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Sample records for quantum wells grown

  1. Spin structure of electron subbands in (110)-grown quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Nestoklon, M. O.; Tarasenko, S. A. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Jancu, J.-M. [FOTON-INSA Laboratory, UMR 6082 au CNRS, INSA de Rennes, 35043 Rennes Cedex (France); Voisin, P. [CNRS-Laboratoire de Photonique et de Nanostructures, 91460 Marcoussis (France)

    2013-12-04

    We present the theory of fine structure of electron states in symmetric and asymmetric zinc-blende-type quantum wells with the (110) crystallographic orientation. By combining the symmetry analysis, sp{sup 3}d{sup 5}s* tight-binding method, and envelope-function approach we obtain quantitative description of in-plane wave vector, well width and applied electric field dependencies of the zero-magnetic-field spin splitting of electron subbands and extract spin-orbit-coupling parameters.

  2. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.

    Science.gov (United States)

    Li, Zhenhua; Wu, Jiang; Wang, Zhiming M; Fan, Dongsheng; Guo, Aqiang; Li, Shibing; Yu, Shui-Qing; Manasreh, Omar; Salamo, Gregory J

    2010-04-22

    The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100), (210), (311), and (731) substrates. A broad photoluminescence emission peak (~950 nm) with a full width at half maximum (FWHM) of 48 nm is obtained from the sample grown on (210) substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100) substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311) with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  3. InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications

    Directory of Open Access Journals (Sweden)

    Wu Jiang

    2010-01-01

    Full Text Available Abstract The morphological and optical properties of In0.2Ga0.8As/GaAs quantum wells grown on various substrates are investigated for possible application to superluminescent diodes. The In0.2Ga0.8As/GaAs quantum wells are grown by molecular beam epitaxy on GaAs (100, (210, (311, and (731 substrates. A broad photoluminescence emission peak (~950 nm with a full width at half maximum (FWHM of 48 nm is obtained from the sample grown on (210 substrate at room temperature, which is over four times wider than the quantum well simultaneously grown on (100 substrate. On the other hand, a very narrow photoluminescence spectrum is observed from the sample grown on (311 with FWHM = 7.8 nm. The results presented in this article demonstrate the potential of high-index GaAs substrates for superluminescent diode applications.

  4. Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gallacher, K.; Millar, R. W.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Ballabio, A.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo Territoriale di Como, Via Anzani 42, Como I-22100 (Italy); Bashir, A.; MacLaren, I. [School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Ortolani, M. [Center for Life NanoScience@Sapienza, Istituto Italiano di Tecnologia, Viale Regina Elena 291, Rome I-00161 (Italy)

    2016-02-29

    Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

  5. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  6. Photoluminescence of ZnSe-ZnS Single Quantum Wells Grown by Vapour Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    吕有明; 申德振; 刘益春; 李炳辉; 张吉英; 范希武; 饭田诚之; 加藤有行

    2002-01-01

    We study the photoluminescence (PL) of ultra thin layer ZnSe quantum wells in ZnS barriers. Samples with different well widths are grown by vapour phase epitaxy and the PL spectra of these samples are measured by the excitation of a 500 W Hg lamp. The peak positions of the bands coming from the excitonic luminescence show a larger blueshift with respect to the energy of free excitons in the ZnSe bulk material. The observed variation of the full width at half maximum and peak position of the bands in the spectra with the well width are interpreted to the formation of the ZnSxSe1-x alloy layer due to the interdiffusion in the interfaces between ZnSe and ZnS.According to the behaviour of the excitons in the smaller conduction band offset, the exciton binding energy is estimated from the dependence of the PL intensity on the temperature. From this result, excitons seem to show nearly three-dimensional characteristics.

  7. Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance

    Institute of Scientific and Technical Information of China (English)

    QU Yu-Hua; JIANG De-Sheng; WU Dong-Hai; NIU Zhi-Chuan; SUN Zheng

    2005-01-01

    @@ Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methodsdisplay high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S shaped temperature dependence of the PL peak position is found in the In0.42 Ga0.58As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.

  8. Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Ko, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L.

    2008-11-01

    a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL.

  9. Multi-wavelength emitting InGan/GaN quantum well grown on V-shaped gan(1101) microfacet.

    Science.gov (United States)

    Kang, Eun-Sil; Ju, Jin-Woo; Kim, Jin Soo; Ahn, Haeng-Keun; Lee, June Key; Kim, Jin Hyeok; Shin, Dong-Chan; Lee, In-Hwan

    2007-11-01

    InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

  10. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

    Science.gov (United States)

    Kesaria, M.; de la Mare, M.; Krier, A.

    2016-11-01

    Room temperature photoresponse in the mid-infrared spectral region is demonstrated from InAsSbN/InAs multi-quantum well photodiodes grown by nitrogen plasma assisted molecular beam epitaxy. The structural quality of the InAsSbN MQWs was ascertained in situ by reflection high energy electron diffraction and ex situ by high resolution x-ray diffraction and photoluminescence measurements. The extended long wavelength photoresponse is identified to originate from the electron-heavy hole (e1-hh1) and electron-light hole (e1-lh1) transitions in the InAsSbN MQW, with a cut off wavelength ~4.20 µm and peak detectivity D *  =  1.25  ×  109 cm Hz1/2 W-1.

  11. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Science.gov (United States)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S.; Balaji, M.; Asokan, K.; Baskar, K.

    2017-03-01

    The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 -1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 1011 and 5 × 1012 ions/cm2 compared to the pristine QW structures.

  12. Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

    KAUST Repository

    Mishra, Pawan

    2015-05-06

    We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.

  13. Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications (Conference Presentation)

    Science.gov (United States)

    Quach, Patrick; Jollivet, Arnaud; Isac, Nathalie; Bousseksou, Adel; Ariel, Frédéric; Tchernycheva, Maria; Julien, François H.; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hierro, Adrián.; Le Biavan, Nolwenn; Hugues, Maxime; Chauveau, Jean-Michel

    2017-03-01

    Quantum cascade (QC) lasers opens new prospects for powerful sources operating at THz frequencies. Up to now the best THz QC lasers are based on intersubband emission in GaAs/AlGaAs quantum well (QW) heterostructures. The maximum operating temperature is 200 K, which is too low for wide-spread applications. This is due to the rather low LO-phonon energy (36 meV) of GaAs-based materials. Indeed, thermal activation allows non-radiative path through electron-phonon interaction which destroys the population inversion. Wide band gap materials such as ZnO have been predicted to provide much higher operating temperatures because of the high value of their LO-phonon energy. However, despite some observations of intersubband absorption in c-plane ZnO/ZnMgO quantum wells, little is known on the fundamental parameters such as the conduction band offset in such heterostructures. In addition the internal field inherent to c-plane grown heterostuctures is an handicap for the design of QC lasers and detectors. In this talk, we will review a systematic investigation of ZnO/ZnMgO QW heterostructures with various Mg content and QW thicknesses grown by plasma molecular beam epitaxy on low-defect m-plane ZnO substrates. We will show that most samples exhibit TM-polarized intersubband absorption at room temperature linked either to bound-to-quasi bound inter-miniband absorption or to bound-to bound intersubband absorption depending on the Mg content of the barrier material. This systematic study allows for the first time to estimate the conduction band offset of ZnO/ZnMgO heterostructures, opening prospects for the design of QC devices operating at THz frequencies. This was supported by the European Union's Horizon 2020 research and innovation programme under grant agreement #665107.

  14. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

    OpenAIRE

    Taliercio, Thierry; Gallart, Mathieu; Lefebvre, Pierre; Morel, Aurélien; Gil, Bernard; Allègre, Jacques; Grandjean, Nicolas; Massies, Jean; Grzegory, Izabella; Porowsky, Sylvester

    2001-01-01

    International audience; We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

  15. Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wegele, Tatjana; Beyer, Andreas; Gies, Sebastian; Zimprich, Martin; Heimbrodt, Wolfram; Stolz, Wolfgang; Volz, Kerstin [Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, 35032 Marburg (Germany)

    2016-01-14

    Ga(NAsP) quantum wells grown pseudomorphically on Si substrate are promising candidates for optically active light sources in future optoelectronically integrated circuits on Si substrates. As the material is typically grown at low temperatures, it has to be thermally annealed after growth to remove defects and optimize optoelectronic properties. Here we show by quantitative transmission electron microscopy that two different kinds of structural development are associated with the annealing. First of all, the quantum well homogeneity improves with increasing annealing temperature. For annealing temperatures above 925 °C the composition becomes less homogeneous again. Second, voids form in the quantum well for annealing temperatures above 850 °C. Their density and size increase continuously with increasing annealing temperature. These results are correlated to the optical properties of the samples, where we find from temperature-dependent photoluminescence measurements two scales of disorder, which show the same temperature dependence as the structural properties.

  16. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing.

    Science.gov (United States)

    Makhloufi, Hajer; Boonpeng, Poonyasiri; Mazzucato, Simone; Nicolai, Julien; Arnoult, Alexandre; Hungria, Teresa; Lacoste, Guy; Gatel, Christophe; Ponchet, Anne; Carrère, Hélène; Marie, Xavier; Fontaine, Chantal

    2014-03-17

    We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.

  17. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

    2017-03-01

    Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

  18. Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1) B GaAs

    OpenAIRE

    Luna García de la Infanta, Esperanza; Trampert, Achim; Miguel-Sanchez, J.; Fernández González, Alvaro de Guzmán; Ploog, K.H.

    2008-01-01

    In this work, we present a detailed transmission electron microscopy analysis of the interfacial structure and composition uniformity of (Ga,In)(N,As) quantum wells grown by molecular beam epitaxy on vicinal GaAs(1 1 1)B substrates. Vertical composition fluctuations inside the (Ga,In)(N,As) quantum well are detected depending on the growth conditions, in particular the V/III flux ratio and the growth rate. This vertical composition fluctuation due to the phase separation tendency is in contra...

  19. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.

    Science.gov (United States)

    Song, Jie; Chang, Shih-Pang; Zhang, Cheng; Hsu, Ta-Cheng; Han, Jung

    2015-01-14

    We have demonstrated nitrogen-polar (0001̅) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.

  20. Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 μm on GaAs Grown by Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    WANG Hai-Li; I. Tang-ring; S. M. Wang; WU Dong-Hai; WU ning-peng; NI Hqiao-Qiao; HUANG She-Song; XIONG Yong-Hua; WANG Peng-Fei; HAN Qin; NIU Zhi-Chuan

    2009-01-01

    We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge waveguide laser, the lasing wavelength is centred at 1.508μm and the threshold current density is 667 A/cm2 under pulsed operation. The pulsed lasers can operate up to 286 K.

  1. Realization of sharp excitonic features in highly strained GaAs/In sub x Ga sub 1-x As multiple quantum wells grown on GaAs(100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li Chen; Rajkumar, K.C.; Madhukar, A.; Wei Chen; Guha, S.; Kaviani, K. (Photonic Materials and Devices Lab., Univ. of Southern California, Los Angeles, CA (USA))

    1991-05-01

    The relation between the exciton linewidth and the quantum well width is studied for various In compositions in InGaAs/GaAs quantum wells. A region of minimum exciton linewidth is observed. Thick multiple quantum wells, grwon in this minimum linewidth region, show sharp excitonic features when grown under RHEED determined optimized growth conditions. Ultrathick strained multiple quantum wells with good optical quality are realized by exploiting strain relief via growth on pre-patterned substrates. (orig.).

  2. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

    Science.gov (United States)

    Gautier, S.; Aggerstam, T.; Pinos, A.; Marcinkevičius, S.; Liu, K.; Shur, M.; O'Malley, S. M.; Sirenko, A. A.; Djebbour, Z.; Migan-Dubois, A.; Moudakir, T.; Ougazzaden, A.

    2008-11-01

    Al xGa 1-xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

  3. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100 and (311B GaAs Substrates

    Directory of Open Access Journals (Sweden)

    Shafi M

    2010-01-01

    Full Text Available Abstract Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100 and (311B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100 plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region to 4.7 × 106 V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311B plane. The Ec-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at Ec-0.24 eV is 0.39 eV.

  4. Optical Properties and Carrier Dynamics of GaAs/GaInAs Multiple-Quantum-Well Shell Grown on GaAs Nanowire by Molecular Beam Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kwangwook; Ravindran, Sooraj; Ju, Gun Wu; Min, Jung-Wook; Kang, Seokjin; Myoung, NoSoung; Yim, Sang-Youp; Jo, Yong-Ryun; Kim, Bong-Joong; Lee, Yong Tak

    2016-12-01

    GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

  5. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy

    KAUST Repository

    Browne, David A.

    2015-05-14

    © 2015 AIP Publishing LLC. Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

  6. Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

    Science.gov (United States)

    Aleshkin, V. Ya.; Baidus, N. V.; Dubinov, A. A.; Fefelov, A. G.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Nekorkin, S. M.; Novikov, A. V.; Pavlov, D. A.; Samartsev, I. V.; Skorokhodov, E. V.; Shaleev, M. V.; Sushkov, A. A.; Yablonskiy, A. N.; Yunin, P. A.; Yurasov, D. V.

    2016-08-01

    We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

  7. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  8. Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets

    Science.gov (United States)

    Cho, Chu-young; Park, Il-Kyu; Kwon, Min-Ki; Kim, Ja-Yeon; Park, Seong-Ju; Jung, Dong Ryul; Kwon, Kwang Woo

    2008-08-01

    We demonstrate phosphor-free light-emitting diode (LED) by growing InGaN/GaN multiple quantum wells (MQWs) on the n-GaN microfacets. The white emission was realized by combining emissions from InGaN/GaN MQWs grown on cplane (0001), semipolar {11-22} and {1-101} facets which are selectively grown on n-GaN with trapezoidal shape arrays. The photoluminescence (PL) and electroluminescence (EL) measurement revealed that the long wavelength light was emitted from InGaN/GaN MQWs grown on c-plane (0001), while the short wavelength light was emitted from that of semipolar microfacets. The change in the emission wavelengths from each microfacets was due to the difference in the well thickness and In composition of each MQWs. The LED showed white emission at an injection current between 180 and 230 mA. These results suggested that white emission is possible without using the phosphor by combining emission lights emitted from microfacets.

  9. Controlling the morphology of GaN layers grown on AlN in Ga self-surfactant conditions: from quantum wells to quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Adelmann, C.; Daudin, B.; Monroy, E.; Sarigiannidou, E.; Rouviere, J.L.; Hori, Y.; Brault, J.; Gogneau, N. [Departement de Recherche Fondamentale sur la Matiere Condensee, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9 (France); Fanget, S.; Bru-Chevallier, C. [Laboratoire de Physique de la Matiere - CNRS (UMR5511), INSA de Lyon, Batiment Blaise Pascal, 7 avenue Jean Capelle, 69621 Villeurbanne Cedex (France)

    2002-12-01

    We show that the growth mode of GaN deposited by plasma-assisted molecular beam epitaxy on AlN can be controlled by tuning Ga/N ratio. This enables to grow either quantum dots (Ga/N<1) or quantum wells (Ga/N>>1). The inhibition of 2D/3D transition results from a decrease in effective mismatch induced by the presence of a continuous Ga film on growing GaN surface in Ga-rich conditions. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  10. Effects of Rapid Thermal Annealing on Optical Properties of GaInNAs/GaAs Single Quantum Well Grown by Plasma-Assisted Molecular Beam Epitaxy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma-assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved.RTA was carried out at 650℃ and its effect was studied by the comparising the roomtemperature PhotoLuminescence (PL) spectra for the non ion-removed (grown without magnets) sample with for the ion-removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion-removed GaInNAs/GaAs SQW after annealing (compared with those for ion-removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ionremoved GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion-removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect-assisted In-Ga interdiffusion rather than defect-assisted N-As interdiffusion.

  11. Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum

    Science.gov (United States)

    Reum Lee, Ah; Jeon, Hunsoo; Lee, Gang-Seok; Ok, Jin-Eun; Jo, Dong-Wan; Kim, Kyoung Hwa; Yi, Sam Nyung; Yang, Min; Ahn, Hyung Soo; Cho, Chae-Ryong; Kim, Suok-Whan; Lee, Jae-Hak; Ha, Hong-Ju

    2011-01-01

    We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. The SAG patterns were designed to be circular and their diameters were 700 and 200 µm. After the growth, the InGaN/GaN MQW LED of 200 µm diameter had various crystal facets and a shape similar to volcanic craters, which were not observed in the 700-µm-diameter sample. We obtained an active layer with compositional nonuniformity and superior optical properties. We found wide electroluminescence (EL) spectral peaks near 470, 570, and 600 nm. The distribution of the EL spectrum of the sample was similar to that of a conventional phosphor-converted white LED.

  12. Quantum well lasers

    CERN Document Server

    Zory, Jr, Peter S; Kelley, Paul

    1993-01-01

    This book provides the information necessary for the reader to achieve a thorough understanding of all aspects of QW lasers - from the basic mechanism of optical gain, through the current technolgoical state of the art, to the future technologies of quantum wires and quantum dots. In view of the growing importance of QW lasers, this book should be read by all those with an active interest in laser science and technology, from the advanced student to the experienced laser scientist.* The first comprehensive book-length treatment of quantum well lasers* Provides a detailed treatment

  13. Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum wells grown by gas source molecular beam epitaxy

    Science.gov (United States)

    Pan, Wenwu; Zhang, Liyao; Zhu, Liang; Song, Yuxin; Li, Yaoyao; Wang, Chang; Wang, Peng; Wu, Xiaoyan; Zhang, Fan; Shao, Jun; Wang, Shumin

    2017-01-01

    In x Ga1-x As/GaAs1-y Bi y /In x Ga1-x As (0.20 ≤ x ≤ 0.22, 0.035 ≤ y ≤ 0.045) quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type-II band edge line-up. Both type-I and type-II transitions were observed in the Bi containing W QWs and the photoluminescence intensity was enhanced in the sample with a high Bi content, which is mainly due to the improvement of carrier confinement. The 8 band k · p model was used to analyze the electronic properties in the QWs and the calculated transition energies fit well with the experiment results. Our study shows that the proposed type-II QW is a promising candidate for realizing GaAs-based near infrared light emitting devices near 1.3 μm.

  14. Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy

    Science.gov (United States)

    Pan, Wenwu; Zhang, Liyao; Zhu, Liang; Li, Yaoyao; Chen, Xiren; Wu, Xiaoyan; Zhang, Fan; Shao, Jun; Wang, Shumin

    2016-09-01

    Photoluminescence (PL) properties of In0.2Ga0.8As/GaAs0.96Bi0.04/In0.2Ga0.8As quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. The type-II transition energy shifts from 1.149 eV to 1.192 eV when increasing the excitation power from 10 mW to 150 mW at 4.5 K, which was ascribed to the band-bending effect. On the other hand, the type-II PL quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. An 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-II QW. The calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 meV and 50 meV, respectively, are deduced.

  15. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current–voltage (I–V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm‑2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  16. Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

    2011-06-15

    This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

  17. Photocurrent and Photoluminescence Investigations of GaInNAs and GaInNAs(Sb Quantum Wells Grown by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    S. B. Bouzid

    2005-01-01

    Full Text Available We have investigated photocurrent (PC and photoluminescence (PL in sequentially grown GaInNAs/GaAs and GaInNAs(Sb/GaAsSbN quantum wells. Photocurrent transitions are analyzed by theoretical calculations using envelope function formalism taking into account the strain effect and the strong coupling between nitrogen localized state and the GaInAs band gap. The results are consistent with a type I band alignment and a conduction band offset ratio of about 80 %. Additionally, our results suggest an increase of the electron effective mass by as much as 0.035 m0 resulting from the flattening of the conduction band under nitrogen effect. The temperature evolution of the PL peak energy and the integrated PL intensity of GaInNAsSb QW show evidence of strong localization of carriers. Both, the high delocalization temperature, in the 230 K range and the strong shift between the PC and PL spectra of GaInNAsSb QW, indicate the presence of deeper localized states as compared to that in the GaInNAs QW.

  18. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Chan, C.H. [Department of Information Management, St. John' s University, Tamsui, Taipei 251, Taiwan (China); Wu, J.D. [Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Keelung Road, Section 4, Taipei 106, Taiwan (China); Huang, Y.S., E-mail: ysh@mail.ntust.edu.tw [Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Keelung Road, Section 4, Taipei 106, Taiwan (China); Hsu, H.P. [Department of Electronic Engineering, Ming Chi University of Technology, Taishan, Taipei 243, Taiwan (China); Tiong, K.K. [Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan (China); Su, Y.K. [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2010-12-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In{sub x}Ga{sub 1-x}As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 {<=} x {<=} 0.44) in the temperature range of 20 K {<=} T {<=} 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  19. Modeling Quantum Well Lasers

    Directory of Open Access Journals (Sweden)

    Dan Alexandru Anghel

    2012-01-01

    Full Text Available In semiconductor laser modeling, a good mathematical model gives near-reality results. Three methods of modeling solutions from the rate equations are presented and analyzed. A method based on the rate equations modeled in Simulink to describe quantum well lasers was presented. For different signal types like step function, saw tooth and sinus used as input, a good response of the used equations is obtained. Circuit model resulting from one of the rate equations models is presented and simulated in SPICE. Results show a good modeling behavior. Numerical simulation in MathCad gives satisfactory results for the study of the transitory and dynamic operation at small level of the injection current. The obtained numerical results show the specific limits of each model, according to theoretical analysis. Based on these results, software can be built that integrates circuit simulation and other modeling methods for quantum well lasers to have a tool that model and analysis these devices from all points of view.

  20. Quantum well nonlinear microcavities

    Science.gov (United States)

    Oudar, J. L.; Kuszelewicz, R.; Sfez, B.; Pellat, D.; Azoulay, R.

    We report on recent progress in reducing the power threshold of all-optical bistable quantum well vertical microcavities. Significant improvements are achieved through an increase of the cavity finesse, together with a reduction of the device active layer thickness. A critical intensity of 5 μW/μm 2 has been observed on a microcavity of finesse 250, with a nonlinear medium of only 18 GaAs quantum wells of 10 nm thickness. Further improvements of the Bragg mirror quality resulted in a finesse of 700 and a power-lifetime product of 15 fJ/μm 2. Microresonator pixellation allows to obtain 2-dimensional arrays. A thermally-induced alloy-mixing technique is described, which produced a 110 meV carrier confinement energy, together with a refractive index change of -.012, averaged over the 2.6 μm nonlinear medium thickness. The resulting electrical and optical confinement is shown to improve the nonlinear characteristics, by limiting lateral carrier diffusion and light diffraction.

  1. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

    Energy Technology Data Exchange (ETDEWEB)

    Wheatley, R.; Kesaria, M., E-mail: m.kesaria@lancaster.ac.uk; Marshall, A.; Zhuang, Q. D.; Krier, A. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Mawst, L. J.; Kirch, J. D. [Department of Electrical and Computer Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States); Kuech, T. F. [Department of Chemical and Biological Engineering, University of Wisconsin, 1415 Engineering Drive, Madison, Wisconsin 53706 (United States)

    2015-06-08

    Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs{sub 1−x}N{sub x} and In{sub 1−y}Ga{sub y}As{sub 1−x}N{sub x} type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

  2. Excitons in asymmetric quantum wells

    Science.gov (United States)

    Grigoryev, P. S.; Kurdyubov, A. S.; Kuznetsova, M. S.; Ignatiev, I. V.; Efimov, Yu. P.; Eliseev, S. A.; Petrov, V. V.; Lovtcius, V. A.; Shapochkin, P. Yu.

    2016-09-01

    Resonance dielectric response of excitons is studied for the high-quality InGaAs/GaAs heterostructures with wide asymmetric quantum wells (QWs). To highlight effects of the QW asymmetry, we have grown and studied several heterostructures with nominally square QWs as well as with triangle-like QWs. Several quantum confined exciton states are experimentally observed as narrow exciton resonances. A standard approach for the phenomenological analysis of the profiles is generalized by introducing different phase shifts for the light waves reflected from the QWs at different exciton resonances. Good agreement of the phenomenological fit to the experimentally observed exciton spectra for high-quality structures allowed us to reliably obtain parameters of the exciton resonances: the exciton transition energies, the radiative broadenings, and the phase shifts. A direct numerical solution of the Schrödinger equation for the heavy-hole excitons in asymmetric QWs is used for microscopic modeling of the exciton resonances. Remarkable agreement with the experiment is achieved when the effect of indium segregation is taken into account. The segregation results in a modification of the potential profile, in particular, in an asymmetry of the nominally square QWs.

  3. Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls

    Energy Technology Data Exchange (ETDEWEB)

    Mancini, L.; Lefebvre, W.; Houard, J.; Blum, I.; Vurpillot, F.; Rigutti, L., E-mail: lorenzo.rigutti@univ-rouen.fr [Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray (France); Hernández-Maldonado, D. [Groupe de Physique des Matériaux, UMR CNRS 6634, Normandie University, INSA and University of Rouen, 76800 St Etienne du Rouvray (France); SuperSTEM STFC Daresbury Laboratories, Warrington WA4 4AD (United Kingdom); Eymery, J.; Durand, C. [CEA, CNRS, Université Grenoble Alpes, 38000 Grenoble (France); Tchernycheva, M. [Institut d' Electronique Fondamentale, UMR CNRS 8622, University Paris Saclay, 91405 Orsay (France)

    2016-01-25

    The optical properties of m-plane InGaN/GaN quantum wells grown on microwire sidewalls were investigated carrying out a correlative scanning transmission electron microscopy (STEM), atom probe tomography (APT), and micro-photoluminescence study applied on single nanoscale field-emission tips obtained by a focused ion beam annular milling. Instead of assuming simple rectangular composition profiles, yielding misleading predictions for the optical transition energies, we can thus take into account actual compositional distributions and the presence of stacking faults (SFs). SFs were shown to be responsible for a lowering of the recombination energies of the order of 0.1 eV with respect to those expected for defect-free quantum wells (QWs). Such energy reduction allows establishing a good correspondence between the transition energies observed by optical spectroscopy and those calculated on the basis of the QWs In measured composition and distribution assessed by STEM structural analysis and APT chemical mapping.

  4. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université de Montpellier, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean [CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, 06560 Valbonne (France); Bigenwald, Pierre [Institut Pascal, Campus des Cézeaux, 24 avenue des Landais, 63171 Aubière Cedex (France)

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  5. Very high dose electron irradiation effects on photoluminescence from GaInNAs/GaAs quantum wells grown by molecular beam epitaxy

    Science.gov (United States)

    Pavelescu, E.-M.; Bălţăţeanu, N.; Spânulescu, S. I.; Arola, E.

    2017-02-01

    The effects of 7 MeV electron irradiation at very high doses of 2 ×1017 and 1.5 ×1018electrons /cm2 and subsequent rapid thermal annealing on photoluminescence from a strain-compensated GaInAsN/GaAsN/GaAs quantum well structure are investigated. A large additional blueshift of photoluminescence has been observed from the lower-dose irradiated sample as compared to the non-irradiated one when annealed after the irradiation. This additional blueshift will become considerably reduced by an ageing effect, which occurs already at room temperature. The mechanism causing the additional blueshift of photoluminescence and its reduction is qualitatively assigned to metastable complex defects promoted by electron irradiation in the nitrogen containing layers. No such additional blueshift of photoluminescence under the thermal treatment has been observed in the higher-dose irradiated sample.

  6. Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Oscar; Jimenez, Juan [GdS-Optronlab, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Avella, Manuel [GdS-Optronlab, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Parque Cientifico, Edificio I+D, Univ. de Valladolid, Paseo de Belen 1, 47011 Valladolid (Spain); Bosi, Matteo [IMEM-CNR Institute, Area delle Scienze 37/A, 43124 Fontanini, Parma (Italy); Fornari, Roberto [Institute for Crystal Growth (IKZ), Max Born Str. 2, 12489 Berlin (Germany)

    2010-01-15

    The luminescence emission of InGaN/GaN multi-quantum wells (MQW) is affected by several factors, i.e. the composition, the QW thickness, the piezoelectric field and the high density of threading dislocations. In the case of heterostructures containing several QWs piled up, one has to consider the homogeneity of each QW and the thickness of the barrier layers between them, which have influence on the strain. We present herein a cathodoluminescence (CL) study of a series of InGaN QW structures, paying special emphasis to the problem of the lateral distribution of In, and how it influences the emission properties of the QWs. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  8. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  9. Recombination Dynamics in Quantum Well Semiconductor Structures

    Science.gov (United States)

    Fouquet, Julie Elizabeth

    Time-resolved and time-integrated photoluminescence as a function of excitation energy density have been observed in order to study recombination dynamics in GaAs/Al(,x)Ga(,1 -x)As quantum well structures. The study of room temperature photoluminescence from the molecular beam epitaxy (MBE) -grown multiple quantum well structure and photoluminescence peak energy as a function of tem- perature shows that room temperature recombination at excitation densities above the low 10('16) cm('-3) level is due to free carriers, not excitons. This is the first study of time-resolved photoluminescence of impurities in quantum wells; data taken at different emission wave- lengths at low temperatures shows that the impurity-related states at photon energies lower than the free exciton peaks luminesce much more slowly than the free exciton states. Results from a similar structure grown by metal -organic chemical vapor deposition (MOCVD) are explained by saturation of traps. An unusual increase in decay rate observed tens of nanoseconds after excitation is probably due to carriers falling out of the trap states. Since this is the first study of time-resolved photoluminescence of MOCVD-grown quantum well structures, this unusual behavior may be realted to the MOCVD growth process. Further investigations indi- cate that the traps are not active at low temperatures; they become active at approximately 150 K. The traps are probably associated with the (hetero)interfaces rather than the bulk Al(,x)Ga(,1-x)As material. The 34 K photoluminescence spectrum of this sample revealed a peak shifted down by approximately 36 meV from the main peak. Time-resolved and time-integrated photoluminescence results here show that this peak is not a stimulated phonon emission sideband, but rather is an due to an acceptor impurity, probably carbon. Photo- luminescence for excitation above and below the barrier bandgap shows that carriers are efficiently collected in the wells in both single and multiple

  10. Quantum-Well Thermophotovoltaic Cells

    Science.gov (United States)

    Freudlich, Alex; Ignatiev, Alex

    2009-01-01

    Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.

  11. Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

    Institute of Scientific and Technical Information of China (English)

    李忠辉; 杨志坚; 秦志新; 童玉珍; 于彤军; 陆曙; 杨华; 张国义

    2003-01-01

    The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20mA injection current at room temperature. With increasing forward current from 10mA to 50mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.

  12. Formation of I2-type basal-plane stacking faults in In0.25Ga0.75N multiple quantum wells grown on a ( 10 1 ¯ ) semipolar GaN template

    Science.gov (United States)

    Li, Yueliang; Qi, Haoyuan; Meisch, Tobias; Hocker, Matthias; Thonke, Klaus; Scholz, Ferdinand; Kaiser, Ute

    2017-01-01

    In this work, I2-type basal-plane stacking faults (BSFs) were observed in In0.25Ga0.75N multiple quantum wells (MQWs) grown on a ( 10 1 ¯1 ) semipolar GaN template by high-resolution transmission electron microscopy. The structure and formation mechanisms of the I2-type BSFs at the GaN-InGaN interface were investigated in detail. The formation of the I2-type BSFs contributes to lattice mismatch accommodation within the InGaN QWs. Their density varies in different regions of the sample due to the inhomogeneous distribution of the In content in the InGaN layer. The relationship between the In content in the InxGa1-xN layer and the I2-type BSFs is discussed.

  13. Performance enhancement of blue light-emitting diodes with InGaN/GaN multi-quantum wells grown on Si substrates by inserting thin AlGaN interlayers

    Science.gov (United States)

    Kimura, Shigeya; Yoshida, Hisashi; Uesugi, Kenjiro; Ito, Toshihide; Okada, Aoi; Nunoue, Shinya

    2016-09-01

    We have grown blue light-emitting diodes (LEDs) having InGaN/GaN multi-quantum wells (MQWs) with thin AlyGa1-yN (0 transmission electron microscopy observations and three-dimensional atom probe analysis that 1-nm-thick interlayers with an AlN mole fraction of less than y = 0.3 were continuously formed between GaN barriers and InGaN wells, and that the AlN mole fraction up to y = 0.15 could be consistently controlled. The external quantum efficiency of the blue LED was enhanced in the low-current-density region (≤45 A/cm2) but reduced in the high-current-density region by the insertion of the thin Al0.15Ga0.85N interlayers in the MQWs. We also found that reductions in both forward voltage and wavelength shift with current were achieved by inserting the interlayers even though the inserted AlGaN layers had potential higher than that of the GaN barriers. The obtained peak wall-plug efficiency was 83% at room temperature. We suggest that the enhanced electroluminescence (EL) performance was caused by the introduction of polarization-induced hole carriers in the InGaN wells on the side adjacent to the thin AlGaN/InGaN interface and efficient electron carrier transport through multiple wells. This model is supported by temperature-dependent EL properties and band-diagram simulations. We also found that inserting the interlayers brought about a reduction in the Shockley-Read-Hall nonradiative recombination component, corresponding to the shrinkage of V-defects. This is another conceivable reason for the observed performance enhancement.

  14. A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

    Energy Technology Data Exchange (ETDEWEB)

    Davies, M. J., E-mail: Matthew.Davies-2@Manchester.ac.uk; Hammersley, S.; Dawson, P. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Massabuau, F. C.-P.; Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2016-02-07

    In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with non-radiative recombination processes.

  15. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  16. Quantum Wells in Photovoltaic Cells

    CERN Document Server

    Rohr, C; Ballard, I M; Bushnell, D B; Connolly, J P; Daukes, N J Ekins-; Barnham, K W J

    2016-01-01

    The fundamental efficiency limit of a single bandgap solar cell is about 31% at one sun with a bandgap of about Eg = 1.35 eV (1), determined by the trade-off of maximising current with a smaller bandgap and voltage with a larger bandgap. Multiple bandgaps can be introduced to absorb the broad solar spectrum more efficiently. This can be realised in multi- junction cells, for example, where two or more cells are stacked on top of each other either mechanically or monolithically connected by a tunnel junction. An alternative or complementary (see section 1.4) approach is the quantum well cell (QWC).

  17. Phonons in Quantum-Dot Quantum Well

    Institute of Scientific and Technical Information of China (English)

    QINGuo-Yi

    2004-01-01

    Phonon modes of A1As/GaAs/A1As and GaAs/A1As/metal Pb quantum-dot quantum wells (QDQW's) with the whole scale up to 90 AО are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AlAs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (Г)-like modes of QDQW's that have maximum bulk GaAs-LO (Г) parentages in all modes covering thewhole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting thestructure parameters. In A1As/GaAs/A1As, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/A1As/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model The frequency spectra in both GaAs-like andAlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 AО Defects at metal/A1As interface have significant influence to AlAs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.

  18. Phonons in Quantum-Dot Quantum Well

    Institute of Scientific and Technical Information of China (English)

    QIN Guo-Yi

    2004-01-01

    Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW's)with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AMs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (F)-like modes of QDQW's that have maximum bulk GaAs-LO (F) parentages in all modes covering the whole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting the structure parameters. In AlAs/GaAs/AlAs, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/AMs/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model. The frequency spectra in both GaAs-like and AlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A. Defects at metal/AlAs interface have significant influence to AMs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.

  19. Silicon Germanium Quantum Well Solar Cell Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum-well structures embodied on single crystal silicon germanium drastically enhanced carrier mobilities.  The cell-to-cell circuits of quantum-well PV...

  20. Ultra Thin Quantum Well Materials

    Energy Technology Data Exchange (ETDEWEB)

    Dr Saeid Ghamaty

    2012-08-16

    This project has enabled Hi-Z technology Inc. (Hi-Z) to understand how to improve the thermoelectric properties of Si/SiGe Quantum Well Thermoelectric Materials. The research that was completed under this project has enabled Hi-Z Technology, Inc. (Hi-Z) to satisfy the project goal to understand how to improve thermoelectric conversion efficiency and reduce costs by fabricating ultra thin Si/SiGe quantum well (QW) materials and measuring their properties. In addition, Hi-Z gained critical new understanding on how thin film fabrication increases the silicon substrate's electrical conductivity, which is important new knowledge to develop critical material fabrication parameters. QW materials are constructed with alternate layers of an electrical conductor, SiGe and an electrical insulator, Si. Film thicknesses were varied, ranging from 2nm to 10nm where 10 nm was the original film thickness prior to this work. The optimum performance was determined at a Si and SiGe thickness of 4nm for an electrical current and heat flow parallel to the films, which was an important conclusion of this work. Essential new information was obtained on how the Si substrate electrical conductivity increases by up to an order of magnitude upon deposition of QW films. Test measurements and calculations are accurate and include both the quantum well and the substrate. The large increase in substrate electrical conductivity means that a larger portion of the electrical current passes through the substrate. The silicon substrate's increased electrical conductivity is due to inherent impurities and thermal donors which are activated during both molecular beam epitaxy and sputtering deposition of QW materials. Hi-Z's forward looking cost estimations based on future high performance QW modules, in which the best Seebeck coefficient and electrical resistivity are taken from separate samples predict that the electricity cost produced with a QW module could be achieved at <$0.35/W

  1. Quantum wells for high-efficiency photovoltaics

    Science.gov (United States)

    Alonso-Álvarez, Diego; Ekins-Daukes, Nicholas

    2016-03-01

    Over the last couple of decades, there has been an intense research on strain balanced semiconductor quantum wells (QW) to increase the efficiency of multi-junction solar (MJ) solar cells grown monolithically on germanium. So far, the most successful application of QWs have required just to tailor a few tens of nanometers the absorption edge of a given subcell in order to reach the optimum spectral position. However, the demand for higher efficiency devices requiring 3, 4 or more junctions, represents a major difference in the challenges QWs must face: tailoring the absorption edge of a host material is not enough, but a complete new device, absorbing light in a different spectral region, must be designed. Among the most important issues to solve is the need for an optically thick structure to absorb enough light while keeping excellent carrier extraction using highly strained materials. Improvement of the growth techniques, smarter device designs - involving superlattices and shifted QWs, for example - or the use of quantum wires rather than QWs, have proven to be very effective steps towards high efficient MJ solar cells based on nanostructures in the last couple of years. But more is to be done to reach the target performances. This work discusses all these challenges, the limitations they represent and the different approaches that are being used to overcome them.

  2. Spin photocurrents in quantum wells

    CERN Document Server

    Ganichev, S D

    2003-01-01

    Spin photocurrents generated by homogeneous optical excitation with circularly polarized radiation in quantum wells (QWs) are reviewed. The absorption of circularly polarized light results in optical spin orientation due to the transfer of the angular momentum of photons to electrons of a two-dimensional electron gas. It is shown that in QWs belonging to one of the gyrotropic crystal classes a non-equilibrium spin polarization of uniformly distributed electrons causes a directed motion of electrons in the plane of the QW. A characteristic feature of this electric current, which occurs in unbiased samples, is that it reverses its direction upon changing the radiation helicity from left-handed to right-handed and vice versa. Two microscopic mechanisms are responsible for the occurrence of an electric current linked to a uniform spin polarization in a QW: the spin polarization-induced circular photogalvanic effect and the spin-galvanic effect. In both effects the current flow is driven by an asymmetric distribut...

  3. Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Anufriev, Roman; Chauvin, Nicolas; Bru-Chevallier, Catherine [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, Villeurbanne (France); Khmissi, Hammadi [Universite de Monastir, Laboratoire de Micro-Optoelectronique et Nanostructures (LMON), Faculte des Sciences, Monastir (Tunisia); Naji, Khalid; Gendry, Michel [Universite de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, Ecully (France); Patriarche, Gilles [Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, Marcoussis (France)

    2013-10-15

    Photoluminescence (PL) quantum efficiency (QE) is experimentally investigated, using an integrating sphere, as a function of excitation power on both InAs/InP quantum rod nanowires (QRod-NWs) and radial quantum well nanowires (QWell-NWs) grown on silicon substrates. The measured values of the QE are compared with those of the planar analogues such as quantum dash and quantum well samples, and found to be comparable for the quantum well structures at relatively low power density. Further studies reveal that the values of QE of the QRod-NWs and QWell-NWs are limited by the low quality of the InP NW structure and the quality of radial quantum well, respectively. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

    Institute of Scientific and Technical Information of China (English)

    Chen Xin; Zhao Bi-Jun; Ren Zhi-Wei; Tong Jin-Hui; Wang Xing-Fu; Zhuo Xiang-Jing; Zhang Jun

    2013-01-01

    InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition.The stepped-thickness quantum wells structure,in which the well thickness becomes smaller and smaller along the growth direction,reveals better crystalline quality and better spectral overlap with the solar spectrum.Consequently,the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2).In addition,approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

  5. Current-Enhanced Quantum Well Solar Cells

    Institute of Scientific and Technical Information of China (English)

    LOU Chao-Gang; SUN Qiang; XU Jun; ZHANG Xiao-Bing; LEI Wei; WANG Bao-Ping; CHEN Wen-Jun; QIAO Zai-Xiang

    2006-01-01

    We present the experimental results that demonstrate the enhancement of the short-circuit current of quantum well solar cells. The spectral response shows that the introduction of quantum wells extends the absorption spectrum of solar cells. The current densities under different truncated spectrums significantly increase, showing that quantum well solar cells are suitable to be the middle cells of GaInP/GaAs/Ge triple-junction solar cells to increase their overall conversion efficiency.

  6. Pyroelectric Quantum Well Energy Harvesters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the investigation of pyroelectric energy harvesters with enhanced efficiencies through quantum wells induced by a multilayer design.  Pyroelectric...

  7. GaSbBi/GaSb quantum well laser diodes

    Science.gov (United States)

    Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

    2017-05-01

    We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

  8. A Polaron in a Quantum Dot Quantum Well

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li; XIE HongJing; CHEN ChuanYu

    2002-01-01

    The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.

  9. Voltage controlled terahertz transmission through GaN quantum wells

    OpenAIRE

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, JP; Beaumont, B.; P. Shiktorov; Starikov, E.; Gruzinskis, V.; Korotyevyev, V.

    2011-01-01

    We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement ...

  10. Magnetoluminescence characterization of quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Jones, E.D.; Kurtz, S.R.

    1995-03-01

    Three applications of magnetic field effects upon the photoluminescence spectrum which provide unique information about semiconductor quantum well structures are presented. The first example shows data which provide a quantitative measure of both the conduction and valence-band the energy dispersion curves for an InGaAs/GaAs single-strained-quantum well and a GaAs/AlGaAs lattice-matched single quantum well. The second subject discusses magnetoluminescence data which provides a clear demonstration for the existence of spectral shifts related to ionized-impurity scattering and the third study involves infrared magnetoluminescence measurements on narrow bandgap semiconductor alloys and heterostructures.

  11. Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

    OpenAIRE

    Malins, David B

    2007-01-01

    The quantum confined Stark effect (QCSE) and ultrafast absorption dynamics near the bandedge have been investigated in p-i-n waveguides comprising quantum confined heterostructures grown on GaAs substrates, for emission at 1.3um. The materials are; isolated InAs/InGaAs dot-in-a-well (DWELL) quantum dots (QD), bilayer InAs quantum dots and GaInNAs multiple quantum wells (MQW). The focus was to investigate these dynamics in a planar waveguide geometry, for the purpose of large scale integ...

  12. Resonant Optical Absorption in Semiconductor Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    YU Li-Yuan; CAO Jun-Cheng

    2004-01-01

    @@ We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.

  13. Wave-packet dynamics in quantum wells

    DEFF Research Database (Denmark)

    Kuznetsov, A. V.; Sanders, G. D.; Stanton, C. J.

    1995-01-01

    It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems, this polari......It has been recently recognized that in bulk semiconductors the displacement current caused by ultrafast optical generation of ''polarized pairs'' in the applied de field is an important mechanism of charge transport in addition to the usual transport current. In quantum-well systems......, this polarized pair creation is thought to be the only source of photocurrent at the early stages of photoexcitation since the bulk like transport current is inhibited by the barriers. In this work we perform a full quantum-mechanical analysis of ultrafast optical excitation in a de-biased quantum well. We take...... larger than the well width (for long pulses and/or narrow wells), we recover the polarized pairs behavior of the photocurrent. For shorter pulses, when the coherence length becomes comparable to the well width, the photocurrent exhibits quantum beats. Finally, for very short pulses (around 10 fs) we find...

  14. Anisotropic Spin Splitting in Step Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    HAO Ya-Fei; CHEN Yong-Hai; HAO Guo-Dong; WANG Zhan-Guo

    2009-01-01

    By the method of finite difference,the anisotropic spin splitting of the Alx Ga1-x As/GaAs/Aly Ga1-y As/Alx Ga1-x As step quantum wells (QWs) are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field.We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field.The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin.The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.

  15. Quantum Well Infrared Photodetectors Physics and Applications

    CERN Document Server

    Schneider, Harald

    2007-01-01

    Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

  16. Photonic crystal slab quantum well infrared photodetector

    Science.gov (United States)

    Kalchmair, S.; Detz, H.; Cole, G. D.; Andrews, A. M.; Klang, P.; Nobile, M.; Gansch, R.; Ostermaier, C.; Schrenk, W.; Strasser, G.

