Radiation ray measuring device

International Nuclear Information System (INIS)

Maekawa, Tatsuyuki; Ida, Masaki.

1997-01-01

The present invention provides a chained-radiation ray monitoring system which can be applied to an actual monitoring system of a nuclear power plant or the like. Namely, this device comprises a plurality of scintillation detectors. Each of the detectors has two light take-out ports for emitting light corresponding to radiation rays irradiated from the object of the measurement to optical fibers. In addition, incident light from the optical fiber by way of one of the light take-out optical ports is transmitted to the other of the ports and sent from the other optical port to the fibers. Plurality sets of measuring systems are provided in which each of the detectors are disposed corresponding to a plurality of objects to be measured. A signal processing device is (1) connected with optical fibers of plurality sets of measuring systems in conjunction, (2) detects the optical pulses inputted from the optical fibers to identify the detector from which the optical pulses are sent and (3) measures the amount of radiation rays detected by the identified detector. As a result, the device of the present invention can form a measuring system with redundancy. (I.S.)

Light emitting device having peripheral emissive region

Science.gov (United States)

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

Energy Technology Data Exchange (ETDEWEB)

Lijuan Zou

2003-08-05

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

International Nuclear Information System (INIS)

Lijuan Zou

2003-01-01

Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

International Nuclear Information System (INIS)

Liu Xiang; Wei Fuxiang; Liu Hui

2009-01-01

Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated. TBADN:3%DSAPh and Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 were used as emitting materials of microcavity OLEDs. On a patterned glass substrate, silver was deposited as reflective anode, and copper phthalocyanine (CuPc) layer as HIL and 4'-bis[N-(1-Naphthyl)- N-phenyl-amino]biphenyl (NPB) layer as HTL were made. Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%. By changing the thickness of indium tin oxide ITO, deep blue with Commission Internationale de L'Eclairage chromaticity coordinates (CIEx, y) of (0.141, 0.049) was obtained on TBADN:3%DSAPh devices, and different color (red, blue and green) was obtained on Alq 3 :DCJTB/TBADN:TBPe/Alq 3 :C545 devices, full width at half maxima (FWHM) was only 17 nm. The spectral intensity and FWHM of emission in cavity devices have also been studied.

Estimating the Infrared Radiation Wavelength Emitted by a Remote Control Device Using a Digital Camera

Science.gov (United States)

Catelli, Francisco; Giovannini, Odilon; Bolzan, Vicente Dall Agnol

2011-01-01

The interference fringes produced by a diffraction grating illuminated with radiation from a TV remote control and a red laser beam are, simultaneously, captured by a digital camera. Based on an image with two interference patterns, an estimate of the infrared radiation wavelength emitted by a TV remote control is made. (Contains 4 figures.)

Recent Advances in Conjugated Polymers for Light Emitting Devices

Science.gov (United States)

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Light-emitting device test systems

Science.gov (United States)

McCord, Mark; Brodie, Alan; George, James; Guan, Yu; Nyffenegger, Ralph

2018-01-23

Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

Si light-emitting device in integrated photonic CMOS ICs

Science.gov (United States)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Near-infrared light emitting device using semiconductor nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon; Correa, Raoul Emile; Shirasaki, Yasuhiro; Bawendi, Moungi G.; Bulovic, Vladimir; Scherer, Jennifer

2018-04-03

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

Efficient light emitting devices based on phosphorescent partially doped emissive layers

KAUST Repository

Yang, Xiaohui; Jabbour, Ghassan E.

2013-01-01

We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices

Efficient light emitting devices based on phosphorescent partially doped emissive layers

KAUST Repository

Yang, Xiaohui

2013-05-29

We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

Pyridine Based Polymer Light-Emitting Devices

National Research Council Canada - National Science Library

Wang, Y

1997-01-01

...) as a hole transporting/electron blocking layer. This improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

Reading device of a radiation image contained in a radioluminescent screen and tomography device containing it

International Nuclear Information System (INIS)

Allemand, R.; Cuzin, M.; Parot, P.

1984-01-01

The present invention is aimed at improving the random access time to a stimulable radioluminescent screen point (and consequently the reading time of the screen image); it is noticeably useful for longitudinal tomography. The reading device contains a source emitting a stimulation radiation beam towards the stimulable radioluminescent screen, a control mean of the stimulation radiation beam and a deflection mean which allows the beam to scan the screen surface. The device is characterized by the use of a very fast acousto-optical type deflection mean [fr

Silicon based light-emitting materials and devices

International Nuclear Information System (INIS)

Chen Weide

1999-01-01

Silicon based light-emitting materials and devices are the key to optoelectronic integration. Recently, there has been significant progress in materials engineering methods. The author reviews the latest developments in this area including erbium doped silicon, porous silicon, nanocrystalline silicon and Si/SiO 2 superlattice structures. The incorporation of these different materials into devices is described and future device prospects are assessed

Smartphone-Driven Low-Power Light-Emitting Device

Directory of Open Access Journals (Sweden)

Hea-Ja An

2017-01-01

Full Text Available Low-level light (laser therapy (LLLT has been widely researched in the recent past. Existing LLLT studies were performed based on laser. Recently, studies using LED have increased. This study presents a smartphone-driven low-power light-emitting device for use in colour therapy as an alternative medicine. The device consists of a control unit and a colour probe. The device is powered by and communicates with a smartphone using USB On-The-Go (OTG technology. The control unit controls emitting time and intensity of illumination with the configuration value of a smartphone application. Intensity is controlled by pulse width modulation (PWM without feedback. A calibration is performed to resolve a drawback of no feedback. To calibrate, intensity is measured in every 10 percent PWM output. PWM value is linearly calibrated to obtain accurate intensity. The device can control the intensity of illumination, and so, it can find application in varied scenarios.

Light collection optics for measuring flux and spectrum from light-emitting devices

Science.gov (United States)

McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

2016-05-24

Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

Optical radiation emitted by a silver surface bombarded by low-energy electrons

International Nuclear Information System (INIS)

Miserey, F.; Lebon, P.; Septier, A.; Trehin, F.; Beaugrand, C.

1975-01-01

Thick silver targets are obtained on flat glass discs by evaporation in a UHV cell (p -10 torr) and their optical coefficients measured by ellipsometry. A field-emission electron gun bombards a limited region of the target, corresponding to the entry pupil of a light spectrometer. Radiation emitted in the domain 250-600nm is analyzed for both normal and parallel polarizations. Spectral distributions of photons are obtained by using a very sensitive counting device including a multi channel analyzer. First experimental results concerning optical radiation generated by 6keV electrons are reported and compared to Transition Radiation and Bremsstrahlung theoretical spectra [fr

Radiation-emitting Electronic Product Codes

Data.gov (United States)

U.S. Department of Health & Human Services — This database contains product names and associated information developed by the Center for all products, both medical and non-medical, which emit radiation. It...

Controlled light emission from white organic light-emitting devices with a single blue-emitting host and multiple fluorescent dopants

International Nuclear Information System (INIS)

Chin, Byung Doo; Kim, Jai Kyeong; Park, O Ok

2007-01-01

In this work, we fabricated white organic light-emitting devices (WOLEDs) containing a layered light-emitting region composed of a single blue-emitting host and different fluorescent dopant materials. The effects of varying the dye-doping ratio and emitting layer thickness on the efficiency, lifetime, spectral voltage-dependence and white balance were investigated for devices with a blue/orange stacked layer structure. Addition of a blue host layer doped with a green-emitting dopant, to give a blue/green/orange emitter, resulted in a broadband white spectrum without the need for a charge-blocking interlayer. The composition of blue, green and orange dopants in the host and the thickness of each emitting layer were optimized, resulting in a device efficiency of 9-11 cd A -1 even at a high brightness of 10 000 cd m -2 (achieved at a bias voltage of less than 9 V) with an emission spectrum suitable for lighting applications

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

Energy Technology Data Exchange (ETDEWEB)

Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

2014-04-15

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

KAUST Repository

Yang, Xiaohui; Zheng, Shijun; Chae, HyunSik; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

2013-01-01

We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4

Printing method for organic light emitting device lighting

Science.gov (United States)

Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

2013-03-01

Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

RADIATION PERFORMANCE OF GAN AND INAS/GAAS QUANTUM DOT BASED DEVICES SUBJECTED TO NEUTRON RADIATION

Directory of Open Access Journals (Sweden)

Dhiyauddin Ahmad Fauzi

2017-05-01

Full Text Available In addition to their useful optoelectronics functions, gallium nitride (GaN and quantum dots (QDs based structures are also known for their radiation hardness properties. With demands on such semiconductor material structures, it is important to investigate the differences in reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diode (LED and InAs/GaAs dot-in-a well (DWELL samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V and capacitance-voltage (C-V electrical characterisation method. Results suggested that the GaN based sample is less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.

Solution processed, white emitting tandem organic light-emitting diodes with inverted device architecture.

Science.gov (United States)

Höfle, Stefan; Schienle, Alexander; Bernhard, Christoph; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-08-13

Fully solution processed monochromatic and white-light emitting tandem or multi-photon polymer OLEDs with an inverted device architecture have been realized by employing WO3 /PEDOT:PSS/ZnO/PEI charge carrier generation layers. The luminance of the sub-OLEDs adds up in the stacked device indicating multi-photon emission. The white OLEDs exhibit a CRI of 75. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluorescent deep-blue and hybrid white emitting devices based on a naphthalene-benzofuran compound

KAUST Repository

Yang, Xiaohui

2013-08-01

We report the synthesis, photophysics and electrochemical properties of naphthalene-benzofuran compound 1 and its application in organic light emitting devices. Fluorescent deep-blue emitting devices employing 1 as the emitting dopant embedded in 4-4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP) host show the peak external quantum efficiency of 4.5% and Commission Internationale d\\'Énclairage (CIE) coordinates of (0.15, 0.07). Hybrid white devices using fluorescent blue emitting layer with 1 and a phosphorescent orange emitting layer based on an iridium-complex show the peak external quantum efficiency above 10% and CIE coordinates of (0.31, 0.37). © 2013 Published by Elsevier B.V.

Organic light emitting device architecture for reducing the number of organic materials

Science.gov (United States)

D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

2011-10-18

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

White organic light-emitting devices with high color purity and stability

Science.gov (United States)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-04-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

Novel Biomedical Device Utilizing Light-Emitting Nanostructures Developed

Science.gov (United States)

Scardelletti, Maximilian C.; Goldman, Rachel

2004-01-01

Sketches and chemical diagrams of state-of-the-art device and novel proposed device are presented. Current device uses a diode laser that emits into a fluorescent fluid only one wavelength and a photodetector diode that detects only one wavelength. Only one type of bacteria can be detected. The proposed device uses a quantum dot array that emits into a fluorescent fluid multiple wavelengths and an NIR 512 spectrometer that scans 0.8- to 1.7-mm wavelengths. Hundreds of different bacteria and viruses can be detected. A novel biomedical device is being developed at the NASA Glenn Research Center in cooperation with the University of Michigan. This device uses nano-structured quantum dots that emit light in the near-infrared (IR) region. The nanostructured quantum dots are used as a source and excite fluorochrome polymers coupled with antibodies that seek out and attach to specific bacteria and viruses. The fluorochrome polymers/antibodies fluoresce at specific wavelengths in the near-IR spectrum, but these wavelengths are offset from the excitation wavelength and can be detected with a tunable spectrometer. The device will be used to detect the presence of viruses and bacteria in simple fluids and eventually in more complex fluids, such as blood. Current state-of-the-art devices are limited to single bacteria or virus detection and a considerable amount of time and effort is required to prepare samples for analysis. Most importantly, the devices are quite large and cumbersome, which prohibits them from being used on the International Space Station and the space shuttles. This novel device uses nanostructured quantum dots which, through molecular beam epitaxy and highly selective annealing processes, can be developed into an illumination source that could potentially generate hundreds of specific wavelengths. As a result, this device will be able to excite hundreds of antibody/fluorochrome polymer combinations, which in turn could be used to detect hundreds of bacteria

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

Science.gov (United States)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties

Directory of Open Access Journals (Sweden)

Inge Verboven

2018-02-01

Full Text Available To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm/barium titanate (10 µm/zinc-oxide (10 µm and poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (10 µm. Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm as smoothing layer/silver (200 nm/poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (35 nm/super yellow (80 nm/calcium/aluminum (12/17 nm. Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

Science.gov (United States)

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaN light-emitting device based on ionic liquid electrolyte

Science.gov (United States)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Light-Emitting Devices Based on Pyridine-Containing Conjugated Polymers

National Research Council Canada - National Science Library

Wang, Y

1997-01-01

...) as hole transporting/electron blocking polymer, which improves the device efficiency and brightness significantly due to the charge confinement and exciplex emission at the PVK/emitting polymer interface...

Radiation Emitting Product Corrective Actions and Recalls

Data.gov (United States)

U.S. Department of Health & Human Services — This database provides descriptions of radiation-emitting products that have been recalled under an approved corrective action plan to remove defective and...

Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

Energy Technology Data Exchange (ETDEWEB)

Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

2008-07-01

Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

White organic light-emitting devices with high color purity and stability

International Nuclear Information System (INIS)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-01-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq 3 (20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm −2  at the applied voltage of 13.4 V and Commission International de 1′Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIE x, y = 0.0171, 0.0167; corresponding Δu′v′ = 0.0119) when the current density increases from 10 to 100 mA cm −2 . It reveals that the emissive dopant Rb acts as charge traps to improve electron–hole balance, provides sites for electron–hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates. (paper)

White organic light-emitting devices incorporating nanoparticles of II-VI semiconductors

International Nuclear Information System (INIS)

Ahn, Jin H; Bertoni, Cristina; Dunn, Steve; Wang, Changsheng; Talapin, Dmitri V; Gaponik, Nikolai; Eychmueller, Alexander; Hua Yulin; Bryce, Martin R; Petty, Michael C

2007-01-01

A blue-green fluorescent organic dye and red-emitting nanoparticles, based on II-VI semiconductors, have been used together in the fabrication of white organic light-emitting devices. In this work, the materials were combined in two different ways: in the form of a blend, and as separate layers deposited on the opposite sides of the substrate. The blended-layer structure provided purer white emission. However, this device also exhibited a number of disadvantages, namely a high drive voltage, a low efficiency and some colour instability. These problems could be avoided by using a device structure that was fabricated using separate dye and nanoparticle layers

Vacuum Deposited Organic Light Emitting Devices on Flexible Substrates

National Research Council Canada - National Science Library

Forrest, Stephen

2002-01-01

The objective of this eight year program was to demonstrate both passive and active matrix, flexible, small scale displays based on small molecular weight organic light emitting device (OLED) technology...

Study of organic light emitting devices (OLEDs) with optimal emission efficiency

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [School of Engineering and IT, B-purple 12, Faculty of EHS, Charles Darwin University, Darwin, NT 0909 (Australia)

2010-04-15

The external emission efficiency of organic light emitting devices (OLEDs) is analysed by studying the rate of spontaneous emission of both singlet and triplet excitons and their corresponding radiative lifetimes. Rates of spontaneous emissions are calculated from the first order perturbation theory using the newly discovered time-dependent spin-orbit-exciton-photon interaction operator as the perturbation operator. It is clearly shown how the new interaction operator is responsible for attracting triplet excitons to a phosphor (heavy metal atom) and then it flips the spins to a singlet configuration. Thus, the spin forbidden transition becomes spin allowed. Calculated rates agree with the experimental results qualitatively. Results are of general interests for OLED studies. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

GREEN LIGHT EMITTING TRICOMPONENT LUMINOPHORS OF 2-NAPHTHOL FOR CONSTRUCTION OF ORGANIC LIGHT EMITTING DEVICES

OpenAIRE

K. G. MANE , P. B. NAGORE , DR. S. R. PUJARI

2018-01-01

This article presents a previous study and incredible progress in basic theoretical modeling, and working for organic light-emitting devices (OLEDs) including preparation and characteristic studies of Organo- Luminescent Materials by conventional solid state reaction technique.

Organic light-emitting devices with fullerene/aluminum composite anode

International Nuclear Information System (INIS)

Song, Q.L.; Li, C.M.; Wang, M.L.; Sun, X.Y.

2008-01-01

Our previous work demonstrates that fullerene/Aluminum (C 60 /Al) can be used as a composite anode in organic solar cells. In this work, we report that an organic light emitting devices (OLEDs) can be made with the C 60 /Al composite anode as well. The OLEDs show comparable current density and brightness to the traditional devices with the indium tin oxide anode

Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

CERN Document Server

Ohtsu, Motoichi

2016-01-01

This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

Oxycarbonitride phosphors and light emitting devices using the same

Science.gov (United States)

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-10-08

Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Nanocrystalline silicon as the light emitting material of a field emission display device

International Nuclear Information System (INIS)

Biaggi-Labiosa, A; Sola, F; Resto, O; Fonseca, L F; Gonzalez-BerrIos, A; Jesus, J De; Morell, G

2008-01-01

A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850 nm range was obtained at 16 V μm -1 . This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

Science.gov (United States)

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

2018-01-01

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

DEFF Research Database (Denmark)

Kopylov, Oleksii

This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal

2016-10-06

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Hybrid perovskites: Approaches towards light-emitting devices

KAUST Repository

Alias, Mohd Sharizal; Dursun, Ibrahim; Priante, Davide; Saidaminov, Makhsud I.; Ng, Tien Khee; Bakr, Osman; Ooi, Boon S.

2016-01-01

The high optical gain and absorption of organic-inorganic hybrid perovskites have attracted extensive research for photonic device applications. Using the bromide halide as an example, we present key approaches of our work towards realizing efficient perovskites based light-emitters. The approaches involved determination of optical constants for the hybrid perovskites thin films, fabrication of photonic nanostructures in the form of subwavelength grating reflector patterned directly on the hybrid perovskites as light manipulation layer, and enhancing the emission property of the hybrid perovskites by using microcavity structure. Our results provide a platform for realization of hybrid perovskites based light-emitting devices for solid-state lighting and display applications. © 2016 IEEE.

Irradiation device

International Nuclear Information System (INIS)

Suzuki, Toshimitsu.

1989-01-01

In an irradiation device for irradiating radiation rays such as electron beams to pharmaceuticals, etc., since the distribution of scanned electron rays was not monitored, the electron beam intensity could be determined only indirectly and irradiation reliability was not satisfactory. In view of the above, a plurality of monitor wires emitting secondary electrons are disposed in the scanning direction near a beam take-out window of a scanning duct, signals from the monitor wires are inputted into a display device such as a cathode ray tube, as well as signals from the monitor wires at the central portion are inputted into counting rate meters to measure the radiation dose as well. Since secondary electrons are emitted when electron beams pass through the monitor wires and the intensity thereof is in proportion with the intensity of incident electron beams, the distribution of the radiation dose can be monitored by measuring the intensity of the emitted secondary electrons. Further, uneven irradiation, etc. can also be monitored to make the radiation of irradiation rays reliable. (N.H.)

Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

Energy Technology Data Exchange (ETDEWEB)

Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

2014-10-15

The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

An assessment of ultraviolet radiation components of light emitted ...

African Journals Online (AJOL)

An assessment of ultraviolet radiation components of light emitted from electric arc and their possible exposure risks. ... The study of Ultraviolet Radiation has of recent become interesting because of the health hazards it poses to human. Apart from its intensity reaching the earth from the sun, other man-made sources have ...

Principles of phosphorescent organic light emitting devices.

Science.gov (United States)

Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

2014-02-07

Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

Energy Technology Data Exchange (ETDEWEB)

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob, E-mail: sy96.lee@samsung.com [Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130 Samsung-ro, Suwon, Gyeonggi 443-803 (Korea, Republic of)

2015-07-27

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq){sub 2}(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq){sub 2}(acac). The lifetime of device (t{sub 95}: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

Efficient organic light-emitting devices with platinum-complex emissive layer

KAUST Repository

Yang, Xiaohui

2011-01-18

We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

Efficient organic light-emitting devices with platinum-complex emissive layer

KAUST Repository

Yang, Xiaohui; Wu, Fang-Iy; Haverinen, Hanna; Li, Jian; Cheng, Chien-Hong; Jabbour, Ghassan E.

2011-01-01

We report efficient organic light-emitting devices having a platinum-complex emissive layer with the peak external quantum efficiency of 17.5% and power efficiency of 45 lm W−1. Variation in the device performance with platinum-complex layer thickness can be attributed to the interplay between carrier recombination and intermolecular interactions in the layer. Efficient white devices using double platinum-complex layers show the external quantum efficiency of 10%, the Commission Internationale d’Énclairage coordinates of (0.42, 0.41), and color rendering index of 84 at 1000 cd m−2.

Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

KAUST Repository

Yang, Xiaohui

2011-07-28

We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency of 4.1% and Commission Internationale dÉnclairage coordinates of (0.16, 0.05). Efficient deep-blue emission as well as high triplet state energy of Cz-2pbb enables fabrication of hybrid white organic light emitting diodes with a single emissive layer. Hybrid white emitting devices based on Cz-2pbb show the peak external quantum efficiency exceeding 10% and power efficiency of 14.8 lm/W at a luminance of 500 cd/m2. © 2011 American Chemical Society.

Improved outcoupling of light in organic light emitting devices, utilizing a holographic DFB-structure

Energy Technology Data Exchange (ETDEWEB)

Reinke, Nils [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)]. E-mail: nils.reinke@physik.uni-augsburg.de; Fuhrmann, Thomas [Macromolecular Chemistry and Molecular Materials, University of Kassel (Germany); Perschke, Alexandra [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany); Franke, Hilmar [Organische Funktionsmaterialien, University of Duisburg-Essen (Germany)

2004-12-10

In this work organic light emitting devices (OLEDs) were fabricated implementing gratings, in order to extract waveguided electroluminescence (EL). The gratings were recorded by exposing thin films of the molecular azo glass N, N'-bis (4-phenyl)-N, N'-bis [(4-phenylazo)-phenyl] benzidine (AZOPD) to holographic light patterns. The photopatterned AZOPD serves as hole transport material for devices with aluminum-tris(8-hydroxyquinoline) doped with 1% of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (Alq{sub 3}:DCM) as emissive/electron transport layer. The corrugated devices showed enhanced emission in the forward direction. The emitted light is polarized preferably parallel to the grating lines. In addition, we have found a doubling in the total luminance with respect to the unstructured device.

Can a tachyon emit light radiation in all directions

Energy Technology Data Exchange (ETDEWEB)

Ramanujam, G A [NGM Coll., Tamil Nadu (India). Dept. of Physics

1976-03-01

It is shown here that a critical analysis of the approaches employed by various authors to accommodate tachyons into special relativity leads one to the conclusion that a tachyon can emit light radiation only along its line of motion.

Full color organic light-emitting devices with microcavity structure and color filter.

Science.gov (United States)

Zhang, Weiwei; Liu, Hongyu; Sun, Runguang

2009-05-11

This letter demonstrated the fabrication of the full color passive matrix organic light-emitting devices based on the combination of the microcavity structure, color filter and a common white polymeric OLED. In the microcavity structure, patterned ITO terraces with different thickness were used as the anode as well as cavity spacer. The primary color emitting peaks were originally generated by the microcavity and then the second resonance peak was absorbed by the color filter.

Efficient white organic light emitting devices with dual emitting layers

International Nuclear Information System (INIS)

Wu Yaoshan; Hwang Shiaowen; Chen Hsianhung; Lee Mengting; Shen Wenjian; Chen, C.H.

2005-01-01

In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF x / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm 2 , but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm 2 due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm 2

Radiation analysis devices, radiation analysis methods, and articles of manufacture

Science.gov (United States)

Roybal, Lyle Gene

2010-06-08

Radiation analysis devices include circuitry configured to determine respective radiation count data for a plurality of sections of an area of interest and combine the radiation count data of individual of sections to determine whether a selected radioactive material is present in the area of interest. An amount of the radiation count data for an individual section is insufficient to determine whether the selected radioactive material is present in the individual section. An article of manufacture includes media comprising programming configured to cause processing circuitry to perform processing comprising determining one or more correction factors based on a calibration of a radiation analysis device, measuring radiation received by the radiation analysis device using the one or more correction factors, and presenting information relating to an amount of radiation measured by the radiation analysis device having one of a plurality of specified radiation energy levels of a range of interest.

Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

Energy Technology Data Exchange (ETDEWEB)

Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li, Taiwan 32061 (China)

2011-09-01

Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m{sup 2}) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

International Nuclear Information System (INIS)

Chang, Chih-Hao; Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh; Chang, Hsin-Hua

2011-01-01

Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m 2 ) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

Science.gov (United States)

Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

2017-04-25

Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

White light emission from organic-inorganic hererostructure devices by using CdSe quantum dots as emitting layer

International Nuclear Information System (INIS)

Tang Aiwei; Teng Feng; Gao Yinhao; Li Dan; Zhao Suling; Liang Chunjun; Wang Yongsheng

2007-01-01

In this paper, white light emission was obtained from organic-inorganic heterostructure devices by using CdSe quantum dots as emitting layer, in which CdSe quantum dots were synthesized via a colloidal chemical approach by using CdO and Se powder as precursors. Photoluminescence of CdSe quantum dots demonstrated a white emission with a full wavelength at half maximum (FWHM) of about 200 nm under ambient conditions, and the white emission could be observed in both multilayer device ITO/PEDOT:PSS/CdSe/BCP/Alq 3 /Al and single-layer device: ITO/PEDOT:PSS/CdSe/Al. The broad emission was attributed to the inhomogeneous broadening. The CIE coordinates of the multilayer device were x=0.35 and y=0.40. The white-light-emitting diodes with CdSe quantum dots as the emitting layer are potentially useful in lighting applications

Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

Energy Technology Data Exchange (ETDEWEB)

Liu, Shengqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Ma, Zhu; Zhao, Juan [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2013-02-15

High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4 Prime ,6 Prime -difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2 Prime }]iridium (acetylacetonate) [(t-bt){sub 2}Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m{sup 2} (at 15.2 V), 79.0 cd/A (at 1550 cd/m{sup 2}) and 40.5 lm/W (at 1000 cd/m{sup 2}), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt){sub 2}Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. - Highlights: Black-Right-Pointing-Pointer Highly efficient WOLEDs based on two complementary layers were fabricated. Black-Right-Pointing-Pointer The yellow emissive layer was formed by utilizing undoping system. Black-Right-Pointing-Pointer The blue emissive layer was made by host-guest doping system. Black-Right-Pointing-Pointer The thickness of the yellow emissive layer was varied to make device optimization. Black-Right-Pointing-Pointer The optimized device achieved high power efficiency of 40.5 lm/W.

Degradation in organic light emitting devices

Science.gov (United States)

Dinh, Vincent Vinh

This thesis is about the fundamental causes of degradation in tris(8-Hydroxyquinoline) Aluminum (Alq3)-based organic light emitting diodes (OLEDs). Degradation typically occurs when a current is forced through an insulating material. Since the insulator does not support conduction waves (in its ground state), chemical restructuring must occur to accommodate the current. OLEDs have many technical advantages over the well known semiconductor-based light emitting diodes (LEDs). OLEDs have quantum efficiencies ˜1% (˜10 times higher than the LEDs), and operational power thresholds ˜.05mW (˜100 lower than the LEDs). OLEDs are preferred in power limited and portable devices; devices such as laptops and displays consume ˜1/4 of the supplied power---any power saving is significant. Other advantages, like better compliance to curved surfaces and ease of fabrication, give the OLEDs an even greater edge over the LEDs. OLEDs must have at least comparable or better lifetimes to remain attractive. Typical OLEDs last several 100hrs compared to the several 1000hrs for the LEDs. For reliable OLED application, it is necessary to understand the above breakdown mechanism. In this thesis, we attempt to understand the breakdown by looking at how OLEDs are made, how they work, and when they don't. In the opening sections, we give an overview of OLEDs and LEDs, especially how sustained luminescence is achieved through current circulation. Then in Chapter 2, we look at the basic components in the OLEDs. In Chapter 3 we look at how a hole material (like poly-vinyl carbazole or PVK) establishes an excitonic environment for the sustained luminescence in Alq3. We then approximate how potential is distributed when a simple luminescence system is in operation. In Chapter 4, we look at ways of measuring this distribution via the OLED impedance. Finally in Chapter 5, we look at the OLED stability under light emission conditions via PVK and Alq3 photoemission and photoabsorption spectra

Non-radiative recombination losses in polymer light-emitting diodes

NARCIS (Netherlands)

Kuik, M.; Koster, L. J. A.; Dijkstra, A. G.; Wetzelaer, G. A. H.; Blom, P. W. M.

We present a quantitative analysis of the loss of electroluminescence in light-emitting diodes (LEDs) based on poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylenevinylene] (MEH-PPV) due to the combination of non-radiative trap-assisted recombination and exciton quenching at the metallic cathode. It is

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

Science.gov (United States)

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Efficient white organic light emitting devices with dual emitting layers

Energy Technology Data Exchange (ETDEWEB)

Wu Yaoshan [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Hwang Shiaowen [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)]. E-mail: jesse@faculty.nctu.edu.tw; Chen Hsianhung [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Lee Mengting [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Shen Wenjian [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Chen, C.H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)

2005-09-22

In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF {sub x} / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm{sup 2}, but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm{sup 2} due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm{sup 2}.

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

Science.gov (United States)

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

All-inorganic white light emitting devices based on ZnO nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Nannen, Ekaterina

2012-09-21

Semiconductor nanaocrystals (NCs) are very promising candidates for lightweight large-area rollable displays and light emitting devices (LEDs). They are expected to combine the efficiency, robustness and color tunability of conventional semiconductor LEDs with the flexible fabrication techniques known from OLED technology, since the NCs are compatible with solution processing and therefore can be deposited on virtually any substrates including glass and plastic. Today, NC-LEDs consist of chemically synthesized QDs embedded in organic charge injection and transport layers. The organic layers limit the robustness of the NC-LEDs and result in significant constrictions within the device fabrication procedure, such as organic evaporation steps, inert (i.e. humidity and oxygen free) atmosphere and obligatory encapsulation. These limitations during the production process as well as complex chemical synthesis route of the implemented NCs and organic components lead to high fabrication costs and low turnover. So far, only prototype devices have been introduced by several research groups and industrial companies. Still, the main concern retarding NC-LEDs from market launch is the high content of toxic heavy metals like Cd in the active nanocrystalline light emitting material. Within this work, possible environmentally safe and ambient-air-compatible alternatives to conventional QDs and organics were explored, with the main focus on design and fabrication of completely inorganic white NC-LEDs with commercial ZnO nanoparticles as an active light emitting material. While the electrical transport properties through the NC-network of the commercially available VP AdNano {sup registered} ZnO2O particles were already to some extent explored, their optical properties and therefore suitability as an active light emitter in NC-LEDs were not studied so far. (orig.)

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Yu, Yue; Wu, Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn; He, Lin; Jiao, Bo; Hou, Xun

2015-08-31

We developed a solvent/non-solvent system to fabricate the multilayer organic light-emitting devices (OLEDs) based on poly(N-vinylcarbazole) (PVK) by solution-process. This solvent system consists of both the solvent and non-solvent of PVK, in which fluorescent small molecules could be fully dissolved and directly spin-coated on top of the PVK layer; it could effectively avoid the redissolution of PVK during the spin-coating process of small molecules emitting layer. In the further investigation of this system, we also demonstrated the three-component solvent system, and found out that the third component, a less volatile solvent of PVK, was crucial for preparing a smoother interface between PVK and emitting layer. Compared with OLEDs through the vacuum deposition, the devices fabricated by solution-process from the solvent/non-solvent system showed comparable efficiency, which indicate that the solvent/non-solvent system can be used as an alternative process to prepare the polymer and small molecule multilayer devices through all-solution-process. - Highlights: • We fabricate the multilayer OLEDs by solution-process using a novel system. • We develop a solvent/non-solvent system of polymer (PVK) to avoid redissolution. • Small molecules could be fully dissolved and directly spin-coated on PVK layer. • The devices fabricated by the system and vacuum deposition show comparable efficiency.

Ultraviolet spectral distribution and erythema-weighted irradiance from indoor tanning devices compared with solar radiation exposures.

Science.gov (United States)

Sola, Yolanda; Baeza, David; Gómez, Miguel; Lorente, Jerónimo

2016-08-01

Concern regarding the impact of indoor tanning devices on human health has led to different regulations and recommendations, which set limits on erythema-weighted irradiance. Here, we analyze spectral emissions from 52 tanning devices in Spanish facilities and compare them with surface solar irradiance for different solar zenith angles. Whereas most of the devices emitted less UV-B radiation than the midday summer sun, the unweighted UV-A irradiance was 2-6 times higher than solar radiation. Moreover, the spectral distributions of indoor devices were completely different from that of solar radiation, differing in one order of magnitude at some UV-A wavelengths, depending on the lamp characteristics. In 21% of the devices tested, the erythema-weighted irradiance exceeded 0.3Wm(-2): the limit fixed by the European standard and the Spanish regulation. Moreover, 29% of the devices fall within the UV type 4 classification, for which medical advice is required. The high variability in erythema-weighted irradiance results in a wide range of exposure times to reach 1 standard erythemal dose (SED: 100Jm(-2)), with 62% of devices requiring exposures of UV-A dose during this time period would be from 1.4 to 10.3 times more than the solar UV-A dose. Copyright © 2016 Elsevier B.V. All rights reserved.

Insertion devices at the advanced photon source

International Nuclear Information System (INIS)

Moog, E.R.

1996-01-01

The insertion devices being installed at the Advanced Photon Source cause the stored particle beam to wiggle, emitting x-rays with each wiggle. These x-rays combine to make an intense beam of radiation. Both wiggler and undulator types of insertion devices are being installed; the characteristics of the radiation produced by these two types of insertion devices are discussed, along with the reasons for those characteristics

Electron emitting filaments for electron discharge devices

International Nuclear Information System (INIS)

Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

1988-01-01

This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

Microwave discharge electrodeless lamps (MDEL). III. A novel tungsten-triggered MDEL device emitting VUV and UVC radiation for use in wastewater treatment.

