Creation of radiation defects in KCl crystals

International Nuclear Information System (INIS)

Lushchik, A.Ch.; Pung, L.A.; Khaldre, Yu.Yu.; Kolk, Yu.V.

1981-01-01

Optical and EPR methods were used to study the creation of anion and cation Frenkel defects in KCl crystals irradiated by X-ray and VUV-radiation. The decay of excitons with the creation of charged Frenkel defects (α and I centres) was detected and investigated at 4.2 K. The decay of excitons as well as the recombination of electrons with self-trapped holes leads to the creation of neutral Frenkel defects (F and H centres). The creation of Cl 3 - and Vsub(F) centres (cation vacancy is a component of these centres) by X-irradiation at 80 K proves the possibility of cation defects creation in KCl [ru

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

Science.gov (United States)

Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

2008-03-01

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

Adaptive repair induced by small doses of γ radiation in repair-defective human cells

International Nuclear Information System (INIS)

Zasukhina, G.D.; L'vova, G.N.; Vasil'eva, I.M.; Sinel'shchikova, T.A.; Semyachkina, A.N.

1993-01-01

Adaptive repair induced by small doses of gamma radiation was studied in repair-defective xeroderma pigmentosum, gout, and homocystinuria cells. The adaptation of cells induced by small doses of radiation was estimated after subsequent exposure to gamma radiation, 4-nitroquinoline-1-oxide, and N-methyl-N-nitro-N-nitrosoguanidine by three methods: (1) by the reduction in DNA breaks; (2) by induction of resistant DNA synthesis; and (3) by increased reactivation of vaccinia virus. The three cell types in response to the three different mutagens revealed differences in the mechanism of cell defense in excision repair, in the adaptive response, and in Weigl reactivation

Peculiarities of radiation defect formation and annealing in n-Si due to their interaction with each other and defect clusters

International Nuclear Information System (INIS)

Lugakov, P.F.; Lukyanitsa, V.V.

1984-01-01

Rearrangement processes proceeding during annealing (T/sub a/ = 50 to 500 0 C) of radiation defects in 60 Co γ-irradiated (T/sub irr/ 0 C) n-Si crystals (rho = 100 to 600 Ωcm) grown by the vacuum float-zone technique are studied. The temperature dependences of the Hall coefficient are measured. The results obtained are interpreted taking into account the interaction during annealing of vacancy-type defects (E-centres, divacancies) with each other and interstitial radiation defects (C/sub i/-C/sub s/ complexes, interstitial carbon C/sub i/). Phosphorus-two vacancies complexes, stable to T/sub a/ >= 500 0 C, are shown to be formed as a result of rearrangements and interaction of E-centres between themselves. The character of interaction of vacancy defects with interstitial ones is found to change significantly in the presence of defect clusters in the bulk of the crystal which are formed under heat treatment (T = 800 0 C, two hours) of the samples preliminary irradiated with fast neutrons (flux PHI/sub n/ = 1x10 14 to 1x10 16 cm -2 ). The peculiarities of radiation defects annealing observed in this case are explained taking into account the influence of defect clusters on the migration processes of mobile defects. Nature of radiation defects being formed at various stages of annealing is discussed. (author)

Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

International Nuclear Information System (INIS)

Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

1990-01-01

The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

Diffusion and aggregation of subsurface radiation defects in lithium fluoride nanocrystals

Science.gov (United States)

Voitovich, A. P.; Kalinov, V. S.; Martynovich, E. F.; Stupak, A. P.; Runets, L. P.

2015-09-01

Lithium fluoride nanocrystals were irradiated by gamma rays at a temperature below the temperature corresponding to the mobility of anion vacancies. The kinetics of the aggregation of radiation-induced defects in subsurface layers of nanocrystals during annealing after irradiation was elucidated. The processes that could be used to determine the activation energy of the diffusion of anion vacancies were revealed. The value of this energy in subsurface layers was obtained. For subsurface layers, the concentrations ratio of vacancies and defects consisting of one vacancy and two electrons was found. The factors responsible for the differences in the values of the activation energies and concentration ratios in subsurface layers and in the bulk of the crystals were discussed.

Radiation-induced segregation: A microchemical gauge to quantify fundamental defect parameters

International Nuclear Information System (INIS)

Simonen, E.P.; Bruemmer, S.M.

1994-12-01

Defect Kinetic are evaluated for austenitic stainless alloys by comparing model predictions to measured responses for radiation-induced grain boundary segregation. Heavy-ions, neutrons and proton irradiations having substantial statistical bases are examined. The combined modeling and measurement approach is shown to be useful for quantifying fundamental defect parameters. The mechanism evaluation indicates vacancy, migration energies of 1.15 eV or less and a vacancy formation energy at grain boundaries of 1.5 eV. Damage efficiencies of about 0.03 were established for heavy-ions and for light-water reactor neutrons. Inferred proton damage efficiencies were about 0.15. Segregation measured in an advanced gas-cooled reactor component was much greater than expected using the above parameters

Effect of radiation-induced substrate defects on microstrip gas chamber gain behaviour

International Nuclear Information System (INIS)

Pallares, A.; Brom, J.M.; Bergdolt, A.M.; Coffin, J.; Eberle, H.; Sigward, M.H.; Fontaine, J.C.; Barthe, S.; Schunck, J.P.

1998-01-01

The aim of this work was to quantify the influence of radiation-induced substrate defects on microstrip gas chamber (MSGC) gain behaviour. The first part of this paper focuses on radiation effects on a typical MSGC substrate: Desag D263 glass. Defect generation was studied for Desag D263 with pure silica (Suprasil 1) as a reference. We studied the evolution of defect concentration with respect to accumulated doses up to 480 kGy. Annealing studies of defects in Desag D263 were also performed. In the second part, the radiation sensitivity of Desag D263 glass has been linked to the behaviour of the detector under irradiation. Comparative gain measurements were taken before and after substrate irradiation at 10 and 80 kGy the minimal dose received during LHC operation and the dose for which defect density is maximum (respectively). (orig.)

Radiation-induced defect production in MgF2-Co crystals

International Nuclear Information System (INIS)

Nuritdinov, I.; Turdanov, K.; Mirinoyatova, N.M.; Rejterov, V.M.

1996-01-01

Impact of Co-admixture on structural radiation defects formation in the MgF 2 crystals is studied. It is found that the Co admixture facilitates the probability of generating the F- and m-type centers of radiation defects as well as creation of the F- and M-centers, perturbed by admixtures. The availability of structural defects leads in its turn to the admixture ions perturbation. It is reflected in the removal of prohibition on spin-prohibited transitions of the Co 2 + ions. It is assumed that creation of the M-centers is the main cause for removal of the prohibition on the spin-prohibited transitions. 8 refs., 4 figs

Effect of radiation-induced substrate defects on microstrip gas chamber gain behaviour

Energy Technology Data Exchange (ETDEWEB)

Pallares, A.; Brom, J.M.; Bergdolt, A.M.; Coffin, J.; Eberle, H.; Sigward, M.H. [Institute de Recherches Subatomiques, 67 - Strasbourg (France); Fontaine, J.C. [Universite de Haute Alsace, GRPHE, 61 rue Albert Camus, 68093 Mulhouse Cedex (France); Barthe, S.; Schunck, J.P. [Laboratoire PHASE (UPR 292 du CNRS), 23 rue du Loess, BP 28, 67037 Strasbourg Cedex 2 (France)

1998-08-01

The aim of this work was to quantify the influence of radiation-induced substrate defects on microstrip gas chamber (MSGC) gain behaviour. The first part of this paper focuses on radiation effects on a typical MSGC substrate: Desag D263 glass. Defect generation was studied for Desag D263 with pure silica (Suprasil 1) as a reference. We studied the evolution of defect concentration with respect to accumulated doses up to 480 kGy. Annealing studies of defects in Desag D263 were also performed. In the second part, the radiation sensitivity of Desag D263 glass has been linked to the behaviour of the detector under irradiation. Comparative gain measurements were taken before and after substrate irradiation at 10 and 80 kGy the minimal dose received during LHC operation and the dose for which defect density is maximum (respectively). (orig.) 26 refs.

Radioadaptive response and radiation-induced teratogenesis in the late period of organogenesis in mice. Involvement of p53-dependent apoptosis

International Nuclear Information System (INIS)

Wang, Bing; Ohyama, Harumi; Nose, Masako; Yukawa, Osami; Yamada, Takeshi; Hayata, Isamu

2003-01-01

In the past 5 years, a series of study was done at our institute to investigate radiation effects on the embryogenesis in mice with an emphasis on mechanisms involved in the radiation-induced adaptive response and the role of radiation-induced apoptosis played in teratogenesis in the late period of organogenesis. Using the limb bud system, we first found that radiation-induced apoptosis is involved in malformations, namely, radiation-induced apoptosis in the predigital regions of embryonic limb buds is responsible for digital defects in ICR mice. Examination of embryonic C57BL/6J mice with different p53 status led to further finding that susceptibility to the radiation-induced apoptosis and digital defects depends on both the p53 status and the radiation dose. p53 wild-type mice appeared to be the most sensitive, while p53 knockout mice were the most resistant. These results indicate that p53-dependent apoptosis mediates radiation-induced digital defects. The existence of a radioadaptive response in fetuses, i.e., the priming dose significantly decreases the apoptosis induction, prenatal death, and digital defects in the living fetuses induced by the challenging dose, was found first in ICR strain mice and later confirmed again in C57BL/6J mice. p53 heterozygous embryos did not show the radioadaptive response, indicating the involvement of p53 in the radioadaptive response. (author)

Temperature dependence of radiation induced defect creation in a-SiO2

International Nuclear Information System (INIS)

Devine, R.A.B.; Grouillet, A.; Berlivet, J.Y.

1988-01-01

The efficiency of oxygen vacancy defect creation in samples of amorphous SiO 2 subjected to ultraviolet laser or ionizing particle radiation (energetic H + ions) has been measured as a function of sample temperature during irradiation. For the case of laser radiation (E photon ≅ 5 eV) we find that vacancy centers are only created when the irradiation temperature is above 150 K. The efficiency of peroxy radical defect creation observed after post irradiation annealing is consistent with the behaviour of the oxygen vacancy creation efficiency. In samples with energetic protons, the opposite behaviour is observed and one finds that defect creation is enhanced as the implantation temperature is lowered. Possible physical mechanisms controlling the defect creation efficiency as a function of sample temperature and radiation are discussed. (orig.)

Stabilization of primary mobile radiation defects in MgF{sub 2} crystals

Energy Technology Data Exchange (ETDEWEB)

Lisitsyn, V.M. [National Research Tomsk Polytechnic University, pr. Lenina 30, Tomsk 634050 (Russian Federation); Lisitsyna, L.A. [State University of Architecture and Building, pl. Solyanaya 2, Tomsk 634003 (Russian Federation); Popov, A.I., E-mail: popov@ill.fr [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Kotomin, E.A. [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga (Latvia); Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany); Abuova, F.U.; Akilbekov, A. [L.N. Gumilyov Eurasian National University, 3 Munaitpasova Str., Astana (Kazakhstan); Maier, J. [Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart (Germany)

2016-05-01

Non-radiative decay of the electronic excitations (excitons) into point defects (F–H pairs of Frenkel defects) is main radiation damage mechanism in many ionic (halide) solids. Typical time scale of the relaxation of the electronic excitation into a primary, short-lived defect pair is about 1–50 ps with the quantum yield up to 0.2–0.8. However, only a small fraction of these primary defects are spatially separated and survive after transformation into stable, long-lived defects. The survival probability (or stable defect accumulation efficiency) can differ by orders of magnitude, dependent on the material type; e.g. ∼10% in alkali halides with f.c.c. or b.c.c. structure, 0.1% in rutile MgF{sub 2} and <0.001% in fluorides MeF{sub 2} (Me: Ca, Sr, Ba). The key factor determining accumulation of stable radiation defects is stabilization of primary defects, first of all, highly mobile hole H centers, through their transformation into more complex immobile defects. In this talk, we present the results of theoretical calculations of the migration energies of the F and H centers in poorely studied MgF{sub 2} crystals with a focus on the H center stabilization in the form of the interstitial F{sub 2} molecules which is supported by presented experimental data.

Molecular dynamics simulation on the formation and annihilation behaviors of radiation defects in Li2O

International Nuclear Information System (INIS)

Takuji Oda; Satoru Tanaka; Yasuhisa Oya

2006-01-01

The influence of radiation defects is one of the main factors that determine tritium release behavior from blanket breeding materials in fusion reactors. Classical molecular dynamics simulation (MD) is a powerful technique to investigate the radiation damage processes, because it can provide atomic-scale information on the defects. In this study, we conducted radiation simulation for Li 2 O using MD and analyzed formation and annihilation behaviors of radiation defects, as a fundamental research for radiation response of Li-containing oxides. Buckingham type two-body potential model was used. In order to remove the unphysical impulsive force at short inter-ionic distances in Buckingham model, each potential function was connected to that of the ZBL potential models at around 0.8 A. NEV ensemble was employed with the initial simulation temperature of 0 K. 10 x 10 x 10 supercell consisting of 4000 Li 2 O was used as a unit cell under 3D periodic boundary conditions. Radiation simulation was initiated by introducing an energy of a certain direction to an ion, as a displacement energy. The lowest displacement energy by which a defect was created and survived beyond 5 ps was regarded as the threshold energy. 42 and 21 displacement directions were surveyed for Li and O, respectively, based on the symmetry of the Li 2 O crystal. In both Li and O defect formations, [100] displacement shows significantly lower threshold energy than [111] displacement. Li defects were easily created than O defects almost in all directions. In fact, the average threshold energy except [111] displacement, which possesses extremely high threshold energy, was 21 eV for Li and 49 eV for O. In some cases, no defect could survive beyond 5 ps even by higher displacement energies than the threshold energy, due to the self-annealing effect. The self-annealing completed basically within 1 ps after introduction of displacement energy. At around this time, velocity distribution of all ions in the system

The semiconductor doping with radiation defects via proton and alpha-particle irradiation. Review

CERN Document Server

Kozlov, V A

2001-01-01

Paper presents an analytical review devoted to semiconductor doping with radiation defects resulted from irradiation by light ions, in particular, by protons and alpha-particles. One studies formation of radiation defects in silicon, gallium arsenide and indium phosphide under light ion irradiation. One analyzes effect of proton and alpha-particle irradiation on electric conductivity of the above-listed semiconducting materials. Semiconductor doping with radiation defects under light ion irradiation enables to control their electrophysical properties and to design high-speed opto-, micro- and nanoelectronic devices on their basis

Radiation-induced defect-formation in lithium hydride and deuteride monocrystals. [Electron and X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Pustovarov, V.A.; Betenekova, T.A.; Zav' yalov, N.A.; Cholakh, S.O. (Ural' skij Politekhnicheskij Inst., Sverdlovsk (USSR))

1983-08-01

Methods of stationary and pulse absorption spectroscopy were used to investigate into processes of formation and decay of radiation defects in cubic LiH and LiD crystals. F- and V-centers form at low temperatures during crystal irradiation by photons, creating excitons selectively, accelerator electrons, X-ray radiation. Analysis of possible mechanisms of defect formation shows that radiation defect formation in LiH is based on radiationless exciton decay. It is shown that efficiency of F- and V-centers generation in pure and impure crystals in 80-298 K range is the same. Exciton decay with formation of Frenkel radiation defects in pure LiH and LiD crystals takes place, probably, in regular crystal lattice points. Process of radiation defect formation as a result of near activator exciton decay takes place in impure LiH-Na, LiD-Na crystals.

The fractal character of radiation defects aggregation in crystals

International Nuclear Information System (INIS)

Akylbekov, A.; Akimbekov, E.; Baktybekov, K.; Vasil'eva, I.

2002-01-01

In processes of self-organization, which characterize open systems, the source of ordering is a non-equilibrium. One of the samples of ordering system is radiation-stimulated aggregation of defects in solids. In real work the analysis of criterions of ordering defects structures in solid, which is continuously irradiate at low temperature is presented. The method of cellular automata used in simulation of irradiation. It allowed us to imitate processes of defects formation and recombination. The simulation realized on the surfaces up to 1000x1000 units with initial concentration of defects C n (the power of dose) 0.1-1 %. The number of iterations N (duration of irradiation) mounted to 10 6 cycles. The single centers, which are the sources of formation aggregates, survive in the result of probabilistic nature of formation and recombination genetic pairs of defects and with strictly fixed radius of recombination (the minimum inter anionic distance). For determination the character of same type defects distribution the potential of their interaction depending of defects type and reciprocal distance is calculated. For more detailed study of processes, proceeding in cells with certain sizes of aggregates, the time dependence of potential interaction is constructed. It is shown, that on primary stage the potential is negative, then it increase and approach the saturation in positive area. The minimum of interaction potential corresponds to state of physical chaos in system. Its increasing occurs with formation of same type defects aggregates. Further transition to saturation and 'undulating' character of curves explains by formation and destruction aggregates. The data indicated that - these processes occur simultaneously in cells with different sizes. It allows us to assume that the radiation defects aggregation have a fractal nature

Metastable defect response in CZTSSe from admittance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Laser radiation effect on radiation-induced defects in heavy ion tracks in dielectrics

International Nuclear Information System (INIS)

Egorov, A.N.; Zhiryakov, B.M.; Kushin, V.V.; Lyapidevskij, V.K.; Khokhlov, N.B.

1988-01-01

Possibility of laser radiation resonance effect on radiation-induced defects in heavy ion tracks in dielectric materials is investigated. Absorption spectra in infrared, visible and ultraviolet ranges for cellulose nitrate samples irradiated by 6 MeV/nucleon 58 Ni ions and reactor gamma radiation are measured. Absorption spectra for irradiated and reference samples are presented. Two absorption bands λ 1 =0.33 μm (E 1 =3.9 eV) and λ 2 =0.72 μm (E 2 =1.7 eV) are detected. Etching rate decrease in a track under laser radiation effect is noticed. 3 refs.; 1 fig

Formation and properties of radiation-induced defects and radiolysis products in lithium orthosilicate

Energy Technology Data Exchange (ETDEWEB)

Tiliks, J.E.; Kizane, G.K.; Supe, A.A.; Abramenkovs, A.A.; Tiliks, J.J. (Latvian Univ., Riga (Latvia)); Vasiljev, V.G. (Acad. A.A. Bochvar Inst. of Inorganic Materials, Moscow (USSR))

1991-12-01

Formation and properties of radiation-induced defects and radiolysis products in polycrystalline powders and ceramic pellets of Li{sub 4}SiO{sub 4} were studied under the effect of various types of ionizing irradiation ({gamma} quants, accelerated electrons, reactor irradiation), humidity, temperature, impurities in the samples, etc. The content of radiation defects and radiolysis products poorly depends on irradiation type, dose rate, admixture elements. The concentration of defects highly depends on the temperature of irradiation, humidity, granural size. Empirical dependence of radiolysis degree {alpha} on the dose was found: {alpha}=5x10{sup -2}xD{sup 0.5} for {gamma} and electron irradiation (T{sub rad}=300-350 K) and {alpha}=5x10{sup -3}xD{sup 0.5} for reactor radiation (T{sub rad}=700-800 K); {alpha} - matrix dissociation degree (in %); D - dose (in MGy). Colloidal lithium and silicon, lithium and silicon oxides, and O{sub 2} are the final products of radiolysis. Radiation-induced defects change tritium thermo-extraction parameters, deteriorate mechanical, thermo-physical and electric properties of ceramics. (orig.).

Radiation defects in SrB4O7:Eu2+ crystals

International Nuclear Information System (INIS)

Yavetskiy, R.P.; Dolzhenkova, E.F.; Tolmachev, A.V.; Parkhomenko, S.V.; Baumer, V.N.; Prosvirnin, A.L.

2007-01-01

Radiation-induced defects in SrB 4 O 7 :Eu 2+ (0.033 at.%) single crystal irradiated with γ and X-ray quanta has been studied. The induced optical absorption in the 400-700 nm region has been ascribed to F + centers. The Eu 2+ ions have been shown to act simultaneously as traps and as radiative recombination centers of charge carriers. Basing on the thermally stimulated luminescence (TSL), optical absorption and photoluminescence studies of SrB 4 O 7 :Eu 2+ crystals, a TSL mechanism has been proposed associated with the decay of F + centers being in non-equivalent crystallographic positions followed by radiative recombination of charge carriers on europium ions. Various positions of localization of the radiation-induced defects in the SrB 4 O 7 crystal structure have been discussed

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Science.gov (United States)

Weinberg, I.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

EPR of radiation defects in lithium-oxyfluoride glass ceramics

Energy Technology Data Exchange (ETDEWEB)

Fedotovs, A; Rogulis, U; Sarakovskis, A; Dimitrocenko, L, E-mail: andris-f@navigator.l [Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, LV-1063, Riga (Latvia)

2010-11-01

We studied oxyfluoride composites based on lithium silicate glasses with yttrium fluorides and rare-earth dopants. The electron paramagnetic resonance (EPR) has been used to obtain information about radiation induced defects in these materials. Spectra have been measured before and after X-ray irradiation at room temperature and at liquid nitrogen temperature. Fluoride crystallites within samples were created by means of thermal treatment at specific temperatures. EPR spectra of radiation induced defects in oxyfluoride glass ceramics, in which crystallites have not been yet created, show no explicit hfs interaction of fluorine nuclei. However, in glass ceramics, which already contains fluoride crystallites, the hfs characteristic to fluorine nuclei appears in the EPR spectra. EPR hyperfine structure could be explained within a model of an F-type centre in YF{sub 3} crystalline phase.

EPR of radiation defects in lithium-oxyfluoride glass ceramics

Science.gov (United States)

Fedotovs, A.; Rogulis, U.; Sarakovskis, A.; Dimitrocenko, L.

2010-11-01

We studied oxyfluoride composites based on lithium silicate glasses with yttrium fluorides and rare-earth dopants. The electron paramagnetic resonance (EPR) has been used to obtain information about radiation induced defects in these materials. Spectra have been measured before and after X-ray irradiation at room temperature and at liquid nitrogen temperature. Fluoride crystallites within samples were created by means of thermal treatment at specific temperatures. EPR spectra of radiation induced defects in oxyfluoride glass ceramics, in which crystallites have not been yet created, show no explicit hfs interaction of fluorine nuclei. However, in glass ceramics, which already contains fluoride crystallites, the hfs characteristic to fluorine nuclei appears in the EPR spectra. EPR hyperfine structure could be explained within a model of an F-type centre in YF3 crystalline phase.

Investigation of radiation defects in solids using the EXAFS method

International Nuclear Information System (INIS)

Eritsyan, G.N.

1983-01-01

The exafs method is proposed as a more informative, universal one to investigate the radiation defects in solids. The successful results as obtained by the author using the synchrotron radiation source are reported for the first time. The measurements were carried out in GaAsP crystals irradiated with 50 MeV electrons

The influence of radiation-induced defects on thermoluminescence and optically stimulated luminescence of α-Al_2O_3:C

International Nuclear Information System (INIS)

Nyirenda, A.N.; Chithambo, M.L.

2017-01-01

It is known that when α-Al_2O_3:C is exposed to excessive amounts of ionising radiation, defects are induced within its matrix. We report the influence of radiation-induced defects on the thermoluminescence (TL) and optically stimulated luminescence (OSL) measured from α-Al_2O_3:C after irradiation to 1000 Gy. These radiation-induced defects are thermally unstable in the region 450–650 °C and result in TL peaks in this range when the TL is measured at 1 °C/s. Heating a sample to 700 °C obliterates the radiation-induced defects, that is, the TL peaks corresponding to the radiation induced defects are no longer observed in the subsequent TL measurements when moderate irradiation doses below 10 Gy are used. The charge traps associated with these radiation-induced defects are more stable than the dosimetric trap when the sample is exposed to either sunlight or 470-nm blue light from LEDs. TL glow curves measured following the defect-inducing irradiation produce a dosimetric peak that is broader and positioned at a higher temperature than observed in glow curves obtained before the heavy irradiation. In addition, sample sensitization/desensitization occurs due to the presence of these radiation-induced defects. Furthermore, both the activation energy and the kinetic order of the dosimetric peak evaluated when the radiation-induced defects are present in the sample are significantly lower in value than those obtained when these defects are absent. The radiation-induced defects also affect the shape and total light sum of the OSL signal as well as the position and width of the resultant residual phototransferred thermoluminescence main peak.

Current Evidence for Developmental, Structural, and Functional Brain Defects following Prenatal Radiation Exposure

Directory of Open Access Journals (Sweden)

Tine Verreet

2016-01-01

Full Text Available Ionizing radiation is omnipresent. We are continuously exposed to natural (e.g., radon and cosmic and man-made radiation sources, including those from industry but especially from the medical sector. The increasing use of medical radiation modalities, in particular those employing low-dose radiation such as CT scans, raises concerns regarding the effects of cumulative exposure doses and the inappropriate utilization of these imaging techniques. One of the major goals in the radioprotection field is to better understand the potential health risk posed to the unborn child after radiation exposure to the pregnant mother, of which the first convincing evidence came from epidemiological studies on in utero exposed atomic bomb survivors. In the following years, animal models have proven to be an essential tool to further characterize brain developmental defects and consequent functional deficits. However, the identification of a possible dose threshold is far from complete and a sound link between early defects and persistent anomalies has not yet been established. This review provides an overview of the current knowledge on brain developmental and persistent defects resulting from in utero radiation exposure and addresses the many questions that still remain to be answered.

Features of accumulation of radiation defects in metal with impurity

International Nuclear Information System (INIS)

Iskakov, B.M.

2002-01-01

The processes of accumulation and annealing of radiation defects in solids are being studied for the last fifty years quite intensively. Many regularities of these processes are fixed, but there are more unsolved problems. The computer simulation is one of the effective tools in finding the mechanisms of accumulation and annealing of radiation defects in solids. The numerical solution of the system of the differential equations by means of computers describing kinetics of accumulation of radiation point defects in metals with impurity, has allowed to receive a number of new outcomes. It was revealed, that a determinative factor influential in concentration of point defects (vacancies and interstitial atoms), formed during an exposure of metal, is the correlation a speed of Frenkel twins recombination, the capture of defects by impurity atoms and absorption of defects by other drainage, for example by dislocations. If the speed of capture of interstitial atoms by impurity atoms for two - three order is lower than the recombination speed of Frenkel twins and on two - three order exceeds the speed of capture of vacancies by impurity atoms, the concentration of interstitial atoms within the first seconds of an exposure passes through a maximum, then quickly decreases in some times and after that starts slowly to grow. The change of concentration of interstitial atoms in an initial period of an exposure does not influence on the change of a vacancy concentration. Within the whole period of an exposure, during which the concentration of interstitial atoms achieves a maximum and then is reduced, the vacancy concentration is steadily enlarged. However subsequent sluggish rise of concentration of interstitial atoms during an exposure is followed by the decrease of the vacancy concentration. The most remarkable feature of the kinetics of accumulation of interstitial atoms in metals with impurity is the presence of two extremum on curve dependence of interstitial atoms on a

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

International Nuclear Information System (INIS)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A.

1997-01-01

Processes of formation and annihilation of coordination defects in As 2 Se 3 Bi y and (As 2 Se 3 )(Bi 2 Se 3 ) y amorphous chalcogenide semiconductors induced by influence of Co 60 gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As 2 Se 3 Bi y glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs

Regularities of radiation defects build up on oxide materials surface; Zakonomernosti nakopleniya radiatsionnykh defektov na poverkhnosti oksidnykh materialov

Energy Technology Data Exchange (ETDEWEB)

Bitenbaev, M I; Polyakov, A I [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan); Tuseev, T [Inst. Yadernoj Fiziki, Almaty (Kazakhstan)

2005-07-01

Analysis of experimental data by radiation defects study on different oxide elements (silicon, beryllium, aluminium, rare earth elements) irradiated by the photo-, gamma-, neutron-, alpha- radiation, protons and helium ions show, that gas adsorption process on the surface centers and radiation defects build up in metal oxide correlated between themselves. These processes were described by the equivalent kinetic equations for analysis of radiation defects build up in the different metal oxides. It was revealed in the result of the analysis: number of radiation defects are droningly increasing up to limit value with the treatment temperature growth. Constant of radicals death at ionizing radiation increases as well. Amount of surface defects in different oxides defining absorbing activity of these materials looks as: silicon oxide{yields}beryllium oxide{yields}aluminium oxide. So it was found, that most optimal material for absorbing system preparation is silicon oxide by it power intensity and berylium oxide by it adsorption efficiency.

Chromosomal Aberrations in DNA Repair Defective Cell Lines: Comparisons of Dose Rate and Radiation Quality

Science.gov (United States)

George, K. A.; Hada, M.; Patel, Z.; Huff, J.; Pluth, J. M.; Cucinotta, F. A.

2009-01-01

Chromosome aberration yields were assessed in DNA double-strand break repair (DSB) deficient cells after acute doses of gamma-rays or high-LET iron nuclei, or low dose-rate (0.018 Gy/hr) gamma-rays. We studied several cell lines including fibroblasts deficient in ATM (product of the gene that is mutated in ataxia telangiectasia patients) or NBS (product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase, DNA-PK activity. Chromosomes were analyzed using the fluorescence in-situ hybridization (FISH) chromosome painting method in cells at the first division post-irradiation and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma radiation induced higher yields of both simple and complex exchanges in the DSB repair defective cells than in the normal cells. The quadratic dose-response terms for both chromosome exchange types were significantly higher for the ATM and NBS defective lines than for normal fibroblasts. However, the linear dose-response term was significantly higher only for simple exchanges in the NBS cells. Large increases in the quadratic dose response terms indicate the important roles of ATM and NBS in chromatin modifications that facilitate correct DSB repair and minimize aberration formation. Differences in the response of AT and NBS deficient cells at lower doses suggests important questions about the applicability of observations of radiation sensitivity at high dose to low dose exposures. For all iron nuclei irradiated cells, regression models preferred purely linear and quadratic dose responses for simple and complex exchanges, respectively. All the DNA repair defective cell lines had lower Relative biological effectiveness (RBE) values than normal cells, the lowest being for the DNA-PK-deficient cells, which was near unity. To further

Low-dose ionizing radiation alleviates Aβ42-induced defective phenotypes in Drosophila Alzheimer's disease models

International Nuclear Information System (INIS)

Hwang, SooJin; Jeong, Hae Min; Nam, Seon Young

2017-01-01

Alzheimer's disease (AD) is the most common neurodegenerative disease that is characterized by amyloid plaques, progressive neuronal loss, and gradual deterioration of memory. Amyloid imaging using positron emission tomography (PET) radiotracers have been developed and approved for clinical use in the evaluation of suspected neurodegenerative disease, including AD. Particularly, previous studies involving low-dose ionizing radiation on Aβ 42-treated mouse hippocampal neurons have suggested a potential role for low-dose ionizing radiation in the treatment of AD. However, associated in vivo studies involving the therapy effects of low-dose ionizing radiation on AD are still insufficient. As a powerful cell biological system, Drosophila AD models have been generated and established a useful model organism for study on the etiology of human AD. In this study, we investigated the hormesis effects of low-dose ionizing radiation on Drosophila AD models. Our results suggest that low-dose ionizing radiation have the beneficial effects on not only the Aβ42-induced developmental defective phenotypes but also motor defects in Drosophila AD models. These results might be due to a regulation of apoptosis, and provide insight into the hormesis effects of low-dose ionizing radiation. Our results suggest that low-dose ionizing radiation have the beneficial effects on not only the Aβ42-induced developmental defective phenotypes but also motor defects in Drosophila AD models. These results might be due to a regulation of apoptosis, and provide insight into the hormesis effects of low-dose ionizing radiation.

Positron Annihilation Study of Radiation Defects in Zinc Oxide

OpenAIRE

Tomiyama, Noriyuki; Takenaka, Minoru; Kuramoto, Eiichi

1992-01-01

Positron annihilation studies have been carried out to clarify the radiation induced defects in ZnO single crystals. Vapor-grown ZnO crystals were irradiated at 77 K with 28 MeV electrons. Before irradiation as-grown specimens showed the mean positron lifetime in the range of 160-195 ps. Electron irradiation increased the mean positron lifetime up to 205-210 ps.This long-lifetime disappeared until 473 K during successive isochronal annealing steps. The radiation-induced coloration was anneale...

Hydrogen interaction with radiation defects in p-type silicon

CERN Document Server

Feklisova, O V; Yakimov, E B; Weber, J

2001-01-01

Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

Influence of oxygen impurity atoms on defect clusters and radiation hardening in neutron-irradiated vanadium

International Nuclear Information System (INIS)

Bajaj, R.; Wechsler, M.S.

1975-01-01

Single crystal TEM samples and polycrystalline tensile samples of vanadium containing 60-640 wt ppm oxygen were irradiated at about 100 0 C to about 1.3 x 10 19 neutrons/cm 2 (E greater than 1 MeV) and post-irradiation annealed up to 800 0 C. The defect cluster density increased and the average size decreased with increasing oxygen concentration. Higher oxygen concentrations caused the radiation hardening and radiation-anneal hardening to increase. The observations are consistent with the nucleation of defect clusters by small oxygen or oxygen-point defect complexes and the trapping of oxygen at defect clusters upon post-irradiation annealing

Radiation damage in nanostructured metallic films

Science.gov (United States)

Yu, Kaiyuan

High energy neutron and charged particle radiation cause microstructural and mechanical degradation in structural metals and alloys, such as phase segregation, void swelling, embrittlement and creep. Radiation induced damages typically limit nuclear materials to a lifetime of about 40 years. Next generation nuclear reactors require materials that can sustain over 60 - 80 years. Therefore it is of great significance to explore new materials with better radiation resistance, to design metals with favorable microstructures and to investigate their response to radiation. The goals of this thesis are to study the radiation responses of several nanostructured metallic thin film systems, including Ag/Ni multilayers, nanotwinned Ag and nanocrystalline Fe. Such systems obtain high volume fraction of boundaries, which are considered sinks to radiation induced defects. From the viewpoint of nanomechanics, it is of interest to investigate the plastic deformation mechanisms of nanostructured films, which typically show strong size dependence. By controlling the feature size (layer thickness, twin spacing and grain size), it is applicable to picture a deformation mechanism map which also provides prerequisite information for subsequent radiation hardening study. And from the viewpoint of radiation effects, it is of interest to explore the fundamentals of radiation response, to examine the microstructural and mechanical variations of irradiated nanometals and to enrich the design database. More importantly, with the assistance of in situ techniques, it is appealing to examine the defect generation, evolution, annihilation, absorption and interaction with internal interfaces (layer interfaces, twin boundaries and grain boundaries). Moreover, well-designed nanostructures can also verify the speculation that radiation induced defect density and hardening show clear size dependence. The focus of this thesis lies in the radiation response of Ag/Ni multilayers and nanotwinned Ag

Radiation-induced defects formation in Bi-containing vitreous chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O.; Vakiv, M.; Balitska, V.; Kovalskiy, A. [Institute of Materials, Lvov (Ukraine)

1997-12-01

Processes of formation and annihilation of coordination defects in As{sub 2}Se{sub 3}Bi{sub y} and (As{sub 2}Se{sub 3})(Bi{sub 2}Se{sub 3}){sub y} amorphous chalcogenide semiconductors induced by influence of Co{sup 60} gamma-irradiation are investigated by photoelectric spectroscopy method. It is obtained that radiation-induced changes of photoelectrical properties on bioconcentration of As{sub 2}Se{sub 3}Bi{sub y} glasses are characterized by anomalous concentration dependence. The nature of this effect is associated with diamagnetic coordination defects formation. (author). 19 refs, 3 figs.

The influence of radiation-induced defects on thermoluminescence and optically stimulated luminescence of α-Al{sub 2}O{sub 3}:C

Energy Technology Data Exchange (ETDEWEB)

Nyirenda, A.N., E-mail: anyirenda@gmail.com; Chithambo, M.L.

2017-04-15

It is known that when α-Al{sub 2}O{sub 3}:C is exposed to excessive amounts of ionising radiation, defects are induced within its matrix. We report the influence of radiation-induced defects on the thermoluminescence (TL) and optically stimulated luminescence (OSL) measured from α-Al{sub 2}O{sub 3}:C after irradiation to 1000 Gy. These radiation-induced defects are thermally unstable in the region 450–650 °C and result in TL peaks in this range when the TL is measured at 1 °C/s. Heating a sample to 700 °C obliterates the radiation-induced defects, that is, the TL peaks corresponding to the radiation induced defects are no longer observed in the subsequent TL measurements when moderate irradiation doses below 10 Gy are used. The charge traps associated with these radiation-induced defects are more stable than the dosimetric trap when the sample is exposed to either sunlight or 470-nm blue light from LEDs. TL glow curves measured following the defect-inducing irradiation produce a dosimetric peak that is broader and positioned at a higher temperature than observed in glow curves obtained before the heavy irradiation. In addition, sample sensitization/desensitization occurs due to the presence of these radiation-induced defects. Furthermore, both the activation energy and the kinetic order of the dosimetric peak evaluated when the radiation-induced defects are present in the sample are significantly lower in value than those obtained when these defects are absent. The radiation-induced defects also affect the shape and total light sum of the OSL signal as well as the position and width of the resultant residual phototransferred thermoluminescence main peak.

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

International Nuclear Information System (INIS)

Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

2015-01-01

Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

Radiation induced defect flux behaviors at zirconium based component

International Nuclear Information System (INIS)

Choi, Sang Il; Kim, Ji Hyun; Kwon, Jun Hyun; Lee, Gyeong Geun

2013-01-01

In commercial reactor core, structure materials are located in high temperature and high pressure environment. Therefore, main concern of structure materials is corrosion and mechanical properties change than radiation effects on materials. However, radiation effects on materials become more important phenomena because research reactor condition is different from commercial reactor. The temperature is lower than 100 .deg. C and radiation dose is much higher than that of commercial reactor. Among the radiation effect on zirconium based metal, radiation induced growth (RIG), known as volume conservative distortion, is one of the most important phenomena. Recently, theoretical RIG modeling based on radiation damage theory (RDT) and balance equation are developed. However, these growth modeling have limited framework of single crystal and high temperature. To model theoretical RIG in research reactor, qualitative mechanism must be set up. Therefore, this paper intent is establishing defect flux mechanism of zirconium base metal in research reactor for RIG modeling. After than theoretical RIG work will be expanded to research reactor condition

Study of radiation defects in semiconductors by means of positron annihilation

International Nuclear Information System (INIS)

Krause-Rehberg, R.; Bondarenko, V.; Redmann, F.

2003-01-01

In a nuclear environment, a strong degradation of important properties is observed for many materials which are otherwise very reliable. This is especially valid for silicon, the most important semiconductor. In the presented paper, two examples for the study of lattice defects in silicon by means of positron annihilation will be given. Firstly, the degradation of silicon detectors used for the particle detection in high-luminosity collider experiments starts to limit the lifetime of the whole experiment. An annealing experiment on n-irradiated Si will be presented. Beside the destructive effect of high-radiation conditions, such radiation-induced defects can have a beneficial result. This will be demonstrated for the creation of new gettering zones by high-energy self-implantation of silicon. (author)

Optical spectroscopy and microscopy of radiation-induced light-emitting point defects in lithium fluoride crystals and films

Science.gov (United States)

Montereali, R. M.; Bonfigli, F.; Menchini, F.; Vincenti, M. A.

2012-08-01

Broad-band light-emitting radiation-induced F2 and F3+ electronic point defects, which are stable and laser-active at room temperature in lithium fluoride crystals and films, are used in dosimeters, tuneable color-center lasers, broad-band miniaturized light sources and novel radiation imaging detectors. A brief review of their photoemission properties is presented, and their behavior at liquid nitrogen temperatures is discussed. Some experimental data from optical spectroscopy and fluorescence microscopy of these radiation-induced point defects in LiF crystals and thin films are used to obtain information about the coloration curves, the efficiency of point defect formation, the effects of photo-bleaching processes, etc. Control of the local formation, stabilization, and transformation of radiation-induced light-emitting defect centers is crucial for the development of optically active micro-components and nanostructures. Some of the advantages of low temperature measurements for novel confocal laser scanning fluorescence microscopy techniques, widely used for spatial mapping of these point defects through the optical reading of their visible photoluminescence, are highlighted.

Study of grown-in and radiation-induced defects in indium phosphide

International Nuclear Information System (INIS)

Shaban, E.H.

1986-01-01

This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10 15 cm -3 . The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process

The formation of radiation defects in monohydrate of lithium sulfate

International Nuclear Information System (INIS)

Bahytzhan, A.B.; Zhussupov, A.A.; Kim, L.M.

2005-01-01

Full text: The crystals of lithium sulfate are monohydrate. At heating it pass waterless form. This crystals are represented the convenient for study of the crystal water influence on the radiation-induced processes. After irradiation in Li 2 SO 4 · H 2 O it was established the radicals SO 3 - and SO 4 - by the EPR method. The similar radiation induced centres are characteristic for the all sulphates. We established that at after irradiation by X-rays monohydrate sulphate lithium have not the absorption bands in a range 200-800 nm. It complicates study of the given systems. The dominant peak of recombination luminescence (TL) has a maximum in area 100 K. On its high-temperature wing there is 'shoulder' showing of more high-temperature and weak luminescence. At higher temperatures some very weak of TL peaks are observed. The dehydration of the samples does not essential influence for this weak TL. Because we have concentrated the basic attention only on low temperature peaks of recombination luminescence. The TL peak of a luminescence with a maximum at 100 K as a result of thermo treatment has disappeared. Dominant emission became the TL peak with a maximum at 130 K. It is necessary to note, that after dehydration the radiative sensitivity of sulphate lithium sharply has increased. Our rough estimation for this change give value almost two orders. In monohydrate the maximum of TL peak is observed at 130 K radiation by UV. This peak can be divided into two peaks with maximums at 100 K and 130 K. At an irradiation dehydrated samples by ultraviolet light the TL peaks are not observed. The given results allow connecting a luminescence at 100 K with disintegration of defects in the subsystem of crystal water. The products radiolysis of water molecules essential influence on recombination processes in sulphate subsystem. The one hand they suppress them, with another - there is a new channel of disintegration complex anions. It is established that photoconductivity of the

On kinetics of paramagnetic radiation defects accumulation in beryllium ceramics; O kinetike nakopleniya paramagnitnykh radiatsionnykh defektov v berillievykh keramikakh

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A I; Ryabikin, Yu A; Zashkvara, O V; Bitenbaev, M I; Petykhov, Yu V [Fiziko-Tekhnicheskij Inst., Almaty (Kazakhstan); Inst. Atomnoj Ehnergii, Kurchatov (Kazakhstan)

1999-07-01

Results of paramagnetic radiation defects concentration dependence study in beryllium ceramics from gamma-irradiation dose ({sup 60}Co) within interval 0-100 Mrem are cited. Obtained dose dependence has form of accumulation curve with saturation typical of for majority of solids (crystals, different polymers, organic substances and others) , in which under irradiation occur not only formation of paramagnetic radiation defects, but its destruction due to recombination and interaction with radiation fields. Analysis of accumulation curve by the method of distant asymptotics allows to determine that observed in gamma-irradiated beryllium ceramics double line of electron spin resonance is forming of two types of paramagnetic radiation defects. It was defined, that sum paramagnetic characteristics of beryllium ceramics within 1-100 Mrad gamma- irradiation dose field change insignificantly and define from first type of paramagnetic radiation defects.

Radiation defect production in quartz crystals with various structure perfectness degree; Radiatsionnoe defektoobrazovanie v kristallakh kvartsa s razlichnoj stepen`yu sovershenstva struktury

Energy Technology Data Exchange (ETDEWEB)

Khushvakov, O B

1992-01-01

Radiation defects production processes in pure and doped quartz crystals with various structure defectness, caused by preliminary irradiation with neutrons, protons, deuterons and {alpha}-particles, during various electron excitation densities were investigated. The distribution of colour centres along the thickness of irradiated quartz crystals was measured. It was supposed that colour centres are produced on account of inelastic energy losses as the result of collective decay of two or more interacting excitons. It was shown that in quartz crystals under the actions of protons with overthreshold energy 18 MeV and electrons with subthreshold energy 100 keV the same structure defects are formed. It was established that radiation defect production process has two stages. The first stage reveals radiation defects produced by preliminary irradiation. The second one reveals additional intrinsic defects formed under the action of gamma-rays and electrons. The probability dependence of defect production on neutron fluence and masses of incident particles was studied. It was supposed that the creation of additional defects in preliminary irradiated crystals is due to non-radiative decay of electron excitations near radiation-induced defects. It was shown that increase of impurity concentration leads to rate growth of accumulation of radiation induced defects. (A.A.D.) 15 refs. 4 figs.

Toward a comprehensive theory of radiation-induced swelling and creep - the point defect concentrations

International Nuclear Information System (INIS)

Mansur, L.K.; Yoo, M.H.

1979-01-01

The theory of void swelling and irradiation creep is now fairly comprehensive. A unifying concept on which most of this understanding rests is that of the rate theory point defect concentrations. Several basic aspects of this unifying conept are reviewed. These relate to local fluctuations in point defect concentrations produced by cascades, the effects of thermal and radiation-produced divacancies, and the effects of point defect trapping

Radiation-induced segregation on defect clusters in single-phase concentrated solid-solution alloys

International Nuclear Information System (INIS)

Lu, Chenyang; Yang, Taini; Jin, Ke; Gao, Ning; Xiu, Pengyuan; Zhang, Yanwen; Gao, Fei; Bei, Hongbin; Weber, William J.; Sun, Kai; Dong, Yan; Wang, Lumin

2017-01-01

A group of single-phase concentrated solid-solution alloys (SP-CSAs), including NiFe, NiCoFe, NiCoFeCr, as well as a high entropy alloy NiCoFeCrMn, was irradiated with 3 MeV Ni"2"+ ions at 773 K to a fluence of 5 × 10"1"6 ions/cm"2 for the study of radiation response with increasing compositional complexity. Advanced transmission electron microscopy (TEM) with electron energy loss spectroscopy (EELS) was used to characterize the dislocation loop distribution and radiation-induced segregation (RIS) on defect clusters in the SP-CSAs. The results show that a higher fraction of faulted loops exists in the more compositionally complex alloys, which indicate that increasing compositional complexity can extend the incubation period and delay loop growth. The RIS behaviors of each element in the SP-CSAs were observed as follows: Ni and Co tend to enrich, but Cr, Fe and Mn prefer to deplete near the defect clusters. RIS level can be significantly suppressed by increasing compositional complexity due to the sluggish atom diffusion. According to molecular static (MS) simulations, “disk” like segregations may form near the faulted dislocation loops in the SP-CSAs. Segregated elements tend to distribute around the whole faulted loop as a disk rather than only around the edge of the loop.

Complex control of ATM in response to radiation damage to DNA

International Nuclear Information System (INIS)

Lavin, M.F.; Beamish, H.; Chen, P.; Keating, K.; Scott, S.; Spring, K.; Kozlov, S.; Walters, D.

2000-01-01

Full text: The human genetic disorder ataxia-telangiectasia is characterized by neurodegeneration, immunodeficiency, extreme sensitivity to ionizing radiation, abnormalities in cell cycle checkpoints and a predisposition to develop leukemias and lymphomas. It appears likely that the basis of the hypersensitivity to ionizing radiation is due to defective sensing of double strand breaks in DNA and as a consequence a failure to repair all of these breaks. After exposure of cells to radiation the kinase activity of pre-existing ATM protein is rapidly activated leading to the radiation-induced phosphoylation of a number of important substrates including p53, c-Abl, BRCA1, NBS1 and chk2. Defective phosphorylation of BRCA1 and NBS1 is associated with increased sensitivity to ionizing radiation. We have also demonstrated that a reduction in the amount of ATM protein using antisense ATM cDNA transfection prior to exposure to radiation also sensitizes cells. This was further confirmed by treating human lymphoblastoid cells with EGF prior to radiation exposure. Furthermore radiation reverses the downregulation of ATM by EGF over a 3 hour period. Under these conditions cells are still sensitized to radiation since the restoration of ATM kinase activity is slower than that arising from activation of existing protein. Alterations in the amount of ATM protein are also observed in response to mitogenic agents. Thus it is evident that ATM protein and kinase activity are regulated in a complex fashion and this appears to vary in different tissues. The implications for altering ATM for therapeutic benefit will be discussed

Effect of radiation doses rate on SOS response induction in irradiated Escherichia coli Cells

International Nuclear Information System (INIS)

Cuetara Lugo, Elizabeth B.; Fuentes Lorenzo, Jorge L.; Almeida Varela, Eliseo; Prieto Miranda, Enrique F.; Sanchez Lamar, Angel; Llagostera Casal, Montserrat

2005-01-01

The present work is aimed to study the effect of radiation dose rate on the induction of SOS response in Escherichia coli cells. We measured the induction of sul A reporter gene in PQ-37 (SOS Chromotest) cells. Lead devises were built with different diameter and these were used for diminishing the dose rate of PX- -30M irradiator. Our results show that radiation doses rate significantly modifies the induction of SOS response. Induction factor increases proportionally to doses rate in Escherichia coli cells defective to nucleotide excision repair (uvrA), but not in wild type cells. We conclude that the dose rate affects the level of induction of SOS response

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Science.gov (United States)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Low-dose ionizing radiation alleviates Aβ42-induced defective phenotypes in Drosophila Alzheimer's disease models

Energy Technology Data Exchange (ETDEWEB)

Hwang, SooJin; Jeong, Hae Min; Nam, Seon Young [Low-dose Radiation Research Team, Radiation Health Institute, Korea Hydro & Nuclear Power Co. Ltd., Daejeon (Korea, Republic of)

2017-04-15

Alzheimer's disease (AD) is the most common neurodegenerative disease that is characterized by amyloid plaques, progressive neuronal loss, and gradual deterioration of memory. Amyloid imaging using positron emission tomography (PET) radiotracers have been developed and approved for clinical use in the evaluation of suspected neurodegenerative disease, including AD. Particularly, previous studies involving low-dose ionizing radiation on Aβ 42-treated mouse hippocampal neurons have suggested a potential role for low-dose ionizing radiation in the treatment of AD. However, associated in vivo studies involving the therapy effects of low-dose ionizing radiation on AD are still insufficient. As a powerful cell biological system, Drosophila AD models have been generated and established a useful model organism for study on the etiology of human AD. In this study, we investigated the hormesis effects of low-dose ionizing radiation on Drosophila AD models. Our results suggest that low-dose ionizing radiation have the beneficial effects on not only the Aβ42-induced developmental defective phenotypes but also motor defects in Drosophila AD models. These results might be due to a regulation of apoptosis, and provide insight into the hormesis effects of low-dose ionizing radiation. Our results suggest that low-dose ionizing radiation have the beneficial effects on not only the Aβ42-induced developmental defective phenotypes but also motor defects in Drosophila AD models. These results might be due to a regulation of apoptosis, and provide insight into the hormesis effects of low-dose ionizing radiation.

