare-earth elements and isovalent impurities in certain proportions, we have obtained magnetic field sensors resistant to irradiation by fast neutrons and gamma-quanta. Tests of their radiation resistance were carried out at IBR-2 at the Joint Institute for Nuclear Research (Dubna). When exposed to neutrons with E=0.1-13 MeV and intensity of 10 sup 1 sup 0 n cm sup - sup 2 s sup - sup 1 , the main parameter of the sensors - their sensitivity to magnetic fields - changes by no more than 0.1% up to fluences of 10 sup 1 sup 4 n cm sup - sup 2. Further improvement of radiation resistance of sensor materials is expected by ...

Induced supersolidity in a mixture of normal and hard-core bosons

International Nuclear Information System (INIS)

Mishra, Tapan; Das, B. P.; Pai, Ramesh V.

2010-01-01

We present a scenario where a supersolid is induced in one of the components of a mixture of two species bosonic atoms where there are no long-range interactions. We study a system of normal and hard-core boson mixture with only the former possessing long-range interactions. We consider three cases: the first where the total density is commensurate and the other two where it is incommensurate to the lattice. By suitable choices of the densities of normal and hard-core bosons and the interaction strengths between them, we predict that the charge density wave and the supersolid orders can be induced in the hard-core species as a result of the competing interatomic interactions.

Acidity of first- and second-row hydrides: Effects of electronegativity and hardness

International Nuclear Information System (INIS)

De Proft, F.; Langenaeker, W.; Geerlings, P.

1995-01-01

A study is made on the influence of the electronegativity and hardness of a group X on the gas-phase acidities of the first- and second-row hydrides HX. It is shown that these two density functional theory (DFT)-based global properties are sufficient for the correct description of the gas-phase acidity sequences, the group hardness being the more important factor and describing the influence of polarizability effects in the charged forms of the acid-base equilibrium. Various calculated properties effects in the charged forms of the acid-base equilibrium. Various calculated properties of the traditional quantum chemical type (Mulliken charges and the MEP) and DFT-based (local softness), associated with the neutral form of the acid, were found to contain a certain periodicity in their description of the gas-phases acidities. The gas-phase acidities (ΔH acid and ΔG acid values) were also obtained theoretically via quantum statistical thermodynamical calculations at the Hartree-Fock level with the 6-31 + G* basis set; these calculated acidities were in fair agreement with the experimental ones. 43 refs., 7 figs., 4 tabs

On the Action of the Radiation Field Generated by a Traveling-Wave Element and Its Connection to the Time Energy Uncertainty Principle, Elementary Charge and the Fine Structure Constant

Directory of Open Access Journals (Sweden)

Vernon Cooray

2017-02-01

Full Text Available Recently, we published two papers in this journal. One of the papers dealt with the action of the radiation fields generated by a traveling-wave element and the other dealt with the momentum transferred by the same radiation fields and their connection to the time energy uncertainty principle. The traveling-wave element is defined as a conductor through which a current pulse propagates with the speed of light in free space from one end of the conductor to the other without attenuation. The goal of this letter is to combine the information provided in these two papers together and make conclusive statements concerning the connection between the energy dissipated by the radiation fields, the time energy uncertainty principle and the elementary charge. As we will show here, the results presented in these two papers, when combined together, show that the time energy uncertainty principle can be applied to the classical radiation emitted by a traveling-wave element and it results in the prediction that the smallest charge associated with the current that can be detected using radiated energy as a vehicle is on the order of the elementary charge. Based on the results, an expression for the fine structure constant is obtained. This is the first time that an order of magnitude estimation of the elementary charge based on electromagnetic radiation fields is obtained. Even though the results obtained in this paper have to be considered as order of magnitude estimations, a strict interpretation of the derived equations shows that the fine structure constant or the elementary charge may change as the size or the age of the universe increases.

The Mixed Phase of Charged AdS Black Holes

Directory of Open Access Journals (Sweden)

Piyabut Burikham

2016-01-01

Full Text Available We study the mixed phase of charged AdS black hole and radiation when the total energy is fixed below the threshold to produce a stable charged black hole branch. The coexistence conditions for the charged AdS black hole and radiation are derived for the generic case when radiation particles carry charge. The phase diagram of the mixed phase is demonstrated for both fixed potential and charge ensemble. In the dual gauge picture, they correspond to the mixed phase of quark-gluon plasma (QGP and hadron gas in the fixed chemical potential and density ensemble, respectively. In the nuclei and heavy-ion collisions at intermediate energies, the mixed phase of exotic QGP and hadron gas could be produced. The mixed phase will condense and evaporate into the hadron gas as the fireball expands.

Structural and electronic properties of OsB2 : A hard metallic material

Science.gov (United States)

Chen, Z. Y.; Xiang, H. J.; Yang, Jinlong; Hou, J. G.; Zhu, Qingshi

2006-07-01

We calculate the structural and electronic properties of OsB2 using density functional theory with or without taking into account the spin-orbit (SO) interaction. Our results show that the bulk modulus with and without SO interactions are 364 and 365GPa , respectively, both are in good agreement with experiment (365-395GPa) . The evidence of covalent bonding of Os-B, which plays an important role to form a hard material, is indicated both in charge density, atoms in molecules analysis, and density of states analysis. The good metallicity and hardness of OsB2 might suggest its potential application as hard conductors.

Radiative corrections to the charged pion-pair production process {pi}{sup -}{gamma} {yields} {pi}{sup +}{pi}{sup -}{pi}{sup -} at low energies

Energy Technology Data Exchange (ETDEWEB)

Kaiser, N.; Petschauer, S. [Technische Universitaet Muenchen, Physik-Department T39, Garching (Germany)

2013-12-15

We calculate the one-photon loop radiative corrections to the charged pion-pair production process {pi}{sup -}{gamma} {yields} {pi}{sup +}{pi}{sup -}{pi}{sup -}. In the low-energy region this reaction is governed by the chiral pion-pion interaction. The pertinent set of 42 irreducible photon-loop diagrams is calculated by using the package FeynCalc. Electromagnetic counterterms with two independent low-energy constants k{sub 1} and k{sub 2} are included in order to remove the ultraviolet divergences generated by the photon loops. Infrared finiteness of the virtual radiative corrections is achieved by including soft photon radiation below an energy cut-off {Lambda}. The purely electromagnetic interaction of the charged pions mediated by one-photon exchange is also taken into account. The radiative corrections to the total cross section (in the isospin limit) vary between +10% close to threshold and about -1% at a center-of-mass energy of 7m{sub {pi}}. The largest contribution comes from the simple one-photon exchange. Radiative corrections to the {pi}{sup +}{pi}{sup -} and {pi}{sup -}{pi}{sup -} mass spectra are studied as well. The Coulomb singularity of the final-state interaction produces a kink in the dipion mass spectra. The virtual radiative corrections to elastic {pi}{sup -}{pi}{sup -} scattering are derived additionally. (orig.)