Science.gov (United States)

Horikoshi, Satoshi; Miura, Takashi; Kajitani, Masatsugu; Serpone, Nick

2008-03-01

Exposure to low doses of the xenoestrogen bisphenol A (BPA) and to the hormonal 2,4-dichlorophenoxyacetic acid (2,4-D) herbicide, an environmental endocrine disruptor, can have serious health consequences such as the induction of mammary gland ductal hyperplasias and carcinoma (LaChapelle et al., Reprod. Toxicol., 2007, 23, 20; Murray et al., Reprod. Toxicol., 2007, 23, 383). To the extent that these toxins are present in wastewaters (Donald et al., Sci. Total Environ. 1999, 231, 173; Brotons et al., Environ. Health Perspect. 1994, 103, 608; Olea et al., Environ. Health Perspect. 1996, 104, 298; Biles et al., J. Agric. Food Chem. 1997, 45, 3541; Markey et al., J. Steroid Biochem. Mol. Biol., 2003, 83, 235), we examined their oxidative destruction in aqueous media by a novel light source. A tungsten-triggered microwave discharge electrodeless lamp (W-MDEL) was fabricated for possible use in wastewater treatment using vacuum UV-transparent quartz in which a tungsten trigger, also embedded in quartz, was attached to the MDEL to aid in the self-ignition of the lamp on irradiation at low microwave power levels. The quantity of mercury gas in the W-MDEL was optimized by monitoring the continuous radiation and peak intensities of the emitted light in the vacuum UV (VUV) and UVC regions. The usefulness of the W-MDEL device was assessed through the degradation of 2,4-D and BPA in air-equilibrated aqueous media and in oxygen-saturated aqueous media. Enhanced degradation of these two xenoestrogenic toxins was achieved by increasing the number of W-MDEL devices while keeping constant the microwave radiation feeding each W-MDEL lamp. This novel lamp provides an additional light source in the photooxidation of environmental contaminants without the need for a metal-oxide photocatalyst. Under our conditions, process dynamics using the W-MDEL light source are greater than with the more conventional photochemical methods that employ low-pressure Hg arc electrode lamps in synthetic

The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Zhan, Y.Q. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: yqzhan@fudan.edu.cn; Zhou, J. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhou, Y.C. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Wu, Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Yang, H. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Li, F.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Ding, X.M. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou, X.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: xyhou@fudan.edu.cn

2007-05-07

A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light.

The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

International Nuclear Information System (INIS)

Zhan, Y.Q.; Zhou, J.; Zhou, Y.C.; Wu, Y.; Yang, H.; Li, F.Y.; Ding, X.M.; Hou, X.Y.

2007-01-01

A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light

Influence of ITO patterning on reliability of organic light emitting devices

International Nuclear Information System (INIS)

Wang, Zhaokui; Naka, Shigeki; Okada, Hiroyuki

2009-01-01

Indium tin oxide (ITO) films are widely used for a transparent electrode of organic light emitting devices (OLEDs) because of its excellent conductivity and transparency. Two types of ITO substrates with different surface roughness were selected to use as anode of OLEDs. In addition, two types of etching process of ITO substrate, particularly the etching time, were also carried out. It was found that the surface roughness and/or the etching process of ITO substrate strongly influenced on an edge of ITO surface, further affected the operating characteristics and reliability of devices.

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

2016-09-07

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

Three-peak standard white organic light-emitting devices for solid-state lighting

Science.gov (United States)

Guo, Kunping; Wei, Bin

2014-12-01

Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

Interband cascade light emitting devices based on type-II quantum wells

International Nuclear Information System (INIS)

Yang, Rui Q.; Lin, C.H.; Murry, S.J.

1997-01-01

The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 μm)

Robust Visible and Infrared Light Emitting Devices Using Rare-Earth-Doped GaN

National Research Council Canada - National Science Library

Steckl, Andrew

2006-01-01

Rare earth (RE) dopants (such as Er, Eu, Tm) in the wide bandgap semiconductor (WBGS) GaN are investigated for the fabrication of robust visible and infrared light emitting devices at a variety of wavelengths...

Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

International Nuclear Information System (INIS)

Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.

2009-01-01

We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼10 3 and a current density greater than 2 A/cm 2 . Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.

Red light emitting solid state hybrid quantum dot-near-UV GaN LED devices

International Nuclear Information System (INIS)

Song, Hongjoo; Lee, Seonghoon

2007-01-01

We produced core-shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method-an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device

Capturing triplet emission in white organic light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Singh, Jai [Faculty of EHSE, School of Engineering and IT, B-purple-12, Charles Darwin University, Darwin, NT 0909 (Australia)

2011-08-15

The state-of-the art in the white organic light emitting devices (WOLEDs) is reviewed for further developments with a view to enhance the capture of triplet emission. In particular, applying the new exciton-spin-orbit-photon interaction operator as a perturbation, rates of spontaneous emission are calculated in a few phosphorescent materials and compared with experimental results. For iridium based phosphorescent materials the rates agree quite well with the experimental results. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

Science.gov (United States)

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

Energy Technology Data Exchange (ETDEWEB)

Yang, Dan; Duan, Yahui; Yang, Yongqiang [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Hu, Nan [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Wang, Xiao [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Sun, Fengbo [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China); Changchun University of Science and Technology, Changchun 130012 (China); Duan, Yu, E-mail: duanyu@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science & Engineering, Jilin University, Changchun 130012 (China)

2015-10-15

In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C{sup 2'}) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors.

Application of exciplex in the fabrication of white organic light emitting devices with mixed fluorescent and phosphorescent layers

International Nuclear Information System (INIS)

Yang, Dan; Duan, Yahui; Yang, Yongqiang; Hu, Nan; Wang, Xiao; Sun, Fengbo; Duan, Yu

2015-01-01

In this study, a highly efficient fluorescent/phosphorescent white organic light-emitting device (WOLED) was fabricated using exciplex light emission. The hole-transport material 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), and electron-transport material, 4,7-diphenyl-1,10-phenanthroline (Bphen), were mixed to afford a blue-emitting exciplex. The WOLED was fabricated with a yellow phosphorescent dye, Ir(III) bis(4-phenylthieno [3,2-c] pyridinato-N,C 2' ) acetylacetonate (PO-01), combined with the exciplex. In this structure, the energy can be efficiently transferred from the blend layer to the yellow phosphorescent dye, thus improving the efficiency of the utilization of the triplet exciton. The maximum power efficiency of the WOLED reached a value 9.03 lm/W with an external quantum efficiency of 4.3%. The Commission Internationale de I'Eclairage (CIE) color coordinates (x,y) of the device were from (0.39, 0.45) to (0.27, 0.31), with a voltage range of 4–9 V. - Highlights: • An exciplex/phosphorescence hybrid white OLED was fabricated for the first time with blue/orange complementary emitters. • By using exciplex as the blue emitter, non-radiative triplet-states on the exciplex can be harvested for light-emission by transferring them to low triplet-state phosphors

High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

Energy Technology Data Exchange (ETDEWEB)

Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

2012-03-30

Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

Efficient light-emitting devices based on platinum-complexes-anchored polyhedral oligomeric silsesquioxane materials

KAUST Repository

Yang, Xiaohui

2010-08-24

The synthesis, photophysical, and electrochemical characterization of macromolecules, consisting of an emissive platinum complex and carbazole moieties covalently attached to a polyhedral oligomeric silsesquioxane (POSS) core, is reported. Organic light-emitting devices based on these POSS materials exhibit a peak external quantum efficiency of ca. 8%, which is significantly higher than that of the analogous devices with a physical blend of the platinum complexes and a polymer matrix, and they represent noticeable improvement in the device efficiency of solution-processable phosphorescent excimer devices. Furthermore, the ratio of monomer and excimer/aggregate electroluminescent emission intensity, as well as the device efficiency, increases as the platinum complex moiety presence on the POSS macromolecules decreases. © 2010 American Chemical Society.

White organic light-emitting devices based on blue fluorescent dye combined with dual sub-monolayer

Energy Technology Data Exchange (ETDEWEB)

Yang, Huishan, E-mail: yanghuishan1697@163.com

2013-10-15

White organic light-emitting devices have been realized by using highly blue fluorescent dye 4,4′-Bis(2,2-diphenyl-ethen-1-yl)-4,4′-di-(tert-butyl)phenyl(p-TDPVBi) and [2-methyl-6-[2-(2, 3,6,7-tetrahydro-1H, red fluorescent dye 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile(DCM2), together with well known green fluorescent dye quinacridone (QAD). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. The structure of the device is ITO/m-MTDATA (45 nm)/NPB(8 nm)/p-TDPVBi(15 nm)/DCM2(x nm)/Alq{sub 3} (5 nm)/QAD(y nm)/Alq{sub 3}(55 nm)/LiF(1 nm)/Al, where 4,4′,4′′-tris{N,-(3-methylphenyl)-N-phenylamine}triphenylamine (m-MTDATA) acts as a hole injection layer, N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biph-enyl-4, 4′-diamine (NPB) acts as a hole transport layer, p-TDPVBi acts as a blue emitting layer, DCM2 acts as a red emitting layer, QAD acts as a green emitting layer, tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) acts as an electron transport layer, and WOLEDs of devices A, B, C and D are different in layer thickness of DCM2 and QAD, respectively. To change the thickness of dual sub-monolayer DCM2 and QAD, the WOLEDs were obtained. When x, y=0.05, 0.1, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.4458, 0.4589) at 3 V to (0.3137, 0.3455) at 12 V that are well in the white region, and the color temperature and color rendering index were 5348 K and 85 at 8 V, respectively. Its maximum luminance was 35260 cd/m{sup 2} at 12 V, and maximum current efficiency and maximum power efficiency were 13.54 cd/A at 12 V and 6.68 lm/W at 5 V, respectively. Moreover, the current efficiency is largely insensitive to the applied voltage. The electroluminescence intensity of white EL devices varied only little at deferent dual sub-monolayer. Device D exhibited relatively high color rendering index (CRI) in the range of 88–90, which was essentially

Radiation area monitor device and method

Science.gov (United States)

Vencelj, Matjaz; Stowe, Ashley C.; Petrovic, Toni; Morrell, Jonathan S.; Kosicek, Andrej

2018-01-30

A radiation area monitor device/method, utilizing: a radiation sensor; a rotating radiation shield disposed about the radiation sensor, wherein the rotating radiation shield defines one or more ports that are transparent to radiation; and a processor operable for analyzing and storing a radiation fingerprint acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor. Optionally, the radiation sensor includes a gamma and/or neutron radiation sensor. The device/method selectively operates in: a first supervised mode during which a baseline radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor; and a second unsupervised mode during which a subsequent radiation fingerprint is acquired by the radiation sensor as the rotating radiation shield is rotated about the radiation sensor, wherein the subsequent radiation fingerprint is compared to the baseline radiation fingerprint and, if a predetermined difference threshold is exceeded, an alert is issued.

Influence of doping location and width of dimethylquinacridone on the performance of organic light emitting devices

International Nuclear Information System (INIS)

Li Jingze; Yahiro, Masayuki; Ishida, Kenji; Matsushige, Kazumi

2005-01-01

The influence of doping location and width of fluorescent dimethylquinacridone (DMQA) molecules on the performance of organic light emitting devices has been systematically investigated. While the doped zone is located at the interface of the hole transport layer (HTL) and the light emitting layer (EML), doping in the HTL leads to significant improvement of the external quantum efficiency relative to the undoped device, whereas the efficiency is lower than that of doping in the EML. This phenomenon is explained according to the electroluminescence (EL) process of the doped DMQA, which is dominated by Foerster energy transfer. Additionally, a device with dual doping in both HTL and EML exhibits the highest efficiency. The EL and photoluminescence spectra are also dependent on the doping sites

Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

International Nuclear Information System (INIS)

Sun, Ke-Xun; MacNeil, Lawrence; Balakrishnan, Kathik; Hultgren, Eric; Goebel, John; Bilenko, Yuri; Yang, Jinwei; Sun, Wenhong; Shatalov, Max; Hu, Xuhong; Gaska, Remis

2010-01-01

Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 10 15 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 10 12 protons/cm 2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shielding is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2 x 10 12 protons/cm 2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

Neutron emission from 9Be nucleus under the action of β+ and γ radiation emitted in radioactive decay

International Nuclear Information System (INIS)

Vo Dak Bang; Gangrskij, Yu.P.; Miller, M.B.; Mikhajlov, L.V.; Fam Zui Khien; Kharisov, I.F.

1980-01-01

The neutron yield from the 9 Be nucleus under the action of beta and gamma-radiation emitted at the radiative decay of 11 C, 62 Cu, 66 Ga, 74 Br isotopes is measured. These isotopes differ essentially by the emitted radiation spectra. The contribution of various processes ((γ, n)-reactions, inelastic scattering and positron nonradiative annihilation) to the neutron yield observed is determined [ru

Radiation flux measuring device

International Nuclear Information System (INIS)

Corte, E.; Maitra, P.

1977-01-01

A radiation flux measuring device is described which employs a differential pair of transistors, the output of which is maintained constant, connected to a radiation detector. Means connected to the differential pair produce a signal representing the log of the a-c component of the radiation detector, thereby providing a signal representing the true root mean square logarithmic output. 3 claims, 2 figures

Device model investigation of bilayer organic light emitting diodes

International Nuclear Information System (INIS)

Crone, B. K.; Davids, P. S.; Campbell, I. H.; Smith, D. L.

2000-01-01

Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. (c) 2000 American Institute of Physics

Enhancing light out-coupling of organic light-emitting devices using indium tin oxide-free low-index transparent electrodes

Energy Technology Data Exchange (ETDEWEB)

Huang, Yi-Hsiang; Lu, Chun-Yang; Tsai, Shang-Ta; Tsai, Yu-Tang; Chen, Chien-Yu; Tsai, Wei-Lung; Lin, Chun-Yu; Chang, Hong-Wei; Lee, Wei-Kai; Jiao, Min; Wu, Chung-Chih, E-mail: wucc@ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Electronics Engineering, and Innovative Photonics Advanced Research Center (i-PARC), National Taiwan University, Taipei 10617, Taiwan (China)

2014-05-05

With its increasing and sufficient conductivity, the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been capable of replacing the widely used but less cost-effective indium tin oxides (ITOs) as alternative transparent electrodes for organic light-emitting devices (OLEDs). Intriguingly, PEDOT:PSS also possesses an optical refractive index significantly lower than those of ITO and typical organic layers in OLEDs and well matching those of typical OLED substrates. Optical simulation reveals that by replacing ITO with such a low-index transparent electrode, the guided modes trapped within the organic/ITO layers in conventional OLEDs can be substantially suppressed, leading to more light coupled into the substrate than the conventional ITO device. By applying light out-coupling structures onto outer surfaces of substrates to effectively extract radiation into substrates, OLEDs using such low-index transparent electrodes achieve enhanced optical out-coupling and external quantum efficiencies in comparison with conventional OLEDs using ITO.

Efficient fluorescent deep-blue and hybrid white emitting devices based on carbazole/benzimidazole compound

KAUST Repository

Yang, Xiaohui; Zheng, Shijun; Bottger, Rebecca; Chae, HyunSik; Tanaka, Takeshi; Li, Sheng; Mochizuki, Amane; Jabbour, Ghassan E.

2011-01-01

We report the synthesis, photophysics, and electrochemical characterization of carbazole/benzimidazole-based compound (Cz-2pbb) and efficient fluorescent deep-blue light emitting devices based on Cz-2pbb with the peak external quantum efficiency

Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsu, C.M. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)], E-mail: tedhsu@mail.stut.edu.tw; Kuo, C.S.; Hsu, W.C.; Wu, W.T. [Southern Taiwan University, Department of Electro-Optical Engineering, 1 Nan-Tai St, Yung-Kang City, Tainan County 710, Taiwan (China)

2009-01-01

This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices.

Efficiency optimization of green phosphorescent organic light-emitting device

Energy Technology Data Exchange (ETDEWEB)

Park, Jung Soo; Jeon, Woo Sik; Yu, Jae Hyung [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Pode, Ramchandra, E-mail: rbpode@khu.ac.k [Department of Physics, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Kwon, Jang Hyuk, E-mail: jhkwon@khu.ac.k [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of)

2011-03-01

Using a narrow band gap host of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp{sub 2}) and green phosphorescent Ir(ppy){sub 3} [fac-tris(2-phenylpyridine) iridium III] guest concentration as low as 2%, high efficiency phosphorescent organic light-emitting diode (PHOLED) is realized. Current and power efficiencies of 62.5 cd/A (max.), 51.0 lm/W (max.), and external quantum efficiency (max.) of 19.8% are reported in this green PHOLED. A low current efficiency roll-off value of 10% over the brightness of 10,000 cd/m{sup 2} is noticed in this Bepp{sub 2} single host device. Such a high efficiency is obtained by the optimization of the doping concentration with the knowledge of the hole trapping and the emission zone situations in this host-guest system. It is suggested that the reported device performance is suitable for applications in high brightness displays and lighting.

OLED Fundamentals: Materials, Devices, and Processing of Organic Light-Emitting Diodes

Energy Technology Data Exchange (ETDEWEB)

Blochwitz-Nimoth, Jan; Bhandari, Abhinav; Boesch, Damien; Fincher, Curtis R.; Gaspar, Daniel J.; Gotthold, David W.; Greiner, Mark T.; Kido, Junji; Kondakov, Denis; Korotkov, Roman; Krylova, Valentina A.; Loeser, Falk; Lu, Min-Hao; Lu, Zheng-Hong; Lussem, Bjorn; Moro, Lorenza; Padmaperuma, Asanga B.; Polikarpov, Evgueni; Rostovtsev, Vsevolod V.; Sasabe, Hisahiro; Silverman, Gary; Thompson, Mark E.; Tietze, Max; Tyan, Yuan-Sheng; Weaver, Michael; Xin , Xu; Zeng, Xianghui

2015-05-26

What is an organic light emitting diode (OLED)? Why should we care? What are they made of? How are they made? What are the challenges in seeing these devices enter the marketplace in various applications? These are the questions we hope to answer in this book, at a level suitable for knowledgeable non-experts, graduate students and scientists and engineers working in the field who want to understand the broader context of their work. At the most basic level, an OLED is a promising new technology composed of some organic material sandwiched between two electrodes. When current is passed through the device, light is emitted. The stack of layers can be very thin and has many variations, including flexible and/or transparent. The organic material can be polymeric or composed small molecules, and may include inorganic components. The electrodes may consist of metals, metal oxides, carbon nanomaterials, or other species, though of course for light to be emitted, one electrode must be transparent. OLEDs may be fabricated on glass, metal foils, or polymer sheets (though polymeric substrates must be modified to protect the organic material from moisture or oxygen). In any event, the organic material must be protected from moisture during storage and operation. A control circuit, the exact nature of which depends on the application, drives the OLED. Nevertheless, the control circuit should have very stable current control to generate uniform light emission. OLEDs can be designed to emit a single color of light, white light, or even tunable colors. The devices can be switched on and off very rapidly, which makes them suitable for displays or for general lighting. Given the amazing complexity of the technical and design challenges for practical OLED applications, it is not surprising that applications are still somewhat limited. Although organic electroluminescence is more than 50 years old, the modern OLED field is really only about half that age – with the first high

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

On the Properties and Design of Organic Light-Emitting Devices

Science.gov (United States)

Erickson, Nicholas C.

Organic light-emitting devices (OLEDs) are attractive for use in next-generation display and lighting technologies. In display applications, OLEDs offer a wide emission color gamut, compatibility with flexible substrates, and high power efficiencies. In lighting applications, OLEDs offer attractive features such as broadband emission, high-performance, and potential compatibility with low-cost manufacturing methods. Despite recent demonstrations of near unity internal quantum efficiencies (photons out per electron in), OLED adoption lags conventional technologies, particularly in large-area displays and general lighting applications. This thesis seeks to understand the optical and electronic properties of OLED materials and device architectures which lead to not only high peak efficiency, but also reduced device complexity, high efficiency under high excitation, and optimal white-light emission. This is accomplished through the careful manipulation of organic thin film compositions fabricated via vacuum thermal evaporation, and the introduction of a novel device architecture, the graded-emissive layer (G-EML). This device architecture offers a unique platform to study the electronic properties of varying compositions of organic semiconductors and the resulting device performance. This thesis also introduces an experimental technique to measure the spatial overlap of electrons and holes within an OLED's emissive layer. This overlap is an important parameter which is affected by the choice of materials and device design, and greatly impacts the operation of the OLED at high excitation densities. Using the G-EML device architecture, OLEDs with improved efficiency characteristics are demonstrated, achieving simultaneously high brightness and high efficiency.

Silicon solid state devices and radiation detection

CERN Document Server

Leroy, Claude

2012-01-01

This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers stateof- the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application.

Efficient white organic light-emitting devices using a thin 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl layer

International Nuclear Information System (INIS)

Wang Jun; Yu Junsheng; Li Lu; Tang Xiaoqing; Jiang Yadong

2008-01-01

White organic light-emitting devices (OLEDs) were fabricated using phosphorescent material bis[2-(4-tert-butylphenyl)benzothiazolato-N,C 2' ]iridium (acetylacetonate) [(t-bt) 2 Ir(acac)] doped in 4,4'-bis(carbazol-9-yl) biphenyl (CBP) matrix as a yellow light-emitting layer and a thin layer 4,4'-bis(2,2'-diphenylvinyl)-1,1'-diphenyl (DPVBi) as the blue light-emitting layer. The light colour of the OLEDs can be adjusted by changing doped concentration and the thickness of the DPVBi thin layer. The maximum luminance and power efficiency of 5% doped device reached 15 460 cd m -2 and 8.1 lm W -1 , respectively. The 3% doped device showed the CIE coordinates of (0.344, 0.322) at 8 V and a maximum power efficiency of 5.7 lm W -1 at 4.5 V

Radiation-Tolerance Assessment of a Redundant Wireless Device

Science.gov (United States)

Huang, Q.; Jiang, J.

2018-01-01

This paper presents a method to evaluate radiation-tolerance without physical tests for a commercial off-the-shelf (COTS)-based monitoring device for high level radiation fields, such as those found in post-accident conditions in a nuclear power plant (NPP). This paper specifically describes the analysis of radiation environment in a severe accident, radiation damages in electronics, and the redundant solution used to prolong the life of the system, as well as the evaluation method for radiation protection and the analysis method of system reliability. As a case study, a wireless monitoring device with redundant and diversified channels is evaluated by using the developed method. The study results and system assessment data show that, under the given radiation condition, performance of the redundant device is more reliable and more robust than those non-redundant devices. The developed redundant wireless monitoring device is therefore able to apply in those conditions (up to 10 M Rad (Si)) during a severe accident in a NPP.

Radiation sterilization of medical devices

International Nuclear Information System (INIS)

Kaluska, I.; Stuglik, Z.

1996-01-01

Overview of sterilization methods of medical devices has been given, with the special stress put on radiation sterilization. A typical validation program for radiation sterilization has been shown and also a comparison of European and ISO standards concerning radiation sterilization has been discussed. (author). 13 refs, 1 fig., 2 tabs

[White organic light emitting device with dyestuff DCJTB blended in polymer].

Science.gov (United States)

Zhang, Yan-Fei; Xu, Zheng; Zhang, Fu-Jun; Wang, Yong; Zhao, Su-Ling

2008-04-01

The Alq3 and DCJTB were blended with poly (N-vinylcarbazole) (PVK) in different weight ratios and spin coated into films. Multilayer devices with the light emitting layer PVK : Alq3 : DCJTB were fabricated, and their structure was ITO/ PVK : Alq3 : DCJTB/ BCP/Alq3/LiF/Al in which BCP and Alq3 were employed as the hole-blocking and electron-transporting layers respectively, PVK is the blue light-emitting as well as hole-transporting layer. The mass proportion of PVK relative to Alq3 was tuned while the quality ratio of PVK to DCJTB remained (100 : 1). Finally, fairly pure and stabile white emission was achieved when PVK : Alq3 : DCJTB was 100 : 5 : 1. The CIE coordinate was (0.33, 0.36) at 14 V, which is very stable at various biases (10-14 V).

Radiative flux emitted by a burning PMMA slab

International Nuclear Information System (INIS)

Parent, G; Acem, Z; Collin, A; Berfroi, R; Boulet, P; Pizzo, Y; Mindykowski, P; Kaiss, A; Porterie, B

2012-01-01

The degradation of a PMMA sample has been studied based on experimental results obtained for the radiation emission by a burning slab. Observations of the infrared emission perpendicular to the plate, in the range where the optically thin flame is weakly emitting, indicate a plate temperature close to 680 K which is an indication on the surface temperature during the degradation process. Observations from the side allow a flame characterization without the plate emission superimposition. This is a promising way for evaluating data regarding the flame characteristics: temperature, gaz concentration and soot volumetric fraction.

Geometric radiation exchange factors for axial radiative transfer in an LWR core filled with absorbing-emitting gases

International Nuclear Information System (INIS)

Chan, S.H.; Cho, D.H.

1984-01-01

A reactor core filled with an emitting-absorbing mixture (like steam, hydrogen gas and fission gases) is considered. Analysis is provided to evaluate axial radiative heat exchange of a rod bundle with a nonuniform axial temperature distribution. The necessary radiation exchange shape factors (geometric mean absorptance, emittance and transmittance) between segments of the complex rod bundle arrangement are presented. They are applicable to arbitrary sizes of segments, well suited for numerical computations

Radiation monitoring device

International Nuclear Information System (INIS)

Sato, Toshifumi.

1993-01-01

The device of the present invention concerns a reactor start-up region monitor of a nuclear power plant. In an existent start-up region monitor, bias voltage is limited, if the reactor moves to a power region, in order to prevent degradation of radiation detectors. Accordingly, since the power is lower than an actual reactor power, the reactor power can not be monitored. The device of the present invention comprises a memory means for previously storing a Plateau's characteristic of the radiation detectors and a correction processing means for obtaining a correction coefficient in accordance with the Plateau's characteristic to correct and calculate the reactor power when the bias voltage is limited. With such a constitution, when the reactor power exceeds a predetermined value and the bias voltage is limited, the correction coefficient can be obtained by the memory means and the correction processing means. Corrected reactor power can also be obtained from the start-up region monitor by the correction coefficient. As a result, monitoring of the reactor power can be continued while preventing degradation of the radiation detector even if the bias voltage is limited. (I.S.)

Radiation effects in charge coupled devices

International Nuclear Information System (INIS)

Williams, R.A.; Nelson, R.D.

1975-01-01

Charge coupled devices (CCD s) exhibit a number of advantages (low cost, low power, high bit density) in their several applications (serial memories, imagers, digital filters); however, fairly elementary theoretical considerations indicate that they will be very vulnerable to permanent radiation damage, by both neutrons and ionizing radiation, and to transient upset by pulsed ionizing radiation. Although studies of permanent ionizing-radiation damage in CCD's have been reported, little information has been published concerning their overall nuclear radiation vulnerability. This paper presents a fairly comprehensive experimental study of radiation effects in a 256-cell surface-channel, CCD shift-register. A limited amount of similar work is also presented for a 128-cell surface-channel device and a 130 cell peristaltic CCD shift register. The radiation effects phenomena discussed herein, include transient-ionizing-radiation responses, permanent ionizing- radiation damage to transfer efficiency, charge-carrying capacity and input transfer gate bias, and neutron damage to storage time--determined from dark current and charge-up time measurements

Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

Directory of Open Access Journals (Sweden)

Madhava Rao MV

2009-01-01

Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

Radiation Control Act 1977 - No 66 of 1977

International Nuclear Information System (INIS)

1977-01-01

This Act regulates the use of radioactive materials and radiation-emitting devices. It sets up a Radiation Advisory Council to advise the competent authorities on questions within the scope of the Act, also with a view to radiation protection. The Act also lays down a licensing system for such materials and devices. The Radioactive Substances Acts 1954 and 1966 are repealed. (NEA) [fr

Study on scalable Coulombic degradation for estimating the lifetime of organic light-emitting devices

International Nuclear Information System (INIS)

Zhang Wenwen; Hou Xun; Wu Zhaoxin; Liang Shixiong; Jiao Bo; Zhang Xinwen; Wang Dawei; Chen Zhijian; Gong Qihuang

2011-01-01

The luminance decays of organic light-emitting diodes (OLEDs) are investigated with initial luminance of 1000 to 20 000 cd m -2 through a scalable Coulombic degradation and a stretched exponential decay. We found that the estimated lifetime by scalable Coulombic degradation deviates from the experimental results when the OLEDs work with high initial luminance. By measuring the temperature of the device during degradation, we found that the higher device temperatures will lead to instabilities of organic materials in devices, which is expected to result in the difference between the experimental results and estimation using the scalable Coulombic degradation.

Optoelectronic device with nanoparticle embedded hole injection/transport layer

Science.gov (United States)

Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

2012-01-03

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

Counterbalanced radiation detection device

International Nuclear Information System (INIS)

Platz, W.

1986-01-01

A counterbalanced radiation detection device is described which consists of: (a) a base; (b) a radiation detector having a known weight; (c) means connected with the radiation detector and the base for positioning the radiation detector in different heights with respect to the base; (d) electronic component means movably mounted on the base for counterbalancing the weight of the radiation detector; (e) means connected with the electronic component means and the radiation detector positioning means for positioning the electronic component means in different heights with respect to the base opposite to the heights of the radiation detector; (f) means connected with the radiation detector and the base for shifting the radiation detector horizontally with respect to the base; and (g) means connected with the electronic component means and the radiation detector shifting means for shifting the electronic component means horizontally with respect to the base in opposite direction to shifting of the radiation detector

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

International Nuclear Information System (INIS)

Park, Jong Hyeok; Kim, Chulhee; Kim, Young Chul

2009-01-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

Energy Technology Data Exchange (ETDEWEB)

Park, Jong Hyeok [Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Chulhee [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Young Chul, E-mail: kimyc@khu.ac.k [Department of Chemical Engineering and RIC-CAMID, Kyung Hee University, Yongin-si, Kyunggi-do 499-701 (Korea, Republic of)

2009-02-07

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

Science.gov (United States)

Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

2009-02-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

Science.gov (United States)

Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

2018-02-01

We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

Green Fluorescent Organic Light Emitting Device with High Luminance

Directory of Open Access Journals (Sweden)

Ning YANG

2014-06-01

Full Text Available In this work, we fabricated the small molecule green fluorescent bottom-emission organic light emitting device (OLED with the configuration of glass substrate/indium tin oxide (ITO/Copper Phthalocyanine (CuPc 25 nm/ N,N’-di(naphthalen-1-yl-N,N’-diphenyl-benzidine (NPB 45 nm/ tris(8-hydroxyquinoline aluminium (Alq3 60 nm/ Lithium fluoride (LiF 1 nm/Aluminum (Al 100 nm where CuPc and NPB are the hole injection layer and the hole transport layer, respectively. CuPc is introduced in this device to improve carrier injection and efficiency. The experimental results indicated that the turn-on voltage is 2.8 V with a maximum luminance of 23510 cd/m2 at 12 V. The maximum current efficiency and power efficiency are 4.8 cd/A at 100 cd/m2 and 4.2 lm/W at 3 V, respectively. The peak of electroluminance (EL spectrum locates at 530 nm which is typical emission peak of green light. In contrast, the maximum current efficiency and power efficiency of the device without CuPc are only 4.0 cd/A at 100 mA/cm2 and 4.2 lm/W at 3.6 V, respectively.

Radiation Protection, Safety and Security Issues in Ghana

International Nuclear Information System (INIS)

Boadu, M. B.; Emi-Reynolds, G.; Amoako, J. K.; Hasford, F.; Akrobortu, E.

2015-01-01

The Radiation Protection Board was established in 1993 by PNDC Law 308 as the National Competent Authority for the regulation of radiation sources and radioactive materials in Ghana. The mandate and responsibilities of RPB are prescribed in the legislative instrument, LI 1559 issued in 1993. The operational functions of the Board are carried out by the Radiation Protection Institute, which was established to provide technical support for the enforcement of the legislative instrument. The regulatory activities include among others: – Issuance permits for the import/export of any radiation producing device and radioactive materials into/out of the country. It therefore certifies the radioactivity levels in food and the environmental samples. – Authorization and Inspection of practices using radiation sources and radioactive materials in Ghana. – Undertakes safety assessment services and enforcement actions on practices using radiation sources and radioactive materials in line with regulations. – Provides guidance and technical support in fulfilling regulatory requirement to users of radiation producing devices and radioactive materials nationwide by monitoring of monthly radiation absorbed doses for personnel working at radiation facilities. – Provides support to the management of practices in respect of nuclear and radioactive waste programme. – Calibrates radiation emitting equipment and nuclear instrumentation to ensure the safety of patients, workers and the general public. – Establish guidelines for the mounting (non-ionizing) communication masts. – Environmental monitoring (non-ionizing) programmes for communication masts. With the establishment of the national competent authority, facilities using radioactive sources and radiation emitting devices have been brought under regulatory control. Effective regulatory control of radiation emitting devices are achieved through established legal framework, independent Regulatory Authority supported by

Exposure to Radiofrequency Radiation Emitted from Common Mobile Phone Jammers Alters the Pattern of Muscle Contractions: an Animal Model Study

Directory of Open Access Journals (Sweden)

Rafati A.

2015-09-01

Full Text Available Introduction: The rapid growth of wireless communication technologies has caused public concerns regarding the biological effects of electromagnetic radiations on human health. Some early reports indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians such as the alterations of the pattern of muscle extractions. This study is aimed at investigating the effects of exposure to radiofrequency (RF radiation emitted from mobile phone jammers on the pulse height of contractions, the time interval between two subsequent contractions and the latency period of frog’s isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz. Materials and Methods: Frogs were kept in plastic containers in a room. Animals in the jammer group were exposed to radiofrequency (RF radiation emitted from a common Jammer at a distance of 1m from the jammer’s antenna for 2 hours while the control frogs were only sham exposed. Then animals were sacrificed and isolated gastrocnemius muscles were exposed to on/off jammer radiation for 3 subsequent 10 minute intervals. Isolated gastrocnemius muscles were attached to the force transducer with a string. Using a PowerLab device (26-T, the pattern of muscular contractions was monitored after applying single square pulses of 1V (1 Hz as stimuli. Results: The findings of this study showed that the pulse height of muscle contractions could not be affected by the exposure to electromagnetic fields. However, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. Conclusion: These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions.

Exposure to Radiofrequency Radiation Emitted from Common Mobile Phone Jammers Alters the Pattern of Muscle Contractions: an Animal Model Study.

Science.gov (United States)

Rafati, A; Rahimi, S; Talebi, A; Soleimani, A; Haghani, M; Mortazavi, S M J

2015-09-01

The rapid growth of wireless communication technologies has caused public concerns regarding the biological effects of electromagnetic radiations on human health. Some early reports indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians such as the alterations of the pattern of muscle extractions. This study is aimed at investigating the effects of exposure to radiofrequency (RF) radiation emitted from mobile phone jammers on the pulse height of contractions, the time interval between two subsequent contractions and the latency period of frog's isolated gastrocnemius muscle after stimulation with single square pulses of 1V (1 Hz). Frogs were kept in plastic containers in a room. Animals in the jammer group were exposed to radiofrequency (RF) radiation emitted from a common Jammer at a distance of 1m from the jammer's antenna for 2 hours while the control frogs were only sham exposed. Then animals were sacrificed and isolated gastrocnemius muscles were exposed to on/off jammer radiation for 3 subsequent 10 minute intervals. Isolated gastrocnemius muscles were attached to the force transducer with a string. Using a PowerLab device (26-T), the pattern of muscular contractions was monitored after applying single square pulses of 1V (1 Hz) as stimuli. The findings of this study showed that the pulse height of muscle contractions could not be affected by the exposure to electromagnetic fields. However, the latency period was effectively altered in RF-exposed samples. However, none of the experiments could show an alteration in the time interval between two subsequent contractions after exposure to electromagnetic fields. These findings support early reports which indicated a wide variety of non-thermal effects of electromagnetic radiation on amphibians including the effects on the pattern of muscle extractions.

Bigger, Brighter, Bluer-Better?Current light-emitting devices- adverse sleep properties and preventative strategies.