    2011-01-01

    In this letter we present a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS). With the PCS it is possible to enhance the absorption efficiency by increasing photon lifetime in the detector active region. To understand the optical properties of the device we simulate the PCS photonic band structure, which differs significantly from a real two-dimensional photonic crystal. By fabricating a PCS-QWIP with 100x less quantum well doping, compared to a standard QWIP, we are able to see strong absorption enhancement and sharp resonance peaks up to temperatures of 170 K.

  17. Development of high power quantum well lasers at RRCAT

    CERN Document Server

    Sharma, T K; Dixit, V K; Singh, S D; Pal, S; Porwal, S; Kumar, Ravi; Khakha, Alexander; Jangir, R; Kheraj, V; Rawat, P; Nath, A K

    2014-01-01

    We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and doping values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider bandgap waveguide and cladding layers. The complete laser structure is grown by metal organic vapour phase epitaxy technique and devices are fabricated through standard procedure using photolithography. We recently achieved about 5.3 Watt peak power at 853 nm. These laser diodes were tested under pulsed operation at room temperature for 500 nanosecond pulse duration with a duty cycle of 1:1000. Laser diode arrays consisting of 6-10 elements were also developed and tested for operation in pulsed mode at room temperature.

  18. Mixed biexcitons in single quantum wells

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

    1999-01-01

    Biexcitonic complexes in a ZnSe single quantum well are investigated by spectrally resolved four-wave mixing (FWM). The formation of heavy-heavy-hole XXh and of mixed heavy-light-hole XXm biexcitons showing binding energies of Delta(h) = 4.8 meV and Delta(m)= 2.8 meV is identified by polarization...

  19. Spectroscopy of GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    West, L.C.

    1985-07-01

    A new type of optical dipole transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction band electron wavefunction, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption in three different samples with quantum well thicknesses 65, 82, and 92 A and resonant energies of 152, 121, and 108 MeV, respectively. The oscillator strength is found to have values of over 12, in good agreement with prediction. The linewidths are seen as narrow as 10 MeV at room temperature and 7 MeV at low temperature, thus proving a narrow line resonance can indeed occur between transitions of free electrons. Techniques for the proper growth of these quantum well samples to enable observation of the QWEST have also been found using (AlGa)As compounds. This QWEST is considered to be an ideal material for an all optical digital computer. The QWEST can be made frequency matched to the inexpensive Carbon Dioxide laser with an infrared wavelength of 10 microns. The nonlinearity and fast relaxation time of the QWEST indicate a logic element with a subpicosecond switch time can be built in the near future, with a power level which will eventually be limited only by the noise from a lack of quanta to above approximately 10 microwatts. 64 refs., 35 figs., 6 tabs.

  20. Strained quantum well photovoltaic energy converter

    Science.gov (United States)

    Freundlich, Alexandre (Inventor); Renaud, Philippe (Inventor); Vilela, Mauro Francisco (Inventor); Bensaoula, Abdelhak (Inventor)

    1998-01-01

    An indium phosphide photovoltaic cell is provided where one or more quantum wells are introduced between the conventional p-conductivity and n-conductivity indium phosphide layer. The approach allows the cell to convert the light over a wider range of wavelengths than a conventional single junction cell and in particular convert efficiently transparency losses of the indium phosphide conventional cell. The approach hence may be used to increase the cell current output. A method of fabrication of photovoltaic devices is provided where ternary InAsP and InGaAs alloys are used as well material in the quantum well region and results in an increase of the cell current output.

  1. Entangled States and the Gravitational Quantum Well

    CERN Document Server

    Alves, Rui; Bertolami, Orfeu

    2016-01-01

    We study the continuous variable entanglement of a system of two particles under the influence of Earth's gravitational field. We determine a phase-space description of this bipartite system by calculating its Wigner function and verify its entanglement by applying a generalization of the PPT criterion for non-Gaussian states. We also examine the influence of gravity on an idealized entanglement protocol to be shared between stations at different potentials based on the correlation of states of the gravitational quantum well.

  2. Photoemission of switchable mirrors and quantum wells

    OpenAIRE

    Koitzsch, Christian; Aebi, Philippe

    2005-01-01

    This thesis focuses on the electronic properties of materials, which were explored with Angle Resolved Photoemission (ARPES) and Density Functional Theory (DFT). The natural fingerprint of electronic phenomena in crystalline solids, e.g. in this thesis the hydrogen-induced metal-insulator transition and the formation of standing electron waves in quantum wells, is the k-resolved band structure or in short the E(k) relation in the solid. The experimental technique to explore the occupied band ...

  3. Raman spectroscopy of single quantum well wires

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    We used the micro-Raman spectroscopy to investigate the V-grooved quantum well wires (QWWs), and first observed and assigned the Raman spectra of single QWW. They were the disorder induced modes at 223 and 243 cm-1, confined LO mode of GaAs QWW at 267 cm1, and higher order peaks of disorder induced modes at 488 and 707 cm-1.

  4. Energy loss rate in disordered quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Tripathi, P.; Ashraf, S. S. Z. [Centre of Excellence in Nanomaterials, Faculty of Engineering and Technology, Aligarh Muslim University, Aligarh-202002 (India); Hasan, S. T. [Physics Department, Faculty of Science, The M.S. University of Baroda, Vadodara-390002 (India); Sharma, A. C. [Physics Department, Sibli National College, Azamgarh-276128 (India)

    2014-04-24

    We report the effect of dynamically screened deformation potential on the electron energy loss rate in disordered semiconductor quantum well. Interaction of confined electrons with bulk acoustic phonons has been considered in the deformation coupling. The study concludes that the dynamically screened deformation potential coupling plays a significant role as it substantially affects the power dependency of electron relaxation on temperature and mean free path.

  5. Spatially indirect excitons in coupled quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lai, Chih-Wei Eddy [Univ. of California, Berkeley, CA (United States)

    2004-03-01

    Microscopic quantum phenomena such as interference or phase coherence between different quantum states are rarely manifest in macroscopic systems due to a lack of significant correlation between different states. An exciton system is one candidate for observation of possible quantum collective effects. In the dilute limit, excitons in semiconductors behave as bosons and are expected to undergo Bose-Einstein condensation (BEC) at a temperature several orders of magnitude higher than for atomic BEC because of their light mass. Furthermore, well-developed modern semiconductor technologies offer flexible manipulations of an exciton system. Realization of BEC in solid-state systems can thus provide new opportunities for macroscopic quantum coherence research. In semiconductor coupled quantum wells (CQW) under across-well static electric field, excitons exist as separately confined electron-hole pairs. These spatially indirect excitons exhibit a radiative recombination time much longer than their thermal relaxation time a unique feature in direct band gap semiconductor based structures. Their mutual repulsive dipole interaction further stabilizes the exciton system at low temperature and screens in-plane disorder more effectively. All these features make indirect excitons in CQW a promising system to search for quantum collective effects. Properties of indirect excitons in CQW have been analyzed and investigated extensively. The experimental results based on time-integrated or time-resolved spatially-resolved photoluminescence (PL) spectroscopy and imaging are reported in two categories. (i) Generic indirect exciton systems: general properties of indirect excitons such as the dependence of exciton energy and lifetime on electric fields and densities were examined. (ii) Quasi-two-dimensional confined exciton systems: highly statistically degenerate exciton systems containing more than tens of thousands of excitons within areas as small as (10 micrometer)2 were

  6. Physics of strained quantum well lasers

    CERN Document Server

    Loehr, John P

    1998-01-01

    When this publisher offered me the opportunity to \\\\Tite a book, some six years ago, I did not hesitate to say yes. I had just spent the last four years of graduate school struggling to understand the physics of strained quantum well lasers, and it seemed to me the whole experience was much more difficult that it should have been. For although many of the results I needed were easy to locate, the underlying physical premises and intervening steps were not. If only I had a book providing the derivations, I could have absorbed them and gone on my way. Such a book lies before you. It provides a unified and self-contained descrip­ tion of the essential physics of strained quantum well lasers, starting from first principles whenever feasible. The presentation I have chosen requires only the standard introductory background in quantum mechanics, solid state physics, and electromagnetics expected of entering graduate students in physics or elec­ trical engineering. A single undergraduate course in each of these su...

  7. 8-band and 14-band kp modeling of electronic band structure and material gain in Ga(In)AsBi quantum wells grown on GaAs and InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Gladysiewicz, M.; Wartak, M. S. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland)

    2015-08-07

    The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within the 8-band and 14-band kp models. The 14-band kp model was obtained by extending the standard 8-band kp Hamiltonian by the valence band anticrossing (VBAC) Hamiltonian, which is widely used to describe Bi-related changes in the electronic band structure of dilute bismides. It has been shown that in the range of low carrier concentrations n < 5 × 10{sup 18 }cm{sup −3}, material gain spectra calculated within 8- and 14-band kp Hamiltonians are similar. It means that the 8-band kp model can be used to calculate material gain in dilute bismides QWs. Therefore, it can be applied to analyze QWs containing new dilute bismides for which the VBAC parameters are unknown. Thus, the energy gap and electron effective mass for Bi-containing materials are used instead of VBAC parameters. The electronic band structure and material gain have been calculated for 8 nm wide GaInAsBi QWs on GaAs and InP substrates with various compositions. In these QWs, Bi concentration was varied from 0% to 5% and indium concentration was tuned in order to keep the same compressive strain (ε = 2%) in QW region. For GaInAsBi/GaAs QW with 5% Bi, gain peak was determined to be at about 1.5 μm. It means that it can be possible to achieve emission at telecommunication windows (i.e., 1.3 μm and 1.55 μm) for GaAs-based lasers containing GaInAsBi/GaAs QWs. For GaInAsBi/Ga{sub 0.47}In{sub 0.53}As/InP QWs with 5% Bi, gain peak is predicted to be at about 4.0 μm, i.e., at the wavelengths that are not available in current InP-based lasers.

  8. Optical spectroscopy of GaAs/AlGaAs V-groove quantum wires Quantum wells

    CERN Document Server

    Roshan, R

    2001-01-01

    In this thesis we report on optical spectroscopy of GaAs/AIGaAs quantum wires (QWRs), grown on pre-patterned semi-insulating GaAs (100) substrates by low-pressure metal organic vapour phase epitaxy (LP-MOVPE). Crescent-shaped quantum wires develop at the bottom of the grooves by self-organisation when a GaAs quantum well embedded in Al sub 0 sub . sub 3 Ga sub 0 sub . sub 7 As barriers was overgrown on the patterned surface. The overgrowth also resulted in the formation of vertical quantum wells (VQWs) in the AIGaAs barriers and sidewall quantum wells (SQWs) on the (111) surfaces that define the grooves. A narrow constriction (pinch-off) separates the QWRs from the side walls and provides two-dimensional confinement in them. Several types of wire arrangements are investigated in detail which includes single QWR, vertical stacked QWRs, lateral arrays of wires with sub-mu m pitch and gated QWRs. Both conventional far-field and near-field spectroscopic techniques are used to study these wires. A low-temperature ...

  9. Excitons in quantum-dot quantum-well nanoparticles

    Institute of Scientific and Technical Information of China (English)

    史俊杰

    2002-01-01

    A variational calculation is presented for the ground-state properties of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles. The relationship between the exciton states and structure parameters of QDQW nanoparticles is investigated, in which both the heavy-hole and the light-hole exciton states are considered. The results show that the confinement energies of the electron and hole states and the exciton binding energies depend sensitively on the well width and core radius of the QDQW structure. A detailed comparison between the heavy-hole and light-hole exciton states is given. Excellent agreement is found between experimental results and our calculated 1se-1sh transition energies.

  10. High signal-to-noise ratio quantum well bolometer materials

    Science.gov (United States)

    Wissmar, Stanley; Höglund, Linda; Andersson, Jan; Vieider, Christian; Savage, Susan; Ericsson, Per

    2006-09-01

    Novel single crystalline high-performance temperature sensing materials (quantum well structures) have been developed for the manufacturing of uncooled infrared bolometers. SiGe/Si and AlGaAs/GaAs quantum wells are grown epitaxially on standard Si and GaAs substrates respectively. The former use holes as charge carriers utilizing the discontinuities in the valence band structure, whereas the latter operate in a similar manner with electrons in the conduction band. By optimizing parameters such as the barrier height (by variation of the germanium/aluminium content respectively) and the fermi level E f (by variation of the quantum well width and doping level) these materials provide the potential to engineer layer structures with a very high temperature coefficient of resistance, TCR, as compared with conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio and well defined and uniform material properties, A comparison between the two (SiGe/Si and AlGaAs/GaAs) quantum well structures and their fundamental theoretical limits are discussed and compared to experimental results. A TCR of 2.0%/K and 4.5%/K have been obtained experimentally for SiGe/Si and AlGaAs/GaAs respectively. The noise level for both materials is measured as being several orders of magnitude lower than that of a-Si and VOx. These uncooled thermistor materials can be hybridized with read out circuits by using conventional flip-chip assembly or wafer level adhesion bonding. The increased bolometer performance so obtained can either be exploited for increasing the imaging system performance, i. e. obtaining a low NETD, or to reduce the vacuum packaging requirements for low cost applications (e.g. automotive).

  11. The Physics of Quantum Well Infrared Photodetectors

    CERN Document Server

    Choi, K K

    1999-01-01

    In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the ne

  12. Terahertz detection using double quantum well devices

    Science.gov (United States)

    Khodier, Majid; Christodoulou, Christos G.; Simmons, Jerry A.

    2001-12-01

    This paper discusses the principle of operation of an electrically tunable THz detector, working around 2.54 THz, integrated with a bowtie antenna. The detection is based on the idea of photon-assisted tunneling (PAT) in a double quantum well (DQW) device. The bowtie antenna is used to collect the THz radiation and feed it to the detector for processing. The Bowtie antenna geometry is integrated with the DQW device to achieve broadband characteristic, easy design, and compatibility with the detector fabrication process. The principle of operation of the detector is introduced first. Then, results of different bowtie antenna layouts are presented and discussed.

  13. Bound polarons in quantum dot quantum well structures

    Institute of Scientific and Technical Information of China (English)

    Xing Yan; Wang Zhi-Ping; Wang Xu

    2009-01-01

    The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the diclectric continuum approximation. The electron-phonon interaction Hamiltonian for QDQW structures is obtained and the exchange interaction between impurity and LO-phonons is discussed. The binding energy and the trapping energy of the bound polaron in CdS/HgS QDQW structures are calculated. The numcrical results reveal that there exist three branches of eigenfrequcncies of surface optical vibration in the CdS/HgS QDQW structure. It is also shown that the binding energy and the trapping energy increase as the inner radius of the QDQW structure decreases, with the outer radius fixed, and the trapping energy takes a major part of the binding energy when the inner radius is very small.

  14. Electronic Quantum Confinement in Cylindrical Potential Well

    CERN Document Server

    Baltenkov, A S

    2016-01-01

    The effects of quantum confinement on the momentum distribution of electrons confined within a cylindrical potential well have been analyzed. The motivation is to understand specific features of the momentum distribution of electrons when the electron behavior is completely controlled by the parameters of a non-isotropic potential cavity. It is shown that studying the solutions of the wave equation for an electron confined in a cylindrical potential well offers the possibility to analyze the confinement behavior of an electron executing one- or two-dimensional motion in the three-dimensional space within the framework of the same mathematical model. Some low-lying electronic states with different symmetries have been considered and the corresponding wave functions have been calculated; the behavior of their nodes and their peak positions with respect to the parameters of the cylindrical well has been analyzed. Additionally, the momentum distributions of electrons in these states have been calculated. The limi...

  15. Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, T.; Liu, B.; Smith, R.; Athanasiou, M.; Gong, Y.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

    2014-04-21

    A “coherent” nanocavity structure has been designed on two-dimensional well-ordered InGaN/GaN nanodisk arrays with an emission wavelength in the green spectral region, leading to a massive enhancement in resonance mode in the green spectra region. By means of a cost-effective nanosphere lithography technique, we have fabricated such a structure on an InGaN/GaN multiple quantum well epiwafer and have observed the “coherent” nanocavity effect, which leads to an enhanced spontaneous emission (SE) rate. The enhanced SE rate has been confirmed by time resolved photoluminescence measurements. Due to the coherent nanocavity effect, we have achieved a massive improvement in internal quantum efficiency with a factor of 88, compared with the as-grown sample, which could be significant to bridge the “green gap” in solid-state lighting.

  16. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  17. Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Kuldova, K; Vyborny, Z; Pangrac, J; Oswald, J [Institute of Physics of the AS CR, v. v. i., Cukrovarnicka 10, CZ-162 00 Praha 6 (Czech Republic); Molas, M; Borysiuk, J; Babinski, A, E-mail: kuldova@fzu.c [Institute of Experimental Physics, University of Warsaw, Ho z-dot a 69, PL-00-681 Warszawa (Poland)

    2010-09-01

    In this communication we report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs quantum dots (QDs) with GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention on sharp emission lines, which appear in both structures at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution to single excitons as well as biexcitons. Negative binding energy of biexcitons with systematic dependence on their energy was observed. It has been proposed that the investigated emission lines result from radiative recombination in flat non-fully developed QDs in the investigated structure. The attribution is confirmed by transmission electron microscopic analysis of investigated structures.

  18. Quantum Confinement Effects in Strained SiGe/Si Multiple Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Strained SiGe/Si multiple quantum wells (MQWs) were grown by cold-wall ultrahigh vacuum chemical vapor deposition (UHV/CVD). Photoluminescence measurement was performed to study the exciton energies of strained Si0.84 Ge0.16/Si MQWs with SiGe well widths ranging from 4.2nm to 25.4nm. The confinement energy of 43meV is found in the Si0.84Ge0.16/Si MQWs with well width of 4.2nm. The confinement energy was calculated by solving the problem of a particle confined in a single finite rectangular poteintial well using one band effect mass model. Experimental and theoretical confinement energies are in good agreement

  19. InAlGaAs/AlGaAs quantum wells: line widths, transition energies and segregation

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Hvam, Jørn Märcher; Langbein, Wolfgang

    2000-01-01

    We investigate the optical properties of InAlCaAs/AlGaAs quantum wells pseudomorphically grown on GaAs using molecular beam epitaxy (MBE). The transition energies, measured with photoluminescence (PL), are modelled solving the Schrodinger equation, and taking into account segregation in the group...

  20. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, Edik U.; Livshits, Daniil

    2010-01-01

    We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth...

  1. Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing

    DEFF Research Database (Denmark)

    Jensen, Jacob Riis; Hvam, Jørn Märcher; Langbein, Wolfgang

    1999-01-01

    Knowledge of the quaternary InAlGaAs material system is very limited for the composition range relevant for growth on GaAs substrates. We report on the characterization and modeling of InAlGaAs quantum wells with AlGaAs barriers, grown pseudomorphically on a GaAs substrate with molecular beam...

  2. Quantum well intermixing for photonic integrated circuits

    Science.gov (United States)

    Sun, Xiaolan

    2007-12-01

    In this thesis, several aspects of GaAsSb/AlSb multiple quantum well (MQW) heterostructures have been studied. First, it was shown that the GaAsSb MQWs with a direct band gap near 1.5 mum at room temperature could be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors, which can be applied to Vertical Cavity Surface Emitting Lasers (VCSELs). Secondly, an enhanced photoluminescence from GaAsSb MQWs was reported. The photoluminescence strength increased dramatically with arsenic fraction as conjectured. The peak photoluminescence from GaAs0.31Sb 0.69 was 208 times larger than that from GaSb. Thirdly, the strong photoluminescence from GaAsSb MQWs and the direct nature of the band gap near 1.5 mum at room temperature make the material favorable for intermixing studies. The samples were treated with ion implantation followed by rapid thermal annealing (RTA). A band gap blueshift as large as 198 nm was achieved with a modest ion dose and moderate annealing temperature. Photoluminescence strength for implanted samples generally increased with the annealing temperature. The energy blueshift was attributed to the interdiffusion of both the group III and group V sublattices. Finally, based on the interesting properties of GaAsSb MQWs, including the direct band gap near 1.5 mum, strong photoluminescence, a wide range of wavelength (1300--1500 nm) due to ion implantation-induced quantum well intermixing (QWI), and subpicosecond spin relaxation reported by Hall et al, we proposed to explore the possibilities for ultra-fast optical switching by investigating spin dynamics in semiconductor optical amplifiers (SOAs) containing InGaAs and GaSb MQWs. For circularly polarized pump and probe waves, the numerical simulation on the modal indices showed that the difference between the effective refractive index of the TE and TM modes was quite large, on the order of 0.03, resulting in a significant phase mismatch in a traveling length larger than 28 mum. Thus the

  3. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

    Science.gov (United States)

    Yang, Di; Wang, Lai; Lv, Wen-Bin; Hao, Zhi-Biao; Luo, Yi

    2015-06-01

    Phosphor-free white light-emitting diodes consisting of 4 layers of InGaN/GaN quantum dots and 4 layers of quantum wells have been grown by metal organic chemical vapor deposition. A white emission was demonstrated under electrical injection by mixing the green-yellow light from quantum dots and the blue light from quantum wells. At the injection current of 5 mA, the electroluminescence peak wavelengths of quantum dots and quantum wells were 548 nm and 450 nm, respectively, resulting in the color-rendering index Ra of 62. As the injection current increased, a faster emission enhancement of quantum well and an emission blue shift of the quantum dots were observed, which led to the decrease of Ra.

  4. Bandedge-engineered quantum well laser

    Science.gov (United States)

    Asryan, Levon V.; Kryzhanovskaya, Natalia V.; Maximov, Mikhail V.; Egorov, Anton Yu; Zhukov, Alexey E.

    2011-05-01

    A promising type of quantum well (QW) lasers is discussed—bandedge-engineered (BE) QW lasers. The use of two asymmetric barrier layers (one on each side of the QW) in such lasers prevents establishing a bipolar population in the optical confinement layer (OCL) and thus suppresses the parasitic electron-hole recombination there. We discuss semiconductor alloys suitable for pseudomorphic growth of BE QW lasers on GaAs substrates and propose material compositions for such lasers. We use an analytical model to calculate the device characteristics. Due to suppression of the recombination in the OCL, the threshold current density of a BE QW laser is considerably reduced and the characteristic temperature T0 is increased compared to conventional QW lasers. Ideally, T0 of a BE QW laser can be as high as 300 K at room temperature. In more realistic BE QW lasers incorporating thin indent layers (located between the QW and each of the asymmetric barrier layers), the threshold current density is still low, and T0 is above 200 K for practical cavity lengths. Our results suggest that BE QW lasers offer major advantages over conventional QW lasers for low-threshold and high-temperature-stable operation.

  5. Enhanced quantum efficiency for CsI grown on a graphite-based substrate coating

    CERN Document Server

    Friese, J; Homolka, J; Kastenmüller, A; Maier-Komor, P; Peter, M; Zeitelhack, K; Kienle, P; Körner, H J

    1999-01-01

    Quantum efficiencies (QE) in the vacuum ultraviolet (VUV) wavelength region have been measured for solid CsI layers on various substrates. The CsI films were deposited applying electron beam evaporation. The QE measurements were performed utilizing synchrotron radiation as well as light from a deuterium lamp. A GaAsP diode with a sensitivity calibration traceable to a primary radiation standard was used for normalization. For CsI layers grown on resin-stabilized graphite films a significant enhancement of QE was observed. Substrates suitable for gas detector applications and aging properties were investigated. The procedures to prepare and reproduce high quantum efficient CsI layers are described.

  6. Coherent light from E-field induced quantum coupling of exciton states in superlattice-like quantum wells

    DEFF Research Database (Denmark)

    Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher;

    1999-01-01

    Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investig...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....

  7. Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration

    Science.gov (United States)

    Pabla, A. S.; Woodhead, J.; Khoo, E. A.; Grey, R.; David, J. P. R.; Rees, G. J.

    1996-03-01

    The spectral electroluminescence characteristics of broad-area (Al)GaAs/In0.23Ga0.77As/(Al)GaAs single quantum well separate confinement heterostructure lasers grown on (111)B GaAs have been studied under forward biased current injection. A room-temperature threshold current density of 750 A/cm2 is measured for a 1000 μm laser. The subthreshold electroluminescence spectrum blue shifts with increasing current up to the point of lasing threshold. Our measurements reveal that lasing is achieved while there is a strong residual or ``unscreened'' electric field across the quantum well. Based on these observations we outline how piezoelectric quantum wells can be used to monolithically integrate a quantum well laser with a blue-shifting electroabsorption modulator.

  8. The quantum spectra analysis of the circular billiards in wells

    Institute of Scientific and Technical Information of China (English)

    Zhang Yan-Hui; Zhang Li-Qin; Xu Xue-You; Ge Mei-Hua; Lin Sheng-Lu; Du Meng-Li

    2006-01-01

    We use a recently defined quantum spectral function and apply the method of closed-orbit theory to the 2D circular billiard system. The quantum spectra contain rich information of all classical orbits connecting two arbitrary points in the well. We study the correspondence between quantum spectra and classical orbits in the circular, 1/2 circular and 1/4 circular wells using the analytic and numerical methods. We find that the peak positions in the Fourier-transformed quantum spectra match accurately with the lengths of the classical orbits. These examples show evidently that semi-classical method provides a bridge between quantum and classical mechanics.

  9. Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

    KAUST Repository

    Wu, Feng

    2017-05-03

    Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at similar to 350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

  10. Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

    Science.gov (United States)

    Wu, Feng; Sun, Haiding; AJia, Idris A.; Roqan, Iman S.; Zhang, Daliang; Dai, Jiangnan; Chen, Changqing; Feng, Zhe Chuan; Li, Xiaohang

    2017-06-01

    Significant internal quantum efficiency (IQE) enhancement of GaN/AlGaN multiple quantum wells (MQWs) emitting at ~350 nm was achieved via a step quantum well (QW) structure design. The MQW structures were grown on AlGaN/AlN/sapphire templates by metal-organic chemical vapor deposition (MOCVD). High resolution x-ray diffraction (HR-XRD) and scanning transmission electron microscopy (STEM) were performed, showing sharp interface of the MQWs. Weak beam dark field imaging was conducted, indicating a similar dislocation density of the investigated MQWs samples. The IQE of GaN/AlGaN MQWs was estimated by temperature dependent photoluminescence (TDPL). An IQE enhancement of about two times was observed for the GaN/AlGaN step QW structure, compared with conventional QW structure. Based on the theoretical calculation, this IQE enhancement was attributed to the suppressed polarization-induced field, and thus the improved electron-hole wave-function overlap in the step QW.

  11. Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Maldonado, D., E-mail: david.hernandez@uca.es [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Herrera, M.; Sales, D.L. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Alonso-Gonzalez, P.; Gonzalez, Y.; Gonzalez, L. [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain); Pizarro, J.; Galindo, P.L. [Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain); Molina, S.I. [Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)

    2010-07-01

    The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

  12. Characteristics of InGaN multiple quantum well blue-violet laser diodes

    Institute of Scientific and Technical Information of China (English)

    LI Deyao; YANG Hui; LIANG Junwu; ZHANG Shuming; WANG Jianfeng; CHEN Jun; CHEN Lianghui; CHONG Ming; ZHU Jianjun; ZHAO Degang; LIU Zongshun

    2006-01-01

    Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.orted. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.

  13. Energy level spectroscopy of InSb quantum wells using quantum-well LED emission

    Science.gov (United States)

    Tenev, T. G.; Palyi, A.; Mirza, B. I.; Nash, G. R.; Fearn, M.; Smith, S. J.; Buckle, L.; Emeny, M. T.; Ashley, T.; Jefferson, J. H.; Lambert, C. J.

    2009-02-01

    We have investigated the low-temperature optical properties of InSb quantum-well (QW) light-emitting diodes, with different barrier compositions, as a function of well width. Three devices were studied: QW1 had a 20 nm undoped InSb quantum well with a barrier composition of Al0.143In0.857Sb , QW2 had a 40 nm undoped InSb well with a barrier composition of Al0.077In0.923Sb , and QW3 had a 100 nm undoped InSb well with a barrier composition of Al0.025In0.975Sb . For QW1, the signature of two transitions (CB1-HH1 and CB1-HH2) can be seen in the measured spectrum, whereas for QW2 and QW3 the signature of a large number of transitions is present in the measured spectra. In particular transitions to HH2 can be seen, the first time this has been observed in AlInSb/InSb heterostructures. To identify the transitions that contribute to the measured spectra, the spectra have been simulated using an eight-band k.p calculation of the band structure together with a first-order time-dependent perturbation method (Fermi golden rule) calculation of spectral emittance, taking into account broadening. In general there is good agreement between the measured and simulated spectra. For QW2 we attribute the main peak in the experimental spectrum to the CB2-HH1 transition, which has the highest overall contribution to the emission spectrum of QW2 compared with all the other interband transitions. This transition normally falls into the category of “forbidden transitions,” and in order to understand this behavior we have investigated the momentum matrix elements, which determine the selection rules of the problem.

  14. Biexciton binding energy in ZnSe quantum wells and quantum wires

    DEFF Research Database (Denmark)

    Wagner, Hans-Peter; Langbein, Wolfgang; Hvam, Jørn Märcher

    2002-01-01

    The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating...

  15. Some reasons of emission variation in InAs quantum dot-in-a-well structures

    Science.gov (United States)

    Torchynska, T. V.; Palacios Gomez, J.; Gómez Gasga, G.; Vivas Hernandez, A.; Velazquez Lozada, E.; Polupan, G.; Shcherbyna, Ye S.

    2010-09-01

    Photoluminescence (PL) and X ray diffraction have been studied in InAs quantum dots (QDs) embedded in symmetric In0.15Ga1-0.15As/GaAs quantum wells (dot-in-a-well, DWELL) with QDs grown at different temperatures. The density of QDs decreases from 1.1×1011 down to 1.3×1010 cm-2 with increasing the QD growth temperatures from 470 to 535°C. The QD density decreasing in DWELLs is accompanied by the non monotonous variation of QD parameters. The PL intensity increases and the PL peak shifts to low energy in structures with QDs grown at 490 and 510°C. On the contrary the structures with QDs grown at 525 and 535°C are characterized by lower PL intensities and PL peak positions shifted to higher energy. The method of X-ray diffraction has been applied with the aim to study the variation of elastic strain in DWELL structures with QDs grown at different temperatures. It was shown that the minimum of elastic strain corresponds to DWELL with QDs grown at 490-525 °C. For lower (470 °C) and higher (535 °C) QD growth temperatures the level of compressive strain increased in DWELLs. The reasons of strain variation are discussed as well.

  16. (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires

    DEFF Research Database (Denmark)

    Gislason, Hannes; Sørensen, Claus Birger; Hvam, Jørn Märcher

    1996-01-01

    High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T-shaped GaAs/AlGaAs quantum wires, We investigate theoretically and experimentally 20-200 Angstrom wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved...... edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Angstrom is derived from the photoluminescence linewidths. The growth rate...

  17. Polaron Energy and Effective Mass in Parabolic Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    WANG Zhi-Ping; LIANG Xi-Xia

    2005-01-01

    @@ The energy and effective mass of a polaron in a parabolic quantum well are studied theoretically by using LLP-like transformations and a variational approach. Numerical results are presented for the polaron energy and effective mass in the GaAs/Al0.3Ga0.7As parabolic quantum well. The results show that the energy and the effective mass of the polaron both have their maxima in the finite parabolic quantum well but decrease monotonously in the infinite parabolic quantum well with the increasing well width. It is verified that the bulk longitudinal optical phonon mode approximation is an adequate formulation for the electron-phonon coupling in parabolic quantum well structures.

  18. Development of an infrared detector: Quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    LU Wei; LI Ling; ZHENG HongLou; XU WenLan; XIONG DaYuan

    2009-01-01

    The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWlP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.

  19. Development of an infrared detector: Quantum well infrared photodetector

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The progress in the quantum well infrared photo-detector (QWIP) based on quantum confinement in semiconductor in recent 10 years has been reviewed. The differences between QWIP and the HgCdTe (HCT) infrared detector as well as their compensation are analyzed. The outlook for near-future trends in QWIP technologies is also presented.

  20. Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Cundiff, Steven T. [Univ. of Colorado, Boulder, CO (United States)

    2016-05-03

    This final report describes the activities undertaken under grant "Optical Two-Dimensional Spectroscopy of Disordered Semiconductor Quantum Wells and Quantum Dots". The goal of this program was to implement optical 2-dimensional Fourier transform spectroscopy and apply it to electronic excitations, including excitons, in semiconductors. Specifically of interest are quantum wells that exhibit disorder due to well width fluctuations and quantum dots. In both cases, 2-D spectroscopy will provide information regarding coupling among excitonic localization sites.

  1. Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

    Science.gov (United States)

    Han, Yu; Li, Qiang; Lau, Kei May

    2016-12-01

    We report the characteristics of indium gallium arsenide stacked quantum structures inside planar indium phosphide nanowires grown on exact (001) silicon substrates. The morphological evolution of the indium phosphide ridge buffers inside sub-micron trenches has been studied, and the role of inter-facet diffusion in this process is discussed. Inside a single indium phosphide nanowire, we are able to stack quantum structures including indium gallium arsenide flat quantum wells, quasi-quantum wires, quantum wires, and ridge quantum wells. Room temperature photoluminescence measurements reveal a broadband emission spectrum centered at 1550 nm. Power dependent photoluminescence analysis indicates the presence of quasi-continuum states. This work thus provides insights into the design and growth process control of multiple quantum wells in wire structures for high performance nanowire lasers on a silicon substrate with 1550 nm band emission.

  2. Theoretical analyses of the elastic and electronic properties of InAs QDs and QD-in-WELL structures grown on GaAs high index substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bennour, M., E-mail: mnbnnr@gmail.com [Micro-Optoelectronic and Nanostructures Laboratory, Department of Physics, Faculty of Sciences, Monastir University, Environment Street, 5019 Monastir (Tunisia); Bouzaiene, L.; Saidi, F. [Micro-Optoelectronic and Nanostructures Laboratory, Department of Physics, Faculty of Sciences, Monastir University, Environment Street, 5019 Monastir (Tunisia); Sfaxi, L. [Micro-Optoelectronic and Nanostructures Laboratory, Sousse University (Tunisia); Maaref, H. [Micro-Optoelectronic and Nanostructures Laboratory, Department of Physics, Faculty of Sciences, Monastir University, Environment Street, 5019 Monastir (Tunisia)

    2015-10-25

    We report a theoretical study of the wetting layer thickness, In{sub x}Ga{sub (1−x)}As quantum-well thickness and Indium composition effects on the physical properties of InAs quantum dots (QDs) and quantum dots-in-well (QD-in-WELL) grown on GaAs high index substrates. Finite element method is used to calculate the strain, piezoelectric field distributions and the electronic structure. Coulomb interaction has been taken as a perturbation in the interband transition energy. The ground–state transition energy is influenced by the wetting layer thickness (WL) and the substrate orientation; however, it is not affected by the InGaAs quantum-well thickness. We have found that the tensile strain at the interface is the main factor responsible for the difficulty of self-assembled InAs QDs formation on GaAs(111) substrate. On the other hand, the stability of the relaxed strain into QD–IN–WELL depended on the Indium composition and the quantum-well thickness as well as the orientation substrate. The appropriate Indium composition in the InGaAs quantum-well is found to be 0.3 for the QD–IN–WELL grown on GaAs(111) and 0.2 for the QD–IN–WELL grown on GaAs(119). This work can be helpful to controlling the wavelength of QD–IN–WELL grown on high index substrates by changing the In composition or the quantum well-thickness. - Graphical abstract: The piezoelectric field was found to be more important in large QD than that of small QD which contribute to a little blue shift between small and large QD, when the substrate disorientation increased from (119) to (111). - Highlights: • Finite element method used to calculate strain, piezoelectric field and energy gap. • Physical properties of InAs/GaAs(11n) QDs and InGaAs/InAs/InGaAs/GaAs(11n) QD-in Well. • Stability of relaxed strain into quantum dots and quantum dots-in-well was discussed. • Tensile strain interface is responsible of difficulty self-assembled InAs/GaAs(111)QD.

  3. Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

    Energy Technology Data Exchange (ETDEWEB)

    Ramírez-Morales, A.; Martínez-Orozco, J. C.; Rodríguez-Vargas, I. [Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico)

    2014-05-15

    The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.

  4. Photoluminescence from narrow InAs-AlSb quantum wells

    Science.gov (United States)

    Brar, Berinder; Kroemer, Herbert; Ibbetson, James; English, John H.

    1993-01-01

    We report on photoluminescence spectra from narrow InAs-AlSb quantum wells. Strong, clearly resolved peaks for well widths from 2 to 8 monolayers were observed. Transmission electron micrographs show direct evidence for the structural quality of the quantum well structures. The transition energies of the narrowest wells suggest a strong influence of the AlSb X-barrier on the electronic states in the conduction band.

  5. Multichannel scattering of charge carriers on quantum well heterostructures

    CERN Document Server

    Galiev, V I; Polupanov, A F; Goldis, E M; Tansli, T L

    2002-01-01

    An efficient numerical analytical method has been developed for finding continuum spectrum states in quantum well systems with arbitrary potential profiles that are described by coupled Schroedinger equations. Scattering states and S matrix have been built for the case of multichannel scattering in one-dimensional systems with quantum wells and their symmetry properties are obtained and analyzed. The method is applied for studying hole scattering by strained GaInAs-InGaAsP quantum wells. Coefficients of the hole transmission and reflection as well as delay time are calculated as functions of the energy of the incident hole for various values of parameters of structures and values of the momentum

  6. Transversal confined polar optical phonons in spherical quantum-dot/quantum-well nanostructures

    Science.gov (United States)

    Comas, F.; Trallero-Giner, C.; Prado, S. J.; Marques, G. E.; Roca, E.

    2006-02-01

    Confined polar optical phonons are studied in a spherical quantum-dot/quantum-well (QD/QW) nanostructure by using an approach that takes into account the coupling of electromechanical oscillations and is valid in the long-wave limit. This approach was developed a few years ago and provides results beyond the usually applied dielectric continuum approach (DCA), where just the electric aspect of the oscillations is considered. In the present paper we limit ourselves to the study of the so-called uncoupled modes, having a purely transversal character and not involving an electric potential. We display the dispersion curves for the frequencies considering three possible nanostructures, which show different bulk phonon curvatures near the Brillouin zone -point and have been actually grown: ZnS/CdSe, CdSe/CdS and CdS/HgS. A detailed discussion of the results obtained is made, emphasizing the novelties provided by our treatment and the relevance of infrared spectroscopy in the characterization of the geometrical features of the QD/QW nanostructure.

  7. Silicon quantum wires on Ag(1 1 0): Fermi surface and quantum well states

    Energy Technology Data Exchange (ETDEWEB)

    Valbuena, M.A. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas (CSIC), C/ Sor Juana Ines de la Cruz, 3, 28049 Madrid (Spain); Avila, J. [Synchrotron SOLEIL, Orme des Merisiers, Saint Aubin BP 48, 91192 Gif sur Yvette Cedex (France)], E-mail: jose.avila@synchrotron-soleil.fr; Davila, M.E. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas (CSIC), C/ Sor Juana Ines de la Cruz, 3, 28049 Madrid (Spain); Leandri, C.; Aufray, B.; Le Lay, G. [CRMCN-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9 (France); Asensio, M.C. [Synchrotron SOLEIL, Orme des Merisiers, Saint Aubin BP 48, 91192 Gif sur Yvette Cedex (France)

    2007-10-31

    One-dimensional Si quantum wires have been grown on silver single crystals upon deposition of {approx}0.25 monolayer of Si on Ag(1 1 0) surfaces. Scanning tunneling microscopy (STM) clearly shows parallel 1D Si chains along the [-1 1 0] Ag crystallographic direction. Low Energy Electron Diffraction (LEED) confirms the massively parallel assembly of these selforganized Nanowires (NWs). We have characterized these nano-objects by measuring the dispersion of the NWs valence band at room temperature using Angle-Resolved PhotoEmission Spectroscopy (ARPES). Also, the Fermi Surface (FS) of the Ag(1 1 0) substrate has been mapped before and after the silicon deposition, trying to put in evidence the metallic or semiconductor character of the NWs silicon's states close to the Fermi level. Our results show the existence of well-defined quantum states associated to the silicon super-structure. Both LEED and ARUPS results confirm that the NWs have typical 1D features, however their metallic or semiconductor character could not be confirmed.

  8. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.

  9. Dynamics of electron in a surface quantum well

    Institute of Scientific and Technical Information of China (English)

    Wang Li-Fei; Yang Guang-Can

    2009-01-01

    This paper studies the quantum dynamics of electrons in a surface quantum well in the time domain with autocorrelation of wave packet. The evolution of the wave packet for different manifold eigenstates with finite and infinite lifetimes is investigated analytically. It is found that the quantum coherence and evolution of the surface electronic wave packet can be controlled by the laser central energy and electric field. The results show that the finite lifetime of excited states expedites the dephasing of the coherent electronic wave packet significantly. The correspondence between classical and quantum mechanics is shown explicitly in the system.

  10. Fisher information and quantum potential well model for finance

    Energy Technology Data Exchange (ETDEWEB)

    Nastasiuk, V.A., E-mail: nasa@i.ua

    2015-09-25

    The probability distribution function (PDF) for prices on financial markets is derived by extremization of Fisher information. It is shown how on that basis the quantum-like description for financial markets arises and different financial market models are mapped by quantum mechanical ones. - Highlights: • The financial Schrödinger equation is derived using the principle of minimum Fisher information. • Statistical models for price variation are mapped by the quantum models of coupled particle. • The model of quantum particle in parabolic potential well corresponds to Efficient market.

  11. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

    Energy Technology Data Exchange (ETDEWEB)

    Skogen, Erik J.

    2016-10-25

    The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

  12. Minimal length uncertainty relation and gravitational quantum well

    NARCIS (Netherlands)

    Brau, F.; Buisseret, F.

    2006-01-01

    The dynamics of a particle in a gravitational quantum well is studied in the context of nonrelativistic quantum mechanics with a particular deformation of a two-dimensional Heisenberg algebra. This deformation yields a new short-distance structure characterized by a finite minimal uncertainty in pos

  13. Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

    Science.gov (United States)

    Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

    2009-01-01

    In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

  14. Students' Conceptual Difficulties in Quantum Mechanics: Potential Well Problems

    Science.gov (United States)

    Ozcan, Ozgur; Didis, Nilufer; Tasar, Mehmet Fatih

    2009-01-01

    In this study, students' conceptual difficulties about some basic concepts in quantum mechanics like one-dimensional potential well problems and probability density of tunneling particles were identified. For this aim, a multiple choice instrument named Quantum Mechanics Conceptual Test has been developed by one of the researchers of this study…

  15. High Spatial Resolution of an Optical Addressing Spatial Light Modulator Made by Photorefractive Semi-Insulting Multiple Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    陈兢; 李春勇; 韩英军; 郭丽伟; 黄绮; 张治国; 汤俊雄; 段明浩

    2002-01-01

    We use nondegenerate four-wave mixing to study the spatial resolution of photorefractive semi-insulating multiple quantum wells grown by molecular beam epitaxy. By optimizing the experimental conditions, we have demonstrated that our sample has spatial resolution up to 2.5μm, which approaches the theoretical limit. We also analyse the factors that affect the spatial resolution of multiple quantum wells.

  16. Effective-mass theory for coupled quantum dots grown on (11N)-oriented substrates

    Institute of Scientific and Technical Information of China (English)

    Li Shu-Shen; Xia Jian-Bai

    2007-01-01

    The electronic structures of coupled quantum dots grown on (11N)-oriented substrates are studied in the framework of effective-mass envelope-function theory. The results show that the all-hole subbands have the smallest widths and the optical properties are best for the (113), (114), and (115) growth directions. Our theoretical results agree with the available experimental data. Our calculated results are useful for the application of coupled quantum dots in photoelectric devices.

  17. Piezo-Phototronic Effect in a Quantum Well Structure.

    Science.gov (United States)

    Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

    2016-05-24

    With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

  18. Inter-Well Coupling and Resonant Tunneling Modes of Multiple Graphene Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    安丽萍; 王同标; 刘念华

    2011-01-01

    We investigate the inter-well coupling of multiple graphene quantum well structures consisting of graphene superlattices with different periodic potentials. The general form of the eigenlevel equation for the bound states of the quantum well is expressed in terms of the transfer matrix elements. It is found that the electronic transmission exhibits resonant tunneling peaks at the eigenlevels of the bound states and shifts to the higher energy with increasing the incident angle. If there are N coupled quantum wells, the resonant modes have N-fold splitting. The peaks of resonant tunneling can be controlled by modulating the graphene barriers.

  19. Barrier and well-width dependence of optical emission of GaN/AlGaN quantum well nanostructures

    Directory of Open Access Journals (Sweden)

    H. Haratizadeh

    2007-06-01

    Full Text Available Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL and time resolved photoluminescence (TRPL at low-temperature. PL spectra exhibit a blue-shifted emission of AlGaN/GaN quantum well (QW nanostructures by decreasing the barrier width contrary to the arsenide system. The trend of the barrier-width dependence of the internal polarization field is reproduced by using simple electrostatic arguments. In addition the effect of well width variation on the optical transition and decay time of GaN MQWs have been investigated and it has been shown that the screening of the piezoelectric field and the electron-hole separation are strongly dependent on the well thickness and have a profound effect on the optical properties of the GaN/AlGaN MQWs.