PARMELA-B A new version of PARMELA with coherent synchrotron radiation effects and a finite difference space charge routine

CERN Document Server

Koltenbah, B E C; Greegor, R B; Dowell, D H

2002-01-01

Recent interest in advanced laser light sources has stimulated development of accelerator systems of intermediate beam energy, 100-200 MeV, and high charge, 1-10 nC, for high power FEL applications and high energy, 1-2 GeV, high charge, SASE-FEL applications. The current generation of beam transport codes which were developed for high-energy, low-charge beams with low self-fields are inadequate to address this energy and charge regime, and better computational tools are required to accurately calculate self-fields. To that end, we have developed a new version of PARMELA, named PARMELA_B and written in Fortran 95, which includes a coherent synchrotron radiation (CSR) routine and an improved, generalized space charge (SC) routine. An electron bunch is simulated by a collection of macro-particles, which traverses a series of beam line elements. At each time step through the calculation, the momentum of each particle is updated due to the presence of external and self- fields. The self-fields are due to CSR and S...

Space-charge effects in high-energy photoemission

Energy Technology Data Exchange (ETDEWEB)

Verna, Adriano, E-mail: adriano.verna@uniroma3.it [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); CNISM Unità di Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Greco, Giorgia [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Lollobrigida, Valerio [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Scuola Dottorale in Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); Offi, Francesco; Stefani, Giovanni [Dipartimento di Scienze, Università degli Studi Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy); CNISM Unità di Roma Tre, Via della Vasca Navale 84, I-00146 Roma (Italy)

2016-05-15

Highlights: • N-body simulations of interacting photoelectrons in hard X-ray experiments. • Secondary electrons have a pivotal role in determining the energy broadening. • Space charge has negligible effects on the photoelectron momentum distribution. • A simple model provides the characteristic time for energy-broadening mechanism. • The feasibility of time-resolved high-energy experiments with FELs is discussed. - Abstract: Pump-and-probe photoelectron spectroscopy (PES) with femtosecond pulsed sources opens new perspectives in the investigation of the ultrafast dynamics of physical and chemical processes at the surfaces and interfaces of solids. Nevertheless, for very intense photon pulses a large number of photoelectrons are simultaneously emitted and their mutual Coulomb repulsion is sufficiently strong to significantly modify their trajectory and kinetic energy. This phenomenon, referred as space-charge effect, determines a broadening and shift in energy for the typical PES structures and a dramatic loss of energy resolution. In this article we examine the effects of space charge in PES with a particular focus on time-resolved hard X-ray (∼10 keV) experiments. The trajectory of the electrons photoemitted from pure Cu in a hard X-ray PES experiment has been reproduced through N-body simulations and the broadening of the photoemission core-level peaks has been monitored as a function of various parameters (photons per pulse, linear dimension of the photon spot, photon energy). The energy broadening results directly proportional to the number N of electrons emitted per pulse (mainly represented by secondary electrons) and inversely proportional to the linear dimension a of the photon spot on the sample surface, in agreement with the literature data about ultraviolet and soft X-ray experiments. The evolution in time of the energy broadening during the flight of the photoelectrons is also studied. Despite its detrimental consequences on the energy

Vector meson dominance and pointlike coupling of the photon in soft and hard processes

International Nuclear Information System (INIS)

Paul, E.

1990-05-01

Recent experimental results on photoproduction of hadrons probe the nature of the interacting photon over a wide kinematical range from soft to hard processes. Single inclusive spectra and energy flows of the final state charged particles are well described by assuming that photon production data are built up by an incoherent superposition of a soft Vector-Meson-Dominance component and a hard pointlike photon component. (orig.)

Process for altering the colour of hard stones

International Nuclear Information System (INIS)

Samoilovich, M.I.; Shaposhniko, A.A.; Turinge, A.P.; Vakhidov, S.A.; Nurullaev, Ergash.

1981-01-01

Process for altering the colour of hard stones and articles made with such stones, used in the jewellery trade, consisting in treating the hard stones in a neutron reactor and gamma particles accompanying them, whereby the treatment is performed with fast neutrons of at least 0.5 MeV, at integral doses of 5x10 15 to 1x10 18 neutrons/cm 2 , and gamma radiations, at integral doses of 5x10 6 to 1x10 9 R, at temperatures under 300 0 C [fr

Radiation detection system

Science.gov (United States)

Whited, R.C.

A system for obtaining improved resolution in relatively thick semiconductor radiation detectors, such as HgI/sub 2/, which exhibit significant hole trapping. Two amplifiers are used: the first measures the charge collected and the second the contribution of the electrons to the charge collected. The outputs of the two amplifiers are utilized to unfold the total charge generated within the detector in response to a radiation event.

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

International Nuclear Information System (INIS)

Chen, Pei-Yun; Chen, C.C.; Harmon, Julie P.; Lee, Sanboh

2014-01-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime

The effect of gamma radiation on hardness evolution in high density polyethylene at elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Chen, Pei-Yun [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China); Chen, C.C. [Institute of Nuclear Energy Research, Longtan, Taoyuan 325, Taiwan (China); Harmon, Julie P. [Department of Chemistry, University of South Florida, Tampa, FL 33620 (United States); Lee, Sanboh, E-mail: sblee@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

2014-08-01

This research focuses on characterizing hardness evolution in irradiated high density polyethylene (HDPE) at elevated temperatures. Hardness increases with increasing gamma ray dose, annealing temperature and annealing time. The hardness change is attributed to the variation of defects in microstructure and molecular structure. The kinetics of defects that control the hardness are assumed to follow the first order structure relaxation. The experimental data are in good agreement with the predicted model. The rate constant follows the Arrhenius equation, and the corresponding activation energy decreases with increasing dose. The defects that control hardness in post-annealed HDPE increase with increasing dose and annealing temperature. The structure relaxation of HDPE has a lower energy of mixing in crystalline regions than in amorphous regions. Further, the energy of mixing for defects that influence hardness in HDPE is lower than those observed in polycarbonate (PC), poly(methyl methacrylate) (PMMA) and poly (hydroxyethyl methacrylate) (HEMA). This is due to the fact that polyethylene is a semi-crystalline material, while PC, PMMA and PHEMA are amorphous. - Highlights: • Hardness of HDPE increases with increasing gamma ray dose, annealing time and temperature. • The hardness change arises from defects in microstructure and molecular structure. • Defects affecting hardness follow a kinetics of structure relaxation. • The structure relaxation has a low energy of mixing in crystalline regime.

