WorldWideScience

Sample records for radiation emitting devices

  1. Radiation emitting devices act

    International Nuclear Information System (INIS)

    1970-01-01

    This Act, entitled the Radiation Emitting Devices Act, is concerned with the sale and importation of radiation emitting devices. Laws relating to the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of these devices are listed as well as penalties for any person who is convicted of breaking these laws

  2. Radiation emitting devices regulations

    International Nuclear Information System (INIS)

    1970-01-01

    The Radiation Emitting Devices Regulations are the regulations referred to in the Radiation Emitting Devices Act and relate to the operation of devices. They include standards of design and construction, standards of functioning, warning symbol specifications in addition to information relating to the seizure and detention of machines failing to comply with the regulations. The radiation emitting devices consist of the following: television receivers, extra-oral dental x-ray equipment, microwave ovens, baggage inspection x-ray devices, demonstration--type gas discharge devices, photofluorographic x-ray equipment, laser scanners, demonstration lasers, low energy electron microscopes, high intensity mercury vapour discharge lamps, sunlamps, diagnostic x-ray equipment, ultrasound therapy devices, x-ray diffraction equipment, cabinet x-ray equipment and therapeutic x-ray equipment

  3. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  4. SOR/72-43 Radiation Emitting Devices Regulations

    International Nuclear Information System (INIS)

    1972-01-01

    These Regulations of 10 February 1972, supplemented by SOR/77-895, lay down the classes of radiation emitting devices for the purposes of the Radiation Emitting Devices Act. They lay down their standards of design and construction and warning sign specifications and provide for the procedure to be followed by inspectors of such devices. The devices include inter alia extra-oral dental x-ray equipment, baggage inspection x-ray devices, laser scanners, television receivers. (NEA)

  5. Evaluation of stray radiofrequency radiation emitted by electrosurgical devices

    International Nuclear Information System (INIS)

    De Marco, M; Maggi, S

    2006-01-01

    Electrosurgery refers to the passage of a high-frequency, high-voltage electrical current through the body to achieve the desired surgical effects. At the same time, these procedures are accompanied by a general increase of the electromagnetic field in an operating room that may expose both patients and personnel to relatively high levels of radiofrequency radiation. In the first part of this study, we have taken into account the radiation emitted by different monopolar electrosurgical devices, evaluating the electromagnetic field strength delivered by an electrosurgical handle and straying from units and other electrosurgical accessories. As a summary, in the worst case a surgeon's hands are exposed to a continuous and pulsed RF wave whose magnetic field strength is 0.75 A m -1 (E-field 400 V m -1 ). Occasionally stray radiation may exceed ICNIRP's occupational exposure guidelines, especially close to the patient return plate. In the second part of this paper, we have analysed areas of particular concern to prevent electromagnetic interference with some life-support devices (ventilators and electrocardiographic devices), which have failed to operate correctly. Most clinically relevant interference occurred when an electrosurgery device was used within 0.3 m of medical equipment. In the appendix, we suggest some practical recommendations intended to minimize the potential for electromagnetic hazards due to therapeutic application of RF energy

  6. Bill C-5, an act to amend the radiation emitting devices act

    International Nuclear Information System (INIS)

    1984-01-01

    This Act, entitled Bill C-5, allows for a series of amendments to the Radiation Emitting Devices Act. The amendments relate to regulations concerned with the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of radiation emitting devices

  7. Relative risk analysis in regulating the use of radiation-emitting medical devices. A preliminary application

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Banks, W.W.; Altenbach, T.J.; Fischer, L.E. [Lawrence Livermore National Lab., CA (United States)

    1995-09-01

    This report describes a preliminary application of an analysis approach for assessing relative risks in the use of radiation- emitting medical devices. Results are presented on human-initiated actions and failure modes that are most likely to occur in the use of the Gamma Knife, a gamma irradiation therapy device. This effort represents an initial step in a US Nuclear Regulatory Commission (NRC) plan to evaluate the potential role of risk analysis in regulating the use of nuclear medical devices. For this preliminary application of risk assessment, the focus was to develop a basic process using existing techniques for identifying the most likely risk contributors and their relative importance. The approach taken developed relative risk rankings and profiles that incorporated the type and quality of data available and could present results in an easily understood form. This work was performed by the Lawrence Livermore National Laboratory for the NRC.

  8. Relative risk analysis in regulating the use of radiation-emitting medical devices. A preliminary application

    International Nuclear Information System (INIS)

    Jones, E.D.; Banks, W.W.; Altenbach, T.J.; Fischer, L.E.

    1995-09-01

    This report describes a preliminary application of an analysis approach for assessing relative risks in the use of radiation- emitting medical devices. Results are presented on human-initiated actions and failure modes that are most likely to occur in the use of the Gamma Knife, a gamma irradiation therapy device. This effort represents an initial step in a US Nuclear Regulatory Commission (NRC) plan to evaluate the potential role of risk analysis in regulating the use of nuclear medical devices. For this preliminary application of risk assessment, the focus was to develop a basic process using existing techniques for identifying the most likely risk contributors and their relative importance. The approach taken developed relative risk rankings and profiles that incorporated the type and quality of data available and could present results in an easily understood form. This work was performed by the Lawrence Livermore National Laboratory for the NRC

  9. Estimating the Infrared Radiation Wavelength Emitted by a Remote Control Device Using a Digital Camera

    Science.gov (United States)

    Catelli, Francisco; Giovannini, Odilon; Bolzan, Vicente Dall Agnol

    2011-01-01

    The interference fringes produced by a diffraction grating illuminated with radiation from a TV remote control and a red laser beam are, simultaneously, captured by a digital camera. Based on an image with two interference patterns, an estimate of the infrared radiation wavelength emitted by a TV remote control is made. (Contains 4 figures.)

  10. Overview of a benefit/risk ratio optimized for a radiation emitting device used in non-destructive testing

    Energy Technology Data Exchange (ETDEWEB)

    Maharaj, H.P., E-mail: H_P_Maharaj@hc-sc.gc.ca [Health Canada, Dept. of Health, Consumer and Clinical Radiaton Protection Bureau, Ottawa, Ontario (Canada)

    2016-03-15

    This paper aims to provide an overview of an optimized benefit/risk ratio for a radiation emitting device. The device, which is portable, hand-held, and open-beam x-ray tube based, is utilized by a wide variety of industries for purposes of determining elemental or chemical analyses of materials in-situ based on fluorescent x-rays. These analyses do not cause damage or permanent alteration of the test materials and are considered a non-destructive test (NDT). Briefly, the key characteristics, principles of use and radiation hazards associated with the Hay device are presented and discussed. In view of the potential radiation risks, a long term strategy that incorporates risk factors and guiding principles intended to mitigate the radiation risks to the end user was considered and applied. Consequently, an operator certification program was developed on the basis of an International Standards Organization (ISO) standard (ISO 20807:2004) and in collaboration with various stake holders and was implemented by a federal national NDT certification body several years ago. It comprises a written radiation safety examination and hands-on training with the x-ray device. The operator certification program was recently revised and the changes appear beneficial. There is a fivefold increase in operator certification (Levels 1 a nd 2) to date compared with earlier years. Results are favorable and promising. An operational guidance document is available to help mitigate radiation risks. Operator certification in conjunction with the use of the operational guidance document is prudent, and is recommended for end users of the x-ray device. Manufacturers and owners of the x-ray devices will also benefit from the operational guidance document. (author)

  11. Overview of a benefit/risk ratio optimized for a radiation emitting device used in non-destructive testing

    International Nuclear Information System (INIS)

    Maharaj, H.P.

    2016-01-01

    This paper aims to provide an overview of an optimized benefit/risk ratio for a radiation emitting device. The device, which is portable, hand-held, and open-beam x-ray tube based, is utilized by a wide variety of industries for purposes of determining elemental or chemical analyses of materials in-situ based on fluorescent x-rays. These analyses do not cause damage or permanent alteration of the test materials and are considered a non-destructive test (NDT). Briefly, the key characteristics, principles of use and radiation hazards associated with the Hay device are presented and discussed. In view of the potential radiation risks, a long term strategy that incorporates risk factors and guiding principles intended to mitigate the radiation risks to the end user was considered and applied. Consequently, an operator certification program was developed on the basis of an International Standards Organization (ISO) standard (ISO 20807:2004) and in collaboration with various stake holders and was implemented by a federal national NDT certification body several years ago. It comprises a written radiation safety examination and hands-on training with the x-ray device. The operator certification program was recently revised and the changes appear beneficial. There is a fivefold increase in operator certification (Levels 1 a nd 2) to date compared with earlier years. Results are favorable and promising. An operational guidance document is available to help mitigate radiation risks. Operator certification in conjunction with the use of the operational guidance document is prudent, and is recommended for end users of the x-ray device. Manufacturers and owners of the x-ray devices will also benefit from the operational guidance document. (author)

  12. Radiation effects in optoelectronic devices

    International Nuclear Information System (INIS)

    Barnes, C.E.

    1977-03-01

    A summary is given of studies on radiation effects in light-emitting diodes, laser diodes, detectors, optical isolators and optical fibers. It is shown that the study of radiation damage in these devices can provide valuable information concerning the nature of the devices themselves, as well as methods of hardening these devices for applications in radiation environments

  13. Pyridine Based Polymer Light-Emitting Devices

    National Research Council Canada - National Science Library

    Wang, Y

    1997-01-01

    ...) as a hole transporting/electron blocking layer. This improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

  14. Light emitting device having peripheral emissive region

    Science.gov (United States)

    Forrest, Stephen R

    2013-05-28

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  15. Radiation effects in optoelectronic devices

    International Nuclear Information System (INIS)

    Barnes, C.E.; Wiczer, J.J.

    1984-05-01

    Purpose of this report is to provide not only a summary of radiation damage studies at Sandia National Laboratories, but also of those in the literature on the components of optoelectronic systems: light emitting diodes (LEDs), laser diodes, photodetectors, optical fibers, and optical isolators. This review of radiation damage in optoelectronic components is structured according to device type. In each section, a brief discussion of those device properties relevant to radiation effects is given

  16. Light-emitting device test systems

    Science.gov (United States)

    McCord, Mark; Brodie, Alan; George, James; Guan, Yu; Nyffenegger, Ralph

    2018-01-23

    Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

  17. Organic bistable light-emitting devices

    Science.gov (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  18. Radiation ray measuring device

    International Nuclear Information System (INIS)

    Maekawa, Tatsuyuki; Ida, Masaki.

    1997-01-01

    The present invention provides a chained-radiation ray monitoring system which can be applied to an actual monitoring system of a nuclear power plant or the like. Namely, this device comprises a plurality of scintillation detectors. Each of the detectors has two light take-out ports for emitting light corresponding to radiation rays irradiated from the object of the measurement to optical fibers. In addition, incident light from the optical fiber by way of one of the light take-out optical ports is transmitted to the other of the ports and sent from the other optical port to the fibers. Plurality sets of measuring systems are provided in which each of the detectors are disposed corresponding to a plurality of objects to be measured. A signal processing device is (1) connected with optical fibers of plurality sets of measuring systems in conjunction, (2) detects the optical pulses inputted from the optical fibers to identify the detector from which the optical pulses are sent and (3) measures the amount of radiation rays detected by the identified detector. As a result, the device of the present invention can form a measuring system with redundancy. (I.S.)

  19. Efficient white organic light emitting devices with dual emitting layers

    International Nuclear Information System (INIS)

    Wu Yaoshan; Hwang Shiaowen; Chen Hsianhung; Lee Mengting; Shen Wenjian; Chen, C.H.

    2005-01-01

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF x / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm 2 , but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm 2 due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm 2

  20. Efficient white organic light emitting devices with dual emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yaoshan [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Hwang Shiaowen [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)]. E-mail: jesse@faculty.nctu.edu.tw; Chen Hsianhung [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Lee Mengting [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Shen Wenjian [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Chen, C.H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)

    2005-09-22

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF {sub x} / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm{sup 2}, but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm{sup 2} due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm{sup 2}.

  1. Report by the work-group on 'safety of medical devices emitting ionizing radiations'. Articulation of radiation protection requirements of the 97/43/Euratom directive and IAEA recommendations with the essential requirements of the 93/42/CEE directive related to medical devices used in external radiotherapy

    International Nuclear Information System (INIS)

    2010-01-01

    As some dysfunctions and events had been reported in 2007 and 2008 in field of radiotherapy, this report aims at clarifying the articulation between the different European regulations concerning medical devices emitting ionizing radiations and radiation protection. The authors report a survey with device manufacturers, and analyze the content of the different regulations and recommendations. Then, the authors recommend and propose a set of actions related to the IAEA requirements and recommendations, to CE marking requirements, and to new radiation protection and safety requirements present in the Euratom directive

  2. Radiation Emitting Product Corrective Actions and Recalls

    Data.gov (United States)

    U.S. Department of Health & Human Services — This database provides descriptions of radiation-emitting products that have been recalled under an approved corrective action plan to remove defective and...

  3. Radiation-emitting Electronic Product Codes

    Data.gov (United States)

    U.S. Department of Health & Human Services — This database contains product names and associated information developed by the Center for all products, both medical and non-medical, which emit radiation. It...

  4. Microwave discharge electrodeless lamps (MDEL). III. A novel tungsten-triggered MDEL device emitting VUV and UVC radiation for use in wastewater treatment.

    Science.gov (United States)

    Horikoshi, Satoshi; Miura, Takashi; Kajitani, Masatsugu; Serpone, Nick

    2008-03-01

    Exposure to low doses of the xenoestrogen bisphenol A (BPA) and to the hormonal 2,4-dichlorophenoxyacetic acid (2,4-D) herbicide, an environmental endocrine disruptor, can have serious health consequences such as the induction of mammary gland ductal hyperplasias and carcinoma (LaChapelle et al., Reprod. Toxicol., 2007, 23, 20; Murray et al., Reprod. Toxicol., 2007, 23, 383). To the extent that these toxins are present in wastewaters (Donald et al., Sci. Total Environ. 1999, 231, 173; Brotons et al., Environ. Health Perspect. 1994, 103, 608; Olea et al., Environ. Health Perspect. 1996, 104, 298; Biles et al., J. Agric. Food Chem. 1997, 45, 3541; Markey et al., J. Steroid Biochem. Mol. Biol., 2003, 83, 235), we examined their oxidative destruction in aqueous media by a novel light source. A tungsten-triggered microwave discharge electrodeless lamp (W-MDEL) was fabricated for possible use in wastewater treatment using vacuum UV-transparent quartz in which a tungsten trigger, also embedded in quartz, was attached to the MDEL to aid in the self-ignition of the lamp on irradiation at low microwave power levels. The quantity of mercury gas in the W-MDEL was optimized by monitoring the continuous radiation and peak intensities of the emitted light in the vacuum UV (VUV) and UVC regions. The usefulness of the W-MDEL device was assessed through the degradation of 2,4-D and BPA in air-equilibrated aqueous media and in oxygen-saturated aqueous media. Enhanced degradation of these two xenoestrogenic toxins was achieved by increasing the number of W-MDEL devices while keeping constant the microwave radiation feeding each W-MDEL lamp. This novel lamp provides an additional light source in the photooxidation of environmental contaminants without the need for a metal-oxide photocatalyst. Under our conditions, process dynamics using the W-MDEL light source are greater than with the more conventional photochemical methods that employ low-pressure Hg arc electrode lamps in synthetic

  5. Principles of phosphorescent organic light emitting devices.

    Science.gov (United States)

    Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

    2014-02-07

    Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

  6. Electron emitting filaments for electron discharge devices

    International Nuclear Information System (INIS)

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1988-01-01

    This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

  7. The exemption from the requirement of registration and/or licensing of some sources. machines and devices emitting ionizing and /or on ionizing radiation: a proposed draft for Israeli regulations

    Energy Technology Data Exchange (ETDEWEB)

    Schlesinger, T; Margaliot, M [Israel Atomic Energy Commission, Yavne (Israel). Soreq Nuclear Research Center

    1997-11-16

    The licensing and authorization of the import, purchase, distribution, transportation and application of radioactive materials and devices emitting ionizing and/or non-ionizing radiation are carried out in Israel by the Ministries of the Environment and of Health. The legal basis for file authority of these Ministries in radiation protection matters is file {sup P}harmacists Regulation- Radioactive Elements and Products Thereof, 1981 (revision 1994) (PRREPT). Licenses are issued by the Chief Radiation Executive (CUE) appointed by the Minister of the Environment and the Minister of Health. The Regulations include a clause which enables the CUE to exempt certain amounts of radioactive materials from file requirements laid down in the PRREPT. The exemption clause is general and does not indicate the types and amounts of radioactive material may be exempted. The proposed draft Israeli regulations are related to exemption of some sources, machines and devices emitting ionizing and non-ionizing radiation, wife a suggestion to extend file above mentioned exemption clause to include some machines and devices and to provide an explicit and detailed list of materials, sources and devices to be exempted. Among these are the following: (authors)

  8. The exemption from the requirement of registration and/or licensing of some sources. machines and devices emitting ionizing and /or on ionizing radiation: a proposed draft for Israeli regulations

    International Nuclear Information System (INIS)

    Schlesinger, T.; Margaliot, M.

    1997-01-01

    The licensing and authorization of the import, purchase, distribution, transportation and application of radioactive materials and devices emitting ionizing and/or non-ionizing radiation are carried out in Israel by the Ministries of the Environment and of Health. The legal basis for file authority of these Ministries in radiation protection matters is file P harmacists Regulation- Radioactive Elements and Products Thereof, 1981 (revision 1994) (PRREPT). Licenses are issued by the Chief Radiation Executive (CUE) appointed by the Minister of the Environment and the Minister of Health. The Regulations include a clause which enables the CUE to exempt certain amounts of radioactive materials from file requirements laid down in the PRREPT. The exemption clause is general and does not indicate the types and amounts of radioactive material may be exempted. The proposed draft Israeli regulations are related to exemption of some sources, machines and devices emitting ionizing and non-ionizing radiation, wife a suggestion to extend file above mentioned exemption clause to include some machines and devices and to provide an explicit and detailed list of materials, sources and devices to be exempted. Among these are the following: (authors)

  9. Near-infrared light emitting device using semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

    2018-04-03

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  10. Degradation in organic light emitting devices

    Science.gov (United States)

    Dinh, Vincent Vinh

    This thesis is about the fundamental causes of degradation in tris(8-Hydroxyquinoline) Aluminum (Alq3)-based organic light emitting diodes (OLEDs). Degradation typically occurs when a current is forced through an insulating material. Since the insulator does not support conduction waves (in its ground state), chemical restructuring must occur to accommodate the current. OLEDs have many technical advantages over the well known semiconductor-based light emitting diodes (LEDs). OLEDs have quantum efficiencies ˜1% (˜10 times higher than the LEDs), and operational power thresholds ˜.05mW (˜100 lower than the LEDs). OLEDs are preferred in power limited and portable devices; devices such as laptops and displays consume ˜1/4 of the supplied power---any power saving is significant. Other advantages, like better compliance to curved surfaces and ease of fabrication, give the OLEDs an even greater edge over the LEDs. OLEDs must have at least comparable or better lifetimes to remain attractive. Typical OLEDs last several 100hrs compared to the several 1000hrs for the LEDs. For reliable OLED application, it is necessary to understand the above breakdown mechanism. In this thesis, we attempt to understand the breakdown by looking at how OLEDs are made, how they work, and when they don't. In the opening sections, we give an overview of OLEDs and LEDs, especially how sustained luminescence is achieved through current circulation. Then in Chapter 2, we look at the basic components in the OLEDs. In Chapter 3 we look at how a hole material (like poly-vinyl carbazole or PVK) establishes an excitonic environment for the sustained luminescence in Alq3. We then approximate how potential is distributed when a simple luminescence system is in operation. In Chapter 4, we look at ways of measuring this distribution via the OLED impedance. Finally in Chapter 5, we look at the OLED stability under light emission conditions via PVK and Alq3 photoemission and photoabsorption spectra

  11. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  12. Radiation flux measuring device

    International Nuclear Information System (INIS)

    Corte, E.; Maitra, P.

    1977-01-01

    A radiation flux measuring device is described which employs a differential pair of transistors, the output of which is maintained constant, connected to a radiation detector. Means connected to the differential pair produce a signal representing the log of the a-c component of the radiation detector, thereby providing a signal representing the true root mean square logarithmic output. 3 claims, 2 figures

  13. Counterbalanced radiation detection device

    International Nuclear Information System (INIS)

    Platz, W.

    1986-01-01

    A counterbalanced radiation detection device is described which consists of: (a) a base; (b) a radiation detector having a known weight; (c) means connected with the radiation detector and the base for positioning the radiation detector in different heights with respect to the base; (d) electronic component means movably mounted on the base for counterbalancing the weight of the radiation detector; (e) means connected with the electronic component means and the radiation detector positioning means for positioning the electronic component means in different heights with respect to the base opposite to the heights of the radiation detector; (f) means connected with the radiation detector and the base for shifting the radiation detector horizontally with respect to the base; and (g) means connected with the electronic component means and the radiation detector shifting means for shifting the electronic component means horizontally with respect to the base in opposite direction to shifting of the radiation detector

  14. GREEN LIGHT EMITTING TRICOMPONENT LUMINOPHORS OF 2-NAPHTHOL FOR CONSTRUCTION OF ORGANIC LIGHT EMITTING DEVICES

    OpenAIRE

    K. G. MANE , P. B. NAGORE , DR. S. R. PUJARI

    2018-01-01

    This article presents a previous study and incredible progress in basic theoretical modeling, and working for organic light-emitting devices (OLEDs) including preparation and characteristic studies of Organo- Luminescent Materials by conventional solid state reaction technique.

  15. Enhanced quantum efficiency in blue-emitting polymer/dielectric nanolayer nanocomposite light-emitting devices

    International Nuclear Information System (INIS)

    Park, Jong Hyeok; Lim, Yong Taik; Park, O Ok; Yu, Jae-Woong; Kim, Jai Kyeong; Kim, Young Chul

    2004-01-01

    Light-emitting devices based on environmentally stable, blue-emitting polymer/dielectric nanolayer nanocomposites were fabricated by blending poly(di-octylfluorene) (PDOF) with organo-clay. By reducing the excimer formation that leads to long wavelength tails, the photoluminescence (PL) and electroluminescence (EL) color purity of the device was enhanced. When a conjugated polymer/dielectric nanolayer nanocomposite is applied to an EL device, we expect an electronic structure similar to the well-known quantum well in small nanodomains. The ratio of PDOF/organo-clay was regulated from 2:1 to 0.5:1 (w/w). The light-emitting device of 0.5:1 (w/w) blend demonstrated the highest quantum efficiency (QE), 0.72% (ph/el), which is ∼500 times higher value compared with that of the pure PDOF layer device. However, the driving voltage of the nanocomposite devices tended to increase with increasing organo-clay content

  16. Vacuum Deposited Organic Light Emitting Devices on Flexible Substrates

    National Research Council Canada - National Science Library

    Forrest, Stephen

    2002-01-01

    The objective of this eight year program was to demonstrate both passive and active matrix, flexible, small scale displays based on small molecular weight organic light emitting device (OLED) technology...

  17. Recent Advances in Conjugated Polymers for Light Emitting Devices

    Science.gov (United States)

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  18. [A novel yellow organic light-emitting device].

    Science.gov (United States)

    Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

    2008-07-01

    The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

  19. Silicon based light-emitting materials and devices

    International Nuclear Information System (INIS)

    Chen Weide

    1999-01-01

    Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

  20. Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

    KAUST Repository

    Yang, Xiaohui; Zheng, Shijun; Chae, HyunSik; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

    2013-01-01

    We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4

  1. Null bactericidal effect of ultraviolet radiation emitted by LEDs.

    Directory of Open Access Journals (Sweden)

    Francisco Alcántara Muñoz

    2016-11-01

    Full Text Available This research has aimed to assess the bactericidal effect of ultraviolet light emitted by LEDS on the growth on Petri dishes of microorganisms whose legal limits in foods have been established. An electrically fed apparatus has been designed with precise timing and a camera to prevent light spillage, in which two ultraviolet radiation emission devices were connected by LED technology at different wavelengths: through an array of LEDS emitting at around 350nm, and a single specific emission LED at 280nm. 1000 cfu of E. Coli and S. aureus sown on PCA were used as prototypes of gram negative and positive bacteria, respectively, onto which ultraviolet light was radiated at different time intervals, by means of both devices, with the whole experiment being carried out in triplicate . In none of the three series of treatments at the two wavelengths were reductions in microbial growth observed. The series of sowings on PCA were done on unseeded plates in order to be able to discard the likelihood of subsequent recontamination.

  2. CASPER: Concordia Atmospheric SPectroscopy of Emitted Radiation

    Science.gov (United States)

    de Petris, M.; Catalano, A.; de Gregori, S.; Lamagna, L.; Lattanzi, V.; Luzzi, G.; Maoli, R.; Melchiorri, A.; Melchiorri, F.; Savini, G.; Vetrani, G. G.; Battistelli, E. S.; Valenziano, L.; Mandolesi, N.; Villa, F.; Cuttaia, F.; Ade, P. A. R.; Mauskopf, P.; Orlando, A.; Encrenaz, P.; Pardo, J. R.; Cernicharo, J.

    CASPER (Concordia Atmospheric SPectroscopy of Emitted Radiation) is a spectrometer proposed for installation at Dome C, devoted to measurements of atmospheric emission in the spectral region between 180 μm and 3 mm (3 55 cm-1). This instrument will be able to perform continuous spectral sampling at different altitudes at angular scales of 1°. From the recorded data it is possible to extract atmospheric transmittance within 1% in the whole wide operating band, together with water vapour content and O{2} and O{3} concentrations. CASPER will allow us to characterize the site for future FIR/mm telescopes. Atmospheric data recorded by CASPER will allow for correction of astrophysical and cosmological observations without the need for telescope-specific procedures and further loss of observation time with more precision in the observations themselves. Calibration of ground-based telescopes on known sky sources is strongly affected by atmospheric absorption. CASPER has this as its primary goal. The spectrometer is based on a Martin-Puplett interferometer. Two data sampling solutions will be performed: phase modulation & fast scan strategy. Sky radiation is collected towards the interferometer by an optical setup that allows the field of view, to explore the full 0° div 90° range of elevation angles. With a low spurious polarization instrument, monitoring of polarized atmospheric contribution will be possible.

  3. Solution processed, white emitting tandem organic light-emitting diodes with inverted device architecture.

    Science.gov (United States)

    Höfle, Stefan; Schienle, Alexander; Bernhard, Christoph; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

    2014-08-13

    Fully solution processed monochromatic and white-light emitting tandem or multi-photon polymer OLEDs with an inverted device architecture have been realized by employing WO3 /PEDOT:PSS/ZnO/PEI charge carrier generation layers. The luminance of the sub-OLEDs adds up in the stacked device indicating multi-photon emission. The white OLEDs exhibit a CRI of 75. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Smartphone-Driven Low-Power Light-Emitting Device

    Directory of Open Access Journals (Sweden)

    Hea-Ja An

    2017-01-01

    Full Text Available Low-level light (laser therapy (LLLT has been widely researched in the recent past. Existing LLLT studies were performed based on laser. Recently, studies using LED have increased. This study presents a smartphone-driven low-power light-emitting device for use in colour therapy as an alternative medicine. The device consists of a control unit and a colour probe. The device is powered by and communicates with a smartphone using USB On-The-Go (OTG technology. The control unit controls emitting time and intensity of illumination with the configuration value of a smartphone application. Intensity is controlled by pulse width modulation (PWM without feedback. A calibration is performed to resolve a drawback of no feedback. To calibrate, intensity is measured in every 10 percent PWM output. PWM value is linearly calibrated to obtain accurate intensity. The device can control the intensity of illumination, and so, it can find application in varied scenarios.

  5. Si light-emitting device in integrated photonic CMOS ICs

    Science.gov (United States)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  6. Radiation monitoring device

    International Nuclear Information System (INIS)

    Sato, Toshifumi.

    1993-01-01

    The device of the present invention concerns a reactor start-up region monitor of a nuclear power plant. In an existent start-up region monitor, bias voltage is limited, if the reactor moves to a power region, in order to prevent degradation of radiation detectors. Accordingly, since the power is lower than an actual reactor power, the reactor power can not be monitored. The device of the present invention comprises a memory means for previously storing a Plateau's characteristic of the radiation detectors and a correction processing means for obtaining a correction coefficient in accordance with the Plateau's characteristic to correct and calculate the reactor power when the bias voltage is limited. With such a constitution, when the reactor power exceeds a predetermined value and the bias voltage is limited, the correction coefficient can be obtained by the memory means and the correction processing means. Corrected reactor power can also be obtained from the start-up region monitor by the correction coefficient. As a result, monitoring of the reactor power can be continued while preventing degradation of the radiation detector even if the bias voltage is limited. (I.S.)

  7. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui; Jabbour, Ghassan E.

    2013-01-01

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices

  8. Radiation detection device

    International Nuclear Information System (INIS)

    Peschmann, Kristian.

    1982-01-01

    A radiation detector suitable for use in computer tomography device has an ionization chamber which comprises a high voltage electrode, a collector electrode, a high voltage source having two terminals, one connected to the high voltage electrode, current measuring means having two terminals, one connected to the high voltage source and the other to the collector electrode, and an auxilliary electrode near and parallel to the entrance window of the device, having one adjacent to the high voltage electrode and the other adjacent but not connected to the collector electrode. The auxilliary electrode is connected to the high voltage source. In this way the electric field between the high voltage and collector electrodes is made homogeneous in the vicinity of the auxilliary electrode, improving the measuring speed of the detector

  9. Salt-Doped Polymer Light-Emitting Devices

    Science.gov (United States)

    Gautier, Bathilde

    Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

  10. Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

    International Nuclear Information System (INIS)

    Liu Xiang; Wei Fuxiang; Liu Hui

    2009-01-01

    Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated. TBADN:3%DSAPh and Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 were used as emitting materials of microcavity OLEDs. On a patterned glass substrate, silver was deposited as reflective anode, and copper phthalocyanine (CuPc) layer as HIL and 4'-bis[N-(1-Naphthyl)- N-phenyl-amino]biphenyl (NPB) layer as HTL were made. Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%. By changing the thickness of indium tin oxide ITO, deep blue with Commission Internationale de L'Eclairage chromaticity coordinates (CIEx, y) of (0.141, 0.049) was obtained on TBADN:3%DSAPh devices, and different color (red, blue and green) was obtained on Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 devices, full width at half maxima (FWHM) was only 17 nm. The spectral intensity and FWHM of emission in cavity devices have also been studied.

  11. Oxycarbonitride phosphors and light emitting devices using the same

    Science.gov (United States)

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2013-10-08

    Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  12. Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

    2008-07-01

    Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

  13. Can a tachyon emit light radiation in all directions

    Energy Technology Data Exchange (ETDEWEB)

    Ramanujam, G A [NGM Coll., Tamil Nadu (India). Dept. of Physics

    1976-03-01

    It is shown here that a critical analysis of the approaches employed by various authors to accommodate tachyons into special relativity leads one to the conclusion that a tachyon can emit light radiation only along its line of motion.

  14. Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

    Science.gov (United States)

    Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

    2012-12-01

    We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

  15. Printing method for organic light emitting device lighting

    Science.gov (United States)

    Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

    2013-03-01

    Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

  16. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Science.gov (United States)

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Novel Biomedical Device Utilizing Light-Emitting Nanostructures Developed

    Science.gov (United States)

    Scardelletti, Maximilian C.; Goldman, Rachel

    2004-01-01

    Sketches and chemical diagrams of state-of-the-art device and novel proposed device are presented. Current device uses a diode laser that emits into a fluorescent fluid only one wavelength and a photodetector diode that detects only one wavelength. Only one type of bacteria can be detected. The proposed device uses a quantum dot array that emits into a fluorescent fluid multiple wavelengths and an NIR 512 spectrometer that scans 0.8- to 1.7-mm wavelengths. Hundreds of different bacteria and viruses can be detected. A novel biomedical device is being developed at the NASA Glenn Research Center in cooperation with the University of Michigan. This device uses nano-structured quantum dots that emit light in the near-infrared (IR) region. The nanostructured quantum dots are used as a source and excite fluorochrome polymers coupled with antibodies that seek out and attach to specific bacteria and viruses. The fluorochrome polymers/antibodies fluoresce at specific wavelengths in the near-IR spectrum, but these wavelengths are offset from the excitation wavelength and can be detected with a tunable spectrometer. The device will be used to detect the presence of viruses and bacteria in simple fluids and eventually in more complex fluids, such as blood. Current state-of-the-art devices are limited to single bacteria or virus detection and a considerable amount of time and effort is required to prepare samples for analysis. Most importantly, the devices are quite large and cumbersome, which prohibits them from being used on the International Space Station and the space shuttles. This novel device uses nanostructured quantum dots which, through molecular beam epitaxy and highly selective annealing processes, can be developed into an illumination source that could potentially generate hundreds of specific wavelengths. As a result, this device will be able to excite hundreds of antibody/fluorochrome polymer combinations, which in turn could be used to detect hundreds of bacteria

  18. [Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

    Science.gov (United States)

    Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

    2010-10-01

    The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

  19. Underwater radiation measuring device

    International Nuclear Information System (INIS)

    Seki, Noriyuki; Suzuki, Yasuo

    1998-01-01

    The present invention provides a device for measuring, under water, radiation from spent fuels (long members to be detected) of nuclear power plants and reprocessing facilities. Namely, a detecting insertion tube (insertion tube) is disposed so as to be in parallel with axial direction of the long member to be detected stored underwater. A γ-ray detector is inserted to the inside of the insertion tube. A driving mechanism is disposed for moving the γ-ray detector in axial direction inside of the insertion tube. The driving mechanism preferably has a system that it moves the γ-ray detector by winding a detection signal cable around a driving drum. The driving mechanism is formed by inserting and securing a driving tube having screws formed on the side surface and inserting it into the insertion tube. It may have a system of moving the γ-ray detector together with the driving tube while engaging the teeth of a driving transfer mechanism with the screws of the driving tube. (I.S.)

  20. Radiation leaking protection device

    International Nuclear Information System (INIS)

    Sunami, Yoshio; Mitsumori, Kojiro

    1980-01-01

    Purpose: To prevent radioactivity from leaking outside of a reactor container by way of pipeways passing therethrough, by supplying pressurized fluid between each of a plurality of valves for separating the pipeways. Constitution: Pressurized fluid is supplied between each of a plurality of valves for separating pipeways. For instance, water in a purified water tank is pressurized by a pressure pump and the pressure of the pressurized water is controlled by a differential pressure detector, a pressure controller and a pressure control valve. In the case if a main steam pipe is ruptured outside of the reactor container or to be repaired, the separation valves are wholly closed and then the pressurizing device is actuated to supply pressurized water containing no radioactivity from the purified water tank to the position between the valves. The pressure in the pressurized water is controlled such that it is always higher by a predetermined level than the pressure in the reactor. This prevents the radioacitivity in the reactor core from leaking outside of the container passing through the valves, whereby radiation exposure in the working can be reduced and the circumferential contamination upon accident of pipeway rupture can be decreased. (Kawakami, Y.)

  1. An assessment of ultraviolet radiation components of light emitted ...

    African Journals Online (AJOL)

    An assessment of ultraviolet radiation components of light emitted from electric arc and their possible exposure risks. ... The study of Ultraviolet Radiation has of recent become interesting because of the health hazards it poses to human. Apart from its intensity reaching the earth from the sun, other man-made sources have ...

  2. Radiation sterilization of medical devices

    International Nuclear Information System (INIS)

    Kaluska, I.; Stuglik, Z.

    1996-01-01

    Overview of sterilization methods of medical devices has been given, with the special stress put on radiation sterilization. A typical validation program for radiation sterilization has been shown and also a comparison of European and ISO standards concerning radiation sterilization has been discussed. (author). 13 refs, 1 fig., 2 tabs

  3. Capturing triplet emission in white organic light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [Faculty of EHSE, School of Engineering and IT, B-purple-12, Charles Darwin University, Darwin, NT 0909 (Australia)

    2011-08-15

    The state-of-the art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new exciton-spin-orbit-photon interaction operator as a perturbation, rates of spontaneous emission are calculated in a few phosphorescent materials and compared with experimental results. For iridium based phosphorescent materials the rates agree quite well with the experimental results. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Device model investigation of bilayer organic light emitting diodes

    International Nuclear Information System (INIS)

    Crone, B. K.; Davids, P. S.; Campbell, I. H.; Smith, D. L.

    2000-01-01

    Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. (c) 2000 American Institute of Physics

  5. Hybrid perovskites: Approaches towards light-emitting devices

    KAUST Repository

    Alias, Mohd Sharizal

    2016-10-06

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

  6. Hybrid perovskites: Approaches towards light-emitting devices

    KAUST Repository

    Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

    2016-01-01

    The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

  7. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    International Nuclear Information System (INIS)

    Lijuan Zou

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

  8. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  9. Radiation shielding device

    International Nuclear Information System (INIS)

    Nakagawa, Takahiro; Yamagami, Makoto.

    1996-01-01

    A fixed shielding member made of a radiation shielding material is constituted in perpendicular to an opening formed on radiation shielding walls. The fixed shielding member has one side opened and has other side, the upper portion and the lower portion disposed in close contact with the radiation shielding walls. Movable shielding members made of a radiation shielding material are each disposed openably on both side of the fixed shielding member. The movable shielding member has a shaft as a fulcrum on one side thereof for connecting it to the radiation shielding walls. The other side has a handle attached for opening/closing the movable shielding member. Upon access of an operator, when each one of the movable shielding members is opened/closed on every time, leakage of linear or scattered radiation can be prevented. Even when both of the movable shielding members are opened simultaneously, the fixed shielding member and the movable shielding members form labyrinth to prevent leakage of linear radioactivity. (I.N.)

  10. Green Fluorescent Organic Light Emitting Device with High Luminance

    Directory of Open Access Journals (Sweden)

    Ning YANG

    2014-06-01

    Full Text Available In this work, we fabricated the small molecule green fluorescent bottom-emission organic light emitting device (OLED with the configuration of glass substrate/indium tin oxide (ITO/Copper Phthalocyanine (CuPc 25 nm/ N,N’-di(naphthalen-1-yl-N,N’-diphenyl-benzidine (NPB 45 nm/ tris(8-hydroxyquinoline aluminium (Alq3 60 nm/ Lithium fluoride (LiF 1 nm/Aluminum (Al 100 nm where CuPc and NPB are the hole injection layer and the hole transport layer, respectively. CuPc is introduced in this device to improve carrier injection and efficiency. The experimental results indicated that the turn-on voltage is 2.8 V with a maximum luminance of 23510 cd/m2 at 12 V. The maximum current efficiency and power efficiency are 4.8 cd/A at 100 cd/m2 and 4.2 lm/W at 3 V, respectively. The peak of electroluminance (EL spectrum locates at 530 nm which is typical emission peak of green light. In contrast, the maximum current efficiency and power efficiency of the device without CuPc are only 4.0 cd/A at 100 mA/cm2 and 4.2 lm/W at 3.6 V, respectively.

  11. Light collection optics for measuring flux and spectrum from light-emitting devices

    Science.gov (United States)

    McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

    2016-05-24

    Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

  12. Radiation dose rate measuring device

    International Nuclear Information System (INIS)

    Sorber, R.

    1987-01-01

    A portable device is described for in-field usage for measuring the dose rate of an ambient beta radiation field, comprising: a housing, substantially impervious to beta radiation, defining an ionization chamber and having an opening into the ionization chamber; beta radiation pervious electrically-conductive window means covering the opening and entrapping, within the ionization chamber, a quantity of gaseous molecules adapted to ionize upon impact with beta radiation particles; electrode means disposed within the ionization chamber and having a generally shallow concave surface terminating in a generally annular rim disposed at a substantially close spacing to the window means. It is configured to substantially conform to the window means to define a known beta radiation sensitive volume generally between the window means and the concave surface of the electrode means. The concave surface is effective to substantially fully expose the beta radiation sensitive volume to the radiation field over substantially the full ambient area faced by the window means

  13. Optical radiation emitted by a silver surface bombarded by low-energy electrons

    International Nuclear Information System (INIS)

    Miserey, F.; Lebon, P.; Septier, A.; Trehin, F.; Beaugrand, C.

    1975-01-01

    Thick silver targets are obtained on flat glass discs by evaporation in a UHV cell (p -10 torr) and their optical coefficients measured by ellipsometry. A field-emission electron gun bombards a limited region of the target, corresponding to the entry pupil of a light spectrometer. Radiation emitted in the domain 250-600nm is analyzed for both normal and parallel polarizations. Spectral distributions of photons are obtained by using a very sensitive counting device including a multi channel analyzer. First experimental results concerning optical radiation generated by 6keV electrons are reported and compared to Transition Radiation and Bremsstrahlung theoretical spectra [fr

  14. Efficiency optimization of green phosphorescent organic light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jung Soo; Jeon, Woo Sik; Yu, Jae Hyung [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Pode, Ramchandra, E-mail: rbpode@khu.ac.k [Department of Physics, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Kwon, Jang Hyuk, E-mail: jhkwon@khu.ac.k [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of)

    2011-03-01

    Using a narrow band gap host of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp{sub 2}) and green phosphorescent Ir(ppy){sub 3} [fac-tris(2-phenylpyridine) iridium III] guest concentration as low as 2%, high efficiency phosphorescent organic light-emitting diode (PHOLED) is realized. Current and power efficiencies of 62.5 cd/A (max.), 51.0 lm/W (max.), and external quantum efficiency (max.) of 19.8% are reported in this green PHOLED. A low current efficiency roll-off value of 10% over the brightness of 10,000 cd/m{sup 2} is noticed in this Bepp{sub 2} single host device. Such a high efficiency is obtained by the optimization of the doping concentration with the knowledge of the hole trapping and the emission zone situations in this host-guest system. It is suggested that the reported device performance is suitable for applications in high brightness displays and lighting.

  15. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  16. Practical silicon Light emitting devices fabricated by standard IC technology

    International Nuclear Information System (INIS)

    Aharoni, H.; Monuko du Plessis; Snyman, L.W.

    2004-01-01

    Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

  17. Radiation sensitive solid state devices

    International Nuclear Information System (INIS)

    Shannon, J.M.; Ralph, J.E.

    1975-01-01

    A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections. (auth)

  18. Radiation area monitor device and method

    Science.gov (United States)

    Vencelj, Matjaz; Stowe, Ashley C.; Petrovic, Toni; Morrell, Jonathan S.; Kosicek, Andrej

    2018-01-30

    A radiation area monitor device/method, utilizing: a radiation sensor; a rotating radiation shield disposed about the radiation sensor, wherein the rotating radiation shield defines one or more ports that are transparent to radiation; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor. The device/method selectively operates in: a first supervised mode during which a baseline radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor; and a second unsupervised mode during which a subsequent radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor, wherein the subsequent radiation fingerprint is compared to the baseline radiation fingerprint and, if a predetermined difference threshold is exceeded, an alert is issued.

  19. Act of 21 February 1963, Stb. 82, concerning the release of nuclear energy and the use of radioactive materials and of devices emitting ionizing radiations (Nuclear Energy Act) as amended by the Act of 30 June 1967, Stb. 337, and the Act of 8 May 1974, Stb. 291

    International Nuclear Information System (INIS)

    1963-01-01

    This basic Act governs all nuclear activities in the Netherlands and determines the Government's competence and the obligations of those involved in the nuclear field. It establishes definitions and sets up bodies to advise the Government in the different nuclear sectors and covers nuclear installations, fissionable materials, ores, radioactive materials, radiation-emitting devices and their licensing. It was brought into force progressively by decrees made in implementation of its provisions, which lay down detailed regulations for the activity concerned. The chapters of the Act not yet in force were brought into operation on 1 January 1970 by the Nuclear Energy Act (Implantation) Decree of 12 November 1969. (NEA) [fr

  20. Radiation detector device for measuring ionizing radiation

    International Nuclear Information System (INIS)

    Brake, D. von der.

    1983-01-01

    The device contains a compensating filter circuit, which guarantees measurement of the radiation dose independent of the energy or independent of the energy and direction. The compensating filter circuit contains a carrier tube of a slightly absorbing metal with an order number not higher than 35, which surrounds a tubular detector and which carries several annular filter parts on its surface. (orig./HP) [de

  1. Advanced light emitting device structures for optoelectronic applications

    International Nuclear Information System (INIS)

    Kovac, J.