Investigation of radiation defects in InSb formed by charged high energy nuclear particles

International Nuclear Information System (INIS)

Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

1990-01-01

A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

Transient radiation responses of optical fibers: influence of MCVD process parameters

International Nuclear Information System (INIS)

Girard, Sylvain; Alessi, Antonino; Boukenter, Aziz; Ouerdane, Y.; Marcandella, Claude; Richard, Nicolas; Paillet, Philippe; Gaillardin, Marc; Raine, Melanie

2012-01-01

A dedicated set of fibers elaborated via the Modified Chemical Vapor Deposition (MCVD) technique is used to study the influence of composition and drawing parameters on their responses to an X-ray pulse representative of the radiation environments associated with Megajoule class lasers. These canonical fibers were designed to highlight the impact of these parameters on the amplitude and kinetics of the transient pulsed X-ray Radiation Induced Attenuation (RIA) at room temperature. From pre-forms differing by their core composition, three optical fibers were elaborated by varying the tension and speed during the drawing process. No or only slight RIA change results from the tested variations in drawing process parameters of Ge-doped, F-doped, and pure-silica-core fibers. This study reveals that the drawing process is not the main parameter to be optimized in order to enhance the radiation tolerance of MCVD specialty optical fibers for the LMJ harsh environment. From the hardness assurance point of view, a specialty fiber sufficiently tolerant to this environment should be robust against changes in the drawing process. The origins of the RIA observed in the different fibers are discussed on the basis of spectral decomposition of their measured RIA spectra, using sets of defects from the literature and related to the different core dopants. This analysis highlights the limits of the well-known defect set to reproduce the RIA above 1 for Ge-doped fibers whereas self-trapped holes and chlorine-related species seem responsible for the transient responses of pure-silica-core and F-doped fibers. (authors)

Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

International Nuclear Information System (INIS)

Kozlov, V.A.; Kozlovski, V.V.

2001-01-01

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation

Radiation defect distribution in silicon irradiated with 600 keV electrons

International Nuclear Information System (INIS)

Hazdra, P.; Dorschner, H.

2003-01-01

Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

Nature of oxygen donors and radiation defects in oxygen-doped germanium

International Nuclear Information System (INIS)

Fukuoka, Noboru; Atobe, Kozo; Honda, Makoto; Matsuda, Koji.

1991-01-01

The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its annealing stage at 60degC-140degC. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples. (author)

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si

Science.gov (United States)

Wallace, J. B.; Aji, L. B. Bayu; Shao, L.; Kucheyev, S. O.

2018-05-01

The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ˜-30 ° C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ˜0.1 eV , independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ˜0.04 at.%, evidenced by an increase in the activation energy. These results clearly demonstrate a crucial role of the collision cascade density and can be used to predict radiation defect dynamics in Si.

Effect of potential barrier growth of auto-localized excitons decay on radiation defects in AHC at low lattice symmetry

International Nuclear Information System (INIS)

Shunkeev, K.; Sagimbaeva, Sh.; Shunkeev, S.

2007-01-01

Effect of auto-localized excitons (ALE) luminescence strengthening is conditioned by two mechanisms: either decrease of potential barrier divided of quasi-free states and auto-localized states or decrease of emission-less channel effectiveness of exciton decay on primary radiation defects. In considered range (80 K) all excitons are only in auto-localized state. Therefore a realization of the first mechanism is improbable, For instant, in KI crystal at 80-100 K luminescence of free exciton is completely putting out, and ALE luminescence has maximal intensity. It is known that in the temperature range when ALE luminescence putting out is beginning an effectiveness of radiation defects is beginning to grow. This effect is related with predominating at that time emission-less exciton decay on radiation defects (F-H pairs). Experimentally by luminescence spectroscopy method activation energy of temperature putting out of ALE in AHC under uniaxial deformation. It is revealed, that increase of activation energy value has observed in a number of crystals: KBr→NaCl→KI→Na Br→CsBr→RbI. It is concluded, that effect of ALE intensity building-up and decrease of effectiveness of radiation defect formation are interpreted by growth of potential barrier of ALE decay into radiation defects under low symmetry of AHC lattice of low-temperature uniaxial deformation

Radiation defect formation in two-barrier structures based on silicon

International Nuclear Information System (INIS)

Madatov, R.S.; Abbasov, F.P.; Mustafayev, Yu.M.

2013-01-01

It was developed a silicon-based photodetector with high integral sensitivity in low-wave spectrum. It was investigated the effect of gamma radiation on the mechanism of current transport in the structure of Schottky barrier type and in transitions. It is shown that the double-barrier structures can improve the photovoltaic parameters of conventional detectors. For the first time it was obtained and studied the characteristics of two-barrier structures created on the same plane. The advantages over conventional structures are shown. The annealing point is changing the structure of radiation defects and leads to their disappearance

Characterization of defects and microstructures by neutrons and synchrotron radiations topography

International Nuclear Information System (INIS)

Baruchel, J.

1993-01-01

Neutrons and synchrotron radiation topography are complementary for defects study, for domains or phases coexistence in magnetic or high absorbing crystals, or crystals not supporting intense X irradiation. Applications to CuGe, NiAl, CuAl, FeSi binary alloys are shortly presented. (A.B.). 8 refs, 1 fig

Study of interaction among silicon, lithium, oxygen and radiation-induced defects for radiation-hardened solar cells

Science.gov (United States)

Berman, P. A.

1973-01-01

In order to improve reliability and the useful lifetime of solar cell arrays for space use, a program was undertaken to develop radiation-hardened lithium-doped silicon solar cells. These cells were shown to be significantly more resistant to degradation by ionized particles than the presently used n-p nonlithium-doped silicon solar cells. The results of various analyses performed to develop a more complete understanding of the physics of the interaction among lithium, silicon, oxygen, and radiation-induced defects are presented. A discussion is given of those portions of the previous model of radiation damage annealing which were found to be in error and those portions which were upheld by these extensive investigations.

A comparative study of low energy radiation responses of SiC, TiC and ZrC

International Nuclear Information System (INIS)

Jiang, M.; Xiao, H.Y.; Zhang, H.B.; Peng, S.M.; Xu, C.H.; Liu, Z.J.; Zu, X.T.

2016-01-01

In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to low energy irradiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irradiation that is observed experimentally. The stronger radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the radiation resistances of carbide materials.

Study of a radiation point defects ensemble in thin GaAs layers implanted by Be+ and Se+ ions

International Nuclear Information System (INIS)

Shcherbachev, K.D.; Bublik, V.T.; Kuripyatnik, A.V.; Yurchuk, S.Yu.

2001-01-01

The behaviour of a radiation point defects ensemble in SI-GaAs(100) wafers implanted by Be + (a dose of 1x10 14 at/cm 2 , an energy of 50 and 150 keV) and Se + (a dose of 5x10 14 at/cm 2 , an energy of 150, 180 and 240 keV) ions are studied by a triple-crystal diffractometry method. The strain profile and a number of residual radiation point defects are shown to be determined by defects annihilation, their sink to the surface and rechanneling during the implantation [ru

Influence of rare earth elements on radiation defect formation in silicon

International Nuclear Information System (INIS)

Nazyrov, D.E.

2006-01-01

Full text: It is known that efficiency of form and kinetics annealing of radiation defects influence greatly presence of initial in controlling electrically active or inactive impurities, their concentration and position in a lattice of a semiconductor. From this point of view of impurities of group of rare earths elements (REE) are of great interest, they interact with primary radiation defects creating electrically passive complexes such as . Thus they increase radiation stability of silicon. The purpose of the given work was the investigation of effect of irradiation by γ-quanta 60 Co properties of silicon doped REE-by samarium, gadolinium and erbium. The doping of silicon was carried out by growth process. Concentration of REE - samarium, gadolinium and erbium in silicon according to neutron-activation analysis equaled 10 14 /5·10 18 cm 2 . Silicon doped by phosphorus - 15/50 Ωcm were used as control samples. The results of investigations were obtained from DLTS (deep level transient spectroscopy) measurements, Hall effect and electrical measurements on definition of a resistivity, lifetime of minority carriers of a charge and optically active of concentrations of oxygen and carbon. The optical recharge by the infrared light emitting diode (P=10 mV, λ=0,95 μm) was used for investigation of deep levels (DL) situated in lower half of band gap. In control samples irradiated by the γ-quanta 60 Co with a dose 10 16 / 5·10 18 cm -2 formation DL was found in band, the parameters of which are well-known: A-, E-centers etc. Depending on a dose of an effect of irradiate in an energy spectrum of radiation defects in Si of essential changes, except for concentration is not observed. The deep levels concentration the E c -0,17 eV and E c -0,4 eV in Si is essentially reduced with respect control samples. The comparison the dose of associations of observable levels in irradiated n-Si with similar associations in control samples shows, that a velocity of introduction

Study on radiation-induced defects in germanium monocrystals by the X-ray diffusive scattering method

International Nuclear Information System (INIS)

Malinenko, I.A.; Perelygina, E.A.; Chudinova, S.A.; Shivrin, O.N.

1979-01-01

The method of X-ray diffusion scattering was used to study the defective structure of germanium monocrystals exposed to 750 keV proton irradiation with 3.8x10 16 -4.6x10 17 cm -2 doses and subjected to the subsequent annealing at temperatures up to 450 deg C. Detected in the crystals were the complex radiation induced structure characterized with oriented vacancy complexes and results from the both effects: irradiation and annealing. Radiation defect sizes in the section (hhO) have been determined. With increasing the annealing temperature the structure reconstruction resulting in the complex dissociation is observed

TEM study of radiation induced defects in baffle-former-barrel assembly from decommissioned NPP Greifswald

International Nuclear Information System (INIS)

Srba, O.; Michalicka, J.; Keilova, E.; Kocik, K.

2013-06-01

A complex transmission electron microscopy (TEM) study of reactor vessel internal (RVI) materials from the baffle-former-barrel assembly from NPP Greifswald (VVER 440), Unit 1 decommissioned after 15 service cycles has been undertaken. All parts of the baffle-former-barrel assembly are made from Ti-stabilized austenitic stainless steel 08Ch18N10T. The materials were exposed to different dose of neutron radiation (2.4 - 11.4 dpa) at temperatures 267 - 398 deg. C depending on position in the core. Three types of radiation induced defects were identified and quantified, namely: dislocations, cavities (voids) and fine-scaled precipitated particles of Ni-Si rich phases. Black-dot type defects were observed too. Operation conditions are around ≅ 300 deg. C that is why we have observed defect typical for both low and high regions of irradiation temperatures. (authors)

Formation of radiation-induced defects and their influence on tritium extraction from lithium silicates in out-of-pile experiments

International Nuclear Information System (INIS)

Abramenkovs, A.A.; Tiliks, J.E.

1991-01-01

Formation and properties of radiation-induced defects and radiolysis products in lithium silicates irradiated in nuclear reactor till absorbed doses 1000 MGy were studied. Radiation-induced defects (RD) and radiolysis products (RP) were qualitatively and quantitatively determinated by methods of chemical scavengers (MHS), electron-spin resonance (ESR) and optical spectroscopy. Colloidal silicon and lithium, lithium and silicon oxides, oxygen, silicon and lithium peroxides are the final products of the lithium silicates radiolysis at absorbed energy doses D abs = 1000 MGy. The concentration of radiation defects and products of radiolysis strongly depend on the temperature of irradiation, humidity, granural size. The thermostimulated extraction of tritiated water (95-98% of the released tritium is in chemical form of water) from lithium silicates ceramics proceeds according to two independent mechanisms: a) chemidesorption of surface localized tritiated water (the first order chemical reaction); b) formation of the tritium water molecules limited by triton diffusion to the near-surface layer of grains. It has been found that the concentration of radiation-induced defects considerably affects the tritium localization and releasing processes from lithium silicates. (orig.)

Annealing of radiation-induced defects in silicon in a simplified phenomenological model

International Nuclear Information System (INIS)

Lazanu, S.; Lazanu, I.

2001-01-01

The concentration of primary radiation-induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation. In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases, with one free parameter, for a wide range of particle fluences and/or for a wide energy range of incident particles, for different temperatures; the corresponding stationary solutions are also presented

Radiation effects and defects in lithium borate crystals

Science.gov (United States)

Ogorodnikov, Igor N.; Poryvay, Nikita E.; Pustovarov, Vladimir A.

2010-11-01

The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB3O5 (LBO), Li2B4O7 (LTB) and Li6Gd(BO3)3 (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li0 trapped-electron centers. At 290 K, the Li0 centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

Large-Scale Molecular Simulations on the Mechanical Response and Failure Behavior of a defective Graphene: Cases of 5-8-5 Defects

Science.gov (United States)

Wang, Shuaiwei; Yang, Baocheng; Yuan, Jinyun; Si, Yubing; Chen, Houyang

2015-10-01

Understanding the effect of defects on mechanical responses and failure behaviors of a graphene membrane is important for its applications. As examples, in this paper, a family of graphene with various 5-8-5 defects are designed and their mechanical responses are investigated by employing molecular dynamics simulations. The dependence of fracture strength and strain as well as Young’s moduli on the nearest neighbor distance and defect types is examined. By introducing the 5-8-5 defects into graphene, the fracture strength and strain become smaller. However, the Young’s moduli of DL (Linear arrangement of repeat unit 5-8-5 defect along zigzag-direction of graphene), DS (a Slope angle between repeat unit 5-8-5 defect and zigzag direction of graphene) and DZ (Zigzag-like 5-8-5 defects) defects in the zigzag direction become larger than those in the pristine graphene in the same direction. A maximum increase of 11.8% of Young’s modulus is obtained. Furthermore, the brittle cracking mechanism is proposed for the graphene with 5-8-5 defects. The present work may provide insights in controlling the mechanical properties by preparing defects in the graphene, and give a full picture for the applications of graphene with defects in flexible electronics and nanodevices.

Radiation induced segregation and point defects in binary copper alloys

International Nuclear Information System (INIS)

Monteiro, W.A.

1984-01-01

Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author) [pt

Investigation of γ-radiation defect formation at the Si-SiO2 interface

International Nuclear Information System (INIS)

Zaynabidinov, S.; Yulchiev, Sh.; Aliev, R.

2004-01-01

Full text: In work the results of an experimental research of process radiating defects formation on border are submitted undressed Si-SiO 2 at γ-radiation of the silicon MOS structures. As against similar researches the basic attention is given on the analysis of generation-recombination characteristics of structures, that allowed to establish character of the defects formation both on border undressed Si-SiO 2 , and in about border of Si. In experiments the structures received by thermal oxidation at T=1000 deg. C in environment of dry oxygen n-Si substrates with specific resistance ρ=0.3 Ω·cm are used. The thickness of oxygen layer made ∼0.1 μm. The test MOS-structures with an aluminium electrode and area ∼0.01 cm 2 irradiated with γ-quanta from the 60 Co source by a dose of 10 6 rad. The choice of a dose of an radiation is caused by that at such dose the essential increase of concentration of superficial defects is observed, and at the same time there are no significant changes of parameters of a substrate because of formation of point defects in volume of silicon. The generation characteristics of structures such, as speed of superficial generation s and time of life τ g of carriers of a charge in about surface before and after an radiation defined by a method isothermal relaxation of nonequilibrium high-frequency capacity. The relaxation of nonequilibrium capacity registered at submission on translating structure in a condition of deeper inversion. Such mode of measurement allows to neglect the contribution which is brought in recharged of superficial condition in superficial generation currents. Are received relaxation dependence of structures before and after an radiation, and also spectra of distribution of density of superficial condition on width of the forbidden zone Si dN ss /dE. The increase at 12-15 of time of concentration of superficial condition with E=E c -(0.18±0.03) eV in the irradiated structures is established. Such condition is

Study of defects in radiation tolerant semiconductor SiC

Energy Technology Data Exchange (ETDEWEB)

Itoh, Hisayoshi; Kawasuso, Atsuo; Ohshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

1997-03-01

Electron spin resonance (ESR) was used to study defects introduced in n-type 6H-SiC by 3 MeV electron irradiation. Two ESR signals labeled A and B related to radiation induced defects were observed. An ESR signal B can be explained by a fine interaction with an effective spin S=1. The g and D tensors of the signal B were found to be axially symmetric along the c-axis. The principal values of the g were obtained to be g parallel = 2.003 and g perpendicular = 2.008, and the absolute value of the D was 3.96x10{sup -2} cm{sup -1} at 100 K for this signal. It was also found that the value |D| decreased with increasing temperature. Isochronal annealing showed that the A and B centers have annealing stages of {approx_equal}200degC and {approx_equal}800degC, respectively. Tentative structural models are discussed for these ESR centers. (author)

Edge dislocations as sinks for sub-nanometric radiation induced defects in α-iron

Science.gov (United States)

Anento, N.; Malerba, L.; Serra, A.

2018-01-01

The role of edge dislocations as sinks for small radiation induced defects in bcc-Fe is investigated by means of atomistic computer simulation. In this work we investigate by Molecular Statics (T = 0K) the interaction between an immobile dislocation line and defect clusters of small sizes invisible experimentally. The study highlights in particular the anisotropy of the interaction and distinguishes between absorbed and trapped defects. When the considered defect intersects the dislocation glide plane and the distance from the dislocation line to the defect is on the range between 2 nm and 4 nm, either total or partial absorption of the cluster takes place leading to the formation of jogs. Residual defects produced during partial absorption pin the dislocation. By the calculation of stress-strain curves we have assessed the strength of those residues as obstacles for the motion of the dislocation, which is reflected on the unpinning stresses and the binding energies obtained. When the defect is outside this range, but on planes close to the dislocation glide plane, instead of absorption we have observed a capture process. Finally, with a view to introducing explicitly in kinetic Monte Carlo models a sink with the shape of a dislocation line, we have summarized our findings on a table presenting the most relevant parameters, which define the interaction of the dislocation with the defects considered.

Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

CERN Document Server

Kazakevich, L A

2003-01-01

It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

Radiation defects in GaP and solid solution of GaAssub(1-x)Psub(x)

International Nuclear Information System (INIS)

Brailovsky, E.Y.; Grigoryan, N.E.; Marchouk, N.D.; Pambuhchyan, N.H.; Tartachnik, V.P.

1979-01-01

The introduction and annealing behaviour of radiation defects in GaP and GaAssub(1-x)Psub(x) at 1 to 50 MeV electron irradiation was investigated by the Hall effect, thermal stimulated current (TSC) and optical absorption. The recovery of electrical properties of irradiated GaAssub(1-x)Psub(x) was dependent on x. From TSC measurement it has been shown that the predominant radiation defects in GaP are electron traps Esub(c) - (1.2 +- 0.1)eV and hole traps Esub(v) + (1.5 +- 0.15)eV which are the cause of n and p decreasing in GaP crystals. The formation of density state 'tails' during irradiation was investigated. (author)

On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data

Science.gov (United States)

Pankratov, E. L.

2018-05-01

We introduce a model of redistribution of point radiation defects, their interaction between themselves and redistribution of their simplest complexes (divacancies and diinterstitials) in a multilayer structure. The model gives a possibility to describe qualitatively nonmonotonicity of distributions of concentrations of radiation defects on interfaces between layers of the multilayer structure. The nonmonotonicity was recently found experimentally. To take into account the nonmonotonicity we modify recently used in literature model for analysis of distribution of concentration of radiation defects. To analyze the model we used an approach of solution of boundary problems, which could be used without crosslinking of solutions on interfaces between layers of the considered multilayer structures.

Radiation effects and defects in lithium borate crystals

Energy Technology Data Exchange (ETDEWEB)

Ogorodnikov, Igor N; Poryvay, Nikita E; Pustovarov, Vladimir A, E-mail: igor.ogorodnikov@bk.ru [Ural Federal University, Mira Street, 19, Ekaterinburg 620002 (Russian Federation)

2010-11-15

The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB{sub 3}O{sub 5} (LBO), Li{sub 2}B{sub 4}O{sub 7} (LTB) and Li{sub 6}Gd(BO{sub 3}){sub 3} (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li{sup 0} trapped-electron centers. At 290 K, the Li{sup 0} centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

Atypical radiation response of SCID cells

Science.gov (United States)

Chawapun, Nisa

Murine SCID (severe combined immune deficiency) cells are well known for their defect in DNA double-strand break repair and in variable(diversity)joining [V(D)J] recombination due to a mutation in a catalytic subunit of DNA-dependent protein kinase (DNA-PKcs). As a consequence, scid cells are hypersensitive to ionizing radiation. The present study showed that asynchronous populations of scid cells were about two-fold more sensitive than Balb/c with respect to cell killing and the defect in scid cells was corrected by complementation with human chromosome 8. Analysis of the survival of synchronized populations as a function of the cell cycle revealed that while scid cells were hypersensitive in all cell cycle phases compared to wild-type cells, this hypersensitivity is even more pronounced in G1 phase. The hypersensitivity reduced as the cells progressed into S phase suggested that homologous recombination repair plays a role. The results imply that there are at least two pathways for the repair of DSB DNA, consistent with a model previously proposed by others. The scid cells were also more sensitive to UVC light (254 nm) killing as compared to wild type cells by clonogenic survival. Using a host cell reactivation (HCR) assay to study the nucleotide excision repair (NER) which is the major repair pathway for UV-photoproducts, the results showed that NER in scid cells was not as efficient as CB- 17. This suggests that DNA-PK is involved in NER as well as non-homologous end-joining (NHEJ) DSB repair which is responsible for ionizing radiation sensitivity in scid cells. Repair in scid cells was not totally absent as shown by low dose rate sparing of cell killing after exposure to 137Cs γ-rays at dose rate of 0.6 cGy/h, 1.36 cGy/h, 6 cGy/h as compared to high dose rate at 171 cGy/min, although this phenomenon could be explained partly by proliferation. However, for radiation induced transformation, no significant dose rate effect was seen. A plot of transformation

On the recovery of neutron irradiation defects of some metals and alloys

International Nuclear Information System (INIS)

Mohamed, H.G.; Matta, M.K.

2001-01-01

This work deals with the recovery of mechanical properties of neutron irradiated material to the pre-irradiating values. Rate of migration of defects responsible for radiation hardening and those inducing radiation embrittlement is analyzed. Role of crystalline structure is also studied. Materials of FCC crystal structure used in these investigations are pure Cu, Cu-5 at. % , Al, Cu-5 at. % Si, some Ni base binary alloys and some austenitic stainless steels mainly of AISI types 304 and 316. Among materials of BCC crystalline structure Fe-6 wt % Cr alloy is used. Alloys with CPH structure used in the present investigations are Zr-l wt. % Nb and Mg - 4.8 wt % Li alloys. History of material is studied such as cold worked state and annealed condition. Character of alloying elements and their amounts were of interest in this study. The result showed that the higher the percentage radiation hardening, the slower is the migration of radiation defects. Irradiated pure metals recovered at a higher temperature than alloys. Cold work accelerated the migration of radiation defects. The amount of alloying elements had little effect on the recovery temperatures. Character of solute alloying elements (substitutional or interstitial) revealed sensitive effect on the migration of radiation defects. Rate of migration of defects causing hardening can be different from those causing embrittlement. (author)

Defects in dilute nitrides

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2005-01-01

We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

Peculiarities of approximation for reactor neutron energy spectra during computerized simulation of radiation defects

International Nuclear Information System (INIS)

Kupchishin, A.A.; Kupchishin, A.I.; Stusik, G.; Omarbekova, Zh.

2001-01-01

Peculiarities of approximation for reactor neutron energy spectra during radiation defects computerized simulation were discussed. Approximation of neutron spectra N(E) was carried out by N(E)=α·exp(-β·E)·sh(γ·E) formula (1), where α, β, γ - approximation coefficients. In the capacity of operating reactor data experimental data on 235 U and 239 Pu were applied. The algorithm was designed, and acting soft ware for spectra parameters calculation was developed. The following values of approximation parameters were obtained: α=80.8; β=0.935;γ=2.04 (for uranium and plutonium these coefficients are less distinguishing). Then with use of formula 1 and α, β, γ coefficients the approximation curves were constructed. These curves satisfactorily describe existing experimental data and allowing to use its for radiation defects simulation in the reactor materials

Radiation-Induced Defects in Kaolinite as Tracers of Past Occurrence of Radionuclides in a Natural Analogue of High Level Nuclear Waste Repository

Science.gov (United States)

Allard, T.; Fourdrin, C.; Calas, G.

2007-05-01

Understanding the processes controlling migrations of radioelements at the Earth's surface is an important issue for the long-term safety assessment of high level nuclear waste repositories (HLNWR). Evidence of past occurrence and transfer of radionuclides can be found using radiation-induced defects in minerals. Clay minerals are particularly relevant because of their widespread occurrence at the Earth's surface and their finely divided nature which provides high contact area with radioactive fluids. Owing to its sensitivity to radiations, kaolinite can be used as natural, in situ dosimeter. Kaolinite is known to contain radiation-induced defects which are detected by Electron Paramagnetic Resonance. They are differentiated by their nature, their production kinetics and their thermal stability. One of these defects is stable at the scale of geological periods and provides a record of past radionuclide occurrence. Based on artificial irradiations, a methodology has been subsequently proposed to determine paleodose cumulated by kaolinite since its formation. The paleodose can be used to derive equivalent radioelement concentrations, provided that the age of kaolinite formation can be constrained. This allows quantitative reconstruction of past transfers of radioelements in natural systems. An example is given for the Nopal I U-deposit (Chihuahua, Mexico), hosted in hydrothermally altered volcanic tufs and considered as analogue of the Yucca Mountain site. The paleodoses experienced by kaolinites were determined from the concentration of defects and dosimetry parameters of experimental irradiations. Using few geochemical assumption, a equivalent U-content responsible for defects in kaolinite was calculated from the paleodose, a dose rate balance and model ages of kaolinites constrained by tectonic phases. In a former study, the ages were assumptions derived from regional tectonic events. In thepresent study, ages of mineralization events are measured from U

Tritium release kinetics of Li{sub 2}O with radiation defects

Energy Technology Data Exchange (ETDEWEB)

Grishmanov, V; Tanaka, Satoru [Tokyo Univ. (Japan). Faculty of Engineering

1998-03-01

The study of an influence of radiation defects on tritium release behavior from polycrystalline Li{sub 2}O was performed by the in-pile and out-of-pile tritium release experiments. The samples were pre-irradiated by accelerated electrons to various absorbed doses up to 140 MGy and then exposed to the fluence of 10{sup 17} thermal neutrons/m{sup 2}. The radiation defects introduced by electron irradiation in Li{sub 2}O cause the retention of tritium. The linear temperature increase of the electron-irradiated samples disclosed two tritium release peaks: first starts at {approx}600 K with the maximum at {approx}800 K and second appears at {approx}950 K with the maximum at {approx}1200 K. It is thought that the tritium release at high temperatures (> 950 K) is due to the thermal decomposition of LiT. In order to further investigated the formation of lithium hydrides, the diffuse-reflectance Fourier transform infrared (FTIR) absorption spectroscopy was applied. The Li{sub 2}O powder was irradiated by electron accelerator under D{sub 2} containing atmosphere (N{sub 2} + 10% D{sub 2}). An absorption band specific to the Li{sub 2}O was observed at 668 cm{sup -1} and attributed to the Li-D stretching vibration. (author)

Sigmoidal response model for radiation risk

International Nuclear Information System (INIS)

Kondo, Sohei

1995-01-01

From epidemiologic studies, we find no measurable increase in the incidences of birth defects and cancer after low-level exposure to radiation. Based on modern understanding of the molecular basis of teratogenesis and cancer, I attempt to explain thresholds observed in atomic bomb survivors, radium painters, uranium workers and patients injected with Thorotrast. Teratogenic injury induced by doses below threshold will be completely eliminated as a result of altruistic death (apoptosis) of injured cells. Various lines of evidence obtained show that oncomutations produced in cancerous cells after exposure to radiation are of spontaneous origin and that ionizing radiation acts not as an oncomutation inducer but as a tumor promoter by induction of chronic wound-healing activity. The tissue damage induced by radiation has to be repaired by cell growth and this creates opportunity for clonal expansion of a spontaneously occurring preneoplastic cell. If the wound-healing error model is correct, there must be a threshold dose range of radiation giving no increase in cancer risk. (author)

Dose rate effect on the yield of radiation induced response with thermal fading

International Nuclear Information System (INIS)

Chernov, V.; Rogalev, B.; Barboza-Flores, M.

2005-01-01

A model describing the dependences of the accumulation of thermally unstable radiation induced defects on the dose and dose rate is proposed. The model directly takes into account the track nature of the ionizing radiation represented as accumulation processes of defects in tracks averaged over a crystal volume considering various degrees of overlapping in space and time. The accumulation of the defects in the tracks is phenomenologically described. General expressions are obtained that allows radiation yield simulation of defects involving known creation and transformation processes. The cases considered, of linear accumulation (constant increment of the defects in tracks) and accumulation with saturation (complete saturation of the defects in one track), lead to a set of linear dose dependences with saturation, which are routinely used in luminescence and ESR dating. The accumulation, with increase of sensitivity in regions overlapped by two or more tracks, gave a set of dose dependences, from linear-sublinear-linear-saturation, distinctive of quartz up to linear-supralinear-linear-saturation. It is shown that the effect of the dose rate on dose dependences is determined by a dimensionless parameter a=Pτ/D0, where P is the dose rate, τ is the defect lifetime and D0 is the track dose. At a-bar 1 the dose rate influences basically the accumulation of thermally unstable defects. In the reverse case the dose dependences did not seems to be influenced by the dose rate

Process of defect formation in alkaline halogenides contaminated with Eu2+ induced by non ionizing radiation

International Nuclear Information System (INIS)

Pedroza M, M.; Melendrez, R.; Barboza F, M.; Castaneda, B.

2004-01-01

The creation of defects in polluted alkaline halogenides with divalent impurities exposed to ionizing radiation is explained by means of the creation of auto trapped excitons (STE), which can be formed by means of the excitement of the halogen ion or through the trapping of electrons in centers V K taken place during the process of ionization of the halogen ion. The luminescent recombination of the exciton auto trapped produces a characteristic exciton luminescence and the recombination non radiative causes the formation of the Frenkel type defects, even of centers F - H. Experimentally has been demonstrated that the same type of glasses, exposed to radiation non ionizing of the type UV of around 230 nm, they produce defects similar Frenkel. The situation is interesting all time that photons of 230 nm (5.3 eV) they cannot create excitons directly since they are in an energy level of approximately 2.4 inferior eV to the necessary energy for the production of the same ones. In order to investigating the type of process of creation of defects with UV light energy below the energy of the band prohibited in polluted alkaline halogenides with Eu 2+ , mainly looking for experimental information that allows to explain the creation of defects taken place by the radiation non ionizing, one carries out the present work. It was found that, independently of the energy of the radiation used for the excitement, the emission comes from the transition 4f 6 5d(t 2g )-4f 7 ( 8 S 7/2 ) of the ion Eu 2+ characterized by a wide band centered in 420 nm and an additional component in 460 nm of possibly intrinsic origin. It was determined that so much the F centers and F z participate in the thermoluminescent processes and of optically stimulated luminescence, achieving to identify those peaks of Tl strictly associated to the F centers (peak in 470 K for the KCl: Eu 2+ ) and F z (peak in 370 K). Also, by means of a process of selective photo stimulation evidence was obtained that the F

Destruction-polymerization transformations as a source of radiation-induced extended defects in chalcogenide glassy semiconductors

International Nuclear Information System (INIS)

Shpotyuk, Oleh; Filipecki, Jacek; Shpotyuk, Mykhaylo

2013-01-01

Long-wave shift of the optical transmission spectrum in the region of fundamental optical absorption edge is registered for As 2 S 3 chalcogenide glassy semiconductors after γ-irradiation. This effect is explained in the frameworks of the destruction-polymerization transformations concept by accepting the switching of the heteropolar As-S covalent bonds into homopolar As-As ones. It is assumed that (As 4 + ; S 1 - ) defect pairs are created under such switching. Formula to calculate content of the induced defects in chalcogenide glassy semiconductors is proposed. It is assumed that defects concentration depends on energy of broken covalent bond, bond-switching energy balance, correlation energy, optical band-gap and energy of excitation light. It is shown that theoretically calculated maximally possible content of radiation-induced defects in As 2 S 3 is about 1.6% while concentration of native defects is negligible. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Use of EMW radiation in the building industry at defects in buildings

Directory of Open Access Journals (Sweden)

Sobotka Jindřich

2017-01-01

Full Text Available This paper discusses theory and application of microwave radiation and experimental optimization of microwave radiation to eliminate moisture content in wood elements. It will be appreciated that the rising moisture leaking into the structure, resulting in defects and structures of the buildings themselves. Owing to its properties, microwave radiation has been used in the construction industry in modern times, in particular to dry wet masonry of buildings. Effects of electromagnetic radiation on building structures lead to relatively sharp decreases in moisture content from damp building structures or elements. The influence of electromagnetic radiation on building structures lead to oscillation of water molecules contained in the material, which cause a phase transformation of water into vapour. Consequently, the vapour evaporates from the moist material, thereby drying the element exposed to radiation. The article describes experiments carried out at the Faculty of Civil Engineering of the Faculty of Technology in Brno that demonstrate successful decrease of water content in building materials using microwave radiation. First, the understanding of microwave radiation will be discussed. Following an analysis of research results an optimum intensity of microwave radiation sources as well as the necessary length of the irradiation of microwave radiation have been determined with respect to the particular type of building material and the success rate of elimination of moisture.

Preferential repair of ionizing radiation-induced damage in the transcribed strand of an active human gene is defective in Cockayne syndrome

International Nuclear Information System (INIS)

Leadon, S.A.; Copper, P.K.

1993-01-01

Cells from patients with Cockayne syndrome (CS), which are sensitive to killing by UV although overall damage removal appears normal, are specifically defective in repair of UV damage in actively transcribe genes. Because several CS strains display cross-sensitivity to killing by ionizing radiation, the authors examined whether ionizing radiation-induced damage in active genes is preferentially repaired by normal cells and whether the radiosensitivity of CS cells can be explained by a defect in this process. They found that ionizing radiation-induced damage was repaired more rapidly in the transcriptionally active metallothionein IIA (MTIIA) gene than in the inactive MTIIB gene or in the genome overall in normal cells as a result of faster repair on the transcribed strand of MTIIA. Cells of the radiosensitive CS strain CS1AN are completely defective in this strand-selective repair of ionizing radiation-induced damage, although their overall repair rate appears normal. CS3BE cells, which are intermediate in radiosensitivity, do exhibit more rapid repair of the transcribed strand but at a reduced rate compared to normal cells. Xeroderma pigmentosum complementation group A cells, which are hypersensitive to UV light because of a defect in the nucleotide excision repair pathway but do not show increased sensitivity to ionizing radiation, preferentially repair ionizing radiation-induced damage on the transcribed strand of MTIIA. Thus, the ability to rapidly repair ionizing radiation-induced damage in actively transcribing genes correlates with cell survival. The results extend the generality of preferential repair in active genes to include damage other than bulky lesions

An investigation of the role of defect levels on the radiation response of synthetic diamond crystals when used as sensors for the detection of mammography X-rays.

Science.gov (United States)

Ade, Nicholas

2017-09-01

This study evaluates the role of defects on the performances of synthetic diamond sensors on exposure to mammography X-rays. Through systematic investigations, the main cause of instability of response of examined sensors necessitating pre-irradiation was isolated and ascribed to the presence of ambient light which has the effect of emptying shallow trapping levels. The changes in response between measurements in light and dark conditions varied from 2.8 ± 1.2% to 63.0 ± 0.3%. Sensitivities between 0.4 and 6.7nCGy -1 mm -3 determined for the sensors varied with defect levels. The study indicates that differences in crystal quality due to the presence and influence of defects would cause a discrepancy in the dosimetric performances of various diamond detectors. Once a sensor plate is selected (based on the influence of defect levels) and coupled to the probe housing with the response of the diamond sensor stabilised and appropriately shielded from ambient light, daily priming is not needed. Copyright © 2017 Elsevier Ltd. All rights reserved.

Annealing study on radiation-induced defects in 6H-SiC

International Nuclear Information System (INIS)

Pinheiro, M.V.B.; Lingner, T.; Caudepon, F.; Greulich-Weber, S.; Spaeth, J.M.

2004-01-01

We present the results of a systematic isochronal annealing investigation of vacancy-related defects in electron-irradiated n-type 6H-SiC:N. A series of 10 samples cut from a commercial wafer and annealed up to 1200 C after electron-irradiation (1.5 x 10 18 cm -3 ) was characterized with photoluminescence (PL), Magnetic circular dichroism of the absorption (MCDA) and conventional electron paramagnetic resonance (EPR). Apart from less stable triplet-related defects which vanished between 150 C and 300 C, the thermal behavior of three radiation-induced defects was studied: the silicon vacancy (V Si ), the carbon-antisite-carbon-vacancy pair (C Si -V C ) and the D1 center. Their annealing behavior showed that the destruction of the isolated V Si between 750 C and 900 C is followed by the formation of thermally more stable C Si -V C pairs, a result that has been theoretically predicted recently. By further heating the samples the C Si -V C pairs are annealed out between 900 C and 1050 C and were followed by an increase in the D1 center concentration. (orig.)

Non-stoichiometry Defects and Radiation Hardness of Lead Tungstate Crystals PbWO4

CERN Document Server

Devitsin, E G; Kozlov, V A; Nefedov, L; Polyansky, E V; Potashov, S Yu; Terkulov, A R; Zadneprovski, B I

2001-01-01

It has been stated many times that the formation of radiation infringements in PbWO4 is to big extent stipulated by non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of non-stoichiometry defects and their effect on the radiation hardness of PbWO4 the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation (137Cs source). In the optical transmission measurements along with traditional techniques a method "in situ" was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO4 melt has found PbWO4 phase in their content as well as compounds rich in lead, PbO, Pb2WO5, with overall ratio Pb/W = 3.2. Correspondingly the lack of lead and variations in th...

Investigation of anisotropy in EPR spectra of radiation defects in irradiated beryllium ceramics

International Nuclear Information System (INIS)

Polyakov, A.I.; Ryabikin, Yu.A.; Zashkvara, O. V.; Bitenbaev, M.I.; Petukhov, Yu. V.

2004-01-01

Full text: In this work results of analysis of anisotropy and hyperfine structure in EPR spectra of paramagnetic defects in irradiated samples of beryllium ceramics are presented. To explain peculiarities in a shape and parameters of the EPR spectrum hyperfine structure in beryllium ceramics, we have analyzed several versions of model representations for the radiation-induced paramagnetic defects uniformly distributed in a sample as well as for cluster defects which hyperfine structure is determined by interactions between electrons and nuclei of impurity atoms (S=1/2) and which are characterized by anisotropy in the g factors. Calculations of a shape of the uniformly widened EPR spectra are carried out by the model of random interactions between electron spins. The EPR spectra, widened at the expense of anisotropy in the g factors, are calculated by the following equation: g(Δ)=[2(ω-ω 0 )+α] -1/2 , where ω 0 =γH 0 , α is the quantify proportional to the anisotropy shift. To describe wings of spectral lines, where the equation doesn't work, we use the Gaussian function. To determine the frequency of precession of electron spins packages with local concentration N loc , the following expression is used: ω=ω 0 +1/2α(3cos 2 θ-1), where θ is an angle between the symmetry axis and the direction of the external magnetic field. It is shown that the best agreement between the calculated and experimental EPR spectra is observed with the following computational model: paramagnetic radiation defects are distributed uniformly over a ceramics sample, and the g factors of its EPR spectra have the anisotropy typical for dipole-dipole interaction in powder samples. By results of the data we obtained, it's clear that in future we'll need in more detailed information than that published in scientific journals about formation of the paramagnetic defect EPR spectra structure in beryllium oxides and ceramics at the expense of resonance line hyperfine splitting on atoms of

Investigation of anisotropy in EPR spectra of radiation defects in irradiated beryllium ceramics

Energy Technology Data Exchange (ETDEWEB)

Polyakov, A I; Ryabikin, Yu A; Zashkvara, O V; Bitenbaev, M I; Petukhov, Yu V [Inst. of Physics and Technology, Almaty (Kazakhstan)

2004-07-01

Full text: In this work results of analysis of anisotropy and hyperfine structure in EPR spectra of paramagnetic defects in irradiated samples of beryllium ceramics are presented. To explain peculiarities in a shape and parameters of the EPR spectrum hyperfine structure in beryllium ceramics, we have analyzed several versions of model representations for the radiation-induced paramagnetic defects uniformly distributed in a sample as well as for cluster defects which hyperfine structure is determined by interactions between electrons and nuclei of impurity atoms (S=1/2) and which are characterized by anisotropy in the g factors. Calculations of a shape of the uniformly widened EPR spectra are carried out by the model of random interactions between electron spins. The EPR spectra, widened at the expense of anisotropy in the g factors, are calculated by the following equation: g({delta})=[2({omega}-{omega}{sub 0})+{alpha}]{sup -1/2}, where {omega}{sub 0}={gamma}H{sub 0}, {alpha} is the quantify proportional to the anisotropy shift. To describe wings of spectral lines, where the equation doesn't work, we use the Gaussian function. To determine the frequency of precession of electron spins packages with local concentration N{sub loc}, the following expression is used: {omega}={omega}{sub 0}+1/2{alpha}(3cos{sup 2}{theta}-1), where {theta} is an angle between the symmetry axis and the direction of the external magnetic field. It is shown that the best agreement between the calculated and experimental EPR spectra is observed with the following computational model: paramagnetic radiation defects are distributed uniformly over a ceramics sample, and the g factors of its EPR spectra have the anisotropy typical for dipole-dipole interaction in powder samples. By results of the data we obtained, it's clear that in future we'll need in more detailed information than that published in scientific journals about formation of the paramagnetic defect EPR spectra structure in

Synergistic effects of interstitial impurities and radiation defects on mechanical characteristics of ferritic steels

International Nuclear Information System (INIS)

Charit, I.; Seok, C.S.; Murty, K.L.

2007-01-01

Ferritic steels are generally used in pressure vessels and various reactor support structures in light water reactors. They are known to exhibit radiation embrittlement in terms of decreased toughness and increased ductile-brittle transition temperature as a result of exposure to neutron radiation. The superimposed effects of strain aging due to interstitial impurity atoms on radiation embrittlement were considered first by Wechsler, Hall and others. Here we summarize some of our efforts on the investigation of synergistic effects between interstitial impurity atoms (IIAs) and radiation-induced point defects, which result in interesting effects at appropriate temperature and strain rate conditions. Two materials, a mild steel and a pressure vessel steel (A516 Gr.70), are evaluated using tensile and three-point bend tests

New fundamental defects in a-SiO2

International Nuclear Information System (INIS)

Karna, S.P.; Kurtz, H.A.; Shedd, W.M.; Pugh, R.D.; Singaraju, B.K.

1999-01-01

Throughout the three decades of research into radiation-induced degradation of metal-oxide-semiconductor (MOS) devices, investigators understood that point defects in the Si-SiO 2 structure (localized deviations from stoichiometrically pure Si and SiO 2 ) are responsible for many observed anomalies. Basic research in this area has progressed along two tracks: (i) differentiating the anomalies based upon subtle differences in their characteristic behavior, and (ii) precise description of the defects responsible for the anomalous behavior. These two research tracks are complementary since often a discovery in one area provides insight and ultimately leads to discoveries in the other. Here, the atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral trivalent silicon centers in the oxide. One of the defects, the X-center, is determined to have an O 2 Sitriple b ondSi ↑ atomic structure. The other defect, called the Y-center, is found to have an OSi 2 triple b ondSi ↑ structure. Calculated electronic and electrical properties of the new defect centers are consistent with the published characteristics of the oxide switching trap or border trap precursors

The radiation response of human dermal fibroblasts

Science.gov (United States)

Mitchell, Stephen Andrew

A clinically reliable predictive assay based on normal-tissue radiosensitivity may lead to improved tumour control through individualised dose prescriptions. In-vitro fibroblast radiosensitivity has been shown, in several studies, to correlate with late radiation morbidity. The aim of this study was to investigate some of the cellular mechanisms underlying the normal-tissue response. In this study, seventeen primary fibroblast strains were established by enzymatic disaggregation of skin biopsies obtained from patients. These comprised seven who experienced acute tissue reactions to radiotherapy, four patients with a normal response and six non-cancer volunteers. An AT cell line was included as a positive control for radiosensitivity. In-vitro radiosensitivity was measured using a clonogenic assay at both high (HDR: 1.6 Gymin-1) and low dose rate (LDR: 0.01 Gymin-1). The radiation parameter HDR SF2 was the most sensitive in discriminating the seven sensitive patients from the remaining ten normal patients (range 0.11-0.19 sensitive patients compared with 0.17-0.34 control patients: puse of an internal control or LDR radiation protocol increased this discrimination. Pulsed-field gel electrophoresis (PFGE) was used to measure the level of initial and residual double-strand breaks following irradiation. No correlation was found between HDR SF2 and initial DNA damage. However, a strong correlation was found between clonogenic survival and both residual DNA damage (measured over 10-70 Gy, allowing 4 h repair, correlation coefficient: 0.90, <0.0001) and the ratio of residual/initial DNA damage, with the sensitive cell lines generally showing a higher level of residual DNA damage. Cell-cycle delays were found in all 18 cell strains in response to 2 Gy irradiation, but were not found to discriminate between sensitive and normal patients. Associated studies found no mutations of the ATM gene in the five radiosensitive patients studied. However, a coding sequence alteration

Interaction between radiation-induced defects and lithium impurity atoms in germanium

International Nuclear Information System (INIS)

Vasil'eva, E.D.; Daluda, Yu.N.; Emtsev, V.V.; Kervalishvili, P.D.; Mashovets, T.V.

1981-01-01

The effect of gamma radiation on germanium doped with lithium in the course of extraction from a melt was studied. 60 Co γ-ray irradiation with the 6.2x10 12 cm -2 x1 -1 intensity was performed at 300 K. The temperature dependences of conductivity and Hall effect was studied in the 4.2-300 K range. It was shown that using this alloying technique lithium atoms in germanium were in a ''free'' state. It was found that on irradiation the lithium atom concentration decreases as a result of production of electrically inactive complexes with participation of lithium atoms. Besides this principal process secondary ones are observed: production of radiation donor-defects with the ionization energy Esub(c) of 80 MeV and compensating acceptors

The Effect of Grain Size on the Radiation Response of Silicon Carbide and its Dependence on Irradiation Species and Temperature

Science.gov (United States)

Jamison, Laura

In recent years the push for green energy sources has intensified, and as part of that effort accident tolerant and more efficient nuclear reactors have been designed. These reactors demand exceptional material performance, as they call for higher temperatures and doses. Silicon carbide (SiC) is a strong candidate material for many of these designs due to its low neutron cross-section, chemical stability, and high temperature resistance. The possibility of improving the radiation resistance of SiC by reducing the grain size (thus increasing the sink density) is explored in this work. In-situ electron irradiation and Kr ion irradiation was utilized to explore the radiation resistance of nanocrystalline SiC (nc-SiC), SiC nanopowders, and microcrystalline SiC. Electron irradiation simplifies the experimental results, as only isolated Frenkel pairs are produced so any observed differences are simply due to point defect interactions with the original microstructure. Kr ion irradiation simulates neutron damage, as large radiation cascades with a high concentration of point defects are produced. Kr irradiation studies found that radiation resistance decreased with particle size reduction and grain refinement (comparing nc-SiC and microcrystalline SiC). This suggests that an interface-dependent amorphization mechanism is active in SiC, suggested to be interstitial starvation. However, under electron irradiation it was found that nc-SiC had improved radiation resistance compared to single crystal SiC. This was found to be due to several factors including increased sink density and strength and the presence of stacking faults. The stacking faults were found to improve radiation response by lowering critical energy barriers. The change in radiation response between the electron and Kr ion irradiations is hypothesized to be due to either the change in ion type (potential change in amorphization mechanism) or a change in temperature (at the higher temperatures of the Kr ion

Radiation effects on erbium doped optical fibers: on the influence of the fiber composition

International Nuclear Information System (INIS)

Tortech, B.