LHCb: The Performance and Radiation Hardness of the Outer Tracker Detector for LHCb

CERN Multimedia

Färber, C

2012-01-01

The LHC bexperiment is designed to study B-decays at the LHC. It is crucial to accurately and efficiently detect the charged decay particles in the high-density particle environment of the LHC. For this, the Outer Tracker (OT) has been constructed, consisting of 53,760 straw tubes, covering in total an area of 360 m2 of double layers. At the time of the conference, the detector will have operated under nominal LHC conditions for a period of about 2 years, corresponding to an integrated luminosity of approximately 2.5 fb$^{-1}$ . The performance of the detector will be discussed in terms of high voltage stability, noise rate, single hit efficiency and resolution. Finally, first results on the radiation tolerance of this sensitive gas detector will be shown, after having received a total dose corresponding to about 100 mC/cm in the hottest region.

Towards Radiation Hard Sensor Materials for the CMS Tracker Upgrade

CERN Document Server

Steinbrueck, Georg

2012-01-01

Many measurements are described in literature, performed on a variety of silicon materials and technologies, but they are often hard to compare, because they were done under different conditions. To systematically compare the prope...

Studying Radiation Tolerant ICs for LHC

CERN Multimedia

Faccio, F; Snoeys, W; Campbell, M; Casas-cubillos, J; Gomes, P

2002-01-01

%title\\\\ \\\\In the recent years, intensive work has been carried out on the development of custom ICs for the readout electronics for LHC experiments. As far as radiation hardness is concerned, attention has been focussed on high total dose applications, mainly for the tracker systems. The dose foreseen in this inner region is estimated to be higher than 1~Mrad/year. In the framework of R&D projects (RD-9 and RD-20) and in the ATLAS and CMS experiments, the study of different radiation hard processes has been pursued and good contacts with the manufacturers have been established. The results of these studies have been discussed during the Microelectronics User Group (MUG) rad-hard meetings, and now some HEP groups are working to develop radiation hard ICs for the LHC experiments on some of the available rad-hard processes.\\\\ \\\\In addition, a lot of the standard commercial electronic components and ASICs which are planned to be installed near the LHC machine and in the detectors will receive total doses in ...

Standard Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

CERN Document Server

American Society for Testing and Materials. Philadelphia

2010-01-01

1.1 This practice covers recommended procedures for the use of dosimeters, such as thermoluminescent dosimeters (TLD's), to determine the absorbed dose in a region of interest within an electronic device irradiated using a Co-60 source. Co-60 sources are commonly used for the absorbed dose testing of silicon electronic devices. Note 1—This absorbed-dose testing is sometimes called “total dose testing” to distinguish it from “dose rate testing.” Note 2—The effects of ionizing radiation on some types of electronic devices may depend on both the absorbed dose and the absorbed dose rate; that is, the effects may be different if the device is irradiated to the same absorbed-dose level at different absorbed-dose rates. Absorbed-dose rate effects are not covered in this practice but should be considered in radiation hardness testing. 1.2 The principal potential error for the measurement of absorbed dose in electronic devices arises from non-equilibrium energy deposition effects in the vicinity o...

Rad-hard electronics study for SSC detectors

International Nuclear Information System (INIS)

Ekenberg, T.; Dawson, J.; Stevens, A.; Haberichter, W.

1991-01-01

The radiation environment in a SSC detector operating at a luminosity of 10 33 cm -2 s -1 will put stringent requirements on radiation hardness of the electronics. Over the expected 10 year life-time of a large detector, ionizing radiation doses of up to 20 MRad and neutron fluences of 10 16 neutrons/cm 2 are projected. At a luminosity of 10 34 cm -2 s -1 even higher total doses are expected. the effect of this environment have been simulated by exposing CMOS/bulk and CMOS/SOS devices from monolithic processes to neutrons and ionizing radiation. leakage currents, noise variations, and DC characteristics have been measured before and after exposure in order to evaluate the effects of the irradiations. As expected the device characteristics remained virtually unchanged by neutron irradiation, while ionizing radiation caused moderate degradation of performance. 5 refs., 6 figs

Quark-number susceptibility, thermodynamic sum rule, and the hard thermal loop approximation

International Nuclear Information System (INIS)

Chakraborty, Purnendu; Mustafa, Munshi G.; Thoma, Markus H.

2003-01-01

The quark number susceptibility, associated with the conserved quark number density, is closely related to the baryon and charge fluctuations in the quark-gluon plasma, which might serve as signature for the quark-gluon plasma formation in ultrarelativistic heavy-ion collisions. In addition to QCD lattice simulations, the quark number susceptibility has been calculated recently using a resummed perturbation theory (hard thermal loop resummation). In the present work we show, based on general arguments, that the computation of this quantity neglecting hard thermal loop vertices contradicts the Ward identity and violates the thermodynamic sum rule following from quark number conservation. We further show that the hard thermal loop perturbation theory is consistent with the thermodynamic sum rule

Methodology and Data Sources for Assessing Extreme Charging Events within the Earth's Magnetosphere

Science.gov (United States)

Parker, L. N.; Minow, J. I.; Talaat, E. R.