    2002-01-01

    Several factors are driving the recent development of light emitting devices (LED,s). The most important ones are brightness, available efficiency, architecture form flexibility, rugged construction and low applied voltages. These are contributing to growth in markets such as traffic lights, automotive brake signals and instrument displays, video displays, traffic signals, decorative signs and the many uses of the new white LED-based products. A new developments are directed to various materials used for high brightness HB-LED,s based on AlGaAs (red), AlInGaP (yellow-green to red) and InGaN (blue, green and white) devices. The development of LED,s depends on epitaxial growth advances, mainly molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). As a technology improved, the performace of visible LED,s increased at the rate 10x per decade from less than 0.1 lm/W to the best red and orange LED,s now providing about 100 lm/W. The main engineering challenge is now the extraction or the ability to get all the light out of the chip to where it is needed. This has led to novel changes in the shape of the LED chip and to the replacement of GaAs with transparent GaP substrate throught wafer bonding after the LED has been produced. Most of the focus for nitride devices (InGaN) is to develop improved or new substrate materials to replace sapphire and enable the growth of lower defect density materials. Organic LED,s (OLED,s) have been undergone dramatic improvements in performace in the last five years. Two main technologies for OLED,s have emerged in the last decade, either based on conjaguated polymers, or sublimed films of small molecules. Recent improvements have taken OLED,s to luminous efficiency greater than 20 lm/W. However, in contrast to conventional LED,s, OLED,s share many of the properties associated with other organic substances and polymers. They allow more design flexibility than inorganic LED,s and thus lead to the high

  2. In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

    Science.gov (United States)

    Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

    2017-04-25

    Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

  3. Radiative flux emitted by a burning PMMA slab

    International Nuclear Information System (INIS)

    Parent, G; Acem, Z; Collin, A; Berfroi, R; Boulet, P; Pizzo, Y; Mindykowski, P; Kaiss, A; Porterie, B

    2012-01-01

    The degradation of a PMMA sample has been studied based on experimental results obtained for the radiation emission by a burning slab. Observations of the infrared emission perpendicular to the plate, in the range where the optically thin flame is weakly emitting, indicate a plate temperature close to 680 K which is an indication on the surface temperature during the degradation process. Observations from the side allow a flame characterization without the plate emission superimposition. This is a promising way for evaluating data regarding the flame characteristics: temperature, gaz concentration and soot volumetric fraction.

  4. Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

    KAUST Repository

    Yang, Xiaohui

    2013-08-01

    We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4-4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host show the peak external quantum efficiency of 4.5% and Commission Internationale d\\'Énclairage (CIE) coordinates of (0.15, 0.07). Hybrid white devices using fluorescent blue emitting layer with 1 and a phosphorescent orange emitting layer based on an iridium-complex show the peak external quantum efficiency above 10% and CIE coordinates of (0.31, 0.37). © 2013 Published by Elsevier B.V.

  5. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  6. Study of organic light emitting devices (OLEDs) with optimal emission efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and IT, B-purple 12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

    2010-04-15

    The external emission efficiency of organic light emitting devices (OLEDs) is analysed by studying the rate of spontaneous emission of both singlet and triplet excitons and their corresponding radiative lifetimes. Rates of spontaneous emissions are calculated from the first order perturbation theory using the newly discovered time-dependent spin-orbit-exciton-photon interaction operator as the perturbation operator. It is clearly shown how the new interaction operator is responsible for attracting triplet excitons to a phosphor (heavy metal atom) and then it flips the spins to a singlet configuration. Thus, the spin forbidden transition becomes spin allowed. Calculated rates agree with the experimental results qualitatively. Results are of general interests for OLED studies. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Reading device of a radiation image contained in a radioluminescent screen and tomography device containing it

    International Nuclear Information System (INIS)

    Allemand, R.; Cuzin, M.; Parot, P.

    1984-01-01

    The present invention is aimed at improving the random access time to a stimulable radioluminescent screen point (and consequently the reading time of the screen image); it is noticeably useful for longitudinal tomography. The reading device contains a source emitting a stimulation radiation beam towards the stimulable radioluminescent screen, a control mean of the stimulation radiation beam and a deflection mean which allows the beam to scan the screen surface. The device is characterized by the use of a very fast acousto-optical type deflection mean [fr

  8. Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

    National Research Council Canada - National Science Library

    Steckl, Andrew

    2006-01-01

    Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

  9. Light-Emitting Devices Based on Pyridine-Containing Conjugated Polymers

    National Research Council Canada - National Science Library

    Wang, Y

    1997-01-01

    ...) as hole transporting/electron blocking polymer, which improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

  10. Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

    KAUST Repository

    Yang, Xiaohui; Zheng, Shijun; Bottger, Rebecca; Chae, HyunSik; Tanaka, Takeshi; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

    2011-01-01

    We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency

  11. Photon extraction from nitride ultraviolet light-emitting devices

    Science.gov (United States)

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  12. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  13. Nanocrystalline silicon as the light emitting material of a field emission display device

    International Nuclear Information System (INIS)

    Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

    2008-01-01

    A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

  14. Radiation analysis devices, radiation analysis methods, and articles of manufacture

    Science.gov (United States)

    Roybal, Lyle Gene

    2010-06-08

    Radiation analysis devices include circuitry configured to determine respective radiation count data for a plurality of sections of an area of interest and combine the radiation count data of individual of sections to determine whether a selected radioactive material is present in the area of interest. An amount of the radiation count data for an individual section is insufficient to determine whether the selected radioactive material is present in the individual section. An article of manufacture includes media comprising programming configured to cause processing circuitry to perform processing comprising determining one or more correction factors based on a calibration of a radiation analysis device, measuring radiation received by the radiation analysis device using the one or more correction factors, and presenting information relating to an amount of radiation measured by the radiation analysis device having one of a plurality of specified radiation energy levels of a range of interest.

  15. Organic light-emitting devices with fullerene/aluminum composite anode

    International Nuclear Information System (INIS)

    Song, Q.L.; Li, C.M.; Wang, M.L.; Sun, X.Y.

    2008-01-01

    Our previous work demonstrates that fullerene/Aluminum (C 60 /Al) can be used as a composite anode in organic solar cells. In this work, we report that an organic light emitting devices (OLEDs) can be made with the C 60 /Al composite anode as well. The OLEDs show comparable current density and brightness to the traditional devices with the indium tin oxide anode

  16. White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

    International Nuclear Information System (INIS)

    Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

    2007-01-01

    A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

  17. Continuum radiation emitted from transition metals under ion bombardment

    International Nuclear Information System (INIS)

    El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

    2012-01-01

    Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

  18. Full color organic light-emitting devices with microcavity structure and color filter.

    Science.gov (United States)

    Zhang, Weiwei; Liu, Hongyu; Sun, Runguang

    2009-05-11

    This letter demonstrated the fabrication of the full color passive matrix organic light-emitting devices based on the combination of the microcavity structure, color filter and a common white polymeric OLED. In the microcavity structure, patterned ITO terraces with different thickness were used as the anode as well as cavity spacer. The primary color emitting peaks were originally generated by the microcavity and then the second resonance peak was absorbed by the color filter.

  19. Organic light emitting device architecture for reducing the number of organic materials

    Science.gov (United States)

    D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

    2011-10-18

    An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

  20. Instense red phosphors for UV light emitting diode devices.

    Science.gov (United States)

    Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

    2010-03-01

    Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

  1. Silicon solid state devices and radiation detection

    CERN Document Server

    Leroy, Claude

    2012-01-01

    This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

  2. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    Energy Technology Data Exchange (ETDEWEB)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

  3. A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

    International Nuclear Information System (INIS)

    Pailharey, Eric

    2000-01-01

    The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

  4. RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

    Directory of Open Access Journals (Sweden)

    Dhiyauddin Ahmad Fauzi

    2017-05-01

    Full Text Available In addition to their useful optoelectronics functions, gallium nitride (GaN and quantum dots (QDs based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED and InAs/GaAs dot-in-a well (DWELL samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V and capacitance-voltage (C-V electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

  5. Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

    Energy Technology Data Exchange (ETDEWEB)

    Reinke, Nils [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)]. E-mail: nils.reinke@physik.uni-augsburg.de; Fuhrmann, Thomas [Macromolecular Chemistry and Molecular Materials, University of Kassel (Germany); Perschke, Alexandra [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany); Franke, Hilmar [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)

    2004-12-10

    In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N'-bis (4-phenyl)-N, N'-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq{sub 3}:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.

  6. Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

    KAUST Repository

    Yang, Xiaohui

    2011-07-28

    We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency of 4.1% and Commission Internationale dÉnclairage coordinates of (0.16, 0.05). Efficient deep-blue emission as well as high triplet state energy of Cz-2pbb enables fabrication of hybrid white organic light emitting diodes with a single emissive layer. Hybrid white emitting devices based on Cz-2pbb show the peak external quantum efficiency exceeding 10% and power efficiency of 14.8 lm/W at a luminance of 500 cd/m2. © 2011 American Chemical Society.

  7. Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

    Science.gov (United States)

    Park, So-Ra; Suh, Min Chul

    2018-02-19

    To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

  8. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  9. Interband cascade light emitting devices based on type-II quantum wells

    International Nuclear Information System (INIS)

    Yang, Rui Q.; Lin, C.H.; Murry, S.J.

    1997-01-01

    The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 μm)

  10. Radiation hardening of MOS devices by boron

    International Nuclear Information System (INIS)

    Danchenko, V.

    1975-01-01

    A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

  11. Conducted and radiated noise in detection devices

    International Nuclear Information System (INIS)

    Moisa, D.

    2001-01-01

    Conducted and radiated noise is an external noise which affects the quality of the signals of the detectors. An external noise can be reduced, usually, by shielding. This was the situation with 'older fashion' devices which uses boxes and coaxial cables. As the devices becomes more complex, the shielding of the detectors is more and more difficult and the transmission lines evolves from coaxial cables to twisted pair cables which are no more shielded. In such situation, the conducted and radiated noise (C and R noise) becomes important. Due to complexity of a real detector, the main work is based on experiments with components and simulations of some specific problems, associated with CDC detector. The first experiment was done to understand how the C and R noise is propagated. The emission device was a set of coils (between 3 and 5 turns with diameter from 10 to 50 mm) feed by an 74S140 driver. A pulse of about 8 ns width was generated. A coil of reception of about the same physical characteristics was used to see the emitted pulse. When the two coils are separated by about 80 cm, the receiver generated no signal. But, if along the two coils, a conductive material is introduced (a wire for instance), the receiver senses a signal. This signal is not changed too much if the wire is or not connected to ground. The explanation is simple: the pulse in the emitting coil produces an EM pulse which spreads in space. If a conductive material is around, the EM energy is received by that conductor and it is propagated at tens of meters with small attenuation. When this energy reaches the end of the conductor, it is radiated in space. If some other conductors are around, the energy is received and propagated by that conductors. This experiment was done for about 20 kinds of conductors (different coax cables, twisted-pair ribbons, power cables, metallic bars) and with many coils (different diameters and numbers of turns). It was measured the pk-to-pk level, decay constant and

  12. Influence of doping location and width of dimethylquinacridone on the performance of organic light emitting devices

    International Nuclear Information System (INIS)

    Li Jingze; Yahiro, Masayuki; Ishida, Kenji; Matsushige, Kazumi

    2005-01-01

    The influence of doping location and width of fluorescent dimethylquinacridone (DMQA) molecules on the performance of organic light emitting devices has been systematically investigated. While the doped zone is located at the interface of the hole transport layer (HTL) and the light emitting layer (EML), doping in the HTL leads to significant improvement of the external quantum efficiency relative to the undoped device, whereas the efficiency is lower than that of doping in the EML. This phenomenon is explained according to the electroluminescence (EL) process of the doped DMQA, which is dominated by Foerster energy transfer. Additionally, a device with dual doping in both HTL and EML exhibits the highest efficiency. The EL and photoluminescence spectra are also dependent on the doping sites

  13. White organic light-emitting devices with high color purity and stability

    International Nuclear Information System (INIS)

    Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

    2014-01-01

    A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq 3 (20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm −2  at the applied voltage of 13.4 V and Commission International de 1′Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIE x, y = 0.0171, 0.0167; corresponding Δu′v′ = 0.0119) when the current density increases from 10 to 100 mA cm −2 . It reveals that the emissive dopant Rb acts as charge traps to improve electron–hole balance, provides sites for electron–hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates. (paper)

  14. White organic light-emitting devices with high color purity and stability

    Science.gov (United States)

    Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

    2014-04-01

    A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

  15. Method and device for controlling radiation

    International Nuclear Information System (INIS)

    Wilhelm, G.M.

    1979-01-01

    A device which will control radiation emanating from colour television sets is described. It consists of two transparent plates the same size as a television screen, with a thin layer of transparent mineral oil sealed between them. The device may be installed by the manufacturer or bought separately and installed by the user. (LL)

  16. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  17. Efficient organic light-emitting devices with platinum-complex emissive layer

    KAUST Repository

    Yang, Xiaohui

    2011-01-18

    We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

  18. Study on scalable Coulombic degradation for estimating the lifetime of organic light-emitting devices

    International Nuclear Information System (INIS)

    Zhang Wenwen; Hou Xun; Wu Zhaoxin; Liang Shixiong; Jiao Bo; Zhang Xinwen; Wang Dawei; Chen Zhijian; Gong Qihuang

    2011-01-01

    The luminance decays of organic light-emitting diodes (OLEDs) are investigated with initial luminance of 1000 to 20 000 cd m -2 through a scalable Coulombic degradation and a stretched exponential decay. We found that the estimated lifetime by scalable Coulombic degradation deviates from the experimental results when the OLEDs work with high initial luminance. By measuring the temperature of the device during degradation, we found that the higher device temperatures will lead to instabilities of organic materials in devices, which is expected to result in the difference between the experimental results and estimation using the scalable Coulombic degradation.

  19. Efficient organic light-emitting devices with platinum-complex emissive layer

    KAUST Repository

    Yang, Xiaohui; Wu, Fang-Iy; Haverinen, Hanna; Li, Jian; Cheng, Chien-Hong; Jabbour, Ghassan E.

    2011-01-01

    We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

  20. Radiation detection device and a radiation detection method

    International Nuclear Information System (INIS)

    Blum, A.

    1975-01-01

    A radiation detection device is described including at least one scintillator in the path of radiation emissions from a distributed radiation source; a plurality of photodetectors for viewing each scintillator; a signal processing means, a storage means, and a data processing means that are interconnected with one another and connected to said photodetectors; and display means connected to the data processing means to locate a plurality of radiation sources in said distributed radiation source and to provide an image of the distributed radiation sources. The storage means includes radiation emission response data and location data from a plurality of known locations for use by the data processing means to derive a more accurate image by comparison of radiation responses from known locations with radiation responses from unknown locations. (auth)

  1. Device for detecting ionizing radiation

    International Nuclear Information System (INIS)

    Anatychuk, L.I.; Kharitonov, J.P.; Kusniruk, V.F.; Meir, V.A.; Melnik, A.P.; Ponomarev, V.S.; Skakodub, V.A.; Sokolov, A.D.; Subbotin, V.G.; Zhukovsky, A.N.

    1980-01-01

    The present invention relates to ionizing radiation sensors, and , more particularly, to semiconductor spectrometers with thermoelectric cooling, and can most advantageously be used in mineral raw material exploration and evaluation under field conditions. The spectrometer comprises a vacuum chamber with an entrance window for passing the radiation therethrough. The vacuum chamber accommodates a thermoelectric cooler formed by a set of peltier elements. A heat conducting plate is mounted on the cold side of the thermoelectric cooler, and its hot side is provided with a radiator. Mounted on the heat conducting plate are sets of peltier elements, integral with the thermoelectric cooler and independent of one another. The peltier elements of these sets are stacked so as to develop the minimum temperature conditions on one set carrying a semiconductor detector and to provide the maximum refrigeration capacity conditions on the other set provided with the field-effect transistor mounted thereon

  2. GaN light-emitting device based on ionic liquid electrolyte

    Science.gov (United States)

    Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

    2018-06-01

    Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

  3. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties

    Directory of Open Access Journals (Sweden)

    Inge Verboven

    2018-02-01

    Full Text Available To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm/barium titanate (10 µm/zinc-oxide (10 µm and poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (10 µm. Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm as smoothing layer/silver (200 nm/poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (35 nm/super yellow (80 nm/calcium/aluminum (12/17 nm. Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

  4. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

    Science.gov (United States)

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

    2018-01-01

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

  5. Efficient light-emitting devices based on platinum-complexes-anchored polyhedral oligomeric silsesquioxane materials

    KAUST Repository

    Yang, Xiaohui

    2010-08-24

    The synthesis, photophysical, and electrochemical characterization of macromolecules, consisting of an emissive platinum complex and carbazole moieties covalently attached to a polyhedral oligomeric silsesquioxane (POSS) core, is reported. Organic light-emitting devices based on these POSS materials exhibit a peak external quantum efficiency of ca. 8%, which is significantly higher than that of the analogous devices with a physical blend of the platinum complexes and a polymer matrix, and they represent noticeable improvement in the device efficiency of solution-processable phosphorescent excimer devices. Furthermore, the ratio of monomer and excimer/aggregate electroluminescent emission intensity, as well as the device efficiency, increases as the platinum complex moiety presence on the POSS macromolecules decreases. © 2010 American Chemical Society.

  6. Devices for obtaining information about radiation sources

    International Nuclear Information System (INIS)

    Tosswill, C.H.

    1981-01-01

    The invention provides a sensitive, fast high-resolution device for obtaining information about the distribution of gamma and X-radiation sources and provides a radiation detector useful in such a device. It comprises a slit collimator with a multiplicity of slits each with slit-defining walls of material and thickness to absorb beam components impinging on them. The slits extend further in one direction than the other. The detector for separately detecting beam components passing through the slits also provides data output signals. It comprises a plurality of radiation transducing portions which are not photoconductor elements each at the end of a slit. A positioner operates to change the transverse position of the slits and radiation transducing portions relative to the source, wherein each radiation transducing element is positioned within its respective slit between the slit defining walls. Full details and preferred embodiments are given. (U.K.)

  7. Controlled light emission from white organic light-emitting devices with a single blue-emitting host and multiple fluorescent dopants

    International Nuclear Information System (INIS)

    Chin, Byung Doo; Kim, Jai Kyeong; Park, O Ok

    2007-01-01

    In this work, we fabricated white organic light-emitting devices (WOLEDs) containing a layered light-emitting region composed of a single blue-emitting host and different fluorescent dopant materials. The effects of varying the dye-doping ratio and emitting layer thickness on the efficiency, lifetime, spectral voltage-dependence and white balance were investigated for devices with a blue/orange stacked layer structure. Addition of a blue host layer doped with a green-emitting dopant, to give a blue/green/orange emitter, resulted in a broadband white spectrum without the need for a charge-blocking interlayer. The composition of blue, green and orange dopants in the host and the thickness of each emitting layer were optimized, resulting in a device efficiency of 9-11 cd A -1 even at a high brightness of 10 000 cd m -2 (achieved at a bias voltage of less than 9 V) with an emission spectrum suitable for lighting applications

  8. Improved light extraction from white organic light-emitting devices using a binary random phase array

    Energy Technology Data Exchange (ETDEWEB)

    Inada, Yasuhisa, E-mail: inada.yasuhisa@jp.panasonic.com; Nishiwaki, Seiji; Hirasawa, Taku; Nakamura, Yoshitaka; Hashiya, Akira; Wakabayashi, Shin-ichi; Suzuki, Masa-aki [R and D Division, Panasonic Corporation, 1006 Kadoma, Kadoma City, Osaka 571-8501 (Japan); Matsuzaki, Jumpei [Device Development Center, Eco Solutions Company, Panasonic Corporation, 1048 Kadoma, Osaka 571-8686 Japan (Japan)

    2014-02-10

    We have developed a binary random phase array (BRPA) to improve the light extraction performance of white organic light-emitting devices (WOLEDs). We demonstrated that the scattering of incoming light can be controlled by employing diffraction optics to modify the structural parameters of the BRPA. Applying a BRPA to the substrate of the WOLED leads to enhanced extraction efficiency and suppression of angle-dependent color changes. Our systematic study clarifies the effect of scattering on the light extraction of WOLEDs.

  9. Improved light extraction from white organic light-emitting devices using a binary random phase array

    International Nuclear Information System (INIS)

    Inada, Yasuhisa; Nishiwaki, Seiji; Hirasawa, Taku; Nakamura, Yoshitaka; Hashiya, Akira; Wakabayashi, Shin-ichi; Suzuki, Masa-aki; Matsuzaki, Jumpei

    2014-01-01

    We have developed a binary random phase array (BRPA) to improve the light extraction performance of white organic light-emitting devices (WOLEDs). We demonstrated that the scattering of incoming light can be controlled by employing diffraction optics to modify the structural parameters of the BRPA. Applying a BRPA to the substrate of the WOLED leads to enhanced extraction efficiency and suppression of angle-dependent color changes. Our systematic study clarifies the effect of scattering on the light extraction of WOLEDs

  10. Radiation effects in charge coupled devices

    International Nuclear Information System (INIS)

    Williams, R.A.; Nelson, R.D.

    1975-01-01

    Charge coupled devices (CCD s) exhibit a number of advantages (low cost, low power, high bit density) in their several applications (serial memories, imagers, digital filters); however, fairly elementary theoretical considerations indicate that they will be very vulnerable to permanent radiation damage, by both neutrons and ionizing radiation, and to transient upset by pulsed ionizing radiation. Although studies of permanent ionizing-radiation damage in CCD's have been reported, little information has been published concerning their overall nuclear radiation vulnerability. This paper presents a fairly comprehensive experimental study of radiation effects in a 256-cell surface-channel, CCD shift-register. A limited amount of similar work is also presented for a 128-cell surface-channel device and a 130 cell peristaltic CCD shift register. The radiation effects phenomena discussed herein, include transient-ionizing-radiation responses, permanent ionizing- radiation damage to transfer efficiency, charge-carrying capacity and input transfer gate bias, and neutron damage to storage time--determined from dark current and charge-up time measurements

  11. Prospects of radiation sterilization of medical devices

    International Nuclear Information System (INIS)

    Hosobuchi, Kazunari

    1992-01-01

    Since radiation sterilization was first introduced in the United States in 1956 in the field of disposable medical devices, it has become an indispensable technique for sterilization because of the following reasons: (1) introduction into dialyzers, (2) introduction in medical device makers, (3) development of disposable medical devices associated with developing both high molecular chemistry and cool sterilization, (4) rationality of sterilization process, and (5) problems of sterilization with ethylene oxide gas. To promote the further development of radiation sterilization, the following items are considered necessary: (1) an increase in the number of facilities for radiation sterilization, (2) recommendation of the international standardization of sterilization method, (3) decrease in radiation doses associated with sterilization, (4) development of electron accelerators and bremsstrahlung equipments for radiation sources, and (5) simplification of sterilization process management. Factors precluding the development of radiation sterilization are: (1) development of other methods than radiation sterilization, (2) development of technique for sterile products, (3) high facility cost, (4) high irradiation cost, (5) benefits and limits of sterilization markets, and (6) influences of materials. (N.K.)

  12. Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

    International Nuclear Information System (INIS)

    Song, Hongjoo; Lee, Seonghoon

    2007-01-01

    We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device

  13. Influence of ITO patterning on reliability of organic light emitting devices

    International Nuclear Information System (INIS)

    Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

    2009-01-01

    Indium tin oxide (ITO) films are widely used for a transparent electrode of organic light emitting devices (OLEDs) because of its excellent conductivity and transparency. Two types of ITO substrates with different surface roughness were selected to use as anode of OLEDs. In addition, two types of etching process of ITO substrate, particularly the etching time, were also carried out. It was found that the surface roughness and/or the etching process of ITO substrate strongly influenced on an edge of ITO surface, further affected the operating characteristics and reliability of devices.

  14. Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Dan; Duan, Yahui; Yang, Yongqiang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Hu, Nan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Wang, Xiao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Sun, Fengbo [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Duan, Yu, E-mail: duanyu@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China)

    2015-10-15

    In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C{sup 2'}) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors.

  15. Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

    International Nuclear Information System (INIS)

    Yang, Dan; Duan, Yahui; Yang, Yongqiang; Hu, Nan; Wang, Xiao; Sun, Fengbo; Duan, Yu

    2015-01-01

    In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C 2' ) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors

  16. Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

    Science.gov (United States)

    Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

    2018-02-01

    We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

  17. Devices for obtaining information about radiation sources

    International Nuclear Information System (INIS)

    Tosswill, C.H.

    1981-01-01

    The invention provides a sensitive, fast, high-resolution device for obtaining information about the distribution of gamma and X-radiation sources and provides a radiation detector useful in such a device. It comprises a slit collimator with a multiplicity of slits each with slit-defining walls of material and thickness to absorb beam components impinging on them. The slits extend further in one transverse direction than the other. The detector for separately detecting beam components passing through the slits also provides data output signals. It comprises a plurality of radiation transducing portions, each at the end of a slit. A positioner changes the transverse position of the slits and radiation transducer (a photoconductor) relative to the source. Applications are in nuclear medicine and industry. Full details and preferred embodiments are given. (U.K.)

  18. An image scanning device using radiating energy

    International Nuclear Information System (INIS)

    Jacob, Daniel.

    1976-01-01

    Said invention relates to an image scanning device using radiating energy. More particularly, it relates to a device for generating a scanning beam of rectangular cross section from a γ or X-ray source. Said invention can be applied to radiographic units of the 'microdose' type used by airline staffs and others for the fast efficient inspection of luggage and parcels in view of detecting hidden things [fr

  19. Advanced Small Animal Conformal Radiation Therapy Device.

    Science.gov (United States)

    Sharma, Sunil; Narayanasamy, Ganesh; Przybyla, Beata; Webber, Jessica; Boerma, Marjan; Clarkson, Richard; Moros, Eduardo G; Corry, Peter M; Griffin, Robert J

    2017-02-01

    We have developed a small animal conformal radiation therapy device that provides a degree of geometrical/anatomical targeting comparable to what is achievable in a commercial animal irradiator. small animal conformal radiation therapy device is capable of producing precise and accurate conformal delivery of radiation to target as well as for imaging small animals. The small animal conformal radiation therapy device uses an X-ray tube, a robotic animal position system, and a digital imager. The system is in a steel enclosure with adequate lead shielding following National Council on Radiation Protection and Measurements 49 guidelines and verified with Geiger-Mueller survey meter. The X-ray source is calibrated following AAPM TG-61 specifications and mounted at 101.6 cm from the floor, which is a primary barrier. The X-ray tube is mounted on a custom-made "gantry" and has a special collimating assembly system that allows field size between 0.5 mm and 20 cm at isocenter. Three-dimensional imaging can be performed to aid target localization using the same X-ray source at custom settings and an in-house reconstruction software. The small animal conformal radiation therapy device thus provides an excellent integrated system to promote translational research in radiation oncology in an academic laboratory. The purpose of this article is to review shielding and dosimetric measurement and highlight a few successful studies that have been performed to date with our system. In addition, an example of new data from an in vivo rat model of breast cancer is presented in which spatially fractionated radiation alone and in combination with thermal ablation was applied and the therapeutic benefit examined.

  20. Male reproductive health under threat: Short term exposure to radiofrequency radiations emitted by common mobile jammers

    Directory of Open Access Journals (Sweden)

    SMJ Mortazavi

    2013-01-01

    Full Text Available Background: Modern life prompted man to increasingly generate, transmit and use electricity that leads to exposure to different levels of electromagnetic fields (EMFs. Substantial evidence indicates that exposure to common sources of EMF such as mobile phones, laptops or wireless internet-connected laptops decreases human semen quality. In some countries, mobile jammers are occasionally used in offices, shrines, conference rooms and cinemas to block the signal. Aims: To the best of our knowledge, this is the first study to investigate the effect of short term exposure of human sperm samples to radiofrequency (RF radiations emitted by common mobile jammers. Subjects and Methods: Fresh semen samples were collected by masturbation from 30 healthy donors who had referred to Infertility Treatment Center at the Mother and Child Hospital with their wives. Female problem was diagnosed as the reason for infertility in these couples. Statistical Analysis: T-test and analysis of variance were used to show statistical significance. Results: The motility of sperm samples exposed to jammer RF radiation for 2 or 4 h were significantly lower than those of sham-exposed samples. These findings lead us to the conclusion that mobile jammers may significantly decrease sperm motility and the couples′ chances of conception. Conclusion: Based on these results, it can be suggested that in countries that have not banned mobile jammer use, legislations should be urgently passed to restrict the use of these signal blocking devices in public or private places.

  1. Male reproductive health under threat: Short term exposure to radiofrequency radiations emitted by common mobile jammers

    Science.gov (United States)

    Mortazavi, SMJ; Parsanezhad, ME; Kazempour, M; Ghahramani, P; Mortazavi, AR; Davari, M

    2013-01-01

    BACKGROUND: Modern life prompted man to increasingly generate, transmit and use electricity that leads to exposure to different levels of electromagnetic fields (EMFs). Substantial evidence indicates that exposure to common sources of EMF such as mobile phones, laptops or wireless internet-connected laptops decreases human semen quality. In some countries, mobile jammers are occasionally used in offices, shrines, conference rooms and cinemas to block the signal. AIMS: To the best of our knowledge, this is the first study to investigate the effect of short term exposure of human sperm samples to radiofrequency (RF) radiations emitted by common mobile jammers. SUBJECTS AND METHODS: Fresh semen samples were collected by masturbation from 30 healthy donors who had referred to Infertility Treatment Center at the Mother and Child Hospital with their wives. Female problem was diagnosed as the reason for infertility in these couples. STATISTICAL ANALYSIS: T-test and analysis of variance were used to show statistical significance. RESULTS: The motility of sperm samples exposed to jammer RF radiation for 2 or 4 h were significantly lower than those of sham-exposed samples. These findings lead us to the conclusion that mobile jammers may significantly decrease sperm motility and the couples’ chances of conception. CONCLUSION: Based on these results, it can be suggested that in countries that have not banned mobile jammer use, legislations should be urgently passed to restrict the use of these signal blocking devices in public or private places. PMID:24082653

  2. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    International Nuclear Information System (INIS)

    Kwang-Ohk Cheon

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance

  3. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

  4. On the Properties and Design of Organic Light-Emitting Devices

    Science.gov (United States)

    Erickson, Nicholas C.

    Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

  5. Midinfrared radiation energy harvesting device

    Science.gov (United States)

    Lin, Hong-Ren; Wang, Wei-Chih

    2017-07-01

    The International Energy Agency reports a 17.6% annual growth rate in sustainable energy production. However, sustainable power generation based on environmental conditions (wind and solar) requires an infrastructure that can handle intermittent power generation. An electromagnetic thermoelectric (EMTE) device to overcome the intermittency problems of current sustainable energy technologies, providing the continuous supply unachievable by photovoltaic cells with portability impossible for traditional thermoelectric (TE) generators, is proposed. The EMTE converts environmental electromagnetic waves to a voltage output without requiring additional input. A single cell of this TE-inspired broadband EMTE can generate a 19.50 nV output within a 7.2-μm2 area, with a verified linear scalability of the output voltage through cell addition. This idea leads to a challenge: the electrical polarity of each row of cells is the same but may require additional routing to combine output from each row. An innovative layout is proposed to overcome this issue through switching the electrical polarity every other row. In this scheme, the EM wave absorption spectrum is not altered, and a simple series connection can be implemented to boost the total voltage output by 1 order within a limited area.

  6. EMERGENCY RADIATION SURVEY DEVICE ONBOARD THE UAV

    Directory of Open Access Journals (Sweden)

    S. Bogatov

    2013-08-01

    Full Text Available Radiation survey device (RSD on the base of unmanned aerial vehicle (UAV was developed as an equipment of rescue forces for radiation situation reconnaissance in case of emergency. RSD is multi range radiometer with spectrometer functions capable to work within gamma ray fields of dose rate 10–7 – 10–1 Sievert per hour. UAV md4-1000 (Microdrones GmbH, Germany was selected as the RSD carrier as a reliable vehicle with appropriate properties. Short description of RSD, UAV and developed software features as well as sensitivity assessments for different radiation sources are presented.

  7. Bigger, Brighter, Bluer-Better?Current light-emitting devices- adverse sleep properties and preventative strategies.

    Directory of Open Access Journals (Sweden)

    Paul eGringras

    2015-10-01

    Full Text Available ObjectiveIn an effort to enhance the efficiency, brightness and contrast of light-emitting (LE devices during the day, displays often generate substantial short-wavelength (blue-enriched light emissions that can adversely affect sleep. We set out to verify the extent of such short-wavelength emissions, produced by a tablet (iPad Air, e-reader (Kindle Paperwhite 1st generation and smartphone (iPhone 5s and to determine the impact of strategies designed to reduce these light emissions. SettingUniversity of Surrey dedicated chronobiology facility.MethodsFirstly, the spectral power of all the light-emitting (LE devices was assessed when displaying identical text. Secondly, we compared the text output with that of ‘Angry Birds’-a popular top 100 ‘App Store’ game. Finally we measured the impact of two strategies that attempt to reduce the output of short-wavelength light emissions. The first strategy employed an inexpensive commercially available pair of orange-tinted ‘blue-blocking’ glasses. The second tested an app designed to be ‘sleep-aware’ whose designers deliberately attempted to reduce blue-enriched light emissions.ResultsAll the LE devices shared very similar enhanced blue-light peaks when displaying text. This included the output from the backlit Kindle Paperwhite device. The spectra when comparing text to the Angry Birds game were also very similar, although the

  8. Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li, Taiwan 32061 (China)

    2011-09-01

    Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m{sup 2}) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

  9. Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

    International Nuclear Information System (INIS)

    Chang, Chih-Hao; Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh; Chang, Hsin-Hua

    2011-01-01

    Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m 2 ) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

  10. Medical device for applying therapeutic radiation

    International Nuclear Information System (INIS)

    Tokita, K.M.; Haller, B.L.

    1986-01-01

    A device is described for applying therapeutic radiation from a preselected radiation source to a predetermined portion of a body comprising, in combination: a body member having: an external peripheral surface; a first end surface; and a second end surface spaced from the first end surface; the body member further comprising: at least first internal walls defining a first radiation source receiving channel means spaced a preselected distance from the peripheral surface, and having: a first portion extending from the second end surface to regions adjacent the first end surface; and a second portion extending from the first portion at the first end surface to the second end surface; and, the channel means communicating with regions external the body member at the second surface whereby the radiation source of a preselected intensity inserted at least along a preselected portion of the channel means is applied to the predetermined area of the body requiring therapeutic radiation treatment

  11. Radiation sensitive area detection device and method

    Science.gov (United States)

    Carter, Daniel C. (Inventor); Hecht, Diana L. (Inventor); Witherow, William K. (Inventor)

    1991-01-01

    A radiation sensitive area detection device for use in conjunction with an X ray, ultraviolet or other radiation source is provided which comprises a phosphor containing film which releases a stored diffraction pattern image in response to incoming light or other electromagnetic wave. A light source such as a helium-neon laser, an optical fiber capable of directing light from the laser source onto the phosphor film and also capable of channelling the fluoresced light from the phosphor film to an integrating sphere which directs the light to a signal processing means including a light receiving means such as a photomultiplier tube. The signal processing means allows translation of the fluoresced light in order to detect the original pattern caused by the diffraction of the radiation by the original sample. The optical fiber is retained directly in front of the phosphor screen by a thin metal holder which moves up and down across the phosphor screen and which features a replaceable pinhole which allows easy adjustment of the resolution of the light projected onto the phosphor film. The device produces near real time images with high spatial resolution and without the distortion that accompanies prior art devices employing photomultiplier tubes. A method is also provided for carrying out radiation area detection using the device of the invention.

  12. Measuring ionizing radiation with a mobile device

    Science.gov (United States)

    Michelsburg, Matthias; Fehrenbach, Thomas; Puente León, Fernando

    2012-02-01

    In cases of nuclear disasters it is desirable to know one's personal exposure to radioactivity and the related health risk. Usually, Geiger-Mueller tubes are used to assess the situation. Equipping everyone with such a device in a short period of time is very expensive. We propose a method to detect ionizing radiation using the integrated camera of a mobile consumer device, e.g., a cell phone. In emergency cases, millions of existing mobile devices could then be used to monitor the exposure of its owners. In combination with internet access and GPS, measured data can be collected by a central server to get an overview of the situation. During a measurement, the CMOS sensor of a mobile device is shielded from surrounding light by an attachment in front of the lens or an internal shutter. The high-energy radiation produces free electrons on the sensor chip resulting in an image signal. By image analysis by means of the mobile device, signal components due to incident ionizing radiation are separated from the sensor noise. With radioactive sources present significant increases in detected pixels can be seen. Furthermore, the cell phone application can make a preliminary estimate on the collected dose of an individual and the associated health risks.

  13. Decoupling degradation in exciton formation and recombination during lifetime testing of organic light-emitting devices

    Science.gov (United States)

    Hershey, Kyle W.; Suddard-Bangsund, John; Qian, Gang; Holmes, Russell J.

    2017-09-01

    The analysis of organic light-emitting device degradation is typically restricted to fitting the overall luminance loss as a function of time or the characterization of fully degraded devices. To develop a more complete understanding of degradation, additional specific data are needed as a function of luminance loss. The overall degradation in luminance during testing can be decoupled into a loss in emitter photoluminescence efficiency and a reduction in the exciton formation efficiency. Here, we demonstrate a method that permits separation of these component efficiencies, yielding the time evolution of two additional specific device parameters that can be used in interpreting and modeling degradation without modification to the device architecture or introduction of any additional post-degradation characterization steps. Here, devices based on the phosphor tris[2-phenylpyridinato-C2,N]iridium(III) (Ir(ppy)3) are characterized as a function of initial luminance and emissive layer thickness. The overall loss in device luminance is found to originate primarily from a reduction in the exciton formation efficiency which is exacerbated in devices with thinner emissive layers. Interestingly, the contribution to overall degradation from a reduction in the efficiency of exciton recombination (i.e., photoluminescence) is unaffected by thickness, suggesting a fixed exciton recombination zone width and degradation at an interface.

  14. [White organic light emitting device with dyestuff DCJTB blended in polymer].

    Science.gov (United States)

    Zhang, Yan-Fei; Xu, Zheng; Zhang, Fu-Jun; Wang, Yong; Zhao, Su-Ling

    2008-04-01

    The Alq3 and DCJTB were blended with poly (N-vinylcarbazole) (PVK) in different weight ratios and spin coated into films. Multilayer devices with the light emitting layer PVK : Alq3 : DCJTB were fabricated, and their structure was ITO/ PVK : Alq3 : DCJTB/ BCP/Alq3/LiF/Al in which BCP and Alq3 were employed as the hole-blocking and electron-transporting layers respectively, PVK is the blue light-emitting as well as hole-transporting layer. The mass proportion of PVK relative to Alq3 was tuned while the quality ratio of PVK to DCJTB remained (100 : 1). Finally, fairly pure and stabile white emission was achieved when PVK : Alq3 : DCJTB was 100 : 5 : 1. The CIE coordinate was (0.33, 0.36) at 14 V, which is very stable at various biases (10-14 V).

  15. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  16. Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shengqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Ma, Zhu; Zhao, Juan [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2013-02-15

    High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4 Prime ,6 Prime -difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2 Prime }]iridium (acetylacetonate) [(t-bt){sub 2}Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m{sup 2} (at 15.2 V), 79.0 cd/A (at 1550 cd/m{sup 2}) and 40.5 lm/W (at 1000 cd/m{sup 2}), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt){sub 2}Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. - Highlights: Black-Right-Pointing-Pointer Highly efficient WOLEDs based on two complementary layers were fabricated. Black-Right-Pointing-Pointer The yellow emissive layer was formed by utilizing undoping system. Black-Right-Pointing-Pointer The blue emissive layer was made by host-guest doping system. Black-Right-Pointing-Pointer The thickness of the yellow emissive layer was varied to make device optimization. Black-Right-Pointing-Pointer The optimized device achieved high power efficiency of 40.5 lm/W.

  17. Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

    Science.gov (United States)

    Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

    2015-03-01

    Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

  18. All-inorganic white light emitting devices based on ZnO nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nannen, Ekaterina

    2012-09-21

    Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

  19. Three-peak standard white organic light-emitting devices for solid-state lighting

    Science.gov (United States)

    Guo, Kunping; Wei, Bin

    2014-12-01

    Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

  20. Lamination of organic solar cells and organic light emitting devices: Models and experiments

    International Nuclear Information System (INIS)

    Oyewole, O. K.; Yu, D.; Du, J.; Asare, J.; Fashina, A.; Anye, V. C.; Zebaze Kana, M. G.; Soboyejo, W. O.

    2015-01-01

    In this paper, a combined experimental, computational, and analytical approach is used to provide new insights into the lamination of organic solar cells and light emitting devices at macro- and micro-scales. First, the effects of applied lamination force (on contact between the laminated layers) are studied. The crack driving forces associated with the interfacial cracks (at the bi-material interfaces) are estimated along with the critical interfacial crack driving forces associated with the separation of thin films, after layer transfer. The conditions for successful lamination are predicted using a combination of experiments and computational models. Guidelines are developed for the lamination of low-cost organic electronic structures

  1. STUDY OF DEGRADATION MECHANISM AND PACKAGING OF ORGANIC LIGHT EMITTING DEVICES

    Institute of Scientific and Technical Information of China (English)

    Gu Xu

    2003-01-01

    Organic Light Emitting Devices (OLED) have attracted much attention recently, for their applications in future Flat Panel Displays and lighting products. However, their fast degradation remained a major obstacle to their commercialization. Here we present a brief summary of our studies on both extrinsic and intrinsic causes for the fast degradation of OLEDs. In particular, we focus on the origin of the dark spots by "rebuilding" cathodes, which confirms that the growth of dark spots occurs primarily due to cathode delamination. In the meantime, we recapture the findings from the search for suitable OLED packaging materials, in particular polymer composites, which provide both heat dissipation and moisture resistance, in addition to electrical insulation.

  2. Operation control device under radiation exposure

    International Nuclear Information System (INIS)

    Kimura, Kiichi; Murakami, Toichi.

    1994-01-01

    The device of the present invention performs smooth progress of operation by remote control for a plurality of operations in periodical inspections in controlled areas of a nuclear power plant, thereby reducing the operator's exposure dose. Namely, the device monitors the progressing state of the operation by displaying the progress of operation on a CRT of a centralized control device present in a low dose area remote from an operation field through an ITV camera disposed in the vicinity of the operation field. Further, operation sequence and operation instruction procedures previously inputted in the device are indicated to the operation field through an operation instruction outputting device (field CRT) in accordance with the progress of the operation steps. On the other hand, the operation progress can be aided by inputting information from the operation field such as start or completion of the operation steps. Further, the device of the present invention can monitor the change of operation circumstances and exposure dose of operators based on the information from a radiation dose measuring device disposed in the operation circumstance and to individual operators. (I.S.)

  3. Study of radiation effects on semiconductor devices

    International Nuclear Information System (INIS)

    Kuboyama, Satoshi; Shindou, Hiroyuki; Ikeda, Naomi; Iwata, Yoshiyuki; Murakami, Takeshi

    2004-01-01

    Fine structure of the recent semiconductor devices has made them more sensitive to the space radiation environment with trapped high-energy protons and heavy ions. A new failure mode caused by bulk damage had been reported on such devices with small structure, and its effect on commercial synchronous dynamic random access memory (SDRAMs) was analyzed from the irradiation test results performed at Heavy ion Medical Accelerator in Chiba (HIMAC). Single event upset (SEU) data of static random access memory (SRAMs) were also collected to establish the method of estimating the proton-induced SEU rate from the results of heavy ion irradiation tests. (authors)

  4. an assessment of ultraviolet radiation components of light emitted ...

    African Journals Online (AJOL)

    Dr

    therefore high for exposure limits of 8 hours for UV-B and UV-C and the 16 minutes for UV-A. The investigation ... has become particularly interesting as the ozone layer ... THEORY. Ultraviolet (UV) light is an electromagnetic radiation with a ...

  5. Radiation effects in LDD MOS devices

    International Nuclear Information System (INIS)

    Woodruff, R.L.; Adams, J.R.

    1987-01-01

    The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10 6 rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10 6 rads(Si), and shows promise for achieving 1.0 x 10 7 rad(Si) total-dose capability

  6. Measurements of nonionizing radiation emitted from microwave oven

    International Nuclear Information System (INIS)

    Elnour, Yassir Elnour Osman

    2014-05-01

    There is an increase in the usage of microwave oven which is used electromagnetic radiation in the microwave range, which believed to be harmful to human health. The measurements were taken at distance of range(0-100) cm from the microwave oven. The study concluded that the risk possibility of the radiation increases at high mode. We measured the power density, magnetic field and signal strength of microwave oven using the SPECTRAN high frequency (HF-6080) detector. The experimental results of power density were found to be (3.78-208000) nW/m 2 and magnetic field is (0.001-0.744) mA/m. These values are less than the exposure limits recommended. (author)

  7. Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

    International Nuclear Information System (INIS)

    Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

    2007-01-01

    We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

  8. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Science.gov (United States)

    Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

    2018-02-01

    A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  9. Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

    Directory of Open Access Journals (Sweden)

    Zahra Bisadi

    2018-02-01

    Full Text Available A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

  10. White organic light emitting devices with hybrid emissive layers combining phosphorescence and fluorescence

    Energy Technology Data Exchange (ETDEWEB)

    Lei Gangtie; Chen Xiaolan; Wang Lei; Zhu Meixiang; Zhu Weiguo [Key Lab of Environmental-friendly Chemistry and Application of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105 (China); Wang Liduo; Qiu Yong [Key Lab of Organic-Optoelectronics and Molecular Sciences of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)], E-mail: lgt@xtu.edu.cn

    2008-05-21

    We fabricated a white organic light-emitting diode (WOLED) by hybrid emissive layers which combined phosphorescence with fluorescence. In this device, the thin layer of 4-(dicyanomethylene)-2-(t-butyl)-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran played the role of undoped red emissive layer which was inserted between two blue phosphorescence emissive layers. The blue phosphorescent dye was bis[(4, 6-difluorophenyl)-pyridinato-N, C{sup 2}] (picolinato) Ir(III), which was doped in the host material, N, N'-dicarbazolyl-1, 4-dimethene-benzene. The WOLED showed stable Commission Internationale de L'Eclairage coordinates and a high efficency of 9.6 cd A{sup -1} when the current density was 1.8 A m{sup -2}. The maximum luminance of the device achieved was 17 400 cd m{sup -2} when the current density was 3000 A m{sup -2}.