Directory of Open Access Journals (Sweden)

Paul eGringras

2015-10-01

Full Text Available ObjectiveIn an effort to enhance the efficiency, brightness and contrast of light-emitting (LE devices during the day, displays often generate substantial short-wavelength (blue-enriched light emissions that can adversely affect sleep. We set out to verify the extent of such short-wavelength emissions, produced by a tablet (iPad Air, e-reader (Kindle Paperwhite 1st generation and smartphone (iPhone 5s and to determine the impact of strategies designed to reduce these light emissions. SettingUniversity of Surrey dedicated chronobiology facility.MethodsFirstly, the spectral power of all the light-emitting (LE devices was assessed when displaying identical text. Secondly, we compared the text output with that of ‘Angry Birds’-a popular top 100 ‘App Store’ game. Finally we measured the impact of two strategies that attempt to reduce the output of short-wavelength light emissions. The first strategy employed an inexpensive commercially available pair of orange-tinted ‘blue-blocking’ glasses. The second tested an app designed to be ‘sleep-aware’ whose designers deliberately attempted to reduce blue-enriched light emissions.ResultsAll the LE devices shared very similar enhanced blue-light peaks when displaying text. This included the output from the backlit Kindle Paperwhite device. The spectra when comparing text to the Angry Birds game were also very similar, although the

Prospects of radiation sterilization of medical devices

International Nuclear Information System (INIS)

Hosobuchi, Kazunari

1992-01-01

Since radiation sterilization was first introduced in the United States in 1956 in the field of disposable medical devices, it has become an indispensable technique for sterilization because of the following reasons: (1) introduction into dialyzers, (2) introduction in medical device makers, (3) development of disposable medical devices associated with developing both high molecular chemistry and cool sterilization, (4) rationality of sterilization process, and (5) problems of sterilization with ethylene oxide gas. To promote the further development of radiation sterilization, the following items are considered necessary: (1) an increase in the number of facilities for radiation sterilization, (2) recommendation of the international standardization of sterilization method, (3) decrease in radiation doses associated with sterilization, (4) development of electron accelerators and bremsstrahlung equipments for radiation sources, and (5) simplification of sterilization process management. Factors precluding the development of radiation sterilization are: (1) development of other methods than radiation sterilization, (2) development of technique for sterile products, (3) high facility cost, (4) high irradiation cost, (5) benefits and limits of sterilization markets, and (6) influences of materials. (N.K.)

Radiation hardening of MOS devices by boron

International Nuclear Information System (INIS)

Danchenko, V.

1975-01-01

A novel technique is disclosed for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device of the type having a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. In the preferred embodiment, the novel inventive technique contemplates the introduction of boron into the insulating oxide, the boron being introduced within a layer of the oxide of about 100A to 300A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 atoms/ cm 3 . The novel technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations, which accumulations, if not eliminated, would cause shifting of the gate threshold potential of a radiation subjected MOS device, and thus render the device unstable and/or inoperative. (auth)

Top emitting white OLEDs

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

2009-07-01

Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

Specification for symbol for ionizing radiation

International Nuclear Information System (INIS)

1974-01-01

This Malaysia Standard specification specifies a symbol recommended for use only to signify the actual or potential presence of ionizing radiation (#betta#, α, #betta# only) and to identify objects, devices, materials or combinations of materials which emit such radiation. (author)

Colloidal quantum dot light-emitting devices

Directory of Open Access Journals (Sweden)

Vanessa Wood

2010-07-01

Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

Miniaturized radiation chirper

International Nuclear Information System (INIS)

Umbarger, C.J.; Wolf, M.A.

1980-01-01

A miniaturized radiation chirper for use with a small battery supplying on the order of 5 volts is described. A poor quality CdTe crystal which is not necessarily suitable for high resolution gamma ray spectroscopy is incorporated with appropriate electronics so that the chirper emits an audible noise at a rate that is proportional to radiation exposure level. The chirper is intended to serve as a personnel radiation warning device that utilizes new and novel electronics with a novel detector, a CdTe crystal. The resultant device is much smaller and has much longer battery life than existing chirpers

Ambient fabrication of flexible and large-area organic light-emitting devices using slot-die coating

DEFF Research Database (Denmark)

Sandstrom, Andreas; Dam, Henrik Friis; Krebs, Frederik C

2012-01-01

available in smartphones, but the promise of a continuous ambient fabrication has unfortunately not materialized yet, as organic light-emitting diodes invariably depend on the use of one or more time-and energy-consuming process steps under vacuum. Here we report an all-solution-based fabrication...... of an alternative emissive device, a light-emitting electrochemical cell, using a slot-die roll-coating apparatus. The fabricated flexible sheets exhibit bidirectional and uniform light emission, and feature a fault-tolerant >1-mu m-thick active material that is doped in situ during operation. It is notable...

Radiation detection device and a radiation detection method

International Nuclear Information System (INIS)

Blum, A.

1975-01-01

A radiation detection device is described including at least one scintillator in the path of radiation emissions from a distributed radiation source; a plurality of photodetectors for viewing each scintillator; a signal processing means, a storage means, and a data processing means that are interconnected with one another and connected to said photodetectors; and display means connected to the data processing means to locate a plurality of radiation sources in said distributed radiation source and to provide an image of the distributed radiation sources. The storage means includes radiation emission response data and location data from a plurality of known locations for use by the data processing means to derive a more accurate image by comparison of radiation responses from known locations with radiation responses from unknown locations. (auth)

The effects of cosmic radiation on implantable medical devices

International Nuclear Information System (INIS)

Bradley, P.

1996-01-01

Metal oxide semiconductor (MOS) integrated circuits, with the benefits of low power consumption, represent the state of the art technology for implantable medical devices. Three significant sources of radiation are classified as having the ability to damage or alter the behavior of implantable electronics; Secondary neutron cosmic radiation, alpha particle radiation from the device packaging and therapeutic doses(up to 70 Gγ) of high energy radiation used in radiation oncology. The effects of alpha particle radiation from the packaging may be eliminated by the use of polyimide or silicone rubber die coatings. The relatively low incidence of therapeutic radiation incident on an implantable device and the use of die coating leaves cosmic radiation induced secondary neutron single event upset (SEU) as the main pervasive ionising radiation threat to the reliability of implantable devices. A theoretical model which predicts the susceptibility of a RAM cell to secondary neutron cosmic radiation induced SEU is presented. The model correlates well within the statistical uncertainty associated with both the theoretical and field estimate. The predicted Soft Error Rate (SER) is 4.8 x l0 -12 upsets/(bit hr) compared to an observed upset rate of 8.5 x 10 -12 upsets/(bit hr) from 20 upsets collected over a total of 284672 device days. The predicted upset rate may increase by up to 20% when consideration is given to patients flying in aircraft The upset rate is also consistent with the expected geographical variations of the secondary cosmic ray neutron flux, although insufficient upsets precluded a statistically significant test. This is the first clinical data set obtained indicating the effects of cosmic radiation on implantable devices. Importantly, it may be used to predict the susceptibility of future to the implantable device designs to the effects of cosmic radiation

Medical Devices; General Hospital and Personal Use Devices; Classification of the Ultraviolet Radiation Chamber Disinfection Device. Final order.

Science.gov (United States)

2015-11-20

The Food and Drug Administration (FDA or the Agency) is classifying the ultraviolet (UV) radiation chamber disinfection device into class II (special controls). The special controls that will apply to the device are identified in this order and will be part of the codified language for the UV radiation chamber disinfection device classification. The Agency is classifying the device into class II (special controls) in order to provide a reasonable assurance of safety and effectiveness of the device.

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

International Nuclear Information System (INIS)

Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

2014-01-01

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2014-10-15

Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

Effect of radiofrequency radiation from Wi-Fi devices on mercury release from amalgam restorations.

Science.gov (United States)

Paknahad, Maryam; Mortazavi, S M J; Shahidi, Shoaleh; Mortazavi, Ghazal; Haghani, Masoud

2016-01-01

Dental amalgam is composed of approximately 50% elemental mercury. Despite concerns over the toxicity of mercury, amalgam is still the most widely used restorative material. Wi-Fi is a rapidly using local area wireless computer networking technology. To the best of our knowledge, this is the first study that evaluates the effect of exposure to Wi-Fi signals on mercury release from amalgam restorations. Standard class V cavities were prepared on the buccal surfaces of 20 non-carious extracted human premolars. The teeth were randomly divided into 2 groups (n = 10). The control group was stored in non-environment. The specimens in the experimental groups were exposed to a radiofrequency radiation emitted from standard Wi Fi devices at 2.4 GHz for 20 min. The distance between the Wi-Fi router and samples was 30 cm and the router was exchanging data with a laptop computer that was placed 20 m away from the router. The concentration of mercury in the artificial saliva in the groups was evaluated by using a cold-vapor atomic absorption Mercury Analyzer System. The independent t test was used to evaluate any significant differences in mercury release between the two groups. The mean (±SD) concentration of mercury in the artificial saliva of the Wi-Fi exposed teeth samples was 0.056 ± .025 mg/L, while it was only 0.026 ± .008 mg/L in the non-exposed control samples. This difference was statistically significant (P =0.009). Exposure of patients with amalgam restorations to radiofrequency radiation emitted from conventional Wi-Fi devices can increase mercury release from amalgam restorations.

Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong-Hoon; Lee, Ki-Heon; Jo, Dae-Yeon; Yang, Heesun, E-mail: hyang@hongik.ac.kr [Department of Materials Science and Engineering, Hongik University, Seoul 121-791 (Korea, Republic of); Lee, Yangjin; Hwang, Jun Yeon [Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk 565-905 (Korea, Republic of)

2014-09-29

Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In{sub 1−x}−Ga{sub x}−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

Flexible organic light-emitting device based on magnetron sputtered indium-tin-oxide on plastic substrate

International Nuclear Information System (INIS)

Wong, F.L.; Fung, M.K.; Tong, S.W.; Lee, C.S.; Lee, S.T.

2004-01-01

A radio-frequency sputtering deposition method was applied to prepare indium tin oxide (ITO) on a plastic substrate, polyethylene terephthalate (PET). The correlation of deposition conditions and ITO film properties was systematically investigated and characterized. The optimal ITO films had a transmittance of over 90% in the visible range (400-700 nm) and a resistivity of 5.0x10 -4 Ω-cm. Sequentially α-napthylphenylbiphenyl diamine, tris-(8-hydroxyquinoline) aluminium, and magnesium-silver were thermally deposited on the ITO-coated PET substrate to fabricate flexible organic light-emitting diodes (FOLEDs). The fabricated devices had a maximum current efficiency of ∼4.1 cd/A and a luminance of nearly 4100 cd/m 2 at 100 mA/cm 2 . These values showed that the FOLEDs had comparable performance characteristics with the conventional organic light-emitting diodes made on ITO-coated glasses with the same device configuration

Effects of radiation on MOS structures and silicon devices

International Nuclear Information System (INIS)

Braeunig, D.; Fahrner, W.

1983-02-01

A comprehensive view of radiation effects on MOS structures and silicon devices is given. In the introduction, the interaction of radiation with semiconductor material is presented. In the next section, the electrical degradation of semiconductor devices due to this interaction is discussed. The commonly used hardening techniques are shown. The last section deals with testing of radiation hardness of devices. (orig.) [de

Fabrication and performance of ACTFEL display devices using manganese-doped zinc germanate as a green-emitting electroluminescent layer

International Nuclear Information System (INIS)

Kim, Joo Han; Yoon, Kyung Ho

2010-01-01

Alternating-current thin-film electroluminescent (ACTFEL) display devices fabricated using manganese-doped zinc germanate (Zn 2 GeO 4 :Mn) as a green-emitting electroluminescent layer material are described. The ACTFEL display devices were fabricated with a standard bottom emission structure having a multilayer stack of thin films in the metal/semiconductor/insulator/ metal (MSIM) configuration. The device was constructed on a transparent Corning glass substrate through which the emitted EL light passed. The Zn 2 GeO 4 :Mn emission layer was synthesized by using a RF magnetron sputter deposition method, followed by post-annealing at 700 .deg. C in air ambient for 1 hour. The obtained Zn 2 GeO 4 :Mn films were found to be polycrystalline with a rhombohedral crystal structure. A green emission spectrum with a maximum at approximately 538 nm was produced from the fabricated device. The chromaticity color coordinates of the EL emission were measured to be x = 0.308 and y = 0.657. The device demonstrated a sharp increase in the intensity of green EL emission upon increasing the AC peak voltage applied to the device above a threshold of 148 V.

Perovskite Materials for Light-Emitting Diodes and Lasers.

Science.gov (United States)

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement of a device for monitoring the contamination of surfaces

International Nuclear Information System (INIS)

Barbier, Albert.

1981-01-01

The purpose of this invention is to make it possible to monitor the contamination of surfaces by a light weight portable device and enabling the alpha, beta and gamma radiation contamination to be detected. The detection probe which is connected by a single lead to the box is adapted, in each particular case, to the radiation mode emitted by the contaminated surfaces and the box is provided with a special leak-proof socket for connecting the probe and includes means for assessing the counting rate of the radiation given off, depending on the mode of the radiations emitted by the contaminated surfaces and the intensity of the count rate [fr

Advanced Small Animal Conformal Radiation Therapy Device.

Science.gov (United States)

Sharma, Sunil; Narayanasamy, Ganesh; Przybyla, Beata; Webber, Jessica; Boerma, Marjan; Clarkson, Richard; Moros, Eduardo G; Corry, Peter M; Griffin, Robert J

2017-02-01

We have developed a small animal conformal radiation therapy device that provides a degree of geometrical/anatomical targeting comparable to what is achievable in a commercial animal irradiator. small animal conformal radiation therapy device is capable of producing precise and accurate conformal delivery of radiation to target as well as for imaging small animals. The small animal conformal radiation therapy device uses an X-ray tube, a robotic animal position system, and a digital imager. The system is in a steel enclosure with adequate lead shielding following National Council on Radiation Protection and Measurements 49 guidelines and verified with Geiger-Mueller survey meter. The X-ray source is calibrated following AAPM TG-61 specifications and mounted at 101.6 cm from the floor, which is a primary barrier. The X-ray tube is mounted on a custom-made "gantry" and has a special collimating assembly system that allows field size between 0.5 mm and 20 cm at isocenter. Three-dimensional imaging can be performed to aid target localization using the same X-ray source at custom settings and an in-house reconstruction software. The small animal conformal radiation therapy device thus provides an excellent integrated system to promote translational research in radiation oncology in an academic laboratory. The purpose of this article is to review shielding and dosimetric measurement and highlight a few successful studies that have been performed to date with our system. In addition, an example of new data from an in vivo rat model of breast cancer is presented in which spatially fractionated radiation alone and in combination with thermal ablation was applied and the therapeutic benefit examined.

White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer

Energy Technology Data Exchange (ETDEWEB)

Kim, M.S.; Jeong, C.H.; Lim, J.T. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); Yeom, G.Y. [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyonggi-Do, 440-746 (Korea, Republic of); The National Program for Tera-level Devices, Hawolgok-dong, Sungbuk-gu, Seoul, 136-791 (Korea, Republic of)], E-mail: gyyeom@skku.edu

2008-04-01

White top-emitting organic light-emitting diodes (TEOLEDs) composed of one doped emissive layer which emits two-wavelength light though the radiative recombination were fabricated. As the emissive layer, 4,4-bis(2,2-diphenylethen-1-yl)biphenyl (DPVBi) was used as the host material and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) was added as the dopant material. By optimizing the DCJTB concentration (1.2%) and the thickness of the DPVBi layer (30 nm), the intensity ratio of the two wavelengths could be adjusted for balanced white light emission. By using the device composed of glass/Ag (100 nm)/ITO (90 nm)/2-TNATA (60 nm)/NPB (15 nm)/DPVBi:DCJTB (1.2%, 30 nm)/Alq{sub 3} (20 nm)/Li (1.0 nm)/Al (2.0 nm)/Ag (20 nm)/ITO (63 nm)/SiO{sub 2} (42 nm), the Commission Internationale d'Eclairage (CIE) chromaticity coordinate of (0.32, 0.34) close to the ideal white color CIE coordinate could be obtained at 100 cd/m{sup 2}.

Comparison of Mesa and Device Diameter Variation in Double Wafer-Fused Multi Quantum-Well, Long-Wavelength, Vertical Cavity Surface Emitting Lasers

International Nuclear Information System (INIS)

Menon, P.S.; Kandiah, K.; Burhanuddin Yeop Majlis; Shaari, S.

2011-01-01

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics. (author)

Eye safety related to near infrared radiation exposure to biometric devices.

Science.gov (United States)

Kourkoumelis, Nikolaos; Tzaphlidou, Margaret

2011-03-01

Biometrics has become an emerging field of technology due to its intrinsic security features concerning the identification of individuals by means of measurable biological characteristics. Two of the most promising biometric modalities are iris and retina recognition, which primarily use nonionizing radiation in the infrared region. Illumination of the eye is achieved by infrared light emitting diodes (LEDs). Even if few LED sources are capable of causing direct eye damage as they emit incoherent light, there is a growing concern about the possible use of LED arrays that might pose a potential threat. Exposure to intense coherent infrared radiation has been proven to have significant effects on living tissues. The purpose of this study is to explore the biological effects arising from exposing the eye to near infrared radiation with reference to international legislation.

Correlation of electromagnetic radiation emitted from coal or rock to supporting resistance

Energy Technology Data Exchange (ETDEWEB)

Jia, Hui-lin; Wang, En-yuan; Song, Xiao-yan; Zhang, Hong-jie; Li, Zhong-hui [China University of Mining & Technology, Xuzhou (China). School of Safety Engineering

2009-05-15

More accurate forecasting of rock burst might be possible from observations of electromagnetic radiation emitted in the mine. We analyzed experimental observations and field data from the Muchengjian coal mine to study the relationship between electromagnetic radiation signal intensity and stress during the fracturing of coal, or rock, and samples under load. The results show that the signal intensity is positively correlated with stress. In addition, we investigated the change in the electromagnetic radiation intensity, the supporting resistance in a real coal mine environment, and the coal or rock stress in the mining area. The data analysis indicates that: (1) electromagnetic radiation intensity can accurately reflect the distribution of stress in the mining area; and, (2) there is a correlation between electromagnetic radiation intensity and supporting resistance. The research has some practical guiding significance for rock burst forecasting and for the prevention of accidents in coal mines. 9 refs., 6 figs.

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

Science.gov (United States)

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

Detection device of dangerous radiation for the living beings

International Nuclear Information System (INIS)

Lacoste, F.

1991-01-01

This invention is about a portable device able to measure dose rates or doses of gamma, ultraviolet and X radiation or charged particles. This device is composed of a radiation detector, a calculator of the accumulate dose and a memory to store the data. This device has a credit card format

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

Science.gov (United States)

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Radiation sensitive devices and systems for detection of radioactive materials and related methods

Science.gov (United States)

Kotter, Dale K

2014-12-02

Radiation sensitive devices include a substrate comprising a radiation sensitive material and a plurality of resonance elements coupled to the substrate. Each resonance element is configured to resonate responsive to non-ionizing incident radiation. Systems for detecting radiation from a special nuclear material include a radiation sensitive device and a sensor located remotely from the radiation sensitive device and configured to measure an output signal from the radiation sensitive device. In such systems, the radiation sensitive device includes a radiation sensitive material and a plurality of resonance elements positioned on the radiation sensitive material. Methods for detecting a presence of a special nuclear material include positioning a radiation sensitive device in a location where special nuclear materials are to be detected and remotely interrogating the radiation sensitive device with a sensor.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

Science.gov (United States)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Large arrays of discrete ionizing radiation detectors multiplexed using fluorescent optical converters

International Nuclear Information System (INIS)

Koslow, E.E.; Edelman, R.R.

1985-01-01

This invention provides a radiation imaging system employing arrays of scintillators. An object of the invention is to produce a detector with high spatial resolution, high gamma-photon absorption efficiency, excellent source and detector scatter rejection, and utilizing low-cost solid state opto-electronic devices. In one embodiment, it provides a radiation detection and conversion apparatus having an array of optically isolated radiation sensitive elements that emit optical radiation upon absorption of ionizing radiation. An array of channels, comprising a material that absorbs and traps the radiation emitted and transports it or radiation that has been shifted to longer wavelengths, is placed near the radiation-sensitive elements. Electro-optical detectors that convert the transported radiation into electrical signals are coupled to the channels. The activation of one of the electro-optical devices by radiation from one of the channels indicates that at least one of the radiation-sensitive elements near that channel has absorbed a quantity of radiation

78 FR 19711 - Center for Devices and Radiological Health: Experiential Learning Program

Science.gov (United States)

2013-04-02

... timely and continued access to safe, effective, high-quality medical devices and safe radiation-emitting...-acoustic stimulation using hybrid cochlear implants, preservation of residual hearing, postoperative...

Surface-Emitting Distributed Feedback Terahertz Quantum-Cascade Lasers in Metal-Metal Waveguides

Science.gov (United States)

Kumar, Sushil; Williams, Benjamin S.; Qin, Qi; Lee, Alan W. M.; Hu, Qing; Reno, John L.

2007-01-01

Single-mode surface-emitting distributed feedback terahertz quantumcascade lasers operating around 2.9 THz are developed in metal-metal waveguides. A combination of techniques including precise control of phase of reflection at the facets, and u e of metal on the sidewalls to eliminate higher-order lateral modes allow robust single-mode operation over a range of approximately 0.35 THz. Single-lobed far-field radiation pattern is obtained using a pi phase-shift in center of the second-order Bragg grating. A grating device operating at 2.93 THz lased up to 149 K in pulsed mode and a temperature tuning of 19 .7 GHz was observed from 5 K to 147 K. The same device lased up to 78 K in continuous-wave (cw) mode emitting more than 6 m W of cw power at 5 K. ln general, maximum temperature of pulsed operation for grating devices was within a few Kelvin of that of multi-mode Fabry-Perot ridge lasers

POWER, METALLURGICAL AND CHEMICAL MECHANICAL ENGINEERING THERMOELECTRIC EVENTS IN LIGHT-EMITTING BIPOLAR SEMICONDUCTOR STRUCTURES

Directory of Open Access Journals (Sweden)

P. A. Magomedova

2017-01-01

Full Text Available Objective. The development of light-emitting bipolar semiconductor structures having a low level of parasitic heat release.Methods. A method for converting thermoelectric heat in bipolar semiconductor structures into optical radiation to divert the excess energy into the environment was developed. At the same time, the cooling effect on thermoelectric junctions remains. Instead of an inertial process of conductive or convective heat transfer, practically instantaneous heat removal from electronic components to the environment takes place.Results. As a result, light-emitting bipolar semiconductor structures will allow more powerful devices with greater speed and degree of integration to be created. It is possible to produce transparent LED matrices with a two-way arrangement of transparent solar cells and mirror metal electrodes along the perimeter. When current is applied, the LED matrix on one of the transitions will absorb thermal energy; on other electrodes, it will emit radiation that is completely recovered into electricity by means of transparent solar cells following repeated reflection between the mirror electrodes. The low efficiency of solar cells will be completely compensated for with the multiple passages of photons through these batteries.Conclusion. Light-emitting bipolar semiconductor structures will not only improve the reliability of electronic components in a wide range of performance characteristics, but also improve energy efficiency through the use of optical radiation recovery. Semiconductor thermoelectric devices using optical phenomena in conjunction with the Peltier effect allow a wide range of energy-efficient components of radio electronic equipment to be realised, both for discrete electronics and for microsystem techniques. Systems for obtaining ultra-low temperatures in order to achieve superconductivity are of particular value. 

Continuum radiation emitted from transition metals under ion bombardment

International Nuclear Information System (INIS)

El Boujlaidi, A.; Kaddouri, A.; Ait El Fqih, M.; Hammoum, K.; Aouchiche, H.

2012-01-01

Optical emission of transition metals has been studied during 5 keV Kr + ions bombardment within and without oxygen atmosphere in the colliding chamber. The observed spectra consist of a series of discrete lines superimposed on a broad continuum. Generally, the emission intensity was influenced by the presence of oxygen giving rise to transient effects as well as to an increase in the line intensity. The behaviours of spectral lines were successfully explained in term of electron-transfer process between the excited sputtered atom and the solid surface. In this work, we have focused our study on the continuous radiation emitted during ion bombardment. The experimental results suggest that the continuum emission depends on the nature of metal and very probably related to its electronic structure. The collective deactivation of 3d-shell electrons appears to play a role in the emission of this radiation. The observed enhancement in the presence of oxygen is probably due to a significant contribution of the oxide molecules. (authors)

White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

International Nuclear Information System (INIS)

Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

2013-01-01

We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

Measuring ionizing radiation with a mobile device

Science.gov (United States)

Michelsburg, Matthias; Fehrenbach, Thomas; Puente León, Fernando

2012-02-01

In cases of nuclear disasters it is desirable to know one's personal exposure to radioactivity and the related health risk. Usually, Geiger-Mueller tubes are used to assess the situation. Equipping everyone with such a device in a short period of time is very expensive. We propose a method to detect ionizing radiation using the integrated camera of a mobile consumer device, e.g., a cell phone. In emergency cases, millions of existing mobile devices could then be used to monitor the exposure of its owners. In combination with internet access and GPS, measured data can be collected by a central server to get an overview of the situation. During a measurement, the CMOS sensor of a mobile device is shielded from surrounding light by an attachment in front of the lens or an internal shutter. The high-energy radiation produces free electrons on the sensor chip resulting in an image signal. By image analysis by means of the mobile device, signal components due to incident ionizing radiation are separated from the sensor noise. With radioactive sources present significant increases in detected pixels can be seen. Furthermore, the cell phone application can make a preliminary estimate on the collected dose of an individual and the associated health risks.

Efficient white organic light-emitting devices based on blue, orange, red phosphorescent dyes

International Nuclear Information System (INIS)

Chen Ping; Duan Yu; Xie Wenfa; Zhao Yi; Hou Jingying; Liu Shiyong; Zhang Liying; Li Bin

2009-01-01

We demonstrate efficient white organic light-emitting devices (WOLEDs) based on an orange phosphorescent iridium complex bis(2-(2-fluorphenyl)-1,3-benzothiozolato-N, C 2' )iridium(acetylacetonate) in combination with blue phosphorescent dye bis[(4, 6-difluorophenyl)-pyridinato-N,C 2 )](picolinato) Ir(III) and red phosphorescent dye bis[1-(phenyl)isoquinoline] iridium (III) acetylanetonate. By introducing a thin layer of 4, 7-diphenyl-1,10-phenanthroline between blue and red emission layers, the diffusion of excitons is confined and white light can be obtained. WOLEDs with the interlayer all have a higher colour rendering index (>82) than the device without it (76). One device has the maximum current efficiency of 17.6 cd A -1 and a maximum luminance of 39 050 cd m -2 . The power efficiency is 8.7 lm W -1 at 100 cd m -2 . Furthermore, the device has good colour stability and the CIE coordinates just change from (0.394, 0.425) to (0.390, 0.426) with the luminance increasing from 630 to 4200 cd m -2 .

Devices for obtaining information about radiation sources

International Nuclear Information System (INIS)

Tosswill, C.H.

1981-01-01

The invention provides a sensitive, fast high-resolution device for obtaining information about the distribution of gamma and X-radiation sources and provides a radiation detector useful in such a device. It comprises a slit collimator with a multiplicity of slits each with slit-defining walls of material and thickness to absorb beam components impinging on them. The slits extend further in one direction than the other. The detector for separately detecting beam components passing through the slits also provides data output signals. It comprises a plurality of radiation transducing portions which are not photoconductor elements each at the end of a slit. A positioner operates to change the transverse position of the slits and radiation transducing portions relative to the source, wherein each radiation transducing element is positioned within its respective slit between the slit defining walls. Full details and preferred embodiments are given. (U.K.)

Effects of radiation emitted from visual display terminals on the oral health status

International Nuclear Information System (INIS)

Kazem, H.H.

2008-01-01

This study was designed to investigate the effects of exposure to radiation emitted from visual display terminals (VDTs) on the oral health status; a cross sectional study was carried out on 100 participants both males and females with age ranging between 22- 40 years working in various places in Cairo. They were divided into two groups; the first consists of 50 subjects working in front of VDTs eight hours min. daily, min. 5 days/ week, 2 years or more, and the other group 50 subjects working away from any VDTs. Both groups were subjected to both oral and dental examinations, including soft tissues assessment by using gingival index (GI) and hard tissues assessment by using decayed, missed, filled (DMF) index. Saliva analysis was done including ph analysis by ph meter cyberscan 500 and trace elements analysis by ion chromatography and salivary immunoglobulin A (sIgA) analysis by ELISA, body temperature by using digital thermometer. The values were compared between both groups and also between before and after exposure in the exposed group. The results demonstrated that the difference in the mean values of either GI or DMF or ph or anions and cations or sIgA levels between exposed and non exposed groups or even between before and after exposure in the exposed group was found to be statistically insignificant. On the other hand there were significant changes in the mean values of body temperature between exposed and non-exposed group and also between before and after exposure in the exposed group. Accordingly, within the limits of this study we can conclude that radiation emitted from VDTs affects body temperature, but do not have any effect on oral health including; hard or soft tissues or salivary components. This might be explained by the radiation with very low energy emitted from VDTs

Effects of radiation emitted from visual display terminals on the oral health status

Energy Technology Data Exchange (ETDEWEB)

Kazem, H H [National Center for Radiation Research and Technology, Atomic Energy Authority, Cairo (Egypt)

2008-07-01

This study was designed to investigate the effects of exposure to radiation emitted from visual display terminals (VDTs) on the oral health status; a cross sectional study was carried out on 100 participants both males and females with age ranging between 22- 40 years working in various places in Cairo. They were divided into two groups; the first consists of 50 subjects working in front of VDTs eight hours min. daily, min. 5 days/ week, 2 years or more, and the other group 50 subjects working away from any VDTs. Both groups were subjected to both oral and dental examinations, including soft tissues assessment by using gingival index (GI) and hard tissues assessment by using decayed, missed, filled (DMF) index. Saliva analysis was done including ph analysis by ph meter cyberscan 500 and trace elements analysis by ion chromatography and salivary immunoglobulin A (sIgA) analysis by ELISA, body temperature by using digital thermometer. The values were compared between both groups and also between before and after exposure in the exposed group. The results demonstrated that the difference in the mean values of either GI or DMF or ph or anions and cations or sIgA levels between exposed and non exposed groups or even between before and after exposure in the exposed group was found to be statistically insignificant. On the other hand there were significant changes in the mean values of body temperature between exposed and non-exposed group and also between before and after exposure in the exposed group. Accordingly, within the limits of this study we can conclude that radiation emitted from VDTs affects body temperature, but do not have any effect on oral health including; hard or soft tissues or salivary components. This might be explained by the radiation with very low energy emitted from VDTs.

Devices for obtaining information about radiation sources

International Nuclear Information System (INIS)

Tosswill, C.H.

1981-01-01

The invention provides a sensitive, fast, high-resolution device for obtaining information about the distribution of gamma and X-radiation sources and provides a radiation detector useful in such a device. It comprises a slit collimator with a multiplicity of slits each with slit-defining walls of material and thickness to absorb beam components impinging on them. The slits extend further in one transverse direction than the other. The detector for separately detecting beam components passing through the slits also provides data output signals. It comprises a plurality of radiation transducing portions, each at the end of a slit. A positioner changes the transverse position of the slits and radiation transducer (a photoconductor) relative to the source. Applications are in nuclear medicine and industry. Full details and preferred embodiments are given. (U.K.)

Serum and plasma for total and free anticonvulsant drug analyses: effects on EMIT assays and ultrafiltration devices.

Science.gov (United States)

Godolphin, W; Trepanier, J; Farrell, K

1983-01-01

The suitability of serum and plasma anticoagulated with heparin, EDTA, citrate, or oxalate was assessed for analysis of free and total phenytoin, carbamazepine, and valproic acid. The free fraction was isolated by ultrafiltration through FreeLevel devices (Syva, Palo Alto, CA). Serum, heparin, and EDTA plasma were satisfactory for both free and total phenytoin and carbamazepine. EDTA could not be used for EMIT (Syva) analysis of valproate. Citrate and, to a lesser degree, oxalate cause a significant negative interference in the concentration of these three drugs as measured both by EMIT and gas-liquid chromatography.

Radiation sensitive area detection device and method

Science.gov (United States)

Carter, Daniel C. (Inventor); Hecht, Diana L. (Inventor); Witherow, William K. (Inventor)

1991-01-01

A radiation sensitive area detection device for use in conjunction with an X ray, ultraviolet or other radiation source is provided which comprises a phosphor containing film which releases a stored diffraction pattern image in response to incoming light or other electromagnetic wave. A light source such as a helium-neon laser, an optical fiber capable of directing light from the laser source onto the phosphor film and also capable of channelling the fluoresced light from the phosphor film to an integrating sphere which directs the light to a signal processing means including a light receiving means such as a photomultiplier tube. The signal processing means allows translation of the fluoresced light in order to detect the original pattern caused by the diffraction of the radiation by the original sample. The optical fiber is retained directly in front of the phosphor screen by a thin metal holder which moves up and down across the phosphor screen and which features a replaceable pinhole which allows easy adjustment of the resolution of the light projected onto the phosphor film. The device produces near real time images with high spatial resolution and without the distortion that accompanies prior art devices employing photomultiplier tubes. A method is also provided for carrying out radiation area detection using the device of the invention.

Ring cavity surface emitting semiconductor lasers

International Nuclear Information System (INIS)

Mujagic, E.

2010-01-01

Quantum cascade lasers (QCLs) are electrically driven semiconductor lasers, which have undergone a steady improvement since the first demonstration in 1994. These are now well established as reliable sources of coherent light in the mid-infrared (MIR) and terahertz (THz)range of the electromagnetic spectrum (3-300 μm). The rapid progress of this type of lasers is based on a high degree of freedom in tailoring the emission wavelength within a large variety of semiconductor heterostructure designs and materials. These properties have attracted the attention of various applications such as gas analysis, chemical sensing, spectral imaging and free-space telecommunication. In order to improve the selectivity, sensitivity and efficiency of today's sensor systems, high optical power, continuous wave and room temperature performance, single-mode operation and low divergence optical beams, are highly desirable qualities of a compact laser source in this field of research. Since all of these features cannot be provided by a conventional edge-emitting device at the same time, research has put focus on the development of surface emitting devices. Nowadays, the vertical cavity surface emitting lasers (VCSELs) are the most prominent representative for this type of light emitters. With its capability of producing narrow circular beams, the feasibility of two-dimensional arrays and on-wafer testing, such a coherent light source results in a reduction of the fabrication effort and production costs. Since the radiation in QCLs is strictly polarized normal to the epitaxial layer plane, fabrication of VCSELs based on QC structures is not viable. The subject of this work is the design and realization of 'ring cavity surface emitting lasers' (ring-CSELs). This type of lasers employs a circular ring cavity and a resonant distributed feedback (DFB) surface grating. Ring-CSELs were fabricated on the basis of MIR and THz QC structures, which cover a wavelength range from 4 μm to 93 �

Radiation resistance of InP-related materials

International Nuclear Information System (INIS)

Yamaguchi, Masafumi; Takamoto, Tatsuya; Ikeda, Eiji; Kurita, Hiroshi; Ohmori, Masamichi; Ando, Koshi; Vargas-Aburto, C.