  20. Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells

    Science.gov (United States)

    Miyoshi, Makoto; Tsutsumi, Tatsuya; Kabata, Tomoki; Mori, Takuma; Egawa, Takashi

    2017-03-01

    We investigated the effect of well layer thicknesses on the external quantum efficiency (EQE) and energy conversion efficiency (ECE) for InGaN/GaN multiple quantum well (MQW) solar cells grown on sapphire substrates by metalorganic chemical vapor deposition. The results indicated that EQE and ECE have maximum values at a specific well thickness. When the well thickness is sufficiently thin, EQE and ECE increase with an increase in the well thickness owing to an increase in light absorption. Then, once the well thickness surpasses a critical thickness, EQE and ECE begin to decrease owing to the influence of nonradiative recombination processes, which was indicated by the static and dynamic photoluminescence analyses. The critical well thickness probably depends not only on the MQW design but also on growth conditions. Further, we confirmed that the increased total thickness of the stacked well layers leads to increased light absorption and thereby contributes to the improvement of solar cell performance. A high short circuit current density of 1.34 mA/cm2 and a high ECE of 1.31% were achieved for a InGaN/GaN MQW solar cell with a 3.2-nm-thick InGaN well with total well thickness of 115 nm.

  1. Performance evaluation of quantum well infrared phototransistor instrumentation through modeling

    Science.gov (United States)

    El-Tokhy, Mohamed S.; Mahmoud, Imbaby I.

    2014-05-01

    This paper presents a theoretical analysis for the characteristics of quantum well infrared phototransistors (QWIPTs). A mathematical model describing this device is introduced under nonuniformity distribution of quantum wells (QWs). MATLAB environment is used to devise this model. Furthermore, block diagram models through the VisSim environment were used to describe the device characteristics. The developed models are used to investigate the behavior of the device with different values of performance parameters such as bias voltage, spacing between QWs, and temperature. These parameters are tuned to enhance the performance of these quantum phototransistors through the presented modeling. Moreover, the resultant performance characteristics and comparison between both QWIPTs and quantum wire infrared phototransistors are investigated. Also, the obtained results are validated against experimental published work and full agreements are obtained.

  2. Dot-in-Well Quantum-Dot Infrared Photodetectors

    Science.gov (United States)

    Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

    2008-01-01

    Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

  3. Efficiency studies on semipolar GaInN-GaN quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, Ferdinand; Meisch, Tobias; Elkhouly, Karim [Institute of Optoelectronics, Ulm University (Germany)

    2016-12-15

    In order to clarify the reasons for the fairly poor electroluminescence (EL) performance of semipolar LED structures grown on patterned sapphire wafers, we have analyzed both, pure photoluminescence (PL) test structures without doping only containing 5 GaInN quantum wells and full EL test structures, all emitting at a wavelength of about 510 nm. Evaluating the PL intensity over a wide range of temperatures and excitation powers, we conclude that such quantum wells possess a fairly large internal quantum efficiency of about 20%. However, on EL test structures containing nominally the same quantum wells, we obtained an optical output power of only about 150μW at an applied current of 20 mA. This may be due partly to some thermal destruction of the quantum wells by the overgrowth with p-GaN. Even more important seems to be the not yet finally optimized p-doping of these structures. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. The Quantum Well of One-Dimensional Photonic Crystals

    Directory of Open Access Journals (Sweden)

    Xiao-Jing Liu

    2015-01-01

    Full Text Available We have studied the transmissivity of one-dimensional photonic crystals quantum well (QW with quantum theory approach. By calculation, we find that there are photon bound states in the QW structure (BA6(BBABBn(AB6, and the numbers of the bound states are equal to n+1. We have found that there are some new features in the QW, which can be used to design optic amplifier, attenuator, and optic filter of multiple channel.

  5. Crystal Phase Quantum Well Emission with Digital Control.

    Science.gov (United States)

    Assali, S; Lähnemann, J; Vu, T T T; Jöns, K D; Gagliano, L; Verheijen, M A; Akopian, N; Bakkers, E P A M; Haverkort, J E M

    2017-09-18

    One of the major challenges in the growth of quantum well and quantum dot heterostructures is the realization of atomically sharp interfaces. Nanowires provide a new opportunity to engineer the band structure as they facilitate the controlled switching of the crystal structure between the zinc-blende (ZB) and wurtzite (WZ) phases. Such a crystal phase switching results in the formation of crystal phase quantum wells (CPQWs) and quantum dots (CPQDs). For GaP CPQWs, the inherent electric fields due to the discontinuity of the spontaneous polarization at the WZ/ZB junctions lead to the confinement of both types of charge carriers at the opposite interfaces of the WZ/ZB/WZ structure. This confinement leads to a novel type of transition across a ZB flat plate barrier. Here, we show digital tuning of the visible emission of WZ/ZB/WZ CPQWs in a GaP nanowire by changing the thickness of the ZB barrier. The energy spacing between the sharp emission lines is uniform and is defined by the addition of single ZB monolayers. The controlled growth of identical quantum wells with atomically flat interfaces at predefined positions featuring digitally tunable discrete emission energies may provide a new route to further advance entangled photons in solid state quantum systems.

  6. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

    Science.gov (United States)

    Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

    2016-08-01

    We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO2 and thermally evaporated SrF2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al)GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

  7. Quantum well electronic states in a tilted magnetic field

    Science.gov (United States)

    Trallero-Giner, C.; Padilha, J. X.; Lopez-Richard, V.; Marques, G. E.; Castelano, L. K.

    2017-08-01

    We report the energy spectrum and the eigenstates of conduction and uncoupled valence bands of a quantum well under the influence of a tilted magnetic field. In the framework of the envelope approximation, we implement two analytical approaches to obtain the nontrivial solutions of the tilted magnetic field: (a) the Bubnov-Galerkin spectral method and b) the perturbation theory. We discuss the validity of each method for a broad range of magnetic field intensity and orientation as well as quantum well thickness. By estimating the accuracy of the perturbation method, we provide explicit analytical solutions for quantum wells in a tilted magnetic field configuration that can be employed to study several quantitative phenomena.

  8. Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

    Directory of Open Access Journals (Sweden)

    A Bianconi

    2006-09-01

    Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

  9. Coherent excitonic nonlinearity versus inhomogeneous broadening in single quantum wells

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Borri, Paola; Hvam, Jørn Märcher;

    1998-01-01

    The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms...

  10. Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

    Science.gov (United States)

    Dmukauskas, M.; Kadys, A.; Malinauskas, T.; Grinys, T.; Reklaitis, I.; Badokas, K.; Skapas, M.; Tomašiūnas, R.; Dobrovolskas, D.; Stanionytė, S.; Pietzonka, I.; Strassburg, M.; Lugauer, H.-J.

    2016-12-01

    The paper reports on fully strained green light emitting InGaN/GaN multiple quantum wells, grown by metalorganic vapor phase epitaxy, using metal precursor multiple flow interruptions during InGaN quantum well growth. Optimization of the interruption timing (pulse t 1  =  20 s, pause t 2  =  12 s) lets us reach the integrated photoluminescence enhancement for the growth at temperature 780 ºC. The enhancement, as a function of pause duration, appeared to be pulse duration dependent: a lower enhancement can be achieved using shorter pulses with optimized relatively shorter pauses. Indium evaporation during the interruption time was interpreted as the main issue to keep the layers intact. Quantum wells revealing the highest photoluminescence enhancement were inspected for interface quality, layer thickness, growth speed, strain, surface morphology and roughness by TEM, XRD and AFM techniques, and compared with the one grown in the conventional mode.

  11. Compositional dependence of the band gap in Ga(NAsP) quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Jandieri, K., E-mail: kakhaber.jandieri@physik.uni-marburg.de; Ludewig, P.; Wegele, T.; Beyer, A.; Kunert, B.; Springer, P.; Baranovskii, S. D.; Koch, S. W.; Volz, K.; Stolz, W. [Materials Science Center and Faculty of Physics, Philipps-University Marburg, Marburg (Germany)

    2015-08-14

    We present experimental and theoretical studies of the composition dependence of the direct band gap energy in Ga(NAsP)/GaP quantum well heterostructures grown on either (001) GaP- or Si-substrates. The theoretical description takes into account the band anti-crossing model for the conduction band as well as the modification of the valence subband structure due to the strain resulting from the pseudomorphic epitaxial growth on the respective substrate. The composition dependence of the direct band gap of Ga(NAsP) is obtained for a wide range of nitrogen and phosphorus contents relevant for laser applications on Si-substrate.

  12. Quantum well infrared photodetectors (QWIP) with selectively regrown N-GaAs plugs

    Science.gov (United States)

    Matsukura, Yusuke; Nishino, Hironori; Tanaka, Hitoshi; Fujii, Toshio

    2001-10-01

    We fabricated the GaAs/AlGaAs Quantum Well Infrared Photo detector (QWIP) focal plane array with selectively re-grown N- GaAs interconnection plugs and demonstrated its device operation, in order to establish the technology to obtain both complex device functions and device manufacturability. MBE (Molecular Beam Epitaxy) grown QWIP MQW wafers were covered with SiON and SiNx mask films to obtain selectivity of the re-growth process. N-GaAs plugs were re-grown selectively with low-pressure MOCVD (Metal-Organic Chemical Vapor Deposition) with AsH3 and Dimethylgalliumchloride as precursors, only on the bottom surfaces of the holes for the interconnection to extract the electrodes from the underlying epilayer. Cross- sectional SEM observation revealed that the feature of the re- grown N-GaAs plugs was triangular, rather than rectangular as expected. The reason for this discrepancy is not yet clear. The electrical contact between the epilayer and re-grown N- GaAs plug was 'ohmic-like,' without any trace of interfacial barrier. The Current-Voltage characteristics of the fabricated QWIP device showed no tangible leakage current between the N- GaAs plug and device structure, indicating that electrical insulation between the N-GaAs plugs and device structure was sufficient. Fabricated devices were successfully operated as a hybrid focal plane array, indicating the selective re-growth was a promising technique to realize complex QWIP based devices.

  13. Microscopic Theory and Simulation of Quantum-Well Intersubband Absorption

    Science.gov (United States)

    Li, Jianzhong; Ning, C. Z.

    2004-01-01

    We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the non-parabolicity effect, we illuminate the underlying physics that shapes the spectra. Keywords: Intersubband transition, linear absorption, semiconductor heterostructure, InAs quantum well

  14. Detection of electromagnetic radiation using micromechanical multiple quantum wells structures

    Science.gov (United States)

    Datskos, Panagiotis G [Knoxville, TN; Rajic, Slobodan [Knoxville, TN; Datskou, Irene [Knoxville, TN

    2007-07-17

    An apparatus and method for detecting electromagnetic radiation employs a deflectable micromechanical apparatus incorporating multiple quantum wells structures. When photons strike the quantum-well structure, physical stresses are created within the sensor, similar to a "bimetallic effect." The stresses cause the sensor to bend. The extent of deflection of the sensor can be measured through any of a variety of conventional means to provide a measurement of the photons striking the sensor. A large number of such sensors can be arranged in a two-dimensional array to provide imaging capability.

  15. Superradiant modes in Fibonacci quantum wells under resonant conditions

    Science.gov (United States)

    Chang, C. H.; Tsao, C. W.; Hsueh, W. J.

    2014-11-01

    It is first presented that superradiant modes exist in Fibonacci quantum wells within the exact regions that are obtained using the gap map diagram, rather than the traditional resonant Bragg condition. The results show that three limited regions are derived from the diagram, which correspond to bandgaps with widths that differ from each other. The regions in which the superradiant modes do not occur are also defined clearly. Moreover, the proposed method can be used to determine whether superradiant modes occur in multiple quantum wells that have non-periodical arrangements, including quasiperiodic sequences and correlated disorder sequences.

  16. Neutron quantum well states in Fe/Co/Fe trilayers

    Science.gov (United States)

    Feygenson, M.; Toperverg, B. P.; Rücker, U.; Kentzinger, E.; Brückel, Th.

    2004-07-01

    We report on neutron quantum well states in Fe/Co/Fe trilayers, in which the reflection potential exhibits a quantum well for both spin states of the neutron. It is shown, that the resonance state in such a system exists and manifests itself as a dip in the reflectivity plateau below the critical angle of total reflection. The range of trilayer parameters was numerically analyzed to find optimal experimental conditions for the enhancement of the neutron wave field in the Co spacer. Enhancement of the wave field by a resonance is suggested as a way to substantially increase the off-specular scattering signal from lateral domains in buried layers of Co.

  17. Neutron quantum well states in Fe/Co/Fe trilayers

    Energy Technology Data Exchange (ETDEWEB)

    Feygenson, M.; Toperverg, B.P.; Ruecker, U.; Kentzinger, E.; Brueckel, Th

    2004-07-15

    We report on neutron quantum well states in Fe/Co/Fe trilayers, in which the reflection potential exhibits a quantum well for both spin states of the neutron. It is shown, that the resonance state in such a system exists and manifests itself as a dip in the reflectivity plateau below the critical angle of total reflection. The range of trilayer parameters was numerically analyzed to find optimal experimental conditions for the enhancement of the neutron wave field in the Co spacer. Enhancement of the wave field by a resonance is suggested as a way to substantially increase the off-specular scattering signal from lateral domains in buried layers of Co.

  18. MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性%Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE

    Institute of Scientific and Technical Information of China (English)

    王玥; 施卫; 苑进社; 贺训军; 胡辉; 姬广举

    2007-01-01

    Gallium nitride and its ternary alloys have been attracting much attention because of their unique physical and chemical properties and their great potentialities for semiconductor industrial applications, such as light emitting diodes(LEDs), laser diodes(LDs) operating from green to ultraviolet(UV), UV-detectors and microwave power devices. The primary object of this study is to investigate the influence of different thickness of Fixed-Indium-Content InGaN layer on the shift of the photoluminescence(PL) spectra and optical absorption of the whole system structure. Photoluminescence(PL) and absorption properties of the Fixed-Indium-Content InGaN/GaN heterojunction single quantum well (SQW) structures have been investigated using photoluminescence spectrum and ultraviolet-vi-sible spectrophotometer at room temperature, respectively. The films were grown by metal-organic vapor phase epitaxy (MOVPE), using GaN buffer layer on sapphire substrates. The width of InGaN layer (<3 nm) in the SQW was varied while keeping other growth parameters fixed. Sample A has an InGaN active layer of thickness 1.5 nm, and Sample B has an InGaN active layer of thickness 2.5 nm. Two samples were capped with a 25 nm GaN layer. PL measurements show that the PL peak position (432 nm in Sample A and 465 nm in Sample B) was redshifted by 33 nm, the intensity was reduced about 8%, and the full width at half maximum (FWHM) of PL spectrum increases with increasing (1 nm) of the potential well layer width. The spectra of transmission and reflection show that transmission T is very high there can be only few reflection R as no absorption R+T exceeds 100% in the near infrared ranges for the sample with InGaN layer of thickness 1.5 nm. The reasons of these results are discussed. The significance of these studies is multifold and these results provide further information of importance toward the design optimization of optoelectronic devices employing the Ⅲ-nitrides.%研究了用金属有机物气

  19. PbTe quantum dots grown by femtosecond laser ablation

    Science.gov (United States)

    Rodriguez, E.; Biggemann, D.; Moya, L.; Pippo, W. A.; Moreira, R. S.; Silva, D.; Cesar, C. L.; Barbosa, L. C.; Schrank, A.; Souza Filho, C. R.; de Oliveira, E. P.

    2008-02-01

    Laser ablation (LA) is a thin film fabrication technique which has generated a lot of interest in the past few years as one of the simplest and most versatile methods for the deposition of a wide variety of materials. With the rapid development experienced in the generation of ultra short laser pulses, new possibilities were opened for the laser ablation technique, using femtosecond lasers as ablation source. It is commonly believed that when the temporal length of the laser pulse became shorter than the several picoseconds required to couple the electronic energy to the lattice of the material, thermal effects could not play a significant role. Since the pulse width is too short for thermal effects to take place, with each laser pulse a few atom layers of material are direct vaporized away from the target surface and a better control in the quantum dots (QDs) fabrication could be achieved. In this work we report the fabrication of PbTe QDs by femtosecond laser ablation of a PbTe target in argon atmosphere. Experiments were carried out using a typical LA configuration comprising a deposition chamber and an ultra short pulsed laser (100 fs; 30 mJ) at a central wavelength of 800 nm. PbTe was chosen because its QDs absorption band can be controlled by its size to fall in the spectral window of interest for optical communications (1.3-1.5 μm). This, together with the QD high optical nonlinearity, makes this material an excellent candidate for development of photonic devices. It was investigated the influence of the number of laser pulses in the formation of the nanoparticles. The structural parameters and the surface density of the nanoparticles were studied by high resolution transmission electron microscopy (HRTEM).

  20. Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

    OpenAIRE

    Palisaitis, J.; Lundskog, A.; Forsberg, U.; Janzén, E.; Birch, J.; Hultman, L.; Persson, P. O. Å.

    2014-01-01

    The early stages of InGaN/GaN quantum wells growth for In reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated STEM–VEELS spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (>20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the...

  1. High-resolution x-ray diffraction investigations of highly mismatched II-VI quantum wells

    Science.gov (United States)

    Passow, T.; Leonardi, K.; Stockmann, A.; Selke, H.; Heinke, H.; Hommel, D.

    1999-05-01

    High-resolution x-ray diffraction (HRXRD) was used to systematically investigate CdSe and ZnTe quantum wells one to three monolayers thick sandwiched between a ZnSe buffer and cap layer grown at different substrate temperatures. For comparison high-resolution transmission electron microscopy (HRTEM) measurements were performed which were evaluated by digital analysis of lattice images. The x-ray diffraction profiles show typically two main layer peaks. Their intensity ratio depends critically on the quantum well thickness and varies only weakly with the thickness of the ZnSe layers. The total Cd or Te content determined from comparisons of experimental and simulated (004) icons/Journals/Common/omega" ALT="omega" ALIGN="TOP"/>-2icons/Journals/Common/theta" ALT="theta" ALIGN="TOP"/> scans is well confirmed by the results from digital analysis of HRTEM lattice images. For quantum well thicknesses larger than 1.5 (ZnTe) or 2.0 (CdSe) monolayers, no simulation parameters could be found to achieve good agreement between theoretical and measured diffraction profiles. This transition is more clearly visible in diffraction profiles of asymmetrical reflections. By HRTEM measurements, this could be correlated to the occurrence of stacking faults at these thicknesses. The formation of quantum islands detected by HRTEM was not reflected in the HRXRD icons/Journals/Common/omega" ALT="omega" ALIGN="TOP"/>-2icons/Journals/Common/theta" ALT="theta" ALIGN="TOP"/> scans.

  2. Tuneable frequency up-conversion based on biased asymmetric coupled quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Hu Zhenhua [Department of Physics, Science College, Wuhan University of Technology, 430063, Wuhan, Hubei (China); Huang Dexiu, E-mail: hzh267@sohu.com [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, Hubei (China)

    2011-02-01

    The behaviours of the optical nonlinear susceptibility {chi}{sup (3)} responsible for the phase-conjugate beam of frequency conversion in non-degenerate four-wave mixing (NDFWM) are studied for a biased asymmetric coupled quantum well (ACQW) structure. It is shown that the frequency up-conversion peak position determined by {chi}{sup (3)} is very sensitive to the external inverse electric field strength applied among the grown direction of quantum well but its value is insensitive to that. In other words, the frequency up-conversion peak has a large shift but its value maintains a constant when the electric field strength increases in a small bias range. The characteristics of the tuneable-frequency and the power balance of the ACQW structure may provide the high-efficient wavelength conversion in the optical communication system.

  3. Pressure- and temperature-driven phase transitions in HgTe quantum wells

    Science.gov (United States)

    Krishtopenko, S. S.; Yahniuk, I.; But, D. B.; Gavrilenko, V. I.; Knap, W.; Teppe, F.

    2016-12-01

    We present theoretical investigations of pressure- and temperature-driven phase transitions in HgTe quantum wells grown on a CdTe buffer. Using the eight-band k .p Hamiltonian we calculate evolution of energy-band structure at different quantum well widths with hydrostatic pressure up to 20 kbars and temperature ranging up to 300 K. In particular, we show that, in addition to temperature, tuning of hydrostatic pressure allows us to drive transitions between semimetal, band insulator, and topological insulator phases. Our realistic band-structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by nonlocal overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.

  4. Spatial Light Modulators with Arbitrary Quantum Wells Profiles

    Science.gov (United States)

    1993-09-27

    SUPPLEMENTARY NOTES A 12a. DISTRIBUTION/AVAILABILITY STATEMENT . 12b. DISTRIBUTION CODE Approved for public release; distribution unlimited 13. ABSTRACT...2.1O.References ............................................................ 61 C. Publications in technical journals...Livescu, J. E. Cunningham, and W. Y. Jan , "Quantum Well Czrrier Sweep Out: Relatino to Electroabsorption and Exciton Saturation, "JEEE J.. Qunaturn

  5. Frictional drag between quantum wells mediated by phonon exchange

    DEFF Research Database (Denmark)

    Bønsager, M.C.; Flensberg, Karsten; Hu, Ben Yu-Kuang;

    1998-01-01

    lattice imperfections or electronic excitations is accounted for. In the case of GaAs quantum wells, we find that for a phonon mean free path l(ph) smaller than a critical value, imperfection scattering dominates and the drag rate varies as ln(l(ph)/d) over many orders of magnitude of the layer separation...

  6. Multiple Quantum Wells for P T -Symmetric Phononic Crystals

    Science.gov (United States)

    Poshakinskiy, A. V.; Poddubny, A. N.; Fainstein, A.

    2016-11-01

    We demonstrate that the parity-time symmetry for sound is realized in laser-pumped multiple-quantum-well structures. Breaking of the parity-time symmetry for the phonons with wave vectors corresponding to the Bragg condition makes the structure a highly selective acoustic wave amplifier. Single-mode distributed feedback phonon lasing is predicted for structures with realistic parameters.

  7. Electrooptical modulation in multiple quantum well hetero nipi waveguides

    DEFF Research Database (Denmark)

    Thirstrup, C.; Robson, P. N.; Li Kam Wa, P.

    1994-01-01

    An optical intensity modulator based on multiple quantum well hetero (MQW-H) nipi waveguides is reported. In the low optical power regime (~10-5 W), the modulator exhibits an extinction ratio in excess of 100:1 at low drive voltage (4 V) and 5-B attenuation. Modelling and experimental results of ...

  8. Absorption recovery in strongly saturated quantum-well electroabsorption modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune; Romstad, F.; Mørk, Jesper

    2003-01-01

    We observe experimentally that a quantum-well electroabsorption modulator, when strongly saturated by a highly energetic optical pulse, may exhibit an absorption recovery time much longer than for excitation with a low-energy pulse. Using a comprehensive drift-diffusion. type model, we are able...

  9. Bose Condensation of Interwell Excitons in Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Timofeev, V. B.; Ni, P. A.

    2002-01-01

    The luminescence of interwell excitons in double quantum wells GaAs/AlGaAs (n–i–n heterostructures) with large-scale fluctuations of random potential in the heteroboundary planes was studied. The properties of excitons whose photoexcited electron and hole are spatially separated in the neighboring...

  10. Design and Analysis of a Quantum Well Light Emitting Triode.

    Science.gov (United States)

    Rajagopalan, Bharath

    1992-01-01

    We present, for the first time, the design and analysis of a novel, quantum well light emitting triode (QWLET), based on a bipolar junction transistor with a quantum well in the base. Modulation of the collector -base voltage controls the radiation emission from the quantum well by sweeping the space-charge region across the well. Detailed analysis is provided for an npn-Al_{.35 }Ga_{.65}As transistor with an undoped GaAs quantum well. Calculations indicate that modulation rates in excess of 1 GHz are possible. The switching-off process is limited by thermionic emission of majority carriers out of the well, whereas the turn -on is controlled by the recombination lifetime in the well. Our calculations reveal that the thermionic emission lifetime of these carriers is ~0.1 ns at an applied field of 5 times 10 ^4 V/cm, while the radiative lifetime is approximately 1-2 ns for carrier densities in excess of 10^{12} cm ^{-2} in the well. For material systems, or choice of parameters, where thermionic emission is insignificant, field induced tunneling of carriers out of the well is considered as a quenching mechanism. However, the tunneling lifetime is ~3.1 mus at a field of 1 times 10^5 V/cm, and therefore we propose a novel scheme to reduce this lifetime to ~3.3 ns through impurity assisted tunneling. Our calculated results also include a capture cross-section of 10^{-14} cm ^2 for carriers into the well, a B coefficient for radiative recombination of 2.4 times 10^{-10} cm ^3/s, and optical power generation of 0.15 muW per μm of length per mA of drive current and peaked at 855 nm. The voltage amplitude needed to modulate the radiation is on the order of 1 to 2 volts.

  11. Quantum anomalous Hall effect in magnetically doped InAs/GaSb quantum wells.

    Science.gov (United States)

    Wang, Qing-Ze; Liu, Xin; Zhang, Hai-Jun; Samarth, Nitin; Zhang, Shou-Cheng; Liu, Chao-Xing

    2014-10-03

    The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr-doped (Bi,Sb)(2)Te(3) at a low temperature (∼ 30 mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with magnetically doped InAs/GaSb type-II quantum wells. Based on a four-band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation of Hall conductance. The parameter regime for the quantum anomalous Hall phase is identified based on the eight-band Kane model. The high sample quality and strong exchange coupling make magnetically doped InAs/GaSb quantum wells good candidates for realizing the quantum anomalous Hall insulator at a high temperature.

  12. Surface photovoltage spectroscopy of quantum wells and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Bachrach-Ashkenasy, N.; Kronik, L.; Shapira, Y. [Department of Physical Electronics, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel); Rosenwaks, Y.; Hanna, M.C. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Leibovitch, M.; Ram, P. [Physics Department, Brooklyn College of the City University of New York, Brooklyn, New York 11210 (United States)

    1996-02-01

    Surface photovoltage spectroscopy (SPS) has been employed to monitor optical transitions in quantum well and superlattice structures at room temperature. Excellent agreement is found between theoretical predictions of heavy hole and electron energy level positions and the observed transitions. The results show that using this technique, the complete band diagram of the quantum structure may be constructed. SPS emerges as a powerful tool capable of monitoring optical transitions above the lowest one in a simple to interpret, contactless, and nondestructive way. {copyright} {ital 1996 American Institute of Physics.}

  13. Enhanced UV luminescence from InAlN quantum well structures using two temperature growth

    Energy Technology Data Exchange (ETDEWEB)

    Zubialevich, Vitaly Z., E-mail: vitaly.zubialevich@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); Sadler, Thomas C.; Dinh, Duc V. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); Alam, Shahab N.; Li, Haoning; Pampili, Pietro [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland); Parbrook, Peter J., E-mail: peter.parbrook@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland)

    2014-11-15

    InAlN/AlGaN multiple quantum wells (MQWs) emitting between 300 and 350 nm have been prepared by metalorganic chemical vapor deposition on planar AlN templates. To obtain strong room temperature luminescence from InAlN QWs a two temperature approach was required. The intensity decayed weakly as the temperature was increased to 300 K, with ratios I{sub PL}(300 K)/I{sub PL}(T){sub max} up to 70%. This high apparent internal quantum efficiency is attributed to the exceptionally strong carrier localization in this material, which is also manifested by a high Stokes shift (0.52 eV) of the luminescence. Based on these results InAlN is proposed as a robust alternative to AlGaN for ultraviolet emitting devices. - Highlights: • InAlN quantum wells with AlGaN barriers emitting in near UV successfully grown using quasi-2T approach. • 1 nm AlGaN capping of InAlN quantum wells used to avoid In desorption during temperature ramp to barrier growth conditions. • Strong, thermally resilient luminescence obtained as a result of growth optimization. • Promise of InAlN as an alternative active region for UV emitters demonstrated.

  14. GaAs/AlGaAs quantum well infrared photodetector with low noise

    Institute of Scientific and Technical Information of China (English)

    DENG Jun; WANG Bin; HAN Jun; LI Jian-jun; SHEN Guang-di

    2005-01-01

    A novel kind of multi-quantum well infrared photodetector(QWIP) is presented.In the new structure device,a p-type contact layer has been grown on the top of the conventional structure of QWIP,then a small tunneling current is instead of the large compensatory current,which made the device low dark current and low noise characteristics.The measured result of dark current is consistent with the calculated result,and the noise of the new structure QWIP is decreased to one third of the conventional QWIP.

  15. Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells

    Science.gov (United States)

    Park, Il-Kyu; Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu-Young; Lim, Jae-Hong; Park, Seong-Ju

    2008-03-01

    A phosphor-free white light-emitting diode (LED) was fabricated with laterally distributed blue and green InGaN /GaN multiple quantum wells (MQWs) grown by a selective area growth method. Photoluminescence and electroluminescence (EL) spectra of the LED showed emission peaks corresponding to the individual blue and green MQWs. The integrated EL intensity ratio of green to blue emission varied from 2.5 to 6.5 with the injection current below 300mA, but remained constant at high injection currents above 300mA. The stability of the emission color at high currents is attributed to parallel carrier injection into both MQWs.

  16. Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Shiraga, Masahiro; Nakai, Yuko; Hirashima, Tomohiko; Kittaka, Akinobu; Ebisu, Mari; Tsurumachi, Noriaki; Nakanishi, Shunsuke; Miyagawa, Hayato; Itoh, Hiroshi; Koshiba, Shyun [Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu, Kagawa 761-0396 (Japan); Takahashi, Naoshi [Faculty of Education, Kagawa University, 1-1 Saiwai-cho, Takamatsu, Kagawa 760-8521 (Japan); Noda, Takeshi [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohmori, Masato [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Akiyama, Hidefumi [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)

    2011-02-15

    We have evaluated the effects of Mg doping on the optical and the electrical property of GaNAs/GaAs multiple quantum wells (MQWs) with high N composition (11{proportional_to}17%) grown by radio-frequency molecular beam epitaxy (RF-MBE). The results of Van der Pauw measurements revealed strong n-type conduction by Mg doping. The blue-shifts and enhanced intensities in photoluminescence by Mg doping suggest the type-II band structure of GaNAs/GaAs MQWs and carrier generation by interstitial Mg atoms. (copyright 2011 EILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Fermi surface and quantum well states of V(110) films on W(110)

    Energy Technology Data Exchange (ETDEWEB)

    Krupin, Oleg [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Rotenberg, Eli [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Kevan, S D [Department of Physics, University of Oregon, Eugene, OR 97403 (United States)

    2007-09-05

    Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface.

  18. Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

    Science.gov (United States)

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P.; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, J.-P.; Beaumont, B.; Shiktorov, P.; Starikov, E.; Gruzinskis, V.; Korotyeyev, V. V.; Kochelap, V. A.

    2011-08-01

    We report on measurements of radiation transmission in the 0.220-0.325 THz frequency range through GaN quantum wells grown on sapphire substrates at nitrogen and room temperatures. Significant enhancement of the transmitted beam intensity with applied voltage is found at nitrogen temperature. This effect is explained by changes in the mobility of two-dimensional electrons under electric bias. We have clarified which physical mechanism modifies the electron mobility and we suggest that the effect of voltage-controlled sub-terahertz transmission can be used for the development of electro-optic modulators operating in the sub-THz frequency range.

  19. High contrast ratio, high uniformity multiple quantum well spatial light modulators

    Energy Technology Data Exchange (ETDEWEB)

    Huang Yuyang; Yang Chen; Yang Hui [Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Liu, H C; Cui Guoxin; Bian Lifeng; Zhang Yaohui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Wasilewski, Z R; Buchanan, M; Laframboise, S R, E-mail: yhzhang2006@sinano.ac.c [Institute for Microstructural Sciences, National Research Council, Ottawa K1A 0R6 (Canada)

    2010-03-15

    Our latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented. The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR. (semiconductor integrated circuits)

  20. Electron transport in coupled double quantum wells and wires

    Energy Technology Data Exchange (ETDEWEB)

    Harff, N.E.; Simmons, J.A.; Lyo, S.K. [and others

    1997-04-01

    Due to inter-quantum well tunneling, coupled double quantum wells (DQWs) contain an extra degree of electronic freedom in the growth direction, giving rise to new transport phenomena not found in single electron layers. This report describes work done on coupled DQWs subject to inplane magnetic fields B{sub {parallel}}, and is based on the lead author`s doctoral thesis, successfully defended at Oregon State University on March 4, 1997. First, the conductance of closely coupled DQWs in B{sub {parallel}} is studied. B{sub {parallel}}-induced distortions in the dispersion, the density of states, and the Fermi surface are described both theoretically and experimentally, with particular attention paid to the dispersion anticrossing and resulting partial energy gap. Measurements of giant distortions in the effective mass are found to agree with theoretical calculations. Second, the Landau level spectra of coupled DQWs in tilted magnetic fields is studied. The magnetoresistance oscillations show complex beating as Landau levels from the two Fermi surface components cross the Fermi level. A third set of oscillations resulting from magnetic breakdown is observed. A semiclassical calculation of the Landau level spectra is then performed, and shown to agree exceptionally well with the data. Finally, quantum wires and quantum point contacts formed in DQW structures are investigated. Anticrossings of the one-dimensional DQW dispersion curves are predicted to have interesting transport effects in these devices. Difficulties in sample fabrication have to date prevented experimental verification. However, recently developed techniques to overcome these difficulties are described.

  1. Binding energy of donors in symmetric triangular quantum wells

    Institute of Scientific and Technical Information of China (English)

    ZHANG Ji-ye; LIANG Xi-xia

    2005-01-01

    Hydrogen-like donor impurity states in symmetric triangular quantum wells are investigated by using a variational method.Both the effects of the variable effective mass of electrons and the spatially dependent dielectric constant are considered in the calculation.The numerical results show that the binding energy depends on not only the effective mass and dielectric constant but also the spatial distribution of electron probability density.The binding energies of donor states get the maximums at the well-center.The results are also compared with those obtained in parabolic and square wells.It is seen that the triangular well support the highest binding energies for donor states.

  2. Electro-physical characteristics of MIS structures with HgTe- based single quantum wells for optoelectronics devices

    Science.gov (United States)

    Dzyadukh, S.; Nesmelov, S.; Voitsekhovskii, A.; Gorn, D.

    2016-08-01

    The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) structures based on Hg1-xCdxTe grown by molecular-beam epitaxy (MBE) method including single HgCdTe/HgTe/HgCdTe quantum wells (QW) in the surface layer. The thickness of a quantum well was 5.6 nm, and the composition of barrier layers with the thickness of 35 nm was close to 0.65. Measurements were conducted in the range of temperatures from 8 to 200 K. It is shown that for structure with quantum well based on HgTe capacitance and conductance oscillations in the strong inversion are observed. Also it is assumed these oscillations are related with the recharging of quantum levels in HgTe.

  3. Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

    Science.gov (United States)

    Chen, Y.; Maharjan, N.; Liu, Z.; Nakarmi, M. L.; Chaldyshev, V. V.; Kundelev, E. V.; Poddubny, A. N.; Vasil'ev, A. P.; Yagovkina, M. A.; Shakya, N. M.

    2017-03-01

    An AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure was designed to match the optical Bragg resonance with the exciton-polariton resonance at the second quantum state in the GaAs quantum wells. The sample structure with 60 periods of AlGaAs/GaAs quantum wells was grown on a semi-insulating GaAs substrate by molecular beam epitaxy. Angle- and temperature-dependent photoluminescence, optical reflectance, and electro-reflectance spectroscopies were employed to study the resonant optical properties of the Bragg structure. Broad and enhanced optical and electro-reflectance features were observed when the Bragg resonance was tuned to the second quantum state of the GaAs quantum well excitons, manifesting a strong light-matter interaction. From the electro-optical experiments, we found the electro-reflectance features related to the transitions of x(e2-hh2) and x(e2-hh1) excitons. The excitonic transition x(e2-hh1), which is prohibited at zero electric field, was allowed by a DC bias due to the brake of symmetry and increased overlap of the electron and hole wave functions caused by the electric field. By tuning the Bragg resonance frequency, we have observed the electro-reflectance feature related to the second quantum state up to room temperature, which evidences a robust light-matter interaction in the resonant Bragg structure.

  4. A real-time spectrum acquisition system design based on quantum dots-quantum well detector

    Science.gov (United States)

    Zhang, S. H.; Guo, F. M.

    2016-01-01

    In this paper, we studied the structure characteristics of quantum dots-quantum well photodetector with response wavelength range from 400 nm to 1000 nm. It has the characteristics of high sensitivity, low dark current and the high conductance gain. According to the properties of the quantum dots-quantum well photodetectors, we designed a new type of capacitive transimpedence amplifier (CTIA) readout circuit structure with the advantages of adjustable gain, wide bandwidth and high driving ability. We have implemented the chip packaging between CTIA-CDS structure readout circuit and quantum dots detector and tested the readout response characteristics. According to the timing signals requirements of our readout circuit, we designed a real-time spectral data acquisition system based on FPGA and ARM. Parallel processing mode of programmable devices makes the system has high sensitivity and high transmission rate. In addition, we realized blind pixel compensation and smoothing filter algorithm processing to the real time spectrum data by using C++. Through the fluorescence spectrum measurement of carbon quantum dots and the signal acquisition system and computer software system to realize the collection of the spectrum signal processing and analysis, we verified the excellent characteristics of detector. It meets the design requirements of quantum dot spectrum acquisition system with the characteristics of short integration time, real-time and portability.

  5. Characteristics of surface plasmon coupled quantum well infrared photodetectors

    Science.gov (United States)

    Hsu, Wei-Cheng; Ling, Hong-Shi; Wang, Shiang-Yu; Lee, Chien-Ping

    2017-06-01

    Quantum Well Infrared Photodetectors (QWIPs) with different structures were characterized for the study of surface plasmon wave coupling. Detailed comparisons between surface plasmon coupled and etched grating coupled devices were investigated. A bias dependence for the enhancement of the responsivity of surface plasmon coupled devices was found, especially for the samples with non-uniform quantum wells. The non-uniform QWIPs with surface plasmon coupling showed an asymmetric enhancement with respect to the bias directions. Stronger enhancements were shown under the biases when a higher effective electric field region is close to the collector. The change of the photocarrier escape probability due to the narrow coupling bandwidth of the surface plasmon wave is attributed to this unexpected bias dependence.

  6. Storage and retrieval of light pulse in coupled quantum wells

    Directory of Open Access Journals (Sweden)

    Jibing Liu

    2016-03-01

    Full Text Available In this paper, we propose an effective scheme to create a frequency entangled states based on bound-to-bound inter-subband transitions in an asymmetric three-coupled quantum well structure. A four-subband cascade configuration quantum well structure is illuminated with a pulsed probe field and two continuous wave control laser fields to generate a mixing field. By properly adjusting the frequency detunings and the intensity of coupling fields, the conversion efficiency can reach 100%. A maximum entangled state can be achieved by selecting a proper length of the sample. We also numerically investigate the propagation dynamics of the probe pulse and mixing pulse, the results show that two frequency components are able to exchange energy through a four-wave mixing process. Moreover, by considering special coupling fields, the storage and retrieval of the probe pulse is also numerically simulated.

  7. Quantum-well thickness dependence of spin polarization of excitons

    Directory of Open Access Journals (Sweden)

    M. Idrish Miah

    2011-07-01

    Full Text Available The optical orientation of exciton spins in semiconductor quantum wells (SQWs was investigated by observing the circular polarization of the photoluminescence (PL. The left/right circularly polarized PL in SQWs was measured. It was found that there is a difference between the two different polarization conditions, which is caused by spin-dependent phase-space filling. The PL polarization was estimated from the signals of the left and right circularly polarized PL and was found to depend on the well thickness of SQWs as well as on the sample temperature. The influence of an electric field on the PL polarization was studied.

  8. Magnetization dynamics in (Cd,Mn)Te quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Goryca, M.; Nawrocki, M. [Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw (Poland); Ferrand, D.; Tatarenko, S. [Joined group ' ' Nanophysique et semiconducteurs' ' , CNRS/CEA/Universite Joseph Fourier-Grenoble, Laboratoire de Spectrometrie Physique, BP 87, 38402 Saint Martin d' Heres cedex (France); Kossacki, P.; Pacuski, W.; Maslana, W. [Institute of Experimental Physics, Warsaw University, Hoza 69, 00-681 Warsaw (Poland); Joined group ' ' Nanophysique et semiconducteurs' ' , CNRS/CEA/Universite Joseph Fourier-Grenoble, Laboratoire de Spectrometrie Physique, BP 87, 38402 Saint Martin d' Heres cedex (France); Cibert, J. [Laboratoire Louis Neel, CNRS, BP166, 38042 Grenoble cedex 9 (France)

    2006-03-15

    The relaxation of the magnetization change induced by a short pulse of magnetic field in p-doped (Cd,Mn)Te quantum wells is determined from the giant Zeeman shift of the photoluminescence line. The characteristic times change by three orders of magnitude upon application of a static magnetic field. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  10. Density of states in an electrically biased quantum well

    Indian Academy of Sciences (India)

    A Khan; S Sinha; P Panchadhyayee

    2007-10-01

    Density of states in a quantum well has been studied in the presence of an electric field applied perpendicular to the growth direction. We have shown that an extra quantization is introduced to the motion of the electron due to the discrete energy levels known as Wannier–Stark ladder states and the nature of density of electronic states changes from quasi two-dimensional to quasi one-dimensional.

  11. Transient Intersubband Optical Absorption in Double Quantum Well Structure

    Institute of Scientific and Technical Information of China (English)

    WU Bin-He

    2005-01-01

    The microscopic equations of motion including many-body effects are derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light. Based on the selfconsistent field theory, the transient probe absorption coefficient is calculated. These calculations are beyond the previous steady-state assumption. Transient probe absorption spectra are calculated under different pumping intensity and various pump probe delay.

  12. SWKB Quantization Rules for Bound States in Quantum Wells

    CERN Document Server

    Sinha, A K; Sinha, Anjana; Roychoudhury, Rajkumar

    2000-01-01

    In a recent paper by Gomes and Adhikari (J.Phys B30 5987(1997)) a matrix formulation of the Bohr-Sommerfield quantization rule has been applied to the study of bound states in one dimension quantum wells. Here we study these potentials in the frame work of supersymmetric WKB (SWKB) quantization approximation and find that SWKB quantization rule is superior to the modified Bohr-Sommerfield or WKB rules as it exactly reproduces the eigenenergies.

  13. Hole transport simulations in SiGe cascade quantum wells

    Science.gov (United States)

    Ikonić, Z.; Harrison, P.; Kelsall, R. W.

    2004-03-01

    Hole transport in p-Si/SiGe quantum well cascade structures has been analyzed using a rate equation method with thermal balancing (self-consistent energy balance method). The carrier and energy relaxation due to alloy disorder, acoustic and optical phonon scattering are included. The model includes the in-plane k-space anisotropy. The results are compared to those obtained from Monte Carlo simulations and from the basic particle rate equation method.

  14. Photonic integrated circuits based on quantum well intermixing techniques

    OpenAIRE

    Hou, Lianping; Marsh, John H.

    2016-01-01

    The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the bandgap in selected areas of an integrated device post-growth. To verify the QWI process, we have fab...

  15. Optical Detection Properties of Silicon-Germanium Quantum Well Structures

    Science.gov (United States)

    2011-07-28

    discrete index N labels energies that correspond to bound hole states in the growth direction. The EFA proceeds by first determining the bulk...dashed line designated by the label, HHl-cont, represents the EFA zone center energy difference between the ground state and the edge of the quantum well...points out the absolute necessity of performing the EFA theoretical calculations. Without them the correct number of bound states would be 5-32 0.25

  16. Photonic Integrated Circuits Based on Quantum well Intermixing Techniques

    OpenAIRE

    Hou, Lianping; John H. Marsh

    2016-01-01

    The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the bandgap in selected areas of an integrated device post-growth. To verify the QWI process, we have fab...

  17. Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li, S.; Zhou, X.; Li, M.; Kong, X.; Mi, J.; Wang, M.; Wang, W.; Pan, J., E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

    2016-01-11

    Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.

  18. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  19. Tantalum films with well-controlled roughness grown by oblique incidence deposition

    Science.gov (United States)

    Rechendorff, K.; Hovgaard, M. B.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2005-08-01

    We have investigated how tantalum films with well-controlled surface roughness can be grown by e-gun evaporation with oblique angle of incidence between the evaporation flux and the surface normal. Due to a more pronounced shadowing effect the root-mean-square roughness increases from about 2 to 33 nm as grazing incidence is approached. The exponent, characterizing the scaling of the root-mean-square roughness with length scale (α), varies from 0.75 to 0.93, and a clear correlation is found between the angle of incidence and root-mean-square roughness.