2008-01-01

We have studied the erbium-doped fibers (EDF) sensitivity under irradiation and the induced defects. The first chapter presents the state of the art for the EDF under irradiation as well as some radiation generated silica defects. The second chapter details the radiations used in this thesis and the experimental set-ups implemented for the characterization of the fiber responses under irradiation and the radiation induced defects. In the third chapter, we present the response of several erbium-doped fibers irradiated with γ-rays, protons and pulsed X-rays. The erbium doped fibers have higher radiation induced sensitivity than the Telecom fibers (SMF28) or than erbium-doped fibers containing little aluminum. The aluminum presence in the EDF core composition is mainly responsible for the fiber performance degradation. Whatever the irradiation types, the radiation generated defects are related to the host matrix. Our studies also display that the erbium ions are only affected by the interaction with the created defects. The fourth chapter deals with the EDF under UV exposure and shows that the UV rays lead to the same effects than the gamma rays. The last chapter of this thesis presents the study of optical fiber amplifiers under γ irradiation. (author)

Programmed cellular response to ionizing radiation damage

International Nuclear Information System (INIS)

Crompton, N.E.A.

1998-01-01

Three forms of radiation response were investigated to evaluate the hypothesis that cellular radiation response is the result of active molecular signaling and not simply a passive physicochemical process. The decision whether or not a cell should respond to radiation-induced damage either by induction of rescue systems, e.g. mobilization of repair proteins, or induction of suicide mechanisms, e.g. programmed cell death, appears to be the expression of intricate cellular biochemistry. A cell must recognize damage in its genetic material and then activate the appropriate responses. Cell type is important; the response of a fibroblast to radiation damage is both quantitatively and qualitatively different form that of a lymphocyte. The programmed component of radiation response is significant in radiation oncology and predicted to create unique opportunities for enhanced treatment success. (orig.)

Study of correlation between the structural defects and inhomogeneities of CDTE based radiation detectors used for medical imaging

International Nuclear Information System (INIS)

Buis, Camille

2013-01-01

In the present Ph.D. thesis, we investigate microstructural defects in a chlorine-doped cadmium telluride crystal (CdTe:Cl), to understand the relationship between defects and performance of CdTe-based radiation detectors. Characterization tools, such as diffraction topography and chemical etching, are used for bulk and surface investigations of the distribution of dislocations. Dislocations are arranged into walls. Most of them appear to cross the whole thickness of the sample. Very good correlation is observed between areas with variations of dark-current and photo-current, and positions of the dislocation walls revealed at the surface of the sample. Then spectroscopic analysis of these defects was performed at low temperatures. It highlighted that dislocation walls induce non-radiative recombination, but it didn't show any Y luminescence usually attributed to dislocations in the literature. Ion Beam Induced Current (IBIC) measurements were used to evaluate the influence of dislocation walls on charge carrier transport properties. This experiment shows that they reduce the mobility-lifetime product of the charge carriers. A very clear correlation was, in fact, established between the distribution of the dislocation network and the linear defects revealed by their lower CIE on the device. (author) [fr

Electron paramagnetic resonance study on the ionizing radiation induced defects of the tooth enamel hydroxyapatite

International Nuclear Information System (INIS)

Oliveira, Liana Macedo de

1995-01-01

Hydroxyapatite is the main constituent of calcified tissues. Defects induced by ionizing radiations in this biomineral can present high stability and then, these are used as biological markers in radiological accidents, irradiated food identifying and geological and archaeological dating. In this work, paramagnetic centers induced on the enamel of the teeth by environmental ionizing radiation, are investigated by electron paramagnetic resonance (EPR). Decay thermal kinetic presents high complexity and shows the formation of different electron ligation energy centers and structures

Non-stoichiometry defects and radiation hardness of lead tungstate crystals PbWO sub 4

CERN Document Server

Devitsin, E G; Potashov, S Yu; Terkulov, A R; Nefedov, V A; Polyansky, E V; Zadneprovski, B I; Kjellberg, P; Korbel, V

2002-01-01

It has been stated many times that the formation of radiation infringements in PbWO sub 4 is to a big extent stipulated by the non-stoichiometry defects of the crystals, arising in the process of their growth and annealing. To refine the idea of characteristics of the non-stoichiometry defects and their effect on the radiation hardness of PbWO sub 4 , the current study is aimed at the melt composition infringements during its evaporation and at optical transmission of crystals obtained in these conditions after their irradiation ( sup 1 sup 3 sup 7 Cs source). In the optical transmission measurements along with traditional techniques a method 'in situ' was used, which provided the measurements in fixed points of the spectrum (380, 470 and 535 nm) directly in the process of the irradiation. X-ray phase and fluorescence analysis of condensation products of vapours over PbWO sub 4 melt has found PbWO sub 4 phase in their content as well as compounds rich in lead PbO, Pb sub 2 WO sub 5 with overall ratio Pb/W (3....

Semiconductors Under Ion Radiation: Ultrafast Electron-Ion Dynamics in Perfect Crystals and the Effect of Defects

Science.gov (United States)

Lee, Cheng-Wei; Schleife, André

Stability and safety issues have been challenging difficulties for materials and devices under radiation such as solar panels in outer space. On the other hand, radiation can be utilized to modify materials and increase their performance via focused-ion beam patterning at nano-scale. In order to grasp the underlying processes, further understanding of the radiation-material and radiation-defect interactions is required and inevitably involves the electron-ion dynamics that was traditionally hard to capture. By applying Ehrenfest dynamics based on time-dependent density functional theory, we have been able to perform real-time simulation of electron-ion dynamics in MgO and InP/GaP. By simulating a high-energy proton penetrating the material, the energy gain of electronic system can be interpreted as electronic stopping power and the result is compared to existing data. We also study electronic stopping in the vicinity of defects: for both oxygen vacancy in MgO and interface of InP/GaP superlattice, electronic stopping shows strong dependence on the velocity of the proton. To study the energy transfer from electronic system to lattice, simulations of about 100 femto-seconds are performed and we analyze the difference between Ehrenfest and Born-Oppenheimer molecular dynamics.

Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Sopko, V. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Sopko, B., E-mail: bruno.sopko@cern.ch [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Faculty of Production Technology and Management, J. E. Purkyně Univerzity in Ústí nad Labem, Na Okraji 1001, 400 01 Ústí nad Labem (Czech Republic); Chren, D. [Department of Physics, Faculty of Mechanical Engineering, Czech Technical University in Prague, Technicka 4, CZ 16000 Prague 6 (Czech Republic); Dammer, J. [Hospital Na Bulovce, Department of Radiological Physics, Budinova 2, CZ-18081 Prague 8 (Czech Republic); Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, CZ 12800 Prague 2 (Czech Republic); Charles University in Prague, First Faculty of Medicine, Salmovská 1,CZ-12000 Prague 2 (Czech Republic)

2013-12-01

Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 MGy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the dose of gamma radiation. The results are compared with earlier published data. Highlights: •We have studied Si PIN diode dosimeters irradiated by gamma. •We measured DLTS spectra and calculated energy traps caused by gamma irradiation. •Increasing dose caused creation of new traps and disappearance of others.

Radiation defects in lithium salts of normal oxyacids of the sixth B subgroup elements. [Gamma radiation

Energy Technology Data Exchange (ETDEWEB)

Kurilenko, L.N.; Saunin, E.I.; Gromov, V.V.

1984-05-01

EPR and thermoluminescence methods are used to investigate radiation defects in the series of compounds Li/sub 2/ElO/sub 4/(El=W, Mo, Cr) belonging to the structural type of phenacite. The example of polycrystalline Li/sub 2/WO/sub 4/ of hexagonal modification is used to show that three-axis anisotropic signal (g/sub 1/=1.997, g/sub 2/=2.007, g/sub 3/=2.023) observed after effect of ..gamma..-quanta and completely disappearing at 570 K is conditioned by preliminary localization of the hole on oxygen of octahedral mononuclear groupings of admixture cubic phases, i.e. defects of WO/sub 6//sup 5 -/ type. Li/sub 2/WO/sub 4/ of cubic modification is the main impurity. Thermal stability of WO/sub 6//sup 5 -/ defects is much higher than stability of proper tetrahedral hole centres. Mo admixture does not make a noticeable contribution to the stabilization of high-temperature hole centres in Li/sub 2/WO/sub 4/ simultaneously changing localization conditions for electrons and holes in the range of low temperatures. It is shown that Li/sub 2/MoO/sub 4/ and Li/sub 2/CrO/sub 4/ radiolysis occurs analogously to Li/sub 2/WO/sub 4/ radiolysis, but stabilization conditions of defects observed are different. It is found that thermal stability of hole paramagnetic centres of the ElO/sub 6//sup 5 -/ type correlates with ..delta..H/sub 298//sup 0/ values formation heat of compounds studied, and energy characteristics of electron paramagnetic centres of the ElO/sub 4//sup 3 -/ type change according to the values of ionization potential of El/sup 5 +/ ions.

Abnormal photothermal effect of laser radiation on highly defect oxide bronze nanoparticles under the sub-threshold excitation of absorption

Science.gov (United States)

Gulyaev, P.; Kotvanova, M.; Omelchenko, A.

2017-05-01

The mechanism of abnormal photo-thermal effect of laser radiation on nanoparticles of oxide bronzes has been proposed in this paper. The basic features of the observed effect are: a) sub-threshold absorption of laser radiation by the excitation of donor-like levels formed in the energy gap due to superficial defects of the oxide bronze nano-crystals; b) an interband radiationless transition of energy of excitation on deep triplet levels and c) consequent recombination occurring at the plasmon absorption. K or Na atoms thermally intercalated to the octahedral crystal structure of TiO2 in the wave SHS combustion generate acceptor levels in the gap. The prepared oxide bronzes of the non-stoichiometric composition NaxTiO2 and KxTiO2 were examined by high resolution TEM, and then grinded in a planetary mill with powerful dispersion energy density up to 4000 J/g. This made it possible to obtain nanoparticles about 50 nm with high surface defect density (1017-1019 cm-2 at a depth of 10 nm). High photo-thermal effect of laser radiation on the defect nanocrystals observed after its impregnation into cartilaginous tissue exceeds 7 times in comparison with the intact ones.

Electric field deformation in diamond sensors induced by radiation defects

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

2016-07-01

The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

Science.gov (United States)

Lordi, Vincenzo

2013-03-01

The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

Defect kinetics and resistance to amorphization in zirconium carbide

International Nuclear Information System (INIS)

Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

2015-01-01

To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material

Intrinsic and extrinsic contributors to defective CD8+ T cell responses with aging.

Science.gov (United States)

Jergović, Mladen; Smithey, Megan J; Nikolich-Žugich, Janko

2018-05-01

Aging has a profound effect on the immune system, and both innate and adaptive arms of the immune system show functional decline with age. In response to infection with intracellular microorganisms, old animals mobilize decreased numbers of antigen-specific CD8+ T cells with reduced production of effector molecules and impaired cytolytic activity. However, the CD8+ T cell-intrinsic contribution to, and molecular mechanisms behind, these defects remain unclear. In this review we will discuss the mechanistic contributions of age related changes in the CD8+ T cell pool and the relative roles of intrinsic functional defects in aged CD8+ T cells vs. defects in the aged environment initiating the CD8+ T cell response. Copyright © 2018 Elsevier Inc. All rights reserved.

Use of Isobestic and Isoemission Points in Absorption and Luminescence Spectra for Study of the Transformation of Radiation Defects in Lithium Fluoride

Science.gov (United States)

Voitovich, A. P.; Kalinov, V. S.; Stupak, A. P.; Runets, L. P.

2015-03-01

Isobestic and isoemission points are recorded in the combined absorption and luminescence spectra of two types of radiation defects involved in complex processes consisting of several simultaneous parallel and sequential reactions. These points are observed if a constant sum of two terms, each formed by the product of the concentration of the corresponding defect and a characteristic integral coefficient associated with it, is conserved. The complicated processes involved in the transformation of radiation defects in lithium fluoride are studied using these points. It is found that the ratio of the changes in the concentrations of one of the components and the reaction product remains constant in the course of several simultaneous reactions.

Impurity-related point defects and gamma-radiation response of massive quartz from the Borborema pegmatite province, in Brazil

International Nuclear Information System (INIS)

Miranda, Milena Ribas de; Gonzaga, Raysa Sthefany Gomes; Guzzo, Pedro Luiz; Barreto, Sandra de Brito; Melgarejo, Joan Carles

2012-01-01

This work has investigated the changes induced by γ-radiation on impurity-related point defects in massive rose quartz from one deposit located at The Borborema Pegmatite Province (Northeast Region, in Brazil). Samples extracted from rose and colorless (milky) quartz blocks were irradiated with doses of 60 Co, from 0.5 to 96 kGy. Point defects related to Al, Ge, Li and OH were measured by optical, infrared, and electron paramagnetic resonance spectroscopy, prior and after irradiation. The contents of Al, Li, Ge, Fe, Ti and other impurities were measured by inductively-coupled plasma mass spectrometry in quartz fragments exhibiting rose, pale-rose, and milky colorations. It was found that [AlO 4 ] 0 , [AlO 4 /H] 0 and [GeO 4 /Li] 0 were generated by the dissociation of [AlO 4 /Li] 0 and [Li-OH] centers with doses as lower as 0.5 kGy. Above 8 kGy, the electron paramagnetic resonance signal related to [GeO 4 /Li] 0 decreases due to the intense mobility of Li species throughout the quartz lattice, giving rise to E' 1 centers perturbed by Ge. The increase in [AlO 4 ] 0 content with γ doses and the consequent rise in the intensity of smoky color were similar for both rose and colorless quartz. Scanning electron microscopy carried out in insoluble residues obtained after chemical dissolution of each type of quartz revealed the presence of nanometric fibers only in rose specimens. These results suggested that the cause of rose color in massive quartz from Borborema Pegmatite Province is probably related to the presence of dumortierite inclusions. (author)

Extrinsic- and intrinsic-defect creation in amorphous SiO2

International Nuclear Information System (INIS)

Devine, R.A.B.; Francou, J.

1990-01-01

We have studied the creation efficiency of various intrinsic and extrinsic defects in high-[OH] amorphous silica subjected to the ultraviolet emission from an O 2 plasma or 60 Co γ-ray radiation. Both oxygen-vacancy- and nitrogen-related defects are observed following γ-ray irradiation or ultraviolet exposure. The wavelength range responsible for defect creation is estimated to be 200 approx-lt λ approx-lt 300 nm (4 approx-lt E photon approx-lt 5.9 eV). The ultraviolet power output of the plasma estimated by comparing defect yields with those from a Hg lamp (λ=185 and 254 nm) suggests 200 approx-lt P approx-lt 900 mW cm -2 for a plasma power density ∼300 mW cm -3 . Nonbridging oxygen-hole centers and hydrogen-related defect centers as well as methyl radical (CH 3 . ) defects are observed after γ-ray irradiation but not after ultraviolet exposure. The efficiency of creation of the various defects is material dependent

Electric field effects on radiation defects annealing in p-InP

International Nuclear Information System (INIS)

Sibille, A.

1983-01-01

Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Balogh, A.G.; Mascher, P.

2001-01-01

In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Brunner, S.; Puff, W. [Technische Univ. Graz (Austria). Inst. fuer Technische Physik; Balogh, A.G. [Technische Hochschule Darmstadt (Germany). FB Materialwissenschaft; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Engineering Physics

2001-07-01

In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

Defects of a mammography quality control phantom visualized by synchrotron radiation imaging

International Nuclear Information System (INIS)

Imamura, Keiko; Fukuda, Mamoru; Ehara, Norishige; Miyamoto, Keiko; Kanemaki, Yoshihide; Ogata, Haruki; Nakajima, Yasuo

2002-01-01

Synchrotron radiation (SR) imaging of an RMI 156 mammography quality control phantom, serial number 156-15330, revealed some defects which degraded the visibility of calcification specks. SR imaging was performed at SPring-8, in Harima, Japan by using a monochromatic energy of 20 keV with a field-of-view of 24 X 24 mm. Different kinds of images were obtained by changing sample-to-detector distances; absorption images and refraction-enhanced images. Specks were embedded in a wax matrix and were imaged as black in an absorption image. In a refraction-enhanced image, they were imaged as a black region with white margins. Foreign objects with opposite contrast were detected near, or overlapped with, some specks. As they were depicted as white in the absorption image and as white with a black margin in the refraction-enhanced image, it seemed that they had low X-ray attenuation and a low refraction index compared with the surrounding wax. They might presumable be air bubbles. Visibility of specks in an absorption image was seriously interfered with when those object(s) overlapped with specks. This kind of defect may cause a difficulty in meeting quality assurance specifications when a facility inadvertently purchases defective phantoms. (author)

Effect of thermal treatment on the density of radiation-induced defects in dielectrics and on the semiconductor surface of silicon MDS structures

International Nuclear Information System (INIS)

Daliev, Kh.S.; Lebedev, A.A.; Ehkke, V.; 3425000DD)

1987-01-01

Isochronous annealing of radiation defects formed under MIS structure irradiation by γ-quanta at the presence of shift stress on a metal electrode is studied. Complex measurements of non-stationary capacitance spectroscopy and volt-farad characteristics (VFC) have shown that a built-in charge and volumetric states (VS) of the dielectric are annealed at 250 deg C, fast surface states (SS) - at 350 deg C, and the characteristic radiation defect in the Si-SiO 2 transition layer is completely annealed only at 400 deg C. Additional VS and SS occurring in the structures at positive shift on the metal electrode under radiation are annealed at 120 deg C, the kinetics of defect annealing at higher temperatures is independent from shift polarity. SS density calculated by VFC is determined in reality by recharging not only SS but some VS of the dielectric in the range of width of the order of 3.5 nm from the surface of the semiconductor

Effects of impurities on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.

1986-01-01

Strong impurity effects upon introduction and annealing behavior of radiation-induced defects in InP irradiated with 1-MeV electrons have been found. The main defect center of 0.37-eV hole trap H4 in p-InP, which must be due to a point defect, is annealed even at room temperature. Its annealing rate is found to be proportional to the 2/3 power of the preirradiation carrier concentration in InP. Moreover, the density of the hole trap H5 (E/sub v/+0.52 eV) in p-InP, which must be due to a point defect--impurity complex, increases with increase in the InP carrier concentration. These results suggest that the radiation-induced defects in InP must recover through long-range diffusion mediated by impurity atoms. A model is proposed in which point defects diffuse to sinks through impurities so as to disappear or bind impurities so as to form point defect--impurity complexes. In addition to the long-range diffusion mechanism, the possibility of charge-state effects responsible for the thermal annealing of radiation-induced defects in InP is also discussed

Radiofrequency electromagnetic radiation from cell phone causes defective testicular function in male Wistar rats.

Science.gov (United States)

Oyewopo, A O; Olaniyi, S K; Oyewopo, C I; Jimoh, A T

2017-12-01

Cell phones have become an integral part of everyday life. As cell phone usage has become more widespread, concerns have increased regarding the harmful effects of radiofrequency electromagnetic radiation from these devices. The current study was undertaken to investigate the effects of the emitted radiation by cell phones on testicular histomorphometry and biochemical analyses. Adult male Wistar rats weighing 180-200 g were randomly allotted to control, group A (switched off mode exposure), group B (1-hr exposure), group C (2-hr exposure) and group D (3-hr exposure). The animals were exposed to radiofrequency electromagnetic radiation of cell phone for a period of 28 days. Histomorphometry, biochemical and histological investigations were carried out. The histomorphometric parameters showed no significant change (p electromagnetic radiation of cell phone leads to defective testicular function that is associated with increased oxidative stress and decreased gonadotropic hormonal profile. © 2017 Blackwell Verlag GmbH.

Systematic Analysis of the DNA Damage Response Network in Telomere Defective Budding Yeast

Directory of Open Access Journals (Sweden)

Eva-Maria Holstein

2017-07-01

Full Text Available Functional telomeres are critically important to eukaryotic genetic stability. Scores of proteins and pathways are known to affect telomere function. Here, we report a series of related genome-wide genetic interaction screens performed on budding yeast cells with acute or chronic telomere defects. Genetic interactions were examined in cells defective in Cdc13 and Stn1, affecting two components of CST, a single stranded DNA (ssDNA binding complex that binds telomeric DNA. For comparison, genetic interactions were also examined in cells with defects in Rfa3, affecting the major ssDNA binding protein, RPA, which has overlapping functions with CST at telomeres. In more complex experiments, genetic interactions were measured in cells lacking EXO1 or RAD9, affecting different aspects of the DNA damage response, and containing a cdc13-1 induced telomere defect. Comparing fitness profiles across these data sets helps build a picture of the specific responses to different types of dysfunctional telomeres. The experiments show that each context reveals different genetic interactions, consistent with the idea that each genetic defect causes distinct molecular defects. To help others engage with the large volumes of data, the data are made available via two interactive web-based tools: Profilyzer and DIXY. One particularly striking genetic interaction observed was that the chk1∆ mutation improved fitness of cdc13-1 exo1∆ cells more than other checkpoint mutations (ddc1∆, rad9∆, rad17∆, and rad24∆, whereas, in cdc13-1 cells, the effects of all checkpoint mutations were similar. We show that this can be explained by Chk1 stimulating resection—a new function for Chk1 in the eukaryotic DNA damage response network.

Electron radiation defects in TaCsub(1-x) and TiCsub(0.97)

International Nuclear Information System (INIS)

Morillo, J.; Novion, C.H. de; Dural, J.

1981-08-01

The electrical resistivity changes of TaCsub(0.99) and TaCsub(0.80) have been measured at 21 K during irradiation with electrons of incident energies ranging from 2.5 to 0.25 MeV: a non-zero production rate is observed, even at the lowest energies. The recovery of defects was followed up to 400 K for TaCsub(0.99) and TiCsub(0.97) irradiated with 2.25 MeV electrons and up to 160 K for TaCsub(0.80) irradiated with 0.75 MeV electrons. The results are compared to fast neutron radiation damage data. For TiCsub(0.97) and TaCsub(0.99), the contributions of the different defects to the production rates and recovery spectra are tentatively separated, and a rough estimate of Frenkel pair resistivities is given

AFM studies of a new type of radiation defect on mica surfaces caused by highly charged ion impact

International Nuclear Information System (INIS)

Ruehlicke, C.; Briere, M.A.; Schneider, D.

1994-01-01

Radiation induced defects on mica caused by the impact of slow very highly charged ions (SVHCI) have been investigated with an atomic force microscope (AFM). Freshly cleaved surfaces of different types of muscovite were irradiated with SVHCI extracted from the LLNL electron beam ion trap (EBIT) at velocities of ca. 2 keV/amu. Atomic force microscopy of the surface reveals the formation of blisterlike defects associated with single ion impact. The determined defect volume which appears to increase linearly with the incident charge state and exhibits a threshold incident charge state has been determined using the AFM. These results indicate that target atoms are subjected to mutual electrostatic repulsion due to ionization through potential electron emission upon approach of the ion. If the repulsion leads to permanent atomic displacement, surface defects are formed

The octadecanoid signalling pathway in plants mediates a response to ultraviolet radiation

International Nuclear Information System (INIS)

Conconi, A.; Smerdon, M.J.; Howe, G.A.; Ryan, C.A.

1996-01-01

Many plant genes that respond to environmental and developmental changes are regulated by jasmonic acid, which is derived from linolenic acid via the octadecanoid pathway. Linolenic acid is an important fatty-acid constituent of membranes in most plant species and its intracellular levels increase in response to certain signals. Here we report that irradiation of tomato leaves with ultraviolet light induces the expression of several plant defensive genes that are normally activated through the octadecanoid pathway after wounding. The response to ultraviolet light is blocked by an inhibitor of the octadecanoid pathway and it does not occur in a tomato mutant defective in this pathway. The ultraviolet irradiation maximally induces the defence genes at levels where cyclobutane pyrimidine dimer formation, an indicator of DNA damage, is less than 0.2 dimers per gene. Our evidence indicates that this plant defence response to certain wavelengths of ultraviolet radiation requires the activation of the octadecanoid defence signalling pathway. (author)

Study of defects and radiation damage in solids by field-ion and atom-probe microscopy

International Nuclear Information System (INIS)

Seidman, D.N.

1979-06-01

A brief review is presented of: the basic physical principles of the field-ion and atom-probe microscopes; the many applications of these instruments to the study of defects and radiation damage in solids; and the application of the atom-probe field-ion microscope to the study of the behavior of implanted 3 He and 4 He in tungsten

Study of EUV induced defects on few-layer graphene

NARCIS (Netherlands)

Gao, An; Rizo, P.J.; Zoethout, E.; Scaccabarozzi, L.; Lee, Christopher James; Banine, V.; Bijkerk, Frederik

2012-01-01

Defects in graphene greatly affect its properties1-3. Radiation induced-defects may reduce the long-term survivability of graphene-based nano-devices. Here, we expose few-layer graphene to extreme ultraviolet (EUV, 13.5nm) radiation and show there is a power-dependent increase in defect density. We

Radiation protection - radiographer's role and responsibilities

International Nuclear Information System (INIS)

Popli, P.K.

2002-01-01

Ever since discovery of x-rays, radiographers has been the prime user of radiation. With the passage of time, the harmful effects of radiation were detected. Some of radiographers, radiologists and public were affected by radiation, but today with enough knowledge of radiation, the prime responsibility of radiation protection lies with the radiographers only. The radiologist and physicist are also associated with radiation protection to some extent

Radiation emergency response in Illinois, Alabama, and Texas

International Nuclear Information System (INIS)

Larsen, D.K.; Chester, R.O.

1978-03-01

The objective of this study was to examine state radiation emergency response and to locate any areas of emergency planning in need of improvement. This report briefly presents a summary of laws and defining documents governing radiation emergency response, describes the existing and projected need for such response, and presents the authors' analyses of the evolution of state response plans and their application to radiation incidents. Three states' programs are discussed in detail: Illinois, Alabama, and Texas. These states were selected because they have quite different emergency-response programs. Therefore, these state programs provide a wide variety of approaches to state radiation emergency response

Medical response to effects of ionising radiation

International Nuclear Information System (INIS)

Crosbie, W.A.; Gittus, J.H.

1989-01-01

The proceedings of a conference on 'Medical Response to Effects of Ionising Radiation' in 1989 in the form of nineteen papers published as a book. Topics discussed include radiation accidents at nuclear facilities, the medical management of radiation casualties, the responsibilities, plans and resources for coping with a nuclear accident and finally the long term effects of radiation, including leukaemia epidemiology studies. All papers were selected and indexed separately. (UK)

Radiation induced defects and thermoluminescence mechanism in aluminum oxide

Energy Technology Data Exchange (ETDEWEB)

Atobe, K.; Kobayashi, T.; Awata, T. [Naruto Univ. of Education, Tokushima (Japan); Okada, M. [Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst; Nakagawa, M. [Kagawa Univ., Faculty of Education, Takamatsu, Kagawa (Japan)

2001-01-01

The thermoluminescence of the irradiated aluminum oxides were measured to study the radiation induced defects and their behaviors. Neutron and {gamma}-ray irradiation were performed for a shingle crystal of the high purity aluminum oxide. The thermoluminescence glow curve and its activation energy were measured. The spectroscopy measurement on the thermoluminescence and the absorption are also carried out. The observed 430 and 340 nm peaks are discussed relating to the F{sup +} and F centers, respectively. Activation state of the F center transits to 3P state through 1P state by emitting phonons. Trapped electron on 3P state emits phonon of 2.9 eV (430 nm) during transition to the ground state. The above reaction can be written by the equation. F{sup +} + e {yields} (F){sup *} {yields} F + h{nu}(2.9 eV, 470 nm). (Katsuta, H.)

Simulation of the accumulation kinetics for radiation point defects in a metals with impurity

International Nuclear Information System (INIS)

Iskakov, B.M.; Nurova, A.B.

2001-01-01

In the work a kinetics of vacancies (V) and interstitial atoms (IA) accumulation for cases when the V and IA are recombining with each other, absorbing by drain and capturing by impurity atoms has been simulated. The differential equations system numerical solution was carried out by the Runge-Kutta method. The dynamical equilibrium time achievement for the point radiation defects accumulation process in the metal with impurity is considered

Ab initio molecular dynamics simulation of the effects of stacking faults on the radiation response of 3C-SiC.

Science.gov (United States)

Jiang, M; Peng, S M; Zhang, H B; Xu, C H; Xiao, H Y; Zhao, F A; Liu, Z J; Zu, X T

2016-02-16

In this study, an ab initio molecular dynamics method is employed to investigate how the existence of stacking faults (SFs) influences the response of SiC to low energy irradiation. It reveals that the C and Si atoms around the SFs are generally more difficult to be displaced than those in unfaulted SiC, and the corresponding threshold displacement energies for them are generally larger, indicative of enhanced radiation tolerance caused by the introduction of SFs, which agrees well with the recent experiment. As compared with the unfaulted state, more localized point defects are generated in faulted SiC. Also, the efficiency of damage production for Si recoils is generally higher than that of C recoils. The calculated potential energy increases for defect generation in SiC with intrinsic and extrinsic SFs are found to be higher than those in unfaulted SiC, due to the stronger screen-Coulomb interaction between the PKA and its neighbors. The presented results provide a fundamental insight into the underlying mechanism of displacement events in faulted SiC and will help to advance the understanding of the radiation response of SiC with and without SFs.

Study on radiation-responsive epigenomes

International Nuclear Information System (INIS)

Kim, Jin Hong; Chung, Byung Yeop; Lee, Seung Sik; Moon, Yu Ran; Lee, Min Hee; Kim, Ji Hong

2011-01-01

The purpose of this project is development of world-class headspring techniques of biological science for application of plant genomes/epigenomes through study on radiation- responsive epigenomes and improvement of the national competitiveness in the field of fundamental technology for biological science and industry. Research scope includes 1) Investigation of radiation-responsive epigenomes and elucidation of their relation with phenotypes, 2) Elucidation of interaction and transcription control of epigenomes and epigenetic regulators using ionizing radiation (IR), 3) Investigation of epigenome-mediated traits in plant development, differentiation and antioxidant defense using IR, and 4) Development of application techniques of radiation-responsive epigenomes for eco-monitoring and molecular breeding. Main results are as follow: Setup of conditions for chromatin immunoprecipitation in irradiated plants: investigation of aberrations in DNA methylation after treatment with different IR: elucidation of responses of epigenetic regulators to gamma rays (GR): investigation of aberrations in GR-responsive epigenetic regulators at different developmental stages: elucidation of interactive aberrations of epigenomes and epigenetic regulators after treatment of GR: comparison of functional genomes after treatment of GR or H 2 O 2 : elucidation of relation of epigenomes with GR-induced delay in senescence: elucidation of relation of epigenomes with GR-induced aberrations in pigment metabolism: comparison of antioxidant defense in epigenetic mutants: investigation of senescence-associated changes in epigenomes: investigation of senescence-associated changes in epigenetic regulators: comparison of aberrations in epigenomes at different dose of GR for mutation

Study on radiation-responsive epigenomes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Hong; Chung, Byung Yeop; Lee, Seung Sik; Moon, Yu Ran; Lee, Min Hee; Kim, Ji Hong [KAERI, Daejeon (Korea, Republic of)

2011-01-15

The purpose of this project is development of world-class headspring techniques of biological science for application of plant genomes/epigenomes through study on radiation- responsive epigenomes and improvement of the national competitiveness in the field of fundamental technology for biological science and industry. Research scope includes 1) Investigation of radiation-responsive epigenomes and elucidation of their relation with phenotypes, 2) Elucidation of interaction and transcription control of epigenomes and epigenetic regulators using ionizing radiation (IR), 3) Investigation of epigenome-mediated traits in plant development, differentiation and antioxidant defense using IR, and 4) Development of application techniques of radiation-responsive epigenomes for eco-monitoring and molecular breeding. Main results are as follow: Setup of conditions for chromatin immunoprecipitation in irradiated plants: investigation of aberrations in DNA methylation after treatment with different IR: elucidation of responses of epigenetic regulators to gamma rays (GR): investigation of aberrations in GR-responsive epigenetic regulators at different developmental stages: elucidation of interactive aberrations of epigenomes and epigenetic regulators after treatment of GR: comparison of functional genomes after treatment of GR or H{sub 2}O{sub 2}: elucidation of relation of epigenomes with GR-induced delay in senescence: elucidation of relation of epigenomes with GR-induced aberrations in pigment metabolism: comparison of antioxidant defense in epigenetic mutants: investigation of senescence-associated changes in epigenomes: investigation of senescence-associated changes in epigenetic regulators: comparison of aberrations in epigenomes at different dose of GR for mutation.

3D-imaging of selective laser melting defects in a Co–Cr–Mo alloy by synchrotron radiation micro-CT

International Nuclear Information System (INIS)

Zhou, Xin; Wang, Dianzheng; Liu, Xihe; Zhang, DanDan; Qu, Shilian; Ma, Jing; London, Gary; Shen, Zhijian; Liu, Wei

2015-01-01

Microstructure defects set the mechanical property limits for solid Co–Cr–Mo alloy prepared by selective laser melting (SLM). Previous studies were mainly based on 2D SEM images and thus not able to provide information of the 3D morphologies of the complex defects. In this paper, the remaining porosities in Co–Cr–Mo alloy parts prepared by selective laser melting were presented in relation to the laser processing parameters. In order to understand the defect forming mechanism, accurate 3D images of defects inside SLM fabricated Co–Cr–Mo samples were provided by synchrotron radiation micro-CT imaging of 300 μm thick slices cut from a 10 mm cube. With 3D reconstructed images distinctive morphologies of SLM defects spanning across the consolidated powder layers were generated. The faults can be classified as single layer or multi-layers defects. The accidental single layer defects form as gaps between adjacent laser melt tracks or melt track discontinuousness caused by inherent fluid instability under various disturbances. The first formed single layer defect generates often a multi-layer defect spanning for 2–3 subsequent powder layers. By stabilizing the melt pool flow and by reducing the surface roughness through adjusting processing parameters it appears possible to reduce the defect concentrations

Radiation response of tumours

International Nuclear Information System (INIS)

Twentyman, P.R.

1988-01-01

In this chapter knowledge regarding cellular radiation response and the factors which modify it is related to the volume changes and probability of control of irradiated solid tumors. After a discussion of the different cell populations present within solid tumors the cell population kinetics of the neoplastic cells are considered in more detail. The influence of factors related to the three-dimensional geometry of the tumor, particularly hypoxia, are considered, and also the role of the tumor vasculature in radiation response. Repair of sublethal damage (SLD) and potentially lethal damage (PLD) is dealt with and finally the relationship between the various end-points of tumor radioresponsiveness is discussed

Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons

International Nuclear Information System (INIS)

Poklonski, N. A.; Gorbachuk, N. I.; Shpakovski, S. V.; Lastovskii, S. B.; Wieck, A.

2010-01-01

Silicon diodes with a p + -n junction irradiated with 3.5-MeV electrons (the fluence ranged from 10 15 to 4 x 10 16 cm -2 ) have been studied. It is established that the dependence of the tangent of the angle of electrical losses tanδ on the frequency f of alternating current in the range f = 10 2 -10 6 Hz is a nonmonotonic function with two extrema: a minimum and a maximum. Transformation of the dependences tanδ(f) as the electron fluence and annealing temperature are increased is caused by a variation in the resistance of n-Si (the base region of the diodes) as a result of accumulation (as the fluence is increased) or disappearance and reconfiguration (in the course of annealing) of radiation defects. The role of time lag of the defect recharging in the formation of tanδ(f) is insignificant.

Vanguards of paradigm shift in radiation biology. Radiation-induced adaptive and bystander responses

International Nuclear Information System (INIS)

Matsumoto, Hideki; Hamada, Nobuyuki; Kobayashi, Yasuhiko; Takahashi, Akihisa; Ohnishi, Takeo

2007-01-01

The risks of exposure to low dose ionizing radiation (below 100 mSv) are estimated by extrapolating from data obtained after exposure to high dose radiation, using a linear no-threshold model (LNT model). However, the validity of using this dose-response model is controversial because evidence accumulated over the past decade has indicated that living organisms, including humans, respond differently to low dose/low dose-rate radiation than they do to high dose/high dose-rate radiation. In other words, there are accumulated findings which cannot be explained by the classical ''target theory'' of radiation biology. The radioadaptive response, radiation-induced bystander effects, low-dose radio-hypersensitivity, and genomic instability are specifically observed in response to low dose/low dose-rate radiation, and the mechanisms underlying these responses often involve biochemical/molecular signals that respond to targeted and non-targeted events. Recently, correlations between the radioadaptive and bystander responses have been increasingly reported. The present review focuses on the latter two phenomena by summarizing observations supporting their existence, and discussing the linkage between them from the aspect of production of reactive oxygen and nitrogen species. (author)

Study on radiation-responsive epigenomes

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Hong; Lee, Seung Sik; Bae, Hyung Woo; Kim, Ji Hong; Kim, Ji Eun; Cho, Eun Ju; Lee, Min Hee; Moon, Yu Ran [KAERI, Daejeon (Korea, Republic of)

2012-01-15

The purpose of this project is development of world-class headspring techniques of biological science for application of plant genomes/epigenomes through study on radiation- responsive epigenomes and improvement of the national competitiveness in the field of fundamental technology for biological science and industry. Research scope includes 1) Investigation of radiation-responsive epigenomes and elucidation of their relation with phenotypes, 2) Elucidation of interaction and transcription control of epigenomes and epigenetic regulators using IR, 3) Investigation of epigenome-mediated traits in plant development, differentiation and antioxidant defense using IR, and 4) Development of application techniques of radiation-responsive epigenomes for eco-monitoring and molecular breeding. Main results are as follow: practical application of ChIP in GR-treated Arabidopsis using anti-histone antibodies: mapping of DNA methylomes associated with GR-responsive transcriptomes: setup of methylated DNA quantification using HPLC: elucidation of aberrations in epigenetic regulation induced by low-dose GR using gamma phytotron: comparison of gene expression of histone-modifying enzymes after treatment of GR: elucidation of transcriptomes and physiological alterations associated with delayed senescence of drd1-6 mutant: comparison of gene expression of DNA methylation-related enzymes in GR-treated rice callus and Arabidopsis: investigation of germination capacity, low-temperature, salinity and drought stress-resistance in drd1-6 epigenetic mutant: investigation of aberrations in DNA methylation depending on dose rates of gamma radiation

Study on radiation-responsive epigenomes

International Nuclear Information System (INIS)

Kim, Jin Hong; Lee, Seung Sik; Bae, Hyung Woo; Kim, Ji Hong; Kim, Ji Eun; Cho, Eun Ju; Lee, Min Hee; Moon, Yu Ran

2012-01-01

The purpose of this project is development of world-class headspring techniques of biological science for application of plant genomes/epigenomes through study on radiation- responsive epigenomes and improvement of the national competitiveness in the field of fundamental technology for biological science and industry. Research scope includes 1) Investigation of radiation-responsive epigenomes and elucidation of their relation with phenotypes, 2) Elucidation of interaction and transcription control of epigenomes and epigenetic regulators using IR, 3) Investigation of epigenome-mediated traits in plant development, differentiation and antioxidant defense using IR, and 4) Development of application techniques of radiation-responsive epigenomes for eco-monitoring and molecular breeding. Main results are as follow: practical application of ChIP in GR-treated Arabidopsis using anti-histone antibodies: mapping of DNA methylomes associated with GR-responsive transcriptomes: setup of methylated DNA quantification using HPLC: elucidation of aberrations in epigenetic regulation induced by low-dose GR using gamma phytotron: comparison of gene expression of histone-modifying enzymes after treatment of GR: elucidation of transcriptomes and physiological alterations associated with delayed senescence of drd1-6 mutant: comparison of gene expression of DNA methylation-related enzymes in GR-treated rice callus and Arabidopsis: investigation of germination capacity, low-temperature, salinity and drought stress-resistance in drd1-6 epigenetic mutant: investigation of aberrations in DNA methylation depending on dose rates of gamma radiation

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires

International Nuclear Information System (INIS)

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A.; Kuang, Y. J.; Sukrittanon, S.; Tu, C. W.

2012-01-01

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Metastable and bistable defects in silicon

International Nuclear Information System (INIS)

Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

2000-01-01

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

Effect of homologous impurities on primary radiation defect accumulation in alkali halides

International Nuclear Information System (INIS)

Chernov, S.A.; Gavrilov, V.V.

1981-01-01

To clarify the mechanism of the effect of anion and cation homologous impurities on the primary radiation-induced defect accumulation, the transient absorption of H and F centers was studied in KCl and KBr crystals. Pulse electron accelerator technique was used. Pure and doped crystals were investigated. It was obtained that the cation homologue Na in the concentration range from 0 to 0.5 m. % in 10 -8 -10 -6 s post-irradiation time has no effect on the defect accumulation efficiency at low temperature and increases the latter at high temperature. At large post-irradiation time and at high temperatures the rise of efficiency at low Na concentration and decrease of it at high Na concentrations were observed. The conclusion was made that Na does not affect the generation process. The anion homologous impurities (I and Br) lead to a significant increase of the accumulation efficiency due to the formation of more stable F-H pair at self-trapped exciton decay on anion impurities compared with that formed in perfect lattice. Some assumptions are advanced to explain the effect [ru

Medical response to radiation emergencies in Argentina

International Nuclear Information System (INIS)

Gisone, Pablo A.; Perez, Maria del R.; Dubner, Diana L.; Michelin, Severino C.; Vazquez, M.; Demayo, O.

2006-01-01

Although radiation accidents are not frequent, the increasing use of radioisotopes in medicine and industry increases the likelihood of such accidental situations. Additionally, risks posed by the malevolent use of radiation sources have been highlighted during the last few years. In this context, the enhancement of national capabilities for medical assistance of victims in radiation emergencies becomes relevant. This communication describes the organization of medical response to radiation emergencies existing in Argentina. A three-level system for medical response has been developed: pre-hospital response given on-site by local emergency services, assistance provided by emergency departments of local general hospitals and central reference hospitals for treatment of acute radiation syndrome, cutaneous radiation syndrome and internal contamination. An education and training program is regularly executed at the three levels, including theoretical background as well as practical training. Guidelines and protocols for medical handling of victims have been elaborated and implemented. Research and development of new strategies for diagnosis and treatment of radiation injuries are promoted by ARN in close collaboration with physicians belonging to reference hospitals. (author)

Complex of GRAD programs for analytical calculation of radiation defects generation in solids

International Nuclear Information System (INIS)

Suvorov, A.L.; Zabolotnyj, V.T.; Babaev, V.P.

1989-01-01

Complex of programms for analytical calculation of generation of radiation defects (GRAD) in solids, and also of their recombination during cascade area relaxation and postradiation annealing, of mass removing by atomic collisions in volume (mixing) and through the surface (sputtering), of structure - phase state and property changes is suggested. The complex volume is less than 10 KBytes and it may be realized by computer of any type. Satisfactional agreement with more wide range of experimental data in comparison with tradition models is obtained. 27 refs.; 2 figs

Incidence of neural tube defects in the natural radiation coastal areas of Kerala

International Nuclear Information System (INIS)

Jaikrishan, G.; Sudheer, K.R.; Andrews, V.J.; Koya, P.K.M.; Cheriyan, V.D.; Seshadri, M.

2010-01-01

All consecutive births in selected government hospitals in and around the high level natural background radiation areas (HLNRA) of Kerala were monitored for congenital malformations observable at birth since 1995. The HLNR area, a coastal strip of land about 55 km in length and 0.5 km in breadth from Purakkad in the north in Alleppey district to Sakthikulangara in the south of Quilon district, stands out among the most prominent background radiation areas of the world. Natural deposit of monazite sand, containing Thorium (8-10%), Uranium (0.3%) and corresponding decay products, is the source of elevated background radiation, ranging from < 1 to 45 mGy/year. Wide variation in dose, due to the patchy and non-uniform distribution of Monazite sand, enables in built controls. High population density, limited migration, ethnic diversity, good literacy, health awareness, institutionalized births and acceptance of small family norm are some of the key features of the population. Areas with a mean radiation dose of more than 1.5 mGy/year were treated as HLNR areas and areas with a dose level of 1.5 mGy/year or less were treated as normal level radiation (NLNR) areas. The study carried out since 1995 does not seem to implicate HLNR in the incidence of neural tube defects among newborns

Influence of pretreatment temperature cycling on the radiating defect formation in silicon doped by samarium

International Nuclear Information System (INIS)

Abdurakhmanov, K.P.; Nazyrov, D.E.

2006-01-01

Full text: The raise of thermal and radiation stability as it is known, is one of actual problems of physics semiconductors. Recently it is established, that the rare-earth elements (REE) raise a stability of silicon to exterior action. In this connection the investigation of silicon doped REE by samarium and influence on its properties of heat treatments and radiation exposure is important. In sectional operation the outcomes of investigations of influence of samarium on thermal (600 degree C are reduced; 600 deg. + 900 deg. C; 900 deg. C; 900 deg. C + 600 deg. C; 1100 deg. C; 600 deg. C + 900 deg. C + 1100 deg. C; 900 deg. C + 600 deg. C + 1100 deg. C) thermal defect formation and radiation defect formation (exposure of γ-quanta 60 Co) both in beforehand wrought, and in thermally unfinished samples. After each cycle of heat treatments samples cool fast (throwing off in oil) or slowly (together with the furnace). Doping n-silicon REE by gadolinium and samarium was carried out during cultivation. The concentration of gadolinium and samarium in silicon, on sectional of a neutron-activation analysis was equaled 10 14 - 10 18 cm -3 . As control is model monocrystal silicon such as KEP-15/50. Para-meters of deep levels originating in control and doped REE samples, both past heat treatment or temperature cycling, and irradiated by the γ-quanta are defined by methods of a capacity spectroscopy: DLTS and IRC. The obtained outcomes have shown, that in irradiated with the γ-quanta 60 Co deep levels samples are formed with energies: E C -0,17 eV, E C -0,32 eV, EC-0,41 eV. Thus the parameters of deep levels vary depending on requirements of prestress heat treatment. For example heat treatment at 600 deg. C essentially increments a velocity of introduction of and centre (deep level of E C -0,17 eV), in comparison with a velocity of introduction of this level in samples with prestress heat treatment at 900 deg. C. In samples n-Si doped by samarium effectiveness of formation

Annealing of radiation-induced defects in vanadium and vanadium-titanium alloys

International Nuclear Information System (INIS)

Leguey, T.

1996-01-01

The annealing of defects induced by electron irradiation up to a dose of 6.10 21 m -2 at T<293 K has been investigated in single-crystals of pure vanadium and in vanadium-titanium alloys with compositions 0.3, 1 and 5 at.% Ti using positron annihilation spectroscopy. The recovery of the positron annihilation parameters in V single-crystals indicates that the defect annealing takes place in the temperature range 410-470 K without formation of microvoids for the present irradiation conditions. For the alloys the recovery onset is shifted to 460 K, the width of the annealing stage is gradually broadened with increasing Ti content, and microvoids are formed for annealing temperatures at the end of the recovery stage. The results show that the vacancy release from vacancy-interstitial impurity pairs and subsequent recombination with interstitial loops is the mechanism of the recovery in pure V. For V-Ti alloys, vacancy-Ti-interstitial impurity complexes and vacancy-Ti pairs appear to be the defects responsible for the positron trapping. The broadening of the recovery stage with increasing Ti content indicates that solute Ti is a very effective trap for vacancies in V. (orig.)

Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders

Science.gov (United States)

Everitt, Henry

2013-03-01

Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface

Radiation damage in CaF2: Gd

International Nuclear Information System (INIS)

Prado, L.