2016-12-01

Spacecraft surface and internal charging is a potential threat to space technologies because electrostatic discharges on, or within, charged spacecraft materials can result in a number of adverse impacts to spacecraft systems. The Space Weather Action Plan (SWAP) ionizing radiation benchmark team recognized that spacecraft charging will need to be considered to complete the ionizing radiation benchmarks in order to evaluate the threat of charging to critical space infrastructure operating within the near-Earth ionizing radiation environments. However, the team chose to defer work on the lower energy charging environments and focus the initial benchmark efforts on the higher energy galactic cosmic ray, solar energetic particle, and trapped radiation belt particle environments of concern for radiation dose and single event effects in humans and hardware. Therefore, an initial set of 1 in 100 year spacecraft charging environment benchmarks remains to be defined to meet the SWAP goals. This presentation will discuss the available data sources and a methodology to assess the 1 in 100 year extreme space weather events that drive surface and internal charging threats to spacecraft. Environments to be considered are the hot plasmas in the outer magnetosphere during geomagnetic storms, relativistic electrons in the outer radiation belt, and energetic auroral electrons in low Earth orbit at high latitudes.

Active Radiation Detectors for Use in Space Beyond Low Earth Orbit: Spatial and Energy Resolution Requirements and Methods for Heavy Ion Charge Classification

Science.gov (United States)

McBeth, Rafe A.

Space radiation exposure to astronauts will need to be carefully monitored on future missions beyond low earth orbit. NASA has proposed an updated radiation risk framework that takes into account a significant amount of radiobiological and heavy ion track structure information. These models require active radiation detection systems to measure the energy and ion charge Z. However, current radiation detection systems cannot meet these demands. The aim of this study was to investigate several topics that will help next generation detection systems meet the NASA objectives. Specifically, this work investigates the required spatial resolution to avoid coincident events in a detector, the effects of energy straggling and conversion of dose from silicon to water, and methods for ion identification (Z) using machine learning. The main results of this dissertation are as follows: 1. Spatial resolution on the order of 0.1 cm is required for active space radiation detectors to have high confidence in identifying individual particles, i.e., to eliminate coincident events. 2. Energy resolution of a detector system will be limited by energy straggling effects and the conversion of dose in silicon to dose in biological tissue (water). 3. Machine learning methods show strong promise for identification of ion charge (Z) with simple detector designs.

PARMELA sub B a new version of PARMELA with coherent synchrotron radiation effects and a finite difference space charge routine

CERN Document Server

Koltenbah, B E C; Greegor, R B; Dowell, D H

2002-01-01

Recent interest in advanced laser light sources has stimulated development of accelerator systems of intermediate beam energy, 100-200 MeV, and high charge, 1-10 nC, for high power FEL applications and high energy, 1-2 GeV, high charge, SASE-FEL applications. The current generation of beam transport codes which were developed for high-energy, low-charge beams with low self-fields are inadequate to address this energy and charge regime, and better computational tools are required to accurately calculate self-fields. To that end, we have developed a new version of PARMELA, named PARMELA sub B and written in Fortran 95, which includes a coherent synchrotron radiation (CSR) routine and an improved, generalized space charge (SC) routine. An electron bunch is simulated by a collection of macro-particles, which traverses a series of beam line elements. At each time step through the calculation, the momentum of each particle is updated due to the presence of external and self-fields. The self-fields are due to CSR an...

Spatial distribution of the X- and γ- rays induced energy deposition on semi-insulating GaAs:Cr based pixel radiation detector

International Nuclear Information System (INIS)

Meneses Gonzalez, Annie; Leyva Fabelo, Antonio; Pinnera Hernandez, Ibrahin; Cruz Inclan, Carlos M.; Abreu Alfonso, Yamiel; Chelkov, Georgy; Zhemchugov, Alexey

2015-01-01

Radiation detectors based on Cr compensated GaAs are characterized by high resistivity and good electron transport properties. These characteristics, its high atomic number and good radiation hardness, make GaAs:Cr a promising semiconductor detector within a wide photon energy range. The excellent imaging performance of these detectors for medical and other several applications are already reported in the literature. In this study, the spatial distributions of photon radiation energy deposition on a GaAs:Cr pixel detector with the real device dimensions (900 μm thick, pixels of 45x45 μm 2 and pitch of 55 μm) are presented. The charge carrier distribution profiles generated by the incident photons was additionally determined and discussed. Using the calculated weighting potential for the detector was possible to estimate the percent of charge carriers that shall contribute to the signal generated in the device electrodes. All the calculations were made for the typical photon energies of 241 Am and the energy corresponding to the K α1 characteristic lines of Mo. The MCNPX code system and ARCHIMEDES program were used for mathematical modeling of radiation transport in matter and for semiconductor device simulations respectively. (Author)

Direct evidence for radiative charge transfer after inner-shell excitation and ionization of large clusters

Science.gov (United States)

Hans, Andreas; Stumpf, Vasili; Holzapfel, Xaver; Wiegandt, Florian; Schmidt, Philipp; Ozga, Christian; Reiß, Philipp; Ben Ltaief, Ltaief; Küstner-Wetekam, Catmarna; Jahnke, Till; Ehresmann, Arno; Demekhin, Philipp V.; Gokhberg, Kirill; Knie, André

2018-01-01

We directly observe radiative charge transfer (RCT) in Ne clusters by dispersed vacuum-ultraviolet photon detection. The doubly ionized Ne2+-{{{N}}{{e}}}n-1 initial states of RCT are populated after resonant 1s-3p photoexcitation or 1s photoionization of Ne n clusters with ≈ 2800. These states relax further producing Ne+-Ne+-{{{N}}{{e}}}n-2 final states, and the RCT photon is emitted. Ab initio calculations assign the observed RCT signal to the{}{{{N}}{{e}}}2+(2{{{p}}}-2{[}1{{D}}]){--}{{{N}}{{e}}}n-1 initial state, while transitions from other possible initial states are proposed to be quenched by competing relaxation processes. The present results are in agreement with the commonly discussed scenario, where the doubly ionized atom in a noble gas cluster forms a dimer which dissipates its vibrational energy on a picosecond timescale. Our study complements the picture of the RCT process in weakly bound clusters, providing information which is inaccessible by charged particle detection techniques.

Excitation of hybridized Dirac plasmon polaritons and transition radiation in multi-layer graphene traversed by a fast charged particle

Science.gov (United States)

Akbari, Kamran; Mišković, Zoran L.; Segui, Silvina; Gervasoni, Juana L.; Arista, Néstor R.