  11. Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

    Science.gov (United States)

    Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

    2015-04-22

    Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

  12. Improvement in Device Performance and Reliability of Organic Light-Emitting Diodes through Deposition Rate Control

    Directory of Open Access Journals (Sweden)

    Shun-Wei Liu

    2014-01-01

    Full Text Available We demonstrated a fabrication technique to reduce the driving voltage, increase the current efficiency, and extend the operating lifetime of an organic light-emitting diode (OLED by simply controlling the deposition rate of bis(10-hydroxybenzo[h]qinolinato beryllium (Bebq2 used as the emitting layer and the electron-transport layer. In our optimized device, 55 nm of Bebq2 was first deposited at a faster deposition rate of 1.3 nm/s, followed by the deposition of a thin Bebq2 (5 nm layer at a slower rate of 0.03 nm/s. The Bebq2 layer with the faster deposition rate exhibited higher photoluminescence efficiency and was suitable for use in light emission. The thin Bebq2 layer with the slower deposition rate was used to modify the interface between the Bebq2 and cathode and hence improve the injection efficiency and lower the driving voltage. The operating lifetime of such a two-step deposition OLED was 1.92 and 4.6 times longer than that of devices with a single deposition rate, that is, 1.3 and 0.03 nm/s cases, respectively.

  13. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

    Science.gov (United States)

    Zhong, Z Y; Jiang, Y D

    2006-10-15

    In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

  14. Non-radiative recombination losses in polymer light-emitting diodes

    NARCIS (Netherlands)

    Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

    We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

  15. Radiation effects on custom MOS devices

    International Nuclear Information System (INIS)

    Harris, R.

    1999-05-01

    This Thesis consists of four chapters: The first is primarily for background information on the effects of radiation on MOS devices and the theory of wafer bonding; the second gives a full discussion of all practical work carried out for manufacture of Field Effect test Capacitors, the third discusses manufacture of vacuum insulator Field Effect Transistors (FET's) and the fourth discusses the testing of these devices. Using a thermally bonded field effect capacitor structure, a vacuum dielectric was studied for use in high radiation environments with a view to manufacturing a CMOS compatible, micro machined transistor. Results are given in the form of high frequency C-V curves before and after a 120 kGy(Si), 12 MRad(Si), dose from a Co 60 source showing a 1 Volt shift. The work is then extended to the design and manufacture of a micro machined, under-etch technique, Field Effect Transistor for use in high radiation areas. Results are shown for Threshold, Subthreshold and Transfer characteristics before and after irradiation up to a total dose of 100kGy or 10MRad. The conclusion from this work is that it should be possible to commercially manufacture practical vacuum dielectric field effect transistors which are radiation hard to at least 120 kGy(Si). (author)

  16. Measurement of Underwater Operational Noise Emitted by Wave and Tidal Stream Energy Devices.

    Science.gov (United States)

    Lepper, Paul A; Robinson, Stephen P

    2016-01-01

    The increasing international growth in the development of marine and freshwater wave and tidal energy harvesting systems has been followed by a growing requirement to understand any associated underwater impact. Radiated noise generated during operation is dependent on the device's physical properties, the sound-propagation environment, and the device's operational state. Physical properties may include size, distribution in the water column, and mechanics/hydrodynamics. The sound-propagation environment may be influenced by water depth, bathymetry, sediment type, and water column acoustic properties, and operational state may be influenced by tidal cycle and wave height among others This paper discusses some of the challenges for measurement of noise characteristics from these devices as well as a case study of the measurement of radiated noise from a full-scale wave energy converter.

  17. Effects of radiation on MOS structures and silicon devices

    International Nuclear Information System (INIS)

    Braeunig, D.; Fahrner, W.

    1983-02-01

    A comprehensive view of radiation effects on MOS structures and silicon devices is given. In the introduction, the interaction of radiation with semiconductor material is presented. In the next section, the electrical degradation of semiconductor devices due to this interaction is discussed. The commonly used hardening techniques are shown. The last section deals with testing of radiation hardness of devices. (orig.) [de

  18. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  19. Geometric radiation exchange factors for axial radiative transfer in an LWR core filled with absorbing-emitting gases

    International Nuclear Information System (INIS)

    Chan, S.H.; Cho, D.H.

    1984-01-01

    A reactor core filled with an emitting-absorbing mixture (like steam, hydrogen gas and fission gases) is considered. Analysis is provided to evaluate axial radiative heat exchange of a rod bundle with a nonuniform axial temperature distribution. The necessary radiation exchange shape factors (geometric mean absorptance, emittance and transmittance) between segments of the complex rod bundle arrangement are presented. They are applicable to arbitrary sizes of segments, well suited for numerical computations

  20. Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

    International Nuclear Information System (INIS)

    Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

    2004-01-01

    We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

  1. Efficient white organic light-emitting devices based on blue, orange, red phosphorescent dyes

    International Nuclear Information System (INIS)

    Chen Ping; Duan Yu; Xie Wenfa; Zhao Yi; Hou Jingying; Liu Shiyong; Zhang Liying; Li Bin

    2009-01-01

    We demonstrate efficient white organic light-emitting devices (WOLEDs) based on an orange phosphorescent iridium complex bis(2-(2-fluorphenyl)-1,3-benzothiozolato-N, C 2' )iridium(acetylacetonate) in combination with blue phosphorescent dye bis[(4, 6-difluorophenyl)-pyridinato-N,C 2 )](picolinato) Ir(III) and red phosphorescent dye bis[1-(phenyl)isoquinoline] iridium (III) acetylanetonate. By introducing a thin layer of 4, 7-diphenyl-1,10-phenanthroline between blue and red emission layers, the diffusion of excitons is confined and white light can be obtained. WOLEDs with the interlayer all have a higher colour rendering index (>82) than the device without it (76). One device has the maximum current efficiency of 17.6 cd A -1 and a maximum luminance of 39 050 cd m -2 . The power efficiency is 8.7 lm W -1 at 100 cd m -2 . Furthermore, the device has good colour stability and the CIE coordinates just change from (0.394, 0.425) to (0.390, 0.426) with the luminance increasing from 630 to 4200 cd m -2 .

  2. White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

    International Nuclear Information System (INIS)

    Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

    2007-01-01

    In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

  3. OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Blochwitz-Nimoth, Jan; Bhandari, Abhinav; Boesch, Damien; Fincher, Curtis R.; Gaspar, Daniel J.; Gotthold, David W.; Greiner, Mark T.; Kido, Junji; Kondakov, Denis; Korotkov, Roman; Krylova, Valentina A.; Loeser, Falk; Lu, Min-Hao; Lu, Zheng-Hong; Lussem, Bjorn; Moro, Lorenza; Padmaperuma, Asanga B.; Polikarpov, Evgueni; Rostovtsev, Vsevolod V.; Sasabe, Hisahiro; Silverman, Gary; Thompson, Mark E.; Tietze, Max; Tyan, Yuan-Sheng; Weaver, Michael; Xin , Xu; Zeng, Xianghui

    2015-05-26

    What is an organic light emitting diode (OLED)? Why should we care? What are they made of? How are they made? What are the challenges in seeing these devices enter the marketplace in various applications? These are the questions we hope to answer in this book, at a level suitable for knowledgeable non-experts, graduate students and scientists and engineers working in the field who want to understand the broader context of their work. At the most basic level, an OLED is a promising new technology composed of some organic material sandwiched between two electrodes. When current is passed through the device, light is emitted. The stack of layers can be very thin and has many variations, including flexible and/or transparent. The organic material can be polymeric or composed small molecules, and may include inorganic components. The electrodes may consist of metals, metal oxides, carbon nanomaterials, or other species, though of course for light to be emitted, one electrode must be transparent. OLEDs may be fabricated on glass, metal foils, or polymer sheets (though polymeric substrates must be modified to protect the organic material from moisture or oxygen). In any event, the organic material must be protected from moisture during storage and operation. A control circuit, the exact nature of which depends on the application, drives the OLED. Nevertheless, the control circuit should have very stable current control to generate uniform light emission. OLEDs can be designed to emit a single color of light, white light, or even tunable colors. The devices can be switched on and off very rapidly, which makes them suitable for displays or for general lighting. Given the amazing complexity of the technical and design challenges for practical OLED applications, it is not surprising that applications are still somewhat limited. Although organic electroluminescence is more than 50 years old, the modern OLED field is really only about half that age – with the first high

  4. Exposure to Radiofrequency Radiation Emitted from Common Mobile Phone Jammers Alters the Pattern of Muscle Contractions: an Animal Model Study

    Directory of Open Access Journals (Sweden)

    Rafati A.

    2015-09-01

    Full Text Available Introduction: The rapid growth of wireless communication technologies has caused public concerns regarding the biological effects of electromagnetic radiations on human health. Some early reports indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians such as the alterations of the pattern of muscle extractions. This study is aimed at investigating the effects of exposure to radiofrequency (RF radiation emitted from mobile phone jammers on the pulse height of contractions, the time interval between two subsequent contractions and the latency period of frog’s isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz. Materials and Methods: Frogs were kept in plastic containers in a room. Animals in the jammer group were exposed to radiofrequency (RF radiation emitted from a common Jammer at a distance of 1m from the jammer’s antenna for 2 hours while the control frogs were only sham exposed. Then animals were sacrificed and isolated gastrocnemius muscles were exposed to on/off jammer radiation for 3 subsequent 10 minute intervals. Isolated gastrocnemius muscles were attached to the force transducer with a string. Using a PowerLab device (26-T, the pattern of muscular contractions was monitored after applying single square pulses of 1V (1 Hz as stimuli. Results: The findings of this study showed that the pulse height of muscle contractions could not be affected by the exposure to electromagnetic fields. However, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. Conclusion: These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions.

  5. Exposure to Radiofrequency Radiation Emitted from Common Mobile Phone Jammers Alters the Pattern of Muscle Contractions: an Animal Model Study.

    Science.gov (United States)

    Rafati, A; Rahimi, S; Talebi, A; Soleimani, A; Haghani, M; Mortazavi, S M J

    2015-09-01

    The rapid growth of wireless communication technologies has caused public concerns regarding the biological effects of electromagnetic radiations on human health. Some early reports indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians such as the alterations of the pattern of muscle extractions. This study is aimed at investigating the effects of exposure to radiofrequency (RF) radiation emitted from mobile phone jammers on the pulse height of contractions, the time interval between two subsequent contractions and the latency period of frog's isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz). Frogs were kept in plastic containers in a room. Animals in the jammer group were exposed to radiofrequency (RF) radiation emitted from a common Jammer at a distance of 1m from the jammer's antenna for 2 hours while the control frogs were only sham exposed. Then animals were sacrificed and isolated gastrocnemius muscles were exposed to on/off jammer radiation for 3 subsequent 10 minute intervals. Isolated gastrocnemius muscles were attached to the force transducer with a string. Using a PowerLab device (26-T), the pattern of muscular contractions was monitored after applying single square pulses of 1V (1 Hz) as stimuli. The findings of this study showed that the pulse height of muscle contractions could not be affected by the exposure to electromagnetic fields. However, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions.

  6. Red organic light emitting devices with reduced efficiency roll-off behavior by using hybrid fluorescent/phosphorescent emission structure

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Tianhang; Choy, Wallace C.H., E-mail: chchoy@eee.hku.h

    2010-11-01

    Organic light emitting device (OLED) with a fluorescence-interlayer-phosphorescence emissive structure (FIP EML) is proposed to solve efficiency roll-off issue effectively. By doping fluorescent emitter of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) and phosphorescent emitter of tris(1-phenylisoquinolinolato-C2,N)iridium(III) (Ir(piq){sub 3}) into the different regions of emission zone to form FIP EML in red OLED, an improvement of more than 20% in luminance efficiency roll-off compared with that of typical phosphorescent OLED with single EML in 10-500 mA/cm{sup 2} range has been obtained. Detailed mechanisms have been studied. Such improvement should be attributed to the distinct roles of the two emitters, where DCJTB mainly used to influence the carrier transport leading to an improved balance of charge carriers while Ir(piq){sub 3} functions as the radiative decay sites for most generated excitons. Meanwhile, with the help of the formation of FIP EML, the redistribution of excitons in recombination zone, the suppression of non-radiative exciton quenching processes and the elimination of energy transfer loss also contribute to the enhancement of efficiency roll-off. The method proposed here may provide a route to develop efficient OLED for high luminance applications.

  7. Device Engineering and Degradation Mechanism Study of All-Phosphorescent White Organic Light-Emitting Diodes

    Science.gov (United States)

    Xu, Lisong

    As a possible next-generation solid-state lighting source, white organic light-emitting diodes (WOLEDs) have the advantages in high power efficiency, large area and flat panel form factor applications. Phosphorescent emitters and multiple emitting layer structures are typically used in high efficiency WOLEDs. However due to the complexity of the device structure comprising a stack of multiple layers of organic thin films, ten or more organic materials are usually required, and each of the layers in the stack has to be optimized to produce the desired electrical and optical functions such that collectively a WOLED of the highest possible efficiency can be achieved. Moreover, device degradation mechanisms are still unclear for most OLED systems, especially blue phosphorescent OLEDs. Such challenges require a deep understanding of the device operating principles and materials/device degradation mechanisms. This thesis will focus on achieving high-efficiency and color-stable all-phosphorescent WOLEDs through optimization of the device structures and material compositions. The operating principles and the degradation mechanisms specific to all-phosphorescent WOLED will be studied. First, we investigated a WOLED where a blue emitter was based on a doped mix-host system with the archetypal bis(4,6-difluorophenyl-pyridinato-N,C2) picolinate iridium(III), FIrpic, as the blue dopant. In forming the WOLED, the red and green components were incorporated in a single layer adjacent to the blue layer. The WOLED efficiency and color were optimized through variations of the mixed-host compositions to control the electron-hole recombination zone and the dopant concentrations of the green-red layers to achieve a balanced white emission. Second, a WOLED structure with two separate blue layers and an ultra-thin red and green co-doped layer was studied. Through a systematic investigation of the placement of the co-doped red and green layer between the blue layers and the material

  8. Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Wang, Yaling; Miao, Yanqin; Yang, Yongzhen, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); He, Yuheng; Liu, Xuguang, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2016-08-22

    Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

  9. Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

    Directory of Open Access Journals (Sweden)

    Tien-Lung Chiu

    2012-06-01

    Full Text Available In this paper, we investigate the carrier injection and transport characteristics in iridium(IIIbis[4,6-(di-fluorophenyl-pyridinato-N,C2']picolinate (FIrpic doped phosphorescent organic light-emitting devices (OLEDs with oxadiazole (OXD as the bipolar host material of the emitting layer (EML. When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD.

  10. Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

    International Nuclear Information System (INIS)

    Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong

    2009-01-01

    White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W -1 at 5.5 V and a maximum luminance of 16 690 cd m -2 at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

  11. Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn

    2009-01-07

    White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W{sup -1} at 5.5 V and a maximum luminance of 16 690 cd m{sup -2} at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

  12. Solution-processed white organic light-emitting devices based on small-molecule materials

    International Nuclear Information System (INIS)

    Wang Dongdong; Wu Zhaoxin; Zhang Xinwen; Wang Dawei; Hou Xun

    2010-01-01

    We investigated solution-processed films of 4,4'-bis(2,2-diphenylvinyl)-1,1'-bibenyl (DPVBi) and its blends with N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m 2 , a maximum luminance of 22500 cd/m 2 , and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.

  13. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Science.gov (United States)

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  14. Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

    Science.gov (United States)

    Gan, Ruting; Guo, Zhenning; Lin, Jieben

    2015-09-01

    To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

  15. Highly flexible peeled-off silver nanowire transparent anode using in organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Ya-Hui; Duan, Yu, E-mail: duanyu@jlu.edu.cn; Wang, Xiao; Yang, Dan; Yang, Yong-Qiang; Chen, Ping; Sun, Feng-Bo; Xue, Kai-Wen; Zhao, Yi

    2015-10-01

    Graphical abstract: - Highlights: • An ultra-smooth AgNW film on a flexible photopolymer substrate has been fabricated. • The AgNW film has a low sheet resistance with high transparency and flexibility. • OLEDs based on AgNW:NOA63 substrate can be bent at a radius of curvature of 2 mm. - Abstract: Materials to replace indium tin oxide (ITO) for high transmittance and electrical conductivity are urgently needed. In this paper, we adopted a silver nanowire (AgNW)-photopolymer (NOA63) film as a new platform for flexible optoelectronic devices. This design combined a transparent electrode and a flexible substrate. We utilized this application to obtain flexible organic light-emitting devices (FOLEDs). A peel-off process combined with a spin-coating process created an ultra-smooth silver nanowire anode on a photopolymer substrate. The performance of the device was achieved via the perfect morphology of the AgNW anode, the optimal 5 mg/ml concentration of AgNW solution, and the 45.7 Ω/□ sheet resistance of the AgNW film. The maximum current efficiency of the FOLED is 13 cd/A with stable mechanical flexibility even when bent to a radius of curvature of 2 mm. The outstanding performance of the FOLED with peeled off AgNW anode shows that this approach is a promising alternative to ITO for FOLEDs.

  16. Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2015-12-01

    Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

  17. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    International Nuclear Information System (INIS)

    Zhang, Yingjie; Aziz, Hany

    2014-01-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10 5  cd/m 2 is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  18. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    Energy Technology Data Exchange (ETDEWEB)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D., E-mail: ngtho@uga.edu [Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

    2013-12-09

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

  19. Study of thermal degradation of organic light emitting device structures by X-ray scattering

    International Nuclear Information System (INIS)

    Lee, Young-Joo; Lee, Heeju; Byun, Youngsuk; Song, Sanghoon; Kim, Je-Eun; Eom, Daeyong; Cha, Wonsuk; Park, Seong-Sik; Kim, Jinwoo; Kim, Hyunjung

    2007-01-01

    We report the process of thermal degradation of organic light emitting devices (OLEDs) having multilayered structure of [LiF/tris-(8-hydroxyquinoline) aluminum(Alq 3 )/N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine (NPB)/copper phthalocyanine (CuPc)/indium tin oxide (ITO)/SiO 2 on a glass] by synchrotron X-ray scattering. The results show that the thermally induced degradation process of OLED multilayers has undergone several evolutions due to thermal expansion of NPB, intermixing between NPB, Alq 3 , and LiF layers, dewetting of NPB on CuPc, and crystallization of NPB and Alq 3 depending on the annealing temperature. The crystallization of NPB appears at 180 deg. C, much higher temperature than the glass transition temperature (T g = 96 deg. C) of NPB. The results are also compared with the findings from the atomic force microscope (AFM) images

  20. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10{sup 5} cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  1. Phosphorescent Organic Light-Emitting Devices: Working Principle and Iridium Based Emitter Materials

    Directory of Open Access Journals (Sweden)

    Emil J. W. List

    2008-08-01

    Full Text Available Even though organic light-emitting device (OLED technology has evolved to a point where it is now an important competitor to liquid crystal displays (LCDs, further scientific efforts devoted to the design, engineering and fabrication of OLEDs are required for complete commercialization of this technology. Along these lines, the present work reviews the essentials of OLED technology putting special focus on the general working principle of single and multilayer OLEDs, fluorescent and phosphorescent emitter materials as well as transfer processes in host materials doped with phosphorescent dyes. Moreover, as a prototypical example of phosphorescent emitter materials, a brief discussion of homo- and heteroleptic iridium(III complexes is enclosed concentrating on their synthesis, photophysical properties and approaches for realizing iridium based phosphorescent polymers.

  2. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    International Nuclear Information System (INIS)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D.

    2013-01-01

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model

  3. Advances in phosphors based on organic materials for light emitting devices

    International Nuclear Information System (INIS)

    Sharma, Kashma; Kumar, Vijay; Kumar, Vinod; Swart, Hendrik C.

    2016-01-01

    A brief overview is presented in the light emitting diodes (LEDs) based on purely organic materials. Organic LEDs are of great interest to the research community because of their outstanding properties and flexibility. Comparison between devices made using different organic materials and their derivatives with respect to synthetic protocols, characterizations, quantum efficiencies, sensitivity, specificity and their applications in various fields have been discussed. This review also discusses the essential requirement and scientific issues that arise in synthesizing cost-effective and environmental friendly organic LEDs diodes based on purely organic materials. This mini review aims to capture and convey some of the key current developments in phosphors formed by purely organic materials and highlights some possible future applications. Hence, this study comes up with a widespread discussion on the various contents in a single platform. Also, it offers avenues for new researchers for futuristic development in the area.

  4. Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

    Science.gov (United States)

    Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

    2014-10-01

    Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

  5. Automatic device for measuring β-emitting sources: P.A.P.A. β-meters

    International Nuclear Information System (INIS)

    Colomer, J.; Valentin, M.

    1969-01-01

    The apparatus described is designed for measuring β-emitting elements by the absorption method; it is suitable for carrying out a large number of routine analyses. A mechanical device pushes an aluminium absorption set automatically between the source and the detector; the movement is programmed for cutting on and off by a transistorized electronic unit, with printing out and punching of the results on tape; then this can be mathematically processed by a computer (tracing of absorption spectra, extrapolation and calculation of the activity). The detector is either a β-probe or a proportional counter with a specially designed loop. For routine measurements, the accuracy obtained, with all corrections made, is from 5 to 8 per cent; the reproducibility is about 2 per cent. (authors) [fr

  6. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhan, Y.Q. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: yqzhan@fudan.edu.cn; Zhou, J. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhou, Y.C. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Wu, Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Yang, H. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Li, F.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Ding, X.M. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou, X.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: xyhou@fudan.edu.cn

    2007-05-07

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light.

  7. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    International Nuclear Information System (INIS)

    Zhan, Y.Q.; Zhou, J.; Zhou, Y.C.; Wu, Y.; Yang, H.; Li, F.Y.; Ding, X.M.; Hou, X.Y.

    2007-01-01

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light

  8. Neutron emission from 9Be nucleus under the action of β+ and γ radiation emitted in radioactive decay

    International Nuclear Information System (INIS)

    Vo Dak Bang; Gangrskij, Yu.P.; Miller, M.B.; Mikhajlov, L.V.; Fam Zui Khien; Kharisov, I.F.

    1980-01-01

    The neutron yield from the 9 Be nucleus under the action of beta and gamma-radiation emitted at the radiative decay of 11 C, 62 Cu, 66 Ga, 74 Br isotopes is measured. These isotopes differ essentially by the emitted radiation spectra. The contribution of various processes ((γ, n)-reactions, inelastic scattering and positron nonradiative annihilation) to the neutron yield observed is determined [ru

  9. Correlation of electromagnetic radiation emitted from coal or rock to supporting resistance

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Hui-lin; Wang, En-yuan; Song, Xiao-yan; Zhang, Hong-jie; Li, Zhong-hui [China University of Mining & Technology, Xuzhou (China). School of Safety Engineering

    2009-05-15

    More accurate forecasting of rock burst might be possible from observations of electromagnetic radiation emitted in the mine. We analyzed experimental observations and field data from the Muchengjian coal mine to study the relationship between electromagnetic radiation signal intensity and stress during the fracturing of coal, or rock, and samples under load. The results show that the signal intensity is positively correlated with stress. In addition, we investigated the change in the electromagnetic radiation intensity, the supporting resistance in a real coal mine environment, and the coal or rock stress in the mining area. The data analysis indicates that: (1) electromagnetic radiation intensity can accurately reflect the distribution of stress in the mining area; and, (2) there is a correlation between electromagnetic radiation intensity and supporting resistance. The research has some practical guiding significance for rock burst forecasting and for the prevention of accidents in coal mines. 9 refs., 6 figs.

  10. Detection device of dangerous radiation for the living beings

    International Nuclear Information System (INIS)

    Lacoste, F.

    1991-01-01

    This invention is about a portable device able to measure dose rates or doses of gamma, ultraviolet and X radiation or charged particles. This device is composed of a radiation detector, a calculator of the accumulate dose and a memory to store the data. This device has a credit card format

  11. The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

    2007-01-01

    Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

  12. Bacterial cellulose membrane as flexible substrate for organic light emitting devices

    International Nuclear Information System (INIS)

    Legnani, C.; Vilani, C.; Calil, V.L.; Barud, H.S.; Quirino, W.G.; Achete, C.A.; Ribeiro, S.J.L.; Cremona, M.

    2008-01-01

    Bacterial cellulose (BC) membranes produced by gram-negative, acetic acid bacteria (Gluconacetobacter xylinus), were used as flexible substrates for the fabrication of Organic Light Emitting Diodes (OLED). In order to achieve the necessary conductive properties indium tin oxide (ITO) thin films were deposited onto the membrane at room temperature using radio frequency (r.f.) magnetron sputtering with an r.f. power of 30 W, at pressure of 8 mPa in Ar atmosphere without any subsequent thermal treatment. Visible light transmittance of about 40% was observed. Resistivity, mobility and carrier concentration of deposited ITO films were 4.90 x 10 -4 Ohm cm, 8.08 cm 2 /V-s and - 1.5 x 10 21 cm -3 , respectively, comparable with commercial ITO substrates. In order to demonstrate the feasibility of devices based on BC membranes three OLEDs with different substrates were produced: a reference one with commercial ITO on glass, a second one with a SiO 2 thin film interlayer between the BC membrane and the ITO layer and a third one just with ITO deposited directly on the BC membrane. The observed OLED luminance ratio was: 1; 0.5; 0.25 respectively, with 2400 cd/m 2 as the value for the reference OLED. These preliminary results show clearly that the functionalized biopolymer, biodegradable, biocompatible bacterial cellulose membranes can be successfully used as substrate in flexible organic optoelectronic devices

  13. Reinventing a p-type doping process for stable ZnO light emitting devices

    Science.gov (United States)

    Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2018-06-01

    A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

  14. [The role of BCP in electroluminescence of multilayer organic light-emitting devices].

    Science.gov (United States)

    Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

    2009-03-01

    As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

  15. Low-voltage and high-efficiency white organic light emitting devices with carrier balance

    International Nuclear Information System (INIS)

    Wei Fuxiang; Huang, Y.; Fang, L.

    2010-01-01

    White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

  16. Efficient non-doped phosphorescent orange, blue and white organic light-emitting devices

    Science.gov (United States)

    Yin, Yongming; Yu, Jing; Cao, Hongtao; Zhang, Letian; Sun, Haizhu; Xie, Wenfa

    2014-10-01

    Efficient phosphorescent orange, blue and white organic light-emitting devices (OLEDs) with non-doped emissive layers were successfully fabricated. Conventional blue phosphorescent emitters bis [4,6-di-fluorophenyl]-pyridinato-N,C2'] picolinate (Firpic) and Bis(2,4-difluorophenylpyridinato) (Fir6) were adopted to fabricate non-doped blue OLEDs, which exhibited maximum current efficiency of 7.6 and 4.6 cd/A for Firpic and Fir6 based devices, respectively. Non-doped orange OLED was fabricated utilizing the newly reported phosphorescent material iridium (III) (pbi)2Ir(biq), of which manifested maximum current and power efficiency of 8.2 cd/A and 7.8 lm/W. The non-doped white OLEDs were achieved by simply combining Firpic or Fir6 with a 2-nm (pbi)2Ir(biq). The maximum current and power efficiency of the Firpic and (pbi)2Ir(biq) based white OLED were 14.8 cd/A and 17.9 lm/W.

  17. Red polymer light-emitting devices based on an oxadiazole-functionalized europium(III) complex

    International Nuclear Information System (INIS)

    Liu, Yu; Wang, Yafei; Li, Chun; Huang, Ying; Dang, Dongfeng; Zhu, Meixiang; Zhu, Weiguo; Cao, Yong

    2014-01-01

    A novel tris(dibenzoylmethanato)[5-(2-(4-tert-butylbenzenyl)-5-benzenyl-1,3, 4-oxadiazole-4′)-1,10-phenanthroline]europium(III) [Eu(DBM) 3 (BuOXD-Phen)] containing an electron-transporting oxadiazole-functionalized phenanthroline ligand was synthesized and characterized. Its UV–vis absorption and photoluminescence (PL), as well as the electroluminescence (EL) in polymer light-emitting devices (PLEDs) were investigated. The double-layer PLEDs with a configuration of ITO/PEDOT:PSS (50 nm)/PVK (40 nm)/PFO:PBD (30%):Eu(DBM) 3 (BuOXD-Phen) (1–8 wt %) (80 nm)/Ba (4 nm)/Al (150 nm) were fabricated. Saturated red Eu 3+ ion emission, based on the 5 D 0 → 7 F 2 transition, is centered at a wavelength of 614 nm with a full width at half maximum (FWHM) of 10 nm. The highest external quantum efficiency (QE ext ) of 1.26% at current density of 1.65 mA cm −2 , with a maximum brightness of 568 cd m −2 at 137.8 mA cm −2 was achieved from the device at 1 wt % dopant concentration. - Highlights: • An oxadiazole-functionalized europium(III) complex of Eu(DBM) 3 (BuOXD-Phen) was presented. • The optophysical properties of Eu(DBM) 3 (BuOXD-Phen) were investigated. • Saturated red emission was observed in the PLEDs. • An external quantum efficiency of 1.26% was obtained in these devices

  18. Luminescence of Rubrene and DCJTB molecules in organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Chang-Bum, E-mail: cbmoon@hoseo.edu [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7 (Canada); Song, Wook; Meng, Mei; Kim, Nam Ho; Yoon, Ju-An [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Kim, Woo Young, E-mail: wykim@hoseo.edu [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Wood, Richard; Mascher, Peter [Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7 (Canada)

    2014-02-15

    We investigated the optical properties of light emission based on the resonance energy transfer mechanism between two molecules in the host–dopant systems. For this purpose, we fabricated the organic light-emitting devices with the different doped emissive layers. The host matrices were made of 4,4′,4″-tris(carbasol-l-nyl)triphenylamine (TCTA) and 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) molecules and the doped molecules were 5,6,11,12-tetraphenylnaphtacene (Rubrene) and 4-(Dicyanomethylene)-2-tert-butyl-6- (1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB). The concentrations of the doped molecules were 0.1%, 0.3%, 0.5%, and 0.8%. Through spectroscopic analysis using multi-peak fits with a Gaussian function to the emission spectra, we obtained the relative light intensity of the two dopants according to the doping concentrations and examined the relations between the molecular excited energy states and the nature of energy transfer in the host and dopant systems. We show that the luminous efficiency of the devices has a strong correlation between the energy transfer owing to the individual molecular intrinsic properties and the electrical characteristics associated with the bulky properties in the devices. -- Highlights: • Fabrication and characterization of the OLEDs with a host–dopant system in the emissive layer. • Investigation of the optical properties of light emission based on the resonance energy transfer mechanism between the dopant molecules. • EL and PL spectroscopic study for the structure of the molecular energy levels in the dopant molecules.

  19. Medical Devices; General Hospital and Personal Use Devices; Classification of the Ultraviolet Radiation Chamber Disinfection Device. Final order.

    Science.gov (United States)

    2015-11-20

    The Food and Drug Administration (FDA or the Agency) is classifying the ultraviolet (UV) radiation chamber disinfection device into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the UV radiation chamber disinfection device classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device.

  20. Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

    Science.gov (United States)

    Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

    2014-09-10

    Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

  1. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  2. Nearly 100% triplet harvesting in conventional fluorescent dopant-based organic light-emitting devices through energy transfer from exciplex.

    Science.gov (United States)

    Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Chen, Miao; Liu, Wei; Zhang, Xiao-Hong; Lee, Chun-Sing

    2015-03-25

    Nearly 100% triplet harvesting in conventional fluorophor-based organic light-emitting devices is realized through energy transfer from exciplex. The best C545T-doped device using the exciplex host exhibits a maximum current efficiency of 44.0 cd A(-1) , a maximum power efficiency of 46.1 lm W(-1) , and a maximum external quantum efficiency of 14.5%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. International Standards for Radiation Sterilization of Medical Devices

    International Nuclear Information System (INIS)

    Miller, A.

    2007-01-01

    For a terminally sterilized medical device to be designated '' STERILE '', probability of finding the viable micro-organisms in the device shall be equal to or less than 1 x 10 -6 (EN 556-1:2001: Sterilization of medical devices - Requirements for medical devices to be designated '' STERILE '' - Part 1: Requirements for terminally sterilized medical devices). Author presents the main legal aspects of the international standards for radiation sterilization of medical devices

  4. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    NARCIS (Netherlands)

    Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P.A.

    2016-01-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance

  5. Enhanced light emission efficiency and current stability by morphology control and thermal annealing of organic light emitting diode devices

    Energy Technology Data Exchange (ETDEWEB)

    Caria, S [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Como, E Da [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Murgia, M [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Zamboni, R [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Melpignano, P [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy); Biondo, V [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy)

    2006-08-23

    The electro-optical behaviour of organic light emitting diode devices (OLEDs) is greatly influenced by the morphology of the films. A major parameter is due to the important role that the morphology of the active organic thin films plays in the phenomena that lead to light emission. For vacuum-grown OLEDs, the morphology of the specific thin films can be varied by modification of the deposition conditions. We have assessed the method (ultrahigh-vacuum organic molecular beam deposition) and conditions (variation of the deposition rate) for electro-emission (EL) optimization in a standard {alpha}-NPB (N,N'-bis-(1-naphthyl)-N,N' diphenyl-1,1' biphenyl-4-4' diamine)/Alq3 (tris-(8-hydroxyquinoline) aluminium) vacuum-grown OLED device. The best EL performances have been obtained for OLEDs made in ultrahigh vacuum with the Alq3 layer deposited with a differential deposition rate ranging from 1.0 to 0.3Angsts{sup -1}. The results are consistent with a model of different Alq3 morphologies, allowing efficient charge injection at the metal/organic interface, and of the minimization of grain boundaries at the electron-hole recombination interface, allowing efficient radiative excitonic decay. At the same time, with the objective of controlling and stabilizing the morphology changes and stabilizing the charge transport over a long OLED operating time, we have studied the effect of thermal annealing processing in the standard current behaviour of OLEDs. The large current fluctuations typically observed for standard vacuum-grown OLEDs have been smeared out and kept constant over a long operating time by the given thermal annealing conditions. The results are interpreted in terms of the stabilization of intrinsic polymorphism of the organic film's structure induced by thermal energy and leading the morphology to a lowest-energetic configuration.

  6. Tm2+ luminescent materials for solar radiation conversion devices

    NARCIS (Netherlands)

    Van der Kolk, E.

    2015-01-01

    A solar radiation conversion device is described that comprises a luminescent Tm 2+ inorganic material for converting solar radiation of at least part of the UV and/or visible and/or infra red solar spectrum into infrared solar radiation, preferably said infrared solar radiation having a wavelength

  7. Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

    International Nuclear Information System (INIS)

    Cheng, J.-A.; Chen, Chin H.; Shieh, H.-P.D.

    2009-01-01

    This paper discusses a new type of supramolecular material tris{5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato} aluminum(III), Al(SCarq) 3 , which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R a ) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq) 3 (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m -2 . Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE x,y (0.40, 0.47)

  8. Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.-A. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)], E-mail: jacheng.ac89g@nctu.edu.tw; Chen, Chin H. [Microelectronics and Information System Research Center, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Shieh, H.-P.D. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2009-02-15

    This paper discusses a new type of supramolecular material tris{l_brace}5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato{r_brace} aluminum(III), Al(SCarq){sub 3}, which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R{sub a}) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq){sub 3} (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m{sup -2}. Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE{sub x,y} (0.40, 0.47)

  9. Electromagnetic Radiofrequency Radiation Emitted from GSM Mobile Phones Decreases the Accuracy of Home Blood Glucose Monitors

    Science.gov (United States)

    Mortazavi, SMJ; Gholampour, M; Haghani, M; Mortazavi, G; Mortazavi, AR

    2014-01-01

    Mobile phones are two-way radios that emit electromagnetic radiation in microwave range. As the number of mobile phone users has reached 6 billion, the bioeffects of exposure to mobile phone radiation and mobile phone electromagnetic interference with electronic equipment have received more attention, globally. As self-monitoring of blood glucose can be a beneficial part of diabetes control, home blood glucose testing kits are very popular. The main goal of this study was to investigate if radiofrequency radiation emitted from a common GSM mobile phone can alter the accuracy of home blood glucose monitors. Forty five female nondiabetic students aged 17-20 years old participated in this study. For Control-EMF group (30 students), blood glucose concentration for each individual was measured in presence and absence of radiofrequency radiation emitted by a common GSM mobile phone (HTC touch, Diamond 2) while the phone was ringing. For Control- Repeat group (15 students), two repeated measurements were performed for each participant in the absence of electromagnetic fields. The magnitude of the changes between glucose levels in two repeated measurements (|ΔC|) in Control-Repeat group was 1.07 ± 0.88 mg/dl while this magnitude for Control-EMF group was 7.53 ± 4.76 mg/dl (P electromagnetic interference in home blood glucose monitors. It can be concluded that electromagnetic interference from mobile phones has an adverse effect on the accuracy of home blood glucose monitors. We suggest that mobile phones should be used at least 50 cm away from home blood glucose monitors. PMID:25505778

  10. Electromagnetic Radiofrequency Radiation Emitted from GSM Mobile Phones Decreases the Accuracy of Home Blood Glucose Monitors

    Directory of Open Access Journals (Sweden)

    SMJ Mortazavi

    2014-09-01

    Full Text Available Mobile phones are two-way radios that emit electromagnetic radiation in microwave range. As the number of mobile phone users has reached 6 billion, the bioeffects of exposure to mobile phone radiation and mobile phone electromagnetic interference with electronic equipment have received more attention, globally. As self-monitoring of blood glucose can be a beneficial part of diabetes control, home blood glucose testing kits are very popular. The main goal of this study was to investigate if radiofrequency radiation emitted from a common GSM mobile phone can alter the accuracy of home blood glucose monitors. Forty five female nondiabetic students aged 17-20 years old participated in this study. For Control-EMF group (30 students, blood glucose concentration for each individual was measured in presence and absence of radiofrequency radiation emitted by a common GSM mobile phone (HTC touch, Diamond 2 while the phone was ringing. For Control- Repeat group (15 students, two repeated measurements were performed for each participant in the absence of electromagnetic fields. The magnitude of the changes between glucose levels in two repeated measurements (ΔC in Control-Repeat group was 1.07 ± 0.88 mg/dl while this magnitude for Control-EMF group was 7.53 ± 4.76 mg/dl (P < 0.001, two-tailed test. To the best of our knowledge, this is the first study to assess the electromagnetic interference in home blood glucose monitors. It can be concluded that electromagnetic interference from mobile phones has an adverse effect on the accuracy of home blood glucose monitors. We suggest that mobile phones should be used at least 50 cm away from home blood glucose monitors.

  11. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  12. Tunable color parallel tandem organic light emitting devices with carbon nanotube and metallic sheet interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, Jorge; Desirena, Haggeo; De la Rosa, Elder [Centro de Investigaciones en Optica, A.P. 1-948, León, Guanajuato 37160 (Mexico); Papadimitratos, Alexios [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Zakhidov, Anvar A., E-mail: Zakhidov@utdallas.edu [Solarno Inc., Coppell, Texas 75019 (United States); University of Texas at Dallas, Richardson, Texas 75080 (United States); Energy Efficiency Center, National University of Science and Technology, MISiS, Moscow 119049 (Russian Federation)

    2015-11-21

    Parallel tandem organic light emitting devices (OLEDs) were fabricated with transparent multiwall carbon nanotube sheets (MWCNT) and thin metal films (Al, Ag) as interlayers. In parallel monolithic tandem architecture, the MWCNT (or metallic films) interlayers are an active electrode which injects similar charges into subunits. In the case of parallel tandems with common anode (C.A.) of this study, holes are injected into top and bottom subunits from the common interlayer electrode; whereas in the configuration of common cathode (C.C.), electrons are injected into the top and bottom subunits. Both subunits of the tandem can thus be monolithically connected functionally in an active structure in which each subunit can be electrically addressed separately. Our tandem OLEDs have a polymer as emitter in the bottom subunit and a small molecule emitter in the top subunit. We also compared the performance of the parallel tandem with that of in series and the additional advantages of the parallel architecture over the in-series were: tunable chromaticity, lower voltage operation, and higher brightness. Finally, we demonstrate that processing of the MWCNT sheets as a common anode in parallel tandems is an easy and low cost process, since their integration as electrodes in OLEDs is achieved by simple dry lamination process.

  13. Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

    2009-01-01

    This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

  14. Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

    DEFF Research Database (Denmark)

    Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C

    2012-01-01

    available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

  15. Serum and plasma for total and free anticonvulsant drug analyses: effects on EMIT assays and ultrafiltration devices.

    Science.gov (United States)

    Godolphin, W; Trepanier, J; Farrell, K

    1983-01-01

    The suitability of serum and plasma anticoagulated with heparin, EDTA, citrate, or oxalate was assessed for analysis of free and total phenytoin, carbamazepine, and valproic acid. The free fraction was isolated by ultrafiltration through FreeLevel devices (Syva, Palo Alto, CA). Serum, heparin, and EDTA plasma were satisfactory for both free and total phenytoin and carbamazepine. EDTA could not be used for EMIT (Syva) analysis of valproate. Citrate and, to a lesser degree, oxalate cause a significant negative interference in the concentration of these three drugs as measured both by EMIT and gas-liquid chromatography.

  16. New Materials and Device Designs for Organic Light-Emitting Diodes

    Science.gov (United States)

    O'Brien, Barry Patrick

    Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red

  17. Radiation Damage in Electronic Memory Devices

    OpenAIRE

    Fetahović, Irfan; Pejović, Milić; Vujisić, Miloš

    2013-01-01

    This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simula...

  18. Effects of radiation emitted from visual display terminals on the oral health status

    International Nuclear Information System (INIS)

    Kazem, H.H.

    2008-01-01

    This study was designed to investigate the effects of exposure to radiation emitted from visual display terminals (VDTs) on the oral health status; a cross sectional study was carried out on 100 participants both males and females with age ranging between 22- 40 years working in various places in Cairo. They were divided into two groups; the first consists of 50 subjects working in front of VDTs eight hours min. daily, min. 5 days/ week, 2 years or more, and the other group 50 subjects working away from any VDTs. Both groups were subjected to both oral and dental examinations, including soft tissues assessment by using gingival index (GI) and hard tissues assessment by using decayed, missed, filled (DMF) index. Saliva analysis was done including ph analysis by ph meter cyberscan 500 and trace elements analysis by ion chromatography and salivary immunoglobulin A (sIgA) analysis by ELISA, body temperature by using digital thermometer. The values were compared between both groups and also between before and after exposure in the exposed group. The results demonstrated that the difference in the mean values of either GI or DMF or ph or anions and cations or sIgA levels between exposed and non exposed groups or even between before and after exposure in the exposed group was found to be statistically insignificant. On the other hand there were significant changes in the mean values of body temperature between exposed and non-exposed group and also between before and after exposure in the exposed group. Accordingly, within the limits of this study we can conclude that radiation emitted from VDTs affects body temperature, but do not have any effect on oral health including; hard or soft tissues or salivary components. This might be explained by the radiation with very low energy emitted from VDTs

  19. Effects of radiation emitted from visual display terminals on the oral health status

    Energy Technology Data Exchange (ETDEWEB)

    Kazem, H H [National Center for Radiation Research and Technology, Atomic Energy Authority, Cairo (Egypt)

    2008-07-01

    This study was designed to investigate the effects of exposure to radiation emitted from visual display terminals (VDTs) on the oral health status; a cross sectional study was carried out on 100 participants both males and females with age ranging between 22- 40 years working in various places in Cairo. They were divided into two groups; the first consists of 50 subjects working in front of VDTs eight hours min. daily, min. 5 days/ week, 2 years or more, and the other group 50 subjects working away from any VDTs. Both groups were subjected to both oral and dental examinations, including soft tissues assessment by using gingival index (GI) and hard tissues assessment by using decayed, missed, filled (DMF) index. Saliva analysis was done including ph analysis by ph meter cyberscan 500 and trace elements analysis by ion chromatography and salivary immunoglobulin A (sIgA) analysis by ELISA, body temperature by using digital thermometer. The values were compared between both groups and also between before and after exposure in the exposed group. The results demonstrated that the difference in the mean values of either GI or DMF or ph or anions and cations or sIgA levels between exposed and non exposed groups or even between before and after exposure in the exposed group was found to be statistically insignificant. On the other hand there were significant changes in the mean values of body temperature between exposed and non-exposed group and also between before and after exposure in the exposed group. Accordingly, within the limits of this study we can conclude that radiation emitted from VDTs affects body temperature, but do not have any effect on oral health including; hard or soft tissues or salivary components. This might be explained by the radiation with very low energy emitted from VDTs.