1979-01-01

Calcium fluoride crystals doped with Gd 3+ at four different concentrations were irradiated at room temperature. The damage produced by radiation and the primary and secondary effects as well were studied by optical spectroscopy. The increase in optical absorption (with loss of transparency) varied from sample as a function of concentration and dose. The coloration curves showed an evolution from two to three radiation damage steps when going from a pure to the most Gd 3+ concentrated sample. The obtained spectra were analysed at characteristic wave lenghts of electronic defects (photochromic centers, F and its aggregates) and of Gd 3+ and Gd 2+ defects. As a result of the radiation damage the valence change (Gd 3+ →Gd 2+ ) and its reversible character under thermal activation were directly observed. These effects were correlated with other observed effects such as the room temperature luminescence after the irradiation ceased. The non radiative F centers formation from the interaction of holes and photochromic centers was also observed and analysed. A thermal activation study of the several defects responsible for the different absorption bands was made. Values of activation energies were obtained as expected for the kind of defects involved in these processes [pt

Chinese experience on medical response to radiation emergencies

International Nuclear Information System (INIS)

Liu, Ying; Qin, Bin; Lei, Cuiping; Chen, Huifang; Han, Yuhong

2008-01-01

Full text: Chinese Center for Medical Response to Radiation Emergency (CCMRRE) was established in 1992, based on the National Institute for Radiological Protection, China CDC (NIRP, China CDC). CCMRRE is a liaison of WHO/REMPAN and functions as a national and professional institute for medical preparedness and response to emergencies involving radioactive material. CCMRRE participates in drafting National Medical Assistant Program for Radiation Emergency and relevant technical documents, develops preventive measures and technique means of medical preparedness and response to radiation emergency. CCMRRE is responsible for medical response to radiological or nuclear accident on national level. CCMRRE holds training courses, organizes drills and provides technical support to local medical organizations in practicing medical preparedness and response to radiation emergency. CCMRRE collects, analyzes and exchanges information on medical response to radiological and nuclear emergency and establishes relevant database. CCMRRE also guides and participates in radiation pollution monitoring on accident sites. In the past ten years, we accumulate much knowledge and experience on medical response to radiation emergencies. In this context, we will discuss Xinzhou Accident, which took place in 1992 and involved in three deaths, and Ha'erbin Accident that took place in 2005 and involved one death. A father and two brothers in Xinzhou Accident died of over-exposed to 60 Co source and misdiagnosis and improper treatment, which indicates that most general practitioners are uncertain about the health consequences of exposure to ionizing radiation and the medical management of exposed patients. When Ha'erbin Accident happened in 2005, the local hospital gave the right diagnosis and treatment based on the clinic symptoms and signs, which prevent more people suffering from over-expose to 192 Ir source. The distinct changes comes from the education and training to primary doctors related

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

International Nuclear Information System (INIS)

Shpotyuk, O.; Kovalskiy, A.; Jain, H.; Golovchak, R.; Zurawska, A.

2007-01-01

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of γ-induced coordination defect formation in stoichiometric Ge 23.5 Sb 11.8 S 64.7 glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Fundamental investigation of point defect interactions in FE-CR alloys

International Nuclear Information System (INIS)

Wirth, B.D.; Lee, H.J.; Wong, K.

2008-01-01

Full text of publication follows. Fe-Cr alloys are a leading candidate material for structural applications in Generation TV and fusion reactors, and there is a relatively large database on their irradiation performance. However, complete understanding of the response of Fe-Cr alloys to intermediate-to-high temperature irradiation, including the radiation induced segregation of Cr, requires knowledge of point defect and point defect cluster interactions with Cr solute atoms and impurities. We present results from a hierarchical multi-scale modelling approach of defect cluster behaviour in Fe-Cr alloys. The modelling includes ab initio electronic structure calculations performed using the VASP code with projector-augmented electron wave functions using PBE pseudo-potentials and a collinear treatment of magnetic spins, molecular dynamics using semi-empirical Finnic-Sinclair type potentials, and kinetic Monte Carlo simulations of coupled defect and Cr transport responsible for microstructural evolution. The modelling results are compared to experimental observations in both binary Fe-Cr and more complex ferritic-martensitic alloys, and provide a basis for understanding a dislocation loop evolution and the observations of Cr enrichment and depletion at grain boundaries in various irradiation experiments. (authors)

Responsibility structure in medical radiation applications

International Nuclear Information System (INIS)

Beekman, Z.M.

1989-01-01

The author discusses the various aspects of the responsibilities of physicians and clinical physicists with regard to radiation protection in medical applications of ionizing radiation. It becomes still clearer that the physician, who carries out the examination or the treatment, also has to bear the responsibility. this holds for the indication assessment as well as for optimization of the quality of the examination or treatment versus radiation burden of the patient, radiologic worker and thirds. Further it is clear that the physician in these will have to delegate specific tasks and responsibilities, whether or not in the elongated-arm construction. The clinical physicist is responsible in particular for the applications of the physical methods and watches the quality of the apparatus and methods used. As such he also is responsible for the technical workers, who take care of the preventive and corrective maintenance. The principal responsibility of the clinical physicist however lies in the field of standardization and calibration of medical-physical instruments. Besides this investigation into and development of new techniques, methods and apparatus come up, while also education and training of various profession groups involved need attention. (author). 6 refs.; 1 tab

Defective B cell response to T-dependent immunization in lupus-prone mice

Science.gov (United States)

Niu, Haitao; Sobel, Eric S.; Morel, Laurence

2009-01-01

Lupus anti-nuclear Abs show the characteristics of Ag-driven T cell-dependent (TD) humoral responses. If autoAgs elicit the same response as exogenous Ags, lupus should enhance humoral responses to immunization. Blunted responses to various immunizations have, however, been reported in a significant portion of lupus patients. In this study, we show that lupus-prone B6.Sle1.Sle2.Sle3 (B6.TC) mice produce significantly less Ab in response to TD immunization than congenic controls, while producing significantly more total Ig. This blunted Ab response to TD Ag could be reconstituted with B6.TC B and CD4+ T cells. Multiple defects were found in the B6.TC response to NP-KLH as compared to total Ig, including a smaller percentage of B cells participating to the NP-response, a reduced entry into germinal centers, and highly defective production of NP-specific long-lived plasma cells in the bone marrow. B6.TC plasma cells expressed reduced levels of FcγRIIb, which suggests that reduced apoptosis in resident plasma cells prevents the establishment of newly-formed NP-specific plasma cells in bone marrow niches. Overall, these results show that lupus-prone mice responded differently to auto- and exogenous antigens and suggest that low FcγRIIb, hypergammaglobulinemia and high autoantibody production would be predictive of a poor response to immunization in lupus patients. PMID:18924209

Radiation effect of gate controlled lateral PNP BJTs

International Nuclear Information System (INIS)

Xi Shanbin; Zhou Dong; Lu Wu; Ren Diyuan; Wen Lin; Sun Jing; Wang Zhikuan

2012-01-01

Design and fabricate a new test structure of bipolar device: the gate controlled later PNP bipolar transistor (GCLPNP BJT), then sealed it together with the normal lateral PNP bipolar transistor which is made under the same manufacture process. Then 60 Co-γ radiation effects and annealing behaviors of these two structures are investigated. The results show that the response about base current, collector current, access base current and normalized current gain of GCLPNP bipolar transistor are almost identical to the normal one. Radiation induced defects in the GCLPNP bipolar transistor is separated quantitatively. Studying on the quantitative change of radiation induced defects in the domestic gate controlled bipolar transistor should be a useful way to research the change of radiation induced charges of normal PNP bipolar transistor. (authors)

Synthetic Defects for Vibrothermography

Science.gov (United States)

Renshaw, Jeremy; Holland, Stephen D.; Thompson, R. Bruce; Eisenmann, David J.

2010-02-01

Synthetic defects are an important tool used for characterizing the performance of nondestructive evaluation techniques. Viscous material-filled synthetic defects were developed for use in vibrothermography (also known as sonic IR) as a tool to improve inspection accuracy and reliability. This paper describes how the heat-generation response of these VMF synthetic defects is similar to the response of real defects. It also shows how VMF defects can be applied to improve inspection accuracy for complex industrial parts and presents a study of their application in an aircraft engine stator vane.

Microstructural evolution of radiation induced defects in ZnO during isochronal annealing

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Balogh, A.G.

1999-01-01

In this study the authors discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing. The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2 x 10 18 p/cm 2 or with 1 MeV electrons to a fluence of 1 x 10 18 e/cm 2 . The investigation was performed with positron lifetime and Doppler-Broadening measurements. The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons

Identification of equilibrium and irradiation-induced defects in nuclear ceramics: electronic structure calculations of defect properties and positron annihilation characteristics

International Nuclear Information System (INIS)

Wiktor, Julia

2015-01-01

During in-pile irradiation the fission of actinide nuclei causes the creation of large amounts of defects, which affect the physical and chemical properties of materials inside the reactor, in particular the fuel and structural materials. Positron annihilation spectroscopy (PAS) can be used to characterize irradiation induced defects, empty or containing fission products. This non-destructive experimental technique involves detecting the radiation generated during electron-positron annihilation in a sample and deducing the properties of the material studied. As positrons get trapped in open volume defects in solids, by measuring their lifetime and momentum distributions of the annihilation radiation, one can obtain information on the open and the chemical environments of the defects. In this work electronic structure calculations of positron annihilation characteristics were performed using two-component density functional theory (TCDFT). To calculate the momentum distributions of the annihilation radiation, we implemented the necessary methods in the open-source ABINIT program. The theoretical results have been used to contribute to the identification of the vacancy defects in two nuclear ceramics, silicon carbide (SiC) and uranium dioxide (UO 2 ). (author) [fr

Compact Models for Defect Diffusivity in Semiconductor Alloys.

Energy Technology Data Exchange (ETDEWEB)

Wright, Alan F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Modine, Normand A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Nanostructure Physics Department; Lee, Stephen R. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Department; Foiles, Stephen M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Computational Materials and Data Science Department

2017-09-01

Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE

Radiation-induced defects in chalcogenide glasses characterized by combined optical spectroscopy, XPS and PALS methods

Energy Technology Data Exchange (ETDEWEB)

Shpotyuk, O. [Institute of Physics of Jan Dlugosz University, 13/15 al. Armii Krajowej, Czestochowa 42201 (Poland); Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Kovalskiy, A.; Jain, H. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Golovchak, R. [Lehigh University, 5 East Packer Avenue, Bethlehem, PA 18015-3195 (United States); Lviv Institute of Materials of SRC ' ' Carat' ' , 202, Stryjska str., 79031 Lviv (Ukraine); Zurawska, A. [Opole University of Technology, 75, Ozimska str., Opole 45370 (Poland)

2007-03-15

Temperature-dependent optical absorption spectroscopy, high-resolution X-ray photoelectron spectroscopy and positron annihilation lifetimes spectroscopy are utilized to understand radiation-induced changes in Ge-Sb-S chalcogenide glasses. Theoretically predicted topological scheme of {gamma}-induced coordination defect formation in stoichiometric Ge{sub 23.5}Sb{sub 11.8}S{sub 64.7} glass composition is supported by these measurements. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Health status of grandchildren of subjects occupationally exposed to chronic radiation. Communication 4. Congenital developmental defects

International Nuclear Information System (INIS)

Petrushkina, N.P.; Musatkova, O.B.

1996-01-01

The purpose of this study was to analyze the incidence and structure of cogenital developmental defects in the grandchildren of subjects occupationally exposed to chronic external gamma-irradiation. For 830 children only grandfather was exposed, for 259 only grandmother, and for 468 grandfather and grandmother. The mean equivalent doses for gonads by the moment of conception of future parents of the cohort examined ranged from 17.3 to 145.3 sSv. The incidence and structure of congenital developmental defects in 1557 grandchildren of occupationally exposed subjects differed from that in controls. Multifactorial analysis failed to establish the effect of grandparents' and parents' exposure on the development of diseases in the progeny. Factors other than radiation proved to be significant. 13 refs.; 1 tab

Study on radiation-responsive epigenomes

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung Sik; Lee, Seung Sik; Chung, Byung Yeoup; and others

2013-01-15

The purpose of this project is development of world-class head spring techniques of biological science for application of plant genomes/epigenomes through study on radiation-responsive epigenomes and improvement of the national competitiveness in the field of fundamental technology for biological science and industry. Research scope includes 1) Investigation of radiation-responsive epigenomes and elucidation of their relation with phenotypes, 2) Elucidation of interaction and transcription control of epigenomes and epigenetic regulators using IR, 3) Investigation of epigenome-mediated traits in plant development, differentiation and antioxidant defense using IR, and 4) Development of application techniques of radiation-responsive epigenomes for eco-monitoring and molecular breeding. Main results are as follow: investigation of the expression level of histone-modifying enzymes by IR; elucidation of the structural and functional changes of chaperone protein by IR; development of transgenic plant (DRD1-6); investigation of transcription control of epigenetic regulators by IR; investigation of relevance between DNA methylation and miRNA; comparison of gene expression in wild type and cmt mutant from Arabidopsis using gene chip; investigation control of epigenetic regulators in drd1-6 mutant by drought stress; development of transgenic plant using epigenetic regulators.

The radiative heating response to climate change

Science.gov (United States)

Maycock, Amanda

2016-04-01

The structure and magnitude of radiative heating rates in the atmosphere can change markedly in response to climate forcings; diagnosing the causes of these changes can aid in understanding parts of the large-scale circulation response to climate change. This study separates the relative drivers of projected changes in longwave and shortwave radiative heating rates over the 21st century into contributions from radiatively active gases, such as carbon dioxide, ozone and water vapour, and from changes in atmospheric and surface temperatures. Results are shown using novel radiative diagnostics applied to timeslice experiments from the UM-UKCA chemistry-climate model; these online estimates are compared to offline radiative transfer calculations. Line-by-line calculations showing spectrally-resolved changes in heating rates due to different gases will also be presented.

Spectroscopic studies of the origin of radiation-induced degradation in phosphorus-doped optical fibers and preforms

International Nuclear Information System (INIS)

Origlio, G.; Messina, F.; Cannas, M.; Girard, S.; Boukenter, A.; Ouerdane, Y.

2010-01-01

In this paper, we study the radiation-induced point defects related to the phosphorus element that is commonly used to improve the optical properties of silica-based glasses but is responsible of a dramatic increase in their radiation sensitivity. To this aim, the influence of x-ray irradiation on prototype phosphorus-doped canonical fibers and their related preforms was investigated by in situ radiation induced attenuation (RIA), optical absorption, and electron spin resonance (ESR) spectroscopy. The RIA spectra in the (1.5-5 eV) range, can be explained by the presence of at least three absorption bands induced by radiation exposure. Additionally the X-dose dependence of such bands was studied. The main responsible defect for these absorption peaks was the phosphorus oxygen hole center (POHC) center, whose presence was also detected by ESR measurements both in irradiated fibers and preforms, together with the lineshape of the so called P2 defect. Correlations between the RIA bands and the ESR results allow us to assign the 2.3 and 3.0 eV bands to POHCs and to propose a scheme for the simultaneous creation of POHC and P2 defects after x-ray exposure.

Description of radiation damage in diamond sensors using an effective defect model

International Nuclear Information System (INIS)

Kassel, Florian; Guthoff, Moritz; Dabrowski, Anne; Boer, Wim de

2017-01-01

The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

Description of radiation damage in diamond sensors using an effective defect model

Energy Technology Data Exchange (ETDEWEB)

Kassel, Florian [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany); CERN, Meyrin (Switzerland); Guthoff, Moritz; Dabrowski, Anne [CERN, Meyrin (Switzerland); Boer, Wim de [Institute for Experimental Nuclear Physics (IEKP), KIT, Karlsruhe (Germany)

2017-11-15

The Beam Condition Monitoring Leakage (BCML) system is a beam monitoring device in the CMS experiment at the LHC consisting of 32 poly-crystalline (pCVD) diamond sensors. The BCML sensors, located in rings around the beam, are exposed to high particle rates originating from the colliding beams. These particles cause lattice defects, which act as traps for the ionized charge carrier leading to a reduced charge collection efficiency (CCE). The radiation induced CCE degradation was, however, much more severe than expected from low rate laboratory measurements. Measurement and simulations presented in this paper show that this discrepancy is related to the rate of incident particles. At high particle rates, the trapping rate of the ionization is strongly increased compared to the detrapping rate leading to an increased build-up of space charge. This space charge locally reduces the internal electric field increasing the trapping rate and hence reducing the CCE even further. In order to connect these macroscopic measurements with the microscopic defects acting as traps for the ionization charge, the TCAD simulation program SILVACO was used. It allows to introduce the defects as effective donor and acceptor levels, and can calculate the electric field from Transient Current Technique (TCT) signals and CCE as a function of the effective trap properties, like density, energy level, and trapping cross section. After each irradiation step, these properties were fitted to the data on the electric field from the TCT signals and CCE. Two effective acceptor and donor levels were needed to fit the data after each step. It turned out that the energy levels and cross sections could be kept constant and the trap density was proportional to the cumulative fluence of the irradiation steps. The highly non-linear rate dependent diamond polarization and the resulting signal loss can be simulated using this effective defect model and is in agreement with the measurement results

Lung Cancer Cell Line Screen Links Fanconi Anemia/BRCA Pathway Defects to Increased Relative Biological Effectiveness of Proton Radiation

International Nuclear Information System (INIS)

Liu, Qi; Ghosh, Priyanjali; Magpayo, Nicole; Testa, Mauro; Tang, Shikui; Gheorghiu, Liliana; Biggs, Peter; Paganetti, Harald; Efstathiou, Jason A.; Lu, Hsiao-Ming; Held, Kathryn D.; Willers, Henning

2015-01-01

Purpose: Growing knowledge of genomic heterogeneity in cancer, especially when it results in altered DNA damage responses, requires re-examination of the generic relative biological effectiveness (RBE) of 1.1 of protons. Methods and Materials: For determination of cellular radiosensitivity, we irradiated 17 lung cancer cell lines at the mid-spread-out Bragg peak of a clinical proton beam (linear energy transfer, 2.5 keV/μm). For comparison, 250-kVp X rays and 137 Cs γ-rays were used. To estimate the RBE of protons relative to 60 Co (Co60eq), we assigned an RBE(Co60Eq) of 1.1 to X rays to correct the physical dose measured. Standard DNA repair foci assays were used to monitor damage responses. FANCD2 was depleted using RNA interference. Results: Five lung cancer cell lines (29.4%) exhibited reduced clonogenic survival after proton irradiation compared with X-irradiation with the same physical doses. This was confirmed in a 3-dimensional sphere assay. Corresponding proton RBE(Co60Eq) estimates were statistically significantly different from 1.1 (P≤.05): 1.31 to 1.77 (for a survival fraction of 0.5). In 3 of these lines, increased RBE was correlated with alterations in the Fanconi anemia (FA)/BRCA pathway of DNA repair. In Calu-6 cells, the data pointed toward an FA pathway defect, leading to a previously unreported persistence of proton-induced RAD51 foci. The FA/BRCA-defective cells displayed a 25% increase in the size of subnuclear 53BP1 foci 18 hours after proton irradiation. Conclusions: Our cell line screen has revealed variations in proton RBE that are partly due to FA/BRCA pathway defects, suggesting that the use of a generic RBE for cancers should be revisited. We propose that functional biomarkers, such as size of residual 53BP1 foci, may be used to identify cancers with increased sensitivity to proton radiation

Lung Cancer Cell Line Screen Links Fanconi Anemia/BRCA Pathway Defects to Increased Relative Biological Effectiveness of Proton Radiation

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Ghosh, Priyanjali; Magpayo, Nicole [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Testa, Mauro; Tang, Shikui [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Gheorghiu, Liliana [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Biggs, Peter; Paganetti, Harald [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Efstathiou, Jason A. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Lu, Hsiao-Ming [Division of Radiation Physics, Department of Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Held, Kathryn D. [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States); Willers, Henning, E-mail: hwillers@mgh.harvard.edu [Laboratory of Cellular and Molecular Radiation Oncology, Massachusetts General Hospital, Boston, Massachusetts (United States)

2015-04-01

Purpose: Growing knowledge of genomic heterogeneity in cancer, especially when it results in altered DNA damage responses, requires re-examination of the generic relative biological effectiveness (RBE) of 1.1 of protons. Methods and Materials: For determination of cellular radiosensitivity, we irradiated 17 lung cancer cell lines at the mid-spread-out Bragg peak of a clinical proton beam (linear energy transfer, 2.5 keV/μm). For comparison, 250-kVp X rays and {sup 137}Cs γ-rays were used. To estimate the RBE of protons relative to {sup 60}Co (Co60eq), we assigned an RBE(Co60Eq) of 1.1 to X rays to correct the physical dose measured. Standard DNA repair foci assays were used to monitor damage responses. FANCD2 was depleted using RNA interference. Results: Five lung cancer cell lines (29.4%) exhibited reduced clonogenic survival after proton irradiation compared with X-irradiation with the same physical doses. This was confirmed in a 3-dimensional sphere assay. Corresponding proton RBE(Co60Eq) estimates were statistically significantly different from 1.1 (P≤.05): 1.31 to 1.77 (for a survival fraction of 0.5). In 3 of these lines, increased RBE was correlated with alterations in the Fanconi anemia (FA)/BRCA pathway of DNA repair. In Calu-6 cells, the data pointed toward an FA pathway defect, leading to a previously unreported persistence of proton-induced RAD51 foci. The FA/BRCA-defective cells displayed a 25% increase in the size of subnuclear 53BP1 foci 18 hours after proton irradiation. Conclusions: Our cell line screen has revealed variations in proton RBE that are partly due to FA/BRCA pathway defects, suggesting that the use of a generic RBE for cancers should be revisited. We propose that functional biomarkers, such as size of residual 53BP1 foci, may be used to identify cancers with increased sensitivity to proton radiation.

The responsible radiation protection supervisor: Who actually is he? Legal entities under public law and their legal responsibilities pursuant to radiation protection laws

International Nuclear Information System (INIS)

Brinkmann, M.

1998-01-01

All radiation protection relevant activities subject to licencing or notifying include observation of legally allocated responsibilities. Responsible radiation protection supervisor is the licence owner in person. If the holder is a legal entity, that entity is responsible as such. The executives of the entity exercise the functions of a responsible radiation protection officer, or may delegate them to an authorized deputy. In this case, the yardstick of a possible liability may be changed. The liability of the responsible persons is determined by the general legal regulations. (orig.) [de

Effect of top electrode material on radiation-induced degradation of ferroelectric thin film structures

Energy Technology Data Exchange (ETDEWEB)

Brewer, Steven J.; Bassiri-Gharb, Nazanin [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Deng, Carmen Z.; Callaway, Connor P. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Paul, McKinley K. [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Woodward Academy, College Park, Georgia 30337 (United States); Fisher, Kenzie J. [G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Riverwood International Charter School, Atlanta, Georgia 30328 (United States); Guerrier, Jonathon E.; Jones, Jacob L. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Rudy, Ryan Q.; Polcawich, Ronald G. [Army Research Laboratory, Adelphi, Maryland 20783 (United States); Glaser, Evan R.; Cress, Cory D. [Naval Research Laboratory, Washington, DC 20375 (United States)

2016-07-14

The effects of gamma irradiation on the dielectric and piezoelectric responses of Pb[Zr{sub 0.52}Ti{sub 0.48}]O{sub 3} (PZT) thin film stacks were investigated for structures with conductive oxide (IrO{sub 2}) and metallic (Pt) top electrodes. The samples showed, generally, degradation of various key dielectric, ferroelectric, and electromechanical responses when exposed to 2.5 Mrad (Si) {sup 60}Co gamma radiation. However, the low-field, relative dielectric permittivity, ε{sub r}, remained largely unaffected by irradiation in samples with both types of electrodes. Samples with Pt top electrodes showed substantial degradation of the remanent polarization and overall piezoelectric response, as well as pinching of the polarization hysteresis curves and creation of multiple peaks in the permittivity-electric field curves post irradiation. The samples with oxide electrodes, however, were largely impervious to the same radiation dose, with less than 5% change in any of the functional characteristics. The results suggest a radiation-induced change in the defect population or defect energy in PZT with metallic top electrodes, which substantially affects motion of internal interfaces such as domain walls. Additionally, the differences observed for stacks with different electrode materials implicate the ferroelectric–electrode interface as either the predominant source of radiation-induced effects (Pt electrodes) or the site of healing for radiation-induced defects (IrO{sub 2} electrodes).

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Role of Defects in Swelling and Creep of Irradiated SiC

Energy Technology Data Exchange (ETDEWEB)

Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2016-01-16

Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

Role of Defects in Swelling and Creep of Irradiated SiC

International Nuclear Information System (INIS)

Szlufarska, Izabela; Voyles, Paul; Sridharan, Kumar; Katoh, Yutai

2016-01-01

Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

Identification of the DNA repair defects in a case of Dubowitz syndrome.

Directory of Open Access Journals (Sweden)

Jingyin Yue

Full Text Available Dubowitz Syndrome is an autosomal recessive disorder with a unique set of clinical features including microcephaly and susceptibility to tumor formation. Although more than 140 cases of Dubowitz syndrome have been reported since 1965, the genetic defects of this disease has not been identified. In this study, we systematically analyzed the DNA damage response and repair capability of fibroblasts established from a Dubowitz Syndrome patient. Dubowitz syndrome fibroblasts are hypersensitive to ionizing radiation, bleomycin, and doxorubicin. However, they have relatively normal sensitivities to mitomycin-C, cisplatin, and camptothecin. Dubowitz syndrome fibroblasts also have normal DNA damage signaling and cell cycle checkpoint activations after DNA damage. These data implicate a defect in repair of DNA double strand break (DSB likely due to defective non-homologous end joining (NHEJ. We further sequenced several genes involved in NHEJ, and identified a pair of novel compound mutations in the DNA Ligase IV gene. Furthermore, expression of wild type DNA ligase IV completely complement the DNA repair defects in Dubowitz syndrome fibroblasts, suggesting that the DNA ligase IV mutation is solely responsible for the DNA repair defects. These data suggests that at least subset of Dubowitz syndrome can be attributed to DNA ligase IV mutations.

Radiation Dose-Response Relationships and Risk Assessment

International Nuclear Information System (INIS)

Strom, Daniel J.

2005-01-01

The notion of a dose-response relationship was probably invented shortly after the discovery of poisons, the invention of alcoholic beverages, and the bringing of fire into a confined space in the forgotten depths of ancient prehistory. The amount of poison or medicine ingested can easily be observed to affect the behavior, health, or sickness outcome. Threshold effects, such as death, could be easily understood for intoxicants, medicine, and poisons. As Paracelsus (1493-1541), the 'father' of modern toxicology said, 'It is the dose that makes the poison.' Perhaps less obvious is the fact that implicit in such dose-response relationships is also the notion of dose rate. Usually, the dose is administered fairly acutely, in a single injection, pill, or swallow; a few puffs on a pipe; or a meal of eating or drinking. The same amount of intoxicants, medicine, or poisons administered over a week or month might have little or no observable effect. Thus, before the discovery of ionizing radiation in the late 19th century, toxicology ('the science of poisons') and pharmacology had deeply ingrained notions of dose-response relationships. This chapter demonstrates that the notion of a dose-response relationship for ionizing radiation is hopelessly simplistic from a scientific standpoint. While useful from a policy or regulatory standpoint, dose-response relationships cannot possibly convey enough information to describe the problem from a quantitative view of radiation biology, nor can they address societal values. Three sections of this chapter address the concepts, observations, and theories that contribute to the scientific input to the practice of managing risks from exposure to ionizing radiation. The presentation begins with irradiation regimes, followed by responses to high and low doses of ionizing radiation, and a discussion of how all of this can inform radiation risk management. The knowledge that is really needed for prediction of individual risk is presented

Development of a radiation-responsive gene expression system

International Nuclear Information System (INIS)

Ogawa, Ryohei; Morii, Akihiro; Watanabe, Akihiko

2013-01-01

We have obtained a promoter enhancing expression of a gene of our interest connected downstream after activation in response to radiation stimulation and it could be used in radiogenetic therapy, a combination between radiotherapy and gene therapy. The promoter has been chosen out of a library of DNA fragments constructed by connecting the TATA box to randomly combined binding sequences of transcription factors that are activated in response to radiation. Although it was shown that the promoter activation was cell type specific, it turned out that radiation responsive promoters could be obtained for a different type of cells by using another set of transcription factor binding sequences, suggesting that the method would be feasible to obtain promoters functioning in any type of cells. Radiation reactivity of obtained promoters could be improved by techniques such as random introduction of point mutations. The improved promoters significantly enhanced expression of the luciferase gene connected downstream in response to radiation even in vivo, in addition, a gene cassette composed of one such promoter and the fcy::fur gene was confirmed useful for suicide gene therapy as shown in vitro simulation experiment, suggesting possible clinical application. (author)

Irregular radiation response of a chondrosarcoma

International Nuclear Information System (INIS)

Marsden, J.J.; Kember, N.F.; Shaw, J.E.H.

1980-01-01

The DC II mouse chondrosarcoma was shown to be a potentially valuable radiobiological tumour system since it recovered from radiation injury by regrowth from clones that could be counted in histological sections. Unfortunately, the normal growth of this tumour following s.c. implantation in the thigh was irregular both in the time before growth became evident and in the rate of growth. The response to radiation was also unreliable since tumours irradiated with the same dose (e.g. 30 Gy) showed a range of responses from shrinkage to no detectable change in growth rate. The delay in normal growth can be attributed largely to delays in vascularization while changes in growth rate may be explained by differences in tumour architecture. Radiation response may depend on variations in hypoxic fraction and in relative cellularity. Tumours having the same external dimensions may differ by a factor of 80 in the numbers of tumour cells they contain. This chondrosarcoma may prove a closer model to some human tumours than many transplantable tumours that display regular growth patterns. (author)

Radiation defects in Te-implanted germanium. Electron microscopy and computer simulation studies

International Nuclear Information System (INIS)

Kalitzova, M.G.; Karpuzov, D.S.; Pashov, N.K.

1985-01-01

Direct observation of radiation damage induced by heavy ion implantation in crystalline germanium by means of high-resolution electron microscopy is reported. The dark-field lattice imaging mode is used, under conditions suitable for object-like imaging. Conventional TEM is used for estimating the efficiency of creating visibly damaged regions. Heavy ion damage clusters with three types of inner structure are observed: with near-perfect crystalline cores, and with metastable and stable amorphous cores. The MARLOWE computer code is used to simulate the atomic collision cascades and to obtain the lateral spread distributions of point defects created. A comparison of high-resolution electron microscopy (HREM) with computer simulation results shows encouraging agreement for the average cluster dimensions and for the lateral spread of vacancies and interstitials. (author)

Effect of gamma radiation on resting B lymphocytes. II. Functional characterization of the antigen-presentation defect

International Nuclear Information System (INIS)

Ashwell, J.D.; Jenkins, M.K.; Schwartz, R.H.

1988-01-01

The effect of radiation on three discrete Ag-presentation functions in resting B cells was examined: 1) Ag uptake and processing, 2) expression of processed Ag in the context of functional class II molecules, and 3) provision of necessary co-stimulatory, or second, signals. Analysis of radiation's effect on B cell presentation of intact vs fragmented Ag or its effect on presentation by Ag-pulsed B cells indicated that damage to Ag uptake and processing could not account for the bulk of the radiation-induced Ag-presentation defect. Experiments with phosphatidylinositol hydrolysis as an indirect measure of TCR occupancy suggested that irradiation caused a fairly rapid (within 1 to 2 h) decrease in the ability of the B cell APC to display a stimulatory combination of Ag and class II molecule. Ag dose-response analyses demonstrated that when presenting a fragment of the Ag pigeon cytochrome c to a T cell clone, 3000 rad-treated B cell APC were able to stimulate approximately 50% as much phosphatidylinositol turnover as unirradiated B cells. It was also found that, in contrast to their inability to initiate T cell proliferation, and similarly to chemically cross-linked splenocytes, heavily irradiated resting B cells plus Ag induced a state of Ag hyporesponsiveness in T cell clones. This effect on T cells had the same Ag- and MHC-specificity as did receptor occupancy required for proliferation, indicating that heavily irradiated resting B cells bear functional class II molecules. Co-culture of T cells with allogeneic B cells and syngeneic heavily irradiated B cells or chemically cross-linked splenic APC plus Ag resulted in T cell proliferation and interfered with the induction of the hyporesponsive state. This co-stimulatory function was radiosensitive in resting allogeneic B cells

Emergency response and radiation monitoring systems in Russian regions

International Nuclear Information System (INIS)

Arutyunyan, R.; Osipiyants, I.; Kiselev, V.; Ogar, K; Gavrilov, S.

2008-01-01

Full text: Preparedness of the emergency response system to elimination of radiation incidents and accidents is one of the most important elements of ensuring safe operation of nuclear power facilities. Routine activities on prevention of emergency situations along with adequate, efficient and opportune response actions are the key factors reducing the risks of adverse effects on population and environment. Both high engineering level and multiformity of the nuclear branch facilities make special demands on establishment of response system activities to eventual emergency situations. First and foremost, while resolving sophisticated engineering and scientific problems emerging during the emergency response process, one needs a powerful scientific and technical support system.The emergency response system established in the past decade in Russian nuclear branch provides a high efficiency of response activities due to the use of scientific and engineering potential and experience of the involved institutions. In Russia the responsibility for population protection is imposed on regional authority. So regional emergence response system should include up-to-date tools of radiation monitoring and infrastructure. That's why new activities on development of radiation monitoring and emergency response system were started in the regions of Russia. The main directions of these activities are: 1) Modernization of the existing and setting-up new facility and territorial automatic radiation monitoring systems, including mobile radiation surveillance kits; 2) Establishment of the Regional Crisis Centres and Crisis Centres of nuclear and radiation hazardous facilities; 3) Setting up communication systems for transfer, acquisition, processing, storage and presentation of data for participants of emergency response at the facility, regional and federal levels; 4) Development of software and hardware systems for expert support of decision-making on protection of personnel, population

The investigation of radiation induced defects in MgO

International Nuclear Information System (INIS)

Puetz, M.

1990-05-01

In this paper Frenkel defects were induced in MgO by 3 MeV electrons at low temperature. These defects were investigated by measurements of the optical absorption, by investigating the lattice parameters and Huang diffuse scattering. (WL)

Strained interface defects in silicon nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

2012-08-07

The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

International Nuclear Information System (INIS)

Johns, Paul M.; Baciak, James E.; Nino, Juan C.

2016-01-01

Some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI_3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. We show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI_3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. This work demonstrates that BiI_3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.

Radiation Damage in Scintillating Crystals

CERN Document Server

Zhu Ren Yuan

1998-01-01

Crystal Calorimetry in future high energy physics experiments faces a new challenge to maintain its precision in a hostile radiation environment. This paper discusses the effects of radiation damage in scintillating crystals, and concludes that the predominant radiation damage effect in crystal scintillators is the radiation induced absorption, or color center formation, not the loss of the scintillation light yield. The importance of maintaining crystal's light response uniformity and the feasibility to build a precision crystal calorimeter under radiation are elaborated. The mechanism of the radiation damage in scintillating crystals is also discussed. While the damage in alkali halides is found to be caused by the oxygen or hydroxyl contamination, it is the structure defects, such as oxygen vacancies, cause damage in oxides. Material analysis methods used to reach these conclusions are presented in details.

Study of defects and radiation damage in solids by field-ion and atom-probe microscopy

International Nuclear Information System (INIS)

Seidman, D.N.

1982-01-01

An attempt is made to introduce the reader to the basic physical ideas involved in the field-ion and atom-probe field-ion microscope techniques, and to the applications of these techniques to the study of defects and radiation damage in solids. The final section discusses, in precise form, the application of the atom-probe field-ion microscope to the study of the behavior of implanted 3 He and 4 He atoms in tungsten. The paper is heavily referenced so that the reader can pursue his specific research interest in detail

Epidermal stem cells response to radiative genotoxic stress

International Nuclear Information System (INIS)

Marie, Melanie

2013-01-01

Human skin is the first organ exposed to various environmental stresses, which requires the development by skin stem cells of specific mechanisms to protect themselves and to ensure tissue homeostasis. As stem cells are responsible for the maintenance of epidermis during individual lifetime, the preservation of genomic integrity in these cells is essential. My PhD aimed at exploring the mechanisms set up by epidermal stem cells in order to protect themselves from two genotoxic stresses, ionizing radiation (Gamma Rays) and ultraviolet radiation (UVB). To begin my PhD, I have taken part of the demonstration of protective mechanisms used by keratinocyte stem cells after ionizing radiation. It has been shown that these cells are able to rapidly repair most types of radiation-induced DNA damage. Furthermore, we demonstrated that this repair is activated by the fibroblast growth factor 2 (FGF2). In order to know if this protective mechanism is also operating in cutaneous carcinoma stem cells, we investigated the response to gamma Rays of carcinoma stem cells isolated from a human carcinoma cell line. As in normal keratinocyte stem cells, we demonstrated that cancer stem cells could rapidly repair radio-induced DNA damage. Furthermore, fibroblast growth factor 2 also mediates this repair, notably thanks to its nuclear isoforms. The second project of my PhD was to study human epidermal stem cells and progenitors responses to UVB radiation. Once cytometry and irradiation conditions were set up, the toxicity of UVB radiation has been evaluate in the primary cell model. We then characterized UVB photons effects on cell viability, proliferation and repair of DNA damage. This study allowed us to bring out that responses of stem cells and their progeny to UVB are different, notably at the level of part of their repair activity of DNA damage. Moreover, progenitors and stem cells transcriptomic responses after UVB irradiation have been study in order to analyze the global

Thermoluminescence response of new KClxBr1-x :EuCl3 sintered phosphors exposed to beta and gamma radiation

International Nuclear Information System (INIS)

Bernal, R.; Cruz-Zaragoza, E.; Cruz-Vazquez, C.; Burruel-Ibarra, S. E.; Rivera-Flores, M. J.; Barboza-Flores, M.

2006-01-01

Alkali halides crystals have been the subject of intense research for an understanding of their radiation-induced defects and luminescence properties. They exhibit noteworthy thermoluminescence (TL) properties when exposed to ionising radiation. Currently, these materials are grown employing expensive and rather complicated techniques. In this work, the results on the TL properties of new alkali halides phosphors fabricated by a simple and inexpensive procedure are presented. The samples were made by mixing KCl, KBr and EuCl 3 salts, and compressing them at a pressure of 3.2 x 10 7 Pa during 3 min, followed by sintering at 700 deg. C during 24 h under air atmosphere. The dosimetric response of the samples showed an increase with radiation dose in the 1.5-20.0 Gy dose range for beta and gamma radiation. The TL glow curves in sintered samples presented significant differences in their peak structures compared with monocrystalline samples, indicating that the nature of the trapping states and the recombination mechanisms may be different. (authors)

Radiation and desiccation response motif mediates radiation induced gene expression in D. radiodurans

International Nuclear Information System (INIS)

Anaganti, Narasimha; Basu, Bhakti; Apte, Shree Kumar

2015-01-01

Deinococcus radiodurans is an extremophile that withstands lethal doses of several DNA damaging agents such as gamma irradiation, UV rays, desiccation and chemical mutagens. The organism responds to DNA damage by inducing expression of several DNA repair genes. At least 25 radiation inducible gene promoters harbour a 17 bp palindromic sequence known as radiation and desiccation response motif (RDRM) implicated in gamma radiation inducible gene expression. However, mechanistic details of gamma radiation-responsive up-regulation in gene expression remain enigmatic. The promoters of highly radiation induced genes ddrB (DR0070), gyrB (DR0906), gyrA (DR1913), a hypothetical gene (DR1143) and recA (DR2338) from D. radiodurans were cloned in a green fluorescence protein (GFP)-based promoter probe shuttle vector pKG and their promoter activity was assessed in both E. coli as well as in D. radiodurans. The gyrA, gyrB and DR1143 gene promoters were active in E. coli although ddrB and recA promoters showed very weak activity. In D. radiodurans, all the five promoters were induced several fold following 6 kGy gamma irradiation. Highest induction was observed for ddrB promoter (25 fold), followed by DR1143 promoter (15 fold). The induction in the activity of gyrB, gyrA and recA promoters was 5, 3 and 2 fold, respectively. To assess the role of RDRM, the 17 bp palindromic sequence was deleted from these promoters. The promoters devoid of RDRM sequence displayed increase in the basal expression activity, but the radiation-responsive induction in promoter activity was completely lost. The substitution of two conserved bases of RDRM sequence yielded decreased radiation induction of PDR0070 promoter. Deletion of 5 bases from 5'-end of PDR0070 RDRM increased basal promoter activity, but radiation induction was completely abolished. Replacement of RDRM with non specific sequence of PDR0070 resulted in loss of basal expression and radiation induction. The results demonstrate that

Microstrip linear phase low pass filter based on defected ground structures for partial response modulation

DEFF Research Database (Denmark)

Cimoli, Bruno; Johansen, Tom Keinicke; Olmos, Juan Jose Vegas

2018-01-01

We report a high performance linear phase low pass filter (LPF) designed for partial response (PR) modulations. For the implementation, we adopted microstrip technology and a variant of the standard stepped‐impedance technique. Defected ground structures (DGS) are used for increasing the characte......We report a high performance linear phase low pass filter (LPF) designed for partial response (PR) modulations. For the implementation, we adopted microstrip technology and a variant of the standard stepped‐impedance technique. Defected ground structures (DGS) are used for increasing...... the characteristic impedance of transmission lines. Experimental results prove that the proposed filter can successfully modulate a non‐return‐to‐zero (NRZ) signal into a five levels PR one....

Effects of hyperthermia and ionizing radiation in normal and ataxia telangiectasia human fibroblast lines

International Nuclear Information System (INIS)

Mitchel, R.E.J.; Chan, A.; Smith, B.P.; Child, S.D.; Paterson, M.C.

1984-01-01

The effects of 45 0 C hyperthermia and γ radiation have been studied in three normal human fibroblast lines (GM38, GM730, WI38) and compared to the effects in two lines derived from patients with the hereditary disease ataxia telangiectasia (AR3BI, AT5BI). All lines, both normal and γ-sensitive AT, showed a similar resistance to killing by heat alone, suggesting that the defect responsible for the increased radiation sensitivity in AT lines does not confer increased heat sensitivity. Shouldered survival curves were obtained in each case indicating the ability to accumulate sublethal heat damage. All normal and AT cell lines exhibited increased resistance to the lethal effects of heat in response to a thermal stress, indicating that the defect that causes radiosensitivity in AT cell lines does not prevent the induction of thermotolerance. It was hypothesized that in normal cells, this heat treatment inactivates the process which is already defective in AT lines, and that this process may be required for the proper rejoining of double-strand breaks produced during the repair of other radiation-induced lesions

Biological response of cancer cells to radiation treatment

Directory of Open Access Journals (Sweden)

Rajamanickam eBaskar

2014-11-01

Full Text Available Cancer is a class of diseases characterized by uncontrolled cell growth and has the ability to spread or metastasize throughout the body. In recent years, remarkable progress has been made towards the understanding of proposed hallmarks of cancer development, care and treatment modalities. Radiation therapy or radiotherapy is an important and integral component of cancer management, mostly conferring a survival benefit. Radiation therapy destroys cancer by depositing high-energy radiation on the cancer tissues. Over the years, radiation therapy has been driven by constant technological advances and approximately 50% of all patients with localized malignant tumors are treated with radiation at some point in the course of their disease. In radiation oncology, research and development in the last three decades has led to considerable improvement in our understanding of the differential responses of normal and cancer cells. The biological effectiveness of radiation depends on the linear energy transfer (LET, total dose, number of fractions and radiosensitivity of the targeted cells or tissues. Radiation can either directly or indirectly (by producing free radicals damages the genome of the cell. This has been challenged in recent years by a newly identified phenomenon known as radiation induced bystander effect (RIBE. In RIBE, the non-irradiated cells adjacent to or located far from the irradiated cells/tissues demonstrate similar responses to that of the directly irradiated cells. Understanding the cancer cell responses during the fractions or after the course of irradiation will lead to improvements in therapeutic efficacy and potentially, benefitting a significant proportion of cancer patients. In this review, the clinical implications of radiation induced direct and bystander effects on the cancer cell are discussed.

Which downstream signal transduction pathway(s) of H-ras are necessary for the cellular response(s) to ionizing radiation? (Results of an astro research fellowship year)

International Nuclear Information System (INIS)

Rudoltz, Marc S.; Muschel, Ruth J.; McKenna, W. Gillies

1996-01-01

Purpose/Background: The H-ras oncogene encodes a protein which is an essential component of multiple downstream effector pathways required for induction of proliferation and differentiation. Ras plays a role in the control some of these signal transduction pathways, such as the MAP kinase pathway which controls gene expression and the Rac-Rho pathway which controls cell morphology. Previous work from our laboratory has associated H-ras expression with radiation resistance, a prolonged delay in G2 following exposure to ionizing radiation, and suppression of radiation-induced apoptosis. In addition, H-ras cooperates with myc in transformation. Recent work by White et al. (Cell 80:533-541, 1995) and Joneson et al. (Science 271: 810-812, 1996) describes three mutations in H-ras which were engineered to eliminate different downstream signal transduction pathways of H-ras. T35S contains a serine in place of threonine at amino acid 35 and is defective for ras-induced cytoskeletal changes and initiation of DNA synthesis. E37G contains a glutamic acid in place of glycine at amino acid 37 which eliminates interaction of H-ras with a GDP/GTP exchange factor. C40 contains a substitution of cysteine for tyrosine at amino acid 40 and is defective for H-ras induction of the MAP kinase pathway. We propose that by expressing these mutant H-ras proteins in immortalized cells the downstream pathways of H-ras which regulate the cellular response(s) to ionizing radiation may be determined. Materials and Methods: pHP-5 plasmids encoding these H-ras mutant genes (see White et al.) were transfected by calcium phosphate precipitation into MR4 cells, rat embryo fibroblasts immortalized by expression of v-myc. In this vector, the cDNA for H-ras is placed under the control of a CMV constitutive promoter, and selection is provided by hygromycin. The transfections performed were as follows: V12Ras (no mutation), T35S, E37G, C40, T35S + E37G, and T35S + C40. Twenty four hours after transfection

Method for Vibration Response Simulation and Sensor Placement Optimization of a Machine Tool Spindle System with a Bearing Defect

Science.gov (United States)

Cao, Hongrui; Niu, Linkai; He, Zhengjia

2012-01-01

Bearing defects are one of the most important mechanical sources for vibration and noise generation in machine tool spindles. In this study, an integrated finite element (FE) model is proposed to predict the vibration responses of a spindle bearing system with localized bearing defects and then the sensor placement for better detection of bearing faults is optimized. A nonlinear bearing model is developed based on Jones' bearing theory, while the drawbar, shaft and housing are modeled as Timoshenko's beam. The bearing model is then integrated into the FE model of drawbar/shaft/housing by assembling equations of motion. The Newmark time integration method is used to solve the vibration responses numerically. The FE model of the spindle-bearing system was verified by conducting dynamic tests. Then, the localized bearing defects were modeled and vibration responses generated by the outer ring defect were simulated as an illustration. The optimization scheme of the sensor placement was carried out on the test spindle. The results proved that, the optimal sensor placement depends on the vibration modes under different boundary conditions and the transfer path between the excitation and the response. PMID:23012514

Natural products as radiation response modifiers

International Nuclear Information System (INIS)

Colin Seymour; Carmel Mothersill

2007-01-01

Complete text of publication follows. Protection of cells and organisms against low doses of radiation is a complex issue which must be considered at the level of cells, tissues and organisms. 'Protection' at one level, for example, prevention of cell death, may be adverse at another level, if it allows a damaged cell to survive and form a malignant tumour. Conversely, death of a cell carrying damage can be protective for the organism if it eliminates a damaged cell. Thus, it is important to understand the mechanisms involved in protection against radiation damage at several hierarchical levels. The use of natural products as radiation response modifiers is very attractive. Many of these compounds are readily available and their function and pharmacology is well understood. Some derive from venoms or natural defenses and are currently used in medicine, others include vitamins, antioxidants or cofactors, which are tried and tested nutritional supplements. Radiation effects may be targeted or untargeted. Radiation may interact directly within a cell causing a direct DNA lesion or it may elicit a bystander response from the irradiated cell. A bystander effect is produced when the irradiated cell apparently exhibits no damage from the radiation, but passes on a biochemical signal which induces neighbouring cells to apoptose or undergo a number of other responses usually associated with irradiation such as mutation induction, transformation, induction of ROS responses etc.. Effects induced in progeny of non-targeted cells in receipt of bystander signals include genetic instability, mini and microsatellite mutations and carcinogenesis. A key characteristic of these non targeted effects is that they occur at very low acute doses (of the order of 5mGy) and saturate so that effective prevention requires an agent which can effectively shut off the mechanism. While the mechanism is not fully known, it is thought to involve signals from irradiated cells communicating via

Positron annihilation study of radiation defects in α-Al2O3

International Nuclear Information System (INIS)

Kuramoto, Eiichi; Aono, Yasuhisa; Takenaka, Minoru

1989-01-01

Positron annihilation studies have been performed for the radiation-induced defects in α-Al 2 O 3 specimens. Before irradiation polycrystals of α-Al 2 O 3 showed positron annihilation lifetime about 125 psec. But this value was increased by 60 MeV O 6+ ion irradiation to about 155 psec. This is considered to be corresponding to positron lifetime at O-vacancy sites. But, this lifetime disappeared gradually in the period of several months probably because of recombination of vacancies and interstitial atoms at room temperature. On the other hand, it was found that in single crystals positron lifetime before irradiation is between these two values. This is probably due to lack of oxygen atoms in single crystals in the fabrication process and it already has O-vacancies in the matrix before irradiation. (author)

Enhanced diffusion of solute metals forming complexes with radiation defects in silica

International Nuclear Information System (INIS)

Pivin, J.C.; Garrido, E.; Rizza, G.; Thome, L.