1995-01-01

Irradiation effects of 1-MeV electrons on InP-related materials such as InP, InGaP and InGaAsP have been examined in comparison with those of GaAs. Superior radiation-resistance of InP-related materials and their devices compared to GaAs has been found in terms of minority-carrier diffusion length and properties of devices such as solar cells and light-emitting devices. Moreover, minority-carrier injection-enhanced annealing of radiation-induced defects in InP-related materials has also been observed. (author)

Toxicologic study of electromagnetic radiation emitted by television and video display screens and cellular telephones on chickens and mice

International Nuclear Information System (INIS)

Bastide, M.; Youbicier-Simo, B.J.; Lebecq, J.C.; Giaimis, J.; Youbicier-Simo, B.J.

2001-01-01

The effects of continuous exposure of chick embryos and young chickens to the electromagnetic fields (EMFs) emitted by video display units (VDUs) and GSM cell phone radiation, either the whole spectrum emitted or attenuated by a copper gauze, were investigated. Permanent exposure to the EMFs radiated by a VDU was associated with significantly increased fetal loss (47-68%) and markedly depressed levels of circulating specific antibodies (lgG), corticosterone and melatonin. We have also shown that under chronic exposure conditions, GSM cell phone radiation was harmful to chick embryos, stressful for healthy mice and, in this species, synergistic with cancer insofar as it depleted stress hormones. The same pathological results were observed after substantial reduction of the microwaves radiated from the cell phone by attenuating them with a copper gauze. (author)

Photon management of GaN-based optoelectronic devices via nanoscaled phenomena

KAUST Repository

Tsai, Yu-Lin

2016-09-06

Photon management is essential in improving the performances of optoelectronic devices including light emitting diodes, solar cells and photo detectors. Beyond the advances in material growth and device structure design, photon management via nanoscaled phenomena have also been demonstrated as a promising way for further modifying/improving the device performance. The accomplishments achieved by photon management via nanoscaled phenomena include strain-induced polarization field management, crystal quality improvement, light extraction/harvesting enhancement, radiation pattern control, and spectrum management. In this review, we summarize recent development, challenges and underlying physics of photon management in GaN-based light emitting diodes and solar cells. (C) 2016 Elsevier Ltd. All rights reserved.

Efficient, air-stable quantum dots light-emitting devices with MoO3 modifying the anode

International Nuclear Information System (INIS)

Meng, Xiangdong; Ji, Wenyu; Hua, Jie; Yu, Zhaoliang; Zhang, Yan; Li, Haibo; Zhao, Jialong

2013-01-01

In this work, we fabricated quantum dots light-emitting devices with hole-injection layer, molybdenum oxide (MoO 3 ) substituting for poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) which is hygroscopic and acidic and, therefore, a source of interface instability. A significant enhancement in luminance and current efficiency in MoO 3 -containing devices was observed. In addition, MoO 3 -containing devices were more stable in the air than those with PEDOT:PSS as the hole injection layer. The hole injection and transport of the devices were studied by the J–V characteristics of the hole-only devices. The excellent performance of the devices was principally a result of MoO 3 possessing lower injection barrier for the hole and better stability than PEDOT:PSS. -- Highlights: • We fabricated QD-LEDs with MoO 3 substituting for PEDOT:PSS as hole-injection layer. • A enhancement in luminance and efficiency in MoO 3 -containing device was observed. • The enhancement was originated from the stability and easy hole injection of MoO 3

Method and device for controlling radiation

International Nuclear Information System (INIS)

Wilhelm, G.M.

1979-01-01

A device which will control radiation emanating from colour television sets is described. It consists of two transparent plates the same size as a television screen, with a thin layer of transparent mineral oil sealed between them. The device may be installed by the manufacturer or bought separately and installed by the user. (LL)

Radiation dose rate measuring device

International Nuclear Information System (INIS)

Sorber, R.

1987-01-01

A portable device is described for in-field usage for measuring the dose rate of an ambient beta radiation field, comprising: a housing, substantially impervious to beta radiation, defining an ionization chamber and having an opening into the ionization chamber; beta radiation pervious electrically-conductive window means covering the opening and entrapping, within the ionization chamber, a quantity of gaseous molecules adapted to ionize upon impact with beta radiation particles; electrode means disposed within the ionization chamber and having a generally shallow concave surface terminating in a generally annular rim disposed at a substantially close spacing to the window means. It is configured to substantially conform to the window means to define a known beta radiation sensitive volume generally between the window means and the concave surface of the electrode means. The concave surface is effective to substantially fully expose the beta radiation sensitive volume to the radiation field over substantially the full ambient area faced by the window means

Red organic light emitting devices with reduced efficiency roll-off behavior by using hybrid fluorescent/phosphorescent emission structure

Energy Technology Data Exchange (ETDEWEB)

Zheng Tianhang; Choy, Wallace C.H., E-mail: chchoy@eee.hku.h

2010-11-01

Organic light emitting device (OLED) with a fluorescence-interlayer-phosphorescence emissive structure (FIP EML) is proposed to solve efficiency roll-off issue effectively. By doping fluorescent emitter of 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) and phosphorescent emitter of tris(1-phenylisoquinolinolato-C2,N)iridium(III) (Ir(piq){sub 3}) into the different regions of emission zone to form FIP EML in red OLED, an improvement of more than 20% in luminance efficiency roll-off compared with that of typical phosphorescent OLED with single EML in 10-500 mA/cm{sup 2} range has been obtained. Detailed mechanisms have been studied. Such improvement should be attributed to the distinct roles of the two emitters, where DCJTB mainly used to influence the carrier transport leading to an improved balance of charge carriers while Ir(piq){sub 3} functions as the radiative decay sites for most generated excitons. Meanwhile, with the help of the formation of FIP EML, the redistribution of excitons in recombination zone, the suppression of non-radiative exciton quenching processes and the elimination of energy transfer loss also contribute to the enhancement of efficiency roll-off. The method proposed here may provide a route to develop efficient OLED for high luminance applications.

Terrestrial radiation effects in ULSI devices and electronic systems

CERN Document Server

Ibe, Eishi H

2014-01-01

A practical guide on how mathematical approaches can be used to analyze and control radiation effects in semiconductor devices within various environments Covers faults in ULSI devices to failures in electronic systems caused by a wide variety of radiation fields, including electrons, alpha -rays, muons, gamma rays, neutrons and heavy ions. Readers will learn the environmental radiation features at the ground or avionics altitude. Readers will also learn how to make numerical models from physical insight and what kind of mathematical approaches should be implemented to analyze the radiation effects. A wide variety of mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them. The book provides the reader with the knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. It explains how electronic systems including servers and rout...

Electromagnetic Radiofrequency Radiation Emitted from GSM Mobile Phones Decreases the Accuracy of Home Blood Glucose Monitors

Science.gov (United States)

Mortazavi, SMJ; Gholampour, M; Haghani, M; Mortazavi, G; Mortazavi, AR

2014-01-01

Mobile phones are two-way radios that emit electromagnetic radiation in microwave range. As the number of mobile phone users has reached 6 billion, the bioeffects of exposure to mobile phone radiation and mobile phone electromagnetic interference with electronic equipment have received more attention, globally. As self-monitoring of blood glucose can be a beneficial part of diabetes control, home blood glucose testing kits are very popular. The main goal of this study was to investigate if radiofrequency radiation emitted from a common GSM mobile phone can alter the accuracy of home blood glucose monitors. Forty five female nondiabetic students aged 17-20 years old participated in this study. For Control-EMF group (30 students), blood glucose concentration for each individual was measured in presence and absence of radiofrequency radiation emitted by a common GSM mobile phone (HTC touch, Diamond 2) while the phone was ringing. For Control- Repeat group (15 students), two repeated measurements were performed for each participant in the absence of electromagnetic fields. The magnitude of the changes between glucose levels in two repeated measurements (|ΔC|) in Control-Repeat group was 1.07 ± 0.88 mg/dl while this magnitude for Control-EMF group was 7.53 ± 4.76 mg/dl (P electromagnetic interference in home blood glucose monitors. It can be concluded that electromagnetic interference from mobile phones has an adverse effect on the accuracy of home blood glucose monitors. We suggest that mobile phones should be used at least 50 cm away from home blood glucose monitors. PMID:25505778

X-ray Emitting GHz-Peaked Spectrum Galaxies: Testing a Dynamical-Radiative Model with Broad-Band Spectra

International Nuclear Information System (INIS)

Ostorero, L.; Moderski, R.; Stawarz, L.; Diaferio, A.; Kowalska, I.; Cheung, C.C.; Kataoka, J.; Begelman, M.C.; Wagner, S.J.

2010-01-01

In a dynamical-radiative model we recently developed to describe the physics of compact, GHz-Peaked-Spectrum (GPS) sources, the relativistic jets propagate across the inner, kpc-sized region of the host galaxy, while the electron population of the expanding lobes evolves and emits synchrotron and inverse-Compton (IC) radiation. Interstellar-medium gas clouds engulfed by the expanding lobes, and photoionized by the active nucleus, are responsible for the radio spectral turnover through free-free absorption (FFA) of the synchrotron photons. The model provides a description of the evolution of the GPS spectral energy distribution (SED) with the source expansion, predicting significant and complex high-energy emission, from the X-ray to the γ-ray frequency domain. Here, we test this model with the broad-band SEDs of a sample of eleven X-ray emitting GPS galaxies with Compact-Symmetric-Object (CSO) morphology, and show that: (i) the shape of the radio continuum at frequencies lower than the spectral turnover is indeed well accounted for by the FFA mechanism; (ii) the observed X-ray spectra can be interpreted as non-thermal radiation produced via IC scattering of the local radiation fields off the lobe particles, providing a viable alternative to the thermal, accretion-disk dominated scenario. We also show that the relation between the hydrogen column densities derived from the X-ray (N H ) and radio (N HI ) data of the sources is suggestive of a positive correlation, which, if confirmed by future observations, would provide further support to our scenario of high-energy emitting lobes.

Radiation detection device

International Nuclear Information System (INIS)

Peschmann, Kristian.

1982-01-01

A radiation detector suitable for use in computer tomography device has an ionization chamber which comprises a high voltage electrode, a collector electrode, a high voltage source having two terminals, one connected to the high voltage electrode, current measuring means having two terminals, one connected to the high voltage source and the other to the collector electrode, and an auxilliary electrode near and parallel to the entrance window of the device, having one adjacent to the high voltage electrode and the other adjacent but not connected to the collector electrode. The auxilliary electrode is connected to the high voltage source. In this way the electric field between the high voltage and collector electrodes is made homogeneous in the vicinity of the auxilliary electrode, improving the measuring speed of the detector

Measurement of Underwater Operational Noise Emitted by Wave and Tidal Stream Energy Devices.

Science.gov (United States)

Lepper, Paul A; Robinson, Stephen P

2016-01-01

The increasing international growth in the development of marine and freshwater wave and tidal energy harvesting systems has been followed by a growing requirement to understand any associated underwater impact. Radiated noise generated during operation is dependent on the device's physical properties, the sound-propagation environment, and the device's operational state. Physical properties may include size, distribution in the water column, and mechanics/hydrodynamics. The sound-propagation environment may be influenced by water depth, bathymetry, sediment type, and water column acoustic properties, and operational state may be influenced by tidal cycle and wave height among others This paper discusses some of the challenges for measurement of noise characteristics from these devices as well as a case study of the measurement of radiated noise from a full-scale wave energy converter.

CASPER: Concordia Atmospheric SPectroscopy of Emitted Radiation

Science.gov (United States)

de Petris, M.; Catalano, A.; de Gregori, S.; Lamagna, L.; Lattanzi, V.; Luzzi, G.; Maoli, R.; Melchiorri, A.; Melchiorri, F.; Savini, G.; Vetrani, G. G.; Battistelli, E. S.; Valenziano, L.; Mandolesi, N.; Villa, F.; Cuttaia, F.; Ade, P. A. R.; Mauskopf, P.; Orlando, A.; Encrenaz, P.; Pardo, J. R.; Cernicharo, J.

CASPER (Concordia Atmospheric SPectroscopy of Emitted Radiation) is a spectrometer proposed for installation at Dome C, devoted to measurements of atmospheric emission in the spectral region between 180 μm and 3 mm (3 55 cm-1). This instrument will be able to perform continuous spectral sampling at different altitudes at angular scales of 1°. From the recorded data it is possible to extract atmospheric transmittance within 1% in the whole wide operating band, together with water vapour content and O{2} and O{3} concentrations. CASPER will allow us to characterize the site for future FIR/mm telescopes. Atmospheric data recorded by CASPER will allow for correction of astrophysical and cosmological observations without the need for telescope-specific procedures and further loss of observation time with more precision in the observations themselves. Calibration of ground-based telescopes on known sky sources is strongly affected by atmospheric absorption. CASPER has this as its primary goal. The spectrometer is based on a Martin-Puplett interferometer. Two data sampling solutions will be performed: phase modulation & fast scan strategy. Sky radiation is collected towards the interferometer by an optical setup that allows the field of view, to explore the full 0° div 90° range of elevation angles. With a low spurious polarization instrument, monitoring of polarized atmospheric contribution will be possible.

The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

International Nuclear Information System (INIS)

Kwang-Ohk Cheon

2003-01-01

Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance

The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

Energy Technology Data Exchange (ETDEWEB)

Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)

2003-01-01

Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

Soil moisture estimation using reflected solar and emitted thermal infrared radiation

Science.gov (United States)

Jackson, R. D.; Cihlar, J.; Estes, J. E.; Heilman, J. L.; Kahle, A.; Kanemasu, E. T.; Millard, J.; Price, J. C.; Wiegand, C. L.

1978-01-01

Classical methods of measuring soil moisture such as gravimetric sampling and the use of neutron moisture probes are useful for cases where a point measurement is sufficient to approximate the water content of a small surrounding area. However, there is an increasing need for rapid and repetitive estimations of soil moisture over large areas. Remote sensing techniques potentially have the capability of meeting this need. The use of reflected-solar and emitted thermal-infrared radiation, measured remotely, to estimate soil moisture is examined.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

2012-01-01

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

Science.gov (United States)

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

KAUST Repository

Sun, Liangfeng

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

The insertion device magnetic measurement facility: Prototype and operational procedures

International Nuclear Information System (INIS)

Burkel, L.; Dejus, R.; Maines, J.; O'Brien, J.; Vasserman, I.; Pfleuger, J.

1993-03-01

This report is a description of the current status of the magnetic measurement facility and is a basic instructional manual for the operation of the facility and its components. Please refer to the appendices for more detailed information about specific components and procedures. The purpose of the magnetic measurement facility is to take accurate measurements of the magnetic field in the gay of the IDs in order to determine the effect of the ID on the stored particle beam and the emitted radiation. The facility will also play an important role when evaluating new ideas, novel devices, and inhouse prototypes as part of the ongoing research and development program at the APS. The measurements will be performed with both moving search coils and moving Hall probes. The IDs will be evaluated by computer modeling of the emitted radiation for any given (measured) magnetic field map. The quality of the magnetic field will be described in terms of integrated multipoles for the effect on Storage Ring performance and in terms of the derived trajectories for the emitted radiation. Before being installed on the Storage Ring, every device will be measured and characterized to assure that it is compatible with Storage Ring requirements and radiation specifications. The accuracy that the APS needs to achieve for magnetic measurements will be based on these specifications

Efficient single light-emitting layer pure blue phosphorescent organic light-emitting devices with wide gap host and matched interlayer

Energy Technology Data Exchange (ETDEWEB)

Jiang, Yunlong; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

2015-12-15

In this work, we report the highly efficient pure blue electroluminescent (EL) device based on bis[(3,5-difluoro-4-cyanophenyl)pyridine]picolinate iridium(III) (FCNIrpic) doped 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi) film. The matched energy levels of FCNIrpic and CzSi are helpful in facilitating the trapping of carriers, while the high triplet energy of CzSi can well avoid the undesired reverse energy transfer. More importantly, the injection of holes was further accelerated by inserting 5 nm 4,4′,4″-Tri(9-carbazoyl)triphenylamine (TcTa) film between hole transport layer and lighting-emitting layer (EML) as interlayer. Consequently, EL performances were significantly enhanced attributed to wider recombination zone and better balance of holes and electrons. Interestingly, single-EML device displayed higher performances than those of double-EMLs device. Finally, pure blue EL device with the structure of ITO/MoO{sub 3} (3 nm)/TAPC (40 nm)/TcTa (5 nm)/FCNIrpic (20%): CzSi (30 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) realized the maximum brightness, current efficiency, power efficiency and external quantum efficiency up to 12,505 cd/m{sup 2}, 36.20 cd/A, 28.42 lm/W and 16.9%, respectively. Even at the high brightness of 1000 cd/m{sup 2}, current efficiency and external quantum efficiency up to 17.40 cd/A and 8.1%, respectively, can be retained by the same device.

Radiation sensitive solid state devices

International Nuclear Information System (INIS)

Shannon, J.M.; Ralph, J.E.

1975-01-01

A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections. (auth)

Sample Environment in Experiments using X-Ray Synchrotron Radiation

DEFF Research Database (Denmark)

Buras, B

1984-01-01

beam experiments with wavelength chosen at will from the continuous spectrum. Another type of insertion device, called undulator produces quasi-monochromatic radiation. The insertion devices enable the tailoring of the emitted S.R. to the requirements of the users and can be treated as the first......Modern electron (positron) storage rings are able to emit very intense X-ray radiation with a continuous spectrum extending to 0.1 A, from bending magnets and insertion devices (wavelength shifters and multipole wigglers). It can be used directly for white beam experiments and/or for monochromatic...... optical element of the beam line. This feature is especially important for experiments with samples in special environment because the latter imposes limitations both on scattering and absorption experiments. However, these limitations can be minimized in each case by finding the best match between...

Nearly 100% triplet harvesting in conventional fluorescent dopant-based organic light-emitting devices through energy transfer from exciplex.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Chen, Miao; Liu, Wei; Zhang, Xiao-Hong; Lee, Chun-Sing

2015-03-25

Nearly 100% triplet harvesting in conventional fluorophor-based organic light-emitting devices is realized through energy transfer from exciplex. The best C545T-doped device using the exciplex host exhibits a maximum current efficiency of 44.0 cd A(-1) , a maximum power efficiency of 46.1 lm W(-1) , and a maximum external quantum efficiency of 14.5%. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improvement in Device Performance and Reliability of Organic Light-Emitting Diodes through Deposition Rate Control

Directory of Open Access Journals (Sweden)

Shun-Wei Liu

2014-01-01

Full Text Available We demonstrated a fabrication technique to reduce the driving voltage, increase the current efficiency, and extend the operating lifetime of an organic light-emitting diode (OLED by simply controlling the deposition rate of bis(10-hydroxybenzo[h]qinolinato beryllium (Bebq2 used as the emitting layer and the electron-transport layer. In our optimized device, 55 nm of Bebq2 was first deposited at a faster deposition rate of 1.3 nm/s, followed by the deposition of a thin Bebq2 (5 nm layer at a slower rate of 0.03 nm/s. The Bebq2 layer with the faster deposition rate exhibited higher photoluminescence efficiency and was suitable for use in light emission. The thin Bebq2 layer with the slower deposition rate was used to modify the interface between the Bebq2 and cathode and hence improve the injection efficiency and lower the driving voltage. The operating lifetime of such a two-step deposition OLED was 1.92 and 4.6 times longer than that of devices with a single deposition rate, that is, 1.3 and 0.03 nm/s cases, respectively.

International Standards for Radiation Sterilization of Medical Devices

International Nuclear Information System (INIS)

Miller, A.

2007-01-01

For a terminally sterilized medical device to be designated '' STERILE '', probability of finding the viable micro-organisms in the device shall be equal to or less than 1 x 10 -6 (EN 556-1:2001: Sterilization of medical devices - Requirements for medical devices to be designated '' STERILE '' - Part 1: Requirements for terminally sterilized medical devices). Author presents the main legal aspects of the international standards for radiation sterilization of medical devices

Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

Science.gov (United States)

Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

2012-08-01

Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

Kinetic Monte Carlo modeling of the efficiency roll-off in a multilayer white organic light-emitting device

NARCIS (Netherlands)

Mesta, M.; van Eersel, H.; Coehoorn, R.; Bobbert, P.A.

2016-01-01

Triplet-triplet annihilation (TTA) and triplet-polaron quenching (TPQ) in organic light-emitting devices (OLEDs) lead to a roll-off of the internal quantum efficiency (IQE) with increasing current density J. We employ a kinetic Monte Carlo modeling study to analyze the measured IQE and color balance

Space and military radiation effects in silicon-on-insulator devices

International Nuclear Information System (INIS)

Schwank, J.R.

1996-09-01

Advantages in transient ionizing and single-event upset (SEU) radiation hardness of silicon-on-insulator (SOI) technology spurred much of its early development. Both of these advantages are a direct result of the reduced charge collection volume inherent to SOI technology. The fact that SOI transistor structures do not include parasitic n-p-n-p paths makes them immune to latchup. Even though considerable improvement in transient and single-event radiation hardness can be obtained by using SOI technology, there are some attributes of SOI devices and circuits that tend to limit their overall hardness. These attributes include the bipolar effect that can ultimately reduce the hardness of SOI ICs to SEU and transient ionizing radiation, and charge buildup in buried and sidewall oxides that can degrade the total-dose hardness of SOI devices. Nevertheless, high-performance SOI circuits can be fabricated that are hardened to both space and nuclear radiation environments, and radiation-hardened systems remain an active market for SOI devices. The effects of radiation on SOI MOS devices are reviewed

STUDY OF DEGRADATION MECHANISM AND PACKAGING OF ORGANIC LIGHT EMITTING DEVICES

Institute of Scientific and Technical Information of China (English)

Gu Xu

2003-01-01

Organic Light Emitting Devices (OLED) have attracted much attention recently, for their applications in future Flat Panel Displays and lighting products. However, their fast degradation remained a major obstacle to their commercialization. Here we present a brief summary of our studies on both extrinsic and intrinsic causes for the fast degradation of OLEDs. In particular, we focus on the origin of the dark spots by "rebuilding" cathodes, which confirms that the growth of dark spots occurs primarily due to cathode delamination. In the meantime, we recapture the findings from the search for suitable OLED packaging materials, in particular polymer composites, which provide both heat dissipation and moisture resistance, in addition to electrical insulation.

Novel hybrid light-emitting devices based on MAPbBr3 nanoplatelets:PVK nanocomposites and zinc oxide nanorod arrays

Science.gov (United States)

Wang, Szu-Ping; Chang, Chun-Kai; Yang, Sheng-Hsiung; Chang, Che-Yu; Chao, Yu-Chiang

2018-01-01

In this research, we demonstrate inverted perovskite light-emitting devices (PeLEDs) based on zinc oxide nanorod arrays (ZnO NAs) as the electron transport layer and methylammonium lead bromide nanoplatelets (MAPbBr3 NPLs) as the emissive material for the first time. The polyethyleneimine ethoxylated (PEIE) was inserted between the ZnO NAs and the MAPbBr3 NPLs layer to reduce the energy barrier and improve the electron injection efficiency. Besides, different weight ratios of poly(N-vinylcarbazole) (PVK) were blended with MAPbBr3 NPLs to make evenly dispersed nanocomposite films, thereby enhancing the performance of devices. Meanwhile, the photoluminescence of MAPbBr3 NPLs:PVK nanocomposite film was increased due to reduced self-quenching and prolonged carrier lifetime. Inverted PeLEDs with the configuration of ITO/PEIE-modified ZnO NAs/MAPbBr3 NPLs:PVK/TFB/Au were fabricated and evaluated, using TFB as the hole transport layer. The current density of the devices containing PVK matrix was significantly suppressed compared to those without PVK. Herein, the best device revealed a max brightness of 495 cd m-2 and a low turn-on voltage of 3.1 V that shows potential use in light-emitting applications.

Electromagnetic Radiofrequency Radiation Emitted from GSM Mobile Phones Decreases the Accuracy of Home Blood Glucose Monitors

Directory of Open Access Journals (Sweden)

SMJ Mortazavi

2014-09-01

Full Text Available Mobile phones are two-way radios that emit electromagnetic radiation in microwave range. As the number of mobile phone users has reached 6 billion, the bioeffects of exposure to mobile phone radiation and mobile phone electromagnetic interference with electronic equipment have received more attention, globally. As self-monitoring of blood glucose can be a beneficial part of diabetes control, home blood glucose testing kits are very popular. The main goal of this study was to investigate if radiofrequency radiation emitted from a common GSM mobile phone can alter the accuracy of home blood glucose monitors. Forty five female nondiabetic students aged 17-20 years old participated in this study. For Control-EMF group (30 students, blood glucose concentration for each individual was measured in presence and absence of radiofrequency radiation emitted by a common GSM mobile phone (HTC touch, Diamond 2 while the phone was ringing. For Control- Repeat group (15 students, two repeated measurements were performed for each participant in the absence of electromagnetic fields. The magnitude of the changes between glucose levels in two repeated measurements (ΔC in Control-Repeat group was 1.07 ± 0.88 mg/dl while this magnitude for Control-EMF group was 7.53 ± 4.76 mg/dl (P < 0.001, two-tailed test. To the best of our knowledge, this is the first study to assess the electromagnetic interference in home blood glucose monitors. It can be concluded that electromagnetic interference from mobile phones has an adverse effect on the accuracy of home blood glucose monitors. We suggest that mobile phones should be used at least 50 cm away from home blood glucose monitors.

Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

Science.gov (United States)

Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

2015-04-22

Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

Science.gov (United States)

Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

2018-04-01

High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

Enhancement of organic light-emitting device performances with Hf-doped indium tin oxide anodes

International Nuclear Information System (INIS)

Chen, T.-H.; Liou, Y.; Wu, T.J.; Chen, J.Y.

2004-01-01

We have enhanced the luminance and the power efficiency of organic light-emitting devices with Hf-doped indium tin oxide (ITO) anodes instead of a CuPc layer. The Hf-doped ITO layer with a thickness of 15 nm was deposited on top of the ITO anode. Less than 10 mol. % of Hf was doped in ITO films by adjusting the sputtering rates of both sources. The highest work function of the Hf-doped ITO layers was 5.4 eV at the Hf concentrations about 10 mol. %. The driving voltages of the device have been reduced by 1 V. A luminance of 1000 cd/m 2 at 7 mA/cm 2 , a current efficiency of 14 cd/A, and a power efficiency of 6 lm/W at 6 mA/cm 2 have been achieved in the device with a 4 mol. % Hf-doped ITO layer (work function=5.2 eV). In general, the performance was about 50% better than the device with a CuPc buffer layer

Efficient non-doped phosphorescent orange, blue and white organic light-emitting devices

Science.gov (United States)

Yin, Yongming; Yu, Jing; Cao, Hongtao; Zhang, Letian; Sun, Haizhu; Xie, Wenfa

2014-10-01

Efficient phosphorescent orange, blue and white organic light-emitting devices (OLEDs) with non-doped emissive layers were successfully fabricated. Conventional blue phosphorescent emitters bis [4,6-di-fluorophenyl]-pyridinato-N,C2'] picolinate (Firpic) and Bis(2,4-difluorophenylpyridinato) (Fir6) were adopted to fabricate non-doped blue OLEDs, which exhibited maximum current efficiency of 7.6 and 4.6 cd/A for Firpic and Fir6 based devices, respectively. Non-doped orange OLED was fabricated utilizing the newly reported phosphorescent material iridium (III) (pbi)2Ir(biq), of which manifested maximum current and power efficiency of 8.2 cd/A and 7.8 lm/W. The non-doped white OLEDs were achieved by simply combining Firpic or Fir6 with a 2-nm (pbi)2Ir(biq). The maximum current and power efficiency of the Firpic and (pbi)2Ir(biq) based white OLED were 14.8 cd/A and 17.9 lm/W.

FDA Proposes New Safety Measures for Indoor Tanning Devices: The Facts

Science.gov (United States)

... Related Consumer Updates Indoor Tanning: The Risks of Ultraviolet Rays 5 Tips for a Healthy Vacation More in Consumer Updates Animal & Veterinary Children's Health Cosmetics Dietary Supplements Drugs Food Medical Devices Nutrition Radiation-Emitting Products Tobacco Products ...

Radiation detector device for measuring ionizing radiation

International Nuclear Information System (INIS)

Brake, D. von der.

1983-01-01

The device contains a compensating filter circuit, which guarantees measurement of the radiation dose independent of the energy or independent of the energy and direction. The compensating filter circuit contains a carrier tube of a slightly absorbing metal with an order number not higher than 35, which surrounds a tubular detector and which carries several annular filter parts on its surface. (orig./HP) [de

Efficient fluorescent red, green, and blue organic light-emitting devices with a blue host of spirobifluorene derivative

Energy Technology Data Exchange (ETDEWEB)

Lee, R.-H. [Department of Chemical and Material Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan (China)], E-mail: lerongho@yuntech.edu.tw; Huang, Y.-W.; Wang, Y.-Y. [Department of Chemical and Material Engineering, National Yunlin University of Science and Technology, Yunlin 640, Taiwan (China); Chang, H.-Y. [EChem Hightech CO., LTD, Hsin-Chu Industrial Park, Hu-Kou, Hsin-Chu, Taiwan (China)

2008-06-02

Efficient fluorescent blue, green, and red (RGB) organic light-emitting devices (OLEDs) were fabricated using a blue host material of pyrimidine-containing spirobifluorene derivative 2,7-bis[2-(4-tert-butylphenyl)pyrimidine-5-yl]-9,9'-spirobifluorene (TBPSF) doped with blue dye perylene, green dye 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-benzo[l] pyrano[6,7,8-ij] quinolizin-11-one (C545T), and red dye 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB), respectively. The brightness and current efficiency of the perylene doped blue device reached 10117 cd/m{sup 2} and 2.97 cd/A. Green emission of the C545T doped device reached 8500 cd/m{sup 2} and 13.0 cd/A. Red emission of the DCJTB doped device can be as high as 9000 cd/m{sup 2} and 2.0 cd/A, respectively. High color purity of the blue (Commission Internationale de L'Eclairage (CIE{sub x,y}) coordinates (CIE, x = 0.27, y = 0.24)), green (CIE, x = 0.19, y = 0.63) and red (CIE, x = 0.62, y = 0.37) emissions were achieved for RGB dyes doped TBPSF OLEDs. High brightness, large current efficiency, and good color purity of TBPSF-based RGB OLEDs were obtained by the configuration optimization device, such as inserting the hole and electron-injection materials, and suitable dopant content and light emitting layer thickness.

Particle interaction and displacement damage in silicon devices operated in radiation environments

International Nuclear Information System (INIS)

Leroy, Claude; Rancoita, Pier-Giorgio

2007-01-01

Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest

Transient radiation effects in GaAs semiconductor devices

International Nuclear Information System (INIS)

Chang, J.Y.; Stauber, M.; Ezzeddine, A.; Howard, J.W.; Constantine, A.G.; Becker, M.; Block, R.C.

1988-01-01

This paper describes an ongoing program to identify the response of GaAs devices to intense pulses of ionizing radiation. The program consists of experimental measurements at the Rensselaer Polytechnic Institute's RPI electron linear accelerator (Linac) on generic GaAs devices built by Grumman Tachonics Corporation and the analysis of these results through computer simulation with the circuit model code SPICE (including radiation effects incorporated in the variations TRISPICE and TRIGSPICE and the device model code PISCES IIB). The objective of this program is the observation of the basic response phenomena and the development of accurate simulation tools so that results of Linac irradiations tests can be understood and predicted

Impact of electromagnetic radiation emitted by monitors on changes in the cellular membrane structure and protective antioxidant effect of vitamin A - In vitro study.

Science.gov (United States)

Lewicka, Małgorzata; Henrykowska, Gabriela; Zawadzka, Magdalena; Rutkowski, Maciej; Pacholski, Krzysztof; Buczyński, Andrzej

2017-07-14

The increasing number of devices emitting electromagnetic radiation (EMR) in people's everyday life attracted the attention of researchers because of possible adverse effects of this factor on living organisms. One of the EMR effect may be peroxidation of lipid membranes formed as a result of free radical process. The article presents the results of in vitro studies aimed at identifying changes in malondialdehyde (MDA) concentration - a marker of lipid peroxidation and antioxidant role of vitamin A during the exposure of blood platelets to electromagnetic radiation generated by liquid-crystal-display (LCD) monitors. Electromagnetic radiation emitted by LCD monitors is characterized by parameters: 1 kHz frequency and 220 V/m intensity (15 cm from display screen). The time of exposure was 30 and 60 min. The study was conducted on porcine blood platelets. The samples were divided into 6 groups: unexposed to radiation, unexposed + vitamin A, exposed for 30 min, exposed for 30 min + vitamin A, exposed for 60 min, exposed for 60 min + vitamin A. The MDA concentration in blood platelets increases significantly as compared to control values after 60 min of exposure to EMR. A significant decrease in MDA concentration after the addition of vitamin A was noticed. In the blood samples exposed to EMR for 30 and 60 min the MDA concentration was significantly increased by addition of vitamin A. The results show the possibly negative effect of electromagnetic radiation on the cellular membrane structure manifested by changes in malondialdehyde concentration and indicate a possible protective role of vitamin A in this process. Int J Occup Med Environ Health 2017;30(5):695-703. This work is available in Open Access model and licensed under a CC BY-NC 3.0 PL license.

High efficiency rubrene based inverted top-emission organic light emitting devices with a mixed single layer

International Nuclear Information System (INIS)

Wang, Zhaokui; Lou, Yanhui; Naka, Shigeki; Okada, Hiroyuki

2010-01-01

Inverted top-emission organic light emitting devices (TEOLEDs) with a mixed single layer by mixing of electron transport materials (PyPySPyPy and Alq 3 ), hole transport material (α-NPD) and dope material (rubrene) were investigated. Maximum power efficiency of 3.5 lm/W and maximum luminance of 7000 cd/m 2 were obtained by optimizing the mixing ratio of PyPySPyPy:Alq 3 :α-NPD:rubrene=25:50:25:1. Luminance and power efficiency of mixed single layer device were two times improved compared to bi-layer heterojunction device and tri-layer heterojunction device. Lifetime test also shows that the mixed single layer device exhibits longer operational lifetimes of 343 h, which is three times longer than the 109 h for tri-layer device, and two times longer than the 158 h for bi-layer device. In addition, the maximum luminance and power efficiency were obtained at 20,000 cd/m 2 and 7.5 lm/W, respectively, when a TPD layer of 45 nm was capped onto the top metal electrode.

Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

Energy Technology Data Exchange (ETDEWEB)

Zhang, Feng; Wang, Yaling; Miao, Yanqin; Yang, Yongzhen, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); Research Center on Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024 (China); He, Yuheng; Liu, Xuguang, E-mail: yyztyut@126.com, E-mail: liuxuguang@tyut.edu.cn [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

2016-08-22

Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral composition of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.