  20. Soil moisture estimation using reflected solar and emitted thermal infrared radiation

    Science.gov (United States)

    Jackson, R. D.; Cihlar, J.; Estes, J. E.; Heilman, J. L.; Kahle, A.; Kanemasu, E. T.; Millard, J.; Price, J. C.; Wiegand, C. L.

    1978-01-01

    Classical methods of measuring soil moisture such as gravimetric sampling and the use of neutron moisture probes are useful for cases where a point measurement is sufficient to approximate the water content of a small surrounding area. However, there is an increasing need for rapid and repetitive estimations of soil moisture over large areas. Remote sensing techniques potentially have the capability of meeting this need. The use of reflected-solar and emitted thermal-infrared radiation, measured remotely, to estimate soil moisture is examined.

  1. A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

    2015-08-31

    We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

  2. Radiation Damage in Electronic Memory Devices

    Directory of Open Access Journals (Sweden)

    Irfan Fetahović

    2013-01-01

    Full Text Available This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.

  3. Hole injection enhancement in organic light emitting devices using plasma treated graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Jesuraj, P. Justin; Parameshwari, R. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli, 620 024, Tamil Nadu (India); Kanthasamy, K.; Koch, J. [Institut für Festkörperphysik, ATMOS, Appelstr. 2, D-30167, Hannover (Germany); Pfnür, H. [Institut für Festkörperphysik, ATMOS, Appelstr. 2, D-30167, Hannover (Germany); Laboratorium für Nano- und Quantene$ngineering, Schneiderberg 30, D-30167, Hannover (Germany); Jeganathan, K., E-mail: kjeganathan@yahoo.com [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli, 620 024, Tamil Nadu (India)

    2017-03-01

    Graphical abstract: Plasma treated Graphene oxide for hole injection enhancement in OLEDs. - Highlights: • Oxygen (O{sub 2}) and hydrogen (H{sub 2}) plasma exposed graphene oxide (GO) sheets have been demonstrated as hole buffer layers in OLEDs. • O{sub 2} plasma exposure induces assimilation of oxygen contents in GO lattice resulting in improved work function that reduced the hole injection barrier further. Whereas, H{sub 2} plasma contrastingly reduced the GO by excluding oxygen which ensuing lower work function. • X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigations reveal the capricious amount of oxygen in GO lattice and its corresponding work function variations. • GO and O{sub 2} plasma treated GO significantly improves the current efficiency of OLEDs more than one order with notable reduction in turn on voltage. - Abstract: The hole injection layer (HIL) with high work function (WF) is desirable to reduce the injection barrier between anode and hole transport layer in organic light emitting devices (OLED). Here, we report a novel approach to tune the WF of graphene oxide (GO) using oxygen and hydrogen plasma treatment and its hole injection properties in OLEDs. The mild exposure of oxygen plasma on GO (O{sub 2}-GO) significantly reduces the injection barrier by increasing the WF of anode (4.98 eV) through expansion of C−O bonds. In contrast, the hole injection barrier was drastically increased for hydrogen plasma treated GO (H{sub 2}-GO) layers as the WF is lowered by the contraction of C−O bond. By employing active O{sub 2}-GO as HIL in OLEDs found to exhibit superior current efficiency of 4.2 cd/A as compared to 3.3 cd/A for pristine GO. Further, the high injection efficiency of O{sub 2}-GO infused hole only device can be attributed to the improved energy level matching. Ultraviolet and X-ray photoelectron spectroscopy were used to correlate the WF of HIL infused anode towards the enhanced performance of

  4. Fabrication and performance of ACTFEL display devices using manganese-doped zinc germanate as a green-emitting electroluminescent layer

    International Nuclear Information System (INIS)

    Kim, Joo Han; Yoon, Kyung Ho

    2010-01-01

    Alternating-current thin-film electroluminescent (ACTFEL) display devices fabricated using manganese-doped zinc germanate (Zn 2 GeO 4 :Mn) as a green-emitting electroluminescent layer material are described. The ACTFEL display devices were fabricated with a standard bottom emission structure having a multilayer stack of thin films in the metal/semiconductor/insulator/ metal (MSIM) configuration. The device was constructed on a transparent Corning glass substrate through which the emitted EL light passed. The Zn 2 GeO 4 :Mn emission layer was synthesized by using a RF magnetron sputter deposition method, followed by post-annealing at 700 .deg. C in air ambient for 1 hour. The obtained Zn 2 GeO 4 :Mn films were found to be polycrystalline with a rhombohedral crystal structure. A green emission spectrum with a maximum at approximately 538 nm was produced from the fabricated device. The chromaticity color coordinates of the EL emission were measured to be x = 0.308 and y = 0.657. The device demonstrated a sharp increase in the intensity of green EL emission upon increasing the AC peak voltage applied to the device above a threshold of 148 V.

  5. Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Hoon; Lee, Ki-Heon; Jo, Dae-Yeon; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Lee, Yangjin; Hwang, Jun Yeon [Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 (Korea, Republic of)

    2014-09-29

    Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In{sub 1−x}−Ga{sub x}−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

  6. Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate

    International Nuclear Information System (INIS)

    Wong, F.L.; Fung, M.K.; Tong, S.W.; Lee, C.S.; Lee, S.T.

    2004-01-01

    A radio-frequency sputtering deposition method was applied to prepare indium tin oxide (ITO) on a plastic substrate, polyethylene terephthalate (PET). The correlation of deposition conditions and ITO film properties was systematically investigated and characterized. The optimal ITO films had a transmittance of over 90% in the visible range (400-700 nm) and a resistivity of 5.0x10 -4 Ω-cm. Sequentially α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminium, and magnesium-silver were thermally deposited on the ITO-coated PET substrate to fabricate flexible organic light-emitting diodes (FOLEDs). The fabricated devices had a maximum current efficiency of ∼4.1 cd/A and a luminance of nearly 4100 cd/m 2 at 100 mA/cm 2 . These values showed that the FOLEDs had comparable performance characteristics with the conventional organic light-emitting diodes made on ITO-coated glasses with the same device configuration

  7. Efficient single light-emitting layer pure blue phosphorescent organic light-emitting devices with wide gap host and matched interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yunlong; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-12-15

    In this work, we report the highly efficient pure blue electroluminescent (EL) device based on bis[(3,5-difluoro-4-cyanophenyl)pyridine]picolinate iridium(III) (FCNIrpic) doped 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi) film. The matched energy levels of FCNIrpic and CzSi are helpful in facilitating the trapping of carriers, while the high triplet energy of CzSi can well avoid the undesired reverse energy transfer. More importantly, the injection of holes was further accelerated by inserting 5 nm 4,4′,4″-Tri(9-carbazoyl)triphenylamine (TcTa) film between hole transport layer and lighting-emitting layer (EML) as interlayer. Consequently, EL performances were significantly enhanced attributed to wider recombination zone and better balance of holes and electrons. Interestingly, single-EML device displayed higher performances than those of double-EMLs device. Finally, pure blue EL device with the structure of ITO/MoO{sub 3} (3 nm)/TAPC (40 nm)/TcTa (5 nm)/FCNIrpic (20%): CzSi (30 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) realized the maximum brightness, current efficiency, power efficiency and external quantum efficiency up to 12,505 cd/m{sup 2}, 36.20 cd/A, 28.42 lm/W and 16.9%, respectively. Even at the high brightness of 1000 cd/m{sup 2}, current efficiency and external quantum efficiency up to 17.40 cd/A and 8.1%, respectively, can be retained by the same device.

  8. Fabrication and characterization of UV-emitting nanoparticles as novel radiation sensitizers targeting hypoxic tumor cells

    Science.gov (United States)

    Squillante, Michael R.; Jüstel, Thomas; Anderson, R. Rox; Brecher, Charles; Chartier, Daniel; Christian, James F.; Cicchetti, Nicholas; Espinoza, Sara; McAdams, Daniel R.; Müller, Matthias; Tornifoglio, Brooke; Wang, Yimin; Purschke, Martin

    2018-06-01

    Radiation therapy is one of the primary therapeutic techniques for treating cancer, administered to nearly two-thirds of all cancer patients. Although largely effective in killing cancer cells, radiation therapy, like other forms of cancer treatment, has difficulty dealing with hypoxic regions within solid tumors. The incomplete killing of cancer cells can lead to recurrence and relapse. The research presented here is investigating the enhancement of the efficacy of radiation therapy by using scintillating nanoparticles that emit UV photons. UV photons, with wavelengths between 230 nm and 280 nm, are able to inactivate cells due to their direct interaction with DNA, causing a variety of forms of damage. UV-emitting nanoparticles will enhance the treatment in two ways: first by generating UV photons in the immediate vicinity of cancer cells, leading to direct and oxygen-independent DNA damage, and second by down-converting the applied higher energy X-rays into softer X-rays and particles that are more efficiently absorbed in the targeted tumor region. The end result will be nanoparticles with a higher efficacy in the treatment of hypoxic cells in the tumor, filling an important, unmet clinical need. Our preliminary experiments show an increase in cell death using scintillating LuPO4:Pr nanoparticles over that achieved by the primary radiation alone. This work describes the fabrication of the nanoparticles, their physical characterization, and the spectroscopic characterization of the UV emission. The work also presents in vitro results that demonstrate an enhanced efficacy of cell killing with x-rays and a low unspecific toxicity of the nanoparticles.

  9. The effects of cosmic radiation on implantable medical devices

    International Nuclear Information System (INIS)

    Bradley, P.

    1996-01-01

    Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 Gγ) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A theoretical model which predicts the susceptibility of a RAM cell to secondary neutron cosmic radiation induced SEU is presented. The model correlates well within the statistical uncertainty associated with both the theoretical and field estimate. The predicted Soft Error Rate (SER) is 4.8 x l0 -12 upsets/(bit hr) compared to an observed upset rate of 8.5 x 10 -12 upsets/(bit hr) from 20 upsets collected over a total of 284672 device days. The predicted upset rate may increase by up to 20% when consideration is given to patients flying in aircraft The upset rate is also consistent with the expected geographical variations of the secondary cosmic ray neutron flux, although insufficient upsets precluded a statistically significant test. This is the first clinical data set obtained indicating the effects of cosmic radiation on implantable devices. Importantly, it may be used to predict the susceptibility of future to the implantable device designs to the effects of cosmic radiation

  10. Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

    Science.gov (United States)

    Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

    2017-07-25

    Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

  11. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    International Nuclear Information System (INIS)

    Park, Jong Hyeok; Kim, Chulhee; Kim, Young Chul

    2009-01-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  12. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong Hyeok [Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Chulhee [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Young Chul, E-mail: kimyc@khu.ac.k [Department of Chemical Engineering and RIC-CAMID, Kyung Hee University, Yongin-si, Kyunggi-do 499-701 (Korea, Republic of)

    2009-02-07

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  13. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Science.gov (United States)

    Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

    2009-02-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  14. Terrestrial radiation effects in ULSI devices and electronic systems

    CERN Document Server

    Ibe, Eishi H

    2014-01-01

    A practical guide on how mathematical approaches can be used to analyze and control radiation effects in semiconductor devices within various environments Covers faults in ULSI devices to failures in electronic systems caused by a wide variety of radiation fields, including electrons, alpha -rays, muons, gamma rays, neutrons and heavy ions. Readers will learn the environmental radiation features at the ground or avionics altitude. Readers will also learn how to make numerical models from physical insight and what kind of mathematical approaches should be implemented to analyze the radiation effects. A wide variety of mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them. The book provides the reader with the knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. It explains how electronic systems including servers and rout...

  15. Evaluation of an enclosed ultraviolet-C radiation device for decontamination of mobile handheld devices.

    Science.gov (United States)

    Mathew, J Itty; Cadnum, Jennifer L; Sankar, Thriveen; Jencson, Annette L; Kundrapu, Sirisha; Donskey, Curtis J

    2016-06-01

    Mobile handheld devices used in health care settings may become contaminated with health care-associated pathogens. We demonstrated that an enclosed ultraviolet-C radiation device was effective in rapidly reducing methicillin-resistant Staphylococcus aureus, and with longer exposure times, Clostridium difficile spores, on glass slides and reducing contamination on in-use mobile handheld devices. Published by Elsevier Inc.

  16. Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers

    Energy Technology Data Exchange (ETDEWEB)

    Willander, M; Nur, O; Zhao, Q X; Yang, L L [Department of Science and Technology, Linkoeping University, SE-601 74 Norrkoeping (Sweden); Lorenz, M; Cao, B Q; Zuniga Perez, J; Czekalla, C; Zimmermann, G; Grundmann, M [Institut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany); Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A [Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Boukos, N; Travlos, A [National Center for Scientific Research ' Demokritos' , Institute of Materials Science, GR 15310 Agia Paraskevi Attikis, Athens (Greece); Kwack, H S, E-mail: magwi@itn.liu.s [CEA-CNRS Group ' Nanophysique et Semiconducteurs' , Institut Neel, CNRS and Universit' e Joseph Fourier, F-38042 Grenoble (France)

    2009-08-19

    Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

  17. The transient radiation effects and hardness of programmed device

    International Nuclear Information System (INIS)

    Du Chuanhua; Xu Xianguo; Zhao Hailin

    2014-01-01

    A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

  18. Group III nitride semiconductors for short wavelength light-emitting devices

    Science.gov (United States)

    Orton, J. W.; Foxon, C. T.

    1998-01-01

    The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of the visible region and extending well out into the ultraviolet (UV) range. They form a complete series of ternary alloys which, in principle, makes available any band gap within this range and the fact that they also generate efficient luminescence has been the main driving force for their recent technological development. High brightness visible light-emitting diodes (LEDs) are now commercially available, a development which has transformed the market for LED-based full colour displays and which has opened the way to many other applications, such as in traffic lights and efficient low voltage, flat panel white light sources. Continuously operating UV laser diodes have also been demonstrated in the laboratory, exciting tremendous interest for high-density optical storage systems, UV lithography and projection displays. In a remarkably short space of time, the nitrides have therefore caught up with and, in some ways, surpassed the wide band gap II-VI compounds (ZnCdSSe) as materials for short wavelength optoelectronic devices. The purpose of this paper is to review these developments and to provide essential background material in the form of the structural, electronic and optical properties of the nitrides, relevant to these applications. We have been guided by the fact that the devices so far available are based on the binary compound GaN (which is relatively well developed at the present time), together with the ternary alloys AlGaN and InGaN, containing modest amounts of Al or In. We therefore concentrate, to a considerable extent, on the properties of GaN, then introduce those of the alloys as appropriate, emphasizing their use in the formation of the heterostructures employed in devices. The nitrides crystallize preferentially in the hexagonal wurtzite structure and devices have so

  19. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  20. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  1. A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-09-01

    Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

  2. Radiation dose distributions due to sudden ejection of cobalt device.

    Science.gov (United States)

    Abdelhady, Amr

    2016-09-01

    The evaluation of the radiation dose during accident in a nuclear reactor is of great concern from the viewpoint of safety. One of important accident must be analyzed and may be occurred in open pool type reactor is the rejection of cobalt device. The study is evaluating the dose rate levels resulting from upset withdrawal of co device especially the radiation dose received by the operator in the control room. Study of indirect radiation exposure to the environment due to skyshine effect is also taken into consideration in order to evaluate the radiation dose levels around the reactor during the ejection trip. Microshield, SHLDUTIL, and MCSky codes were used in this study to calculate the radiation dose profiles during cobalt device ejection trip inside and outside the reactor building. Copyright © 2016 Elsevier Ltd. All rights reserved.

  3. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  4. High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

    International Nuclear Information System (INIS)

    Wang, Zhaokui; Lou, Yanhui; Naka, Shigeki; Okada, Hiroyuki

    2010-01-01

    Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq 3 ), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m 2 were obtained by optimizing the mixing ratio of PyPySPyPy:Alq 3 :α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m 2 and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.

  5. Efficient, air-stable quantum dots light-emitting devices with MoO3 modifying the anode

    International Nuclear Information System (INIS)

    Meng, Xiangdong; Ji, Wenyu; Hua, Jie; Yu, Zhaoliang; Zhang, Yan; Li, Haibo; Zhao, Jialong

    2013-01-01

    In this work, we fabricated quantum dots light-emitting devices with hole-injection layer, molybdenum oxide (MoO 3 ) substituting for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) which is hygroscopic and acidic and, therefore, a source of interface instability. A significant enhancement in luminance and current efficiency in MoO 3 -containing devices was observed. In addition, MoO 3 -containing devices were more stable in the air than those with PEDOT:PSS as the hole injection layer. The hole injection and transport of the devices were studied by the J–V characteristics of the hole-only devices. The excellent performance of the devices was principally a result of MoO 3 possessing lower injection barrier for the hole and better stability than PEDOT:PSS. -- Highlights: • We fabricated QD-LEDs with MoO 3 substituting for PEDOT:PSS as hole-injection layer. • A enhancement in luminance and efficiency in MoO 3 -containing device was observed. • The enhancement was originated from the stability and easy hole injection of MoO 3

  6. Volatiles emitted from flowers by gamma-radiated and nonradiated Jasminum polyanthum Franch. in situ

    International Nuclear Information System (INIS)

    Christensen, L.P.; Jakobsen, H.B.; Kristiansen, K.; Moller, J.

    1997-01-01

    Volatile compounds emitted from flowers of Jasminum polyanthum Pepita in situ were collected by dynamic headspace technique and analyzed by GC-FID and GC-MS. A total of 32 compounds were identified. The flower scent was dominated by benzyl acetate (57.8%), p-cresol (12.2%), (E)-isoeugenol (9.7%), eugenol (3.5%), 2-methoxy-p-cresol (3.1%), linalool (3.0%), phenethyl acetate (2.1%), and (Z)3-hexenyl butyrate (1.9%). The strong scent of Pepita reduces its production potentialities as a pot plant, thus the possibility to reduce or modify the emission of volatiles from Pepita by mutagenesis was investigated. The average total yields of volatiles in Pepita were approximately 2800 ng flower-1 h-1, and in one gamma-radiated clone a significantly lower yield of 1050 ng flower-1 h-1 was found. The volatile profiles of the gamma-radiated plants were made up of the same 32 compounds found in Pepita. Significant differences in the headspace composition between Pepita and gamma-radiated plants were found for some of the major volatiles

  7. Resonance effects of transition radiation emitted from thin foil stacks using electron beam

    Energy Technology Data Exchange (ETDEWEB)

    Awata, Takaaki; Yajima, Kazuaki; Tanaka, Takashi [Kyoto Univ. (Japan). Faculty of Engineering; and others

    1997-03-01

    Transition Radiation(TR) X rays are expected to be a high brilliant X-ray source because the interference among TR X rays emitted from many thin foils placed periodically in vacuum can increase their intensity and make them quasi-monochromatic. In order to study the interference (resonance) effects of TR, we measured the energy spectra of TR for several sets of thin-foil stacks at various emission angles. It was found that the resonance effects of TR are classified into intrafoil and interfoil resonances and the intensity of TR X rays increases nonlinearly with increasing foil number, attributing to the interfoil resonance. It became evident that the brilliance of TR is as high as that of SR. (author)

  8. Radiation detection and measurement concepts, methods and devices

    CERN Document Server

    McGregor, Douglas

    2019-01-01

    This text on radiation detection and measurement is a response to numerous requests expressed by students at various universities, in which the most popularly used books do not provide adequate background material, nor explain matters in understandable terms. This work provides a modern overview of radiation detection devices and radiation measurement methods. The topics selected in the book have been selected on the basis of the author’s many years of experience designing radiation detectors and teaching radiation detection and measurement in a classroom environment.

  9. Adjustable radiation protection device of the fluoroscope DG 10

    International Nuclear Information System (INIS)

    Hoermann, D.

    1980-01-01

    In cooperation with the 'VEB Transformatoren- und Roentgenwerk Hermann Matern', Dresden, an adjustable radiation protection device has been developed. This supplementary equipment for fluoroscopes ensures a sufficient protection of the gonads against undesirable X radiation, can be handled easily and does not annoy patients, esp. children

  10. Radiation protection measuring device SSM-1

    International Nuclear Information System (INIS)

    Anon.

    1988-01-01

    Product information from the producer on a universal measuring instrument for alpha, beta and gamma radiation designed for stationary and field use by military, police and fire brigades. 4 figs. (qui)

  11. Improvement of a device for region radiation survey

    International Nuclear Information System (INIS)

    Poltinnikov, S.A.

    1978-01-01

    The electromechnanical device based on coding the turning angle of an automobile wheel by the number of electric pulses controlling the step motor of a film gate of gamma radiometer is proposed. The device is intended for automatizing recordings of gamma-radiation levels depending on a certain distance in a given terrain. The device has been tested at car speeds from 10 to 80 km/hr

  12. White organic light-emitting devices based on blue fluorescent dye combined with dual sub-monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Huishan, E-mail: yanghuishan1697@163.com

    2013-10-15

    White organic light-emitting devices have been realized by using highly blue fluorescent dye 4,4′-Bis(2,2-diphenyl-ethen-1-yl)-4,4′-di-(tert-butyl)phenyl(p-TDPVBi) and [2-methyl-6-[2-(2, 3,6,7-tetrahydro-1H, red fluorescent dye 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile(DCM2), together with well known green fluorescent dye quinacridone (QAD). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. The structure of the device is ITO/m-MTDATA (45 nm)/NPB(8 nm)/p-TDPVBi(15 nm)/DCM2(x nm)/Alq{sub 3} (5 nm)/QAD(y nm)/Alq{sub 3}(55 nm)/LiF(1 nm)/Al, where 4,4′,4′′-tris{N,-(3-methylphenyl)-N-phenylamine}triphenylamine (m-MTDATA) acts as a hole injection layer, N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biph-enyl-4, 4′-diamine (NPB) acts as a hole transport layer, p-TDPVBi acts as a blue emitting layer, DCM2 acts as a red emitting layer, QAD acts as a green emitting layer, tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) acts as an electron transport layer, and WOLEDs of devices A, B, C and D are different in layer thickness of DCM2 and QAD, respectively. To change the thickness of dual sub-monolayer DCM2 and QAD, the WOLEDs were obtained. When x, y=0.05, 0.1, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.4458, 0.4589) at 3 V to (0.3137, 0.3455) at 12 V that are well in the white region, and the color temperature and color rendering index were 5348 K and 85 at 8 V, respectively. Its maximum luminance was 35260 cd/m{sup 2} at 12 V, and maximum current efficiency and maximum power efficiency were 13.54 cd/A at 12 V and 6.68 lm/W at 5 V, respectively. Moreover, the current efficiency is largely insensitive to the applied voltage. The electroluminescence intensity of white EL devices varied only little at deferent dual sub-monolayer. Device D exhibited relatively high color rendering index (CRI) in the range of 88–90, which was essentially

  13. Transient radiation effects in GaAs semiconductor devices

    International Nuclear Information System (INIS)

    Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

    1988-01-01

    This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

  14. High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2013-02-15

    Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

  15. Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

    Science.gov (United States)

    Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

    2017-06-01

    Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

    Science.gov (United States)

    Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

    2017-10-18

    The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

  17. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    Energy Technology Data Exchange (ETDEWEB)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan, E-mail: canan.varlikli@ege.edu.tr; Ozsoy, Cihan; Zafer, Ceylan

    2015-08-31

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m{sup 2}, maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%.

  18. Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

    International Nuclear Information System (INIS)

    Demir, Nuriye; Oner, Ilker; Varlikli, Canan; Ozsoy, Cihan; Zafer, Ceylan

    2015-01-01

    Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m 2 , maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%

  19. Radiation-Tolerance Assessment of a Redundant Wireless Device

    Science.gov (United States)

    Huang, Q.; Jiang, J.

    2018-01-01

    This paper presents a method to evaluate radiation-tolerance without physical tests for a commercial off-the-shelf (COTS)-based monitoring device for high level radiation fields, such as those found in post-accident conditions in a nuclear power plant (NPP). This paper specifically describes the analysis of radiation environment in a severe accident, radiation damages in electronics, and the redundant solution used to prolong the life of the system, as well as the evaluation method for radiation protection and the analysis method of system reliability. As a case study, a wireless monitoring device with redundant and diversified channels is evaluated by using the developed method. The study results and system assessment data show that, under the given radiation condition, performance of the redundant device is more reliable and more robust than those non-redundant devices. The developed redundant wireless monitoring device is therefore able to apply in those conditions (up to 10 M Rad (Si)) during a severe accident in a NPP.

  20. Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2013-08-05

    Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

  1. Using a Commercial Ethernet PHY Device in a Radiation Environment

    Science.gov (United States)

    Parks, Jeremy; Arani, Michael; Arroyo, Roberto

    2014-01-01

    This work involved placing a commercial Ethernet PHY on its own power boundary, with limited current supply, and providing detection methods to determine when the device is not operating and when it needs either a reset or power-cycle. The device must be radiation-tested and free of destructive latchup errors. The commercial Ethernet PHY's own power boundary must be supplied by a current-limited power regulator that must have an enable (for power cycling), and its maximum power output must not exceed the PHY's input requirements, thus preventing damage to the device. A regulator with configurable output limits and short-circuit protection (such as the RHFL4913, rad hard positive voltage regulator family) is ideal. This will prevent a catastrophic failure due to radiation (such as a short between the commercial device's power and ground) from taking down the board's main power. Logic provided on the board will detect errors in the PHY. An FPGA (field-programmable gate array) with embedded Ethernet MAC (Media Access Control) will work well. The error detection includes monitoring the PHY's interrupt line, and the status of the Ethernet's switched power. When the PHY is determined to be non-functional, the logic device resets the PHY, which will often clear radiation induced errors. If this doesn't work, the logic device power-cycles the FPGA by toggling the regulator's enable input. This should clear almost all radiation induced errors provided the device is not latched up.

  2. BAKNET - Communication network for radiation monitoring devices

    International Nuclear Information System (INIS)

    Cohen, Y.; Wengrowicz, U.; Tirosh, D.; Barak, D.

    1997-01-01

    A system, based on a new concept of controlling and monitoring distributed radiation monitors, has been developed and approved at the NRCN. The system, named B AKNET Network , consists of a series of communication adapters connected to a main PC via an RS-485 communication network (see Fig. 1). The network's maximal length is 1200 meters and it enables connection of up to 128 adapters. The BAKNET adapters are designed to interface output signals of different types of stationary radiation monitors to a main PC. The BAKNET adapters' interface type includes: digital, analog, RS-232, and mixed output signals. This allows versatile interfacing of different stationary radiation monitors to the main computer. The connection to the main computer is via an RS-485 network, utilizing an identical communication protocol. The PC software, written in C ++ under MS-Windows, consists of two main programs. The first is the data collection program and the second is the Human Machine Interface (HMI). (authors)

  3. Efficient fluorescent red, green, and blue organic light-emitting devices with a blue host of spirobifluorene derivative

    Energy Technology Data Exchange (ETDEWEB)

    Lee, R.-H. [Department of Chemical and Material Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan (China)], E-mail: lerongho@yuntech.edu.tw; Huang, Y.-W.; Wang, Y.-Y. [Department of Chemical and Material Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan (China); Chang, H.-Y. [EChem Hightech CO., LTD, Hsin-Chu Industrial Park, Hu-Kou, Hsin-Chu, Taiwan (China)

    2008-06-02

    Efficient fluorescent blue, green, and red (RGB) organic light-emitting devices (OLEDs) were fabricated using a blue host material of pyrimidine-containing spirobifluorene derivative 2,7-bis[2-(4-tert-butylphenyl)pyrimidine-5-yl]-9,9'-spirobifluorene (TBPSF) doped with blue dye perylene, green dye 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-benzo[l] pyrano[6,7,8-ij] quinolizin-11-one (C545T), and red dye 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB), respectively. The brightness and current efficiency of the perylene doped blue device reached 10117 cd/m{sup 2} and 2.97 cd/A. Green emission of the C545T doped device reached 8500 cd/m{sup 2} and 13.0 cd/A. Red emission of the DCJTB doped device can be as high as 9000 cd/m{sup 2} and 2.0 cd/A, respectively. High color purity of the blue (Commission Internationale de L'Eclairage (CIE{sub x,y}) coordinates (CIE, x = 0.27, y = 0.24)), green (CIE, x = 0.19, y = 0.63) and red (CIE, x = 0.62, y = 0.37) emissions were achieved for RGB dyes doped TBPSF OLEDs. High brightness, large current efficiency, and good color purity of TBPSF-based RGB OLEDs were obtained by the configuration optimization device, such as inserting the hole and electron-injection materials, and suitable dopant content and light emitting layer thickness.

  4. Toxicologic study of electromagnetic radiation emitted by television and video display screens and cellular telephones on chickens and mice

    International Nuclear Information System (INIS)

    Bastide, M.; Youbicier-Simo, B.J.; Lebecq, J.C.; Giaimis, J.; Youbicier-Simo, B.J.

    2001-01-01

    The effects of continuous exposure of chick embryos and young chickens to the electromagnetic fields (EMFs) emitted by video display units (VDUs) and GSM cell phone radiation, either the whole spectrum emitted or attenuated by a copper gauze, were investigated. Permanent exposure to the EMFs radiated by a VDU was associated with significantly increased fetal loss (47-68%) and markedly depressed levels of circulating specific antibodies (lgG), corticosterone and melatonin. We have also shown that under chronic exposure conditions, GSM cell phone radiation was harmful to chick embryos, stressful for healthy mice and, in this species, synergistic with cancer insofar as it depleted stress hormones. The same pathological results were observed after substantial reduction of the microwaves radiated from the cell phone by attenuating them with a copper gauze. (author)

  5. A fluence device for precise radiation dosimetry

    International Nuclear Information System (INIS)

    Arnott, R.G.T.; Peak, M.J.

    1979-01-01

    An instrument is described which has been designed to ensure precise positioning of samples and sensing devices in three dimensions at all times during irradiation procedures. The system, which is both robust and sensitive, overcomes difficulties experienced when slight variations in the positioning of a sample under irradiation results in large changes in fluence. (UK)

  6. On the radiation emitted by a particle falling into a black hole in the semi-relativistic approximation

    International Nuclear Information System (INIS)

    Coretti, C.; Ferrari, V.

    1986-01-01

    In this paper the limits of applicability of the semi-relativistic approximation for estimating the radiation emitted in processes of capture of particles by black holes are discussed. It is shown that it gives reliable estimates in the case of spherically symmetric black holes, but it fails in the case of rotating black holes

  7. Device for converting electromagnetic radiation energy into electrical energy and method of manufacturing such a device

    NARCIS (Netherlands)

    2007-01-01

    Device (10) for converting electromagnetic radiation energy into electrical energy, comprising at least a photovoltaic element (11) with a radiation-sensitive surface, wherein a covering layer (12) of a material comprising a silicon compound, to which a rare earth element has been added, is present

  8. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Directory of Open Access Journals (Sweden)

    S.-T. Pham

    2018-02-01

    Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  9. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Science.gov (United States)

    Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

    2018-02-01

    Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  10. Modification in oxidative processes in muscle tissues exposed to laser- and light-emitting diode radiation.

    Science.gov (United States)

    Monich, Victor A; Bavrina, Anna P; Malinovskaya, Svetlana L

    2018-01-01

    Exposure of living tissues to high-intensity red or near-infrared light can produce the oxidative stress effects both in the target zone and adjacent ones. The protein oxidative modification (POM) products can be used as reliable and early markers of oxidative stress. The contents of modified proteins in the investigated specimens can be evaluated by the 2,4-dinitrophenylhydrazine assay (the DNPH assay). Low-intensity red light is able to decrease the activity of oxidative processes and the DNPH assay data about the POM products in the biological tissues could show both an oxidative stress level and an efficiency of physical agent protection against the oxidative processes. Two control groups of white rats were irradiated by laser light, the first control group by red light and the second one by near-infrared radiation (NIR).Two experimental groups were consequently treated with laser and red low-level light-emitting diode radiation (LED). One of them was exposed to red laser light + LED and the other to NIR + LED. The fifth group was intact. Each group included ten animals. The effect of laser light was studied by methods of protein oxidative modifications. We measured levels of both induced and spontaneous POM products by the DNPH assay. The dramatic increase in levels of POM products in the control group samples when compared with the intact group data as well as the sharp decrease in the POM products in the experimental groups treated with LED low-level light were statistically significant (p ≤ 0.05). Exposure of skeletal muscles to high-intensity red and near-infrared laser light causes oxidative stress that continues not less than 3 days. The method of measurement of POM product contents by the DNPH assay is a reliable test of an oxidative process rate. Red low-intensity LED radiation can provide rehabilitation of skeletal muscle tissues treated with high-intensity laser light.

  11. Radiation dose distributions due to sudden ejection of cobalt device

    International Nuclear Information System (INIS)

    Abdelhady, Amr

    2016-01-01

    The evaluation of the radiation dose during accident in a nuclear reactor is of great concern from the viewpoint of safety. One of important accident must be analyzed and may be occurred in open pool type reactor is the rejection of cobalt device. The study is evaluating the dose rate levels resulting from upset withdrawal of co device especially the radiation dose received by the operator in the control room. Study of indirect radiation exposure to the environment due to skyshine effect is also taken into consideration in order to evaluate the radiation dose levels around the reactor during the ejection trip. Microshield, SHLDUTIL, and MCSky codes were used in this study to calculate the radiation dose profiles during cobalt device ejection trip inside and outside the reactor building. - Highlights: • This study aims to calculate the dose rate profiles after cobalt device ejection from open-pool-type reactor core. • MicroShield code was used to evaluate the dose rates inside the reactor control room. • McSKY code was used to evaluate the dose rates outside the reactor building. • The calculated dose rates for workers are higher than the permissible limits after 18 s from device ejection.

  12. Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

    Science.gov (United States)

    Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

    2009-12-01

    Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

  13. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  14. Decontamination method and device for radiation contaminated product

    International Nuclear Information System (INIS)

    Morikawa, Kenji; Ohinata, Hiroshi; Omata, Kazuo; Sato, Toshihiko; Nakajima, Yoshihiko; Ichikawa, Seigo.

    1996-01-01

    In the present invention, radiation contaminated products generated during shot peening are decontaminated by a chelating agent, and the chelating agent is removed from the radiation contaminated products. Then the temperature of the radiation contaminated products is elevated by hot blowing at a temperature higher than a boiling point of the solvent. Then, a solvent is added to the radiation contaminated products and the solvent is evaporated abruptly. The solution of the chelating agent remained while being deposited thereto is removed by evaporation to remove it from the radiation contaminated products together with the solvent. With such procedures, all of the decontamination steps can be completed in one device without requiring a large space or not moving the radiation contaminated products on every step. (T.M.)

  15. Infrared light-emitting diode radiation causes gravitropic and morphological effects in dark-grown oat seedlings

    Science.gov (United States)

    Johnson, C. F.; Brown, C. S.; Wheeler, R. M.; Sager, J. C.; Chapman, D. K.; Deitzer, G. F.

    1996-01-01

    Oat (Avena sativa cv Seger) seedlings were irradiated with IR light-emitting diode (LED) radiation passed through a visible-light-blocking filter. Infrared LED irradiated seedlings exhibited differences in growth and gravitropic response when compared to seedlings grown in darkness at the same temperature. Thus, the oat seedlings in this study were able to detect IR LED radiation. These findings call into question the use of IR LED as a safe-light for some photosensitive plant response experiments. These findings also expand the defined range of wavelengths involved in radiation-gravity (light-gravity) interactions to include wavelengths in the IR region of the spectrum.

  16. Radiation damage assessment of Nb tunnel junction devices

    International Nuclear Information System (INIS)

    King, S.E.; Magno, R.; Maisch, W.G.

    1991-01-01

    This paper reports on the radiation hardness of a new technology using Josephson junctions that was explored by an irradiation using a fluence of 7.6 x 10 14 protons/cm 2 at an energy of 63 MeV from the U.C. Davis cyclotron. In what the authors believe is the first radiation assessment of Nb/Al 2 O 3 /Nb devices, the permanent damage in these devices was investigated. No permanent changes in the I-V characteristics of the junctions were observed indicating no significant level of material defects have occurred at this level of irradiation

  17. The research of nuclear experiment radiation environment wireless alarm device

    International Nuclear Information System (INIS)

    Wang Xiaoqiong; Wang Pan; Fang Fang

    2009-01-01

    This article introduces based on monolithic integrated circuit's nuclear experiment radiation environment wireless alarm device's software and hardware design. The system by G-M tube, high-pressured module, signal conditioning circuit, power source module, monolithic integrated circuit and wireless transmission module is composed. The device has low power consumption, high performance, high accuracy detection, easy maintenance, small size, simple operation, and other features, and has a broad application prospects. (authors)

  18. The effect of electromagnetic radiation emitted by display screens on cell oxygen metabolism - in vitro studies.

    Science.gov (United States)

    Lewicka, Małgorzata; Henrykowska, Gabriela A; Pacholski, Krzysztof; Śmigielski, Janusz; Rutkowski, Maciej; Dziedziczak-Buczyńska, Maria; Buczyński, Andrzej

    2015-12-10

    Research studies carried out for decades have not solved the problem of the effect of electromagnetic radiation of various frequency and strength on the human organism. Due to this fact, we decided to investigate the changes taking place in human blood platelets under the effect of electromagnetic radiation (EMR) emitted by LCD monitors. The changes of selected parameters of oxygen metabolism were measured, i.e. reactive oxygen species concentration, enzymatic activity of antioxidant defence proteins - superoxide dismutase (SOD-1) and catalase (CAT) - and malondialdehyde concentration (MDA). A suspension of human blood platelets was exposed to electromagnetic radiation of 1 kHz frequency and 150 V/m and 220 V/m intensity for 30 and 60 min. The level of changes of the selected parameters of oxidative stress was determined after the exposure and compared to the control samples (not exposed). The measurements revealed an increase of the concentration of reactive oxygen species. The largest increase of ROS concentration vs. the control sample was observed after exposure to EMF of 220 V/m intensity for 60 min (from x = 54.64 to x = 72.92). The measurement of MDA concentration demonstrated a statistically significant increase after 30-min exposure to an EMF of 220 V/m intensity in relation to the initial values (from x = 3.18 to x = 4.41). The enzymatic activity of SOD-1 decreased after exposure (the most prominent change was observed after 60-min and 220 V/m intensity from x = 3556.41 to x = 1084.83). The most significant change in activity of catalase was observed after 60 min and 220 v/m exposure (from x = 6.28 to x = 4.15). The findings indicate that exposure to electromagnetic radiation of 1 kHz frequency and 150 V/m and 220 V/m intensity may cause adverse effects within blood platelets' oxygen metabolism and thus may lead to physiological dysfunction of the organism.

  19. Effects of radiofrequency radiation emitted by cellular telephones on the cognitive functions of humans.

    Science.gov (United States)

    Eliyahu, Ilan; Luria, Roy; Hareuveny, Ronen; Margaliot, Menachem; Meiran, Nachshon; Shani, Gad

    2006-02-01

    The present study examined the effects of exposure to Electromagnetic Radiation emitted by a standard GSM phone at 890 MHz on human cognitive functions. This study attempted to establish a connection between the exposure of a specific area of the brain and the cognitive functions associated with that area. A total of 36 healthy right-handed male subjects performed four distinct cognitive tasks: spatial item recognition, verbal item recognition, and two spatial compatibility tasks. Tasks were chosen according to the brain side they are assumed to activate. All subjects performed the tasks under three exposure conditions: right side, left side, and sham exposure. The phones were controlled by a base station simulator and operated at their full power. We have recorded the reaction times (RTs) and accuracy of the responses. The experiments consisted of two sections, of 1 h each, with a 5 min break in between. The tasks and the exposure regimes were counterbalanced. The results indicated that the exposure of the left side of the brain slows down the left-hand response time, in the second-later-part of the experiment. This effect was apparent in three of the four tasks, and was highly significant in only one of the tests. The exposure intensity and its duration exceeded the common exposure of cellular phone users.

  20. Impact of electromagnetic radiation emitted by monitors on changes in the cellular membrane structure and protective antioxidant effect of vitamin A - In vitro study.

    Science.gov (United States)

    Lewicka, Małgorzata; Henrykowska, Gabriela; Zawadzka, Magdalena; Rutkowski, Maciej; Pacholski, Krzysztof; Buczyński, Andrzej

    2017-07-14

    The increasing number of devices emitting electromagnetic radiation (EMR) in people's everyday life attracted the attention of researchers because of possible adverse effects of this factor on living organisms. One of the EMR effect may be peroxidation of lipid membranes formed as a result of free radical process. The article presents the results of in vitro studies aimed at identifying changes in malondialdehyde (MDA) concentration - a marker of lipid peroxidation and antioxidant role of vitamin A during the exposure of blood platelets to electromagnetic radiation generated by liquid-crystal-display (LCD) monitors. Electromagnetic radiation emitted by LCD monitors is characterized by parameters: 1 kHz frequency and 220 V/m intensity (15 cm from display screen). The time of exposure was 30 and 60 min. The study was conducted on porcine blood platelets. The samples were divided into 6 groups: unexposed to radiation, unexposed + vitamin A, exposed for 30 min, exposed for 30 min + vitamin A, exposed for 60 min, exposed for 60 min + vitamin A. The MDA concentration in blood platelets increases significantly as compared to control values after 60 min of exposure to EMR. A significant decrease in MDA concentration after the addition of vitamin A was noticed. In the blood samples exposed to EMR for 30 and 60 min the MDA concentration was significantly increased by addition of vitamin A. The results show the possibly negative effect of electromagnetic radiation on the cellular membrane structure manifested by changes in malondialdehyde concentration and indicate a possible protective role of vitamin A in this process. Int J Occup Med Environ Health 2017;30(5):695-703. This work is available in Open Access model and licensed under a CC BY-NC 3.0 PL license.

  1. Enhancing light out-coupling of organic light-emitting devices using indium tin oxide-free low-index transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yi-Hsiang; Lu, Chun-Yang; Tsai, Shang-Ta; Tsai, Yu-Tang; Chen, Chien-Yu; Tsai, Wei-Lung; Lin, Chun-Yu; Chang, Hong-Wei; Lee, Wei-Kai; Jiao, Min; Wu, Chung-Chih, E-mail: wucc@ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Electronics Engineering, and Innovative Photonics Advanced Research Center (i-PARC), National Taiwan University, Taipei 10617, Taiwan (China)

    2014-05-05

    With its increasing and sufficient conductivity, the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been capable of replacing the widely used but less cost-effective indium tin oxides (ITOs) as alternative transparent electrodes for organic light-emitting devices (OLEDs). Intriguingly, PEDOT:PSS also possesses an optical refractive index significantly lower than those of ITO and typical organic layers in OLEDs and well matching those of typical OLED substrates. Optical simulation reveals that by replacing ITO with such a low-index transparent electrode, the guided modes trapped within the organic/ITO layers in conventional OLEDs can be substantially suppressed, leading to more light coupled into the substrate than the conventional ITO device. By applying light out-coupling structures onto outer surfaces of substrates to effectively extract radiation into substrates, OLEDs using such low-index transparent electrodes achieve enhanced optical out-coupling and external quantum efficiencies in comparison with conventional OLEDs using ITO.

  2. Structural refinement, band-gap analysis and optical properties of GdAlO3 nanophosphors influenced by Dy3+ ion concentrations for white light emitting device applications

    International Nuclear Information System (INIS)

    Jisha, P K; Naik, Ramachandra; Prashantha, S C; Nagaswarupa, H P; Nagabhushana, H; Basavaraj, R B; Sharma, S C; Prasad, Daruka

    2016-01-01

    Nanosized GdAlO 3 phosphors activated with Dy 3+ were prepared by a combustion method. Synthesized phosphors were calcined at 1000 °C for 3 h in order to achieve crystallinity. Powder x-ray diffraction (XRD), scanning electron microscope (SEM) and transmission electron microscope (TEM) analysis was used to characterize the prepared product. The orthorhombic phase was observed in the XRD pattern. The particle size of the samples was calculated as around 25 nm. The SEM images show an irregular shape of the prepared nanophosphor. Functional groups of the phosphors were examined by Fourier transform infrared (FTIR) spectroscopy. Photoluminescence (PL) properties of Dy 3+ doped GdAlO 3 for near-ultraviolet excitation (352 nm) were studied in order to investigate the possibility of its use in white light emitting device applications. Judd–Ofelt intensity parameters, radiative transition rate (A T ) and radiative lifetimes (τ rad ) were evaluated from the emission spectrum by adopting a standard procedure. The Commission International de l’Eclairage (CIE) color coordinates and correlated color temperature (CCT) are studied for the optimized phosphor. It is found that the color coordinates of Dy 3+ doped GdAlO 3 powders fall in the white region of the CIE diagram, and the average CCT value was found to be about 6276 K. Therefore, the present phosphor is highly useful for display applications. (paper)

  3. Device for the integral measurement of ionizing radiations

    International Nuclear Information System (INIS)

    Micheron, Francois.