  20. All-optically induced ultrafast currents in GaAs quantum wells: Excitonic effects and dependence on quantum well width

    Energy Technology Data Exchange (ETDEWEB)

    Priyadarshi, Shekhar; Maria Racu, Ana; Pierz, Klaus; Siegner, Uwe; Bieler, Mark [Physikalisch-Technische Bundesanstalt, Braunschweig (Germany); Dawson, Philip [School of Physics and Astronomy, University of Manchester (United Kingdom)

    2009-07-01

    We have studied the influence of excitonic effects on ultrafast current transients that are induced in unbiased GaAs quantum wells by all-optical excitation. The ultrafast current transients result from second-order nonlinear optical effects and were detected by measuring the simultaneously emitted THz radiation. Experiments were performed on (110)-oriented GaAs/AlGaAs quantum well samples with different well widths and with 150 fs excitation laser pulses at room temperature. By studying the dependence of the current amplitude and phase on excitation photon energy in the different samples, we find that Coulomb effects and the quantum well width substantially affect the properties of these ultrafast currents. This becomes most prominently visible when exciting light-hole exciton transitions. The phase data shows that for excitation of light-hole-type transitions a current reversal occurs as compared to excitation of heavy-hole-type transitions. The amplitude dependence of the current transients on excitation photon energy is influenced by the reversed current contribution from heavy- and light-hole-type transitions, the complex bandstructure, and non-instantaneous effects contributing to the current dynamics.

  1. Symbolic Solution for Generalized Quantum Cylindrical Wells using Computer Algebra

    CERN Document Server

    Villegas, Edward Yesid

    2012-01-01

    This paper present how to solve the problem of cylindrical quantum wells with potential energy different from zero and with singularity of the energy on the axis of the cylinder. The solution to the problem was obtained using methods of computer algebra. The results depend of Bessel and Kummer functions. This paper present energy levels and wave functions in some of the cases with an exactly form and in other cases with an approximated form, this form depended on the possibility of integrating the special functions and calculating the zeros of these functions. Here we can see the power of the method in the applications concerning complex problems of quantum mechanics, and the possibility of being able to apply this method in order to solve other problems in science and also in engineering.

  2. Enhanced luminescence of near-surface quantum wells passivated in situ by InP

    Energy Technology Data Exchange (ETDEWEB)

    Lipsanen, H.; Sopanen, M.; Taskinen, M.; Tulkki, J. [Helsinki Univ. of Technology, Espoo (Finland). Optoelectronics Lab.; Ahopelto, J. [VTT Electronics, Espoo (Finland)

    1996-12-31

    The authors have studied the optical properties of MOVPE grown Al{sub x}Ga{sub 1{minus}x}As/GaAs structures passivated by in situ deposition of InP on the surface. One monolayer of InP was used for the passivation. The surface recombination was studied by photoluminescence measurements of near-surface Al{sub 0.22}Ga{sub 0.78}As/GaAs quantum wells. The luminescence intensity of the passivated samples increased by about five orders of magnitude for quantum wells located at less than 5 nm from the surface as compared to unpassivated samples. Furthermore, the authors observed a blueshift of 15 meV for a passivated surface quantum well. The effect of the thin InP layer on the Fermi level pinning on the surface was studied by photoreflectance of a surface-i-n{sup +} sample. The pinning position was reduced by 0.3 eV from the mid-bandgap value.

  3. Eigenstate localization in an asymmetric coupled quantum well pair

    DEFF Research Database (Denmark)

    Mialitsin, Aleksej; Schmult, Stefan; Solov'yov, Ilia;

    2012-01-01

    exclusively either in the wide or the narrow parts of the well pair. The energy of the narrow-well localized state determines the minimal excitation energy for optically pumped charge carriers separation. In a previously used design [Guliamov et al., PRB 64 035314 (2001)] this narrow well transition energy......Optical pumping of a type-I/type-II coupled asymmetric quantum well pair induces a spatially separated two dimensional charge carriers plasma in the well’s wide and narrow parts. Treating the two coupled wells as a single system we find that the eigenstate probability distribution localizes...... was measured to correspond to a wavelength of 646 nm. We propose modifications to the design suggested earlier with the purpose of pushing up the energy required for the optical pumping of the two-dimensional plasma into the green and blue regions of the visible spectrum....

  4. Electric field dependent Electroreflectance of GaAs/AlGaAs multiple quantum well Bragg structure at second quantum state

    Science.gov (United States)

    Nakarmi, Mim; Shakya, Naresh; Chaldyshev, Vladimir

    Electroreflectance Spectroscopy was employed to study the effect of electric field on the excitonic transitions in a GaAs/AlGaAs multiple quantum well (MQW) Bragg structure. The sample used in this experiment consists of 60 periods of quantum well structures with GaAs well layer (~13 nm) and AlGaAs barrier layer (~94 nm), grown by molecular beam expitaxy on a semi-insulating GaAs substrate. The sample structure was designed to coincide the Bragg resonance peak with the x(e2-hh2) exciton transitions. We observed a significant enhancement of excitonic feature around the x(e2-hh2) exciton transition due to the double resonance along with the sharp features of x(e1-hh1) and x(e1-lh1) ground state exciton transitions by tuning the angle of incidence of the light. We will present the results on electric field dependent electroreflectance measurements of this structure and discuss the effect of electric field on the first and second energy states.

  5. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

    Science.gov (United States)

    Jiang, Qi; Tang, Mingchu; Chen, Siming; Wu, Jiang; Seeds, Alwyn; Liu, Huiyun

    2014-09-22

    We report the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on a Ge substrate by molecular beam epitaxy. The QD SLD exhibits a 3 dB emission bandwidth of ~60 nm centered at 1252 nm with output power of 27 mW at room temperature. The 3 dB bandwidth is very stable over the temperature range from 20 °C to 100 °C, which highlights the potential for integration with high performance ICs.

  6. Multi-Well Potentials in Quantum Mechanics and Stochastic Processes

    Directory of Open Access Journals (Sweden)

    Victor P. Berezovoj

    2010-12-01

    Full Text Available Using the formalism of extended N=4 supersymmetric quantum mechanics we consider the procedure of the construction of multi-well potentials. We demonstrate the form-invariance of Hamiltonians entering the supermultiplet, using the presented relation for integrals, which contain fundamental solutions. The possibility of partial N=4 supersymmetry breaking is determined. We also obtain exact forms of multi-well potentials, both symmetric and asymmetric, using the Hamiltonian of harmonic oscillator as initial. The modification of the shape of potentials due to variation of parameters is also discussed, as well as application of the obtained results to the study of tunneling processes. We consider the case of exact, as well as partially broken N=4 supersymmetry. The distinctive feature of obtained probability densities and potentials is a parametric freedom, which allows to substantially modify their shape. We obtain the expressions for probability densities under the generalization of the Ornstein-Uhlenbeck process.

  7. Theoretical Studies of the Optoelectronic Properties of Semiconductor Quantum Wells.

    Science.gov (United States)

    Chao, Calvin Yi-Ping

    The valence-band structure of a semiconductor quantum well is calculated based on the multiband effective -mass theory. A unitary transformation is found to diagonalize the six-by-six Luttinger-Kohn Hamiltonian into two three -by-three blocks, making the computation more efficient. With this new formulation, the effect of strain on the band structure is studied systematically for both the compressional and tensile strain. The importance of the coupling between the heavy-hole, light-hole bands and the spin-orbit split -off bands is especially pointed out. The resonant tunneling of holes through a double -barrier structure is investigated using a transfer-matrix technique. It is shown that the strong mixing between the heavy holes and the light holes results in a totally different I-V characteristic from that predicted previously by the parabolic-band model. The exciton equation in momentum space is solved by using a modified Gaussian quadrature method. The exact solutions for a pure-two-dimensional exciton are derived by means of the Mehler-Fock transform, and the accuracy of the quadrature method is checked by comparing the numerical solutions against the exact solutions. A complete theory for quantum-well excitons is developed taking into account the effects of the valence -band mixing and the intersubband Coulomb interaction. Optical absorption spectra are calculated and compared to experimental data. The comparison demonstrates that the theory explains very well the quantum-confined Stark effect, the polarization selection rule, the coupling between the interwell and intrawell excitons in a multiwell structure, and the anticrossing between the ground state of a light-hole exciton and the excited state of a heavy-hole exciton observed experimentally.

  8. Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well

    NARCIS (Netherlands)

    Yi, W.; Kiselev, A.A.; Thorp, J.; Noah, R.; Nguyen, B.M.; Bui, S.; Rajavel, R.D.; Hussain, T.; Gyure, M.F.; Kratz, P.; Qian, Q.; Manfra, M.J.; Pribiag, V.S.; Kouwenhoven, L.P.; Marcus, C.M.; Sokolich, M.

    2015-01-01

    Gate-tunable high-mobility InSb/In1−xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomi

  9. Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S.M. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden)]. E-mail: shumin.wang@mc2.chalmers.se; Tangring, I. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden); Gu, Q.F. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden); Sadeghi, M. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden); Larsson, A. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goeteborg (Sweden); Wang, X.D. [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083 Beijing (China); Ma, C.H. [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083 Beijing (China); Buyanova, I.A. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden); Chen, W.M. [Department of Physics and Measurement Technology, Linkoeping University, 58183 Linkoeping (Sweden)

    2007-03-26

    Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 {mu}m, smooth surface with an average roughness below 2 nm and good rectifying I-V characteristics. Dark line defects are found in the QW. Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed.

  10. An Emphasis of Electron Energy Calculation in Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    GAOShao-Wen; CAOJun-Cheng; FENGSong-Lin

    2004-01-01

    We investigate various methods for the calculation of the electron energy in semiconductor quantum wells and focus on a matrix algorithm method. The results show better fitness of the factor -h2/2 э/эz 1/m*(z) э/эz than that of -h2/2 1/m*(z) э2/эz2 in the first part of the Schroedinger equation. The effect of nonparabolicity in the conduction band is also discussed.

  11. Ordered Dissipative Structures in Exciton Systems in Semiconductor Quantum Wells

    Directory of Open Access Journals (Sweden)

    Andrey A. Chernyuk

    2006-02-01

    Full Text Available A phenomenological theory of exciton condensation in conditions of inhomogeneous excitation is proposed. The theory is applied to the study of the development of an exciton luminescence ring and the ring fragmentation at macroscopical distances from the central excitation spot in coupled quantum wells. The transition between the fragmented and the continuous ring is considered. With assumption of a defect in the structure, a possibility of a localized island of the condensed phase in a fixed position is shown. Exciton density distribution is also analyzed in the case of two spatially separated spots of the laser excitation.

  12. Quantum-well-driven magnetism in thin films

    DEFF Research Database (Denmark)

    Mirbt, S.; Johansson, B.; Skriver, Hans Lomholt

    1996-01-01

    We have performed local spin-density calculations for an fee (100) Ag substrate covered by 1 to 16 monolayers (ML) of Pd. We find that thin films of Pd are magnetic with a moment of the order of 0.3 mu(B) except for films of 1-2 ML and 5-7 ML where magnetism is completely suppressed. We present...... a physically transparent explanation of this behavior in terms of the Stoner picture and magnetic quantum-well states....

  13. Strong photoluminescence emission from resonant Fibonacci quantum wells.

    Science.gov (United States)

    Chang, C H; Chen, C H; Hsueh, W J

    2013-06-17

    Strong photoluminescence (PL) emission from a resonant Fibonacci quantum well (FQW) is demonstrated. The maximum PL intensity in the FQW is significantly stronger than that in a periodic QW under the Bragg or anti-Bragg conditions. Moreover, the peaks of the squared electric field in the FQW are located very near each of the QWs. The optimal PL spectrum in the FQW has an asymmetrical form rather than the symmetrical one in the periodic case. The maximum PL intensity and the corresponding thickness filling factor in the FQW become greater with increasing generation order.

  14. Relative Intensity Noise in the Single Quantum Well Diode

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Based on the mathematical model of quantum well laser diode(QW-LDs) developed, the paper presents a relative intensity noise(RIN) model, which employs Gaussian form random noise with its average being to zero. It can be straightforwardly used to describe the effect of the noise on the performance of QW-LDs. The RIN becomes notable in the frequency range of interests and therefore affects the device modulation property. The results are in good agreement of the published data. The RIN model proposed and the results can be used for purpose of device technique improvement and performance simulation of optical communication systems and networks.

  15. Reliability assessment of multiple quantum well avalanche photodiodes

    Science.gov (United States)

    Yun, Ilgu; Menkara, Hicham M.; Wang, Yang; Oguzman, Isamil H.; Kolnik, Jan; Brennan, Kevin F.; May, Gray S.; Wagner, Brent K.; Summers, Christopher J.

    1995-01-01

    The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

  16. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  17. Thermopower enhancement in quantum wells with the Rashba effect

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Lihua [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Materials Science and Engineering Department, University of Washington, Seattle, Washington 98195 (United States); University of Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jiong; Wang, Shanyu; Wei, Ping; Yang, Jihui, E-mail: jihuiy@uw.edu, E-mail: wqzhang@mail.sic.ac.cn [Materials Science and Engineering Department, University of Washington, Seattle, Washington 98195 (United States); Zhang, Wenqing, E-mail: jihuiy@uw.edu, E-mail: wqzhang@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Materials Genome Institute, Shanghai University, Shanghai 200444 (China); Chen, Lidong [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China)

    2014-11-17

    We theoretically demonstrate that the thermopower in two-dimensional quantum wells (QWs) can be significantly enhanced by its Rashba spin-splitting effect, governed by the one-dimensional density of states in the low Fermi energy region. The thermopower enhancement is due to the lower Fermi level for a given carrier concentration in Rashba QWs, as compared with that in normal two-dimensional systems without the spin-splitting effect. The degenerate approximation directly shows that larger strength of Rashba effect leads to higher thermopower and consequently better thermoelectric performance in QWs.

  18. Intersubband infrared absorption in stepped quantum wells under intense irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Aceituno, P [Departamento de Fisica Basica, Universidad de La Laguna, La Laguna 38206-Tenerife, Canary Islands (Spain); Hernandez-Cabrera, A [Departamento de Fisica Basica, Universidad de La Laguna, La Laguna 38206-Tenerife, Canary Islands (Spain); Vasko, F T [Institute of Semiconductor Physics, NAS of Ukraine, Kiev 252650 (Ukraine)

    2005-11-02

    The effect of an intense THz irradiation on the relative intersubband absorption of electrons in stepped quantum wells of GaAs-GaAlAs is theoretically studied. Analytical expressions for the induced current are obtained by means of the adiabatic and resonant approximations within the matrix density formalism. This method allows one to predict the presence of a marked fine structure on the absorption, together with a shift and broadening of the absorption peaks, when the pump intensity is around the megawatts level.

  19. Interface Roughness Scattering on Electronic Transport in a Quantum Well

    Institute of Scientific and Technical Information of China (English)

    郑以松; 吕天全; 张程祥; 苏文辉

    2003-01-01

    Several theoretical models are established to simulate the interface roughness in a quantum well. The numerical result shows that the roughness correlation function always deviates from the extensively used Gaussian form to some extent, which depends on what a model is used. The influence of such a deviation on the electronic transport property is investigated by assuming several different analytical forms of the correlation function. It is found that the Fermi wavevector is crucial to determine whether the conductivity depends sensitively on the details of the correlation function.

  20. Ground- and excited-state impurity bands in quantum wells

    Science.gov (United States)

    Ghazali, A.; Gold, A.; Serre, J.

    1989-02-01

    The density of states and the spectral density of electrons in quantum wells with charged impurities are calculated with use of a multiple-scattering method. The impurity-density-dependent broadening and the gradual merging of the ground (1s) and excited (2p+/-,2s) impurity levels into impurity bands are investigated. At low density the shapes of the 1s, 2p+/-, and 2s spectral densities are found to be in excellent agreement with the analytical results obtained for the ideal two-dimensional Coulomb problem.

  1. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    Science.gov (United States)

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-01-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors. PMID:27456691

  2. Highly efficient metallic optical incouplers for quantum well infrared photodetectors

    Science.gov (United States)

    Liu, Long; Chen, Yu; Huang, Zhong; Du, Wei; Zhan, Peng; Wang, Zhenlin

    2016-07-01

    Herein, we propose a highly efficient metallic optical incoupler for a quantum well infrared photodetector (QWIP) operating in the spectrum range of 14~16 μm, which consists of an array of metal micropatches and a periodically corrugated metallic back plate sandwiching a semiconductor active layer. By exploiting the excitations of microcavity modes and hybrid spoof surface plasmons (SSPs) modes, this optical incoupler can convert infrared radiation efficiently into the quantum wells (QWs) layer of semiconductor region with large electrical field component (Ez) normal to the plane of QWs. Our further numerical simulations for optimization indicate that by tuning microcavity mode to overlap with hybrid SSPs mode in spectrum, a coupled mode is formed, which leads to 33-fold enhanced light absorption for QWs centered at wavelength of 14.5 μm compared with isotropic absorption of QWs without any metallic microstructures, as well as a large value of coupling efficiency (η) of |Ez|2 ~ 6. This coupled mode shows a slight dispersion over ~40° and weak polarization dependence, which is quite beneficial to the high performance infrared photodetectors.

  3. Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

    Science.gov (United States)

    Beeler, M.; Bougerol, C.; Bellet-Amalric, E.; Monroy, E.

    2013-08-01

    We report on AlGaN/GaN multi-quantum-well structures displaying intersubband absorption in the THz spectral range. First, we theoretically analyze the weaknesses of the state-of-the-art GaN-based step-quantum-well architecture from an optoelectronic standpoint. We then propose a modified geometry with improved structural robustness considering the uncertainties associated to the growth. This later structure, consisting of 4-layer quantum wells, has been grown by plasma-assisted molecular-beam epitaxy and characterized structurally and optically. Low temperature absorption of samples with different Si doping levels confirms intersubband transitions in the far-infrared, centred at 28 μm.

  4. Time-resolved photo and radio-luminescence studies demonstrate the possibility of using InGaN/GaN quantum wells as fast scintillators.

    Science.gov (United States)

    Balakrishnan, G

    2015-03-06

    In the recent publication by Hospodková et al, the authors investigate III-N quantum well structures as potential fast scintillators (Hospodková et al 2014 Nanotechnology 25 455501). The InGaN/GaN quantum well structures are grown using metal organic vapour phase epitaxy on a sapphire substrate and the fast carrier decay times are characterized by time resolved photo and radioluminescence.

  5. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

    Institute of Scientific and Technical Information of China (English)

    LIANG Song; ZHU Hong-Liang; PAN Jiao-Qing; ZHAO Ling-Juan; WANG Wei

    2005-01-01

    @@ Thermal annealing effect on InAs quantum dots grown on vicinal (100) GaAs substrates is studied in comparison with dots on exact (100) GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.

  6. Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing

    Energy Technology Data Exchange (ETDEWEB)

    Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

    2013-07-15

    A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

  7. Growth and Optimization of 2 Micrometers InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

    Science.gov (United States)

    2013-08-01

    optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distributed Bragg...cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved... optically pumped vertical- external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/ AlGaAs distri- buted Bragg

  8. Optimized photonic crystal design for quantum well infrared photodetectors

    Science.gov (United States)

    Reininger, P.; Kalchmair, S.; Gansch, R.; Andrews, A. M.; Detz, H.; Zederbauer, T.; Ahn, S. I.; Schrenk, W.; Strasser, G.

    2012-06-01

    The performance of quantum well infrared photodetectors (QWIP) can be significantly enhanced combining it with a photonic crystal slab (PCS) resonator. In such a system the chosen PCS mode is designed to coincide with the absorption maximum of the photodetector by adjusting the lattice parameters. However there is a multitude of parameter sets that exhibit the same resonance frequency of the chosen PCS mode. We have investigated how the choice of the PC design can be exploited for a further enhancement of QWIPs. Several sets of lattice parameters that exhibit the chosen PCS mode at the same resonance frequency have been obtained and the finite difference time domain method was used to simulate the absorption spectra of the different PCS. A photonic crystal slab quantum well infrared photodetector with three different photonic crystal lattice designs that exhibit the same resonance frequency of the chosen PCS mode were designed, fabricated and measured. This work shows that the quality factor of a PCS-QWIP and therefore the absorption enhancement can be increased by an optimized PCS design. The improvement is a combined effect of a changed lattice constant, PC normalized radius and normalized slab thickness. An enhancement of the measured photocurrent of more than a factor of two was measured.

  9. Bose condensation of interwell excitons in double quantum wells

    CERN Document Server

    Larionov, A V; Ni, P A; Dubonos, S V; Hvam, I; Soerensen, K

    2002-01-01

    The luminescence of the interwell excitons in the GaAs/AlGaAs double quantum wells, containing large-scale fluctuations of the random potential in the heteroboundary planes, is studied. The properties of the excitons, wherein the excited electron and hole are spatially separated between the neighboring quantum wells by the density and temperature variation within the domain limits of the scale below one micron, are investigated. The interwell excitons by low pumping (below 50 mW) are strongly localized due to the small-scale fluctuations of the random potential. The localized excitons line grows by increase in the resonance excitation capacity through the threshold method. With the temperature growth this line disappears in the spectrum (T sub c <= 3.4 K). The above phenomenon is related to the Bose-Einstein condensation in the quasi-two-dimensional system of the interwell excitons. The critical values of the exciton density and temperature in the studied temperature range (1.5-3.4 K) grow according to the...

  10. Ground state of excitons in quantum-dot quantum-well nanoparticles:stochastic variational method

    Institute of Scientific and Technical Information of China (English)

    Zhang Heng; Shi Jun-Jie

    2004-01-01

    Within the framework of effective mass approximation, the ground state of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles is solved by using the stochastic variational method, in which the finite band offset and the heavy (light) hole exciton states are considered. The calculated lse-lsh transition energies for the chosen CdS/HgS/CdS QDQW samples are in good agreement with the experimental measurements. Moreover,some previous theoretical results are improved.

  11. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Wen; Chang, Kai; /Beijing, Inst. Semiconductors; Zhang, Shou-Cheng; /Stanford U., Phys. Dept.

    2010-03-19

    Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes from normal to inverted. We show that the intrinsic spin Hall effect of the conduction band vanishes on the normal side, while it is finite on the inverted side. This difference gives a direct mechanism to experimentally distinguish the intrinsic spin Hall effect from the extrinsic one.

  12. Polarization converters on double hetero structures containing strained quantum wells

    Science.gov (United States)

    Khalique, U.; van der Tol, J. J. G. M.; Nötzel, R.; Smit, M. K.

    2009-02-01

    The importance of polarization manipulation is increased as optical fiber systems evolve to higher data rates. Photonic integrated circuits should be insensitive to the state of polarization of the light emanating from fibers if they are to be used as detectors, add-drop mutiplexers or cross connects. Either all the integrated components have to be polarization independent or only one polarization direction should be used. For either method, a compact polarization converter is useful. A model is developed for the mode propagation in the waveguide of the slanted side polarization converter based on double hetero structures. The model is extended to include polarization dependent absorption and mismatch. Polarization converters on different double heterostructures (with and without quantum wells) have been designed and are realized by contact optical lithography. The performance of the realized converters is well described with the model.

  13. Quantum wells under an in-plane magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Cabrera, A. [Dpto. Fisica Basica, Universidad de La Laguna, La Laguna, 38206 Tenerife (Spain)], E-mail: ajhernan@ull.es; Aceituno, P. [Dpto. Fisica Basica, Universidad de La Laguna, La Laguna, 38206 Tenerife (Spain); Vasko, F.T. [Institute of Semiconductor Physics, NAS Ukraine, Pr. Nauki 41, Kiev 03028 (Ukraine)

    2008-05-15

    The dependence of the electronic spin-splitting energy on the composition parameters (x,y) in In{sub x}Ga{sub 1-x}As-In{sub y}Al{sub 1-y}As-based quantum wells, has been calculated. InGaAs narrow gap structures, subjected to in-plane magnetic fields, have been selected because these structures have a big Lande factor. The dependence of the Lande factor both on the applied fields and composition parameters has been included for fixed well width and external electric field. Contributions from the interfaces and strain, which also depend on the composition, are included. Spin-splitting energy and density of states show a strong dependence on the above parameters.

  14. Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells

    Science.gov (United States)

    Zeng, K. C.; Smith, M.; Lin, J. Y.; Jiang, H. X.; Robert, J. C.; Piner, E. L.; McIntosh, F. G.; Bahbahani, M.; Bedair, S. M.; Zavada, J.

    1997-03-01

    Picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the dynamic processes of optical transitions in InGaN/AlGaN multiple quantum wells (MQW) grown by metal-organic chemical vapor deposition (MOCVD). The dynamical behavior of the PL emission reveals that the main emission line in these MQW is the combination of the localized exciton and a band-to-impurity emission lines. The spectral lineshape and the recombination dynamics of the localized exciton and of the band-to-impurity transitions have been systematically investigated at different temperatures and excitation intensities and for MQW with different structures and growth conditions. From these studies, important parameters, including the localization energy and the recombination lifetimes of the localized excitons in InGaN/AlGaN quantum wells, the well width fluctuation, alloy compositions in the well and the barrier materials, and the band offset between InGaN and AlGaN can be deduced. Comparing with time-resolved PL results of InGaN/GaN and GaN/AlGaN MQW, important effects of interface on the optical properties of the III-nitride MQW have been evaluated. Implications of our results to device applications will be discussed.

  15. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Soto Rodriguez, Paul E. D., E-mail: p.soto@isom.upm.es; Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique [Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Mánuel, José M.; Jiménez, Juan J.; García, Rafael [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); Morales, Francisco M. [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, Cádiz (Spain); Senichev, Alexander [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120 (Germany); Lienau, Christoph [Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg (Germany); Nötzel, Richard, E-mail: noetzel500@gmail.com [L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy)

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  16. Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

    Energy Technology Data Exchange (ETDEWEB)

    Growden, Tyler A.; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Brown, E. R.; Zhang, Weidong [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States); Droopad, Ravi [Ingram School of Engineering, Texas State University, San Marcos, Texas 78666 (United States)

    2015-10-12

    An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

  17. GaSb quantum rings in GaAs/Al{sub x}Ga{sub 1−x}As quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Hodgson, P. D., E-mail: pdhodgson@hotmail.co.uk; Hayne, M.; Robson, A. J.; Zhuang, Q. D. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Danos, L. [Department of Chemistry, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2016-01-28

    We report the results of continuous and time-resolved photoluminescence measurements on type-II GaSb quantum rings embedded within GaAs/Al{sub x}Ga{sub 1−x}As quantum wells. A range of samples were grown with different well widths, compensation-doping concentrations within the wells, and number of quantum-ring layers. We find that each of these variants have no discernible effect on the radiative recombination, except for the very narrowest (5 nm) quantum well. In contrast, single-particle numerical simulations of the sample predict changes in photoluminescence energy of up to 200 meV. This remarkable difference is explained by the strong Coulomb binding of electrons to rings that are multiply charged with holes. The resilience of the emission to compensation doping indicates that multiple hole occupancy of the quantum rings is required for efficient carrier recombination, regardless of whether these holes come from doping or excitation.

  18. Influence of Rapid Thermal Annealing on Carrier Dynamics in GaInNAs/GaAs Multiple Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    ZHOU Wei; YANG Jie; XIA Su-Jing; LI Xiang; TANG Wu

    2011-01-01

    The excitation intensity and time-resolved photoluminescence spectroscopy are used to investigate the impact of annealing on the carrier dynamics in the Ga0.66In0.34N0.013As0.987 /GaAs multiple quantum well structure grown by metalorganic chemical vapor deposition.The measurement of excitation intensity photoluminescence (PL),performed for as-grown and annealed samples at different temperatures,indicates that the localized potential has come down slightly after annealing but does not alter the fact that PL emission at low temperature is dominated by localized exciton recombination.In contrast,free carrier recombination is magnified by post-grown annealing at room temperature.Our results show that the decay times are 0.587 and 0.327ns at 10K for the as-grown and annealed samples,and radiative decay times also shorten significantly after annealing at all temperatures.Hence the improvement of luminescence efficiency after annealing is caused by the reduction of localization and enhancement of radiative recombination rate.The reduction of the density of nonradiative centers is demonstrated indirectly after annealing.Recently,GaInNAs alloys have attracted an increasing amount of attention,driven by not only their potential applications in various electronic and optoelectronics devices but also their intriguing physical properties.[1] It has been demonstrated that the optical quality of GaInNAs/GaAs quantum wells can be improved by rapid thermal annealing (RTA).[2,3]%The excitation intensity and time-resolved photoluminescence spectroscopy are used to investigate the impact of annealing on the carrier dynamics in the Ga0.66ln0.34N0.013As0.987/GaAs multiple quantum well structure grown by metalorganic chemical vapor deposition. The measurement of excitation intensity photoluminescence (PL), performed for as-grown and annealed samples at different temperatures, indicates that the localized potential has come down slightly after annealing but does not alter the fact that PL

  19. Quantum Algorithms for Some Well-Known NP Problems

    Institute of Scientific and Technical Information of China (English)

    GUO Hao; LONG Gui-Lu; LI Feng

    2002-01-01

    It is known that quantum computer is more powerful than classical computer.In this paper we present quantum algorithms for some famous NP problems in graph theory and combination theory,these quantum algorithms are at least quadratically faster than the classical ones.

  20. Photoelectric Characteristics of Double Barrier Quantum Dots-Quantum Well Photodetector

    Directory of Open Access Journals (Sweden)

    M. J. Wang

    2015-01-01

    Full Text Available The photodetector based on double barrier AlAs/GaAs/AlAs heterostructures and a layer self-assembled InAs quantum dots and In0.15Ga0.85As quantum well (QW hybrid structure is demonstrated. The detection sensitivity and detection ability under weak illuminations have been proved. The dark current of the device can remain at 0.1 pA at 100 K, even lower to 3.05×10-15 A, at bias of −1.35 V. Its current responsivity can reach about 6.8×105 A/W when 1 pw 633 nm light power and −4 V bias are added. Meanwhile a peculiar amplitude quantum oscillation characteristic is observed in testing. A simple model is used to qualitatively describe. The results demonstrate that the InAs monolayer can effectively absorb photons and the double barrier hybrid structure with quantum dots in well can be used for low-light-level detection.

  1. Arrays of Ag split-ring resonators coupled to InGaAs single-quantum-well gain

    CERN Document Server

    Meinzer, Nina; Linden, Stefan; Soukoulis, Costas M; Khitrova, Galina; Hendrickson, Joshua; Olitsky, Joshua D; Gibbs, Hyatt M; Wegener, Martin

    2010-01-01

    We study arrays of silver split-ring resonators operating at around 1.5-{\\mu}m wavelength coupled to an MBE-grown single 12.7-nm thin InGaAs quantum well separated only 4.8 nm from the wafer surface. The samples are held at liquid-helium temperature and are pumped by intense femtosecond optical pulses at 0.81-{\\mu}m center wavelength in a pump-probe geometry. We observe much larger relative transmittance changes (up to about 8%) on the split-ring-resonator arrays as compared to the bare quantum well (not more than 1-2%). We also observe a much more rapid temporal decay component of the differential transmittance signal of 15 ps for the case of split-ring resonators coupled to the quantum well compared to the case of the bare quantum well, where we find about 0.7 ns. The latter observation is ascribed to the Purcell effect that arises from the evanescent coupling of the split-ring resonators to the quantum-well gain. All experimental results are compared with a recently introduced analytical toy model that acc...

  2. Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→ Δ scattering

    Science.gov (United States)

    Lever, L.; Ikonić, Z.; Valavanis, A.; Kelsall, R. W.; Myronov, M.; Leadley, D. R.; Hu, Y.; Owens, N.; Gardes, F. Y.; Reed, G. T.

    2012-12-01

    We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si0.22Ge0.78 virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the Γ-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the Γ-valley carrier lifetimes by evaluating the Γ →L and Γ →Δ scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically varied dimensions. We find that Γ →Δ scattering is significant in compressively strained Ge quantum wells and that the Γ-valley electron lifetime is less than 50 fs in the highly strained structures reported here, where Γ →Δ scattering accounted for approximately half of the total scattering rate.

  3. Multiple quantum wells for passive ultra short laser pulse generation

    CERN Document Server

    Quintero-Torres, R; Rodriguez-Rodriguez, E; Stintz, Andreas; Diels, Jean-Claude

    2007-01-01

    Solid state lasers are demanding independent control in the gain media and cavity loss to achieve ultra short laser pulses using passive mode-locking. Recently, laser mode-locking is achieved with a MBE structure with multiple quantum wells, designed to achieve two functions; Bragg mirror and changes in absorption to control the cavity dynamics. The use of an AlGaAs/AlAs Bragg mirror with a 15 nm GaAs saturable absorber used in a Cr:LiSAF tuneable laser proved to be effective to produce femtosecond pulses. The use of saturable absorbers thus far is a trial and error procedure that is changing due to the correlation with more predictive procedures.

  4. Indirect excitons in (111) GaAs double quantum wells

    Science.gov (United States)

    Hubert, C.; Biermann, K.; Hernández-Mínguez, A.; Santos, P. V.

    2017-08-01

    We study the dynamics of indirect (or dipolar) excitons (interwell IXs) in GaAs (111) double quantum wells (DQWs) subjected to a transverse electric field. In comparison with single (111) QWs, these DQWs can store, for a comparable applied fields and optical excitation density, a density of interwell IXs much larger than in SQWs, thus leading to stronger interwell IX- IX repulsive interactions. We show by means of spatially-resolved optical spectroscopy that interwell IXs in (111) DWQs can be transported over distances exceeding 60 μm. From the spectral dependence of the interwell IX spatial distribution profiles, we show that the long transport distances are due to drift forces arising from the strong interwell IX- IX interactions.

  5. High frequency modeling for quantum-well laser diodes

    Institute of Scientific and Technical Information of China (English)

    GAO JianJun

    2009-01-01

    High frequency modeling of quantum-well (OW) laser diodes for optoelectronic integrated circuit (OEIC) design is discussed in this paper. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects at both de and high frequency. The concepts of equivalent circuits representing both intrinsic and extrinsic components in a QW laser diode are ana-lyzed to obtain a physics-based high frequency model. The model is based on the physical rate equa-tions, and is versatile in that it permits both small-and large-signal simulations to be performed. Sev-eral procedures of the high frequency model parameter extraction are also discussed. Emphasis here is placed on validating the model via a comparison of simulated results with measured data of the small-signal modulation response, obtained over a wide range of optical output powers.

  6. Integrated photonic crystals and quantum well infrared photodetector

    Science.gov (United States)

    Zhou, T.; Tsui, D. C.; Choi, K. K.

    2004-03-01

    GaAs/AlGaAs based quantum well infrared photodetectors (QWIP) are becoming very reliable technologies that are widely used to detect mid-infrared light. Photonic crystals, on the other hand, are very powerful tools to manipulate light and thus are very crucial elements in future optical integration circuits. have fabricated a series of devices that incorporate QWIP and 2d photonic crystals together on a single GaAs based chip. These devices work at the 7-13 μ m range. Compared with the conventional photonic crystals designed for fiber communication, these devices have the advantage that they only require photolithography instead of e-beam lithography. The fabrication of such devices is thus far less costly and time-consuming.

  7. Bose-Einstein condensation of dipolar excitons in quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Timofeev, V B; Gorbunov, A V, E-mail: timofeev@issp.ac.r [Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region (Russian Federation)

    2009-02-01

    The experiments on Bose-Einstein condensation (BEC) of dipolar (spatially-indirect) excitons in the lateral traps in GaAs/AlGaAs Schottky-diode heterostructures with double and single quantum wells are presented. The condensed part of dipolar excitons under detection in the far zone is placed in k-space in the range which is almost two orders of magnitude less than thermal exciton wave vector. BEC occurs spontaneously in a reservoir of thermalized excitons. Luminescence images of Bose-condensate of dipolar excitons exhibit along perimeter of circular trap axially symmetrical spatial structures of equidistant bright spots which strongly depend on excitation power and temperature. By means of two-beam interference experiments with the use of cw and pulsed photoexcitation it was found that the state of dipolar exciton Bose-condensate is spatially coherent and the whole patterned luminescence configuration in real space is described by a common wave function.

  8. Impurity binding energy for -doped quantum well structures

    Indian Academy of Sciences (India)

    V Tulupenko; C A Duque; R Demediuk; O Fomina; V Akimov; V Belykh; T Dmitrichenko; V Poroshin

    2014-10-01

    The binding energy of an impurity delta layer situated either in the centre or at the edge of a quantum well (QW) is theoretically considered for the example of -type Si0.8Ge0.2/Si/Si0.8Ge0.2 QW doped with phosphorus. Calculations are made for the case of not so big impurity concentrations, when impurity bands are not yet formed and it is still possible to treat impurity as isolated ones. It is shown on the base of self-consistent solution of Schrödinger, Poisson and electro-neutrality equations that impurity binding energy is dependent on the degree of impurity ionization and the most noticeably for the case of edge-doped QWs.

  9. Probing light emission from quantum wells within a single nanorod

    Science.gov (United States)

    Bruckbauer, Jochen; Edwards, Paul R.; Bai, Jie; Wang, Tao; Martin, Robert W.

    2013-09-01

    Significant improvements in the efficiency of optoelectronic devices can result from the exploitation of nanostructures. These require optimal nanocharacterization techniques to fully understand and improve their performance. In this study we employ room temperature cathodoluminescence hyperspectral imaging to probe single GaN-based nanorods containing multiple quantum wells (MQWs) with a simultaneous combination of very high spatial and spectral resolution. We have investigated the strain state and carrier transport in the vicinity of the MQWs, demonstrating the high efficiencies resulting from reduced electric fields. Power-dependent photoluminescence spectroscopy of arrays of these nanorods confirms that their fabrication results in partial strain relaxation in the MQWs. Our technique allows us to interrogate the structures on a sufficiently small length scale to be able to extract the important information.

  10. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Science.gov (United States)

    Lin, Chung-Yi; Huang, Chih-Hsiung; Huang, Shih-Hsien; Chang, Chih-Chiang; Liu, C. W.; Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping

    2016-08-01

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al2O3/SiO2 passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al2O3/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al2O3 and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  11. Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing.

    Science.gov (United States)

    Jain, Siddharth R; Sysak, Matthew N; Kurczveil, Geza; Bowers, John E

    2011-07-04

    We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with 14 dB DC extinction at 4 V bias.

  12. Characteristics of long wavelength InGaN quantum well laser diodes

    Science.gov (United States)

    Kim, K. S.; Son, J. K.; Lee, S. N.; Sung, Y. J.; Paek, H. S.; Kim, H. K.; Kim, M. Y.; Ha, K. H.; Ryu, H. Y.; Nam, O. H.; Jang, T.; Park, Y. J.

    2008-03-01

    We demonstrated the long wavelength (485nm) lasing of InGaN laser diodes under continuous wave condition at room temperature over 10mW. Two InGaN laser structures were adapted with different indium composition for InGaN optical confinement layers (OCLs) below quantum wells. The blue shift of electroluminescence (EL) was reduced in InGaN laser diodes grown on 3% In concentration in InGaN OCL compared with 1.5% In concentration in InGaN OCL. The EL peak for laser diode with 3% In concentration in InGaN OCL occurs at longer wavelength for all current levels compared to the laser with 1.5% In concentration in InGaN OCL. In addition, the laterally nonuniform InGaN wells grown on 1.5% In concentration in InGaN OCL was verified by the cross-sectional view of InGaN active layer using high-resolution transmission electron microscopy.

  13. Time-resolved photoluminescence of sub-monolayer InGaAs/GaAs quantum-dot-quantum-well heterostructures

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Jia, G.Z.; Sun, L.

    2005-01-01

    Time-resolved photoluminescence (PL) of sub-monolayer (SML) InGaAs/GaAs quantum-dot-quantum-well heterostructures was measured at 5 K for the first time. The radiative lifetime of SML quantum dots (QDs) increases from 500 ps to 800 ps with the increase of the size of QDs, which is related...

  14. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots

    Science.gov (United States)

    Leon, R.; Swift, G. M.; Magness, B.; Taylor, W. A.; Tang, Y. S.; Wang, K. L.; Dowd, P.; Zhang, Y. H.

    2000-01-01

    The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.

  15. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V I [Institute for Chemical Problems of Microelectronics, 119017 Moscow (Russian Federation); Kazakov, I P [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation); Rzaev, M M [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation); Burbaev, T M [PN Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow (Russian Federation)

    2002-12-09

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si{sub 1-x}Ge{sub x} (0 {<=} x {<=} 1) buffer layer and a GaAs layer with In{sub y}Ga{sub 1-y}As (y {approx} 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 {mu}m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  16. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  17. Hole weak anti-localization in a strained-Ge surface quantum well

    Science.gov (United States)

    Mizokuchi, R.; Torresani, P.; Maurand, R.; Zeng, Z.; Niquet, Y.-M.; Myronov, M.; De Franceschi, S.

    2017-08-01

    We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field and hence to the carrier density. In the low-density, the single-subband regime, by fitting the weak anti-localization peak to an analytic model, we extract the characteristic transport time scales and a spin splitting energy ΔSO˜ 1 meV. Tight-binding calculations show that ΔSO is dominated by a cubic term in the in-plane wave vector. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and associate this finding to an effect of intersubband scattering induced by interface defects.

  18. Development and application of InAsP/InP quantum well infrared detector

    Science.gov (United States)

    Geetanjali, Porwal, S.; Kumar, R.; Dixit, V. K.; Sharma, T. K.; Oak, S. M.

    2016-05-01

    InAsxP1-x/InP quantum wells grown using metal organic vapor phase epitaxy are investigated for infrared detector applications. The structural parameters of the QWs are evaluated from high resolution x-ray diffraction. The electronic transition energies measured from surface photo voltage and photoconductivity confirms that these QWs can be used for fabricating IR detectors in the wide wavelength range, i.e. 0.9-1.46 µm by inter-band transitions and 7-18 µm by inter-sub-band transitions. Subsequently the functionality of one such fabricated InAsxP1-x/InPQW detector is verified by measuring the photoluminescence of suitable semiconductor quantum well structure. At the request of all authors of the paper, and with the agreement of the Proceedings Editor, an updated version of this article was published on 24 June 2016. The original version supplied to AIP Publishing contained an error in the Figures 1 and 2 where the right side of the images were cutoff. The error has been corrected in the updated and re-published article.

  19. Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells

    Science.gov (United States)

    Giorgioni, Anna; Paleari, Stefano; Cecchi, Stefano; Vitiello, Elisa; Grilli, Emanuele; Isella, Giovanni; Jantsch, Wolfgang; Fanciulli, Marco; Pezzoli, Fabio

    2016-12-01

    Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome these fundamental limitations by investigating a two-dimensional electron gas in quantum wells of pure Ge grown on Si. These epitaxial systems demonstrate exceptionally long spin lifetimes. In particular, by fine-tuning quantum confinement we demonstrate that the electron Landé g factor can be engineered in our CMOS-compatible architecture over a range previously inaccessible for Si spintronics.

  20. Periodic Two-Dimensional GaAs and InGaAs Quantum Rings Grown on GaAs (001) by Droplet Epitaxy.

    Science.gov (United States)

    Tung, Kar Hoo Patrick; Huang, Jian; Danner, Aaron

    2016-06-01

    Growth of ordered GaAs and InGaAs quantum rings (QRs) in a patterned SiO2 nanohole template by molecular beam epitaxy (MBE) using droplet epitaxy (DE) process is demonstrated. DE is an MBE growth technique used to fabricate quantum nanostructures of high crystal quality by supplying group III and group V elements in separate phases. In this work, ordered QRs grown on an ordered nanohole template are compared to self-assembled QRs grown with the same DE technique without the nanohole template. This study allows us to understand and compare the surface kinetics of Ga and InGa droplets when a template is present. It is found that template-grown GaAs QRs form clustered rings which can be attributed to low mobility of Ga droplets resulting in multiple nucleation sites for QR formation when As is supplied. However, the case of template-grown InGaAs QRs only one ring is formed per nanohole; no clustering is observed. The outer QR diameter is a close match to the nanohole template diameter. This can be attributed to more mobile InGa droplets, which coalesce from an Ostwald ripening to form a single large droplet before As is supplied. Thus, well-patterned InGaAs QRs are demonstrated and the kinetics of their growth are better understood which could potentially lead to improvements in the future devices that require the unique properties of patterned QRs.

  1. 1300 nm wavelength InAs quantum dot photodetector grown on silicon.

    Science.gov (United States)

    Sandall, Ian; Ng, Jo Shien; David, John P R; Tan, Chee Hing; Wang, Ting; Liu, Huiyun

    2012-05-07

    The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the dark currents were two orders of magnitude lower than those reported for Ge on Si photodiodes. The diodes exhibited avalanche breakdown at 22 V reverse bias which is probably dominated by impact ionisation occurring in the GaAs and AlGaAs barrier layers. A red shift in the absorption peak of 61.2 meV was measured when the reverse bias was increased from 0 to 22 V, which we attributed to the quantum confined stark effect. This shift also leads to an increase in the responsivity at a fixed wavelength as the bias is increased, yielding a maximum increase in responsivity by a factor of 140 at the wavelength of 1365 nm, illustrating the potential for such a structure to be used as an optical modulator.

  2. Carrier confinement in Ge/Si quantum dots grown with an intermediate ultrathin oxide layer

    Science.gov (United States)

    Kuryliuk, V.; Korotchenkov, O.; Cantarero, A.