2018-06-01

We analyze the energy loss channels for a fast charged particle traversing a multi-layer graphene (MLG) structure with N layers under normal incidence. Focusing on a terahertz (THz) range of frequencies, and assuming equally doped graphene layers with a large enough separation d between them to neglect interlayer electron hopping, we use the Drude model for two-dimensional conductivity of each layer to describe hybridization of graphene’s Dirac plasmon polaritons (DPPs). Performing a layer decomposition of ohmic energy losses, which include excitation of hybridized DPPs (HDPPs), we have found for N = 3 that the middle HDPP eigenfrequency is not excited in the middle layer due to symmetry constraint, whereas the excitation of the lowest HDPP eigenfrequency produces a Fano resonance in the graphene layer that is first traversed by the charged particle. While the angular distribution of transition radiation emitted in the far field region also shows asymmetry with respect to the traversal order by the incident charged particle at supra-THz frequencies, the integrated radiative energy loss is surprisingly independent of both d and N for N ≤ 5, which is explained by a dominant role of the outer graphene layers in transition radiation. We have further found that the integrated ohmic energy loss in optically thin MLG scales as ∝1/N at sub-THz frequencies, which is explained by exposing the role of dissipative processes in graphene at low frequencies. Finally, prominent peaks are observed at supra-THz frequencies in the integrated ohmic energy loss for MLG structures that are not optically thin. The magnitude of those peaks is found to scale with N for N ≥ 2, while their shape and position replicate the peak in a double-layer graphene (N = 2), which is explained by arguing that plasmon hybridization in such MLG structures is dominated by electromagnetic interaction between the nearest-neighbor graphene layers.

P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environment

CERN Document Server

AUTHOR|(CDS)2084505

2015-01-01

In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to $1.5\\times10^{15} n_{eq}/cm^{2}$ corresponding to $3000 fb^{-1}$ after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20~cm${<}R{<}$110~cm) of CMS will consist of n-in-p type sensors. This technology is more radiation hard but also the manufacturing is more challenging compared to p-in-n type sensors due to additional process steps in order to suppress the accumulation of electrons between the readout strips. One possible isolation technique of adjacent strips is the p-stop structure which is a p-type material implantation with a certain pattern for each individual strip. However, electrical breakdown and charge collection studies indicate that the process parameters of the p-stop structure have to be carefully calibrated in order to achieve a sufficient strip isolatio...

Studies for the LHCb SciFi tracker. Development of modules from scintillating fibres and tests of their radiation hardness

Energy Technology Data Exchange (ETDEWEB)

Ekelhof, Robert Jan

2016-05-18

The LHCb detector will see a major upgrade in the LHC long shutdown 2, which is planned for 2019/20. Among others, the tracking stations, currently realised as silicon strip and drift tube detectors, will be replaced by the Scintillating Fibre (SciFi) Tracker. The SciFi Tracker is based on scintillating fibres with a diameter of 250 μm, read out by multichannel silicon photomultipliers. The two major challenges related to the fibres are the radiation damage of the light guidance and the production of precise multi-layer fibre mats. This thesis presents radiation hardness studies performed with protons at the tandem accelerator at Forschungszentrum Garching and in situ in the LHCb cavern. The obtained results are combined with additional data of the LHCb SciFi group and two different wavelength dependent models of the radiation induced attenuation are determined. These are used to simulate the relative light yield, for both models it drops to 83% on average at the end of the nominal lifetime of the SciFi Tracker. A machine and techniques to produce multi-layer fibre mats were developed and optimised. Procedures for the production and alignment are described. These are implemented in the serial production of the SciFi modules which will start in the second quarter 2016.

Radiation effects in metal-oxide-semiconductor capacitors

International Nuclear Information System (INIS)

Collins, J.L.

1987-01-01

The effects of various radiations on commercially made Al-SiO 2 -Si Capacitors (MOSCs) have been investigated. Intrinsic dielectric breakdown in MOSCs has been shown to be a two-stage process dominated by charge injection in a pre-breakdown stage; this is associated with localised high-field injection of carriers from the semiconductor substrate to interfacial and bulk charge traps which, it is proposed, leads to the formation of conducting channels through the dielectric with breakdown occurring as a result of the dissipation of the conduction band energy. A study of radiation-induced dielectric breakdown has revealed the possibility of anomalous hot-electron injection to an excess of bulk oxide traps in the ionization channel produced by very heavily ionizing radiation, which leads to intrinsic breakdown in high-field stressed devices. This is interpreted in terms of a modified model for radiation-induced dielectric breakdown based upon the primary dependence of breakdown on charge injection rather than high-field mechanisms. A detailed investigation of charge trapping and interface state generation due to various radiations has revealed evidence of neutron induced interface states, and the generation of positive oxide charge in devices due to all the radiations tested. The greater the linear energy transfer of the radiation, the greater the magnitude of charge trapped in the oxide and the number of interface states generated. This is interpreted in terms of Si-H and Si-OH bond-breaking at the Si-SiO 2 interface which is enhanced by charge carrier transfer to the interface and by anomalous charge injection to compensate for the excess of charge carriers created by the radiation. (author)

Position statement on ethics, equipoise and research on charged particle radiation therapy.

Science.gov (United States)

Sheehan, Mark; Timlin, Claire; Peach, Ken; Binik, Ariella; Puthenparampil, Wilson; Lodge, Mark; Kehoe, Sean; Brada, Michael; Burnet, Neil; Clarke, Steve; Crellin, Adrian; Dunn, Michael; Fossati, Piero; Harris, Steve; Hocken, Michael; Hope, Tony; Ives, Jonathan; Kamada, Tadashi; London, Alex John; Miller, Robert; Parker, Michael; Pijls-Johannesma, Madelon; Savulescu, Julian; Short, Susan; Skene, Loane; Tsujii, Hirohiko; Tuan, Jeffrey; Weijer, Charles

2014-08-01

The use of charged-particle radiation therapy (CPRT) is an increasingly important development in the treatment of cancer. One of the most pressing controversies about the use of this technology is whether randomised controlled trials are required before this form of treatment can be considered to be the treatment of choice for a wide range of indications. Equipoise is the key ethical concept in determining which research studies are justified. However, there is a good deal of disagreement about how this concept is best understood and applied in the specific case of CPRT. This report is a position statement on these controversies that arises out of a workshop held at Wolfson College, Oxford in August 2011. The workshop brought together international leaders in the relevant fields (radiation oncology, medical physics, radiobiology, research ethics and methodology), including proponents on both sides of the debate, in order to make significant progress on the ethical issues associated with CPRT research. This position statement provides an ethical platform for future research and should enable further work to be done in developing international coordinated programmes of research. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Meson exchange corrections to nuclear weak axial charge density in hard pion model and O+ reversible O- transition in A = 16 nuclei

International Nuclear Information System (INIS)

Jager, H.U.; Kirchbach, M.; Truhlik, E.