Radiation dose distributions due to sudden ejection of cobalt device.

Science.gov (United States)

Abdelhady, Amr

2016-09-01

The evaluation of the radiation dose during accident in a nuclear reactor is of great concern from the viewpoint of safety. One of important accident must be analyzed and may be occurred in open pool type reactor is the rejection of cobalt device. The study is evaluating the dose rate levels resulting from upset withdrawal of co device especially the radiation dose received by the operator in the control room. Study of indirect radiation exposure to the environment due to skyshine effect is also taken into consideration in order to evaluate the radiation dose levels around the reactor during the ejection trip. Microshield, SHLDUTIL, and MCSky codes were used in this study to calculate the radiation dose profiles during cobalt device ejection trip inside and outside the reactor building. Copyright © 2016 Elsevier Ltd. All rights reserved.

The transient radiation effects and hardness of programmed device

International Nuclear Information System (INIS)

Du Chuanhua; Xu Xianguo; Zhao Hailin

2014-01-01

A review and summary of research and development in the investigation of transient ionizing radiation effects in device and cirviut is presented. The transient ionizing radiation effects in two type of programmed device, that's 32 bit Microcontroller and antifuse FPGA, were studied. The expeiment test data indicate: The transient ionizing radiation effects of 32 bit Microcontroller manifested self-motion restart and Latchup, the Latchup threshold was 5 × 10"7 Gy (Si)/s. The transient ionizing radiation effects of FPGA was reset, no Latchup. The relationship of circuit effects to physical mechanisms was analized. A new method of hardness in circiut design was put forward. (authors)

Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

International Nuclear Information System (INIS)

Demir, Nuriye; Oner, Ilker; Varlikli, Canan; Ozsoy, Cihan; Zafer, Ceylan

2015-01-01

Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m 2 , maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%

Efficiency enhancement in a single emission layer yellow organic light emitting device: Contribution of CIS/ZnS quantum dot

Energy Technology Data Exchange (ETDEWEB)

Demir, Nuriye; Oner, Ilker; Varlikli, Canan, E-mail: canan.varlikli@ege.edu.tr; Ozsoy, Cihan; Zafer, Ceylan

2015-08-31

Electroluminescence (EL) efficiency from a single emission layer solution processed yellow emitting polymer, i.e. poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,10,3}-thiadiazole)] end-capped with dimethylphenyl (ADS233YE), is firstly enhanced by the optimization of stock polymer concentrations and the coating rates, and then with the addition of copper indium disulfide/zinc sulfide (CIS/ZnS) core/shell quantum dots (QDs). Using these bare core/shell QDs as the active layer in the studied device gave no EL at all. However, yellow EL with the maximum brightness of 56834 cd/m{sup 2}, maximum current efficiency of 4.7 cd/A and maximum power efficiency of 2.3 lm/W is obtained from the device structure of indium tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/ADS233YE:0.4 wt.% CIS/ZnS QD/Ca/Al those of which correspond to approximately 4 and 2 folds of enhancements in the brightness and luminous and power efficiency values, respectively, compared to that of the device without CIS/ZnS. - Highlights: • Copper indium disulfide/zinc sulfide (CIS/ZnS) particles are synthesized. • Polymer light emitting diode performance of a yellow emitting polymer is enhanced. • The presence of CIS/ZnS in active layer enhanced the power efficiency two folds. • Optimum concentration of CIS/ZnS in polymer is 0.4 wt.%.

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

Science.gov (United States)

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

Radiation dose distributions due to sudden ejection of cobalt device

International Nuclear Information System (INIS)

Abdelhady, Amr

2016-01-01

The evaluation of the radiation dose during accident in a nuclear reactor is of great concern from the viewpoint of safety. One of important accident must be analyzed and may be occurred in open pool type reactor is the rejection of cobalt device. The study is evaluating the dose rate levels resulting from upset withdrawal of co device especially the radiation dose received by the operator in the control room. Study of indirect radiation exposure to the environment due to skyshine effect is also taken into consideration in order to evaluate the radiation dose levels around the reactor during the ejection trip. Microshield, SHLDUTIL, and MCSky codes were used in this study to calculate the radiation dose profiles during cobalt device ejection trip inside and outside the reactor building. - Highlights: • This study aims to calculate the dose rate profiles after cobalt device ejection from open-pool-type reactor core. • MicroShield code was used to evaluate the dose rates inside the reactor control room. • McSKY code was used to evaluate the dose rates outside the reactor building. • The calculated dose rates for workers are higher than the permissible limits after 18 s from device ejection.

Decay Curves and Half-Lives of Gamma-Emitting States from a Study of Prompt Fission Gamma Radiation

Energy Technology Data Exchange (ETDEWEB)

Albinsson, H [Chalmers Univ. of Technology, Goeteborg (SE)

1971-04-15

Measurements were made on the time distributions of the prompt gamma radiation emitted from fragments in the thermal-neutron induced fission of 235U. The gamma radiation emitted during different time intervals after the fission event was studied with the help of a collimator, the position of which was changed along the path of the fragments. In this way decay curves were obtained from which half-lives could be estimated. Time components with half-lives of 7.5, 18 and 60 ps were found and their relative intensities were calculated. Half-lives and associated intensities are in good agreement with earlier data from uranium and californium fission. Problems involved in this type of study are discussed. The collimator technique has proved to be effective for determination of half lives down to less than 10 ps

Combined Natural Convection and Radiation Heat Transfer of Various Absorbing-Emitting-Scattering Media in a Square Cavity

Directory of Open Access Journals (Sweden)

Xianglong Liu

2014-01-01

Full Text Available A numerical model is developed to simulate combined natural convection and radiation heat transfer of various anisotropic absorbing-emitting-scattering media in a 2D square cavity based on the discrete ordinate (DO method and Boussinesq assumption. The effects of Rayleigh number, optical thickness, scattering ratio, scattering phase function, and aspect ratio of square cavity on the behaviors of heat transfer are studied. The results show that the heat transfer of absorbing-emitting-scattering media is the combined results of radiation and natural convection, which depends on the physical properties and the aspect ratio of the cavity. When the natural convection becomes significant, the convection heat transfer is enhanced, and the distributions of NuR and Nuc along the walls are obviously distorted. As the optical thickness increases, NuR along the hot wall decreases. As the scattering ratio decreases, the NuR along the walls decreases. At the higher aspect ratio, the more intensive thermal radiation and natural convection are formed, which increase the radiation and convection heat fluxes. This paper provides the theoretical research for the optimal thermal design and practical operation of the high temperature industrial equipments.

Tm2+ luminescent materials for solar radiation conversion devices

NARCIS (Netherlands)

Van der Kolk, E.

2015-01-01

A solar radiation conversion device is described that comprises a luminescent Tm 2+ inorganic material for converting solar radiation of at least part of the UV and/or visible and/or infra red solar spectrum into infrared solar radiation, preferably said infrared solar radiation having a wavelength

Ordinance of 12 January 1972 on Radiation Protection

International Nuclear Information System (INIS)

1972-01-01

This Ordinance made under the 1969 Act on Radiation Protection aims to supplement the Act with many detailed provisions on protection against ionizing radiation. It is divided into 4 parts: the first covers definitions on radiation protection, which are generally the same as those of the 1969 Act; the second relates to radiation-emitting equipment, in particular X-ray devices and particle accelerators; the third concerns radioactive materials and the fourth nuclear installations. (NEA) [fr

Infrared light-emitting diode radiation causes gravitropic and morphological effects in dark-grown oat seedlings

Science.gov (United States)

Johnson, C. F.; Brown, C. S.; Wheeler, R. M.; Sager, J. C.; Chapman, D. K.; Deitzer, G. F.

1996-01-01

Oat (Avena sativa cv Seger) seedlings were irradiated with IR light-emitting diode (LED) radiation passed through a visible-light-blocking filter. Infrared LED irradiated seedlings exhibited differences in growth and gravitropic response when compared to seedlings grown in darkness at the same temperature. Thus, the oat seedlings in this study were able to detect IR LED radiation. These findings call into question the use of IR LED as a safe-light for some photosensitive plant response experiments. These findings also expand the defined range of wavelengths involved in radiation-gravity (light-gravity) interactions to include wavelengths in the IR region of the spectrum.

Radiation effects on custom MOS devices

International Nuclear Information System (INIS)

Harris, R.

1999-05-01

This Thesis consists of four chapters: The first is primarily for background information on the effects of radiation on MOS devices and the theory of wafer bonding; the second gives a full discussion of all practical work carried out for manufacture of Field Effect test Capacitors, the third discusses manufacture of vacuum insulator Field Effect Transistors (FET's) and the fourth discusses the testing of these devices. Using a thermally bonded field effect capacitor structure, a vacuum dielectric was studied for use in high radiation environments with a view to manufacturing a CMOS compatible, micro machined transistor. Results are given in the form of high frequency C-V curves before and after a 120 kGy(Si), 12 MRad(Si), dose from a Co 60 source showing a 1 Volt shift. The work is then extended to the design and manufacture of a micro machined, under-etch technique, Field Effect Transistor for use in high radiation areas. Results are shown for Threshold, Subthreshold and Transfer characteristics before and after irradiation up to a total dose of 100kGy or 10MRad. The conclusion from this work is that it should be possible to commercially manufacture practical vacuum dielectric field effect transistors which are radiation hard to at least 120 kGy(Si). (author)

High Intensity Organic Light-emitting Diodes

Science.gov (United States)

Qi, Xiangfei

This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

Directory of Open Access Journals (Sweden)

S.-T. Pham

2018-02-01

Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

Science.gov (United States)

Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

2018-02-01

Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

Decoupling degradation in exciton formation and recombination during lifetime testing of organic light-emitting devices

Science.gov (United States)

Hershey, Kyle W.; Suddard-Bangsund, John; Qian, Gang; Holmes, Russell J.

2017-09-01

The analysis of organic light-emitting device degradation is typically restricted to fitting the overall luminance loss as a function of time or the characterization of fully degraded devices. To develop a more complete understanding of degradation, additional specific data are needed as a function of luminance loss. The overall degradation in luminance during testing can be decoupled into a loss in emitter photoluminescence efficiency and a reduction in the exciton formation efficiency. Here, we demonstrate a method that permits separation of these component efficiencies, yielding the time evolution of two additional specific device parameters that can be used in interpreting and modeling degradation without modification to the device architecture or introduction of any additional post-degradation characterization steps. Here, devices based on the phosphor tris[2-phenylpyridinato-C2,N]iridium(III) (Ir(ppy)3) are characterized as a function of initial luminance and emissive layer thickness. The overall loss in device luminance is found to originate primarily from a reduction in the exciton formation efficiency which is exacerbated in devices with thinner emissive layers. Interestingly, the contribution to overall degradation from a reduction in the efficiency of exciton recombination (i.e., photoluminescence) is unaffected by thickness, suggesting a fixed exciton recombination zone width and degradation at an interface.

[Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

Science.gov (United States)

Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

2010-06-01

The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

White organic light emitting devices with hybrid emissive layers combining phosphorescence and fluorescence

Energy Technology Data Exchange (ETDEWEB)

Lei Gangtie; Chen Xiaolan; Wang Lei; Zhu Meixiang; Zhu Weiguo [Key Lab of Environmental-friendly Chemistry and Application of Ministry of Education, College of Chemistry, Xiangtan University, Xiangtan 411105 (China); Wang Liduo; Qiu Yong [Key Lab of Organic-Optoelectronics and Molecular Sciences of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)], E-mail: lgt@xtu.edu.cn

2008-05-21

We fabricated a white organic light-emitting diode (WOLED) by hybrid emissive layers which combined phosphorescence with fluorescence. In this device, the thin layer of 4-(dicyanomethylene)-2-(t-butyl)-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran played the role of undoped red emissive layer which was inserted between two blue phosphorescence emissive layers. The blue phosphorescent dye was bis[(4, 6-difluorophenyl)-pyridinato-N, C{sup 2}] (picolinato) Ir(III), which was doped in the host material, N, N'-dicarbazolyl-1, 4-dimethene-benzene. The WOLED showed stable Commission Internationale de L'Eclairage coordinates and a high efficency of 9.6 cd A{sup -1} when the current density was 1.8 A m{sup -2}. The maximum luminance of the device achieved was 17 400 cd m{sup -2} when the current density was 3000 A m{sup -2}.

Device Engineering and Degradation Mechanism Study of All-Phosphorescent White Organic Light-Emitting Diodes

Science.gov (United States)

Xu, Lisong

As a possible next-generation solid-state lighting source, white organic light-emitting diodes (WOLEDs) have the advantages in high power efficiency, large area and flat panel form factor applications. Phosphorescent emitters and multiple emitting layer structures are typically used in high efficiency WOLEDs. However due to the complexity of the device structure comprising a stack of multiple layers of organic thin films, ten or more organic materials are usually required, and each of the layers in the stack has to be optimized to produce the desired electrical and optical functions such that collectively a WOLED of the highest possible efficiency can be achieved. Moreover, device degradation mechanisms are still unclear for most OLED systems, especially blue phosphorescent OLEDs. Such challenges require a deep understanding of the device operating principles and materials/device degradation mechanisms. This thesis will focus on achieving high-efficiency and color-stable all-phosphorescent WOLEDs through optimization of the device structures and material compositions. The operating principles and the degradation mechanisms specific to all-phosphorescent WOLED will be studied. First, we investigated a WOLED where a blue emitter was based on a doped mix-host system with the archetypal bis(4,6-difluorophenyl-pyridinato-N,C2) picolinate iridium(III), FIrpic, as the blue dopant. In forming the WOLED, the red and green components were incorporated in a single layer adjacent to the blue layer. The WOLED efficiency and color were optimized through variations of the mixed-host compositions to control the electron-hole recombination zone and the dopant concentrations of the green-red layers to achieve a balanced white emission. Second, a WOLED structure with two separate blue layers and an ultra-thin red and green co-doped layer was studied. Through a systematic investigation of the placement of the co-doped red and green layer between the blue layers and the material

Regulations on the supervision and use of installations, apparatus, material and substances which release ionizing or other radiation representing danger to health (23 January 1976)

International Nuclear Information System (INIS)

These Regulations repeal the Regulations of 22 October 1948 on the surveillance of facilities using X-rays and radium. They were issued in the Norwegian Official Gazette, 1st Section of 3 February 1976, and contain instructions on the control and use of facilities, devices, equipment and substances emitting ionizing radiation hazardous to health. This control applies to use for medical, veterinary, scientific, industrial or to ionizing radiation for other purposes as well as to all vessels, waste and discharge of substances emitting ionizing radiation. Finally, the Regulations specify the competent body, the type of devices concerned, and the duties of persons using such devices. (NEA) [fr

Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

Energy Technology Data Exchange (ETDEWEB)

Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

2014-04-15

In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

Analysis of chemical degradation mechanism of phosphorescent organic light emitting devices by laser-desorption/ionization time-of-flight mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Rabelo de Moraes, Ines; Scholz, Sebastian; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden (Germany)

2010-07-01

Phosphorescent organic light emitting diodes (OLEDs) have attracted much interest for their potential application in full color flat-panel displays and as an alternative lighting source. However, low efficiency, and the short operation lifetime, in particular in the case of blue emitting devices, are the major limitations for the current OLEDs commercialization. In order to overcome these limitations, a deep knowledge about the aging and the degradation mechanism is required. Our work focuses on the chemical degradation mechanism of different iridium based emitter materials like FIrpic (light blue) and Ir(ppy)3 (green), commonly used in OLEDs. For this purpose, the devices were aged by electrical driving until the luminance reached 6% of the initial luminance. The laser-desorption/ionization time-of-flight mass spectrometry was used to determine specific degradation pathways.

Conducted and radiated noise in detection devices

International Nuclear Information System (INIS)

Moisa, D.

2001-01-01

Conducted and radiated noise is an external noise which affects the quality of the signals of the detectors. An external noise can be reduced, usually, by shielding. This was the situation with 'older fashion' devices which uses boxes and coaxial cables. As the devices becomes more complex, the shielding of the detectors is more and more difficult and the transmission lines evolves from coaxial cables to twisted pair cables which are no more shielded. In such situation, the conducted and radiated noise (C and R noise) becomes important. Due to complexity of a real detector, the main work is based on experiments with components and simulations of some specific problems, associated with CDC detector. The first experiment was done to understand how the C and R noise is propagated. The emission device was a set of coils (between 3 and 5 turns with diameter from 10 to 50 mm) feed by an 74S140 driver. A pulse of about 8 ns width was generated. A coil of reception of about the same physical characteristics was used to see the emitted pulse. When the two coils are separated by about 80 cm, the receiver generated no signal. But, if along the two coils, a conductive material is introduced (a wire for instance), the receiver senses a signal. This signal is not changed too much if the wire is or not connected to ground. The explanation is simple: the pulse in the emitting coil produces an EM pulse which spreads in space. If a conductive material is around, the EM energy is received by that conductor and it is propagated at tens of meters with small attenuation. When this energy reaches the end of the conductor, it is radiated in space. If some other conductors are around, the energy is received and propagated by that conductors. This experiment was done for about 20 kinds of conductors (different coax cables, twisted-pair ribbons, power cables, metallic bars) and with many coils (different diameters and numbers of turns). It was measured the pk-to-pk level, decay constant and

Development of Quantum Devices and Algorithms for Radiation Detection and Radiation Signal Processing

International Nuclear Information System (INIS)

El Tokhy, M.E.S.M.E.S.

2012-01-01

The main functions of spectroscopy system are signal detection, filtering and amplification, pileup detection and recovery, dead time correction, amplitude analysis and energy spectrum analysis. Safeguards isotopic measurements require the best spectrometer systems with excellent resolution, stability, efficiency and throughput. However, the resolution and throughput, which depend mainly on the detector, amplifier and the analog-to-digital converter (ADC), can still be improved. These modules have been in continuous development and improvement. For this reason we are interested with both the development of quantum detectors and efficient algorithms of the digital processing measurement. Therefore, the main objective of this thesis is concentrated on both 1. Study quantum dot (QD) devices behaviors under gamma radiation 2. Development of efficient algorithms for handling problems of gamma-ray spectroscopy For gamma radiation detection, a detailed study of nanotechnology QD sources and infrared photodetectors (QDIP) for gamma radiation detection is introduced. There are two different types of quantum scintillator detectors, which dominate the area of ionizing radiation measurements. These detectors are QD scintillator detectors and QDIP scintillator detectors. By comparison with traditional systems, quantum systems have less mass, require less volume, and consume less power. These factors are increasing the need for efficient detector for gamma-ray applications such as gamma-ray spectroscopy. Consequently, the nanocomposite materials based on semiconductor quantum dots has potential for radiation detection via scintillation was demonstrated in the literature. Therefore, this thesis presents a theoretical analysis for the characteristics of QD sources and infrared photodetectors (QDIPs). A model of QD sources under incident gamma radiation detection is developed. A novel methodology is introduced to characterize the effect of gamma radiation on QD devices. The rate

Evaluation of scattered radiation emitted from X-ray security scanners on occupational dose to airport personnel

International Nuclear Information System (INIS)

Dalah, Entesar; Fakhry, Angham; Mukhtar, Asma; Al Salti, Farah; Bader, May; Khouri, Sara; Al-Zahmi, Reem

2017-01-01

Based on security issues and regulations airports are provided with luggage cargo scanners. These scanners utilize ionizing radiation that in principle present health risks toward humans. The study aims to investigate the amount of backscatter produced by passenger luggage and cargo toward airport personnel who are located at different distances from the scanners. To approach our investigation a Thermo Electron Radeye-G probe was used to quantify the backscattered radiation measured in terms of dose-rate emitted from airport scanners, Measurements were taken at the entrance and exit positions of the X-ray tunnel at three different distances (0, 50, and 100 cm) for two different scanners; both scanners include shielding curtains that reduce scattered radiation. Correlation was demonstrated using the Pearson coefficient test. Measurements confirmed an inverse relationship between dose rate and distance. An estimated occupational accumulative dose of 0.88 mSv/y, and 2.04 mSv/y were obtained for personnel working in inspection of carry-on, and cargo, respectively. Findings confirm that the projected dose of security and engineering staff are being well within dose limits. - Highlights: • Backscattered radiation emitted from the airport security scanners is estimated. • Inverse relation observed between backscattered radiation and scanners distance. • Occupational dose for personnel inspecting the scanners were up to 2.04 mSv/y. • The projected dose of security and engineering staff are well within dose limits.

All-Quantum-Dot Infrared Light-Emitting Diodes

KAUST Repository

Yang, Zhenyu

2015-12-22

© 2015 American Chemical Society. Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Advanced light emitting device structures for optoelectronic applications

International Nuclear Information System (INIS)

Kovac, J.

2002-01-01

Several factors are driving the recent development of light emitting devices (LED,s). The most important ones are brightness, available efficiency, architecture form flexibility, rugged construction and low applied voltages. These are contributing to growth in markets such as traffic lights, automotive brake signals and instrument displays, video displays, traffic signals, decorative signs and the many uses of the new white LED-based products. A new developments are directed to various materials used for high brightness HB-LED,s based on AlGaAs (red), AlInGaP (yellow-green to red) and InGaN (blue, green and white) devices. The development of LED,s depends on epitaxial growth advances, mainly molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). As a technology improved, the performace of visible LED,s increased at the rate 10x per decade from less than 0.1 lm/W to the best red and orange LED,s now providing about 100 lm/W. The main engineering challenge is now the extraction or the ability to get all the light out of the chip to where it is needed. This has led to novel changes in the shape of the LED chip and to the replacement of GaAs with transparent GaP substrate throught wafer bonding after the LED has been produced. Most of the focus for nitride devices (InGaN) is to develop improved or new substrate materials to replace sapphire and enable the growth of lower defect density materials. Organic LED,s (OLED,s) have been undergone dramatic improvements in performace in the last five years. Two main technologies for OLED,s have emerged in the last decade, either based on conjaguated polymers, or sublimed films of small molecules. Recent improvements have taken OLED,s to luminous efficiency greater than 20 lm/W. However, in contrast to conventional LED,s, OLED,s share many of the properties associated with other organic substances and polymers. They allow more design flexibility than inorganic LED,s and thus lead to the high

Evaluation of an enclosed ultraviolet-C radiation device for decontamination of mobile handheld devices.

Science.gov (United States)

Mathew, J Itty; Cadnum, Jennifer L; Sankar, Thriveen; Jencson, Annette L; Kundrapu, Sirisha; Donskey, Curtis J

2016-06-01

Mobile handheld devices used in health care settings may become contaminated with health care-associated pathogens. We demonstrated that an enclosed ultraviolet-C radiation device was effective in rapidly reducing methicillin-resistant Staphylococcus aureus, and with longer exposure times, Clostridium difficile spores, on glass slides and reducing contamination on in-use mobile handheld devices. Published by Elsevier Inc.

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

International Nuclear Information System (INIS)

Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

2013-01-01

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

International Nuclear Information System (INIS)

Wang Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Gaspar, Daniel J.; Padmaperuma, Asanga B.; Berry, Joseph J.; Ginley, David S.

2010-01-01

Organic light emitting devices have been achieved with an indium-free transparent anode, Ga doped ZnO (GZO). A large area coating technique was used (RF magnetron sputtering) to deposit the GZO films onto glass. The respective organic light emitting devices exhibited an operational voltage of 3.7 V, an external quantum efficiency of 17%, and a power efficiency of 39 lm/W at a current density of 1 mA/cm 2 . These parameters are well within acceptable standards for blue OLEDs to generate a white light with high enough brightness for general lighting applications. It is expected that high-efficiency, long-lifetime, large area, and cost-effective white OLEDs can be made with these indium-free anode materials.

Using a Commercial Ethernet PHY Device in a Radiation Environment

Science.gov (United States)

Parks, Jeremy; Arani, Michael; Arroyo, Roberto

2014-01-01

This work involved placing a commercial Ethernet PHY on its own power boundary, with limited current supply, and providing detection methods to determine when the device is not operating and when it needs either a reset or power-cycle. The device must be radiation-tested and free of destructive latchup errors. The commercial Ethernet PHY's own power boundary must be supplied by a current-limited power regulator that must have an enable (for power cycling), and its maximum power output must not exceed the PHY's input requirements, thus preventing damage to the device. A regulator with configurable output limits and short-circuit protection (such as the RHFL4913, rad hard positive voltage regulator family) is ideal. This will prevent a catastrophic failure due to radiation (such as a short between the commercial device's power and ground) from taking down the board's main power. Logic provided on the board will detect errors in the PHY. An FPGA (field-programmable gate array) with embedded Ethernet MAC (Media Access Control) will work well. The error detection includes monitoring the PHY's interrupt line, and the status of the Ethernet's switched power. When the PHY is determined to be non-functional, the logic device resets the PHY, which will often clear radiation induced errors. If this doesn't work, the logic device power-cycles the FPGA by toggling the regulator's enable input. This should clear almost all radiation induced errors provided the device is not latched up.

Radiation detection and measurement concepts, methods and devices

CERN Document Server

McGregor, Douglas

2019-01-01

This text on radiation detection and measurement is a response to numerous requests expressed by students at various universities, in which the most popularly used books do not provide adequate background material, nor explain matters in understandable terms. This work provides a modern overview of radiation detection devices and radiation measurement methods. The topics selected in the book have been selected on the basis of the author’s many years of experience designing radiation detectors and teaching radiation detection and measurement in a classroom environment.

Solution-processed white organic light-emitting devices based on small-molecule materials

International Nuclear Information System (INIS)

Wang Dongdong; Wu Zhaoxin; Zhang Xinwen; Wang Dawei; Hou Xun

2010-01-01

We investigated solution-processed films of 4,4'-bis(2,2-diphenylvinyl)-1,1'-bibenyl (DPVBi) and its blends with N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m 2 , a maximum luminance of 22500 cd/m 2 , and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.

Low-voltage and high-efficiency white organic light emitting devices with carrier balance

International Nuclear Information System (INIS)

Wei Fuxiang; Huang, Y.; Fang, L.

2010-01-01

White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

Improvement of a device for region radiation survey

International Nuclear Information System (INIS)

Poltinnikov, S.A.

1978-01-01

The electromechnanical device based on coding the turning angle of an automobile wheel by the number of electric pulses controlling the step motor of a film gate of gamma radiometer is proposed. The device is intended for automatizing recordings of gamma-radiation levels depending on a certain distance in a given terrain. The device has been tested at car speeds from 10 to 80 km/hr

Ultra-thin fluoropolymer buffer layer as an anode stabilizer of organic light emitting devices

International Nuclear Information System (INIS)

Yang, Nam Chul; Lee, Jaeho; Song, Myung-Won; Ahn, Nari; Kim, Mu-Hyun; Lee, Songtaek; Chin, Byung Doo

2007-01-01

We have investigated the effect of thin fluoro-acrylic polymer as an anode stabilizer on the lifetime of an organic light emitting device (OLED). Surface chemical properties of commercial fluoropolymer, FC-722 (Fluorad(TM) of 3M), on indium-tin oxide (ITO) were characterized by x-ray photoemission spectroscopy. An OLED with 1 nm thick fluoropolymeric film showed identical brightness and efficiency behaviour and improved operational stability compared with the reference device with UV-O 3 treated ITO. The improvement in the lifetime was accompanied by the suppression of the voltage increase at the initial stage of constant-current driving, which can be attributed to the action of the FC-722 layer by smoothing the ITO surface. Fluoropolymer coating, therefore, improves the lifetime of the small molecular OLED by the simple and reliable anode-stabilizing process

Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

Science.gov (United States)

Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

2009-12-01

Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

Radiation effects on semiconductor devices in high energy heavy ion accelerators

Energy Technology Data Exchange (ETDEWEB)

Belousov, Anton

2014-10-20

Radiation effects on semiconductor devices in GSI Helmholtz Center for Heavy Ion Research are becoming more and more significant with the increase of beam intensity due to upgrades. Moreover a new accelerator is being constructed on the basis of GSI within the project of facility for antiproton and ion research (FAIR). Beam intensities will be increased by factor of 100 and energies by factor of 10. Radiation fields in the vicinity of beam lines will increase more than 2 orders of magnitude and so will the effects on semiconductor devices. It is necessary to carry out a study of radiation effects on semiconductor devices considering specific properties of radiation typical for high energy heavy ion accelerators. Radiation effects on electronics in accelerator environment may be divided into two categories: short-term temporary effects and long-term permanent degradation. Both may become critical for proper operation of some electronic devices. This study is focused on radiation damage to CCD cameras in radiation environment of heavy ion accelerator. Series of experiments with irradiation of devices under test (DUTs) by secondary particles produced during ion beam losses were done for this study. Monte Carlo calculations were performed to simulate the experiment conditions and conditions expected in future accelerator. Corresponding comparisons and conclusions were done. Another device typical for accelerator facilities - industrial Ethernet switch was tested in similar conditions during this study. Series of direct irradiations of CCD and MOS transistors with heavy ion beams were done as well. Typical energies of the primary ion beams were 0.5-1 GeV/u. Ion species: from Na to U. Intensities of the beam up to 10{sup 9} ions/spill with spill length of 200-300 ns. Criteria of reliability and lifetime of DUTs in specific radiation conditions were formulated, basing on experimental results of the study. Predictions of electronic device reliability and lifetime were

High-efficiency and heavily doped organic light-emitting devices based on quench-resistant red iridium complex

Energy Technology Data Exchange (ETDEWEB)

Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhao, Juan; Wang, Jun [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

2013-02-15

Highly efficient red phosphorescent organic light-emitting devices had been fabricated using a new iridium complex, bis[2-(9,9-dimethyl-9H-fluoren-2-yl) benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(fbt){sub 2}Ir(acac)] as phosphor. With a high doping concentration of 15 wt%, the device exhibited a maximum luminance efficiency, power efficiency and external quantum efficiency (EQE) of 35.2 cd/A, 21.3 lm/W, 18.2%, respectively, indicating an excellent quench-resistant property of (fbt){sub 2}Ir(acac). The results are appealing towards the development of 'easy-to-make' OLEDs. It has been demonstrated that the high efficiency arises from more balanced charge carriers in the emissive layer. - Highlight: Black-Right-Pointing-Pointer We obtained efficient OLEDs based on newly synthesized quench-resistant phosphor. Black-Right-Pointing-Pointer Peak performance was obtained with 15 wt% (fbt){sub 2}Ir(acac) doped device. Black-Right-Pointing-Pointer Our devices gave one of the best performance among heavily-doped red devices. Black-Right-Pointing-Pointer Balanced carrier transport is crucial for the high performance of our devices.

Radiation damage assessment of Nb tunnel junction devices

International Nuclear Information System (INIS)

King, S.E.; Magno, R.; Maisch, W.G.

1991-01-01

This paper reports on the radiation hardness of a new technology using Josephson junctions that was explored by an irradiation using a fluence of 7.6 x 10 14 protons/cm 2 at an energy of 63 MeV from the U.C. Davis cyclotron. In what the authors believe is the first radiation assessment of Nb/Al 2 O 3 /Nb devices, the permanent damage in these devices was investigated. No permanent changes in the I-V characteristics of the junctions were observed indicating no significant level of material defects have occurred at this level of irradiation

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

Science.gov (United States)

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Improved light extraction from white organic light-emitting devices using a binary random phase array

International Nuclear Information System (INIS)

Inada, Yasuhisa; Nishiwaki, Seiji; Hirasawa, Taku; Nakamura, Yoshitaka; Hashiya, Akira; Wakabayashi, Shin-ichi; Suzuki, Masa-aki; Matsuzaki, Jumpei

2014-01-01

We have developed a binary random phase array (BRPA) to improve the light extraction performance of white organic light-emitting devices (WOLEDs). We demonstrated that the scattering of incoming light can be controlled by employing diffraction optics to modify the structural parameters of the BRPA. Applying a BRPA to the substrate of the WOLED leads to enhanced extraction efficiency and suppression of angle-dependent color changes. Our systematic study clarifies the effect of scattering on the light extraction of WOLEDs

Improved light extraction from white organic light-emitting devices using a binary random phase array

Energy Technology Data Exchange (ETDEWEB)

Inada, Yasuhisa, E-mail: inada.yasuhisa@jp.panasonic.com; Nishiwaki, Seiji; Hirasawa, Taku; Nakamura, Yoshitaka; Hashiya, Akira; Wakabayashi, Shin-ichi; Suzuki, Masa-aki [R and D Division, Panasonic Corporation, 1006 Kadoma, Kadoma City, Osaka 571-8501 (Japan); Matsuzaki, Jumpei [Device Development Center, Eco Solutions Company, Panasonic Corporation, 1048 Kadoma, Osaka 571-8686 Japan (Japan)

2014-02-10

We have developed a binary random phase array (BRPA) to improve the light extraction performance of white organic light-emitting devices (WOLEDs). We demonstrated that the scattering of incoming light can be controlled by employing diffraction optics to modify the structural parameters of the BRPA. Applying a BRPA to the substrate of the WOLED leads to enhanced extraction efficiency and suppression of angle-dependent color changes. Our systematic study clarifies the effect of scattering on the light extraction of WOLEDs.

Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

Energy Technology Data Exchange (ETDEWEB)

Geng, R.; Mayhew, N. T.; Nguyen, T. D., E-mail: ngtho@uga.edu [Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

2013-12-09

We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

Lamination of organic solar cells and organic light emitting devices: Models and experiments

International Nuclear Information System (INIS)

Oyewole, O. K.; Yu, D.; Du, J.; Asare, J.; Fashina, A.; Anye, V. C.; Zebaze Kana, M. G.; Soboyejo, W. O.

2015-01-01

In this paper, a combined experimental, computational, and analytical approach is used to provide new insights into the lamination of organic solar cells and light emitting devices at macro- and micro-scales. First, the effects of applied lamination force (on contact between the laminated layers) are studied. The crack driving forces associated with the interfacial cracks (at the bi-material interfaces) are estimated along with the critical interfacial crack driving forces associated with the separation of thin films, after layer transfer. The conditions for successful lamination are predicted using a combination of experiments and computational models. Guidelines are developed for the lamination of low-cost organic electronic structures

Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

International Nuclear Information System (INIS)

Geng, R.; Mayhew, N. T.; Nguyen, T. D.

2013-01-01

We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model

Characteristics of withstanding radiation damage of InP crystals and devices

International Nuclear Information System (INIS)

Yamaguchi, Masafumi; Ando, Koshi

1988-01-01

Recently, the authors discovered that the characteristics of with standing radiation damage of InP crystals and devices (solar cells) are superior to those of Si and GaAs crystals and devices. Also the restoration phenomena at room temperature of radiation deterioration and the accelerated anneal phenomena by light irradiation and the injection of other minority, carriers in InP system devices were found. Such excellent characteristics suggested that InP devices are promising for the use in space. In this paper, taking an example of solar cells, the radiation resistance characteristics and their mechanism of InP crystals and devices are reported, based on the results of analysis by deep level transient spectroscopy and others. In InP solar cells, the high efficiency of photoelectric conversion was maintained even in the high dose irradiation of 1 MeV electron beam. As the carrier concentration in InP crystals is higher, they are stronger against radiation. With the increase of carrier concentration, the rate of anneal of radiation deterioration at room temperature increased. The accelerated anneal effect by minority carrier injection was remarkable in n + -p junction cells. The excellent characteristics of InP crystals are due to the formation of Frenkel defects of P and their instability. (K.I.)