    1980-01-01

    This invention relates to devices for the integral determination of ionizing radiations, particularly to the construction of a portable dosemeter. Portable measuring instruments have been suggested in the past, particularly dosemeters in which the discharge of a capacitor under the action of ionizing radiations is measured. Since the charge of a capacitor is not stable owing to dielectric imperfections, these measuring instruments have to be recalibrated at frequent intervals. To overcome this drawback, the invention suggests using the discharge of an electret, electrically charged to a pre-set initial value, under the action of ionizing radiations, as the transducer means of a dosemeter used in conjunction with display or warning systems [fr

  4. Improved color purity and efficiency by a coguest emitter system in doped red light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)]. E-mail: mdg1014@ciac.jl.cn

    2007-01-15

    We demonstrate red organic light-emitting diodes (OLEDs) with improved color purity and electroluminescence (EL) efficiency by codoping a green fluorescent sensitizer 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H -(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) as the second dopant and a red fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as the lumophore into tris(8-hydroquinoline) aluminum (Alq{sub 3}) host. It was found that the C545T dopant did not by itself emit but assisted the carrier trapping from the host Alq{sub 3} to the red emitting dopant. The red OLEDs realized by this approach not only kept the purity of the emission color, but also significantly improved the EL efficiency. The current efficiency and power efficiency, respectively, reached 12cd/A at a current density of 0.3mA/cm{sup 2} and 10lm/W at a current density of 0.02mA/cm{sup 2}, which are enhanced by 1.4 and 2.6 times compared with devices where the emissive layer is composed of the DCJTB doped Alq{sub 3}, and a stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in a wide range of voltage. Our results indicate that the coguest system is a promising method for obtaining high-efficiency red OLEDs.

  5. Radiation sensitive devices and systems for detection of radioactive materials and related methods

    Science.gov (United States)

    Kotter, Dale K

    2014-12-02

    Radiation sensitive devices include a substrate comprising a radiation sensitive material and a plurality of resonance elements coupled to the substrate. Each resonance element is configured to resonate responsive to non-ionizing incident radiation. Systems for detecting radiation from a special nuclear material include a radiation sensitive device and a sensor located remotely from the radiation sensitive device and configured to measure an output signal from the radiation sensitive device. In such systems, the radiation sensitive device includes a radiation sensitive material and a plurality of resonance elements positioned on the radiation sensitive material. Methods for detecting a presence of a special nuclear material include positioning a radiation sensitive device in a location where special nuclear materials are to be detected and remotely interrogating the radiation sensitive device with a sensor.

  6. Advanced devices and systems for radiation measurements

    International Nuclear Information System (INIS)

    Knoll, G.F.; Wehe, D.K.; He, Z.; Barrett, C.; Miyamoto, J.

    1996-06-01

    The authors' most recent work continues their long-standing efforts to develop semiconductor detectors based on the collection of only a single type of charge carrier. Their best results are an extension of the principle of coplanar electrodes first described by Paul Luke of Lawrence Berkeley Laboratory 18 months ago. This technique, described in past progress reports, has the effect of deriving an output signal from detectors that depends only on the motion of carriers close to one surface. Since nearly all of these carriers are of one type (electrons) that are attracted to that electrode, the net effect is to nearly eliminate the influence of hole motion on the properties of the output signal. The result is that the much better mobility of electrons in compound semiconductors materials such as CZT can now be exploited without the concurrent penalty of poor hole collection. They have also developed new techniques in conjunction with the coplanar electrode principle that extends the technique into a new dimension. By proper processing of signals from the opposite electrode (the cathode) from the coplanar surface, they are able to derive a signal that is a good indication of the depth of interaction at which the charge carriers were initially formed. They have been the first group to demonstrate this technique, and examples of separate pulse height spectra recorded at a variety of different depths of interaction are shown in several of the figures that follow. Obtaining depth information is one step in the direction of obtaining volumetric point-of-interaction information from the detector. If one could known the coordinates of each specific interaction, then corrections could be applied to account for the inhomogeneities that currently plague many room-temperature devices

  7. SiC detectors to monitor ionizing radiations emitted from nuclear events and plasmas

    Science.gov (United States)

    Torrisi, L.; Cannavò, A.

    2016-09-01

    Silicon Carbide (SiC) semiconductor detectors are increasingly employed in Nuclear Physics for their advantages with respect to traditional silicon (Si). Such detectors show an energy resolution, charge mobility, response velocity and detection efficiency similar to Si detectors. However, the higher band gap (3.26 eV), the lower leakage current (∼10 pA) maintained also at room temperature, the higher radiation hardness and the higher density with respect to Si represent some indisputable advantages characterizing such detectors. The devices can be employed at high temperatures, at high absorbed doses and in the case of high visible light intensities, for example, in plasma, for limited exposition times without damage. Generally SiC Schottky diodes are employed in reverse polarization with an active region depth of the order of 100 µm, purity below 1014 cm-3 and an active area lower than 1 cm2. Measurements in the regime of proportionality with the radiation energy released in the active region and measurements in time-of-flight configuration are employed for nuclear emission events produced at both low and high fluences. Alpha spectra demonstrated an energy resolution of about 1.3% at 5.8 MeV. Radiation emission from laser-generated plasma can be monitored in terms of detected photons, electrons and ions, using the laser pulse as a start signal and the radiation detection as a stop signal, enabling to measure the ion velocity by knowing the target-detector flight distance. SiC spectra acquired in the Messina University laboratories using radioactive ion sources and at the PALS laboratory facility in Prague (Czech Republic) are presented. A preliminary study of the use of SiC detectors, embedded in a water equivalent polymer, as a dosimeter is presented and discussed.

  8. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Mesta, M.; Coehoorn, R.; Bobbert, P. A. [Department of Applied Physics, Technische Universiteit Eindhoven, P.O. Box 513, NL-5600 MB Eindhoven (Netherlands); Eersel, H. van [Simbeyond B.V., P.O. Box 513, NL-5600 MB Eindhoven (Netherlands)

    2016-03-28

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  9. The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

    2018-02-01

    We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

  10. White organic light-emitting devices with tunable color emission fabricated utilizing exciplex formation at heterointerfaces including m-MDATA

    International Nuclear Information System (INIS)

    Lee, Kwang Seop; Choo, Dong Chul; Kim, Tae Whan

    2011-01-01

    The electrical and the optical properties of organic light-emitting devices (OLEDs) fabricated utilizing a 4,4',4''-tris(2-methylphenyl-phenylamino)triphenylamine (m-MTDATA) were investigated to clarify the effect of exciplex on their color stabilization and color purity. The electrons combined with the holes at heterointerfaces between the m-MTDATA layer and the 9,10-di(2-naphthyl)anthracene (MADN) and the 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM1) emitting layer (EML) resulted in the formation of the exciplex. The emission peak of the electroluminescence spectra for the OLEDs fabricated utilizing the m-MTDATA layer shifted to a lower energy side in comparison with that of the EML. This was due to the interaction of the holes in the m-MTDATA layer and the electrons in the MADN EML. Carriers in white OLEDs (WOLEDs) with exciplex emissions existed at the heterointerfaces between the m-MTDATA and the EML because the DCM1 EML was too thin to affect the EL peak related to the m-MTDATA layer. The Commission Internationale de l'Eclairage coordinates of WOLEDs at 9.5 V were (0.33, 0.36), and their maximum current efficiency at 46 mA/cm 2 was 2.03 cd/A.

  11. White organic light-emitting devices with tunable color emission fabricated utilizing exciplex formation at heterointerfaces including m-MDATA

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kwang Seop; Choo, Dong Chul; Kim, Tae Whan, E-mail: twk@hanyang.ac.kr

    2011-05-31

    The electrical and the optical properties of organic light-emitting devices (OLEDs) fabricated utilizing a 4,4',4''-tris(2-methylphenyl-phenylamino)triphenylamine (m-MTDATA) were investigated to clarify the effect of exciplex on their color stabilization and color purity. The electrons combined with the holes at heterointerfaces between the m-MTDATA layer and the 9,10-di(2-naphthyl)anthracene (MADN) and the 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl aminostyryl)-4H-pyran (DCM1) emitting layer (EML) resulted in the formation of the exciplex. The emission peak of the electroluminescence spectra for the OLEDs fabricated utilizing the m-MTDATA layer shifted to a lower energy side in comparison with that of the EML. This was due to the interaction of the holes in the m-MTDATA layer and the electrons in the MADN EML. Carriers in white OLEDs (WOLEDs) with exciplex emissions existed at the heterointerfaces between the m-MTDATA and the EML because the DCM1 EML was too thin to affect the EL peak related to the m-MTDATA layer. The Commission Internationale de l'Eclairage coordinates of WOLEDs at 9.5 V were (0.33, 0.36), and their maximum current efficiency at 46 mA/cm{sup 2} was 2.03 cd/A.

  12. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    Science.gov (United States)

    Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P. A.

    2016-03-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  13. Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

    International Nuclear Information System (INIS)

    Mesta, M.; Coehoorn, R.; Bobbert, P. A.; Eersel, H. van

    2016-01-01

    Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance as a function of J in a multilayer hybrid white OLED that combines fluorescent blue with phosphorescent green and red emission. We investigate two models for TTA and TPQ involving the phosphorescent green and red emitters: short-range nearest-neighbor quenching and long-range Förster-type quenching. Short-range quenching predicts roll-off to occur at much higher J than measured. Taking long-range quenching with Förster radii for TTA and TPQ equal to twice the Förster radii for exciton transfer leads to a fair description of the measured IQE-J curve, with the major contribution to the roll-off coming from TPQ. The measured decrease of the ratio of phosphorescent to fluorescent component of the emitted light with increasing J is correctly predicted. A proper description of the J-dependence of the ratio of red and green phosphorescent emission needs further model refinements.

  14. Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

    Directory of Open Access Journals (Sweden)

    Kai-Yu Peng

    2014-01-01

    Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

  15. Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

    Science.gov (United States)

    Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

    2016-01-01

    Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

  16. Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

    Science.gov (United States)

    Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

    2012-05-01

    This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

  17. Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices

    International Nuclear Information System (INIS)

    Satoh, Toshikazu; Fujikawa, Hisayoshi; Taga, Yasunori

    2005-01-01

    The influence of indium tin oxide (ITO) electrodes deposited at room temperature (ITO-RT) on the properties of organic light-emitting devices (OLEDs) has been studied. The OLED on the ITO-RT showed an obvious shorter lifetime and higher operating voltage than that on the conventional ITO electrode deposited at 573 K. The result of an in situ x-ray photoelectron spectroscopy analysis of the ITO electrode and the organic layer suggested that many of the hydroxyl groups that originate in the amorphous structure of the ITO-RT electrode oxidize the organic layer. The performance of the OLED on the ITO-RT is able to be explained by the oxidation of the organic layer

  18. Surface morphology and interdiffusion of LiF in Alq3-based organic light-emitting devices.

    Science.gov (United States)

    Lee, Young Joo; Li, Xiaolong; Kang, Da-Yeon; Park, Seong-Sik; Kim, Jinwoo; Choi, Jeong-Woo; Kim, Hyunjung

    2008-09-01

    Highly efficient organic light-emitting devices (OLEDs) have been realized by insertion of a thin insulating lithium fluoride (LiF) layer between aluminum (Al) cathode and an electron transport layer, tris-(8-hydroxyquinoline) aluminum (Alq(3)). In this paper, we study the surface morphology of LiF on Alq(3) by synchrotron X-ray scattering and atomic force microscopy (AFM) as a function of thickness of LiF. We also study the interdiffusion of LiF into Al cathode as well as into Alq(3) layer as a function of temperature. Initially, LiF molecules are distributed randomly as clusters on the Alq(3) layer and then gradually form a layer as increasing LiF thickness. The interdiffusion of LiF into Al occurs more actively than into Alq(3) in annealing process. LiF on Alq(3) induces the ordering of Al to (111) direction strongly with increasing LiF thickness.

  19. High-Color-Quality White Top-Emitting Organic Electroluminescent Devices Based on Both Exciton and Electroplex Emission

    Science.gov (United States)

    Zhang, Mingxiao; Chen, Zhijian; Xiao, Lixin; Qu, Bo; Gong, Qihuang

    2011-08-01

    A high-color-quality white top-emitting organic electroluminescent device (TOLED) with a simple structure was fabricated using both exciton and electroplex emission. White emission was achieved by combining the exciton emission of 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi) and the broad band emission of electroplex generated between DPVBi and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The white emission spectra showed excellent stability at different bias voltages. By inserting a blend film of DPVBi:BCP and adjusting the ratio of DPVBi to BCP in the blend film, the CIE coordinates of the white emission can be tuned to (0.30, 0.33) and the electroluminescence efficiency can also be enhanced.

  20. New cyclometalated iridium(III) complex as a phosphorescent dopant in organic light emitting devices

    Science.gov (United States)

    Ivanov, P.; Tomova, R.; Petrova, P.; Stanimirov, S.; Petkov, I.

    2014-05-01

    A new cyclometalated iridium (III) bis[2-(4-chlorophenyl)benzothiazolato-N,C2]-acetylacetonate, (Cl-bt)2Ir(acac), was synthesized and identified by 1H NMR and elemental analysis. The application was studied of the new compound as a dopant in the hole transporting layer (HTL) of the following organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was 4,4'-bis(9H-carbazol-9-yl)biphenyl (CBP) or N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), incorporated in a poly(N-vinylcarbazole) (PVK) matrix; EL was an electroluminescent layer of bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy) aluminum (BAlq); and ETL was an electron-transporting layer of bis[2-(2-benzothiazoly) phenolato]zinc(II) (Zn(btz)2). We established that the electroluminescence spectra of the OLEDs at different dopant concentrations were basically the sum of the greenish-blue emission of BAlq and the yellowish-green emission of the Ir complex. It was also found that increasing the dopant concentration resulted in an increase in the relative electroluminescent intensity of the Ir complex emission, while that of BAlq decreased, thus a fine tuning of the OLED color was observed.

  1. Ultraviolet spectral distribution and erythema-weighted irradiance from indoor tanning devices compared with solar radiation exposures.

    Science.gov (United States)

    Sola, Yolanda; Baeza, David; Gómez, Miguel; Lorente, Jerónimo

    2016-08-01

    Concern regarding the impact of indoor tanning devices on human health has led to different regulations and recommendations, which set limits on erythema-weighted irradiance. Here, we analyze spectral emissions from 52 tanning devices in Spanish facilities and compare them with surface solar irradiance for different solar zenith angles. Whereas most of the devices emitted less UV-B radiation than the midday summer sun, the unweighted UV-A irradiance was 2-6 times higher than solar radiation. Moreover, the spectral distributions of indoor devices were completely different from that of solar radiation, differing in one order of magnitude at some UV-A wavelengths, depending on the lamp characteristics. In 21% of the devices tested, the erythema-weighted irradiance exceeded 0.3Wm(-2): the limit fixed by the European standard and the Spanish regulation. Moreover, 29% of the devices fall within the UV type 4 classification, for which medical advice is required. The high variability in erythema-weighted irradiance results in a wide range of exposure times to reach 1 standard erythemal dose (SED: 100Jm(-2)), with 62% of devices requiring exposures of UV-A dose during this time period would be from 1.4 to 10.3 times more than the solar UV-A dose. Copyright © 2016 Elsevier B.V. All rights reserved.

  2. Single-doped white organic light-emitting device with an external quantum efficiency over 20%.

    Science.gov (United States)

    Fleetham, Tyler; Ecton, Jeremy; Wang, Zixing; Bakken, Nathan; Li, Jian

    2013-05-14

    A white OLED with a maximum EQE of 20.1%, CIE coordinates of (0.33, 0.33) and CRI of 80 is fabricated based on platinum(II) bis(N-methyl-imidazolyl)benzene chloride (Pt-16). The device emission spectrum and the chemical structure of Pt-16 are shown in the inset of the efficiency versus luminance graph. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Decay Curves and Half-Lives of Gamma-Emitting States from a Study of Prompt Fission Gamma Radiation

    Energy Technology Data Exchange (ETDEWEB)

    Albinsson, H [Chalmers Univ. of Technology, Goeteborg (SE)

    1971-04-15

    Measurements were made on the time distributions of the prompt gamma radiation emitted from fragments in the thermal-neutron induced fission of 235U. The gamma radiation emitted during different time intervals after the fission event was studied with the help of a collimator, the position of which was changed along the path of the fragments. In this way decay curves were obtained from which half-lives could be estimated. Time components with half-lives of 7.5, 18 and 60 ps were found and their relative intensities were calculated. Half-lives and associated intensities are in good agreement with earlier data from uranium and californium fission. Problems involved in this type of study are discussed. The collimator technique has proved to be effective for determination of half lives down to less than 10 ps

  4. Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

    International Nuclear Information System (INIS)

    Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

    2008-01-01

    White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

  5. Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

    Science.gov (United States)

    Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

    2015-05-01

    Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light. Copyright © 2014 John Wiley & Sons, Ltd.

  6. Numerically stable algorithm for discrete-ordinate-method radiative transfer in multiple scattering and emitting layered media

    Science.gov (United States)

    Stamnes, Knut; Tsay, S.-CHEE; Jayaweera, Kolf; Wiscombe, Warren

    1988-01-01

    The transfer of monochromatic radiation in a scattering, absorbing, and emitting plane-parallel medium with a specified bidirectional reflectivity at the lower boundary is considered. The equations and boundary conditions are summarized. The numerical implementation of the theory is discussed with attention given to the reliable and efficient computation of eigenvalues and eigenvectors. Ways of avoiding fatal overflows and ill-conditioning in the matrix inversion needed to determine the integration constants are also presented.

  7. Control device intended for a gamma radiation measuring instrument

    International Nuclear Information System (INIS)

    1976-01-01

    This invention concerns a monitoring device for a gamma radiation measuring instrument or radiation meter, in which the radiation to be measured brings about, inter alia, the ionisation of a gas and the generation of current pulses. The dial of this meter is generally calibrated in roentgens per hour, i.e. in radiation rate units. This instrument of very simple design is remarkable for its operating reliability. Preferably placed at the inlet to a radioactive area, it enables every user of a ratemeter to check, over the entire measuring range of this instrument, its proper operation prior to entering the area. To this effect, the monitoring device in question has a thick wall lead castle, having an internal cavity in which is mounted a radioactive source delivering a gamma radiation with given constant characteristics, through a measurement window closed by a calibrated plug. Lead doors articulated on the castle can be superimposed on this window to bring about a given attenuation of the radiation coming from the source and delivered to the exterior of the castle [fr

  8. White light emitting device based on single-phase CdS quantum dots

    Science.gov (United States)

    Li, Feng; Nie, Chao; You, Lai; Jin, Xiao; Zhang, Qin; Qin, Yuancheng; Zhao, Feng; Song, Yinglin; Chen, Zhongping; Li, Qinghua

    2018-05-01

    White light emitting diodes (WLEDs) based on quantum dots (QDs) are emerging as robust candidates for white light sources, however they are suffering from the problem of energy loss resulting from the re-absorption and self-absorption among the employed QDs of different peak wavelengths. It still remains a challenging task to construct WLEDs based on single-phase QD emitters. Here, CdS QDs with short synthesis times are introduced to the fabrication of WLEDs. With a short synthesis time, on one hand, CdS QDs with a small diameter with blue emission can be obtained. On the other hand, surface reconstruction barely has time to occur, and the surface is likely defect-ridden, which enables the existence of a broad emission covering the range of green, yellow and red regions. This is essential for the white light emission of CdS QDs, and is very important for WLED applications. The temporal evolution of the PL spectra for CdS QDs was obtained to investigate the influence of growth time on the luminescent properties. The CdS QDs with a growth time of 0.5 min exhibited a colour rendering index (CRI) of 79.5 and a correlated colour temperature (CCT) of 6238 K. With increasing reaction time, the colour coordinates of the CdS QDs will move away from the white light region in the CIE 1931 chromaticity diagram. By integrating the as prepared white light emission CdS QDs with a violet GaN chip, WLEDs were fabricated. The fabricated WLEDs exhibited a CRI of 87.9 and a CCT of 4619 K, which satisfy the demand of general illumination. The luminous flux and the luminous efficiency of the fabricated WLEDs, being less advanced than current commercial white light sources, can be further improved, meaning there is a need for much more in-depth studies on white light emission CdS QDs.

  9. Signal Processing Device (SPD) for networked radiation monitoring system

    International Nuclear Information System (INIS)

    Dharmapurikar, A.; Bhattacharya, S.; Mukhopadhyay, P.K.; Sawhney, A.; Patil, R.K.

    2010-01-01

    A networked radiation and parameter monitoring system with three tier architecture is being developed. Signal Processing Device (SPD) is a second level sub-system node in the network. SPD is an embedded system which has multiple input channels and output communication interfaces. It acquires and processes data from first level parametric sensor devices, and sends to third level devices in response to request commands received from host. It also performs scheduled diagnostic operations and passes on the information to host. It supports inputs in the form of differential digital signals and analog voltage signals. SPD communicates with higher level devices over RS232/RS422/USB channels. The system has been designed with main requirements of minimal power consumption and harsh environment in radioactive plants. This paper discusses the hardware and software design details of SPD. (author)

  10. Evaluation of scattered radiation emitted from X-ray security scanners on occupational dose to airport personnel

    International Nuclear Information System (INIS)

    Dalah, Entesar; Fakhry, Angham; Mukhtar, Asma; Al Salti, Farah; Bader, May; Khouri, Sara; Al-Zahmi, Reem

    2017-01-01

    Based on security issues and regulations airports are provided with luggage cargo scanners. These scanners utilize ionizing radiation that in principle present health risks toward humans. The study aims to investigate the amount of backscatter produced by passenger luggage and cargo toward airport personnel who are located at different distances from the scanners. To approach our investigation a Thermo Electron Radeye-G probe was used to quantify the backscattered radiation measured in terms of dose-rate emitted from airport scanners, Measurements were taken at the entrance and exit positions of the X-ray tunnel at three different distances (0, 50, and 100 cm) for two different scanners; both scanners include shielding curtains that reduce scattered radiation. Correlation was demonstrated using the Pearson coefficient test. Measurements confirmed an inverse relationship between dose rate and distance. An estimated occupational accumulative dose of 0.88 mSv/y, and 2.04 mSv/y were obtained for personnel working in inspection of carry-on, and cargo, respectively. Findings confirm that the projected dose of security and engineering staff are being well within dose limits. - Highlights: • Backscattered radiation emitted from the airport security scanners is estimated. • Inverse relation observed between backscattered radiation and scanners distance. • Occupational dose for personnel inspecting the scanners were up to 2.04 mSv/y. • The projected dose of security and engineering staff are well within dose limits.

  11. Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

    Science.gov (United States)

    Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

    2007-03-01

    The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

  12. Assessment of radiation emitted by the colour video monitors using a silicon surface-barrier detection system

    International Nuclear Information System (INIS)

    Tykva, R.; Sabol, J.

    1998-01-01

    About 5% of the commonly used colour monitors tested showed radiation levels on the screen surface approaching the dose rate of 5 μGy/h. There is practically no difference between 'low radiation' monitors and other monitors. The level of radiation emitted to the sides is generally higher than that of X-ray photons emerging from the surface of the screen. Although the contribution to the effective dose of a person exposed to radiation from the monitors may be below the limit set for the general public, the skin and eye lens dose may reach significant levels, taking into account some factors such as a high density of monitors in small rooms, short distance, long exposure time, etc. (M.D.)

  13. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    International Nuclear Information System (INIS)

    Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

    2010-01-01

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  14. Organic light-emitting devices (OLEDs) and OLED-based chemical and biological sensors: an overview

    Energy Technology Data Exchange (ETDEWEB)

    Shinar, Joseph [Ames Laboratory-USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011 (United States); Shinar, Ruth [Microelectronics Research Center, Iowa State University, Ames, IA 50011 (United States)

    2008-07-07

    The basic photophysics, transport properties, state of the art, and challenges in OLED science and technology, and the major developments in structurally integrated OLED-based luminescent chemical and biological sensors are reviewed briefly. The dramatic advances in OLED performance have resulted in devices with projected continuous operating lifetimes of {approx}2 x 10{sup 5} h ({approx}23 yr) at {approx}150 Cd m{sup -2} (the typical brightness of a computer monitor or TV). Consequently, commercial products incorporating OLEDs, e.g., cell phones, MP3 players, and, most recently, OLED TVs, are rapidly proliferating. The progress in elucidating the photophysics and transport properties, occurring in tandem with the development of OLEDs, has been no less dramatic. It has resulted in a detailed understanding of the dynamics of trapped and mobile negative and positive polarons (to which the electrons and holes, respectively, relax upon injection), and of singlet and triplet excitons. It has also yielded a detailed understanding of the spin dynamics of polarons and triplet excitons, which affects their overall dynamics significantly. Despite the aforementioned progress, there are outstanding challenges in OLED science and technology, notably in improving the efficiency of the devices and their stability at high brightness (>1000 Cd m{sup -2}). One of the most recent emerging OLED-based technologies is that of structurally integrated photoluminescence-based chemical and biological sensors. This sensor platform, pioneered by the authors, yields uniquely simple and potentially very low-cost sensor (micro)arrays. The second part of this review describes the recent developments in implementing this platform for gas phase oxygen, dissolved oxygen (DO), anthrax lethal factor, and hydrazine sensors, and for a DO, glucose, lactate, and ethanol multianalyte sensor. (topical review)

  15. Organic light-emitting devices (OLEDs) and OLED-based chemical and biological sensors: an overview

    International Nuclear Information System (INIS)

    Shinar, Joseph; Shinar, Ruth

    2008-01-01

    The basic photophysics, transport properties, state of the art, and challenges in OLED science and technology, and the major developments in structurally integrated OLED-based luminescent chemical and biological sensors are reviewed briefly. The dramatic advances in OLED performance have resulted in devices with projected continuous operating lifetimes of ∼2 x 10 5 h (∼23 yr) at ∼150 Cd m -2 (the typical brightness of a computer monitor or TV). Consequently, commercial products incorporating OLEDs, e.g., cell phones, MP3 players, and, most recently, OLED TVs, are rapidly proliferating. The progress in elucidating the photophysics and transport properties, occurring in tandem with the development of OLEDs, has been no less dramatic. It has resulted in a detailed understanding of the dynamics of trapped and mobile negative and positive polarons (to which the electrons and holes, respectively, relax upon injection), and of singlet and triplet excitons. It has also yielded a detailed understanding of the spin dynamics of polarons and triplet excitons, which affects their overall dynamics significantly. Despite the aforementioned progress, there are outstanding challenges in OLED science and technology, notably in improving the efficiency of the devices and their stability at high brightness (>1000 Cd m -2 ). One of the most recent emerging OLED-based technologies is that of structurally integrated photoluminescence-based chemical and biological sensors. This sensor platform, pioneered by the authors, yields uniquely simple and potentially very low-cost sensor (micro)arrays. The second part of this review describes the recent developments in implementing this platform for gas phase oxygen, dissolved oxygen (DO), anthrax lethal factor, and hydrazine sensors, and for a DO, glucose, lactate, and ethanol multianalyte sensor. (topical review)

  16. The influence of charge injection from intermediate connectors on the performance of tandem organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Dong-Ying [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China); Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Siboni, Hossein Zamani; Wang, Qi; Aziz, Hany, E-mail: lsliao@suda.edu.cn, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Liao, Liang-Sheng, E-mail: lsliao@suda.edu.cn, E-mail: h2aziz@uwaterloo.ca [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-12-14

    Charge generation in a typical intermediate connector, composed of “n-type doped layer/transition metal oxide (TMO)/hole transporting layer (HTL),” of a tandem organic light-emitting device (OLED) has recently been found to arise from charge transfer at the TMO/HTL interfaces. In this paper, we investigate the effect of hole injection barriers from intermediate connectors on the performance of tandem OLEDs. The hole injection barriers are caused by the offset of the highest occupied molecular orbital (HOMO) energy levels between HTLs contained in the intermediate connector and the top electroluminescence (EL) unit. We also find that although charge generation can occur at the interfaces between the TMO and a wide variety of HTLs of different HOMO values, an increase in the hole injection barrier however limits the electroluminescence efficiency of the top EL units. In the case of large hole injection barriers, significant charge accumulation in the HTLs makes the intermediate connector lose its functionality gradually over operating time, and limits device stability.

  17. A Rat Model of Thrombosis in Common Carotid Artery Induced by Implantable Wireless Light-Emitting Diode Device

    Directory of Open Access Journals (Sweden)

    Jih-Chao Yeh

    2014-01-01

    Full Text Available This work has developed a novel approach to form common carotid artery (CCA thrombus in rats with a wireless implantable light-emitting diode (LED device. The device mainly consists of an external controller and an internal LED assembly. The controller was responsible for wirelessly transmitting electrical power. The internal LED assembly served as an implant to receive the power and irradiate light on CCA. The thrombus formation was identified with animal sonography, 7T magnetic resonance imaging, and histopathologic examination. The present study showed that a LED assembly implanted on the outer surface of CCA could induce acute occlusion with single irradiation with 6 mW/cm2 LED for 4 h. If intermittent irradiation with 4.3–4.5 mW/cm2 LED for 2 h was shut off for 30 min, then irradiation for another 2 h was applied; the thrombus was observed to grow gradually and was totally occluded at 7 days. Compared with the contralateral CCA without LED irradiation, the arterial endothelium in the LED-irradiated artery was discontinued. Our study has shown that, by adjusting the duration of irradiation and the power intensity of LED, it is possible to produce acute occlusion and progressive thrombosis, which can be used as an animal model for antithrombotic drug development.

  18. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    Science.gov (United States)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  19. Apparatus for minimizing radiation exposure and improving resolution in radiation imaging devices

    International Nuclear Information System (INIS)

    Ashe, J.B.; Williams, G.H.; Sypal, K.L.

    1978-01-01

    A collimator is disclosed for minimizing radiation exposure and improving resolution in radiation imaging devices. The collimator provides a penetrating beam of radiation from a source thereof, which beam is substantially non-diverging in at least one direction. In the preferred embodiment, the collimator comprises an elongated sandwich assembly of a plurality of layers of material exhibiting relatively high radiation attenuation characteristics, which attenuating layers are spaced apart and separated from one another by interleaved layers of material exhibiting relatively low radiation attenuation characteristics. The sandwich assembly is adapted for lengthwise disposition and orientation between a radiation source and a target or receiver such that the attenuating layers are parallel to the desired direction of the beam with the interleaved spacing layers providing direct paths for the radiation

  20. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

    International Nuclear Information System (INIS)

    Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

    2013-01-01

    Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

  1. Energy harvesting devices for harvesting energy from terahertz electromagnetic radiation

    Science.gov (United States)

    Novack, Steven D.; Kotter, Dale K.; Pinhero, Patrick J.

    2012-10-09

    Methods, devices and systems for harvesting energy from electromagnetic radiation are provided including harvesting energy from electromagnetic radiation. In one embodiment, a device includes a substrate and one or more resonance elements disposed in or on the substrate. The resonance elements are configured to have a resonant frequency, for example, in at least one of the infrared, near-infrared and visible light spectra. A layer of conductive material may be disposed over a portion of the substrate to form a ground plane. An optical resonance gap or stand-off layer may be formed between the resonance elements and the ground plane. The optical resonance gap extends a distance between the resonance elements and the layer of conductive material approximately one-quarter wavelength of a wavelength of the at least one resonance element's resonant frequency. At least one energy transfer element may be associated with the at least one resonance element.

  2. Dosimetric studies for gamma radiation validation of medical devices

    International Nuclear Information System (INIS)

    Soliman, Y.S.; Beshir, W.B.; Abdel-Fattah, A.A.; Abdel-Rehim, F.

    2013-01-01

    The delivery and validation of a specified dose to medical devices are key concerns to operators of gamma radiation facilities. The objective of the present study was to characterize the industrial gamma radiation facility and map the dose distribution inside the product-loading pattern during the validation and routine control of the sterilization process using radiochromic films. Cardboard phantoms were designed to achieve the homogeneity of absorbed doses. The uncertainty of the dose delivered during validation of the sterilization process was assessed. - Highlights: ► Using γ-rays for sterilization of hollow fiber dialyzers and blood tubing sets according to ISO 11137, 2006. ► Dosimetry studies of validations of γ-irradiation facility and sterilized medical devices. ► Places of D min and D max have been determined using FWT-60 films. ► Determining the target minimum doses required to meet the desired SAL of 10 −6 for the two products.

  3. The radiation protective devices for interventional procedures using computed tomography

    International Nuclear Information System (INIS)

    Iida, Hiroji; Chabatake, Mitsuhiro; Shimizu, Mitsuru; Tamura, Sakio

    2002-01-01

    A scattered dose and a surface dose from phantom measurements during interventional procedures with computed tomography (IVR-CT) were evaluated. To reduce the personnel exposure in IVR-CT, the new protective devices were developed and its effect evaluated. Two radiation protection devices were experimentally made using a lead vinyl sheet with lead equivalent 0.125 mmPb. The first device is a lead curtain which shields the space of CT-gantry and phantom for the CT examination. The second device is a lead drape which shields on the phantom surface adjacent to the scanning plane for the CT-fluoroscopy. Scattered dose and phantom surface dose were measured with an abdominal phantom during Cine-CT (130 kV, 150 mA, 5 seconds, 10 mm section thickness). They were measured by using ionization chamber dosimeter. They were measured with and without a lead curtain and a lead drape. Scattered dose rate was measured at distance of 50-150 cm from the scanning plane. And, surface dose was measured at distance of 4-21 cm from the scanning plane on the phantom. On operator's standing position, scattered dose rates were from 8.4 to 11.6 μGy/sec at CT examination. The lead curtain and the lead drape reduced scattered dose rate at distance of 50 cm from the scanning plane by 66% and 58.3% respectively. Surface dose rate were 118 μGy/sec at distance of 5 cm from the scanning plane at CT-fluoroscopy. The lead drape reduced the surface dose by 60.5%. High scattered exposure to personnel may occur during interventional procedures using CT. They were considerably reduced during CT-arteriography by attaching the lead curtain in CT equipment. And they were substantially reduced during CT-fluoroscopy by placing the lead drape adjacent to the scanning plane, in addition, operator's hand would be protected from unnecessary radiation scattered by phantom. It was suggested that the scattered exposure to personnel could be sufficiently reduced by using radiation protection devices in IVR-CT. The

  4. Hybrid active layers from a conjugated polymer and inorganic nanoparticles for organic light emitting devices with emission colour tuned by electric field

    Energy Technology Data Exchange (ETDEWEB)

    Aleshin, Andrey N; Alexandrova, Elena L; Shcherbakov, Igor P [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26, Polytechnicheskaya Str., St Petersburg 194021 (Russian Federation)], E-mail: aleshin@transport.ioffe.ru

    2009-05-21

    We report on the investigation of the electrical and optical properties of hybrid active layers for organic devices consisting of a conjugated polymer MEH-PPV mixed with ZnO and Si nanoparticles. The effect of an electric field on the photoluminescence (PL) from a MEH-PPV : ZnO composite film is studied. We have found that in the absence of an electric field PL emission from the MEH-PPV : ZnO composites have two main maxima in the blue-red regions. Three additional minor PL maxima attributed to the exciplex states were found at {approx}420-480 nm. Application of a voltage bias to planar electrodes significantly suppresses the blue emission. Generation of excited states in the MEH-PPV : ZnO structures implies the presence of several radiative recombination mechanisms with the formation of polymer-nanoparticle complexes including exciplex states and charge transfer between the polymer and nanoparticles that can be controlled by an electric field. This effect provides the possibility to tune by an electric field the emission colour of organic light emitting diodes by combining an efficient emission from both organic/inorganic materials involved.

  5. Hybrid active layers from a conjugated polymer and inorganic nanoparticles for organic light emitting devices with emission colour tuned by electric field

    International Nuclear Information System (INIS)

    Aleshin, Andrey N; Alexandrova, Elena L; Shcherbakov, Igor P

    2009-01-01

    We report on the investigation of the electrical and optical properties of hybrid active layers for organic devices consisting of a conjugated polymer MEH-PPV mixed with ZnO and Si nanoparticles. The effect of an electric field on the photoluminescence (PL) from a MEH-PPV : ZnO composite film is studied. We have found that in the absence of an electric field PL emission from the MEH-PPV : ZnO composites have two main maxima in the blue-red regions. Three additional minor PL maxima attributed to the exciplex states were found at ∼420-480 nm. Application of a voltage bias to planar electrodes significantly suppresses the blue emission. Generation of excited states in the MEH-PPV : ZnO structures implies the presence of several radiative recombination mechanisms with the formation of polymer-nanoparticle complexes including exciplex states and charge transfer between the polymer and nanoparticles that can be controlled by an electric field. This effect provides the possibility to tune by an electric field the emission colour of organic light emitting diodes by combining an efficient emission from both organic/inorganic materials involved.

  6. Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

    Science.gov (United States)

    Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

    2012-08-01

    Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

  7. Combined Natural Convection and Radiation Heat Transfer of Various Absorbing-Emitting-Scattering Media in a Square Cavity

    Directory of Open Access Journals (Sweden)

    Xianglong Liu

    2014-01-01

    Full Text Available A numerical model is developed to simulate combined natural convection and radiation heat transfer of various anisotropic absorbing-emitting-scattering media in a 2D square cavity based on the discrete ordinate (DO method and Boussinesq assumption. The effects of Rayleigh number, optical thickness, scattering ratio, scattering phase function, and aspect ratio of square cavity on the behaviors of heat transfer are studied. The results show that the heat transfer of absorbing-emitting-scattering media is the combined results of radiation and natural convection, which depends on the physical properties and the aspect ratio of the cavity. When the natural convection becomes significant, the convection heat transfer is enhanced, and the distributions of NuR and Nuc along the walls are obviously distorted. As the optical thickness increases, NuR along the hot wall decreases. As the scattering ratio decreases, the NuR along the walls decreases. At the higher aspect ratio, the more intensive thermal radiation and natural convection are formed, which increase the radiation and convection heat fluxes. This paper provides the theoretical research for the optimal thermal design and practical operation of the high temperature industrial equipments.

  8. Effect of radiofrequency radiation from Wi-Fi devices on mercury release from amalgam restorations.

    Science.gov (United States)

    Paknahad, Maryam; Mortazavi, S M J; Shahidi, Shoaleh; Mortazavi, Ghazal; Haghani, Masoud

    2016-01-01

    Dental amalgam is composed of approximately 50% elemental mercury. Despite concerns over the toxicity of mercury, amalgam is still the most widely used restorative material. Wi-Fi is a rapidly using local area wireless computer networking technology. To the best of our knowledge, this is the first study that evaluates the effect of exposure to Wi-Fi signals on mercury release from amalgam restorations. Standard class V cavities were prepared on the buccal surfaces of 20 non-carious extracted human premolars. The teeth were randomly divided into 2 groups (n = 10). The control group was stored in non-environment. The specimens in the experimental groups were exposed to a radiofrequency radiation emitted from standard Wi Fi devices at 2.4 GHz for 20 min. The distance between the Wi-Fi router and samples was 30 cm and the router was exchanging data with a laptop computer that was placed 20 m away from the router. The concentration of mercury in the artificial saliva in the groups was evaluated by using a cold-vapor atomic absorption Mercury Analyzer System. The independent t test was used to evaluate any significant differences in mercury release between the two groups. The mean (±SD) concentration of mercury in the artificial saliva of the Wi-Fi exposed teeth samples was 0.056 ± .025 mg/L, while it was only 0.026 ± .008 mg/L in the non-exposed control samples. This difference was statistically significant (P =0.009). Exposure of patients with amalgam restorations to radiofrequency radiation emitted from conventional Wi-Fi devices can increase mercury release from amalgam restorations.

  9. Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

    Science.gov (United States)

    Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

    2015-11-25

    A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. X-ray Emitting GHz-Peaked Spectrum Galaxies: Testing a Dynamical-Radiative Model with Broad-Band Spectra

    International Nuclear Information System (INIS)

    Ostorero, L.; Moderski, R.; Stawarz, L.; Diaferio, A.; Kowalska, I.; Cheung, C.C.; Kataoka, J.; Begelman, M.C.; Wagner, S.J.

    2010-01-01

    In a dynamical-radiative model we recently developed to describe the physics of compact, GHz-Peaked-Spectrum (GPS) sources, the relativistic jets propagate across the inner, kpc-sized region of the host galaxy, while the electron population of the expanding lobes evolves and emits synchrotron and inverse-Compton (IC) radiation. Interstellar-medium gas clouds engulfed by the expanding lobes, and photoionized by the active nucleus, are responsible for the radio spectral turnover through free-free absorption (FFA) of the synchrotron photons. The model provides a description of the evolution of the GPS spectral energy distribution (SED) with the source expansion, predicting significant and complex high-energy emission, from the X-ray to the γ-ray frequency domain. Here, we test this model with the broad-band SEDs of a sample of eleven X-ray emitting GPS galaxies with Compact-Symmetric-Object (CSO) morphology, and show that: (i) the shape of the radio continuum at frequencies lower than the spectral turnover is indeed well accounted for by the FFA mechanism; (ii) the observed X-ray spectra can be interpreted as non-thermal radiation produced via IC scattering of the local radiation fields off the lobe particles, providing a viable alternative to the thermal, accretion-disk dominated scenario. We also show that the relation between the hydrogen column densities derived from the X-ray (N H ) and radio (N HI ) data of the sources is suggestive of a positive correlation, which, if confirmed by future observations, would provide further support to our scenario of high-energy emitting lobes.

  11. Determination of the exposure speed of radiation emitted by the linear accelerator, using the code MCNP5 to evaluate the radiotherapy room shields of ABC Hospital

    International Nuclear Information System (INIS)

    Corral B, J. R.

    2015-01-01

    Humans should avoid exposure to radiation, because the consequences are harmful to health. Although there are different emission sources of radiation, generated by medical devices they are usually of great interest, since people who attend hospitals are exposed in one way or another to ionizing radiation. Therefore, is important to conduct studies on radioactive levels that are generated in hospitals, as a result of the use of medical equipment. To determine levels of exposure speed of a radioactive facility there are different methods, including the radiation detector and computational method. This thesis uses the computational method. With the program MCNP5 was determined the speed of the radiation exposure in the radiotherapy room of Cancer Center of ABC Hospital in Mexico City. In the application of computational method, first the thicknesses of the shields were calculated, using variables as: 1) distance from the shield to the source; 2) desired weekly equivalent dose; 3) weekly total dose equivalent emitted by the equipment; 4) occupation and use factors. Once obtained thicknesses, we proceeded to model the bunker using the mentioned program. The program uses the Monte Carlo code to probabilistic ally determine the phenomena of interaction of radiation with the shield, which will be held during the X-ray emission from the linear accelerator. The results of computational analysis were compared with those obtained experimentally with the detection method, for which was required the use of a Geiger-Muller counter and the linear accelerator was programmed with an energy of 19 MV with 500 units monitor positioning the detector in the corresponding boundary. (Author)

  12. Radioactivity concentration measuring device for radiation waste containing vessel

    International Nuclear Information System (INIS)

    Goto, Tetsuo.

    1994-01-01

    The device of the present invention can precisely and accurately measure a radioactive concentration of radioactive wastes irrespective of the radioactivity concentration distribution. Namely, a Ge detector having a collimator and a plurality of radiation detectors are placed at the outside of the radioactive waste containing vessel in such a way that it can rotate and move vertically relative to the vessel. The plurality of radiation detectors detect radiation coefficient signals at an assumed segment unit of a predetermined length in vertical direction and for every predetermined angle unit in the rotational direction. A weight measuring device determines the weight of the vessel. A computer calculates an average density of radioactivity for the region filled with radioactivity based on the determined net weight and radiation coefficient signals assuming that the volume of the radioactivity is constant. In addition, the computer calculates the amount of radioactivity in the assumed segment by conducting γ -ray absorption compensation calculation for the material in the vessel. Each of the amount of radioactivity is integrated to determine the amount of radioactivity in the vessel. (I.S.)

  13. Radiation damage and rate limitations in tracking devices

    International Nuclear Information System (INIS)

    Gilchriese, M.G.D.

    1984-01-01

    In this note the author briefly discusses radiation damage to wire chambers and silicon strip devices and the electronics that may be associated with each of these. Scintillating fibers and CCD's are not discussed although the former appears to be a potentially radiation-resistant detector. In order to calculate radiation levels and rates the author assumed the following: an inelastic cross section of 100 mb at the SSC - six charged particles per unit of rapidity - photons and neutrons do not contribute to the background (photon conversions are negligible with a thin Be beam pipe) - beam gas interactions and beam losses (except during injection when I assume that the detector is ''off'') are negligible. This is discussed in a later section. - 1 Rad = 3.5 x 10 7 minimum ionizing particlescm 2

  14. Radiation effects in light emitting diodes, laser diodes, photodiodes and optocouplers

    International Nuclear Information System (INIS)

    Lischka, H.; Henschel, H.; Koehn, O.; Lennartz, W.; Schmidt, H.U.