    2012-02-01

    We present computational results for strain effects on charge carrier confinement in GexSi1-x quantum dots (QDs) grown on an oxidized Si surface. The strain and free carrier probability density distributions are obtained using the continuum elasticity theory and the effective-mass approximation implemented by a finite-element modeling scheme. Using realistic parameters and conditions for hemisphere and pyramid QDs, it is pointed out that an uncapped hemisphere dot deposited on the Si surface with an intermediate ultrathin oxide layer offers advantageous electron-hole separation distances with respect to a square-based pyramid grown directly on Si. The enhanced separation is associated with a larger electron localization depth in the Si substrate for uncapped hemisphere dots. Thus, for dot diameters smaller than 15-20 nm and surface density of the dots (nQD) ranging from about 1010 to 1012 cm-2, the localization depth may be enhanced from about 8 nm for a pyramid to 38 nm for a hemisphere dot. We find that the effect in a hemisphere dot is very sensitive to the dot density and size, whereas the localization depth is not significantly affected by the variation of the Ge fraction x in GexSi1-x and the aspect ratio of the dot. We also calculate the effect of the fixed oxide charge (Qox) with densities ranging from 10-9 to 10-7 C/cm2 for 10-Ωcm p-type Si wafers on the carrier confinement. Although the confinement potential can be strongly perturbed by the charge at nQD less than ≈4×1011 cm-2, it is not very sensitive to the value of Qox at higher nQD. Since, to our knowledge, there are no data on carrier confinement for Ge QDs deposited on oxidized Si surfaces, these results might be applicable to functional devices utilizing separated electrons and holes such as photovoltaic devices, spin transistors, and quantum computing components. The use of hemisphere QDs placed on oxidized Si rather than pyramid dots grown on bare Si may help to confine charge carriers deeper

  3. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser

    Institute of Scientific and Technical Information of China (English)

    CAO Yu-Lian; CHEN Liang-Hui; LIAN Peng; MA Wen-Quan; WANG Qing; WU Xu-Ming; HE Guo-Rong; LI Hui; WANG Xiao-Dong; SONG Guo-Feng

    2006-01-01

    @@ We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition.

  4. Heterointegration of InGaAs/GaAs quantum wells on micro-patterned Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jung, A., E-mail: junga@phys.ethz.ch; Taboada, A. G.; Stumpf, W.; Kreiliger, T.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Isa, F. [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Isella, G. [L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Barthazy Meier, E. [Scientific Center for Optical and Electron Microscopy (ScopeM), ETH Zürich, Auguste-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2015-08-21

    InGaAs/GaAs quantum wells (QWs) grown on μ-patterned Ge/Si substrates by metal organic vapor phase epitaxy are investigated by electron microscopy and spatially resolved photoluminescence (PL) spectroscopy. The lattice parameter mismatch of GaAs and Si is overcome by a Ge buffer layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals form truncated pyramids whose shape is strongly affected by the geometry of the underlying pattern consisting of 8 μm deep and 3–50 μm wide square Si pillars. Comparing the measured PL energies with calculations performed in the effective mass approximation reveals that the QW emission energies are significantly influenced by the GaAs morphology. It is shown that the geometry favors indium diffusion during growth from the inclined facets towards the top (001) facet. The Si pillar-size dependent release of thermally induced strain observed in the PL measurements is confirmed by X-ray diffraction.

  5. Quantum theory of exciton-photon coupling in photonic crystal slabs with embedded quantum wells

    CERN Document Server

    Gerace, D

    2007-01-01

    A theoretical description of radiation-matter coupling for semiconductor-based photonic crystal slabs is presented, in which quantum wells are embedded within the waveguide core layer. A full quantum theory is developed, by quantizing both the electromagnetic field with a spatial modulation of the refractive index and the exciton center of mass field in a periodic piecewise constant potential. The second-quantized hamiltonian of the interacting system is diagonalized with a generalized Hopfield method, thus yielding the complex dispersion of mixed exciton-photon modes including losses. The occurrence of both weak and strong coupling regimes is studied, and it is concluded that the new eigenstates of the system are described by quasi-particles called photonic crystal polaritons, which can occur in two situations: (i) below the light line, when a resonance between exciton and non-radiative photon levels occurs (guided polaritons), (ii) above the light line, provided the exciton-photon coupling is larger than th...

  6. Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing

    Science.gov (United States)

    Wang, Yang; Pan, Jiao-Qing; Zhao, Ling-Juan; Zhu, Hong-Liang; Wang, Wei

    2010-12-01

    Electroabsorption modulators combining Franz-Keldysh effect and quantum confined Stark effect have been monolithically integrated with tunnel-injection quantum-well distributed feedback lasers using a quantum well intermixing method. Superior characteristics such as extinction ratio and temperature insensitivity have been demonstrated at wide temperature ranges.

  7. Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications

    Science.gov (United States)

    Dou, Wei; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Mosleh, Aboozar; Zhou, Yiyin; Alharthi, Bader; Du, Wei; Margetis, Joe; Tolle, John; Kuchuk, Andrian; Benamara, Mourad; Li, Baohua; Naseem, Hameed A.; Mortazavi, Mansour; Yu, Shui-Qing

    2016-12-01

    This paper reports the study of Ge0.95Sn0.05/Ge0.91Sn0.09/Ge0.95Sn0.05 single quantum well (SQW) and double quantum wells (DQWs). The quantum well (QW) structures were grown on Ge buffered Si substrates using an industrial standard reduced-pressure chemical vapor deposition system. Pseudomorphically grown structures were observed using x-ray diffraction measurements. Defect-free interfaces between each layer were revealed using cross-sectional transmission electron microscopy. Atomic-scale high-resolution transmission electron microscopy and Fourier transform patterns exhibited the high crystalline quality of QWs. Temperature-dependent photoluminescence (PL) was performed, and the emission peaks attributed to the QW region were identified. The dominant optical transition changed from direct bandgap transition at 300 K to indirect bandgap transition at 10 K. Theoretical calculation showed the type-I band alignment for the QWs. Moreover, the Γ and L valley electron distributions and non-radiative lifetimes were evaluated, which further explained the PL characteristics of the QW samples.

  8. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    Science.gov (United States)

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  9. Emergence of the Persistent Spin Helix in Semiconductor Quantum Wells

    Energy Technology Data Exchange (ETDEWEB)

    Koralek, Jake; Weber, Chris; Orenstein, Joe; Bernevig, Andrei; Zhang, Shoucheng; Mack, Shawn; Awschalom, David

    2011-08-24

    According to Noether's theorem, for every symmetry in nature there is a corresponding conservation law. For example, invariance with respect to spatial translation corresponds to conservation of momentum. In another well-known example, invariance with respect to rotation of the electron's spin, or SU(2) symmetry, leads to conservation of spin polarization. For electrons in a solid, this symmetry is ordinarily broken by spin-orbit (SO) coupling, allowing spin angular momentum to flow to orbital angular momentum. However, it has recently been predicted that SU(2) can be recovered in a two-dimensional electron gas (2DEG), despite the presence of SO coupling. The corresponding conserved quantities include the amplitude and phase of a helical spin density wave termed the 'persistent spin helix' (PSH). SU(2) is restored, in principle, when the strength of two dominant SO interactions, the Rashba ({alpha}) and linear Dresselhaus ({beta}{sub 1}), are equal. This symmetry is predicted to be robust against all forms of spin-independent scattering, including electron-electron interactions, but is broken by the cubic Dresselhaus term ({beta}{sub 3}) and spin-dependent scattering. When these terms are negligible, the distance over which spin information can propagate is predicted to diverge as {alpha} {yields} {beta}{sub 1}. Here we observe experimentally the emergence of the PSH in GaAs quantum wells (QW's) by independently tuning {alpha} and {beta}{sub 1}. Using transient spin-grating spectroscopy (TSG), we find a spin-lifetime enhancement of two orders of magnitude near the symmetry point. Excellent quantitative agreement with theory across a wide range of sample parameters allows us to obtain an absolute measure of all relevant SO terms, identifying {beta}{sub 3} as the main SU(2) violating term in our samples. The tunable suppression of spin-relaxation demonstrated in this work is well-suited for application to spintronics.

  10. Observation of mid-infrared intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kotani, Teruhisa, E-mail: kotani.teruhisa@sharp.co.jp [Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Life and Environment Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567 (Japan); Arita, Munetaka [Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Arakawa, Yasuhiko [Institute for Nano Quantum Information Electronics, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-12-29

    Mid-infrared (4.20–4.84 μm) intersubband absorption in non-polar m-plane Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells is observed at room temperature. 10 period Al{sub 0.5}Ga{sub 0.5}N/GaN multiple-quantum wells were grown on free-standing m-plane GaN substrates by metalorganic chemical vapor deposition (MOCVD), and the high-quality structural and optical properties are revealed by x-ray diffraction and photoluminescence studies. Through this we have demonstrated that MOCVD grown non-polar m-plane AlGaN/GaN quantum wells are a promising material for mid-infrared intersubband devices.

  11. Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

    KAUST Repository

    Susilo, Tri B.

    2015-02-01

    Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.

  12. Element-free Galerkin method applied to quantum dot and quantum well nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Sperotto, Lucas Kriesel [Instituto Tecnologico de Aeronautica (ITA/IEAv), Sao Jose dos Campos, SP (Brazil). Instituto de Estudos Avancados; Passaro, Angelo; Tanaka, Roberto Y. [Instituto de Estudos Avancados (IEAv), Sao Jose dos Campos, SP (Brazil); Marques, Gleber N. [Universidade do Estado de Mato Grosso (UNEMAT), MT (Brazil)

    2012-07-01

    Full text: The development of native technologies for the fabrication of infrared photodetectors based on quantum wells and quantum dots is the goal of a set of Brazilian Research Institutes and Universities gathered in a National Institute for Science and Technology. The research covers all phases of the production of such devices in Brazil, from the design to the growing of nanostructured semiconductors, processing and characterization of samples. In this context, a set of computer programs have been developed in the recent years in order to assist the design of such structures, some of them based on the Finite Element Methods (FEM). The Element-Free Galerkin Method (EFGM) is an attractive numerical alternative to the FEM. To perform an EFGM approximation it is required a set of nodal points and the shape functions associated to each node. In this sense its similar to FEM. In the EFGM, the Moving Least Squares (MLS) is used to build highly continuous shape functions, which also result in approximations (solutions) highly continuous. The assembling of the final linear system requires support for numerical integration, which in this work is the same triangular mesh generated for the FEM. One of the main drawbacks of the EFGM is the reproduction of the physical discontinuities inherent to each phenomenon, which means discontinuities of the state variable and/or of its spatial derivatives. If no additional numerical treatment is adopted, spurious oscillations arise in the approximation nearby the discontinuity lines. For instance, some aid techniques such as the domain truncation have been successfully applied for the treatment of material interfaces in the computation of electrostatic and electromagnetic fields. Although the EFGM has been successfully tested for one-dimensional quantum well structures, additional techniques are required for ensuring the Dirichlet boundary conditions, e.g. Lagrange multipliers, which spoil the symmetrical character of the final

  13. Two-dimensional hole systems in indium-based quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Loher, Josef

    2016-08-01

    The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of InAlAs/InGaAs/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate. Within these magnetotransport experiments, a reproducible phenomenon of remarkable robustness emerged in the transverse Hall magnetoresistivity of the indium 2DHG systems which are grown on a special InAlAs step-graded metamorphic buffer layer structure to compensate crystal lattice mismatch. As a consequence of the strain relaxation process, these material systems are characterized by anisotropic properties along different crystallographic directions. We identify a puzzling offset phenomenon in the zero-field Hall magnetoresistance and demonstrate it to be a universal effect in systems with spatially anisotropic transport properties.

  14. Terahertz quantum-well photodetectors: Design, performance, and improvements

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, S., E-mail: phybuff@sjtu.edu.cn; Wang, T. M.; Hao, M. R.; Yang, Y.; Zhang, Y. H.; Shen, W. Z.; Liu, H. C. [Department of Physics and Astronomy, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240 (China)

    2013-11-21

    Theoretical studies and numerical simulations on design, performance, and improvements of terahertz quantum-well photodetector (THz QWP) are presented. In the first part of this paper, we discuss the device band structure resulting from a self-consistent solution and simulation results. First, the temperature dependence of device characteristics is analyzed. Next, we deduce the condition of optimal doping concentration for maximizing dark current limited detectivity D{sub det}* when QWP is lightly doped. Accordingly, unlike in previously published reports, doping concentration is not fixed and is selected by the above condition. In the second part of this paper, we propose two schemes for improving operation temperature. The first is to incorporate an optical antenna which focuses incident THz wave. Numerical results show that the QWP with peak frequency higher than 5.5 THz is expected to achieve background-noise-limited performance at 77 K or above when employing a 10{sup 6} times enhancement antenna. The second scheme is to use a laser as the signal source to achieve photon-noise-limited performance (PLIP) at high temperatures. Simulations show that when operating below critical temperature QWPs in the range of 1 ∼ 7 THz can reach PLIP under practical illumination intensities.

  15. Fractal quantum well heterostructures for broadband light emitters

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, M.H.; Gourley, P.L.; Meissner, K.E.; Sinclair, M.B.; Jones, E.D.; Chow, W.W.; Schneider, R.P. Jr.

    1994-12-31

    We examine carrier relaxation and radiative recombination in AlGaAs based near IR and AlGaInP based visible fractal quantum well heterostructures. Through temperature dependent photoluminescence, we demonstrate that enhanced population of higher lying energy levels can be achieved by varying the thickness of the layers in the fractal heterostructurd. This distribution of carriers results in room temperature emission over a relatively broad range of wavelengths: approximately 700--855 nm for AlGaAs structures and 575--650 nm for AlGaInP structures. Spectra are compared to theoretical calculations to evaluate the non-equilibrium nature of the carrier distributions. Time resolved photoluminescence measurements demonstrate an approximately linear relationship between the radiative decay time and the layer thickness of the structure. Correspondingly, integrated luminescence measurements at room temperature reveal a factor of four increase in the light output efficiency of the structure as the fractal layer thickness is increased from 50 {angstrom} to 400 {angstrom}. The applicability of these heterostructures to broadband LEDs is discussed.

  16. Quantum spin Hall effect in α -Sn /CdTe(001 ) quantum-well structures

    Science.gov (United States)

    Küfner, Sebastian; Matthes, Lars; Bechstedt, Friedhelm

    2016-01-01

    The electronic and topological properties of heterovalent and heterocrystalline α -Sn/CdTe(001) quantum wells (QWs) are studied in dependence on the thickness of α -Sn by means of ab initio calculations. We calculate the topological Z2 invariants of the respective bulk crystals, which identify α -Sn as strong three-dimensional (3D) topological insulators (TIs), whereas CdTe is a trivial insulator. We predict the existence of two-dimensional (2D) topological interface states between both materials and show that a topological phase transition from a trivial insulating phase into the quantum spin Hall (QSH) phase in the QW structures occurs at much higher thicknesses than in the HgTe case. The QSH effect is characterized by the localization, dispersion, and spin polarization of the topological interface states. We address the distinction of the 3D and 2D TI characters of the studied QW structures, which is inevitable for an understanding of the underlying quantum state of matter. The 3D TI nature is characterized by two-dimensional topological interface states, while the 2D phase exhibits one-dimensional edge states. The two different state characteristics are often intermixed in the discussion of the topology of 2D QW structures, especially, the comparison of ab initio calculations and experimental transport studies.

  17. Energy transfer in organic multilayer quantum well structure and its application to OLEDs

    Institute of Scientific and Technical Information of China (English)

    ZHAO De-wei; SONG Shu-fang; ZHAO Su-ling; XU Zheng

    2007-01-01

    We fabricate a series of samples and OLEDs with organic multilayer quantum well structure, which consist of alternate PBD and Alq3. Both PBD and Alq3 are electron-transporting materials, and PBD is used as potential barrier layer, while Alq3 is used as potential well layer and emitting layer. Compared with double-layer structure, the luminescent characteristics of organic samples and diodes with quantum well structure are investigated and the quantum well structure helps the energy transfer between well layer and barrier layer. The quantum well structure makes carriers disperse in the different well layers and then increases the number of excitons to enhance the efficiency of the recombination.

  18. High Efficiency Quantum Well Waveguide Solar Cells Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The long-term objective of this program is to develop flexible, lightweight, single-junction solar cells using quantum structured designs that can achieve ultra-high...

  19. InGaAs/GaAs quantum-dot-quantum-well heterostructure formed by submonolayer deposition

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, K.; Birkedal, Dan;

    2003-01-01

    -dot-quantum-well (QDQW) structure, by using high power PL and selective PL with excitation energies below the band gap of the GaAs barriers and temperature dependent PL. As the temperature is increased from 10 to 300 K, a narrowing of the full width at half-maximum at intermediate temperatures and a sigmoidal behaviour...... of the peak energy of PL band of the SML QD ensemble are observed and attributed to thermally activated carrier transfer between QDs via QW states....

  20. Scattering mechanisms of highest-mobility InAs /AlxGa1 -xSb quantum wells

    Science.gov (United States)

    Tschirky, T.; Mueller, S.; Lehner, Ch. A.; Fält, S.; Ihn, T.; Ensslin, K.; Wegscheider, W.

    2017-03-01

    We study molecular beam epitaxially grown undoped AlxGa1 -xSb /InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al0.33Ga0.67Sb buffers and lower barriers and a quantum well width of 24 nm. These quasi-single-interface InAs/AlSb quantum well devices reached a gate-tuned mobility of 2.4 ×106cm2 /V s at a density of 1 ×1012cm-2 and 1.3 K. In Hall bar devices boundary scattering is found to strongly influence the mobility determination in this mobility regime. Ionized background impurity scattering at low electron densities, device boundary scattering at intermediate electron densities, and intersubband scattering at high electron densities were identified as the most likely dominant scattering processes. Ringlike structures in the Landau fan can be explained using a single-particle model of crossing Landau levels.

  1. Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements

    Directory of Open Access Journals (Sweden)

    A. D. Rodrigues

    2012-01-01

    Full Text Available Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs grown at various temperatures by molecular beam epitaxy were investigated using resonant Raman spectroscopy and capacitance measurements. The occurrence of quantum confinement effects was confirmed by both techniques. For the structures grown at low temperatures (300−400°C, the SAQDs optical phonon wavenumbers decrease as the Raman excitation energy is increased; this is an evidence of the scattering sensitivity to the size of the SAQDs and to the inhomogeneity in their sizes. However, the opposite behavior is observed for the SAQDs grown at higher temperatures, as a consequence of the competition between the phonon localization and internal mechanical stress effects. The E1 electronic transition of the Ge in the SAQDs was found to be shifted towards higher energies as compared to bulk Ge, due to biaxial compressive stress and to the electronic confinement effect present in the structures. The intermixing of Si atoms in the quantum dots was found to be much more significant for the sample grown at higher temperatures. The capacitance measurements, besides confirming the existence of the dots in these structures, showed that the deepest Ge layers lose their 0D signature as the growth temperature increases.

  2. Attempts to grow optically coupled Fibonacci-spaced InGaAs/GaAs quantum wells result in surface gratings.

    Science.gov (United States)

    Richards, B C; Hendrickson, J; Sweet, J; Khitrova, G; Litvinov, D; Gerthsen, D; Myer, B; Pau, S; Sarid, D; Wegener, M; Ivchenko, E L; Poddubny, A N; Gibbs, H M

    2008-12-22

    An instability in the growth of nonperiodic InGaAs/GaAs multiple quantum well samples, ordinarily of high-quality when grown with equal periods of order of half the wavelength of light in the material, leads to a dramatic microscopic, self-organized surface grating. This effect was discovered while growing quantum wells with two unequal barrier lengths arranged in a Fibonacci sequence to form an optical quasicrystal. A laser beam incident normal to the surface of the sample is diffracted into a propeller-shaped pattern. The sample surface has a distinctly cloudy appearance when viewed along one crystal axis but is mirror-like when the sample is rotated 90 degrees. The instability results in a five-fold increase in the absorption linewidth of the heavy-hole exciton transition. Atomic force microscopy, transmission electron microscopy, and scanning electron microscopy were used to study the samples.

  3. The energy-level crossing behavior and quantum Fisher information in a quantum well with spin-orbit coupling.

    Science.gov (United States)

    Wang, Z H; Zheng, Q; Wang, Xiaoguang; Li, Yong

    2016-03-02

    We study the energy-level crossing behavior in a two-dimensional quantum well with the Rashba and Dresselhaus spin-orbit couplings (SOCs). By mapping the SOC Hamiltonian onto an anisotropic Rabi model, we obtain the approximate ground state and its quantum Fisher information (QFI) via performing a unitary transformation. We find that the energy-level crossing can occur in the quantum well system within the available parameters rather than in cavity and circuit quantum eletrodynamics systems. Furthermore, the influence of two kinds of SOCs on the QFI is investigated and an intuitive explanation from the viewpoint of the stationary perturbation theory is given.

  4. InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Ramirez, J.S.; Yee-Rendon, C.M.; Cruz-Hernandez, E.; Contreras-Guerrero, R.; Vazquez-Lopez, C.; Melendez-Lira, M.; Lopez-Lopez, M. [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico D.F, 07000 (Mexico)

    2007-02-15

    Pseudomorphic InGaAs/GaAs quantum wells (QWs) and self-assembled InAs quantum dots (QDs) were grown by molecular beam epitaxy (MBE) on GaAs(11n)A substrates. Photoreflectance spectroscopy was employed to investigate the transitions in the heterostructures. The transitions in QWs have two contributions, a blue shift due to the compressive strain, and a red shift due to the quantum confined Stark effect produced by the piezoelectric field. A traditional theoretical interpretation of the QWs transitions employing a simple well model with sharp interfaces shows discrepancies with the experimental results. In order to satisfactorily explain the transitions we proposed to include segregation effects of Indium at the wells interfaces. The matrix transfer method was implemented to numerically solve the Schroedinger equation taking into account In segregation effects by including an asymmetric potential well with a profile depending on the details of the In incorporation. With segregation effects included, the calculated transitions fit very well the PR spectra. On the other hand, the transitions in self-assembled QDs were obtained by fitting the PR spectra employing a first derivative line-shape function. For n=2,4,5, two functions were required to fit the spectra. For n=3 only one function was required, in agreement with the more uniform QDs size distribution observed by atomic force microscopy on GaAs(113)A. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Comparative optical study of epitaxial InGaAs quantum rods grown with As{sub 2} and As{sub 4} sources

    Energy Technology Data Exchange (ETDEWEB)

    Nedzinskas, Ramūnas; Čechavičius, Bronislovas; Kavaliauskas, Julius; Karpus, Vytautas; Valušis, Gintaras [Semiconductor Physics Institute, Center for Physical Sciences and Technology, A. Goštauto 11, LT-01108 Vilnius (Lithuania); Li, Lianhe; Khanna, Suraj P.; Linfield, Edmund H. [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)

    2013-12-04

    Photoreflectance and photoluminescence (PL) spectroscopies are used to examine the optical properties and electronic structure of InGaAs quantum rods (QRs), embedded within InGaAs quantum well (QW). The nanostructures studied were grown by molecular beam epitaxy using As{sub 2} or As{sub 4} sources. The impact of As source on spectral features associated with interband optical transitions in the QRs and the surrounding QW are demonstrated. A red shift of the QR- and a blue shift of the QW-related optical transitions, along with a significant increase in PL intensity, have been observed if an As{sub 4} source is used. The changes in optical properties are attributed mainly to carrier confinement effects caused by variation of In content contrast between the QR material and the surrounding well.

  6. Exciton and donor binding energies in quantum-well wires and quantum dots a fractional-dimensional space approach

    Institute of Scientific and Technical Information of China (English)

    Li Hong; Kong Xiao-Jun

    2004-01-01

    A simple method for calculating the free-exciton binding energies in the fractional-dimensional-space model for single-quantum-well structure has been extended to quantum-well wires and quantum dots, in which the real anisotropic system is modelled through an effective isotropic environment with a fractional dimension. In this scheme, the fractionaldimensional parameter is chosen via an analytical procedure and involves no ansatz. We calculated the ground-state binding energies of excitons and donors in quantum-well wires with rectangular cross sections. Our results are found to be in good agreement with previous variational calculations and available experimental measurements. We also discussed the ground-state exciton binding energy changing with different shapes of quantum-well wires.

  7. Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Y.; Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn; Chen, X. Y.; Xi, S. P.; Du, B.; Ma, Y. J. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-11-23

    We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs triangular quantum wells grown on InP substrates. Reduced surface roughness, improved heterostructure interfaces and enhanced photoluminescence intensity at 2.2 μm are observed by moderate Bi-mediated growth. The nonradiative processes are analysed based on temperature-dependent photoluminescence. It is confirmed that Bi incorporation is insignificant in the samples, whereas excessive Bi flux during the growth results in deteriorated performance. The surfactant effect of Bi is promising to improve InP-based highly strained structures while the excess of Bi flux needs to be avoided.

  8. Fabrication of ZnInON/ZnO multi-quantum well solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Matsushima, Koichi, E-mail: k.matsushima@plasma.ed.kyushu-u.ac.jp [Kyushu University, Fukuoka 819-0395 (Japan); Shimizu, Ryota; Ide, Tomoaki; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu [Kyushu University, Fukuoka 819-0395 (Japan); Itagaki, Naho [Kyushu University, Fukuoka 819-0395 (Japan); PRESTO, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075 (Japan)

    2015-07-31

    We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-i-n structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (J{sub sc}) and the open-circuit voltage (V{sub oc}) of the solar cells on p-GaN templates are 1.9 μA/cm{sup 2} and 0.16 V, whereas J{sub sc} and V{sub oc} are enhanced to 2.5 μA/cm{sup 2} and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template. - Highlights: • We fabricated solar cells with ZnInON MQWs in the intrinsic region of pin structure. • J–V characteristics were measured under green laser and solar simulator light. • The efficiency is enhanced by superimposing green laser. • The long carrier lifetime contributes to carrier extraction from the well layers.

  9. Dynamic light-matter coupling across multiple spatial dimensions in a quantum dots-in-a-well heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Prasankumar, Rohit P [Los Alamos National Laboratory; Taylor, Antoinette J [Los Alamos National Laboratory

    2009-01-01

    Ultrafast density-dependent optical spectroscopic measurements on a quantum dots-in-a-well heterostructure reveal several distinctive phenomena, most notably a strong coupling between the quantum well population and light absorption at the quantum dot excited state.

  10. Single-photon emission from electrically driven InP quantum dots epitaxially grown on CMOS-compatible Si(001)

    Science.gov (United States)

    Wiesner, M.; Schulz, W.-M.; Kessler, C.; Reischle, M.; Metzner, S.; Bertram, F.; Christen, J.; Roßbach, R.; Jetter, M.; Michler, P.

    2012-08-01

    The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform. Mismatches in material properties, however, present a major challenge, leading to high defect densities in the epitaxial layers and adversely affecting radiative recombination processes. However, nanostructures, such as quantum dots, have been found to grow defect-free even in a suboptimal environment. Here we present the first realization of indium phosphide quantum dots on exactly oriented Si(001), grown by metal-organic vapour-phase epitaxy. We report electrically driven single-photon emission in the red spectral region, meeting the wavelength range of silicon avalanche photodiodes’ highest detection efficiency.

  11. InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    2002-01-01

    GaAs (100) substrates by MOCVD. InP quantum dots grown on In(0.5)Al(0.3)Ga(0.2)P have a high density on the order of about 1 - 2 x 10/sq cm with a...dominant size of about 10-15 nm for 7.5 ML growth. (1) These In(0.5)Al(0.3)Ga(0.2)P/ InP quantum dots have previously been characterized by atomic-force

  12. Blue InGaN light-emitting diodes with dip-shaped quantum wells

    Institute of Scientific and Technical Information of China (English)

    Lu Tai-Ping; Wang Hai-Long; Yang Xiao-Dong; LiShu-Ti; Zhang Kang; Liu Chao; Xiao Guo-Wei; Zhou Yu-Gang; ZhengShu-Wen; Yin Yi-An; Wu Le-Juan

    2011-01-01

    InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software.It is found that the structure with dipshaped quantum wells shows improved light output power,lower current leakage and less efficiency droop.Based on numerical simulation and analysis,these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

  13. Direct observation of free-exciton thermalization in quantum-well structures

    DEFF Research Database (Denmark)

    Umlauff, M.; Hoffmann, J.; Kalt, H.

    1998-01-01

    We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses. The subs......We report on a direct observation of free-exciton thermalization in quantum-well structures. A narrow energy distribution of free 1s excitons is created in ZnSe-based quantum wells by emission of one LO phonon after optical excitation of the continuum stales with picosecond laser pulses...

  14. Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

    Energy Technology Data Exchange (ETDEWEB)

    Couto, O. D. D., E-mail: odilon@ifi.unicamp.br; Almeida, P. T. de; Santos, G. E. dos; Balanta, M. A. G.; Andriolo, H. F.; Brum, J. A.; Brasil, M. J. S. P.; Iikawa, F. [Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas, 13083-859 Campinas, São Paulo (Brazil); Liang, B. L., E-mail: bliang@cnsi.ucla.edu; Huffaker, D. L. [California NanoSystems Institute, UCLA, Los Angeles, California 90095 (United States)

    2016-08-28

    We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.

  15. Spin polarized low energy electron microscopy of quantum well resonances in Fe films on the Cu-covered W(110) surface.

    Science.gov (United States)

    Wu, Qiang; Altman, M S

    2013-07-01

    Spin polarized low energy electron microscopy has been used to investigate the quantum size effect (QSE) in electron reflectivity from Fe films grown on a pseudomorphic Cu layer on a W(110) surface. Intensity oscillations caused by the QSE as functions of Fe film thickness and incident electron energy identify quantum well resonance conditions in the film. Evaluation of these intensity oscillations using the phase accumulation model provides information on the unoccupied spin polarized band structure in the Fe film above the vacuum level. We also find evidence that the presence of the non-magnetic Cu layer shifts spin polarized quantum well resonances in the Fe layer uniformly downward in energy by 1.1eV compared to Fe/W(110) films without an interface Cu layer, suggesting that the Cu layer gives a small degree of control over the quantum well resonances.

  16. Electrode-induced In-plane Strain Variation in Si Quantum Well

    Science.gov (United States)

    Park, Joonkyu; Ahn, Youngjun; Savage, Donald; Prance, Jonathan; Simmons, Christine; Lagally, Max; Coppersmith, Susan; Holt, Martin; Eriksson, Mark; Evans, Paul

    Silicon quantum devices are often formed in electrostatically defined quantum dots within Si/SiGe heterostructures incorporating a strained silicon quantum well. Structural variations within the quantum well arise from several sources, including the plastic relaxation of the SiGe substrate and stresses arising from electrodes. The residual stress in the electrode causes an elastic bending distortion of the quantum well that modifies the energy by which the two split-off conduction minima in the silicon quantum well are shifted by biaxial strain. We report a synchrotron hard x-ray nanobeam diffraction study of the quantum well distortion (i) near isolated Pd electrodes and (ii) within a complex quantum dot pattern. The strain difference between the two interfaces of the 10-nm-thick silicon quantum well has a magnitude of up to 10-5 in (i) while it is as large as 10-4 in (ii) which is far larger than the strain difference arising from the plastic relaxation of the SiGe substrate. Mechanical analysis using the edge-force model, shows that the residual stress in the Pd electrode was 350 MPa. We expect that similar effects will arise in all quantum electronic systems with metal-electrode-defined devices.

  17. Carrier density dependence of plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure.

    Science.gov (United States)

    Higgins, L J; Karanikolas, V D; Marocico, C A; Bell, A P; Sadler, T C; Parbrook, P J; Bradley, A L

    2015-01-26

    An array of Ag nanoboxes fabricated by helium-ion lithography is used to demonstrate plasmon-enhanced nonradiative energy transfer in a hybrid quantum well-quantum dot structure. The nonradiative energy transfer, from an InGaN/GaN quantum well to CdSe/ZnS nanocrystal quantum dots embedded in an ~80 nm layer of PMMA, is investigated over a range of carrier densities within the quantum well. The plasmon-enhanced energy transfer efficiency is found to be independent of the carrier density, with an efficiency of 25% reported. The dependence on carrier density is observed to be the same as for conventional nonradiative energy transfer. The plasmon-coupled energy transfer enhances the QD emission by 58%. However, due to photoluminescence quenching effects an overall increase in the QD emission of 16% is observed.

  18. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Daisuke [Department of Applied Physics, Tokyo University of Science, Katsushika, 125-8585 Tokyo (Japan); Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby (Denmark); Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya (Japan); Fadil, Ahmed, E-mail: afad@fotonik.dtu.dk; Ou, Yiyu; Kopylov, Oleksii; Ou, Haiyan [Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby (Denmark); Chen, Yuntian, E-mail: yuntian@hust.edu.cn [Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby (Denmark); School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074 Wuhan (China); Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya (Japan); Akasaki, Isamu [Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya (Japan); Akasaki Research Center, Nagoya University, Furo-cho Chikusa, 464-8603 Nagoya (Japan)

    2015-09-15

    We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

  19. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    Directory of Open Access Journals (Sweden)

    Daisuke Iida

    2015-09-01

    Full Text Available We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm2, and a factor of 8.1 at 1 W/cm2. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

  20. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

    Science.gov (United States)

    Jevasuwan, Wipakorn; Boonpeng, Poonyasiri; Panyakeow, Somsak; Ratanathammaphan, Somchai

    2010-11-01

    In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.

  1. Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice; Fu, Wai Yuen; Griffiths, James T.; Massabuau, Fabien C.-P.; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Martin, Tomas L.; Bagot, Paul A. J.; Moody, Michael P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2015-02-16

    Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering.

  2. Swift heavy ion irradiated InGaAs/InP multi quantum wells: Band-structure, interface and surface modifications

    Energy Technology Data Exchange (ETDEWEB)

    Dhamodaran, S. [School of Physics, University of Hyderabad, Central University (P.O.), Hyderabad 500 046 (India); Pathak, A.P. [School of Physics, University of Hyderabad, Central University (P.O.), Hyderabad 500 046 (India)], E-mail: appsp@uohyd.ernet.in; Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute of Nuclear Studies, 05-400 Swierk/Otwock (Poland); Saravanan, G Sai [Gallium Arsenide Enabling Technology Centre, Vignyanakancha (P.O.), Hyderabad 500 069 (India); Khan, S.A.; Avasthi, D.K. [Inter University Accelerator Centre, P. O. Box 10502, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Arora, B.M. [Tata Institute of Fundamental Research, Homibhabha Road, Colaba, Mumbai 400 005 (India)

    2008-02-15

    The band-structure, interface and surface modification by swift heavy ion irradiation of In{sub 0.55}Ga{sub 0.45}As/InP multi quantum wells have been studied using photoluminescence, high resolution X-ray diffraction and atomic force microscopy. Three distinct photoluminescence peaks were observed for as-grown samples at low temperature and at room temperature the peaks merge together. Detailed analysis has been carried out to understand the origin of additional satellite peaks. A peak shift of about 23 nm was observed for irradiated samples after annealing. Highly-ordered satellite peaks were observed in X-ray scans of as-grown and Ag ion irradiated samples. In comparison, Au ion irradiated sample showed stronger interfacial degradation as seen by the diminished satellite peaks. The peak position of the irradiated samples shifted to the compressive side and was broadened in comparison with as-grown samples. The as-grown and annealed samples show smooth surfaces whereas irradiation results in nano-sized dot/island types of structures at the surface. The results are discussed in the light of complementary information provided by these techniques.

  3. Bandgap Engineering of 1300 nm Quantum Dots/Quantum Well Nanostructures Based Devices

    KAUST Repository

    Alhashim, Hala H.

    2016-05-29

    The main objectives of this thesis are to develop viable process and/or device technologies for bandgap tuning of 1300-nm InGaAs/GaAs quantum-dot (QD) laser structures, and broad linewidth 1300-nm InGaAsP/InP quantum well (QW) superluminescent diode structures. The high performance bandgap-engineered QD laser structures were achieved by employing quantum-dot intermixing (QDI) based on impurity free vacancy diffusion (IFVD) technique for eventual seamless active-passive integration, and bandgap-tuned lasers. QDI using various dielectric-capping materials, such as HfO2, SrTiO3, TiO2, Al2O3 and ZnO, etc, were experimented in which the resultant emission wavelength can be blueshifted to ∼ 1100 nm ─ 1200 nm range depending on process conditions. The significant results extracted from the PL characterization were used to perform an extensive laser characterization. The InAs/GaAs quantum-dot lasers with QDs transition energies were blueshifted by ~185 nm, and lasing around ~1070 – 1190 nm was achieved. Furthermore, from the spectral analysis, a simultaneous five-state lasing in the InAs/InGaAs intermixed QD laser was experimentally demonstrated for the first time in the very important wavelength range from 1030 to 1125 nm. The QDI methodology enabled the facile formation of a plethora of devices with various emission wavelengths suitable for a wide range of applications in the infrared. In addition, the wavelength range achieved is also applicable for coherent light generation in the green – yellow – orange visible wavelength band via frequency doubling, which is a cost-effective way of producing compact devices for pico-projectors, semiconductor laser based solid state lighting, etc. [1, 2] In QW-based superluminescent diode, the problem statement lies on achieving a flat-top and ultra-wide emission bandwidth. The approach was to design an inhomogeneous active region with a comparable simultaneous emission from different transition states in the QW stacks, in

  4. Investigation of InGaN/GaN quantum wells for polariton laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Glauser, M.; Rossbach, G.; Cosendey, G.; Levrat, J.; Cobet, M.; Carlin, J.F.; Butte, R.; Grandjean, N. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland); Besbas, J.; Gallart, M.; Gilliot, P. [IPCMS-DON Unite mixte CNRS-ULP (UMR 7504), 67034 Strasbourg Cedex 2 (France)

    2012-05-15

    III-nitride based microcavities (MCs) appear as one of the most promising candidates for the realization of room temperature (RT) polariton laser diodes. The present work focuses on the properties of low In content InGaN/GaN multiple quantum wells (MQWs) in terms of inhomogeneous broadening, exciton localization energy, and plastic strain relaxation. For a small number of such QWs, an inhomogeneous line broadening of 41 meV is reported, which is compatible with strong coupling regime requirements. By contrast when considering an InGaN/GaN MQW set, a high density of defects is reported, which is ascribed to plastic strain relaxation. From the evolution of the inhomogeneous line broadening as a function of the number of QWs probed by microphotoluminescence measurements, it is concluded that for the realization of polariton light-emitting devices the QW number should not go beyond 30 for MC structures grown on FS-GaN substrate relying on InGaN/GaN QWs with an indium content {proportional_to}12-15% and thicknesses of 1.5-2 nm/3 nm for the wells and the barriers, respectively. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Quantum evolution in the regime of quantum wells in a semiclassical island with artificial interface conditions

    Energy Technology Data Exchange (ETDEWEB)

    Mantile, Andrea, E-mail: andrea.mantile@univ-reims.fr [Laboratoire de Mathématiques de Reims, EA-4535 and FR ARC CNRS-3399, Université de Reims Champagne-Ardenne, Moulin de la Housse, BP 1039, 51687 Reims Cedex 2 (France)

    2014-09-15

    We introduce a modified Schrödinger operator where the semiclassical Laplacian is perturbed by artificial interface conditions occurring at the boundaries of the potential's support. The corresponding dynamics is analyzed in the regime of quantum wells in a semiclassical island. Under a suitable energy constraint for the initial states, we show that the time propagator is stable with respect to the non-self-adjont perturbation, provided that this is parametrized through infinitesimal functions of the semiclassical parameter “h.” It has been recently shown that h-dependent artificial interface conditions allow a new approach to the adiabatic evolution problem for the shape resonances in models of resonant heterostructures. Our aim is to provide with a rigorous justification of this method.

  6. An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

    Science.gov (United States)

    Ahia, C. C.; Tile, N.; Urgessa, Z. N.; Botha, J. R.; Neethling, J. H.

    2017-01-01

    In this work, the near-infrared photoluminescence (PL) of InSb/GaSb QD structures grown on GaSb substrate (2° off (100)) using atmospheric pressure Metalorganic Vapor Phase Epitaxy is investigated. The structures are analyzed before capping and after capping using scanning probe microscopy and high resolution transmission electron microscopy (HRTEM), respectively. At 10 K, with an excitation power of 2 mW, a PL peak at ∼ 732 meV is observed. Upon an increase in laser power to 120 mW, a blue shift of ∼ 8 meV is noticed. This emission typically persists up to 60-70 K, after which it becomes weak. An SPM analysis of the size distribution of uncapped dots reveals a mono-modal distribution with an average density of ∼ 5×1010 cm-2. However, a HRTEM investigation of the capped dots reveals the formation of an InGaSb quantum well-like structure, ∼ 10 nm thick, which gives rise to the PL signal mentioned above.

  7. Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingmin, E-mail: konglm@qq.com [School of Marine Science and Technology, Zhejiang Ocean University, Zhoushan 316000 (China); Sun, Wei [SEM School of Electromechanical Engineering, Weifang Engineering Vocational College, Qingzhou 262500 (China); Feng, Zhe Chuan, E-mail: zcfeng@nut.edu.tw [Institute of Photonics and Optoelectronics, Department of Electrical Engineering, and Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei 106-17, Taiwan (China); Xie, Sheng [School of Electronic and Information Engineering, Tianjin University, Tianjin 300072 (China); Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian [Department of Physics, Zhejiang Ocean University, Zhoushan 316000 (China); Wu, Zhengyun [Department of Physics, Xiamen University, Xiamen 361005 China (China)

    2014-07-01

    Two kinds of self-assembled quantum dots (QDs) embedded within InGaAs/GaAs quantum wells were grown by molecular beam epitaxy: one was capped with an InAlAs strain reducing (SR) layer, while the other was not. Their emission dynamics was investigated by time-resolved and temperature dependent (TD) photoluminescence (PL) measurements. A significant redshift can be observed in the emission peak position of InAs QDs with thin InAlAs SR cap layer, which results from SR effects. Different behaviors of the integrated PL intensity for the samples with or without InAlAs layer may be ascribed to the reduced carrier transition at higher temperature for the higher energy barrier of the InAlAs layer, and the TD mode of carrier migration. The PL decay time of quantum dots grown with InAlAs layer was much longer than that without the layer, which implies that the InAlAs layer with higher energy barrier may enhance the quantum restriction of carriers in InAs QDs. These observations are discussed from the viewpoint of strain compensation and potential barrier variation with SR layers. Our experiments also demonstrate that the main mode of carrier migration is quantum tunneling effect at lower temperature, while it is quantum transition at higher temperature. The results demonstrate the importance of InAlAs SR layer for the optical quality of InAs QDs. - Highlights: • InAs quantum dots (QDs) were grown on GaAs. • A thin InAlAs layer was grown on InAs QDs. • Temperature dependent photoluminescence (PL) and time-resolved PL were carried out. • Both a redshift and a double exponential decay of PL emission were generated by the InAlAs layer.

  8. Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.

    Science.gov (United States)

    Ghetmiri, Seyed Amir; Zhou, Yiyin; Margetis, Joe; Al-Kabi, Sattar; Dou, Wei; Mosleh, Aboozar; Du, Wei; Kuchuk, Andrian; Liu, Jifeng; Sun, Greg; Soref, Richard A; Tolle, John; Naseem, Hameed A; Li, Baohua; Mortazavi, Mansour; Yu, Shui-Qing

    2017-02-01

    A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

  9. Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    YANG Xiao-Hong; HAN Qin; NI Hai-Qiao; HUANG She-Song; DU Yun; PENG Hong-Ling; XIONG Yong-Hua; NIU Zhi-Chuan; WU Rong-Han

    2006-01-01

    A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation.The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.

  10. Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

    Science.gov (United States)

    Chemla, D. S.; Bar-Joseph, I.; Klingshirn, C.; Miller, D. A. B.; Kuo, J. M.

    1987-03-01

    Absorption switching in a semiconductor quantum well by electrically varying the charge density in the quantum well conducting channel of a selectively doped heterostructure transistor is reported for the first time. The phase-space absorption quenching (PAQ) is observed at room temperature in an InGaAs/InAlAs grown on InP FET, and it shows large absorption coefficient changes with relatively broad spectral bandwidth. This PAQ is large enough to be used for direct optical determination of the logic state of the FET.

  11. InGaN/GaN laser diode characterization and quantum well number effect

    Institute of Scientific and Technical Information of China (English)

    S. M. Thahab; H. Abu Hassan; Z. Hassan

    2009-01-01

    The effect of quantum well number on the quantum efficiency and temperature characteristics of In-GaN/GaN laser diodes (LDs) is determined and investigated. The 3-nm-thick In0.13Ga0.87TN wells and two 6-nm-thick GaN barriers are selected as an active region for Fabry-Perot (FP) cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency (DQE), and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.