Fabrication and characterization of UV-emitting nanoparticles as novel radiation sensitizers targeting hypoxic tumor cells

Science.gov (United States)

Squillante, Michael R.; Jüstel, Thomas; Anderson, R. Rox; Brecher, Charles; Chartier, Daniel; Christian, James F.; Cicchetti, Nicholas; Espinoza, Sara; McAdams, Daniel R.; Müller, Matthias; Tornifoglio, Brooke; Wang, Yimin; Purschke, Martin

2018-06-01

Radiation therapy is one of the primary therapeutic techniques for treating cancer, administered to nearly two-thirds of all cancer patients. Although largely effective in killing cancer cells, radiation therapy, like other forms of cancer treatment, has difficulty dealing with hypoxic regions within solid tumors. The incomplete killing of cancer cells can lead to recurrence and relapse. The research presented here is investigating the enhancement of the efficacy of radiation therapy by using scintillating nanoparticles that emit UV photons. UV photons, with wavelengths between 230 nm and 280 nm, are able to inactivate cells due to their direct interaction with DNA, causing a variety of forms of damage. UV-emitting nanoparticles will enhance the treatment in two ways: first by generating UV photons in the immediate vicinity of cancer cells, leading to direct and oxygen-independent DNA damage, and second by down-converting the applied higher energy X-rays into softer X-rays and particles that are more efficiently absorbed in the targeted tumor region. The end result will be nanoparticles with a higher efficacy in the treatment of hypoxic cells in the tumor, filling an important, unmet clinical need. Our preliminary experiments show an increase in cell death using scintillating LuPO4:Pr nanoparticles over that achieved by the primary radiation alone. This work describes the fabrication of the nanoparticles, their physical characterization, and the spectroscopic characterization of the UV emission. The work also presents in vitro results that demonstrate an enhanced efficacy of cell killing with x-rays and a low unspecific toxicity of the nanoparticles.

Portable Wireless Device Threat Assessment for Aircraft Navigation Radios

Science.gov (United States)

Nguyen, Truong X.; Koppen, Sandra V.; Ely, Jay J.; Williams, Reuben A.; Smith, Laura J.; Salud, Maria Theresa P.

2004-01-01

This paper addresses the concern for Wireless Local Area Network devices and two-way radios to cause electromagnetic interference to aircraft navigation radio systems. Spurious radiated emissions from various IEEE 802.11a, 802.11b, and Bluetooth devices are characterized using reverberation chambers. The results are compared with baseline emissions from standard laptop computer and personal digital assistants (PDAs) that are currently allowed for use on aircraft. The results indicate that the WLAN devices tested are not more of a threat to aircraft navigation radios than standard laptop computers and PDAs in most aircraft bands. In addition, spurious radiated emission data from seven pairs of two-way radios are provided. These two-way radios emit at much higher levels in the bands considered. A description of the measurement process, device modes of operation and the measurement results are reported.

Assessment of radiation emitted by the colour video monitors using a silicon surface-barrier detection system

International Nuclear Information System (INIS)

Tykva, R.; Sabol, J.

1998-01-01

About 5% of the commonly used colour monitors tested showed radiation levels on the screen surface approaching the dose rate of 5 μGy/h. There is practically no difference between 'low radiation' monitors and other monitors. The level of radiation emitted to the sides is generally higher than that of X-ray photons emerging from the surface of the screen. Although the contribution to the effective dose of a person exposed to radiation from the monitors may be below the limit set for the general public, the skin and eye lens dose may reach significant levels, taking into account some factors such as a high density of monitors in small rooms, short distance, long exposure time, etc. (M.D.)

Male reproductive health under threat: Short term exposure to radiofrequency radiations emitted by common mobile jammers

Science.gov (United States)

Mortazavi, SMJ; Parsanezhad, ME; Kazempour, M; Ghahramani, P; Mortazavi, AR; Davari, M

2013-01-01

BACKGROUND: Modern life prompted man to increasingly generate, transmit and use electricity that leads to exposure to different levels of electromagnetic fields (EMFs). Substantial evidence indicates that exposure to common sources of EMF such as mobile phones, laptops or wireless internet-connected laptops decreases human semen quality. In some countries, mobile jammers are occasionally used in offices, shrines, conference rooms and cinemas to block the signal. AIMS: To the best of our knowledge, this is the first study to investigate the effect of short term exposure of human sperm samples to radiofrequency (RF) radiations emitted by common mobile jammers. SUBJECTS AND METHODS: Fresh semen samples were collected by masturbation from 30 healthy donors who had referred to Infertility Treatment Center at the Mother and Child Hospital with their wives. Female problem was diagnosed as the reason for infertility in these couples. STATISTICAL ANALYSIS: T-test and analysis of variance were used to show statistical significance. RESULTS: The motility of sperm samples exposed to jammer RF radiation for 2 or 4 h were significantly lower than those of sham-exposed samples. These findings lead us to the conclusion that mobile jammers may significantly decrease sperm motility and the couples’ chances of conception. CONCLUSION: Based on these results, it can be suggested that in countries that have not banned mobile jammer use, legislations should be urgently passed to restrict the use of these signal blocking devices in public or private places. PMID:24082653

Male reproductive health under threat: Short term exposure to radiofrequency radiations emitted by common mobile jammers

Directory of Open Access Journals (Sweden)

SMJ Mortazavi

2013-01-01

Full Text Available Background: Modern life prompted man to increasingly generate, transmit and use electricity that leads to exposure to different levels of electromagnetic fields (EMFs. Substantial evidence indicates that exposure to common sources of EMF such as mobile phones, laptops or wireless internet-connected laptops decreases human semen quality. In some countries, mobile jammers are occasionally used in offices, shrines, conference rooms and cinemas to block the signal. Aims: To the best of our knowledge, this is the first study to investigate the effect of short term exposure of human sperm samples to radiofrequency (RF radiations emitted by common mobile jammers. Subjects and Methods: Fresh semen samples were collected by masturbation from 30 healthy donors who had referred to Infertility Treatment Center at the Mother and Child Hospital with their wives. Female problem was diagnosed as the reason for infertility in these couples. Statistical Analysis: T-test and analysis of variance were used to show statistical significance. Results: The motility of sperm samples exposed to jammer RF radiation for 2 or 4 h were significantly lower than those of sham-exposed samples. These findings lead us to the conclusion that mobile jammers may significantly decrease sperm motility and the couples′ chances of conception. Conclusion: Based on these results, it can be suggested that in countries that have not banned mobile jammer use, legislations should be urgently passed to restrict the use of these signal blocking devices in public or private places.

Phosphorescent Organic Light-Emitting Devices: Working Principle and Iridium Based Emitter Materials

Directory of Open Access Journals (Sweden)

Emil J. W. List

2008-08-01

Full Text Available Even though organic light-emitting device (OLED technology has evolved to a point where it is now an important competitor to liquid crystal displays (LCDs, further scientific efforts devoted to the design, engineering and fabrication of OLEDs are required for complete commercialization of this technology. Along these lines, the present work reviews the essentials of OLED technology putting special focus on the general working principle of single and multilayer OLEDs, fluorescent and phosphorescent emitter materials as well as transfer processes in host materials doped with phosphorescent dyes. Moreover, as a prototypical example of phosphorescent emitter materials, a brief discussion of homo- and heteroleptic iridium(III complexes is enclosed concentrating on their synthesis, photophysical properties and approaches for realizing iridium based phosphorescent polymers.

Act of 21 February 1963, Stb. 82, concerning the release of nuclear energy and the use of radioactive materials and of devices emitting ionizing radiations (Nuclear Energy Act) as amended by the Act of 30 June 1967, Stb. 337, and the Act of 8 May 1974, Stb. 291

International Nuclear Information System (INIS)

1963-01-01

This basic Act governs all nuclear activities in the Netherlands and determines the Government's competence and the obligations of those involved in the nuclear field. It establishes definitions and sets up bodies to advise the Government in the different nuclear sectors and covers nuclear installations, fissionable materials, ores, radioactive materials, radiation-emitting devices and their licensing. It was brought into force progressively by decrees made in implementation of its provisions, which lay down detailed regulations for the activity concerned. The chapters of the Act not yet in force were brought into operation on 1 January 1970 by the Nuclear Energy Act (Implantation) Decree of 12 November 1969. (NEA) [fr

Luminescence of Rubrene and DCJTB molecules in organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Moon, Chang-Bum, E-mail: cbmoon@hoseo.edu [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7 (Canada); Song, Wook; Meng, Mei; Kim, Nam Ho; Yoon, Ju-An [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Kim, Woo Young, E-mail: wykim@hoseo.edu [Department of Display Engineering, Hoseo University, Sechul-Ri 160, Baebang, Asan, Chung-Nam 336-795 (Korea, Republic of); Wood, Richard; Mascher, Peter [Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S4L7 (Canada)

2014-02-15

We investigated the optical properties of light emission based on the resonance energy transfer mechanism between two molecules in the host–dopant systems. For this purpose, we fabricated the organic light-emitting devices with the different doped emissive layers. The host matrices were made of 4,4′,4″-tris(carbasol-l-nyl)triphenylamine (TCTA) and 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) molecules and the doped molecules were 5,6,11,12-tetraphenylnaphtacene (Rubrene) and 4-(Dicyanomethylene)-2-tert-butyl-6- (1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB). The concentrations of the doped molecules were 0.1%, 0.3%, 0.5%, and 0.8%. Through spectroscopic analysis using multi-peak fits with a Gaussian function to the emission spectra, we obtained the relative light intensity of the two dopants according to the doping concentrations and examined the relations between the molecular excited energy states and the nature of energy transfer in the host and dopant systems. We show that the luminous efficiency of the devices has a strong correlation between the energy transfer owing to the individual molecular intrinsic properties and the electrical characteristics associated with the bulky properties in the devices. -- Highlights: • Fabrication and characterization of the OLEDs with a host–dopant system in the emissive layer. • Investigation of the optical properties of light emission based on the resonance energy transfer mechanism between the dopant molecules. • EL and PL spectroscopic study for the structure of the molecular energy levels in the dopant molecules.

Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

International Nuclear Information System (INIS)

Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong

2009-01-01

White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W -1 at 5.5 V and a maximum luminance of 16 690 cd m -2 at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

An image scanning device using radiating energy

International Nuclear Information System (INIS)

Jacob, Daniel.

1976-01-01

Said invention relates to an image scanning device using radiating energy. More particularly, it relates to a device for generating a scanning beam of rectangular cross section from a γ or X-ray source. Said invention can be applied to radiographic units of the 'microdose' type used by airline staffs and others for the fast efficient inspection of luggage and parcels in view of detecting hidden things [fr

Medical device for applying therapeutic radiation

International Nuclear Information System (INIS)

Tokita, K.M.; Haller, B.L.

1986-01-01

A device is described for applying therapeutic radiation from a preselected radiation source to a predetermined portion of a body comprising, in combination: a body member having: an external peripheral surface; a first end surface; and a second end surface spaced from the first end surface; the body member further comprising: at least first internal walls defining a first radiation source receiving channel means spaced a preselected distance from the peripheral surface, and having: a first portion extending from the second end surface to regions adjacent the first end surface; and a second portion extending from the first portion at the first end surface to the second end surface; and, the channel means communicating with regions external the body member at the second surface whereby the radiation source of a preselected intensity inserted at least along a preselected portion of the channel means is applied to the predetermined area of the body requiring therapeutic radiation treatment

Operation control device under radiation exposure

International Nuclear Information System (INIS)

Kimura, Kiichi; Murakami, Toichi.

1994-01-01

The device of the present invention performs smooth progress of operation by remote control for a plurality of operations in periodical inspections in controlled areas of a nuclear power plant, thereby reducing the operator's exposure dose. Namely, the device monitors the progressing state of the operation by displaying the progress of operation on a CRT of a centralized control device present in a low dose area remote from an operation field through an ITV camera disposed in the vicinity of the operation field. Further, operation sequence and operation instruction procedures previously inputted in the device are indicated to the operation field through an operation instruction outputting device (field CRT) in accordance with the progress of the operation steps. On the other hand, the operation progress can be aided by inputting information from the operation field such as start or completion of the operation steps. Further, the device of the present invention can monitor the change of operation circumstances and exposure dose of operators based on the information from a radiation dose measuring device disposed in the operation circumstance and to individual operators. (I.S.)

Apparatus for minimizing radiation exposure and improving resolution in radiation imaging devices

International Nuclear Information System (INIS)

Ashe, J.B.; Williams, G.H.; Sypal, K.L.

1978-01-01

A collimator is disclosed for minimizing radiation exposure and improving resolution in radiation imaging devices. The collimator provides a penetrating beam of radiation from a source thereof, which beam is substantially non-diverging in at least one direction. In the preferred embodiment, the collimator comprises an elongated sandwich assembly of a plurality of layers of material exhibiting relatively high radiation attenuation characteristics, which attenuating layers are spaced apart and separated from one another by interleaved layers of material exhibiting relatively low radiation attenuation characteristics. The sandwich assembly is adapted for lengthwise disposition and orientation between a radiation source and a target or receiver such that the attenuating layers are parallel to the desired direction of the beam with the interleaved spacing layers providing direct paths for the radiation

Control device intended for a gamma radiation measuring instrument

International Nuclear Information System (INIS)

1976-01-01

This invention concerns a monitoring device for a gamma radiation measuring instrument or radiation meter, in which the radiation to be measured brings about, inter alia, the ionisation of a gas and the generation of current pulses. The dial of this meter is generally calibrated in roentgens per hour, i.e. in radiation rate units. This instrument of very simple design is remarkable for its operating reliability. Preferably placed at the inlet to a radioactive area, it enables every user of a ratemeter to check, over the entire measuring range of this instrument, its proper operation prior to entering the area. To this effect, the monitoring device in question has a thick wall lead castle, having an internal cavity in which is mounted a radioactive source delivering a gamma radiation with given constant characteristics, through a measurement window closed by a calibrated plug. Lead doors articulated on the castle can be superimposed on this window to bring about a given attenuation of the radiation coming from the source and delivered to the exterior of the castle [fr

Power output and efficiency of beta-emitting microspheres

International Nuclear Information System (INIS)

Cheneler, David; Ward, Michael

2015-01-01

Current standard methods to calculate the dose of radiation emitted during medical applications by beta-minus emitting microspheres rely on an over-simplistic formalism. This formalism is a function of the average activity of the radioisotope used and the physiological dimensions of the patient only. It neglects the variation in energy of the emitted beta particle due to self-attenuation, or self-absorption, effects related to the finite size of the sphere. Here it is assumed the sphere is comprised of a pure radioisotope with beta particles being emitted isotropically throughout the material. The full initial possible kinetic energy distribution of a beta particle is taken into account as well as the energy losses due to scattering by other atoms in the microsphere and bremsstrahlung radiation. By combining Longmire’s theory of the mean forward range of charged particles and the Rayleigh distribution to take into account the statistical nature of scattering and energy straggling, the linear attenuation, or self-absorption, coefficient for beta-emitting radioisotopes has been deduced. By analogy with gamma radiation transport in spheres, this result was used to calculate the rate of energy emitted by a beta-emitting microsphere and its efficiency. Comparisons to standard point dose kernel formulations generated using Monte Carlo data show the efficacy of the proposed method. Yttrium-90 is used as a specific example throughout, as a medically significant radioisotope, frequently used in radiation therapy for treating cancer. - Highlights: • Range-energy relationship for the beta particles in yttrium-90 is calculated. • Formalism for the semi-analytical calculation of self-absorption coefficients. • Energy-dependent self-absorption coefficient calculated for yttrium-90. • Flux rate of beta particles from a self-attenuating radioactive sphere is shown. • The efficiency of beta particle emitting radioactive microspheres is calculated

Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

Directory of Open Access Journals (Sweden)

Mariya Aleksandrova

2015-12-01

Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

Radiation Characterization of Commercial GaN Devices

Science.gov (United States)

Harris, Richard D.; Scheick, Leif Z.; Hoffman, James P.; Thrivikraman, Tushar; Jenabi, Masud; Gim, Yonggyu; Miyahira, Tetsuo

2011-01-01

Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

Developing a training program for radiation protection officers in industrial radiography

International Nuclear Information System (INIS)

Kinda, R.

2013-04-01

Non-Destructive Testing employs a variety of techniques which are used to test objects e.g. pipes, vessels, welded joints, castings and other devices for imperfections without interfering with their physical structure. The common methods of testing include magnetic particle, ultrasound, dye penetrant and industrial radiography using gamma emitting radiation sources and electronic x-ray emitting devices. Other methods used are acoustic emission testing, acoustic resonance testing, electromagnetic testing, infrared testing and leak testing. This project work focuses on training of RPOs in the areas where radiation is used, as improper use may lead to high radiation exposure. In order to ensure adequate protection and safety of staff and the public, the Radiation Protection Officers need to be thoroughly trained. With proper training the Radiation Protection Officer will have the ability to interpret legislative instruments and understand the requirements. The RPO will also be able to develop a Radiation Protection Plan and train fellow staff on radiation safety issues. A number of companies currently specialize in Industrial Radiography and this number is growing on a yearly basis. Since the increased use of radiation sources cannot be curbed, training Radiation Protection Officers will improve the radiation safety standards within these companies and promote the safe use of the radiation sources. Therefore this project covers the fundamental elements required to train Radiation Protection Officers in Industrial Radiography. (author)

Standard light source utilizing spontaneous radiation

International Nuclear Information System (INIS)

Yamamoto, O.; Takenaga, M.; Tsujimoto, Y.

1975-01-01

A standard light source is described utilizing spontaneous radiation made by mixing a fluorescent substance LnVO 4 :X (wherein Ln is Y or Gd, and X is Dy or Eu) with a radioactive substance containing a radioactive isotope which is less in the degree of temperature variation of the intensity of emitted light and excellent in stability. Particularly when used in a light-receiving device having photomultiplier tubes, the said light source emits light quite similar to that of a thermoluminescent substance such as CaSO 4 :X (wherein X is Im, Dy, Sm or Mn), LiF or Mg 2 SiO 4 :Tb, and is excellent as a calibration high-stability standard light source for use in the above-mentioned light-receiving device. (auth)

[The role of BCP in electroluminescence of multilayer organic light-emitting devices].

Science.gov (United States)

Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

2009-03-01

As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

KAUST Repository

Hsiao, Yu Hsuan

2015-03-01

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques. © 1972-2012 IEEE.

EMERGENCY RADIATION SURVEY DEVICE ONBOARD THE UAV

Directory of Open Access Journals (Sweden)

S. Bogatov

2013-08-01

Full Text Available Radiation survey device (RSD on the base of unmanned aerial vehicle (UAV was developed as an equipment of rescue forces for radiation situation reconnaissance in case of emergency. RSD is multi range radiometer with spectrometer functions capable to work within gamma ray fields of dose rate 10–7 – 10–1 Sievert per hour. UAV md4-1000 (Microdrones GmbH, Germany was selected as the RSD carrier as a reliable vehicle with appropriate properties. Short description of RSD, UAV and developed software features as well as sensitivity assessments for different radiation sources are presented.

Recent developments in white light emitting diodes

Science.gov (United States)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

Practical silicon Light emitting devices fabricated by standard IC technology

International Nuclear Information System (INIS)

Aharoni, H.; Monuko du Plessis; Snyman, L.W.

2004-01-01

Full Text:Research activities are described with regard to the development of a comprehensive approach for the practical realization of single crystal Silicon Light Emitting Devices (Si-LEDs). Several interesting suggestions for the fabrication of such devices were made in the literature but they were not adopted by the semiconductor industry because they involve non-standard fabrication schemes, requiring special production lines. Our work presents an alternative approach, proposed and realized in practice by us, permitting the fabrication of Si-LEDs using the standard conventional fully industrialized IC technology ''as is'' without any adaptation. It enables their fabrication in the same production lines of the presently existing IC industry. This means that Si-LEDs can now be fabricated simultaneously with other components, such as transistors, on the same silicon chip, using the same masks and processing procedures. The result is that the yield, reliability, and price of the above Si-LEDs are the same as the other Si devices integrated on the same chip. In this work some structural details of several practical Si-LED's designed by us, as well as experimental results describing their performance are presented. These Si-LED's were fabricated to our specifications utilizing standard CMOS/BiCMOS technology, a fact which comprises an achievement by itself. The structure of the Si-LED's, is designed according to specifications such as the required operating voltage, overall light output intensity, its dependence(linear, or non-linear) on the input signal (voltage or current), light generations location (bulk, or near-surface), the emission pattern and uniformity. Such structural design present a problem since the designer can not use any structural parameters (such as doping levels and junction depths for example) but only those which already exist in the production lines. Since the fabrication procedures in these lines are originally designed for processing of

Advances in phosphors based on organic materials for light emitting devices

International Nuclear Information System (INIS)

Sharma, Kashma; Kumar, Vijay; Kumar, Vinod; Swart, Hendrik C.

2016-01-01

A brief overview is presented in the light emitting diodes (LEDs) based on purely organic materials. Organic LEDs are of great interest to the research community because of their outstanding properties and flexibility. Comparison between devices made using different organic materials and their derivatives with respect to synthetic protocols, characterizations, quantum efficiencies, sensitivity, specificity and their applications in various fields have been discussed. This review also discusses the essential requirement and scientific issues that arise in synthesizing cost-effective and environmental friendly organic LEDs diodes based on purely organic materials. This mini review aims to capture and convey some of the key current developments in phosphors formed by purely organic materials and highlights some possible future applications. Hence, this study comes up with a widespread discussion on the various contents in a single platform. Also, it offers avenues for new researchers for futuristic development in the area.

Hybrid light emitting transistors (Presentation Recording)

Science.gov (United States)

Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

2015-10-01

Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

Science.gov (United States)

Gan, Ruting; Guo, Zhenning; Lin, Jieben

2015-09-01

To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

Science.gov (United States)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Improved performances of red organic light-emitting devices by co-doping a rubrene derivative and DCJTB into tris-(8-hydroxyquinoline) aluminum host

Energy Technology Data Exchange (ETDEWEB)

Li Tianle [Physics Department, School of Science, Maoming University, Maoming 525000 (China); Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Wenlian, E-mail: wllioel@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Xiao [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Chu Bei, E-mail: beichubox@hotmail.co [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Su Zisheng; Han Liangliang; Chen Yiren [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Hu Zhizhi; Zhang Zhiqiang [Optic Photo-Electronic Materials and Research Development Center, Liaoning University of Science and Technology, Anshan 114044 (China)

2010-10-15

Performances of red organic light-emitting device were improved by co-doping 2-formyl-5,6,11,12-tetraphenylnaphthacene (2FRb) and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljulolidyl-9-enyl) -4H-pyran (DCJTB) in tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) host as the emitting layer. The device with 1 wt% DCJTB and 2.4 w% 2FRb in Alq{sub 3} host gave a saturated red emission with CIE chromaticity coordinates of (0.65, 0.35) and a maximum current efficiency as high as 6.45 cd/A, which are 2 and 2.4 fold larger than that of the device with 1 wt% DCJTB (3.28 cd/A) in Alq{sub 3} host and the device with 2.4 wt% 2FRb (2.72 cd/A) in Alq{sub 3} host at the current density of 20 mA/cm{sup 2}, respectively. The improvement could be attributed to the effective utilization of host energy by both energy transfer and trapping in the electroluminescence process and the depression of concentration quenching between the dopants molecules.

An analysis of radiation effects on electronics and soi-mos devices as an alternative

International Nuclear Information System (INIS)

Ikraiam, F. A.

2013-01-01

The effects of radiation on semiconductors and electronic components are analyzed. The performance of such circuitry depends upon the reliability of electronic devices where electronic components will be unavoidably exposed to radiation. This exposure can be detrimental or even fatal to the expected function of the devices. Single event effects (SEE), in particular, which lead to sudden device or system failure and total dose effects can reduce the lifetime of electronic devices in such systems are discussed. Silicon-on-insulator (SOI) technology is introduced as an alternative for radiation-hardened devices. I-V Characteristics Curves for SOI-MOS devices subjected to a different total radiation doses are illustrated. In addition, properties of some semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, and AlGaN/GaN are compared with those of SOI devices. The recognition of the potential usefulness of SOI-MOS semiconductor materials for harsh environments is discussed. A summary of radiation effects, impacts and mitigation techniques is also presented. (authors)

Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

International Nuclear Information System (INIS)

Cheng, J.-A.; Chen, Chin H.; Shieh, H.-P.D.

2009-01-01

This paper discusses a new type of supramolecular material tris{5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato} aluminum(III), Al(SCarq) 3 , which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R a ) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq) 3 (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m -2 . Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE x,y (0.40, 0.47)

Bacterial cellulose membrane as flexible substrate for organic light emitting devices

International Nuclear Information System (INIS)

Legnani, C.; Vilani, C.; Calil, V.L.; Barud, H.S.; Quirino, W.G.; Achete, C.A.; Ribeiro, S.J.L.; Cremona, M.

2008-01-01

Bacterial cellulose (BC) membranes produced by gram-negative, acetic acid bacteria (Gluconacetobacter xylinus), were used as flexible substrates for the fabrication of Organic Light Emitting Diodes (OLED). In order to achieve the necessary conductive properties indium tin oxide (ITO) thin films were deposited onto the membrane at room temperature using radio frequency (r.f.) magnetron sputtering with an r.f. power of 30 W, at pressure of 8 mPa in Ar atmosphere without any subsequent thermal treatment. Visible light transmittance of about 40% was observed. Resistivity, mobility and carrier concentration of deposited ITO films were 4.90 x 10 -4 Ohm cm, 8.08 cm 2 /V-s and - 1.5 x 10 21 cm -3 , respectively, comparable with commercial ITO substrates. In order to demonstrate the feasibility of devices based on BC membranes three OLEDs with different substrates were produced: a reference one with commercial ITO on glass, a second one with a SiO 2 thin film interlayer between the BC membrane and the ITO layer and a third one just with ITO deposited directly on the BC membrane. The observed OLED luminance ratio was: 1; 0.5; 0.25 respectively, with 2400 cd/m 2 as the value for the reference OLED. These preliminary results show clearly that the functionalized biopolymer, biodegradable, biocompatible bacterial cellulose membranes can be successfully used as substrate in flexible organic optoelectronic devices

ROSY - Rossendorf synchrotron radiation source

International Nuclear Information System (INIS)

Einfeld, D.; Matz, W.

1993-11-01

The electron energy of the storage ring will be 3 GeV and the emitted synchrotron radiation is in the hard X-ray region with a critical energy of the spectrum of E c =8,4 keV (λ c =0,14 nm). With a natural emittance of 28 π nm rad ROSY emits high brilliance radiation. Besides the radiation from bending magnets there will be the possibility for using radiation from wigglers and undulators. For the insertion devices 8 places are foreseen four of which are located in non-dispersion-free regions. The storage ring is of fourfold symmetry, has a circumference of 148 m and is designed in a modified FODO structure. An upgrade of ROSY with superconducting bending magnets in order to shift the spectrum to higher energy can easily be done. Part I contains the scientific case and a description of the planned use of the beam lines. Part II describes the design of the storage ring and its components in more detail. (orig.) [de

Proton Irradiation Effects in Oxide-Confined Vertical Cavity Surface Emitting Laser (VCSEL) Diodes

International Nuclear Information System (INIS)

Armendariz, M.G.; Barnes, C.E.; Choquette, K.D.; Guertin, S.; Hash, G.L.; Schwank, J.R.; Swift, G.M.

1999-01-01

Recent space experience has shown that the use of commercial optocouplers can be problematic in spacecraft, such as TOPEX/Poseidon, that must operate in significant radiation environments. Radiation--induced failures of these devices have been observed in space and have been further documented at similar radiation doses in the laboratory. The ubiquitous use of optocouplers in spacecraft systems for a variety of applications, such as electrical isolation, switching and power transfer, is indicative of the need for optocouplers that can withstand the space radiation environment. In addition, the distributed nature of their use implies that it is not particularly desirable to shield optocouplers for use in radiation environments. Thus, it will be important for the space community to have access to radiation hardened/tolerant optocouplers. For many microelectronic and photonic devices, it is difficult to achieve radiation hardness without sacrificing performance. However, in the case of optocouplers, one should be able to achieve both superior radiation hardness and performance for such characteristics as switching speed, current transfer ratio (CTR), minimum power usage and array power transfer, if standard light emitting diodes (LEDs), such as those in the commercial optocouplers mentioned above, are avoided, and VCSELs are employed as the emitter portion of the optocoupler. The physical configuration of VCSELs allows one to achieve parallel use of an array of devices and construct a multichannel optocoupler in the standard fashion with the emitters and detectors looking at each other. In addition, detectors similar in structure to the VCSELs can be fabricated which allows bidirectional functionality of the optocoupler. Recent discussions suggest that VCSELs will enjoy widespread applications in the telecommunications and data transfer fields

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Electrically driven surface plasmon light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Development of computational pregnant female and fetus models and assessment of radiation dose from positron-emitting tracers

Energy Technology Data Exchange (ETDEWEB)

Xie, Tianwu [Geneva University Hospital, Division of Nuclear Medicine and Molecular Imaging, Geneva (Switzerland); Zaidi, Habib [Geneva University Hospital, Division of Nuclear Medicine and Molecular Imaging, Geneva (Switzerland); Geneva University, Geneva Neuroscience Center, Geneva (Switzerland); University of Groningen, University Medical Center Groningen, Department of Nuclear Medicine and Molecular Imaging, Groningen (Netherlands); University of Southern Denmark, Department of Nuclear Medicine, Odense (Denmark)

2016-12-15

Molecular imaging using PET and hybrid (PET/CT and PET/MR) modalities nowadays plays a pivotal role in the clinical setting for diagnosis and staging, treatment response monitoring, and radiation therapy treatment planning of a wide range of oncologic malignancies. The developing embryo/fetus presents a high sensitivity to ionizing radiation. Therefore, estimation of the radiation dose delivered to the embryo/fetus and pregnant patients from PET examinations to assess potential radiation risks is highly praised. We constructed eight embryo/fetus models at various gestation periods with 25 identified tissues according to reference data recommended by the ICRP publication 89 representing the anatomy of the developing embryo/fetus. The developed embryo/fetus models were integrated into realistic anthropomorphic computational phantoms of the pregnant female and used for estimating, using Monte Carlo calculations, S-values of common positron-emitting radionuclides, organ absorbed dose, and effective dose of a number of positron-emitting labeled radiotracers. The absorbed dose is nonuniformly distributed in the fetus. The absorbed dose of the kidney and liver of the 8-week-old fetus are about 47.45 % and 44.76 % higher than the average absorbed dose of the fetal total body for all investigated radiotracers. For {sup 18}F-FDG, the fetal effective doses are 2.90E-02, 3.09E-02, 1.79E-02, 1.59E-02, 1.47E-02, 1.40E-02, 1.37E-02, and 1.27E-02 mSv/MBq at the 8th, 10th, 15th, 20th, 25th, 30th, 35th, and 38th weeks of gestation, respectively. The developed pregnant female/fetus models matching the ICRP reference data can be exploited by dedicated software packages for internal and external dose calculations. The generated S-values will be useful to produce new standardized dose estimates to pregnant patients and embryo/fetus from a variety of positron-emitting labeled radiotracers. (orig.)

Decontamination method and device for radiation contaminated product

International Nuclear Information System (INIS)

Morikawa, Kenji; Ohinata, Hiroshi; Omata, Kazuo; Sato, Toshihiko; Nakajima, Yoshihiko; Ichikawa, Seigo.

1996-01-01

In the present invention, radiation contaminated products generated during shot peening are decontaminated by a chelating agent, and the chelating agent is removed from the radiation contaminated products. Then the temperature of the radiation contaminated products is elevated by hot blowing at a temperature higher than a boiling point of the solvent. Then, a solvent is added to the radiation contaminated products and the solvent is evaporated abruptly. The solution of the chelating agent remained while being deposited thereto is removed by evaporation to remove it from the radiation contaminated products together with the solvent. With such procedures, all of the decontamination steps can be completed in one device without requiring a large space or not moving the radiation contaminated products on every step. (T.M.)

Radiation effects and soft errors in integrated circuits and electronic devices

CERN Document Server

Fleetwood, D M

2004-01-01

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes th

Hybrid white organic light-emitting devices consisting of a non-doped thermally activated delayed fluorescent emitter and an ultrathin phosphorescent emitter

International Nuclear Information System (INIS)

Zhao, Juan; Wang, Zijun; Wang, Run; Chi, Zhenguo; Yu, Junsheng

2017-01-01

Hybrid white organic light-emitting devices (OLEDs) are fabricated by employing non-doped emitting layers (EMLs), which are consisted of a blue thermally activated delayed fluorescent (TADF) emitter 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone (DMAC-DPS) and an ultrathin yellow iridium complex bis[2-(4-tertbutylphenyl)benzothiazolato-N,C 2′ ] iridium (acetylacetonate) [(tbt) 2 Ir(acac)]. With thickness optimization of DMAC-DPS, a white OLED achieves maximum current efficiency, power efficiency and external quantum efficiency of 34.9 cd/A, 29.2 lm/W and 11.4%, respectively, as well as warm white emission with relatively stable electroluminescence spectra. The results suggest that, bipolar charge carrier transport property and concentration independent property of DMAC-DPS, charge carrier trapping effect of the ultrathin (tbt) 2 Ir(acac), and balanced self-emission process and energy transfer process between DMAC-DPS and (tbt) 2 Ir(acac), contribute to high device performance.

Adjustable radiation protection device of the fluoroscope DG 10

International Nuclear Information System (INIS)

Hoermann, D.

1980-01-01

In cooperation with the 'VEB Transformatoren- und Roentgenwerk Hermann Matern', Dresden, an adjustable radiation protection device has been developed. This supplementary equipment for fluoroscopes ensures a sufficient protection of the gonads against undesirable X radiation, can be handled easily and does not annoy patients, esp. children

Coherence properties of blackbody radiation and application to energy harvesting and imaging with nanoscale rectennas

Science.gov (United States)

Lerner, Peter B.; Cutler, Paul H.; Miskovsky, Nicholas M.