1998-01-01

The mixing kinetics of Cu, Ag, W, Pt, and Au single layers embedded in silica when irradiated with heavy ions at temperatures (T) of 110 and 300 K was investigated by means of in situ RBS analyses in alternation with irradiations. The spreading of peaks related to the metallic species is generally anisotropic and obeys either a quadratic or a linear dependence on the ion dose according to the increasing T. The quadratic law is attributed to a control of the diffusion by the coupling of the large impurity atoms M with matrix defects, and a classical regime of radiation enhanced diffusion is observed when this coupling is made easier (higher T or mass of M). Other factors such as internal stresses affect the rates of M dissolution and diffusion. (orig.)

Responses of populations of small mammals to ionizing radiation

International Nuclear Information System (INIS)

Kitchings, J.T.

1978-01-01

Studies on the responses of small mammals to ionizing radiation have, over the past 30 years, documented numerous effects on direct mortality, reproduction, the hemopoietic systems, and radionuclide metabolism. Three general findings have resulted from past efforts: (1) ionizing radiation is a factor in environmental stress, (2) the response of wild small mammals to ionizing radiation is a mosaic of varying radiosensitivities interacting with environmental variables, and (3) one of the most sensitive organismal processes to radiation is reproduction. While an excellent understanding of the biological effects resulting from high or intermediate-level radiation exposures has been developed, this is not the case for effects of low-level doses

Gamma-induced defect production in ZrO2-Y2O3 crystals with different defectiveness

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Amonov, M.Z.; Rakov, A.F.

2002-01-01

Full text: The defectiveness degree of ZrO 2 -Y 2 O 3 crystals depends on stabilizer concentration. The work is aimed at study gamma-induced defect production in crystals with different concentration of stabilizer and defects generated by neutron irradiation. Absorption spectra were measured with Specord M-40. It was found, that after gamma-irradiation of as-grown crystals up to some dose the intensity of absorption band at 420 nm reaches the maximum level of saturation. The dose of saturation depends of the concentration of stabilizer. It means that gamma-radiation does not produce any additional defects of structure. The oxygen vacancies existing in as-grown crystals are filled by the radiation induced electrons. Since the number of oxygen vacancies depends on the stabilizer concentration, then all these vacancies can be occupied by electrons at different gamma-doses. In crystals pre-irradiated with different neutron fluences followed by gamma-irradiation, the intensity of absorption bands at 420 and 530 nm increases in two stages. The gamma-dose of the second stage beginning decreases as the neutron fluence grows. The first stage of the absorption increase is due to developing of vacancies existing in as-grown crystals. The second stage is caused by generation of additional vacancies as the result of non-radiative exciton decay near the existing structure damages. The decrease of the gamma-dose, when the second stage of vacancy accumulation begins, results from the neutron induced structure damage degree

Defects in semiconductors

CERN Document Server

Romano, Lucia; Jagadish, Chennupati

2015-01-01

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

The response of thrombosis in the portal vein or hepatic vein in hepatocellular carcinoma to radiation therapy

Energy Technology Data Exchange (ETDEWEB)

Bae, Bong Kyung; Kim, Jae Chul [Dept. of Radiation Oncology, Kyungpook National University School of Medicine, Daegu (Korea, Republic of)

2016-09-15

The purpose of current study is to evaluate the response of the patients with portal vein thrombosis (PVT) or hepatic vein thrombosis (HVT) in hepatocellular carcinoma (HCC) treated with three-dimensional conformal radiation therapy (3D-CRT). In addition, survival of patients and potential prognostic factors of the survival was evaluated. Forty-seven patients with PVT or HVT in HCC, referred to our department for radiotherapy, were retrospectively reviewed. For 3D-CRT plans, a gross tumor volume (GTV) was defined as a hypodense filling defect area in the portal vein (PV) or hepatic vein (HV). Survival of patients, and response to radiation therapy (RT) were analyzed. Potential prognostic factors for survival and response to RT were evaluated. The median survival time of 47 patients was 8 months, with 1-year survival rate of 15% and response rate of 40%. Changes in Child-Pugh score, response to RT, Eastern cooperative oncology group performance status (ECOG PS), hepatitis C antibody (HCVAb) positivity, and additional post RT treatment were statistically significant prognostic factors for survival in univariate analysis (p = 0.000, p = 0.018, p = 0.000, p = 0.013, and p = 0.047, respectively). Of these factors, changes in Child-Pugh score, and response to RT were significant for patients' prognosis in multivariate analysis (p = 0.001 and p = 0.035, respectively). RT could constitute a reasonable treatment option for patients with PVT or HVT in HCC with acceptable toxicity. Changes in Child-Pugh score, and response to RT were statistically significant factors of survival of patients.

Electron damage and defects in organic crystals

International Nuclear Information System (INIS)

Howitt, D.G.

1976-06-01

The nature of the defects discernable from and the radiation damage that is induced by high resolution electron microscopy is reported. The structural aspects of the radiation damage process can be correlated to the expected radiochemical decomposition of these materials and these effects identified. The types of local defect formed by radiation damage are often clearly distinguishable, in high resolution images, from those inherent in the microstructure. Techniques used in this type of electron microscopy and the limitations imposed by radiation damage are described as are the relevant radiochemical characteristics of these processes. In copper pthalocyanine, microstructural features distinct from those induced by radiation damage were identified which are consistent with those predicted and described by other workers in similar materials. The high resolution studies indicate that some of the microstructures observed are caused by structural rearrangements that can account, to some extent, for additional crystallographic forms that have been identified in this material and the photochemical behaviour of related structures

Study on the radiation-induced biological responses based on the analysis of metabolites

International Nuclear Information System (INIS)

Jo, Sungkee; Jung, Uhee; Park, Haeran; Roh, Changhyun; Shin, Heejune; Ryu, Dongkyoung

2013-01-01

1. Objectives □ Establishment of basis of biological radiation response study by metabolite analysis 2. Project results □ Establishment of analytical basis of radiation-responsive metabolites in biological samples - Large scale collection of tissue samples from irradiated animal for radiation metabolomics research - Establishment of mass spectromety (GC MS, LC MS-MS) analysis methods of biological samples - 3 Standard Operation Protocols (SOP) for ultra high resolution mass spectrometry (FT-ICR MS, Q-TOF MS) analysis of metabolites from biological samples - Establishment of database for radiation metabolites □ Basic research on radiation-responsive metabolites and the interpretation of their functions - Validation of spermidine as a candidate biomarker of acute radiation response in mouse blood - Verification of 5 radiation-responsive steroid hormones and alteration of their metabolic enzyme activities in mouse blood - Verification of 13 radiation-responsive amino acids (related to oxidative stress, neurotransmission, energy metabolism) in regional mouse brain -Verification of 10 radiation-responsive amino acids (related to oxidative stress, neurotransmission, energy metabolism) in regional mouse brain - Verification of 74 radiation-responsive metabolites in whole rat brain by ultra high resolution FT-ICR MS and Q-TOF MS analysis 3. Expected benefits and plan of application □ Establishment of research basis of radiation metabolomics in Korea □ Provision of core technology in radiation bioscience and safety field by application of radiation metabolomics results to the technology development in radiation biodosimetry, and radiation response evaluation and modulation

Study on the radiation-induced biological responses based on the analysis of metabolites

Energy Technology Data Exchange (ETDEWEB)

Jo, Sungkee; Jung, Uhee; Park, Haeran; Roh, Changhyun; Shin, Heejune; Ryu, Dongkyoung

2013-01-15

1. Objectives □ Establishment of basis of biological radiation response study by metabolite analysis 2. Project results □ Establishment of analytical basis of radiation-responsive metabolites in biological samples - Large scale collection of tissue samples from irradiated animal for radiation metabolomics research - Establishment of mass spectromety (GC MS, LC MS-MS) analysis methods of biological samples - 3 Standard Operation Protocols (SOP) for ultra high resolution mass spectrometry (FT-ICR MS, Q-TOF MS) analysis of metabolites from biological samples - Establishment of database for radiation metabolites □ Basic research on radiation-responsive metabolites and the interpretation of their functions - Validation of spermidine as a candidate biomarker of acute radiation response in mouse blood - Verification of 5 radiation-responsive steroid hormones and alteration of their metabolic enzyme activities in mouse blood - Verification of 13 radiation-responsive amino acids (related to oxidative stress, neurotransmission, energy metabolism) in regional mouse brain -Verification of 10 radiation-responsive amino acids (related to oxidative stress, neurotransmission, energy metabolism) in regional mouse brain - Verification of 74 radiation-responsive metabolites in whole rat brain by ultra high resolution FT-ICR MS and Q-TOF MS analysis 3. Expected benefits and plan of application □ Establishment of research basis of radiation metabolomics in Korea □ Provision of core technology in radiation bioscience and safety field by application of radiation metabolomics results to the technology development in radiation biodosimetry, and radiation response evaluation and modulation.

Defect identification using positrons

International Nuclear Information System (INIS)

Beling, C.D.; Fung, S.

2001-01-01

The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

Radiation defects in electron-irradiated InP crystals

International Nuclear Information System (INIS)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P.

1982-01-01

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed. (author)

Radiation defects in electron-irradiated InP crystals

Energy Technology Data Exchange (ETDEWEB)

Brailovskii, E.Yu.; Karapetyan, F.K.; Megela, I.G.; Tartachnik, V.P. (AN Ukrainskoj SSR, Kiev. Inst. Yadernykh Issledovanij)

1982-06-16

The results are presented of formation and annealing of defects in InP crystals at 1 to 50 MeV electron irradiation. The recovery of electrical properties in the range of 77 to 970 K during annealing processes is studied. Five low temperature annealing states in n-InP and the reverse annealing in p-InP are observed at 77 to 300 K. Four annealing stages at temperatures higher than 300 K are present. When the electron energy is increased more complicated thermostable defects are formed, and at 50 MeV electron energy besides of the point defect clusters are formed, which anneal at temperatures of 800 to 970 K. It is shown that the peculiarities of the Hall mobility at irradiation and annealing are caused by the scattering centres E/sub c/ - 0.2 eV. The 'limiting' position of the Fermi level in electron irradiated InP crystals is discussed.

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

International Nuclear Information System (INIS)

Klein, P B; Binari, S C

2003-01-01

This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

The detection of radiation defects by means of the Kossel effect investigated in proton-irradiated GaP

International Nuclear Information System (INIS)

Ullrich, H.J.; Rolle, S.; Geist, V.; Stephan, D.

1984-01-01

The line intensity of Ga-K/sub α/- and P-K/sub α/-Kossel reflections from GaP irradiated by 0.3 to 1.3 MeV protons in a wide dose range (10 14 to 5 x 10 17 cm -2 ) has been investigated. The excitation of the characteristic X-rays inside the crystal lattice has been performed either by 40 keV electrons or 1.3 MeV protons. It is established that, in contrast to the P-K/sub α/-lines, certain Ga-K/sub α/-reflections respond very sensitively to radiation defects, manifest as increase or decrease in line intensity. The reason is probably a modification of extinction effects caused by lattice defects. The different behaviour of these phenomena is discussed and an explanation proposed. The lattice disorder is determined by channeling backscattering measurements. (author)

Deficient innate immunity, thymopoiesis, and gene expression response to radiation in survivors of childhood acute lymphoblastic leukemia.

Science.gov (United States)

Leung, Wing; Neale, Geoffrey; Behm, Fred; Iyengar, Rekha; Finkelstein, David; Kastan, Michael B; Pui, Ching-Hon

2010-06-01

Survivors of childhood acute lymphoblastic leukemia (ALL) are at an increased risk of developing secondary malignant neoplasms. Radiation and chemotherapy can cause mutations and cytogenetic abnormalities and induce genomic instability. Host immunity and appropriate DNA damage responses are critical inhibitors of carcinogenesis. Therefore, we sought to determine the long-term effects of ALL treatment on immune function and response to DNA damage. Comparative studies on 14 survivors in first complete remission and 16 siblings were conducted. In comparison to siblings on the cells that were involved in adaptive immunity, the patients had either higher numbers (CD19+ B cells and CD4+CD25+ T regulatory cells) or similar numbers (alphabetaT cells and CD45RO+/RA- memory T cells) in the blood. In contrast, patients had lower numbers of all lymphocyte subsets involved in innate immunity (gammadeltaT cells and all NK subsets, including KIR2DL1+ cells, KIR2DL2/L3+ cells, and CD16+ cells), and lower natural cytotoxicity against K562 leukemia cells. Thymopoiesis was lower in patients, as demonstrated by less CD45RO-/RA+ naïve T cell and less SjTREC levels in the blood, whereas the Vbeta spectratype complexity score was similar. Array of gene expression response to low-dose radiation showed that about 70% of the probesets had a reduced response in patients. One of these genes, SCHIP-1, was also among the top-ranked single nucleotide polymorphisms (SNPs) during the whole-genome scanning by SNP microarray analysis. ALL survivors were deficient in innate immunity, thymopoiesis, and DNA damage responses to radiation. These defects may contribute to their increased likelihood of second malignancy. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

Mouse genetic approaches applied to the normal tissue radiation response

International Nuclear Information System (INIS)

Haston, Christina K.

2012-01-01

The varying responses of inbred mouse models to radiation exposure present a unique opportunity to dissect the genetic basis of radiation sensitivity and tissue injury. Such studies are complementary to human association studies as they permit both the analysis of clinical features of disease, and of specific variants associated with its presentation, in a controlled environment. Herein I review how animal models are studied to identify specific genetic variants influencing predisposition to radiation-induced traits. Among these radiation-induced responses are documented strain differences in repair of DNA damage and in extent of tissue injury (in the lung, skin, and intestine) which form the base for genetic investigations. For example, radiation-induced DNA damage is consistently greater in tissues from BALB/cJ mice, than the levels in C57BL/6J mice, suggesting there may be an inherent DNA damage level per strain. Regarding tissue injury, strain specific inflammatory and fibrotic phenotypes have been documented for principally, C57BL/6 C3H and A/J mice but a correlation among responses such that knowledge of the radiation injury in one tissue informs of the response in another is not evident. Strategies to identify genetic differences contributing to a trait based on inbred strain differences, which include linkage analysis and the evaluation of recombinant congenic (RC) strains, are presented, with a focus on the lung response to irradiation which is the only radiation-induced tissue injury mapped to date. Such approaches are needed to reveal genetic differences in susceptibility to radiation injury, and also to provide a context for the effects of specific genetic variation uncovered in anticipated clinical association studies. In summary, mouse models can be studied to uncover heritable variation predisposing to specific radiation responses, and such variations may point to pathways of importance to phenotype development in the clinic.

Reconstruction of mandibular defects after radiation, using a free, living bone, graft transferred by microvascular anastomoses. An experimental study

International Nuclear Information System (INIS)

Ostrup, L.T.; Fredrickson, J.M.

1975-01-01

The replacement of a mandibular defect by a free, composite rib graft, transferred by microvascular anastomoses of the posterior intercostal vessels to donor vessels in the neck was described previously. We now present data which demonstrate that successful results can be achieved even after radical mandibular radiation. This technique, done in dogs, has obvious implications in the management of oral cancer in man

Radiation, Inflammation, and Immune Responses in Cancer

Energy Technology Data Exchange (ETDEWEB)

Multhoff, Gabriele [Department of Radiation Oncology, Klinikum rechts der Isar, Technische Universität München, Munich (Germany); Helmholtz Zentrum München, Clinical Cooperation Group Innate Immunity in Tumor Biology, Munich (Germany); Radons, Jürgen, E-mail: raj10062@web.de [multimmune GmbH, Munich (Germany)

2012-06-04

Chronic inflammation has emerged as one of the hallmarks of cancer. Inflammation also plays a pivotal role in modulating radiation responsiveness of tumors. As discussed in this review, ionizing radiation (IR) leads to activation of several transcription factors modulating the expression of numerous mediators in tumor cells and cells of the microenvironment promoting cancer development. Novel therapeutic approaches thus aim to interfere with the activity or expression of these factors, either in single-agent or combinatorial treatment or as supplements of the existing therapeutic concepts. Among them, NF-κB, STAT-3, and HIF-1 play a crucial role in radiation-induced inflammatory responses embedded in a complex inflammatory network. A great variety of classical or novel drugs including nutraceuticals such as plant phytochemicals have the capacity to interfere with the inflammatory network in cancer and are considered as putative radiosensitizers. Thus, targeting the inflammatory signaling pathways induced by IR offers the opportunity to improve the clinical outcome of radiation therapy by enhancing radiosensitivity and decreasing putative metabolic effects. Since inflammation and sex steroids also impact tumorigenesis, a therapeutic approach targeting glucocorticoid receptors and radiation-induced production of tumorigenic factors might be effective in sensitizing certain tumors to IR.

Radiation, Inflammation, and Immune Responses in Cancer

International Nuclear Information System (INIS)

Multhoff, Gabriele; Radons, Jürgen

2012-01-01

Chronic inflammation has emerged as one of the hallmarks of cancer. Inflammation also plays a pivotal role in modulating radiation responsiveness of tumors. As discussed in this review, ionizing radiation (IR) leads to activation of several transcription factors modulating the expression of numerous mediators in tumor cells and cells of the microenvironment promoting cancer development. Novel therapeutic approaches thus aim to interfere with the activity or expression of these factors, either in single-agent or combinatorial treatment or as supplements of the existing therapeutic concepts. Among them, NF-κB, STAT-3, and HIF-1 play a crucial role in radiation-induced inflammatory responses embedded in a complex inflammatory network. A great variety of classical or novel drugs including nutraceuticals such as plant phytochemicals have the capacity to interfere with the inflammatory network in cancer and are considered as putative radiosensitizers. Thus, targeting the inflammatory signaling pathways induced by IR offers the opportunity to improve the clinical outcome of radiation therapy by enhancing radiosensitivity and decreasing putative metabolic effects. Since inflammation and sex steroids also impact tumorigenesis, a therapeutic approach targeting glucocorticoid receptors and radiation-induced production of tumorigenic factors might be effective in sensitizing certain tumors to IR.

Overexposure of patients due to malfunctions or defects in radiation equipment

International Nuclear Information System (INIS)

Gill, J.R.

1992-01-01

Some 38 incidents involving patient overexposure due to malfunctions or defects in radiation equipment were notified to HSE between 1986 and 1990. Of these cases, 30 involved diagnostic X ray equipment, while the remainder involved nuclear medicine or radiotherapy equipment. Those cases involving X ray equipment are examined in detail and grouped into six categories. The numbers of patients affected varied. In one case an estimated 350 patients were affected: in another, 240; while 13 cases affected only a single patient. A very rough estimate of the collective effective dose equivalent in the 30 cases comes to 5 man sieverts. It is concluded that improvements are needed in fault finding procedures, and guidance is needed on consistent methods of dose estimation and reporting. Improvements for the longer term include the selection of reliable components during manufacture; application of HSE guidance in software design for programmable electronic systems; and equipment design to incorporate fault detection and inhibition of operation to prevent excessive exposures

Oligodendroglial response to ionizing radiation: Dose and dose-rate response

International Nuclear Information System (INIS)

Levy, R.P.

1991-12-01

An in vitro system using neuroglia from neonatal rat brain was developed to examine the morphologic, immunocytochemical and biochemical response of oligodendroglia to ionizing radiation. Following acute γ-irradiation at day-in-culture (DIC) 8, oligodendrocyte counts at DIC 14 were 55% to 65% of control values after 2 Gy, and 29% to 36% after 5 Gy. Counts increased to near-normal levels at DIC 21 in the 2 Gy group and to 75% of normal in the 5 Gy group. Myelin basic protein levels (MBP) at DIC 14 were 60% of control values after 2 Gy, and 40% after 5 Gy. At DIC 21, MBP after 2 Gy was 45% greater than that observed at DIC 14, but MBP, as a fraction of age-matched control values, dropped from 60% to 50%. Following 5 Gy, absolute MBP changed little between DIC 14 and DIC 21, but decreased from 40% to 25% of control cultures. The response to split-dose irradiation indicated that nearly all sublethal damage in the oligodendrocyte population (and its precursors) was repaired within 3 h to 4 h. A new compartmental cell model for radiation response in vitro of the oligodendrocyte population is proposed and examined in relation to the potential reaction to radiation injury in the brain

Oligodendroglial response to ionizing radiation: Dose and dose-rate response

Energy Technology Data Exchange (ETDEWEB)

Levy, Richard P. [Univ. of California, Berkeley, CA (United States)

1991-12-01

An in vitro system using neuroglia from neonatal rat brain was developed to examine the morphologic, immunocytochemical and biochemical response of oligodendroglia to ionizing radiation. Following acute γ-irradiation at day-in-culture (DIC) 8, oligodendrocyte counts at DIC 14 were 55% to 65% of control values after 2 Gy, and 29% to 36% after 5 Gy. Counts increased to near-normal levels at DIC 21 in the 2 Gy group and to 75% of normal in the 5 Gy group. Myelin basic protein levels (MBP) at DIC 14 were 60% of control values after 2 Gy, and 40% after 5 Gy. At DIC 21, MBP after 2 Gy was 45% greater than that observed at DIC 14, but MBP, as a fraction of age-matched control values, dropped from 60% to 50%. Following 5 Gy, absolute MBP changed little between DIC 14 and DIC 21, but decreased from 40% to 25% of control cultures. The response to split-dose irradiation indicated that nearly all sublethal damage in the oligodendrocyte population (and its precursors) was repaired within 3 h to 4 h. A new compartmental cell model for radiation response in vitro of the oligodendrocyte population is proposed and examined in relation to the potential reaction to radiation injury in the brain.

Oligodendroglial response to ionizing radiation: Dose and dose-rate response

Energy Technology Data Exchange (ETDEWEB)

Levy, R.P.

1991-12-01

An in vitro system using neuroglia from neonatal rat brain was developed to examine the morphologic, immunocytochemical and biochemical response of oligodendroglia to ionizing radiation. Following acute {gamma}-irradiation at day-in-culture (DIC) 8, oligodendrocyte counts at DIC 14 were 55% to 65% of control values after 2 Gy, and 29% to 36% after 5 Gy. Counts increased to near-normal levels at DIC 21 in the 2 Gy group and to 75% of normal in the 5 Gy group. Myelin basic protein levels (MBP) at DIC 14 were 60% of control values after 2 Gy, and 40% after 5 Gy. At DIC 21, MBP after 2 Gy was 45% greater than that observed at DIC 14, but MBP, as a fraction of age-matched control values, dropped from 60% to 50%. Following 5 Gy, absolute MBP changed little between DIC 14 and DIC 21, but decreased from 40% to 25% of control cultures. The response to split-dose irradiation indicated that nearly all sublethal damage in the oligodendrocyte population (and its precursors) was repaired within 3 h to 4 h. A new compartmental cell model for radiation response in vitro of the oligodendrocyte population is proposed and examined in relation to the potential reaction to radiation injury in the brain.

Modulation of radiation response by histone deacetylase inhibition

International Nuclear Information System (INIS)

Chinnaiyan, Prakash; Vallabhaneni, Geetha; Armstrong, Eric M.S.; Huang, Shyh-Min; Harari, Paul M.

2005-01-01

Purpose: Histone deacetylase (HDAC) inhibitors, which modulate chromatin structure and gene expression, represent a class of anticancer agents that hold particular potential as radiation sensitizers. In this study, we examine the capacity of the HDAC inhibitor suberoylanilide hydroxamic acid (SAHA) to modulate radiation response in human tumor cell lines and explore potential mechanisms underlying these interactions. Methods and materials: Cell proliferation: Exponentially growing tumor cells were incubated in medium containing 0-10 μM of SAHA for 72 h. Cells were fixed/stained with crystal violet to estimate cell viability. Apoptosis: Caspase activity was analyzed by fluorescence spectroscopy using a fluorescein labeled pan-caspase inhibitor. Cells were harvested after 48 h of exposure to SAHA (1.0 μM), radiation (6 Gy), or the combination. Whole cell lysates were evaluated for poly(ADP-ribose) polymerase (PARP) cleavage by western blot analysis. Radiation survival: Cells were exposed to varying doses of radiation ± 3 days pretreatment with SAHA (0.75-1.0 μM). After incubation intervals of 14-21 days, colonies were stained with crystal violet and manually counted. Immunocytochemistry: Cells were grown and treated in chamber slides. At specified times after treatment with SAHA, cells were fixed in paraformaldehyde, permeabilized in methanol, and probed with primary and secondary antibody solutions. Slides were analyzed using an epifluorescent microscope. Results: SAHA induced a dose-dependent inhibition of proliferation in human prostate (DU145) and glioma (U373vIII) cancer cell lines. Exposure to SAHA enhanced radiation-induced apoptosis as measured by caspase activity (p < 0.05) and PARP cleavage. The impact of SAHA on radiation response was further characterized using clonogenic survival analysis, which demonstrated that treatment with SAHA reduced tumor survival after radiation exposure. We identified several oncoproteins and DNA damage repair proteins

Contribution of radiation-induced, nitric oxide-mediated bystander effect to radiation-induced adaptive response.

Science.gov (United States)

Matsumoto, H.; Ohnishi, T.

There has been a recent upsurge of interest in radiation-induced adaptive response and bystander effect which are specific modes in stress response to low-dose low-dose rate radiation Recently we found that the accumulation of inducible nitric oxide NO synthase iNOS in wt p53 cells was induced by chronic irradiation with gamma rays followed by acute irradiation with X-rays but not by each one resulting in an increase in nitrite concentrations of medium It is suggested that the accumulation of iNOS may be due to the depression of acute irradiation-induced p53 functions by pre-chronic irradiation In addition we found that the radiosensitivity of wt p53 cells against acute irradiation with X-rays was reduced after chronic irradiation with gamma rays This reduction of radiosensitivity of wt p53 cells was nearly completely suppressed by the addition of NO scavenger carboxy-PTIO to the medium This reduction of radiosensitivity of wt p53 cells is just radiation-induced adaptive response suggesting that NO-mediated bystander effect may considerably contribute to adaptive response induced by radiation

Role of 3d-ions for radiation defect production in MgO and MgAl2O4

International Nuclear Information System (INIS)

Mironova, N.A.; Grinvald, G.A.; Skvortsova, V.N.

1985-01-01

Optical properties of MgO and MgAl 2 O 4 crystals containing chromium and manganese impurity ions were studied by exposure to but all types of radiation. Complicated defects of the ''impurity-intrinsic matrix defect'' type were preferably considered. It has been shown that different symmetry center forming chromium ions in MgO:Crsup(3+) change their valency with various efficiency being exposed to external action. Besides, the compensating vacancy does not participate in the hole center formation. For MgOxAl 2 O 3 single crystals the presence of octahedrally coordinated manganese ions suppresses the hole center creation by gamma-irradiation. Studying luminescence spectra of Crsup(3+) ions in MgAl 2 O 4 it has been states that neutron irradiation increases the degree of inversion for the magnesium-aluminium spinel

Study of radiation detectors response in standard X, gamma and beta radiation standard beams

International Nuclear Information System (INIS)

Nonato, Fernanda Beatrice Conceicao

2010-01-01

The response of 76 Geiger-Mueller detectors, 4 semiconductor detectors and 34 ionization chambers were studied. Many of them were calibrated with gamma radiation beams ( 37 Cs and 60 Co), and some of them were tested in beta radiation ( 90 Sr+ 9' 0Y e 204 Tl) and X radiation (N-60, N-80, N-100, N-150) beams. For all three types of radiation, the calibration factors of the instruments were obtained, and the energy and angular dependences were studied. For beta and gamma radiation, the angular dependence was studied for incident radiation angles of 0 deg and +- 45 deg. The curves of the response of the instruments were obtained over an angle interval of 0 deg to +- 90 deg, for gamma, beta and X radiations. The calibration factors obtained for beta radiation were compared to those obtained for gamma radiation. For gamma radiation, 24 of the 66 tested Geiger-Mueller detectors presented results for the energy dependence according to international recommendation of ISO 4037-2 and 56 were in accordance with the Brazilian ABNT 10011 recommendation. The ionization chambers and semiconductors were in accordance to national and international recommendations. All instruments showed angular dependence less than 40%. For beta radiation, the instruments showed unsatisfactory results for the energy dependence and angular dependence. For X radiation, the ionization chambers presented results for energy dependence according to the national recommendation, and the angular dependence was less than 40%. (author)

Effects of ionizing radiation on various core/clad ratio step index pure silica fibers

International Nuclear Information System (INIS)

Greenwell, R.A.; Barnes, C.E.; Nelson, G.W.

1988-01-01

Radiation testing was performed on polyimide-coated pure-silica-core step-index fibers fabricated from different preform core/clad ratios. Preliminary results indicate that the smaller the core/clad ratio, the better the radiation response of the fiber. These results are fortuitous for space applications, since the polyimide coating is also a low-outgassing wide-temperature-range small-size fiber coating material. The variations in radiation response may be due to a postdrawing anneal occurring during coating cure, which minimizes drawing-induced defects. 8 references

Effect of stacking fault energy on the neutron radiation induced defect accumulation in stainless steels

International Nuclear Information System (INIS)

Li Xiaoqiang; Al Mazouzi Abderrahim

2009-01-01

Current knowledge highlights the radiation induced segregation (RIS) and the radiation hardening as the two main effects on irradiation assisted stress corrosion cracking (IASCC). Stacking fault energy is considered as a key parameter of materials, which can influence IASCC of stainless steels in nuclear light water reactor (LWR), because it plays an important role in every process of plastic deformation, work hardening and creep behaviour. The study of the impact of SFE variations on the plastic deformation and SCC behaviour of irradiated and unirradiated austenitic steels will contribute to the understanding of IASCC mechanism. The objectives of this work, as a task within the FP6-European Project PERFECT, are to investigate the influence of the SFE on IASCC susceptibility of stainless steels, to correlation n-irradiation induced defect production, accumulation and mechanical deformation behaviour with SFE by using the state of the art experimental tools such as transmission electron microscope (TEM), positron annihilation spectroscopy (PAS), slow strain rate tests (SSRT) in simulated LWR conditions

Calculation of the Doppler broadening of the electron-positron annihilation radiation in defect-free bulk materials

International Nuclear Information System (INIS)

Ghosh, V. J.; Alatalo, M.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.; Kruseman, A. C.; Mijnarends, P. E.

2000-01-01

Results of a calculation of the Doppler broadening of the positron-electron annihilation radiation and positron lifetimes in a large number of elemental defect-free materials are presented. A simple scheme based on the method of superimposed atoms is used for these calculations. Calculated values of the Doppler broadening are compared with experimental data for a number of elemental materials, and qualitative agreement is obtained. These results provide a database which can be used for characterizing materials and identifying impurity-vacancy complexes. (c) 2000 The American Physical Society

Dose-response relationship of cadmium or radiation-induced embryotoxicity in mouse whole embryo culture

International Nuclear Information System (INIS)

Nakashima, Kiyohito; Kawamata, Akitoshi; Matsuoka, Masato; Wakisaka, Takashi; Fujiki, Yoshishige

1988-01-01

Mouse embryos of B6C3F 1 strain were exposed in vitro to 1.2 to 2.2 μM cadmium chloride (Cd) or to 100 to 320 R x-rays, and the effects of the exposure on development were examined after 39 h of culture. Development of embryos was assessed from lethality, formation of the neural tube defect, diameter and protein of yolk sac, crown-rump and head lengths, embryonic protein, and number of somites. Incidence of the neural tube defect increased from 3.4 to 100% by 1.2 to 2.0 μM Cd, while embryo deaths increased from 13.8 to 93.3% by 2.0 to 2.2 μM Cd. Embryonic protein was significantly reduced at the teratogenic range, but the number of somites was only affected by 1.6 to 2.0 μM Cd. X-irradiation at 100 to 320 R induced the neural tube defect in 2.9 to 72.7% of the embryos. An embryolethal effect was observed only at the 320 R dose. Crown-rump and head lengths and embryonic protein were significantly affected at the teratogenic range, but the diameter and protein of yolk sac and number of somites were hardly affected. Cadmium- or radiation-induced response data of both teratogenicity and endpoints indicating inhibition of embryonic development were acceptably fitted to a linear log-probit regression. These regressions suggest that as an estimation of interference in development of embryos, embryonic protein and head length are sensitive endpoints while the number of somites is an insensitive criterion. (author)

Study of defects, radiation damage and implanted gases in solids by field-ion and atom-probe microscopy

International Nuclear Information System (INIS)

Seidman, D.N.; Amano, J.; Wagner, A.

1980-10-01

The ability of the field-ion microscope to image individual atoms has been applied, at Cornell University, to the study of fundamental properties of point defects in irradiated or quenched metals. The capability of the atom probe field-ion microscope to determine the chemistry - that is, the mass-to-charge ratio - of a single ion has been used to investigate the behavior of different implanted species in metals. A brief review is presented of: (1) the basic physical principles of the field-ion and atom-probe microscopes; (2) the many applications of these instruments to the study of defects and radiation damage in solids; and (3) the application of the atom-probe field-ion microscope to the study of the behavior of implanted 3 He and 4 He atoms in tungsten. The paper is heavily referenced so that the reader can pursue his specific research interests in detail

Radiation-Induced Bystander Response: Mechanism and Clinical Implications

Science.gov (United States)

Suzuki, Keiji; Yamashita, Shunichi

2014-01-01

Significance: Absorption of energy from ionizing radiation (IR) to the genetic material in the cell gives rise to damage to DNA in a dose-dependent manner. There are two types of DNA damage; by a high dose (causing acute or deterministic effects) and by a low dose (related to chronic or stochastic effects), both of which induce different health effects. Among radiation effects, acute cutaneous radiation syndrome results from cell killing as a consequence of high-dose exposure. Recent advances: Recent advances in radiation biology and oncology have demonstrated that bystander effects, which are emerged in cells that have never been exposed, but neighboring irradiated cells, are also involved in radiation effects. Bystander effects are now recognized as an indispensable component of tissue response related to deleterious effects of IR. Critical issues: Evidence has indicated that nonapoptotic premature senescence is commonly observed in various tissues and organs. Senesced cells were found to secrete various proteins, including cytokines, chemokines, and growth factors, most of which are equivalent to those identified as bystander factors. Secreted factors could trigger cell proliferation, angiogenesis, cell migration, inflammatory response, etc., which provide a tissue microenvironment assisting tissue repair and remodeling. Future directions: Understandings of the mechanisms and physiological relevance of radiation-induced bystander effects are quite essential for the beneficial control of wound healing and care. Further studies should extend our knowledge of the mechanisms of bystander effects and mode of cell death in response to IR. PMID:24761341

New aspects on the contribution of primary defects in silicon due to long-time degradation of detectors operating in high fields of radiation

International Nuclear Information System (INIS)

Lazanu, Sorina; Lazanu, Ionel

2006-01-01

Full text: Silicon detectors will represent an important option for the next generation of experiments in high energy physics, for astroparticle and nuclear experiments, where the requirements to operate long time in high radiation environments will represent a major problem. After the long-time operation in high radiation fields, the bulk displacement damage produces the following effects at the device level: increase of the leakage current, decrease of the satisfactory Signal/Noise ratio, increase of the effective carrier concentration, and thus of the depletion voltage, decrease of the charge collection efficiency up to unacceptable levels. In this contribution we investigate the new perspective in understanding the fundamental phenomena in silicon and implications for the degradation of the characteristics of detectors given by the consideration of the existence of the new primary defect: fourfold coordinated defect, Si FFCD , with a lower value of the formation energy by comparison with the 'classically' known vacancies and interstitials. Predicted by Goedecker and co-workers, its characteristics were indirectly determined by Lazanu and Lazanu. The correlation between the rate of generation of primary defects, material composition and observable effects is investigated considering different growth technologies and resistivities (up to tens of kΩcm) as time and fluence dependencies. This allows to estimate the expected behaviour of the materials and detectors in concrete environments at the next generations of high energy physics experiments as SLHC or VLHC for example. This new defect could represent the elementary block for new extended defects and in principle it could generate local amorphization of the semiconductor. Its existence and characteristics in other semiconductors is also investigated. (author)

Study by electrical resistivity measurements of the radiation induced defects in gold-copper alloys

International Nuclear Information System (INIS)

Alamo, A.

1983-09-01

Point defect production rate in Cu 3 Au and CuAu ordered and disordered alloys was studied by electrical resistivity measurements, as function of electron energy ranging from 0.4 to 2.5 MeV. The irradiations were performed at 20 K. The production curves are analysed using a displacement model for diatomic materials and the following values are found for the average displacement threshold energies: Esub(d)sup(Cu) approximately 22 eV and Esub(d)sup(Au) approximately 18 eV, for both alloys. Elementary defect migration was examined during isochronal annealing performed after irradiations. A simple type of self-interstitial seems to migrate in the ordered alloys: probably a split-interstitial of Cu-Cu type. Interstitial migration seems to be very difficult and complex in the disordered alloys. Vacancy mobility was detected after recovery at temperature above 300 K and was responsible of an increase of long range order. Fast neutron irradiations at 20 K produce disordering in the initially ordered alloys. Ratios of 38 and 18 antistructure defects per atomic displacement are estimated for Cu 3 Au and CuAu respectively [fr

The study of the identification of minimal defects in radiograph, 2

International Nuclear Information System (INIS)

Senda, Tomio; Hirayama, Kazuo; Yokoyama, Keiji; Nakamura, Kazuo.

1988-01-01

In the first report, it was discussed in terms of the mass on the detectible limit of such minimal defects of cylindrical defect as a representative of ingot-defect and slit defect as a representative of plate-defect respectively which generally appear on the weld joints, using contrast distribution area of defects on the radiograph. In the second report, an experiment is done to vary the contrast of radiograph by dual exposure system and to vary the radiation by rotating photographing in order to investigate the corresponding relation of defectible limit of defect dimension between cylindrical defect and slit defect. (author)

Ionizing radiation induced biological response and its public health implication

International Nuclear Information System (INIS)

Koeteles, Gy.

1994-01-01

Several sources of ionizing radiation exist in natural and artificial environment of humanity. An overview of their biological effects and the biological response of man is present. Emphasize is given to the differences caused by high and low doses. The interrelation of radiology, radiation hygiene and public health is pointed out. Especially, the physical and biological effects of radiation on cells and their responses are discussed in more detail. (R.P.)

Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

International Nuclear Information System (INIS)

Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

1999-01-01

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

The responsibility of the radiation protection expert

International Nuclear Information System (INIS)

Varescon, M.

2008-01-01

After having recalled the two main different types of responsibility in the French law system (civil liability and criminal responsibility), and how criminal law has been gradually introduced in companies, the author analyzes and describes how the radiation protection expert's responsibility is tightly related to that of his employer, and how both can be committed on a disciplinary and criminal level

Point defects in dilute nitride III-N-As and III-N-P

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2006-01-01

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

Creation of point defects in superconductors. A short review

International Nuclear Information System (INIS)

Quere, Yves; Rullier-Albenque, Florence.

1981-11-01

Many experiments have been published concerning the radiation damage in superconductors, but relatively few about the mechanisms of defect creation. A short review is presented of what is known on point defect creation in superconductors either by cold-work or by irradiation

Production and recombination of radiation defects in argon and krypton crystals

International Nuclear Information System (INIS)

Giersberg, E.J.

1981-01-01

Relative changes in the lattice constants of argon and krypton crystals have been measured by X-ray diffraction. As a result X-ray irradiation is found to produce stable defects. The recombination behaviour of these defects can be determined by isochronous and isothermal annealing. The creation of primary defects can be explained by exciton excitation and double-ionisation. (orig.) [de

Evaluation of detector responses to natural environmental and fall-out gamma radiation

International Nuclear Information System (INIS)

Arvela, H.

1988-01-01

Instrument responses to the thorium, uranium and potassium components of the natural environmental as well as the fall-out radiation field were evaluated. The responses to the 137 Cs fall-out radiation field differ by less than 6% from the response at 0.662 MeV, except for that of the NaI scintillator. Differences of more than 30% were found in the responses of two energy compensated instruments to normal natural background radiation and to radiation from fresh fall-out. The best estimate of the terrestrial component of the dose rate measured was obtained by carrying out the following corrections of the measured readings: cosmic ray contribution and internal background subtraction with response correction, including 137 Cs calibration correction. After the Chernobyl accident the dose rate levels due to 137 Cs and 134 Cs fall-out were comparable to the natural background gamma radiation. The responses calculated as well as the results from measurements of the low level environmental exposure levels caused by the Chernobyl fall-out, confirmed the need to take into account the instrument response to natural as well as fall-out radiation fields. (author)

Design of CPW-Fed Antenna with Defected Substrate for Wideband Applications

Directory of Open Access Journals (Sweden)

Amar Sharma

2016-01-01

Full Text Available A CPW-fed defected substrate microstrip antenna is proposed. The proposed antenna shows wideband applications by choosing suitable defected crown shaped substrate. Defected substrate also reduces the size of an antenna. The radiating patch of proposed antenna is taken in the form of extended U-shape. The space around the radiator is utilized by extending the ground plane on both sides of radiator. Simulation of proposed antenna is done on Ansoft’s High Frequency Structure Simulator (HFSS v. 14. Measured results are in good agreement with simulated results. The prototype is taken with dimensions 36 mm × 42 mm × 1.6 mm that achieves good return loss, constant group delay, and good radiation characteristics within the entire operating band from 4.5 to 13.5 GHz (9.0 GHz with 100% impedance bandwidth at 9.0 GHz centre frequency. Thus, the proposed antenna is applicable for C and X band applications.

The effect of electron radiation on thermal and electrophysical properties of n-InP

International Nuclear Information System (INIS)

Nikogosyan, S.K.; Saakyan, V.A.

1989-01-01

The insertion and annealing of radiation-induced defects in n-InP crystals irradiated with 50 MeV electrons are investigated by measuring the thermal conductivity (χ), the electrical conductivity (σ), and the Hall effect (R H ). It is shown that in n-InP crystals additionally to point defects (isolated defects, as well as complexes with impurities) also some complex defects (disordered regions) arise which are annealed at T > 300 0 C. The presence of complexes and disordered regions is responsible for the anomalous behaviour of the temperature dependence of electrical conductivity and Hall mobility. (author)

Peculiarities of the point radiation defects accumulation in the fine- and ultra-disperse metallic media

International Nuclear Information System (INIS)

Aliev, B.A.; Zajkin, Yu.A.; Potapov, A.S.

2004-01-01

Fine-dispersive powders are a samples of solid systems. In which under irradiation the particle surface layers defect structure changes and has mostly an effect on structural transformations. Theoretical calculations and experimental data show, that the increased interstitials atoms concentration near particles surface during irradiation by either electrons or gamma quanta with energy about 1 MeV give rise to intensive pores healing. At the same time as the dense surface layer formation the pores healing leads to the brachiate borders system formation. The borders serve as pathways for accelerated diffusion. Sintering process and a metal recrystallization are stimulating as well. Both processes lead to the ordered super-structure formation which contributes the additional contribution in an improvement of the mechanical properties of a metal. A liner sizes of the ordered net depend on both the powder sizes and the irradiation conditions. The especial interest present a conditions for such superstructure formation (when the particle sizes are becoming so small (∼1 μm), that effect has being resulted on a defect-formation in the whole volume of a powder particle). In the considered case the point radiation defects accumulation kinetics in the metallic particle is analyzed on the ground of the equation system for atomic concentrations both interstitial atoms and vacancies. The numerical solution of this equation system shows, that particles sizes decline leads to considerable micro-pores healing increase and improvement of conditions for net strengthening. In dependence on irradiation conditions (temperature, dose and dose rate) the forming super-structure could have micro- and nano-sizes

Caffeine ameliorates radiation-induced skin reactions in mice but does not influence tumour radiation response

Energy Technology Data Exchange (ETDEWEB)

Hebbar, S.A.; Mitra, A.K.; George, K.C.; Verma, N.C. [Radiation Biology Division, Bhabha Atomic Research Centre, Trombay, Mumbai (India)]. E-mail: ncverma@apsara.barc.ernet.in

2002-03-01

Intramuscular administration of caffeine at a dose of 80 mg kg{sup -1} body weight to the gastrocnemius muscles of Swiss mice 5 min prior to local irradiation (35 Gy) of the leg delayed the progression of radiation-induced skin reactions in such animals. While 90% epilation with reddening of the skin was noted in animals treated with radiation alone, animals pretreated with caffeine suffered only partial hair loss with slight reddening of the skin on the 16th and 20th days post-irradiation. Beyond the 28th day, damage scores in irradiated feet for both the groups were similar (score 3) and remained unchanged until the 32nd day and then decreased and disappeared completely in both treatment groups by the 40th day after irradiation. In addition, the effect of caffeine on the radiation response of a mouse fibrosarcoma was investigated. Results showed that intratumoral administration of caffeine at a dose of 80 mg kg{sup -1} body weight 5 min prior to local exposure of tumours to 10 Gy of {sup 60}Co {gamma}-rays did not influence the response of tumours to radiation. The present study thus showed that although caffeine ameliorated radiation-induced skin reactions in the mouse leg, it did not affect the tumour radiation response, indicating its potential application in cancer radiotherapy. (author)

Radiation-induced creep and swelling

International Nuclear Information System (INIS)

Heald, P.T.

1977-01-01

The physical basis for radiation induced creep and swelling is reviewed. The interactions between the point defects and dislocations are recalled since these interactions are ultimately responsible for the observable deformation phenomena. Both the size misfit interaction and the induced inhomogeneity interaction are considered since the former gives rise to irradiation swelling while the latter, which depends on both internal and external stresses, results in irradiation creep. The defect kinetics leading to the deformation processes are discussed in terms of chemical rate theory. The rate equations for the spatially averaged interstitial and vacancy concentrations are expressed in terms of the microstructural sink strengths and the solution of these equations leads to general expressions for the deformation rates

Physics of radiation effects in crystals

CERN Document Server

Johnson, RA

1986-01-01

``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor ma

SU-E-J-274: Responses of Medulloblastoma Cells to Radiation Dosimetric Parameters in Intensity-Modulated Radiation Therapy

International Nuclear Information System (INIS)

Park, J; Park, J; Rogalla, S; Contag, C; Woo, D; Lee, D; Park, H; Suh, T

2015-01-01

Purpose: To evaluate radiation responses of the medulloblastoma cell line Daoy in intensity-modulated radiation therapy (IMRT), quantitative variations to variable radiation dosimetic parameters were tracked by bioluminescent images (BLIs). Methods: The luciferase and green fluorescent protein positive Daoy cells were cultured on dishes. The medulloblastoma cells irradiated to different dose rate, interval of fractionated doses, field margin and misalignment, and dose uniformity in IMRT were monitored using bioluminescent images. The cultured cells were placed into a dedicated acrylic phantom to deliver intensity-modulated fluences and calculate accurate predicted dose distribution. The radiation with dose rate from 0.5 Gy/min to 15 Gy/min was irradiated by adjusting monitor unit per minute and source-to-surface distances. The intervals of fractionated dose delivery were changed considering the repair time of double strand breaks (DSB) revealed by straining of gamma-H2AX.The effect of non-uniform doses on the cells were visualized by registering dose distributions and BLIs. The viability according to dosimetric parameters was correlated with bioluminescent intensities for cross-check of radiation responses. Results: The DSB and cell responses due to the first fractionated dose delivery significantly affected final tumor control rather than other parameters. The missing tumor volumes due to the smaller field margin than the tumor periphery or field misalignment caused relapse of cell responses on BLIs. The dose rate and gradient had effect on initial responses but could not bring out the distinguishable killing effect on cancer cells. Conclusion: Visualized and quantified bioluminescent images were useful to correlate the dose distributions with spatial radiation effects on cells. This would derive the effective combination of dose delivery parameters and fractionation. Radiation responses in particular IMRT configuration could be reflected to image based-dose re-optimization

MOSFET and MOS capacitor responses to ionizing radiation

Science.gov (United States)

Benedetto, J. M.; Boesch, H. E., Jr.

1984-01-01

The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.

Defect-impurity interactions in ion-implanted metals

International Nuclear Information System (INIS)

Turos, A.

1986-01-01

An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

Dark current spectroscopy of space and nuclear environment induced displacement damage defects in pinned photodiode based CMOS image sensors

International Nuclear Information System (INIS)

Belloir, Jean-Marc

2016-01-01

, proving the applicability of this technique to study the nature of silicon bulk defects using image sensors. In summary, this work advances the understanding of the nature of the radiation-induced defects responsible for the dark current increase in space or nuclear environments. It also leads the way to the design of more advanced dark current prediction models, or to the development of mitigation strategies in order to prevent the formation of the responsible defects or to allow their removal. (author) [fr

Recombination of radiation defects in solid methane: neutron sources and cryo-volcanism on celestial bodies

Science.gov (United States)

Kirichek, O.; Savchenko, E. V.; Lawson, C. R.; Khyzhniy, I. V.; Jenkins, D. M.; Uyutnov, S. A.; Bludov, M. A.; Haynes, D. J.