  12. Optical Absorption, Emission, and Modulation in Iii-V Semiconductor Quantum Well Structures

    Science.gov (United States)

    Shank, Steven Marc

    An experimental study of topics relating to optical absorption, emission, and modulation in III-V semiconductor GaAs/AlGaAs quantum well structures is presented. Several novel quantum well structures are examined and evaluated for use in electrooptic modulators, laser diodes, and monolithically integrated laser diodes and passive waveguides. The design of the epitaxial structures, the molecular beam epitaxy growth, the optical characterization of the wafers, the fabrication of the wafers into basic optoelectronic devices (electrooptic waveguides, laser diodes, and segmented laser diodes), and the characterization of these devices are described. The quantum confined Stark effect and its influence on the electrooptic properties of quantum wells are described. In particular, electroabsorption and electrobirefringence in (111)B quantum wells are investigated. This quantum well system is chosen due to the larger heavy hole effective mass compared to standard (100) quantum wells. It is demonstrated that electroabsorption and electrobirefringence are enhanced in (111)B quantum wells, which agrees with theoretical predictions based on the heavy hole mass anisotropy. Computer simulations of the quantum confined Stark effect in asymmetric quantum well structures are described. It is demonstrated that asymmetric quantum wells can exhibit enhanced red shifts of the absorption edge, and blue shifts of the absorption edge under an applied reverse bias. An experimental investigation of laser diodes with asymmetric quantum well active regions is described. An evaluation of the blue shift effect on the interband absorption at the laser wavelength is made and related to the efficiency of these structures for monolithic integration with passive waveguides. The optical properties of n-type modulation doped quantum wells are described. It is shown that the interband absorption at the spontaneous emission peak can be greatly reduced compared to undoped quantum wells. N-type modulation

  13. Very high efficiency photovoltaic cells based on fully organic multiple quantum wells. Quarterly technical progress report, 15 February 1995--15 May 1995

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, S R [Princeton Univ., NJ (United States)

    1997-03-01

    The principal project objective is to demonstrate relatively high solar conversion efficiency using extremely low-cost, thin-film technology based on crystalline organic multiple quantum well (MQW) photovoltaic cells. The authors base their work on recent observations both in the laboratory and elsewhere that have indicated the quantum efficiency of organic photoconductors based on vacuum-deposited thin films can be increased by at least two orders of magnitude (to at least 10%) if the organic films are grown in a highly ordered manner, and if organic multiple quantum wells are used in the absorption region. The authors are investigating the physical origin of this phenomenon, and they are growing thin-film MQW cells that demonstrate relatively high quantum efficiencies to determine the practicality of crystalline organic thin-film cells for solar power applications. The investigations are based on a unique, ultrahigh-vacuum organic molecular beam deposition system in the laboratory.

  14. Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures

    DEFF Research Database (Denmark)

    Duggen, Lars; Willatzen, Morten; Lassen, Benny

    2008-01-01

    A three-layered zinc-blende quantum-well structure is analyzed subject to both static and dynamic conditions for different crystal growth directions taking into account piezoelectric effects and lattice mismatch. It is found that the strain component Szz in the quantum-well region strongly depend...

  15. The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation

    Science.gov (United States)

    Jelic, V.; Marsiglio, F.

    2012-01-01

    The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…

  16. The Double-Well Potential in Quantum Mechanics: A Simple, Numerically Exact Formulation

    Science.gov (United States)

    Jelic, V.; Marsiglio, F.

    2012-01-01

    The double-well potential is arguably one of the most important potentials in quantum mechanics, because the solution contains the notion of a state as a linear superposition of "classical" states, a concept which has become very important in quantum information theory. It is therefore desirable to have solutions to simple double-well potentials…

  17. High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge-on-Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Bietti, Sergio; Sanguinetti, Stefano [Dipartimento di Scienza dei Materiali, Milano (Italy); L-NESS, Universitaedi Milano Bicocca, Milano (Italy); Cavigli, Lucia; Abbarchi, Marco; Vinattieri, Anna; Gurioli, Massimo [Dipartimento di Fisica, LENS, Firenze (Italy); CNISM, Universitaedi Firenze, Firenze (Italy); Fedorov, Alexey; Cecchi, Stefano; Isa, Fabio; Isella, Giovanni [CNISM, L-NESS, Como (Italy); Dipartimento di Fisica del Politecnico di Milano, Como (Italy)

    2012-02-15

    We report on the growth and optical characterization by macro and micro photoluminescence measurements of high optical quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Si substrates. The quantum nanostructures show optical performances comparable to those achievable with the most advanced realized on GaAs substrates. The adopted growth procedures show also the possibility to fabricate the active layer maintaining a low thermal budget compatible with back-end integration of the fabricated materials on integrated circuits. We demonstrate the possibility to embed GaAs nanostructured devices such as intersubband detectors and single quantum emitters on Si substrates. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Localized excitons in In sub x Ga sub 1 sub - sub x N/GaN quantum well structure

    CERN Document Server

    Ryu, M Y; Park, S W; Yu, P W; Oh, E S; Park, Y J; Park, H S; Kim, T I

    1998-01-01

    Photoluminescence (PL) photoreflectance (PR) have been employed to study the optical transitions of In sub x Ga sub 1 sub - sub x N/GaN quantum well (QW) structures grown by metal-organic chemical vapor deposition (MOCVD). The main Pl peak at 2.895 eV is attributed to the excitons localized at trap centers, which originate from the In-rich region within the well. Several emission bands on both sides of the main peak are attributed to the interference fringe effects and the recombination of excitons localized at several levels in the In sub 0 sub . sub 1 sub 8 sub 3 Ga sub 0 sub . sub 8 sub 1 sub 7 N well. The PL peak at 3.040 eV is ascribed to the lowest n=1 quantized transition which agrees well the calculated result.

  19. Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors

    KAUST Repository

    Ivanov, Ts

    2012-03-29

    A detailed study of InAs/InGaAs quantum dots in quantum well (DWELL) structures grown on GaAs substrates for infrared photodetectors was performed using surface photovoltage (SPV) spectroscopy. Three types of samples were investigated: as-grown, and annealed with dielectric coating SiO 2 or SiN. The annealing resulted in intermixing of the material components. The amplitude and phase SPV spectra were measured at room temperature under various experimental conditions. The comparison of the SPV with the photoluminescence (PL) spectra allows one to conclude that the spectral features are due to optical transitions in the DWELL structure. The blueshift observed of these features in the intermixed samples implies that the energy levels responsible for the transitions change correspondingly due to the intermixing process. The interface band-bending in the samples and the mechanisms of the carrier dynamics were determined by a comparative analysis of the SPV amplitude and phase spectra, using our vector model for representation of the SPV signal. © Published under licence by IOP Publishing Ltd.

  20. Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

    Science.gov (United States)

    Riuttanen, L.; Kivisaari, P.; Svensk, O.; Vasara, T.; Myllys, P.; Oksanen, J.; Suihkonen, S.

    2015-03-01

    Due to their potential to improve the performance of light-emitting diodes (LEDs), novel device structures based on nanowires, surface plasmons, and large-area high-power devices have received increasing amount of interest. These structures are almost exclusively based on the double hetero junction (DHJ) structure, that has remained essentially unchanged for decades. In this work we study a III-nitride diffusion injected light-emitting diode (DILED), in which the active region is located outside the pn-junction and the excitation of the active region is based on bipolar diffusion of charge carriers. This unorthodox approach removes the need of placing the active region in the conventional current path and thus enabling carrier injection in device structures, which would be challenging to realize with the conventional DHJ design. The structure studied in this work is has 3 indium gallium nitride / gallium nitride (InGaN/GaN) quantum wells (QWs) under a GaN pn-junction. The QWs are grown at diferent growth temperatures for obtaining distinctive luminescence peaks. This allows to obtain knowledge on the carrier diffusion in the structure. When the device is biased, all QWs emit light indicating a significant diffusion current into the QW stack.

  1. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform

    Science.gov (United States)

    Mączko, H. S.; Kudrawiec, R.; Gladysiewicz, M.

    2016-09-01

    It is shown that compressively strained Ge1‑xSnx/Ge quantum wells (QWs) grown on a Ge substrate with 0.1 ≤ x ≤ 0.2 and width of 8 nm ≤ d ≤ 14 nm are a very promising gain medium for lasers integrated with an Si platform. Such QWs are type-I QWs with a direct bandgap and positive transverse electric mode of material gain, i.e. the modal gain. The electronic band structure near the center of Brillouin zone has been calculated for various Ge1‑xSnx/Ge QWs with use of the 8-band kp Hamiltonian. To calculate the material gain for these QWs, occupation of the L valley in Ge barriers has been taken into account. It is clearly shown that this occupation has a lot of influence on the material gain in the QWs with low Sn concentrations (Sn  15%). However, for QWs with Sn > 20% the critical thickness of a GeSn layer deposited on a Ge substrate starts to play an important role. Reduction in the QW width shifts up the ground electron subband in the QW and increases occupation of the L valley in the barriers instead of the Γ valley in the QW region.

  2. Coulomb correlation effects and density dependence of radiative recombination rates in polar AlGaN quantum wells

    Science.gov (United States)

    Rupper, Greg; Rudin, Sergey; Bertazzi, Francesco; Garrett, Gregory; Wraback, Michael

    2013-03-01

    AlGaN narrow quantum wells are important elements of deep-ultraviolet light emitting devices. The electron-hole radiative recombination rates are important characteristics of these nanostructures. In this work we evaluated their dependence on carrier density and lattice temperature and compared our theoretical results with the experimentally determined radiative lifetimes in the c-plane grown AlGaN quantum wells. The bands were determined in the k .p approximation for a strained c-plane wurtzite quantum well and polarization fields were included in the model. In order to account for Coulomb correlations at relatively high densities of photo-excited electron-hole plasma and arbitrary temperature, we employed real-time Green's function formalism with self-energies evaluated in the self-consistent T-matrix approximation. The luminescence spectrum was obtained from the susceptibility by summing over scattering in-plane directions and polarization states. The recombination coefficient was obtained from the integrated photo-luminescence. The density dependence of the radiative recombination rate shows effects of strong screening of the polarization electric field at high photo-excitation density.

  3. Two-dimensional double-quantum spectroscopy: peak shapes as a sensitive probe of carrier interactions in quantum wells

    CERN Document Server

    Tollerud, Jonathan O

    2016-01-01

    We identify carrier scattering at densities below which it has previously been observed in semiconductor quantum wells. These effects are evident in the peakshapes of 2D double-quantum spectra, which change as a function of excitation density. At high excitation densities ($\\geq 10^{9}$ carriers/,cm$^{-2}$) we observe untilted peaks similar to those reported in previous experiments. At low excitation densities (<$10^{8}$ carriers cm$^{-2}$) we observe narrower, tilted peaks. Using a simple simulation, we show that tilted peak-shapes are expected in double-quantum spectra when inhomogeneous broadening is much larger than homogeneous broadening, and that fast pure-decoherence of the double-quantum coherence can obscure this peak tilt. These results show that carrier interactions are important at lower densities than previously expected, and that the `natural' double-quantum peakshapes are hidden by carrier interactions at the excitation densities typically used. Furthermore, these results demonstrate that an...

  4. In-situ Curvature Monitoring and X-Ray Diffraction Study of InGaAsP/InGaP Quantum Wells

    Energy Technology Data Exchange (ETDEWEB)

    Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Dippo, Patricia C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Sayed, Islam E. M. [North Carolina State University; Colter, Peter C. [North Carolina State University

    2017-06-02

    The use of InGaAsP/InGaP quantum well structures is a promising approach for subcells in next generation multi-junction devices due to their tunable bandgap (1.50-1.80 eV) and for being aluminum-free. Despite these potentials, the accumulation of stress during the growth of these structures and high background doping in the quantum well region have previously limited the maximum number of quantum wells and barriers that can be included in the intrinsic region and the sub-bandgap external quantum efficiency to less than 30.0%. In this paper, we report on the use of in-situ curvature monitoring by multi-beam optical stress (MOS) sensor measurements during the growth of this quantum well structure to monitor the stress evolution in these thin films. A series of In0.32Ga0.68AsP/In0.49Ga0.51P quantum wells with various arsine to phosphine ratios have been analyzed by in-situ curvature monitoring and X-ray diffraction (XRD) to obtain nearly strain-free lattice matched structures. Sharp interfaces, as indicated by the XRD fringes, have been achieved by using triethyl-gallium and trimethyl-gallium as gallium precursors in InGaAsP and InGaP, respectively, with constant flows of trimethyl-indium and phosphine through the entire quantum well structure. The effect of the substrate miscut on quantum well growth was compared and analyzed using XRD, photoluminescence and time resolved photoluminescence. A 100 period quantum well device was successfully grown with minimal stress and approximately flat in-situ curvature.

  5. High-power quantum cascade lasers (QCLs) grown by GasMBE

    Science.gov (United States)

    Razeghi, Manijeh; Slivken, Steven

    2003-10-01

    This paper is a brief summary of the technological development and state-of-the-art performance of quantum cascade lasers produced at the Centre for Quantum Devices. Laser design will be discussed, as well as experimental details of device fabrication. Recent work has focused on the development of high peak and average power QCLs emitting at room temperature and above. Scaling of the output is demonstrated by increasing the number of emitting regions in the waveguide core. At λ = 9 μm, over 7 W of peak power has been demonstrated at room temperature for a single diode, with an average power of 300 mW at 6% duty cycle. At shorter wavelengths, laser development includes the use of highly strain-balanced heterostructures in order to maintain a high conduction band offset and minimize leakage current. At λ = 6 μm, utilizing a high reflective coating and epilayer-down mounting of the laser, we have demonstrated 225 mW of average power from a single facet at room temperature. Lastly, these results are put in perspective of other reported results and possible future directions are discussed.

  6. The over-barrier resonant states and multi-channel scattering by a quantum well

    Directory of Open Access Journals (Sweden)

    Alexander F. Polupanov

    2008-06-01

    Full Text Available We demonstrate an explicit numerical method for accurate calculation ofthe analytic continuation of the scattering matrix, describing the multichannelscattering by a quantum well, to the unphysical region of complexvalues of the energy. Results of calculations show that one or severalpoles of the S-matrix exist, corresponding to the over-barrier resonantstates that are critical for the effect of the absolute reflection at scatteringof the heavy hole by a quantum well in the energy range where only theheavy hole may propagate over barriers in a quantum-well structure.Light- and heavy-hole states are described by the Luttinger Hamiltonianmatrix. The qualitative behaviour of the over-barrier scattering andresonant states is the same at variation of the shape of the quantum-wellpotential, however lifetimes of resonant states depend drastically on theshape and depth of a quantum well.

  7. Role of spatial dispersion of electromagnetic wave at its transmission through quantum well

    CERN Document Server

    Korovin, L I; Contreras-Solorio, D A; Pavlov, S T

    2001-01-01

    The theory on the light transmission through the quantum well, placed in the strong magnetic field, perpendicular to the well plane, wherein the interzone transitions take place, is developed. The light wave length is assumed to be comparable with the well width. The formulae for reflection, absorption and transmission wherein the spatial dispersion of the monochromatic light wave and the difference in the reflection indices of the quantum well and the barrier are accounted for, are obtained. It is shown that accounting for these factors effects the reflection most of all, because along with the reflection, caused by the interzonal transitions in the quantum well there appears the additional reflection from the well boundaries. The most radical changes in the reflection take place in the case, when the reverse radiation lifetime of the excited state in the quantum well is shorter as compared to the reverse non-radiation lifetime

  8. Effect of growth interruption and strain buffer layer on PL performance of AlGaAs/GaAs/InGaAs quantum well for 1065 nm wavelength lasers

    Institute of Scientific and Technical Information of China (English)

    PAN Jiaoqing; HUANG Baibiao; ZHANG Xiaoyang; YUE Jinshun; YU Yongqin; WEI Jiyong

    2004-01-01

    Strained InGaAs/GaAs quantum well (QW) was grown by low-pressure metallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer were introduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. Good PL results were obtained under condition of growth an interruption of 10 s combined with a moderate strain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed into devices. Broad area lasers (1130 μm × 500 μm) show very low threshold current densities (43 A/cm2) and high slop efficiency (0.34 W/A, per facet).

  9. Observation of a fractional quantum Hall state at v=1/4 in a wide GaAs quantum well.

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Wei; Tsui, Daniel Chee (Princeton University, Princeton, NJ); Baldwin, K. W. (Bell Labs, Lucent Technologies, Murray Hill, NJ); West, Ken W. (Bell Labs, Lucent Technologies, Murray Hill, NJ); Pfeiffer, Loren N.; Luhman, D. R. (Princeton University, Princeton, NJ)

    2008-10-01

    We report the observation of an even-denominator fractional quantum Hall state at {nu}=1/4 in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of n{sub e}=2.55 x 10{sup 11} cm{sup -2}. We have performed transport measurements at T{approx}35 mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at {nu}=1/4. Upon tilting the sample to an angle of {theta}=20.3{sup o} a clear fractional quantum Hall state emerges at {nu}=1/4 with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.

  10. Anisotropic emission and photon-recycling in strain-balanced quantum well solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Cabrera, C. I.; Enciso, A.; Contreras-Solorio, D. A. [Academic Unit of Physics, Autonomous University of Zacatecas, Czda. Solidaridad y Paseo La Bufa S/N, 98060 Zacatecas, Zac. (Mexico); Rimada, J. C. [Solar Cell Laboratory, Institute of Materials Science and Technology (IMRE), University of Havana, Zapata y G, 10400 La Habana (Cuba); Hernandez, L., E-mail: luisman@fisica.uh.cu [Faculty of Physics, University of Havana, Colina Universitaria. 10400 La Habana (Cuba); Connolly, J. P. [Nanophotonics Technology Center, Universidad Politécnica de Valencia, 46022 Valencia (Spain)

    2014-04-28

    Strain-balanced quantum well solar cells (SB-QWSCs) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. Anisotropy arises from a splitting of the valence band due to compressive strain in the quantum wells, suppressing a transition which contributes to emission from the edge of the quantum wells. We have studied both the emission light polarized in the plane perpendicular (TM) to the quantum well which couples exclusively to the light hole transition and the emission polarized in the plane of the quantum wells (TE) which couples mainly to the heavy hole transition. It was found that the spontaneous emission rates TM and TE increase when the quantum wells are deeper. The addition of a distributed Bragg reflector can substantially increase the photocurrent while decreasing the radiative recombination current. We have examined the impact of the photon recycling effect on SB-QWSC performance. We have optimized SB-QWSC design to achieve single junction efficiencies above 30%.

  11. Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells.

    Science.gov (United States)

    Hatke, A T; Liu, Yang; Magill, B A; Moon, B H; Engel, L W; Shayegan, M; Pfeiffer, L N; West, K W; Baldwin, K W

    2014-06-20

    In high magnetic fields, two-dimensional electron systems can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect, as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau-filling termination of the fractional quantum Hall effect series but also within integer quantum Hall effects. Here we present microwave spectroscopy studies of wide quantum wells that clearly reveal two distinct solid phases, hidden within what in d.c. transport would be the zero diagonal conductivity of an integer quantum-Hall-effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid of ordinary (quasi) electrons or holes.

  12. Impurity-assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation

    Directory of Open Access Journals (Sweden)

    Ivan S. Makhov

    2016-12-01

    Full Text Available The paper presents the results of an experimental study of impurity-assisted photoluminescence in the far- (terahertz and near-infrared spectral ranges in n-GaAs/AlGaAs quantum well structures with different well widths under interband photoexcitation of electron–hole pairs. The optical electron transitions between the first electron subband and donor ground state as well as between excited and ground donor states were revealed in the far-infrared photoluminescence spectra. Observation of these optical electron transitions became possible because of the depopulation of the donor ground state in the quantum well due to the non-equilibrium charge carrier radiative transitions from the donor ground state to the first heavy hole subband. The opportunity to tune the terahertz radiation wavelength in structures with doped quantum wells by changing the quantum well width was demonstrated experimentally.

  13. Radiation Effects in Nanostructures: Comparison of Proton Irradiation Induced Changes on Quantum Dots and Quantum Wells

    Science.gov (United States)

    Leon, R.; Swift, G.; Magness, B.; Taylor, W.; Tang, Y.; Wang, K.; Dowd, P.; Zhang, Y.

    2000-01-01

    Successful implementation of technology using self-forming semiconductor Quantum Dots (QDs) has already demonstrated that temperature independent Dirac-delta density of states can be exploited in low current threshold QD lasers and QD infrared photodetectors.

  14. Interaction induced dephasing of excitons in wide ZnSe/ZnMgSe single quantum wells

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Schätz, A.; Maier, R.;

    1998-01-01

    The dephasing of excitons in wide ZnSe/Zn0.94Mg0.06Se single quantum wells (SQW) is investigated by spectrally resolved, time integrated four-wave mixing (FWM). Simultaneous excitation of Is center-of-mass quantized heavy-hole and light-hole excition states leads to pronounced quantum beats. Pola...

  15. Ag colloids and arrays for plasmonic non-radiative energy transfer from quantum dots to a quantum well

    CERN Document Server

    Murphy, Graham P; Higgins, Luke J; Karanikolas, Vasilios D; Wilson, Keith M; Coindreau, Jorge A Garcia; Zubialevich, Vitaly Z; Parbrook, Peter J; Bradley, A Louise

    2016-01-01

    Ag nanoparticles in the form of colloids and ordered arrays are used to demonstrate plasmon-mediated non-radiative energy transfer from quantum dots to quantum wells with varying top barrier thicknesses. Plasmon-mediated energy transfer efficiencies of up to ~25% are observed with the Ag colloids. The distance dependence of the plasmon-mediated energy transfer is found to follow the same d^{-4} dependence as the direct quantum dot to quantum well energy transfer. There is also evidence for an increase in the characteristic distance of the interaction, thus indicating that it follows a F\\"orster-like model with the Ag nanoparticle-quantum dot acting as an enhanced donor dipole. Ordered Ag nanoparticle arrays display plasmon-mediated energy transfer efficiencies up to ~21%. To explore the tunability of the array system, two arrays with different geometries are presented. It is demonstrated that changing the geometry of the array allows a transition from overall quenching of the acceptor quantum well emission to...

  16. Chirping of an optical transition by an ultrafast acoustic soliton train in a semiconductor quantum well.

    Science.gov (United States)

    Scherbakov, A V; van Capel, P J S; Akimov, A V; Dijkhuis, J I; Yakovlev, D R; Berstermann, T; Bayer, M

    2007-08-03

    Acoustic solitons formed during the propagation of a picosecond strain pulse in a GaAs crystal with a ZnSe/ZnMgSSe quantum well on top lead to exciton resonance energy shifts of up to 10 meV, and ultrafast frequency modulation, i.e., chirping, of the exciton transition. The effects are well described by a theoretical analysis based on the Korteweg-de Vries equation and accounting for the properties of the excitons in the quantum well.

  17. Nonadiabatic quantum state control of many bosons in few wells

    DEFF Research Database (Denmark)

    Tichy, Malte C.; Kock Pedersen, Mads; Mølmer, Klaus;

    2013-01-01

    We present a fast scheme for arbitrary unitary control of interacting bosonic atoms in a double well. Assuming fixed interwell tunneling rate and intrawell interaction strength, we control the many-atom state by a discrete sequence of shifts of the single-well energies. For strong interactions...

  18. On the binding energies of excitons in polar quantum well structures in a weak electric field

    Institute of Scientific and Technical Information of China (English)

    Wu Yun-Feng; Liang Xi-Xia; K. K. Bajaj

    2005-01-01

    The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed.The results for GaAs/AlGaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.

  19. Simulation of quantum-well slipping effect on optical bandwidth in transistor laser

    Institute of Scientific and Technical Information of China (English)

    Hassan Kaatuzian; Seyed Iman Taghavi

    2009-01-01

    An optical bandwidth analysis of a quantum-well(16 nm)transistor laser with 150-μm cavity length using a charge control model is reported in order to modify the quantum-well location through the base region.At constant bias current,the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.No remarkable resonance peak,limiting factor in laser diodes,is observed during this modification in transistor laser structure.The method can be utilized for transistor laser structure design.

  20. Theoretical Study on Absorption of Magnetically Tunable Terahertz Quantum- Well Photodetectors

    Institute of Scientific and Technical Information of China (English)

    CHEN Yu-Ling; GUO Xu-Guang; CAO Jun-Cheng

    2006-01-01

    Because of the Zeeman splitting effect in diluted semiconductor (Zn,Cd,Mn)Se, the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells can be adjusted by magnetic field effectively. Within the effective-mass approximation, the conduction electronic structure and the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells subjected to in-plane magnetic Gelds are investigated. Our theoretical results show that it is possible to use the ZnSe/(Zn,Cd,Mn)Se quantum well as magnetically tunable terahertz photodetectors.

  1. A new switching characteristics of highly doped multi-quantum well

    CERN Document Server

    Song, C K

    1999-01-01

    A new type of hysteretic current-voltage characteristics, which switched from a low conductance off-state into a high conductance on-state at a threshold voltage and the high conductance state was sustained even when the bias voltage reduced below the threshold voltage, was experimentally observed for the highly doped multi-quantum well structure. The characteristics were attributed to confinement of electrons and impact ionization of the confined electrons out of the quantum wells. The test devices employing 10 periods of quantum wells were fabricated by using AlGaAs/GaAs semiconductor heterostructure and I-V characteristics were examined.

  2. Broadband near-infrared to visible upconversion in quantum dot-quantum well heterostructures (Conference Presentation)

    Science.gov (United States)

    Teitelboim, Ayelet; Oron, Dan

    2016-09-01

    Upconversion (UC) is a nonlinear process in which two, or more, long wavelength photons are converted to a shorter wavelength photon. This process is based on sequential absorption of two or more photons, involving metastable, long lived intermediate energy states, thus is not restricted to upconversion of coherent laser radiation as a non-coherent process. Hence, requirements for UC processes are long lived excited states, a ladder like arrangement of energy levels and a mechanism inhibiting cooling of the hot charge carrier. UC holds great promise for bioimaging, enabling spatially resolved imaging in a scattering specimen and for photovoltaic devices as a mean to surpass the Shockley-Queisser efficiency limit. Here, we present a novel luminescence upconversion nano-system based on colloidal semiconductor double quantum dots, consisting of a NIR-emitting component and a visible emitting component separated by a tunneling barrier in a spherical onion-like geometry. These dual near-infrared and visible emitting core/shell/shell PbSe/CdSe/CdS nanocrystals are shown to upconvert a broad range of NIR wavelengths to visible emission at room temperature, covering a spectral range where there are practically no alternative upconversion systems. The synthesis is a three-step process, which enables versatility and tunability of both the visible emission color and the NIR absorption edge. Using this method one can achieve a range of desired upconverted emission peak positions with a suitable NIR band gap. The physical mechanism for upconversion in this structure, as well as possible extensions and improvements will be discussed. 1 (1) Teitelboim, A.; Oron, D. ACS Nano 2015, acsnano.5b05329.

  3. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Anufriev, Roman; Chauvin, Nicolas, E-mail: nicolas.chauvin@insa-lyon.fr; Bru-Chevallier, Catherine [Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, INSA-Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne (France); Khmissi, Hammadi [Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences, Avenue de l' environnement, 5019 Monastir (Tunisia); Naji, Khalid; Gendry, Michel [Université de Lyon, Institut des Nanotechnologies de Lyon (INL)-UMR5270-CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France); Patriarche, Gilles [Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, route de Nozay, 91460 Marcoussis (France)

    2014-05-05

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures.

  4. Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

    Science.gov (United States)

    Anufriev, Roman; Chauvin, Nicolas; Khmissi, Hammadi; Naji, Khalid; Patriarche, Gilles; Gendry, Michel; Bru-Chevallier, Catherine

    2014-05-01

    We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures.

  5. Simulation of a broadband nano-biosensor based on an onion-like quantum dot-quantum well structure

    Energy Technology Data Exchange (ETDEWEB)

    Absalan, H; SalmanOgli, A; Rostami, R

    2013-07-31

    The fluorescence resonance energy transfer is studied between modified quantum-dots and quantum-wells used as a donor and an acceptor. Because of the unique properties of quantum dots, including diverse surface modification flexibility, bio-compatibility, high quantum yields and wide absorption, their use as nano-biosensors and bio-markers used in diagnosis of cancer is suggested. The fluorescence resonance energy transfer is simulated in a quantum dot-quantum well system, where the energy can flow from donor to acceptor. If the energy transfer can be either turned on or off by a specific interaction, such as interaction with any dyes, a molecular binding event or a cleavage reaction, a sensor can be designed (under assumption that the healthy cells have a known effect or unyielding effect on output parameters while cancerous cells, due to their pandemic optical properties, can impact the fluorescence resonance energy transfer parameters). The developed nano-biosensor can operate in a wide range of wavelengths (310 - 760 nm). (laser applications in biology and medicine)

  6. Stretchable Persistent Spin Helices in GaAs Quantum Wells

    Science.gov (United States)

    Dettwiler, Florian; Fu, Jiyong; Mack, Shawn; Weigele, Pirmin J.; Egues, J. Carlos; Awschalom, David D.; Zumbühl, Dominik M.

    2017-07-01

    the extracted spin-diffusion lengths and decay times show a significant enhancement near α =β . Since within the continuous-locking regime quantum transport is diffusive (2D) for charge while ballistic (1D) for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ˜8 - 25 μ m between solid-state spin qubits, where the spin diffusion length for α ≠β is an order of magnitude smaller.

  7. Stretchable Persistent Spin Helices in GaAs Quantum Wells

    Directory of Open Access Journals (Sweden)

    Florian Dettwiler

    2017-07-01

    sufficiently weak so that the extracted spin-diffusion lengths and decay times show a significant enhancement near α=β. Since within the continuous-locking regime quantum transport is diffusive (2D for charge while ballistic (1D for spin and thus amenable to coherent spin control, stretchable PSHs could provide the platform for the much heralded long-distance communication ∼8–25  μm between solid-state spin qubits, where the spin diffusion length for α≠β is an order of magnitude smaller.

  8. Thermal degradation of InGaN/GaN quantum wells in blue laser diode structure during the epitaxial growth

    Science.gov (United States)

    Zhou, Kun; Ikeda, Massao; Liu, Jianping; Li, Zengcheng; Ma, Yi; Gao, Songxin; Ren, Huaijin; Tang, Chun; Sun, Yi; Sun, Qian; Yang, Hui

    2016-01-01

    True blue nitride laser diodes (LDs) are one of the key challenges for epitaxy of nitrides due to the variety of its potential applications. The growth of high temperature p-type layers may cause thermal degradation of the InGaN-based multiple quantum wells (MQWs) active region because of the annealing effect, since thick p-AlGaN layers were introduced as upper optical cladding layer in the LDs. The degradation was found in blue LDs grown on both Si and sapphire substrate. In the degraded LD wafer samples, "Dark" non-radiative MQWs regions were observed by microscopic photoluminescence. Formation of metallic indium precipitates and voids in these regions were confirmed by transmission electron microscope. The thermal degradation is attributed to the decomposition of indium-rich InGaN materials in the MQWs. The indium-rich InGaN materials were supposed to be accumulated at dislocation related V-shaped pits according to the surface morphology by atomic force microscope. To obtain high quality InGaN-based MQWs, one of the four methods can be introduced to eliminate the degradation. A lower thermal budget can suppress the decomposition of indium-rich InGaN clusters by a lower p-cladding layer growth temperature. The use of low threading dislocation density substrates results in low density indium-rich InGaN clusters. The introducing of H2 carrier gas during the quantum barriers growth or a 2-step growth scheme with a higher quantum barrier growth temperature etches off the indium-rich InGaN clusters. The suppression of the thermal degradation in the MQWs makes it possible for lasing of blue laser diode directly grown on Si.

  9. High Speed Quantum-Well Optoelectronic Devices by MBE

    Science.gov (United States)

    1989-05-01

    26 Aline width. Broad area contacts were deposited, and laser fabrication and testing as well as photoconductivity measurements were carried out. Our...alignment to obtain lateral current confinement. In order to simplify the laser fabrication , a possible approach is to design a structure which can employ the

  10. Electromagnetically induced transparency due to intervalence band coherence in a GaAs quantum well.

    Science.gov (United States)

    Phillips, Mark; Wang, Hailin

    2003-05-15

    We demonstrate electromagnetically induced transparency in the transient optical response in a GaAs quantum well by using the nonradiative coherence between the heavy-hole and the light-hole valence bands.

  11. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  12. Spectrally-Tunable Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop a SPECTRALLY-TUNABLE INFRARED CAMERA based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. This will build on...

  13. Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells

    Science.gov (United States)

    Karalic, Matija; Mueller, Susanne; Mittag, Christopher; Pakrouski, Kiryl; Wu, QuanSheng; Soluyanov, Alexey A.; Troyer, Matthias; Tschirky, Thomas; Wegscheider, Werner; Ensslin, Klaus; Ihn, Thomas

    2016-12-01

    Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the noninverted semiconducting regime. The activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by a strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

  14. Ultrafast spectral interferometry of resonant secondary emmission from semiconductor quantum wells

    DEFF Research Database (Denmark)

    Birkedal, Dan; Shah, Jagdeep

    1999-01-01

    Recent investigations of secondary emission from quantum well excitons follwing resonant excitation have demonstrated an intricate interplay of coherent Rayleigh scattering and incoherent luminescence. We have very recently demonstrated that it is possible to isolate and time resolve the coherent...

  15. Modelling and characterization of colliding-pulse mode-locked (CPM) quantum well lasers. [MPS1

    DEFF Research Database (Denmark)

    Bischoff, Svend; Brorson, S.D.; Franck, T.;

    1996-01-01

    A theoretical and experimental study of passive colliding pulse mode-locked quantum well lasers is presented. The theoretical model for the gain dynamics is based on semi-classical density matrixequations. The gain dynamics are characterized exp...

  16. Handheld Longwave Infrared Camera Based on Highly-Sensitive Quantum Well Infrared Photodetectors Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to develop a compact handheld longwave infrared camera based on quantum well infrared photodetector (QWIP) focal plane array (FPA) technology. Based on...

  17. International Workshop on "Intersubband Transitions in Quantum Wells : Physics and Applications"

    CERN Document Server

    Su, Yan-Kuin

    1998-01-01

    The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well i...

  18. Calculation of Excitonic Transitions in ZnO/MgZnO Quantum-Well Heterostructures

    Institute of Scientific and Technical Information of China (English)

    徐天宁; 吴惠桢; 邱东江; 陈乃波

    2003-01-01

    We calculate the excitonic transition energies and exciton binding energies in ZnO/MgxZn1-xO quantum-well heterostructures with Mg composition x varied from 0.08 to 0.36. The effect of the exciton-phonon interaction on the exciton binding energies is taken into account in the model. For the ZnO/Mg0.12Zn0.88O quantum-well structure, we compare the calculated result with the available experimental data at 5 K, and a good agreement is achieved. The excitonic transition energies at room temperature in ZnO/MgxZn1-xO quantum-well heterostructures are also calculated. The results show that when the well width exceeds 50 A, the quantum size effect is neglectable and the excitonic transition energies in ZnO/MgxZn1-xO (with x varied from 0.08 to 0.36)quantum-well heterostructures are close to the value of bulk ZnO. The maximum exciton binding energy as large as 121.1 meV is obtained for the well width of 12.5 A in the ZnO/Mg0.36Zn0.64O quantum-well heterostructures.

  19. Spontaneous Coherence Effects in Quantum Dots and Quantum Wells Placed in Microcavities

    Directory of Open Access Journals (Sweden)

    Kaputkina N.E.

    2016-01-01

    Full Text Available The Bose-Einstein condensation temperature Tc for a system of coupled quantum dots in a microcavity was estimated in function of the confining potential steepness, the external magnetic field strength, and the barrier layer width for indirect excitons. The effect of the magnetic field on Tc was found to be nonmonotonic over a certain range of the control parameters. The reason is the presence of two competing mechanisms accompanying the increase of the magnetic field: (a increase of the magnetoexciton effective mass and (b increase of the effective confining potential steepness for quantum dots.

  20. Dielectric coating and surface plasmon enhancement of multi-color quantum-well structures

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Iida, Daisuke; Ou, Yiyu

    We fabricate a multi-colored quantum-well structure as a prototype towards monolithic white light-emitting diodes, and modify the emission intensities of different colors by introducing dielectric and Ag nanoparticle coating.......We fabricate a multi-colored quantum-well structure as a prototype towards monolithic white light-emitting diodes, and modify the emission intensities of different colors by introducing dielectric and Ag nanoparticle coating....

  1. Collective Behavior of a Spin-Aligned Gas of Interwell Excitons in Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Bayer, M.; Hvam, Jørn Märcher;

    2005-01-01

    The kinetics of a spin-aligned gas of interwell excitons in GaAs/AlGaAs double quantum wells (n–i–n heterostructure) is studied. The temperature dependence of the spin relaxation time for excitons, in which a photoexcited electron and hole are spatially separated between two adjacent quantum wells...... is associated with indirect evidence of the coherence of the collective phase of interwell excitons at temperatures below the critical value....

  2. Energy spectrum of an electron confined in the hexagon-shaped quantum well

    Institute of Scientific and Technical Information of China (English)

    Yu.; V.; VOROBIEV; V.; R.; VIEIRA; P.; P.; HORLEY; P.; N.; GORLEY; J.; GONZLEZ-HERNNDEZ

    2009-01-01

    Considering the hexagonal-shaped quantum-scale formations on the surface of thin semiconductor films, a methodology was developed to obtain the analytical solution of the Schrdinger equation when impenetrable walls of a quantum well are treated as mirrors. The results obtained allowed the calculation of the space probability distributions and the energy spectrum of the particle confined in a hex-agonal-shaped well.

  3. Energy spectrum of an electron confined in the hexagon-shaped quantum well

    Institute of Scientific and Technical Information of China (English)

    Yu.V.VOROBIEV; V.R.VlEIRA; P.P.HORLEY; P.N.GORLEY; J.GONZ(A)LEZ-HERN(A)NDEZ

    2009-01-01

    Considering the hexagonal-shaped quantum-scale formations on the surface of thin semiconductor films, a methodology was developed to obtain the analytical solution of the Schr(o)dinger equation when impenetrable walls of a quantum well are treated as mirrors. The results obtained allowed the calcula-tion of the space probability distributions and the energy spectrum of the particle confined in a hex-agonal-shaped well.

  4. Modeling of carrier dynamics in quantum-well electroabsorption modulators

    DEFF Research Database (Denmark)

    Højfeldt, Sune; Mørk, Jesper

    2002-01-01

    We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence that vari......We present a comprehensive drift-diffusion-type electroabsorption modulator (EAM) model. The model allows us to investigate both steady-state properties and to follow the sweep-out of carriers after pulsed optical excitation. Furthermore, it allows for the investigation of the influence...... that various design parameters have on the device properties, in particular how they affect the carrier dynamics and the corresponding field dynamics. A number of different types of results are presented. We calculate absorption spectra and steady-state field screening due to carrier pile-up at the separate......-confinement heterobarriers. We then move on to look at carrier sweep-out upon short-pulse optical excitation. For a structure with one well, we analyze how the well position affects the carrier sweep-out and the absorption recovery. We calculate the field dynamics in a multiquantum-well structure and discuss how the changes...

  5. Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy

    Science.gov (United States)

    González-Fernández, J. V.; Herrera-Jasso, R.; Ulloa-Castillo, N. A.; Ortega-Gallegos, J.; Castro-García, R.; Lastras-Martínez, L. F.; Lastras-Martínez, A.; Balderas-Navarro, R. E.; Mozume, T.; Gozu, S.

    2016-12-01

    We report on photoreflectance anisotropy (PRA) spectroscopy of InGaAs/AlAs/AlAsSb coupled double quantum wells (CDQWs) with extremely thin coupling AlAs barriers grown by molecular beam epitaxy (MBE), with no intentional doping. By probing the in-plane interfacial optical anisotropies (OAs), it is shown that PRA spectroscopy has the ability to detect and distinguish semiconductor layers with quantum dimensions, as the anisotropic photoreflectance (PR) signal stems entirely from buried quantum wells (QWs). In order to account for the experimental PRA spectra, a theoretical model at k = 0, based on a linear electro-optic effect through a piezoelectric shear strain, has been employed to quantify the internal electric fields across the QWs. The dimensionalities of the PR lineshapes were tested by using reciprocal (Fourier) space analysis. Such a complementary test is used in order to correctly employ the PRA model developed here.

  6. Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate

    Directory of Open Access Journals (Sweden)

    Hung-Pin Hsu

    2013-01-01

    Full Text Available We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW structure on Ge-on-Si virtual substrate (VS grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

  7. Transmission line model for strained quantum well lasers including carrier transport and carrier heating effects.

    Science.gov (United States)

    Xia, Mingjun; Ghafouri-Shiraz, H

    2016-03-01

    This paper reports a new model for strained quantum well lasers, which are based on the quantum well transmission line modeling method where effects of both carrier transport and carrier heating have been included. We have applied this new model and studied the effect of carrier transport on the output waveform of a strained quantum well laser both in time and frequency domains. It has been found that the carrier transport increases the turn-on, turn-off delay times and damping of the quantum well laser transient response. Also, analysis in the frequency domain indicates that the carrier transport causes the output spectrum of the quantum well laser in steady state to exhibit a redshift which has a narrower bandwidth and lower magnitude. The simulation results of turning-on transients obtained by the proposed model are compared with those obtained by the rate equation laser model. The new model has also been used to study the effects of pump current spikes on the laser output waveforms properties, and it was found that the presence of current spikes causes (i) wavelength blueshift, (ii) larger bandwidth, and (iii) reduces the magnitude and decreases the side-lobe suppression ratio of the laser output spectrum. Analysis in both frequency and time domains confirms that the new proposed model can accurately predict the temporal and spectral behaviors of strained quantum well lasers.

  8. Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    PEI Xiao-Jiang; GUO Li-Wei; WANG Yang; WANG Xiao-Hui; JIA Hai-Qiang; CHEN Hong; ZHOU Jun-Ming; WANG Li; Tamai N

    2008-01-01

    Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) is observed at temperature higher than about lOOK, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100 K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices.It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling.

  9. Quantum information entropies for a squared tangent potential well

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Shishan [Information and Engineering College, DaLian University, 116622 (China); Sun, Guo-Hua, E-mail: sunghdb@yahoo.com [Centro Universitario Valle de Chalco, Universidad Autónoma del Estado de México, Valle de Chalco Solidaridad, Estado de México, 56615 (Mexico); Dong, Shi-Hai, E-mail: dongsh2@yahoo.com [Departamento de Física, Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Unidad Profesional Adolfo López Mateos, Edificio 9, México D.F. 07738 (Mexico); Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States); Draayer, J.P., E-mail: draayer@sura.org [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001 (United States)

    2014-01-10

    The particle in a symmetrical squared tangent potential well is studied by examining its Shannon information entropy and standard deviations. The position and momentum information entropy densities ρ{sub s}(x), ρ{sub s}(p) and probability densities ρ(x), ρ(p) are illustrated with different potential range L and potential depth U. We present analytical position information entropies S{sub x} for the lowest two states. We observe that the sum of position and momentum entropies S{sub x} and S{sub p} expressed by Bialynicki-Birula–Mycielski (BBM) inequality is satisfied. Some eigenstates exhibit entropy squeezing in the position. The entropy squeezing in position will be compensated by an increase in momentum entropy. We also note that the S{sub x} increases with the potential range L, while decreases with the potential depth U. The variation of S{sub p} is contrary to that of S{sub x}.

  10. Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells

    Science.gov (United States)

    de Aquino, V. M.; Iwamoto, H.; Dias, I. F. L.; Laureto, E.; da Silva, M. A. T.; da Silva, E. C. F.; Quivy, A. A.

    2017-01-01

    In the present paper it is demonstrated that the bound electronic states of multiple quantum wells structures may be calculated very efficiently by expanding their eigenstates in terms of the eigenfunctions of a particle in a box. The bound states of single and multiple symmetric or nonsymmetric wells are calculated within the single-band effective mass approximation. A comparison is then made between the results obtained for simple cases with exact calculations. We also apply our approach to a GaAs/AlGaAs multiple quantum well structure composed of forty periods each one with seven quantum wells. The method may be very useful to design narrow band quantum cascade photodetectors to work without applied bias in a photovoltaic mode. With the presented method the effects of a electric field may also be easily included which is very important if one desires study quantum well structures for application to the development of quantum cascade lasers. The advantages of the method are also presented.

  11. Structural, morphological, and magnetic characterization of In{sub 1-x}Mn{sub x}As quantum dots grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ferri, F. A.; Marega, E. Jr. [Instituto de Fisica de Sao Carlos, Universidade de Sao Paulo, Sao Carlos 13560-970, SP (Brazil); Coelho, L. N. [Instituto de Fisica, Universidade de Brasilia, Brasilia 70919-970, DF (Brazil); Kunets, V. P.; Salamo, G. J. [Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

    2012-08-01

    In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In{sub 1-x}Mn{sub x}As quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In{sub 1-x}Mn{sub x}As QDs were grown on top of a non-magnetic In{sub 0.4}Ga{sub 0.6}As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In{sub 1-x}Mn{sub x}As QDs. For particular conditions, such as surface morphology and growth conditions, the In{sub 1-x}Mn{sub x}As QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2 K. We found that the magnetic moment axis changes from [110] in In{sub 1-x}Mn{sub x}As over GaAs to [1-10] for the ordered In{sub 1-x}Mn{sub x}As grown over GaAs template.

  12. Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

    Science.gov (United States)

    Monavarian, Morteza; Rosales, Daniel; Gil, Bernard; Izyumskaya, Natalia; Das, Saikat; Özgür, Ümit; Morkoç, Hadis; Avrutin, Vitaliy

    2016-02-01

    Excitonic recombination dynamics in (11-22) -oriented semipolar In0.2Ga0.8N/In0.06Ga0.94N multiquantum wells (MQWs) grown on GaN/m-sapphire templates have been investigated by temperature-dependent time-resolved photoluminescence (TRPL). The radiative and nonradiative recombination contributions to the PL intensity at different temperatures were evaluated by analysing temperature dependences of PL peak intensity and decay times. The obtained data indicate the existence of exciton localization with a localization energy of Eloc(15K) =7meV and delocalization temperature of Tdeloc = 200K in the semipolar InGaN MQWs. Presence of such exciton localization in semipolar (11-22) -oriented structures could lead to improvement of excitonic emission and internal quantum efficiency.