    1994-01-01

    A variety of commercially available LEDs, LDs, PDs, and optocouplers from two German manufacturers were irradiated at a flash X-ray source, a 60 Co gamma ray source, and a 14 MeV neutron generator. Light output and emission spectrum of the LEDs and LDs were measured before and after irradiation at the 60 Co source. With the PDs we measured the dark current and the photo current before and after 60 Co irradiation. Determination of the sensitivity against neutrons was made off-line. With PDs we measured the photo current induced by pulsed X-rays. The GaAs LED showed a maximum decrease of output power of 28 dB after a total gamma dose of 10 6 Gy and LDs a threshold current shift of 80% after neutron fluences of 4 - 10 14 cm -2 (1 MeV). Irradiations of PDs and APDs with 60 Co gammas up to a total dose of 10 6 Gy as well as irradiations with neutrons up to fluences of ≤ 4 - 10 14 cm -2 (1 MeV) led to significant changes of the device parameters. The main effect was a strong increase of the dark current. The consequence was a reduction of the minimum detectable light power. Optocouplers are very sensitive to ionizing radiation. Gammas as well as neutrons led to a decrease of the CTR and a change of the bandwidth up to a complete failure (after neutron irradiation). (author). 9 refs., 11 figs., 4 tabs

  15. Hybrid white organic light-emitting devices based on phosphorescent iridium-benzotriazole orange-red and fluorescent blue emitters

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Zhen-Yuan, E-mail: xiazhenyuan@hotmail.com [Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Su, Jian-Hua [Key Laboratory for Advanced Materials and Institute of Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Chang, Chi-Sheng; Chen, Chin H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan 300 (China)

    2013-03-15

    We demonstrate that high color purity or efficiency hybrid white organic light-emitting devices (OLEDs) can be generated by integrating a phosphorescent orange-red emitter, bis[4-(2H-benzotriazol-2-yl)-N,N-diphenyl-aniline-N{sup 1},C{sup 3}] iridium acetylacetonate, Ir(TBT){sub 2}(acac) with fluorescent blue emitters in two different emissive layers. The device based on deep blue fluorescent material diphenyl-[4-(2-[1,1 Prime ;4 Prime ,1 Double-Prime ]terphenyl-4-yl-vinyl)-phenyl]-amine BpSAB and Ir(TBT){sub 2}(acac) shows pure white color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.30). When using sky-blue fluorescent dopant N,N Prime -(4,4 Prime -(1E,1 Prime E)-2,2 Prime -(1,4-phenylene)bis(ethene-2,1-diyl) bis(4,1-phenylene))bis(2-ethyl-6-methyl-N-phenylaniline) (BUBD-1) and orange-red phosphor with a color-tuning phosphorescent material fac-tris(2-phenylpyridine) iridium (Ir(ppy){sub 3} ), it exhibits peak luminance yield and power efficiency of 17.4 cd/A and 10.7 lm/W, respectively with yellow-white color and CIE color rendering index (CRI) value of 73. - Highlights: Black-Right-Pointing-Pointer An iridium-based orange-red phosphor Ir(TBT){sub 2}(acac) was applied in hybrid white OLEDs. Black-Right-Pointing-Pointer Duel- and tri-emitter WOLEDs were achieved with either high color purity or efficiency performance. Black-Right-Pointing-Pointer Peak luminance yield of tri-emitter WOLEDs was 17.4 cd/A with yellow-white color and color rendering index (CRI) value of 73.

  16. Postdischarge decontamination of MRSA, VRE, and Clostridium difficile isolation rooms using 2 commercially available automated ultraviolet-C-emitting devices.

    Science.gov (United States)

    Wong, Titus; Woznow, Tracey; Petrie, Mike; Murzello, Elena; Muniak, Allison; Kadora, Amin; Bryce, Elizabeth

    2016-04-01

    Two ultraviolet-C (UVC)-emitting devices were evaluated for effectiveness in reducing methicillin-resistant Staphylococcus aureus (MRSA), vancomycin-resistant enterococci (VRE), and Clostridium difficile (CD). Six surfaces in rooms previously occupied by patients with MRSA, VRE, or CD were cultured before and after cleaning and after UVC disinfection. In a parallel laboratory study, MRSA and VRE suspended in trypticase soy broth were inoculated onto stainless steel carriers in triplicate, placed in challenging room areas, subjected to UVC, and subcultured to detect growth. Sixty-one rooms and 360 surfaces were assessed. Before cleaning, MRSA was found in 34.4%, VRE was found in 29.5%, and CD was found in 31.8% of rooms. Cleaning reduced MRSA-, VRE-, and CD-contaminated rooms to 27.9%, 29.5%, and 22.7%, respectively (not statistically significant). UVC disinfection further reduced MRSA-, VRE-, and CD-contaminated rooms to 3.3% (P = .0003), 4.9% (P = .0003), and 0% (P = .0736), respectively. Surface colony counts (excluding floors) decreased from 88.0 to 19.6 colony forming units (CFU) (P < .0001) after manual cleaning; UVC disinfection further reduced it to 1.3 CFU (P = .0013). In a multivariable model of the carrier study, the odds of detecting growth in broth suspensions after UVC disinfection were 7 times higher with 1 machine (odds ratio, 6.96; 95% confidence interval, 3.79-13.4) for a given organism, surface, and concentration. UVC devices are effective adjuncts to manual cleaning but vary in their ability to disinfect high concentrations of organisms in the presence of protein. Copyright © 2016 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

  17. Hybrid white organic light-emitting devices based on phosphorescent iridium–benzotriazole orange–red and fluorescent blue emitters

    International Nuclear Information System (INIS)

    Xia, Zhen-Yuan; Su, Jian-Hua; Chang, Chi-Sheng; Chen, Chin H.

    2013-01-01

    We demonstrate that high color purity or efficiency hybrid white organic light-emitting devices (OLEDs) can be generated by integrating a phosphorescent orange–red emitter, bis[4-(2H-benzotriazol-2-yl)-N,N-diphenyl-aniline-N 1 ,C 3 ] iridium acetylacetonate, Ir(TBT) 2 (acac) with fluorescent blue emitters in two different emissive layers. The device based on deep blue fluorescent material diphenyl-[4-(2-[1,1′;4′,1″]terphenyl-4-yl-vinyl)-phenyl]-amine BpSAB and Ir(TBT) 2 (acac) shows pure white color with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.30). When using sky-blue fluorescent dopant N,N′-(4,4′-(1E,1′E)-2,2′-(1,4-phenylene)bis(ethene-2,1-diyl) bis(4,1-phenylene))bis(2-ethyl-6-methyl-N-phenylaniline) (BUBD-1) and orange–red phosphor with a color-tuning phosphorescent material fac-tris(2-phenylpyridine) iridium (Ir(ppy) 3 ), it exhibits peak luminance yield and power efficiency of 17.4 cd/A and 10.7 lm/W, respectively with yellow-white color and CIE color rendering index (CRI) value of 73. - Highlights: ► An iridium-based orange–red phosphor Ir(TBT) 2 (acac) was applied in hybrid white OLEDs. ► Duel- and tri-emitter WOLEDs were achieved with either high color purity or efficiency performance. ► Peak luminance yield of tri-emitter WOLEDs was 17.4 cd/A with yellow-white color and color rendering index (CRI) value of 73.

  18. High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

    Science.gov (United States)

    Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

    2018-04-01

    High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

  19. Finite volume method for radiative heat transfer in an unstructured flow solver for emitting, absorbing and scattering media

    International Nuclear Information System (INIS)

    Gazdallah, Moncef; Feldheim, Véronique; Claramunt, Kilian; Hirsch, Charles

    2012-01-01

    This paper presents the implementation of the finite volume method to solve the radiative transfer equation in a commercial code. The particularity of this work is that the method applied on unstructured hexahedral meshes does not need a pre-processing step establishing a particular marching order to visit all the control volumes. The solver simply visits the faces of the control volumes as numbered in the hexahedral unstructured mesh. A cell centred mesh and a spatial differencing step scheme to relate facial radiative intensities to nodal intensities is used. The developed computer code based on FVM has been integrated in the CFD solver FINE/Open from NUMECA Int. Radiative heat transfer can be evaluated within systems containing uniform, grey, emitting, absorbing and/or isotropically or linear anisotropically scattering medium bounded by diffuse grey walls. This code has been validated for three test cases. The first one is a three dimensional rectangular enclosure filled with emitting, absorbing and anisotropically scattering media. The second is the differentially heated cubic cavity. The third one is the L-shaped enclosure. For these three test cases a good agreement has been observed when temperature and heat fluxes predictions are compared with references taken, from literature.

  20. Structurally Integrated Photoluminescence-Based Lactate Sensor Using Organic Light Emitting Devices (OLEDs) as the Light Source

    International Nuclear Information System (INIS)

    Chengliang Qian

    2006-01-01

    Multianalyte bio(chemical) sensors are extensively researched for monitoring analytes in complex systems, such as blood serum. As a step towards developing such multianalyte sensors, we studied a novel, structurally integrated, organic light emitting device (OLED)-based sensing platform for detection of lactate. Lactate biosensors have attracted numerous research efforts, due to their wide applications in clinical diagnosis, athletic training and food industry. The OLED-based sensor is based on monitoring the oxidation reaction of lactate, which is catalyzed by the lactate oxidase (LOX) enzyme. The sensing component is based on an oxygen-sensitive dye, Platinum octaethyl porphyrin (PtOEP), whose photoluminescence (PL) lifetime τ decreases as the oxygen level increases. The PtOEP dye was embedded in a thin film polystyrene (PS) matrix; the LOX was dissolved in solution or immobilized in a sol-gel matrix. τ was measured as a function of the lactate concentration; as the lactate concentration increases, τ increases due to increased oxygen consumption. The sensors performance is discussed in terms of the detection sensitivity, dynamic range, and response time. A response time of ∼32 sec was achieved when the LOX was dissolved in solution and kept in a closed cell. Steps towards development of a multianalyte sensor array using an array of individually addressable OLED pixels were also presented

  1. Structurally Integrated Photoluminescence-Based Lactate Sensor Using Organic Light Emitting Devices (OLEDs) as the Light Source

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Chengliang [Iowa State Univ., Ames, IA (United States)

    2006-01-01

    Multianalyte bio(chemical) sensors are extensively researched for monitoring analytes in complex systems, such as blood serum. As a step towards developing such multianalyte sensors, we studied a novel, structurally integrated, organic light emitting device (OLED)-based sensing platform for detection of lactate. Lactate biosensors have attracted numerous research efforts, due to their wide applications in clinical diagnosis, athletic training and food industry. The OLED-based sensor is based on monitoring the oxidation reaction of lactate, which is catalyzed by the lactate oxidase (LOX) enzyme. The sensing component is based on an oxygen-sensitive dye, Platinum octaethyl porphyrin (PtOEP), whose photoluminescence (PL) lifetime τ decreases as the oxygen level increases. The PtOEP dye was embedded in a thin film polystyrene (PS) matrix; the LOX was dissolved in solution or immobilized in a sol-gel matrix. τ was measured as a function of the lactate concentration; as the lactate concentration increases, τ increases due to increased oxygen consumption. The sensors performance is discussed in terms of the detection sensitivity, dynamic range, and response time. A response time of ~32 sec was achieved when the LOX was dissolved in solution and kept in a closed cell. Steps towards development of a multianalyte sensor array using an array of individually addressable OLED pixels were also presented.

  2. Modularized and water-cooled photo-catalyst cleaning devices for aquaponics based on ultraviolet light-emitting diodes

    Science.gov (United States)

    Yang, Henglong; Lung, Louis; Wei, Yu-Chien; Huang, Yi-Bo; Chen, Zi-Yu; Chou, Yu-Yang; Lin, Anne-Chin

    2017-08-01

    The feasibility of applying ultraviolet light-emitting diodes (UV-LED's) as triggering sources of photo-catalyst based on titanium dioxide (TiO2) nano-coating specifically for water-cleaning process in an aquaponics system was designed and proposed. The aquaponics system is a modern farming system to integrate aquaculture and hydroponics into a single system to establish an environmental-friendly and lower-cost method for farming fish and vegetable all together in urban area. Water treatment in an aquaponics system is crucial to avoid mutual contamination. we proposed a modularized watercleaning device composed of all commercially available components and parts to eliminate organic contaminants by using UV-LED's for TiO2 photo-catalyst reaction. This water-cleaning module consisted of two coaxial hollowed cylindrical pipes can be submerged completely in water for water treatment and cooling UV-LED's. The temperature of the UV-LED after proper thermal management can be reduced about 16% to maintain the optimal operation condition. Our preliminary experimental result by using Methylene Blue solution to simulate organic contaminants indicated that TiO2 photo-catalyst triggered by UV-LED's can effectively decompose organic compound and decolor Methylene Blue solution.

  3. Electroluminescence Properties of IrQ(ppy)2 Dual-Emitter Organometallic Compound in Organic Light-Emitting Devices

    Science.gov (United States)

    Ciobotaru, Constantin Claudiu; Polosan, Silviu; Ciobotaru, Iulia Corina

    2018-02-01

    This paper reports the influence of the charge carrier mobility on the electroluminescent properties of a dual-emitter organometallic compound dispersed in two conjugated organic small-molecule host materials and embedded in organic light-emitting devices (OLEDs). The electroluminescent processes in OLEDs are strongly influenced by the host-guest interaction. The charge carrier mobility in the host material plays an important role in the electroluminescent processes but also depends on the triplet-triplet interaction with the organometallic compound. The low charge carrier mobility in 4,4'-bis( N-carbazolyl)-1,1'-biphenyl (CBP) host material reduces the electroluminescent processes, but they are slightly enhanced by the triplet-triplet exothermic charge transfer. The higher charge carrier mobility in the case of N, N'-bis(3-methylphenyl)- N, N'-diphenylbenzidine (TPD) host material influences the electroluminescent processes by the endothermic energy transfer at room temperature, which facilitates the triplet-triplet harvesting in the host-guest system. The excitation is transferred to the guest molecules by triplet-triplet interaction as a Dexter transfer, which occurs by endothermic transfer from the triplet exciton in the host to the triplet exciton in the guest.

  4. 78 FR 19711 - Center for Devices and Radiological Health: Experiential Learning Program

    Science.gov (United States)

    2013-04-02

    ... timely and continued access to safe, effective, high-quality medical devices and safe radiation-emitting...-acoustic stimulation using hybrid cochlear implants, preservation of residual hearing, postoperative...

  5. Problematic radiation protective devices for X-ray diagnostics

    International Nuclear Information System (INIS)

    Beck, A.; Nanko, N.; Bruggmoser, G.; Eble, M.

    1988-01-01

    The authors report experimental test results of radiation safety glasses with a lead equivalence of 0.5 mm Pb. The glasses were tested on a phantom, with various radiation projections, for their shielding effect with regard to the eye lens. The protective effect at AP projection was 90%, which corresponds to the data given by the manufacturer. But in most cases of interventional radiology, the examiner's eyes are exposed to lateral radiation, due to the positioning of the monitor. In these cases, reflected radiation at the side of the glasses facing the eye may induce a dose to the lens that can be fourfold the dose received without wearing the glasses, so that wearing these glasses may enhance the hazard. Another protective device tested was lead-coated gloves. The manufacturer promises a protective effect of 50% at 100 kV. The experimental test data, obtained by taking into account technical characteristics of angiographic components, confirm a radiation shielding of about 20%. (orig./HP) [de

  6. Volatiles emitted from flowers of gamma-radiated and nonradiated Jasminum polyanthum Franch

    DEFF Research Database (Denmark)

    Christensen, Lars P; Jakobsen, Henrik B; Kristiansen, Kell

    1997-01-01

    Volatile compounds emitted from flowers of Jasminum polyanthum Pepita in situ were collected by dynamic headspace technique and analyzed by GC-FID and GC-MS. A total of 32 compounds were identified. The flower scent was dominated by benzyl acetate (57.8%), p-cresol (12.2%), (E)-isoeugenol (9.7%),...

  7. Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

    International Nuclear Information System (INIS)

    Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

    2011-01-01

    Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

  8. Development of Quantum Devices and Algorithms for Radiation Detection and Radiation Signal Processing

    International Nuclear Information System (INIS)

    El Tokhy, M.E.S.M.E.S.

    2012-01-01

    The main functions of spectroscopy system are signal detection, filtering and amplification, pileup detection and recovery, dead time correction, amplitude analysis and energy spectrum analysis. Safeguards isotopic measurements require the best spectrometer systems with excellent resolution, stability, efficiency and throughput. However, the resolution and throughput, which depend mainly on the detector, amplifier and the analog-to-digital converter (ADC), can still be improved. These modules have been in continuous development and improvement. For this reason we are interested with both the development of quantum detectors and efficient algorithms of the digital processing measurement. Therefore, the main objective of this thesis is concentrated on both 1. Study quantum dot (QD) devices behaviors under gamma radiation 2. Development of efficient algorithms for handling problems of gamma-ray spectroscopy For gamma radiation detection, a detailed study of nanotechnology QD sources and infrared photodetectors (QDIP) for gamma radiation detection is introduced. There are two different types of quantum scintillator detectors, which dominate the area of ionizing radiation measurements. These detectors are QD scintillator detectors and QDIP scintillator detectors. By comparison with traditional systems, quantum systems have less mass, require less volume, and consume less power. These factors are increasing the need for efficient detector for gamma-ray applications such as gamma-ray spectroscopy. Consequently, the nanocomposite materials based on semiconductor quantum dots has potential for radiation detection via scintillation was demonstrated in the literature. Therefore, this thesis presents a theoretical analysis for the characteristics of QD sources and infrared photodetectors (QDIPs). A model of QD sources under incident gamma radiation detection is developed. A novel methodology is introduced to characterize the effect of gamma radiation on QD devices. The rate

  9. Radiation Characterization of Commercial GaN Devices

    Science.gov (United States)

    Harris, Richard D.; Scheick, Leif Z.; Hoffman, James P.; Thrivikraman, Tushar; Jenabi, Masud; Gim, Yonggyu; Miyahira, Tetsuo

    2011-01-01

    Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

  10. Electromagnetic Radiation Efficiency of Body-Implanted Devices

    Science.gov (United States)

    Nikolayev, Denys; Zhadobov, Maxim; Karban, Pavel; Sauleau, Ronan

    2018-02-01

    Autonomous wireless body-implanted devices for biotelemetry, telemedicine, and neural interfacing constitute an emerging technology providing powerful capabilities for medicine and clinical research. We study the through-tissue electromagnetic propagation mechanisms, derive the optimal frequency range, and obtain the maximum achievable efficiency for radiative energy transfer from inside a body to free space. We analyze how polarization affects the efficiency by exciting TM and TE modes using a magnetic dipole and a magnetic current source, respectively. Four problem formulations are considered with increasing complexity and realism of anatomy. The results indicate that the optimal operating frequency f for deep implantation (with a depth d ≳3 cm ) lies in the (108- 109 )-Hz range and can be approximated as f =2.2 ×107/d . For a subcutaneous case (d ≲3 cm ), the surface-wave-induced interference is significant: within the range of peak radiation efficiency (about 2 ×108 to 3 ×109 Hz ), the max-to-min ratio can reach a value of 6.5. For the studied frequency range, 80%-99% of radiation efficiency is lost due to the tissue-air wave-impedance mismatch. Parallel polarization reduces the losses by a few percent; this effect is inversely proportional to the frequency and depth. Considering the implantation depth, the operating frequency, the polarization, and the directivity, we show that about an order-of-magnitude efficiency improvement is achievable compared to existing devices.

  11. Efficient and color-saturated inverted bottom-emitting organic light-emitting devices with a semi-transparent metal-assisted electron injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Meng-Huan, E-mail: kinneas.ac94g@nctu.edu.t [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Wu, Chang-Yen [Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chen, Teng-Ming [Department of Applied Chemistry, National Chiao Tung University, 210 R, CPT Building, 1001 Ta Hsueh Road, Hsinchu 300, Taiwan (China); Chen, Chin H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2011-01-15

    We report the development of highly efficient and color-saturated green fluorescent 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-benzo[l]pyrano-[6,7,8-ij]quinolizin-11-one dye-doped inverted bottom-emitting organic light-emitting diode (IBOLED). This was enabled by the insertion of a silver (Ag) based semi-transparent metal-assisted electron injection layer between the ITO cathode and n-doped electron transporting layer. This IBOLED with ITO/Ag bilayer cathode with its synergistic microcavity effect achieved luminous efficiencies of 20.7 cd/A and 12.4 lm/W and a saturated CIE{sub x,y} of (0.22, 0.72) at 20 mA/cm{sup 2}, which are twice better than those of the conventional OLED and have over 60% improvement on IBOLED without ITO/Ag bilayer cathode.

  12. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coiec, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' x-rays and 60 Co gamma rays

  13. A study of radiation vulnerability of ferroelectric material and devices

    Energy Technology Data Exchange (ETDEWEB)

    Coic, Y M; Musseau, O; Leray, J L [CEA Centre d` Etudes de Bruyeres-le-Chatel, 91 (France)

    1994-12-31

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ``10 keV Aracor`` s-rays and {sup 60}Co gamma rays. (author). 24 refs., 11 figs., 7 tabs.

  14. A study of radiation vulnerability of ferroelectric material and devices

    International Nuclear Information System (INIS)

    Coic, Y.M.; Musseau, O.; Leray, J.L.

    1994-01-01

    The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad (Si) and rad (PZT) is discussed in the case of low energy ''10 keV Aracor'' s-rays and 60 Co gamma rays. (author). 24 refs., 11 figs., 7 tabs

  15. Research on dose setting for radiation sterilization of medical device

    International Nuclear Information System (INIS)

    Zhang Tongcheng; Liu Qingfang; Zhong Hongliang; Mi Zhisu; Wang Chunlei; Jiang Jianping

    2002-01-01

    Objective: To establish the radiation sterilization dose for medical devices using data of bioburden on the medical device. Methods: Firstly determination of recovery ratio and correction coefficient of the microbiological test method was used according to ISO11737 standard, then determination of bioburden on the products, finally the dose setting was completed based on the Method 1 in ISO11137 standard. Results: Fifteen kinds of medical devices were tested. Bioburden range was from 8.6-97271.2 CFU/device, recovery ration range 54.6%-100%, correction co-efficiency range 1.00-1.83, D 10 distribution from 1.40 to 2.82 kGy, verification dose (dose at SAL = 10 -2 ) range 5.1-17.6 kGy and sterilization dose (dose at SAL 10 -6 ) range 17.5-32.5 kGy. Conclusion: One hundred samples of each kind of product were exposed to the pre-determined verification dose and then the sterility test was performed. Each sterility test showed positive number was not greater than two. This indicated that the sterilization dose established for each kind of product was statistically acceptable

  16. Electromagnetic radiation screening of semiconductor devices for long life applications

    Science.gov (United States)

    Hall, T. C.; Brammer, W. G.

    1972-01-01

    A review is presented of the mechanism of interaction of electromagnetic radiation in various spectral ranges, with various semiconductor device defects. Previous work conducted in this area was analyzed as to its pertinence to the current problem. The task was studied of implementing electromagnetic screening methods in the wavelength region determined to be most effective. Both scanning and flooding type stimulation techniques are discussed. While the scanning technique offers a considerably higher yield of useful information, a preliminary investigation utilizing the flooding approach is first recommended because of the ease of implementation, lower cost and ability to provide go-no-go information in semiconductor screening.

  17. Theoretic simulation for CMOS device on total dose radiation response

    International Nuclear Information System (INIS)

    He Baoping; Zhou Heqin; Guo Hongxia; He Chaohui; Zhou Hui; Luo Yinhong; Zhang Fengqi

    2006-01-01

    Total dose effect is simulated for C4007B, CC4007RH and CC4011 devices at different absorbed dose rate by using linear system theory. When irradiation response and dose are linear, total dose radiation and post-irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory. The simulating results agree with the experimental results at different absorbed dose rate. (authors)

  18. Risks of carcinogenesis from electromagnetic radiation of mobile telephony devices.

    Science.gov (United States)

    Yakymenko, I; Sidorik, E

    2010-07-01

    Intensive implementation of mobile telephony technology in everyday human life during last two decades has given a possibility for epidemiological estimation of long-term effects of chronic exposure of human organism to low-intensive microwave (MW) radiation. Latest epidemiological data reveal a significant increase in risk of development of some types of tumors in chronic (over 10 years) users of mobile phone. It was detected a significant increase in incidence of brain tumors (glioma, acoustic neuroma, meningioma), parotid gland tumor, seminoma in long-term users of mobile phone, especially in cases of ipsilateral use (case-control odds ratios from 1.3 up to 6.1). Two epidemiological studies have indicated a significant increase of cancer incidence in people living close to the mobile telephony base station as compared with the population from distant area. These data raise a question of adequacy of modern safety limits of electromagnetic radiation (EMR) exposure for humans. For today the limits were based solely on the conception of thermal mechanism of biological effects of RF/MW radiation. Meantime the latest experimental data indicate the significant metabolic changes in living cell under the low-intensive (non-thermal) EMR exposure. Among reproducible biological effects of low-intensive MWs are reactive oxygen species overproduction, heat shock proteins expression, DNA damages, apoptosis. The lack of generally accepted mechanism of biological effects of low-intensive non-ionizing radiation doesn't permit to disregard the obvious epidemiological and experimental data of its biological activity. Practical steps must be done for reasonable limitation of excessive EMR exposure, along with the implementation of new safety limits of mobile telephony devices radiation, and new technological decisions, which would take out the source of radiation from human brain.

  19. Preliminary results on soil-emitted gamma radiation and its relation with the local atmospheric electric field at Amieira (Portugal)

    International Nuclear Information System (INIS)

    Lopes, F; Barbosa, S M; Silva, H G; Bárias, S

    2015-01-01

    The atmospheric electric field near the Earth's surface is dominated by atmospheric pollutants and natural radioactivity, with the latter directly linked to radon ( 222 Rn) gas. For a better comprehension on the temporal variability of both the atmospheric electric field and the radon concentration and its relation with local atmospheric variables, simultaneous measurements of soil-emitted gamma radiation and potential gradient (defined from the vertical component of the atmospheric electric field) were taken every minute, along with local meteorological parameters (e.g., temperature, atmospheric pressure, relative humidity and daily solar radiation). The study region is Amieira, part of the Alqueva lake in Alentejo Portugal, where an interdisciplinary meteorological campaign, ALEX2014, took place from June to August 2014. Soil gamma radiation is more sensitive to small concentrations of radon as compared with alpha particles measurements, for that reason it is more suited for sites with low radon levels, as expected in this case. Preliminary results are presented here: statistical and spectral analysis show that i) the potential gradient has a stronger daily cycle as compared with the gamma radiation, ii) most of the energy of the gamma signal is concentrated in the low frequencies (close to 0), contrary to the potential gradient that has most of the energy in frequency 1 (daily cycle) and iii) a short-term relation between gamma radiation and the potential gradient has not been found. Future work and plans are also discussed. (paper)

  20. Assessment of radiofrequency/microwave radiation emitted by the antennas of rooftop-mounted mobile phone base stations

    International Nuclear Information System (INIS)

    Keow, M. A.; Radiman, S.

    2006-01-01

    Radiofrequency (RF) and microwave (MW) radiation exposures from the antennas of rooftop-mounted mobile telephone base stations have become a serious issue in recent years due to the rapidly evolving technologies in wireless telecommunication systems. In Malaysia, thousands of mobile telephone base stations have been erected all over the country, most of which are mounted on the rooftops. In view of public concerns, measurements of the RF/MW levels emitted by the base stations were carried out in this study. The values were compared with the exposure limits set by several organisations and countries. Measurements were performed at 200 sites around 47 mobile phone base stations. It was found that the RF/MW radiation from these base stations were well below the maximum exposure limits set by various agencies. (authors)

  1. Organic materials and devices for detecting ionizing radiation

    Science.gov (United States)

    Doty, F Patrick [Livermore, CA; Chinn, Douglas A [Livermore, CA

    2007-03-06

    A .pi.-conjugated organic material for detecting ionizing radiation, and particularly for detecting low energy fission neutrons. The .pi.-conjugated materials comprise a class of organic materials whose members are intrinsic semiconducting materials. Included in this class are .pi.-conjugated polymers, polyaromatic hydrocarbon molecules, and quinolates. Because of their high resistivities (.gtoreq.10.sup.9 ohmcm), these .pi.-conjugated organic materials exhibit very low leakage currents. A device for detecting and measuring ionizing radiation can be made by applying an electric field to a layer of the .pi.-conjugated polymer material to measure electron/hole pair formation. A layer of the .pi.-conjugated polymer material can be made by conventional polymer fabrication methods and can be cast into sheets capable of covering large areas. These sheets of polymer radiation detector material can be deposited between flexible electrodes and rolled up to form a radiation detector occupying a small volume but having a large surface area. The semiconducting polymer material can be easily fabricated in layers about 10 .mu.m to 100 .mu.m thick. These thin polymer layers and their associated electrodes can be stacked to form unique multi-layer detector arrangements that occupy small volume.

  2. Safety assessment of RF and microwave radiation emitted by the mobile telephone base station (MTBS) in Malaysia: experience and challenge

    International Nuclear Information System (INIS)

    Roha Tukimin; Rozaimah Abd Rahim; Mohamad Amirul Nizam; Mohd Yusof Mohd Ali

    2007-01-01

    Non-ionising radiation (NIR) is known to be hazardous if the amount received is excessive. It is a fact that NIR, including extremely low frequency (ELF) electromagnetic fields, radiofrequency (RF) and microwave radiation can be found almost everywhere generated by both natural and man-made source. This is due to increase in demand for telecommunication and wireless technology which is become very important and as part of our lives. However, the widespread of the relevant technology contributed more NIR man-made sources exposure to the human. Due to public concern their potential of causing such health hazard, members of public and companies approached and request NIR Group of Nuclear Malaysia to carry out surveys and safety assessments of radiofrequency and microwave radiation emitted by the mobile telephone base station (MTBS) erected near the residential area or installed on the rooftop of the commercial building. Objective of the survey was to assess the presence of radiofrequency and microwave radiation and to identify radiation level which may lead to significant personnel exposure. Findings of the survey was compared to the standard guidelines issued by Malaysian Communication and Multimedia Commission (MCMC) and International Committee on Non-Ionising Radiation Protection (ICNIRP). This paper highlights the works that had been carried out by NIR Group of Nuclear Malaysia from 1997 to 2007. We will share the experience and challenge in carried out the NIR safety assessment at mobile telephone base station. Results of the assessment work will be used to develop non-ionising radiation database for future reference in Malaysia. (Author)

  3. Chalcogenide Glass Radiation Sensor; Materials Development, Design and Device Testing

    Energy Technology Data Exchange (ETDEWEB)

    Mitkova, Maria; Butt, Darryl; Kozicki, Michael; Barnaby, Hugo

    2013-04-30

    For many decades, various radiation detecting material have been extensively researched, to find a better material or mechanism for radiation sensing. Recently, there is a growing need for a smaller and effective material or device that can perform similar functions of bulkier Geiger counters and other measurement options, which fail the requirement for easy, cheap and accurate radiation dose measurement. Here arises the use of thin film chalcogenide glass, which has unique properties of high thermal stability along with high sensitivity towards short wavelength radiation. The unique properties of chalcogenide glasses are attributed to the lone pair p-shell electrons, which provide some distinctive optical properties when compared to crystalline material. These qualities are derived from the energy band diagram and the presence of localized states in the band gap. Chalcogenide glasses have band tail states and localized states, along with the two band states. These extra states are primarily due to the lone pair electrons as well as the amorphous structure of the glasses. The localized states between the conductance band (CB) and valence band (VB) are primarily due to the presence of the lone pair electrons, while the band tail states are attributed to the Van der Waal's forces between layers of atoms [1]. Localized states are trap locations within the band gap where electrons from the valence band can hop into, in their path towards the conduction band. Tail states on the other hand are locations near the band gap edges and are known as Urbach tail states (Eu). These states are occupied with many electrons that can participate in the various transformations due to interaction with photons. According to Y. Utsugi et. al.[2], the electron-phonon interactions are responsible for the generation of the Urbach tails. These states are responsible for setting the absorption edge for these glasses and photons with energy near the band gap affect these states. We have

  4. Development of computational pregnant female and fetus models and assessment of radiation dose from positron-emitting tracers

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Tianwu [Geneva University Hospital, Division of Nuclear Medicine and Molecular Imaging, Geneva (Switzerland); Zaidi, Habib [Geneva University Hospital, Division of Nuclear Medicine and Molecular Imaging, Geneva (Switzerland); Geneva University, Geneva Neuroscience Center, Geneva (Switzerland); University of Groningen, University Medical Center Groningen, Department of Nuclear Medicine and Molecular Imaging, Groningen (Netherlands); University of Southern Denmark, Department of Nuclear Medicine, Odense (Denmark)

    2016-12-15

    Molecular imaging using PET and hybrid (PET/CT and PET/MR) modalities nowadays plays a pivotal role in the clinical setting for diagnosis and staging, treatment response monitoring, and radiation therapy treatment planning of a wide range of oncologic malignancies. The developing embryo/fetus presents a high sensitivity to ionizing radiation. Therefore, estimation of the radiation dose delivered to the embryo/fetus and pregnant patients from PET examinations to assess potential radiation risks is highly praised. We constructed eight embryo/fetus models at various gestation periods with 25 identified tissues according to reference data recommended by the ICRP publication 89 representing the anatomy of the developing embryo/fetus. The developed embryo/fetus models were integrated into realistic anthropomorphic computational phantoms of the pregnant female and used for estimating, using Monte Carlo calculations, S-values of common positron-emitting radionuclides, organ absorbed dose, and effective dose of a number of positron-emitting labeled radiotracers. The absorbed dose is nonuniformly distributed in the fetus. The absorbed dose of the kidney and liver of the 8-week-old fetus are about 47.45 % and 44.76 % higher than the average absorbed dose of the fetal total body for all investigated radiotracers. For {sup 18}F-FDG, the fetal effective doses are 2.90E-02, 3.09E-02, 1.79E-02, 1.59E-02, 1.47E-02, 1.40E-02, 1.37E-02, and 1.27E-02 mSv/MBq at the 8th, 10th, 15th, 20th, 25th, 30th, 35th, and 38th weeks of gestation, respectively. The developed pregnant female/fetus models matching the ICRP reference data can be exploited by dedicated software packages for internal and external dose calculations. The generated S-values will be useful to produce new standardized dose estimates to pregnant patients and embryo/fetus from a variety of positron-emitting labeled radiotracers. (orig.)

  5. Analysis of chemical degradation mechanism of phosphorescent organic light emitting devices by laser-desorption/ionization time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Rabelo de Moraes, Ines; Scholz, Sebastian; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany)

    2010-07-01

    Phosphorescent organic light emitting diodes (OLEDs) have attracted much interest for their potential application in full color flat-panel displays and as an alternative lighting source. However, low efficiency, and the short operation lifetime, in particular in the case of blue emitting devices, are the major limitations for the current OLEDs commercialization. In order to overcome these limitations, a deep knowledge about the aging and the degradation mechanism is required. Our work focuses on the chemical degradation mechanism of different iridium based emitter materials like FIrpic (light blue) and Ir(ppy)3 (green), commonly used in OLEDs. For this purpose, the devices were aged by electrical driving until the luminance reached 6% of the initial luminance. The laser-desorption/ionization time-of-flight mass spectrometry was used to determine specific degradation pathways.

  6. Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

    International Nuclear Information System (INIS)

    Wang Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Gaspar, Daniel J.; Padmaperuma, Asanga B.; Berry, Joseph J.; Ginley, David S.

    2010-01-01

    Organic light emitting devices have been achieved with an indium-free transparent anode, Ga doped ZnO (GZO). A large area coating technique was used (RF magnetron sputtering) to deposit the GZO films onto glass. The respective organic light emitting devices exhibited an operational voltage of 3.7 V, an external quantum efficiency of 17%, and a power efficiency of 39 lm/W at a current density of 1 mA/cm 2 . These parameters are well within acceptable standards for blue OLEDs to generate a white light with high enough brightness for general lighting applications. It is expected that high-efficiency, long-lifetime, large area, and cost-effective white OLEDs can be made with these indium-free anode materials.

  7. Influence of radiation-dose pattern from inhaled beta--gamma-emitting radionuclides on canine peripheral lymphocytes

    International Nuclear Information System (INIS)

    Jones, R.K.; Boecker, B.B.; Pickrell, J.A.; Hobbs, C.H.; McClellan, R.O.

    1976-01-01

    As part of studies assess the biological hazards associated with inhaled radionuclides, periodic hematologic evaluations were performed on beagle dogs given a single nose-only exposure to aerosols of beta--gamma-emitting isotopes. The physical form and specific radionuclides selected produced radiation-dose patterns representative of those which might be encountered in the event of human accidental exposures. Dogs received graded lung burdens of either 90 Y, 91 Y, 144 Ce, or 90 Sr, each in fused clay. Differences in the effective half-lives of these radionuclides resulted in a spectrum of cumulative radiation doses to lung delivered at a variety of dose rates. Since the form in which the radionuclides were inhaled was relatively insoluble, the lung and intrathoracic tissues represented the primary recipient of the dose. Regardless of the effective half-life of radionuclide retention, a dose-related depression of peripheral lymphocytes was observed at various times after inhalation exposure. The time at which maximum depression and subsequent recovery occurred, however, was most directly related to the effective half-life of the radionuclide. Of special interest was the persistence of lymphopenia through 2 1 / 2 years after exposure to 144 Ce and 90 Sr in fused clay where, other than tracheobronchial lymph nodes, the lymphoid tissue received very little radiation dose. The possible mechanisms responsible for lymphocyte depression from these various radiation-dose patterns are discussed

  8. Linear devices in combined high-level radiation environments

    International Nuclear Information System (INIS)

    van Vonno, N.W.

    1987-01-01

    The design of precision analog integrated circuits for use in combined high-level radiation environments has traditionally been on a full-custom basis. The use of semicustom design methods has become prevalent in digital devices, with standard cell libraries and gate arrays readily available from multiple vendors. This paper addresses the application of semicustom design techniques to analog parts. In all cases the emphasis is on bipolar technology, since this provides an optimal combination of precision and radiation hardness. A mixed mode analog/digital (A/D) cell family for implementing semicustom designs is described, together with the fabrication process used. Specific processing and design methods are used to provide circuit hardness against neutron, total gamma dose, and transient gamma environments. Semicustom mixed analog/digital design is seen as an appropriate methodology for implementation of medium-performance mixed mode functions for radiation-hardened applications. This leads to trade-offs in process complexity and performance. Full custom design remains necessary for demanding applications such as high-speed A/D conversion and associated sample/hold functions. An A/D cell family optimized for hardness is described, together with the bipolar process used to implement it

  9. High ionization radiation field remote visualization device - shielding requirements

    International Nuclear Information System (INIS)

    Fernandez, Antonio P. Rodrigues; Omi, Nelson M.; Silveira, Carlos Gaia da; Calvo, Wilson A. Pajero

    2011-01-01

    The high activity sources manipulation hot-cells use special and very thick leaded glass windows. This window provides a single sight of what is being manipulated inside the hot-cell. The use of surveillance cameras would replace the leaded glass window, provide other sights and show more details of the manipulated pieces, using the zoom capacity. Online distant manipulation may be implemented, too. The limitation is their low ionizing radiation resistance. This low resistance also limited the useful time of robots made to explore or even fix problematic nuclear reactor core, industrial gamma irradiators and high radioactive leaks. This work is a part of the development of a high gamma field remote visualization device using commercial surveillance cameras. These cameras are cheap enough to be discarded after the use for some hours of use in an emergency application, some days or some months in routine applications. A radiation shield can be used but it cannot block the camera sight which is the shield weakness. Estimates of the camera and its electronics resistance may be made knowing each component behavior. This knowledge is also used to determine the optical sensor type and the lens material, too. A better approach will be obtained with the commercial cameras working inside a high gamma field, like the one inside of the IPEN Multipurpose Irradiator. The goal of this work is to establish the radiation shielding needed to extend the camera's useful time to hours, days or months, depending on the application needs. (author)

  10. Response of Caenorhabditis elegans to wireless devices radiation exposure.

    Science.gov (United States)

    Fasseas, Michael K; Fragopoulou, Adamantia F; Manta, Areti K; Skouroliakou, Aikaterini; Vekrellis, Konstantinos; Margaritis, Lukas H; Syntichaki, Popi

    2015-03-01

    To examine the impact of electromagnetic radiation, produced by GSM (Global System for Mobile communications) mobile phones, Wi-Fi (Wireless-Fidelity) routers and wireless DECT (Digital Enhanced Cordless Telecommunications) phones, on the nematode Caenorhabditis elegans. We exposed synchronized populations, of different developmental stages, to these wireless devices at E-field levels below ICNIRP's (International Commission on Non-Ionizing Radiation Protection) guidelines for various lengths of time. WT (wild-type) and aging- or stress-sensitive mutant worms were examined for changes in growth, fertility, lifespan, chemotaxis, short-term memory, increased ROS (Reactive Oxygen Species) production and apoptosis by using fluorescent marker genes or qRT-PCR (quantitative Reverse Transcription-Polymerase Chain Reaction). No statistically significant differences were found between the exposed and the sham/control animals in any of the experiments concerning lifespan, fertility, growth, memory, ROS, apoptosis or gene expression. The worm appears to be robust to this form of (pulsed) radiation, at least under the exposure conditions used.

  11. Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

    2014-04-15

    In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

  12. Specification for symbol for ionizing radiation

    International Nuclear Information System (INIS)

    1974-01-01

    This Malaysia Standard specification specifies a symbol recommended for use only to signify the actual or potential presence of ionizing radiation (#betta#, α, #betta# only) and to identify objects, devices, materials or combinations of materials which emit such radiation. (author)

  13. Generation of tunable narrow-band surface-emitted terahertz radiation in periodically poled lithium niobate.

    Science.gov (United States)

    Weiss, C; Torosyan, G; Avetisyan, Y; Beigang, R

    2001-04-15

    Generation of tunable narrow-band terahertz (THz) radiation perpendicular to the surface of periodically poled lithium niobate by optical rectification of femtosecond pulses is reported. The generated THz radiation can be tuned by use of different poling periods and different observation angles, limited only by the available bandwidth of the pump pulse. Typical bandwidths were 50-100 GHz, depending on the collection angle and the number of periods involved.

  14. The use of ionising radiation screening devices in airports

    International Nuclear Information System (INIS)

    Lazo, T.

    2010-01-01

    Although the NEA generally focuses on radiological protection at nuclear power plants and related facilities, it also addresses other areas of radiological protection of interest to member countries. A particular subject of recent importance concerns the use of ionising radiation screening devices as part of airport security efforts. Modern body scanners can produce human images that can be used to detect weapons that may be hidden beneath a person's clothing. Heightened concerns over terrorist threats to airline flights have prompted many countries to consider the use, or expanded use of body scanners. The use of such devices raises a wide series of questions, some of which concern the radiological protection of those who might be scanned. As such, the Inter-Agency Committee on Radiation Safety (IACRS), an expert body in which the NEA works together with several other international organisations addressing radiological protection issues, recently developed a joint information paper laying out the key radiological protection and other issues that should be or have been considered when making decisions as to whether ionising radiation body scanners should be deployed in airports. This article provides an overview of the information paper. In assessing the possible use of X-ray body scanners, there are two significant radiological protection issues that may be of relevance with regard to the government decision whether their use is justified. First, although the individual exposures are very low, the exposure experienced by the scanned population as a whole will depend on whether all passengers are systematically scanned, or alternatively whether passengers are selected for scanning randomly or on the basis of specific criteria. The manner in which passengers would be selected would need to be known in order to appropriately assess the full radiological protection impact of scanner use. Second, the use of X-ray body scanners on sensitive groups, such as pregnant

  15. Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

    Energy Technology Data Exchange (ETDEWEB)

    Yuan Yongbo; Lian Jiarong; Li Shuang; Zhou Xiang [State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, 510275 (China)], E-mail: stszx@mail.sysu.edu.cn

    2008-11-21

    Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq{sub 3} as the mass ratio of Alq{sub 3} to ADN was varied from 1 to 50%. The devices with an optimal Alq{sub 3} mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A{sup -1} and 2.7% at a luminance of 1371 cd m{sup -2}, which is improved by a factor of 2.2 compared with 4.1 cd A{sup -1} and 1.2% at a luminance of 3267 cd m{sup -2} for conventional devices with the neat Alq{sub 3} as the EML.

  16. Monte Carlo simulation of radiative transfer in scattering, emitting, absorbing slab with gradient index

    International Nuclear Information System (INIS)

    Huang Yong; Liang Xingang; Xia Xinlin

    2005-01-01

    The Monte Carlo method is used to simulate the thermal emission of absorbing-emitting-scattering slab with gradient index. Three Monte Carlo ray-tracing strategies are considered. The first strategy is keeping the real distribution of the refractive index and to trace bundles in a curve route. The second strategy is discretizing the slab into sub-layers, each having constant refractive index. The bundle is traced in a straight route in each sub-layer and the reflection at the inner interface is taken into account. The third strategy is similar to the second one but only the total reflection at the inner interface is computed. Little difference is observed among the results of apparent thermal emission by these three different Monte Carlo ray tracing strategies. The results also show that the apparent hemispherical emissivity non-monotonously varies with increasing optical thickness of the slab with strong scattering gradient index. Many parameters can influence the apparent thermal emission greatly

  17. NASDA technician test real-time radiation monitoring device

    Science.gov (United States)

    1997-01-01

    A technician from the National Space Development Agency of Japan (NASDA) tests the real-time radiation monitoring device on SPACEHAB at Kennedy Space Center in preparation for the STS-89 mission, slated to be the first Shuttle launch of 1998. STS-89 will be the eighth of nine scheduled Mir dockings and will include a double module of SPACEHAB, used mainly as a large pressurized cargo container for science, logistical equipment and supplies to be exchanged between the orbiter Endeavour and the Russian Space Station Mir. The nine-day flight of STS-89 also is scheduled to include the transfer of the seventh American to live and work aboard the Russian orbiting outpost. Liftoff of Endeavour and its seven-member crew is targeted for Jan. 15, 1998, at 1:03 a.m. EDT from Launch Pad 39A.