1982-01-01

Starting with the hard pion model based on a minimal chiral invariant phenomenological Lagrangian, the two-particle part of the time component of the weak axial-vector current is constructed in the tree-approximation. Pion, rho- and A 1 -meson exchanges are considered. The mesonic exchange operator obtained is applied to describe the purely weak axial 0 + reversible 0 - , ΔT=1 transition in the nuclear A=16 system the muon reaction μ - + 16 O(0 1 + ; T=0) → 16 N(0 1 - ; T=1) + γsub(μ) and beta decay 16 N(0 1 - ; T=1) → 16 O(0 1 + ; T=0) + e - + anti νsub(e). In order to treat nufar structure correlation efects explicit use of shell model wave functions with configuration mixing is made. The large enhancement of the nuclear weak axial charge density with respect to impulse approximation is established

Hard X-ray Emission and Efficient Particle Acceleration by Supernova Remnants

International Nuclear Information System (INIS)

Vink, Jacco

2009-01-01

I discuss the non-thermal X-ray emission from young supernova remnants. Over the last decade it has become clear from both X-ray and γ-ray observations that young supernovae accelerate particles up to 100 TeV. In soft X-rays the accelerated >10 TeV electrons produce synchrotron radiation, coming from narrow filaments located at the shock fronts. The width of these filaments shows that the magnetic fields are relatively high, thus providing evidence for magnetic field amplification.The synchrotron radiation of several remnants is known to extend into the hard X-ray regime. In particular Cas A, has a spectrum that appears as a power law up to almost 100 TeV. This is very surprising, as a steepening is expected going from the soft to the hard X-ray band. The spectrum is likely a result of many superimposed individual spectra, each steepening at different energies. This implies considerable spatial variation in hard X-rays, an obvious target for Simbol-X. The variations will be important to infer local shock acceleration properties, but also magnetic field fluctuations may cause spatial and temporal variations.Finally, I draw the attention to super bubbles and supernovae as sources of cosmic rays. As such they may be sources of hard X-ray emission. In particular, supernovae exploding inside the dense red supergiants winds of their progenitors ares promising candidates for hard X-ray emission.

Hard X-ray Emission and Efficient Particle Acceleration by Supernova Remnants

Science.gov (United States)

Vink, Jacco

2009-05-01

I discuss the non-thermal X-ray emission from young supernova remnants. Over the last decade it has become clear from both X-ray and γ-ray observations that young supernovae accelerate particles up to 100 TeV. In soft X-rays the accelerated >10 TeV electrons produce synchrotron radiation, coming from narrow filaments located at the shock fronts. The width of these filaments shows that the magnetic fields are relatively high, thus providing evidence for magnetic field amplification. The synchrotron radiation of several remnants is known to extend into the hard X-ray regime. In particular Cas A, has a spectrum that appears as a power law up to almost 100 TeV. This is very surprising, as a steepening is expected going from the soft to the hard X-ray band. The spectrum is likely a result of many superimposed individual spectra, each steepening at different energies. This implies considerable spatial variation in hard X-rays, an obvious target for Simbol-X. The variations will be important to infer local shock acceleration properties, but also magnetic field fluctuations may cause spatial and temporal variations. Finally, I draw the attention to super bubbles and supernovae as sources of cosmic rays. As such they may be sources of hard X-ray emission. In particular, supernovae exploding inside the dense red supergiants winds of their progenitors ares promising candidates for hard X-ray emission.

Selective adsorption of ions in charged slit-systems

Directory of Open Access Journals (Sweden)

M.Valiskó

2013-01-01

Full Text Available We study the selective adsorption of various cations into a layered slit system using grand canonical Monte Carlo simulations. The slit system is formed by a series of negatively charged membranes. The electrolyte contains two kinds of cations with different sizes and valences modeled by charged hard spheres immersed in a continuum dielectric solvent. We present results for various cases depending on the combinations of the properties of the competing cations. We concentrate to the case when the divalent cations are larger than the monovalent cations. In this case, size and charge have counterbalancing effects, which results in interesting selectivity phenomena.

Spectrum of relativistic radiation from electric charges and dipoles as they fall freely into a black hole

Energy Technology Data Exchange (ETDEWEB)

Shatskiy, A. A., E-mail: shatskiy@asc.rssi.ru; Novikov, I. D.; Lipatova, L. N. [Russian Academy of Sciences, Astrospace Center, Lebedev Physical Institute (Russian Federation)

2013-06-15

The motion of electric charges and dipoles falling radially and freely into a Schwarzschild black hole is considered. The inverse effect of the electromagnetic fields on the black hole is neglected. Since the dipole is assumed to be a point particle, the deformation due to the action of tidal forces on it is neglected. According to the theorem stating that 'black holes have no hair', the multipole electromagnetic fields should be completely radiated as a multipole falls into a black hole. The electromagnetic radiation power spectrum for these multipoles (a monopole and a dipole) has been found. Differences have been found in the spectra for different orientations of the falling dipole. A general method has been developed to find the radiated multipole electromagnetic fields for multipoles (including higher-order multipoles-quadrupoles, etc.) falling freely into a black hole. The calculated electromagnetic spectra can be compared with observational data from stellar-mass and smaller black holes.