2015-01-01

Modern technology allows the fabrication of antennas with a characteristic size comparable to the electromagnetic wavelength in the optical region. This has led to the development of new technologies using nanoscale rectifying antennas (rectennas) for solar energy conversion and sensing of terahertz, infrared, and visible radiation. For example, a rectenna array can collect incident radiation from an emitting source and the resulting conversion efficiency and operating characteristics of the device will depend on the spatial and temporal coherence properties of the absorbed radiation. For solar radiation, the intercepted radiation by a micro- or nanoscale array of devices has a relatively narrow spatial and angular distribution. Using the Van Cittert-Zernike theorem, we show that the coherence length (or radius) of solar radiation on an antenna array is, or can be, tens of times larger than the characteristic wavelength of the solar spectrum, i.e., the thermal wavelength, λT=2πℏc/(kBT), which for T=5000 K is about 3 μm. Such an effect is advantageous, making possible the rectification of solar radiation with nanoscale rectenna arrays, whose size is commensurate with the coherence length. Furthermore, we examine the blackbody radiation emitted from an array of antennas at temperature T, which can be quasicoherent and lead to a modified self-image, analogous to the Talbot-Lau self-imaging process but with thermal rather than monochromatic radiation. The self-emitted thermal radiation may be important as a nondestructive means for quality control of the array.

Micropole undulators: Novel insertion devices for synchrotron sources

International Nuclear Information System (INIS)

Toor, A.; Csonka, P.; Tatchyn, R.

1989-01-01

Micropole undulators (wigglers) are undulators (wigglers) with submillimeter periods and are referred to, generically, as micropole insertion devices. Compared to ordinary insertion devices, whose period λ u is typically ≥l cm, micropole devices have periods smaller by a factor f≤10. Therefore, the first-harmonic radiation emitted by a micropole undulator will have its photon energy E γ increased by f and its spectral purity Δλ/λ by f, provided the total length of the undulator l u stays unchanged, and magnetic field errors, as well as the electron-beam emittance, are sufficiently small. Furthermore, to generate photons of the same E γ as from the conventional device, the electron-beam energy E e can be reduced by f 1/2 , resulting in significantly lower construction and operating costs. Radiative energy losses can be correspondingly diminished for the associated storage rings. In this paper we report on results recently obtained by us in the practical implementation and design of micropole undulators at the Stanford Synchrotron Radiation Laboratory (SSRL) and the Lawrence Livermore National Laboratory (LLNL). Based on our work, micropole undulators with f≤10 4 appear feasible at the present time

Charge-coupled devices as positron sensitive detectors of x-radiation

International Nuclear Information System (INIS)

Volkov, G.S.; Zazhivikhin, V.V.; Zajtsev, V.I.; Mishevskij, V.O.

1996-01-01

Results of theoretical and experimental studies on the sensitivity and spatial resolution of devices with a charge link (CLD) within the X-radiation energy range are described. The areas of the device application are considered

Steady full colour white organic light-emitting devices consisting of an ultrathin red fluorescent layer

Energy Technology Data Exchange (ETDEWEB)

Wen Wen; Yu Junsheng; Li Lu; Wang Jun; Jiang Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn

2009-01-07

White organic light-emitting devices were fabricated using an ultrathin red fluorescent dye of 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl)cyclohexene inserted in tris(8-quinolinolato) aluminium layer as a red and green emitting layer (EML) and a thin 4, 4'-bis(2, 2'-diphenylvinyl)-1, 1'-diphenyl (DPVBi) layer as blue EML. A maximum power efficiency of 2.4 lm W{sup -1} at 5.5 V and a maximum luminance of 16 690 cd m{sup -2} at 18.5 V were obtained. Pure white emission with a good colour rendering index of 80 was achieved as low as 5 V. The Commission Internationale de l'Eclairage (CIE) coordinates near (0.330, 0.300) show a slight variation of (-0.020, +0.002) in a wide range of voltages. The achievement of full colour white emission at low-operation voltages and high-colour stability is attributed to the confining emission zone function of the thin EML and direct carrier trapping in the ultrathin layer.

Structured thermal surface for radiative camouflage.

Science.gov (United States)

Li, Ying; Bai, Xue; Yang, Tianzhi; Luo, Hailu; Qiu, Cheng-Wei

2018-01-18

Thermal camouflage has been successful in the conductive regime, where thermal metamaterials embedded in a conductive system can manipulate heat conduction inside the bulk. Most reported approaches are background-dependent and not applicable to radiative heat emitted from the surface of the system. A coating with engineered emissivity is one option for radiative camouflage, but only when the background has uniform temperature. Here, we propose a strategy for radiative camouflage of external objects on a given background using a structured thermal surface. The device is non-invasive and restores arbitrary background temperature distributions on its top. For many practical candidates of the background material with similar emissivity as the device, the object can thereby be radiatively concealed without a priori knowledge of the host conductivity and temperature. We expect this strategy to meet the demands of anti-detection and thermal radiation manipulation in complex unknown environments and to inspire developments in phononic and photonic thermotronics.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

Directory of Open Access Journals (Sweden)

Zahra Bisadi

2018-02-01

Full Text Available A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Review of radiation effects on ReRAM devices and technology

Science.gov (United States)

Gonzalez-Velo, Yago; Barnaby, Hugh J.; Kozicki, Michael N.

2017-08-01

A review of the ionizing radiation effects on resistive random access memory (ReRAM) technology and devices is presented in this article. The review focuses on vertical devices exhibiting bipolar resistance switching, devices that have already exhibited interesting properties and characteristics for memory applications and, in particular, for non-volatile memory applications. Non-volatile memories are important devices for any type of electronic and embedded system, as they are for space applications. In such applications, specific environmental issues related to the existence of cosmic rays and Van Allen radiation belts around the Earth contribute to specific failure mechanisms related to the energy deposition induced by such ionizing radiation. Such effects are important in non-volatile memory as the current leading technology, i.e. flash-based technology, is sensitive to the total ionizing dose (TID) and single-event effects. New technologies such as ReRAM, if competing with or complementing the existing non-volatile area of memories from the point of view of performance, also have to exhibit great reliability for use in radiation environments such as space. This has driven research on the radiation effects of such ReRAM technology, on both the conductive-bridge RAM as well as the valence-change memories, or OxRAM variants of the technology. Initial characterizations of ReRAM technology showed a high degree of resilience to TID, developing researchers’ interest in characterizing such resilience as well as investigating the cause of such behavior. The state of the art of such research is reviewed in this article.

Automatic device for measuring β-emitting sources: P.A.P.A. β-meters

International Nuclear Information System (INIS)

Colomer, J.; Valentin, M.

1969-01-01

The apparatus described is designed for measuring β-emitting elements by the absorption method; it is suitable for carrying out a large number of routine analyses. A mechanical device pushes an aluminium absorption set automatically between the source and the detector; the movement is programmed for cutting on and off by a transistorized electronic unit, with printing out and punching of the results on tape; then this can be mathematically processed by a computer (tracing of absorption spectra, extrapolation and calculation of the activity). The detector is either a β-probe or a proportional counter with a specially designed loop. For routine measurements, the accuracy obtained, with all corrections made, is from 5 to 8 per cent; the reproducibility is about 2 per cent. (authors) [fr

On the radiation emitted by a particle falling into a black hole in the semi-relativistic approximation

International Nuclear Information System (INIS)

Coretti, C.; Ferrari, V.

1986-01-01

In this paper the limits of applicability of the semi-relativistic approximation for estimating the radiation emitted in processes of capture of particles by black holes are discussed. It is shown that it gives reliable estimates in the case of spherically symmetric black holes, but it fails in the case of rotating black holes

Radiation as a microbiological contamination control of drugs, cosmetics and medical devices

International Nuclear Information System (INIS)

Ishizeki, Chuichi

1985-01-01

This paper deals with current status of radiation sterilization or disinfection of drugs, cosmetics, their materials, and medical devices, and with quality control as a tool for securing microbiological safety, especially current status of sterilization tests. Ointment containing tetracyclin, steroid hormones, gelatin, and enzymes are presented as drug samples to be irradiated, and explanations for radiation sterilization of these drugs are provided. An outline of the application of radiation in cosmetics and medical devices is given. Issues are also provided from the viewpoint of safey and effectiveness of radiation sterilization. (Namekawa, K.)

A review on organic spintronic materials and devices: II. Magnetoresistance in organic spin valves and spin organic light emitting diodes

Directory of Open Access Journals (Sweden)

Rugang Geng

2016-09-01

Full Text Available In the preceding review paper, Paper I [Journal of Science: Advanced Materials and Devices 1 (2016 128–140], we showed the major experimental and theoretical studies on the first organic spintronic subject, namely organic magnetoresistance (OMAR in organic light emitting diodes (OLEDs. The topic has recently been of renewed interest as a result of a demonstration of the magneto-conductance (MC that exceeds 1000% at room temperature using a certain type of organic compounds and device operating condition. In this report, we will review two additional organic spintronic devices, namely organic spin valves (OSVs where only spin polarized holes exist to cause magnetoresistance (MR, and spin organic light emitting diodes (spin-OLEDs where both spin polarized holes and electrons are injected into the organic emissive layer to form a magneto-electroluminescence (MEL hysteretic loop. First, we outline the major advances in OSV studies for understanding the underlying physics of the spin transport mechanism in organic semiconductors (OSCs and the spin injection/detection at the organic/ferromagnet interface (spinterface. We also highlight some of outstanding challenges in this promising research field. Second, the first successful demonstration of spin-OLEDs is reviewed. We also discuss challenges to achieve the high performance devices. Finally, we suggest an outlook on the future of organic spintronics by using organic single crystals and aligned polymers for the spin transport layer, and a self-assembled monolayer to achieve more controllability for the spinterface.

Radiation effects in LDD MOS devices

International Nuclear Information System (INIS)

Woodruff, R.L.; Adams, J.R.

1987-01-01

The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays with Co-60 gamma rays. The authors find that for the gate oxides and transistor structures investigated in this work, 10 keV x-rays produce more fixed-charge guild-up in the gate oxide, and more interface charge than do Co-60 gamma rays. They determined that the radiation response of LDD transistors is similar to that of conventional (non-LDD) transistors. In addition, both standard and radiation-hardened transistors subjected to hot carrier stress before irradiation show a similar radiation response. After exposure to 1.0 x 10 6 rads(Si), non-hardened transistors show increased susceptibility to hot-carrier graduation, while the radiation-hardened transistors exhibit similar hot-carrier degradation to non-irradiated devices. The authors have demonstrated a fully-integrated radiation hardened process tht is solid to 1.0 x 10 6 rads(Si), and shows promise for achieving 1.0 x 10 7 rad(Si) total-dose capability

Hybrid white organic light-emitting devices consisting of a non-doped thermally activated delayed fluorescent emitter and an ultrathin phosphorescent emitter

Energy Technology Data Exchange (ETDEWEB)

Zhao, Juan [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Wang, Zijun; Wang, Run [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Chi, Zhenguo, E-mail: chizhg@mail.sysu.edu.cn [School of Chemistry, Sun Yat-sen University, Guangzhou 510275 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2017-04-15

Hybrid white organic light-emitting devices (OLEDs) are fabricated by employing non-doped emitting layers (EMLs), which are consisted of a blue thermally activated delayed fluorescent (TADF) emitter 9,9-dimethyl-9,10-dihydroacridine-diphenylsulfone (DMAC-DPS) and an ultrathin yellow iridium complex bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2′}] iridium (acetylacetonate) [(tbt){sub 2}Ir(acac)]. With thickness optimization of DMAC-DPS, a white OLED achieves maximum current efficiency, power efficiency and external quantum efficiency of 34.9 cd/A, 29.2 lm/W and 11.4%, respectively, as well as warm white emission with relatively stable electroluminescence spectra. The results suggest that, bipolar charge carrier transport property and concentration independent property of DMAC-DPS, charge carrier trapping effect of the ultrathin (tbt){sub 2}Ir(acac), and balanced self-emission process and energy transfer process between DMAC-DPS and (tbt){sub 2}Ir(acac), contribute to high device performance.

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

Science.gov (United States)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

Science.gov (United States)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Device for converting electromagnetic radiation energy into electrical energy and method of manufacturing such a device

NARCIS (Netherlands)

2007-01-01

Device (10) for converting electromagnetic radiation energy into electrical energy, comprising at least a photovoltaic element (11) with a radiation-sensitive surface, wherein a covering layer (12) of a material comprising a silicon compound, to which a rare earth element has been added, is present

Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

Energy Technology Data Exchange (ETDEWEB)

Cheng, J.-A. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)], E-mail: jacheng.ac89g@nctu.edu.tw; Chen, Chin H. [Microelectronics and Information System Research Center, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Shieh, H.-P.D. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2009-02-15

This paper discusses a new type of supramolecular material tris{l_brace}5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato{r_brace} aluminum(III), Al(SCarq){sub 3}, which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R{sub a}) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq){sub 3} (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m{sup -2}. Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE{sub x,y} (0.40, 0.47)

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

Science.gov (United States)

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)

2015-06-07

Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.

Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

Science.gov (United States)

Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

2017-11-01

Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

Radioactivity concentration measuring device for radiation waste containing vessel

International Nuclear Information System (INIS)

Goto, Tetsuo.

1994-01-01

The device of the present invention can precisely and accurately measure a radioactive concentration of radioactive wastes irrespective of the radioactivity concentration distribution. Namely, a Ge detector having a collimator and a plurality of radiation detectors are placed at the outside of the radioactive waste containing vessel in such a way that it can rotate and move vertically relative to the vessel. The plurality of radiation detectors detect radiation coefficient signals at an assumed segment unit of a predetermined length in vertical direction and for every predetermined angle unit in the rotational direction. A weight measuring device determines the weight of the vessel. A computer calculates an average density of radioactivity for the region filled with radioactivity based on the determined net weight and radiation coefficient signals assuming that the volume of the radioactivity is constant. In addition, the computer calculates the amount of radioactivity in the assumed segment by conducting γ -ray absorption compensation calculation for the material in the vessel. Each of the amount of radioactivity is integrated to determine the amount of radioactivity in the vessel. (I.S.)

Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

Science.gov (United States)

Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

2018-05-01

Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

Improvement of ITO properties in green-light-emitting devices by using N2:O2 plasma treatment

Science.gov (United States)

Jeon, Hyeonseong; Kang, Seongjong; Oh, Hwansool

2016-01-01

Plasma treatment reduces the roughness of the indium-tin-oxide (ITO) interface in organic light emitting diodes (OLEDs). Oxygen gas is typically used in the plasma treatment of conventional OLED devices. However, in this study, nitrogen and oxygen gases were used for surface treatment to improve the properties of ITO. To investigate the improvements resulting from the use of nitrogen and oxygen plasma treatment, fabricated green OLED devices. The device's structure was ITO (600 Å) / α-NPD (500 Å) / Alq3:NKX1595 (400 Å:20 Å,5%) / LiF / Al:Li (10 Å:1000 Å). The plasma treatment was performed in a capacitive coupled plasma (CCP) type plasma treatment chamber similar to that used in the traditional oxygen plasma treatment. The results of this study show that the combined nitrogen/oxygen plasma treatment increases the lifetime, current density, and brightness of the fabricated OLED while decreasing the operating voltage relative to those of OLEDs fabricated using oxygen plasma treatment.

The radiation protective devices for interventional procedures using computed tomography

International Nuclear Information System (INIS)

Iida, Hiroji; Chabatake, Mitsuhiro; Shimizu, Mitsuru; Tamura, Sakio

2002-01-01

A scattered dose and a surface dose from phantom measurements during interventional procedures with computed tomography (IVR-CT) were evaluated. To reduce the personnel exposure in IVR-CT, the new protective devices were developed and its effect evaluated. Two radiation protection devices were experimentally made using a lead vinyl sheet with lead equivalent 0.125 mmPb. The first device is a lead curtain which shields the space of CT-gantry and phantom for the CT examination. The second device is a lead drape which shields on the phantom surface adjacent to the scanning plane for the CT-fluoroscopy. Scattered dose and phantom surface dose were measured with an abdominal phantom during Cine-CT (130 kV, 150 mA, 5 seconds, 10 mm section thickness). They were measured by using ionization chamber dosimeter. They were measured with and without a lead curtain and a lead drape. Scattered dose rate was measured at distance of 50-150 cm from the scanning plane. And, surface dose was measured at distance of 4-21 cm from the scanning plane on the phantom. On operator's standing position, scattered dose rates were from 8.4 to 11.6 μGy/sec at CT examination. The lead curtain and the lead drape reduced scattered dose rate at distance of 50 cm from the scanning plane by 66% and 58.3% respectively. Surface dose rate were 118 μGy/sec at distance of 5 cm from the scanning plane at CT-fluoroscopy. The lead drape reduced the surface dose by 60.5%. High scattered exposure to personnel may occur during interventional procedures using CT. They were considerably reduced during CT-arteriography by attaching the lead curtain in CT equipment. And they were substantially reduced during CT-fluoroscopy by placing the lead drape adjacent to the scanning plane, in addition, operator's hand would be protected from unnecessary radiation scattered by phantom. It was suggested that the scattered exposure to personnel could be sufficiently reduced by using radiation protection devices in IVR-CT. The

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

Science.gov (United States)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

Finite volume method for radiative heat transfer in an unstructured flow solver for emitting, absorbing and scattering media

International Nuclear Information System (INIS)

Gazdallah, Moncef; Feldheim, Véronique; Claramunt, Kilian; Hirsch, Charles

2012-01-01

This paper presents the implementation of the finite volume method to solve the radiative transfer equation in a commercial code. The particularity of this work is that the method applied on unstructured hexahedral meshes does not need a pre-processing step establishing a particular marching order to visit all the control volumes. The solver simply visits the faces of the control volumes as numbered in the hexahedral unstructured mesh. A cell centred mesh and a spatial differencing step scheme to relate facial radiative intensities to nodal intensities is used. The developed computer code based on FVM has been integrated in the CFD solver FINE/Open from NUMECA Int. Radiative heat transfer can be evaluated within systems containing uniform, grey, emitting, absorbing and/or isotropically or linear anisotropically scattering medium bounded by diffuse grey walls. This code has been validated for three test cases. The first one is a three dimensional rectangular enclosure filled with emitting, absorbing and anisotropically scattering media. The second is the differentially heated cubic cavity. The third one is the L-shaped enclosure. For these three test cases a good agreement has been observed when temperature and heat fluxes predictions are compared with references taken, from literature.

Fast infrared detectors for beam diagnostics with synchrotron radiation

International Nuclear Information System (INIS)

Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

2007-01-01

Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

Organic light-emitting diodes based on 9-(2-naphthyl)anthracene derivatives with a triphenylsilane unit as the deep-blue emitting layer

Energy Technology Data Exchange (ETDEWEB)

Song, Ji Young; Lee, Seul Bee [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Lee, Seok Jae [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@wow.hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-02-27

A series of 9-(2-naphthyl)anthracene derivatives with a triphenylsilane unit, which prevented molecular aggregation and self-quenching effect, was designed and synthesized. By using various bridges between the 9-(2-naphthyl)anthracene group and the triphenylsilane unit, five deep-blue emitters were obtained and applied as non-doped emitting materials in organic light-emitting diodes (OLEDs) with a device structure of indium–tin-oxide (ITO) (180 nm)/4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl (NPB) (50 nm)/emitting materials (30 nm)/4,7-diphenyl-1,10-phenanthroline (Bphen) (30 nm)/lithium quinolate (Liq) (2 nm)/Aluminium (100 nm). All devices showed blue emissions and their electroluminescence efficiencies are sensitive to the structural changes of the emitting materials. In particular, a device using 9-(2-naphthalenyl)-10-[6-(triphenylsilyl)-2-naphthalenyl]-anthracene (4) exhibited high luminous, power and quantum efficiencies of 2.28 cd/A, 1.42 lm/W and 2.40% at 20 mA/cm{sup 2}, respectively, and this device showed the deep blue emission with the CIE coordinates of (0.16, 0.10) at 6.0 V. - Highlights: • We synthesized 9-(2-naphthyl)anthracene derivatives with a triphenylsilane unit. • We study the conjugation-length effect on the electroluminescence properties. • The bulky triphenylsilane-anthracene derivatives show resistance to self-aggregation.

The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

International Nuclear Information System (INIS)

Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

2007-01-01

Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

Red polymer light-emitting devices based on an oxadiazole-functionalized europium(III) complex

International Nuclear Information System (INIS)

Liu, Yu; Wang, Yafei; Li, Chun; Huang, Ying; Dang, Dongfeng; Zhu, Meixiang; Zhu, Weiguo; Cao, Yong

2014-01-01

A novel tris(dibenzoylmethanato)[5-(2-(4-tert-butylbenzenyl)-5-benzenyl-1,3, 4-oxadiazole-4′)-1,10-phenanthroline]europium(III) [Eu(DBM) 3 (BuOXD-Phen)] containing an electron-transporting oxadiazole-functionalized phenanthroline ligand was synthesized and characterized. Its UV–vis absorption and photoluminescence (PL), as well as the electroluminescence (EL) in polymer light-emitting devices (PLEDs) were investigated. The double-layer PLEDs with a configuration of ITO/PEDOT:PSS (50 nm)/PVK (40 nm)/PFO:PBD (30%):Eu(DBM) 3 (BuOXD-Phen) (1–8 wt %) (80 nm)/Ba (4 nm)/Al (150 nm) were fabricated. Saturated red Eu 3+ ion emission, based on the 5 D 0 → 7 F 2 transition, is centered at a wavelength of 614 nm with a full width at half maximum (FWHM) of 10 nm. The highest external quantum efficiency (QE ext ) of 1.26% at current density of 1.65 mA cm −2 , with a maximum brightness of 568 cd m −2 at 137.8 mA cm −2 was achieved from the device at 1 wt % dopant concentration. - Highlights: • An oxadiazole-functionalized europium(III) complex of Eu(DBM) 3 (BuOXD-Phen) was presented. • The optophysical properties of Eu(DBM) 3 (BuOXD-Phen) were investigated. • Saturated red emission was observed in the PLEDs. • An external quantum efficiency of 1.26% was obtained in these devices

European Code against Cancer 4th edition: Ultraviolet radiation and cancer

NARCIS (Netherlands)

R. Greinert (Rüdiger); E. de Vries (Esther); F. Erdmann (Friederike); C. Espina (Carolina); A. Auvinen (Anssi); A. Kesminiene (Ausrele); J. Schüz (Joachim)

2015-01-01

textabstractUltraviolet radiation (UVR) is part of the electromagnetic spectrum emitted naturally from the sun or from artificial sources such as tanning devices. Acute skin reactions induced by UVR exposure are erythema (skin reddening), or sunburn, and the acquisition of a suntan triggered by

Photon extraction from nitride ultraviolet light-emitting devices

Science.gov (United States)

Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

2015-02-24

In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

International Nuclear Information System (INIS)

Gayduchenko, I.; Kardakova, A.; Voronov, B.; Finkel, M.; Fedorov, G.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.

2015-01-01

Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

Science.gov (United States)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Volatiles emitted from flowers by gamma-radiated and nonradiated Jasminum polyanthum Franch. in situ

International Nuclear Information System (INIS)

Christensen, L.P.; Jakobsen, H.B.; Kristiansen, K.; Moller, J.

1997-01-01

Volatile compounds emitted from flowers of Jasminum polyanthum Pepita in situ were collected by dynamic headspace technique and analyzed by GC-FID and GC-MS. A total of 32 compounds were identified. The flower scent was dominated by benzyl acetate (57.8%), p-cresol (12.2%), (E)-isoeugenol (9.7%), eugenol (3.5%), 2-methoxy-p-cresol (3.1%), linalool (3.0%), phenethyl acetate (2.1%), and (Z)3-hexenyl butyrate (1.9%). The strong scent of Pepita reduces its production potentialities as a pot plant, thus the possibility to reduce or modify the emission of volatiles from Pepita by mutagenesis was investigated. The average total yields of volatiles in Pepita were approximately 2800 ng flower-1 h-1, and in one gamma-radiated clone a significantly lower yield of 1050 ng flower-1 h-1 was found. The volatile profiles of the gamma-radiated plants were made up of the same 32 compounds found in Pepita. Significant differences in the headspace composition between Pepita and gamma-radiated plants were found for some of the major volatiles

Study of radiation effects on semiconductor devices

International Nuclear Information System (INIS)

Kuboyama, Satoshi; Shindou, Hiroyuki; Ikeda, Naomi; Iwata, Yoshiyuki; Murakami, Takeshi

2004-01-01

Fine structure of the recent semiconductor devices has made them more sensitive to the space radiation environment with trapped high-energy protons and heavy ions. A new failure mode caused by bulk damage had been reported on such devices with small structure, and its effect on commercial synchronous dynamic random access memory (SDRAMs) was analyzed from the irradiation test results performed at Heavy ion Medical Accelerator in Chiba (HIMAC). Single event upset (SEU) data of static random access memory (SRAMs) were also collected to establish the method of estimating the proton-induced SEU rate from the results of heavy ion irradiation tests. (authors)

Radiation hazards in the nuclear medicine

International Nuclear Information System (INIS)

Roo, M.J.K. de

1981-01-01

After a survey of the actual situation of nuclear medicine in Belgium, the evolution of nuclear medicine is studied with regard to quantitative aspects (tracerquantities, number of radioisotopic explorations, number of certified doctors) and qualitative aspects (use of short living isotopes emitting low energy radiation, introduction of in vitro tests). Taking these data into consideration, the exposure of nuclear medicine staff by external or internal radiation is evaluated. From this study it appears that the radiation exposure of the personnel of nuclear medicine departments remains low if proper manipulation methods and simple protective devices are used and if there is an efficient collaboration with an active health physics department or radiation control organism. (author)

Electrical Stress Influences the Efficiency of CH3 NH3 PbI3 Perovskite Light Emitting Devices.

Science.gov (United States)

Zhao, Lianfeng; Gao, Jia; Lin, YunHui L; Yeh, Yao-Wen; Lee, Kyung Min; Yao, Nan; Loo, Yueh-Lin; Rand, Barry P

2017-06-01

Organic-inorganic hybrid perovskite materials are emerging as semiconductors with potential application in optoelectronic devices. In particular, perovskites are very promising for light-emitting devices (LEDs) due to their high color purity, low nonradiative recombination rates, and tunable bandgap. Here, using pure CH 3 NH 3 PbI 3 perovskite LEDs with an external quantum efficiency (EQE) of 5.9% as a platform, it is shown that electrical stress can influence device performance significantly, increasing the EQE from an initial 5.9% to as high as 7.4%. Consistent with the enhanced device performance, both the steady-state photoluminescence (PL) intensity and the time-resolved PL decay lifetime increase after electrical stress, indicating a reduction in nonradiative recombination in the perovskite film. By investigating the temperature-dependent characteristics of the perovskite LEDs and the cross-sectional elemental depth profile, it is proposed that trap reduction and resulting device-performance enhancement is due to local ionic motion of excess ions, likely excess mobile iodide, in the perovskite film that fills vacancies and reduces interstitial defects. On the other hand, it is found that overstressed LEDs show irreversibly degraded device performance, possibly because ions initially on the perovskite lattice are displaced during extended electrical stress and create defects such as vacancies. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly flexible peeled-off silver nanowire transparent anode using in organic light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Duan, Ya-Hui; Duan, Yu, E-mail: duanyu@jlu.edu.cn; Wang, Xiao; Yang, Dan; Yang, Yong-Qiang; Chen, Ping; Sun, Feng-Bo; Xue, Kai-Wen; Zhao, Yi

2015-10-01

Graphical abstract: - Highlights: • An ultra-smooth AgNW film on a flexible photopolymer substrate has been fabricated. • The AgNW film has a low sheet resistance with high transparency and flexibility. • OLEDs based on AgNW:NOA63 substrate can be bent at a radius of curvature of 2 mm. - Abstract: Materials to replace indium tin oxide (ITO) for high transmittance and electrical conductivity are urgently needed. In this paper, we adopted a silver nanowire (AgNW)-photopolymer (NOA63) film as a new platform for flexible optoelectronic devices. This design combined a transparent electrode and a flexible substrate. We utilized this application to obtain flexible organic light-emitting devices (FOLEDs). A peel-off process combined with a spin-coating process created an ultra-smooth silver nanowire anode on a photopolymer substrate. The performance of the device was achieved via the perfect morphology of the AgNW anode, the optimal 5 mg/ml concentration of AgNW solution, and the 45.7 Ω/□ sheet resistance of the AgNW film. The maximum current efficiency of the FOLED is 13 cd/A with stable mechanical flexibility even when bent to a radius of curvature of 2 mm. The outstanding performance of the FOLED with peeled off AgNW anode shows that this approach is a promising alternative to ITO for FOLEDs.

Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

Science.gov (United States)

Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

2015-11-25

A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

New Materials and Device Designs for Organic Light-Emitting Diodes

Science.gov (United States)

O'Brien, Barry Patrick

Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red

Numerically stable algorithm for discrete-ordinate-method radiative transfer in multiple scattering and emitting layered media

Science.gov (United States)

Stamnes, Knut; Tsay, S.-CHEE; Jayaweera, Kolf; Wiscombe, Warren

1988-01-01

The transfer of monochromatic radiation in a scattering, absorbing, and emitting plane-parallel medium with a specified bidirectional reflectivity at the lower boundary is considered. The equations and boundary conditions are summarized. The numerical implementation of the theory is discussed with attention given to the reliable and efficient computation of eigenvalues and eigenvectors. Ways of avoiding fatal overflows and ill-conditioning in the matrix inversion needed to determine the integration constants are also presented.

Microwave ablation devices for interventional oncology.

Science.gov (United States)

Ward, Robert C; Healey, Terrance T; Dupuy, Damian E

2013-03-01

Microwave ablation is one of the several options in the ablation armamentarium for the treatment of malignancy, offering several potential benefits when compared with other ablation, radiation, surgical and medical treatment modalities. The basic microwave system consists of the generator, power distribution system and antennas. Often under image (computed tomography or ultrasound) guidance, a needle-like antenna is inserted percutaneously into the tumor, where local microwave electromagnetic radiation is emitted from the probe's active tip, producing frictional tissue heating, capable of causing cell death by coagulation necrosis. Half of the microwave ablation systems use a 915 MHz generator and the other half use a 2450 MHz generator. To date, there are no completed clinical trials comparing microwave devices head-to-head. Prospective comparisons of microwave technology with other treatment alternatives, as well as head-to-head comparison with each microwave device, is needed if this promising field will garner more widespread support and use in the oncology community.

Radiation from ingested wireless devices in bio-medical telemetry bands

OpenAIRE

Chirwa, L.C.; Roy, S.; Cumming, D.R.S.

2003-01-01

The performance of wireless devices, using electrically small antennae, in the human intestine is investigated using the finite difference time domain method in recommended biomedical device telemetry bands. The radiation field intensity was found to depend on position but more strongly on frequency, with a transmission peak at 650 MHz.

Reinventing a p-type doping process for stable ZnO light emitting devices

Science.gov (United States)

Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2018-06-01

A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

Side-emitting high-power LEDs and their application in illumination

Science.gov (United States)

West, Robert S.

2002-11-01

Due to the rapid increase in flux performance from High Power LED's, illumination is an exciting growth market for solid state lighting. Today a white LED is 100+ Lm per device. This is approximately an order of magnitude below the kLm metric used for illumination applications. The radiation pattern from the LED is key in increasing the usable flux resulting in improved systems optical performance. This advancement in radiation pattern will allow new market opportunities, which were not yet feasible. In the future this effect of usable lumens will become more important as the flux per package increases. The radiation pattern of the LEDs can be controlled to optimize performance, appearance, and shape of the secondary optics. This advantage is unique to LEDs and can greatly improve system performance, control, and cosmetic appeal for the application. This paper will review the side emitting lens design, the integrated performance of this technology to secondary optics and how the Luxeon side emitter enables improved performance by creating more useable lumens.

Photovoltaic effect on the performance enhancement of organic light-emitting diodes with planar heterojunction architecture

Energy Technology Data Exchange (ETDEWEB)

Zhao, Dan; Huang, Wei; Guo, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Wang, Hua, E-mail: wanghua001@tyut.edu.cn [Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology (TYUT), Taiyuan 030024 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2017-04-15

Highlights: • The photovoltaic effect on the performance of OLEDs was studied. • The device performance with different planar heterojunctions was investigated. • The mechanism relies on the overlap of electroluminescence and absorption spectrum. - Abstract: Organic light-emitting diodes (OLEDs) with planar heterojunction (PHJ) architecture consisting of photovoltaic organic materials of fullerene carbon 60 (C{sub 60}) and copper (II) phthalocyanine (CuPc) inserted between emitting unit and cathode were constructed, and the photovoltaic effect on OLEDs performance was studied. The electroluminescent (EL) characteristics and mechanism of device performance variation without and with different PHJs (herein including C{sub 60}/CuPc, CuPc/C{sub 60} and CuPc) were systematically investigated in red, green and blue OLEDs. Of the three combinations, OLEDs with C{sub 60}/CuPc showed the highest efficiency. It is revealed that the photovoltaic C{sub 60}/CuPc PHJ can absorb part of photons, which are radiated from emission zone, then form excitons, and dissociated into free charges. Consequently, the high device efficiency of OLEDs performance improvement was acquired. This research demonstrates that PHJ consisting of two n- and p-type photovoltaic organic materials could be a promising methodology for high performance OLEDs.

Photovoltaic effect on the performance enhancement of organic light-emitting diodes with planar heterojunction architecture

International Nuclear Information System (INIS)

Zhao, Dan; Huang, Wei; Guo, Hao; Wang, Hua; Yu, Junsheng

2017-01-01

Highlights: • The photovoltaic effect on the performance of OLEDs was studied. • The device performance with different planar heterojunctions was investigated. • The mechanism relies on the overlap of electroluminescence and absorption spectrum. - Abstract: Organic light-emitting diodes (OLEDs) with planar heterojunction (PHJ) architecture consisting of photovoltaic organic materials of fullerene carbon 60 (C_6_0) and copper (II) phthalocyanine (CuPc) inserted between emitting unit and cathode were constructed, and the photovoltaic effect on OLEDs performance was studied. The electroluminescent (EL) characteristics and mechanism of device performance variation without and with different PHJs (herein including C_6_0/CuPc, CuPc/C_6_0 and CuPc) were systematically investigated in red, green and blue OLEDs. Of the three combinations, OLEDs with C_6_0/CuPc showed the highest efficiency. It is revealed that the photovoltaic C_6_0/CuPc PHJ can absorb part of photons, which are radiated from emission zone, then form excitons, and dissociated into free charges. Consequently, the high device efficiency of OLEDs performance improvement was acquired. This research demonstrates that PHJ consisting of two n- and p-type photovoltaic organic materials could be a promising methodology for high performance OLEDs.

Ultra-thin titanium nanolayers for plasmon-assisted enhancement of bioluminescence of chloroplast in biological light emitting devices

Energy Technology Data Exchange (ETDEWEB)

Hsun Su, Yen [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, Chia-Yun; Chang, Chung-Chien [Science and Technology of Accelerator Light Source, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Tu, Sheng-Lung; Shen, Yun-Hwei [Department of Resource Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-08-05

Ultra-thin titanium films were deposited via ultra-high vacuum ion beam sputter deposition. Since the asymmetric electric field of the metal foil plane matches the B-band absorption of chlorophyll a, the ultra-thin titanium nanolayers were able to generate surface plasmon resonance, thus enhancing the photoluminescence of chlorophyll a. Because the density of the states of plasmon resonance increases, the enhancement of photoluminescence also rises. Due to the biocompatibility and inexpensiveness of titanium, it can be utilized to enhance the bioluminescence of chloroplast in biological light emitting devices, bio-laser, and biophotonics.