2018-03-01

Physicochemical properties of solid methane exposed to ionizing radiation have attracted significant interest in recent years. Here we present new trends in the study of radiation effects in solid methane. We particularly focus on relaxation phenomena in solid methane pre-irradiated by energetic neutrons and electron beam. We compare experimental results obtained in the temperature range from 10K to 100K with a model based on the assumption that radiolysis defect recombinations happen in two stages, at two different temperatures. In the case of slow heating up of the solid methane sample, irradiated at 10K, the first wave of recombination occurs around 20K with a further second wave taking place between 50 and 60K. We also discuss the role of the recombination mechanisms in “burp” phenomenon discovered by J. Carpenter in the late 1980s. An understanding of these mechanisms is vital for the designing and operation of solid methane moderators used in advanced neutron sources and could also be a possible explanation for the driving forces behind cryo-volcanism on celestial bodies.

Early transcriptional responses of internalization defective Brucella abortus mutants in professional phagocytes, RAW 264.7.

Science.gov (United States)

Cha, Seung Bin; Lee, Won Jung; Shin, Min Kyoung; Jung, Myung Hwan; Shin, Seung Won; Yoo, An Na; Kim, Jong Wan; Yoo, Han Sang

2013-06-27

Brucella abortus is an intracellular zoonotic pathogen which causes undulant fever, endocarditis, arthritis and osteomyelitis in human and abortion and infertility in cattle. This bacterium is able to invade and replicate in host macrophage instead of getting removed by this defense mechanism. Therefore, understanding the interaction between virulence of the bacteria and the host cell is important to control brucellosis. Previously, we generated internalization defective mutants and analyzed the envelope proteins. The present study was undertaken to evaluate the changes in early transcriptional responses between wild type and internalization defective mutants infected mouse macrophage, RAW 264.7. Both of the wild type and mutant infected macrophages showed increased expression levels in proinflammatory cytokines, chemokines, apoptosis and G-protein coupled receptors (Gpr84, Gpr109a and Adora2b) while the genes related with small GTPase which mediate intracellular trafficking was decreased. Moreover, cytohesin 1 interacting protein (Cytip) and genes related to ubiquitination (Arrdc3 and Fbxo21) were down-regulated, suggesting the survival strategy of this bacterium. However, we could not detect any significant changes in the mutant infected groups compared to the wild type infected group. In summary, it was very difficult to clarify the alterations in host cellular transcription in response to infection with internalization defective mutants. However, we found several novel gene changes related to the GPCR system, ubiquitin-proteosome system, and growth arrest and DNA damages in response to B. abortus infection. These findings may contribute to a better understanding of the molecular mechanisms underlying host-pathogen interactions and need to be studied further.

Adaptive response to high LET radiations

International Nuclear Information System (INIS)

Dam, Annamaria; Bogdandi, E. Noemi; Polonyi, Istvan; Sardy, M. Marta; Balashazy, Imre; Palfalvy, Jozsef

2001-01-01

The biological consequences of exposure to ionizing radiation include gene mutation, chromosome aberrations, cellular transformation and cell death. These effects are attributed to the DNA damaging effects of the irradiation resulting in irreversible changes during DNA replication or during the processing of the DNA damage by enzymatic repair processes. These repair processes could initiate some adaptive mechanisms in the cell, which could lead to radioadaptive response (RAR). Adaptive responses have typically been detected by exposing cells to a low radiation dose (1-50 mGy) and then challenging the cells with a higher dose of radiation (2-4 Gy) and comparing the outcome to that seen with the challenge dose only. For adaptive response to be seen the challenge dose must be delivered within 24 hour of the inducing dose. Radio-adaptation is extensively studied for low LET radiation. Nevertheless, few data are available for high LET radiation at very low doses and dose rate. Our study was aimed to investigate the radioadaptive response to low-dose neutron irradiation by detection of the genotoxic damage i.e.: hprt-mutant colonies induced. Altered protein synthesis was also studied to identify stress proteins may responsible for radio-adaptation. New alpha particle irradiator system was also built up to study the biological effects of low dose alpha irradiation. The experiments were carried out on monolayers of human melanoma and CHO (Chines Hamster Ovary) cells irradiated by neutrons produced in the biological irradiation channel of the Research Reactor of Budapest Neutron Center. Cells were exposed to 0.5-50 mGy neutron doses with dose rates of 1.59-10 mGy/min. The challenge doses of 2-4 Gy gamma rays were administrated within 1-48 hours after priming treatment. The induced mutants at hprt locus were selected by adding 6-thioguanine and allow to grow for 10 days for expression of the phenotype. The protein synthesis was studied by PAGE, the molecular mass of specific

Radiation-induced genomic instability and bystander effects: related inflammatory-type responses to radiation-induced stress and injury? A review.

Science.gov (United States)

Lorimore, S A; Wright, E G

2003-01-01

To review studies of radiation responses in the haemopoietic system in the context of radiation-induced genomic instability, bystander effects and inflammatory-type processes. There is considerable evidence that cells that themselves are not exposed to ionizing radiation but are the progeny of cells irradiated many cell divisions previously may express a high frequency of gene mutations, chromosomal aberrations and cell death. These effects are collectively known as radiation-induced genomic instability. A second untargeted effect results in non-irradiated cells exhibiting responses typically associated with direct radiation exposure but occurs as a consequence of contact with irradiated cells or by receiving soluble signals from irradiated cells. These effects are collectively known as radiation-induced bystander effects. Reported effects include increases or decreases in damage-inducible and stress-related proteins; increases or decreases in reactive oxygen species, cell death or cell proliferation, and induction of mutations and chromosome aberrations. This array of responses is reminiscent of effects mediated by cytokines and other similar regulatory factors that may involve, but do not necessarily require, gap junction-mediated transfer, have multiple inducers and a variety of context-dependent consequences in different cell systems. That chromosomal instability in haemopoietic cells can be induced by an indirect bystander-type mechanism both in vitro and in vivo provides a potential link between these two untargeted effects and there are radiation responses in vivo consistent with the microenvironment contributing secondary cell damage as a consequence of an inflammatory-type response to radiation-induced injury. Intercellular signalling, production of cytokines and free radicals are features of inflammatory responses that have the potential for both bystander-mediated and persisting damage as well as for conferring a predisposition to malignancy. The

Elastic and failure response of imperfect three-dimensional metallic lattices: the role of geometric defects induced by Selective Laser Melting

Science.gov (United States)

Liu, Lu; Kamm, Paul; García-Moreno, Francisco; Banhart, John; Pasini, Damiano

2017-10-01

This paper examines three-dimensional metallic lattices with regular octet and rhombicuboctahedron units fabricated with geometric imperfections via Selective Laser Sintering. We use X-ray computed tomography to capture morphology, location, and distribution of process-induced defects with the aim of studying their role in the elastic response, damage initiation, and failure evolution under quasi-static compression. Testing results from in-situ compression tomography show that each lattice exhibits a distinct failure mechanism that is governed not only by cell topology but also by geometric defects induced by additive manufacturing. Extracted from X-ray tomography images, the statistical distributions of three sets of defects, namely strut waviness, strut thickness variation, and strut oversizing, are used to develop numerical models of statistically representative lattices with imperfect geometry. Elastic and failure responses are predicted within 10% agreement from the experimental data. In addition, a computational study is presented to shed light into the relationship between the amplitude of selected defects and the reduction of elastic properties compared to their nominal values. The evolution of failure mechanisms is also explained with respect to strut oversizing, a parameter that can critically cause failure mode transitions that are not visible in defect-free lattices.

High-dose irradiation induces cell cycle arrest, apoptosis, and developmental defects during Drosophila oogenesis.

Directory of Open Access Journals (Sweden)

Hee Jin Shim

Full Text Available Ionizing radiation (IR treatment induces a DNA damage response, including cell cycle arrest, DNA repair, and apoptosis in metazoan somatic cells. Because little has been reported in germline cells, we performed a temporal analysis of the DNA damage response utilizing Drosophila oogenesis as a model system. Oogenesis in the adult Drosophila female begins with the generation of 16-cell cyst by four mitotic divisions of a cystoblast derived from the germline stem cells. We found that high-dose irradiation induced S and G2 arrests in these mitotically dividing germline cells in a grp/Chk1- and mnk/Chk2-dependent manner. However, the upstream kinase mei-41, Drosophila ATR ortholog, was required for the S-phase checkpoint but not for the G2 arrest. As in somatic cells, mnk/Chk2 and dp53 were required for the major cell death observed in early oogenesis when oocyte selection and meiotic recombination occurs. Similar to the unscheduled DNA double-strand breaks (DSBs generated from defective repair during meiotic recombination, IR-induced DSBs produced developmental defects affecting the spherical morphology of meiotic chromosomes and dorsal-ventral patterning. Moreover, various morphological abnormalities in the ovary were detected after irradiation. Most of the IR-induced defects observed in oogenesis were reversible and were restored between 24 and 96 h after irradiation. These defects in oogenesis severely reduced daily egg production and the hatch rate of the embryos of irradiated female. In summary, irradiated germline cells induced DSBs, cell cycle arrest, apoptosis, and developmental defects resulting in reduction of egg production and defective embryogenesis.

Is There a Dose-Response Relationship for Heart Disease With Low-Dose Radiation Therapy?

Energy Technology Data Exchange (ETDEWEB)

Chung, Eugene [Department of Radiation Oncology, University of Michigan, Ann Arbor, Michigan (United States); Corbett, James R. [Division of Nuclear Medicine, Department of Radiology, University of Michigan, Ann Arbor, Michigan (United States); Moran, Jean M. [Department of Radiation Oncology, University of Michigan, Ann Arbor, Michigan (United States); Griffith, Kent A. [Department of Biostatistics, University of Michigan, Ann Arbor, Michigan (United States); Marsh, Robin B.; Feng, Mary; Jagsi, Reshma; Kessler, Marc L. [Department of Radiation Oncology, University of Michigan, Ann Arbor, Michigan (United States); Ficaro, Edward C. [Division of Nuclear Medicine, Department of Radiology, University of Michigan, Ann Arbor, Michigan (United States); Pierce, Lori J., E-mail: ljpierce@umich.edu [Department of Radiation Oncology, University of Michigan, Ann Arbor, Michigan (United States)

2013-03-15

Purpose: To quantify cardiac radiation therapy (RT) exposure using sensitive measures of cardiac dysfunction; and to correlate dysfunction with heart doses, in the setting of adjuvant RT for left-sided breast cancer. Methods and Materials: On a randomized trial, 32 women with node-positive left-sided breast cancer underwent pre-RT stress single photon emission computed tomography (SPECT-CT) myocardial perfusion scans. Patients received RT to the breast/chest wall and regional lymph nodes to doses of 50 to 52.2 Gy. Repeat SPECT-CT scans were performed 1 year after RT. Perfusion defects (PD), summed stress defects scores (SSS), and ejection fractions (EF) were evaluated. Doses to the heart and coronary arteries were quantified. Results: The mean difference in pre- and post-RT PD was −0.38% ± 3.20% (P=.68), with no clinically significant defects. To assess for subclinical effects, PD were also examined using a 1.5-SD below the normal mean threshold, with a mean difference of 2.53% ± 12.57% (P=.38). The mean differences in SSS and EF before and after RT were 0.78% ± 2.50% (P=.08) and 1.75% ± 7.29% (P=.39), respectively. The average heart Dmean and D95 were 2.82 Gy (range, 1.11-6.06 Gy) and 0.90 Gy (range, 0.13-2.17 Gy), respectively. The average Dmean and D95 to the left anterior descending artery were 7.22 Gy (range, 2.58-18.05 Gy) and 3.22 Gy (range, 1.23-6.86 Gy), respectively. No correlations were found between cardiac doses and changes in PD, SSS, and EF. Conclusions: Using sensitive measures of cardiac function, no clinically significant defects were found after RT, with the average heart Dmean <5 Gy. Although a dose response may exist for measures of cardiac dysfunction at higher doses, no correlation was found in the present study for low doses delivered to cardiac structures and perfusion, SSS, or EF.

Modeling of excimer laser radiation induced defect generation in fluoride phosphate glasses

International Nuclear Information System (INIS)

Natura, U.; Ehrt, D.

2001-01-01

Fluoride phosphate (FP) glasses with low phosphate content are high-transparent in the deep ultraviolet (UV) range and attractive candidates for UV-optics. Their optical properties are complementary to fluoride crystals. The anomalous partial dispersion makes them desirable for optical lens designs to reduce the secondary spectrum. Their UV transmission is limited by trace impurities introduced by raw materials and decreases when exposed to UV-radiation (lamps, lasers). The experiments of the paper published previously in this journal were used in order to separate radiation induced absorption bands in the fluoride phosphate glass FP10. In this paper the generation mechanism of the phosphorus-oxygen related hole center POHC 2 is investigated in detail in glasses of various compositions (various phosphate and impurity contents) in order to predict the transmission loss in case of long-time irradiation. Experiments were carried out using ArF- and KrF-excimer lasers (ns-pulses). POHC 2 generation strongly depends on the phosphate content and on the content of Pb 2+ . A model was developed on these terms. Rate equations are formulated, incorporating the influence of the Pb 2+ -content on the defect generation, a two-step creation term including an energy transfer process and a one-photon bleaching term. This results in a set of coupled nonlinear differential equations. Absorption coefficients and lifetimes of the excited states were calculated as well. Experimental results compared well with the numerical analysis of the theoretical rate equations

A method to adjust radiation dose-response relationships for clinical risk factors

DEFF Research Database (Denmark)

Appelt, Ane Lindegaard; Vogelius, Ivan R

2012-01-01

Several clinical risk factors for radiation induced toxicity have been identified in the literature. Here, we present a method to quantify the effect of clinical risk factors on radiation dose-response curves and apply the method to adjust the dose-response for radiation pneumonitis for patients...

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

Energy Technology Data Exchange (ETDEWEB)

Puzanov, A. S.; Obolenskiy, S. V., E-mail: obolensk@rf.unn.ru; Kozlov, V. A. [Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)

2016-12-15

We analyze the electron transport through the thin base of a GaAs heterojunction bipolar transistor with regard to fluctuations in the spatial distribution of defect clusters induced by irradiation with a fissionspectrum fast neutron flux. We theoretically demonstrate that the homogeneous filling of the working region with radiation-induced defect clusters causes minimum degradation of the dc gain of the heterojunction bipolar transistor.

Health effects of low-dose radiation: Molecular, cellular, and biosystem response

International Nuclear Information System (INIS)

Pollycove, M.; Paperiello, C.J.

1997-01-01

Since the fifties, the prime concern of radiation protection has been protecting DNA from damage. UNSCEAR initiated a focus on biosystem response to damage with its 1994 report, ''Adaptive Responses to Radiation of Cells and Organisms''. The DNA damage-control biosystem is physiologically operative on both metabolic and radiation induced damage, both effected predominantly by free radicals. These adaptive responses are suppressed by high-dose and stimulated by low dose radiation. Increased biosystem efficiently reduces the number of mutations that accumulate during a lifetime and decrease DNA damage-control with resultant aging and malignancy. Several statistically significant epidemiologic studies have shown risk decrements of cancer mortality and mortality from all causes in populations exposed to low-dose radiation. Further biologic and epidemiologic research is needed to establish a valid threshold below which risk decrements occur. (author)

Radiation Dose-Response Model for Locally Advanced Rectal Cancer After Preoperative Chemoradiation Therapy

DEFF Research Database (Denmark)

Appelt, A. L.; Ploen, J.; Vogelius, I. R.

2013-01-01

estimated radiation dose-response curves for various grades of tumor regression after preoperative CRT. Methods and Materials: A total of 222 patients, treated with consistent chemotherapy and radiation therapy techniques, were considered for the analysis. Radiation therapy consisted of a combination...... of external-beam radiation therapy and brachytherapy. Response at the time of operation was evaluated from the histopathologic specimen and graded on a 5-point scale (TRG1-5). The probability of achieving complete, major, and partial response was analyzed by ordinal logistic regression, and the effect...... of including clinical parameters in the model was examined. The radiation dose-response relationship for a specific grade of histopathologic tumor regression was parameterized in terms of the dose required for 50% response, D-50,D-i, and the normalized dose-response gradient, gamma(50,i). Results: A highly...

Influence of surface defects in ZnO thin films on its biosensing response characteristic

Energy Technology Data Exchange (ETDEWEB)

Saha, Shibu; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

2011-09-15

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Influence of surface defects in ZnO thin films on its biosensing response characteristic

International Nuclear Information System (INIS)

Saha, Shibu; Gupta, Vinay

2011-01-01

Highly c-axis oriented zinc oxide (ZnO) thin films deposited by rf magnetron sputtering under varying processing pressure (20-50 mT) in a reactive gas mixture of argon and oxygen were studied for biosensing application. The as-deposited ZnO thin films were in a state of compressive stress having defects related to interstitial Zn and antisite oxygen. Glucose oxidase has been chosen as the model enzyme in the present study and was immobilized on the surface of ZnO thin films deposited on indium tin oxide coated Corning Glass substrate. The studies reveal a correlation between the biosensing characteristic and the presence of defects in the ZnO films. The ZnO films deposited under high pressure (50 mT) are found to be more sensitive for biosensing application due to availability of more surface area for effective immobilization of biomolecules and exhibits a suitable microenvironment with good electron transfer characteristic. The obtained results highlight the importance of desired microstate besides availability of suitable native defects in the ZnO thin film for exhibiting enhanced biosensing response.

Varying stiffness and load distributions in defective ball bearings: Analytical formulation and application to defect size estimation

Science.gov (United States)

Petersen, Dick; Howard, Carl; Prime, Zebb

2015-02-01

This paper presents an analytical formulation of the load distribution and varying effective stiffness of a ball bearing assembly with a raceway defect of varying size, subjected to static loading in the radial, axial and rotational degrees of freedom. The analytical formulation is used to study the effect of the size of the defect on the load distribution and varying stiffness of the bearing assembly. The study considers a square-shaped outer raceway defect centered in the load zone and the bearing is loaded in the radial and axial directions while the moment loads are zero. Analysis of the load distributions shows that as the defect size increases, defect-free raceway sections are subjected to increased static loading when one or more balls completely or partly destress when positioned in the defect zone. The stiffness variations that occur when balls pass through the defect zone are significantly larger and change more rapidly at the defect entrance and exit than the stiffness variations that occur for the defect-free bearing case. These larger, more rapid stiffness variations generate parametric excitations which produce the low frequency defect entrance and exit events typically observed in the vibration response of a bearing with a square-shaped raceway defect. Analysis of the stiffness variations further shows that as the defect size increases, the mean radial stiffness decreases in the loaded radial and axial directions and increases in the unloaded radial direction. The effects of such stiffness changes on the low frequency entrance and exit events in the vibration response are simulated with a multi-body nonlinear dynamic model. Previous work used the time difference between the low frequency entrance event and the high frequency exit event to estimate the size of the defect. However, these previous defect size estimation techniques cannot distinguish between defects that differ in size by an integer number of the ball angular spacing, and a third feature

Modification of Acute Radiation Response in Different Demographic Age Groups

Science.gov (United States)

2017-10-25

greater radiosensitivity. Other studies provided further mechanistic insight into the observed age effect of radiation responses. For example ...DISTRIBUTION A. Approved for public release; distribution is unlimited. October 2017 HDTRA1-14-0003; 0005 Prepared by: Applied ... Research Associates, Inc. 801 N. Quincy Street Suite 700 Arlington, VA 22203 Modification of Acute Radiation Response in Different Demographic Age

Defect kinetics in novel detector materials

CERN Document Server

MacEvoy, B C

2000-01-01

Silicon particle detectors will be used extensively in experiments at the CERN Large Hadron Collider, where unprecedented particle fluences will cause significant atomic displacement damage. We present a model of the evolution of defect concentrations and consequent electrical behaviour in "novel" detector materials with various oxygen and carbon impurity concentrations. The divacancy-oxygen (V/sub 2/O) defect is identified as the cause of changes in device characteristics during /sup 60/Co gamma irradiation. In the case of hadron irradiation changes in detector doping concentration (N/sub eff/) are dominated by cluster defects, in particular the divacancy (V/sub 2/), which exchange charge directly via a non-Shockley-Read- Hall mechanism. The V/sub 2/O defect also contributes to Ne/sub eff/. This defect is more copiously produced during 24 GeV/c proton irradiation than during 1 MeV neutron irradiation on account of the higher vacancy introduction rate, hence the radiation hardness of materials is more sensiti...

Radiation Response of Rhombohedral Oxides

International Nuclear Information System (INIS)

Devanathan, R.; Weber, W.J.; Mitchell, J.N.; Sickafus, K.E.; Nastasi, M.

1997-05-01

The radiation response of three rhombohedral oxides, namely, sapphire (α-Al 2 O 3 ), ilmenite (FeTiO 3 ), and geikielite (MgTiO 3 ), has been examined by irradiating electron transparent samples with 1 MeV Kr(+) and 1.5 MeV Xe(+)ions. The microstructural changes during irradiation were observed in situ in a high-voltage electron microscope using electron diffraction and microscopy. The irradiation conditions were designed to minimize beam heating and chemical effects due to the implanted ion. Of the three oxides studied, ilmenite is the most susceptible to radiation-induced amorphization while sapphire is the least susceptible. In all three materials, the critical temperature for amorphization was below 300 K indicating good room temperature resistance to amorphization by energetic beams

Mechanisms and biological importance of photon-induced bystander responses. Do they have an impact on low-dose radiation responses

International Nuclear Information System (INIS)

Tomita, Masanori; Maeda, Munetoshi

2015-01-01

Elucidating the biological effect of low linear energy transfer (LET), low-dose and/or low-dose-rate ionizing radiation is essential in ensuring radiation safety. Over the past two decades, non-targeted effects, which are not only a direct consequence of radiation-induced initial lesions produced in cellular DNA but also of intra- and inter-cellular communications involving both targeted and non-targeted cells, have been reported and are currently defining a new paradigm in radiation biology. These effects include radiation-induced adaptive response, low-dose hypersensitivity, genomic instability, and radiation-induced bystander response (RIBR). RIBR is generally defined as a cellular response that is induced in non-irradiated cells that receive bystander signals from directly irradiated cells. RIBR could thus play an important biological role in low-dose irradiation conditions. However, this suggestion was mainly based on findings obtained using high-LET charged-particle radiations. The human population (especially the Japanese, who are exposed to lower doses of radon than the world average) is more frequently exposed to low-LET photons (X-rays or γ-rays) than to high-LET charged-particle radiation on a daily basis. There are currently a growing number of reports describing a distinguishing feature between photon-induced bystander response and high-LET RIBR. In particular, photon-induced by-stander response is strongly influenced by irradiation dose, the irradiated region of the targeted cells, and p53 status. The present review focuses on the photon-induced bystander response, and discusses its impact on the low-dose radiation effect. (author)

Macrophage biology plays a central role during ionizing radiation-elicited tumor response

Directory of Open Access Journals (Sweden)

Qiuji Wu

2017-08-01

Full Text Available Radiation therapy is one of the major therapeutic modalities for most solid tumors. The anti-tumor effect of radiation therapy consists of the direct tumor cell killing, as well as the modulation of tumor microenvironment and the activation of immune response against tumors. Radiation therapy has been shown to promote immunogenic cells death, activate dendritic cells and enhance tumor antigen presentation and anti-tumor T cell activation. Radiation therapy also programs innate immune cells such as macrophages that leads to either radiosensitization or radioresistance, according to different tumors and different radiation regimen studied. The mechanisms underlying radiation-induced macrophage activation remain largely elusive. Various molecular players such as NF-κB, MAPKs, p53, reactive oxygen species, inflammasomes have been involved in these processes. The skewing to a pro-inflammatory phenotype thus results in the activation of anti-tumor immune response and enhanced radiotherapy effect. Therefore, a comprehensive understanding of the mechanism of radiation-induced macrophage activation and its role in tumor response to radiation therapy is crucial for the development of new therapeutic strategies to enhance radiation therapy efficacy.

Optical Properties of Nickel(ii) and Radiation Defects in Magnesium-Fluoride and Manganese-Fluoride

Science.gov (United States)

Feuerhelm, Leonard Norman

1980-12-01

Scope and Method of Study. A study has been made of the radiation defects in pure MgF(,2) by observating the polarized absorption, luminescence, and excitation spectra in electron-irradiated MgF(,2). Additionally, studies of the absorption, emission, excitation, and temperature dependence of the lifetimes of transitions in nickel-doped MgF(,2) and MnF(,2) have been accomplished, as well as the observation of radiation effects on these crystals. Findings and Conclusions. The absorption band at about 320 nm in irradiated MgF(,2) is identified to be due to the F(,2)(D(,2h)) center, and to have an emission at about 450 nm. Analysis of the temperature dependence of this band indicates a dominant phonon mode of 255 cm(' -1) for the excited state. The F(,2)(C(,1)) center is identified with an absorption of about 360 nm and an emission of 410 nm. An absorption peak at 300 nm, for which no corresponding emission has been found, is tentatively identified to be the F(,3)-center, and to have a dominant phonon mode of 255 cm('-1). The temperature dependence of the lifetimes of transitions in nickel-doped MgF(,2) have been analyzed by the quantum mechanical single configuration coordinate model of Struck and Fonger, and a complete configuration coordinate model has been made for this crystal. Similar studies have been made in MnF(,2):Ni, but energy transfer between Mn('2+) ions and Ni('2+) ions prevents completion of the complete model. Energy transfer in this crystal was studied, with the finding that a gain of about 2 in luminescence output was possible for excitation in the visible region (400-600 nm) as compared with MgF(,2):Ni. The effects of radiation upon the Ni('2+) transitions in these crystals were studied with the finding that no observable change occurred in the Ni('2+) transitions with radiation, although other radiation effects were noted in the crystal.

Reconstruction of road defects and road roughness classification using vehicle responses with artificial neural networks simulation

CSIR Research Space (South Africa)

Ngwangwa, HM

2010-04-01

Full Text Available -1 Journal of Terramechanics Volume 47, Issue 2, April 2010, Pages 97-111 Reconstruction of road defects and road roughness classification using vehicle responses with artificial neural networks simulation H.M. Ngwangwaa, P.S. Heynsa, , , F...

Cellular Response to Ionizing Radiation: A MicroRNA Story

Science.gov (United States)

Halimi, Mohammad; Asghari, S. Mohsen; Sariri, Reyhaneh; Moslemi, Dariush; Parsian, Hadi

2012-01-01

MicroRNAs (miRNAs) represent a class of small non-coding RNA molecules that regulate gene expression at the post-transcriptional level. They play a crucial role in diverse cellular pathways. Ionizing radiation (IR) is one of the most important treatment protocols for patients that suffer from cancer and affects directly or indirectly cellular integration. Recently it has been discovered that microRNA-mediated gene regulation interferes with radio-related pathways in ionizing radiation. Here, we review the recent discoveries about miRNAs in cellular response to IR. Thoroughly understanding the mechanism of miRNAs in radiation response, it will be possible to design new strategies for improving radiotherapy efficiency and ultimately cancer treatment. PMID:24551775

Ionizing radiation, antioxidant response and oxidative damage: A meta-analysis

Energy Technology Data Exchange (ETDEWEB)

Einor, D., E-mail: daniel@einor.com [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); Bonisoli-Alquati, A., E-mail: andreabonisoli@gmail.com [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); School of Renewable Natural Resources, Louisiana State University AgCenter, Baton Rouge, LA 70803 (United States); Costantini, D., E-mail: davidcostantini@libero.it [Department of Biology, University of Antwerp, Wilrijk, B-2610, Antwerp (Belgium); Mousseau, T.A., E-mail: mousseau@sc.edu [Department of Biological Sciences, University of South Carolina, Columbia, SC 29208 (United States); Faculty of Bioscience and Biotechnology, Chubu University, Kasugai (Japan); Møller, A.P., E-mail: anders.moller@u-psud.fr [Laboratoire d' Ecologie, Systématique et Evolution, CNRS UMR 8079, Université Paris-Sud, Bâtiment 362, F-91405 Orsay Cedex (France)

2016-04-01

One mechanism proposed as a link between exposure to ionizing radiation and detrimental effects on organisms is oxidative damage. To test this hypothesis, we surveyed the scientific literature on the effects of chronic low-dose ionizing radiation (LDIR) on antioxidant responses and oxidative damage. We found 40 publications and 212 effect sizes for antioxidant responses and 288 effect sizes for effects of oxidative damage. We performed a meta-analysis of signed and unsigned effect sizes. We found large unsigned effects for both categories (0.918 for oxidative damage; 0.973 for antioxidant response). Mean signed effect size weighted by sample size was 0.276 for oxidative damage and − 0.350 for antioxidant defenses, with significant heterogeneity among effects for both categories, implying that ionizing radiation caused small to intermediate increases in oxidative damage and small to intermediate decreases in antioxidant defenses. Our estimates are robust, as shown by very high fail-safe numbers. Species, biological matrix (tissue, blood, sperm) and age predicted the magnitude of effects for oxidative damage as well as antioxidant response. Meta-regression models showed that effect sizes for oxidative damage varied among species and age classes, while effect sizes for antioxidant responses varied among species and biological matrices. Our results are consistent with the description of mechanisms underlying pathological effects of chronic exposure to LDIR. Our results also highlight the importance of resistance to oxidative stress as one possible mechanism associated with variation in species responses to LDIR-contaminated areas. - Highlights: • There is interest in variation in metabolic effects of chronic low-dose ionizing radiation • A random effect meta-analysis of effect sizes of radioactive contamination was performed • We found significant effects of radiation on oxidative damage and antioxidant response • We found significant heterogeneity among

System of medical response to radiation emergency after a terror attack in China

International Nuclear Information System (INIS)

Liu, Y.; Wang, Z.

2005-01-01

Full text: Nuclear or radiological accident is an unintended or unexpected event occurring with a radiation source or during a practice involving ionizing radiation, which may result in significant human exposure and/or material damage. Recent events involving terrorist activities have focused attention on the radiological threats. The full spectrum of radiological threats from terrorist spans the deliberate dispersal of radioactive material to the detonation of a nuclear weapon. While the most likely threat is the dispersal of radioactive materials, the use of a crude nuclear weapon against a major city cannot be dismissed. Radiological incident response requires functions similar to non-radiological incident response. Radiation emergency system in China has been established for radiological emergency preparedness and response. National coordination committee of radiation emergency has been setup in 1994, which consist of 17 ministries. The ministry is responsible for the medical assistance for radiation emergency. Chinese Center for Medical Response to Radiation Emergency (CCMRRE) was established in 1992, based on the National Institute for Radiological Protection, China CDC (NIRP, China CDC). The CCMRRE has been as one liaison institutes of WHO/REMPAN and functions as a national and professional institute for medical assistance in radiation accidents and terrorist events involving radioactive material. Under Provincial Committee of Radiation Emergency, there are local organizations of medical assistance in radiation emergency. The organizations carry out the first aid, regional clinic treatment, radiation protection and radiation monitory in nuclear accidents and radiological accidents. (author)

International conference on defects in insulating crystals

International Nuclear Information System (INIS)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

Effect of radiation induced defects and incompatibility elastic stresses on the diffusion of ion implantated boron in silicon at the pulse annealing

International Nuclear Information System (INIS)

Stel'makh, V.F.; Suprun-Belevich, Yu.R.; Chelyadinskij, A.R.

1987-01-01

For determination of radiation defects effect on diffusion of the implanted boron in silicon at the pulse annealing, silicon crystals, implanted with boron, preliminary irradiated by silicon ions of different flows for checked defects implantation, were investigated. Silicon crystals additionally implanted by Ge + ions were investigated to research the effect of the incompatibility elastic stresses, emerging in implanted structures due to lattice periods noncoincidence in matrix and alloyed layers, on implanted boron diffusion. It is shown, that abnormally high values of boron diffusion coefficients in silicon at the pulse annealing are explained by silicon interstitial atom participation in redistribution of diffusing boron atoms by two diffusion channels - interstitial and vacation - and by incompatibility elastic stresses effect on diffusion

A novel approach to secondary defect reduction in separation by implantation of oxygen (SIMOX) material

Energy Technology Data Exchange (ETDEWEB)

Ellingboe, S.L.; Ridgway, M.C. [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1993-12-31

The formation of a buried SiO{sub 2} layer in Si for increased radiation hardness, dielectric isolation, and/or higher operating speeds in Si devices has been studied extensively. In the present report, a novel method for improving the final defect structure of SIMOX material is demonstrated for the first time. The concept of ion-beam defect-engineering (IBDE) introduced by Wang et al has been utilised. If defects are introduced at a depth R{sub 1} by irradiation with energetic ions into samples which were previously damaged at a depth R{sub 2}, it is possible to alter the properties of the defects at R{sub 2}, reduce or eliminate damage at R{sub 2}, and/or create gettering sites for defects at R{sub 1} . To elucidate the mechanisms responsible for the secondary defect reduction in annealed SIMOX material, unannealed samples were implanted with Si ions at various energies, while keeping the nuclear energy deposition constant at two depths. It was observed that after annealing, even greater changes in the defect structure are evident. It has been demonstrated that pre-anneal Si irradiation in O-implanted Si can reduce secondary defect formation. Both the depth and amount of damage created are crucial to the success of the Si implantation. 5 refs., 1 tab., 2 figs.

A novel approach to secondary defect reduction in separation by implantation of oxygen (SIMOX) material

Energy Technology Data Exchange (ETDEWEB)

Ellingboe, S L; Ridgway, M C [Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences

1994-12-31

The formation of a buried SiO{sub 2} layer in Si for increased radiation hardness, dielectric isolation, and/or higher operating speeds in Si devices has been studied extensively. In the present report, a novel method for improving the final defect structure of SIMOX material is demonstrated for the first time. The concept of ion-beam defect-engineering (IBDE) introduced by Wang et al has been utilised. If defects are introduced at a depth R{sub 1} by irradiation with energetic ions into samples which were previously damaged at a depth R{sub 2}, it is possible to alter the properties of the defects at R{sub 2}, reduce or eliminate damage at R{sub 2}, and/or create gettering sites for defects at R{sub 1} . To elucidate the mechanisms responsible for the secondary defect reduction in annealed SIMOX material, unannealed samples were implanted with Si ions at various energies, while keeping the nuclear energy deposition constant at two depths. It was observed that after annealing, even greater changes in the defect structure are evident. It has been demonstrated that pre-anneal Si irradiation in O-implanted Si can reduce secondary defect formation. Both the depth and amount of damage created are crucial to the success of the Si implantation. 5 refs., 1 tab., 2 figs.

Response of radiation monitors for ambient dose equivalent, H*(10)

International Nuclear Information System (INIS)

Grecco, Claudio Henrique dos Santos

2001-01-01

Radiation monitors are used all over the world to evaluate if places with presence of ionising radiation present safe conditions for people. Radiation monitors should be tested according to international or national standards in order to be qualified for use. This work describes a methodology and procedures to evaluate the energy and angular responses of any radiation monitor for ambient dose equivalent, H*(10), according to the recommendations of ISO and IEC standards. The methodology and the procedures were applied to the Monitor Inteligente de Radiacao MIR 7026, developed by the Instituto em Engenharia Nuclear (IEN), to evaluate and to adjust its response for H*(10), characterizing it as an ambient dose equivalent meter. The tests were performed at the Laboratorio Nacional de Metrologia das Radiacoes Ionizantes (LNMRI), at Instituto de Radioprotecao e Dosimetria (IRD), and results showed that the Monitor Inteligente de Radiacao MIR 7026 can be used as an EI*(10) meter, in accordance to the IEC 60846 standard requirements. The overall estimated uncertainty for the determination of the MIR 7026 response, in all radiation qualities used in this work, was 4,5 % to a 95 % confidence limit. (author)

Thermoluminescence response of a mixed ternary alkali halide crystals exposed to gamma rays

International Nuclear Information System (INIS)

Rodriguez M, R.; Perez S, R.; Vazquez P, G.; Riveros, H.; Gonzalez M, P.

2014-08-01

Ionic crystals, mainly alkali halide crystals have been the subject of intense research for a better understanding of the luminescence properties of defects induced by ionizing radiation. The defects in crystals can be produced in appreciable concentration due to elastic stresses, radiation, and addition of impurities. These defects exhibit remarkable thermoluminescence properties. This work is concerned with the Tl properties of a ternary alkali halide crystal after being irradiated with gamma and beta rays. It has been found that the Tl glow peak of the crystal follows a rule of average associated to the Tl Temperatures of the components of the mixture, similarly to the response of europium doped binary mixed crystals KCl x KBr 1-x and KBr x RbBr 1-x . (Author)

Repair of radiation damage in mammalian cells

Energy Technology Data Exchange (ETDEWEB)

Setlow, R.B.

1981-01-01

The responses, such as survival, mutation, and carcinogenesis, of mammalian cells and tissues to radiation are dependent not only on the magnitude of the damage to macromolecular structures - DNA, RNA, protein, and membranes - but on the rates of macromolecular syntheses of cells relative to the half-lives of the damages. Cells possess a number of mechanisms for repairing damage to DNA. If the repair systems are rapid and error free, cells can tolerate much larger doses than if repair is slow or error prone. It is important to understand the effects of radiation and the repair of radiation damage because there exist reasonable amounts of epidemiological data that permits the construction of dose-response curves for humans. The shapes of such curves or the magnitude of the response will depend on repair. Radiation damage is emphasized because: (a) radiation dosimetry, with all its uncertainties for populations, is excellent compared to chemical dosimetry; (b) a number of cancer-prone diseases are known in which there are defects in DNA repair and radiation results in more chromosomal damage in cells from such individuals than in cells from normal individuals; (c) in some cases, specific radiation products in DNA have been correlated with biological effects, and (d) many chemical effects seem to mimic radiation effects. A further reason for emphasizing damage to DNA is the wealth of experimental evidence indicating that damages to DNA can be initiating events in carcinogenesis.

Repair of radiation damage in mammalian cells

International Nuclear Information System (INIS)

Setlow, R.B.

1981-01-01

The responses, such as survival, mutation, and carcinogenesis, of mammalian cells and tissues to radiation are dependent not only on the magnitude of the damage to macromolecular structures - DNA, RNA, protein, and membranes - but on the rates of macromolecular syntheses of cells relative to the half-lives of the damages. Cells possess a number of mechanisms for repairing damage to DNA. If the repair systems are rapid and error free, cells can tolerate much larger doses than if repair is slow or error prone. It is important to understand the effects of radiation and the repair of radiation damage because there exist reasonable amounts of epidemiological data that permits the construction of dose-response curves for humans. The shapes of such curves or the magnitude of the response will depend on repair. Radiation damage is emphasized because: (a) radiation dosimetry, with all its uncertainties for populations, is excellent compared to chemical dosimetry; (b) a number of cancer-prone diseases are known in which there are defects in DNA repair and radiation results in more chromosomal damage in cells from such individuals than in cells from normal individuals; (c) in some cases, specific radiation products in DNA have been correlated with biological effects, and (d) many chemical effects seem to mimic radiation effects. A further reason for emphasizing damage to DNA is the wealth of experimental evidence indicating that damages to DNA can be initiating events in carcinogenesis

International conference on defects in insulating crystals

Energy Technology Data Exchange (ETDEWEB)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

Fundamental aspects on ion-beam surface modification: defect production and migration processes

International Nuclear Information System (INIS)

Rehn, L.E.; Averback, R.S.; Okamoto, P.R.

1984-09-01

Ion-beam modification of metals is generating increasing scientific interest not only because it has exciting technological potential, but also because it has raised fundamental questions concerning radiation-induced diffusion processes. In addition to the implanted species, several defect production and migration mechanisms contribute to changes in the near-surface composition of an alloy during ion bombardment, e.g., atoms exchange positions via displacements and replacement sequences; preferential sputtering effects arise; radiation-enhanced diffusion and radiation-induced segregation occur. The latter two defect migration mechanisms are of particular significance since they can alter the composition to depths which are much greater than the implanted ion range. By altering various parameters such as irradiation temperature, ion mass, energy, and current density, and initial alloying distributions, a rich variety of near-surface composition profiles can be created. We have utilized changes in ion mass and energy, and irradiation temperature to distinguish defect production from defect migration effects. Experimental results are presented which provide a guide to the relative efficiencies of different mechanisms under various irradiation conditions. 46 references

The response of film badge dosemeters to high energy photon radiation

International Nuclear Information System (INIS)

Playle, T.S.

1988-12-01

The sites of the earlier magnox reactor power stations at Berkeley and Bradwell in the United Kingdom are subject to 6 MeV photon radiation from the coolant gas. Since 1966 the Central Electricity Generating Board has included in its film badge personal dosimetry procedures an algorithm for applying a correction for over-response to high energy photon radiation. The correction is based on laboratory irradiations using a source of pure 6 MeV photon radiation. Recently, the opportunity arose to evaluate the response of the film badges at locations around the Berkeley reactors where spectrum-dependent dose equivalent rates had been measured. This report compares the response of the film badge in these characterised radiation environments with the response measured in the calibration laboratory. It is concluded that in the location where measurements were made, the high energy enhancement of measured dose was obscured by the effects of low energy scattered radiation, and it is considered that this will be the case for all practical situations on the power station site. There is therefore no advantage in using the 6 MeV correction factors for routine film badge dosimetry in these locations. (author)

Simulation of radiation-induced defects

CERN Document Server

Peltola, Timo

2015-09-14

Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics accelerator at CERN, Geneva. The foreseen upgrade of the LHC to its high luminosity (HL) phase (HL-LHC scheduled for 2023), will enable the use of maximal physics potential of the facility. After 10 years of operation the expected fluence will expose the tracking systems at HL-LHC to a radiation environment that is beyond the capacity of the present system design. Thus, for the required upgrade of the all-silicon central trackers extensive measurements and simulation studies for silicon sensors of different designs and materials with sufficient radiation tolerance have been initiated within the RD50 Collaboration. Supplementing measurements, simulations are in vital role for e.g. device structure optimization or predicting the electric fields and trapping in the silicon...

Local defect resonance for sensitive non-destructive testing

Science.gov (United States)

Adebahr, W.; Solodov, I.; Rahammer, M.; Gulnizkij, N.; Kreutzbruck, M.

2016-02-01

Ultrasonic wave-defect interaction is a background of ultrasound activated techniques for imaging and non-destructive testing (NDT) of materials and industrial components. The interaction, primarily, results in acoustic response of a defect which provides attenuation and scattering of ultrasound used as an indicator of defects in conventional ultrasonic NDT. The derivative ultrasonic-induced effects include e.g. nonlinear, thermal, acousto-optic, etc. responses also applied for NDT and defect imaging. These secondary effects are normally relatively inefficient so that the corresponding NDT techniques require an elevated acoustic power and stand out from conventional ultrasonic NDT counterparts for their specific instrumentation particularly adapted to high-power ultrasonic. In this paper, a consistent way to enhance ultrasonic, optical and thermal defect responses and thus to reduce an ultrasonic power required is suggested by using selective ultrasonic activation of defects based on the concept of local defect resonance (LDR). A strong increase in vibration amplitude at LDR enables to reliably detect and visualize the defect as soon as the driving ultrasonic frequency is matched to the LDR frequency. This also provides a high frequency selectivity of the LDR-based imaging, i.e. an opportunity of detecting a certain defect among a multitude of other defects in material. Some examples are shown how to use LDR in non-destructive testing techniques, like vibrometry, ultrasonic thermography and shearography in order to enhance the sensitivity of defect visualization.

Genetic and epigenetic features in radiation sensitivity. Part I: Cell signalling in radiation response

International Nuclear Information System (INIS)

Bourguignon, Michel H.; Gisone, Pablo A.; Perez, Maria R.; Michelin, Severino; Dubner, Diana; Giorgio, Marina di; Carosella, Edgardo D.

2005-01-01

Recent progress especially in the field of gene identification and expression has attracted greater attention to genetic and epigenetic susceptibility to cancer, possibly enhanced by ionising radiation. It has been proposed that the occurrence and severity of the adverse reactions to radiation therapy are also influenced by such genetic susceptibility. This issue is especially important for radiation therapists since hypersensitive patients may suffer from adverse effects in normal tissues following standard radiation therapy, while normally sensitive patients could receive higher doses of radiation offering a better likelihood of cure for malignant tumours. This paper, the first of two parts, reviews the main mechanisms involved in cell response to ionising radiation. DNA repair machinery and cell signalling pathways are considered and their role in radiosensitivity is analysed. The implication of non-targeted and delayed effects in radiosensitivity is also discussed. (orig.)

Tumor radiation responses and tumor oxygenation in aging mice

International Nuclear Information System (INIS)

Rockwell, S.

1989-01-01

EMT6 mouse mammary tumors transplanted into aging mice are less sensitive to radiation than tumors growing in young adult animals. The experiments reported here compare the radiation dose-response curves defining the survivals of tumor cells in aging mice and in young adult mice. Cell survival curves were assessed in normal air-breathing mice and in mice asphyxiated with N 2 to produce uniform hypoxia throughout the tumors. Analyses of survival curves revealed that 41% of viable malignant cells were severely hypoxic in tumors in aging mice, while only 19% of the tumor cells in young adult animals were radiobiologically hypoxic. This did not appear to reflect anaemia in the old animals. Treatment of aging animals with a perfluorochemical emulsion plus carbogen (95% O 2 /5% CO 2 ) increased radiation response of the tumors, apparently by improving tumor oxygenation and decreasing the number of severely hypoxic, radiation resistant cells in the tumors. (author)

21 CFR 1003.2 - Defect in an electronic product.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Defect in an electronic product. 1003.2 Section... electronic product. For the purpose of this part, an electronic product shall be considered to have a defect which relates to the safety of use by reason of the emission of electronic product radiation if: (a) It...

Preoperative Single-Fraction Partial Breast Radiation Therapy: A Novel Phase 1, Dose-Escalation Protocol With Radiation Response Biomarkers

Energy Technology Data Exchange (ETDEWEB)

Horton, Janet K., E-mail: janet.horton@duke.edu [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); Blitzblau, Rachel C.; Yoo, Sua [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); Geradts, Joseph [Department of Pathology, Duke University Medical Center, Durham, North Carolina (United States); Chang, Zheng [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); Baker, Jay A. [Department of Radiology, Duke University Medical Center, Durham, North Carolina (United States); Georgiade, Gregory S. [Department of Surgery, Duke University Medical Center, Durham, North Carolina (United States); Chen, Wei [Department of Bioinformatics: Duke Cancer Institute, Duke University Medical Center, Durham, North Carolina (United States); Siamakpour-Reihani, Sharareh; Wang, Chunhao [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); Broadwater, Gloria [Department of Biostatistics: Duke Cancer Institute, Duke University Medical Center, Durham, North Carolina (United States); Groth, Jeff [Department of Pathology, Duke University Medical Center, Durham, North Carolina (United States); Palta, Manisha; Dewhirst, Mark [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); Barry, William T. [Department of Biostatistics and Bioinformatics, Duke University Medical Center, Durham, North Carolina (United States); Biostatistics and Computational Biology, Dana-Farber Cancer Institute, Boston, Massachusetts (United States); Duffy, Eileen A. [Department of Radiation Oncology, Duke University Medical Center, Durham, North Carolina (United States); and others

2015-07-15

Purpose: Women with biologically favorable early-stage breast cancer are increasingly treated with accelerated partial breast radiation (PBI). However, treatment-related morbidities have been linked to the large postoperative treatment volumes required for external beam PBI. Relative to external beam delivery, alternative PBI techniques require equipment that is not universally available. To address these issues, we designed a phase 1 trial utilizing widely available technology to 1) evaluate the safety of a single radiation treatment delivered preoperatively to the small-volume, intact breast tumor and 2) identify imaging and genomic markers of radiation response. Methods and Materials: Women aged ≥55 years with clinically node-negative, estrogen receptor–positive, and/or progesterone receptor–positive HER2−, T1 invasive carcinomas, or low- to intermediate-grade in situ disease ≤2 cm were enrolled (n=32). Intensity modulated radiation therapy was used to deliver 15 Gy (n=8), 18 Gy (n=8), or 21 Gy (n=16) to the tumor with a 1.5-cm margin. Lumpectomy was performed within 10 days. Paired pre- and postradiation magnetic resonance images and patient tumor samples were analyzed. Results: No dose-limiting toxicity was observed. At a median follow-up of 23 months, there have been no recurrences. Physician-rated cosmetic outcomes were good/excellent, and chronic toxicities were grade 1 to 2 (fibrosis, hyperpigmentation) in patients receiving preoperative radiation only. Evidence of dose-dependent changes in vascular permeability, cell density, and expression of genes regulating immunity and cell death were seen in response to radiation. Conclusions: Preoperative single-dose radiation therapy to intact breast tumors is well tolerated. Radiation response is marked by early indicators of cell death in this biologically favorable patient cohort. This study represents a first step toward a novel partial breast radiation approach. Preoperative radiation should

Preoperative Single-Fraction Partial Breast Radiation Therapy: A Novel Phase 1, Dose-Escalation Protocol With Radiation Response Biomarkers

International Nuclear Information System (INIS)

Horton, Janet K.; Blitzblau, Rachel C.; Yoo, Sua; Geradts, Joseph; Chang, Zheng; Baker, Jay A.; Georgiade, Gregory S.; Chen, Wei; Siamakpour-Reihani, Sharareh; Wang, Chunhao; Broadwater, Gloria; Groth, Jeff; Palta, Manisha; Dewhirst, Mark; Barry, William T.; Duffy, Eileen A.