Charge state of oxide layer of SIMOX-structures

CERN Document Server

Askinazi, A Y; Dmitriev, V A; Miloglyadova, L V

2001-01-01

The charge state of the oxide layer of the SIMOX-structures, obtained in the course of forming the oxide layers, bricked up in the silicon volume, through the oxygen ions implantation into the Si, is studied. The charge state of the given structures is studied through the method of the layer-by-layer profiling, which makes it possible to obtain the dependence of the plane zones potential on the oxide layer thickness. It is established, that during the process of the SIMOX-structures formation in the oxide layer near the boundary with the Si there appear defects, responsible for the charge. The radiation from the near-the-ultraviolet (NUV) area without the applied electric field neutralizes the given charge. The simultaneous impact of the NUV-radiation and electric field leads to the formation of significantly positive charge

Plasma focus - a pulsed radiation source

International Nuclear Information System (INIS)

Blagoev, Alexandar; Zapryanov, Stanislav; Gol'tsev, Vasilii; Gemishev, Orlin

2014-01-01

The article is devoted to the applications of plasma focus (PF) in radiobiology. Briefly describes the principle of operation of the device and the parameters of the PF type 'Mader' at the Physics Department of the University. Phase pinch discharge zones appear hot and dense plasma, which is a source of X-ray and neutron pulse when the working gas is deuterium. These radiations are essential for biological applications. Besides these bundles are obtained from accelerated charged particles and shock wave of ionized gas. Described are some of the contributions of other authors using PF in radiobiology. Given the results in the exposure of living organisms with soft X-ray emission of PF. We examined the viability of the cells of the two types of yeasts, after irradiation with X-rays at a dose of 65 mSv, where no change was found on the performance. It is shown that soft X-ray radiation doses on the order of tens of mSv, cause a significant change in the productivity of the electronic transport in the photosynthetic apparatus of Chlamydomonas reinhardtii. Trichoderma reesei M7 shows remarkable vitality irradiation with substantial doses of hard X-ray radiation (tens Sv). Appear endoglyukonazata changes in the protein component and the residual mass

Study of transverse momenta of charged hadrons produced in ν p andbar vp charged current interactions

Science.gov (United States)

Jones, G. T.; Kennedy, B. W.; Middleton, R. P.; O'Neale, S. W.; Cooper, A. M.; Grant, A.; Klein, H.; Mittendorfer, J.; Morrison, D. R. O.; Parker, A.; Schmid, P.; Wachsmuth, H.; Hamisi, F.; Mobayyen, M. M.; Villalobos-Baillie, O.; Aderholz, M.; Deck, L.; Schmitz, N.; Wittek, W.; Corrigan, G.; Myatt, G.; Radojicic, D.; Retter, M.

1984-06-01

Data from a neutrino and antineutrino hydrogen experiment with BEBC are used to investigate transverse properties of the produced charged hadrons. Measurements are presented on average transverse momenta of charged pions as functions of Feynman- x and the hadronic mass, on the transverse momentum flow within an event and on jet-related quantities. The main features of the data are well described by the LUND model. The data favour a version of the model in which soft gluon effects are included and the primordial transverse momentum of the quarks in the proton is small. Effects from 1st order QCD (hard gluon emission) are negligible.

A Cherenkov imager for the charge measurement of the elements of nuclear cosmic radiation

International Nuclear Information System (INIS)

Sallaz-Damaz, Y.

2008-10-01

A Cherenkov imager, CHERCAM (Cherenkov Camera) has been designed and built for the CREAM (Cosmic Ray Energetics and Mass) balloon-borne experiment. The instrument will perform charge measurements of nuclear cosmic-ray over a range extending from proton to iron in the energy domain from 10 10 to 10 15 eV. This work has focused on the development of CHERCAM by creating a simulation of the detector and on the aerogel plan characterization for the radiator. But it has also expanded on the technical aspects of the construction of the detector and its various tests, as well as the development of calibration software and data analysis. (author)

Radiation hardness on very front-end for SPD

International Nuclear Information System (INIS)

Cano, Xavier; Graciani, Ricardo; Gascon, David; Garrido, Lluis; Bota, Sebastia; Herms, Atila; Comerma, Albert; Riera, Jordi

2005-01-01

The calorimeter front-end electronics of the LHCb experiment will be located in a region, which is not protected from radiation. Therefore, all the electronics must be qualified to stand some defined radiation levels. The procedure, measurements and results of an irradiation test for every component of the very front-end SPD detector, which is part of the LHCb calorimeter are presented here. All the tested components, except a custom made ASIC, are commercially available

Study on efficiency of multi-wire tungsten moderator for slow positron source on SPring-8 hard synchrotron radiation

International Nuclear Information System (INIS)

Plokhoi, Vladimir; Kandiev, Yadgar; Samarin, Sergey; Malyshkin, Gennady; Baidin, Grigory; Litvinenko, Igor; Nikitin, Valery

1999-01-01

The paper provides results of numeric simulations of in-target positron production process, processes of moderation, thermalization, diffusion, and reemission of positrons in high efficiency multi-wire moderator made of tungsten monocrystalline wire with regular wire spacing. The paper looks into dynamics of slow positrons in the moderator's vacuum gaps taking into account of external fields. The possibility for using multi-wire moderator with non-regular structure - multi-layer w ire felt m oderator is discussed. According to maximal estimate the multi-wire moderators can reach very high efficiency of fast-slow positron transformation ∼ 10 -2 . Using such moderator the intensity of slow positron source on hard synchrotron radiation of Spring-8 can reach the level of ∼10 11 e + /s. (author)

Investigation of biomedical inner microstructures with hard X-ray phase-contrast imaging

Energy Technology Data Exchange (ETDEWEB)

Shu Hang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); Graduate University of the Chinese Academy of Sciences, 100864 Beijing (China); Zhu Peiping [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); Chen Bo [Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Liu Bo; Yin Hongxia [Capital University of Medical Sciences, 100054 Beijing (China); Li Enrong [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); Graduate University of the Chinese Academy of Sciences, 100864 Beijing (China); Liu Yijin [Department of Physics, University of Science and Technology of China, Hefei 230026 (China); Wang Junyue [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); Graduate University of the Chinese Academy of Sciences, 100864 Beijing (China); Yuan Qingxi; Huang Wanxia; Fang Shouxian [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); Wu Ziyu [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, CAS, 100049 Beijing (China); National Center for NanoScience and Technology, 100080 Beijing (China)], E-mail: wuzy@ihep.ac.cn

2007-09-21

Hard X-ray Phase-Contrast Imaging (HX-PCI) is a new and valuable method that may provide information of the inner parts of an opaque object. Previous reports demonstrated its applicability in soft and hard tissue imaging. Here we provide further evidence for improved image quality and the effective capability to distinguish inner microstructures in real biomedical systems such as cochlea. Experiments performed both at the 4W1A beamline of the Beijing Synchrotron Radiation Facility (BSRF) and at the Taiwan National Synchrotron Radiation Research Center (NSRRC) clearly show details of samples' inner microstructure with a resolution of a few microns. The improved spatial resolution is a relevant achievement for future improved understanding and clinical trials.