  18. Reprint of 'Evaluation of Scattered Radiation Emitted From X-ray Security Scanners on Occupational Dose to Airport Personnel'

    Science.gov (United States)

    Dalah, Entesar; Fakhry, Angham; Mukhtar, Asma; Al Salti, Farah; Bader, May; Khouri, Sara; Al-Zahmi, Reem

    2017-11-01

    Based on security issues and regulations airports are provided with luggage cargo scanners. These scanners utilize ionizing radiation that in principle present health risks toward humans. The study aims to investigate the amount of backscatter produced by passenger luggage and cargo toward airport personnel who are located at different distances from the scanners. To approach our investigation a Thermo Electron Radeye-G probe was used to quantify the backscattered radiation measured in terms of dose-rate emitted from airport scanners, Measurements were taken at the entrance and exit positions of the X-ray tunnel at three different distances (0, 50, and 100 cm) for two different scanners; both scanners include shielding curtains that reduce scattered radiation. Correlation was demonstrated using the Pearson coefficient test. Measurements confirmed an inverse relationship between dose rate and distance. An estimated occupational accumulative dose of 0.88 mSv/y, and 2.04 mSv/y were obtained for personnel working in inspection of carry-on, and cargo, respectively. Findings confirm that the projected dose of security and engineering staff are being well within dose limits.

  19. Electromagnetic radiation emitted by a plasma produced in air by laser pulses with lambda = 10.6 μm

    International Nuclear Information System (INIS)

    Danilychev, V.A.; Zvorykin, V.D.; Kholin, I.V.; Chugunov, A.Y.

    1981-01-01

    The spectrum, brightness, and energy have been measured for the electromagnetic radiation emitted by a plasma produced in air near a solid surface by pulses from a high-power CO 2 laser. The air pressure was varied over the range p 0 = 0.1--760 torr, and the laser power density was varied over the range q = 5 x 10 6 --10 8 W/cm 2 . At p 0 > or approx. =2--5 torr the radiation properties of the plasma are determined by a laser-beam absorption wave which arises in the gas. The maximum brightness temperature, T/sub b/approx. =50 000 K (lambda = 400 +- 20 nm), is reached at p 0 = 25 torr. The emission spectrum is quite different from an equilibrium spectrum, consisting primarily of NII, OII, and NIII lines. The total energy radiation by the plasma in the wavelength interval 360--2600 nm into a solid angle of 4π sr reaches 2.3% of the laser pulse energy

  20. Palliative treatment with radiation-emitting metallic stents in unresectable Bismuth type III or IV hilar cholangiocarcinoma.

    Science.gov (United States)

    Lu, Jian; Guo, Jin-He; Zhu, Hai-Dong; Zhu, Guang-Yu; Wang, Yong; Zhang, Qi; Chen, Li; Wang, Chao; Pan, Tian-Fan; Teng, Gao-Jun

    2017-01-01

    The emerging data for stenting in combination with brachytherapy in unresectable hilar cholangiocarcinoma are encouraging. The aim of this study was to evaluate the efficacy and safety of radiation-emitting metallic stents (REMS) for unresectable Bismuth type III or IV hilar cholangiocarcinoma. Consecutive patients who underwent percutaneous placement with REMS or uncovered self-expandable metallic stent (SEMS) for unresectable Bismuth type III or IV hilar cholangiocarcinoma between September 2011 and April 2016 were identified into this retrospective study. Data on patient demographics and overall survival, functional success, stent patency and complications were collected at the authors' hospital. A total of 59 patients were included: 33 (55.9%) in the REMS group and 26 (44.1%) in the SEMS group. The median overall survival was 338 days in the REMS group and 141 days in the SEMS group (philar cholangiocarcinoma, and seems to prolong survival as well as patency of stent in these patients.

  1. Note: Real time optical sensing of alpha-radiation emitting radioactive aerosols based on solid state nuclear track detector

    International Nuclear Information System (INIS)

    Kulkarni, A.; Bak, M. S.; Ha, S.; Joshirao, P.; Manchanda, V.; Kim, T.

    2015-01-01

    A sensitive radioactive aerosols sensor has been designed and developed. Its design guidance is based on the need for a low operational cost and reliable measurements to provide daily aerosol monitoring. The exposure of diethylene-glycol bis (allylcarbonate) to radiation causes modification of its physico-chemical properties like surface roughness and reflectance. In the present study, optical sensor based on the reflectance measurement has been developed with an aim to monitor real time presence of alpha radioactive aerosols emitted from thorium nitrate hydrate. The results shows that the fabricated sensor can detect 0.0157 kBq to 0.1572 kBq of radio activity by radioactive aerosols generated from (Th(NO 3 ) 4 ⋅ 5H 2 O) at 0.1 ml/min flow rate. The proposed instrument will be helpful to monitor radioactive aerosols in/around a nuclear facility, building construction sites, mines, and granite polishing factories

  2. Note: Real time optical sensing of alpha-radiation emitting radioactive aerosols based on solid state nuclear track detector

    Science.gov (United States)

    Kulkarni, A.; Ha, S.; Joshirao, P.; Manchanda, V.; Bak, M. S.; Kim, T.

    2015-06-01

    A sensitive radioactive aerosols sensor has been designed and developed. Its design guidance is based on the need for a low operational cost and reliable measurements to provide daily aerosol monitoring. The exposure of diethylene-glycol bis (allylcarbonate) to radiation causes modification of its physico-chemical properties like surface roughness and reflectance. In the present study, optical sensor based on the reflectance measurement has been developed with an aim to monitor real time presence of alpha radioactive aerosols emitted from thorium nitrate hydrate. The results shows that the fabricated sensor can detect 0.0157 kBq to 0.1572 kBq of radio activity by radioactive aerosols generated from (Th(NO3)4 ṡ 5H2O) at 0.1 ml/min flow rate. The proposed instrument will be helpful to monitor radioactive aerosols in/around a nuclear facility, building construction sites, mines, and granite polishing factories.

  3. Note: Real time optical sensing of alpha-radiation emitting radioactive aerosols based on solid state nuclear track detector

    Energy Technology Data Exchange (ETDEWEB)

    Kulkarni, A.; Bak, M. S., E-mail: tkim@skku.edu, E-mail: moonsoo@skku.edu [School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Ha, S. [SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Joshirao, P.; Manchanda, V. [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, T., E-mail: tkim@skku.edu, E-mail: moonsoo@skku.edu [School of Mechanical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2015-06-15

    A sensitive radioactive aerosols sensor has been designed and developed. Its design guidance is based on the need for a low operational cost and reliable measurements to provide daily aerosol monitoring. The exposure of diethylene-glycol bis (allylcarbonate) to radiation causes modification of its physico-chemical properties like surface roughness and reflectance. In the present study, optical sensor based on the reflectance measurement has been developed with an aim to monitor real time presence of alpha radioactive aerosols emitted from thorium nitrate hydrate. The results shows that the fabricated sensor can detect 0.0157 kBq to 0.1572 kBq of radio activity by radioactive aerosols generated from (Th(NO{sub 3}){sub 4} ⋅ 5H{sub 2}O) at 0.1 ml/min flow rate. The proposed instrument will be helpful to monitor radioactive aerosols in/around a nuclear facility, building construction sites, mines, and granite polishing factories.

  4. Sensor device for X-ray beam to evaluate the radiation focal spot

    International Nuclear Information System (INIS)

    Santos, Lara H.E. dos; Schiabel, Homero; Silva, Aderbal A.B. da; Marques, Paulo M.A.; Campos, Marcelo; Slaets, Annie F.F.

    1996-01-01

    A new electronic device to determine the position of the central ray of the radiation beam is proposed. The device aims to provide a perfect alignment of test objects used for evaluating focal spots with this reference axis

  5. Charge-coupled devices as positron sensitive detectors of x-radiation

    International Nuclear Information System (INIS)

    Volkov, G.S.; Zazhivikhin, V.V.; Zajtsev, V.I.; Mishevskij, V.O.

    1996-01-01

    Results of theoretical and experimental studies on the sensitivity and spatial resolution of devices with a charge link (CLD) within the X-radiation energy range are described. The areas of the device application are considered

  6. Instrumentation measurement and testing complex for detection and identification of radioactive materials using the emitted radiation

    International Nuclear Information System (INIS)

    Samossadny, V.T.; Dmitrenko, V.V.; Kadlin, V.V.; Kolesnikov, S.V.; Ulin, S.E.; Grachev, V.M.; Vlasik, K.F.; Dedenko, G.L.; Novikov, D.V.; Uteshev, Z.M.

    2006-01-01

    Simultaneous measurement of neutron and gamma radiation is a very usefull method for effective nuclear materials identification and control. The gamma-ray-neutron complex described in the paper is based on two multi-layer 3 He neutrons detectors and two High Pressure Xenon gamma-ray spectrometers assembled in one unit. All these detectors were callibrated on neutron and gamma-ray sources. The main characteristics of the instrumentation , its testing results and gamma-ray and neutron radiation parameters, which have been measured are represented in the paper. The gamma-neutron sources and fissile materials reliable detection and identification capability was demonstrated

  7. Thermal and radiation losses in a linear device

    International Nuclear Information System (INIS)

    Rosenau, P.; Degani, D.

    1980-01-01

    An analysis is presented of the electron temperature in a linear device which includes the effect of thermal conduction, heat flux limit, radiation, and end plugs. It is found that the thermal conduction and the heat flux limit are dominant in the initial phase of cooling, while the later phase is almost completely controlled by radiation that spatially homogenizes the temperature distribution. In the case of bremsstrahlung, within the frame of the present model, the temperature decays to zero in a finite time. This process takes the form of a cooling wave that moves from the ends of the column to the center. Impurities cause a milder, exponential decay, which is still much faster than the algebraic conduction decay. The thermal effectiveness of the end plugs is described by a convective transfer coefficient h/sub p/. Its scaling law (in terms of the coupled plamsa-plug system) reveals that a very high plug-plasma density ratio provides a simple way to significantly retard the cooling

  8. Novel hybrid light-emitting devices based on MAPbBr3 nanoplatelets:PVK nanocomposites and zinc oxide nanorod arrays

    Science.gov (United States)

    Wang, Szu-Ping; Chang, Chun-Kai; Yang, Sheng-Hsiung; Chang, Che-Yu; Chao, Yu-Chiang

    2018-01-01

    In this research, we demonstrate inverted perovskite light-emitting devices (PeLEDs) based on zinc oxide nanorod arrays (ZnO NAs) as the electron transport layer and methylammonium lead bromide nanoplatelets (MAPbBr3 NPLs) as the emissive material for the first time. The polyethyleneimine ethoxylated (PEIE) was inserted between the ZnO NAs and the MAPbBr3 NPLs layer to reduce the energy barrier and improve the electron injection efficiency. Besides, different weight ratios of poly(N-vinylcarbazole) (PVK) were blended with MAPbBr3 NPLs to make evenly dispersed nanocomposite films, thereby enhancing the performance of devices. Meanwhile, the photoluminescence of MAPbBr3 NPLs:PVK nanocomposite film was increased due to reduced self-quenching and prolonged carrier lifetime. Inverted PeLEDs with the configuration of ITO/PEIE-modified ZnO NAs/MAPbBr3 NPLs:PVK/TFB/Au were fabricated and evaluated, using TFB as the hole transport layer. The current density of the devices containing PVK matrix was significantly suppressed compared to those without PVK. Herein, the best device revealed a max brightness of 495 cd m-2 and a low turn-on voltage of 3.1 V that shows potential use in light-emitting applications.

  9. Improved performances of red organic light-emitting devices by co-doping a rubrene derivative and DCJTB into tris-(8-hydroxyquinoline) aluminum host

    Energy Technology Data Exchange (ETDEWEB)

    Li Tianle [Physics Department, School of Science, Maoming University, Maoming 525000 (China); Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Wenlian, E-mail: wllioel@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Xiao [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Chu Bei, E-mail: beichubox@hotmail.co [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Su Zisheng; Han Liangliang; Chen Yiren [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Hu Zhizhi; Zhang Zhiqiang [Optic Photo-Electronic Materials and Research Development Center, Liaoning University of Science and Technology, Anshan 114044 (China)

    2010-10-15

    Performances of red organic light-emitting device were improved by co-doping 2-formyl-5,6,11,12-tetraphenylnaphthacene (2FRb) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl) -4H-pyran (DCJTB) in tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) host as the emitting layer. The device with 1 wt% DCJTB and 2.4 w% 2FRb in Alq{sub 3} host gave a saturated red emission with CIE chromaticity coordinates of (0.65, 0.35) and a maximum current efficiency as high as 6.45 cd/A, which are 2 and 2.4 fold larger than that of the device with 1 wt% DCJTB (3.28 cd/A) in Alq{sub 3} host and the device with 2.4 wt% 2FRb (2.72 cd/A) in Alq{sub 3} host at the current density of 20 mA/cm{sup 2}, respectively. The improvement could be attributed to the effective utilization of host energy by both energy transfer and trapping in the electroluminescence process and the depression of concentration quenching between the dopants molecules.

  10. A Numerical Simulation for Prediction of Infrared Radiation Emitted from Plain Surfaces with Different Geometries

    Directory of Open Access Journals (Sweden)

    Vakilabadi K.A.

    2017-08-01

    Full Text Available In this paper, infrared radiation exiting plain surfaces with different geometries is numerically simulated. Surfaces under consideration are assumed to have steady uniform heat generation inside. Moreover, the boundaries of the surfaces are considered to be at the surroundings temperature. Infrared radiation is calculated based on the temperature profile determined for the surface. The temperature profile of the surface is determined assuming the two dimensional heat conduction equations to govern the problem. The physical domain is transformed into the appropriate computational domain and the governing equation is mapped into the suitable forms in the new coordinate system of variables. After that the temperature profile of the surface is computed, the infrared radiation distribution of the surface is evaluated based on the equations given in the manuscript. The temperature profile as well as the IR images are given in the results section. It is concluded that the maximum value of infrared radiation of the surface occurs at the center. Moreover, it is concluded that among surfaces with equal areas, the one having the largest perimeter has the least value of IR at its center.

  11. INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

    Science.gov (United States)

    Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

    1987-12-01

    The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

  12. Modeling and parameterization of photoelectrons emitted in condensed matter by linearly polarized synchrotron radiation

    Science.gov (United States)

    Jablonski, A.

    2018-01-01

    Growing availability of synchrotron facilities stimulates an interest in quantitative applications of hard X-ray photoemission spectroscopy (HAXPES) using linearly polarized radiation. An advantage of this approach is the possibility of continuous variation of radiation energy that makes it possible to control the sampling depth for a measurement. Quantitative applications are based on accurate and reliable theory relating the measured spectral features to needed characteristics of the surface region of solids. A major complication in the case of polarized radiation is an involved structure of the photoemission cross-section for hard X-rays. In the present work, details of the relevant formalism are described and algorithms implementing this formalism for different experimental configurations are proposed. The photoelectron signal intensity may be considerably affected by variation in the positioning of the polarization vector with respect to the surface plane. This information is critical for any quantitative application of HAXPES by polarized X-rays. Different quantitative applications based on photoelectrons with energies up to 10 keV are considered here: (i) determination of surface composition, (ii) estimation of sampling depth, and (iii) measurements of an overlayer thickness. Parameters facilitating these applications (mean escape depths, information depths, effective attenuation lengths) were calculated for a number of photoelectron lines in four elemental solids (Si, Cu, Ag and Au) in different experimental configurations and locations of the polarization vector. One of the considered configurations, with polarization vector located in a plane perpendicular to the surface, was recommended for quantitative applications of HAXPES. In this configurations, it was found that the considered parameters vary weakly in the range of photoelectron emission angles from normal emission to about 50° with respect to the surface normal. The averaged values of the mean

  13. Estimation of four-dimensional dose distribution using electronic portal imaging device in radiation therapy

    International Nuclear Information System (INIS)

    Mizoguchi, Asumi; Arimura, Hidetaka; Shioyama, Yoshiyuki

    2013-01-01

    We are developing a method to evaluate four-dimensional radiation dose distribution in a patient body based upon the animated image of EPID (electronic portal imaging device) which is an image of beam-direction at the irradiation. In the first place, we have obtained the image of the dose which is emitted from patient body at therapy planning using therapy planning CT image and dose evaluation algorism. In the second place, we have estimated the emission dose image at the irradiation using EPID animated image which is obtained at the irradiation. In the third place, we have got an affine transformation matrix including respiratory movement in the body by performing linear registration on the emission dose image at therapy planning to get the one at the irradiation. In the fourth place, we have applied the affine transformation matrix on the therapy planning CT image and estimated the CT image 'at irradiation'. Finally we have evaluated four-dimensional dose distribution by calculating dose distribution in the CT image 'at irradiation' which has been estimated for each frame of the EPID animated-image. This scheme may be useful for evaluating therapy results and risk management. (author)

  14. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    Science.gov (United States)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-07-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

  15. Reference neutron radiations. Part 2: Calibration fundamentals of radiation protection devices related to the basic quantities characterizing the radiation field

    International Nuclear Information System (INIS)

    2000-01-01

    ISO 8529 consists of the following parts, under the general title Reference neutron radiations: Part 1: Characteristics and methods of production; Part 2: Calibration fundamentals of radiation protection devices related to the basic quantities characterizing the radiation field; Part 3: Calibration of area and personal dosimeters and determination of response as a function of energy and angle of incidence. This Part 2. of ISO 8529 takes as its starting point the neutron sources described in ISO 8529-1. It specifies the procedures to be used for realizing the calibration conditions of radiation protection devices in neutron fields produced by these calibration sources, with particular emphasis on the corrections for extraneous effects (e.g., the neutrons scattered from the walls of the calibration room). In this part of ISO 8529, particular emphasis is placed on calibrations using radionuclide sources (clauses 4 to 6) due to their widespread application, with less details given on the use of accelerator and reactor sources (8.2 and 8.3). This part of ISO 8529 then leads to ISO 8529-3 which gives conversion coefficients and the general rules and procedures for calibration

  16. Resistive Memory Devices for Radiation Resistant Non-Volatile Memory

    Data.gov (United States)

    National Aeronautics and Space Administration — Ionizing radiation in space can damage electronic equipment, corrupting data and even disabling computers. Radiation resistant (rad hard) strategies must be employed...

  17. Radiation transmission type pipe wall thinning detection device and measuring instruments utilizing ionizing radiation

    International Nuclear Information System (INIS)

    Higashi, Yasuhiko

    2009-01-01

    We developed the device to detect thinning of pipe thorough heat insulation in Power Plant, etc, even while the plant is under operation. It is necessary to test many parts of many pipes for pipe wall thinning management, but it is difficult within a limited time of the routine test. This device consists of detector and radiation source, which can detect the pipe (less than 500 mm in external diameter, less than 50 mm in thickness) with 1.6%-reproducibility (in a few-minutes measurement), based on the attenuation rate. Operation is easy and effective without removing the heat insulation. We will expand this thinning detection system, and contribute the safety of the Plant. (author)

  18. Sensitivity to Antibiotics of Bacteria Exposed to Gamma Radiation Emitted from Hot Soils of the High Background Radiation Areas of Ramsar, Northern Iran.

    Science.gov (United States)

    Mortazavi, Seyed Mohammad Javad; Zarei, Samira; Taheri, Mohammad; Tajbakhsh, Saeed; Mortazavi, Seyed Alireza; Ranjbar, Sahar; Momeni, Fatemeh; Masoomi, Samaneh; Ansari, Leila; Movahedi, Mohammad Mehdi; Taeb, Shahram; Zarei, Sina; Haghani, Masood

    2017-04-01

    Over the past several years our laboratories have investigated different aspects of the challenging issue of the alterations in bacterial susceptibility to antibiotics induced by physical stresses. To explore the bacterial susceptibility to antibiotics in samples of Salmonella enterica subsp. enterica serovar Typhimurium ( S. typhimurium ), Staphylococcus aureus , and Klebsiella pneumoniae after exposure to gamma radiation emitted from the soil samples taken from the high background radiation areas of Ramsar, northern Iran. Standard Kirby-Bauer test, which evaluates the size of the zone of inhibition as an indicator of the susceptibility of different bacteria to antibiotics, was used in this study. The maximum alteration of the diameter of inhibition zone was found for K. pneumoniae when tested for ciprofloxacin. In this case, the mean diameter of no growth zone in non-irradiated control samples of K. pneumoniae was 20.3 (SD 0.6) mm; it was 14.7 (SD 0.6) mm in irradiated samples. On the other hand, the minimum changes in the diameter of inhibition zone were found for S. typhimurium and S. aureus when these bacteria were tested for nitrofurantoin and cephalexin, respectively. Gamma rays were capable of making significant alterations in bacterial susceptibility to antibiotics. It can be hypothesized that high levels of natural background radiation can induce adaptive phenomena that help microorganisms better cope with lethal effects of antibiotics.

  19. Sensitivity to Antibiotics of Bacteria Exposed to Gamma Radiation Emitted from Hot Soils of the High Background Radiation Areas of Ramsar, Northern Iran

    Directory of Open Access Journals (Sweden)

    Seyed Mohammad Javad Mortazavi

    2017-04-01

    Full Text Available Background: Over the past several years our laboratories have investigated different aspects of the challenging issue of the alterations in bacterial susceptibility to antibiotics induced by physical stresses. Objective: To explore the bacterial susceptibility to antibiotics in samples of Salmonella enterica subsp. enterica serovar Typhimurium (S. typhimurium, Staphylococcus aureus, and Klebsiella pneumoniae after exposure to gamma radiation emitted from the soil samples taken from the high background radiation areas of Ramsar, northern Iran. Methods: Standard Kirby-Bauer test, which evaluates the size of the zone of inhibition as an indicator of the susceptibility of different bacteria to antibiotics, was used in this study. Results: The maximum alteration of the diameter of inhibition zone was found for K. pneumoniae when tested for ciprofloxacin. In this case, the mean diameter of no growth zone in non-irradiated control samples of K. pneumoniae was 20.3 (SD 0.6 mm; it was 14.7 (SD 0.6 mm in irradiated samples. On the other hand, the minimum changes in the diameter of inhibition zone were found for S. typhimurium and S. aureus when these bacteria were tested for nitrofurantoin and cephalexin, respectively. Conclusion: Gamma rays were capable of making significant alterations in bacterial susceptibility to antibiotics. It can be hypothesized that high levels of natural background radiation can induce adaptive phenomena that help microorganisms better cope with lethal effects of antibiotics.

  20. Developments of radiation safety requirements for the management of radiation devices

    International Nuclear Information System (INIS)

    Lee, Hee Seock; Choi, Jin Ho; Cheong, Yuon Young

    2002-03-01

    The approach of the risk-informed regulatory options was studied to develop the radiation safety requirements for the managements for radiation devices. The task analysis, exposure, accident scenario development, risk analysis, and systematic approach for regulatory options was considered in full, based on the NRC report, 'NUREG/CR-6642', and the translation of its core part was conducted for ongoing research. In this methodology, the diamond tree that includes human factors, etc, additionally with normal event tree, was used. According to the analysis results of this approach, the risk analysis and the development of regulatory options were applied for the electron linear accelerators and the qualitative results were obtained. Because the field user groups were participated in this study could contribute to the basis establishment of the risk-informed regulation policy through securing consensus and inducing particle interests. It will make an important role of establishing the detail plan of ongoing research

  1. Developments of radiation safety requirements for the management of radiation devices

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hee Seock [Pohang Accelerator Lab, Pohang (Korea, Republic of); Choi, Jin Ho [Gachun University of Medicine and science, Incheon (Korea, Republic of); Cheong, Yuon Young [Asan Medical Center, Seoul (Korea, Republic of)] (and others)

    2002-03-15

    The approach of the risk-informed regulatory options was studied to develop the radiation safety requirements for the managements for radiation devices. The task analysis, exposure, accident scenario development, risk analysis, and systematic approach for regulatory options was considered in full, based on the NRC report, 'NUREG/CR-6642', and the translation of its core part was conducted for ongoing research. In this methodology, the diamond tree that includes human factors, etc, additionally with normal event tree, was used. According to the analysis results of this approach, the risk analysis and the development of regulatory options were applied for the electron linear accelerators and the qualitative results were obtained. Because the field user groups were participated in this study could contribute to the basis establishment of the risk-informed regulation policy through securing consensus and inducing particle interests. It will make an important role of establishing the detail plan of ongoing research.

  2. Mobile phone base station-emitted radiation does not induce phosphorylation of Hsp27.

    Science.gov (United States)

    Hirose, H; Sakuma, N; Kaji, N; Nakayama, K; Inoue, K; Sekijima, M; Nojima, T; Miyakoshi, J

    2007-02-01

    An in vitro study focusing on the effects of low-level radiofrequency (RF) fields from mobile radio base stations employing the International Mobile Telecommunication 2000 (IMT-2000) cellular system was conducted to test the hypothesis that modulated RF fields act to induce phosphorylation and overexpression of heat shock protein hsp27. First, we evaluated the responses of human cells to microwave exposure at a specific absorption rate (SAR) of 80 mW/kg, which corresponds to the limit of the average whole-body SAR for general public exposure defined as a basic restriction in the International Commission on Non-Ionizing Radiation Protection (ICNIRP) guidelines. Second, we investigated whether continuous wave (CW) and Wideband Code Division Multiple Access (W-CDMA) modulated signal RF fields at 2.1425 GHz induced activation or gene expression of hsp27 and other heat shock proteins (hsps). Human glioblastoma A172 cells were exposed to W-CDMA radiation at SARs of 80 and 800 mW/kg for 2-48 h, and CW radiation at 80 mW/kg for 24 h. Human IMR-90 fibroblasts from fetal lungs were exposed to W-CDMA at 80 and 800 mW/kg for 2 or 28 h, and CW at 80 mW/kg for 28 h. Under the RF field exposure conditions described above, no significant differences in the expression levels of phosphorylated hsp27 at serine 82 (hsp27[pS82]) were observed between the test groups exposed to W-CDMA or CW signal and the sham-exposed negative controls, as evaluated immediately after the exposure periods by bead-based multiplex assays. Moreover, no noticeable differences in the gene expression of hsps were observed between the test groups and the negative controls by DNA Chip analysis. Our results confirm that exposure to low-level RF field up to 800 mW/kg does not induce phosphorylation of hsp27 or expression of hsp gene family.

  3. QUANTUM ELECTRONIC DEVICES: Superconducting Nb3Sn point contact in the submillimeter range of electromagnetic radiation

    Science.gov (United States)

    Belenov, É. M.; Danileĭko, M. V.; Derkach, V. E.; Romanenko, V. I.; Uskov, A. V.

    1988-05-01

    An investigation was made of the influence of submillimeter radiation emitted by an HCN laser operating at a frequency νl = 891 GHz on a superconducting point contact made of Nb3Sn. Three steps of the electric current were recorded. The experimental results indicated that such a contact could be used for frequency multiplication up to 3 THz.

  4. Superconducting (radiation hardened) magnets for mirror fusion devices

    International Nuclear Information System (INIS)

    Henning, C.D.; Dalder, E.N.C.; Miller, J.R.; Perkins, J.R.

    1983-01-01

    Superconducting magnets for mirror fusion have evolved considerably since the Baseball II magnet in 1970. Recently, the Mirror Fusion Test Facility (MFTF-B) yin-yang has been tested to a full field of 7.7 T with radial dimensions representative of a full scale reactor. Now the emphasis has turned to the manufacture of very high field solenoids (choke coils) that are placed between the tandem mirror central cell and the yin-yang anchor-plug set. For MFTF-B the choke coil field reaches 12 T, while in future devices like the MFTF-Upgrade, Fusion Power Demonstration and Mirror Advanced Reactor Study (MARS) reactor the fields are doubled. Besides developing high fields, the magnets must be radiation hardened. Otherwise, thick neutron shields increase the magnet size to an unacceptable weight and cost. Neutron fluences in superconducting magnets must be increased by an order of magnitude or more. Insulators must withstand 10 10 to 10 11 rads, while magnet stability must be retained after the copper has been exposed to fluence above 10 19 neutrons/cm 2

  5. Wideband analysis of railway catenary line radiation and new applications of its unintentional emitted signals

    Science.gov (United States)

    Heddebaut, Marc; Deniau, Virginie; Rioult, Jean

    2018-06-01

    Generally, in railway networks, dissipated energy—and its consequences in terms of noise, ballast attrition, electromagnetic interference, etc—is considered a nuisance generated by this means of transport. Therefore, most studies are carried out with the aim of reducing it. This paper takes the opposite view and considers the particular case of the irreducible electromagnetic interference generated along an electrified line, in order to propose new applications beneficial to railway operations. At a selected representative location, wideband (ranging from 10 kHz to 1 GHz) electromagnetic field measurements are performed successively during, and not during, high speed train passages. We deduce two potential applications of these unintentional signals. At low frequency, the first proposal considers energy harvesting using the received electromagnetic interference as the source. This received energy can be converted and used to DC feed low consumption sensors to be installed along the railway infrastructure. These sensors participate in monitoring infrastructure health and in making it more resilient to internal and external stresses. At higher frequencies, for the second proposal, radiation from the catenary line and train pantograph is specifically examined at a carefully selected sub-band. The results are also studied following a time–frequency analysis, to introduce a new nondestructive inspection method of the sliding contact between the catenary line and the train pantograph. Ultimately, this technique could offer a new means of monitoring the health of both the catenary line and the pantograph.

  6. Irradiation device

    International Nuclear Information System (INIS)

    Suzuki, Toshimitsu.

    1989-01-01

    In an irradiation device for irradiating radiation rays such as electron beams to pharmaceuticals, etc., since the distribution of scanned electron rays was not monitored, the electron beam intensity could be determined only indirectly and irradiation reliability was not satisfactory. In view of the above, a plurality of monitor wires emitting secondary electrons are disposed in the scanning direction near a beam take-out window of a scanning duct, signals from the monitor wires are inputted into a display device such as a cathode ray tube, as well as signals from the monitor wires at the central portion are inputted into counting rate meters to measure the radiation dose as well. Since secondary electrons are emitted when electron beams pass through the monitor wires and the intensity thereof is in proportion with the intensity of incident electron beams, the distribution of the radiation dose can be monitored by measuring the intensity of the emitted secondary electrons. Further, uneven irradiation, etc. can also be monitored to make the radiation of irradiation rays reliable. (N.H.)

  7. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis

    Science.gov (United States)

    Jha, Shrawan Kumar; Luan, Chunyan; To, Chap Hang; Kutsay, Oleksandr; Kováč, Jaroslav; Zapien, Juan Antonio; Bello, Igor; Lee, Shuit-Tong

    2012-11-01

    Pure ultra-violet (UV) (378 nm) electroluminescence (EL) from zinc oxide (ZnO)-nanorod-array/p-gallium nitride (GaN) light emitting devices (LEDs) is demonstrated at low bias-voltages (˜4.3 V). Devices were prepared merely by solution-synthesis, without any involvement of sophisticated material growth techniques or preparation methods. Three different luminescence characterization techniques, i.e., photo-luminescence, cathodo-luminescence, and EL, provided insight into the nature of the UV emission mechanism in solution-synthesized LEDs. Bias dependent EL behaviour revealed blue-shift of EL peaks and increased peak sharpness, with increasing the operating voltage. Accelerated bias stress tests showed very stable and repeatable electrical and EL performance of the solution-synthesized nanorod LEDs.

  8. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    Science.gov (United States)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-12-01

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  9. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)

    2013-12-28

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

  10. Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

    International Nuclear Information System (INIS)

    Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

    2013-01-01

    Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs

  11. Enhanced performance of organic light-emitting devices by using electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) film as the anode modification layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xiaona [Graduate University of Chinese Academy of Sciences, Beijing 100049 (China); Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yan Jun [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Meng Lingchuan [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China); Sun Chenghua; Hu Xiujie; Chen Ping [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Zhou Shuyun, E-mail: zhou_shuyun@mail.ipc.ac.cn [Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Teng Feng [Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 (China)

    2012-01-31

    Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films were prepared by electropolymerization on patterned indium tin oxide substrates in isopropanol solution. The thickness and doping level of the PEDOT:PSS films were controlled by adjusting the electropolymerization time and the concentration of poly(styrene sulfonate) acid, respectively. Organic light-emitting diodes were fabricated using the electropolymerized PEDOT:PSS film as the anode modification layer. The dependence of the performance on thickness of PEDOT:PSS films was investigated. It is shown that the performance of the device can be further enhanced when the thickness of PEDOT:PSS films reached an optimum condition. This method facilitates manufacturing procedures of conducting polymers films and may offer an economical route for producing organic electroluminescent devices.

  12. The effect of electromagnetic radiation emitted by display screens on cell oxygen metabolism – in vitro studies

    Science.gov (United States)

    Henrykowska, Gabriela A.; Pacholski, Krzysztof; Śmigielski, Janusz; Rutkowski, Maciej; Dziedziczak-Buczyńska, Maria; Buczyński, Andrzej

    2015-01-01

    Introduction Research studies carried out for decades have not solved the problem of the effect of electromagnetic radiation of various frequency and strength on the human organism. Due to this fact, we decided to investigate the changes taking place in human blood platelets under the effect of electromagnetic radiation (EMR) emitted by LCD monitors. Material and methods The changes of selected parameters of oxygen metabolism were measured, i.e. reactive oxygen species concentration, enzymatic activity of antioxidant defence proteins – superoxide dismutase (SOD-1) and catalase (CAT) – and malondialdehyde concentration (MDA). A suspension of human blood platelets was exposed to electromagnetic radiation of 1 kHz frequency and 150 V/m and 220 V/m intensity for 30 and 60 min. The level of changes of the selected parameters of oxidative stress was determined after the exposure and compared to the control samples (not exposed). Results The measurements revealed an increase of the concentration of reactive oxygen species. The largest increase of ROS concentration vs. the control sample was observed after exposure to EMF of 220 V/m intensity for 60 min (from x = 54.64 to x = 72.92). The measurement of MDA concentration demonstrated a statistically significant increase after 30-min exposure to an EMF of 220 V/m intensity in relation to the initial values (from x = 3.18 to x = 4.41). The enzymatic activity of SOD-1 decreased after exposure (the most prominent change was observed after 60-min and 220 V/m intensity from x = 3556.41 to x = 1084.83). The most significant change in activity of catalase was observed after 60 min and 220 v/m exposure (from x = 6.28 to x = 4.15). Conclusions The findings indicate that exposure to electromagnetic radiation of 1 kHz frequency and 150 V/m and 220 V/m intensity may cause adverse effects within blood platelets’ oxygen metabolism and thus may lead to physiological dysfunction of the organism. PMID:26788099

  13. Hybrid white organic light-emitting devices consisting of a non-doped thermally activated delayed fluorescent emitter and an ultrathin phosphorescent emitter

    International Nuclear Information System (INIS)

    Zhao, Juan; Wang, Zijun; Wang, Run; Chi, Zhenguo; Yu, Junsheng

    2017-01-01

    Hybrid white organic light-emitting devices (OLEDs) are fabricated by employing non-doped emitting layers (EMLs), which are consisted of a blue thermally activated delayed fluorescent (TADF) emitter 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone (DMAC-DPS) and an ultrathin yellow iridium complex bis[2-(4-tertbutylphenyl)benzothiazolato-N,C 2′ ] iridium (acetylacetonate) [(tbt) 2 Ir(acac)]. With thickness optimization of DMAC-DPS, a white OLED achieves maximum current efficiency, power efficiency and external quantum efficiency of 34.9 cd/A, 29.2 lm/W and 11.4%, respectively, as well as warm white emission with relatively stable electroluminescence spectra. The results suggest that, bipolar charge carrier transport property and concentration independent property of DMAC-DPS, charge carrier trapping effect of the ultrathin (tbt) 2 Ir(acac), and balanced self-emission process and energy transfer process between DMAC-DPS and (tbt) 2 Ir(acac), contribute to high device performance.

  14. Hybrid white organic light-emitting devices consisting of a non-doped thermally activated delayed fluorescent emitter and an ultrathin phosphorescent emitter

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Juan [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Zijun; Wang, Run [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chi, Zhenguo, E-mail: chizhg@mail.sysu.edu.cn [School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2017-04-15

    Hybrid white organic light-emitting devices (OLEDs) are fabricated by employing non-doped emitting layers (EMLs), which are consisted of a blue thermally activated delayed fluorescent (TADF) emitter 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone (DMAC-DPS) and an ultrathin yellow iridium complex bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2′}] iridium (acetylacetonate) [(tbt){sub 2}Ir(acac)]. With thickness optimization of DMAC-DPS, a white OLED achieves maximum current efficiency, power efficiency and external quantum efficiency of 34.9 cd/A, 29.2 lm/W and 11.4%, respectively, as well as warm white emission with relatively stable electroluminescence spectra. The results suggest that, bipolar charge carrier transport property and concentration independent property of DMAC-DPS, charge carrier trapping effect of the ultrathin (tbt){sub 2}Ir(acac), and balanced self-emission process and energy transfer process between DMAC-DPS and (tbt){sub 2}Ir(acac), contribute to high device performance.

  15. Origin of the low frequency radiation emitted by radiative polaritons excited by infrared radiation in planar La2O3 films.

    Science.gov (United States)

    Vincent-Johnson, Anita J; Schwab, Yosyp; Mann, Harkirat S; Francoeur, Mathieu; Hammonds, James S; Scarel, Giovanna

    2013-01-23

    Upon excitation in thin oxide films by infrared radiation, radiative polaritons are formed with complex angular frequency ω, according to the theory of Kliewer and Fuchs (1966 Phys. Rev. 150 573). We show that radiative polaritons leak radiation with frequency ω(i) to the space surrounding the oxide film. The frequency ω(i) is the imaginary part of ω. The effects of the presence of the radiation leaked out at frequency ω(i) are observed experimentally and numerically in the infrared spectra of La(2)O(3) films on silicon upon excitation by infrared radiation of the 0TH type radiative polariton. The frequency ω(i) is found in the microwave to far infrared region, and depends on the oxide film chemistry and thickness. The presented results might aid in the interpretation of fine structures in infrared and, possibly, optical spectra, and suggest the study of other similar potential sources of electromagnetic radiation in different physical scenarios.

  16. Development of Radiation-Resistant In-Water Wireless Transmission System Using Light Emitting Diodes and Photo Diodes

    Science.gov (United States)

    Takeuchi, T.; Shibata, H.; Otsuka, N.; Uehara, T.; Tsuchiya, K.; Shibagaki, T.; Komanome, H.

    2016-10-01

    Several kinds of commercially available light emitting diodes (LED) and photo diodes (PD) were irradiated with 60Co gamma ray up to 1 MGy for development of a radiation-resistant in-water wireless transmission system using visible light. The lens parts of the LEDs turned brown by the irradiation and their colors became dark with the absorbed dose. The total luminous fluxes decreased with the absorbed dose and the LED with shorter emission wavelength had the higher decrease rate. Meanwhile, the current-voltage characteristics hardly changed. These results indicate that the decreases of the total luminous flux of the LEDs were mainly caused not by the degradation of the semiconductor parts but by the coloring of the lens parts by the irradiation. On the other hand, the light sensitivities of the PDs decreased with the absorbed dose. The PDs with the window part which turned a darker color had the higher decrease rate. These results indicate that the decreases of light sensitivities of the PDs were also mainly caused by the coloring of the resin parts by the irradiation. If the wireless transmission is performed using the candidate LED and PD between 5 meters in water, using a few LEDs and PDs, the PD's output current generated by the emission light of the LED is estimated to be detectable even considering the effects of the absorption of the light in water and the increased dark current by the irradiation. Therefore, a radiation resistant in-water transmission system can be constructed using commercially available LEDs and PDs in principle.

  17. Efficient Computation of Coherent Synchrotron Radiation Taking into Account 6D Phase Space Distribution of Emitting Electrons

    International Nuclear Information System (INIS)

    Chubar, O.; Couprie, M.-E.

    2007-01-01

    CPU-efficient method for calculation of the frequency domain electric field of Coherent Synchrotron Radiation (CSR) taking into account 6D phase space distribution of electrons in a bunch is proposed. As an application example, calculation results of the CSR emitted by an electron bunch with small longitudinal and large transverse sizes are presented. Such situation can be realized in storage rings or ERLs by transverse deflection of the electron bunches in special crab-type RF cavities, i.e. using the technique proposed for the generation of femtosecond X-ray pulses (A. Zholents et. al., 1999). The computation, performed for the parameters of the SOLEIL storage ring, shows that if the transverse size of electron bunch is larger than the diffraction limit for single-electron SR at a given wavelength -- this affects the angular distribution of the CSR at this wavelength and reduces the coherent flux. Nevertheless, for transverse bunch dimensions up to several millimeters and a longitudinal bunch size smaller than hundred micrometers, the resulting CSR flux in the far infrared spectral range is still many orders of magnitude higher than the flux of incoherent SR, and therefore can be considered for practical use

  18. Eye safety related to near infrared radiation exposure to biometric devices.

    Science.gov (United States)

    Kourkoumelis, Nikolaos; Tzaphlidou, Margaret

    2011-03-01

    Biometrics has become an emerging field of technology due to its intrinsic security features concerning the identification of individuals by means of measurable biological characteristics. Two of the most promising biometric modalities are iris and retina recognition, which primarily use nonionizing radiation in the infrared region. Illumination of the eye is achieved by infrared light emitting diodes (LEDs). Even if few LED sources are capable of causing direct eye damage as they emit incoherent light, there is a growing concern about the possible use of LED arrays that might pose a potential threat. Exposure to intense coherent infrared radiation has been proven to have significant effects on living tissues. The purpose of this study is to explore the biological effects arising from exposing the eye to near infrared radiation with reference to international legislation.

  19. Recent developments in white light emitting diodes

    Science.gov (United States)

    Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

    2018-05-01

    In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

  20. Device for imaging an object by means of masks of spatially modulable electromagnetic radiation or corpuscular radiation of high energy

    International Nuclear Information System (INIS)

    Barrett, H.H.

    1979-01-01

    The radiogram of the thyroid is produced by means of a detector device operating similar to a scintillation camera. Between thyroid and detector device there is placed a mask having modulating areas, permeable and impermeable to radiation succeeding each other with decreasing extension. The scanning signal has got the shape of a radar signal with chirp modulation. The filtering unit used for it is a pulse compression filter. The image of the radiation energy distribution on the recording surface of the detector device is thus decoded and compressed to a number of image points giving the picture of the thyroid. (RW) [de

  1. The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

    International Nuclear Information System (INIS)

    Lin Jian; Xia, Yi-Jie; Tang Chao; Yin Kun; Zhong Gaoyu; Ni Gang; Peng Bo; Hou Xiaoyuan; Gan Fuxi; Huang Wei

    2007-01-01

    This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq 3 : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq 3 = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field

  2. The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Lin Jian [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Xia, Yi-Jie [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Tang Chao [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China); Yin Kun [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhong Gaoyu [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Ni Gang [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Peng Bo [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou Xiaoyuan [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Gan Fuxi [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Huang Wei [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China)

    2007-08-07

    This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq{sub 3} : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq{sub 3} = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field.

  3. NEW Fe IX LINE IDENTIFICATIONS USING SOLAR AND HELIOSPHERIC OBSERVATORY/SOLAR ULTRAVIOLET MEASUREMENT OF EMITTED RADIATION AND HINODE/EIS JOINT OBSERVATIONS OF THE QUIET SUN

    International Nuclear Information System (INIS)

    Landi, E.; Young, P. R.

    2009-01-01

    In this work, we study joint observations of Hinode/EUV Imaging Spectrometer (EIS) and Solar and Heliospheric Observatory/Solar Ultraviolet Measurement of Emitted Radiation of Fe IX lines emitted by the same level of the high energy configuration 3s 2 3p 5 4p. The intensity ratios of these lines are dependent on atomic physics parameters only and not on the physical parameters of the emitting plasma, so that they are excellent tools to verify the relative intensity calibration of high-resolution spectrometers that work in the 170-200 A and 700-850 A wavelength ranges. We carry out extensive atomic physics calculations to improve the accuracy of the predicted intensity ratio, and compare the results with simultaneous EIS-SUMER observations of an off-disk quiet Sun region. We were able to identify two ultraviolet lines in the SUMER spectrum that are emitted by the same level that emits one bright line in the EIS wavelength range. Comparison between predicted and measured intensity ratios, wavelengths and energy separation of Fe IX levels confirms the identifications we make. Blending and calibration uncertainties are discussed. The results of this work are important for cross-calibrating EIS and SUMER, as well as future instrumentation.