  13. Degenerate four-wave mixing in room-temperature GaAs/GaAlAs multiple quantum well structures

    Science.gov (United States)

    Miller, D. A. B.; Chemla, D. S.; Eilenberger, D. J.; Smith, P. W.; Gossard, A. C.; Wiegman, W.

    1983-06-01

    Degenerate four-wave mixing (DFWM) is of current interest both for practical applications (e.g., phase conjugation) and as a physical probe. DFWM makes it possible to detect very small nonlinear changes in refraction. In connection with the present investigation, the first observations of DFWM in GaAs/GaAlAs multiple quantum well structures (MQW's) at room temperature are reported. By combining DFWM and nonlinear absorption results, a direct measurement of the nonlinear refraction near the band gap of the MQW is conducted. The obtained value is compared with previous estimates. The measurements are of practical importance for possible low-power optical devices compatible with laser diodes based either on DFWM, nonlinear refraction (such as optical bistability) of nonlinear absorption. The MQW samples were grown by molecular beam epitaxy (MBE) on GaAs substrates, with the MQW layers sandwiched between GaAlAs cap layers which are transparent at the considered wavelengths.

  14. Reconstruction of original indium distribution in InGaAs quantum wells from experimental SIMS depth profiles

    Energy Technology Data Exchange (ETDEWEB)

    Kudriavtsev, Yu., E-mail: yuriyk@cinvestav.mx [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Asomoza, R. [Departamento Ingeniería Eléctrica – SEES, CINVESTAV-IPN, Av. IPN #2508, D.F., México (Mexico); Gallardo-Hernandez, S.; Ramirez-Lopez, M.; Lopez-Lopez, M. [Departamento de Física, CINVESTAV-IPN, México (Mexico); Nevedomsky, V.; Moiseev, K. [Ioffe Physical Technical Institute, S-Petersburg (Russian Federation)

    2014-11-15

    Depth profiling analysis of InGaAs/GaAs hetero-structures grown by MBE on GaAs (0 0 1) substrates is reported. A novel two-step procedure for de-convolving experimental SIMS depth distribution is employed and the original In distribution in InGaAs quantum wells (QW) is estimated. The QW thickness calculated from the de-convolved profiles is shown to be in good agreement with the cross-sectional TEM images. The experimental In depth profile is shifted from the original In distribution due to the ion mixing process during depth profiling analysis. It is shown that the de-convolution procedure is suitable for reconstruction of the original QW width and depth by SIMS even for relatively high primary ion energies.

  15. Monolithic semiconductor saturable absorber mirror with strain-compensated GaInAs/GaAsP quantum wells

    Science.gov (United States)

    Xiang, N.; Liu, H. F.; Kong, J.; Tang, D. Y.; Pessa, M.

    2007-04-01

    We report a monolithic broadband semiconductor saturable absorber mirror (SESAM) operating for 1025-1100 nm wavelength range with strain-compensated GaInAs/GaAsP quantum wells (QWs). By introducing tensile-strained GaAsP barriers, the compressive strain caused by the GaInAs QWs can be compensated and good quality QWs are obtained. Strain-compensated GaInAs/GaAsP QWs are grown on top of a GaAs/AlAs distributed Bragg reflector (DBR) to form the SESAM structure. The SESAM has a broad high-reflective stopband of about 120 nm and has been successfully used in passively modelocking a Nd:Gd 0.64Y 0.36VO 4 solid-state laser operating at 1064 nm wavelength. Optical pulses as short as 4.5 ps are generated with a peak power of 3.7 kW.

  16. Room temperature continuous wave InGaAsN quantum well vertical cavity lasers emitting at 1.3 um

    Energy Technology Data Exchange (ETDEWEB)

    CHOQUETTE,KENT D.; KLEM,JOHN F.; FISCHER,ARTHUR J.; SPAHN,OLGA B.; ALLERMAN,ANDREW A.; FRITZ,IAN J.; KURTZ,STEVEN R.; BREILAND,WILLIAM G.; SIEG,ROBERT M.; GEIB,KENT M.; SCOTT,J.W.; NAONE,R.L.

    2000-06-05

    Selectively oxidized vertical cavity lasers emitting at 1294 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave at and above room temperature. The lasers employ two n-type Al{sub 0.94}Ga{sub 0.06}As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the optical cavity, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55 C. These lasers exhibit the longest wavelength reported to date for vertical cavity surface emitting lasers grown on GaAs substrates.

  17. Spin injection from epitaxial Heusler alloy thin films into InGaAs/GaAs quantum wells

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad

    2006-01-01

    to typically 0.02-0.1 Ωmm2 for Fe and Co contacts but two orders of magnitude higher for the Co2MnGa contacts. Point contact Andreev reflection measurements on an off-stoichiometric thin film (Co2.4Mn1.6Ga) show a spin polarization of P ≈ 50 %. Furthermore spin injection into a InGaAs/GaAs quantum well have...... no anisotropy is seen for near stoichiometry thin films on an ordinary GaAs surface. Typically thin films grown on GaAs show lower saturation magnetization than expected from bulk properties. The electrical characterizations have revealed resistivities around ρ = 350μΩcm at 300 K. Generally, the near...

  18. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Langbein, Wolfgang Werner

    2000-01-01

    We have used photoluminescence spectroscopy to investigate the influence of interface roughness in GaAs/ AlAs quantum wells on their optical properties over a wide continuous range of well thicknesses. In order to compare different correlation lengths of the in-plane disorder potential, the wells...

  19. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, F. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Fischer, I. A.; Schulze, J. [Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany); Benedetti, A. [CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain); Zaumseil, P. [IHP GmbH, Innovations for High Performance Microelectronics, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Cerqueira, M. F.; Vasilevskiy, M. I. [Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal); Stefanov, S.; Chiussi, S. [Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

    2015-12-28

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  20. Fabrication of GeSn-multiple quantum wells by overgrowth of Sn on Ge by using molecular beam epitaxy

    Science.gov (United States)

    Oliveira, F.; Fischer, I. A.; Benedetti, A.; Zaumseil, P.; Cerqueira, M. F.; Vasilevskiy, M. I.; Stefanov, S.; Chiussi, S.; Schulze, J.

    2015-12-01

    We report on the fabrication and structural characterization of epitaxially grown ultra-thin layers of Sn on Ge virtual substrates (Si buffer layer overgrown by a 50 nm thick Ge epilayer followed by an annealing step). Samples with 1 to 5 monolayers of Sn on Ge virtual substrates were grown using solid source molecular beam epitaxy and characterized by atomic force microscopy. We determined the critical thickness at which the transition from two-dimensional to three-dimensional growth occurs. This transition is due to the large lattice mismatch between Ge and Sn (≈14.7%). By depositing Ge on top of Sn layers, which have thicknesses at or just below the critical thickness, we were able to fabricate ultra-narrow GeSn multi-quantum-well structures that are fully embedded in Ge. We report results on samples with one and ten GeSn wells separated by 5 and 10 nm thick Ge spacer layers that were characterized by high resolution transmission electron microscopy and X-ray diffraction. We discuss the structure and material intermixing observed in the samples.

  1. Breakdown of the quantum Hall effect in InAs/AlSb quantum wells due to counterflowing edge channels

    NARCIS (Netherlands)

    Wees, B.J. van; Meijer, G.I.; Kuipers, J.J.; Klapwijk, T.M.; Graaf, W. van de; Borghs, G.

    1995-01-01

    We investigated magnetotransport in the two-dimensional electron gas (2DEG) present in InAs/AlSb quantum wells. The filling factor Ng underneath a gate electrode was reduced relative to the bulk filling factor Nb. For Ng

  2. Wavelength sensitive detector based on ICD in two coupled quantum wells

    Science.gov (United States)

    Goldzak, Tamar; Gilary, Ido; Moiseyev, Nimrod

    2014-05-01

    We design a wavelength sensitive detector based on inter coulombic decay (ICD) mechanism in a two-quantum well nano-structure. The two coupled quantum wells are designed to satisfy the specific conditions which allow the ICD to occur. In this setup, by absorbing light an electron in one well is excited. Its relaxation back to the ground state is a non-radiative process which transfers the excess energy to the ionization of the electron in the neighboring well into the continuum. Only radiation with a specific wavelength will be absorbed, when the wavelength matches the excitation energy in the quantum well. By applying a weak bias a current is obtained even when light with a very low intensity is absorbed. For the ICD to be dominant decay mechanism it must prevail over all other possible competitive decay processes. We have found that the lifetime of the ICD is on the timescale of picoseconds. Control over the ICD lifetime can be achieved by variation of different parameters in the two quantum well nano-structure. The most useful parameter is the distance between the two quantum wells. We show that as the distance decreases the decay rate of the ICD increases. Furthermore the distance can be tuned such that the emitted electron would be in a metastable state in the continuum (a resonance state); this causes the life time of the ICD to be an order of magnitude smaller, and improves the efficiency of the ICD.

  3. Magneto-Gyrotropic Photogalvanic Effects in Semiconductor Quantum Wells

    Science.gov (United States)

    Ganichev, S. D.

    gas a charge current, the anomalous Hall effect, can be observed. As both magnetic fields and gyrotropic mechanisms were used authors introduced the notation "magneto-gyrotropic photogalvanic effects" for this class of phenomena. The effect is observed in GaAs and InAs low dimensional structures at free-carrier absorption of terahertz radiation in a wide range of temperatures from liquid helium temperature up to room temperature. The results are well described by the phenomenological description based on the symmetry. Experimental and theoretical analysis evidences unumbiguously that the observed photocurrents are spin-dependent. Microscopic theory of this effect based on asymmetry of photoexcitation and relaxation processes are developed being in a good agreement with experimental data. Note from Publisher: This article contains the abstract only.

  4. Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

    Institute of Scientific and Technical Information of China (English)

    I.; V.; ANTONOVA; M.; S.; KAGAN; E.; P.; NEUSTROEV; S.; A.; SMAGULOVA

    2009-01-01

    Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture intervals was observed in Q-DLTS spectra. Activation energies extracted from Q-DLTS measure-mens are in good agreement with energies of quantum confinement levels in the QW.

  5. Efficiency dip observed with InGaN-based multiple quantum well solar cells

    KAUST Repository

    Lai, Kunyu

    2014-01-01

    The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

  6. Spinor-electron wave guided modes in coupled quantum wells structures by solving the Dirac equation

    Energy Technology Data Exchange (ETDEWEB)

    Linares, Jesus [Area de Optica, Departamento de Fisica Aplicada, Facultade de Fisica, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Galicia (Spain)], E-mail: suso.linares.beiras@usc.es; Nistal, Maria C. [Area de Optica, Departamento de Fisica Aplicada, Facultade de Fisica, Escola Universitaria de Optica e Optometria, Universidade de Santiago de Compostela, E-15782 Santiago de Compostela, Galicia (Spain)

    2009-05-04

    A quantum analysis based on the Dirac equation of the propagation of spinor-electron waves in coupled quantum wells, or equivalently coupled electron waveguides, is presented. The complete optical wave equations for Spin-Up (SU) and Spin-Down (SD) spinor-electron waves in these electron guides couplers are derived from the Dirac equation. The relativistic amplitudes and dispersion equations of the spinor-electron wave-guided modes in a planar quantum coupler formed by two coupled quantum wells, or equivalently by two coupled slab electron waveguides, are exactly derived. The main outcomes related to the spinor modal structure, such as the breaking of the non-relativistic degenerate spin states, the appearance of phase shifts associated with the spin polarization and so on, are shown.

  7. Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

    Science.gov (United States)

    Cong, G. W.; Akimoto, R.; Gozu, S.; Mozume, T.; Hasama, T.; Ishikawa, H.

    2010-03-01

    We demonstrated the intersubband absorption in undoped InGaAs/AlAsSb coupled double quantum wells through silicon ion implantation and rapid thermal annealing. For an implantation dose of 1×1014 cm-2, the actual carrier density of a sample annealed at 600 °C for 1 min was ˜7.5×1013 cm-2 (˜75% activation efficiency); the activation energy was ˜1.41 eV. The simultaneously generated quantum well intermixing (QWI) was nonuniform due to the silicon ion distribution. The effects of QWI nonuniformity on both intersubband and interband transitions were explained by eight-band k ṡp calculation. This study will open a route for monolithic integration of intersubband-transition-based high-speed all-optical switches.

  8. Photon-Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot-Quantum Well Hybrid Structure

    Institute of Scientific and Technical Information of China (English)

    卞松保; 唐艳; 李桂荣; 李月霞; 杨富华; 郑厚植; 曾一平

    2003-01-01

    We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW)hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100ms has been obtained at a temperature of 10K while the switching speed reaches the order of ten megahertz.

  9. QUANTUM MECHANICAL MODEL AND SIMULATION OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR-Ⅱ ELECTRICAL ASPECTS

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter-diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift-diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.

  10. Field-effect transistor self-electrooptic effect device integrated photodiode, quantum well modulator and transistor

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D.A.B.; Feuer, M.D.; Chang, T.Y.; Shunk, S.C.; Henry, J.E.; Burrows, D.J.; Chemla, D.S.

    1989-03-01

    The authors propose and demonstrate the integration of a photodiode, a quantum-confined Stark effect quantum well optical modulator and a metal-semiconductor field-effect transistor (MESFET), to make a field-effect transistor self-electrooptic effect device. This integration allows optical inputs and outputs on the surface of a GaAs-integrated circuit chip, compatible with standard MESFET processing. As an illustration of feasibility, the authors demonstrate optical signal amplification with a single MESFET.

  11. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Pizzi, Giovanni [NEST-CNR-INFM and Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56127 Pisa (Italy); Virgilio, Michele; Grosso, Giuseppe, E-mail: g.pizzi@sns.it [NEST-CNR-INFM and Dipartimento di Fisica ' E. Fermi' , Universita di Pisa, Largo Pontecorvo 3, I-56127 Pisa (Italy)

    2010-02-05

    It is known that under a tensile strain of about 2% of the lattice constant, the energy of the bottom conduction state of bulk Ge at the {Gamma} point falls below the minimum at the L point, leading to a direct gap material. In this paper we investigate how the same condition is realized in tensile strained Ge quantum wells. By means of a tight-binding sp{sup 3}d{sup 5}s* model, we study tensile strained Ge/Si{sub 0.2}Ge{sub 0.8} multiple quantum well (MQW) heterostructures grown on a relaxed SiGeSn alloy buffer along the [001] direction. We focus on values of the strain fields at the crossover between the indirect and direct gap regime of the MQWs, and calculate band edge alignments, electronic band structures, and density of states. We also provide a numerical evaluation of the MQW material gain spectra for TE and TM polarization under realistic carrier injection levels, taking into account the leakages related to the occupation of the electronic states at the L point. The analysis of the different orbital contributions to the near-gap states of the complete structure allows us to give a clear interpretation of the numerical results for the strain-dependent TM/TE gain ratio. Our calculations demonstrate the effectiveness of the structures under consideration for light amplification.

  12. The Over-Barrier Resonant States and Multi-Channel Scattering in Multiple Quantum Wells

    Directory of Open Access Journals (Sweden)

    A Polupanov

    2016-09-01

    Full Text Available We demonstrate an explicit numerical method for accurate calculation of the scattering matrix and its poles, and apply this method to describe the multi-channel scattering in the multiple quantum-wells structures. The S-matrix is continued analytically to the unphysical region of complex energy values. Results of calculations show that there exist one or more S-matrix poles, corresponding to the over-barrier resonant states critical for the effect of the absolute reflection of holes in the energy range where only the heavy ones may propagate over barriers in a structure. Light- and heavy-hole states are described by the Luttinger Hamiltonian matrix. In contrast to the single quantum-well case, at some parameters of a multiple quantum-wells structure the number of S-matrix poles may exceed that of the absolute reflection peaks, and at different values of parameters the absolute reflection peak corresponds to different resonant states. The imaginary parts of the S-matrix poles and hence the lifetimes of resonant states as well as the widths of resonant peaks of absolute reflection depend drastically on the quantum-well potential depth. In the case of shallow quantum wells there is in fact a long-living over-barrier resonant hole state.

  13. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

    Science.gov (United States)

    Qian, Fang; Li, Yat; Gradečak, Silvija; Park, Hong-Gyu; Dong, Yajie; Ding, Yong; Wang, Zhong Lin; Lieber, Charles M.

    2008-09-01

    Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have an unusually high thermoelectric figure of merit. Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature. Transmission electron microscopy studies show that the triangular GaN nanowire cores enable epitaxial and dislocation-free growth of highly uniform (InGaN/GaN)n quantum wells with n=3, 13 and 26 and InGaN well thicknesses of 1-3nm. Optical excitation of individual MQW nanowire structures yielded lasing with InGaN quantum-well composition-dependent emission from 365 to 494nm, and threshold dependent on quantum well number, n. Our work demonstrates a new level of complexity in nanowire structures, which potentially can yield free-standing injection nanolasers.

  14. Modeling of dilute nitride cascaded quantum well solar cells for high efficiency photovoltaics

    Science.gov (United States)

    Vijaya, G.; Alemu, A.; Freundlich, A.

    2013-03-01

    III-V Dilute Nitride multi-quantum well structures are currently promising candidates to achieve 1 sun efficiencies of cell in a 4 junction configuration could yield 1 sun efficiencies greater than 40%. However for a conventional deep well design the characteristic carrier escape times could exceed that of radiative recombination hence limiting the current output of the cell, as has been indicated by prior experiments. In order to increase the current extraction here we evaluate the performance of a cascaded quantum well design whereby a thermally assisted resonant tunneling process is used to accelerate the carrier escape process (efficiency. The quantum efficiency of a p-i-n subcell where a periodic sequence of quantum wells with well and barrier thicknesses adjusted for the sequential extraction operation is calculated using a 2D drift diffusion model and taking into account absorption properties of resulting MQWs. The calculation also accounts for the E-field induced modifications of absorption properties and quantization in quantum wells. The results are then accounted for to calculate efficiencies for the proposed 4 junction design, and indicate potential for reaching efficiencies in excess of this structure is above 42% (1 sun) and above 50% (500 sun) AM1.5.

  15. Correlation between the structural and cathodoluminescence properties in InGaN/GaN multiple quantum wells with large number of quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jing; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Jiang, Desheng; Chen, Ping; Zhu, Jianjun; Liu, Zongshun; Le, Lingcong; He, Xiaoguang; Li, Xiaojing [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO BOX 912, Beijing 100083 (China); Wang, Hui; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Jahn, Uwe [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)

    2014-09-01

    Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar cell structures are investigated, revealing the relationship between optical and structural properties of the MQW structures with a large number of quantum wells. In the bottom MQW layers, a blueshift of CL peak along the growth direction is found and attributed to the decrease of indium content due to the compositional pulling effect. An obvious split of emission peak and a redshift of the main emission energy are found in the top MQW layers when the MQW grows above the critical layer thickness. They are attributed to the segregation of In-rich InGaN clusters rather than the increase of indium content in quantum well layer. The MQW structure is identified to consist of two regions: a strained one in the bottom, where the indium content is gradually decreased, and a partly relaxed one in the top with segregated In-rich InGaN clusters.

  16. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  17. Uncooled SWIR InGaAs/GaAsSb type-II quantum well focal plane array

    Science.gov (United States)

    Inada, H.; Miura, K.; Mori, H.; Nagai, Y.; Iguchi, Y.; Kawamura, Y.

    2010-04-01

    Low dark current photodiodes (PDs) in the short wavelength infrared (SWIR) upto 2.5μm region, are expected for many applications. HgCdTe (MCT) is predominantly used for infrared imaging applications. However, because of high dark current, MCT device requires a refrigerator such as stirling cooler, which increases power consumption, size and cost of the sensing system. Recently, InGaAs/GaAsSb type II quantum well structures were considered as attractive material system for realizing low dark current PDs owing to lattice-matching to InP substrate. Planar type PIN-PDs were successfully fabricated. The absorption layer with 250 pair-InGaAs(5nm)/GaAsSb(5nm) quantum well structures was grown on S-doped (100) InP substrates by solid source molecular beam epitaxy method. InP and InGaAs were used for cap layer and buffer layer, respectively. The p-n junctions were formed in the absorption layer by the selective diffusion of zinc. Diameter of light-receiving region was 140μm. Low dark current was obtained by improving GaAsSb crystalline quality. Dark current density was 0.92mA/cm2 which was smaller than that of a conventional MCT. Based on the same process as the discrete device, a 320x256 planar type focal plane array was also fabricated. Each PD has 15μm diameter and 30μm pitch and it was bonded to read-out IC by using indium bump flip chip process. Finally, we have successfully demonstrated the 320 x256 SWIR image at room temperature. This result means that planer type PD array with the type II InGaAs/GaAsSb quantum well structure is a promising candidate for uncooled applications.

  18. GaIn As Quantum Dots (QD) grown by Liquid Phase Epitaxy (LPE)

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz Vazquez, F E; Mishurnyi, V A; Gorbatchev, A Yu; De Anda, F [Universidad Autonoma de San Luis Potosi, Instituto de Investigation en Comunicacion Optica, Av. Karakorum 1470, Col. Lomas 4a Sec., San Luis Potosi, SLP, CP 78210 (Mexico); Elyukhin, V A, E-mail: fcoe_ov@prodigy.net.m, E-mail: andre@cactus.iico.uaslp.m [CINVESTAV-IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico D.F., CP 07360 (Mexico)

    2009-05-01

    The majority of the semiconductor structures with QD today are grown by MBE and MOCVD. It is known that the best material quality can be achieved by LPE because, in contrast to MBE and MOCVD, this method is realized at near-equilibrium conditions. To develop QD LPE technology first of all it is necessary to find out a growth technique allowing the crystallization of epitaxial materials with very small volume. This can be done by means of different techniques. In this work we apply a low temperature short-time growth method, which allows the production not only of single, but also of multilayer heterostructures. We have grown Ga{sub x}In{sub 1-z}As QD on GaAs (100) substrates at 450 C. The details of the QD formation, depending on composition of the Ga{sub x}In{sub -x} As solid solutions, have been studied by atom-force microscopy. The photoluminescence spectra of investigated samples show, in addition to a short-wave GaAs related peak, a longer wavelength line, which disappears after removal of the grown GaInAs material using an etching solution. This fact, together with atom-force microscopy results can be interpreted as a proof that QD heterostructures were grown successfully by LPE.

  19. Effect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si

    Science.gov (United States)

    Halder, Nripendra N.; Biswas, Pranab; Dhabal Das, Tushar; Das, Sanat Kr.; Chattopadhyay, S.; Biswas, D.; Banerji, P.

    2014-01-01

    A detailed analysis of photoluminescence (PL) from InP quantum dots (QDs) grown on Si has been carried out to understand the effect of substrate/host material in the luminescence and carrier escape process from the surface quantum dots. Such studies are required for the development of monolithically integrated next generation III-V QD based optoelectronics with fully developed Si microelectronics. The samples were grown by atmospheric pressure metalorganic chemical vapor deposition technique, and the PL measurements were made in the temperature range 10-80 K. The distribution of the dot diameter as well as the dot height has been investigated from atomic force microscopy. The origin of the photoluminescence has been explained theoretically. The band alignment of InP/Si heterostructure has been determined, and it is found be type II in nature. The positions of the conduction band minimum of Si and the 1st excited state in the conduction band of InP QDs have been estimated to understand the carrier escape phenomenon. A blue shift with a temperature co-efficient of 0.19 meV/K of the PL emission peak has been found as a result of competitive effect of different physical processes like quantum confinement, strain, and surface states. The corresponding effect of blue shift by quantum confinement and strain as well as the red shift by the surface states in the PL peaks has been studied. The origin of the luminescence in this heterojunction is found to be due to the recombination of free excitons, bound excitons, and a transition from the 1st electron excited state in the conduction band (e1) to the heavy hole band (hh1). Monotonic decrease in the PL intensity due to increase of thermally escaped carriers with temperature has been observed. The change in barrier height by the photogenerated electric-field enhanced the capture of the carriers by the surface states rather than their accumulation in the QD excited state. From an analysis of the dependence of the PL intensity

  20. Optical Conductivity of Impurity-Doped Parabolic Quantum Wells in an Applied Electric Field

    Institute of Scientific and Technical Information of China (English)

    GUO Kang-Xian; CHEN Chuan-Yu

    2005-01-01

    The optical conductivity of impurity-doped parabolic quantum wells in an applied electric field is investigated with the memory-function approach, and the analytic expression for the optical conductivity is derived. With characteristic parameters pertaining to GaAs/Ga1-xAlxAs parabolic quantum wells, the numerical results are presented.It is shown that, the smaller the well width, the larger the peak intensity of the optical conductivity, and the more asymmetric the shape of the optical conductivity; the optical conductivity is more sensitive to the electric field, the electric field enhances the optical conductivity; when the dimension of the quantum well increases, the optical conductivity increases until it reaches a maximum value, and then decreases.

  1. A gold hybrid structure as optical coupler for quantum well infrared photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Jiayi; Li, Qian; Jing, Youliang [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Li, Zhifeng; Li, Ning; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083 (China); Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2014-08-28

    A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light. The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.

  2. Temperature-driven single-valley Dirac fermions in HgTe quantum wells

    Science.gov (United States)

    Marcinkiewicz, M.; Ruffenach, S.; Krishtopenko, S. S.; Kadykov, A. M.; Consejo, C.; But, D. B.; Desrat, W.; Knap, W.; Torres, J.; Ikonnikov, A. V.; Spirin, K. E.; Morozov, S. V.; Gavrilenko, V. I.; Mikhailov, N. N.; Dvoretskii, S. A.; Teppe, F.

    2017-07-01

    We report on the temperature-dependent magnetospectroscopy of two HgTe/CdHgTe quantum wells below and above the critical well thickness dc. Our results, obtained in magnetic fields up to 16 T and s temperature range from 2 to 150 K, clearly indicate a change in the band-gap energy with temperature. A quantum well wider than dc evidences a temperature-driven transition from topological insulator to semiconductor phases. At a critical temperature of 90 K, the merging of inter- and intraband transitions in weak magnetic fields clearly specifies the formation of a gapless state, revealing the appearance of single-valley massless Dirac fermions with a velocity of 5.6 ×105m s-1 . For both quantum wells, the energies extracted from the experimental data are in good agreement with calculations on the basis of the eight-band Kane Hamiltonian with temperature-dependent parameters.

  3. Asymmetric double quantum well structure as a tunable detector in the far-infrared range

    CERN Document Server

    Shin, U; Park, M J; Lee, S J

    1999-01-01

    The eigenvalues and the wave functions of GaAs/Al sub x Ga sub 1 sub - sub x As asymmetric double quantum well structure have been calculated by using of complex energy method. Based on theoretical calculations, tuning ranges from 9 to 14 mu m are predicted for the proposed asymmetric coupled-quantum-well structure. In addition we calculated the energy eigenvalues and the wave functions of an electron in GaAs/Al sub x Ga sub 1 sub - sub x As single quantum well structure (including delta-perturbation). the variation in E sub 1 , the ground state energy eigenvalue of the electron, depends on the strength and position of the perturbation within the well.

  4. Binding Energy of Biexcitons in GaAs Quantum-Well Wires

    Institute of Scientific and Technical Information of China (English)

    LIU Jian-Jun; CHEN Xiao-Fang; LI Shu-Shen

    2004-01-01

    @@ The binding energy of a biexciton in GaAs quantum-well wires is calculated variationally by use ofa two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is no artificial parameter added in our calculation. Our results agree fairly well with the previous results. It is found that the binding energies are closely correlative to the size of wire. The binding energy of biexcitons is smaller than that of neutral bound excitons in GaAs quantum-well wires when the dopant is located at the centre of the wires.

  5. THE QUANTUM-WELL STRUCTURES OF SELF ELECTROOPTIC-EFFECT DEVICES AND GALLIUM-ARSENIDE

    Directory of Open Access Journals (Sweden)

    Mustafa TEMİZ

    1996-02-01

    Full Text Available Multiple quantum-well (MQW electroabsorptive self electro optic-effect devices (SEEDs are being extensively studied for use in optical switching and computing. The self electro-optic-effect devices which has quantum-well structures is a new optoelectronic technology with capability to obtain both optical inputs and outputs for Gallium-Arsenide/Aluminum Gallium-Arsenide (GaAs/AlGaAs electronic circuits. The optical inputs and outputs are based on quantum-well absorptive properties. These quantum-well structures consist of many thin layers of semiconductors materials of GaAs/AlGaAs which have emerged some important directions recently. The most important advance in the physics of these materials since the early days has been invention of the heterojunction structures which is based at present on GaAs technology. GaAs/AlGaAs structures present some important advantages to relevant band gap and index of refraction which allow to form the quantum-well structures and also to make semiconductor lasers, dedectors and waveguide optical switches.

  6. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Henini M

    2006-01-01

    Full Text Available AbstractOne of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

  7. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  8. Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

    Science.gov (United States)

    Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

    2012-01-01

    In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

  9. Molecular states in double quantum wells: nanochemistry for metatmaterials with new optical properties

    Science.gov (United States)

    Gutierrez, Rafael M.; Castañeda, Arcesio

    2009-08-01

    Quantum mechanics explains the existence and properties of the chemical bond responsible for the formation of molecules from isolated atoms. In this work we study quantum states of Double Quantum Wells, DQW, formed from isolated Single Quantum Wells, SQWs, that can be considered metamaterials. Using the quantum chemistry definition of the covalent bond, we discuss molecular states in DQW as a kind of nanochemistry of metamaterials with new properties, in particular new optical properties. An important particularity of such nanochemistry, is the possible experimental control of the geometrical parameters and effective masses characterizing the semiconductor heterostructures represented by the corresponding DQW. This implies a great potential for new applications of the controlled optical properties of the metamaterials. The use of ab initio methods of intensive numerical calculations permits to obtain macroscopic optical properties of the metamaterials from the fundamental components: the spatial distribution of the atoms and molecules constituting the semiconductor layers. The metamaterial new optical properties emerge from the coexistence of many body processes at atomic and molecular level and complex quantum phenomena such as covalent-like bonds at nanometric dimensions.

  10. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100).

    Science.gov (United States)

    Hakkarainen, T V; Polojärvi, V; Schramm, A; Tommila, J; Guina, M

    2012-03-23

    We report on the effect of post-growth thermal annealing of [011]- ,[011(-)]-, and [010]-oriented quantum dot chains grown by molecular beam epitaxy on GaAs(100) substrates patterned by UV-nanoimprint lithography. We show that the quantum dot chains experience a blueshift of the photoluminescence energy, spectral narrowing, and a reduction of the intersubband energy separation during annealing. The photoluminescence blueshift is more rapid for the quantum dot chains than for self-assembled quantum dots that were used as a reference. Furthermore, we studied polarization resolved photoluminescence and observed that annealing reduces the intrinsic optical anisotropy of the quantum dot chains and the self-assembled quantum dots.

  11. Silanization of plasma-grown silicon quantum dots for production of a tunable, stable, colloidal solution

    Science.gov (United States)

    Anderson, Ingrid E.; Shircliff, Rebecca A.; Lee, Benjamin G.; Simonds, Brian; Agarwal, Sumit; Stradins, Paul; Collins, Reuben T.

    2011-09-01

    Nanomaterials have the potential to revolutionize photovoltaics with the promise of new physics, novel architectures and low cost synthesis. Silicon quantum dots, relative to their II-VI counterparts, are understudied due to the difficulty of solution synthesis and chemical passivation. However, silicon is still an attractive solar cell material, providing an optimal band gap, low toxicity, and a very solid body of physical understanding of bulk silicon to draw from. We have synthesized silicon quantum dots with plasma enhanced chemical vapor deposition, and have developed a method for chemical passivation of these silicon quantum dots that can be used on particles created in a variety of ways. This versatile method utilizes oxidation via wet chemical etch and subsequent siloxane bond formation. The attachment of a silane to the SiOx shell leads to stability of the silicon core for over a month in air, and individual particles can be seen with TEM; thus a stable, colloidal suspension is formed. The future for this technique, including increasing quantum yield of the particles by changing the nature of the oxide, will be discussed.

  12. Controlling the Spontaneous Emission Rate of Quantum Wells in Rolled-Up Hyperbolic Metamaterials.

    Science.gov (United States)

    Schulz, K Marvin; Vu, Hoan; Schwaiger, Stephan; Rottler, Andreas; Korn, Tobias; Sonnenberg, David; Kipp, Tobias; Mendach, Stefan

    2016-08-19

    We experimentally demonstrate the enhancement of the spontaneous emission rate of GaAs quantum wells embedded in rolled-up metamaterials. We fabricate microtubes whose walls consist of alternating Ag and (In)(Al)GaAs layers with incorporated active GaAs quantum-well structures. By variation of the layer thickness ratio of the Ag and (In)(Al)GaAs layers we control the effective permittivity tensor of the metamaterial according to an effective medium approach. Thereby, we can design samples with elliptic or hyperbolic dispersion. Time-resolved low temperature photoluminescence spectroscopy supported by finite-difference time-domain simulations reveal a decrease of the quantum well's spontaneous emission lifetime in our metamaterials as a signature of the crossover from elliptic to hyperbolic dispersion.

  13. The effects of strain on indirect absorption in Ge/SiGe quantum wells

    Science.gov (United States)

    Lever, L.; Ikonić, Z.; Kelsall, R. W.

    2012-06-01

    We calculate the conduction band electron scattering rates from the Γ-valley into the indirect valleys in germanium, and use this to determine the strength of the indirect absorption in Ge/SiGe quantum well heterostructures. This is done as a function of the in-plane compressive strain in the Ge quantum wells, which results from pseudomorphic growth on a SiGe virtual substrate. This compressive strain results in the Δ valleys becoming available as destination states for scattering, which leads to a reduction in the Γ-valley lifetime. We calculate the indirect absorption and lifetime broadening of excitonic peaks, and show that indirect absorption decreases as the Ge fraction in the virtual substrate increases. We conclude that the Ge fraction of the SiGe virtual substrate should be approximately 95% or larger for optimum electroabsorption performance of Ge/SiGe quantum wells.

  14. Controlling the Spontaneous Emission Rate of Quantum Wells in Rolled-Up Hyperbolic Metamaterials

    Science.gov (United States)

    Schulz, K. Marvin; Vu, Hoan; Schwaiger, Stephan; Rottler, Andreas; Korn, Tobias; Sonnenberg, David; Kipp, Tobias; Mendach, Stefan

    2016-08-01

    We experimentally demonstrate the enhancement of the spontaneous emission rate of GaAs quantum wells embedded in rolled-up metamaterials. We fabricate microtubes whose walls consist of alternating Ag and (In)(Al)GaAs layers with incorporated active GaAs quantum-well structures. By variation of the layer thickness ratio of the Ag and (In)(Al)GaAs layers we control the effective permittivity tensor of the metamaterial according to an effective medium approach. Thereby, we can design samples with elliptic or hyperbolic dispersion. Time-resolved low temperature photoluminescence spectroscopy supported by finite-difference time-domain simulations reveal a decrease of the quantum well's spontaneous emission lifetime in our metamaterials as a signature of the crossover from elliptic to hyperbolic dispersion.

  15. Confined optical-phonon-assisted cyclotron resonance in quantum wells via two-photon absorption process

    Science.gov (United States)

    Phuc, Huynh Vinh; Hien, Nguyen Dinh; Dinh, Le; Phong, Tran Cong

    2016-06-01

    The effect of confined phonons on the phonon-assisted cyclotron resonance (PACR) via both one and two photon absorption processes in a quantum well is theoretically studied. We consider cases when electrons are scattered by confined optical phonons described by the Fuchs-Kliewer slab, Ridley's guided, and Huang-Zhu models. The analytical expression of the magneto-optical absorption coefficient (MOAC) is obtained by relating it to the transition probability for the absorption of photons. It predicts resonant peaks caused by transitions between Landau levels and electric subband accompanied by confined phonons emission in the absorption spectrum. The MOAC and the full-width at half-maximum (FWHM) for the intra- and inter-subband transitions are given as functions of the magnetic field, temperature, and quantum well width. In narrow quantum wells, the phonon confinement becomes more important and should be taken into account in studying FWHM.

  16. Generation of acoustic terahertz waves in hybrid InGaN/GaN quantum wells

    Science.gov (United States)

    Mahat, Meg; Llopis, Antonia; Choi, Tae Youl; Periera, Sergio; Watson, Ian; Neogi, Arup

    2015-03-01

    We have carried out differential transmission measurements on InGaN/ GaN quantum wells with Au nanoparticles inserted inside V-pits with high filling fraction. We have observed acoustic wave packets generated with multiple THz frequencies as 0.12 THz from GaN buffer layer, 0.22 THz from Au-InGaN multiple quantum wells region, 0.07 THz from sapphire substrate, and 0.17 THz mixed signals from the sample. These THz wave packets are observed as a result of generation of coherent acoustic phonons propagating in hybrid Au-InGaN quantum wells. The study of these acoustic THz wave generation is crucial for the imaging of nanostructures.

  17. Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tabares, G.; Hierro, A., E-mail: adrian.hierro@upm.es; Lopez-Ponce, M.; Muñoz, E. [ISOM and Dpto. Ingeniería Electrónica, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Vinter, B.; Chauveau, J.-M. [CRHEA-CNRS, Av. B. Gregory, 06560 Valbonne (France); University of Nice Sophia Antipolis, Parc Valrose, 06102 Nice cedex 2 (France)

    2015-02-09

    Homoepitaxial ZnO/(Zn,Mg)O multiple quantum wells (MQWs) grown with m- and r-plane orientations are used to demonstrate Schottky photodiodes sensitive to the polarization state of light. In both orientations, the spectral photoresponse of the MQW photodiodes shows a sharp excitonic absorption edge at 3.48 eV with a very low Urbach tail, allowing the observation of the absorption from the A, B and C excitonic transitions. The absorption edge energy is shifted by ∼30 and ∼15 meV for the m- and r-plane MQW photodiodes, respectively, in full agreement with the calculated polarization of the A, B, and C excitonic transitions. The best figures of merit are obtained for the m-plane photodiodes, which present a quantum efficiency of ∼11%, and a specific detectivity D* of ∼6.4 × 10{sup 10} cm Hz{sup 1/2}/W. In these photodiodes, the absorption polarization sensitivity contrast between the two orthogonal in-plane axes yields a maximum value of (R{sub ⊥}/R{sub ||}){sub max} ∼ 9.9 with a narrow bandwidth of ∼33 meV.

  18. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

    Science.gov (United States)

    Wan, Yating; Li, Qiang; Liu, Alan Y.; Chow, Weng W.; Gossard, Arthur C.; Bowers, John E.; Hu, Evelyn L.; Lau, Kei May

    2016-05-01

    Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform.

  19. Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

    Institute of Scientific and Technical Information of China (English)

    REN Yun-Yun; XU Bo; WANG Zhan-Guo; LIU Ming; LONG Shi-Bing

    2007-01-01

    GaAs (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots (QDs). InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure.The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentially nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.

  20. Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming

    2008-01-01

    The serf-assembled InAs quantum dots (QDs) on GaAs substrates with low density (5×108cm-2) are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition.The macro-PL spectra exhibit three emission peaks at 1361,1280 and 1204nm,corresponding to the ground level (GS),the first excited state (ES1) and the second excited state (ES2) of the QDs,respectively,which are obtained when the GaAs capping layer/s grown using triethylgallium and tertiallybutylarsine.As a result of micro-PL,only a few peaks from individual dots have been observed.The exciton-biexciton behaviour was clearly observed at low temperature.

  1. Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Perez del Pino, A; Marcus, I C; Alonso, M I [Instituto de Ciencia de Materiales de Barcelona, Consejo Superior de Investigaciones Cientificas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra (Spain); Gyoergy, E; Roqueta, J, E-mail: aperez@icmab.es [Centro de Investigaciones en Nanociencia y Nanotecnologia, (CIN2-CSIC), Consejo Superior de Investigaciones Cientificas, Campus UAB, 08193 Bellaterra (Spain)

    2011-07-22

    Laser irradiation of Ge quantum dots (QDs) grown on Si(100) substrates by solid-source molecular beam epitaxy has been performed using a Nd:YAG laser (532 nm wavelength, 5 ns pulse duration) in a vacuum. The evolution of the Ge QD morphology, strain and composition with the number of laser pulses incident on the same part of the surface, have been studied using atomic force microscopy, scanning electron microscopy and Raman spectroscopy. The observed changes in the topographical and structural properties of the QDs are discussed in terms of Ge-Si diffusion processes. Numerical simulations have been developed for the investigation of the temperature evolution of the QDs during laser irradiation. The obtained results indicate that the thermal behaviour and structural variation of the nanostructures differ from conventional thermal annealing treatments and can be controlled by the laser parameters. Moreover, an unusual island motion has been observed under the action of subsequent laser pulses.

  2. Quantum well saturable absorber mirror with electrical control of modulation depth

    DEFF Research Database (Denmark)

    Liu, Xiaomin; Rafailov, E.U.; Livshits, D.

    2010-01-01

    A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.......A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V....

  3. Nonlinear excitation kinetics of biased quantum wells. Coherent dynamical screening effect

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Jepsen, Peter Uhd

    2006-01-01

    In this paper we describe a strongly nonlinear process of ultrafast photoexcitation of a biased quantum well. This process is governed by coherent dynamical screening, where the instantaneously polarized photoexcited carriers screen initial bias field. This results in a dynamic modification...... of the bandstructure of the quantum well, which is totally coherent with the temporal intensity distribution of the excitation laser pulse. We developed a time-resolved theoretical model of coherent dynamical screening, which predicts interesting fundamental consequences, such as nonlinear absorption and ultra......-broadband THz emission. The results of our THz and optical experiments are in good agreement with the theoretical model....

  4. Nonlinear photonic diode behavior in energy-graded core-shell quantum well semiconductor rod.

    Science.gov (United States)

    Ko, Suk-Min; Gong, Su-Hyun; Cho, Yong-Hoon

    2014-09-10

    Future technologies require faster data transfer and processing with lower loss. A photonic diode could be an attractive alternative to the present Si-based electronic diode for rapid optical signal processing and communication. Here, we report highly asymmetric photonic diode behavior with low scattering loss, from tapered core-shell quantum well semiconductor rods that were fabricated to have a large gradient in their bandgap energy along their growth direction. Local laser illumination of the core-shell quantum well rods yielded a huge contrast in light output intensities from opposite ends of the rod.

  5. Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

    Science.gov (United States)

    Beeler, M.; Bougerol, C.; Bellet-Amalric, E.; Monroy, E.

    2014-09-01

    THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum "trough" generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

  6. Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

    Energy Technology Data Exchange (ETDEWEB)

    Beeler, M.; Bellet-Amalric, E.; Monroy, E. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-Grenoble, INAC/SP2M/NPSC, 17 avenue des Martyrs, 38054 Grenoble (France); Bougerol, C. [Université Grenoble Alpes, 38000 Grenoble (France); Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2014-09-29

    THz intersubband transitions are reported down to 160 μm within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum “trough” generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 μm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures.

  7. Formulation of a self-consistent model for quantum well pin solar cells

    Science.gov (United States)

    Ramey, S.; Khoie, R.

    1997-04-01

    A self-consistent numerical simulation model for a pin single-cell solar cell is formulated. The solar cell device consists of a p-AlGaAs region, an intrinsic i-AlGaAs/GaAs region with several quantum wells, and a n-AlGaAs region. Our simulator solves a field-dependent Schrödinger equation self-consistently with Poisson and Drift-Diffusion equations. The emphasis is given to the study of the capture of electrons by the quantum wells, the escape of electrons from the quantum wells, and the absorption and recombination within the quantum wells. We believe this would be the first such comprehensive model ever reported. The field-dependent Schrödinger equation is solved using the transfer matrix method. The eigenfunctions and eigenenergies obtained are used to calculate the escape rate of electrons from the quantum wells, and the non-radiative recombination rates of electrons at the boundaries of the quantum wells. These rates together with the capture rates of electrons by the quantum wells are then used in a self-consistent numerical Poisson-Drift-Diffusion solver. The resulting field profiles are then used in the field-dependent Schrödinger solver, and the iteration process is repeated until convergence is reached. In a p-AlGaAs i-AlGaAs/GaAs n-AlGaAs cell with aluminum mole fraction of 0.3, with one 100 Å-wide 284 meV-deep quantum well, the eigenenergies with zero field are 36meV, 136meV, and 267meV, for the first, second and third subbands, respectively. With an electric field of 50 kV/cm, the eigenenergies are shifted to 58meV, 160meV, and 282meV, respectively. With these eigenenergies, the thermionic escape time of electrons from the GaAs Γ-valley, varies from 220 pS to 90 pS for electric fields ranging from 10 to 50 kV/cm. These preliminary results are in good agreement with those reported by other researchers.