2015-01-01

Purpose: Women with biologically favorable early-stage breast cancer are increasingly treated with accelerated partial breast radiation (PBI). However, treatment-related morbidities have been linked to the large postoperative treatment volumes required for external beam PBI. Relative to external beam delivery, alternative PBI techniques require equipment that is not universally available. To address these issues, we designed a phase 1 trial utilizing widely available technology to 1) evaluate the safety of a single radiation treatment delivered preoperatively to the small-volume, intact breast tumor and 2) identify imaging and genomic markers of radiation response. Methods and Materials: Women aged ≥55 years with clinically node-negative, estrogen receptor–positive, and/or progesterone receptor–positive HER2−, T1 invasive carcinomas, or low- to intermediate-grade in situ disease ≤2 cm were enrolled (n=32). Intensity modulated radiation therapy was used to deliver 15 Gy (n=8), 18 Gy (n=8), or 21 Gy (n=16) to the tumor with a 1.5-cm margin. Lumpectomy was performed within 10 days. Paired pre- and postradiation magnetic resonance images and patient tumor samples were analyzed. Results: No dose-limiting toxicity was observed. At a median follow-up of 23 months, there have been no recurrences. Physician-rated cosmetic outcomes were good/excellent, and chronic toxicities were grade 1 to 2 (fibrosis, hyperpigmentation) in patients receiving preoperative radiation only. Evidence of dose-dependent changes in vascular permeability, cell density, and expression of genes regulating immunity and cell death were seen in response to radiation. Conclusions: Preoperative single-dose radiation therapy to intact breast tumors is well tolerated. Radiation response is marked by early indicators of cell death in this biologically favorable patient cohort. This study represents a first step toward a novel partial breast radiation approach. Preoperative radiation should

Metformin: A Novel Biological Modifier of Tumor Response to Radiation Therapy

International Nuclear Information System (INIS)

Koritzinsky, Marianne

2015-01-01

Over the last decade, evidence has emerged to support a role for the antidiabetic drug metformin in the prevention and treatment of cancer. In particular, recent studies demonstrate that metformin enhances tumor response to radiation in experimental models, and retrospective analyses have shown that diabetic cancer patients treated with radiation therapy have improved outcomes if they take metformin to control their diabetes. Metformin may therefore be of utility for nondiabetic cancer patients treated with radiation therapy. The purpose of this review is to examine the data pertaining to an interaction between metformin and radiation, highlighting the essential steps needed to advance our current knowledge. There is also a focus on key biomarkers that should accompany prospective clinical trials in which metformin is being examined as a modifying agent with radiation therapy. Existing evidence supports that the mechanism underlying the ability of metformin to enhance radiation response is multifaceted, and includes direct radiosensitization as well as a reduction in tumor stem cell fraction, proliferation, and tumor hypoxia. Interestingly, metformin may enhance radiation response specifically in certain genetic backgrounds, such as in cells with loss of the tumor suppressors p53 and LKB1, giving rise to a therapeutic ratio and potential predictive biomarkers

Metformin: A Novel Biological Modifier of Tumor Response to Radiation Therapy

Energy Technology Data Exchange (ETDEWEB)

Koritzinsky, Marianne, E-mail: mkoritzi@uhnresearch.ca

2015-10-01

Over the last decade, evidence has emerged to support a role for the antidiabetic drug metformin in the prevention and treatment of cancer. In particular, recent studies demonstrate that metformin enhances tumor response to radiation in experimental models, and retrospective analyses have shown that diabetic cancer patients treated with radiation therapy have improved outcomes if they take metformin to control their diabetes. Metformin may therefore be of utility for nondiabetic cancer patients treated with radiation therapy. The purpose of this review is to examine the data pertaining to an interaction between metformin and radiation, highlighting the essential steps needed to advance our current knowledge. There is also a focus on key biomarkers that should accompany prospective clinical trials in which metformin is being examined as a modifying agent with radiation therapy. Existing evidence supports that the mechanism underlying the ability of metformin to enhance radiation response is multifaceted, and includes direct radiosensitization as well as a reduction in tumor stem cell fraction, proliferation, and tumor hypoxia. Interestingly, metformin may enhance radiation response specifically in certain genetic backgrounds, such as in cells with loss of the tumor suppressors p53 and LKB1, giving rise to a therapeutic ratio and potential predictive biomarkers.

First-principles study of point defects in CePO{sub 4} monazite

Energy Technology Data Exchange (ETDEWEB)

Yi, Yong; Zhao, Xiaofeng [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Teng, Yuancheng, E-mail: tyc239@163.com [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Bi, Beng [Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Lili [Institute of Computer Application, China Academy of Engineering Physics, Mianyang 621900 (China); Wu, Lang; Zhang, Kuibao [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

2016-12-15

CePO{sub 4} monazite is an important radiation-resistant material that may act as a potential minor actinides waste form. Here, we present the results of the calculations for the basic radiation defect modellings in CePO{sub 4} crystals, along with the examination of their defect formation energies and effect of the defect concentrations. This study focused on building a fully-relaxed CePO{sub 4} model with the step iterative optimization from the DFT-GGA calculations using the VASP and CASTEP databases. The results show that the Frenkel defect configuration resulting from the center interstitials has a lower energy when compared to two adjacent orthophosphate centers (the saddle point position). High formation energies were found for all the types of intrinsic Frenkel and vacancy defects. The formation energies conform to the following trend (given in the decreasing order of energy): Ce Frenkel (12.41 eV) > O Frenkel (11.02 eV) > Ce vacancy (9.09 eV) > O vacancy (6.69 eV). We observed almost no effect from the defect concentrations on the defect formation energies.

Bremsstrahlung-induced highly penetrating probes for nondestructive assay and defect analysis

CERN Document Server

Selim, F A; Harmon, J F; Kwofie, J; Spaulding, R; Erickson, G; Roney, T

2002-01-01

Nondestructive assay and defect analysis probes based on bremsstrahlung-induced processes have been developed to identify elements and probe defects in large volume samples. Bremsstrahlung beams from (electron accelerators) with end-point energies both above and below neutron emission threshold have been used. Below neutron emission threshold these beams (from 6 MeV small pulsed linacs), which exhibit high penetration, create positrons via pair production inside the material and produce X-ray fluorescence (XRF) radiation. Chemical assays of heavy elements in thick samples up to 10 g/cm sup 2 thick are provided by energy dispersive XRF measurements. The pair-produced positrons annihilate within the material, thereby emitting 511 keV gamma radiation. Doppler broadening spectroscopy of the 511 keV radiation can be performed to characterize the material and measure defects in samples of any desired thickness. This technique has successfully measured induced strain due to tensile stress in steel samples of 0.64 cm...

Initial Human Response to Nuclear Radiation

Science.gov (United States)

1982-04-01

symptomatic response to radiation. In the second phase, the models will be used to infer performance effects. DNA staff members Cyrus Knowles and David ...P. Setty ATTN: K. Schwartz ATTN: J. NcGahan Kamn Tempo System Planning Corp ATTN: R. Miller ATTN: J. JonesATTN: G. Perks Kamen Tempo AiT: S. Shrier

The feasibility of 10 keV X-ray as radiation source in total dose response radiation test

International Nuclear Information System (INIS)

Li Ruoyu; Li Bin; Luo Hongwei; Shi Qian

2005-01-01

The standard radiation source utilized in traditional total dose response radiation test is 60 Co, which is environment-threatening. X-rays, as a new radiation source, has the advantages such as safety, precise control of dose rate, strong intensity, possibility of wafer-level test or even on-line test, which greatly reduce cost for package, test and transportation. This paper discussed the feasibility of X-rays replacing 60 Co as the radiation source, based on the radiation mechanism and the effects of radiation on gate oxide. (authors)

Canine tumor and normal tissue response to heat and radiation

International Nuclear Information System (INIS)

Gillette, E.L.; McChesney, S.L.

1985-01-01

Oral squamous cell carcinomas of dogs were treated with either irradiation alone or combined with hyperthermia. Tumor control was assessed as no evidence of disease one year following treatment. Dogs were randomized to variable radiation doses which were given in ten fractions three times a week for three weeks. Heat was given three hours after the first and third radiation dose each week for seven treatments. The attempt was made to achieve a minimum tumor temperature of 42 0 C for thirty minutes with a maximum normal tissue temperature of 40 0 C. It was usually possible to selectively heat tumors. The TCD 50 for irradiation alone was about 400 rads greater than for heat plus irradiation. The dose response curve for heat plus radiation was much steeper than for radiation alone indicating less heterogeneity of tumor response. That also implies a much greater effectiveness of radiation combined with heat at higher tumor control probabilities. Early necrosis caused by heating healed with conservative management. No increase in late radiation necrosis was observed

Electrical fingerprint of pipeline defects

International Nuclear Information System (INIS)

Mica, Isabella; Polignano, Maria Luisa; Marco, Cinzia De

2004-01-01

Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes

T lymphocytes and normal tissue responses to radiation

International Nuclear Information System (INIS)

Schaue, Dörthe; McBride, William H.

2012-01-01

There is compelling evidence that lymphocytes are a recurring feature in radiation damaged normal tissues, but assessing their functional significance has proven difficult. Contradictory roles have been postulated in both tissue pathogenesis and protection, although these are not necessarily mutually exclusive as the immune system can display what may seem to be opposing faces at any one time. While the exact role of T lymphocytes in irradiated normal tissue responses may still be obscure, their accumulation after tissue damage suggests they may be critical targets for radiotherapeutic intervention and worthy of further study. This is accentuated by recent findings that pathologically damaged “self,” such as occurs after exposure to ionizing radiation, can generate danger signals with the ability to activate pathways similar to those that activate adoptive immunity to pathogens. In addition, the demonstration of T cell subsets with their recognition radars tuned to “self” moieties has revolutionized our ideas on how all immune responses are controlled and regulated. New concepts of autoimmunity have resulted based on the dissociation of immune functions between different subsets of immune cells. It is becoming axiomatic that the immune system has the power to regulate radiation-induced tissue damage, from failure of regeneration to fibrosis, to acute and chronic late effects, and even to carcinogenesis. Our understanding of the interplay between T lymphocytes and radiation-damaged tissue may still be rudimentary but this is a good time to re-examine their potential roles, their radiobiological and microenvironmental influences, and the possibilities for therapeutic manipulation. This review will discuss the yin and yang of T cell responses within the context of radiation exposures, how they might drive or protect against normal tissue side effects and what we may be able do about it.

Calculating the Responses of Self-Powered Radiation Detectors.

Science.gov (United States)

Thornton, D. A.

Available from UMI in association with The British Library. The aim of this research is to review and develop the theoretical understanding of the responses of Self -Powered Radiation Detectors (SPDs) in Pressurized Water Reactors (PWRs). Two very different models are considered. A simple analytic model of the responses of SPDs to neutrons and gamma radiation is presented. It is a development of the work of several previous authors and has been incorporated into a computer program (called GENSPD), the predictions of which have been compared with experimental and theoretical results reported in the literature. Generally, the comparisons show reasonable consistency; where there is poor agreement explanations have been sought and presented. Two major limitations of analytic models have been identified; neglect of current generation in insulators and over-simplified electron transport treatments. Both of these are developed in the current work. A second model based on the Explicit Representation of Radiation Sources and Transport (ERRST) is presented and evaluated for several SPDs in a PWR at beginning of life. The model incorporates simulation of the production and subsequent transport of neutrons, gamma rays and electrons, both internal and external to the detector. Neutron fluxes and fuel power ratings have been evaluated with core physics calculations. Neutron interaction rates in assembly and detector materials have been evaluated in lattice calculations employing deterministic transport and diffusion methods. The transport of the reactor gamma radiation has been calculated with Monte Carlo, adjusted diffusion and point-kernel methods. The electron flux associated with the reactor gamma field as well as the internal charge deposition effects of the transport of photons and electrons have been calculated with coupled Monte Carlo calculations of photon and electron transport. The predicted response of a SPD is evaluated as the sum of contributions from individual

Defects in medical X-ray equipment

International Nuclear Information System (INIS)

Eder, H.; Wahl, H.; Troeger, W.

1979-01-01

A careful estimate of the effects on the genetically significant radiation load shows that it is in the same order of magnitude as the increase in the skin dose area product. This is to say that of the genetically significant radiation dose of about 500 mJ/kg (50 mrem) per year and person due to medical X-ray diagnostics, about 75 mJ/kg (7.5 mrem) are due to serious defects in X-ray equipment. (orig.) [de

Defect formation in fluoropolymer films at their condensation from a gas phase

Science.gov (United States)

Luchnikov, P. A.

2018-01-01

The questions of radiation defects, factors of influence of electronic high-frequency discharge plasma components on the molecular structure and properties of the fluoropolymer vacuum films synthesized on a substrate from a gas phase are considered. It is established that at sedimentation of fluoropolymer coverings from a gas phase in high-frequency discharge plasma in films there are radiation defects in molecular and supramolecular structure because of the influence of active plasma components which significantly influence their main properties.

Correlation between nuclear response and defects in CZT

International Nuclear Information System (INIS)

Hermon, H.; Schieber, M.; James, R. B.; Lee, E.; Cross, E.; Goorsky, M.; Lam, T.; Schlesinger, T. E.; Greaves, M.

1999-01-01

Vertical high pressure Bridgman (VHPB) was considered until now to be the most successful crystal growth method to produce Cd 1-x Zn x Te (CZT), (0.04 1-x Zn x Te crystals produced by IMARAD Co. have also been successfully fabricated into nuclear spectroscopic radiation detectors. In view of the database of many years' study of the electrical properties of VHPB CZT grown and obtained from various sources, the authors also studied the HB CZT crystals in order to compare the defects present in both different kinds of crystals grown by different methods. The VHB-grown samples were examined using thermoelectric emission spectroscopy (TEES), X- and gamma ray spectroscopy and laser induced transient charge technique (TCT). The surface and the bulk crystalline homogeneity were mapped using triaxial double crystal x-ray diffraction (TADXRD) and infrared transmission spectroscopy (IR). They have found a correlation between crystallinity, IR transmission microstructure and trapping times. Spectrometer grade VHPB CZT crystals exhibit trapping times of 20 (micro)s for electrons and 7 (micro)s for holes, however, regions, which were opaque to IR transmission, had trapping times shorter by one order of magnitude. The trapping times of HB CZT for electrons, were 10--15 (micro)s. A similar trend has been observed on VHPB CZT crystals with poor crystallinity. The HB CZT crystals that they measured in this study had a crystallinity that was inferior to that of the best spectroscopic grade VHPB crystals

Biological Bases for Radiation Adaptive Responses in the Lung

Energy Technology Data Exchange (ETDEWEB)

Scott, Bobby R. [Lovelace Biomedical and Environmental Research Inst., Albuquerque, NM (United States); Lin, Yong [Lovelace Biomedical and Environmental Research Inst., Albuquerque, NM (United States); Wilder, Julie [Lovelace Biomedical and Environmental Research Inst., Albuquerque, NM (United States); Belinsky, Steven [Lovelace Biomedical and Environmental Research Inst., Albuquerque, NM (United States)

2015-03-01

Our main research objective was to determine the biological bases for low-dose, radiation-induced adaptive responses in the lung, and use the knowledge gained to produce an improved risk model for radiation-induced lung cancer that accounts for activated natural protection, genetic influences, and the role of epigenetic regulation (epiregulation). Currently, low-dose radiation risk assessment is based on the linear-no-threshold hypothesis, which now is known to be unsupported by a large volume of data.

Understanding the role of p53 in adaptive response to radiation-induced germline mutations

International Nuclear Information System (INIS)

Langlois, N.L.; Quinn, J.S.; Somers, C.M.; Boreham, D.R.; Mitchel, R.E.J.

2003-01-01

Full text: Radiation-induced adaptive response is now a widely studied area of radiation biology. Studies have demonstrated reduced levels of radiation-induced biological damage when an 'adaptive dose' is given before a higher 'challenge dose' compared to when the challenge dose is given alone. It has been shown in some systems to be a result of inducible cellular repair systems. The adaptive response has been clearly demonstrated in many model systems, however its impact on heritable effects in the mammalian germline has never been studied. Expanded Simple Tandem Repeat (ESTR) loci have been used as markers demonstrating that induced heritable mutations in mice follow a dose-response relationship. Recent data in our laboratory show preliminary evidence of radiation-induced adaptive response suppressing germline mutations at ESTR loci in wild type mice. The frequency of heritable mutations was significantly reduced when a priming dose of 0.1 Gy was given 24 hours prior to a 1 Gy acute challenging dose. We are now conducting a follow-up study to attempt to understand the mechanism of this adaptive response. P53 is known to play a significant role in governing apoptosis, DNA repair and cancer induction. In order to determine what function p53 has in the adaptive response for heritable mutations, we have mated radiation treated Trp53+/- male mice (C57Bl) to untreated, normal females (C57Bl). Using DNA fingerprinting, we are investigating the rate of inherited radiation-induced mutations on pre- and post-meiotic radiation-treated gametocytes by examining mutation frequencies in offspring DNA. If p53 is integral in the mechanism of adaptive response, we should not see an adaptive response in radiation-induced heritable mutations in these mice. This research is significant in that it will provide insight to understanding the mechanism behind radiation-induced adaptive response in the mammalian germline

Radiation effects in bulk and nanostructured silicon

Energy Technology Data Exchange (ETDEWEB)

Holmstrom, E.

2012-07-01

Understanding radiation effects in silicon (Si) is of great technological importance. The material, being the basis of modern semiconductor electronics and photonics, is subjected to radiation already at the processing stage, and in many applications throughout the lifetime of the manufactured component. Despite decades of research, many fundamental questions on the subject are still not satisfactorily answered, and new ones arise constantly as device fabrication shifts towards the nanoscale. In this study, methods of computational physics are harnessed to tackle basic questions on the radiation response of bulk and nanostructured Si systems, as well as to explain atomic-scale phenomena underlying existing experimental results. Empirical potentials and quantum mechanical models are coupled with molecular dynamics simulations to model the response of Si to irradiation and to characterize the created crystal damage. The threshold displacement energy, i.e., the smallest recoil energy required to create a lattice defect, is determined in Si bulk and nanowires, in the latter system also as a function of mechanical strain. It is found that commonly used values for this quantity are drastically underestimated. Strain on the nanowire causes the threshold energy to drop, with an effect on defect production that is significantly higher than in an another nanostructure with similar dimensions, the carbon nanotube. Simulating ion irradiation of Si nanowires reveals that the large surface area to volume ratio of the nanostructure causes up to a three-fold enhancement in defect production as compared to bulk Si. Amorphous defect clusters created by energetic neutron bombardment are predicted, on the basis of their electronic structure and abundance, to cause a deleterious phenomenon called type inversion in Si strip detectors in high-energy physics experiments. The thinning of Si lamellae using a focused ion beam is studied in conjunction with experiment to unravel the cause for

Insight into the effect of screw dislocations and oxygen vacancy defects on the optical nonlinear refraction response in chemically grown ZnO/Al2O3 films

Science.gov (United States)

Agrawal, Arpana; Saroj, Rajendra K.; Dar, Tanveer A.; Baraskar, Priyanka; Sen, Pratima; Dhar, Subhabrata

2017-11-01

We report the effect of screw dislocations and oxygen vacancy defects on the optical nonlinear refraction response of ZnO films grown on a sapphire substrate at various oxygen flow rates using the chemical vapor deposition technique. The nonlinear refraction response was investigated in the off-resonant regime using a CW He-Ne laser source to examine the role of the intermediate bandgap states. It has been observed that the structural defects strongly influence the optical nonlinearity in the off-resonant regime. Nonlinearity has been found to improve as the oxygen flow rate is lowered from 2 sccm to 0.3 sccm. From photoluminescence studies, we observe that the enhanced defect density of the electronic defect levels due to the increased concentration of structural defects (with the decrease in the oxygen flow rate) is responsible for this improved optical nonlinearity along with the thermal effect. This suggests that defect engineering is an effective way to tailor the nonlinearity of ZnO films and their utility for optoelectronic device applications.

WORTMANNIN affect cellular response by radiation

International Nuclear Information System (INIS)

Li Yu; Li Bailong

2010-01-01

Objective: To observe radiation Response of cells by WORTMANNIN (WT), which is inhibitor for Phosphatidylinositol-3 Kinase (PI-3K). Methods: LP3 cells are prepared with different concentration of WT for 1 hour and receive different dose γ irradiation. To continue the cell for clone culture, and get the production of dose-survival curve. 1800 pulsed-field gel electrophoresis is used to detect DNA double-strand breaks after the 20 Gy γ irradiation. Continue to use the mobility shift assays (Electrophoresis Mobility Shift Assay, EMSA) to observe NF-kB transcription factor of the corresponding changes. Result: WT can be found to increase the radiation sensitivity of SP3 cells, the best sensitizer concentration in 20 μmol /L or more, obvious sensitizing effect within 6 h time; the electrophoresis experiments showed that after irradiation with time, by 50 μmol /L WT group DNA the gel is higher than that of the simple exposure group; transcription factor NF-kB binding activity in the 6 hours after exposure experiences a low-rise and then the process of rising with its the peak of the change reaching after about 3 hours after irradiation. Conclusion: It suggests the existence of PI-3K-mediated radiation sensitizer pathways. Ionizing radiation may activate NF-kB, which caused some DNA damage repair and other defense mechanisms and cell-related gene activity in order to reduce radiation damage. WT may block this process through the early stages of radiation-sensitizing effect. (authors)

Thermoluminescence response of a mixed ternary alkali halide crystals exposed to gamma rays

Energy Technology Data Exchange (ETDEWEB)

Rodriguez M, R.; Perez S, R. [Universidad de Sonora, Departamento de Investigacion en Fisica, Apdo. Postal 5-088, 83190 Hermosillo, Sonora (Mexico); Vazquez P, G.; Riveros, H. [UNAM, Instituto de Fisica, Apdo. Postal 20-364, 01000 Mexico D. F. (Mexico); Gonzalez M, P., E-mail: mijangos@cifus.uson.mx [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2014-08-15

Ionic crystals, mainly alkali halide crystals have been the subject of intense research for a better understanding of the luminescence properties of defects induced by ionizing radiation. The defects in crystals can be produced in appreciable concentration due to elastic stresses, radiation, and addition of impurities. These defects exhibit remarkable thermoluminescence properties. This work is concerned with the Tl properties of a ternary alkali halide crystal after being irradiated with gamma and beta rays. It has been found that the Tl glow peak of the crystal follows a rule of average associated to the Tl Temperatures of the components of the mixture, similarly to the response of europium doped binary mixed crystals KCl{sub x}KBr{sub 1-x} and KBr{sub x}RbBr{sub 1-x}. (Author)

The Effect of Radiation "Memory" in Alkali-Halide Crystals

Science.gov (United States)

Korovkin, M. V.; Sal'nikov, V. N.

2017-01-01

The exposure of the alkali-halide crystals to ionizing radiation leads to the destruction of their structure, the emergence of radiation defects, and the formation of the electron and hole color centers. Destruction of the color centers upon heating is accompanied by the crystal bleaching, luminescence, and radio-frequency electromagnetic emission (REME). After complete thermal bleaching of the crystal, radiation defects are not completely annealed, as the electrons and holes released from the color centers by heating leave charged and locally uncompensated defects. Clusters of these "pre centers" lead to electric microheterogeneity of the crystal, the formation of a quasi-electret state, and the emergence of micro-discharges accompanied by radio emission. The generation of REME associated with residual defectiveness, is a manifestation of the effect of radiation "memory" in dielectrics.

Pullout Performances of Grouted Rockbolt Systems with Bond Defects

Science.gov (United States)

Xu, Chang; Li, Zihan; Wang, Shanyong; Wang, Shuren; Fu, Lei; Tang, Chunan

2018-03-01

This paper presents a numerical study on the pullout behaviour of fully grouted rockbolts with bond defects. The cohesive zone model (CZM) is adopted to model the bond-slip behaviour between the rockbolt and grout material. Tensile tests were also conducted to validate the numerical model. The results indicate that the defect length can obviously influence the load and stress distributions along the rockbolt as well as the load-displacement response of the grouted system. Moreover, a plateau in the stress distribution forms due to the bond defect. The linear limit and peak load of the load-displacement response decrease as the defect length increases. A bond defect located closer to the loaded end leads to a longer nonlinear stage in the load-displacement response. However, the peak loads measured from the specimens made with various defect locations are almost approximately the same. The peak load for a specimen with the defects equally spaced along the bolt is higher than that for a specimen with defects concentrated in a certain zone, even with the same total defect length. Therefore, the dispersed pattern of bond defects would be much safer than the concentrated pattern. For the specimen with dispersed defects, the peak load increases with an increase in the defect spacing, even if the total defect length is the same. The peak load for a grouted rockbolt system with defects increases with an increases in the bolt diameter. This work leads to a better understanding of the load transfer mechanism for grouted rockbolt systems with bond defects, and paves the way towards developing a general evaluation method for damaged rockbolt grouted systems.

Radiation responses of stem cells: targeted and non-targeted effects

International Nuclear Information System (INIS)

Kavanagh, J.N.; Waring, E.J.; Prise, K.M.

2015-01-01

Stem cells are fundamental to the development of any tissue or organism via their ability to self-renew, which is aided by their unlimited proliferative capacity and their ability to produce fully differentiated offspring, often from multiple lineages. Stems cells are long lived and have the potential to accumulate mutations, including in response to radiation exposure. It is thought that stem cells have the potential to be induced into a cancer stem cell phenotype and that these may play an important role in resistance to radiotherapy. For radiation-induced carcinogenesis, the role of targeted and non-targeted effects is unclear with tissue or origin being important. Studies of genomic instability and bystander responses have shown consistent effects in haematopoietic models. Several models of radiation have predicted that stem cells play an important role in tumour initiation and that bystander responses could play a role in proliferation and self-renewal. (authors)

Cathodoluminescence investigation of Ge-point defects in silica-based optical fibers

Energy Technology Data Exchange (ETDEWEB)

Reghioua, I., E-mail: imene.reghioua@univ-st-etienne.fr [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Girard, S.; Alessi, A.; Di Francesca, D. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France); Martin-Samos, L.; Fanetti, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Richard, N.; Raine, M. [CEA, DAM, DIF, F91297, Arpajon (France); Valant, M. [Materials Research Laboratory, University of Nova Gorica, Vipavska 11c 5270-Ajdovscina (Slovenia); Boukenter, A.; Ouerdane, Y. [Univ-Lyon, Laboratoire H. Curien, UMR CNRS 5516, 18 rue du Pr. Benoît Lauras, 42000 Saint-Etienne (France)

2016-11-15

Cathodoluminescence (CL) measurements have been performed on Ge doped and Ge/F co-doped optical fibers, in the aim of studying the spatial distributions of the emitting precursor defects present in the as-drawn optical fiber as well as those of the radiation induced centers generated by the 10 keV electron exposure. Using the CL instrument, we recorded different emission bands located in the visible spectral domain (300–750 nm) as well as CL imaging of associated defects, with a spatial resolution of about 1 µm, along the fiber transverse cross sections. In the pristine fiber, Germanium Lone Pair Centers (GLPCs) emitting at 400 nm are the main precursor sites observed in both fibers. Whereas during electron exposure, these centers are converted into other Ge-related defects. In this paper, we studied in situ their bleaching kinetic using CL monochromatic imaging. As expected, our results show that the GLPC signal decreases with the electron fluence, confirming its precursor role. Thanks to the CL abilities, we also demonstrate that the GLPC conversion into radiation induced defects (and then its bleaching kinetic) depends on the germanium concentration, opening the way to a better control of the radiation sensitivity of germanosilicate glass.

Clinical implications of heterogeneity of tumor response to radiation therapy

International Nuclear Information System (INIS)

Suit, H.; Skates, S.; Taghian, A.; Okunieff, P.; Efird, J.T.

1992-01-01

Heterogeneity of response of tumor tissue to radiation clearly exists. Major parameters include histopathologic type, size (number of tumor rescue units (TRUs)), hemoglobin concentration, cell proliferation kinetics and immune rejection reaction by host. Further, normal and presumably tumor tissue response is altered in certain genetic diseases, e.g. ataxia telangiectasia. Any assessment of response of tumor tissue to a new treatment method or the testing of a new clinical response predictor is optimally based upon a narrow strata, viz., uniform with respect to known parameters of response, e.g. size, histological type. Even among tumors of such a clinical defined narrow strata, there will be residual heterogeneity with respect to inherent cellular radiation sensitivity, distributions of pO 2 , (SH), cell proliferation, etc. (author). 39 refs., 7 figs., 3 tabs

Helium bubbles aggravated defects production in self-irradiated copper

Science.gov (United States)

Wu, FengChao; Zhu, YinBo; Wu, Qiang; Li, XinZhu; Wang, Pei; Wu, HengAn

2017-12-01

Under the environment of high radiation, materials used in fission and fusion reactors will internally accumulate numerous lattice defects and bubbles. With extensive studies focused on bubble resolution under irradiation, the mutually effects between helium bubbles and displacement cascades in irradiated materials remain unaddressed. Therefore, the defects production and microstructure evolution under self-irradiation events in vicinity of helium bubbles are investigated by preforming large scale molecular dynamics simulations in single-crystal copper. When subjected to displacement cascades, distinguished bubble resolution categories dependent on bubble size are observed. With the existence of bubbles, radiation damage is aggravated with the increasing bubble size, represented as the promotion of point defects and dislocations. The atomic mechanisms of heterogeneous dislocation structures are attributed to different helium-vacancy cluster modes, transforming from the resolved gas trapped with vacancies to the biased absorption of vacancies by the over-pressured bubble. In both cases, helium impedes the recombination of point defects, leading to the accelerated formation of interstitial loops. The results and insight obtained here might contribute to understand the underlying mechanism of transmutant solute on the long-term evolution of irradiated materials.

Study of defect characteristics essential for NDT testing methods ET, UT and RT

International Nuclear Information System (INIS)

Wirdelius, H.; Oesterberg, Elena

2000-10-01

This paper presents results from a literature review of defect characteristics essential for nondestructive testing (NDT). Most of the major NDT methods are included in the study - ultrasonic testing (UT), radiography (RT) and eddy current testing (ET). The study was performed by means of searching in scientific databases, technical journals, conference proceedings etc. Mainly the following databases were used: CHANS (Chalmers database), INSPEC, NTIS, Ei Compendex, World Surface Coating Abs, METADEX, JICST-Eplus, Aerospace database, Pascal, Eng Materials, SciSearch and Weldasearch. It is concluded that for eddy current testing, the defect geometry, the defect size and the defect orientation influence the outcome signal. A number of investigations address the relationships between the defect parameters like defect depth, length and width and the outcome signal parameters like amplitude, phase and signal shape. Also the phenomena of the electrical contacts between the defect surfaces (for a crack) was studied. Defect parameters that are essential to the quality of ultrasonic testing are defect position in the object (includes the depth), orientation, size, crack surface roughness, closure and tip radius. This investigation has been focused on those parameters that are not that easy to reconstruct and only briefly discussed the influence on the signal response due to defect position, orientation and size. When it comes to radiographic techniques, the most important defect related parameters that influence the quality are the difference in radio opacity of the specimen and defect and the angle between the volumetric extension of the defect and the direction of projection. The defect gape and the morphology of the crack are also very essential parameters. A very simple model of the detectability as a function of depth, width and misorientation (angle to the radiation beam) has been validated and to some extent also verified in a number of papers. Even for defects with

Induction of adaptive response in human blood lymphocytes exposed to radiofrequency radiation.

Science.gov (United States)

Sannino, Anna; Sarti, Maurizio; Reddy, Siddharth B; Prihoda, Thomas J; Vijayalaxmi; Scarfì, Maria Rosaria

2009-06-01

The incidence of micronuclei was evaluated to assess the induction of an adaptive response to non-ionizing radiofrequency (RF) radiation in peripheral blood lymphocytes collected from five different human volunteers. After stimulation with phytohemagglutinin for 24 h, the cells were exposed to an adaptive dose of 900 MHz RF radiation used for mobile communications (at a peak specific absorption rate of 10 W/kg) for 20 h and then challenged with a single genotoxic dose of mitomycin C (100 ng/ml) at 48 h. Lymphocytes were collected at 72 h to examine the frequency of micronuclei in cytokinesis-blocked binucleated cells. Cells collected from four donors exhibited the induction of adaptive response (i.e., responders). Lymphocytes that were pre-exposed to 900 MHz RF radiation had a significantly decreased incidence of micronuclei induced by the challenge dose of mitomycin C compared to those that were not pre-exposed to 900 MHz RF radiation. These preliminary results suggested that the adaptive response can be induced in cells exposed to non-ionizing radiation. A similar phenomenon has been reported in cells as well as in animals exposed to ionizing radiation in several earlier studies. However, induction of adaptive response was not observed in the remaining donor (i.e., non-responder). The incidence of micronuclei induced by the challenge dose of mitomycin C was not significantly different between the cells that were pre-exposed and unexposed to 900 MHz RF radiation. Thus the overall data indicated the existence of heterogeneity in the induction of an adaptive response between individuals exposed to RF radiation and showed that the less time-consuming micronucleus assay can be used to determine whether an individual is a responder or non-responder.

First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application

International Nuclear Information System (INIS)

Lordi, V; Aberg, D; Erhart, P; Wu, K J

2007-01-01

The development of high resolution, room temperature semiconductor radiation detectors requires the introduction of materials with increased carrier mobility-lifetime (μτ) product, while having a band gap in the 1.4-2.2 eV range. AlSb is a promising material for this application. However, systematic improvements in the material quality are necessary to achieve an adequate μτ product. We are using a combination of simulation and experiment to develop a fundamental understanding of the factors which affect detector material quality. First principles calculations are used to study the microscopic mechanisms of mobility degradation from point defects and to calculate the intrinsic limit of mobility from phonon scattering. We use density functional theory (DFT) to calculate the formation energies of native and impurity point defects, to determine their equilibrium concentrations as a function of temperature and charge state. Perturbation theory via the Born approximation is coupled with Boltzmann transport theory to calculate the contribution toward mobility degradation of each type of point defect, using DFT-computed carrier scattering rates. A comparison is made to measured carrier concentrations and mobilities from AlSb crystals grown in our lab. We find our predictions in good quantitative agreement with experiment, allowing optimized annealing conditions to be deduced. A major result is the determination of oxygen impurity as a severe mobility killer, despite the ability of oxygen to compensation dope AlSb and reduce the net carrier concentration. In this case, increased resistivity is not a good indicator of improved material performance, due to the concomitant sharp reduction in μτ

Atomistic simulations of the radiation resistance of oxides

International Nuclear Information System (INIS)

Chartier, A.; Van Brutzel, L.; Crocombette, J.-P.

2012-01-01

Fluorite compounds such as urania and ceria, or related compounds such as pyrochlores and also spinels show different behaviors under irradiations, which ranges from perfect radiation resistance to crystalline phase change or even complete amorphization depending on their structure and/or their composition. Displacement cascades – dedicated to the understanding of the ballistic regime and performed by empirical potentials molecular dynamics simulations – have revealed that the remaining damages of the above mentioned oxides are reduced to point defects unlike what is observed in zircon and zirconolite, which directly amorphize during the cascade. The variable behavior of these point defects is the key of the various responses of these materials to irradiations. This behavior can be investigated by two specific molecular dynamics methodologies that will be reviewed here: (i) the method of point defects accumulation as a function of temperature that gives access to the dose effects and to the critical doses for amorphization; (ii) the study Frenkel pairs life-time – i.e. their time of recombination as function of temperature – that may be used as a tool to understand the results obtained in displacements cascades or to identify the microscopic mechanisms responsible for the amorphization/re-crystallization during the point defects accumulations.

Influence of some exo nucleases in response to the induced genetic damage in Escherichia coli by alpha radiation

International Nuclear Information System (INIS)

Aguilar M, M.

2005-01-01

Within the strategies with those that E. coli counts to overcome to the genetic damage there is the SOS response, a group of genes that participate in repair and/or tolerance that it confers to the bacteria major opportunities of surviving. These genes are repressed and its only are expressed when it happens genetic damage. So that this system is activated it is necessary that DNA of a band exists and in this sense the double ruptures (RDB) its are not able to induce this response unless there is a previous processing. In stumps with defects in certain genes that have to do with repair of RDB (as recO, recJ and xonA) the activity of SOS is smaller than in a wild stump what suggests that these participate in the previous processes to the activation of the response. The ionizing radiation produce among other many lesions, RDB in greater or smaller proportion, depending on the ionization capacity. A parameter to evaluate this capacity is the lineal energy transfer (LET), defined as the average energy given by unit of distance travelled. In general the LET of the corpuscular radiations is a lot but high that of the electromagnetic one, for what produces bigger quantity of ionizations inside a restricted zone and it increases by this way the probability that RDB has been generated. This work has for object to infer the participation of xonA and recJ in this response and to evaluate the damage produced by ionizing radiation of different LET (alpha particles of different energies) in a stump with all the functional repair mechanisms. Its were considered two parameters: the survival and the activity of SOS evaluated by means of the chromo test. The results indicate that the activity of these exo nucleases is necessary for the repair of RDB as well as for the processing of lesions foresaw to the activation of SOS. As for the treatment with alphas of different energies is observed that so much the survival like the activity of SOS vary as the LET of the radiation changes

Simulations of hybrid system varying solar radiation and microturbine response time

Directory of Open Access Journals (Sweden)

Yolanda Fernández Ribaya

2015-07-01

Full Text Available Hybrid power systems, such as combinations of renewable power sources with intermittent power production and non-renewable power sources, theoretically increase the reliability and thus integration of renewable sources in the electrical system. However, a recent increase in the number of hybrid installations has sparked interest in the effects of their connection to the grid, especially in remote areas. This paper analyses a photovoltaic-gas microturbine hybrid system dimensioned to be installed in La Paz (Mexico.The research presented in this paper studies and quantifies the effects on the total electric power produced, varying both the solar radiation and the gas microturbine response time. The gas microturbine and the photovoltaic panels are modelled using Matlab/Simulink software, obtaining a platform where different tests to simulate real conditions have been executed. They consist of diverse ramps of irradiance that replicate solar radiation variations, and different microturbine response times reproduced by the time constants of a first order transfer function that models the microturbine dynamic response. The results obtained show that when radiation varies quickly it does not produce significant differences in the power guarantee or the microturbine gas consumption, to any microturbine response time. However, these two parameters are highly variable with smooth radiance variations. The maximum total power variation decreases greatly as the radiation variation gets lower. In addition, by decreasing the microturbine response time, it is possible to appreciably increase the power guarantee although the maximum power variation and gas consumption increase. Only in cases of low radiation variation is there no appreciable difference in the maximum power variation obtained by the different turbine response times.

Role of Interleukin-6 in the Radiation Response of Liver Tumors

International Nuclear Information System (INIS)

Chen, Miao-Fen; Hsieh, Ching-Chuan; Chen, Wen-Cheng; Lai, Chia-Hsuan

2012-01-01

Purpose: To investigate the role of interleukin (IL)-6 in biological sequelae and tumor regrowth after irradiation for hepatic malignancy, which are critical for the clinical radiation response of liver tumors. Methods and Materials: The Hepa 1-6 murine hepatocellular cancer cell line was used to examine the radiation response by clonogenic assays and tumor growth delay in vivo. After irradiation in a single dose of 6 Gy in vitro or 15 Gy in vivo, biological changes including cell death and tumor regrowth were examined by experimental manipulation of IL-6 signaling. The effects of blocking IL-6 were assessed by cells preincubated in the presence of IL-6–neutralizing antibody for 24 hours or stably transfected with IL-6–silencing vectors. The correlations among tumor responses, IL-6 levels, and myeloid-derived suppressor cells (MDSC) recruitment were examined using animal experiments. Results: Interleukin-6 expression was positively linked to irradiation and radiation resistance, as demonstrated by in vitro and in vivo experiments. Interleukin-6–silencing vectors induced more tumor inhibition and DNA damage after irradiation. When subjects were irradiated with a sublethal dose, the regrowth of irradiated tumors significantly correlated with IL-6 levels and MDSC recruitment in vivo. Furthermore, blocking of IL-6 could overcome irradiation-induced MDSC recruitment and tumor regrowth after treatment. Conclusion: These data demonstrate that IL-6 is important in determining the radiation response of liver tumor cells. Irradiation-induced IL-6 and the subsequent recruitment of MDSC could be responsible for tumor regrowth. Therefore, treatment with concurrent IL-6 inhibition could be a potential therapeutic strategy for increasing the radiation response of tumors.

Simulations of hybrid system varying solar radiation and microturbine response time

Energy Technology Data Exchange (ETDEWEB)

Fernández Ribaya, Yolanda, E-mail: fernandezryolanda@uniovi.es; Álvarez, Eduardo; Paredes Sánchez, José Pablo; Xiberta Bernat, Jorge [Department of Energy E.I.M.E.M., University of Oviedo. 13 Independencia Street 2" n" d floor, 36004, Oviedo (Spain)

2015-07-15

Hybrid power systems, such as combinations of renewable power sources with intermittent power production and non-renewable power sources, theoretically increase the reliability and thus integration of renewable sources in the electrical system. However, a recent increase in the number of hybrid installations has sparked interest in the effects of their connection to the grid, especially in remote areas. This paper analyses a photovoltaic-gas microturbine hybrid system dimensioned to be installed in La Paz (Mexico).The research presented in this paper studies and quantifies the effects on the total electric power produced, varying both the solar radiation and the gas microturbine response time. The gas microturbine and the photovoltaic panels are modelled using Matlab/Simulink software, obtaining a platform where different tests to simulate real conditions have been executed. They consist of diverse ramps of irradiance that replicate solar radiation variations, and different microturbine response times reproduced by the time constants of a first order transfer function that models the microturbine dynamic response. The results obtained show that when radiation varies quickly it does not produce significant differences in the power guarantee or the microturbine gas consumption, to any microturbine response time. However, these two parameters are highly variable with smooth radiance variations. The maximum total power variation decreases greatly as the radiation variation gets lower. In addition, by decreasing the microturbine response time, it is possible to appreciably increase the power guarantee although the maximum power variation and gas consumption increase. Only in cases of low radiation variation is there no appreciable difference in the maximum power variation obtained by the different turbine response times.

Radionuclide analysis of right and left ventricular response to exercise in patients with atrial and ventricular septal defects

International Nuclear Information System (INIS)

Peter, C.A.; Bowyer, K.; Jones, R.H.

1983-01-01

In patients with ventricular or atrial septal defect, the ventricle which is chronically volume overloaded might not appropriately respond to increased demand for an augmentation in output and thereby might limit total cardiac function. In this study we simultaneously measured right and left ventricular response to exercise in 10 normal individuals, 10 patients with ventricular septal defect (VSD), and 10 patients with atrial septal defect (ASD). The normal subjects increased both right and left ventricular ejection fraction, end-diastolic volume, and stroke volume to achieve a higher cardiac output during exercise. Patients with VSD failed to increase right ventricular ejection fraction, but increased right ventricular end-diastolic volume and stroke volume. Left ventricular end-diastolic volume did not increase in these patients but ejection fraction, stroke volume, and forward left ventricular output achieved during exercise were comparable to the response observed in healthy subjects. In the patients with ASD, no rest-to-exercise change occurred in either right ventricular ejection fraction, end-diastolic volume, or stroke volume. In addition, left ventricular end-diastolic volume failed to increase, and despite an increase in ejection fraction, left ventricular stroke volume remained unchanged from rest to exercise. Therefore, cardiac output was augmented only by the heart rate increase in these patients. Right ventricular function appeared to be the major determinant of total cardiac output during exercise in patients with cardiac septal defects and left-to-right shunt

Defects introduced by Ar plasma exposure in GaAs probed by monoenergetic positron beam

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Wada, Kazumi; Nakanishi, Hideo

1994-10-01

Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the exposure was found to extend far beyond the stopping range of Ar ions, and the dominant defects were identified as interstitial-type defects. After 100degC annealing, such defects were annealed. Instead, vacancy-type defects were found to be the dominant defects in the subsurface region. (author).

Survival and SOS response induction in ultraviolet B irradiated Escherichia coli cells with defective repair mechanisms.

Science.gov (United States)

Prada Medina, Cesar Augusto; Aristizabal Tessmer, Elke Tatjana; Quintero Ruiz, Nathalia; Serment-Guerrero, Jorge; Fuentes, Jorge Luis

2016-06-01

Purpose In this paper, the contribution of different genes involved in DNA repair for both survival and SOS induction in Escherichia coli mutants exposed to ultraviolet B radiation (UVB, [wavelength range 280-315 nm]) was evaluated. Materials and methods E. coli strains defective in uvrA, oxyR, recO, recN, recJ, exoX, recB, recD or xonA genes were used to determine cell survival. All strains also had the genetic sulA::lacZ fusion, which allowed for the quantification of SOS induction through the SOS Chromotest. Results Five gene products were particularly important for survival, as follows: UvrA > RecB > RecO > RecJ > XonA. Strains defective in uvrA and recJ genes showed elevated SOS induction compared with the wild type, which remained stable for up to 240 min after UVB-irradiation. In addition, E. coli strains carrying the recO or recN mutation showed no SOS induction. Conclusions The nucleotide excision and DNA recombination pathways were equally used to repair UVB-induced DNA damage in E. coli cells. The sulA gene was not turned off in strains defective in UvrA and RecJ. RecO protein was essential for processing DNA damage prior to SOS induction. In this study, the roles of DNA repair proteins and their contributions to the mechanisms that induce SOS genes in E. coli are proposed.

7th International Workshop on Microbeam Probes of Cellular Radiation Response

Energy Technology Data Exchange (ETDEWEB)

Brenner, David J.

2009-07-21

The extended abstracts that follow present a summary of the Proceedings of the 7th International Workshop: Microbeam Probes of Cellular Radiation Response, held at Columbia University’s Kellogg Center in New York City on March 15–17, 2006. These International Workshops on Microbeam Probes of Cellular Radiation Response have been held regularly since 1993 (1–5). Since the first workshop, there has been a rapid growth (see Fig. 1) in the number of centers developing microbeams for radiobiological research, and worldwide there are currently about 30 microbeams in operation or under development. Single-cell/single-particle microbeam systems can deliver beams of different ionizing radiations with a spatial resolution of a few micrometers down to a few tenths of a micrometer. Microbeams can be used to addressquestions relating to the effects of low doses of radiation (a single radiation track traversing a cell or group of cells), to probe subcellular targets (e.g. nucleus or cytoplasm), and to address questions regarding the propagation of information about DNA damage (for example, the radiation-induced bystander effect). Much of the recent research using microbeams has been to study low-dose effects and ‘‘non-targeted’’ responses such as bystander effects, genomic instability and adaptive responses. This Workshop provided a forum to assess the current state of microbeam technology and current biological applications and to discuss future directions for development, both technological and biological. Over 100 participants reviewed the current state of microbeam research worldwide and reported on new technological developments in the fields of both physics and biology.

Response-driven imaging biomarkers for predicting radiation necrosis of the brain

International Nuclear Information System (INIS)

Nazem-Zadeh, Mohammad-Reza; Chapman, Christopher H; Lawrence, Theodore S; Ten Haken, Randall K; Tsien, Christina I; Cao, Yue; Chenevert, Thomas

2014-01-01

Radiation necrosis is an uncommon but severe adverse effect of brain radiation therapy (RT). Current predictive models based on radiation dose have limited accuracy. We aimed to identify early individual response biomarkers based upon diffusion tensor (DT) imaging and incorporated them into a response model for prediction of radiation necrosis. Twenty-nine patients with glioblastoma received six weeks of intensity modulated RT and concurrent temozolomide. Patients underwent DT-MRI scans before treatment, at three weeks during RT, and one, three, and six months after RT. Cases with radiation necrosis were classified based on generalized equivalent uniform dose (gEUD) of whole brain and DT index early changes in the corpus callosum and its substructures. Significant covariates were used to develop normal tissue complication probability models using binary logistic regression. Seven patients developed radiation necrosis. Percentage changes of radial diffusivity (RD) in the splenium at three weeks during RT and at six months after RT differed significantly between the patients with and without necrosis (p = 0.05 and p = 0.01). Percentage change of RD at three weeks during RT in the 30 Gy dose–volume of the splenium and brain gEUD combined yielded the best-fit logistic regression model. Our findings indicate that early individual response during the course of RT, assessed by radial diffusivity, has the potential to aid the prediction of delayed radiation necrosis, which could provide guidance in dose-escalation trials. (paper)

DNA Repair Defects and Chromosomal Aberrations

Science.gov (United States)

Hada, Megumi; George, K. A.; Huff, J. L.; Pluth, J. M.; Cucinotta, F. A.