  4. Smart design to resolve spectral overlapping of phosphor-in-glass for high-powered remote-type white light-emitting devices.

    Science.gov (United States)

    Lee, Jin Seok; Arunkumar, P; Kim, Sunghoon; Lee, In Jae; Lee, Hyungeui; Im, Won Bin

    2014-02-15

    The white light-emitting diode (WLED) is a state-of-the-art solid state technology, which has replaced conventional lighting systems due to its reduced energy consumption, its reliability, and long life. However, the WLED presents acute challenges in device engineering, due to its lack of color purity, efficacy, and thermal stability of the lighting devices. The prime cause for inadequacies in color purity and luminous efficiency is the spectral overlapping of red components with yellow/green emissions when generating white light by pumping a blue InGaN chip with yellow YAG:Ce³⁺ phosphor, where red phosphor is included, to compensate for deficiencies in the red region. An innovative strategy was formulated to resolve this spectral overlapping by alternatively arranging phosphor-in-glass (PiG) through cutting and reassembling the commercial red CaAlSiN₃:Eu²⁺ and green Lu₃Al₅O₁₂:Ce³⁺ PiG. PiGs were fabricated using glass frits with a low softening temperature of 600°C, which exhibited excellent thermal stability and high transparency, improving life time even at an operating temperature of 200°C. This strategy overcomes the spectral overlapping issue more efficiently than the randomly mixed and patented stacking design of multiple phosphors for a remote-type WLED. The protocol for the current design of PiG possesses excellent thermal and chemical stability with high luminous efficiency and color purity is an attempt to make smarter solid state lighting for high-powered remote-type white light-emitting devices.

  5. Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

    International Nuclear Information System (INIS)

    Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

    2017-01-01

    Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A −1 , 81.22 lm W −1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m −2 to 10 000 cd m −2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density–voltage ( J – V ) characteristics of the electron-only devices. In particular, by comparing the J – V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m −2 to 10870 cd m −2 , as is beneficial to the lighting application. (paper)

  6. Hardening device, by inserts, of electronic component against radiation

    International Nuclear Information System (INIS)

    Val, C.

    1987-01-01

    The hardening device includes at least two materials, one with high atomic number with respect to the other. One of these materials is set as inserts in a layer of the other material. The hardening device is then made by stacking of such layers, the insert density varying from one layer to the other, making thus vary the atomic number resulting from the hardening device along its thickness, following a predefined law [fr

  7. Device for contamination monitoring against radiation contamination of people

    International Nuclear Information System (INIS)

    Rische, U.W.; Gerlach, R.

    1986-01-01

    The monitor has detector devices at an angle to each other made as a rigid component which can be rotated around a vertical axis in the angle between the joined detector devices. A reset drive which can be tensioned is provided at the axis of rotation. If it is in its rest position, a platform is situated as floor plate with a foot detector between the vertical detector devices. (orig./HP) [de

  8. New small devices for radiation detection: the Wee Pocket Chirper and the Portable Multichannel Analyzer

    International Nuclear Information System (INIS)

    Umbarger, C.J.

    1980-08-01

    Recent events have demonstrated the need for improved capability to monitor the exposure of workers to radiation and, in general, to identify and measure the many forms of radioactive materials found throughout the nuclear industry. Two radiation monitoring devices have been developed that are much smaller than existing instruments, yet exhibit superior performance and a longer battery life. The first instrument, the Wee Pocket Chirper, is a tiny, battery-powered warning device that chirps when exposed to radiation. The second instrument is a portable battery-powered, computer-based, multichannel analyzer that allows the user to examine radiation fields and to identify the types and amounts of radioactive materials present

  9. Radiation as a microbiological contamination control of drugs, cosmetics and medical devices

    International Nuclear Information System (INIS)

    Ishizeki, Chuichi

    1985-01-01

    This paper deals with current status of radiation sterilization or disinfection of drugs, cosmetics, their materials, and medical devices, and with quality control as a tool for securing microbiological safety, especially current status of sterilization tests. Ointment containing tetracyclin, steroid hormones, gelatin, and enzymes are presented as drug samples to be irradiated, and explanations for radiation sterilization of these drugs are provided. An outline of the application of radiation in cosmetics and medical devices is given. Issues are also provided from the viewpoint of safey and effectiveness of radiation sterilization. (Namekawa, K.)

  10. SINGLE-FACED GRAYQB{trademark} - A RADIATION MAPPING DEVICE

    Energy Technology Data Exchange (ETDEWEB)

    Mayer, J.; Farfan, E.; Immel, D.; Phillips, M.; Bobbitt, J.; Plummer, J.

    2013-12-12

    GrayQb{trademark} is a novel technology that has the potential to characterize radioactively contaminated areas such as hot cells, gloveboxes, small and large rooms, hallways, and waste tanks. The goal of GrayQb{trademark} is to speed the process of decontaminating these areas, which reduces worker exposures and promotes ALARA considerations. The device employs Phosphorous Storage Plate (PSP) technology as its primary detector material. PSPs, commonly used for medical applications and non-destructive testing, can be read using a commercially available scanner. The goal of GrayQb{trademark} technology is to locate, quantify, and identify the sources of contamination. The purpose of the work documented in this report was to better characterize the performance of GrayQb{trademark} in its ability to present overlay images of the PSP image and the associated visual image of the location being surveyed. The results presented in this report are overlay images identifying the location of hot spots in both controlled and field environments. The GrayQb{trademark} technology has been mainly tested in a controlled environment with known distances and source characteristics such as specific known radionuclides, dose rates, and strength. The original concept for the GrayQb{trademark} device involved utilizing the six faces of a cube configuration and was designed to be positioned in the center of a contaminated area for 3D mapping. A smaller single-faced GrayQb{trademark}, dubbed GrayQb SF, was designed for the purpose of conducting the characterization testing documented in this report. This lighter 2D version is ideal for applications where entry ports are too small for a deployment of the original GrayQb™ version or where only a single surface is of interest. The shape, size, and weight of these two designs have been carefully modeled to account for most limitations encountered in hot cells, gloveboxes, and contaminated areas. GrayQb{trademark} and GrayQb{trademark} SF

  11. Basic mechanisms of radiation effects on electronic materials and devices

    International Nuclear Information System (INIS)

    Winokur, P.S.

    1989-01-01

    Many defense and nuclear reactor systems require complementary metal-oxide semiconductor integrated circuits that are tolerant to high levels of radiation. This radiation can result from space, hostile environments or nuclear reactor and accelerator beam environments. In addition, many techniques used to fabricate today's complex very-large-scale integration circuits expose the circuits to ionizing radiation during the process sequence. Whatever its origin, radiation can cause significant damage to integrated-circuit materials. This damage can lead to circuit performance degradation, logic upset, and even catastrophic circuit failure. This paper provides a brief overview of the basic mechanisms for radiation damage to silicon-based integrated circuits. Primary emphasis is on the effects of total-dose ionizing radiation on metal-oxide-semiconductor (MOS) structures

  12. Particle interaction and displacement damage in silicon devices operated in radiation environments

    International Nuclear Information System (INIS)

    Leroy, Claude; Rancoita, Pier-Giorgio

    2007-01-01

    Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest

  13. Disposal regulations and techniques applicable to devices using ionising radiation

    International Nuclear Information System (INIS)

    Vidal, J.P.

    1998-01-01

    L'office de Protection contre les rayonnement ionisants, being a government body under the supervision of Ministry of Health and Labour, among other different missions controls the compliance of radiation protection laws with the aim to guarantee the safe operation of equipment using ionising radiation sources. These regulations concerning competence of personnel, especially in the field of medicine or application of ionising radiation on humans, are restricted only to medical doctors (or dentists in their domain) by technical constraints dealing with design of equipment and its exploitation. At the same time regulations define conditions of permanent control in order to verify compliance of radiation protection laws

  14. Change of the dominant luminescent mechanism with increasing current density in molecularly doped organic light-emitting devices

    International Nuclear Information System (INIS)

    Zhou Liang; Zhang Hongjie; Meng Qingguo; Liu Fengyi; Yu Jiangbo; Deng Ruiping; Peng Zeping; Li Zhefeng; Guo Zhiyong

    2007-01-01

    We have fabricated and measured a series of electroluminescent devices with the structure of ITO/TPD/Eu(TTA) 3 phen (x):CBP/BCP/ALQ/LiF/Al, where x is the weight percentage of Eu(TTA) 3 phen (from 0% to 6%). At very low current density, carrier trapping is the dominant luminescent mechanism and the 4% doped device shows the highest electroluminescence (EL) efficiency among all these devices. With increasing current density, Foerster energy transfer participates in EL process. At the current density of 10.0 and 80.0 mA/cm 2 , 2% and 3% doped devices show the highest EL efficiency, respectively. From analysis of the EL spectra and the EL efficiency-current density characteristics, we found that the EL efficiency is manipulated by Foerster energy transfer efficiency at high current density. So we suggest that the dominant luminescent mechanism changes gradually from carrier trapping to Foerster energy transfer with increasing current density. Moreover, the conversion of dominant EL mechanism was suspected to be partly responsible for the EL efficiency roll-off because of the lower EL quantum efficiency of Foerster energy transfer compared with carrier trapping

  15. Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

    International Nuclear Information System (INIS)

    Gayduchenko, I.; Kardakova, A.; Voronov, B.; Finkel, M.; Fedorov, G.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.

    2015-01-01

    Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors

  16. A survey of synchrotron radiation devices producing circular or variable polarization

    International Nuclear Information System (INIS)

    Kim, K.J.

    1990-01-01

    This paper reviews the properties and operating principles of the new types of synchrotron radiation devices that produce circular polarization, or polarization that can be modulated in arbitrary fashion

  17. New device for the radiation protection of the eye lens

    International Nuclear Information System (INIS)

    Csobaly, S.; Zarand, P.

    1980-01-01

    Lenses of 50 mm diameter and 2 mm width were ground from lead glass, equivalent to 2 mm of lead. In the case of X-radiations of different intensity and different filtering the finished glasses are equivalent to 0.73-0.78 mm of lead and they decrease the radiation exposition of the eye lens 15-fold. (L.E.)

  18. Studies on the radiation resistances of bioburden for medical devices

    International Nuclear Information System (INIS)

    Sekiguchi, Masayuki; Tabei, Masae

    1997-01-01

    Radiation resistances of reference bacteria strains and the bioburden obtained from hypodermic needles were estimated with gamma- and electron- irradiators calibrated with NPL (National Physics Laboratory) alanine dosimeter. Radiation resistances of the TSB-bacteria suspension samples dried on glass test tubes showed about two times higher than those of the water-bacteria suspension dried on glass fiber paper or paper filter. Radiation resistances of the dried TSB-bacteria suspension samples irradiated by both gamma rays and electron beams were fluctuated. The overall increase ratio of radiation resistance was estimated by dividing D-values of TSB-bacteria suspension samples by that of water-bacteria suspension samples for individual bacteria. Then, the survival curve of hypodermic needle bioburden revised by the increase ratio was obtained, and which compared with that of standard distribution of radiation resistances of ISO(SDR). (author)

  19. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-11-03

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved.

  20. Luminescence mechanisms of organic/inorganic hybrid organic light-emitting devices fabricated utilizing a Zn2SiO4:Mn color-conversion layer

    International Nuclear Information System (INIS)

    Choo, D.C.; Ahn, S.D.; Jung, H.S.; Kim, T.W.; Lee, J.Y.; Park, J.H.; Kwon, M.S.

    2010-01-01

    Zn 2 SiO 4 :Mn phosphor layers used in this study were synthesized by using the sol-gel method and printed on the glass substrates by using a vehicle solution and a heating process. Organic/inorganic hybrid organic light-emitting devices (OLEDs) utilizing a Zn 2 SiO 4 :Mn color-conversion layer were fabricated. X-ray diffraction data for the synthesized Zn 2 SiO 4 :Mn phosphor films showed that the Zn ions in the phosphor were substituted into Mn ions. The electroluminescence (EL) spectrum of the deep blue OLEDs showed that a dominant peak at 461 nm appeared. The photoluminescence spectrum for the Zn 2 SiO 4 :Mn phosphor layer by using a 470 nm excitation source showed that a dominant peak at 527 nm appeared, which originated from the 4 T 1 - 6 A 1 transitions of Mn ions. The appearance of the peak around 527 nm of the EL spectra for the OLEDs fabricated utilizing a Zn 2 SiO 4 :Mn phosphor layer demonstrated that the emitted blue color from the deep blue OLEDs was converted into a green color due to the existence of the color-conversion layer. The luminescence mechanisms of organic/inorganic hybrid OLEDs fabricated utilizing a Zn 2 SiO 4 :Mn color-conversion layer are described on the basis of the EL and PL spectra.

  1. Efficiency enhancement of tandem organic light-emitting devices by a combined charge generation layer and organic n-type bis(ethylenedithio)-tetrathiafulvalene-doped electron transport layer

    International Nuclear Information System (INIS)

    Cho, Jin Taek; Kim, Dae Hun; Koh, Eun Im; Kim, Tae Whan

    2014-01-01

    While the operating voltage of the tandem organic light-emitting devices (OLEDs) with both an organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile charge generation layer and a bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF)-doped 1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene (TPBi) electron transport layer (ETL) was 1.3 V lower than that of the tandem OLEDs with a BEDT-TTF-undoped TPBi ETL. Luminance efficiency of the tandem OLEDs with a BEDT-TTF-doped TPBi ETL was 3.6 cd/A higher than that of the typical OLEDs. The increase in the luminance efficiency and the decrease in the operating voltage of the tandem OLEDs were attributed to improved electron injection due to the insertion of the BEDT-TTF-doped TPBi ETL. - Highlights: • Tandem organic light-emitting diodes (OLED) were fabricated. • OLED fabricated with an n-type bis(ethylenedithio)-tetrathiafulvalene. • Operating voltage of the tandem OLED was decreased from 19.8 to 18.5 V. • Luminance efficiency of the tandem OLED was increased from 31.8 to 35.4 cd/A. • Enhancement of the luminance efficiency in the tandem OLED was achieved

  2. Highly efficient and concentration-insensitive organic light-emitting devices based on self-quenching-resistant orange–red iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yige; Wang, Xu [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-11-15

    Orange–red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N,C{sup 2}′]iridium(III) (acetylacetonate) [(4Phbt){sub 2}Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4′-N,N′-dicarbazolylbiphenyl (CBP): (4Phbt){sub 2}Ir(acac) in a wide and easily controlled dopant concentration range from 12 wt% to 24 wt%, a maximum power efficiency of 29 lm/W and an external quantum efficiency of >16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0 lm/W was achieved from a non-doped device with neat (4Phbt){sub 2}Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet–triplet annihilation and superior EL performance. - Highlights: • Highly efficient and concentration-insensitive PHOLEDs were obtained. • The high efficiency of non-doped PHOLEDs indicated a quenching-resistant property. • The independence of EL spectra on doping concentration was observed. • The heavily doped devices were dominated by mechanism of direct exciton formation.

  3. Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation

    Science.gov (United States)

    López-Vidrier, J.; Gutsch, S.; Blázquez, O.; Hiller, D.; Laube, J.; Kaur, R.; Hernández, S.; Garrido, B.; Zacharias, M.

    2017-05-01

    In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to the observed EL. Symmetric square voltage pulses (50-μs period) were found to notably enhance EL emission by about one order of magnitude. In addition, the control of the pulse parameters (accumulation and inversion times) was found to modify the emission lineshape, long inversion times (i.e., short accumulation times) suppressing ZnO defects contribution. The EL results were discussed in terms of the recombination dynamics taking place within the ZnO/Si NCs heterostructure, suggesting the excitation mechanism of the luminescent centers via a combination of electron impact, bipolar injection, and sequential carrier injection within their respective conduction regimes.

  4. Improved organic light-emitting device with tris-(8-hydroxyquinoline) aluminium inserted between hole-injection layer and hole-transporting layer

    Energy Technology Data Exchange (ETDEWEB)

    Divayana, Y [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sun, X W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Chen, B J [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore (Singapore); Sarma, K R [Aerospace Electronic Systems, Honeywell, 21111 N 19th Avenue, Phoenix, AZ 85027 (United States)

    2007-01-07

    A layer of tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}), which is normally used as an electron-transporting and emissive layer, was incorporated between the hole-transporting layer and the hole-injection layer to balance the electron-hole injection. The Alq{sub 3} layer performed to block the hole current which is a majority carrier in a typical organic light-emitting device. An increase in current efficiency by almost 30%, from 3.1 to 4.0 cd A{sup -1}, with a minimum voltage shift was achieved with a 2 nm Alq{sub 3} layer as a hole-blocking layer. A reduction in HTL thickness was observed to reduce the efficiency due to electron leakage to the HIL, whereby an inefficient exciplex emission was observed.

  5. Effect of automated ultraviolet C-emitting device on decontamination of hospital rooms with and without real-time observation of terminal room disinfection.

    Science.gov (United States)

    Penno, Katie; Jandarov, Roman A; Sopirala, Madhuri M

    2017-11-01

    We studied the effectiveness of an ultraviolet C (UV-C) emitter in clinical settings and compared it with observed terminal disinfection. We cultured 22 hospital discharge rooms at a tertiary care academic medical center. Phase 1 (unobserved terminal disinfection) included cultures of 11 high-touch environmental surfaces (HTSs) after terminal room disinfection (AD) and after the use of a UV-C-emitting device (AUV). Phase 2 (observed terminal disinfection) included cultures before terminal room disinfection (BD), AD, and AUV. Zero-inflated Poisson regression compared mean colony forming units (CFU) between the groups. Two-sample proportion tests identified significance of the observed differences in proportions of thoroughly cleaned HTSs (CFU cleaning significantly reduced microbial burden and improved the thoroughness of terminal disinfection. We found no further benefit to UV-C use if standard terminal disinfection was observed. Copyright © 2017 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

  6. Ordered conducting polymer multilayer films and its application for hole injection layers in organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Jianhua; Yang Yajie; Yu Junsheng; Jiang Yadong

    2009-01-01

    We reported a controlled architecture growth of layer-ordered multilayer film of poly(3,4-ethylene dioxythiophene) (PEDOT) via a modified Langmuir-Blodgett (LB) method. An in situ polymerization of 3,4-ethylene dioxythiophene (EDOT) monomer in multilayer LB film occurred for the formation of ordered conducting polymer embedded multilayer film. The well-distribution of conducting polymer particles was characterized by secondary-ion mass spectrometry (SIMS). The conducting film consisting of ordered PEDOT ultrathin layers was investigated as a hole injection layer for organic light-emitting diodes (OLEDs). The results showed that, compared to conventional spin-coating PEDOT film and electrostatic self-assembly (ESA) film, the improved performance of OLEDs was obtained after using ordered PEDOT LB film as hole injection layer. It also indicated that well-ordered structure of hole injection layer was attributed to the improvement of OLED performance, leading to the increase of charged carrier mobility in hole injection layer and the recombination rate of electrons and holes in the electroluminescent layer.

  7. New cyclometalated Iridium(III) beta-dicetone complex as phosphorescent dopant in Organic light emitting devices

    Science.gov (United States)

    Ivanov, P.; Petrova, P.; Stanimirov, S.; Tomova, R.

    2017-01-01

    A new Bis[4-(benzothiazolato-N,C2‧-2-yl)-N,N-dimethylaniline]Iridium(III) acetylacetonate (Me2N-bt) 2Ir(acac) was synthesized and identified by 1H NMR and elemental analysis. The application of the new compound as a dopant in the hole transporting layer (HTL) of Organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was N,N’-bis(3-methylphenyl)-N,N’-diphenylbenzidine (TPD), incorporated in Poly(N-vinylcarbazole) (PVK) matrix, EL - electroluminescent layer of Bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy)aluminum (BAlq) and ETL - electron-transporting layer of Tris-(8-hydroxyquinoline) aluminum (Alq3) or Bis[2-(2-benzothiazoly) phenolato]zinc (Zn(btz)2). We established that the electroluminescent spectra of OLEDs at different concentrations of the dopant were basically the sum of the greenish-blue emission of BAlq and yellowish-green emission of Ir complex. It was found that with increasing of the dopant concentration the relative electroluminescent intensity of Iridium complex emission increased and this of BAlq decreased and as a result the fine tuning of OLED color was observed.

  8. A review on organic spintronic materials and devices: I. Magnetic field effect on organic light emitting diodes

    Directory of Open Access Journals (Sweden)

    Rugang Geng

    2016-06-01

    Full Text Available Organic spintronics is an emerging and potential platform for future electronics and display due to the intriguing properties of organic semiconductors (OSCs. For the past decade, studies have focused on three types of organic spintronic phenomena: (i magnetic field effect (MFE in organic light emitting diodes (OLEDs, where spin mixing between singlet and triplet polaron pairs (PP can be influenced by an external magnetic field leading to organic magnetoresistive effect (OMAR; (ii magnetoresistance (MR in organic spin valves (OSVs, where spin injection, transport, manipulation, and detection have been demonstrated; and (iii magnetoelectroluminescence (MEL bipolar OSVs or spin-OLEDs, where spin polarized electrons and holes are simultaneously injected into the OSC layer, leading to the dependence of electroluminescence intensity on relative magnetization of the electrodes. In this first of two review papers, we present major experimental results on OMAR studies and current understanding of OMAR using several spin dependent processes in organic semiconductors. During the discussion, we highlight some of the outstanding challenges in this promising research field. Finally, we provide an outlook on the future of organic spintronics.

  9. Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

    International Nuclear Information System (INIS)

    De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

    2010-01-01

    MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

  10. High-performance hybrid white organic light-emitting devices without interlayer between fluorescent and phosphorescent emissive regions.

    Science.gov (United States)

    Sun, Ning; Wang, Qi; Zhao, Yongbiao; Chen, Yonghua; Yang, Dezhi; Zhao, Fangchao; Chen, Jiangshan; Ma, Dongge

    2014-03-12

    By using mixed hosts with bipolar transport properties for blue emissive layers, a novel phosphorescence/fluorescence hybrid white OLED without using an interlayer between the fluorescent and phosphorescent regions is demonstrated. The peak EQE of the device is 19.0% and remains as high as 17.0% at the practical brightness of 1000 cd m(-2) . © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. An analysis of radiation effects on electronics and soi-mos devices as an alternative

    International Nuclear Information System (INIS)

    Ikraiam, F. A.

    2013-01-01

    The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

  12. Radiation from ingested wireless devices in bio-medical telemetry bands

    OpenAIRE

    Chirwa, L.C.; Roy, S.; Cumming, D.R.S.

    2003-01-01

    The performance of wireless devices, using electrically small antennae, in the human intestine is investigated using the finite difference time domain method in recommended biomedical device telemetry bands. The radiation field intensity was found to depend on position but more strongly on frequency, with a transmission peak at 650 MHz.

  13. Top emitting white OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

    2009-07-01

    Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

  14. Characterization of Radiation Hardened Bipolar Linear Devices for High Total Dose Missions

    Science.gov (United States)

    McClure, Steven S.; Harris, Richard D.; Rax, Bernard G.; Thorbourn, Dennis O.

    2012-01-01

    Radiation hardened linear devices are characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased conditions is compared and the impact to hardness assurance methodology is discussed.

  15. Risk evaluation of medical and industrial radiation devices

    International Nuclear Information System (INIS)

    Jones, E.D.; Cunningham, R.E.; Rathbun, P.A.

    1994-03-01

    In 1991, the NRC, Division of Industrial and Medical Nuclear Safety, began a program to evaluate the use of probabilistic risk assessment (PRA) in regulating medical devices. This program represents an initial step in an overall plant to evaluate the use of PRA in regulating the use of nuclear by-product materials. The NRC envisioned that the use of risk analysis techniques could assist staff in ensuring that the regulatory approach was standardized, understandable, and effective. Traditional methods of assessing risk in nuclear power plants may be inappropriate to use in assessing the use of by-product devices. The approaches used in assessing nuclear reactor risks are equipment-oriented. Secondary attention is paid to the human component, for the most part after critical system failure events have been identified. This paper describes the risk methodology developed by Lawrence Livermore National Laboratory (LLNL), initially intended to assess risks associated with the use of the Gamma Knife, a gamma stereotactic radiosurgical device. For relatively new medical devices such as the Gamma Knife, the challenge is to perform a risk analysis with very little quantitative data but with an important human factor component. The method described below provides a basic approach for identifying the most likely risk contributors and evaluating their relative importance. The risk analysis approach developed for the Gamma Knife and described in this paper should be applicable to a broader class of devices in which the human interaction with the device is a prominent factor. In this sense, the method could be a prototypical model of nuclear medical or industrial device risk analysis

  16. Radiation effects and soft errors in integrated circuits and electronic devices

    CERN Document Server

    Fleetwood, D M

    2004-01-01

    This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

  17. Radiation Testing, Characterization and Qualification Challenges for Modern Microelectronics and Photonics Devices and Technologies

    Science.gov (United States)

    LaBel, Kenneth A.; Cohn, Lewis M.

    2008-01-01

    At GOMAC 2007, we discussed a selection of the challenges for radiation testing of modern semiconductor devices focusing on state-of-the-art memory technologies. This included FLASH non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs). In this presentation, we extend this discussion in device packaging and complexity as well as single event upset (SEU) mechanisms using several technology areas as examples including: system-on-a-chip (SOC) devices and photonic or fiber optic systems. The underlying goal is intended to provoke thought for understanding the limitations and interpretation of radiation testing results.

  18. Transient photoconductive gain in a-Si:H devices and its applications in radiation detection

    International Nuclear Information System (INIS)

    Lee, H.K.; Suh, T.S.; Choe, B.Y.; Shinn, K.S.; Perez-Mendez, V.

    1997-01-01

    Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si:H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark-current density. (orig.)

  19. Effect of inserted metal at anode tip on formation of pulsed X-ray emitting zone of plasma focus device

    Science.gov (United States)

    Miremad, Seyed Milad; Shirani Bidabadi, Babak

    2018-04-01

    The effect of the anode's insert material of a plasma focus device on the properties of X-ray emission zone was studied. Inserts were fabricated out of six different materials including aluminum, copper, zinc, tin, tungsten, and lead to cover a wide range of atomic numbers. For each anode's insert material at different gas pressures and different voltages, the shape of X-ray emission zone was recorded by three pinhole cameras, which were installed on sidewall and roof of the chamber of plasma focus device. The results indicated that by changing the gas pressure and the charge voltage of capacitor, the X-ray source of plasma focus emerges with different forms as a concentrated column or conical shape with sharp or cloudy edges. These structures are in the form of a combination of plasma emission and anode-tip emission with different intensities. These observations indicate that the material of the anode-tip especially affects the structure of X-ray emission zone.

  20. Emergency response activities and collecting damaged radiation devices from a war affected area in Croatia

    International Nuclear Information System (INIS)

    Subasic, Damir; Schaller, Antum

    1997-01-01

    A number of various devices containing ionizing radiation sources were in use in the area affected by the recent war in Croatia. In destruction caused by the war operations, a number of these devices were damaged, destroyed or even missed/lost. The actions undertaken to (re)collect these radiation sources, experience gained and lessons learned are reviewed. The importance of a well-organized national regulatory system is highlighted as a precondition for the efficient identification and safe collection of radiation sources which were under ruins. Experience from this event could be well applicable to similar situations caused by disasters and particularly for regulatory authorities who design emergency preparedness plans. (author)

  1. Insertion devices at the advanced photon source

    International Nuclear Information System (INIS)

    Moog, E.R.

    1996-01-01

    The insertion devices being installed at the Advanced Photon Source cause the stored particle beam to wiggle, emitting x-rays with each wiggle. These x-rays combine to make an intense beam of radiation. Both wiggler and undulator types of insertion devices are being installed; the characteristics of the radiation produced by these two types of insertion devices are discussed, along with the reasons for those characteristics

  2. The diagnosis of the gastric cancer using catheter-type semiconductor radiation detector. Comparison of diagnostic values of. beta. -emitting radionuclide label with. gamma. -emitting label

    Energy Technology Data Exchange (ETDEWEB)

    Sassa, R; Iwase, T [Asahi Life Foundation, Tokyo (Japan). Inst. for Adult Diseases; Sugita, T; Iio, M

    1975-06-01

    The diagnostic usefulness of /sup 32/P-phosphate for human gastric cancer, using a catheter-type semiconductor radiation detector (CASRAD) combined with gastrofiberscope technique, has already been reported by the authors. They have in addition used sup(99m)Tc-bleomycin, sup(99m)Tc-tetracycline in the diagnosis of experimental rabbit gastric cancer, too. In the present study, further refinement of the technique for the ..beta..-ray labeled substance (/sup 32/P-phosphate) for detection of the gastric cancer was compared with that of ..gamma..-ray labeled substance (sup(99m)Tc-tetracycline). A more correct diagnosis of the gastric cancer by in vivo measurement of beta activity could be obtained, when the collimater, made of stainless steel, was attached to the top of the detector. In this way contribution to the count from the adjacent tissues or organs could be eliminated. They were unable to produce an effective and useful collimater for ..gamma..-ray labeled substance which could to be used safely in vivo. Because of the unsatisfactory collimater, radioactivities of the adjacent organs caused on increase in the radioactivity of the background. Therefore inspite of the recent introduction of various sup(99m)Tc-tumor agents, these labels were not applicable to the CASRAD method. For such a small detector system, ..beta..-labels, represented by /sup 32/P-phosphate, was still prefererable to ..gamma..-labels.

  3. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  4. 60Co gamma radiation effect on AlGaN//AlN/GaN HEMT devices

    International Nuclear Information System (INIS)

    Wang Yanping; Luo Yinhong; Wang Wei; Zhang Keying; Guo Hongxia; Guo Xiaoqiang; Wang Yuanming

    2013-01-01

    The testing techniques and experimental methods of the 60 Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained. (authors)

  5. Design and testing of an innovative solar radiation measurement device

    International Nuclear Information System (INIS)

    Badran, Omar; Al-Salaymeh, Ahmed; El-Tous, Yousif; Abdala, Wasfi

    2010-01-01

    After review of studies conducted on the solar radiation measuring systems, a new innovative instrument that would help in measuring the accurate solar radiation on horizontal surfaces has been designed and tested. An advanced instrument with ease of use and high precision that would enable the user to take the readings in terms of solar intensity (W/m 2 ) has been tested. Also, the innovative instrument can record instantaneous readings of the solar intensities as well as the averages value of the solar radiation flux during certain periods of time. The instrument based in its design on being programmed by programmable interfacing controller (PIC). Furthermore, the power supply circuit is fed by the solar energy cells and does not need an external power source.

  6. The Pocketable Electronic Devices in Radiation Oncology (PEDRO) Project

    DEFF Research Database (Denmark)

    De Bari, Berardino; Franco, P.; Niyazi, Maximilian

    2016-01-01

    ) members of the national radiation or clinical oncology associations of the countries involved in the study. The 15 items investigated diffusion of MEDs (smartphones and/or tablets), their impact on daily clinical activity, and the differences perceived by participants along time. Results: A total of 386...... in young professionals working in radiation oncology. Looking at these data, it is important to verify the consistency of information found within apps, in order to avoid potential errors eventually detrimental for patients. “Quality assurance” criteria should be specifically developed for medical apps...

  7. Discrete curved ray-tracing method for radiative transfer in an absorbing-emitting semitransparent slab with variable spatial refractive index

    International Nuclear Information System (INIS)

    Liu, L.H.

    2004-01-01

    A discrete curved ray-tracing method is developed to analyze the radiative transfer in one-dimensional absorbing-emitting semitransparent slab with variable spatial refractive index. The curved ray trajectory is locally treated as straight line and the complicated and time-consuming computation of ray trajectory is cut down. A problem of radiative equilibrium with linear variable spatial refractive index is taken as an example to examine the accuracy of the proposed method. The temperature distributions are determined by the proposed method and compared with the data in references, which are obtained by other different methods. The results show that the discrete curved ray-tracing method has a good accuracy in solving the radiative transfer in one-dimensional semitransparent slab with variable spatial refractive index

  8. Radiation-resistant requirements analysis of device and control component for advanced spent fuel management process

    Energy Technology Data Exchange (ETDEWEB)

    Song, Tai Gil; Park, G. Y.; Kim, S. Y.; Lee, J. Y.; Kim, S. H.; Yoon, J. S. [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2002-02-01

    It is known that high levels of radiation can cause significant damage by altering the properties of materials. A practical understanding of the effects of radiation - how radiation affects various types of materials and components - is required to design equipment to operate reliably in a gamma radiation environment. When designing equipment to operate in a high gamma radiation environment, such as will be present in a nuclear spent fuel handling facility, several important steps should be followed. In order to active test of the advanced spent fuel management process, the radiation-resistant analysis of the device and control component for active test which is concerned about the radiation environment is conducted. Also the system design process is analysis and reviewed. In the foreign literature, 'threshold' values are generally reported. the threshold values are normally the dose required to begin degradation in a particular material property. The radiation effect analysis for the device of vol-oxidation and metalization, which are main device for the advanced spent fuel management process, is performed by the SCALE 4.4 code. 5 refs., 4 figs., 13 tabs. (Author)

  9. Green light emitting nanostructures of Tb3+ doped LaOF prepared via ultrasound route applicable in display devices

    Science.gov (United States)

    Suresh, C.; Nagabhushana, H.; Basavaraj, R. B.; Prasad, B. Daruka

    2017-05-01

    For the first time Tb3+ (1-5 mol %) doped LaOF nanophosphors using Aloe vera (AV) leaves extract as bio-surfactant were synthesized by facile ultrasound supported sonochemical route at relatively high temperature (700°C) and short duration of 3h. The powder X-ray diffraction (PXRD) profiles of LaOF nanophosphors showed tetragonal structure. The morphological features of LaOF with effect of Sonication time and concentration of bio-surfactant were studied by scanning electron microscope (SEM). The particle size were estimated from transmission electron microscope (TEM) image was found to be in the range of 20-30 nm. The characteristic photoluminescence emission peaks at 487, 541, 586 and 620 nm in green region corresponding to 5D4→7Fj (j=6, 5, 4, 3) transitions of Tb3+ were observed. The LaOF: Tb3+ nanophosphors exhibit green luminescence with better chromaticity coordinates, colour purity and higher intensity under low-voltage electron beam excitation were observed by Commission International De I'Eclairage (CIE) along with colour correlated temperature (CCT). All results indicate that these obtained nanophosphors have potential applications in field emission display device.

  10. The Role of Charge Balance and Excited State Levels on Device Performance of Exciplex-based Phosphorescent Organic Light Emitting Diodes.

    Science.gov (United States)

    Lee, Sangyeob; Koo, Hyun; Kwon, Ohyun; Jae Park, Young; Choi, Hyeonho; Lee, Kwan; Ahn, Byungmin; Min Park, Young

    2017-09-20

    The design of novel exciplex-forming co-host materials provides new opportunities to achieve high device performance of organic light emitting diodes (OLEDs), including high efficiency, low driving voltage and low efficiency roll-off. Here, we report a comprehensive study of exciplex-forming co-host system in OLEDs including the change of co-host materials, mixing composition of exciplex in the device to improve the performance. We investigate various exciplex systems using 5-(3-4,6-diphenyl-1,3,5-triazin-2-yl)phenyl-3,9-diphenyl-9H-carbazole, 5-(3-4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-9-phenyl-9H-3,9'-bicarbazole, and 2-(3-(6,9-diphenyl-9H-carbazol-4-yl)phenyl)-4-phenylbenzo[4,5]thieno[3,2-d]pyrimidine, as electron transporting (ET: electron acceptor) hosts and 9,9'-dipenyl-9H, 9'H-3,3'-bicarbazole and 9-([1,1'-biphenyl]-4-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole as hole transporting (HT: electron donor) hosts. As a result, a very high current efficiency of 105.1 cd/A at 10 3  cd/m 2 and an extremely long device lifetime of 739 hrs (t 95 : time after 5% decrease of luminance) are achieved which is one of the best performance in OLEDs. Systematic approach, controlling mixing ratio of HT to ET host materials is suggested to select the component of two host system using energy band matching and charge balance optimization method. Furthermore, our analysis on exciton stability also reveal that lifetime of OLEDs have close relationship with two parameters; singlet energy level difference of HT and ET host and difference of singlet and triplet energy level in exciplex.

  11. Radiation Control Act 1977 - No 66 of 1977

    International Nuclear Information System (INIS)

    1977-01-01

    This Act regulates the use of radioactive materials and radiation-emitting devices. It sets up a Radiation Advisory Council to advise the competent authorities on questions within the scope of the Act, also with a view to radiation protection. The Act also lays down a licensing system for such materials and devices. The Radioactive Substances Acts 1954 and 1966 are repealed. (NEA) [fr

  12. Radiation and detectors introduction to the physics of radiation and detection devices

    CERN Document Server

    Cerrito, Lucio

    2017-01-01

    This textbook provides an introduction to radiation, the principles of interaction between radiation and matter, and the exploitation of those principles in the design of modern radiation detectors. Both radiation and detectors are given equal attention and their interplay is carefully laid out with few assumptions made about the prior knowledge of the student. Part I is dedicated to radiation, broadly interpreted in terms of energy and type, starting with an overview of particles and forces, an extended review of common natural and man-made sources of radiation, and an introduction to particle accelerators. Particular attention is paid to real life examples, which place the types of radiation and their energy in context. Dosimetry is presented from a modern, user-led point of view, and relativistic kinematics is introduced to give the basic knowledge needed to handle the more formal aspects of radiation dynamics and interaction. The explanation of the physics principles of interaction between radiation an...

  13. Device for introducing radiative pellets in a tube

    International Nuclear Information System (INIS)

    Michel, A.; Milesi, A.

    1983-01-01

    Fuel sheaths are filled through a device comprising a funnel-guide with a bore having a diameter and slightly higher than pellet diameter and slightly lower than fuel can inside diameter. The flaring part of the funnel is toward facing a pellet distributor placed in a containment cell. The fuel can is tightened and aligned for a close contact with the funnel-guide [fr

  14. Device for the radiation centering at electron emitters

    International Nuclear Information System (INIS)

    Panzer, S.; Ardenne, T. von; Jessat, K.; Bahr, G.

    1985-01-01

    The invention has been directed at a device for a simplified and reliable centering of electron beams at electron emitters in particular for welding and thermal surface modifications. The electron beam has been focussed relatively to an electron-optical lens. A movable masked electron detector has been arranged at the electron beam deflection plane. The electron detector is connected with an electronic data evaluation equipment

  15. Characteristics of withstanding radiation damage of InP crystals and devices

    International Nuclear Information System (INIS)

    Yamaguchi, Masafumi; Ando, Koshi

    1988-01-01

    Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

  16. The solar ultraviolet B radiation protection provided by shading devices with regard to its diffuse component.

    Science.gov (United States)

    Kudish, Avraham I; Harari, Marco; Evseev, Efim G

    2011-10-01

    The composition of the incident solar global ultraviolet B (UVB) radiation with regard to its beam and diffuse radiation fractions is highly relevant with regard to outdoor sun protection. This is especially true with respect to sun protection during leisure-time outdoor sun exposure at the shore and pools, where people tend to escape the sun under shade trees or different types of shading devices, e.g., umbrellas, overhangs, etc., believing they offer protection from the erythemal solar radiation. The degree of sun protection offered by such devices is directly related to the composition of the solar global UVB radiation, i.e., its beam and diffuse fractions. The composition of the incident solar global UVB radiation can be determined by measuring the global UVB (using Solar Light Co. Inc., Model 501A UV-Biometer) and either of its components. The beam component of the UVB radiation was determined by measuring the normal incidence beam radiation using a prototype, tracking instrument consisting of a Solar Light Co. Inc. Model 501A UV-Biometer mounted on an Eppley Solar Tracker Model St-1. The horizontal beam component of the global UVB radiation was calculated from the measured normal incidence using a simple geometric correlation and the diffuse component is determined as the difference between global and horizontal beam radiations. Horizontal and vertical surfaces positioned under a horizontal overhang/sunshade or an umbrella are not fully protected from exposure to solar global UVB radiation. They can receive a significant fraction of the UVB radiation, depending on their location beneath the shading device, the umbrella radius and the albedo (reflectance) of the surrounding ground surface in the case of a vertical surface. Shading devices such as an umbrella or horizontal overhang/shade provide relief from the solar global radiation and do block the solar global UVB radiation to some extent; nevertheless, a significant fraction of the solar global UVB

  17. Space and military radiation effects in silicon-on-insulator devices

    International Nuclear Information System (INIS)

    Schwank, J.R.

    1996-09-01

    Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

  18. Radiation Isotope Identification Device (RIIDs) Field Test and Evaluation Campaign

    International Nuclear Information System (INIS)

    Christopher Hodge, Raymond Keegan

    2007-01-01

    Handheld, backpack, and mobile sensors are elements of the Global Nuclear Detection System for the interdiction and control of illicit radiological and nuclear materials. They are used by the U.S. Department of Homeland Security (DHS) and other government agencies and organizations in various roles for border protection, law enforcement, and nonproliferation monitoring. In order to systematically document the operational performance of the common commercial off-the-shelf portable radiation detection systems, the DHS Domestic Nuclear Detection Office conducted a test and evaluation campaign conducted at the Nevada Test Site from January 18 to February 27, 2006. Named 'Anole', it was the first test of its kind in terms of technical design and test complexities. The Anole test results offer users information for selecting appropriate mission-specific portable radiation detection systems. The campaign also offered manufacturers the opportunity to submit their equipment for independent operationally relevant testing to subsequently improve their detector performance. This paper will present the design, execution, and methodologies of the DHS Anole portable radiation detection system test campaign

  19. Detection of x-rays emitted from a plasma focus device with energy of 2.8 KJ, and its applications in plasma diagnostic and radiography

    International Nuclear Information System (INIS)

    AL-Hawat, Sh.; Akel, M.

    2011-06-01

    The local plasma focus device was modified by replacing the old capacitors (25μF,20 kV ,1.43μH ) and the open spark gap by new capacitors with (25μF,20 kV ,200 nH ) and a new closed spark gap, so instead of a current of 50 kA as a maximum value we obtained a maximum current about 120 kA. The modified device is capable now to generate x-rays, which was confirmed by taking some radiographies for metallic pieces, electronic elements and others . In addition to that some diagnostics were carried out on the device using Ohm voltage divider to record voltage curves, Rogovskii coil for measuring the current, and five channel diodes to evaluate the temporal evolution of x-rays generated in the device working on argon vs. pressure and voltage. The generation of the soft x-ray emission in a low energy 2.8 kJ plasma focus device operated with argon using a detector of five PIN-Si BPX-65 diodes filtered with different foils of Mylar, Al and Cu. Spectral analysis using the recorded x-ray signals ratio method shows that there are two components in the x-ray emissions: one arising from the focused argon plasma with temperature of 2.5 keV and the other arising from the electron beam activity on copper anode, where the second component is predominant in most of investigated experiments due to the used of solid anode. Numerical experiments were carried out using five phases radiative Lee model RADPF5.15d-dd with N 2 , O 2 , Ar, Ne gases on plasma focus device AECS PF1-2 (or PF SY1-2) for its characterization and soft x-ray optimization. (author)

  20. Malfunction of cardiac devices after radiotherapy without direct exposure to ionizing radiation: mechanisms and experimental data.

    Science.gov (United States)

    Zecchin, Massimo; Morea, Gaetano; Severgnini, Mara; Sergi, Elisabetta; Baratto Roldan, Anna; Bianco, Elisabetta; Magnani, Silvia; De Luca, Antonio; Zorzin Fantasia, Anna; Salvatore, Luca; Milan, Vittorino; Giannini, Gianrossano; Sinagra, Gianfranco

    2016-02-01

    Malfunctions of cardiac implantable electronical devices (CIED) have been described after high-energy radiation therapy even in the absence of direct exposure to ionizing radiation, due to diffusion of neutrons (n) causing soft errors in inner circuits. The purpose of the study was to analyse the effect of scattered radiation on different types and models of CIED and the possible sources of malfunctions. Fifty-nine explanted CIED were placed on an anthropomorphous phantom of tissue-equivalent material, and a high-energy photon (15 MV) radiotherapy course (total dose = 70 Gy) for prostate treatment was performed. All devices were interrogated before and after radiation. Radiation dose, the electromagnetic field, and neutron fluence at the CIED site were measured. Thirty-four pacemakers (PM) and 25 implantable cardioverter-defibrillators (ICD) were analysed. No malfunctions were detected before radiation. After radiation a software malfunction was evident in 13 (52%) ICD and 6 (18%) PM; no significant electromagnetic field or photon radiations were detected in the thoracic region. Neutron capture was demonstrated by the presence of the (198)Au((197)Au + n) or (192)Ir((191)Ir + n) isotope activation; it was significantly greater in ICD than in PM and non-significantly greater in damaged devices. A greater effect in St Jude PM (2/2 damaged), Boston (9/11), and St Jude ICD (3/6) and in older ICD models was observed; the year of production was not relevant in PM. High-energy radiation can cause different malfunctions on CIED, particularly ICD, even without direct exposure to ionizing radiation due to scattered radiation of neutrons produced by the linear accelerator. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2015. For permissions please email: journals.permissions@oup.com.