  8. Experimental investigation of spin-orbit coupling in n-type PbTe quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Peres, M. L.; Monteiro, H. S.; Castro, S. de [Institute of Physics and Chemistry, Federal University of Itajubá, PB 50, 37500-903 Itajubá, MG (Brazil); Chitta, V. A.; Oliveira, N. F. [Institute of Physics, University of São Paulo, PB 66318, 05315-970 São Paulo, SP (Brazil); Mengui, U. A.; Rappl, P. H. O.; Abramof, E. [Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, PB 515, 12201-970 São José dos Campos, SP (Brazil); Maude, D. K. [Grenoble High Magnetic Field Laboratory, CNRS, BP 166, 38042 Grenoble Cedex 9 (France)

    2014-03-07

    The spin-orbit coupling is studied experimentally in two PbTe quantum wells by means of weak antilocalization effect. Using the Hikami-Larkin-Nagaoka model through a computational global optimization procedure, we extracted the spin-orbit and inelastic scattering times and estimated the strength of the zero field spin-splitting energy Δ{sub so}. The values of Δ{sub so} are linearly dependent on the Fermi wave vector (k{sub F}) confirming theoretical predictions of the existence of large spin-orbit coupling in IV-VI quantum wells originated from pure Rashba effect.

  9. Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry

    Indian Academy of Sciences (India)

    S Bhunia; P Banerji; T K Chaudhuri; A R Haldar; D N Bose; Y Aparna; M B Chettri; B R Chakraborty

    2000-06-01

    InGaAs/InP quantum wells of widths varying from 19 Å to 150 Å have been grown by MOVPE and the growth temperature optimized using photoluminescence and SIMS. It was thus found that for a 78 Å well the lowest PL linewidth of 12.7 meV at 12 K was obtained for growth at 625°C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610°C and 640°C. The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Å/s. However, while the barrier widths of 150 Å were in agreement with SIMS results, the well widths from SIMS were found to be much larger, due to a lower sputtering rate of InGaAs compared with InP. Quantitative comparison was made assuming the presence of InAsP and InGaAsP interface layers on either side of the wells and the relative sputtering rates determined.

  10. Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

    Science.gov (United States)

    Sun, Jason N.; Choi, Kwong-Kit; Olver, Kimberley A.; Fu, Richard X.

    2017-05-01

    Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

  11. The robustness of the quantum spin Hall effect to the thickness fluctuation in HgTe quantum wells

    Institute of Scientific and Technical Information of China (English)

    Guo Huai-Ming; Zhang Xiang-Lin; Feng Shi-Ping

    2012-01-01

    The quantum spin Hall effect (QSHE) was first realized in HgTe quantum wells (QWs),which remain the only known two-dimensional topological insulator so far.In this paper,we have systematically studied the effect of the thickness fluctuation of HgTe QWs on the QSHE.We start with the case of constant mass with random distributions,and reveal that the disordered system can be well described by a virtual uniform QW with an effective mass when the number of components is small.When the number is infinite and corresponds to the real fluctuation,we find that the QSHE is not only robust,but also can be generated by relatively strong fluctuation.Our results imply that the thickness fluctuation does not cause backscattering,and the QSHE is robust to it.

  12. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J. [Department of Physics, Imperial College, London SW7 2BZ (United Kingdom); Lackner, D.; Philipps, S. P.; Bett, A. W. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg (Germany); Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M. [Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo (Japan); Nasi, L.; Campanini, M. [CNR-IMEM Sezione di Parma, Parco Area delle Scienze 37/A, 43010 Fontanini-Parma (Italy)

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  13. Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

    Science.gov (United States)

    Piccardo, Marco; Li, Chi-Kang; Wu, Yuh-Renn; Speck, James S.; Bonef, Bastien; Farrell, Robert M.; Filoche, Marcel; Martinelli, Lucio; Peretti, Jacques; Weisbuch, Claude

    2017-04-01

    Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0% to 28%) corresponds to a typical Urbach energy of 20 meV. A three-dimensional absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schrödinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below-band-gap absorption is particularly efficient in near-ultraviolet emitting quantum wells. When reverse biasing the device, the well-to-barrier below-band-gap absorption exhibits a red-shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue-shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the localization theory demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.

  14. Tuning Spin- and Valley-Degeneracies in Multicomponent Quantum Well Transport

    Science.gov (United States)

    Prabhu-Gaunkar, Sunanda

    The theme of this thesis is manipulation of spin and valley degeneracies in two-dimensional electron systems (2DES) by locally or globally controlling the energy gaps between the two spin states or multiple valley states. Degeneracies in 2DES can be controlled internally or externally with magnetic, strain, and electrostatic fields. With magneto-transport measurements we can probe these spin and valley energy gaps. Spin degeneracies in quantum wells (QW) can be controlled with magnetic field by changing the tilt angle of the field with respect to the sample. Valley degeneracies can be controlled principally by growing QWs of a certain orientation and width. Furthermore, the valley energies can be controlled externally by applying strain or electrostatic gated devices. We first consider transport signatures of controlled spin degeneracies. Magnetic fields can be used to control spin degeneracies and spin gaps by tuning the tilt angle of the field with respect to the sample plane. These spin dependencies can be observed at different tilt angles by conducting measurements of the longitudinal and Hall resistance. In particular, transport measurements in a Si/SiGe spin-split valley degenerate 2DES demonstrates anomalous rise of the transverse Hall resistance at certain quantized plateaus. With systematic tilted field data we map this anomaly to the longitudinal resistance, and also to directional derivatives of the longitudinal resistance. We also develop a theoretical model for estimating the spin-degenerate and spin-split density of states which we fit using the data on longitudinal resistance. We input the exactly calculated spin gaps at every tilt angle in the edge state model of quantum Hall effect, and we are able to provide a microscopic justification to the experimentally observed anomalous features by introducing a constant energy density of disordered states in our model. We next consider transport signatures of controlled valley degeneracies. Valley

  15. Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)

    Science.gov (United States)

    Wiesner, Michael; Bommer, Moritz; Schulz, Wolfgang-Michael; Etter, Martin; Werner, Jens; Oehme, Michael; Schulze, Jörg; Jetter, Michael; Michler, Peter

    2012-04-01

    An ultrathin virtual Ge substrate (GeVS) with low defect density was realized on CMOS-compatible Si(001) by molecular beam epitaxy. On top, III-V layers were deposited by metal-organic vapor-phase epitaxy, at which diffusion of Ge was successfully suppressed. Nonclassical light emitters, based on InP quantum dots (QDs), were realized on a thin GaAs buffer (thickness ≈ 1 µm). The quantum dots show emission in the red spectral region, meeting the range of the highest detection efficiency of silicon avalanche photodiodes. The decay dynamics and emission characteristics of single QDs were investigated. Autocorrelation measurements prove single-photon emission with a value of g(2)(0)=0.32.

  16. Electroluminescence Studies on Longwavelength Indium Arsenide Quantum Dot Microcavities Grown on Gallium Arsenide

    Science.gov (United States)

    2011-12-01

    K.M. Groom, S. MacNeil, R.A. Hogg, R. Smallwood. “Quantum Dot Superluminescent Diodes for Optical Coherence Tomography: Skin Imaging” IEEE Journal of... diodes (RCLEDs) and three 1.3 µm vertical cavity surface emitting laser (VCSEL) samples were fabricated and electro-optically characterized over a...layer-by-layer, or Frank-van der Merwe growth [18] .................................26 2.17. Active region of diode lasers representing a layer

  17. Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors

    Institute of Scientific and Technical Information of China (English)

    WANG Zhi-Cheng; XU Bo; CHEN Yong-Hai; SHI Li-Wei; LIANG Zhi-Mei; WANG Zhan-Guo

    2008-01-01

    Theoretical calculation of electronic energy levels of an asymmetric InAs/ InGaAs/ GaAs quantum-dots-in-a-well (DWELL) structure for infrared photodetectors is performed in the framework of effective-mass envelope-function theory. Our calculated results show that the electronic energy levels in quantum dots (QDs) increase when the asymmetry increases and the ground state energy increases faster than the excited state energies. Furthermore, the results also show that the electronic energy levels in QDs decrease as the size of QDs and the width of quantum well (QW) in the asymmetric DWELL structure increase. Additionally, the effects of asymmetry, the size of QDs and the width of QW on the response peak of asymmetry DWELL photodetectors are also discussed.

  18. Spin-related transport phenomena in HgTe-based quantum well structures

    Energy Technology Data Exchange (ETDEWEB)

    Koenig, Markus

    2007-12-15

    Within the scope of this thesis, spin related transport phenomena have been investigated in HgTe/Hg{sub 0.3}Cd{sub 0.7}Te quantum well structures. In our experiments, the existence of the quantum spin Hall (QSH) state was successfully demonstrated for the first time and the presented results provide clear evidence for the charge transport properties of the QSH state. Our experiments provide the first direct observation of the Aharonov-Casher (AC) effect in semiconductor structures. In conclusion, HgTe quantum well structures have proven to be an excellent template for studying spin-related transport phenomena: The QSH relies on the peculiar band structure of the material and the existence of both the spin Hall effect and the AC effect is a consequence of the substantial spin-orbit interaction. (orig.)

  19. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    Science.gov (United States)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  20. Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates.

    Science.gov (United States)

    Bietti, Sergio; Esposito, Luca; Fedorov, Alexey; Ballabio, Andrea; Martinelli, Andrea; Sanguinetti, Stefano

    2015-12-01

    We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed when substrate temperature is increased. Morphological characterizations performed by atomic force microscopy show that annealing process is able to change density and aspect ratio of InAs quantum dots and also to narrow size distribution.

  1. Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well

    Institute of Scientific and Technical Information of China (English)

    LIANG Zhi-Mei; JIN Can; JIN Peng; WU Ju; WANG Zhan-Guo

    2009-01-01

    Both the peak position and linewidth in the photoluminescence spectrum of the InAs/GaAs quantum dots usually vary in an anomalous way with increasing temperature. Such anomalous optical behaviour is eliminated by inserting an In0.2Ga0.8As quantum well below the quantum dot layer in molecular beam epitaxy. The insensitivity of the photoluminescence spectra to temperature is explained in terms of the effective carrier redistribution between quantum dots through the ln0.2Ga0.8As quantum well.

  2. High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

    KAUST Repository

    Muhammed, Mufasila

    2017-09-11

    We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.

  3. Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency

    Science.gov (United States)

    Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Zhang, Xiaodong; Lu, Zhijian; Montes, Jossue; Iza, Michael; DenBaars, Steven P.; Nakamura, Shuji; Zhao, Yuji

    2017-04-01

    We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on the nonpolar m-plane and semipolar ( 20 2 ¯ 1 ) plane bulk GaN substrates. The optical properties and photovoltaic performance of the nonpolar and semipolar InGaN solar cells were systematically studied, and the results were compared to the conventional polar c-plane devices. The absorption spectra, current density-voltage (J-V) characteristics, external quantum efficiency (EQE), and internal quantum efficiency (IQE) were measured for nonpolar m-plane, semipolar ( 20 2 ¯ 1 ) plane, and polar c-plane InGaN/GaN MQW solar cells. Nonpolar m-plane InGaN/GaN MQW solar cells showed the best performance across all devices, with a high open-circuit voltage of 2.32 V, a low bandgap-voltage offset of 0.59 V, and the highest EQE and IQE. In contrast, the polar c-plane device showed the lowest EQE despite the highest absorption spectra. This huge difference is attributed to the better carrier transport and collection on nonpolar m-plane devices due to the reduced polarization effects, which were further confirmed by bias-dependent EQE measurements and energy band diagram simulations. This study demonstrates the high potential of nonpolar and semipolar InGaN solar cells and can serve as guidance for the future design and fabrication of high efficiency III-nitride solar cells.

  4. SiN{sub x}-induced intermixing in AlInGaAs/InP quantum well through interdiffusion of group III atoms

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ko-Hsin; Thomas, Kevin; Gocalinska, Agnieszka; Manganaro, Marina; Corbett, Brian [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Pelucchi, Emanuele; Peters, Frank H. [Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland); Department of Physics, University College Cork, Cork (Ireland)

    2012-11-01

    We analyze the composition profiles within intermixed and non-intermixed AlInGaAs-based multiple quantum wells structures by secondary ion mass spectrometry and observe that the band gap blue shift is mainly attributed to the interdiffusion of In and Ga atoms between the quantum wells and the barriers. Based on these results, several AlInGaAs-based single quantum well (SQW) structures with various compressive strain (CS) levels were grown and their photoluminescence spectra were investigated after the intermixing process involving the encapsulation of thin SiN{sub x} dielectric films on the surface followed by rapid thermal annealing. In addition to the annealing temperature, we report that the band gap shift can be also enhanced by increasing the CS level in the SQW. For instance, at an annealing temperature of 850 Degree-Sign C, the photoluminescence blue shift is found to reach more than 110 nm for the sample with 1.2%-CS SQW, but only 35 nm with 0.4%-CS SQW. We expect that this relatively larger atomic compositional gradient of In (and Ga) between the compressively strained quantum well and the barrier can facilitate the atomic interdiffusion and it thus leads to the larger band gap shift.

  5. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Redaelli, L.; Mukhtarova, A.; Valdueza-Felip, S.; Ajay, A.; Durand, C.; Eymery, J.; Monroy, E. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», CEA-Grenoble, INAC/SP2M, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France); Bougerol, C.; Himwas, C. [Université Grenoble Alpes, 38000 Grenoble (France); CEA-CNRS Group «Nanophysique et semiconducteurs», Institut Néel-CNRS, 25 avenue des Martyrs, 38042 Grenoble cedex 9 (France); Faure-Vincent, J. [Université Grenoble Alpes, 38000 Grenoble (France); CNRS, INAC-SPRAM, F-38000 Grenoble (France); CEA, INAC-SPRAM, F-38000 Grenoble (France)

    2014-09-29

    We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In{sub 0.12}Ga{sub 0.88}N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance.

  6. Photoelectric behaviour of lattice-matched GaAs/Alx Ga1-xAs quantum well electrodes

    Institute of Scientific and Technical Information of China (English)

    刘尧; 肖绪瑞; 曾一平; 闫春辉; 郑海群; 孙殿照

    1997-01-01

    The photoelectric properties of the lattice-matched GaAs/AlxGa1-xAs quantum well electrodes and the influence of the electrode structure such as well width, the thickness of outer barrier and the number of period were studied in a nonaqueous electrolyte. A new kind of structure of multiple quantum well electrode with varied well width, possessing the quantum yield three times that of GaAs bulk materials, was designed and fabricated.

  7. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Science.gov (United States)

    Liu, Hong-Bo; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Zhou, Fan; Wang, Bao-Jun; Wang, Wei

    2008-10-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6mW. The wavelength tuning range covers 30nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

  8. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Bo; ZHAO Ling-Juan; PAN Jiao-Qing; ZHU Hong-Liang; ZHOU Fan; WANG Bao-Jun; WANG Wei

    2008-01-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well eleetroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI)for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections,which reduces internal absorption loss. The experimental results show that the threshold current Ith=62 mA,and output power reaches 3.6 roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of -5 V.

  9. A New Type of Photoelectric Response in a Double Barrier Structure with a Wide Quantum Well

    Institute of Scientific and Technical Information of China (English)

    ZHOU Xia; ZHENG Hou-Zhi

    2005-01-01

    @@ We have calculated the photoelectric response in a specially designed double barrier structure. It has been verified that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent.

  10. Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells

    DEFF Research Database (Denmark)

    Larionov, A. V.; Timofeev, V. B.; Hvam, Jørn Märcher;

    2000-01-01

    Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the...

  11. Intrinsic optical confinement for ultrathin InAsN quantum well superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Sakri, A.; Robert, C.; Pedesseau, L.; Cornet, C.; Durand, O.; Even, J.; Jancu, J.-M. [Université Europeenne de Bretagne, INSA Rennes,France and CNRS, UMR 6082, Foton, 20 avenues des Buttes de Coësmes, 35708 Rennes (France)

    2013-12-04

    We study energy-band engineering with InAsN monolayer in GaAs/GaP quantum well structure. A tight-binding calculation indicates that both type I alignment along with direct band-gap behavior can be obtained. We show that the optical transitions are less sensitive to the position of the probe.

  12. Exciton dynamics in GaAs/AlxGa1-xAs quantum wells

    DEFF Research Database (Denmark)

    Litvinenko, K.; Birkedal, Dan; Lyssenko, V. G.

    1999-01-01

    The changes induced in the optical absorption spectrum of a GaAs/AlxGa1-xAs multiple quantum well due to a photoexcited carrier distribution are reexamined. We use a femtosecond pump-probe technique to excite excitons and free electron-hole pairs. We find that for densities up to 10(11) cm(-2...

  13. Localized excitons in quantum wells show spin relaxation without coherence loss

    DEFF Research Database (Denmark)

    Zimmermann, R.; Langbein, W.; Runge, E.;

    2001-01-01

    The coherence in the secondary emission from quantum well excitons is studied using the speckle method. Analysing the different polarization channels allows to conclude that (i) no coherence loss occurs in the cross-polarized emission, favouring spin beating instead of spin dephasing, and that (i...

  14. Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells

    Science.gov (United States)

    Yuan, Jian-Hui; Chen, Ni; Zhang, Yan; Mo, Hua; Zhang, Zhi-Hai

    2016-03-01

    Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells are studied theoretically. Both the second-harmonic generation susceptibility and nonlinear optical rectification depend dramatically on the direction and the strength of the electric field. Numerical results show that both the second-harmonic generation susceptibility and nonlinear optical rectification are always weakened as the electric field increases where the direction of the electric field is along the growth direction of the quantum wells, which is in contrast to the conventional case. However, the second-harmonic generation susceptibility is weakened, but the nonlinear optical rectification is strengthened as the electric field increases where the direction of the electric field is against the growth direction of the quantum wells. Also it is the blue (or red) shift of the resonance that is induced by increasing of the electric field when the direction of the electric field is along (or against) the growth direction of the quantum wells. Finally, the resonant peak and its corresponding to the resonant energy are also taken into account.

  15. Improvement of light-current characteristic linearity in a quantum well laser with asymmetric barriers

    DEFF Research Database (Denmark)

    Zubov, F. I.; Zhukov, A. E.; Shernyakov, Yu M.;

    2014-01-01

    The effect of asymmetric barriers on the light-current characteristic (LCC) of a quantum well laser was studied theoretically and experimentally. It is shown that the utilization of asymmetric barriers in a waveguide prevents the nonlinearity of LCC and, consequently, allows rising of the maximum...

  16. Energy Spectrum of a Positronium Negative Ion in a Parabolic Quantum Well

    Institute of Scientific and Technical Information of China (English)

    XIEWen-Fang

    2002-01-01

    The method of few-body physics is applied to calculating the energy levels of low-lying states of a positronium negative ion in a parabolic quantum well.The results show that the energy levels of a positronium negative ion in two-dimensional case are lower than those in three-dimensional case.

  17. Energy Spectrum of a Positronium Negative Ion in a Parabolic Quantum Well

    Institute of Scientific and Technical Information of China (English)

    XIE Wen-Fang

    2002-01-01

    The method of few-body physics is applied to calculating the energy levels of low-lying states ofa positro-nium negative ion in a parabolic quantum well. The results show that the energy levels of a positronium negativeion intwo-dimensional case are lower than those in three-dimensional case.

  18. Spin injection from Co2MnGa into an InGaAs quantum well

    DEFF Research Database (Denmark)

    Hickey, M. C.; Damsgaard, Christian Danvad; Holmes, S. N.;

    2008-01-01

    We have demonstrated spin injection from a full Heusler alloy Co2MnGa thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of 5 K. The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin...

  19. Interaction-induced effects in the nonlinear coherent response of quantum-well excitons

    DEFF Research Database (Denmark)

    Wagner, Hans Peter; Schätz, A.; Langbein, Wolfgang Werner;

    1999-01-01

    Interaction-induced processes are studied using the third-order nonlinear polarization created in polarization-dependent four-wave-mixing experiments (FWM) on a ZnSe single quantum well. We discuss their influence by a comparison of the experimental FWM with calculations based on extended optical...

  20. Thermalization of Hot Free Excitons in ZnSe-Based Quantum Wells

    DEFF Research Database (Denmark)

    Hoffmann, J.; Umlauff, M.; Kalt, H.

    1997-01-01

    Thermalization of hot-exciton populations in ZnSe quantum wells occurs on a time scale of 100 ps. Strong exciton-phonon coupling in II-VI semiconductors leads to a direct access to the thermalization dynamics via time-resolved spectroscopy of phonon-assisted luminescence. The experimental spectra...

  1. Closed form solution for a double quantum well using Gr\\"obner basis

    CERN Document Server

    Acus, A

    2011-01-01

    Analytical expressions for spectrum, eigenfunctions and dipole matrix elements of a square double quantum well (DQW) are presented for a general case when the potential in different regions of the DQW has different heights and effective masses are different. This was achieved by Gr\\"obner basis algorithm which allows to disentangle the resulting coupled polynomials without explicitly solving the transcendental eigenvalue equation.

  2. On the cascade capture of electrons at donors in GaAs quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Aleshkin, V. Ya., E-mail: aleshkin@ipmras.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  3. Many-Body Effect in Spin Dephasing in n-Type GaAs Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    WENG Ming-Qi; WU Ming-Wei

    2005-01-01

    @@ By constructing and numerically solving the kinetic Bloch equations we perform a many-body study of the spin dephasing due to the D'yakonov-Perel' effect in n-type GaAs (100) quantum wells for high temperatures.

  4. Exciton dynamics in near-surface InGaN quantum wells coupled to colloidal nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii; Shirazi, Roza; Yvind, Kresten;

    2013-01-01

    We study non-radiative energy transfer between InGaN quantum wells and colloidal InP nanocrystals separated by sub-10nm distance. A significant non-radiative energy transfer between the two layers is accompanied by reduced surface recombination in InGaN....

  5. Room-temperature near-field reflection spectroscopy of single quantum wells

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Hvam, Jørn Marcher; Madsen, Steen;

    1997-01-01

    . This technique suppresses efficiently the otherwise dominating far-field background and reduces topographic artifacts. We demonstrate its performance on a thin, strained near-surface CdS/ZnS single quantum well at room temperature. The optical structure of these topographically flat samples is due to Cd...

  6. Two-Dimensional GaAs/AlGaAs Multiple Quantum Well Spatial Light Modulators

    Institute of Scientific and Technical Information of China (English)

    Qin Wang; Jan Borglind; Smilja Becanovic; Stéphane Junique; Daniel (A)gren; Bertrand Noharet; Linda H(o)glund; Olof (O)berg; Erik Petrini; Jan Y. Andersson; Hedda Malm

    2003-01-01

    Multiple quantum well spatial light modulators with 128x128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication processes are described and compared.

  7. Properties of Excitons Bound to Neutral Donors in GaAs Quantum-Well Wires

    Institute of Scientific and Technical Information of China (English)

    LIU Jian-Jun; WANG Xue-Feng

    2005-01-01

    @@ In the effective mass approximation, the binding energy of an exciton bound to a neutral donor (D0, X) is calcu-lated variationally for rectangular GaAs quantum-well wires (QWWs) by using a three-parameter wavefunction.

  8. Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers....

  9. Terahertz study of ultrafast carrier dynamics in InGa/GaN multiple quantum wells

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    2009-01-01

    Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells is measured by time-resolved terahertz spectroscopy. The built-in piezoelectric field is initially screened by photoexcited, polarized carriers, and is gradullay restored as the carriers recombine. We observe a nonexponential decay...

  10. Monte Carlo modeling of the dual-mode regime in quantum-well and quantum-dot semiconductor lasers.

    Science.gov (United States)

    Chusseau, Laurent; Philippe, Fabrice; Disanto, Filippo

    2014-03-10

    Monte Carlo markovian models of a dual-mode semiconductor laser with quantum well (QW) or quantum dot (QD) active regions are proposed. Accounting for carriers and photons as particles that may exchange energy in the course of time allows an ab initio description of laser dynamics such as the mode competition and intrinsic laser noise. We used these models to evaluate the stability of the dual-mode regime when laser characteristics are varied: mode gains and losses, non-radiative recombination rates, intraband relaxation time, capture time in QD, transfer of excitation between QD via the wetting layer... As a major result, a possible steady-state dual-mode regime is predicted for specially designed QD semiconductor lasers thereby acting as a CW microwave or terahertz-beating source whereas it does not occur for QW lasers.

  11. Quantum size effects in TiO2 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  12. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    OpenAIRE

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier...

  13. Giant kerr nonlinearity, controlled entangled photons and polarization phase gates in coupled quantum-well structures.

    Science.gov (United States)

    Zhu, Chengjie; Huang, Guoxiang

    2011-11-07

    We study linear and nonlinear propagations of probe and signal pulses in a multiple quantum-well structure with a four-level, double Λ-type configuration. We show that slow, mutually matched group velocities and giant Kerr nonlinearity of the probe and the signal pulses may be achieved with nearly vanishing optical absorption. Based on these properties we demonstrate that two-qubit quantum polarization phase gates can be constructed and highly entangled photon pairs may be produced. In addition, we show that coupled slow-light soliton pairs with very low generation power can be realized in the system.

  14. Long-wavelength quantum well infrared photodetector (QWIP) research at Jet Propulsion Laboratory

    Science.gov (United States)

    Gunapala, Sarath D.; Liu, John K.; Sundaram, Mani; Bandara, Sumith V.; Shott, C. A.; Hoelter, Theodore R.; Maker, Paul D.; Muller, Richard E.

    1996-06-01

    One of the simplest device realizations of the classic particle-in-a-box problem of basic quantum mechanics is the quantum well infrared photodetector (QWIP). Optimization of the detector design and material growth and processing have culminated in the realization of a 15 micrometer cutoff 128 by 128 focal plane array camera and a camera with large (256 by 256 pixel) focal plane array of QWIPs which can see at 8.5 micrometer, holding forth great promise for a variety of applications in the 6 - 25 micrometer wavelength range. This paper discusses the physics of the QWIP and QWIP technology development at Jet Propulsion Laboratory.

  15. Low-temperature illumination and annealing of ultrahigh quality quantum wells

    Science.gov (United States)

    Samani, M.; Rossokhaty, A. V.; Sajadi, E.; Lüscher, S.; Folk, J. A.; Watson, J. D.; Gardner, G. C.; Manfra, M. J.

    2014-09-01

    The effects of low-temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the two-dimensional electron gas (2DEG) electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed that yields an energy gap of 600 mK for the 5/2 state.

  16. Polarised two-photon excitation of quantum well excitons for manipulation of optically pumped terahertz lasers

    Energy Technology Data Exchange (ETDEWEB)

    Slavcheva, G., E-mail: gsk23@bath.ac.uk [Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom); Kavokin, A.V., E-mail: A.Kavokin@soton.ac.uk [School of Physics and Astronomy, University of Southampton, Highfield, Southampton SO17 1BJ (United Kingdom); Spin Optics Laboratory, St. Petersburg State University, 1, Ulyanovskaya 198504 (Russian Federation)

    2014-11-15

    Optical pumping of excited exciton states in a semiconductor quantum well embedded in a microcavity is a tool for realisation of ultra-compact terahertz (THz) lasers based on stimulated optical transition between excited (2p) and ground (1s) exciton state. We show that the probability of two-photon absorption by a 2p-exciton is strongly dependent on the polarisation of both pumping photons. Five-fold variation of the threshold power for terahertz lasing by switching from circular to co-linear pumping is predicted. We identify photon polarisation configurations for achieving maximum THz photon generation quantum efficiency.

  17. InGaAsP/InP Double Quantum Well Intermixing Induced by Phosphorus Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    CHEN Jie; ZHAO Jie; WANG Yong-chen; HAN De-jun

    2005-01-01

    A quantum well intermixing(QWI) investigation on double quantum well(DQW) structure with two different emitting wavelength caused by phosphorus ion implantation and following rapid thermal annealing (RTA) was carried out by means of photoluminescence(PL). The ion implantation was performed at the energy of 120 kev with the dose ranging from 1 × 1011 cm-2 to 1× 1014 cm-2. The RTA was performed at the temperature of 700 ℃ for 30 s under pure nitrogen protection. The PL measurement implied that the band gap blue-shift from the upper well increases with the ion dose faster than that from lower well and the PL peaks from both QWs remained well separated under the lower dose implantation(~1×1011 cm-2 ) indicating that the implant vacancy distribution affects the QWI. When the ion dose is over ~ 1 × 1012 cm-2 , the band gap blue-shift from both wells increases with the ion dose and finally the two peaks merge together as one peak indicating the ion implantation caused a total intermixing of both quantum wells.

  18. Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells

    CERN Document Server

    Yu Guang You; Zhang, J Y; Zheng, Z H; Yang, B J; Zhao Xiao Wei; Shen De Zhen; Kong Xiang Gui

    1999-01-01

    Temperature-dependent exciton recombination in asymmetrical ZnCdSe/ZnSe double quantum wells is studied by recording photoluminescence spectra and photoluminescence decay spectra. The exciton tunnelling from the wide well to the narrow well and the thermal dissociation of excitons are two factors that influence the exciton recombination in this structure. In the narrow well, both of the two processes decrease the emission intensity, whereas, in the wide well, these two processes have contrary influences on the exciton density. The change of the emission intensity depends on which is the stronger one. (author)

  19. Size and quality control of fast grown CdS quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Fregnaux, Mathieu [Laboratoire de Physique des Milieux Denses, Universite Paul Verlaine - Metz, 1 Boulevard Arago, 57078 Metz (France); Laboratoire de Spectrometrie de Masse et Chimie Laser, Universite Paul Verlaine - Metz, 1 Boulevard Arago, 57078 Metz (France); Dalmasso, Stephane; Laurenti, Jean-Pierre [Laboratoire de Physique des Milieux Denses, Universite Paul Verlaine - Metz, 1 Boulevard Arago, 57078 Metz (France); Gaumet, Jean-Jacques [Laboratoire de Spectrometrie de Masse et Chimie Laser, Universite Paul Verlaine - Metz, 1 Boulevard Arago, 57078 Metz (France)

    2012-08-15

    The synthesis of high quality II-VI semiconductor quantum dots (QDs) is fundamental for developing new devices in several applications such as biomarkers, solar cells or blue-UV lasers. These emerging technologies are funded on the size-dependent optical properties of the QDs. Consequently, it is a crucial aspect to get insight into different ways for syntheses of their nanosized particles. In this work, we use two different QD elaboration methods: (i) a single source precursor thermal growth methodology and (ii) a microwave synthetic route. Using both protocols, high quality small QDs (Oe < 5 nm) are produced. Both growing techniques offer the advantage to be simple and fast: 2 hours (i) and less than 25 minutes (ii) in duration, growth temperatures do not exceed 280 C. For both elaboration procedures, we report a unique physics/chemistry cross-disciplinary study on these small size QDs: mass spectrometry (MS) technique provides background data about composition, size and stability of particles; crystalline structure and size distribution of the QDs are obtained from X-ray diffraction (XRD) and transmission electron microscopy (TEM); room temperature (RT) optical spectrometry of nanodispersions - photoluminescence (PL) and absorption - reveals quantum size effects. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Two particles in a double well: illustrating the connection between entanglement and the speed of quantum evolution

    Energy Technology Data Exchange (ETDEWEB)

    Curilef, S [Departamento de Fisica, Universidad Catolica del Norte, Antofagasta (Chile); Zander, C [Physics Department, University of Pretoria, Pretoria 0002 (South Africa); Plastino, A R [Physics Department, University of Pretoria, Pretoria 0002 (South Africa)

    2006-09-01

    The connection between entanglement and the speed of quantum evolution (as measured by the time needed to reach an orthogonal state) is discussed in the case of two quantum particles moving in a one-dimensional double well. The aforementioned connection offers an interesting opportunity of discussing the basic features of quantum entanglement within an elementary context, using concepts and methods usually included in university courses of quantum mechanics.

  1. Control of the probe absorption in coupled quantum wells in two dimensions

    Science.gov (United States)

    Kang, Chengxian; Ma, Yangcheng; Wang, Zhiping; Yu, Benli

    2016-06-01

    We investigate the probe absorption of a weak probe field in two dimensions (the so-called two-dimensional probe absorption) in an asymmetric two coupled quantum wells. It is found that, due to the joint quantum interference induced by the standing-wave and coherent coupling fields, the probe absorption can be easily controlled via adjusting the system parameters in two dimensions. Most importantly, the pattern of probe absorption can be localized at a particular position and the maximal probability of finding the pattern in one period of the standing-wave fields reaches unity by properly adjusting the system parameters. Thus, our scheme may provide some technological applications in solid-state optoelectronics and quantum information science.

  2. Quantum wells based on Si/SiO{sub x} stacks for nanostructured absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Berghoff, B.; Suckow, S.; Roelver, R.; Spangenberg, B.; Kurz, H. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Sologubenko, A.; Mayer, J. [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen (Germany); Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, 52426 Juelich (Germany)

    2010-11-15

    We report on electrical transport and quantum confinement in thermally annealed Si/SiO{sub x} multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO{sub x} stacks leads to precipitation of excess Si from the SiO{sub x} layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO{sub 2} system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO{sub 2} stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. (author)

  3. Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

    Directory of Open Access Journals (Sweden)

    H. J. Huang

    2015-11-01

    Full Text Available The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC, or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

  4. Plasmonic photocatalytic reactions enhanced by hot electrons in a one-dimensional quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H. J., E-mail: hjhuang@narlabs.org.tw, E-mail: hhjhuangkimo@gmail.com; Liu, B. H.; Lin, C. T. [Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 300, Taiwan (China); Su, W. S. [National Center for High-performance Computing, Hsinchu 300, Taiwan and Department of Physics, National Chung Hsing University, Taichung 402, Taiwan (China)

    2015-11-15

    The plasmonic endothermic oxidation of ammonium ions in a spinning disk reactor resulted in light energy transformation through quantum hot charge carriers (QHC), or quantum hot electrons, during a chemical reaction. It is demonstrated with a simple model that light of various intensities enhance the chemical oxidization of ammonium ions in water. It was further observed that light illumination, which induces the formation of plasmons on a platinum (Pt) thin film, provided higher processing efficiency compared with the reaction on a bare glass disk. These induced plasmons generate quantum hot electrons with increasing momentum and energy in the one-dimensional quantum well of a Pt thin film. The energy carried by the quantum hot electrons provided the energy needed to catalyze the chemical reaction. The results indicate that one-dimensional confinement in spherical coordinates (i.e., nanoparticles) is not necessary to provide an extra excited state for QHC generation; an 8 nm Pt thin film for one-dimensional confinement in Cartesian coordinates can also provide the extra excited state for the generation of QHC.

  5. Raman gain in a Boron based Group-III nitride quantum well

    Science.gov (United States)

    Narayana Moorthy, N.; John Peter, A.; Lee, Chang Woo

    2014-06-01

    Electron Raman scattering of a hydrogenic impurity is studied using exact diagonalization method in a BxGa1-xN/BN coupled quantum well. Intersubband scattering rates, in a Boron based wide band gap GaN, are considered. BxGa1-xN semiconductor is taken as inner quantum well and BN material is taken as barrier material. The effect of quantum confinement on the differential cross section of Raman scattering, with and without the impurity, is obtained. The built-in internal electric field is included throughout the calculations. The third order susceptibility with the incident photon energy is calculated with and without doping impurity. The donor hydrogenic binding energy and its low lying excited states are computed taking into account the geometrical confinement. The binding energy is obtained for various impurity position and the Boron alloy content in BxGa1-xN quantum well. It is brought out that the geometrical confinement and built-in internal electric fields have great influence on the optical properties of the semiconductor.

  6. Systematic study of surface morphology, photoluminescence efficiency, and spin-detection sensitivity in (110)-oriented GaAs/AlGaAs quantum wells

    Science.gov (United States)

    Iba, Satoshi; Saito, Hidekazu; Watanabe, Ken; Ohno, Yuzo; Yuasa, Shinji

    2016-11-01

    We prepared (110)-oriented GaAs/AlGaAs multiple-quantum-well (MQW) samples by molecular beam epitaxy (MBE) under different growth conditions, and conducted systematic measurements of surface morphology, photoluminescence (PL), and spin-detection sensitivity at room temperature. Excellent surface flatness and high PL intensity were observed for the samples grown at temperatures ≥450 °C and As4/Ga flux ratios ≥40. It was found that the PL intensity of (110) MQWs was higher than that of the conventional (100) MQWs grown using the same MBE system. At the same time, we confirmed that the spin-detection sensitivity of (110) MQWs we obtained was an order of magnitude higher than that of the (100) MQWs. These results suggest that the newly developed (110) MQWs indeed have greater advantages than the conventional (100) MQWs for use in emerging spin-optical devices such as spin-controlled lasers.

  7. Current-injected light emission of epitaxially grown InAs/InP quantum dots on directly bonded InP/Si substrate

    Science.gov (United States)

    Matsumoto, Keiichi; Zhang, Xinxin; Kishikawa, Junya; Shimomura, Kazuhiko

    2015-03-01

    Current-injected light emission was confirmed for metal organic vapor phase epitaxy (MOVPE) grown (Ga)InAs/InP quantum dots (QDs) on directly bonded InP/Si substrate. The InP/Si substrate was prepared by directly bonding of InP thin film and a Si substrate using a wet-etching and annealing process. A p-i-n LED structure including Stranski-Krastanov (Ga)InAs/InP QDs was grown by MOVPE on an InP/Si substrate. No debonding between Si substrate and InP layer was observed, even after MOVPE growth and operation of the device under continuous wave conditions at RT. The photoluminescence, current/voltage, and electroluminescence characteristics of the device grown on the InP/Si substrate were compared with reference grown on an InP substrate.

  8. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Massimo Tallarida

    2014-01-01

    Full Text Available We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  9. InAs/GaAs quantum-dot light emitters monolithically grown on Si substrate

    Science.gov (United States)

    Liao, M.; Chen, S.; Tang, M.; Wu, J.; Jiang, Q.; Seeds, A.; Liu, H.

    2016-03-01

    We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111°C with a lasing threshold of 200 A/cm2, and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of ~114 nm centered at ~1258 nm and maximum output power of 2.6 mW has been achieved.

  10. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  11. Quantum-Carnot engine for particle confined to 2D symmetric potential well

    Science.gov (United States)

    Belfaqih, Idrus Husin; Sutantyo, Trengginas Eka Putra; Prayitno, T. B.; Sulaksono, Anto

    2015-09-01

    Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well.

  12. Quantum-Carnot engine for particle confined to 2D symmetric potential well

    Energy Technology Data Exchange (ETDEWEB)

    Belfaqih, Idrus Husin, E-mail: idrushusin21@gmail.com; Sutantyo, Trengginas Eka Putra, E-mail: trengginas.eka@gmail.com; Prayitno, T. B., E-mail: teguh-budi@unj.ac.id [Department of Physics, Universitas Negeri Jakarta, Jl. Pemuda Rawamangun, Jakarta Timur, 13220 (Indonesia); Sulaksono, Anto, E-mail: anto.sulaksono@sci.ui.ac.id [Department of Physics, Universitas Indonesia, Depok, Jawa Barat, 164242 (Indonesia)

    2015-09-30

    Carnot model of heat engine is the most efficient cycle consisting of isothermal and adiabatic processes which are reversible. Although ideal gas usually used as a working fluid in the Carnot engine, Bender used quantum particle confined in 1D potential well as a working fluid. In this paper, by following Bender we generalize the situation to 2D symmetric potential well. The efficiency is express as the ratio of the initial length of the system to the final length of the compressed system. The result then is shown that for the same ratio, 2D potential well is more efficient than 1D potential well.

  13. Limits to mobility in InAs quantum wells with nearly lattice-matched barriers

    Science.gov (United States)

    Shojaei, B.; Drachmann, A. C. C.; Pendharkar, M.; Pennachio, D. J.; Echlin, M. P.; Callahan, P. G.; Kraemer, S.; Pollock, T. M.; Marcus, C. M.; Palmstrøm, C. J.

    2016-12-01

    The growth and density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to unintentionally doped, low extended defect density InAs quantum wells with A l1 -xG axSb barriers are reported. The electron-mobility-limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic subband. At low carrier density, the functional dependence of mobility on carrier density provided evidence of Coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750 000 c m2V-1s-1 was achieved at a sample temperature of 2 K.

  14. Investigation of temperature-dependent photoluminescence in multi-quantum wells.

    Science.gov (United States)

    Fang, Yutao; Wang, Lu; Sun, Qingling; Lu, Taiping; Deng, Zhen; Ma, Ziguang; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Chen, Hong

    2015-07-31

    Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photoluminescence(PL) intensity as the rising of temperature in low temperature range (T photoluminescence characters from the temperature dependence of integrated PL intensity unavailable. For resonant excitation, carriers are generated only in the wells and the temperature dependence of integrated PL intensity is very suitable to analysis the photoluminescence characters of quantum wells.

  15. Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating

    Science.gov (United States)

    Zia, O.; Bhattacharya, P. K.; Singh, J.; Brock, T.

    1994-08-01

    A novel optoelectronic filter voltage-tunable characteristics has been developed and implemented in a multiquantum well waveguide device. By virtue of the quantum-confined Stark effect, the refractive index in quantum wells at the periphery of a guiding region can be given a periodicity in the guiding direction by application of a bias on an electron-beam patterned Schottky grating atop the guide. If the period of the Schottky grating and associated index profile satisfies the Bragg condition, as in a resonant distributed feedback structure, band-reject filtering results. Aftering the bias on the Schottky grating changes the refractive index in the wells, thereby providing tunability of the wavelength at which Bragg diffraction occurs.

  16. Modeling of novel lateral AlGaAs/GaAs quantum well solar cell

    CERN Document Server

    Rashidi, M

    2016-01-01

    In this paper, a novel lateral quantum well solar cell has been introduced, and the structural parameters effects of these nano-structures on the performance of the device have been investigated. For modeling, the continuity equation has been solved in the quasi neutral regions. However, to analyze the quantum wells' effects, first the Schrodinger and Poisson equations have been solved self-consistently. To find the absorption coefficient derived from the Fermi's golden rule, the obtained Eigen states and energies and also the effects of multilayers using Transfer Matrix Method have been employed. Then, to find the solar cell performance parameters, all radiative and non-radiative recombinations have been accounted. It is found that modifying different geometrical parameters, including the thickness of the system, the widths of the wells and barriers, and also some structural parameters such as the barriers' mole fraction could noticeably influence the characteristics of the device. So, optimizing these param...

  17. Coherent Interband and Intersubband Dynamics in Terahertz-Driven GaAs Quantum Wells

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    We theoretically investigate the optical absorption spectra and charge density by subjecting a GaAs quantum well to both an intense terahertz (THz)-frequency driving field and an optical pulse within the theory of density matrix. In presence of a strong THz field, the optical transitions in quantum well subbands are altered by the THz field. The alteration has a direct impact on the optical absorption and the charge density. The excitonic peak splitting and THz optical sideband in the absorption spectra show up when changing the THz field intensity and/or frequency. The Autler-Towns splitting is a result from the THz nonlinear dynamics of confined excitons. On the other hand, the carrier charge density is created as wave packets formed by coherent superposition of several eigenstates. The charge density exhibitsquantum beats for short pulses and/or wider wells and is modulated by the THz field.

  18. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    Energy Technology Data Exchange (ETDEWEB)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  19. Emission-wavelength tuning of InAs quantum dots grown on nitrogen-δ-doped GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kaizu, Toshiyuki, E-mail: kaizu@crystal.kobe-u.ac.jp [Center for Supports to Research and Education Activities, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan); Taguchi, Kohei; Kita, Takashi [Department of Electrical and Electronic Engineering, Faculty of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

    2016-05-21

    We studied the structural and photoluminescence (PL) characteristics of InAs quantum dots (QDs) grown on nitrogen (N) δ-doped GaAs(001). The emission wavelength for low-density N-δ doping exhibited a blueshift with respect to that for undoped GaAs and was redshifted with increasing N-sheet density. This behavior corresponded to the variation in the In composition of the QDs. N-δ doping has two opposite and competing effects on the incorporation of Ga atoms from the underlying layer into the QDs during the QD growth. One is the enhancement of Ga incorporation induced by the lattice strain, which is due to the smaller radius of N atoms. The other is an effect blocking for Ga incorporation, which is due to the large bonding energy of Ga-N or In-N. At a low N-sheet density, the lattice-strain effect was dominant, while the blocking effect became larger with increasing N-sheet density. Therefore, the incorporation of Ga from the underlying layer depended on the N-sheet density. Since the In-Ga intermixing between the QDs and the GaAs cap layer during capping also depended on the size of the as-grown QDs, which was affected by the N-sheet density, the superposition of these three factors determined the composition of the QDs. In addition, the piezoelectric effect, which was induced with increased accumulation of lattice strain and the associated high In composition, also affected the PL properties of the QDs. As a result, tuning of the emission wavelength from 1.12 to 1.26 μm was achieved at room temperature.

  20. Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Wei, E-mail: wyi@hrl.com, E-mail: MSokolich@hrl.com; Kiselev, Andrey A.; Thorp, Jacob; Noah, Ramsey; Nguyen, Binh-Minh; Bui, Steven; Rajavel, Rajesh D.; Hussain, Tahir; Gyure, Mark F.; Sokolich, Marko, E-mail: wyi@hrl.com, E-mail: MSokolich@hrl.com [HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States); Kratz, Philip [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Qian, Qi; Manfra, Michael J. [Department of Physics and Astronomy, Purdue University, 525 Northwestern Ave., West Lafayette, Indiana 47907 (United States); Pribiag, Vlad S.; Kouwenhoven, Leo P. [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)

    2015-04-06

    Gate-tunable high-mobility InSb/In{sub 1−x}Al{sub x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm{sup 2}/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO{sub 2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K.