2009-01-01

Yields of chromosome aberrations were assessed in cells deficient in DNA doublestrand break (DSB) repair, after exposure to acute or to low-dose-rate (0.018 Gy/hr) gamma rays or acute high LET iron nuclei. We studied several cell lines including fibroblasts deficient in ATM (ataxia telangiectasia mutated; product of the gene that is mutated in ataxia telangiectasia patients) or NBS (nibrin; product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase (DNA-PK) activity. Chromosomes were analyzed using the fluorescence in situ hybridization (FISH) chromosome painting method in cells at the first division post irradiation, and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma irradiation induced greater yields of both simple and complex exchanges in the DSB repair-defective cells than in the normal cells. The quadratic dose-response terms for both simple and complex chromosome exchanges were significantly higher for the ATM- and NBS-deficient lines than for normal fibroblasts. However, in the NBS cells the linear dose-response term was significantly higher only for simple exchanges. The large increases in the quadratic dose-response terms in these repair-defective cell lines points the importance of the functions of ATM and NBS in chromatin modifications to facilitate correct DSB repair and minimize the formation of aberrations. The differences found between ATM- and NBS-deficient cells at low doses suggest that important questions should with regard to applying observations of radiation sensitivity at high dose to low-dose exposures. For aberrations induced by iron nuclei, regression models preferred purely linear dose responses for simple exchanges and quadratic dose responses for complex exchanges. Relative biological effectiveness (RBE) factors of all of

Individual radiation response of parotid glands investigated by dynamic 11C-methionine PET

International Nuclear Information System (INIS)

Buus, Simon; Grau, Cai; Munk, Ole Lajord; Rodell, Anders; Jensen, Kenneth; Mouridsen, Kim; Keiding, Susanne

2006-01-01

Background and Purpose: Previously, we showed that the net metabolic clearance of 11 C-methionine of the parotid gland, K, calculated from dynamic 11 C-methionine PET, can be used as a measure of parotid gland function. The aim of this study was to investigate by dynamic 11 C-methionine PET the individual radiation dose response relationship of parotid glands in head and neck cancer patients. Patients and methods: Twelve head and neck cancer patients were examined by dynamic 11 C-methionine PET after radiotherapy. Parametric images of K were generated, co-registered and compared voxel-by-voxel with the 3D radiation dose plan within the parotid gland to assess the individual radiation dose-function relationship. Results: In each patient, voxel-values of K decreased with increasing radiation dose. Population based analysis showed a sigmoid dose response relationship of parotid gland, from which we estimated a threshold radiation dose of 16 Gy and a mean TD 5 of 30 Gy. TD 5 ranged from 7 to 50 Gy in the group of patients. Conclusions: Individual radiation dose response of parotid glands can be measured by dynamic 11 C-methionine PET. The dose response analysis revealed a sigmoid relationship, a threshold radiation dose of 16 Gy, and a mean TD 5 of 30 Gy

Radiation response issues for infrared detectors

Science.gov (United States)

Kalma, Arne H.

1990-01-01

Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

Study by electronic structure calculations of the radiation damage in the UO2 nuclear fuel: behaviour of the point defects and fission gases

International Nuclear Information System (INIS)

Vathonne, Emerson

2014-01-01

Uranium dioxide (UO 2 ) is worldwide the most widely used fuel in nuclear plants in the world and in particular in pressurized water reactors (PWR). In-pile the fission of uranium nuclei creates fission products and point defects in the fuel. The understanding of the evolution of these radiation damages requires a multi-scale modelling approach of the nuclear fuel, from the scale of the pellet to the atomic scale. We used an electronic structure calculation method based on the density functional theory (DFT) to model radiation damage in UO 2 at the atomic scale. A Hubbard-type Coulomb interaction term is added to the standard DFT formalism to take into account the strong correlations of the 5f electrons in UO 2 . This method is used to study point defects with various charge states and the incorporation and diffusion of krypton in uranium dioxide. This study allowed us to obtain essential data for higher scale models but also to interpret experimental results. In parallel of this study, three ways to improve the state of the art of electronic structure calculations of UO 2 have been explored: the consideration of the spin-orbit coupling neglected in current point defect calculations, the application of functionals allowing one to take into account the non-local interactions such as van der Waals interactions important for rare gases and the use of the Dynamical Mean Field Theory combined to the DFT method in order to take into account the dynamical effects in the 5f electron correlations. (author) [fr

Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation

Directory of Open Access Journals (Sweden)

Budzulyak S. I.

2014-08-01

Full Text Available High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over crystal. It is known that low-dose microwave irradiation can homogenize impurity distribution in a specimen. In the present work, we made an attempt to improve the detector material quality by using such post-technological treatment, as well as to study state variation for impurity-defect complexes. To this end, the effect of microwave irradiation on transformation of impurity-defect complexes in CdTe:Cl single crystals was investigated using low-temperature photoluminescence. It is shown that activation of ClTe donor centers by microwave irradiation for 10 s and presence of VCd acceptor centers in the specimens under investigation effectively facilitate formation of (VNd–ClTe defect centers at which excitons are bound. Detailed investigations of the band form for donor-acceptor pairs (DAPs in CdTe:Cl single crystals made it possible to determine the Huang—Rhys factor (that characterizes electron-phonon interaction in CdTe:Cl DAPs as a function of microwave treatment duration. It is shown for single crystals with NCl = 5·1017 cm–3 and 5·1019 cm–3 that the Huang—Rhys factor grows with microwave irradiation dose. This is related to both homogenization of donor and acceptor centers distribution and increase of donor—acceptor spacing. It is shown that microwave irradiation of CdTe:Cl single crystals results in concentration reduction for separate cadmium vacancies VCd because of formation of (VNd—ClTe defect centers at which excitons are bound.

Radiation Dose-Response Model for Locally Advanced Rectal Cancer After Preoperative Chemoradiation Therapy

International Nuclear Information System (INIS)

Appelt, Ane L.; Pløen, John; Vogelius, Ivan R.; Bentzen, Søren M.; Jakobsen, Anders

2013-01-01

Purpose: Preoperative chemoradiation therapy (CRT) is part of the standard treatment of locally advanced rectal cancers. Tumor regression at the time of operation is desirable, but not much is known about the relationship between radiation dose and tumor regression. In the present study we estimated radiation dose-response curves for various grades of tumor regression after preoperative CRT. Methods and Materials: A total of 222 patients, treated with consistent chemotherapy and radiation therapy techniques, were considered for the analysis. Radiation therapy consisted of a combination of external-beam radiation therapy and brachytherapy. Response at the time of operation was evaluated from the histopathologic specimen and graded on a 5-point scale (TRG1-5). The probability of achieving complete, major, and partial response was analyzed by ordinal logistic regression, and the effect of including clinical parameters in the model was examined. The radiation dose-response relationship for a specific grade of histopathologic tumor regression was parameterized in terms of the dose required for 50% response, D 50,i , and the normalized dose-response gradient, γ 50,i . Results: A highly significant dose-response relationship was found (P=.002). For complete response (TRG1), the dose-response parameters were D 50,TRG1 = 92.0 Gy (95% confidence interval [CI] 79.3-144.9 Gy), γ 50,TRG1 = 0.982 (CI 0.533-1.429), and for major response (TRG1-2) D 50,TRG1 and 2 = 72.1 Gy (CI 65.3-94.0 Gy), γ 50,TRG1 and 2 = 0.770 (CI 0.338-1.201). Tumor size and N category both had a significant effect on the dose-response relationships. Conclusions: This study demonstrated a significant dose-response relationship for tumor regression after preoperative CRT for locally advanced rectal cancer for tumor dose levels in the range of 50.4-70 Gy, which is higher than the dose range usually considered.

Electronic relaxations of radiative defects of the anion sublattice in cesium bromide crystals and exoemission of electrons

CERN Document Server

Galyij, P V

2002-01-01

The paper presents the results of investigations of thermostimulated exoelectron emission (TSEE) from CsBr crystal, excited by moderate doses (D <= 10 sup 4 Gy) of ultraviolet (h nu <= 7 eV) that selectively creates anion excitons and radiative defects in the anion sublattice. Having used the previously established connection between thermoactivated processes such as thermostimulated exoemission, electroconductivity, and luminescence in the irradiated crystal lattice, the concentrations of exoemission-active centers (EAC) and kinetics parameters of TSEE are calculated. The EAC concentration calculated on a base of the bulk, thermoactivated-recombinational, and band-gap Auger-like exoemission mechanisms, are in satisfactory agreement with the concentration of electron color centers in the irradiated crystals.

Dual responsive promoters to target therapeutic gene expression to radiation-resistant hypoxic tumor cells

International Nuclear Information System (INIS)

Chadderton, Naomi; Cowen, Rachel L.; Sheppard, Freda C.D.; Robinson, Suzanne; Greco, Olga; Scott, Simon D.; Stratford, Ian J.; Patterson, Adam V.; Williams, Kaye J.

2005-01-01

Purpose: Tumor hypoxia is unequivocally linked to poor radiotherapy outcome. This study aimed to identify enhancer sequences that respond maximally to a combination of radiation and hypoxia for use in genetic radiotherapy approaches. Methods and materials: The influence of radiation (5 Gy) and hypoxia (1% O 2 ) on reporter-gene expression driven by hypoxia (HRE) and radiation (Egr-1) responsive elements was evaluated in tumor cells grown as monolayers or multicellular spheroids. Hypoxia-inducible factor-1α (HIF-1α) and HIF-2α protein expression was monitored in parallel. Results: Of the sequences tested, an HRE from the phosphoglycerate kinase-1 gene (PGK-18[5+]) was maximally induced in response to hypoxia plus radiation in all 5 cell lines tested. The additional radiation treatment afforded a significant increase in the induction of PGK-18[5+] compared with hypoxia alone in 3 cell lines. HIF-1α/2α were induced by radiation but combined hypoxia/radiation treatment did not yield a further increase. The dual responsive nature of HREs was maintained when spheroids were irradiated after delivery of HRE constructs in a replication-deficient adenovirus. Conclusions: Hypoxia-responsive enhancer element sequences are dually responsive to combined radiation and hypoxic treatment. Their use in genetic radiotherapy in vivo could maximize expression in the most radio-resistant population at the time of radiation and also exploit microenvironmental changes after radiotherapy to yield additional switch-on

Impacts of reactor. Induced cladding defects on spent fuel storage

International Nuclear Information System (INIS)

Johnson, A.B.

1978-01-01

Defects arise in the fuel cladding on a small fraction of fuel rods during irradiation in water-cooled power reactors. Defects from mechanical damage in fuel handling and shipping have been almost negligible. No commercial water reactor fuel has yet been observed to develop defects while stored in spent fuel pools. In some pools, defective fuel is placed in closed canisters as it is removed from the reactor. However, hundreds of defective fuel bundles are stored in numerous pools on the same basis as intact fuel. Radioactive species carried into the pool from the reactor coolant must be dealt with by the pool purification system. However, additional radiation releases from the defective fuel during storage appear tu be minimal, with the possible exception of fuel discharged while the reactor is operating (CANDU fuel). Over approximately two decades, defective commercial fuel has been handled, stored, shipped and reprocessed. (author)

Radiation-induced augmentation of the immune response

International Nuclear Information System (INIS)

Anderson, R.E.; Lefkovits, I.; Troup, G.M.

1980-01-01

Radiation-induced augmentation of the immune response has been shown to occur both in vivo and in vitro. Evidence is presented to implicate injury to an extremely radiosensitive T cell in the expression of this phenomenon. Experiments are outlined which could be employed to support or reflect this hypothesis

Biological responses to low dose rate gamma radiation

International Nuclear Information System (INIS)

Magae, Junji; Ogata, Hiromitsu

2003-01-01

Linear non-threshold (LNT) theory is a basic theory for radioprotection. While LNT dose not consider irradiation time or dose-rate, biological responses to radiation are complex processes dependent on irradiation time as well as total dose. Moreover, experimental and epidemiological studies that can evaluate LNT at low dose/low dose-rate are not sufficiently accumulated. Here we analyzed quantitative relationship among dose, dose-rate and irradiation time using chromosomal breakage and proliferation inhibition of human cells as indicators of biological responses. We also acquired quantitative data at low doses that can evaluate adaptability of LNT with statistically sufficient accuracy. Our results demonstrate that biological responses at low dose-rate are remarkably affected by exposure time, and they are dependent on dose-rate rather than total dose in long-term irradiation. We also found that change of biological responses at low dose was not linearly correlated to dose. These results suggest that it is necessary for us to create a new model which sufficiently includes dose-rate effect and correctly fits of actual experimental and epidemiological results to evaluate risk of radiation at low dose/low dose-rate. (author)

In vivo study of the adaptive response induced by radiation of different types

International Nuclear Information System (INIS)

Klokov, D.Yu.; Zaichkina, S.I.; Rozanova, O.M.; Aptikaeva, G.F.; Akhmadieva, A.Kh.; Smirnova, E.N.; Surkenova, G.N.; Kuzin, A.M.

2000-01-01

Low doses of X- and gamma-rays are known to induce the adaptive response (AR), i.e. a reduction in the damage caused by subsequent high doses. Using micronucleus test, we investigated the in vivo induction of AR in mouse bone marrow cells by low doses of radiation of different types. In our experiments we used low-LET gamma-radiation, high-LET secondary radiation from 70 GeV protons and secondary biogenic radiation. The latter is a novel type of radiation discovered only recently. Secondary biogenic radiation is known to be induced in biological objects after exposure to radiation and thought to be responsible for stimulating and protecting effects in cells in response to external irradiation. To expose mice to the secondary biogenic radiation, animals were housed in plastic cages containing gamma-irradiated oat seeds as bedding and food for 2 weeks before challenging with a high dose (1.5 Gy at a dose rate of 1 Gy/min) of 60 Co gamma-radiation. It was found that the yield of cytogenetic damage in mice exposed to both secondary biogenic and gamma-radiation was significantly reduced as compared to that in animals exposed to the challenge dose alone, i.e. the AR was induced. Pretreatment of animals with a low dose of gamma-radiation (0.1 Gy at a dose rate of 0.125 Gy/min) also induced the AR. In contrast, preliminary exposure of mice to a low dose (0.09 Gy at a dose rate of 1 Gy/min) of secondary radiation from 70 GeV protons induced no AR, suggesting that triggering the cascade of events leading to the AR induction depends on the DNA single-strand to double- strand breaks ratio. The precise mechanisms underlying the AR are of great importance since the phenomenon of AR can be used for medical benefits and in assessment of risks for carcinogens. But they have not been elucidated well at present. Taken together, our results suggest the crucial role of particular types of initial DNA lesions and the secondary biogenic radiation induced in cells in response to external

A novel ATM-dependent checkpoint defect distinct from loss of function mutation promotes genomic instability in melanoma.

Science.gov (United States)

Spoerri, Loredana; Brooks, Kelly; Chia, KeeMing; Grossman, Gavriel; Ellis, Jonathan J; Dahmer-Heath, Mareike; Škalamera, Dubravka; Pavey, Sandra; Burmeister, Bryan; Gabrielli, Brian

2016-05-01

Melanomas have high levels of genomic instability that can contribute to poor disease prognosis. Here, we report a novel defect of the ATM-dependent cell cycle checkpoint in melanoma cell lines that promotes genomic instability. In defective cells, ATM signalling to CHK2 is intact, but the cells are unable to maintain the cell cycle arrest due to elevated PLK1 driving recovery from the arrest. Reducing PLK1 activity recovered the ATM-dependent checkpoint arrest, and over-expressing PLK1 was sufficient to overcome the checkpoint arrest and increase genomic instability. Loss of the ATM-dependent checkpoint did not affect sensitivity to ionizing radiation demonstrating that this defect is distinct from ATM loss of function mutations. The checkpoint defective melanoma cell lines over-express PLK1, and a significant proportion of melanomas have high levels of PLK1 over-expression suggesting this defect is a common feature of melanomas. The inability of ATM to impose a cell cycle arrest in response to DNA damage increases genomic instability. This work also suggests that the ATM-dependent checkpoint arrest is likely to be defective in a higher proportion of cancers than previously expected. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

The Dose Response Relationship for Radiation Carcinogenesis

Science.gov (United States)

Hall, Eric

2008-03-01

Recent surveys show that the collective population radiation dose from medical procedures in the U.S. has increased by 750% in the past two decades. It would be impossible to imagine the practice of medicine today without diagnostic and therapeutic radiology, but nevertheless the widespread and rapidly increasing use of a modality which is a known human carcinogen is a cause for concern. To assess the magnitude of the problem it is necessary to establish the shape of the dose response relationship for radiation carcinogenesis. Information on radiation carcinogenesis comes from the A-bomb survivors, from occupationally exposed individuals and from radiotherapy patients. The A-bomb survivor data indicates a linear relationship between dose and the risk of solid cancers up to a dose of about 2.5 Sv. The lowest dose at which there is a significant excess cancer risk is debatable, but it would appear to be between 40 and 100 mSv. Data from the occupation exposure of nuclear workers shows an excess cancer risk at an average dose of 19.4 mSv. At the other end of the dose scale, data on second cancers in radiotherapy patients indicates that cancer risk does not continue to rise as a linear function of dose, but tends towards a plateau of 40 to 60 Gy, delivered in a fractionated regime. These data can be used to estimate the impact of diagnostic radiology at the low dose end of the dose response relationship, and the impact of new radiotherapy modalities at the high end of the dose response relationship. In the case of diagnostic radiology about 90% of the collective population dose comes from procedures (principally CT scans) which involve doses at which there is credible evidence of an excess cancer incidence. While the risk to the individual is small and justified in a symptomatic patient, the same is not true of some screening procedures is asymptomatic individuals, and in any case the huge number of procedures must add up to a potential public health problem. In the

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

Defect production and annihilation in metals through electronic excitation by energetic heavy ion bombardment

Energy Technology Data Exchange (ETDEWEB)

Iwase, Akihiro [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

1997-03-01

Defect production, radiation annealing and defect recovery are studied in Ni and Cu irradiated with low-energy ({approx}1-MeV) and high-energy ({approx}100-MeV) ions. Irradiation of Ni with {approx}100-MeV ions causes an anomalous reduction, or even a complete disappearance of the stage-I recovery. This result shows that the energy transferred from excited electrons to lattice atoms through the electron-lattice interaction contributes to the annihilation of the stage-I interstitials. This effect is also observed in Ni as a large radiation annealing during 100-MeV heavy ion irradiation. On the other hand, in Cu thin foils, we find the defect production process strongly associated with electron excitation, where the defect production cross section is nearly proportional to S{sub e}{sup 2}. (author)

Responsibility, coresponsibility and responsibility to the future in radiation protection and the question of final disposal

International Nuclear Information System (INIS)

Gellermann, R.

2005-01-01

Based on philosophical terms and concepts the responsibility, coresponsibility and responsibility to the future of people working in radiation protection are discussed and some resultant conclusions concerning finals disposal are derived. (orig.)

Adriamycin-radiation combinations: drug induced delayed gastrointestinal radiosensitivity

International Nuclear Information System (INIS)

Schenken, L.L.; Burholt, D.R.; Kovacs, C.J.

1979-01-01

The administration of Adriamycin (ADR) results in acute short-term reductions in cell production within the gastrointestinal mucosa. Interactions between ADR doses and radiation appear minimized as the inter-treatment time interval expands to five days. However, as the times between drug administration and abdominal radiation exposure are further lengthened (from 14 to 49 days), a progressively severe defect in post-irradiation mucosal cell production is noted. Although the mucosa appears abnormal histologically and crypt cell cellularity and cell production are normal, the proliferative response following radiation is reduced by as much as 50% if ADR is given 7 weeks prior to the radiation exposure. We postulate that this effect is a manifestation of latent damage to the stem cell compartment within the crypt or that secondary support systems such as mucosal vascularity have been compromised by ADR

Radiation response and chromatin dynamics

International Nuclear Information System (INIS)

Ikura, Tsuyoshi

2009-01-01

Described is a recent progress in studies of chromatin structural alterations induced by DNA damage by radiation. DNA in eukaryotes exists in the chromatin structure and different mechanisms of response to damage and repair of DNA from those in prokaryotes have been recognized. Chromatin is composed from its unit structure of mono-nucleosome, which is formed from DNA and an octamer of core histones of H2A, H2B, H3 and H4. When DNA is damaged, histone structural alterations are required for repair factors and checkpoint proteins to access the damaged site. At the actual genome damage, chemical modification of histone to work as a code occurs dependently on the damage where chromatin remodeling factors and histone chaperone participate for structural alteration and remodeling. As well, the exchange of histone variants and fluidization of histones are recently reported. Known chemical modification involves phosphorylation, acetylation and ubiquitination of H2AX (a variant of H2A), and acetylation and methylation of H3. Each complex of TIP60, NuA4 and INO80 is known to be included in the regulation of chromatin with damaged/repaired DNA for remodeling, but little is known about recruitment of the factors concerned at the damage site. Regulatory mechanisms in above chromatin dynamics with consideration of quality and timing of radiation should be further elucidated for understanding the precise response to DNA damage. (K.T.)

Unravelling radiation response: from public health to personalized radiotherapy

International Nuclear Information System (INIS)

Manna, Soumen Kanti

2017-01-01

Understanding the mechanism underlying response to ionizing radiation exposure is at the heart of radiation biology and its applications. This presentation will showcase how the mass spectrometry-based global profiling helped to identify not only potential age-independent biomarkers of ionizing radiation exposure in mice but also a hitherto unexplored link between DNA repair and polyamine metabolism at an organismal level. It will then provide a glimpse of how a combination of metabolomics and molecular biological tools combined to elucidate the metabolic reprogramming underlying therapeutic resistance of cancer cells. It will then elaborate how an integrated -omics approach could be adopted to understand the heterogeneity in the effects ionizing radiation in the context of development and health. Finally, it will present a framework on how clinicians, epidemiologists and basic researchers can come together to usher in a new era of personalized radiation therapy as well as to develop a paradigm of personalized counter measures against radiation exposure. (author)

Impact of time to maternal interview on interview responses in the National Birth Defects Prevention Study.

Science.gov (United States)

Tinker, Sarah C; Gibbs, Cassandra; Strickland, Matthew J; Devine, Owen J; Crider, Krista S; Werler, Martha M; Anderka, Marlene T; Reefhuis, Jennita

2013-06-01

Prenatal exposures often are assessed using retrospective interviews. Time from exposure to interview may influence data accuracy. We investigated the association of time to interview (TTI) with aspects of interview responses in the National Birth Defects Prevention Study, a population-based case-control study of birth defects in 10 US states. Mothers completed a computer-assisted telephone interview 1.5-24 months after their estimated date of delivery. Proxy metrics for interview quality were whether certain exposures were reported, whether the start month of reported medication use or illness was reported, or whether responses were missing. Interaction by case status was assessed. Interviews were completed with 30,542 mothers (22,366 cases and 8,176 controls) who gave birth between 1997 and 2007. Mothers of cases were interviewed later than were mothers of controls (11.7 months vs. 9.5 months, respectively). In adjusted analyses, having a TTI that was greater than 6 months was associated with only a few aspects of interview responses (e.g., start month of pseudoephedrine use). Interaction by case-control status was observed for some exposures; mothers of controls had a greater reduction in interview quality with increased TTI in these instances (e.g., report of morning sickness, start month of acetaminophen use and ibuprofen use). The results suggest that TTI might impact interview responses; however, the impact may be minimal and specific to the type of exposure.

Radiation response of Philippine natural rubber latex

International Nuclear Information System (INIS)

Dela Rosa, A.M.; Abad, L.V.; Ana-Relleve, L.S.; Tranquilan-Aranilla, C.; Pascual, C.L.

1998-01-01

Our earlier work has shown that the natural rubber latex (NRL) produced and processed in the Philippines is suited for radiation vulcanization. The cast films from NRL with 50% TSC exhibited maximum tensile strengths of 25-32 MPa at 15 kGy, which is the vulcanization dose or Dv. In the manufacture of dipped NRL products, certain specifications such as %TSC, protein content and tensile properties, must be met to ensure an acceptable product. For radiation vulcanization of natural rubber latex (RVNRL) to be accepted as an alternative process, it must also meet the requirements. Thus, this paper presents additional data on the radiation response of local NRL at different total solids contents (TSC), leachable proteins from NRL films as a function of dose, and the thermal activities of irradiated natural rubber latex (INRL). Different formulations of NRL showed varying tolerances to nBA. Data showed that as %TSC increases, the maximum concentration of nBA that can be added without affecting the stability of the latex decreases. The Dv increases as the %TSC increases and the nBA content decreases. This difference in response may be attributed to a lower concentration of nBA in formulations with higher %TSC. These data indicate that the parameters in the radiation treatment will be dictated by the intended applications of INRL. The thermogravimetric data showed greater stability of INRL to thermal oxidation relative to the unirradiated NRL, which correlates directly with the tensile properties of the INRL. A radiation dose of 10 kGy increased the amount of proteins leached from cast latex films. The amount of extractable proteins did not increase significantly at higher doses. The SDS PAGE analysis of the extractable proteins from unirradiated latex film showed distinct bands. An additional band at 60 Kda appeared at 10 kGy. All these bands became diffuse at higher doses, indicating the radiolysis of the proteins

Computer simulation of the interaction between an extended dislocation and radiation defects in the fcc lattice

International Nuclear Information System (INIS)

Kuramoto, E.; Nakamura, Y.; Tsutsumi, T.

1993-01-01

The interaction between an extended dislocation and a radiation-induced defect, especially, a self-interstitial atom (SIA), has been investigated in the model fcc lattice by computer simulation technique. An SIA was absorbed into the core of one of the two partial dislocations of the extended screw dislocation as a crowdion which extends along the dislocation line. Under the applied shear stress this crowdion acted as a pinning point, resulting in irradiation hardening. On the other hand, an SIA was absorbed at the jog site of the extended edge dislocation (at one of the two jog sites on two partial dislocations) and after some relaxation the total jog was shifted to one atomic distance through the spreading out of the strain due to an SIA from one partial side to the other side. (orig.)

Quartz gauge response in ion radiation

International Nuclear Information System (INIS)

Taylor, P.E.; Gilbert, P.H.; Kernthaler, C.; Anderson, M.U.

1995-01-01

This paper describes recent work to make high quality quartz gauge (temporal and spatial) shock wave measurements in a pulsed ion beam environment. Intense ion beam radiation, nominally 1 MeV protons, was deposited into material samples instrumented with shunted quartz gauges adjacent to the ion deposition zone. Fluence levels were chosen to excite three fundamentally different material response modes (1) strong vapor, (2) combined vapor and melt phase and (3) thermoelastic material response. A unique quartz gauge design was utilized that employed printed circuit board (PCB) technology to facilitate electrical shielding, ruggedness, and fabrication at sign e meeting the essential one dimensional requirements of the characterized Sandia shunted quartz gauge. Shock loading and unloading experiments were conducted to evaluate the piezoelectric response of the coupled quartz gauge/PCB transducer. High fidelity shock wave profiles were recorded at the three ion fluence levels providing dynamic material response data for vapor, melt and solid material phases

Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration

International Nuclear Information System (INIS)

Lindstroem, G.; Ahmed, M.; Albergo, S.; Allport, P.; Anderson, D.; Andricek, L.; Angarano, M.M.; Augelli, V.; Bacchetta, N.; Bartalini, P.; Bates, R.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Borchi, E.; Botila, T.; Brodbeck, T.J.; Bruzzi, M.; Budzynski, T.; Burger, P.; Campabadal, F.; Casse, G.; Catacchini, E.; Chilingarov, A.; Ciampolini, P.; Cindro, V.; Costa, M.J.; Creanza, D.; Clauws, P.; Da Via, C.; Davies, G.; De Boer, W.; Dell'Orso, R.; De Palma, M.; Dezillie, B.; Eremin, V.; Evrard, O.; Fallica, G.; Fanourakis, G.; Feick, H.; Focardi, E.; Fonseca, L.; Fretwurst, E.; Fuster, J.; Gabathuler, K.; Glaser, M.; Grabiec, P.; Grigoriev, E.; Hall, G.; Hanlon, M.; Hauler, F.; Heising, S.; Holmes-Siedle, A.; Horisberger, R.; Hughes, G.; Huhtinen, M.; Ilyashenko, I.; Ivanov, A.; Jones, B.K.; Jungermann, L.; Kaminsky, A.; Kohout, Z.; Kramberger, G.; Kuhnke, M.; Kwan, S.; Lemeilleur, F.; Leroy, C.; Letheren, M.; Li, Z.; Ligonzo, T.; Linhart, V.; Litovchenko, P.; Loukas, D.; Lozano, M.; Luczynski, Z.; Lutz, G.; MacEvoy, B.; Manolopoulos, S.; Markou, A.; Martinez, C.; Messineo, A.; Miku, M.; Moll, M.; Nossarzewska, E.; Ottaviani, G.; Oshea, V.; Parrini, G.; Passeri, D.; Petre, D.; Pickford, A.; Pintilie, I.; Pintilie, L.; Pospisil, S.; Potenza, R.; Radicci, V.; Raine, C.; Rafi, J.M.; Ratoff, P.N.; Richter, R.H.; Riedler, P.; Roe, S.; Roy, P.; Ruzin, A.; Ryazanov, A.I.; Santocchia, A.; Schiavulli, L.; Sicho, P.; Siotis, I.; Sloan, T.; Slysz, W.; Smith, K.; Solanky, M.; Sopko, B.; Stolze, K.; Sundby Avset, B.; Svensson, B.; Tivarus, C.; Tonelli, G.; Tricomi, A.; Tzamarias, S.; Valvo, G.; Vasilescu, A.; Vayaki, A.; Verbitskaya, E.; Verdini, P.; Vrba, V.; Watts, S.; Weber, E.R.; Wegrzecki, M.; Wegrzecka, I.; Weilhammer, P.; Wheadon, R.; Wilburn, C.; Wilhelm, I.; Wunstorf, R.; Wuestenfeld, J.; Wyss, J.; Zankel, K.; Zabierowski, P.; Zontar, D.

2001-01-01

This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstroem et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail

Determinates of tumor response to radiation: Tumor cells, tumor stroma and permanent local control

International Nuclear Information System (INIS)

Li, Wende; Huang, Peigen; Chen, David J.; Gerweck, Leo E.

2014-01-01

Background and purpose: The causes of tumor response variation to radiation remain obscure, thus hampering the development of predictive assays and strategies to decrease resistance. The present study evaluates the impact of host tumor stromal elements and the in vivo environment on tumor cell kill, and relationship between tumor cell radiosensitivity and the tumor control dose. Material and methods: Five endpoints were evaluated and compared in a radiosensitive DNA double-strand break repair-defective (DNA-PKcs −/− ) tumor line, and its DNA-PKcs repair competent transfected counterpart. In vitro colony formation assays were performed on in vitro cultured cells, on cells obtained directly from tumors, and on cells irradiated in situ. Permanent local control was assessed by the TCD 50 assay. Vascular effects were evaluated by functional vascular density assays. Results: The fraction of repair competent and repair deficient tumor cells surviving radiation did not substantially differ whether irradiated in vitro, i.e., in the absence of host stromal elements and factors, from the fraction of cells killed following in vivo irradiation. Additionally, the altered tumor cell sensitivity resulted in a proportional change in the dose required to achieve permanent local control. The estimated number of tumor cells per tumor, their cloning efficiency and radiosensitivity, all assessed by in vitro assays, were used to predict successfully, the measured tumor control doses. Conclusion: The number of clonogens per tumor and their radiosensitivity govern the permanent local control dose

Temperature variation of non-radiative recombination rate in a-Si:H films

Energy Technology Data Exchange (ETDEWEB)

Ogihara, C. [Department of Applied Science, Yamaguchi University, Ube 755-8611 (Japan); Morigaki, K. [Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan); resent address: C-305, 2-12 Wakabadai, Inagi, Tokyo 206-0824 (Japan)

2012-12-15

Temperature variation of the recombination rates has been investigated for the electron-hole pairs responsible for defect PL in a defective a-Si:H film as grown. The results are compared with those obtained for a high-quality a-Si:H film after illumination. The results of the nonradiative recombination rate are fitted by a theoretical prediction for the case of strong electron-phonon coupling in the case of the defective a-Si:H film similarly to the case of the illuminated high-quality a-Si:H film. Difference between the frequency of the phonon associated with the non-radiative recombination process in the defective a-Si:H film and that in the illuminated highquality a-Si:H film is discussed by considering the influence of the amorphous network in the a-Si:H films affected by the preparation conditions and the nature of the native and photo-created defects. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Response dependence of a ring ionization chamber response on the size of the X radiation field

International Nuclear Information System (INIS)

Yoshizumi, Maira T.; Caldas, Linda V.E.

2009-01-01

A ring monitor ionization chamber was developed at the IPEN-Sao Paulo, Brazil, fixed on a system of collimators which determine the dimension of the radiation field size. This work verified that the ring chamber response depends on the exponential form with the size of de radiation field

Radiation response of the central nervous system

International Nuclear Information System (INIS)

Schultheiss, T.E.; Kun, L.E.; Ang, K.K.; Stephens, L.C.

1995-01-01

This report reviews the anatomical, pathophysiological, and clinical aspects of radiation injury to the central nervous system (CNS). Despite the lack of pathognomonic characteristics for CNS radiation lesions, demyelination and malacia are consistently the dominant morphological features of radiation myelopathy. In addition, cerebral atrophy is commonly observed in patients with neurological deficits related to chemotherapy and radiation, and neurocognitive deficits are associated with diffuse white matter changes. Clinical and experimental dose-response information have been evaluated and summarized into specific recommendations for the spinal cord and brain. The common spinal cord dose limit of 45 Gy in 22 to 25 fractions is conservative and can be relaxed if respecting this limit materially reduces the probability of tumor control. It is suggested that the 5% incidence of radiation myelopathy probably lies between 57 and 61 Gy to the spinal cord in the absence of dose modifying chemotherapy. A clinically detectable length effect for the spinal cord has not been observed. The effects of chemotherapy and altered fractionation are also discussed. Brain necrosis in adults is rarely noted below 60 Gy in conventional fractionation, with imaging and clinical changes being observed generally only above 50 Gy. However, neurocognitive effects are observed at lower doses, especially in children. A more pronounced volume effect is believed to exist in the brain than in the spinal cord. Tumor progression may be hard to distinguish from radiation and chemotherapy effects. Diffuse white matter injury can be attributed to radiation and associated with neurological deficits, but leukoencephalopathy is rarely observed in the absence of chemotherapy. Subjective, objective, management, and analytic (SOMA) parameters related to radiation spinal cord and brain injury have been developed and presented on ordinal scales

Radiation response of the central nervous system

International Nuclear Information System (INIS)

Schultheiss, T.E.; Kun, L.E.; Stephens, L.C.

1995-01-01

This report reviews the anatomical, pathophysiological, and clinical aspects of radiation injury to the central nervous system (CNS). Despite the lack of pathoGyomonic characteristics for CNS radiation lesions, demyelination and malacia are consistently the dominant morphological features of radiation myelopathy. In addition, cerebral atrophy is commonly observed in patients with neurological deficits related to chemotherapy and radiation, and neurocognitive deficits are associated with diffuse white matter changes. Clinical and experimental dose-response information have been evaluated and summarized into specific recommendations for the spinal cord and brain. The common spinal cord dose limit of 45 Gn in 22 to 25 fractions is conservative and can be relaxed if respecting this limit materially reduces the probability of tumor control. It is suggested that the 5% incidence of radiation myelopathy probably lies between 57 and 61 Gy to the spinal cord in the absence of dose modifying chemotherapy. A clinically detectable length effect for the spinal cord has not been observed. The effects of chemotherapy and altered fractionation are also discussed. Brain necrosis in adults is rarely noted below 60 Gy in conventional fractionation, with imaging and clinical changes being observed generally only above 50 Gy. However, neurocognitive effects are observed at lower doses, especially in children. A more pronounced volume effect is believed to exist in the brain than in the spinal cord. Tumor progression may be hard to distinguish from radiation and chemotherapy effects. Diffuse white matter injury can be attributed to radiation and associated with neurological deficits, but leukoencephalopathy is rarely observed in the absence of chemotherapy. Subjective, objective, management, and analytic (SOMA) parameters related to radiation spinal cord and brain injury have been developed and presented on ordinal scales. 140 refs., 3 figs., 6 tabs

Verifying a nuclear weapon`s response to radiation environments

Energy Technology Data Exchange (ETDEWEB)

Dean, F.F.; Barrett, W.H.

1998-05-01

The process described in the paper is being applied as part of the design verification of a replacement component designed for a nuclear weapon currently in the active stockpile. This process is an adaptation of the process successfully used in nuclear weapon development programs. The verification process concentrates on evaluating system response to radiation environments, verifying system performance during and after exposure to radiation environments, and assessing system survivability.

Genistein-induced alterations of radiation-responsive gene expression

Energy Technology Data Exchange (ETDEWEB)

Grace, M.B. [Armed Forces Radiobiology Research Institute, 8901 Wisconsin Avenue, Bethesda, MD 20889-5603 (United States)], E-mail: grace@afrri.usuhs.mil; Blakely, W.F.; Landauer, M.R. [Armed Forces Radiobiology Research Institute, 8901 Wisconsin Avenue, Bethesda, MD 20889-5603 (United States)

2007-07-15

In order to clarify the molecular mechanism of radioprotection and understand biological dosimetry in the presence of medical countermeasure-radioprotectants, their effects on ionizing radiation (IR)-responsive molecular biomarkers must be examined. We used genistein in a radiation model system and measured gene expression by multiplex QRT-PCR assay in drug-treated healthy human blood cultures. Genistein has been demonstrated to be a radiosensitizer of malignant cells and a radioprotector against IR-induced lethality in a mouse model. Whole-blood cultures were supplemented with 50, 100, and 200{mu}M concentrations of genistein, 16 h prior to receiving a 2-Gy ({sup 60}Co-{gamma} rays, 10 cGy/min) dose of IR. Total RNA was isolated from whole blood 24 h postirradiation for assessments. Combination treatments of genistein and IR resulted in no significant genistein effects on ddb2 and bax downstream transcripts to p53, or proliferating cell-nuclear antigen, pcna, necessary for DNA synthesis and cell-cycle progression. Use of these radiation-responsive targets would be recommended for dose-assessment applications. We also observed decreased expression of pro-survival transcript, bcl-2. Genistein and IR-increased expression of cdkn1a and gadd45a, showing that genistein also stimulates p53 transcriptional activity. These results confirm published molecular signatures for genistein in numerous in vitro models. Evaluation of gene biomarkers may be further exploited for devising novel radiation countermeasure and/or therapeutic strategies.

Freely-migrating-defect production during irradiation at elevated temperatures

Science.gov (United States)

Hashimoto, T.; Rehn, L. E.; Okamoto, P. R.

1988-12-01

Radiation-induced segregation in a Cu-1 at. % Au alloy was investigated using in situ Rutherford backscattering spectrometry. The amount of Au atom depletion in the near surface region was measured as a function of dose during irradiation at 350 °C with four ions of substantially different masses. Relative efficiencies for producing freely migrating defects were evaluated for 1.8-MeV 1H, 4He, 20Ne, and 84Kr ions by determining beam current densities that gave similar radiation-induced segregation rates. Irradiations with primary knock-on atom median energies of 1.7, 13, and 79 keV yielded relative efficiencies of 53, 7, and 6 %, respectively, compared to the irradiation with a 0.83-keV median energy. Despite quite different defect and host alloy properties, the relative efficiencies for producing freely migrating defects determined in Cu-Au are remarkably similar to those found previously in Ni-Si alloys. Hence, the reported efficiencies appear to offer a reliable basis for making quantitative correlations of microstructural changes induced in different alloy systems by a wide variety of irradiation particles.

Radiation response of skin in young and old rats

Energy Technology Data Exchange (ETDEWEB)

Hamlet, R.; Hopewell, J.W. (Churchill Hospital, Oxford (UK))

1982-11-01

The results of this investigation clearly demonstrate the different radiation skin response in rats of differing ages. The reasons for these differences cannot be clarified until cell kinetic studies have been completed. These results obtained for rodent skin would appear to be in disagreement with the available data for human skin (Rubin and Casarett 1968) where no marked age-related changes were reported. Also, in pig skin studies (Hopewell and Young 1982) there was no evidence of an age effect in the dermal vascular response in 3-12-month-old animals. This may be related to the different tissue being investigated or it may reflect important species differences. Whatever the reasons behind these observations, the different skin response to radiation in rats of 7, 14 and 52 weeks of age has clearly been demonstrated and should be borne in mind when extrapolating data with rodent skin to the clinical situation.

Respiratory activity as a determinant of radiation survival response

Energy Technology Data Exchange (ETDEWEB)

Bruce, A K; Berner, J D [State Univ. of New York, Buffalo (USA). Dept. of Biology

1976-09-01

Respiration is depressed in irradiated bacteria reaching a minimum level in most strains at 1-3 h after exposure when incubated in growth medium. Since a delay in response is observed, direct action on respiratory enzymes is unlikely. The dosage response of respiration varies widely in the strains studied. All strains exhibit two-component dosage-response curves. The facts suggest that respiration is a major factor in influencing cell survival and may be the principal mechanism through which chemical agents modify radiation response.

Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons

Science.gov (United States)

Radu, R.; Pintilie, I.; Makarenko, L. F.; Fretwurst, E.; Lindstroem, G.

2018-04-01

This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 × 1014 cm-2 and 6 × 1014 cm-2. After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 °C to 300 °C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 °C, but annealing-out quickly in DOFZ material at temperatures higher than 200 °C , with a high frequency factor of the order of 1013 s-1. Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect.

Participation of different genes in the ruptures repair of double chain in Escherichia coli stumps exposed to gamma radiation

International Nuclear Information System (INIS)

Serment G, J. H.; Martinez M, E.; Alcantara D, D.

2013-01-01

All living organisms are naturally exposed to radiation from different sources. Ionizing radiation produces a plethora of lesions upon DNA that can be categorized as single and double strand breaks and base damage. Among them, unrepaired double strand breaks (Dbs) have the greatest biological significance, since they are responsible of cell death. In Escherichia coli this kind of lesions are repaired mostly by homologous recombination. In this work the participation of some recombination genes in the repair of Dbs is evaluated. Escherichia coli defective strains were exposed to gamma radiation and incubated for different periods in ideal conditions. Both micro electrophoresis and pulse field gel electrophoresis techniques were used to evaluate the kinetics of repair of such lesions, reflecting the importance of each defective gene in the process. (Author)

Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation

International Nuclear Information System (INIS)

Gayduchenko, I.; Kardakova, A.; Voronov, B.; Finkel, M.; Fedorov, G.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.

2015-01-01

Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors

Lithium niobate. Defects, photorefraction and ferroelectric switching

Energy Technology Data Exchange (ETDEWEB)

Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

2008-07-01

The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

Radiation effects on tumor-specific DTH response, 2

International Nuclear Information System (INIS)

Nobusawa, Hiroshi; Hachisu, Reiko.

1991-01-01

Tumor-specific immunity was induced in C3H mice by immunizing with syngeneic MH134 hepatoma cells. Radiation sensitivity of anti-tumor activity of immunized spleen cells were examined and compared with the radiation sensitivity of the delayed-type hypersensitivity (DTH)-response. The spleen cells were irradiated in vitro, then mixed with the tumor cells. DTH-response intensity was determined from the footpad increment twenty-four hours after inoculation of tumor cells with immunized spleen cells. Anti-tumor activity of the spleen cells, based on growth inhibition of tumor cells, was measured by a cytostatic test in vivo with diffusion chambers. Tumor-specific DTH response was suppressed dose-dependently in the range of 12-24 Gy irradiation. No suppression was observed below 12 Gy. Without irradiation, growth of tumor cells was inhibited by immunized spleen cells more effectively than by normal spleen cells. Anti-tumor activity of immunized and normal spleen cells was diminished by irradiation doses of 20 Gy and 10 Gy, respectively. Comparing our report with others that analyzed the type of anti-tumor effector cells induced in this experimental system, we concluded that tumor-specific anti-tumor activity (tumor growth inhibition in vivo) that was radiosensitive at 10-20 Gy depended on a DTH-response. (author)

Generation and alteration of the defects induced by particle irradiation and electromagnetic radiation in alkali halogen compounds

International Nuclear Information System (INIS)

Nistor, L.C.

1979-01-01

Interactions between electron beams, CO 2 - laser radiation and alkali halogen compound have led to interesting results: 1. The development of two types of F-centre respectively in normal lattice or near the dislocations. 2. The beginning of metal colloids development process at low temperature when a thermal treatment is applied. 3. An experimental confirmation of the Pooley-Hersh model for crystal defects has been brought up. 4. The surface penetration is an explosive process. 5. Surface polygonizations were also investigated. A model has been proposed to describe the destructive channels development within alkali halogen crystals with molecular anions impurities of less than 10 ppm. KCl monocrystals of advanced purity level was prepared for building up passive optical components of strong CO 2 lasers. (author)

Contrasting Responses of Marine and Freshwater Photosynthetic Organisms to UVB Radiation: A Meta-Analysis

KAUST Repository

Jin, Peng

2017-03-14

Ultraviolet-B (UVB) radiation is a global stressor that has profound impacts on freshwater and marine ecosystems. However, an analysis of the patterns of sensitivity to UVB radiation across aquatic photosynthetic organisms has not yet been published. Here, we performed a meta-analysis on results reported in 214 studies compiled from the published literature to quantify and compare the magnitude of responses of aquatic photosynthetic organisms to changes in UVB radiation. The meta-analysis was conducted on observations of marine (n = 893) and freshwater macroalgae (n = 126) and of marine (n = 1,087) and freshwater (n = 2,889) microalgae (total n = 4,995). Most of these studies (85%) analyzed the performance of organisms exposed to natural solar radiation when UVB was partially or totally reduced compared with the organismal performance under the full solar radiation spectrum, whereas the remaining 15% of the studies examined the responses of organisms to elevated UVB radiation mostly using artificial lamps. We found that marine photosynthetic organisms tend to be more sensitive than freshwater photosynthetic organisms to UVB radiation; responses to either decreased or increased UVB radiation vary among taxa; the mortality rate is the most sensitive of the trait responses to elevated UVB radiation, followed by changes in cellular and molecular traits; the sensitivity of microalgae to UVB radiation is dependent on size, with small-celled microalgae more sensitive than large-celled microalgae to UVB radiation. Thick macroalgae morphotypes were the less sensitive to UVB, but this effect could not be separated from phylogenetic differences. The high sensitivity of marine species, particularly the smallest photosynthetic organisms, to increased UVB radiation suggests that the oligotrophic ocean, a habitat comprising 70% of the world\\'s oceans with high UVB penetration and dominated by picoautotrophs, is extremely vulnerable to changes in UVB radiation.

The incidence and functional consequences of RT-associated cardiac perfusion defects

International Nuclear Information System (INIS)

Marks, Lawrence B.; Yu Xiaoli; Prosnitz, Robert G.; Zhou Sumin; Hardenbergh, Patricia H.; Blazing, Michael; Hollis, Donna; Lind, Pehr; Tisch, Andrea; Wong, Terence Z.; Borges-Neto, Salvador

2005-01-01

Purpose: Radiation therapy (RT) for left-sided breast cancer has been associated with cardiac dysfunction. We herein assess the temporal nature and volume dependence of RT-induced left ventricular perfusion defects and whether these perfusion defects are related to changes in cardiac wall motion or alterations in ejection fraction. Methods: From 1998 to 2001, 114 patients were enrolled onto an IRB-approved prospective clinical study to assess changes in regional and global cardiac function after RT for left-sided breast cancer. Patients were imaged 30 to 60 minutes after injection of technetium 99m sestamibi or tetrofosmin. Post-RT perfusion scans were compared with the pre-RT studies to assess for RT-induced perfusion defects as well as functional changes in wall motion and ejection fraction. Two-tailed Fisher's exact test and the Cochran-Armitage test for linear trends were used for statistical analysis. Results: The incidence of new perfusion defects 6, 12, 18, and 24 months after RT was 27%, 29%, 38%, and 42%, respectively. New defects occurred in approximately 10% to 20% and 50% to 60% of patients with less than 5%, and greater than 5%, of their left ventricle included within the RT fields, respectively (p = 0.33 to 0.00008). The rates of wall motion abnormalities in patients with and without perfusion defects were 12% to 40% versus 0% to 9%, respectively; p values were 0.007 to 0.16, depending on the post-RT interval. Conclusions: Radiation therapy causes volume-dependent perfusion defects in approximately 40% of patients within 2 years of RT. These perfusion defects are associated with corresponding wall-motion abnormalities. Additional study is necessary to better define the long-term functional consequences of RT-induced perfusion defects

Climate Response to Negative Greenhouse Gas Radiative Forcing in Polar Winter

Science.gov (United States)

Flanner, M. G.; Huang, X.; Chen, X.; Krinner, G.

2018-02-01

Greenhouse gas (GHG) additions to Earth's atmosphere initially reduce global outgoing longwave radiation, thereby warming the planet. In select environments with temperature inversions, however, increased GHG concentrations can actually increase local outgoing longwave radiation. Negative top of atmosphere and effective radiative forcing (ERF) from this situation give the impression that local surface temperatures could cool in response to GHG increases. Here we consider an extreme scenario in which GHG concentrations are increased only within the warmest layers of winter near-surface inversions of the Arctic and Antarctic. We find, using a fully coupled Earth system model, that the underlying surface warms despite the GHG addition exerting negative ERF and cooling the troposphere in the vicinity of the GHG increase. This unique radiative forcing and thermal response is facilitated by the high stability of the polar winter atmosphere, which inhibit thermal mixing and amplify the impact of surface radiative forcing on surface temperature. These findings also suggest that strategies to exploit negative ERF via injections of short-lived GHGs into inversion layers would likely be unsuccessful in cooling the planetary surface.