Development of a hard microcontroller

International Nuclear Information System (INIS)

Measel, P.R.; Sivo, L.L.; Quilitz, W.E.; Davidson, T.K.

1976-01-01

The applicability of commercially available microprocessors to certain systems requiring radiation survival was assessed. A microcontroller was designed and built to perform a monitor and control function of military operational ground equipment, and demonstrated to exceed the radiation hardness goal. The preparation of the microcontroller module required hardware and software design, selection of LSI and other piece part types, development of piece part and module electrical and radiation test techniques, and the performance of radiation tests on the LSI piece parts and the completed module. The microcontroller has a 16-bit central processor unit, a 4096 word read only memory, and a 256 word read-write memory. The module has circumvention circuitry, including a PIN diode radiation detector. The processor device used was the MMI 6701 T 2 L Schottky bipolar 4-bit slice. Electrical exerciser circuits were developed for in-situ electrical testing of microprocessors and memories during irradiation. A test program was developed for a Terradyne J283 microcircuit tester for more complete electrical characterization of the MMI 6701 microprocessor. A simple self-test algorithm was used in the microcontroller for performance testing during irradiation. For the operational demonstration of the microcontroller a TI 960A minicomputer was used to provide the required complex inputs to the module and verify the module outputs

Charge equilibrium and radiation of low-energy cosmic rays passing through interstellar medium

International Nuclear Information System (INIS)

Rule, D.W.; Omidvar, K.

1979-01-01

The charge equilibrium and radiation an oxygen and an iron beam in the MeV per nucleon energy range, representing a typical beam of low-energy cosmic rays passing through the interstellar medium, are considered. Electron loss of the beam has been taken into account by means of the first Born approximation allowing for the target atom to remain unexcited, or to be excited to all possible states. Electron-capture cross sections have been calculated by means of the scaled Oppenheimer-Brinkman-Kramers approximation, taking into account of atomic shells of the target atoms and capture into all excited states of the projectile. The capture and loss cross sections are found to be within 20%--30% of the existing experimental values for most of the cases considered. Radiation of the beam due to electron capture into the excited states of the ion, collisional excitation, and collisional inner-shell ionization, taking into account the fluorescence yield of the ions has been considered. Effective X-ray production cross sections and mutliplicities for the most energetic X-ray lines emitted by the Fe and O beams have been calculated, and error estimates made for the results

Charge equilibrium and radiation of low-energy cosmic rays passing through interstellar medium

Science.gov (United States)

Rule, D. W.; Omidvar, K.

1979-01-01

The charge equilibrium and radiation of an oxygen and an iron beam in the MeV per nucleon energy range, representing a typical beam of low-energy cosmic rays passing through the interstellar medium, are considered. Electron loss of the beam has been taken into account by means of the first Born approximation, allowing for the target atom to remain unexcited or to be excited to all possible states. Electron-capture cross sections have been calculated by means of the scaled Oppenheimer-Brinkman-Kramers approximation, taking into account all atomic shells of the target atoms and capture into all excited states of the projectile. The capture and loss cross sections are found to be within 20%-30% of the existing experimental values for most of the cases considered. Radiation of the beam due to electron capture into the excited states of the ion, collisional excitation, and collisional inner-shell ionization, taking into account the fluorescence yield of the ions, has been considered. Effective X-ray production cross sections and multiplicities for the most energetic X-ray lines emitted by the Fe and O beams have been calculated, and error estimates made for the results.

Radiation physics

International Nuclear Information System (INIS)

Nam, Sang Hui

1991-02-01

This book deals with radiation physics, which introduces atomic theory and an atomic nucleus of materials, conception of an atom and materials, wave and particle, X ray generation and character, a radioactive element and change law, nature of radioactivity, neutron rays, fission, alpha collapse and beta collage and a neutrino collapse of artificial radioactivity such as collapse of artificial nucleus and artificial radioactivity and radiative capture, interaction with materials like interaction between a charged particle and materials and interaction among X-ray, r-ray and materials, radiation of quantity and unit and a charged particle accelerator.

Total ionizing dose radiation hardness of the ATLAS MDT-ASD and the HP-Agilent 0.5 um CMOS process

CERN Document Server

Posch, C

2002-01-01

A total ionizing dose (TID) test of the MDT-ASD, the ATLAS MDT front-end chip has been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5 um CMOS process (AMOS14TB). The accumulated TID at the end of the test was 300 krad, delivered by 160 MeV protons at a rate of approximately 70 rad/sec. All 10 irradiated chips retained their full functionality and performance and showed only irrelevantly small changes in device parameters. As the total accumulated dose is substantially higher than the relevant ATLAS Radiation Tolerance Criteria (RTCtid), the results of this test indicate that MDT-ASD meets the ATLAS TID radiation hardness requirements. In addition, the results of this test correspond well with results of a 30 keV gamma TID irradiation test performed by us on an earlier prototype at the CERN x-ray facility as well as with results of other irradiation test on this process found in literature.

Monitoring And Recording Data For Solar Radiation Temperature And Charging Current

Directory of Open Access Journals (Sweden)

Aung Bhone Myint

2015-08-01

Full Text Available A data logger based on 8051 microcontroller has been implemented in this project to measure the solar radiation temperature and charging current. Development of a low-cost data logger can easily be made and easily be used to convert the analog signal of physical parameters of various test or other purposes of engineering. By using a suitable program code it can be used to read the value digitally with a PC. Our aim is to provide with a module and a software package when installed in a computer one can remotely acquire and monitor several numbers of the same or different types of signals sequentially at a time. Signals obtained from various sensors have been effectively conditioned. Now interfacing these signals using ADC with the Bluetooth module port of a computer satisfies the very goal of data acquisition. Proposed system provides better performance and has low cost versatile portable.

Ionization processes in the Fe 27 region of hot iron plasma in the field of hard gamma radiation