Preliminary Results of Nuclear Fluorescence Imaging of Alpha and Beta Emitting Sources

International Nuclear Information System (INIS)

Feener, Jessica S.; Charlton, William S.

2013-06-01

The preliminary results from a series of nuclear fluorescence imaging experiments using a variety of radioactive sources and shielding are given. These experiments were done as part of a proof of concept to determine if nuclear fluorescence imaging could be used as a safeguards measurements tool or for nuclear warhead verification for nuclear arms control treaties such as the New Strategic Arms Reduction Treaty and the Fissile Material Cut-Off Treaty. An off-the-shelf Princeton Instruments charged coupled device camera system was used to image the emission of fluorescence photons from the de-excitation of nitrogen molecules in air that have been excited by ionizing radiation. The fluorescence emissions are primarily in the near ultraviolet range; between the wavelengths of 300 and 400 nm. Fluorescent imaging techniques are currently being investigated in a number of applications. A French research team has successfully demonstrated this concept for remote imaging of alpha contamination. It has also been shown that the phenomenon can be seen through translucent materials and that alpha radiation can be seen in the presence of large gamma backgrounds. Additionally, fluorescence telescopes and satellites utilize the de-excitation of nitrogen molecules to observe cosmic ray showers in the atmosphere. In cosmic ray shower detection, electrons are the main contributor to the excitation of the of nitrogen molecules in air. The experiments presented in this paper were designed to determine if the imaging system could observe beta emitting sources, differentiate between beta emitters and alpha emitting materials such as uranium oxide and uranium metal, and to further investigate the phenomenon through translucent and non-translucent materials. The initial results show that differentiation can be made between beta and alpha emitting sources and that the device can observe the phenomenon through very thin non-transparent material. Additionally, information is given on the

White organic light emitting diodes based on fluorene-carbazole dendrimers

International Nuclear Information System (INIS)

Usluer, Özlem; Demic, Serafettin; Kus, Mahmut; Özel, Faruk; Serdar Sariciftci, Niyazi

2014-01-01

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m 2 and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films

Oxadiazole-carbazole polymer (POC)-Ir(ppy)3 tunable emitting composites

Science.gov (United States)

Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla

2017-04-01

POC polymer is an oxadiazole-carbazole copolymer we have previously synthetized and established as light emitting material in Organic Light Emitting Devices (OLEDs), although POC quantum yield emission efficiency and color purity still need to be enhanced. On the other hand, tris[2-phenylpyridinato-C2,N]iridium(III) (Ir(ppy)3) complexes, namely Ir(ppy)3 are among the brightest luminophores employed in green light emitting devices. Our aim, in this work, is to take advantage of Ir(ppy)3 bright emission by combining the Ir complex with blue emitting POC to obtain tunable light emitting composites over a wide range of the visible spectrum. Here we have investigated the optical proprieties POC based nanocomposites with different concentrations of Ir(ppy)3, ranging from 1 to 10 wt%. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to the dopants, resulting in white-emitting composites. The most intense and stable emission has been found when POC was doped with about 5 wt% concentration of Ir(ppy)3.

p-i-n Homojunction in Organic Light-Emitting Transistors

NARCIS (Netherlands)

Bisri, Satria Zulkarnaen; Takenobu, Taishi; Sawabe, Kosuke; Tsuda, Satoshi; Yomogidao, Yohei; Yamao, Takeshi; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro

2011-01-01

A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously

Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

Science.gov (United States)

Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

2007-03-01

The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

Directory of Open Access Journals (Sweden)

Tien-Lung Chiu

2012-06-01

Full Text Available In this paper, we investigate the carrier injection and transport characteristics in iridium(IIIbis[4,6-(di-fluorophenyl-pyridinato-N,C2']picolinate (FIrpic doped phosphorescent organic light-emitting devices (OLEDs with oxadiazole (OXD as the bipolar host material of the emitting layer (EML. When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD.

ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis

Science.gov (United States)

Jha, Shrawan Kumar; Luan, Chunyan; To, Chap Hang; Kutsay, Oleksandr; Kováč, Jaroslav; Zapien, Juan Antonio; Bello, Igor; Lee, Shuit-Tong

2012-11-01

Pure ultra-violet (UV) (378 nm) electroluminescence (EL) from zinc oxide (ZnO)-nanorod-array/p-gallium nitride (GaN) light emitting devices (LEDs) is demonstrated at low bias-voltages (˜4.3 V). Devices were prepared merely by solution-synthesis, without any involvement of sophisticated material growth techniques or preparation methods. Three different luminescence characterization techniques, i.e., photo-luminescence, cathodo-luminescence, and EL, provided insight into the nature of the UV emission mechanism in solution-synthesized LEDs. Bias dependent EL behaviour revealed blue-shift of EL peaks and increased peak sharpness, with increasing the operating voltage. Accelerated bias stress tests showed very stable and repeatable electrical and EL performance of the solution-synthesized nanorod LEDs.

Investigations of thin p-GaN light-emitting diodes

DEFF Research Database (Denmark)

Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

2016-01-01

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

Smart design to resolve spectral overlapping of phosphor-in-glass for high-powered remote-type white light-emitting devices.

Science.gov (United States)

Lee, Jin Seok; Arunkumar, P; Kim, Sunghoon; Lee, In Jae; Lee, Hyungeui; Im, Won Bin

2014-02-15

The white light-emitting diode (WLED) is a state-of-the-art solid state technology, which has replaced conventional lighting systems due to its reduced energy consumption, its reliability, and long life. However, the WLED presents acute challenges in device engineering, due to its lack of color purity, efficacy, and thermal stability of the lighting devices. The prime cause for inadequacies in color purity and luminous efficiency is the spectral overlapping of red components with yellow/green emissions when generating white light by pumping a blue InGaN chip with yellow YAG:Ce³⁺ phosphor, where red phosphor is included, to compensate for deficiencies in the red region. An innovative strategy was formulated to resolve this spectral overlapping by alternatively arranging phosphor-in-glass (PiG) through cutting and reassembling the commercial red CaAlSiN₃:Eu²⁺ and green Lu₃Al₅O₁₂:Ce³⁺ PiG. PiGs were fabricated using glass frits with a low softening temperature of 600°C, which exhibited excellent thermal stability and high transparency, improving life time even at an operating temperature of 200°C. This strategy overcomes the spectral overlapping issue more efficiently than the randomly mixed and patented stacking design of multiple phosphors for a remote-type WLED. The protocol for the current design of PiG possesses excellent thermal and chemical stability with high luminous efficiency and color purity is an attempt to make smarter solid state lighting for high-powered remote-type white light-emitting devices.

Improving Light Extraction of Organic Light-Emitting Devices by Attaching Nanostructures with Self-Assembled Photonic Crystal Patterns

Directory of Open Access Journals (Sweden)

Kai-Yu Peng

2014-01-01

Full Text Available A single-monolayered hexagonal self-assembled photonic crystal (PC pattern fabricated onto polyethylene terephthalate (PET films by using simple nanosphere lithography (NSL method has been demonstrated in this research work. The patterned nanostructures acted as a scattering medium to extract the trapped photons from substrate mode of optical-electronic device for improving the overall external quantum efficiency of the organic light-emitting diodes (OLEDs. With an optimum latex concentration, the distribution of self-assembled polystyrene (PS nanosphere patterns on PET films can be easily controlled by adjusting the rotation speed of spin-coater. After attaching the PS nanosphere array brightness enhancement film (BEF sheet as a photonic crystal pattern onto the device, the luminous intensity of OLEDs in the normal viewing direction is 161% higher than the one without any BEF attachment. The electroluminescent (EL spectrum of OLEDs with PS patterned BEF attachment also showed minor color offset and superior color stabilization characteristics, and thus it possessed the potential applications in all kinds of display technology and solid-state optical-electronic devices.

Simple single-emitting layer hybrid white organic light emitting with high color stability

Science.gov (United States)

Nguyen, C.; Lu, Z. H.

2017-10-01

Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

Effect on the insulation material of a MOSFET device submitted to a standard diagnostic radiation beam

International Nuclear Information System (INIS)

De Magalhaes, C M S; Dos Santos, L A P; Souza, D do N; Maia, A F

2010-01-01

MOSFET electronic devices have been used for dosimetry in radiology and radiotherapy. Several communications show that due to the radiation exposure defects appear on the semiconductor crystal lattice. Actually, the structure of a MOSFET consists of three materials: a semiconductor, a metal and an insulator between them. The MOSFET is a quadripolar device with a common terminal: gate-source is the input; drain-source is the output. The gate controls the electrical current passing through semiconductor medium by the field effect because the silicon oxide acts as insulating material. The proposal of this work is to show some radiation effects on the insulator of a MOSFET device. A 6430 Keithley sub-femtoamp SourceMeter was used to verify how the insulating material layer in the structure of the device varies with the radiation exposure. We have used the IEC 61267 standard radiation X-ray beams generated from a Pantak industrial unit in the radiation energy range of computed tomography. This range was chosen because we are using the MOSFET device as radiation detector for dosimetry in computed tomography. The results showed that the behaviour of the electrical current of the device is different in the insulator and semiconductor structures.

Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Selyukov, A. S., E-mail: vslebedev.mobile@gmail.com; Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Vasiliev, R. B.; Sokolikova, M. S. [Moscow State University (Russian Federation)

2015-04-15

We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages.

Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

International Nuclear Information System (INIS)

Selyukov, A. S.; Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A.; Vasiliev, R. B.; Sokolikova, M. S.

2015-01-01

We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages

Device for the integral measurement of ionizing radiations

International Nuclear Information System (INIS)

Micheron, Francois.

1980-01-01

This invention relates to devices for the integral determination of ionizing radiations, particularly to the construction of a portable dosemeter. Portable measuring instruments have been suggested in the past, particularly dosemeters in which the discharge of a capacitor under the action of ionizing radiations is measured. Since the charge of a capacitor is not stable owing to dielectric imperfections, these measuring instruments have to be recalibrated at frequent intervals. To overcome this drawback, the invention suggests using the discharge of an electret, electrically charged to a pre-set initial value, under the action of ionizing radiations, as the transducer means of a dosemeter used in conjunction with display or warning systems [fr

Radiation hardness and qualification of semiconductor electronic devices for nuclear reactors

International Nuclear Information System (INIS)

Friant, A.; Payat, R.

1984-05-01

After a brief review of radiation effects in semiconductors and radiation damage in semiconductor devices, the problems of qualification of electronic equipment to be used in nuclear reactors are compared to those relative to nuclear weapons or space experiments. The conclusion is that data obtained at very high dose rates or under pulsed irradiation in weapons and space programs should not be directly applied to nuclear plant instrumentation. The need for a specific qualification of semiconductor devices appropriate for nuclear reactors is emphasized. Some irradiation studies at IRDI/DEIN (CEN-Saclay) are related [fr

A white organic light emitting diode with improved stability

International Nuclear Information System (INIS)

Zhang Zhilin; Jiang Xueyin; Zhu Wenqing; Zhang Buxin; Xu Shaohong

2001-01-01

A white organic light emitting diode (OLED) has been constructed by employing a new blue material and a red dye directly doped in the blue emitting layer. For comparison, another white cell with a blocking layer has also been made. The configurations of the devices are ITO/CuPc/NPB/JBEM(P):DCJT/Alq/MgAg (device 1) and ITO/CuPc/NPB/TPBi:DCJT/Alq/MgAg (device 2) where copper phthalocyanine (CuPc) is the buffer layer, N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1.1'bipheny1-4-4'-diamine (NPB) is the hole transporting layer, 9,10-bis(3'5'-diaryl)phenyl anthracene doped with perylene (JBEM(P)) is the new blue emitting material, N,arylbenzimidazoles (TPBi) is the hole blocking layer, tris(8-quinolinolato)aluminium complex (Alq) is the electron transporting layer, and DCJT is a red dye. A stable and current independent white OLED has been obtained in device 1, which has a maximum luminance of 14 850 cd m -2 , an efficiency of 2.88 Lm W -1 , Commission Internationale de l'Eclairage coordinates of x=0.32, y=0.38 between 4-200 mA cm -2 , and a half lifetime of 2860 h at the starting luminance of 100 cd m -2 . Device 1 has a stability more than 50 times better than that of device 2. (author)

Remote Optical Detection of Alpha Radiation

International Nuclear Information System (INIS)

Sand, J.; Hannuksela, V.; Toivonen, J.; Ihantola, S.; Peraejaervi, K.; Toivonen, H.

2010-01-01

Alpha emitting radiation sources are typically hard to detect with conventional detectors due to the short range of alpha particles in the air. However, previous studies have shown that remote detection of alpha radiation is possible by measuring the ionization-induced fluorescence of air molecules. The alpha-induced ultraviolet (UV) light is mainly emitted by molecular nitrogen and its fluorescence properties are well known. The benefit of this method is the long range of UV photons in the air. Secondly, the detection is possible also under a strong beta and gamma radiation backgrounds as they do not cause localized molecular excitation. In this work, the optical detection was studied using two different detection schemes; spectral separation of fluorescence from the background lighting and coincidence detection of UV photons originating from a single radiative decay event. Our spectrally integrated measurements have shown that one alpha decay event yields up to 400 fluorescence photons in the air and all these UV photons are induced in a 5 ns time-window. On the other hand, the probability of a background coincidence event in 5 ns scale is very rare compared to the number of background photons. This information can be applied in fluorescence coincidence filtering to discriminate the alpha radiation initiated fluorescence signal from much more intense background lighting. A device called HAUVA (Handheld Alpha UV Application) was built during this work for demonstration purposes. HAUVA utilizes spectral filtering and it is designed to detect alpha emitters from a distance of about 40 cm. Using specially selected room lighting, the device is able to separate 1 kBq alpha emitter from the background lighting with 1 second integration time. (author)

Improved efficiency in organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium doped 9,10-di(2-naphthyl) anthracene emission layer

Energy Technology Data Exchange (ETDEWEB)

Yuan Yongbo; Lian Jiarong; Li Shuang; Zhou Xiang [State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, 510275 (China)], E-mail: stszx@mail.sysu.edu.cn

2008-11-21

Organic light-emitting devices with tris-(8-hydroxyquinoline) aluminium (Alq{sub 3}) doped 9,10-di(2-naphthyl) anthracene (ADN) as the emission layer (EML) have been fabricated. These devices exhibit efficient electroluminescence (EL) originated from the Alq{sub 3} as the mass ratio of Alq{sub 3} to ADN was varied from 1 to 50%. The devices with an optimal Alq{sub 3} mass ratio of 10 wt% showed a peak EL efficiency and an external quantum efficiency of 9.1 cd A{sup -1} and 2.7% at a luminance of 1371 cd m{sup -2}, which is improved by a factor of 2.2 compared with 4.1 cd A{sup -1} and 1.2% at a luminance of 3267 cd m{sup -2} for conventional devices with the neat Alq{sub 3} as the EML.

Problematic radiation protective devices for X-ray diagnostics

International Nuclear Information System (INIS)

Beck, A.; Nanko, N.; Bruggmoser, G.; Eble, M.

1988-01-01

The authors report experimental test results of radiation safety glasses with a lead equivalence of 0.5 mm Pb. The glasses were tested on a phantom, with various radiation projections, for their shielding effect with regard to the eye lens. The protective effect at AP projection was 90%, which corresponds to the data given by the manufacturer. But in most cases of interventional radiology, the examiner's eyes are exposed to lateral radiation, due to the positioning of the monitor. In these cases, reflected radiation at the side of the glasses facing the eye may induce a dose to the lens that can be fourfold the dose received without wearing the glasses, so that wearing these glasses may enhance the hazard. Another protective device tested was lead-coated gloves. The manufacturer promises a protective effect of 50% at 100 kV. The experimental test data, obtained by taking into account technical characteristics of angiographic components, confirm a radiation shielding of about 20%. (orig./HP) [de

Radiation dose measurements of the insertion devices using radiachromic film dosimeters

International Nuclear Information System (INIS)

Alderman, J.; Semones, E.; Job, P. K.

2004-01-01

The Advanced Photon Source (APS) uses Nd-Fe-B permanent magnets in the insertion devices to produce x-rays for scientific research [1,2]. Earlier investigations have exhibited varying degrees of demagnetization of these magnets [3] due to irradiation from electron beams [4,5,6], 60 Co γ-rays [5], and high-energy neutrons [7,8]. Radiation-induced demagnetization has been observed in the APS insertion devices [9] and was first measured in December of 2001. Partial demagnetization has also been observed in insertion devices at the European Synchrotron Radiation Facility (ESRF) [4,6], where Nd-Fe-B permanent magnets are also used. Growing concern for the lifetime of APS insertion devices, as well as the permanent magnets that will be used in next-generation, high-power light sources, like the FEL [10,11], resulted from the partial demagnetization observations made at both facilities. This concern in relation to radiation-induced demagnetization spurred a long-term project to measure and analyze the absorbed doses received by the APS insertion devices. The project required a reliable photon high-dose dosimetry technique capable of measuring absorbed doses greater than 10 6 rad, which was not readily available at the APS. Through a collaboration with the National Institute of Standards and Technology (NIST), one such technique using radiachromic films was considered, tested, and calibrated at the APS. This consequently led to the implementation of radiachromic film dosimetry for measuring the absorbed doses received by the insertion devices for each of the APS runs

Electromagnetic Radiation Efficiency of Body-Implanted Devices

Science.gov (United States)

Nikolayev, Denys; Zhadobov, Maxim; Karban, Pavel; Sauleau, Ronan

2018-02-01

Autonomous wireless body-implanted devices for biotelemetry, telemedicine, and neural interfacing constitute an emerging technology providing powerful capabilities for medicine and clinical research. We study the through-tissue electromagnetic propagation mechanisms, derive the optimal frequency range, and obtain the maximum achievable efficiency for radiative energy transfer from inside a body to free space. We analyze how polarization affects the efficiency by exciting TM and TE modes using a magnetic dipole and a magnetic current source, respectively. Four problem formulations are considered with increasing complexity and realism of anatomy. The results indicate that the optimal operating frequency f for deep implantation (with a depth d ≳3 cm ) lies in the (108- 109 )-Hz range and can be approximated as f =2.2 ×107/d . For a subcutaneous case (d ≲3 cm ), the surface-wave-induced interference is significant: within the range of peak radiation efficiency (about 2 ×108 to 3 ×109 Hz ), the max-to-min ratio can reach a value of 6.5. For the studied frequency range, 80%-99% of radiation efficiency is lost due to the tissue-air wave-impedance mismatch. Parallel polarization reduces the losses by a few percent; this effect is inversely proportional to the frequency and depth. Considering the implantation depth, the operating frequency, the polarization, and the directivity, we show that about an order-of-magnitude efficiency improvement is achievable compared to existing devices.

Determination of the exposure speed of radiation emitted by the linear accelerator, using the code MCNP5 to evaluate the radiotherapy room shields of ABC Hospital

International Nuclear Information System (INIS)

Corral B, J. R.

2015-01-01

Humans should avoid exposure to radiation, because the consequences are harmful to health. Although there are different emission sources of radiation, generated by medical devices they are usually of great interest, since people who attend hospitals are exposed in one way or another to ionizing radiation. Therefore, is important to conduct studies on radioactive levels that are generated in hospitals, as a result of the use of medical equipment. To determine levels of exposure speed of a radioactive facility there are different methods, including the radiation detector and computational method. This thesis uses the computational method. With the program MCNP5 was determined the speed of the radiation exposure in the radiotherapy room of Cancer Center of ABC Hospital in Mexico City. In the application of computational method, first the thicknesses of the shields were calculated, using variables as: 1) distance from the shield to the source; 2) desired weekly equivalent dose; 3) weekly total dose equivalent emitted by the equipment; 4) occupation and use factors. Once obtained thicknesses, we proceeded to model the bunker using the mentioned program. The program uses the Monte Carlo code to probabilistic ally determine the phenomena of interaction of radiation with the shield, which will be held during the X-ray emission from the linear accelerator. The results of computational analysis were compared with those obtained experimentally with the detection method, for which was required the use of a Geiger-Muller counter and the linear accelerator was programmed with an energy of 19 MV with 500 units monitor positioning the detector in the corresponding boundary. (Author)

Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

Energy Technology Data Exchange (ETDEWEB)

Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

2010-07-01

The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

Science.gov (United States)

Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

2014-10-01

Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

Science.gov (United States)

Chondroudis, Konstantinos; Mitzi, David B.

2000-01-01

The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

Resonance effects of transition radiation emitted from thin foil stacks using electron beam

Energy Technology Data Exchange (ETDEWEB)

Awata, Takaaki; Yajima, Kazuaki; Tanaka, Takashi [Kyoto Univ. (Japan). Faculty of Engineering; and others

1997-03-01

Transition Radiation(TR) X rays are expected to be a high brilliant X-ray source because the interference among TR X rays emitted from many thin foils placed periodically in vacuum can increase their intensity and make them quasi-monochromatic. In order to study the interference (resonance) effects of TR, we measured the energy spectra of TR for several sets of thin-foil stacks at various emission angles. It was found that the resonance effects of TR are classified into intrafoil and interfoil resonances and the intensity of TR X rays increases nonlinearly with increasing foil number, attributing to the interfoil resonance. It became evident that the brilliance of TR is as high as that of SR. (author)

Effects of cosmic radiation on devices and embedded systems in aircrafts

Energy Technology Data Exchange (ETDEWEB)

Prado, Adriane C.M.; Federico, Claudio A.; Pereira Junior, Evaldo C.F.; Goncalez, Odair L., E-mail: claudiofederico@ieav.cta.br, E-mail: odairlelisgoncalez@gmail.com, E-mail: adriane.acm@hotmail.com, E-mail: evaldocarlosjr@gmail.com [Instituto de Estudos Avancados (IEAV/DCTA), Sao Jose dos Campos, SP (Brazil)

2013-07-01

Modern avionics systems use new electronic technologies devices that, due to their high degree of sophistication and miniaturization, are more susceptible to the effects of ionizing radiation, particularly the effect called 'Single Event Effect' (SEE) produced by neutron. Studies regarding the effects of radiation on electronic systems for space applications, such as satellites and orbital stations, have already been in progress for several years. However, tolerance requirements and specific studies, focusing on testing dedicated to avionics, have caused concern and gained importance in the last decade as a result of the accidents attributed to SEE in aircraft. Due to the development of a higher ceiling, an increase in airflow and a greater autonomy of certain aircrafts, the problem regarding the control of ionizing radiation dose received by the pilots, the crew and sensitive equipment became important in the areas of occupational health, radiation protection and flight safety. This paper presents an overview of the effects of ionizing radiation on devices and embedded systems in aircrafts, identifying and classifying these effects in relation to their potential risks in each device class. The assessment of these effects in avionics is a very important and emerging issue nowadays, which is being discussed by groups of the international scientific community; however, in South America, groups working in this area are still unknown. Consequently, this work is a great contribution and significantly valuable to the area of aeronautical engineering and flight safety associated to the effects of radiation on electronic components embedded in aircraft. (author)

Effects of cosmic radiation on devices and embedded systems in aircrafts

International Nuclear Information System (INIS)

Prado, Adriane C.M.; Federico, Claudio A.; Pereira Junior, Evaldo C.F.; Goncalez, Odair L.

2013-01-01

Modern avionics systems use new electronic technologies devices that, due to their high degree of sophistication and miniaturization, are more susceptible to the effects of ionizing radiation, particularly the effect called 'Single Event Effect' (SEE) produced by neutron. Studies regarding the effects of radiation on electronic systems for space applications, such as satellites and orbital stations, have already been in progress for several years. However, tolerance requirements and specific studies, focusing on testing dedicated to avionics, have caused concern and gained importance in the last decade as a result of the accidents attributed to SEE in aircraft. Due to the development of a higher ceiling, an increase in airflow and a greater autonomy of certain aircrafts, the problem regarding the control of ionizing radiation dose received by the pilots, the crew and sensitive equipment became important in the areas of occupational health, radiation protection and flight safety. This paper presents an overview of the effects of ionizing radiation on devices and embedded systems in aircrafts, identifying and classifying these effects in relation to their potential risks in each device class. The assessment of these effects in avionics is a very important and emerging issue nowadays, which is being discussed by groups of the international scientific community; however, in South America, groups working in this area are still unknown. Consequently, this work is a great contribution and significantly valuable to the area of aeronautical engineering and flight safety associated to the effects of radiation on electronic components embedded in aircraft. (author)

Improved color purity and efficiency by a coguest emitter system in doped red light-emitting devices

Energy Technology Data Exchange (ETDEWEB)

Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)]. E-mail: mdg1014@ciac.jl.cn

2007-01-15

We demonstrate red organic light-emitting diodes (OLEDs) with improved color purity and electroluminescence (EL) efficiency by codoping a green fluorescent sensitizer 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H -(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) as the second dopant and a red fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as the lumophore into tris(8-hydroquinoline) aluminum (Alq{sub 3}) host. It was found that the C545T dopant did not by itself emit but assisted the carrier trapping from the host Alq{sub 3} to the red emitting dopant. The red OLEDs realized by this approach not only kept the purity of the emission color, but also significantly improved the EL efficiency. The current efficiency and power efficiency, respectively, reached 12cd/A at a current density of 0.3mA/cm{sup 2} and 10lm/W at a current density of 0.02mA/cm{sup 2}, which are enhanced by 1.4 and 2.6 times compared with devices where the emissive layer is composed of the DCJTB doped Alq{sub 3}, and a stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in a wide range of voltage. Our results indicate that the coguest system is a promising method for obtaining high-efficiency red OLEDs.

LASIK

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Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm

Energy Technology Data Exchange (ETDEWEB)

Andreeva, E V; Il' ichenko, S N; Kostin, Yu O; Lapin, P I [Superlum Diodes Ltd., Moscow (Russian Federation); Ladugin, M A; Marmalyuk, A A [Open Joint-Stock Company ' M.F. Stel' makh Polyus Research and Development Institute' , Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2013-08-31

Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FWHM being 30 – 60 nm depending on the length of the active channel and the level of pumping. Under cw injection, the output power of light-emitting modules based on such SLDs can amount to 1.0 – 25 mW at the output of a single-mode fibre. It is demonstrated that the operation lifetime of these devices exceeds 30000 hours. Based on the light-emitting modules the prototypes of combined BroadLighter series light sources are implemented having a bell-shaped spectrum with the width up to 100 nm. (optical radiation sources)

Response of GaAs charge storage devices to transient ionizing radiation

Science.gov (United States)

Hetherington, D. L.; Klem, J. F.; Hughes, R. C.; Weaver, H. T.

Charge storage devices in which non-equilibrium depletion regions represent stored charge are sensitive to ionizing radiation. This results since the radiation generates electron-hole pairs that neutralize excess ionized dopant charge. Silicon structures, such as dynamic RAM or CCD cells are particularly sensitive to radiation since carrier diffusion lengths in this material are often much longer than the depletion width, allowing collection of significant quantities of charge from quasi-neutral sections of the device. For GaAs the situation is somewhat different in that minority carrier diffusion lengths are shorter than in silicon, and although mobilities are higher, we expect a reduction of radiation sensitivity as suggested by observations of reduced quantum efficiency in GaAs solar cells. Dynamic memory cells in GaAs have potential increased retention times. In this paper, we report the response of a novel GaAs dynamic memory element to transient ionizing radiation. The charge readout technique is nondestructive over a reasonable applied voltage range and is more sensitive to stored charge than a simple capacitor.

Synthesis and electroluminescent properties of blue emitting materials based on arylamine-substituted diphenylvinylbiphenyl derivatives for organic light-emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Lee, Kum Hee; You, Jae Nam; Won, Jiyeon; Lee, Jin Yong [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Seo, Ji Hoon [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

2011-10-31

This paper reports the synthesis and electroluminescent properties of a series of blue emitting materials with arylamine and diphenylvinylbiphenyl groups for applications to efficient blue organic light-emitting diodes (OLEDs). All devices exhibited blue electroluminescence with electroluminescent properties that were quite sensitive to the structural features of the dopants in the emitting layers. In particular, the device using dopant 4 exhibited sky-blue emission with a maximum luminance, luminance efficiency, power efficiency, external quantum efficiency and CIE coordinates of 39,000 cd/m{sup 2}, 12.3 cd/A, 7.45 lm/W, 7.71% at 20 mA/cm{sup 2} and (x = 0.17, y = 0.31) at 8 V, respectively. In addition, a blue OLED using dopant 2 with CIE coordinates (x = 0.16, y = 0.18) at 8 V exhibited a luminous efficiency, power efficiency and external quantum efficiency of 4.39 cd/A, 2.46 lm/W and 2.97% at 20 mA/cm{sup 2}, respectively.

FDA (Food and Drug Administration) Compliance Program Guidance Manual (FY 88). Section 4. Medical and radiological devices

International Nuclear Information System (INIS)

1988-01-01

The FDA Compliance Program Guidance Manual provides a system for issuing and filing program plans and instructions directed to Food and Drug Administration Field operations for project implementation. Section IV provides those chapters of the Compliance Program Guidance Manual which pertain to the areas of medical and radiological devices. Some of the areas of coverage include laser and sunlamp standards inspections, compliance testing of various radiation-emitting products such as television receivers and microwave ovens, emergency response planning and policy, premarket approval and device manufacturers inspections, device problem reporting, sterilization of devices, and consumer education programs on medical and radiological devices

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

Science.gov (United States)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

White organic light emitting diodes based on fluorene-carbazole dendrimers

Energy Technology Data Exchange (ETDEWEB)

Usluer, Özlem, E-mail: usluerozlem@yahoo.com.tr [Department of Chemistry, Muğla Sıtkı Koçman University, 48000 Muğla (Turkey); Demic, Serafettin [Department of Materials Science and Engineering, Izmir Katip Çelebi University, 35620 Çiğli, Izmir (Turkey); Kus, Mahmut, E-mail: mahmutkus1@gmail.com [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Özel, Faruk [Chemical Engineering Department and Advanced Technology R and D Center, Selçuk University, Konya (Turkey); Serdar Sariciftci, Niyazi [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz (Austria)

2014-02-15

In this paper, we report on theProd. Type: FTP fabrication and characterization of blue and white light emitting devices based on two fluorene-carbazole containing dendrimers and para-sexiphenyl (6P) oligomers. Blue light emitting diodes were fabricated using 9′,9″-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (OFC-G2) and 9′,9″-(9,9′-spirobi[fluorene]-2,7-diyl)bis-9′H-9,3′:6′,9″-tercarbazole (SBFC-G2) dendrimers as a hole transport and emissive layer (EML) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as an electron transport layer. White light emitting diodes were fabricated using 6P and these two dendrimers as an EML. OLED device with the structure of ITO/PEDOT:PSS (50 nm)/OFC-G2 (40 nm)/6P (20 nm)/LiF:Al (0.5:100 nm) shows maximum luminance of nearly 1400 cd/m{sup 2} and a Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.30) at 12 V. -- Highlights: • White organic light emitting diodes have been fabricated using two fluorene-carbazole dendrimers and para-sexiphenyl (6P) oligomers. • When only these two dendrimers are used as EML, OLED devices are emitted blue light. • The emission colors of OLED devices change from blue to white when 6P is coated on dendrimer films.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

Energy Technology Data Exchange (ETDEWEB)

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2014-02-17

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m{sup 2} corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m{sup 2} and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

Structural effects of a light emitting copolymer having perylene moieties in the side chain on the electroluminescent characteristics

International Nuclear Information System (INIS)

Lee, Chang Ho; Ryu, Seung Hoon; Jang, Hee Dong; Oh, Se Young

2004-01-01

We have synthesized a novel side chain light emitting copolymer. The side chain light emitting copolymer has a perylene moiety as an emitting unit and methylmethacrylate (MMA) as a spacer to decrease the concentration quenching of light emitting site in the polymer intrachain. These polymers are very soluble in most organic solvents such as monochlorobenzene, tetrahydrofuran, chloroform and benzene. The single-layered electroluminescent (EL) device consisting of ITO/carrier transporting copolymer and light emitting copolymer/Al was manufactured. The carrier transporting copolymer has triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. This device exhibits maximum external quantum efficiency when the MMA contents of light emitting copolymer is 30 wt.%. In particular, the device emits more blue light as MMA contents increase

Increasing the effective absorption of Eu3+-doped luminescent materials towards practical light emitting diodes for illumination applications

Science.gov (United States)

van de Haar, Marie Anne; Werner, Jan; Kratz, Nadja; Hilgerink, Tom; Tachikirt, Mohamed; Honold, Jürgen; Krames, Michael R.

2018-03-01

White light emitting diodes (LEDs) composed of a blue LED and a green/yellow downconverter material (phosphor) can be very efficient, but the color is often not considered very pleasant. Although the color rendering can be improved by adding a second, red-emitting phosphor, this generally results in significantly reduced efficacy of the device due to the broad emission of available conventional red-emitting phosphors. Trivalent europium is well-known for its characteristic narrow-band emission in the red region, with little radiation outside the eye sensitivity area, making it an ideal candidate for enabling high color quality as well as a high lumen equivalent of radiation from a spectrum point of view. However, a thorough study of the practical potential and challenges of Eu3+ as a red emitter for white LEDs has remained elusive so far due to the low excitation probability in the blue spectral range which is often even considered a fundamental limitation. Here, we show that the absorption in the blue region can be brought into an interesting regime for white LEDs and show that it is possible to increase both the color rendering and efficacy simultaneously using Eu3+ as a red emitter, compared to warm white LEDs comprising conventional materials.

Colour tuneable light-emitting transistor

Energy Technology Data Exchange (ETDEWEB)

Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2010-07-01

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

Optical modelling of photoluminescence emitted by thin doped films

International Nuclear Information System (INIS)

Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

2011-01-01

Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

X-ray pick-up device for dental radiography

International Nuclear Information System (INIS)

Weiss, M.E.

1980-01-01

The X-ray tube has got a tabular extension at the front end of which a W-shaped target is mounted. The target hit by electrons emits X-radiation passing through a ceramic window in the surface area. The extension can be inserted into the mouth opening of the patient. For holding down the tongue and for shielding purposes it has got a device shaped like a sleeve with diverging wings fastened to it. Thex leave the ceramic window uncovered. (orig.) [de

Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

Science.gov (United States)

Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

2013-05-06

We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

Assessment of radiofrequency/microwave radiation emitted by the antennas of rooftop-mounted mobile phone base stations

International Nuclear Information System (INIS)

Keow, M. A.; Radiman, S.

2006-01-01

Radiofrequency (RF) and microwave (MW) radiation exposures from the antennas of rooftop-mounted mobile telephone base stations have become a serious issue in recent years due to the rapidly evolving technologies in wireless telecommunication systems. In Malaysia, thousands of mobile telephone base stations have been erected all over the country, most of which are mounted on the rooftops. In view of public concerns, measurements of the RF/MW levels emitted by the base stations were carried out in this study. The values were compared with the exposure limits set by several organisations and countries. Measurements were performed at 200 sites around 47 mobile phone base stations. It was found that the RF/MW radiation from these base stations were well below the maximum exposure limits set by various agencies. (authors)